baber/WOPTO huggingface dataset:
Patent JP-S5675624-A (JP)
Title: Production of photoelectric display cell
Inventor: WAKAI HARUO
IPC: G02F1/1345
Filed: 1979-11-27
Abstract: PURPOSE: To secure an electrical connection by printing a conductive paste so as to be overlapped to lead terminals on one electrode base plate before adhering 2 electrode base plates such as liquid crystal display cell and so on, and by attaching conductive paste on the cell side after connecting both plates.  
     CONSTITUTION: In respect to upper and lower electrode base plates 11 and 12, sealing material 15 is printed and dried on the lower pheripheral portion of, for example, upper base plate 11 without application of the sealing material to the liquid crystal inlet 17, and conductive paste layers 18 and 18a are printed out on the opposed portion 18a between the upper portion of lead terminal 13a of segment electrode 13 derivated from sealing materail 15 to the outside and lead wire 14a of common electrode 14 on the lower base plate 12 with the same thickness as sealing material 15. Then the both base plates are connected to form cell vessel A. Conductive paste 16 is printed and dried in the same width as respective conductive paste layers 18 and 18a. Thus, conductive paste layers 18, 18a and 16 are prevented from short circuit between adjoining layers and defective connection of lead wires, increasing it's reliability. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S5277538-A (JP)
Title: Controlling method for light pen position detection
Inventor: HORIIKE MITSUNORI
IPC: G06F3/037
Filed: 1975-12-24
Abstract: PURPOSE: To detect a correct position by detecting a position with a light receiving raster at the center of the light receiving range of a light pen and without narrowing a light range of the light pen. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-S5677254-A (JP)
Title: Preparation of naphthalene-2,7-disulfonic acid
Inventor: FUJII HIROKI
IPC: C07C303/06
Filed: 1979-11-27
Abstract: PURPOSE: To prepare the titled compound useful as an intermediate of dye and pigment, without exhaustion of wastes, and reusing sulfuric acid, by reacting naphthalene and/or naphthalenemonosulfonic acid with a sulfonating agent, and diluting the reaction product with water, etc.  
     CONSTITUTION: Naphthalene and/or naphthalenemonosulfonic acid are reacted with a sulfonating agent to obtain naphthalenedisulfonic acid, which is diluted with water to precipitate naphthalene-2,6-disulfonic acid. After separating the naphthalene-2,6- disulfonic acid, the filtrate is further diluted with water to precipitate naphthalene- 2,7-disulfonic acid, which is separated to obtain filtrate (I). On the other hand, the above naphthalene-2,6-disulfonic acid is dissolved in sulfuric acid, and heated to isomerize the acid to naphthalene-2,7-disulfonic acid. The isomerized product is mixed with the above filtrate (I), and the concentration of sulfuric acid in the mixture is adjusted to a proper level. The mixture thus prepared can be used repeatedly as the sulfonating agent for the preparation of the above naphthalenedisulfonic acid. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S5676063-A (JP)
Title: Evaluation of semiconductor element
Inventor: KAWAKAMI GOUJI
IPC: G01R31/26
Filed: 1979-11-26
Abstract: PURPOSE: To enable evaluation by one time temperature scanning by a method wherein an excessive capacitance at plural time points after applying a bias voltage to a semiconductor having a junction capacitance is stored and performed in changing temperature.  
     CONSTITUTION: A bias voltage pulse V of an excessive capacitance C is applied from a bias generating circuit 17 to a junction type semiconductor element 12 having a capacitance such as a P-N junction capacitance and a Schottky junction capacitance in a constant temperature chamber 11. And capacitance values C(t 1 )... at more than 3 time points t 1 , t 2 ... are measured by means of a capacitance measuring apparatus 14 and they are passed through a calculator 15 and are stored in a memory circuit 16. Temperature are changed by means of a temperature controlling system 17 and the obtained capacitance values in a same way are stored in the circuit 16. And when combinations of capacitance differences of temperature corresponding to different time points are counted through the caluculator 15 and a given curve is plotted by means of a plotter 18, an evaluation of a capture cross section of an activation energy trap of a semiconductor element is performed through one time temperature scanning in a short time. The evaluation of a surface level density is also performed in a same way in a short time. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S6215011-A (JP)
Title: Electric discharge machine
Inventor: INOUE KIYOSHI
IPC: B23H7/26
Filed: 1985-07-12
Abstract: PURPOSE:To perform the fine feed of an electrode in a spark gap so efficiently, by transmitting a variation of increase or decrease in deformation of an electrostrictive material to an electrode spindle holding the tool electrode. CONSTITUTION:An electrode 9 is locked to a lower end of an electrode spindle 6 via an insulator 8. One end of rod lever 14 is pivotally supported on the pin 13 tightly attached to this electrode spindle 6, while the other end is pivotally supported on an electrostrictive material 15. When voltage of a working power source 24 goes up, the voltage added to voltage of an auxiliary power source 25 is impressed on the electrostrictive material 15, deforming this electrostrictive material to some extent. The deformation amount is transmitted to the electrode spindle 6 via the rod lever 14. Therefore, the fine feed of the tool electrode is carried out in making it synchronize with the working voltage.
