baber/WOPTO huggingface dataset:
Patent JP-H10117123-A (JP)
Title: Surface acoustic filter device
Inventor: TADA YUTAKA
IPC: H03H9/64
Filed: 1996-10-09
Abstract: PROBLEM TO BE SOLVED: To actualize balancing operation which has a ground potential at a neutral terminal and obtain an unbalanced input-balanced output adaptive filter by adopting series constitution which has two parallel elements on the input side and one shape-inverted element on its output side. SOLUTION: Surface acoustic wave filter 3a and 3c are electrically cascaded through ground electrodes 5a and 5b and surface acoustic wave filters 3b and 4 are similarly cascaded through ground electrodes 5b and 5c. Input terminals of the surface acoustic wave filters 3a and 3b are electrically connected in parallel and let out to an input balanced terminal 6 and ground terminals 7a and 7b, and surface acoustic wave filters 3c and 4 are electrically connected in series through a series connection electrode 8 and then led out to output-side balanced terminals 9a and 9b. The surface acoustic wave filters 3a to 3c have the same amplitude and phase characteristics in the band of input/output transmission characteristics and the surface acoustic wave filter 4 has input/output phase characteristics which are approximately 180 deg. different from the surface acoustic wave filters 3a to 3c.
Patent JP-H11111678-A (JP)
Title: Dry etching method
Inventor: ISHIDA MASAHIRO
IPC: H01L21/3065
Filed: 1997-10-01
Abstract: PROBLEM TO BE SOLVED: To facilitate dry etching of a semiconductor for which the formation of the end face of resonator is difficult by forming a mask partially on the surface of the semiconductor and irradiating the surface of the semiconductor obliquely with ions, thereby controlling the angle of the end face of the dry etched semiconductor. SOLUTION: An SiO2 layer 2 and an Al2 O3 layer 3 are formed as a mask on a part of the surface of a semiconductor 1 constituted of GaN. The surface of the semiconductor 1 is then irradiated with BCl3 gas ions at an incident angle (x) using a parallel plate type reactive etching system, thus etching the surface of the semiconductor 1. Consequently, an etching side face 4 is formed on the semiconductor 1 through dry etching. An angle (y) between the etching side face 4 and the surface of the semiconductor 1 can be controlled by regulating the incident angle (x) of BCl3 gas ions. Maintenance of piping is facilitated when BCl3 gas is used, as compared with Cl2 gas.
Patent JP-S61147684-A (JP)
Title: Address code reproducing device
Inventor: KOSUGI HIROSHI
IPC: H04N5/94
Filed: 1984-12-21
Abstract: PURPOSE:To decrease an error rate by mounting a controlling circuit which is outputting the first code signal proceeding by one horizontal period in a drop-out compensating circuit when the following second code signal is judged an error code and reproducing an address signal through the first code signal. CONSTITUTION:When any drop-out is found in a picture number code PN2 inserted in 18th horizontal period, it is complemented in a compensating circuit 2 by a picture number code PN1 in proceeding 17 horizontal period. Even when the picture number code PN2 inserted in the 18th horizontal period is not complemented by means of micro drop-out, etc. and outputted as fault data, or disk on which faulty PN2 is recorded in manufacturing process of disks is reproduced, it is possible to control the reproduction of an accurate address code and decrease the error rate by outputting the picture number code PN1 inserted in the 17th horizontal period.
Patent JP-H01110774-A (JP)
Title: Electrostatic induction semiconductor device and manufacture thereof
Inventor: KATO FUMIO
IPC: H01L27/08
Filed: 1987-10-23
Abstract: PURPOSE:To constitute a highly reliable switching circuit capable of properly meeting changes in threshold voltages subsequent to changes in drain.source voltages by a method wherein gate regions are approximately equal in dimension but either gate regions or source regions are different in regional area though roughly equal in depth. CONSTITUTION:An electrostatic induction semiconductor device 1 of this design is provided with a plurality of electrostatic induction semiconductor elements 2, 2' positioned at one side of a substrate 3. In each of the electrostatic induction semiconductor elements 2, 2', a source region 4 is positioned between gate regions 5, 5 or 5', 5'. The length l that is the distance between the gate regions 5, 5 or 5', 5' is approximately equal between the electrostatic induction semiconductor elements 2, 2'. The gate regions 5, 5, 5', 5' or the source regions 4 are designed, however, to be different in area though roughly equal in depth. For example, electrostatic induction transistors 2, 2' are roughly equal in distance l between gate regions 5, 5, 5', 5', and are again roughly equal in the depth of the gate regions 5, 5, 5', 5'. The widths L1 and L2, however, are different, which creates some difference in regional area and a little difference in gate cut-off voltage in the transistors 2, 2'.
