baber/WOPTO huggingface dataset:
Patent TW-340142-B (TW)
Title: Method of producing a polyester products
Inventor: TAGUCHI SETSUO
IPC: D01F6/62
Filed: 1996-01-25
Granted: 1998-09-11
Abstract: A sort of method of producing a polyester products, by melting polyesters at the induction rate of 2500m/min-3500m/min for products containing polyethylene to phenyl ester in loose or unextended state and over 140oC and under the melting temperature of polyester for wet heating and/or dry heating treatment.
Patent TW-285757-B (TW)
Title: The manufacturing method of low-leaking current electrode for LPCVD TiO film
Inventor: SUEN SHII-JONQ
IPC: H01L21/3105
Filed: 1996-04-10
Granted: 1996-09-11
Abstract: A manufacturing method of low-leaking current electrode for LPCVD TiO film, includes the following steps: Prepare a semiconductor Si base; Deposit TiO thin film on Si base; Proceed annealing procedure on TiO film; Deposit top electrode layer on TiO film; Proceed 2nd annealing procedure.
Patent TW-442300-B (TW)
Title: Pharmaceutical dosage form comprising darifenacin
Inventor: DOLAN THOMAS FRANCIS
IPC: C07D405/06
Filed: 1996-08-06
Granted: 2001-06-23
Abstract: There is provided a pharmaceutical dosage form adapted for administration to the gastrointestinal tract of a patient, comprising darifenacin, or a pharmaceutically acceptable salt thereof, and a pharmaceutically acceptable adjuvant, diluent or carrier; characterized in that the dosage form is adapted to deliver at least 10% by weight of the darifenacin, or the pharmaceutically acceptable salt thereof, to the lower gastrointestinal tract of the patient. The formulation minimizes unwanted side-effects and increases the bioavailability of darifenacin.
Patent TW-486467-B (TW)
Title: Crystalline[r-(R*,R*)]-2-(4-fluorophenyl)-β,δ-dihydroxy-5-(l-methylethyl)-3-phenyl-4- [(phenylamino)carbonyl]-1H-pyrrole-1-heptanoic acid calcium salt (2:1)
Inventor: BRIGGS CHRISTOPHER A
IPC: C07D/
Filed: 1996-08-14
Granted: 2002-05-11
Abstract: Novel crystalline forms of (R-(R*,R*)]-2-(4-fluorophenyl)-β,δ-dihydroxy-5-(l-methylethyl)-3-phenyl-4-[(phenylamino)carbonyl]-1H-pyrrole-l-heptanoic acid hemi calcium salt designated form I, form II, and form IV are characterized by their X-ray powder diffraction and/or solid state NMR are described, as well as methods for the preparation and pharmaceutical composition of the same, which are useful as agents for treating hyperlipidemia and hypercholesterolemia.
Patent TW-355708-B (TW)
Title: Preparation of substituted thiazoles
Inventor: JACKSON ARTHUR
IPC: C07D277/02
Filed: 1996-09-14
Granted: 1999-04-11
Abstract: A process for preparing substituted thiazole comprising reacting isothiocyante compound of the general formula (I) with chlorinated or brominated agent, wherein Hal is a chlorine or bromine atom, R1 and R2 is each a hydrogen atom or an alkyl group containing 1 to 3 carbon atoms.
Patent TW-430678-B (TW)
Title: Prepreg and a process for producing the same
Inventor: TAKAHASHI TSUTOMU
IPC: C09D5/25
Filed: 1996-10-14
Granted: 2001-04-21
Abstract: The present invention provides a lightweight prepreg having uniform formation, low linear thermal expansion coefficient and good mechanical strength, comprising a porous para-oriented aromatic polyamide film and a thermoplastic resin and/or a thermosetting resin, the porous para-oriented aromatic polyamide film being impregnated with the thermoplastic resin and/or the thermosetting resin, a process for producing the same, and a printed circuit substrate/board using the same. A process for producing for producing a prepreg comprising a porous para-oriented aromatic polyamide film and a thermoplastic resin and/or a thermosetting resin, the porous para-oriented aromatic polyamide film being impregnated with the thermoplastic resin and/or thermosetting resin, which comprises the following steps (a) to (d): step (a) of forming a film-like material from a solution containing 1 to 10% by weight of a para-oriented aromatic polyamide having an inherent viscosity of 1.0 to 2.8 dl/g and 1 to 10% by weight of a chloride of an alkaline metal or an alkaline earth metal in a polar amide solvent or a polar urea solvent ; step (b) of maintaining the film-like material at a temperature of not less than 20 DEG C or not more than -5 DEG C to deposit the para-oriented aromatic polyamide from the film-like material; step (c) of immersing the film-like material obtained in the step (b) in an agueous solution or an alcoholic solution to elute the solvent and the chloride of the alkaline metal or alkaline earth metal, followed by drying to obtain a para-aramid porous film; and step (d) of impregnating the porous film obtained in the step (c) as a substrate with the thermoplastic resin and/or thermosetting resin to produce a prepreg.
