baber/WOPTO huggingface dataset:
Patent TW-508608-B (TW)
Title: Semiconductor relay and control method of semiconductor relay
Inventor: HORIBATA KENJI
IPC: H03K17/082
Filed: 2001-11-19
Granted: 2002-11-01
Abstract: Because a semiconductor relay system of this invention comprises an across-element voltage detecting circuit 116 which delivers an across-element voltage detection signal depending on the presence/absence of an across-element voltage exceeding a predetermined threshold; an element driving circuit 112 for delivering an element driving signal in response to a control input signal; a logic-based determination circuit 119 for delivering a logic-based determination signal depending on the presence/absence of an across-element voltage detection signal; and a filtration circuit for removing a logic-based determination signal of external disturbing elements to produce an element safety check signal, it is possible to reliably detect the disorder of a triac 114.
Patent TW-519721-B (TW)
Title: Gradient barrier for copper back-end-of-line technology
Inventor: LIOU FU-TAI
IPC: H01L21/762
Filed: 2001-12-07
Granted: 2003-02-01
Abstract: The present invention is directed to a structure of a gradient barrier layer. The gradient barrier with a composite structure of metal/metal salt of different composition/metal such as Ta/TaxN1-x/TaN/TaxN1-x/Ta (tantalum/tantalumx nitride1-x/tantalum nitride/tantalumx nitride1-x/tantalum) is proposed to replace the conventional barrier for copper metallization. The gradient barrier can be formed in a chemical vapor deposition (CVD) process or a multi-target physical vapor deposition (PVD) process. For CVD process, using the characteristics of well-controlled reaction gas injection, the ratio of tantalum (Ta) and nitrogen (N) can be modulated gradually to form the gradient barrier. For the multi-target PVD process, the gradient barrier is formed by depositing multi-layers of different composition TaxN1-x films. After subsequent thermal cycle processes such as metal alloy, the inter-layer diffusion occurs and a more smooth distribution of Ta and N is achieved for the gradient barrier. The advantages of forming the gradient barrier include a well-controlled process, a strong adhesion between via and landing metal, more uniform step coverage, and less brittle to reduce crack.
Patent TW-543158-B (TW)
Title: Tracking type memory cell capable of reducing cell current degradation and substrate noise and its deployment method
Inventor: JANG MENG-FAN
IPC: H01L21/8244
Filed: 2001-12-07
Granted: 2003-07-21
Abstract: A tracking type memory cell circuit that can reduce cell current degradation and substrate noise is introduced. It consists of general bit cells that are deployed on the tracking type memory cell circuit, general strap cells that are deployed on the tracking type memory cell circuit and tracking cells that are distributed in the bit line tracking columns to trace, so as to detect the states of each bit cell in the bit cell array and reduce the ground line induced ground bumping effect. The strap cells having diodes are distributed on the two sides of the track cells to reduce the cell current degradation and substrate noise.
Patent TW-494271-B (TW)
Title: Liquid crystal projection system with color gradient correction
Inventor: HAVEN TOM
IPC: G03B21/14
Filed: 2001-12-11
Granted: 2002-07-11
Abstract: This invention provides a liquid crystal projection system with color gradient correction, which consists of a light source, a color separation device, a liquid crystal valve, a color synthesis cube prism and a projection lens. The invention is characterized by the color separation device further containing: a first dual-color filtration film having a first half maximum wavelength (HMW); and a second dual-color filtration film having a second HMW greater than the first HMW, in which the second dual-color filtration film and the above-mentioned first dual-color filtration film are installed in a co-planar fashion. The fist dual-color filtration film is used to produce a color beam with a gradient variation from a beam generated by the light source, while the second dual-color filtration film is used to produce another color beam with another gradient variation from a beam generated by the light source. The two color beams with different gradient variations can neutralize each other and further generate a first color beam without a gradient variation.
Patent TW-518663-B (TW)
Title: Electron beam projection mask
Inventor: KOBA FUMIHIRO
IPC: G03F1/20
Filed: 2001-12-28
Granted: 2003-01-21
Abstract: The batch projection regions 13 and 14 of the electron beam projection mask are arranged so that pattern density may be equalized on the whole wafer surface.