Patent JP-H01110731-A (JP)
Title: Alignment in electron beam exposure
Inventor: TAKAHASHI YASUSHI
IPC: G01B15/00
Filed: 1987-10-23
Abstract: PURPOSE:To enable a specimen to be written with high precision and in high throughput while correcting the beam deflection by detecting the height fluctuation of the specimen without using my optical measuring instruments by a method wherein the beam deflection correcting coefficient of imaginary deflectable regions is calculated at one mark position while the beam deflection correcting coefficient regarding the height fluctuation is calculated at the remaining mark positions. CONSTITUTION:An imaginary beam deflectable region 38 with a mark A centered on a beam deflectable region is formed on a position of the mark A for alignment, the mark A is successively stage-shifted (a) to the positions corresponding to the four corners of the region 38, and the beam deflection correcting coefficient of the region 38 is calculated by detecting the mark A by beam deflection from the center of the region 38. Then, the mark A is stage- shifted to the remaining mark positions B-D to calculate the beam deflection correcting coefficient regarding the height fluctuation as well as the relative height relation of the remaining mark positions from the correction coefficient and said imaginary beam deflection correcting coefficient so that the beam deflection correcting coefficient of the region 38 may be corrected corresponding to the relative height relation and the central height of respective beam deflectable regions to calculate the beam deflection correcting coefficient of respective beam deflectable regions.
Patent JP-H03132014-A (JP)
Title: Mocvd apparatus
Inventor: KIRIHARA TOSHIO
IPC: H01L21/205
Filed: 1989-10-18
Abstract: PURPOSE:To have a film thickness uniform by a method wherein not only an inclination against a direction parallel with a gas flow but also an inclination against a direction perpendicular to the gas flow are given to a substrate support table to adjust a gas flow rate distribution across the cross section. CONSTITUTION:A gas flow rate in a tube is varied in accordance with the cross sectional area of the tube. The higher the gas flow rate, the slower the growth rate of an epitaxial film formed by MOCVD. A substrate support table 1a has an inclination of an angle theta against a direction parallel with the direction of a gas flow 1c and an inclination of an angle phi against a direction perpendicular to the direction of the gas flow 1c. After the optimum value of the angle thetais determined, the optimum value of the angle phi is determined to have a film thickness distribution on the surface uniform. Or it is also effective that a growth substrate 3b is placed on a parallel flat plate support table 3a in a growth reaction tube and the flow rate of the gas 3c is controlled by a controlling dam 3d having inclinations of angles theta and phi. If the dam 3d, like the support tables 3a and 1a, can be heated, the fall of adhering substances from the upper wall of the reaction tube can be avoided, so that defective parts can be suppressed.
Patent JP-H01111222-A (JP)
Title: Input pen
Inventor: KUWABARA TAKASHI
IPC: G06F3/03
Filed: 1987-10-23
Abstract: PURPOSE:To obtain the information on the density and the thickness of lines of characters to be displayed by detecting the information on the contact pressure and the tilt state of a pen point part. CONSTITUTION:When a pen top part 22 is pressed strongly and vertically onto the surface of a digitizer, the distance is shortened between a magnet 3 and a 1st hole IC 4. Then the output voltage of the IC 4 exceeds the threshold value and the voltage high in level is obtained in accordance with the contact pressure. When the part 22 is pressed onto the digitizer in a tilted state, the magnet 3 tilts against the hole IC 4, a 2nd hole IC 4a and a 3rd hole IC 4b respectively. As a result, the vertical resistance on the screen is divided into a lod direction A and a direction B vertical to the direction A. Thus the information in the tilted state is obtained.
