baber/WOPTO huggingface dataset:
Patent TW-536748-B (TW)
Title: Manufacturing method of semiconductor device and semiconductor manufacturing system
Inventor: MIYAMOTO YUKI
IPC: G03F7/20
Filed: 2000-09-27
Granted: 2003-06-11
Abstract: A semiconductor manufacturing system of the present invention includes exposure value detection means for detecting an exposure value, pattern size detection means for detecting a pattern size, size comparison means for calculating a size difference between the pattern size and a target value, optimum exposure value calculation means for calculating an optimum exposure value based on the exposure value and the size difference, and an exposure value control means. In the semiconductor device manufacturing method of the present invention, the optimum exposure value is calculated based on the exposure value and the size difference, and exposure is performed at the optimum exposure value. A semiconductor device of the present invention is manufactured by the manufacturing method.
Patent TW-571545-B (TW)
Title: Random number generation for encrypting cellular communications
Inventor: SARKAR SANDIP
IPC: G09C1/00
Filed: 2001-01-17
Granted: 2004-01-11
Abstract: In wireless communications, transmission devices require continuous supplies of random data for encryption processes. The invention provides a method for generating a continuous pool of truly random data with hardware that is already available in conventional CDMA phones.
Patent TW-562755-B (TW)
Title: Stamp device for printing a pattern on a surface of a substrate
Inventor: MICHEL BRUNO
IPC: B41K1/02
Filed: 2000-10-24
Granted: 2003-11-21
Abstract: The invention concerns to a stamp device for printing a pattern on a surface of a substrate having a two-sided rigid carrier layer providing on it's first side a patterned leaver made of a first material and being combined on it's second side with a soft layer made of a softer material than said first material.
Patent TW-471128-B (TW)
Title: Manufacturing method for passivation
Inventor: WANG MU-JIUN
IPC: H01L23/485
Filed: 2000-11-22
Granted: 2002-01-01
Abstract: A manufacturing method for the passivation includes the following steps: forming a dielectric layer on the substrate provided with semiconductor devices; next, forming the liner on the dielectric; forming the welding pad on the liner to electrically connect the semiconductor devices in the substrate with the external packaging leadframe; then, forming a passivation on the substrate to protect the circuit and devices on the chip; removing part of the passivation to expose part of the welding pad; then, conducting wire bonding process on the welding pad.
Patent TW-499415-B (TW)
Title: Calixarene
Inventor: NICHOLSON GRAEME PETER
IPC: C07C327/42
Filed: 2000-12-15
Granted: 2002-08-21
Abstract: Disclosed are ""acid-thioamide"" calixarenes of formula (I), wherein: L is [-CH2-] or [-O-CH2-O-] and is the same or different between each aryl group; R5 is H, NO2, halogen, or C1-C10aliphatic hydrocarbyl group, C6-C20 aryl group, C6-C20 hydrocarbylaryl group, any of which is optionally substituted by one or more halo or oxo groups or interrupted by one or more oxo groups, and R5 is the same or different on each aryl group; R1 comprises a carboxy group which is or is not protonated or protected; two groups out of R2, R3 and R4 are H; and the one group out of R2, R3 and R4 not being H comprises a thioamide group. Dimer calixarenes are also disclosed. Also disclosed are methods of use of such calixarenes for the purposes of metal sequestration, especially of lanthanides and actinides. Also disclosed are processes for preparing the calixarenes. Further disclosed are sensors and sensor components utilising the calixarenes of the present invention.
Patent TW-500928-B (TW)
Title: Optical sheet with the product method
Inventor: MURATA MAKOTO
IPC: G02B5/02
Filed: 2001-03-21
Granted: 2002-09-01
Abstract: The invention provides the optical sheet which possesses both excellent photo-transparency and diffusivity for display of LCD, EL etc. The sheet also possesses the excellent duration to maintain the optical properties under high temperature and high humidity. The characteristic of this invention is that there are a base material with photo-transparency and a sticking layer is aminated directly or via other later on the said base material. Under the status of spherical particles being mono-particle layer, whose particle size distribution is 0.8 to 1.0 on the sticking layer, and being protuberant, each spherical particle is from the surface of sticking layer to be buried in. At the same time, the distance form the top of the protuberant part of the spherical particle to the surface of transparent base is ranged in 100 to 110% of volume average particle diameter of the spherical particle.
