baber/WOPTO huggingface dataset:
Patent TW-436486-B (TW)
Title: Quinazoline derivatives, process for the preparation thereof and pharmaceutical composition containing same
Inventor: GIBSON KEITH HOPKINSON
IPC: C07D401/12
Filed: 1996-04-08
Granted: 2001-05-28
Abstract: The invention concerns quinazoline derivatives of the formula I wherein n is 1, 2 or 3 and each R2 is independently halogeno, trifluoromethyl or (1-4C)alkyl; R3 is (1-4C)alkoxy; and R1 is di-[(1-4C)alkyl] amino-(2-4C)alkoxy, pyrrolidin-1-yl-(2-4C)alkoxy, piperidino-(2-4C)alkoxy, morpholino-(2-4C)alkoxy, piperazin-1-yl-(2-4C)alkoxy, 4-(1-4C)alkylpiperazin-1-yl-(2-4C)alkoxy, imidazol-1-yl-(2-4C)alkoxy,di-[(1-4C)alkoxy-(2-4C)alkyl]amino-(2-4C)alkoxy, thiamorpholino-(2-4C)alkoxy, 1-oxothiamorpholino-(2-4C)alkoxy or 1,1-dioxothiamorpholino-(2-4C)alkoxy, and wherein any of the above-mentioned R1 substituents comprising a CH2 (methylene) group which is not attached to a N or O atom optionally bears on said CH2 group a hydroxy substituent; or pharmaceutically-acceptable salts thereof; processes for their preparation, pharmaceutical compositions containing them, and the use of the receptor tyrosine kinase inhibitory properties of the compounds in the treatment of proliferative disease such as cancer.
Patent TW-307952-B (TW)
Title: Integrated circuit MOS gate-controlled power semiconductor device
Inventor: BRUNO C NADD
IPC: H03K17/94
Filed: 1996-04-10
Granted: 1997-06-11
Abstract: A integrated circuit MOS gate power semiconductor device with high negativeclamping voltage and error operation protection, with one MOS gate-controlledsemiconductor power device, has one first and second power electrode and onecontrol electrode, one input circuit which can generate signal to open orclose the power device. It features that between first power electrode and control electrode of thepower device, when the main control MOSFET opens, the power device is turnedoff, and includes one signal level translator circuit and inverter circuit;the inverter circuit is coupled to the main control MOSFET to open thecontrol MOSFET for responding one turn off input signal; the main control MOSFET threshold conduction voltage is lower than the MOSpower semiconductor power device's.
Patent TW-327191-B (TW)
Title: Process for producing granular detergent components or compositions
Inventor: PETER RUTHERFORD BROUGHAM
IPC: C11D11/00
Filed: 1996-06-27
Granted: 1998-02-21
Abstract: A process for the preparation of a granular detergent composition or component having a bulk density greater than 650 g/l, which comprises dispersing a liquid binder throughout a powder stream in a high speed mixer to form granular agglomerates, in which the powder stream comprises a powder consisting essentially of crystalline zeolite A, P, X, or mixtures thereof, and crystalline zeolite HS, in which the powder consisting essentially of crystalline zeolite A, P, X, or mixtures thereof, and crystalline zeolite HS has an oil absorbing capacity of at least 40 ml/100 g, in which the ratio between the amount of the crystalline zeolite A, P, X, or mixtures thereof to the amount of the crystalline zeolite HS is 1:1 to 99:1, and in which the residence time of the granular agglomerates being mixed in the high speed mixer is between 2 seconds and 30 seconds, followed by being further mixed in a medium speed mixer/binder for a residence time less than 5 minutes, in which fine powders may be added if necessary.
Patent TW-341495-B (TW)
Title: Fungicidal mixtures
Inventor: BARBARA SCHW
IPC: A01N37/50
Filed: 1996-08-14
Granted: 1998-10-01
Abstract: A fungicidal mixture comprising (a) an oxime ether carboxamide of the formula I (I) where R is hydrogen or halogen and (b) (±)-(2-chlorophenyl)(4-chlorophenyl)(pyrimidin-5-yl)methanol in a synergistically active amount.
