baber/WOPTO huggingface dataset:
Patent TW-426848-B (TW)
Title: Redundant form address decoder for memory system storing aligned data
Inventor: GLEW ANDREW
IPC: G06F12/0895
Filed: 1999-06-08
Granted: 2001-03-21
Abstract: The present invention provides a memory system that retrieves data based upon rdundant form address data. The memory system includes a memory having a plurality of memory lines and an address decoder that enables one of the memory lines in response to a redundant form address signal. A redundant form decoder decodes redundant form data into a differential pair of decoded address lines for each bit position of a memory address. One of the two differential pairs carries correct address data. The one address line to be used is determined on a memory line by memory line basis, using the address of the memory lines themselves. The redundant form address decoder avoids a completion add that would otherwise be required, yielding very fast access to memory.
Patent TW-428227-B (TW)
Title: Multi-exposure process
Inventor: LIN JIN-LUNG
IPC: H01L21/027
Filed: 1999-06-17
Granted: 2001-04-01
Abstract: There is provided a multi-exposure process, which comprises: providing a chip having semiconductor devices formed thereon; forming a photoresist layer on the chip; providing a mask on the photoresist layer having a first pattern and a second pattern formed thereon; performing a first exposure process to form a first exposure pattern and a second exposure pattern on the photoresist layer corresponding to the first pattern and the second pattern; producing a relative shift between the chip and the mask until the second pattern of the mask is positioned on the first exposure pattern of the photoresist layer; performing a second exposure process to transfer the first exposure pattern of the photoresist layer into a third exposure pattern which is integrated with the first and the second exposure patterns, wherein the pattern density of the third exposure pattern is larger than those of the first and the second exposure patterns.
Patent TW-457823-B (TW)
Title: Radio communications device and method with API between user application program and telephony program and method
Inventor: MATHIS JAMES E
IPC: H04M1/72406
Filed: 1999-09-03
Granted: 2001-10-01
Abstract: A radio communications device has a memory having stored therein a user application program (16), a telephony program (18) and an application programming interface (API) 30 between these. Various aspects of the APE (30) are described. In one aspect, the API (30) has a command for establishing a call and the telephony program (18) accepts, as an argument of the command for establishing the call, an array identifying several terminal objects (54-58), thereby permitting establishment of a call for multiple terminal objects. In another aspect, groupings of events are described and an API (30) command defines an event class from one of the groups together with an ID defining an event within the event class. In a further aspect, a program in the telephony program (18) is called to create a call object (50). The call object (50) is created regardless of whether radio service for the radio communications device has been established.
Patent TW-533378-B (TW)
Title: Control method for synchronously simulating multiple PC peripheral equipment
Inventor: LIOU JENG-GUO
IPC: G06F9/455
Filed: 1999-09-23
Granted: 2003-05-21
Abstract: The present invention provides a control method for synchronously simulating multiple PC peripheral equipments. The circuit structure includes multiple PCs, a control unit (microcontroller, ASIC chip, EPLD or CPLD), and a peripheral equipment (a set of keyboard and mouse), wherein the control unit is connected between each PC and the peripheral equipment interface, and through the operation of the internal program in the control unit, so as to execute the data transmitting and receiving operations to multiple PCs at the same time.
Patent TW-436822-B (TW)
Title: Planar-circuit plate type inductor, transformer and the fabricating method of the same
Inventor: JANG JIUN-JI
IPC: H01F17/04
Filed: 1999-12-08
Granted: 2001-05-28
Abstract: The present invention is about a planar circuit plate type inductor, transformer and the fabricating method of the same. In this invention, copper circuits are individually formed on more than two layers of the printed circuit board. After each layer of printed circuit board is pressed and combined, each copper circuit on the printed circuit board is electrically connected to form the coil winding. At the axis center position of the coil winding, a hole is drilled and is filled with ferromagnetic material with high permeability to form a planar-circuit plate type inductor or transformer. Because coil winding is constructed by surrounding high permeability iron core, the inductance quantity of coil winding can be increased under the premise of without increasing turn number of coil and area of printed circuit board.
