baber/WOPTO huggingface dataset:
Patent JP-S5641321-A (JP)
Title: Cooling method for hoop in continuous furnace
Inventor: FUKUOKA YOSHIKAZU
IPC: C21D9/573
Filed: 1979-09-14
Abstract: PURPOSE:To rationalize the temp. distribution in lateral direction of a hoop so as to cool the hoop continuously and rationally, by allowing the hoop to contact with cooled metallic rotators, and by cooling the hoop with spray of a coolant. CONSTITUTION:Hoop 2 in a continuously furnace is passed between cooled metallic rotators 1, hereby is it cooled to a prescribed temp. At the same time, the hoop is cooled by spraying a coolant such as N2 gas, etc. from slits of gas-spraying nozzles 3, equipped near the metallic rotators 1, in parallel to the axial direction of the metallic rotators. This cooling method makes the temp. distribution in the lateral direction of the hoop 2 uniform. Gas-spraying nozzles 3 are either slided suitably in the lateral direction of the hoop 2, or divided into plural nozzles, and the cooling is controlled by regulating the pressure and the flow rate of the gas.
Patent JP-S61274233-A (JP)
Title: Temperature detector
Inventor: TACHIBANA KANICHI
IPC: G01K7/00
Filed: 1985-05-30
Abstract: PURPOSE:To enable very accurate detection of temperature in a short time, by providing a means for adjusting the temperature near a sensor to the tempera ture slightly lower than the sensor in addition to the sensor for detecting the temperature of an object to be measured. CONSTITUTION:A heater or the like is provided near a first sensor 8 while a second sensor 11 is provided to detect the temperature of the heat source or right near thereof and the light source is electrically energized to adjust the temperature about the first sensor to the temperature slightly lower than the temperature than that detected with the first sensor. With such an arrange ment, very limited value of required heat transmission is enough to reach the balance between the set part of the first sensor 8 and the temperature of an object to be measured such as human body while the drop in the temperature of the object being measured such as human body is very limited because of small amount of heat transmission. Thus, the first sensor 8 reaches the balanced temperature with the object being measured in a short time thereby enabling accurate detection of temperature.
Patent JP-H11330006-A (JP)
Title: Ultrathin single phase barrier layer for conductor and its manufacturing method
Inventor: COHEN STEPHEN A
IPC: H01L21/3205
Filed: 1999-04-26
Abstract: PROBLEM TO BE SOLVED: To obtain a new barrier layer which fulfills all standards by forming an alpha phase tungsten barrier layer in a trench or a via, having a mutual bonding structure by using a chemical low temperature/low pressure air phase adhesion technology. SOLUTION: A dielectric 22 is formed on a semiconductor substrate 20 and a trench or a via having a mutual bonding structure is formed on the surface of the dielectric 22. An alpha phase tungsten barrier layer 24 is formed in the trench or the via through the use of chemical low temperature/low pressure air phase adhesion technology method and an arbitrarily selected metallic seed layer 26 is laminated and formed thereon. Additionally conductive material 28 is embedcred in the trench or the via and an alpha phase tungsten barrier layer 25, a dielectric 30 and an electrode 32 are successively formed thereon. In this case a barrier layer 36, made of such materials as alpha tungsten and so on which protects a contact of the conductor 28 with the dielectric 22, is formed.
Patent JP-H09307455-A (JP)
Title: Header detection device
Inventor: IMANISHI HIROSHI
IPC: G06F7/04
Filed: 1996-05-13
Abstract: PROBLEM TO BE SOLVED: To decrease the number of logical gates constructing a circuit and to reduce a layout area by using the comparators which detect the specific patterns and using no conventional priority encoder. SOLUTION: This header detector previously stores the bit stream to be processed in a memory 101 in bite alignment and therefore has not always to use a priority encoder to calculate the number of continuous zeros. Instead, the detector uses the comparators 103 and 104 which can detect the specific patterns to detect a header. Thus, an overall circuit scale of the header detector can be reduced and a layout of a smaller area is attained even when the fast bit processing capability is required to the detector and the number of bits to be processed at a time is increased.
