baber/WOPTO huggingface dataset:
Patent KR-20000060836-A (KR)
Title: Casing for preventing robbery
Inventor: HONG KYOUNG BOOG
IPC: G11B33/04
Filed: 1999-03-19
Abstract: PURPOSE: A casing for preventing robbery is provided for preventing a robbery of a compact recording medium casing. CONSTITUTION: An escape prevention plate(105) is formed at a corner portion of the other side of a cassette(101) so that a compact recording medium casing is not escaped from a storing hole(103). A door(104) connected by a hinge(110) at one side of an arranged cassette(109) is formed in an opening(102) through which the compact recording medium casing is inserted. The door(104) opens the entire portions of the opening(102) or closes the same. A stopper(106) is formed opposite the hinge(110) of the door(104). A through hole(107) is formed at the lower portion of the stopper(106) for preventing an upward and downward movement of the door.
Patent KR-19990087958-A (KR)
IPC: F42D5/045
Filed: 1999-04-23
Abstract: The explosion front (8) is guided towards a flame trap (5) with a diameter greater than the pipe (4) and this front only comes into contact with a partial region (9) of the flame trap, which directs the front into an expansion region (13) in front of the flame trap. The resulting deflagration impinges against the outer cross-section region of the flame trap. An Independent claim is also included for the flame trap.
Patent KR-20000072846-A (KR)
Inventor: KIM SANG U
IPC: G02B27/22
Filed: 1999-05-01
Abstract: PURPOSE: A frame for fixing a half mirror of a three-dimensional monitor is provided to correct the error of a half mirror easily and to prevent the vibration of the half mirror by fixing the half mirror firmly. CONSTITUTION: A frame for fixing a half mirror of a three-dimensional monitor is composed of a couple of upper frames(21) and a couple of lower frames(22) and a couple of upper frames(21) include a half mirror(17), a case(11), a pressure portion(26), the first curve portion(30), the first long hole(23) and the first control screw(24). The half mirror(17) is installed in the case(11) of the box type. The irregular portion is installed on incline plane of the lower side. The pressure portion(26) presses the upper plane of the half mirror(17) flexibly. The first curve portion(30) supports the lower plane of the half mirror(17). The first long hole(23) is installed on the end of the lower part and the first control screw(24) is installed on the lower part of the case(11) through the first long hole(23).
Patent KR-19990088090-A (KR)
Title: 농약조성물
IPC: A01N43/08
Filed: 1999-05-06
Abstract: 본 발명은 적어도 1종의 농약성분, 융점이 60℃이상이지만 상기 농약성분의 융점보다는 낮고, 산가가 10 내지 50mg KOH/g인 에스테르족의 소수성 물질 및 무기희석제보유체를 구비한 것을 특징으로 하는 저속방출형 농약을 제공하는 데 있다.
Patent KR-19990064923-A (KR)
Title: 수제비의 제조 방법
IPC: A23L7/109
Filed: 1999-05-21
Abstract: 본 발명은 라면 또는 컵라면 등과 같이 건조시켜 장기 보관 유통이 가능하면서 쉽게 조리해 먹을 수 있는 인스턴트 수제비의 제조방법에 관한 것으로, 특히 자동화 생산이 용이하면서 완전히 익힌 상태로 제품화함으로써 끓여서 먹거나 뜨거운 물을 부어서 먹을 수 있는 수제비의 제조방법에 관한 것이다. 
     상기 목적을 달성하기 위해 본 발명은 밀가루를 주성분으로 한 원료를 30℃∼80℃ 미만의 온도를 갖는 물로 반죽하여 노즐로써 0.2mm∼0.5mm의 두께로 사출하는 단계와, 
     상기 사출물을 로터리 칼날에 의해 1.5cm∼5cm 미만의 길이로 절단하는 단계와, 
     이를 스팀장치를 통과하는 이송 컨베이어로 1분 내지 9분 동안 이동하면서 100℃∼140℃의 스팀으로 익히는 단계와, 
     상기 스팀장치를 통과하여 컨베이어로 계속 1분 내지 9분 동안 이동되면서 자연 건조시키는 단계와, 
     이를 콘테이너에 넣어 0℃∼10℃ 사이의 온도로 약 2∼3시간 정도 저온보관하는 단계와 
     이를 분리하여 자연 송풍 또는 열풍(50℃∼80℃) 건조에 의해 대량 건조하는 단계를 포함하는 수제비의 제조방법이다.
