baber/WOPTO huggingface dataset:
Patent TW-363121-B (TW)
Title: Process and apparatus for producing pressurized nitrogen
Inventor: VOIT JURGEN
IPC: F25J3/02
Filed: 1997-11-13
Granted: 1999-07-01
Abstract: The process and the apparatus serve to produce pressurized nitrogen by low-temperature fractionation of air in a rectification system which has a pressure column and a low-pressure column. Feed air is passed into the pressure column. An oxygen-containing liquid fraction is taken off from the pressure column and fed into the low-pressure column. Gaseous nitrogen from the low-pressure column is at least partially condensed in a top condenser by indirect heat exchange with an evaporating liquid. Nitrogen from the low-pressure column is produce as gaseous pressurized nitrogen product at a pressure which is higher than the operating pressure of the low-pressure column. Liquid nitrogen withdrawn from the low-pressure column is brought in the liquid state to a pressure which exceeds the pressure of the low-pressure column. The pressurized liquid is evaporated in a product evaporator by indirect heat exchange with a heat-transfer medium and is subsequently produced as gaseous pressurized nitrogen product.
Patent TW-380358-B (TW)
Title: Surface mount pad
Inventor: GRABBE DIMITRY
IPC: H05K3/34
Filed: 1997-11-20
Granted: 2000-01-21
Abstract: An apparatus and method for establishing a reliable compressive electrical connection between an electronic package and surface mount pads of the printed circuit board are disclosed. Contact pads are solderable to pads of the printed circuit board and have electrically compatible metallurgy on the contact surface. These contact pads are solderable to the pads on their mounting surface. The contact pads are assembled to the printed circuit board by first adhesively attaching an array of contact pads to a film and then placing the array over the pads of the printed circuit board and finally reflowing solder which was previously attached to the pads to complete the attachment.
Patent TW-393581-B (TW)
Title: Lenses for electronic imaging systems
Inventor: KREITZER MELVYN H
IPC: G02B27/00
Filed: 1997-12-02
Granted: 2000-06-11
Abstract: Lenses for use with electronic imaging systems, e.g., systems employing CCDs, are provided. The lenses employ two lens elements, the first of which is a thick lens element having a negative power and the second of which has a positive power and is spaced from the first lens element by a distance which is at least a quarter of the focal length of the lens.  In some embodiments, the second lens element is a refractive-diffractive hybrid element in which case both the first and second lens elements can be composed of acrylic and can have only spherical and conic surfaces.  In other embodiments, the first lens element has a higher dispersion than the second lens element, e.g., the first lens element is composed of styrene and the second lens element is composed of acrylic.  In this case, the first lens element can have a spherical and a general aspherical surface, and the second lens element can have conic surfaces, or both the first and second lens elements can have a spherical surface and a conic surface.
Patent TW-363171-B (TW)
Title: Verifier device for a magnetic security thread for verifying the authenticity of a document having a security thread associated therewith
Inventor: DAMES ANDREW
IPC: G07D7/04
Filed: 1998-01-05
Granted: 1999-07-01
Abstract: A device for verifying the authenticity of a document having a security thread associated therewith, the security thread including one or more regions of magnetic material, each region of magnetic material having one or more predetermined magnetic characteristics including a coercivity of no greater than 5000 amperes per meter and a relative permeability of between 200 and 10,000, the device comprising; (a) drive means for providing an applied magnetic field as an alternating current magnetic field at a predetermined fundamental frequency within a predetermined spatial region through which the document is passed, the drive means comprises means for providing the applied magnetic field to saturate at least one of the one or more regions of magnetic material; (b) receive means for sensing a response magnetic field within the predetermined spatial region through which the document is passed at a distance of no greater than ten millimeters from a magnetic field sensing portion of the receive means, and for providing one or more sensed signals indicative of a corresponding one or more characteristics of the response magnetic field; and (c) signal processing means, responsive to the sensed signals for determining at least one of the one or more predetermined magnetic characteristics of each region of magnetic material to verify the authenticity of the document.
