baber/WOPTO huggingface dataset:
Patent TW-371702-B (TW)
Title: Exhaust pipe supporting device
Inventor: YAMAGUCHI NAOKI
IPC: F16F7/108
Filed: 1997-03-25
Granted: 1999-10-11
Abstract: It is an object of the present invention to provides an exhaust pipe supporting device adapted to retain a frequency characteristic which is stable against temperature changes ranging from ordinary temperature to 100 degree C and effectively attain the suppression of vibration transmission in a frequency range of 300-400 Hz, or in a wider range of 200-400 Hz; the invention provides an exhaust pipe supporting device integrally formed of an elastic material such as rubber, including a first holder portion having a through-hole to receive a support member associated with the car body, a second holder portion having a through-hole to receive a support member associated with the exhaust pipe, a pair of lateral walls which connect the first and second holder portions in spaced relation to each other on opposite sides, and a central connector portion disposed intermediate between the first and second holder portions and connected to the opposite walls, and this exhaust pipe supporting device is characterized in that the central connector portion has its central portion formed as a mass section having metal section of enlarged section which is heavier than the opposite lateral portions, the opposite lateral portions which extend from the mass section to the opposite sides being bifurcated to provide branch portion, the branch portions being connected to the lateral walls; the branch angle alpha of said branch portions is set within the range of 30-60 degrees; the ratios (T/L) if their thickness to length is set within the range of 0.2-0.5; thereby the aforesaid object is achieved.
Patent TW-348342-B (TW)
Title: Synchronous step-up method without transient voltage peak value for parallel capacitors
Inventor: NANMING CHEN
IPC: H03K17/00
Filed: 1997-04-16
Granted: 1998-12-21
Abstract: A voltage peak synchronous step-up method for parallel capacitors in a circuit comprising an a.c. power and a switch, which comprises the following steps: (a) pre-charging the parallel capacitors with a d.c. voltage to a predetermined voltage; and (b) simultaneously switching off the switch at the instant when the voltage peaks of the a.c. power and the predetermined voltage having an identical polarity.
Patent TW-323987-B (TW)
Title: The forming method for compound plank and its apparatus
Inventor: HWANG JYI-SHENQ
IPC: B32B15/08
Filed: 1997-04-22
Granted: 1998-01-01
Abstract: A forming method for compound plank, includes: - Separately and continuously send each plank material to material-feeding hole, and contact with each other; - Proceed clamping & pressing process to combine each plank material into compound plank, that clamping & pressing process includes front-end and back-end clamping & pressing process; - Add force to press compound plank, and simultaneously push compound plank to progress continuously; - Proceed bending & stretching process in between front- & back-end clamping & pressing process; - Cut compound plank with suitable length after pushing a certain length.
Patent TW-357380-B (TW)
Title: Manufacturing method of cathode structure, electronic gun structure, electronic tube, heater and cathode structures
Inventor: KOBAYASHI KAZUO
IPC: H01J1/22
Filed: 1997-05-21
Granted: 1999-05-01
Abstract: A sort of cathode structure, including: an insulation substrate, having a pair of opposing panels and thermal transmission; and a cathode substrate, disposed on one side of said insulation substrate; and a heating unit, disposed on the other side of the insulation substrate, for heating of said cathode substrate; and a electronic terminal, being attached to said heating unit by the conductive layer on said heating unit formed by the electronic terminal.
Patent TW-338160-B (TW)
Title: Semiconductor programmable device such as common access of On/Off common program switch counter-fuse identification circuit
Inventor: MERRITT IADD A
IPC: G11C17/18
Filed: 1997-08-12
Granted: 1998-08-11
Abstract: A semiconductor circuit comprising; a plurality of programmable elements with a first end and the second end connected to the first power supply power; a plurality of second semiconductor switches connected with the plurality of programmable elements corresponding to the first end of the second end; and a plurality of second semiconductor switches connected with the plurality of programmable elements corresponding to the selected first end of the second ends of the semiconductor switches and the second end of the second power supply.
Patent TW-342562-B (TW)
Title: Arrangements and methods for generating a radio frequency signal
Inventor: RICHARD HELLBERG
IPC: H04L27/20
Filed: 1997-09-02
Granted: 1998-10-11
Abstract: An arrangement for pulse-shaping and power-amplifying an information signal (XIF), comprising: - a sigma delta modulator (410,11410) for generating a digital signal (Y) from the information signal (XIF); - a mixing and amplifying unit (420, 11420) for forming a voltage-switched information-carrying signal (P) from the digital signal (Y); and - a filtering unit (430,11430) for generating a band-limited signal (PBP) from the voltage switched signal (P), characterized in that - the digital signal (Y) is M-near, I.e. includes M-discrete signal values; and in that - the mixing and amplifying unit (420, 11420) includes a switch unit (423) which includes at least M mutually independent switches (5330, 5340 and 12310, 12320 respectively) which are used to generate the information-carrying signal (P).
