baber/WOPTO huggingface dataset:
Patent TW-469651-B (TW)
Title: Field-effect transistor and method of fabricating the same
Inventor: ONO MIZUKI
IPC: H01L29/78
Filed: 2000-09-28
Granted: 2001-12-21
Abstract: A field-effect transistor comprises a semiconductor substrate, a gate insulation film formed selectively on the semiconductor substrate, a gate electrode formed on the gate insulation film, source/drain regions formed in surface portions of the semiconductor substrate along mutually opposed side surfaces of the gate electrode, the source/drain regions having opposed end portions located immediately below the gate electrode, each of the opposed end portions having an overlapping region which overlaps the gate electrode, and a channel region formed in a surface portion of the semiconductor substrate, which is sandwiched between the opposed source/drain regions. That portion of the gate insulation film, which is located at the overlapping region where at least one of the source/drain regions overlaps the gate electrode, has a lower dielectric constant than that portion of the gate insulation film, which is located on the channel region. Thereby, a short channel effect can be fully suppressed, and a high-speed operation can be realized.
Patent TW-475234-B (TW)
Title: Mechanism for preventing falling of substrate and substrate inspection device equipped therewith
Inventor: KOMATSU MANABU
IPC: B25J15/06
Filed: 2000-10-05
Granted: 2002-02-01
Abstract: There is a mechanism for preventing falling of substrate which can prevent a substrate from falling off even when the substrate is defectively vacuum-chucked and a substrate inspection device provided with the mechanism. A locking member-moving means 25 which retracts a locking member 24 from the front side of the surface of a substrate W horizontally arranged with its rear surface R faced downward and, in addition, sets up the member 24 facing to the surface and peripheral edge of the substrate when the substrate is inclined from the horizontal state. Accordingly, the locking member retracts and does not obstruct visual inspections in the horizontal state and, in addition, can prevent a falling and slipping down of the substrate even when the substrate comes off due to defective chuck by vacuum even when the substrate is inclined, because the locking member is faced to the surface and peripheral edge of the substrate.
Patent TW-465128-B (TW)
Title: Gallium nitride group compound semiconductor light-emitting device
Inventor: HATA TOSHIO
IPC: H01L33/08
Filed: 2000-10-06
Granted: 2001-11-21
Abstract: A semiconductor light-emitting device includes: a substrate, a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.
Patent TW-499786-B (TW)
Title: A semiconductor laser device and a method for fabricating the same
Inventor: TSUNODA ATSUO
IPC: H01S5/223
Filed: 2000-10-19
Granted: 2002-08-21
Abstract: An object of the present invention is provide an InGaAlp-based semiconductor layer of a good crystal quality at a higher temperature up to a re-evaporating temperature of In by MBE process. A buffer layer made of GaAs and a buffer layer made of GaInP are formed by MBE (molecular beam epitaxy) process on a GaAs substrate having a facet, which is to be a main facet, inclined by θ DEG in [011] direction from (100) facet. Then semiconductor layers are formed by MBE process so as to include cladding layers having a bandgap Egc and an AlGaInP active layer having a bandgap Ega which is adjusted by an amount of III-group element to be represented by Ega < Egc. The semiconductor laser device has a ridge stripe extending in [01-1] direction.
Patent TW-484169-B (TW)
Title: Method and apparatus for supercritical processing of a workpiece
Inventor: BIBERGER MAXIMILLIAN A
IPC: H01L21/677
Filed: 2000-11-02
Granted: 2002-04-21
Abstract: An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical processing module and the non-supercritical processing module are coupled to the transfer module. The robot is preferably located within the transfer module. In operation, the robot transfers a workpiece from the entrance of the transfer module to the supercritical processing module. After supercritical processing, the robot then transfers workpiece from the supercritical processing module to the non-supercritical processing module. After the non-supercritical processing, the robot returns the workpiece to the entrance of the transfer module. Alternatively, the non-supercritical processing is performed before the supercritical processing.
