baber/WOPTO huggingface dataset:
Patent JP-S56111003-A (JP)
Title: Refrigerating treatment
Inventor: MUTSUKUSHI TOSHIMI
IPC: B01D9/04
Filed: 1980-02-07
Abstract: PURPOSE: To enhance the supercooling degree of a liquid to be treated and increase generation of cryohydrate, by controlling the flow speed of solution in a cooling pipe within a transition range between a laminar flow and a turbulent one when the liquid to be treated is supercooled by means of indirect heat exchange.  
     CONSTITUTION: In a solution flowing inside a cooling pipe 5, its flow speed at transition point from laminar flow to turbulent one is determined beforehand and an opening of a flow rate control valve 8 is set to the values of definite range including the speed at transition point. The flow speed entering the cooling pipe 5 is detected by a flow meter 9, whose signal is sent to the flow rate control valve 8, so as to control a flow rate within the set values. In this method, Reynolds number of a solution in transition range is controlled within a range of approximately 1,600W3,200 by the flow meter 9 and flow rate control valve 8 in an operation, so that the supercooling degree of the liquid treated is enhanced and the generation of cryohydrate is increased. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S62172099-A (JP)
Inventor: OMIYA TAKEO
IPC: C11D3/382
Filed: 1986-01-24
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000212125-A (JP)
Title: Production of fluorine-containing carboxylic acid derivative
Inventor: MORI TATSUYA
IPC: C07C67/343
Filed: 1999-01-21
Abstract: PROBLEM TO BE SOLVED: To obtain the subject compound useful as an active ingredient for an insecticide and an acaricide or an intermediate for producing the active ingredient by reacting a specific carboxylic acid derivative with chlorodibromofluoromethane in the presence of triphenylphosphine and zinc. SOLUTION: A carboxylic acid derivative of formula I (R is a lower alkyl) [e.g. methyl (1R)-trans-3-formyl-2,2-dimethylcyclopropanecarboxylate] is reacted with chlorodibromofluoromethane in the molar ratio of preferably 1:(1.0-5.0) in the presence of triphenylphosphine and zinc to give the objective compound of formula II. Preferably the amount of triphenylphosphine used is 1.0-5.0 mols, preferably 1.5-3.0 mols based on 1 mol carboxylic acid derivative and that of zinc used is 1.0-5.0 mols, preferably 1.5-3.0 mols.
Patent JP-S59139618-A (JP)
Inventor: ITOU KAORU
IPC: H01F17/02
Filed: 1983-01-29
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H11204514-A (JP)
Title: Gas processing device
Inventor: TAKESHITA KAZUHIRO
IPC: H01L21/768
Filed: 1998-01-07
Abstract: PROBLEM TO BE SOLVED: To allow ammonia gas flow in an aging unit to be even for a good quality film when a coat liquid, wherein TEOS(tetraethoxysilane) for example, colloid is diffused in a solvent is coated on a semiconductor wafer by a coating unit, the colloid in the coated film is gelled by the again unit, and the solvent in the coated film is substituted with another solvent by a solvent substitution unit for obtaining an interlayer insulating film of silicon oxide film. SOLUTION: A slit-like gas guide opening 34a is provided outside a wafer W, and a straightening member 32 comprising a straightening surface part 37a which faces a surface to be processed of the wafer W, is so tilted as to become more distant from the wafer W when approaching the center part of a closed vessel, a protruding part 37c a region nearer to the center expanding downward, and a partition part 37b, which enclosing the side of the wafer W, forms a buffer chamber 38 outside of it, is provided in the closed vessel, for forming a uniform gas flow along the surface of the wafer W.
Patent JP-S60161060-A (JP)
Title: Conveying device
Inventor: FUJIWARA AKIHIKO
IPC: B23Q7/00
Filed: 1984-01-30
Abstract: PURPOSE:To provide simplified construction and reduction of downtime for switching operations of a conveying device in a transfer machine by connecting a conveying rod to a point of a chain trained along a rectangular path and rotatingly driven by a single actuator. CONSTITUTION:When a pin 7 of a n-th conveying device is located at a stop point A and a work 101 carried on a conveying rod 1 at the position indicated by full line is located at a work lift point B, a chain 4 is rotated counterclockwise along a rectangular path through a sprocket 2 by a servo-motor 8. This causes the conveying rod 1 to execute a cycle of ascending, advancing, descending and retracting. During this cycle, the work 10 ascends from the work lift point B, advances and descends at a station STn+1, and is released from the conveying rod 1 at a work release point C. This structure provides a simplified construction and reduction of downtime for switching operation.
