baber/WOPTO huggingface dataset:
Patent TW-450809-B (TW)
Title: Pharmaceutical compositions for preventing or treating prostatic cancer comprising benzoquinolin-3-one derivatives
Inventor: AUDIA JAMES EDMUND
IPC: A61P13/08
Filed: 1996-03-15
Granted: 2001-08-21
Abstract: A pharmaceutical composition for preventing the development of prostatic cancer in a patient at risk of developing such cancer, or preventing or treating the metastasis to bone of prostatic cancer; comprising a compound selected from the group consisting of (-)-(4aR)-(10bR)-8-chloro-4-methyl-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]quinolin-3-one; (+)-(4aR)-(10bR)-8-chloro-4,10b-dimethyl-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]quinolin-3-one; 8-chloro-4,10b-dimethyl-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]-quinolin-3-one; (+)-(4aR)-(10bR)-8,9-dichloro-4,10b-dimethyl-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]quinolin-3-one; (+)-(4aR)-(10bR)-4,10b-dimethyl-8-(2-phenylethyl)-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]quinolin-3-one; (+)-(4aR)-(10bR)-8-benzylthio-4,10b-dimethyl-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]quinolin-3-one; (+)-(4aS)-(10bS)-8-chloro-4-methyl-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]quinolin-3-one; or (+)-(4aR)-(10bR)-4-methyl-8-(4-ethyl-2-benzothiazolylthio)-10b-methyl-1,2,3,4,4a,5,6,10b-octahydrobenzo[f]quinolin-3-one; or a pharmaceutical acceptable salt thereof.
Patent TW-342514-B (TW)
Title: Cathode for electron tube
Inventor: KYU-NAM JU
IPC: H01J29/04
Filed: 1996-04-09
Granted: 1998-10-11
Abstract: A cathode for an electron tube, which comprises a base metal containing nickel as a major component, and an electron-emissive material layer which is formed on the base metal and comprises an alkaline earth metal oxide including barium oxide as its main component, in which the electron-emissive material layer further comprises a lanthanum-magnesium-manganese oxide.
Patent TW-356568-B (TW)
Title: An improvement method for planarization between metal layers
Inventor: Yu zhen-hua
IPC: H01L21/31
Filed: 1996-05-31
Granted: 1999-04-21
Abstract: A kind of improvement method for planarization between metal layers, it comprises: a step for definition forming metal layers on wafer; a step for forming a first oxidized layer by sedimentation; a step for overlay SOG glass layer and corresponding etch-back, making the roof of metal layers to exclude SOG glass; a step forming second oxidized layer by sedimentation; and a step forming PE-TEOS by sedimentation; a process for forming a better planarization and method of planarization good electric air characteristics.
Patent TW-444006-B (TW)
Title: Pyrocarbonic acid diesters and the preparation and use thereof
Inventor: ZAMBOUNIS JOHN
IPC: C09B57/00
Filed: 1996-07-09
Granted: 2001-07-01
Abstract: The invention relates to the preparation of pyrocarbonic acid diesters by an improved process and to the novel pyrocarbonic acid diesters prepared according to said process as well as to the use thereof. The core of the invention is a process for the preparation of a pyrocarbonic acid diester of formula (I) wherein R1 and R1' are each independently of the other branched or straight-chain C1-C24alkyl, C3-C24alkenyl, C3-C24alkynyl, C4-C12cycloalkyl, C4-C12cycloalkenyl or C7-C24aralkyl, each of which is unsubstituted or substituted by one or more than one substituent which is inert under the reaction conditions, by reacting at least one ester carbonate of formula (II) with 40-50 mol% of a sulfochloride of formula (IV) in the presence of 0.8-5 mol% of a catalyst of formula (V) and with minor amounts of a heterocyclic aromatic amine in a nonpolar inert solvent, in which process the amount of heterocyclic aromatic amine is 1-3 mol% and the reaction is carried out in the temperature range from -10 DEG C to +25 DEG C, all molar amounts being based on 100 mol% of ester carbonate of formula (II).
Patent TW-416950-B (TW)
Title: Preparation of n-substituted 3-hydroxypyrazoles
Inventor: KOENIG HARTMANN
IPC: C07D231/22
Filed: 1996-07-11
Granted: 2001-01-01
Abstract: N-substituted 3-hydroxypyrazoles of the formula I, where R1 is unsubstituted or substituted alkyl, aryl or heteroaryl and R2, R3 is hydrogen, cyano, halogen or unsubstituted or substituted alkyl, aryl or heteroaryl, are prepared by oxidation of a corresponding pyrazolidin-3-one.
