baber/WOPTO huggingface dataset:
Patent KR-20030042762-A (KR)
Title: Lighting apparatus for plasma lighting system
Inventor: MIN BYEONG OK
IPC: H01J65/04
Filed: 2001-11-23
Abstract: PURPOSE: A heat-sink structure of a lamp in an electrodeless lighting system is provided to lengthen a lifetime of an electrodeless lamp or a resonator by maximizing a surface area of a reflective shade to radiate the heat of the electrodeless lamp to the outside. CONSTITUTION: An electrodeless lighting system includes a resonator(50), an electrodeless lamp(60), and a reflective shade(130). The resonator is used for generating the electric field by electromagnetic waves generated from an electromagnetic wave generator(30). The electrodeless lamp is installed in the inside of the resonator in order to generate plasma and radiate the light. The reflective shade is mounted on a casing(10) in order to reflect the light generated from the electrodeless lamp. A surface area of the reflective shade is increased by forming a coarse portion on a surface of the reflective shade.
Patent KR-20030043446-A (KR)
Title: Semiconductor and Manufacturing Method For The Same
Inventor: KIM SEUNG HYEON
IPC: H01L23/31
Filed: 2001-11-28
Abstract: PURPOSE: A semiconductor device and a fabricating method thereof are provided to prevent a crack of a passivation layer due to an external shock and reduce the leakage current by forming sequentially a stress buffer layer and the passivation layer on a metal line of a top layer. CONSTITUTION: A top metal line(12) is formed on an upper surface of a semiconductor substrate(10). The top metal line is formed with an aluminum material. A stress buffer layer(14) is formed on an upper surface of the top metal line. The stress buffer layer is used for buffering the stress due to the top metal line. A passivation layer(16) is formed on the surfaces of the stress buffer layer and the semiconductor substrate. The passivation layer is formed with an aluminum oxide layer. The stress buffer layer is formed with the aluminum oxide layer.
Patent KR-20030047188-A (KR)
Title: Apparatus and Method For Serving Hot Swap Function In Router System Having Mid-Plane Structure
Inventor: LEE JEONG GWON
IPC: H04L12/28
Filed: 2001-12-08
Abstract: PURPOSE: An apparatus and a method for providing a hot swap function in a router system having a mid-plane structure are provided to prevent the signal distortion of a system when a line board having a physical interface is inserted and deleted. CONSTITUTION: The first bus switch(410) turns on/off connection between a CPU(403) and a mid-plane(409). The second bus switch(407) turns on/off connection between a packet processor(402) and the mid-plane(409). A bus switch controller(405) separately controls the operations of the first bus switch(410) and the second bus switch(407) according as a line board is installed or detected. A hot swap controller(406) controls a hot swap function, and supplies a power normal signal to the bus switch controller(405) when receiving a power and performing a normal operation.
Patent KR-20030048796-A (KR)
Title: a method for knock controlling at fast start of engine
Inventor: LEE GYEONG MIN
IPC: F02D45/00
Filed: 2001-12-13
Abstract: PURPOSE: A method for controlling knock in the sudden starting of an engine is provided to minimize the degradation of power performance by controlling asynchronous fuel injection and retarding the ignition time. CONSTITUTION: A method for controlling knock in the sudden starting of an engine comprises the steps of initializing all variables(S100), deciding if an engine is in the idle state(S110), deciding if a throttle valve opening degree is changed(S120), deciding if a driver has an intention of rapid acceleration(S130), deciding if the throttle valve opening degree change is kept(S132), deciding if a throttle valve opening degree change ratio is over a second reference value(S140), and outputting a control signal for unconditional asynchronous fuel injection a control signal for retarding the ignition time to all cylinders to reduce the occurrence of knock(S150).
Patent KR-20030049892-A (KR)
Title: coupling structure between Braun tube and display board
Inventor: YOO SEOK BEOM
IPC: H04N5/645
Filed: 2001-12-17
Abstract: PURPOSE: A combination structure of a Braun tube and a video part substrate is provided to shorten the length of stem pins and reduce the combined thickness of the Braun tube and the video part substrate by directly combining a base with a through-hole of a socket and the video part substrate. CONSTITUTION: An electron gun(4) is combined with a rear end of a Braun tube, having a plurality of protruded stem pins(6). A video part substrate(18) has a socket(12) for combining the stem pins. A base(8) is protrudedly formed at inside areas of the stem pins at a length longer than the length of the stem pins. Through-holes(14,20) are formed at the socket and the video part substrate to be combined with the base. A locking key is combined with an area where the base combined with the through-holes is protruded toward the rear surface of the video part substrate, so that the Braun tube is not moved from the video part substrate.