Patent TW-423070-B (TW)
Title: Scrubbing apparatus and scrubbing method
Inventor: OTA YOSHIHARU
IPC: B08B3/04
Filed: 1998-02-05
Granted: 2001-02-21
Abstract: A scrubbing apparatus comprises a holding member, which holds the outer circumference of the substrate from its back surface and has an opening to expose the back surface of the held substrate toward the bottom side; a supporting member, which supports substantially the center between two opposed sides of the holding member; a scrubbing brush, which comes in contact with the exposed back surface of the substrate from the bottom side; a brush drive mechanism, which transfers the scrubbing brush along the two opposed sides of the holding member; and a rotation drive mechanism, which drives to rotate the holding member together with the supporting member. Thus, a space can be saved, and the back surface of the substrate can be scrubbed.
Patent TW-372337-B (TW)
Title: Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
Inventor: ISHIBASHI TAKEO
IPC: G03F7/40
Filed: 1998-03-24
Granted: 1999-10-21
Abstract: When forming the photo-resistance at exposure, the wavelength with the micro limitation must exceed the said limitation. The invention provides the method which is with the photo-resistance pattern composing the acid material by the exposure to cover the photo-resistance of bridging material due to the existence of acid. By the heating or exposure in the photo-resistance to generate the acid and employ the bridge layer generated from the interface which is treated as the covering of photo-resistance pattern so as to expand the photo-resistance pattern. Therefore, it can reduce the diameter of photo-resistance holes and reduce the separation width.
Patent TW-536532-B (TW)
Title: Process for the production of 1,3-propanediol by hydrogenating 3-hydroxypropionaldehyde
Inventor: HAAS THOMAS
IPC: C07C29/141
Filed: 1998-06-16
Granted: 2003-06-11
Abstract: A process for the production of 1,3-propanediol by heterogeneously catalyzed hydrogenation of 3-hydroxypropionaldehyde in an aqueous solution at 30 DEG to 180 DEG C, a hydrogen pressure of 5 to 300 bar and a pH value of 2.5 to 7.0, wherein ruthenium on an oxide support is used as the catalyst.
Patent TW-486694-B (TW)
Title: Optical record carrier and scanning device
Inventor: VAN DEN ENDEN GIJSBERT JOSEPH
IPC: G11B7/0055
Filed: 1998-09-17
Granted: 2002-05-11
Abstract: An optical record carrier (10) comprises a recording layer for recording information in a pattern of optically detectable marks in substantially parallel tracks (11-15). Neighbouring tracks are separated by edges (16-20). Control information is encoded in a modulation of the transverse position of the even-numbered edges (16, 18, 20). The modulation of neighbouring even-numbered edges have a mutual fixed phase shift. The modulation of the odd-numbered edges (17, 19) is such as to enhance the amplitude of a push-pull signal when scanning the tracks (11, 12) neighbouring such an odd-numbered edge (17).
Patent TW-389942-B (TW)
Title: Formation of a titanium dioxide film
Inventor: LI MING-KUEI
IPC: C23C18/00
Filed: 1998-09-28
Granted: 2000-05-11
Abstract: This invention provides a method for forming titanium dioxide film on a device. Acidic material is put into the titanium-containing material and they are mixed to form a mixture. Then the device is disposed in such mixture to form the titanium dioxide film. This method not only increases refraction index of the titanium dioxide but also enhances the growth rate and the stability of the film.
Patent TW-410363-B (TW)
Title: Method of recovering chamber after dry clean
Inventor: HUANG JENG-HAU
IPC: H01L21/00
Filed: 1998-10-02
Granted: 2000-11-01
Abstract: A method of recovering a chamber after dry clean. A blank silicon control wafer is disposed in the high density plasma silicon etching apparatus. The plasma gas containing oxygen and chlorine is used to etch the control wafer when a power source higher than 200W is applied on the lower electrode plate. The status of the chamber is then detected by optical emission spectroscopy (OES).  Recovering the chamber only requires one control wafer in this invention instead of 12 wafers by the conventional way, and the low power and low cost can be achieved in addition to the reduced consumption of the control wafers.
Patent TW-469604-B (TW)
Title: Cell projection mask having an electron beam penetration prevention layer
Inventor: KIM YOUNG-SIK
IPC: H01L21/84
Filed: 1998-10-30
Granted: 2001-12-21
Abstract: A cell projection mask using a SOI wafer having a thin film silicon layer and an electron beam penetration layer and a method for fabricating the same, comprising the steps of: providing a silicon on insulator wafer where a buried oxide and a thin film silicon layer are formed on a silicon substrate, the silicon on insulator wafer having apertures; sequentially etching the thin film silicon layer and the buried oxide formed on the silicon substrate; back-side etching the silicon substrate, thereby forming apertures; and forming a layer for preventing an electron beam from penetrating the silicon layer on an upper, bottom and side surfaces of the silicon on insulator wafer.
