baber/WOPTO huggingface dataset:
Patent TW-544539-B (TW)
Title: Liquid crystal display device and method for repairing breakage of circuit lines thereof
Inventor: HIRATA TOMOYA
IPC: G09F9/30
Filed: 2000-09-20
Granted: 2003-08-01
Abstract: In order to use an auxiliary wiring formed on one of opposing substrates as a bypass line of one of circuit lines arranged in matrix on the same substrate, which has a broken portion, cross points (A and B) of the auxiliary wiring 4 and the broken circuit line are electrically connected by removing the insulating film between the auxiliary wiring and the circuit line by irradiating these cross points with a laser beam. An electrostatic protective element is provided at each of cross points of the auxiliary wiring and the circuit lines and the auxiliary wiring is connected to a common terminal 13 connected to a reflective electrode formed on the other reflective substrate such that the potential of the auxiliary wiring can be removed.
Patent TW-476143-B (TW)
Title: Layout structure for integrated circuit, method and system for generating layout for CMOS circuit
Inventor: FUKUI MASAHIRO
IPC: G06F17/50
Filed: 2000-10-12
Granted: 2002-02-11
Abstract: A layout structure and a method for generating a layout for an integrated circuit more efficiently to catch up with remarkable developments of fabrication technologies of today. In generating a layout for a CMOS circuit, a pair of p- and n-channel transistors is used as a layout unit if one of these transistors is the dual of the other. These two transistors of are placed closely to each other so that when wires are connected to the source or drain of the p-channel transistor and to the source or drain of the n-channel transistor, those wires can be extended substantially vertically to each other.
Patent TW-526488-B (TW)
Title: Molecular level optical information storage devices
Inventor: BIGNOZZI CARLO ALBERTO
IPC: G11B7/253
Filed: 2000-11-24
Granted: 2003-04-01
Abstract: The present invention relates to use of transition metal complexes in photochromic devices, to the production of optical information storage devices based on a polymeric matrix and on metal oxides with adsorbed transition metal complexes, to the production of photochromic materials constituted by a film of metal oxide with adsorbed two different type of molecular systems, one acting as a charge transfer sensitizer and the second as an electron acceptor.
Patent TW-490345-B (TW)
Title: Resistance welding of copper and its alloys assisted by using a nickel metal interlayer
Inventor: TSAY LEU-WEN
IPC: B23K11/20
Filed: 2000-11-23
Granted: 2002-06-11
Abstract: Resistance welding is extensively applied in industry due to its simple construction, easy maitainance, and high automation. However, resistance welding can not be applied in materials with low electric resistance and high thermal conductivity, because the resistance heat can not be generated as well as accumulated in the weld spot. This invention makes use of nickel (or its alloys) interlayer to increase the contact resistance of the joined interface. Based on the experimental results, pure copper foils can be resistance joined successfully by introducing a nickel (or its alloys) interlayer with high electric resistance.
Patent TW-473956-B (TW)
Title: Semiconductor device and a process for forming the semiconductor device
Inventor: GREER STUART E
IPC: H01L23/485
Filed: 2000-12-13
Granted: 2002-01-21
Abstract: Conductive bumps (32) are formed to overlie a semiconductor die (11). The conductive bumps (32) typically have reduced levels of lead, flow at a temperature no greater than 260 DEG C, and have reduced problems associated with alpha particles. In one embodiment, the conductive bump (32) includes a mostly tin (20) with a relatively thin layer of lead (30). The lead (30) and a portion of the tin (20) interact to form a relatively low melting solder close to the eutectic point for lead and tin. Most of the tin (20) remains unreacted and can form a stand off between the semiconductor die (11) and the packaging substrate (42). Other metals and impurities can be used to improve the mechanical or electrical properties of the conductive bumps (32).
