Patent SG-11201906903P-A (SG)
Title: Sub-nanometer-level substrate cleaning mechanism
Inventor: RANDHAWA RUBINDER S
IPC: H01L21/67
Filed: 2018-01-30
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 09 August 2018 (09.08.2018) WIPO I PCT o mono °nolo Ho Ho Ho Ho Em Inv ois (10) International Publication Number WO 2018/144446 Al (51) International Patent Classification: HOlL 21/67 (2006.01) H01L 21/02 (2006.01) (21) International Application Number: PCT/US2018/015924 (22) International Filing Date: 30 January 2018 (30.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/455,425 06 February 2017 (06.02.2017) US 62/518,277 12 June 2017 (12.06.2017) US (71) Applicant: PLANAR SEMICONDUCTOR, INC. [US/US]; 1759 South Main Street, Suite 120, Milpitas, Cal- ifornia 95035 (US). (72) Inventors: RANDHAWA, Rubinder S.; 3263 Cranbrook Place, Dublin, California 94568 (US). CHRISTOV, Har- ry; 390 Darryl Drive, Campbell, California 95008 (US). (74) Agent: SCHEER, Bradley W. et al.; Schwegman Lund- berg & Woessner, P.A., P.O. Box 2938, Minneapolis, Min- nesota 55402 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: SUB-NANOMETER-LEVEL SUBSTRATE CLEANING MECHANISM (57) : Various embodiments comprise apparatuses for cleaning and drying a substrate and methods of operating the appara- tuses. In one embodiment, an exemplary apparatus includes a vertical substrate holder to hold and rotate the substrate at various speeds. An inner shield and an outer shield, when in a closed position, surround the vertical substrate holder during operation of the apparatus. Each of the inner shield and the outer shield can operate independently in at least one of rotational speed and direction from the other shield. A front-side spray jet and a back-side spray jet are arranged to spray at least one fluid onto both sides of the substrate and edges of the substrate substantially concurrently. A gas flow, combined with a high rotational-speed of the shields and substrate, assist in drying the substrate. Additional apparatuses and methods of forming the apparatuses are disclosed. [Continued on next page] WO 2018/144446 Al IMIOMMIBIRE1013010HOHOHOEHEOHEEM SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: of inventorship (Rule 4.17(iv)) Published: — with international search report (Art. 21(3))