data/text/DLP3/898446

BQ28Z610: Unable to write to Data Flash memory using Advanced Communication tab.

Part Number: BQ28Z610 Attempting to write to the Data Flash section of the device. I am successfully able to write to a Data Flash location to modify a parameter using the Data Memory tab of BQ Studio but am unable to perform this write executing the identical bus sequence with the Advanced Communication tab (nor in code as well). I have verified the bus sequences are identical using an I2C protocol analyzer yet when I write with the Advanced Com tab in BQ Studio the flash write does not persist when I read back the value (old value remains). Other than timing perhaps, what would be the difference between using the Data Memory tab vs the Advanced Com tab to perform the Data Flash write even though the bus sequences are identical?

Take a look a the following thread. <secret URL>/support/power-management/f/196/t/738029 Andy

Thank you Andy for your prompt reply. This thread solved my issues. It was related to checksum and length. I will flag as resolved. One other question: Is it true that in order to simply read the data flash the device must have unsealed access? It seems this is true. I find this very, very unfortunate as just to check if a feature is enabled/disabled the risk of unsealing the device is required. Is there any work-around for this?

No. In SEALED mode, standard register information is accessible. Extended MAC Commands functions and data flash are NOT accessible.

This is most unfortunate that there is not a method to simply check if a feature is enabled/disabled without unsealing. I feel at a MINIMUM the Manufacturer Info Block data should be readable while unsealed so you could at least flag if you have previously enabled/disabled a setting. Thank you.