baber/WOPTO huggingface dataset:
Patent JP-S6159624-A (JP)
Title: Magnetic recording medium
Inventor: MORIOKA AKIRA
IPC: G11B5/706
Filed: 1984-08-29
Abstract: PURPOSE:To obtain a magnetic recording medium which satisfies both light transmittance and surface smoothness by forming a layer contg. CrO2 magnetic powder having a specific surface area of specific value or above and carbon black having a volatile component of specific ratio or above on a nonmagnetic base and laminating a layer contg. iron oxide magnetic powder having a specific surface area of specific value or above. CONSTITUTION:The 1st magnetic layer contg. the CrO2 magnetic powder having >=30m<2>/g specific surface area by an N2 adsorption method and the carbon black contg. >=3wt% oxygen-contg. component such as COOH, quinone and phenol as the volatile component and having about 10-10mmu particle size at 1-10wt% by the weight of the CrO2 powder is formed on the nonmagnetic base and thereafter the 2nd magnetic layer contg. the iron oxide magnetic powder of gamma-Fe2O3 having >=30m<2>/g specific surface area by the N2 adsorption method is laminated thereon to manufacture the magnetic recording medium. The magnetic tape which has the low light transmittance of the magnetic layer, permits the exact detection of the tape end, has the excellent surface smooth ness, electromagnetic conversion characteristic, etc. and is suitable for a video, etc. is thus obtd.
Patent JP-S5881757-A (JP)
Title: Preparation of extract of mushroom
Inventor: TOMINAGA TETSUHIKO
IPC: A23L27/10
Filed: 1981-11-10
Abstract: PURPOSE:To extract the essence of mushroom at the maximum without damaging the nutritive value of mushroom, by subjecting root, rhizome, etc. of mushroom to multi-stage extraction. CONSTITUTION:Root and rhizome of mushroom, mushroom exceeding the limit, etc. are homogenized under heating in a hot aqueous solution of citric acid, vitamin C, sucrose fatty acid and/or sorbitan fatty acid ester under heating to give the first extracted solution, the residue is heated in an aqueous solution containing a metal chelating agent such as sodium citrate, etc. to give the second extracted solution, the residue is heated in a solution of salt in a pH of 8-9 to give the third extracted solution, the residue is subjected to dissolution treatment with an exoenzyme produced from Basidiomycetes to give the fourth extracted solution, and the extracted soulutions obtained each of the processes are concentrated. If necessary, the metal chelating agent is added to the aqueous solution containing citric acid, and the first and the second extraction processes may be carried out by the first stage.
Patent JP-H0465815-A (JP)
Title: Formation of pattern
Inventor: KONDO SHIGEO
IPC: G03F1/68
Filed: 1990-07-06
Abstract: PURPOSE:To form various kinds of patterns without using any organic photoresist and organic solvent in the least by providing a photosensitive inorganic semiconductor on a semiconductor substrate and bringing the organic semiconductor into contact with an electrolyte so as to emit light having energy stronger than the band gap of the inorganic semiconductor. CONSTITUTION:After a gold layer 2 is formed on an insulating substrate 1 as a conductive metallic layer and a p-type silicon layer 3 is deposited on the layer 2, a tungsten oxide layer is formed as one of the n-type semiconductor layers 9 made of a photosensitive material. Then the substrate 1 is dipped in an electrolyte 11 and the semiconductor 9 is irradiated with ultraviolet rays by using a photomask 10. As a result, the part irradiated with the ultraviolet rays is removed and the p-type silicon film 3 is exposed. An n-type silicon layer 4 is formed to a desired shape by depositing the layer 4 and removing the remaining n-type photosensitive semiconductor layer 9. After another n-type photosensitive semiconductor layer 9 is vapor-deposited, a desired p-type silicon 5 pattern is formed in the same way. After forming the silicon 5 pattern, an n-type photosensitive semiconductor 9 is vapor-deposited and the semiconductor 9 is irradiated with ultraviolet rays so as to form a desired pattern. After forming the desired pattern, gold is vapor-deposited and tungsten oxide is again etched. Thus a field effect transistor is produced.
