Patent SG-11201901142U-A (SG)
Title: Chalcogenide film, device including, and method of forming the same
Inventor: YU XUECHAO
IPC: H01L31/0264
Filed: 2017-08-31
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111111111111111111111111111111111111111111111111111111111111111111111110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\" WO 2018/044237 Al 08 March 2018 (08.03.2018) W I P0 I P C T — (51) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: (30) (71) Applicant: (72) International Patent Classification: (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; H01L 31/0264 (2006.01) C23C 16/30 (2006.01) P.O Box 1088, Rochor Post Office, Rochor Road, Singapore 911833 (SG). PCT/SG2017/050434 (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, 31 August 2017 (31.08.2017) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, English DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, English HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, Priority Data: MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, 10201607347V 02 September 2016 (02.09.2016) SG OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, NANYANG TECHNOLOGICAL TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. UNIVERSITY [SG/SG]; 50 Nanyang Avenue, Singapore 639798 (SG). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, Inventors: YU, Xuechao; c/o Nanyang Technological Uni- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, versity, 50 Nanyang Avenue, Singapore 639798 (SG). UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, YU, Peng; c/o Nanyang Technological University, 50 TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, Nanyang Avenue, Singapore 639798 (SG). WANG, Qijie; EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, c/o Nanyang Technological University, 50 Nanyang Av- MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, enue, Singapore 639798 (SG). LIU, Zheng; c/o Nanyang TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, Technological University, 50 Nanyang Avenue, Singapore KM, ML, MR, NE, SN, TD, TG). 639798 (SG). - = — = = (54) Title: CHALCOGENIDE FILM, DEVICE INCLUDING, AND METHOD OF FORMING THE SAME FIG. 16A Layer -;‘ dependence '; • I.,. ‘ : , \ -s ,,, , , * 4iN ,,, v.,. , \$.. ,•:„\ .. ... 4 = = = = — _ = = , — , 4• ..,,I,',. 1 / 4 „...... , .4. „ ‘;',z,%,,,,, , , , \ a ,lw • \.,.•*.. .\4‘ , , a, vk.e. , ,,,. , :vw ',... v. • , .•.A .,, 4.:W Layer Layer dependence' '' ''•.' ' dependence = — = — = Mono'ayer B ayer In layer Defect Defect induced induced : The invention relates to a chalcogenide film comprising a noble metal chalcogenide material having a formula MCx. may represent a noble metal, C may represent a chalcogen, x may be any one positive value equal to or more than 1.4 and less than The chalcogenide film may be configured to generate electrons and holes upon light incident on the chalcogenide film. A method producing a chalcogenide fil m with increased vacancy or defect is provided, wherein increasing vacancies or defects may lead to in bandgap and enhance absorption at wavelength range such as mid-infrared. Said chalcogenide film is used in a device photodetector or a solar cell. *1: decrease c;;;;) including 1-1 IN en \" (57) ll• M I I' 2. 0 -----, of 1-1 ei O [Continued on next page] WO 2018/044237 Al MIDEDIMOMMIDIRMENNHOEHMENHHEEM# Published: — with international search report (Art. 21(3))