baber/WOPTO huggingface dataset:
Patent JP-S54128289-A (JP)
Title: Test method for semiconductor pellet
Inventor: SUMIZAWA KENPO
IPC: H01L21/66
Filed: 1978-03-29
Abstract: PURPOSE: To ensure a high mutual contact to eliminate the local heat generation when carrying out the electric conduction test by placing the semiconductor pellet on the metal-made stage, by providing an elastic thin mat featuring high heat and electric conductivity between the pellet and the stage.  
     CONSTITUTION: Elastic thin mat 2 featuring high heat and electric conductivity and composed by mixing the copper powder into the rubber substrate material is laied on metal stage 1 for the test of the semiconductor pellet. Then pellet 3 to be tested is placed on mat 2. Under these conditions, the current is flown to both pellet 3 and stage 1 via a probe to carry out the prescribed test. In such way, some unevenness on stage 1, if any, can be absorbed due to the elasticity of mat 2. Thus, the local heat generation is eliminated, increasing the accuracy of the test data. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-S56133128-A (JP)
Title: Forming method of frp product with pattern
Inventor: MAEDA NORIO
IPC: B29C70/06
Filed: 1980-03-19
Abstract: PURPOSE: To form precisely the boundary part of a pattern, by fixing a pattern die on a molding die with an appropriate gap in-between, applying a colored gel coat resin through holes on the pattern die and applying a different colored resin when the die are removed.  
     CONSTITUTION: A pattern die 2 having a number of through holes 3 thereon and leg part 4 of an appropriate length suspended monolithically from a reverse side thereof is mounted and fixed to a fixed position on a molding die 1 treated preliminerily with a mold release agent, with an appropriate gap l to be formed between the molding die 1 and the pattern die 2. Then an appropriate amount of a colored gel coat resin 5 is applied on the surface of the pattern die 2, with the surface of the molding die 1 to be coated through the through holes 3. After the pattern die 2 is removed, the above-mentioned resin 5 on the molding die 1 is coated with an appropriate thickness of a different colored gel coat resin 6. Then after the resins 5, 6 are hardened, an FRP is laminated thereon with the die removed thereafter. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H09210564-A (JP)
Title: Exhaust gas dry type dust removing apparatus
Inventor: YAMAMOTO TETSUYA
IPC: F27D17/00
Filed: 1996-01-31
Abstract: PROBLEM TO BE SOLVED: To provide an exhaust gas dry type dust removing apparatus which suppresses the pressure loss and enhances the dust removing efficiency by reducing the thickness of the moving layer to remove the exhaust gas and dusts generated in sintering and manufacturing steps. SOLUTION: This exhaust gas dry type dust removing apparatus having a cross flow type moving layer comprises an exhaust gas introducing unit 3 formed between louvers 2a, 2b,... at an oblique angle βlarger than the angle αof repose of particulate substance to be used and less than 90 degrees at the oblique angle of the louvers 2 mounted at the inlet side of the layer 1, and exhaust gas outlet side louvers 4 opposed to the inlet side louvers having upper stage louvers 5a, 5b,..., installed in parallel with the angle of repose formed at the same level as the position of the substance flow formed on the inlet side louver and lower stage louvers 6a, 6b,... installed in parallel with the louvers 2.
Patent JP-H07243934-A (JP)
Title: Supersonic wind tunnel
Inventor: NOMOTO HIDEKI
IPC: G01M9/04
Filed: 1994-03-07
Abstract: PURPOSE:To attain the desired Mach number merely via the change of the angle of a measurement section by providing the measurement section arranged bendably against a nozzle section and adjustably for the bend angle. CONSTITUTION:A nozzle section 1 and a measurement section 2 are connected by a rotary hinge 7 so that the bend angle 3a can be freely changed. The range from the hinge 7 to the opposite side is a bend section 5 where the nozzle section 1 and the measurement section 2 meet not to be overlapped when the hinge 7 is rotated. A gap 12 and the second passage 6 are provided on a wind tunnel wall on the opposite side to the hinge 7 by a shielding plate 21 for preventing the nozzle section 1 and the measurement section 2 from structurally interfering with each other due to rotation and for preventing the shock wave generated by the hinge 7 from being reflected by the wall on the opposite side. The first passage 15 which is a test region is not affected by the reflected shock wave 13, and a good flow field can be generated.
