baber/WOPTO huggingface dataset:
Patent TW-364267-B (TW)
Title: System and process for delivering digital data on demand
Inventor: WANG PONG-SHENG
IPC: H04N7/173
Filed: 1997-08-05
Granted: 1999-07-11
Abstract: A video server system and method has a modular and expandable system design to deliver a plurality of video streams on user demand and under user control. The video server system and method has a central control module adapted to receive control commands such as SELECT, PLAY, REWIND, PAUSE etc. to select and playback a video from a plurality of videos stored in a storage module. The central control module is a computer motherboard having a first small computer serial interface (SCSI) coupled to storage device. The central control module also has memory for buffering data blocks of video retrieved from the storage device or devices prior to delivery to the delivery module also included in the system. The delivery module is also a computer motherboard having memory and also having a plurality of video processors for processing the video data prior to coupling the data to a client location. The delivery module additionally has a SCSI interface configured to operate in a target mode so that the central control module transfers video data to the delivery module in the same manner that it would use if it were writing to a conventional SCSI disk drive.
Patent TW-426621-B (TW)
Title: Clipless bicycle pedal
Inventor: HEIM JONATHAN R
IPC: B62M3/08
Filed: 1997-10-29
Granted: 2001-03-21
Abstract: The present invention is a clipless pedal system for bicycles. Structurally, the present invention includes a pedal platform and two cleat retainers. The cleat retainers have hooked ends and are held against opposite sides of the pedal platform. A resilient loop encircles the pedal platform, holding the cleat retainers against the pedal platform. The ends of the cleat retainer may pivot away from the pedal platform by elastic deformation of the loop, allowing insertion of a cleat attached to a cycling shoe.
Patent TW-429246-B (TW)
Title: Preparation of diaryl carbonate
Inventor: HARADA KATSUMASA
IPC: C07C68/00
Filed: 1997-10-04
Granted: 2001-04-11
Abstract: An improved process for preparing a diaryl carbonate from a diaryl oxalate in a liquid phase by decarbonylation utilizes a reaction vessel composed of two or more reaction chambers which are connected in series. The process is composed of the steps of continuously introducing the diaryl oxalate and an organic phosphorus compound having a trivalent or pentavalent phosphorus atom and at least one carbon-phosphorus bonding into the first chamber and continuously recovering a reaction mixture mainly containing the diaryl carbonate from the last chamber under the condition that a mixture of the diaryl oxalate and the organic phosphorus compound is heated in the reaction chambers, while discharging carbon monoxide released from the mixture.
Patent TW-357251-B (TW)
Title: Heat exchanging unit, heat exchanging unit assembly and thermoelectric refrigeration system each accommodating a thermoelectric module
Inventor: NAKAGAWA OSAMU
IPC: F28F13/12
Filed: 1997-11-07
Granted: 1999-05-01
Abstract: A sort of built-in thermoelectric heat exchange module, including: at least 2 thermal transmission faces, being heated when passing current at one thermal heating face and the other end being cooled as a thermoelectric module; and at least the thermal transmission face coating one end of the thermoelectric module, with a casing formed between the thrmal transmission faces for pasxsage of the thermal media, said casing being transparent or semi transparent.
Patent TW-392346-B (TW)
Title: Trench floating gate structure for EEPROM
Inventor: CHEN JUNG
IPC: H01L27/115
Filed: 1998-05-15
Granted: 2000-06-01
Abstract: A trench floating gate structure for EEPROM comprises: a trench floating gate which partly located in the semiconductor substrate; and a thin gate oxide whose surface contacts the bottom of trench floating gate. Furthermore, a first ion implantation area is located below the trench floating gate and employs the thin gate oxide for the electric coupling to trench floating gate. A second ion implantation area employs tunneling effect and generates electric coupling to trench floating gate through a tunneling oxide that is used to store or release electrons so as to turn on or off the transistors controlled by the trench floating gates.