Patent TW-530396-B (TW)
Title: Stack package structure of image sensor
Inventor: DU SHIOU-WEN
IPC: H01L23/28
Filed: 2000-12-29
Granted: 2003-05-01
Abstract: The present invention is a stack package structure of image sensor, wherein the image sensor chip and integrated circuit are packaged in an encapsulation body. The structure comprises a substrate with the first surface and the second surface, the first surface has a signal input end, the second surface has a signal input end and a signal output end; an image sensor chip disposed on the first surface of the substrate, which is electrically connected to the signal input end of the substrate; an integrated circuit disposed on the second surface of the substrate, which is electrically connected to the signal input end of the second surface; and a translucent layer covering the top of the image sensor, so that the image sensor chip can receive the image signal through the translucent layer, and convert the image signal into electrical signal and transmit it to the substrate. Thus, the image sensor chip and integrated circuit can be integrated and stacked.
Patent TW-I287005-B (TW)
Title: 1,2-diaylbenzimidazoles and their pharmaceutical use
Inventor: KUHNKE JOACHIM
IPC: A61P25/16
Filed: 2001-01-12
Granted: 2007-09-21
Abstract: Benzimidazoles of general formula I, and the use of benzimidazole derivatives for the production of pharmaceutical agents for treatment and prophylaxis of diseases that are associated with a microglia activation are described.
Patent TW-502536-B (TW)
Title: Flexible content distribution method and apparatus
Inventor: BRAITBERG MICHAEL F
IPC: G06Q20/12
Filed: 2001-03-21
Granted: 2002-09-11
Abstract: Protected content is distributed to users without the need for payment at the time of media distribution. Payment can be performed at a later time in response to which content may be enabled, and/or users may selectively pay for, and receive enablement of, content such that only portions of content may be accessible at a given time. Following the first enablement of content, access rights may be expanded or otherwise changed, e.g., in response to a second payment.
Patent TW-480718-B (TW)
Title: Silicon carbide N-channel power LMOSFET
Inventor: ALOK DEV
IPC: H01L29/24
Filed: 2001-02-05
Granted: 2002-03-21
Abstract: A lateral metal-oxide-semiconductor field effect transistor (LMOSFET) includes a layer of silicon carbide semiconductor material having a p-type conductivity, source and drain regions having n-type conductivities disposed in the silicon carbide semiconductor layer, and an insulated gate electrode disposed on the silicon carbide semiconductor layer. A silicon carbide semiconductor substrate having an n-type conductivity, supports the silicon carbide semiconductor layer. A second layer of silicon carbide semiconductor material having a p-type conductivity, is disposed between the substrate and the first silicon carbide semiconductor layer to prevent parasitic transistor effects. A sinker region having an n-type conductivity extends from the source contact to the silicon carbide semiconductor substrate to ground the substrate.
Patent TW-499575-B (TW)
Title: Back light apparatus
Inventor: ITO TOMOTAKA
IPC: G02B6/00
Filed: 2001-02-13
Granted: 2002-08-21
Abstract: Disclosed is a surface light source system 10 whose feature comprises: a plurality of bar-like light sources 11a, 11b, 11c disposed in parallel to each other horizontally and is perpendicular to the longitudinal direction; reflecting members 12a, 12b, 12c, each of which is disposed to surround a right or left side, an upper side, and a lower side of the corresponding one of the light sources; light guide plates 13a, 13b, 13c made from a transparent material, each of which is disposed along the other side of the corresponding one of the light sources, and is formed into a taper shape in the cross-section; reflecting sheets 14a, 14b, 14c, each of which is disposed on the lower side of the light guide plates; and each of at least the second and later ones of the light guide plates 13b, 13c has light introducing portions 16b, 16c made from a transparent material at the front end portion of the light guide plates adjacent to the terminal end at the light source side, which is integrated with the light guide plates, so that a tandem type surface light source device is formed to provide an uniform luminance over the surface light source.
