baber/WOPTO huggingface dataset:
Patent TW-464662-B (TW)
Title: Process for producing an aromatic polycarbonate
Inventor: TAKEMOTO HIDEMI
IPC: C08G64/30
Filed: 1998-05-26
Granted: 2001-11-21
Abstract: A process for producing an aromatic polycarbonate through an ester interchange reaction between an aromatic carbonic acid diester and an aromatic dihydroxy compound, wherein the aromatic carbonic acid diester is obtained through the decarbonylation reaction of an aromatic oxalic acid diester represented by the following general formula (1): wherein two Ar's are the same or different aromatic hydrocarbon groups having 6 to 14 carbon atoms, and has a hydrolyzable halogen content of 5 ppm or less. According to the present invention, an aromatic polycarbonate having a high molecular weight and excellent color can be easily produced without impairing ester interchange reactivity for the production of the aromatic polycarbonate by using an aromatic carbonic acid diester obtained through the decarbonylation of an aromatic oxalic acid diester and controlling the amount of hydrolyzable halogen contained in the aromatic carbonic acid diester to a value smaller than a predetermined value.
Patent TW-369771-B (TW)
Title: VGA color signal auto-gain regulator for monitors
Inventor: JIAN ZHENG-BANG
IPC: H04N5/52
Filed: 1998-06-01
Granted: 1999-09-11
Abstract: The present invention relates to a VGA color signal auto-gain regulator for monitors, for the conversion of the analog color signals generated by a VGA display card into a digital color signal, including an analog/digital converter for, based on a maximum reference voltage and a minimum reference voltage, the conversion of said analog color signal into said digital color signal and, when the potential of said analog color signal exceeds said maximum reference voltage, generates an overflow signal and, when the potential of said analog color signal remains below said minimum reference voltage, generates a borrow signal and; a reference voltage processing circuit for the provision of said maximum reference voltage and said minimum reference voltage to said analog/digital converter. Upon receipt of said overflow signal, said reference voltage processing circuit would raise said maximum reference voltage and upon receipt of said borrow signal, said reference voltage processing circuit would lower said minimum reference voltage, for successful conversion of said analog color signal into said digital color signal.
Patent TW-482940-B (TW)
Title: Xerographic toner.
Inventor: BILBREY DAVID BRIAN
IPC: G03G9/097
Filed: 1998-09-25
Granted: 2002-04-11
Abstract: A high speed toner comprising a body of hybrid resin which is about 92 percent by weight polyester and 8 percent by weight polystyrene. Blended in the resin is a charge control agent, a pigment, and about 10 percent by weight of the toner of fumed aluminum oxide. Where the pigments are color-subtractive the charge control agent is a copolymer of styrene and 2-acrylamido-2-methylpropane sulfonic acid. The toner is mixed will a carrier of ferrite particles having a thick silicone coating to remain through the long life of the toner.
Patent TW-I235765-B (TW)
Title: A method for detecting at least one single-stranded or double-stranded nucleotide sequence in a liquid medium
Inventor: WU YUAN-MIN
IPC: G01N/
Filed: 1998-06-30
Granted: 2005-07-11
Abstract: The invention provides a method for rapidly, economically and efficiently sequencing and assaying nucleotides in a liquid medium using laser induced fluorescence of antisense probes, including PNA probes. Fluorescent intensity of the resulting medium is inversely proportional to the hybridization efficiency of the probes with respect to the target sequence. The method is particularly advantageous in not requiring separation of unhybridized probes and hybridization complexes prior to detection. The method can be used to identify accessible regions in folded nucleotide sequences, to determine the number of mismatched pairs in a hybridization complex, and to map genomes.
Patent TW-383440-B (TW)
Title: Structure of MOS transistor testkey
Inventor: CHEN MING-SHIN
IPC: H01L21/66
Filed: 1998-08-13
Granted: 2000-03-01
Abstract: A structure of MOS transistor testkey which allocates floating gates on both sides of single polysilicon gate of the original MOS transistor testkey respectively and makes the distances of floating gates to the said single polysilicon gate and active region edge larger than twice of the minimum interval of neighbored polysilicon gates. And, the invention employs the extra-low resistance characteristics of self-aligned silicide process to sustain the electrical characteristics of single polysilicon gate of the original MOS transistor so that the MOS transistor testkey can effectively reveal the actual conditions of polysilicon pattern of MOS transistor components in the circuit and avoid the influences from photolithographic proximity effect and etch loading effect.
