baber/WOPTO huggingface dataset:
Patent TW-I764859-B (TW)
Inventor: CHUA KAW BING
IPC: C12N7/01
Filed: 2016-01-27
Granted: 2022-05-21
Abstract: 本發明係關於腸病毒71(EV71)、動物模式之研發及候選抗EV71化合物之篩選。更具體而言，本發明係關於如下發現：業已適應於感染齧齒類動物細胞株之腸病毒71(EV71)病毒株，或在VP1中含有會致使免疫功能健全齧齒類動物中疾病之突變的經選殖衍生病毒。
Patent TW-I662004-B (TW)
Title: 太陽能電池電極形成用導電性糊
Inventor: KANASAKU TADASHI
IPC: C03C3/155
Filed: 2016-03-10
Granted: 2019-06-11
Abstract: 本發明的目的在於提供可得到良好的電氣特性、可得到對基板更充分的接著強度的太陽能電池電極形成用導電性糊。前述太陽能電池電極形成用導電性糊包含：碲系玻璃料、導電性粉末和有機媒液(organic vehicle)，以氧化物換算，該碲系玻璃料含有30~70莫耳%比率的碲、15~40莫耳%比率的鎢、5~30莫耳%比率的鋅、0~20莫耳%比率的硼、0~10莫耳%比率的鋯(其中，硼和鋯的合計含量大於0莫耳%)，該導電性粉末係以銀作為主要成分且比表面積為0.4m 2 /g以上。
Patent TW-I723011-B (TW)
Title: Support of location services using a positioning protocol
Inventor: EDGE STEPHEN WILLIAM
IPC: H04W64/00
Filed: 2016-03-15
Granted: 2021-04-01
Abstract: Protocols for location services are disclosed. For example, a method for a positioning protocol for first and second devices may comprise, at the first device: creating a message for the protocol at the first device, where the message comprises a set of included parameters from a plurality of allowed parameters, encoding the message by embedding each of the included parameters in an encoded string, and transmitting the encoded message to the second device. 
Similarly, a method for such a positioning protocol may comprise, at a second device receiving a message for the protocol transmitted by the first device, where the message comprises the included parameters, with each included parameter embedded in an encoded string, and decoding the message by decoding a subset of the plurality of included parameters and omitting decoding of included parameters that are not in the subset.
Patent TW-I663851-B (TW)
Inventor: EL-KHAMY MOSTAFA
IPC: H04L1/16
Filed: 2016-03-18
Granted: 2019-06-21
Abstract: 本發明提供一種構建通訊通道之混合式自動重送請求
(HARQ)率相容極碼的方法、裝置、及晶片組。所述方法包括：在終端中構建長度為2   n   的基本極碼；以及藉由對預定準則測試至多(2 2 n   +2   n   )/2-1次來確定具有 m <2   n   個位元的序列在所述基本極碼中刺穿。
Patent TW-I717342-B (TW)
Title: Display apparatus and method of manufacturing the same
Inventor: Kim Hyoengki
IPC: G09F9/00
Filed: 2016-03-24
Granted: 2021-02-01
Abstract: A display apparatus comprises a first substrate comprising a first external surface and a first internal surface; a second substrate having a second external surface and a second internal surface facing the first internal surface of the first substrate; and a display unit disposed between the first and second substrates and comprising an array of pixels. The first substrate comprises a first side connecting the first external surface and the first internal surface. In a cross section perpendicular to the first external surface, the first side comprises a first straight region and a first curved region located between the straight region and the first internal surface. The second substrate 
comprises a second side connecting the first external surface and the first internal surface. The second side comprises a second straight region and a second curved region located between the straight region and the second internal surface.
