Patent GB-1075398-A (GB)
Title: Improvements in or relating to the production of monocrystalline layers of semiconductor material
IPC: C30B25/14
Filed: 1964-11-04
Abstract: In the deposition of a monocrystalline layer of semi-conductor material e.g. Si, Ge, or Aiii Bv compounds, on a heated carrier or carriers of the same or different material by the thermal decomposition of a gas consisting of or including a gaseous substance or mixture of gaseous substances which is thermally decomposed e.g. silicochloroform or silicon tetrachloride to form the semi-conductor material, the carrier or assembly of carriers is housed in a reaction vessel to which the reaction gas is supplied through two or more apertures in the side walls thereof, said apertures being so arranged that the stream of reaction gas entering through each aperture is parallel to and is led over the surface of a separate part of said carrier or assembly of carriers, the exhaust gases from said reaction vessel being withdrawn from a point above the approximate centre of the carrier or assembly of carriers.  The reaction gas may include a carrier gas, and a gaseous doping material.  The carrier or each of the assembly of carriers may be in the form of a plate made of the same material as is being deposited, and the carrier or carriers may also be supported by a support made from the same material.  The support may be longitudinally extending and the reaction gas may be introduced through apertures arranged so that the gas flows over the carrier or assembly of carriers from the two ends of the support. The carrier or assembly of carriers may be heated by an external heat source through the walls of the chamber e.g. by inserting the reaction vessel in a tubular furnace.  Alternatively, the carriers may be heated by induction or by passing an electric current through the support.  Apparatus suitable for carrying out the specified process is described and claimed, and comprises either a tubular reaction chamber, or the conventional base and dome construction. The apparatus is preferably made of quartz, but the reaction chamber may be made of the semi-conductor material being deposited, and be inserted in an outer quartz vessel.ALSO:In the deposition of a monocrystalline layer of semi-conductor material, e.g. Si, Ge or A111Bv compounds, on a heated carrier or carriers of the same or different material by the thermal decomposition of a gas consisting of or including a gaseous substance or mixture of gaseous substances which is thermally decomposed to form the semi-conductor material, the carrier or assembly of carriers is housed in a reaction vessel to which the reaction gas is supplied through two or more apertures in the side walls thereof, said apertures being so arranged that the stream of reaction gas entering through each aperture is parallel to and is led over the surface of a separate part of said carrier or assembly of carriers, the exhaust gases from said reaction vessel being withdrawn from the point above the approximate centre of the carrier or assembly of carriers.  The reaction gas may include a carrier gas, and a gaseous doping material.  The carrier or each of the assembly of carriers may be in the form of a plate made of the same material as is being deposited, and the carrier or carriers may also be supported by a support made from the same material.  The support may be longitudinally extending and the reaction gas may be introduced through apertures arranged so that the gas flows over the carrier or assembly of carriers from the two ends of the support. The carrier or assembly of carriers may be heated by an external heat source through the walls of the chamber, e.g. by inserting the reaction vessel in a tubular furnace.  Alternatively, the carriers may be heated by induction or by passing an electric current through the support.  Apparatus suitable for carrying out the specified process is described and claimed, and comprises either a tubular reaction chamber, or the conventional base and dome construction. The apparatus is preferably made of quartz, but the reaction chamber may be made of the semi-conductor material being deposited, and be inserted in an outer quartz vessel.