Patent JP-S62276994-A (JP)
Title: Time division time switch control system
Inventor: HIRATA HIDEYUKI
IPC: H04Q11/08
Filed: 1987-01-22
Abstract: PURPOSE:To reconstitute a channel in the state of speech by switching the soft cycle and the hard cycle of two control memories with the aid of a mode switching signal. CONSTITUTION:A channel memory 20 which forms the channel to a call data output terminal 2 from a call data input terminal 1, a channel control memory 10 controlling the memory 20, a write control circuit 30 which selects a frame synchronous write mode and a frame asynchronous write mode and a channel control memory rewrite control circuit 40 are provided in a time division time switch. As to a memory 12 and 13 of the memory 10, the one is assigned as a channel data read dedication mode (hard cycle) and the other is assigned as a channel data read write mode (soft cycle) by a control signal SE. At the time of control data write, after it is written in the memory in the soft cycle, it is replaced with the memory in the hard cycle to be written. Thus the multiplicity of the control memory can be raised and the channel can be reconstituted.
Patent JP-H11217731-A (JP)
Title: Thermoadhesive conjugate fiber and its production
Inventor: WATANABE HIROYUKI
IPC: D01F6/84
Filed: 1998-01-27
Abstract: PROBLEM TO BE SOLVED: To obtain the subject low-heat shrinkage polyester-based conjugate fiber with good dimensional stability, suitable for affording textile structural products such as nonwoven fabrics hard to deform due to adhesive strength drop even if used in a high-temperature atmosphere, and to provide a method for stably producing the conjugate fiber in high quality. SOLUTION: The thermoadhesive sheath/core-type conjugate fiber is such one that the sheath component consists of a copolyester composed of terephthalic acid component, aliphatic lactone component, ethylene glycol component and 1,4-butanediol component and having a glass transition point of 20-80 deg.C, crystallization starting temperature of 90-130 deg.C and melting point of 130-180 deg.C and the core component consists of a polyalkylane terephthalate >=220 deg.C in melting point. This conjugate fiber has a dry heat shrinkage of <=3% at 130 deg.C.
Patent JP-S58131541-A (JP)
Title: Simultaneous measuring apparatus of quantities of leukocyte and hemoglobin
Inventor: TSUJI SHIROU
IPC: G01N15/14
Filed: 1982-01-30
Abstract: PURPOSE:To measure precisely a leukocyte and hemoglobin at the same time, by flowing a hemolytic sample or a smaple of chemically treated blood in a photometric flow passage and irradiating a single flux beam containing an absorption wavelength of the hemoglobin to the flow passage and then, measuring scattering light and transmitting light by each detector. CONSTITUTION:A blood sample in which hemoglobin in an erythrocyte has been converted into a hemoglobin component (for example, cyanmethemoglobin having about 541nm absorption wavelength) having an absorption spectrum being capable of measuring the absorbance by carrying out hemolysis of the erythrocyte only without bringing no change on a leukocyte, is flowed in a photometric flow passage 1 and a single flux beam containing a measuring wavelength of the hemoglobin component, is irradiated to a flow passage 1 and then, a scattering light 3 generated by the leukocyte 10 is reflected by a mirror 12 bored a hole. Then, a thromobocyte is distinguished from the leukocyte by a discrimination device by the intensity of an output signal from a photodetector 5a and only the leukocyte is counted by a counting device 7. Further, a light 4 passed the hole of the mirror 12 is passed through a spectral filter 13 and the intensity of the hemoglobin component wavelength is measured by an absorbance measuring device 8 and then, measured value of quantity of the hemoglobin is determined equantitatively by an apparatus 9.
Patent JP-H02196018-A (JP)
Title: Nd2cuo4-type oxide superconductor
Inventor: HIRATANI MASAHIKO
IPC: H01L39/12
Filed: 1989-01-25
Abstract: PURPOSE:To obtain the useful oxide superconductor to be used at above the liquefied He temp. by specifying the crystal structure. CONSTITUTION:The oxides of the rare-earth elements other than Ce, Pr, Tb, Tm, Yb, Lu, and Se, the oxides, carbonate, peroxide, etc., of the alkali (alkaline earth) elements, namely Ba, Sr, Ca, and Na, and cupric oxide are mixed as the raw material in a desired cationic ratio. The mixture is heated in an oxidizing atmosphere, then crushed, mixed, and formed. The formed product is subjected to a reaction in the atmosphere of Ar, O2, etc., to eliminate the lattice defect of O2. Consequently, the oxide superconductor shown by the chemical formula (Ln is Nd, Pm, Sm, Eu, Gd, Dy, Ho, Er, and Y, M is Ba, Sr, Ca, and Na, 0.001<=x<=0.15) and having an Nd2CuO4-type crystal structure is obtained.
