baber/WOPTO huggingface dataset:
Patent JP-H06349547-A (JP)
Title: Connector for slide type ic card
Inventor: MIZUSAWA YOSHINORI
IPC: G06K17/00
Filed: 1993-06-11
Abstract: PURPOSE:To put a connector in such a simple, small-sized, and high-density structure as can be operated easily by hands. CONSTITUTION:A base 1 and a frame 4 are coupled with each other by two toggles 10, and both toggles are in bent condition, and the coupling 11 of each toggle is positioned inside an eject button 13, and they are coupled with each other by a link pin 12. A drive spring 14 is incorporated between the base and the eject button, and the eject button presses the coupling of the toggle. Each frame is provided with a flexible detection key 5 of cantilever type having two projections at the inner face, and a switch with a hole is incorporated inside both frames, and it is pressed with a back spring 9. When an IC card is not inserted yet, one projection of each detection key abuts on the topside and underside of the switch, whereby it is locked at the incline 3 of the opening of the base. When an IC card in inserted, the switch is pressed, and one side projection gets in the hole, and the frame shifts right, and a pin contact 15 makes contact with it.
Patent JP-H01311916-A (JP)
Title: Exhaust system of low deck small vehicle
Inventor: NAGASAKA HAJIME
IPC: B60K13/04
Filed: 1988-06-09
Abstract: PURPOSE:To lower the floor of a vehicle and prevent corrosion of an exhaust passage by providing an elongated under tube from a front standing wall nearly to the rear end of the floor of the vehicle body frame and conducting the engine exhaust backward through a muffler and the under tube, in a low deck small vehicle for a wheelchair. CONSTITUTION:A vehicle body frame 10 comprises under tubes 12a, 12b, an outer rim tube 14, upper tubes 16a, 16b, an inside tube 18, and cross members. And the exhaust pipe 42 of an engine 32 is connected to an exhaust muffler 44 passing through the forward side of front wheels. The other end of the exhaust muffler 44 is connected to the front end of the right side under tube 12b, and engine exhaust is discharged backward through the under tube 12b. By such constitution, the floor can be lowered and corrosion of the exhaust passage also can be prevented.
Patent JP-H0310768-A (JP)
Title: Numerically controlled grinding machine
Inventor: MINAMITANI TOSHIYUKI
IPC: B24B51/00
Filed: 1989-06-02
Abstract: PURPOSE:To perform multidress according to a simple processing program by providing a control means which the machining allowance of a work specified at one full grinding cycle is divided by an allowable machining allowance and executes one full dress cycle and one full grinding cycle with each division machining allowance. CONSTITUTION:One full dress cycle, a grinding cycle, and a machining allowance capable of being ground at one full dress are stored in each of memory parts 6, 9, and 10. The machining allowance of a work specified at one full grinding cycle is divided by an allowable machining allowance stored in a control means 8, and the stored one full dress cycle and one full grinding cycle stored at each division machining allowance are executed.
Patent JP-H06181475-A (JP)
Title: Orthogonal demodulation circuit
Inventor: KAWASAKI TOSHIO
IPC: H03M1/08
Filed: 1992-06-01
Abstract: PURPOSE:To simplify the circuit configuration of an anti-aliasing filter and to prevent deterioration in a code error ratio when a frequency difference is large by setting a sampling frequency of a digital signal to be high. CONSTITUTION:Analog low pass filters 15,16 and digital low pass filters 19,20 are used to eliminate a high frequency component being a half of a frequency fs or over equal to that of a conventional circuit and the frequency characteristic of the analog low pass filters 15,16 is enough to have a gentle slope in comparison with that of conventional filters. Thus, the circuit of the analog low pass filters 15,16 is simplified because of less number of filter stages. Speed conversion circuits 21,22 are made up of, e.g., two D flip-flop circuits, interleave a digital signal whose sampling frequency is 2fs to a data input terminal and the clock frequency is subject to speed conversion to the frequency fs and it is extracted. Then a phase rotation circuit 25 cancels the phase rotation of the input digital signals and a code error ratio is not deteriorated even when a frequency difference between the input digital modulation signal and a demodulation use carrier is high.
Patent JP-S5665753-A (JP)
Title: Loop amount measuring device
Inventor: UEKI KATSUYA
IPC: B65H23/18
Filed: 1979-10-30
Abstract: PURPOSE: In a loop amount calculator used in a carry line such as path board line, to perform the decision of correction amount accurately and easily by correcting the path board amount directly from the correction amount thereby preventing the accumulation of error.  
