baber/WOPTO huggingface dataset:
Patent TW-483258-B (TW)
Title: Phase interpolating circuit and the apparatus composed of phase interpolating circuits for generating phase interpolating signal
Inventor: HUANG CHEN-CHIH
IPC: H03K5/13
Filed: 2001-02-22
Granted: 2002-04-11
Abstract: The present invention relates to a kind of phase interpolating circuit and the apparatus, which is composed of the phase interpolating circuits, for generating phase interpolating signal. The phase interpolating circuit is capable of effectively avoiding short circuit current and interpolating new intermediate phase signal at the upper and lower edges of the clock. The apparatus composed of the phase interpolating circuits for generating phase interpolating signal can generate multiphase clock signal that has pretty linear phase distribution and maintains excellent 50% duty cycle.
Patent TW-495559-B (TW)
Title: Coated steel material having corrosion resistance and improved workability and a method for producing the same
Inventor: NISHIDA SEIKI
IPC: C23C2/06
Filed: 2001-03-01
Granted: 2002-07-21
Abstract: This invention relates to coated steel materials having corrosion resistance and improved workability used for structures, bank protection works, fishing nets, fences which are exposed outdoors, and a method for producing the coated steel materials. The present inventive coated steel materials having a coating layer comprising; in terms of wt%, Al: 4 to 20%, Mg: 0.8 to 5%, Fe: less than 2%, and the remainder Zn and unavoidable impurities, and having an alloying layer comprising Fe-Zn-Al-Mg of a thickness of less than 20 μm between the coating layer and the base steel. Furthermore, the present inventive coated steel materials having a coating layer comprising; in terms of wt%, Al: 4 to 20%, Mg: 0.8 to 5%, Si: 0.01 to 2%, Fe: less than 2%, and the remainder Zn and unavoidable impurities, and containing dispersed Mg2Si in the coating layer, and having an inner alloying layer comprising Fe-Zn-Al-Mg-Si of a thickness of less than 5 μm and an outer alloying layer comprising Fe-Zn-Al-Mg-Si of a thickness of less than 30 μm between the coating layer and the base steel. The above coating layer optionally contains one or more elements selected from the group consisting of a, b, c, d. a: one or more of Ti, Li, Be, Na, K, Ca, Cu, La, Hf in an amount of 0.01 to 1.0%; b: one or more of Mo, W, Nb, Ta in an amount of 0.01 to 0.2%; c: one or more of Pb, Bi in an amount of 0.01 to 0.2%; d: one or more of Sr, V, Cr, Mn, Sn in an amount of 0.01 to 0.5%.
Patent TW-518330-B (TW)
Title: Depolymerization of polyterahydrofurans derivatives
Inventor: LIN WEN-FA
IPC: C07D307/38
Filed: 2001-07-11
Granted: 2003-01-21
Abstract: The invention discloses a method for depolymerization of a mixture containing polytetrahydrofuran derivatives, including heating the mixture comprising polytetrahydrofuran derivatives at 100-250 DEG C in the presence of a β-zeolite catalyst to obtain tetrahydrofurans, whereby the tetrahydrofuran monomers can be recovered from the waste materials in the preparation of polytetramethylene ether glycols.
Patent TW-502340-B (TW)
Title: Fet whose source electrode overhangs gate electrode and its manufacture method
Inventor: HAEMATSU HITOSHI
IPC: H01L21/338
Filed: 2001-07-17
Granted: 2002-09-11
Abstract: A gate electrode is in Schottky contact with the surface of a semiconductor substrate and extends in a first direction. A drain electrode is disposed on one side of the gate electrode, spaced apart from the gate electrode by some distance, and is in ohmic contact with the semiconductor substrate. A source electrode is constituted of a main part, an overhanging part and a shielding part. The main part is in ohmic contact with the semiconductor substrate in the region across the gate electrode from the drain electrode. The shielding part is disposed between the gate electrode and the drain electrode and extends in the first direction. The overhanging part passes over the gate electrode and connects the shielding part with main part. The size of the overhanging part along the first direction is smaller than the side of the shielding part. It becomes possible to sufficiently shield the gate electrode from the drain electrode while suppressing an increase of the parasitic capacitance between the source and gate electrodes.
