baber/WOPTO huggingface dataset:
Patent TW-325435-B (TW)
Title: Method and apparatus for producing highly oriented polyester sheet
Inventor: DONALD VAN ERDEN
IPC: B29K67/00
Filed: 1996-05-08
Granted: 1998-01-21
Abstract: An apparatus for producing highly oriented polyester sheet, which comprises: a pair of opposed rollers defining a nip therebetween so that the solid polyester sheet workpiece is conducted through the nip of the opposed rollers, and the sheet workpiece receives simultaneous milling and stretching during a single pass operation and moving in a predetermined direction through the nip; a mechanism for driving the pair of opposed rollers to rotate in opposite directions and at different surface linear velocities in order to, through the different surface linear velocities of the pair of opposed rollers, define a predetermined first draw ratio between the pair of opposed rollers so that the sheet workpiece receives simultaneous milling and stretching while passing through the nip of the opposed rollers; at least one additional roller used to detach the milled and stretched sheet workpiece from the pair of opposed rollers in which the additional roller is installed downstream of the downstream roller of the pair of opposed rollers when viewed from the predetermined moving direction; and a mechanism to drive said at least one additional roller to rotate at a different surface linear speed corresponding to the surface linear speed of the downstream roller of the pair of opposed rollers so as to additionally stretch the milled and stretched sheet workpiece according to a predetermined second draw ratio.
Patent TW-295708-B (TW)
Title: The polysilicon electromigration sensor
Inventor: LIN JYH-SHENQ
IPC: H01L21/66
Filed: 1996-06-10
Granted: 1997-01-11
Abstract: A structure of electromigration sensor is formed on Si wafer substrate fordetecting the adjacent immigration of electron in metal strip. It includes:a polysilicon strip with electric-connection and insulated with substrateelectric by 1st insulated layer, and it is under the metal strip andinsulated with metal strip by 2nd insulated layer.
Patent TW-409132-B (TW)
Title: Composition comprising polysilanes
Inventor: CARROZZA PRIMO
IPC: C08L83/05
Filed: 1996-06-29
Granted: 2000-10-21
Abstract: A composition containing an organic material subject to oxidative, thermal or actinic degradation and at least one compound of the formula (I) wherein p+q is a number from 2 to 100 and q varies from 0 to 50% of the sum of p+q; m and n which are identical or different are zero or 1; R1, R2 and Y which are identical or different are for example C1-C18 alkyl, C5-C12 cycloalkyl unsubstituted or mono-, di- or tri-substituted by C1-C4alkyl; or phenyl unsubstituted or mono-, di- or tri-substituted by C1-C4 alkyl, C1-C4 alkoxy and/or C2-C20 alkanoyl; and, when m is 1 and n is zero, Y is additionally hydrogen; X1 and X2 which are identical or different are for example C2-C12 alkylene, A and B are for example hydrogen, each of the radicals R1, R2, X1, X2 and Y as well as the variables m and n have the same or different definitions in the recurring structural units contained in the formula (I) and, when the compounds of the formula (I) are copolymeric, they have a random, alternate or block distribution of the individual structural units. The compounds of the formula (I) are particularly suitable as process stabilizers. Several compounds of the formula (I) are novel.
Patent TW-381981-B (TW)
Title: Method and apparatus for making sintered porous metal plate
Inventor: HOSHINO KOJI
IPC: B22F5/00
Filed: 1996-09-26
Granted: 2000-02-11
Abstract: A method for making a sintered porous metal plate comprises the steps of: a slurry preparation step for preparing a foamable slurry containing metal powder; a shaping step for shaping the foamable slurry into a plate article; a foaming the plate article; and a drying step for drying the plate article after foaming. Further, an apparatus for making a sintered porous metal plate comprises a slurry preparation section for preparing a foamable slurry containing at least metal powder, a foaming agent and a liquid medium; a shaping section for shaping the foamable slurry fed from the slurry preparation section into a plate article; a foaming section for foaming the plate article of the foamable slurry; and a drying section for drying the cellular article; and these section are integrated in series by a transfer section.
