baber/WOPTO huggingface dataset:
Patent TW-404035-B (TW)
Title: The damascene inner-wiring process which uses the organic polymer of low-dielectrics constant as the etch stop layer
Inventor: JANG SYUN-MING
IPC: H01L23/522
Filed: 1999-01-12
Granted: 2000-09-01
Abstract: The copper metal damascene inner-wiring technique is more and more important in today's multi-layer inner-wiring process; however, since the selectivity of etching is not good between the silicon nitride (SiON) layer used generally as the etch stop layer and the inter-layer dielectrics (IMD) with silicon oxide substance, it could not provide efficient protection, although it could improve this problem by increasing the thickness of the silicon nitride but it will cause the drawback of increasing the parasitic capacitor. Thus, this invention provides a betterment process which utilizes the organic polymer with low dielectrics constant such as poly(arylene ether) polymer as the etch stop layer of the defining damascene opening structure, which could not only elevate the etch selective ratio between it and the inter-layer dielectrics (IMD) but also maintain low dielectrics constant without increasing the parasite capacitance and lowering the RC performance of the devices.
Patent TW-419673-B (TW)
Title: Pole installed X-Y scanner
Inventor: GRIZZI ROBERT FRANCIS
IPC: G21C17/003
Filed: 1999-02-26
Granted: 2001-01-21
Abstract: Methods and apparatus for examining a nuclear reactor shroud(84) are described. In one embodiment the inspection apparatus (20) includes a scanner subassembly (22) movably coupled to a base subassembly (24). The base subassembly (24) includes a linear bearing (36) attached to a first end (26) of the base assembly (24) and positioned to extend from the top (30) to the bottom (32) of the base assembly (24). At least one jacking cylinder (48) is coupled to the second end (28) of the base assembly (24). The scanner subassembly (22) includes a mounting member (50) movably coupled to the linear bearing (36), a rotating member (52) pivotally coupled to the mounting member (50), an elongate radial bearing (54) coupled to the mounting member (50), and a carriage assembly (60) movably coupled to the radial bearing (54). The carriage assembly (60) includes a scanner arm (62), and the scanner arm (62) includes an inspection probe (68) coupled to each end (64,66) of the arm(62). The scanner arm (62) is configured to be parallel to the radial bearing (54).
Patent TW-409293-B (TW)
Title: Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits
Inventor: TALWAR SOMIT
IPC: H01L27/092
Filed: 1999-02-26
Granted: 2000-10-21
Abstract: A method for fabricating a plurality of shallow-junction metal oxide semiconductor field-effect transistors (MOSFETs) on a selected area of a silicon wafer, in the case in which the MOSFETs are spaced from one another by substantially transparent isolation elements. The method includes the step of flooding the entire selected area with laser radiation that is intended to effect the heating to a desired threshold temperature of only the selected depth of a surface layer of silicon that has been previously amorphized to this selected depth and then doped. This threshold temperature is sufficient to melt amorphized silicon but is insufficient to melt crystalline silicon. However, should the laser radiation be directly incident on both the substantially transparent isolation elements and the silicon surface, a variable portion of the energy of the incident radiation traveling through the substantially transparent isolation elements would be transferred to the silicon surfaces in contact with the isolation elements depending on the depth of the isolation elements thereby causing unpredictable additional heating of the silicon which would result in an unwanted shift in the fluence required to reach the melt threshold temperature in those silicon regions which reach the melt threshold temperature. To prevent this, a top layer stack of a dielectric and a highly radiation-absorbent material (e.g., silicon dioxide and tantalum nitride) is deposited over the selected area prior to the flooding of the entire selected area with laser radiation taking place. After, the melted silicon has cooled and recrystallized, the top layer of highly radiation-absorbent material is stripped.