Patent TW-350192-B (TW)
Title: Call handover between a DECT subsystem and a mobile radio system
Inventor: DELLANTONI NIKOLAUS
IPC: H04W36/14
Filed: 1997-09-03
Granted: 1999-01-11
Abstract: A sort of call handover between a DECT subsystem and a mobile radio system, having left the supply area of a DECT subsystem (DUS) which is connected to a cellular modile radio system (GSM) to the GSM standard, to the mobile radio system (GSM), in which the mobile radio set (MF) emits a call for call re-establishment and is then accepted by a base station (BSS) in the mobile radio system (GSM).
Patent TW-342345-B (TW)
Title: Method for separation and purification of fluoride from industrial wastes
Inventor: GERALD A KRULIK
IPC: C02F9/00
Filed: 1997-09-08
Granted: 1998-10-11
Abstract: A method for the removal and purification of substantially all of the fluoride ions contained in a solution containing greater than 10 parts per million (ppm) fluoride ion, a mixture of other anions, silicon in the form of a fluorosilicic acid, silicic acid, silicates, or silicon tetrafluoride, and optionally also containing complex metal fluorides, to produce an ultrapure hydrofluoric acid, comprising the steps of (a) adjusting the pH of the solution to an alkaline pH to hydrolyze the fluorosilicic acid and any complex metal fluorides; (b) removing the fluoride ions and other anions from the solution by passing the solution through an ion exchange resin, where the ion exchange resin is adapted to absorb substantially all of the fluoride passed over the ion exchange resin; (c) displacing the fluoride ions and other anions bound to the ion exchange resin, thereby forming a mixture of anions in an effluent emanating from resin; and (d) distilling the mixture of anions in the effluent from a sulfuric acid solution to generate ultrapure hydrofluoric acid.
Patent TW-353805-B (TW)
Title: Semiconductor device and its manufacturing method
Inventor: ISHIGAKI YOSHIYUKI
IPC: H01L21/8244
Filed: 1997-10-22
Granted: 1999-03-01
Abstract: A semiconductor device having memory cells, which is characterized in comprising: a first wiring layer formed on a semiconductor substrate and comprising a high resistance wiring portion and a memory node portion, and a GND wiring layer on the first wiring layer and formed through a dielectric film; furthermore, the memory node portion of the first wiring layer and the GND wiring layer, and the dielectric film being used to form a capacitive element of the memory node portion; and, the first wiring layer being disposed point-symmetrically relative to the center of the memory cells; and a plurality of adjacent memory cells being similarly disposed in the extension direction of the wordlines.
Patent TW-358826-B (TW)
Title: Compatibilized polymer blends formed using a multifunctional agent
Inventor: DIAS ANTHONY J
IPC: C08L9/00
Filed: 1997-12-10
Granted: 1999-05-21
Abstract: A process for producing compatibilized blend of general purpose rubbers and benzyl halide polymers, featuring: mixing the general purpose rubber and benzyl halide polymer in the presence of multifunctional agent and random free radical to form a compatibilized blend, the amount of the multifunctional agent is 0.01 to 10 wt% of the total weight of the blend and it is a compound expressed by the general formula (X)n-(R)m-(Y)p, in which m is equal or greater than 0, n and p are equal or greater than 1, X is selected from triazoline diketone, maleic anhydride, methyl maleic anhydride, thio maleic anhydride, hydroxy maleic anhydride and derivatives thereof, and X contains a free radical trapping agent selected from sulfide, chloroimide, thio-acid, acrylic acid and methacrylic acid, R is selected from alkyl, aryl, aryl substituted by alkyl and polymers and contains 1 to 100 carbon atoms, and Y is selected from carboxylic ester, amine, phosphine, alkoxide, benzene vapor and thio-acid esters.
