baber/WOPTO huggingface dataset:
Patent TW-524032-B (TW)
Title: Component holding head, component mounting apparatus using same, and component mounting method
Inventor: OGIMOTO SHINICHI
IPC: H05K13/04
Filed: 2002-02-26
Granted: 2003-03-11
Abstract: An electronic component holding head, an electronic component mounting apparatus using same, and a method for mounting an electronic component, are provided for use in mounting an electronic component having a positioning mark formed on a film member. The electronic component holding head has a main electronic component holding unit, a vacuum chucking part facing the surface of the electronic component to be held by vacuum chucking so as to hold the electronic component, and a light path for guiding light shined onto a positioning mark formed at an edge part of the electronic component for the purpose of correcting a position offset between the electronic component and the substrate to which the electronic component is to be mounted, the vacuum chucking part holding the electronic component at a position which is on a straight line substantially parallel to an edge of the electronic component and substantially mutually orthogonal over the positioning mark of the electronic component, and which avoids the positioning mark.
Patent TW-527699-B (TW)
Title: Method for manufacturing a semiconductor device
Inventor: LIN SHUN-LI
IPC: H01L21/266
Filed: 2002-04-16
Granted: 2003-04-11
Abstract: A method for fabricating a MOSFET structure having a source/drain extension and a source/drain region is disclosed, in which a basic antireflection coating is formed over a semiconductor substrate. A photoresist layer is formed over the basic antireflection coating. The photoresist layer is exposed to a radiation for transferring a pattern on the photoresist layer and the exposed photoresist layer is developed to form an opening over the areas for forming the source/drain regions, as a result a photoresist pattern with footing structures at a bottom corner of the photoresist pattern is formed. An ion implantation using the photoresist pattern as a mask, to simultaneously to form a source/drain extension and a source/drain region.
Patent TW-558693-B (TW)
Title: Driving circuit design for display device
Inventor: SUNG CHIH-FENG
IPC: G09G3/32
Filed: 2002-04-17
Granted: 2003-10-21
Abstract: A driving circuit design for a display device. This invention uses the voltage-driven circuit of a conventional TFT-LCD such that the pixel is capable of outputting a different driving current to each OLED having a characteristic red, green or blue coloration under identical data voltage condition. Different driving currents are produced by adjusting channel width/length ratio of the TFT driver in each pixel. Consequently, an appropriate luminance ratio between red, green and blue lights may be set to reproduce white light through the red, green and blue OLED and hence attain full coloration.
Patent TW-541607-B (TW)
Title: Laser spectral engineering for lithographic process
Inventor: KROYAN ARMEN
IPC: H01S3/13
Filed: 2002-04-26
Granted: 2003-07-11
Abstract: An integrated circuit lithography technique called spectral engineering by Applicant, for bandwidth control of an electric discharge laser. In a preferred process, a computer model is used to model lithographic parameters to determine a desired laser spectrum needed to produce a desired lithographic result. A fast responding tuning mechanism is then used to adjusts the center wavelength of laser pulses in a burst of pulses to achieve an integrated spectrum, for the burst of pulses approximating the desired laser spectrum. The laser beam bandwidth is controlled to produce an effective beam spectrum having at least two spectral peaks in order to produce improved pattern resolution in photo resist film. Line narrowing equipment is provided having at least one piezoelectric drive and a fast bandwidth detection control system having a time response of less than about 2.0 millisecond. In a preferred embodiment, A wavelength tuning mirror is dithered at dither rates of more than 500 dithers per second in phase with the repetition rate of the laser. In the case, the piezoelectric drive was driven with a square wave signal and in a second case it was driven with a sine wave signal. In another embodiment, the maximum displacement was matched on a one-to-one basis with the laser pulses in order to produce a desired average spectrum with two peaks for a series of laser pulses. Other preferred embodiments utilize three separate wavelength tuning position producing a spectrum with three separate peaks.
Patent TW-I246165-B (TW)
Title: Method and installation for fabricating buried straps on one side
Inventor: GOEBEL BERND
IPC: H01L21/8242
Filed: 2002-06-25
Granted: 2005-12-21
Abstract: To produce buried straps on one side in deep trench structures, it is provided for a PVD process to be used to deposit masking material in the recess (7) inclined at an angle (a), with the result that a masking wedge (17) is produced on the buried strap (13), on one side in the base region of the recess, and that the masking wedge serves as a mask during a subsequent anisotropic etching step, which is carried out selectively with respect to the masking wedge (17), for removing the buried strap (13) on one side.
