baber/WOPTO huggingface dataset:
Patent JP-S5513955-A (JP)
Title: Method for forming thin insulation film
Inventor: FUJI TATSUO
IPC: H01S5/00
Filed: 1978-07-17
Abstract: PURPOSE: To obtain a very fine protective film that has acid proof and alkaline proof characteristics as well as low boundary level density, by covering a thin metal film on a compound semiconductor substrate before oxidizing the film, and by producing a thin oxide film, consisting of elements that exist in the substrate, at the interface between the metal film and the substrate.  
     CONSTITUTION: A thin Hf film 2 is covered on a GaAs single crystal substrate 1 by means of the vacuum vapour coating. In this process, not only Hf but Ta, W, Nb, or Mo may be used. In short, any element, that is solid at the oxidation temperature, does not form alloys with Ga and As, whose vapour pressure is low enough, and whose coefficient of diffusion into the substrate is nil, can be allowed to use. Then the substrate is treated with high temperature in an O 2  atmosphere or with the anode oxidation in an ethylene glycol solution to form a thin HfO 2  film 3. This HfO 2 -GaAs structure is further treated with high temperature in an oxidizing atmosphere for producing a mixed thin film 4 of βGa 2 O 3 -As 2 O 3  between the substrate 1 and the film 3; thus preventing As 2 O 3 , whose vapour pressure is high, from passing through the film 3. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-H0649660-A (JP)
Title: Coating composition having catalytic activity
Inventor: MANFUREETO BUAIGANTO
IPC: B01J37/02
Filed: 1993-04-14
Abstract: PURPOSE: To develop a catalyst activity coating compsn. having excellent characteristics by pulverizing a mixture composed of enamel frit and specific inert material in a moist state, then adding a specific oxidation catalyst thereto and mixing the mixture.  
     CONSTITUTION: The enamel frit obtd. by heating and melting an enamel raw material, then rapidly cooling the material is previously pulverized to a size of 1 to 300 μm and the heat resistant inert material, such as rock crystal, feldspar or alumina, is mixed therewith at a ratio of 20 to 80 wt.%. This mixture is pulverized in a moist state. The oxidation catalyst consisting of microplanar substrates, such as mica, talc or kaolin, coated with phylosilicate or other metal oxides on the surface of the fine powder is added at a ratio of 1 to 50 wt.% of the enamel to this powder and the both are mixed. The metallic substrate is coated with the resulted catalyst activity coating compsn. in the form of an aq. suspension by two layer/2 firing or two-layer/single firing, by which the metallic substrate is subjected self-cleaning coating. 
     COPYRIGHT: (C)1994,JPO
Patent JP-S63268716-A (JP)
Inventor: HANSUUPEETAA ZEERUMANNETSUGEBE
IPC: A01C1/06
Filed: 1988-04-11
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S61247175-A (JP)
Title: Solid-state image pickup device
Inventor: SAITO MITSUO
IPC: H04N5/335
Filed: 1985-04-25
Abstract: PURPOSE:To attain high resolution by providing a spectral means for forming an optical image of an object onto two solid-state image pickup devices respectively and shifting the relative position of the element chips of the two solid- state image pickup devices mutually. CONSTITUTION:Incident light from a lens 1 is made incident from the aperture for the incident light formed in the shape of box on the box and the incident light transmitted through or reflected in a half mirror 2 is formed on the solid- state image pickup devices 3, 4 fitted to the box. Further, the relative position of the two solid-state image pickup elements 3, 4 is shifted mutually so that the own picture element is placed on the gap between the other solid-state image pickup device element chips 41 and 31. That is, the two element chips 31, 41 are shifted as shown in solid lines and dotted lines as a whole.
Patent JP-S62243421-A (JP)
Title: Detector
Inventor: MATSUMOTO AKIO
IPC: H03K17/968
Filed: 1986-04-15
Abstract: PURPOSE:To attain easy and sure fault check by bringing a detection circuit section into the state equivalent to the state that an object to be sensed comes in response to the check mode designation. CONSTITUTION:When a switch 32 of the mode designation section 30 is turned on or an L signal is impressed from an external terminal 31, the check mode designation is attained, a transistor (TR) Q41 is turned on and a node (a) goes to H. Then a TR Q42 is turned on, a TR Q42 is turned off to disconnect a parallel resistor R47, the adjusting resistor is increased, aud so long as no fault is caused, and the oscillation is stopped. A signal in response to the presence of the oscillation stop is outputted to a fault check output circuit 20 via a comparator 21, an integration circuit 22, a waveform shaping circuit 23 and a TR Q21 to check the presence of a fault of a detector for the proximity switch easily and surely.