Patent TW-448099-B (TW)
Title: A jointing apparatus of thermo plastic pipes
Inventor: NOMURA HIROKAZU
IPC: B29C65/06
Filed: 1998-05-26
Granted: 2001-08-01
Abstract: An orbital vibration generator means comprising, in addition to a clamp 4, 5 for holding a pair of thermo plastic pipes coaxially and a pressurizing means 2, 3, 14 for bringing into contact under a pressure junction end faces of a pair of thermo plastic pipes 10, 11 held by these clamps, a crank shaft 8 having a shaft portion 8a and a crank portion 8b in which the axes of these shaft portion 8a and crank portion 8b are eccentric, a motor 6 for giving rotation to the crank shaft 8, a bearing 9 attached to the crank portion 8b of said crank shaft 8, and a orbital vibration clamp 13 holding pipe an end portion of a thermo plastic pipe, formed integrally with the outer ring of the bearing 9 to move integrally with said bearing.
Patent TW-528604-B (TW)
Title: MCC: alginate pharmaceutical suspensions
Inventor: SELINGER EDWARD
IPC: A61K31/167
Filed: 1998-06-04
Granted: 2003-04-21
Abstract: Novel pharmaceutical suspensions comprising a pharmaceutically active ingredient suspended in aqueous media with a suspending agent comprising attrited microcrystalline cellulose coprocessed and at least partially surface coated with a calcium sodium alginate salt complex barrier dispersant and readily dispersible and hydratable dry formulations thereof are described and exemplified.
Patent TW-436410-B (TW)
Title: Polytetrafluoroethylene tube, a process for producing the same and extrusion apparatus therefor
Inventor: UCHIDA TATSURO
IPC: B29C48/475
Filed: 1998-08-15
Granted: 2001-05-28
Abstract: An extruder for producing polytetrafluoroethylene tubing having a minimized thickness deviation, comprising a core pin (30) and a die orifice (50) surrounding the core pin (30), in which the core pin (30) bears an end (34) of connection with a mandrel and an outlet end (36) located in the outlet of the die orifice (50) and the core pin (30) has between the ends (34 and 36) a portion whose section perpendicular to the axial direction of the core pin (30) has a smaller area than those of the sections at the ends (34 and 36). Tubing having a thickness deviation of 15% or below can be obtained by extruding pasty polytetrafluoroethylene through the circular gap formed by the core pin (30) and the die orifice (50).
Patent TW-379456-B (TW)
Title: Method for improving bump in first pixel output resulting from the CMOS image sensor manufacturing
Inventor: JUO MAU-SHING
IPC: H01L31/14
Filed: 1998-08-24
Granted: 2000-01-11
Abstract: The invention relates to a method for improving bump in first pixel output in the CMOS image sensor manufacture by increasing the length of a field oxide layer located in an element region and a cutting path region interface, so that part of the field oxide region would be located in the cutting channel, a dielectric layer on top of the cutting channel will not be etched.
Patent TW-374025-B (TW)
Title: A pot for making mineral water
Inventor: OGAWA TOSHIAKI
IPC: C02F1/68
Filed: 1998-09-14
Granted: 1999-11-11
Abstract: A pot for making mineral water driving a pump part at circulating system for circulating water in a pot. At this time, the water is circulating through a mineral cartridge to dissolve mineral component of a water improving compound. The pot for making mineral water stops circulating water in the pot when the pump part stops driving, at this time, the lowest of the water improving compound within the mineral cartridge is upper above the surface of the water in the pot, so the water improving compound is separated from the water in the pot to control under selected thickens of mineral component of the water in the pot.
Patent TW-387051-B (TW)
Title: Variable air volume control system
Inventor: BUJAK JR WALTER E
IPC: F24F11/00
Filed: 1998-10-28
Granted: 2000-04-11
Abstract: A system controls the pressure at which conditioned is to be provided to one or more zones to be heatd or cooled b the conditioned air. The system actively computes a setpoint for the pressure with a location in a duct system upstream of where any of the conditioned air is to be provdied to the zones. The setpoint is computed as a function of the positional statuses of dampers within the duct system that regulate the flow of the conditioned air to the respective zones. The actively computed setpoint is compared with a sensed pressure in the duct system in order to determine whether the pressure in the duct system needs to be changed.
Patent TW-398137-B (TW)
Title: The discrimination circuit between receiving signals and its method
Inventor: KIM KI-BUM
IPC: H04N5/44
Filed: 1998-12-10
Granted: 2000-07-11
Abstract: This invention is the discrimination circuit used for receiving signals and its method. This circuit is composed of a detector to detect the peak value signal depending upon the correlation between the receiving signal and reference signal. It also contains the generator to generate the discriminating signal. While the peak value is detected in the predetermined period, high resolution signal is indicated. If the peak value signal is not detected in the period, it will indicate these receiving signals as analog broadcasting signal. Therefore, whether the selected channel-receiving signal is high resolution digital signal or an analog broadcast signal can be automatically determined. This invention could prevent the receiver from wrong operation.
