baber/WOPTO huggingface dataset:
Patent TW-353752-B (TW)
Title: A remotely positionable and controllable underwater crawler vehicle for traversing the top edges of a top guide structure of a reactor pressure vessel of a nuclear reactor
Inventor: MCCLELLAND RICHARD G
IPC: G21C17/003
Filed: 1997-08-23
Granted: 1999-03-01
Abstract: A remotely positionable and controllable underwater crawler vehicle for traversing the top edges of a top guide structure of a reactor pressure vessel of a nuclear reactor, the top guide structure comprised of two sets of parallel grid members which are interconnected to form a lattice of rectangular shaped openings, a plurality of nuclear fuel assemblies each removable from and supported toward a lower end by a core support plate, the upper ends of the fuel assemblies extending into the rectangular shaped openings for lateral support in the top guide structure, the fuel assemblies having an outer channel wall extending from a lower end of the fuel assembly to an upper end of the fuel assembly terminating above the top edges of the top guide structure, the vehicle comprising: a central frame for supporting a plurality of wheels; a plurality of wheels for receiving a continuous track, at least one of the plurality of wheels for rolling on the top edges of the parallel grid members of the top guide structure; mounting means for mounting the plurality of wheels to the central frame; a continuous track extending around the plurality of wheels and for engaging the top edges of the parallel grid members of the top guide structure to provide movement of the crawler system vehicle along the top edges; and a drive means secured to the central frame for rotating at least one of the plurality of wheels to cause the continuous track to move and engage the top edges of the grid members.
Patent TW-442484-B (TW)
Title: New polymorphic form of doxazosin mesylate (form III)
Inventor: MOERSDORF JOHANN PETER
IPC: A61K31/505
Filed: 1997-12-03
Granted: 2001-06-23
Abstract: A new crystalline and anhydrous form of doxazosin mesylate is described. The new form is crystalline and anhydrous and is characterised by the following reflex positions of high and medium intensity: 8.49 DEG, 21.03 DEG, 11.72 DEG, 22.87 DEG, 16.03 DEG, 25.02 DEG, 18.29 DEG. Owing to its crystalline properties, the new form of doxazosin mesylate according to the invention has surprising advantages both with regard to its synthesis and for pharmaceutical processing into solid dosage forms. A process for preparing the new form of doxazosin mesylate and medicaments containing the new form of doxazosin mesylate are also described.
Patent TW-429247-B (TW)
Title: Esterizing catalysts fixed on silica gel
Inventor: PUGIN BENOIT
IPC: C07F7/22
Filed: 1997-12-18
Granted: 2001-04-11
Abstract: A process to esterizing carboxylic acid esters, characterized by using a tin(IV)-compound bound on a silica gel, containing a radical of the formula, wherin L is an at least bivalent radical and at least one of the free valences of Si in formula (I) is bound on the silica gel; this invention further relates to new Zn(IV)-compounds and their production.
Patent TW-341549-B (TW)
Title: Auxiliary gear shift operation device for bicycle, main gear shift operation device, and gear shift operation system
Inventor: OSE KENJI
IPC: B62K23/06
Filed: 1997-12-18
Granted: 1998-10-01
Abstract: An auxiliary gear shift operation device which is mountable on a bar body and coupled to a main gear shift operation device, having first and second gear shift levers to operate a derailer in two gear shiftingdirections through operation from a home position, through respective two operation cables, and mountable on a bar end separately from the main gear shift operation device; which is characterized in that he device comprises an auxiliary operation bracket mountable on the bar end; first and second auxiliary gear shift levers; and a torsional coil spring; the auxiliarygear shift levers being rotatably arranged at the auxiliary bracket, and coupled to the two gear shift levers through two operation cables; the torsional coil spring returning the auxiliary gear shift levers to respective given rotation positions.