Patent TW-569571-B (TW)
Title: Bandwidth control method and device of network switch
Inventor: FENG RUNG-YOU
IPC: H04L12/00
Filed: 2001-12-31
Granted: 2004-01-01
Abstract: The invention relates to a bandwidth control method and device of network switch, which primarily calculate the average traffic (Tr[n+1]) generated before time span n+1 of the port at client end when port at client end has packets waiting for transmission. Tr[n+1]=g*TrDelta[n]+(1-g)*Tr[n], where g < 1, TrDelta[n] is traffic of client's port at time span n, Tr[n] is the average traffic actually generated before time span n. When Tr[n+1] is less than the threshold value Tr_pre of bandwidth of the client's port, packet can then be sent and received.
Patent TW-I291710-B (TW)
Title: Fabrication method for non-volatile memory
Inventor: FAN TSO-HUNG
IPC: H01L27/115
Filed: 2002-01-16
Granted: 2007-12-21
Abstract: A fabricating method of non-volatile memory is to offer a substrate first while a bar stacking structure is formed on the substrate. And then a buried drain is formed on the substrate at both side of the bar stacking structure. An insulation layer is formed on the buried drain. Then a silicon layer and a top-cap layer are formed on the substrate in proper order. The top-cap layer, the silicon layer and the bar stacking structure are patterned in a direction perpendicular to the buried drain for forming multiple of gate structure. Then a lining layer is formed on the surface of the silicon later, the gate structure and the substrate that are not covered by the top-cap layer. The top-cap layer is removed and then a metal silicide is formed on surface of the exposed silicon layer.
Patent TW-522092-B (TW)
Title: Method for making nozzle plate of inkjet printer head with lithography process
Inventor: LINLIU KUNG
IPC: B41J2/135
Filed: 2002-02-01
Granted: 2003-03-01
Abstract: A method for making nozzle plate with lithography comprises steps of film laminating, exposure and development directly performed on a silicon substrate to effectively control position, diameter and shape of nozzle orifice for obtaining high resolution of ink-jetting with high quality. The first method is to perform two exposure steps on the film to form a step-like unexposed area and to perform a development step on the step-like unexposed area. The second method is to perform two exposure steps and the development steps on the film. The third method is to perform an exposure step on a first film, depositing the second film of different material thereon, performing a backside exposure step on the first film and then performing exposure and development steps on the second film.
Patent TW-533136-B (TW)
Title: Liquid container, liquid supply system and ink jet recording apparatus utilizing the same, and method of mounting liquid container on recording apparatus
Inventor: YAMAMOTO HAJIME
IPC: B41J2/175
Filed: 2002-02-07
Granted: 2003-05-21
Abstract: The invention provides a liquid container capable of supplying ink to the exterior until the ink is almost depleted, and allowing simple detection of the remaining ink amount and deviated distribution of the ink component after a prolonged standing. The liquid container is provided with a first connection port and a second connection port on the bottom, communicating with a liquid chamber. The connection port is positioned closer to the end of the container bottom, while the connection port is positioned closer to the center thereof. In the connection ports, elastic members are provided so as to prevent leakage of the ink in the liquid chamber.
Patent TW-567096-B (TW)
Title: Cleaning apparatus and cleaning method
Inventor: YOTSUMOTO HATSUO
IPC: B08B3/08
Filed: 2002-02-27
Granted: 2003-12-21
Abstract: A cleaning apparatus and a cleaning method are provided. The cleaning apparatus comprises an ozone dissolving equipment for dissolving ozone supplied from an ozone supply source in the cleaning water, and a cleaning water tank for storing the cleaning water containing ozone an object to be cleaned can be immersed in the cleaning water stored therein. The cleaning apparatus is characterized in that a cleaning water containing alkali bromide is used so as to increase the ozone amount that can dissolve in the cleaning water and to lengthen the duration time of the clean ability of the ozone cleaning water.
Patent TW-I266366-B (TW)
Title: Method of improving non-uniformity of chemical mechanical polish
Inventor: HU SHAO-CHUNG
IPC: H01L21/304
Filed: 2002-02-27
Granted: 2006-11-11
Abstract: A copper layer is positioned on a semiconductor wafer. A first chemical solution is used to clean a surface of the copper layer. Following this, a second chemical solution is used to perform a chemical mechanical polish to remove portions of the copper layer and make the remaining copper layer have a planar surface.
