baber/WOPTO huggingface dataset:
Patent TW-432216-B (TW)
Title: General-purpose test equipment of flat panel display
Inventor: YANG JEN-FANG
IPC: G01R1/00
Filed: 1999-05-17
Granted: 2001-05-01
Abstract: This invention is about a test equipment used to test electric characteristic of device inside the flat panel display. The test equipment includes plural probes used to contact plural pads of display, in which the number of pads is smaller or equal to the number of probes. This test apparatus sends plural electronic signals to the display in order to test electric characteristic of device inside the flat panel display, in which the separation distance in between two arbitrarily adjacent probes is smaller than the width of any one pad. Signal generation apparatus is used to generate the signal sent to plural pads through plural probes by contacting plural pads aforementioned. Switching apparatus is used to provide the conducting path between signal generation apparatus and plural pads of display.
Patent TW-422925-B (TW)
Title: A method of testing the color-mixing error of liquid crystal monitor
Inventor: YUAN BIN
IPC: G09G3/00
Filed: 1999-05-24
Granted: 2001-02-21
Abstract: A method of testing the color-mixing error of liquid crystal monitor (LCM), wherein the interferences of three primary colors (red, green, blue) are used for testing, and a color picture is shown on the liquid crystal monitor. Red, green, blue and white are set up on four ends of two equally divided diagonal lines based on the color picture, and then each color gradually extends in the diagonal direction and the intensity is gradually attenuated. Interference occurs when they meet each other to generate curved color band streaks, so that the color-mixing error of liquid crystal monitor can be judged from the curved color band streaks generated by the interference.
Patent TW-440780-B (TW)
Title: Computer implemented system and method for high level controlled searching through a problem space
Inventor: CRAWFORD JAMES M JR
IPC: G06Q10/06
Filed: 1999-06-30
Granted: 2001-06-16
Abstract: A system and method for searching a problem space. In an exemplary application, the search constructs a plan associated with a business enterprise and the problem space is a model of the enterprise. The search is divided into subsearches. Each subsearch is performed by a subsearch process having its own goal data, termination data, problem data, problem selection process, move process, and script. The script of a subsearch determines whether the current state of the search shall be advanced by a move of that subsearch or by another subsearch.
Patent TW-449831-B (TW)
Title: MOSFET with double ESD protection
Inventor: YANG JIUN-JE
IPC: H01L21/3215
Filed: 1999-06-01
Granted: 2001-08-11
Abstract: The present invention discloses a MOSFET structure with an improved double ESD protection. The transistor includes a first ESD implant region formed underneath the source region and the drain region of the transistor. The first ESD implant region has the same impurity type as the source region and the drain region. Further, a second ESD implant region is formed underneath the first ESD implant region. The second ESD implant region also is spaced apart vertically from the first ESD implant. The second ESD implant region has an impurity type opposite to that of said first ESD implant region.
Patent TW-495385-B (TW)
Title: Catalyst for hydrogenation treatment and method for hydrogenation treatment of heavy oil
Inventor: IWAMOTO RYUICHIRO
IPC: C10G45/06
Filed: 1999-06-08
Granted: 2002-07-21
Abstract: The present invention relates to a catalyst for hydrogenation treatment in which Mo-Ni, Mo-Co or the like is supported on an alumina-type carrier, and a method for hydrogenation treatment of heavy oil using the same. More specifically, it relates to the catalyst showing a specific X-ray diffraction pattern, and a method for hydrogenation treatment of heavy oil using the same.
Patent TW-410318-B (TW)
Title: Variable trip fault indicator
Inventor: BANTING JOHN FREDERICK
IPC: H02H3/05
Filed: 1999-07-26
Granted: 2000-11-01
Abstract: In a power distribution system, a reliable, accurate, and energy efficient fault circuit indicator is provided through a microcomputer-based fault current indicator design. First, reliability is improved inherently because the microcomputer, and the software embedded therein, replace the functionality of numerous discrete, less reliable electronic components found in prior designs. Second, the embedded software is capable of placing the fault current indicator in one of a number of energy conservation states, without compromising the fault current indicator's ability to provide information relating to the occurrence of a fault. Finally, greater fault current indication accuracy is achieved by detecting excessive line current, followed by a significant drop in line voltage.