Patent TW-593331-B (TW)
Title: Method for large-scale production of di(uridine 5')-tetraphosphate and salts thereof
Inventor: YERXA BENJAMIN R
IPC: C07H21/00
Filed: 1998-12-21
Granted: 2004-06-21
Abstract: The present invention provides new methods for the synthesis of the therapeutic dinucleotide, P1, P4-di(uridine 5')-tetraphosphate, and demonstrates applicability to the production of large quantities. The methods of the present invention substantially reduce the time period required to synthesize diuridine tetraphosphate, preferably to three days or less. The novel tetrammonium and tetrasodium salts of P1, P4-di(uridine 5')-tetraphosphate (formula I) prepared by these methods are stable, soluble, nontoxic, and easy to handle during manufacture. Formula I wherein: X is Na, NH4 or H, provided that all X groups are not H.
Patent TW-387035-B (TW)
Title: Reciprocating piston engine and linking mechanism
IPC: F16H25/08
Filed: 1998-12-30
Granted: 2000-04-11
Abstract: To provide a linking mechanism almost generating non-vibration, noiselesness little friction loss, high machine efficiency, capable of being constituted to be compact and lightweight, and used for a reciprocating piston compressor, a reciprocating piston pump, a press machine or the like. The operations of at least a pair of pistons The operations of at least a pair of pistons moved in opposite directions in correlation with each other are converted into swinging rotational motions via a swing arm having left and right parts equal to each other in mass and swinging rotational radius, then the motions are uniformly divided into two parts by connecting rods and transmitted to a linking mechanism, and these are converted into the rotation of a rotary shaft incorporated in the linking mechanism and then outputted.
Patent TW-393689-B (TW)
Title: Method for producing silicide gate structure
Inventor: LIAU JUNG-JR
IPC: H01L21/28
Filed: 1999-01-08
Granted: 2000-06-11
Abstract: This invention relates to a silicide gate structure manufacturing method.  It provides a substrate, a gate oxide layer, a doped polysilicon layer, a silicide layer, and a mask layer. Then an etching process is performed to etch the mask layer, silicide layer, doped polysilicon layer and gate oxide layer. A gate structure of the semiconductor components is formed on the substrate. By ion implantation, a lightly doped drain area in the substrate is formed. An etching process etches the silicide layer and forms a concave gate structure. Then a high-temperature annealing process for the gate structure is proceeded. The silicide layer grows fast in high temperature to form a gate structure with smooth surface.
Patent TW-525289-B (TW)
Title: Embedded energy storage device
Inventor: STAFFIERE DONALD T
IPC: H05K1/00
Filed: 1999-02-04
Granted: 2003-03-21
Abstract: The present invention is directed towards an embedded electrical storage device in a layered electrical device, such as a printed circuit board or IC chip. The layered electrical device comprises an outer surface. An electrical energy storage device is embedded in the layered electrical device, either partially or fully. The electrical energy storage device comprises at least two electrical conducting layers sandwiching a high capacity dielectric, and is connected to other circuitry on the layered electrical device.
Patent TW-418328-B (TW)
Title: Burn-in process for semiconductor devices and control system therefor
Inventor: OKURA KATSUMI
IPC: G01R31/26
Filed: 1999-02-20
Granted: 2001-01-11
Abstract: A controller is connected to two or more burn-in apparatuses. The controller initiates a burn-in treatment in each of the apparatuses and monitors the burn-in treatment of each apparatus. The burn-in treatment of each of the apparatuses may be started and ended at the same time, such as when a last one of the apparatuses has entered a stable phase. Alternatively, the apparatuses may be started at different times, but ended at the same time. Operating multiple burn-in devices at the same time increases production efficiency.
