baber/WOPTO huggingface dataset:
Patent TW-356577-B (TW)
Title: Component carrier having a wave pattern tension reduction surface
Inventor: BLONDIN JOHN M
IPC: H01L21/673
Filed: 1997-11-20
Granted: 1999-04-21
Abstract: A container system for stroing and transporting sensitive components such as semiconductor chips is disclosed. The container system includes in combination, a housing and a plurality of component carriers for receiving components to be stored and transported in stacked banks. The plurality of component carriers are stacked one on top of the other in a top-to-bottom stacked arrangement within the housing. An underside bottom surface of a first component carrier provides a top cover to a second component carrier positioned immdeiately below the first component carrier, wherein a component carrier includes a compartmental core for storing components on a top surface thereof in segmented row compartments, each segmented row compartment having sidewall surfaces and a bottom surface. The component carrier further includes an underside surface characterized by unidirectional waves having a prescribed wave amplitude and a prescribed wave period, the wave amplitude and wave period selected for simultaneously providing a reduced surface tension to a top surface of a component part and a reduced potential for damage to protruding surface features on a top surface of the component part, respectively, the component part further for being stored in a row compartment of an underlying component carrier in the stacked arrangement.
Patent TW-363250-B (TW)
Title: Manufacturing method of thin film transistor
Inventor: HUANG KUO-CHING
IPC: H01L21/768
Filed: 1997-12-29
Granted: 1999-07-01
Abstract: A kind of manufacturing method of thin film transistor which: first, forms the first polycrystalline silicon layer on the substrate and creates the patterns of polycrystalline silicon gate and polycrystalline connection by the photolithography and etching; and deposes a layer of gate oxide on the substrate and the pattern of polycrystalline silicon and forms the second polycrystalline silicon layer, another oxide layer and define the pattern of the second polycrystalline silicon channel region; then, proceeds the ion implantation on the second polycrystalline silicon layer and forms the doped region of source/drain; then, partially etching the second polycrystalline silicon layer and gate oxide layer to open the contact; last, selectively forms the wolfram within the said polycrystalline silicon contact and the surface of second polycrystalline silicon layer.
Patent TW-386904-B (TW)
Title: In-situ chemical reactor for recovery of metals or purification of salts
Inventor: HSU KENNETH J
IPC: E21B43/28
Filed: 1998-05-07
Granted: 2000-04-11
Abstract: An in-situ reactor with hydrologic cells is provided to facilitate recovery of metals such as gold from rocks, or purification of salts such as potassium or magnesium chloride formed by evaporation of brines, by injecting into a source aquifer a fluid, which flows through and reacts with the solids or host rock within the in-situ reactor and then flows into a sink aquifer, from it is drained or pumped out via an exhaust borehole into a plant or a facility for further chemical treatment.
Patent TW-423073-B (TW)
Title: Improved methods for performing planarization and recess etches and apparatus therefor
Inventor: CHAUDHARY NIRMAL
IPC: H01L21/02
Filed: 1998-08-19
Granted: 2001-02-21
Abstract: A method, in an RF-based plasma processing chamber 600, for performing a planarization etch and a recess etch of a first layer on a semiconductor wafer 614. The method includes placing the semiconductor wafer, including a trench formed therein, into the plasma processing chamber. The method also includes depositing the first layer over a surface of the semiconductor and into the trench. There is further included performing the planarization etch to substantially planarize the first layer in the plasma processing chamber, the planarization etch being performed with a first ion density level. Additionally, there is included performing, using the plasma processing chamber, the recess etch on the first layer to recess the first layer within the trench. The recess etch is performed with a second ion density level in the plasma processing chamber, with the second ion density level being higher than the first ion density level.
