baber/WOPTO huggingface dataset:
Patent TW-447201-B (TW)
Title: Distributed load-balancing internet servers
Inventor: LOGAN DAVID B
IPC: H04L12/00
Filed: 1999-11-29
Granted: 2001-07-21
Abstract: The actual site that serves the Web pages to a client in response to a URL domain name is automatially and transparently selected from a list of many switches each having identical data storage. In a peer hand-off process, a switch receives domain name server lookup request for a particular virtual Internet protocol (VIP) domain name. The switch examines the source IP-address for the domain name server request, examines the user's IP-address, and determines if there is server site that is geographically close to that user. The switch examines an ordered hand-off table corresponding to the domain. The switch chooses a next remote server (or its own VIP) in line based on, (a) the remote server location compared to domain name server request source, (b) the remote servers' weights, and (c) the remote server that experienced the previous hand-off. The switch then sends the domain name server response back to client domain name server with the IP-address in an ordered list.
Patent TW-579381-B (TW)
Title: Thermoplastic elastomer, hot-melt composition, process for preparing a thermoplastic vulcanizate and composite articles thereof
Inventor: JOHNSON JIM
IPC: C08L51/06
Filed: 1999-10-27
Granted: 2004-03-11
Abstract: A combination of a low flexural modulus and low crystallinity polyolefin and a functionalized polyolefin were found to result in an olefin composition with excellent adhesion to metals and polar polymers (e.g. polyesters, polyamides, etc) especially fibers therefrom. When these two polyolefins were added to a thermoplastic vulcanizate (e.g. used to partially or fully replace the semicrystalline polyolefin of a thermoplastic vulcanizate), the thermoplastic vulcanizate was found to have the necessary adhesion to form fiber reinforced thermoplastic vulcanizate.
Patent TW-522560-B (TW)
Title: Method of forming gate oxide layer in semiconductor device
Inventor: JOO MOON-SIG
IPC: H01L29/51
Filed: 1999-11-04
Granted: 2003-03-01
Abstract: A method of forming a gate oxide layer in a semiconductor device which can obtain low leakage current and high reliability with obtaining effective thickness of 40 Å or less, is disclosed. According to the present invention, a NO-oxynitride layer as the bottom oxide layer is formed on a semiconductor substrate and a tantalum oxide layer as the medium oxide layer is thereon. The oxide layer is then formed on the tantalum oxide layer and the substrate is thermal-treated under N20 gas atmosphere.
Patent TW-469281-B (TW)
Title: Amphiphilic block copolymers and a process for manufacturing mouldings therefrom
Inventor: HIRT THOMAS
IPC: C08G77/452
Filed: 2000-02-29
Granted: 2001-12-21
Abstract: The present invention relates to novel crosslinkable amphiphilic block copolymers of formula wherein the variables are as defined in the claims, a process for their preparation and their use for the manufacture of mouldings. The block copolymers of the invention are especially useful for the manufacture of ophthalmic mouldings such as in particular contact lenses.
Patent TW-419368-B (TW)
Title: A human waste management device with an unfolding means
Inventor: CINELLI FABIO
IPC: A61F5/44
Filed: 2000-01-04
Granted: 2001-01-21
Abstract: The present invention relates human waste management device, these devices comprising a bag for storage of human waste and being suitable for babies, children or adults. The invention Tesides principally in providing such devices with a means to unfold the bag (11). One preferred means is a string attached to the bag (11).
Patent TW-577744-B (TW)
Title: Medicinal compositions containing 3,6-anhydrogalactopyranose as active ingredient
Inventor: ENOKI TATSUJI
IPC: A61P37/02
Filed: 2000-01-18
Granted: 2004-03-01
Abstract: This invention provides medicinal compositions for treating or preventing diabetes, rheumatoid, diseases in which inflammation should be inhibited, diseases in which alpha-glycosidase should be inhibited, diseases in which the synthesis of prostaglandin should be inhibited, diseases in which endotoxin shock should be inhibited, diseases in which the production of interleukin should be inhibited, diseases in which the production of heme oxygenase should be induced, and diseases wherein the production of tumor necrosis factor or carcinogenesis should be inhibited, which contain as the active ingredient at least one compound selected from the group consisting of 3,6-anhydrogalactopyranose represented by formula (I), its aldehyde, its hydrate and 2-O-methylated derivatives and 2-O-sulfated derivatives thereof.