Patent TW-326557-B (TW)
Title: Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area.
Inventor: JEON HEE-SEOG
IPC: H01L21/331
Filed: 1996-10-29
Granted: 1998-02-11
Abstract: A method of fabricating a bipolar transistor includes the following steps a. forming sequentially a second conductive type buried layer and an epitaxial layer on a first conductive type semiconductor substrate b. forming sequentially a first conductive type first polysilicon layer and a first oxide film on the epitaxial layer c. patterning the first oxide film and the first polysilicon layer by a photolithographic process to form a window d. forming sequentially a second oxide film, a first material layer and a second material layer on the resultant window e. depositing a third material layer on the second material layer and performing an anisotropic etching process with respect to the third material layer to form a first sidewall spacer f. oxiding the exposed second material layer using the first sidewall spacer as a mask g. removing the first sidewall spacer and selectively and sequentially etching the non-oxidized portion of the second material layer and the first material layer by using the oxidized portion of the second material layer as a mask
Patent TW-565567-B (TW)
Title: Antigenic protein originating in Malassezia
Inventor: TAKESAKO KAZUTOH
IPC: C07K14/37
Filed: 1996-12-12
Granted: 2003-12-11
Abstract: A substantially pure, isolated antigenic protein originating in fungi of the genus Malassezia, characterized by having an avidity with IgE antibodies originating in allergic patients; antigenic fragments originating in said protein; a specific antibody against said antigenic protein or fragments; a diagnostic, therapeutic or prophylactic agent for malassezian allergic diseases containing the antigenic protein or fragments as the active ingredient; a novel recombinant malassezian antigenic protein; a gene coding for the protein; and epitopes of the protein.
Patent TW-421986-B (TW)
Title: Heat sink assembly and method of applying thermal grease to a heat sink
Inventor: HINSHAW HOWARD G
IPC: H01L23/36
Filed: 1996-12-31
Granted: 2001-02-11
Abstract: Heat sinks pre-coated with a layer of a material such as thermal grease are disclosed. Contamination and migration of the thermal grease is substantially reduced by covering the coated areas with a protective film that is removed prior to the assembly of the heat sink into a circuit board or other assembly. By providing a pre-coated heat sink, productivity can be enhanced, by increasing accuracy with which the thermal grease is applied, thus eliminating waste and clean up. Methods for pre-coating either a heat sink or the protective film with thermal grease are also disclosed. In preferred embodiments areas of the heat sink can be either fully coated, or portions electively coated, and the coating is most preferably accomplished by a silk screening or pad printing process. The protective film is preferably provided with a tear off tab to facilitate the removal of the protective film. The present invention also discloses improved methods of installing a heat sink using heat sinks that are pre-coated with thermal grease.
Patent TW-450939-B (TW)
Title: Brake shoe for elevator emergency stop device, emergency stop device for elevator, and elevator having emergency stop function
Inventor: KATO MASAHIRO
IPC: B66B1/32
Filed: 1997-02-20
Granted: 2001-08-21
Abstract: The invented brake shoe for elevator emergency stop device has a heat resistance for temperature above 1000 DEG C, a stable high friction coefficient under high speed and high stress conditions, and a good welding resistance relative to the rail. A brake shoe for an elevator emergency stop has a brake body having a braking face and plurality of braking pieces embodied in the braking face side of the brake body to be projected from a braking face. The projection of each of the braking pieces forms a column or a multi-cornered pole having rounded corners. The braking pieces are made of a composite material containing a ceramic base material selected from the group consisting of silicon nitride, silicon carbide and sialon (formed with Si-Al-O-N group elements), and particles of at least one ceramic material selected from the group consisting of a carbide, a nitride and a boride. The ceramic particles have a particle size in the range of 10 to 150 mu m, and dispersed into the ceramic base material.
