baber/WOPTO huggingface dataset:
Patent TW-467823-B (TW)
Title: Biaxially oriented polyester film for magnetic recording medium
Inventor: OGAWA TATSUYA
IPC: C08J5/18
Filed: 1998-07-07
Granted: 2001-12-11
Abstract: A biaxially oriented polyester film for a magnetic recording medium, which comprises an aromatic polyester resin composition comprising: (A) an aromatic polyester, (B) silicone resin particles which can be obtained by polymerizing a silane compound containing trialkoxysilane in the presence of a surfactant and water, contain at least 80 wt% of recurring units and are substantially spherical, and (C) other inert fine particles. This biaxially oriented polyester film for a magnetic recording medium has an extremely small number of coarse protrusions and excellent winding property, abrasion resistance and traveling durability and can be produced at a low production cost.
Patent TW-491008-B (TW)
Title: Mount for a circuit board including a mounting bracket and receptor for bracket
Inventor: HARGY JOHN J III
IPC: H05K3/30
Filed: 1998-08-01
Granted: 2002-06-11
Abstract: A circuit board mount includes a mounting bracket having detent means thereupon and receiver means providing a recess for the acceptance of said detent means, the mounting bracket being securable to the chassis of a computer or similar electronic device and the receiver means being securable to the circuit board whereby the circuit board and bracket can be operatively connected to each other by robotic assembly means.
Patent TW-381343-B (TW)
Title: Method for preventing dielectric cracking of capacitors
Inventor: WU DE-YUAN
IPC: H01L27/108
Filed: 1998-08-04
Granted: 2000-02-01
Abstract: A kind of method for preventing dielectric cracking of capacitors which has the following steps: firstly, providing a semiconductor substrate on which formed a protruded stacked capacitor structure; then, forming the first dielectric on the stacked capacitors and semiconductor substrate with the material as BPSG, SOG or PSG; applying annealing process with the temperature range between 800-900 degree C; then, applying back etching process to etch the first dielectric and forming the spacer structure on sidewall of stacked capacitors wherein the spacer is the feature of the present invention which can cover the sharp corner at the bottom of stacked capacitor sidewall to prevent the dielectric cracking in following deposition; then, forming the second dielectric on the spacer and stacked capacitor with the material as silicon dioxide and with the forming method as plasma enhanced chemical vapor deposition.
Patent TW-401552-B (TW)
Title: System and method for editing data structure
Inventor: LIN GUANG-SHIN
IPC: G06F17/24
Filed: 1998-09-04
Granted: 2000-08-11
Abstract: The invention discloses a data structure editing system, which can instantly bundle the functions of the data structure while the user are proceeding the data structure operation of an application program, wherein the input device can send a message according to the user's command. Windows operating system then receives the said message and transmits it to a message queue so that the said message can be transmitted to the corresponding application program by the message queue. The application program to which the data structure belongs processes the message in the message queue pertaining to the data structure. In addition, a hook section can be used to intercept related data structure message on real time basis. And, an editing process section can screen the necessary message from the related data structure message intercepted by the hook section. The data base owns data corresponding to the needed message for query of the editing process section, and it will further proceed the editing or bundling function process toward the data structure in accordance with the process result of output.
Patent TW-393724-B (TW)
Title: A manufacturing method of shallow trench isolation
Inventor: GAU JING-HUNG
IPC: H01L21/762
Filed: 1998-09-19
Granted: 2000-06-11
Abstract: A manufacturing method of shallow trench isolation is to increase the sticky layer thickness. This new process solves the stress problem created by heat expansion. Furthermore, the shallow trench isolation is used thermal oxidation to form isolation layer, so its structure is more dense. Therefore, when uses HF to remove pad oxide, the etching rate of isolation layer is almost the same as pad oxide and without the problem of over etching led to edge dishing. On the other hand, there will not be any micro scratches on the surface of the oxide plug.