Patent TW-511320-B (TW)
Title: Method of operating a fuel cell
Inventor: MORRISSEY PATRICK JOHN
IPC: H01M8/18
Filed: 2001-03-22
Granted: 2002-11-21
Abstract: A method of operating a regenerative fuel cell which comprises two half-cells separated by a cation-exchange membrane, there being a halogen/halide electrolyte in one half of the cell, a sulfide/polysulfide in the other half of the cell and cations in both halves of the cell which act as charge carriers therebetween, wherein the state of charge of the sulfide/polysulfide electrolyte is in the range of from 1.8 to 2.5 for at least a part of the charge/discharge cycle over a plurality of cycles.
Patent TW-498350-B (TW)
Title: Resistor and method of manufacturing the same
Inventor: YAMADA HIROYUKI
IPC: H01C3/12
Filed: 2001-05-29
Granted: 2002-08-11
Abstract: The resistor of the present invention comprises a substrate, a pair of electrodes, and a resistor element comprising rectangular sections connected to the pair of electrodes and a S-shaped section disposed between the rectangular sections and is free of trimming portion. At least one of the rectangular sections is trimmed to adjust the resistance. According to the construction of the present invention, a compact resistor of superior surge property can be obtained.
Patent TW-501214-B (TW)
Title: Integrated circuit-arrangement to test transistors and semiconductor-wafer with such circuit-arrangement
Inventor: GUENTER GERSTMEIER
IPC: G11C29/00
Filed: 2001-06-08
Granted: 2002-09-01
Abstract: Circuit-arrangements to test transistors (T11, ..., T36) are arranged in slit-frames between integrated circuits on a semiconductor-wafer. In order to increase the number of the testable transistors in a small area- consumption, the transistors (T11, ..., T36) are arranged in a matrix form in at least two rows. The drain-source paths of the transistors of the 1st row (T11, ..., T16) are connected between the terminal-pads (P11, ..., P6) and their gate-terminals are connected to a common terminal-pad (P1). The drain-source paths of the transistors (T21, ..., T26) of the 2nd row are connected on one hand to one of the terminal-pads (P11, ..., P6) and on the other hand together to the other terminal-pad (P4). Their gate-terminals are also connected to other terminal-pad (P2). The matrix-shaped arrangement of the transistors (T31, ..., T36) can be expanded with additional rows.
Patent TW-I240149-B (TW)
Title: Photosensitive resin composition, photosensitive element comprising the same, process for producing resist pattern, and process for producing printed circuit board
Inventor: KIMURA NORIYO
IPC: G03F7/032
Filed: 2001-06-22
Granted: 2005-09-21
Abstract: The present invention relates to a photosensitive resin composition which comprises (A) a binder polymer, (B) a photopolymerizing compound having at least one ethylenic unsaturated bond in the molecule and (C) a photopolymerization initiator, wherein the binder polymer as component (A) comprises two or more binder polymers and/or has a dispersity of 2.5-6.0, and wherein the photopolymerizing compound as component (B) has in the molecule at least one ethylene glycol chain and at least one C3-C6 alkylene glycol chain.
Patent TW-525380-B (TW)
Title: System and method for single pin reset in a mixed signal integrated circuit
Inventor: ALBEAN DAVID LAWRENCE
IPC: H04N5/44
Filed: 2001-08-16
Granted: 2003-03-21
Abstract: A system and method is described for providing a single pin reset for a mixed signal integrated circuit. The system and method provides for a single reset signal/pin of the integrated circuit to be utilized to generate all internal resets for the analog and digital circuitry/sections of the mixed signal integrated circuit. In one form, a state machine generates a reset signal for a phase locked loop synthesizer that is utilized to generate internal system clocks for the analog and digital circuitry, as well as a digital reset signal that provides reset signals to the various digital sections circuitry of the integrated circuit. Preferably, the chip reset signal is provided for a longer period of time than the PLL reset signal in order to assure that the PLL is running and generating clocking signals before the digital logic is clocked.
