baber/WOPTO huggingface dataset:
Patent TW-202221632-A (TW)
Title: Method and apparatus for storing material, robot, warehousing system and storage medium
Inventor: LI HUI-XIANG
IPC: G06F17/18
Filed: 2021-11-19
Abstract: Embodiments of the present application provide a method and apparatus for storing a material, a robot, a warehousing system and a storage medium. The method for storing a material includes: moving, according to a storage instruction of a material to be stored, to a target location; detecting storage space corresponding to the storage instruction, where the storage space of the material to be stored is determined according to size information of the material to be stored and dynamic storage space of the material on a shelf corresponding to the material to be stored; determining, according to detection result, whether the storage space corresponding to the storage instruction includes continuous vacant space with a preset size; and storing, when it is determined that the storage space corresponding to the storage instruction includes the continuous vacant space with the preset size, the material to be stored in the vacant space with the preset size of the storage space.
Patent TW-202213541-A (TW)
Title: Method for manufacturing semiconductor device
Inventor: OIKAWA YOSHIAKI
IPC: H01L21/28
Filed: 2010-06-30
Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.
Patent TW-202211469-A (TW)
Inventor: ARMSTRONG MARK
IPC: H01L29/78
Filed: 2018-07-13
Abstract: A method comprising: forming a substrate; forming a first nanowire over the substrate; forming a second nanowire over the substrate; forming a gate over a portion of the first and second nanowires; implanting a dopant such that a region between the first and second nanowires under the gate does not receive the dopant while a region between the first and second nanowires away from the gate receives the dopant, wherein the dopant amorphize a material of the region between the first and second nanowires away from the gate; and isotopically etching of the region between the first and second nanowires away from the gate.
Patent TW-202324956-A (TW)
Title: System and method for debugging wi-fi service flow problems
Inventor: ZHU XI-YANG
IPC: H04J14/00
Filed: 2021-12-10
Abstract: The present invention provides a debugging system, which is embedded on a forwarding path of a Wi-Fi module and includes a service flow matching module and a service flow debugging execution module. The service flow matching module receives and analyzes the message, and determines a service flow type and a debugging mean involved in the message according to a dynamic service flow type association table, wherein the dynamic service flow type association table includes a corresponding service flow type and a corresponding debugging mean involved in the message. The service flow debugging execution module executes the corresponding debugging means for the message according to a determination result from the service flow matching module.
Patent TW-202326665-A (TW)
Title: Scan-type display apparatus capable of short circuit detection, and scan driver thereof
Inventor: XIE JI-MIN
IPC: G09G3/32
Filed: 2021-12-17
Abstract: A scan-type display apparatus includes an LED array and a scan driver. The LED array has a common anode configuration, and includes multiple scan lines, multiple data lines and multiple LEDs. The scan driver includes multiple scan driving circuits. Each scan driving circuit includes a voltage generator and a detector. The voltage generator has an output terminal that is connected to the scan line corresponding to the scan driving circuit, and is configured to output one of an input voltage and a clamp voltage at the output terminal of the voltage generator. The detector is connected to the output terminal of the voltage generator, and generates a detection signal that indicates whether any one of the LEDs connected to the scan line corresponding to the scan driving circuit is short circuited based on a voltage at the output terminal of the voltage generator and a detection timing signal.