Patent TW-389019-B (TW)
Title: Coding method and coder, and recording medium recorded with image coded data
Inventor: SUGAWARA TAKAYUKI
IPC: H04N19/126
Filed: 1998-10-23
Granted: 2000-05-01
Abstract: The present invention provides a coding method and a coder by which control accuracy of delicate image quality is improved together with code amount control accuracy even in the case of an application such as still image coding that uses only one intra-image of the MPEG(moving picture experts group). A fine quantization scale obtained by a code quantity controller 21 is fed to a fine quantization scale converter 22, which cross-references the 'fine quantization scale' and 'quantization matrix and quantization scale' and gives the 'quantization matrix and quantization scale' to a quantizer 13. The quantizer 13 divides a DCT(discrete cosine transformation) coefficient from a DCT device 12 by the product of the quantization matrix an the quantization scale to conduct quantization by rounding off or rounding the quotient. An effective quantization width that interpolates values of the quantization scale is obtained by using the fine quantization scale through the use of a combination of the quantization matrix and the quantization scale.
Patent TW-388821-B (TW)
Title: Automatically guiding to optimum learning path system
Inventor: JAN HAU-BO
IPC: G06F15/18
Filed: 1998-11-27
Granted: 2000-05-01
Abstract: An automatically guiding to optimum learning path system that first proceeds a large number of tests and automatically records important learning process and the mistakes produced while practicing, furthermore, analyzes the data in the database and gives guide while the user make the choice of learning path to make the user learn by faster path. Then analyzes based on the database and saves the result of analyzing to the guiding database, furthermore, gives the user guide while learning to make the user learn effectively. At last, for the sake of not letting the user forget what he has learned quickly and what mistake he has made, supplies data from the database, proceeds re-browsing and reviewing to achieve the purpose of repeat-learning.
Patent TW-435020-B (TW)
Title: A vector network analyzer architecture based on sliding correlator techniques
Inventor: HUANG JIA-CHI
IPC: G01R27/28
Filed: 1998-12-28
Granted: 2001-05-16
Abstract: A vector network analyzer is an important instrument for measuring and characterizing RF or microwave devices and components. Most Network analyzers currently sold on the markets adopt a super-heterodyne receiver architecture for its measurements. Some calibration laboratory might use a six-port network analyzer in order to achieve more accurate measurement results, nevertheless at the expanse of much higher system complexity and cost. Another way to do network analysis is to use very high speed pulses and conduct measurements in the time domain. This method is still under development in some research laboratories. In this invention, we use the sliding correlator techniques commonly employed in a spread spectrum communication system to design a vector network analyzer. A sliding correlator technique is based on the time domain sliding effect caused by a small clock frequency offset in the pseudo random code generators of a transmitter and a receiver. A time scaled version of the impulse response of the device under test can be obtained from the time domain slided pseudo random code signals by using a correlator. A fast Fourier transform of the measured impulse response is the frequency response of the device under test. A vector network analyzer based on the sliding correlator techniques is much less expensive because the cost and the complexity of both signal source and receiver is much reduced. The measurement time can also be reduced as a single measurement run generates output data for a frequency band instead of at a single frequency. Thus, the efficiency of network measurements can be increased.
Patent TW-411675-B (TW)
Title: Indoor TDMA communications system
Inventor: FAIRFIELD ROBERT CHARLES
IPC: H04B7/26
Filed: 1999-01-27
Granted: 2000-11-11
Abstract: A wireless telecommunications system architecture is disclosed that is capable of supporting a centralized block radio architecture and of distributing the information-bearing signals from the block radio to geographically-dispersed radio heads using relatively low-cost cable (e.g., twisted-pair, etc.). In accordance with the illustrative embodiment of the present invention, a radio multiplexes, modulates, and channel codes one or more information-bearing signals and upconverts them, not to radio frequency, but to an intermediate frequency that can be transmitted over a low-cost cable. Co-located with each radio head is an upconverter that upconverts the intermediate frequency signal to radio frequency in preparation for radiation by an antenna.