     CONSTITUTION: Fixed position detecting mark 7 is provided on a path board 6, and the path amount when the mark 7 will pass the entrance and exit side mark detectors 3, 4 are detected by detectors 1, 2 then stored in memory sections 21, 22 and stored in memories 41, 42 of correction arithmetic unit 23. The pass amount is corrected by calculating the difference M-N where M is the amount stored in the entrance side memory 21 while N is the amount stored in the exit side memory 22, then adding to the exit side memory 22 when M>N. When M<N it is added to the entrance side memory 21. In such a manner any one of memory is corrected when the mark 7 passes through the exit side, and the loop amount is always calculated as follows. Loop amount=Entrance side memory detected amount-Exit side memory detected amount. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H0433852-A (JP)
Title: Laminated film, manufacture thereof and utility
Inventor: ISHINO TOSHIAKI
IPC: H05B33/04
Filed: 1990-05-29
Abstract: PURPOSE:To obtain a film having excellent moistureproofness by laminating two types of PCTFE (polychlorotrifluoroethylene) layers one of which has high crystallinity and the other of which has a low flow rate. CONSTITUTION:A PCTFE(polychlorotrifluoroethylene) film 2 having 5X10<-2>cc/ sec or less is superposed on one side surface of a PCTFE film 1 having 7X10<-2> cc/sec or more of MFR (flow rate), thermally fusion-bonded, then heat treated to form a film having 7X10-<2>cc/sec or more of MFR and 75% or more of crystallinity. The heat treatment includes, for example, (a) a method of gradually cooling from a melted state after thermally fusion-bonding, (b) a method of once cooling after thermal fusion-bonding, again heating to a melting point or higher and then gradually cooling, (d) a method of thermally fusion-bonding, cooling and then heating, etc. In the cases of (a) and (b), the lower the gradually cooling speed is, the larger the crystallinity becomes. In the case of (c), it is desirable to heat at 150-190 deg.C for 0.5-5 hours, and the higher the temperature is, the larger the crystallinity becomes. In the case of (c), after heating, it is left to stand for or forcibly cooled to an ambient temperature.
Patent JP-S5929432-A (JP)
Title: High-frequency high-output transistor
Inventor: KOYAMA MASAHARU
IPC: H01L21/60
Filed: 1982-08-11
Abstract: PURPOSE:To improve high-frequency characteristics while enhancing stability by filling a hole for a small seat for an insulating protective film coating the upper section of a metallized wiring, width thereof is reduced, with a metallic material and joining the material with the metallized wiring while forming a seat for bonding with an external electrode as being protruded to a higher section from the upper surface of the insulating protective film. CONSTITUTION:The width of the metallized wiring 11 formed onto an oxide film 2 is reduced, and floating capacitance is minimized extremely. The surface of a chip 1 is coated with the thick insulating protective film 12 for protecting the metallized film 12. The hole 13 for the small seat is formed to the insulating protective film 12 through etching. The hole 13 is filled with the same metallic material 14 as the metallized wiring 11 and the material is joined, the material is protruded to the higher section from the upper surface of the insulating protective film 12, and the seat 14 for bonding is formed. A metallic small wire 6 is bonded with the seat 14. Accordingly, the width of the metallized wiring 11 is minimized extremely, and floating capacitance by the wiring is reduced.
Patent JP-H0434947-A (JP)
Title: Wiring forming method
Inventor: MORIYA HIROYUKI
IPC: H01L23/52
Filed: 1990-05-30
Abstract: PURPOSE:To prevent the adverse effect of alloy on a ground layer such as an interlayer film by forming a layer wherein inactive atomic ions are implanted on a part other than the surface of an aluminum wiring layer which is bonded with gold, and thereafter performing the bonding with the gold. CONSTITUTION:A first Al layer 11 is formed on an interlayer film 3. Ar ions are implanted into the Al layer 11. The ion implantation is performed by implanting the ions into the surface of the first Al layer 11. A first inactive- atom (Ar in this case) implanted layer 5 is formed. A second Al layer 12 is formed. An Al interconnection layer 1 in this embodiment is formed of the first and second Al layers 11 and 12. When gold is bonded on the surface of the Al interconnection layer 1, the formation of alloy of the gold and the Al is stopped by the inactive-atom implanted layer 5 which is the film containing Ar. Therefore, the interlayer films 3 between the ground layers is not damaged. Since the inactive-atom implanted layer 5 is not formed on the surface of the Al wiring layer 1, adverse effects do not occur in bonding.
