baber/WOPTO huggingface dataset:
Patent TW-388922-B (TW)
Title: Plasma immersion implantation with pulsed anode
Inventor: DENHOLM ALEX S
IPC: C23C14/48
Filed: 1997-12-27
Granted: 2000-05-01
Abstract: Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber (12) defines a chamber interior into which one or more workpieces can be inserted and includes a conductive inner wall portion (22) in proximity to the chamber interior. A conductive workpiece support (30) extends into an interior region of the implantation chamber. A conductive electrode (32) is disposed within said implantation chamber relative to said conductive workpiece support to allow workpieces to be placed on the workpiece support in a region (34) between the support and the conductive electrode. Gas molecules are injected into the implantation chamber to cause the gas molecules to occupy a region of the implantation chamber in close proximity to the one or more workpieces. The gas molecules are ionized near an implant surface of the workpieces. Control circuitry (100) pulses the conductive electrode to a positive potential relative to the conductive workpiece support, the one or more workpieces, and the conductive wall portion of the implantation chamber. The control circuitry includes a voltage source that provides an electric field through which the ionized gas molecules accelerate before striking the implantation surfaces of the one or more workpieces.
Patent TW-417111-B (TW)
Title: Semiconductor memory device with data sensing scheme regardless of bit line to bit line coupling
Inventor: CHOI BYENG-SUN
IPC: G11C17/18
Filed: 1998-01-09
Granted: 2001-01-01
Abstract: A semiconductor memory device includes a precharge circuit for precharging bit lines in response to a first control signal during a bit line precharge period, a plurality of transistors each has a current path connected between the corresponding bit line and the precharge circuit and a control terminal which is applied with a second control signal, a data sensing circuit for sensing data states on the bit lines via the transistors during a data sensing period, and a control circuit for generating the first and second control signal. The second control signal has first and second voltage levels during the bit line precharge and the data sensing periods, respectively, and the first and second voltage levels differ from each other. Thus, even though a high voltage level bit line lowers by the bit line-to-bit line coupling voltage from a bit line precharge voltage owing to inter-bit line coupling, the second control signal goes to the second voltage level from the first voltage level such that the corresponding transistor is shut off. As a result , the corresponding sensing node between the transistors and the data sensing means is maintained to a preset voltage without transitorily dropping during a data sensing period.
Patent TW-382734-B (TW)
Title: Process for the production of flat-screen grids coated with non-evaporable getter materials and grids thereby obtained
Inventor: CORAZZA ALESSIO
IPC: H01J29/94
Filed: 1998-02-24
Granted: 2000-02-21
Abstract: A process is disclosed for the production of flat-screens grids coated with non-evaporable getter materials, wherein a metal sheet being as thick as the resulting grid and having at least the same surface area as the image formation zone is coated at least on one side with one or more non-evaporable getter materials and then parts of the sheet thereby coated are selectively removed. Some embodiments of grids produced with such a process are also disclosed.
Patent TW-370735-B (TW)
Title: A starter for an internal combustion engine
Inventor: OHYA MASAAKI
IPC: H02K7/20
Filed: 1998-03-21
Granted: 1999-09-21
Abstract: In an engine starter according to the present invention, an annular stopper disposed between the pinion unit and the solenoid device so as to determine the rest position of the pinion unit is formed with a tongue projecting radially outwardly from its outer periphery, and a shoulder surface defined in the gear cover so as to abut an end surface of the solenoid device and thereby determine the axial position of the solenoid device is formed with a recess for receiving the tongue of the annular stopper, with the tongue and the recess being dimensioned with respect to each other so as to allow the tongue to be resiliently interposed between the recessed part of the shoulder surface and the end surface of the solenoid device and to define a space which accommodates a corresponding deformation of the tongue. Thus, since a space which accommodates the deformation of the tongue of the stopper is provided within the recess of the shoulder surface, the tongue can be resiliently deformed so as to support the annular stopper steadily without affecting the axial position of the solenoid device.