Patent TW-364029-B (TW)
Title: A removable anchor
Inventor: SHIN JIYUNSHIYOKU
IPC: E02B/
Filed: 1998-02-09
Granted: 1999-07-11
Abstract: The present invention aims to provide a way to manually remove in a fast and simple fashion the securing metal component of PC steel wire which is a part of the pulled member and the anchor using the same. This invention comprises of load-bearing body 11 and securing metal component adhered to it. The securing metal component is made of pull-off string 40 which presses on the top of grip, wire bundle made of PC steel wires 30 which as a part of the pulled member are arranged circumferentially around the grip and pressing on top of the pull-off string, the fixating seats 21 of grooves carved at predetermined intervals on the walls of the through holes which allow the passing of wire bundles and correct the positions of PC steel wires, and can be disengaged through the pulling of the pull-off string, fixating seat support 21 that accommodates and securing the fixating seat, fixating members 22, 23 that are arranged and adhered around the edges of the top end of the PC steel wires. The rear end of the grip that has pull-off string on top and PC steel wires as a part of pulled member arranged at its periphery is secured to the top end surface of the fixating seat, and restrict the PC steel wires along the grooves of said fixating seat.
Patent TW-454002-B (TW)
Title: Process for the preparation of N-carboalkoxy-3-fluoro-4-dialkylaminoanilines
Inventor: SCHACH THOMAS
IPC: C07D295/12
Filed: 1998-03-06
Granted: 2001-09-11
Abstract: The present invention relates to a process for the preparation of N-carboalkoxy-3-fluoro-4-dialkylaminoanilines, which comprises reacting, in a first step, an orthonitrochlorobenzene of the formula (1), in which X is Cl or F, with a secondary amine of the formula (2) HNR1R2, in which R1 and R2, independently of one another, are identical or different and are an alkyl radical having from 1 to 10 carbon atoms or, together with the N atom to which they are bonded, form a ring having from 3 to 7 members, in the presence of a base in the presence or absence of a solvent at from -10 to 120 DEG C, reacting, in a second step, the 2-chloro-4-dialkylamino-5-fluoronitrobenzene with hydrogen at from 30 to 150 DEG C and from 1 to 100 bar in the presence of a base and a noble-metal catalyst and, in a third step, extracting the 3-fluoro-4-dialkylaminoaniline from the reaction mixture using an aqueous solution of an acid as a salt dissolved in water, removing the aqueous phase and reacting the 3-fluoro-4-dialkylaminoaniline salt, dissolved in water, with a chloroformate of the formula (3) CICO2R3, in which R3 is an alkyl radical having from 1 to 10 carbon atoms or an aralkyl radical having from 7 to 20 carbon atoms, at from 0 to 100 DEG C in the presence of a basic compound.
Patent TW-454114-B (TW)
Title: Resistance adjustment device for control chips on the motherboard
Inventor: LIAU YUAN-TSANG
IPC: H03H7/40
Filed: 1998-03-16
Granted: 2001-09-11
Abstract: It is a resistance adjustment device for control chips on the motherboard. BIOS will automatically detects the memory slots in usage when the computer starts, and sends control signals according to usage situations of memory slots to change resistant values of the resistance adjustment device which enables the resistance of control chips to compete with that of slots in order to greatly reduce the signal reflection situation and increase the operating bandwidth.
Patent TW-444171-B (TW)
Title: Network enhanced BIOS enabling remote management of a computer without a functioning operating system
Inventor: RAKAVY YUVAL
IPC: G06F9/445
Filed: 1998-03-20
Granted: 2001-07-01
Abstract: A method and system of communicating with a computer through a network prior to booting the computer's operating system or after operating system failure is provided. A multitasking is implemented in a network enhanced BIOS. A workstation coupled to the computer through a network may be used to access and set status on the computer prior to loading the operating system or after operating system failure. The multitasking kernel may be operated simultaneously with a conventional BIOS. The computer may be further provided with a means for alerting the workstation in the event of a POST failure or operating system crash.
Patent TW-432175-B (TW)
Title: Vacuum sealed device and vacuum treatment equipment, especially with such vacuum sealed device
Inventor: SCHERTLER ROMAN
IPC: F16J15/46
Filed: 1998-04-23
Granted: 2001-05-01
Abstract: A vacuum sealed device consists of a first sealing part, which can be expanded pneumatically or hydraulically, as well as a second sealing part, on which the first sealing part is tightened hermetically.