Patent TW-I262817-B (TW)
Title: Water softener tank
Inventor: BRANE EARL
IPC: B01D24/10
Filed: 2000-02-09
Granted: 2006-10-01
Abstract: A two-chambered water softener tank with a bi-directional valve for controlling the flow of water between the chamber for use with a water softener is disclosed. The tank includes an outer shell, an upper chamber located within the outer shell containing a redox medium, a lower chamber located within the outer shell and beneath the upper chamber that contains an ion exchange resin, a first port allowing water to flow into the upper chamber, a second port allowing water to flow into the lower chamber, and a third port for allowing water to flow between the upper chamber and lower chamber. The water softener tank also includes a bi-directional valve engageable with the third port for regulating flow of water through the third port from the upper chamber to the lower chamber during service of the water softener and from the lower chamber to the upper chamber during regeneration of the water softener. The bi-directional valve remains open as water flows from the upper chamber to the lower chamber. The bi-directional valve floats upwards to restrict the flow of water through the third port from the lower chamber to the upper chamber during regeneration, thereby creating a high pressure flow of water during the regeneration of the water softener to clean redox medium, such as KDF.
Patent TW-466601-B (TW)
Title: Method for producing thin film semiconductor device
Inventor: MIYASAKA MITSUTOSHI
IPC: H01L21/20
Filed: 2000-02-17
Granted: 2001-12-01
Abstract: In a fabrication process for semiconductor devices, there is a crystalline semiconductor film formed on a substrate, and the semiconductor film is an active layer of a transistor and is mainly composed of silicon. The method comprises an under-level protection layer fabrication step of forming a silicon oxide film as an under-level protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the under-level protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film; in which the semiconductor film is irradiated by a pulsed laser, and the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, by using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably.
Patent TW-460989-B (TW)
Title: Method of coating semiconductor wafer with resin and mold used therefor
Inventor: MAEDA KEIJI
IPC: H01L21/56
Filed: 2000-03-09
Granted: 2001-10-21
Abstract: In a method of coating a semiconductor wafer with a resin of the present invention, first, a semiconductor wafer (4) is placed on a bottom surface of a cavity (5) provided in a molding surface of a lower mold of a mold with its surface having a bump facing upward. Thereafter, a required amount of resin material (6) is supplied to cavity (5), and a film (7) for exposing the bump is applied to a molding surface of the upper one of the molds (1, 2). In this state, molds (1, 2) are closed together. Resin material (6) is heated to melt in cavity (5). Then, film (7) is pressed against the bottom surface of cavity (5) by a pressing member (8) provided on the molding surface of the upper mold, so that film (7) is abutted against a leading edge of bump (3) in cavity (5). A pressure is applied to the resin in cavity (5) through film (7), and the surface having the bump of semiconductor wafer (4) is coated with resin. According to the method, pressing member (8) is provided on the upper mold, so that melted resin does not enter a sliding portion. Accordingly, productivity of the resin-coated wafer increases and a resin-coated wafer with high quality and reliability is obtained.
Patent TW-457604-B (TW)
Title: Ultrasonic transducer for bonding device and manufacture thereof
Inventor: SAKAKURA MITSUAKI
IPC: B23K20/10
Filed: 2000-03-13
Granted: 2001-10-01
Abstract: The object of the present invention is to miniaturize a base end of an ultrasonic transducer provided in a bonding device. To achieve the object, a first hollow portion 100 connection with a rear end aperture is formed at a base end portion of a horn body 12, and an internal unit 14 is disposed therein. The internal unit 14 is comprised by a vibrator 16 and a pressing block by pressing and fixing the vibrator. A through-hole is formed in the central portion of the internal unit 14. A second hollow portion 102 and a third hollow portion 104 are formed in the horn body 12. A signal line can be led from the inside of the vibrator 16. As a result, the outer shape of the base end portion can be simplified and miniaturized. Since the vibrator 16 is housed inside, the vibrator 16 can be protected from thermal influences.