Patent JP-H01111754-A (JP)
Title: Production of granulated slag
Inventor: IKEBUCHI IWAO
IPC: F27D15/00
Filed: 1987-10-23
Abstract: PURPOSE:To stably produce the above granulated slag having uniform properties without variance by flying molten slag in a rotary hood filled with a water mist atmosphere to granulate and cool the slag, and controlling the amt. of water to be sprayed based on the exhaust temp. CONSTITUTION:The inside of the horizontally inclined rotary hood 11 arranged on a guide roller 12 is filled with a water mist atmosphere by a water spray nozzle 13. Meanwhile, the molten slag from a pan C is poured over the rotary drums 10a and 10b having a radial blade 10' through a hopper (d) and a chute 3, and supplied into the rotary hood 11 as the flying molten slag 1a. The molten slag 1a is granulated, dispersed, and cooled by the water mist and the air from a pipe 14 to form granulated slag 1. The granulated slag 1 is passed through a penetrating hole 19, and recovered from a discharge port 20 through a collecting pipe 18. A temp. sensor 27 is arranged in an exhaust passage connecting the exhaust port 16 of the rotary hood 11 and an exhauster B to measure the exhaust temp. The temp. in the rotary hood 11 is easily and accurately detected from the measured value, and the amt. of water to be sprayed is controlled.
Patent JP-H11111914-A (JP)
Title: Three dimensional memory module
Inventor: YOSHIKAWA TAKEO
IPC: H01L23/32
Filed: 1997-10-01
Abstract: PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes and shorten TAT by integrally connecting a plurality of semiconductor memory devices via conductive spacers with anisotropic conductive films. SOLUTION: A conductive spacer structure 3 with anisotropic conductive films is made by adhering anisotropic conductive films 1 on both faces of a conductive spacer 2. A semiconductor memory device 6 is a device, wherein a single semiconductor memory device 4 sealed in a case is mounted on one face of a substrate. A plurality of the semiconductor memory devices 6 are located on both faces of the conductive spacer structure 3 with anisotropic conductive films and then pressurized and heated to be connected electrically to form a three dimensional semiconductor memory device 9. A three dimensional memory module 12 is made by mounting a plurality of the three dimensional memory devices 9 provided with solder bumps 10 as external terminals on a memory module substrate 11.
Patent JP-S63123171-A (JP)
Title: Data transfer device
Inventor: WAKABAYASHI NAOKI
IPC: G06T3/00
Filed: 1986-11-12
Abstract: PURPOSE:To transfer transparent data and opaque data by one data transfer by calculating two pieces of transfer destination data so as to store the results in a transfer destination memory if a mask register shows an effective bit and if an opaque mode holds no transfer destination data and storing the transfer destination data as it is any cases apart from the above-mentioned case. CONSTITUTION:The logic '1' of the mask register 13 indicates the arithmetic effective bit position of a computing element 10, while logic '0' holds the transfer destination data as it is. If a flip flop 19 is of logic '1', that is called a transparent mode, and a background color that a background color register 22 shows is regarded as 'B'. The contents of a data bit 1 hold bits of the transfer destination data corresponding to the bit position 'B'. The bit position of the contents 'F' of the data register 1 executes operations specified by an arithmetic mode register 16 between two pieces of transfer destination data, and the results are stored in corresponding transfer destination bits. If the flip flop 19 is of logic '0', the contents of the data register 1 and the transfer destination data are calculated, and the results are stored in the transfer destination memory 11.
Patent JP-H02114211-A (JP)
Title: Optical branching/coupling device
Inventor: MURAKAMI TAISUKE
IPC: G02B6/28
Filed: 1988-10-25
Abstract: PURPOSE:To obtain an optical branching/coupling which has a desired light branching ratio and high light coupling efficiency by holding end faces of optical fibers at each focusing position of a ellipse forming a rotary ellipsoidal surface. CONSTITUTION:Rays of light made incident from an optical fiber 11 are emitted from a focusing point O1 and uniformly irradiate a rotary ellipsoidal curved surface as a divergent luminous flux. The rays of light irradiating each area 13a-13c of the rotary ellipsoidal curved surface are respectively reflected by the curved surfaces and condensed to end faces of optical fibers located at focusing positions Oa2-Oc2. The condensed rays of light are respectively outputted through optical fibers 12a-12c. Therefore, the rays of light can be branched and coupled at a desired branching ratio.
Patent JP-2000093513-A (JP)
Title: Needleless syringe
Inventor: KIMURA TATSUO
IPC: A61M5/30
Filed: 1998-09-24
Abstract: PROBLEM TO BE SOLVED: To prevent the error of using a disposable nozzle beyond its limit of use due to the forgetting of the limit of use in a needleless syringe using such a nozzle. SOLUTION: The error of using a disposable nozzle 2 beyond its limit of use is prevented by designing life seal 2b showing replacement time to be naturally recognized when the mark 2c of the disposable nozzle 2 and the life seal 2b are bonded together with their centers aligned and a mark 8c and the mark 2c are aligned in order for a chemical adapter 8 storing a chemical vial 7 to be coupled to the disposable nozzle 2.