Patent TW-546431-B (TW)
Title: A multi-axis stitch base material for reinforcement and fiber reinforced plastics and the manufacturing method for the same
Inventor: HOMMA KIYOSHI
IPC: D04H3/016
Filed: 2001-02-27
Granted: 2003-08-11
Abstract: A plurality of sheets are made of a plurality cane rattan-shaped carbon fiber filament that are parallel and array each other. The direction of each sheet fiber filament is used as a basis direction to stitch yarn of stitch, laminated layers have a different angles status to stitch yarn the stitch yarn that is one piece. The range of the carbon fiber filament is from 1200 to 17000 Tex, and array pitch of carbon fiber filament is in 8 to 60 mm range. In addition, in the sheet, between the carbon fiber filament, substantially, filament width of the carbon fiber filament is widened by a non-existing gap status, and the carbon fiber filament for forming a plurality of streaks of carbon fiber filaments respectively contact a plurality of rollers and the yarn width is widen due to being suffered from bend.
Patent TW-531920-B (TW)
Title: Novel alkaline fuel cell
Inventor: OVSHINSKY STANFORD R
IPC: H01M8/18
Filed: 2001-03-12
Granted: 2003-05-11
Abstract: A fuel cell which has the ability to start up instantly and can accept recaptured energy such as that of regenerative braking by operating in reverse as an electrolyzer. The instant startup fuel cells have increased efficiency and power availability (higher voltage and current) and a dramatic improvement in operating temperature range of about -20 to 150 DEG C.
Patent TW-503376-B (TW)
Title: Mechanism for implementing z-compression transparently
Inventor: PELED GUY
IPC: G06T15/40
Filed: 2001-05-14
Granted: 2002-09-21
Abstract: The present invention provides a mechanism for implementing z-compression in a manner that is transparent to the user. Blocks of z-data are associated with storage locations in a z-data buffer in cleared, compressed, or uncompressed data states. Operations to the z-data buffer are monitored for selected operations. These operations may include clear or lock operations. If a selected operation is detected, a modified version of the selected operation is implemented to mask differences between the storage states of the data blocks.
Patent TW-502141-B (TW)
Title: Positioning servo controller
Inventor: TOMITA KOJI
IPC: G05D3/12
Filed: 2001-05-14
Granted: 2002-09-11
Abstract: The object of the present invention is to provided a positioning servo controller which is able to perform optimum positioning simply by adjusting the control gain. The positioning servo controller comprises a speed feed-forward control means (22) that uses a speed command corresponding to the sum of a position deviation and a first feed-forward compensation; an acceleration feed-forward means (23) that uses an acceleration command corresponding to the sum of a speed deviation and a second feed-forward compensation obtained by amplifying and differentiating the first feed-forward compensation amount; and a torque amplifier (3) that drives an object based on an acceleration deviation as a torque command. The first feed-forward gain and the second feed-forward gain are derived from a function that uses the values of control gain as arguments.
Patent TW-511084-B (TW)
Title: Semiconductor memory device
Inventor: TOBITA YOUICHI
IPC: H01L21/768
Filed: 2001-06-12
Granted: 2002-11-21
Abstract: Column select gates are provided to normal bit lines and refresh bit lines, respectively. When a refresh request and a data access instruction are applied on the same row, it is determined which of refresh and data access is instructed earlier, and one of a normal bit line pair and a refresh bit line pair is connected to an internal data line pair according to the determination result. A semiconductor memory device is provided by which access time is not increased even when refresh and ordinary access conflict with each other.
Patent TW-529060-B (TW)
Title: A single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
Inventor: KUBENA RANDALL L
IPC: G01C19/5656
Filed: 2001-07-04
Granted: 2003-04-21
Abstract: A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer. The mating structures of the first substrate are disposed in a confronting relationship with the mating structures of the second substrate or wafer. A eutectic bonding layer associated with one of the mating structures facilitates bonding between the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.
