Patent GB-960035-A (GB)
Title: Improvements in apparatus for the production of semi-conductor material
IPC: B65B39/10
Filed: 1962-03-29
Abstract: An apparatus for the production of silicon comprising a reaction chamber provided with a gas inlet and outlet means and two or more rod-like carriers each supported at one end thereof and arranged within the reaction chamber in such a manner that the other, unsupported, ends of the carriers are electrically connected together, the mounted ends of the carriers being adapted so that they can be connected to a source of electric current whereby the carriers can be heated to a temperature not greater than 200 DEG  C. below the melting point of the semi-conductor material from which they are made, is characterized in that the greatest distance separating the, or any two, carriers is smaller than the smallest distance of one of the carriers from the or a wall of the reaction chamber. Preferably the ratio of the distances is at least 2.  In operation, a stream of gas, for example hydrogen and a silicon compound e.g. SiCl4, SiH2Cl2, SiH3Cl, SiBr4, SiHBr3, SiHCl3 or the corresponding germanium compounds is introduced into the apparatus through inlet means.  With hydrogen and SiHCl3 the temperature is preferably 1150 DEG  C. and the hydrogen to SiHCl3 molar ratio is 20 : 1 and the throughput is 2 cubic <PICT:0960035/C1/1> metres per hour.  In Fig. 1, the reaction chamber is defined by a cylindrical upper portion 8 of quartz or glass and base portion 9 of metal through which conductors 5 and 6 pass, conductor 5 being earthed and electrically connected to base 9, whilst conductor 6 is insulated through the base which may be cooled by water or gas.  The carriers 2 and 3, preferably 25-50 mm. apart, consist of silicon and extend longitudinally in the reaction chamber and are connected at their upper ends by member 4 of spectrally pure carbon or silicon.  Alternatively the unsupported ends may be in contact with one another.  The reaction mixture is supplied through tube 10 arranged to extend within tube 11 through which the waste gases are discharged thus preheating the reaction gases. Specification 861,135 is referred to.ALSO:An apparatus for the production of germanium a silicon comprising a reaction chamber provided with gas inlet and outlet means and two or more rod-like carriers each supported at one end thereof and arranged within the reaction chamber in such a manner that the other, unsupported ends of the carriers are electrically connected together, the mounted ends of the carriers being adapted so that they can be connected to a source of electric current whereby the carriers can be heated to a temperature not greater than 200  DEG C. below the melting point of the semi-conductor material from which they are made, is characterized in that the greatest distance separating the, or any two, carriers is smaller than the smallest distance of one of the carriers from the or a wall of the reaction chamber.  Preferably the ratio of the distances is at least 2.  Hydrogen and a germanium compound e.g. GeCl4, GeH2Cl2, GeH3Cl, GeBr4, GeHBr3, GeHCl3 may be used. In Fig. 1 the reaction chamber is defined by a cylindrical upper portion 8 of quartz or glass and a base portion 9 of metal through which conductors 5 and 6 pass, conductor 5 being earthed and electrically connected to base 9, whilst conductor 6 is insulated through the base which may be cooled by water or gas.  The carriers 2 and 3, preferably 25-50 mms. apart, consist of silicon and extend longitudinally in the reaction chamber and are connected at their upper ends by member 4 of spectrally pure carbon or silicon. Alternatively the unsupported ends may be in contact with one another.  The reaction mixture is supplied through tube 10 arranged to extend with tube 11 through which the waste gases are discharged thus preheating the reaction gases.  Specification 861,135 is referred to. <PICT:0960035/C6-C7/1>