Talk:Gallium nitride

message: I'm not sure who originally wrote that high quality epitaxial GaN is "impossible to grow", but I changed it to "difficult".  Mainly I did this because I know for a fact that it is possible, since I have read about 10 journal articles describing how to do it, and I watched someone do it in a lab last week, but I think maybe I should have just deleted the entire paragraph.  It's outdated at best.  Any objections?  Jermor 17:11, 3 July 2007 (UTC)
replies: text: If you know it is possible, and you have the references at hand, then why delete it.  Maybe rewrite it into a section about 'growing high quality epitaxial GaN'?  --Dirk Beetstra T C 17:18, 3 July 2007 (UTC)
replies: text: I appreciate the explanation and the comparison to Si and GaAs.  GaN can also be grown by MOCVD and MBE, and despite the lack of a convenient substrate, buffer layers and other techniques are making the process a lot better.  By the way, someone has made significant improvements to this article, and it looks a lot better now. Jermor (talk) 01:03, 5 December 2007 (UTC)
thread_title: Developments

message: Are these crystals what make blue diode lasers so expensive?  Where does the high cost come from? -- Beland (talk) 22:10, 27 July 2008 (UTC)
replies: text: The growth of the crystals itself is fairly expensive, as are the sapphire substrates traditionally used 80.194.76.179 (talk) 07:10, 23 August 2011 (UTC)
thread_title:  Cost 

message: I suspect the author of the intro section meant to say "its susceptibility to ionising radiation damage is low", rather than "sensitivity", since the latter could be interpreted as a statement about its photo-sensitivity (stated as current per unit particle energy), when used as a photo-diode/detector.  
Suggest a rewording along these lines.
Matt Whyndham (talk) 10:16, 3 February 2009 (UTC)
thread_title:  Sensitivity to radiation 

message: I ended up on this page after googling GAN. I know I need to add some sort of disambig pointer at the top of the page, but which template do I use? Maury Markowitz (talk) 12:25, 3 June 2014 (UTC)
thread_title:  Need a link to disambiguation 

message: This article could be expanded. It seems to have a reduced amount of information. It would be nice to have a section with electrical, chemical and optical properties, especially for semiconductors and a possible comparison to SiC technology which is popular at this point in time.
ICE77 (talk) 06:12, 24 June 2015 (UTC)
thread_title:  Comments and suggestions 

message: Article says " The large band gap means that the performance of GaN transistors is maintained up to higher temperatures than silicon transistors" but up to what temperatures ? - Rod57 (talk) 02:45, 21 December 2015 (UTC)
replies: text: As of now, 19 June 2018, I see a reference to GaN working at ~400 °C (note 23). ICE77 (talk) 23:48, 19 June 2018 (UTC)
thread_title:  GaN and temperature - ~400 °C 

message: I suggest the article introduction should be updated to mention the increasingly widespread use of 650V GaN power devices in consumer electronics.  Probably only needs a single sentence?  [Dell, Apple, Harman, Samsung, Lenovo all now use GaN in AC power adapters] 75.135.150.19 (talk) 21:54, 5 July 2023 (UTC)
thread_title:  Commercial Use of GaN power devices 

message: The paragraph:
"Unlike silicon transistors which switch off due to power surges, GaN transistors are typically depletion mode devices (i.e. on / resistive when the gate-source voltage is zero). Several methods have been proposed to reach normally-off (or E-mode) operation, which is necessary for use in power electronics:   ...   "
...should be updated to reflect the fact that normally-off GaN power transistors have been in production for several years now from a number of semiconductor manufacturers. 75.135.150.19 (talk) 21:58, 5 July 2023 (UTC)
thread_title:  Enhancement-mode devices