baber/WOPTO huggingface dataset:
Patent KR-20010037092-A (KR)
Inventor: CHA HEUI JANG
IPC: H04B1/40
Filed: 1999-10-13
Abstract: PURPOSE: An advertising method using communication equipment is provided to advertise effectively with the communication equipment by displaying an advertising description, an advertising logo, and an advertising picture on a liquid crystal display of the communication equipment. CONSTITUTION: When a computer server is connected to a base station, an advertising content, which are displayed on a liquid crystal display of the communication equipment, is selected. The advertising content is transmitted to the communication equipment via the base station. The communication equipment may have a memory to store the program, which allows the specified advertising content to display on the liquid crystal display. The communication equipment is a cellular phone, a personal communication system, a mobile telephone or a portable telephone.
Patent KR-20010037150-A (KR)
Inventor: PARK IN SEON
IPC: H04B1/38
Filed: 1999-10-14
Abstract: PURPOSE: A shield case for portable phones is provided to form a microphone holder to fix a microphone connected to a keypad PCB in a body in case that a shield case is installed between the keypad PCB and a main PCB. CONSTITUTION: A shield case(20) for portable phones is located between a keypad PCB(14) and a main PCB(15). A microphone(12), inserted into a microphone rubber(11) to prevent input voices from leaking out, is connected to the bottom surface of the keypad PCB(14) by an FPC(Flexible Printed Cable)(13a). The shield case(20) is fixed to the keypad PCB(14) as a protrusion(20a) formed on the upper surface of the body is inserted into a slot(14a) of the keypad PCB(14). Also the shield case(20) is fixed to the main PCB(15) as a plurality of bosses(20b) are inserted into a plurality of slots(15a). The microphone(12) inserted into a microphone rubber(11) and connected to the bottom surface of the keypad PCB(14) is inserted into a microphone holder(20c) formed in the end of one side of the shield case(20).
Patent KR-20010037386-A (KR)
Inventor: HYUN PIL SIK
IPC: G01R31/311
Filed: 1999-10-16
Abstract: PURPOSE: A wafer inspecting system and method for selectively inspecting a conductive pattern defect is provided to reduce time, manpower and cost needed for inspecting a non-conductive defect, by selectively recognizing conductive defects such as a doped polysilicon bridge or metal line bridge in inspecting a wafer. CONSTITUTION: A sensor unit(130) scans the surface of a wafer(100) by a contactless method. A resistance-inductance-capacitance(RLC) circuit unit converts a signal obtained from the sensor unit to a signal having an electrical characteristic, connected to the sensor unit. An image processing computer is connected to an apparatus for selectively inspecting a conductive pattern defect(104).
Patent KR-20010046241-A (KR)
Inventor: JO NAM JI
IPC: A21D13/04
Filed: 1999-11-11
Abstract: PURPOSE: A method for preparing a cake using rice as a main ingredient without wheat flour is provided. The cake has improved specific volume and mouthfeel and is proper for a coeliac disease patient. CONSTITUTION: The method includes the following steps of: (i) gelatinizing 60wt% of rice flour by mixing with 600-800wt% of water and heating and cooling the gelatinated rice flour; (ii) adding 8wt% of sugar and a fixed amount of growing factors of lactic acid bacterium to the gelatinated material; (iii) inoculating 2wt% of spawns of lactic acid bacterium to the rice flour and fermenting at 36deg.C for 24hr; (iv) mixing a little amount of the fermented rice flour with 200wt% of the white of egg, 5wt% of baking powder and 16wt% of sugar and stirring at a rate of 120rpm for 5min to get Meringue; (v) stirring the rest amount of the fermented rice flour and the Meringue with 30wt% of cooking oil, 1wt% of salt, 56wt% of sugar and 40wt% of rice flour at a rate of 160rpm for 10min; and (vi) fermenting the resulting dough at 36deg.C for 6hr and forming into a shape of cake before baking in an oven of 200deg.C for 30min.
Patent KR-20010047838-A (KR)
Inventor: CHO JE HUI
IPC: H01S5/32
Filed: 1999-11-23
Abstract: PURPOSE: A GaN group of semiconductor laser diode having a diffraction grating and a method for manufacturing the same are provided to form a diffraction grating for a single mode operation without re-generation after etching. CONSTITUTION: In a GaN group of semiconductor laser diode having a diffraction grating, an under clad layer(2) is formed on a substrate(10). An under waveguiding layer(3) is applied on the under clad layer. An active layer(4) is formed on the under wavguiding layer. An upper waveguiding layer(5) is formed on the active layer. An upper clad layer(6) is formed on the upper waveguiding layer. The upper structure of the upper clad layer is formed with a ridge structure. The upper plane of the upper waveguiding layer exposed to the external area of the ridge structure is formed with a diffraction grating(9) having a desire size of pitch.
