baber/WOPTO huggingface dataset:
Patent JP-2011248840-A (JP)
Title: Coordinate information update device and coordinate information generation device
Inventor: OKI EIJI
IPC: G06F3/041
Filed: 2010-05-31
Abstract: PROBLEM TO BE SOLVED: To easily perform the processing with respect to the coordinate value of the three-dimensional space through the two-dimensional operation information.SOLUTION: An object is displayed on an image plane of a two-dimensional coordinate system based on the xyz-coordinate value in a three-dimensional coordinate system of the object. The operation information of the two-dimensional coordinate system relating to the object is received from the input device. It is judged whether or not the operation information follows the predetermined rule. When the operation information does not follow the predetermined rule, the xy-coordinate value of the object is updated according to the operation information. When the operation information follows the predetermined rule, the z-coordinate value of the object is updated according to the operation information.
Patent JP-2011253585-A (JP)
Title: Write-in control method of multiple data
Inventor: YAMAGUCHI YUKARI
IPC: H04N7/173
Filed: 2010-06-02
Abstract: PROBLEM TO BE SOLVED: To provide a control technique for preventing a fragmentation of data such that the data of two files are alternately recorded by 1.5 MB unit when two programs are simultaneously video-recorded, since an existing retrieval of idle capacity of video-recording area starts from a beginning of a disk.SOLUTION: The problem is solved by making a predetermined unit of recording capacity larger, which is called as an allocation unit. Also, it is solved by making the allocation unit variable in accordance with a capacity of video-recording program. The present invention secures the video-recording area (suppressing the video-recording of other programs) in accordance with data amount of the video-recording program before the video-recording is started.
Patent JP-2011254012-A (JP)
Title: Semiconductor and semiconductor relay using the same
Inventor: OKADA HIROSHI
IPC: H01L27/088
Filed: 2010-06-03
Abstract: PROBLEM TO BE SOLVED: To suppress flow of a leak current when a high voltage is applied.SOLUTION: At least one transistor cell is provided in an epitaxial growth layer 2 formed on a surface of a first conduction type SiC (silicon carbide) substrate 1, and the transistor cell has a second conduction type well region 3 formed in the epitaxial growth layer 2, a source region 4 comprising a first conduction type region formed in the well region 3, a gate electrode 7 formed through a gate insulating film 6, a source electrode 5 formed so as to come into contact with the source region 4, and a drain electrode 9 formed at a second surface side of the SiC substrate 1. A p-type breakdown voltage holding region 3p which adjacently surrounds the well region and is insulated from both the gate electrode 7 and the source electrode 5 is provided at the outside of the outermost cell of the transistor cells.
Patent JP-2011251328-A (JP)
Title: Casting method
Inventor: WATANABE NAOMI
IPC: B22D23/00
Filed: 2010-06-03
Abstract: PROBLEM TO BE SOLVED: To provide a technology of shortening a cycle time associated with casting in a gravity casting method.SOLUTION: The casting method is executed by using a mold having: a main sprue runner 19 elongated downward; a plurality of branch sprue runners 22 almost horizontally branching off from the main sprue runner 19; cavities arranged at the leading ends of the branch sprue runners 22 and horizontally elongated; and a gas injecting mechanism 91 injecting an inert gas into a midway point of the main sprue runner 19 from the outside. The casting method includes: a teeming step of teeming to the cavities via the main sprue runner 19 and then the branch space runners 22; and a gas injection step of injecting the inert gas into the main sprue runner 19 after solidification of molten metal filled in the cavities and discharging the inert gas to the outside from a sprue gate 29 of the main sprue runner 19.
