baber/WOPTO huggingface dataset:
Patent JP-H10209133-A (JP)
Title: Plasma ashing device/method
Inventor: ASANO TAKASHI
IPC: H01L21/302
Filed: 1997-01-28
Abstract: PROBLEM TO BE SOLVED: To provide a device and a method for efficiently ashing/removing a photoresist adhered to the side wall part of a semiconductor substrate. SOLUTION: The plasma ashing method is to heat the semiconductor substrate 5 by a heater board 9 being a heating mechanism and to etch the photoresist by the down flow of an oxygen radical generation mechanism. In such a case, the substrate is installed on quartz pins 16 being supporting stands smaller than the semiconductor substrate 5 and it is spatially detached from the heat board 9 being the heating mechanism. Thus, the photoresist 22 on the side of the semiconductor substrate is etched.
Patent JP-H08196382-A (JP)
Title: Device for mounting headrest into child seat body
Inventor: TSUCHIYA MASAAKI
IPC: A47C7/38
Filed: 1995-01-30
Abstract: PURPOSE: To provide a headrest capable of being easily assembled into a child seat and absorbing an impact force. CONSTITUTION: A headrest mounting device is formed out of a body having a headrest shaft insertion hole 22 formed within a child seat body 11 over an area from the upper section thereof to the lower section as well as a horizontal chamber open to the hole 22, a stopper 31 laid in the horizontal chamber, a pressing means 32 for energizing the stopper toward to the hole 22, and a lever 33 for moving the stopper in a direction against the energizing force of the means 32. The upper end of the body 11, with a headrest shaft inserted in the hole 22, can come in contact with the lower end of a pillow section, and a headrest shaft insertion section formed below the upper end of the body 11 keeps the intermediate section of the headrest shaft inserted in the hole 22.  Also, constitution is so made that a shaft bearing section formed on the body 11 under the shaft insertion section supports the end of the headrest shaft.
Patent JP-H10192445-A (JP)
Title: Stool for stepping exercise
Inventor: OGAWA NOBUKO
IPC: A63B23/10
Filed: 1997-01-10
Abstract: PROBLEM TO BE SOLVED: To easily regulate the strength of stepping exercise of a stool while stimulating the sole of the foot according to the physical condition of each individual. SOLUTION: A mat 4 having irregularities to stimulate the sole of the foot is placed on either one of two stools 2 and 3 differed in height, or on the upper surface of the bases 2, 3 which are stacked. Thus, the strength of the stepping exercise of the stool while stimulating the sole of the foot, or the height of the stool can be easily regulated according to the physical condition of each individual.
Patent JP-S61174458-A (JP)
Inventor: SHIMIZU TAKEHIKO
IPC: D04B21/18
Filed: 1985-01-25
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H01223965-A (JP)
Title: Apparatus for treatment of human body region
Inventor: GUNTAA JIIGERU
IPC: A61F7/00
Filed: 1989-01-24
Abstract: PURPOSE: To enable to raise or lower blood perfusion at a body region to be treated, by enabling another therapeutic medium under different temperature to the body region to be treated and making never to generate mixing of both therapeutic media. CONSTITUTION: A first therapeutic medium 45 flows through a multi-path valve and an inlet tube 3 into a suction bell 1. The first therapeutic medium 45 leaves the suction bell 1 through a suction reflux connection port 1b and is guided to a pump 15 via a reflux tube 4. A medium 46 is cooled by a cooling compressor 17 and a vaporizer 18 of the compressor is set in the inside of a cold water vessel 19. To prevent mixing of both therapeutic media 45 and 46, the first therapeutic medium 45 is thoroughly sucked out from the suction bell 1. Therefor, a vent valve 5 equipped in a region on the suction flux connection port 1b of the suction bell 1 is actuated. The second therapeutic medium 46 is also sucked out by the pump 15 through the reflux tube 4 in a way same as the first therapeutic medium 45.
Patent JP-H10196236-A (JP)
Title: Window frame structure
Inventor: YANAGIMOTO TOSHIO
IPC: E06B3/66
Filed: 1997-01-09
Abstract: PROBLEM TO BE SOLVED: To easily fit a window body, easily cope with change and correction and present a fine view. SOLUTION: Window frame structure is provided with a two-piece cover member 4 of approximately inverted L-shape cross section for covering the opening side end face of a panel 1 forming a window fitting opening, and a two-piece decorative edge 14 for covering the outside of the cover member 4 and holding a window body 11. The cover member 4 has a holding recessed groove 9 opened outward. The decorative edge 14 is provided with a skirt part 15 for covering a vertical piece 5 of the cover member 4, a keep part 16 for holding the window body 11, and a protruding part 18 engaged with the holding recessed groove 9.
