baber/WOPTO huggingface dataset:
Patent JP-H11307544-A (JP)
Title: Bipolar transistor and semiconductor integrated circuit device
Inventor: SAITO NAOTO
IPC: H01L29/73
Filed: 1998-05-27
Abstract: PROBLEM TO BE SOLVED: To stabilize characteristics of little dispersion with a simple process at a low cost by forming each region to self-align by introducing impurities using a patterned polycrystalline silicon layer as a mask. SOLUTION: A base region 7, a base electrode region 6 and an emitter region 5 are formed below a silicon oxide film 11. A first polycrystalline silicon layer 1 used as a mask during introduction of impurities is arranged on the silicon oxide film 11 excepting on the base electrode region 6 and the emitter region 5. The first polycrystalline silicon layer 1 covers an entire of a base region excepting on the emitter region 5 and the base electrode region 6, and a part thereof is laid on the field oxide film 9. The base electrode region 6 and the emitter region 5 can be formed to self-align in this way, and a device which has accurately controlled performance even if a size is fine can be prepared stably.
Patent JP-2000340514-A (JP)
Title: High-temperature heat treatment quartz wafer boat
Inventor: AMANO MASAMI
IPC: H01L21/683
Filed: 1999-05-26
Abstract: PROBLEM TO BE SOLVED: To provide a quartz wafer boat which has a long service life and two supports which are located nearest to a wafer insertion side, restrained from being deformed, and lessened in heat capacity so as to restrain wafers from slipping off. SOLUTION: A quartz glass vertical wafer boat is composed of at least three supports 10, 12, and 14, a top board 16 which fixes the upper ends of the supports 10, 12, and 14, and a bottom board 18, where grooves are provided to the supports 10, 12, and 14 for mounting wafers, and the two supports 10 and 12 located nearest a wafer insertion side, are formed rectangular in cross section. The sectional long sides of the supports 10 and 12 are set in parallel with the insertion direction A of wafers or set at an acute angle of 45 deg. or smaller with respect to the direction A of insertion, and furthermore the support 14 located farthest from a wafer insertion side except two supports 10, 12 among three supports 10, 12 and 14 is formed circular in cross section.
Patent JP-H071948-A (JP)
Title: Air-conditioning device for vehicle
Inventor: SUZUKI TOSHIFUMI
IPC: B60H1/00
Filed: 1993-06-17
Abstract: PURPOSE:To even the temperature inside a vehicle room, and to eliminate the cold at the feet of occupants by providing a ventilating passage that has ventilating ports at both the upper and lower ends respectively, to the inside surface part on the side part of the vehicle room, and also by providing a fan whose blowing-out direction has been made variable, inside the ventilating passage. CONSTITUTION:In a center pillar 4 in which a closed section is formed both by a pillar outer 41 and by a pillar inner 42, a gutter-shaped pillar trim 16 is fitted on the inside of the pillar inner 42 so as to cover the pillar inner 42 from the vehicle room side. Between the pillar trim 16 and the pillar inner 42, a gutter-shaped duct 15 is arranged, and a ventilating passage 17 of a rectangular shape continuing from the side sill 2 side to the roof rail 3 side is locked by both the pillar rim 16 and the duct 15. The lower end of the ventilating passage 17 is faced to the lower space of the vehicle room 13 via a lower end ventilating passage 19, while the upper end of the ventilating passage 17 is faced to the upper space of the vehicle room 13 via an upper ventilating port 20; and a normally or reversely rotatable fan 18 is installed so as to be positioned inside the ventilating passage 17 for circulating air.
Patent JP-S6126700-A (JP)
Inventor: MIZUTANI OSAMU
IPC: B60S1/46
Filed: 1984-07-13
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0439969-A (JP)
Title: Manufacture of semiconductor pressure sensor
Inventor: KONDO YUJI
IPC: H01L29/84
Filed: 1990-06-05
Abstract: PURPOSE:To provide a semiconductor pressure sensor having a diaphragm with uniform thickness by forming interchip isolation layers on a wafer, and subjecting the wafer to self-ending etching. CONSTITUTION:N-type epitaxial layers 2 and interchip isolation layers 3 are formed on a p-type substrate 1. A diffused n<+> electrode 6 is formed in the periphery of the wafer 9, and a diffused + electrode 5 is formed on each chip 10. After a passivation film 7 is provided, a conductive film 8 for connecting the electrodes 5 with the electrode 6 is formed and it is connected to the positive electrode of an external power source. The reverse side of the substrate is subjected to self-ending etching to remove the other areas than masked by an oxide film 11, so that thin-film diaphragms 4 are formed. Then, the surface of the wafer 9 is etched to remove the conductive film 8. The wafer is cut into chips, and each is packaged to assemble a semiconductor pressure sensor. The sensors thus provided have less variation in sensitivity.