Patent JP-2011035376-A (JP)
Title: Field effect transistor and method of manufacturing the same
Inventor: ABE YUKIKO
IPC: H01L21/336
Filed: 2010-06-09
Abstract: <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a field effect transistor capable of suppressing damage of an active layer in a patterning process by etching, and the field effect transistor which diminishes the damage, in the field effect transistor which activates an oxide semiconductor mainly composed of magnesium (Mg) and (In) indium as the active layer.  <P>SOLUTION: The field effect transistor has a gate electrode, a source electrode, and a drain electrode. It also includes the active layer forming a channel region. The active layer is constituted by containing the oxide semiconductor with the magnesium (Mg) and the indium (In) serving as main components. The method of manufacturing the same includes a film-forming step of forming an oxide-semiconductor film serving as the active layer, a patterning step of patterning the oxide film by means of the step including etching to form the active layer, and a step of thermally processing the active layer later than the patterning step.  <P>COPYRIGHT: (C)2011,JPO&INPIT
Patent JP-2012002072-A (JP)
Title: Exhaust flow passage control valve
Inventor: MATSUMOTO TAKASHI
IPC: F01N1/08
Filed: 2010-06-14
Abstract: PROBLEM TO BE SOLVED: To allow a sufficient exhaust flow rate required for a bypass flow passage to flow by sufficiently opening a spiral valve element even when engine rotation speed is very high, and surely preventing the output of an engine from decreasing due to a rise of exhaust pressure.SOLUTION: An exhaust flow passage control valve includes: a substantially cylindrical housing 20 communicating with the bypass flow passage for the flow of exhaust gas from the engine; the spiral valve element 30 fixed with the vicinity of a peripheral edge abutting against the housing 20, opening and closing a flow passage in the housing 20; a valve spring 40 comprising a torsion coil spring always urging the valve element 30 in a direction for closing; and a valve spring holder 50 firmly fixed to the valve element 30 and holding a coil part 41 of the valve spring 40. Arm parts 42 of the valve spring 40 are inserted in through holes 24 of spring receivers 23 provided on the housing 20, and bent parts 422 inclining to approach a housing 20 side are provided on end sides of the arm parts 42.
Patent JP-2012001938-A (JP)
Title: Flat reciprocating type parking device
Inventor: YAMANE KEIZO
IPC: E04H6/18
Filed: 2010-06-15
Abstract: PROBLEM TO BE SOLVED: To provide a flat reciprocating type parking device capable of reducing construction cost and shortening queuing time for loading and unloading a vehicle.SOLUTION: A flat reciprocating type parking device comprises: a hoist way 10 to move a pallet 80 up and down between a loading/unloading section 2 and storage sections 11 and 12; a carrier truck 15 which loads the pallet 80 from the hoist way 10 at the storage sections 11 and 12; and a transport way 13 to transport the carrier truck 15 to pallet storage positions at the storage sections 11 and 12. The flat reciprocating type parking device also has four lifting bodies 31 independently positioned at four corners of the hoist way 10 to move up and down the pallet 80, and a lift drive device 30 to synchronously move up and down the four lifting bodies 31 positioned at the four corners in the hoist way 10. During standby time until loading/unloading operations of the storage sections 11 and 12, the lifting bodies 31 wait ready at corner-cut regions D at lower parts of the storage section 11 and 12.
Patent JP-2012004373-A (JP)
Title: Semiconductor device and method of manufacturing the same
Inventor: NISHIDA AKIO
IPC: H01L21/8234
Filed: 2010-06-17
Abstract: PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A substrate 1C comprises: an SOI region 1A in which a semiconductor substrate 2, an insulating layer 3, and a semiconductor layer 4 are stacked; and a bulk region 1B including the semiconductor substrate 2. In MISFETs formed on the semiconductor layer 4 in the SOI region 1A, impurities are not introduced into channel regions, whereas in MISFETs formed on the semiconductor substrate 2 in the bulk region 1B, impurities are introduced into channel regions. When the MISFETs in the SOI region 1A are formed, ion implantation, channel doping ion implantation, and halo ion implantation for well region formation are not performed, in order that impurities are not introduced into the channel regions of the MISFETs. When the MISFETs in the bulk region 1B are formed, ion implantation, channel doping ion implantation, and halo ion implantation for well region formation are performed.
Patent JP-2012005287-A (JP)
Title: Charger
Inventor: ARADATE TAKAHISA
IPC: H01M10/44
Filed: 2010-06-18
Abstract: PROBLEM TO BE SOLVED: To provide a charger capable of certainly detecting full charging without erroneously detecting the full charging even when a power supply capability of power supply voltage is small.SOLUTION: In the charger which has: a battery voltage detection means 37 for detecting battery voltage of a battery pack 16 having a battery cell 43; and a battery voltage storage means for storing the maximum value of the battery voltage detected by the battery voltage detection means 37, and stops charging as the full charging when the battery voltage drops from the maximum value for a predetermined value, when the charging is stopped before the battery voltage drops from the maximum value for the predetermined value and the charging is restarted after that, the maximum value stored in the battery voltage storage means before restarting the charging is initialized.
