Complex sentence: In contrast to a modulation-doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate, since the charge carriers are "induced" to the 2DEG plane rather than created by dopants.
Split into simpler sentences: In contrast to a modulation-doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate. Since the charge carriers are "induced" to the 2DEG plane rather than created by dopants.