baber/WOPTO huggingface dataset:
Patent JP-H0766436-A (JP)
Title: Organic photovoltaic element
Inventor: IKUNO HIROSHI
IPC: H01L25/04
Filed: 1993-08-24
Abstract: PURPOSE:To prevent the peeling of a protective layer formed on an organic photovoltaic element, in the case of long term application, and realize long life. CONSTITUTION:The title organic photovoltaic element has a structure wherein an electron accepting organic material layer and an electron donating organic material layer which form a rectification junction are laminated between two electrodes at least one of which is transparent. A protective film whose main component is carbon is formed on the surface of the element. The film contains hydrogen, oxygen and nitrogen wherein the atomic weight ratio of nitrogen and carbon (N/C ratio) is lower than or equal to 0.005.
Patent JP-H0765570-A (JP)
Title: Bloch line memory
Inventor: SUZUKI TORU
IPC: G11C11/14
Filed: 1993-08-24
Abstract: PURPOSE:To hold stripe magnetic domains other than a main stripe domain such as a guide stripe domain and a fence stripe domain which are not to be extended at required positions stably while their extensions are avoided. CONSTITUTION:A stripe magnetic domain fixing means which is composed of high coercive force vertical magnetizing film patterns 15M and 15S by which a main stripe magnetic domain 1 and other stripe magnetic domains 2 and 3 are fixed respectively is provided on a magnetic thin film 12. The magnetic domain fixing force of the magnetic domain fixing means for the main stripe magnetic domain 1 is so selected as to be larger than the magnetic domain fixing forces of the magnetic domain fixing means for the other stripe magnetic domains 2 and 3. The main stripe magnetic domain which has to be extended and contracted can be stably fixed and extended and contracted.
Patent JP-2000045130-A (JP)
Title: Production of silicon carbide fiber
Inventor: OKAMURA KIYOTO
IPC: C01B31/36
Filed: 1998-07-24
Abstract: PROBLEM TO BE SOLVED: To provide a more economical production process for a silicon carbide fiber having excellent physical properties, for example, high strength. SOLUTION: A composition that is composed of a silicon-containing polymer that bears silylene group (-SiH2-) as a recurring structural unit or a composition consisting of the above composition and a polycarbosilane that is prepared by thermally modifying permethyl-polysilane is spun into fibers. Then, the resultant fibers are infusibilized in the presence of oxygen and/or under irradiation with radioactive rays or electron beams at 0-300 deg.C, further the infusibilized fibers are heated at 800-2,000 deg.C in vacuum or in an inert gas to produce the objective silicon carbide fibers.
Patent JP-S6269761-A (JP)
Title: Automatic re-build-up device for electronic switching system
Inventor: MURAMATSU KENICHI
IPC: H04M3/22
Filed: 1985-09-21
Abstract: PURPOSE:To execute the automatic re-build-up without using the labor by providing the initial power receiving restarting control circuit, after the feeding voltage value exceeds the prescribed threshold once, when the value returns to the prescribed value or above, closing the switch of respective function circuits. CONSTITUTION:By the occurrence of the power failure, the supply of the commercial electric power source to an initial power receiving terminal 23 of a feeding device 20 is stopped, the feeding by a battery 22 is started, and accompanying the progress of the discharging, the feeding voltage is gradually reduced. When the prescribed threshold necessary to the normal action of respective function circuits is exceeded, the initial power receiving from the device 20 is stopped. Thereafter, accompanying the releasing of the commercial electric power source, the feeding is restarted, and then, the charging of the battery 22 is proceeded by the direct current output from a rectifying circuit 21, the feeding voltage is gradually advanced and the prescribed threshold is returned. Thus, A voltage returning detecting circuit 31 in an initial power receiving restarting control circuit 30 detects the return of the feeding voltage accompanying the feeding restarting, and an initial power receiving starting command sending circuit 32 is started. By closing the switch of respective function circuits, the automatic re-build-up can be executed without using the labor.
