Patent GB-753014-A (GB)
Title: Semiconductor electric signal translating devices
IPC: H03K3/313
Filed: 1953-07-17
Abstract: 753,014. Transistor two-stable state circuits. WESTERN ELECTRIC CO., Inc. July 17, 1953 [July 22, 1952], No. 19880/53. Class 40 (6). A signal translating device comprises a pair of transistors of opposite conductivity types, with means connecting the base of each to the collector of the other, and a connection to each emitter. The emitter connections can be used to provide a two-terminal bi-stable state switching circuit, or a constant current device. In Fig. 1, a PNP and an NPN junction transistor with their base zones (B10, B11) and collector zones (C10, C11) interconnected, have leads 12 and 13 connected to their emitter zones E10, E11, and to their base zones via resistors 14 and 15 respectively. A bias source 16 in series with load 17 is connected between leads 12 and 13, and resistors 14 and 15 provide the emitter-base bias for each transistor. The combination effectively provides a transistor having a current amplification greater than that of the individual transistors. The voltage-current characteristic of the terminals 12 and 13 is shown to consist of a high positive resistance portion, followed by a negative resistance portion and then a low positive resistance portion, so that the arrangement has low current and high current stable states. The arrangement may be used as a switch in a telephone system, triggering voltages being applied to terminals 12 and 13 to switch from one stable state to the other. The value. of the required triggering voltage may be predetermined accurately by the use of semi-conductor diodes having prescribed Zener voltages at which their reverse current suddenly increases to a large value; such diodes are described in Specification 697,880. Fig. 2 shows such a diode connected in series with resistance 15, so that when the Zener voltage is reached, a large current passes through resistance 15, increasing the positive bias of emitter E11, which increases the current through collector C11 and the voltage across resistance 14, which reacts on transistor 10 in a similar way, to provide a cumulative effect to switch the arrangement to the high current stable state. In an alternative arrangement, the diode is connected between the collector zones, and in. a further arrangement (Fig. 4, not shown) a high resistance shunted by a condenser is connected in series with the diode so that triggering may be effected by short pulses. In a further modification, a diode is connected in series with each emitter zone, which allows for lower values of current in the stable states. Fig. 6 shows a constant current arrangement, having a diode connected across each emitter junction, the Zener voltage of the diode being larger relative to the emitter-base bias in the high current state, so that the emitter currents, and therefore the collector currents, are substantially constant provided the applied voltage between terminals 12 and 13 is sufficient to produce the critical voltages across diodes 18A, 18B. The transistors may consist of point contact types such as described in Specification 694,021. Specifications 700,231, 727,678, [Group XXXVI], and 753,013 also are referred to.