baber/WOPTO huggingface dataset:
Patent KR-910004622-B1 (KR)
Title: Electric conducting level detecting circuit
Inventor: KIM YOUNG-IN
IPC: G01F23/00
Filed: 1988-08-05
Granted: 1991-07-08
Abstract: The sensor pins are selected  sequentially  by  applying  the clock count signal to detect the level of the solid body or liquid and the count signal by which the level is detected is  displayed. Two sensors are seclected  sequentially  by  a  demultiplexer  and transistor to decrease the oxidation  of  the  sensors  caused  by constant power supply. No fluid level between two selected sensors causes open state of the sensing loop which generates  high  level signal bya  comparator.  When  thr  fluid  level  is  between  the sensors, the power is supplied to the selection  terminal  of  the multiplexer through the sensors and the comparator  generates  low level signal which causes one shot pulse in the flip-flop. The one short pulse is transmitted to the seven segment driver (27,28)  to display the detection of the fluid level.
Patent KR-960006756-B1 (KR)
Inventor: FILLIMAN PAUL DEAN
IPC: H04H20/88
Filed: 1988-08-30
Granted: 1996-05-23
Abstract: 내용없음
Patent KR-920008740-B1 (KR)
Inventor: HAYAKAWA TSUYOSHI
IPC: G04B19/02
Filed: 1988-09-23
Granted: 1992-10-08
Abstract: 내용 없음.
Patent KR-950006729-B1 (KR)
Title: Holograms
Inventor: INGWALL RICHARD T
IPC: G03F/
Filed: 1987-12-18
Granted: 1995-06-21
Abstract: Volume phase holograms and other holographic elements which include microscopic areas of a material having an index of refraction different from that of the holographic fringes.
Patent KR-0138650-B1 (KR)
Inventor: CHON YOUNG-KWON
IPC: H01L21/18
Filed: 1989-06-27
Granted: 1998-06-15
Abstract: 내용 없음
Patent KR-960006314-B1 (KR)
Inventor: MIZUSHINA FUMIO
IPC: G01M13/02
Filed: 1989-11-13
Granted: 1996-05-13
Abstract: 내용 없음.
Patent KR-0142578-B1 (KR)
Inventor: CLAUSEN JOHANNES
IPC: G03B21/625
Filed: 1989-12-07
Granted: 1998-07-15
Abstract: 내용없음
Patent KR-920002061-B1 (KR)
Inventor: YANO HISASI
IPC: B01D19/00
Filed: 1989-12-20
Granted: 1992-03-10
Abstract: 내용 없음.
Patent KR-960009575-B1 (KR)
Title: Process for transfer pattern printing of a moist textile web, as well as a pattern carrier web for use in the process
Inventor: AKERBLOM INGA S
IPC: D06Q1/00
Filed: 1988-10-04
Granted: 1996-07-20
Abstract: PCT No. PCT/DK88/00162 Sec. 371 Date Apr. 30, 1990 Sec. 102(e) Date Apr. 30, 1990 PCT Filed Oct. 4, 1988 PCT Pub. No. WO89/02950 PCT Pub. Date Apr. 6, 1989.In a process for transfer pattern printing of a moist textile web consisting wholly or predominantly of natural fibers, in particular cotton, and/or artificial fibers on the basis of cellulose, the pattern carrier web is a web of paper or a paper-like material which carries a pre-printed pattern of a water soluble or dispersable dye. After wetting of the textile web to a carefully controlled moisture, the textile web is joined with the pattern carrier web and the joined webs are compressed at a suitable pressure so that the pattern can be transferred without using heat. The advantage is that it will be possible to avoid both heating and use of organic solvents. It is also possible to transfer a pattern to a colored textile web since the textile web may be wetted before hand with an aqueous dye solution or dispersion instead of undyed liquid.
