baber/WOPTO huggingface dataset:
Patent TW-384570-B (TW)
Title: CMOS circuit
Inventor: HASEGAWA EIICHI
IPC: H03K19/00
Filed: 1998-02-10
Granted: 2000-03-11
Abstract: The present invention discloses a CMOS circuit capable of restraining through currents using a small-scale circuit. The invention is characterized that connecting the drain with the gates of PN channel type MOS transistors 7, 8 as the output terminal and employing the NP channel type MOS transistor 1,2 to control the power supply; connecting the common drains between PN channel type MOS transistors to be the output terminal and connecting the common gates as the input terminals so as to form serial circuits L1, L2 and connecting the output terminals of serial circuits L1, L2; using the input signal as the driving signal of MOS transistors 1, 2 for power supply and driving the said serial circuits L1, L2 by the delayed driving signal from the driving signal. Therefore, the MOS transistors 7,8 for output can be proceeded OFF period that is to execute before other OFF period so that the through current can be restrained.
Patent TW-367586-B (TW)
Title: Manufacturing method for forming bonding pad structure
Inventor: PENG JIUN-KAI
IPC: H01L21/768
Filed: 1998-03-23
Granted: 1999-08-21
Abstract: The invention provides a kind of manufacturing method for forming bonding pad structure which is to form sloping profile of bonding pad contact to prevent organic residuals on the edge of bonding pad after tape polishing. The method includes (a) providing a semiconductor substrate with MOS component and forming metal layer thereon; (b) forming a passivation layer on metal layer; (c) employing isotropic etching, anisotropic etching and defining the passivation layer to form the bonding pad contact with sloping profile and expose the metal layer.
Patent TW-392040-B (TW)
Title: Liquid forced-feed apparatus
Inventor: YUMOTO HIDEAKI
IPC: F04B9/08
Filed: 1998-06-12
Granted: 2000-06-01
Abstract: A liquid forced-feed apparatus has a built-in float in a hermetic vessel provided with a working fluid inlet port, a working fluid discharge port, a forced-feed liquid inlet port, and a forced-feed liquid discharge port. A snap mechanism which is actuated to operate the working fluid inlet port and the working fluid discharge port with the upward and downward strokes of the float, to thereby force a liquid in the hermetic vessel out through the forced-feed liquid discharge port. A power transmitting shaft for transmitting the upward-and-downward movement of the float to the snap mechanism extends out of the hermetic vessel. The snap mechanism is disposed outside of the hermetic vessel.
Patent TW-430944-B (TW)
Title: Integrated circuit arrangement and method for its production
Inventor: SCHWALKE UDO
IPC: H01L21/768
Filed: 1998-06-23
Granted: 2001-04-21
Abstract: A doped region (3) is provided in a substrate (1). A plane having conductive useful structures (71) and a conductive filling structure (72) is arranged on the surface of the substrate (1). The conductive filling structure (72) is conductively connected to the doped region (10, 3). This avoids charging of the conductive filling structure (72), which is provided in order to improve the planarity of the circuit arrangement and has no circuitry function.
Patent TW-430672-B (TW)
Title: A photo-curing resin composition for DVD
Inventor: HOZUMI SHIGEO
IPC: G11B7/253
Filed: 1998-06-24
Granted: 2001-04-21
Abstract: A layer for protection coating and adhesion of DVD is formed by a photo-curing resin composition which comprises a photo-curing component which is cured by polymerization reaction of a unsaturated group, a photo-polymerization initiator and a phenol-based primary antioxidant, wherein this photo-curing component comprises a bi-functional urethane acrylate, an epoxy acrylate containing a bisphenol A skeleton, and a N-vinyl lactam compound, said polymerization initiator comprising a mono or di-benzoylphosphine oxide compound in an amount of 0.1% by weight or more to less than 5.0% by weight based on the total amount of said photo-curing components, and the viscosity of this resin composition at 25 DEG C being in the range from 350 to 700 mPa*S.