Patent JP-S6073702-A (JP)
Title: Number of revolution controller
Inventor: ASAKAWA JIYUNICHI
IPC: G05D13/62
Filed: 1983-09-30
Abstract: PURPOSE:To automatically change a number of revolution to one in which no abnormality occurs and, at the same time, to make operation which satisfies a control target value possible, by adding a setting of number of revolution changing device equipped with a prescribed function. CONSTITUTION:A setting of number of revolution changing device 10 is added. This changing device 10 is equipped with a function which automatically changes the setting of number of revolution from a number of revolution set in an operation inhibiting area to another number of revolution outside the operation inhibiting area when the first mentioned number of revolution is set in the operation inhibiting area in facilities provided with the operation inhibiting area in which no operation is allowed because abnormality occurs when operation is made in the fixed area within a number of revolution control range. Moreover, the pressure output signal 7a of a pressure detector 7, flow rate output signal 8a of a flow rate detector 8, and output signal 9a of a number of revolution detector 9 are inputted into the changing device 10 as signals for judgement. Therefore, setting of number of revolution can be changed automatically to a number of revolution in which no abnormality occurs and, at the same time, operation which satisfies a control target value can be realized.
Patent JP-S5882228-A (JP)
Title: Aperture controlling circuit for camera
Inventor: KAWAMURA MASAHARU
IPC: G03B7/095
Filed: 1981-11-12
Abstract: PURPOSE:To make always full-aperture photometry possible, by detecting stopping-down of an aperture and controlling a stepping motor before the release operation to return the aperture to the open state. CONSTITUTION:If an aperture AP has a certain aperture value by some cause in the initial state of photometry, clock pulses from a pulse generator CG1 are inputted to a stepping motor driving circuit DR through an OR gate O1 because a switch SW2 is opened. Since a switch SW1 is opened because of photometry, the output of an inverter I3 given to a terminal LE of the driving circuit DR becomes high-level. Then, a stepping motor SM is rotated counterclockwise to return the aperture to the open state. Thus, full-aperture photometry is always possible.
Patent JP-H0645002-A (JP)
Title: Sealed alkaline storage battery
Inventor: MIZUNO TAKASHI
IPC: H01M10/26
Filed: 1992-06-15
Abstract: PURPOSE:To make excellent an electric charge/discharge cycle characteristic, an internal pressure restraining effect, and a high rate electric discharge characteristic by using an electrolyte having a specific percentage by weight of sodium hydroxide and a specific gravity within a predetermined range. CONSTITUTION:An alkaline electrolyte is composed of potassium hydroxide, sodium hydroxide, and lithium hydroxide, where potassium hydroxide is 75wt% or more, and has a specific gravity within a range from 1.31 to 1.40. Accordingly, a utilizing rate of a positive electrode can be increased. The positive electrode has electric discharge characteristics such as rapid diffusion of an OH ion and a little decrease in capacity. It is possible to restrain the generation of oxygen gas from the positive electrode, prevent oxidation of a negative electrode, promote gas absorption, and reduce an internal pressure. Consequently, all of important electric characteristics inclusive of an electric charge/discharge cycle characteristic, an internal pressure restraining effect, and a high rate electric discharge characteristic become excellent.
Patent JP-H1070171-A (JP)
Title: Equipment and method for treating substrate
Inventor: INOKUCHI YASUHIRO
IPC: H01L21/02
Filed: 1997-06-20
Abstract: PROBLEM TO BE SOLVED: To provide an equipment and method for treating substrates whereby such a defect as a slip and the unevenness of treatments can be suppressed from occurring in the substrates. SOLUTION: Mounting a semiconductor wafer 100 on a ring-form wafer holding member 10 for holding the outer peripheral portion of the wafer 100, the wafer 100 is carried by a pair of tweezers 120 into a treatment chamber maintained previously at a predetermined temperature to treat the wafer 100 in the treatment chamber, leaving it mounted on the wafer holding member 10. Mounting the wafer 100 on the wafer holding member 10 also after completing its treatment it is carried out from the treatment chamber by the tweezers 120.  By the wafer holding member 10, the wafer 100 maintained at a high temperature is prevented from contacting directly with the tweezers 120 maintained at a low temperature, and since the whole outer peripheral portion of the wafer 100 is held by the ring-form wafer holding member 10 to make the temperature distribution in the surface of the wafer 100 uniform in the case of temperature rise or drop, the generation of any slip is suppressed.
Patent JP-2000015311-A (JP)
Title: Method for shifting work roll in hot-rolling mill
Inventor: SASAKI TAMOTSU
IPC: B21B31/18
Filed: 1998-06-26
Abstract: PROBLEM TO BE SOLVED: To reduce the shift resistance at the time of shifting a work roll by using a four-high rolling mill having a work roll shifting mechanism, executing the rolling of a hot-rolled steel plate and supplying lubricant between the work roll and the rolling material and between the work roll and backup rolls being in contact with the work roll. SOLUTION: At the time of shifting the work rolls 3a, 3b in the axial direction while hot-rolling the metallic plate 4 with a hot-rolling mill 1 constituted of the backup rolls 2a, 2b and the work rolls 3a, 3b and having the shifting mechanism of the work rolls 3a, 3b to the plate width direction, during shifting the work rolls 3a, 3b, the lubricant is supplied at least between each of the work rolls 3a, 3b and each of the backup rolls 2a, 2b being in contact with this work roll or between the work rolls 3a, 3b and the metallic plate 4. Therefore, since the shift resistance is reduced and the work roll shift during rolling can be executed, the change in the width direction of the work roll profile can be smoothened.
