baber/WOPTO huggingface dataset:
Patent TW-324709-B (TW)
Title: Crystallization of p-xylene from high purity p-xylene feeds
Inventor: ALEXANDER D FREMUTH
IPC: C07B61/00
Filed: 1995-03-30
Granted: 1998-01-11
Abstract: A crystallization method for recovering p-xylene from a feed rich in p-xylene, which comprises: contacting the feed rich in p-xylene at a single temperature crystallization production stage, in which the temperature range is from about -17.8 degree C to about 10 degree C (about 0 degree F to about 50 degree F); recovering a slurry containing the p-xylene crystals from the production stage, and transporting the slurry from the production stage to a first separation device to form a filtration cake, and washing the filtration cake with p-xylene; transporting the filtration cake from the first separation device to a first melting drum to form a p-xylene product and recover the p-xylene product; filtering out a filtrate from the recovering part of the first separation device to the production stage, and transporting the remaining filtrate from the first separation device to a scavenger stage, in which the above procedure is operated at a temperature lower than the temperature of the production stage, in which the temperature range of the scavenger stage is from about -28.9 degree C to about -1.1 degree C (about -20 degree F to about 30 degree F); in which the recovered slurry contains the p-xylene crystals from the scavenger stage; transporting the slurry from the scavenger device to the second separation device to form a filtration cake; transporting this filtration cake from the second separation device to a second melting drum to form p-xylene crystals, and recovering the p-xylene crystals to the production stage; filtering out filtrate from the recovering part of the second separation device to the scavenger stage, and recovering the remaining filtrate from the second separation device as the mother liquid, in which the feed rich in p-xylene comprises at least about 70 wt% of p-xylene.
Patent TW-412425-B (TW)
Title: Dentifrice composition having capsule particles
Inventor: OKAJIMA TAKAO
IPC: A61Q11/00
Filed: 1995-10-07
Granted: 2000-11-21
Abstract: The dentifrice composition includes capsule particles containing agar as a main component of a coat-forming substance and having an average particle size of from 0.3 to 3 mm, and vehicles for use in oral cavity. It may further contain nonionic surfactants and/or water-insoluble abrasive granules as desired.
Patent TW-301804-B (TW)
Title: The Ohm electrode and its forming method for compound semiconductor
Inventor: SUZUKI KINGO
IPC: H01L21/28
Filed: 1995-10-18
Granted: 1997-04-01
Abstract: An Ohm electrode of n type III-V compound semiconductor, formed by alloy of Au, Si and Ni, with the following features: Coat Au-Si-Ni film on n type III-V compound semiconductor substrate and proceed electrode process, then put the compound semiconductor in non-oxygen atmosphere for high and low temp. heat treatment.
Patent TW-327658-B (TW)
Title: Ductile weft in longitudinal and transversal directions and its manufacturing process
Inventor: LEU YI-SHYAN
IPC: D06C3/00
Filed: 1996-02-01
Granted: 1998-03-01
Abstract: A kind of manufacturing process for ductile weft in both longitudinal and transversal directions which has the following weaving processes: a) the polyester, 60 percent in total, which is used as the face woof; use another polyester, 30 percent in total, which is used as the base woof; and the spandex, 10 percent in total, which is used as the swathe woof b) complect the face woof, base woof and the swathe woof altogether as the raw material c) send the material into the hardening machine for hardening, the temperature is as high as 140 degree in Celsius and in a sending speed of 15 feet per minute d) send the material into the dyeing procedure, the temperature of dyeing is about 125 to 130 degree in Celsius and takes 25 minutes e) reduce the temperature to 85 degree in Celsius and neutralize it with glacial acetic acid, and be washed, dehydrated f) replenish the napping oil into the weft g) after baking the material, it will go through the process of combing and shearing h) send the material into a double-heated shaking machine, one is the dry hot air in 120 degree of Celsius, another one is the steam in 105 degree of Celsius, the process will go shaking for 20 to 25 minutes i) send the material into the hardening machine again, the hardening temperature is 160 degree of Celsius; the speed is set to 10 to 15 feet per minute.
