baber/WOPTO huggingface dataset:
Patent JP-S62142247-A (JP)
Title: Temperature measuring instrument
Inventor: NAKATSUKA NOBUO
IPC: G01J5/08
Filed: 1985-12-16
Abstract: PURPOSE:To measure a temperature with high accuracy, in a position which is separated from a position for measuring a temperature, by constituting the titled device so that a temperature can be measured by utilizing the rotation of plane of polarization of a light beam and the reflection of the light beam, which are caused by a temperature variation. CONSTITUTION:A reflecting means 1 is provided on a position for measuring a temperature. The means 1 has three reflecting surfaces being vertical to each other, but on at least one reflecting surface among them, a sheet-shaped double refraction substance 2 is provided. This double refraction substance 2 has a quality for rotting the plane of polarization of a light beam passing through therein, by an angle which is correlated to a temperature. On the other hand, a light beam generating means 3 is provided on a position which is separated from a temperature measuring point, and a light beam which is condensed by a condensing lens 4 is irradiated to the means 1 through the first polarization plane maintaining optical fiber 5 and a collimator use lens 6. The light beam which is reflected by the means 1 is irradiated to a condensing lens 7, the maintaining optical fiber 8 and reaches a photoelectric converting means 9, and a temperature is measured, based on an electric signal from the means 9.
Patent JP-2001111093-A (JP)
Title: Photoelectric transfer element
Inventor: SUEMITSU TETSUYA
IPC: H01L31/10
Filed: 1999-10-05
Abstract: PROBLEM TO BE SOLVED: To provide an element that can efficiently change a drain current with a small amount of holes. SOLUTION: An element is formed of a multilayer structure of a compound semiconductor. For a semiconductor substrate 1 and a buffer layer 2, a material having a band gap energy which passes the incident light beam is selected and for a channel layer 3, a material working as the light-absorbing layer is selected. An n-type impurity is doped to a barrier layer 4, and thereby the carrier electrons flow into the drain electrode 6 from the source electrode 5. The gap between both electrodes has a structure such that the surface spinning region 7 where the surface Fermi level is near the valence band disables existence of electrons within the channel immediately under such region in the non-irradiation condition of the light beam. Regarding the relationship of the energy among the barrier layer 4, a channel layer 3, and a buffer layer 2, the conductive band of the channel layer 3 is sufficiently lower than the other two layers and thereby electrons may be accumulated easily, the valence band almost does not generate energy difference between the barrier layer 4 and channel layer 3 and he buffer layer 2 has the energy which is identical to that of other two layers or the energy sufficient lower than that of these layers.
Patent JP-H03146404-A (JP)
Title: Method and device for forming high-quality oxide superconducting thin film
Inventor: HARADA KEIZO
IPC: H01B12/06
Filed: 1989-10-31
Abstract: PURPOSE:To enhance the quality by automation by laminating the crystals of an oxide superconductor on a substrate in the order specified and forming the film of the crystals in an active oxygen atmosphere. CONSTITUTION:The chamber 1 of a molecular beam epitaxy device for forming an oxide superconducting thin film is evacuated to about 5X10<-6>Torr, and the substrate 5 of MgO, etc., set on a substrate holder 3 is heated to about 650 deg.C by a heater 4. The O2 excited by a microwave power source 7 is supplied in the vicinity of the substrate 5 from a gaseous reactant supply pipe 6. The Y, Ba, Cu, etc., as the vaporization source 10 in a K-cell 2 are heated and vaporized, a shutter 8 is then opened or closed, the temp., laminating order, frequency of lamination, etc., are controlled by a microcomputer 11, and the layer of one unit crystal is laminated on the substrate 5 one by one. The crystallinity, etc., are observed by an RHEED (electron beam diffraction) consisting of an electron gun 20, etc., to promote crystallization, the process is repeated, and an oxide superconducting thin film having about 100nm thickness is obtained.