Patent KR-20030050984-A (KR)
Title: Method Of Fabricating Liquid Crystal Display Device
Inventor: SONG IN DEOK
IPC: G02F1/1362
Filed: 2001-12-20
Abstract: PURPOSE: A method for fabricating a liquid crystal display is provided to improve repair efficiency of a tape carrier package to increase production yield. CONSTITUTION: A gate electrode(36) and a gate pad(54) are formed on a substrate(31). A gate insulating layer(42) is formed on the substrate. A semiconductor layer(44) is formed on the gate insulating layer. Source and drain electrodes(38,40) and a data pad(56) are formed on the gate insulating layer. An inorganic insulating material is deposited on the gate insulating layer. An organic insulating material is deposited on the inorganic insulating layer. The organic insulating layer is exposed and developed to remove a portion of the organic insulating layer on the drain electrode, gate pad and data pad and to leave a portion of the organic insulating layer on the gate pad and the portion surrounding the data pad. The gate insulating layer, inorganic insulating layer and organic insulating layer are patterned using the developed organic insulating layer as a mask, to form an inorganic passivation layer(48) and an organic passivation layer(62). A transparent electrode pattern(52) is formed on the passivation layers.
Patent KR-20030053295-A (KR)
Title: Method for Transmitting Caller Number At Calling in Private Exchanger
Inventor: KWON O YUN
IPC: H04Q3/72
Filed: 2001-12-22
Abstract: PURPOSE: A method for transferring a caller number in originating a trunk from a private exchange is provided to allow a callee to identify a caller by transferring an originating subscriber number of an actual private exchange. CONSTITUTION: When a subscriber of a private exchange side picks up a receiver, a subscriber call processor of the private exchange transfers a trunk line occupation attempt to a trunk line call processor of the private exchange(311). The trunk line call processor occupies a line between a public exchange and the private exchange(312). The trunk line call processor sends a previously designated originating number sending start code + an actual caller's number of the private exchange + originating number sending type code(313-315). The public exchange recognizes a special code after the subscriber line has been occupied, collects the originating number, and waits for a number to be actually dialed. The subscriber of the private exchange dials a trunk line paging code of the private exchange and transfers a number to be paged to the trunk line call processor(316). The trunk line call processor transfers the number to a subscriber matching and call processor of the public exchange(317). The subscriber call processor transfers the number to the trunk line call processor(318). The trunk line call processor transfers the number to the subscriber matching and call processor of the public exchange(319). The subscriber matching and call processor of the public exchange receives a following number and attempts a call connection(320). When a called subscriber responds(321), a call is connected between the originating subscriber and called subscriber(322).
Patent KR-20030053750-A (KR)
Inventor: JUNG SEOK GWANG
IPC: C21B7/18
Filed: 2001-12-24
Abstract: PURPOSE: A method for controlling particle size distribution of burden in blast furnace is provided to activate the furnace wall part and improve average gas use ratio by equalizing time series particle size deviation of charging materials discharged from furnace top bunker, thereby increasing average particle size of the intermediate part on the furnace wall part. CONSTITUTION: The method is characterized in that time series particle size deviation from the initial stage of discharging of charging materials discharged from furnace top bunker to the finishing stage thereof is equalized by maintaining a ratio (D2/D1) of cone diameter (D2) at a boundary portion where upper and lower inclination angles of two-step inclination cone are transferred to diameter (D1) of discharge port of the lower part of the furnace top bunker to 1.3 or more when charging the charging materials through furnace top bunker to the inner part of which two-step inclination cone having different upper and lower inclination angles is adhered, thereby generating mass flow of the charging materials inside the two-step inclination cone and in the front part of the furnace top bunker, wherein the ratio of D2/D1 is 1.4 or more.
