baber/WOPTO huggingface dataset:
Patent TW-409270-B (TW)
Title: Ion source chamber of the high energy implanter settled with the impurities filtration apparatus
Inventor: TSAI PEI-WEI
IPC: H01J37/00
Filed: 1999-01-19
Granted: 2000-10-21
Abstract: This invention provides a ion source chamber which is used in the high energy implanter. Said source chamber comprises one chamber body which is used to produce the ion source to make said high energy implanter proceeding ion implantation toward one semiconductor chip; a vent tube has one end connected on said chamber body, used to vent the gas inside said chamber; a release valve installed on another end of said vent tube which is used to vent the gas over a predetermined gas pressure inside said chamber body; and, one filtration apparatus which is settled between said vent tube and the pressure-releasing valve, is used to filter the tiny impurities contained inside the vent gas by said vent tube to avoid it from flowing into said pressure-releasing valve, which unable to close tightly when the release valve is not releasing the gas.
Patent TW-412755-B (TW)
Title: Resistor elements and methods of producing same
Inventor: UEDA YUKIKO
IPC: H01C17/00
Filed: 1999-01-28
Granted: 2000-11-21
Abstract: A resistor element has a ceramic body with a first outer electrode and a second outer electrode formed on its mutually opposite externally facing end surfaces and a plurality of mutually oppositely facing pairs of inner electrodes inside the ceramic body. Each of these pairs has a first inner electrode extending horizontally from the first outer electrode and a second inner electrode extending horizontally from the second outer electrode towards the first outer electrode and having a front end opposite and separated from the first inner electrode by a gap of a specified width, these plurality of pairs forming layers in a vertical direction. The gap of at least one of these plurality of pairs of inner electrodes is horizontally displaced from but overlapping with the gaps between the other pairs of inner electrodes. For producing such a resistor element, the distance of displacement is set according to a given target resistance value intended to be had by the resistor element. Alternatively, the thickness of those portions of the ceramic body between at least one of mutually adjacent pairs of the inner electrodes is different form the thickness of the portions of the ceramic body between the other mutually adjacent pairs of the inner electrodes.
Patent TW-417101-B (TW)
Title: In a system for creating, reading and writing on rotatable information storage media, an apparatus for two-sided writing
Inventor: DECUSATIS CASIMER M
IPC: G11B7/125
Filed: 1999-02-01
Granted: 2001-01-01
Abstract: An information storage system employs rotatable disks with embedded tracks for precise control of writing and reading operations. Advantage is taken of the reference tracks on one of the disks to also control laser spot positioning on the other side of the disk. The edges of the reference tracks are employed to assure accurate positioning and the presence of multiple information tracks between adjacent reference tracks.
Patent TW-434880-B (TW)
Title: Semiconductor memory
Inventor: SUEMATSU YASUHIRO
IPC: G11C11/401
Filed: 1999-02-24
Granted: 2001-05-16
Abstract: It is difficult in the conventional technique to simultaneously test a plurality of banks comprising spare cells, and also to eliminate the current consumption in the test mode. The present invention is provided to solve the problem of the conventional technique. The mode set register 20 outputs a plurality of multi bank write (MBW) signals in test mode. The BS latch circuit 19 generates the signals SCBS of spare column decoders 37, 38 from selecting banks BK0, BK1 and generates the signals CBS0, CBS1 of selecting column decoders 30, 31. The write driving circuits 33, 34 employs the column decoders 30, 31 to write data in the selected column and employs the spare column decoders 37, 38 to write data in the selected spare column.
Patent TW-461898-B (TW)
Title: Stabilisation of organic polyisocyanates
Inventor: RABE HANSJURGEN
IPC: C08G18/70
Filed: 1999-03-18
Granted: 2001-11-01
Abstract: The present invention relates to a method for stabilizing organic polyisocyanates via using C1-C4-alkyl 3,5-di-tert.-butyl-4-hydroxyphenyl-propionate.