Patent TW-461042-B (TW)
Title: Method and system for selectively coupling a conductive material to a surface of a semiconductor device
Inventor: KONECNI ANTHONY J
IPC: C23C16/02
Filed: 1998-03-23
Granted: 2001-10-21
Abstract: A method for selectively coupling a conductive material (60) to a contact region (32) of a semiconductor device (8) includes bombarding residual material (40) coupled to the contact region (32) with inert ions (44) at a first position associated with an integrated cluster tool (90) to increase the reactive surface area of the residual material (40). Hydrogen ions (46) are introduced at the first position for reaction with the residual material (40) to remove the residual material (40) from the contact region (32). The semiconductor device (8) is transferred in situ from the first position to a second position associated with the integrated cluster tool (90). The conductive material (60) is selectively coupled to the contact region (32) at the second position using chemical vapor deposition.
Patent TW-437233-B (TW)
Title: Image capture apparatus
Inventor: GOH TIONG HWEE
IPC: H04N5/225
Filed: 1998-05-06
Granted: 2001-05-28
Abstract: Image capture apparatus is disclosed which comprises a video camera 10 having a camera body15, lens 17, lens adaptor 100 and a frame grabber 30. The lens adaptor 100 is anamorphic, doubling the height of an image in a direction perpendicular to the field scanning direction of the video camera.
Patent TW-368504-B (TW)
Title: Modified arginine deiminase
Inventor: CLARK MICHAEL A
IPC: C12R1/35
Filed: 1998-05-12
Granted: 1999-09-01
Abstract: The present invention is directed to arginine deiminase modified with polyethylene glycol, to methods of treating cancer, and to methods of treating and/or inhibiting metastasis, especially for the melanoma and hepatoma. The average total molecular weight of polyethylene glycol is about 1,000 to 50,000 and is prepared directly or by a bio-compatible linking group.
Patent TW-395005-B (TW)
Title: Method and apparatus for forming a new overlay target on a substrate
Inventor: LIN HUA-TAI
IPC: H01L21/66
Filed: 1998-05-20
Granted: 2000-06-21
Abstract: Overlay target and quantitative calculation are used to minimize the error of measuring the overlay of the integrated circuit. This method is particularly applicable for accurately measure the layer to layer overlay of a substrate having a material layer, such as isolation, polysilicon, and metal layer with an overlay target of non-symmetric profile. It is due to the non-symmetrical deposition and chemical mechanical polishing. The new method comprises: forming a substrate on a triangular first overlay target on a first material layer; forming a second material layer with non-symmetric profile on the first material layer. When patterning the second material layer, the smaller triangular second overlay target is etched, and the smaller second overlay target aligns with the mid-point of the edge of the first overlay target, and the non-symmetry of the second material layer will not be affected. A calculation method is used to determine the centroid of the first and second overlay target. When they are completely aligned, two centroids overlay, and the distance between centroids represents the degree of the layer-to-layer misalignment of the two material layers.
Patent TW-373361-B (TW)
Title: Semiconductor laser device
Inventor: SHIMADA NAOHIRO
IPC: H01S5/223
Filed: 1998-06-02
Granted: 1999-11-01
Abstract: To provide a semiconductor laser system having an MQW active region displaying excellent temperature characteristics such as the decline in threshold value, the improvement of light emitting efficiency, the current reduction in high temperature operation time, etc., despite the oscillation wavelength of 650 nm by making the quantum well layer thinner. An InGaAl P base active region 3 almost grid-matched with a Gaps substrate 1 is made into a multiple quantum well (MQW) structured quantum well layer 11 made of InGaP and in the case of the oscillation wavelength by current implantation within 670 nm, the thickness (Lz) of the InGaP quantum well layer 11 is made less than 8 nm to be provided with a larger lattice constant than that of the GaAs substrate 1 for the grid-unmatching furthermore, the compression strain is imposed on the quantum well layer 11. In such a constitution, the quantum well layer 11 is made thinner to be imposed of the compression strain for increasing the gain so that the temperature characteristics may be improved such as the reduction in threshold value, the improvement of efficiency, the current reduction in the high temperature operation time of the laser in the oscillation wavelength of 650 nm.
Patent TW-593551-B (TW)
Title: Heat-conductive rubber composition material and heat-conductive rubber sheet
Inventor: MIYAHARA TOSHIO
IPC: C08L23/22
Filed: 1998-06-03
Granted: 2004-06-21
Abstract: This invention relates to a heat-conductive rubber composition material, which comprises a rubber essentially consisting of an acrylic rubber, a butyl rubber, an ethylene propylene rubber or a blended rubber which comprises at least two of acrylic rubber, butyl rubber, and ethylene propylene rubber, and 50 to 85 weight % of hydrophobic magnesium oxide powder, a heat-conductive rubber sheet prepared by forming the above thermal conductive rubber composition material, and a heat-conductive sheet, which comprises a soft metal sheet formed of a material with a tensile strength less than 100 N/mm<2> and a rubber layer formed on at least one surface of the soft metal sheet and formed of essentially consisting of an acrylic rubber, a butyl rubber, an ethylene propylene rubber or a blended rubber which comprises at least two of acrylic rubber, butyl rubber, and ethylene propylene rubber, and 50 to 85 weight % of hydrophobic magnesium oxide powder.
