baber/WOPTO huggingface dataset:
Patent TW-247295-B (TW)
Title: Process for producing polypropylene (PP) pearling synthetic paper
Inventor: LIN CHING-GUEY
IPC: B32B27/32
Filed: 1993-04-17
Granted: 1995-05-11
Abstract: A process for producing polypropylene (PP) pearling synthetic paper, which is characterized in using 100 PHR of polypropylene resin (melt flow index (MFI) of 2~6), and/or 0~30 PHR of propylene/ethylene copolymer resin, 0~20 PHR of low density polyethylene resin (MFI=0.3~40), 0~35 PHR of one or more inorganic fillers selected from sodium carbonate, talc, mica, clay, etc., 0~5 PHR of antistatic agent, 0~5 PHR of lubricant, and colorant, surface grinding-resistant agent, surface water absorbent, as the composition to be blended and calendered at 200~250 deg.c through 3-layer extruder to be extruded out at T-mold followed by chilling at chilling roll at 25~40 deg.C, followed by bi-axial extension machine which comprises longitudinal extension of 2~6 times at 120~135 deg.C, quenching, lateral extension of 5~12 times at 160~185 deg.C, quenching, corona treatment, surface coloring or modifier coating treatment, and winding.
Patent TW-247941-B (TW)
IPC: G02F1/19
Filed: 1993-11-11
Granted: 1995-05-21
Abstract: A liquid suspension for use in a light valve, comprising particles suspended in a liquid suspending medium comprising in whole or in part a liquid polymeric stabilizer that is effective to prevent agglomeration of said particles. <IMAGE>
Patent TW-231364-B (TW)
Title: Process for epitaxial common source or common drain semiconductor component
Inventor: SHYU JENG-TSONG
IPC: H01L21/334
Filed: 1994-02-28
Granted: 1994-10-01
Abstract: A process for epitaxial common source or common drain semiconductorcomponent includes: 1. forming field oxide on silicon substrate; 2. forming gate oxide and polysilicon separately on the top of siliconsubstrate diffusion area; 2. implanting P ion with lower density on the silicon substrate diffusionarea of polysilicon's periphery; 3. forming spacer on polysilicon's periphery; 4. removing the spacer of polysilicon's one side by etching; 5. removing the spacer area and polysilicon's surface on silicon substrate,then by selectively epitaxial grown way to connect the epitaxial layer ofsilicon substrate and polysilicon; 6. implanting Sb ion with high density on epitaxial layer for transformingto source and drain; By the above process a buried window connection structure is formedautomatically between the silicon substrate and polysilicon, which formscommon gate or common drain, and raising the height of drain and source tosolve the short channel problem.
Patent TW-360570-B (TW)
Title: Molten metal handling vessel and method of purifying molten metal in same
Inventor: CLARK MICHAEL ROBERT
IPC: B22D11/118
Filed: 1994-08-09
Granted: 1999-06-11
Abstract: The invention relates to a means of purifying molten metal in a vessel, e.g. a tundish wherein an active inclusion-removing covering powder layer may be used in a more cost-effective manner. Accordingly, the invention provides a method of purifying molten metal in a molten metal handling vessel (10, 10'), the vessel having an inlet region (A, A') and an outlet region (C, C') for the molten metal, characterised in that the vessel (10, 10') is divided to include a cleaning region (B, B') between the inlet region (A, A') and the outlet region (C, C') the molten metal (21, 21') is caused to flow from the inlet region (A, A') through the cleaning region (B, B') to the outlet region (C, C') and an active inclusion-removing covering powder layer (23, 23') is places on the surface (22, 22') of the molten metal (21, 21') in the cleaning region (B, B').
Patent TW-423068-B (TW)
Title: Washer and washing method
Inventor: KANNO ITARU
IPC: B08B3/02
Filed: 1995-06-12
Granted: 2001-02-21
Abstract: The present invention provides a device improved so that contaminants on a substrate can be effectively removed. This washer is provided with a jetting nozzle 11 for jetting droplets 21 toward a substrate 1. To the jetting nozzle 11, a liquid feeding means 23 and a gas feeding means 22 are connected. Inside the jetting nozzle 11, a mixing means for mixing liquid and gas fed into the jetting nozzle 11 to turn the liquid into droplets 21 is provided.