Patent JP-H0258655-A (JP)
Title: Execution of curtain wall
Inventor: TAKIGAWA MASAMI
IPC: E04B2/88
Filed: 1988-08-24
Abstract: PURPOSE:To prevent the generation of crack and dew condensation on a floor concrete and prevent the erosion of a fastener by previously covering the fastener for installing a curtain wall, with a buffer member before the laying of floor concrete. CONSTITUTION:A curtain wall 1 is installed onto a body 3 through a fastener 2 fixed on the back surface of the curtain wall 1, and a floor surface 91 is formed by laying the floor concrete 9 onto the floor plate of the body 3, and the fastener 2 is embedded into the floor concrete 9. Before the floor concrete 9 is laid, the fastener 2 is covered by a buffer member 8 so that the floor concrete 9 and the fastener 2 do not contact. The buffer member 8 possesses elasticity, water impermeability, and heat insulation performance, and is formed from foamed material, rubber, etc., so as to cover all the fastener 2 and bolts and nuts. Therefore, the generation of crack on the floor concrete 9 due to the vibration of the fastener 2 is prevented, and the rusts and erosion of the fastener 2 are suppressed, and the generation of dew condensation on the floor concrete 9 can be prevented.
Patent JP-H0945894-A (JP)
Title: Manufacture of field-effect transistor
Inventor: MATSUNAGA TAKAHARU
IPC: H01L29/778
Filed: 1995-07-27
Abstract: PROBLEM TO BE SOLVED: To set a double-recess structure uniform in shape so as to make a field-effect transistor uniform in breakdown voltage. SOLUTION: An I-GaAs buffer layer 2, an InGaAs electron transit layer 3, an N-AlGaAs electron feed layer 4, an N-InGaP spacer layer 5, and an N<+> - GaAs contact layer 6 are grown on a semi-insulating GaAs substrate 1, and then a source electrode 7 and a drain electrode 8 are formed [(a)]. A photoresist film 9a provided with an opening of a second recess pattern is formed, an N<+> -GaAs contact layer 6 is selectively etched using the photoresist film 9a as a mask, and then the N-InGaP spacer layer 5 is selectively etched for forming a first recess [(b)]. Then, N<+> -GaAs contact layer 6 is selectively etched to form a first recess [(c)]. Thereafter, a gate electrode 10 is formed through deposition and lift-off of Al [(d)].
Patent JP-S6366831-A (JP)
Title: In-line type electron gun electrode structure
Inventor: NAIKI KAZUAKI
IPC: H01J29/82
Filed: 1986-09-05
Abstract: PURPOSE:To maintain high assembling accuracy by making the electrode burial width of insulating support bars about twice as wide as the distance between electron guns and providing a recessed groove at the center in the longitudinal direction of one wide face side. CONSTITUTION:The electrode burial width (l) of two insulating support bars 36 supporting and fixing cathode structures 10A-10C and G1-G4 electrodes 11-14 of an in-line type electron gun structure 3 is made wider than the distance S between electron guns so as to satisfy the relationship (l)>2S. Therefore, the distance (l)1 between two pairs of electrode support pieces 13B integrally formed with the collar- shaped edge 13A of an enclosed cylinder G3 electrode 13 can be also widened to nearly 2S, the support of the electrode structure to the insulating support bars 36 is made firm, and the support at both outside opening sections is also stabilized. On the other hand, a recessed groove 36D is formed along the longitudinal direction at the center of the opposite face to the wide face buried with the electrode support pieces of the insulating support bars 36. Thereby, the cross section area of the insulating support bars 36 is made smaller than that when the recessed groove 36D is not provided, and its heat capacity is decreased. Accordingly, high assembling accuracy can be maintained.
Patent JP-2000024681-A (JP)
Title: Treatment of organic waste water
Inventor: SAKUMA HIROSHI
IPC: C02F1/78
Filed: 1998-07-10
Abstract: PROBLEM TO BE SOLVED: To provide a biological treating method of org. waste water capable of suppressing foaming at ozone treatment and capable of executing the ozone treatment of returned sludge without deteriorating the ozone treatment effi ciency. SOLUTION: In this treating method of org. waste water in which the org. waste water 11 is subjected to activated sludge treatment in a biologically treating tank 1, the biological sludge 12 flowing out is subjected to solid-liq. separation in a precipitation tank 3 and the separated sludge 14 is returned to the biologically treating tank 1 as the return sludge 15, the biologically treating tank is divided into more than two, an ozone-containing gas 21 is injected into the upstream side of the treating part 1a, also the org. waste water flowing into the biologically treating tank 1 and the return sludge are divided into at least two, one of the divided org. waste water 11a and return sludge 15a is introduced to an ozone injecting part 1a at the upstream side of the biologically treating tank and the remainder is introduced to a treating part 1b on the downstream side, respectively.  In the ozone injecting tank 1a, the amount of influent org. sewage and the amount of the influent return sludge are regulated preferably so that the sludge concn. may be 1,000-15,000 mg/L.
