baber/WOPTO huggingface dataset:
Patent TW-278204-B (TW)
Title: Plasma sputter etching system with reduced particle contamination
Inventor: ALEXANDER D LANTSMAN
IPC: H01J37/32
Filed: 1995-11-08
Granted: 1996-06-11
Abstract: A plasma processing system for sputter etching a substrate with reduced particle contamination comprises a plasma processing chamber having an interior surface which defines a processing space containing a substrate. An electrical element couples electrical energy into a portion of the processing space to generate a plasma therein for etching the substrate. A heating device is coupled to the reactor and is operable for controllably heating the processing chamber interior surface to a selected temperature. The heating device is controlled by a temperature control circuit which turns the heating device to an ON state and operates the heating device to heat the processing chamber to a selected temperature when the electrical element is not coupling energy to the processing chamber and the plasma is extinguished. The selected temperature achieved by the heating device is related to the temperature of the processing chamber during plasma generation such that the interior surface is maintained at a relatively constant temperature before, during and after processing to prevent flaking of sputter material from the interior surface and generation of contamination particles within the processing space.
Patent TW-330303-B (TW)
Title: Manufacturing method of bonding SOI substrate and bonding SOI substrate
Inventor: KAWANO MITSUO
IPC: H01L21/02
Filed: 1995-12-11
Granted: 1998-04-21
Abstract: A manufacturing method of bonding SOI substrate has the features that after bonding dislocation-free monocrystalline silicon wafer of specific shape with applied mirror machining and oxidization treatment to supporting substrate constituted by polysilicon with large diameter, glass, ceramic or metal with applied mirror machining, grinding said dislocation-free monocrystalline silicon wafer to predetermined thickness.
Patent TW-327654-B (TW)
Title: Tin-lead alloy plating bath composition
Inventor: NISHIKAWA TETSUHARU
IPC: C25D3/32
Filed: 1996-06-13
Granted: 1998-03-01
Abstract: A tin-lead alloy plating bath composition characterized in that the bath comprises: (A) soluble metallic salts consisting of a mixture of a stannous salt and a lead salt, in which the total amount of the stannous metal and the lead metal is 0.5~200 g/l, (B) 20~400 g/l of at least one organic sulphonic acid selected from an alkane sulphonic acid and an alkanol sulphonic acid, (C) 0.01~50 g/l of at least one water-soluble nonionic surfactant, and (D) 0.01~10 g/l of at least one compound selected from an alkyl naphthalenesulphonic acid and a salt thereof represented by the formula (I) (I) in which R1 represents a linear or branched C2-5 alkyl group; M represents hydrogen, an alkaline metal, an alkaline earth metal, or ammonium; provided that the substitution positions of R1 and SO3M are not specifically limited; m represents an integer of 1 to 3 and n represents an integer of 1 to 2.
Patent TW-308729-B (TW)
Title: Semiconductor memory device with capacitor (3)
Inventor: JAW FANG-CHINQ
IPC: H01L21/70
Filed: 1996-08-16
Granted: 1997-06-21
Abstract: A semiconductor memory device with capacitor comprises of: (1) one substrate; (2) one transfer transistor formed on the substrate, and including drain and source region; (3) one storage capacitor electrically coupled to one of drain and source region of the transfer transistor; The storage capacitor comprises of: (1) one trunk-type like conductive layer with one bottom electrically coupled to one of drain and source region of the transfer transistor, and with one upward extending part from the bottom with one approximately upward direction; (2) at least one branch-type like conductive layer, with shape like hollow pipe, and one end terminal of the branch-type like conductive layer is connected to upper surface of the branch-type like up conductive layer, and extending upward with one approximately upward direction, in which the trunk-type like conductive layer and the branch-type like conductive layer constitute one storage electrode of the storage capacitor; (3) one dielectric formed on the trunk-type like conductive layer, and exposed surface of the branch-type down conductive layer; and (4) one upper conductive layer formed on the dielectric to constitute one opposed electrode of the storage capacitor.
