baber/WOPTO huggingface dataset:
Patent TW-400578-B (TW)
Title: Method of etching aluminum-based layer
Inventor: SPULER BRUNO
IPC: H01L21/3213
Filed: 1998-11-16
Granted: 2000-08-01
Abstract: An Al-based metal layer is formed on the semiconductor body and then coated with a layer of photoresist. A resist pattern is then formed in the layer of photoresist by means of lithography. The resulting semiconductor substrate is placed in the reaction chamber of ICP(Inductively Coupled Plasma) equipment. A mixed gas containing HCI and BCI3 is introduced into the reaction chamber to etch the metal layer using the photoresist layer as a mask, thereby forming interconnect lines. The etching is effected by CI ions or CI active species disassociated from either HCI or BCI3. In this etch process, the CI ions or CI active species react with the photoresist to thereby form a sidewall protection film consisting of AI2O3 at sidewalls of the lines of interconnect.
Patent TW-428215-B (TW)
Title: A method for manufacturing selective hemispheric silicon grains
Inventor: HUANG GUO-TAI
IPC: H01L21/00
Filed: 1999-01-07
Granted: 2001-04-01
Abstract: A method for manufacturing selective hemispheric silicon grains, in which the die was loaded in the reaction chamber wherein Si2H2 was imported as precursor of the highly doped amorphous silicon layer deposited by chemical vapor deposition. A highly doped amorphous silicon layer will then be formed on the die at a temperature of about 550 DEG C to 610 DEG C with a depositing rate of about 500 Å/min to 4000 Å/min. After that, a selective hemispheric silicon grain layer will be formed on the highly doped amorphous silicon layer. Since the method described above for forming the great-thickness selective hemispheric silicon layer has a low thermal budget, the noncrystallization level of the formed highly doped amorphous silicon layer is very high. Therefore, the doping concentration of the highly doped amorphous silicon layer may be 2*10<SP>20</SP> atoms/cm<SP>3</SP> to 1*10<SP>21</SP> atoms/cm<SP>3</SP> without any crystallization formed.
Patent TW-430886-B (TW)
Title: Method for making semiconductor device with small-sized gate structure
Inventor: HUANG WEI-JE
IPC: H01L21/28
Filed: 1999-02-09
Granted: 2001-04-21
Abstract: A method for making a semiconductor device with a small-sized gate structure comprises two steps of spacer etching. The method comprises forming a gate oxide on the surface of a semiconductor substrate; forming a polysilicon layer on the gate oxide; forming a photoresist layer on the polysilicon layer; using the photoresist layer to define a location of the gate; anisotropically etching the photoresist layer, a portion of the polysilicon layer and the gate oxide; forming a first dielectric layer on the surface of the semiconductor substrate and the surface of the periphery of the polysilicon layer; forming a second dielectric layer on the first dielectric layer; anisotropically etching the second dielectric layer to form a first spacer on the sidewall of the gate; forming a third dielectric layer on the first spacer and the first dielectric layer; anisotropically etching the third dielectric layer to form a second spacer of the gate sidewall; and etching back to make the height of the first spacer and the second spacer lower than the height of the gate structure.
Patent TW-475039-B (TW)
Title: Construction for feeding a small amount of fluid
Inventor: YOKOI JUNICHI
IPC: F16C33/10
Filed: 1999-03-19
Granted: 2002-02-01
Abstract: The present invention provides a feeding structure of micro-fluid to supply lubricant to bush when setting bush in the bearing part of pulley and connecting to shaft. Axial oil opening was usually set up on the shaft and outlet for lubricant flowing in radial direction was set up on the corresponding position of bush; however, it was very difficult to make the diameter of the axial oil opening to small. Therefore, it was necessary to pre-fabricate the large diameter of the oil opening and to supply the lubricant under large pressure by a large oil supplier. The present invention is to open axial mainstream part (4) in shaft (3), to fabricate a large diameter of opening, and to insert stick-like bush into the opening. Form the small oil opening according to the difference of the opening area and the cross-section of the bush. Open orthogonal slit to the oil opening in the periphery of shaft (3) of branch part (5) form the mainstream part (4) to the radial outward direction and insert metal wire into the slit. Jam the remaining portion of the metal wire in the slit by plate bush. Form the oil opening according to the difference of the open area of the slit and the cross-section of the metal wire.