Patent JP-H09300397-A (JP)
Title: Acrylic insert film and manufacture of grain pattern molded product
Inventor: MORI FUJIO
IPC: B32B33/00
Filed: 1996-05-15
Abstract: PROBLEM TO BE SOLVED: To anable employment of a molded resin having various hues by forming at least a printing layer consisting of a grain conduit pattern layer, a substrate layer and a color layer on the signal surface of a transparent acrylic film and setting the colors of the substrate layer and the color layer of the pringing layer to a same system color. SOLUTION: An acrylic insert film 1 is obtained by forming a printing layer consisting of at least a grain conduit pattern layer 3, a substrate layer 4 and a color layer 6 and the colors of the substrate layer 4 and color layer 6 of the printing layer are set to the same system color. That is, since the color layer 6 having the same system color as the substrate layer 4 is provided under the substrate layer 4 of the acrylic insert film 1, even if there is a part extremely stretched by insert molding, a molding resin is not seen through and the design of the pattern molded product is not affected by the color of the molding resin. Therefore, the hue itself of the acrylic insert film 1 becomes that of the grain patterns of the grain pattern molded product.
Patent JP-S5847394-A (JP)
Title: Malfunction preventing circuit
Inventor: HAMADA YUUJI
IPC: H04Q1/20
Filed: 1981-09-17
Abstract: PURPOSE:To prevent malfunction occurring when a relay circuit for loop monitoring is connected by charging and discharging the capacitor of a call signal detecting circuit to the same potential between lines of the relay circuit for loop monitoring. CONSTITUTION:A relay RAA operates when a relay RA is in operation to connect lines to the sides of resistances R3 and R4. When a relay TM is in operation and the relay RA is released, charges in the capacitor C3 of the call signal detecting circuit of a COT are absorbed by a power source -48V through resistances R3 and R4. Therefore, the potential difference between both contacts raa1 and raa2 at both ends of a malfunction preventing circuit encircled with a broken line is equal to the potential difference across the capacitor C3. Then when the relay RA is released to release the relay RAA, the malfunction preventing circuit is disconnected to connect a loop monitoring relay A to the line. The resistance of both windings of a relay A is equal to the resistances R3 and R4. Therefore, neither charging nor discharging current due to the charges of the capacitor C3 is generated by the connection of the relay A, which never malfunctions.
Patent JP-H0628634-A (JP)
Title: Method for grinding magnetic head core forming material
Inventor: OGAWA HIROSHI
IPC: G11B5/23
Filed: 1992-05-12
Abstract: PURPOSE:To accurately identify a residual grinding quantity by measuring a dimension between two edges of a marking body exposed on a grinding surface when the magnetic head forming material is ground. CONSTITUTION:By measuring a dimension X1 between the outside edge 42 of the first straight line part 38a of first marking bodies 32a and 32b and the inside edge part 44 of a second straight line part 38b, a distance up to a grinding target line x-x is calculated. Since the first and second straight lines 38a and 38b are formed as two sides of a regular triangle, a dimension is b=h and when the width (c) of the second straight line 38b is 10mum, a distance Y1 from a grinding surface to the grinding target line x-x is Y1=X1-10mum. Thus, the grinding target line Y1 is calculated by measuring the dimension X1 between the outside edge part 42 of the straight line part 38a and the inside edge part 44 of the straight line part 38b. Therefore, the measuring of the residual grinding quantity, and further the setting of the gap depth length are carried out highly accurately.
Patent JP-S5479665-A (JP)
Title: Switch device of electronic watches
Inventor: TAKASHINA NAOKI
IPC: G04C3/00
Filed: 1977-12-07
Abstract: PURPOSE:To enable selection operation to be readily performed by electrically connecting a plurality of conductive parts provided at a specific spacing on a substate and other single conductive part by rotating operation. CONSTITUTION:A rotating rotor 3 is mounted to a substrate 7 which is provided with the conductive parts 2a thru 2d connected from four pads of an IC and a single conductive part 6 and a switch 1 having contacts la thru lq on the outside circumferential part is fixed to the rotating rotor 3. By rotating this switch 1, selective connection of 15 ways is made possible.