Patent KR-910010017-B1 (KR)
Title: Apparatus for removing dungs of fishes in fish farm
Inventor: BEAK BOK-CHON
IPC: A01K61/00
Filed: 1990-02-26
Granted: 1991-12-10
Abstract: The apparatus (1) for removing fish  meal  and  excretion  in water comprises a means for  rotating  a  roller  (3)  engaging  a nonwoven fabric belt (2) by motor (M),  a  means  for  circulating water including fish meal in the fish tank through  the  apparatus (1), a means for removing fish meal from the nonwoven fabric  belt (2) by spraying water with sprayer (6) into  a  slanted  collector (9) to be discharged from drain (12).
Patent KR-930000384-B1 (KR)
Title: Outlet structure of magnetron
Inventor: LEE CHUN-BAE
IPC: H01J23/15
Filed: 1990-03-19
Granted: 1993-01-16
Abstract: The structure of the output side comprises the first magnetic pole piece (6) arranged at the opening  part  of  output  side,  a cylindrical first metal pipe (18) sealed from projected  anode,  a ceramic insulating pipe (19) connected to the metal pipe  (18),  a conductor (24) for leading out the  microwave,  a  first  cylinder (20) for harmonic choke, a second cylinder (21) for harmonic choke of inverse U-shape. The structure has the cylinder (33a) with λ/4 of the first harmonic wave (λ), the second metal pipe (33)  formed with λ'/2 slot (33c) of the second harmonic  wave  (λ'),  a  third metal pipe (34) with λ"/4 cylinder (34a)  of  the  third  harmonic wave (λ").
Patent KR-930011186-B1 (KR)
Title: Printer head driving circuit
Inventor: SHIN HYON-JUN
IPC: B41J29/38
Filed: 1990-05-24
Granted: 1993-11-25
Abstract: The driving circuit of a dot-matrix type print  head  and  of driving of Bi-level comprises: a  print  heat;  the  first  driver which connects between the print head and the input  terminal  and supplies print head with the first voltage (VH) the second voltage supply which supplies in one-direction-only the second voltage  at any time and connects to the input terminal of the print head from the second voltage lower than the first voltage; the second driver and current- voltage converter which  change  electric  current  to voltage of the print head and form current loop of the print head; the  upper/lower limit  current  detector   which   detects   the upper/lower limit currents of driving current of the print head by comparing voltage outputted from the current-voltage converter and the driver control unit connected between output terminal  of  the upper/lower limit current detector and the control terminal of the first driver.
Patent KR-920004053-B1 (KR)
Inventor: TANAKA KASHIRO
IPC: B65H23/198
Filed: 1990-06-28
Granted: 1992-05-23
Abstract: 내용 없음.
Patent KR-920008429-B1 (KR)
Inventor: TOSHIHIKO MATSUDA
IPC: G06F12/16
Filed: 1990-07-11
Granted: 1992-09-28
Abstract: 내용 없음.
Patent KR-950012723-B1 (KR)
Title: Process for producing styrene polymers
Inventor: MASAHIKO KURAMOTO
IPC: C08F12/00
Filed: 1990-09-29
Granted: 1995-10-20
Abstract: Disclosed is a process for producing a styrene polymer having a syndiotaotic configuration and a wide molecular weight distribution, which is characterized by using as catalyst (a) two or more kinds of titanium compounds and (b) alkylaluminoxane, in the polymerization of styrene monomers. According to the process of the present invention, a styrene polymer which is excellent in physical properties such as heat resistance because of a high syndiotacticity, and also has a wide molecular weight distribution can be obtained. These styrene polymers can be suitably used as materials for various moldings including hollow molding, sheet molding, and film molding.