Patent TW-499714-B (TW)
Title: A process for dry-etching a semiconductor wafer surface
Inventor: FICHTL GABRIELE
IPC: H01L21/8242
Filed: 2001-09-19
Granted: 2002-08-21
Abstract: A process for dry-etching a semiconductor wafer having exterior surface portions and having recesses between the exterior surface portions is disclosed, wherein the surface is exposed to a plasma etching component and a first material is anisotropically etched by the plasma etching component in bottom regions of the recesses. During anisotropical etching of the first material, the surface is exposed to a plasma deposition component for depositing a second material and the ratio of the plasma deposition component and the plasma etching component is adjusted in such a way that a layer of the second material is deposited on the exterior surface portions, the second material protecting the exterior surface portions from the plasma etching component and the first material in the recesses being etched selectively to the second material on the exterior surface portions. Due to an aspect ratio dependent net growth/etch rate, bottom regions of recesses can be etched selectively to exposed surface portions on top of the semiconductor surface which are protected by a layer of the second material deposited.
Patent TW-514943-B (TW)
Title: Multi-directional operation switch
Inventor: NISHIMOTO TAKUMI
IPC: G05G9/047
Filed: 2001-12-27
Granted: 2002-12-21
Abstract: An operational portion (12A) is mounted above a swing center axis of a plate portion (12B) of a operation body (12) that is supported by a pair of support portions of a case (1) such that a first axle portion (13) is swingable, a second axle portion (14) is swingable, and that is movable up and down in a lower position. By disposing a self-return type first push switch (2) below the second axle portion (14) side of the swing center axis, and disposing self-return type second push switch (3) and third push switch (4) below the left and right symmetrical positions on either sides of the swing center axis of the first axle portion (13) side, a multi-directional operation switch that can actuate individually a plurality of switches by a single operational portion is formed.
Patent TW-546314-B (TW)
Title: Method for producing ethylene-vinyl alcohol copolymer resin
Inventor: KAWAHARA TAKAHARU
IPC: B29C48/07
Filed: 2002-01-11
Granted: 2003-08-11
Abstract: Provided is a method for producing an ethylene-vinyl alcohol copolymer resin that ensures efficient removal of alcohol without worsening the working environment. The method comprises introducing an ethylene-vinyl alcohol copolymer solution containing at least 50 parts by weight of an alcohol having a boiling point of not higher than 100 DEG C, relative to 100 parts by weight of the ethylene-vinyl alcohol copolymer therein, into an apparatus, and contacting it with water in the apparatus, thereby letting the alcohol along with water out of the apparatus and taking the resulting aqueous ethylene-vinyl alcohol copolymer composition that contains from 0 to 10 parts by weight of the alcohol and from 10 to 1000 parts by weight of water, relative to 100 parts by weight of the ethylene-vinyl alcohol copolymer therein. Also provided is a method for producing pellets of the ethylene-vinyl alcohol copolymer resin, of which the advantages are that the method enables stable production and rapid washing of the pellets and that the pellets produced can enjoy stable extrusion and thermal stability in long-run extrusion working lines. The method comprises cutting the ethylene-vinyl alcohol copolymer resin taken out of the apparatus in the resin production method.
Patent TW-583297-B (TW)
Title: Phosphor
Inventor: TAKEDA TAKASHI
IPC: H01J11/22
Filed: 2002-01-18
Granted: 2004-04-11
Abstract: This invention provides a phosphor having a high emission luminance and a vacuum ultra-violet radiation excited light emitting element using the same. The phosphor may be made of barium (Ba), gadolinium (Gd), yttrium (Y), boron (B), oxygen (O), and an activator (one or more selected from Cerium (Ce), and Terbium (Tb); and said phosphor can be expressed by a composition formula of BaGd1-a-bYaLnbB9O16 where Ln represents at least one selected from Ce and Tb, and a and b satisfy 0.05 <= a <= 1 and 0.003 <= b <= 0.5, respectively. The foregoing phosphors are used in a vacuum ultra-violet radiation excited light emitting element; and said vacuum ultra-violet radiation excited light emitting element may comprise said foregoing phosphors of the same.