Patent TW-447178-B (TW)
Title: Socket and connector
Inventor: MATSUMURA SHIGERU
IPC: H01R12/87
Filed: 1999-12-20
Granted: 2001-07-21
Abstract: This invention is about a kind of socket that is used to receive a semiconductor component (10) having an electric terminal (12) and includes a contact (31), which is connected with electric terminal, and a driving mechanism, which is used to make contact move toward the electric terminal when semiconductor component is inserted into an inserting position of socket. This driving mechanism has a movable separating member (40) that is used to make contact (31) remain far away from the inserting position of semiconductor component (10) when semiconductor component is not inserted into the socket. This socket also has a spring (50) that is compressed when semiconductor component (10) is inserted into socket and additionally, pushes the movable separating member (40) toward semiconductor component.
Patent TW-429189-B (TW)
Title: Method and apparatus for friction welding
Inventor: KAWAURA KOICHI
IPC: B23K20/12
Filed: 1999-12-13
Granted: 2001-04-11
Abstract: Disclosed is a method for friction welding between a work W1, fix by clamps (22, 23), and at least one of works (W2, W3) by friction welding. Before performing friction welding. The works (W1 to W3) are arranged in row and made to contact to each other. And under this condition, inspect at least one of the size tolerance of the row of works, each work (W1 to W3), and installation of work (W2) fix by clamps (22, 23). Therefore, the quality and yield capacity can be promoted.
Patent TW-440968-B (TW)
Title: Heterojunction bipolar transistor device with sun-hat-shaped negative differential resistance characteristic
Inventor: LIOU WEN-CHAU
IPC: H01L29/737
Filed: 2000-01-10
Granted: 2001-06-16
Abstract: This invention is about the indium phosphide/indium gallium aluminum arsenide heterojunction bipolar transistor device that has amplification characteristic of general transistor and negative differential resistance characteristic, in which the magnitude of device base current can be used to control the characteristic of three terminals for the device. At large collector current region, this device performs like the general transistor. At small collector current region, this device has both amplification function region of transistor and negative differential resistance region. This negative differential resistance phenomenon is caused by the use of thin base layer structure and by introducing a single-atomic plane doped layer at the emitter-base junction. Additionally, the emitter-base junction has a post-positioned layer with 50 Å thickness, which can prevent the outer diffusion of base concentration and decrease the energy band of emitter region so as to increase the confinement ability for holes.
Patent TW-594796-B (TW)
Title: Electroconductive nitride film, its production method, and anti-reflector
Inventor: FUJINO MASAMI
IPC: C23C14/06
Filed: 2000-02-10
Granted: 2004-06-21
Abstract: This invention discloses an excellent heat-resistant electroconductive nitride film containing Ti and/or Zr, and at least one metal selected from the group consisting of Al, Mo, Cr, Nb, Hf, Ni, Co, Fe, Pd, Ag, Au and Pt, its production method and an anti-reflector using the electroconductive nitride film.
Patent TW-432625-B (TW)
Title: Forming method of contact structure having precise dimensions
Inventor: JIANG JING-LUEN
IPC: H01L21/768
Filed: 2000-03-14
Granted: 2001-05-01
Abstract: A manufacturing method for contact structure having precise dimensions on the semiconductor substrate includes the following steps: firstly, forming the dielectric on the semiconductor substrate; next, etching the dielectric to form the opening on the dielectric in which the opening exposes the upper surface of the semiconductor substrate; then, depositing the passivation on the dielectric surface in non-conformal manner and depositing on the sidewall and the bottom of the opening; etching the passivation to remove part of the passivation at the bottom of the opening and exposing the upper surface of the semiconductor substrate in which there is residual passivation on the upper surface of the dielectric and the sidewall of the opening; and, forming the conductive layer on the residual passivation surface and filling into the opening; next, removing part of the conductive layer until reaching the upper surface of the residual passivation.