Patent TW-I648040-B (TW)
Title: Absorbent article
Inventor: ICHIMATA TOSHIAKI
IPC: A61F13/494
Filed: 2016-07-19
Granted: 2019-01-21
Abstract: 於腹側部(1F)中之吸收性本體(5)之兩側緣部(5S)固定有一對腹側翼片(10)。吸收性芯體(40)於縱向X上具有橫向(Y)之長度相對較長之寬幅部(40W)、該長度相對較短之窄幅部(40N)、及位於兩者間之中間寬度部(40M)，中間寬度部(40M)之兩側緣部(40MS)俯視時斜行。腹側翼片固定點(11α)位於假想直線(VL)上或於其附近且較假想直線(VL)更靠縱向X之內側。中間寬度部(40M)之側緣部(40MS)位於假想直線(VL)之附近，且沿著假想直線(VL)斜行。腿褶皺形成用彈性構件(53)之腹側縱向端(53F)位於假想直線(VL)之附近。
Patent TW-I686498-B (TW)
Title: 半導體元件用磊晶基板、半導體元件以及半導體元件用磊晶基板之製造方法
Inventor: ICHIMURA MIKIYA
IPC: H01L21/205
Filed: 2016-11-01
Granted: 2020-03-01
Abstract: 本發明係提供經抑制電流崩塌發生的半導體元件用磊晶基板。半導體元件用磊晶基板係包括：由經摻雜Zn的GaN所構成半絕緣性獨立式基板、鄰接上述獨立式基板的緩衝層、鄰接上述緩衝層的通道層、以及設置於上述緩衝層對向側呈夾置上述通道層狀態的障壁層；上述緩衝層係由摻雜Al之GaN構成，且抑制Zn從上述獨立式基板擴散於上述通道層的擴散阻障層。
Patent TW-I634578-B (TW)
Inventor: HUANG JUI-YI
IPC: H01H13/86
Filed: 2016-11-04
Granted: 2018-09-01
Abstract: 一種鍵盤機構及其裝配方法，係提供底板、鍵帽與具有勾體的框架。鍵帽係可進入框架中並受到勾體的限制，而在上死點與下死點之間進行上下運動，如此鍵帽就無法離開框架，故後續框架與底板的結合，不會再受到鍵帽的干涉，因而本發明可以讓鍵盤的裝配過程有效簡化。
Patent TW-I641030-B (TW)
Inventor: DERDERIAN GARO JACQUES
IPC: H01L21/306
Filed: 2017-02-09
Granted: 2018-11-11
Abstract: 本文中所揭示之一種說明性方法包括形成由複數個原始線型特徵所構成之原始鰭片形成蝕刻遮罩，以及移除該複數個原始線型特徵其中至少一者之至少一部分，以便藉此界定包含該複數個原始線型特徵之其餘部分之修改後鰭片形成蝕刻遮罩。該方法亦包括在該修改後鰭片形成蝕刻遮罩之該複數個原始線型特徵之該等其餘部分上形成保形材料層，以及進行至少一個蝕刻程序以移除至少部分該保形材料層，並且界定複數個鰭片形成溝槽，以便藉此在基材中初始界定複數個鰭片。
Patent TW-I723146-B (TW)
Title: 新穎化合物及含有其之半導體材料
Inventor: INAGAKI SHO
IPC: H01L51/30
Filed: 2017-03-17
Granted: 2021-04-01
Abstract: 本發明提供一種半導體材料，其供予藉由濕式成膜法而展現高移動率的半導體元件，以及提供一種供予該半導體材料的化合物。
 
     通式(1)所表示之化合物：
       
     (式中，Ar表示可具有取代基之芳香族烴基或可具有取代基之雜芳香族基，R 1 表示非環式的碳原子數1~20之烷基(該烷基中的-CH 2 -可以不讓各氧原子、硫原子及氮原子直接鍵結的方式，被-O-、-R ' C=CR ' -、-CO-、-OCO-、-COO-、-S-、-SO 2 -、-SO-、-NH-、-NR ' -或-C≡C-取代，該烷基中的氫原子可被鹵素基、腈基或芳香族基取代(但R ' 表示碳原子數1~20的非環式或環式的烷基)))。
Patent TW-I618911-B (TW)
Title: Wafer packaging device and heat sink and heat sink manufacturing method thereof
Inventor: CHEN YUN-XI
IPC: F28F21/08
Filed: 2017-05-24
Granted: 2018-03-21
Abstract: 一種散熱件，被黏結在一個基板的一層膠料上，且與該基板界定出一個容納空間，該容納空間供電連接於該基板的一個晶片容納，該散熱件包含：面向該晶片且與該晶片相隔一個間隙的一個基壁，及連接在該基壁之周圍的一個圍繞壁。該圍繞壁包括供膠料滲入的數個皿孔。每一皿孔具有鄰近該基板的一個第一孔段、遠離該第一孔段的一個第二孔段，及介於並連接該第一孔段與該第二孔段之間且孔徑最小的一個銜接段，該銜接段供膠料覆蓋。藉此，利用該等銜接段的設計，不但能夠提升黏結時的表面積，且能夠使滲入該等皿孔中且覆蓋該等銜接段的膠料，呈現鉚釘狀的外形及鉚合效果，而加強該散熱件與該基板的結合保持力，進一步提升結合強度。
Patent TW-I649877-B (TW)
Title: 半導體裝置及其製造方法
Inventor: YAMAZAKI SHUNPEI
IPC: H01L21/336
Filed: 2013-01-24
Granted: 2019-02-01
