baber/WOPTO huggingface dataset:
Patent TW-376638-B (TW)
Title: Pixel adaptive noise reduction filter for digital video
Inventor: WU SIU-WAI
IPC: H04N5/21
Filed: 1998-04-28
Granted: 1999-12-11
Abstract: A current pixel of a video image is adaptively filtered to provide stronger filtering when there is a high likelihood that noise is present. Weaker filtering is provided when the presence of a color and/or brightness edge is likely in the video image. Each pixel has luminance and chrominance amplitude values. In a filtering method, a current pixel is intermediate to first and second pixels in the video frame. Difference signals are determined based on the amplitude difference between the current pixel and first and second adjacent pixels. A plurality of available filters provide successively stronger filtering of the current pixel amplitude. One of the filters is selected for filtering the current pixel according to the difference signals. Secondary difference signals which indicate the amplitude difference between the current pixel and pixels which are adjacent to the first and second pixels are also considered in the selection process. The selection process may further be biased by a user-selectable control word. The scheme may also provide temporal filtering with successive video frames or images. Filtering with pixel interpolation may also be used.
Patent TW-483748-B (TW)
Title: Device for supporting dental floss
Inventor: SHEN JUNG-SHAN
IPC: A61C15/04
Filed: 1998-05-20
Granted: 2002-04-21
Abstract: The present invention provides a device for supporting a dental floss, which comprises a holding part, a dental floss support component, and an adjustment component; in which, the dental floss support component comprises a left support arm and a right support arm separately mounted in the pivotal groove of the holding part. The adjustment component is screwed at the front part of the holding part, and is movable axially corresponding to the holding part. The adjustment component can touch the left and right curvature parts of the left and right support arms. A dental floss is separately woven with a knot at both ends of a thread in order to latch the left and right hook parts on the front end of the left and right support arms. A rotation of the adjustment component enables a simultaneous inward shrinking of the left and right curvature parts while enables an outward swinging of the left and right hook parts, thereby tightly supporting the dental floss in order to form an approximately orthogonal crossing between the dental floss and the dental floss bar. The dental floss support device according to the present invention enables an easier cleaning of the crevice between teeth. Meanwhile, the dental floss can be replaced while using the invented device at appropriate time. Therefore, the invented device not only has an economical benefit, but also has an environmental beneficial effect.
Patent TW-533338-B (TW)
Title: Photoresist composition
Inventor: YAKO YUKO
IPC: G03F7/039
Filed: 1998-05-22
Granted: 2003-05-21
Abstract: A chemical amplifying type positive photoresist composition, excellent in various properties such as film retention ratio, applicability, heat resistance, sensitivity, resolution, profile and time delay resistance, and not easily affected by environment, which comprises (A) a resin which is converted to alkali-soluble by the action of an acid, (B) an acid generator and (C) a tertiary amine compound having an ether bond; and a fine photoresist pattern can be formed in high precision using the photoresist composition.
Patent TW-482833-B (TW)
Title: Single crystal SiC and a method of producing the same
Inventor: TANINO KICHIYA
IPC: C30B1/02
Filed: 1998-07-07
Granted: 2002-04-11
Abstract: According to the invention, a complex (M) which is formed by stacking a polycrystalline β-SiC plate (2) on the surface of a single crystal Α-SiC base material (1) in a close con-tact state via a polished face or grown in a layer-like manner by the thermal CVD method is heat-treated in a temperature range of 1,850 to 2,400 DEG C, whereby polycrystals of the poly-crystalline cubic β-SiC plate (2) are transformed into a single crystal, and the single crystal oriented in the same direction as the crystal axis of the single crystal Α-SiC base material (1) is grown. As a result, large single crystal SiC of high quality which is free from micropipe defects, lattice defects, generation of grain boundaries due to intrusion of impurities, and the like can be produced easily and efficiently.
