Patent SG-11201807432Y-A (SG)
Title: A piezoelectric thin film element
Inventor: MARDILOVICH PETER
IPC: H01L41/318
Filed: 2017-03-14
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 11111111011110111010101111101011111011101111011111111111011111111101111011111 International Bureau .. .... ..Yejd (10) International Publication Number ..... .....!;,,, (43) International Publication Date WO 2017/158344 Al 21 September 2017 (21.09.2017) WIP0 I PCT (51) International Patent Classification: (74) Agent: TLIP LTD; Leeds Innovation Centre, 103 Claren- HO1L 41/187 (2006.01) HO1L 41/318 (2013.01) don Road, Leeds Yorkshire LS2 9DF (GB). (21) International Application Number: (81) Designated States (unless otherwise indicated, for every PCT/GB2017/050695 kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (22) International Filing Date: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, 14 March 2017 (14.03.2017) DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (25) Filing Language: English HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, (26) Publication Language: English MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, (30) Priority Data: NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, 16160657.9 16 March 2016 (16.03.2016) EP RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (71) Applicant: XAAR TECHNOLOGY LIMITED ZA, ZM, ZW. [GB/GB]; 316 Science Park, Cambridge CB4 OXR (GB). (84) Designated States (unless otherwise indicated, for every (72) Inventors: MARDILOVICH, Peter; c/o Xaar Technology kind of regional protection available): ARIPO (BW, GH, Limited, 316 Science Park, Cambridge CB4 OXR (GB). GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, KO, Song-Won; c/o Xaar Technology Limited, 316 Sci- TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, ence Park, Cambridge CB4 OXR (GB). TRO- TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, LIER-MCKINSTRY, Susan; The Pennsylvania State DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, _ University, N-227 Millennium Science Complex, Univer- LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, — _ sity Park, Philadelphia, Pennsylvania 16802 (US). BOR- SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, MAN, Trent; c/o Xaar Technology Limited, 316 Science GW, KM, ML, MR, NE, SN, TD, TG). Park, Cambridge CB4 OXR (GB). ZHU, Wanlin; c/o Xaar Technology Limited, 316 Science Park, Cambridge CB4 Published: OXR (GB). — with international search report (Art. 21(3)) = = = (54) Title: A PIEZOELECTRIC THIN FILM ELEMENT = — i#2. RTP = = -1--- PH = --- RTP = _ 13 = ,.. 1 3 = •••---..................„ 1--- 133 to 13 ----- 13 z, = t--- 131 13 --- RTP _ \ 1z1 ' F1 ' I ii ,-, 7r 7r M cc kin ,—, N (57) : A method for the manufacture of a piezoelectric thin film element comprising a first electrode,a second electrode and 1-1 C one or more piezoelectric thin films there between which method comprises forming a piezoelectric thin film comprising PZT by a ei chemical solution deposition using three solutions wherein the forming of the PZT thin film comprises forming a bulk PZT thin film O layer from the three solutions, wherein each solution has a Zr/Ti content which is different from that of any other solution and at ,1 . least one solution has an excess lead content greater than that of any other solution, such that the bulk PZT thin film layer has a sub - .,. stantially uniform lead content and Zr/(Zr+Ti) ratio in its thickness direction.