Patent GB-1433723-A (GB)
Title: Charge transfer devices
IPC: H01L29/70
Filed: 1974-03-12
Abstract: 1433723 Charge transfer devices WESTERN ELECTRIC CO Inc 12 March 1974 [16 March 1973] 10916/74 Heading H1K A charge transfer device comprises a storage medium of a first conductivity type having on one surface a layer of insulation, a first series of electrodes on the layer, a second series of electrodes crossing and insulated from the first series, and localized surface regions in the medium, the arrangement of the electrodes and regions being such as to define transfer paths for mobile charge carries in two non-parallel directions. Fig. 1 is a typical arrangement for conversion from serial input to parallel output with two mutually normal series of electrodes. Strips 15 of ion-implanted P+ material are provided as shown in the N type silicon, running parallel to the respective electrode series to ensure unidirectional charge transfer as described in Specification 1,376,640. In operation minority carriers are injected from a N type source region under electrode 19 in response to input information. Initially the potential distribution provided by pulses on electrodes 12a, 13a and 13b-13d cause injected carriers to collect beneath electrode 12a. They are then transferred to the space between electrodes 12a and 12b by increasing the bias on electrode 13a, the processes being repeated to transfer charges to the right and introduce further charges. Throughout the surface potential between the electrodes 13 due to an ion-implanted N type surface region provided there or over the entire surface, or to suitable doping of the insulation prevents transfer of charge normal to these electrodes. When charges reside under all the spaces between electrodes 12 these are transferred to corresponding positions under electrode 13b by alternately lowering and raising the bias on electrodes 13. A second row of charge packets is then introduced as before and the upward transfer repeated and so on until charges are stored under all of electrodes 13, the charges in each row then being simultaneously transferred to output diffusions under electrodes 20a-20d by the method used in writing in the charges but with electrodes 13a-13d similarly biased so as to retain the charges in their respective rows. In another embodiment for serial to parallel transfer with gate electrodes provided at the input and each output the upper series of electrodes consists of widely spaced sets of pairs of electrodes which are differently pulsed in operation to ensure unidirectional transfer in the direction normal thereto, the associated P+ diffusions being retained only where the electrodes cross to prevent transfer normal thereto during transfer along the rows. In a modification of this, allowing controlled forward and reverse transfer of charge in both directions, the lower series of electrodes are likewise paired, and P + regions provided under the intersections of conductor pairs (Fig. 11, not shown). In a device with a one-phase transfer arrangement for both directions of transfer (Fig. 9) P+ regions 37 are disposed below crossings to prevent transfer of charge through these regions, while unidirectional transfer is ensured by suitably placed N regions 38 as described in U.K. Specification 1,376,640. This may be modified for two-phase operation by providing a third set of electrodes between those of set 33 (Fig. 10, not shown).