baber/WOPTO huggingface dataset:
Patent TW-347344-B (TW)
Title: Rotary filter assembly with blowback outlet adjustment
Inventor: Jon o beard
IPC: B01D33/06
Filed: 1997-04-02
Granted: 1998-12-11
Abstract: A filter assembly comprising: a tank; a support pipe disposed at least partially inside the tank; a filter drum disposed inside the tank, the drum being rotatably mounted to the support pipe for rotation thereabout, the drum carrying a filter element and having an inner surface; a suction source communicating with the support pipe to generate an underpressure inside the drum for pulling filtrate through the filter element from the tank during rotation of the drum; a blowback pipe extending into the support pipe, the blowback pipe being provided at one end with a pipe section traversing the support pipe and extending toward the inner surface; a shoe connected to the pipe section and disposed between the support pipe and the inner surface of the drum, the shoe having a low-friction outer surface; and an adjustment mechanism coupled to the shoe for shifting the shoe radially relative to the support pipe and the drum to maintain the outer surface in substantial engagement with the inner surface of the drum, in opposition to a pressure gradient tending to force the shoe radially inwardly.
Patent TW-393399-B (TW)
Title: Multiple ply tissue paper having plies with and without continuous network regions
Inventor: BARNHOLTZ STEVEN LEE
IPC: B32B7/02
Filed: 1997-05-19
Granted: 2000-06-11
Abstract: A multiple ply tissue paper structure is disclosed. The paper structure includes a ply comprising discrete relatively low density regions dispersed throughout a relatively high density continuous network. The paper structure also include a ply which does not include discrete relatively low density regions dispersed throughout a relatively high density continuous network. The different structures of the two plies provide improved absorbency over a homogeneous structure.
Patent TW-354826-B (TW)
Title: Obturator for a gun
Inventor: MULLER ERNST JOHANN HEINRICH
IPC: F41A3/74
Filed: 1997-05-30
Granted: 1999-03-21
Abstract: An obturation assembly for a gun of the type comprising a barrel of which a rear end defines a firing chamber having an obturation seat and the gun further having a breechblock, the obturation assembly comprising: an obturation set including an annular obturator pad for sealing against the obturation seat; an obturation spindle having a shaft and a head, the shaft extending coaxially through the obturator pad; a first shim for location between the obturation set and the breechblock; and a second shim for location between the obturation set and the head of the obturation spindle.
Patent TW-393831-B (TW)
Title: A high speed and high gain operational amplifier
Inventor: TAN NIAN-XIONG
IPC: H03F1/22
Filed: 1997-08-04
Granted: 2000-06-11
Abstract: The present invention relates to the design of high speed and high gain operational amplifiers for use in for example high performance switched-capacitor analog circuits.  Increasing the gain without suffering the speed may be achieved by designing the amplifier as a single-stage operational tranconductance amplifier with single cascode for the N-type transistors (M8, M9) and double casecode for p-type transistors (M4, M5 and M10, M11).  The invention may also comprise a continuous-time common-mode feedback.  With this design of the invention, high speed and high gain can be maintained with a large phase margin to guarantee the stability.
Patent TW-340977-B (TW)
Title: The producing method for porous silicon superlattice NDR diodes
Inventor: WANG SHOEI-JINN
IPC: H01L29/00
Filed: 1997-09-12
Granted: 1998-09-21
Abstract: A producing method for room temperature porous silicon superlattice negative differential resistance (NDR) diodes, it includes: (a) A Si substrate; (b) Envaporize an Ohm contact metal thin film on back side of Si substrate, to proceed anodization etching; (c) Use anodization etching equipment, etching solution mixed by HF and ethanol, and a current with periodically high/low (H/L) change, to proceed anodization etching on surface of Si substrate, to get porous superlattice structure with periodically H/L porosity; (d) Envaporize another metal film on surface of porous superlattice structure, to get porous silicon superlattice negative differential resistance (NDR) device. Use periodically superlattice quantum structure formed by H/L porosity, to get room temperature negative differential resistance characteristic.
