baber/WOPTO huggingface dataset:
Patent TW-428074-B (TW)
Title: Filling containers with gas
Inventor: LEE ROBERT MICHAEL
IPC: F17C5/06
Filed: 1999-11-03
Granted: 2001-04-01
Abstract: A gas container filling system initially fills a 1 litre volume, extremely accurately via a pressure controller. This pressure controller remains in control, due to a thermal mass flow controller down stream, providing a constant 50 cc/min leak. This matches the minimum turndown of the pressure controller ensuring the valve never closes completely and the controller does not saturate. A fill is initiated from a touch screen, which opens the fill valve and decants from the fixed volume (which is accurately held at the set pressure) to the micro-cylinder cylinder. This results in consistent fill times of less than 0.15 seconds and consistent accuracy of +/-0.35% at 40 barg (i.e. 39.9 - 40.1 barg).
Patent TW-477824-B (TW)
Title: Thin film fabrication method and thin film fabrication apparatus
Inventor: MIZUNO SHIGERU
IPC: C23C16/52
Filed: 2000-02-21
Granted: 2002-03-01
Abstract: While improving the coverage of the inner surfaces of very fine holes, to suppress a fall in the film deposition rate and to avoid harm to the quality of thin films which are produced or to manufactured device characteristics, etc. A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 caused the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve im pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.
Patent TW-521040-B (TW)
Title: Fully integrated thermal inkjet printhead having thin film layer shelf
Inventor: DAWAMURA NAOTO A
IPC: B41J2/05
Filed: 2000-03-02
Granted: 2003-02-21
Abstract: Described herein is a monolithic printhead formed using integrated circuit techniques. Thin film layers (24, 40-50), including ink ejection elements (24), are formed on a top surface of a silicon substrate (20). The various layers are etched to provide conductive leads (25) to the ink ejection elements (24). At least one ink feed hole (26) is formed through the thin film layers for each ink ejection chamber (30). A trench (36) is etched in the bottom surface of the substrate (20) so that ink (38) can flow into the trench (36) and into each ink ejection chamber (30) through the ink feed holes (26) formed in the thin film layers. The trench (36) completely etches away portions of the substrate (20) near the ink feed holes (26) so that the thin film layers form a shelf (45) in the vicinity of the ink feed holes (26). In one embodiment, the shelf (45) supports the ink ejection elements (24). An orifice layer (28) is formed on the top surface of the thin film layers (24, 40-50) to define the nozzles (34) and ink ejection chambers (30).
Patent TW-495616-B (TW)
Title: Test device and method for electrically testing electronic device
Inventor: FURUKAWA YASUO
IPC: G01R31/3167
Filed: 2000-03-17
Granted: 2002-07-21
Abstract: A testing device for electrically testing electronic device 100 (device to be tested) is disclosed, which comprises a pattern memory 13A, a pattern generator 13, a first filter 20B, a pin electronics 19, the pattern memory 13A stores data for defining the test patterns supplied to a testing electronic device 100. The pattern generator 13 generates plural testing patterns to be inputted to plural input pins of the testing electronic device 100 by a digital signal on the basis of the data stored in the pattern memory 13A. The first filter converts at least one testing pattern of the testing patterns into an analog signal. The pin electronics 19 supplies the testing patterns which include the testing pattern of the analog signal to the testing electronic device 100.
Patent TW-472136-B (TW)
Title: Ranging system
Inventor: WILLIAMS ANTHONY PETER
IPC: G01C3/00
Filed: 2000-07-10
Granted: 2002-01-11
Abstract: A ranging system comprises optically-distinguishable portions (54, 56) located on a first layer (52). Another layer (58) is provided distant from the layer (52) again having optically-distinguishable portions (60,62). One of the optically-distinguishable portions (62) on layer (58) is at least substantially transparent. When an observer's eye (50) is at the correct range the portions (56) of the first layer (52) are fully visible via the transparent portions (62) of layer (58). If the user is too close (b) or too far away (c) then the user will not see the portions (56) in their entirety. The user thus knows when he or she is at the correct range. The invention may also be used to provide correct alignment between a user and an apparatus. The invention has particular, but not exclusive, application to ranging for apparatus which takes a picture of a user.