Patent TW-417088-B (TW)
Title: Disk ejecting device
Inventor: SAKURAI TOSHIHIRO
IPC: G11B17/04
Filed: 1999-02-24
Granted: 2001-01-01
Abstract: Because the conventional disk ejecting device uses the same apparatus as the entering device, it takes longer disk exchanging time and also complicated disk exchanging operation. The disk of invented turret Ta is arisen on the moving tray 41 and after ejecting the first ejecting component, it can be ejected by the second ejecting component configured around the ejecting exit. Because it can immediately return to the original storage state after ejecting the disk by the first ejecting component, it can exchange the existing disk with the new disk in a very short time and also because the disk exchanging is conducted in the disk device, it does not need manual disk exchanging operation.
Patent TW-434965-B (TW)
Title: Power supplying adapter, electronic equipment, and signal transmission system
Inventor: NAGAI TAMIJI
IPC: H02J9/00
Filed: 1999-03-04
Granted: 2001-05-16
Abstract: A power supplying adapter which is connected to an AC power source and generates a predetermined DC voltage is constructed by: a power supplying unit in which a small power mode to output a small electric power and a large power mode to output a large electric power can be switched; a current detecting unit for detecting a current which is outputted from the power supplying unit; signal receiving means for receiving a signal which is transmitted from electronic equipment; and control means for making the power supplying unit operative in the small power mode and making the signal receiving means operative when the current detected by the current detecting means is equal to or smaller than a reference value. The electronic equipment is constructed by : a signal transmitting unit for transmitting a signal to the power supplying adapter; second control means for controlling the signal transmitting means; and switching means for switching a power source which is supplied from the power supplying adapter.
Patent TW-430581-B (TW)
Title: Laser apparatus
Inventor: TAKENAKA YUSHI
IPC: H01S3/107
Filed: 1999-03-24
Granted: 2001-04-21
Abstract: The present invention provides a laser apparatus. Since the output of normal laser beam is larger than that of the Q-switched pulse laser beam, there is a problem in the structure to combine the normal laser apparatus with the Q-switched laser apparatus caused by the fact that the electro-optical modulator will exceed the tolerance limit. The present invention provides a laser apparatus, when there is no voltage applied to the optical modulation means, the first linearly polarized component through the polarization controlling mirror in the first laser resonator generates the laser oscillation, and the laser beam is emitted from the second reflective mirror; when there is pulsed voltage applied to the optical modulation means, the second linearly polarized component of the laser beam reflected from the polarization controlling mirror passes through the optical modulation means and causes the Q-switched laser oscillation in the second laser resonator, and the first linearly polarized component is emitted from the second reflective mirror through the polarization controlling mirror.
Patent TW-494563-B (TW)
Title: Semiconductor device and its manufacture method
Inventor: LIU MENG-HWANG
IPC: H01L23/60
Filed: 1999-04-26
Granted: 2002-07-11
Abstract: This invention provides a semiconductor device for forming non-silicide region on a substrate containing electrostatic discharge (ESD) region and internal region, and its manufacture method. A passivation layer is formed on the part of the ESD region where the formation of silicide should be avoided and thus silicide formation will occur on the part of the ESD region without coverage of the passivation layer and the internal region. Subsequently, part of the passivation layer is removed and thus the residual passivation layer will form the sidewall isolation layer of the gate electrode in the adjacent ESD region.
