baber/WOPTO huggingface dataset:
Patent JP-H10110164-A (JP)
Title: Fluorescent material
Inventor: YAZAWA TOMOYA
IPC: H05B33/14
Filed: 1996-10-09
Abstract: PROBLEM TO BE SOLVED: To obtain a fluorescent material easy in the maintenance of concentration and good in luminous characteristics. SOLUTION: This electrominescent element is produced by forming a hole transport layer 4 comprising a TPD (N,N-diphenyl-N,N'-bis-(3-methylphneyl-[1,1'- biphenyl]-4,4'-diamine) on an anode 3 comprising indium tin oxide, forming an electron transport layer 5 produced by introducing a quionacrioone derivative into tris(8-quinolato) aluminum complex on the formed hole transport layer 4, and subsequently forming a cathode 6 on the layer 5. The quinacridone derivative is 4,11-diethylquinacridone in which the 4 and 11-hydrogen atom of the quinacridone molecule are substituted by the ethyl groups, and hardly forms a hydrogen bond between the molecules. Namely, the quinacridone derivative has such a structure as sterically hindering the hydrogen bond. When the quinacriodone derivative is introduced into the tris(8-quinolato) aluminum complex, the concentration can thus easily by maintained.  Since the ethyl groups are saturated hydrocarbon groups, the original luminous characteristics of the quibnacriodone are not deteriorated to hold the good luminous characteristics.
Patent JP-H07118826-A (JP)
Title: Ionitriding method of metallic member
Inventor: ISHII YOSHIRO
IPC: C23C8/38
Filed: 1993-10-20
Abstract: PURPOSE:To execute the ionitriding the surface of a metal in a short time with mild ionic impulse without sputtering the surface of the metal and changing the surface roughness by specifying the glow discharge condition of the ionitriding. CONSTITUTION:In the ionitriding of a metallic member by keeping the temp. of the metallic member at 300-600 deg.C and glow-discharging to the surface of the metallic member at 0.001-2.0mA/cm<2> current density with gaseous ammonia and gaseous hydrogen, the ionitriding is executed in a plasma state that the ratio of luminous intensity of NH radical/nitrogen molecule ion (N2<+>) measured by emission spectrochemical analysis in the vicinity of the surface of the metallic member is >=1/10. As a result, ionitriding is uniformly executed on the surface of the metallic member without changing the surface roughness.
Patent JP-2000098470-A (JP)
Title: Camera
Inventor: IDO YUKINORI
IPC: G03B17/04
Filed: 1998-09-22
Abstract: PROBLEM TO BE SOLVED: To eliminate imperfection in operation and imperfection in protection by arranging the fulcrum of an opening/closing mechanism at a position where it can take a state where either surfaces of first and second body parts are opposed without leaving a space between them and a state where the other surfaces thereof are opposed without leaving a space between them. SOLUTION: The opening/closing mechanism is a mechanism for turning the first body part 12 around the fulcrum, and a mechanism for turning the second body part 13 around the fulcrum. In such a case, the positions of the first and the second body parts 12 and 13 are changed from a spread state and either surfaces 12a and 13a of both body parts 12 and 13 are not seen at all in any direction on the outside in the state where either surfaces 12a and 13a of both body parts 12 and 13 are opposed without leaving a space between them. The other surfaces 12b and 13b of the body parts 12 and 13 are not seen from the outside because they are opposed without leaving a space between them in a photographing state. The photographing state is equal to a second state.
Patent JP-S62145208-A (JP)
Title: Manufacture of waveguide diffraction grating
Inventor: KOGA KEISUKE
IPC: G02B6/12
Filed: 1985-12-19
Abstract: PURPOSE:To obtain the difference of side etching originating from a difference in adhesion and to form a diffraction grating which has a projection and recess pattern on the side wall of a waveguide by laminating two kinds of materials and masking them alternately to an InGaAsP layer. CONSTITUTION:The InGaAsP optical waveguide layer 2 is crystal-grown on an InP substrate 1 and an SiNx film 3 is formed to form a resist diffraction grating mask 4 corresponding to the period of a desired diffraction grating. The resist mask 4 is removed after a diffraction grating pattern is transferred to the SiNx film 3, a waveguide transfer mask 6 made of resist is laminated on a diffraction grating transfer mask 5, and the waveguide transfer mask 6 made of resist is dry-etched partially. An area which is not covered with the waveguide transfer mask 6 is all removed to obtain a final etching mask. The area which is covered with SiNx is hardly side-etched right under the mask and the area covered with the resist is etched gradually according to the side etching right under the mask, so steps are formed on the side wall of the waveguide to constitute the diffraction grating.