Patent TW-568829-B (TW)
Title: Laminated film
Inventor: WATANABE JUN
IPC: B32B15/08
Filed: 1999-03-20
Granted: 2004-01-01
Abstract: A laminated film comprises at least an aluminum layer and, superimposed on one side thereof by extrusion lamination, a linear low-density polyethylene layer, this linear low-density polyethylene layer prepared with the use of a metallocene olefin polymerization catalyst and having a density of 0.895 to 0.930 g/cm<3> and an MFR (190 DEG C) of 0.1 to 100 g/10 min, wherein the linear low-density polyethylene layer at its surface exhibits an oxygen concentration of linear low-density polyethylene per se ranging from 1.0 to 1.4 atomic %. The laminated film which has an excellent balance of aluminum bond strength and heat sealing properties of linear low-density polyethylene layers and it can be provided at low cost. Further, a laminated film comprising at least the linear low-density polyethylene layer, the aluminum layer and a substrate layer arranged in this order can be provided at low cost by adding a layer or layers to the laminated film obtained by the extrusion lamination. This laminated film is suitable to, for example, a packaging material for dry food.
Patent TW-416221-B (TW)
Title: Method and apparatus for resizing an image frame including field-mode encoding
Inventor: FLORENCIO DINEI AFONSO FERREIR
IPC: H04N7/46
Filed: 1999-05-07
Granted: 2000-12-21
Abstract: A method (300; 500) and apparatus (100) for reducing information artifacts imparted to a decoded video information stream by an MPEG-like decoder utilizing discrete transform (DCT) domain compression to produce a size-reduced reference image information frame. Specifically, the invention responsively selects one of a plurality of pre-defined DCT coefficient matrices in response to the amount of compression to be imparted to the reference image information frame, and the presence or absence of field-mode encoding the reference image information frame.
Patent TW-464883-B (TW)
Title: Organic positive temperature coefficient thermistor
Inventor: SHIGETA NORIHIKO
IPC: H05B3/14
Filed: 1999-08-02
Granted: 2001-11-21
Abstract: The invention provides an organic positive temperature coefficient thermistor comprising at least two polymer matrices, a low-molecular organic compound and a conductive particle having spiky protuberances. For the polymer matrices, at least two thermoplastic polymer matrices having varying melting points or at least one thermoplastic polymer matrix and at least one thermosetting polymer matrix are used. It is thus possible to provide an organic positive temperature coefficient thermistor which has sufficiently low room-temperature resistance and a large rate of resistance change between an operating state and a non-operating state, and can operate with a reduced temperature vs. resistance curve hysteresis, ease of control of operating temperature, and high performance stability.
Patent TW-525249-B (TW)
Title: CVD nanoporous silica low dielectric constant films
Inventor: MANDAL ROBERT P
IPC: H01L23/522
Filed: 1999-09-07
Granted: 2003-03-21
Abstract: A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.
Patent TW-426882-B (TW)
Title: Overlap statistic process control with efficiency by using positive and negative feedback overlap correction system
Inventor: YOU SHIN-SHENG
IPC: H01L21/027
Filed: 1999-10-29
Granted: 2001-03-21
Abstract: This invention is about the systematized correction method of the overlap error for the electric circuit pattern on the multi and continuous thin film layers. The method includes the followings. At first, the absolute position error (or the average value) of previous one (or previous ones) batch on the current layer is calculated and is used as the basis of negative feedback overlap correction for the current batch on the current layer. Then, the residual absolute position error of current batch at previous layer is calculated and is used as the basis of positive feedback overlap correction for the current batch on the current layer. Based on the negative feedback overlap correction and the positive feedback overlap correction stated above, the required overlap error for the correction of current batch on the current layer can be obtained. In addition, the absolute position error of each one batch can be used as the basis to monitor the stability of stepper, mask and process.