Abstract: 本發明的課題是實現使用氧化物半導體構成的電晶體的電特性的穩定化，而提高該電晶體的可靠性。在一個氧化物半導體膜中，分別形成結晶成分較多的部分和非晶成分較多的區域。以其用作通道形成區的方式構成結晶成分較多的區域，以包含較多的非晶成分的方式構成其他區域。較佳的是，自對準地形成混有結晶成分較多的區域和非晶成分較多的區域的氧化物半導體膜。為了在一個氧化物半導體膜中分別形成其結晶性彼此不同的區域，首先在形成包含較多的結晶成分的氧化物半導體膜之後，進行用來使該氧化物半導體膜的一部分非晶化的製程。
Patent TW-I729160-B (TW)
Inventor: Reid Kimberly Gay
IPC: H01L27/24
Filed: 2017-07-04
Granted: 2021-06-01
Abstract: 本文所揭示之標的可關於用以例如執行切換功能的相關電子材料之製造。在實施例中，相關電子材料可使用源自用以製造鄰近結構（諸如，導電基板或導電覆蓋層）之一或更多種前驅物的摻雜物種摻雜。
Patent TW-I647350-B (TW)
Inventor: ONG CHING-LONG
IPC: D01D10/02
Filed: 2017-07-19
Granted: 2019-01-11
Abstract: 本發明碳纖維絲束成形裝置及碳纖維絲束成形方法，是在碳化纖維絲束時，使用感應加熱及微波加熱之方式，使纖維絲束的外部及內部都可受到均勻的加熱，並且，本發明於微波加熱後進行雷射加熱之步驟，能夠針對纖維絲束內部進行加熱，均勻碳化石墨化的功能，並藉後續半熟化含浸纖維束階段予以捲收；本發明感應加熱及微波加熱之方式能夠使纖維絲束整體均勻碳化，且相較傳統加熱之方式所耗費的時間短，不僅使纖維絲束外部及內部得以均勻碳化，更使整體纖維絲束碳化的速度加快。
Patent TW-I651334-B (TW)
Title: 氟聚合物及包含氟聚合物（ii）的膜
Inventor: ONYEMAUWA FRANK OKEZIE
IPC: B01D71/32
Filed: 2017-08-07
Granted: 2019-02-21
Abstract: 本發明揭示一種共聚物、由該共聚物製備之多孔膜及一種使用該等多孔膜將金屬離子例如自微電子行業中產生之流體移除來處理流體的方法，其中該共聚物包括單體單元I及單體單元II，其中單體單元I具有式A-X-CH 2 -B，其中A為Rf-(CH 2 )n，Rf為式CF 3 -(CF 2 ) x -之全氟烷基，其中x為3-12，n為1-6，X為O或S，且B為乙烯基苯基，且單體單元II為乙烯基吡啶。
Patent TW-I646424-B (TW)
Inventor: CHEN KUAN-JU
IPC: G06F12/02
Filed: 2017-08-09
Granted: 2019-01-01
Abstract: 一種智慧型磁碟重組方法與智慧型磁碟重組系統。智慧型磁碟重組方法用以重組一磁碟。磁碟儲存數個檔案。智慧型磁碟重組方法包括以下步驟：記錄各個檔案之一呼叫次數及最近呼叫時間。依據各個檔案之呼叫次數及最近呼叫時間，計算一權重。依據權重，獲得一重組順序。磁碟係依據重組順序進行重組。
Patent TW-I650000-B (TW)
Title: 對視訊進行解碼的裝置
Inventor: LEE TAMMY
IPC: H04N19/593
Filed: 2012-10-29
Granted: 2019-02-01
Abstract: 用於對視訊進行畫面內預測的方法與裝置。所述方法包含：判定用於當前區塊的畫面內預測的預定數目的鄰近像素的可用性；若第一鄰近像素不可用，則藉由基於所述第一鄰近像素在預定方向上搜尋所述預定數目的鄰近像素來搜尋可用的第二鄰近像素；以及將所述第一鄰近像素的像素值替換為所發現的第二鄰近像素的像素值。藉由使用預定方向上的緊鄰像素來依序替換並不可用且排除處於預定位置的第一鄰近像素的處於另一位置的至少一個第三鄰近像素。
Patent TW-I663818-B (TW)
Inventor: LEE YUNG-CHOU
IPC: H02M1/42
Filed: 2017-08-28
Granted: 2019-06-21
Abstract: 本發明提供一種可動態調整回授補償的切換式電源供應器，包括一第一切換元件、一微控制器及一動態補償電路。第一切換元件，將輸入電壓轉換成所需的輸出電壓。微控制器，控制該第一切換元件的電壓轉換作業，還包括一電壓回授端及一補償控制端。動態補償電路，還包括一第一電阻、一電容、一第二電阻及一第二切換元件。其中，當該微控制器被啟動時，第二切換元件不導通，待該電壓回授端的電壓達到一預設電壓值，該補償控制端通過第二切換元件的控制端而驅動第二切換元件導通。
Patent TW-I730165-B (TW)
Title: Semiconductor structure and method of fabricating the same
Inventor: SUNG TA WEI
IPC: H01L21/302
Filed: 2017-09-06
Granted: 2021-06-11
Abstract: A method of fabricating a semiconductor structure is provided. The method includes forming a sacrificial gate structure, depositing a dielectric material and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.