Patent JP-S5399258-A (JP)
Title: Method of patterning
Inventor: SANAI TAKEZOU
IPC: B44C1/20
Filed: 1977-02-10
Abstract: PURPOSE: A patterned resin layer is formed using a liquid photosetting resin composition laid between two films, at least one of which is transparent, laminated on a base and sandblasted to pattern the base of a curved surface. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H05205776-A (JP)
Title: Chemical battery and electric power storage system
Inventor: TOKOI HIROMI
IPC: H01M10/39
Filed: 1992-01-29
Abstract: PURPOSE:To enhance the reliability of a battery by making a positive and a negative terminal conductive only when negative electrode active material is raised up to temperature equal to or more than its melting point, if the chemical battery is made up of a positive electrode region filled with positive electrode active material within a container, a negative electrode region filled with negative electrode active material within the container, and of solid electrolyte interposed between the aforesaid regions. CONSTITUTION:Na is filled in a Na electrode acting as a negative electrode as follows, the Na electrode is evacuated first, Na is filled in the uppermost section of a negative electrode container 4 by way of the uppermost section of a Na injection and electric current collection tube 8, and a filling port is hermetically sealed after filling has been over. The Na side tip end section of a negative electrode terminal 10 is then inserted into the electric current collection tube 8 thereafter. In this case, the tip end of the terminal 10 is so defined in dimension that its does not reach the level of Na. Namely, the length of the terminal 10 and the filling quantity of Na are adjusted in such a way that the container 4 acting as the terminal 10 and Na are in a non-contact condition. This thereby allows the level of Na within the electric current collection tube 8 to be positioned as indicated by the dotted line of a code number 12 at temperatures less than battery operating temperature without being brought into contact with the tip end of the terminal, and if temperature is equal to or more than battery operating temperature, the level is allowed to rise up to a position indicated by the solid line of a code number 13, so that electricity is conducted to the terminal 10.
Patent JP-H10215014-A (JP)
Title: Solid-state laser device
Inventor: NAKAYAMA MICHIO
IPC: H01S3/06
Filed: 1997-01-28
Abstract: PROBLEM TO BE SOLVED: To obtain a solid-state laser device which can prevent parasitic oscillation, by which the incident efficiency of ecitation light is increased and whose excitation efficiency is enhanced. SOLUTION: In a laser diode(LD) excitation solids-state laser device, a YAG laser medium 21 is irradiated with LD light so as to be excited, and light which is generated by the YAG laser medium 21 is optically resonated so as to be outputted as laser light by a Q-switching operation. In the LD excitation solid- state laser device, an antireflection coating 26 is formed on the incident face of the LD light at the YAG laser medium 21, and a diffusion face 7 is formed on a face opposite to the incident face of the LD light at the YAG laser medium 21.
Patent JP-S62172753-A (JP)
Title: Semiconductor memory and manufacture thereof
Inventor: SAKAMOTO MITSURU
IPC: H01L27/108
Filed: 1986-01-24
Abstract: PURPOSE:To increase the density and the capacity of a semiconductor memory by separating between groove-shaped capacities by semiconductor substrate containing high density impurity, storing information charge at capacity electrode side to suppress a leakage current and to reduce a software error rate due to alpha-particles. CONSTITUTION:A thin P-type silicon film layer 102 containing 10<14>-10<17> atoms/cm<3> is formed by an epitaxially growing technique on a P-type silicon substrate 101 containing 10<18> atoms/cm<3> or more of impurity density. After thus formed, the thin P-type silicon film layer is selectively thermally oxidized to form an insulating element separating region 103. Higher density impurity is abnormally diffused in the film layer under the region 103 than the substrate 101 by this thermal oxidation to contain high density impurity in a thin P-type silicon film layer 104 under the insulating element separating regin. After thus formed, grooves extending in the substrate 101 are formed in a desired region except the region 103, dielectric films 105 are deposited on the side walls of the grooves, and a capacity electrode 106 is formed of a polysilicon or a high melting point metal containing effective impurity in the attitude for burying the grooves.
