baber/WOPTO huggingface dataset:
Patent TW-452575-B (TW)
Title: New Α-aminoacetophenone photoinitiators and photopolymerizable compositions comprising these photoinitiators
Inventor: OHWA MASAKI
IPC: G03C1/73
Filed: 1997-11-08
Granted: 2001-09-01
Abstract: Compounds of the formula I, wherein Ar2 is phenylene or biphenylene, both radicals optionally substituted by -OR7; X is -O-, -S- or -N(R6)-; Y is C1-C12alkyl, which is unsubstituted or substituted by 1 to 5 OH, or SH, or Y is C2-C20alkyl, which is interrupted by 1 to 9 -O-, -N(R6)-, or -S-, wherein the interrupted C2-C20alkyl can further be substituted by 1 to 5 SH, or Y is benzyl which is unsubstituted or substituted once or twice by -CH2SH and said benzyl may further be substituted by C1-C4alkyl, or Y is phenyl substituted by SH, or Y is a group; q is 1 or 2; R1 and R2 independently of one another are C1-C8alkyl, C3-C6alkenyl, or phenyl-C1-C3-alkyl; R3 and R4 are C1-C12alkyl, or R3 and R4 together are C3-C7alkylene, which can be interrupted by -O-, and which C3-C7alkylene can be substituted by OH, SH or CH2SH; R6 is hydrogen, or C1-C12alkyl; R7 is C1-C12alkyl; provided that at least one of the radicals Ar2, R1, R2, R3, R4, or Y is substituted by 1 to 5 SH groups; or an acid addition salt of a compound of the formula I, are photoinitiators for the polymerization of ethylenically unsaturated compounds.
Patent TW-371789-B (TW)
Title: Method for fabricating a semiconductor device
Inventor: MAEDA SHIGENOBU
IPC: H01L27/12
Filed: 1997-11-18
Granted: 1999-10-11
Abstract: For a semiconductor device having metal silicide protection film, the present invention provides a method for fabricating a semiconductor to avoid the derivative problems relative to over-etching during the formation process of metal silicide protection film. First, to create a thin silicon dioxide film in the protection region (PR) and the original region (OR), then using ion implantation method to plant the N type impurity via the silicon dioxide film (8) into the silicon dioxide (8) to build automatic self-aligned source/drain region on the surface of SOI film (3).
Patent TW-342433-B (TW)
Title: Close and open device for fluids
Inventor: OMI TADAHIRO
IPC: F16K27/00
Filed: 1997-11-19
Granted: 1998-10-11
Abstract: A close and open device for fluids, which comprises: a plurality of valves, inlets and outlets installed thereunder; and a valve installation base where the valves arranged in one direction are removably fixed from above to the base; which is characterized in that: the valve installation base comprises an inflowing passage structure having a path connected to inlet of a valve provided at one end, one or more interconnecting passage structures having a path interconnecting outlet and inlet of two respectively adjacent valves, an outflowing passage structure having a path connected to outlet of a valve provided at the other end.
Patent TW-510937-B (TW)
Title: Dyeing of textiles
Inventor: COLLINS GEOFFREY WILLIAM
IPC: D06P5/08
Filed: 1998-02-26
Granted: 2002-11-21
Abstract: Cellulosic fibres or fabrics are dyed using pre-metatllized acid dye by pretreating the fabric with a cationic agent having a plurality of cationic centres and optionally aftertreating the dyed material with a cationic polymer. The cationic polymer is desirably a polyquaternary amine material especially a poly(DADMAC) or polyvinylpyridine. Material dyed by the method has a ""washed out"" appearance similar to fabrics dyed using the ""Jarofast"" process, but the availability of a wide range of pre-metallized dyes gives a wider colour range, and the method enables a wider range of substrates to be dyed successfully, including lyocell fibre materials e.g. those sold under Courtauld's trademark ""Tencel"" and blend/union materials with polyamides, easier processing and superior wash and light fastness.
