baber/WOPTO huggingface dataset:
Patent TW-404161-B (TW)
Title: A spring clip for mounting a heat sink to an electronic component
Inventor: RODRIGUEZ RAUL M
IPC: H05K7/20
Filed: 1998-03-13
Granted: 2000-09-01
Abstract: A heat sink spring clip having a linearly displaceable deflection member that operatively engages a biasing member for thermally and mechanically connecting a heat sink to an electronic component. The deflection member is moveable in a generally linear manner on and relative to the biasing member between a first position of nonengagement in which the biasing member is substantially undeflected and a second position in which the biasing member is deflected and the deflection member is contactingly and operatively engaged with the heat sink for thermally and mechanically connecting the heat sink to an electronic component. As the deflection member is moved from the disengaged position to the engaged position, complementary elements on the biasing member and deflection member engage one another and cause portions of the deflection and biasing members to move relatively apart. As the biasing member deflects in one direction generally away from the heat sink, the biasing member simultaneously imparts a generally oppositely directed compression force onto the heat sink and electrical components adjacently stacked therebeneath through the deflection member. The deflection member is operatively moveable in a generally horizontal direction longitudinally on and along the biasing member or, in an alternate embodiment, in a direction substantially transverse to the elongation of the biasing member.
Patent TW-428012-B (TW)
Title: Organohydrogensiloxane resin crosslinker curable organosiloxane composition with improved hysteresis characteristics
Inventor: GRIFFITH PHILLIP JOSEPH
IPC: C08G77/20
Filed: 1998-05-22
Granted: 2001-04-01
Abstract: A platinum curing organosiloxane composition having improved hysteresis characteristics when cured. The composition requires the presence of a diorganovinylsiloxy terminated polydiorganosiloxane having a viscosity within a range of 20 Pa.s to 200 Pa.s at 25 DEG C. and containing essentially no ethylenically unsaturated hydrocarbon radicals bonded to non-terminal polydiorganosiloxane having a viscosity within a range of 0.1 Pa.s to 200 Pa.s at 25 DEG C., where from 1 to 5 percent of the non-terminal repeating units of the siloxane comprise a vinyl radical. In addition, the present composition comprises 10 to 30 weight percent of a reinforcing silica filler that has been treated with hexamethyldisilazane and 1,1,3,3-tetramethyl-1,3-divinyldisilazane and an organohydrogensiloxane resin crosslinker comprising greater than 5 silicon-bonded hydrogen atoms per molecule.
Patent TW-412454-B (TW)
Title: Process of producing a component consisting of a gamma-titanium aluminide body jointed to a steel body
Inventor: NGUYEN-DINH XUAN
IPC: B23K20/16
Filed: 1998-04-03
Granted: 2000-11-21
Abstract: This invention concerns a method, materials, and products involving the joining of titanium aluminide to steel by welding each to an iron-based alloy interlayer or connecting piece. The interlayer can be friction welded to the steel and friction welded to the TiAl. The interlayer alloy can be an iron-based superalloy such as A-286. The friction welding of the TiAl to the interlayer can be done in three steps, each with increased pressure between the parts, with a total time of about 30 seconds. Joint strength of 412 MPa can be achieved for a 25.4 mm weld face diameter. The product can be a turbocharger rotor. The connecting piece (4) is composed of an alloy comprising the following composition in weight percent, Ni, less than or equal to 31.99, Fe, greater than 45.69; preferably Ni, less than or equal to 30, Fe, greater than 50; and optimally Ni, less than or equal to 28, Fe, greater than 52. In terms of range, the connecting piece is composed of an alloy comprising the following composition in weight percent, Ni, 20 to 30, Fe, 50 to 60; preferably, Ni 25 to 27, Fe, 52 to 56; and optimally, Ni, 26, Fe, 54.8. The connecting piece (4) is composed of an alloy comprising a Fe/Ni composition ratio in weight percent of greater than or equal to 1.43, preferably greater than or equal to 1.5; and optimally, greater than or equal to 2. In terms of range, the connecting piece (4) is composed of an alloy comprising a Fe/Ni composition ratio in weight percent of greater than or equal to 1.5 to 2.5, preferably greater than or equal to 2 to 2.2; and optimally, greater than or equal to 2.11.
