baber/WOPTO huggingface dataset:
Patent TW-576826-B (TW)
Title: Glass-ceramic substrate for an information storage medium and a method for manufacturing the same
Inventor: GOTO NAOYUKI
IPC: C03C3/097
Filed: 1999-09-07
Granted: 2004-02-21
Abstract: A glass-ceramic substrate for an information storage medium made of a glass-ceramics having a crystal phase dispersed in a glass matrix has a ratio of crystal phase (the amount of crystal) in the glass-ceramics is within a range from 50 wt% to 70 wt% and crystal grains having an average crystal grain diameter within a range from 0.10 mum to 0.50 mum are exposed on the surface of the substrate. The glass-ceramics substrate has Young's modulus within a range from 95 GPa to 160 GPa, specific gravity within a range from 2.40 to 2.80, and a ratio of Young's modulus to specific gravity within a range from 39 GPa to 57 GPa. The glass-ceramic substrate has a surface microstructure in which respective crystal grains present in a surface portion of the substrate are fixed to the surface portion with half or more in volume of the respective crystal grains being exposed above the surface of the glass matrix.
Patent TW-429482-B (TW)
Title: Method of improving plasma process induced damage
Inventor: WANG MU-JIUN
IPC: H01L21/324
Filed: 1999-09-28
Granted: 2001-04-11
Abstract: This invention discloses a method of improving plasma process induced damage. A substrate having the first conduction type is provided and the implantation procedure of the second conduction type well region is performed. When forming well region by implanting ions, several stages of implantation procedures are performed so as to make the implanted ions distribute uniformly at different depth in substrate. At the first stage, the second conduction-type ions with high energy and high dosage are implanted into substrate to determine well depth. A junction interface is generated between the first conduction-type substrate and the second conduction-type well. But dopant with high dosage can cause defects in well region so as to generate slight leakage channel from well region to substrate. Therefore, the charge accumulation of the well region on the parasitic capacitance, which is generated at the junction interface, to influence the characteristic of device on the well region can be avoided.
Patent TW-437206-B (TW)
Title: System for the marketing of telecommunications traffic capacity
Inventor: ROSU CORNELIU S
IPC: H04Q3/00
Filed: 1999-10-28
Granted: 2001-05-28
Abstract: A plurality of telecommunication traffic providers are connected to supply information about the current utilization of their networks to a dedicated network element to which is also connected a plurality of potential buyers of traffic capacity. The dedicated network element includes local and wide area data networks over which information about the existence of available network capacity among the providers is communicated to an administration center. The administration center makes that information available via the data network to the participating potential buyers and, thereafter, brokers the sale of the available telecommunication capacity from providers to buyers. It also monitors and assures that the buyers receive the benefit of their purchased capacity and the terms under which their sales were made.
Patent TW-425734-B (TW)
Title: Electric feed horn
Inventor: DOU YUANZHU
IPC: H01Q13/02
Filed: 1999-12-07
Granted: 2001-03-11
Abstract: This invention provides a small-sized, highly directional electric feed horn that has elliptical direction property and improved crosstalk. The solving means of this invention is to have the waveguide tube 5 with circular opening 5a, and the horn portion 4 that has the elliptical opening portion 6 combined with the waveguide tube 5. Plural elliptical slots 7 are formed on the internal face of the elliptical opening portion 6, in which the separation is maintained for both the axial direction from the front end 4b of horn portion 4 toward the direction of waveguide tube 5 and the radial direction. Plural elliptical extruding portions 8 of the axial direction extension are separated by the formation of slot 7. The front-end portion 8a of the extruding portion 8 is formed to have height difference that follows the center portion of the radial direction and gradually closes to the side of waveguide tube 5. The elliptical opening portion 6 of the horn portion 4 is formed to have the elliptical taper-shaped portion 9 with horn-shape that expands from one end 5a of circular opening portion toward the front-end portion 4b of horn portion 4.
