Patent SG-11201901931U-A (SG)
Title: A method of forming nano-patterns on a substrate
Inventor: YANG KWANG WEI JOEL
IPC: G02B1/118
Filed: 2017-09-05
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property :::` , 1#1110111101110101011111 01101001111111111111111111111111111111111111110111111 Organization International Bureau (10) International Publication Number 03 (43) International Publication Date .......\"' WO 2018/044240 Al 08 March 2018 (08.03.2018) WI P0 I P C T (51) International Patent Classification: 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 B82Y 40/00 (2011.01) GO2B 1/118 (2015.01) (SG). PANIAGUA-DOMINGUEZ, Ramon; c/o Data Storage Institute, 2 Fusionopolis Way, #08-01, Innovis, Sin- (21) International Application Number: PCT/SG2017/050440 gapore 138634 (SG). KUZNETSOV, Arseniy; c/o Data Storage Institute, 2 Fusionopolis Way, #08-01, Innovis, Sin- (22) International Filing Date: gapore 138634 (SG). YU, Yefeng; c/o Data Storage In- 05 September 2017 (05.09.2017) stitute, 2 Fusionopolis Way, #08-01, Innovis, Singapore 138634 (SG). (25) Filing Language: English (26) Publication Language: English (74) Agent: SPRUSON & FERGUSON (ASIA) PTE LTD; P.O. Box 1531, Robinson Road Post Office, Singapore (30) Priority Data: 903031 (SG). 10201607372X 05 September 2016 (05.09.2016) SG (81) Designated States (unless otherwise indicated, for every (71) Applicant: AGENCY FOR SCIENCE, TECHNOLO- kind of national protection available): AE, AG, AL, AM, GY AND RESEARCH [SG/SG]; 1 Fusionopolis Way, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, #20-10 Connexis North Tower, Singapore 138632 (SG). CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FL GB, GD, GE, GH, GM, GT, HN, (72) Inventors: YANG, Kwang Wei Joel; c/o Institute of Ma-HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, terials Research and Engineering, 2 Fusionopolis Way, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, #08-03, Innovis, Singapore 138634 (SG). DONG, Zhao- MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, gang; c/o Institute of Materials Research and Engineering, Title: A METHOD OF FORMING NANO-PATTERNS ON A SUBSTRATE (54) = [Fig. 1] _ = = 0) 1b) = .f 1. 101 = Step .0 = 1 3 .,„ is i = Step 12 (d) (c) = 1 145 107 107 \ \ = N 107 = St Ria 14 N.1 , - \ = 103 = = : This application relates to a method of forming nano-patterns on a substrate comprising the step of forming a plurality of 1— H ..0 (57) 'IlL ' nanostructures on a dielectric substrate, wherein the nanostructures are dimensioned or spaced apart from each other by a scaling factor 0 of the dielectric substrate with reference to a silicon substrate. There is also provided a method of forming a nano-patterned substrate 71' comprising the step of forming a plurality of nanostructures on a dielectric substrate, wherein said dielectric substrate comprises an ei ii- anti-reflectance layer disposed on a base substrate. There is also provided a method of forming a nano-patterned substrate comprising the 1 steps of forming a plurality of nanostructures on a dielectric substrate, wherein the dielectric substrate comprises an anti-reflectance layer 0 --.... disposed on a base substrate, wherein the nanostructures comprise a dielectric material, and wherein the nanostructures are dimensioned Ot or 1-1 spaced apart from each other by a scaling factor of the dielectric material with reference to a silicon substrate. 0 ei O [Continued on next page] WO 2018/044240 Al MIDIOMMMOIREEMOMMOHEEHOEMEMNIE OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) Published: — with international search report (Art. 21(3))