Patent JP-H01319960-A (JP)
Title: Manufacture of film carrier device
Inventor: SENKAWA YASUNORI
IPC: H01L21/60
Filed: 1988-06-22
Abstract: PURPOSE:To prevent the waste of a material, and to evaluate all lots instantaneously by using for a test pattern the marginal section of a film not employed for the finished product of a device. CONSTITUTION:A large number of film carrier device regions 1 are formed to the surface of a film 10, Test pattern regions 5 are shaped at proper positions on the outside of the regions 1. In the end of a manufacturing process, IC chips 2 are fitted into the regions 1, the regions 1 are punched through the processes of resin seal, an electrical test, etc., and the regions 5 are left in the film 10. In the regions 5, voltage is applied among electrodes 5-1 and electrodes 5-3, and leakage currents among the electrodes are measured, thus measuring insulation resistance among patterns. Accordingly, the waste of a material is removed, and all lots are evaluated instantaneously.
Patent JP-H026708-A (JP)
Title: Range finder
Inventor: KO HIDEO
IPC: G02B7/32
Filed: 1988-06-22
Abstract: PURPOSE:To measure distance without being influenced by a camera shake by selecting and outputting one of distance information obtained by a first integrating means, and a second integrating means which operates in a short time before and after switching of integration and reverse integration thereby. CONSTITUTION:When it is assumed that a reflection factor of a projected image position on an object to be photographed is made two times on the way of an ascending integration due to a camera shake, an output voltage V1 of an operational amplifier 10 goes to two times in amplitude on the way in which a timing signal from a control circuit 1 is H. Accordingly, an integral voltage V4 being an output of an operational amplifier 23 goes to two times in inclination on the way of the ascending integration. However, when the signal B is L, there is no amplitude variation of the voltage V1 on the way, therefore, a descending integral time goes to about 1/3 of an ascending integral time. Also, signals E, F are outputted only immediately before and immediately after the signal B is inverted, therefore, a result of distance measurement of 1/2 is obtained. Since two results of distance measurement are different, it is known that 1/3 is influenced by a camera shake, and the control circuit 1 can select a result of distance measurement in a short integral time in which the out-of-focus quantity does not become larger.
Patent JP-S6046023-A (JP)
Title: Manufacture of semiconductor device
Inventor: MUKOUHARA HIROAKI
IPC: H01L21/28
Filed: 1983-08-23
Abstract: PURPOSE:To eliminate the exposure of a diffused junction by forming a stepwise difference on an oxidized film formed in diffusing step, thereby preventing the oxidized film varied from a nitrided film by anodic oxidation from underetching by etching. CONSTITUTION:A hole 5 is selectively formed only at a desired portion near a junction 2 with a photosensitive resin 4, and with the resin as a mask only the oxidized film 3 of the hole 5 is selectively etched to expose the surface of a semiconductor substrate 1. Then, a photosensitive resin 4' having a hole 5' larger than the hole 5 is formed by including the hole 5, with the hole 5' as a mask the film 3 is etched, stopped at the etching in the midway, thereby obtaining the film 3 having a stepwise difference. Subsequently, a nitrided film 6 is formed, and when an anodic oxidation is performed in electrolyte, only the nitrided film region formed on the substrate 1 is oxidized to become an oxidized film 6'. The film 6' can be readily etched by a medicine. Then, a metal layer is formed, for example, by depositing method, a desired pattern is formed by using the resin to form electrodes 7.
