baber/WOPTO huggingface dataset:
Patent TW-380342-B (TW)
Title: Allocating and de-allocating transmission resources in a local multipoint distribution services system
Inventor: ROARK CHARLES W
IPC: H04W76/02
Filed: 1998-05-08
Granted: 2000-01-21
Abstract: A method is provided for allocating and deallocating transmission resources in a local multipoint distribution services system. In the method, one of an off-hook after idle signal and an incoming call request signal is detected. A frequency and a time slot for a call are assigned at a base system in response to the detection of the off-hook after idle signal or the detection of the off-hook after idle signal of the incoming call request signal. A customer premises equipment unit is tuned to the assigned frequency in order to deliver the call.
Patent TW-385534-B (TW)
Title: Stacked silicon-controlled rectifier having a low voltage trigger and adjustable holding voltage for ESD protection
Inventor: CHEN JULIAN-ZHILIANG
IPC: H01L27/02
Filed: 1998-03-23
Granted: 2000-03-21
Abstract: An SCR (68) for protecting an integrated circuit (62) against ESD events is provided having a trigger voltage which is automatically adjusted to different trigger voltage levels in response to power being applied to the integrated circuit (62). An enhancement-type P-channel transistor (78) is provided for determining the trigger voltage. When operating power is not being applied to the integrated circuit (62), the P-channel transistor (78) threshold voltage determines the voltage at which the SCR (68) is triggered. When operating power is being applied to the integrated circuit (62), the operating voltage and the threshold voltage for the P-channel transistor (78), and then the operating voltage and the threshold voltage for the p-channel transistor (78) determine the trigger voltage of the SCR (68). Then, a PNP and NPN transistor pair (76,80) that form the SCR (68) are latched to shunt the protected signal path (69) to ground. The SCR (68) remains latched until the voltage applied to the signal path (69) falls beneath a holding voltage of the SCR (68) . A plurality of the SCRs (126,128) may be connected in series, such that the overall holding voltage for the series of SCRs (126,128) is approximately equal to the sum of the individual holding voltages for the SCRs (126,128), which overall holding voltage is greater than the trigger voltage. Preferably, the  SCR (68) is isolated from the P substrate (92) by a P-N junction which is provided by disposing the SCR (68) within an N-tank (98).
Patent TW-439133-B (TW)
Title: Multi-gate method for forming silicide
Inventor: TSAI GUAN-JR
IPC: H01L21/28
Filed: 1998-03-09
Granted: 2001-06-07
Abstract: The present invention discloses a method for forming a titanium silicide gate to decrease the resistance of the deep sub-micron device. The method comprises: forming an oxide layer on the surface of the substrate; using the low pressure chemical vapor phase deposition method to form a polysilicon layer on the oxide layer; forming a titanium nitride layer on the polysilicon layer; forming a TiSi2 layer on the titanium nitride layer; forming an amorphous silicon layer on the titanium nitride layer to obtain a titanium silicide layer; next, sputtering a titanium layer on the amorphous silicon layer; forming a titanium nitride layer on the titanium layer; performing two thermal annealing processes to form a titanium silicide layer on the titanium nitride; then, using a peeling off step to remove the titanium layer and titanium nitride layer without being reacted; and finally, using a standard photolithography and etching technique to form a gate structure.
Patent TW-477818-B (TW)
Title: Method for processing chromium oxide-containing substances in large quantities, method for utilizing the processed substances, and products comprising the processed substances
Inventor: MATSUNAGA HISAHIRO
IPC: C22B7/04
Filed: 1998-03-19
Granted: 2002-03-01
Abstract: A method of rapidly reducing chromium oxide-containing slag and the like in large quantities, in a simplified manner and without requiring high temperatures. Chromium oxides are reduced with at least one of elementary sulfur and compounds of sulfur having a valence less than 6. For an aqueous solution of the sulfur component, desirably, its sulfur content is more than 0.03% by weight. As the sulfur source, preferred is blast furnace slag (e.g., non-aged, gradually-cooled blast furnace slag) that is discharged in large quantities in the iron industry. Cr<SP>6+</SP> in chromium oxides is reduced in one of the following ways: (a) Chromium oxide-containing substances are sprayed with or immersed in blast furnace slag-released water that has been used in cooling blast furnace slag. (b)chromium oxide-containing substances are mixed with blast furnace slag, and then kept in an air atmosphere. Optionally, the mixture is sprayed with blast furnace slag-released water. (c) Chromium oxide-containing substances are mixed with blast furnace slag, and then steamed. (d) Prior to the reduction treatment, chromium oxide-containing substances are preferably steamed. 100 parts by weight of reduced chromium oxide-containing compounds are mixed with from 0.1 to 90 parts by weight of sulfur-containing slag.
