Patent EA-000388-B1 (EA)
Title: Method of fabrication of thermoelectric modules and solder for such fabrication
Inventor: YAHATZ MICHAEL
IPC: H01L35/32
Filed: 1996-09-30
Abstract: 1. A thermoelectric module comprising: - an array of n-type and p-type thermoelectric elements formed of semi-conductive material; - a thin coat of a conductive material deposited on each end of the elements, said material comprising about 50 to 100 weight percent bismuth, the remainder being, essentially antimony; - a buss bar having a phosphorous-nickel surface wherein the phosphorous content of the surface is at least 3.5%. - a solder comprising 50 to 99 weight percent bismuth and 50 to 1 weight percent antimony joining said coated thermoelectric elements to said phosphorous-nickel on said buss bar. 2. The module of Claim 1, wherein the solder comprises about 75 to 96 weight percent bismuth and about 25 to 4 weight percent antimony. 3. The module of Claim 2, wherein the solder comprises about 80 to 95 weight percent bismuth and about 20 to 5 weight percent antimony. 4. The module of Claim 1, wherein the phosphorous content is about 3.5 to 18%. 5. The module of Claim 4, wherein the phosphorous content is about 7 to 13 weight percent. 6. The module of Claim 5, wherein the phosphorus content is about 8 to 12 weight percent. 7. The module of Claim 1, wherein the buss bar is formed of copper. 8. The module of Claim 1, wherein the phosphorous nickel surface on the buss bar is a layer of phosphorus-nickel formed on the buss bar. 9. A method of manufacturing thermoelectric modules capable of withstanding high temperature use comprising: - depositing on each end of a thermoelectric element a conductive material, said material comprising about 50 to 100 weight percent bismuth, the remainder being, essentially, antimony; - forming a surface of phosphorous-nickel onto a buss bar; - joining said conductive material to said phosphorous-nickel surface with a solder comprised of about 50 to 99 weight percent bismuth and about 50 to 1 weight percent antimony wherein the combined weight percent of the bismuth and antimony is about 100 percent. 10. The method of Claim 9 wherein the solder comprises about 75 to 96 weight percent bismuth and about 25 to 4-weight percent antimony. 11. The method of Claim 10 wherein the solder comprises about 80 to 95 weight percent bismuth and about 20 to 5 weight percent antimony. 12. The method of Claim 9 wherein the phosphorous-nickel layer comprises at least 3.5 weight percent phosphorous. 13. The method of Claim 12 wherein the phosphorous content is about 3.5 to 18%. 14. The method of Claim 13 wherein the phosphorous content is about 7 to 13 weight percent. 15. The method of Claim 14 wherein the phosphorous content is about 8 to 12 weight percent. 16. The method of Claim 9 wherein the buss bar is formed of copper. 17. The method of Claim 9 wherein the phosphorous nickel surface is a layer formed on said buss bar. 18. A method for generating electricity comprising subjecting the thermoelectric device of Claim 1 to a temperature gradient and connecting the respective conductive elements to complete an electrical circuit. 19. A method for generating electricity from a thermal gradient, comprising: - orienting the device of Claim 1 so that the direction of the thermal gradient is parallel to the desired direction of current flow through the thermoelectric elements; - maintaining said thermal gradient; - completing an electric circuit whereby an electrical current is generated. 20. A method of generating a thermal gradient comprising subjecting the thermoelectric device of Claim 1 to the flow of an electric current, thereby creating a temperature gradient due to the Peltier effect along the direction of current flow in the thermoelectric element. 21. A method of effecting refrigeration comprising thermally connecting the cold junction of the thermoelectric device of Claim 1 to an object to be refrigerated, thermally connecting the hot junction to a heat sink, and applying a direct current through the semiconductor elements of the device in a direction parallel to the temperature gradient in a direction so as to maintain the desired thermal gradient. 22. A method of effecting thermoelectric heating comprising connecting the hot junction of the thermoelectric device of Claim 1 to an object to be heated, connecting the cold junction to a heat sink and applying a direct current through the semiconductor elements of the device in a direction parallel to the temperature gradient in a direction so as to maintain the desired thermal gradient.