Patent TW-385522-B (TW)
Title: Method of making two component nanospheres and their use as a low dielectric constant material for semiconductor devices
Inventor: AYERS MICHAEL R
IPC: H01L21/316
Filed: 1998-10-06
Granted: 2000-03-21
Abstract: A process is provided for making an insulation layer for use in microelectronic devices. Whereby capacitive coupling and propagation delay in the microelectronic devices are reduced. This invention can include the formation of a stable solution of spherical particles consisting of a ceramic core 10 and a non-polar coating 20. This solution can be applied to an microelectronic substrate and dried to form a continuous porous layer. Novel methods are disclosed for bonding these particles together into an integral layer. Porous layer formed by the process of this invention possess a very low dielectric constant and can be produced using equipment and techniques common and available to those skilled in the art of microelectronic fabrication.
Patent TW-432502-B (TW)
Title: Method of suppressing boron penetration in P+ MOSFETs
Inventor: LI LUNG-SHENG
IPC: H01L21/28
Filed: 1998-09-24
Granted: 2001-05-01
Abstract: With the growing practice of doping gates for MOSFETs with boron, problems have been encountered due to subsequent diffusion of the boron into the active region. In order to solve this problem, argon ions are implanted into the gate pedestal material prior to doping it with boron. The damage caused by the argon ions results in traps that getter the boron atoms, behaving in effect as a diffusion barrier. The invention is directed specifically to gate pedestals that are less than about 3000 Angstroms thick. Under these conditions it has been determined that the implantation energies of the argon ions should not exceed 80 keV. It is also important that the dosage of argon be in the range from 1i 10<SP>15</SP> to 1i 10<SP>16</SP> per cm<SP>2</SP>. Preferably doses in excess of 5i 10<SP>15</SP> should be used as they also lead to improvements in subthreshold swing and hot carrier immunity.
Patent TW-415005-B (TW)
Title: Local oxidation (LOCOS)
Inventor: JIANG MIN-SHIUNG
IPC: H01L21/76
Filed: 1998-10-06
Granted: 2000-12-11
Abstract: A method of forming a field oxide layer on a semiconductor substrate by local oxidation is provided. This method comprises the steps of forming a patterned mask layer on the substrate. A field oxide layer is then formed by two-step dry oxidation. The first step of dry oxidation is to form a thin oxide layer on an area without the mask layer such that the nitrogen out-diffusion between the mask layer and the semiconductor substrate does not occur. The second step of two-step dry oxidation is to form a filed oxide layer under normal temperature after the thin oxide layer is formed.
Patent TW-426999-B (TW)
Title: Integrated circuit memory devices having independently biased sub-well regions therein and methods of forming same
Inventor: LEE KYU-CHAN
IPC: H01L21/8242
Filed: 1998-10-27
Granted: 2001-03-21
Abstract: Integrated circuit memory devices include a semiconductor substrate of first conductivity type (e.g., P-type), a first well region of second conductivity type (e.g., N-type) in the substrate and first and second nonoverlapping sub-well regions of first conductivity type in the first well region. To improve the electrical characteristics of circuits within the memory device, a first semiconductor device is provided in the first sub-well region (which is biased at a back-bias potential (Vbb)) and a second semiconductor device is provided in the second sub-well region (which is biased at a ground or negative supply potential (Vss)). The first semiconductor device is preferably selected from the group consisting of memory cell access transistors, equalization circuits and isolation gates. The second semiconductor device is also preferably selected from the group consisting of column select circuits and sense amplifiers.