Patent TW-I231314-B (TW)
Title: Method for manufacturing a titanium nitride thin film
Inventor: TOBE RYOKI
IPC: C23C16/34
Filed: 2000-03-14
Granted: 2005-04-21
Abstract: A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure PTDAAT of the source-material gas is set in a range of 0 < PNH3/PTDAAT < 10 with respect to the partial pressure PNH3 of the added ammonia gas.
Patent TW-451318-B (TW)
Title: Method for forming a silicide of metal with a high melting point in a semiconductor
Inventor: HAMANAKA NOBUAKI
IPC: H01L21/8238
Filed: 2000-04-28
Granted: 2001-08-21
Abstract: A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts for prevention of refractory-metal-silicification of diffused regions between the steps of implanting impurities to form an impurity-implanted region and annealing for refractory-metal-silicification of the diffused layer. The refractory-metal-silicification of the diffused regions proceeds smoothly to thereby prevent degradation of the initial gate withstand voltage and a higher sheet resistance.
Patent TW-442905-B (TW)
Title: Method for depositing dielectric layer in shallow trench
Inventor: HUNG TUN-FU
IPC: H01L21/76
Filed: 2000-05-10
Granted: 2001-06-23
Abstract: This invention is about method for depositing dielectric layer in shallow trench and includes the following procedures. A semiconductor substrate is provided. Plural shallow trenches are formed on the semiconductor substrate. This shallow trench is treated by APM solution (mixed material of NH4OH/H2O2/H2O). A dielectric layer is deposited to uniformly cover the top of the semiconductor substrate and fill in this shallow trench.
Patent TW-536634-B (TW)
Title: Testing device and testing method for semiconductor integrated circuits
Inventor: SAKAGUCHI HIDEAKI
IPC: G01R31/316
Filed: 2000-07-17
Granted: 2003-06-11
Abstract: A testing device for LCD driver LSIs, includes: a voltage generator which generates a multiple number of expected voltages to be compared to each output voltage output from each of the output terminals and can selectively output multiple sets of reference voltages required for testing multiple kinds of semiconductor integrated circuits; a multiple number of differential amplifiers, each having two input terminals, one for receiving the output voltage output from each of the output terminals and the other for receiving the reference voltage from the reference voltage generator; and a comparator that receives the amplified output voltages from the multiple number of differential amplifiers and judges whether the amplified output voltage from each differential amplifier falls within the given voltage range.
Patent TW-I281941-B (TW)
Title: Antireflective coating for photoresist compositions
Inventor: DING SHUJI
IPC: C08F220/30
Filed: 2000-07-19
Granted: 2007-06-01
Abstract: The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or mixture of solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and does not contain a crosslinking group.
Patent TW-498490-B (TW)
Title: Method for manufacturing interconnection structure of capacitor
Inventor: JOU CHUEN-PU
IPC: H01L21/768
Filed: 2000-10-05
Granted: 2002-08-11
Abstract: A method for manufacturing interconnection structure of capacitor is disclosed in the present invention, which includes the following steps. At first, a substrate is provided. A capacitor is formed on the substrate. The capacitor is composed of a bottom metal electrode plate, an inter-metal dielectric layer formed on the bottom metal electrode plate, and an top metal electrode plate formed on the inter-metal dielectric layer. A spin-on dielectric layer is used to cover the substrate and the top metal electrode plate such that the thickness of the spin-on dielectric layer on the substrate is larger than that on the top metal electrode plate. After that, an etch-back process is conducted onto the spin-on dielectric layer so as to expose the top metal electrode plate surface. Then, a patterned metal layer is formed on both the spin-on dielectric layer and the top metal electrode plate such that the lower surface of metal layer directly contacts the upper end of the top metal electrode plate.
