Talk:Charge trap flash

message: I came to this article looking for pros and cons of this charge trap flash vs the floating conductor gate flash. In all places, only advantages are mentioned. If that's in fact the case then why isn't it 100% of the market? This leads me to believe there is some bias in the writing.  — Preceding unsigned comment added by 2620:0:1008:1201:F09E:C84D:9AF6:6E99 (talk) 21:26, 15 July 2016 (UTC)
thread_title:  Seems biased 

message: I have removed a large amount of text from the page, which, per my suspicion on IRC, was infact copyvio from this site. I have listed it as a reference, and it is hopefully possible to write the article using only GFDL text Michael Billington (talk • contribs) 08:52, 15 September 2006 (UTC)
thread_title:  Text removed 

message: Charge trap flash was not invented in 2006 by Samsung.  
A company called Saifun patented numerous elements of charge trap flash before 2006.  This technology is best commercialized by a company called Spansion, which was spun out of AMD.  Spansion makes NOR flash memory but it's flavor of NOR uses MirrorBit technology (which uses charge trapping licensed from Saifun) instead of floating gate.  (It does also make some floating gate, which was how it started off initially).  
Spansion announced that it will buy Saifun in Oct. 2007  —Preceding unsigned comment added by 131.239.52.20 (talk) 19:34, 25 October 2007 (UTC)
thread_title:  Article is incorrect. 

message: Is there any reason this can't be folded into the SONOS article? IE, is this not simply a trade name for Samsung's particular implementation of SONOS?  Maury 15:49, 30 October 2007 (UTC)
thread_title:  Is this just SONOS 

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