Patent TW-368563-B (TW)
Title: Sheeting pump shell structure and manufacturing method thereof
Inventor: JIAN HUAN-RAN
IPC: F04D1/08
Filed: 1998-04-10
Granted: 1999-09-01
Abstract: A kind of sheeting pump shell of centrifugal pump which includes a main shell, a vane wheel, an inlet dual-flange and an outlet by dual-flange. The main shell has the inlet and outlet to connect the inlet and outlet dual-flange. The rim of inlet dual-flange has an extended skirt structure to be mounted the location far away from the inlet dual-flange and the outlet dual-flange also has the skirt structure to connect with the main body and inlet dual-flange to improve the structural strength and the borne external force of the flange can be dispersed by the skirt structure. There is a special deflection in the main body which can form a pump shell volute in the pump shell with gradually increased section. By at least one roller to press the sheets for manufacturing that the metal plate can be gradually generated plastic deformation to form the pump shell body including the inlet end plate, volute end plate and the neck. Because the sheet pressing process is slow and gradually processing that the machining stress will not concentrate in a certain part.
Patent TW-393801-B (TW)
Title: Coplanar microwave circuit having suppression of undesired modes
Inventor: FAULKNER MARK V
IPC: H01P3/00
Filed: 1998-04-30
Granted: 2000-06-11
Abstract: Lossy resistive films (220, 220') and longitudinally extending coplanar conductors (206, 210) of a radio frequency transmission line are defined on the planar surface (204) of an insulating substrate (202). The resistive film (220 220') may be positioned away from or in the space between parallel conductors (206, 210). The coplanar conductors may be configured as a two conductor coplanar slotline (206, 210) or as part of a three conductor coplanar wave guide (206, 210, 230). The resistive film (338) may also be extended (sea of resistor) over otherwise unused portions of the substrate. Still another embodiment provides a signal attenuating coplanar resistive structure (350) between a coplanar signal conductor (356) and a coplanar ground conductor (370). The coplanar resistive structure (400, 500) may include a meandering, or serpentine conductor (510) or interdigitated comb-like resistive film fingers (412a, 416).
Patent TW-386974-B (TW)
Title: Trash ferment device
Inventor: NIBU KAZUO
IPC: C05F17/02
Filed: 1998-05-28
Granted: 2000-04-11
Abstract: The invention provides a trash fermenting device which can work properly with the mixtures of fermentable and unfermentable trash such as packaged foods, dishes, vinyl plastic, cellophane and disposable chopsticks. After the trash is thrown in and fermented, the matured powder and unfermentable matter can be separated automatically. This device has a fermentation tank 2, a maturation tank 4 on the downstream side of the fermentation tank 2, the first heater 5 attached to the outside wall of the fermentation tank2, the second heater 6 on the outside wall of the maturation tank 4, the first rotating impeller 9 for breaking and stirring the fermentable and unfermenable trash in the fermentation tank 2, the second rotating impeller 10 for stirring the fermentable and unfermenable trash in the maturation tank 4, and a sieve 13 for separating the fermentation processed matter into matured powder and unfermentable matter.
Patent TW-553943-B (TW)
Title: Pharmaceutical composition for treating insulin resistance
Inventor: CARPINO PHILIP ALBERT
IPC: A61P25/00
Filed: 1998-06-22
Granted: 2003-09-21
Abstract: This invention is directed to methods of treating insulin resistance in a mammal which comprise administering an effective amount of a compound of formula I, where the variables are defined in the specification, or the stereoisomeric mixtures, diastereomerically enriched, diastereomerically pure, enantiomerically enriched or enantiomerically pure isomers, or the pharmaceutically acceptable salts and prodrugs thereof to said mammal. The compounds of formula I are growth hormone secretagogues and as such are useful for increasing the level of endogenous growth hormone. In another aspect this invention provides certain intermediates which are useful in the synthesis of the foregoing compounds and certain processes useful for the synthesis of said intermediates and the compounds of formula I. This invention is further directed to methods comprising administering to a human or other animal a combination of a functional somatostatin antagonist such as an alpha-2 adrenergic agonist and a compound of formula I.