Patent TW-457275-B (TW)
Title: Organopolysiloxane compounds cross-linkable by cleaving of alcohols to form elastomers
Inventor: OBERNEDER STEFAN
IPC: C08L83/04
Filed: 1996-08-21
Granted: 2001-10-01
Abstract: The invention relates to organopolysiloxane compounds which can be stored subject to the exclusion of moisture, can be cross-linked by cleaving of alcohols to form elastomers when moisture gains access at room temperature and are based on (A) polydiorganosiloxanes with organyloxy groups, optionally (B) organyloxy functional cross-linkers with at least three organyloxy groups, and optionally (C) condensation catalysts, characterised in that they contain at least one (D) compound selected from the compounds (Da) to (Df) given in claim 1.
Patent TW-449484-B (TW)
Title: Water-in-oil type emulsion cosmetic composition having a good spreadability, a fresh feeling in use and good stability
Inventor: NAKAMURA TADASHI
IPC: A61K8/25
Filed: 1996-09-26
Granted: 2001-08-11
Abstract: A water-in-oil type emulsion cosmetic composition comprising a mixed powder of (A) an organopolysiloxane elastomer spherical powder having an average particle size of 2.0 to 5.0 mu m and a particle size distribution of 1 to 15 mu m and (B) a hydrophobic silica powder having an average particle size of not more than 0.2 mu m, wherein the weight ratio of (A) to (B) is 1:0.1 to 1:5, (C) an oil phase or (C') an oil phase containing at least 30% by weight, based upon the total oil phase component, of silicone oil, (D) an emulsifying agent having an HLB value of not more than 7, and (E) water, and, optionally, (F) a metallic soap or (G) an organically modified clay mineral.
Patent TW-332360-B (TW)
Title: A digital communication system, a communication station for use in the system, and a method for use in the station
Inventor: WALTER JEROEN SLEGERS
IPC: H04J3/00
Filed: 1996-11-13
Granted: 1998-05-21
Abstract: A digital communication system, which includes a first communication station having first digital wireless machine, a second communication station having second digital wireless machine for performing wireless communication with first communication station, and is for use in voice and non-voice communication, features that the system can request to setup at least a wireless channel in accordance with setup of the said any one communication station, upon receiving a request connecting the first and second communication stations so as to use the said setup channel to perform voice and/or non-voice mode communications, and upon receiving another connection request changing voice and/or non-voice communication mode on the said setup wireless channel, and without releasing the said setup channel, therefore exchanging reliable data with non-voice communication mode after using a reliable data protocol.
Patent TW-313699-B (TW)
IPC: H01L21/28
Filed: 1996-11-14
Granted: 1997-08-21
Abstract: PCT No. PCT/DE96/02121 Sec. 371 Date May 29, 1998 Sec. 102(e) Date May 29, 1998 PCT Filed Nov. 7, 1996 PCT Pub. No. WO97/20336 PCT Pub. Date Jun. 5, 1997In order to produce an MOS transistor in an SOI substrate, the silicon layer (3), a gate dielectric (4) and an electrode layer (5) are structured in MESA fashion to form an active region. The flanks of the MESA structure (7) are provided with insulating spacers (8). In a further structuring step, a gate electrode (12) is formed from the electrode layer (5). The process provides a high packing density and at the same time avoids the problem of gate side-wall control as well as premature breakdown at oxide edges.
Patent TW-318283-B (TW)
Title: Multi-level read only memory structure and manufacturing method thereof
Inventor: UEN RONG-MAW
IPC: H01L27/112
Filed: 1996-12-09
Granted: 1997-10-21
Abstract: A manufacturing method of multi-level read only memory comprises of the following steps: (1) supplying one first-type substrate, on the substrate forming one pad oxide; (2) on the substrate along one first orientation forming multiple first trenches in parallel arrangement; (3) on the substrate and those first trench surfaces forming one insulator; (4) on the insulator surface forming one second-type first conductive layer, and filling those first trenches; (5) removing partial second-type first conductive layer, making residual second-type first conductive layer left in those first trenches, and with surface lower than the substrate surface; (6) removing the insulator until the insulator surface is a bit lower than the second-type first conductive layer surface; (7) forming one second-type second conductive layer, and filling those first trenches; (8) etching back the second-type second conductive layer until the substrate surface, in which the second-type second and first conductive layer constitute source/drain region; (9) removing the pad oxide; (10) on the substrate along one second orientation forming multiple second trenches in parallel arrangement; (11) forming one first photoresist, by photolithography process patterning the first photoresist to expose partial those second trenches; (12) performing impurity doping, on two sides and bottom of exposed those second trenches forming multiple impurity diffusion regions, then removing the first photoresist; (13) on the substrate and those second trench surfaces forming one dielectric with one thicker bottom; (14) removing dielectric on two sides of the second trench until on those second trench bottom the dielectric with one specific thickness is reserved; (15) forming one second photoresist layer, by photolithography process patterning the second photoresist to expose partial dielectric; (16) removing exposed dielectric, then removing the second photoresist; (17) forming one gate oxide; (18) on the gate oxide surface forming one third conductive layer, and filling those second trenches; (19) by etching patterning the third conductive layer as gate.
