baber/WOPTO huggingface dataset:
Patent TW-436509-B (TW)
Title: Semiconductor encapsulating epoxy resin compositions and semiconductor devices encapsulated therewith
Inventor: ASANO EIICHI
IPC: C08L63/00
Filed: 1996-03-13
Granted: 2001-05-28
Abstract: An epoxy resin composition comprising (A) 20-80 parts by weight of an epoxy resin, (B) 20-80 parts by weight of a curing agent, (C) 0.1-50 parts by weight of a phosphorus-containing flame retardant, and (D) 200-1,200 parts by weight of an inorganic filler cures into products having improved high-temperature exposure resistance, flame retardancy, and reflow cracking resistance. The composition eliminates blending of antimony trioxide and brominated compounds and is useful in encapsulating semiconductor devices for imparting high-temperature reliability.
Patent TW-333530-B (TW)
Title: Integrated process for epoxidation
Inventor: GUY L CROCCO
IPC: C07D303/04
Filed: 1996-03-15
Granted: 1998-06-11
Abstract: An integrated epoxidation process comprising (a) reacting a C3-C4 secondary alcohol and molecular oxygen in a liquid phase to form an oxidant mixture comprised of C3 -C4 secondary alcohol, a C3 -C4 ketone corresponding to the C3 -C4 secondary alcohol, and hydrogen peroxide; (b) separating substantially all of the C3 -C4 ketone from the oxidant mixture to provide a concentrated hydrogen peroxide-containing stream comprised of C3 -C4 secondary alcohol, hydrogen peroxide, and less than 1 weight percent C3 -C4 ketone; (c) reacting the concentrated hydrogen peroxide-containing stream with a C2 -C4 olefin in the presence of a titanium silicalite catalyst and a diluent comprised of methanol to form an epoxidation reaction mixture comprised of a C2 -C4 epoxide corresponding to the C2 -C4 olefin, water, methanol, and C3 -C4 secondary alcohol; (d) separating substantially all of the C2 -C4 epoxide from the epoxidation reaction mixture to form a first crude alcohol stream comprised of water, C3 -C4 secondary alcohol, methanol, and less than 1 weight percent of C2 -C4 epoxide; (e) separating substantially all of the methanol from the first crude alcohol stream to form a second crude alcohol stream comprised of water, C3 -C4 secondary alcohol, and less than 1 weight percent methanol; and (f) recycling at least a portion of the methanol separated in step (e) for use as at least a portion of the diluent in step (c).
Patent TW-448182-B (TW)
Title: Triterpene derivatives and remedy for liver diseases
Inventor: SASAKI KAZUE
IPC: C07J63/00
Filed: 1996-07-09
Granted: 2001-08-01
Abstract: A remedy for liver diseases which comprises a triterpene derivative represented by following general formula (I) or a pharmaceutically acceptable salt thereof wherein R1 represents hydroxy, alkoxy, alkylcarbonyloxy or aralkyloxy; R2 represents alkyl, -CH2OR5 (wherein R5 represents hydrogen, alkyl, aralkyl or akylcarbonyl), formyl, -COOR6 (wherein R6 represents hydrogen or alkyl) or -CH2N(R7)R8, or R1 and R2 are bonded to each other to form -O-CR9(R10)-OCH2- (wherein R9 and R10 are the same or different and each represents hydrogen, alkyl or aryl); R3 and R4 are same or different and each represents hydrogen, hydroxy, alkyl, hydroxyalkyl, formyl, -COOR11 (wherein R11 represents hydrogen or alkyl) or -OR12 (wherein R12 represents alkyl, aralkyl, C1-6 alkylcarbonyl, arylcarbonyl, alkenyl, alkenylcarbonyl or optionally substituted arylalkenylcarbonyl, or R3 and R4 together form methylene; and ""---"" represents a single or double bond, provided that when ""---"" is a double bond, then R4 is not present.
Patent TW-359649-B (TW)
Title: Automatic binding machine
Inventor: MIKUNI YOSHIO
IPC: B65B13/10
Filed: 1996-08-10
Granted: 1999-06-01
Abstract: To reduce the installation space of automatic binding machine. As a bobbin holder 31 is disposed ahead of vertical wall 9 of the rotation shaft 12, namely, the bobbin holder 31 is not protruded to the rear side of the machine frame 2 as the prior art, so the installation space of the automatic binding machine 1 can be reduced as compared with the previous time.
