baber/WOPTO huggingface dataset:
Patent TW-202223977-A (TW)
Title: Semiconductor device, method of manufacturing semiconductor device, and method of recycling substrate
Inventor: HAYASHI HIDEKAZU
IPC: H01L27/11526
Filed: 2021-01-11
Abstract: The present invention relates to a semiconductor device, a method of manufacturing the semiconductor device, and a method of recycling a substrate. In one embodiment, the method of manufacturing the semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate; forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer; and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer; providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate, and a second portion of the porous layer remains on the second substrate.
Patent TW-202201460-A (TW)
Title: Capacitive sensors and capacitive sensing locations for plasma chamber condition monitoring
Inventor: PAN YAOLING
IPC: H05H1/00
Filed: 2021-01-18
Abstract: Capacitive sensors and capacitive sensing locations for plasma chamber condition monitoring are described. In an example, a plasma processing chamber includes a chamber wall surrounding a processing region. A chamber lid is over the chamber wall and above the processing region. A chamber floor is beneath the chamber wall and below the processing region. A support pedestal is in the processing region and below the chamber lid and above the chamber floor, and the support pedestal surrounded by the chamber wall. A capacitive sensor module can be in an opening of the chamber wall. The chamber lid can include a capacitive sensor module. The chamber floor can include an evacuation port and a capacitive sensor module within or adjacent to the evacuation port. The support pedestal can include a ring structure surrounding a substrate support region, and a capacitive sensor module in an opening of the ring structure.
Patent TW-202145651-A (TW)
Title: Coaxial terminal, coaxial connector, wiring board, and electronic component testing apparatus
Inventor: SESHIMO TAKAHITO
IPC: H01R9/05
Filed: 2021-02-19
Abstract: A coaxial terminal includes a signal terminal, a tubular ground terminal that covers the signal terminal, and an insulating member interposed between the signal terminal and the ground terminal. The signal terminal includes a main body that is covered by the insulating member, an upper contact piece that extends from the main body to +Z direction side, and a lower contact piece that extends from the main body to -Z direction side. The insulating member has an opening through which a part of the main body is exposed. A following formula (1) is satisfied: L2 ≥ 1/2*L1 (1)where L1 is a length of the insulating member along an axial direction of the coaxial terminal, L2 is a length of the opening along the axial direction.
Patent TW-202230761-A (TW)
Title: Image sensor and formation method thereof
Inventor: HUANG CHENG-YU
IPC: G02B1/11
Filed: 2021-03-08
Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).
Patent TW-202221910-A (TW)
Title: Semiconductor storage device
Inventor: WATANABE KENJI
IPC: H01L21/336
Filed: 2021-03-08
Abstract: According to one embodiment, a semiconductor storage device includes: a stacked body in which a plurality of conductive layers are separated from each other and are stacked; a pillar which extends in a stacking direction and comprises memory cells to be formed at intersections with at least some of the plurality of conductive layers; an upper insulating layer arranged on the stacked body; a plug which extends in the stacking direction inside the upper insulating layer and is connected to the upper end portion of the pillar; and a spacer insulating layer which surrounds the plug and has a lower dielectric constant than a dielectric constant of the upper insulating layer.
Patent TW-202230690-A (TW)
Title: Semiconductor structure and method of forming thereof
Inventor: Li zheng-xun
IPC: H01L23/535
Filed: 2021-03-08
Abstract: Some embodiments relate to a semiconductor structure including a semiconductor substrate, and an interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines that are stacked over one another in the dielectric structure. A through substrate via (TSV) extends through the semiconductor substrate to contact a metal line of the plurality of metal lines. A protective sleeve is disposed along outer sidewalls of the TSV and separates the outer sidewalls of the TSV from the dielectric structure of the interconnect structure.
Patent TW-202203978-A (TW)
Inventor: NEUMANN CHRISTOPHER SCOTT
IPC: A61K47/68
Filed: 2021-04-12
Abstract: The present disclosure provides, inter alia, ADCs with charge variant chemical linkers useful in treating various diseases such as cancer and autoimmune disorders.