Patent TW-593576-B (TW)
Title: A method of making solventless photosensitive thermal-setting materials
Inventor: YE SZ-TAU
IPC: C09D163/10
Filed: 2002-03-04
Granted: 2004-06-21
Abstract: This invention relates to a method of making solventless photosensitive thermal-setting materials, in which the current organic solvent is replaced with photo-reactive monomers as the diluents. Combined with the projection-type laser UV exposure and alkaline-developing steps, the solventless photosensitive thermal-setting materials with good chemical and thermal resistance can be used as a solder mask for printed circuit board.
Patent TW-528676-B (TW)
Title: Method for producing metal laminate
Inventor: ONODERA MINORU
IPC: H05K3/02
Filed: 2002-03-05
Granted: 2003-04-21
Abstract: To continuously produce a metal laminate having excellent dimensional stability and flatness, there is provided with a method of producing a metal laminate in which a thermoplastic liquid crystal polymer film (5') capable of forming an optically anisotropic melt phase is heat-treated on a heat treatment roll having unevenness (91) on its surface and subsequently a metal sheet (3) is bonded to at least one side of the film (5').
Patent TW-588362-B (TW)
Title: High speed address sequencer
Inventor: AKAOGI TAKAO
IPC: G11C16/06
Filed: 2002-03-13
Granted: 2004-05-21
Abstract: An address sequencer circuit for generating addresses for accessing a memory device. The address sequencer includes a plurality of address stages that are coupled together, and also includes a first clock generation circuit that receives an input clock and generates a first clock signal that is coupled to a first portion of the address stages. A second clock generation circuit is provided that receives the input clock and a toggle signal and generates a second clock signal that is coupled to a second portion of the address stages, thereby allowing the first and second portions of address stages to be clocked at different rates.
Patent TW-543216-B (TW)
Title: Non-aqueous electrolyte secondary battery
Inventor: IMACHI NAOKI
IPC: H01M4/131
Filed: 2002-05-28
Granted: 2003-07-21
Abstract: An object of the invention is to provide a non-aqueous electrolyte secondary battery having a plateau in voltage in the 4-V region well comparable to that of lithium cobalt oxide, a high energy density, and cell characteristics such as safety, cycle properties, and high temperature storage properties. A non-aqueous electrolyte secondary battery according to the present invention comprises a positive electrode containing a positive electrode active material admixed therein a lithium-containing complex oxide having a layered crystalline structure expressed by general formula LiXMnaCobO2 (where X is a value of 0.9 or greater but not greater than 1.1, a is a value of 0.45 or greater but not greater than 0.55, b is a value of 0.45 or greater but not greater than 0.55, and the sum of a and b is greater than 0.9 but not greater than 1.1), together with either of a lithium cobalt oxide and a spinel-type lithium manganate; a negative electrode containing a negative electrode active material capable of intercalating and deintercalating lithium ions; a separator separating the positive electrode and the negative electrode; and a non-aqueous electrolyte.
Patent TW-579439-B (TW)
Title: Semi-transmitting reflection film
Inventor: TAKEHISA KEITA
IPC: G02B1/10
Filed: 2002-06-04
Granted: 2004-03-11
Abstract: The present invention provides a semi-transmitting reflection film, which is made by forming a translucent layer containing natural pearlescent color on at least one face of the plastic thin film. The invention is featured with the followings. The semi-transmitting reflection layer containing natural pearlescent color is positioned with a positioning angle smaller than 15 DEG with respect to the plane direction of the plastic thin film. The transparent layer containing natural pearlescent color has an average particle diameter 3 to 60 mum, in which the ratio between the average particle diameter (D) and the semi-transparent reflective layer thickness (T) is 1.3 to 30. By using the semi-transmitting reflection film, it is capable of manufacturing a semi-transmitting reflection film with excellent visibility under both incident light and reflective light.
Patent TW-552587-B (TW)
Title: Reduced pressure drop debris filter bottom nozzle for a fuel assembly of a nuclear reactor
Inventor: SMITH MICHAEL G
IPC: G21C3/33
Filed: 2002-07-10
Granted: 2003-09-11
Abstract: A reduced pressure drop debris filter bottom nozzle for use in a fuel assembly of a nuclear reactor includes a plate member formed with a plurality of first flow holes and a plurality of second flow holes. The first flow holes are oblong in cross section and may be of an oval configuration. The first flow holes each have in cross section a major axis and a minor axis, the major axis being longer than the minor axis. The second flow holes are circular in cross section and may have a diameter substantially equal to the minor axis of the first flow holes. The bottom nozzle also features support ligaments that extend between the first flow holes and that are axially aligned with fuel rods within the fuel assembly.
