baber/WOPTO huggingface dataset:
Patent KR-920000767-B1 (KR)
Title: Method of winding up a hot rolled low and medium carbon steel
Inventor: KANG WON-SUP
IPC: B21C47/00
Filed: 1989-12-27
Granted: 1992-01-23
Abstract: In a coiling method of hot-rolled steel plate (1)  comprising 0.01- 0.3 wt.% C, a hot-rolled steel plate (1) containing 0.01-0.06 wt.% C and/or 0.13-0.3 wt.% C is coilied under  the  unit  tention (U,T)2 calculated by the  formula  of  (U,T)2  calculated  by  the formula of  (U,T)22  =  ((U,T)12  x  (ε1/YP1))/(ε2/YP2)  (kg/mm2) [ε1(%): strain ratio of  (1)  containing  0.06-0.13  wt.%  C; ε2: strain ratio of (1) containing 0.01-0.06  wt.%  C;  YP1  (kg/mm2): yield strength of (1) containing 0.06-0.13 wt.% C;  YP2  (kg/mm2): yield strength  of  (1)  containing  0.01-0.06  wt.%  C;   (U,T)1 (kg/mm2): unit tension according to thickness  of  (1)  containing 0.06-0.13 wt.% C; (U,T)2 (kg/mm2): unit tension of (1)  containing 0.01-0.06 wt.% C.
Patent KR-900005016-B1 (KR)
Title: Radiation activated hydrosilation
Inventor: DRAHNAK TIMOTHY J
IPC: C07F7/08
Filed: 1990-02-20
Granted: 1990-07-16
Abstract: A platinum complex of formula (I) are prepd. In the formula, Cp' is a cyanopentadienyl gp. eta-bonded to the platinum atom and is also bonded to the silicon atom of an organosilyl gp.; each of R1, R2 and R3 is C1-18 aliphatic gp., the gps. R1, R2 and R3 being signa bonded to the platinum aton; each R4 (same or different) is C1-18  satd. linear aliphatic gp., C3-18 satd. branched aliphatic gp., C4-18 alicyclic gp., C6-14 aryl gp. or -Cp'Pt'(R1)(R2)(R3); R5 is R4 or -o- (Si(R4)2O)-. (I) are useful as actinic-radiation sensitive catalysts for a hydrosilation process.
Patent KR-960014009-B1 (KR)
Inventor: KAIZU HIDEO
IPC: G01M17/02
Filed: 1990-03-09
Granted: 1996-10-11
Abstract: 내용없음.
Patent KR-0127044-B1 (KR)
Inventor: MATSUOKA NORIYUKI
IPC: H01L23/32
Filed: 1990-04-04
Granted: 1997-12-29
Abstract: 없음
Patent KR-900003929-B1 (KR)
Title: Gas detector
Inventor: CHONG HYOUNG-JIN
IPC: G01N27/12
Filed: 1990-04-13
Granted: 1990-06-04
Abstract: The sensor for detecting methane, Butane, and propane gas at low temperature includes a metal oxide semiconductor layer whose ingredients are In2O3 (30-40%), Y2O3 (9-19%), and Al2O3 (50%). The method for manufacturing the semiconductor layer comprises a first process for mixing and heating the material at 450≰C, a second process for pulverizing and mixing with water to form paste, a third process for coating the paste on a ceramic insulator tube and for drying the coated tube, a fourth process for heating at 700-800≰C for 30 minutes, and a fifth process for cooling.
Patent KR-960002815-B1 (KR)
Inventor: NOGLE GEORGE SCOTT
IPC: G11C11/417
Filed: 1990-04-18
Granted: 1996-02-26
Abstract: 내용 없음.
Patent KR-920004041-B1 (KR)
Title: Conveyer for vertical supplying of different devices
Inventor: PYON HUI-SOO
IPC: H05K13/02
Filed: 1990-06-26
Granted: 1992-05-22
Abstract: A vertical conveying device consists of parts  sliding  pant, stick indexing part, stick fastening  part  and  block  part.  The parts sliding part includes a stopper, a frame plated with chrome, a cover and BRKT sensor. The stick  indexing  part  includes  BRKT mounting first cylinder, a pin for second cylinder, a spacers as a bearing, bush guider, a collar equiped with springs, another  BRKT established on a plunger, pin link for latch and so on. The  stick fastening part includes  supporting  blocks,  a  housing,  guiding plates, clamps, turning  shaft,  supporting  shafts,  a  plate  to leading ball plunger and stick guider. The block part  includes  a latch frame for mounting indexing apparatus and  a  feeding  block for robot frame and feeder frame.
