Patent EA-001454-B1 (EA)
Title: Radiation detector (variants)
IPC: G01T1/00
Filed: 2000-03-16
Abstract: 1. An emission detector comprising a photodiode and a load connected in series, the load of a signal output is connected at one end to the photodiode and at the other end to a common busbar, characterized in that said detector further comprises a transistor and an inquiry impulse generator, the second photodiode electrode is connected to the first transistor electrode, the controlling electrode of which is connected to the output of the inquiry impulse generator, and a third transistor electrode is connected to the common busbar. 2. The emission detector of claim 1, characterized in that an N group of elements is connected parallel to the load, each of the group comprises a photodiode and a transistor connected in series, and the inquiry impulse generator comprises N outputs, which of them is connected to the controlling transistor electrode from a corresponding group of elements, where N is an integer greater than 1 3. The emission detector of claim 2, characterized in that the detector comprises N loads wherein parallel to each i-load Ni groups of elements are connected, and a total plurality of the element groups comprising in the detector equals to a number of N outputs of the inquiry impulse generator, where L is an integral greater than 1, Ni is a positive integer. 4. The emission detector of claim 1 2 or 3, characterized in that parallel to the photodiodes capacitors are connected. 5. The emission detector comprising an element sensitive to emitting and a load, wherein the sensitive element is connected by one side to the busbar of supply voltage, and the load is connected by one side to the common busbar, characterized in that the detector further comprises a transistor, a capacitor and an inquiry impulse generator, wherein the sensitive element is connected by the other side to the first transistor electrode and the first capacitor plate, the second plate of which is connected to the load signal output, and the output of the inquiry impulse generator is connected to the transistor control electrode, the third electrode is connected to the common busbar. 6. The emission detector of claim 5, characterized in that N groups of elements are included between the busbar of supply voltage and the common busbar, each group comprises series connected element sensitive to emission and a transistor, the common point of which is connected via capacitor to the load signal output, and the inquiry impulse generator comprises N outputs, each is connected to the transistor control electrode from a corresponding group of elements, where N is an integer greater than 1. 7. The emission detector of claim 6, characterized in that the detector comprises N loads wherein a signal output of each i-load is connected to Ni groups of element groups, and a total plurality of the element groups comprising in the detector equals to a number of N outputs of the inquiry impulse generator, where L is an integral greater than 1, Ni is a positive integer. 8. The emission detector of claim 5 and/or 6 or 7, characterized in that resistors are included between the sensitive elements and the common points of transistors and capacitors. 9. The emission detector comprising an element sensitive to emitting and a load, wherein the sensitive element is connected by one side to the busbar of supply voltage, and the load is connected by one side to the common busbar, characterized in that the detector further comprises a transistor, a capacitor and an inquiry impulse generator, wherein the sensitive element is connected by the other side to the first transistor electrode, the output of the inquiry impulse generator is connected to the transistor control electrode, the third electrode of which is connected to the load output signal. 10. The emission detector of claim 9, characterized in that a capacitor is included between the first electrode of a transistor and common busbar. 11. The emission detector of claim 9 and/or 10, characterized in that a resistor is included between the first electrode of a transistor and the sensitive element.