Patent TW-I745483-B (TW)
Inventor: MIWA MASAHIRO
IPC: C23C14/34
Filed: 2017-11-10
Granted: 2021-11-11
Abstract: A divided sputtering target (1) according to one aspect of the embodiment is a divided sputtering target (1) formed by bonding a plurality of target materials (10) to a substrate (20), wherein among a dividing part (40) formed by arranging the plurality of target materials (10) spaced apart at an interval, flat surfaces (12) are respectively formed in at least a part of side surfaces (11) of a pair of target materials (10) arranged in at least a part of the dividing part (40), and as for the interval between the flat surfaces (12) facing each other in the dividing part (40), the interval (Lt) of the portion farthest to the substrate (20) is larger than the interval (Lb) of the portion closest to the substrate (20), and the surface roughness Ra of the flat surface (12) is 0.3μm or less.
Patent TW-I656594-B (TW)
Title: 基板處理裝置
Inventor: FENG CHUAN-CHANG
IPC: B05C5/02
Filed: 2017-12-05
Granted: 2019-04-11
Abstract: 基板處理裝置包括一底座、一基板載台、複數升降式主收集件、一第一動力件和一升降控制件。基板載台可旋轉得和底座連接，用以固定和旋轉基板。複數升降式主收集件設於基板載台外圍，用以收集處理基板的處理液。各個升降式主收集件包括一升降軸和一處理液收集環。升降軸包括一升降輪組件。升降輪組件用以帶動升降軸升降。處理液收集環連接升降軸之上。第一動力件設於底座，用以提供動力給升降式主收集件，以使升降式主收集件升降。升降控制件連接第一動力件，以控制第一動力件傳遞動力給升降式主收集件之升降軸對應之升降輪組件。
Patent TW-I627651-B (TW)
Title: 波紋片式壓力開關
Inventor: TSAY KWEI CHI
IPC: H01H35/32
Filed: 2018-01-18
Granted: 2018-06-21
Abstract: 本發明係提供一種波紋片式壓力開關，係包括：本體，係為一中空管體，其一端具有一流體入口；壓力傳遞單元，係設置於該本體內部，該壓力傳遞單元係具有一導桿、一預力螺旋與一彈簧組，該導桿係穿透該預力螺旋與該彈簧組，該導桿朝向該流體入口之一端係具有一直徑大於該導桿之活塞，該活塞與該流體入口間之本體空間定義一流體空間，該導桿中段具有一徑向延伸之環形部，該預力螺旋係鎖固於該中空管體之內壁面，該彈簧組兩端分別推頂該預力螺旋與該環形部；微動開關單元，係設置於該中空管體相對於該流體入口之一端；以及複數波紋片，係層疊套設於該活塞不朝向該流體入口之一端，並與該中空管體永久固定。
Patent TW-I808958-B (TW)
Title: 涉及二芳基巨環化合物之組合療法
Inventor: CUI JINGRONG JEAN
IPC: A61K31/519
Filed: 2018-01-24
Granted: 2023-07-21
Abstract: 本發明係關於一種使用二芳基巨環與至少一種其他癌症治療劑(諸如EGFR抑制劑)組合來治療癌症之方法及組合物。
Patent TW-I681465-B (TW)
Inventor: LEE YUEH-CHUAN
IPC: H01L21/50
Filed: 2018-02-12
Granted: 2020-01-01
Abstract: A method for forming an integrated circuit (IC) package is provided. In some embodiments, a semiconductor workpiece comprising a scribe line, a first IC die, a second IC die, and a passivation layer is formed. The scribe line separates the first and second IC dies, and the passivation layer covers the first and second IC dies. The first IC die comprises a circuit and a pad structure electrically coupled to the circuit. The pad structure comprises a first pad, a second pad, and a bridge. The bridge is within the scribe line and connects the first pad to the second pad. The passivation layer is patterned to expose the first pad, but not the second pad, and testing is performed on the circuit through the first pad. The semiconductor workpiece is cut along the scribe line to individualize the first and second IC dies, and to remove the bridge.
Patent TW-I714830-B (TW)
Title: Management method of metadata and memory device using the same
Inventor: HSIEH CHENG-KUANG
IPC: G06F12/16
Filed: 2018-02-13
Granted: 2021-01-01
Abstract: A metadata management method for a memory device is disclosed. The management method includes generating a virtual address layer in a memory space of a non-volatile memory of the memory device, establishing a mapping table on the virtual address layer to store at least a metadata corresponding to at least a storing block, wherein the at least a storing block includes at least a real address and the at least a real address is related to the memory space, writing at least a datum to at least a memory block of the memory space according to the at least a real address when writing the at least a datum to the memory device, and updating the at least a metadata of the at least a storing block when finishing writing the at least a datum.