Patent JP-S62172468-A (JP)
Title: Converting method for picture information
Inventor: FUKAZAWA HIDEMICHI
IPC: G06T1/00
Filed: 1986-01-24
Abstract: PURPOSE:To easily convert picture information by representing picture element points in respective reference blocks by using a reference color point in the reference block and the picture element points outside the reference block by using the reference color point in the nearest distance on a color solid, respectively. CONSTITUTION:A color solid has a conical shape in which the direction of height of the cone indicates the lightness V, the radial direction indicates the saturation S and the circumferential direction indicates the hue H and is divided into four in the direction of the lightness, three in the direction of the saturation and 12 in the direction of the hue, namely into 144 blocks in the total. On this color solid, the respective picture elements represented in the form of (H, S, V) are plotted as the picture element points and some blocks are selected in the sequence of the large number of the picture element points included from the 144 blocks as reference blocks. In this manner, the n pieces of reference blocks B1-Bn are selected and at the same time, reference points Q on the respective reference block are decided as the reference color points Q1-Qn are all the picture points are replaced by any one of the n pieces of reference color points Q1-Qn and subsequently, other specification is converted. Thereby, the optional picture information can be easily converted to the picture information coinciding with the specification.
Patent JP-H07217620-A (JP)
Title: Nail and connecting nail
Inventor: OTOJIMA HIRAO
IPC: B27F7/13
Filed: 1994-02-07
Abstract: PURPOSE:To provide a nail and a connecting nail capable of fixing lumber, metal and the like on an ALC material easily. CONSTITUTION:A nail 1 which is formed in such a way that a major axis and a minor axis are joined to each other at a top end part and a flange part for driving is provided on the minor axis, is supported in a hole 11 provided on a nail connecting member 10 which is formed by bending in longitudinal direction and in parallel so as to formed in an U-shape and being formed as a belt shaped member. The hole 11 is formed in an elliptical shape, the elliptical diameter thereof is nearly equal to the summation of both diameters of the major axis and the minor axis, and direction of the elliptical diameter is crossed with the nail driving direction and moving direction of the nail connecting member 10. A notch 12 is communicated with the hole 11 from the rim part of the nail connecting member 10.
Patent JP-S60158617-A (JP)
Title: Thin film evaporation device
Inventor: SHIYUHARA AKIRA
IPC: H01L51/40
Filed: 1984-01-27
Abstract: PURPOSE:To enhance the rate of polymerization of the monomer of an organic compound, and to enable to obtain easily a polymerized compound thin film by a method wherein ultraviolet rays are projected in the neighborhood of a substrate to the cluster of the monomer of the organic compound to make the cluster to absorb energy of the ultraviolet rays. CONSTITUTION:A substrate 18 is supported by a substrate holder 22, anthracene 5 is accommodated in a crucible 4, and the inside of a vacuum tank 1 is exhausted. Then ultraviolet lamps 30 are operated to project ultraviolet rays 31 to the substrate 18. The temperature of the anthracene 5 in the crucible 4 is risen according to filaments 6 for bombarding. Anthracene vapor spurted out from a nozzle 4a is made to a cluster formed by loose bonding of atoms of a large number, moreover form cluster ions according to an ionizing means to be accelerated by accelerating electrodes 14, absorb ultraviolet energy together with a neutral cluster 15, and collide with the substrate 18 to form a thin film.
Patent JP-H01191715-A (JP)
Title: Operation of blast furnace
Inventor: KATO TOMONORI
IPC: C21B5/00
Filed: 1988-01-26
Abstract: PURPOSE:To allow a blast furnace to satisfy conditions necessary for suspension of blast and to accurately set the time of suspension of blast by starting reduction of pressure at the time when a blend for suspension of blast lowers to a prescribed level, regulating the internal pressure of the furnace during reduction of pressure, continuing discharge of cinder, restarting reduction of pressure at the time when gas spouts from the tap hole and suspending blast. CONSTITUTION:At the time when a starting material blend for suspension of blast in a blast furnace lowers to the end of a tuyere or a prescribed level, reduction of pressure is started by opening a septum valve. The valve is then closed, the internal pressure of the furnace is kept constant and discharge of cinder is continued. At the time when gas spouts from the tap hole, reduction of pressure is restarted and rapidly blast is suspended. Operation immediately before suspension of blast can be simplified and the time of suspension of blast can be systematically set.