Patent TW-554100-B (TW)
Title: High speed spinning of sheath/core bicomponent fibers
Inventor: KARAGEORGIOU THEODORE G
IPC: D01F8/10
Filed: 2001-02-02
Granted: 2003-09-21
Abstract: Processes whereby sheath/core bicomponent fibers are melt-spun at relatively high spinning rates. In particularly preferred forms, polyamide sheath/core bicomponent fibers are made at melt-spinning speeds of about 4000 meters per minute or greater, and more preferably about 4500 meters per minute or greater. Most preferably, the sheath is formed of nylon 6,12 while the core is formed of nylon 6. A process for making a bicomponent fibers comprising melt-spinning first and second polymer streams at a melt-spinning speed of about 4000 meters per minutes or greater to from a bicomponent fiber having first and second fiber domains corresponding to said first and second polymer streams, respectively, and having a modification ratio of at least about 2.0.
Patent TW-494645-B (TW)
Title: Variable-length decoding
Inventor: PENAIN STEPHANE
IPC: H04N7/26
Filed: 2001-02-14
Granted: 2002-07-11
Abstract: Data which has been variable-length encoded in accordance with a Huffman tree (HT), is decoded in the following manner. A memory (MEM) is used in which the Huffman tree has been stored so that branches of the Huffman tree are represented by memory locations (ML). If a memory location represents a branch that is followed by subsequent branches, the memory location contains a pointer (P) to memory locations representing these subsequent branches. If the memory location represents a branch that is not followed by subsequent branches, the memory location contains an end-of-code indication (ECI) and output-symbol data (OSD). A decoding processor (DPR) carries out a selection step (SEL) and an evaluation step (EVA) with each data element (DE) in a sequence of data elements. In the selection step, the decoding processor selects a memory location on the basis of the data element and the content of the most recently selected memory location. In the evaluation step, the decoding processor checks if the memory location that has been selected contains the end-of-code indication. If so, the decoing processor provides an output symbol (OS) on the basis of the output-symbol data. This manner of variable-length decoding allows cost-efficient implementations, in particular when various types of variable-length codes need to be decoded. It is particularly suitable for use in an MPEG decoder.
Patent TW-494384-B (TW)
Title: Flat panel display
Inventor: KIM HAENG-SEON
IPC: G02F1/133
Filed: 2001-03-08
Granted: 2002-07-11
Abstract: A flat panel display comprises a system and a display module. The system comprises an image processing part for deciding a timing format of an image data and generating a control signal for the image data, an encoder for encoding the data and the control signal output from the image processing part in an RSDS specification, and a power output part for outputting a constant-voltage. The display module includes a column driver integrated circuit and a scan driver integrated circuit, and the decoding of the encoded image data and the control signal are performed at a decoder of the column driver integrated circuit and the scan driver integrated circuit.
Patent TW-561204-B (TW)
Title: Molten yarn take-up device
Inventor: IWADE TAKASHI
IPC: D01D5/092
Filed: 2001-03-23
Granted: 2003-11-11
Abstract: A molten yarn take-up device, comprising a cooling device disposed on the underside of a spinneret with cooling air inlet parts surrounding around spin-out yarns, ejector parts connected to the underside of the cooling air inlet parts and blowing compressed air around the spin-out yarns, and airflow guide pipes connected to the underside of the ejector parts, characterized in that the cooling air led from the outsides to the insides of the cooling air inlet parts is moved in the direction of running of the spin-out yarns so as to increase the velocity of the cooling air through the airflow guide pipes.
Patent TW-569468-B (TW)
Title: Method to manufacture the organic light-emitting device
Inventor: WITTMANN GEORG
IPC: H01L51/40
Filed: 2001-04-11
Granted: 2004-01-01
Abstract: The present invention proposes a method to manufacture organic light-emitting diode (OLEDs), while in the conventional manufacturing method the color conversion layer is applied on a substrate without contact by using ""ink-jet-printing method"", and now the print method (which directly applies on the subtract) is used, namely, such methods which use the printing form are used. Based on this technique to operate for example the Flexo-printing and the offset printing.
Patent TW-I224806-B (TW)
Title: Semiconductor device and manufacturing method thereof
Inventor: SUZAWA HIDEOMI
IPC: H01L29/49
Filed: 2001-05-01
Granted: 2004-12-01
Abstract: There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24,25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.