Patent TW-440579-B (TW)
Title: Method for purifying polyalkysiloxanes
Inventor: HENDERSON DANNY LEE
IPC: C03B19/14
Filed: 1996-09-09
Granted: 2001-06-16
Abstract: The present invention is directed to a purified polyalkylsiloxane composition having a boiling point, under atmospheric conditions, of less than 250 DEG C and containing high boiling impurities, including siloxanes and silanol-terminated siloxanes, that have boiling points, under atmospheric conditions, of greater than about 250 DEG C in a total concentration of less than 14 ppm. The present invention is further directed to a method of producing said purified polyalkylsiloxane composition by distilling a polyalkylsiloxane starting material containing high boiling impurities having a boiling point, under atmospheric conditions, of greater than 250 DEG C in a total concentration of less than 14 ppm.
Patent TW-344882-B (TW)
Title: Process for producing cylindrical poly-silicon module
Inventor: YINQ TZER-LIANQ
IPC: H01L21/70
Filed: 1997-01-13
Granted: 1998-11-11
Abstract: A process for producing a cylindrical poly-silicon module applied in a DRAM in a semiconductor IC, in which the cylindrical poly-silicon module comprises a silicon substrate, a field oxide layer, an oxide layer, a silicon nitride layer and a cylindrical poly-silicon, the process comprising the following steps: (a) depositing an oxide layer on the surface of the silicon nitride layer by using a chemical vapor deposition; (b) defining a cylindrical contact pattern of the oxide layer; (c) depositing a poly-silicon layer; (d) covering the surface of the poly-silicon with a dielectric layer; (e) etching back and forming a spin glass plug; (f) forming a sacrificial layer by using a deposition method; (g) etching back the sacrificial layer and the poly-silicon under conditions where the etch rate of the sacrificial layer and the etching rate of the poly-silicon are equal; (h) removing the remaining sacrificial layer and the spin glass plug and the remaining cylindrical oxide layer, and leaving the poly-silicon, thereby completing a cylindrical poly-silicon module.
Patent TW-313547-B (TW)
Title: Production method of a toilet seat which is made from ethylene-vinyl acetate
Inventor: LII HUANN-LIN
IPC: B29C51/20
Filed: 1997-01-21
Granted: 1997-08-21
Abstract: A production method of a toilet seat which is made from ethylene-vinyl acetate comprising the steps of: (a) feeding the flake-shaped material of ethylene-vinyl acetate; (b) softening the material by baking in an oven; (c) forming the material in a pair of cool match molds to complete a raw casting of toilet seat with extra material around the seat body; and (d) pouring away the extra material by pressing the raw casting with a pair of match dies exactly right along the outline of the seat body.
Patent TW-326584-B (TW)
Title: System for terminating the shield of high speed cables(7)
Inventor: PAUL MURPHY
IPC: H01R13/658
Filed: 1997-02-21
Granted: 1998-02-11
Abstract: A terminating assembly comprises: (1) A pair of cables(40), each one has an internal conductor(60), at least a portion of an inner dielectric layer(62) surrounding the internal conductor, at least a portion of metallic shield(64) surrounding the inner dielectric layer, at least a portion of outer insulating jacket(66) for wrapping the metallic shield, a portion of the outer jacket of each cable is removed to expose an exposed portion(64) of the metallic shield: (2) A terminal(32) onto which the metallic shield is going to be terminated, where at least a portion of the terminal is disposed inside an dielectric housing of an electric connector(10) and having a terminating portion(42); and(3) A gripping arm(50a) projecting form the terminating portion, and constructed for gripping at least a portion of the exposed portion of the metallic shield of each cable for letting the inner dielectric layer distortion not happen, where the gripping arm has a slot(48) for binding the exposed portion of the metallic shield onto the gripping arm.
Patent TW-427951-B (TW)
Title: Process for production of silicon carbide form material
Inventor: SAITO KAZUO
IPC: C04B35/573
Filed: 1997-04-16
Granted: 2001-04-01
Abstract: A process for producing a silicon carbide form material, which comprises converting a polycarbondized diimide resin into a form material of desired shape, carbonizing the form material, reacting the carbonized form material with silicon or a silicon-containing gas and, as necessary, forming a silicon carbide layer by CVD method on the resulting silicon carbide form material. The process can alleviate the problem of generating warpage when the high puritied and densitied silicon carbide form material is made into a thin film or the like.