Patent JP-H022681-A (JP)
Title: Manufacture of semiconductor element
Inventor: AJIOKA TSUNEO
IPC: H01L29/78
Filed: 1988-06-16
Abstract: PURPOSE:To smoothen a buried gate oxide film and to improve dielectric strength, by forming side walls of an amorphous semiconductor on the side walls of a groove before performing gate oxidation. CONSTITUTION:A diffused layer 2 of a second conductivity type for providing source and drain regions is formed on the surface of a semiconductor substrate 1 of a first conductivity type. A groove 10 is formed in the gate electrode forming region on the surface of the semiconductor substrate 1 such that the groove 10 reaches the bottom of the diffused layer 2. Then, an amorphous semiconductor layer 11 of the same material as the principal component of the semiconductor substrate 1 is formed on the surface of the semiconductor substrate 1 including the groove 10. The amorphous semiconductor is etched to provide side walls 11a on the inner walls of the groove 10. The side walls 11a are heat treated to produce single crystals while, simultaneously, a dopant is introduced to produce side walls of the second conductivity type. The surface including these side walls is oxidized to produce a gate insulating film 6, and a gate electrode 7 consisting of a polycrystalline semiconductor of the second conductivity type is formed in the gate electrode forming region.
Patent JP-S5572753-A (JP)
Title: Gas bath furnace
Inventor: IRIE TAKESHI
IPC: F24H9/00
Filed: 1978-11-27
Abstract: PURPOSE: To prevent water temperature in a bathtub from falling down by providing a check valve in the circulating pipe of a heat exchanger for the bath furnace.  
     CONSTITUTION: A sluice valve 8 is arranged between an upper and a lower circulating pipe 6, 7 in the middle of a heat exchanger 2 for the bathtub furnace and a bathtub 9 and is connected with a gas pressure reactor 10. If a pilot burner is ignited by an ignition knob 17 and it is allowed to turn up to a main burner position, the main burner 3 begins to fire, the gas pressure reactor 10 operates by supplied gas pressure to the main burner 3, the sluice valve 8 opens, the temperature of the water in the bathtub 9 rises by means of natural convection of the water in the bath furnace. Then, if the main burner 3 is extinguished, the suppled gas pressure disappears, the sluice valve 8 is closed, the natural convection is stopped, radiation of heat from the bathtub heat exchanger 2 is arrested and the water temperature of the bathtub 9 is prevented from falling. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S5585594-A (JP)
Title: Cephem compound and their preparation
Inventor: TAKATANI TAKAO
IPC: C07D501/22
Filed: 1979-11-12
Abstract: NEW MATERIAL:Cephem compounds of formula I (R 1  is amino; R 2  is nitrile, hydroxyl, lower alkyl, etc.; R 3  is lower alkyl, etc.; R 4  is carboxyl, etc.; where when R 2  is a lower alkyl substituted with nitrile, R 3  is not lower alkanoyloxymethyl).  
     EXAMPLE: 7-[ 2-( 2-Aminothiazol-4-yl )-2-cyanomethyliminoacetoamide ]cephalosporanic acid (syn-isomer).  
     USE: Antibiotic, they have antibiotic activity against a wide range of bacteria from gram-positive to gram-negative ones.  
     PREPARATION: The reaction of a reactive derivative of a compound of formula II in the amino group as isocyanate, with another reactive derivative of compound of formula III in the carboxyl group as acid halide is carried out in a solvent as acetone or tetrahydrofuran usually under cooling or heating to give title compound of formula I. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-H11339097-A (JP)
Title: Automatic transaction device
Inventor: TSUJIYAMA YUJI
IPC: A61L9/12
Filed: 1998-05-28
Abstract: PROBLEM TO BE SOLVED: To prevent a customer from feeling unpleasant with a bad smell. SOLUTION: A perfume emission part 10 is fitted inside a perfume emission hole provided in the front of the housing 9 of an automatic transaction device to naturally emit a perfume. A paper money receiving and paying machine 4 and a coin receiving and paying machine 5 are provided with perfume atomizers 11 and 12 to atomize a perfume to paper moneys and coins which are so discriminated by a discrimination part that they can be paid when the paper moneys and coins are paid.
Patent JP-S6037982-A (JP)
Title: Production of protease
Inventor: TOMOHIRO SUSUMU
IPC: C12R1/425
Filed: 1983-08-11
Abstract: PURPOSE:To produce a protease economically in an industrial scale, by culturing a microbial strain belonging to Serratia genus and having ampicillin resistance and chloramphenicol sensitivity. CONSTITUTION:Microbial strain belonging to Serratia genus, resistant to cell wall synthesis inhibitor, sensitive to protein synthesis inhibitor, and capable of producing a protease, e.g. Serratia sp MT-5-40 (FERM-P No.7183), is cultured aerobically at 5-8pH and 20-35 deg.C for about 2 days, and the objective protease is collected from the culture liquid.