Patent JP-S63137362-A (JP)
Title: 'kanji' data entry device
Inventor: NAKAJIMA SHUZO
IPC: G06F17/21
Filed: 1986-11-29
Abstract: PURPOSE:To reduce the load of an operator by adopting constitution capable of optionally selecting an input format for 'KANA' (Japanese syllabary)/'KANJI' (Chinese character) conversion. CONSTITUTION:A format program corresponding to a slip form is formed. At that time, a 'KANJI' conversion input mode is set up as one of definition characters. At the time of inputting a slip, the format program is selected and data are inputted through a keyboard 3. A definition character deciding part 4 decides the definition character to determine the kind of shifting and the number of digits in a field. When the field concerned is set up to a 'KANJI' conversion mode based on 'KANA' input, the control of the 'KANJI' conversion mode stored in a main memory 2 is set up to the conversion based on 'KANA' input, and when the field is in a mode based on 'ROMAJI' input, the control is set up to conversion based on 'ROMAJI' input.
Patent JP-H10113803-A (JP)
Title: Tool head device for precisely finishing work surface
Inventor: EYSEL DIETER
IPC: B23B29/00
Filed: 1997-09-30
Abstract: PROBLEM TO BE SOLVED: To precisely cut the surface of a work while a tool head or a work is rotated without hysteresis. SOLUTION: A tool head 10 for precisely cutting the surface of a rotating work 14 is provided a cutting tool 12. The cutting tool is structured to move against an restoring force from an initial position for the work 14 to an operating position by a driving body 37 consisting of a direct-acting type driving member 36 composed of an expansion rod which is operated to be elongated by magnetostrictive action, and an electromagnetic coil 32, and by a converting member 22 for converting a driving motion int an adjusting motion. In order to adjust the cutting tool 12 from the initial position to a machining position, the expansion rod 36 which is operated based on the magnetostriction principle is used as a driving member.
Patent JP-H03147144-A (JP)
Title: Diagnostic device for program for automatic transaction machine
Inventor: MATSUDA KYOKO
IPC: G07D9/00
Filed: 1989-11-02
Abstract: PURPOSE:To easily diagnose a program to be diagnosed without altering it while maintaining the state as it is by providing a pseudo input/output control part, which executes an operation equivalent with an input/output control part, between first and second computers. CONSTITUTION:Between first and second computers 20 and 22, a pseudo input/ output control part 25 is provided to execute the operation equivalent with the input/output control part. As a result, the program to be diagnosed executes an operation similar to be loaded to a real automatic transaction machine on the first computer 20, and the input/output signal is also exchanged completely without being different from the real automatic transaction machine. In such a state, when the second computer 22 generates the output signal in the completely same form as a real input/output device, the program to be diagnosed executes the operation corresponding to the output signal. Thus, when the input/output signal to be generated in various abnormal states is generated in the second computer 22, the operation of the program to be diagnosed to the various abnormal states can be continuously diagnosed at high speed.
Patent JP-S63137412-A (JP)
Title: Manufacture of semiconductor substrate
Inventor: ENOMOTO SHUJI
IPC: H01L21/265
Filed: 1986-11-29
Abstract: PURPOSE:To make the crystalline property of an Si single crystal thin film excellent and to implement low defect density as a result of it, by forming an amorphous film from a first Si single crystal thin film layer by an ion implantation method, and performing a solid growing step twice at a high temperature. CONSTITUTION:An oxide single crystal thin film 2 is formed on an Si single crystal substrate 1. Then the substrate 1 is oxidized at high temperature, and a thermal oxide film 3 is formed between the substrate 1 and the film 2. Then an Si single crystal thin film 5 is formed on the film 3 by a vapor growth method. Si ions are implanted in the film 5. An amorphous Si layer 7 is formed in the vicinity of the interface between the film 2 and the film 5. Then solid growth is performed at high temperature, and the layer 7 is transformed into an Si single crystal thin film 51 having excellent low-defect density. Then Si ions are implanted into the film 51, and the amorphous Si layer 8 is formed in the vicinity of the surface of the film 51. Thereafter high temperature heat treatment is performed, and an Si single crystal thin film 52 having an excellent crystal structure is formed. When an Si single crystal thin film is formed by a homogeneous epitaxial gowing method with the film 52 as a seed crystal, a semiconductor substrate having an Si single crystal film 6 characterized by excellent crystalline property is obtained.