Patent JP-S5422977-A (JP)
Title: Socket for u-shaped fluorescent lamp
Inventor: WADA MASAYA
IPC: H01R33/08
Filed: 1977-07-20
Abstract: PURPOSE: To cantilever a U-shaped fluorescent lamp at its single base fitted with both the ends of a U-shaped tube, by using a socket. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H07155448-A (JP)
Title: Pachinko (japanese pinball) game machine
Inventor: FUKUSHIMA SEIICHIRO
IPC: A63F7/02
Filed: 1994-04-02
Abstract: PURPOSE:To facilitate assembling work by enabling mounting and demounting of a game plate even if a front frame is closed as it is, and relieving restriction on a design of a mechanism plate. CONSTITUTION:A pachinko machine P has a sash bar frame 7 which is arranged in a picture frame shape on the reverse of a front frame and in which a plate fastening part 10 is protrusively arranged on the rear side, a game plate 11 formed in a shape capable of being fitted to and installed on the sash bar frame 7 from the obverse side of the pachinko machine P and engaging protrusive pieces 19 which are protrusively arranged on the sash bar frame 7 or the game plate 11 and connects both intergally to each other by engaging with a nonprotrusively arranged side member, and the engaging protrusive pieces 19 are arranged in positions capable of releasing operation from the obverse side of the pachinko machine P. The engaging protrusive pieces 19 to fix the game plate are arranged in a decorative part 13 to decorate the periphery of a game part of the game plate 11, and the sash bar frame 7 is possessed by a mechanism plate and the related part.
Patent JP-S5211704-A (JP)
Title: Tuning indicator
Inventor: SAWAIRI KIYOSHI
IPC: H03J3/14
Filed: 1975-07-16
Abstract: PURPOSE: To obtain a tuning indicator which has a simple construction with the use of FETs and high performance to be used in FM radio receivers. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-S58207368-A (JP)
Title: Diffusion joining method of metal
Inventor: KATOU MITSUO
IPC: B23K20/00
Filed: 1982-05-26
Abstract: PURPOSE:To obtain a diffusion joined part having high quality with good workability under low joining pressure and with less formation of voids, compds., etc., by heating the B penetrated layer formed on the joint surfaces of members to be joined to melt thereby jonining the same. CONSTITUTION:A coating layer of a B penetrated layer of preferably about 15- 70mum, more preferably 25-55mum is formed by a boronizing treatment or the like on the joint surfaces of members to be joined, whereafter both members to be joined are heated and held to and at the m.p. of the B coating layer or above and the solidus line temp. thereof or below. The impurity gas contained in the B coating layer is thus removed, and the m.p. in the B coating layer is made uniform. Both members to be joined are then joined with the molten B coating layer as a joint surface. The above-mentioned diffusion joining method is suited for joining of Fe-, Ni-, and Co-base heat-resistant alloys and is most effective particularly for Ni-based heat-resistant alloys.
Patent JP-H04298090-A (JP)
Title: Doped semiconductor superlattice structure
Inventor: MIYAZAWA SEIICHI
IPC: H01S5/042
Filed: 1991-03-26
Abstract: PURPOSE:To increase the activation ratio of impurities in AlGaAs, especially the activation ratio of Si to be an n-type dopant. CONSTITUTION:A semiconductor crystal that has a periodical structure formed with AlGaAs 18, 19 with thickness of layer less than 300 angstrom. The composition of Al is of AlGaAs 18, 19 that are laminated each other different. For the composition of Al in each layer, it is favorable to select a value that is positioned between the composition value of Al whose impurity activation ratio is unfavorable. As the result, even the composition whose activation ratio would be unfavorable in view of the average content of Al, the activation ratio will be better, with high-density doping realized.