Patent TW-326102-B (TW)
Title: Card comprising an electronic unit and method for manufacturing such a card
Inventor: JUAN ALAIN
IPC: G06K19/077
Filed: 1996-12-04
Granted: 1998-02-01
Abstract: A method of manufacturing a card, which comprises the steps of: (I) supplying a first planar layer (30) of a hot melt material; (II) applying at least one electronic unit (32) to the first layer, the unit comprising an integrated circuit (4) and electronic junction pads (34, 36) electrically connected to the integrated circuit, and a conductive material coil at least forming a winding (14), both ends of which are separately connected to the two electronic junction pads (34, 36); the integrated circuit being surrounded by a module (38) and its contour having a symmetry relative to the median plane (40) of the module; (III) applying a planar layer (42) of a second hot melt material on the first layer on the electronic unit and the coil; (IV) applying a hot press mechanism on the first and the second planar layer sufficient to soften the first and second layer for combining with each other and encompassing the electronic unit and the coil in the first and second layer while maintaining the relative external surface (46, 48) flat.
Patent TW-326559-B (TW)
Title: The manufacturing method for semiconductor device
Inventor: MIYAMOTO TOSHIO
IPC: H01L25/10
Filed: 1996-12-27
Granted: 1998-02-11
Abstract: A manufacturing method for semiconductor device includes the following processes: (a) Form lead, on the surface of conductive layer of tape carrier, with one end jutted from mounting hole and the other end connected with through hole, after forming mounting hole and thorough hole on tape carrier; (b) Form multiple tape carrier packages (TCP) by sealing the semiconductor chip with resin, after bond the inner lead with pad of semiconductor chip; (c) Form stacked TCP by matching and stacking multiple TCPs vertically on through hole, then form conduct layer inside the through hole, and electrical connection within the through hole; (d) Form outer lead of stacked TCP at one end of through hole.
Patent TW-332320-B (TW)
Title: A low temperature deposited hydrogenated amorphous silicon nitride and amorphous silicon hydrogen composite passivation layer, the deposition method and the semiconductor
Inventor: LIAW WENN-SHIANN
IPC: H01L31/0216
Filed: 1997-01-03
Granted: 1998-05-21
Abstract: A method for a low temperature deposited hydrogenated amorphous silicon nitride and amorphous silicon hydrogen composite passivation layer which comprises a hydrogenated amorphous silicon nitride film is formed over a semiconductor device, then a very thin layer (.6.4 nm) of amorphous silicon hydrogen film is formed by PECVD over the amorphous silicon nitride film.A low temperature at 15~150 DEG C is deposited.
Patent TW-386210-B (TW)
Title: Improved memory manager to allow non-volatile memory to be used to supplement main memory
Inventor: HASBUN ROBERT N
IPC: G06F12/06
Filed: 1997-01-25
Granted: 2000-04-01
Abstract: Apparatus and a method including circuitry for detecting attempts to write to non-volatile memory array during execution of an application from the non-volatile memory array, a computer-implemented process responding to the detection of an attempt to write to non-volatile memory-array to read that portion of the application surrounding the portion to which the attempt write to the non-volatile memory array is addressed and to write that portion of the application to main memory, and a computer -implemented process for revising the data structures storing information regarding the portion of the application written to main memory so that the portion of the application can be read, written, and executed from main memory.
Patent TW-407216-B (TW)
Title: Liquid crystal display device and method of manufacturing backlighting light guide panel therefor
Inventor: HIRA YASUO
IPC: G02B6/00
Filed: 1997-01-31
Granted: 2000-10-01
Abstract: In a liquid crystal display device including a liquid crystal cell array, a light guide plate disposed on a rear surface of the liquid crystal cell array, and a light source disposed at a lateral side of the light guide plate, the light guide plate has a light incident surface on which light rays emitted from the light source are incident, a light-transmissive surface through which the incident light rays exit the light guide plate toward the liquid crystal cell array, and a plurality of reflecting slant portions for directing the incident light rays toward the light-transmissive surface, wherein the reflecting slant portions are constituted by a corresponding number of small convexes or alternatively by a corresponding number of small convexes or alternatively by a corresponding number of small concaves. A backlighting light guide panel for the liquid crystal display device can be implemented inexpensively by a small number of parts with enhanced luminance through a reduced number of processing steps when compared with conventional ones.
