Patent SG-11201908486U-A (SG)
Title: Selective deposition on silicon containing surfaces
Inventor: TODD MICHAEL A
IPC: C23C16/04
Filed: 2018-03-16
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIP0 I PCT IiiimmomiolollmonolomolomoimionolomovoimIE (10) International Publication Number WO 2018/170382 Al (51) International Patent Classification: C23C 16/455 (2006.01) C23C 16/04 (2006.01) (21) International Application Number: PCT/US2018/022836 (22) International Filing Date: 16 March 2018 (16.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/472,724 17 March 2017 (17.03.2017) US (71) Applicant: VERSUM MATERIALS US, LLC [US/US]; 8555 S. River Parkway, Tempe, AZ 85284 (US). (72) Inventor: TODD, Michael A.; 8555 S. River Parkway, Tempe, AZ 85284 (US). (74) Agent: ROSSI, Joseph D. et al.; Stradley Ronon Stevens & Young, LLP, 30 Valley Stream Parkway, Great Valley Corporate Center, Malvern, PA 19355 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (54) Title: SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES OH OH OH OH OH HHHHHH Post Wet Cleans 1-1 C•1 00 Cr) O N 1-1 00 O 1-1 C•1 C OH OH OH H H H H H H Post Thermal Treatment FIG. 1 (57) : A method is disclosed for delectively depositing a material on a substrate wherein the substrate has at least two different surfaces wherein one surface is passivated thereby allowing selective deposition on the non-passivated surface. In particular, disclosed is a method for preparing a surface of a substrate for selective film deposition, wherein the surface of the substrate comprises at least a first surface comprising SiO2 and an initial concentration of surface hydroxyl groups and a second surface comprising SiH, the method comprising the steps of: contacting the substrate with a wet chemical composition to obtain a treated substrate comprising an increased concentration of surface hydroxyl groups relative to the initial concentration of surface hydroxyl groups; and heating the treated substrate to a temperature of from about 200 °C to about 600 °C, wherein the heating step converts at least a portion of the surface hydroxyl groups on the first surface to surface siloxane groups on the surface of the substrate. [Continued on next page] WO 2018/170382 Al MIDEDIMOMOIDEIREEMOMMEHOMEIHIEMOVOIS UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))