Patent TW-522361-B (TW)
Title: Method of driving liquid crystal panel, and liquid crystal display apparatus
Inventor: TANAKA SHIGEKI
IPC: G09G3/36
Filed: 1999-03-23
Granted: 2003-03-01
Abstract: An object of the invention is to enhance the display quality of a liquid crystal display apparatus of a line reversal driving method. The liquid crystal display apparatus drives an active-matrix liquid crystal panel by the use of the line reversal driving method. To do so, a common driver AC-drives one of a pair of electrode in each of all the pixels of the liquid crystal panel. An adding circuit obtains the sum of a plurality of gradation components for deciding the gradations of the pixels in one of the columns in the liquid crystal panel at intervals of the predetermined horizontal period. A voltage setting portion in a source driver corrects a reference voltage difference ΔVref on the basis of the sum at intervals of the horizontal period, divides the corrected reference voltage difference ΔVrefa, decides a plurality of gradation voltages, and selects voltages to be applied to a plurality of data lines in the liquid crystal panel from among the gradation voltages based on the plurality of gradation components. The selected plurality of voltages are applied to the plurality of data lines.
Patent TW-426852-B (TW)
Title: Method and apparatus for protection of substrate surface
Inventor: OGURE NAOAKI
IPC: H01L21/00
Filed: 1999-06-16
Granted: 2001-03-21
Abstract: A method and apparatus can provide surface protection of substrates such as semiconductor wafers while they are being transported from one unit process to another unit process. The method comprises coating at least a part of a surface of the substrate with a coagulated film such as an ice film.
Patent TW-453138-B (TW)
Title: Total recycle treatment of acidic copper etching waste liquid of printed circuit board
Inventor: CHEN GUO-JIN
IPC: H05K3/00
Filed: 1999-06-17
Granted: 2001-09-01
Abstract: This invention provides a total recycle treatment of acidic copper etching waste liquid of printed circuit board. The method consists of the following steps. (a) In an agitation tank, sodium hydroxide solution is added into the acidic copper etching waste liquid, or the acidic copper etching waste liquid is added into the sodium hydroxide solution to have neutralization reaction occur. Copper hydroxide/copper oxide are precipitated out by adjusting pH value of the reaction solution during the neutralization reaction. (b) The copper hydroxide/copper oxide suspension produced in step (a) is filtered and the cake is washed by water. (c) The residual filtered liquid and water wash liquid from step (b) are collected and acidified and placed into a electrolytic tank. The electrolyte solution temperature and voltage difference between the two electrodes are adjusted to proceed the electrolytic oxidation reaction where most of the sodium chloride in the electrolyte solution is converted into sodium chlorate. The electrolyte solution is removed and new copper etching liquid is prepared by the mixture solution of sodium chloride and sodium chlorate. (d) The copper hydroxide/copper oxide filtered cake produced in step (b) is directly recycled or used to prepare copper sulfate by adding into sulfuric acid solution or sintered at high temperature to form copper oxide.
Patent TW-531526-B (TW)
Title: Low-voltage excited white phosphor
Inventor: PARK HYUNG-KEUN
IPC: C09K11/08
Filed: 1999-09-28
Granted: 2003-05-11
Abstract: A low-voltage excited white phosphor is provided. The white phosphor includes a ZnS:Zn phosphor and a (ZnxCd1-x)S:Ag, Cl phosphor (x=0.5 to 0.7), and has good color purity, high brightness and excellent color maintaining property.
Patent TW-465102-B (TW)
Title: Semiconductor device
Inventor: YAMAGUCHI YASUO
IPC: H01L27/01
Filed: 1999-12-17
Granted: 2001-11-21
Abstract: A partial oxide film (31) with well regions formed therebeneath isolates transistor formation regions in an SOI layer (3) from each other. A p-type well region (11) is formed beneath part of the partial oxide film (31) which isolates NMOS transistors from each other, and an n-type well region (12) is formed beneath part of the partial oxide film (31) which isolates PMOS transistors from each other. The p-type well region (11) and the n-type well region (12) are formed in side-by-side relation beneath part of the partial oxide film (31) which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region (11) adjacent thereto. An interconnect layer formed on an interlayer insulation film (4) is electrically connected to the body region through a body contact provided in the interlayer insulation film (4). A semiconductor device having an SOI structure reduces a floating-substrate effect.