Patent JP-S5481476-A (JP)
Title: Contact change order analytic system
Inventor: KITAHARA TOSHIMASA
IPC: G05B23/02
Filed: 1977-12-09
Abstract: PURPOSE: To improve resolving power of order analysis by confirming contact changes which are tentatively memorized by signals passed through a filter with short time constant by a filter with long time constant in a settled time.  
     CONSTITUTION: Changes of a plant condition change detecting contact 1 come through a filter 10 into a change detecting circuit 3, which are memorized by a flip flop circuit 4 and step into a processing unit 9 as interruption signals. The processing unit 9 takes data signal 11 in by the interruption signals, whose condition and time are memorized. After the lapse of a settled time, outputs 7 from the processing unit 9 and a filter 2 are taken in, which are compared with the condition of the data signal 11 taken in before, and in case where the conditions are same, such a change is considered to be appropriate, which is used as order analytic data. Whereas in case where the conditions differ to each other, such a change is discriminated as being attributed to noise, etc., the analytic data has to be disregarded. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H08336377-A (JP)
Title: Gas fluidized bed roaster
Inventor: YAMAMOTO TATSUO
IPC: A47J27/04
Filed: 1995-06-14
Abstract: PURPOSE: To provide a gas fluidized bed roaster capable of adopting a simple structure as the sealing structure of a roasting chamber and excellently carrying out a relatively high-temperature roasting, for example, roasting by using wheat as a target. CONSTITUTION: This gas fluidized bed roaster of a gas circulation type is equipped with a roasting chamber 2 capable of roasting a material 3 to be roasted in a fluidized state with roasting hot air and by a hot air supplying mechanism 4 for sending the roasting hot air to the roasting chamber 2 and returns a part of an exhaust gas discharged from the roasting chamber 2 through a return route 5 to the hot air supplying mechanism 4 and uses it as a part of the roasting hot air.  The gas fluidized roaster is furnished with a position changing mechanism 30 capable of changing the roasting chamber 2 from a roasting position in which an exhaust gas outlet 8 of the roasting chamber 2 is connected to the return route 5 to an opening position in which the exhaust gas outlet 8 of the roasting chamber 2 is opened to a space of the outside and the material 3 to be roasted can be taken in and out from the exhaust gas outlet 8.
Patent JP-S5950272-A (JP)
Inventor: HAARII BAUAUZUFUERUDO
IPC: F16J9/12
Filed: 1983-08-11
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5939218-A (JP)
Inventor: YOSHIDA NOBUMASA
IPC: A01F12/32
Filed: 1982-08-25
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5949274-A (JP)
Inventor: OOGASUTO RUISU RUSHIAN PERUERU
IPC: C09D5/44
Filed: 1983-08-13
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H08336575-A (JP)
Title: Deodorant
Inventor: SEKINE YOSHIKA
IPC: A61L9/01
Filed: 1995-06-14
Abstract: PURPOSE: To provide a molded porous deodorant which integrally contains any of manganese oxide and/or copper oxide as well as active carbon and has a high deodorant efficiency and a long deodorization life. CONSTITUTION: This porous deodorant is obtd. by taking total 100 pts.wt. of 90 to 10 pts.wt. particles of the metal oxide and 10 to 90 pts.wt. particles of the active carbon, adding 10 to 80 pts.wt. particle of ultra-high mol.wt. polyethylene thereto, mixing both and compression molding the mixture at 130 to 200 deg.C and under a pressure of 490 to 2940Kpa. The deodorant exhibits the high deodorization effect to both of malodorous gases of a sulfur base and malodorous gases of a nitrogen base.
Patent JP-S63311498-A (JP)
Inventor: ARIMOTO YUKIRO
IPC: B65H1/30
Filed: 1987-06-12
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0441627-A (JP)
Title: Method for directly reducing and heating steel strip
Inventor: HAYASHI JUNICHI
IPC: C21D9/56
Filed: 1990-06-07
Abstract: PURPOSE:To stably obtain requisite reducing performance even when a burner is turned down at the time of incompletely burning a fuel in a specified air ratio and directly heating a steel strip by impressing a high voltage between a burner as the positive electrode and the steel strip as a negative electrode. CONSTITUTION:A burner panel 11 is provided to a direct-fired heating furnace 3, many non-oxidizing combustion burners (not shown in the figure) are fixed to the panel 11, and the positive electrode of a DC power source 15 is connected to the panel 11 and the negative electrode to a hearth roll 13. A steel strip S is directly heated in <=1.0 air ratio, and a high voltage is impressed between both electrodes. Consequently, the reducing performance of the combustion flame from the burner is enhanced, requisite reducing performance is stabilized even if the burner is turned down, and the high-quality steel strip S is obtained.