Patent TW-400567-B (TW)
Title: The polishing device and its polishing method for the substrate
Inventor: NISHIO MIKIO
IPC: B24B37/04
Filed: 1996-03-07
Granted: 2000-08-01
Abstract: An elastic polishing pad is stuck to the top of a rotatable turn table. A substrate holder for holding a substrate is positioned above the turn table. The substrate holder consists of a rotational shaft; a disk-shaped substrate holding head integrally formed on the lower end of the rotational shaft; a ring-shaped elastic sealing member secured on the peripheral portion of the underside of the substrate holding head; and a ring-shaped guiding member secured on the underside of the substrate holding head outside the sealing member. Pressurized fluid, introduced into the rotational shaft at one end, is supplied to a hollow portion at the other end through a fluid flowing path and there presses the substrate against the polishing pad.
Patent TW-392237-B (TW)
Title: Polishing cloth for use in a CMP process and a surface treatment thereof
Inventor: NAKAMURA KO
IPC: B24B53/017
Filed: 1997-06-27
Granted: 2000-06-01
Abstract: A method of fabricating a semiconductor device includes a step of polishing a surface of a substrate by a chemical mechanical polishing process conducted on a polishing cloth by a slurry. The polishing is conducted so that projections having a height of about 30 mu m or less are formed on the polishing cloth with an interval of about 55 mu m or less as a result of the polishing.
Patent TW-434292-B (TW)
Title: Low arene content thermoplastic elastomer/oil/polyolefin composition
Inventor: DJIAUW LIE KHONG
IPC: C08L53/02
Filed: 1997-07-07
Granted: 2001-05-16
Abstract: The present invention relates to a thermoplastic elastomer composition comprising: a base composition comprising: (i) 65 to 90 weight percent of a block copolymer having at least two polymerised monovinyl aromatic endblocks having a molecular weight of less than 20000 and a midblock of hydrogenated polymerised diene, wherein said endblocks constitute less than 20 weight percent of said block copolymer, (ii) 5 to 25 weight percent of a paraffinic oil, and (iii) 5 to 15 weight percent of a crystalline polyolefin. The present invention further relates to a process for preparing a thermoplastic elastomer composition and to articles containing the thermoplastic elastomer composition.
Patent TW-329555-B (TW)
Title: Chip frontal temperature processing device
Inventor: CHEN JAU-JEN
IPC: H01L23/34
Filed: 1997-09-01
Granted: 1998-04-11
Abstract: A chip temperature processing device for temperature processing of the photo-resistant layer covering the chip surface consists of at least the following: A base chamber for accommodating composition elements of the chip temperature processing device; A temperature control device in the base chamber for generating a temperature difference on the photo-resistant layer on the chip surface; and A chip fixing device in the base chamber for holding the chip such that there will be no relative motion between the chip and the chip fixing device due to gravity.
Patent TW-344935-B (TW)
Title: Piezoelectric sounder and its manufacture
Inventor: SENOO MASAO
IPC: H01L41/22
Filed: 1997-09-30
Granted: 1998-11-11
Abstract: A piezoelectric sounder essentially comprising a piezoelectric vibrator consisting of a metal-made vibration diaphragm pressed on a piezoelectric ceramic element, and a case housing the piezoelectric vibrator and the outer periphery of the metal-made vibration diaphragm being adhered to the inner wall of the circumferential wall of the case through an adhesive layer; which is characterized in that an annular adhesion tilt face is formed on the inner wall of the case surrounding the outer periphery of the metal-made vibration diaphragm; the adhesive layer is formed by coating the adhesion tilt face.