Patent JP-H03242267-A (JP)
Title: Decorating method by bead coating
Inventor: TAKAHANE MASATO
IPC: B05D5/06
Filed: 1990-02-16
Abstract: PURPOSE:To make an article look more attractive by uniformly bonding high- refractive index extremely small beads on the bright metallic layer provided on the surface of the article and then forming a surface layer consisting of a surface smoothing coating on the beads. CONSTITUTION:An article 1 such as the vessel and ornamental article of glass, metal, plastics, etc., is ion-plated with aluminum or chromium to form a bright metallic layer 2. An adhesive acrylic resin coating is then applied on the layer 2 by air spraying, etc., to form an adhesive layer 3. The high-refractive-index extremely small glass beads 4 are then deposited on the entire or specified surface of the still undried layer 3, and the layer 3 is dried to fix the beads 4. The beads 4 are further coated with a coating consisting of an acrylic resin and a curing agent therefor, and a surface smoothing layer 5 is formed.
Patent JP-2000235122-A (JP)
Title: Optical parts housing device and method for removing wiring of optical parts housed in optical parts housing device
Inventor: NARAOKA SEIICHI
IPC: G02B6/00
Filed: 1999-02-15
Abstract: PROBLEM TO BE SOLVED: To provide an optical parts housing device which facilitates the removal of wiring between optical parts and is high in the reliability of optical connection of the optical parts to each other. SOLUTION: Connection relay parts 39 having junctures 38 of the number corresponding to the number of respective optical fiber junctures 40 and 41 are disposed between the optical fiber junctures 40 of a splitter module 3 and the optical fiber junctures 41 of an optical fiber branching module 4. First optical fibers 6a drawn out of the respective optical fiber junctures 40 of the splitter module 3 are nonattachably and nondetachably connected to second optical fibers 6b in the respective junctures 38 of the connection relay parts 39. The second optical fibers 6b are connected to the optical fiber junctures 41 of the optical fiber branching module 4.  The second optical fibers 6b are disconnected from the first optical fibers 6a at the junctures 38 and the second optical fibers 6b are hauled and taken off from the optical fiber branching module 4 side when the wiring between the splitter module 3 and the optical fiber branching module is removed.
Patent JP-H01209703-A (JP)
Title: Resistance value control apparatus of thick film resistor
Inventor: MIFUKU HIDEFUMI
IPC: H01C17/24
Filed: 1988-02-18
Abstract: PURPOSE:To perform control readily at a low cost even if the width of a thick film resistor is decreased and to prevent decrease power allowance value, by setting the depth of a groove that is formed in the thick film resistor so that the depth is less than the film thickness, changing a solid resistivity, and continuously oscillating laser light which reduces the resistance value. CONSTITUTION:For example, when a thick film resistor 1 comprises ruthenium oxide, the chemical state of the ruthenium oxide is changed by the projection of laser light 5. Thus, the inherent solid resistivity of the ruthenium oxide is changed, and resistivity is decreased. The decreasing amount of the resistance value depends on the projecting conditions of the laser light 5, e.g., the output, the scanning speed and the like. Therefore, the resistance value of the resistor 1 can be controlled by the projecting conditions of the laser light 5, and the resistor 1 having the desired resistance value can be obtained. A penetrating groove is not formed in the thick film resistor obtained in this way. Therefore, the power allowance value of the resistor is hardly reduced in comparison with the power allowance value before the laser light is projected.
Patent JP-H01209781-A (JP)
Title: Semiconductor laser device
Inventor: NANBARA SEIJI
IPC: H01S5/00
Filed: 1988-02-18
Abstract: PURPOSE:To form a structure which can control a threshold current by forming the block layer of a semiconductor laser along a specific angle direction to the front end face. CONSTITUTION:In a semiconductor laser (LD) having a resonator length L and the stripe width W of a block layer, the block layer is formed along the angle direction of tan<-1>(L/3/4W)<alpha<tan<-3>(L/3/4W)+90 deg. with respect to the front and rear end faces of the LD. The current applied to the laser flows to a current injection region not disturbed by the block layer, and a laser light generated in the current injection region is radiated externally from a light emitting region. In this case, a minimum application current (threshold current) necessary to generate a laser light is determined by the structure of the laser and particularly front and rear end face reflectivity. When the block layer is formed at an angle direction alpha with respect to the front end face, it so operates as to apparently reduce front end face reflectivity Rf and rear end face reflectivity Rr, thereby controlling a threshold current I+r.
