baber/WOPTO huggingface dataset:
Patent TW-379463-B (TW)
Title: High frequency electrical connector
Inventor: GRABBE DIMITRY
IPC: H01R12/50
Filed: 1997-07-31
Granted: 2000-01-11
Abstract: A connector (10) is disclosed for interconnecting circuitry (12, 16) of two circuit boards (14, 18) which carry relatively high frequency signals. The receptacle connector (20) includes shield plates (56) between each adjacent pair of signal contacts (58) and the mating plug connector (24) includes a central elongated ground plate (136) that electrically engages each of the shield plates (56). The ground plate (136) includes a plurality of leads (142) along its length that engage ground pads on the circuit board (18). The plug connector (24) includes an outer shield (146) that substantialy surrounds the plug connector (24) and includes leads (148) that are attached to the leads (142) of the elongated ground plate (136).
Patent TW-336334-B (TW)
Title: Aperture for charged beam plotter and method of manufacturing thereof
Inventor: ITOU KATSUSHI
IPC: H01J37/09
Filed: 1997-09-04
Granted: 1998-07-11
Abstract: A sort of aperture for charged beam plotter, making the drawing formed by laser beam be reproduced on the aperture carrying laser beam on the semiconductor substrate of a plotter, including: the washer of said aperture having the center in thicknesswise making both sides the same.
Patent TW-381101-B (TW)
Title: Acrylic flexible light pipe of improved thermal stability
Inventor: ILENDA CASMIR STANISLAUS
IPC: B29C48/10
Filed: 1997-10-08
Granted: 2000-02-01
Abstract: Acrylic light pipe as described in Bigley et al., U.S. Patents 5,406,641 and 5,485,541 has adequate thermal stability for many purposes. It has been found that improved thermal stability, as reflected in color formation, can be imparted by adjusting the polymerization conditions to produce the uncured core polymer of the core/clad construction with a much reduced vinyl content, preferably below 0.5 vinyl groups/ 1000 monomer units.
Patent TW-371733-B (TW)
Title: Memory module
Inventor: IKEDA KOUICHI
IPC: H01L23/538
Filed: 1997-11-10
Granted: 1999-10-11
Abstract: It is the object of the present invention to provide a small sized memory module with high capacity that is easy to mount to various memory boards and mother boards. A bare chip (1) is cut out separately from a semiconductor wafer for memories. A memory module (10) is composed of four bare chips (1) that is mounted on a module substrate (2) by COB (chip on board) method. A pad (4) is on the module substrate (2), and near the center along the long side of the module substrate (2), there is a line formed of the pads (4). The bare chips (1) are mounted two at a time both side of the pads (4). Each of the bare chip (1) has the pads (3) that are formed in line along its center line, the pads (3) and Pads (4) are connected with a bonding wire (5), the bonding wire (5) and the bare chip (1) are masked with a resin (6). An output terminal (8) on the outside face of the module substrate (2) is for mounting to the memory board and motor board by LCC (leadless chip carrier) method.
Patent TW-367646-B (TW)
Title: Micro-generator device for clock
Inventor: SCHAFROTH KONRAD
IPC: G04C10/00
Filed: 1997-12-23
Granted: 1999-08-21
Abstract: A kind of micro-generator device for clock which comprises a rotor with two disks, a stator with three cascaded coil that each disk contains six permanent magnet with alternating south/north poles and each coil is mounted on the component with electric circuit so that the circuit can control the speed of generator based on the signal frequency of generator output and the reference frequency generated from a certain crystal oscillator and to change the loading of generator by a variable resistor. The mechanism of the micro-generator can make the peak voltage of generated signal to be as high as possible and the inertia and friction force required for the space of rotor as low as possible. So, each coil of the rotor is mounted on the component and asymmetrical to the axial line of rotor. Such kind of coil has the maximum surface for easy installation of the micro-generator.
Patent TW-421640-B (TW)
Title: A multi-apertured microbe removing object and it's manufacture method
Inventor: SHIAU YAN-KUEN
IPC: A61L9/00
Filed: 1998-01-19
Granted: 2001-02-11
Abstract: This invention is about a multi-apertured object capable of microbe removing and it's manufacture method. The object contains anti-microbe compositions, such as four degrees amide salt and silver. Because of the anti-microbe compositions form strong bonds and/or adhesion with the multi-apertured microbe removing object, the active compositions would not lost and the anti-microbe effect would be kept for a long time.