Patent TW-369761-B (TW)
Title: Testing/adjustment method and system for convergence color cathode emission image tube
Inventor: Cai yu-liang
IPC: H04N17/00
Filed: 1996-08-24
Granted: 1999-09-11
Abstract: A sort of testing/adjustment method and system for convergence color cathode emission image tube. In the first phase of the first cycle, by using the basic points of the matrices on a matrix graphic and the green dot on two auxiliary points for emission of light and, an electronic camera is used for reading the absolute coordinate and in the second phase, the green spots on the basic points are made to emit light, making the 2 auxiliary points glow in red and blue light and, based on the basic point, in the first and the second phase, the shift of the green dot is used for obtaining the color-restraining difference between the red light and the blue light of the matrix point, for comparison with the allowable convergence for adjustments. Besides, the electronic camera in use comes with at least 2 electronic cameras as a 3D-multiple-lens system.
Patent TW-429153-B (TW)
Title: Aerosol compositions
Inventor: MURATA SABURO
IPC: A61P43/00
Filed: 1996-09-19
Granted: 2001-04-11
Abstract: The use of a medium-chain fatty acid triglyceride as the dispersant in the preparation of a medicinal aerosol composition comprising tricyclic compound (I) dispersed in a liquefied hydrofluoroalkane propellant is described. When a liquefied hydrofluoroalkane is added to a kneaded premix of the tricyclic compound (I) and a medium-chain fatty acid triglyceride, the active ingredient is evenly dispersed in the liquefied hydrofluoroalkane. Therefore, by distributing a dispenser first with the kneaded premix and, then, with a liquefied hydrofluoroalkane under cooling or elevated pressure, there can be provided a medicinal aerosol composition an improved uniformity of content of the active ingredient.
Patent TW-534908-B (TW)
Title: Nodulisporic acid derivatives
Inventor: MEINKE PETER T
IPC: C07D491/16
Filed: 1996-09-19
Granted: 2003-06-01
Abstract: The present invention relates to novel nodulisporic acid derivatives, which are acaricidal, antiparasitic, insecticidal and anthelmintic agents. A compound having the formula I: wherein R1+R2 are =O, =N-OH or -OH; R3 is OH or =O; R4 is OH, =O, OCO2CH2CH=CH2 or R5 and R6 are H or together represent -O-; R7 is (1) CHO, or (2) the fragment, R8 and R9 are independently H, OH or =O; R10 is C(O)ORb, C(O)NHRx or C(O)NRxRy wherein Rb is H, C1-6alkyl or C1-6alkylhydroxy; Rx is H, C1-6alkyl, C1-6alkylhydroxy, -CH2-pyrimidinyl, -CH2Ph-Rz (Rz: H, C1-6alkyl, halogen, -O-C1-6alkyl, -O-C2-6alkenyl, -O-C2-6alkynyl, -OCF3 or -OPh), NHCH2Ph-Rw (Rw: H, halogen or C1-4alkyl), and Ry is H or C1-4alkyl, represents a single or a double bond; or a pharmaceutically acceptable salt thereof; and excluding nodulisporic acid, 29,30-dihydro-20,30-oxa-nodulisporic acid, and 31-hydroxy-20,30-oxa-29,30,31,32-tetrahydro-nodulisporic acid.
Patent TW-339447-B (TW)
Title: Metal halide lamp
Inventor: HORIUCHI MAKOTO
IPC: H01J61/86
Filed: 1996-10-18
Granted: 1998-09-01
Abstract: A sort of metal halide lampo, having: a transparent container including, in addition to a starting gas, iodide having In and iodide having Tb, Dy, Ho, Er, Tm; or mixture with Tb, Dy, Ho, Er, Tm stuffed in the transparent container, where 0.1mg/cc to 1.5mg/cc of iodide having In is stuffed.
Patent TW-333483-B (TW)
Title: Process for producing a low-oxygen, low-carbon iron-based powder
Inventor: JOHAN ARVIDSSON
IPC: C22C33/02
Filed: 1996-10-30
Granted: 1998-06-11
Abstract: A process for producing low-oxygen, low-carbon iron-based powder, which comprises the steps of: (a) preparing a powder essentially consisting of iron and optionally at least one alloying element selected from the group consisting of chromium, manganese, vanadium, niobium, boron, silicon, molybdenum, tungsten; (b) decarburizing the powder in an atmosphere containing at least H2 and H2O gases; (c) measuring the concentration of at least one of the carbon oxides (alternatively gases) formed during the decarburization process, or (d) measuring the oxygen potential on at least 2 spots located at a predetermined distance from each other in the longitudinal direction of the furnace; (e) adjusting the content of the H2O-gas in the decarburizing atmosphere with the aid of the measurement.