Patent TW-593909-B (TW)
Title: An energy dissipation device of accumulated semi-active hydraulic damper applied to buildings
Inventor: SHR MING-SHIANG
IPC: F16F9/06
Filed: 2001-07-11
Granted: 2004-06-21
Abstract: This invention relates to an energy dissipation device of accumulated semi-active hydraulic damper applied to buildings. This invention includes a damper, oil circuits, an accumulator and an oil tank. The oil is in the body of the damper and the piston is secured therein. The piston rod is fitted on the piston. The bottom end of the body of the damper connects with the lower end of the structure and makes the other end of the piston rod connects with the upper end of the structure. The first and second oil circuits can make the damper connect with the accumulator and oil tank by directional valve. The directional valve can switch by detecting the amount and direction of vibration by vibration sensor. By so, according to the exercise state of vibration of structures, the best damper power can be calculated to set forth control signal. The directional valve regulates the direction of oil in the accumulator means to regulate the best damper power at any time by the switch of the directional valve to get best effect of vibration reduction and get the energy dissipation device of the hydraulic damper of low cost and high reliability.
Patent TW-516037-B (TW)
Title: Buffer and method for compensating adjacent bit threshold voltage
Inventor: LIOU TZENG-YI
IPC: G11C16/04
Filed: 2001-07-13
Granted: 2003-01-01
Abstract: Buffer and method for compensating adjacent bit threshold voltage are disclosed. The method comprises the following steps: first determining the word line voltages that need to be input to several programming bits during the programming stage, wherein the input word line voltage is determined by the threshold voltage of the bit adjacent to the bit required to be programmed; nex, allocating the bits with the first word line input voltage and the bits with the second word line input voltage to two word line voltage groups respectively; then sequentially applying the first word line voltage to the first group and the second word line voltage to the second group to simultaneously program the bits allocated in the same group.
Patent TW-523743-B (TW)
Title: Non-volatile memory
Inventor: YEN CHING-FANG
IPC: G11C16/08
Filed: 2001-08-10
Granted: 2003-03-11
Abstract: The present invention provides a non-volatile memory with a combination of a main memory array region and a redundancy memory array region, and the non-volatile memory has a virtual ground array structure. Both the main memory array region and the redundancy memory array region comprise a plurality of memory cells, a plurality of bit lines, and a plurality of ground lines. Wherein, each memory cell comprises a source and a drain positioned in a substrate of a semiconductor wafer. Each bit line is electrically connected to the drains of a predetermined number of memory cells in the main memory array region or the redundancy memory array region, and each ground line is electrically connected to the sources of a predetermined number of memory cells in the main memory array region or the redundancy memory array region. The non-volatile memory according to the present invention utilizes a main memory decoder and a redundancy memory decoder to make the main memory array region being directly adjacent to the redundancy memory array region through a common source/drain.
Patent TW-I302114-B (TW)
Title: Method of impregnating a carrier matrix with solid and/or liquid compounds using compressed gases, and materials thus impregnated
Inventor: HEIDLAS JUERGEN
IPC: A23L5/00
Filed: 2001-08-20
Granted: 2008-10-21
Abstract: The invention relates to a method for impregnating a support matrix with solid and/or liquid compounds using a compressed gas or a compressed mixture of gases at densities ranging from 0.15 to 1.3 kg/l and at least two unsymmetrical pressure changes (pulsations). The method is further characterized in that both a multitude of impregnating substances such as biologically active compounds, technical materials or metal-organic compounds, as well as support matrices of biological origin and organic or inorganic substances can be used that have large inner surfaces and/or inner surfaces that are difficult to access.
Patent TW-517239-B (TW)
Title: Non-volatile semiconductor device and system
Inventor: TANAKA TOMOHARU
IPC: H01L27/115
Filed: 2001-08-31
Granted: 2003-01-11
Abstract: A non-volatile semiconductor memory device that can suppress the increasing of cost is provided. It comprises: a package 5 with a first semiconductor substrate, a memory cell array and word lines connecting to the memory cell array each formed on the first semiconductor substrate, and plural transfer gates that have one terminal connecting to the word line and the other terminal connecting to the input terminal, and a package 4 having a second semiconductor substrate. A word line control circuit that controls the word lines to output the signal from the output terminal connecting to the input terminal is formed on the second semiconductor substrate.