Patent TW-I703667-B (TW)
Inventor: GLINSNER THOMAS
IPC: H01L21/68
Filed: 2018-03-02
Granted: 2020-09-01
Abstract: The invention relates to a method for bonding at least three substrates (4o, 4u, 4, 4’, 4”, 4”’, 4o’) to form a substrate stack (9, 9’, 9”), wherein the substrate stack (9, 9’, 9”) has at least one lowermost substrate (4u, 4), a middle substrate (4o, 4’), and an upper substrate (4o’, 4”), comprising the following steps: - aligning the middle substrate (4o, 4’) to the lowermost substrate (4u, 4) and bonding the middle substrate (4o, 4’) to the lowermost substrate (4u, 4), then aligning the upper substrate (4o’, 4”) and bonding the upper substrate (4o’, 4”) to the middle substrate (4o, 4), wherein the upper substrate (4o’, 4”) is aligned to the lowermost substrate (4u, 4).
Patent TW-I761481-B (TW)
Inventor: SATOU MASAKI
IPC: C09D183/04
Filed: 2018-03-29
Granted: 2022-04-21
Abstract: An object of the present invention is to provide a coating material for a coated metal plate which is hard to cause rain stripe stain on the surface and has high scratch resistance, wherein the coating material has a high storage stability and less contaminates a heating device. 
 
     The coating material includes a silicone resin containing 5 to 50 mol% of silanol groups based on the total number of moles of Si atoms.
Patent TW-I725312-B (TW)
Title: 曲面玻璃熱成型設備及其方法
Inventor: LI QINGWEN
IPC: C03B23/03
Filed: 2018-05-25
Granted: 2021-04-21
Abstract: 本發明係為一種曲面玻璃熱成型設備及其方法，所述曲面玻璃熱成型設備包括具有進料口和出料口的爐體，爐體包括加熱段、成型段以及降溫段，且爐體內設置有能夠旋轉且用於依次向加熱段、成型段和降溫段迴圈傳送玻璃的轉動盤，轉動盤上設置有用於承載玻璃的多個母模以能夠與成型段中的公模配合而對玻璃壓合成型，加熱段上設置有能夠與母模配合而直接對玻璃的所需曲面成型部分進行局部加熱的加熱結構，在加熱段中由於通過加熱結構對玻璃的所需曲面成型部分進行局部加熱，從而提高了對於玻璃的加熱效率，進而能夠進一步提高對玻璃的曲面成型作業效率。
Patent TW-I675566-B (TW)
Title: 一種確定校驗矩陣的方法及裝置、電腦存儲介質
Inventor: WANG JIAQING
IPC: H04L1/00
Filed: 2018-05-31
Granted: 2019-10-21
Abstract: 本發明公開了一種確定校驗矩陣的方法及裝置、電腦存儲介質，用以提供適用於5G系統的高吞吐、低延遲的LDPC的校驗矩陣的構造方案。本發明實施例提供的一種確定校驗矩陣的方法，包括：確定低密度同位碼LDPC矩陣的基礎圖base graph；根據該LDPC矩陣的base graph，確定LDPC的校驗矩陣。
Patent TW-I661126-B (TW)
Title: Valve and fluid control device
Inventor: TANAKA NOBUHIRA
IPC: F04B43/00
Filed: 2018-06-05
Granted: 2019-06-01
Abstract: 本發明之閥之特徵在於具備：第1板(10)，其具有第1貫通孔(100)；第2板(20)，其具有不與第1貫通孔(100)對向之第2貫通孔(210)；閥室(55)，其由第1板(10)與第2板(20)包圍而成；及閥體(30)，其配置於閥室(55)，具有不與第1貫通孔(100)對向而與第2貫通孔(200)對向之第3貫通孔(300)，且於第1板(10)與第2板(20)之間上下移動。再者，第2貫通孔(210)之第2開口面積小於第3貫通孔(300)之第3開口面積，第2貫通孔(210)於前視時配置於第3貫通孔(300)內。
Patent TW-I694656-B (TW)
Inventor: CHUANG YING CHUN
IPC: H02J7/10
Filed: 2018-06-12
Granted: 2020-05-21
Abstract: 本發明係有關於一種交錯型無線高頻脈衝式蓄電池充電器，其主要係具有電路簡單、成本低、體積小與充電速度快等優點，且能讓線圈間傳輸時能夠達到最大輸出電流，並可降低開關的切換損失，提升整體效率，又可以降低二極體的切換損失，同時亦能達到交錯充電的功能，讓蓄電池模組有足夠的時間充分休息，以延長蓄電池的使用壽命，而在其整體施行使用上更增實用功效特性者。
Patent TW-I713237-B (TW)
Title: Led package structure
Inventor: LIN CHEN HSIU
IPC: H01L23/488
Filed: 2018-08-01
Granted: 2020-12-11
Abstract: The present disclosure provides an LED package structure, which includes an LED frame, a driving frame assembly, a housing, a plurality of LED chips, a driving chip, and a light-permeable compound. The LED frame includes a carrying segment and two bending pins connected to the carrying segment. The driving frame assembly includes two lateral frames each having a functional segment and a bending pin. The housing has an accommodating slot exposing the carrying segment and the two functional segments. The bending pins protrude from a lateral surface of the housing to a bottom surface of the housing. The LED chips are fixed on and electrically connected to the carrying segment. The driving chip is fixed on one of the two functional segments, and is electrically connected to the other functional segment. Each of the LED chips is electrically connected to the driving chip for being driven to emit light. The light-permeable compound is filled in the accommodating slot to embed the LED chips and the driving chip.
