Patent SG-11201909174Y-A (SG)
Title: Wafer based corrosion & time dependent chemical effects
Inventor: TEDESCHI LEONARD
IPC: H01L21/66
Filed: 2018-03-28
Abstract: N00 O C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 11 October 2018 (11.10.2018) WIPO I PCT omit °nolo mol mom om onno oimIE (10) International Publication Number WO 2018/187125 Al (51) International Patent Classification: HO1L 21/66 (2006.01) (21) International Application Number: PCT/US2018/024964 (22) International Filing Date: 28 March 2018 (28.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/480,337 05 April 2017 (05.04.2017) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, CA 95054 (US). (72) Inventors: TEDESCHI, Leonard; 10028 Bon Vista Court, San Jose, CA 95127 (US). MCCORMICK, Daniel, T.; 855 Folsom Street, Unit 733, San Francisco, CA 94107 (US). DIAZ, Adauto; 18700 Wooddell Court, Saratoga, CA 95070 (US). SCHWARZ, Benjamin; 5596 Lefevre Drive, San Jose, CA 95118 (US). HSIEH, Ping, Han; 488 Clabria Place, San Jose, CA 95128 (US). LEE, Changhun; 821 Figwood Court, San Jose, CA 95120 (US). (74) Agent: BERNADICOU, Michael, A. et al.; Schwabe, Williamson & Wyatt, P.C., 1211 Sw 5Th Avenue, Suite 1900, Portland, OR 97201 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: WAFER BASED CORROSION & TIME DEPENDENT CHEMICAL EFFECTS FORM I NG A SENSOR ON SUBSTRATE I 591 592 PLACING A SUBSTRATE IN A TESTING CHAMBER EXECUTING DIAGNOSTIC PROCEDURE ON THE SUBSTRATE 1_2)3 RECORDING ELECTRICAL OUTPUTS FROM THE SENSOR DURING DIAGNOSTIC PROCEDURE DETERM I NI NG A SUBSEQUENT PROCESSING OPERATION BASED ON THE RECORDED ELECTRICAL OUTPUTS FROM THE SENSOR 594 595 FIG. 5 (57) : Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an altenative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms. [Continued on next page] WO 2018/187125 Al MIDEDIMOMOIDEIREEMOMOHOMOHOHOMEEN SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))