baber/WOPTO huggingface dataset:
Patent TW-513286-B (TW)
Title: Antiparasitic composition for the surroundings of animals and uses of the same
Inventor: SMITH JAMES WILLIAM
IPC: C05G3/60
Filed: 1997-08-20
Granted: 2002-12-11
Abstract: Pesticidal composition comprising 0.0005 to 95% of carbaryl and 0.000001 to 10% of an active material of formula (I), in which: R1 is a halogen atom or a CN or methyl group; R2 is S(O)nR3 or 4,5-dicyanoimidazol-2-yl or haloalkyl; R3 is alkyl or haloalkyl; R4 represents a hydrogen or halogen atom; or an NR5R6, S(O)mR7, C(O)R7 or C(O)O-R7, alkyl, haloalkyl or OR8 radical or an -N=C(R9)(R10) radical; R5 and R6 independently represent a hydrogen atom or an alkyl, haloalkyl, C(O)alkyl, alkoxycarbonyl, S(O)rCF3 radical; or R5 and R6 can together form a divalent alkylent radical which can be interrupted by one or two divalent heteroatoms, such as oxygen or sulphur; R7 represents an alkyl or haloalkyl radical; R8 represents an alkyl or haloalkyl radical or a hydrogen atom; R9 represents an alkyl radical or a hydrogen atom; R10 represents a phenyl or heteroaryl group optionally substituted by one or a number of halogen atoms or groups such as OH, -O-alkyl, -S-alkyl, cyano or alkyl; R11 and R12 represent, independently of one another, a hydrogen or halogen atom and optionally CN or NO2 but H or halogen are preferred; R13 represents a halogen atom or a haloalkyl, haloalkoxy, S(O)qCF3 or SF5 group; m, n, q and r represent, independently of one another, an integer equal to 0, 1 or 2; X represents a trivalent nitrogen atom or a C-R12 radical, the other three valencies of the carbon atom forming part of the aromatic ring; with the proviso that, when R1 is methyl, then either R3 is haloalkyl, R4 is NH2, R11 is Cl, R13 is CF3 and X is N; or else R2 is 4,5-dicyanoimidazol-2-yl, R4 is Cl, R11 is Cl, R13 is CF3 and X is =C-Cl, is applied to the said site.
Patent TW-467825-B (TW)
Title: Tube lining and the manufacturing method therefor
Inventor: KAMIYAMA TAKAO
IPC: B29D23/00
Filed: 1997-09-04
Granted: 2001-12-11
Abstract: A tube lining and the manufacturing method for meeting all of the requested characteristics. A tube lining 1 comprising: a tubular resin absorber having external surface coated with plastic film and harden resin dipped within said resin absorber 2, wherein the plastic film is of five layers tubular multiple composite film having surface film layer 3-1/thermal reactive adhesive film 3-2/intermediate film layer 3-3/thermal reactive adhesive film layer 3-4/fused bonding film layer 3-5. According to the present invention, as the multi-layer composite film 3 is composed of the intermediate film layer 3-3 sandwiched between the middle, a surface film layer 3-1, and a fused bonding film layer 3-5 respectively adhered to either sides of the intermediate film layer 3-3 by thermal reactive adhesive layer 3-2 so as to integrally form a five-layer structure, the requested characteristics may be carried by respective layers 3-1 to 3-5 thereby a tube lining 1 meeting all of the feature is achieved.
Patent TW-343365-B (TW)
Title: Si/SiGe vertical junction field effect transistor
Inventor: KHALID EZELDIN ISMAIL
IPC: H01L29/808
Filed: 1997-09-24
Granted: 1998-10-21
Abstract: A junction field effect transistor comprising: a first semiconductor layer of a first type; a second semiconductor layer of a lightly doped first type formed over the first semiconductor layer; a third semiconductor layer of a second type formed over the second semiconductor layer having an opening therein exposing a portion of the second semiconductor layer, a layer of dielectric material formed over the third semiconductor layer having an opening therein communicating with the opening in the third semiconductor layer, a fourth semiconductor layer of a first type of Si1-x Gex where x increases with thickness formed in the opening of the third semiconductor layer; a fifth semiconductor layer of a first type of Si1-y Gey where Y is substantially constant with thickness formed in the opening of the third semiconductor layer, and a sixth semiconductor layer of a first type of Si1-z Gez where z decreases with thickness formed in the opening of the layer of dielectric material.