Patent JP-H02131680-A (JP)
Title: Picture processor
Inventor: TAKAGI TOSHIYUKI
IPC: H04N5/265
Filed: 1988-11-11
Abstract: PURPOSE:To move a picture synthesized without giving load to a picture generating circuit vertically on a monitor screen by providing a vertical synchronizing conversion circuit converting an external synchronizing signal based on an external control signal. CONSTITUTION:When a picture generated by a picture generating circuit 6 is moved continuously on the monitor screen, on external control signal S3 is inputted to a vertical synchronizing conversion circuit 5 and it is realized by selecting number of horizontal synchronizing signals included in one period of a vertical synchronizing signal to be (N+ or -m) lines as to the converted vertical synchronizing signal S9 based on the signal S3, where (m) is a positive integer and when the sign is positive, the generated picture is moved on the monitor screen by m-line each downward by horizontal operating lines for each pattern. If the sign is negative, the generated picture is moved upward. Furthermore, the moving speed is varied by varying the value (m).
Patent JP-H11107856-A (JP)
Title: Single stage and multistage expansion stirling engine expander and stirling cooler
Inventor: ISSHIKI NAOJI
IPC: F02G1/055
Filed: 1997-10-02
Abstract: PROBLEM TO BE SOLVED: To contrive an increment of specific power and nonpressure promotion by injecting saturated steam into an operating space of a cold side piston in the vicinity where all the operating space becomes minimized, and in the vicinity where the all operating space becomes maximized and at the process scheduled henceforth, emitting internal operating gas and steam from the operating space of the cold side piston. SOLUTION: An alpha type Stirling engine by V-shaped two cylinders is equipped with a hot cylinder 1, a cold cylinder 2, a hot side piston 3, a cold side piston 4, a regenerative heat exchanger 5, and an operating gas heater 6 respectively, and in this case, a steam filling port 12 is formed in the upper part of a cold side piston operating space 11. In addition, a lot of exhaust ports 13 and 14 are installed in a side face of the cold cylinder 2. Then, feedwater of a feed water tank 18 is fed to a process coil 21 and steam is generated, then this steam is fed to an injecting steam valve 28 by way of a steam separator 26. Furthermore, at an air suction injector 30, atmospheric air is inhaled and mixed by way of a check valve 32, and this air-fuel mixture is taken into the cold side piston operating space 11 from the steam filling port 12.
Patent JP-S62144367-A (JP)
Title: Junction type field-effect transistor
Inventor: FUJII TOSHIO
IPC: H01L29/808
Filed: 1985-12-19
Abstract: PURPOSE:To shorten the channel of a FET and increase the working speed of the FET by forming a junction at an inclination close to verticality (a vertical type FET) and controlling gate length by controlling the thickness of a growth layer. CONSTITUTION:An n<+>-GaAs layer 2 and a p<+>-GaAs layer 3 are grown in succession on an SI-GaAs substrate 1 by using an MBE method. Silicon is employed as an n-type dopant and beryllium as a p-type dopant. A groove 4 is formed through chemical etching employing a sulfuric acid group etchant through normal lithography. The groove 4 is coated by using the MBE method, and an n-GaAs layer 5 is grown. Electrode-forming regions in each layer are exposed and respective electrode is shaped, thus acquiring a FET having a short channel and operating at high speed.
Patent JP-H05208160-A (JP)
Title: Coating device
Inventor: RUDORUFU BAISUWANGAA
IPC: B05C11/04
Filed: 1992-10-23
Abstract: PURPOSE: To supply coating material flow satisfactorily evenly over the entire width of a material web or the entire width of the surface to be generally subjected to a coating treatment even when the distance between a coating material accepting chamber and the surface to be subjected to the coating treatment is relatively short. CONSTITUTION: A supply passage 18 is internally provided with obstructing strips 6 formed in parallel with a doctor element 5 in its longitudinal direction or is provided with a plurality of the obstructing strips 6 which have ribs and grooves alternately formed in the longitudinal direction of the doctor element 5 or are provided with a plurality of the projections corresponding to these ribs and are respectively alternately butted against each other or are provided with continuous are row strip having a series of hole. The cross-sectional area rate of the supply passage existing before and behind the obstructing strips 6 or the plural projections is reduced by at least 30%.