Patent TW-498065-B (TW)
Title: Process for the production of acetic acid
Inventor: MUSKETT MICHAEL JAMES
IPC: C07C53/08
Filed: 1999-11-15
Granted: 2002-08-11
Abstract: In a process for the continuous production of acetic acid by feeding methanol and/or a reactive derivative thereof and carbon monoxide to a carbonylation reactor wherein there is maintained a liquid reaction composition comprising methyl acetate, water, group VIII noble metal carbonylation catalyst, hydrocarbyl halide co-catalyst, optionally at least one promoter, and acetic acid, the methyl acetate concentration in the liquid reaction composition is maintained at a pre-determined value by monitoring the ratio of methanol and/or reactive derivative thereof to carbon monoxide being converted to acetic acid and adjusting the methanol and/or reactive derivative thereof feed rate in response thereto in a manner such that the methyl acetate concentration is maintained at the pre-determined value. This can assist in reducing build up of methyl acetate in the reactor during periods of loss of activity.
Patent TW-505710-B (TW)
Title: Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
Inventor: NAKAMURA KOZO
IPC: C30B29/06
Filed: 1999-11-18
Granted: 2002-10-11
Abstract: A method for growing a silicon single crystal by Czochralski method, in which, let the pulling speed be V (mm/min) and an average value of the inner-crystal temperature gradient in the pulling axis direction within a temperature range beyween the silicon melting point and 1350 DEG C, be G (DEG C/mm), V/G range from 0.16 to 0.18 mm2/DEG C min of a position between the crystal center position and a crystal outer periphery position, and a ratio at the crystal outer surface to that at the crystal center, G outer/G center, of an average value G of an in-crystal temperature gradient in the pulling axis direction within a temperature range between the silicon melting point and 1350 DEG C be up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, in which an oxygen concentration is controlled to up to 13 x 1017 atoms/cm3; the initial heat treating temperature is at least below 500 DEG C and the temperature is raised at a rate below 1 DEG C/min at least between 700 and 900 DEG C, thereby making an uniform in-plane distribution on the wafer surface to an arbitrary oxygen precipitation density level.
Patent TW-434618-B (TW)
Title: Electromechanical switching device package with controlled impedance environment
Inventor: MARTICH MARK E
IPC: H05K1/02
Filed: 1999-12-02
Granted: 2001-05-16
Abstract: A reed switch package (100) is disclosed that includes a reed switch (111) with at least one electrical signal path (106). A cylindrical ground shield (110) is provided about the reed switch (11A). Ground terminals (108) are connected to opposing sides of the ground shield (110) so that the ground terminals (108) are on opposing sides of the signal terminal (106) and lie in the same plane. The reed switch (111) resides on a support substrate (222). An electrically conductive signal via (134) extends through the main body (212) and connects to the signal terminal (106). Ground vias (134) extend through the main body (212) and respectively connect to the ground terminals (108). The grounds vias (134) are on opposing sides of the signal via (134) and lie in the same plane as the signal via (14). The signal and ground via (134) exit at the bottom of the main body (212) and are connected to a circuit via solder balls (224) to provide a compact surface mount package with a controlled impedance environment.
Patent TW-474872-B (TW)
Title: Child protecting clothes for vehicles
Inventor: MASUDA MITSUNORI
IPC: B60N2/26
Filed: 1999-12-22
Granted: 2002-02-01
Abstract: The present invention relates to child protecting clothes for vehicles, used with a seat belt so as to protect a child sitting on a seat in the vehicle from a collision of an accident. As compared with a related art child seat, the child protecting clothes perform following advantages. The protective clothes can be put on a child as the safety of the child is secured; manufactured at a low cost; and give the person wearing the clothes a certain degree of freedom of physical movement. A back member (10B) of the protective clothes is formed double of an inner cloth portion (10B1) and an outer cloth portion (10B2). A seatbelt (C) can be inserted between the inner and outer cloth portions (10B1, 10B2) of the back member.
