Patent EA-003164-B1 (EA)
Title: Quantum-size electronic devices and operating conditions thereof
IPC: H01L51/00
Filed: 1999-12-29
Abstract: 1. The process of operating a quantum-size electronic device comprising applying the electric field in the working range of strengths to the device comprising at least one cluster and the electrodes connected to the said cluster through a tunnel-transparent gap, characterised in creating resonance conditions for the formation of ring electrons, for which purpose the field control strength at one cluster is applied in the range Emin <= E <= EMAX, 1.37X10<5>B/cm <= E <= 1.494X10<6>V/cm wherein Emin= me<2>alpha<5>c<3> /2eh = 1.37x10<5>B/cm, Emax= Emin/4pialpha=1.494x10<6>V/cm; h=h/2pi is the Planck's constant; me is the electron mass; e is the electron charge; alpha = 1/137036 is the fine structure constant; c is the light speed, therewith the cluster has at least one distinguished size within the interval from 7.2517 nm to 29.0068 nm. 2. The quantum-size electronic device for realizing the process according to claim 1, comprising at least one cluster and the electrodes connected to said cluster through a tunnel-transparent gap, characterised in that the cluster has at least one distinguished size securing creation of resonance conditions for the formation of ring electrons within the interval 8.01 nm <= r <= 29.0068 nm, the thickness of the tunnel-transparent gap being not more than 7.2517 nm, the spacing between the electrodes being not more than 7.2517 nm. 3. The device according to claim 2, characterised in that the said cluster is made of material selected from the group comprising such materials as semiconductor, conductor, superconductor, high molecular organic substance. 4. The device according to claim 2, characterised in that the cluster is made in the form of a cavity having a sheath of a tunnel-transparent layer. 5. The device according to claim 2, characterised in that the cluster has a centrally symmetric form. 6. The device according to claim 2, characterised in that the cluster is made extended and has a distinguished cross-sectional size within the interval 14.5034 nm <= r <= 29.0068 nm. 7. The device according to claim 6, characterised in that the cluster is made extended along the axis and has a regular structure with a period within the interval 7.2517 nm <= r <= 29.0068 nm. 8. The device according to claim 2, characterised in that a plurality of clusters are regular located at least in one layer, the interspaces between clusters being tunnel- transparent and not exceeding 7.2517 nm. 9 The device according to claim 2, characterised in that at least one cluster is connected through a tunnel-transparent gap to at least three electrodes, at least one of which is a control electrode. 10. The device according to claim 2, characterised in that the electrodes are made of conductor or/and semiconductor, or/and superconductor or/and conductive organic materials. 11. The device according to claim 2, characterised in that the clusters with tunnel-transparent gaps are integrated into groups to form one-dimensional or/and two-dimensional or/and three-dimensional structures. 12. The device according to claim 11, characterised in that clusters with tunnel-transparent gaps are integrated into groups by means of the reciprocal location of discrete electrodes. 13. The device according to claim 11, characterised in that clusters with tunnel-transparent gaps are integrated into groups by means of reciprocal location of discrete electrodes and the form thereof. 14. The device according to claim 11, characterised in that clusters with tunnel-transparent gaps are integrated into isolated spatial groups that are connected to corresponding electrodes. 15. The device according to claim 2, characterised in that the electrodes are made of conductor and have a cross-sectional dimension not less than 7.2517 nm. 16. The device according to claim 2, characterised in that the electrodes are made of the material having a metal- semiconductor phase transition and/or superconductor, said electrodes have a cross-sectional dimension not less than 14.5034 nm.. 17. The device according to claim 2, characterised in that a cluster or a group of clusters with tunnel-transparent gaps are connected to at least two control electrodes, a set of such clusters with electrodes forming a storage cell matrix. 18. The device according to claim 2, characterised in that two or more clusters with tunnel-transparent gaps are connected to supply electrodes through at least one resistive layer and/or additional layer of clusters with tunnel-transparent gaps. 19. The device according to claim 18, characterised in that two or more clusters with tunnel-transparent gaps are connected to supply electrodes and integrated in a group in the form of one layer of clusters mutually contacting through tunnel-transparent gaps of clusters, one or more clusters being connected to control output electrodes through tunnel-transparent gaps, and the other cluster or clusters being connected through tunnel-transparent gaps to output electrodes that are the output of the gate "OR". 