baber/WOPTO huggingface dataset:
Patent TW-I225874-B (TW)
Title: Method for processing a mineral filler with a phosphate, mineral fillers treated in this manner, polyurethane foams and composite polyurethanes using this filler, objects containing them which may or may not be moulded
Inventor: FICHOU JEAN-PIERRE
IPC: C09K23/14
Filed: 1999-06-22
Granted: 2005-01-01
Abstract: The invention relates to the technological sector of mineral fillers used in the sector which manufactures polyurethane foams and in particular fillers of the carbonate, hydroxide, silicate, sulphate type and similar mineral fillers. The invention relates in particular to a method of treating mineral fillers of a specific grain size with the aid of treatment agents of the organic phosphate type, incorporating a de-agglomeration step, and optionally a selection step, with a view to improving the techniques used to manufacture polyurethane foams either by foaming without an auxiliary blowing agent or with a blowing agent such as CO2, and composite polyurethane, whilst reducing the time needed to mix this treated filler treated with the polyol and other reagents. Numerous applications for block foams or moulded foams, for mattresses and similar, the automotive industry, various industrial components, etc...
Patent TW-432390-B (TW)
Title: Jet pump auxiliary wedge
Inventor: ERBES JOHN GEDDES
IPC: G21C19/02
Filed: 1999-12-07
Granted: 2001-05-01
Abstract: An auxiliary wedge apparatus (36) configured to couple to the restrainer bracket (28B) of a jet pump assembly (10) is described. In one embodiment, the auxiliary wedge apparatus (36) includes a support block (38) configured to couple to the restrainer bracket (28B), and a wedge (40) configured to slidingly couple to a wedge channel (42) in the support block (38), and to engage the inlet mixer (16B) to restore a tight rigid fit-up of the jet pump (10) components. The support block (38) includes a wedge channel (42) having tongues (72A, 72B) depending from the parallel sides (70A, 70B) of the channel (42) and a hook shaped portion (52) configured to receive the restrainer bracket (28B). The support block (38) also includes a lock screw (56) to couple the support block (38) to the restrainer bracket (28B). The wedge (40) includes grooves (76A, 76B) in the parallel sides (78A, 78B) of the wedge (40) configured to slidingly engage the tongues (72A, 72B) extending in the wedge channel (42). The auxiliary wedge apparatus (36) also includes a restraint arm (44) depending from the support block (38) configured to capture the existing set screw (32C) in the restrainer bracket (28) to prevent the screw (32C) from completely unscrewing.
Patent TW-430912-B (TW)
Title: Guide rail for carrying belt-like member
Inventor: SATO KIMIIHARU
IPC: H01L21/50
Filed: 1999-12-16
Granted: 2001-04-21
Abstract: The object of the present invention is to reduce frictional resistance, and easily pull out the belt-like member from a guide part. To achieve the object, there is provided a guide rail for carrying a belt-like member. The guide rails 10A and 10B are composed of rail bodies 11A and 11B, and guide members 12A and 12B being fixed onto the upper surface of the rail bodies 11A and 11B while the upper surface of a belt-like member 1 is partially guided.
Patent TW-I224111-B (TW)
Title: Low substitution degree hydroxy-propyl cellulose
Inventor: UMEZAWA HIROSHI
IPC: C08L1/02
Filed: 2000-01-17
Granted: 2004-11-21
Abstract: The present invention provides a hydroxypropylcellulose having a low substitution degree, capable of giving a solution state which is excellent in transparency and stable in a wide temperature range, by controlling the amount of the substituted hydroxypropyl groups. This hydroxypropylcellulose having a low substitution degree has an average substituted hydroxypropyl group content of 0.1-0.4 mole per glucose unit. Therein, the glucose units each substituted by two or more moles of the hydroxypropyl groups are contained in an amount of <=5% based on the number of all the glucose units, and the transmittancy of a solution containing the hydroxypropylcellulose in a concentration of 2 wt.% in a 10 wt.% sodium hydroxide aqueous solution is >=90% at 10-50 DEG C.