Patent TW-294804-B (TW)
Title: Print/hand-written Chinese/English form recognition method
Inventor: SHYU ING-SHYH
IPC: G06K9/74
Filed: 1995-10-30
Granted: 1997-01-01
Abstract: A form recognition method comprises of the following steps: (1) defining boundary of field including information; (2) defining information feature in the field; (3) defining character attribute in the field; (4) defining predicted position where character will be filled in the field.
Patent TW-360664-B (TW)
Title: Process for polymerising olefin in gas phase
Inventor: CHINH JEAN-CLAUDE
IPC: C08F2/00
Filed: 1996-02-14
Granted: 1999-06-11
Abstract: The present invention relates to a process for continuous gas-phase polymerization of olefin(s) in a fluidized and/or mechanically stirred bed reactor, comprising a stage of drawing off the polymer out of the reactor, wherein a portion of the bed is transferred into a lock hopper and is then isolated from the reactor in the lock hopper for a period of 5 to 120 seconds so that a substantial amount of the olefin(s) in the said portion polymerizes, before the polymer thus isolated in the said portion is discharged out of the lock hopper. The process advantageously reduces the amount of the gas drawn off with the polymer to be reduced into the reactor and improves the degassing of the polymer by the heat of the polymerization reaction during the isolation period in the lock hopper.
Patent TW-434240-B (TW)
Title: Aromatic compounds, preparation thereof and pharmaceutical composition comprising same
Inventor: BREAULT GLORIA ANNE
IPC: C07D213/80
Filed: 1996-06-12
Granted: 2001-05-16
Abstract: The invention relates to compounds of the formula I, (I) wherein: A is an optionally substituted ring system, provided that the -CH(R3)N(R2)B-R1 and -OR4 groups are positioned in a 1, 2 relationship to one another on ring carbon atoms and the ring atom positioned ortho to the OR4 linking group (and therefore in the 3-position relative to the -CHR3NR2-linking group) is not substituted: B is an optionally substituted ring system: R1 is positioned on ring B in a 1, 3 or 1, 4 relationship with the -CH(R3)N(R2)-linking group and is as defined in the specification. R2 is hydrogen, C1-6 alkyl, optionally substituted by hydroxy, cyano or trifluoromethyl, C2-6 alkenyl (provided the double bond is not in the 1-position), C2-6 alkynyl (provided the triple bond is not in the 1-position), phenyl C1-3 alkyl or pyridyl C1-3 alkyl; R3 is hydrogen, methyl or ethyl; R4 is optionally substituted: C1-6 alkyl, C3-7 cycloalkyl C1-3 alkyl or C3-7 cycloalkyl; and N-oxides of -NR2 where chemically possible; and S-oxides of sulphur containing rings where chemically possible; and pharmaceutically acceptable salts thereof. Processes for their preparation, their use as therapeutic agents and pharmaceutical compositions containing them.
Patent TW-357154-B (TW)
Title: Preparation and use of novel reactive and processable fluororubbers
Inventor: KRUGER RALF
IPC: C08K5/3477
Filed: 1996-08-15
Granted: 1999-05-01
Abstract: Preparation and use of novel reactive and processable fluororubbers, including (i) at least one fluorine-containing polymer (A), including iodine and residual bromo passing the covalent bond together with the polymer chain terminal carbon atom having at least one fluoride straight chain or branched C2-C8 olefine monomer being selectively substituted by other halo atoms, selected from fully fluorinated vinyl ether, non-fluorinated olefine and non-fluorinated vinyl ester, and 0.006-0.1% (mol), (ii) double-bond (I) compound (B) of 0.3-10% (weight) being sufficiently polymerized onto free radical fragment, and in conjugation with itself or the double bond (I) or having <pi> electron systems of easily transferible hydrogen atoms at olefine propyl and other double bonds or reactive radical groups, and (iii) at least another selective auxiliary material (C).
Patent TW-436291-B (TW)
Title: Topical compositions containing N-acetylcysteine and odor masking materials
Inventor: HOLLINGSHEAD JUDITH ANN
IPC: A61K31/22
Filed: 1996-11-04
Granted: 2001-05-28
Abstract: Disclosed are topical compositions comprising from about 0.01% to about 50% by weight of N-acetylcysteine or related compounds, from about 0.01% to about 0.5% by weight of selected combinations of certain perfume chemicals to effectively mask malodors associated with topical application of the N-acetylcysteine or related compounds on skin; and a cosmetically acceptable topical carrier. These topical compositions are useful for visibly improving the appearance of skin.