Patent TW-447079-B (TW)
Title: Semiconductor element and its manufacturing method
Inventor: HUBNER HOLGER
IPC: H01L21/768
Filed: 1999-03-16
Granted: 2001-07-21
Abstract: A semiconductor element (5) is provided with a material-intensified contact-region (40) of a metal-layer. Such a contact-region (40) is formed together from a second metal-region (45) of a first metal-layer and from a 4th metal-region (50) of a second and to-be-contacted metal-layer. Thus the contact-region (40) has at least a double material-strength relative to each metal-layer, and can prevent an etching in the formation of a contact-hole (65) to contact said metal-layer.
Patent TW-468075-B (TW)
Title: Thin film forming method, display device, and color filter
Inventor: YUDASAKA ICHIO
IPC: C30B29/64
Filed: 1999-03-17
Granted: 2001-12-11
Abstract: The thin film formation method of the present invention forms barriers 110 where affinity barrier layers and non-affinity barrier layers are alternately layered by repeating a process of forming an affinity barrier layer 111-11n with a material having affinity for a thin film material solution 130 (such inorganic material as SiO2), and a process of forming a non-affinity barrier layer 121-12n with a material having non-affinity for the thin film material solution 130 (such organic material as resist) one or more times. Finally the thin film material solution 130 is filled between barriers by an ink jet method, heat treatment is executed, and a thin film layer 131-13n is sequentially layered. By these steps, cost required for affinity control can be decreased and forming multi-layer thin films with uniform film thickness becomes possible.
Patent TW-511329-B (TW)
Title: Self-biased microwave low noise amplifier
Inventor: SHIU YUNG-JEN
IPC: H03F1/26
Filed: 1999-04-20
Granted: 2002-11-21
Abstract: The present invention proposes a self-biased microwave low-noise amplifier that includes an inverter having an input terminal and an output terminal for receiving input signal and providing output signal, respectively; an inductor connected between the input terminal and output terminal; and a capacitor connected in parallel with the inductor. In the invention, the transferring characteristic curve of the inverter is used for the amplification of the input signal. In addition, an inductor is connected to the output terminal and the input terminal of the inverter so as to make the inverter have a stable DC bias voltage. By adjusting the inductance value and the quality factor of the inductor, the amplifier thus operates with the expected frequency and the frequency bandwidth.
Patent TW-581787-B (TW)
Title: Hydrogenated block copolymer and polypropylene resin composition containing the same
Inventor: YONEZAWA JUN
IPC: C08L23/10
Filed: 1999-06-03
Granted: 2004-04-01
Abstract: A hydrogenated block copolymer comprising: two polymer blocks A mainly comprising vinylaromatic hydrocarbon compound monomer units; and one hydrogenated polymer block B mainly comprising butadiene monomer units, in which at least 90% of olefinically unsaturated double bonds contained in a polymer block mainly comprising butadiene monomer units before hydrogenation have been hydrogenated, wherein a bonding vinylaromatic hydrocarbon compound content in the hydrogenated block copolymer is higher than 13 wt% but lower than 25 wt%, a 1,2-bond content in the unhydrogenated polymer block mainly comprising butadiene monomer units is higher than 40 mol% but lower than 60 mol%, and the copolymer has a quantity of heat of crystal fusion (DeltaH) smaller than 0.05 J/g, an order-disorder transition temperature of 200 DEG C or higher, and a melt flow rate (MFR) value, as determined in accordance with JIS K7210 under the conditions of a temperature of 230 DEG C and a load of 2.16 kg, of from not smaller than 0.1 g/10 min to smaller than 30 g/10 min. By incorporating the copolymer into a polypropylene resin, a composition which is suitable for giving a molded article having an excellent balance among impact resistance, brittle temperature, rigidity, heat distortion resistance, and tensile elongation at break, can be obtained.
