Patent SG-11201907516Q-A (SG)
Title: Schottky contact structure for semiconductor devices and method for forming such schottky contact structure
Inventor: TABATABAIE-ALAVI KAMAL
IPC: H01L29/778
Filed: 2018-03-06
Abstract: International Patent Classification: 01854 (US). MACDONALD, Christopher, J.; 206 Cen- HO1L 2 9 / 4 7 (2006.01) H01 L 29/20 (2006.01) tral Avendue, Medford, Massachusetts 02155 (US). HOlL 29/778 (2006.01) (74) Agent: MOFFORD, Donald, F. et al.; Daly, Crowley, (21) International Application Number: Mofford & Durkee, LLP, 354A Turnpike St., Suite 301A, PCT/US2018/021040 Canton, Massachusetts 02021 (US). (22) International Filing Date: 06 March 2018 (06.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/452,986 08 March 2017 (08.03.2017) US (71) Applicant: RAYTHEON COMPANY [US/US]; 870 Winter Street, Waltham, Massachusetts 02451-1449 (US). (72) Inventors: TABATABAIE-ALAVI, Kamal; 651 Mas- sapoag Avenue, Sharon, Massachusetts 02067 (US). CHENG, Kezia; 73 Kelley Circle, Lowell, Massachusetts (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, Electrode 22 18 10 Stack 3 .( Stack 2 { Stack 1 A Au L • wi 4 , . 7 \ A P7WWWWS Source 50 •••••• • • • -it- 20 FIG. 2 Substrate Strueture 12 • SiN„ (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 13 September 2018 (13.09.2018) WIP0 I PCT Imimimo 1E1 oio VIII °nolo Oil woo VIII mimio imio (10) International Publication Number WO 2018/165088 Al (54) Title: SCHOTTKY CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICES AND METHOD FOR FORMING SUCH SCHOTTKY CONTACT STRUCTURE 00 Il() (57) : A Schottky contact structure (18) for a semiconductor device (10) having a Schottky contact (20) and an electrode (22) for the contact structure disposed on the contact. The Schottky contact comprises: a first layer (24) of a first metal in Schottky contact 1-1 —. with a semiconductor; a second layer (26) of a second metal on the first layer; a third layer (28) of the first metal on the second layer; and a fourth layer (30) of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky 1-1 contact comprises a third metal (22), the second metal providing a barrier against migration between the third metal and the first metal. N C [Continued on next page] WO 2018/165088 Al MIDEDIMOMOIDEIREEMOMMEMINIIMMORMIS GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(11)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))