Patent TW-548405-B (TW)
Title: Apparatus and method for fabricating flat workpieces
Inventor: NOY AMIR
IPC: G02F1/13
Filed: 1999-12-21
Granted: 2003-08-21
Abstract: Method and apparatus for manufacture and inspection of flat articles, such as flat panel display substrates, that are manufactured in a contamination-sensitive environment. In particular, a manufacturing step such as applying coatings to the article is performed in a self-contained micro-environment, typically characterized by an airborne particulate concentration which is substantially lower than its surroundings. Automated inspection apparatus is provided inside the self-contained micro-environment of the fabrication equipment to inspect the article after completion of the fabrication step and before transfer of the article to other fabrication equipment. The inspection apparatus includes an illumination subsystem illuminating the article with various configurations of dark field and bright field illumination, a staring array sensor capturing images of the article under various illumination configurations and a computer that analyzes the images to automatically detect defects.
Patent TW-452562-B (TW)
Title: Plastic film for use in making pneumatically filled packing cushions
Inventor: AQUARIUS PETER THEODORUS JOSEP
IPC: B65D81/05
Filed: 2000-01-13
Granted: 2001-09-01
Abstract: Plastic film material for use in the manufacture of pneumatically inflated packing cushions. The material has two longitudinally extending superposed layers of film material joined together along at least one edge, transverse rows of perforations extending across the superposed layers, and seams sealing the two layers together along transverse lines on opposite sides of and in close proximity to the rows of perforations. In some embodiments, the film material is in the form of a flattened tube, and in others it is a centerfold material in which the film is folded along its centerline. In some embodiments, a marker is placed on the film for use in positioning the film in a machine which introduces air and seals the film to form the cushions.
Patent TW-449818-B (TW)
Title: Semiconductor device and the manufacturing method thereof
Inventor: SETA SHOJI
IPC: H01L27/108
Filed: 2000-03-08
Granted: 2001-08-11
Abstract: The present invention relates to a semiconductor device and the manufacturing method thereof, especially to a shape working technology of inter-layer insulating film. In the prior technology of dry etching method, since the silicon substrate is organic silicon oxide film, it is prone to have the problem of stopping the etch by selectively etching to apply the etching of organic silicon oxide film. Also, in the working of groove and the groove of double pattern, it is difficult to control the depth of the groove on the surface of the chip, and the silicon nitride film is in the organic silicon oxide film. Therefore, the dielectric constant (capacitance) of the interlayer insulation film increases, and the wiring capacity increases, which may cause the problem of slowing down the transmission speed. In the solution, when the working of organic silicon oxide film is formed, the formation of silicon oxide 3 and 3' is proceeded after the contact hole of silicon oxide 3 is formed into a columnar body and the organic silicon oxide film 4 is deposited. Next, the working and formation of the contact hole and groove of organic silicon oxide film are proceeded.
Patent TW-486577-B (TW)
Title: Apparatus for displaying and recording video signal of radar
Inventor: LIU GUANG-SHEEN
IPC: G01S7/12
Filed: 2000-03-29
Granted: 2002-05-11
Abstract: The present invention relates to an apparatus for displaying and recording video signal of radar which is capable of simultaneously displaying the video signal of radar for whole region or specific region with polar coordinates and orthogonal coordinates, respectively. More particularly, the present invention relates to an apparatus which is capable of storing the video signal of radar for specific region in hard disk to obtain long-time continue video signal of radar for such region to be used for subsequent analysis and practical examination of algorithm. The object of present invention is achieved by implanting a radar video signal capturing interface card into a PC platform so as to store the radar video signal for whole region or specific region, and by making it possible to simultaneously display the video signal of different processing stage in a digital video signal processing unit to assist the observation of working condition in each processing stage.
Patent TW-527536-B (TW)
Title: Method to trace in system on chip architecture
Inventor: AMANDI DIRK
IPC: G06F11/36
Filed: 2000-04-19
Granted: 2003-04-11
Abstract: In a system on chip arrangement, the data states of a plurality of components are tested, selected, and it is provided with a source identifier and a time stamp, and the data gather together according to their priorities and are distributed to an interface so that it can be utilized. The width of the trace interface (the number of pins on the chip) and the complexity of the tracer are minimized.