Patent TW-448557-B (TW)
Title: Method for forming CMOS with electrostatic and hot carrier protection capability
Inventor: WU SHIE-LIN
IPC: H01L23/60
Filed: 1998-03-09
Granted: 2001-08-01
Abstract: A method for forming CMOS with electrostatic and hot carrier protection capability comprises: forming an isolation region on a substrate, the isolation region divides the substrate into a P-type region, an N-type region and an electrostatic protection region; forming a gate structure in each region; doping the N-type region and the electrostatic protection region, and forming a first doped region in one of the two regions in the substrate without being covered by the gate structure; doping the P-type region, the electrostatic protection region, and forming an anti-tunneling region under the gate structure in the substrate of the P-type region; forming a second doped region under the gate structure in the substrate of the electrostatic protection region; then, forming a sidewall structure on the sidewall of the gate structure; doping the N-type region and the electrostatic region to form an N-type junction region under the region of the substrate without being covered by the gate structure; then, doping the P-type region to form a P-type junction region under the region of the substrate without being covered by the gate structure; and finally performing a thermal process to diffuse ions of the first type, ions of the second type, ions of the third type, and ions of the fourth type.
Patent TW-520290-B (TW)
Title: A liquid composition of immunoglobulin for intravenous administration and a method for the preparation thereof
Inventor: MCINTOSH RONALD VANCE
IPC: C07K16/06
Filed: 1998-03-19
Granted: 2003-02-11
Abstract: The present invention relates to a liquid composition for intravenous administration which comprises an aqueous solution of immunoglobulin and to its preparation. The liquid composition is formulated so as to be stable upon storage such that the immunoglobulin does not substantially aggregate nor degrade and maintains acceptable levels of anti-complementary activity, PKA activity and kallikrein activity during storage for an extended period at a temperature in the range of 4 DEG C to 25 DEG C.
Patent TW-373239-B (TW)
Title: Method of improving optical vicinity reaction
Inventor: CHEN KUEI-SHUN
IPC: H01L21/027
Filed: 1998-04-02
Granted: 1999-11-01
Abstract: The method of improving optical vicinity reaction in this invention comprises the following steps: first to form plurality of main images to define image on a light cover; after that forming plurality of first minor image at the vicinity of main image at corner; finally forming second minor image at plurality of main image in between or ring main image of zone. This invention provides light lid for improving optical vicinity reaction, lid cover includes: to define plurality of main image of the defined image on the light lid; plurality of first image vicinity to the main image corner; and second minor image to the plurality of main images or round shape main image in the zone.
Patent TW-432582-B (TW)
Title: Electrostatic support assembly having an integral ion focus ring
Inventor: ROSS ERIC D
IPC: H01L21/205
Filed: 1998-05-12
Granted: 2001-05-01
Abstract: An electrostatic support assembly for supporting a substrate. The support assembly includes a non-metallic body having a support surface for supporting the substrate and an integral peripheral outer portion extending outwardly from and substantially surrounding the support surface of the substrate. The support assembly also includes at least one electrode carried by the non-metallic body for electrostatically coupling a substrate to the support surface of the non-metallic body and a base coupled to the underside of the non-metallic body for the transfer of heat between the non-metallic body and the base.
Patent TW-400548-B (TW)
Title: The method of improving the uniformity of the thin film's thickness
Inventor: LU TSUNG-LIN
IPC: H01L21/316
Filed: 1998-06-30
Granted: 2000-08-01
Abstract: This manufacture method is to make use of PECVD system in the thin-film deposition. Before the thin-film deposition, use the plasma to heat the shower head of the PECVD system into the production temperature, coordinate it with the heater block to make the whole system (including the shower head) reaching a stable temperature, then input the process gas through the shower head to form thin film on the chip in order to solve the problem of non-uniformity of the average thickness of the thin film between the chips. If proceed simultaneously the step of warming up the heater block and the plasma heating of the shower head after the PECVD system PM( preventive maintenance) or after cleaning, and in the meanwhile the plasma could also proceed heating toward the heater block, the time of warming up the heater block in the PECVD system (warm-up time) could be reduced.