Patent JP-S60261889-A (JP)
Inventor: TSUKADA MOTOHARU
IPC: E21B25/00
Filed: 1984-06-08
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H07303006-A (JP)
Title: Ferrite bar antenna and its tuning frequency adjusting method
Inventor: TAKEDA TERU
IPC: H01Q7/08
Filed: 1994-05-07
Abstract: PURPOSE:To attain high sensitivity and high Q and to easily vary a tuning frequency by using the center part of a ferrite magnetic core with high effective permeability for a coil and connecting a variable coil in series to allow inductance to be variable. CONSTITUTION:The coil 11 is formed on a bar shape ferrite magnetic core 10, however, the coil 11 is formed on a part including the center part of the ferrite magnetic core 10, not on the terminal part of the ferrite magnetic core 10. As a winding method, a single layer solenoid winding is employed. Also, the inductance 12 is connected in series with the coil 11. An LC parallel resonance circuit can be comprised by connecting a capacitor 13 in parallel with the inductance 12, and tuning with a frequency decided by the inductance 12 and the capacitor 13 can be attained. The inductance 12 and the capacitor 13 are constituted of the variable coil incorporating the capacitor shown in broken line 15, and the inductance can be adjusted by moving the core of the coil, then, a tuning frequency can be adjusted.
Patent JP-S60260968-A (JP)
Title: Developing device
Inventor: MURAYAMA YASUSHI
IPC: G03G15/08
Filed: 1984-06-08
Abstract: PURPOSE:To easily make developing agent resupplying operations which are always required when a developing device is used, by providing a means which detects a developer at a location where part of or all of developers are exchanged and moving a desired specific developer to the exchanging location. CONSTITUTION:In a developing device 4 which develops a photosensitive drum 1, developers 4Y, 4M, 4C, and 4BK of each color are held by a supporting body 4a under a removable condition and the device 4 is rotated by means of a central shaft 4b. Notched openings for taking out developers are provided in the side plate of a copying machine main body and the openings are closed by the doors of the developers. When, for example, the developer 4Y is positioned to the exchanging location of developers, a detecting plate 9 fixed to the central shaft 4b judges that the developer 4Y is at the exchanging location by reflecting light from a photointerruptor 20Y. On the other hand, when it is judged that one of the developers other than desired one is at the exchanging location, a motor M for driving the device 4 is rotationally driven from a control section and the desired developer is moved to the exchanging location. Therefore, the developing agent resupplying operation which is always required when a developing device is used can be made easily.
Patent JP-2000307113-A (JP)
Title: Semiconductor device, its manufacture, and semiconductor integrated circuit
Inventor: NAGAHISA KATSUMI
IPC: H01L27/088
Filed: 1999-04-26
Abstract: PROBLEM TO BE SOLVED: To provide a higher driving capacity than with a single LDD structure by improving hot carrier resistance compared to a concentional MOSFET of single LDD layer and double LDD layer structure. SOLUTION: The arsenic of dose amount 3E13 cm-2 I is ion-implanted into a semiconductor substrate 2 with the energy of 100 keV through a thin insulating film 12 formed on an active region 13 around a gate insulating film 11 with a tilt angle between an ion-implantation direction and a normal direction NL as an angle of 45 deg. which can cause a channeling phenomenon to the surface (100) of semiconductor substrate 2. Then, the phosphorus of dose amount 1E13 cm-2 is ion-implanted into the semiconductor substrate 2 with the energy of 50 keV at an angle which does not cause a channeling phenomenon. Then, after a side wall 6 is formed, the arsenic of dose amount 4E15 cm-2 is ion- implanted into the semiconductor substrate 2 with the energy 50 keV at an angle which does not cause a channeling phenomenon to form n+ layers 3 and 4.
Patent JP-S62273564-A (JP)
Title: Electrophotographic sensitive body
Inventor: FUKUDA YUZURU
IPC: G03G5/043
Filed: 1986-05-22
Abstract: PURPOSE:To obtain the titled body having a very small dark attenuation of the electrostatic charge potential by constituting a photoconductive layer from an i-type semiconductor comprising an amorphous silicon contg. hydrogen atom as a main component, and by constituting a surface layer from a dried curing material of a solution contg. at least one kind of an org. aluminium compd. CONSTITUTION:The photoconductive layer composed of the amorphous silicon is coated on a conductive substrate, and the surface layer is laminated on the photoconductive layer. The dried curing material of the solution contg. at least one kind of the org. aluminium compd. is used as the surface layer. The i-type semiconductor contg. the amorphous silicon as the main component, is used as the photoconductive layer. The further preferable org. aluminium compd. is an aluminium complex and aluminium alkoxide. The preferable org. aluminium compd. is exemplified by aluminium trisacetyl acetonate, aluminium methoxide and aluminium-n-butoxide, etc. Thus, the high mechanical strength, the high durability, the high heat-resisting property and the high photosensitivity of the titled body are maintained, and the high electric charge holding power of the titled body is obtd., without being affected by the surroundings of an outside and the number of using, thereby obtaining the picture image having excellent quality.