Patent TW-I290146-B (TW)
Title: Binding moieties for fibrin
Inventor: WESCOTT CHARLES R
IPC: C12N7/00
Filed: 2000-07-28
Granted: 2007-11-21
Abstract: The present invention provides binding moieties for fibrin, which have a variety of uses wherever detecting, isolating or localizing fibrin, and particularly fibrin as opposed to fibrinogen, is advantageous. Particularly disclosed are synthetic, isolated polypeptides capable of binding fibrin and recognizing the form of polymerized fibrin found in thrombi. Such polypeptides and disclosed derivatives are useful, e.g., as imaging agents for thrombi. Preferred embodiments useful as magnetic resonance imaging (MRI) contrast agents useful for detecting a thrombus in vivo are also disclosed.
Patent TW-463309-B (TW)
Title: A titanium-cap/nickel (platinum) salicide process
Inventor: LEE KONG HEAN
IPC: H01L21/336
Filed: 2000-09-13
Granted: 2001-11-11
Abstract: A method of forming silicide, comprising the following steps. A semiconductor substrate having at least one device thereon having exposed silicon is provided. A layer of nickel-platinum (Ni(Pt)) alloy is deposited at least over the device. A titanium (Ti) capping layer is deposited over the Ni(Pt) alloy layer to form a Ti capped-Ni(Pt) film. The structure is then subjected to a rapid thermal anneal (RTA) to form a silicide over the exposed silicon.
Patent TW-446544-B (TW)
Title: Method for forming delicate pattern on food
Inventor: CHANG MING-KUANG
IPC: A23P1/08
Filed: 2000-09-13
Granted: 2001-07-21
Abstract: The present invention relates to a method for forming a delicate pattern on food, which mainly comprises transporting a food, such as candy or biscuit, in a specified direction by a transport device, in which the transport device is installed with a plurality of printing elements which separately store a pigment of a different color, each printing element is installed with a roller or a screen, and the roller is synchronous to the transport device; printing a pattern with color on the food by installing an uneven pattern on a roller, or using a sensor to stop the transport device and allow the permeation layer of the screen of a printing element to transfer a pattern with color on the food; and installing a forming device on the transport device for forming the printed pattern with color.
Patent TW-497313-B (TW)
Title: Battery pack protection circuit
Inventor: PETERZELL PAUL E
IPC: H02J7/00
Filed: 2000-10-21
Granted: 2002-08-01
Abstract: A battery protection circuit (10) for an external battery pack (14) has a switch (40) for controlling connection of a battery output to a load, and a detector (44) for detecting a resistance at a load output terminal. A first comparator (50) compares the detected resistance (Rp) to a predetermined maximum value, and a second comparator (54) compares the detected resistance (Rp) to a predetermined minimum value. If the detected resistance is in the range between the minimum and maximum values, a control signal (42) is produced to enable connection of the battery output to the load. If the detected resistance is outside the range, the switch (40) is disabled and no current can flow to the load.
Patent TW-502154-B (TW)
Title: Power-saving apparatus and method for computer peripheral devices
Inventor: PARK KIL-SOO
IPC: G06F1/32
Filed: 2000-11-03
Granted: 2002-09-11
Abstract: The present invention relates to power-saving apparatus and method for computer peripheral devices, which comprises a heater 10; a control unit 20 for detecting at least two or more power-saving commands, outputting a first power-saving control signal S1 regardless of the kind of a power-saving command if the power-saving command is detected, and outputting a second power-saving control signal S2 at the same time with outputting a start control signal S3 for a certain time period if a recovery command is detected; a power supply unit 30 for supplying rated voltages required for peripheral devices; a power switching circuit 40 for cutting off all the rated voltages supplied to the peripheral devices including the heater 10 except for the control unit 20 if the first power-saving controls signal S1 is inputted from the control unit 20, and starting the supply of all the rated voltages cup off if the second power-saving control signal S2 is inputted from the control unit 20; and a quick start circuit 50 for supplying to the heater 10 a quick start voltage V2 higher than a rated voltage V1 for a certain time period if the start control signal S3 is inputted from the control unit 20, so that the power consumption is minimized by cutting off all the voltages supplied to the peripheral devices including the heater regardless of the kind of the power-saving command if the power-saving command is detected and the computer peripheral devices are normally operated in a short time period by rapidly heating the heater if the recovery command is detected.