Patent TW-509633-B (TW)
Title: Liquid consumption status detecting method liquid container and ink cartridge
Inventor: USUI MINORU
IPC: B65D81/24
Filed: 2000-05-19
Granted: 2002-11-11
Abstract: A method of detecting a consumption status of liquid contained in a liquid container, comprising steps of: preparing a detection device having a piezoelectric element and attaching the detection device on a desired position of the liquid container so that at least a part of the detection device contacting the liquid; measuring a residual vibration of the detection device; and detecting the consumption status of the liquid contained in the liquid container on the basis of a result of the measurement of the residual vibration.
Patent TW-I230159-B (TW)
Title: Novel compounds useful as reversible inhibitors of cysteine proteases
Inventor: EMMANUEL MICHEL JOSE
IPC: A61P37/02
Filed: 2000-09-11
Granted: 2005-04-01
Abstract: Disclosed are novel cathepsin S reversible inhibitory compounds of the formulas (I), (II), (Ia) and (Ib) further defined herein. The compounds are useful for treating autoimmune diseases. Also disclosed are processes for making such novel compounds.
Patent TW-482984-B (TW)
Title: Interrupt controller and method of accessing interrupts
Inventor: SUH WOON-SIG
IPC: G06F13/26
Filed: 2000-09-29
Granted: 2002-04-11
Abstract: An interrupt controller and an interrupt handling method thereof are described. When there is an interrupt, a priority level of an interrupt source is determined and a corresponding branch instruction is generated and inputted to a CPU. The CPU then directly branches off to a position containing an interrupt service routine addressed by the inputted branch instruction instead of a general CPU instruction, similar to interrupt handling in RISCs with vectored interrupts. Therefore, interrupt handling time is reduced.
Patent TW-490555-B (TW)
Title: Fiber optic illumination and detection patterns, shapes, and locations for use in spectroscopic analysis
Inventor: GARSIDE JEFFREY J
IPC: G01N21/47
Filed: 2000-10-09
Granted: 2002-06-11
Abstract: The invention provides a design process that is used in the determination of the pattern of detector and illumination optical fibers at the sampling area of a subject. Information about the system, specifically a monochromator (e.g. to determine the optimal number of fibers at an output slit) and the bundle termination at a detector optics stack (e.g. to determine the optimal number of fibers at the bundle termination), is of critical importance to this design. It is those numbers that determine the ratio and number of illumination to detection fibers, significantly limiting and constraining the solution space. Additional information about the estimated signal and noise in the skin is necessary to maximize the signal-to-noise ratio in the wavelength range of interest. Constraining the fibers to a hexagonal perimeter and prescribing a hex-packed pattern, such that alternating columns contain illumination and detection fibers, yields optimal results. In the preferred embodiment of the invention, two detectors share the totality of the detection fibers at the sampling interface. A third group of detection fibers is used for classification purposes.
Patent TW-468058-B (TW)
Title: Optical device and fabrication thereof
Inventor: GRANESTRAND PER
IPC: H01S5/12
Filed: 2000-10-21
Granted: 2001-12-11
Abstract: An optical device has a back facet (27) and a front facet (29; 29') opposite to each other, and includes a laser (23) adapted to emit light essentially perpendicular to said back facet; a modulator (25; 51; 55) having an input end and an output end (35, 53, 57), respectively, and adapted to receive and modulate light emitted from said laser and to output modulated light at said modulator output end; and a window region (33) arranged between said modulator output end and said device front facet, said device being further arranged such that modulated light output from said modulator is transmitted through said window region and is output from said device through said device front facet. The modulator is bent such that the modulated light output from said modulator is propagating essentially in a direction (34), which is angled (Α; δ) with respect to the normal (Z; 71) of said device front facet.