Patent TW-381381-B (TW)
Title: Antenna system for an RF data communications device
Inventor: ZHU LIZHONG
IPC: H01Q9/16
Filed: 1997-10-01
Granted: 2000-02-01
Abstract: An RF data communications device antenna system is shown that includes a dipole and an electromagnetic coupler that provides coupling between each dipole arm to establish a desired resonant bandwidth. An LC matching circuit is provided for matching the dipole to the impedance of the RF data communications device and for transforming the RF signal between the dipole arms of the antenna system.
Patent TW-470762-B (TW)
Title: Conductive polyacetal composition
Inventor: THIELEN ALAIN
IPC: C08K3/00
Filed: 1997-10-28
Granted: 2002-01-01
Abstract: An electrically conductive polyacetal composition having improved toughness and flexibility, as well as good fluidity and processability. The composition includes an oxymethylene polymer, an elastomeric polyurethane, and an electrically conductive carbon black having a lower structure level (DBP absorption) and larger particle size (lower surface area) than conductive carbon blacks heretofore used in these compositions. The composition includes between about 65 and about 85 percent, by weight, of the oxymethylene polymer, between about 10 and about 20 percent, by weight, of the electrically conductive carbon black, and between about 10 and about 20 percent, by weight, of the elastomeric polyurethane. The electrically conductive carbon black has a surface area BET(N2) of between about 40 and about 100 m<SP>2</SP>/g, and a pore volume, DBP absorption, of between about 150 and about 350 ml/100 g. The electrically conductive carbon black used in the present compositions is more easily dispersed in the composition polymers and lessens any increase in melt viscosity during compounding.
Patent TW-379156-B (TW)
Title: Combpound chuck
Inventor: NORDQUIST HAKON
IPC: B23Q16/08
Filed: 1998-01-14
Granted: 2000-01-11
Abstract: The present invention relates to a compound chuck, having a workpiece-machining head (1) having a coupling member (40), a joint coupling adapter (90) and a drag pin (30); disposed on the workpiece machining head (1) clamping devices (10, 15, 17, 19, 20) activated by compressive medium for the drag pin (30), the coupling member (40) for a first reference system has an axial reference axis (Z-axis)(50) and Z-reference defining reference elements (42, 44, 46; 41, 43, 45) disposed on the front of the vertical reference axial plane and having the coupling adapter (90) on its front face the reference adapters (91, 93, 98; 95, 97, 99) for the first base system, so that the clamping system could be used in a wide varity of purposes, being the disposition thus to have the coupling member (40) be surrounded by a coupling part (60), having the axis in parallel extension to the reference axis (50), having the Z'-reference defining reference elements (61, 63, 65, 67; 72, 74, 76, 78) being the reference elements disposed in a second reference system.
Patent TW-389922-B (TW)
Title: Air blast buffered breaker
Inventor: TAKAYANAGI MASAAKI
IPC: H01H33/42
Filed: 1998-08-04
Granted: 2000-05-11
Abstract: This invention is related to a buffered type air blast breaker that has the capability of decreasing the second half route speed of the buffered air chamber by use of little amount of operating energy. The operation principle is described as follows. At first, the vibration range of the input rod 117 at the second half route is set with an angle from 0 degree to 30 degree. The input rod 117 and the output rod 118 are circling in the planes of the same spin axle with a relatively constant angle difference. The vibration range of the output rod 118 at the second half route is set with an angle between 30 degree and 90 degree. The nonlinearity generated from the routes of the vibration rods is then used to make the buffered air chamber decrease speed
Patent TW-383466-B (TW)
Title: Manufacturing method for preventing bridge and current leakage of contact
Inventor: LI TZUNG-HAN
IPC: H01L21/768
Filed: 1998-08-19
Granted: 2000-03-01
Abstract: A kind of manufacturing method for preventing bridge and current leakage of contact includes the following steps : the provided substrate at least formed a gate structure and a source/drain area, and covered by the dielectric; and forming contact opening in the dielectric to expose the source/drain area and gate structure; then, forming epitaxy silicon layer on the exposed source/drain area and gate structure which is higher than the substrate and then applying ion implantation process to increase the conductivity of epitaxy silicon layer; then, depositing metal layer on the contact and dielectric; to react the metal layer with the epitaxy silicon layer to form a metal silicide on the surface of epitaxy silicon at high temperature; and to fill up conductive layer in the contact opening to complete the processes for contact.