Patent TW-478177-B (TW)
Title: Semiconductor component to generate a blended color electro-magnetic beam
Inventor: HOMMEL DETLEF
IPC: H01L33/00
Filed: 2000-01-25
Granted: 2002-03-01
Abstract: Semiconductor component to generate a blended color electro-magnetic beam (S), which has a semiconductor-chip (C) with a first semiconductor-layer (R) and a second semiconductor-layer (E) which is arranged adjacent to the first layer (R) and has an electro-luminescing region (B). The first semiconductor-layer (R) has a material, which can re-emit a beam with at least a longer wavelength λR when excited with a first electro-magnetic beam of wavelength λE that is sent out from the second semiconductor-layer (E).
Patent TW-593180-B (TW)
Title: Glass base material packing method
Inventor: NAGAO TAKAAKI
IPC: B65D85/30
Filed: 2000-04-01
Granted: 2004-06-21
Abstract: A method of packing a glass base material (10, 20, 30), which is a base material of an optical fiber comprising packing the glass base material (10, 20, 30) into a cylindrical container (16, 26, 36). The packing has: putting the glass base material (10, 20, 30) into a plastic bag (12, 22, 32); and packing the glass base material (10, 20, 30), which is put into the plastic bag (12, 22, 32), into the cylindrical container (16, 26, 36). The packing further has: wrapping the glass base material (10, 20, 30), which is put into the plastic bag (12, 22, 32), with air packing material (14, 24, 34), which contains air inside; and packing the glass base material (10, 20, 30) wrapped with the air packing material (14, 24, 34) into the cylindrical container (16, 26, 36).
Patent TW-463444-B (TW)
Title: System for power connection and reconnection
Inventor: EKELUND FOLKE
IPC: H02J1/14
Filed: 2000-03-01
Granted: 2001-11-11
Abstract: A full float system with transient free multiple load disconnection reconnection (TFMLDR) is disclosed. The system is based on a concept of always connecting loads and dedicated rectifiers together, and then connect such groups (1-n) via power switching devices (C1-Cn) to a pair of busbars. A backup battery is typically connected directly to the busbars via a respective fuse (F1-Fy). The disconnection/reconnection of individual groups to a busbar can then be controlled such that no transients are produced in the system voltage. Such a system is advantageous for reconnection of a load after a disconnection due to a mains power failure. The loads present a substantial input capacitance assisting in stabilizing DC power supply to the load and this load is directly connected to a rectifying unit delivering voltage controlled power during normal mains power operation. After a disconnection of a load from the busbar and the battery by the power switching member, a reconnection will be done in the following order. The rectifier will deliver current controlled power, which then charges the input capacitance of the load up to a voltage level close to the voltage of the battery. Then a reconnection to the battery with limited inrush current will be achieved thereby obtaining a practically transient free reconnection to the battery.
Patent TW-477132-B (TW)
Title: Inter-system handover-generic handover mechanisms
Inventor: WILLARS PER
IPC: H04L29/06
Filed: 2000-03-27
Granted: 2002-02-21
Abstract: A data mechanism is described for assisting third generational mobile radio systems to handoff mobile radio connection to neighboring cells when the neighboring cells are of a foreign generational type. The data mechanism includes a container in the data map which is a generic structure, not particula to any generational system. The generic structure can be content-specific to any of many different generational communications protocols.
Patent TW-451407-B (TW)
Title: Contact shape for giga scale borderless contacts and method for making the same
Inventor: RUPP THOMAS S
IPC: H01L27/108
Filed: 2000-06-12
Granted: 2001-08-21
Abstract: A borderless contact for giga-scale groundrule is widened perpendicular to the wordline direction (parallel to the MO metal line) resulting in improvements in all process steps. This is accomplished by making an otherwise square borderless contact structure into a rectangular structure. Process misalignments are mitigated, and contact resistance is lowered and kept uniform. The maximum allowable contact area is available even under misalignment configurations.