Patent TW-350987-B (TW)
Title: Method of avoiding resistron residue on metal wires
Inventor: LIU JEN-SHIANG
IPC: H01L21/3105
Filed: 1997-09-25
Granted: 1999-01-21
Abstract: A sort of method of avoiding resistron residue on metal wires, including the following steps: provision of a metal layer on a chip; definition of the metal layer layout by means of a resistron layer; forming the metal wire by using the resistron layer as the etching shade on the metal layer in an etching chamber; preheating in a stripping chamber for shortening the temperature balance time of the chip and the stripping chamber; and a stripping step in the stripping chamber to remove the resistron layer.
Patent TW-349853-B (TW)
Title: Disposable bib
Inventor: LAMPSON PATRICIA LEE
IPC: A41B13/10
Filed: 1997-11-11
Granted: 1999-01-11
Abstract: A sort of disposable bib, having a longitudinal central line, a transverse width and a longitudinally extended edge; being at least of the bib extended permanently for space of improvement to the bib.
Patent TW-374847-B (TW)
Title: Testing device for IC devices
Inventor: OKAYASU TOSHIYUKI
IPC: G01R31/26
Filed: 1997-11-14
Granted: 1999-11-21
Abstract: The present invention relates to testing device for IC devices to LSI devices that, controlled by the controlling processor and by means of pattern generator, generates pattern data and expected data, for conversion of said pattern data into rated pattern undulations by means of the undulation circuit and by means of the drive and, on basic voltage, for application of said patterns onto the IC tester, which responding signals, by means of analog comparison circuit, for comparison of logic determination with the basic logic level and, by means of logic comparison circuit, for comparison of the expected data of the generator of said pattern, with determination of qualification, disqualification, with writing of the disqualification data into the failure memory, featuring: including: primary structure of the tester, disposed with said control processor; and the first serial data transmission and receiving means, disposed on the primary structure of said tester, for output of said basic logic level data of said analog comparator and said basic voltage set on said drive as the serial data; and photo conversion means, disposed on the primary structure of said tester, for conversion of said serial data into photo signals; and the tester head, disposed thus to have the test patterns be applied on said drive of said IC in testing, and analog comparator for determination of the responding logic; as well as the photo conversion means, disposed on said testing head.
Patent TW-345699-B (TW)
Title: Process for reducing surface dissolution of photoresist
Inventor: KUANQ DONG-YUAN
IPC: H01L21/30
Filed: 1997-12-03
Granted: 1998-11-21
Abstract: A photoresist treatment process for reducing surface dissolution of a photoresist, the process at least comprising: providing a semiconductor substrate including an un-exposed photoresist layer formed on the semiconductor substrate; forming a dissolution inhibiting layer on the photoresist layer; exposing the semiconductor substrate thereby transferring a pattern defined on a mask to the photoresist layer, the photoresist layer containing a pattern region which is to be retained and a non-pattern region which is to be removed; and developing the photoresist layer thereby removing the non-pattern region and retaining the pattern region, the dissolution inhibiting layer being used to inhibit the dissolution of the pattern region on the photoresist layer during the process of developing, thereby reducing the dissolution of a surface portion of the pattern region.
Patent TW-365724-B (TW)
Title: Device and method for a telecommunications system
Inventor: HALLENSTAAL MAGNUS
IPC: H04L12/00
Filed: 1997-12-18
Granted: 1999-08-01
Abstract: The present invention relates to a device and a method for communication in a means of conveyance by a cordless telecommunication system, particularly by a DECT (digital European cordless telephony)-based CTM (cordless terminal mobility)-system. The device comprises at least one mobile base station (BS11, BS12, BS) and a mobile transceiver (STCM 1, STCM2), both mounted on a means of conveyance (T, B). The device is further disposed to be able to communicate, on the one hand, with a portable subscriber unit (PA) on or in the means of conveyance (T, B) and compatible with the cordless telecommunication system (CTMNW1), via an air interface (LG1) and, on the other hand, with the cordless telecommunication system (CTMNW1) via a fixed connection (POWC, STCF11, STCF12), which preferably includes an existing power cable (POWC) or conductor rail, or via a cellular network (GSMNW), particularly of the type GSM.