Patent JP-S63137320-A (JP)
Title: Position detector
Inventor: KUBO HIROAKI
IPC: G06F3/042
Filed: 1986-11-28
Abstract: PURPOSE:To accurately detect an optional point by comparing plural current values outputted by light radiating an optional point of an amorphous semiconductor layer. CONSTITUTION:The titled device is constituted of a pin-junction amorphous semiconductor layer 3, 1st and 2nd layers 2, 4 for holding both the faces of the layer 3 and 1st-4th terminals 21, 22, 41, 42 for separating and leading out current in the X and Y directions. When light radiates to an optional point O of the layer 3 by a light radiating input means 5 such as a light pen, short current is allowed to flow between the 1st and 2nd conductive layers 2, 4 on the layer 3. At that time, the coordinates in the X and Y directions can be obtained by calculating the current ratio of the current between the 1st and 2nd output terminals to that between the 3rd and 4th output terminals. A reflection resisting rear face protecting layer, e.g. a component obtained by adding black pigment to epoxy resin or the like, is stuck to the back face of the light radiation side of the layer 3 to fix a reflection factor and improve accuracy.
Patent JP-H11115046-A (JP)
Title: Method and apparatus for manufacturing film
Inventor: NIIMOTO MINEO
IPC: B29L7/00
Filed: 1997-10-17
Abstract: PROBLEM TO BE SOLVED: To align both ends of a film flattened after inflation molding, and allow it to be wound up on a winding up roller by permitting a film passed through a plurality of deflection rollers to pass through predetermined positions of delivery rollers in its both ends at all times. SOLUTION: A film F is wound in a roll-shaped manner by the winding roller 23 of a winding machine 22. A posture control device 30 is set at the deflection roller 19d situated at the lowermost stream side in the traveling direction of the flattened film F among respective deflection roller 19a, 19b, 19c, 19d. The posture control device 30 operates such that when the flattened film F passed through the 90 degree reverse rotating deflection roller 19d comes in contact with the outer circumferential surface of a delivery roller to be forwarded thereafter by being spaced away of the outer circumferential surface of the delivery guide rollers 20, it is delivered always passing through predetermined positions on the delivery guide rollers 20 in a manner that both the ends of the film does not move axially on the outer circumferential surface of the guide rollers 20.
Patent JP-H01128290-A (JP)
Title: Static type ram
Inventor: NAKAI NOBUAKI
IPC: G11C11/418
Filed: 1987-11-13
Abstract: PURPOSE:To reduce energy consumption by providing, in a serial form, a gate controlled by the address selecting line of an X system and a gate controlled by the address selecting line of a Y system as the transmitting gate MOSFET for address selection. CONSTITUTION:A memory array M-ARY of the title static type RAM is composed by matrix-arranging memory cells MC. At the cell MC, MOSFETs Q1 and Q2 in which the gate and a drain are mutually and orthogonally linked, and high resistances R1 and R2 connected between the drains of FEETs Q1 and Q2 and a power source terminal VCC are provided. Further, to realize the reduction of the energy consumption, between the common contact point of the FET Q1 and Q2 and a pair of complementary data lines D0 and the inverse of D0, transfer gate MOSFET Q3 and Q4 and transfer gate MOSFET Q5 and Q6 are provided in the serial form. The gate of the FET Q3 and Q4 is linked to the address selective line of the X system, and the gate of the FET Q5 and Q6 are linked to the address selective line of the Y system, and only a single memory cell is made into a selective condition.
Patent JP-H04161584-A (JP)
Title: Door and manufacture thereof
Inventor: KANEKO ISAO
IPC: E06B3/70
Filed: 1990-10-22
Abstract: PURPOSE:To manufacture a door easily and to make it possible to finish corners of both side edges beautifully by providing bending sections along corners of the width direction of the door to the surface members stuck on the fronts and rears of cores, and providing the butt ends to the front ends of the bending sections. CONSTITUTION:Surface members 30 and 30 are respectively stuck on the fronts and rears of cors 20-22 to form a door 10. Bending sections 31... bent in the direction of the inside and outside in the thickness of the door 10 along corners positioned to both ends widthwise of the door 10 are provided to the surface members 30. In addition, Butt ends 32... to butt at the approximate center in the direction of the thickness of the door 10 are provided to the front ends of the bending sections 31. Notch sections having a V-shaped section are formed to the insides of the bending sections 31 of the surface members 30 lengthwise of the door 10, and the butt ends 32 of the surface members 30 are folded inward from the notch sections. According to the constitution, end closures of both corners of the door 10 can be omitted.