Patent TW-I272329-B (TW)
Title: Process for removal of odors from silicones
Inventor: DORN STEVEN B
IPC: C08G77/34
Filed: 2000-11-08
Granted: 2007-02-01
Abstract: A process for removing malodorous elements from silicone dry cleaning solvents, comprising contacting the used silicone solvent with adsorbent to remove the odor, and separating the silicone solvent.
Patent TW-487939-B (TW)
Title: Electric component, emergency stopping device and communication device equiped with such electric component
Inventor: FUJITA TOSHIHIRO
IPC: H01H13/00
Filed: 2000-11-10
Granted: 2002-05-21
Abstract: The present invention provides an electric part, which can be managed globally using a network, and can save space and directly respond the operator's operation to the corresponding device for driving the switch device substantially. A switch assembly (1) comprises: a push-button section (52) and a push-button body (53) used as an operation transmitting member, an LED box (54) and a contact-making contact (56) used as a direct functioning member, and a communication-function incorporating contact (communications contact) (55) used as an information input/output functioning member. These components are permitted to be connected with each other. Therefore, the switch assembly can respond to an operation given to the push-button body (52) by causing the contact-making contact (56) to provide an output for switching between a conductive state and a non-conductive state and by causing the communications contact (55) to output an information signal to a network.
Patent TW-535292-B (TW)
Title: Method for manufacturing a thin-film transistor
Inventor: LEE JEONG-NO
IPC: H01L21/28
Filed: 2000-11-13
Granted: 2003-06-01
Abstract: A method for manufacturing a thin film transistor includes the steps of forming a channel region on a surface of a substrate, depositing an insulating layer on the surface of the substrate while covering the channel region and patterning the insulating layer such that a portion of the channel region is exposed, depositing a silicon layer on the insulating layer, depositing a metal layer on the silicon layer and etching the silicon and metal layers to define source, drain and gate electrode sections, doping positive ions on a portion corresponding to a MOS circuit portion, depositing an intermediate insulating layer on the metal layer while covering the source, drain and gate electrode sections and patterning the intermediate insulating layer to form a plurality of contact holes, and depositing an electrode material on the intermediate insulating layer and patterning the electrode material to define a pixel electrode section and a wire section.
Patent TW-508617-B (TW)
Title: Temperature control system for plasma processing apparatus
Inventor: BAILEY ANDREW D III
IPC: H05H1/46
Filed: 2000-11-15
Granted: 2002-11-01
Abstract: A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.
Patent TW-I241448-B (TW)
Title: Semiconductor device provided with conductive layer, liquid crystal display, and manufacturing method thereof
Inventor: KUBOTA TAKESHI
IPC: G02F1/1368
Filed: 2000-11-20
Granted: 2005-10-11
Abstract: A semiconductor device and a liquid crystal display are provided capable of stabilizing the threshold voltage of a thin-film field effect transistor while enhancing durability and reliability of a capacitor having as a component a conductive layer formed by the same layer as the channel region of the thin-film field effect transistor. The semiconductor device is provided with thin-film field effect transistor and conductive layer. It includes a substrate, semiconductor layers, conductive layer, and a dielectric film. Semiconductor layers includes channel regions of thin-film field effect transistors formed on substrate. Conductive layer is formed on substrate originally in the same layer as semiconductor layers. Dielectric film is formed on conductive layer. The conductive impurity concentration of channel regions is at most 10<16> atoms/cm<3>. The conductive impurity concentration of dielectric film is at most 10<17> atoms/cm<3>.
