baber/WOPTO huggingface dataset:
Patent TW-392236-B (TW)
Title: Method providing uniform immersion time in each portion of semiconductor wafer
Inventor: TSAI CHUNG-SHR
IPC: H01L21/00
Filed: 1998-10-15
Granted: 2000-06-01
Abstract: The present invention provides an immersion method providing uniform immersion time in each portion of semiconductor wafer surface which comprising the following steps: (1) securing at least one a piece of nearly round semiconductor wafer in a wafer box which is used to vertically fix at least one piece of semiconductor wafer for immersion processing; (2) immersing vertically the wafer box in a solution tank so that the semiconductor chip vertically fixed therein can be vertically immersed in the solution of said solution tank and reacting with the solution; (3) vertically rotating the wafer box in the solution of solution tank so that the semiconductor wafer in the wafer boxare placed vertically but with opposite direction; (4) vertically retracting the wafer box from the solution tank after a preset period of time of immersing the wafer box in the solution tank.
Patent TW-463461-B (TW)
Title: Double ended isolated D.C.-D.C. converter
Inventor: SVAERDSJO CLAES
IPC: H02M3/335
Filed: 1998-10-22
Granted: 2001-11-11
Abstract: A D.C.-D.C. down converter utilizes a controlled converter primary switching circuit and a full-wave rectified secondary circuit employing synchronous rectification. An isolation transformer having split first and second secondary windings supplies current to the full-wave secondary circuit. The gating signals for synchronous rectification are produced by a switch conduction control including a secondary switch control receiving control signals from the primary switch control through a control current isolating transformer. The secondary switch control is powered by the secondary converter circuit. Through the use of a split secondary winding of the isolation transformer and a full-wave rectifying circuit, the secondary converter circuit of the D.C.-D.C. converter may readily generate drive voltages for supply to the secondary switch control, allowing the secondary converter circuit and load to be fully isolated from the primary converter circuit and input source.
Patent TW-417060-B (TW)
Title: Programmable access protection in a memory device
Inventor: MALETSKY KERRY D
IPC: G06F21/79
Filed: 1999-02-24
Granted: 2001-01-01
Abstract: A memory device comprises a memory array having corresponding first access control bits to control access thereto. A second set of access control bits is provided to control write access to the first access control bits. The memory array is divided into memory blocks, each block having a corresponding access control bit. At least one such block is further subdivided into pages, each page having a corresponding control bit.
Patent TW-376646-B (TW)
Title: Projection display apparatus
Inventor: FUJIWARA SHUICHI
IPC: G03B21/14
Filed: 1999-02-25
Granted: 1999-12-11
Abstract: A projection display apparatus (1) optically processes light from a light source (81), forms an image corresponding to image information, and projects an enlarged optical image onto a screen using a projection lens unit. The projection display apparatus (1) comprises counter means (21) for detecting the number of times the light source (81) has been turned on, and alarm means (23) for giving an alarm signal that suggests replacing the light source (81) when the output from the counter means (21) reaches a value indicating that the light source has been turned on a predetermined number of times. According to this apparatus, the light source (81) is used in an appropriate condition by taking its service life into consideration because the service life of the light source is affected by the number of times it has been turned on.
Patent TW-376441-B (TW)
Title: Ventilator
Inventor: SUZUMURA EIJI
IPC: F24F7/00
Filed: 1999-03-08
Granted: 1999-12-11
Abstract: The present invention relates to an energy-saving ventilator, which comprises a ventilation frame 13 one end of which being installed with a suction opening while the other end being installed with a discharge opening, a blower 30 installed inside the ventilation frame 13, a control device 19 rotatably controlling the blower 20, and a selection control device 19 controlling one of the natural ventilation mode N and the forced ventilation mode R wherein the natural ventilation mode N undergoes a natural ventilation from the suction opening towards the discharge opening without rotating the blower; and the forced ventilation mode R forcibly sucking in air from the suction opening and discharging air through the discharge opening by rotating the blower 20.
