Patent SG-11201809540R-A (SG)
Title: Stripping compositions for removing photoresists from semiconductor substrates
Inventor: MIZUTANI ATSUSHI
IPC: C23G1/00
Filed: 2017-05-17
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1111111011111111101 1111111111111111111111111111111111111111111111111111111111111111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2017/205134 Al 30 November 2017 (30.11.2017) WIPO I PCT (51) International Patent Classification: B08B 3/00 (2006.01) C23G 1/00 (2006.01) Published: C11D 3/20 (2006.01) — with international search report (Art. 21(3)) (21) International Application Number: PCT/US2017/033041 (22) International Filing Date: 17 May 2017 (17.05.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/340,204 23 May 2016 (23.05.2016) US (71) Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. [US/US]; 80 Circuit Drive, N. Kingstown, Rhode Island 02852 (US). (72) Inventors: MIZUTANI, Atsushi; Marcel Thiry 80-D21, 1200 Woluwe Saint Lambert (BE). WOJTCZAK, William — A.; 6803 Rio Bravo Lane, Austin, Texas 78737 (US). SUGISHIMA, Yasuo; 2910 S Greenfield Rd, #1055, — = Gilber, Arizona 85295 (US). = (74) Agent: ZHANG, Tony et al.; Fish & Richardson P.C., P.O. Box 1022, Minneapolis, Minnesota 55440-1022 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = DE, DJ, DK, DM, DO, — CA, CH, CL, CN, CO, CR, CU, CZ, = DZ, EC, EE, EG, ES, FI, HN, GB, GD, GE, GH, GM, GT, — HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, = KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, = MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, = = PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, = SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. = = = Designated States indicated, (84) (unless otherwise for every = kind of regional protection available): ARIPO (BW, GH, = GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, = ZM, ZW), Eurasian AZ, BY, KG, KZ, RU, TJ, UG, (AM, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, = — EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, = MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, — KM, ML, MR, NE, SN, TD, TG). 1-1 7r M (54) Title: STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES 1-1 Ir) (57) : This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic ei ---- acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substitut- IN ed-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, © and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, f'1 Co, and the like) on a semiconductor substrate. 0