baber/WOPTO huggingface dataset:
Patent TW-200408230-A (TW)
Title: Wireless home entertaining on-line system
Inventor: Cai guo-rui
IPC: H04L12/46
Filed: 2002-11-15
Abstract: A wireless home entertaining on-line system, in particular the one enabling user to operate home entertaining equipment or get on internet using wireless means, comprises a wireless on-line system and a wireless transmission module, in which the wireless on-line system can communicate with the wireless transmission module using wireless means, and both of them are connected to an output equipment and a home entertainment equipment respectively. The home entertainment equipment can deliver a data flow such as data, voice and video to the output equipment for user to enjoy or utilize in a wireless way through the wireless on-line system and a wireless transmission module.
Patent TW-200302670-A (TW)
Title: Authentication in a hybrid communications network
Inventor: RIMONI YORAM
IPC: H04W12/06
Filed: 2002-12-06
Abstract: A method of authenticating a mobile station from a first base station in a first cellular communications system controlled by a first mobile switching control station to a second base station in a second, different cellular system controlled by a second mobile switching control station is described. The method comprises generating at the second cellular communication system an authentication code as the result of applying an algorithm to a private key assigned to the mobile station for the second cellular communications system and a random number-generated by the second cellular communications system. An authentication code is also generated at the first cellular communication system as the result of applying an algorithm to the private key and the random number. The authentication code generated at the first cellular communication system is then transmitted to a mobile station in a data packet, and, from there, the authentication code is transmitted to the second cellular communication system. The authentication code generated at the first cellular communications system is then compared with the authentication code generated at the second cellular communications system.
Patent TW-200412070-A (TW)
Title: System and method for displaying working status information of networking devices
Inventor: CHEN YI-CHIEN
IPC: G09G5/00
Filed: 2002-12-27
Abstract: A system and method for displaying working status information of networking devices is provided. The system is implemented in a networking infrastructure which comprises an administrative workstation and at least one networking devices. The administrative workstation can obtain and display working status of the networking device in time. The administrative workstation comprises a network monitoring module for obtaining working status of the networking device, a database for storing data on working status of the networking device, a work status displaying module for determining whether the networking device is abnormal according to data stored in the database and displaying working status in designated interfaces when the working status of the networking device has an alternation.
Patent TW-200302524-A (TW)
Title: Method of increasing the etch selectivity of a contact sidewall to a preclean etchant
Inventor: YUAN ZHENG
IPC: H01L21/306
Filed: 2002-12-27
Abstract: A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin silicon nitride layer on an outer surface of the contact hole. The silicon nitride layer reduces overetching that may otherwise occur when oxidation build-up is removed from the silicon interface within the contact hole by a preclean process. After the preclean process, the contact hole is then filled with one or more conductive materials. In various embodiments the silicon nitride layer is formed by exposing the contact hole to a nitrogen plasma, depositing the layer by a chemical vapor deposition process and depositing the layer by an atomic layer deposition process. In other embodiments, the method is applicable to the formation of vias through intermetal dielectric layer.
Patent TW-200413836-A (TW)
Title: Method for repairing mask by using multiple phase steps
Inventor: LIN CHENG-MING
IPC: G03F1/00
Filed: 2003-01-24
Abstract: A method for repairing a mask by using multiple phase steps is disclosed. The method forms multiple phase steps beside a pit defect on a transparent substrate of a mask by removing part of the transparent substrate. With the multiple phase steps, the light destructive interference on the edge of the pit defect can be decreased, and the light intensity of the pit defect can be increased, thereby obtaining a purpose of effectively repairing the pit defect of the mask.
Patent TW-200302637-A (TW)
Title: Frequency offset estimating device applicable to channel with intersymbol interference
Inventor: CHEN HUNG-KUEN
IPC: H04L27/00
Filed: 2003-01-30
Abstract: A frequency offset estimating device applicable to channel with inter-symbol interference provides a storage area with M units to firstly shift sampled sequence by M samples in generation of delay sampled sequence. The differential unit conducts differential operation between the received sampled sequence and the delayed sampled sequence to acquire initial value sequence. The power operator next calculates the power of the initial value sequence and then the accumulator calculates the sum of power of the initial value sequence among M samples to get the accumulated value. Subsequently, an angle extractor is used to acquire angle of the accumulated value. The shrinking unit further shrink the angle of the accumulated value in accordance with a specified proportion so as to generate a correct frequency shift estimation value.