Patent JP-H08203929-A (JP)
Title: Manufacture of semiconductor device
Inventor: ISHIMARU MASAAKI
IPC: H01L29/41
Filed: 1995-01-31
Abstract: PURPOSE: To make a high-degree dimensional control possible in the manufacture of a semiconductor device as well as to make the simplification of the processes for the manufacture possible by a method wherein a polymethyl methacrylate electron-beam resist is used as an electron-beam resist and a phenolic hydroxyl group-containing styrene resin negative resist is used as a photoresist. CONSTITUTION: An electron-beam resist film 7 is formed on a semiconductor substrate 5 to form an aperture pattern 1 and a photoresist film 8 is formed on the film 7 to form an aperture pattern 2 in the film 8 in such a way that the aperture pattern 1 is exposed. A gate electrode 10 with a T-shaped sectional form is formed through these two aperture patterns 1 and 2. In the case where a semiconductor device is manufactured through such the processes, the film 7 is provided so that it is a polymethyl methacrylate electron-beam resist and the film 8 is provided so that it is a phenolic hydroxyl group-containing styrene resin negative resist. For example, a gate electrode wiring part 11 is formed simultaneously with a gate electrode 10.
Patent JP-H03218636-A (JP)
Title: Manufacture of field effect semiconductor device
Inventor: HORI ATSUSHI
IPC: H01L21/265
Filed: 1990-01-24
Abstract: PURPOSE:To facilitate the etching process of the second conductive film as an upper layer by a method wherein the upper surface of the first conductive film in wiring shape is electrically connected to the side of the second conductive film also in wiring shape through the intermediary of the third conductive film left after the etching process. CONSTITUTION:A gate oxide film 101, a polysilicon film 102 as the first conductive film, a silicon oxide film 103 as a buffer film and another polysilicon film 104 as the second conductive film are successively formed on a P type silicon single crystal substrate 100. Next, the other polysilicon film as the third conductive film is evenly deposited while spacers 106A, 106B comprising polysilicon film are left on the sidewall of a gate electrode 104A by anisotropical dryetching process and simultaneously, the polysilicon film 102 is etched away to form a 102A as the lower layer gate electrode. Through these procedures, the etching process of the second conductor film 104 can be facilitated, the dispersion in the gate width can be minimized while enabling the impurity dispersion in the semiconductor substrate to be controlled shallowly and evenly.
Patent JP-H06229043-A (JP)
Title: Construction method using slab
Inventor: OGAWA HIROSHI
IPC: E04B5/02
Filed: 1993-01-29
Abstract: PURPOSE:To rationalize a construction work, including the saving of labor and the shortening of a construction period by obviating a work for placing concrete, and carrying out an equipment work separately. CONSTITUTION:Precast concrete slabs 2 with joint pieces 7 buried at the longitudinal ends 2a thereof are arranged on the flange 1a of a steel beam frame 1 as floor panels in such a way as placing the ends 2a thereon. Also, the joint pieces 7 are welded and fixed to the flange 1a of the steel beam frame 1. A gap between precast concrete slabs 2 on the flange 1a is filled with grout, and floor panels 12 are laid over the entire surface of the slabs 2 so formed, via support legs 12a for forming wiring space below.
Patent JP-S61174156-A (JP)
Inventor: OCHI KOSUKE
IPC: C04B24/22
Filed: 1985-01-28
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H08202082-A (JP)
Title: Magnetic toner and its production
Inventor: NAGASE TATSUYA
IPC: G03G9/083
Filed: 1995-01-31
Abstract: PURPOSE: To provide a method of producing a toner capable of substantially eliminating a premixing process in a melting and kneading process using a biaxial extruder. CONSTITUTION: In the toner obtained by at least kneading a composition comprising at least a resin, a magnetic body and a releasing agent with the twin-screw extruder, the twin-screw extruder has at least >=2 raw material supply openings 4, 6 in the barrel lengthwise direction, a composition comprising at least the resin and the releasing agent and having 0.30-0.70g/cm<3> static bulk density is supplied from the 1st raw material supply opening 4 provided on the uppermost upstream side of the extruder, a composition comprising at least the magnetic body and having 0.15-0.30g/cm<3> static bulk density is supplied from the 2nd raw material supply opening 6 provided on the downstream side of the 1st raw material supply opening 4 of the extruder and then both compositions are kneaded.