Patent TW-444068-B (TW)
Title: Process for depositing a magnesia-based layer on the dielectric surface of a tile of a display panel and oven for implementing the process
Inventor: BARET GUY
IPC: C23C16/40
Filed: 1999-03-12
Granted: 2001-07-01
Abstract: The present invention relates to a process for depositing a magnesia-based layer on the dielectric surface of a tile of a display panel, consisting in depositing an aerosol on the said dielectric surface by pyrolysis, the said aerosol comprising an organo-metallic magnesium compound dissolved in a solvent. According to this process, the tile (12) is positioned so that its underside is formed by the dielectric surface, the aerosol being injected (14) towards the underside (12A) of the tile while the top side is heated (13). The invention applies especially to plasma panels.
Patent TW-404059-B (TW)
Title: The method of forming the flash memory with high capacitor coupling ratio having rough tunnel oxide on the surface
Inventor: WU SHIE-LIN
IPC: H01L27/115
Filed: 1999-04-13
Granted: 2000-09-01
Abstract: The method provided by this invention comprises patterning the gate structure; then, form a poly-silicon oxide on the sidewall of the gate structure; next, form a silicon nitride spacer, next form the source and drain. Next, remove the spacer and part of the source and drain is exposed. Form an undoped amorphous silicon layer on the surface of the gate structure, oxide and the exposed source and drain. Practice dry oxidation method to transform the non-silicon layer into the tunnel oxide layer having a rough interface with the semiconductor substrate. Next, remove the silicon oxide sited on the oxidation region and on the surface of the gate; next, reform an oxide; next, form a poly-silicon spacer, then form another poly-silicon layer on the gate, and etch the poly-silicon layer to define the floating gate. A dielectrics is formed on the floating gate and a conductive layer is formed on the dielectrics as the control gate.
Patent TW-469301-B (TW)
Title: Method for forming a multi-layered aluminum-comprising structure on a substrate
Inventor: SUNDARRAJAN ARVIND
IPC: H01L21/768
Filed: 1999-04-23
Granted: 2001-12-21
Abstract: The present disclosure pertains to our discovery that a specialized set of process variables will enable the performance of second layer aluminum metallization of multi-layered semiconductor structures within a single processing chamber, without the need for deposition of a nucleation layer of aluminum, and without the need for a reflow step to fill voids formed during metallization. In general, the improved method of the invention includes the following steps: (a) sputter etching the patterned dielectric surface; (b) depositing at least one continuous wetting layer of titanium over the patterned dielectric surface using ion sputter deposition, the wetting layer having a thickness within the range of about 25 Å to about 200 Å on the sidewall of a contact via formed in the substrate; and (c) depositing a layer of aluminum over the titanium wetting layer using traditional sputter deposition at a substrate temperature within the range of about 380 DEG C to about 500 DEG C. The substrate temperature is held substantially constant during deposition of the aluminum layer. The deposition rate of the aluminum layer is increased as the deposition progresses, preferably by increasing the target power as the deposition progresses. The method of the invention is particularly useful for second layer metallization of contact vias having aspect ratios up to about 4:1.
Patent TW-420945-B (TW)
Title: Program guide system with video window browsing
Inventor: REYNOLDS STEVEN J
IPC: H04N5/445
Filed: 1999-05-12
Granted: 2001-02-01
Abstract: An interactive television program guide system is provided in which a viewer may direct a television to simultaneously display a selected television program, a program guide display, and a program guide video window. A viewer may use the program guide video window to browse video of programs shown on the program guide display while continuing to view a previously selected program in the background. The program guide display may display video on demand (VOD) programs, programs to be broadcast in the future, and programs currently being broadcast on other channels. The viewer may browse through programs on the program guide display using a variety of keys on a remote control unit. The viewer may direct the program guide to swap audio and video signals back and forth between programs shown in the video window and programs shown on the background screen.