Patent TW-429506-B (TW)
Title: Wafer feeding/retracting device for electron gun evaporation process
Inventor: HUNG SHENG-FENG
IPC: C23C14/56
Filed: 1999-08-12
Granted: 2001-04-11
Abstract: The present invention provides a wafer feeding/retracting device for conveniently employing the vacuum sucking pen for feeding the wafer into the clamp ring or retracting the wafer from the clamp ring. In which, the wafer feeding/retracting device comprises a central cylinder connected to the central portion of the upper surface of the base. The upper surface of the central cylinder has a groove and the central cylinder can pass a clamp ring that the clamp ring is used to load a wafer for electron gun evaporation process. Further, there is at least one peripheral cylinder connecting to the peripherals of the upper surface of the base, and the distance between at least one peripheral cylinder and the central cylinder is larger than the width of the clamp ring and at least one peripheral cylinder is higher than the central cylinder.
Patent TW-495608-B (TW)
Title: Optical-based sensing devices
Inventor: COLVIN ARTHUR E
IPC: G01N21/27
Filed: 1999-08-26
Granted: 2002-07-21
Abstract: An optical-based sensor for detecting the presence or amount of an analyte using both indicator and reference channels. The sensor has a sensor body with a source of radiation embedded therein. Radiation emitted by the source interacts with indicator membrane indicator molecules proximate the surface of the body. At least one optical characteristic of these indicator molecules varies with analyte concentration. For example, the level of fluorescence of fluorescent indicator molecules or the amount of light absorbed by light-absorbing indicator molecules can vary as a function of analyte concentration. In addition, radiation emitted by the source also interacts with reference membrane indicator molecules proximate the surface of the body. Radiation (e.g., light) emitted or reflected by these indicator molecules enters and is internally reflected in the sensor body. Photosensitive elements within the sensor body generate both indicator channel and reference channel signals to provide an accurate indication of the concentration of the analyte. Preferred embodiments are totally self-contained and are sized and shaped for use in vivo in a human being. Such embodiments preferably include a power source, e.g. an inductor, which powers the source of radiation using external means, as well as a transmitter, e.g. an inductor, to transmit to external pickup means the signal representing the level of analyte.
Patent TW-I272385-B (TW)
Title: Gas identification system
Inventor: NAWA MOTOYUKI
IPC: G01N29/22
Filed: 1999-09-10
Granted: 2007-02-01
Abstract: A gas identification system comprises a passage (7), an ultrasonic instrument (8) including a pair of ultrasonic oscillators (17, 18) and arranged in the passage (7), a unit (10) for calculating the speed of sound in a gas flowing through the passage (7) based on the signal from the ultrasonic instrument (8), a section (12) for storing a predetermined speed of sound, and a comparator (11) for comparing the speed of sound calculated by the section (10) with the speed of sound stored in the section (12). The kind of gas that flows through the passage (7) is specified according to the results of comparison by the comparator (11).
Patent TW-484021-B (TW)
Title: A liquid crystal display device and a method of manufacture thereof, and a substrate and a method of manufacture thereof
Inventor: ACOSTA ELIZABETH JANE
IPC: G02F1/139
Filed: 1999-10-20
Granted: 2002-04-21
Abstract: An OCB device comprises upper and lower substrates, each provided with an alignment layer. A liquid crystal layer is provided between the substrates. The lower substrate has a low pre-tilt in regions A and C, so that an H-state is stable in these regions when no voltage is applied across the liquid crystal layer. Region B has a high pro-tilt on the lower substrate, so that a HAN state is stable in region B under zero applied voltage. When a voltage is applied across the liquid crystal layer, a V-state is formed at the interface between the HAN-state and the H-states. This V-state then displaces the H-states in regions A and C. The high pre-tilt region, region B, is acting as a nucleation region. The V-state forms at a lower applied voltage than if the nucleation region is not provided.
Patent TW-526220-B (TW)
Title: Poly(arylene ether) homopolymer compositions and methods of manufacture thereof
Inventor: LAU KREISLER S Y
IPC: H01L23/532
Filed: 1999-11-26
Granted: 2003-04-01
Abstract: Dielectric compositions encompassing one or more poly(arylene ether) polymers are provided. The dielectric compositions have the repetitive structural unit: where n=1 to 200, Y and Ar are each a divalent arylene radical, Y derived from bisphenol compounds of general formula HO-Y-OH, Ar derived from difluoro diarylacetylenes and/or ethynylated benzophenones of general formula F-Ar-F and Z is optionally hydrogen, a methyl group or derived from a monofluoro-benzophenone derivative of general formula Z-F. Such poly(arylene ether) polymers are employed with a variety of microelectronic devices, for example, integrated circuits and multichip modules.