Patent TW-342450-B (TW)
Title: Process and device for detecting IC heat fan
Inventor: HORNG MING-LIH
IPC: G01R31/00
Filed: 1997-05-05
Granted: 1998-10-11
Abstract: A process for detecting the operation status of an IC heat fan, which mainly comprises the following steps: (1) taking the armature current signal of a fan motor; (2) amplifying the differential signal of the current; (3) detecting a pulse signal; (4) determining whether the pulse signal of the step (3) is abnormal.
Patent TW-329038-B (TW)
Title: The manufacturing method for cap-shaped capacitor with rough surface
Inventor: WU SHYE-LIN
IPC: H01L21/70
Filed: 1997-06-19
Granted: 1998-04-01
Abstract: A manufacturing method for cap-shaped transistor with rough surface, which is formed on substrate, includes the following steps. - Deposit a doping polysilicon on substrate; - Pattern doping polysilicon to keep portion of doping polysilicon inside the pre-determined area of capacitor; - Deposit an undoped polysilicon on doping polysilicon and substrate; - Anisotropic etching undoped polysilicon into undoped polysilicon spacer, which is adjacent to doping polysilicon; - Selectively etch doping polysilicon and undoped polysilicon spacer by a H3PO4 solution to form crown node of capacitor with rough surface; - Dope the undoped portion of crown node of capacitor; - Form dielectric on crown node; - Form memory cell plate on dielectric.
Patent TW-375626-B (TW)
Title: Fluid composition for physiological separations with enhanced resistance to inward migration of substances requiring accurate dosage monitoring
Inventor: O'BRIEN WILLIAM L
IPC: C08L67/06
Filed: 1997-09-27
Granted: 1999-12-01
Abstract: A fluid comprising wherein an olefin-terminated polyester unmodified polyester and a polymerized alpha-olefin is provided which facilitates the separation of blood into light and heavy phases via centrifugation in a blood collection vessel. The fluid is useful as a component of a partitioning composition formulated to have appropriate specific gravity to be positioned intermediate the light and heavy blood phases during centrifugation. A partitioning composition including a fluid of the invention provides a particular advantage in blood collection vessels used in therapeutic drug monitoring, due to the relatively low affinity between the fluid component of the composition and commonly monitored classes of drugs.
Patent TW-350000-B (TW)
Title: Method of manufacturing nonwoven air filter and the product
Inventor: DAI HUA-XI
IPC: D06M10/00
Filed: 1997-10-28
Granted: 1999-01-11
Abstract: A sort of method of manufacturing nonwoven air filters, having the following steps, (1) feeding of plastic chips to the raw material tank in the extrusion machine, where the heater melt the plastic chips into solution, which is filtered by the filter to remove the impurities, before being injected by the quantitative pump from the quantitative nozzle; (2) continuous injection of the solution by means of quantitative injector to the collector, which comes with a bottom extractor for collection of the solution on the collector and be made into mesh; (3) feeding of the mesh through the conveyor to the coiling device passing by a static processing for the mesh to bear static charges for enhanced air filter efficiency in the suction; (4) feeding of the mesh through the conveyor to the coiling device for coiling.
Patent TW-363257-B (TW)
Title: Semiconductor integrated circuit apparatus and manufacturing method thereof
Inventor: ISHIZUKA HIROYASU
IPC: H01L27/02
Filed: 1997-11-05
Granted: 1999-07-01
Abstract: A kind of semiconductor integrated circuit apparatus and manufacturing method thereof which is to eliminate the difference of ESD durability caused by the polarization due to applying over voltage on the external connector and to improve the ESD durability for the over voltage of both the positive and negative sides of semiconductor integrated circuit apparatus. The method is to allocate the following components between the external connector and grounding which are the protection component of gate structure used for protection of internal circuit from the positive over voltage; and the protection component formed of diodes and used for protection of internal circuit from the negative over voltage.