Patent TW-200303862-A (TW)
Title: A process for preparing 2, 3-diaminopyridine derivatives and the crystals of the 2, 3-diaminopyridine dihydrochlorides
Inventor: HAJIMA MAKOTO
IPC: C07D213/74
Filed: 2003-02-14
Abstract: The present invention relates to a process for preparing a 2, 3-diarninopyridine compound, which comprises reacting a 2, 3-diaminopyridine of the formula or the acid adduct with a compound of the formula (I) in the presence of hydrogen and a catalyst to produce the 2, 3-diaminopyridine compound of the formula (II) (wherein, R1: an optionally substituted lower alkyl group; R2: an amino-protecting group; R3 and R4: each independently representing a lower alkyl group).
Patent TW-200303847-A (TW)
Title: Process for producing particles of a metal compound
Inventor: ONO KEIJI
IPC: C01F17/241
Filed: 2003-02-17
Abstract: The object of the present invention is to provide a process for producing particles of a metal compound having a spherical particle shape and an average particle diameter larger than 0.3 um without employing high-pressure conditions. This object is achieved by a process for producing particle of a metal compound comprising a step of adjusting Ph of an aqueous solution containing urea and at least one metal element to from 4 to 8, a step of heating the aqueous solution under normal pressure, a step of separating a solid from the solution, and a step of drying the solid.
Patent TW-200416923-A (TW)
Title: A testing method of ball grid array package
Inventor: TAO SU
IPC: H01L21/66
Filed: 2003-02-27
Abstract: A testing method of ball grid array (BGA) package is provided. First, providing the BGA semi-package without mounting solder balls as a device under test, include a function test and a burn-in test. After the burn-in test, the BGA semi-package mounts with solder balls. It facilitates the yield of production because the mounting ball processing is done after the burn-in test, so that the ability between coupling the BAG package and outer device is improved well.
Patent TW-200304511-A (TW)
Title: High shrink sewing machine thread
Inventor: OBORA KENJI
IPC: D02G3/46
Filed: 2003-03-13
Abstract: A sewing machine thread comprising a high shrink filament whose thermal shrinkage ratio at dry heat 100 DEG C is 5% or more and a pile filament having pile on a filament surface, in particular, a high shrink sewing machine thread exhibiting a maximum thermal shrink stress at dry heat 100-150 DEG C of 0.1 to 0.5 cN / dtex, which is useful as for example, a sewing machine thread for buttoning that requires a durability of strong seam firmness or a sewing machine thread for waterproof and wind breaking products.
Patent TW-200417629-A (TW)
Title: Plasma polishing method for titanium and titanium alloy products
Inventor: LAI TAI-HUANG
IPC: C23F3/02
Filed: 2003-03-13
Abstract: A plasma polishing method for titanium and titanium alloy products comprises: mounting a to-be-polished titanium or titanium alloy product in an electrolyte solution based on ammonium (NH4+) ions; and generating an air gap by using a d.c. voltage output to cause the electrolyte solution on the periphery of the to-be-polished article working as a positive electrode to undergo a instant vaporization due to a high electric potential difference. Such a continuous air gap will form a wrapping air film on the surface of the to-be-polished article, in which the vaporized particles in the air film form a discharge plasma due to dissociation by the high voltage, and the protruded portions on the surface of the to-be-polished article are flattened by the discharge plasma, thereby forming a mirror-like smooth surface and achieving the objective of polishing.