Patent JP-S61147785-A (JP)
Title: Servo motor drive device
Inventor: TASAKA YOSHIRO
IPC: H02P7/06
Filed: 1984-12-19
Abstract: PURPOSE:To always maintain a servo loop constant even if a power source voltage varies by feeding back to input a drive current value and the output voltage value of a nonstabilized DC power source. CONSTITUTION:A nonstabilized DC power source voltage (b) is supplied to a servo motor drive circuit 4 and one input port B of a multiplexer 6. A differen tial amplifier 5 detects a drive current, and applies it to the other input port A of the multiplexer 6. The multiplexer 6 receives a switch command (e) from a microcomputer 3, selects either one input of two input ports A, B, and outputs it to an A/D converter 7. The converter 7 converts it to a digital signal, and outputs as a feedback input (f) to the microcomputer 3. The microcomputer 3 calculates a drive command (d) from a drive command (c) and the feedback input (f).
Patent JP-H0799978-A (JP)
Title: New recombinant vector, recombinant mycoplasma and production thereof
Inventor: OSAWA IKURO
IPC: C12N1/21
Filed: 1993-09-30
Abstract: PURPOSE:To obtain a new recombinant vector and a recombinant mycoplasma. CONSTITUTION:A new recombinant vector wherein a new donative vector which contains at least one marker DNA and a DNA region containing an end repeating sequence derived from a transposon capable of transforming a gram- positive bacterium linked to at least one end of the DNA contains further a different DNA and an auxiliary vector containing at least one of two DNA regions between a marker DNA of transposon and an end repeating sequence, are used to prepare a recombinant mycoplasma.
Patent JP-2000100973-A (JP)
Title: Manufacture of semiconductor device
Inventor: WATANABE TAKAYUKI
IPC: H01L27/11
Filed: 1998-09-24
Abstract: PROBLEM TO BE SOLVED: To lessen the time required for delivery of a semiconductor device after its specifications are determined by a method wherein a process where the resistance of a resistor element is determined is carried out at the time as late as possible when the semiconductor device of the same pattern is changed in characteristics and use by changing the resistance of a resistor element that is formed of polysilicon film and high in resistance and contained in a semiconductor device which includes an SRAM where the resistor element of high resistance serves as a load resistor in a circuit. SOLUTION: A polysilicon film is formed on a second interlayer insulating film 108, N-type impurity ions are implanted into all the surface, the polysilicon film is formed into a polysilicon wiring 109 by patterning, N-type impurity ions are implanted into a power supply line Vcc and a contact 109a high in concentration, a residual part is made to serve as a resistor element R1, a third interlayer insulating film 110 is formed thereon, and an annealing treatment, through which a Ti-TiN laminated film as a base barrier layer of a first Al wiring layer 111 arranged on the third interlayer insulating film 110 is brought into contact with the active region of an Si substrate 101, is changed in annealing temperature so as to determine the resistance of the resistor element R1.
Patent JP-H03132903-A (JP)
Title: Write circuit for flexible disk device
Inventor: KIMURA HITOSHI
IPC: G11B5/09
Filed: 1989-10-17
Abstract: PURPOSE:To improve the rise-up characteristic of a current, and to improve an overwrite characteristic by impressing double voltage for a prescribed period to a write/read head. CONSTITUTION:A toggle flip flop 1 is inverted by write data, and an n-channel MOS-FET 7 is turned ON, and the n-channel MOS-FET 8 is turned OFF. At this time, the output of the monostable multivibrator 2 becomes also a high level, and the output of an AND gate 4 becomes the high level, and the n- channel MOS-FET 9 is turned ON, as well. Then, since the N-channel MOS- FETs 11 and 12 are turned ON asnd OFF respectively, the drain terminal of the MOS-FET 11 becomes nearly equal to a GND level. Since a capacitor 18 is charged with potential Vcc at this point of time, the voltage of the source terminal of the n-channel MOS-FET 9 becomes -Vcc. Thus, the voltage close to 2Vcc is impressed to the write/read head, and the current rises up quickly.