Patent JP-H0952796-A (JP)
Title: Method for growing silicon carbide crystal and silicon carbide semiconductor device
Inventor: URUSHIYA TANIO
IPC: C30B33/12
Filed: 1995-08-18
Abstract: PROBLEM TO BE SOLVED: To form a smooth carbon surface on a substrate surface by etching an α-SiC crystal substrate with a hydrogen-contg. gas, then epitaxially growing SiC with glass contg. silicon and carbon at a higher temp. SOLUTION: The α-SiC substrate is etched by the gas contg. hydrogen (for example, a gaseous mixture composed of hydrogen and hydrogen chloride) at the first temp. in a first stage. The gas contg. the silicon and carbon (e.g.; a gaseous mixture composed of gaseous silane and gaseous propane) is supplied onto this SiC substratie at the second temp. higher than the first temp. to epitaxially grow the SiC on the substrate in a second stage. The epitaxially grown SiC substrate is cooled to form the smooth carbon surface having good quality on the surface of the SiC substrate in a third stage. The substrate is preferably etched with the gas contg. the hydrogen at a third temp. lower than the first temp. to remove the spherical matter generated in the first stage between the first stage and the second stage.
Patent JP-2001034589-A (JP)
Title: Data transfer method
Inventor: TAKAHASHI HIDEYUKI
IPC: G06F13/38
Filed: 1999-07-26
Abstract: PROBLEM TO BE SOLVED: To easily switch a plurality of characteristic transfer speeds and to simplify a data transfer process and to make reducible the code size as to a data transfer method which dynamically varies the speed of transfer of a parent microcomputer which totally controls the whole system and child microcomputers which actualize various functions. SOLUTION: An external memory 4 is provided which stores data transfer processing programs for every characteristic transfer speed and the internal memory 22 of a child microcomputer is divided into a transfer process area 222 which is rewritten as the speed of data transfer is changed and a fixed process area 221 which is not affected by the speed variation, and a parent microcomputer 1 reads the data transfer processing program for a corresponding transfer speed out of an external memory at a vibration request from the child microcomputer and writes it to the transfer process area of the child microcomputer, and then performs data transfer processing with the parent microcomputer according to the processing program written to the transfer process area.
Patent JP-H0953765-A (JP)
Title: Flexible metal pipe
Inventor: FUJIYOSHI MINORU
IPC: B32B15/08
Filed: 1995-08-18
Abstract: PROBLEM TO BE SOLVED: To provide a flexible metal pipe taken nailing safety measure by surely detecting leakage caused by nailing miss at the time of leakage inspection. SOLUTION: In a flexible metal pipe 1 covered with a synthetic resin layer 3 on the outer surface of a metal corgate pipe 2, at least one of a penetrating hole 4 is arranged on a resin covered layer 3, and it is sealed by a selecting transmitted member 5 for allowing transmission of gas from an inside (to say concretely, space between the corgate pipe 2 and a synthetic resin layer 3) to an outside, but blocking transmission of solid (dust and the like) and liquid (water, fog, and the like) from an outside into an inside.
Patent JP-S6454543-A (JP)
Title: Information processor
Inventor: HOSOYA OSAMU
IPC: G11C29/00
Filed: 1987-08-25
Abstract: PURPOSE:To decrease the generation frequency of an error whenever the number of times of write and read-out is repeated, and also, to correct to a correct data even if an error is generated in a data, and to always execute a normal operation, by providing an address control means and a correcting means. CONSTITUTION:An address control means 6 is provided with an internal address storage means 2c, an internal address updating means 7 and a composite address determining means 8. The means 8 designates a composite address from an internal address stored in the means 7 and a normal address designated by a CPU 1a, and executes write and read-out of a word data to and from a storage area in a main storage means 2a. Subsequently, the means 6 updates the internal address related to the normal address in which an error has been generated, to other internal address, based on error signals E1-E4 obtained by an error detecting means 3. Also, a correcting means 4 corrects an error bit, in case when an error of 1 bit has been generated in a 1-word data. In such a way, while a read/write processing is repeated, the generation of an error decreases gradually, and also, even if the error is generated, a recovered correct word data is always read out.
