Patent SG-11201811778P-A (SG)
Title: Substrate supporting apparatus
Inventor: CHEN FUFA
IPC: H01L21/67
Filed: 2016-07-06
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1111111111111111111111111111111111111111111111111111111111111111111111111110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date ......0\" WO 2018/006283 Al 11 January 2018 (11.01.2018) W I PO I PCT (51) International Patent Classification: Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). HO1L 21/67 (2006.01) CHEN, Fuping; Bld. 4, No. 1690 Cailun Road, Zhangjiang (21) International Application Number: High-tech Park, Shanghai 201203 (CN). WANG, Wenjun; PCT/CN2016/088754 Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). (22) International Filing Date: (74) Agent: SHANGHAI PATENT & TRADEMARK LAW 06 July 2016 (06.07.2016) OFFICE, LLC; 435 Guiping Road, Shanghai 200233 (25) Filing Language: English (CN). (26) Publication Language: English (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, (71) Applicant: ACM RESEARCH (SHANGHAI) INC. AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, [CN/CN]; Bld. 4, No. 1690 Cailun Road, Zhangjiang High- CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, tech Park, Shanghai 201203 (CN). EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, (72) Inventors: CHEN, Fufa; Bld. 4, No. 1690 Cailun HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, FANG, Zhiyou; Bld. 4, No. 1690 Cailun Road, Zhangjiang MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, High-tech Park, Shanghai 201203 (CN). WU, Jun; Bld. 4, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shang- hai 201203 (CN). WANG, Hui; Bld. 4, No. 1690 Cailun — = (54) Title: SUBSTRATE SUPPORTING APPARATUS = 305a 301 305b Ariimr .. . largrer , 41 r = Li 40 - 4- '4 = ....pg. = OM 411.11W3 327 343 = 303 = — 325 = 341 ------ = 323 I I IV _ -- 327 pia ...... 325 .\"--- = i = 321 ---- = salliir — 323 -- 321 319 ,-1 .4 M GC el (57) : A substrate supporting apparatus (300) for cleaning 4: apparatus (300) has a hollow shaft (319) and a rotary spindle (303). spacing is formed between an outer wall of the rotary spindle (303) and an inner wall of the hollow shaft (319). The outer wall of the 0 —. rotary spindle (303) defines a blocking wall (322) and a recess (324) GC , 1 which is formed on the hollow shaft (319) and supplies gas to a front © the front side of the substrate (107), which improves the quality of ei FIG 16 a back side of a substrate (107) is provided. The substrate supporting The rotary spindle (303) is set in the hollow shaft (319) and a to prevent particles in the spacing from entering a gas groove (325) side of the substrate (107), avoiding the particles contaminating semiconductor devices. C [Continued on next page] WO 2018/006283 Al MIDEDIMOMOIDEIREEMOOVIEMIOHNOMMOIMIE SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))