Patent TW-388946-B (TW)
Title: Device for sensing a flat zone of a wafer for usein a wafer probe tester
Inventor: AN SANG-BAE
IPC: H01L21/68
Filed: 1997-03-18
Granted: 2000-05-01
Abstract: A sensing device, for installation in a wafer probe tester for sorting wafers according to the qulity thereof, includes a main body for mounting on the wafer probe tester, an upper member and a lower member exteding from the main body to define an open area therbetween for insertion of any one of different sized wafers, a plurality of light emitting devices spaced apart at fixed intervals and installed on the upper member, a plurality of light receiving devices spaced apart at respective locations opposed to the light emitting devices across the open area and installed on the lower member, and a control circuit, connected to the light emitting devices and the light receiving devices, for detecting a flat zone of any one of the different sized wafers inserted into the pen area. The different sized wafers include 4 inch, 5 inch and 6 inch wafers.
Patent TW-359860-B (TW)
Title: Method for producing metal oxide semiconductor element with light doped drain (LDD) region
Inventor: LIN HAN
IPC: H01L29/78
Filed: 1997-03-24
Granted: 1999-06-01
Abstract: The invention relates to a method for producing a metal oxide semiconductor element with a light doped drain (LDD) region, which is characterized in using an ion different from the source/drain and performing implantation at an inclined angle and together with the rotation of a chip, in order to form a light doped drain region on both sides of the source/drain, while forming the source/drain and the light doped drain region by using a same mask. The method for producing a metal oxide semiconductor element with a light doped drain (LDD) region of the present invention reduces one spacer production process than the conventional production process. Furthermore, the reduction in the production of the spacer can increase the contact area of the subsequent contact via thereby reducing the contact resistance.
Patent TW-358277-B (TW)
Title: Multiplex transmission method and system, and audio jitter absorbing method used therein
Inventor: KUROBE AKIO
IPC: H04N19/89
Filed: 1997-05-07
Granted: 1999-05-11
Abstract: A multiplex frame is of a fixed length and includes a header and a fixed-length field. The fixed-length field is divided into variable-length slots 1 and 2. The length of the variable-length slot 1 is a predetermined fixed length when data to be stored exists and is zero with no data to be stored. The length of the variable-length slot 2 is increased/decreased depending on the length of the variable-length slot 1. Fixed-length data not employing retransmission (e.g., an audio frame) is transmitted in the first variable-length slot and one complete variable-length data employing retransmission (e.g., a data link frame of video) is transmitted in the second variable-length slot. When the multiplex frame thus has a fixed length and the frame length of the data link frame of the variable-length data employing retransmission is changed depending on the length of the fixed-length data not employing retransmission, the transmitting timing of the data link frames can be fixed with respect to the transmission stream of the multiplex frames. Then the boundaries between the data link frames are not lost due to a transmission error, which improves the error robustness. That is to say, even if the slot synchronization is lost due to a transmission error, it is possible to see the next header at once, providing easy resynchronization.
Patent TW-419878-B (TW)
Title: An electric high voltage ac machine
Inventor: LEIJON MATS
IPC: H02K9/19
Filed: 1997-06-10
Granted: 2001-01-21
Abstract: An electric high voltage AC machine intended to be directly connected to a distribution or transmission network (16) comprises at least one winding. This winding comprises at least one current-carrying cinductor, a first layer having semiconducting properties provided around said conductor, a solid insulating layer provided around said first layer, and a second layer having semiconducting properties provided around said insulating layer. In addition grounding means (18, 24, 26, 28) are provided to connect at least one point of said winding to ground.
Patent TW-340976-B (TW)
Title: Thick film chip resistor and its manufacture
Inventor: LII HORNG-JYH
IPC: H01C13/02
Filed: 1997-06-17
Granted: 1998-09-21
Abstract: A sort of thick film chip resistor manufacturing method, including the following steps: a. provision of a number of contact layers on the insulation substrate, b. application of a number of thick-film resistor on the substrate, being each of them in contact with the adjacent contact layers, c. breaking of the substrate into bars, d. application of the end contact on the contact layer, and e. breaking the bars into resistors of individual film thickness, having each of the thick-film chip a resistor including at least 2 layers of separate layers.