Patent JP-2000332293-A (JP)
Title: Iii-v nitride semiconductor light emitting element and its manufacture
Inventor: ISHIDA SHINYA
IPC: H01S5/323
Filed: 1999-05-21
Abstract: PROBLEM TO BE SOLVED: To reduce a through inversion density, make superior also a surface homology, and enhance an element characteristic by a method wherein, on a III-V nitride system semiconductor layer not containing Mg and Zn, Mg or Zn doped III-V nitride system semiconductor layer is grown. SOLUTION: An AlN buffer layer 11 is grown on a sapphire substrate 10 at a substrate temperature 550 deg.C, and a GaN: Si layer 12 of 5 μm is grown at a substrate temperature 1100 deg.C, and a GaN: Mg layer 13 of 0.5 μm is grown thereon at the same temperature 1100 deg.C. Thereafter, an n-type GaN: Si contact layer 14 of 5 μm is grown on the GaN: Mg layer 13 at the same temperature. Next, the substrate temperature drops down to 760 deg.C, an InGaN active layer 15 of 2 nm is grown, and an AlGaN: Mg evaporation preventing layer 16 of 10 nm is grown thereon at the same temperature. Thereafter, the substrate temperature arises up to 1050 deg.C, and a p-type GaN: Mg contact layer 17 of 0.4 μm is grown. A lamination structure from the n-type contact layer 14 to a p-type contact layer 17 is made as a light emitting element structure.
Patent JP-H08302768-A (JP)
Title: Faucet mounting construction
Inventor: MATSUMOTO DAIJI
IPC: E03C1/042
Filed: 1995-04-28
Abstract: PURPOSE: To make it possible to make very small the inclination of a faucet main body in order to prevent the water leakage of a packing section. CONSTITUTION: Faucet mounting construction is equipped with a faucet main body 3 bringing a seat section 3a into contact with the surface 1a of a faucet mounting member 1 through a packing 2, a bolt 4 eccentrically projected from the faucet main body 3, a binding body 15 mounted to the bolt 4 so as to bring into contact with the bottom 1b of the faucet mounting member 1 and a nut 6 screwed in the bolt 4. The faucet mounting member 1 is held between the binding body 15 and the seat section 3a of the faucet main body 3 with tension P of the bolt 4 generated by fastening the nut 6. By transferring moment reaction force to the nut 6 from the binding body 15, the opposite couple moment N from the rotational direction of moment of a couple M generated in the seat section 3a of the faucet main body 3 is generated in the bolt 4 itself by tension P of the bolt.
Patent JP-S62296681-A (JP)
Title: Sound signal recording device
Inventor: HIRAMATSU TATSUO
IPC: H04N5/92
Filed: 1986-06-16
Abstract: PURPOSE:To switch automatically and project plural images corresponding to a serial sound signal during its reproduction by superposing track numbers of still pictures read out of a storage means successively upon the sound signal. CONSTITUTION:When a switch 90 is turned on, the output of a timer 72 which is passed through a delay circuit 71 is counted and the counting output of a counter circuit 1 is used as an address to read track numbers of the still pictures recorded on the disk 1, etc., of a storage circuit 60 successively. Those track numbers and compressed sound information from a sound compressing circuit 4 which contains a tracking signal are added and multiplexed by the adder 30 of a recording signal compressing circuit 3 and recorded on free tracks of the disk 1. Therefore, the sound signal is reproduced and then plural corresponding images are switched automatically and projected on the basis of the still picture track numbers in the multiplex signal.
Patent JP-H01310577-A (JP)
Title: Semiconductor nonvolatile memory
Inventor: IMURA YUKIHIRO
IPC: H01L29/792
Filed: 1988-06-08
Abstract: PURPOSE:To facilitate the formation of a gate insulating film even it it is equal to or less than 500Angstrom  in thickness by a method wherein a floating gate electrode is formed of an N-type polycrystalline silicon. CONSTITUTION:A floating gate electrode 4 is formed of an N-type polycrystalline silicon. Moreover, a threshold voltage of an EPROM memory element is made equal to or less than -1.1V while electrons are not injected into the floating gate electrode 4 so as to correct a work function difference induced by making the electrode 4 be of an N-type. As mentioned above, a floating gate electrode is formed of an N-type polycrystalline silicon, whereby a gate insulating film equal to or less than 500Angstrom  in thickness can be easily formed, and phosphorus or arsenic which is used to make the polycrystalline silicon an N-type is hardly diffused into a thermal oxide film from the polycrystalline silicon, consequently a gate insulating film 6 is not decreased in a dielectric breakdown strength and yield. Moreover, this method is high in conformability to a current process, so that a process can be simplified.
