baber/WOPTO huggingface dataset:
Patent JP-S59218352-A (JP)
Title: Tow-barrel carburetor
Inventor: ASABA KOUSEI
IPC: F02M13/04
Filed: 1983-05-26
Abstract: PURPOSE:To miniaturize a carburetor as a whole, by installing a variable choke (Venturi) carburetor and a fixed-choke carburetor as a common float chamber. CONSTITUTION:Both main air passages 11 and 21 of a variable choke carburetor 13 and a fixed-choke carburetor 2 are installed on top of one float chamber 3, forming them into a tow-barrel carburetor in version. The variable choke carburetor is excellent in transient responsiveness but when two units are set up in parallel as a tow-barrel type, it takes space too much. For this reason, one unit of them is to be the fixed choke carburetor to solve this overspacious problem. What is more, the float chamber is made to use in common. With this constitution, miniaturization on the whole comes to fruition.
Patent JP-S61251201-A (JP)
Title: Microwave circuit
Inventor: NAKANO HIROSHI
IPC: H01P3/08
Filed: 1985-04-27
Abstract: PURPOSE:To attain the convenience in mounting by designing a base that a strip center conductor is placed from an upper face to a lower face. CONSTITUTION:The strip center conductors 8, 9 are overlapped partly on and beneath a dielectric base 15, a through hole is provided to the overlapped part, and the strip center conductors 8, 9 are connected together via a transposition use conductor 11 in the through hole and the strip center conductors 8, 9 act electrically line a strip center conductor. Earth conductor faces 13, 14 to the strip center conductors 8, 9 respectively are overlapped partly on and beneath the dielectric base 15 similarly as the strip center conductors, a through hole is provided to the overlapped part, the earth conductor faces 13, 14 are connected via transposition conductors 10, 12 in the through hole and act electrically like one earth conductor face. Thus, the component mounting state of a microwave circuit is adjusted comparatively freely as required.
Patent JP-H11287917-A (JP)
Title: Plane waveguide type optical circuit and its manufacture
Inventor: KATAYAMA MAKOTO
IPC: G02B6/13
Filed: 1998-04-03
Abstract: PROBLEM TO BE SOLVED: To provide the plane waveguide optical circuit which has an optical circuit which can be manufactured through a simple process and is arranged with high precision. SOLUTION: The plane waveguide type optical circuit is equipped with a silica glass substrate 1 and an optical waveguide 7 which is formed in a substrate 1. The optical waveguide 7 is a part of the substrate which is made higher in refractive index than the circumference by irradiating the substrate 1 with X rays 4. The photon energy of the X rays 4 made to irradiate the silica glass substrate 1 through an X-ray mask 6 so as to form the optical waveguide 7 is 1.8 to 20 keV.
Patent JP-S62248567-A (JP)
Title: Manufacture of weld bead for positioning and equipment directly used therefor
Inventor: KUSUMOTO SHOGO
IPC: B23K9/04
Filed: 1986-04-21
Abstract: PURPOSE:To perform the positioning with an extremely simple and accurate means by mounting an orthogonal water-cooled copper block on the positioning position of the article surface and obtaining a weld bead on the surface close to a block corner of an article or machining one side of the weld bead at right angles. CONSTITUTION:The water-cooled Copper block 23 with the orthogonal corner 32 is mounted on the positioning position of the iron product 1 surface and the surface 22 in the neighborhood adjacent to the block 23 corner of the iron product 1 is arc-welding to form the bead 21. Since the bead 21 is hardly welded to the copper block 23 and watercooled, it is not melted. Accordingly, when the block is separated after the bead 21 is formed, the bead 21 is positioned at the prescribed position. Moreover, the bead 21 is formed to the positioning position and its one side can be machined along a positioning line. It is not necessary to perform. the complicated machining with step and to weld a positioning key, etc., and the positioning is accurately performed with an extremely simple method.
