Patent SG-11201901450Q-A (SG)
Title: Methods of forming semiconductor device structures including two-dimensional material structures
Inventor: MEADE ROY E
IPC: H01L27/06
Filed: 2017-08-08
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 08 March 2018 (08.03.2018) W I PO I PCT °mons °nolo omo Ho mil Em om oimIE (10) International Publication Number WO 2018/044512 Al (51) International Patent Classification: H01L 21/02 (2006.01) HOlL 27/06 (2006.01) (21) International Application Number: PCT/US2017/045852 (22) International Filing Date: 08 August 2017 (08.08.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/253,454 31 August 2016 (31.08.2016) US (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Mailstop 525, Boise, Idaho 83707 (US). (72) Inventors: MEADE, Roy E.; 5621 South Cliffsedge Av- enue, Boise, Idaho 83716 (US). PANDEY, Sumeet C.; 7918 South Red Cliff Avenue, Boise, Idaho 83716 (US). (74) Agent: FLORES, Jesse Metal.; 230 South 500 East, Suite 300, Salt Lake City, Utah 84102 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). = (54) Title: METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES 100 104 102 FIG. O 00 O O (57) : A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described. [Continued on next page] WO 2018/044512 Al MIDEDIMOMMIDIIMMEOMMOIVIIMIIIIIIIIIIME11111111111 Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(11)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))