Patent KR-930003237-B1 (KR)
Title: Undershoot resistor circuit
Inventor: OH JONG-HUN
IPC: G11C11/409
Filed: 1990-06-27
Granted: 1993-04-23
Abstract: The circuit for preventing the memory  cell  operation  error comprises a PMOSFET (MP11) having a gate for receiving an  address input signal and a source connected to a  power  supply  (Vcc)  to perform a switching function, a first NMOSFET (MN12) having a gate for receiving the address input signal, a drain connected  to  the drain of PMOSFET, and a source connected to an external input (AN) to perform a switching  function,  a  second  NMOSFET  (MN13)  for perform the switching function, an  inverter  (G1)  receiving  the address  input  signal  and  a  third  NMOSFET   (MN14),   thereby preventing the operation  error  by  undershooting  of  the  input section.
Patent KR-920010804-B1 (KR)
Title: Neutralizing agent producing method for acidir waste water
Inventor: KIM JUN-KU
IPC: C02F1/66
Filed: 1990-08-17
Granted: 1992-12-17
Abstract: Process for preparing neutralizer containing slaked lime as a main component comprises (1) adjusting the specific gravity  of  a sludge to 1.4, (2) adding caustic lime and water into  the  liquid sludge and (3) agitating and reacting above mixtures to adjust the pH to above 12. The sludge is obtained as by-product in  preparing of acetylene gas from carbide, and the mixture  ration  of  liquid sludge, caustic lime and water is selected from a  group  composed of 8.4:1.3, 7:1:4, 5.6:1.5:4.5, 4.9:1.7:4.8 etc.. Thec neutralizer is useful for neutral treating industrial wastes such waste acidic water.
Patent KR-930006182-B1 (KR)
Title: Ghost remove apparatus of tv
Inventor: KIM KI-HYON
IPC: H04N5/21
Filed: 1990-08-24
Granted: 1993-07-08
Abstract: The apparatus  for  preventing  the  degradation  of  picture quality by removing the reflection wave comprises:  a  transversal filter (23) outputting the standard signal or  the  output  signal obtained from the switch to the quasi ghost signal by  calculating the tap coefficient; a subtracter (24b) detecting the ghost signal by extracting the standard signal from the digital image signal; a subtracter (24c) generating the error  signal  by  extracting  the quasi ghost signal from the ghost signal; an error signal register (25) storing the error signal during one field; a multiplier  (26) computing the new tap number by multiplying the error signal value and the standard signal; an accumulative adder (27).
Patent KR-970001895-B1 (KR)
Title: Laser diode of high power
Inventor: YUN DOO-HYUP
IPC: H01S5/30
Filed: 1990-09-08
Granted: 1997-02-18
Abstract: A high power laser diode is provided to improve a laser density by controlling differently a growing thickness and a growing width of an active layer. The laser diode includes: an n-GaAs current blocking layer(12) formed on p-GaAs substrate(11) being a width(a2) of stimulation region is wider than that of window region(a1) and a width(W2) of stimulation V-groove pattern is wider than that of window V-groove pattern(W1); a p-AlGaAs active layer(15) formed on a p-AlGaAs clad layer(14) being the width and thickness of stimulation region(S) is much wide and thick than that of the window region(W) by LPE(liquid phase epitaxy); and an n-GaAs capping layer(17). Thereby, it is possible to increase laser density and prevent a breaking of the active layer(15).
Patent KR-930008909-B1 (KR)
Title: Evaporating carrier and its perfuming mixture
Inventor: SO DONG-SONG
IPC: A61L9/01
Filed: 1990-11-09
Granted: 1993-09-17
Abstract: Aroma emitting carrier compsn.  comprises  polyporous  silica surface adsorbed with aroma. Polyporous silica surface is  treated with 1-10 wt.% of alcohol vapor, then adsorbed with aroma 10 or 50 wt.%, treated with 5-20 wt.% emulsifying mixture  of  silicon  oil and multivalent alcohol. This carrier can keep emission for a long period and has steady volatility, and prevents change of aroma.