Patent TW-372910-B (TW)
Title: Apparatus for forming air bubble in the thermosetting plastic bag
Inventor: SCHEIFELE HORST
IPC: B29C44/28
Filed: 1998-07-07
Granted: 1999-11-01
Abstract: A thermosetting formation apparatus comprising cyclic heating and forming means (11, 15) in which the thermosetting tape (1) is fed one section after another section; a reel-off member is provided immediately before the heating and forming means and a pull-off member installed immediately after the heating and forming means; to ensure the tape (1) moves smoothly in the interval between the real-off means and the pull-off means without excessive tension, a reel-off roller (21) is outfitted on the real-off member which rotates at a fixed angle, and a pull-off roller (22) is mounted on the pull-off member which is driven by belt pulley and linked with the real-off member; the action of both real-off member and the pull-off member are controlled by coupler (32) which consists of photoelectric gates (27, 28, 29) to make an allowance compensation for real-off roller (21).
Patent TW-405124-B (TW)
Title: Top guide grid attachment for a boiling water reactor
Inventor: MATSUMOTO JACK TOSHIO
IPC: G21C5/02
Filed: 1998-10-09
Granted: 2000-09-11
Abstract: A top guide assembly (154) for securing a top guide (152) to a shroud (150) which enables the top guide (152) to be remotely removed without removing any other parts of the shroud (150) or the core support structure is described. In one embodiment, the top guide assembly (154) includes a hanger (158) for being secured in a groove (160) formed in an inner surface (164) of the shroud (150), and the hanger (158) includes a ledge (166) having a plurality of openings (168) therein. The top guide (152) rests on an upper surface of the ledge (166). The assembly (154) also includes wedges (170) for being positioned in pockets (156) formed in the top guide (152) and tightly fit between the hanger (158) and the top guide (152), and threaded studs (174) for extend through respective aligned bores (172) in the wedges (170) and openings (168) in the ledge (166). A nut (176) and a keeper (178) are engaged to one end of each stud (174) to retain the wedge (170) between the hanger (158) and the top guide grid (152).
Patent TW-468259-B (TW)
Title: Manufacturing method of bit lines
Inventor: LIN GUO-CHI
IPC: H01L23/48
Filed: 1998-09-03
Granted: 2001-12-11
Abstract: A manufacturing method of bit lines is disclosed, which comprises: forming a first dielectric layer, a first conductive layer and a second conductive layer on the substrate, then remove part of the second conductive layer and the first conductive layer to expose the first dielectric layer, and form the second conductive wire and the first conductive wire. Then use the cleaning solution to remove part of the second conductive wire, so that the size of the second conductive wire is less than that of the first conductive wire. Then proceed the thermal processing procedure, form an oxide layer around the second conductive wire and the first conductive wire, so that the size of the second conductive wire is about equal to that of the first conductive wire.
Patent TW-408535-B (TW)
Title: Portable radio communication apparatus
Inventor: KUMAGAI KEIICHIRO
IPC: H04M1/23
Filed: 1998-10-01
Granted: 2000-10-11
Abstract: A portable radio communication apparatus having a key protruding mechanism is disclosed. A key operation board has a plurality of keys mounted thereon, and the key operation board is moved such that the keys protrude from the housing when the apparatus is used and retract within the housing when the apparatus is not used.
Patent TW-415138-B (TW)
Title: High output solid laser device excited by semiconductor laser
Inventor: SATO SHINJI
IPC: H01S3/131
Filed: 1998-11-26
Granted: 2000-12-11
Abstract: A semiconductor laser-excited solid laser includes a solid laser medium, a semiconductor laser for exciting the solid laser medium, a polarizer for detecting the wavelength region exciting the solid laser medium of the oscillation spectrum of the semiconductor laser, an operation means such as a comparator for normalizing the area of the spectrum detected by the polarizer and operating the area where the normalized spectrum that is detected superposed on a normalized absorption spectrum related to the excitation of the solid laser medium, and a temperature control means for controlling the temperature of the semiconductor laser based on the output from the operation means.
Patent TW-456074-B (TW)
Title: IC socket
Inventor: MATSUMURA SHIGERU
IPC: H05K1/14
Filed: 1999-02-12
Granted: 2001-09-21
Abstract: The present invention provides an IC socket that can suppress power noise and loss of waveform fidelity occurred due to the parasitic inductance from the probe contact used for power source and the probe contact used for signal, or has no occurrence of non-integrated impedance. A plurality of via-hole conductor layers 21a, 21a, 21a', 21b and 21c are installed on a multi-layer printed circuit board 20 that has at least four conductor layers composed of the alternately stacked layers of the conductor layers 23, 25 used for grounding and the conductor layers used for power source. The probe contacts 3a, 3b, and 3c, which are electrically contacted with the terminal of DUT4, are installed for the remaining via-hole conductors 21a, 21b, and 21c except at least one via-hole conductor 21a'. The conductor layer used for grounding is electrically connected with the via-hole conductors 21a and 21a'. The conductor layer used for power source is electrically connected with the via-hole conductor 21b. The capacitors CA and CB, which use the material of printed circuit board 20 as the dielectric, are individually formed between the conductor layer used for grounding and the conductor layer used for power source.