Patent TW-368770-B (TW)
Title: IC socket body and guiding component
Inventor: MATSUMURA SHIGERU
IPC: H05K7/10
Filed: 1996-11-14
Granted: 1999-09-01
Abstract: The invention relates to a kind of IC socket in the IC testing apparatus and the guiding component mounted on the IC socket for precision positioning of the IC to the socket. The IC socket can be applied to different sizes of IC packaging which comprises four insulation blocks and be composed as an almost rectangular frame. The surface bonding IC with protruded tongues on four edges of the packaging and the connection device of the IC socket which contact each tongue of the IC will be allocated according to the connection device contact with the tongues of each edge of the IC respectively and be divided as four insulation blocks and supported with insulation. By mounting the protrusions for positioning on the said four insulation blocks to protrude the insulation blocks and be connected with the insulation substrate by the associated formed penetrating holes and mounted the four insulation blocks on the insulation substrate as almost frame-like.
Patent TW-328056-B (TW)
Title: A proportioner for dispensing a mixture of two fluids and a proportioning system
Inventor: ANDREW I POUTIATINE
IPC: B05B7/04
Filed: 1997-02-14
Granted: 1998-03-11
Abstract: A proportioner for dispensing a mixture of two fluids, which comprises: a first container designed to contain a first liquid; a second container designed to contain a second liquid;a dispensing head; a first cylinder and piston arrangement designed for transporting the first liquid from the first container to the dispensing head; and a second cylinder and piston arrangement designed for transporting the second liquid from the second container to the dispensing head.
Patent TW-325588-B (TW)
Title: Vertical wafer boat
Inventor: UCHIYAMA TARO
IPC: H01L21/673
Filed: 1997-02-21
Granted: 1998-01-21
Abstract: A vertical wafer boat comprising: a pair of annular end plates installed on the upper part and the lower part; a plurality of bars connected to the end plates; and a plurality of supporting grooves formed on the bars for receiving and supporting the semiconductor wafer; in which, the end plates and the bars are made of silicon carbide as the main ingredient and are formed in an integrally coupled/joined structure, having an entire length of not less than 800 mm; the end plates are unitary annular plates without groove seams in the radial direction, the padding of silicon carbide is formed at a coupled/joined portion between an end plate and a bar so that the coupled/joined portion exhibits an obtuse corner.
Patent TW-342575-B (TW)
Title: Apparatus and method for judging kind of object placed on induction heating cooker
Inventor: CHUNG JAE KIM
IPC: H05B6/02
Filed: 1997-05-31
Granted: 1998-10-11
Abstract: An apparatus for judging the kind of an object placed on an induction heating cooker including: a rectifying/smoothing unit for rectifying and smoothing a commercial alternating current; a heating unit for selectively heating the object placed on the induction heating cooker; a first current detector for detecting the commercial alternating current applied to the rectifying/smoothing unit, and converting the detected current to a voltage Va; a second current detector for detecting a high frequency current, and converting the detected current to a voltage Vb; a controller for receiving the voltage Va and the voltage Vb, determining whether the object for being heated by the heating unit is a small utensil object and whether the object, when judged as not a small utensil object, is a magnetic vessel or a non-magnetic vessel, and outputting a control signal; an inverter driving unit for outputting an inverter driving signal; and a switch driving unit for outputting a switch driving signal.
Patent TW-420723-B (TW)
Title: Method of forming diamond like carbon film(DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cathodes
Inventor: JANG JIN
IPC: C23C16/24
Filed: 1997-06-12
Granted: 2001-02-01
Abstract: The present invention relates to a method for forming substantially hydrogen free DLC layers, wherein DLC layer of thickness about 1 to 100 nanometers is deposited over a sample substrate or a field emitter array and subsequently exposed to etching plasma comprising fluorine gas, wherein during the latter step, hydrogen contained in the substrate is eliminated by chemical etching reaction with fluorine, wherein steps to form the hydrogen free DLC layer can be repeated to obtain a predetermined thickness of a DLC film.