Patent JP-H0930604-A (JP)
Title: Goods disposal device in periphery of jobsite
Inventor: FUKAYA TAKAHISA
IPC: B65G1/00
Filed: 1995-07-18
Abstract: PROBLEM TO BE SOLVED: To eliminate wiring work in a device at a jobsite, by arranging a connection box, having connector-connectable power source and signal terminals, to be connected by a connector-attached connecting cable. SOLUTION: Two conveyer devices 3A and 3B, for delivering a load with a mobile conveying carriage 1, are provided along a movement path 2 of the carriage 1, and safety fences 4A and 4B are provided on the outsides of these devices 3A and 3B respectively. Also, a working conveyer device 5, for picking up and replenishing a load, is provided on the other side conveying in/out port than that for the cart 1 for the devices 3A and 3B. Connection boxes 21 and 22 are arranged near to the device 5 and the adjoining fences 4A and 4B to be connected by a connector-attached connecting cable 41. Consequently, wiring work in the device at a jobsite can be eliminated to increase the degree of product completion.
Patent JP-H1069610-A (JP)
Title: Magnetic head assembly
Inventor: SHEN YONG
IPC: G11B5/39
Filed: 1997-06-20
Abstract: PROBLEM TO BE SOLVED: To lessen diffusion and electromigration. SOLUTION: This magnetic head assembly has a reading head having an active central region 18 and two nonactive side part regions 20, 22 formed in continuation therewith. This central region 18 has a magneto-resistive (MR) converter which enables the active sensing of the recording data of a recording medium. The central region 18 is encapsulated by protective layers 26, 27, 30, 32 and are separated from the side part regions 20, 22. The respective end part regions 20 have longitudinal biasing layers and multilayered conductive sections. These longitudinal biasing layers are formed of antiferromagnetic material layers and soft magnetic materials and/or hard magnetic longitudinal biasing layers which are alternately disposed. These multilayered conductive sections have conductive leads which do not come into contact with the MR element or the soft biasing layers.  The conductive layers are interlayer arranged between the plural spacers for structurally supporting the conductive sections and enhancing the mechanical hardness over the entire part of the conductive sections. The all or part of the protective layers 26, 27, 30, 32 are formed of selected refractory materials like the spacers of the conductive sections.
Patent JP-H0913230-A (JP)
Title: Beta-alumina fiber and its production
Inventor: IWANAGA KATSUSUKE
IPC: D01F9/08
Filed: 1995-06-26
Abstract: PURPOSE: To produce β-alumina fiber which contains a large amount of alkali (alkaline earth) metal components and has excellent ionic conduction by effecting primary firing of the precursor fiber obtained from the precursor of high-purity alumina fiber and conducting the secondary firing of the high-purity alumina fiber under specific conditions. CONSTITUTION: The spinning dope mainly comprising high-purity alumina fiber precursor is spun to give the precursor fiber, which is subjected to the primary firing at 600-1,300 deg.C. The high-purity alumina fiber is subjected to the secondary firing in the presence of an alkali compound and/or an alkaline earth metal at 1,100-1,600 deg.C whereby β-alumina fiber excellent in alkali resistance with a lattice constant of the C axis of 2.1-3.5 in the β-alumina crystal and a tensile strength of >=60kgf/mm<2> .
Patent JP-H09102458-A (JP)
Title: Pattern formation and surface treatment agent
Inventor: NAKAOKA SATOKO
IPC: H01L21/027
Filed: 1996-07-10
Abstract: PROBLEM TO BE SOLVED: To prevent formation of a refractory layer in a resist pattern surface by forming a resist film in a surface of a semiconductor board whose surface is treated by a specified silane compound and forming a resist pattern by development after exposure by using a mask having a desired pattern configuration to the resist film. SOLUTION: A surface of a semiconductor substrate 1 is treated by a surface treatment agent containing silane compound expressed by R<1> 4-n Si(OR)n . In the formula, (n) is an integer of 1 to 3 and R is a 1 to 6C substitutional saturated hydrocarbon group or non-substitutional saturated hydrocarbon group. Chemical amplification type resist is applied to a surface of the semiconductor substrate 1 whose surface is treated and a resist film is formed. After exposure by using a mask having a desired pattern configuration to the resist film, development is carried out and a resist pattern 2 is formed. Thereby, a refractory layer is not formed in a surface part of the resist pattern 2 and adhesion between the semiconductor substrate 1 and the resist pattern 2 can be improved.