Patent TW-523679-B (TW)
Title: A system, method and article of manufacture for a simulation system for goal based education
Inventor: ZADIK BETH ELYSE
IPC: G09B7/04
Filed: 1999-12-22
Granted: 2003-03-11
Abstract: A system is disclosed that provides a goal based learning system utilizing a rule based expert training system to provide a cognitive educational experience. The system provides the user with a simulated environment that presents a business opportunity to understand and solve optimally. Mistakes are noted and remedial educational material presented dynamically to build the necessary skills that a user requires for success in the business endeavor. The system utilizes an artificial intelligence engine driving individualized and dynamic feedback with synchronized video and graphics used to simulate real-world environment and interactions. Multiple ""correct"" answers are integrated into the learning system to allow individualized learning experiences in which navigation through the system is at a pace controlled by the learner. A robust business model provides support for realistic activities and allows a user to experience real world consequences for their actions in a simulated environment and make decisions that entail realtime decision-making and synthesis of the educational material.
Patent TW-425355-B (TW)
Title: A method of manufacturing rim of bicycle with anti-sliding and mud draining and long life cycle effect
Inventor: CHEN LAI-JIAN
IPC: B21B41/00
Filed: 2000-01-07
Granted: 2001-03-11
Abstract: The present invention relates to a method of manufacturing rim of bicycle with anti-sliding and mud draining and long lifetime cycle effect, wherein when proceeding aluminum extrusion formation at the side wall cross-section of a slender straight aluminum strip is integrally extruded with waved shape stripes or zigzag stripes, and the slender straight aluminum strip formed, after completion by anodic treatment, is rolled as a rim so as to reduce the anodic treatment cost and improve surface hardness of the rim. Thus by use of the waved shape stripes or zigzag strips of rim of this invention the friction at wet, oily and muddy ground, the anti-sliding effect and the mud draining effect of rim is increased and which wear allowance is capably detected and taken as a basis for accordingly changing the used rim for safety kept and for the layer of surface hardness of rim by anodic treatment capably retained to have its friction coefficient improved and its life cycle extended therefore.
Patent TW-574189-B (TW)
Title: Process for the hemihydrogenation of dinitriles to aminonitriles
Inventor: DALLEMER FREDERIC
IPC: C07C253/30
Filed: 2000-03-29
Granted: 2004-02-01
Abstract: A process is provided for the hemihydrogenation of dinitriles to corresponding aminonitriles using hydrogen in the presence of a supported catalyst. The supported catalyst comprises ruthenium supported on a carbon black, called acetylene black, resulting from the pyrolysis of paraffin oils.
Patent TW-504557-B (TW)
Title: Luminaire
Inventor: KEUPER MATTHIJS HENDRIK
IPC: F21Y115/10
Filed: 2000-06-29
Granted: 2002-10-01
Abstract: The invention relates to a luminaire suitable for accommodating a light source which is situated substantially in a first plane, comprising an optical element which is situated substantially in a second plane. The optical element is provided with facets of mutually differing inclination angles at one or both sides. The facets are shaped as substantially parallel prisms. According to the invention, the consecutive facets form a surface which is alternately convex and concave in shape.
Patent TW-498207-B (TW)
Title: Data transfer control device and electronic apparatus
Inventor: ISHIDA TAKUYA
IPC: H04L13/08
Filed: 2000-07-14
Granted: 2002-08-11
Abstract: An objective of the present invention is to provide a data transfer device and electronic apparatus which make it possible to reduce processing overheads in the firmware and implement high-speed data transfer. In a data transfer control device in accordance with the IEEE 1394 standard, the header of a packet is written to a header area, the ORB (data for SBP-2) of the packet is written to an ORB area, and the stream (data for the application layer) of the packet is written to a stream area. The stream area is managed by hardware in accordance with full and empty signals. Instruction information is comprised within a transaction label t1 of a request packet, and the header, ORB, and stream of a response packet are written to areas indicated by the instruction information comprised within t1, when the response packet is received. The device is also provided with registers TSR and TER that contain addresses TS and TE for securing a transmission area in the stream area and registers RSR and RER that contain addresses RS and RE for securing a reception area therein.