Patent TW-200307998-A (TW)
Title: Treatment device of substrate
Inventor: KONTANI TADASHI
IPC: C23C16/452
Filed: 2003-04-04
Abstract: Gas flow and velocity supplied to laminated substrates are intended to be uniformed so as to supply the uniform gas to the laminated substrates. A buffer chamber 17 having a plurality of chamber holes 3 with the same opening area is provided within a reaction tube 6, a gas nozzle 2 with a plurality of nozzle holes 4 is disposed in the buffer chamber 17, each opening area of the nozzle holes 4 is gradually enlarged from the upstream to the downstream of the gas flow, therefore, once the gas introduced into the buffer chamber 17, the difference of the gas velocities will be homogenized, and the uniform gas can thus be supplied to the wafer from the buffer chamber holes 3.
Patent TW-200424755-A (TW)
Title: Photomask structure and method of reducing lens aberration
Inventor: WU YUAN-SHUN
Filed: 2003-05-01
Abstract: A photomask structure for reducing lens aberration and method thereof. The photomask consists of a pervious substrate and a concealing layer, wherein the concealing layer including a plurality of dummy patterns and assist patterns disposed therein, and the assist patterns disposed without the dummy patterns. The method of reducing lens aberration includes providing a substrate covered by a photoresist layer, forming patterns on the photoresist layer by a photomask, and forming a plurality of dummy trenches on the substrate using a patterned photoresist as a mask by etching. According to the present invention, the uniformity of critical dimension between dummy patterns is improved.
Patent TW-200403701-A (TW)
Title: Picture display device with reduced deflection power
Inventor: SKORIC BORIS
IPC: H01J29/76
Filed: 2003-06-03
Abstract: A picture display device comprises a cathode ray tube (1) with an elongated display screen (8) and a deflection system (9) for deflecting electron beams. The display screen is substantially rectangular with a long and a short axis. The line scanning direction is parallel to the long axis of the display screen. The cathode ray tube comprises a neck portion and between the screen and the neck portion a cone portion (3, 3a). This cone portion has an aspect ratio (ratio of x and y dimension, x/y ratio), which is near the neck below unity and changes to above unity closer to the screen as a function of z.
Patent TW-200401359-A (TW)
Title: Partial-membrane carrier head
Inventor: RENTELN PETER
IPC: B24B37/30
Filed: 2003-06-11
Abstract: An invention is provided for a carrier head that includes a metal plate having an opening formed in a central location. The metal plate has a wafer side, which faces the backside of a wafer during a CMP operation, and a non-wafer side. Positioned above the nonwafer side of the metal plate, and located above the opening in the metal plate, is a bladder or membrane. To facilitate uniformity during polishing, an inflating pressure is applied to the bladder, or membrane, that is substantially equivalent to a polishing pressure utilized during the CMP operation. To facilitate transporting the wafer, a vacuum can be applied to the opening in the metal plate to adhere the wafer to the carrier head. Further, to release the wafer from the carrier head, the bladder, or membrane, can be inflated such that it protrudes through the opening in the metal plate.
Patent TW-200501546-A (TW)
Title: Complementary fan rotating speed control method and apparatus
Inventor: Liu nian-hua
IPC: H02P5/00
Filed: 2003-06-17
Abstract: The present invention relates to a complementary fan rotating speed control method and apparatus, which is used for monitoring the rotating speed of at least two fans simultaneously. A controller is applied to output a pulse width modulation (PWM) control power to operate a first fan and a second fan. Then, the rotating speed pulse signals of the first and second fans will be transmitted back to the controller. If the controller detects a reduction in the rotating speed of either the first fan or the second fan, the controller will increase the rotating speed of the other fan and transmit a warning signal to ensure the cooling effect and thus extend the service time of the apparatus.
Patent TW-200413462-A (TW)
Title: Vinyl chloride resin composition
Inventor: TSUDA KOICHI
IPC: C08L27/04
Filed: 2003-06-17
Abstract: This invention relates to a kind of vinyl chloride resin composition, which is formed by adding light calcium carbonate, hydrotalcite compound, zinc organic acid compound and β -dione metal salt in a vinyl chloride resin, in which the light calcium carbonate preferably has a specific surface area value greater than 5 m2/g. The invented vinyl chloride resin composition is not toxic, has excellent electrical insulation and thermal stability and can prevent coloration over time.