Patent TW-518443-B (TW)
Title: Projection type liquid crystal display apparatus
Inventor: ITOH OSAMU
IPC: G02F1/1343
Filed: 1998-07-27
Granted: 2003-01-21
Abstract: This application relates to a projection type liquid crystal display apparatus. For providing a high contrast ratio, a projection type liquid crystal display apparatus of this invention comprising: a liquid crystal display device, an optical system having a drive device and a polarization means, and a light source. The liquid crystal display elements (25, 26, 27) are provided with an active element connected to reflective electrode. Driving voltages applied to pixels have different polarities in every row. The liquid crystal layer is aligned at an angle from 75 DEG to 105 DEG to the direction of an electric field between electrodes. An optical rotator (31, 32, 33) is provided between the liquid crystal display device and the polarization device (21, 22, 23).
Patent TW-393624-B (TW)
Title: Chipset that reads ROM from its peripheral pins
Inventor: JANG NAI-SHUEN
IPC: G06F9/305
Filed: 1998-08-06
Granted: 2000-06-11
Abstract: This invention concerns a chipset that reads ROM from its peripheral pins. A switching circuit is built in the chipset. When the computer is booted, the switching circuit switch to the boot control circuit, then the boot program stored in ROM is read from the peripheral pins of chipset and the contents of ROM are moved into the host memory. After that, the switching circuit switches to peripheral control circuit of the chipset so that the chipset can communicate with external peripheral devices through its peripheral pins. By this means, chipset with low pin count can also use ROM of conventional control method and lower the production cost.
Patent TW-544484-B (TW)
Title: Extendable outer forms for grouting partition wall
Inventor: WU MING-YU
IPC: E04B2/84
Filed: 1998-08-18
Granted: 2003-08-01
Abstract: This invention provides extendable outer forms for grouting partition wall, mainly of how to joint extendable fixing clip to vertical members of the outer forms to make outer forms extendable, ease to be set, anti-tipping, and with regular intervals in order to amend conventional defects of single vertical members of outer forms.
Patent TW-429715-B (TW)
Title: Multi-service handling by a single mobile station
Inventor: BEMING PER
IPC: H04L29/06
Filed: 1998-09-18
Granted: 2001-04-11
Abstract: A method for processing multiple data services over a communications link between a mobile station and a base station is disclosed. A RLC/MAC protocol layer of the communications link between a mobile station and a base station receives a plurality of radio bearer services each including at least one service provided by the mobile station. The plurality of radio bearer services are processed in such a manner that services having substantially similar quantity of signal requirements are combined for transmission on a single logical channel. Data within the transmission blocks may be prioritized to enable flexible control of transmission rates.
Patent TW-393802-B (TW)
Title: Improved dielectric resonator
Inventor: JANG HUNG-YI
IPC: H01P7/10
Filed: 1998-11-06
Granted: 2000-06-11
Abstract: This invention is an improvement on dielectric resonator. It is mainly to use an integrally-formed dielectric resonator made of a single microwave dielectric resonant material with a high dielectric constant and a low dielectric loss to replace the dielectric resonator made by combining a low-dielectric-constant supporting layer with a high-dielectric-constant resonant layer used in habitually-used microwave electric circuits. A short cylindrical or barrel-type protrusion is disposed on the dielectric resonator to support the resonator on the microwave substrate. With this improvement, the electromagnetic deflection due to different materials in the habitually-used dielectric resonator can be prevented thus the resonance effect of the resonator can be improved. The difficulty of positioning and adhering different materials on the same axis during manufacturing of habitually-used dielectric resonators can also be eliminated. With identical shapes, it provides a better resonance effect than the traditional dielectric resonator, and reduces production cost.
