Patent SG-11201808193S-A (SG)
Title: Method for manufacturing a structure for forming a tridimensional monolithic integrated circuit
Inventor: FIGUET CHRISTOPHE
IPC: H01L25/00
Filed: 2017-03-31
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 11111111011110111010101111101011111011101111111111110111111101111101111011111 International Bureau .. .... ..Yejd .... ...,,, (10) International Publication Number (43) International Publication Date WO 2017/167976 Al 5 October 2017 (05.10.2017) IN I PO I P CT (51) International Patent Classification: Chemin du Mollard, 38330 SAINT NAZAIRE LES HO1L 21/18 (2006.01) HO1L 25/00 (2006.01) EYMES (FR). DELPRAT, Daniel; 19 impasse des Courl- HO1L 21/306 (2006.01) is, 38920 CROLLES (FR). RADU, Ionut; 434 Avenue de la Resistance, 38920 CROLLES (FR). (21) International Application Number: PCT/EP2017/057717 (74) Agent: REGIMBEAU; 139 Rue Vend6me, 69477 LYON Cedex 06 (FR). (22) International Filing Date: 31 March 2017 (31.03.2017) (81) Designated States (unless otherwise indicated, for every (25) Filing Language: English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (26) Publication Language: English BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (30) Priority Data: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, 1652768 31 March 2016 (31.03.2016) FR KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, (71) Applicant: SOITEC [FR/FR]; Parc Technologique des MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, Fontaines, Chemin des Franques, 38190 BERNIN (FR). NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (72) Inventors: FIGUET, Christophe; 438 me Hector Berlioz, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, 38920 CROLLES (FR). ECARNOT, Ludovic; 407 Aven- ZA, ZM, ZW. ue du Golf,38410 VAULNAVEYS-LE-HAUT (FR). NGUYEN, Bich-Yen; 110 S. Laurelwood Drive, Austin, (84) Designated States (unless otherwise indicated, for every — TEXAS 78733 (US). SCHWARZENBACH, Walter; 19, kind of regional protection available): ARIPO (BW, GH, [Continued on next page] (54) Title: METHOD FOR MANUFACTURING A STRUCTURE FOR FORMING A TRIDIMENSIONAL MONOLITHIC IN- TEGRATED CIRCUIT = (57) : The invention relates to a method for manufacturing a structure = comprising a first substrate (1) comprising at least one electronic component (10) likely to be damaged by a temperature higher than 400°C and a semi-con- = FIG. 3 ductor layer extending on said first substrate, characterised in that it comprises = the following steps of: (a) providing a first bonding metal layer (11) on the first — ..-..„,_,,, 20 substrate (1), (b) providing a second substrate (2) comprising successively: -a semi-conductor base substrate (20), -a stack (21) of a plurality of semi-conduct- or epitaxial layers, a layer (210) of Si x Ge i _ x , with 0 < x <1 being located at the surface of said stack (21) opposite to the base substrate (20),1-a second bonding metal layer (22), (c)bonding the first substrate and the second substrate through the first and second bonding layers(11, 22),said bonding being metal step car- II II III 11111111 II 111111 , , ..,_, 213 ried out at a temperature lower than or equal to 400°C, (d) removing a part of ,—.....212 the second substrate so as to transfer the layer (210) of Si x Ge i _ x on the first sub- strate(1), said removing comprising at least selectively chemically etching a lay- e\",......., 211 er of the second substrate (2) relative to the Si Ge x i , layer (210). .--„, 210 // 22 10 .., ,-, IN ,-, © ei 0 WO 2017/167976 Al MIDEDIMOMOIDEIR010130HINEROMMOVOIMIE GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Declarations under Rule 4.17: TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, DE, LT, of inventorship (Rule 4.17w)) Published: LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, SE, GA, with international search report 21(3)) (Art. GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).