Patent TW-200501416-A (TW)
Title: Heterojunction bipolar transistors with extremely low offset voltage and high current gain
Inventor: TSAI JUNG-HUI
IPC: H01L29/737
Filed: 2003-06-25
Abstract: New heterojunction bipolar transistors (HBT's) with high current gain and extremely low offset voltage are disclosed. Owing to the insertion of spacer/δ-doped sheet/spacer at base-emitter (B-E) heterojunction in this invention, the potential spike at B-E junction can be eliminated and the confinement effect for holes are enhanced. The potential spike is not observed under large B-E bias, and the offset voltage is still relatively small with small increase. In particular, for the HBT's with large conduction band discontinuity, the method of the invention is more efficient for completely eliminating the potential spike. For the example of InP/GaInAs HBT, a maximum common-emitter current gain of 455 and above 320 at IB=5μA, and a low offset voltage less 60 mV are achieved.
Patent TW-200404932-A (TW)
Title: Sewing machine needle
Inventor: WILLEMS JOHANN
IPC: D05B85/00
Filed: 2003-07-22
Abstract: The present invention relates to a sewing machine needle (1), which has a needle handle (3) protruding from needle head (2). The circumference surface (4) at least provides a thread aperture (6) protruding from needle point (5) to needle head (2). The section at least has a first portion (13) having a substantial shape of basic semi-circle and the thread aperture (6) form thereon, and a second portion (14) is an enantiometric semi-circle adjacent to an underline (H) of the first portion (13) in opposite direction, further having a sectional minifying portion (c) perpendicular to the semi-circle underline (H). For further improving the sewing machine needle, the present invention provides the sectional minifying portion (c) consisting of the ellipse outer edge (15, 16, 17, 18) of the sectional second portion (14).
Patent TW-200415214-A (TW)
Title: Ink jet latex having reactive surfactant stabilization
Inventor: VINCENT KENT
IPC: C09D11/00
Filed: 2003-08-25
Abstract: Latex particles having a reactive surfactant covalently bonded to the latex particle surface are provided. The latex particles exhibit shear stability and accurate drop placement on printed media when used in ink jet inks and in high speed ink jet printers. A latex particle is also provided having a reactive surfactant covalently bonded to the surface of the latex particle, where the latex particle has a bulk density from 0.90 g/cm<SP>3</SP> to 1.10 g/cm<SP>3</SP> and a surface dielectric constant from 2.0 to 3.0. An ink-jet ink is provided that can comprise effective amounts of an ink vehicle, a colorant admixed in the ink vehicle, latex particles dispersed in the ink vehicle, and a reactive surfactant covalently bonded to the surface of the latex particles.
Patent TW-200408271-A (TW)
Title: Personal video message system
Inventor: MERRELL JOHN DOUGLAS
IPC: H04N7/14
Filed: 2003-09-12
Abstract: There is provided a video message system that includes a video display, a frame, and at least one video camera. The video display, which has a fixed position, plays back a video portion of a video message from a user. The frame frames the video display. The at least one video camera is disposed on the frame, and is oriented in the same direction as the video display, for capturing video data of the user for inclusion in the video portion of the video message.
Patent TW-200417124-A (TW)
Title: System for controlling the stand-by to active and active to stand-by transitions of a VCC regulator for a flash memory device
Inventor: SIVERO STEFANO
IPC: H02M7/00
Filed: 2003-09-12
Abstract: A voltage down-converter system, with a stand-by mode and an active mode, for a memory device with the following components. A charge node is configured to receive a charge. A first transistor has a first gate and the first transistor is configured to supply a load current to the memory device. A first switch is coupled to the charge node and the first gate, the first switch being configured to apply the charge in the charge node to the first gate during transition from stand-by to active modes. A second transistor is coupled to the first gate and configured to bias the first transistor to an inactive state during stand-by mode. A second switch is coupled to the first gate and the second transistor, the second switch being configured to apply a voltage difference at the second transistor to the first gate during the stand-by mode.