Patent TW-405087-B (TW)
Title: Multiple datapath processor with a three-input adder
Inventor: ALIDINA MAZHAR M
IPC: G06F7/00
Filed: 1998-11-18
Granted: 2000-09-11
Abstract: There is disclosed a processor including at least two multiply-accumulate data paths (24, 26; 28, 30). Each multiply-accumulate data path has at least one multiplier (24 or 28) and at least one adder (26 or 30). At least one of the adders (30) in at least one of the multiply-accumulate data paths is a three-input adder.
Patent TW-430882-B (TW)
Title: Plasma film forming method
Inventor: NAKASE RISA
IPC: C23C16/26
Filed: 1998-11-19
Granted: 2001-04-21
Abstract: In a case where a CF film is used as an interlayer insulator film for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450 DEG C. At this time, a F gas is emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, the thermostability is enhanced. A compound gas of C and F, e.g., C4F8 gas, a hydrocarbon gas, e.g., C2H4 gas, and CO gas are used as thin film deposition gases. These gases are activated as plasma to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400 DEG C using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that the thermostability is improved.
Patent TW-396590-B (TW)
Title: Amplified photoelectric transducer, amplified solid-state image sensor and method for driving amplified photoelectric transducer
Inventor: WATANABE TAKASHI
IPC: H04N5/335
Filed: 1998-12-02
Granted: 2000-07-01
Abstract: An amplified photoelectric transducer of the present invention includes: a photoelectric transducer section for photoelectrically transducing incident light into an electric signal; a first MOS transistor for amplifying the electric signal; a second MOS transistor for resetting the photoelectric transducer section; and a third MOS transistor for reading out to a signal line the amplified electric signal. The photoelectric transducer section includes a signal charge storage stection for storing a charge corresponding to the electric signal and a potential change detection section for detecting a potential change of the electric signal. The amplified photoelectric transducer further includes a fourth MOS transistor for switching the potential of the potential change detection section to a semiconductor substrate potential in response to an operation of the third MOS transistor.
Patent TW-408548-B (TW)
Title: A method and an arrangement for securing an ADSL connection
Inventor: BARKARO STEFAN
IPC: H04M11/06
Filed: 1998-12-11
Granted: 2000-10-11
Abstract: To secure an ADSL connection to an ADSL transceiver (4) connected to a telephone line (2, 3) to be used also by an associated telephone (1), the telephone (1) is normally kept disconnected form the telephone line (2, 3), and a predetermined number of bits is allocated to the ADSL connection. Upon an off-hook condition of the telephone (1) in connection with an outgoing call, and upon a presence of a ringing signal on the telephone line (2, 3) or an off-hook condition of the telephone (1) in connection with an incoming call, a predetermined lower number of bits is allocated to the ADSL connection before the telephone (1) is connected to the telephone line (2, 3).
Patent TW-412439-B (TW)
Title: An activated clay for treating aromatic hydrocarbons
Inventor: IMAI KIYOHIKO
IPC: C07C7/12
Filed: 1998-12-11
Granted: 2000-11-21
Abstract: The present invention provides an activated clay for refining aromatic hydrocarbons such as BTX (benzene, toluene, xylene), etc., satisfying the requirements of both excellent life and excellent side-reaction-preventing property. The activated clay for treating aromatic hydrocarbons is obtained by treating dioctahedral smectite clay minerals with an acid so as to possess a BET specific surface area of not smaller than 250 m<2>/g and to contain iron in an amount of not smaller than 2.5% by weight reckoned as an Fe2O3 oxide.
Patent TW-466284-B (TW)
Title: Lint-free wiper
Inventor: HIRAGA SATOSHI
IPC: A47L13/16
Filed: 1999-01-19
Granted: 2001-12-01
Abstract: A line-free wiper comprises essentially a fabric composed of a fabric construction having an edge formed substantially of loops of yarns constituting the fabric. The fabric is suitably a knitted fabric. The lint-free wiper can be of any shape produced by knitting a chemical or synthetic fiber yarn, preferably in the form of a multifilaments yarn on a conventional weft knitting machine such as weft knitting machine and circular knitting. Since the lint-free wiper according to the invention are formed of a fabric having the above-mentioned fabric construction, the wiper contains no cut lines of the fabric and fewer cut end of yarns. This reduce the generation of particulate contaminant, for example lint and debris of fiber in the wiper. Accordingly, the lint-free wiper of the invention can refrain from generation of particulate contamination, and provides a wiper for use in cleanrooms controlled in a high cleanliness rating of less than class 100. This wiper has no need to apply the edge treatment process (i.e., heat-cut or a fusing or adhesive technique for fiber-bonding). Accordingly, the invention can provide an excellent lint-free wiper of cellulosic fiber which is non-thermoplastic fiber as well as a soft lint-free wiper having an excellent wiping performance.