Patent TW-363019-B (TW)
Title: A floor structure of a vehicle
Inventor: HATSUSHI MATSUHIRO
IPC: B60K13/02
Filed: 1998-03-13
Granted: 1999-07-01
Abstract: In a floor structure of a vehicle comprising: left and right side sills; a substantially flat floor panel extending between the left and right side sills; and a cross member for connecting the left and right side sills, the cross member comprises: left and right upper members which extend inwardly from the left and right side sills, respectively, and attached to a top surface of the floor panel with their opposing inward ends spaced from each other; and a lower member extending laterally across a part of a lateral length of the vehicle and attached to an under surface of the floor panel. In the above floor structure, an open space formed beside the lower member can accommodate external piping under the floor panel, and the floor surface can be substantially flat by placing front seats over the upper members. Thus, a floor structure is achieved in which the floor surface is substantially flat and the floor is placed at a lower position. The upper and lower members connected via the floor panel can ensure sufficient rigidity of the floor structure.
Patent TW-510905-B (TW)
Title: Cationic water-soluble polymer, monomer and method for determining the efficiency of a water-soluble polymeric treating agent
Inventor: MURRAY PATRICK G
IPC: C07D311/16
Filed: 1998-03-21
Granted: 2002-11-21
Abstract: A cationic water-soluble polymer comprising from 0.001 to 10 mole percent of a repeating mer unit represented by the formula wherein a is an integer of from 1 to 10. R1 is selected from the group consisting of hydrogen and methyl groups. R2 and R3, are methyl groups, fluor is a fluorescing moiety and X is selected from the group consisting of chloride, iodide and bromide ions and wherein the polymer also contains from 90 to 99.999 mole percent of a remaining portion of randomly distributed vinylic mer units selected from at least one of the monomer groups consisting of acrylamide, acrylic acid, methacrylamide, vinyl acetate, dimethylaminoethyl acrylate methyl chloride quaternary salt, dimethylaminoethyl acrylate benzyl chloride quaternary salt diallyldimethyl ammonium chloride, N-vinyl formamide, dimethylaminoethyl methacrylate methyl chloride quaternary salt, dimethylaminoethyl methacrylate benzyl chloride quaternary salt, methacrylamidopropyl trimethyl ammonium chloride and acrylamidopropyl trimethyl ammonium chloride. Preferably, fluor is selected from the group consisting of 1-(substituted)naphthalene, 9-(substituted)anthracene, 2-(substituted)quinoline monohydrochloride, 2-(substituted)benzimidazole, 5-(substituted)fluorescein, 4-(substituted)coumarin and 3-(substituted)-6,7-dimethoxy-1-methyl-2(1H)-quinoxazolinone. Most preferably, fluor is a coumarin derivative. Monomers of the structures described above are also disclosed. Moreover, a method for determining the efficiency of water-soluble polymeric treating agents utilizing the above-mentioned polymers is also disclosed.
Patent TW-497142-B (TW)
Title: Method and device for monitoring plasma furnace by comparing the plasma intensity
Inventor: HUANG YUAN-GUO
IPC: H01L21/00
Filed: 1998-03-25
Granted: 2002-08-01
Abstract: The present invention relates to a method and a device for monitoring a plasma furnace by comparing the plasma intensity. The method comprises using a plasma furnace for performing a plasma process which generates a radiation with a specific wavelength and intensity; using a detection device to detect the radiation intensity having a specific wavelength and generate an output signal; using a comparison device for comparing the output signal with a normal plasma intensity value; and using an indication device to indicate an abnormal status when the output value of the comparison device exceeds a preset threshold.
Patent TW-388071-B (TW)
Title: Apparatus for improved remote microwave plasma source for use with substrate processing systems
Inventor: GUO JI-TAI
IPC: H01L21/302
Filed: 1998-04-17
Granted: 2000-04-21
Abstract: An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.