Patent JP-H01190222-A (JP)
Title: Automatic power saving system for ac-dc machinery
Inventor: KANAYAMA AKIRA
IPC: H02J7/00
Filed: 1988-01-25
Abstract: PURPOSE:To eliminate troublesome and meaningless operations, by employing an automatic power save mode only when a battery is used as a power source and making the automatic power save mode ineffective when a commercial power source is used. CONSTITUTION:When an electronic machinery is operating with a commercial power source, i.e. when a jack plug (Jp) 3 is inserted into a jack socket (Js) 4, power is fed to a CPU 6 through a loop of an AC adapter   a tubular conductor 3a   a terminal 4b   the CPU 6 a terminal 4b   a tubular conductor 3b   an AC adapter 2. Since a signal S to be inputted to CPU 6 is brought to a low level through a pull-down resistance 7, CPU 6 detects that a commercial power source is employed and prohibits transfer to an automatic power save mode. When a cell is employed as the power source, i.e. when the electronic machinery is employing the cell as the power source or when the Jp 3 is not inserted into the Js 4, power is fed in the loop of the cell 5 a switch 4c   a terminal 4a   the CPU 6   the cell 5. At this time, the signal S to be fed to the CPU 6 is brought to high level and transfer to automatic power save mode is made.
Patent JP-2000216252-A (JP)
Title: Method and device for designing layout of semiconductor integrated circuit
Inventor: SATO KOICHI
IPC: H01L21/82
Filed: 1999-01-22
Abstract: PROBLEM TO BE SOLVED: To obtain a method and device for designing layout of semiconductor integrated circuit, with which the wiring path of a semiconductor integrated circuit can be made the shortest and the layout region of a functional circuit block can be made smallest. SOLUTION: By recognizing the arranging positions of the input or output terminals PIN of a functional circuit block BL1 and the arranging positions of standard cells CELL, having equipotential input or output terminals CP connected to an input or output terminals PIN of the block BL1, the input or output terminals CP of the cells CELL are connected to the input or output terminals PIN of the block BL1. In addition, an input or output terminal PIN12 of the block BL1 is moved to an input or output terminal CP25 of a standard cell CELL25 at the shortest distance from an input or output terminal PIN12 of the block BL1.
Patent JP-S60159982-A (JP)
Title: Optical character reading device
Inventor: ODA HARUHIRO
IPC: G06K9/20
Filed: 1984-01-31
Abstract: PURPOSE:To prevent the deviation of focal point of an optical system due to the curvature o a form etc. and to improve accuracy of reading by providing an automatic forcussing mechanism to an optical system in a device that focuses an image of characters etc. on a form on a line sensor by a lens. CONSTITUTION:When a form to be read comes to a specified position, a processing section 11 turns a spot light source 10 on, and projects the spot to the center of field of view of reading. At the same time, the processing section 11 obtains video signals for one scan of the form 5 from the line sensor 7. At this time, video signals outputted by the line sensor 7 have a peak caused by the spot light source 10 at the center if the form 5 is at a correct position. When the form 5 is separated from the guide and lifted up from the proper position, the spot image caused by the spot light source 10 is formed at a position deviated from the center of the line sensor. The processing section 11 calculates the deviation of focal point of the lens 6 to the form from the amount of deviation of the peak on the video signals, and outputs a driving signal to an actuator 9, and moves a base stand 8 to focus the lens 6.
Patent JP-S55107200-A (JP)
Title: Liquid recovery device having inclined pipe
Inventor: ISOBE KENJIROU
IPC: F17D1/08
Filed: 1979-02-13
Abstract: PURPOSE: To separate and recover a liquid from a two-phase fluid by providing a liquid recovery unit in a pipe-line through which the two-phase fluid is transferred.  