Patent JP-H08329867-A (JP)
Title: Anode of flat display screen
Inventor: SUTEFUAN MUUGAN
IPC: H01J31/12
Filed: 1996-03-22
Abstract: PROBLEM TO BE SOLVED: To remove a controversial point of an electronic arc without impairing brightness of a screen by forming an electrode strip (ST) wire of a resistance ST wire to receive a signal from a single phosphor ST wire and bias ST wires having a resistance value lower than it. SOLUTION: An ST wire 17 of an anode electrode of a flat display screen contains a resistance ST wire 18 to support phosphor elements 7 and at least single parallel biassing ST wires 19. The ST wire 18 is desirably provided in the lengthwise direction by the two biassing ST wires 19. An anode is electrically continuous, and is formed on a transparent base board 6 by the parallel ST wire 18 made of a transparent material such as In or a tin oxide. The ST wire is provided by the two highly conductive strip wires 19 composed of Al, Cu or Au. In a color screen, the strip wires 19 are connected to an internal connecting part of the phosphor ST wires 7 having the same color by one of these end parts. The ST 19 has a resistance value lower than a resistance value of a material to constitute the ST wire 18.
Patent JP-S5216237-A (JP)
Title: Winding drum for photo transmission fiber
Inventor: HARA RIYOUICHI
IPC: C03B37/03
Filed: 1975-07-28
Abstract: PURPOSE:To alter tension conditionof a photo transmission fiber by providing such a flexible bag on the outer circumference of a winding drum that allows fluid to be charged into and discharged out of it, and by winding the photo transmission fibers around the flexible bag.
Patent JP-S62249310-A (JP)
Inventor: HIRANO TATSUMI
IPC: H01B13/16
Filed: 1986-04-21
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0897374-A (JP)
Title: Circuit for controlling voltage between well and source of transistor of mos logic circuit and system for interlocking power supply unit to mos logic circuit
Inventor: KAENEL VINCENT VON
IPC: H01L27/04
Filed: 1995-03-27
Abstract: PURPOSE: To suppress the amount of power consumption to a minimum level and to secure adequate operating speed by controlling the voltage between the wells and the sources of a plurality of MOS transistors of an integrated logic circuit and the voltage of a power supply. CONSTITUTION: This circuit for controlling voltages has a reference MOS transistor 24, a comparator 21 for comparing the operating characteristic of the transistor 24 and a reference value, a voltage-controlled oscillator 22 for generating the controlled voltage which expresses the difference between the operating characteristic and the reference value, a multiplier 23 and a resistor 32. Furthermore, in order to keep the operation characteristic of the reference MOS transistor 24 at the reference value, an output terminal 31 for supplying the control voltage is provided between a well 2 and the source of the MOS transistor 24. By this circuit, the bias of the well of the MOS transistor 24 is controlled, and the threshold voltage of the MOS transistor 24 can be continuously set according to the operating conditions imparted to the reference transistor.  Therefore, the power consumption of the logic circuit can be made to be the lowest level.
Patent JP-H02272052-A (JP)
Title: Antistatic resin composition
Inventor: UEDA EIJI
IPC: C08L55/00
Filed: 1989-04-13
Abstract: PURPOSE:To provide a resin composition having semi-permanent antistaticity, excellent impact resistance, etc., by compounding a specific graft copolymer with polyethylene oxide having a specified mol.wt. in specific amounts. CONSTITUTION:An antistatic resin composition comprises (A) a graft copolymer prepared by graft-copolymerizing 2-60wt.% of a cyanated vinyl monomer and 10-90wt.% of a vinylic monomer selected from aromatic vinyl monomers and (meth)acrylate esters monomers to 5-60wt.% of a rubbery polymer, (B) a vinylic polymer, (C) polyethylene oxide having an average mol.wt. of 10000-1000000 and (D) an organic sulfonic acid metal salt, preferably a nucleus-substituted benzene sulfonic acid metal salt, wherein A, B and C+D are 50-98 pts.wt., 0-50 pts.wt. and 2-15 pts.wt., respectively, based on 100 pts.wt. of the sum of A, B and C and C/D is 0.2-20.
Patent JP-S5721236-A (JP)
Title: Parts supply device of automatic assembling machine
Inventor: SHINJIYOU KATSUMI
IPC: B65G11/00
Filed: 1980-07-05
Abstract: PURPOSE: To supply pierce nuts to an assembling device section located higher than a supply arranging hopper by providing more pressure with compressed air to those nuts supplied by its natural falling in a shoot hose.  
