Patent SG-11201906618Y-A (SG)
Title: Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber
Inventor: TAN ZHONGKUI
IPC: H01L21/3065
Filed: 2017-10-20
Abstract: WO 18/ 136 121 Al Fig. 4 Primary RF Generator Matching Circuit j — 127 100 121 71 721 71 71 771 1 7 1 7 409 Control System LU - -- ----- - -_ 102 102 103 i 103 • -I I j_4110197 11 1 - 107 X113 al 109 — 403 j — 407 Matching Matching Circuit Circuit 401 Supplemental j 405 Plasma Bias RF Density RF Generator Generato 101 123 125 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 26 July 2018 (26.07.2018) W I P 0 I PCT omit VIII °nolo VIII VIII oimIE (10) International Publication Number WO 2018/136121 Al (51) International Patent Classification: H01L 21/3065 (2006.01) HO5H 1/46 (2006.01) H01J 37/32 (2006.01) H01L 21/67 (2006.01) (21) International Application Number: PCT/US2017/057728 (22) International Filing Date: 20 October 2017 (20.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/408,326 17 January 2017 (17.01.2017) US (71) Applicant: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US). (72) Inventors: TAN, Zhongkui; 4650 Cushing Parkway, Fre- mont, CA 94538 (US). ZHANG, Yiting; 4650 Cushing Parkway, Fremont, CA 94538 (US). FU, Qian; 4650 Cush- ing Parkway, Fremont, CA 94538 (US). XU, Qing; 4650 Cushing Parkway, Fremont, CA 94538 (US). WU, Ying; 4650 Cushing Parkway, Fremont, CA 94538 (US). SRIRA- MAN, Saravanapriyan; 4650 Cushing Parkway, Fremont, CA 94538 (US). PATERSON, Alex; 4650 Cushing Park- way, Fremont, CA 94538 (US). (74) Agent: WRIGHT, Kenneth, D. et al.; Martine Penilla Group, LLP, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, (54) Title: NEAR-SUBSTRATE SUPPLEMENTAL PLASMA DENSITY GENERATION WITH LOW BIAS VOLTAGE WITHIN INDUCTIVELY COUPLED PLASMA PROCESSING CHAMBER (57) : A substrate is positioned on a substrate support structure with- in a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode with- in the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequen- cy signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate. [Continued on next page] WO 2018/136121 Al IIMEDIM000101011EIEMM0M01111011H111110101111110110111111 TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))