Patent KR-20010001759-A (KR)
Inventor: MACHUKI NOBUO
IPC: H01L21/31
Filed: 1999-06-08
Abstract: PURPOSE: A silicon polymer insulating layer of a semiconductor substrate and a method for forming the same are provided to form silicon polymer layer with a low relative dielectric constant without using a high-priced system. CONSTITUTION: A semiconductor substrate(4) is loaded within a reaction room(6) of a plasma CVD(Chemical Vapor Deposition) system(1). A material gas having two or less alkoxy groups or a material gas without the alkoxy group is provided into the reaction room(6). A silicon polymer layer with a low relative dielectric constant is formed on the semiconductor substrate(4) by activating a plasma polymerization reaction within the reaction room(6). A flow rate of a reaction gas including the material gas is controlled to extend the remaining time of the material gas.
Patent KR-20010001922-A (KR)
Inventor: HAN GYEONG SU
IPC: B23B5/00
Filed: 1999-06-09
Abstract: PURPOSE: A vertical multiple-head lathe with moving main spindle for working opposite sides of workpiece is provided to shorten the time required in changing a workpiece by constituting the lathe in such a manner that a main spindle directly changes the workpiece after rotating a first and second main spindles to face each other upon changing of positions of the opposite sides of the workpiece in sequentially working the opposite sides of the workpiece through a single lathe. Also, the vertical multiple-head lathe is provided to prevent a breakdown possibly caused by chips generated upon working by constituting the lathe in such a manner that changing of the workpiece is performed at the outside of a working area and to allow a main spindle to receive a workpiece directly from a conveyor and to put it on the conveyor upon supplying or discharging of the workpiece. CONSTITUTION: A vertical multiple-head lathe with moving main spindle for working opposite sides of workpiece comprises a frame(1) of which rear side central portion is provided with a horizontal bed(11); a first and second spindle stocks(2, 3) mounted on the bed(11), which move along a X-axis with a workpiece held thereto, respectively, and rotate by 90deg. in a direction opposing each other; a first and second tool rests(4, 5) provided with turrets(43, 53) rotating frontwardly by 90deg. and arranged on a lateral lower side of the first and second spindle stocks(2, 3); a tool changing device(9) mounted on the front opposite sides of the frame(1) to supply a tool to the turrets(43) and provided with various kind of tools; and a supply and discharge conveyers(6, 7) for supplying and discharging a workpiece, which are arranged on a center portion of the opposite sides of the frame(1).
Patent KR-19990083705-A (KR)
Title: 음표형판
Filed: 1999-06-04
Abstract: (1) 프라스틱을 재질로 하는 것이며 금형을 이용하여 사출하는 분야이다. 
     (2) 음표를 틀의 원리를 이용하여 표준화 시키고 대량이나 반복 및 훈련시의 사용에 있어 효율적으로 사용하기 위함이며 일일이 연필이나 펜으로 그려 넣어야 하는 것들에 있어서 형을 이용하여 표준적이고 대량적으로 이용함에 따라 편리함과 아름다움을 위함이다. 
     (3) 음악의 작곡에 필요한 모든 음표나 부호들을 프라스틱 본체에다 틀(형)을 관통되게 만들어 그 외곽선을 이용하여 그려 표준적이고 능률적이며 아름답게 이용할 수가 있게끔 하는 것이다. 사면에는 전체 틀의 구조에서 일반자의 표시를 넣어 일석이조의 효과를 얻을 수 있도록 하고 표면상부(한쪽) 음표외형선에는 모따리를 해주어 연필의 삽입과 제거가 쉽게 하며 선이 바르게 끄어질 수 있도록 하는 것이다. 또한 각 도형에 모양의 틀을 만들어 도형들을 이용할 수도 있게끔 하는 것이다. 
     (4) 어린이나 청소년까지 그리고 음악을 필요로 하는 작곡가까지 다양하게 실용적이고 표준적으로 실용할 수가 있다. 특히 대량 생산이 가능할수가 있어 최대한 저렴가에 공급이 가능하다.