Patent JP-H0311725-A (JP)
Title: Processor of element to be processed
Inventor: MATSUMURA KIMIHARU
IPC: H01L21/3065
Filed: 1989-06-09
Abstract: PURPOSE:To make the even processing of a surface to be processed feasible by a method wherein the relative movement between a gas feeding member and an element to be processed in no contact with each other is made by driving means provided outside a reaction chamber using magnetic force. CONSTITUTION:A hot plate 3 loaded with a semiconductor wafer 2 as an element to be processed as well as a gas diffusion plate 4 as a gas feeding member opposed to the hot plate 3 are provided in a reaction chamber 1. Besides, actuating conductors e.g. permanent magnets 16, 17 are fixed on the sides of the gas diffusion plate 4 in the moving direction as shown by arrows. On the other hand, moving magnetic field generators 18, 19 are provided on the parts opposed to the permanent magnets 16, 17 outside the reaction chamber 1. Then, drive signals are fed to the moving magnetic field generators 18, 19 from a drive signal generator 20. Accordingly, the gas diffusion plate 4 is reciprocated by the said generators 18, 19 in arrow directions in the specific period so that the even processing of the surface to be processed may be made feasible.
Patent JP-S5574506-A (JP)
Title: Inclination correcting device of focusing type optical transmission body array
Inventor: HONDA MOTONOSUKE
IPC: G02B6/42
Filed: 1978-11-29
Abstract: PURPOSE: To perform efficient and highly accurate correction by assembling adust- screws and bolts to plate form bodies with flights.  
     CONSTITUTION: A plate-form member 7 which is composed of a suitable metal or plastic, has the length and width approximately the same as those of the side face of a focusing type optical transmission body array 2 and is formed with flights 8, 8 along the upper and lower bisectors on the front and back surfaces and flights 9, 9, 10, 10 lower than the flights 8 on the upper and lower edge parts is pierced with holes 11 at the right and left ends of its flights 8 and a suitable number of screw holes 12, 13 along the flights 9, 10, into which bolts 16, adjust screws 18, 19 are screwed. If with this arrangement the optical transmission array 12 is so fixed from both side faces that the lines of the directions bisecting its optical axis are sandwiched by the flights 8 of the plate-form members 7 followed by loosening one of the upper and lower adjust screws 18, 19 of the required positions and screwing down the other, then part of the optical transmission body array 2 is force-pressed at its top or bottom edge part by the screwed down adjust screws 18, 19 and is turned about the contact part with the flights 8, whereby the inclination in its thickness direction is corrected. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-H11339071-A (JP)
Title: System for automatic polygon generation from dot group
Inventor: MATSUOKA TSUKASA
IPC: G06T15/00
Filed: 1998-05-28
Abstract: PROBLEM TO BE SOLVED: To generate detailed polygon meshes from a group of unarrayed dots distributed on the surface of a body in phase structure obtained by taking measurements through a measuring instrument, etc. SOLUTION: The minimum surface density of the unarrayed dot group distributed on the surface of the body obtained by taking measurements through the measuring instrument, etc., is calculated, a voxel size is determined according to the minimum surface density to generate a volume model of the voxel size, and a grating point connecting method is implemented for it to generate basic meshes. Then surface properties for relating the surface of the obtained basic meshes to the dot group are found and polygon meshes having all the dots of the dot group as vertexes are made detailed through vertex dividing operation to generate polygon meshes.
Patent JP-H07198-A (JP)
Title: Method for preventing contamination with amplification product of nucleic acid amplification reaction
Inventor: TAKARADA YUTAKA
IPC: C12Q1/68
Filed: 1993-06-18
Abstract: PURPOSE:To prevent the contamination with an amplification product of a nucleic acid amplification reaction by including a process for breaking the 3'-terminal of an intruded pre-amplified product in the presence of a modified primer. CONSTITUTION:A reagent to break the 3'-terminal of an intruded pre-amplified product is added to a reaction liquid incorporated with a modified oligonuceotide. The 3'-terminal of the intruded pre-amplified product is broken by this process. An extension reaction is carried out by using the modified oligonucleotide as a primer to effect the amplification of a nucleic acid sequence. It is not necessary to use a particular nucleic acid for amplification or the phosphorylation of the primer.