Patent TW-405071-B (TW)
Title: Method for counting and displaying the network traffic utilization rate and apparatus thereof
Inventor: JIANG SHR-YAU
IPC: G06F11/34
Filed: 1997-11-11
Granted: 2000-09-11
Abstract: When a network system is transmitting data, the method and apparatus of the invention is used to count the network traffic utilization rate. At the same time, the network traffic utilization rate is displayed. When comparing with the traditional method for counting and displaying the network traffic utilization rate by software, this invention has the characteristics of smaller distortion delay and lower production cost. The apparatus generates a preset pulse signal according to the bandwidth of the network system and sets a basic count value for the network traffic. Said basic count value for the network traffic is the data traffic count proportional to the bandwidth of said network system. When counting the traffic utilization rate, the apparatus of the invention receives the signal from the network physical layer and counts the number of times as said signal is equal to the basic traffic count value during every preset pulse signal. According to said number of times, the traffic utilization rate is acquired. While said traffic utilization rate is displayed, one current traffic utilization rate during the current pulse signal is compared to one previous traffic utilization rate during the previous pulse signal. According to the result of the comparison, an output signal of the network traffic utilization rate is generated and sent to a display driver. Therefore, the display of said traffic utilization rate is more readable.
Patent TW-417224-B (TW)
Title: A method and an apparatus for forming semiconductor packages on a leadframe
Inventor: CHEW CHEE HIONG
IPC: H01L21/60
Filed: 1997-12-05
Granted: 2001-01-01
Abstract: Mould pieces (101) and (102) have packaging sections (107, 111 and 115) formed on a distribution channel (105) which is tapered such that inlets (106, 110 and 114) are wider for the packaging section (107) that is closer to the supply of mould compound provided from a main distribution channel (104), and narrower for the packaging section (115) that is further away from the main distribution channel (104) to equalise the pressure at which mould compound enters the packaging sections  (107, 111 and 115).  In addition, tapered interconnecting sections (109 and 113) have internal ridges (120 and 122) that form notches in the mouldings of these sections to allow these sections (109 and 113)  to be easily severed at the notch by a punch and die set to separate the packages formed by the packaging sections (107, 111 and 115).
Patent TW-512148-B (TW)
Title: Substituted tetrahydropyrimidine compounds, compositions containing same and methods using the compounds
Inventor: VOLODARSKY LEONID B
IPC: C08K5/3462
Filed: 1998-03-17
Granted: 2002-12-01
Abstract: The present invention is directed to substituted tetrahydropyrimidine derivatives of the general formula wherein R1, R2, R3, R4, R5, R6 and R7, which may be the same or different, are hydrogen or alkyl, aryl, cycloalkyl, alkaryl, aralkyl or heterocyclic, or substituted derivative thereof, R6 or R7 can additionally be -OH or -R8 wherein R8 is hydrogen, alkyl, aryl, cycloalkyl, alkaryl, aralkyl or heterocyclic, or substituted derivative thereof, or R6 and R7 together can be =0 or =NOH, and any two R groups on the same or adjacent carbon atoms can be joined in a cyclic configuration, and X is oxyl or hydroxy; it being provided that at least one of R2 and R3 and at least one of R4 and R5 are other than hydrogen.
Patent TW-449739-B (TW)
Title: Image pick-up method and apparatus using the image pick-up method
Inventor: YOKOI MAKOTO
IPC: H04N5/77
Filed: 1998-04-21
Granted: 2001-08-11
Abstract: An image pick-up apparatus is provided which can achieve a decrease in cost and in circuit size and a decrease in dissipation power. In a recording mode, YUV data of one frame output at a given period from a YUV signal processing circuit 11 is periodically written to a DRAM 14 through a DRAM transfer route via a DMA controller 12. The writing-in of YUV data of one frame is done by a predetermined map. The DMA controller 12 allows YUV data which is periodically developed onto the DRAM 14 to be read out/output from the YUV signal processing circuit 11 to a video encoder 15 in a way to correspond to the image map. Thus, in accordance with the periodic updating, on the DRAM 14, of image information picked up by a CCD 6, the video encoder 15 creates a video signal on the basis of automatically updated information and a current image can be displayed on a display device 16 without using a VRAM controller and VRAM.
Patent TW-395055-B (TW)
Title: Structure of read-only memory and the manufacturing method thereof
Inventor: SHIU SHING-REN
IPC: H01L27/105
Filed: 1998-06-22
Granted: 2000-06-21
Abstract: A structure of read-only memory and the manufacturing method thereof are disclosed. A shallow trench isolation (STI) structure is formed simultaneously on the peripheral circuit region and the memory cell region of the substrate. Next, a photoresist layer is covered on the peripheral circuit region, and an ion implantation process is proceeded by using the photoresist layer as a mask, so as to form the buried-in bit line array on the substrate region of the neighboring two shallow trench isolation (STI) structures in the memory cell region. Then, the shallow trench isolation (STI) structure in the memory cell region is removed, so as to form a plurality of grooves, and photoresist layer is removed. Then, a gate oxide with common shape is formed on the substrate. Next, a conductive layer is formed on the gate oxide, and filled up several grooves. Then, the conductive layer is defined, and at the same time, a word line is formed in the cell region, and a gate is formed on the peripheral circuit region.