Patent TW-202232166-A (TW)
Title: Optical imaging system, imaging module and electronic device
Inventor: HUANG GWO-YAN
IPC: G02B9/12
Filed: 2021-04-28
Abstract: The application discloses an optical imaging system, an imaging module and an electronic device. From the object side to the image side, the optical imaging system sequentially includes the first lens with the refractive power, the second lens with the refractive power, the third lens with the refractive power, and the optical imaging system satisfies the following conditions: 0mm< R11<1mm, -5% <DIS<5%, V1 ≥ V2, V3 ≥ V2; wherein, the R11 is the curvature radius on the object side of the first lens, DIS is the optical distortion of the optical imaging system, the V1 is the dispersion coefficient of the first lens, and the V2 is the dispersion of the second lens Coefficient, the V3 is the dispersion coefficient of the third lens. Through the combination of low-high-low refractive index of above three lenses combination, the optical imaging system can achieve the balance of imaging quality and sensitivity.
Patent TW-202204367-A (TW)
Title: Silicon precursor and method of fabricating silicon-containing thin film using the same
Inventor: AN JAE-SEOK
IPC: H01L21/316
Filed: 2021-04-29
Abstract: The present disclosure relates to a vapor deposition compound which may be deposited as a thin film by vapor deposition, and specifically, to a silicon precursor which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and may be deposited at high rate, particularly by high-temperature ALD, and a method for fabricating a silicon-containing thin film using the same.
Patent TW-202213753-A (TW)
Inventor: KIM KOOK-TAE
IPC: H01L27/146
Filed: 2021-05-24
Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including a trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating pattern. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.
Patent TW-202207932-A (TW)
Title: Therapeutic agent for RNA viral infection obtained by combining pyrazine derivative and thiopurine derivative
Inventor: KOMENO TAKASHI
IPC: A61P31/14
Filed: 2021-05-27
Abstract: The present invention addresses the problem of providing a therapeutic agent for RNA viral infection that includes a novel combination of a pyrazine derivative and a specific compound, the novel combination exhibiting an effect against the RNA virus. The present invention also addresses the problem of providing a therapeutic agent for RNA viral infection that includes a combination of a pyrazine derivative and a specific compound, the combination being capable of simultaneously enhancing anti-virus activities against multiple RNA viruses. The present invention provides a therapeutic agent for RNA viral infection obtained by combining a pyrazine derivative or a salt thereof and a thiopurine derivative.
Patent TW-202246722-A (TW)
Inventor: WANG CHIH-MENG
IPC: F28D17/02
Filed: 2021-05-27
Abstract: 本發明關於一種熱交換裝置，包括：一第一管路，包括一入口端及一出口端；一第二管路，包括一入口端及一出口端；一第一熱交換器，連接於該第一管路上；及一第二熱交換器，於該第一管路之入口端與該第一熱交換器之間連接於該第一管路上，且連接於該第二管路上。
Patent TW-202204065-A (TW)
Title: Casting unit for a die casting machine
Inventor: GERNER DANIEL
IPC: B22D17/30
Filed: 2021-06-04
Abstract: The invention relates to a casting unit for a die casting machine, the casting unit comprising a casting container (1) with a casting chamber (2), a casting piston (3), which is arranged in an axially movable manner in the casting chamber, a melt bath connection opening (4), a melt inlet channel (5) from the melt bath connection opening to the casting chamber, a melt outlet channel (6), which leads out of the casting chamber separately from the melt inlet channel, and a shut-off control valve (7) for the melt inlet channel. The shut-off control valve has a valve main body (8) which is arranged on the casting container and has a valve seat (9) and a valve closing body (10) which can be moved relative to the valve seat between an open position and a closed position. According to the invention, the valve main body (8) of the shut-off control valve (7) is held on the casting container (1) at a lateral valve assembly region (11) of the casting container in a manner accessible from the outside and comprises the melt bath connection opening (4), and/or the casting piston (3) is of a spool type, and the shut-off control valve (7) is located with its valve closing body (10) in the melt inlet channel (5) at a flow-technical distance from the melt bath connection opening (4) on the one hand and from the casting chamber (2) on the other hand.