Patent TW-530033-B (TW)
Title: Glass for covering electrodes and plasma display panel
Inventor: ONODA HITOSHI
IPC: H01J11/22
Filed: 2001-10-11
Granted: 2003-05-01
Abstract: A glass for covering electrodes, which consists, as represented by mass percentage based on the following oxides, essentially of: Mass percentage PbO 44 to 68%, Bi2O3 0 to 18%, B2O3 19 to 23%, SiO2 1.2 to 5%, Al2O3 2 to 6%, ZnO 4 to 9%, CuO 0.1 to 0.5%, In2O3 1.1 to 2%, SnO2 0 to 1%, and CeO2 0 to 1%.
Patent TW-553784-B (TW)
Title: Method and apparatus for manufacturing pipes
Inventor: LEIPONEN MATTI
IPC: B21B13/00
Filed: 2001-12-11
Granted: 2003-09-21
Abstract: A method for manufacturing a tube made of a non-ferrous material, particularly a tube made of mainly copper, in which method, in the first working step the tube billet (1) is worked so that mainly owing to the deformation resistance, the temperature of the tube billet under operation rises up to the recrystallization range, at least on the spot that is being worked. Essentially immediately after the first working step (F1), the tube billet is subjected to at least a second working step (F2), and the tube billet (1) is maintained, at least during the first and second working step in non-oxidizing conditions. The invention also relates to an apparatus.
Patent TW-559739-B (TW)
Title: Image processor and pattern recognition apparatus using the image processor
Inventor: HASHIMOTO YOSHIHITO
IPC: G06V30/162
Filed: 2001-12-14
Granted: 2003-11-01
Abstract: An image processor for generating, from a surface image of an object having a pattern, a processed image having a distinct contrast between the pattern and a background, is provided. This image processor comprises a first smoothing filter for generating a first smoothed image; a second smoothing filter for generating a second smoothed image; a weighing unit for multiplying each of pixel values of the first smoothed image by a weight coefficient of 1 or more to determine a weighted pixel value; a differential image generator for subtracting each of weighted pixel values provided by the weighing unit from a pixel value of a corresponding pixel of the second smoothed image to generate a differential image; and an image extracting unit for extracting pixel values having the positive sign from the differential image to obtain the processed image. For example, this image processor can be utilized in a pattern recognition apparatus.
Patent TW-540193-B (TW)
Title: Plug
Inventor: NOZAKI FUMIO
IPC: H01R31/00
Filed: 2001-12-25
Granted: 2003-07-01
Abstract: The present invention provides a versatile plug, which is capable of preventing a signal wire (5) and a grounding wire (7) arranged in a pair from being connected with a reverse polarity and preventing mutually adjacent lead wires (3) from mutual short circuit, and which is capable of easily performing a connection work of the lead wires (3) and also has a versatility capable of performing the connection using other lead wires (3). To achieve the purpose, with reference to figure 1, the plug is equipped with: a pair of contact terminals (25) on a plug side, which contact with a pair of terminals (131) on an equipment side, a plug housing (15) whose shape is made asymmetric in accordance with a shape of a connection concave part (139) on the equipment side, and a clamp means respectively removable at the pair of lead wires (3). Only by inserting the plug into the connection concave part (139), it is possible to electrically connect the pair of lead wires (3) to the pair of terminals (131) on the equipment side, and this connection cannot be made with the reverse polarity because the plug housing (15) has the asymmetric shape. Furthermore, as the lead wires (3) are connected by the clamp means, the lead wires (3) of arbitrary sizes can be connected to the contact terminals (25) on the plug side.
Patent TW-527730-B (TW)
Title: Semiconductor memory device and manufacturing method thereof
Inventor: NORO FUMIHIKO
IPC: H01L29/788
Filed: 2002-02-22
Granted: 2003-04-11
Abstract: A semiconductor memory device includes a control gate electrode formed on a first main surface of a semiconductor substrate through a first insulating film, and a floating gate electrode covering a stepped region which connects the first main surface of the semiconductor substrate and a second main surface positioned at a lower level than the first main surface through a second insulating film and having a side surface capacitively coupled with one side surface of the control gate electrode through a third insulating film. The stepped region has a first stepped portion connected with the first main surface and a second stepped portion connecting the first stepped portion and the second main surface.