Patent TW-200415178-A (TW)
Title: Interlayer adhesion promoter for low k materials
Inventor: LU VICTOR
IPC: H01L21/314
Filed: 2003-09-19
Abstract: The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; (b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.
Patent TW-200409236-A (TW)
Title: Method of etching a silicon-containing dielectric material
Inventor: DU YAN
IPC: H01L21/3213
Filed: 2003-10-08
Abstract: Disclosed herein is a method of pattern etching a layer of a silicon-containing dielectric material. The method employs a plasma source gas including CF4 to CHF3 is within the range of about 2:3 to about 3:1; more typically, about 1:1 to about 2:1. Etching is performed at a process chamber pressure within the range of about 4 mTorr to about 60 mTorr. The method provides a selectivity for etching a silicon-containing dielectric layer relative to photoresist of 1.5:1 or better. The method also provides an etch profile sidewall angle ranging from 88 DEG to 92 DEG between said etched silicon-containing dielectric layer and an underlying horizontal layer in the semiconductor structure. The method provides a smooth sidewall when used in combination with certain photoresist which are sensitive to 193 nm radiation.
Patent TW-200513895-A (TW)
Title: Operating method of on-line real-time updating the database website
Inventor: DING LIEN-CHUN
Filed: 2003-10-15
Abstract: This invention relates to an operating method of on-line real-time updating the database website, which is applied in a database website. The method includes the steps of: (a) providing a database in the server terminal; (b) providing an editing webpage at the client end and connecting to the corresponding database through Internet, wherein the editing webpage can be shown via a typical browser; (c) providing a plurality of data modules in the webpage; (d) choosing the data module of the data to be updated to enter a correcting screen of the data module; and (e) choosing one operation from a group of operations for use as a operating button to decide the function of that data to be operated, and to be shown in the same interface.
Patent TW-200515371-A (TW)
Title: Method and system improving step adaptation of ADPCM voice coding
Inventor: LIN YEN-SHIH
IPC: G10L19/02
Filed: 2003-10-16
Abstract: The present invention relates to a method and system improving step adaptation of ADPCM voice coding, in which an audio signal is divided into multiple frames and each frame is pre-encoded to acquire the optimal step variation function and upper limit value of step. Then use the respective optimal step variation function and the upper limit value of step of each frame to proceed formal coding, and further improve the audio quality and prevent the occurrence of oversized error.
Patent TW-200520090-A (TW)
Title: Method for improving footing defect in the semiconductor manufacture
Inventor: WANG GANG-NING
Filed: 2003-12-05
Abstract: The invention is related to a method for improving footing defect in the semiconductor manufacture, comprising the steps of the following: Firstly a SiON layer is formed. Then the first photo-resist is formed on the SiON layer. Next, the first photo-resist ashing is carried out after the photo-resist is developed during the photo rework process. Then, the surface of the SiON layer is exactly cleaned by the EKC solvent. Next, the oxygen treatment is accomplished to the surface of the SiON layer. Finally, the second photo-resist is formed on the SiON layer.
Patent TW-200427229-A (TW)
Title: Synchronizing circuit and method
Inventor: MITSUMOTO KINYA
IPC: H03K5/13
Filed: 2004-01-07
Abstract: The present invention aims to provide a synchronizing circuit and method capable of acquiring a stable synchronizing signal up to high frequencies, by making response and stability compatible in a simple configuration. In addition to a first pulse to be synchronized with a reference pulse, a second pulse phase-progressed and a third pulse phase-delayed in relation to the first pulse are formed by a first variable delay circuit. The reference pulse is compared with the first pulse by a first phase comparison circuit. The reference pulse is compared with the second pulse and the third pulse by a second phase comparison circuit. A control voltage generating circuit generates a control voltage by giving the compared output of the second phase comparison circuit in priority to the comparing output of the first phase comparison circuit. When phases match, the control voltage is generated by the comparison output of the first phase comparison circuit, and the delay time of the first variable delay circuit is controlled.