Patent TW-403903-B (TW)
Title: Optical recording media
Inventor: NAGATAKI YOSHIYUKI
IPC: G11B7/2472
Filed: 1998-04-01
Granted: 2000-09-01
Abstract: Providing a kind of high-density optical recording medium which could proceed recording and reproducing with the laser lightsource with the oscillating wavelength between 630-660 nm. The laminated optical recording medium 10 has the light absorbing layer 14 and reflective layer16 on the substrate 12. The light absorbing layer 14 has the trimethinecyanine dye represented by the following general formula (1). (in formula (1), B and N represent the atom groups forming the benzene ring and naphthalene ring, respectively; R1, R2, R3, R4, R5 and R6 represent hydrogen atom, alkyl group, alkoxyl group, alkylhydroxy group, aralkyl group, alkenyl group, alkylcarboxyl group or alkylsulfonyl group; X<-> represents halogen ion or perchloric acid ion).
Patent TW-491850-B (TW)
Title: Process for preparing etoposide
Inventor: SILVERBERG LEE JONATHAN
IPC: C07H17/08
Filed: 1998-05-29
Granted: 2002-06-21
Abstract: The present invention relates to a novel process for preparing the anticancer compound, etoposide, in the C-1""-bgr; anomeric form, as well as a novel intermediate compound. A process for preparing the compound etoposide 4 having the structure which comprises: (a) reacting an anomeric mixture of a compound of formula 2 having the structure with a compound 1 having the structure in acetonitrile as a reaction medium and in the presence of boron trifluoride etherate at a temperature between 0 DEG C to -40 DEG C to form an anomeric mixture of a compound of formula 3 having the structure, (b) recovering the C-1""-β form of compound 3 substantially free of the Α form from said reaction medium; and (c) removing the hydroxy-protecting groups from the product of step (b) by a Pd/C catalyst.
Patent TW-386241-B (TW)
Title: Semiconductor thin film and semiconductor device
Inventor: OTANI HISASHI
IPC: H01L21/20
Filed: 1998-06-02
Granted: 2000-04-01
Abstract: After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crytalline semiconductor thin film has features that it exhibits {110} orientation and that almost all crystal lattices have continuity at a crystal boundary. This type of grain boundaries greatly contribute to improving the carrier mobility, and make it possible to realize semiconductor devices having very high performance.
Patent TW-461068-B (TW)
Title: Apparatus and method for lead forming
Inventor: CHOI JUN-HYUK
IPC: C25D5/48
Filed: 1998-08-14
Granted: 2001-10-21
Abstract: A lead forming apparatus capable of removing tin dust from the surface of the leads, and a lead forming method that removes tin dust from the surface of the leads. The apparatus comprises a supplier part; a lead forming part; a collection part; an intermediate post; a package transportation part; a brush block, the brushes removing tin dust which is created and clings to the leads of the devices during lead forming by the lead forming part; and a brush transportation part. The method comprises steps of providing a leadframe, bending and forming the package leads, removing tin dust from the leads, and collecting the packages in a container.
Patent TW-441093-B (TW)
Title: DRAM-cell device and its production method
Inventor: BERTAGNOLLI EMMERICH
IPC: H01L21/8242
Filed: 1998-08-19
Granted: 2001-06-16
Abstract: On one of two opposite edges of a semiconductor structure, which includes a source/drain-area (S/D1a) and a channel-area (Kaa), located below said source/drain area (S/D1a), of a vertical selection-transistor and can arranged between trenches, is arranged an element in a height of said channel-area (Kaa), said element can prevent the expansion of a channel. Said source/drain-area and each word-line (w1a) are adjacent to said two edges. For folded bit-lines (B1a), each two word-lines (w1a) can be constructed ins aid trench (G2a). Said elements of the semiconductor structures which are adjacent along one of the trenches (G2a) are alternatively arranged on one edge of the trench (G2a) and on one edge of the adjacent trenches (G2a). A memory-capacitor can be arranged above a substrate (1a) or buried in a substrate (1a). The connection of said selection-transistor with a bit-line (B1a) can be carried out with various arts.