Patent KR-20030053968-A (KR)
Title: Method of manufacturing for sram cell
Inventor: CHOI CHI HONG
IPC: H01L27/11
Filed: 2001-12-24
Abstract: PURPOSE: A method for fabricating an SRAM cell is provided to reduce largely the area of the SRAM cell by using a pull-up device of the SRAM cell as a P-channel TFT instead of a PMOS transistor. CONSTITUTION: A gate oxide layer(2) and a gate are formed on a semiconductor substrate(1) including an isolation layer and a well. An LDD(Lightly Doped Drain) region(4) is formed at the outside of the gate by an LDD ion implantation process. A spacer(5) is formed at both sides of the gate. A source/drain region(6) is formed on the semiconductor substrate of the outside of the spacer by performing an impurity ion implantation process. An insulating layer(7) is formed on the resultant. The insulating layer is planarized by performing a CMP(Chemical Mechanical Polishing) process. The insulating layer is removed from the gate by performing an etch-back process. A gate insulating layer(8) of a P-channel TFT is deposited thereon and an annealing process is performed. A polysilicon layer(9) is deposited and crystallized on the resultant. A junction region of the P-channel TFT is formed by a doping process.
Patent KR-20030055366-A (KR)
Title: Method Of Fabricating Liquid Crystal Display Device
Inventor: JUNG HYEON SANG
IPC: G02F1/1339
Filed: 2001-12-24
Abstract: PURPOSE: A producing method of an LCD(Liquid Crystal Display Device) is provided to have a spacer of a wanted shape. CONSTITUTION: A spacer material on a nozzle of an ink-jet head is soft-baked. The soft-backed spacer material is loaded on a substrate. A spacer(58) is formed on the substrate by burning the spacer material. Thereby, the spacer is formed in the forming position exactly. Moreover, the cost is reduced and the declination is eliminated.
Patent KR-20030054504-A (KR)
Title: Apparaus and Method for reconfigurating routing case based on prefix for a blocked transmission line
Inventor: KIM BONG GI
IPC: H04L12/24
Filed: 2001-12-26
Abstract: PURPOSE: A prefix-based routing control device upon interruption of a transmission section and a method therefor are provided to transmit a prefix call to the second remote station without passing through the first remote station when a transmission line between a local station and the first station is interrupted. CONSTITUTION: A block signal detector(10) detects block signals for a specific route transmitted from a plurality of terminal exchanges(20). A traffic detector(12) detects traffic information on the specific route transmitted from the terminal exchanges(20). A routing information table(14) stores routing information stored in the terminal exchanges(20) by exchanges and prefixes. A routing information table by prefixes(18) stores information of a temporary routing path to the first and second remote stations for each prefix from the routing information table(14). And a route controller(16) performs path control to transmit a call to the second remote station by passing through the first optional remote station by using the temporary routing path information stored in the routing information table by prefixes(18), if the call is generated in the route after the block signals are detected in the specific route.
Patent KR-20030055454-A (KR)
Title: Frequency Synthesizer By Mult-Frequency Mixing
Inventor: AHN SANG BAEK
IPC: H03D7/00
Filed: 2001-12-26
Abstract: PURPOSE: A frequency synthesizer by multi frequency mixing is provided, which suppresses phase noise as increasing frequency, and prevents an intermodulation signal from being inputted to a local oscillation signal of a transceiver. CONSTITUTION: A reference signal generator(1) generates a reference signal to determine frequency stability and phase noise of a variable frequency generator(3) to be used as a reference signal of a PLL in the variable frequency generator and a fixed frequency generator(2). The variable frequency generator has a variable range capable of accommodating frequency variation required in a transmitter local oscillation signal and a receiver local oscillation signal, and enables a user to use a random frequency within the variable range of the reference signal. The fixed frequency generator maintains a separation of the random frequency generated in the variable frequency generator from the local oscillation signals, and enables the random frequency to be used as an up-conversion signal up to a desired high frequency, and generates a frequency having a better phase noise characteristics than a frequency synthesizer. The first and the second frequency multiplier(4,5) multiply a signal being output from the fixed frequency generator and the variable frequency generator. The first and the second band pass filter(6,7) filters only multiplied frequency among several frequencies like a fundamental frequency and a multiplied frequency and a triple frequency generated in the frequency multipliers. The first frequency synthesizer(8) performs frequency mixing as to the multiplied signal to obtain a frequency signal of a multiplied frequency. A frequency divider(10) divides the frequency generated in the fixed frequency generator into two. The third band pass filter(11) filters only two-divided frequency and suppresses the other signals. A band pass filter and divider(9) filters only Fm1 frequency and suppresses the other frequencies among several frequencies generated in the frequency divider, and divides the filtered signal so as to be used as a frequency component required in the transmitter and the receiver. The second frequency synthesizer(12) performs frequency mixing as to the signal(Fm1) and the two-divided signal of the fixed frequency generator to generate a signal to be used as a transmitter or receiver local oscillation frequency. And the fourth and the fifth band pass filter(13,14) filter only Fm2 and Fm1 frequency and suppress the other frequency components.