Patent JP-H01127197-A (JP)
Title: Rotary press dehydrator
Inventor: KIHARA YASUHIKO
IPC: B30B9/20
Filed: 1987-11-13
Abstract: PURPOSE:To perform continuous hydration or concentration of sludge by composing a dehydrator of an external cylinder having numerous pores, an internal cylinder rotating as tops on the external side of a nearly triangular section are inscribed in the external cylinder and a rotating drive device to rotate the internal cylinder. CONSTITUTION:First, sludge is introduced from a duct 2 having a check valve 1 into the external cylinder 3 having numerous slits. The internal cylinder 5 is provided in contact with a rotating shaft 4 through a gear on the inside of the internal cylinder 5 so that the internal cylinder 5 is rotated by the rotating shaft 4 nearly in the center of the external cylinder 3. The space parted in a state filled with liquid by points in contact with the inside of the external cylinder 3 in the internal cylinder 5 decreases in volume gradually with the revolution of the internal cylinder 5, the contents are pressurized and water is exhausted from slits or the pores 9 provided on the external cylinder 3 to the outside of the external cylinder 3. Cakes 7 which have reached the exhaust port 6 (cake or concentrated liquid) are scraped by a scraper 8. This device can continuously perform introduction of original sludge - dehydration by pressurizing - exhaust of solid matter.
Patent JP-H07139323-A (JP)
Title: Relief valve device for forcible transportation oil path for engine
Inventor: HATAURA KIYOSHI
IPC: F16K17/04
Filed: 1993-11-16
Abstract: PURPOSE:To eliminate chattering of a ball valve body in pressure governing operation and eliminate abnormal abrasion of a valve seat face and the ball valve body due to collision during closed valve seating of the ball valve body. CONSTITUTION:An arc guide wall 7 for advance/retreat guiding a ball valve body 4 and an oil port 10 are formed extending over an advance/retreat movement range of the ball valve body 4 in the outlet communication chamber part 6b of a relief valve chamber and the guide wall 7 having the same diameter arc as the inside diameter of the valve chamber part 6a of the relief valve chamber is so constituted that the ball valve body 4 is guided to be closely fitted thereto so as to be advanced/ retreated from the valve chamber part 6a to the outlet communication chamber part 6b. A relief spring 5 is composed of a valve body side part 5a and a base end side part 5b. The valve body side part 5a and the base end side part 5b are linked with each other until the pressure reaches an open valve starting pressure P1 so as to form a compression spring of small spring onstant and in the case of the pressure exceeding the open starting pressure P1, contraction of either of the valve body side part 5a or the base end side part 5b is regulated so as to form a compression spring of a large spring constant.
Patent JP-H01128513-A (JP)
Title: Manufacture of semiconductor substrate
Inventor: UCHIYAMA MAKOTO
IPC: H01L29/78
Filed: 1987-11-13
Abstract: PURPOSE:To cheaply allow mass production of semiconductor substrates of single-crystal-polycrystal-single-crystal structure with good quality by specularly polishing each joining face of two single crystal semiconductor substrates respectively, forming an amorphous semiconductor film at a joining face, tightly joining a joining face, performing heat treatment and joining to recrystallize the amorphous semiconductor film. CONSTITUTION:Amorphous silicon films 23, 24 of approximately 1000Angstrom  thick are deposited on mirrors 21, 22 of two silicon wafers, these amorphous silicon film faces or an amorphous silicon film face and a specularly polished single- crystal silicon face have association and are tightly joined through large structural liquid, for example, a thin film of methanol. Two wafers joined by dropping methanol are set on a heater heated at about 50 deg.C and firmly joined after more than several hours passes. When the firmly joined wafer is treated for 30 minutes at about 100 deg.C in air, for 7 hours at 560 deg.C, for 5 hours at 580 deg.C, for 5 hours at 600 deg.C and for 5 hours at 1000 deg.C in N2 gas atmosphere, the amorphous silicon film is recrystallized into polysilicon 25.
Patent JP-H05102040-A (JP)
Title: Film formation method
Inventor: HORIIKE YASUHIRO
IPC: H01L21/205
Filed: 1991-10-07
Abstract: PURPOSE:To form a dense film of high insulativeness by making a treatment of irradiating a film with remaining organic substances with hydrogen atoms to remove the organic substances. CONSTITUTION:A sillicon semiconductor wafer 1 is overlaid with a conductive layer 2 made of aluminum to form a trench-structure surface. This trench structure is surfaced with a uniform silicon film by CVD using a material gas containing an organic silane gas. A mixture gas (TES/H) of TES and hydrogen atoms (H) is used as the material gas. A silicon film 4 is deposited by reaction of the material gas in the the trench-structure surface. However, this silicon film 4 has takeup of organic substances contained in the TES. Therefore, next this silicon film 4 is irradiated under a room temperature with hydrogen atoms developed by microwave discharge or the like, so that a treatment is made to remove organic substances in the silicon film 4. This process enables removal of organic substances in the film.