Patent TW-398012-B (TW)
Title: Art with a transparent film and a compensating electrode
Inventor: INOUE TOSHIAKI
IPC: H01J29/87
Filed: 1997-07-18
Granted: 2000-07-11
Abstract: A transparent conductive film is formed on an outer surface of a face portion of a face panel and a phosphor screen is formed on an inner surface thereof. A conductive explosion proof band is wound around an outer periphery of a skirt portion of the face panel and the explosion proof band has a grounding potential. A conductive tape is attached along a long side of the face panel and electrically connects the transparent conductive film with the explosion proof band. A compensating electrode extending along a side of the face panel is attached to an upper side of the skirt portion and disposed on a side opposite to the conductive tape with respect to the explosion proof band. An inverse voltage applying portion applies a voltage having a waveform of a polarity inverse to that of the deflection voltage applied to a deflection device to the compensating electrode so as to generate an electric field for canceling an alternating electric field generated from the deflection device.
Patent TW-406376-B (TW)
Title: Method of the DRAM formation
Inventor: JENG SHIANG-YUAN
IPC: H01L21/8242
Filed: 1997-08-22
Granted: 2000-09-21
Abstract: A method of forming the DRAM capacitor with smaller contact aspect ratio and high capacitance is disclosed. First, form the first electric-conductive layer on the semiconductor substrate, and form the first dielectrics on the first electric-conductive layer. After photo-lithographing and etching the first dielectrics and the first electric-conductive layer, the second dielectrics is formed on the substrate and the first dielectrics, and anisotropically etch back the second dielectrics to form the spacer on the sidewall of the first dielectrics and the first electric-conductive layer. Next, form the first silicon oxide layer on semiconductor substrate, the first dielectrics and the sidewall spacer. Photolithograph and etch the first silicon oxide layer wherein the sidewall spacer and the first dielectrics are used for self-alignment etching. Form the second electric-conductive layer on the substrate and expose the surface of the first silicon oxide layer. Next, form the second silicon oxide layer on the second electric-conductive layer and the first silicon oxide layer. Finally, photo-lithograph and etch partial of the second silicon oxide layer to expose part of the second electric-conductive layer, and the contact of the capacitor is formed.
Patent TW-408031-B (TW)
Title: The method of treating the exhaust gases containing halogen gases and/or hydrogen fluoride (HF) gas
Inventor: OMI TADAHIRO
IPC: B01D53/68
Filed: 1997-09-04
Granted: 2000-10-11
Abstract: A method of treating the exhaust gases containing halogen gases and/or hydrogen fluoride gas, which is characterized making the halogen gases and/or hydrogen fluoride (HF) gas to contact with the single element metal (the metal is composed by single element); said single element metal is selected from the group of tin, lead, zinc, zirconium, iron, nickel, molybdenum, manganese, tantalum, and cobalt and/or its uni-element metal compound; making the halogen gases and/or hydrogen fluoride (HF) gas to contact with the single element metal under 100-300 DEG C; and said exhaust gases treatment is a process of dry etching.
Patent TW-347559-B (TW)
Title: Method for reducing contact resistance by using nitrogen ion implantation
Inventor: HWANG JENN-MING
IPC: H01L21/768
Filed: 1997-09-22
Granted: 1998-12-11
Abstract: A method for reducing contact resistance by using a nitrogen ion implantation, which comprises the following steps: (a) forming an insulative layer on the semiconductor substrate formed with a conductive polysilicon region or an N+ diffusion region thereon; (b) selectively etching the insulative layer thereby forming a contact hole exposing the conductive polysilicon region or the N+ diffusion region ; (c) applying a nitrogen ion implantation procedure thereby endowing a non-easily oxidized property on the surface of the conductive polysilicon region or the N+ diffusion region ; and (d) filling the contact hole with a conductive material.