Patent TW-413937-B (TW)
Title: Ultra compact DRAM cell and method of making
Inventor: HSU LOUIS LU-CHEN
IPC: H01L27/108
Filed: 1999-06-01
Granted: 2000-12-01
Abstract: A structure and method of manufacture is disclosed herein for a semiconductor memory cell having size of 4.5 F2 or less, where F is the minimum lithographic dimension. The semiconductor memory cell includes a storage capacitor formed in a trench, a transfer device formed in a substantially electrically isolated mesa region extending over a substantial arc of the outer perimeter of the trench, a buried strap which conductively connects the transfer device to the storage capacitor, wherein the transfer device has a controlled conduction channel located at a position of the arc removed from the buried strap. Also disclosed herein are methods of forming a semiconductor memory cell and of forming groups of semiconductor memory cells. A method of forming a semiconductor memory cell includes the steps of forming a storage capacitor in a deep trench etched into a substrate including a monocrystalline semiconductor; forming a shallow trench isolation (STI) region at least partially overlaying the deep trench; forming and outdiffusing a strap in a sidewall of the deep trench; forming first spacers on exterior surfaces of the STI region and deep trench; etching, selective to the monocrystalline semiconductor; removing the first spacers to expose a mesa region of monocrystalline semiconductor located on exterior sidewalls of the deep trench and STI region and conductively connected to the strap; adjusting dopant concentrations in at least a portion of the mesa region to form a channel region and source/drain regions; forming a gate dielectric over at least the channel region; depositing a gate conductor over the channel region; and forming a bitline contact to a first of the source/drain regions.
Patent TW-448377-B (TW)
Title: Browser with automatic filtering web pages and its browsing method
Inventor: YANG SHENG-HONG
IPC: G06F40/00
Filed: 1999-06-21
Granted: 2001-08-01
Abstract: It is a kind of browser with automatic filtering web pages and its browsing method that can save much time and money of downloading for users. According to this browsing method of automatic filtering web pages, it first needs to provide a browser when downloading web pages by HTTP protocol, and uses this browser to link to visited web pages to fetch responding data of visited web pages including status line, physical head and physical text. Then, it re-analyses the first three characters of status line to confirm receiving of responding data, and analyze physical head and physical text to confirm character sets used by visited web pages. And, users can determine if the browser used now supports character sets used by visited web pages or not to decide if it continues to download visited web pages.
Patent TW-409302-B (TW)
Title: Method of preventing bridge effect on gate electrodes and source/drain electrodes of the self-aligned silicide
Inventor: TSAI TENG-CHIUN
IPC: H01L21/28
Filed: 1999-07-03
Granted: 2000-10-21
Abstract: A method of preventing bridge effect on gate electrodes and source/drain electrodes of the self-aligned silicide is applicable in a semiconductor substrate. Firstly, define a first insulating layer having a first opening on the semiconductor substrate surface, and then form a first insulating isolating layer on the sidewall of the first insulating layer in the first opening, and a second insulating isolating layer on the sidewall of the first insulating isolation layer, and a second opening by means of the second insulating isolating layer. Secondly, form a gate structure in the second opening adjacent to the second insulating isolating layer, and then remove the first insulating layer and the second insulating isolating layer and leave behind the first insulating isolating layer and the gate electrode structure forming a gate-side air gap. Further, it forms the source/drain electrodes on both sides of the gate electrode of the semiconductor substrate, and then proceeds with the metal silicide process. Since the formation of the gate-side air gap can lower the probability of forming titanium silicides on the surface of insulating isolating layers, therefore it can prevent the bridge phenomenon between the gate electrode and the source/drain electrodes.
Patent TW-418121-B (TW)
Title: Method and apparatus of stably controlling rolling mill
Inventor: MARUSHITA YOSHIHIRO
IPC: B21B37/00
Filed: 1999-07-20
Granted: 2001-01-11
Abstract: In a stabilization control of rolling, a proportional differential control is performed on a snake motion of a to-be-rolled material which is caused during a rolling process, on the basis of a lateral deviation of loads which are detected by load sensors disposed on a rolling mill, an instruction value of a lateral deviation of leveling which is to be given to a draft device is calculated, and a roll gap is adjusted on the basis of the instruction value to stabilize the snake motion of the to-be-rolled material. A stabilization low-pass filter having a pole time constant which is substantially equal to a zero-point time constant of operation frequency characteristics of the rolling mill is disposed.