Patent TW-368580-B (TW)
Title: Gas filling method
Inventor: KODO KEIUN
IPC: C06B23/00
Filed: 1998-07-07
Granted: 1999-09-01
Abstract: A kind of gas filling method which is not to fill the compressed gas from the external that it is to generate the gas inside the sealed flexible chamber and easily form the pressure sealed flexible chamber and also easy for pressure configuration. And, the method can simultaneously fill gas into a plurality of independent sealed flexible chambers. As for the method of internal generation of gas in the sealed chamber, it is to heat the euthermic material located in the sealed flexible chamber with high frequency electromagnetic wave to make the material euthermic and employ the thermal decomposition gas generator to generate the gas which will fill out the sealed flexible chamber.
Patent TW-412693-B (TW)
Title: System and method for locating a route in a route table using hashing and compressed radix tree searching
Inventor: AHUJA RITESH
IPC: G06F17/30
Filed: 1998-08-11
Granted: 2000-11-21
Abstract: A method and apparatus searches table information using keys of varying lengths. Based on criteria, the method selects one of three processes for performing the search. The first routine is a reverse hash search process which is useful for searching information with few key lengths. The second process is a hierarchical search routine which is useful for searching information with many key lengths. The third process is a compressed radix tree search which is useful for searching information that presents significant time barriers to the first two routines.
Patent TW-449825-B (TW)
Title: Integrated circuit fabrication
Inventor: BITTING DONALD STEPHEN
IPC: H01L21/00
Filed: 1999-02-26
Granted: 2001-08-11
Abstract: The quartz shadow ring (e.g., 131) of a conventional plasma etching apparatus is desirably coated with material which inhibits the liberation of oxygen into the plasma. Investigation has shown that the liberated oxygen degrades etching uniformity across the wafer.
Patent TW-417401-B (TW)
Title: Method and apparatus for processing a photocurrent in both discrete and continuous time
Inventor: MORRIS TONIA G
IPC: H04N5/335
Filed: 1999-04-27
Granted: 2001-01-01
Abstract: An image sensing array having discrete and continuous time processing capabilities. Integration of a photocurrent is used to produce a high resolution digital image. By also employing continuous time processing of the photocurrent within the image sensing array, the robustness of the imaging system is enhanced. The continuous time processing permits a number of low precision calculations that may be performed within the focal plane or on the edge of the focal plane without the addition of significant circuit complexity. In one embodiment, motion representation is improved through optical flow determination based on the continuous photocurrent. These same determinations may facilitate compression of image data by reducing a search area for moving objects within the image.
Patent TW-409360-B (TW)
Title: Method for eliminating the problem of key hole in the interpoly oxide (IPO)
Inventor: HUANG GUO-CHIN
IPC: H01L21/768
Filed: 1999-05-11
Granted: 2000-10-21
Abstract: This invention discloses a method for eliminating the problem of key hole in the interpoly oxide (IPO). When fabricating the capacitor with the SAC process between the conductive layer structure, the polysilicon lower electrode of the capacitor is deposited by two stages, so as to avoid a short circuit between two separate capacitors caused by a key hole problem of the interpoly oxide (IPO) in the conductive layer structure. Firstly, there is formed the self-aligned contact of the interpoly oxide (IPO) according to a general processing step. Then, the lower electrode of the poly-silicon of the capacitor is deposited by two stages. A layer of HTF polysilicon is first deposited so as to seal the opening of the key hole due to its poor step coverage ability, and then, a layer of in-situ doped polysilicon is deposited, whereby the problem of short circuit between two separate capacitors is solved.