Patent JP-S60232520-A (JP)
Title: One-side variable power optical system
Inventor: ANDOU TOSHINORI
IPC: G02B13/12
Filed: 1984-05-02
Abstract: PURPOSE:To hold variable power constant to any light beam by making the front group of a one-side variable power toric. CONSTITUTION:A meniscus toric lens 12 which has curvature in a plane (i.e. x-y plane) formed of an optical axis (x) and an axis (y) in a specific variable power direction is used as a lens element in a one-side various power lens group 12 on a light source side. Curvatures R1 and R2 of the front and rear surfaces of the meniscus toric lens 12c are normally R1approx.=R2. The angle theta deg. of incidence in the x-y plane at the intersection of a principal light beam and the toric lens 12c and the cylindrical lens gap e' at the intersection are expressed by a function of radii R1 and R2 of curvature of the toric lens 12c in the x-y plane. When the toric lens meets requirements such as the angle theta of incidence determined unequivocally by the lens gap, substantial lens gap e/costheta, etc., a degree of freedom within a proper range is obtained and the condition of R where variation in power M is small is found.
Patent JP-S62245658-A (JP)
Title: Semiconductor integrated circuit device
Inventor: KOMORI KAZUHIRO
IPC: H01L27/10
Filed: 1986-04-18
Abstract: PURPOSE:To obtain high threshold voltage even when the dosage of channel doping is low by a method wherein the threshold voltage of an MISFET is controlled by the selection of conductivity type of the semiconductor layer, which constitutes a gate electrode, and the doping of a channel. CONSTITUTION:The word wire WL1 provided on a gate insulating film 3 consists of a p-type semiconductor layer 4 and the high melting point metal silicide provided on the layer 4. On the other hand, n<+> type semiconductor regions 8 and 9 are provided in a semiconductor substrate 1. MISFET Q1 and Q2 are formed using the word wire WL1, the regions 8 and 9 as a gate electrode, a source electrode and a drain region. In this, case, as the word wire WL1 is constituted using the layer 4, the difference in the work function between the gate electrode and the substrate 1 can be made larger when compared with the case wherein an n-type semiconductor layer is used instead of the layer 4. Accordingly, the dosage of the channel doping can be reduced in the amount of increase in the above-mentioned difference. As a result, the deterioration in characteristics of the FET Q1 and Q2 can be prevented effectively.
Patent JP-H01260397-A (JP)
Title: Heat protecting device
Inventor: HIRAYAMA HIROSHI
IPC: G21C11/08
Filed: 1988-04-12
Abstract: PURPOSE:To protect member to be protected from the heat of sodium by sheathing a projecting end part of fixed fittings projecting toward the liquid contact surface side of a heat shielding plate with a sheathing member and setting the projecting end part so as not to directly bring it into contact with liquid sodium. CONSTITUTION:A heat shielding plate 13 is fixed on the liquid contact face 11a of a member 11 to be protected of a structure and the like by stud bolts 14 of a plurality of fixing fittings at fixed intervals 12 and the member 11 is sheathed. The periphery of the head part 14a of a stud bolt 14 projected in the side of flowing sodium 17 from the liquid contact face of the heat shielding plate 13 is coaxially sheathed with noncontact by a cap 18 which is a sheathing member. Thus heat follow-up of the stud bolt 14 for the flowing sodium 17 can be reduced, as the result heat stress of the member 11 can be lowered and the improvement of the heat protection effect in which the member 11 is protected from the heat of the flowing sodium 17 can be planned.
Patent JP-H07289988-A (JP)
Title: Method for coating and article coated thereby
Inventor: YAMAGUCHI KOICHI
IPC: B05D7/24
Filed: 1994-04-26
Abstract: PURPOSE:To improve the safety and durability by using respectively a coating wherein an aqueous acrylate resin emulsion is an essential ingredient as an undercoating material and a coating wherein an aqueous fluoro-olefin-based resin emulsion is an essential ingredient as a topcoating material. CONSTITUTION:When coating is performed on a substrate, firstly, an under coating material is applied and then, a top coating material is applied thereon. In this case, a coating wherein an aqueous acrylic resin emulsion is an essential ingredient is used as an undercoating material. Then, a coating wherein an aqueous fluoro-olefin-based resin emulsion is an essential ingredient is used as a topcoating material. In addition, in an article wherein after an undercoating material is applied at first, a topcoating material is then applied, as the undercoating material and the topcoating material, the same coatings as the above-mentioned coating are respectively used. In addition, as the topcoating material, an aqueous resin emulsion prepd. by copolymerizing copolymerizable monomers consisting of fluoro-olefin, a carboxylic acid vinyl ester monomer and ethylene is incorporated as the essential ingredient.