Patent JP-H11122091-A (JP)
Title: Semiconductor integrated circuit device
Inventor: IWASAKI TADASHI
IPC: H03K19/0175
Filed: 1997-10-20
Abstract: PROBLEM TO BE SOLVED: To prevent the deterioration of a drive current due to a pack gate effect generated at the time of high level output, in the case of constituting a circuit by connecting a depletion transistor between an output buffer circuit and an input/output pad, as to transfer the signals of a potential higher than an integrated circuit internal power supply voltage. SOLUTION: This device is provided with input/output pads provided in a semiconductor integrated circuit, the output buffer circuit for outputting signals inside the integrated circuit and a depletion type MOS transistor, connected between the input/output pad and the input/output buffer circuit and is designed, so as to turn the drive ability of the depletion type MOS transistor to a value equal to the drive ability of the output buffer circuit.
Patent JP-H01130022-A (JP)
Title: Rotation controller
Inventor: YOSHIOKA TORU
IPC: F02D41/22
Filed: 1987-11-13
Abstract: PURPOSE:To improve responsiveness by performing opening and closing control on the basis of position of opening and closing a throttle detected by a rotary encoder. CONSTITUTION:A rotary encoder 14 is provided coaxially with a shaft 13 of a motor 11 mounting a throttle 15 of a prime mover. Pulses generated from the rotary encoder 14 to represent the rotational displacement of the throttle 15 are counted by an up-down counter 18 so that said displacement is measured. A phase Z signal is generated from the rotary encoder 14 and when the counter 18 is reset, the position of opening and closing the throttle 15 is related to the content of counter 18 so that said position can be obtained from the count value. Further, by rotating the motor 11 until errors between the count value and PWM signal become zero is controlled the opening of throttle 15. Thus, the throttle is controlled with an excellent responsiveness.
Patent JP-H01126801-A (JP)
Title: Superconducting waveguide
Inventor: IRI EIJI
IPC: H01P3/12
Filed: 1987-11-12
Abstract: PURPOSE:To transmit an electromagnetic wave with low loss by forming a superconducting thin film made of a ceramics group superconducting material to the inner face of a waveguide. CONSTITUTION:A square superconducting waveguide G1 is arranged in a transportation pipe 10 of similar square shape and a superconducting thin film 1 made of an optional material in ceramics group superconducting materials is formed to the inner face of the superconducting waveguide G1. Then a coolant is provided on a gap between the superconducting waveguide G1 and the transportation pipe 10. The electric resistance of the superconducting thin film 1 is lost by the coolant and the critical temperature when the Meissner effect appears is maintained. Thus, the power of an electromagnetic wave is sent with less loss.
Patent JP-H11122244-A (JP)
Title: Managing device for large scaled network
Inventor: ARAI TOSHIHIKO
IPC: G06F17/30
Filed: 1997-10-20
Abstract: PROBLEM TO BE SOLVED: To easily realize the real time management of a large scaled network by obtaining the number of the accumulation times of a state change from plural devices to be managed, comparing the number of state change times with the number of the state change times, which is obtained at previous time, judging whether the state is changed or not and obtaining present state information from the device to be managed, which judges that the state change occurs. SOLUTION: A manager device M 20 is periodically started and it sends a get request for obtaining an object (a) from an agent device A. The agent device A 21 sends counter information (a) as a get response against the request. The manager device 20 compares it with the value of counter information (a) at previous time. When they are not matched, the get request is sent to an agent device A 21-side for obtaining object groups B and C, the get response is obtained as the response, a change processing with the change of the state of the agent device A 21 is executed, and a processing for holding counter information (a) of this time is executed.