Patent TW-427932-B (TW)
Title: Method and apparatus for designing sheet metal parts
Inventor: KASK KALEV
IPC: G06T19/00
Filed: 1999-03-03
Granted: 2001-04-01
Abstract: An apparatus is provided for resolving a collision between a first face and a second face of a sheet metal part represented by a 3-D model. The faces collide with one another when a 2-D model of a flat sheet metal part, designed on a CAD system, is folded into the 3-D model displayed on the CAD system. The apparatus comprises a detecting means, an analyzing means and an eliminating means. The detecting means is for detecting each collision between the faces which become adjacent in association with folding the 2-D model into the 3-D model. The eliminating means is for eliminating the collision by designing a 2-D model of a modified flat sheet metal part which can be folded without causing the collision.
Patent TW-397931-B (TW)
Title: The manufacturing method of half-tone phase-shifting mask from self-aligned opaque areas
Inventor: PERITT CLISTOFF
IPC: G03F1/08
Filed: 1999-04-16
Granted: 2000-07-11
Abstract: This is a half-toned phase-shifting mask from self-aligned opaque areas. Multiple opaque areas are obtained from an opaque material layer in the first photoresist layer. The second photoresist is coated onto the surface of mask base. Some opaque area is uncovered so the desired remains. Second exposure then proceeds, followed by a back-sided submerging exposure, which is used to cover only the second photoresist area on top of the opaque area which is not intend to remain finally. After the second photoresist layer is developed, the undesired second photoresist area on top of the opaque area which is not intend to remain is removed. Finally, the opaque material layer and the half-toned material area are etched to remove the undesired opaque area and the lower half-tone material area. The phase-shifting structure of the phase-shifting mask and some of the margin of the opaque area have already been already defined after the first exposure.
Patent TW-509980-B (TW)
Title: Dry etching apparatus for manufacturing semiconductor devices
Inventor: SHIN EUN-HEE
IPC: H01L21/3065
Filed: 1999-06-07
Granted: 2002-11-11
Abstract: A dielectric window located above a process chamber of a dry etching apparatus for manufacturing semiconductor devices is modified with various shapes responsive to the non-uniform plasma density inside the process chamber. For example, the lower surface of the dielectric window is curved inwards at the center of the surface with concave-shape such that the lower surface portion of the dielectric window facing a higher plasma density inside a process chamber is further spaced from the horizontal surface of the chuck than the lower surface portion facing a lower plasma density. The dielectric window can be dome-shaped with uniform thickness, or the lower surface of the dielectric window can be step-shaped, wherein the lower center surface of the dielectric window is further spaced from the horizontal surface of the chuck than the other surface portions.
Patent TW-442398-B (TW)
Title: Shuttle control method
Inventor: ABE AKIHIRO
IPC: B41J19/18
Filed: 1999-06-17
Granted: 2001-06-23
Abstract: The present invention has an object to prevent the collision between the shuttle and the damper and/or harmful influence caused by the collision in the dot line printer. The control method of the present invention measures the actual speed of the shuttle and changes the braking force to be applied to the shuttle, preventing the collision against the damper.
Patent TW-568929-B (TW)
Title: Open-celled rigid polyurethane foam and method for producing the same
Inventor: OHGA MICHIHIRO
IPC: C08J9/34
Filed: 1999-06-24
Granted: 2004-01-01
Abstract: In order to provide an open-celled rigid polyurethane foam, which realizes a low material cost per unit volume of the foam and excellent surface smoothness because of its unique structure, and a thermal insulation material comprising the foam, an open-celled rigid polyurethane foam which has an open cell content of not less than 99% in a state that a skin layer is left on the foam is produced by foam molding, preferably multiple-stage compression molding, of foaming components containing a polyol component and an isocyanate component with an equivalent ratio of NCO/OH of about 0.55-0.95, and a blowing agent, preferably water, and a thermal insulation material is produced from the foam preferably subjected to a baking treatment by means of far-infrared ray exposure. Further, in order to provide a vacuum insulation material that does not result waste upon production, and provide good appearance and high reliability when used for products such as freezing and refrigerating apparatuses by using the aforementioned open-celled rigid polyurethane foam, a vacuum insulation material is produced by covering the foam as a whole with a container composed of a gas barrier film, reducing internal pressure of the container, and sealing the container to provide the vacuum insulation material.