Patent TW-495901-B (TW)
Title: Process for manufacturing a semiconductor structure
Inventor: SATOH YUJI
IPC: H01L21/76
Filed: 2000-01-17
Granted: 2002-07-21
Abstract: The present invention provides a process for manufacturing a semiconductor structure comprising the steps of: (a) forming a first SiN film on a semiconductor substrate; (b) patterning the first SIN film, etching the resulting substrate using the first SIN film as a mask to form a plurality of first trenches and at least one second trench, so as to form a first islands group and at least one second island-like region; c depositing a SiO2 film to fill the first and second trenches with the SiO2 film; (d) forming a second SiN film over the resulting surface; (e) polishing the second SiN film and the SiO2 film by a CMP method using a first slurry until the surface of the first SiN film on the second island-like region is exposed; (f) polishing the second SiN film and the SiO2 film by a CMP method using a second slurry until the surface of the first SiN film on the first island-like region is exposed; (g) etching a predetermined amount of the SiO2 film; and (h) removing the second and first SiN films.
Patent TW-468357-B (TW)
Title: Headphones with bending wave panel-form loudspeaker
Inventor: AZIMA HENRY
IPC: H04R5/033
Filed: 2000-02-11
Granted: 2001-12-11
Abstract: The headphones (1) comprising a headband (2) with ear speakers (3) each comprising a sound source in the form of a stiff lightweight panel (5) and a vibration exciter (6) for launching bending waves into the panel to produce an acoustic output.
Patent TW-462058-B (TW)
Title: Latch type sense amplifier circuit
Inventor: KUMAGAI KOUICHI
IPC: G11C7/06
Filed: 2000-02-11
Granted: 2001-11-01
Abstract: A latch type sense amplifier circuit comprises first and second latch circuits which output the same output signals when a potential difference between a bit line pair is equal to or greater than a predetermined value. The first and second latch circuits output different output signals when the potential difference between the bit line pair is less than the predetermined value. The latch type sense amplifier circuit further comprises a comparison result signal generating circuit which compares the output signals from the first and second latch circuits and outputs a signal indicative of the comparison result.
Patent TW-442808-B (TW)
Title: Method of manufacturing solid electrolytic capacitor, and apparatus of manufacturing the same
Inventor: KOBATAKE YASUHIRO
IPC: H01G13/00
Filed: 2000-02-16
Granted: 2001-06-23
Abstract: A plurality of capacitor elements can be processed continuously, and the work is extremely easy. As a result, the mass producibility is notably improved. Further, capacitor elements for solid electrolytic capacitor having excellent characteristics such as small leak current, high withstand voltage, and excellent reliability are obtained. The manufacturing method includes: (a) supplying a band metal having a central part in the width direction and a plurality of protrusions formed at an end part in the width direction, (b) forming a dielectric layer on the surface of the plurality of protrusions, (c) disposing a conductor layer above the dielectric layer, (d) adhering a conductive tape to the central part, (e) forming a conductive high polymer film above the plurality of protrusions, by performing electrolytic polymerization by starting polymerization from the conductive tape, (f) peeling the conductive tape from the metal, (g) fabricating a plurality of capacitor elements by cutting off individual protrusions from the plurality of protrusions, from the band metal forming the conductive high polymer film, and (h) fabricating a solid electrolytic capacitor by laminating said plurality of capacitor elements. The conductive high polymer film is formed by using the conductive tape as a common positive electrode, and using a plurality of electrodes connected independently to the leading ends of the individual protrusions as independent negative electrode.
Patent TW-469369-B (TW)
Title: Data writing apparatus, data writing method, and tester
Inventor: SATOH KAZUHIKO
IPC: G01R31/319
Filed: 2000-03-03
Granted: 2001-12-21
Abstract: A data writing apparatus for writing data to a plurality of electric devices, comprising: a pattern memory which stores a plurality of said data to be written to at least one of said electric devices; an ALPG and an address selector which output said plurality of said data sequentially from said pattern memory; a plurality of registers in a data writing controller which store sequence numbers, each indicating at least one of said electric devices; a counter in the data writing controller which counts times of said data being output sequentially; and a data writing control circuit which enables said one of said electric devices indicated by said sequence number that is equal to said times, to write said data.
