Patent GB-1190393-A (GB)
Title: Circuit for a Solid State Switching Device
IPC: G11C16/02
Filed: 1967-06-09
Abstract: 1,190,393. Semi-conductor switching circuits. INTERNATIONAL STANDARD ELECTRIC CORP. 9 June, 1967 [16 June, 1966], No. 26734/67. Heading H3T. [Also in Division H2] In a switching circuit having a body of semiconductor material Q containing no barrier layers or PN junctions and capable of existing in high or low resistance states, means is provided for applying a voltage across the body equal to the breakdown voltage level of the body necessary to change its state and means is provided operative when breakdown has been reached to deliver to the body an electrical current pulse of a total magnitude and duration such that the state of the body is changed and that the breakdown voltage level of the body in its resulting state is maintained at a substantially constant value. As shown in Fig. 2 when the switch S1 is closed the voltage Vc across the capacitor C rises until the breakdown voltage of the semi-conductor device Q is reached and it switches to a low-resistance condition. When the switch S1 is opened the capacitor C discharges via R2 and the device Q which remains in a low-resistance condition. To turn the device Q off a substantial current is caused to flow through the device by closing switch S1 and then when the switch S1 is opened the abrupt decrease in current to zero causes the device to turn off. In an alternative turn-off circuit (Fig. 4, not shown) the device is connected in series with the supply (E<SP>1</SP>) via a resistor (R 3 ) and switch (S2). The amounts of material, such as arsenic-tellurium-iodine, which are conductive and non-conductive (3, 4, Fig. 1, not shown) within the device depend on the magnitudes of the turn-on voltage and turn-off current used. The harder the device is off the harder the circuit of Fig. 2 tends to turn it on and similarly if the device is not turned off enough the circuit of Fig. 2 tends to turn the device on less hard resulting in the device being turned off more the next time it is switched off. The circuit of Fig. 2 therefore serves to maintain the breakdown voltage level of the device Q in its resulting ON state at a substantially constant value. In a circuit for setting the breakdown voltage to a desired value (Fig. 8, which may be represented in a simplified form, Fig. 7, not shown), a turn-off signal is applied at 9, this closes contacts of a relay RL1 so that a pulse produced via a differentiator 13 triggers a blocking oscillator 16. The output from the blocking oscillator is fed to the device Q to turn it off. The first clock pulse at A triggers a sawtooth generator 11 and monostable multivibrator 12. When the ramp voltage produced by the sawtooth generator 11 reaches the breakdown voltage of the device, the change in potential at the terminal F produces a pulse at the output of the differentiator 17. The output pulse from the monostable circuit 12 and from the differentiator 17 pass via gate 14 to trigger the blocking oscillator 16 which produces an output to further turn off the device Q. This process is repeated as each succeeding clock pulse triggers the sawtooth generator and monostable circuit 11 until a breakdown voltage (Vd, Fig. 9, not shown) in excess of the desired value is reached. This voltage provided by the sawtooth generator 11 occurs at the end of the pulse provided by the monostable circuit 12 so that the gate 14 remains closed and no further turn-off pulses are produced by the blocking oscillator 16. The diode CR1 prevents the turn-off pulses produced by the blocking oscillator 16 from passing to the differentiator 17. The resistor R5 is chosen so that the current through the device Q on the sawtooth generator output voltage exceeding the breakdown voltage level of the device Q is insufficient to affect the state of the device. In a circuit for indicating the state of the device Q (Fig. 6, not shown), the current through a relay coil (K) either connects lamp (P1 or P2) to the battery (B) depending on whether the device is in a low- or high-resistance state.