baber/WOPTO huggingface dataset:
Patent TW-202217960-A (TW)
Inventor: YOKOYAMA TAKAHIRO
IPC: H01L21/3065
Filed: 2021-09-15
Abstract: An etching method includes: (a) providing a substrate including a silicon-containing film on a substrate support; (b) adjusting a temperature of the substrate support to -20 ℃ or lower; (c) supplying a processing gas including a nitrogen-containing gas, into the chamber; (d) etching the silicon-containing film by using plasma generated from the processing gas. A recess is formed by etching the silicon-containing film, and a by-product containing silicon and nitrogen adheres to a side wall of the recess. The etching method further includes (e) setting at least one etching parameter of the temperature of the substrate support and the flow rate of the nitrogen-containing gas included in the processing gas, to adjust the width of the bottom of the recess according to an adhesion amount of the by-product, before (b).
Patent TW-202315986-A (TW)
Title: 載帶電鍍調節裝置
Inventor: TSAI SUI-HO
IPC: C25D21/12
Filed: 2021-10-14
Abstract: 本發明公開了一種載帶電鍍調節裝置，包括：兩個載帶調節組件，兩個載帶調節組件分別位於載帶的兩側，兩個載帶調節組件關於載帶對稱設置，載帶調節組件上朝向載帶的一側具有載帶導向板，載帶導向板上朝向載帶的一側開設有導向槽，導向槽用於對載帶的邊緣進行支撐和導向；陽極調節組件，陽極調節組件位於載帶導向板的上方，陽極調節組件上設有陽極板，陽極板與載帶之間的距離可調，陽極板上均勻開設有複數網孔，網孔用以供電鍍液內的氣泡通過。本發明的陽極板與載帶之間間距可調，滿足了不同工藝的電鍍要求；通過在陽極板上開設複數網孔，便於電鍍過程中產生的氣泡向上排出，避免氣泡影響電鍍過程，從而提高了電鍍效果。
Patent TW-202242345-A (TW)
Title: Measurement device and substrate inspection device
Inventor: MATSUKUBO TAKAHIRO
IPC: G01B11/24
Filed: 2021-10-15
Abstract: This measurement device comprises an imaging unit, a first projection unit for projecting linear first measurement light onto an object under measurement from a direction inclined by a first angle, a second projection unit for projecting linear second measurement light onto the object under measurement from a direction inclined by a second angle, and a control unit for using the first measurement light and second measurement light projected onto the object under measurement imaged by the imaging unit to remove reflected light noise and acquire information about the height of the object under measurement.
Patent TW-202209559-A (TW)
Title: Gate stack design for gan e-mode transistor performance
Inventor: DASGUPTA SANSAPTAK
IPC: H01L21/22
Filed: 2017-05-31
Abstract: A gate stack structure is disclosed for inhibiting charge leakage in III-V transistor devices. The techniques are particularly well-suited for use in enhancement-mode MOSHEMTs, but can also be used in other transistor designs susceptible to charge spillover and unintended channel formation in the gate stack. In an example embodiment, the techniques are realized in a transistor having a III-N gate stack over a gallium nitride (GaN) channel layer. The gate stack is configured with a relatively thick barrier structure and wide bandgap III-N materials to prevent or otherwise reduce channel charge spillover resulting from tunneling or thermionic processes at high gate voltages. The barrier structure is configured to manage lattice mismatch conditions, so as to provide a robust high performance transistor design. In some cases, the gate stack is used in conjunction with an access region polarization layer to induce two-dimensional electron gas (2DEG) in the channel layer.
Patent TW-202235759-A (TW)
Title: Housing arrangement
Inventor: BINDER JULIAN
IPC: F16B4/00
Filed: 2021-11-23
Abstract: The invention relates to a housing arrangement (1) of a vehicle which can be operated in particular by muscle power and/or motor force, comprising a housing (2), and a sleeve (3) which is arranged in an opening (25) in the housing (2), wherein the sleeve (3) has a press portion (31), a knurling (32) and a sleeve flange (33), wherein a press fit is formed between the press portion (31) and the opening (25), wherein the knurling (32) is in form-fitting engagement with the housing (2) in order to secure the sleeve (3) against twisting relative to the housing (2), and wherein the sleeve flange (33) bears against the housing (2).