Patent TW-452719-B (TW)
Title: Mobile terminal, location measurement device, system using the same and location measurement method for mobile terminal
Inventor: KAMISHIMA HIROAKI
IPC: H04W92/18
Filed: 1998-07-15
Granted: 2001-09-01
Abstract: A person to determine a location carries a location measurement device 16 and moves in the vicinity of a mobile terminal 17. Then the device 16 uses a channel #1 of a conventional PHS to output a request to the mobile terminal 17 to select a transceiver mode. In the transceiver mode, direct communication is made between the location measurement device 16 and the mobile terminal 17 (#2). The location of the mobile terminal 17 is determined by measuring the strength of a radio wave in this communication.
Patent TW-370467-B (TW)
Title: Multipurpose thigh/hip/abdominal exercise device
Inventor: GVOICH NED
IPC: A63B23/02
Filed: 1998-07-24
Granted: 1999-09-21
Abstract: A multipurpose exercise device comprises a pair of side members each having a concave surface adapted to engage one of the thighs of a user. Each of the side members is supported in sliding engagement by a corresponding frame and operatively attached to a resilient member that urges the side member toward the open side of the concave surface. The frames can be fixed in various orientations. In one orientation of the frames, the side members face each other with the concave surfaces both opening inward. The user's legs are placed between the side members and moved apart against the urging of the resilient members to exercise the thigh abductor muscles. In another orientation, the frames are oriented so that the side member face away from each other with the concave surfaces both opening outward. The device is placed between the user's legs and the user moves his/her legs together against the urging of the resilient members to exercise the thigh adductor muscles. In yet another orientation, the frames are oriented so that the side members are parallel and facing the same direction. The device in this configuration may be laid over the user's thighs with one side member resting on each thigh. A hip flexor exercise may be performed by lifting one leg at a time against the corresponding side member or the muscles of the abdomen may be exercised by bending forward to move the frame against the side members.
Patent TW-514685-B (TW)
Title: Single crystal SiC and a method of producing the same
Inventor: TANINO KICHIYA
IPC: C30B33/02
Filed: 1998-08-07
Granted: 2002-12-21
Abstract: A complex (M) which is formed by growing a polycrystalline β-SiC plate 4 by the thermal CVD method on crystal orientation faces which are unified in one direction of plural plate-like single crystal Α-SiC pieces 2 that are stacked and closely contacted is subjected to a heat treatment at a temperature in the range of 1,850 to 2,400 DEG C, whereby a single crystal which is oriented in the same direction as the crystal axes of the single crystal Α-SiC pieces 2 is grown from the crystal orientation faces of the single crystal Α-SiC pieces toward the polycrystalline β-SiC plate 4. As a result, single crystal SiC of a high quality in which crystalline nuclei, impurities, micropipe defects, and the like are not substantially generated in an interface can be produced easily and efficiently.
Patent TW-393433-B (TW)
Title: Electric device for moving shelves
Inventor: MIYAZAKI KUNIO
IPC: B65G1/10
Filed: 1999-03-03
Granted: 2000-06-11
Abstract: This invention provides an electric device for moving shelves. It is capable of assisting the technicians in maintaining the movable shelves by remote control, and thus can resolve malfunctions or any other abnormal conditions from a remote location. Using electromotive force to move shelves 32, and controlled by the input of command signal, it will create a necessary space for taking-out and placing-in of articles by means of electromotive moving device 3 installed the control mode. This device features to handle the monitor device 5,6 in according with the control situation of moving shelves in the control mode, through the phone line from far distance. It is better to install the monitor devices on the side of the electromotive moving shelves 3. The control situation also includes trouble information.
Patent TW-436621-B (TW)
Title: Method for detecting impurities in photolithographic materials
Inventor: JANG HUEI-AN
IPC: G01N1/40
Filed: 1999-06-25
Granted: 2001-05-28
Abstract: The present invention discloses a method for detecting impurities in photolithographic materials, which at least comprises: separating metal from a photolithographic material by a microwave heating; dissolving the metal in an acid to form a solution; and using an instrument to analyze the solution to obtain the metal content.