Patent TW-399209-B (TW)
Title: Semiconductor memory device
Inventor: HATAKEYAMA ATSUSHI
IPC: G11C29/00
Filed: 1998-06-08
Granted: 2000-07-21
Abstract: A structure of a redundant cell array applicable for a compression test in which a defective cell is detected by concurrently selecting cells in a plurality of segments is provided. In the structure of the redundant cell array in a semiconductor storage device according to the present invention, areas for the compression test in which data write and read are performed by concurrently selecting memory cells in a plurality of segments SGM can be replaced to a redundancy cell array 30. That is, at least, one part of addresses Y0 and Y1 decoded by a column decoder 40 is stored in a redundant ROM of a redundancy detector 34 and is replaced to the redundant cell array 30 when the addresses is coincided with the stored address. In this case, at least, one part of the addresses Y2 and Y3 decoded by a segment decoder 50 is supplied to a redundant column decoder 36 provided for the redundant cell array 30.
Patent TW-460406-B (TW)
Title: A method for producing fine particles of metal oxide
Inventor: NAKAMURA KASUMI
IPC: B01J21/06
Filed: 1998-08-13
Granted: 2001-10-21
Abstract: This invention is a method for producing fine particles of metal oxide characterized in that metal halide is hydrolyzed in the presence of organic solvent. According to this invention, under hydrolysis of titanium tetrachrolide, anatase type titanium oxide can be obtained by selecting hydrophilic organic solvent, and rutile type titanium oxide can be obtained by selecting hydrophobic organic solvent.
Patent TW-402783-B (TW)
Title: Semiconductor device and method of manufacturing thereof
Inventor: ISHIDA MASAHIRO
IPC: H01L21/768
Filed: 1998-08-31
Granted: 2000-08-21
Abstract: The interlayer insulating film (12) having the contact hole (15a - 17a) is formed on the major surface of the semiconductor substrate (1). The metal silicide film (13) is formed on the interlayer thin film (12). It extends on the metal silicide film from the inside of the contact hole (15a - 17a) to form polysilicon film (18). The local wiring (19a) is formed through this polysilicon film (18) and the metal silicide film (13).
Patent TW-387139-B (TW)
Title: Circuit for electrostatic discharge (ESD) protection
Inventor: SMITH JEREMY C
IPC: H01L23/00
Filed: 1998-08-31
Granted: 2000-04-11
Abstract: An electrostatic discharge (ESD) circuit (700) provides robust protection to an input/output driver circuit (10). The discharge path is provided by a bipolar transistor (202). The bipolar device is triggered by a combination of an n-type MOSFET (702), a string of diodes (200), and a biasing circuit (704). The trigger point of the MOSFET is programmable by varying the number of individual diodes in the string of diodes. The relatively high transconductance of the n-type MOSFET allows the use of a smaller ESD circuit for a given degree of protection.
Patent TW-523640-B (TW)
Title: Antireflection film, compositions for photo-absorbing film and polymer used therefor
Inventor: PADMANABAN MUNIRATHNA
IPC: G03F7/004
Filed: 1998-09-16
Granted: 2003-03-11
Abstract: Provided are antireflection film, compositions for photo-absorbing film and new copolymer used therefor, which films is excellent in good photo-absorbing in the range of 100-450 nm, conservation stability and step coverage, no footing and intermixing. Compositions for bottom face antireflection film or compositions for photo-absorbing film contain acrylics or methacrylics copolymer having at least (1) repeating unit in which an amino-or hydroxy-containing organic chromophore group which absorbs the light having a wave length in the range of 100-450 nm is reactionally combined to the carboxyl group attached to the carbon atom of the main chain, either directly or by way of-R1NHCXY-group wherein R1 is alkylene, X is O or NR6, R6 is H, substituted or unsubstituted, straight chain or cylic alkyl or phenylene group; and (2) repeating unit formed from reactionally combining alkyl group containing double bond or epoxy group, to the carboxyl group bonded to the carbon atom of main chain.