Patent TW-338218-B (TW)
Title: Randomly enlarge or contract control apparatus for transferring VGA into TV
Inventor: LIN LIH-DER
IPC: H04N5/91
Filed: 1997-02-27
Granted: 1998-08-11
Abstract: A randomly enlarging or contracting control apparatus for converting VGA into TV, it is by converting non-interlaced VGA display screen signal into interlaced TV display screen signal. And within the converting process, based on the analysis desired by TV display screen, and after properly enlarge and contract control, to send interlaced TV display screen signal to TV display screen. The control apparatus includes: A/D converter for converting the R.G. B current signal of VGA display into digital VGA input data. The contract device in vertical direction is used to screen the data of VGA display horizontal scanning line, to eliminate data of VGA display horizontal scanning line. Memory, for storing the VGA data sent from contract device in vertical direction. The enlarging device at vertical direction, used to screen VGA data inside memory, repeating the specified data of VGA display horizontal scanning line, to enlarge the VGA display data returned on TV. D/A converter for converting digital data back to R.G. B current signal, and covert the analogue signal backs to TV signal format to display on TV monitor. The contract device at horizontal direction can generate VGA timing signal supplying to A/D converter. And by adjusting the width of VGA timing signal to contract VGA input signal at horizontal direction. The enlarging device at horizontal direction, can generate TV timing signal supplying to A/D converter, and by adjusting the width of TV timing signal to enlarge TV output signal at horizontal direction.
Patent TW-356572-B (TW)
Title: Method for forming metal wiring of semiconductor devices
Inventor: KIM HEON-DO
IPC: C23C14/00
Filed: 1997-05-20
Granted: 1999-04-21
Abstract: A kind of metal wiring method for forming a semiconductor device, it comprises the step(s): providing a semiconductor substrate; forming an interlayer insulating film provided with a contact hole on the semiconductor substrate; forming a first high melting-point metal film over the resulting structure obtained after the formation of the interlayer insulating film, forming a multilayer over the first high melting-point metal film, the multilayer is formed from high melting-point metal nitride film, formed from a high melting-point metal oxide film and a second high melting-point metal nitride film; forming a second high melting-point metal film over the second high melting-point metal nitride film; and forming a metal wiring on the second high melting-point metal film.
Patent TW-333628-B (TW)
Title: Method, processor and computer system for interrupt control used for different lengths of commands that the interrupt command can be correctly executed.
Inventor: TANAKA KAZUHIKO
IPC: G06F9/06
Filed: 1997-06-19
Granted: 1998-06-11
Abstract: A kind of interrupt control method which is a processor used to execute at least one command in the divergent command bus of tardy clusters and the interrupt control method for processing a plurality of commands read from the divergent commands stored in the memory with variable length. The features are: - when interrupt generates, stores the command in the address after the command to be executed in the tardy cluster - when complete the interrupt command, read in sequence the commands from the address of the interrupt command - diverse to the address of the initial read-out and execute the first command - the read-out address after the second one, if the address is the assigned command address, diverse to the address and execute the command.