Patent TW-473756-B (TW)
Title: Thermal circuit breaker and switch
Inventor: SORENSON RICHARD W
IPC: H01H83/12
Filed: 2000-03-15
Granted: 2002-01-21
Abstract: The thermal circuit breaker and switch has fixed and movable contacts, and non-conductive contact and trip actuators. The movable contact is provided on the free end of a lever arm that normally biases the movable contact toward its open position. The contact actuator transfers movement from a rocker or operator to the movable contact arm when no overload condition exists. The trip actuator is L shaped and rotates in a socket when engaged by a thermally sensitive bi-metallic element so as to allow one end of the contact actuator to float freely, allowing the movable contact arm's bias to open the circuit. The bi-metallic element is so positioned as to engage and rotate the trip actuator only when the bi-metallic element is deformed due to an overheat condition that occurs with an overcurrent. A compression spring acts between the upstanding legs of the trip actuator and the underside of the rocker thus biasing the rocker to the 'off' position and biasing the trip actuator to the 'reset' position.
Patent TW-425472-B (TW)
Title: Method and apparatus of measuring thin plate thickness and bend
Inventor: TOJYO FUMIO
IPC: G01B21/08
Filed: 2000-03-17
Granted: 2001-03-11
Abstract: The measuring head 2 is made to move in the width direction of thin plate 9 so as to measure thin plate thickness by using thin plate thickness measurement sensor 3 installed at the measuring head 2. The characterization figure MP of thin plate width direction for the moving mechanism 4 of the prefabricated measuring head is used to correct the measured value of thin plate thickness. The emitting apparatus 5, which is used to emit highly directional electromagnetic wave 5a of light beam and so on for the baseline plane of the characterization figure, is fixed and installed at one side of the main body bracket 1. In order to receive the highly directional electromagnetic wave 5a of light beam and so on stated above as well as the position variation of thin plate thickness of detecting measuring head 2, the non-contact position detecting apparatus 6 is installed at one part of the measuring head 2 or one part of thin plate thickness measuring sensor 3.
Patent TW-I281403-B (TW)
Title: Vaccine
Inventor: CAPIAU CARINE
IPC: A61K39/00
Filed: 2000-03-17
Granted: 2007-05-21
Abstract: The present invention relates to the field of bacterial polysaccharide antigen vaccines. In particular, the present invention relates to vaccines comprising a pneumococcal polysaccharide antigen, typically a pneumococcal polysaccharide conjugate antigen, formulated with a protein antigen form Streptococcus pneumoniae, and optionally a Th1-inducing adjuvant.
Patent TW-436975-B (TW)
Title: Shallow trench isolation process
Inventor: SHIU SHR-YING
IPC: H01L21/76
Filed: 2000-03-23
Granted: 2001-05-28
Abstract: A shallow trench isolation process comprises: forming a pad oxide layer on a substrate; forming a silicon nitride layer on the pad oxide layer; performing a trench etching step to form a plurality of large trenches and a plurality of small trenches; depositing chemical vapor phase deposition oxide in the trenches and on the silicon oxide layer; forming a spin on glass layer on the chemical vapor phase deposition oxide; forming a patterned photoresist layer on the spin on glass layer to cover on the trenches and expose the non-trench portion; performing an ion implantation step to the  spin on glass layer exposed by the photoresist layer; after removing the photoresist layer, using the silicon nitride layer as a stop layer to perform a chemical mechanical polishing step.
Patent TW-474083-B (TW)
Title: Receiver to recover data encoded in a serial communication channel
Inventor: EGLIT ALEXANDER JULIAN
IPC: H04L25/08
Filed: 2000-03-24
Granted: 2002-01-21
Abstract: A receiver to recover data encoded at high speed in a signal over a serial communication channel. A static phase determination circuit indicates whether the signal is early, late or neutral relative to a sampling clock. The sampling clock is used to oversample the signal to generate multiple samples. A token analyzer examines the transitions around a current symbol to determine any short term phase shifts of the boundaries between symbols. The short term phase shifts and the static phase together may be used to accurately select the samples representing the symbols without requiring extensive processing.
Patent TW-550333-B (TW)
Title: System for assisting regeneration of a particle filter
Inventor: SALVAT OLIVIER
IPC: B01D46/42
Filed: 2000-04-05
Granted: 2003-09-01
Abstract: This system for assisting regeneration of a particle filter (4) integrated into an exhaust pipe (2) of an engine, in particular an automotive vehicle engine, including means (5) for injecting fuel into at least some cylinders of the engine (1) during the expansion phase thereof to increase the temperature of the exhaust gases therefrom, without modifying the engine torque required by the user, in order to assist regeneration of the filter, is characterized in that the injection means (5) are adapted to bring about a plurality of injections of fuel in calibrated quantities staggered in time during the expansion phase.