Patent TW-517161-B (TW)
Title: Voltage peak detector
Inventor: SHIAU MING-CHUEN
IPC: G01R19/04
Filed: 2001-08-08
Granted: 2003-01-11
Abstract: The present invention proposes a kind of voltage peak detector that is composed of a differential amplifier, a current mirror and a capacitor. Both input terminals of the differential amplifier receive input voltage signal and output voltage feedback signal of the detector, respectively, and provide appropriate charging current for the current mirror to obtain peak value of the input voltage waveform for use as the output voltage signal. The differential amplifier is used as a comparator and the current mirror is used as a charger. The voltage peak detector proposed by the invention has not only new and simple circuit scheme, but also can precisely detect the peak value of the input voltage waveform.
Patent TW-493220-B (TW)
Title: Method for improving adhesion between carbon doped oxide layer and thin film layer
Inventor: LIN SEN-HONG
IPC: H01L21/205
Filed: 2001-08-30
Granted: 2002-07-01
Abstract: This invention provides a method for improving the adhesion between carbon doped oxide layer and thin film layer, which employs plasma treatment on the carbon doped oxide layer and then deposits the thin film layer.
Patent TW-I249747-B (TW)
Title: Method of enhancement of electrical conductivity for conductive polymer by use of field effect control
Inventor: WANG TZUNG-SHIUNG
IPC: H01B1/04
Filed: 2001-10-04
Granted: 2006-02-21
Abstract: The present invention is to provide a method of enhancement of electrical conductivity for conductive polymer by use of field effect control, wherein on the substrate, whose surface was treated with a field, was coated by a containing monomer or oligomer solution of conductive polymer, through a field mechanism a monomer or oligomer of conductive polymer can demonstrate the sequential order molecular structure layer on the substrate, on this molecular structure layer was coated by an available amount of oxidant to proceed the polymerization, it was subjected to a field during polymerization to form 3-dimensional order stacking structure in order to increase the functional characteristic and electrical conductivity for conductive polymer.
Patent TW-I246164-B (TW)
Title: Manufacturing method for capacitor of DRAM
Inventor: LIAO WEN-SHIANG
IPC: H01L21/8242
Filed: 2001-11-01
Granted: 2005-12-21
Abstract: The present invention provides a manufacturing method for capacitor of DRAM, which includes the following steps: forming a wordline conductive structure on a substrate; forming a first dielectric on the structure, and forming a landing pad electrically connected to the substrate; sequentially forming the bitline conductive structure and a second dielectric on the first dielectric; next, forming a plug electrically connected to the landing pad in the second dielectric, in which the forming method employs the high density plasma chemical vapor deposition method, the plasma enhanced chemical vapor deposition method, or the low pressure chemical vapor deposition method; then, forming a sacrificial layer on the second dielectric, which is made of SOG, BPSG, or porous SiO2; and, patterning the sacrificial layer to form an opening exposing the plug; forming the cylindrical conductive layer in the opening as the lower electrode of the capacitor; then, removing the sacrificial layer; and, sequentially forming the capacitive dielectric and the conductive layer on the cylindrical conductive layer.
Patent TW-593228-B (TW)
Title: Production of alkyl 6-aminocaproate
Inventor: BUNEL EMILIO E
IPC: C07B61/00
Filed: 2001-11-14
Granted: 2004-06-21
Abstract: A process for making alkyl 6-aminocaproate by hydroformylating 3-pentenenitrile to produce 3-, 4-, and 5-formylvaleronitrile (FVN mixture), converting the FVN mixture to alkyl 3-, 4-, and 5-cyanovalerate by either oxidative esterification of the FVN mixture or oxidation of the FVN mixture followed by esterification; isolating alkyl 5-cyanovalerate; and hydrogenating the alkyl 5-cyanovalerate to produce alkyl 6-aminocaproate. The resulting alkyl 6-aminocaproate can be cyclized to produce caprolactam.
Patent TW-506083-B (TW)
Title: Method of using nano-tube to increase semiconductor device capacitance
Inventor: LI JIUN-DAU
IPC: H01L21/02
Filed: 2001-11-28
Granted: 2002-10-11
Abstract: A method for using nano-tube to increase semiconductor device capacitance is provided, which is suitable for use in a substrate, and includes the following steps: defining a catalyzer region on the substrate surface; forming a nano-tube on the catalyzer region; forming a first dielectric layer on the nano-tube and the substrate surface; and forming an electrode layer on the first dielectric layer surface. By using the method stated above, it is capable of simply using the side-surface of the nano-tube cylinder to increase the capacitor electrode area for reaching the effect of greatly increasing the capacitance value without the need of increasing the bottom area occupied by the capacitor. In addition, the manufacturing method of the invented method is simple such that it is capable of greatly decreasing the production cost.