Patent TW-413940-B (TW)
Title: Manufacturing method of integrated circuit capacitance device
Inventor: LIN CHI-HUEI
IPC: H01L27/108
Filed: 1998-01-07
Granted: 2000-12-01
Abstract: A manufacturing method of integrated circuit capacitance device, which includes following steps: providing a substrate, forming plural field oxide layers, plural word lines, plural diffusion regions and plural bit lines on substrate. Covering a planarization layer and an etching stop layer. Forming plural doped polysilicon plugs, and contacting the bottom of plugs with plural diffusion regions. Depositing a capacitor layer and a reaction layer. Defining capacitor layer and reaction layer to produce plural capacitor regions, and the top end of plural plugs are exposed on the bottom of plural capacitor regions. Depositing a bottom electrode plate layer to cover plural capacitor regions and the reaction layer, to produce combination reaction on the overlapping part of reaction layer and bottom electrode plate layer, and reacts further to be a compound layer. Proceeding selectively etching step to remove the compound layer. And depending on the requirement of design to remove or preserve the capacitor layer. Continuously depositing a capacitance dielectric layer and a upper electrode plate layer on substrate, to form the integrated circuit capacitance device.
Patent TW-396601-B (TW)
Title: Semiconductor device and manufacturing method
Inventor: NAGAI YUKIHIRO
IPC: H01L21/822
Filed: 1998-01-14
Granted: 2000-07-01
Abstract: This is a semiconductor device that does not increase the number of manufacturing processes and its methods. The capacitor in the logic circuit region assures the desired capacitance and reduces the occupied area. The first electrode (11) of the capacitor is formed in the logic circuit region. A dielectric layer over the first electrode (11) is formed in the first interlayer isolation layer (15). The second electrode (20) is formed over the first interlayer isolation layer (15). The second dielectric layer over the second electrode (20) is formed in the second interlayer isolation layer (22). The third electrode (40) is formed over the second interlayer isolation layer (22). The first electrode (11) and the third electrode (40) in the first connecting region (43); the third connecting region (45) is connected to the wire (35) via the opening (41) and (39), respectively.
Patent TW-390034-B (TW)
Title: Method and system for improving a transistor model
Inventor: EKLUND ANDERS
IPC: G06F30/367
Filed: 1998-02-03
Granted: 2000-05-11
Abstract: The present invention relates to an improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge (qb) which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.
Patent TW-420772-B (TW)
Title: A cache coherence for lazy entry consistency in lockup-free caches
Inventor: BAYLOR SANDRA JOHNSON
IPC: G06F12/08
Filed: 1998-03-06
Granted: 2001-02-01
Abstract: A method of reducing falses sharing in a shared memory system by enabling two caches to modify the same line at the same time. More specifically, with this invention a lock assoiciated with a segment of shared memory is acquired, where the segment will then be used exclusively by processor of the shared memory system that has acquired the lock. For each line of the segment, an invalidation request is sent to a number of caches of the system. When a cache receives the invalidation request, it invalidates each line of the segment that is in the cache. When each line of the segment is invalidated, an invalidation acknowledgement is sent to the global directory. For each line of the segment that has been updated or modified, the update data is written back to main memory. Then, an acquire signal is sent to the requesting processor which then has exclusive use of the segment.
Patent TW-368408-B (TW)
Title: Absorbent interlabial device having pleated structure
Inventor: OSBORN THOMAS WARD III
IPC: A61F13/15
Filed: 1998-03-18
Granted: 1999-09-01
Abstract: Absorbent devices, and more particularly absorbent devices that are worn interlabially by female wearers for catamenial purposes, incontinence protection, or both, are disclosed. The absorbent interlabial device of the present invention comprises a main absorbent portion comprising a pleated structure and a pair of flexible extensions joined to the main absorbent portion. The main absorbent portion comprises an upper portion, and a lower portion opposed to the upper portion. In use, the upper portion is positioned furthest inward into the space between the wearer's labia majora. The pair of flexible extensions extends downwardly and laterally outward from the upper portion of the main absorbent portion, and preferably is capable of maintaining contact with the inside surfaces of the wearer's labia majora when the wearer's body goes through a range of motions, including squatting. Additionally, the flexible extensions are preferably capable of covering the fingertips of the wearer as the absorbent device is inserted into the interlabial space.