Patent TW-354401-B (TW)
Title: Disk cartridge device
Inventor: TANAKA SATOSHI
IPC: G11B23/04
Filed: 1996-11-04
Granted: 1999-03-11
Abstract: A disk cartridge device for freely rotatably receiving a disk at least one side of which is installed with a recording surface; comprises; recording the information signal of a disk and / or the regenerating pick-up device is installed at the signal recording surface of the disk, and a cartridge body for input/output the disk; and is slidable installed at the opening of the cartridge body, a first position for closing the opening, and a door for opening the opening, and a end portion for controlling the cover of the disk; and a guiding track is arranged on the cover and received the disk, and a guide portion is receiving in the guide recess of the guide track, and is driven by the cover.
Patent TW-379438-B (TW)
Title: Level switch circuits and the semiconductor integrated circuit
Inventor: TANAKA YASUNORI
IPC: H03K19/0185
Filed: 1997-03-14
Granted: 2000-01-11
Abstract: A kind of level switch circuit provided is made by gate oxide films. It  has a voltage resistance lower than that of MOS transistor to restrain the increase of the stationery power consumption while driving at high speed and having loads. The method includes that: (1) It has connection between high voltage (5V:VDD) source and the grounding; (2) it has the input signal IN1 from the first CMOS that has the oscillation between the low voltage (3V:VCC) source and grounding (0V); (3) connecting between 5V source and grounding; (4) It has the output signal OUT1 from the 2nd CMOS circuit 20 that the oscillation is between 5V and 0V; (5) Connecting between the 1st and 2nd CMOS circuit 10, 20, 30 and 40. All the CMOS transistors forming the circuits 10~40 are allowed to have the gate oxide films that the resistant voltage is under 5V and over 3V.
Patent TW-464507-B (TW)
Title: Hair-tonic agent pharmaceutical composition
Inventor: TAKAHASHI TOMOYA
IPC: G01N21/21
Filed: 1997-03-26
Granted: 2001-11-21
Abstract: According to the present invention, a safe and effective hair-tonic agent is provided. A hair-tonic agent which is characterized by formulating with protein C specific inhibitor is provided.
Patent TW-351753-B (TW)
Title: Apparatus for measuring vertical displacement of stage
Inventor: CHO TEI-KO
IPC: G01B11/00
Filed: 1997-04-15
Granted: 1999-02-01
Abstract: An apparatus for measuring vertical displacement of stage includes: an optical source which emits a light; a first scale glass, having a plurality of transparent and opaque regions alternatively disposed thereon to selectively diffract and reflect the light from the optical source; a second scale glass movably installed in the vertical direction of the stage, having a plurality of reflecting regions and transmitting regions alternatively formed thereon and selectively diffracting and passing the light from the first scale glass; an control circuit having a receiving portion for receiving the signal to measure the displacement of the second scale glass and controlling the vertical displacement of the stage.
Patent TW-362062-B (TW)
Title: Biaxially oriented polyester film
Inventor: OGAWA TATSUYA
IPC: B29C55/12
Filed: 1997-05-16
Granted: 1999-06-21
Abstract: A biaxially oriented polyester film which consists of a polyester composition comprising: (A) 0.001 to 0.3% by weight of crosslinked polymer particles having an average particle diameter of 0.8 to 1.6 micrometer. (B) 0.1 to 0.8% by weight of inert particles having an average particle diameter of 0.4 to 0.8 micrometer. (C) 0.05 to 1.0% by weight of inert inorganic particles having an average particle diameter of 0.01 to 0.3 micrometer and a Moh's hardness of not less than 7. The said biaxially oriented polyester film having a thickness of 3 to 25 micrometer.
Patent TW-381305-B (TW)
Title: Method for planarizing an interlayer insulating film of a semiconductor device
Inventor: LEE SAHNG-KYOO
IPC: H01L21/3105
Filed: 1997-05-19
Granted: 2000-02-01
Abstract: A method for forming an interlayer insulating film of semiconductor device is disclosed. A first interlayer insulating film is deposited on the entire top surface of a semiconductor device comprising a high step cell area and lower step periphery area, followed by the thermal treatment thereof. A second interlayer insulating film which is more resistant to etch than the first interlayer insulating film is deposited. Again, a third interlayer insulating film is deposited over the second interlayer insulating film, followed by the heat treatment thereof. These interlayer insulating films are planarized by CMP process. Upon the CMP process, the first interlayer insulating film is rapidly etched out while the second interlayer insulating film is slowly removed and this difference in etching rate allowed the polishing end point to be readily detected without an additional detector. Thus, the lower step periphery area can be prevented from being over-polished, so that a wholly planar structure free of the dishing problem can be obtained, thus facilitating the subsequent processes.