Patent TW-I762701-B (TW)
Title: 用於在非獨立配置中經由交叉rat信號傳遞進行功率管理的技術和裝置
Inventor: HE LINHAI
IPC: H04W52/02
Filed: 2018-08-09
Granted: 2022-05-01
Abstract: 本案內容的某些態樣大體而言係關於無線通訊。在一些態樣中，一種用於與第一無線電存取技術（RAT）相關聯的無線通訊的第一基地站可以產生用於使得使用者設備進行以下操作的訊息：從功率節省狀態中甦醒或者重新配置與功率節省狀態相關聯的週期，其中該訊息包括關於使用者設備要從功率節省狀態中甦醒或者要重新配置該週期的指示；及/或經由與第二RAT和使用者設備相關聯的第二基地站來向使用者設備傳輸該訊息，以使得使用者設備從功率節省狀態中甦醒或者重新配置該週期。提供了大量其他態樣。
Patent TW-I687415-B (TW)
Inventor: SHI BING
IPC: A61P31/18
Filed: 2018-08-15
Granted: 2020-03-11
Abstract: 本發明係關於化合物 N 
-(( S 
)-1-(3-(4-氯-3-(甲基磺醯胺基)-1-(2,2,2-三氟乙基)-1H-吲唑-7-基)-6-(3-甲基-3-(甲磺醯基)丁-1-炔-1-基)吡啶-2-基)-2-(3,5-二氟苯基)乙基)-2-((3bS,4aR)-5,5-二氟-3-(三氟甲基)-3b,4,4a,5-四氫-1H-環丙并[3,4]環戊并[1,2-c]吡唑-1-基)乙醯胺之醫藥上可接受之鹽、共晶體及其晶型，其可用於治療逆轉錄病毒科( Retroviridae 
)病毒感染(包括由HIV病毒引起之感染)。
Patent TW-I782080-B (TW)
Title: Use of catalyst for nuclear hydrogenation reaction
Inventor: MIZUSAKI TOMOTERU
IPC: C07C211/35
Filed: 2018-08-28
Granted: 2022-11-01
Abstract: This invention provides a catalyst for nuclear hydrogenation reaction having a catalytic activity superior to that of a conventional ruthenium catalyst in the nuclear hydrogenation reaction of an aromatic compound with one or more amino groups bonded to an aromatic ring. Provided is a catalyst for nuclear hydrogenation reaction used in a nuclear hydrogenation reaction for hydrogenating at least one of the π bonds for the a romatic ring of the aromatic compound with one or more amino groups bonded to an aromatic ring, which comprises a carrier and catalyst particles carried on the carrier, wherein the catalyst particles contain Ru (0 valence) and Ru oxide, and the ratio RRu (atom%) of Ru (0 valence) and the ratio RRuOx (atom%) of Ru oxide in the analysis 
area for the vicinity of surface measured by X-ray photoelectron spectroscopy analysi s method (XPS) satisfy the condition of equation (1), 0.60 ≦ {RRuOx/(RRuOx+RRu)} ≦ 0.90.
Patent TW-I689828-B (TW)
Title: 資料統計方法和裝置
Inventor: Wang hua-zhong
IPC: G06Q30/00
Filed: 2018-08-31
Granted: 2020-04-01
Abstract: 本說明書實施例提供一種資料統計方法和裝置，其中方法包括：對應於每個資料標識生成第一參數和第二參數；若資料標識對應的第一資料不參與資料統計，則第二參數等於第一參數，否則，第二參數是根據第一參數和第一資料計算得到；將每個資料標識以及對應的第一參數和第二參數發送至合作資料方；接收合作資料方返回的合作方計算值，所述合作方計算值是合作資料方根據選擇的第一參數或第二參數得到；由合作方計算值中去除各個第一參數的計算值，得到所需要的統計值。
Patent TW-I782118-B (TW)
Title: Dibenzofurans and dibenzothiophenes
Inventor: USHAKOV DMITRY
IPC: C07D333/76
Filed: 2018-10-18
Granted: 2022-11-01
Abstract: The present invention relates to dibenzofurans and dibenzothiophenes of formula I 
in which the occurring groups and parameters have the meanings as indicated in claim 1, to liquid-crystalline media comprising same and to high-frequency components comprising these media, especially microwave components for high-frequency devices, such as devices for shifting the phase of microwaves, in particular for microwave phased-array antennas.