Patent TW-423101-B (TW)
Title: Method of producing bottle-shaped deep trench
Inventor: LIN MING-HUNG
IPC: H01L21/76
Filed: 1999-08-17
Granted: 2001-02-21
Abstract: A method of producing a bottle-shaped deep trench is applicable on a semiconductor substrate, and comprises: performing a first etching stage, which uses a plasma gas composition of nitrogen fluoride, hydrogen bromide and a premixed helium/oxygen, at a specified pressure and a specified flowrate of the nitrogen fluoride, hydrogen bromide and premixed helium/oxygen, to etch a semiconductor substrate thereby forming a neck-portion profile; performing a second etching stage by increasing the flowrate of the nitrogen fluoride and the hydrogen bromide and adjusting the specified flow ratio between the hydrogen bromide and the premixed helium/oxygen to over about 4:1, to etch the semiconductor substrate below the neck-portion profile to form a bottom profile; and performing a third etching stage by increasing the flowrate of the hydrogen bromide and reducing the specified pressure, to etch the semiconductor substrate surround the bottom profile in order to form a bottle-shaped deep trench. Therefore, the depth and width of the bottle-shaped deep trench can be increased and the surface area of the bottle-shaped deep trench can be increased.
Patent TW-I225075-B (TW)
Title: Process for the reprocessing respectively purification of aqueous solutions of a tertiary amine oxide
Inventor: JOHANN MANNER
IPC: D01F13/02
Filed: 1999-09-13
Granted: 2004-12-11
Abstract: The invention relates to a process for the reprocessing respectively purification of aqueous solutions of a tertiary amine oxide, particularly of process waters, e.g. used precipitation baths, which occur during the production of cellulosic moulded bodies, comprising the separation of turbidifying agents and solid impurities from the solution. The process in accordance with the invention is characterised in that the turbidifying agents and impurities are at least partly separated by means of a flotation process.
Patent TW-443044-B (TW)
Title: Method and configuration for transmitting data at low voltage system
Inventor: BRANDT FRANK
IPC: H04W28/18
Filed: 1999-11-10
Granted: 2001-06-23
Abstract: The invention relates to a method for transmitting data in two-way communication over low-voltage networks which are provided with or without coupling to a higher-order telecommunications, voice or data network. The transmission in the low-voltage network is carried out in a high frequency range greater than 148.5 kHz with a band spread of the data signals and a transmission level less than the radio and line disturbance voltage limits to be applied to the method. The signals which are distributed in the frequency and/or time range and which are provided for guaranteeing a multi-channel structure with different sequences of one or more families of numeric values are provided with a directional coding, frequency assignment or time slot assignment in order to give a receiver-specific logical direction in the low-voltage network. The binary data sequences which are channel-specifically distributed in this manner and which are characterized in a directional-specific manner are identified, regenerated, and evaluated with a new directional identification for routing the signals in the low-voltage network according to the degree of attenuation. This is carried out with the assistance of the given sequences by means of correlation, iterative or parallel disturbance signal suppression methods or by means of time/frequency transformation.
Patent TW-I253445-B (TW)
Title: Benzoylcyclohexanediones, process for their preparation and their use as herbicides and plant growth regulators
Inventor: VAN ALMSICK ANDREAS
IPC: C07D261/04
Filed: 1999-10-07
Granted: 2006-04-21
Abstract: Benzoylcyclohexanediones of the formula (I), process for their preparation and their use as herbicides and plant growth regulators are described. In this formula (I), R1, R2, R3, R4, R5, R6 and R7 are various radicals, L is an alkylene chain, and Y and Z are a monoatomic bridge element.
Patent TW-437088-B (TW)
Title: Manufacturing method of metal oxide semiconductor transistor
Inventor: WU CUUNG-CHENG
IPC: H01L29/772
Filed: 1999-10-18
Granted: 2001-05-28
Abstract: The present invention provides a manufacturing method of metal oxide semiconductor transistor which includes the following steps: firstly, conducting a thermal oxidation process to form a thermal oxide on the polysilicon gate and the exposed semiconductor substrate surface and increasing the thickness at the edge of the gate oxide; then, back etching the thermal oxide to remove the thermal oxide formed on the semiconductor substrate surface; next, applying an ion implantation process to form the shallow doping area on both sides of the channel area; then, forming the spacer on the sidewall of the polysilicon gate and again applying the ion implantation process to form the heavy doping area which is partly overlapped with the shallow doping area and forming the source/drain. According to the manufacturing method of the present invention, not only the gate induced drain current leakage is reduced, but also the straggling effect is prevented during the ion implantation so as to avoid the occurrence of punch through leakage.