Patent KR-20010004532-A (KR)
Inventor: HONG SEONG TAEK
IPC: H01L27/04
Filed: 1999-06-29
Abstract: PURPOSE: An electrostatic discharge protection circuit of a semiconductor device and a making method thereof are provided to prevent a breakdown of a gate oxide due to electrostatic discharge and thereby to improve a protective property against electrostatic discharge. CONSTITUTION: An electrostatic discharge protection circuit is characterized by a resistor formed between gates of both a periphery circuit unit and an output-driving unit. In addition, the resistor is formed as a metal contact chain or a barrier metal glue layer, a resistance of which is greater than that of a substrate. A field oxide(102) is formed on a p-well(101) in the substrate, defining an active area therebetween. Next, a heavily doped n-impurity region(106) is formed in the active area, and an interpoly oxide(103) is formed thereon. A contact hole(107) is then formed in the interpoly oxide(103) to expose the n-impurity region(106). Thereafter, a barrier metal(104) and a metal electrode(105), both constituting the resistor, are connected to the exposed n-impurity region(106) through the contact hole(107).
Patent KR-20010005116-A (KR)
Inventor: YOO SEUNG JONG
IPC: H01L21/336
Filed: 1999-06-30
Abstract: PURPOSE: A semiconductor device manufacturing method is provided to be capable of reducing the thickness of an insulating film on a gate electrode, by forming a bit line contact plug by a simpler method than the formation method using chemical mechanical polishing method. CONSTITUTION: A semiconductor device manufacturing method includes forming a pad nitride film(17) having a bit line contact hole, through which a portion in which a bit line contact will be formed is exposed, and the first interlayer insulating film(19) on a semiconductor substrate(11). A conductive layer is formed on the entire surface. The conductive layer goes to blanket etch process to form a bit line contact plug filling the bit line contact hole. An etch prevention film exposing the bit line contact plug is formed on the entire structure. A bit line connected to the bit line contact plug is formed. The second interlayer insulating film(27) is formed on the entire structure. A storage electrode contact hole is formed by etch process using the storage electrode contact mask as an etch mask. A storage electrode contact(29) filling the storage electrode contact hole is formed.
Patent KR-20010008559-A (KR)
Inventor: KIM HAK MUK
IPC: H01L21/3205
Filed: 1999-07-02
Abstract: PURPOSE: A tungsten polycide layer formation method is provided to be capable of precluding a water mark generated at the interface between a polysilicon layer and a tungsten silicide layer. CONSTITUTION: A tungsten polycide layer formation method includes forming word lines and bit lines by which a tungsten silicide layer(4) are discontinuously stacked on a polysilicon layer(3). A polysilicon layer(3) is deposited on an underlying layer using a mixture gas of SiH4 gas and PH3/SiH4 gas. After the wafer is cleaned using a common chemical cleaner, a source gas supplied is activated using RF plasma and then reacts with a native oxide film on the wafer, so that the source gas is removed. Then, a tungsten silicide layer(4) is stacked on the polysilicon layer.
Patent KR-20010009003-A (KR)
Inventor: KIM UNG BIN
IPC: H04B1/40
Filed: 1999-07-06
Abstract: PURPOSE: A method for reducing power consumption in a DTRS(Digital Trunked Radio System) terminal is provided to convert a transceiving terminal of a terminal into a sleep mode from a normal mode when a PTT(Push-To-Talk) key is turned off in a command call or an END key is pressed in a telephone call, so as to reduce the power consumption of the terminal. CONSTITUTION: A DTRS terminal decides whether a command call reception is completed, or whether an END key is pressed in a telephone call(S401), If so, the DTRS terminal disables an enable signal of a regulator(S401), and converts an A/D converter into a sleep mode(S402). The DTRS terminal disables a receiving path and an A/D receiving path clock(S403), and sets off an enable signal of a module generating a local frequency of a demodulator(S405). The DRTS terminal disables a signal related to an attenuator in low(S405), and disables a clock of an ASIC(Application Specific Integrated Circuit) and a port enable signal related to a receiving terminal to set a frequency synthesizer in low, then the receiving terminal is converted into the sleep mode(S406).
Patent KR-20010010391-A (KR)
Inventor: CHOI EUN CHANG
IPC: H02M3/07
Filed: 1999-07-20
Abstract: PURPOSE: A charging pump operated in high speed is provided to solve a contradictory problem of operation velocity and leakage current generated from a charging pump circuit by installing an anti-leakage circuit and a feedback circuit. CONSTITUTION: Simple structured anti-leakage circuits(232,233) are installed between a high charging pump circuit(200) and a differential loop filter(220). A leakage current take place in a differential mode due to current variations of a current driving source as output voltage variations of the differential loop filter(220) varies. A feedback circuit is installed to prevent the leakage current. The differential loop filter(220) and the charging pump circuit are connected during charging or pumping, and separated during hold. So, the leakage current does not take place even if operated in high speed. The charging and pumping of the differential loop filter(220) are controlled by up/down signals. The differential leakage current can be completely interrupted in the hold mode.