Patent TW-525264-B (TW)
Title: Manufacturing method of gate dielectric layer
Inventor: YU MO-CHIUN
IPC: H01L21/76
Filed: 2002-01-25
Granted: 2003-03-21
Abstract: A method for manufacturing gate dielectric layer is disclosed in the invention. In the invention, a step of ion implantation is added before performing a nitrification step onto the gate oxide layer in the subsequent process, in which negative ions are implanted to neutralize the accumulated positive charges generated by the subsequent nitrification process. Thus, the phenomena of flat band voltage (Vfb) shift and the threshold voltage shift in integrated circuit device due to the accumulation of charges can be improved. In addition, the influence of columbic scattering on the electron channel mobility can also be decreased. Furthermore, because the implantation of negative ions can change the growth rate of gate oxide layer, it is capable of obtaining the control of gate oxide layer thickness by changing the parameters of ion implantation. Thus, the integrated circuit device with a better quality can be manufactured.
Patent TW-574579-B (TW)
Title: Manufacturing method of pixel structure
Inventor: CHEN SHR-LUNG
IPC: G02F1/1343
Filed: 2002-02-08
Granted: 2004-02-01
Abstract: There is provided a manufacturing method of pixel structure, which comprises forming a passivation layer on a substrate formed thereon a thin film transistor array, in which a corner structure is formed on the passivation layer above the drain sidewall of each thin film transistor; next, forming a contact opening on the passivation layer above the drain by a photolithography process, and simultaneously removing partial thickness of the corner structure on the passivation layer; and forming a pixel electrode on the passivation layer. Because the corner structure of the passivation layer is removed in advance, it does not cause bad step coverage in the subsequent process of forming pixel electrodes on the passivation layer.
Patent TW-593430-B (TW)
Title: Preparation of polyamides
Inventor: WINTERLING HELMUT
IPC: C08G69/28
Filed: 2002-03-04
Granted: 2004-06-21
Abstract: A process is provided for the preparation of polyamides in an aqueous reaction mixture containing a nitrile selected from 6-aminocapronitrile and adipodinitrile, wherein a nitrile is used through which, in the liquid state, a gas inert to the nitrile has been passed.
Patent TW-565520-B (TW)
Title: Belt conveyor and auxiliary equipment thereof
Inventor: KOTAKI TAKASHI
IPC: B65G15/60
Filed: 2002-03-05
Granted: 2003-12-11
Abstract: Disclosed is a belt conveyor capable of remarkably reducing frictional resistance between side edges of the belt and a trough, comprising a trough (5), a belt (2) moving on the trough (5) along a longitudinal direction of the trough, a belt bending member (12) disposed on both lateral outer sides of the belt on the upstream side of the inlet (5a) of the trough and allowed to abut on both side edges of the belt to bend the belt upward, a load cell (14) for detecting a reaction received from the belt allowed to abut on the belt bending member (14), a guide rail (16) engaged so that the belt bending member (12) can displace in the direction for bending the sides of the belt and in the direction for recovering the bent belt and can be fixed at any position, and a rail (20) for moving the guide rail (16) in the longitudinal direction of the belt.
Patent TW-I242017-B (TW)
Title: Aqueous suspension polymerization of vinyl chloride alone or mixed with another vinyl monomer, using a stable free radical of nitroxide type as polymerization terminator
Inventor: BONARDI CHRISTIAN
IPC: C08F2/18
Filed: 2002-04-02
Granted: 2005-10-21
Abstract: In the process according to the invention for the aqueous suspension polymerization of vinyl chloride alone or mixed with another vinyl monomer, the polymerization initiator comprises at least one compound selected from the dialkyl peroxydicarbonates, the peroxy-tert-alkanoates and the diacyl peroxides, and use is made of a stable free radical of nitroxide type as polymerization terminator. The resultant resins have good whiteness.