Patent TW-593267-B (TW)
Title: Continuous process for producing bis(3-hydroxypropyl) terephthalate
Inventor: GIARDINO CARL J
IPC: C07C67/03
Filed: 2000-08-24
Granted: 2004-06-21
Abstract: A process for the continuous production of at least one of bis(3-hydroxypropyl) terephthalate and low molecular weight oligomers of 1,3-propanediol and terephthalic acid is disclosed. According to the process, preheated 1,3-propanediol (about 150 DEG C to about 200 DEG C) and preheated lower dialkyl esters of terephthalic acid (about 150 DEG C to about 220 DEG C) are combined in a mole ratio of about 1.2:1 to about 2.3:1 and fed to an ester exchange vessel where the mixture undergoes a continuous transesterification reaction. The liquid reaction mixture is continuously heated and mixed, at a temperature of about 215 DEG C to about 250 DEG C, and a pressure of about 800 mm Hg to about 1,000 mm Hg. Gaseous reaction products are continuously separated from the liquid reaction mixture, and a stream of liquid reaction products containing bis(3-hydroxypropyl) terephthalate and low molecular weight oligomers of 1,3-propanediol and terephthalic acid is continuously removed from a base portion of the ester exchange vessel.
Patent TW-531460-B (TW)
Title: Electrolytic machining method and apparatus
Inventor: MORI YUZO
IPC: C25F3/00
Filed: 2000-08-25
Granted: 2003-05-11
Abstract: An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultra pure water. A catalytic material promoting dissociation of the ultra pure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultra pure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultra pure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultra pure water, with no impurities left behind on the processed surface of the workpiece.
Patent TW-492187-B (TW)
Title: Trench-capacitor with capacitor-electrodes and its production method
Inventor: SCHREMS MARTIN DR
IPC: H01L27/108
Filed: 2000-09-13
Granted: 2002-06-21
Abstract: This invention includes a trench-capacitor (160), to be applied in a semiconductor memory-cell (100). The trench-capacitor (160) is formed in a substrate (101) and includes a trench (108) with an upper region (109) and an under region (110); an isolation-collar (168), which is formed in the upper region (1090 on a trench-wall of the trench (108); a buried well (170), through which at least one part of the under region (110) of the trench (108) extends; a conductive layer (310) as the outer electrode of the capacitor to cover the under region (110) of the trench (108) and to cover the isolation-collar (168); a dielectric-layer (164) to cover the conductive layer (310) and act as the capacitor-dielectric and a conductive trench-filling (161) filled in the trench (108) to act as the inner electrode of the capacitor.
Patent TW-466557-B (TW)
Title: Methods and apparatuses for trench depth detection and control
Inventor: MUNDT RANDALL S
IPC: H01L21/66
Filed: 2000-12-15
Granted: 2001-12-01
Abstract: An inventive method for optically detecting a trench depth in a wafer is disclosed. The method includes detecting a first maxima in the intensity of a multi-wavelength light source, a portion of the light being reflected from the top trench surface of a wafer. A second maxima is then detected in the intensity of the multi-wavelength light source, a portion of which being reflected from the bottom trench surface of a wafer. The method further includes determining a maxima peak difference between the first maxima and the second maxima, wherein the trench depth corresponds to the maxima peak separation. The invention provides a robust, cost effective method for trench depth detection.
Patent TW-522192-B (TW)
Title: Embroidery machine
Inventor: KWAK SU MOON
IPC: D05C9/06
Filed: 2000-10-04
Granted: 2003-03-01
Abstract: The present invention is designed to reduce the vibration and noise in an embroidery machine by simplifying the construction of the interlocking units which constitutes X-axis and Y-axis driver unit, and to improve the productivity by reducing the production cost. In addition, it is another object of the invention to simplify a power transmission procedure and to reduce operating errors, so as to control the embroidery machine more precisely and improve the quality of the embroidery products. The embroidery machine of the invention comprises a table; an embroidery frame placed on the table; a head located above the embroidery frame, the head having a plurality of needles; a hook installed below the table, the hook being apposite to the head; an X-axis driver unit for providing power to move the embroidery frame forward and backward in X direction; an Y-axis driver unit for providing power to move the embroidery frame forward and backward in Y direction; and a control unit for being connected to the X-axis and Y-axis driver units.