Patent TW-371713-B (TW)
Title: Construction of a 3P capacitor type pressure sensor and its manufacture method
Inventor: CHANG KOW-MING
IPC: G01L9/12
Filed: 1998-08-24
Granted: 1999-10-11
Abstract: Construction of a 3-pole capacitor type pressure sensor and the manufacture method, capable of integrating a sensing capacitor and a reference capacitor into a pressure sensor chamber, while a differential circuit is employed in this dual capacitor construction to eradicate the environment interference which occurs often in the similar model sensor; the existence of three poles will avert to connect two electrodes, an upper electrode and a lower one at the same level; the 3P capacitor pressure sensor provides a working pressure ranging from 25 psi to 40 psi and a sensitivity of 0.21 pF/psi, much higher than the conventional sensor which is 0.05 pF/psi; the advantages are simple to make, level connection and high sensitivity.
Patent TW-436275-B (TW)
Title: A dispenser for center feed roll products
Inventor: KING TIMOTHY JAMES
IPC: A47K10/34
Filed: 1998-11-25
Granted: 2001-05-28
Abstract: A dispenser for center feed roll products includes a base and a cover adapted to fit the base. The cover further defines a cavity to receive the center feed roll product. The base further includes a roll platform and a securing means. The securing means defining an aperture is coupled to the roll platform and is adapted to support a center feed roll product. In addition, the securing means permits the installation of a roll product through the aperture and prevents the removal of the roll product.
Patent TW-412761-B (TW)
Title: Current blocking coil
Inventor: SUGANUMA MASARU
IPC: H01F27/29
Filed: 1999-01-29
Granted: 2000-11-21
Abstract: This invention is about the current blocking coil, especially, the coil that can be obtained with the characteristics such as without the concern about the connector deterioration and falling off, simplified constitution of the connector installation, and easy process for the whole assembling. The subject of this invention is to provide the current blocking coil that has the characteristics such as without the concern about the connector deterioration and falling off, simplified constitution of the connector installation, and easy process for the whole assembling. The constitutions of this invention are described as follows. The ring core 1 has a circular hole 10 and an opening 11 formed on the upper portion. A cylindrical coil 30 is constituted by winding a coil 3 around a coil core portion 22 of the cylindrical core 2. The insulation tube 6 is composed of the insulation material. A U-shaped terminal 4 is formed by the elevation portion 43 and the bending connection portion 44. The cylindrical coil 30 is fit through the tube 6 made of insulating materials into the circular hole of the ring core 1, and the U-shaped terminal 4 is engaged elastically with the opening 11 and the lower edge of the ring core 1.
Patent TW-410485-B (TW)
Title: AlGaInP light emitting devices with thin active layers
Inventor: GARDNER NATHAN F
IPC: H01L33/30
Filed: 1999-02-05
Granted: 2000-11-01
Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer (14A) of a first conductivity type, an AlGaInP active region (12) of a second conductivity type, and an AlGaInP upper confining layer (14B) of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers (16) of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer (14B) may be doped with oxygen improve the reliability.
Patent TW-417134-B (TW)
Title: Distributed inductively-coupled plasma source
Inventor: PU BRYAN Y
IPC: H01L21/302
Filed: 1999-03-10
Granted: 2001-01-01
Abstract: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of induction coils is distributed over a geometric surface having a circular transverse section. Each coil has a transverse section which is wedge-shaped so that the adjacent side of any two adjacent coils in the array are approximately parallel to a radius of the circular transverse section of the geometric surface. The sides of adjacent coils being parallel enhances the radial uniformity of the magnetic field produced by the coil array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the near end of each coil connects directly to electrical ground. In second and third embodiments, two coils are connected in series at the near end of each coil. In the second embodiment, the opposite (""RF hot"") end of each coil is connected to a respective balanced output of an RF power supply. In third embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.