Patent JP-H04319674-A (JP)
Title: Method for locating earth fault point
Inventor: YAMAMOTO YASUHIRO
IPC: G01R31/08
Filed: 1991-04-19
Abstract: PURPOSE:To perform work searching a fault point by reduced labor by specifying the fault point by judging which of branches the fault point on and after a branch point is present in by the use of the data of a power supply terminal and two power receiving terminals. CONSTITUTION:The distance from the power terminal A of a resistance- grounded type three-terminal single circuit transmission line to a fault point is calculated and, when the calculated distance exceeds the distance from the power supply terminal A to a rotary branch point T, the voltages VB, VC and currents IB, IC of a fault phase of other terminals B, C are measured. The positive phase impedance ZB of the circuit in the section TB between the branch point T and a terminal B and the positive phase impedance ZC in the section TC between the branch point T and a terminal C are used to respectively calculate the values of formulae VTB=VB-ZBIB and VTC=VC-ZCIC. When the value VTB is smaller than the value VTC, the fault point is judged to be present in the section TB and, when the value VTC is smaller than the value VTB, the fault point is judged to be present in the section TC.
Patent JP-H04321777-A (JP)
Title: Electromagnetic pump
Inventor: KASADA TOSHIO
IPC: F04B9/00
Filed: 1991-04-19
Abstract: PURPOSE:To simplify countermeasures for safety when an excess electric current flows in an electromagnetic pump by using a fuse resistance instead of a solid resistance for discharge amount adjusting. CONSTITUTION:Such constitution is provided as that in an electromagnetic pump 10, one end 1a of a coil 1 is connected to a terminal a and the other end 1b is connected to a connection plate 3 on one end of a fuse resistance 2 which is connected to the coil 1 in series and a terminal b is provided on the other connection plate 4. Therefore, the variance of each discharge amount is absorbed as usual and the discharge amount can be maintained constant by the selection of a resistance value of the fuse resistance. On the other hand, when an excess electric current flows by the rare short-circuit of the coil 1, etc., the fuse resistance 2 is cut before the coil 1 is burnt so that the electromagnetic pump 10 can be stopped safely.
Patent JP-H10281749-A (JP)
Title: Position detector
Inventor: KUWABARA SEIJI
IPC: G01B21/00
Filed: 1997-04-07
Abstract: PROBLEM TO BE SOLVED: To detect a position and to judge the analog level of stroke pressure being applied from a position indicating means to a detector by inserting a piezoelectric material, as a power generating unit, between conductive electrodes having a finite resistivity and connecting each electrode electrically with the power generating unit. SOLUTION: A piezoelectric material is inserted, as a power generating unit 1, between a pair of conductive electrodes 2 having a finite resistivity and each electrode is connected electrically with the power generating unit 1. In response to an action being applied from a position indicating means to a position detector when a position is designated by the position indicating means, the power generating unit 1 generates a voltage. Consequently, a current flows into a measuring system arrange appropriately through the conductive electrodes 2 having a finite resistivity. The current is measured depending on the circuitry required for positional detection and operated according to Ohm's law, or the like, thus determining a position in a coordinate system.
Patent JP-H1175109-A (JP)
Title: Solid state image pickup device
Inventor: YAMAMOTO YASUTOSHI
IPC: G03B7/08
Filed: 1998-04-01
Abstract: PROBLEM TO BE SOLVED: To provide a solid state image pickup device which can suppress the flicker at both high and low luminance parts by detecting and suppressing the flicker components for each of signals of different exposure value and then performing a synthesizing process. SOLUTION: A short time exposure signal Sshort outputted from a solid state image pickup device 1 is inputted to a 2nd flicker detection means 4. When the means 4 detects the flicker, a 2nd flicker suppression means 5 inputs the gain A outputted from the means 4 to an amplifier circuit 9 to correct the gain A for the signal Sshort and outputs a signal Sshort' having suppressed flicker. An image synthesizing means 6 inputs a long time exposure signal Slong having suppressed flicker and inputs the signal Sshort' to an adder circuit 10 to add both signals together and outputs a synthetic image signal Smix. Thus, the flicker can be suppressed at both high and low luminance parts while a dynamic range is extended.