Patent TW-202201809-A (TW)
Title: Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element
Inventor: MATSUKURA YUSUKE
IPC: H01L33/32
Filed: 2021-06-07
Abstract: A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.
Patent TW-202200720-A (TW)
Inventor: MATUS YURIY BORISOVICH
IPC: H01C7/12
Filed: 2021-06-08
Abstract: A method for creating a dielectric thin-film coating for devices having a fusible element is disclosed. The method comprises mixing insoluble and soluble polymers in solid form and exposing the mixture to heat to create a melt mixture. The melt mixture is then dissolved in a solvent to create a slurry which can then be deposited on the device as a thin-film coating to create an interior insulation layer or an external surface.
Patent TW-202202540-A (TW)
Title: Pressure-sensitive adhesive, and pressure-sensitive adhesive sheet
Inventor: TONE YOSHITAKA
IPC: C08G18/48
Filed: 2021-06-15
Abstract: The present invention provides an adhesive that exhibits excellent initial curability, can suppress an increase in adhesive force even when exposed to a hot environment and particularly to a hot, humid environment, and can form an adhesive layer having excellent re-peeling properties. Also provided is an adhesive sheet in which said adhesive is used. The adhesive of the present invention comprises: a hydroxyl group-terminated urethane prepolymer (UPH) that is a reaction product between one or more active hydrogen group-containing compounds (H) having a plurality of active hydrogen groups per molecule, and one or more polyisocyanates (N); and a polyfunctional isocyanate compound (I). The hydrogen group-terminated urethane prepolymer (UHP) is a urethane-based adhesive having a degree of branching of 0.2-0.8 as measured by the GPC-MALS method.
Patent TW-202211830-A (TW)
Inventor: WATAI TETSUO
IPC: A41D13/12
Filed: 2021-06-22
Abstract: 本發明提供一種可提高穿著者之聽診器的使用性之衣服。衣服1係具有：前身片11與後身片12之上衣的衣服，且在前身片11中之右側部分11b具備可收納聽診器之胸件（Chest piece）的至少一部分之第一右側口袋部20，第一右側口袋部20具備用於供胸件之至少一部分出入該第一右側口袋部20的第一右側收納口22，第一右側收納口22中設有可扣合胸件之扣合部24。
Patent TW-202207038-A (TW)
Inventor: LEE CHIA-JUNG
IPC: G06F12/0866
Filed: 2021-06-29
Abstract: A control method for a storage device of a driving recorder includes: configuring a directory entry of a storage device according to a predetermined directory entry stored in a storage unit; configuring a file allocation table of the storage device according to a predetermined file allocation table stored in the storage unit; and controlling a controller to write data to the storage device according to the directory entry and the file allocation table. In one embodiment, entries of the predetermined file allocation table are interleaved to accommodate multiple files and still support a continuous write operation.
Patent TW-202219628-A (TW)
Title: Structures and methods for use in photolithography
Inventor: PIUMI DANIELE
IPC: H01L23/00
Filed: 2021-07-13
Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.
Patent TW-202204140-A (TW)
Title: Shock-absorbent sheet
Inventor: HANABUSA KAKERU
IPC: B32B27/06
Filed: 2021-07-20
Abstract: A shock absorbing sheet 1 is equipped with a silicone-containing layer 2 which comprises a silicone resin, and an elastic layer 3 which overlaps the silicone-containing layer 2. The thickness of the silicone-containing layer 2 is 50-98% of the thickness of the shock absorbing sheet 1. The degree of needle penetration of the silicone-containing layer 2 is 80 to 160, inclusive, as measured in accordance with JIS K 2207 at 25 DEG C. The tensile elasticity of the elastic layer 3 is 1*10<SP>6</SP>Pa to 1*10<SP>9</SP>Pa, inclusive, and the elongation at break of the elastic layer 3 is at least 100%.