Patent KR-20030054929-A (KR)
Title: Method for forming capacitor using the Atomic Layer Deposition
Inventor: CHO HO JIN
IPC: H01L21/8242
Filed: 2001-12-26
Abstract: PURPOSE: A method for forming a capacitor by using an ALD(Atomic Layer Deposition) is provided to be capable of improving the reliability of a device by using an ALD nitride layer as a capacitor dielectric layer. CONSTITUTION: A storage node is formed at the upper portion of a semiconductor substrate. Then, a dielectric layer is formed by sequentially carrying out an ALD Si3N4(SiOxNy) thin film depositing process at the surface of the storage node and an oxidation process at the surface of the Si3N4 thin film. A plate electrode is formed on the upper portion of the dielectric layer. Preferably, the storage node is formed by depositing a plurality of layers using polysilicon in order to maximize P-concentration and increase the surface due to MPS(Meta Stable Polysilicon).
Patent KR-20030059547-A (KR)
Title: Method and apparatus for beginning broadcasting service in mobile telecommunication system
Inventor: JANG YONG
IPC: H04B7/26
Filed: 2001-12-29
Abstract: PURPOSE: An apparatus and method for initiating broadcast service through terminals in a mobile communication system are provided to control transmission of broadcast service data streams by base stations to minimize waste of wired/wireless resources. CONSTITUTION: The first message including information about broadcast service environments is received. Information about a base station capable of requesting initiation of broadcast service is extracted from the first message and stored. After idle handoff, it is confirmed if a new base station deserves to request initiation of broadcast service. In the case that the new base station is capable of requesting initiation of broadcast service, the second message that requests initiation of broadcast service is transmitted to the new base station.
Patent KR-20010100773-A (KR)
IPC: H01L27/105
Filed: 1999-03-25
Abstract: 본 발명은 각각 하나의 선택 트랜지스터(T) 및 하나의 메모리 커패시터(Cferro)로 이루어진 다수의 저항성 강유전 메모리 셀로 구성되고, 상기 메모리 커패시터의 한 전극(PL)은 고정 셀 플레이트 전압(VPLATTE)에 접속되며, 그것의 다른 전극(SN)은 제 1 도전 타입을 가진 선택 트랜지스터의 제 1 영역(1)에 접속되고, 상기 선택 트랜지스터(T) 및 메모리 커패시터(Cferro)가 제 1 도전 타입과는 반대인 제 2 도전 타입을 가진 반도체 기판 내에 또는 반도체 기판 상에 제공되는 메모리 장치에 관한 것이다.  상기 메모리 커패시터(Cferro)의 다른 전극은 저항(R)을 통해, 셀 플레이트 전압(VPLATTE)이 공급되는 라인(5)에 접속된다.
Patent KR-20010085313-A (KR)
IPC: A61K48/00
Filed: 1999-07-28
Abstract: 본 발명은 임의의 "환경 신호" 또는 자극에 반응하여 표적 유전자를 발현하도록 유전자 조작된 세포,  조직 손상, 치환 또는 강화에 사용할 수 있는 3차원 조직 또는 주사가능 제제의 생산을 위한 이의 용도, in vivo 에서 치료요법적 유전자 산물을 전달하기 위한 이의 용도에 관한다.  특히, 본 발명은 표적 유전자 산물을 발현하도록 조작된 세포와 조직 생체반응물에 관하는데, 상기 표적 유전자 산물은 선택된 생리 조건의 리포터 역할을 하거나, 유전자 산물의 결손된 또는 결핍된 발현을 증폭시키거나, 또는 임의의 "환경 신호" 또는 "자극"에 반응하여 항-바이러스, 항-박테리아, 항-미생물, 항-암 활성을 제공한다.
Patent KR-20010106425-A (KR)
IPC: B01J19/00
Filed: 1998-07-30
Abstract: 본 발명은 유기 물질에 잘 분산되어 투명 콜로이드와 세라머를 형성할 수 있는 금속 산화물 입자에 관한 것이다.  본 발명의 금속 산화물 입자는 표면이 분산 보조제에 결합되고 결정도가 55% 이상이다.  금속 산화물 입자의 미소결정의 직경은 약 4 ㎚ 이상, 약 20 ㎚ 미만이다.  또한, 본 발명은 이들 금속 산화물 입자를 사용하여 제조한 콜로이드와 세라머와, 입자, 콜로이드 및 세라머의 제조방법에 관한 것이다.