Patent TW-447147-B (TW)
Title: Exposure apparatus and method for forming thin film transistor
Inventor: PARK CHEOL-HEE
IPC: H01L21/84
Filed: 1996-12-09
Granted: 2001-07-21
Abstract: The present invention discloses a technology for forming a thin film transistor. There is provided an insulating substrate having a gate electrode and a gate insulating layer for protecting the gate electrode thereon A first semiconductor layer is then formed on the substrate. An insulating layer for etch stopper is formed on the first semiconductor layer and the gate insulating layer. A photoresist film is coated on the whole surface of the resultant structure. A selected portion of the photoresist film is exposed to light by projecting a linear light to a section starting from the backside of the substrate to the photoresist film, the substrate being moved horizontally. Etch stopper layer is formed by developing the exposed photoresist film and then removing the remaining photoresist film.
Patent TW-367425-B (TW)
Title: Structure and manufacturing method for thin film transistor
Inventor: JENG JHIA-SHIUNG
IPC: G02F1/1368
Filed: 1997-01-27
Granted: 1999-08-21
Abstract: A kind of high performance thin film transistor structure which is to change the process of transparent electrode to be followed by the passivation process. The transparent conductive layer can be connected through the contact holes with the source and partly overlapped the channel region. The structure can shorten the effective channel length and improve the component characteristics. If the transparent conductive layer is changed to dense metal layer and overlapped completely on the channel region, it can be used as the mask of thin film transistor.
Patent TW-350053-B (TW)
Title: Electronic article surveillance tag product and method of manufacturing same
Inventor: HABEGER JR
IPC: H05K3/46
Filed: 1997-05-01
Granted: 1999-01-11
Abstract: An electronic article surveillance tag, having a substrate having a surface; a first element, disposed on the surface for operation with application of an electronic signal, with electric inductance; a second element, disposed on the surface for operation with application of an electronic signal, with electric capacity; coupling of the first and the second element for forming a resonant circuit, of which a tag is added an electronic signal of predeterined resonant frequency, the circuit would make resonance; said second element on the substrate having an dielectric ink, having a dielectric constant being used on the mono surface of the substrate for the resonant circuit as desired.
Patent TW-362956-B (TW)
Title: Method for applying seasoning liquid to dried or roasted laver
Inventor: TAKASHIMA SHUJI
IPC: A23L17/00
Filed: 1997-05-22
Granted: 1999-07-01
Abstract: There is provided a method for applying seasoning liquid to dried or roasted laver, in which seasoning liquid containing a solid matter can be applied, dried or roasted laver is not wound around a roller, and which is good for health and provides proper taste. A seasoning liquid is stuck on convex surfaces of hydrophobic rollers having a rugged surface or concave surfaces of rollers, and dried or roasted laver is brought into contact with said rollers or rollers, by which the seasoning liquid stuck on said convex surfaces or concave surfaces is applied to the dried or roasted laver.
Patent TW-363904-B (TW)
Title: Recycling process for waste PCB
Inventor: CHEN RUNG-AN
IPC: B09B3/00
Filed: 1997-05-24
Granted: 1999-07-11
Abstract: The waste PCB is chiefly composed of copper, resin and glass fiber. As such, this developed technology aims at the recycling of its copper and the reutilization of non-metal materials. The waste PCB, after crushing to a size of 4 mm, is put into a leaching tank filled with 18-25% CuCl2 solution, from which copper is oxidized to be CuCl. Moreover, the non-metal residue, mainly composed of resin, glass and fiber, can ultimately pass the TCLP test (Cu < 15 ppm). After the leaching step, the residue (20-30%) mixed with wood sheet (80-70%) and some thermosetting plastic then molded in a 130-160 DEG C, 30-5-Kg/m<SP>2</SP> condition to become particle board. In this regard, Waste PCB can be completely rescued by the above process.
Patent TW-328059-B (TW)
Title: Plastic air-cushion boat and its fabrication method
Inventor: Wang ming-zheng
IPC: B29C65/08
Filed: 1997-06-30
Granted: 1998-03-11
Abstract: A fabrication method for a plastic air-cushion boat consists of the following steps: A. Cut a PVC net-lined plastic cloth to get an upper piece, a pulling strip, and a bottom piece of appropriate dimensions, wherein the PVC net-lined plastic cloth is constructed by clamping a nylon net cloth in between two PVC plastic cloths; B. Bind the upper piece and the pulling strip together with a double-layer PVC net-lined plastic cloth by using a high-frequency method, and cut off the excessive portion of the upper piece; C. Bind the pulling strip with the bottom piece by using a high frequency; D. Bind the upper piece and the bottom piece together with a double-layer PVC net-lined plastic cloth by using a high frequency; E. Finish fabricating the air-cushion boat which can be used after been inflated; Features of the invention following the aforementioned steps include better hardness, improved rowing speed and stability, sturdy and reliable joint, and not liable to break or leak.