Patent TW-467989-B (TW)
Title: Earthquake proofing reinforcing metal fitting
Inventor: IWAKAWA TORU
IPC: E04B1/38
Filed: 2000-01-21
Granted: 2001-12-11
Abstract: An earthquake-proofing reinforcing metal fitting for reinforcing a wooden building by attaching it to the joint part of a building structural material such as a foundation, a column, a beam, a girder, and others so that the wooden building is not collapsed even if a strong vibration is applied to it by an earthquake or a typhoon. It comprises a reinforcement base material (1) formed by forming fixed pieces (11, 11) by twisting and bending. Both end parts of a plate material are made of high tensile steel in one direction and by forming a bent dwelled part (13) or a curved dwelled part (14) at its intermediate part and a damping member (2) having rubber elasticity. Wherein, the reinforced base material (1) is fixed to a building structural material (A) through the damping member (2).
Patent TW-460980-B (TW)
Title: A device and a method for thermally treating substrates
Inventor: DRESS PETER
IPC: H01L21/00
Filed: 2000-02-14
Granted: 2001-10-21
Abstract: The invention relates to a device and a method for thermally treating substrates, in which the substrate is heated by a heating plate. Better thermal homogeneity is obtained by the following method. The heating plate is heated using a plurality of heating elements that can be separately controlled, the temperature of the heating elements is measured and a PID controller controls the heating process. In addition, the temperature of the substrate surface and the rear side of the heating plate is locally measured. The temperature distribution over the substrate surface is determined according to the measured temperatures and set values for the temperature of the individual heating elements are determined and transmitted to the PID controller.
Patent TW-576873-B (TW)
Title: Method of growing a thin film onto a substrate
Inventor: LINDFORS SVEN
IPC: B01J19/00
Filed: 2000-04-14
Granted: 2004-02-21
Abstract: A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALCVD method by subjecting the substrate to the alternate and successive surface reactions of at least two vapourized reactants. The method includes the step of conducting the vaporised reactant through a purifier before feeding the reactant into the reaction chamber. According to the invention, inactive gas is fed into the first conduit via a second conduit, connected to the first conduit at a connection point, during the time interval between the vapour-phase pulses of the reactant so as to form a gas phase barrier against the flow of vaporised reactants from the reactant source via the first conduit into the reaction chamber. The inactive gas is withdrawn from the first conduit via a third conduit connected to the first conduit. The third conduit is maintained at a temperature equal to or higher than the condensation of the vapour-phase reactant and it is connected to the first conduit at a point upstream of the second conduit. By means of the invention it is possible efficiently to control the process, to reduce the number of moving parts subjected to the hot zone of the process and to cut investment costs.
Patent TW-548999-B (TW)
Title: Methods and systems for error handling in radiocommunication systems employing pre-paging
Inventor: HU YUN-CHAO
IPC: H04W68/00
Filed: 2000-05-10
Granted: 2003-08-21
Abstract: Methods and systems for handling errors associated with pre-paging in radiocommunication networks are described. If radio contact to a terminal is lost after a successful pre-page, the network can detect this event. Then, when the corresponding call delivery message is received, the network can re-page the terminal and re-allocate radio resources if the terminal is available. Additionally, a guard timer can be started when radio resources are first allocated. If the call delivery message is not received prior to expiration of the timer, the radio resources can be deallocated to avoid wasting such resources in the event that the call delivery message is lost in the network.