Patent TW-388778-B (TW)
Title: A fluid recovery device
Inventor: MORI YOJI
IPC: C02F1/40
Filed: 1999-03-05
Granted: 2000-05-01
Abstract: The invention provides a fluid recovery device which can recover not only low-density oil but also highly viscous oil or floating residues. The device can also prevents water from invading driving parts for troubleshooting. The fluid recovery device of the invention consists of: a recovery tube (5), with fluid inlets (4), is supported by a main camel (2) to float on the fluid; a inlet weir (8), which is established around the recovery tube (5), is supported by auxiliary camel (6) to float on the fluid and prompts oil, floating residues, refuse and other floating matters along with fluid to flow into the inlet weir (8) in the recovery tube (5) through the fluid inlets (4); a recovery device (1), which is established beneath the recovery tube (5), is composed of draining tubes (9) for draining fluid out the recovery tube (5); a collecting device (12), which faces the opening part of the inlet weir (8), collects floating matters and makes them to flow into recovery tube (5); a driving part (12) supported by the main camel (2), rotates indirectly following the rotation of the collecting device (12); and a driving part (12) which is housed in a completely sealed box (14).
Patent TW-425774-B (TW)
Title: Multibit sigma-delta converters employing dynamic element matching with reduced baseband tones
Inventor: GUO TAI-HAU
IPC: H03M1/06
Filed: 1999-03-06
Granted: 2001-03-11
Abstract: A method for reducing baseband tones and intermodulation distortions in a multibit sigma-delta converter employing dynamic element matching is disclosed. An N-level sigma-delta analog-to-digital converter includes an analog loop filter, an N-level quantizer, an element selection logic, an internal N-level digital-to-analog converter (DAC), and a decimation filter, where N is an integer greater than two. Adding k extra unit elements to the internal N-level DAC, which totally comprises (N-1+k) unit elements, can shift the sigma-delta modulator tones and intermodulation distortions outside the baseband with no change to the quantization levels of the internal N-level DAC, where k is a positive integer. A cyclical selection of (N-1+k) unit elements in the internal N-level DAC is in accordance with an element selection logic which receives an output of the N-level quantizer and produces a set of control signals for the element selection of the internal N-level DAC. The present invention can also be applied to a multibit sigma-delta digital-to-analog converter.
Patent TW-I227242-B (TW)
Title: Peptide composition for prevention and treatment of HIV infection and immune disorders
Inventor: WANG CHANG YI
IPC: A61K39/395
Filed: 1999-04-16
Granted: 2005-02-01
Abstract: The invention provides peptides comprising a sequence homologous to a portion of the CDR-2 like domain of CD4, covalently linked to a helper T cell epitope, and optionally to other immunostimulatory sequences as well. The invention provides for the use of such peptides as immunogens to elicit the production in mammals of high titer polyclonal auto-antibodies, which are specific to CD4 surface complex. These auto-antibodies prevent binding of HIV viral particles to CD4+ cells. The peptides are useful in pharmaceutical compositions, to provide an immunotherapy for HIV infection and to protect against HIV infection.
Patent TW-494114-B (TW)
Title: Novel composition of copolyesters
Inventor: YUO WU-BIN
IPC: C08G63/52
Filed: 1999-04-23
Granted: 2002-07-11
Abstract: The traditional synthesis of high shrinkage copolyesters made of isophthalic acid, terephthalic acid and ethylene glycol. The traditional high shrinkage copolyesters were unstable, when they were spun, drawn, textured, woven and dyed. However, the novel composition of copolyesters are used 2,2'-bis [4-(2,3-epoxypropoxy) phenyl] propane, and/or 4,4'-bis (4-beta-expoxypropoxy) diphenyl sulfone, and/or isophthalic acid, terephthalic acid and ethylene glycol as raw materials. It can be improved the unstable shrinkage that be caused by process or storage.