Patent TW-585780-B (TW)
Title: Resorcinol derivatives
Inventor: HU LAN
IPC: A61K8/365
Filed: 1998-09-22
Granted: 2004-05-01
Abstract: The present invention relates to the use of certain resorcinol derivatives as skin lightening agents. A topical pharmaceutical composition for lightening skin or reducing the pigmentation of skin in a human, comprising an amount of a compound of formula I, wherein X is hydrogen; OR1, wherein R1 represents hydrogen, (C1-C6)alkyl or aryl-(C1-C6)alkyl; OCOR2 wherein R2 represents (C1-C6)alkyl, aryl-(C1-C6)alkyl or phenyl; halogen; (C1-C6)alkyl; aryl-(C1-C6)alkyl; SR3 wherein R3 represents hydrogen, (C1-C6)alkyl, or aryl-(C1-C6)alkyl; or NHR1 wherein R1 is defined as above; n is 0 to 3; and the dashed line represents an optional double bond; or a pharmaceutically acceptable salt thereof; which amount of the compound of formula I or pharmaceutically acceptable salt thereof is effective in lightening skin or reducing the pigmentation of skin in said human; and a pharmaceutically acceptable carrier.
Patent TW-425310-B (TW)
Title: Slot type internally-mixing nozzle system
Inventor: WANG JIUE-KUAN
IPC: B05B1/12
Filed: 1998-09-30
Granted: 2001-03-11
Abstract: This new invention is an internally-mixing slot-type nozzle system and is designed for the applications of metal powder production, spray forming technology, chemical and mechanical manufacturing processes, as well as combustion and energy production, etc. It is a forced type operation with the air-assisted capability. The structure of this invention consists a primary nozzle, a mouthpiece nozzle, furnace, heaters, working media supplying and controlling systems as well as exhaust system, etc. It has multiple function capabilities, i.e., it can be operated with the primary nozzle or the mouthpiece nozzle alone or with both pieces together. There is a runner tube inside the primary nozzle. The nozzle could be heated above the molten point of the working medium to avoid the solidification of the molten metal in the runner. A distributor device is designed at the outlet of the runner to ensure the uniform distribution of the liquid matter before atomization. The nozzle outlet cross section is rectangular or other geometric shapes. The atomization gases are introduced into the nozzle from the two sides of the nozzle. The gas is mixed with the liquid matter discharged from the runner. The flow path can be designed as the parallel or convergent/divergent profiles depending on the atomization gas speed required. The flow rates of the liquid matter and the atomization gas can be adjusted to provide the required gas/liquid flow ratios. It is simple in fabrication as well as maintenance. It can be used in wide applications for atomization of the high-viscosity oil, spray forming, and power production. Mean droplet size as small as 13 mu m has been achieved with the gas-liquid mass flow ratio low down to the tenth of the conventional nozzle.
Patent TW-414743-B (TW)
Title: Manufacturing method of a cast iron welding rod
Inventor: LIU CHUAN-SHENG
IPC: B23K35/00
Filed: 1998-10-01
Granted: 2000-12-11
Abstract: The invention provides a manufacturing method of a cast iron welding rod, which includes the following steps: (1) Place a preset composition of a welding rod material into high frequency induction furnace to melt. (2) Guide the melted liquid passing between two rollers for cold rolling to solidify and form thin metal plate. (3) Heat treat the thin metal plate properly. (4) Cut the thin metal plate into a metal rod. (5) Surface treat the metal rod to be a welding rod; By above-mentioned method, it can strengthen structure, and decreasing treating process and manufacturing cost.
Patent TW-432525-B (TW)
Title: Insitu dry cleaning method for poly gate etch
Inventor: FRITZINGER LARRY BRUCE
IPC: C23G5/00
Filed: 1998-12-21
Granted: 2001-05-01
Abstract: The present invention provides a method for cleaning a contaminated chamber used in the manufacture of semiconductor devices. In one embodiment, the method comprises the steps of injecting, under pressure, a gas mixture of a fluorine-containing gas and an inert gas into the contaminated chamber, radiating the contaminated chamber with a radio frequency during the step of injecting, and removing volatile by-products or solid particulates from the contaminated chamber by performing pump-purge cycles within the contaminated chamber.
Patent TW-495709-B (TW)
Title: Improved method of report PC software
Inventor: WANG GUO-MING
IPC: G06F3/14
Filed: 1999-01-21
Granted: 2002-07-21
Abstract: The present invention is an improved method of report PC software specially designed for users using monitor/TV for reporting or mathematical applications. It not only increases graphic attachment/clearance speed but also provides a bright area, dark light area, and instant zooming functions for better reporting highlight display.