baber/WOPTO huggingface dataset:
Patent TW-495723-B (TW)
Title: Multi-lane free-flow electronic tolling system
Inventor: SHIE WEN-YANG
IPC: G07C1/30
Filed: 2001-09-13
Granted: 2002-07-21
Abstract: The present invention relates to a multi-lane free-flow electronic tolling system using overhead 2-dimensional plane network detector array to detect vehicles passing through the course in the communication area of the electronic tolling system so to accomplish the purpose of multi-lane free-flow automatic toll charging and improve the flexibility of the software and the hardware. The system comprises: (1) an overhead plane network detector array (e.g. infrared and microwave) to detect objects passing through underneath; (2) a control computer connected with the output of each detector to monitor the dynamic traffic conditions in the communication area and provide all the related data for toll charging; (3) an execution system to determine whether any rule infringement has taken place and, if so, take photographs as evidences for offence reporting; (4) a hardware control interface connected with the control computer to transmit commands given from the control computer for dynamically controlling each hardware operating mode and improving its flexibility.
Patent TW-523961-B (TW)
Title: Fuel cell and method for preparation thereof
Inventor: YAMAURA KIYOSHI
IPC: H01M4/92
Filed: 2001-09-27
Granted: 2003-03-11
Abstract: The present invention provides a fuel cell in which optimum proton conductivity is maintained even in a dry atmosphere and in which the output is not lowered. The fuel cell of the present invention includes a fuel electrode and an oxygen electrode. The fuel electrode and oxygen electrode are arranged oppositely via a proton conductor film. The fuel electrode and the oxygen electrode are formed of powders of a carbonaceous material as an electrode material. A proton conductor composed of a carbonaceous material mainly composed of carbon and proton dissociative groups introduced into the carbonaceous material is present on the surfaces of the fuel and/or oxygen electrodes. In manufacturing such electrodes, the method includes adding powders of a carbonaceous material as a material for electrodes into a solvent containing a proton conductor. The proton conductor includes a carbon-based material substantially composed of carbon and proton dissociative groups introduced into the carbon-based material. The proton conductor composed of the carbonaceous or carbon-based material (such as, carbon clusters, e.g., fullerene or carbon nano-tubes) mainly composed of carbon and proton dissociative groups introduced into the carbonaceous material can exhibit optimal and desirably optimum proton conductivity without humidification.
Patent TW-548319-B (TW)
Title: Paint composition for metal goods
Inventor: NAKAI MASAAKI
IPC: C09D201/00
Filed: 2001-10-04
Granted: 2003-08-21
Abstract: The object of the present invention is to provide paint composition for metal goods wherein it is superior in adherence to various metals; for example: nonferrous metals, such as aluminum, zinc and lead, or stainless steel, it has superior characteristics, such as flexibility, impact resistance, weather resistance, water resistance, moisture resistance and scratch resistance, and it can form paint film superior in design, such as gloss and appearance. The paint composition for metal goods is compounded of: 40-90 parts by weight of resin for baking paint, 5-50 parts by weight of amino resin and 3-10 parts by weight of epoxy resin.
Patent TW-511166-B (TW)
Title: Equipment for communication system and semiconductor integrated circuit device
Inventor: YOKOGAWA YOSHIYA
IPC: H01L27/06
Filed: 2001-11-20
Granted: 2002-11-21
Abstract: Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of δ-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of δ-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the δ-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.
Patent TW-I245009-B (TW)
Title: Cushioning packaging bag
Inventor: TANAKA MIKIO
IPC: B65D33/24
Filed: 2001-11-30
Granted: 2005-12-11
Abstract: To provide a cushioning packaging bag which can smoothly receive an object which needs cushioning while the object can be easily inserted and removed. The cushioning packaging bag comprises an air passage 2 which is formed by overlaying plastic films and gluing their required portions, and an air sealing bag 3 connected with one of side rims of the passage 2. The air sealing bag 3 is equipped with a plurality of air division-sealing bags 4 formed by gluing the bag 3 at a plurality of portions, check valves 5 which are designed and placed to allow the bags 4 and the passage 2 to communicate with and shut from each other individually, and creases 6 for forming storage spaces which are formed by individually gluing every two rows in a direction across each bag 4 on both sides of the bag 3. A base 1 of the packaging bag is folded from both sides in a direction across each division-sealing bag 4, both side rims 9 and 11 are overlaid, both lateral sides of the bag 4 are glued, and an opening 28 for insertion/removal is formed at the overlap between both lateral sides which have been glued.