     CONSTITUTION: A supply device is made to that compressed air, supplied through a hose 19 connected to an feeding port 17 through a joint metal fitting 18, is fed into a shoot hose 12 from a ejection nozzle 20 provided on the bottom of the feeding port 17, toward direction of delivery. Accordingly, pierce nuts P descending by their own weight into the shoot hose 12 from supply arranging rails 11 are pressurized by compressed air ejected from the nozzle 20. As a result, those pierce nuts may be supplied to the assembling device section located higher than a rotary hopper 10 and further sent smoothly and certainly even through a complicated meandering route. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-S62250160-A (JP)
Title: Operating method for hot dip zinc coating line
Inventor: NAKAMURA AKIHIKO
IPC: C23C2/00
Filed: 1986-04-23
Abstract: PURPOSE:To execute satisfactory plating while adequately suppressing the generation of bottom dross by intensifying the stirring flow of stirrers in a melting pot in the stage of changing over the production to an as-plated steel sheet subjected to a hot dip zinc coating and alloyed steel sheet after plating. CONSTITUTION:A strip 4 is passed via a snout 7 and a sink roll 3 through a molten zinc pot 1 and the stirrers 5a, 5b are disposed before and behind the roll 3 in the pot 1. The strip 4 is subjected to the hot dip zinc coating treatment by stirring the inside of the bath by a driving motor 6. The as-plated steel sheet and the alloyed steel sheet to be subjected to a heating treatment for alloying after the plating are adequately changed over and are continuously produced in the continuous line constituted in the above-mentioned manner. The operation to intensity the stirring flow by the stirrers 5a, 5b is executed at the time of the above-mentioned change-over. The uniformity of the liquid in the bath is thereby attained and the generation of the bottom dross is suppress; further the bottom dross is recovered as top dross and the working efficiency is improved.
Patent JP-S62250315-A (JP)
Title: Flame detector
Inventor: YAMADA KOUJIROU
IPC: G01J1/02
Filed: 1986-04-23
Abstract: PURPOSE:To eliminate the lowering and irregularity in light transmissivity, and to improve the yield in a flame detector requiring a bent optical axis, by using a metal coated optical fiber as the optical fiber of a light guiding part. CONSTITUTION:An Al coated optical fiber 21 is inserted in a stainless steel pipe 20 and mechanical plastic deformation is applied to the pipe 20 to form a bent optical fiber 18. If the inner diameter of the pipe 20 is set to 130-150% of the outer diameter of the Al coated optical fiber 21, the bending angle thetaof 50-60 deg. can be realized by the mechanical bending of the pipe 20 without damaging the fiber 21. By this constitution, because the lowering in light transmissivity is purely caused only by an increment in light transmission loss due to mechanical bending and there is no increase in light transmission loss due to heat processing, the lowering in the light transmissivity is reduced. Further, because the lowering and irregularity in light transmissivity due to mechanical bending is extremely low as compared with that due to thermal bending processing, there is no obstacle in a flame detector and the lowering in the yield of a product is not generated at all.
Patent JP-H10280634-A (JP)
Title: Handrail
Inventor: TAI TOSHIO
IPC: E04F11/18
Filed: 1997-04-10
Abstract: PROBLEM TO BE SOLVED: To provide such a handrail as being capable of easily doing work for mounting a coping and work for mounting metal fixtures on supports. SOLUTION: For a handrail 10, supports 1 are raised at spaces along a slope passage, a coping 3 is mounted on the supports 1 via links 2 and an upper crosspiece 5 is mounted almost in parallel to the coping 3 via metal fixtures 4 mounted on the upper front and rear faces of the supports 1 in double levels. The link has the coping joint 24 oscillatably and pivotally supported on a placement part 21 applied to the upper end face of the support 1 in a square cylindrical shape and a long leg 22 and a short leg 23, opposing each other, inserted in the support 1 and screwed to the fixture 4 to be vertically provided on both front and rear sides of the lower face of the placement part 21.