Patent TW-354863-B (TW)
Title: Galvanic cell having optimum internal volume for the active components
Inventor: MALAY MANUEL R
IPC: H01M6/00
Filed: 1997-09-25
Granted: 1999-03-21
Abstract: A galvanic cell having a negative electrode; a positive electrode; a separator between the negative and the positive electrode; and an electrolyte dispersed within a two-part conductive housing, the first part of the conductive housing being a cylindrical cupped container having an edge and being electrically connected to one of the electrodes and the second part of the housing being a circular cover having a peripheral flange, the cover being electrically connected to the other electrode and in which the first part container and the second part cover are electrically insulated from each other by an insulating gasket disposed between and compressed between the edge of the container and the peripheral flange of the cover, thereby defining an enclosed volume within the housing; the improvement wherein the height of the cylindrical cupped container is greater than 4 times the height of the circular cover and in which the thickness of the gasket is no greater than 1.3 times the height of the cover.
Patent TW-347541-B (TW)
Title: Capacitor with an oxygen-barrier-layer and a first electrode made up from unnoble metal
Inventor: GUNTHER SCHINDLER
IPC: H01L29/92
Filed: 1997-09-30
Granted: 1998-12-11
Abstract: A capacitor in an integrated semiconductor circuit, which is characterized in comprising: a first electrode (7) which is basically made up from noble-metal-free conductive material; a second electrode (10); a capacitor-dielectric (9) insulating the first electrode (7) from the second electrode (10) and consisting of a dielectric material or a ferroelectric material having a high ε value; a barrier layer to suppress the oxygen-diffusion, the barrier layer being disposed on the first electrode (7) and covering the whole interface between the first electrode (7) and the capacitor dielectric (9).
Patent TW-347540-B (TW)
Title: Film condenser and metalized film
Inventor: MOMOSE MITURU
IPC: B32B3/00
Filed: 1997-11-11
Granted: 1998-12-11
Abstract: A metalized film comprising a base film (3) formed from an insulating material, and a metal coating layer (4) formed on the base film (3), in which a plurality of uncoated portions are formed as area partition margins (12) in the metal coating layer (4) so as to respectively form, in the metal coating layer (4), a plurality of electrode regions (14), a plurality of fuse connecting regions (16) surrounded by two or more of the electrode regions (14), and a plurality of fuse portions (18A-18D); the fuse portions (18A-18D) electrically connect each one of the fuse connecting regions (16) with the electrode regions (14) surrounding the one of the fuse connecting regions (16).
Patent TW-377452-B (TW)
Title: Method and apparatus for powering an electrodeless lamp with reduced radio frequency interference
Inventor: SIMPSON JAMES E
IPC: H05B41/24
Filed: 1997-11-21
Granted: 1999-12-21
Abstract: An electrodeless lamp wave-guide structure includes tuned absorbers for spurious RF signals. A lamp wave-guide with an integral frequency selective attenuation includes resonant absorbers positioned within the wave-guide to absorb spurious out-of-band RF energy. The absorbers have a negligible effect on energy at the selected frequency used to excite plasma in the lamp. In a first embodiment, one or more thin slabs of lossy magnetic material are affixed to the sidewalls of the wave-guide at approximately one-quarter wavelength of the spurious signal from an end wall of the wave-guide. The positioning of the lossy material optimizes absorption of power from the spurious signal. In a second embodiment, one or more thin slabs of lossy magnetic material are used in conjunction with a wave guide filter element for rejecting certain bands. In a third embodiment, one or more microstrip filter elements are tuned to the frequency of the spurious signal and positioned within the wave guide to couple and absorb the spurious signal's energy. All three embodiments absorb negligible energy at the selected frequency and so do not significantly diminish the energy efficiency of the lamp.
Patent TW-358936-B (TW)
Title: Magnetic head mover and optic head mover
Inventor: KAMATA SHIGEYUKI
IPC: G11B7/09
Filed: 1997-12-05
Granted: 1999-05-21
Abstract: A magnetic head mover, having a movable loading head, for having the layered iron oxygen formed in coil on the iron oxygen layer and the coil movable, and the exciter in response to said coil for securing the magnetic head and the yoke board.