Patent JP-H07138642-A (JP)
Title: Production of grain-oriented electrical steel sheet excellent in magnetic property
Inventor: ISHIBASHI MAREMIZU
IPC: C21D8/12
Filed: 1993-11-16
Abstract: PURPOSE:To economically stabilize magnetic properties at a higher order by discriminating the necessity or unnecessity of annealing after hot rolling by low temp. slab heating method from AIN precipitation quantity and, as necessary, adding the annealing of hot rolled sheet. CONSTITUTION:A slab consisting of, by weight, <=0.075% C, 2.2-4.5% Si, 0.010-0.060% acid-soluble Al, <=0.0130% N, <=0.014% S+0.405 Se, 0.045-0.8% Mn and the balance Fe essentially is used. After the slab is heated to <1280 deg.C and hot rolled, the final high draft cold rolling of >=80% draft is executed, next, in a stage where decarburization annealing and final finish annealing are executed, when N content as AlN after hot rolling is taken as NasAlN and, at the time of N-NasAlN >=0.0010% and (NasAlN)/N <=0.75, the annealing of hot rolled sheet at 800-1200 deg.C is applied. After the completion of decarburization annealing, the grain size of primary crystallization until the final finish annealing is started is taken as 18-36mum, nitriding is executed while secondry recrystallization in the final finish annealing is started and nitrogen of >=0.0010% is absorbed into the steel sheet.
Patent JP-S62145002-A (JP)
Title: Herbicidal composition
Inventor: OKUDA HIROKI
IPC: A01N37/22
Filed: 1985-12-19
Abstract: PURPOSE:A herbicidal composition having wide herbicidal spectrum, showing sufficient effects with a small amount free from phytotoxicity to rice plant, comprising N-chloroacetyl-N-(2,6-diethylphenyl)glycine ethyl ester and others as active ingredients. CONSTITUTION:A herbicidal composition containing a compound shown by formula I, 3-chloro-2-[4-chloro-2-fluoro-5-(2-propynyloxy)phenyl]-4,5,-6,7- tetrahydro-2H-imidazole shown by formula II and N-(alpha,alpha-dimethylbenzyl)-alpha- bromo-tertiary butylacetamide in a ratio of 1:0.007-0.1:15. This herbicidal composition has wide herbicidal spectrum capable of withering main weeds in paddy fields, not only exhibits sufficient controlling effects with a small amount but also causes no phytotoxicity to rice plants. To use the composition as a herbicide, it is usually blended with a solid carrier, a liquid carrier, a surface active agent or other auxiliaries and prepared into emulsion, wettable powder, flowable agent, etc.
Patent JP-2001105443-A (JP)
Title: Method for producing laminated sheet
Inventor: HIRAOKA HIDEKI
IPC: B29C43/52
Filed: 1999-10-07
Abstract: PROBLEM TO BE SOLVED: To provide a laminated sheet for a printed wiring board using a liquid crystal polymeric fiber base material eliminating the point at issue of shrinkage and warpage, good in dimensional stability and having excellent electric characteristics such as a low dielectric constant or the like. SOLUTION: A liquid crystal polymeric fiber-containing laminate sheet is produced by heating an uncured curable resin to 220-300 deg.C to cure the same or heating the resin after curing to 220-300 deg.C.
Patent JP-H02132434-A (JP)
Title: Silver halide photographic sensitive material
Inventor: KOJIMA TETSUO
IPC: G03C1/09
Filed: 1988-11-14
Abstract: PURPOSE:To obtain a silver halide photographic sensitive material hardly undergoing deterioration in the photographic performance during storage, having high sensitivity, fit for rapid development and hardly causing fogging by incorporating at least one kind of specified seleno-ether compd. CONSTITUTION:At least one kind of seleno-ether compd. represented by formula I or II (where each of R and R' is a bivalent group contg. at least one among C, N, O, S and Se, each of Z and Z' is hydroxyl, ammonium, carboxylic acid or a salt thereof, sulfonic acid or a salt thereof, ether, thio-ether, seleno-ether, ureido, thioureido, oxycarbonylamino, acyl, sulfonyl, carbamoyl, carbonamido, sulfamoyl, etc., and R'' is alkyl, cycloalkyl, alkenyl, etc.) is incorporated. A silver halide photographic sensitive material having high sensitivity can be obtd.
Patent JP-H10135064-A (JP)
Title: Formation of outside electrode of laminated ceramic capacitor
Inventor: MIZOBATA MASATOSHI
IPC: H01G4/30
Filed: 1996-10-29
Abstract: PROBLEM TO BE SOLVED: To provide a formation method of an outside electrode of a thin film which is superior especially in connection property between an inside electrode and an outside electrode and in bonding strength to a ceramic body piece, regarding the formation method of an outside electrode of a laminated ceramic capacitor. SOLUTION: After a plurality of inside electrodes 2 are arranged inside a body piece 1 formed of ceramic, and the inside electrode 2 is exposed from the body piece 1, a first metallic film 4a having high-bonding strength to ceramic, and a second metallic film 4b having a diffusion coefficient which is different from that of a material of the inside electrode 2 are formed in order and subjected to heat treatment, an outside electrode 3 which makes a continuity with the inside electrode 2 is provided for forming an outside electrode of a laminated ceramic capacitor. According to the method, the inside electrode 2 is exposed sufficiently from a side edge face of the main body piece 1, and the connection to the outside electrode 3 is ensured.  Thus problems such as loss of an electrostatic capacity and increase of dielectric loss tangent (tan δ) are resolved and formation of the outside electrode 3 of a thin film of high bonding strength to a main body piece can be made.