Patent JP-H0448605-A (JP)
Title: Manufacture of superconducting coil device
Inventor: HASE RYOJI
IPC: H01F41/04
Filed: 1990-06-14
Abstract: PURPOSE:To prevent a filler in a transition portion from moving when a superconducting coil is mounted on a coil mounting frame and increase the reliability of the interlayer insulation in the transition portion by arranging the transition portion of the superconducting coil densely in a linear section on one side of the coil and mounting the superconducting coil on the coil mounting frame after the interlayer insulation substance in the transition portion is semi-hardened in a state in which the coil is wound around a temporary bobbine. CONSTITUTION:A superconducting coil 3 is wound around a rectangular spool 9 beforehand. Then, it is dismounted from the spool 9, and a straight line portion 3a, an arc portion 3b, a corner portion 3c and a transition portion 10 are assembled into a slot 2 formed on the outer circumference of a coil mounting frame 1. The superconducting coil 3 is insulated to the ground with respect to the coil mounting frame 1 by a wedge insulation 5 and insulation 6 and rigidly held to the coil mounting frame 1 by a wedge 4. The superconducting coil 3 is formed of a superconducting wire 7, and an interlayer insulation 8 formed by winding a heat hardening resin impregnated tape around the superconducting wire 7. It is wound around the coil mounting frame 1 two or more rows, and two or more layers.
Patent JP-H11344596-A (JP)
Title: Nuclear power plant
Inventor: NANJO FUSAYUKI
IPC: F01K23/10
Filed: 1998-06-03
Abstract: PROBLEM TO BE SOLVED: To provide a nuclear power plant capable of enhancing the plant efficiency. SOLUTION: In this nuclear power plant, a secondary cooling water 101 is heated and vaporized with a primary cooling material 100 heated in a pressure vessel (a reactor) 11, the steam 102 is fed to a high-pressure steam turbine 16 and a low-pressure steam turbine 18 to operate a generator 20. The steam 102 is further heated by an exhaust gas boiler 23 by the exhaust gas 107 of the fuel gas 105 and the oxidizing gas 106 used in a solid oxide electrolyte fuel cell 21, and the high-temperature steam 104 is fed to the turbines 16, 18.
Patent JP-S5943736-A (JP)
Title: Storing of fine powder coal
Inventor: SEKIGUCHI YOSHITOSHI
IPC: B65D90/44
Filed: 1982-09-03
Abstract: PURPOSE:To restrict any reaction between the fine powder coal and oxygen and prevent toxication of carbon monoxide or spontaneous combustion by a method wherein inactive gas is fed into the layer of fine powder coal stored in the closed tank and the air in the layer is replaced with the inactive gas. CONSTITUTION:After the fine powder coal 3 is fed into the tank 1, an opening/ closing valve 6 is opened. Then, the inactive gas is fed into the layer of fine powder coal 3 from the blowing port nozzle 5 arranged an appropriate location of the lower part of tank 1, namely at a position lower than X/L=0.6, thereby the air in the tank 1 is discharged out of the tank 1 through the fine powder coal supplying pipe 8 and the air in the layer of fine powder coal 3 is replaced with the noble gas. Then, L is depth of the layer of the fine powder coal 3 and X is a distance ranging from the upper surface of the layer to the nozzle 5.
Patent JP-H104502-A (JP)
Title: Color printer
Inventor: OKUBO HIROSHI
IPC: H04N1/46
Filed: 1996-06-14
Abstract: PROBLEM TO BE SOLVED: To optionally select a color density without changing color tone by setting a density ratio in a density combination table so that a color tone is unchanged in each density stage. SOLUTION: A print density has three density sets as light, normal and dense contrast, and a current density is displayed on a selected density indicator lamp on an operation panel 46. The density is changed by pressing the density switch of the panel 46. When the density stage is not required to be changed, one density switch among light, normal and dense switches is selected. The result, e.g. the normal state is informed to a density selection section 42 at the start of print. Since a host computer 50 designates black/color data as print data, a density stage is retrieved from a density table 41a in the case of color designation, and a density combination table 39a is referenced based on the result to acquire a density ratio and it is informed to a printer section 48.  Thus, the printer section 48 controls the laser beam diameter of Y, M, C with respect to the designated color depending on the ratio and prints out the data.