Patent TW-344023-B (TW)
Title: Shelf device for a refrigerator
Inventor: SAITO MASAO
IPC: F25D23/10
Filed: 1997-12-09
Granted: 1998-11-01
Abstract: A shelf device for a refrigerator, which comprises: a heat-insulating cabinet the interior of which being arranged into a refrigerating chamber and having a front opening; a heat-insulating door openably sealing the front opening of the heat-insulating cabinet; and a net shelf disposed in the refrigerating chamber; which is characterized in comprising: a base shelf installed on the upper portion of the refrigerating chamber; a local shelf installed beneath the base shelf and being smaller than the base shelf; and a hook device hooking a portion of the local shelf.
Patent TW-527279-B (TW)
Title: Superplastic alloy-containing conductive plastic article for shielding electromagnetic interference and process for manufacturing the same
Inventor: JUANG DUNG-HAN
IPC: H05K9/00
Filed: 1997-12-30
Granted: 2003-04-11
Abstract: The present invention provides a superplastic alloy-containing conductive plastic article for shielding electromagnetic interference. The conductive plastic article is a three-layer structure, in which the outer layers are plastic material, and the inner layer is a superplastic alloy. The requirements for the raw materials are that the melting point of the superplastic alloy is higher than the softening point of the plastic, and the superplastic alloy has superplasticity at a temperature higher than the softening point of the plastic. The conductive plastic article can be manufactured in one processing stage, has the same shielding effectiveness as that of a conventional metal plate article, and can take a delicate and complicated form as that of a conventional plastic article. Moreover, the superplastic alloy contained therein has a uniform thickness and good adherence to plastic.
Patent TW-421760-B (TW)
Title: Method and system for creating and using a logotype contact module with a smart card
Inventor: KAWAN JOSEPH C
IPC: G06K19/077
Filed: 1998-01-14
Granted: 2001-02-11
Abstract: A method and system for providing specialized contacts for electronic information on a smart card in the pattern of a source identifier and such that a machine may contact and read the information upon placement of the card in a reading device. The contact points for reading information on the card are formed by etching a substrate attached to the logic element of the smart card. The etching allows both the foreground and the background of an image, in two selected colors, to be included within the contact area of the smart card, with the foreground constituting the conductor and the background the resist.
Patent TW-364149-B (TW)
Title: Method for producing an electric incandescent lamp
Inventor: RITTNER ROLAND
IPC: H01K9/08
Filed: 1998-02-09
Granted: 1999-07-11
Abstract: The invention relates to a method for producing an electric incandescent lamp which has at least one incandescent filament (31) and an anti-dazzle device (20). According to the invention, the course of the method, an end (31a) of an incandescent filament (31) is threaded into a notch (23) on the edge of the anti-dazzle device (20) by melting the material of the anti-dazzle device (20) in the region of the notch (23) so that the melt wets the incandescent filament end (31a) arranged in the notch (23) and the incandescent filament end (31a) is embedded in the solidified material (20a) of the anti-dazzle device (20) after the melt has solidified.
Patent TW-366295-B (TW)
Title: Manufacturing process of roller blade wheel bearing hole
Inventor: YANG YUE-LING
IPC: A63C17/00
Filed: 1998-02-10
Granted: 1999-08-11
Abstract: Manufacturing process of roller blade wheel bearing hole, bearing holes disposed in parallel to the wheel base of a roller blade and on the bottom on both sides and spaced in a plurality of sets, having each of the 2 bearing holes opposite one to the other be made of progressive two-step punching of thin extruded aluminum where, in the first punching the bearing hole forming inward in a washer area of thick and round shape and, in the second punching, the bearing hole form round shape, forming a taper in the housing of the external cavity, for housing of a tapered nut for securing the anti-slip screw, to save material on one hand while keeping the washer from protruding that would require more working hours and on the other side, in terms of structure, forming a thickened round-shape washer, as a simplified punching process as required by mass production at a reduced cost, for enhanced competitively.