Patent TW-452803-B (TW)
Title: Method and device for treating waste containing boron
Inventor: TOYOHARA NAOMI
IPC: G21F9/16
Filed: 2000-01-21
Granted: 2001-09-01
Abstract: The present invention provides a method and a device for treating a waste containing boron, which can prevent a waste liquid management from clogging, increase the supply of a waste liquid flowing to a dryer, adopt an in-barrel mixing method, and increase the strength of a cement solidified body. The method comprises adding a compound of alkali metal elements and that of an alkaline earth metal element to a liquid waste containing boron; drying and powdering a mixture of them; during the time of adding one of the above mentioned compound of alkali metal elements or that of an alkaline earth metal element and the time of drying the mixture, maintaining the liquid waste containing boron at a temperature higher than a temperature that can crystallize the compound of alkali metal elements and that of an alkaline earth metal element.
Patent TW-I241168-B (TW)
Title: Adduct having an acidic solution of sparingly-soluble group IIA complexes
Inventor: KEMP MAURICE C
IPC: A61K33/06
Filed: 2000-02-15
Granted: 2005-10-11
Abstract: An adduct that has an acidic solution of sparingly-soluble group IIA complexes (""AGIIS"") and at least one additive. The AGIIS can be prepared by mixing a mineral acid (such as sulfuric acid), and a group IIA hydroxide (such as calcium hydroxide) or a group IIA salt of a dibasic acid (such as calcium sulfate), or a mixture of the two group IIA compounds, followed by removing the solid formed. The additives can be an alcohol, an organic acid or a surface active agent. The composition has various uses, including cleaning, food production, decontamination, bioremediation, agricultural application, medical application, and detoxification of substances.
Patent TW-I240636-B (TW)
Title: Spontaneously dispersible pharmaceutical containing n-benzoyl-staurosporine and the use thereof
Inventor: MATTHEWS GRAHAM PAUL
IPC: A61P9/10
Filed: 2000-03-13
Granted: 2005-10-01
Abstract: Spontaneously dispersible N-benzoyl-staurosporine compositions are discussed for oral administration having high bioavailability levels and reduced variability of bioavailability levels of N-benzoyl-staurosporine, as well as their preparation and use in medical treatment.
Patent TW-I289454-B (TW)
Title: Pegylated interferon alfa combination HIV therapy
Inventor: LAUGHLIN MARK A
IPC: A61K47/48
Filed: 2000-05-02
Granted: 2007-11-11
Abstract: The use of a pegylated interferon-alfa and a CCR5 antagonist, further in association with at least one of ribavirin, IL-2, IL-12, pentafuside alone or in combination with an anti-HIV-1 drug therapy, e.g., HAART, for preparation of a medicament for the treatment of HIV-1 infections as well as HIV-1 infections as well as HIV-1 and HCV co-infections in treatment-naive as well as treatment-experienced adult and pediatric patients are disclosed.
Patent TW-476639-B (TW)
Title: Absorbent article, rheological stable skin care composition, and process for applying a skin care composition to at least a portion of a substrate
Inventor: GATTO JOSEPH ANTHONY
IPC: A61F13/49
Filed: 2000-05-20
Granted: 2002-02-21
Abstract: The present invention relates to an absorbent article having a stable skin care composition disposed on its skin-contacting surface. The skin care composition is readily transferable to the skin via normal contact, wearer motion, and/or body heat. Importantly, the skin care composition contains at least one skin care ingredient imparting visible skin benefits to the skin upon transfer to the skin and at least one rheological agent for stabilizing the composition such that agglomeration, stratification and/or settling of the composition are minimized. The present invention also relates to a process for making the absorbent articles having a stable skin care composition disposed thereon.