Patent TW-406059-B (TW)
Title: Method of water electrolysis
Inventor: SAWAMOTO ISAO
IPC: C02F1/42
Filed: 1998-07-27
Granted: 2000-09-21
Abstract: A method of water electrolysis for producing acidic water and alkaline water is disclosed, which is effective in preventing the dissolution of electrode material in the acidic water, etc. attributable to a reverse current flowing in a power supply cutoff state and also in preventing electrode deactivation caused by the electrode material dissolution. This enables the electrolytic cell to be operated stably over a long period of time to yield high-purity acidic and alkaline waters. An electrolytic cell 1 partitioned into an anode chamber and a cathode chamber with a cation-exchange membrane 2 as a solid electrolyte is used to electrolytically produce acidic water and alkaline water. A voltage of 1.2 V or higher and/or a current of 20 mA/dm<2> or higher is applied between the anode 7 and the cathode 8 when the electrolytic cell is in a power supply cutoff state.
Patent TW-385542-B (TW)
Title: Method for making deep trench capacitor by two stage ion implantment
Inventor: SHIAU JIA-SHUEN
IPC: H01L27/108
Filed: 1998-07-31
Granted: 2000-03-21
Abstract: A method for making deep trench capacitor by two stage ion implantment is provided: first, p-well region is formed and deep trench is etched on the semiconductor substrate, and then within the substrate by side for future capacitor source is independently proceeded a high and a low energy implantment by two stage ion implantment, this step is the key point for the invention, the deeper doped region formed by high energy ion implantment may prevent deep trench capacitor collar dielectric layer with no wholly insulation from a current leakage phenomenon, the other hand, shallower doped region formed by lower energy ion implantment may reduce the contact resistance of shallow trench capacitor, a source structure of the transistor is formed at the same side of the doped region, and the third polysilicon layer of so called deep trench capacitor and the doped region is provided with an electric contact.
Patent TW-418144-B (TW)
Title: Plasma arc spot welding of car body steels containing vaporizable ingredients
Inventor: OROS ALVIN KENNETH
IPC: B23K10/02
Filed: 1998-08-24
Granted: 2001-01-11
Abstract: Method of one side spot welding of a metallic auto body construction containing vaporizable coatings or ingredients, the construction having overlapping metal plys, comprising: impinging a plasma column on a selected spot of one side of the construction, the plasma column being generated by passing a plasma gas at a predetermined electrical current path; shielding the plasma column in an inert gas containing at least 5-35% by volume of oxygen, the shielded plasma column melting at least the metal on one ply at the spot while the oxygen increases the fluidity and wetablility of the melted metal and reduce its surface tension allowing any vaporization of the ingredients to quiescently escape through the molten metal; and ceasing plasma arc impingement for allowing the molten metal to solidify and complete the spot weld.
Patent TW-510145-B (TW)
Title: Safe and high-performance ceramic resistive heating plate
Inventor: WU JIA-SHIUNG
IPC: H05B3/20
Filed: 1998-09-05
Granted: 2002-11-11
Abstract: The present invention relates to a safe and high-performance ceramic resistive heating plate. In particular, the invention relates to a ceramic resistive heating plate capable of raising safety and increasing efficiency. In the invention, the protruding insulation portion is extended and disposed at the periphery of the flat ceramic resistive heating single body, which is disposed inside the heating plate, so as to increase the electricity-climbing distance and to avoid the electric corona or even the generation of spark for assuring the utilization safety. In addition, the main purpose of decreasing the production cost, increasing the efficiency and avoiding the deformed burst due to thermal vibration is obtained.
Patent TW-495386-B (TW)
Title: Process for endothermic heating of catalytic reactors
Inventor: STABILE ALDO
IPC: B01D53/86
Filed: 1998-10-14
Granted: 2002-07-21
Abstract: Process for heating catalytic reactors (40) obtained by transformation of electric energy into thermal energy by means of a highly electrically conductive metal band (42) bent in the form of a serpentine, sunk into the mass of the supporting catalyzing substance (43) inside the reactor (40), electrically insulated (56-59, 71-73) from its structure and having its ends (46, 47) connected, in a closed circuit, to a generator (50) of electric current.
Patent TW-391051-B (TW)
Title: Method for manufacturing shallow trench isolation structure
Inventor: HUNG YUN-DING
IPC: H01L21/762
Filed: 1998-11-06
Granted: 2000-05-21
Abstract: The present invention provides a method for manufacturing shallow trench isolation structure. A doped area is formed on the top corner of a trench. In the process for forming liner oxide layer, the doped area on the top corner of the trench is conductive to the oxidation reaction. Therefore, the thickness of the liner oxide layer on the top corner of the trench is equal to that of another liner oxide layer, so as to avoid a kink effect.
