baber/WOPTO huggingface dataset:
Patent JP-2008140486-A (JP)
Title: Aberration correction apparatus
Inventor: NAGAZA TSUTOMU
IPC: G11B7/125
Filed: 2006-12-04
Abstract: <P>PROBLEM TO BE SOLVED: To provide an aberration correction apparatus which includes a liquid crystal device having two electrode layers each being formed with regions divided concentrically, the aberration correction apparatus permitting highly accurate aberration correction.  <P>SOLUTION: A potential belonging to a high sensitivity region included in liquid crystal characteristic that is a relationship between potentials applied to the respective electrode layers sandwiching in a liquid crystal 15 therebetween and a phase change magnitude of a light beam transmitted through the liquid crystal 15 is applied to each concentric region formed in the first electrode layer 13 included in a liquid crystal device 8, and a potential belonging to a low sensitivity region included in the liquid crystal characteristic is applied to each concentric region formed in the second electrode layer 14 included in the liquid crystal device 8, whereby an aberration of the light beam is corrected.  <P>COPYRIGHT: (C)2008,JPO&INPIT
Patent JP-2007074754-A (JP)
Title: Surface acoustic wave device, and mobile communication device and sensor both using same
Inventor: TAKAYAMA RYOICHI
IPC: H03H9/25
Filed: 2006-12-04
Abstract: <P>PROBLEM TO BE SOLVED: To minimize loss and to improve steep characteristics in a surface acoustic wave (SAW) device, such as a SAW resonator or a SAW filter.  <P>SOLUTION: IDT electrodes and a reflector are provided on a piezoelectric substrate 1 cut out at a cut-angle which allows the substrate to excite a leakly surface acoustic wave (LSAW). A sonic velocity of a SAW conventionally utilized as LSAW is reduced and by utilizing a SAW decelerated than a velocity of slow shear wave propagating on the piezoelectric substrate, the SAW conventionally utilized as LSAW is utilized as a Rayleigh surface acoustic wave (RSAW), thereby obtaining a SAW filter or a SAW resonator which reduces insertion-loss and improves steep characteristics in comparison with a conventional SAW filter or SAW resonator using the LSAW.  <P>COPYRIGHT: (C)2007,JPO&INPIT
Patent JP-2008141886-A (JP)
Title: Pam inverter apparatus having ground fault detection/protection circuit
Inventor: WADA YASUYUKI
IPC: H02M7/00
Filed: 2006-12-04
Abstract: <P>PROBLEM TO BE SOLVED: To provide a PAM inverter apparatus having a ground fault detection/protection circuit which can safely and securely protect ground without applying stress to a semiconductor element.  <P>SOLUTION: The ground fault detection/protection circuit 1 is provided with a circuit opening/closing part 16 connected to a positive side DC busbar between a secondary smoothing capacitor 12 and an inverter 19, a voltage dividing part 18 which is connected to a power input part of the inverter 19 in parallel and divides voltage of the power input part of the inverter 19, a rectifier 20 rectifying partial voltage of the voltage dividing part 18 and a voltage detector 21 detecting voltage rectified by the rectifier 20. The circuit opening/closing part 16 is closed at the time of supplying power or while a motor is stopped. The presence or absence of ground fault is judged based on a voltage detected by the voltage detector 21. When ground fault is detected, the circuit opening/closing part 16 is kept open.  <P>COPYRIGHT: (C)2008,JPO&INPIT
Patent JP-2008046101-A (JP)
Title: Method and device for evaluating flaw of semiconductor device
Inventor: MIZUKI TOSHIO
IPC: G01N27/00
Filed: 2006-12-05
Abstract: <P>PROBLEM TO BE SOLVED: To provide a method and device for evaluating a flaw of a semiconductor device capable of specifying not only a fault position but also the fault state.  <P>SOLUTION: The method for evaluating the flaw of the semiconductor device comprises a first current detection step of detecting the current generated in the semiconductor device by emitting probe light to the semiconductor device to be evaluated, a flaw position detection step of detecting the flaw position of the semiconductor device from the generated current, a second current detection step of detecting the current at the flaw position by emitting the probe light to the flaw position of the detected semiconductor device with wavelength varied in a predetermined range, and a photo-excitation level detection step of detecting the photo-excitation level of the flaw position from the current at the detected flaw position.  <P>COPYRIGHT: (C)2008,JPO&INPIT