Patent TW-507491-B (TW)
Title: Aligned feeding method and device
Inventor: OHASHI MASAYOSHI
IPC: H05K13/04
Filed: 2000-05-19
Granted: 2002-10-21
Abstract: The present invention relates to an aligned feeding method and device for electric component on other electrical components, by which, for example, the alignment marks of IC chips can be consistently positioned on a liquid crystal panel. The method is to obtain a method of positioning an electrical component and a device thereof, by which a first electrical component to be mounted onto a second electrical component can be positioned relative to an adsorbing head, without the need for a pre-alignment stage. IC chips, serving as first electrical components, are sucked by suction heads and are supplied to the positions of a liquid crystal panel serving as a second electrical component. In this case, the suction heads sucks the IC chips in concave parts of a vessel. Then, the suction heads are shifted in the X-direction and the vessel is shifted in a Y direction, so that the IC chips are brought into contact with walls of the concave parts. Afterwards, a shift is made in the X and Y-directions so as to change the positions of the IC chips relative to the suction heads, thereby positioning the IC chips.
Patent TW-478274-B (TW)
Title: Automatic page turning-over apparatus for bound papers
Inventor: HA YOUNG-KYUN
IPC: H04N1/10
Filed: 2000-06-08
Granted: 2002-03-01
Abstract: The object of the invention is to provide an automatic paper turning-over device capable of eliminating the inconvenience of manual operation, increasing the operating accuracy and picture taking speed, ensuring the convenience of taking pictures for bound papers, and suitable for image capturing devices. To accomplish the object, there is provided an automatic paper turning-over device for a bound document suitable for an image scanning device which scans and treats an image information of the sheet, and obtains a desired image from the treated image information, which comprises: a lifting means for the bound document, having a transparent member consisting of a transparent material such as a glass plate, a padding member, which is rotational about a pivot member 23 at a predetermined angle, for vertically lifting and descending a binding portion of the bound document spread out opposite to the transparent member by a cylinder portion 21, and an elastic piece mounted on the lower portion of the supporting member for damping a pressure to the transparent member; a pressing means having a pressing piece for pushing up the opposite sides of the binding portion of the bound document while being lifted and descended so that a picture taking face of the bound document may be in closely contact with the transparent member, an elastic piece mounted coaxially with the pressing piece, and a cylinder portion for lifting and descending the pressing piece and the elastic piece; a sheet-turning over means having a sheet-lifting section mounted to lift the picture taken sheet about the center direction of the bound document, and a sheet-turning over portion for reciprocating a turning over bar in the space defined by the sheet-lifting section to turn over the sheet in a left-right movement; and a controller for controlling a series of lifting, pressing and sheet-turning over processes of the bound document.
Patent TW-451362-B (TW)
Title: Manufacturing method of high voltage device compatible to low voltage device
Inventor: YANG SHENG-SHIUNG
IPC: H01L21/335
Filed: 2000-07-31
Granted: 2001-08-21
Abstract: A manufacturing method of high voltage device compatible to low voltage device is disclosed, which comprises providing a substrate; forming an oxide layer on this substrate; forming an N-well and a P-well on this substrate; forming plural N-fields on this P-well as the drift region and on this N-well as the insulation region; forming plural P-fields on this N-well as the drift region and on this P-well as the insulation region; forming plural N<SP>+</SP>-type doped regions on this P-well by N-grade implantation; forming plural N<SP>+</SP>-type doped regions on these N<SP>+</SP>-type doped regions as the source/drain of one of the NMOS transistors on P-well; form plural P<SP>+</SP>-type doped regions on N-well as the source/drain of one of the PMOS transistors. This polysilicon gate layer is defined to form the gate. This gate is across one channel of this NMOS/PMOS and one portion of neighboring field oxide.
Patent TW-471126-B (TW)
Title: Manufacturing method for dual damascene of copper connection
Inventor: CHEN CHAO-CHENG
IPC: H01L21/768
Filed: 2000-08-30
Granted: 2002-01-01
Abstract: An innovative manufacturing method for dual damascene of copper connection which is characterized in that after removing the etch stop layer at the bottom of the via, the plasma processing with the gas containing nitrogen and hydrogen is performed to replace the oxygen portion in the oxide layer on the sidewall of the via. Therefore, during the cleaning within the wet bench, it will be easier to be etched with an acid solution so that the whole profile of the sidewall of the via can be smoother. By the above described method, the undesired effect at the undercut of the via can be greatly reduced.