Patent KR-20010062973-A (KR)
Inventor: KIM YONG SIN
IPC: H05B33/14
Filed: 1999-12-21
Abstract: PURPOSE: An AC-DC hybrid type thin film EL(ElectroLuminescence) is provided to emit natural colors of high purity and high brightness and enhance the emission efficiency by selecting a drive circuit suitable to the luminescence characteristics according to respective colors. CONSTITUTION: An AC drive type single EL for emitting a plurality of colors and a DC drive type single EL for emitting a plurality of colors are formed on one substrate(11). The AC drive type single EL comprises a transparent anode(12), a fluorescent layer(13), an electron supply and electron acceleration layer(14) and a metal cathode(16) sequentially formed in their order. The DC drive type single EL comprises a transparent anode(12), a lower insulating layer(17), a fluorescent layer(13), an upper insulating layer(18) and a metal cathode(16).
Patent KR-20010063049-A (KR)
Inventor: LEE BYEONG PIL
IPC: A23K1/10
Filed: 1999-12-21
Abstract: PURPOSE: A method and an apparatus for fermenting and drying food wastes by using a plurality of mixing, crushing and sending parts connected with each other in zigzag in a fermenting and drying chamber are provided to maximize the processing amount of the wastes and produce high-quality livestock feed. CONSTITUTION: The method is characterized by the steps of: (i) falling food wastes to the bottom by mixing, pulverizing and sending the wastes toward one side; (ii) mixing and pulverizing up and down and zigzag and sending the wastes with falling the wastes to the bottom by mixing, pulverizing and sending the wastes backward; and (iii) conveying the lowest part of the fallen food wastes to the top part and then falling and remixing and crushing the wastes. The apparatus comprises a fermenting and drying chamber of fixed area, a forward mixing, pulverizing and sending part(20) having a falling hole at one end and sending the wastes to one side and a backward mixing, pulverizing and sending part(20') having a falling hole at the other end and sending the wastes to the other side and the forward and the backward mixing, pulverizing and sending parts are continuously installed up and down and zigzag and a conveying and supplying part(30) connected to the bottom of the falling hole and the top of the forward and the backward mixing, pulverizing and sending parts respectively is also included in the apparatus for conveying the food wastes from the bottom part to one side of the top.
Patent KR-20010063976-A (KR)
Inventor: KIM JEONG U
IPC: G01H17/00
Filed: 1999-12-24
Abstract: PURPOSE: A noise quantifying method for a vehicle room is provided to achieve objective evaluation on the noise in the vehicle room by obtaining noise in the room under a predetermined vehicle running condition and computing a correlation between subjective evaluation results on the noise and objective factors. CONSTITUTION: A noise quantifying method for a vehicle room includes the steps of making a vehicle running state be a first running state in which a shift gear is in the second stage position and an engine rpm is 1500-6000rpm(S200), obtaining a room noise in the first running state, computing an average SPL, an average loudness, an average fluctuation, and an average roughness from noise generated in the first running state(S400), storing the average values in ascii files(S500), and quantifying sound factors with respect to scilent, dynamic, and pleasant states from values read from the files(S600).
Patent KR-20010060431-A (KR)
Inventor: HWANG SUN CHEOL
IPC: C03C6/00
Filed: 1999-12-24
Abstract: PURPOSE: A forming composition of silica sleeve containing fused silica powder, water-based ultrafine fumed silica powder, a basic aqueous solution, polyethyleneimine, a pH reducing agent and a drying aid and a process for producing silica sleeve therefrom are provided. Therefore, silica sleeve is obtained from the composition which is environmentally benign and economical without using harmful polymers. CONSTITUTION: The composition for forming silica sleeve contains fused silica powder having an average particle size of 1 to 40 micrometer, water-based silica slurry of ultrafine fumed silica powder having an average particle size of 7 to 100 nm, a basic aqueous solution as a dispersing agent, polyethyleneimine, a pH reducing agent and formamide as a drying aid. A mass ratio of the fused silica powder and ultrafine fumed silica powder is 40:60 to 95:5.