Patent JP-H09229914-A (JP)
Title: Method and device for measuring surface wave sound speed
Inventor: MOGI RYOHEI
IPC: G01N29/00
Filed: 1996-02-23
Abstract: PROBLEM TO BE SOLVED: To measure surface wave sound speed with precision and without skill by making judgement for position on the time axis of a rising part and zero-cross point of wave form easy and sure. SOLUTION: From the control of a system control part 13, a moving mechanism part 11 sequentially changes the interval of super sonic wave sending/ receiving devices 12a and 12b. The reception signal obtained by sending/receiving super sonic wave pulse at this interval is converted into digital signal with an A/D converter 17, and then stored in a wave form storing device 13a. The reception wave form data read out of the wave form storing device 13a by a personal computer 19 is represented with the interval of super sonic wave sending/receiving devices 12a and 12b represented on a horizontal axis and the propagation time of reception wave form on the vertical axis, and the figure representing the amplitude of reception wave form as light and dark, ranging from black color to white color, is generated, and displayed on a display 19a.  Further, the inclination of the part where the identical phase part where gradation of light/dark is equal becomes linear, in the figure displayed on a screen, is calculated, for calculating the sound speed of surface wave.
Patent JP-S63204007-A (JP)
Title: Burner device for pulverized coal combustion
Inventor: TSUMURA SHUNICHI
IPC: F23Q7/06
Filed: 1987-02-19
Abstract: PURPOSE:To enable secure and stable direct ignition to pulverized coal without generating such thermal NOx as that in a plasma arc method by installing a heater heating a mixture at the downstream of a back fire preventing plate and an ignitor igniting the mixture after heating. CONSTITUTION:The heating value of a heater 5 is so controlled that the generated amount of CH4 satisfies the necessary concentration for ignition with a controller 15 according to the signal from a gas sensor 6 installed at the downstream part of the heater 5. Danger in case when pulverized coal 9 is ignited in the inside of the heater 5 by any chance is prevented and heat loss can be controlled to a minimum by making the heating source for a mixture approach an ignition region as near as possible. Because the mixture of which volatile component is sufficiently vaporized by the heater 5 collides with the heating element 10 for ignition heated at 1000-1200 deg.C and placed at the downstream part of a flame holder 3, the volatile component in the pulverized coal is continuously ignited to form flames. Further those flames propagate and the whole supplied pulverized coal is ignited.
Patent JP-2000235958-A (JP)
Title: Simulation method for semiconductor manufacturing process and its device
Inventor: KIMURA MITSUNORI
IPC: H01L21/265
Filed: 1999-02-15
Abstract: PROBLEM TO BE SOLVED: To effectively shorten a calculating time as a whole by avoiding any repetitive calculations, even when conditions are changed in a process in which a relatively long calculating time is required, such as annealing or oxidization in the simulation of a semiconductor manufacturing process. SOLUTION: This simulation method for a series of semiconductor manufacturing processes having a process (for example, processes 5 and 8) whose processing time is not included in parameters and a process (processes 6 and 9) whose processing is included as one of parameters. In this case, an intermediate result is outputted each time a prescribed time 6a and 6b (or 9a) passes in the middle of the simulation of the process 6 (or the process 9), whose processing time is included as one of parameters and plural simulation results with different processing time parameters are obtained.
Patent JP-S60182680-A (JP)
Inventor: MITO SEIICHI
IPC: H01R43/00
Filed: 1984-02-29
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S63202918-A (JP)
Title: Ozone decomposing apparatus
Inventor: ONOE TERUHIKO
IPC: H01L21/027
Filed: 1987-02-18
Abstract: PURPOSE:To remove ozone, to set an ashing temperature freely and to improve the yield of wafers by heating and decomposing ozone contained in exhaust gas and cooling and discharging heated ozone. CONSTITUTION:Since ozone is contained in exhaust gas after the ashing of a semiconductor wafer 20, exhaust gas is flowed into an ozone decomposing apparatus 24 through an exhaust pipe 23. Exhaust gas is flowed into a gas flowing pipe such as a stainless pipe 26, heated by a heating mechanism 27, and passed through the heating mechanism 27. Ozone in exhaust gas is heated and decomposed by the heating mechanism 27, and exhaust gas is cooled by a cooling mechanism 28 such as a heat exchanger and discharged. Noxious ozone can be removed and discharged by heating and decomposing the gas including ozone, and a danger by a high temperature can be eliminated because the gas after heating and decomposition is cooled and exhausted.