Patent TW-555593-B (TW)
Title: Process for preparation of an EUO-structural-type zeolite, the zeolite that is obtained and its use as catalyst for isomerization of C8-aromatic compounds
Inventor: ROULEAU LOIC
IPC: B01J23/42
Filed: 2001-05-04
Granted: 2003-10-01
Abstract: This invention relates to a process for synthesis of an EUO-structural-type zeolite that comprises at least one element X that is selected from among silicon and germanium and at least one element T that is selected from among aluminum, iron, gallium, boron, titanium, vanadium, zirconium, molybdenum, arsenic, antimony, chromium and manganese, whereby said process is carried out in the presence of an organic structuring agent that is derived from dibenzyldimethylammonium (DEDMA) or its precursors and in the presence of nuclei of at least one zeolitic material of the same structure as the zeolite that is to be synthesized. The zeolite that is thus obtained has an X/T ratio of between 5 and 50. It is used in particular as a catalyst, for example in a process for isomerization of aromatic compounds with 8 carbon atoms per molecule.
Patent TW-I234545-B (TW)
Title: Process for the manufacture of anhydrous sodium perchlorate
Inventor: BOSSOUTROT JEAN-MICHEL
IPC: C01B11/18
Filed: 2001-05-23
Granted: 2005-06-21
Abstract: The present invention relates to a process for the manufacture of anhydrous sodium perchlorate, according to which an aqueous sodium perchlorate solution originating directly from electrolysis of aqueous sodium chlorate solution is subjected to vacuum evaporation. Another subject-matter of the invention is anhydrous sodium perchlorate crystals which retain good flowability and processes for the manufacture thereof.
Patent TW-I248442-B (TW)
Title: Substituted 2,3,7,8,9,10,11,12-octahydroazepino[4,5-6]pyrano[3,2-E]indoles
Inventor: FU JIAN-MIN
IPC: C07D491/12
Filed: 2001-07-05
Granted: 2006-02-01
Abstract: Disclosed are compounds of the following general structural formula, and use of the compounds, salts and solvates thereof, and pharmaceutical compositions containing the same in the treatment of a disease, disorder, and/or condition in a mammal wherein a 5-HT receptor is implicated and modulation of a 5-HT function is desired.
Patent TW-592767-B (TW)
Title: Drawing mechanism and game machine
Inventor: MIYATA HIDEAKI
IPC: A63F9/02
Filed: 2001-07-31
Granted: 2004-06-21
Abstract: There is provided a game machine to improve a game machine which increases or reduces a betted game value corresponding to the result of played games, so as to allow a player to enjoy the game. This game machine is provided with a mortar member 111. Two small holes 111R and 111B are bored at the inner surface 111X of the member 111. The player selects one of them by operating operation buttons 123R and 123B for a sub-game. The small hole 111R or 111B selected by the user becomes a prize-winning small hole. Next, a ball is thrown into the inner surface X of the member 111. When the thrown-in ball matches with the small hole selected by the player from the small holes 111R and 111B, this is decided to be the value of the user and the medals which the user bets are doubled.
Patent TW-479129-B (TW)
Title: Illumination and imaging device for multiple spectral regions, and coordinate measuring machine having an illumination and imaging device for multiple spectral regions
Inventor: MUELLER-RENTZ ARNOLD
IPC: G01B11/03
Filed: 2001-08-22
Granted: 2002-03-11
Abstract: An illumination and imaging device (2) for multiple spectral regions comprises an objective (21) that defines an optical axis (20). A beam splitter module (32) is arranged in the optical axis (20). Multiple light sources (35), from each of which an illuminating beam path (35a, 35b, 35c) proceeds, are associated with the beam splitter module (32). Also provided are multiple detectors (34), associated with each of which is an imaging beam path (34a, 34b, 34c). The illuminating beam paths (35a, 35b, 35c) and imaging beam paths (34a, 34b) have a common optical path segment in which the beam splitter module (32) is arranged. The illumination and imaging device (2) can advantageously be used in a coordinate measuring machine (1).