Patent TW-407166-B (TW)
Title: Shaft furnace
Inventor: EICHBERGER ERNST
IPC: F27B1/10
Filed: 1998-07-13
Granted: 2000-10-01
Abstract: The invention relates to a shaft furnace (1), particularly to a direct-reduction shaft furnace, with a bed (2) of lumpy material, particularly lumpy material containing iron oxide and/or sponge iron, with discharge devices (4) for lumpy material which are located above the bottom area (3) of the shaft furnace (1), as well as with inlet ports (6) for a reduction gas which are arranged above the discharge device (4). Arrangements (7) for moving the material in the shaft furnace (1) are located between the area formed by the inlet ports (6) and that formed by the discharge devices (4).
Patent TW-368702-B (TW)
Title: Manufacturing method for semiconductor preventing the bonding pad staining
Inventor: LAN JAU-YI
IPC: H01L21/3213
Filed: 1998-07-31
Granted: 1999-09-01
Abstract: A kind of manufacturing method for semiconductor preventing the bonding pad staining whose steps are: providing a substrate on which forms the semiconductor components and a metal layer; forming a passivation layer to cover the metal layer, semiconductor components and substrate; etching the passivation layer to expose part of the metal layer as a metal bonding pad; then, applying fluoric plasma treatment to form a fluoric thin film on the surface of metal bonding pad to prevent the metal bonding pad from staining or discoloration caused by the contact of developer during the followed photolithography process.
Patent TW-388935-B (TW)
Title: Polysilicon load resistance and metal contact structure and method for making the same
Inventor: LIOU RUEI-SHING
IPC: H01L21/31
Filed: 1998-08-11
Granted: 2000-05-01
Abstract: The present invention relates to a polysilicon load resistance and metal contact structure and a method for making the same. The invented polysilicon load resistance and metal contact structure is characterized in that, above the polysilicon load resistance, in addition to the conventional two metal contact pads, a metal silicide layer is additionally formed on the surface of the polysilicon load resistance between the interval of two metal contact pad to achieve complete isolation effect. The present invention emphasizes on the feature which can fully prevent the ingress of hydrogen gas into the polysilicon load resistance layer during the subsequent deposition of the protective layer thereby improving the quality and the yield of the IC device.
Patent TW-394875-B (TW)
Title: Communication interface device, object equipment and communication method
Inventor: SANAI DAIJI
IPC: H04L29/08
Filed: 1998-08-28
Granted: 2000-06-21
Abstract: By directly handling a signal from the network via a simple structure which realized an interface between an object equipment and the internet. Communication object equipment 2 is connected to a communication network 20 interposed between the communication object equipment 2 and a managing device 3 for monitoring operations. This device is provided with a socket server 13 for converting a signal between the communication object equipment 2 and the communication network 20. WWW server 14 is connected to the communication network 20. Storage means 15 is connected to this WWW server 14. According to a client program provided at the managing device 3, the storage means 15 stores and executes an application program while being transferred through the communication network 20 to the managing device 3.
Patent TW-410176-B (TW)
Title: Method and system for applying fluids including fiberized adhesives onto a substrate
Inventor: KWOK KUI-CHIU
IPC: B05C5/02
Filed: 1998-08-31
Granted: 2000-11-01
Abstract: A system and method for applying fluids, including fiberized hot melt adhesive, onto a substrate from one or more meltblowing die assemblies mounted on a manifold that supplies fluid thereto. At least one of the die assemblies is selected from a group of die assemblies having different configurations of fluid dispensing orifices, wherein various combinations of the different die assembly configurations are mountable onto the manifold to provide a wide range of partial fluid dispensing patterns onto the substrate. Each of the plurality of fluid dispensing orifices are flanked by an air dispensing orifice disposed on opposing sides thereof, wherein air dispensing orifices may extend across a portion of the remaining portion of the meltblowing die assembly void of fluid dispensing orifices. At least one of the die assemblies having air dispensing orifices arranged relative to the fluid dispensing orifices to increasingly decrease an oscillation amplitude of fluid dispensed from the fluid dispensing orifices approaching an endmost fluid dispensing orifice thereof.
Patent TW-371350-B (TW)
Title: Center automatic supply system for chilled water
Inventor: LEE WEN-HONH
IPC: H01L21/00
Filed: 1998-09-14
Granted: 1999-10-01
Abstract: A center automatic supply system for chilled water comprises a center supply chiller and a plurality of chillers. The center automatic supply system uses the power design of a chilled water pump of a chiller to supply chilled water required for supplying to other chillers thereby achieving the objective of automated supply at reduced manpower and without interrupting the production line. The invention is particularly suitable for a value industry, such as a semiconductor factory, for increasing the production capacity and value.