Patent TW-I228645-B (TW)
Title: Photoresist stripping method in lithographic process
Inventor: CHEN JR-JI
IPC: G03F7/42
Filed: 2000-04-28
Granted: 2005-03-01
Abstract: This invention is provided with a method for stripping a photoresist in a lithographic process. This method utilizes the following steps: using the prior art steps of wet removal of photoresist; additionally arranging an gas diffuse panel at the bottom of the photoresist stripping tank; putting a chip on the gas diffuse panel; guiding an air passing through the gas diffuse panel to form a plurality of air bubbles in the liquid type photoresist stripping agent so as to produce a disturbance effect and to obtain the result of stripping photoresist. This method can prevent the phenomenon of photoresist residues and metallic sidewall polymer which is easily happened in the prior art of wet photoresist stripping. This invention is characterized in that, without performing overflow steps, mechanical vibration or ultrasonic vibration, the photoresist stripping step can be achieved with no metal peeling phenomenon.
Patent TW-554172-B (TW)
Title: Semiconductor device test apparatus
Inventor: OKAMOTO YASUYUKI
IPC: G01R31/3183
Filed: 2000-06-26
Granted: 2003-09-21
Abstract: Semiconductor device test apparatus tests a semiconductor device at a frequency exceeding the maximum frequency of the hardware of the semiconductor device test apparatus. Two timing pulses are produced so as to correspond to the respective operation cycle of the semiconductor device test apparatus, at a predetermined period n2, which is shorter than one-half of the minimum cycle ""n"" corresponding to the lower limit of the operation cycle. The timing -at which the first timing pulse corresponding to each of the operation cycles is produced- is qradually shifted from the end point to the start point of the operation cycle, such that the interval between the second timing pulse corresponding to the respective operation cycle and the first timing pulse corresponding to the next operation cycles becomes equal to the predetermined interval n2. Signals c1 to c5 formed as a result of the shift are combined into a signal C1 output from the semiconductor device test apparatus.
Patent TW-455986-B (TW)
Title: A method and apparatus for etching carbon-doped organic silicate glass
Inventor: NI TUQUIANG
IPC: H01L21/311
Filed: 2000-09-21
Granted: 2001-09-21
Abstract: A method for etching a carbon-doped organic silicate glass (OSG) insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with a carbon-doped OSG insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a high selectivity gas. The high selectivity gas is preferably either a bromine containing gases, or a chlorine containing gases, or both. The ratio of oxidizing gas to high selectivity gas is preferably no less than 4:1. In addition, an inert carrier gas may be also be provided. The plasma is then used to etch the organic silicate glass insulating layer through the mask layer, thereby forming a via in the organic silicate glass insulating layer wherein an underlying silicon nitride barrier layer remains essentially intact.
Patent TW-461160-B (TW)
Title: Pin header and its manufacturing method
Inventor: HORIUCHI HIDEAKI
IPC: H01R12/57
Filed: 2000-08-10
Granted: 2001-10-21
Abstract: The object of the present invention is to provide a pin header adaptable to its thinning and to provide its manufacturing method by reducing the deviation of an upper-stage contact and the warpage of a housing as a whole during insert-molding, by improving flatness accuracy and by enhancing the wrenching strength of a fitting part. A plurality of pin contact points 12 (12A, 12B) are arranged as an upper section and a lower section on a rectangular insulating housing case 13, and insert-molded to form a penetrating state. The pin contact point 12 is composed of a fitting part 14 horizontally projecting from the front face of the housing case 13, a leg part 15 (15A, 15B) bent at a nearly right angle and extending downward from the rear end of the fitting part 14. A flat part 16 is horizontally extended by bending the lower end part of the leg part outward at a nearly right angle and surface-mounted to a printed circuit board, so as to form the pin header. In each of the pin contact points 12A arranged on the upper section with respect to the housing case 13 within the pin contact points 12, a bent leg part 19 extending by being bent outward at a nearly right angle from the leg part 15A and extending by being bent downward at a nearly right angle is formed between the leg part 15A and the flat part 16. The leg parts 15A of the upper-section contact points12A are embedded in the housing case 13 by insert-molding, and the bent leg parts 19 are projected toward the rear side of the housing case 13 along with the flat parts 16.
Patent TW-464966-B (TW)
Title: Semiconductor wafer clean method to prevent corrosion of metal silicide layer
Inventor: CHANG CHING-YU
IPC: H01L21/321
Filed: 2000-08-17
Granted: 2001-11-21
Abstract: This invention provides a method to remove micro particle residue on a semiconductor wafer and the cleaning method to prevent corrosion of silicide layer on the semiconductor wafer surface. Firstly, the temperature of the semiconductor wafer has to be controlled to maintain the temperature of the semiconductor wafer between room temperature and 45 DEG C. A cleaning solution of temperature between room temperature and 45 DEG C is utilized to wash the wafer so that the residual micro particles on the wafer surface can be effectively removed, and corrosion of the metal silicide layer by the cleaning solution can be prevented. The cleaning solution contains a predetermined volumetric composition of ammonia, hydrogen peroxide and deionized water.