Patent TW-432588-B (TW)
Title: The manufacturing method of the semiconductor integrated circuit
Inventor: UCHIDA TETSUYA
IPC: H01L27/092
Filed: 1999-03-29
Granted: 2001-05-01
Abstract: A manufacturing method is disclosed in which the process for injecting the ion into the buried extension layer for forming the triple wells, and the process for etching the oxide film for forming two kind of gate oxide film with different thickness on one chip, can be performed in one PR, by which the cost can be down, and the circuit operation speed can be fasten by make the gate oxide film of the peripheral circuit thinner than the gate oxide film of the I/O circuit. The constructor of the present invention comprises forming the buried N layer on the P type silicon substrate, and at the portion to be making the gate oxide film thicker, the register mask formed on the silicon oxide film is formed on the gate forming portion with a predetermined width, injecting the ion with a predetermined energy over the register mask for forming the buried N type layer, the N type layer is formed under the register mask within a predetermined range. By using the register mask, the gate oxide film is formed by etching and removing the oxide film.
Patent TW-518346-B (TW)
Title: Polyphenols of glyoxal and phenol and epoxidized derivatives thereof with improved optical properties
Inventor: GERBER ARTHUR H
IPC: C08L61/10
Filed: 1999-04-26
Granted: 2003-01-21
Abstract: The specification discloses a method for the manufacture of a fluorescent polyphenolic product with high UV absorbance, its subsequent epoxidation as well as polyphenolic products and epoxidized derivatives and compositions thereof. The polyphenolic products are prepared by heating glyoxal at a temperature of about 80 DEG C to about 100 DEG C with a molar excess of a phenol in the presence of an acidic catalyst which is eliminated from the reaction mixture at a temperature below about 170 DEG C. The total mole ratio of glyoxal to phenol charged to the reaction mixture is about 0.15 to 0.22 moles of glyoxal for each mole of phenol. The glyoxal is added continuously or by stepwise additions to the phenol so as to keep the aldehyde units in the reaction mixture to less than about 70% of the aldehyde units in the total quantity of glyoxal to be charged for making the polyphenol. Water is distilled stepwise or continuously from the reaction mixture. The catalyst is removed from the reaction mixture by further distilling the reaction mixture, generally at higher temperatures. After removal of the catalyst, unreacted phenol is removed by distillation and the reaction mixture is heated at a temperature of about 175 DEG C to 200 DEG C for about 0.25 hours to about 3 hours to produce a polyphenolic reaction product having high fluorescence, high UV absorbance and high solubility in organic solvents. The polyphenolic reaction product can be epoxidized by conventional means and such epoxy products used in the manufacture of laminates, coatings and adhesives.
Patent TW-589197-B (TW)
Title: Stabilized antihistamine syrup
Inventor: MUNAYYER FARAH J
IPC: A61K31/445
Filed: 1999-05-27
Granted: 2004-06-01
Abstract: An antihistaminic syrup is stabilized against degradation of the active ingredient, by the addition of and about 0.05 to about 5 mg/mL of an aminopolycarboxylic acid such as a salt of ethylenediaminetetraacetic acid.
Patent TW-476800-B (TW)
Title: SBTN ferroelectric thin film and method for producing same
Inventor: TZENG JIUN-YUAN
IPC: C23C14/34
Filed: 1999-06-03
Granted: 2002-02-21
Abstract: A novel SBTN (SraBibTacNbdOx) thin film which exhibits satisfactory ferroelectric properties is disclosed, wherein a lies between 0.5 and 1, b lies between 2 and 2.7, c lies between 1 and 1.4, d lies between 0.6 and 1.1 and x lies between 8 and 10. The composition of Sr0.8Bi2.5Ta1.2Nb0.9Ox wherein x lies between 9 and 10 is preferred. The Sr0.8Bi2.5Ta1.2Nb0.9Ox thin film is formed by two-target off-axis RF magnetron sputtering at a temperature down to about 600 DEG C. One target is form of Sr0.8Bi2.2Ta1.2Nb0.8O9, and the other target is formed of Bi2O3.