Patent JP-S5931376-A (JP)
Inventor: YAMAMOTO TAKAHIKO
IPC: E05C17/22
Filed: 1982-08-13
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S621389-A (JP)
Title: Color image pickup device
Inventor: TAKANASHI RYOYU
IPC: H04N9/07
Filed: 1985-06-27
Abstract: PURPOSE:To reduce a color multiplex carrier frequency to improve the S/N and the color reproducibility by setting the scanning direction of an image pickup tube in the lengthwise direction of stripes of a color stripe filter. CONSTITUTION:Synchronization of one set of G, C, and W of a color stripe filter 1a is set so as to correspond to one horizontal period H in the NTSC system. In the first H, the signal from an AD converter 3 is written in a memory 4a successively in the order of points a11, a12-, a21, a22-, a31, a32-. In the second H, signals in the first set S written in the memory 4a are read out in the direction orthogonal to the write direction successively in the order of a11, a12-, a12, a22-, a23, a33-. The signal is written in a memory 4b successively in the order of a71, a72-, a81, a82- in the same direction as the first H. Hereafter, signals of each set are written in and read from memories 4a and 4b alternately in the same manner.
Patent JP-H10331862-A (JP)
Title: Universal joint and assembly thereof
Inventor: SHIMIZU TAKESHI
IPC: F16D3/40
Filed: 1997-05-30
Abstract: PROBLEM TO BE SOLVED: To prevent abrasion without inserting any bearing into a pin hole part by applying lubricant into a clearance between a pin driven into a block body and a pin hole of a yoke engaged with the pin and encapsulating the outside faces of coupling main bodies by means of a rubber cover. SOLUTION: In a universal joint 1b, a pin hole in a yoke part is provided with an inside diameter which is substantially equal to the outside diameter of a pin 13b driven into a block body 14, so that transmission of high torque can be accomplished via a larger contact area without inserting any bearing or bush. In this part, grease containing molybdenum is applied from consideration of abrasion, as the pin 13b and the pin hole directly slide on each other.  In addition, for the purpose of prevention of scattering of grease and of adhesion or penetration of dust from a peripheral environment, a rubber cover 16b, which is integrally molded into a cylinder, is installed over the outer circumferential of coupling main bodies 11b, 12b, so that the outside faces of the coupling main bodies 11b, 12b are covered and wrapped up In this way, abrasion in the pin part transmitting high torque can be lowered.
Patent JP-S5844229-A (JP)
Title: Cylinder head of 4-cycle internal-combustion engine
Inventor: HOSOI KOUJI
IPC: F01L1/26
Filed: 1981-09-08
Abstract: PURPOSE:To both increase compression ratio of an engine and improve its fuel consumption, by locating a valve of the plural intake valves to the center of a bore, protrusively deviating a valve seat of said center located valve into a combustion chamber and forming the center part of the bore to a shallow shape. CONSTITUTION:Four intake valves 16A-16D are parallelly provided to one another in a state of tilting for a cylinder 10, and one intake valve 16A of these valves is arranged on the center 12 of a bore. Here a valve stem 30A of the valve 16A is formed longer than that of valve stems 30B-30D of the other valves 16B-16D, while a valve seat 44A is deviated in a combustion chamber 23 from the other valve seats 44B-44D. In this constitution, the center part of the bore in the combustion chamber 23 can shallowed, accordingly compression ratio is increased, simultaneously S/V ratio (combustion chamber surface area/volume Ratio) can be decreased.
Patent JP-S63305184-A (JP)
Title: Cold-setting compound
Inventor: TANAKA SUKEYUKI
IPC: C09K3/10
Filed: 1987-06-08
Abstract: PURPOSE:To obtain the title tough compound of a high softening point, excellent water resistance and low odor, by reacting a normally liquid fatty acid with a metal hydroxide. CONSTITUTION:A paste metal hydroxide (B) is obtained by mixing 100g of a metal hydroxide [e.g., Ca(OH)2] of a particle diameter of 100-300 mesh with 100-600g of an oil (e.g., chlorinated paraffin). 100g of a normally liquid fatty acid (A) (e.g., oleic acid) is reacted with 10-100g (in terms of the metal hydroxide) of component B and, optionally, at most 200g, per 100g of the metal hydroxide, of a water trapping agent (e.g., silica gel) to obtain a cold-setting compound.