Patent JP-2012006689-A (JP)
Title: Elevator device
Inventor: WATABE YASUHISA
IPC: B66B11/00
Filed: 2010-06-23
Abstract: PROBLEM TO BE SOLVED: To provide an elevator device capable of adjusting weight balance between a cage side and a balance weight side in a short time and reducing power consumption during an operation.SOLUTION: An auxiliary weight rope 11 is circulated by elevation of a balance weight 8. Near the connection part of the auxiliary weight rope 11 to the balance weight 8, an auxiliary weight device 12 is attached so as to be elevated and lowered by circulation of the auxiliary weight rope 11. The auxiliary weight device 12 is switchable between attaching to a same direction traveling part 11a moving in the same direction as that of the balance weight 8 of the auxiliary weight rope 11 and an opposite direction traveling part 11b moving in a direction opposite to that of the balance weight 8.
Patent JP-2012009615-A (JP)
Title: Compound semiconductor device and manufacturing method of the same
Inventor: KAMATA YOICHI
IPC: H01L21/338
Filed: 2010-06-24
Abstract: PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same which can suppress a phase difference in potential of a gate electrode.SOLUTION: The compound semiconductor device comprises a substrate, an electron transit layer formed over the substrate, an electron supply layer formed over the electron transit layer, and a plurality of gate electrodes 5g formed over the electron supply layer, and a gate pad 8g to which the plurality of gate electrodes 5g are connected. A gate width of the gate electrode 5g becomes narrower with distance from the gate pad 8g.
Patent JP-2012005440-A (JP)
Title: System toilet for dog
Inventor: MATSUO TAKAYUKI
IPC: A01K1/01
Filed: 2010-06-25
Abstract: PROBLEM TO BE SOLVED: To provide a system toilet for a dog, which can be used without spreading over granules on an upper container and can easily be cleaned.SOLUTION: The system toilet 1 for the dog, which comprises an excrement-receiving container 2 having an excrement-receiving portion 21 capable of receiving excrements, and an upper container 4 having a liquid-permeable bottom surface portion 41 and a side wall portion 42 standing from the peripheral edge of the bottom surface portion 41, and in which a liquid-permeable panel 3 having water absorbability is loaded on the upper surface side of the bottom surface portion 41, is characterized in that the standing angle of the side wall portion 42 from the bottom surface portion is ≥90 degree, and the upper container 4 is formed by an integral molding method without having a joint in the bottom surface portion 41 and the side wall portion 42.
Patent JP-2011037261-A (JP)
Title: Imprint lithography apparatus and method
Inventor: KRUIJT-STEGEMAN YVONNE WENDELA
IPC: B29C59/02
Filed: 2010-06-29
Abstract: <P>PROBLEM TO BE SOLVED: To provide an improved imprint lithography apparatus and a method.  <P>SOLUTION: This imprint lithography apparatus includes: an imprint template holder 22 which is constituted in a manner to hold an imprint template 20; and a plurality of position sensors 28 which are constituted in a manner to measure the variation of the size and/or shape of the imprint template 20, and the position sensors 28 are mechanically separated from the imprint template 20. In addition, the imprint template 20 is used in order to imprint a pattern on a board 34, and the variation of the size and/or shape of the imprint template 20 are measured while the pattern is imprinted on the board 34 by this lithography method.  <P>COPYRIGHT: (C)2011,JPO&INPIT
Patent JP-2012015613-A (JP)
Title: Step attenuating device, testing device using the same, and signal generator
Inventor: TAKEUCHI HIROAKI
IPC: H03H7/25
Filed: 2010-06-29
Abstract: PROBLEM TO BE SOLVED: To provide a step attenuating device capable of realizing a cutoff state without using an outside switch.SOLUTION: A step attenuating device 100 is capable of switching attenuation factors according to a control signal. A plurality of variable attenuators VA is connected in series. Each variable attenuator VA includes a first terminal P1, a second terminal P2, a plurality of paths PT having different attenuation factors, a first switch SW1 capable of connecting the first terminal P1 to one end of any path PT among the plurality of paths PT, and a second switch SW2 capable of connecting the second terminal P2 to another end of any path among the plurality of paths PT. A control part 10 connects the first switch SW1to one of the plurality of paths PT, and the second switch SW2to another one of the plurality of paths PT in the initial stage of variable attenuator VA, when a control signal CNT instructs cutoff of the step attenuating device 100.