Patent TW-364263-B (TW)
Title: Active pixel sensor unit having common readout structure
Inventor: WANG YI-TANG
IPC: H01L27/146
Filed: 1998-05-14
Granted: 1999-07-11
Abstract: An active pixel sensor unit having common readout structure which primarily uses selection transistor time-sharing for control switch and properly controls the voltage of bias power supply to attain the object of one readout circuit for every two pixels without the need for conventional output selection transistor. Said active pixel sensor unit having common readout structure comprises: a first photoelectric diode, and a first NMOS transistor, the anode of said first photoelectric diode being coupled to a ground reference, while the cathode being connected to the source electrode of said first transistor; a second photoelectric diode, and a second NMOS transistor, the anode of said second photoelectric diode being coupled to a ground reference, while the cathode being coupled to the source electrode of said second transistor, the gate electrode of said second transistor being coupled to a second selection signal; and a third NMOS transistor and a fourth NMOS transistor, the drain electrode of said first and second transistors being coupled to the source electrode of said third transistor and gate electrode of said fourth transistor, while the drain electrode of said third and fourth transistors being coupled to a variable bias power source, the gate electrode of said third transistor being coupled to a reset signal. As such, the switching between said first and second signals and reset signal, in coordination with changing the potential of said bias power source will allow the readout of ray intensity sensed by said first and second photoelectric diodes from the source electrode of said fourth NMOS transistor respectively.
Patent TW-367467-B (TW)
Title: Non-contact IC card and manufacturing method thereof
Inventor: NISHIKAWA YOSHIKI
IPC: G06K19/02
Filed: 1998-05-19
Granted: 1999-08-21
Abstract: A kind of non-contact IC card which is to bury the annular coil for antenna and the IC chip in a thin plate made of foamed chloroethylene which is suitable for the burying of annular coil for antenna and IC chip. The method can prevent concavities occurrence on the surface of foamed thin plate and also with excellent smoothness. There is a covering plate attached with foamed thin plate by thermal welding. The covering plate is better made of chloroethylene.
Patent TW-538041-B (TW)
Title: Triazole compound with selective affinity for the dopamine d3 receptor and pharmaceutical composition thereof
Inventor: STARCK DOROTHEA
IPC: C07D401/12
Filed: 1998-07-04
Granted: 2003-06-21
Abstract: Triazole compounds of the following formula: (I) where Ar1, A, B and Ar2 have the meanings given in the description, possess a high affinity for the dopamine D3 receptor and can therefore be used for treating diseases which respond to dopamine D3 ligands.
Patent TW-408230-B (TW)
Title: Enhanced-light-collection-efficiency sensor
Inventor: BOHN DAVID D
IPC: H01L31/0232
Filed: 1998-08-04
Granted: 2000-10-11
Abstract: A microlens (202) and microlens array which collect light incident upon image sensor pixels (201, 301, 401). The microlens comprises two parts one (206, 306, 406) which collects light from the cross-sectional area lying over the light-detection area and the second (203, 303, 403) which collects light from the corner areas of the pixel lying outside the cross-sectional area of the light-detection area. Light from each of the two areas is refracted onto an associated light-detection area (212, 312, 412). Essentially all of the light incident upon the pixel can thus be collected and refracted to the photosensitive area.
Patent TW-557297-B (TW)
Title: Rapamycin analogs having immunomodulatory activity, and pharmaceutical compositions containing same
Inventor: MOLLISON KARL W
IPC: A61P31/10
Filed: 1998-09-08
Granted: 2003-10-11
Abstract: A compound having formula (I) or a pharmaceutically acceptable salt or prodrug thereof, is an immunomodulatory agent and is useful in the treatment of restenosis and immune and autoimmune diseases. Also disclosed are cancer-, fungal growth-, restenosis-, post-transplant tissue rejection- and immune- and autoimmune disease-inhibiting compositions and a method of inhibiting cancer, fungal growth, restenosis, post-transplant tissue rejection, and immune and autoimmune disease in a mammal.
Patent TW-432516-B (TW)
Title: Semiconductor device and method of fabricating same
Inventor: SEKINE MASAHIRO
IPC: H01L21/266
Filed: 1998-09-14
Granted: 2001-05-01
Abstract: To do without injecting nitrogen for preventing boron from penetrating from a gate electrode into semiconductor substrate. In a gate electrode 30, a gate insulation film 31, a conductive film 32N and a conductive file 32 are sequently formed on a main face of substrate 10. The conductive film 32N contains nitrogen and is formed by being annealed in the ambient which does not contain hydrogen. Next, the gate insulation film 31 and the conductive film 32 are defined to form a gate electrode 30 at one time, and in the formation region of a PMOS transistor, boron is injected to the substrate 10 by the use of the gate electrode 30 as a mask so that a source region 5 and a drain region 6 are formed.