Patent TW-507217-B (TW)
Title: Use of melamine resin fibers and insulating materials based on melamine resin fibers and polyalkylene terephtalate fibers
Inventor: BERBNER HEINZ
IPC: D04H1/4326
Filed: 1998-12-03
Granted: 2002-10-21
Abstract: The disclosure is directed to a method of using melamine resin fibers, to an insulating material comprising (a) from 5 to 95% by weight of melamine resin, and (b) from 5 to 95% by weight of polyalkylene terephthalate fibers, and to processes for producing it. A method of using modified melamine resin fibers obtainable by condensational mixture comprising (A) from 90 to 99.9 mol% of a mixture comprising (a) from 30 to 99.9 mol% of melamine and (b) from 1.0 to 70 mol% of a substituted melamine of the general formula I where X1, X2 and X3 are each selected from -NH2, -NHR1 and -NR1R2, subject to the proviso that X1, X2 and X3 are not all -NH2, and R1 and R2 are independently selected from hydroxy-C2-C20-alkyl, hydroxy-C2-C4-alkyl-(oxa-C2-C4-alkyl)n, where n is from 1 to 5, and amino-C2-C12-alkyl, or mixtures of melamines of formula I, and (B) from 0.1 to 10 mol%, based on (A) and (B), of a compound selected from phenols which are unsubstituted or substituted by radicals selected from C1-C9-alkyl and hydroxyl, C1-C4-alkanes substituted by two or three phenol groups, di(hydroxyphenyl) suit ones and mixtures thereof, with formaldehyde or formaldehyde-supplying compounds in a molar ratio of melamines to formaldehyde within the range from 1:1.15 to 1:4.5, as and in thermal and/or acoustic insulating material.
Patent TW-387118-B (TW)
Title: A chip tester
Inventor: WU WEN-TENG
IPC: H01L21/66
Filed: 1998-12-11
Granted: 2000-04-11
Abstract: A chip components. (1) a baseboard; which has an open slot and some through holes in center area and around the area, respectively. These holes are passed through the upper surface and lower surface of the baseboard. A chip is put in the open slot and those plurality through holes whose inner wall covered with conductive material is for the electrical connection. (2) soldering pad; which is is attached on the lower surface and put a cover over the open slot. The surface of pad provides electrical connection for the chip. (3) special carrier plate for linking the chip and the soldering pad to provide the electrical connection.
Patent TW-399198-B (TW)
Title: The digital coding method to reduce the coding bit
Inventor: LI WEN-TZUNG
Filed: 1998-12-29
Granted: 2000-07-21
Abstract: This invention discloses a kind of digital coding method which can reduce the coding bit , it comprises of the following steps: Take a reference point to divide the signal waveform into first zone and second zone, giving a symbol bit value respectively to fold the second zone waveform into the first zone. According to uneven volume's principle, dividing the first zone waveform into many block at the different sizes range. Each block has a different coding bit, and proceeding the coding in each block. Among them, reducing the symbol bit code to the farther distance of reference point. If the symbol bit value is identical with the previous point, take the previous point as its symbol bit value, otherwise, proceeding to code with the code containing of symbol bit.
Patent TW-419909-B (TW)
Title: Radio with halting apparatus and method
Inventor: NORMAN ODED
IPC: H04W52/02
Filed: 1999-02-02
Granted: 2001-01-21
Abstract: A radio (10) executes a method (100) for entering and exiting a halt status. Radio (10) has a control unit (18) and an internal timing unit (16). The timing unit (16) has execution logic (32), a status register (46) a counter (30) and a clock source (37). The control unit (18) writes instructions I(i) and their execution times T(i) to a memory (42) within the execution logic (32). One of these instructions in a 'SWITCH CLOCK' instruction causing the timing unit (16) to switch between clock signals. One of the instructions is 'HALT COUNTER' causing the radio (10) to enter a halt state. The radio (10) can be synchronized to the end of a first communication frame received by it after exiting a halt state.
Patent TW-I250384-B (TW)
Title: Polycyclic resist compositions with increased etch resistance
Inventor: JAYARAMAN SAIKUMAR
IPC: G03F7/039
Filed: 1999-02-22
Granted: 2006-03-01
Abstract: Polycyclic polymers containing pendant aromatic moieties are disclosed. The polymers exhibit light transparency properties to deep UV wave lengths making them useful for high resolution photolithographic applications. These polymers are particularly useful in chemically amplified positive and negative tone resists.