Patent TW-548847-B (TW)
Title: Method for forming gate insulating film
Inventor: KIKUCHI SHUICHI
IPC: H01L21/8234
Filed: 2002-07-16
Granted: 2003-08-21
Abstract: This invention provides a method for forming gate insulation film of varying thickness without hindering element isolation capabilities. The method includes the steps of: forming a thick gate insulation film 9 and a thin gate insulation film 10 on a semiconductor substrate 1, forming a polysilicon film 11 on the gate insulation films 9, 10, forming a silicon nitride film 14 on a desired region of the polysilicon film 11, and forming an element isolation film 15A and a gate insulation film 15B by selectively oxidizing the polysilicon film 11 using the polysilicon nitride film 14 as a mask.
Patent TW-533170-B (TW)
Title: Method for low-moisture low-oxygen packaging for IC chip and structure thereof
Inventor: HUNG MING-LANG
IPC: B65B31/02
Filed: 2002-07-26
Granted: 2003-05-21
Abstract: A method for low-moisture low-oxygen packaging for an IC chip is applicable on packaging a chip or a similar product and comprises loading a chip in a groove formed on an open-porous-type polystyrene micro-capsule foamed substrate; loading the substrate in a packaging bag; performing a vacuuming and de-moisturizing operation; and performing a hot sealing on the packaging bag to complete a packaging structure of a chip. The open-porous-type polystyrene micro-capsule foamed substrate is used to support a chip and the bubbles in the material are connected to each other. Therefore, during the vacuuming and de-moisturizing operation, the moisture and oxygen in the foamed article can be fully removed, thereby providing a storage environment with low-moisture and low-oxygen for a chip, as well as reducing the use of a moisture- and oxygen-removal agent.
Patent TW-590967-B (TW)
Title: Flexible container bag
Inventor: KIDO YOSHITARO
IPC: B65D19/22
Filed: 2002-09-11
Granted: 2004-06-11
Abstract: A flexible container bag having a pallet function. Cylindrical soft fork pocket members 3 are attached at two positions at the bottom of the flexible container bag main body 2. Both of the longitudinal ends of the fork pocket member 3 protrude outward of the container bag main body 2. Inner surface members 6 and 8 are attached, respectively, into the fork pocket member 3. Each of the inner surface members 6 and 8 is formed of a woven fabric made of PP mono-filaments.
Patent TW-571158-B (TW)
Title: Substrate having colored layers and method for producing the same
Inventor: TANAKA MITSUHIRO
IPC: G02B5/20
Filed: 2002-09-16
Granted: 2004-01-11
Abstract: The substrate having colored layers of the present invention includes: a substrate; a reflection layer formed on the substrate; and colored layers of different colors formed on the reflection layer and including a plurality of pixel regions, wherein each of the plurality of pixel regions includes a plurality of colorless regions that are substantially colorless.
Patent TW-571513-B (TW)
Title: Level shifter with body-biased circuit
Inventor: KER MING-DOU
IPC: H03K19/00
Filed: 2002-10-25
Granted: 2004-01-11
Abstract: The present invention provides a level shifter, with a body-biased circuit, applicable in the thin film transistor liquid crystal display (TFT-LCD). The body-biased circuit is used to bias the bodies of the input terminal transistors of the level shifter so that the threshold voltages of the input terminal transistors are adjusted. This level shifter operates at a high frequency under low power consumption while inputting a low level signal.
Patent TW-588565-B (TW)
Title: Active matrix organic light emitting diode and method of manufacturing the same
Inventor: LEE HSIN-HUNG
IPC: H05B33/10
Filed: 2002-10-31
Granted: 2004-05-21
Abstract: An active matrix organic light emitting diode (AMOLED) and method of manufacturing the same is provided. The AMOLED consists of a thin film transistor with a gate, a gate insulating, a channel layer, and a low roughness source/drain metal and an organic light emitting device with an anode, an organic emitting layer, and a cathode. The location of the above layers is that the gate is on a substrate, the channel layer is on the gate, the gate insulating is between the gate and the channel layer, and the low roughness source/drain metal is located on the side of the gate and cover portions of the channel layer and the gate insulating. Besides, there is an ohm contact layer between the channel layer and the low roughness source/drain metal. Moreover, the anode is connected with an end of the low roughness source/drain metal, the cathode is the substrate, and the organic emitting layer between the anode and the cathode. Furthermore, there is a passivation layer between the thin film transistor and the organic emitting layer.