Patent TW-546523-B (TW)
Title: Liquid crystal display device
Inventor: SHIN JE-HUNG
IPC: G02F1/1335
Filed: 2001-12-04
Granted: 2003-08-11
Abstract: A liquid crystal display device includes a first substrate, a second substrate and a liquid crystal layer arranged the first and second substrates, wherein a color filter is arranged on the second substrate and a light scattered flat layer is arranged on the color filter. The light scattered flat layer is composed of a continuous phase and a scattered phase. The refractive index of the scattered phase is different from that of the continuous phase by at least 0.02. The light scattered flat layer has a function of scattering light to increase the brightness of the LCD, and also possesses an effect of flattening the color filter.
Patent TW-529178-B (TW)
Title: Charge pump device
Inventor: MYONO TAKAO
IPC: H02M3/07
Filed: 2001-12-25
Granted: 2003-04-21
Abstract: A charge pump device with a large current output is disclosed in the present invention, and particularly, the invention is capable of preventing the occurrence of latch up. P-type well regions 31, 32 are respectively formed inside N-type well regions 21, 22, in which N-type well regions 21, 22 are separated from each other. After that, MOS transistors M2, M3 for charge transfer are respectively formed inside P-type well regions 31, 32. Thus, there is no formation of parasitic thyristor to induce latch up.
Patent TW-531857-B (TW)
Title: Upward chip-cavity packaging process
Inventor: JENG JAU-CHIN
IPC: H01L23/053
Filed: 2001-12-31
Granted: 2003-05-11
Abstract: A kind of upward chip-cavity packaging process is disclosed in the present invention, wherein the substrate manufacturing process and packaging process are performed at the same time. By forming patterned dielectric layer to expose bonding pads of the chip and using electroplating method to form the connection between the bonding pads of the chip and the substrate, it is capable of obtaining excellent connection characteristic between the chip and the substrate so as to assure the connection reliability between the chip and the substrate. In addition, the problem of forming bubbles in the patterned dielectric layer can be avoided.
Patent TW-529091-B (TW)
Title: A slot via filled dual damascene structure without middle stop layer and method for making the same
Inventor: WANG FEI
IPC: H01L23/522
Filed: 2002-01-18
Granted: 2003-04-21
Abstract: An interconnect structure and method of forming the same in which a diffusion barrier/etch stop layer (22) is deposited over a conductive layer (20). An organic low k dielectric material (24) is deposited over the diffusion barrier/etch stop layer (22) to form a first dielectric layer (24). The first dielectric layer (24) is etched to form a slot via (50) in the first dielectric layer (24). An inorganic low k dielectric material (30) is deposited within the slot via (50) and over the first dielectric layer (24) to form a second dielectric layer (30) over the slot via (50) and the first dielectric layer (24). The re-filled via (50) is simultaneously etched with the second dielectric layer (30) in which a trench (38) is formed. The trench (38) extends in a direction that is normal to the length of the slot via (50). The entire width of the trench (38) is directly over the via (36). The re-opened via and the trench (38) are filled with a conductive material (40). In other embodiment, the first dielectric layer 24 comprises an inorganic low k dielectric layer and the second dielectric layer 30 comprises an organic low k dielectric layer.
Patent TW-548419-B (TW)
Title: Circuit structure of integrated graphing function chip and its test method
Inventor: LIN JING-SHIANG
IPC: G01R31/3187
Filed: 2002-02-01
Granted: 2003-08-21
Abstract: The present invention is related to an integrated graphing function chip, and particularly to a circuit structure of integrated graphing function chip and its test method. In the invention, a test circuit, which is capable of making the graph controller directly conduct with each bus in a test mode through the test circuit, is disposed in the main control module of the integrated chip. Because it is not required to use each corresponding controller in the main control module, the test is not influenced by the change of the main module. In addition, the test command is transmitted to the graph controller through the use of plural-frequency-multiplication mode so as to decrease the pin number required by the transmission. Moreover, through the use of multiplexer and the technique of multiple data transmission speed at the memory terminal, the pin number required during the test can be further reduced.