Patent JP-S61252663-A (JP)
Title: Manufacture of semiconductor device
Inventor: ETSUNO YUTAKA
IPC: H01L29/74
Filed: 1985-05-01
Abstract: PURPOSE:To obtain the characteristic of high withstanding voltage, by diffusing reverse conducting type impurities from the surface of a recess part, which is formed by isotropic etching of a part of a one-conducting type substrate, selectively diffusing one-conducting type impurities from a part of the bottom part of the recessed part, and forming an electrode wiring, which is terminated in the bottom part. CONSTITUTION:On a substrate 10, on which N<+> high concentration layer 11 is formed, an SiO2 film 12 is formed. An opening 13 for diffusing a P-type base layer is formed. With the SiO2 film 12 as a mask, isotropic etching of the substrate 10 is performed, and a recessed surface 14 is formed. Then, a mixed film of the oxide of P-type impurities and SiO2 is deposited on the recessed surface 14. With this film as a diffusing film, a P-type diffused layer 15 is formed. After the SiO2 film 12 is removed, an SiO2 film 21 is formed on the surface of the substrate including the recessed surface 14. An opening 22 is formed in a part of the SiO2 film 21 at the bottom part of the recessed surface. The mixed film of the oxide of the N-type impurities and SiO2 is formed on the surface of the opening. With the mixed film as an impurity diffusing source, an emitter layer 23 of the N-type impurities is formed. Then, a CVD insulating film 31 is deposited on the substrate including the recessed surface. A part of the insulating film 31 and the oxide film 21 is removed. Openings 32 are formed, and electrode wirings 33 are formed. Thus, accuracy in base width is improved, and excellent etching characteristics can be obtained.
Patent JP-H11271268-A (JP)
Title: Ion concentration computing method, ion concentration computing unit, and electrolyzed water producing apparatus
Inventor: TATSUMI YOSHIKI
IPC: G01N27/49
Filed: 1998-03-20
Abstract: PROBLEM TO BE SOLVED: To provide a hydrogen ion concentration measuring method and device capable of measuring hydrogen ion concentration with high precision, and an electrolyzed water producing apparatus with controlled hydrogen ion concentration by using the hydrogen ion concentration measuring device. SOLUTION: Electric power for electrolysis is supplied from a power source 26 to an electrolytic cell 10 to which an aqueous solution containing chloride ion is supplied from an aqueous solution supplying means 18, so as to electrolyze the solution. An electrolysis voltage in the electrolysis of the solution is measured by a voltmeter 54. Chlorine gas generation reaction ratios by oxidation of the chloride ion in plural electrolysis voltages and the respective electrolysis voltages corresponding to the ratios are stored in a memory part 60.  The generation reaction ratios corresponding to the voltages detected by the voltmeter 54 are read out from the memory part 60 to be supplied to a hydrogen ion concentration computing expression having the generation reaction ratio and the voltage as variables, and including as constants a dissolution rate constant in dissolving of the chlorine gas into the solution and a hydrolysis reaction rate constant in producing of chloride ion by hydrolysis of the chlorine gas dissolved into the solution, and the voltages detected by the voltmeter 54 are substituted to compute a hydrogen ion concentration by an operation part 58.
Patent JP-H06297973-A (JP)
Title: Power transmission for vehicle
Inventor: YAMOTO MITSUHIRO
IPC: B60T8/1769
Filed: 1993-04-20
Abstract: PURPOSE:To reduce the lock braking torque of individual driving wheels so as to improve braking stability by providing a control means for heightening the locking force of a locking force variable clutch in the case of judging the lock of the driving wheel by a wheel lock judging means and lowering the locking force in the case of the driving wheel on the driven side being locked. CONSTITUTION:On the basis of input signals from a brake switch 31, an ABS control unit 41, and the like, a clutch control unit 43 judges which wheel is locked, whether or not the brake switch 31 is on, and the like. On the basis of the judgment, the clutch control unit 43 controls a current, fed to a locking force variable clutch 20, through an actuator 25 so as to control the locking force. In the case of a front wheel being locked, the current I0 to be fed to the clutch 20 is increased by DELTAI1 so as to heighten the locking force, and braking torque is distributed to the rear wheel side. In the case of a rear wheel being locked, the current I0 is decreased by DELTAI2 so as to reduce braking torque on the rear wheel side.
Patent JP-H11268995-A (JP)
Title: Production of silicon carbide single crystal
Inventor: HARA KAZUTO
IPC: H01L21/205
Filed: 1998-03-20
Abstract: PROBLEM TO BE SOLVED: To obtain a single crystal membrane of 4H type silicon carbide with a large diameter usable as seed crystal in the sublimation method and make growable a single crystal of 4H type silicon carbide of high quality and a large diameter thereon. SOLUTION: When a 3C type silicon carbide single crystal membrane 2 is epitaxially grown on a silicon single crystal substrate 1, the third element such as cerium is admixed as a dopant. The 3C type silicon carbide single crystal membrane 2 removed from the silicon single crystal substrate 1 is heat- treated at an elevated temperature over 2,000 deg.C to cause polymorphic transformation to 4H type silicon carbide single crystal membrane 2'. The resultant single crystal membrane 2' is used as a seed crystal whereby 4H type silicon carbide single crystal of high quality can be grown.