Patent TW-594414-B (TW)
Title: Positive photoresist composition
Inventor: KODAMA KUNIHIKO
IPC: G03F7/039
Filed: 2002-06-25
Granted: 2004-06-21
Abstract: Provided is a chemically amplified positive photoresist composition having excellent properties such as resolution, exposure margin, edge roughness of pattern, density dependency. A positive photoresist composition comprises (A) at least two photoacid generating agents which generate an acid upon irradiation with an active light or radiation and are selected from a sulfonate whose cationic portion consists of iodonium or sulfonium and whose anionic portion consists of anion represented by RFSO3 wherein RF represents a fluorine-substituted alkyl group having 1 to 20 carbon atoms and the difference in carbon number of the anionic portion is in the range of 2 to 15, and (B) a resin whose solubility in an alkali developing solution is increased by the action of an acid and has repeating unit of specific structure.
Patent TW-588316-B (TW)
Title: Method for driving liquid crystal display, liquid crystal display device and monitor provided with the same
Inventor: YAMAGUCHI HISASHI
IPC: G09G3/36
Filed: 2002-07-01
Granted: 2004-05-21
Abstract: A method is provided for driving a liquid crystal display capable of preventing degradation of linearity of a gamma characteristic, of achieving display of a high quality image in a simple and low-priced configuration and of solving problems associated with environmental changes, frequency characteristic of timing signals, change in a gamma characteristic caused by luminance of a backlight, or dispersion in a gamma characteristic occurring during processes of manufacturing a color liquid crystal display. The method includes acquirement of first corrected red data, first corrected green data, and first corrected blue data each being of 10 bits to which information to change a gray scale two or more times for every red data, green data, and blue data has been added when a gamma correction is made to red, green, and blue data each being of 8 bits and generation of data red, green, and blue signals to be fed to a data electrode of a liquid crystal display to perform frame rate control.
Patent TW-554546-B (TW)
Title: Image pickup apparatus
Inventor: SAKURAI KATSUHITO
IPC: H04N5/335
Filed: 2002-07-12
Granted: 2003-09-21
Abstract: There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
Patent TW-593548-B (TW)
Title: Siloxane resins
Inventor: BOISVERT RONALD PAUL
IPC: C08G77/18
Filed: 2002-07-26
Granted: 2004-06-21
Abstract: This invention pertains to a siloxane resin composition comprising R1SiO3/2 siloxane units and (R2O)bSiO(4-b)/2 siloxane units wherein R1 is an alkyl group having 1 to 5 carbons; R2 is a branched alkyl group having 3 to 30 carbons, b is from 1 to 3. The siloxane resin contains a molar ratio of R1SiO3/2 units to (R2O)bSiO(4-b)/2 units of 1:99 to 99:1. The siloxane resin is useful to make insoluble porous resins and insoluble porous coatings. Heating a substrate coated with the siloxane resin at a sufficient temperature effects removal of the R2O groups to form an insoluble porous coating having a dielectric constant in the range of 2.1 to 3, a porosity in the range of 2 to 40 volume percent and a modulus in the range of 1.9 to 20 GPa.
Patent TW-558732-B (TW)
Title: Light source apparatus and liquid crystal display apparatus using the same
Inventor: YAMAMOTO NORIKAZU
IPC: H01J11/00
Filed: 2002-09-09
Granted: 2003-10-21
Abstract: The subject of the present invention is to provide a light source apparatus with high light-emitting efficiency and liquid crystal display (LCD) apparatus using the same. The invention is provided with the followings: at least one light emitting tube 20; discharging medium material, which is sealed inside the light emitting tube 20; and the first and the second electrodes 21, 22 for exciting the discharging medium material. In addition, the first electrode is disposed inside or outside the light emitting tube 20. The second electrode 22 contacts with the outside of the light emitting tube 20 through plural discontinuous contact portions, which have different distances from the first electrode.