Patent TW-202238438-A (TW)
Inventor: GUO MING-CHI
IPC: G09F9/30
Filed: 2022-03-16
Abstract: 一種識別主體指紋的方法，其特徵在於，包含以下步驟：提供一顯示裝置，包含：多個指紋識別單元、具有一第一顏色的多個第一子像素區、具有一第二顏色的多個第二子像素區、以及具有一第三顏色的多個第三子像素區，其中，該第一顏色、該第二顏色和該第三顏色不同；當該顯示裝置處於一指紋識別模式時，通過將該主體的一手指放置於該顯示裝置上來定義一識別區域；以及當該顯示裝置處於該指紋識別模式時，致能設置於該識別區域中的該些第一子像素區中的至少一個，且失能設置於該識別區域中的該些第二子像素區和該些第三子像素區中的至少一個。
Patent TW-202303952-A (TW)
Inventor: ZANG HUI
IPC: H01L27/148
Filed: 2022-03-22
Abstract: 一種不均勻溝槽像素單元包括半導體基板，該半導體基板包括浮動擴散區域、光電二極體區域，以及在前表面和後表面之間的：第一側壁表面、淺底表面、第二側壁表面和深底表面。第一側壁表面和淺底表面限定出位於浮動擴散區域和光電二極體區域之間的淺溝槽，該淺溝槽從前表面延伸至半導體基板中。淺溝槽的淺深度超過浮動擴散區域的接面深度。第二側壁表面和深底表面限定出位於浮動擴散區域和光電二極體區域之間的深溝槽，該深溝槽從前表面延伸至半導體基板中。深底表面和前表面之間的距離限定出深溝槽的深深度，該深深度超過淺深度。
Patent TW-202241060-A (TW)
Title: Level shifter
Inventor: HSU HSIN-CHENG
IPC: H03K5/003
Filed: 2022-03-25
Abstract: A level shifter with high reliability is provided, which has a cross-coupled pair and a pull-down pair. The cross-coupled pair couples a first power terminal to a first output terminal of the level shifter and a second output terminal of the level shifter. The pull-down pair has a first transistor and a second transistor, which are controlled according to an input signal of the level shifter. The first transistor is coupled between the second output terminal and a second power terminal, and the second transistor is coupled between the first output terminal and the second power terminal. A first voltage level coupled to the first power terminal is greater than a second voltage level coupled to the second power terminal, and the second voltage level is greater than the ground level.
Patent TW-202230869-A (TW)
Title: New or improved microporous membranes, battery separators, coated separators, batteries, and related methods
Inventor: SUMMEY BARRY J
IPC: B29C55/12
Filed: 2018-05-24
Abstract: This application is directed to new and/or improved MD and/or TD stretched and optionally calendered membranes, separators, base films, microporous membranes, battery separators including said separator, base film or membrane, batteries including said separator, and/or methods for making and/or using such membranes, separators, base films, microporous membranes, battery separators and/or batteries. For example, new and/or improved methods for making microporous membranes, and battery separators including the same, that have a better balance of desirable properties than prior microporous membranes and battery separators. The methods disclosed herein comprise the following steps: (1.) obtaining a non-porous membrane precursor; (2.) forming a porous biaxially-stretched membrane precursor from the non-porous membrane precursor; (3.) performing at least one of (a) calendering, (b) an additional machine direction (MD) stretching, (c) an additional transverse direction (TD) stretching, and (d) a pore-filling on the porous biaxially stretched precursor to form the final microporous membrane. The microporous membranes or battery separators described herein may have the following desirable balance of properties, prior to application of any coating: a TD tensile strength greater than 200 or 250 kg/cm2, a puncture strength greater than 200, 250, 300, or 400 gf, and a JIS Gurley greater than 20 or 50 s.
Patent TW-202300624-A (TW)
Title: Curable resin composition for use in sealing material for film liquid crystal panel, and film liquid crystal panel having end sealed by said curable resin composition
Inventor: KOMATSUZAKI SATORU
IPC: G02F1/1339
Filed: 2022-03-28
Abstract: The present invention addresses the problem of providing a curable resin composition for use in a sealing material for a film liquid crystal panel, the resin composition being stable in a state of being uncured, not experiencing crystal misalignment even under a harsh environment of heat and humidity or under conditions of acidity, and having excellent conformance to a substrate. In order to solve the problem described above, there is provided a curable resin composition for use in a sealing material for film liquid crystal panel, the composition containing: (A) a polyfunctional thiol compound; (B) a polyfunctional (meth)acrylic compound which has 3-6 (meth)acrylic groups and has a (meth)acrylic equivalent of 100-250; (C) a polyfunctional acrylic compound which has 2-4 (meth)acrylic groups; and (D) a photopolymerization initiator. The blending mass ratio of (B)/(C) is 0.1-1.0, and the ratio between thiol groups of (A) and polymerizable unsaturated bonds of (B) and (C) (thiol groups/polymerizable unsaturated bonds) is 0.5-3.0.
Patent TW-202248238-A (TW)
Title: Oil resistance compound including hydrogen-bonding point
Inventor: SHIOTANI YUKO
IPC: C08F220/36
Filed: 2022-03-31
Abstract: This invention provides a compound or oil resistant agent capable of imparting excellent oil resistance and optional water resistance to paper. The compounds or oil resistant agents comply at least one of the follows: in X-ray diffractometry (XRD) measurements, (i) (ii) the intensity of the peak at 2[theta] of 5 DEG or less is 0.7 times or more of the intensity of the peak at 15 to 25 DEG at a measurement temperature of 25 DEG C or 80 DEG C, (iii) the full width half maximum of the peak at 2[theta] of 15 to 25 DEG is 2.0 DEG or more at a measurement temperature of 25 DEG C, (iv) the peak top value at 2[theta] of 5 DEG or less is not changed at the measured temperature of 25 DEG C to 70 DEG C, (v) the intensity of the peak at 2[theta] of 5 DEG or less is maintained at the measurement temperature of 25 DEG C to 80 DEG C, and in the differential scanning calometography (DSC) measurement, (vi) full width half maximum of melting peak from 0 DEG C to 120 DEG C is 4.5 DEG C or higher.