Patent KR-940011104-B1 (KR)
Inventor: FURUYA NOBUAKI
IPC: H01S3/086
Filed: 1990-12-13
Granted: 1994-11-23
Abstract: 내용 없음.
Patent KR-100202048-B1 (KR)
Inventor: GIUSEPPE FERLA
IPC: H01L29/49
Filed: 1990-12-28
Granted: 1999-06-15
Abstract: 전력-MOS 반도체 장치를 제조하기 위한 공정은 자기 정렬 기술 및 스탭퍼형 노광 징치를 사용하여 높은 셀 밀도를 달성할 수 있다. 이 공정은 상보 스페이서 기술에 의한 소스의 한정 및 형성과 게이트 벽(제11도) 상에 스페이서를 형성한 후에 규화물에 의한 소스 및 게이트 접촉 영역의 금속화에 적합하다.
Patent KR-930009914-B1 (KR)
Inventor: HIRATA TOICHI
IPC: F15B13/04
Filed: 1990-05-01
Granted: 1993-10-13
Abstract: 내용 없음.
Patent KR-940004462-B1 (KR)
Title: Measuring circuit for error rate of frame signal
Inventor: KU JE-KIL
IPC: H04L1/00
Filed: 1991-02-21
Granted: 1994-05-25
Abstract: The circuit comprises error detecting means for receiving frame channel data and detecting the error of a frame channel by a frame data latch clock, bit error counting means for counting the number of error detected from the error detecting means, and bit error rate determining means for latching the signal counted from the bit error counting means and determining the bit error of the frame channel, thereby enabling accurate transmission/reception of information.
Patent KR-100188474-B1 (KR)
Inventor: YUGE KIYOHIRO
IPC: C08G18/50
Filed: 1991-03-07
Granted: 1999-06-01
Abstract: 본 발명은, 
     (ⅰ) 유기 폴리이소시아네이트로서, 폴리메틸렌 폴리페닐 이소시아네이트와 저분자 폴리올로 이루어진 프레폴리머(a)와 톨릴렌 디이소시아네이트와 저분자 폴리올로 이루어진 프레폴리머(b)로 구성되며 (a):(b)의 중량비가 1:0.1 내지 1:10인 혼합물과, 
     (ⅱ) 폴리올로서, 톨릴렌디아민과 지방족 아민을 개시제로 함유하는 폴리에테르 폴리올(c) 및/또는 메틸글루코시드를 개시제로 함유하는 폴리에테르 폴리올(c')와, 트리메틸올 프로판을 개시제로 함유하는 폴리에테르 폴리올(d)로 구성되며, [(c) 및/또는 (c')]:(d)의 중량비가 1:0.25 내지 1:4인 혼합물을, 촉매와 계면활성제의 존재 하에서, 발포제로서 CFC-11의 대체물을 사용하여 반응시키는 것을 포함하는 경질의 폴리우레탄 포움의 제조방법에 관한 것이다. 
     경질 폴리우레탄 포움은 매우 낮은, 예를 들면 23℃ 하에서 120 내지 130x10 -4 Kcal/mh℃의 열전도성을 갖는다.
Patent KR-0130967-B1 (KR)
Inventor: MIYATA HIDEAKI
IPC: B63B1/08
Filed: 1991-06-15
Granted: 1998-04-11
Abstract: 편평한 갑판면으로 설계되어 있는 상부면을 지닌 돌출벌브가 선수 및 선미 또는 그중 어느 한곳에 있는 주몸체의 하부에 제공되어 있어 바다물이 잔잔한 상태일때 상기 갑판면이  수선위에 위치하게 되므로 조파 저항이 감소되고 선박 주몸체의 상하요동이 제거된다. 선박이  고속으로 항해하도록 선수를 지나 전방으로 돌출한 연장부가 제공되어 있으며 상기 연장부는 선체 트렁크로 부터 독립해 있으며 선박의 정박 운전시 선체의 손상을 방지하도록 선택적으로 팽창 및 수축할 수 있다. 핀이 설계 하중 수선을 따라 바로 위에 있는  선체의 측면 외피 철판에 제공되어 있으므로써 들어올림을 효과적으로 억제하여 탑승자의 배멀미를 제거한다.
Patent KR-950002270-B1 (KR)
Inventor: KOJIMA MUTSUMI
IPC: H04L12/70
Filed: 1991-09-28
Granted: 1995-03-15
Abstract: 내용 없음.