Patent TW-577125-B (TW)
Title: Method for forming a silicon nitride layer
Inventor: LIN SHIAN-JYH
IPC: C23C14/06
Filed: 2002-10-25
Granted: 2004-02-21
Abstract: A method for forming a silicon nitride layer including the following steps: providing a substrate with silicon layer on it; performing a nitrogen ion implantation process to the silicon layer; and performing a thermal nitridation process to form a silicon nitride layer in the surface of the silicon layer. Besides, the present invention also provides the use of the above method in the process for forming a bottle shape trench.
Patent TW-575689-B (TW)
Title: A chemical etching process for de-oxidized layer, deburring and fillet edge of the harden high carbon tool steel
Inventor: HUANG CHING-AN
IPC: C23F3/04
Filed: 2002-10-25
Granted: 2004-02-11
Abstract: In this innovation an electrolyte for chemical etching has been developed, which can be used to take away the oxidized film and remove cut as well as punched edge bur of the harden treated high carbon tool steel (SK3, SK4 and SK5); meanwhile, the fillet edge of the cut section can be achieved. An oxidized film about a few micrometers thick can be built up when the cut and punched steel is quenched and tempered at high temperature. Due to high strength and hardness of the steel, the oxidized film and the edge bur are difficult to remove with mechanical grinding. Therefore, this innovation offers a suitable electrolyte, which is composed of only a little chemical reagent and oxidizer in deionized water, to remove the oxidized film and the punched bur simultaneously using the chemical etching method. In this innovated etching method, the steel parts with edge bur and the electrolyte are put in a chemical etching bath, and then stirred to obtain uniform etched parts. Only in a few minutes the oxidized film and cut edge bur of the harden steel can be eradicated; meanwhile a fillet edge of the cut section can be obtained. Because only little amount of the chemical etchant (5-50g/liter) is required, the effluent standard of waste water is very easily to accomplish. In addition, the etching process is a very economical method and suitable for mass production, such as metallic parts used in textile industry and small high precision cut parts.
Patent TW-I250133-B (TW)
Title: Large-sized substrate and method of producing the same
Inventor: SHIBANO YUKIO
IPC: G02F1/13
Filed: 2003-01-29
Granted: 2006-03-01
Abstract: A large-sized substrate having a diagonal length of not less than 500 mm and a ratio of flatness/diagonal length of not more than 6.0x10<-6> is disclosed. By use of the large-sized substrate for exposure of the present invention, the exposure accuracy, particularly the register accuracy and resolution are enhanced, so that it is possible to achieve high-precision exposure of a large-sized panel. With the processing method according to the present invention, it is possible to stably obtain a large-sized photomask substrate with a high flatness, and since the CD accuracy (dimensional accuracy) at the time of exposure of the panel is enhanced, it is possible to perform exposure of a fine pattern, leading to a higher yield of the panel. Furthermore, by applying the processing method according to the present invention, it is also possible to create an arbitrary surface shape.
Patent TW-I220820-B (TW)
Title: Stall avoidance schemes using HARQ process receiving status
Inventor: JIANG SAM SHAW-SHIANG
IPC: H04L1/00
Filed: 2003-01-30
Granted: 2004-09-01
Abstract: This invention employs a quicker reordering buffer gap removing and buffered data block delivery method. The invention uses several parameters to support its operation. One of the pertinent parameters is a new data indicator, another is an array variable, TTI-states, to track at least n consecutive data block receiving statues of TTIs of the n active HARQ processes of the HARQ entity at the receiver side.
Patent TW-I221675-B (TW)
Title: MOS-type variable capacitance element
Inventor: OGAWA TAKAOKI
IPC: H01L29/94
Filed: 2003-03-03
Granted: 2004-10-01
Abstract: In the invention, an n-well (3) is formed in a p-type semiconductor substrate (2). A gate insulating film (4) is formed on the p-type semiconductor substrate (2) and the n-well (3). A gate electrode (6) is formed on the gate insulating film (4). A source layer (8), which is selectively diffused with a high concentration of n-type impurities and is adjacent to the gate insulating film (4), is formed on the surface of p-type semiconductor substrate (2), the n-well (3) and a region extending over both the p-type semiconductor substrate (2) and the n-well (3). Additionally, a contact layer (11), which is apart from the source layer (8) and is selectively diffused with a high concentration of p-type impurities, is formed. By applying a terminal-to-terminal voltage VT between the source layer (8) and the gate electrode (6), a capacitance characteristic of good linearity in a wide range with respect to the terminal-to-terminal voltage VT is achieved. The invention provides a kind of MOS variable capacitive element that has a good linear characteristic in a wide range with respect to the terminal-to-terminal voltage VT as well as the performance improvement of a VCO circuit. In addition, the invented MOS variable capacitive element has a simple structure and can be produced without the need of any extra mask and manufacturing steps.
