baber/WOPTO huggingface dataset:
Patent JP-H01284366-A (JP)
Title: Method of coating adhesive agent
Inventor: KOBAYASHI TSUNETOSHI
IPC: B05C5/00
Filed: 1988-05-12
Abstract: PURPOSE:To absorb liquid sags to adherends and to prevent the generation of stained articles by rotating adhesive agent discharge nozzles which rotate and the adherends which are imposed on a rotating belt having partially nearly the same curvature in synchronization for a prescribed period of time. CONSTITUTION:Plural pieces of the adhesive agent discharge nozzles 3 which are rotated around a shaft 2 are installed and are so constituted that the adhesive agent from an adhesive agent tank 1 can be discharged at an arbitrary point to the discharge nozzles 3. The rotating belt 4 moving in tune with the nozzles 3 is installed along the rotating direction of the nozzles and the adherends 5 are imposed on the belt 4. The adhesive agent 6 is discharged from the nozzles 3 at the tuning point 7 with the nozzles 3 and the nozzles 3 and the adherends 5 are moved as they are in synchronization. The liquid sags from the nozzles 3 are, therefore, absorbed in the adherends. The generation of the stained articles by the liquid sags is prevented by this constitution.
Patent JP-H09297638-A (JP)
Title: Method and device for processing information
Inventor: SANBE HIDEO
IPC: G06F3/00
Filed: 1996-05-08
Abstract: PROBLEM TO BE SOLVED: To provide a method and a device for processing information with which access to a display device connected to an information processor can be easily switched to the other display device. SOLUTION: Concerning the information processing method of the information processor provided with almost the same types of 1st and 2nd display devices, it is discriminated whether the 1st display device is connected or not (S405 and S406) and when it is connected, a 1st display device driver for accessing the 1st display device is integrated with a prescribed operating system (S412). Then, based on the integrated 1st display device driver, the 1st display device is accessed.
Patent JP-S593964-A (JP)
Title: Semiconductor integrated circuit
Inventor: NISHIZAWA JIYUNICHI
IPC: H01L27/06
Filed: 1982-06-29
Abstract: PURPOSE:To obtain an MOSSIT which can be changed into shorter channel one, has a large conversion conductance, and is strong to process variation and an integrated circuit using the MOSSIT by a method wherein insulated gate type static induction transistors wherein the depth of high density source regions is formed shallower than the depth of distribution of the carrier in an inversion layer are included in drive transistors. CONSTITUTION:An n<+> source region 12 and an n<+> drain region 13 are formed extremely thin. The n<+> regions are formed to e.g. a thickness less than several 100Angstrom . The depth of a channel p<-> region 32 is approximately equal to an effective channel length Leff, but formed shorter than it. Since the source and drain regions 12 and 13 are formed extremely shallow, the regions do not contact the p<+> region of a substrate, and the impurity density of the p<+> substrate can be enhanced without considering tunnel current and breakdown voltage. The source and drain regions are distant from the p<+> substrate, therefore the capacitances thereof can be extremely reduced. An n-region 23 is an ion implanted region to form the Tr2 into a depletion mode transistor, and the resistance value of the Tr2 is selected at the value approximately 1/10 compared with the resistance value at the time of conduction of the Tr1.