Patent KR-940003821-B1 (KR)
Title: Washing machine of cordless control-type
Inventor: KIM JONG-CHON
IPC: D06F33/02
Filed: 1991-09-30
Granted: 1994-05-03
Abstract: A controller and a motor driver of the washing machine are connected for a wireless system. When the operation or selection button is pushed on, the LED emits the corresponding light to the mirror placed at the lower part of the machine body. The light signal is reflected to a receiver (9) to convert to the corresponding electric signal which is fed to a microprocessor (7a). The microprocessor controls the motor and current source with the signal.
Patent KR-100205464-B1 (KR)
Inventor: JAMES M JAFFE
IPC: G11C14/00
Filed: 1991-11-20
Granted: 1999-07-01
Abstract: 강유전성 랜덤 액세스 메모리 디바이스는 열(column)에 내재하는 강유전성 메모리를 포함하며, 각각의 열에 내재하는 메모리 셀은 특정 비트라인에 연결되어 있다. 각각의 메모리 셀은 액세스 제어 트랜지스터에 의해 해당 비트라인에 선택적으로 연결되므로 상기 열에 내재하는 단지하나의 메모리 셀은 동시에 비트라인에 연결된다. 선택된 메모리 셀에 저장된 데이터를 판독하기 위하여, 상기 셀을 2번 스트로브하여 각각의 시간에 발생된 출력전압을 개별적으로 샘플링한다. 첫번째 판독이 파괴성 판독이므로, 두번재 판독 동작은 항상 상기 셀을 "0"상태로 판독한다. 그 다음에, 2개의 샘플된 출력을 배교하여, 첫번재 판독이 두번째 판독을 적어도 한계량 정도 초과하는 경우 "1" 출력값을 발생시킨다. 그러하지 않을 경우 "0"이 출력값이다. 바람직한 실시예에서는, 상기 메모리 셀을 스트로브하는 것과 상기 메모리 셀의 출력을 샘플링하는 것 사이의 시간 지연에 있어, 상기 셀을 판독하는 첫번째 시간이 상기 셀을 판독하는 두번째 시간보다 길다. 이리하여, 상기 셀이 "0"비트를 저장하는 경우 첫번째 판독은 첫번째 판독이 지연되지 않았던 것보다 작은 출력 전압을 발생시키는데, 이는 "0"비트값을 저장하고 있는 셀을 적절하게 감지하는 것을 보장하는데 도움을 준다.
Patent KR-960001077-B1 (KR)
Inventor: SAIKI EISAKU
IPC: H03K19/0175
Filed: 1991-11-22
Granted: 1996-01-18
Abstract: 내용 없음.
Patent KR-940001767-B1 (KR)
Title: Cultivator
Inventor: MUN BYONG-HYON
IPC: A01B49/00
Filed: 1991-12-06
Granted: 1994-03-05
Abstract: A vehicle for agriculture is disclosed in which a frame is installed in front and rear of a vehicle, a steering stand connected to a steering lever is mounted on axle shafts of front wheels and rear wheels, the ends of steering oil pressure cylinders are mounted between the mounts of the steering stand on the shafts so that the front and rear wheels rotate independently, thereby enhancing the efficiency of working.
Patent KR-940001040-B1 (KR)
Title: Apparatus for reducing the use of electricity and for increasing the sensitivity in the thermo-meter
Inventor: BAEK JONG-SUNG
IPC: G01K19/00
Filed: 1991-12-17
Granted: 1994-02-08
Abstract: The device mounted on a calorimeter used for central heating or district heating apartments, increases sensing ability for wide range of measuring the flow and for accurate measuring values, decreases power consumption of flow sensing section for reducing cost. The device comprises a pick-up coil for sensing signals of the flow, op-amplifiers (2)(3) for restricting electric current, resistances (R1)(R3) at respective op-amplifiers (2)(3) for reducing power consumption, condenser (C1) at the amplifier (2) for removing noise primarily, condenser (C2) and resistance (R2) at the amplifier (3) for comparing changes of delicate signals.
Patent KR-940003017-B1 (KR)
Inventor: KIM BYONG-JONG
IPC: A47J27/62
Filed: 1992-01-15
Granted: 1994-04-11
Abstract: 내용 없음.