Patent KR-100197326-B1 (KR)
Title: Insulating alkenyl aromatic polymer foam
Inventor: SUH KYUNG WON
IPC: C08J9/14
Filed: 1990-11-07
Granted: 1999-06-15
Abstract: Alkenyl aromatic thermoplastic synthetic resinous elongate foam bodies having a machine direction, a traverse direction and closed noninterconnecting gas-containing cells are prepared using at least 70 percent by weight of 1,1,1-trifluoroethane and or 1,1,1,2-tetrafluoroethane as a blowing agent or part of a blowing agent mixture. These foam bodies have an average cell size of 0.01 to 0.3 millimeters, a density of from 0.75 to 6.0 pounds per cubic foot, an absolute dimensional stability of less than 4 percent in any direction when measured by the test designated ASTM D2126/C578, and preferably a minimum cross-sectional dimension of at least 0.25 inch, a cross-sectional area of at least 8 square inches, a water vapor permeability not greater than 1.8 perm inches. A cell size enlarger agent may be necessary for cell sizes in the 0.2-0.3 range.
Patent KR-930007373-B1 (KR)
Title: Auto picture level adjusting method
Inventor: BAEK UN-KIL
IPC: H04N5/445
Filed: 1990-12-27
Granted: 1993-08-09
Abstract: setting  the Auto- picture  mode;  inputting   Auto-picture   adjustment   value (S2,S3) ; checking the value and  limits  and  determining  whether they are to be saved; displaying the Auto-picture level adjustment value on screen (S6); reading the selected Auto-picture  contrast, brightness, color and tint; adding them to  the  saved  value  and then outputting the Auto-picture level value (S7-S10).
Patent KR-930000434-B1 (KR)
Title: Outside magnetic field shelter method of colar picture tube
Inventor: KIM SONG-KIL
IPC: H05K9/00
Filed: 1990-12-29
Granted: 1993-01-21
Abstract: The method prevents the distortion of electron  beam  passage caused by the outer magnetic field. A ferrous  powder  layer  (18) mixed with adhesive is coated on the outer face of the CRT  funnel (11) and the carbon layer (8) is  coated  on  the  ferrous  powder coated layer not to oxidise with outer oxygen. The ferrous  powder can be replaced by the semi-magnetic material such as copper.
Patent KR-940006216-B1 (KR)
Title: Olefin polymerization catalyst and process for the polymerization of olefins
Inventor: TSUTSUI TOSHIYUKI
IPC: C08F4/654
Filed: 1990-12-29
Granted: 1994-07-13
Abstract: In accordance with the present invention, there are provided olefin polymerization solid catalysts comprising   [A] a solid titanium catalyst component containing titanium, magnesium and halogen as its essential ingredients, said catalyst component having supported thereon [B] a transition metal compound containing a ligand having a cycloalkadienyl skeleton and, if necessary,   [C] an organoaluminum oxy-compound.   In accordance with the invention, there are also provided olefin polymerization solid catalysts comprising   [i] a solid containing a transition metal compound containing a ligand having a cycloalkadienyl skeleton, said solid having supported thereon [ii] a titanium catalyst component containing titanium, magnesium and halogen as its essential ingredients and, if necessary,   [iii]an organoaluminum oxy-compound. I
Patent KR-930008074-B1 (KR)
Title: Method of fabricating for memory cell
Inventor: KIM IK-NYON
IPC: H01L27/04
Filed: 1991-01-19
Granted: 1993-08-25
Abstract: A memory cell, which comprises  a  gate  having  an  expanded effective channel length and a  large  capacitance  capacitor,  is prepared by (1) forming a block oxide film by  photo-etching,  (2) depositing a thin polysilicon film for a transistor  channel,  (3) eliminating the polysilicon on a field region, (4)  annealing  for recrystallization,  (5)  depositing  a  thick  polysilicon   film, forming a side wall polysilicon film by etching and annealing, (6) forming  a  gate  oxide  film  over  all  region  and  forming   a source/drain region by ion-implaning on the side wall  polysilicon film, (7) forming a gate polysilicon film on an  activated  region and a  field  region  and  forming  a  contact  between  gates  by photo-etching, and  (8)  forming  a  polysilicon  film  for  stack structure and a polysilicon film for storage node, and  forming  a capacitor dielectric film and a plate polysilicon film in turn.