Patent TW-584561-B (TW)
Title: Film-forming fungistatic composition
Inventor: OTA YOICHI
IPC: A61K9/00
Filed: 1997-09-27
Granted: 2004-04-21
Abstract: The present invention provides a composition of film forming antimycotic agent including hydrophilic film forming substances, antimycotic agents and water. Such hydrophilic film forming substances are preferably with the concentration over 0.1 w/v dissolved in water at room temperature. Further, to enhance the permeability of antimycotic agents, the composition might further comprise wetting agents, keratolysis agents and surfactants. The composition of film forming antimycotic agent according to the present invention have a therapeutic effect on dermatophytosis, especially on nail dermatophytosis when it is embocated on the pathological site due to the release property of antimycotic agents and the formation of hydrophilic film with high permeability on stratum corneum and nails.
Patent TW-416930-B (TW)
Title: Process for the purification of hydrogen peroxide, and the process and the plant for manufacture thereof
Inventor: DHALLUIN JEAN-MARIE
IPC: C01B15/023
Filed: 1997-10-15
Granted: 2001-01-01
Abstract: Process for the purification of aqueous solutions of hydrogen peroxide, characterized in that one or more macroligands are added to the said solution and the resulting mixture is forced through an ultrafiltration membrane; use of the process for the preparation of unstabilized ultrapure hydrogen peroxide and plant relating thereto.
Patent TW-523540-B (TW)
Title: Pressure-sensitive adhesive sheet and laminate of pressure-sensitive adhesive sheets
Inventor: IWABUCHI HIROAKI
IPC: C09J7/22
Filed: 1997-11-28
Granted: 2003-03-11
Abstract: There are disclosed a pressure-sensitive adhesive sheet which comprises a substrate sheet, a pressure-sensitive adhesive layer formed on one side of the substrate sheet and a release layer comprising a cured product from an ionizing radiation-curing type releasable resin formed on the other side of the substrate sheet; and a laminate which comprises a plurality of these pressure-sensitive adhesive sheets that are superimposed on one another so that the pressure-sensitive adhesive layer and the release layer directly face each other and the whole surfaces of the pressure-sensitive adhesive layers are covered with the release layers. The above pressure-sensitive adhesive sheets and the laminate formed therefrom can be produced with good workability with a simplified apparatus without the generation of curls, and thus are well suited for use as display labels etc.
Patent TW-523510-B (TW)
Title: Vitronectin receptor antagonists, their preparation and their use
Inventor: WEHNER VOLKMAR
IPC: A61K31/395
Filed: 1998-02-11
Granted: 2003-03-11
Abstract: The present invention relates to compounds of the formula (I) A-B-D-E-F-G, in which A, B, D, E, F and G have the meanings given in the patent claims, to their preparation and to their use as medicaments. The compounds of the invention are used as vitronectin receptor antagonists and as inhibitors of bone resorption.
Patent TW-401573-B (TW)
Title: Methods, apparatuse, and systems for producing and writing cipher keys, reproducing information with a cipher key, and for permitting reproduction of information with a cipher key, and optical disc recorded with a cipher key
Inventor: MOCHIZUKI MASAKI
IPC: G11B20/00
Filed: 1997-12-31
Granted: 2000-08-11
Abstract: Plural program information and a BCA (Burst Cutting Area) number of the optical disc 100 is previously recorded in the optical disc 100. A drive ID is stored in the nonvolatile memory 104a of the reproduction apparatus 104. A user of the reproduction apparatus 104 notifies the BCA number, the drive ID, and a number of preferred program information to the software house (software supplier) 110 on the condition that the user pays for the reproduction of the preferred program information recorded in the optical disc 100. The software house 110 notifies a cipher key to the reproduction apparatus 104 or the user. A title key is calculated in the reproduction apparatus 104 in accordance with the BCA number, the drive ID, and the cipher key. The  preferred information recorded in the optical disc 100 is permitted to be reproduced by using the title key.
Patent TW-361020-B (TW)
Title: Directional-beam generative apparatus and associated method
Inventor: HAGERMAN BO
IPC: H04B7/26
Filed: 1998-01-08
Granted: 1999-06-11
Abstract: Directional-beam generative apparatus, and an associated method for a radio communication station forms directional antenna beam patterns for the communication of communication signals with remote communication stations operable in a TDMA communication system. Channels are allocated for effectuation of communications between the radio communication station and the remote stations responsive to indications of locations at which the remote communication stations are indicated to be positioned. Remote communication stations indicated to be positioned within a selected area are allocated to channels formed upon a single carrier.