Patent JP-2000236023-A (JP)
Title: Wiring structure determination support apparatus and method for semiconductor integrated circuit
Inventor: KOBAYASHI SUSUMU
IPC: H01L21/82
Filed: 1999-02-15
Abstract: PROBLEM TO BE SOLVED: To help lead out and determine an optimum wiring structure of a semiconductor integrated circuit. SOLUTION: A wiring structure estimating device 103 receives actual design data of a semiconductor integrate circuit from a design data input device 101 and data of a wiring structure from a wiring structure input device 102, respectively, and calculates chip size, performance, etc., when the design data is realized as the wiring structure. An optimum wiring structure deviation device 104 drives an optimum wiring structure based on the chip size, performance, etc., calculated by the wiring structure evaluating device 103.
Patent JP-S56135385-A (JP)
Title: Loading method for heavy article aboard ship in dry dock
Inventor: KATAMOTO TAKESHI
IPC: B63B9/06
Filed: 1980-03-22
Abstract: PURPOSE: To prevent a structure built on blocks in the dry dock from tumbling by a method wherein the structure is loaded with ballast for balancing and is provided with a buoyancy before the heavy articles is loaded on the structure.  
     CONSTITUTION: The structure 3 is fabricated on the blocks placed on the bottom 1 of the dry dock, and the heavy article 4 is loaded on the structure 3. The structure 3 is loaded with ballast to satisfy the optimum condition, and sea water is introduced into the dock to provide the buoyancy for the structure. Numeral 6 represents a dry dock gate. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H0210598-A (JP)
Title: Memory device
Inventor: JIERII EI KURAIFUERUSU
IPC: G11C16/06
Filed: 1989-02-17
Abstract: PURPOSE: To program a flash memory device via a data port and to enable an erasing command port architecture by incorporating a circuit means into the same semiconductor chip as a memory executing erasing, programing and erasing/programming test in a circuit. CONSTITUTION: A data bus 20 is connected to an input/output buffer 21, and data to be inputted into a memory array 11 is connected from the bus 23a via a data latch 22. On the contrary, data to be outputted to the data bas 20 from the memory array 11 are connected to an I/O buffer 21 from a bus 23b via a sense circuit 101, thereafter data are outputted to the data 20. Input data are also connected to a command port controller 30 via the bus 23a. External signals WE and CE are further received with the command port controller 30, and control signals are fed to an address latch 13, the data latch 22, an eraser voltage generator 24, a program voltage generator 25 and an erasing/ programming test generator 26. External signals CE and DE are connected to a chip/output enable logic circuit 27.
Patent JP-S54136413-A (JP)
Title: Liquefied natural gas gasifier
Inventor: OOOKA ISAMI
IPC: F02C7/141
Filed: 1978-03-28
Abstract: PURPOSE: To increase operational efficiency, by using water as heat source and coolant as heat medium, in series-connnected intermediate heat medium type heat exchangers and multi-pipe type heat exchangers.  
     CONSTITUTION: Intermediate heat medium type heat exdhangers 1, 2 use propane as coolant and water as heat source, and heat exhanger 1 operates exchange of heat between water and coolant, and heat exchanger 2 between coolant and LNG. LNG enters heat exchanger 2 from line 8, is gasified as it passes the heat-transfer pipe, and leaves heat exhanger 2 via line 9. Next, liquefied natural gas is heated in multi- pipe type heat exchanger 3 by sea water or hot waste water drawn from line 4. Water flowing from line 5 passes line 6 and gives heat, as heat source of heat exchanger 1, to propane coolant of low solidifying-point. and by utilizfing its evaporation and condensation, the water heats LNG. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H11231334-A (JP)
Title: Electrode substrate, display device and production of electrode substrate
Inventor: MASAKI YUICHI
IPC: G02F1/1343
Filed: 1998-02-18
Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of a hillock phenomenon and the generation of silicon residues. SOLUTION: The electrodes 3 of an electrode substrate 1 formed with the electrodes 3 on the surface of a substrate 2 comprises a first layer 31 consisting of aluminum not contg. silicon, a second layer 32 consisting of aluminum contg. the silicon and a third layer 33 having molybdenum. The film thickness of the first layer 31 is specified to >=1000 Å and is made smaller than the film thickness of the second layer 32. As a result, the occurrence of the hillock phenomenon is prevented and the generation of the silicon residues is prevented even when a wet etching method is used.
Patent JP-S54128407-A (JP)
Title: Manufacture of sintered iron-cobalt product
Inventor: SAKAI TAKEAKI
IPC: B22F1/00
Filed: 1978-03-29
Abstract: PURPOSE: To manufacture magnetic alloy with low coercive force and high magnetic flux density, by use of Fe and Co with respective particle sizes of 200 mesh under and 300 mesh under in sintering powdered mixt. of Fe and Co.  