Patent KR-100215752-B1 (KR)
Inventor: YOU YEONG-GON
IPC: H04N1/00
Filed: 1991-01-24
Granted: 1999-08-16
Abstract: 본 발명은 팩시밀리에서의 착신 메시지 재 송신 방법에 관한 것으로, 특히 부재시에 수신된 화상데이타를 기억시키고 외부 전화를 통해 팩시밀리가 인식할 수 있는 암호와 일치되면 수신된 기억 화상데이타를 다른 장소에 있는 팩시밀리도 수신할 수 있도록 한 것이다. 
     본 발명은 수신 자동모드인 상태에서 링신호가 검출되면 설정된 플래그를 판단하여 기능설정이 되어 있지 않은 경우에는 일반적인 팩시밀리 수신기능을 수행하여, 기능설정이 되어 있는 경우에는 상대방측의 호출톤 신호(CNG)가 입력되는가를 판단하여 그의 호출톤 신호(CNG)검출이 없으면 호출국 확인신호(CED)와 디지탈 확인신호(DIS)를 송출함과 동시에 다시 상대방의 팩시밀리 송신모드 또는 전화 통화 모드인가를 확인하고, 상기 호출톤 신호(CNG)검출과 상대방으로부터 디지탈 명령신호(DCS)와 트레이닝 검사신호(TCF)가 입력될 경우에는 상대방측을 팩시밀리 송신 프로토콜로 판단하여 상기한 팩시밀리 수신기능을 수행하는 제 1 과정과; 디지탈 명령신호(DCS)와 트레이닝 검사신호(TCF)가 없는 경우에는 팩시밀리 송수신 모드가 아닌 전화 통화 모드로 인식하여 현재 메모리 버퍼(2)에 기억된 수신데이타의 유, 무에 따라 본검출부(3)를 통해 암호를 비교하여 소정의 시간이 경과할 때까지 설정된 암호와 일치하지 않을 경우에 국선(L1, L2)을 차단시키며, 설정된  암호와 일치할 경우에는 상대방측 팩시밀리의 스타트키를 입력시키라는 메시지(DGM)를 송출함과 동시에 상대방측의 팩시밀리로부터 호출톤 신호(ONG)가 송출되면 송신모드로 변환시킴과 동시에 수신데이타를 상대방측 팩시밀리로 재 송신시키고 종료하는 제 2 과정으로 이루어진 것으로, 팩시밀리의 송, 수신 장치에 채용함을 특징으로 한다.
Patent KR-940001367-B1 (KR)
Title: Index page searching method and apparatus of teletext
Inventor: PARK HYON-JONG
IPC: H04N7/035
Filed: 1991-04-12
Granted: 1994-02-19
Abstract: The detector comprises a number of memories for storing by screens index page data among the teletext information output from the teletext processor. A user designated storage stores user designated page data according to key input from a user. An index page storage sequentially reads out an index page corresp. to the key designation from a number of index page data stored by screens in the memories and stores the page. An index page storing discriminator compares signals output from the index page storage and user designated page storage to discriminate whether or not a desired index page is stored. The result is supplied to the controller. The display screen displays the fact that the page is not stored on receipt of a corresp. control signal from the controller.
Patent KR-960002562-B1 (KR)
Inventor: IRINO YASUMI
IPC: F04C28/00
Filed: 1991-05-14
Granted: 1996-02-22
Abstract: 내용 없음.
Patent KR-950009069-B1 (KR)
Inventor: DAMANOI YUTAKA
IPC: G02F1/13
Filed: 1991-05-15
Granted: 1995-08-14
Abstract: 내용 없음.
Patent KR-940004413-B1 (KR)
Title: Compound semiconductor device and making method thereof
Inventor: LEE SANG-HO
IPC: H01L21/334
Filed: 1991-08-14
Granted: 1994-05-25
Abstract: a field effect transistor comprising a first conductive-type first semiconductor layer formed on the surface of substrate, a first conductive-type second semiconductor layer, second conductive-type third semiconductor layer, first conductive-type fourth semiconductor layer, undoped fifth semiconductor layer and first conductive-type sixth semiconductor layer, a first conductive-type seventh semiconductor layer, a source and drain electorode formed on the seventh layer, a gate electrode formed on the exposed sixth layer; a laser diode comprising a first conductive-type first semiconductor layer substrate, a first conductive-type second semiconductor layer, second conductive-type third semiconductor layer and first conductive-type fourth semiconductor layer, a second conductive-type electorode on the fourth semiconductor layer, a second conductive-type diffusion region formed bottom of the second electrode and a first conductive-type electorde formed bottom of the compound semiconductor substrate.