Patent TW-202231778-A (TW)
Title: Epoxy resin composition, cured product thereof, and laminate
Inventor: OTSU MASATO
IPC: C08L63/00
Filed: 2021-12-01
Abstract: The purpose of the present invention is to provide an epoxy resin composition that exhibits an excellent deformation-resistant flexibility and adherence to substrates, can easily be detached after use, and tis suitable for use as a structural adhesive. Specifically provided is an epoxy resin composition that comprises an epoxy resin (A) expressed by formula (1) and having an epoxy equivalent weight of 500-10,000 g/eq [in formula (1), Ar is an aromatic ring; X is a structural unit having an alkylene chain; Y is a structural unit having a polyether chain; R11 and R12 are a glycidyl ether group or 2-methylglycidyl ether group; R13 and R14 are a hydroxyl group, glycidyl ether group, or 2-methylglycidyl ether group; R15 and R16 are a hydrogen atom or methyl group; m1 and m2 are 0-25 and m1 + m2 ≥ 1; p1 and p2 are 0-5; and q is 0.5-5.], an epoxy resin (B) having an epoxy equivalent weight of 100-300 g/eq, and heat-expandable particles (C).
Patent TW-202213613-A (TW)
Title: electrostatic chuck
Inventor: SHIRAISHI JUN
IPC: H01L21/68
Filed: 2019-10-14
Abstract: To provide an electrostatic chuck provided with a porous part, which is capable of suppressing the occurrence of arc discharge furthermore. There is provided an electrostatic chuck including: a ceramic dielectric substrate having a first major surface for mounting a suction target and a second major surface on opposite side from the first major surface; a base plate supporting the ceramic dielectric substrate and including a gas feed channel; and a first porous part provided at a position between the base plate and the first major surface of the ceramic dielectric substrate, the position being opposed to the gas feed channel. The ceramic dielectric substrate includes a first hole part located between the first major surface and the first porous part. The first porous part includes a porous section including a plurality of pores, and a first compact section being more compact than the porous section. As projected on a plane perpendicular to a first direction from the base plate to the ceramic dielectric substrate, the first compact section is configured to overlap the first hole part, and the porous section is configured not to overlap the first hole part.
Patent TW-202235473-A (TW)
Title: Active energy ray-curable resin composition, cured product, insulation material and resist member
Inventor: YAMADA SHUNSUKE
IPC: H05K3/28
Filed: 2021-12-21
Abstract: The present invention provides an active energy ray-curable resin composition comprising a resin (A) that has an acid group and a polymerizable unsaturated group and a resin (B) that is other than the resin (A) and has a polymerizable unsaturated group and a urethane bond, said active energy ray-curable resin composition being characterized in that the resin (B) comprises, as essential starting materials, an epoxy resin (b1), an unsaturated monobasic acid (b2), a (meth)acrylate compound (b3) having a hydroxyl group and a compound (b4) having an isocyanate group. This active energy ray-curable resin composition has excellent alkali developability and a cured product thereof shows excellent elongation, high elasticity and good adhesion to a base material.
Patent TW-202241398-A (TW)
Title: Pharmaceutical composition comprising ep2 antagonist
Inventor: WATANABE AKIO
IPC: A61K31/44
Filed: 2021-12-23
Abstract: A purpose of the present invention is to provide a pharmaceutical composition useful for the prevention and/ or treatment of a disease associated with the activation of an EP2 receptor. A compound represented by general formula (IA): (wherein all symbols have the same meanings as those described in the specification) or a pharmaceutically acceptable salt thereof has a potent antagonistic activity against an EP2 receptor, and therefore a pharmaceutical composition comprising a compound represented by general formula (I-A) or a pharmaceutically acceptable salt thereof can be used as a prophylactic and/or therapeutic agent for a disease associated with the activation of an EP2 receptor.
Patent TW-202329535-A (TW)
Title: High-order mode patch antenna with high gain including an antenna layer, waveguide layers, coupling layers, and a grounding layer
Inventor: GUO TING-WEI
IPC: H01Q1/38
Filed: 2022-01-04
Abstract: This invention relates to a high-order mode patch antenna with high gain, including an antenna layer, waveguide layers, coupling layers, and a grounding layer. The antenna layer includes a first dielectric plate and a patch antenna. The patch antenna is a TM 05 mode patch antenna. The patch antenna is arranged on the first dielectric plate. A first slotted hole and a second slotted hole are provided in two reverse current positions of the patch antenna facing the vertical current direction respectively. A bottom end of each first slotted hole is adjacent to a top end of each second slotted hole and separated from the top end of each second slotted hole by a first spacing distance. The coupling layer and the waveguide layer are staggered and stacked in sequence from top to bottom between the antenna layer and the grounding layer. Each waveguide layer and each coupling layer together form a differential feeding module feeding power to the patch antenna simultaneously by using two differential feeding signals with the same amplitude and opposite phases.