Patent KR-20000048425-A (KR)
Inventor: UEYAMA TAKAYUKI
IPC: G11C16/02
Filed: 1999-12-27
Abstract: PURPOSE: A nonvolatile semiconductor memory device and an eliminating method thereof are provided for the nonvolatile semiconductor memory device to collectively eliminate plural memory blocks received from the sources of an address signal and a command signal by containing plural memory blocks having nonvolatile memory cell. CONSTITUTION: A CPU checks if memory blocks appointed as eleminable memory blocks(10-0,10-1,10-n) are effectively received. Before elimination, the CPU appoints the memory blocks not effectively received. Therefore, the time for checking if the memory block is effectively received by the sources of an address signal and a command signal is reduced. Moreover, the memory blocks not effectively received are not required for being eliminated.
Patent KR-20010061189-A (KR)
Inventor: OH CHANG SEOK
IPC: G01K7/00
Filed: 1999-12-28
Abstract: PURPOSE: A heat flux measuring sensor is provided to mount a connector between a plus and a minus terminal of a thermocouple in a measuring hole of an Al bar for measuring heat flux. CONSTITUTION: A heat flux measuring sensor(30) consists of a measuring hole(34) of an Al bar(32), a connector(42) between terminal lines(38,40) of a thermocouple(36) and a fixing member(44) for fixing the terminal lines of the thermocouple to the measuring hole. The measuring hole is a through hole for passing one of the terminal lines of the thermocouple. The connector connects the plus terminal with the minus terminal of the thermocouple in a straight line. The fixing member is a resin material inserted into both sides of the fixing hole to fix the terminal lines of the thermocouple. The plus terminal is connected with the minus terminal in a straight line, and the measuring hole is penetrated to the Al bar. Then the connector is positioned in the center of the measuring hole, and both sides of the measuring hole are fixed by the fixing member. Therefore, heat flux is measured precisely.
Patent KR-20010065690-A (KR)
Inventor: KIM YEONG CHEOL
IPC: H01L23/50
Filed: 1999-12-30
Abstract: PURPOSE: A test board of a memory module is provided to detect an inferior memory module within a short time by changing a power voltage supplied to a memory module. CONSTITUTION: Signals of /RAS, /CAS, /WE, DQ, /DQM, ADD, /CS, and CLK are inputted and outputted through the first to the fourth memory module sockets(21,22,23,24). In the signals of /RAS, /CAS, /WE, DQ, /DQM, ADD of the input/output signals, the first and the second memory module sockets(21,22) are connected by the same wire and the third and the fourth memory module sockets(23,24) are connected by the same wire. The first and the second memory module sockets(21,22) of a system board(2) are commonly connected to each other without connecting the first board with the second board.
Patent KR-20010059611-A (KR)
Inventor: CHOI BYEONG DAE
IPC: H01L21/336
Filed: 1999-12-30
Abstract: PURPOSE: A method for forming a tungsten silicide gate electrode is to provide a Si-poor tungsten silicide layer and a Si-rich tungsten silicide layer thereon, thereby improving characteristics of a gate electrode and yields of a semiconductor device. CONSTITUTION: A gate oxide layer is formed on a semiconductor substrate(10). On the resultant structure is deposited a polysilicon layer(30). A Si-poor tungsten silicide layer and a Si-rich tungsten silicide layer are successively deposited on the resultant structure using SiH4 and WF6 gases. A capping layer(60) is formed on the tungsten silicide layer. A mask oxide layer is formed on the capping layer and then etched to form a gate electrode. An oxide layer spacer is formed on a region ranging from the capping layer to the gate oxide layer by an oxidation process. An annealing is implemented before or after the formation of the mask oxide layer.
Patent KR-20010059741-A (KR)
Inventor: KIM GIL HO
IPC: H01L27/108
Filed: 1999-12-30
Abstract: PURPOSE: A widely flattened MDL(Merged DRAM in Logic) and a method for manufacturing the same are provided to improve a characteristic of an MDL by forming a widely flattened MDL. CONSTITUTION: A field oxide layer(34) is formed on a semiconductor substrate(32). A transistor is formed on a DRAM cell region and a logic cell region of the semiconductor substrate(34). Spacers(40a,40b) are formed at the sides of gate electrodes(38a,38b). The first interlayer dielectric(42) is formed thereon. A contact hole is formed by performing a photo etching process. A spacer(44) is formed at a sidewall of the contact hole. A pad electrode(46) is formed by depositing and patterning a doped polysilicon layer. The second interlayer dielectric(48) and the third interlayer dielectric(50) are deposited thereon. The third interlayer dielectric(50) is removed from the DRAM cell region. A contact hole is formed by etching the second and the first interlayer dielectrics. A spacer(52a) is formed at a sidewall of the contact hole. A spacer is formed at a boundary of the DRAM cell region and the cell region. A conductive layer(54) is formed on the whole structure. A material layer(56) is formed on the conductive layer(54). A photoresist pattern(58) is formed on the material layer(56). A polysilicon layer(60) is formed on a spacer formed by the conductive layer(60) and the material layer(56). A dielectric layer(62) is formed thereon. An upper electrode is formed by depositing and patterning the doped polysilicon layer. The fourth interlayer dielectric(66) is formed thereon. The fourth interlayer dielectric(66) is flattened by performing a CMP(Chemical Mechanical Polishing) process.