Patent TW-I229672-B (TW)
Title: Heterocyclic compounds as inhibitors of rotamase enzymes
Inventor: KEMP MARK IAN
IPC: C07D413/04
Filed: 1999-07-13
Granted: 2005-03-21
Abstract: Compounds of the formula (I), wherein A, Y, R, X, R1, R2, R3 and R4 are as defined above are inhibitors of rotamase enzymes in particular FKBP-12 and FKBP-52. The compounds therefore moderate neuronal regeneration and outgrowth and can be used for treating neurological disorders arising from neurodegenerative diseases or other disorders involving nerve damage.
Patent TW-446822-B (TW)
Title: Biomedical devices with antimicrobial coatings
Inventor: WILLCOX MARK
IPC: A61B19/00
Filed: 2000-01-18
Granted: 2001-07-21
Abstract: Biomedical devices with antimicrobial coatings are provided. One or more surfaces of the device are coated with lactoferrin to impart antimicrobial properties to the surface.
Patent TW-459380-B (TW)
Title: Clock synchronous system
Inventor: TODA HARUKI
IPC: G11C11/407
Filed: 1999-11-25
Granted: 2001-10-11
Abstract: The invention relates to a clock synchronous system, in which its delay circuit is used to generate the activation signal that delays 270 degree of clock signal. The receiver circuit follows the activation signal to obtain the command latch enable signal of command cycle, forming the internal signal of the corresponding command cycle. The AND circuit generates the command latch signal synchronizing with the clock signal during the period generating the internal signal. Each receiver circuit used to constitute the command receiver can only receive the signal to constitute a command when the AND circuit provides a command latch signal. Therefore, the plural receiver circuits used to constitute the command receiver is not activated normally and is activated upon receiving signal to constitute the command, which prevents the augmenting of power consumption and securely monitors plural signals at the same time.
Patent TW-I228549-B (TW)
Title: An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
Inventor: WILSON GREGORY M
IPC: H01L21/205
Filed: 1999-12-23
Granted: 2005-03-01
Abstract: This invention is directed to a novel a single crystal silicon wafer. In one embodiment, this wafer comprises: (a) two major generally parallel surfaces (i.e., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 mum from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer. This wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein (a) the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer, (b) the crystal lattice vacancies have a concentration profile in which the peak density of the crystal lattice vacancies is at or near the central plane, and (c) the concentration of crystal lattice vacancies generally decreases from the position of peak density toward the front surface of the wafer. In addition, the front surface of the wafer has an epitaxial layer deposited thereon. This epitaxial layer has a thickness of from about 0.1 to about 2.0 mum. This invention is also directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, the process comprises heating a surface of a wafer starting material to remove a silicon oxide layer from the surface. Within about 30 seconds after removing the silicon oxide layer from the surface, the surface is exposed to an atmosphere comprising silicon to deposit a silicon epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175 DEG C while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant. Afterwards, the heated epitaxial wafer is cooled at a rate of at least about 10 DEG C/sec.
Patent TW-424016-B (TW)
Title: Core compositions and articles with improved performance for use in castings for gas turbine applications
Inventor: KLUG FREDERIC JOSEPH
IPC: B22C9/04
Filed: 1999-12-20
Granted: 2001-03-01
Abstract: A method for fabricating a fired ceramic article, a green product, and a fired ceramic article, all for use as a core in the investment casting of directionally solidified eutectic and superalloy material. A ceramic slurry is prepared of alumina, aluminum and a solution of a polymerizable binder in a liquid. The slurry is extruded under low pressure into a closed cavity to form a gelled green product which is subsequently heated in an oxygen-containing atmosphere, wherein the oxygen reacts with the aluminum in the green product to form alumina which advantageously causes an increase in volume of the green product which counters the shrinkage effects of heating. The polymerizable binder is of a type which cross-links with the alumina and upon heating the liquid component of such binder vaporizes and the remaining polymer component subsequently gasifies on further heating to leave desired interstitial pores within the green product, which assist in allowing the oxygen to permeate the green product, which assists in oxidation of the aluminum through the green product. The green product is thereafter sintered to form a substantially dimensionally precise ceramic article suitable for precision-casting of superalloy materials.