     CONSTITUTION: When a two-phase fluid being transferred has reached an inclined pipe 1', the area in the pipe which is occupied by a liquid increases so that a lower fraction of the liquid in the pipe 1' flows downwardly (in the upstream direction) along the bottom portion thereof. In order to make use of this phenomenon, in which a lower fraction of the liquid in the pipe 1' flows downwardly, a bore is made in the bottom portion of the pipe 1', and a liquid recovery pipe 5 is fitted into the bore to allow the liquid to flow thereinto. As a result, the liquid fraction in that portion of the inclined pipe 1' which is above the liquid recovery pipe 5 flows continuously in the downward direction thereinto so that the interior of the pipe 1' is substantially occupied by a gas alone. The liquid collected in a tank 4 is transferred to a predetermined a predetermined place through a by-pass 8. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-H0582634-A (JP)
Title: Manufacture for composite semiconductor substrate
Inventor: SHIMIZU AKINORI
IPC: H01L21/02
Filed: 1992-01-30
Abstract: PURPOSE:To provide an economical manufacturing method, by improving electrical contact in a connecting part of a composite semiconductor substrate, in which a pair of semiconductor substrates are bonded with a dielectric-separating oxide film in between and are electrically connected through an opened connecting part of the dielectric-separating oxide film. CONSTITUTION:An acid-proof mask film M is formed on a surface of a semiconductor substrate 1 with a pattern of a connecting part C. The surface of the substrate is oxidized so that an oxide film 3 is formed every place other than the mask film M, and then is abraded to such an extent that the face of the substrate 1 under the mask film M is exposed, but the oxide film still remains. Then, the other semiconductor substrate 2 is bonded to the abraded face of the substrate 1 and a composite semiconductor substrate 10 is formed. Moreover, both semiconductor substrates 1 and 2 are connected through a semiconducting part 1b of the substrate 1 at the connecting part C, and at the same time the two substrates 1 and 2 are insulated from each other with a dielectric-separating oxide film 3 in between.
Patent JP-H05188722-A (JP)
Title: Color image forming device
Inventor: OYAMADA SHUICHI
IPC: B41J2/525
Filed: 1991-02-05
Abstract: PURPOSE:To provide a color image forming device capable of obtaining a visually faithful image to an original image. CONSTITUTION:Image processing information obtained by the color resolution of original image information, is outputted to an image processing circuit 15 by a controller 14, the image processing circuit 15 selects corresponding ROMs (n) (n=1, 2, 3, and 4) 17a, 17b, 17c, and 17d, with the color information of the image processing information, outputs addresses corresponding to gradation levels, to the ROMs (n) (n=1, 2, 3, and 4) 17a, 17b, 17c, and 17d, with the gradation information of the image processing information, and a PWM circuit 16 specified by the addresses of the ROMs (n) (n=1, 2, 3, and 4) 17a, 17b, 17c, and 17d, having data that a visual characteristic is considered in each color, executes a pulse width modulation, based on PWM data, and controls an LD1, to attain optical writing.
Patent JP-H11214524-A (JP)
Title: Semiconductor device and its manufacture
Inventor: KURANOUCHI ATSUSHI
IPC: H01L27/082
Filed: 1998-01-27
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing the characteristic deterioration of a transistor caused by the absorption of H atom due to a Ti- based barrier metal film in the semiconductor device where various kinds of elements are mixedly mounted on a common semiconductor substrate. SOLUTION: In a semiconductor device where a V-NPN transistor and an L-PNP transistor, an MIS capacitance element, and a polysilicon low-resistance element are mixedly mounted on a common P-type silicon substrate 10, the surface of an N-type base region 12LB is covered with a first-layer silicon oxide film 16, a second-layer silicon oxide film 19, a silicon nitride film 21, and a third-layer silicon oxide film 22, and the contact between Ti-based barrier metal films 31LE and 31LC such as an emitter electrode 33LE and an emitter lead electrode 18LE or the like is made through a connection window that is opened at the second-layer silicon oxide film 19, the silicon nitride film 21, and the third-layer silicon oxide film 22.
Patent JP-H05205907-A (JP)
Title: Zinc oxide varistor and manufacture thereof and crystallized glass composition for coating use
Inventor: KATSUMATA MASAAKI
IPC: C03C3/19
Filed: 1992-01-30
Abstract: PURPOSE:To provide a highly reliable zinc oxide varistor and its manufacturing method, and an oxide ceramic coating crystallized glass composition. CONSTITUTION:A side-face high resistance layer 3, consisting of crystallized glass having PbO as the main component and containing at least 0.1 to 5.0wt.% of Y2O3, is formed on the side face of a sintered body 1 having ZnO as the main component. Crystallized glass paste of 10.0 to 100.0mg/cm<2> is applied to the side face of the sintered body, a baking treatment is conducted in the temperature range of 450 to 650 deg.C, and a side face high resistance layer 3 is formed. The crystallized glass is composed of PbO-ZnO-B2O3-SiO2-Y2O3 containing Y2O3 of 0.1 to 5.0wt.%.