Patent KR-940002915-B1 (KR)
Inventor: NISHIGUCHI MASANORI
IPC: H01L21/306
Filed: 1991-08-20
Granted: 1994-04-07
Abstract: 내용 없음.
Patent KR-940003347-B1 (KR)
Title: Oscillator
Inventor: JU HYON-MO
IPC: H03B5/00
Filed: 1991-09-13
Granted: 1994-04-20
Abstract: The circuit generates lower frequency than the previous oscillation circuit, using a coil having the same inductance. The device includes a 1st resistor (R5) which applies clock to one terminal of coil (L2), a 2nd resistor (R6) which applies clock to other terminal of coil (L2), a 3rd resistor (R4) which outputs an enable signal after a specified delay time, a clock generator (30) which has a 1st NAND gate (32) that outputs a negated logical product between enable signal and 2nd resistor output signal, and a 2nd NAND gate (34) that outputs a negated logical product between enable signal and 1st resistor output signal, a 1st diode (D2) which gives a discharge path of current that flows a coil (L2) connected with a 1st resistor (R5), and a 2nd diode (D3) which gives a discharge path of current that flows a coil (L2) connected with a 2nd resistor (R6).
Patent KR-950004118-B1 (KR)
Inventor: HANG HSEUH-MING
IPC: H04N7/30
Filed: 1991-09-17
Granted: 1995-04-25
Abstract: 내용 없음.
Patent KR-950001054-B1 (KR)
Inventor: YOSHIMURA YUMI
IPC: G02F1/13363
Filed: 1991-09-27
Granted: 1995-02-08
Abstract: 내용없음.
Patent KR-940003216-B1 (KR)
Title: Semiconductor package
Inventor: KWON YONG-SHIN
IPC: H01L21/56
Filed: 1991-10-10
Granted: 1994-04-16
Abstract: The package comprises two PCBs attached to each other, dipads for mounting a semiconductor chip on them, bonding pads formed on the semiconductor chip, wires for connecting the bonding pad with the PCB, dams for placing the chip and the pad, a protecting material filling the inside of the dams, contact pins installed on the peripherals of the PCBs, and inserting terminals connected to the contact pins.
Patent KR-960016835-B1 (KR)
Inventor: KOTAMA NORIAKKI
IPC: H01L29/78
Filed: 1991-10-15
Granted: 1996-12-21
Abstract: 요약없음
Patent KR-940001980-B1 (KR)
Inventor: SHUTPIN MELBIN W
IPC: H04W76/02
Filed: 1991-11-08
Granted: 1994-03-12
Abstract: 내용 없음.
Patent KR-950007746-B1 (KR)
Title: Carriage motor driving method in printer
Inventor: LIM HYONG-YONG
IPC: B41J19/00
Filed: 1991-12-11
Granted: 1995-07-14
Abstract: The method includes the steps of dividing the driving area of printer carriage motor into 6 steps, calculating a moving start position (MSTPOS) and a moving end position (MENPOS) as motor driving positions to load a carriage motor driving data and a head driving data by print modes to discriminate an unidirectional printing state, discriminating a current carriage position (CCPOS) is not greater than the MSTPOS to process alpha area and beta area, discriminating the CCPOS is not greater than (PSTPOS + PENPOS)/2, and processing the beta area or discriminating the CCPOS is not less than the MENPOS to process delta area or gamma area, thereby differently setting the carriage driving formats according to printing modes to improve the printing ability.