Patent TW-594977-B (TW)
Title: Semiconductor integrated circuit device
Inventor: ITOH NOBUTAKA
IPC: H01L21/8244
Filed: 2000-01-28
Granted: 2004-06-21
Abstract: The present invention is related to semiconductor integrated circuit device, and is provided with the followings: the amplification MOSFET, which contains the sensing amplifier for amplifying the minute voltage (based on the information charges of the memory capacitor read from the bit line), the memory array of the row switch MOSFET for selecting the bit line; read/write portion containing the main amplifier for reading the memory information of the memory cell selected from the row switch; and the logic circuit portion for conducting data input/output operation with the read/write portion. The invention is featured with forming two capacitors, which have the first electrode and the second electrode, respectively, in a straight row and disposing them adjacent to the said read/write portion. In addition, the straight row circuit of two capacitors is connected in between the operation voltages of the read/write portion. The first electrode is composed of the screen electrode (having the same structure of the said memory capacitor), and the second electrode is formed by making common plural storage nodes of the said capacitor.
Patent TW-453055-B (TW)
Title: Transmission circuit of a radio frequency signal
Inventor: PHILIPPE PASCAL
IPC: H03M3/02
Filed: 2000-02-22
Granted: 2001-09-01
Abstract: The present invention relates to a transmission circuit of a radio frequency signal, intended to receive an input signal IN, comprising: a first frequency converter FC1, having reference inputs intended to receive at least one differential signal, and intended to deliver a signal having a predetermined frequency called intermediate frequency, and a phase representative of that of the input signal IN, and a second frequency converter FC2 intended to deliver the radio frequency signal resulting from a conversion of the frequency of the output signal of the first frequency converter FC1 into a tunable frequency. According to the invention, the first frequency converter FC1 comprises digital means for selecting one of the reference inputs as a function of the value of the input signal IN, for connecting it to the output of the first frequency converter FC1. The invention enables to simplify the structure and the embodiment of the transmission circuit considerably and to improve the performance thereof. Application: Transmission of signals in radiotelephones.
Patent TW-441138-B (TW)
Title: Heterostructure epitaxial LED die and the manufacturing method thereof
Inventor: NI GUO-YAN
IPC: H01L33/00
Filed: 2000-03-10
Granted: 2001-06-16
Abstract: A heterostructure epitaxial LED die and the manufacturing method thereof, mainly comprises filling high-transmittance material into the substrate of heterostructure epitaxial LED die, and the filling material is fixed, extended along and aligned to the side face and the active layer of the die, thereby a heterostructure epitaxial LED die containing light-transmitting path which extends to the side face of the die is formed, so that the light toward the substrate can be guided outward through a high-transmittance material to relatively increase the luminance of the emitted light.
Patent TW-555890-B (TW)
Title: A metallic anode oxidation treatment system utilizing a vibration flow agitation
Inventor: OMASA RYUSHIN
IPC: C25D11/04
Filed: 2000-03-27
Granted: 2003-10-01
Abstract: An object of the present invention is to provide an anode oxidation method with higher anodizing rate, less energy consumption and higher efficiency of oxide film formation and to provide an anodizing method in which an excellent, uniform oxide film can be obtained without burning of the metal body even if the metal body has a complicated profile. This invention provides a metal anode oxidation treatment system, which is characterized in that, in the metal anode oxidation process, (A) is disposed with vibration generation mechanism containing vibration motor; a vibration fluidly stirring mechanism coupled with the vibration generation mechanism and one-section or multiple-sections vibration vanes fixed with a vibration rod in the stirring tank vibrating at an amplitude from 0.5 to 3.0 mm and at a vibration frequency of 200 to 800 times per minute; an AC/DC shifter used to control the vibration motor vibrating arbitrarily at 10-500 Hz; and a vibration fluidly stirring device of the treatment bath of the vibration stress distribution mechanism disposed at the connection portion of the vibration generation mechanism and the vibration fluidly stirring mechanism, and (b) is to concurrently perform an aeration in the treatment bath by using air bubbles generated by a ceramic diffuser having a pore diameter of 10 to 400 mum and 30-40% of porosity.