Patent TW-421948-B (TW)
Title: Clock generation method for universal asynchronous receiver-transmitter
Inventor: TSAI SHI-RUNG
IPC: G06F1/08
Filed: 1999-03-19
Granted: 2001-02-11
Abstract: A clock generation method for universal asynchronous receiver-transmitter in which the universal asynchronous receiver-transmitter is configured at the PCI bus compatible interface card. The clock generation method includes the following steps: inputting the PCI bus clock signal from the PCI bus; dividing the PCI bus clock signal with the predetermined divisor and multiplying with the predetermined multiplier so as to get the clock of the universal asynchronous receiver-transmitter in which the multiplier is larger than or equal to 8. The present invention employs the higher frequency signal from PCI bus without the need of an external crystal, and is able to perform a direct frequency division process without having a frequency multiplier circuit so that the frequency error will be smaller.
Patent TW-436718-B (TW)
Title: Factory automation data management system and method
Inventor: GUO WEN-SHENG
Filed: 1999-04-09
Granted: 2001-05-28
Abstract: The factory automation data management system includes a CPU, several production equipment, and several data management equipment. The CPU is used for controlling the motions of the production equipment and the production equipment are used for carrying out the required production processes. Each of the data management equipment corresponds to a production equipment and is connected between the CPU and the corresponding production equipment for controlling, filtering, and recording data transmitted between the CPU and the corresponding production equipment. The factory automation data management method comprises the steps of: (1) capturing the event records and process data coming from a production equipment; (2) identifying and filtering the captured event records and process data before transmitting some of the data to the CPU controlling the motions of the production equipment; (3) capturing the commands coming from the CPU; (4) identifying and filtering the captured commands before transmitting some of the commands to the production equipment.
Patent TW-536405-B (TW)
Title: Agent for anti-osteoporosis
Inventor: YOSHIZANE CHIYO
IPC: A61K31/70
Filed: 1999-04-20
Granted: 2003-06-11
Abstract: An orally or parenterally administrable agent for anti-osteoporosis, comprising trehalose as an effective ingredient and optionally another ingredients, that exerts a satisfactory therapeutic/prophylactic effect on osteoporosis with lesser side effects.
Patent TW-434964-B (TW)
Title: Energy storage system
Inventor: ABRAHAMSSON GORAN
IPC: G01R/
Filed: 1999-09-07
Granted: 2001-05-16
Abstract: A power control system (10) for managing power output from a battery (11) includes an output terminal (12) for delivering power from the battery (11) to a load control means (14) connected to the battery (11) to sense pre-selected operating parameters of the battery (11) and in a first mode of operation to provide power from the battery (11) to the output terminals (12). A first capacitor (15) which stores a predetermined quantity of power is connected between the control means (14) and the battery system (11) supplies its stored power to the battery (11) in response to a command signal from the control means (14) when the control means (14) is in a second mode of operation. A second capacitor (16) which stores a predetermined quantity of power is connected between the control means (14) and the output terminals (12) supplies its stored power to the output terminals (12) in response to a command signal from the control means (14) when the control means (14) is in its second mode of operation.
Patent TW-448514-B (TW)
Title: Semiconductor device and its manufacture, circuit board and electronic apparatus
Inventor: HASHIMOTO NOBUAKI
IPC: H01L21/56
Filed: 1999-07-05
Granted: 2001-08-01
Abstract: The subject of this invention is to provide a semiconductor device and its manufacture as well as circuit board and electronic apparatus, in which the manufacturing process is simplified. The solving means is the followings: a flexible board 10, on which wiring patterns 14 are formed; an anisotropic conductive material 20, which is formed on the face of the wiring patterns 14 formed on the flexible board 10; a semiconductor device 30, which has electrodes 32 connected with the wiring patterns 14 via the anisotropic conductive material 20; the holding members 40, which are pasted on the flexible board 10 and ensure flatness. The anisotropic conductive material 20 is installed at the side that is even more outside than the semiconductor device 30. The holding members 60 are bonded to the flexible board 10 via the anisotropic conductive material 20.
Patent TW-428328-B (TW)
Title: Fabricating method of thin film transistor
Inventor: JIAN TING-SHIAN
IPC: H01L21/336
Filed: 1999-07-30
Granted: 2001-04-01
Abstract: This invention is about fabricating method of thin film transistor. In this invention, the number of mask required for fabricating thin film transistor with tri-layer structure is reduced. In addition, this invention provides the fabricating method of thin film transistor, in which only five or even four of mask processes are required to complete the fabrication of thin film transistor.