Patent TW-472030-B (TW)
Title: Method for regeneration of solder strippers
Inventor: YANG WEI-CHUN
IPC: C02F1/52
Filed: 1999-06-28
Granted: 2002-01-11
Abstract: The present invention relates to the regeneration of solder strippers. The method in accordance with the invention comprises sequential steps of neutralization, precipitation, filtering, heating, and dissolving to separate valuable components from solder strippers. According to the present method, recovery of sodium stannate of 90% purity, sodium fluoride (or sodium nitrate) of 80% purity, and copper sulfate of 95% purity can be achieved.
Patent TW-585847-B (TW)
Title: Mortar cement composition and method of improving the flexural bond strength of a mortar cement
Inventor: ANTTILA ARTHUR L
IPC: C04B28/04
Filed: 1999-09-03
Granted: 2004-05-01
Abstract: A mortar cement composition is composed of a cement or ground portland cement clinker, ground limestone and/or lime, sand, a sufficient amount of water to render the composition flowable, and at least one water-soluble polymer present in the amount having a lower limit of about 0.001 wt% and an upper limit of about 0.04 wt% based on total dry weight of the ingredients, with the proviso that the extent of adsorption of the polymer onto the cement is less than 50%, and wherein the resulting mortar has 8-16% air content and greater than 70 psi flexural bond strength. This mortar cement composition is for use in building structures in all seismic zones.
Patent TW-504802-B (TW)
Title: Method of fabricating cell of flash memory device
Inventor: YUN JAE-SUN
IPC: H01L21/8247
Filed: 1999-07-27
Granted: 2002-10-01
Abstract: An improved method of fabricating a flash memory cell is disclosed. A tunnel oxide film is formed on active regions. A first conductive film and a protective film are sequentially formed on the tunnel oxide film. The protective film on the isolation film is selectively etched, thus forming a protective film pattern on the tunnel oxide film. A sacrificial conductive film is formed on the resultant structure. The sacrificial conductive film and the first conductive film pattern are over-etched until the sidewalls and the upper surface of the protective film pattern are exposed, thereby exposing the center of the isolation film and simultaneously forming a first conductive film pattern having sloped sidewalls. With the present invention, an electrical field is prevented from being concentrated in an area between a control gate electrode and a floating gate because the floating gate have a sloped sidewall profile instead of sharp edges. Also, the recession of an isolation film between adjacent floating gates can be significantly avoided, consequently suppressing the deterioration of isolation between adjacent cells.
Patent TW-448581-B (TW)
Title: Fabrication of conductivity enhanced MOS-gated semiconductor devices
Inventor: KOCON CHRISTOPHER BOGUSLAW
IPC: H01L29/78
Filed: 1999-08-24
Granted: 2001-08-01
Abstract: In the manufacture of an MOS-gated semiconductor device, indentations are provided on a surface of a semiconductor wafer extending inwardly of respective spaced apart regions at the wafer surface having doping concentrations greater than that present in the remainder of the wafer. A layer of silicon having a doping concentration less than that of the substrate is conformally provided on the substrate surface whereby the indentations in the substrate surface are replicated on the surface of the silicon layer. Dopants in the substrate regions are then out-diffused into the silicon layer to provide highly doped buried regions within the layer. Then, using the silicon layer surface indentations as photomask alignment marks, gate electrode structures are formed on and within the silicon layer in preselected orientation relative to the buried regions. The buried regions provide low resistance paths for current through the resulting devices.
Patent TW-406212-B (TW)
Title: The projector inclination angle auto-detecting and the trapezoid correcting apparatus and the method thereof
Inventor: CHEN SHUEN-SHIUNG
IPC: G03B21/14
Filed: 1999-12-01
Granted: 2000-09-21
Abstract: This invention discloses a kind of inclination angle auto-detecting apparatus which will output different quantity of current according to the difference of the inclination angle to make the signal of trapezoid correction. Said apparatus comprises three major portions: a plumb counterweight, a plumb light projection and a position sensor. The working principle is as follows: the plumb counterweight and the plumb light projection are always kept in a vertical status relative to the horizon due to the gravity; the position sensor is fixed on the housing of the projector; when there is the inclination angle in the projective optical axis of the projector, the light spot projected on the position sensor will move and cause the output current of the position sensor change; utilize the difference of the amplitude of output current, then find out the angle of inclination after transforming the module/number, and from this angle of inclination to provide the signal for correcting trapezoid, judging the aspect ratio of the output.