Patent TW-398003-B (TW)
Title: Electron tube comprising a semiconductor cathode
Inventor: GEHRING FREDERIK CHRISTIAAN
IPC: H01J9/385
Filed: 1998-10-29
Granted: 2000-07-11
Abstract: An electron tube provided with a semiconductor cathode for emitting electrons, which semiconductor cathode is arranged on a support, a source being arranged in the vicinity of the cathode, in particular, so as to face the free (Si) surface of the cathode, which source is capable of evolving, at the increased temperatures occurring during evacuation of the tube in the manufacturing process, a reducing agent such as F2 or HF, which passivates the free (Si) surface of the cathode.
Patent TW-419412-B (TW)
Title: Polishing system
Inventor: KONISHI NOBUO
IPC: B24B37/10
Filed: 1998-11-10
Granted: 2001-01-21
Abstract: A publishing system comprises: a rotating mounting table 14 which is rotatable while holding an object W to be polished; a rotating polishing plate 28 which has a small diameter than that of the rotating mounting table and which is provided with an abrasive layer 30 on the surface thereof; a scanning mechanism 26 for moving the rotating polishing plate in radial directions of the rotating mounting table while pressing the abrasive layer on the object; and abrasive solution supply means 46 for supplying an abrasive solution to the surface of the object. Thus, the system can be decreased in size, and the polished quantity can be partially controlled.
Patent TW-399335-B (TW)
Title: Bipolar junction transitor of two segment operation range of high, low  segment concentration
Inventor: TSAI JIUN-LIN
IPC: H01L29/36
Filed: 1999-01-15
Granted: 2000-07-21
Abstract: This is a bipolar junction transistor of two segment operation range of high, low base region concentration. This bipolar junction transistor is manufactured on a substrate. It forms a buried layer with N type doping concentration on the substrate. Then, it forms a base region on the buried layer, which is a N type doping region. On the base region, it forms a first base region, which has P type doping concentration. The doping concentration is low. Then, it forms a second base region, which has P type doping concentration, on the first base region. Doping concentration is high. Finally, it forms a base region, which has N type doping region, on the second base region. It completes a bipolar junction transistor with two base doping concentrations.
Patent TW-470977-B (TW)
Title: Electricity supply system
Inventor: LEIJON MATS
IPC: H01F27/32
Filed: 1999-01-14
Granted: 2002-01-01
Abstract: An electricity supply system for traction comprises at least one transformer, for example an autotransformer or current booster transformer, and/or a rotating convertor. The transformer or rotating convertor comprises a winding including insulation consisting of at least two semiconducting layers 32, 34, each providing a substantially equipotential surface, and solid insulation 33 between the semiconducting layers.
Patent TW-404025-B (TW)
Title: The process of mask ROM
Inventor: WU SHIE-LIN
IPC: H01L21/8246
Filed: 1999-02-10
Granted: 2000-09-01
Abstract: The mask ROM of this invention is formed on the semiconductor substrate, semiconductor substrate comprises the NMOS device region and the NMOS memory cell region. The mask ROM could comprises: the isolated structure between the NMOS device region and the NMOS memory cell region; gate oxide on the NMOS device region; programmable oxide on the NMOS memory cell region; main gate formed on the NMOS device region and the NMOS memory cell region respectively; sidewall gap on the sidewall of the main gate; the first doping region of the source/drain region on the bottom substrate under sidewall gap; the second  doping region of the source/drain region neighboring to the outside of the first doping region; the doping concentration of the second doping region is higher than the first doping region; and p-typed doping region is sited on the down region of the  programmable oxide neighboring to the surface of the bottom substrate.
Patent TW-434493-B (TW)
Title: Stroke-based glyph-outline font generation in low/high resolution space
Inventor: CHENG KUO-YOUNG
IPC: G06F40/00
Filed: 1999-02-10
Granted: 2001-05-16
Abstract: A method, computer system and computer-readable medium for generating an outline font of Asian language characters. The Asian language characters are defined by basic strokes. The basic strokes are identified by a plurality of key points and at least one width value. The computer system includes memory and a processor coupled at least one output device. The processor retrieves a set of basic stroke defined characters and identifies a set of similar glyphs in the retrieved set of characters. Each glyph includes a set of basic strokes. The processor selects topographically representative glyphs from each identified set of similar glyphs, determines the intersecting points of the plurality of overlapping basic strokes for each selected glyph, generates outline data for each selected glyph according to the determined intersecting points and stores the generated outline data in memory. The processor also renders a character selected for display on an output device according to the stored generated outline data.