Patent JP-H1115729-A (JP)
Title: High speed memory access control circuit
Inventor: OGASAWARA MASASHI
IPC: G06F12/04
Filed: 1997-06-20
Abstract: PROBLEM TO BE SOLVED: To secure the satisfactory performance to a high speed CPU operation by increasing a memory access cycle and shorting the halt period of a CPU whose arithmetic, processing is temporarily halted when a memory data request is received. SOLUTION: This circuit includes a memory control part 1, an image data control part 2 and a display control part 3. A large quantity of image data received from the part 1 are held at the part 2, and a necessary quantity of image data are transferred to the part 3 and shown on a display. The part 2 includes a multibit register and a register which are located at the input side (the side of the part 1) and the output side (the side of the part 3) respectively. Then the memory data are stored in a buffer. In such a constitution, the memory access cycle is increased and a period when the CPU arithmetic processing is temporarily halted is shortened. Thus, the CPU performance is fully secured.
Patent JP-H0230776-A (JP)
Title: Method for regenerating etching solution
Inventor: CHINDA SATOSHI
IPC: C23F1/46
Filed: 1988-07-20
Abstract: PURPOSE:To reduce the cost of regeneration of an FeCl3 etching soln. and to prolong the service life of the soln. by adding an oxidizing agent to the soln. to oxidize Fe<2+> in the soln. to Fe<3+> and to restore the etching performance. CONSTITUTION:When the etching performance of an FeCl3 etching soln. is deteriorated in photoetching, etc., an oxidizing agent such as NaClO3, NaClO, KMnO4 or NaBrO is added to the soln. Fe<2+> in the soln. is oxidized to Fe<3+>, an aq. FeCl3 soln. is reproduced and the oxidation-reduction potential is raised. Since gaseous chlorine is not blown, regenerating work is safely carried out.
Patent JP-S6159836-A (JP)
Title: Manufacture of semiconductor device
Inventor: OGINO TOSHIRO
IPC: H01L21/324
Filed: 1984-08-31
Abstract: PURPOSE:To bury an insulator having excellent chemical resistance into a groove through a simple method or make the stepped section of a foundation easy by thermally treating a silicon dioxide layer containing germanium dioxide in hydrogen. CONSTITUTION:A silicon dioxide layer 26 is formed by oxidizing an Si-Ge alloy layer. The Si-Ge alloy layer is shaped in such a manner that a gas such as a mixed gas of silane and germane is thermally decomposed at 450 deg.C and deposited, and the ratio of gas flow rates of silane and germane is adjusted so that the composition ratio of germanium dioxide in the silicon dioxide layer 26 after oxidation reaches 55mol%. When a silicon substrate is thermally treated for 10min in hydrogen at 900 deg.C, the irregularities of the surface are removed in the silicon dioxide layer 26, and a flat film is formed. A silicon dioxide layer 27 is etched by using an etching liquid for a silicon oxide film, a silicon thermal oxide film is also etched similarly, and etching is completed at a point of time when an epitaxial layer 22 is exposed, thus finishing an isolation process.
Patent JP-H0233558-A (JP)
Title: Hot water feeder
Inventor: MURAKAMI YOICHIRO
IPC: F24H1/10
Filed: 1988-07-20
Abstract: PURPOSE:To provide excellent temperature characteristics by a method wherein based on an output number provided by synthesizing a feedforward number and a feedback number, a gas proportional control valve is controlled, and the number of burners under combustion is switched. CONSTITUTION:During the feed of hot water, based on a set temperature TS set by a feed hot water temperature set means 17, a inflow water temperature TC detected by an inflow water temperature detecting means 13, and a pass water flow rate Q detected by a pass water flow rate means 14, a feedforward number GFF is computed, and the feedforward number GFF forms an output number G for a specified time of the initial stage of the feed of hot water. Thereafter, a feed hot water temperature TH is detected by a feed hot water temperature detecting means 15, and based on a deviation between the set temperature TS and the feed hot water temperature TH, a feedback number GFG is computed, and the output number G forms an synthesized output of the feedforward number GFF and the feedback GFB.