Patent TW-436947-B (TW)
Title: Improved monolithic microwave integrated circuit (MMIC) and MMIC circuit structure
Inventor: MCKAY THOMAS G
IPC: H01L21/60
Filed: 1998-02-18
Granted: 2001-05-28
Abstract: An MMIC includes I/O pads on the back side coupled to active circuit structures on the front side by standard through-the-substrate vias. The front side is covered by a passivation layer and the back side I/O pads facilitate testing utilizing standard wafer probing equipment. The back side I/O pads are formed utilizing standard MMIC process technology.
Patent TW-449879-B (TW)
Title: Process to integrate silicide and self-aligned contact without adding photomask
Inventor: HUANG JEN-MING
IPC: H01L21/768
Filed: 1998-04-24
Granted: 2001-08-11
Abstract: The present invention proposes a process to integrate silicide and self-aligned contact, which includes the following steps: providing a semiconductor substrate comprising a logic area and a memory area, wherein the logic area and the memory area comprise at least a MOS respectively, and the MOS includes a gate, source/drain, and a passivation layer on the gate for defining the gate and hard mask layer, and there is further a spacer on each of both sides of the gate structure; form the first insulation layer on the surface of the logic area and the memory area; form a bottom photoresist layer on the first insulation layer; form an upper photoresist layer on the bottom photoresist layer of the memory area; remove the bottom photoresist layer, the first insulation layer, the hard mask layer and part of the spacer located above the passivation layer in the logic area; remove the passivation layer in the logic area; remove the residual bottom photoresist layer and the residual first insulation layer on the source/drain in the logic area; remove the upper photoresist layer and bottom photoresist layer in the memory area; form a self-aligned heat-resistive silicide on the surface of the MOS gate and source/drain in the logic area; and form a second insulation layer on the surface of logic area and the memory area, and form a self-aligned contact opening in the memory area to expose the surface of the substrate of the drain/source.
Patent TW-436977-B (TW)
Title: Method for producing shallow trench isolation
Inventor: JUANG YUAN-CHI
IPC: H01L21/76
Filed: 1998-05-04
Granted: 2001-05-28
Abstract: A method for producing a shallow trench isolation (STI) comprises, prior to forming a trench by etching, forming a gate oxide layer and a polysilicon layer for being used as a wire. The polysilicon layer can be used as a stress buffer layer for the silicon nitride layer and the silicon substrate. And the gate oxide layer is deposited on the surface of a planar substrate. Therefore, a thinner gate oxide layer, that is typically formed in a conventional process, will not be formed; and there is no need to worry about an increased current leakage of the device.
Patent TW-429238-B (TW)
Title: Ferroelectric film formation composition and ferroelectric film formation method
Inventor: KAMISAWA AKIRA
IPC: H01L21/316
Filed: 1998-08-19
Granted: 2001-04-11
Abstract: Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking to obtain a ferroelectric film. As a consequence, even when forming a ferroelectric film such as a PZT or PLZT film containing a II group element in the periodic table, a stable ferroelectric film formation solution which prevents neither crystallization nor gelation and is reduced in a change with time in the viscosity thereof can be obtained. A ferroelectric film which contains a II group element and has excellent ferroelectric properties can be thus produced with ease.
Patent TW-382756-B (TW)
Title: Method for forming passivation in integrated circuits
Inventor: LIN SHR-CHI
IPC: H01L21/30
Filed: 1998-09-18
Granted: 2000-02-21
Abstract: A method for forming a passivation in an integrated circuit (IC) is to use a chemical vapor deposition technique to deposit a film mainly consisted of SiO2 on a chip by using SiH4 and N2O as the reactive gases. during the film formation process using the these gases, gradually adding NH3 or N2 into the system to gradually change the film component into SiON until an appropriate deposition thickness has been reached thereby completing the formation of the passivation. The structure of the passivation near the bottom thereof is mainly consisted essentially of SiO2 and the structure of the passivation near the top thereof is mainly consisted of SiON. Therefore a passivation with the characteristics of low stress at the metal interface and a resistance to moisture penetration is formed to avoid the voids in the metal interconnect and achieve a good diffusion barrier effect.