Patent TW-I256965-B (TW)
Title: Coating composition for forming insulating films, non-oriented electrical steel sheet with the coating composition coated thereon, and method for forming the insulating films on the steel sheet
Inventor: YOO YOUNG-JONG
IPC: C09D183/04
Filed: 2000-12-08
Granted: 2006-06-21
Abstract: A coating composition for forming insulating films, a non-oriented electrical steel sheet with the coating composition coated thereon, and a method for forming the insulating films on the steel sheet, are disclosed. The coating composition includes the following ingredients for each 100g of phosphoric acid of a primary aluminum phosphate solution. That is, they are 28 to 98g (solid weight) of an acid-soluble emulsion type acrylic-styrenic copolymer resin, 6 to 18g of zinc nitrate, 4 to 13g of a silicon additive, 18 to 35g of ethylene glycol, and 3 to 11g of nonionic surfactant. The non-oriented electrical steel is coated with the above coating composition. The coating composition is superior in the roll coating workability and in the film characteristics, and further, it is environmentphilic and has a superior aesthetics.
Patent TW-572853-B (TW)
Title: A production method for the melted titanium containing in a high-pressure aqueous
Inventor: HIRATA YOSHIHIRO
IPC: A61K33/24
Filed: 2000-12-27
Granted: 2004-01-21
Abstract: This invention provides a method and apparatus for manufacturing titanium-dissolved water with molten titanium dissolved therein, the molten titanium being titanium metal melted by the combustion gas resulting from the combustion of a mixed gas of oxygen and hydrogen in high-pressure water, as well as the resultant titanium-dissolved water and health articles, medical articles and cosmetics utilizing the physiologically activating effect of the high-function water containing titanium. <IMAGE>
Patent TW-I280240-B (TW)
Title: Substituted 8-arylquinoline phosphodiesterase-4 inhibitors
Inventor: DESCHENES DENIS
IPC: C07D215/12
Filed: 2000-12-21
Granted: 2007-05-01
Abstract: Novel substituted 8-arylquinolines, wherein the aryl group at the 8-position contains a substituent substituted-alkenyl group, are PDE4 inhibitors.
Patent TW-476101-B (TW)
Title: Chip package method
Inventor: WU JIAN-CHANG
IPC: H01L21/00
Filed: 2000-12-22
Granted: 2002-02-11
Abstract: The present invention uses the robot in a simply single up-and-down motion to transfer the chip on the chip expansion unit to the target unit or working substrate. This saves both the time of robot for twice up-and-down motion as that of the prior art and the time of swinging in order to speed up the mass production.
Patent TW-I236485-B (TW)
Title: High-molecular-weight crosslinked polyvinyl butyrals, process for their production, and their use
Inventor: PAPENFUHS BERND
IPC: C08L29/14
Filed: 2001-04-12
Granted: 2005-07-21
Abstract: The present invention relates to high-molecular-weight, crosslinked polyvinyl butyrals obtainable by crosslinking a polyvinyl butyral with at least one di- and/or polycarboxylic acid or derivatives of these as crosslinking reagent, to a process for their production, and to their use.
Patent TW-550628-B (TW)
Title: Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
Inventor: WILSON GREGORY J
IPC: G06F19/00
Filed: 2001-05-24
Granted: 2003-09-01
Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.
Patent TW-516176-B (TW)
Title: Method for etching dual damascene structures in organosilicate glass
Inventor: FLANNER JANET M
IPC: H01L21/311
Filed: 2001-06-13
Granted: 2003-01-01
Abstract: Method for forming dual damascene etch structures in wafers, and semiconductor devices formed according to the method. The present invention utilizes the two-step etch process to form dual damascene structures in organosilicate dielectric layers. According to one embodiment of the present invention, a first etch step is undertaken utilizing a first, low selectivity etchant, which etches completely through the trench dielectric and almost completely through the via dielectric, leaving a small remainder of the via dielectric over the barrier layer protecting metalized objects protected by the barrier layer. After the first etch step, a second etch step is performed utilizing a second, highly selective etchant. This second etch step is conducted with little damage to the barrier layer. An alternative embodiment of the present invention contemplates a ""trench-first"" etch strategy.