Patent TW-202304192-A (TW)
Inventor: JUN JAE-HOON
IPC: H01L27/146
Filed: 2022-04-07
Abstract: 一種影像感測器包括：畫素陣列，包括連接至行線的第一畫素及第二畫素；列驅動器，用於基於箝位電壓而向第一畫素提供第一選擇訊號，且用於基於選擇電壓而向第二畫素提供第二選擇訊號，其中第一畫素因應於第一選擇訊號而輸出第一輸出電壓，且第二畫素因應於第二選擇訊號而輸出第二輸出電壓，其中第一輸出電壓及第二輸出電壓作為畫素訊號經由行線而輸出，其中畫素訊號的電壓對應於藉由利用第一輸出電壓對第二輸出電壓進行箝位而獲得的電壓，且其中第一輸出電壓的電壓位準的由於溫度而引起的變化是藉由箝位電壓來補償。
Patent TW-202311640-A (TW)
Inventor: NIERMANN STEFAN
IPC: F16C33/20
Filed: 2022-04-12
Abstract: 本發明係關於滑動軸承(1)，該滑動軸承包含以空心圓柱之方式的軸承主體(2)，該空心圓柱由基底材料生產，且該主體以其內側包圍襯套(20)，其中不同於該基底材料的減摩材料經提供在該軸承主體(2)內側處的該襯套(20)中，該減摩材料包圍位於該襯套(20)內的滑動導件(4)。該滑動軸承(1)包含由該減摩材料製成的至少一個類似空心圓柱的滑動元件(3)，該元件佈置在該軸承主體(2)之該襯套(20)中且以沿圓周閉合方式包圍該滑動導件(4)，其中該滑動元件(3)在其外側處包含至少一個突出部(310)，該滑動元件藉由該至少一個突出部接合在提供於該軸承主體(2)之內側處的凹部(21)中，且其中該滑動元件(3)藉由徑向壓入配合擠壓至該軸承主體(2)之該襯套(20)中。
Patent TW-202329464-A (TW)
Inventor: LIAO CHE-HSIEN
IPC: H01L29/78
Filed: 2022-04-12
Abstract: 本揭露提供一種導電層堆疊及半導體元件。該導電層堆疊具有一中介層，包括矽化鎢並設置在一下層上；一填充層，包括鎢並設置在該中介層上。該下層包括氮化鈦並包括一柱狀顆粒結構。該中介層的一厚度大於大約4.1nm。
Patent TW-202302433-A (TW)
Title: Roller for transporting a flexible substrate, vacuum processing apparatus, and methods therefor
Inventor: DEPPISCH THOMAS
IPC: B65G39/00
Filed: 2022-04-26
Abstract: A roller (100) for transporting a flexible substrate (10) is described. The roller (100) includes a main body (101) having a plurality of gas supply slits (103) provided in an outer surface (102) of the main body (101). The plurality of gas supply slits (103) extends in a direction of a central rotation axis (111) of the roller (100). Further, the roller (100) includes a sleeve (104) provided circumferentially around and in contact with the main body (101). The sleeve (104) has a plurality of gas outlets (105) being provided above the plurality of gas supply slits (103). Further, the sleeve (104) includes a metal layer (106) embedded within isolating material.
Patent TW-202305691-A (TW)
Title: Service providing system, service providing method and program product which can improve the convenience of a service using a card
Inventor: TOMODA Kyosuke
IPC: G06Q20/40
Filed: 2022-06-07
Abstract: The purpose of this disclosure is to improve the convenience of a service using a card to a user. The service providing system (S) of this disclosure provides a service using a user's card. certification authority (301) executes authentication related to the user's first card. A setting mechanism (302) performs the setting related to the second card of the user who establishes association with the first card, that is, the second setting, when the authentication has been executed. A providing mechanism (304) provides a service using the second card based on the second setting. The setting mechanism performs a first setting that is a setting related to the first card when the authentication is executed, and the providing mechanism performs the service using the first card based on the first setting. The service providing system further includes a comparison mechanism for comparing first name information related to the name of the first card and second name information related to the name of the second card. The setting mechanism performs a second setting based on the comparison result between the first name information and the second name information when the authentication is executed. The present invention also provides a service providing method for providing a service using a user's card. The service providing method comprises an authentication step of performing authentication related to a first card of the user; a setting step of performing a second setting which is a setting related to the second card of the user who establishes association with the first card when the authentication is executed; and a providing step of providing the service using the second card based on the second setting.