Patent KR-940006613-B1 (KR)
Title: Multi-bit parallel test structure of dynamic ram
Inventor: OH JONG-HUN
IPC: G11C29/00
Filed: 1991-12-27
Granted: 1994-07-23
Abstract: By storing a same data on a memory cell block through four input/output ports, comparing each signal at one exclusive NOR gate and checking the comparative output signal, this test structure decides whether a DRAM is good or not, and comprises: an input confrontation means for corresponding to input/output terminal by dividing each cell block with two groups for storing a data; a comparator means for outputting high signal when all the input signals are equivalent, low signal when at least one signal are distinct; and an output means for outputting the output signal through one input/output terminal (13A) and maintaining other terminal at high state.
Patent KR-100216329-B1 (KR)
Title: Perfluorovinyl compounds
Inventor: BABB DAVID A
IPC: C07C41/01
Filed: 1991-02-08
Granted: 1999-08-16
Abstract: Compounds have a structure represented by Formula I: CF2=CF-X-R-(X-CF=CF2)m wherein R represents an unsubstituted or inertly substituted hydrocarbyl group; each X is independently selected from the group consisting of groups having at least one non-carbon atom between R and -CF=CF2; and m is an integer of from 1 to about 3. Polymers formed from such compounds are also prepared. The compounds are preferably prepared by a method by a process comprising the steps of: (a) forming a salt having anion corresponding to a compound of Formula II: HX-R-(XH)m;  wherein X, R and m are as defined for Formula I; (b) reacting the salt with a 1,2-dihalo-1,1,2, 2-tetrafluoroethane wherein the halo groups are iodine, bromine, chlorine or mixtures thereof, at least one halo group being bromine or iodine, to form a compound of Formula III: Z-CF2CF2-X-R-(X-CF2CF2- Z)m  wherein X, R and m are as defined for Formula I and each Z is independently iodine or bromine; (c) eliminating the halogen atoms represented by Z to form the perfluorovinyl compound represented by Formula I.
Patent KR-920002907-B1 (KR)
Inventor: CHWARTZMAN JOEL
IPC: A01G25/00
Filed: 1992-02-10
Granted: 1992-04-10
Abstract: 내용 없음.
Patent KR-100230034-B1 (KR)
Inventor: MASHI MILIANO BRAMBILLA
IPC: H02H3/08
Filed: 1992-04-09
Granted: 1999-11-15
Abstract: 공급라인(Vcc)과 구동장치(1)의 출력(T)사이의 단락을 검출하기 위한 회로는 장치의 출력터미널(T)에 유동성부하(L)가, 그리고 다른 터미널은 공급라인(Vcc)에 연결된 스위치(2), 부하(L)에 평행하게 연결가능한 2개의 전류재순환 브랜치(18, 20: 26), 및 스위치(2)를 개ㆍ폐시켜 부하(L)가 제1증가위상의 제1 예정값으로 상승하고 제1 재순환위상의 제2 예정값으로 낙하하며 그런다음 후속의 증가 및 재순환위상의 유지값정도로 진폭하는 전류로 공급되도록 하는 제어 유닛을 갖추고 있다. 이 검출회로는 각기 제1 재순환위상 및 후속의 재순환위상 중 각각 재순환브랜치(18, 20: 26)에 흐르는 전류를 검출하도록 설계된 2개의 전류센서(60, 61)를 포함한다. 이 전류센서들은 고장신호회로(73-85)에 연결되어 재순환위상중 재순환브랜치들에서의 전류의 부재시 고장신호를 발생하도록 하고 있다.