Patent TW-202220380-A (TW)
Inventor: CHEN JING
IPC: H03H9/64
Filed: 2021-08-05
Abstract: 本申請實施例提供一種晶圓級聲表面波濾波器與封裝方法，該聲表面波濾波器包括晶圓、電極層、支撐圍牆及蓋板；其中，晶圓包括以晶圓鍵合方式結合的基底層與壓電薄膜層，電極層設置於壓電薄膜層的表面，支撐圍牆在壓電薄膜層與蓋板之間包圍形成密封空腔；蓋板至少包括第一材料層，其採用的材料與基底層採用的材料相同。本申請實施例中通過採用晶圓級封裝方式，可以有效縮小聲表面波濾波器的尺寸；基底層與壓電薄膜層以晶圓鍵合方式結合，基於此類晶圓的聲表面波濾波器的性能受溫度影響小；蓋板採用與基底層相同或類似的材料，增強了元件的可靠性和溫度穩定性。
Patent TW-202220580-A (TW)
Title: Bristle transport packaging, bristle transport unit, and bristle-mounting machine
Inventor: BOUCHERIE BART GERARD
IPC: A46D3/08
Filed: 2021-08-12
Abstract: The invention relates to reusable bristle transport packaging in which loose, pressed-together bristles can be stored and transported, the packaging comprising: a circumferentially closed, continuous, inherently stiff frame part that has two openings which are opposite in the axial direction; and a resilient spring element which is attached to the frame part, which projects, in part, into the interior defined by the frame part and which reduces the receiving cross section for bristles in the frame part.
Patent TW-202224460-A (TW)
Inventor: ROY MICHEL
IPC: H04W8/18
Filed: 2021-08-12
Abstract: 本文描述了用於減少應用樣例化延遲和停機時間的方法和裝置。一種方法可以包括將應用功能從源邊緣資料網路(EDN)元件重新定位到目標EDN元件。該方法可以包括接收指示，和/或基於使用者移動性、資源最佳化要求、關鍵性能指標(KPI)或失敗的重新定位嘗試中的至少一者來確定重新定位應用功能。該方法還可以包括執行朝向目標EDN元件的協定資料單元(PDU)對話建立程序。該方法還可以包括基於針對邊緣使用和能力的一或更多接收的參數來確定重新定位應用功能。該方法還可以包括向歐洲電信標準協會(ETSI)多重存取邊緣計算(MEC)編排器發送應用功能將被重新定位的指示。應用功能可以是使用者平面功能(UPF)。
Patent TW-202229561-A (TW)
Inventor: KANAVARIOTI ANASTASSIA
IPC: C12Q1/6816
Filed: 2021-10-05
Abstract: 本文提供用於偵測生物試樣中核酸靶標分子之存在之方法。在某些態樣中，該方法包含接觸測試試樣，該測試試樣包含(i) 包含核酸靶標分子之生物試樣，及(ii) 鋨酸化單鏈寡核苷酸探針，該探針包含至少一個共價鍵結至經取代或未經取代之四氧化鋨(OsO
         4 )-2,2’-聯吡啶基團(OsBp基團)之嘧啶殘基。
Patent TW-202224774-A (TW)
Title: Electrostatic separation apparatus and method
Inventor: IHARA TAKAYUKI
IPC: B03C7/04
Filed: 2021-10-22
Abstract: An electrostatic separation method according to the present invention comprises applying a voltage between a lower electrode disposed at the bottom or interior of a raw material layer and an upper electrode disposed above the raw material layer to create an electric field between the electrodes, causing a flow in the raw material layer to bring conductive particles into contact with the lower electrode in the raw material layer so that only the conductive particles are charged to have the same polarity as that of the lower electrode, electrostatically polarizing the downward-facing, conveying surface, which is made of a non-conductive material, of a conveyor belt passing through a capture zone defined above the raw material layer and below the upper electrode so that the conveying surface has the same polarity as that of the upper electrode, allowing the charged conductive particles to be selectively released from the surface of the raw material layer and adhere to the conveying surface of the conveyor belt by using the electrostatic force, and separating the conductive particles from the conveying surface that has moved outside the electric field to collect the same.
