Patent SG-11201908485T-A (SG)
Title: New formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
Inventor: LEI XINJIAN
IPC: C23C16/455
Filed: 2018-03-14
Abstract: FIGBf is lot in every cycle cycles 51:100 z — subArote themot annul (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIPO I PCT Iiiimmolionsonolomolomollumomomovoimill (10) International Publication Number WO 2018/170126 Al (51) International Patent Classification: C23C 16/40 (2006.01) C23C 16/455 (2006.01) (21) International Application Number: PCT/US2018/022433 (22) International Filing Date: 14 March 2018 (14.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/471,647 15 March 2017 (15.03.2017) US 62/477,812 28 March 2017 (28.03.2017) US 15/914,968 07 March 2018 (07.03.2018) US (71) Applicant: VERSUM MATERIALS US, LLC [US/US]; 8555 South River Parkway, Tempe, AZ 85284 (US). (72) Inventors: LEI, Xinjian; 8555 South River Parkway, Tempe, AZ 85284 (US). MACDONALD, Matthew, R.; 8555 South River Parkway, Tempe, AZ 85284 (US). KIM, Moo-Sung; 8555 South River Parkway, Tempe, AZ 85284 (US). LEE, Se-won; 8555 South River Parkway, Tempe, AZ 85284 (US). (74) Agent: NEAGLE, Damon, A.; Design IP, P.C., 5050 W. Tilghman Street, Suite 435, Allentown, PA 18104 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, (54) Title: NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS Homogeneous Si-doping (57) : In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol%, preferably 2 to 6 mol%, most preferably 3 to 5 mol%, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations. [Continued on next page] WO 2018/170126 Al MIDEDIMOMMIONE1013010111EHOIRODEVOIMIE TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) Published: with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))