Patent TW-374918-B (TW)
Title: Semiconductor memory device having multilevel memory cell array
Inventor: HASHIMOTO KIYOKAZU
IPC: G11C11/56
Filed: 1997-02-05
Granted: 1999-11-21
Abstract: The semiconductor memory device according to the present invention includes a multilevel memory cell array having a plurality of multilevel memory cells each of which storing data of at least three bits, a regular memory cell array having a plurality of regular memory cells each of which storing data of two bits, a first X decoder which selects a word line of the multilevel memory cell array corresponding to an input address, a second X decoder which selects a word line of the regular memory cell array corresponding to the input address, a pulse generator circuit which generates a plurality of pulse signals with mutually different active periods, a voltage generator circuit which generates a control signal whose voltage varies stepwise corresponding to the levels of the plurality of pulses, supplying means for supplying the control signal to the selected word line of the multilevel memory cell array, selecting means for selecting a bit line of either one of the regular memory cell array or the multilevel memory cell array in response to the input address, and an amplifier circuit which amplifies the level of the selected bit line and outputs the result.
Patent TW-464997-B (TW)
Title: Lead-on-chip semiconductor device package having an adhesive layer formed from liquid adhesive and method for manufacturing the same
Inventor: SONG YOUNG-JAE
IPC: H01L23/50
Filed: 1997-04-12
Granted: 2001-11-21
Abstract: A lead-on-chip semiconductor device package is formed by attaching a lead frame having a single adhesive layer to the chip. Electrode pads of the chip are electrically connected by bonding wires and mechanically connected by the adhesive layer to the lead frame, and then encapsulated by encapsulant such as molding compound. The adhesive layer is formed from a liquid adhesive having a viscosity. The adhesive material is continuously applied to the space between inner leads as well as the top surface of the leads and then cured. The leads are disposed at the same intervals and include some side leads with a larger width in order to form the adhesive layer with a uniform thickness. Thermoplastic resins are preferably used as the adhesive, but thermosetting resins are used as well. In case of thermoplastic resins, the temperature of cure is about 200 DEG C and that of chip attachment is about 400 DEG C.
Patent TW-397806-B (TW)
Title: Method of making a coated optical fiber having a strippable polyimide coating
Inventor: VACHA LUBOS J
IPC: G02B6/10
Filed: 1997-05-15
Granted: 2000-07-11
Abstract: A method of making an optical fiber having a strippable polyimide coating includes the steps of drawing an optical fiber through curable polyamic acid solution to form a coating on the fiber and curing the coated fiber. The cured coating can subsequently be stripped from the optical fiber by exposing the cured coating to an organic polar solvent such as acetone. A fiber having a strippable polyimide coating is also provided. The method is particularly applicable to heavy metal fluoride fibers, and to chalcogenide fibers which carry optical signals in the infrared region.
Patent TW-328561-B (TW)
Title: Air-cooling absorbing type air conditioner
Inventor: ISHIGURO KATSUSUKE
IPC: F25B15/06
Filed: 1997-05-19
Granted: 1998-03-21
Abstract: An air-cooling absorbing type air conditioner, which comprises: a regeneration part; a condensing part; an air-conditioning part; an external pipe; and a fan; in which, in the chamber formed between the circulation pipe and the external pipe, the air-cooling absorbing type air conditioner carries out air-conditioning operations by distributing the liquid coolant from the condenser on the outside of the circulation pipe, and distributing the absorbing liquid from the regeneration part on the inside of the external pipe, and cooling the thermal media circulating in the circulation pipe, which is characterized in that: during the warming operation, in the chamber, the liquid coolant from the condenser is distributed on the inside of the external pipe, and the absorbing liquid from the regeneration part is distributed on the outside of the circulation pipe, to heat the thermal media in the circulation pipe; the fan, during the cooling operation, blows wind from the external pipe to the condensing part; and during the warming operation, blows wind from the condensing part to the external pipe.
Patent TW-344895-B (TW)
Title: Delay element tester and integrated circuit with test function
Inventor: KOBAYASHI NORIFUMI
IPC: G01R31/30
Filed: 1997-06-21
Granted: 1998-11-11
Abstract: A delay element testing device characterized in comprising: a signal generator for generating a plurality of signals having at least one variable time sequence; a phase comparator for comparing the phase relationship between the signals having a variable time sequence in the plurality of signals and the signals prior to and after passing through the delay element under test; and a testing result output circuit controlled by a control signal generated by the phase comparator and outputting a signal indicating whether the delay characteristics of the delay element under test is good or bad.