Patent TW-449990-B (TW)
Title: A partially matched filter for spread spectrum communication
Inventor: LIN WEN-CHANG
IPC: H04B1/7075
Filed: 1998-12-10
Granted: 2001-08-11
Abstract: A method of acquiring a transmitted pseudo noise (PN) code c(t) from a received signal r(t) that is data modulated. The method includes, for a BPSK modulated signal, multiplying the received signal r(t) by cos(ω0t) and sin(ω0t), respectively to produce in-phase and quadrature (I-q) down converted signals. Then multiplying the I-Q down converted signals by the PN code c(t), having a second PN code phase, to produce f(t) and g(t) respectively. Thereafter, summing separate contiguous portions of f(t) and g(t) and multiplying the summed portions of f(t) and g(t) by a matrix. The matrix represents data patterns within an interval MTc that spans the separate contiguous portions of f(t) and g(t). Lastly, the results of the matrix multiplication are compared to a threshold value to determine if the first PN code phase is equal to the second PN code phase.
Patent TW-513429-B (TW)
Title: Tetracyclic analogues of camptothecins, their preparation processes, their use as medicaments and the pharmaceutical compositions containing them
Inventor: BIGG DENNIS
IPC: A61P43/00
Filed: 1998-12-14
Granted: 2002-12-11
Abstract: The invention relates to new tetracyclic analogues of camptothecin, their preparation processes, their use as medicaments and the pharmaceutical compositions containing them. Said analogues, which include in particular 3-hydroxy-3-(4-oxo-4,6-dihydroindolizino[1,2,b]quinoline-2-yl)pentanoic acid, have a powerful biological activity inhibiting topoisomerase I and/or topoisomerase II.
Patent TW-394728-B (TW)
Title: An integrated forming production for a double-layer bag for holding planar objects
Inventor: SHIE MEI-LI
IPC: B29C69/00
Filed: 1998-12-31
Granted: 2000-06-21
Abstract: This is an integrated forming production method for a double-layer bag for holding planar objects. Materials of the upper, middle, and lower layer are drawn tightly by a tightening device. The upper and lower materials are separately trimmed to pre-determined patterns. Three-layer materials, which are separately introduced to a set direction by a guiding device for overlapping and gathering, are outputted and welded by an welding equipment. The scrap material in between the upper and lower layer will be drawn out and recycled. The semi-finished product will be cut and trimmed to an even finished product by a cut-trim equipment. The scrap band material on both sides will be drawn out and gathered for recycling. The finished product will be sent by a conveyor to projector, which is used to project the product to a stopper for gathering.
Patent TW-436428-B (TW)
Title: Method of forming a reflective printed pattern
Inventor: SHR YING-JI
IPC: B41M1/30
Filed: 1999-01-08
Granted: 2001-05-28
Abstract: This invention relates to a method of forming a reflective printed pattern, comprising the manufacturing steps of: using a screen printing method to screen print the desired pattern on a substrate using a mixture mixed with aluminum powder and adhesive, which the substrate can be any material capable of being adhered with the adhesive, such as a textile, etc.; next, spreading a layer of reflective particles on the printed pattern of the substrate to make the reflective particles adhered to the substrate by the adhesive, which the reflective particles can be spread on the substrate by hopper spraying or screen printing manner; follow by roll pressing the substrate by hot pressing manner so that the reflective particles on the substrate can be embedded and fixed in the substrate, thereby completing the manufacturing process for reflective printed pattern. Since the entire manufacturing process of this invention is simpler than the conventional technology, the entire production efficiency and output can be increased, and the entire production cost can be greatly reduced.
Patent TW-429498-B (TW)
Title: Method for nondestructive measurement for minority carrier diffusion length and minority carrier lifetime in semiconductor devices
Inventor: BAUMGART HELMUT
IPC: G01R31/26
Filed: 1999-03-18
Granted: 2001-04-11
Abstract: A method is provided for nondestructive measurement of minority carrier diffusion (Lp) length and accordingly minority carrier lifetime (Op) in a semiconductor device. The method includes the steps of: reverse biasing a semiconductor device under test, scanning a focused beam of radiant energy along a length of the semiconductor device, detecting current induced in the DUT by the beam as it passes point-by-point along a length of the DUT, detecting current induced in the semiconductor device by the beam as it passes point-by-point along the scanned length of the semiconductor device to generate a signal waveform (Isignal), and determining from the Isignal waveform minority carrier diffusion length (Lp) and/or minoriyt carrier lifetime (Op) in the semiconductor device.