Patent TW-478979-B (TW)
Title: Pollution-free treatment method for organic wastes and device therefor
Inventor: CHEN HUANG-CHUAN
IPC: B09B3/00
Filed: 2000-12-22
Granted: 2002-03-11
Abstract: The present invention relates to a pollution-free treatment method for organic wastes and a device therefor. The method comprises: cracking an organic waste to about 80% coke; removing the coke from the reaction furnace and separately heating the coke to perform a secondary cracking in order to completely remove the volatile compositions remained in the coke and form a pure coke; discharging the cracking gas from the reaction furnace and, after processes of separation, cooling, etc., converting the cracking gas into a completely recycled resource oil and gas. The invented method overcomes the problems existed in a conventional thermal cracking method which has a long cracking time, a high temperature and poor quality of the coke produced. The invented method converts organic wastes into coke, oil, gas, etc. with a good quality at a mass production and fast process without any secondary pollution. The volatile compositions in the coke are even lower than 5%. Furthermore, the invented device uses the hot air generated by the heating furnace to heat up the reaction furnace and the coke secondary treatment tank, and the pre-heating of the front section of the heating furnace. This can increase the cracking efficiency while reducing the energy consumption. Take an example of treating 2000 kg of waste tire per batch, the cracking process takes only 2.5 to 3.5 hours. This pollution-free (free of secondary pollution) device can effectively process organic wastes while achieve the objective of environmental protection. The regenerated energy meets the spirit of the World Climate Doctrine of the United Nations.
Patent TW-591668-B (TW)
Title: Integrated semiconductor-memory and method to reset the memory-cells of an integrated semiconductor-memory
Inventor: GAMMEL BERNDT
IPC: G06K19/073
Filed: 2001-02-15
Granted: 2004-06-11
Abstract: An integrated semiconductor-memory with memory-cells (MC) in a memory-cells array (1) has a decoder (2) to select one of the memory-cells (MC) and a control-circuit (3), which is connected with the memory-cell-array (1) and the decoder (2). The memory-cells (MC) are combined to each unit (4), which through the control-circuit (3) and the decoder (2) a parallel reset of the memory-cells (MC) inside the units (4) is carried out with a pro-given data-signal (DA) and a sequential reset of each unit (4) is carried out with the pro-given data-signal (DA). The detectability of the current-profile generated in reset is thus restricted, thus the data-safety of the semiconductor-memory relative to the access is improved.
Patent TW-474862-B (TW)
Title: Abrasive drill bit
Inventor: LEE LAWRENCE
IPC: B24B9/08
Filed: 2001-04-30
Granted: 2002-02-01
Abstract: An abrasive cylinder bit comprising: a cylinder attached to a connection means; said connection means connected to a drill; said cylinder comprising a cylinder base, a cylinder side and a cylinder edge distal said cylinder base; said cylinder base connected to said cylinder side; said cylinder edge having a smooth surface; and said cylinder edge providing a means for grinding with an abrasive material a circle in a solid material.
Patent TW-508631-B (TW)
Title: Semiconductor device and process for the same
Inventor: TERASHIMA TOMOHIDE
IPC: H01L23/60
Filed: 2001-05-23
Granted: 2002-11-01
Abstract: The main purpose is to provide a semiconductor device which has a field plate wherein the electric field concentration at a step part can be eliminated and a higher withstanding voltage can be gained. A field plate (6f) is provided on a substrate (1). The field plate (6f) has a step part which bends toward the downward direction from the surface of the substrate (1).
Patent TW-522000-B (TW)
Title: Garment supporting bars
Inventor: LAM PETER AR-FU
IPC: A47G25/28
Filed: 2001-06-15
Granted: 2003-03-01
Abstract: An garment supporting apparatus (100) is disclosed having a stationary horizontal supporting bar (111); a movable supporting bar (121); a mounting mechanism (112, 122) enables the movable bar to rotate freely relative to the stationary supporting bar at one of the terminal ends and a engaging mechanism (126, 114) having a step shape (113, 114) enabling the other terminal end of the movable supporting bar to engage or release from the other terminal end of the stationary supporting bar.
Patent TW-541561-B (TW)
Title: Field emission display structure
Inventor: CHANG CHIH-CHIN
IPC: H01J31/12
Filed: 2001-06-29
Granted: 2003-07-11
Abstract: There is provided a field emission display structure, which includes a cathode substrate; a plurality of column line layers formed on the substrate, a resistance layer covering the column line layers; a plurality of gate row line layers crossing the column line layers; an insulating layer located below the gate row line layers to separate the gate row line layers, wherein the resistance layer between gate row line layers is still exposed, and in addition, the insulating layer and gate row line layers have some first micro holes and second micro holes for exposing the resistance layer; a plurality of micro tips located on the resistance layer exposed by the first micro holes; and a anode substrate located above the gate row line layers separated by a vacuum space.