Patent KR-20020003184-A (KR)
IPC: H04L12/54
Filed: 1996-04-25
Abstract: 통신 매체의 전파 지연을 식별자를 이용하여 표시함으로써, 대역의 취득에 관한 수속을 간략화하는 것을 목적으로 한다. 
     제 2 송신 장치(814)의 대역 취득 수단(809)은, 제 1 송신 장치(806)의 송신을 정지시킨 후, 제 1 송신 장치(806)로부터 판독된 전파 지연 식별자(804)와 최대 송신 데이터량(805)을 사용함으로써, 제 1 송신 장치(806)가 사용하고 있던 대역을 구하고, 이 대역을 사용하여 송신을 개시하는 구성으로서, 송신 장치를 전환한 경우에 대역의 반환과 재취득을 수반하지 않기 때문에 필요한 수속을 간략화할 수 있다.  또한, 전파 지연 식별자를 사용함으로써 대역의 유효한 이용이 가능하게 된다.
Patent KR-20010086064-A (KR)
IPC: B65D8/16
Filed: 2000-09-27
Abstract: 구경부(口頸部 ; neck portion)와 견부(肩部 ; shoulder portion)와 동부(胴部 ; body portion)를 일체로 성형하는 보틀형 캔의 제조방법이며, 금속박판의 양면에 열가소성(熱可塑性) 수지피막층이 형성되고 또한 윤활제가 도포된 피복금속박판을 블랭킹되어 나온 컵모양으로 성형하는 공정과, 컵모양으로 성형한 것을 동부가 소경이고 박육화(薄肉化)된 바닥이 있는 원통모양인 캔으로 더욱 성형하는 공정과, 바닥이 있는 원통모양인 캔의 저부측을 견부와 미개구(未開口)된 구경부로 성형하는 공정과, 구경부가 미개구이고 동부 하단이 개구된 캔의 적어도 외면으로부터 윤활제를 제거하는 공정과, 윤활제가 제거된 동부 외면에 인쇄디자인을 행하는 공정과, 미개구된 구경부의 선단부를 절단하여 개구시키고 나서, 그 절단된 단부(端部)를 컬부(curled portion)로 성형함과 동시에, 컬부보다도 아래쪽에 나사부(threaded portion)를 성형하는 공정을 구비하고 있다. 따라서, 캔의 금속면에 보호피막을 균질(均質)의 상태로 마련할 수 있다. 또, 캔의 동부 외면에 장식을 위한 인쇄를 양호하게 행할 수 있다. 게다가, 그 인쇄공정에서의 캔의 핸들링에, 종래부터 사용되고 있는 진공(眞空 ; vacuum) 및 가압공기 분출기구에 의한 이송장치를 전용(轉用)할 수 있다.
Patent KR-20010110448-A (KR)
IPC: C08F283/12
Filed: 2000-02-25
Abstract: 본 발명에서는 메타세시스 중합가능한 시클로올레핀류 모노머와, 커플링제와, 메타세시스 중합촉매를 포함하는 시클로올레핀 조성물에 있어서, 커플링제로서 금속함유 커플링제 또는 반응성 폴리실록산을 포함하는 조성물과, 상기 조성물의 제조방법과, 당해 조성물을 포함하는 성형재료 및 그 경화물인 성형체가 제공된다.
Patent KR-20010108429-A (KR)
IPC: H01L21/3205
Filed: 2000-03-23
Abstract: 화학·기계적 연마 기술들을 사용하여 다마신 및 이중 다마신 회로를 포함하는 반도체 웨이퍼 표면들의 평탄도를 향상시키는 방법.     상기 방법은 검출된 종료점까지 과잉 표면 금속(2)을 거의 제거하는 제 1 연마 단계를 사용하는 것을 포함한다.     세척 후, 금속(2)보다 유전체(6)에 대해서 바람직하게 1.8 배 내지 4 배 이상 더 큰 선택비를 가지는 제 2 슬러리를 사용하여 화학·기계적 연마의 제 2 단계가 적용된다.     본 발명에 따르는, 연마의 상기 제 2 단계는, 디싱을 거의 제거하고 평탄도를 향상시켰다.