Patent TW-202224008-A (TW)
Title: Substrate processing apparatus and substrate processing method
Inventor: TAKAHASHI TOMOHIRO
IPC: B08B3/14
Filed: 2021-10-26
Abstract: The present invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus (100) includes a processing tank (2), a substrate holder (130), an air bubble supplying member (4), a processing liquid replenishing member (5), and a controller (111). The processing tank (2) stores a processing liquid (LQ). The substrate holding member (130) holds a substrate (W) in the processing tank (2) to immerse the substrate (W) in the processing liquid (LQ) stored in the processing tank (2). The air bubble supplying member (4) supplies air bubbles to the surface of the substrate (W) immersed in the processing liquid (LQ). The processing liquid replenishing member (5) replenishes the processing tank (2) with the processing liquid (LQ). The controller (111) causes replenishment with the processing liquid (LQ) from the processing liquid replenishing member (5) according to a stepwise or gradual decrease in the amount of air bubbles supplied form the air bubble supplying member (4).
Patent TW-202224760-A (TW)
Title: Spiral-type membrane element and spiral-type membrane module
Inventor: UDA YASUHIRO
IPC: B01D63/10
Filed: 2021-10-28
Abstract: Provided are: a spiral-type membrane element that requires no need for glass fiber reinforcement, includes of a small number of components, and enables a reduction in bypass flow and an increase in effective membrane area; and a spiral-type membrane module. A spiral-type membrane element E according to the present invention comprises: a perforated center tube 5; a roll body R that includes a separation membrane 1 and is wound around the center tube 5; and a cladding disposed on the outer circumference of the roll body R. The cladding includes an external flow channel material 21 that forms a flow channel outside the roll body R while blocking inflow of feed liquid 7 by covering the outer circumference of the roll body R. It is preferable for the external flow channel material 21 to comprise: a sheet material 21a for covering the outer circumference of the roll body R; and a porous material 21b that covers said sheet material 21a.
Patent TW-202223974-A (TW)
Title: Quadrupole mass analyzer and residual gas analysis method
Inventor: TAKAKURA HIROSHI
IPC: H01J49/10
Filed: 2021-11-08
Abstract: The present invention reducing the temperature effect caused by a transformer in a quadrupole mass analyzer includes: an ionization part 21 ionizing a sample; a quadrupole part 23 having two sets of opposed electrodes 23P that selectively pass ions generated by the ionization part 21; a voltage application part 32 applying a voltage obtained by superimposing a DC voltage U and a high frequency voltage Vcosωt on each of the two sets of opposed electrodes 23P; and a ion detection part 24 detecting ions passing through the quadrupole part 23, wherein the voltage application part 32 has a transformer 4 transforming the high frequency voltage Vcosωt, and the transformer 4 is configured by winding a primary winding 42 and a secondary winding 43 around a toroidal core 41, and the primary winding 42 is formed of a plate-shaped metal conductor.
Patent TW-202227590-A (TW)
Title: Phosphor powder, light-emitting device, display device and lighting device
Inventor: EMOTO HIDEYUKI
IPC: H05B33/14
Filed: 2021-11-09
Abstract: A phosphor powder containing phosphor particles of a phosphor represented by general formula Mx(Si,Al)2(N,O)3±y (wherein M represents Li and one or more alkaline earth metals, and 0.52≤x≤0.9 and 0.06≤y≤0.36), in which M is partially substituted with the element Ce, the Si/Al atom ratio is at least 1.5 but not more than 6, the O/N atom ratio is at least 0 but not more than 0.1, Li constitutes 5 to 50 mol% of M, and Ce constitutes 0.5 to 10 mol% of M. If the volume-based particle sizes of this phosphor powder measured by a laser diffraction light scattering method at a cumulative 10%, 50%, and 90% are deemed D10, D50, and D90 respectively, then (D90-D10)/D50 is at least 0.7 but not more than 1.1.