Patent JP-2012015622-A (JP)
Title: Portable radio communication terminal
Inventor: MIZUNO SATORU
IPC: G06K17/00
Filed: 2010-06-29
Abstract: PROBLEM TO BE SOLVED: To realize configuration which can adjust radio wave output radiated from an antenna while suppressing an increase of the number of components, increase in the size of device configuration, and increase in power consumption.SOLUTION: A portable radio communication terminal 1 comprises output control means, which includes voltage adjusting means capable of changing offset voltage of a baseband signal output by a signal output means and amplitude adjusting means capable of changing amplitude of the baseband signal output by the signal output means. And the output control means changes the level of a radio wave output from an antenna 40 by adjusting offset voltage of the baseband signal by the voltage adjusting means, and by adjusting amplitude of the baseband signal by the amplitude adjusting means.
Patent JP-2012011284-A (JP)
Title: Nozzle for applying paint of high viscosity
Inventor: TOMITA ICHIO
IPC: B05B1/04
Filed: 2010-06-29
Abstract: PROBLEM TO BE SOLVED: To provide an application nozzle which makes a coated surface flat and smooth.SOLUTION: A nozzle 10 for applying a paint of high viscosity includes an introduction passage 17, an internal space 16 and a nozzle slit 15, these communicating with each other, and radially sprays a paint of high viscosity to a material to be coated from the nozzle slit 15. The nozzle slit 15 is an approximately fan-shaped one having a prescribed angle when viewed in planar view. When the nozzle slit 15 is regarded to be an approximately fan-shaped one, the approximately fan-shaped arc is made to be a nozzle slit outlet 15E, and the gap of the nozzle slit outlet 15E is made to be a slit height D. When the nozzle slit outlet 15E is regarded to be an arc, the chord of the arc is made to be a slit width W, the ratio of the slit height D to the slit width W is made to be a flatness rate F, the slit width W is at least 35 mm, and the flatness rate F is at most 0.01.
Patent JP-2010222379-A (JP)
Title: Composition for preventing or for treating hepatocellular cancer
Inventor: ECONOMOU JAMES S
IPC: A61K38/17
Filed: 2010-06-30
Abstract: <P>PROBLEM TO BE SOLVED: To provide a new composition for preventing or for treating cancer in a mammal by creating an immune response in the mammal.  <P>SOLUTION: The composition for preventing or for treating cancer in a mammal by creating an immune response in the mammal includes immune system cells transduced with a recombinant vector expressing alpha fetoprotein cDNA consisting of a nucleic acid sequence of sequence number 1 wherein the immune response is created to cancer cells having these surface markers by activating alpha fetoprotein peptide-specific T-lymphocytes.  <P>COPYRIGHT: (C)2011,JPO&INPIT
Patent JP-2012013208-A (JP)
Title: Solenoid valve
Inventor: TOMINAGA MOTONORI
IPC: F16K31/06
Filed: 2010-07-05
Abstract: PROBLEM TO BE SOLVED: To provide a solenoid valve that stably controls pressure even when a flow rate is low or a differential pressure is small.SOLUTION: A tapered valve seat 28 is provided between a first flow passage 29 and a second flow passage 33, and a small-diameter side of the valve seat 28 is connected with the first flow passage 29. A valve element 36 having a closing portion 38 which faces the valve seat 28 and is tapered toward a tip slides to bring the closing portion 38 in contact with or away from the valve seat 28, thereby connecting or disconnecting the first flow passage 29 and the second flow passage 33.The valve element 36 receives a force in a direction of seating to the valve seat 28 by electromagnetic force when power is supplied to a coil 42, and receives a force in a direction of separating from the valve seat 28 by pressing force of a spring 39. In the closing portion 38, a groove is formed by hollowing the closing portion 38 to face the flowing direction of fluid. The closing portion 38 has a hemispherical shape. The groove is formed on a first flow passage 29 side of the closing portion 38 seated on the valve seat 28 and the groove is formed in the closing portion 38 on the whole periphery in the circumferential direction.