Patent KR-20000029808-A (KR)
Inventor: STIENSTRA PIETER SIJBREN
IPC: C09D7/00
Filed: 1997-08-07
Abstract: PURPOSE: A method for increasing self-polishing properties of marine antifouling paints relates to the use of specific additives that increase the erosion rate of self-polishing anti fouling paints. CONSTITUTION: A method for increasing self-polishing properties of antifouling paints is characterized by the use of substituted 1,4,2-oxathiazines and their mono- and I-oxides as additive to increase the self-polishing properties of antifouling paints, the substituent in position 3 representing (a) phenyl; phenyl substituted with 1 to 3 substituents independently selected from hydroxyl, halo, C1-12 alkyl, C5-6 cycloalkyl, trihalomethyl, phenyl, C1-5 alkoxy, C1-5 alkylthio, tetrahydropyranyloxy, phenoxy, C1-4 alkylcarbonyl, phenylcarbonyl, C1-4 alkylsulfinyl, carboxy or its alkali metal salt, C1-4 alkyloxycarbonyl, C1-4 alkylaminocarbonyl, phenylaminocarbonyl, tolylaminocarbonyl, morpholinocarbonyl, amino, nitro, cyano, dioxolanyl or C1-4 alkyloxyiminomethyl; naphthyl; pyridinyl; thienyl; furanyl; or thienyl or furanyl substituted with one to three substituents independently selected from C1-4 alkyl, C1-4 alkyloxy, C1-4 alkylthio, halo, cyano, formyl, acetyl, benzoyl, nitro, C1-4 alkyloxycarbonyl, phenyl, phenylaminocarbonyl and C1-4 alkyloxyiminomethyl; or (b) a substituent of the following formula: wherein X is oxygen or sulphur; Y is nitrogen, CH or C(C1-4 alkoxy); and the C6 ring may have one C1-4 alkyl substituent; a second substituent selected from C1-4 alkyl or benzyl being optionally present in position 5 or 6; and the additive being used in an amount of 0.5 to 9.9 wt%, based on the total weight of the dry mass of the composition.
Patent KR-20000035929-A (KR)
Title: Tablet with controlled release of alfuzosine chlorydrate
Inventor: MAGGI LAURETTA
IPC: A61K9/20
Filed: 1997-08-22
Abstract: PURPOSE: A pharmaceutical composition which contains controlled release of alfuzosine chlorhydrate and tablets is provided, which can be absorbed into stomach. CONSTITUTION: A tablet consists of: a) a first layer (1) capable of swelling noticeably and rapidly in contact with aqueous biological liquid: (b) a second layer (2) adjacent to or superposed on the first layer, in which is carried the alfuzosine chlorhydrate, this layer being formed with hydrophilic polymers and other auxiliary substances, to give to the preparation suitable compressibility properties and to enable the release of the alfuzosine chlorhydrate in a predetermined lapse of time; c) and optionally a third layer (3) obtained by compression and applied on layer (2), generally consisting in particular of hydrophilic polymers which gel and/or swell and then can be optionally eroded and acting as a barrier modulating the release of the alfuzosine of layer (2), layer (3) being almost impermeable to the passage of the active substance.