Patent KR-960002957-B1 (KR)
Title: Method for preparing polyester
Inventor: LEE KWAN-HYUNG
IPC: C08G63/78
Filed: 1992-01-28
Granted: 1996-03-02
Abstract: 1st polycondensation reacting naphthalene dicarboxylic acid or its alkyl ester with an esterification product of ethylene glycol in the presence of a polycondensating catalyst under 500-30 Torr; 2nd polycondensation reacting that under 10-0.1 Torr with controlling the velocity of reaction to satisfy the increasing velocity of the intrinsic viscosity in the condition of : IV(t10-IV(t0)<0.4dl/g, IV(t2)-IV(t0)>0.3dl/g where IV(t0) is an intrinsic viscosity of early stage of the reaction, IV(t1) is an intrinsic viscosity after 90 min of the reaction, IV(t2) is an intrinsic viscosity after 180 min of the reaction,
Patent KR-950002025-B1 (KR)
Title: Input buffer of memory device
Inventor: KIM JAE-HYONG
IPC: G11C11/407
Filed: 1992-03-03
Granted: 1995-03-08
Abstract: The input buffer cuts current flowing from Vcc power supply to Vss terminal while conversing input voltage (2.4 or 0.8 volt) into the output voltage (0 volt or Vcc). The input buffer consists of transistors (PA,PB,NA,NB), an inverter (INV1) which turns on and off a transistor (PA) by feedback of output power, a capacitor (C1) for stable voltage, and a transistor (NC) which receives chip-selection-signal. The buffer turns off transistor (PA) by feedback when the input potential of 2.4 volt is supplied. Thus, power consumption is decreased.+ +
Patent KR-950003399-B1 (KR)
Title: Serial access memory device with input/output common data line
Inventor: MUN JIN-SOK
IPC: G11C11/40
Filed: 1992-06-02
Granted: 1995-04-12
Abstract: The serial access memory system with the in/output common data lines can increase the integration by reducing the unnecessary cell area. This system consists of a serial access memory, gated transsistors, a read-write multiplexer, a sensor amplifier, a write data driver, a data in/output buffer that is commonly connected to the outputs of both the sensor amplifier and the write data driver, and an in/output pad that is commonly connected to the outputs of the in/output buffer.
Patent KR-970003074-B1 (KR)
Inventor: NOGUTSI TAKEO
IPC: D06F33/02
Filed: 1992-08-27
Granted: 1997-03-14
Abstract: 내용없음.
Patent KR-970010131-B1 (KR)
Title: Shift lever
Inventor: CHOE SANG-TAE
IPC: B60K20/02
Filed: 1992-09-15
Granted: 1997-06-21
Abstract: Disclosed is a gear lever apparatus within a manual gear of car.  The apparatus comprises a gear lever(1), a main shaft(4), a base plate(20), a cover(21) and a co-mover(8).  Lower portion of the rod type gear lever(1) functions as a shift lever(2).  A select lever(3) is orthogonalized and fixed to the shift lever(2).  The main shaft(4) is inserted into the select lever(3).  A inserting portion(22, 23) is formed at the base plate(20) and cover(21).  The select lever(3) is through the inserting portion(22, 23).   The hinge slots(24, 25) are formed at center of the inserting parts(22, 23), so that the main shaft(4) is rotatively coupled with the hinge slots(24, 25).  An edge of the horizontal portion of co-mover(8) is connected to the edge of select lever(3).  Thereby, the structure is simplified and the manufacturing cost is reduced.
Patent KR-950000005-B1 (KR)
Title: Continuity moulding apparatus for concrete building materials
Inventor: SO KON-HUI
IPC: B28B13/06
Filed: 1992-09-16
Granted: 1995-01-07
Abstract: The apparatus for continuously forming concrete door frame having wood grains on the surface, comprises a basic conveyor driving between a pair of drive rollers; a forming conveyor combined with the basic conveyor; forming material input device provided at upper forming conveyor; flattening means for flattening upper surface of the forming material before hardening. The forming conveyor (23) has bottom surface (23a), end piece (29), a pair of high vertical sidewalls being able to be bent with 90 degrees from the surface (23a), a quarter arch-type cutting grooves (32)(33) formed along longitudinal direction of both corners at outer bottom of the forming conveyor.