Patent TW-406453-B (TW)
Title: Electrical connector with a mating portion defined by a metallic shell
Inventor: HISAMATSU KAZUHITO
IPC: H01R12/16
Filed: 1998-10-02
Granted: 2000-09-21
Abstract: In an electrical connector to be surface-mounted on a printed circuit board, which comprises an insulator body, a plurality of contacts fixed to the insulator body, and a metallic shell fitted on the insulator body, the contacts having contact portions in a mating hole for receiving a mating plug connector, the insulator body is formed with a pair of pillars extending in parallel with the contacts for supporting the metallic shell. The mating hole is defined by the metallic shell supported by the pillars so that the contacts are enclosed directly by the metallic shell without insulator walls therebetween.
Patent TW-382050-B (TW)
Title: Tube fitting
Inventor: KOUDA TORU
IPC: F16L37/47
Filed: 1998-10-03
Granted: 2000-02-11
Abstract: To provide a tube fitting which is outstanding in operation and function. Once the external sleeve 1 is withdrawn, the inner sleeve 9 is engaged with the external sleeve 1 by means of the lock ball 62 and starts to retrocede with external sleeve 1, but the slide holder 8 is pressed toward the rear end by the pressure till the internal pressure drops down to the predetermined value, so the lock ball 61 of the socket 4 remains restrained on the radiating side. As a result, the retrocession of the internal sleeve 9 as well as the external sleeve 1 are obstructed by the lock ball 61. When the retrocession of the internal sleeve 9 is obstructed, the movement of the radiating direction of the lock ball 63 is obstructed by the internal sleeve 9, so a part of the lock ball 63 protrudes to the inside of socket 4 to engage with the peripheral groove 200b mounted on the external periphery of plug 200 for preventing the plug 200 from breaking away.
Patent TW-382590-B (TW)
Title: Novel shoe sole for bonding
Inventor: KODO KEIUN
IPC: A43B13/12
Filed: 1998-11-11
Granted: 2000-02-21
Abstract: The present invention relates to a novel shoe sole which can provide a method for manufacturing a shoe without using any solvent based adhesives, and the shoe sole can be very easily peeled off out of the formed shoe for repair. The shoe sole of the present invention has an adhesive layer between an midsole and an out-sole, being composed of an adhesive and a hysteric material. The shoe manufacturing process is practiced by using high frequency electromagnetic heating method.
Patent TW-402784-B (TW)
Title: Interconnect structure in a semiconductor device and method of formation
Inventor: SIMPSON CINDY REIDSEMA
IPC: H01L29/78
Filed: 1998-12-24
Granted: 2000-08-21
Abstract: In one embodiment, a conductive interconnect (38) is formed in a semiconductor device by depositing a dielectric layer (28) on a semiconductor substrate (10). The dielectric layer (28) is then patterned to form an interconnect opening (29). A tantalum nitride berrier layer (30) is then formed within the interconnect opening (29). A catalytic layer (31) comprising a palladium-tin colloid is then formed overlying the tantalum nitride barrier layer (30). A layer of electroless copper (32) is then deposited on the catalytic layer (31). A layer of electroplated copper (34) is then formed on the electroless copper layer (32), and the electroless copper layer (32) serves as a seed layer for the electroplated copper layer (34). Portions of the electroplated copper layer (34) are then removed to form a copper interconnect (38) within the interconnect opening (29).
Patent TW-374892-B (TW)
Title: Sporting and sieving device for coins
Inventor: ABE HIROSHI
IPC: G07D3/06
Filed: 1999-01-26
Granted: 1999-11-21
Abstract: The present invention aims to, besides a simplified sorting device for coins, lower the overall height of said coin apparatus. The other purpose of the present invention aims t have the overall shape of the coin apparatus be made in a rectangular shape. The present invention, for its thin and long carrier tape for coins, largely simplifies the sorting device. Besides, thanks to the coin detector and the coin-receiving switch disposed beneath the coin passage, the overall height of the device is largely reduced. Again, thanks to the plurality of funnels disposed abreast, said sorting device is made into a compact and rectangular shape. Besides the large variety of coins for sorting in this invention, the invention is capable of changing the sequence of sorting coins.