Patent TW-442944-B (TW)
Title: Fabricating method of metal oxide semiconductor transistor
Inventor: LIN JIAN-TING
IPC: H01L27/00
Filed: 1999-08-18
Granted: 2001-06-23
Abstract: This invention is about a fabricating method of metal oxide semiconductor transistor. In this invention, gate oxide layers with different thickness are formed on the core region and the output/input region. After forming well regions in substrate, two implanted regions for partially adjusting threshold voltage and anti-punch through are individually formed at the regions corresponding to gates in P-well and N-well of core region. Two implanted regions for globally adjusting threshold voltage and anti-punch through are individually formed in P-well and N-well of output/input region. For the core region part, the method is to form a mask-pattern layer on the gate oxide layer, in which the opening of this mask pattern layer for example roughly corresponds to the P-well channel region of core region. This mask pattern layer is used as the ion implantation mask so as to form two implanted regions for partially adjusting threshold voltage and anti-punch through in P-well of core region. After this mask pattern layer is stripped, the procedures stated above are repeated to form implanted region at the other region. The sequence conducted onto the region stated above can be arbitrarily changed. After that, the following metal oxide semiconductor transistor process is then conducted.
Patent TW-449688-B (TW)
Title: Microcomputer provided with flash memory and method of storing program into flash memory
Inventor: HAYAMA MASAHIRO
IPC: G06F9/445
Filed: 1999-09-22
Granted: 2001-08-11
Abstract: The present invention provides a microcomputer provided with a flash memory and a method of storing a program into a flash memory by which a write failure which arises from an interruption of rewriting processing of the flash memory can be detected rapidly and with certainty. The microcomputer provided with a flash memory comprises a rewrite program area for storing a program for a rewriting processing procedure for the flash memory, and a controller for forming a plurality of flag areas locally in the flash memory when the rewriting program stored in external storage means or the rewrite program area is written into the flash memory, performing determination of completion of a plurality of stages of rewriting processing or determination of whether the plurality of stages are good or bad and recording results of the determination into the respective flag areas.
Patent TW-428316-B (TW)
Title: Manufacturing method for tantalum oxide capacitor
Inventor: HUANG GUO-TAI
IPC: H01L27/108
Filed: 1999-10-16
Granted: 2001-04-01
Abstract: A manufacturing method for capacitor includes the following steps: providing a semiconductor substrate with partly accomplished components in which the semiconductor substrate had formed with conductor plug and electrically connected underneath components; forming the lower electrode on the conductor plug; forming a tantalum oxide layer on the surface of the lower electrode; forming the barrier on the tantalum oxide layer; forming the metal silicide layer on the barrier.
Patent TW-445660-B (TW)
Title: Electrolyte system for lithium batteries and its use and also a method of increasing the safety of lithium batteries
Inventor: APPEL WOLFGANG
IPC: H01M10/40
Filed: 2000-01-06
Granted: 2001-07-11
Abstract: Electrolyte systems for lithium batteries having increased safety comprise at least one lithium-containing electrolyte salt and at least one electrolyte liquid and, according to the invention, have an effective content of at least one partially fluorinated amide of the formula (I) R1CO-NR2R3, where R1 is a linear C1-C6-alkyl group in which one or more hydrogen atoms are replaced by fluorine atoms; or is a branched C3-C6-alkyl group in which one or more hydrogen atoms are replaced by fluorine atoms; or is an unsubstituted C3-C7-cycloalkyl group or a C3-C7-cycloalkyl group which is substituted by one or more linear C1-C6-alkyl groups and/or branched C3-C6-alkyl groups, in which one or more hydrogen atoms of the cycloalkyl radical and/or any substituting linear and/or branched alkyl radicals are replaced by fluorine atoms; R2 and R3 are identical or different and are each, independently of one another, a linear C1-C6-alkyl group, a branched C3-C6-alkyl group or a C3-C7-cycloalkyl group, or R2 and R3 together with the amide nitrogen form a saturated 5- or 6-membered, nitrogen-containing ring or are joined to one or more additional N and/or O atom(s) to form a ring having from 4 to 7 ring atoms, where any additional N atoms present in the ring are substituted by C1-C3-alkyl and the ring carbons may also bear C1-C3-alkyl.