Patent JP-H05136167-A (JP)
Title: Thin film transistor and its manufacture
Inventor: MURAKISHI TAKEO
IPC: H01L27/11
Filed: 1992-01-29
Abstract: PURPOSE:To reduce leak current at the time of OFF, and decrease the resistance of a wiring layer connected with a source/drain region, by making the length in the channel width direction of a junction part of a pair of source/drain regions with a channel region shorter than the length in the width direction of the source/drain region. CONSTITUTION:The title transistor is provided with the following; a channel region 15a formed in a specified region of a thin semiconductor layer, so as to face a gate electrode 13 via a gate insulating film, and a pair of source/drain regions 15b formed in the thin semiconductor layer so as to sandwich the channel region 15a. In the above thin film transistor, the length w1 in the channel width direction of a junction part 15c of a pair of the source/drain regions 15b with the channel region 15a is made smaller than the length w0 in the channel width direction of the semiconductor layer of the source/drain region 15b. For example, the thickness t1 of the semiconductor layer of the channel region 15a us also made smaller than the thickness t0 of the semiconductor layer of the source/drain region 15b.
Patent JP-S57128970-A (JP)
Title: Manufacture of semiconductor device
Inventor: YAMAZAKI TOORU
IPC: H01L29/78
Filed: 1981-02-02
Abstract: PURPOSE:To take out an electrode excellently from a shallow junction of a MIS element by a method wherein an insulating layer is formed onto a semiconductor substrate, a hole is shaped to an electrode forming section, a semiconductor  layer is molded to the whole surface, a gate insulating layer is formed and a  metal-semiconductor alloy is manufactured to the opening section. CONSTITUTION:Source and drain regions 3 are shaped to the semiconductor substrate 1 of N type Si, etc., and the insulating layer 2 of SiO2, etc. is formed to the surface. The holes 4 are shaped to the electrode forming sections, and the semiconductor layer 5 of poly Si, etc. is molded to the whole surface through a low pressure CVD. The insulating layer 6 of Si3N4, etc. is formed, a window is opened selectively to a gate section, and a gate oxide film 7 is shaped. The nitride film insulating layer 6 is removed, a metal such as Al is evaporated, and each electrode 8, 9, 10 of the source, the drain and the gate is formed through heat treatment. The source and drain elecrodes are changed into the Al-Si alloy, penetration is not generated to the shallow source and drain regions 3, and an excellent contact is formed.
Patent JP-H07253502-A (JP)
Title: Wavelength converting element
Inventor: OGAMI HIDEHARU
IPC: G02B1/115
Filed: 1994-02-08
Abstract: PURPOSE:To obtain a wavelength converting element to be used for a laser wavelength converting device by optical parametric oscillation and to obtain a wavelength converting element having an antireflection film which is excellent in moisture resistance and is hard enough to almost prevent scratches. CONSTITUTION:This wavelength converting element has an antireflection film formed by depositing five films. These films satisfy the following conditions for wavelength lambda0 of laser light generated by the wavelength converting element and resonated in a resonator. From the side exposed to air, the first layer is a film 13 with low refractive index having 0.26-0.28 lambda0 optical film thickness. The second layer is a film 14 with high refractive index having 0.10-0.12 lambda0 optical film thickness, the third layer is the film 13 with low refractive index having 0.10-0.12 lambda0 optical film thickness, the forth layer is the film 14 with high refractive index having 0.10-0.12 lambda0 optical film thickness, and the fifth layer is the film 13 with low refractive index having 0.11-0.13 lambda0 optical film thickness.
Patent JP-S63184572-A (JP)
Title: Steering device for vehicle
Inventor: NAKAJIMA HITOSHI
IPC: B62D6/00
Filed: 1987-01-24
Abstract: PURPOSE:To improve turning performance of a vehicle, by correcting the transmission ratio characteristic of a wheel steering angle with respect to the steering angle of a steering wheel in order to compensate the steering characteristic being fixed based on the steering ratio under low speed when the steering ratio between front and rear wheels is fixed abnormally to two wheel steering condition. CONSTITUTION:A transmission ratio varying means 12 for varying the transmission ratio of wheel steering angle with respect to the steering angle of steering wheel is arranged in the way of a steering force transmission path for transmitting steering force of steering wheel to wheels in a vehicle associated with a four-wheel-steering device 3. A transmission ratio control means 102 for receiving an output signal from a vehicle speed detecting means 106 and controlling the transmission ratio varying means 12 such that the transmission ratio increases as the vehicle speed increases is provided. Furthermore, a steering ratio fixing means 67 for fixing the steering ratio between front and rear wheels to two-wheel-steering condition upon occurrence of abnormality in the four-wheel-steering device 3 is provided, and a transmission ratio correcting means 109 for correcting the output characteristic with respect to the transmission ratio varying device 12 to high speed side in an area where the steering ratio control characteristic is in reverse phase upon fixing of the steering ratio to two-wheel-steering condition is also provided.