Patent TW-416215-B (TW)
Title: High resolution image sensor
Inventor: ZHOU ZHIMIN
IPC: H04N1/40
Filed: 1999-05-01
Granted: 2000-12-21
Abstract: An improved image sensing matrix comprises a semiconductor substrate formation, in which a separated substrate area of a matrix comprises plural rows and plural columns. Area of matrix are divided into plural blocks, in which each block includes a first order matrix area. At least one row of each block is formed with at least a read memory cell and the block containing rows is formed with memory cells of photo sensor in each block. Each block is formed a column block in each column, which comprises plural memory cells of photo sensor and a relevant node line coupling the memory cell of each photo sensor of the column block to a relevant read memory cell. A row address line is coupled to each photo sensing memory cell of a particular memory cell of matrix. A column bit line is coupled to each read memory cell of a particular column of matrix. A block selection line is coupled to each read memory cell of a particular row of the matrix containing read memory cells. Input to the row address line and block selection line respectively in response to the row selection and block selection. As for the acquisition of image data, it is read from each photo sensing memory cell to a corresponding column bit line and input to an output going device through a relevant read memory cell. Output going device probably includes a device used to replace the data status of plug-in data concerning each read memory cell of matrix.
Patent TW-448435-B (TW)
Title: Optical information recording medium, recording and reproducing method therefor and optical information recording and reproducing apparatus
Inventor: NAGATA KENICHI
IPC: G11B7/24062
Filed: 1999-05-14
Granted: 2001-08-01
Abstract: A multi-layer optical information recording medium has a first information layer located at the incident side for a laser beam and another information layer 4 at the back thereof. Thus, it has a large capacity. A relationship that R1a < R1c and R2a > R2c holds for the reflectances R1a and R1c of the information layer 2 in a recorded portion and in a non-recorded portion, and the reflectances R2a and R2c of the information layer 4 in a recorded portion and in a non-recorded portion. A relationship that A1a < A1c holds between the absorptances A1c and A1a of the first information layer in the crystalline state and in the amorphous state. Similarly, a relationship that A2a < A2c holds between absorptances A2c and A2a of the second information layer in the crystalline state and in the amorphous state. Thus, signals can be written to the recording medium at a fast speed and at high sensitivity.
Patent TW-421879-B (TW)
Title: Process for RC array
Inventor: HSIANG HSING-I
IPC: H01L27/01
Filed: 1999-06-01
Granted: 2001-02-11
Abstract: The object of the present invention is to use the integrated ceramic technique to produce RC array devices for increasing the capacitance and production. The embodiment is to use the capacitor substrate to replace the aluminum oxide substrate in the conventional art and composing several sets of capacitor substrates in parallel to increase the capacitance; then, directly stacking the resistor substrates on the capacitor substrates to produce a RC array device.
Patent TW-415014-B (TW)
Title: Manufacture of shallow trench isolation in integrated circuit
Inventor: YANG FU-LIANG
IPC: H01L21/76
Filed: 1999-06-15
Granted: 2000-12-11
Abstract: A method for fabricating a flattened shallow trench isolation is disclosed. A first silicon nitride layer is formed on a semiconductor substrate having a plurality of shallow trenches which at least include a wide shallow trench and a narrow shallow trench. A first silicon oxide layer is formed on the first silicon nitride layer and fills the trenches. A second capping nitride layer and a second silicon oxide layer are sequentially formed, and then the second silicon oxide layer is polished, wherein the second oxide layer and the second capping nitride layer are remained on the wide shallow trench. A dry etching process is performed on the first silicon oxide layer and the second capping nitride layer, and the first silicon oxide layer is over etched until the first silicon nitride layer on the wide shallow trench is exposed. The second capping nitride layer and the first silicon nitride layer are removed, so as to complete the shallow trench isolation in integrated circuit.
Patent TW-444505-B (TW)
Title: Technique for video communications using a coding-matched filter arrangement
Inventor: MATTHEWS KIM NIGEL
IPC: H04N7/50
Filed: 1999-06-22
Granted: 2001-07-01
Abstract: In a system for communicating an image, an image compression scheme is employed to encode the image to reduce the required bandwidth for transmitting same. For example, this compression scheme includes performing, on the image, a discrete cosine transform (DCT), followed by quantization. To reduce the effects of coding artifacts occasioned by the compression scheme, in accordance with the invention, a filter arrangement which is matched to the coding of the image may be utilized to process a received image. The filter arrangement is designed to truncate each non-zero frequency component in the received image whose amplitude is lower than a certain threshold, which is a function of the quantization step size used.