Patent TW-460308-B (TW)
Title: Method for the separation of a liquid mixture consisting of a first and a second liquid and apparatus for carrying out the same
Inventor: MANDRIN CHARLES
IPC: B01D17/025
Filed: 1999-03-24
Granted: 2001-10-21
Abstract: The method serves for the separation of a first liquid from a second liquid, with the one liquid not being soluble in the other, with the first liquid being contained as droplets in the second one, and with the two liquids having different densities. The method comprises the following three steps: 1. for the production of a coalescence of the droplets the liquid mixture is conducted during a first time interval as a turbulent flow through installations (110, 113) in particular through a filler body which can be used in a packing column or through a static mixer, 2. the flow is held at a reduced speed during a second time interval for a further development of the coalescence and 3. finally the flow is conducted at a further reduced speed opposite to or with the force of gravity respectively, with larger descending or rising drops (122) respectively being collected and separated out, whereas smaller droplets (123) are carried along further by the second liquid.
Patent TW-500765-B (TW)
Title: Thermoplastic resin composition and heat-resistant tray for IC
Inventor: NAGASHIMA TOHRU
IPC: C08L69/00
Filed: 1999-05-04
Granted: 2002-09-01
Abstract: A thermoplastic resin composition in which 5 to 45 parts by weight of carbon fiber and 0.1 to 10 parts by weight of conductive carbon black are compounded per 100 parts by weight of resin components comprising an aromatic polycarbonate resin and an aromatic polysulfone resin. The thermoplastic resin composition is excellent in heat-resistance and mechanical strength, and heat-resistant IC trays therefrom are useful products which can endure drying of IC at high temperature and are excellent in handling properties.
Patent TW-427087-B (TW)
Title: Full domain key recovering system
Inventor: HARN LEIN
IPC: H04L9/00
Filed: 1999-05-14
Granted: 2001-03-21
Abstract: A system combining key recovering and public key authentication in the digital communication environment with a plurality of client/server which attaches a public key authentication in the digital message to be transmitted so as to authenticate the signer's identification; meanwhile, the private key can be recovered by the authentication agency. The method has the following steps: firstly, each user must select the modulus, private key and authentication agency and calculate the corresponding public key; separating the private key into several partial private keys and calculating the corresponding partial public keys respectively; transmitting the public data (including the public key, partial public key, authentication agency) and one copy of the partial private key to each authentication agency; then, each authentication agency will apply integrity check on the received data and calculate a partial signature for broadcasting to other authentication agencies; signing the public data and sending back the signature result to the user; thereafter, the user can confirm the returned partial signature and combine all the partial signatures into the required public key authentication.
Patent TW-521069-B (TW)
Title: Novel salicylamide derivatives
Inventor: SEITZ THOMAS
IPC: A01N43/08
Filed: 1996-08-27
Granted: 2003-02-21
Abstract: The invention relates to salicylamide derivatives of the formula (IV-a), and to fungicides comprising them.
Patent TW-402548-B (TW)
Title: Semiconductor manufacturing process for preventing scratches and subsidence caused by the chemical mechanical polishing
Inventor: DENG YUNG-NIAN
IPC: B24B7/24
Filed: 1999-08-12
Granted: 2000-08-21
Abstract: A semiconductor manufacturing process for preventing scratches and subsidence caused by the chemical mechanical polishing: form a device structure on the substrate, then a covering layer is formed on the device structure; and then a dielectric material is formed on the substrate. The chemical mechanical polishing process polishes the dielectric material until the covered layer is exposed. Then, an insulating material having the property of heat conducting is formed on the dielectric material and the device structure. Fill and repair the scratches and subsidence caused by the chemical mechanical polishing by using the insulating material having the heat conducting property, which provides a planar surface to increase the reliability of the device.
Patent TW-554094-B (TW)
Title: P-type ZnO single crystal and method for producing the same
Inventor: YOSHIDA HIROSHI
IPC: C30B23/02
Filed: 1999-10-08
Granted: 2003-09-21
Abstract: This invention provides a p-type ZnO single crystal having a low resistance and a method for producing the same, which comprises providing a substrate (2) in a vacuum chamber (1), supplying the substrate (2) with atomic gases of Zn, O, and N (p-type dopant) and Ga (n-type dopant) in a manner where the feeds of N and Ga are controlled to result in the ratio of N:Ga in a crystal as 2:1, and thereby growing a p-type ZnO single crystal containing N and Ga on the substrate (2).