Patent TW-I679462-B (TW)
Title: 減少了光暈現象的相機透鏡用間隔件及其製造方法
Inventor: LEE SEUNGHAN
IPC: G03B17/12
Filed: 2018-10-26
Granted: 2019-12-11
Abstract: 本發明關於減少了光暈現象的相機透鏡用間隔件及其製造方法。該間隔件包含膜基材及塗覆在膜基材兩面的遮光層，遮光層包含底塗層和對於100重量份聚氨酯系黏結劑混合10~25重量份滑劑、3~5重量份黑色油性染料、200~300重量份有機溶劑而塗覆在底塗層表面的黑色塗層，貫穿膜基材和遮光層而形成中空部以使光向相機透鏡前進，誘發光暈現象的膜基材的中空部內側面藉由鹼性溶液經過了腐蝕處理。該間隔件的製造方法包含形成底塗層的第1次塗覆階段、形成黑色塗層的第2次塗覆階段、穿孔階段、使膜基材的中空部內側面腐蝕的腐蝕階段及乾燥階段。
Patent TW-I681612-B (TW)
Title: Power controller with frequency jittering, and control method thereof
Inventor: TSOU MING CHANG
IPC: H02M1/44
Filed: 2018-12-14
Granted: 2020-01-01
Abstract: Disclosed is a power controller for use of a power converter with an inductive device, in order to provide an output power. The power controller has a PWM signal generator and a jittering generator. The PWM signal generator controls a power switch to generate consecutive switching cycles. In each switching 
cycle, the PWM signal generator controls a peak for regulating the output power, where the peak represents an inductor current through the inductive device. The jittering generator is connected to the PWM signal generator to change the peak, and makes a peak difference between two consecutive peaks, where the peak difference has a sign and a magnitude. The jittering generator causes the sign of the peak difference being changed switching cycle by switching cycle.
Patent TW-I702302-B (TW)
Title: 濺鍍方法
Inventor: GUO BING-LIANG
IPC: C23C14/34
Filed: 2018-12-26
Granted: 2020-08-21
Abstract: 本發明提供一種濺鍍方法，其包括至少一次濺鍍程序，該濺鍍程序包括：第一預濺鍍階段，將靶材材料濺鍍在用於遮擋晶片的擋板上；第二預濺鍍階段，將靶材材料的化合物濺鍍在擋板上；主濺鍍階段，將靶材材料的化合物濺鍍在晶片上；其中，第一預濺鍍階段用於調節主濺鍍階段的濺鍍電壓值。該濺鍍方法可解決“靶中毒”的問題和製程組件的阻抗變化的問題，並且還可以減小濺鍍電壓的波動範圍，從而可以提高薄膜厚度和薄膜品質的穩定性。
Patent TW-I669462-B (TW)
Title: 利用多重虛像產生立體燈光效果的燈具裝置
Inventor: LIN MING-FENG
IPC: F21W107/10
Filed: 2018-12-27
Granted: 2019-08-21
Abstract: 一種利用多重虛像產生立體燈光效果的燈具裝置，包含一反射單元，以及一發光單元。該反射單元包括能將光線往另外一者反射的一第一反射組與一第二反射組。該第一反射組對於波長為550nm至800nm的光線的反射率實質上為70%以上。該第二反射組對於波長為460nm至700nm的光線的反射率實質上為50%～75%。該發光單元能產生投射往該第一反射組或該第二反射組的光線。該第一反射組能減緩光線能量的衰減速率而能提高虛像的成像數量，改善虛像成像數量不足的問題，且該第一反射組與該第二反射組對於不同顏色的可見光的反射效果均佳，適用範圍廣。
Patent TW-I693069-B (TW)
Title: Use of kirenol for manufacturing compositions for treating acute lung injury
Inventor: KUAN YU HSIANG
IPC: A61K31/05
Filed: 2019-02-14
Granted: 2020-05-11
Abstract: The invention relates to a use of kirenol for manufacturing compositions for treating acute lung injury. It comprises administrating an effective dose of kirenol to a subject in need for reducing hyaline membrane formation, neutrophil infiltration, lung edema and oxidative stresses so as to achieve efficacy of treating acute lung injury.