Patent JP-S6121811-A (JP)
Title: Ground clearance adjuster of automobile
Inventor: NOZAWA YOSHIAKI
IPC: B60G17/04
Filed: 1984-07-09
Abstract: PURPOSE:To prevent the posture of a vehicle from becoming unstable by lighting up or blinking a warning lamp and at the same time interrupting the ground clearance adjusting function when the same suspension generates an up signal and a down signal at the same time. CONSTITUTION:A signal from a changeover switch 6 which changes a ground clearance from a usual level to a higher level is to be about to a controller 5. And the signal from a car speed sensor 7 is to be also input thereto. The controller 5 increases the ground clearance in accordance with the signals from ground clearance sensors A-D which are mounted on front left, front right, rear left and rear right air suspensions FL, FR, RL and RR. The controller 5 determines whether or not the input signals from ground clearance sensors A-D are input to a logic circuit 51. When an up signal and a down signal are simultaneously generated, a warning lamp blinks and supply of current for the controller 5 is cut off to interrupt a ground clearance adjusting function.
Patent JP-H0437135-A (JP)
Title: Manufacture of semiconductor device
Inventor: SUGIURA KATSUYOSHI
IPC: H01L21/3205
Filed: 1990-06-01
Abstract: PURPOSE:To obtain a method to perform a low temperature process that is suitable for a III-V compound semiconductor of InSb or the like and to form highly reliable multilayer interconnection as well by forming an insulating film with sputtering on the whole surface including the upper part of an SiO2, insulating film that is formed at a stepped part and forming an upper wiring region on the above insulating film or taking measures to meet the like situation. CONSTITUTION:When a semiconductor device is manufactured by forming multilayer interconnection on a III-V compound semiconductor substrate 1, the manufacture of this device requires respective process : a process for forming lower wiring 2; a process for forming a coated film through spin-coating of coating liquid that is used for forming an SiO2, insulating film on the whole surface including the upper part of lower wiring 2; a process for having an SiO2 insulating film 4 obtained by baking the above coated film through heat treatment; a process for removing the SiO2 insulating film 4 at a part other than a stepped part by anisotropic etching; a process for forming an insulating film 5 by sputtering on the whole surface including the upper part of the SiO2 insulating film 4 at the stepped part; a process for forming upper wiring 6 on the above insulating film 5. For example, lower wiring 2 is formed on an InSb substrate 1 and the coated film mentioned above is formed after depositing an SiO2, film 3 on the whole surface by sputtering.
Patent JP-H09118676-A (JP)
Title: Compound with nitrogen-containing nonbasic side chain and medicine preparation
Inventor: JIEFURII ARAN DOTSUJI
IPC: A61P19/10
Filed: 1996-06-04
Abstract: PROBLEM TO BE SOLVED: To obtain a novel compound having a nitrogen-containing non-basic side chain, and useful for relaxing and inhibiting the symptoms of postmenopausal syndromes such as osteoporosis, aortic smooth muscle cell multiplication such as restenosis, uterine fibrous tumor diseases, and endometritis.  
     SOLUTION: A compound of formula I {R 1 , R 2  are each H, OH, a 1-6C alkoxy, a 1-6C alkylcarbonyloxy, a group of the formula: 0-C(0)-Ar [Ar is (substituted) phenyl], etc.; W is CHOH, carbonyl, CH 2 ; Y is a group of the formula: (CH 2 ) n  (n is 1-3), a CH-(1-4C)alkyl; V is S, O, CH 2 CH 2 }. For example, 6-hydroxy-3-[4-(cyanomethoxy)phenyl]carbonyl-2-(4-hydroxyphenyl) benzo[b]thiophene. The compound of formula I wherein Y is CH 2 ; and W is C(0); and V is S is obtained by reacting a compound of formula II with a compound of formula III (R is CN). 
     COPYRIGHT: (C)1997,JPO
Patent JP-H06350391-A (JP)
Title: Surface acoustic wave device
Inventor: HOSAKA NORIO
IPC: H03H9/64
Filed: 1993-06-14
Abstract: PURPOSE:To obtain a surface acoustic wave device with a low loss by connecting plural one-opening surface acoustic wave resonators with a different resonance frequency in series with each other to form a surface acoustic wave resonator thereby designing the optimum surface acoustic wave resonator. CONSTITUTION:A surface acoustic wave resonator is formed by connecting plural one-opening surface acoustic wave resonators each having an electrode 4 and having a different frequency in series on a piezoelectric substrate 3. The substrate 3 and an inductance element form the surface acoustic wave device. Thus, the resonance frequency of another resonator is set optionally by designing the resonance frequency of at least one resonator from among resonators in matching with a block band. Thus, a band with a small loss is set as a transmission band by setting the resonance frequencies close to the transmission band.