Talk:Phase-change memory

message: looks like advertisement;), mostly I found in literature PRAM(phase change memory)
: Agreed, moving to "phase-change memory" Maury 20:25, 20 October 2005 (UTC)
thread_title: title

message: Does anyone know why PRAM doesn't need a transistor for a switching element, and can use a diode instead? This is interesting, and seems to deserve a real explaination in the article. Maury 22:02, 18 September 2006 (UTC)
thread_title:  Diodes? 

message: I think reverse bias is needed to ensure not every cell on an accessed line is inadvertently selected for reading or writing. Only the cell to be accessed should be forward biased. Also the high voltage needed to exceed the diode threshold voltage for the high-resistance state suggests that a high operating voltage is needed for PRAM. 219.70.70.32 02:31, 1 July 2007 (UTC)
thread_title: Reverse bias, high voltage needed for diode selection PRAM

message: As originally described earlier, it utilizes only the amorphous state. Hence it is not a phase-change memory. It should go into another more appropriate article (maybe RRAM?).219.70.70.32 02:39, 1 July 2007 (UTC)
thread_title: Macronix chalcogenide RAM

message: There are several devices listed as having capacities in Mb. This is traditionally megabit (from Mbit in networking parlance), and it's also traditional to list capacities of memory chips in megabits. However, these devices are compared directly to others with capacities listed in GB for example. Which unit is intended? I'm assuming MB is correct; this should be changed in the article.--Ktims 07:10, 18 April 2007 (UTC)
thread_title:  Capacity units 

message: Should be removed, as they are in their current form mostly bullshit. Neither will flash rewritability kill your ipod (maybe in 5000 years...), nor does it make flash unsuitable for hardisk applications (see the tons of flash SSDs now starting to push into the marketplace. 134.105.82.206 12:56, 21 May 2007 (UTC)
thread_title:  Comments about Flash lifetime 

message: Should add a section on this, comparing advantages/disadvantages, read/write timings, and so on. Fhaigia 10:15, 30 June 2007 (UTC)
thread_title:  Phase-Change Memory vs Volatile Memories like DRAM 

message: *Oppose, they seem to be way too different. The only thing they appear to have is that they both are competing fast non volatile memory. --soum talk 13:17, 9 July 2007 (UTC)
thread_title:  Merge of RRAM into this article 

message: The timeline says Stanford Ovshinsky filed the first patent on phase change technology.  First, does anyone know if this application was granted as a patent and what number it is?  Second, it says patent 3,448,302 was licensed to him claiming first reliable operation of phase change memory.  Patent 3,448,302 was filed in June of 1966, 3 months before Stanford Ovshinsky's supposed first patent filing.  Does anyone have more information on this? Carl 612 16:37, 16 August 2007 (UTC)
thread_title:  Edit timeline? 

message: The phase change memory cell drawing looks very wrong. The bit line should be perpendicular to the word lines. That is not shown in the picture.218.168.141.188 14:38, 4 September 2007 (UTC)
thread_title: Wrong Drawing

message: Maybe it's just me, but I don't follow this problem. Surely the manufacturer could just solder a socket in place and insert the chip after soldering - or not??  TinyMark 17:44, 17 September 2007 (UTC)
thread_title: Programming/Soldering

message: It just occured to me, that CD-RW, DVD-RW, DVD+RW, DVD-RAM, BD-RE, HD DVD-RW media use phase change between crystalline and amorphous form to store data too. Just like PRAM. Except they read it with electromagnetic field (laser), not with electrical current like PRAM, which is a minor difference really. Are those "phase change memories" too? Why not? Is it the "random access" part? Could someone comment on this? I have no reliable sources on PRAM, so I'm not altering the article itself. --Kubanczyk 21:44, 10 October 2007 (UTC)
thread_title:  RW optical disc - is it a phase change memory? 

message: @76.104.212.98: I just noticed the external link to HP probe storage, and the comment added about the HP Micromover technology, which I presume is the trade name for the technology discussed on the HP probe storage web page. What does this have to do with PRAM? As far as I can tell, the two are completely unrelated and -- for how PRAM is currently being developed -- incompatible. Can you please illuminate for me why that link and comment belong in this article? Fhaigia (talk) 04:37, 16 August 2008 (UTC)
thread_title:  HP Micromover? 

message: The article states it take Flash 10,000 times as long to write a block as it does for SRAM to write a byte.  Nintendo Gamecube memory cards have a 512 KB block and block size has probably increased with increasing storage size.  In 1 ms flash would do at least 5 MB while SRAM would only 1 KB.  Why isn't flash the fastest memory available?  — Preceding unsigned comment added by Sdmitch16 (talk • contribs) 17:49, 12 April 2011 (UTC)
thread_title:  Flash vs SRAM 

message: The links to BAE C-RAM information at the bottom are broken. Does anybody want to track down correct links on the BAE website?
--Adamroyce (talk) 09:03, 18 May 2011 (UTC)
thread_title:  BAE C-RAM links broken 

message: "Phase-change memory (also known as PCME, PRAM, PCRAM, Ovonic Unified Memory, Chalcogenide RAM and C-RAM) is a type of non-volatile computer memory based on the memristor first developed by Hewlett Packard in 2008 [1]." The phrase in italics looks as if it has been put in as an HP plug, and could be interpreted to imply that PCM was a derivative of the HP research on memristors in 2008. The phrase should be removed. The theoretical framework linking different memory types can be included as a link or in a separate section.  — Preceding unsigned comment added by David Floyer (talk • contribs) 05:36, 6 February 2012 (UTC)
thread_title:  Memristor 

message: in the article there are no mention about:
# the read process is destructive (like FRAM and DRAM) or not (like MRAM)
# need to refresh like DRAM
# quantitative power consumption over DRAM
# quantitative access speed in ns
Those are all very important parameters to compare agaist other volatile and non volative technologies.
Article about FRAM and MRAM report those values:
https://en.wikipedia.org/wiki/Ferroelectric_RAM
https://en.wikipedia.org/wiki/Magnetoresistive_random-access_memory
--Efa (talk) 08:38, 9 December 2014 (UTC)
thread_title:  comparison parameters 

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thread_title:  External links modified