Patent JP-S6132715-A (JP)
Inventor: TOMIUCHI SHINICHI
IPC: B28B1/52
Filed: 1984-07-25
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5678142-A (JP)
Title: Manufacture of semiconductor device
Inventor: SAKURAI JIYUNJI
IPC: H01L21/306
Filed: 1979-11-29
Abstract: PURPOSE:To enable the formation of a flat oxide film on an Si substrate, by a method wherein a mask, in which the thickness of the mask decreases outwardly, is used, and after a concavity is formed on the Si substrate by an isotropic etching and ions are implanted in a high density, the mask is removed to form an flat oxide film. CONSTITUTION:Ar ions implanted onto a whole surface of an SiO2 12 on a surface (100) of a P type Si substrate so that its surface part is of high density and its deep part is of low density. A resist mask 4 is applied for performing wet etching and forming tapered periphery 12A. An isotropic etching is performed on an Si 11 using SiO2 12 as a mask. When a concavity 14 is made except an element-forming region 11A, the periphery 12A forms an eaves. The resist 13 is then removed, and ions B are implanted utilysing the film 12 as a mask, to form a P type channel cut layer 15. As ions are implanted onto the layer 15 to form an uniform P<+> layer 16. As ions are implanted around the eave-formed mask 12A, thereby forming the layer 16 such that the sensity of the P<+> layer becomes lower gradually at the periphery 14A of the concavity. The mask 12 is removed and a wet oxidation is carried out, whereby mainly the P<+> layer 16 is oxidized, and area expansion, which is produced due to the oxidation at the periphery 14A, decreases gradually to obtain a flat SiO2 film 17.
Patent JP-H05344940-A (JP)
Title: Vacuum cleaner
Inventor: OKAMOTO MASAFUMI
IPC: A47L9/00
Filed: 1992-06-15
Abstract: PURPOSE:To provide a vacuum cleaner which can easily cross a doorshill, prevent the body and a step difference from being broken when crossing the doorshill, and lighten the shock applied to the body at the same time, thus improving usability and durability. CONSTITUTION:At the front of a body 20, a roller 33 is fixed in turnable manner on a shaft 34 through an arm 32, and the arm 32 is fixed in turnable manner by the bearing 35 of the body 20 and a shaft 36, in the upper part. A cushion type roller is provided so that the arm 32 is urged by a spring 37, and since the spring 37 is fixed by the boss 38 on the body side 20 and the boss 39 on the arm 32 side, the arm 32 turns within the limit of the extension and contraction of the spring 37, and the arm 32 is prevented from overturning forward.
Patent JP-H0445521-A (JP)
Title: Formation of semiconductor film
Inventor: NOGUCHI SHIGERU
IPC: H01L21/225
Filed: 1990-06-12
Abstract: PURPOSE:To eliminate such a problem as pollution, etc., by forming a semiconductor film while the inside of a vacuum holding container is maintained in a gaseous atmosphere containing at least one or more reactive gases for doping. CONSTITUTION:After a substrate 5 on which a semiconductor film is to be stuck is mounted on a substrate holder 4 in a vacuum holding container 1, the container 1 is evacuated to a vacuum. A mixed gas of Ar and He or H2 gas to be used for thermally spraying a jet-like plasma from a thermal spraying gas leading-in port upon the surface of the substrate 5 is led by l-10 SLM as the thermally spraying gas and, at the same time, a reactive gas for doping is led from a gas leading-in port 10. After confirming that the pressure inside the container 1 is stabilized, the plasma is generated from the thermally spraying gas 2 by means of a plasma generating power source 3 and the raw material for the semiconductor film is led from a raw material leading-in port 7.
Patent JP-S6215819-A (JP)
Title: Semiconductor device
Inventor: HIDAKA YOSHIHARU
IPC: H01L21/28
Filed: 1985-07-12
Abstract: PURPOSE:To prevent unevenness in resistance due to segregation of a minute metal wiring, yield of partial high resistance caused by said unevenness and wire breakdown, by laminating a metal thin film, which forms a metal wiring, on a single crystal semiconductor substrate through an amorphous semiconductor thin film layer. CONSTITUTION:On single crystal silicon 1, amorphous silicon 2 is grown to a thickness of about 2,000Angstrom  by a CVD method. High purity aluminum 3 is grown to a thickness of about 800Angstrom  on the silicon 2 by evaporation. Thereafter, sintering is performed for 30 minutes at 450 deg.C. As a result, a semiconductor device having a three-layer structure, in which the thin film layer of the amorphous silicon 2 and the thin film layer of the aluminum 3 are sequentially provided, is constituted. By providing the amorphous silicon in-between in this way, the diffusion of the silicon into the metal layer becomes uniform. As a result, the segragation of the silicon in the metal layer is hard to occur at the time of sintering. Thus breakdown in a minute wiring and the yield of high resistance can be overcome.
