Patent SG-11201407520X-A (SG)
Title: A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact
Inventor: NOLLER BASTIAN MARTEN
IPC: C09G1/02
Filed: 2013-05-21
Abstract: (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau „ (10) International Publication Number (43) International Publication Date ^ ^ WO 2013/175396 A1 28 November 2013 (28.11.2013) WIPO I PCT (51) International Patent Classification: C09G1/02 (2006.01) H01L 21/306 (2006.01) H01L 21/304 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/IB2013/054169 21 May 2013 (21.05.2013) English (30) Priority Data: 61/650502 23 May 2012 (23.05.2012) English US (71) Applicant: BASF SE [DE/DE]; 67056 Ludwigshafen (DE). (71) Applicant (for CYonly): BASF SCHWEIZ AG [CH/CH]; Klybeckstrasse 141, 4057 Basel (CH). (71) Applicant (for MN only): BASF (CHINA) COMPANY LIMITED [CN/CN]; 300 Jiangxinsha Road, Shanghai, 200137 (CN). (72) Inventor: LI, Yuzhuo (deceased). (72) Inventors: NOLLER, Bastian Marten; Einhauser Land- straBe 50, 64653 Lorsch (DE). GILLOT, Christophe; Bergstraat 37, 3360 Bierbeek (BE). FRANZ, Diana; Gart- nerstraBe 41a, 67105 Schifferstadt (DE). (74) Common Representative: BASF SE; 67056 Ludwig­ shafen (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) — before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) \o o\ m i> i-H cn i-H o CJ o & (54) Title: A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SUR­ FACTANT (57) Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of substrate a or layer containing at least one 111-V material in the presence of chemical-mechanical a polishing composition (Ql) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (bl) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.