Patent SG-11201804392W-A (SG)
Title: Fired multilayer stacks for use in integrated circuits and solar cells
Inventor: HARDIN BRIAN
IPC: H01L51/46
Filed: 2016-11-23
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -' Organization International Bureau res.. 00) (43) International Publication Date .... ...tirso 1 June 2017 (01.06.2017) WIPO I PCT (10) WO International Publication Number 111111111111311111111111111111111111111111111111111111111111111111111111111111111111111111 2017/091782 Al (51) International Patent Classification: Place, Saratoga, California 95070 (US). LIN, Tom Yue- HULL 21/02 (2006.01) H01L 27/142 (2014.01) Tang; 2317 Hearst Avenue, Apt. 8, Berkeley, California HO1L 21/314 (2006.01) HO1L 41/083 (2006.01) 94709 (US). CONNOR, Stephen; 741 Kansas St, Apt 1, HO1L 21/316 (2006.01) HO1L 41/27 (2013.01) San Francisco, California 94107 (US). HELLEBUSCH, HO1L 21/324 (2006.01) HO1L 41/273 (2013.01) Daniel; 411 Hudson St., Apt 4, Oakland, California 94618 HO1L 21/38 (2006.01) HO1L 51/46 (2006.01) (US). PETERS, Craig; 3707 Naughton Ave., Belmont, California 94002 (US). (21) International Application Number: PCT/US2016/063696 (74) Agent: CARON, R'Sue; 2750 Elmwood Ave, Berkeley, California 94705 (US). (22) International Filing Date: 23 November 2016 (23.11.2016) (81) Designated States (unless otherwise indicated, for every (25) Filing Language: English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (26) Publication Language: English BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (30) Priority Data: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, 62/259,636 24 November 2015 (24.11.2015) US KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, 62/318,566 5 April 2016 (05.04.2016) US MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, 62/371,236 5 August 2016 (05.08.2016) US OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, 62/423,020 16 November 2016 (16.11.2016) US SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, (71) Applicant: PLANT PV, INC [US/US]; 850 Marina Vil- TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. lage Parkway, Suite 102, Alameda, California 95401 (US). (72) Inventors: HARDIN, Brian; 736 Walnut St., Apt #1, San (84) Designated States (unless otherwise indicated, for every Carlos, California 94070 (US). SAUAR, Erik; Konglevei- kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, en 24 B, N-0860 Oslo (NO). SUSENO, Dhea; 901 Jeffer- son St., Apt 316, Oakland, California 94607 (US) HIN- TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, RICHER, Jesse; 1543 20th Ave., Pipestone, Minnesota TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, 56164 (US). HUANG, Jennifer; 12678 McCartysville [Continued on next page] (54) Title: FIRED MULTILAYER STACKS FOR USE IN INTEGRATED CIRCUITS AND SOLAR CELLS 1132 1134 1102 1103 1199 A 1130 - . k .... , 1122 % , ,,• NA 1100 •• , * kt ‘ • :, M , , • \ • „, k , • ,, ,,, 1110 11 • \ \ ' v e, .> %. , t \•••,: . \ ...,‘, a, ,:.‘„ ‘ \ \ , •:.•.., ei co FIG. 11 IC - - 1—I C P \ (57) : Intercalation pastes for use with semiconductor devices are disclosed. The pastes 0 ---. tercalating particles, and an organic vehicle and can be used to improve the material properties mulations have been developed to be screen-printed directly onto a dried metal particle layer IN c:::, stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. ei In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve 0 can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include 5. electronic devices. contain precious metal particles, in - of metal particle layers. Specific for- and fired to make a fired multilayer adhesion to a substrate. Such pastes silicon back-surface field (BSF), integrated circuits and more broadly, WO 2017/091782 Al MIDEDIMORMIHEMOMEIMOMEIDEREVOIMIE LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, before the expiration of the time limit for amending the SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, claims and to be republished in the event of receipt of GW, KM, ML, MR, NE, SN, TD, TG). amendments (Rule 48.2(h)) Published: — with international search report (Art. 21(3))