Patent TW-I231773-B (TW)
Title: Fischer-Tropsch catalyst enhancement
Inventor: DAAGE MICHEL A
IPC: B01J23/75
Filed: 2001-08-31
Granted: 2005-05-01
Abstract: A process of enhancing both the activity and the methane selectivity of a dispersed active metal (""DAM"") hydrogenation catalyst is disclosed wherein the DAM undergoes low temperature oxidation in a slurry phase to form an oxidized catalyst precursor that is unique in comparison to those formed by conventional high temperature deactivation processes. The oxidized catalyst precursor, which is stable, is subsequently reduced to form an enhanced catalyst by treatment with hydrogen-containing gas at elevated temperature. The process is useful in a wide variety of DAMs formed by art-recognized techniques. The process is equally applicable to the enhanced catalysts formed from the oxidized precursors and their use in hydrogenation reactions.
Patent TW-525176-B (TW)
Title: Charge pump circuit for use in high voltage generating circuit
Inventor: LEE BYEONG-HOON
IPC: H03K19/094
Filed: 2001-09-10
Granted: 2003-03-21
Abstract: Disclosed herein is a charge pump circuit that includes a plurality of serially connected pump stages. Each pump stage includes current paths connected between a gate terminal of a charge transfer transistor and a drain terminal thereof. One of the charge transfer paths allows charges to be transferred from the drain terminal to the gate terminal while the other one thereof allows charges to be transferred from the gate terminal to the drain terminal. The charge pump circuit of the above-described structure can generate a high voltage at a very low power supply voltage (e.g., 2V or lower) as a target voltage.
Patent TW-511258-B (TW)
Title: Substrate-on-chip packaging process
Inventor: LIN CHUNG-HUNG
IPC: H01L23/16
Filed: 2001-09-17
Granted: 2002-11-21
Abstract: A SOC (substrate-on-chip) packaging process is disclosed. A layer of two stage thermosetting mixture with solvent is coating on an upside of a substrate. Thereafter, the substrate is heated for removing solvent so that the two stage thermosetting mixture becomes a dry adhesive film without solvent. Thus, the bonding pads of the chip are not covered by the dry adhesive film and a better operating flexibility is obtained in the SOC packaging process. Preferably, the dry adhesive film is cured during molding.
Patent TW-527620-B (TW)
Title: Method and device for irradiating an ion beam, and related method and device thereof
Inventor: SAKAI SHIGEKI
IPC: C23C14/48
Filed: 2001-11-02
Granted: 2003-04-11
Abstract: When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the substrate 2 to suppress electric charging on a substrate surface caused by ion beam irradiation. A ratio of IE/IB is kept at a value not lower than 1.8, a ratio of II/IE is kept at a value not lower than 0.07 and not higher than 0.7, wherein IB is an electric current of the ion beam 14 irradiated onto the substrate 2, II is an ion current expressing a quantity of ions in the plasma 30 emitted from the plasma generating device 20, and IE is an electron current expressing a quantity of electrons in the plasma 30.
Patent TW-515062-B (TW)
Title: Package structure with multiple glue layers
Inventor: WANG PING-SONG
IPC: H01L51/50
Filed: 2001-12-28
Granted: 2002-12-21
Abstract: A display device package structure is provided. It comprises a transparent substrate on whose upper surface a light-emitting device is put, a cover plate whose bottom surface frame is connected to the glass substrate frame to construct a close space. A sealing glue layer structure consists of at least a first sealing glue layer and a second sealing glue layer. The first sealing glue layer is formed on the surrounding of the light-emitting device or cover the whole light-emitting device. The second sealing glue layer surrounds the outer periphery of the first sealing glue layer and its material is different from the first one's.
Patent TW-524031-B (TW)
Title: Flexible printed board
Inventor: KUDO NORIAKI
IPC: C23C28/00
Filed: 2001-12-31
Granted: 2003-03-11
Abstract: The present invention is a type of flexible printed board formed by a polyimide resin layer, made from polyamic acid, on a copper foil. With excellent adhesion strength between the copper foil and the polyimide layer and acceptable flatness, the flexible printed board can be applied for accomplishing high precision of circuit patterns. The solution is to provide a type of flexible printed board formed by an electrolytic copper foil, a zinc metallic layer, and a polyimide resin layer wherein the electrolytic copper foil has not been performed by a coarsening process, the zinc metallic layer has a throughput of 0.25 to 0.40 mg/dm and is placed on the electrolytic copper foil, and the polyimide resin layer is formed by the imidation of polyamide acid placed on the zinc metallic layer.