Patent TW-340968-B (TW)
Title: Carrying method of lead cells and the carrier
Inventor: SHIOZAWA SHIGERU
IPC: H01L21/60
Filed: 1997-07-18
Granted: 1998-09-21
Abstract: A sort of carrying method of lead cells, having a cell feeder claw to hold lead frames fed by the load housing, being it connected in the manner of a carrying claw, with a positioning sensor for detection of the position of the front end of the lead frame and, after positioning, the claw shall hold the cell and the initial joint of the lead cell shall be moved to the joint.
Patent TW-368636-B (TW)
Title: Dynamic conversion between different instruction codes by recombination of instruction elements
Inventor: HILGENDORF ROLF
IPC: G06F9/30
Filed: 1997-10-13
Granted: 1999-09-01
Abstract: The invention provides an apparatus and a method for converting instructions of a code A to instructions of a code B. Said conversion is performed by obtaining rearrangement information, which corresponds to the instruction that is to be converted, from a table. Said rearrangement information is then used to rearrange the instruction elements of the initial instruction, in order to generate instructions of code B, which functionally corresponds to said initial instruction. Said rearrangement can be performed by multiplexing means, which use said instruction elements of the initial code A instruction as input, and which select one of said instruction elements, or the content of another register, and forward this selected data to the instruction that is to be generated. Said rearrangement information is directly used to control the selection performed by said multiplexers.
Patent TW-359917-B (TW)
Title: Trigger voltage controllable Schmitt trigger circuit
Inventor: PANG DAI-SUNG
IPC: H01L27/10
Filed: 1997-10-14
Granted: 1999-06-01
Abstract: A trigger voltage controllable Schmitt trigger circuit consists of: a trigger-inverting output unit for trigger-inverting input signals in a predetermined margin; a trigger voltage control signal output unit for generating control signals for controlling trigger voltage according to external control signals, the unit including a linear differential amplifier; and first and second trigger voltage control units for changing margins of trigger performed by the trigger-inverting output unit, the units including transistors whose resistance ratios linearly change according to the control signals from the trigger voltage control signal output unit.
Patent TW-593796-B (TW)
Title: Method for manufacturing silicon single crystals background of the invention
Inventor: SAISHOUJI TOSHIAKI
IPC: C30B15/00
Filed: 1997-10-20
Granted: 2004-06-21
Abstract: The object of this invention is to provide a method for manufacturing silicon wafers, which is capable of preventing the occurrence of abnormal oxygen precipitation and equalizing the distribution of grown-in defects within the portion near the rear part of a single-crystal body. The cooling speed of the portion near the rear part of a single-crystal body and passing through the defect-forming temperature zone is kept the same as that of the front portion of the single-crystal body. Namely, the heater is kept in operation while lifting the silicon single crystal subsequent to forming the tail of the silicon single crystal and the cooling speed throughout the whole single-crystal body in the defect-forming temperature zone is kept below 15 DEG C/min (levels A and B). Furthermore, the length of the tail is preset in the process of lifting the silicon single crystal so that the single-crystal body cools down slowly while passing through the defect-forming temperature zone (level C). In addition, the temperature of the portion near the rear part of the single-crystal body under lifting is below the minimum temperature of the defect-forming temperature zone by shortening the distance between melted liquid surface and the portion passing through the defect-forming temperature zone of the single-crystal, and by increasing the temperature gradient along the single-crystal axis (level D).
Patent TW-368699-B (TW)
Title: Manufacturing method for semiconductor device and manufacturing device for semiconductor
Inventor: MURANAKA SEIJI
IPC: C23C16/02
Filed: 1997-12-29
Granted: 1999-09-01
Abstract: During the semiconductor wafer processes, employing wet cleaning as the cleaning method before the filming process. There are a plurality of contamination generation danger during transporting the filming device for filming and applying cleaning process before the filming. The invented method is that during the treatment process of semiconductor wafer and before the filming processes, to inhale the hydrogen into the same chamber for the filming and heat the chamber to generate hydrogen free radical or employing the plasma to generate hydrogen free radical or baking the semiconductor wafer to remove the contaminant on the surface of semiconductor wafer; then, in the chamber, to apply the filming process for conduction film or insulation film.