Patent KR-100244623-B1 (KR)
Inventor: OGATA SATOSHI
IPC: D04H1/541
Filed: 1992-07-24
Granted: 2000-03-02
Abstract: 본 발명은 (1)에틸렌-아크릴산 에스테르-말레산 무수물의 삼원공중합체[여기서, 당해 삼원공중합체는 금속에 대한 마찰력이 크고 정전기를 발생하기 쉽기 때문에 열등한 가방성으로 인하여 지금까지는 이러한 삼원공중합체로부터는 미세섬유가 수득되지 않았었다] 및 (2) 융점이 삼원공중합체의 융점보다 30℃ 이상 높은 열가소성 수지를 용융취입 공정에 따라 복합 방사시키고, 수득된 복합섬유를 특정한 방사 윤활제를 사용하지 않고 웹으로 형성시킨 다음, 당해 웹을 열처리시킴으로써, 수득된, 종이, 천, 목재, 금속 등에 대한 접착성이 높은 용융접착성 섬유시이트에 관한 것이다.
Patent KR-100225297-B1 (KR)
Inventor: KOUNO SHIGEYOSHI
IPC: B21D28/12
Filed: 1992-09-02
Granted: 1999-10-15
Abstract: 펀치 프레스는 지지부분(11U,11L)상에 회전가능하게 장착된 한쌍의 디스크형 공구홀더(15U,15L)와, 복수개의 펀치공구(17P)를 이송한 홀더(15U)의 하나와, 공작물(W)을 펀치하도록 펀치공구(17P)와 상호 작동한 복수개의 다이공구(17D)를 이송한 다른 홀더(15L)와, 수직으로 이동가능한 램(61)과, 한 쌍의 공구홀더에 부착된 원하는 펀치 및 다이공구가 한쌍의 공구홀더를 회전함에 따라 공구의 방향을 변화하기 위하여 색인된 위치로 이동가능하게 할 수 있으며, 램에 부착된 스트라이커(19)를 포함한다.
Patent KR-960005022-B1 (KR)
Inventor: NISHI YOSHIO
IPC: B66D3/14
Filed: 1992-09-19
Granted: 1996-04-18
Abstract: 내용 없음.
Patent KR-960006632-B1 (KR)
Inventor: SASAKI GORO
IPC: H04B10/69
Filed: 1992-10-02
Granted: 1996-05-22
Abstract: 내용 없음
Patent KR-950001175-B1 (KR)
Title: Improved data shift register
Inventor: JANG KYE-ON
IPC: H03K17/00
Filed: 1992-11-19
Granted: 1995-02-11
Abstract: The data shifter transfers the data next to registers with only single operation. The data shifter comprises; the first NAND gate unit inputting the first logic status output signal of the first and second stable status units; the first inverting unit converting the first NAND gate output; the first and second stable status unit inputting the first inverting unit output signal and input data; the second NAND gate unit inputting the second logic unit output signal and the first logic status of the second stable status unit; the second inverting unit inverting the second NAND gate unit output signal; the second stable status inputting the second logic status of the first and second stable status units.
Patent KR-100273681-B1 (KR)
Title: Method for forming capacitor of semiconductor device
Inventor: KIM IL-UK
IPC: H01L27/108
Filed: 1992-12-31
Granted: 2000-12-15
Abstract: PURPOSE: A method for forming a capacitor of a semiconductor device is provided to omit a storage node contact etching process by forming a bit line directly on a storage node contact. CONSTITUTION: A gate oxide layer and a gate electrode(1) are formed on a semiconductor substrate including a field oxide layer. An oxide layer is deposited on the gate electrode. The first oxide layer spacer(2) is formed on a sidewall of the gate electrode. The first storage node electrode(5) and the interlayer dielectric are deposited on the whole face of the substrate. The second oxide layer spacer(7) is formed on a stepped sidewall between the interlayer dielectric and the first storage node electrode(5). A bit line and a bit line oxide layer(9) are formed by burying a conductive material and an oxide layer into a contact hole. The third oxide layer spacer(10) is formed on a stepped sidewall between the bit line and the bit line oxide layer(9). A polysilicon layer for the second storage node electrode and an oxide layer(12) are deposited thereon. The second storage node electrode mask pattern is formed by a photoresist layer. The fourth oxide layer spacer(14) is formed by etching selectively the oxide layer(12). The fourth oxide layer spacer(14) is removed from the oxide layer(12) and a sidewall of the oxide layer(12).