Patent SG-11201908432T-A (SG)
Title: New formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
Inventor: LEI XINJIAN
IPC: C23C16/40
Filed: 2018-03-14
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIPO I PCT IiiimmolionsonolomolomollumonnovoimIE (10) International Publication Number WO 2018/170125 Al (51) International Patent Classification: C23C 16/40 (2006.01) C23C 16/56 (2006.01) C23C 16/455 (2006.01) (21) International Application Number: PCT/US2018/022430 (22) International Filing Date: 14 March 2018 (14.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/471,619 15 March 2017 (15.03.2017) US 62/477,804 28 March 2017 (28.03.2017) US 15/914,962 07 March 2018 (07.03.2018) US (71) Applicant: VERSUM MATERIALS US, LLC [US/US]; 8555 South River Parkway, Tempe, AZ 85284 (US). (72) Inventors: LEI, Xinjian; 8555 South River Parkway, Tempe, AZ 85284 (US). MACDONALD, Matthew, R.; 8555 South River Parkway, Tempe, AZ 85284 (US). KIM, Moo-Sung; 8555 South River Parkway, Tempe, AZ 85284 (US). LEE, Se-won; 8555 South River Parkway, Tempe, AZ 85284 (US). = (74) Agent: NEAGLE, Damon, A.; Design IP, P.C., 5050 W. Tilghman Street, Suite 435, Allentown, PA 18104 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) Published: — with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) 1-1 kr) 1-1 O N 1-1 00 1-1 O C (54) Title: NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS Homogeneous Si-doping Si + HF is introduced in every cycle x cycles SI:Hf0 2 Substrate —4. Figure 2 (57) : In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hy- droxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol%, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations. Amorphous Si:Hf0 2 Thermal anneal Crystalline SiHf0 2 4-- Substrate