Patent JP-2012016789-A (JP)
Title: Dust collection device
Inventor: IKUTA HIRONORI
IPC: B23Q11/00
Filed: 2010-07-08
Abstract: PROBLEM TO BE SOLVED: To provide a technology which enables attachment of the dust collection device on the impact tool which is not provided with an attachment section for the dust collection device that collects dust generated by machining operation of the impact tool.SOLUTION: The dust collection device 104 is attached on the impact tool 101 including a tool body 103 and an auxiliary handle 110 attached removably on the tool body 103, and collects dust generated when predetermined machining operation is carried out on material to be machined by, at least in a lengthwise direction, linearly moving a tool bit 119 mounted on a tip region of the tool body 103. The dust collection device 104 includes: a dust collection unit 141 that has a dust intake port 141a opened at a tip; a dust collection hose 146 that is connected to the dust collection unit 141 and transfers the dust sucked in the dust collection unit 141 to a downstream side; and a hose-holding unit 147 that holds the dust collection hose 146 in a state where movement to the lengthwise direction is restricted. The hose-holding unit 147 can be attached to and removed from the auxiliary handle 110.
Patent JP-2012022892-A (JP)
Title: Bulb type lamp
Inventor: SUGITA KAZUSHIGE
IPC: F21V23/00
Filed: 2010-07-14
Abstract: PROBLEM TO BE SOLVED: To provide a bulb type lamp in which even when the lamp is used in a temperature environment of an assumption temperature or more, breakage of a built-in lighting circuit is prevented, and the lamp is turned off to attract the user's attention, and reuse under a correct usage condition becomes possible.SOLUTION: The bulb type lamp includes a light source 6, a lighting circuit 4 which lights the light source by power supply of AC or DC, and a base part 1 which supplies electric power from the power supply to the lighting circuit 4. The lamp has a built-in self-reset type thermal fuse 9 which senses the excess temperature rise of the lamp and temporarily stops power supply to the lighting circuit 4.
Patent JP-2012021328-A (JP)
Title: Wall and construction method of wall
Inventor: ISHIGAMI YUICHI
IPC: E04H17/16
Filed: 2010-07-15
Abstract: PROBLEM TO BE SOLVED: To provide a wall composed of a panel made of foamed polystyrene, which has sufficient strength in a surface thereof and sufficient connection strength between the panel made of foamed polystyrene and a foundation, and to provide a construction method of the wall.SOLUTION: A sheet 11 is made of a mesh material having many meshes and comprises a top sheet 13 for covering the panel 7 from the top face to the middle of side faces of the panel 7; and a lower sheet 15 for covering the panel 7 from the middle of the side face to the lower end of the panel 7. The construction method comprises: applying an adhesive 47 between the sheet 11 and the panel 7; further applying the adhesive 47 from an outer surface side of the sheet 11 to inject the adhesive 47 into the meshes of the sheet 11; and fixing the sheet 11 to the panel 7 in this state. The method further include: stretching the sheet 11 from the top face of the panel 7 to the top face of the foundation 3; and fixing the sheet 11 to the panel 7 and the foundation 3 in this state. That is, the foundation 3, the panel 7 and the sheet 11 are fixed to each other and integrated.
Patent JP-2012006073-A (JP)
Title: High strength welded metal excellent in ctod characteristic
Inventor: TAMURA EIICHI
IPC: B23K35/30
Filed: 2010-07-15
Abstract: PROBLEM TO BE SOLVED: To provide a high strength welded metal obtained by submerged arc welding, excellent in a CTOD (crack tip opening displacement) characteristic.SOLUTION: This high strength welded metal is obtained by the submerged arc welding, contains, in terms of mass%, 0.02-0.12% of C, 0.1-0.70% of Si, 1.0-2.0% of Mn, 0.1-2.5% of Cu and/or 0.5-3.5% of Ni, 1.0% or less (excluding 0%) of Cr and/or 0.5-1.5% of Mo, 0.005% or less (including 0%) of Ca, 0.0050% or less (including 0%) of Ti, 0.005-0.050% of Al, and 0.010-0.050% of O, satisfies formula (1) and has an area ratio of an Al-containing oxide within a range of 0.5 or more to 2.0% or less. Formula (1): 0.45≤[C]+[Mn]/6+([Cu]+[Ni])/15+([Cr] +[Mo]/5)≤0.75.