     CONSTITUTION: Fe powder of particle size 200 mesh under and Co powder of 300 mesh under are mixed half-and-half. The mixt. is put into a dies 2 and is pressure- formed with a punch 3. The molded product 1 is brought into a sintering furnace 4 filled with hydrogen, where it is sintered at 650W800°C. The diameter of the sintered product 1 shrinks slightly. The sintered molded product is returned to the dies 2, where it is pressed with the punch 3 to extend the sintered product to the original diameter. Then the molded product is brought into the sintering furnace 4 once again and is sintered at about 1,400°C to produce Fe-Co magnetic sintered alloy low in coercive force and high in magnetic flux density. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-S58154718-A (JP)
Title: Highly heat-resistant polymer and its production
Inventor: SANADA SHINICHI
IPC: C08G61/12
Filed: 1982-03-10
Abstract: PURPOSE:To produce a polymer having extremely excellent heat resistance in high yields, by subjecting a tricyclic condensed heterocyclic compound to oxidative cationic polymerization. CONSTITUTION:A highly heat-resistant polymer having repeating units of formulas IV, V and VI(wherein X, X' and X'' are each O, S, SO2, >CO, >N-R, >P-R'- or a bivalent group of formula III, wherein R is H or a 1-15C alkyl and R' and R'' are each a 1-15C alkyl) is prepared by subjecting a tricyclic condensed heterocyclic compound of formulaIor II(wherein X, X' and X'' are as defined above) (e.g., dibenzo-p-dioxine) to oxidative cationic polymerization in the presence or absence of oxygen by using a Lewis acid and a halide of a polyvalent metal in the highest valence state. This polymer has such as excellent heat stability that the heat decomposition initiation temperature is above 274 deg.C, and accordingly it is useful as a molding material required to have high heat resistance.
Patent JP-S59164328-A (JP)
Title: Aromatic polyamic acid solution composition
Inventor: INAIKE TOSHIHIRO
IPC: C08J5/18
Filed: 1983-03-08
Abstract: PURPOSE:The titled composition which is highly concentrated but yet low in solution viscosity and excellent in storage stability, prepared by dissolving an aromatic polyamic acid prepared by polymerizing a specified acid component with a specified amine component in an organic solvent. CONSTITUTION:Use is made of an aromatic polyamic acid with a logarithmic viscosity (measured at 30 deg.C in a concentration of 0.5g/100ml of N-methyl-2- pyrrolidone) of 0.1-1.5, prepared by polymerizing (A) an acid component containing at least 80mol% mixture of a 3,3',4,4'-biphenyltetracarboxylic dianhydride (derivative) and a pyrotrimellitic dianhydride (derivative) at a molar ratio of 30:70-75:25 with (B) an amine component containing at least 80mol% 4,4'-diaminodiphenyl ether in substantially equimolar amounts. Namely, 5-40wt% above polyamic acid is dissolved in an organic polar solvent (e.g., dimethyl sulfoxide) to obtain the titled composition.
Patent JP-H04254929-A (JP)
Title: Optical recording medium
Inventor: HIRATA HIDEKI
IPC: G11B7/2405
Filed: 1991-02-06
Abstract: PURPOSE:To use a large-diameter substrate for the medium, to rotate the medium at high speed, to control birefringence and to impart high output and C/N and low noise level to the medium. CONSTITUTION:A recording medium is provided on a substrate made of a polycarbonate/polystyrene graft copolymer in which the weight ratio of the polycarbonate to polystyrene is preferably controlled to 55/45-70/30 and having >=200mm diameter to constitute an optical recording medium, and the medium is rotated at >=1800r.p.m., recorded and reproduced.
Patent JP-S61195988-A (JP)
Title: Partially plating method of special steel
Inventor: SHIGA SHOJI
IPC: C25D5/02
Filed: 1985-02-26
Abstract: PURPOSE:To perform the partial plating excellent in the reliability without marring the surface characteristics of special steel by plating Ni or Ni alloy in a part surrounding preliminarily both a partial plating part and the partial plating part of a nonplating part, thereafter performing the prescribed partial plating, dissolving and removing the Ni or Ni alloy plating other than the prescribed partially plated part. CONSTITUTION:Ni or Ni alloy is plated in >=0.05mu thickness in a part surrounding preliminarily both a partial plating part and the partial plating part of a nonplating part on the surface of special steel. Then the prescribed partial plating is performed and thereafter the Ni or Ni alloy plated layer other than the prescribed partially plated part is selectively dissolved and removed.