Patent KR-970011403-B1 (KR)
Inventor: KUMAKURA MASAYUKI
IPC: F24F11/06
Filed: 1992-09-25
Granted: 1997-07-10
Abstract: 요약없음
Patent KR-950009734-B1 (KR)
Title: Process for producing a latex for methylmethacrylate-butadiene-styrene resin
Inventor: HAN JONG-SUN
IPC: C08F236/04
Filed: 1992-10-13
Granted: 1995-08-26
Abstract: The method manufactures a particle size controlled rubber latex for methyl metacrylate-butadien-stryrene resin. A monomer mixture of dienic monomer such as 1,3-butadiene or isoprene 70-100wt.%, and mono vinylidene aromatics and unsat. nitrile each and/or their mixture 0-30 wt.%, are added ion-exchanged water, 1st. emulsifier, radical polym. initiator, mol weight controller and crosslinking agent and heated to 30-60 deg.C for 6-8 hrs. At 20-40% of reaction rate, adding 2nd emulsifier and continuing polymerization for 14 hrs. Rubber particle size is 0.1-0.2micro meter, and gel-content is 80-90%.
Patent KR-100269278-B1 (KR)
Title: Method for manufacturing capacitor using ferroelectric thin film
Inventor: PAEK SOO-HYUN
IPC: H01L27/04
Filed: 1992-10-14
Granted: 2000-10-16
Abstract: PURPOSE: A method is provided to fabricate a capacitor using a ferroelectric thin film which is a PZT(Lead-Zirconate-Titanate) of good quality. CONSTITUTION: After implanting P into a silicon substrate(10), an annealing is performed in a furnace for 30 minutes at a temperature of 900 deg.C to remove a surface damage of the substrate due to the ion implantation. Then, a TiN layer(50) having a low resistivity and a thermodynamical stability and a low diffusion coefficient is formed to have an ohmic contact with the substrate and to be used as a diffusion barrier layer and a bottom electrode on the silicon substrate, using a reactive sputtering method. Then, an amorphous PZT layer is formed on the TiN layer using an RF magnetron sputtering method. The amorphous PZT layer becomes a crystalline PZT thin film(30) of perovskite structure by processing the substrate in an RTA(Rapid Thermal Annealing) for 10-20 seconds at a temperature of 50-800 deg.C. Then, a top electrode(40) is formed by depositing a polysilicon on the crystalline PZT layer after forming a TiN layer on the PZT thin film in order to prevent an interface reaction between the polysilicon and the PZT thin film.
Patent KR-960002072-B1 (KR)
Title: Fabricating method of semiconductor device
Inventor: NAM JUNG-LIM
IPC: H01L21/304
Filed: 1992-10-20
Granted: 1996-02-10
Abstract: forming a water-soluble polymer layer(23) on a semiconductor substrate(21); forming a photosensitive film(24) thereon; soft-baking the photosensitive film(24); exposing the photosensitive film(24) selectively to light; selectively forming an upper layer having resistance to a plasma by exposing the upper surface of the photosensitive film(24) to an organic metal substance; carrying out post exposure baking process of the photosensitive film having the selective upper layer; forming a photosensitive film pattern by removing the photosensitive film without the upper layer and the water-soluble polymer layer(23) in turn; and removing the photosensitive film pattern. Removal of the photosensitive film and its upper layer without demage of the substrate and other layers enhances reliability of the semiconductor device.
Patent KR-960008350-B1 (KR)
Inventor: HAYASHI NORIHIKO
IPC: B66F9/24
Filed: 1992-10-22
Granted: 1996-06-24
Abstract: 내용 없음.
Patent KR-100274516-B1 (KR)
Title: 음극선관용 자기 집속 장치
Filed: 1992-11-03
Granted: 2001-01-15
Abstract: 본 발명의 자기 집속 장치는 음극선관(1)의 네크(8)의 주위에 배치되어 있다. 이 자기 집속 장치는 상기 네크(8)에 반경 방향으로 가장 근접한 부분 내에간극(13)이 있는 자기 프레임과; 상기 프레임의 내부에 수용되고 직류 전류에 의해 통전되는 정적 집속 코일(11)과; 상기 정적 집속 코일(11)과 음극선관의 네크(8)와의 사이에 배치되어 주기적으로 변화하는 전류에 의해 통전되는 동적 집속 코일(12)을 포함한다. 자기 집속 장치는 투자율이 서로 상이한 프레임 부재(20, 21)로 구성된 자기 프레임에 특징이 있고, 또한 상기 동적 집속 코일(12)은 간극(13)의 부근에 배치되고 투자율이 최저인 재료로 제조된 프레임 부재를 자기 프레임으로서 이용하는 점에 특징을 갖는다.