Patent TW-416068-B (TW)
Title: Shell transformer/reactor
Inventor: SCHUTTE THORSTEN
IPC: H01F27/32
Filed: 1999-03-24
Granted: 2000-12-21
Abstract: A shell transformer/reactor comprises at least one electric winding (4) surrounded by a shell (12) of magnetizable material. The electric winding comprises a high voltage cable arranged to substantially enclose the electric field generated by a current in the winding. By a method for producing such a shell transformer/reactor, the electric winding (4) is wound in a support construction (2).
Patent TW-432195-B (TW)
Title: Plate-shaped heat pipe and implementation structure thereof
Inventor: IKEDA MASAMI
IPC: F28D15/02
Filed: 1999-04-13
Granted: 2001-05-01
Abstract: The present invention provides a plate-shaped heat pipe which can be assembled with low cost and is reliable in operation. The plate-shaped heat pipe comprises: (1) a container portion comprising a plate with a surface attached to a cooled part provided on a substrate, an additional plate facing said plate, and a chamber portion formed by said plate and said additional plate; (2) edge portions formed by overlapping said plate and said additional plate positioned on the outside part of said container portion, a bent portion formed by bending said overlapped edge portions into one side to maintain said chamber in airtight status; and (3) operating fluid sealed within said chamber portion.
Patent TW-410474-B (TW)
Title: Method for manufacturing embedded ROM with multiple metal layers capable of reducing the turn around time
Inventor: SHIU SHING-REN
IPC: H01L21/8246
Filed: 1999-05-26
Granted: 2000-11-01
Abstract: There is disclosed a method for manufacturing embedded ROM with multiple metal layers capable of reducing the turn around time. The method forms a dielectric layer on the substrate after completing the manufacturing process for the memory cell region and the gate and source/drain areas of the peripheral circuit region, and the bottom-layer metal interconnect of the peripheral circuit region. Then, the portion of the dielectric layer on the memory cell region is removed, such that the dielectric surrounds the edge of the memory cell region and the sidewall thereof is in a sloped manner. A via opening is defined in the dielectric layer of the peripheral circuit. Then, a metal barrier layer is formed on the substrate for providing a semi-finished product. Subsequent, according to the encoding program of a customer, a part of the metal barrier layer is removed, and an encoded ion implantation step is performed. Next, a wire line is formed in the memory cell region for electrically connecting to the source/drain area, and a topmost metal interconnect is formed on the peripheral circuit region. Finally, a passivation layer is formed on the substrate.
Patent TW-401290-B (TW)
Title: Anchor, tool and method and apparatus for emplacing anchor in a borehole
Inventor: LI LEHMANN K
IPC: A61B17/04
Filed: 1999-06-01
Granted: 2000-08-11
Abstract: A method for emplacing a medical anchor in a borehole in biological tissue, the method comprising the steps of providing a borehole in the biological tissue, inserting the anchor into the borehole with a tool such that the anchor is affixed to the tool and in approximate alignment with the borehole, manipulating the tool, the step of manipulating the tool causing the anchor to pivot about an axis perpendicular to the borehole and further comprising rotating the anchor in the borehole about the axis of the borehole, thereby causing the anchor to move outwardly in the borehole to engage a wall of the borehole and cut into the wall of the borehole and secure the anchor in a final position in the borehole such that the anchor is disposed approximately perpendicular to the axis of the borehole; and removing the tool from the borehole by moving the tool proximally in the borehole, thereby separating the anchor from the tool and leaving the anchor secured in the borehole.