Patent TW-381284-B (TW)
Title: Electron gun
Inventor: SHIROISHI TETSUYA
IPC: H01J37/065
Filed: 1997-12-20
Granted: 2000-02-01
Abstract: The subject of present invention is to achieve an electron gun which can effectively improving the focusing characteristics of electron beam; furthermore, to achieve an electron gun which can simply proceed the assembly process. The solution is that in the electron gun having cathode for emitting electrons and with a plurality of electron passing holes of gratings used for guiding the electrons from the cathode to a certain direction where the electron emitting region on the electron emitting face of the cathode is formed as a belt-like shape; further, the length of short edge of the belt-like region is configured as the length below 80% of the diameter of the electron emitting region while unlimiting the electron emitting region and employing the maximum available current.
Patent TW-399029-B (TW)
Title: Graphite powder suitable for negative electrode material of lithium ion secondary batteries
Inventor: MORIGUCHI KOJI
IPC: C01B31/04
Filed: 1997-12-24
Granted: 2000-07-21
Abstract: A graphite powder has surface closed-end structures in which the graphite c-plane layers of the graphite layer crystal lattices have closed-ends on the surface of the graphite powder by linking the ends of one or more pairs of the c-plane layers, leaving interstices which are open on the surface of the graphite. The number of open interstices is at least 100 and at most 1500 per micrometer in a c-axis direction of the graphite. Preferably, the graphite powder has a specific surface area of 1.0 m<2>/g or less. Such a graphite powder can be prepared either by graphitizing a carbon material, which has been pulverized at a high speed under well-controlled conditions before and/or after the carbonization, or by subjecting a carbon material, which has been pulverized under well-controlled conditions before and/or after the carbonization, to graphitization and then to oxidative heat treatment at a temperature of 600-800 DEG C and finally to heat treatment at a temperature of 800 DEG C or higher in an inert gas. The graphite powder can be used to produce negative electrodes of lithium ion secondary batteries having a high discharge capacity of at least 320 mAh/g and a high charge/discharge coulombic efficiency of at least 90%.
Patent TW-369449-B (TW)
Title: Apparatus and method for measuring the depth of molten steel and slag
Inventor: USHER JOHN D
IPC: G01F23/24
Filed: 1998-02-03
Granted: 1999-09-11
Abstract: Both an apparatus and method for measuring the depth of slag and molten metal contained in a tundish, ladle, electric furnace, or other vessel is provided. The apparatus includes a voltmeter for comparing the electrical potential of the steel, the slag-steel interface, and the air-slag interface to a ground potential, in combination with a probe member formed from a conductive material. The probe member has a proximal end that is electrically connected to the voltmeter, and a distal end movable between the vessel floor and one or the other of the interfaces. The apparatus further includes an articulated arm for moving the distal end of the probe member in the vessel and across the molten metal, and at least one of the other two interfaces. The depth of the molten metal or slag is determined by noting differences in the electrical potential detected by the voltmeter while monitoring the vertical position of the distal end of the probe member in the vessel. The probe member may be formed from an electrically conductive ceramic material, and may simultaneously take the form of a protector tube for another probe. Alternatively, the probe may take the form of the stopper rod normally used to modulate the flow of liquid steel out of the ladle, tundish, or other vessel.
Patent TW-364190-B (TW)
Title: Method for forming rugged bottom electrode of memory cell
Inventor: Wang quan-zhong
IPC: H01L21/8239
Filed: 1998-01-23
Granted: 1999-07-11
Abstract: The present invention provides a method for forming rugged bottom electrode of memory cell, comprising forming a titanium metal layer on the surface of polysilicon block which is subsequently used as bottom electrode, a thermal process being then carried out to form a titanium silicide layer on the said polysilicon block surface, and, removing the above titanium silicide layer by way of wet etching or dry etching to obtain rugged polysilicon block as the bottom electrode of a capacitor.
Patent TW-388699-B (TW)
Title: Method and apparatus for processing tobacco
Inventor: CUNNINGHAM WILLIAM
IPC: A24B5/00
Filed: 1998-02-02
Granted: 2000-05-01
Abstract: A method for processing tobacco comprises threshing tobacco leaves to form a mixture of free lamina, clean stem pieces from which lamina has been completely or substantially completely removed and unclean stem pieces which have useful pieces of lamina attached thereto, sifting to separate the clean stem pieces from the unclean stem pieces and subjecting the unclean stem pieces to additional threshing by recycling the unclean stem pieces to the thresher. The apparatus for carrying out the method may comprise a sieve.