Patent TW-375808-B (TW)
Title: Process for fabricating copper metal interconnection
Inventor: LIU CHUNG-SHI
IPC: H01L21/768
Filed: 1998-03-23
Granted: 1999-12-01
Abstract: A process for fabricating copper interconnection comprising the steps of first providing a dielectric for copper interconnection having a plurality of openings on its surface as via contact; coating the dielectric with a layer of titanium nitride and a layer of copper onto the surface of titanium nitride; implanting the germanium onto the contact surface of titanium nitride layer and copper layer by ion implant to form a layer of copper germanium by the reaction of copper and germanium; the titanium nitride acts as diffusion barrier for copper metal interconnection; the copper germanium works as the adhesion layer for the copper metal interconnection; in addition, germanium can be implanted vertically or tiltedly at an angle by ion implant method onto contact surface of titanium nitride and copper metal interconnection. As such, germanium can stay away from contact window and bottom of opening during ion implant that tends to cause damage to circuit elements.
Patent TW-430620-B (TW)
Title: Industrial vehicle with power steering apparatus and steering wheel angle correction device
Inventor: ISHIKAWA KAZUO
IPC: B62D6/00
Filed: 1998-04-14
Granted: 2001-04-21
Abstract: An industrial vehicle has rear wheels (119) steered by a hydraulic power steering apparatus in accordance with a rotation of a steering wheel (102). The vehicle includes an electromagnetic switching valve (122) that corrects discrepancies between an angular position of the steering wheel (102) and a wheel angle of the rear wheels (119) by racing the steering wheel (102) when the discrepancy exceeds a predetermined value. The vehicle further includes a central processing unit (141) that suppresses the operation of the switching valve (122) under certain conditions.
Patent TW-371682-B (TW)
Title: A process for producing polyester fiber having improved dyeability, elongation and strength, and polyester fiber therefrom
Inventor: CHEN SHIAN-JANG
IPC: D06M13/148
Filed: 1998-06-04
Granted: 1999-10-11
Abstract: The invention describes a novel method for producing polyester with improved dyeability, elongation and strength, in which a mixture of PTA, alkyl ester, and C2-6 alkyl glycol, added with 2-methyl-1,3-propanediol for polymerization, from the composition, the polyester fiber can be obtained; the invention further relates to the process to produce such polyester.
Patent TW-408273-B (TW)
Title: Method and arrangement for finding information
Inventor: ARKKO JARI
IPC: H04W4/029
Filed: 1998-07-30
Granted: 2000-10-11
Abstract: The present invention relates to a method and an arrangement for finding information in a communications system comprising a circuit switched network, a packet switched network and a link therebetween. A user related location information is obtained by the circuit switched network and the packet switched network is subsequently utilized using said location information for finding the desired information. The invention relates further to a mobile station to be used in accordance with the invention.
Patent TW-509678-B (TW)
Title: Method for the synthesis of quinoline derivatives
Inventor: SISKO JOSEPH
IPC: A61P11/06
Filed: 1998-09-29
Granted: 2002-11-11
Abstract: This invention relates to novel intermediates and processes for preparing pharmaceutically active quinoline compounds, including (-)-(S)-N-(Α-ethylbenzyl)-3-hydroxy-2-phenylquinoline-4-carboxamide.
Patent TW-I227262-B (TW)
Title: Manufacturing method of decorative material
Inventor: KANKI MASAHIRO
IPC: C09D11/033
Filed: 1997-09-04
Granted: 2005-02-01
Abstract: This invention relates to a durable gravure ink composed of a pigment with high weather resistance, a pigment with high alkali resistance, and a binder with high weather resistance and high alkali resistance, and a technique for producing a decorative material using this ink. According to this invention, a decorative material having a pattern layer excellent in both of weather resistance and alkali resistance is provided.
Patent TW-451432-B (TW)
Title: Improved control of critical dimensions
Inventor: GRASSMANN ANDREAS
IPC: G03F7/20
Filed: 1999-03-25
Granted: 2001-08-21
Abstract: A lithographic system with improved control of critical dimensions (CD). The lithographic system includes a detector for determining the amount of energy absorbed by the photoresist. This enables the lithographic system to expose each field with the required exposure dose, thus reducing variations in CD.