Patent JP-H092602-A (JP)
Title: Leftover food accommodation bag fitted with cover, and leftover food accommodation appliance
Inventor: NAKATANI SUSUMU
IPC: B65F1/00
Filed: 1995-06-25
Abstract: PURPOSE: To suppress the diffusion of bad odor by covering the opening of a leftover food accommodation bag without polluting a sink with leftover food. CONSTITUTION: A front part 172 is provided by folding a sheet forward from a fold 171 constituting the bottom, and a rear part 173 is provided by folding it rearward from the fold 171, and a water draining hole 174 is provided at the lower part of the front part 172, and the accommodation bag body 175 is made of the front part 172 and the rear part 173. A member is extended from the rear part 173 so as to make a cover 176, and the part 173 is folded frontward and downward at a fold 181 to cover the front part 172. The right and left sides of the cover 176 are separated from 176 to make a first band 178 and a second band 179, and the bands 178 and 179 are joined at junctions 10 and 10 to the upper part of an accommodation bag body 175. Furthermore, for the front part 172, the rear part 173, the first band 178, and the second bang 179, the sides are joined at junctions 180 and 180.
Patent JP-S5881106-A (JP)
Inventor: KANAZAWA MOTOTAKA
IPC: B27D5/00
Filed: 1981-11-10
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6240449-A (JP)
Title: Negative type resist material and formation of resist pattern
Inventor: ITO TOSHIO
IPC: H01L21/027
Filed: 1985-08-17
Abstract: PURPOSE:To form a fine pattern having high resolving power by a simple process by using a negative type resist material made of the vinyldimethylsilyl ether of the naphthoquinonediazidosulfonic ester of cresol-novolak resin. CONSTITUTION:This negative type resist material is made of the vinyldimethylsilyl ether of the naphthoquinonediazidosulfonic ester of cresol- novolak resin. The vinyldimethylsilyl ether represented by formula II is obtd. by introducing vinyldimethylsilyl groups into the naphthoquinonediazidosulfonic ester of cresol-novolak resin represented by formula I. In the formulae, each of k, l, m and n is a positive integer, n=k+l and 4<=n+m<=20. The resist material is used as the resist of the upper resist layer of a two-layered resist film and can be exposed with far ultraviolet rays, so that resolution is obtd.
Patent JP-H07187850-A (JP)
Title: Lightweight mortar, lightweight mortar structure of lightweight mortar panel, etc., lightweight mortar layer formed on surface of body, etc., of building and formation of lightweight mortar layer on body, etc., of building
Inventor: HOSOI YOSHITOMO
IPC: C04B103/60
Filed: 1993-06-25
Abstract: PURPOSE:To provide a lightweight mortar capable of simplifying the work by making it remarkably light compared to a conventional mortar to provide, a lightweight mortar structure such as lightweight mortar panel, and a lightweight mortar layer formed on the surface of a body or the like of a building and to provide a method for forming the lightweight mortar layer on the surface of a body or the like of a building. CONSTITUTION:The lightweight mortar is formed by kneading a synthetic resin being a principal, cement being a hardening material, special lightweight aggregate and water. The lightweight mortar is formed in a plate form and the lightweight mortar structure body such as the lightweight mortar panel is formed. Besides, the lightweight mortar layer is formed on the surface of a body or the like of a building by applying the lightweight mortar on the surface of the body or the like of the building at a specified thickness. Thus, occurrence of failures such a cracks peculiar to mortar and rising is prevented and also a working rate for production of the mortar layer is enhanced.
Patent JP-S5971690-A (JP)
Title: Immobilization of enzyme
Inventor: SUZUKI SHIYUUICHI
IPC: G01N27/30
Filed: 1982-10-15
Abstract: PURPOSE:To stabilize the enzymatic activity after immobilization, without too much lowering the activity of enzyme in immobilization, by including and immobilizing an enzyme to a carrier composed of aminated poly(amino acid) having acidic gruop, and crosslinking the enzyme and the carrier in the immobilized film. CONSTITUTION:The carboxyl group of a poly(amino acid) having acid unit is aminated, and an enzyme is included and immobilized to the aminated poly (amino acid). Thereafter, the enzyme is crosslinked to the carrier by using glutaraldehyde to stabilize the enzymatic acitivity after immobilization. The aminated poly(amino acid) is used in the form of polymer dope by dissolving in an organic solvent. Any organic solvent, e.g. dimethylformamide, dimethyl sulfoxide, etc., can be used provided that it is a good solvent of the polymer, is soluble in water, and is capable of dispersing or dissolving an enzyme without remarkable loss of the enzymatic activity.