Patent KR-20000068534-A (KR)
Title: 자동차 유리창용 와이퍼 블레이드
IPC: B60S1/38
Filed: 1998-06-18
Abstract: 자동차의 유리창을 청소하기 위한 와이퍼 블레이드는 자동차상에서 안내되는 구동 와이퍼 아암(18)상에 배열된 매칭 커플링 수단에 커플링 수단에 의해 연결될 수 있다. 와이퍼 블레이드측 커플링 수단은 와이퍼 블레이드의 스트립형 신장된 탄성 캐리어 요소(12)의 중앙 부분에 배치된다. 신장된 고무 탄성 와이핑 스트립(14)은 와이핑될 유리창과 대향하는 캐리어 요소(12)의 측면상에 배열되고, 캐리어 요소(12)의 종축과 실질적으로 평행하게 연장하도록 유리창상에 설정될 수 있다. 유리창위에서 종방향으로 횡으로 슬라이딩할 수 있는 와이퍼 블레이드는 와이퍼 블레이드의 슬라이딩 방향에서 연장하는 축(40)을 중심으로 와이퍼 아암에 대해 선회할 수 있다. 특히 낮은 형상을 갖는 와이퍼 블레이드는 캐리어 요소(12)가 금속으로 제조되고, 선회축(40)의 슬라이딩 평면과 와이핑될 유리창(20)의 표면 사이의 거리가 상기 표면(22)과 유리창에서 이격된 캐리어 요소(12)의 표면(11) 사이의 거리이하(44)일 때 얻어진다.
Patent KR-20010014103-A (KR)
Inventor: JOHANSSON TED
IPC: H01L29/40
Filed: 1998-05-25
Abstract: The present invention relates to a vertical bipolar power transistor primarily intended for radio frequency applications and to a method for manufacturing said bipolar power transistor. The power transistor comprises a substrate (13), a collector layer (15) of a first conductivity type on the substrate, a base (19) of a second conductivity type electrically connected to the collector layer, an emitter (21) of said first conductivity type electrically connected to the base, said base and said emitter each being electrically connected to a metallic interconnecting layer (31, 33), said interconnecting layers (31, 33) being at least in parts separated from the collector layer (15) by an insulation oxide (17). According to the invention the power transistor substantially comprises a field shield (25) electrically connected to the emitter, and located between the metallic interconnecting layer of the base and the insulation oxide.
Patent KR-20010068530-A (KR)
Title: Fault correction circuit of 3-phase brushless DC motor
Inventor: BAEK IN CHEOL
IPC: H02P6/00
Filed: 2000-01-06
Abstract: PURPOSE: An erroneous operation correction circuit for three-phase brushless DC motor is provided to achieve an in-advance prevention against erroneous operation of the motor, by fixing the problem code occurred during the starting of the motor. CONSTITUTION: A correction circuit comprises a circuit code converting unit(10) for receiving a signal output from a hall element arranged in the three-phase brushless DC motor and converting the received signal into other codes; a multiplexer(20) for receiving signals output from the circuit code converting unit and the hall element, and outputting a signal for driving a motor; a logic circuit unit(40) for outputting a low or high level signal in accordance with the output signal from the hall element; and a latch unit(30) for receiving the signal output from the logic circuit unit, and outputting the corresponding selection control signal to the multiplexer. The logic circuit unit includes two AND gates(40a,40b) for performing AND logic operation to the signal output from the hall element, and an OR gate(40c) for performing OR logic operation to the signal output from each of AND gates.
Patent KR-20000053450-A (KR)
Inventor: CHETLUSUNDERSRINIVASAN
IPC: H01L29/78
Filed: 2000-01-11
Abstract: PURPOSE: A method for fabricating a transistor is provided which reduces the hot carrier degradation. CONSTITUTION: A method for fabricating a transistor reducing hot carrier degradation is provided. An active device region(18) is formed on a silicon substrate. A gate conductor region(20) is formed and has gate side walls, and is separated by a gate oxide layer on a channel region defined within source and drain regions. A lightly doped drain structure and a gate side wall spacer are formed. The drain region is annealed at an interface located between the lightly doped drain structure and the gate oxide in the drain region with an amount sufficient to combine nitrogen with silicon in an atmosphere having at least one of NO, NH3 or N2O.
Patent KR-20010075942-A (KR)
Title: Ventilation system of semiconductor process apparatus
Inventor: LEE CHAE YEONG
IPC: H01L21/18
Filed: 2000-01-21
Abstract: PURPOSE: A gas supply system of a semiconductor manufacturing apparatus is provided to prevent vortex flow due to excess gas inlet into a load lock chamber in order to prevent the particle from contaminating the device. CONSTITUTION: The semiconductor manufacturing apparatus gas supply system includes an operational chamber(224), the load lock chamber(200), and a nitrogen gas supply system(202). The operational chamber performs the operation of the semiconductor device. The load lock chamber is implemented adjacent to the operational chamber to store the semiconductor device before and after the operation temporarily. The gas supply system is coupled with the operational chamber and the load lock chamber and supplies the gas to adjust the pressure inside the chamber. The semiconductor device further includes a bypass valve and a flow detector which measures the flow amount on the gas supply system.