Patent TW-202303994-A (TW)
Title: Semiconductor device
Inventor: SIO KAM-TOU
IPC: H01L29/92
Filed: 2022-01-07
Abstract: A semiconductor device includes a substrate having a first side and a second side. The semiconductor device on the first side includes: an active region that extends along a first lateral direction and comprises a first sub-region and a second sub-region; a first gate structure that extends along a second lateral direction and is disposed over the active region, with the first and second sub-regions disposed on opposite sides of the first gate structure, wherein the second lateral direction is perpendicular to the first lateral direction; and a first interconnecting structure electrically coupled to the first gate structure. The semiconductor device on the second side includes a second interconnecting structure that is electrically coupled to the first and second sub-regions and configured to provide a power supply. The active region, the first gate structure, the first interconnecting structure, and the second interconnecting structure are collectively configured as a decoupling capacitor.
Patent TW-202234160-A (TW)
Title: Polyimide precursor resin composition and method for manufacturing same
Inventor: MURAKAMI KOHEI
IPC: G03F7/028
Filed: 2022-01-11
Abstract: The purpose of the present disclosure is to provide a method for manufacturing a polyimide (PI) precursor resin composition that has excellent resolution performance, a broad range of available exposure and good handling properties. Provided is a method for manufacturing a PI precursor resin composition that comprises a PI precursor resin, an exposure light absorber, a photopolymerization initiator and a solvent. The PI precursor resin is selected from among materials having an absorbance parameter Xp for a light species within a range of 0.001-0.20, the exposure light absorber is selected from among materials having an absorbance parameter Xt for the light species within a range of 0.01-0.05, and the photopolymerization initiator is selected from among materials having an absorbance parameter Xr for the light species within a range of 0-0.04. On the basis of an assumed thickness D of a film that is formed by applying the PI precursor resin composition and desolventing, the addition amount (parts by mass) [alpha] of the exposure light absorber and the addition amount (parts by mass) [beta] of the photopolymerization initiator are determined so as to satisfy the formula: 0.7 ≤ (Xp + Xt * [alpha] + Xr * [beta]) * D ≤ 2.2.
Patent TW-202238664-A (TW)
Title: Plasma processing apparatus and plasma processing method wherein the plasma processing apparatus comprises a first chamber, a first exhaust unit, a plasma generation unit, a first gas supply unit, a second chamber, a conveying unit, a second exhaust unit, a second gas supply unit and a controller
Inventor: YOSHIMORI TOMOAKI
IPC: H01L21/67
Filed: 2022-02-15
Abstract: The present invention provides a plasma processing apparatus capable of suppressing pollution caused by pollutants and a plasma processing method. The plasma processing apparatus according to the embodiment comprises: a first chamber capable of maintaining a reduced gas environment from a higher pressure and carrying processed substances inside; a first exhaust unit capable of reducing the internal pressure of the first chamber to a specified pressure; a plasma generation unit capable of generating the plasma; a first gas supply unit capable of supplying process gas to the interior of the first chamber and to the region generating the plasma; a second chamber connected with the first chamber through a gate valve and capable of maintaining a reduced gas environment from a higher pressure; a conveying unit arranged in the interior of the second chamber and capable of conveying the processed substances in between the second chamber and the first chamber; a second exhaust unit capable of reducing the internal pressure of the second chamber to a specified pressure; a second gas supply unit capable of supplying gas to the interior of the second chamber; and a controller capable of controlling the conveying unit, the second exhaust unit, and the second gas supply unit. When the conveying unit transports the processed substances, the controller controls the second exhaust unit to make the pressure inside the second chamber roughly equal to the pressure inside the first chamber. At the end of the conveying unit transporting the processed substances, the second gas supply unit is controlled to supply the gas to the inside of the second chamber.