Patent TW-488172-B (TW)
Title: Method and device to reduce the electromagnetic radiation of cathode ray tube display
Inventor: SHIE CHANG-FA
IPC: H04N5/68
Filed: 2000-10-04
Granted: 2002-05-21
Abstract: A method and device to reduce the electromagnetic radiation of cathode ray tube display is disclosed, wherein the amplitude, phase of the pulse of the voltage signal provided by the two terminals of the horizontal deflection yoke in the cathode ray tube display are equal, and the polarities of which are opposite. Therefore, the electromagnetic radiation generated by the two terminals of the horizontal deflection yoke can cancel each other at the equidistance position to the two terminals. Thus, the electromagnetic radiation and cost can be reduced without modifying the cathode ray tube and increasing the power consumption.
Patent TW-464936-B (TW)
Title: Hydrogen annealing process and apparatus therefor
Inventor: TAKAKUWA YASUNORI
IPC: H01L23/52
Filed: 2000-11-13
Granted: 2001-11-21
Abstract: An apparatus for selectively implementing a depressurized or an atmospheric hydrogen annealing process comprises a reaction chamber, a hydrogen gas introduction line for feeding hydrogen gas into the reaction chamber and an atmospheric exhaust line and a depressurized exhaust line, which are connected to the reaction chamber. By selectively switching the atmospheric exhaust line and the depressurized exhaust line, the depressurized hydrogen annealing process and the atmospheric annealing process are selectively implemented. A device for performing deoxidization process or a device for removing impurities may be further included.
Patent TW-556280-B (TW)
Title: Method of preventing silicon powder residue after wafer dicing
Inventor: LIN YUAN-FU
IPC: H01L21/304
Filed: 2000-11-17
Granted: 2003-10-01
Abstract: A kind of method of preventing silicon powder residue after wafer dicing is disclosed. A coating layer is applied on the surface of the wafer before wafer dicing, which is followed by sending the wafer with the coating layer thereon into wafer dicing machine to be diced. After the wafer is diced, the coating layer on the wafer is removed. Through the coating layer covered on the wafer surface, the silicon powder produced during wafer dicing remained on the chip surface traditionally can be prevented as it affects the subsequent manufacturing processes and product quality. Through the process removing the coating layer on the wafer surface, the silicon powder remained on the surface of the coating layer can be cleared away at the same time.
Patent TW-501368-B (TW)
Title: Video signal conversion device and video signal conversion method
Inventor: MORITA TOMOKO
IPC: G09G5/00
Filed: 2000-11-27
Granted: 2002-09-01
Abstract: The present invention relates to an image signal conversion device and an image signal conversion method. That is, with the data stored in the field memory part, video data of a field necessary for I/P conversion and scanning line conversion is stored in a field memory part. Vertical frequency conversion is performed by a memory control processing part. I/P conversion is performed by an I/P conversion processing part. Scanning line conversion is performed by a scanning line conversion part. Horizontal pixel conversion is performed by a horizontal pixel conversion processing part.
Patent TW-495870-B (TW)
Title: Polishing method of metal thin film
Inventor: TZENG HUNG-HUEI
IPC: H01L21/304
Filed: 2000-12-14
Granted: 2002-07-21
Abstract: The invention contains a step of forming a trench on the dielectric layer. A conductive layer is formed on the dielectric layer and is used to fill up the trench. A directional deposition is conducted by using metal ion plasma technique so as to form the conductive material on the horizontal surface of the conductive layer for the polishing stop layer. The conductive material on the conductive layer exceeding non-trench region is removed by using CMP method. After that, the conductive layer on the non-trench region is removed to the upper surface of the dielectric layer such that a conductive stacked-bump, composed of the conductive layer and the conductive material inside the trench, is formed to reduce recess effects.