Patent TW-I227527-B (TW)
Title: Method of manufacturing a semiconductor device
Inventor: INOUE MASAO
IPC: H01L21/76
Filed: 2000-10-17
Granted: 2005-02-01
Abstract: There is described prevention of an increase in the thickness of an oxide film of a silicon wafer, which would otherwise be caused by eruption of gas from a CVD oxide film of another wafer during the course of a high-temperature annealing operation. A semiconductor device, which has a silicon substrate and trench isolation structures for isolating a plurality of active regions from one another, is manufactured by the steps as follows. A first and a second dielectric films are formed on the silicon substrate of one of the conductivity types. The dielectric films are removed from the areas of the silicon substrate where the trench structures are to be formed. The trench structures are formed in the uncovered areas of the silicon substrate to a predetermined depth. An oxide film is deposited into the respective trench structures by means of CVD after the oxide film has been deposited on the interior surface of the respective trench structure. The surface of the deposited oxide film is smoothed by means of removing the deposited oxide film from the silicon substrate through use of chemical-and-mechanical polishing. The second dielectric film is removed and the first dielectric film remains on the areas of the silicon substrate which are to become active regions. Then, the wafer is annealed in inactive gas at a temperature of 900 DEG C or less.
Patent TW-499624-B (TW)
Title: Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist composition
Inventor: KIM HYUN-WOO
IPC: C08K5/00
Filed: 2000-11-23
Granted: 2002-08-21
Abstract: There are provided a photosensitive polymer having a main chain consisting 3f only norbomene -type alicyclic units, a resist composition containing the photosensitive polymer and a preparation method thereof are provided. The photosensitive polymer represented by the following formula, wherein R1 is an acid-labile tertiary alkyl group, R2 is γ-butyrolactone-2-yl, γ-butyrolactone-3-yl, mevalonic lactone, 3-tetrahydrofuranyl, 2,3-propylenecarbonate-1-yl or 3-methyl-γ-butyrolactone-3-yl, R3 include a hydrogen atom, methyl, ethyl or C3 to C20 alicyclic hydrocarbon, and p/(p+q+r) is 0.1 to 0.8, q/(p+q+r) is 0.2 to 0.8, and r/(p+q+r) is 0.0 to 0.4. To prepare the photosensitive polymer, at least two different norbornene-type compounds having an ester group as a substituent are reacted in the presence of an initiator at a temperature of about 120 to 150 DEG C without a reaction catalyst.
Patent TW-498614-B (TW)
Title: Elastic surface wave device and communications equipment using the elastic surface wave device
Inventor: IGAKI TSUTOMU
IPC: H03H9/145
Filed: 2000-12-08
Granted: 2002-08-11
Abstract: An elastic surface wave device comprises a piezoelectric substrate; input and output inter-digital transducer (IDT) electrodes (11, 12) disposed on the piezoelectric substrate; a first reflector electrode (13) disposed on an output side for surface acoustic wave of the input IDT electrode (11); and a second reflector electrode (14) disposed on an input side for surface acoustic wave of the output IDT electrode (12); and can realize excellent band pass characteristics when meeting formula (1): 2(θ-5) ≤ tan<SP>-1</SP>(D/L) ≤ 2(θ+5), wherein θ: inclination for the first or the second reflector electrode in relation to a surface that is perpendicular to a propagation direction for the surface acoustic wave of the input and output IDT electrodes (DEG: exclude 0 DEG). D: distance (μm) between the centers of the widths for the propagation direction and the perpendicular direction for the surface acoustic wave of the input and output IDT electrodes. L: distance (μm) between the center of the first reflector electrode and the center of the second reflector electrode.
