Patent DE-102013011388-A1 (DE)
Title: Three-dimensional planar magnetic sensor, useful in satellite navigation system, comprises three magnetic sensor, and switching circuit electrically connected with magnetic sensors to provided current or voltage to magnetic sensors
Inventor: YUAN FU-TE
IPC: G01C17/02
Filed: 2013-07-09
Abstract: The three-dimensional planar magnetic sensor (1) comprises: a first magnetic sensor (10) configured to measure an external magnetic field of a first direction component; a second magnetic sensor (20) configured to measure an external magnetic field of a second direction component; a third magnetic sensor (30) comprising a third fixed layer, a third magnet insulation layer and a third idle layer; and a switching circuit (40) electrically connected with the first, second and third magnetic sensors to provided a current or a voltage to the first, second and third magnetic sensors. The three-dimensional planar magnetic sensor (1) comprises: a first magnetic sensor (10) configured to measure an external magnetic field of a first direction component; a second magnetic sensor (20) configured to measure an external magnetic field of a second direction component, where a second direction is vertical to the first direction; a third magnetic sensor (30) comprising a third fixed layer, a third magnet insulation layer and a third idle layer, where the third idle layer is formed as a top layer, the third magnet insulation layer is formed between the third fixed layer and the third idle layer and between the top layer and the third fixed layer, a magnetization direction of the third fixed layer is along a third direction or 180[deg] opposite to the third direction, the third direction is vertical to the first direction and the second direction, while a direction of magnetization of the third idle layer is in the first direction and the second direction or inclined to the third direction at 0-180[deg] , a magneto-resistance is an intermediate value in the direction of magnetization of the third idle layer, and the magneto-resistance is varied if the external magnetic field is interfered; and a switching circuit (40) electrically connected with the first magnetic sensor, the second magnetic sensor and the third magnetic sensor to provided a current or a voltage to the first magnetic sensor, the second magnetic sensor and the third magnetic sensor, where the first, second and third magnetic sensors are arranged on a same plane. The direction of magnetization of the third fixed layer is on the third magnet insulation layer and into the third direction. The magnetization direction of the third fixed layer under the third magnetic insulation layer is 180[deg] opposite to the third direction. The first magnetic sensor includes a first fixed layer, a first magnet insulation layer and a first idle layer. The first idle layer is arranged as a top layer. The first magnet insulation layer is arranged between the first fixed layer and the first idle layer and between the top layer and the first fixed layer. A direction of magnetization of the first fixed layer is along the first direction or 180[deg] opposite to the first direction, while a direction of magnetization the first idle layer is in the first direction, and a magneto-resistance is a minimum value in the first idle layer along the first direction. The magneto-resistance is increased if the external magnetic field is interfered. The second magnetic sensor comprises a second fixed layer, a second magnet insulation layer and a second idle layer. The second idle layer is arranged as the top layer. The second magnet insulation layer is arranged between the second fixed layer and the second idle layer and between the top layer and the second fixed layer. A direction of magnetization of the second fixed layer is along the second direction or 180[deg] opposite to the second direction, while a direction of magnetization of the second idle layer is along the second direction, and a magneto resistance is a minimum value in the second idle layer along the second direction. The magneto-resistance is increased if the external magnetic field is interfered. The direction of magnetization of the first fixed layer is on the first magnet insulation layer and into the first direction. The direction of magnetization of the first fixed layer under the first magnet insulation layer is 180[deg] opposite to the first direction. The direction of magnetization of the second fixed layer is on the second magnet insulation layer and into the second direction. The direction of magnetization of the second fixed layer under the second magnet insulation layer is 180[deg] opposite to the second direction. A change in the magneto-resistance in the first, second and third magnetic sensors is measured by the switching circuit.