Patent JP-S62146263-A (JP)
Title: Apparatus for producing electrophotographic sensitive body
Inventor: HINATA NAOHISA
IPC: G03G5/08
Filed: 1985-12-20
Abstract: PURPOSE:To form films to a uniform film thickness and quality in the stage of forming photosensitive layers on cylindrical substrates by a plasma CVD method by discharging a gaseous raw material from a discharge pipe opened into the spacing between electrodes which consist of metallic materials each having an arc-shaped section and face the substrates. CONSTITUTION:Conductive bar-shaped bases 13 are disposed in parallel on the same circumference in a vacuum vessel 11. The cylindrical conductive substrates 12 are mounted on the plural bases 13 in such a manner that the substrates can be driven to revolve. The counter electrodes 14 are formed of the plural metallic members each having the arc-shaped section and are disposed around the bases 13 apart at a spacing therefrom. A voltage is impressed between the electrodes 14 and the substrates 12 to generate glow discharge, by which the gaseous raw material introduced into the vacuum vessel 11 is decomposed and the photosensitive layers are formed on the surfaces of the substrates 12. The gas is discharged from the discharge pipe 17 opened 25 into the spacing between the electrodes 14.
Patent JP-H09126866-A (JP)
Title: Liquid level detector
Inventor: MORITO KATSUMI
IPC: G01F23/292
Filed: 1995-11-06
Abstract: PROBLEM TO BE SOLVED: To prevent the erroneous detection of a liquid level detector even when the surface of the detector is wetted with a liquid to be detected by providing a detecting body housing a light emitting section and a light receiving section in the detector and setting the inclined angle of the light emitted from the light emitting section larger than the directional characteristic of the light emitting section against the liquid level decreasing direction in a liquid tank. SOLUTION: When the surface level of kerosene contained in a fuel tank 5 descends to a 'No Kerosene' level which is lower than the position Q of a detecting body at which the presence/absence of the kerosene is discriminated, the light emitted from the light emitting diode 72 of a detecting section 21 is reflected by the curved surface 26 of the detecting body 21 and the light which falls within the range of the directional characteristic of the diode 73 reaches the phototransistor of a light receiving section 24. Therefore, 'No Kerosene' is judged, because the transistor 74 is turned on and the current is made to flow to the ground through a pull-up resistor 76 and the transistor and a collector-emitter voltage is inputted. Since the detecting body 21 is fitted so that the inclined angle of the light can become larger than that of the directional characteristic of the diode 73, the adhesion of the kerosene within the extent of the directional characteristic can be suppressed and the erroneous detection of the detector 21 can be prevented even when the kerosene adheres to the detector 21 due to the surface tension of the detector 21.
Patent JP-H02133961-A (JP)
Title: Semiconductor integrated circuit device
Inventor: SUGAYA NAOKO
IPC: H01L21/822
Filed: 1988-11-14
Abstract: PURPOSE:To realize a high-speed logic circuit by a method wherein a plurality of internal cell rows constituted of only complementary MOS elements and a plurality of internal cell rows constituted of only bipolar elements are arranged alternately inside an internal cell region. CONSTITUTION:A plurality of internal cell rows 3 constituted of only bipolar elements and a plurality of internal cell rows 4 constituted of only complementary MOS elements are arranged alternately in an internal cell region of an IC chip. Accordingly, the transfer delay time tpd can be made smaller that of an IC chip using a gate array type semiconductor integrated circuit device where a two-stage constitution of a complementary MOS element and a bipolar element is arranged in a matrix manner as one cell; a logic circuit can be constituted of only the complementary MOS element with reference to a low load capacity; the logic circuit can be constituted of the two-stage constitution of the complementary MOS element and the bipolar element with reference to a high load capacity; as a result, a high-speed logic circuit can be realized.