Patent TW-473875-B (TW)
Title: Formation of 5F2 cell with partially vertical transistor and gate conductor aligned buried strap with raised shallow trench isolation region
Inventor: GRUENING ULRIKE
IPC: H01L21/8242
Filed: 2000-05-10
Granted: 2002-01-21
Abstract: A method and structure for manufacturing an integrated circuit device includes forming a storage device in a substrate, lithographically forming a gate opening in the substrate over the storage device, forming first spacers in the gate opening, forming a strap opening in the substrate using the first spacers to align the strap opening, forming second spacers in the strap opening, forming an isolation opening in the substrate using the second spacers to align the isolation opening, filling the isolation opening with an isolation material, removing the first spacers and a portion of the second spacers to form a step in the gate opening, (wherein the second spacers comprise at least one conductive strap electrically connected to the storage device) forming a first diffusion region in the substrate adjacent the conductive strap, forming a gate insulator layer over the substrate and the step, forming a gate conductor over a portion of the gate insulator layer above the step, forming a second diffusion region in the substrate adjacent the gate conductor and forming a contact over the diffusion region and isolated from the gate conductor, wherein a voltage in the gate conductor forms a conductive region in the substrate adjacent the step and the conductive region electrically connects the strap and the contact.
Patent TW-452996-B (TW)
Title: Chip type antenna
Inventor: TSENG WEN-JEN
IPC: H01Q5/00
Filed: 2000-05-11
Granted: 2001-09-01
Abstract: The invention relates to a chip type antenna comprised by a substrate, a feeding port, a feeding wire, a matching unit and a meander conductor, in which the substrate is formed of dielectric material and the length of the variable meander conductor can control the center frequency of the antenna. The matching unit is composed of a grounded floor and a matching metal conductor, in which the matching metal conductor provides transmission function upon short-circuit to allow antenna achieving broadband effect ideal for being applied to wireless LAN and personal mobile communication transmission equipment.
Patent TW-495595-B (TW)
Title: Gate valve for semiconductor process system
Inventor: OKA HIROKI
IPC: F16K3/18
Filed: 2000-06-01
Granted: 2002-07-21
Abstract: A gate valve (20) for a semiconductor process system includes a base yoke (28) movable along a guide portion (22) toward or away from a valve seat (22) enclosing an opening (14). A first stop (56) is mounted at an upper end of the guide portion (26) on the side of the valve seat (22) of the base yoke (28) to limit range of displacement thereof. A rotatable swing yoke (34) is mounted on the base yoke (28), and a valve seat (24) is mounted on an upper end portion thereof. The base yoke (28) and swing yoke (34) are interconnected by means of a ink member (36) that is retractable by bending at an intermediate portion thereof and a component (44) having both spring and impeding actions. An air actuator (52) has a reciprocating rod (54) connected to a mediating member (38) at the intermediate portion of the ink member (36).
Patent TW-524782-B (TW)
Title: Conditioning apparatus for molten glass with optimized electrical heating and improved thermal homogeneity of the glass
Inventor: REESSING FRIEDRICH
IPC: C03B7/098
Filed: 2000-07-04
Granted: 2003-03-21
Abstract: The conditioning apparatus for molten glass can fulfill in its single parts different tasks influencing temperature thermal homogenization of the glass chemical homogenization of the glass (stirrer cell) dosing (plunger cell, outlet area) and others. The apparatus is formed by direct electric heated metal walls with predominant ceramic insulation where with predominant ceramic insulation where the current flanges are optimized in this kind that 1. the thermal homogeneity of the glass at the outlet of the apparatus is better than K, 2. the consumption of noble metals and electric energy is decreased. To this each current flange (2) in his invention appropriate design, consisting of two-part or preferred three-part style (minimum two or three radial zones) is optimized with the aid of mathematical modeling of the temperature field a.o. with respect to the planned technological conditions and the available room. From this results the design of the apparatus with the geometry of the three radial zones, consisting of different materials graded with respect to their thermal and electrical load. The outside lying radial zone of the current flange is cooled by a pair of air ducts welded on it preferred with the medium air. The electric connection is ordered at the outer edge and is cooled additionally by convection and radiation. The cooling of the current flange (2) and particularly the electric connection areas (13) is dimensioned depending on conditions of use to hold the thermal, mechanical and electrical loads at values below the allowed limits. For the cooling is used preferred air or air containing water vapour, at special working conditions water.