Patent TW-382051-B (TW)
Title: Liner material of branch pipes and manufacturing method for pipe liner
Inventor: KAMIYAMA TAKAO
IPC: F16L58/10
Filed: 1998-10-06
Granted: 2000-02-11
Abstract: The invention is to provide an economical liner material of branch pipes which can save the manufacturing cost with stable quality and for mass production and without generating waste during usage. Employing one end of a pipe-like resin adsorbing material immersed with uncured thermoset resin to fold back from outside and split the edges; nipping split portion with the eaves-forming components as sandwich-like and forming the eaves at one end of pipe-like resin adsorbing material to construct the branch pipes liner material. According to this invention, the branch pipes liner material is formed by pipe-like resin adsorbing material and eaves-forming components as a whole and forming the eaves at one end so that the eaves-forming components and pipe-like resin adsorbing material could be independent and mechanically mass produced so as to reduce the manufacturing cost of such eaves forming components and also for the branch pipes liner material.
Patent TW-420893-B (TW)
Title: Circuit breaker
Inventor: LAM SHEIR-CHUN
IPC: H02H3/253
Filed: 1999-01-25
Granted: 2001-02-01
Abstract: A circuit breaker (10) for use in a power/load circuit formed by a three-phase AC power supply (11) and a load (12) connected to the power supply (11) by means of three live power lines (R-R', S-S' & T-T'). The circuit breaker (10) comprises a tripping circuit (60) including switches (SW1) connected in series with the respective power lines facing the power supply (11), a transformer (T1) having at least three balanced primary windings (P1 to P3) connected subsequently in series along the respective power lines and a secondary winding (S1), and a voltage comparator (50) connected to the secondary winding (S1) for comparing a voltage induced in the transformer (T1) with a reference voltage and then in the event of a leakage fault providing a tripping signal for the tripping circuit (60) to open the switches (SW1). A circuit path (X) is provided, which has a combined voltage sensor/comparator (30) and extends across opposite sides and externally of the transformer (T1) for sensing and comparing two phase-to-phase voltages with each other and then in the event of a voltage imbalance fault simulating a leakage fault condition for the transformer (T1) to detect and the voltage comparator (50) to provide a tripping signal.
Patent TW-495631-B (TW)
Title: Method and system for inspecting polycrystalline semiconductor film
Inventor: GOTO YASUMASA
IPC: G01N21/21
Filed: 1999-02-03
Granted: 2002-07-21
Abstract: Standard samples including at least a polycrystalline semiconductor film are produced by the energy beam annealing method. Dependencies on wavelength of refractive index and damping coefficients of standard samples are measured by means of a spectral ellipsometer, and grain sizes are measured to be quantified. An estimated sample consisting of a polycrystalline semiconductor film is produced by means of the energy beam annealing method. A dependency on wavelength of a refractive index and a damping coefficient of the estimated sample is measured to be compared with the results of the standard sample. Thus, the optically measured results can be quantified, so that it is possible to accurately measure a mean grain size of a polycrystalline silicon of a sample to be estimated, in a short time of about 5 seconds to calculate mobility to accurately select non-defective from defective in a short time.
Patent TW-I239972-B (TW)
Title: Continuous process for manufacturing silicone copolymers
Inventor: AUSTIN PAUL E
IPC: C08G77/38
Filed: 1999-04-12
Granted: 2005-09-21
Abstract: Disclosed is a continuous process for producing silicone copolymers using a series of at least one stirred-tank reactor, the last of which reactor in said series has crude product stream feeding into at least one plug flow reactor, wherein this crude product stream is sufficiently homogeneous such that this stream which undergoes further reaction in the plug flow reactor does not undergo phase separation.