Patent JP-S5451770-A (JP)
Title: Pulse emission measurement device
Inventor: UCHIYAMA TADAYOSHI
IPC: G01R31/24
Filed: 1977-10-03
Abstract: PURPOSE: To reduce extremely the gas discharge amount and thus to avoide the ill effect due to the gas, by using the first grid potential of CRT as the reference potential and applying the cathode pulse voltage whose low level features the negative value and the high level features the positive value against the reference potential.  
     CONSTITUTION: The follwing component elements are provided: first voltage source EC to supply the reference potential to control electrode G 1  of CRT; switching element S to switch the pulse signal; current detecting element i k  which is connected to element S and detects the emission current; and second voltage source EK to supply the necessary voltage to the CRT cathode via element i k . Then the control electrode of CRT is used as the reference potential, and the negative value of the pulse voltage against the reference potential is applied to the cathode at the low level time and the negative value at the high level time respectively. As a result, the gas discharge amount can be reduced extremely to avoid the ill effect of the gas 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-2000305501-A (JP)
Title: Landing correction device
Inventor: UBUKAWA TOKIO
IPC: G09G1/04
Filed: 1999-04-26
Abstract: PROBLEM TO BE SOLVED: To enable an optimum landing correction at four corners and both side ends of the screen of a CRT by individually controlling a current to be supplied to each correction coil based on detection outputs from a geomagnetism sensor and a temperature sensor. SOLUTION: Correction coils 1-8 are respectively arranged at four corners and both side ends of the rear surface of a CRT. A geomagnetism sensor 9 and an ambient temperature sensor 10 are provided, and detection outputs from both the sensors 9, 10 are digitalized at A/D converters 11, 12 and taken in a CPU 13. The CPU 13 performs arithmetical operation based on these outputs, and determines a control current of each of current control circuits 20-25 according to the result of arithmetical operation, and the data is given to the circuits 20-25 via D/A converters 14-19. Accordingly, the circuits 20-25 individually control a current to be supplied to each of the coils 1-8 based on the data from the CPU 13.
Patent JP-S5642115-A (JP)
Title: Measuring method for diameter of beam
Inventor: ARAI SHIGERU
IPC: G01J1/42
Filed: 1979-09-17
Abstract: PURPOSE:To measure the diameter of a light beam easily and precisely by a method wherein plural pits smaller in diameter than the beam to be measured are recorded at regular intervals on a rotary disc, and the variations in the quantity of reflected light or transmitted light are detected when the beam is projected. CONSTITUTION:The holes or pits having phasic structure are writen by using a light source 11, a modulator 12, an optical system 13a, a reflector 14, an optical system 13b and an optical disc 15, so that the hole or pits having phasic structure are aligned concentrically along a track 16. The beam 1 to be measured is projected onto the track 16 through a lens 17, a half-mirror 18 and a lens 2. The reflected light 19 is detected by a light detector 20 through the half-mirror 18, and the detection output is amplified by an amplifier 21 and displayed on an oscilloscope 22. The diameter of the light beam can be measured from the pulse width of the display output.
Patent JP-H09306312-A (JP)
Title: Pressure switch
Inventor: ITO KATSUTOSHI
IPC: H01H9/16
Filed: 1996-05-13
Abstract: PROBLEM TO BE SOLVED: To instantly and easily discriminate the magnitude relationship between preset pressure and detecting pressure by a single pressure switch. SOLUTION: A pressure switch to display its discriminated result by discriminating the magnitude of preset pressure and detecting pressure, is premised. A green LED 28 which is lighted when the detecting pressure is larger than the preset pressure and is put out when the detecting pressure is smaller than the preset pressure and a red LED 29 which is put out when the detecting pressure is larger than the preset pressure and is lighted in a display color, that is, a red color different from the blue LED 28 when the detecting pressure is smaller than the preset pressure, are arranged in the pressure switch. As a result, the magnitude relationship between the preset pressure and the detecting pressure can be instantly and easily discriminated only by confirming a display color of both LEDs 28 and 29.