Patent TW-397696-B (TW)
Title: Apparatus and process for generating mixed multi-component vapor
Inventor: INABA YUKIO
IPC: C07C41/09
Filed: 1998-10-27
Granted: 2000-07-11
Abstract: A mixed liquid of two or more components different in boiling temperature from each other and soluble in or compatible with each other is evaporated into a mixed vapor having a similar composition to that of the mixed liquid by using an apparatus having a thin film evaporator (1) having a feed inlet (1a) and a delivery outlet (1b), while forcedly circulating the non-evaporated portion of the mixed multi-component liquid by withdrawing the non-evaporated mixed liquid portion from the delivery side end portion of the evaporator and returning the mixed liquid portion into the feed side end portion of the evaporator through a circulating line (3), and the resultant mixed multi-component vapor can be used as a mixed material vapor for a gas phase catalytic reaction for producing, for example, a mono and/or a di-alkylether of an aromatic dihydroxy compound.
Patent TW-410460-B (TW)
Title: Dynamic semiconductor memory and method for manufacturing the same
Inventor: HAMAMOTO TAKESHI
IPC: H01L21/8246
Filed: 1998-12-03
Granted: 2000-11-01
Abstract: A dynamic semiconductor memory and the method for manufacturing the same is as follows: to form the MOS transistor 2 configured with the same width of gate 22 as the unit cell region 13 within the unit cell region 13 separated as an island on the silicon substrate 1; then, forming the trench 31 for capacitor at the edge of the unit cell region 13; forming the capacitor insulation film 33 made of BSTO on the inner wall; burying the storage electrode 34; then, forming the capacitor 3. After forming the storage electrode 34 which is connected with the connector 4 of corresponding source diffusion layer 24, forming the wordline 5 connecting the gate 22 of MOS transistor 2; further forming the bitline 6 connecting the drain diffusion 23 of MOS transistor 2. The invention configures the gate in the unit cell region only and the capacitor insulation film uses high dielectric film to implement the trench capacitor structure of DRAM with high performance and high packing density.
Patent TW-400492-B (TW)
Title: Triangle vector approaching method for the digitized font outline
Inventor: CHEN FRED H Y
IPC: G06F17/16
Filed: 1998-12-15
Granted: 2000-08-01
Abstract: This invention relates to a triangle vector approaching method for the digitized font outline, which discloses a kind of straight line vector approaching process technologyperformed with respect to a few pixels according to the pixel array acquired by scanning the original font in the producing processes of the digitized vector font. The technology disclosed by this invention, is to get the vector points epresenting the font outline from the repaired pixel matrix containing no outline discrete points. Use the triangle judging means provided by this invention and apply one of the vector point as the initial point to perform the approaching process of the straight line vectors within a predetermined maximum tolerance, which takes three consecutive vector points as the unit for point- by-point judgement. As such a font outline processing method which can decrease the descriptive data of the font outline and meanwhile keep the accuracy of the font representation.
Patent TW-399286-B (TW)
Title: Method for manufacturing flash memory
Inventor: SHIU YAU-KAI
IPC: H01L21/8247
Filed: 1998-12-18
Granted: 2000-07-21
Abstract: There is disclosed a method for fabricating flash memory, which can ship a manufacturing step in comparison with the conventional method, and form a low-resistance common drain area. At first, a tunneling oxide layer, a polysilicon layer, and a silicon nitride layer are formed on substrate sequentially. Then, a shallow trench isolation is formed to separate the active area, and the polysilicon layer and silicon nitride layer located on the tunneling oxide layer are defined simultaneously. After the silicon nitride is removed, an inter-polysilicon dielectric and polysilicon are formed on the substrate. In addition to etching the upper-layer polysilicon, the inter-polysilicon dielectric and the bottom-layer polysilicon are also etched to define the gate conductor layer in a memory cell. Thus, the bottom-layer polysilicon can correctly form a floating gate structure.