Patent TW-202335258-A (TW)
Title: Semiconductor storage device and manufacturing method thereof
Inventor: TAKEKIDA HIDETO
IPC: H01L27/11517
Filed: 2022-06-17
Abstract: A semiconductor storage device includes: a first semiconductor layer through first conductive layers; a gate insulating film between the first conductive layers and the first semiconductor layer; a first structure facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layer and the first structure; a third semiconductor layer between the second semiconductor layer and the first conductive layers; a fourth semiconductor layer including a first portion along a bottom surface of the third semiconductor layer and a second portion along a top surface of the second semiconductor layer; and a first insulating layer, between the first and second portions, including a first region spaced from the first structure with a distance longer than a first distance that contains a nitride film, and a second region spaced from the first structure with a distance shorter than the first distance that does not contain nitrogen.
Patent TW-202313468-A (TW)
Title: Silicon precursor materials, silicon-containing films, and related methods
Inventor: KIM YOON-HAE
IPC: C01B33/10
Filed: 2022-07-26
Abstract: Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.
Patent TW-202318568-A (TW)
Title: Method for manufacturing metal wiring, method for manufacturing transistor, and metal wiring
Inventor: KOIZUMI SHOHEI
IPC: H01L21/768
Filed: 2022-07-26
Abstract: The present invention provides a method for manufacturing a metal wiring on a substrate, the method comprising a step for forming a first layer including a first material on at least part of the substrate, a step for forming a crack in the first layer so as to form a first layer having a crack, and a step for forming a second layer including a second material on the first layer having the crack.
Patent TW-202312479-A (TW)
Inventor: WICKBOLDT PAUL
IPC: H01L31/0232
Filed: 2022-09-02
Abstract: 一種使用偏振進行偽造檢測的光學指紋感測器，包括：多個透鏡；影像感測器，其包括像素陣列，該像素陣列包括多個第一光電二極體；每個第一光電二極體之一光敏表面之一中心與每個透鏡之一光學中心之間的一線形成多個光軸中的光軸；至少一個有孔擋板層，其位於影像感測器與多個透鏡之間，並且每個有孔擋板層具有各自的多個孔徑光闌，每一個孔徑光闌與光軸成中心對準；多個第二光電二極體，該多個第二光電二極體與多個第一光電二極體間插配置，其中每個第二光電二極體被配置為檢測穿過透鏡和未沿著光軸對準的至少一個孔徑光闌的光；以及，至少一個偏振元件，其被定位成使照射多個第二光電二極體的電磁能量偏振。
Patent TW-202304699-A (TW)
Inventor: KOBAYASHI TOMOAKI
IPC: B32B7/023
Filed: 2021-05-21
Abstract: Provided is an anti-reflection film having high infrared transmittance and exceptional flexibility. The present invention has a substrate (10), a hard coat layer (20), an adhesion layer (30), and an anti-reflection layer (40) in the stated order, the anti-reflection layer being formed from a first high-refractive-index layer (411) having an optical thickness of 41-52 nm from the adhesion-layer (30) side, a first low-refractive-index layer (412) having an optical thickness of 41-53 nm, a second high-refractive-index layer (413) having an optical thickness of 302-313 nm, and a second low-refractive-index layer (414) having an optical thickness of 135-196 nm.
Patent TW-202330575-A (TW)
Inventor: SALLBERG MATTI
IPC: C07K14/165
Filed: 2022-09-28
Abstract: Disclosed herein are immunogenic compositions or product combinations of engineered SARS-CoV nucleic acids, genes, peptides, or proteins that can be used to elicit an immune response against a SARS-CoV infection or infection by another coronavirus, including SARS-CoV-2 and variants thereof. Also disclosed are methods of using the immunogenic compositions or product combinations in subjects to generate immune responses and neutralizing antibodies against SARS-CoV or another coronavirus by administering the compositions or combinations with a nucleic acid prime and polypeptide boost approach.