Patent TW-425658-B (TW)
Title: Manufacturing method of shallow trench isolation structure
Inventor: LIN JIAN-TING
IPC: H01L21/76
Filed: 1999-09-02
Granted: 2001-03-11
Abstract: This invention relates to the manufacturing method of shallow trench isolation structure, in which trench is formed in the substrate. Then, the insulation layer is formed on the substrate to fill in the trench, in which the insulation layer inside the trench has void.
Patent TW-453907-B (TW)
Title: Method to the reutilization of this permanent magnet
Inventor: REPPEL GEORG WERNER
IPC: H01F1/057
Filed: 1999-09-22
Granted: 2001-09-11
Abstract: The present case discloses a method to reutilize the permanent magnet, which comprises the following steps: to separate the magnetic materials from a compound body under the influence of the gaseous materials. The magnetic materials embattlement crack through its action. Therefore, if it is necessary, before and/or during and/or after the action of the gaseous materials, to effect a mechanical action upon the compound body, which helps the separation process. To re-utilize the acquired magnetic materials to produce a brand new permanent magnet.
Patent TW-571208-B (TW)
Title: Method for trying to supply a potential customer with at least one selected product offer
Inventor: FACCIORUSSO CHRISTIAN
IPC: G06Q30/00
Filed: 1999-10-13
Granted: 2004-01-11
Abstract: A method for trying to supply a potential customer with at least one selected product offer out of a set of available product offers is proposed. The product offers are provided by a product supplier, whereby each available product offer comprises a product description. When the product supplier further has provided at least one supplier constraint concerning the potential customer and the potential customer has provided a customer description and at least one customer constraint concerning the available product offers, the following steps are performed. The customer constraint is compared with the product descriptions in order to find at least one approximate or complete match between them. The supplier constraint is compared with the customer description in order to find at least one at least approximate match between them. Finally only those product offers whose product description at least approximately matches the customer constraint and where the customer description at least approximately matches the supplier constraint, are selected and provided to the potential customer.
Patent TW-432404-B (TW)
Title: Rare earth/iron/boron-based permanent magnet alloy composition
Inventor: YAMAMOTO KENJI
IPC: H01F1/057
Filed: 1999-12-08
Granted: 2001-05-01
Abstract: Disclosed is a rare earth/iron/boron-based permanent magnet alloy composition capable of giving, by a powder metallurgical process, a permanent magnet having excellent coercive force and residual magnetization as well as good squareness ratio of the hysteresis loop. The magnet alloy composition consists of: (a) from 28 to 35% by weight of a rare earth element selected from the group consisting of neodymium, praseodymium, dysprosium, terbium and holmium; (b) from 0.1 to 3.6% by weight of cobalt; (c) from 0.9 to 1.3% by weight of boron; (d) from 0.05 to 1.0% by weight of aluminum; (e) form 0.02 ot 0.25% by weight of copper; (f) from 0.02 to 0.3% by weight of zirconium or chromium; (g) form 0.03 to 0.1% by weight of carbon; (h) from 0.1 to 0.8% by weight of oxygen; (i) from 0.002 to 0.2% by weight of nitrogen; and (j) the balance to 100% by weight of iron and unavoidable impurity elements.
Patent TW-462053-B (TW)
Title: Redundancy circuit and repair method for semiconductor memory device by utilizing ferroelectric memory
Inventor: KYE HOON-WOO
IPC: G11C29/04
Filed: 1999-12-31
Granted: 2001-11-01
Abstract: A redundancy address bit programming circuit including a redundancy memory cell, includes: program pads for providing signals to first and second program nodes; a ferroelectric capacitor programmed according to a bit value corresponding to a defected address, coupled between the first and second nodes; a load capacitor coupled between the second program node and a ground; a power-up signal generator means for generating a power-up signal to be coupled to the first program node, wherein the power-up signal follows a level of a power signal at a beginning of a power signal supply, and is maintained as a ground level during a stable level state of the power signal supply; a latch means for latching the second program node signal at the beginning of the power signal supply and outputting a latched signal during the stable level state of the power signal supply; and a multiplexer for selectively outputting one of an address bit signal and a reversed address bit signal in response to the latched signal.