Patent TW-512430-B (TW)
Title: Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
Inventor: MAHAWILI IMAD
IPC: H01L21/28
Filed: 2001-08-17
Granted: 2002-12-01
Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.
Patent TW-558623-B (TW)
Title: Heating cooker
Inventor: NAGAYA KATSUHIKO
IPC: F24C3/12
Filed: 2001-10-19
Granted: 2003-10-21
Abstract: The object of this invention is to provide a heating cooker, which can indicate properly the amount of exhaust air that is sucked from the heating cooker by an air exhaust device. A controller 30, which is used to control the operation of a gas table having a first gas burner 2 that is provided with a temperature sensor 54, includes an air exhaust-controlling device 36 and a cooking type-indicating device 35. The air exhaust-controlling device 36 is used to control the beginning, stopping, and exhaust air amount of the air exhaust action of the air exhaust device via an exhaust fan that can adjust exhaust air amount, and an infrared ray-emitting portion 15 for infrared-ray communication. The cooking type-indicating device 35 is used to indicate the type of heating and cooking that are performed by the first gas burner 2. The air exhaust-controlling device 36 activates the fan-driving unit to suck air upon beginning of the heating and cooking, and determines exhaust air amounts during a cooking operation and after a cooking operation based on the heating and cooking type indicated by the cooking type-indicating device 35, thereby activating the exhaust fan to suck air according to the indicated air amounts to be sucked.
Patent TW-552495-B (TW)
Title: LPC interface chip set to adjust the data-access timing automatically
Inventor: WU JIUN-JENG
IPC: G06F17/00
Filed: 2001-10-24
Granted: 2003-09-11
Abstract: The present invention relates to an LPC interface chip set to adjust the data-access timing automatically, whose main structure comprises: a slave controller of LPC connected with a master controller of a main control chip; an LPC/ISA bridge connected with the LPC slave controller, which can convert the data signal defined by the LPC interface into the data signal defined by the ISA interface; the control logic of plural ISA specification devices connected to the LPC/ISA bridge respectively to control each corresponding ISA specification device; a timing adjuster connected to the LPC/ISA bridge to adjust the data-access timing according to the ISA specification device or LPC specification device automatically.
Patent TW-554092-B (TW)
Title: Process for preparing low defect density silicon using high growth rates
Inventor: FALSTER ROBERT J
IPC: A61K31/7008
Filed: 2001-10-30
Granted: 2003-09-21
Abstract: The present invention relates to a process for growing a single crystal silicon ingot which contains an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process comprises (i) forming a region within the constant diameter portion in which vacancies are the predominant intrinsic point defect; (ii) heating the lateral surface of the ingot to cause a thermally induced inward flux of silicon self interstitial atoms into the region from the heated surface which reduces the concentration of vacancies in the region; and (iii) maintaining the temperature of the region in excess of the temperature, TA, at which agglomeration of vacancy point defects into agglomerated defects occurs during the period of time between the formation of the region and the reduction of the concentration of vacancies in the region.
Patent TW-506931-B (TW)
Title: Fast label pasting method and its apparatus
Inventor: WANG SHAU-CHIOU
IPC: B65C9/26
Filed: 2001-11-16
Granted: 2002-10-21
Abstract: This invention provides a fast label pasting method used for overcurrent protection device, in which a label strip containing a first label paper and a second label paper is prepared from a plural number of labels and the second label paper takes the outer contour of the overcurrent protection device. Assembly workers can peel off the second label paper to paste the label onto the overcurrent protection device and then peel off the first label paper to paste two-side area of the label onto the back side of the overcurrent protection device. This invention further discloses an apparatus capable of automating label pasting so that the time spent in using manual operation for label pasting can be conserved and man-made mistakes can be prevented.