Patent TW-338113-B (TW)
Title: Optical waveguide fiber bragg grating
Inventor: ROBERT ADAM MODAVIS
IPC: G02B6/34
Filed: 1997-08-07
Granted: 1998-08-11
Abstract: A method for side writing Bragg gratings, having minimal birefringence, in a waveguide structure comprising the following steps: provision of a waveguide structure with a length and a long axis formed by light-sensitive glass of property and birefringence caused by light; the birefrigence caused by light in portion 1 of the waveguide structure; for measurement of the slow axial direction of the property birefringence and size of the first length; property and birefringence caused by light in the second length of the waveguide with the first length next to the waveguide using diffractional light in perpendicular direction to the waveguide structure and in parallel to the property birefringence slow axis; measurement of the total of the property and the birefringence caused by light, size of the birefringence caused by diffraction equaling the total and the difference from the size of the property birefringence; and forming of Bragg light grating into the third length of the waveguide structure, with lateral focus in the first and the second lengths, with diffraction, where the diffraction facing the waveguide length axis in an angle to cause birefringence and the slow axis and the waveguide fiber long axis in perpendicular and the lighting cause the property bifringence and the slow axis in 90 degrees with the relevant birefringence of the diffraction.
Patent TW-353027-B (TW)
Title: Three-piece solid golf ball
Inventor: SUGIMOTO KAZUSHIGE
IPC: A63B37/00
Filed: 1997-08-21
Granted: 1999-02-21
Abstract: A three-piece solid golf ball comprising a core, an intermediate layer formed on the core, and a cover covering the intermediate layer; in which the core has a diameter of 30 to 36 mm and a specific gravity less than that of the intermediate layer, in case where a deformation amount (mm) of the core when applying 130 kgf to the core is determined, and where a deformation amount (mm) of the intermediate layer-covered core when applying 130 kgf to the intermediate layer-covered core is determined, a ratio of the intermediate layer-covered core deformation amount/the core deformation amount is within the range of 0.75 to 1, and the golf ball has a deformation amount of 2.3 to 3.5 mm when applying a load of 130 kgf.
Patent TW-346649-B (TW)
Title: Method for wet etching a film
Inventor: TANIYAMA HIROMI
IPC: H01L21/304
Filed: 1997-09-22
Granted: 1998-12-01
Abstract: A method for wet etching a film, which uses a chemical solution to etch a film formed on a substrate thereby planarizing the surface of the film, which is characterized in comprising: (a) presetting a type of film, a composition and temperature of the chemical solution, for etching of the film; (b) loading a substrate with the forming face of the film facing upwards thereon on a rotating plate; (c) separately detecting the thickness of the film at least on the periphery portion and the central portion of the substrate; (d) separately obtaining the moving speed of a nozzle at each passing location by an algorithm based on the etching rate of film set in the process (a) and the detected signals of film thickness obtained in the process (c); (e) rotating the substrate by using a rotating chuck; and (f) spraying the chemical solution from the nozzle onto the film formation face of the rotating substrate, while controlling the moving speed of the nozzle according to the moving speed at each passing location obtained in the process (d), thereby sweeping and moving the nozzle towards the radius direction of the substrate.
Patent TW-384521-B (TW)
Title: Semiconductor device having an improved through-hole structure
Inventor: IWASAKI RITSUKO
IPC: H01L21/768
Filed: 1997-11-28
Granted: 2000-03-11
Abstract: A semiconductor device has isolated first layer interconnects, second layer interconnects, third layer interconnects, and through-holes each connecting one of the second layer interconnects and a corresponding one of the third layer interconnects together. The through-holes extend beyond the sides of the second layer interconnects to reach the isolated first layer interconnects and rest thereon. The through-holes formed by a single etching step using a common glass pattern. The occupied area for the interconnects and the fabrication steps thereof can be reduced.
Patent TW-I254644-B (TW)
Title: Manufacture method for super-elasticity memory-alloy golf club head
Inventor: SHIU SHU-EN
IPC: A63B102/32
Filed: 1997-11-28
Granted: 2006-05-11
Abstract: This invention relates to a Ni-Ti based shape memory alloys (Ni-Ti SMAs ), which is subject to special processing and heat treatment to posses pseudo-elasticity (PE), also referred to as super-elasticity (SE), and shape memory effects ( SMEs). If necessary, alloying elements, such as vanadium, cobalt, chromium, copper, iron, and so on, are added to enhance or adjust theses two characteristics. In the meanwhile, the two characteristics are employed to the design of a striking face of a golf club head in order to, on one hand, generate a striking face of super-elasticity that makes a ball struck to fly further, reduce the scattering range of fly-away balls, and expand the sweet area of the club head, and on the other hand, providing a non-welding and no-inserting structure by using the shape memory to generate a strong tightening force that further enhances the super-elasticity effect of the striking face, as well as simplifying the club head manufacturing process. Therefore, it achieves both the economy and the effective application design.