Patent TW-501274-B (TW)
Title: Split-gate flash memory and manufacturing method thereof
Inventor: HSIEH CHIA-TA
IPC: H01L27/115
Filed: 2001-08-21
Granted: 2002-09-01
Abstract: A split-gate flash memory comprises a substrate, a floating gate, a control gate and a stepped substrate, wherein the floating gate is on the substrate and is isolated from the substrate; the control gate is on the floating gate and is isolated from the floating gate. The stepped substrate is on the substrate, connects with the substrate and is near the floating gate. When executing the write operation, the hot electrons inject into the floating gate through the stepped substrate in the direction parallel to the substrate.
Patent TW-518401-B (TW)
Title: Divided pressure vessel apparatus for carbon dioxide based systems and methods of using same
Inventor: WORM STEVE
IPC: A23L27/10
Filed: 2001-10-12
Granted: 2003-01-21
Abstract: A method of utilizing a divided pressure vessel in a processing system employing a carbon dioxide based solvent includes transferring a first carbon dioxide based treating solution from a first liquid chamber in a divided pressure vessel having a plurality of liquid chambers to a processing vessel, returning the first treating solution from the processing vessel to the divided pressure vessel, transferring a second carbon dioxide based treating solution having a composition different from the first treating solution from a second liquid chamber in the divided pressure vessel to a processing vessel, and returning the second treating solution from the processing vessel to the divided pressure vessel. A divided pressure vessel may allow multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel while maintaining the different chemical compositions of the multiple solvent baths. Thus, such divided pressure vessels may provide the improved operational efficiency of a carbon dioxide based system having multiple solvent baths while decreasing the capital costs that may be associated with such systems.
Patent TW-515051-B (TW)
Title: Self-aligned non-volatile memory cell
Inventor: LOJEK BOHUMIL
IPC: H01L21/28
Filed: 2001-11-22
Granted: 2002-12-21
Abstract: Disclosed is a self-aligned non-volatile memory cell comprising a small sidewall spacer electrically coupled and being located next to a main floating gate region. Both the small sidewall spacer and the main floating gate region are formed on a substrate and both form the floating gate of the non-volatile memory cell. Both are isolated electrically from the substrate by an oxide layer which is thinner between the small sidewall spacer and the substrate; and is thicker between the main floating gate region and the substrate. The small sidewall spacer can be made small; therefore, the thin oxide layer area can also be made small to create a small pathway for electrons to tunnel into the floating gate.
Patent TW-508904-B (TW)
Title: Surface acoustic wave filter and its manufacturing method
Inventor: HUNG MAU-FENG
IPC: H03H9/15
Filed: 2001-11-30
Granted: 2002-11-01
Abstract: A kind of surface acoustic wave filter (SAW Filter), particularly the SAW Filter having the combination of microwave microstrip and interdigital transducers, and its manufacturing method are disclosed in the present invention. The invented SAW filter at least includes the followings: a piezoelectric substrate; the interdigital transducers, which locate at the front side of the piezoelectric substrate; coupled microstrip square open-loop resonators, which are coupled with the interdigital transducers; and the grounding surface, which locates at the rear side of the piezoelectric substrate. In the invention, a mutual relationship and the interaction effects generated between the surface acoustic wave and the electromagnetic wave within the microwave range are used to greatly increase the central frequency and the frequency bandwidth of the SAW filter. In addition, by reducing the insertion loss, the invention is capable of providing excellent wave filtering function and wide operation frequency bandwidth when it is applied in high frequency operation.