Patent TW-449993-B (TW)
Title: Echo canceller
Inventor: CHEN TZUNG-KUEI
IPC: H04M1/00
Filed: 1999-12-17
Granted: 2001-08-11
Abstract: An echo canceller that is applied in between a receiving line and a transmission line, includes adjustment filter, echo adjustment arbitrator, divergence detector and double talk detector, in which, adjustment filter proceeds echo cancellation after adjusting a coefficient, echo adjustment arbitrator inputs an adjustment arbitration signal with voice input signal and voice output signal, divergence detector issues a divergence & convergence signal after receiving external input signal and adjustment arbitration signal, and double talk detector sends adjustment coefficient control signal to adjustment filter after receiving the external input signal, adjustment arbitration signal and divergence and convergence signal. The invention targets at adding a divergence detector that can make the echo canceller steady.
Patent TW-459227-B (TW)
Title: Magnetic random access memory with a reference memory array
Inventor: NAJI PETER K
IPC: G11C11/14
Filed: 2000-01-14
Granted: 2001-10-11
Abstract: An MRAM device (4) includes a memory array and a reference memory array (75). The memory array arranges magnetic memory cells (41, 42) in rows and columns for storing information, and the reference memory array forms reference memory cells (70, 71) for holding a reference information in a row line. The magnetic memory cell has a maximum resistance (R+ΔR) and a minimum resistance R according to magnetic states in the cell. Each reference memory cell has a magnetic memory cell (70, 71) and a transistor (72, 73), which are coupled in series and have a reference resistance across the reference memory cell and the transistor. The transistor is controlled by a reference row line control (74), so as for the reference resistance to show a mid-value between the maximum resistance and the minimum resistance of the magnetic memory cell. A bit line current (Ib) and a reference bit current (Ir) are provided to the magnetic memory cell and the reference memory cell, respectively. Magnetic states alternates the bit line current, which is compared to the reference bit current to provide an output.
Patent TW-432728-B (TW)
Title: A method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage
Inventor: NAKAMURA JUNICHI
IPC: H01L21/205
Filed: 2000-01-24
Granted: 2001-05-01
Abstract: A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section. When growing the current diffusion layer from a crystal interface on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor Δa/a is not lower than 0.25% with respect to the upper clad layer at a crystal interface where the crystal composition changes on the upper clad layer of the light-emitting section, the growth rate at least at the start time of growth is made to be 1.0 mu m/h or less.
Patent TW-494592-B (TW)
Title: Gel electrolyte and gel electrolyte battery
Inventor: SHIBUYA MASHIO
IPC: H01M50/409
Filed: 2000-02-10
Granted: 2002-07-11
Abstract: A gel electrolyte comprised of a non-aqueous electrolytic solution immersed in a matrix polymer, in which ion conductivity of a solvent is improved and superior cyclic characteristics are achieved. To this end, the gel electrolyte includes an electrolyte, a matrix polymer and a non-aqueous solvent. The non-aqueous solvent is a mixed solvent of ethylene carbonate (EC), propylene carbonate (PC) and γ-butyrolactone (GBL). The non-aqueous solvent is of a weight composition in an area in a triangular phase diagram (EC, PC, GBL) surrounded by a point (70, 30, 0), a point (55, 15, 30), a point (15, 55, 30) and a point (30, 70, 0). A gel electrolyte battery employing this electrolyte is also disclosed.
Patent TW-462158-B (TW)
Title: Method for confirming communication range
Inventor: NISHIMURA ATSUSHI
IPC: H04W92/18
Filed: 2000-03-15
Granted: 2001-11-01
Abstract: A method for confirming a communication range which can reduce an interference at the time of receiving a code when a plurality of radio stations are put on for a function to check the communication range at the same point of time. For a discrimination code, one tone frequency selected from CTCSS frequencies is used so that transmission of a confirmation signal is implemented at any optional random timing set up by an interval timer.
