Patent EA-001815-B1 (EA)
Title: Substrate for ic crystals
Inventor: TARAN ALEXANDR IVANOVICH
IPC: H05K3/00
Filed: 1999-03-03
Abstract: 1. A substrate for IC crystals comprises a base made of a dielectric material with a system of oriented and fixed electroconductive tracks provided on said base and contacts, some of said contacts are used for connection to the corresponding contact pads of the crystal, while the other contacts are used for connection to the corresponding contacts of a switching plate, characterized in that said contacts for connection to the corresponding contact pads of the crystal, and the other contacts for connection to the corresponding contacts of a switching plate are made in the form of metallized openings, the upper edges of which are connected to the electroconductive tracks provided on the upper surface of the substrate base, and the lower edges of openings form contact nodes providing, together with the electroconductive tracks, the electrical connection of the crystal contact pads with the contact pads of the switching plate at the splice with the counterpart contact pads or with the counterpart contact pads of the switching plate filled with an electroconductive binder material. 2. The substrate for IC crystals as claimed in claim 1, characterized in that the metallized openings forming contact nodes with the crystal contact pads and the contact pads of the multilayered switching plate are made of different diameter. 3. The substrate for IC crystals as claimed in claim 1, characterized in that the metallized openings are made in the form of a cylinder. 4. The substrate for IC crystals as claimed in claim 1, characterized in that the metallized openings are made in the form of truncated cones, wherein lesser bases of the truncated cones face the contact pads provided on the crystal surface or the multilayered switching plate, and the bigger bases of said truncated cones are connected to the electroconductive tracks provided on the surface of the substrate base. 5. The substrate for IC crystals as claimed in claim 1, characterized in that upper edges of the metallized openings, connected to the the electroconductive tracks provided on the upper surface of the substrate base. 6. The substrate for IC crystals as claimed in claim 1, characterized in that the metallized openings for connection with the contact pads of the multilayered switching plate are made with metallized rims on the upper and lower surfaces of the substrate base. 7. The substrate for IC crystals as claimed in claim 1, characterized in that the substrate base is made of polyimide film. 8. The substrate for IC crystals as claimed in claim 1, characterized in that the metallized openings in the substrate for the crystal contact pads are made in the form of a matrix arranged above all crystal surface, the contact pads of which are arranged similar to the matrix of the substrate openings. 9. The substrate for IC crystals as claimed in claim 1, characterized in that the substrate is a multilayer structure. 10. The substrate for IC crystals as claimed in claim 9, characterized in that the electroconductive tracks, connecting the crystal contact pads to the metallized openings on the periphery of the multilayered substrate, are made in the form of a strip line. 11. The substrate for IC crystals as claimed in claim 9, characterized in that a plurality of IC crystals are arranged on one substrate.