Patent SG-11201806578X-A (SG)
Title: Self-alignment of metal and via using selective deposition
Inventor: SMITH JEFFREY
IPC: H01L21/768
Filed: 2017-02-02
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization 111111110111101110101011111010111110111011100110111111011111111101111011111 International Bureau ... ..... ..Yi j (10) International Publication Number (43) International Publication Date ..... ...r .....1 WO 2017/136577 Al 10 August 2017(10.08.2017) WIPO I PCT (51) International Patent Classification: (74) Agent: MATHER, Joshua D.; Tokyo Electron U.S. Hold- HO1L 21/768 (2006.01) H01L 21/3205 (2006.01) ings, Inc., 2400 Grove Boulevard, Austin, Texas 78741 (US). (21) International Application Number: PCT/US2017/016253 (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, 2 February 2017 (02.02.2017) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (25) Filing Language: English DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (26) Publication Language: English KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, (30) Priority Data: MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, 62/290,282 2 February 2016 (02.02.2016) US NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (71) Applicant: TOKYO ELECTRON LIMITED [JP/JP]; TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, ZA, ZM, ZW. Tokyo 107-6325 (JP). (84) Designated States (unless otherwise indicated, for every (71) Applicant (for JP only): TOKYO ELECTRON U.S. kind of regional protection available): ARIPO (BW, GH, HOLDINGS, INC. [US/US]; 2400 Grove Boulevard, Aus- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, tin, Texas 78741 (US). TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (72) Inventors: SMITH, 12 Wild Flower Way, Clifton TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, Jeffrey; Park New York 12065 (US). DEVILLIERS, Anton J.; DK, , EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, 734 Tanner Rd., Clifton Park, New York 12065 (US). LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CL CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] Title: SELF-ALIGNMENT OF METAL AND VIA USING SELECTIVE DEPOSITION = (54) 105 (57) : Techniques herein include methods of patterning substrates such as for back end of line (BEOL) metallization processes. Techniques herein enable fully self-aligned vias and lines. Processes herein include using selective deposition, protective films and combination etch masks for accurately patterning a substrate. i , .. , }141 135 In a substrate having uncovered portions of metal material and dielectric material, the dielectric material is grown upwardly without covering metal material. This raised dielectric material is conformally protected and used in subsequent pattern- ing step to align via and line placement. Such combinations mitigate overlay errors. 130 1-1 111 N IN ir) cr) 1-1 FIG. 7A IN 1-1 0 ei 0 WO 2017/136577 Al MIDEDIM011111 11111111ME3011110111110011111111111111011110111111 Published: — before the expiration of the time limit for amending the — with international search report (Art. 21(3)) claims and to be republished in amendments (Rule 48.2(h)) the event of receipt of