Patent SG-11201909850P-A (SG)
Title: Programming enhancement in self-selecting memory
Inventor: REDAELLI ANDREA
IPC: G11C13/00
Filed: 2018-04-19
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 01 November 2018 (01.11.2018) WIPO I PCT omit IIl °nolo of iflo oimIE (10) International Publication Number WO 2018/200312 Al (51) International Patent Classification: Gl1C 13/00 (2006.01) (21) International Application Number: PCT/US2018/028391 (22) International Filing Date: 19 April 2018 (19.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/582,329 28 April 2017 (28.04.2017) US (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). (72) Inventors: REDAELLI, Andrea; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). PIROVANO, Agostino; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). TOR- TORELLI, Innocenzo; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). PELLIZZER, Fabio; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). (74) Agent: HARRIS, Philip W.; Holland & Hart LLP, P.O. Box 11583, Salt Lake City, Utah 84147 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). (54) Title: PROGRAMMING ENHANCEMENT IN SELF-SELECTING MEMORY (57) : Methods, systems, and devices for programming en- hancement in memory cells are described. An asymmetrically shaped 05-a 205-b 205-c memory cell may enhance ion crowding at or near a particular elec- trode, which may be leveraged for accurately reading a stored value of 325 335 r 340-a the memory cell. Programming the memory cell may cause elements within the cell to separate, resulting in ion migration towards a particu- lar electrode. The migration may depend on the polarity of the cell and may create a high resistivity region and low resistivity region within 220-a 20-b 220-c the cell. The memory cell may be sensed by applying a voltage across the cell. The resulting current may then encounter the high resistivity region and low resistivity region, and the orientation of the regions may be representative of a first or a second logic state of the cell. 335-a 210-c 105-c 105-d 105-e FIG. 3 W O 20 18/ 2003 12 Al [Continued on next page] WO 2018/200312 Al MIDEDIMOMMIDEFIEHNOMMIDEMIHIMEMOIMIE Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(11)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))