Patent KR-20000011998-A (KR)
Inventor: SEKIME TOMOAKI
IPC: G02F1/1362
Filed: 1999-07-27
Abstract: PURPOSE: A liquid crystal display device is provided to obtain a good display characteristic preventing an open-circuit of a pixel electrode. CONSTITUTION: The liquid crystal display device comprises: a transparent substrate(110); a nonlinear element(111) formed on the transparent substrate(110) and having a plurality of electrodes; a protective film(103) provided on the nonlinear element; an interlayer insulation film(102) provided on the protective film(103); and a pixel electrode(101) provided on the interlayer insulation film(102), wherein an opening part(104) having a sectional shape of a 'V' slope is formed to the protective film and the interlayer insulation film. The opening part(104) is exposed at a surface of a first electrode(105) among the plurality of electrodes, and has a first end part(104c) formed to the protective film and a second end part(104d) formed to the interlayer insulation film. The first end part is disposed outside more than the second end part, and the pixel electrode is provided to a surface of the opening part. The first electrode of the nonlinear element is contacted with the pixel electrode.
Patent KR-20010019154-A (KR)
Inventor: LEE BONG JAE
IPC: H01L29/78
Filed: 1999-08-25
Abstract: PURPOSE: A method for fabricating a MOS transistor having an improved lightly doped drain(LDD) structure is provided. CONSTITUTION: A lightly doped n-type region(120A,120B) and a heavily doped n-type region(126A,126B) are sequentially formed in a p-type semiconductor substrate(112). The first insulating layer(130A,130B) is then formed thereon and patterned to define a gate region. Thereafter, a trench is formed in the substrate(112) by an isotropic etching process using the patterned insulating layer(130A,130B) as a mask. A spacer(145) of the second insulating layer is then formed on a sidewall of the trench, and a gate oxide layer(144) is formed on a bottom of the trench. Next, a conductive layer is formed on the entire surfaces and polished to expose the first insulating layer(130A,130B) and thus to form a gate layer(148a) in the trench. Since there is no overlap between the lightly doped n-type region(120A,120B) and the gate layer(148a), a capacitance reducing a switching speed is not produced. Furthermore, the generation of a hot carrier is controlled.
Patent KR-20010019656-A (KR)
Inventor: CHOI JIN MIN
IPC: F24H9/20
Filed: 1999-08-30
Abstract: PURPOSE: A damper drive operates a damper motor depending on power supplied to a ventilator and a burner so as to project small amount of air when a boiler is ignited and increase the amount of air inhaled once an ignition completes by driving a damper. CONSTITUTION: A damper drive comprises an electric current control unit(10), a rectifying unit(20), a combustion sensing unit(30) a load control unit(40), a damper position fixing unit(50), a damper position sensing unit(60) and a damper motor driving unit(70). The electric current control unit(10) prevents the inflow of excess current as a ventilator(2) works. The combustion sensing unit(30) removes frequency component and senses the combustion condition. The load control unit(40) is connected to the output end of the combustion sensing unit(30) and maintains a certain load. The damper position fixing unit(50) comprises magnet inputting electric signals to the input end of the load control unit(40). The damper position sensing unit(60) is connected the output ends of the damper position fixing unit(50) and the rectifying unit(20) respectively and outputs electric signals by switching actions. The damper motor driving unit(70) is where a damper motor(M) is connected to the output end of the damper position sensing unit(60) and rotates.
Patent KR-20010025828-A (KR)
Inventor: KIM TAE SIK
IPC: E06B5/16
Filed: 1999-09-01
Abstract: PURPOSE: A steel door fabrication method is provided to fix and assemble front and rear plates, and upper and lower channels solidly without depending on welding, to make the steel door easily, and to embody a beautiful appearance. CONSTITUTION: One side part of a door forms on the side end of a front plate, and an introvert flange forms several combining slots vertically. A skirt has the introvert flange on the front end. A first heming part(17) forms a windbreak(15) on the other side end. Second and third heming parts(18) are formed to insert and press the corresponding skirt of the upper(13) and lower channels respectively on the upper and lower ends at the same time. A first skirt(21) forming the one side part of the door forms on the side of the rear plate, and the first skirt with an introvert flange is formed. The introvert flange has several hooks hanging in the combining slot. The other side of the door forms on the other side end, and a second skirt(22) with an extrovert flange pressing on the first heming part of the front plate forms. At the same time, the first and second heming parts are formed to insert and press the corresponding skirt of the upper and lower channel respectively, and are assembled each other.