Patent TW-368392-B (TW)
Title: Litter box
Inventor: GORDON TAL
IPC: A01K23/00
Filed: 1998-01-09
Granted: 1999-09-01
Abstract: A litter box including a housing for disposing therein litter for use by a pet, and a grinder for grinding excreta found in the liter box. The litter box preferably includes litter substantially impervious to grinding by the grinder. The litter box includes a filtering assembly for filtering the excreta, ground by the grinder, from the litter. The litter box preferably includes a cleansing liquid which is in fluid communication with the litter, wherein the grinder agitates the litter and the cleansing liquid so as to cause cleansing of the litter.
Patent TW-399243-B (TW)
Title: The process of forming the n type metal oxide semi field effect transistor (nMOSFET) short channel having self-aligned silicide contact
Inventor: WU SHIE-LIN
IPC: H01L21/28
Filed: 1998-02-18
Granted: 2000-07-21
Abstract: This invention grows a layer of oxide layer on the silicon substrate, then deposits a non-doped poly-crystal silicon layer. Next, a silicon nitride thin layer and an n+ doped poly-crystal silicon layer are deposited. This n+ doped poly-crystal silicon layer is back-etched to define the gate. A low-temperature oxygen vapor process oxidizes the n+ doped poly-crystal silicon layer. BOE and diluted HF remove the oxide film on the poly-crystal silicon gate; the residual doped poly-crystal silicon is used as the mask to etch silicon nitride coverage layer. Next, residual doped poly-crystal silicon layer and the silicon nitride layer coverage layer as the mask for etching non-doped poly-crystal silicon layer to form a short channel gate. Next, the PSG side spacer is formed. The silicon nitride coverage layer is removed. Next, a noble metal or refractory metal is deposited on all regions. The high dose arsenic or phosphorus ion is implanted onto the substrate to form the source/drain region. Next, two-step RTP process forms the self-aligned silicide contact to manufacture the short channel in n type metal oxide semi field effect transistor (nMOSFET).
Patent TW-366519-B (TW)
Title: Semiconductor device
Inventor: MAMETANI TOMOHARU
IPC: H01L23/522
Filed: 1998-03-09
Granted: 1999-08-11
Abstract: The present invention relates to a semiconductor device, as an improved semiconductor device providing short circuit between the wiring layer and the semiconductor substrate by avoiding penetration of contact openings. On the interlayer insulation layer 5b, the lower layer conductor layer 3 is provided. The interlayer insulation film 5c covers the lower layer conductor layer 3. In the interlayer insulation film 5c, contact opening 6c is available, and the contact opening 6b linking the upper conductor layer 4b and the lower conductor layer 3. Between the surface of the semiconductor substrate 1 and the lower conductor layer 3, on the lower part of contact opening 6, there is the blocking layer 7 formed by silicide or metals.
Patent TW-381964-B (TW)
Title: Pulp composition of food additive and powder composition and food composition with the said components
Inventor: HOJO HISAKAZU
IPC: A23L29/00
Filed: 1998-03-23
Granted: 2000-02-11
Abstract: The invention provides a kind of pulp composition and powder composition of food additive selected from compositional groups of calcium carbonate, calcium phosphate and iron pyrophosphate with 1~60 wt% Arabia gum. The invented pulp composition of food additive and powder composition has excellent property for redissolving and long-term dissolving stability in the solution and excellent taste. It is also more economical for reaching a higher concentration after re-dissolvation.
Patent TW-512068-B (TW)
Title: Over current protection device for potential treatment device
Inventor: SUZUKI KAZUNARI
IPC: A61N1/08
Filed: 1998-04-13
Granted: 2002-12-01
Abstract: To secure safety by preventing the electric shock of a person to be treated without damaging the convenience of a potential treatment device. In the case that the potential treatment device performs output by a set voltage 9000 volts (step 101,) when the detected value IOUT of an output current exceeds a maximum allowable value 0.5 mA, an output voltage is lowered to 6000 volts (step 104 to step 201.) Then, when the detected value IOUT of the output current becomes lower than a restoration allowable value 0.2mA, the output voltage is restored to the original 9000 volts (step 204 to step 101).