Patent TW-472179-B (TW)
Title: Programmable controller
Inventor: HASHIMOTO YOUICHI
IPC: G05B19/416
Filed: 2000-04-20
Granted: 2002-01-11
Abstract: The purpose of the present invention is to provide a programmable controller with working speed command mode operated by users. The programmable controller comprises a speed mode generator 12 and has speed mode forming parts 12a to 12b to input the amount moved, speed, acceleration time and deceleration time and to calculate the speed mode desired, and output them to the servo motor 17, which is characterized in that: said speed mode generator 12 has plural said speed mode forming parts 12a to 12n, and the desired speed mode is generated by executing any one or more speed forming parts of plural said speed mode forming parts 12a to 12n simultaneously. At this time, said speed mode generator 12 outputs the calculated speed mode to the user operation part 14, so that users can freely proceed the working of speed mode using the user operation part 14.
Patent TW-543002-B (TW)
Title: Method and apparatus for automatically installing and configuring software on a computer
Inventor: ANDERSON ERIC C
IPC: G06F9/445
Filed: 2000-06-17
Granted: 2003-07-21
Abstract: A method including copying a first application from a first non-volatile memory to a second non-volatile memory and setting the first application to be a start-up application. The method further includes booting-up an operating system and executing the first application. The method also includes determining if a suitable connection exists, determining if a needed bandwidth of the suitable connection is available, and downloading a second application if the suitable connection exists and the needed bandwidth of the suitable connection is available The method then includes executing the second application. An apparatus for performing the method is also disclosed.
Patent TW-454290-B (TW)
Title: Wafer carrying device of probing test machine capable of in-line cleaning probe pins
Inventor: LIOU YOU-SHIN
IPC: G01R3/00
Filed: 2000-06-23
Granted: 2001-09-11
Abstract: The present invention provides a wafer carrying device of probing test machine capable of cleaning the probe pins of a probe card without removing the probe card. The wafer carrying device of the probing test machine is used in a wafer probing test system. The wafer probing test system is composed of a testing machine, a testing head and the wafer carrying device of probing test machine. The wafer carrying device of probing test machine includes a carrier and a clamping head arranged on the carrier for clamping the wafer to be tested. The wafer carrying device further includes at least one spray nozzle arranged on the carrier to spray CO2 with co-existed phases of solid, liquid and vapor to clean the probe pins of the probe card arranged below the testing head. A control valve is used to control the operation of the spray nozzle. A control unit is provided to control the operation of the control valve.
Patent TW-I231380-B (TW)
Title: Reflectors for UV radiation source
Inventor: EBEL JAMES A
IPC: F21V7/22
Filed: 2000-07-13
Granted: 2005-04-21
Abstract: This invention provides a reflector for a radiation system comprising a diffuse reflective surface which reflects greater than 50% of the radiation from 240 to 280 nm. This invention further provides a radiation system comprising at least one radiation source and at least one reflector which at least partially encompasses said at least one radiation source wherein said at least one reflector is diffuse.
Patent TW-512433-B (TW)
Title: Method for reducing segregation of ion implantation in P-type metal oxide semiconductor
Inventor: SHIAU JR-YUAN
IPC: H01L21/265
Filed: 2000-07-14
Granted: 2002-12-01
Abstract: The method comprises: providing a semiconductor substrate having an N-well region; forming a gate thereon; performing a P-type ion implantation to form a lightly doped drain (LDD); performing a heavy doping P-type ion implantation to form a source/drain region; performing a self-aligned silicide process to form a metal silicide layer on the surface of the semiconductor substrate and the surface of the gate; performing an annealing thermal process on the metal silicide layer; forming a cap oxide on the surface of the semiconductor structure, in which the cap oxide is used as a diffusion source layer; and performing an ion implantation on the low concentration doping region between the end of the metal silicide layer and the spacer of the side of the gate for refilling a P-type ion with a higher concentration in the low concentration doped region.