Patent TW-479287-B (TW)
Title: Cleaning agent and method of manufacturing semiconductor device using such cleaning agent
Inventor: KANNO ITARU
IPC: C11D7/16
Filed: 2000-04-21
Granted: 2002-03-11
Abstract: Resist residue attached on a second interconnection layer and a filling metal film exposed on a silicon substrate is removed using a cleaning agent including condensed ammonium phosphate as a main constituent, urea or a modified component of urea as an adjuvant, and an acid. The hydrogen-ion concentration of the cleaning agent is at least 10-4 mol/l. Thus, if a part of the filling film filling the connection hole is exposed by borderless interconnection, the resist residue is surely removed without dissolving the filling layer or a conductive layer such as an interconnection layer in the cleaning agent.
Patent TW-478075-B (TW)
Title: Semiconductor device
Inventor: ASHIDA MOTOI
IPC: H01L21/8238
Filed: 2000-04-29
Granted: 2002-03-01
Abstract: A driver transistor including a gate electrode is formed on the surface of a well of a silicon substrate. A silicon oxide film and a silicon nitride film are formed to cover the driver transistor. An interlayer insulator film is formed on the silicon nitride film. A contact hole is arranged to planarly overlap with at least the gate electrode. Thus, a semiconductor device capable of performing desired operations and reducing a memory cell area is obtained.
Patent TW-I285634-B (TW)
Title: Indole derivatives
Inventor: ZISAPEL NAVA
IPC: A61Q19/00
Filed: 2000-05-31
Granted: 2007-08-21
Abstract: The invention relates to 1-(R1)-2-(R2)-3-(Y-X-NH-A- or Z-A-)-4,5,6,7-(R)0-4- indoles, and their acid addition salts where the compounds are basic, wherein A is C 1-4 alkylene, X is > CH2, > C=O or > C=S, and the other symbols have various defined values, and to pharmaceutical, skin-protective and cosmetic compositions which comprise them.
Patent TW-451394-B (TW)
Title: Method for forming a diffusion barrier layer
Inventor: CHANG TING-CHANG
IPC: H01L21/76
Filed: 2000-06-14
Granted: 2001-08-21
Abstract: The present invention provides a method for forming a stacked diffusion barrier layer on the surface of a semiconductor chip. The method comprises first forming a TiN layer on the semiconductor chip; next, performing a PECVD process to form an amorphous Α-Si layer on the TiN layer; then, applying a WF6 gas to proceed a silicon reduction reaction with the amorphous Α-Si layer, thereby forming a tungsten layer on the TiN layer; and finally, forming a metal layer on the surface of the tungsten layer, wherein the TiN layer and the tungsten layer are used to be a stacked metal barrier layer to prevent the atoms in the metal layer from being diffused into the semiconductor chip.
Patent TW-583204-B (TW)
Title: Process for the manufacture of impact resistant modified polymers
Inventor: MICHELS GISBERT
IPC: C08F279/02
Filed: 2000-07-07
Granted: 2004-04-11
Abstract: A continuous process for the manufacture of impact resistant polymers is disclosed. The process comprise polymerization of a reaction mixture containing vinylaromatic monomers in the presence of soluble rubber and entails shearing at least some of said mixture at a rate of more than 30000 1/s using a device having no rotating parts. The resulting product is characterized in its low gloss and improved impact properties.
Patent TW-553775-B (TW)
Title: Electrostatic flocking chamber for forming electrostatic flocking apparatus
Inventor: ABE MASAAKI
IPC: B05C19/00
Filed: 2000-08-11
Granted: 2003-09-21
Abstract: The object of this invention is to realize optimum flocking conditions for the workpiece being electrostatically flocked passing at high speed through an electrostatic flocking chamber provided with an inlet opening and an outlet opening, which the distance between which openings is increased. The solution for this invention is as follows. In order to conduct an electrostatic flocking operation of the workpiece by having the workpiece traveled at high speed between the inlet opening and the outlet opening, a distance between the inlet opening and the outlet opening is increased, and an electrode for being applied with a high voltage and an electrode for being applied with an voltage regulated to the voltage lower than the high voltage are disposed parallel to a passage of the electrostatic flocking chamber which the workpiece pass through at high speed.