Patent TW-442656-B (TW)
Title: Method for examining the distribution of residual stress
Inventor: JIAN REN-DE
IPC: G01L1/04
Filed: 1998-02-23
Granted: 2001-06-23
Abstract: This invention is about a kind of method for examining the distribution of residual stress without the externally added stress. For the method of examining the distribution of residual stress, comb-shaped cantilever beams are formed for the sample to be examined by using chemical etching process. After chemical etching process, the warp quantity of each cantilever beam is measured so as to obtain the status of residual stress distribution for the sample to be examined. The method for examining the distribution of residual stress in this invention is suitable for use in thin plate of metal slice and its processed end items.
Patent TW-442768-B (TW)
Title: Security system activated and deactivated by image variation
Inventor: DAI GUANG-JENG
IPC: G08B13/194
Filed: 1998-03-13
Granted: 2001-06-23
Abstract: The invention is a security system activated and deactivated in accordance with image variation. With an image capture device, the security system can obtain digital image information and compare the bitmap between image frames of the fetched image based on the time sequence, and further adjust the system tolerance in accordance with the comparison results so that the tolerance generated by the environment and equipment itself can be accepted when fetching the image, and further proceed the execution of monitoring procedures based on the configured key frame and sensitivity. Such monitoring procedures compare the fetched bitmap frame by system with the key frame and activate the security operation when the varied pixel portion is determined to be equivalent to or greater than the sensitivity. After the activation of security operation, compare the fetched bitmap and key frame. If the varied pixel portion is less than the sensitivity, the security operation is deactivated.
Patent TW-406023-B (TW)
Title: Pharmaceutical formulations containing voriconazole
Inventor: HARDING VALERIE DENISE
IPC: A61K31/505
Filed: 1998-05-05
Granted: 2000-09-21
Abstract: The invention provides a pharmaceutical formulation comprising voriconazole, or a pharmaceutically acceptable derivative thereof, and a cyclodextrin derivative of formula I, wherein R<1a-g>, R<2a-g> and R<3a-g> independently represent OH or O(CH2)4SO3H; provided that at least one of R<1a-g> represents O(CH2)4SO3H; or a pharmaceutically acceptable salt thereof.
Patent TW-393585-B (TW)
Title: Liquid crystal display
Inventor: KIM HYANG-YUL
IPC: G02F1/1337
Filed: 1998-06-30
Granted: 2000-06-11
Abstract: A liquid crystal display. The display has a first substrate and a second substrate. One of the substrates is disposed opposite the other a first distance apart.  Each of the substrates has an inner surface and an outer surface that is opposite the inner surface. A liquid crystal layer is sandwiched between the inner surfaces of the substrates. At least a pair of a first electrode and a second electrode are arranged along a first direction on the inner surface of the first substrate. The first electrode is disposed parallel to the second electrode a second distance apart. A first homeotropic alignment film is disposed on the first substrate including the first and second electrodes. At least a pair of a third electrode and a fourth electrode are arranged along a second direction on the second substrate. The third electrode is disposed parallel to the fourth electrode a third distance apart, wherein the first direction is perpendicular to the second direction. A second homeotropic alignment film is disposed on the second substrate including the third and fourth electrodes. A first polarizer is disposed on the outer surface of the first substrate; and a second polarizer is disposed on the outer surface of the second substrate.
Patent TW-383504-B (TW)
Title: Manufacturing method for completely self-aligned TFT-LCD
Inventor: SHR SHIUE-FENG
IPC: H01L29/78
Filed: 1998-07-15
Granted: 2000-03-01
Abstract: A kind of manufacturing method for completely self-aligned TFT-LCD which is to pattern a kind of ITO layer and the first metal layer on the glass substrate; continuously depositing the first silicon nitride layer and forming silicon layer and the second silicon nitride layer on the substrate; employing gate electrode as the back-exposing mask; etching the uncovered portion of the second silicon nitride layer by the positive photoresist; forming heavily doped silicon on the substrate; forming a negative photoresist on the heavily doped silicon layer; then, applying again the back-exposing method; removing the heavily doped silicon layer on the etched second silicon nitride layer; generating holes to expose part of the first metal layer; forming the second and third metal layer respectively; then, applying thermal annealing to form metal silicide; patterning the third and second metal layers; defining the island pattern; then, depositing protection layer on the island pattern formed by silicon nitride layer.