Patent TW-202323550-A (TW)
Title: Austenitic stainless steel sheet, method for producing same, and sheet spring
Inventor: HIRAKAWA NAOKI
IPC: C22C38/40
Filed: 2022-10-24
Abstract: This austenitic stainless steel sheet contains, by mass, C: 0.04-0.11%, Si: 2.0-3.5%, Mn: 1.50% or less, Ni: 6.0-10.0%, Cr: 12.0-15.0%, Mo: 1.3-3.2%, Cu: 1.00% or less, N: 0.03-0.15%, and O: 0.0050% or less, the remainder being Fe and impurities. The value of Md30 represented by formula (1) is -30 to 0 DEG C, formula (1): Md30 = 551-462(C+N)-9.2Si-8.1Mn-29(Ni+Cu)-13.7Cr-18.5Mo (in the formula, the element symbols represent the content (mass%) of respective elements). The austenitic stainless steel sheet has a metal structure in which the content of the strain-induced martensite phase is 30 vol% or more and has a thickness of 0.15 mm or less.
Patent TW-202325055-A (TW)
Inventor: GUO MING-WANG
IPC: H04W12/122
Filed: 2022-11-22
Abstract: An attack prevention method includes: receiving an authentication request frame; and in response to receiving the authentication request frame, replying with an authentication response frame that is sent to a non-AP STA, wherein the authentication request frame includes a timeout interval element that carries Authentication Comeback time. Another attack prevention method includes: ignoring each specific request frame that is received within a period in which a connected non-AP STA operates under a power saving mode, wherein each specific request frame includes one of an authentication request frame, an association request frame, and a reassociation request frame.
Patent TW-202335269-A (TW)
Inventor: WANG TZU-JUI
IPC: H01L27/146
Filed: 2022-12-05
Abstract: Various embodiments of the present disclosure are directed towards an image sensor and a method for forming thereof. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. A pixel region of the substrate is disposed within an inner perimeter of the DTI structure. A photodetector is disposed in the pixel region of the substrate. A gate electrode structure overlies, at least partially, the pixel region of the substrate. A first gate dielectric structure partially overlies the pixel region of the substrate. A second gate dielectric structure partially overlies the pixel region of the substrate. The gate electrode structure overlies both a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness that is greater than the first thickness.
Patent TW-202335711-A (TW)
Title: Interaction control method and device, electronic equipment and storage medium
Inventor: LEI DA
IPC: A63F13/52
Filed: 2023-02-08
Abstract: The invention provides an interaction control method and device, electronic equipment and a storage medium. The game scene comprises a first virtual object, a second virtual object and a third virtual object; the first virtual object is associated with a first target value and a second target value; the second virtual object and the third virtual object are associated with a third target value; the first target value responds to the second virtual object attack and does not respond to the third virtual object attack; the second target value does not respond to the second virtual object attack and responds to the third virtual object attack; the third target value responds to the attack of the second virtual object and does not respond to the attack of the third virtual object. The method comprises the following steps: in response to damage of a third virtual object to a first virtual object, triggering to display a second target value; updating the second target value based on the first damage value caused by the third virtual object to the first virtual object; and controlling the first virtual object to enter a first target state in response to the second target value meeting a first preset condition.
Patent TW-202332955-A (TW)
Title: Optical imaging system
Inventor: BYUN JOON-HEE
IPC: G02B17/02
Filed: 2022-03-04
Abstract: An optical imaging system includes a lens group including at least one lens forming a first optical axis; and an optical path converter reflecting light emitted from the lens group to form an image on an imaging plane. In the optical imaging system, a maximum distance from an object side surface of a frontmost lens, disposed closest to an object side, among the lens group, to the imaging plane, in a first optical axis direction is 11.0 mm or less.
Patent UA-38257-A (UA)
Title: Method for predicting and treating recurrences of complicated ulcer
Filed: 2000-06-12
Abstract: The method for predicting the recurrence of the complicated ulcer comprises the surgery, the intraoperative tissue sampling from the gastric mucosa, and the study of the sample. When Helicobacter pylori /HP/ infection is evident and the acidity of the gastric juice is elevated, antihelicobacter and antisecretory therapy is performed until HP eradication and normalization of the acidity values. The method provides for the repeated assay for HP infection and the acidity of the gastric juice. The presence of HP and the elevated acidity of the gastric juice are the factors predicting the recurrence of the complicated ulcer. The invention relates to the surgery and gastroenterology and may be used for predicting, treating, and preventing the recurrence of the complicated ulcer.