Patent TW-427040-B (TW)
Title: Alkaline cell with improved casing
Inventor: WOODNORTH DOUGLAS J
IPC: H01M50/133
Filed: 1999-07-06
Granted: 2001-03-21
Abstract: The invention relates to electrochemical cells (10) having a metal current collector, particularly zinc/MnO2 primary alkaline cells wherein the cathode metal current collector is the cell's steel casing (20). A coating (50) is provided on the current collector, such as the inside surface of the steel casing (20) of an alkaline cell (10), to improve the cell's performance, particularly when it is used for high power applications. The current collector or inside surface of the steel casing (20) for the cell, is preferably preplated with nickel (22), the plated with a layer (50a) of cobalt or cobalt alloy, and subsequently coated with a layer (50b) of carbon over the cobalt layer (50a). The carbon may be applied from a carbon/solvent coating mixture which is dried to evaporate the solvent carrier.
Patent TW-510029-B (TW)
Title: Semiconductor device and method of isolating metals in encapsulating material used in semiconductor device
Inventor: TAKIGAWA YUKIO
IPC: H01L23/29
Filed: 1999-07-15
Granted: 2002-11-11
Abstract: A semiconductor device having enhanced reliability which is obtained by cutting a wafer encapsulated by an encapsulating material layer in such a manner that each of end faces of bumps for an external terminal is exposed, and a method of isolating a metal in an encapsulating material to allow measuring. The semiconductor device comprises a semiconductor element, bumps formed on a surface thereof for external terminals, and an encapsulating material layer, the encapsulating material layer being formed of an encapsulating material containing greater than 70% by weight and not greater than 90% by weight of fused silica, based on the total weight of the encapsulating material. The metal in the encapsulating material comprising a resin component and a fumed silica filler is isolated for measuring by adding the encapsulating material to a solvent capable of dissolving the resin component, separating solvent-insolubles from the solution in which the resin component has been dissolved, introducing the insolubles into a liquid having a specific gravity of 2.5 to 5.5 to disperse the insolubles, and then recovering the precipitate.
Patent TW-504753-B (TW)
Title: Method for forming a semiconductor device
Inventor: BRAECKELMANN GREGOR
IPC: H01L23/522
Filed: 1999-07-27
Granted: 2002-10-01
Abstract: An interconnect (60) is formed overlying a substrate (10). In one embodiment, an adhesion/barrier layer (81), a copper-alloy seed layer (42), and a copper film (43) are deposited overlying the substrate (10), and the substrate (10) is annealed. In an alternate embodiment, a copper film is deposited over the substrate, and the copper film is annealed. In yet another embodiment, an adhesion/barrier layer (81), a seed layer (82), a conductive film (83), and a copper-alloy capping film (84) are deposited over the substrate (10) to form an interconnect (92). The deposition and annealing steps can be performed on a common processing platform.
Patent TW-415996-B (TW)
Title: Hydraulic lock device
Inventor: KAWAKAMI TAKAYUKI
IPC: B25B5/06
Filed: 1999-11-01
Granted: 2000-12-21
Abstract: A hydraulic intensifier (7) having a spit portion (6) in connection with the outer circumferential hydraulic oil chamber (5) is arranged in a case member (2), the oil input chamber (15) of the hydraulic intensifier (7) is provided with an input port (16) for supplying input hydraulic pressure from the outer part, and oil is disposed for hermetically filling in the outer circumferential hydraulic oil chamber (5) and the spit portion (6). The hydraulic intensifier (7) which is driven by the input hydraulic pressure generates a higher hydraulic pressure than the input hydraulic pressure in the spit portion (6) and the outer circumferential hydraulic oil chamber (5) and causes the thin-walled cylinder portion (40) of a sleeve body (4) to elasticaly deform toward the radially reduced side so that the rod can be locked. Thereby, it is possible to obtain a hydraulic lock device with compact volume and high output, and to obtain a hydraulic pressure supply source with compact volume and low pressure.