Patent TW-382053-B (TW)
Title: Liquid fuel and water injection purge systems for a gas turbine
Inventor: TRAVER ROBERT SCOTT
IPC: F02C7/232
Filed: 1999-03-24
Granted: 2000-02-11
Abstract: A purge system is disclosed for flushing liquid fuel and water from the combustion section of a gas turbine system as well as for providing continuous cooling of the nozzles. The gas turbine may operate on liquid fuel or gaseous fuel. When the turbine is switched to burn gaseous fuel, the liquid fuel remaining in the liquid fuel system is flushed by a liquid fuel purge system. Similarly, water in the water injection system is purged from nozzles in the combustion system by a water purge system. The purge system operates in conjunction with an air atomization system, but does not rely on an atomizing air compressor to boost the pressure of the purge air. Instead, the purge system utilizes pressurized air from the gas turbine compressor and directs the purge air to manifolds which distribute air to the atomizing air passages, liquid fuel nozzles, and water injection nozzles via purge valves and soft purge valves.
Patent TW-431953-B (TW)
Title: Multifunctional pocket tool including pliers
Inventor: CACHOT MAURICE
IPC: B25B7/22
Filed: 1999-05-10
Granted: 2001-05-01
Abstract: A multifunctional pliers-knife (1) has two lateral sidepieces (10, 11) serving as a handle for the tool, a plurality of tools disposed between the sidepieces, and a pair of pliers having a first jaw (18) fixed integrally to the lateral sidepieces and a second jaw (14) capable of pivoting relative to the first jaw about a transverse spindle (40) at the front end of the tool. Means for locking the pliers in closed position include at least one locking element (4) disposed near this front end and capable of being moved in a plane parallel to the sidepieces between a position locking the pliers in closed position and a position permitting the pliers to be opened. The locking element has the advantage of being easily manipulated with the thumb of the hand holding the pliers-knife and is of sturdy construction.
Patent TW-417145-B (TW)
Title: Highly effective voltage pumping circuit
Inventor: MOON BYUNG-SICK
IPC: H02M3/07
Filed: 1999-06-03
Granted: 2001-01-01
Abstract: A highly effective voltage pumping circuit is provided. The voltage pumping circuit includes a pulse generator for generating a pulse signal in response to a control signal input from the outside, a first voltage pumping unit for generating a first high voltage of a predetermined level in response to the control signal and the pulse signal, a second voltage pumping unit for generating a second high voltage of the same level as the first high voltage in response to the control signal and the pulse signal, and a voltage transmitting unit for inputting the first high voltage and outputting the first high voltage when the second high voltage is applied. It is possible to obtain a high voltage without the loss of a voltage due to the threshold voltage of an NMOS transistor.
Patent TW-533181-B (TW)
Title: Winding equipment and winding method for elastic yarn
Inventor: CHOI YOUNG HO
IPC: B65H54/02
Filed: 1999-06-24
Granted: 2003-05-21
Abstract: The present invention relates to winding equipment and a winding method for elastic yarn. The equipment of the present invention comprises: (1) elastic yarn discharge portion which the airflow generated by the rotation of the empty bobbin is utilized which the empty bobbin must be kept a certain distance from an contact roller to prevent from being disturbed and interfered by airflow generated, the elastic yarns from the transversely moving yarn leaving portion and yarn entering portion are entangled together in order to wind the elastic yarn from a yarn leaving portion around the empty bobbin and gathered in the upward direction, and the elastic yarn is transversely moved to be discharged on the empty bobbin by the transversely moving machine for properly guiding and winding the elastic yarn; (2) turning portion which is for securely retaining the bobbin and is provided with at least two bobbin racks capable of turning around; (3) control portion which makes the turning portion to turn around and guides and winds the elastic yarn to the empty bobbin when the bobbin on the turning portion becomes a full bobbin by the elastic yarn discharged from the elastic yarn discharge portion. The elastic yarn winding equipment comprising the above portions also includes an elastic yarn guiding portion, which a rack capable of turning in a certain angular range is provided on the turning portion and a plate is mounted to the rack. Although the plate can be turned in a certain angular range, the airflow generated by the rotation of the empty bobbin is concentrated in the upward direction since the configuration of the plate is often semi-circular. Utilizing the airflow to wind the elastic yarn from the yarn leaving portion of the empty bobbin around the empty bobbin constitutes the winding equipment and winding method for elastic yarn featured with the elastic yarn guiding portion.