Patent TW-I257311-B (TW)
Title: Rapidly disintegrable solid preparation
Inventor: SHIMIZU TOSHIHIRO
IPC: A61K31/496
Filed: 1999-07-27
Granted: 2006-07-01
Abstract: A rapidly disintegrable solid preparation which comprises (i) a pharmacologically active ingredient excepts Lansoprazole, (ii) a saccharide and (iii) a low-substituted hydroxypropylcellulose having 5% by weight or more to less than 7% by weight of hydroxypropoxyl group. The rapidly disintegrable solid preparation has fast disintegrability, suitable strength and no roughness.
Patent TW-591250-B (TW)
Title: Light guiding plate for front light
Inventor: NIIDA EIKI
IPC: G02F1/13357
Filed: 2002-11-29
Granted: 2004-06-11
Abstract: A light guiding plate guides light from a light source (15) and irradiates the light onto a display portion (12). The light guiding plate has an exit plane (14c) facing the display portion (12), and a reflection-exit plane (14d) opposite to the exit plane (14c). The reflection-exit plane (14d) has a first end intersecting the incidence plane (14a) and a second end intersecting the opposite end plane (14b). An inclination angle defined by the incidence plane (14a) and a line that contains the first end and the second end is greater than 0.2 DEG and less than 0.75 DEG. The reflection-exit plane (14d) includes a light admission portion that reflects light entering through or reflected on the incidence plane (14a) to the exit plane (14c). This minimizes the parallax to an invisible level to improve the visibility while improving the uniformity of the brightness distribution.
Patent TW-550128-B (TW)
Title: Segmented ring guide for rolling mill laying head
Inventor: PARISEAU DAVID L
IPC: B21C47/14
Filed: 2002-12-11
Granted: 2003-09-01
Abstract: A laying has a quill rotatable about an axis, and a pipe carried on the quill. The pipe has an entry end arranged to receive a product, and an intermediate portion defining a curved guide path leading from the entry and to a delivery end spaced radially from the quill axis and from which the product is discharged as a helical series of rings. A guide defines a helical extension of the guide path, and comprises a helical support plate projecting outwardly from the quill. A plurality of channel-shaped guide sections supported end to end on the support plate. The guide sections form a segmented radially outwardly facing helical trough surrounded by a cylindrical shroud that cooperates with the guide sections to definee radially and axially confined helical extension of the guide path.
Patent TW-I264912-B (TW)
Title: Method and apparatus for building operational radio firmware using incrementally certified modules
Inventor: SKEBA KIRK W
IPC: H04L9/12
Filed: 2002-12-18
Granted: 2006-10-21
Abstract: According to one aspect of the invention, a method is disclosed. The method comprises generating an asymmetric cryptographic key pair comprising first and second keys; encrypting a boot loader program for a baseband module with said first key; storing said second key in said baseband module; and distributing said encrypted boot loader program together with said second key.
Patent TW-I256086-B (TW)
Title: Method of fabricating annealed wafer
Inventor: MUN YOUNG-HEE
IPC: H01L21/324
Filed: 2003-01-06
Granted: 2006-06-01
Abstract: A method of fabricating an annealed wafer of high quality by forming a defect-free active region of a device and controlling an irregular resistivity characteristic. The method includes a first annealing step of pre-heating a silicon wafer at a temperature of about 500 DEG C in a furnace in an ambience of a gas selected from the group consisting of Ar, N2 and an inert gas including Ar and N2; a second annealing step of changing the ambience of the gas into a 100% H2 gas ambience, increasing the temperature to 850 DEG C to 1,150 DEG C, and carrying out annealing for about an hour by maintaining the increased temperature; a third annealing step of changing the ambience of the gas into a 100% Ar gas ambience, increasing the temperature to about 1,200 DEG C, and carrying out annealing for about an hour while the temperature of about 1,200 DEG C is maintained; and a temperature dropping step of decreasing the temperature in the furnace below about 500 DEG C.