Patent TW-518501-B (TW)
Title: Microprocessing device having programmable wait states
Inventor: AULAS MAXENCE
IPC: G06F13/42
Filed: 1999-12-30
Granted: 2003-01-21
Abstract: The present invention deals with the control of a data bus by a microcontroller, taking into account the fact that memory output drivers require a finite amount of time to electrically release the bus after an output operation. Each memory has an associated wait state number for selectively placing the microcontroller in a wait state of variable length subsequent to a read operation and prior to the next I/O operation.
Patent TW-441018-B (TW)
Title: Manufacturing method for etching off the sidewall structure in a self-aligned process
Inventor: LIAW JHON-JHY
IPC: H01L21/768
Filed: 2000-01-24
Granted: 2001-06-16
Abstract: There is provided a manufacturing method for etching off the sidewall structure in a self-aligned process, which can increase the gate space thereby reducing the design specification. The method comprises the steps of: (i) depositing gate material on a substrate, defining a gate area, lightly doping the drain, and growing an oxide; (ii) forming a separation layer on two sides of the gate, and performing a source and drain implantation; (iii) forming a self-aligned contact etching stop layer; (iv) forming an inter-layer of dielectric material, using the etching back or chemical mechanical polishing process to flatten the surface, and defining the self-aligned area; (v) performing a self-aligned contact etching process and removing etching stop layer of the self-aligned contact; (vi) removing the separation object in the self-aligned contact; (vii) forming a thin dielectric layer by depositing, and forming a thin separation object on the sidewall of the gate by etching back; and (viii) finally, forming a tungsten plug by depositing. In addition, the above method can be performed by using compound separation object to achieve the object of forming thin separation object. Accordingly, it is able to increase the etching margin of the self-aligned contact, and also increase the contact area of the self-aligned contact, thereby decreasing the contact resistance.
Patent TW-591549-B (TW)
Title: Image processing method to perform smoothing processing onto the boundary area surrounding the image area
Inventor: YANG PO-CHIN
IPC: H04N1/409
Filed: 2000-01-28
Granted: 2004-06-11
Abstract: The present invention provides an image processing method executed in an image processing system. The image processing system comprises a memory to store the program and the graphic image to be processed, and a processor to execute the program stored in the memory. The graphic image comprises plural pixels. The image processing method comprises: finding at least an image area having the predetermined characteristics in the graphic image based on a predetermined image area; defining the boundary area surrounding each image area based on the positioning method of a predetermined boundary area; adjusting the pixel in each image area of the graphic image based on a predetermined color parameter adjustment method; performing different but similar color parameter adjustments onto the pixels in the boundary area surrounding each image area in a predetermined smoothing way, so that the color parameter adjustment in each image area can be derived to the boundary area surrounding each image area in the predetermined smoothing way.
Patent TW-455946-B (TW)
Title: Quantum thin line producing method and semiconductor device employing the quantum thin line
Inventor: FUKUSHIMA YASUMORI
IPC: H01L29/788
Filed: 2000-02-10
Granted: 2001-09-21
Abstract: There is provided a quantum thin line producing method capable of forming a quantum thin line that has good surface flatness of silicon even after formation of quantum thin line and a complete electron confining region with good controllability as well as a semiconductor device employing the quantum thin line. A region of a nitride film 3 which covers a semiconductor substrate 1 on which a stepped portion 2 is formed is etched back with masking, consequently exposing an upper portion of a semiconductor substrate 1. Next, an oxide film 5 is formed by oxidizing the exposed portion of the upper portion of the semiconductor substrate 1, and a linear protruding portion 6 is formed on the semiconductor substrate along a side surface of the nitride film 3. Next, the oxide film 5 on the protruding portion 6 is partially etched to expose a tip of the protruding portion 6. Next, a thin line portion 7 is made to epitaxially grow on the exposed portion at the tip of the protruding portion 6. Then, after removing the nitride film 3 and the oxide film 5, there is formed a quantum thin line 7a that is insulated and isolated from the semiconductor substrate 1 by an oxide film 5A formed through oxidation of the semiconductor substrate 1.