Patent SG-11201805567V-A (SG)
Title: Tin-containing dopant compositions, systems and methods for use in ion implantation systems
Inventor: REINICKER AARON
IPC: H01J37/317
Filed: 2016-12-22
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110111011111011110111111101111101111011111 International Bureau ... .... ..Yj (10) International Publication Number ......,,.../ (43) International Publication Date WO 2017/116945 Al 6 July 2017 (06.07.2017) WI P0 I P CT (51) International Patent Classification: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, H01J 37/317 (2006.01) C23C 14/48 (2006.01) KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, COIF 7/22 (2006.01) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NE NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (21) International Application Number: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, PCT/US2016/068206 TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (22) International Filing Date: ZA, ZM, ZW. 22 December 2016 (22.12.2016) (84) Designated States (unless otherwise indicated, for every (25) Filing Language: English kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, (26) Publication Language: English TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (30) Priority Data: TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, 62/273,642 31 December 2015 (31.12.2015) US DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, 15/386,308 21 December 2016 (21.12.2016) US LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, (71) Applicant: PRAXAIR TECHNOLOGY, INC. [US/US]; GW, KM, ML, MR, NE, SN, TD, TG). 10 Riverview Drive, Danbury, CT 06473 (US). Declarations under Rule 4.17: (72) Inventors: REINICKER, Aaron; 347 Maryland Street, — as to applicant's entitlement to apply for and be granted a Buffalo, NY 14201 (US). SINHA, Ashwini, K.; 72 Planta- tion Court, East Amherst, NY 14051 (US). GUO, Qiong; patent (Rule 4.17(0) 5538 Meadowglen Drive, Clarence Center, NY 14032 — as to the applicant's entitlement to claim the priority of the (US). earlier application (Rule 4.17(iii)) Agents: DALAL, Nilay, S. et al.; Praxair, Inc., 10 River- Published: (74) view Drive, Danbury, CT 06810 (US). — with international search report (Art. 21(3)) Designated States (unless otherwise indicated, for every _ before the expiration of the time limit for amending the (81) kind of national protection available): AE, AG, AL, AM, claims and to be republished in the event of receipt of AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, amendments (Rule 48.2(h)) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, Title: TIN-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS FOR USE IN ION IMPLANTATION (54) . SYSTEMS Dual port valve Dual port valve Dual port valve R-- Use port Fill port v ie- Use port Effiport Fill port & r Use port Check valve a Check valve Chalk valve COrider -''' Cylinder Cylinder-1& 0 -4 \" - -Sn containing dopant material @ Sn containing Adsorbent with Sn dopant material dopant material gas phase liquid 1-1 Case 1 Case 2 Case 3 .4 kin FIG. 4a FIG. 4b FIG. 4c 71' Examples of storage and Examples of storage and Examples of storage and 01 delivery package for three delivery package for three delivery package for three separate states of Sn separate states of Sn separate states of Sn 1-1 dopant source dopant source dopant source 1-1 ---..„ IC - - 1-1 C (57) : A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A ei suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include en. ) stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably de - .,- livered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.