Patent TW-I239987-B (TW)
Title: Process for producing the pigment yellow 180
Inventor: HASHIMOTO ISAO
IPC: C09D11/00
Filed: 2001-12-10
Granted: 2005-09-21
Abstract: The diazotization is carried out on 1,2-bis(2-aminophenoxy) ethane, and when the obtained diazo-component and 5-acetoacetylamino-benzimidazolone carried out the coupling for producing the pigment yellow 180, the pigment yellow 180 having well transparency can be produced with using 5-acetoacetylamino-benzimidazolone as the coupling component.
Patent TW-546926-B (TW)
Title: Secure communication system and method for multiple signals of laser
Inventor: LI TZUNG-SHI
IPC: H04B10/00
Filed: 2002-01-21
Granted: 2003-08-11
Abstract: A secure communication system and method for multiple signals of laser makes emitting end and receiving end together generate chaotic laser beams and makes the chaotic laser beams from emitting end and receiving end conduct simplex couple and form simplex asymptotical synchronization principle. Using low-pass filter to raise the fractal dimension of chaotic time sequence and to further translate multiple signals.
Patent TW-I293625-B (TW)
Title: Process for the preparation of monocarbonyl or biscarbony or hydroxyl compounds
Inventor: ENGELBERT KLOIMSTEIN
IPC: C07D213/46
Filed: 2002-02-25
Granted: 2008-02-21
Abstract: The invention relates to a method for producing monocarbonyl compounds or biscarbonyl compounds or hydroxyl compounds by ozonizing, unsaturated organic carbon compounds that, per molecule, have one or more olefinic or aromatic double bonds, which can be cleaved by ozone, and by subsequently processing the ozonization products. According to the inventive method, unsaturated organic carbon compounds that, per molecule, have one or more olefinic or aromatic double bonds, which can be cleaved by ozone, are: (a) in 1 to 2 steps, continuously reacted with ozone in stoichiometric quantities or in excess while using counter educt currents and being in an organic solvent or in an aqueous solution inside a device, which consists of one to two absorption apparatuses, of devices for carrying away reaction heat, and of devices for separating the gas and liquid phases, and; (b) the peroxides resulting therefrom are, according to reaction parameters from step (a), converted into the corresponding monocarbonyl compounds or biscarbonyl compounds or hydroxyl compounds either by continuous or discontinuous hydrogenation, oxidation or heating.
Patent TW-581884-B (TW)
Title: Projection lenses for use with reflective pixelized panels
Inventor: KREITZER MELVYN H
IPC: G02B13/04
Filed: 2002-02-25
Granted: 2004-04-01
Abstract: Projection lenses (13) for use with pixelized panels (PP) are provided. The projection lenses have a negative first unit (U1) which has at least one aspheric surface and a positive second unit (U2) which has three subunits (US1, US2, US3) which have a positive/negative/positive configuration. The lens' aperture stop (AS) is located at the short conjugate end of the lens and is either in the third subunit (US3) or close to that subunit. The lenses are particularly well-suited for use in the manufacture of compact projection systems which employ side illumination of a reflective pixelized panel.
Patent TW-550635-B (TW)
Title: Manufacturing system of electronic devices
Inventor: ITO SHINICHI
IPC: G03F9/00
Filed: 2002-03-07
Granted: 2003-09-01
Abstract: The laser processing apparatus used in the invented manufacturing system of electronic devices contains the followings: a laser oscillator, which oscillates to generate the laser beams for removing a part of the substrate to be processed; a scanning system for irradiating the optional position of the substrate with the laser beams generated by this oscillator; and the incident means for making the laser beams oscillated from the oscillator incident on the substrate nearly vertically.