Patent TW-585001-B (TW)
Title: Electrical connection system and method for flat circuits
Inventor: HUANG SAN-SHAN
IPC: H04W88/02
Filed: 2002-01-22
Granted: 2004-04-21
Abstract: A system provides an electrical connection with a flat circuit (28) and includes a generally rigid dielectric support structure (26). The flat circuit is located on one side (36) of the support structure. A terminal (32) includes a contact portion (32a) at an opposite side (38) of the support structure for electrically engaging a complementary connecting device (16, 18). A shank portion (32b) of the terminal (32) extends from the contact portion (32a) through the support structure (26). A terminating portion (32c) at an end of the shank portion (32b) is terminated to an appropriate conductor (42) of the flat circuit (28) at the one side (36) of the support structure (26).
Patent TW-588083-B (TW)
Title: Flame retarded polyolefin resin compositions
Inventor: TERAMOTO MAKOTO
IPC: C08K5/3492
Filed: 2002-02-06
Granted: 2004-05-21
Abstract: A flame retarded polyolefin resin composition comprises polyolefin resin, 1 to 40 parts by weight per 100 parts of the polyolefin resin of a brominated bisphenol ether derivative of the formula 1: wherein R is hydrogen or methyl, and A is -C(CH3)2-, -SO2-, -S-, or -CH2-; and 1 to 30 parts by weight per 100 parts of the polyolefin resin of a compound of the formula 2: wherein B is mono-, di- or tribromophenyl group, n is an integer from 1 to 20, and A is as defined above.
Patent TW-546836-B (TW)
Title: Semiconductor device and a method of manufacturing the same
Inventor: HASHIMOTO TAKASHI
IPC: H01L21/8249
Filed: 2002-02-22
Granted: 2003-08-11
Abstract: This invention relates to a method for manufacturing a semiconductor device, comprising the steps of: (a) depositing a silicon nitride film on a semiconductor substrate; (b) depositing a base electrode forming silicon film of a bipolar transistor on the silicon nitride film; (c) depositing a first silicon oxide film on the base electrode forming silicon film; (d) forming an opening that reaches the silicon nitride film on the first silicon oxide film and the base electrode forming silicon film; (e) forming a second silicon oxide film on the side surface of the base electrode forming silicon film that is exposed from the aperture by applying oxidation treatment on the semiconductor substrate; (f) etching and removing the silicon nitride film isotropically, so that a side surface of the silicon nitride film is recessed from a side surface of the silicon film that forms the base electrode in the opening by applying wet etching treatment on the silicon nitride film; and (g) forming an epitaxial layer that forms the base region selectively on the semiconductor substrate that is exposed from the opening.
Patent TW-527304-B (TW)
Title: Web tensioning device
Inventor: COOK PETER WILLIAM
IPC: B65H27/00
Filed: 2002-04-18
Granted: 2003-04-11
Abstract: A device for tensioning web, such as a plastics web dispensed from a shuttle in a wrapping machine, is disclosed. The wrapping machine usually includes an endless track positioned about an object to be wrapped and the shuttle travels on the endless track, dispensing the web as it goes. The rate at which web is dispensed varies as the shuttle progresses around the track and is dependent upon the shape of the track and the shape of the object to be wrapped. The web tensioning device attempts to maintain a constant tension in the web and includes a pair of rollers covered with resilient material. The rollers are urged together to form a nip with the resilient covering of the rollers compressed in the nip. The web is fed between the nip of the rollers.
Patent TW-588259-B (TW)
Title: Management system for vending machine and host computer for vending machine management
Inventor: OHTSUKI TAKAHIRO
IPC: G06Q50/00
Filed: 2002-08-02
Granted: 2004-05-21
Abstract: A portable communication terminal obtains a program for terminals from a host computer and executes it. The program for terminals obtains all or a part of data stored in a database server from the host computer and renews the obtained data. The renewed data is sent to the host computer, and the data in the database server is renewed.