Patent JP-H06117234-A (JP)
Title: Secondary air pump control device of engine
Inventor: ISHIHARA TAKAHISA
IPC: F02D11/02
Filed: 1992-09-30
Abstract: PURPOSE:To surely prevent the condensed water from being stored in an air pump when the engine stop is judged by providing an electric-driven air pump to be mounted to supply air to the exhaust system. CONSTITUTION:An air passage 31 is interposed between an exhaust gas passage 28 and a suction passage 21 of a cycle engine, the end part on the exhaust gas passage 28 side is connected to the upstream of a three dimensional catalyst 30, and at the same time, the other end is connected to the upstream of a throttle valve 25 of the suction passage 21. A non-return valve 32, an air control valve 33 and an electric-driven air pump 34 are interposed in this air passage 31, and the air pump 34 is drive-controlled by opening/closing an electromagnetic switch 36. That means, the air pump is usually actuated in the specified engine condition by means of a control unit U, and the unburnt gas is re-combusted thereby. On the other hand, when the engine stop is judged, the engine is operated for the specified time period, and this prevents the water content in the exhaust gas from being stored in the air pump 34 as the condensed water.
Patent JP-2000108037-A (JP)
Title: Powder and grain collecting device
Inventor: SHINOHARA YASUO
IPC: B24C9/00
Filed: 1998-10-07
Abstract: PROBLEM TO BE SOLVED: To prevent a filter within a separating machine from clogging, efficiently collect powder and grain with small installation space and to repeatingly utilize powder and grain by providing a powder and grain supplying unit collecting powder and grain separated by a cyclone separator and supplying powder and grain to a nozzle within a working chamber and the cyclone separator at this front stage. SOLUTION: Powder and grain which is injected to a work 20 and performs working is discharged from a lower part of a working chamber 17 together with air, powder and grain is led to a large-sized cyclone separator 24 through a circulating conduit 25, and air and powder and grain are separated. After separated air is returned to a separating machine 26 and powder and grain is further and completely removed by a filter, air is returned to the working chamber 17 through an air circulation pipe 28. Separated powder and grain falls within a dust bunker 47 and is led to foreign matter collecting device 55 through an exhaust channel 48 of a dust collecting machine 35.  Therefore, powder and grain from which foreign matter is removed is led to cyclone separators 33, 34 through a powder and grain supply pipe 32, powder and grain is completely separated from air, and powder and grain is returned to the inside of a powder and grain supply unit 15.
Patent JP-H11115357-A (JP)
Title: Resin composition for ic card and ic-card using the same
Inventor: ISHIMARU SHINICHI
IPC: B42D15/10
Filed: 1997-10-17
Abstract: PROBLEM TO BE SOLVED: To improve durability of an IC card by incorporating specific pts.wt. of a mercapto-based tin stabilizer and an antistatic agent in a vinyl chloride resin. SOLUTION: As a vinyl chloride resin, it is not particularly limited. But, since a vinyl chloride-vinyl acetate copolymer deteriorates its chemical resistance, a cyanoacrylate-based adhesive is drapable with a surface of the card and related to an improvement in an adhesive strength of an IC module. A mercapto tin stabilizer as the stabilizer of the vinyl chloride resin is a sulfide or the like having an Sn-S bond. Its blending amount is a range of 0.5 to 5 pts.wt. to 100 pts.wt. of the vinyl chloride resin. If it is less than 0.5 pt.wt., a calendering becomes difficult. Meanwhile, if it exceeds 5 pts.wt., adhesive properties are lowered. And, as an antistatic agent, a cationic, anionic or nonionic agent can be used. Similarly, its blending amount is a range of 0.3 to 10 pts.wt. to the vinyl chloride resin.  Even if it is less than 0.3 pt.wt. or exceeds 10 pts.wt., an improvement in its strength or the like cannot be expected.