Patent TW-385556-B (TW)
Title: Semiconductor light emitting element and method for making the same
Inventor: ABE HIROMITSU
IPC: H01L33/00
Filed: 1997-05-30
Granted: 2000-03-21
Abstract: On the semiconductor substrate ( 1) constituted by n-type GaAs, when the n-type covering layer (3) and activating layer (4) and p-type covering layer (5) which are constituted by AlGaInP system compound semiconductor are growing in sequence in a growth direction and incorporated into light emitting layer (10) of laminated dual-layer different material connected structure, the carrier of p-type covering layer is growing with a density of 1x10<16>~5x10<16>cm<-3>. A window layer (6) constituted by p-type AlGaAs system compound semiconductor is growing onto the p-type covering layer, and p side electrode (8) and n side electrode (9) are respectively installed thereon. By this semiconductor light emitting structure, during semiconductor layer crystal growth the p-type impurity diffusing to activating layer is depressed to minimum, thus the semiconductor light emitting element with high light emitting efficiency and illumination can be obtained.
Patent TW-381027-B (TW)
Title: Stabilized albumin-free recombinant factor VIII preparation having a low sugar content
Inventor: NAYAR RAJIV
IPC: A61K47/18
Filed: 1997-07-07
Granted: 2000-02-01
Abstract: A stable albumin-free Recombinant Factor VIII (rFVIII) formulation in lyophilized form having both crystalline and amorphous components and comprising, when reconstituted with water, about 65 to 400 mM glycine, up to 50 mM histidine, 15 to 60 mM sucrose, up to 50 mM NaCl, up to 5 mM CaCl2 and 50 to 1500 IU/m. of rFVIII. A very preferred formulation comprises upon reconstitution with water about 290 mM glycine, 20 mM histidine, 30 mM sucrose, 30 mM NaCl, 2.5 mM CaCl2 and 50 to 1500 IU/ml of rFVIII. The residual water content of the lyophilized preparation is about 1 to 3% by weight, preferably about 1% by weight.
Patent TW-346535-B (TW)
Title: Air current control apparatus for air conditioner and methods
Inventor: YONG-WOONG BANG
IPC: F24F11/02
Filed: 1997-09-01
Granted: 1998-12-01
Abstract: An air current control apparatus for air conditioner, which comprises: a suction opening for sucking in indoor air; a heat exchanger for carrying out heat exchange with air; an air outlet for discharging the heat-exchanged air to indoors; air guide blades for controlling the flow direction of the discharged air; and an internal fan for controlling the flowrate of the discharged air; the apparatus further comprising: operation manipulating means for manipulating keys so as to supply the discharging air to any selected places to be air conditioned; control means for controlling the flow direction, flow rate and preset temperature of the discharging air to supply the air to the places in response to the selected keys; a plurality of members for adjusting the air flow direction of the discharging air in order to control angles of the blades in response to the control means; and a compressor driving means for driving a compressor so as to adjust room temperature with the preset temperature by the control unit.
Patent TW-348247-B (TW)
Title: Mode tracking transducer driver for a non-linear transducer
Inventor: JAMES GREGORY MITTEL
IPC: G08B6/00
Filed: 1997-09-18
Granted: 1998-12-21
Abstract: A mode tracking transducer driver for a non-linear electromagnetic transducer having at least a first operating mode and a second operating mode, the transducer driver comprising: a voltage controlled oscillator, for generating an output signal having a variable frequency, the voltage controlled oscillator having an input responsive to a frequency control signal for controlling a frequency of the output signal; a transducer driver, having an input coupled to the divider for driving the non-linear electromagnetic transducer continuously with the transducer drive signal; and a mode detector, coupled to the transducer driver, for detecting a mode signal indicating a mode change between at least the first operating mode and the second operating mode of the non-linear electromagnetic transducer, the mode detector being used for generating the frequency control signal for establishing a quasi-resonant operating frequency at which a tactile energy output of the non-linear electromagnetic transducer is maximized.