Patent TW-500950-B (TW)
Title: Orientation process method of liquid crystal and liquid crystal display processed by the same method
Inventor: MOCHIZUKI HIDEAKI
IPC: G02F1/1337
Filed: 1999-01-19
Granted: 2002-09-01
Abstract: A rubbing buff is wrapped around a roller so that an axial direction of short fibers on a rubbing cloth crosses diagonally with a roller rolling direction. The roller is placed so that a rotational shaft crosses diagonally with a moving direction of a substrate. Then orientation films formed on an upper and a lower substrates are rubbed by the roller in a first and second directions whereby an orientation direction is determined. As a result, quality display can be realized on an LCD.
Patent TW-412834-B (TW)
Title: A method of forming a void free trench isolation
Inventor: HONG CHANG-KI
IPC: H01L21/76
Filed: 1999-01-22
Granted: 2000-11-21
Abstract: Disclosed is a method of forming an isolating trench in a semiconductor substrate so as to form void free patterns of isolation within the substrate and to prevent a recess from being generated at side edges of the trench during subsequent etching steps. With the method, a trench forming mask is formed on the substrate, in which the trench forming mask is composed of first and second material layers having an etch ratio different from each other. The substrate is etched using the trench forming mask to form a trench, and then the first material layer is wet-etched to remove both sidewalls of the first material layer and to thereby form an under-cut profile of the trench forming mask. Finally, a trench filling insulation layer is deposited over the substrate filling up the trench forming mask, wherein deposition speed of the trench filling insulation layer is slower at the sidewalls of the first material layer than at an interior of the trench.
Patent TW-409308-B (TW)
Title: The method of taking-off the micro-scrape caused by CMP
Inventor: YANG FU-LIANG
IPC: H01L21/304
Filed: 1999-02-25
Granted: 2000-10-21
Abstract: The method of taking off the defect on the surface of the planar dielectrics of the conductive layer covering the sub-micron integrated circuit structure; the steps comprising: providing a semiconductor substrate of which there is at least one dielectrics on the surface; then, utilize the chemical mechanic polishing method to proceed planarization treatment. Then, deposit one plasma-enhanced chemical vapor phase deposited polymer layer on the surface of the planarized dielectrics, and fill-up the micro-scrape caused by the CMP process. Then, guiding one etching gas into the chemical vapor-phase deposition reactive chamber; back-etch the polymer deposited on the previous step until the bottom of the micro-scrape, wherein the back-etch rate of the deposited polymer is equal to the etch rate of the dielectrics sited below.
Patent TW-410302-B (TW)
Title: Pipelined fast fourier transform processor
Inventor: GLAUME OLIVIER LUDOVIC
IPC: G06F17/14
Filed: 1999-03-12
Granted: 2000-11-01
Abstract: A pipelined Fast Fourier Transform Processor includes, besides a memory arrangement, a cascade of a first arithmetic unit, a scratch memory and a second arithmetic unit. One of both arithmetic units can only perform at least one type of butterfly Fast Fourier Transform arithmetic calculations, whereas the other one can perform, besides this at least one type of butterfly Fast Fourier Transform arithmetic calculations, at least one second type of butterfly Fast Fourier Transform arithmetic calculations. This architecture optimises both timing as well as circuit restrictions.
Patent TW-451521-B (TW)
Title: An electronic component and a method for producing the same
Inventor: AKIMOTO HIROSHI
IPC: H05K1/00
Filed: 1999-03-24
Granted: 2001-08-21
Abstract: An electronic component has an insert member embedded in a resin portion by an insert molding method, with a part of the insert member exposed at an outer surface of the resin portion. At least a part of the exposed portion of the insert member is depressed relative to the outer surface of the resin portion.
Patent TW-405039-B (TW)
Title: Gas analyzing apparatus and method
Inventor: YOSHIDA HIDETOSHI
IPC: G01N30/02
Filed: 1999-04-08
Granted: 2000-09-11
Abstract: This invention provides an apparatus for analyzing gases, and a gas analyzing method which can securely detect, in a short time, whether or not the leakage exists and can carry out analyses successively, safely and accurately in a stable state. The apparatus for analyzing gases is provided with a sample gas introducing systems (1 to 5) for introducing  plural sample gases selectively and analyzers (6, 10, 14), and also has means (9) for monitoring the concentration change of the sample gas component introduced before being exchanged with another sample gas.