Patent TW-461115-B (TW)
Title: Semiconductor device and the method for making the same
Inventor: TANIGUCHI TOSHIMITSU
IPC: H01L29/10
Filed: 2000-09-13
Granted: 2001-10-21
Abstract: A semiconductor device is characterized that it comprises: a gate electrode 27F, formed on a P-type well 3 via a gate oxide film 9; an N-type high-concentration source, drain layers 15 formed separately from the foregoing gate electrode 27F; and N-type low-concentration source, drain layers 10, which are formed in such a way as to encircle the foregoing source, drain layers 15 and are divided into two by a P-type body layer 18 formed under the lower part of the foregoing electrode 27F.
Patent TW-I228179-B (TW)
Title: Process and device for producing photonic crystal, and optical element
Inventor: ICHIMURA KOUICHI
IPC: G02B6/122
Filed: 2000-09-19
Granted: 2005-02-21
Abstract: There is provided a process for producing an optical element comprising a photonic crystal in which spots having different indices are arranged periodically, comprising the step of exposing an optical medium whose refractive index changes by irradiation of light or by a predetermined treatment conducted after the irradiation of light according to the intensity of the applied light to a field where light intensity changes in space at a period of the wavelength order of light and holding the optical medium for a given time, and the step of repeating at least once the step of creating another field where light intensity changes in space at a period of the wavelength order of light by shifting the optical medium. Further, by using a plurality of optical media whose refractive indices change by an external field, the refractive indices of certain two media out of these optical media are caused to be the same or about the same under a certain external field condition. By reflecting the distribution patterns that light senses under these two conditions on a desired crystal structure, shape of a lattice point and period, there can be provided an optical element and an optical demultiplexer that are capable of dynamically switching between two significantly different photonic structures by switching the external field conditions.
Patent TW-447125-B (TW)
Title: Method of fabricating silicon-on-insulator device
Inventor: LIOU JR-JENG
IPC: H01L27/12
Filed: 2000-10-13
Granted: 2001-07-21
Abstract: The present invention discloses a method of fabricating silicon-on-insulator device with a short channel, wherein a dielectric layer for the mask, an implanted oxygen process and a heating process are used to form a dioxide layer on the substrate of silicon-on-insulator device before forming gate on the silicon-on-insulator device. i.e. the junction depth of channel is decreased. At first, provide the substrate of silicon-on-insulator device, which includes at least a silicon layer and an insulation layer. Then, deposit a dielectric layer on the silicon layer. Furthermore, transfer the pattern of gate region to the dielectric layer to form a trench and expose the silicon layer. Next, implant oxygen to the silicon layer and heat the substrate of silicon-on-insulator device to form a silicon dioxide layer in the silicon layer. Then, fill the trench with a conductive layer. Furthermore, transfer the pattern of a gate to the conductive layer to form a gate. In addition, form a lightly-doped drain structure in the silicon layer. Also, remove the dielectric layer. Finally, sequentially form two spacers neighboring both sidewalls of the gate, and the source and drain in the silicon layer tightly.
Patent TW-577962-B (TW)
Title: Fixing method for bearing component of cylinder body, fixing structure for bearing component of cyclinder body, electronic photographic sensor provided with bearing component, print cartridge and image-forming apparatus
Inventor: SHIBATA JUNICHI
IPC: F16C35/063
Filed: 2000-11-28
Granted: 2004-03-01
Abstract: Provided is a fixing method and a fixing structure for the bearing component of cylinder body, a print cartridge, and an image-forming apparatus which improve the contact precision of the cylinder body and the like of an electronic photographic sensor. By the elastically diameter-expanding action of a first insert 16 and a second insert 20 during they are inserted from the end portions of the cylinder body 10 into the cylinder body 10 is expanded in the radius direction, so that cylinder body 10 is in combination with the bearing components 12 and 14 disposed on the outer peripheral surface of the cylinder body 10. The first insert 15 is inserted into the second insert 18, and the third insert 20 is inserted into the fourth insert 22.