Patent TW-474957-B (TW)
Title: Highly heat-resistant organo copolymers containing fumed silica
Inventor: KUO PING-LIN
IPC: C08G77/42
Filed: 1998-07-24
Granted: 2002-02-01
Abstract: Highly heat-resistant organo copolymers containing fumed silica fumed-silica contained polumerizable compounds are synthesized by reacting fumed-silica containing silanol groups at surface with the compounds which can react with the silianol groups at surface and contain unsaturated double bond or epoxide ring, with the structures as follows: these fumed-silica contained polymerzable compounds are copolymerized with the copolymerized monomer to form highly heat-rasistant fumed silica contained copolymer.
Patent TW-407337-B (TW)
Title: Semiconductor device and manufacture thereof
Inventor: MATSUO HIROSHI
IPC: H01L21/768
Filed: 1998-08-18
Granted: 2000-10-01
Abstract: This manufacturing method comprises the steps for forming a hard mask insulation layer 3 on a gate electrode 2 formed on a main surface of an Si substrate 1 via a gate insulation layer, forming a sidewall spacer 8 directly on a thin SiO2 layer 4 which covers the side face of the gate electrode 2, and forming a contact hole 7 which pierces through a layer insulation layer 6 formed on an SiN stopper layer 5 to the main surface of the Si substrate 1.
Patent TW-394720-B (TW)
Title: Holding material of ground workpiece
Inventor: SAKAGUCHI TATSU
IPC: B24B37/27
Filed: 1998-09-07
Granted: 2000-06-21
Abstract: This invention provides a holding material of a ground workpiece for restraining deeper scratches generated onto the ground workpiece; and it has excellent wear-resistance, thickness accuracy, warpage resistance, dimensional stability, and the grinding accuracy will not decrease. The holding material 1 of the ground workpiece has a wear-resistant surface layer deposited on the core material layer and at least one of the surface and back of the core material layer. The core material layer is composed of at least one layer of fiber base material (prepreg) impregnated with a thermosetting resin. The surface layer is also composed of fiber base material (prepreg) impregnated with a thermosetting resin, and the fiber base material impregnated with the thermosetting resin constituting the surface material is formed by heating and pressurizing the prepreg 1A of a non-woven fabric aramid fiber base material impregnated with the thermosetting resin.
Patent TW-388166-B (TW)
Title: Method and device for image scanner, and method and mechanism for driving reflective mirror
Inventor: YAMAMOTO HAJIME
IPC: H04N1/04
Filed: 1998-09-14
Granted: 2000-04-21
Abstract: The present invention uses a simple structure for an assembly of an one dimensional sensor at a fixed position and a reflective mirror to scan a to-be-scanned medium placed on a platform in an sub scanning direction where a driving source driving mirror at a constant rotation speed is rotating at a nonlinearly varying angular speed. The rotation of the driving source, through the transmission of a driving mechanism connected with a link mechanism at four joints, enables the reflective mirror to rotate at a nonlinearly varying angular speed so that the scanning position on the medium being scanned is moving at a constant linear speed in the sub scanning direction.
Patent TW-390963-B (TW)
Title: Method and apparatus for detecting heavy metals in silicon wafer bulk withhigh sensitivity
Inventor: SUNAKAWA TAKESHI
IPC: G01N23/223
Filed: 1998-09-22
Granted: 2000-05-21
Abstract: The present invention is to provide a method and apparatus for detecting heavy metals within the bulk of a silicon wafer with high sensitivity. An electric field is applied to a surface of the silicon wafer in order to aggregate heavy metals existing within the bulk of the silicon wafer to the surface of the wafer or the vicinity thereof, and the heavy metals aggregated to the surface of the wafer or the vicinity of the surface are analyzed. The application of an electric field is performed through corona-discharge treatment of the surface of the wafer, or through application of voltage to the surface of the wafer via a contact or non-contact electrode. Alternatively, an x-ray beam is radiated onto the surface of the silicon wafer in order to aggregate heavy metals existing within the bulk of the silicon wafer to the surface of the wafer or the vicinity thereof, and the heavy metals aggregated to the surface of the wafer or the vicinity thereof are analyzed. The method and apparatus for detecting heavy metals are simple and do not require a pre-treatment such as heat treatment which would cause secondary contamination.