Patent TW-523826-B (TW)
Title: Determination method of CMP processing time
Inventor: LIN JIUN-DE
IPC: B24B37/04
Filed: 2002-03-15
Granted: 2003-03-11
Abstract: A determination method of CMP processing time comprises the following steps. First, polish the control wafer by CMP and record the relation of the polishing removal thickness and polishing time. Second, CMP the wafer. The polishing removal thickness is H1 and the polishing time is T1, in which H1 must be smaller than the real removal thickness H. Polish out a large part of rugged area on the wafer surface to let the wafer smoother and have the polish characteristics similar to the control wafer. Third, according to the relation of the polishing removal thickness and polishing time of the control wafer, estimate the removal thickness H1' during the polishing time T1. Treat the wafer with remaining thickness H2=(H-H1) as a control wafer and use the polish thickness H'=(H2+H1') of the control wafer as an equivalent quantity of the wafer polishing thickness H. Finally, according to the relation of the polishing removal thickness and polishing time of the control wafer and the equivalent quantity of the wafer polishing thickness H decide the polishing time of removal thickness H.
Patent TW-I227321-B (TW)
Title: Photon correlator
Inventor: TSUTSUI KAZUNORI
IPC: G01J1/44
Filed: 2002-03-29
Granted: 2005-02-01
Abstract: The invention relates to a photon correlator, which includes a plurality of sampling gates 11a to 11e for differing the opening time of the gates, a plurality of memories 12a to 12e disposed to correspond to the sampling gates 11a to 11e respectively for storing the data equivalent to the photon number, and a computation processing control unit for reading out the data stored in the aforementioned memories 12a to 12e to perform the correlated computation processing by means of software. When using the hardware structure of the sampling gates 11a to 11e and the memories 12a to 12e to perform the related computation processing, the particle size and the diffusion coefficient of particles in fluid can be acquired at high speed in accordance with a myriad of conditions.
Patent TW-I264096-B (TW)
Title: Semiconductor package with heat-dissipating structure
Inventor: TIEN CANDY
IPC: H01L23/36
Filed: 2002-04-02
Granted: 2006-10-11
Abstract: A semiconductor package with a heat-dissipating structure is proposed, in which a chip is mounted on a die pad of a lead frame, and the heat-dissipating structure includes a first heat sink and a second heat sink that are respectively disposed above and below the chip. An interposer is provided between the first heat sink and the chip for the purpose of heat transmission, and the second heat sink is in contact with the die pad, so as to improve heat-dissipating efficiency of the package structure. A ground mechanism is formed in connection with the die pad; the ground mechanism helps improve overall electrical grounding effect of the semiconductor package, and also facilitate heat dissipation as to further enhance the overall heat-dissipating efficiency for the package structure.
Patent TW-575410-B (TW)
Title: Garment hanger having a removable size indicator
Inventor: OLK OLAF F
IPC: A47G25/14
Filed: 2002-04-08
Granted: 2004-02-11
Abstract: A garment hanger having a releasable size indicator. The garment hanger including a hook for suspending the hanger on a support and a body connected to the hook; the hanger having at least one web for removably securing a size indicator to the hanger, the web having a fixed latch and a pivoting latch; and a size indicator having a triangular cross-section and fingers for engaging the fixed and pivoting latches such that the size indicator is secured on the web during normal use, but wherein the size indicator may be released from the fixed latch when the pivoting latch is pivoted out of engagement with the fingers of the size indicator.
Patent TW-518393-B (TW)
Title: Amplifying drill and fixing work and ground plot modification construction method thereof
Inventor: SUGA KOICHI
IPC: E21B3/00
Filed: 2002-04-09
Granted: 2003-01-21
Abstract: This invention provides an amplifying drill and fixing work and ground plot modification construction method thereof, aiming to solve following conventional problems or difficulties: (1) unable to insert tensile steel into the amplifying drill hole while pulling up the excavation rod before contracting the drill head; (2) difficult to insert tensile steel or grouting pipe into the amplifying drill hole even after the excavation rod is pulled up; (3) excavation water unable to be sent to the front end of the drill head. Solutions: (1) to insert an inner pipe into the bottom end of an interior outside pipe to install a short pipe type drill joint; (2) to install in the inside a round sectional drill socket body, which is inserted, embedded and able to be pulled out from the bottom, with a pair of left and right slat-shaped drill heads to embedded in its back part via axis rotation; (3) to set downward a stir rod at the front end of the inner pipe mentioned above to be pushed, pressed, and inserted into drill rod in the center hole of the drill body; (4) to open the drill head and set one or more pins around the periphery of the drill body mentioned above, in line with the down side of the drill joint upwards and fastened to a hook shaped channel of the upper curve part. The embedding and fastening mechanism mentioned above helps keep/remove the drill body on/from the drill joint, the connect seat on/from the upper end of the outside pipe mentioned above available for back and forth motions.