Patent KR-940000132-B1 (KR)
Title: Water pump
Inventor: HAN DAE-RIM
IPC: F04D13/08
Filed: 1992-11-05
Granted: 1994-01-07
Abstract: An installation structure for a underwater propeller pump is disclosed in which a plurality of reinforcement pieces are fixed between upper and lower flanges, the lower flange is fastened to a support frame, a pump casing and a packing are installed inside a water ejecting pipe so that a pump is installed inside the water ejecting pipe, thereby enhancing pumping efficiency.
Patent KR-960011858-B1 (KR)
Title: Semiconductor device isolation method
Inventor: KIM YUN-KI
IPC: H01L21/76
Filed: 1992-12-10
Granted: 1996-09-03
Abstract: The method of isolating semiconductor device comprises the steps of : forming a HSG(Hemispherical Grain) film(42) on a silicon substrate(41); forming a photoresist pattern(43) to expose the region where a field region is formed; injecting ions into the top and bottom region of the substrate by two-step ion-injection(44,45) using the photoresist pattern(43) and the HSG film(42) as a mask; forming a micro trench(46) by etching the silicon substrate; forming a field oxide film(51) by oxidizing the front face of the wafer after removing the photoresist pattern(43) and the HSF film(42).
Patent KR-950005244-B1 (KR)
Title: Address bus intermitting method in ticom system
Inventor: JONG KI-SONG
IPC: G06F12/02
Filed: 1992-12-24
Granted: 1995-05-22
Abstract: a first step of determining if a selected random address corresponds to an input/output device, and, if conespounds giving a priority to one address 12 of the addresses if the address bus is used at the preceeding cycle; a second step of giving the priority to the address 10 if the address corresponds to the system control module when the selected address does not correspond to the input/output device; and a third step of giving the priority to the next address according to the use of the address bus 9 during the preceeding cycle if the address does not correspond to system control module, but to CPU.
Patent KR-100209578-B1 (KR)
Inventor: HAM HEON-JU
IPC: C30B35/00
Filed: 1992-12-29
Granted: 1999-07-15
Abstract: 본 발명은 브릿지만법을 이용한 망간-아연 페라이트 연속공급식 단결정 성장시 추가적으로 원료를 공급하는 경우 값비싼 백금 보조도가니를 사용치 않으며 분말상태의 원료를 투입시킴에 따라 원료처리공정이 단순화되며 단결정 성장시 백금 및 불순물의 혼입을 차단시켜 특성이 우수한 단결정을 성장시킬 수 있는 망간-아연 페라이트 단결정 성장시 원료공급장치에 관한 것으로, 브릿지만법에 의한 연속공급식 망간-아연 페라이트 단결정 성장시 추가적으로 원료를 공급함에 있어서, 진동자에 연결된 원료공급호스 하단부에 이를 포함하는 외부전원부와 연결된 코일이 설치되고, 상기 원료공급호스로부터 공급되는 분말상태의 원료가 코일내부를 통과하면서 집적되고 발열체부에 의해 용융되어 주도가니에 낙하되는 액적을 감지하는 센서가 발열체부의 하방에 설치된 것인 것이다.
Patent KR-0162100-B1 (KR)
Inventor: STEFANUTTI OSCAR E
IPC: F16D65/04
Filed: 1991-01-23
Granted: 1998-12-01
Abstract: 자동차 용 자동 트랜스미션의 클러치 드럼을 제어하는 복식의 외부수축식 브레이크 밴드 (10)는 일체적으로 압형된 띠 (12)로 형성되고, 그의 단들 (26)이 결합되어 원형의 밴드를 형성한다. 띠는 세로의 홈들(19)과 그리고 밴드의 수축과 팽창을 제어하는 셋의 평행의 띠들(20, 22)을 형성하는 제거할 수 있는 띠 부분을 포함한다. 제1의 브래킷 (14)이 바깥 띠들 (22)에 고정되고 제2의 브래킷 (16)이 중간 띠 (20)에 고정되어 수축/팽창 운동의 제어를 손쉽게 한다. 브래킷들 (14, 16)은 띠들 (22, 24)에 고정시켜져 손상과 기능불량이 감소된다.