Patent TW-202326189-A (TW)
Title: Backlight module with staggered diffusion parts and light collecting parts and display
Inventor: Fang mao-sen
IPC: G02B6/00
Filed: 2022-02-16
Abstract: The utility model relates to a backlight module with staggered diffusion parts and light collecting parts and a display. The backlight module comprises a plurality of light-emitting units and a first optical film, the light-emitting units are arranged at intervals and can project light, a plurality of diffusion parts and a plurality of light collecting parts are formed on the surface, facing the light-emitting units, of the first optical film, the diffusion parts correspond to the positions of the light-emitting units respectively, each diffusion part covers the corresponding light-emitting unit, and the light collecting parts are arranged on the surface, facing the light-emitting units, of the first optical film. The display comprises a backlight module and a display panel, the display panel is located on the other side, opposite to the light emitting unit, of the first optical film, and the light emitting unit is arranged on the display panel through position matching of the diffusion parts, the light collecting parts and the light emitting unit. The backlight module can homogenize light rays when the light mixing distance is small, so that the optical taste of the display is maintained when the thickness is reduced, and the optical taste is improved when the same thickness is maintained.
Patent TW-202240919-A (TW)
Title: Thin film transistor, display device, electronic device and method for producing thin film transistor
Inventor: HOSONO HIDEO
IPC: H01L49/02
Filed: 2022-02-21
Abstract: A thin film transistor according to one embodiment of the present invention is formed on a substrate and comprises: a channel which is formed of at least a part of a metal oxide semiconductor layer that contains at least indium (In); a gate electrode; a gate insulating layer which is arranged between the channel and the gate electrode; and a source electrode and a drain electrode, which are connected to the metal oxide semiconductor layer. For example, a threshold shift due to voltage stress is effectively suppressed by setting the average concentration of carbon atoms in a region from the surface to the depth of 5 nm of the channel to 1.5*1021cm-3 or less.
Patent TW-202308966-A (TW)
Title: Cubic boron nitride sintered body tool
Inventor: HARADA TAKASHI
IPC: C04B35/5831
Filed: 2022-02-22
Abstract: A cubic boron nitride sintered material tool contains a first sintered material at least on a cutting edge, and the first sintered material contains a plurality of cBN grains. cBN grains located on a surface of the cutting edge contain a cubic boron nitride phase composed of a cBN crystal structure, and a hexagonal boron nitride phase composed of a hBN crystal structure. When a ratio I[pi]*/I[sigma]* between an intensity of a [pi]* peak derived from a [pi] bond of hBN in the hexagonal boron nitride phase and an intensity of a [sigma]* peak derived from a [sigma] bond of hBN in the hexagonal boron nitride phase and a [sigma] bond of cBN in the cubic boron nitride phase is determined for the cBN grain located on the surface of the cutting edge by measuring an energy loss associated with excitation of K-shell electrons of boron by TEM-EELS, the ratio I[pi]*/I[sigma]* of the cBN grain on the surface of the cutting edge is 0.1 to 2, and the ratio I[pi]*/I[sigma]* of the cBN grain at a depth position of 5 [mu]m in a normal direction to the surface of the cutting edge from the surface of the cutting edge is 0.001 to 0.1.
Patent TW-202247807-A (TW)
Title: Dust collector
Inventor: AKASE Miki
IPC: A47L7/04
Filed: 2022-03-03
Abstract: A dust collector according to the present invention comprises: a suction source which generates a suction force for suctioning grit and dust so as to generate a suction airflow for conveying grit and dust; a dust storage part for storing the grit and dust conveyed by the suction airflow; an ion generation unit for generating ions; and an ion feeding unit which, with less power consumption than that by the suction source, generates a feeding airflow for feeding the ions generated by the ion generation unit to the dust storage part.
Patent TW-202246273-A (TW)
Inventor: Lu hong-fu
IPC: C07D491/04
Filed: 2022-03-04
Abstract: 本發明公開了新型苯并氮雜卓并環衍生物，具體地本發明公開了式（Ⅰ）所示化合物或其藥效上可接受的鹽，以及該化合物可作用於診斷、預防和/或治療與血管加壓素受體相關的疾病。
Patent TW-202236029-A (TW)
Title: Print process for color conversion layer
Inventor: NG HOU T
IPC: G03F7/20
Filed: 2022-03-11
Abstract: A method of fabricating a multi-color display includes dispensing a first photo-curable fluid through apertures in a first mask into a first plurality of wells in a display. A first plurality of light emitting diodes are activated to illuminate and cure the first photo-curable fluid to form a first color conversion layer over each of the first plurality of light emitting diodes, and an uncured remainder of the first photo-curable fluid is removed. A second photo-curable fluid is dispensed through apertures in a second mask into a second plurality of wells in the display. A second plurality of light emitting diodes are activated to illuminate and cure the second photo-curable fluid to form a second color conversion layer over each of the second plurality of light emitting diodes. An uncured remainder of the second photo-curable fluid is removed.