Patent TW-393690-B (TW)
Title: Manufacturing method for the gate of split gate flash memory with increased erasing speed
Inventor: SHIE JIA-DA
IPC: H01L21/28
Filed: 1997-10-24
Granted: 2000-06-11
Abstract: A manufacturing method for the gate of split gate flash memory with increased data erasing speed is disclosed. The two sides of floating gate have sharp corners which produces higher electrical field in near the tips of the two sides of floating gate when the data are to be erased. When the data of flash memory is being erased, the required time becomes shorter and the voltage applied by the controlling gate can be decreased. This method removes the intrinsic oxide layer naturally formed on the polysilicon surface so that the corrosion of oxide layer toward the sides is lessened during thermal oxidation of polysilicon afterward. This also forms sharper corners of polysilicon and reduces the area used by floating gate.
Patent TW-393738-B (TW)
Title: A method for manufacturing DRAM
Inventor: HUNG YUN-DING
IPC: H01L21/8242
Filed: 1997-12-12
Granted: 2000-06-11
Abstract: A method for manufacturing DRAM is to use a little photolithography steps and self-aligned method to form the elelectrode and bit line contact. Bottom electrode and bit line contact are processed by self-aligned step and formed on the same time in common step. Avoiding using separate step when patterning bottom electrode and bit line bond pad can reduce process complexity and implementation cost. In addition, the method of forming vertically extending fin-stack capacitor not only increases capacitor surface area, but also eliminates the critical dimension photolithography step.
Patent TW-432364-B (TW)
Title: A shutterless data recording cartridge and drive for using same
Inventor: MCGRATH MICHAEL C
IPC: G11B23/03
Filed: 1997-12-30
Granted: 2001-05-01
Abstract: A data recording cartridge that includes a shell that protects a data recording medium form damage and from particulate contamination is disclosed. When the cartridge is in a closed position, the top shell and bottom shell form a seal to exclude particulate matter from the data recording medium. Because the seal encloses the perimeter of the data recording medium, both internally generated and external particulates do not contaminate the data recording medium. A drive for opening and operating the cartridge is also disclosed. Another aspect of the present invention includes a hub having an enlarged center hollow, and a spindle motor having a top protrusion that fits into the enlarged center hollow. A spindle motor top bearing juts into the underside of a cavity created by the protrusion, thereby more efficiently using vertical space.
Patent TW-399373-B (TW)
Title: A transmitting system, transmitting method and a detecting method for light pulse
Inventor: TOSHIYUKI OKAYASU
IPC: H04L25/34
Filed: 1998-01-22
Granted: 2000-07-21
Abstract: This is a system and method for transmitting light pulse in high-speed; it is capable to changes the electrical pulse into light pulse. Moreover, this is a useful waveform changing method at the transmitting end, while the electrical pulse being changed to light pulse. This is a useful light intensity modulator while modulating the light and a useful light pulse detecting method. At the receiving end, while transmitting light, it is also desirable to provide a light transmitting method with high intensity and capability of transmitting the signals generated by uncertain cycle. At the transmission end, there is an upward-end detecting circuit 1 installed at the upward end of a detecting transmitting signal. A pulse generating circuit 2 for transmitting the pulse signals (b) is formed by inverted polarity pulse. A light intensity modulator circuit 3 generates light intensity modulating signal (c) according to the pulse signal (b). At the receiving end, there is AC combined receiving circuit 4 retrieving only the Ac component while receiving the light intensity modulating signal (c). An identity circuit 5 identifies the upward timing at a receiving signal. In addition, there is a similar configuration for the downward end of a signal wave of transmitting signal. It is capable of re-presenting the upward end/downward end by the timing while the transmitting signal wave is upward/downward respectively.
Patent TW-438763-B (TW)
Title: Process for producing purified terephthalic acid
Inventor: TAKANO TOSHINORI
IPC: C07C51/487
Filed: 1998-02-17
Granted: 2001-06-07
Abstract: A process for producing purified terephthalic acid capable of controlling the transmittance of the purified terephthalic acid product promptly in a simple procedure without necessitating to alter the condition of the oxidation of paraxylene to thereby permit a minute control of the process and to allow to obtain a purified terephthalic acid product with a low and constant impurity level within a certain range, which process comprises hydrogenating a crude terephthalic acid resulting from a liquid phase oxidation of paraxylene in a hydrogenation reactor 6 in the presence of a hydrogenation catalyst, followed by precipitation of the crystals 8, a solid/liquid separation 11, re-slurrying 14 of the separated crystals in water and a further solid/liquid separation 16, to obtain a purified terephthalic acid; observing the transmittance of the resulting purified terephthalic acid; and controlling the temperature of the washing water so as to maintain the observed transmittance within a predetermined range.