Patent TW-419735-B (TW)
Title: Method and apparatus for improved semiconductor wafer polishing
Inventor: CESNA JOSEPH V
IPC: B24B37/04
Filed: 1999-06-17
Granted: 2001-01-21
Abstract: In semiconductor wafer polishing, a backing pad is sized smaller than the wafer being polished so as to produce a desired backset, allowing the wafer to bend, thereby reducing over-polish at the wafer edge.
Patent TW-462132-B (TW)
Title: Single electron field effect transistor and method for making the same
Inventor: HU SHU-FEN
IPC: H01L29/772
Filed: 1999-07-23
Granted: 2001-11-01
Abstract: The present invention discloses a quantum dot or a floating gate of a single electron field effect transistor made from a nanometer void material and a method for making the same. The present invention uses a conventional integrated circuit process, together with the water heating method and ion exchange method, to produce a nanometer void material, and uses a spin coating and lift off or a chemical mechanical polishing (CMP) to deposit this material on a specific location, to break through the limitation of current photolithography process, thereby producing a single electron field effect transistor having a source, a drain, a gate, and a quantum dot or a floating gate that can be used in room temperature.
Patent TW-425814-B (TW)
Title: Image transmission method and image transmission device for the same
Inventor: TSUZUKI KENGO
IPC: G06T1/60
Filed: 1999-07-30
Granted: 2001-03-11
Abstract: The object of the present invention is to provide an image transmission method and image transmission device for the same which can configure the specific minimum unit of the effective area from the image transmission by the camera and the specific minimum unit for specifying the dimension of effective area as independent values. Because the invention can configure the specific minimum unit (C, D) for determining the dimension of image area to be transmitted (refer to effective area hereinafter) with different values from the value of the specific minimum unit (I, J) for deciding the position of effective area; therefore, while the specific minimum unit for specifying the position of the effective area or the specific minimum unit of any one in the specific minimum unit for specifying the dimension of effective area are limited, the limitation will not effect one another.
Patent TW-455536-B (TW)
Title: Method for forming a pattern similar to broken glasses on the surface of an acrylic product
Inventor: CHEN HAN-CHIN
IPC: B29C59/00
Filed: 1999-09-13
Granted: 2001-09-21
Abstract: The present invention provides a method for forming a pattern similar to broken glasses on the surface of an acrylic product, which comprises quenching a highly volatile solution on the surface of an acrylic product kept at a uniform temperature to generate a vigorous alternations of cold/hot on the surface thereof so that the surface of the product can generate a pattern similar to broken glasses. Furthermore, the depth of the pattern is about 0.5 mm which will not damage the structural safety of the product so that an ordinary decoration or a dining ware can have a versatile pattern while maintaining the required safety.
Patent TW-426987-B (TW)
Title: Fabrication method of metal oxide semiconductor with double diffused drain
Inventor: WU TSUNG-JR
IPC: H01L23/60
Filed: 1999-09-20
Granted: 2001-03-21
Abstract: This invention provides the fabrication method of metal oxide semiconductor with double diffused drain which is used in the electrostatic discharge protection circuit of the stacked dynamic random access memory. The number of mask required is not increased and only one time of required ion implantation procedure is increased to form the electrostatic discharge protection circuit in which the double diffused drain metal oxide semiconductor is used. Therefore, the electrostatic discharge protection capability of the electrostatic discharge protection circuit can be enhanced.
Patent TW-498183-B (TW)
Title: A projection-microlithographic device
Inventor: VON BUENAU RUDOLF
IPC: H01L21/027
Filed: 1999-11-29
Granted: 2002-08-11
Abstract: In a manner known per se, the illuminating device of a projection-microlithographic device comprises, in addition to a light source and an objective, a device which produces a particular image field configuration. This image field configuration preferably fulfills the following conditions: on the one hand it comprises fields (1-4) which, in the direction of the scanning movement (y-direction), are separated from one another at least in parts by a free zone, and which are located in a peripheral zone of the circular image field (5) of the downstream projection objective in a manner at least roughly approximating rotation symmetry. Further, the integral of the quantity of light passing through the fields (1 to 4) in the scanning direction must be constant over the entire extent of the image field configuration in the direction at right angles to the scanning direction. With an equivalent exposure effect, such an image field configuration (1 to 4) replaces a conventional rectangular scanner slot formation whose width in the scanning direction corresponds to the forementioned integral in the case of the image field configuration according to the invention. However, the design of the image field configuration according to the invention permits an approximately rotationally-symmetric illumination of the projection objective, so that non-rotationally-symmetric, radiation-induced imaging errors of the objective occur only to a reduced extent.