Patent TW-554259-B (TW)
Title: Correction method of optical proximity
Inventor: LIN JIN-LUNG
IPC: G03F9/00
Filed: 1999-04-23
Granted: 2003-09-21
Abstract: The present invention provides a correction method for optical proximity, which includes the following steps: first, providing a main pattern and checking the critical dimensions of the main pattern; and, when the critical dimensions of the main pattern is smaller than about 2.5 times of the wave length of the exposure light source, adding a corner serif and a Hammerhead at the corners and edges of the main pattern; then, when the critical dimensions of the main pattern is smaller than the wave length of the exposure light source, adding an assist feature on the pattern.
Patent TW-407383-B (TW)
Title: Manufacture method of field effect transistor
Inventor: CHEN DUNG-PO
IPC: H01L29/772
Filed: 1999-04-27
Granted: 2000-10-01
Abstract: A manufacture method of field effect transistor is disclosed, which first provides a substrate with a gate structure, and forms a linear oxide and a first spacer closely neighboring to the lateral side of the gate electrode. Next, an epitaxial silicon layer is formed on the substrate of two lateral sides of the first spacer, and a super shallow junction region is formed on the substrate of the lower portion of the epitaxial silicon layer. Next, there is formed an oxide and a second spacer neighboring to the first spacer. A source/drain region is formed on the lower portion of the super shallow junction region. A part of the epitaxial silicon layer is transformed into a silicide layer, so as to complete the process of field effect transistor.
Patent TW-399133-B (TW)
Title: Pipe joint
Inventor: INOUE HIROSHI
IPC: F16L19/08
Filed: 1999-07-27
Granted: 2000-07-21
Abstract: This is a pipe joint comprising the pipe joint body and cylindrical fastening ring. The opening end of the pipe joint body is formed into tapered female thread. The cylindrical fastening ring is equipped with the male thread mating with the tapered female thread and plurality of small disk connective. The small disk connective is partly protruding the outer peripheral side while partly protruding the inner peripheral side, along the male thread, and comprises 2 or 3 continuously embedded small disk for pipe fastening use.
Patent TW-440864-B (TW)
Title: Bi-directional sense amplifier stage for memory datapath
Inventor: SU JASON
IPC: G11C7/10
Filed: 1999-08-03
Granted: 2001-06-16
Abstract: A sense amplifier (SA) stage includes a single SA used to selectively sense signals from both directions in a datapath. The SA is connected to detect the differential signal present at a pair of sense nodes on the datapath. A first pair of switches is inserted in the datapath between the sense nodes and a first transfer port (FTP). A first equalizer is connected to the differential lines at points between the first pair of switches and the FTP. A second pair of switches is inserted in the datapath between the sense nodes and a second transfer port (STP), with a second equalizer connected to the differential lines between the second pair of switches and the STP. Before transferring data from the FTP to the STP, the first equalizer is turned on while the first pair of switches is turned off. While the data is being developed at the FTP,  the first equalizer is turned off, the first pair of switches is turned on, the second pair of switches is off, and the second equalizer is on. Then the first pair of switches is turned off, the first equalizer is turned on, and the SA is enabled. While the SA is enabled, the second pair of switches is turned on and the second equalizer is turned off. The SA senses and drives the data signal to the STP. To transfer data from the STP to the FTP, this same sequence is performed, replacing ""first"" for ""second"" and vice versa.
Patent TW-I229697-B (TW)
Title: Microbial production of actinol
Inventor: SHIMIZU SAKAYA
IPC: C12P41/00
Filed: 1999-08-19
Granted: 2005-03-21
Abstract: A process for the manufacture of (4R,6R)-4-hydroxy-2,2,6-trimethylcyclohexanone comprises contacting (6R)-2,2,6-trimethylcyclohexanedione with a microorganism which is selected from the group consisting of microorganisms of the genera Cellulomonas, Corynebacterium, Planococcus and Arthrobacter and which is capable of the selective asymmetric reduction of (6R)-2,2,6-trimethylcyclohexanedione to (4R,6R)-4-hydroxy-2,2,6-trimethylcyclohexanone, and recovering the resulting (4R,6R)-4-hydroxy-2,2,6-trimethylcyclohexanone from the reaction mixture. The selective asymmetric reduction can be effected in the presence of a co-factor such as nicotinamide adenine dinucleotide (NAD), nicotinamide adenine dinucleotide phosphate (NADP), or said co-factor with glucose and glucose dehydrogenase (GDH), and/or in the presence of a surfactant. The product is useful for the synthesis of carotenoids such as zeaxanthin.