Patent KR-20010025938-A (KR)
Title: Security mail system using encryption/authentication technology in internet
Inventor: LEE IN YEONG
IPC: G06F15/16
Filed: 1999-09-01
Abstract: PURPOSE: The security mail system using the encryption/authentication technology in the internet is provided to protect user mail information by the internet mail service. CONSTITUTION: The security mail system using the encryption/authentication technology in the internet comprises the security mail system(1), the authentication system(2), the directory system(3), the mail server(4), the DBMS(5), and the web browser(6). The security mail system(1) is the mail system so as to use the web server(9) with the CGI and Servlet(8) program. The authentication system(2) checks the applicant's ID and issues the certificated paper. The directory system(3) manages the information of the certificated paper and members. The mail server(4) provides the mail exchange service. The DBMS(5) manages the member and the information.
Patent KR-20010026871-A (KR)
Inventor: JEON IN
IPC: A61B5/055
Filed: 1999-09-09
Abstract: PURPOSE: Provided is a pick up device for detecting a resonance signal form the outside of an object, which is observed a resonance signal without damage of the original form of an object, and is detected a specific compound of surface of an object or two- or three-dimensional distribution of a specific atom by grasping the position of the resonance signal from an object. CONSTITUTION: The pick up device for detecting a resonance signal form the outside of an object comprises a pick up coil(20) for detecting the resonance of a specific compound by scanning magnetic flux generated from current flow to the object; and a control circuit(22) for detecting the resonance signal by guiding the current to the pick up coil or by inputting the current induced to the pick up coil according to the resonance of the specific compound. Particularly, the pick up coil scans the surface of the object according to at least one type of NQR(Nuclear Quadrapole Resonance) and NMR(Nuclear Magnetic Resonance).
Patent KR-20010027803-A (KR)
Title: 어묵 생산 기계
Inventor: KIM DUK HOAN
IPC: A23L17/00
Filed: 1999-09-15
Abstract: (1) 발명이 속한 기술분야 
     어묵의 준비된 재료를 공급하여 성형후 기름탕에서 튀겨 배출하는 기계. 
     (2) 발명의 목적 
     어묵을 생산함에 재료(반죽)가 준비된 상태에서 수작업에 의한 생산과 기계에 의한 생산 두가지 방법이 있으나 수작업시는 좁은 장소에서 즉석생산이 가능하나 제품의 품질이 균일치못하고 제품성형과정이 기름탕옆에서 하는 작업이라 더위에 시달리며 비위생적으로 생산되며, 기계에 의한 생산은 기계설비가 고가이어서 투자비가 많이들고 넓은 장소가 필요하여 대량생산, 대량판매가 가능한 경우만 기계생산이 가능하므로, 기계를 소형화한 가운데도 제품을 충분히 익게함은 물론 다품종 소량의 제품을 위생적으로 즉석생산하여 즉석판매가 가능하도록 발명하였음. 