Patent TW-I280195-B (TW)
Title: Ink cartridge and printing device
Inventor: SHINADA SATOSHI
IPC: B41J2/01
Filed: 2003-03-26
Granted: 2007-05-01
Abstract: Disclosed is an ink cartridge and printing device wherein effectively maintains connection between a coupling terminal member of the ink cartridge and a coupling terminal of the printing device and increase a degree of freedom on installation position of the coupling terminal member of the ink cartridge. The solution is that an ink cartridge 210 installed in a printing device for supplying ink to the printing device includes an ink cartridge body 220 containing ink therein, an ink supply section 240 arranged on a bottom surface 222 of the ink cartridge body 220 and forming an ink supply opening 242 that is offset toward a first sidewall 224 intersecting the bottom surface 222 of the ink cartridge body 220; an information memory 260 comprising contact terminal member 262 arranged on a second sidewall 226 that intersects the bottom surface 222 of the ink cartridge body 220 and is opposite to the first side wall 224; a positioning member 280 that protrudes from the second sidewall 226 for positioning the ink cartridge 210 with respect to the printing device when mounting the memory device.
Patent TW-I226483-B (TW)
Title: Improved manufacturing process method of light control film
Inventor: FANG CHUNG-YANG
IPC: G02B5/00
Filed: 2003-04-01
Granted: 2005-01-11
Abstract: There is provided an improved manufacturing process method of light control film, which comprises using a retardation film as a substrate and coating ultraviolet glue on its surface, making the ultraviolet glue construct a micro-lens array structure by a rolling and pressing formation manner, irradiating and curing the ultraviolet glue by ultraviolet ray, then coating a polymer fluoride on the surface of the micro-lens array structure to reduce light scatter generated by the micro structure, and finally adhering a polarizer film to the retardation film, which is then attached to the upper glass surface of the liquid crystal display panel by optical glue.
Patent TW-587340-B (TW)
Title: Pixel framework of thin film transistor array substrate and its formation method
Inventor: LIU HONG-DA
IPC: H01L29/786
Filed: 2003-04-01
Granted: 2004-05-11
Abstract: A kind of thin film transistor array substrate pixel and its formation method capable of eliminating the generation of bad pattern due to the uneven exposure caused by the protrusion of carrying platform in the photolithography process and shortening the exposure time are disclosed in the present invention. A shielding layer is formed beneath a photosensitive resin layer to shield part region of the pixels for alleviating the effect of light irradiation onto the protrusion of the carrying platform in the photolithography process. In addition, the shielding layer is composed of high-reflectivity multi-layered reflection layer or metal layer, in which light passes through the shielding layer and performs exposure again onto the photosensitive resin layer so as to reduce the required exposure time of photolithography process.
Patent TW-I231994-B (TW)
Title: Strained Si FinFET
Inventor: CHANG SHU-TONG
IPC: H01L29/786
Filed: 2003-04-04
Granted: 2005-05-01
Abstract: The strained Si surrounding the SiGe embedded body on the SOI (silicon on insulator) substrate to form novel FinFET. The mobility in the channel is enhanced due to the strain of Si channel. The strained Si FinFET is composed of a SOI substrate, an embedded SiGe body, a strained Si channel surrounding layer, an oxide layer, a ploy Si gate electrode (or metal gate electrode), source and drain.