Patent TW-590864-B (TW)
Title: Method of compounding a multimodal polyethylene composition
Inventor: RATY MARIE-FRANCE
IPC: B29K23/00
Filed: 2002-06-04
Granted: 2004-06-11
Abstract: Method of compounding a multimodal polyethylene composition in a compounding device, wherein (a) the total residence time of the polyethylene composition in the compounding device is at least 1.5 minutes, (b) the total drive specific energy (SEC) applied on the polyethylene composition is from 0.270 to 0.460 kWh/kg, (c) optionally, a specific cooling energy (SCC) of at most 0.200 kWh/kg is applied on the polyethylene composition, (d) the total specific energy, which is the difference between the total drive specific energy SEC and any specific cooling energy SCC, applied on the polyethylene composition is from 0.220 to 0.330 kWh/kg.
Patent TW-550835-B (TW)
Title: III group nitride based semiconductor element and method for manufacture thereof
Inventor: SENDA MASANOBU
IPC: C23C4/18
Filed: 2002-06-06
Granted: 2003-09-01
Abstract: Subject of the present invention is to provide a III nitride compound semiconductor device, equipped with a new substrate. A Ti isolation layer is formed on an auxiliary substrate of sapphire or the like, and a base player of TiN is formed on the Ti isolation layer. The base layer is used to make a III nitride compound semiconductor layer grow with high crystallinity. A sprayed layer is formed on the base layer by flame-spraying TiN on the base layer. Thereafter, the Ti layer is etched chemically to make the base layer exposed. A III nitride compound semiconductor layer is grown on the surface of the base layer.
Patent TW-I255506-B (TW)
Title: Method and structure for buried circuits and devices
Inventor: CAMPBELL JOHN E
IPC: H01L27/08
Filed: 2002-06-10
Granted: 2006-05-21
Abstract: A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.
Patent TW-567617-B (TW)
Title: A method of producing a lamp
Inventor: JEGANATHAN BALU
IPC: F21K99/00
Filed: 2002-06-14
Granted: 2003-12-21
Abstract: A method of producing a lamp, including mounting light emitting junctions on a support structure such that the junctions adopt a three-dimensional array.
Patent TW-I257697-B (TW)
Title: Low-voltage punch-through bi-direction transient-voltage suppression devices having surface breakdown protection and methods of making the same
Inventor: EINTHOVEN WILLEM G
IPC: H01L27/02
Filed: 2002-07-05
Granted: 2006-07-01
Abstract: A bi-directional transient voltage suppression device is provided. The device comprises: (a) a lower semiconductor layer of p-type conductivity; (b) an upper semiconductor layer of p-type conductivity; (c) a middle semiconductor layer of n-type conductivity adjacent to and disposed between the lower and upper layers such that lower and upper p-n junctions are formed; (d) a mesa trench extending through the upper layer, through the middle layer and through at least a portion of the lower layer, such that the mesa trench defines an active area for the device; and (e) an oxide layer covering at least portions of the walls of the mesa trench that correspond to the upper and lower junctions, such that the distance between the upper and lower junctions is increased at the walls. The integral of the net middle layer doping concentration of this device, when taken over the distance between the junctions, is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown. A method of making such a device is also provided, which comprises: (a) providing a p-type semiconductor substrate; (b) epitaxially depositing a lower semiconductor layer of p-type conductivity; (c) epitaxially depositing a middle semiconductor layer of n-type conductivity over the lower layer; (d) epitaxially depositing an upper semiconductor layer of p-type conductivity over the middle layer; (e) heating the substrate, the lower epitaxial layer, the middle epitaxial layer and the upper epitaxial layer; (f) etching a mesa trench that extends through the upper layer, through the middle layer and through at least a portion of the lower layer, such that the mesa trench defines an active area for the device; and (g) thermally growing an oxide layer on at least those portions of the walls of the mesa trench that correspond to the upper and lower junctions of the device.