Patent TW-410250-B (TW)
Title: A grid frame for sidewalk brick
Inventor: GAN JIUN-ER
IPC: E04F15/08
Filed: 1999-04-19
Granted: 2000-11-01
Abstract: This invention is about a grid frame for sidewalk brick. The several grid frames with installation space are made of the used tires. Thus the bricks can be supported and fixed by the installation space of the grid frames. The contacted side between the installation space and the brick is scratched some chases for the rainfall passing. Hence, while a sidewalk is constructed, the first is to build the concrete frame up and set the grid frames into. Then the bricks can be firmly confined in the gird frames. Therefore, the sidewalk has the following features: good water-drainage, easy replacement, high shock absorption, and good temperature adaptability.
Patent TW-454398-B (TW)
Title: ATM-based distributed virtual tandem switching system
Inventor: ALLEN GEORGE C JR
IPC: H04L12/56
Filed: 1999-05-25
Granted: 2001-09-11
Abstract: An asynchronous transfer mode (ATM)-based distributed virtual tandem switching system is provided in which a network of ATM-based devices is combined to create a distributed virtual tandem switch. The system includes an ATM switching network that dynamically sets up individual switched virtual connections. The system also includes a trunk interworking function (T-IWF) device and a centralized control and signaling interworking function (CS-IWF) device. The trunk interworking function device converts end office voice trunks from TDM channels to ATM cells by employing a structured circuit emulation service. The centralized control and signaling interworking function device performs call control functions and interfaces narrowband signaling and broadband signaling for call processing and control within the ATM switching network. Consequently, the ATM based distributed virtual tandem switching system replaces a standard tandem switch in the PSTN.
Patent TW-423075-B (TW)
Title: Process for producing a semiconductor device
Inventor: TAKENAKA NOBUYUKI
IPC: H01L21/316
Filed: 1999-09-07
Granted: 2001-02-21
Abstract: A process for producing a semiconductor device comprising the steps of: forming a first insulating film on an underlayer having an electrically conductive layer; forming a first opening in the first insulating film to expose at least part of the electrically conductive layer; forming on the first insulating film a second insulating film which is more susceptible to etching than the first insulating film while filling the first opening with the second insulating film; forming a mask having an opening at least as large as the first opening in a region on the second insulating film which region corresonds to the first opening; removing at least the second insulating film filling the first opening with use of the mask thereby to form a second opening; depositing a material for forming a wiring layer entirely on a surface so as to fill the first opening and the second opening with the material, thereby to form in the first opening and the second opening a wiring layer which electrically connects to the electrically conductive layer; and removing the material for forming the wiring layer deposited on an upper surface of the second opening and on the second insulating film, by polishing.
Patent TW-I226960-B (TW)
Title: Functional film and method for producing thereof, and liquid crystal display device using the functional film and method for producing thereof
Inventor: NOMURA TAKAIKI
IPC: C08J7/046
Filed: 1999-09-16
Granted: 2005-01-21
Abstract: An undercoat solution comprising a compound represented by a formula X-(SiOX2)n-SiX3 (where X is at least one compound selected from the group consisting of a halogen, an alkoxy group, and an isocyanate group, and n is an integer of 0 or larger) is brought into contact with a surface of a base material, and the resulting base material is dried at a temperature lower than 300 DEG C, in order to form an undercoat layer. A surface of the undercoat layer is then brought into contact with a solution containing a silane compound so that a molecule of the silane compound is chemisorbed on the surface of the undercoat layer. The resulting substrate is baked at a temperature of 300 DEG C or higher. Thereby, the invention improves a water repellency, a durability, and a heat-resisting characteristic of a functional film for modifying a property of a surface of a base material, the functional film comprising a silane compound.