Patent JP-H02273312-A (JP)
Title: Information recording and reproducing head
Inventor: SAKAI KAZUO
IPC: G11B5/53
Filed: 1989-04-14
Abstract: PURPOSE:To control the vibration of an information recording medium, and stably fetch an output by providing a rotatable second head which does not record/reproduce information on a front side in the rotating direction of a rotary head. CONSTITUTION:A second head 2 is arranged on electrostrictive elements 5a and 5b ahead of a rotary head 1. When a constant voltage is applied in the width direction of the elements 5a and 5b, the head is expanded/compressed in the longitudinal direction, when a potential on the external side of the elements 5a and 5b is zero and the voltage is applied from a power source 10 to the center part of the elements 5a and 5b, for example, the element 5a is compacted, and the element 5b is expanded to the contrary. Since the elements 5a and 5b are mutually bonded at the center part, the whole element 5 is displaced, and the second head 2 provided at the tip of the element 5 is displaced as shown in a figure. Since the displacement quantity of the element 5 can be controlled by the voltage, the head 2 can be displaced so as to slightly project to the external periphery of a drum 6. When the rotary head rushes or separates with respect to an information recording medium 7, the vibration of the medium 7 can be controlled by displacing the second head 2 and making contact with the medium 7.
Patent JP-H04304885-A (JP)
Title: Method for purifying glucokinase
Inventor: NAGATA KAZUHIKO
IPC: C12N9/12
Filed: 1991-03-29
Abstract: PURPOSE:To specifically purify the subject enzyme in high yield with a small column volume by bringing an enzymic solution containing a glucokinase derived from a microorganism into contact with a water-insoluble support using a coloring matter such as Reactive Yellow 7 as a ligand, adsorbing the glucokinase and then eluting the glucokinase. CONSTITUTION:Wet microbial cells of a microorganism (e.g. Zymomonas.mobilis ATCC29191 strain) are suspended in a 25mM potassium phosphate buffer solution (pH 8) containing 2mM magnesium chloride and 10mM 2-mercaptoethanol and crushed with a cell crusher. Acetic acid is then added to regulate the pH to 6. Insoluble substances are subsequently removed by centrifugation to bring a glucokinase-containing enzymic solution into contact with a water-insoluble support using at least one coloring matter such as Reactive Yellow T, reactive Yellow 81 and Reactive Orange 84 as a ligand. The glucokinase is then adsorbed on the adsorption support to elute the adsorbed glucokinase. Thereby, purification is carried out to afford the high-purity glucokinase in high yield.
Patent JP-H03290320-A (JP)
Title: Production of bi-based oxide superconductor melt
Inventor: FURUKAWA KOICHI
IPC: C01G1/00
Filed: 1990-04-06
Abstract: PURPOSE:To reduce production cost by melting a compound containing constituent elements of a Bi-based oxide superconductor, providing a primary melt, individually supplying and adding specific simple substances and/or compounds so as to afford the objective composition and melting the resultant mixture. CONSTITUTION:Compound powders such as Bi2O3, SrCO3, CaCO3 and CuO containing constituent elements of a Bi-based oxide superconductor are melted by heating to provide a primary melt, which is then kept at a prescribed temperature. Supply raw materials such as compounds and/or simple substance powders such as Bi2O3, SrCO3, CaCO3 and CuO containing the constituent elements of the Bi-based oxide superconductor are successively and individually charged into the aforementioned primary melt to afford a complete melt and provide the Bi-based oxide superconductor melt of the objective composition.
Patent JP-H03291362-A (JP)
Title: Method for preventing blister in al alloy material
Inventor: ISAKI HIROSHI
IPC: C22F1/00
Filed: 1990-04-06
Abstract: PURPOSE:To prevent the occurrence of blister at the time of solution treatment by subjecting an Al alloy stock to preheating in a specific temp. region and then to solution treatment. CONSTITUTION:An Al alloy stock prepared by applying hot plastic working to an Al alloy powder is held in a temp. region of 300-480 deg.C for about 1-3hr per inch of thickness to undergo preheating, and then solution treatment is carried out. Further, after solution treatment, artificial ageing treatment or natural ageing treatment (standing in the air) is exerted according to the material. By this method, the occurrence of blister at the time of solution treatment can be effectively prevented, and mechanical properties can be improved.