     (3) 발명의 구성 
     본발명의 구성은 재료를 공급하는 호퍼와 호퍼안 재료를 원하는 양만큼 원하는 형상으로 일정한속도로 배출하는 공급기와 배출되는 재료를 이송하는 이송로라, 이송로라 위에서 얇은 판재형상 제품을 연속성형하는 성형로라와 성형된 재료를 절단하는 절단장치 그리고 이송로라에서 성형되고 절단되어 공급되는 판재제품을 받아 1차로 익히는 튀김로라와 튀김로라에서 1차로 익혀지며 모양이 완성되어 기름열탕에 투입된 판재 제품과 이송로라에서 직접 기름열탕에 투입된 둥근막대형제품과 타원단면의 제품을 완전히 익히기 위하여 기름열탕에 흐르도록 도와주는 튀김용 콘베어, 기름열탕에서 튀겨지면 위로 부상한 제품을 배출하는 경사지게 설치된 이송콘베어, 배출된 제품표면의 기름을 제거하는 기름제거로라로 구성되며 본 발명의 핵심은 첫째, 재료를 공급하는 공급기의 속도를 조정할 수 있게하고 공급기출구에 각종형상의 형판을 교환가능하게 설치하여 다양한 형태의 제품의 생산이 가능케 한 것이고 다음은 이송로라를 발명하여 로라의 표면에 공급기에서 배출된 재료가 부착되어 로라와 같이 회전하며 재료를 이송케하여 종래의 벨트콘베어를 대신케하고이송로라 표면에 접촉하도록 성형로라를 설치 로라와 로라틈을 조정 얇은 판재를 성형 둥근막대모양 제품이 펌프에서 성형되어 이송되어 오면 성형로라를 위로올릴 수 있게 고안, 성형로라를 위로 올림으로써 얇은 판재제품은 물론 둥근막대형 제품과 타원단면의 제품까지 손쉽게 연속성형케하고 같은 로라표면에 절단기를 부착, 가장 짧은 거리에서 절단작업이 가능케하여 성형절단된 제품이 둥근막대형 제품과 타원단면형제품은 이송로라 측면에서 분리대에 의해 분리되어 기름열탕에 투입되고 얇은 판재형 제품은 이송로라 밑에서 분리되어 기름열탕에 1/2이상 잠겨 뜨거워진 상태에서 회전하는 튀김로라에 공급, 튀김로라 표면에 부착되어 돌면서 제품이 1차로 익어 튀김로라 표면에서 제거장치에 의해 제품이 튀김로라에서 분리되어 기름탕중에 자유로운 상태로 방치되어도 제품의 모양이 흩트러지지 않고 탕중에서 완전하게 익혀지며 부상한 제품을 이송콘베어를 경사지게 설치, 한쪽 끝을 기름탕에 잠기게하여 탕중에 떠있는 제품을 이송콘베어에 의해 탕밖으로 배출하게 구성된 기계임. 
     (4) 발명의 효과 
     위와 같은 발명의 결과로 적은 인력(운전요원 1명,포장인원 제외)과 좁은장소(3평이상)에서 다품종(외경 20mm이하 길이 15mm이상의 둥근막대형 제품, 두께 1.5mm이상 폭 180mm이하 길이 30mm이상의 판재형 제품)의 제품을 위생적으로 즉석생산하여 신선한 상태에서 제품을 바로 소비자에게 공급하여 제품생산의 경쟁력을 높인 기계임.
Patent KR-20010037835-A (KR)
Inventor: SEO HYEON MI
IPC: H01M10/0585
Filed: 1999-10-20
Abstract: PURPOSE: A lithium ion polymer battery is provided which improves its stability and reliability by decreasing its badness rate. CONSTITUTION: The lithium ion polymer battery comprises: (i) a battery cell(20) where a positive plate(21), a negative plate(23) and a separator(25) are layered; (ii) a case(10) which accommodates the battery cell and electrolytic solution; and (iii) an insulating layer(30) which is placed on the inner side of the case to prevent short of the case and each pole plate, where the insulating layer is prepared by coating the inner side of the case with one material selected from polyethylene, polypropylene or teflon.
Patent KR-20010039150-A (KR)
Inventor: LEE GYU HAN
IPC: H01L29/78
Filed: 1999-10-29
Abstract: PURPOSE: A method for manufacturing a transistor of a semiconductor device is to prevent a bridge between junction regions from being formed due to a metal self-aligned silicide layer of a spacer provided with a gate electrode. CONSTITUTION: A silicon substrate(10) is provided with a pattern for gate electrode consisting of a gate oxide layer(11) and a polysilicon layer(12) on the surface thereof. With the pattern as a mask, an ion implantation is carried out to form a lightly doped drain region(13). The resultant upper surface is applied by a nitride layer(14). The nitride layer is etched to expose the pattern and the lightly doped drain region and thereby a self-aligned silicide region is formed along with a spacer on both sides of the pattern. The exposed lightly doped drain region is formed a source/drain junction(15,16) by an ion implantation, following a sputtering and an annealing to form a metal nitride layer(17) on the surface of the space and to form a self-aligned silicide layer(17a) on the source/drain junction. The resultanat surface is applied by an insulating layer(18). The source/drain junction and the polysilicon layer of the gate electrode pattern is exposed along with the spacer to form a contact hole(19) whose sidewall is provided with the insulating layer(18) by a chemical and mechanical polishing.