Patent TW-466790-B (TW)
Title: Rectangular battery
Inventor: INOUE MASAO
IPC: H01M50/103
Filed: 2000-03-24
Granted: 2001-12-01
Abstract: To provide a rectangular alkaline storage battery comprising an electrode plate which can be easily prepared and having a high packing density of active material and volumetric energy density. A connected negative electrode plate 20A consisting of hydrogen-absorbing alloy negative electrode plates 21, 22 was bent into a U-shaped form at the central portion (connecting portion) 23. A composite positive electrode plate 10A (10B, 10C) was then sandwiched by the hydrogen-absorbing alloy negative electrode plates 21, 22 with a separator 30 made of an unwoven polypropylene fabric provided interposed therebetween to prepare an electrode plate unit. Two such electrode plate units were then laminated to form a group of electrode plates.
Patent TW-543154-B (TW)
Title: Optimized reachthrough implant for simultaneously forming an MOS capacitor
Inventor: COOLBAUGH DOUGLAS D
IPC: H01L29/94
Filed: 2000-03-30
Granted: 2003-07-21
Abstract: A method of forming a diffusion region in a silicon substrate having low-resistance, acceptable defect density, reliability and process control comprising the steps of: (a) subjecting a silicon substrate to a first ion implantation step, said first ion implantation step being conducted under conditions such that a region of amorphized Si is formed in said silicon substrate; (b) subjecting said silicon substrate containing said region of amorphized Si to a second ion implantation step, said second ion implantation step being carried out by implanting a dopant ion into said silicon substrate under conditions such that the peak of implant of said dopant ion is within the region of amorphized Si; and (c) annealing said silicon substrate under conditions such that said region of amorphized Si is re-crystallized thereby forming a diffusion region in said silicon substrate is provided.
Patent TW-440479-B (TW)
Title: Method and apparatus for reducing the gas-purging time of invalid stroke of extruding machine
Inventor: YE SHR-JUNG
IPC: B21C31/00
Filed: 2000-05-06
Granted: 2001-06-16
Abstract: This invention relates a method and apparatus for reducing the gas-purging time of invalid stroke of an extruding machine, in which an alignment apparatus is provided at the tail portion of a cylinder of an ingot holding tube of the extruding machine. The method for extruding and gas-purging comprises the steps of: (a) operating the alignment apparatus and locking-up the ingot holding tube, for maintaining a gap, between the ingot holding tube and a mold, preventing extruding material from exiting but allowing gas to exit; (b) feeding materiel; (c) advancing a main cylinder, pushing the extruding materiel into the ingot holding tube; (d) roughing the material, and increasing the pressure of the main cylinder and the cylinder of the ingot holding tube, thereby naturally purging the gas from the gap between the ingot holding tube and the mold while advancing a pressing shaft; (e) increasing the pressure of the main cylinder and the ingot holding tube to the pressure for shaping and extruding, purging the alignment cylinder to decompress the mold; urging the ingot holding tube against the mold; (f) forming the material; thereby naturally purging the gas inside a cavity of the ingot holding tube, and greatly reducing the invalid stroke time of the extruding machine, by means of the above procedures, so as to increase the extruding efficiency and productivity.
Patent TW-I243649-B (TW)
Title: Fermented and concentrated beverage derived from microorganism having disinfection/infection protection action on vancomycin-resistant enterococcus
Inventor: FUJIMURA HISASHI
IPC: A23L33/10
Filed: 2000-06-28
Granted: 2005-11-21
Abstract: To obtain a concentrated solution of filtrate of a cultured solution prepared by cocultivation of a specific combination of plural kinds of useful microorganisms selected from Bacillus, yeast and lactic acid bacteria. Since the culture product of the microorganism thus obtained has disinfection/infection protection action at least on vancomycin-resistant Enterococcus and inhibits the growth of the Enterococcus, an infectious disease with the bacterium can be improved or prevented by drinking the concentrated solution.