Patent TW-550721-B (TW)
Title: Test fixture for semiconductor package
Inventor: SU HUAN-PING
IPC: G01R1/04
Filed: 2002-04-18
Granted: 2003-09-01
Abstract: A test fixture for semiconductor packages is proposed. The test fixture is composed of a circuit board, an interposer and a covering member. The circuit board is used to accommodate semiconductor packages and electrically connect the semiconductor packages to a test device. The interposer is mounted on the circuit board, and formed with through holes for receiving the semiconductor packages therein, wherein each through hole is formed with a positioning mechanism that is engaged with a corresponding semiconductor package received in the through hole, so as to allow the semiconductor package to be firmly held in position within the through hole. The covering member is attached onto the interposer, and provided with elastic mechanisms for assuring the semiconductor packages in electrical contact with the circuit board. By using the test fixture, semiconductor packages can be firmly coupled to the test device where functional tests are performed.
Patent TW-551017-B (TW)
Title: Transmission line-typed component
Inventor: YOSHIDA SHIRO
IPC: H05K1/02
Filed: 2002-05-08
Granted: 2003-09-01
Abstract: The present invention relates to a transmission line-typed component (1, 1') formed of a coaxial line with very low characteristic impedance. The component (1, 1') includes an inner conductor made of conductive material, a cylindrical outer conductor made of conductive material having a diameter larger than that of the inner conductor, and coaxially arranged around the inner conductor, and an insulating member with high dielectric constant interposed between the inner conductor and the outer conductor. Since the component (1, 1') is inserted in series between a power supply line (8) and a ground line (9), and the power supply ports of a LSI (6), most of the high frequency power supply current generated by the LSI (6) is reflected at the power supply ports of the LSI (6), and the part of high frequency power supply current entering the component (1, 1') is consumed as dielectric loss, and thus never reaches external power supply line (8).
Patent TW-539732-B (TW)
Title: A corrosion-prevention metallic aluminum powder
Inventor: CHEN JE-SHENG
IPC: C09D5/08
Filed: 2002-05-27
Granted: 2003-07-01
Abstract: A zinc rich coating which contains metallic aluminum powders is developed for corrosion prevention. The composition of the coating gives rise to a dry film consisting of 70-96 wt% metallic component. The metallic component is a mixture of zinc and aluminum in powder form. In the metallic mixture, the content of aluminum varies in the range of 1-25 wt%, which amounts to 1-10 wt% in the dry film of the coating.
Patent TW-583588-B (TW)
Title: Device for detecting movements of a surface of an object
Inventor: TSCHIRREN PIERRE
IPC: G06F3/033
Filed: 2002-05-31
Granted: 2004-04-11
Abstract: A movement detection device, intended particularly for a computer mouse or a hand-held scanner, includes a light source (7) associated with a prism (8) having a non-uniformly plane reflective face. One thus obtains an as uniform as possible illumination of the field (4) of the object whose movements will be detected. An optical system (9) inserted between the field and the optoelectronic sensor (13) fixed to a printed circuit board (6) is mounted on a support (12) fixed to the board.
Patent TW-567709-B (TW)
Title: Scanning chassis with a function to compensate shades of color
Inventor: KUO FANG-ERH
IPC: H04N1/04
Filed: 2002-07-15
Granted: 2003-12-21
Abstract: A scanning chassis with a function to compensate shades of color, in which being suited at least one interference film on one or several piece of reflectors, so that different colors of light will be compensated for the response of shades of color by using the interference film to get a constructive or a destructive interference.
Patent TW-589680-B (TW)
Title: MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
Inventor: HOFFMAN DANIEL J
IPC: H05H1/46
Filed: 2002-10-02
Granted: 2004-06-01
Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.
Patent TW-562920-B (TW)
Title: Optical fiber device for sensing degree of chemical reaction, manufacturing method thereof and sensing method
Inventor: LIN YUNG-BIN
IPC: G01N21/00
Filed: 2002-10-07
Granted: 2003-11-21
Abstract: A kind of optical fiber device for sensing degree of chemical reaction is disclosed, which is applied to a chemical reaction. The optical fiber sensor device comprises an optical fiber and a sensor layer, in which the optical fiber has a bare optical fiber portion of a sensor device and the sensor layer sustains an axial force from the bare optical fiber portion to generate an axial deformation on the sensor device and thus encapsulate the bare optical fiber portion. The sensing value of the sensor device will change when the sensor layer participates in the chemical reaction and thus the axial deformation changes accordingly. By comparing the variation of the sensing value, the degree of the chemical reaction can be determined.