Patent TW-349861-B (TW)
Title: Disposable training diaper
Inventor: INOUE YASUSHI
IPC: A61F13/511
Filed: 1998-02-27
Granted: 1999-01-11
Abstract: A sort of disposable training diaper made of a piece of permeable inner thin layer, a piece of impermeable outer thin layer and the liquid absorbent core between the these two pieces of thin layer, wrapping around the front waist, the rear waist as well as the groin between the 2 sectors, having: forming in the longitudinal direction of said inner thin layer and in said groin and in the middle of the longitudinal direction impermeable and water repellent sector in a higher intensity than the 2 sections next to the middle part.
Patent TW-374920-B (TW)
Title: A variable comparison voltage generation apparatus for generating a comparison voltage corresponding to a variation of electric charge quantity in a ferroelectric substance memory element
Inventor: YI SEUNG-HYUN
IPC: G11C29/38
Filed: 1998-04-09
Granted: 1999-11-21
Abstract: A variable comparison voltage generation apparatus for a semiconductor memory element substitutes a variable comparison voltage amplifier for a fixed comparison voltage amplifier used for a ferroelectric substance memory. The variable comparison voltage generation apparatus according to the present invention accurately detect the data stored in the memory element with ferroelectric substance.
Patent TW-426801-B (TW)
Title: Absorption tester for optical components
Inventor: MORTON RICHARD GEORGE
IPC: G01N21/17
Filed: 1998-05-19
Granted: 2001-03-21
Abstract: The preferred embodiment of the invention measures the temperature increase of a light-transmitting optical component to determine the optical absorption of the optical component. Accurately determining the optical absorption of light-transmitting optical components advantageously allows for the accurate and efficient selection of light-transmitting optical components for use in an optical system. In one embodiment, an optical absorption tester holds multiple optical components and, for each optical component, the tester includes a temperature sensor placed in contact with the optical component and a reference temperature sensor placed in the vicinity of the optical component.
Patent TW-575637-B (TW)
Title: Process for producing thermoresistance resin paste
Inventor: SAKATA TOICHI
IPC: C08L79/08
Filed: 1998-05-28
Granted: 2004-02-11
Abstract: A thermoresistance adhesive which does not dissolve in the sealer-composing resins at the sealer molding temperature and is capable of providing a semiconductor chip/lead frame adhesive strength under shear of 1 N/4 mm<2> or greater, and including, for example, amide, imide, ester or ether linkage is suited for use in producing thermoresistance adhesive solutions and thermoresistance resin pastes, and the semiconductor chips, lead frames, films, etc., made by using such an adhesive are suited for providing low-cost semiconductor devices. <IMAGE>
Patent TW-393733-B (TW)
Title: Method and structure for cleaning the contact in an integrated circuit
Inventor: CHEN YI-NAN
IPC: H01L21/768
Filed: 1998-07-07
Granted: 2000-06-11
Abstract: A method and structure for cleaning the contact in an integrated circuit, in which a silicon oxide layer is formed on the semiconductor substrate after it completes with the early stage process firstly, and then a contact is formed by the photolithography and the ion etching technology. Then a hard mask is formed on the entire semiconductor substrate. The mentioned hard mask and silicon oxide layer have dielectric having a very high etching selectivity ratio. Using the ion etching technology to proceed with the etch back to remove the horizontal portion of the hard mask and reserve the vertical portion of the hard mask located at the inner side wall of the contact. Further use the conventional cleaning procedure to proceed with the cleaning.
Patent TW-408298-B (TW)
Title: Improved method for switched-predictive quantization
Inventor: MCCREE ALAN V
IPC: G10L19/12
Filed: 1998-08-12
Granted: 2000-10-11
Abstract: A new method for quantization of the LPC coefficients in a speech coder includes an improved form of switched predictive multi-stage vector quantization. The switch predictive quantization includes at least a pair of codebook sets in a MSVQ quantizer and a first and second prediction matrix 24a and 24b with the first prediction matrix 1 used with codebook set 1 and prediction matrix 2 used with codebook set 2 and the encoder determines which prediction matrix/codebooks set produces the minimum quantization error at detector 35 and control 29 gates the indices with the minimum error out of the speech coder.