Patent JP-S609527-A (JP)
Title: Compound die for washer
Inventor: KAWAKAMI MICHIHISA
IPC: B21D28/34
Filed: 1983-06-29
Abstract: PURPOSE:To manufacture continuously a washer excellent in dimensional accuracy by punching outer and inner diameters almost simultaneously without a knockout in the inside of an outer-diameter punching die-plate provided to a middle die. CONSTITUTION:A blanking material 9 is inserted in a groove 31b of an outer- diameter stripper 31 of a middle die 30, and an upper die 25 is lowered by lowering an upper die-set 28, to press an inner-diameter stripper 33 of the die 30 by an adjustable block 29. The inner and outer diameters of the material 9 are punched almost simultaneously in the inside of a through hole 32a of an outer- diameter die plate 32 by an outer-diameter punch 22 and an inner-diameter punch 26, to form a product washer. Further, the washer is pushed up to a groove 32b of the plate 32 by the punch 22. At that time, a small discoidal material of the washer falls in a through hole of the punch 22 and is discharged from a through hole of a lower die set 24. Next, when the upper die set 28 and the upper die 25 are gradually raised, the inner punch 26 is drawn out of the stripper 33, and the washer in the groove 32b is made free and carried out pneumatically by a high speed air in a pneumatic conveying pipe 34.
Patent JP-H02296340-A (JP)
Title: Manufacture of semiconductor device
Inventor: OBAYASHI YOSHIKAZU
IPC: H01L29/78
Filed: 1989-05-11
Abstract: PURPOSE:To omit side wall forming process, and prevent the decrease of performance and reliability caused by the irregularity of side wall width, by consisting a structure having a gentle impurity concentration distribution on the substrate side wall linking from the lower part of a gate to a source/drain. CONSTITUTION:The surface of a substrate 11 is dug up to a specified depth so as to leave a gate insulating film 12 and a gate electrode 13 at a gate part: the side wall part 15 of a substrate is formed at the lower part of the gate insulating film 12; on the substrate surface part dug so as to link with said side wall part, a high concentration impurity diffusion layer 19 is formed in a source/drain part; a low concentration impurity diffusion layer 18 is formed, thereby constituting an LLD type structure imparted with a gentle impurity concentration distribution. As a result, the expected electric field relaxation can be realized similarly to the case of side wall. Thereby the remarkable simplification of manufacturing process is facilitated, the manufacturing cost can be reduced, and the stable performance and the reliability of a device are suitably and effectively improved.
Patent JP-H06311030-A (JP)
Title: Pll circuit
Inventor: HONMA KANENORI
IPC: H03L7/14
Filed: 1993-04-21
Abstract: PURPOSE:To prevent deteriorated stability due to much more jitter in a VCO output when lots of '0s' are in existence in an data input in the PLL circuit (in the case of a small mark rate) and to increase '0' consecutive strength against the data input. CONSTITUTION:A '0' detection circuit 6 detects '0s' of a data input 1 to generate a '0' detection signal. An output voltage of an LPF 4 for a just preceding period is sampled by a sample-and-hold circuit 7 for a presence period of the '0' detection signal to obtain a control input of the VCO 5. When the data input is other than '0' (for '1'), the sample-and-hold circuit 7 is not operated and an LPF output is used for the VCO control input as it is.
Patent JP-S5866266-A (JP)
Title: Substrate for lead-acid storage battery electrode plate
Inventor: ONO SUKEYASU
IPC: H01M4/82
Filed: 1981-07-28
Abstract: PURPOSE:To obtain a substrate for a lead-acid sotrage battery electrode plate having good high rate discharge performance and especially good voltage performance at low temperature, long duration, good adherence of an active mass with a substrate for an electrode plate, and a long life by using a porous lead alloy for the substrate for the electrode plate and increasing density of metal by decreasing the pore size in proportion to positioning upward the substrate. CONSTITUTION:Pb-Ca type porous alloy sheet 1 having 1mm. thicker central portion that both side portions is pressed with press rollers 2, 3 to make a flat sheet 4. The central portion of the sheet 4 is impregnated with Pb-Sb type alloy metl in a impregnation apparatus 5. Then a sheet 11 having a solidified central portion 11a is drawn out from a drawing hole 10 under the impregnation apparatus 5. The solidified central portion is punched in order to form  lug 12 and an upper frame 13, and the other portion except the lug 12 is punched in a circle to form a hole 14. A paste is filled in this substrate 15 for an electrode plate to make an electrode plate.