Patent TW-592741-B (TW)
Title: Safety intravenous catheter
Inventor: CHANG JOSEPH J
IPC: A61M25/00
Filed: 2001-03-28
Granted: 2004-06-21
Abstract: A medical IV catheter is described comprising a needle cannula having a distal point, a proximal end and further having a shaft with a circumference, a tip protector having a base the tip protector defining an opening to receive the needle cannula shaft and the tip protector is slidably mounted thereon, means coupled to the tip protector for blocking the tip protector opening so as to enclose the needle cannula distal point within the tip protector, a gasket coupled to the tip protector base defining an opening of a size to receive the needle cannula shaft, means coupled to the needle cannula shaft impeding movement of the tip protector along the needle cannula shaft beyond a predetermined distance from the needle cannula distal point, and a flash chamber coupled to the needle cannula at the needle cannula proximal end.
Patent TW-545072-B (TW)
Title: Playback apparatus and method for playback of a record carrier
Inventor: WILSON PATRICIA ELIZABETH MCDO
IPC: G11B20/12
Filed: 2000-12-29
Granted: 2003-08-01
Abstract: A playback apparatus of the invention comprises reading means (410) for reading an information stream (S0) from a record carrier (1) and demultiplexing means (430) for separating at least a first and a second sub-stream (S1, S2) from the information stream (S0), which first sub-stream (S1) comprises encoded video data and which second sub-stream (S2) comprises graphics data. The apparatus further comprises first decoding means (441) for decoding the first sub-stream (S1) and second decoding means (480) for receiving the second sub-stream (S2) and for decoding graphics data encoded according to a first format (DVD Video sub-picture format). The apparatus further comprises combining means (457) for combining the decoded video stream (S11) and the decoded graphics data (S21). The apparatus is characterized by converting means (450) for receiving a second sub-stream (S2) of graphics data encoded according to a second format (SVCD OGT-format) and characterized by selecting means (470) for selecting the converted graphics data or the data according to the first format from the second stream as input data for the second decoding means.
Patent TW-528610-B (TW)
Title: Delivery system and apparatus therefor
Inventor: MOORE IAN MARSHALL
IPC: A61M5/178
Filed: 2001-01-29
Granted: 2003-04-21
Abstract: A drug delivery system comprising self-contained storage means adapted to sealingly retain a substance of predetermined volume comprising a pre-determined dosage of a drug or drugs for transport from a first location to a second location; said storage means having actuator means engagement means at a first end thereof; said storage means having delivery means engagement means at a second end thereof.
Patent TW-494260-B (TW)
Title: Liquid crystal light source module and the backlight device thereof
Inventor: SHIE JIN-KUEN
IPC: G02F1/133
Filed: 2001-02-20
Granted: 2002-07-11
Abstract: The present invention proposes a liquid crystal light source module which comprises: a lamp cover having the first part, a second part and a third part which exists depending on the necessity, and said second part and said first part are connected, wherein at least one of the first part, the second part and the third part which exists depending on the necessity has a flat member; a reflector disposed on said lamp cover, which has two reflecting side surfaces and a curved reflecting surface; a lamp tube disposed in said reflector, wherein said flat member contacts with at least a surface at the reflecting side or curved reflecting surface.
Patent TW-519771-B (TW)
Title: Method to produce a light-emitting semiconductor-body with a luminescence-conversion element
Inventor: BOGNER GEORG
IPC: C09K11/80
Filed: 2001-03-02
Granted: 2003-02-01
Abstract: This invention described two methods to produce semiconductor elements, in which a luminescence-conversion element is applied directly on the semiconductor-body (1). In the 1st method a suspension (4), which contains adhesive-medium and at least one luminescent material (5), is applied in a layer on the semiconductor-body (1); in the next step the solvent is removed, so that only the luminescent material (5) with the adhesive-medium remains on the semiconductor-body. In the 2nd step, the semiconductor-body (1) is provided with an adhesive-medium layer (6), on which the luminescent material (5) is applied directly.