Patent TW-I723343-B (TW)
Inventor: SHIH CHENG-HUNG
IPC: H01L29/86
Filed: 2019-02-19
Granted: 2021-04-01
Abstract: 一種具立體電感之半導體結構具有一第一橫向電感、一縱向電感及一第二橫向電感，該第一橫向電感形成於一第一基板，該第二橫向電感及該縱向電感形成於一第二基板，接合該第一基板及該第二基板以連接該第一橫向電感及該縱向電感，使該第一橫向電感、該縱向電感及該第二橫向電感構成一立體電感。
Patent TW-I714982-B (TW)
Title: 浴室乾燥機
Inventor: TAKEI TOSHITAKE
IPC: F24F7/04
Filed: 2019-03-14
Granted: 2021-01-01
Abstract: 浴室乾燥機(1)具備：本體(2)，其具有產生空氣流的送風機；板金框體(8)，其具有在浴室乾燥機(1)被設置於開口(20)的設置狀態中朝向下方的下面(23)，包圍住本體(2)；框材(16)，其安裝於建材，固定板金框體(8)。在下面(23)設置在設置狀態中較下面(23)更向下方突出的突起部(27)。
突起部(27)當中作為在設置狀態中的屋內側之面的第1面(31)係與框材當中朝向屋外之面(16a)平行。
Patent TW-I714996-B (TW)
Title: Folded fractionation column and process
Inventor: NOWAK BRIAN J
IPC: B01D3/32
Filed: 2019-03-27
Granted: 2021-01-01
Abstract: An apparatus and process doubles the number of trays in a single fractionation column. A dividing wall is used to isolate a first side from a second side and fractionation on trays on each side is independent of the other. A transition vapor stream is ducted from a top of a first side to the bottom of the second side, and a transition liquid stream is ducted from a bottom of the second side to the top of the first side.
Patent TW-I699825-B (TW)
Title: Semiconductor devices and methods for forming the same
Inventor: CHEN CHING-YI
IPC: H01L29/78
Filed: 2019-04-08
Granted: 2020-07-21
Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.
Patent TW-I718533-B (TW)
Inventor: LEE MEI JING
IPC: A61K31/519
Filed: 2019-05-10
Granted: 2021-02-11
Abstract: 本發明提供ribociclib及其鹽的製備方法以及ribociclib succinate之新穎結晶型，本發明簡化製程，提高產率，且於粗產品階段時ribociclib之純度即可達API品質的要求，無須再進行純化，而本發明之ribociclib succinate之結晶型具有優異的儲存穩定性。
Patent TW-I728364-B (TW)
Inventor: CHANG EDWARD YI
IPC: H01L21/24
Filed: 2019-05-21
Granted: 2021-05-21
Abstract: 一種氮化鎵異質整合於矽基板之半導體結構及其製造方法，乃於矽（100）基板上製作百奈米級孔洞，再利用濕蝕刻使矽基板之（111）晶面暴露，並以此（111）晶面作為氮化鋁緩衝層和氮化鎵的成核表面，且在氮化鎵成長時同時通入矽烷以調控矽原子於氮化鎵中的摻雜濃度，從而獲得理想之氮化鎵異質整合於矽基板之半導體結構，藉以應用於矽金屬氧化物半導體場效應電晶體元件，解決因元件持續微縮所產生之崩潰問題。
Patent TW-I687828-B (TW)
Inventor: LIN YING-DAR
IPC: G06F21/55
Filed: 2019-05-31
Granted: 2020-03-11
Abstract: 本發明揭露了一種藉由從封包追蹤到擴展有限狀態機的逆向工程的自動協議測試方法。該方法包括以下步驟：解析複數個封包以萃取複數個會話；進行關鍵字分析和分群演算法以獲得協議訊息；初始化協議訊息並合併等效狀態以獲得有限狀態機；萃取協議訊息的欄位和值以獲得複數個子資料集，並在有限狀態機上添加資料保護和記憶體集以獲得擴展有限狀態機。
Patent TW-I708126-B (TW)
Inventor: HSIEH FU CHUN
IPC: G03F7/20
Filed: 2019-06-25
Granted: 2020-10-21
Abstract: 本揭露描述處理半導體製造設備中之流體洩漏的洩漏處理裝置與方法。半導體製造設備可包含微影設備，此微影設備具有配置以承托基材之固定座、以及配置以配送塗料於基材之一或多個區域上的光阻進料器。光阻進料器可包含配置以輸出塗料之光阻筒、與光阻筒流體連接之導管、以及設於固定座之上的流體洩漏處理裝置，其中導管可配置以流體傳輸塗料並循環冷卻劑，流體洩漏處理裝置可配置以檢測來自導管的流體洩漏。