Patent SG-11201802577P-A (SG)
Title: Process for the generation of thin inorganic films
Inventor: ADERMANN TORBEN
IPC: C23C16/455
Filed: 2016-11-18
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -' Organization International Bureau rest0) (43) International Publication Date ..... ..sr ,„,„.1 1 June 2017 (01.06.2017) WIPO I PCT (10) WO International 111111111111311111111111111111111111111111111111111111111111111111111311111111111111111 2017/089230 Publication Number Al (51) International Patent Classification: (74) Agent: BASF IP ASSOCIATION; C23C 16/18 (2006.01) C07F 15/06 (2006.01) 67056 Ludwigshafen (DE). CO7F 13/00 (2006.01) C23C 16/455 (2006.01) CO7F 15/04 (2006.01) (81) Designated States (unless kind of national protection (21) International Application Number: AO, AT, AU, AZ, BA, BB, PCT/EP2016/078099 BZ, CA, CH, CL, CN, CO, DO, DZ, EC, EE, EG, ES, (22) International Filing Date: HN, HR, HU, ID, IL, IN, 18 November 2016 (18.11.2016) KW, KZ, LA, LC, LK, LR, (25) Filing Language: English MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, (26) Publication Language: English SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, (30) Priority Data: TN, TR, TT, TZ, UA, UG, 15196031.7 24 November 2015 (24.11.2015) EP ZW. (71) Applicant: BASF SE [DE/DE]; Carl-Bosch-Str. 38, 67056 (84) Designated States (unless Ludwigshafen am Rhein (DE). kind of regional protection GM, KE, LR, LS, MW, (72) Inventors: ADERMANN, Torben; Endemannstrasse 13, TZ, UG, ZM, ZW), Eurasian 69115 Heidelberg (DE). LOEFFLER, Daniel; Heinrich TJ, TM), European (AL, Heine Str. 2b, 67134 Birkenheide (DE). LIMBURG, Car- DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, olin; Zypressenstrasse 3a, 68199 Mannheim (DE). LV, MC, MK, MT, NL, NO, Basf Se, ZRX - C6, otherwise indicated, for every available): AE, AG, AL, AM, BG, BH, BN, BR, BW, BY, CR, CU, CZ, DE, DJ, DK, DM, FI, GB, GD, GE, GH, GM, GT, IR, IS, JP, KE, KG, KN, KP, KR, LS, LU, LY, MA, MD, ME, PT, QA, RO, RS, RU, RW, SA, US, UZ, VC, VN, ZA, ZM, otherwise indicated, for every available): ARIPO (BW, GH, MZ, NA, RW, SD, SL, ST, SZ, (AM, AZ, BY, KG, KZ, RU, AT, BE, BG, CH, CY, CZ, DE, PL, PT, RO, RS, SE, SI, SK, ABELS, Falko; Gutenbergstrasse 2a, 67354 Roemerberg SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Hagen; Ernst-Kunz-Strasse 33, 67071 (DE). WILMER, GW, KM, ML, MR, NE, SN, TD, TG). Ludwigshafen GILL, Monica; 20 Waterview (DE). Published: Heeights, Apt. 12, Charlottetown, Prince Edward Island CIA 9J7 (CA). GRIFFITHS, Matthew; 10 Kluane Ridge, — with international search report (Art 21(3)) K2M 1Z6 BARRY, 38 Ella Ottawa, ON, (CA). Sean; St., Ottawa, ON, K1S 2S4 (CA). Title: PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS (54) 1 R i ,-, .4t ----M L= R 2 --- - i Al i \ o M ei ct\ ce o t - - (57) : The present L m invention is the field of processes in Xn (I) for the generation of thin n 3 rx --, N inorganic %4 R films on substrates, in particular 1-1 o atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general foiinula (I) el into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid 0 substrate, wherein R I , R, R 2 3 , and R 4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 P. wherein the molecular weight of the compound of general fonnula (I) is up to 1000 g/mol.