Patent JP-H06298518-A (JP)
Title: Production of silica carrier excellent in dispersibility
Inventor: SAKATA KANJI
IPC: C01B33/12
Filed: 1993-04-15
Abstract: PURPOSE:To obtain a silica carrier carrying a substance to be supported in a highly dispersed state at a molecular level by utilizing the formed molecular tissue and ion-exchanging ability of an amphipathic substance. CONSTITUTION:A mixed dispersion containing a silica-forming substance and an amphipathic substance having a polar group and a hydrophobic group added to both the ends of the molecule is subjected to evaporative removal of a solvent, and the produced silica complex product is brought into contact with a solution containing an ionic substance to be supported or a precursor of a substance to be supported to carry the substance to be supported or its precursor on the silica complex. Or, the silica complex may be brought into contact with a solution containing the ionic substance to be or supported or its precursor and subsequently chemically or thermally treated in the coexistence of the amphipathic substance. The amphipathic substance is preferably a substance capable of forming a two molecular film. Since stably carrying the substance to be supported in ahighly dispersed state, the silica carrier is used in wide fiesds such as a high performance catalyst carrier, a fine particle-dispersing medium, a dispersing and immobilizing carrier, etc.
Patent JP-S62244663-A (JP)
Title: Preparation of thermal head
Inventor: SHIRAKAWA KYOJI
IPC: B41J2/345
Filed: 1986-04-17
Abstract: PURPOSE:To obtain a thermal head improved in the pressure contact with a thermal recording medium and reduced in power loss, by a method wherein the exposed part of a heat generating resistor layer is brought to a high resistance part and the width of the dividing part of a current supply body layer is widened by again employing a photolithographic technique and a protective layer is formed on the heat generating resistor layer and the current supply body layer. CONSTITUTION:A partial glaze layer 12 is provided on an insulating substrate 11, and a heat generating resistor layer 13 and a current supply body layer 14 are successively laminated thereto and the current supply body layer 14 is divided by a photolithographic technique so that the initial exposed part 13a of the heat generating resistor layer 13 is positioned on the almost top surface part of the partial glaze layer 12. The exposed part 13a of the heat generating resistor layer is baked oxidized so that the resistance value thereof becomes high and the width of the divided part 14a of the current supply body layer 14 is widened by the photolithographic technique while a high resistance layer 13a is formed to the central part of the heat generating resistor layer 13 and a low resistance layer 13b is formed to the current supply body layer 14. An oxidation resistant layer 15 and an abrasion resistant layer 16 are formed thereon by sputtering as a protective layer 17 to form a thermal head.
Patent JP-H09277006-A (JP)
Title: Method for continuously casting molten metal
Inventor: TANI MASAHIRO
IPC: B22D11/16
Filed: 1996-04-10
Abstract: PROBLEM TO BE SOLVED: To produce a continuously cast slab having only a little internal defect and surface defect by using an electromagnetic brake device and controlling valocity distribution of molten metal flow in an immersion nozzle. SOLUTION: The difference Δh of the molten metal heights is detected with thermocouples 11a, 11b embedded in the mold walls 4a, 4b. The detected signals are inputted to an input device 13 and treated with an arithmetic device 14 and the electromagnetic brake 5a is shifted in the vertical direction to the pouring direction of the molten metal through a control device 15. In the electromagnetic brake 5a, the molten metal flowing velocities 6a, 6b in the immersion nozzle are adjusted with an electromagnet generated by an impressed current and the spouting flows 7a, 7b of the immersion nozzle are uniformized to execute the restraint of drift flow in the mold. By this method, the drift flow of the molten metal in the mold can be prevented.
Patent JP-H08262025-A (JP)
Title: Evaluation method of stress state in living body
Inventor: KISHIMOTO JIRO
IPC: G01N33/573
Filed: 1995-03-23
Abstract: PURPOSE: To obtain an evaluation method in which the stress state of an animal can be evaluated simply and objectively by a method wherein the activity of nitrogen monooxide synthetase(NOS) in an adrenal gland is measured and a measured value is used as an index. CONSTITUTION: The activity of NOS in the adrenal medullary substance of a mammal, especially a rat, is measured. In this case, L-arginine is used as a substrate, and the activity of an enzyme which generates nitrogen monooxide stoichiometric (NO) and citrulline is utilized. For example, tritium-labeled L- arginine ([<3> H]-Arg) is used, its conversion into tritium-labeled citrulline is monitored, and the activity of the NOS is measured. This activity value displays a good correlational property with a stress applied to an animal. Consequently, whether the animal to be inspected is in a stress state or not and to which extent the stress state is can be recognized by an evaluation which uses the activity value as an index.  That is to say, how an external stimulus, e.g. surroundings in which the animal is placed, a treatment such as a medication or the like, gives the animal can be evaluated simply and objectively.