Patent TW-I252847-B (TW)
Title: Synthesis of taxol enhancers
Inventor: CHEN SHOUJUN
IPC: C07D261/18
Filed: 2002-07-09
Granted: 2006-04-11
Abstract: Disclosed is a method of preparing a thiohydrazide product compound from a hydrazide starting compound. The hydrazide starting compound is represented by structural formula (I). The thiohydrazide product compound is represented by structural formula (II). In structural formulas (I)-(II), R1 and R2 are independently an aliphatic group, a substituted aliphatic group, an aryl group or a substituted aryl group, or R1 and R2 taken together with the carbon and nitrogen atoms to which they are bonded, form a non-aromatic heterocyclic ring optionally fused to an aromatic ring. When R2 is an aryl group or a substituted aryl group, then R5 is a hydrazine protecting group; and when R2 is an aliphatic or substituted aliphatic group, then R5 is -H or a hydrazine protecting group. R10 is -H or a substituted or unsubstituted alkyl group. The method comprising the step of reacting the starting compound with a thionylating reagent.
Patent TW-541781-B (TW)
Title: Adjustable oscillation circuit
Inventor: WANG CHIEN-JUNG
IPC: H03B5/32
Filed: 2002-07-25
Granted: 2003-07-11
Abstract: An adjustable oscillation circuit is disclosed, and more particularly, it relates to an adjustable oscillation circuit utilized in AC hot carrier injestion stress test circuit for a wafer level test. The adjustable oscillation circuit of the present invention comprises a frequency controlling circuit and a duty-cycle controlling circuit. By controlling and changing the AC frequency and duty-cycle of the injected hot carriers, the influence of hot carriers on semiconductor devices under various operation frequencies can be evaluated accurately.
Patent TW-541732-B (TW)
Title: Manufacturing method of LED having transparent substrate
Inventor: HUANG WEN-JIE
IPC: H01L33/06
Filed: 2002-08-28
Granted: 2003-07-11
Abstract: The present invention provides a manufacturing method of LED having transparent substrate, which can increase the brightness of emitted light to about 2 times that of the prior art, so as to enhance the function of electro-optic device. Its manufacturing method comprises forming a first type cladding layer on a substrate; forming an active layer on the first type cladding layer; forming a second type cladding layer on the active layer; forming a second type transparent semiconductor layer on the second type cladding layer as the transparent substrate of LED; forming a second type contact layer on the second type transparent semiconductor layer; removing the substrate; and forming a first type contact layer on the side of the first type cladding layer which contacts with the first type substrate.
Patent TW-556295-B (TW)
Title: Semiconductor device and manufacturing method of the same
Inventor: AZUMA KOSUKE
IPC: H05K1/11
Filed: 2002-09-05
Granted: 2003-10-01
Abstract: An interposer has a connection electrode formed on the surface of the insulating substrate, and a solder bump of a semiconductor chip connects with the connection electrode. The surface of the insulating substrate is made become a rough surface where unevenness is formed, and the connection electrode has a structure that it is easily peeled off from the surface of the insulating substrate in a region with which the solder bump is connected by coating surface low active agent. When thermal stress occurs between the semiconductor chip and the interposer based on the difference of coefficient of thermal expansion, the thermal stress allows the connection electrode to peel off from the surface of the insulating substrate at the connection area with the solder bump to bring it into a floating state, and the thermal stress is absorbed due to elastic deformation of the connection electrode. Since the connection electrode is in a close contact state with the insulating substrate when thermal stress is not applied, the semiconductor chip can be stably mounted. With this configuration, easy manufacturing and stably holding of the semiconductor chip are realized while thermal stress occurred between the semiconductor chip and a substrate that mounts it is absorbed.