Patent TW-376548-B (TW)
Title: Treating system and treating method for semiconductor substrates
Inventor: KONISHI TOUKO
IPC: H01L21/306
Filed: 1998-06-16
Granted: 1999-12-11
Abstract: To prevent a surface of a semiconductor substrate from being damaged, by dissolving ozone into a chemical liquid or pure water, and controlling the concentration of the ozone by irradiating ultraviolet rays to the ozone dissolved chemical liquid or pure water, for treating the semiconductor substrate. A substrate treating system comprises a step for generating ozone gas by means of an ozone gas generating means 11, and a step for introducing the ozone gas to an ejector 10 for dissolving ozone, which has a dissolution film made of a polyolefin material. The ozone gas is dissolved in pure water in the ejector 10, followed by irradiating ultraviolet rays by means of an ultraviolet irradiation means 9 to decompose the ozone in the ozone water, thereby supplying ozone water of a given concentration to a substrate treating unit 8. In this way, with the supply of the ozone water of the given concentration to phosphoric acid of high temperature, a silicon oxide film is formed on the surface of a silicon substrate, so that the surface of the silicon substrate is prevented from being directly exposed to the high temperature phosphoric acid, thus preventing the surface of the silicon substrate from being damaged.
Patent TW-482804-B (TW)
Title: Flame-retardant polymer composition.
Inventor: CREVECOEUR GUIDO
IPC: C08L53/02
Filed: 1998-06-19
Granted: 2002-04-11
Abstract: Flame-retardant polymer composition containing (a) at least one condensation polymer, (b) a halogen-containing styrene polymer, (c) a polymer derived from an aromatic vinyl monomer containing functional groups that can react with the condensation polymer and (d) elastomeric polymer segments. Examples of suitable condensation polymers are polyamides and/or thermoplastic polyesters. The composition shows an improved flame retardancy and/or better toughness than the compositions according to the state of the art.
Patent TW-390019-B (TW)
Title: Semiconductor memory device
Inventor: ASAKURA MIKIO
IPC: G11C29/00
Filed: 1998-06-23
Granted: 2000-05-11
Abstract: A semiconductor memory device according to the present invention includes a block determining portion (16) determining a difference in arrangement between a normal cell and a spare cell (SC) which replaces it, a data scramble controlling circuit (20) generating a scramble ON signal when a normal cell is replaced by a spare cell and the spare cell stores inverted data, a scramble circuit (10) inverting data to be written in response to the scramble ON signal (son), and a scramble circuit (8) inverting data to be read in response to the scramble ON signal (son).
Patent TW-388846-B (TW)
Title: A graphic processor and a graphic processing method
Inventor: MIZUTANI KENICHI
IPC: G09G5/393
Filed: 1998-06-24
Granted: 2000-05-01
Abstract: A graphic processor comprises a timing generator (12) to output the signal for operation timing control according to the clock signal, the vertical sync signal and the horizontal sync signal, a drawing processor (11) to output the graphic data of the object figures, a selection section (16) to output the display buffer address signal under the control of the timing generator (12), a display buffer (13) to which the graphic data output from the drawing processor (11) is input and which outputs the display data signal under the control of the timing generator (12), a mask section (17) to mask the display data signal output from the display buffer (13) as required and a status register (15) to control the mask section (17) according to the display buffer address signal.
Patent TW-426902-B (TW)
Title: Method for fabricating gate structure
Inventor: WANG CHIUAN-FU
IPC: H01L21/28
Filed: 1998-06-25
Granted: 2001-03-21
Abstract: A method for fabricating a gate structure performs an oxide deposition, a chemical mechanical polishing, a wet etching, a deposition of silicon nitride, an etching back of silicon nitride, and an etching back of an oxide on a layer defined with a polysilicon, thereby forming a silicon nitride mask on the upper layer of a gate. As a result, the gate can be applied on a self-aligned contact (SAC) technique, and can reduce the occurrence of a leakage current caused by the stress generated at the corner edge of its spacer.