Patent JP-S6272807-A (JP)
Inventor: ORITA KEIICHI
IPC: E01F9/553
Filed: 1985-09-24
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0494821-A (JP)
Title: Machine for working steel material
Inventor: NISHIDE MORIHISA
IPC: B30B15/02
Filed: 1990-08-09
Abstract: PURPOSE:To easily execute the working treatment of the steel material of large width without interfering to the other die by lying many dies in a row and waiting on the die mounting stand nearby the mounting table as the working position and carrying the die to the mounting table corresponding to the kind of the working. CONSTITUTION:The die mounting stand 9 is preliminarily removed to the position of original point. When the required one among the dies 2a-2h is designated with the operating table provided separately, the motor is driven, the ball-screw 18 is turned, the die mounting stand 9 is moved to the left hand or to the right hand, so the designated die 2a-2h is aligned with the position of the transferring machine 29. Next, the hydraulic cylinder 30 is driven, the joint piece 33 of the rear end of the case 32 is engaged with the joint piece 28 of the die base 22, and the die base 22 is pushed out. The case 32 is moved in sliding in the slide guide 31 to the mounting table 32. On the other hand, the die base 22 is moved on the supporting rail 36 while being controlled with the deviation of the lateral position with the guide roll 37, and set on the mounting table 39.
Patent JP-H0854682-A (JP)
Title: Projection type image display device
Inventor: YOSHIDA TORU
IPC: G03B21/10
Filed: 1994-08-12
Abstract: PURPOSE:To provide a projection type image display device with which additional reduction in its size and thickness is possible. CONSTITUTION:Curving of a circular columnar distributed index lens 11 with an adequate refractive index distribution is made possible by using the refractive index distributed index lens 11. The packaging space of the distributed index lens 11 is, therefore, made small by curving the distributed index lens 11 even if the distributed index lens 11 is longer than the length of a shift lens consisting of the conventional single lens. Then, the refractive index distributed index lens 11 is curved and arranged between a transmission type screen 3 and a liquid crystal display panel 1, thereby the size and thickness over the entire part of the device are made smaller than in the case of using the conventional shift lens.
Patent JP-H0870896-A (JP)
Title: New nucleic acid fragment and detection of corynebacterium sp. j1 strain using the fragment
Inventor: KURIYAMA AKIRA
IPC: C12N15/09
Filed: 1994-09-05
Abstract: PURPOSE: To provide a new nucleic acid fragment composed of the 16SrRNA gene of Corynebacterium sp.J1 strain having a specific base sequence, capable of metabolizing organic compounds and enabling the quick and easy detection of bacteria e.g. for the cleaning of environmental pollution in high detection accuracy and sensitivity. CONSTITUTION: This new nucleic acid fragment is composed of the 16SrRNA gene of Corynebacterium sp.J1 strain having the base sequence expressed by formula. Bacteria capable of metabolizing a wide variety of organic compounds, especially having excellent decomposition activity of various aromatic compounds and useful e.g. for the cleaning of the pollution with organic compounds in soil caused by environmental pollution can quickly and easily be detected in high specificity and sensitivity by using the nucleic acid fragment or a part of the gene as a primer or a probe. The nucleic acid fragment can be produced by extracting an rRNA from Corynebacterium sp.J1 strain and amplifying the base sequence by PCR method using a synthesized primer.
Patent JP-H1155034-A (JP)
Title: Voltage controlled oscillator
Inventor: YAGI SHINICHI
IPC: H03B5/04
Filed: 1997-08-06
Abstract: PROBLEM TO BE SOLVED: To accurately perform temperature compensation for an oscillation frequency and modulation sensitivity. SOLUTION: Temperature of a cathode potential at a variable capacity diode CR1 a Colpitts type voltage controlled oscillator (VCO) is compensated for by a temperature compensation circuit composed of a resistor and a thermistor RT1, so that the temperature stability of the oscillation frequency is improved. Besides, the temperature of a control voltage supplied to the anode of the variable capacity diode CR1 is compensated for by a temperature compensation circuit composed of a resistor and a thermistor RT2 so that the temperature stability in the modulation sensitivity of the VOC is improved.