Patent TW-538190-B (TW)
Title: Door opening/closing device
Inventor: SON JAE-IK
IPC: E05C19/04
Filed: 2002-02-08
Granted: 2003-06-21
Abstract: The present invention relates to a door opening/closing device installed in a door of a building to be opened/closed about a hinge fixed at one side of the door. The opening/closing device controls the door to be manually opened and closed with an automatic returning device. When the door is opened by a rotating power adjusting device of the door, an oil pusher-plate in a rotary member pushes oil in an oil reservoir so that rotation speed of oil is adjusted by the pressure of oil passing through an oil passage hole, the end of the oil pusher plate and the inside wall of the oil reservoir. The door is opened in a joggling manner but slowly closed as rotating speed of the door gradually decreases, thereby solving problems such as injury occurring at the lime of closing the door. A door fixing unit securely fixes the door when the door is closed or opened so as to prevent a gap between the door and a door frame when the door is closed and securely fix the door without movement when the door is opened.
Patent TW-I229322-B (TW)
Title: Method and apparatus for editing data streams
Inventor: OOMEN ARNOLDUS WERNER JOHANNES
IPC: G11B27/031
Filed: 2002-04-17
Granted: 2005-03-11
Abstract: MP3 decoders decode MP3 data streams that comprise headers and signal data interspersed with each other, each header specifying a distance to a subsequent header, each header corresponding to a frame of signal data, the header being associated with a pointer that points to a starting point of the signal data for that frame relative to the header. An editing system cuts tracks from existing data streams. During editing, a user signals a header corresponding to the start of the desired track. The track is from the data stream, including a part of the data stream pointed at by the header and preceding the specified header. A new MP3 compatible data stream is written to a medium. The new data stream contains said header as first valid header and said part of the data stream preceding the header.
Patent TW-I246538-B (TW)
Title: A high strength stainless steel wire and a method for producing thereof
Inventor: TAKANO KOJI
IPC: C22C38/00
Filed: 2002-05-08
Granted: 2006-01-01
Abstract: The present invention provides a high strength stainless steel wire having an enhanced elongation, ductility and modules of rigidity obtained by limiting basic components, oxygen and sulphur thereof and by using toughening effects of ausforming through a grain size fining or a cold wire elongation work, and a method for producing thereof. The steel wire comprises; in mass, 0.03-0.14% of C, 0.1-4.0% of Si, 0.1-5.0% of Mn, 5.0-9.0% of Ni, 14.0-19.0% of Cr, 0.005-0.20% of N, 0.001-0.01% of O, 0.0001-0.012% of S and the balance being Fe and unavoidable impurities, and satisfies 0.17-0.32% of 2C+N, 20-24 of Ni equivalent (%) of expression (1) described below and not exceeding 4 ppm of H. Ni equivalent (%)=Ni+0.65Cr+0.98Mo+1.06Mn+0.35Si+12.6(C+N) ... (1).
Patent TW-588092-B (TW)
Title: Surface-treated organic pigments
Inventor: BUGNON PHILIPPE
IPC: C09B67/08
Filed: 2002-05-17
Granted: 2004-05-21
Abstract: The present invention relates to surface-treated pigments of formula (I), wherein Ar1 and Ar2 are each independently of the other a phenyl or naphthalene group, n1 and n2 denote a value from 0 to 0.15, the sum of n1 and n2 being a value from 0.01 to 0.15, n is an integer 1 or 2, X1 is a branched or unbranched alkyl radical or alkenyl radical having from 1 to 25 carbon atoms, it being possible for the alkyl radical to be interrupted by one or more S or O atoms, and is preferably a group -Y-(CH2)m-R1, wherein Y is a group -CH2-, -O-, -S-, -C(O)O-, -C(O)-, -C(O)-NH-, -SO2NH- or -SO2- and R1 is a hydrogen atom or a group -NR2R3, wherein R2 and R3 are each independently of the other a hydrogen atom or a C1-6 alkyl radical, and m is an integer from 1 to 24, especially from 12 to 18, X2 is a group -COOH, -SO3H or -P(O)OX3OX4, wherein X3 and X4 are each independently of the other a hydrogen atom or a C1-6 alkyl radical, especially a hydrogen atom, and pigment denotes an organic pigment or a mixture of organic pigments, including solid solutions and crystalline solid solutions. Compared with untreated pigments, the surface-treated pigments exhibit better rheological properties and/or no warping in the pigmenting of partially crystalline plastics.
Patent TW-548791-B (TW)
Title: Salicide process forming silicide of two different thicknesses concurrently
Inventor: WANG MEI-YUN
IPC: H01L21/768
Filed: 2002-06-14
Granted: 2003-08-21
Abstract: This invention provides a method of forming a thicker salicide on NMOS and a thinner salicide on PMOS through dopant implantation to improve the sheet resistance and problems of junction leakage distribution having diffused tail and being rather high so as to increase the process yield and chip performance.