20. The device according to claim 18, characterised in that two or more clusters with tunnel-transparent gaps are integrated in a group in the form of a one-dimensional series chain, the even elements of the said chain are connected to the first supply electrode through resistive layers and/or through the layers of clusters with tunnel-transparent gaps, and the odd elements are connected to the second supply electrode through resistive layers or through the layers of clusters with tunnel-transparent gaps, said odd elements forming a logical shift register. 21. The device according to claim 2, characterised in that two or more clusters with tunnel-transparent gaps are connected to supply electrodes and integrated in a group in the form of one layer, one or more clusters are connected to control input electrodes through tunnel-transparent gaps, the other cluster or more clusters are connected to control output electrodes through tunnel-transparent gaps, the input and output clusters are interconnected by additional electrodes having the same thickness and width, said electrodes can be connected to one or more clusters of the next group. 22. The device according to claim 2, characterised in that two or more clusters, are connected to supply electrodes through tunnel-transparent gaps and said clusters are integrated in a group in the form of one layer, one or more clusters are connected through tunnel-transparent gaps to control input electrodes, and the other cluster or clusters are connected to the output electrode through tunnel-transparent gaps, input and output clusters are joined together by additional electrodes contracted at one side in the signal direction, said electrodes can be connected to one or more clusters of the next group. 23. The device according to claim 2, characterised in that the input voltage is supplied directly through one or more control electrodes connected to cluster through the tunnel-transparent gap, the cluster is connected to the supply voltage through a resistive element and/or a cluster element with tunnel-transparent gaps, and the junction point is connected to the output electrode that is the output of the gate "NOT". 24. The device according to claim 2, characterised in that one or two clusters with tunnel-transparent gaps are connected to the supply voltage through a resistive layer or a layer of clusters with tunnel-transparent gaps, said one or two clusters form isolated groups united by one common output electrode, each isolated group of clusters is connected to one or more control input electrodes, the number of clusters with tunnel-transparent gaps in each group determines the weight function according to the input signal and forms a neurone-type logical component - a weight summator. 25. The device according to claim 2, characterised in that one or more clusters with tunnel-transparent gaps are connected to at least two control electrodes, at least one of which is a light-transparent electrode, the intervals between clusters are filled with a photosensitive material and a set of such clusters forms a photosensitive matrix. 26. The device according to claim 2, characterised in that one or more layers of clusters with tunnel-transparent gaps are connected to at least two electrodes, at least one of which is a light transparent electrode, the intervals between the clusters are filled with an optically active material, the set of such clusters with filled gaps forming a display screen. 27. The device according to claim 2, characterised in that one or more layers of clusters with tunnel-transparent gaps are connected to at least two electrodes, at least one of which is a grid transparent for electrons, the intervals between clusters are filled with the material having a low work function of electron in vacuum, forming thereby an electron-emitting source. 28. The device according to claim 2, characterised in that one or more layers of clusters are connected to at least two distributed electrodes made in the form of a resonator, forming thereby a high-frequency generator with a maximal boundary frequency determined by the formula f <= MEALPHA<4>c<2>/h = 3.5037x10<11> Hz, wherein me is the electron mass; alpha=1/137.036 is the fine structure constant; c is the light speed; h is the Planck's constant. 29. The device according to claim 2, characterised in that one or more clusters with tunnel-transparent gaps are connected to the current source by electrodes or by direct contacting, at least one of the clusters is connected to the output electrode, allowing thereby to form a standard voltage source with level U= nalpha<3>c<2>me/2e= nx0.09928 V, wherein n is a number of clusters connected in series; alpha is the fine structure constant; c is the light speed; me is the electron mass; e is the electron charge. 30. A quantum-sized electronic device comprising electrodes and located between them a layer of the material having a metal-semiconductor phase transition, ch