Patent SG-11201903378X-A (SG)
Title: Selective etch rate monitor
Inventor: KRAUS PHILIP ALLAN
IPC: H01L21/67
Filed: 2017-10-16
Abstract: c o ee (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 17 May 2018 (17.05.2018) WIPO I PCT Iiiimmommionotiolooluoinoloinnom oimIE (10) International Publication Number WO 2018/089175 Al (51) International Patent Classification: HO1L 21/67 (2006.01) H01L 21/3065 (2006.01) (21) International Application Number: PCT/US2017/056786 (22) International Filing Date: 16 October 2017 (16.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/351,437 14 November 2016 (14.11.2016) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (72) Inventors: KRAUS, Philip Allan; 1006 Broadway Av- enue, San Jose, California 95125 (US). FRANKLIN, Tim- othy J.; 671 Regas Drive, Campbell, California 95008 (US). (74) Agent: BERNADICOU, Michael A. et al.; Schwabe, Williamson & Wyatt, P.C., 1211 SW 5th, Ste 1900, Port- land, Oregon 97204 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: SELECTIVE ETCH RATE MONITOR 124 (57) : Embodiments include areal time etch rate sensor and meth- ods of for using areal time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The 11 0 resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first elec- trode is not covered by the sacrificial layer. In an embodiment, the conduc- tive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial 122 layer. —105 108 FIG. 1 e go e ® ge ®c re 0 c g ® o ® go o ceco cc cocce 10001:101:101:10001:11:10000000Q0C c0 D e °e 0 ® 0 9 0 e 0 0 c 0 0 0 0 0 e e0 De e o e 0 0 o e ®®e 0 9 0 e g g \"--126 124 _0 c- - 0 c oo e eo 0 00 0 00 e e OG 0 0 0 0 GO- — 126