Patent SG-11201810824U-A (SG)
Title: Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
Inventor: PANDEY VISHWAS KUMAR
IPC: H01L21/67
Filed: 2017-01-25
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 07 December 2017 (07.12.2017) WIP0 I PCT o n DID lII D ono 1101 oimIE (10) International Publication Number WO 2017/209802 Al (51) International Patent Classification: H01L 21/02 (2006.01) HOlL 21/67 (2006.01) (21) International Application Number: PCT/US2017/014864 (22) International Filing Date: 25 January 2017 (25.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/345,631 03 June 2016 (03.06.2016) US 62/379,987 26 August 2016 (26.08.2016) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (72) Inventors: PANDEY, Vishwas Kumar; 4-25/2 Shiv Kru- pa, Ved nagar, Ujjain, Madhya Pradesh 456010 (IN). SHAH, Kartik; 18908 Bellgrove Circle, Saratoga, Cal- ifornia 95070 (US). TONG, Edric; 955 Larkspur Av- enue, Sunnyvale, California 94086-8635 (US). VASUDE- VA, Prashanth; Flat C-504, Melody Apts., Nayandanahal- li, Mysore Road, Bangalore 560039 (IN). (74) Agent: PATTERSON, B. Todd et al.; Patterson & Sheri- dan, L.L.P., 24 Greenway Plaza, Suite 1600, Houston, Texas 77046 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, (54) Title: EFFECTIVE AND NOVEL DESIGN FOR LOWER PARTICLE COUNT AND BETTER WAFER QUALITY BY DIF- FUSING THE FLOW INSIDE THE CHAMBER 100--„ 1 / 4. 102 107 111 1-1 N O GC t:T O N _ N O 1-1 N C 303 124 116 132 130 122 Fig. 3 (57) : Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber. [Continued on next page] WO 2017/209802 Al MIDEDIMOMMIDIRMEMO 010 1101M01101011MEMOIMIE MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))