Patent EP-3557624-A1 (EP)
Inventor: KERN ROLAND
IPC: H01L31/18
Filed: 2011-05-27
Abstract: A method of fabricating monolithically-integrated optoelectronic modules (100) comprising at least two series-interconnected optoelectronic components (104, 106), comprising the steps of:cutting at least one continuous back-contact groove (121) into a back-contact layer (120), wherein cutting the at least one continuous back-contact groove (121) forms at least one first and at least one second back-contact component (122, 124, 126, 128) that are electrically disconnected from each other;cutting at least one continuous front-contact groove (151) into a front-contact layer (150) to form at least one first and at least one second front-contact components (154, 156, 158) that are electrically disconnected from each other, and wherein at least a portion of the at least one first or the at least one second front-contact components (154, 156, 158) overlap with the at least one second or first back contact components (122, 124, 126, 128), respectively;forming at least one semiconductive layer (130, 140) that comprises at least one semiconductive optoelectronically active layer (130), wherein a portion of the at least one semiconductive layer is disposed between the front-contact layer (150) and the back-contact layer (120), and the semiconductive optoelectronically active layer (130) comprises preferably a CIGS-type ABCmaterial, where A comprises preferably copper, B comprises preferably indium and/or gallium, and C comprises preferably selenium; anddrilling at least one cell-to-cell via hole (155), and wherein heat provided in the drilling process causes:a permanent change in the chemical composition of the surface of the semiconductive layer(s) in the cell-to-cell via hole (155), by causing an electrically conductive permanently metalized material, preferably a copper-rich CIGS-type ABCmaterial, to form on the surface (134, 136) of the cell-to-cell via hole (155), andan electrically conductive path to form between at least one of the first front-contact components (154, 156) and at least one second back-contact component (124, 126), thereby forming the at least two series-interconnected optoelectronic components (104, 106);drilling at least one busbar-to-back-contact via hole (153) so as to expose part of a first or a second back-contact component (122, 124, 126, 128);forming a first busbar (182) so that an electrical path is established between the first busbar (182) and the exposed part of the first or the second back-contact component (122, 124, 126, 128);drilling at least one busbar-to-front-contact via hole (157) that passes through at least one of the first or second front-contact components (154, 156, 158), wherein the at least one busbar-to-front-contact via hole does not pass through the first or the second back-contact component (122, 124, 126, 128) exposed by the at least one busbar-to-back-contact via hole; andforming a second busbar (188), preferably using at least one conductive adhesive component (172), so that an electrical path is established between the second busbar (188) and the exposed part of the first or the second front-contact component (154, 156, 158).