Patent TW-566000-B (TW)
Title: Symmetric current logic gate
Inventor: CHOU MING-CHUNG
IPC: H03K19/086
Filed: 2002-09-13
Granted: 2003-12-11
Abstract: The present invention relates to a current logic gate, which is a kind of symmetric input loading current mode logic (CML) gate with the same input level. This method adopts one-level logic gate for avoiding the limitation produced by the difference between input loading and level, then it can improve the glitch from current steering.
Patent TW-I281361-B (TW)
Title: Organic electro-luminescent device with protecting layer
Inventor: CHIANG WHE-YI
IPC: H05B33/14
Filed: 2002-09-30
Granted: 2007-05-11
Abstract: This invention discloses a new structure of the organic electro-luminescent (OEL) devices. The structure of the organic electro-luminescent (OEL) devices in this invention comprises: a substrate; an organic luminous device, wherein the organic luminous device is connected with a surface of the substrate, and the organic luminous device comprises a first electrode that is connected with the surface of the substrate, organic layers that are connected with the first electrode, a second electrode that is connected with the organic layers; an organic dielectric layer that is overlaid on the second electrode and a reactive protecting layer that is overlaid on the organic dielectric layer; a tub-seal cover that consists of a bottom cover and an edge, so as to contain the organic electro-luminescent (OEL) device therein; an adhesive that is located on the edge of the cover, and the edge of the cover is adhered to the predetermined region on the surface of the substrate, thereby the organic electro-luminescent (OEL) device is sealed therein.
Patent TW-I253353-B (TW)
Title: Fire escape device
Inventor: LIOU JIA-JAU
IPC: B66B1/30
Filed: 2002-10-09
Granted: 2006-04-21
Abstract: This invention relates to a fire escape device, which is installed on an external wall of a building and is provided with a hollow surrounding body. A set of transmission belt is installed inside the surrounding body and is coupled to and driven upper and lower pulleys driven by a power set. Bearing boards are spaced at intervals on the transmission belt. When the bearing board gets across each floor, it allows users to enter the bearing board and transport them to the ground. The present invention provides an escape device which serves to safely and effectively evacuate people of each floor to the ground when a fire happens to a multi-storey building.
Patent TW-586218-B (TW)
Title: Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
Inventor: PENG JACK ZEZHONG
IPC: H01L27/10
Filed: 2002-10-16
Granted: 2004-05-01
Abstract: A reprogrammable non-volatile memory array and constituent memory cells is disclosed. The semiconductor memory cells each have a data storage element constructed around an ultra-thin dielectric, such as a gate oxide. The gate oxide is used to store information by stressing the ultra-thin dielectric into breakdown (soft or hard breakdown) to set the leakage current level of the memory cell. The memory cell is read by sensing the current drawn by the cell. A suitable ultra-thin dielectric is high quality gate oxide of about 50 Å thickness or less, as commonly available from presently available advanced CMOS logic processes. The memory cells are first programmed by stressing the gate oxide until soft breakdown occurs. The memory cells are then subsequently reprogrammed by increasing the breakdown of the gate oxide.
Patent TW-571605-B (TW)
Title: Method of manufacturing copper foil with insulating layer, copper foil with insulating layer obtained with the same method, and printed circuit board
Inventor: SATO TETSURO
IPC: H05K3/38
Filed: 2002-11-18
Granted: 2004-01-11
Abstract: To provide a method of manufacturing a material which can make a skeletal component as thin as possible to be contained in an insulating layer in a manufactured copper clad laminate and can securely prevent the direct contact between the nodular treatment surface of the attached copper foil and a skeletal component. In order to attain the object, here is adopted ""a method of manufacturing a copper foil with an insulating layer 1 which method is a method of manufacturing a copper foil provided with a semi-cured insulating resin layer containing a skeletal component on one side surface of the copper foil, and is characterized in that: a first thermosetting resin layer 3 in an uncured or semi-cured state is provided on one side surface of a copper foil 2; a nonwoven fabric 5 or a woven cloth 5 to be a skeletal component is press-bonded onto a first thermosetting resin layer 3; a second thermosetting resin layer 7 is formed on a surface of a press-bonded nonwoven fabric 5 or woven cloth 5; and a semi-cured insulating layer containing the nonwoven fabric 5 or the woven cloth 5 is formed on one side surface of the copper foil 2 by drying into a semi-cured state.""