Patent JP-S53100297-A (JP)
Title: Analysis method of minor constituent in high purity water
Inventor: SAGA MISAO
IPC: G01N30/08
Filed: 1977-02-15
Abstract: PURPOSE: To perform analysis of minor constituent in high purity water such as analysis of silica concentration by flowing specimen water through a sampling vessel body and allowing the analysis components in the specimen water to be adsorbed in ion exchange resins. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H05204571-A (JP)
Title: Data display device
Inventor: SUZUKI KISOKO
IPC: G06F3/048
Filed: 1992-01-30
Abstract: PURPOSE:To easily perform partial reproducing and partial editing of a moving picture by visually expressing the change with time of the frame picture pattern of the moving picture to easily determine the reproducing and editing point of the moving picture with respect to the data display device which is used for editing of the moving picture and on which the moving picture is displayed. CONSTITUTION:A feature extracting part 13 extracts frame pictures from a data storage part 11, where moving picture data is stored, at a certain interval and calculates the degree of resemblance to calculate the value of the change with time of the picture pattern. The time attribute of moving picture data is stored in an attribute storage part 12, and an information figure generating part 14 generates a time base figure having the length proportional to the reproducing time in accordance with the time attribute. A display control part 15 expresses the value of the change with time of the picture pattern calculated by the feature extracting part 13 on this time base figure by a color or a waveform.
Patent JP-S58132275-A (JP)
Inventor: OGAWA TOKUKADO
IPC: G09F9/00
Filed: 1982-02-01
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H06231632-A (JP)
Title: Manufacture of nb3sn superconductive wire for pcs
Inventor: ICHIHARA MASAMITSU
IPC: H01B12/10
Filed: 1993-02-01
Abstract: PURPOSE:To manufacture a multicore structure of superconductive wire for PCS which can be made in a fine wire by a niobium tube method easily, and has a high specific resistance value. CONSTITUTION:In a Cu-Ni alloy matrix 2, plural lines of complex filaments made by arranging Cu-Mn alloy tubes and Nb tubes in order at the outer side of an Sn filament as the center are provided to form a complex. After applying a hydrostatic pressure extruding process and a wire drawing process to the complex, a heat treatment to produce an Nb3Sn is applied, and thereby, an Nb3Sn layer 4 is formed at the inner side of the remaining Nb tube 3c' by reacting the Sn and the Nb from the inner side of the Nb tube, so as to manufacture a multicore structure of superconductive wire 5 for PCS. By this heat treatment, the inside of the Nb3Sn layer 4 is made into a Cu-Sn-Mn alloy 6, and the reduction of the specific resistance owing to the reduction of Sn is compensated.
Patent JP-S63195490-A (JP)
Inventor: HAINTSU SAUERU
IPC: F16B7/20
Filed: 1988-01-27
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S55107920-A (JP)
Title: Electromagnetic flow meter
Inventor: MIZUGUCHI KOUJI
IPC: G01F1/58
Filed: 1979-02-14
Abstract: PURPOSE: To raise the linearity of flow rate and output characteristic and miniaturize an electromagnetic flow meter for measuring the flow rate of sodium as a unclear reactor coolant or the like, by inserting an eddy current prevention plate into the duct of the flow meter to make it hard for an eddy current to flow.  
     CONSTITUTION: An eddy current prevention plate 11 is inserted into a fluid duct 6. The eddy current prevention plate 11 is made of a material of lower electric conductivity than a fluid. Such a plate is placed at each of the inlet and outlet ports of the flow meter. As a result, the electric resistance of the duct is reduced and it is made hard for an eddy current to flow. Therefore, it is made hard for the eddy current to take place and for magnetic fields near electrodes 4, 5 to be disturbed even if the velocity of the fluid rises. The linearity of the output of the flow meter is thus kept high without enlarging the magnetic poles of the meter. This results in miniaturizing the flow meter. 
     COPYRIGHT: (C)1980,JPO&Japio