Patent TW-490663-B (TW)
Title: Methods and devices for recording marks in an information layer of an optical record carrier, and record carriers for use therein
Inventor: DEKKER MARTIJN J
IPC: G11B7/125
Filed: 2000-09-21
Granted: 2002-06-11
Abstract: Methods and devices are described for writing an optical record carrier, in which a mark representing recorded data is written in a phase-change layer of a record carrier by a sequence of radiation pulses. A rear heating pulse 24 is introduced after a last write pulse 23, 26 and a front heating pulse 25 is introduced before the first write pulse 22, 26. The power level 13 of the front heating pulse and the power level 15 of the rear heating pulse may be dependent on the length of the mark to be recorded and on properties of the record carrier. The method results in a reduced jitter of the marks written, especially when writing at high recording speeds.
Patent TW-499481-B (TW)
Title: A direct smelting apparatus and process
Inventor: DRY RODNEY JAMES
IPC: C22B5/10
Filed: 2001-02-23
Granted: 2002-08-21
Abstract: A vessel which produces metal from a feed material by direct smelting is disclosed. The vessel contains a molten bath having a metal layer (15) and a slag layer (16) on the metal layer and a gas continuous space (31) above the slag layer. The vessel includes one or more lances/tuyeres (13) extending downwardly into the vessel and injecting an oxygen-containing gas into the vessel and injecting an oxygen-containing bas into the vessel above the metal and slag layer. The vessel includes a plurality of pairs of lances/tuyeres (11) extending downwardly and inwardly into the vessel and injecting feed material with a carrier gas into the molten bath so as to penetrate the metal layer and generate a bath-derived gas flow which carries molten material upwardly. The pairs of lances/tuyeres are spaced around the circumference of the vessel with one lance/tuyere of each pair injecting metalliferous feed material, at a temperature of at least 200 DEG C. and the other lance/tuyere of each pair injecting carbonaceous material, at a temperature less than 200 DEG C.
Patent TW-538173-B (TW)
Title: Coating for treating substrates for ink visualization and retention, method for treating said substrates, and articles produced therefrom
Inventor: BAGWELL ALISON SALYER
IPC: D06P5/30
Filed: 2001-02-27
Granted: 2003-06-21
Abstract: A method of producing a printed substrate so as to improve the adhesion, colorfastness and washfastness of either reactive or acid dye-based ink jet inks printed onto the substrate, the method includes the steps of providing a substrate, treating the substrate with an aqueous coating formulation comprising a cationic polymer or copolymer, a fabric softener, treating the substrate of step with an imbibing aqueous solution of either urea, and an ingredient selected from sodium bicarbonate, sodium carbonate or combinations thereof, or ammonium sulfate, drying the substrate, printing on the substrate with either an acid or reactive dye-based ink, depending on the coating and post treating the printed substrate.
Patent TW-473843-B (TW)
Title: Semiconductor device
Inventor: YOKOGAWA TOSHIYA
IPC: H01L29/36
Filed: 2000-11-20
Granted: 2002-01-21
Abstract: An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layers 22 from sub-bands of the n-type doped layers23 that occur due to quantum effects. In the undoped layers 22, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active region 30 has become depleted, a large withstand voltage value can be obtained due to the undoped layers 22 by taking advantage of the fact that there are no more carriers in the active region 30.
Patent TW-490922-B (TW)
Title: Microwave oscillation circuit using a dielectric resonator
Inventor: KOSE YASUSHI
IPC: H03B5/18
Filed: 2001-03-02
Granted: 2002-06-11
Abstract: In a microwave oscillation circuit using a dielectric resonator, a bias resistor for determining a bias voltage supplied to a base terminal of a transistor is located in the neighborhood of a connection point between a feedback circuit side stub for the dielectric resonator and the base terminal of the transistor. The bias resistor has a resistance which basically determines a bias voltage supplied to the base terminal of the transistor and which is enough to make high the impedance of a bias voltage supplying circuit including the bias resistor, viewed at the input terminal of the transistor. Thus, a stable oscillation can be maintained independently of variation in a load impedance.