Patent TW-I220300-B (TW)
Title: Method for manufacturing embedded non-volatile memory with sacrificial layer
Inventor: HWANG CHONG-JEN
IPC: H01L21/8246
Filed: 2003-04-04
Granted: 2004-08-11
Abstract: A process uses two layers of polysilicon for fabricating high-density nonvolatile memory, such as mask ROM or SONOS memory, integrated with advanced peripheral logic on a single chip. The method includes covering a gate dielectric layer with a sacrificial layer of silicon nitride; using a masks for defining line structures in the layer of silicon nitride for the bit line implant processes; depositing a dielectric material among the line structures to fill gaps among the line structures; planarizing the deposited oxide and said layer of silicon nitride; removing the silicon nitride and applying a layer of polysilicon material; patterning wordlines in the array portion, and transistor gate structures in said non-array portion, and applying LDD, silicide and other logic circuit processes.
Patent TW-I240302-B (TW)
Title: Method for increasing adhesion of rework photoresist on oxynitride film
Inventor: WU WEN-BIN
IPC: G03F7/11
Filed: 2003-04-08
Granted: 2005-09-21
Abstract: A method for increasing adhesion of rework photoresist on an oxynitride film. A substrate having an oxynitride layer thereon is provided. Next, a patterned photoresist layer is formed on the oxynitride layer. The patterned photoresist layer is stripped by acid solution or oxygen-contained plasma. Next, development solution treatment is performed on the oxynitride layer to repair the damaged oxynitride layer during stripping the patterned photoresist layer. Finally, a patterned rework photoresist layer is formed on the oxynitride layer without collapse.
Patent TW-I223028-B (TW)
Title: Control system for plunger-type fuel pump
Inventor: NAMARI TAKASHI
IPC: F02D41/34
Filed: 2003-06-05
Granted: 2004-11-01
Abstract: An internal combustion engine includes an injector that injects fuel into a cylinder. A plunger-type fuel pump (8) pumps the fuel to the injector from a fuel tank. A control system for the fuel pump includes a unit for determining an injection start timing of the injector, and a drive unit for driving the fuel pump for a second predetermined time that starts a first predetermined time earlier than the injection start timing. This control system makes stable combustion possible even when there are pressure variations in the fuel pumped to the injector.
Patent TW-I276327-B (TW)
Title: Wireless LAN (WLAN) system and WLAN user terminal
Inventor: ZUNIGA JUAN CARLOS
IPC: H04W36/00
Filed: 2003-07-03
Granted: 2007-03-11
Abstract: A wireless LAN (WLAN) system for communications among a plurality of users within a basic service system or cell comprising a switching access point (SAP) for transmitting and receiving point-to-multipoint communications to and from the users. A plurality of ports are available at the SAP, each of which assigned to a unique carrier frequency for isolating communications among the users to prevent collisions, with the ability of frequency assignment to be non-permanent, and a capability of dynamic or pseudo-random carrier assignment. An alternative embodiment of the SAP uses beamforming to provide spatial ports for assignments to the plurality of users.
Patent TW-I263797-B (TW)
Title: Zoom lens system
Inventor: BETENSKY ELLIS I
IPC: G02B27/64
Filed: 2003-07-22
Granted: 2006-10-11
Abstract: A zoom lens system is disclosed. The zoom lens system forms a final image of an object and a first intermediate real image between the object and the final image. The zoom lens system includes a first optical unit located between the object and the first intermediate real image. The first optical unit comprises at least one optical subunit which is moved to change the size (magnification) of the first intermediate real image. The zoom lens system also includes a second optical unit located between the first intermediate real image and the final image, at least a portion of which is moved to change the size (magnification) of the final image. The zoom lens system provides a wide zoom range of focal lengths with continuous zooming between the focal lengths and optional image stabilization.
Patent TW-592019-B (TW)
Title: Method for interconnecting multi-layer printed circuit board
Inventor: LEE SUNG-GUE
IPC: H05K3/40
Filed: 2003-08-08
Granted: 2004-06-11
Abstract: A method for fabricating a multi-layer printed circuit board includes: forming an etching resist layer on a first metal layer and forming a plating groove on the etching resist layer to selectively expose the first metal layer; forming a plated layer at the surface of the first metal layer exposed by the plating groove through a plating process to form connection protrusion; removing the etching resist layer and forming an insulation layer at the first metal layer; and positioning a second metal layer at the surface of the insulation layer, so as to be connected to an end portion of the connection protrusion. A strength of the base material is increased so as to be easily handled and a productivity can be increased. By forming the connection protrusion through the plating process, a material loss can be reduced.