Patent JP-S5781034-A (JP)
Title: Detector for position of cassette of copier
Inventor: NAGAHARA YASUMORI
IPC: G03B27/00
Filed: 1980-11-05
Abstract: PURPOSE: To optically detect the set position of a cassette for copying, by securing a reflecting material of prescribed incident angle and reflection angle, in a prescribed position on the outside of the cassette and providing a light emitter and a light receiver which are so located that the directions from them to the reflecting material are oblique to both axes (x), (y).  
     CONSTITUTION: As a cassette 10 approaches its proper set position along an axis (y), light reflected on a reflecting material 11 increases gradually because the light emitted from a light emitter 14 proceeds in a direction oblique at an angle of θ to the axis (y). As a result, the proper set position in the direction of the axis (y) is detected. As the cassette 10 approaches its proper set position along another axis (x), the reflected light also increases gradually because the light emitted from the emitter 14 proceeds in a direction oblique at an angle of  180°-θ to the axis (x). As a result, the proper set position in the direction of  the axis (x) is detected. Since the light emitter 14 and a light receiver are provided so that the directions from them to the reflecting material 11 are oblique  to both the axes (x), (y), the proper set positions in the directions of both the  axes can be simultaneously detected. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H094963-A (JP)
Title: Low-temperature display case
Inventor: NAKAYAMA KOJI
IPC: F25D11/00
Filed: 1995-06-21
Abstract: PURPOSE: To uniformly humidify in a storage chamber by providing a cooler in a lower duct, drawing down a fog feed tube to its lower part in the back duct and providing a spray port at the lower end. CONSTITUTION: Humidified air humidified by fog from a humidifier 21 is discharged from a spray port 23 of the end via a fog feed tube 22 to the inner lower end of the duct 8 at the back of a storage chamber 7 toward the side. The part is diffused from the outlet 24 of a partition plate 3 into the chamber 7 while rising along the cold air flowing in the duct 8, and the residue is discharged into the chamber 7 from the discharge port 12 at the upper art of the opening 6. Thus, since the chamber 7 is humidified from the back and above, the entire area in the chamber 7 is substantially uniformly humidified, and the entire commodity displayed on a drainboard rack 33 of each rack 16 of each stage can be preserved with excellent freshness.
Patent JP-S5860604-A (JP)
Title: Synthesis of cubic boron nitride
Inventor: OGATA MASARU
IPC: B01J29/00
Filed: 1981-10-01
Abstract: PURPOSE:Prescribed high temperature and high pressure are made to act on high-purity hexagonal boron nitride of less oxygen content in the presence of a catalyst such as Si-Al to give cubic boron nitride (CBN) in high yield. CONSTITUTION:As a catalyst, is prepared Si and Al, Si and aluminum nitride, Li, Mg, Ca lithium nitride, magnesium nitride or calcium nitride. In the presence of a catalyst selected from the above compounds, high pressure and temperature of higher than 4,000 atmosheric one and higher than 1,200 deg.C are made to act on hexagonal boron nitride of less than 3,500ppm, preferably less than 1,000ppm  oxygen content to give CBN in high yield. The amount of the catalyst is 2- 15pts.wt. preferably 5pts.wt. per 100pts.wt. of HBN.
Patent JP-S5582711-A (JP)
Title: Method and apparatus for keeping heat of converter
Inventor: NOGUCHI KATSUHIRO
IPC: C21C5/42
Filed: 1978-12-18
Abstract: PURPOSE:To keep a converter hot economically with the sensible heat of molten slag, by inverting the converter when it is suspended, and by fitting the opening of the converter with a heat-keeping lid filled with molten slag. CONSTITUTION:In the short-time suspension of a converter 1 for the purpose of periodical repairment or of production adjustment, the converter 1 is inverted so as to direct the inlet 1a downward. A heat-keeping lid 7 filled with molten slag 13 is placed under the inlet 1a and is fitted to the inlet 1a tightly in order to heat the inside of the converter 1 with the sensible heat of the molten slag 13. The heat- keeping lid 7 is revolvably mounted on the top end of an arm 8 which revolves around the pin 11 of the bracket 10 of a traveling track 6. At the other end of the arm 8 is mounted a balance weight 12 of a weight corresponding to the total weight of the lid 7 and the molten slag 13. The arm on the balance weight side is pushed by a power cylinder 14 attached to the traveling track 6 in order to raise the revolving arm 8 around the pin 11, and to oscillate the arm 8 by a cylinder 15, hereby the heat-keeping lid 7 is fitted tightly to the inlet 1a of the converter 1.