Patent TW-202239017-A (TW)
Inventor: HSIEH MIN-HSUN
IPC: H01L33/02
Filed: 2022-03-16
Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a contact layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The contact layer includes an oxygen element (O) and a fifth metal element, and is located on the second portion. The first metal element-containing structure is located on the contact layer. The contact layer physically contacts the first metal element-containing structure and the first semiconductor layer.
Patent TW-202239685-A (TW)
Title: 機器人配置方法、裝置、控制終端和倉儲系統
Inventor: Zhou hong-xia
IPC: B65G1/137
Filed: 2022-03-24
Abstract: 一種機器人配置方法、裝置、控制終端和倉儲系統，方法經由確定目標倉庫中倉儲機器人的數量，進而根據倉儲機器人的數量，確定目標倉庫的每個工作站對應的倉儲機器人的數量上限值，從而，基於數量上限值，控制每個工作站對應的一定數量的倉儲機器人搬運料箱至工作站，數量小於或等於數量上限值，實現了對倉庫工作站中倉儲機器人數量的配置，減少工作站中出現的機器人過多或過少的情況，解決出現的機器人過多，導致的工作站內擁堵，機器人等待時間過長、資源浪費，以及出現的機器人過少，導致的工作人員無貨可揀，工作站揀貨效率降低的問題。
Patent TW-202303748-A (TW)
Title: Substrate processing apparatus and substrate processing method
Inventor: TOMURA MAJU
IPC: C23C14/00
Filed: 2022-04-25
Abstract: In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus comprises: a chamber; a substrate support disposed in the chamber; a gas supply disposed in the chamber and connected to a supply source of reaction gas containing HF gas and C
         x H
         y F
         z gas (where x and z are integers equal to or greater than 1 and y is an integer equal to or greater than 0); and a plasma-generator configured to form a plasma from the reaction gas supplied to the chamber from the gas supply, wherein at least a portion of the chamber exposed to the plasma is made of a conductive silicon-containing material.
Patent TW-202247540-A (TW)
Title: Electrical wire connector and wire-to-board connector
Inventor: KOBAYASHI HIROKI
IPC: H01R13/11
Filed: 2022-05-13
Abstract: A terminal connected to the end of an electrical wire, including: a main body portion connected to a core wire of the electrical wire and a contacting portion connected to the front end of the main body portion having a portion with a U-shaped cross-section that connects to a mating terminal, wherein the contacting portion includes: an upper plate portion connected to the main body portion, a lower plate portion that is parallel with the upper plate portion, a side plate portion that connects one of either the left or right edges of the upper plate portion and the lower plate portion, a tip mating recessed portion demarcated on three sides by the upper plate portion, the lower plate portion, and the side plate portion, an inclined protruding piece that extends diagonally downward from the back end of the lower plate portion, and a middle plate portion that extends between the inclined protruding piece and the upper plate portion in the width direction of the contacting portion.
Patent TW-202306437-A (TW)
Title: Multi-sectional plasma confinement ring structure
Inventor: MARAKHTANOV ALEXEI
IPC: H05H1/34
Filed: 2022-05-20
Abstract: A confinement ring for use in a plasma processing chamber includes an upper horizontal section, an upper vertical section, a mid-section, a lower vertical section, a lower horizontal section and a vertical extension. The upper horizontal section extends between an inner upper radius and a first outer radius of the confinement ring. The mid-section extends between inner upper radius and a second outer radius of the confinement ring. The lower horizontal section extends between an inner lower radius and the second outer radius, and the vertical extension extends down from the lower horizontal section proximate to the inner lower radius. The upper vertical section extends between the upper horizontal section and the mid-section proximate to the inner upper radius, and the lower vertical section extends between the mid-section and the lower horizontal section proximate to the second outer radius.