Patent TW-457602-B (TW)
Title: Flip chip metallization
Inventor: DEGANI YINON
IPC: H01L23/485
Filed: 1999-08-17
Granted: 2001-10-01
Abstract: The specification describes techniques for applying under bump metallization (UBM) for solder bump interconnections on IC chips with AI bonding sites. The UBM of the invention comprises a copper layer applied directly to the aluminum bonding sites. Reliable bonds are obtained if the AI surface is a nascent surface. Such a surface can be provided by back sputtering an aluminum bonding site, or by a freshly sputtered aluminum layer. The copper layer is deposited on the nascent aluminum surface in e.g. a cluster tool without breaking vacuum. The UBM can be patterned using subtractive techniques.
Patent TW-442306-B (TW)
Title: Apparatus and method for maintaining and/or restoring viability of organs
Inventor: OWEN DONALD R
IPC: A61J3/00
Filed: 1999-09-29
Granted: 2001-06-23
Abstract: An organ perfusion apparatus and method for monitoring, sustaining and/or restoring the viability of the organ and for preserving the organ for storage and/or transport perfuse the organ at normothermic temperatures (normothermic perfusion mode), preferably prior to and followed by organ perfusion at hypothermic temperatures (hypothermic perfusion mode) for transport and/or storage of the organ. The restoring of organ viability is accomplished by restoring high energy nucleotide (e.g., ATP) levels in the organ, which were reduced by warm ischemia time, by perfusing the organ with a medical fluid, such as an oxygenated cross-linked hemoglobin-based bicarbonate medical fluid, at normothermic temperatures. In the normothermic perfusion mode, organ perfusion pressure is preferably controlled in response to a sensor disposed in an end of tubing placed in the organ, by a pneumatically pressurized medical fluid reservoir which may be used in combination with a stepping motor/cam valve which provides for perfusion pressure fine tuning, preventing overpressurization and providing emergency flow cut-off. In the hypothermic mode, the organ is perfused with a medical fluid, preferably a simple crystalloid solution augmented with antioxidants, intermittently or at a slow continuous flow rate. The medical fluid may be fed into the organ by gravity from an intermediary tank which has a low pressure head so overpressurization of the organ is avoided. In either mode, preventing overpressurization prevents and/or reduces damage to the vascular endothelial lining and to the organ tissue in general. Also, viability of the organ may be automatically monitored in either mode, preferably by monitoring fluid characteristics of the medical fluid that has been perfused through the organ, such fluid characteristics being indicative of organ viability. The perfusion process can be automatically controlled using a control program.
Patent TW-471077-B (TW)
Title: Bump forming method, bump forming bonding tool, semiconductor wafer, semiconductor chip, semiconductor device, manufacture thereof, circuit board and electronic machine
Inventor: KOYAMA YUGO
IPC: H01L23/485
Filed: 1999-10-20
Granted: 2002-01-01
Abstract: Disclosed is a bump forming method, bump forming bonding tool, semiconductor wafer, semiconductor chip, semiconductor device, manufacture thereof, circuit board and electronic machine. A method of forming a bump comprises: a first step of bonding the tip portion 14 of a conductive wire 16 having a ball-shaped tip portion 14 to an electrode 12 by a first tool 20 so that a portion of the tip portion 14, positioned around a central portion 13 that leads to the conductive wire 6 and avoiding an outer peripheral portion 15, is pressed and plastically deformed by the first tool 20; a second step of tearing off the conductive wire 16 in such a manner that the tip portion 14 remains on the electrode 12; and a third step of pressing at least the central portion 13 of the tip portion 14 by a second tool 32 to cause plastic deformation.
Patent TW-418126-B (TW)
Title: A sheet fabrication center and methods therefor of optimally fabricating worksheets
Inventor: VIRTANEN MIKA
IPC: B30B1/40
Filed: 1999-10-21
Granted: 2001-01-11
Abstract: A method of determining the length of a tool means driven by a servo mechanism means for effecting work on a worksheet along a substantially vertical direction, comprising the steps of: (a) predefining a first distance separating said tool means with a die means; (b) driving said tool means towards said die means until said tool means comes into contact with said die means or a worksheet placed over said die means; (c) determining the force of said servo mechanism means when said tool means contacts said die means or said worksheet; and (d) correlating the length of said tool means with said force.