Patent SG-11201808059U-A (SG)
Title: Non-aqueous tungsten compatible metal nitride selective etchants and cleaners
Inventor: HSU CHIEN-PIN
IPC: C11D7/50
Filed: 2017-03-23
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization MD 110111101110101011111 HO 11111 011101111011110110111001111111110111011# International Bureau 0.. .... .. ..... ...,/ (10) International Publication Number (43) International Publication Date WO 2017/165637 Al 28 September 2017 (28.09.2017) WIP0 I PCT (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) (72) (71) International Patent Classification: Yeon [US/US]; Avantor Performance Materials, LLC, C09K 13/08 (2006.01) C11D 7/50 (2006.01) 3477 Corporate Parkway, Suite 200, Center Valley, PA 18034 (US). International Application Number: PCT/US2017/023797 (74) Agents: BARON, Mark E. et al.; Hoffmann & Baron, LLP, 6900 Jericho Turnpike, Syosset, NY 11791 (US). International Filing Date: 23 March 2017 (23.03.2017) (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, English AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, English BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, Priority Data: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, 62/312,689 24 March 2016 (24.03.2016) US KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, Applicant: AVANTOR PERFORMANCE MATERI- MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, ALS, LLC [US/US]; 3477 Corporate Parkway, Suite 200, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, Center Valley, PA 18034 (US). RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, Inventors; and ZA, ZM, ZW. Applicants : HSU, Chien-pin, Sherman [US/US]; 85 Columbia Avenue, Berkeley Heights, NJ 07922 (US). (84) Designated States (unless otherwise indicated, for every CHIU, Sam, Chun-yi [US/US]; Avantor Performance Ma- kind of regional protection available): ARIPO (BW, GH, terials, Llc, 3477 Corporate Parkway, Suite 200, Center GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Valley, PA 18034 (US). WEI, Chu-hung, Wade [US/US]; Avantor Performance Materials, Llc, 3477 Corporate Park- TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, way, Suite 200, Center Valley, PA 18034 (US). OH, Mi, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, [Continued on next page] = = — = = Title: NON 250 7 c «a ct — 100 w (54) —1 -AQUEOUS TUNGSTEN COMPATIBLE METAL NITRIDE Figure 1 Graph to illustrate Nitridation Effects on TiN Etch Rates. SELECTIVE ETCHANTS AND CLEANERS (57) : Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride-activated, unique or- ganic-solvent based microelectronic select- ive etchant/cleaner compositions with high metal nitride etch and broad, excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible ox- idizers, such as hydrogen peroxide or particle-generating corrosion inhibitors. = __ 200 E 150 50 Effects on Etch Rates by Degree of Istitridation --t-TiN ER - 100:1 DHF (25 °C) -a-11N ER - X11117 (35*C) 1133 1.67 1R&ative Ratio -% Nitrogen] = = = = = = = _ _ 11 IN M 1 1 in Il IN Il 0 ei • Relative % Nitrogen of TiN films increase from 1X to 1.6-1.7X TiN etch rates by 100:1 DHF decrease to < 1% TiN etch rates by XM-7 decrease to <16% O WO 2017/165637 Al MIDEDIM000101011101010EMIEM111111011100111111111011110111111 LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Published: SM, TR), GW, KM, ML, MR, NE, SN, OAPI (BF, BJ, CF, CG, CI, CM, TD, TG). GA, GN, GQ, with international search report (Art. 21(3))