Patent JP-S62130624-A (JP)
Inventor: ISHIKAWA MICHIO
IPC: A01F12/46
Filed: 1985-11-29
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H10114293-A (JP)
Title: Bicycle with electric power assist device
Inventor: MORIMOTO YASUSHI
IPC: B62M6/55
Filed: 1996-10-11
Abstract: PROBLEM TO BE SOLVED: To supply assist power smoothly by reducing the number of samples which calculate an average travel value when bicycle speed is high more than when the speed is low. SOLUTION: A calculation means 220 which calculates an average travel value of pedaling force is connected to a memory means 210 to send bicycle speed detected by a speed sensor 160 to the calculation means 220 sequentially. Moreover, a sample table 230 is connected to the calculation means 220, and the sample determined number for determining the number of samples for calculating the average travel value of pedaling force by corresponding to bicycle speed which is determined in advance is stored therein.  The pedaling force is read out from the memory means 210 by the number of samples which is determined in accordance with bicycle speed detected by a torque sensor 100, the average travel value is calculated from the pedaling force which is read out, and an output of a motor 40 is controlled so that power which corresponds to the average travel value which is calculated is supplemented.
Patent JP-2000096679-A (JP)
Title: Human private parts washing device
Inventor: FUJINO KIYOSHI
IPC: E03D9/08
Filed: 1998-09-24
Abstract: PROBLEM TO BE SOLVED: To improve the sanitary property of a washing water discharge nozzle by arranging a long tubular washing water discharge nozzle reciprocatably in the longitudinal direction between a waiting position and an operating position, and providing a one-end proximity section forming the washing water discharge port of the washing water discharge nozzle and a tube body surrounding its adjacent portion at the waiting position. SOLUTION: A support 17 with a shallow circular arc cross section is inclinatorily arranged along a washing water discharge nozzle 12 directly below the washing water discharge nozzle 12 and is fixed to a casing 25. The front portion of the support 17 forms a tube body 18, and a spiral lug 18a is formed on the inner face. The washing water discharge nozzle 12 is supported by the support 17 and the tube body 18 movably in the longitudinal direction while a cylindrical skirt 12b fitted to the rear end section is kept in contact with the circular arc-shaped inner face of the support 17 and the front portion is inserted into the tube body 18.  The washing water, discharge nozzle 12 is reciprocated in the longitudinal direction between a waiting position and an operating position by the drive of a motor, and the washing water discharge nozzle 12 is stored in the easing 25 at the waiting position.
Patent JP-H02116105-A (JP)
Title: Manufacture of resin-bonded permanent magnet of rare-earth-iron-boron
Inventor: HAYASHI NOBUO
IPC: H01F1/057
Filed: 1988-10-26
Abstract: PURPOSE:To increase heat treatment temperature without oxidizing a magnet powder and to obtain a product with great magnet strength and improved properties by performing heat treatment in vacuum or in inactive gas. CONSTITUTION:A magnet powder whose grain diameter is equal to or less than 300mum and which has main constituents of rare-earth elements and boron is blended with a thermo cure resin for compressed formation in desired shape and is subject to heat treatment for producing a resin-bonded permanent magnet of rare-earth - iron - boron. In this case, heat treatment is performed in vacuum or in an inactive gas such as Ar for preventing oxidation of the magnet powder and for increasing heat treatment temperature to 120 deg.C. With this configuration, a magnet with improved strength and improved characteristics can be obtained in a short heat treatment time.
Patent JP-2000098347-A (JP)
Title: Liquid crystal display device
Inventor: YASUDA HIDEMASA
IPC: G09G3/18
Filed: 1998-09-24
Abstract: PROBLEM TO BE SOLVED: To precisely obtain a panel temp. from an ambient temp. etc., and to make automatically adjustable an applied voltage so that the contrast of a liquid crystal display panel becomes optimum according to this panel temp. SOLUTION: A temp. correction table showing the relation between the ambient temp. and the panel temp. of the liquid crystal display panel 10 is stored beforehand in a memory 28. By detecting the ambient temp. with a temp. detection circuit 22, the panel temp. is obtained using the temp. correction table stored in a the memory 28. An optimum drive voltage is obtained based on the panel temp. obtained by such a manner, and the drive voltage is applied to the electrodes 14A, 14B of the liquid crystal panel 10 to be automatically adjusted so that the contrast becomes optimum. Further, a time etc., until the panel temp. is nearly stabilized is detected by a timer 24, and the proper temp. correction table is selected based on the time detected by the timer 24.