Patent KR-20020010654-A (KR)
Title: 터빈용 연료 조성물
IPC: C10L1/10
Filed: 2000-05-09
Abstract: 애쉬 함유 연료에 마그네슘 화합물을 첨가함으로써 터빈내에서 침적물의 형성을 감소시키고, 터빈내에서 마그네슘 화합물을 첨가하지 않은 애쉬 함유 연료를 연소시킬 때와 비교하여 터빈내에서 애쉬 함유 연료를 연소시킬 때 터빈 세척 사이의 간격을 연장시킨다.  첨가제는 바람직하게는 0.5 중량ppm 미만의 바나듐, 1 중량ppm 미만인 나트륨과 칼륨(이들의 합량 기준), 및 약 25 중량ppm 초과의 애쉬 또는 2 중량ppm 초과의 칼슘을 포함하는 애쉬 함유 연료에 효과적이다.  첨가제는 혼합후의 중량을 기준으로 마그네슘 대 애쉬의 중량비가 약 0.5 대 1 내지 약 3 대 1, 바람직하게는 약 1 대 1이 되도록 애쉬 함유 연료와 혼합된다.
Patent KR-20020012611-A (KR)
IPC: C12N15/54
Filed: 2000-06-15
Abstract: 프로모터가 기술되었다.   프로모터는 서열번호 1에 나타난 것에 상응한 뉴클레오타이드 서열 또는 그의 변이체, 상동체 또는 유도체로 구성된다.
Patent KR-20030060198-A (KR)
Inventor: KIM BYEONG SEO
IPC: H01L27/06
Filed: 2002-01-07
Abstract: PURPOSE: A semiconductor device having a resistor and a method for manufacturing the same are provided to be capable of accurately and uniformly controlling the line width of the resistor. CONSTITUTION: A semiconductor device is provided with an insulating layer(530) having a groove(413) located at the upper portion of a semiconductor substrate(100), the first and second resistor completely filled in the groove. Preferably, a storage node layer(700) is located at the same level as the insulating layer. Preferably, the storage node layer has the same thickness as that of the insulating layer. Preferably, the resistor part has the same thickness as that of the storage node layer. Preferably, the storage node layer is made of a material layer, wherein the material layer contains conductive polysilicon.
Patent KR-20030060506-A (KR)
Title: Method for admitting call in mobile communication system
Inventor: CHO JIN SEONG
IPC: H04W76/02
Filed: 2002-01-09
Abstract: PURPOSE: A method for accepting a call in a mobile communication system is provided to accept assignment of a call in consideration of QoS(Quality of Service), and to accept the call only when a transmission rate requested by a subscriber is able to be received, thereby securing the QoS. CONSTITUTION: A BTS controller maintains a standby state(400). The BTS controller checks whether a call setup request is generated(402). If so, the BTS controller checks whether a requested call supports QoS(404). If so, the BTS controller checks whether an available CE(Channel Element) exists(410). If so, the BTS calculates remaining bandwidths among assignable channel resources in a BTS(412). The BTS controller checks whether to receive a requested transmission rate according to the QoS(414). If so, the BTS controller assigns the CE(418), and assigns a BTS switch(420). The BTS controller creates a call-accept-response signal, and transmits the signal(422).
Patent KR-20020061541-A (KR)
Title: Method and driving circuit for driving liquid crystal display, and portable electronic device
Inventor: HASHIMOTO YOSHIHARU
IPC: G09G3/36
Filed: 2002-01-16
Abstract: PURPOSE: To reduce power consumption, to decrease a packaging area and packaging components, and to obtain high picture quality, in the case of performing line reverse driving and frame reverse driving of a liquid crystal display having a small screen. CONSTITUTION: The method for driving this liquid crystal display is through outputting display data D00-D05, D10-D15, D20-D25 as they are or inverted, based on a polarity signal POL inverted in each horizontal period, and also selecting a plurality of gradation voltages of either of the positive and negative polarities set to be suitable for the applied voltages-transmittance characteristics for the positive and negative polarities of the liquid crystal display, selecting a piece of gradation voltage from a plurality of the gradation voltages for the selected polarity based on the non-inverted or inverted display data D'00-D'05, D'10-D'15, D'20-D'25, and applying the one selected voltage to the corresponding data electrodes as the data signals S1-S528.