Patent TW-350990-B (TW)
Title: Semiconductor die bonding apparatus having multi-bonding system
Inventor: JIN HO-TAE
IPC: H01L21/00
Filed: 1997-08-14
Granted: 1999-01-21
Abstract: A sort of semiconductor die bonding apparatus having multi-bonding system, including at least 2 wiring units, of which each adapts a mold block to the bonding frame; a mold block supply unit, which alternately supplies mold blocks to one of the 2 wiring units; and at least one bonding frame supply unit, for feeding bonding frames to the individual wiring units.
Patent TW-349027-B (TW)
Title: A high voltage pulse generating circuit in a radiation treatment device
Inventor: HITCHCOCK ROGER N
IPC: H03K3/015
Filed: 1997-09-06
Granted: 1999-01-01
Abstract: A high voltage pulse generating circuit comprising: a source of D.C. power having positive and negative terminals; a flyback transformer having a primary winding and a secondary winding, the primary winding having first and second terminals for connection to the source of D.C. power; a device for generating a signal indicating the amplitude of the current in the primary winding; and a solid state switching circuit for coupling the source of D.C. power to the primary winding of the flyback transformer, the primary winding being coupled to the power source in response to a control signal, and decoupled from the power source when a predetermined level of current is detected in the primary winding.
Patent TW-420842-B (TW)
Title: Scanning exposure apparatus
Inventor: TAKAHASHI KAZUHIRO
IPC: G03F7/20
Filed: 1997-10-01
Granted: 2001-02-01
Abstract: A scanning exposure apparatus includes a light source, an illumination optical system for forming a secondary light source with light from the light source, and for illuminating a portion of a reticle having a pattern, a projection optical system for projecting the pattern of the reticle as illuminated, on to a wafer, a reticle stage for supporting the reticle and for scanningly moving the reticle in a predetermined scan direction, relatively to the projection optical system, a wafer stage for supporting the wafer and for scanningly moving the wafer relatively to the projection optical system, and a base for supporting the reticle stage and being supported by dampers, wherein the illumination optical system is divided into a first portion being supported by the base and a second portion supported by a floor, independently from the base, and wherein the predetermined direction of the reticle stage is substantially or approximately parallel to an optical axis direction at a location where the illumination optical system is divided.
Patent TW-428014-B (TW)
Title: Dye set for improved ink-jet image quality
Inventor: DEARDURF LARRIE A
IPC: C09D11/40
Filed: 1997-10-23
Granted: 2001-04-01
Abstract: In accordance with the invention a set of dyes suitable for use in ink-jet inks and method for formulating the same are provided. The yellow ink of the present invention contains a yellow colorant having a CIELAB hue angle, h', less than 900 to provide a true representation of colors, particularly skin tone colors. More specifically, a specific dye set for formulating the yellow, cyan, and magenta inks is disclosed, comprising Yellow 104, Direct Blue 199, and Magenta 377 dyes, respectively. The Yellow 104, the Magenta 377, and the DB 199 dyes provide near photographic images having lightfast characteristics necessary to preserve the trueness of the ink-jet images by (1) producing images having less light fade and (2) images that when they do fade, fade in a more uniform manner across the color set.
Patent TW-345750-B (TW)
Title: Integrated circuit capacitor with improved voltage coefficient of capacitance
Inventor: HOUR JIIN-SHAN
IPC: H01L29/00
Filed: 1997-11-07
Granted: 1998-11-21
Abstract: An integrated circuit capacitor with improved voltage coefficient of capacitance (VCC), which comprises: (a) a first capacitor formed on a semiconductor wafer; (b) a second capacitor formed on the semiconductor wafer; (c) the first capacitor and the second capacitor being connected in parallel, I.e., the lower layer electrode of the first capacitor being connected to the upper layer electrode of the second capacitor, then connected to a working power source; on the other hand, the upper layer electrode of the first capacitor being connected to the lower layer electrode of the second capacitor, and then connected to the ground.