Patent TW-490878-B (TW)
Title: Resonator, filter, duplexer, and communication device
Inventor: HIDAKA SEIJI
IPC: H01P7/08
Filed: 1999-12-06
Granted: 2002-06-11
Abstract: A resonator can provide good loss characteristics by effectively suppressing power losses due to an edge effect. In addition, a filter, a duplexer, and a communication device incorporating the resonator are formed. In the resonator, a plurality of spiral lines are disposed on a surface of a dielectric substrate in such a manner that the two ends of the lines are aligned on the perimeter around a central point on the substrate so that the lines do not cross each other. With this arrangement, the edge portions of the spiral lines are substantially canceled, by which power losses due to the edge effect can be effectively suppressed.
Patent TW-595055-B (TW)
Title: Universal serial bus connector with an integral over-current protection device and indicator
Inventor: JATOU ROSS
IPC: H01R13/66
Filed: 2000-04-29
Granted: 2004-06-21
Abstract: A universal serial bus connector is arranged to include in-line over-current protection components by dividing horizontal sections of the universal serial bus connector power lines or contacts into vertically offset front and rear contact sections having a predetermined distance therebetween to provide a space into which the over-current protection components can be positioned, the space being narrower than the height of the protection device so that a good electrical connection is established when the protection device is inserted between the contact sections. The connector may also include at least one LED connected to one of the front contact sections between the protection device and a mating end of the front contact section to provide an immediate visual indication of whether an over-current has occurred.
Patent TW-459234-B (TW)
Title: Semiconductor memory device
Inventor: MORIKAWA YOSHINAO
IPC: G11C16/06
Filed: 2000-02-14
Granted: 2001-10-11
Abstract: A semiconductor memory device includes a plurality of bit lines; a plurality of virtual GND lines; and a plurality of memory cell transistors arranged in an array. The plurality of bit lines includes a selected bit line directly connected to a memory cell transistor to be read among the plurality of memory cell transistors and a non-selected bit line. The plurality of virtual GND lines includes a selected virtual GND line directly connected to the memory cell transistor to be read and a non-selected virtual GND line. The non-selected bit lines include a charge non-selected bit line to be charged and a non-selected dummy bit line to be grounded. The non-selected virtual GND lines include a charge non-selected virtual GND line to be charged. The non-selected dummy bit line is connected between the selected virtual GND line and one of the charge non-selected bit line and the charge non-selected virtual GND line.
Patent TW-544483-B (TW)
Title: Device for facilitating the removal of formwork
Inventor: BUTIGIEG JOHNNY
IPC: E02D5/18
Filed: 2000-05-30
Granted: 2003-08-01
Abstract: The invention relates to a device for facilitating the removal of formwork (12) for the end joint of a diaphragm wall panel, said formwork comprising a soleplate (14) having two side edges. The device is characterized in that it comprises: two substantially rectangular plates (60, 62) of substantially the same dimensions; spacer means (64) secured to first longitudinal edges of each of said plates to hold them substantially parallel to each other at a spacing h; filler means (66) for filling the volume defined by said plates, the spacer means, and a plane orthogonal to said plates located at a distance d from the second longitudinal edges of the plates; and temporary fixing means for fixing said plates to said soleplate.
Patent TW-I237715-B (TW)
Title: Liquid crystal display element and method of manufacturing the same
Inventor: SHIMIZU HIDEHISA
IPC: G02F1/1343
Filed: 2000-04-18
Granted: 2005-08-11
Abstract: To provide a liquid crystal display element of a novel structure having a wide viewing angle and high contrast over the viewing angle, and a method of manufacturing the same. The liquid crystal display element comprises a first substrate 3, a second substrate 4 paired with the first substrate 3, a liquid crystal layer 5 interposed between the first substrate 3 and the second substrate 4, and a switching electrode comprising a first comb-shaped electrode 1 and a second comb-shaped electrode 2. Preferably, a first domain 6 and a second domain 7, which are preferably symmetrically polarized about a center line X between opposing electrodes, are formed between a tooth 1-1 of the first comb-shaped electrode 1 and a tooth 2-1 of the second comb-shaped electrode 2 constituting the opposing electrodes of the switching electrode.