Patent TW-455537-B (TW)
Title: The processing of hybrid high-temperature microwave component
Inventor: WENG BIING-JYH
IPC: B32B18/00
Filed: 1998-03-19
Granted: 2001-09-21
Abstract: The present invention relates to a method for designing and producing a multi-layer composite high-temperature microwave material or component, which comprises: using a high-temperature quartz fiber cloth or S-type fiber cloth-reinforced aluminum phosphate ceramic composite material as the outer layer, and a fiber cloth-reinforced aluminum phosphate or epoxy resin or silicon resin composite material as an inner layer; and using a thermal molding or a pressure autoclave or a female molding to produce a microwave component. The composite material can be designed into a product (1) having a good surface temperature resistance, or (2) having a good integral structural strength, or (3) having a good microwave electrical property. The characteristic of the present invention is to design or produce a composite high-temperature microwave material or component that meets multiple performance requirements.
Patent TW-358782-B (TW)
Title: Vibration reducing system for automotive vehicle
Inventor: SUZUKI YASUHIRO
IPC: B60K5/12
Filed: 1998-03-19
Granted: 1999-05-21
Abstract: In a vibration reducing system, an insulator is disposed between the engine and a vehicle body. A vibration damper such as a dynamic damper is secured to the insulator at a side which is distal from the power unit (viz., an engine and/or transmission/transaxle) and connected to an outboard end of a pin which extends away from the engine. The installation of the vibration damper minimizes the amount of space required and is effective to reduce the vibration and the noise even when the mass of the components is small since the device is disposed at a location where the amplitude of the vibration tends to maximize.
Patent TW-368669-B (TW)
Title: Sealing profile for sealing a power-actuated closing device
Inventor: GLAGOW KLAUS
IPC: B60J10/82
Filed: 1998-05-08
Granted: 1999-09-01
Abstract: The invention refers to a sealing profile for sealing a power-actuated closing device, particularly a sliding roof on a motor vehicle. The sealing profile is developed as a hollow profile made of elastomer material having an essentially plane base area and extending therefrom a cambered profile area enclosing a hollow chamber. Pinching protection means are integrated into the sealing profile without affecting the sealing function. For this purpose, two contact elements developed as co-extruded, electrically conductive profile areas arranged in a spaced relationship to each other are provided in the base area. Further, a contact area developed as co-extruded, electrically conductive profile area is provided on the interior side of the cambered profile area. In case of pinching, a contact will be produced either between the contact elements or by guiding said contact area towards the two contact elements, depending on the angle of attack.
Patent TW-375810-B (TW)
Title: Process for forming buffer layer free of black dot dishing
Inventor: KU CHI-FA
IPC: H01L21/77
Filed: 1998-05-26
Granted: 1999-12-01
Abstract: A process for forming buffer layer free of black dot dishing on semiconductor substrate having a plurality of regional structures on it, comprising the following steps: creating a first buffer layer on said substrate and regional structures; carrying out thermal flow process to cause the buffer material flowing into the gaps among regional structures; removing the first buffer layer in areas other than the gaps; building a second buffer layer on the first buffer layer and regional structure. The following steps can be added to the process: carrying out a second soft bake process after the formation of second buffer layer, and a pattern process on second buffer layer after said second soft bake process to define the structure and pattern of second buffer layer.
Patent TW-390977-B (TW)
Title: Method of forming mask
Inventor: TU JR-CHIANG
IPC: G03F1/00
Filed: 1998-09-21
Granted: 2000-05-21
Abstract: The invention provides a mask and the method of forming the mask that has dense line as well as large separation line at the same time. In the area of larger line separation, pattern is formed by the weakened phase shift material. In the area of smaller line separation, opaque material is stacked on the phase shift weakened material to form double-layer pattern. Data used in designing mask is analyzed to determine which area is going to use the weakened phase shift material and which area is going to stack opaque material to form double-layer pattern. Then the mask is shined by the off-axis lighting method (the best by using four-pole off-axis lighting). The mask is not fabricated by making the photoresist expose just one kind of electron beam dose, therefore only one layer of photoresist is needed on the mask to form the area that uses weakened phase shift material and the double-layer pattern area that uses two layers of material, respectively.