Patent TW-451412-B (TW)
Title: Manufacturing method for metal interconnection preventing the formation of void
Inventor: HUNG MENG-CHI
IPC: H01L21/768
Filed: 2000-06-19
Granted: 2001-08-21
Abstract: A manufacturing method for metal interconnection on the semiconductor substrate which includes the following steps: first, forming the metal layer on the semiconductor substrate and conducting lithography process on the metal layer to define the interconnection pattern in the metal layer; next, conducting plasma processing on the metal layer to reduce the probability of the formation of void, in which the plasma processing is under N2O gas environment with flow rate at 800 to 1600 sccm and with RF power at about 100 to 300 W for 30 to 90 seconds; then, conducting high density plasma (HDP) deposition process to form the inter-metal dielectric (IMD) on the semiconductor substrate and the metal layer.
Patent TW-449939-B (TW)
Title: Photodiode structure
Inventor: PAN RUEI-SHIANG
IPC: H01L27/146
Filed: 2000-07-03
Granted: 2001-08-11
Abstract: A photodiode structure comprises a first type doping substrate, a second type heavily doping area, a virtual isolation layer, a first type heavily doping area and an isolation layer, in which the second type heavily doping area is located in the first type doping substrate and the doping density of the second type heavily doping area is larger than that of the first type doping substrate. The virtual isolation layer is located outside the second type heavily doping area. The first type heavily doping area is located in the first type doping substrate outside the virtual isolation layer and the doping density of the first type heavily doping area is larger than the first type doping substrate. The isolation layer is located outside the first type heavily doping area and the width of the isolation layer is far larger than the virtual isolation layer.
Patent TW-495678-B (TW)
Title: Relaxed quorum determination for a quorum based operation
Inventor: BRISKEY KENNETH C
IPC: G06F9/46
Filed: 2000-07-26
Granted: 2002-07-21
Abstract: Dynamic reconfiguration of a quorum group of processors and recovery procedure therefore are provided for a shared nothing distributed computing system. Dynamic reconfiguration proceeds notwithstanding unavailability of at least one processor of the quorum group of processors assuming that a quorum of the remaining processors exists. Recovery processing is implementing by the group of processors so that the at least one processor which was unavailable during the dynamic reconfiguration of the group is able to obtain current state information once becoming active. Each processor of the group of processors includes an incarnation number and a list of member processors which participated in a commit process resulting in its incarnation number. The recovery processing includes exchanging the processors' incarnation numbers and lists of processors for propagation of the current state of the quorum group of processors to the at least one processor now becoming available. Determination of a relaxed quorum number for a quorum based operation of a distributed computing system is also described.
Patent TW-460952-B (TW)
Title: Gate fabrication method
Inventor: CHEN HORNG-NAN
IPC: H01L21/28
Filed: 2000-08-11
Granted: 2001-10-21
Abstract: The present invention provides a method for manufacturing gates on a silicon substrate of a silicon substrate to avoid unstable device characteristics caused by the narrow spacer width. The method comprises sequentially forming a dielectric layer, a conductive layer and a photoresist layer and then proceeding a lithography process to define the gate pattern; by using the photoresist layer as a hard mask, executing a etching process to remove the photoresist-uncovered conductive layer and dielectric layer and in-situ etch a predefined depth of the silicon substrate; and finally removing the photoresist layer and completing the gate process.
Patent TW-457582-B (TW)
Title: Etching method and plasma processing method
Inventor: HAGIHARA MASAAKI
IPC: H01L21/3213
Filed: 2000-08-25
Granted: 2001-10-01
Abstract: The processing gas which contains CH2F2, O2, and Ar is induced into a processing chamber 102 of a plasma processing apparatus 100. The float rate ratio of the processing gas is set at a level of CH2F2/O2/Ar = 20 sccm/10 sccm/100 sccm. Moreover, pressure in the processing chamber 102 is set at a level of 50 mTorr. The high frequency having a frequency of 13.65 MHz and a power level of 500 W is applied to a lower electrode 108 on which wafer W is set. The processing gas is raised to plasma therein and SiNx layer 206 which is formed on Cu layer 204 is etched. Exposed Cu layer 204 is hardly oxidized and neither C nor F are driven.