Patent TW-505845-B (TW)
Title: Device and method for controlling the operating state of an electronic system in a ""grey zone""
Inventor: DIVOUX JEAN-NOEL
IPC: G05F1/10
Filed: 2000-11-16
Granted: 2002-10-11
Abstract: The present invention concerns a device and a method for controlling the operating state of a low power electronic system powered by an electric power source (5) and including in particular a microprocessor (10) able to operate at a guaranteed minimum operating level (VDDmin). A reset signal (CPU RST) keeps the microprocessor in a reset state is supplied as long as the supply voltage (VDD) supplied by the power source is lower than the guaranteed minimum operating level. According to the present invention, the reset state of the microprocessor is kept as long as the supply voltage is lower than a power-on-reset threshold (VPOR) which is, or may be lower than the guaranteed minimum operating level, and this reset state is extended beyond the power-on-reset threshold as long as the supply voltage has not at least reached the guaranteed minimum operating level. Consequently, the lifetime of the power source is increased and the microprocessor is prevented from executing erroneous instructions when the latter is in the ""grey zone"" defined by the range of voltages between the power-on-reset threshold and the guaranteed minimum operating level.
Patent TW-466198-B (TW)
Title: Apparatus and methods for applying flexible straps around bundles of objects
Inventor: HELLAND GARY
IPC: B65B13/22
Filed: 2000-11-28
Granted: 2001-12-01
Abstract: Apparatus and methods for applying flexible straps around objects include a feed and tension unit a feed drive wheel and a feed pinch wheel, a primary tension drive wheel and a primary tension pinch wheel, and a secondary tension drive wheel and a secondary tension pinch wheel, wherein at least one of the pinch wheels is controllably biased against the respective drive wheel by a solenoid that is controlled in two stages: a first stage that provides a full feed or tensioning force and a second stage that provides a reduced feed or tensioning force by altering the pulse width modulation of the solenoid. In another embodiment, the three sets of wheels of the feed and tension unit are configured to provide a simplified ""V-shaped"" strap path that reduces bending of the strap, thereby reducing friction and consequent feeding difficulties. In another embodiment, the feed and tension unit includes inner and outer guides that form a strap channel through the feed and tension unit to provide easy access to the strap path for clearing the strap path in the event of a jam. In another embodiment, a track assembly includes a plurality of sections providing modularity of construction. Each section includes a backplate attached to at least one support member, and a slotted cover pivotably attached to the at least one support member proximate the backplate and moveable between an open position spaced apart from the backplate and a closed position proximate the backplate. In another embodiment, a cutting assembly for severing strap material includes a press platen and a cutter having a first cutting blade along a first edge thereof and a second cutting blade along a second edge thereof, the cutter being removably and variably engaged to the press platen.
Patent TW-461019-B (TW)
Title: Manufacturing method of cylinder capacitor with reversed electrode structure
Inventor: LEE TZUNG-HAN
IPC: H01L27/108
Filed: 2000-12-12
Granted: 2001-10-21
Abstract: There is provided a manufacturing method of cylinder capacitor with reversed electrode structure. In the method, a via is etched on a substrate formed thereon a dielectric layer and node contact to form an opening for exposing the node contact. The openings on two adjacent node contacts are communicated with each other thereby forming a neck structure. Then, a conductor spacer is formed on the side walls of the opening. The conductor side walls are connected on the neck structure, so as to form the upper electrode of the capacitor. Next, a dielectric layer is formed on the upper electrode layer, and a conductor layer is formed on the dielectric layer. At this moment, part of the conductor layer and dielectric layer must be removed to expose the node contact. Then, a conductor layer is deposited to fill up the node contact hole, so that the formed conductor layer is used as a bottom electrode. Finally, a planarization process is performed to complete the cylinder capacitor with reversed electrode structure.