Patent TW-434939-B (TW)
Title: Swivel antenna with parasitic tuning
Inventor: HAYES GERARD JAMES
IPC: H01Q3/04
Filed: 1999-07-02
Granted: 2001-05-16
Abstract: A radiotelephone antenna system includes a parasitic tuning element disposed on a radiotelephone housing so as to be located adjacent a swivel antenna when the antenna is in a stored position. When in a stored position, the antenna overlies at least a portion of the parasitic tuning element. The parasitic tuning element is coupled to the swivel antenna to tune the swivel antenna to a first frequency band and to match an impedance of the antenna with an impedance of the radiotelephone transceiver. Accordingly, a radiotelephone can operate satisfactorily even when a swivel antenna is in a stored position.
Patent TW-517110-B (TW)
Title: Panel made of a highly insulated electrothermal fabric
Inventor: STABILE ALDO
IPC: F24D13/02
Filed: 1999-07-02
Granted: 2003-01-11
Abstract: Panel (10) for generating and diffusing heat obtained from a heat-radiating board (30) comprising one or more pieces of electrothermal fabric with strips of fibreglass laid side by side to form the warp, the weft (50) consisting of a continuous copper wire (51), small in diameter and of considerable length, coated with insulating material, that extends serpentinewise passing alternatively above and below the strips of fibreglass, said board (30) being completed by intermediate and external layers (35, 36) of epoxidic thermoadhesive material and clad on both surfaces with sheets of micanite (31, 32), so that on connecting the ends of the wire (51) forming the weft (50) to a source of electric current, boring holes (65, 66) using means, that may be a laser beam, on the thermoadhesive layer (35, 36) covering the weft (50), this latter converts electric energy into thermal energy.
Patent TW-487848-B (TW)
Title: Desktop liquid crystal display computer
Inventor: SUN MING-SHEN
IPC: G06F3/02
Filed: 1999-07-22
Granted: 2002-05-21
Abstract: The present invention provides a desktop liquid crystal display computer, which comprises a computer chassis, a lower cover mask and a keyboard, wherein the front face of the computer chassis is configured with a liquid crystal display panel, and with a motherboard therein for electrical connection with the liquid crystal display panel; the lower cover mask is pivoted with the lower end of the computer chassis, which can be pivoted between a first position and a second position; the keyboard is fixed on the lower cover mask, and when the lower cover mask is at the first location, it can be used to input data by the user, so that it can reduce the desk space occupied by the liquid crystal display computer, being convenient for short distance movement, and protecting the screen of the liquid crystal display computer.
Patent TW-448375-B (TW)
Title: Data structure and operations for time-varying variable in an enterprise model
Inventor: JOSLIN DAVID E
IPC: G06Q10/00
Filed: 1999-10-19
Granted: 2001-08-01
Abstract: A method of using a binary tree data structure to represent a time-varying variable, and to solve queries about the variable. The tree is especially useful for solving ""find"" type queries, such as ""where is the earliest/latest time when a minimum of y units are on hand?"" this type of query can be solved with a efficiency of 0(log n), where n is the number of nodes of the tree.
Patent TW-434779-B (TW)
Title: Rotating clamp head used in a process chamber
Inventor: LIU YU-TSAI
IPC: H01L21/68
Filed: 1999-10-28
Granted: 2001-05-16
Abstract: A rotating clamp head is used in a process chamber for clamping and rotating a substrate to provide a large adjustment range of angular speed and angular acceleration speed, thereby providing a vibration effect of abrupt acceleration and deceleration for the substrate to be processed so as to fill the predefined processing material into the trenched pattern of the substrate in a limited time. In addition, by enlarging the maximum angular speed and angular acceleration speed, the processing material filled in the trenched pattern is thrown away quickly. Furthermore, the present rotating clamp head is also provided with a function of cleaning the lower surface of the substrate (such as a wafer or a flat glass).
