Patent SG-11201807260R-A (SG)
Title: Memory device and method of forming the same
Inventor: HE WEI
IPC: H01L45/00
Filed: 2017-03-14
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization IIIM1411011101010111110101111101110111100110101110100111110111011# International Bureau .. .... ..Yejd ..... .....!;,,, (10) International Publication Number (43) International Publication Date WO 2017/160233 Al 21 September 2017 (21.09.2017) WIP0 I PCT (51) International Patent Classification: Fusionopolis Way, #08-01 DSI, Innovis, Singapore H01L 45/00 (2006.01) HO1L 27/24 (2006.01) 138634 (SG). (21) International Application Number: (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; PCT/SG2017/050125 P.O. Box 1088, Rochor Post Office, Rochor Road, Singa- (22) International Filing Date: pore 911833 (SG). 14 March 2017 (14.03.2017) (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, (25) Filing Language: English AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (26) Publication Language: English BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (30) Priority Data: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, 10201601973Q 15 March 2016 (15.03.2016) SG KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20- NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, 10, Connexis North Tower, Singapore 138632 (SG). RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (72) Inventors: HE, Wei; c/o Data Storage Institute, 2 Fusiono- ZA, ZM, ZW. polis Way, #08-01 DSI, Innovis, Singapore 138634 (SG). ERNULT, Franck Gerard; c/o Data Storage Institute, 2 (84) Designated States (unless otherwise indicated, for every Fusionopolis Way, #08-01 DSI, Innovis, Singapore kind of regional protection available): ARIPO (BW, GH, 138634 (SG). CHUA, Eng Keong; c/o Data Storage Insti- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, = tute, 2 Fusionopolis Way, #08-01 DSI, Innovis, Singapore TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, 138634 (SG). JIANG, Yu; c/o Data Storage Institute, 2 TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, [Continued on next page] = (54) Title: MEMORY DEVICE AND METHOD OF FORMING THE SAME = (57) : Embodiments provide a memory device, in- = = /10 cluding a plurality of insulating layers and a plurality of later- al layer arrangements. The lateral layer arrangements and the = insulating layers are arranged alternately on each other such —_ that each lateral layer arrangement is sandwiched between = neighboring insulating layers. Each lateral layer arrangement 320 includes a first electrode layer, a second electrode layer, and a 330 = —10.- e T en th he m m e el l e e t a c y r r a od e nd lay th e e r m m an e d t z i e fi r o s iy t lIt11(11,1,t11,11illt II lirlIttlr s l e a r co y e san n d el d e w ctr ic o h d e e d la b y e e tw r. = , : , , second electrode layer are arranged at a lateral side of the first electrode layer. The memory device further include a selecting = = . 4 .„--- 250 film arranged at a lateral side of the insulating layers and the = lateral layer arrangements and extending in a direction at least substantially perpendicular to a lateral direction of the lateral layer arrangements, wherein the selecting film has a first sur- face in contact with the second electrode layer of each lateral layer arrangement. The memory device further include a third 200 electrode layer arranged in contact with a second surface of = . 100 the selecting film, the second surface being opposite to the first surface. 1-1 . , M 300 310 312 220 210 M ei © ,-1 Fig. 1 IN 1-1 0 ei O WO 2017/160233 Al MIDEDIMOHNIIMMEDEHENIMIDERVOIMIE DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, Published: LU, LV, MC, MK, MT, SI, SK, SM, TR), OAPI GN, GQ, GW, KM, ML, NL, (BF, MR, NE, NO, BJ, PL, PT, RO, RS, CF, CG, CI, CM, SN, TD, TG). SE, GA, with international search 21(3)) report (Art.