Patent TW-426780-B (TW)
Title: Construction method and structure of molded structural wall
Inventor: SHIAU JIN-HUEI
IPC: E04B1/62
Filed: 1999-10-21
Granted: 2001-03-21
Abstract: This invention aims to provide a construction method and structure of molded structural wall through the following steps. (1) Set up several erecting columns and horizontal rods to make a cross arranged structure. (2) Embed wall board of self-extinguish foamed plastic material between erected columns and horizontal rods. (3) Envelop external wall with steel net over the outer side of the wallboard. Then set up formed external wall panels and fixing frames on the outer sides. Grout concrete from internal wall side through the holes of the wallboard to combine erected columns, horizontal rods, so the external wall with steel net and concrete of external wall are all together as one body. (4) Set the circuit layout after the concrete becomes dry. Then set internal wall steel net and erect formed internal wall panel with fixing frame for second concrete grouting to combine erected columns, horizontal rods, internal wall net steel and concrete all together as one body. The wallboards will then be totally enveloped. When concrete dry up, dismantling the internal and external formed wall panels and completing, then complete the finish work to make a structure with three-dimensional pattern. And with the wallboard will enhance the fireproof, waterproof, and heat-insulation effect as well as reducing the load to intensify its structural function.
Patent TW-430949-B (TW)
Title: Semiconductor memory device with fuse cutting performance improved
Inventor: KOTOU MAKOTO
IPC: H01L21/82
Filed: 1999-11-09
Granted: 2001-04-21
Abstract: In a method of manufacturing a semiconductor memory device, a first interlayer insulating film is formed to have at least one fuse therein. An etching stopper film is formed on the first interlayer insulating film. A first layer is formed on the etching stopper film. The first layer is etched to the etching stopper film using a first mask. Then, the etching stopper film is etched to produce a fuse cutting window.
Patent TW-494313-B (TW)
Title: Automatic typesetting method for hand-held browsing device
Inventor: CHEN FRED HUAI-YAN
IPC: G06F17/00
Filed: 1999-11-26
Granted: 2002-07-11
Abstract: The present invention is an automatic typesetting method for hand-held browsing device, which includes the following steps: using area spaces to partition the display status, the area is divided into a blank area, a text area, a graphic area and other data areas; defining different data structure according to different data areas and establishing the associated net-like data structure chains; building the stack structure for the blank area; establishing the data structure for the text area and the graphic area; realizing with associated algorithm functions; finally, achieving the object for displaying fruitful mixed typesetting with text and graphic on the hand-held browsing device.
Patent TW-494073-B (TW)
Title: Vehicular anti-theft system and its control method
Inventor: WU WINSON
IPC: B60R25/10
Filed: 2000-01-20
Granted: 2002-07-11
Abstract: The present invention relates to a vehicular anti-theft system consisting of a control unit and a receiver. The control unit is equipped with a central processing unit and a microprocessor and the receiver is connected to the microprocessor to receive signals transmitted from a remote-controlled transmitter. The control unit is also equipped with an input interface for connection with various sensors in the car and an output interface for connection with various anti-theft devices in the car. A PWM (pulse width modulation) indoor-light delayer is equipped between the door sensor and the input interface to provide a voltage pulse signal of width modulation to indoor lights so that indoor lights can gradually go off after delaying for a preset period of time. In the anti-theft setting process, the user may select whether the PWM indoor-light delayer is activated or not. While the vehicular anti-theft system is in anti-theft detecting mode, the system will determine whether the previous time required for shutting the door equipped with the door sensor exceeds the preset period of time (e.g. 3 seconds). If so, the alarm mode will be ignited. If the previous time required for shutting the door equipped with the door sensor does not exceed the preset period of time, the alarm mode will not be ignited so that the vehicular anti-theft system will not be ignited by accident.