Patent TW-468208-B (TW)
Title: Semiconductor apparatus, its manufacturing method, and electronic apparatus
Inventor: SASAKI MASAKO
IPC: H01L23/498
Filed: 1999-11-03
Granted: 2001-12-11
Abstract: The present invention is related to the semiconductor apparatus, its manufacturing method, and electronic apparatus. The semiconductor apparatus is provided with the semiconductor chip (1), which has electrode (1C) on the circuit formation surface (1X), and is covered with the composition of resin film (2) that is on the back surface (1Y) opposite to the circuit formation surface (1X) of the semiconductor chip (1) stated above. By using this composition, it is capable of preventing semiconductor chip from cracking.
Patent TW-552165-B (TW)
Title: New clean method and equipment for dispersion head
Inventor: LEE CHING-LUN
IPC: B08B3/12
Filed: 2000-02-03
Granted: 2003-09-11
Abstract: The present invention relates to a method and the equipment for cleaning a dispersion head, which can be applied on a semiconductor chemical vapor deposition (CVD) device. In which, a vacuum generated by a machine is used to remove dusts on the external cover of a dispersion head and the surface thereof. Next, the external cover of the dispersion head and the dispersion head are dismounted from the machine. The dusts on the surface of the region used for loading the dispersion head on the machine are cleaned. A chemical reaction tank is provided. The dispersion head is immersed in the chemical reaction tank and oscillated with an ultrasound. An overflowing water tank is provided. The dispersion head is immersed in the overflowing water tank, and the water resistance is monitored. A refluxed isopropanol tank is provided. The dispersion head is immersed in the refluxed isopropanol tank. Next, a drying system is provided to dry the dispersion head, thereby completing the process of cleaning the dispersion head.
Patent TW-442654-B (TW)
Title: Optical semiconductor device with convergent lens
Inventor: TOMITA YOSHIHIRO
IPC: H01L31/0232
Filed: 2000-05-06
Granted: 2001-06-23
Abstract: An optical semiconductor device with a convergent lens comprising: a convergent lens 1, a wiring pattern 11 formed on a surface of the convergent lens 1, wherein the wiring pattern has an opening for converging a light, and a semiconductor element 2 electrically directly connected with a back surface of the wiring pattern 11 for electrically connecting this to an outside, whereby the size of the device can be miniaturized by preventing outer terminals from protruding from a side surface of a hollow package, and a cost of the device is low.
Patent TW-470963-B (TW)
Title: Failure analysis system of semiconductor memory device
Inventor: TANAKA MIKIHIRO
IPC: G06F17/50
Filed: 2000-05-08
Granted: 2002-01-01
Abstract: In failure analysis method of a semiconductor memory device, an absolute value of a position difference between two fail bits of a two-dimensional bit map is calculated while a histogram corresponding to the absolute value of the position difference is updated. The bit map indicates a map of fail bits and each fail bit corresponds to a fail memory cell. The above calculation is repeated to all combinations of two of the fail bits in the bit map. Then, an expectation function value is calculated for each of values from the histograms and the number of the fail bits. Finally, whether the fail bits has regularity or irregularity for each value is determined based on the calculated expectation function value for the value.
Patent TW-458764-B (TW)
Title: Centrifugal brake of reel supported by bearings at both ends
Inventor: HIRAYAMA HIROKAZU
IPC: A01K89/0155
Filed: 2000-07-28
Granted: 2001-10-11
Abstract: To rapidly adjust braking force in a centrifugal brake mechanism where moving members can be switched between two states. This centrifugal brake mechanism brakes a spool by centrifugal force and is equipped with plural moving members 67, a cylindrical braking member 68, a switching mechanism 69 and a reference mark 80. Plural moving members are attached to a rotating member 66 radially in a movable state in a radial direction. The braking member is placed on the outer peripheral side of plural moving members, can be contacted with the moving members and is not revolvable to a reel body. The switching mechanism can perform changing over between a nonoperable state enabling moving members not to contact with the braking member and an operable state enabling moving members to contact with the braking member by transferring the moving members to different positions in a radial direction. The reference mark is used for distinguishing moving members changed into the nonoperable state by the switching mechanism from moving members changed into the operable state.