Patent TW-202226530-A (TW)
Title: Semiconductor substrate, method of manufacturing semiconductor substrate and method of manufacturing semiconductor device to provide a semiconductor substrate with a larger surface area
Inventor: ITO FUYUMA
IPC: H01L27/06
Filed: 2021-02-02
Abstract: The semiconductor substrate according to the embodiment provides a semiconductor substrate with a larger surface area. The semiconductor substrate has a surface having a groove that includes an inner bottom surface and an inner wall surface. The inner wall surface has a recess having a depth from a direction along the surface of the inner wall surface to the width direction of the groove. The semiconductor substrate is exposed from the inner wall surface. Further, the inner wall surface of the semiconductor substrate according to the embodiment has a plurality of the recesses, and the recesses are arranged at intervals along the depth direction of the groove or the inner periphery of the groove. Further, the semiconductor substrate according to the embodiment also has a semiconductor layer, which is arranged on a part of the surface and extends along the inner wall surface. Further, the semiconductor substrate according to the embodiment also has a second surface, which is arranged on the opposite side of the above surface and has at least one second groove including the second inner wall surface. Further, the semiconductor substrate according to the embodiment is a silicon wafer, a silicon carbide wafer, a glass wafer, a quartz wafer, a sapphire wafer, or a compound semiconductor wafer. Further, the method for manufacturing a semiconductor device according to the embodiment includes the following steps: loading the first semiconductor substrate in the processing chamber, the first semiconductor substrate having a first surface and a film arranged on the first surface, and the film having a first groove; loading the semiconductor substrate of the above embodiment, that is, the second semiconductor substrate, in the processing chamber; and simultaneously processing the first semiconductor substrate and the second semiconductor substrate in the processing chamber. Further, the film in the manufacturing method of the semiconductor device according to the embodiment has a first layer and a second layer which are laminated alternately. Further, the processes in the manufacturing method of the semiconductor device according to the embodiment includes at least one process selected from the group consisting of film-forming process, an etching process and a modification process. Further, in the manufacturing method of the semiconductor device according to the embodiment, a plurality of the second semiconductor substrates are loaded in the processing chamber. Further, in the manufacturing method of the semiconductor substrate according to the embodiment, a catalyst layer is formed on the surface of the semiconductor substrate, and a first liquid containing hydrogen fluoride is supplied to the semiconductor substrate on which the catalyst layer is formed. After supplying the first liquid, a second liquid containing hydrogen fluoride, whose concentration is lower than that of the first liquid, is supplied.