Patent TW-396425-B (TW)
Title: Structure and method for inhibiting cobalt silicide agglomeration on polysilicon layer by nitrogen implantation
Inventor: SHIU CHING-SHIANG
IPC: H01L21/28
Filed: 1998-09-30
Granted: 2000-07-01
Abstract: This is the structure and method for inhibiting cobalt silicide agglomeration on polysilicon layer by nitrogen implantation. First, a substrate with the first gate, the first spacer, the second gate, and the second spacer are offered. Then, a global nitrogen implantation, which is the characteristic of the present invention, is proceeded. The implanted nitric ion is diffused by thermal annealing step. Next, the second gate and the second spacer are covered to implant the first type ion in the first gate. The first spacer forms the first type heavy dopant area. Thereafter, the first gate and the first spacer are covered to implant the second type ion in the second gate; the second spacer forms the second type heavily doped area. Finally, a cobalt silicide is deposited on semiconductor substrate, the first gate, the first type heavily doped area, the second gate, and the second type heavily doped area.
Patent TW-397736-B (TW)
Title: Ratchet wrench
Inventor: ROBERTS PETER M
IPC: B25B23/00
Filed: 1998-10-07
Granted: 2000-07-11
Abstract: A ratchet wrench including a handle, a drive stud, and a ratchet mechanism further includes a tool release mechanism. The tool release mechanism includes a tool release actuator which forms a recess. A reversing lever is coupled to the ratchet mechanism and is movable to forward, non-ratcheting and reverse positions to select a forward ratchet direction, a non-ratcheting action, and a reverse ratchet direction, respectively, for the ratchet mechanism. The direction control element carries a protruding element that is shaped to fit into a recess in the tool release actuator when the direction control element is in the forward position, to remain outside the recess when the direction control element is in the non-ratcheting position, and to fit into the recess when the direction control element is in the reverse position. The protruding element impedes inadvertent operation of the tool release mechanism when the direction control mechanism is in either the forward or the reverse position. The direction control element can be mounted internally or externally of the wrench, and the ratchet wheel of the ratchet mechanism can be centered by a protruding element formed on an inner surface of the handle and sized to slide within an annular recess of the ratchet wheel.
Patent TW-470998-B (TW)
Title: Integrated circuit inductor with three-dimensional helix structure
Inventor: CHEN JIN-LAI
IPC: H01L21/00
Filed: 1999-01-15
Granted: 2002-01-01
Abstract: The present invention relates to an integrated circuit inductor with three-dimensional helix structure, whose structure at least comprises plural conductor bars and plural conductor rods. These conductor bars are approximately parallel to the substrate and are divided into two parallel parts. These conductor rods are used to connect these conductor bars, each conductor rod connects one end of a conductor bar of some portion of conductor bars to one end of a conductor bar of some portion of conductor bars. Furthermore, each conductor bar does not go across each other, so as to form a three-dimensional helix structure parallel to the substrate. In addition, by using the accumulated channel structure, a single conductor bar can be replaced by plural conductor bars, and further increase the cross sectional area of the inductor structure and its inductance. At the same time, Copper conductor bars and conductor rods can be manufactured by embedding method to further reduce the resistance.
Patent TW-387974-B (TW)
Title: High pressure fuel pumping apparatus
Inventor: ONISHI YOSHIHIKO
IPC: F02M55/00
Filed: 1999-02-19
Granted: 2000-04-21
Abstract: The present invention relates a high pressure fuel pumping apparatus, which can  improve durability of a fuel sealing metallic bellows used to prevent fuel from leaking through the clearance between cylinder and piston to outside, and obtain reliability and lower cost. A drain passage 12 for fuel leaked from the inside of a fuel sealing metallic bellows 26 and a drain passage 13 for a high pressure fuel regulator 8 are merged. A lead-type check valve 17 is located upstream in the drain passage 12 between the merging point 14 and the fuel sealing metallic bellows 26, and a ball-type check valve 18 is located downstream in the drain passage 12.