Patent TW-494370-B (TW)
Title: Method for controlling stream of electron in cold cathode fluorescent tube lamp and method for driving cold cathode fluorescent type illumination device using the same and driving device for performing the same and liquid crystal display device
Inventor: HWANG IN-SUN
IPC: G02F1/133
Filed: 2001-03-27
Granted: 2002-07-11
Abstract: There are disclosed a CCFT type illumination device having low driving voltage and low power consumption characteristics, a driving method of the illumination device and an LCD adopting the driving method and the illumination device. A first driving voltage having a first polarity is applied between a first electrode and a second electrode facing with the first electrode for a first time such that a potential difference is generated between the first electrode and the second electrode. The polarity of the first and second electrodes is inverted within an electron annihilation time when electrons within the tube of the lamp move from the first electrode to the second electrode by the generated potential difference are annihilated. A second driving voltage having a second polarity having an opposite polarity to the first polarity is applied between the first electrode and the second electrode for a second time.
Patent TW-544693-B (TW)
Title: Composite sheet, its composition, process for producing the same, and its use
Inventor: HARA TAKEO
IPC: C08F2/46
Filed: 2001-04-10
Granted: 2003-08-01
Abstract: The first invention is directed to a composite sheet of given thickness in semi-cured form, comprising a semi-cured binder (B1) and, incorporated therein, a magnetic fibrous filler (A), and said semi-cured binder (B1) comprising a thermosetting component and a component resulting from curing of a photocuring component, the magnetic fibrous filler (A) orientated in the direction of the thickness of the semi-cured composite sheet. The second invention is directed to a composite sheet of given thickness comprising a binder and a magnetic fibrous filler (A), the magnetic fibrous filler (A) orientated in the binder in the direction of the thickness of the composite sheet, the orientated magnetic fibrous filler (A) constituting a plurality of bundles. The third invention is directed to a composite sheet of given thickness comprising a binder and a magnetic fibrous filler (A), the magnetic fibrous filler (A) orientated in the binder in the direction of the thickness of the composite sheet, the composite sheet having projections on at least one side thereof. The fourth invention is directed to a composite sheet of given thickness comprising a magnetic fibrous filler (A), a binder cured by heating and/or light irradiation, and organic fine particles or inorganic fine particles (C), the magnetic fibrous filler (A) orientated in the direction of the thickness of the composite sheet. The fifth invention is directed to a composite sheet of given thickness to be interposed between a semiconductor element and a circuit substrate, comprising a magnetic fibrous filler (A) orientated in the direction of the thickness of the composite sheet, at least 80% of the, magnetic fibrous filler (A) having a fiber length L1 satisfying the relationship: 0.5xD < L1 < (L2<2>+D<2>)<1/2> (I), wherein L1 represents a fiber length of magnetic fibrous filler (A), D represents a thickness of composite sheet, and L2 represents a minimum distance between neighboring electrodes among neighboring electrode distance with respect to electrodes arranged on a semiconductor element on its composite sheet side or neighboring-electrode distance with respect to electrodes arranged on a circuit substrate on its composite sheet side.
Patent TW-506869-B (TW)
Title: Method for preparing metal powder
Inventor: AKIMOTO YUJI
IPC: H01L23/498
Filed: 2001-04-30
Granted: 2002-10-21
Abstract: A method for preparing a highly crystallized metal powder, comprising: supplying at least one heat-decomposable metal compound powder into a reaction vessel using a carrier gas; and forming a metal powder by heating the metal compound powder in a state in which the metal compound powder is dispersed in a gas phase at a concentration of no more than 10 g/liter, at a temperature that is over the decomposition temperature of the metal compound powder and at least (Tm-200) DEG C when the melting point of the metal contained in the metal compound powder is Tm DEG C. The method provides a high-purity, high-density, highly dispersible, fine, highly crystallized metal powder consisting of spherical particles of uniform size, which is suited to use in thick film pastes, and particularly conductor pastes and the like used in the preparation of multilayer ceramic electronic parts.