Patent JP-H05122946-A (JP)
Title: Voltage-fed inverter
Inventor: MASUDA HIROYUKI
IPC: H02M7/48
Filed: 1991-04-22
Abstract: PURPOSE:To suppress a transient voltage at the time of GTO-OFF of a voltage- type GTO inverter and to recover snubber energy. CONSTITUTION:Snubber diodes 31a, 31b are connected in the same polarity manner with the anode side of GTO21a in a positive side arm and with the cathode side of GTO21b in a negative side arm, a capacitor 8 is connected between the snubber diodes 31a, 31b of the positive and negative arms via diodes 6a, 6b connected in the same polarity manner as the snubber diodes, and resistances 7a, 7b with the capacitor 8 and power supply 1 are provided further. Thus, a transient voltage at the time of GTO-OFF is suppressed and a part of snubber energy returns to a load so that the efficiency of an apparatus is improved.
Patent JP-S5741917-A (JP)
Title: Curing and hardening of lining layer at pipe lining process
Inventor: UGA TERUO
IPC: F16L55/10
Filed: 1980-08-26
Abstract: PURPOSE: To shorten the time required for curing and hardening of the lining layer by lining the soft and elastic tube on the lining layer inside the pipe by utilizing the pressurized fluid, and heating and pressing of the lining layer by passing the heated fluid.  
     CONSTITUTION: The lining layer 1 is formed by applying reactive thermosetting resin type lining material inside the pipe and the open end of the tube 2 is connected to the open end of the pipe a and the tube 2b is expanded and contacted to the inside face of the pipe a by supplying the heated fluid from the inlet 4b and after lining is finished, the lining layer 1 is heated and made to cure and harden by using steam as the pressurized fluid. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H0595326-A (JP)
Title: Job data communication system
Inventor: TAKI TOYOHISA
IPC: H04B7/26
Filed: 1991-05-23
Abstract: PURPOSE:To provide the job data communication system in which a communication time relating to a report of a job progress state from an on-vehicle terminal equipment to a center host computer is short and the operation for the communication is simple. CONSTITUTION:Data bases 13, 44 of job data representing a job progress of a job relating to an operational vehicle 40 are not only provided to a center 1 and but also provided to the operational vehicle 40. The service personnel revises the content of the job data based on the content extracted from the local database 44 by an on-vehicle terminal equipment 41 and displayed on a display device 53. Furthermore, the job data revised as independent processing of the revision processing are sent to a host computer 11 of the center 1.
Patent JP-H0414829-A (JP)
Title: Manufacture of semiconductor device
Inventor: KIKUCHI YOSHIBUMI
IPC: H01L21/76
Filed: 1990-05-08
Abstract: PURPOSE:To obtain a method which does not produce a residue of polycrystalline silicon or the like in the insulation and isolation operation by using a trench by a method wherein the surface of a second poly-Si film inside a groove is oxidized, the second poly-Si film is formed, an Si3N4 film is etched and removed wholly and the whole surface of a semiconductor substrate is covered with a third poly-Si film. CONSTITUTION:By using a mixed gas of trifluorosilane with hydrogen, a second poly-Si film 7 is grown selectively by a CVD method by using a first poly-Si film 6 as a nucleus; a groove 4 is filled completely with the second poly-Si film 7. Then, the second poly-Si film 7 which has been overflowed to the outside from the groove 4 is polished and removed or etched and removed by a polishing operation or an anisotropic etching operation; the surface of an Si substrate 1 is flattened. Then, the surface of the second poly-Si film 7 is oxidized by a thermal oxidation operation. A second SiO2 film 8 is formed; its surface can be formed in a position which is higher than the surface of a field SiO2 2. Consequently, no hollow is produced at the edge of the groove 4.