Patent TW-553921-B (TW)
Title: Method for producing microbial organic/inorganic composite fertilizer
Inventor: LIOU WEN-JR
IPC: C05F11/04
Filed: 1999-06-07
Granted: 2003-09-21
Abstract: A method for producing a microbial organic/inorganic composite fertilizer comprises: using natural and industrial and agricultural waste materials as raw material; partially decomposing the raw material into a carbon source and a nitrogen source; using the carbon and nitrogen sources to grow yeast fungi or beneficial fungi as organic nitrogen nutrient in a composite fertilizer; using the carbon and nitrogen sources to grow melanomyces in order to activate a portion of the bound phosphor in a lattice status in a phosphor mineral powder into a fast effective phosphor as a phosphor nutrient in the composite fertilizer; and using the carbon source and gas nitrogen or an organic nitrogen to grow silicate bacteria in order to activate minerals containing lattice-state potassium oxide, e.g. potash feldspar, alunite powder, into a fast effective potassium, thereby forming a microbial organic/inorganic composite fertilizer.
Patent TW-406189-B (TW)
Title: Filtration and extraction device and method of using the same
Inventor: CROSBY MARK A
IPC: B01D35/02
Filed: 1999-06-24
Granted: 2000-09-21
Abstract: The present invention involves a simple, disposable, manual filtration and extraction device and method of use that provides a sample directly to an analytical method. The device is capable of providing a clarified liquid ready for analysis or disposal as appropriate for the specific analyte of interest, and is capable of capturing particulate materials and allowing for further extraction of those particles directly with the device. Once extracted, the device will deliver a liquid containing the analyte of interest to an analytical method. The filtration and extraction device includes a pliant body having an open top end and an internal wall defining an inner chamber. A sealing mechanism is adapted to seal the open top end of the body. A gradient filter assembly including at least one filter is supported by a support assembly carried by the body. The pliant body is adapted to be squeezed by a user's fingers so as to impart a positive pressure in the chamber sufficient to cause a fluid in the chamber to flow through the filter assembly.
Patent TW-432267-B (TW)
Title: Method and sensor for detecting clogging of pressure-type flow rate controller
Inventor: OHMI TADAHIRO
IPC: G05D7/06
Filed: 1999-08-17
Granted: 2001-05-01
Abstract: A method and apparatus for detection of the clogging of the orifice by measuring the upstream side pressure without breaking up the piping system in a flow rate control unit using an orifice, so as to extend the life of the flow control unit and enhance its safety. The upstream pressure P1 is maintained about two or more times higher than the downstream pressure P2. The downstream flow rate QC is calculated from the equation QC=KP1 (K: constant) and the control valve (CV) is controlled by the difference signal QY between the calculated flow rate QC and the set flow rate QS. The apparatus comprise: a storage memory M memorizing standard pressure attenuation data Y(t) of the upstream pressure P1 measured with the flow rate switched from the high set flow rate QSH to the low set flow rate QSL, with the orifice (2) not clogged; a pressure detector (14) for determination of the pressure attenuation data P(t) of the upstream pressure P1 with the flow rate switched from the high set flow rate QSH to the low set flow rate QSL, with the orifice (2) in the actual conditions; a central processing unit CPU for checking the pressure attenuation data P(t) against standard pressure attenuation data Y(t) and an alarm circuit (46) that turns on a clogging alarm when the pressure attenuation data P(t) deviates from standard pressure attenuation data Y(t) to a specific degree or beyond that.
Patent TW-523713-B (TW)
Title: Information processing device and method for processing information
Inventor: VAN GESTEL HENRICUS ANTONIUS W
IPC: G11B27/34
Filed: 1999-09-16
Granted: 2003-03-11
Abstract: The invention relates to an information processing device (1), including a user control unit (2) for the selection of units of primary information to be processed and functions to be invoked. The device also includes storage means (3) for storing the primary information. From the selections made by the user the device derives personalizing information concerning the use of the device and the primary information processed with the device. The personalizing information is stored separately and represents a history of the usage of the device, thus making the device more personalized to its owner.
Patent TW-440835-B (TW)
Title: Magnetoresistive memory with raised interference security
Inventor: THEWES ROLAND
IPC: G11C11/16
Filed: 1999-09-27
Granted: 2001-06-16
Abstract: The subject of this application relates to a magnetoresistive memory, wherein, in a small chip surface, through the improvement of the interference security to achieve that: a word line is vertically contained between two complementary bit lines; and a magneteresistive memory system of a regular cell is contained between a bit line and a word line, and an associated magnetoresistive layer system of a complementary memory cell is contained between the word line and the complementary bit line.