Patent TW-388152-B (TW)
Title: Remote control unit
Inventor: WONG FELIX
IPC: F24F11/00
Filed: 1998-01-16
Granted: 2000-04-21
Abstract: A remote control unit for use with an air conditioner has an LCD display (16) offering a choice of control functions and a master control button (14) for selecting and setting a desired function. A night light is incorporated in the display (16) and operates each time the control button (14) is pressed, but only between predetermined on and off time set by the internal clock of the unit. In another aspect of the invention, the characteristic sound of an acknowledgement signal, emitted by the air conditioner on receipt of a remote command, is dependent on the function being controlled.
Patent TW-520371-B (TW)
Title: Phenyl xanthine esters and amides
Inventor: DALUGE SUSAN MARY
IPC: C07D473/06
Filed: 1998-02-24
Granted: 2003-02-11
Abstract: A compound of formula (I) or a solvate thereof wherein: X is -O- or -NH-; Q is (-CH2-)p, (-CH=CH-)p, (-C ≡ C-)p where p is an integer of from 0 to 4; R1 is hydrogen or methyl; R2 and R3 independently represent O or S; n is an integer of 1 to 50; and R is hydrogen or methyl.
Patent TW-541667-B (TW)
Title: Crown-type capacitor of high-density DRAM
Inventor: LIAU YING-RUEI
IPC: H01L21/8242
Filed: 1998-03-27
Granted: 2003-07-11
Abstract: The inventive capacitor is formed by forming a stack layer comprising silicon dioxide layer and silicon nitride layer, etching the stack layer by using a high-selectivity etching method, depositing polysilicon on the etched stack layer, etching polysilicon by using dry etching method to expose the top of silicon nitride layer, etching back the polysilicon layer by anisotropic etching, removing the stack layer, forming an insulation layer along the final structure, and depositing polysilicon on the insulation layer.
Patent TW-365023-B (TW)
Title: Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip
Inventor: LIN TSAI-SEN
IPC: H01L21/02
Filed: 1998-04-27
Granted: 1999-07-21
Abstract: The invention provides a kind of method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip which is used after the hydrous processing preventing forming water mark of native oxide structure on the surface so that the followed metal silicide layer will not have the problem of not being adhesive with the surface of doped polycrystalline silicon layer. The method includes the following steps: (1) by the insitu method to form the silicon layer with water-rejective property on the surface of polycrystalline silicon layer of semiconductor chip; (2) proceed a hydrous process to remove the contaminants on the chip surface; (3) proceed heat treatment for interaction of doped polycrystalline silicon layer and the silicon layer with water-rejective property to form a complete doped polycrystalline silicon layer.
Patent TW-355688-B (TW)
Title: Co-structured circuit for varying speed of toy track cars
Inventor: Zhang qi-xin
IPC: A63H29/22
Filed: 1998-06-22
Granted: 1999-04-11
Abstract: A co-structured circuit that allows varying the speed of toy track cars; an independent voltage circuit is provided that plugs into existing battery voltage circuit to form a co-structured circuit; the independent voltage circuit is a voltage supplier that uses one battery or more batteries with independent anodes and negatives, each can be connected in serial with existing battery circuit to form a co-structured circuit that compensates and increases the voltage for car motors as variations of speeds require.
Patent TW-372902-B (TW)
Title: Polishing machine
Inventor: KOTABIRI FUMINARI
IPC: B24B47/04
Filed: 1998-07-15
Granted: 1999-11-01
Abstract: The polishing machine of the present invention is capable of improving flatness of the work piece. In the polishing machine, a carrier (12) is formed into a thin plate having a through hole (12a) in which a work piece (10) is accommodated. An upper polishing plate (14) polishes an upper face of the work piece (10). A lower polishing plat (16) pinches the work piece (10) with the upper polishing plate (14) and polishes a lower face of the work piece (10). A driving mechanism moves the carrier (12) along a circular orbit in a plane without revolving. With this structure, the upper and lower faces of the work piece (10), which has been pinched between the polishing plates (14, 16) are polished by the polishing plates (14, 16).
Patent TW-459036-B (TW)
Title: Acetylene derivatives
Inventor: REIFFENRATH VOLKER
IPC: C07D319/06
Filed: 1998-07-20
Granted: 2001-10-11
Abstract: Acetylene derivatives of the formula I, in which R, A1, A2, Z1, Z2, Z3, L1, L2, L3, Y, m and n are as defined in claim 1, are suitable as components of liquid-crystalline media.