Patent SG-11201807152V-A (SG)
Title: Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process
Inventor: PARK JUNGRAE
IPC: H01L21/78
Filed: 2017-03-23
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property —, Organization 111111110111101110101011111010111110111011110111111011011101111101111011111 International Bureau .. ..... ..Yel j ..... .... (10) International Publication Number (43) International Publication Date WO 2017/165706 Al 28 September 2017 (28.09.2017) WIP0 I PCT (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) (72) International Patent Classification: (74) Agents: BERNADICOU, Michael A. et al.; Blakely HO1L 21/78 (2006.01) H01L 21/3065 (2006.01) Sokoloff Taylor & Zafman LLP, 1279 Oakmead Parkway, HO1L 21/76 (2006.01) HO1L 21/67 (2006.01) Sunnyvale, California 94085 (US). HO1L 21/268 (2006.01) (81) Designated States (unless otherwise indicated, for every International Application Number: kind of national protection available): AE, AG, AL, AM, PCT/US2017/023903 AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, International Filing Date: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, 23 March 2017 (23.03.2017) HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, English KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, English NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, Priority Data: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, 15/081,296 25 March 2016 (25.03.2016) US TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, Inventors: PARK, Jungrae; 1710 Triton Court, Santa GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Clara, California 95050 (US). LEI, Wei-Sheng; 1786 TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Duvall Drive, San Jose, California 95130 (US). PAPANU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, James S.; 351 Holly Drive, San Rafael, California 94903 DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (US). EATON, Brad; 563 8th Avenue, Menlo Park, Cali- LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, fornia 94025 (US). KUMAR, Ajay; 10457 Manzanita SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Court, Cupertino, California 95014 (US). GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] Title: HYBRID WAFER DICING APPROACH USING A ROTATING ETCH PROCESS FLOWCHART 100 (54) = PLASMA BEAM LASER SCRIBING PROCESS AND (57) : Methods of dicing semicon- ductor wafers, each wafer having a plurality of integrated circuits, are described. In an ex- ample, a method of dicing a semiconductor wafer having a plurality of integrated circuits 102 involves forming a mask above the semicon- ductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a rotating 104 laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integ- rated circuits. The semiconductor wafer is then plasma etched through the gaps in the 106 patterned mask to singulate the integrated cir- .. i cu l ts. '\ FORM A MASK ABOVE THE SEMICONDUCTOR WAFER ----,,..I I it PATTERN THE M ASK WITH A ROTATING LASER S BEAM LASER SCRIBING PROCESS '\.., , f. CLEAN THE EXPOSED REGIONS OF THE SEMICONDUCTOR cs.. I WAFER WITH A PLASMA PROCESS i • /. 11 .4 IN © ei 0 - N 1 8 6; ___,.../ PLASMA ETCH THE SE MICONDUCTOR WAFER THROUGH GAPS IN THE PATTERNED MASK J O WO 2017/165706 Al MIDEDIM000101011MOIDEDEMIEM100111111101111111111011110111111 Published: — with international search report (Art. 21(3))