Patent SG-11201909899S-A (SG)
Title: Arrays of elevationally-extending strings of memory cells and methods of forming memory arrays
Inventor: SANDHU GURTEJ
IPC: H01L27/11573
Filed: 2018-04-02
Abstract: FIG. 1 49 49 5 O O 00 O O (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 01 November 2018 (01.11.2018) WIPO I PCT omitia °nolo Hillis n ono oimIE (10) International Publication Number WO 2018/200133 Al (51) International Patent Classification: HOlL 27/11556 (2017.01) HOlL 27/11582 (2017.01) HOlL 27/11524 (2017.01) HOlL 27/1157 (2017.01) HOlL 27/11529 (2017.01) HOlL 27/11573 (2017.01) (21) International Application Number: PCT/US2018/025716 (22) International Filing Date: 02 April 2018 (02.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/581,762 28 April 2017 (28.04.2017) US (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way, Boise, ID 83716 (US). (72) Inventors: SANDHU, Gurtej, S.; 2964 East Parkriver Drive, Boise, ID 83706 (US). HILL, Richard, J.; 636 N. Morningside Way, Boise, ID 83712 (US). SMYTHE, John, A.; 4546 S. Riva Ridge Way, Boise, ID 83709 (US). (74) Agent: MATKIN, Mark, S. et al.; Wells St. John P.S., 601 W. Main Avenue, Suite 600, Spokane, WA 99201 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (54) Title: ARRAYS OF ELEVATIONALLY-EXTENDING STRINGS OF MEMORY CELLS AND METHODS OF FORMING MEMORY ARRAYS (57) : An array of elevationally-extending strings of memory cells comprises a vertical stack of alternating insulative levels and wordline levels. The wordline levels have terminal ends corresponding to control-gate regions. Charge-storage material of individ- ual memory cells extend elevationally along individual of the control-gate regions of the wordline levels and do not extend elevation- ally along the insulative levels. A charge-blocking region of the individual memory cells extends elevationally along the individual control-gate regions of the wordline levels laterally through which charge migration between the individual control-gate regions and the charge-storage material is blocked. Channel material extends elevationally along the stack and is laterally spaced from the charge- storage material by insulative charge-passage material. All of the charge- storage material of individual of the elevationally-extending strings of memory cells is laterally outward of all of the insulative charge-passage material of the individual elevationally-extending strings of memory cells. Other embodiments, including method embodiments, are disclosed. [Continued on next page] WO 2018/200133 Al MIDEDIMOMOIDEIRDERIHIMINIMIIIIMOVOIMIE (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))