Patent TW-457396-B (TW)
Title: Improvement methods and their apparatus in ghost image on the projected image or its periphery
Inventor: WANG KEN
IPC: G03B21/26
Filed: 2001-02-02
Granted: 2001-10-01
Abstract: Improvement methods and their apparatus in ghost image on the projected image and its periphery of a projector are disclosed. The image projecting system of the projector includes an illuminating optical system and an image forming system. The illuminating optical system is composed of a light source, an illuminating system, a field lens, and a reflective panel while the image forming system is composed of a field lens, an image-forming lens set, and a screen. The improvement methods in ghost image include changing the radius of curvature of the S1 surface of the field lens that is facing the light source in the area where the ghost image is generated. In this way, the ghost image located in this area is reflected toward the outside of the stop or is diverged off to eliminate the ghost image.
Patent TW-I244157-B (TW)
Title: Manufacturing method of the shallow trench isolation
Inventor: JENG PEI-REN
IPC: H01L21/76
Filed: 2001-02-06
Granted: 2005-11-21
Abstract: A manufacturing method of the shallow trench isolation is disclosed, which utilizes the nitrogen ion implantation or nitrogen plasma to add, after completion of the shallow trench etching, one step of silicon nitride deactivation to make the pad oxide layer exposed on the upper edge of shallow trench side-wall be nitrogenized and form the silicone oxide nitride layer. Therefore, the activation capability of the oxide layer will be lowered, which makes the bird's beak on the upper edge of shallow trench be suppressed to meet the requirement of the future downsize of devices.
Patent TW-592804-B (TW)
Title: Catalyst for purification of exhaust gases, production process therefor, and process for purification of exhaust gases
Inventor: MASAKI SHINYUKI
IPC: B01J23/22
Filed: 2001-03-07
Granted: 2004-06-21
Abstract: The present invention provides: a catalyst for purification of exhaust gases which catalyst is excellent as a denitrification catalyst which has still more excellent ability to remove nitrogen oxides and of which the ability to oxidize sulfur dioxide into sulfur trioxide is extremely suppressed and further as a catalyst which is favorable for efficiently removing organohalogen compounds, such as dioxins, from exhaust gases; a production process therefor; and a process for purification of exhaust gases. The catalyst for purification of exhaust gases comprises titanium oxide, molybdenum oxide, and vanadium oxide as catalytic components, wherein the titanium oxide and the molybdenum oxide are included in the catalyst in the form of: a binary closely mixed oxide which is beforehand prepared and includes titanium and molybdenum; and/or a trinary closely mixed oxide which is beforehand prepared and includes titanium, silicon, and molybdenum.
Patent TW-491947-B (TW)
Title: Radiation test system
Inventor: WU KUANG-SHR
IPC: G01T1/00
Filed: 2001-03-12
Granted: 2002-06-21
Abstract: A kind of radiation test system is connected to the radiation controller of the radiation test field. The radiation controller records the radiation flux and the test results of the devices under testing, and controls the accelerator generating the radiation particles so as to generate periodic radiation to irradiate the device to be tested. The radiation test system includes a test sub board, a test mother board, a power supply, a near site monitor and a far site monitor. The near site monitor is used to initiate a test program to perform the test so as to monitor and record both test results and data of the tested device. The far site monitor is capable of controlling the near site monitor remotely in order to conduct the irradiation test onto the device to be tested, and is capable of receiving the test data sent by the near site monitor so as to judge the tested device undergone with the irradiation.
Patent TW-480597-B (TW)
Title: Device and method for executing the generation of recipes chain
Inventor: CHIN HUNG-JR
IPC: H01L21/26
Filed: 2001-04-09
Granted: 2002-03-21
Abstract: The present invention provides a storage device for storing the generation of recipes chain. The storage makes an implanter execute a series of implantation steps, which include: transferring a wafer into an implanter; selecting at least one recipe, each recipe including a plurality of continuously executed implantation parameters; performing an implantation step to the wafer in the implanter based on the continuously executed implantation parameters of the recipe without taking the wafer off; and removing the wafer from the implanter after completing the implantation step. The method for generating a recipes chain of an implanter comprises: opening an operating display which comprises a recipe catalog area and a executing recipe area; and selecting and moving at least one recipe in the recipe catalog area to the executing recipe area for forming the recipes chain.