Patent JP-H0375601-A (JP)
Title: Polarizer made of optical fiber
Inventor: ARIKAWA TORU
IPC: G02B6/024
Filed: 1989-08-16
Abstract: PURPOSE:To obtain the polarizer which is small in size, unable over the wavelength region of a wide range, easily producible and inexpensive by polishing and cutting off a pat of the clad contg. the stress imparting pat of a stress imparting type polarization maintaining optical fiber near to the core perpendicularly to the axis of polarization and coating the polished surface formed by this polishing with metal. CONSTITUTION:A part of the clad 23 contg. the stress imparting part 22 of the stress imparting type polarization maintaining optical fiber 11 is polished and cut off near to the core 21 perpendicularly to the axis of polarization and the polished surface 31 formed by this polishing is coated with the metal. The polarizer 10 made of the optical fiber is constituted of only the polished fiber 12, a glass block 13 and the metallic film 24 and is, therefore, small in size. The one of the two polarized waves (X polarized wave and Y polarized wave) propagating in the stress imparting type polarization maintaining optical fiber 11 is absorbed into the metallic film 24, by which the stress imparting type polarization maintaining optical fiber 11 itself is used as the polarizer and, therefore, the usable wavelength region thereof is wide. The polarizer which is small in size, usable over the wavelength region of the wide range, easily producible and inexpensive is obtd. in this way.
Patent JP-2000042563-A (JP)
Title: Ozone reaction tank
Inventor: TAKAHASHI MASAOKI
IPC: C02F1/50
Filed: 1998-07-27
Abstract: PROBLEM TO BE SOLVED: To provide an ozone reaction tank capable of efficiently performing sterilization of treating water and treatment of unreacted ozone. SOLUTION: A portion near the lower end of an elevating/lowering covering cap 18 for covering the upper part of a reaction tank main body 17 is immersed into a seal liquid 25 stored in a spacing between a seal liquid storage space forming member 24 and the reaction tank main body 17, and the unreacted ozone 7 discharged from ozone mixed treating water fed from a volute pump 19 to the reaction tank main body 17, is restrained to flow out to the outsides of the reactor main body 17 and the elevating/lowering covering cap 18, and the treating water 1 is sterilized in a high ozone concentration state. When internal pressure in a non-liquid storage space 27 becomes a specified value, a gas discharge valve 21 is opened based on signal 20s from a pressure detection means 20, and the elevating/lowering covering cap 18 descends, then the ozone 7 discharged from the non-liquid storage space 27 is introduced into an ozone removing means 10 and decomposed.
Patent JP-H0375130-A (JP)
Title: Hot press-molded body of thermoplastic synthetic resin non-crosslinked open-cell foam and preparation thereof
Inventor: USUI TAKASHI
IPC: B29C67/20
Filed: 1989-08-18
Abstract: PURPOSE:To prepare a molded body having large unvenness by one-step molding by a method wherein the temp. of a mold is held to at least the m.p. of a base material or higher and the molten layer at least of the bottom surface of the recessed part of a foam molten layer part generated by hot-pressing a foam is bonded to the mold and the formation of the recessed part and the peeling of the molten layer part are completed within a molding process of one cycle. CONSTITUTION:A mold 3 heated to the m.p. of the base material resin of a thermoplastic synthetic resin non-crosslinked open-cell foam 1 or higher is pressed to said foam 1. The temp. of the mold is set so as to be higher than the m.p. of the base material resin of the foam by 5 deg.C or higher but practically set to a range of (the m.p. of the base material resin) plus 20 - 100 deg.C or higher. The molten fluidized cell films of the foam form a molten layer part 2 and a thick foam molten layer part 2a is formed at a part where the mold 3 deeply penetrates and a thin foam molten layer part 2b is formed at a part where the mold 3 shallowly penetrates. A recessed part having a depth of 10mm or more is formed in the foam in a hot pressing advancing process but said depth is pref. set to about 100mm at most. When the mold is held to the m.p. of the base material resin of the foam or higher and released from the foam, the foam molten layer part 2 is bonded to the heated mold 3 to be removed from the surface of the foam.