Patent TW-439191-B (TW)
Title: Fabrication method of shallow trench isolation region
Inventor: LUO JI-JIN
IPC: H01L21/76
Filed: 1999-12-28
Granted: 2001-06-07
Abstract: A fabrication method of shallow trench isolation region comprises forming a trench on the substrate; covering a silicon nitride buffer layer on the silicon oxide filling layer above the trench after forming a silicon oxide filling layer; then, implanting boron into the silicon oxide filling layer, so as to increase the polishing removal speed of the silicon oxide filling layer in the subsequent chemical-mechanical polishing process by implanting boron. The silicon oxide filling layer will have a significant polishing selectivity with respect to the silicon nitride buffer layer, whereby the silicon nitride buffer layer is polished and removed later, so that the purpose of protecting the silicon oxide filling layer above the trench and avoiding the dishing effect after the chemical-mechanical polishing is accomplished.
Patent TW-434793-B (TW)
Title: Process for producing shallow trench isolation of integrated circuit
Inventor: JENG JIUN-YI
IPC: H01L21/76
Filed: 2000-01-11
Granted: 2001-05-16
Abstract: The present invention discloses a process for producing a shallow trench isolation of an integrated circuit, which comprises sequentially forming a pad oxide layer, a silicon nitride layer and a SiON layer on a substrate; etching to define a plurality of shallow trenches; using a two-stage in-situ steam generation (ISSG) wet oxidation technique to completely oxidize the SiON layer; depositing silicon oxide to fill up the shallow trenches and performing a planarization process; removing the silicon nitride layer and the pad oxide layer to complete the production of the shallow trench isolation of an integrated circuit; in which a pull-backed process of the silicon nitride layer is performed prior to the ISSG oxidation step to help forming a shallow trench isolation region with a very large corner curvature radius in the active device region, thereby avoiding the kink effect of the shallow trenches.
Patent TW-526461-B (TW)
Title: Automatic adjusting device for common voltage of liquid crystal display
Inventor: CHEN YEN-CHEN
IPC: G09G3/36
Filed: 2000-01-24
Granted: 2003-04-01
Abstract: There is provided an automatic adjusting device for common voltage of liquid crystal display, which is used to adjust the common voltage of the pixel unit in the pixel array of the liquid crystal display. The automatic adjusting device for common voltage includes: a transistor; a scanning line electrically connected to the gate of the transistor for turning the transistor on or off; a data line electrically connected to the drain of the transistor and having a voltage maintained at an average of a data maximum voltage and a data minimum voltage, wherein the data maximum voltage and the data minimum voltage are the maximum and minimum voltage values provided to the data signal of the pixel array, respectively; a capacitor set formed by a liquid crystal capacitor and a hold capacitor connected in parallel, and having a terminal connected to the common voltage of the pixel unit circuit of the pixel array and the other terminal connected to the source of the transistor; and a buffer having an input terminal electrically connected to the source of the transistor and an output terminal providing a voltage for use as the common voltage of the pixel unit circuit of the pixel array, wherein the circuit formed by the transistor, the data line, the capacitor set and the scanning lines is formed by the same manufacturing steps as the pixel unit circuit of the pixel array, and the corresponding components are the same.
Patent TW-445563-B (TW)
Title: Method and system of measuring waviness in silicon wafers
Inventor: WITTE DALE ANDREW
IPC: H01L21/66
Filed: 2000-03-01
Granted: 2001-07-11
Abstract: A method and system of measuring waviness of a silicon wafer. A memory stores data representative of the shape of the wafer at a plurality of positions on the wafer and a processor processes the data to determine a waviness parameter. The processor defines an inspection surface as a function of the data and calculates deviations between the inspection surface and a first reference plane at a plurality of positions on the inspection surface. The processor further defines a plurality of localized sites on the wafer and calculates deviations between the inspection surface and a second reference plane at a plurality of positions on the inspection surface for each site. The second reference plane is a function of the calculated deviations between the inspection surface for each site and the first reference plane. The processor then defines a waviness parameter for each site as a maximum variance of the calculated deviations between he inspection surface and the second reference plane.