baber/WOPTO huggingface dataset:
Patent KR-20000014614-A (KR)
Title: Device and method for controlling drawing rate of skin pass mill in continuous annealing line
Inventor: PARK MAN GYU
IPC: B21B37/16
Filed: 1998-08-21
Abstract: PURPOSE: A drawing rate control device is provided to supply reliability to maintenance of the drawing rate of a strip rolled and drawn in a continuous annealing line by make a drawing rate error caused by slip generated between a work roll and a strip and to improve the quality of a final product by improving the drawing hit rate. CONSTITUTION: The drawing rate control device has the steps of:installing a judging speed detecting unit(110, 120) on an entrance and an exit sides of a SPM(100); feeding the signal of the judging speed detecting unit to a signal changing unit(130); feeding the output signal of the signal changing unit to an input signal judging unit(140); feeding the output signal to calculation unit(150) of a press rolling calibration amount; feeding the output signal of calculation unit of the press rolling calibration amount to a control signal changing unit(160); feeding the output signal of the control signal changing unit to an oil pressure driving unit(170).
Patent KR-20000019582-A (KR)
Title: Device for manufacturing barrier rib of plasma display panel
Inventor: KIM KI GU
IPC: H01J9/24
Filed: 1998-09-14
Abstract: PURPOSE: To prevent bending of barrier rib materials, PDP possesses two assistant rollers beside a main roller for shaping barrier rib. CONSTITUTION: Ti substrate(51) is fixed on a barrier rib materials(55) with glue. A main roller for shaping barrier rib arranged on the Ti substrate. And two assistant rollers(65a,65b) are arranged beside a main roller. If the substrate moves or the main roller moves, the main roller press the substrate and the assistant roller prevent the substrate from bending. So barrier rib(55') is forming with the same height.
Patent KR-20000020772-A (KR)
Title: Method for gauging coma aberration of lens
Inventor: YIM DONG GYU
IPC: G03F7/20
Filed: 1998-09-23
Abstract: PURPOSE: A method for gauging coma aberration of lens is provided to enhance productivity and easily gauge the coma aberration by quantifying the pa RAMeter of the coma aberration influencing on the pattern registration. CONSTITUTION: A method for gauging coma aberration of lens comprises a step of forming a center hole and plural small holes around the center hole, a step of exposing along the plural small holes, a step of gauging the wave front information formed on the pupil site(7) of the lens through the respective hole, and a step of gauging the coma aberration of the lens. The holes are formed on the aperture of the lens. The exposing process is performed under only one hole among the plural holes opened. The relative wave front difference between the center hole and desired hole is gauged.
Patent KR-20000021189-A (KR)
Title: Apparatus for supporting basic design of switching network and method therefor
Inventor: MUN SEONG BONG
IPC: H04Q1/02
Filed: 1998-09-26
Abstract: PURPOSE: An apparatus for supporting the basic design of switching network is provided to estimate anticipates a subscriber traffic demand about a telephone line, calculate a proper trunk line number, and achieve an accurate demand forecast and accurate design. CONSTITUTION: A method for supporting the basic design of switching network comprises the step of measuring a traffic data, making it as a data base, and generating a basic design data by a statistic processing; Based on the traffic data, calculating originating/terminating traffic rate and a traffic between stations of a prior switching network, and estimates a point-to-point traffic; adding a design year network plan data and traffic demand/forecast data, and generates a design application data; designing a switching network on the basis of a design application data, a design basic data, and a point-to-point traffic demand forecast data; Finally, outputting a design result.
Patent KR-19990036713-A (KR)
Title: 배선기판 및 그것을 사용한 가스방전형 표시장치
IPC: H01J17/04
Filed: 1998-09-30
Abstract: 기판상에 배선패턴을 형성하는 배선기판 및 그것을 사용한 가스방전형 표시장치에 관한 것으로서, 전극의 사이드에치나 예기치 않은 침식에 의해 단선불량이 쉽게 발생한다는 문제점을 해결하기 위해서, 웨트에칭에 있어서의 레지스트를 무기재료로 형성하고, 여러개의 제1 전극을 갖는 앞면기판과 여러개의 제2 전극을 갖는 배면기판을 구비하고, 적어도 제1 전극 또는 제2 전극을 무기재료로 이루어지는 레지스트를 사용해서 웨트에칭에 의해 형성하고, 여러개의 제1 전극과 제1 전극을 피복하는 제1 유전체층을 갖는 앞면기판 및 여러개의 제2 전극과 제2 전극을 피복하는 제2 유전체층을 갖는 배면기판을 구비하고, 적어도 제1 전극과 제1 유전체층 사이 또는 제2 전극과 제2 유전체층 사이에 무기재료층을 갖고, 무기재료층을 사용해서 제1 전극 또는 제2 전극을 웨트에칭에 의해 형성하는 구성으로 하였다. 
     이렇게 하는 것에 의해서, 배선기판이나 가스방전형 표시장치에 형성하는 전극의 단선불량을 억제할 수 있고, 전극을 웨트에칭에 의해 형성하는 경우의 단선불량을 억제할 수 있다는 효과가 얻어진다.
Patent KR-19990086990-A (KR)
Title: 플라즈마 디스플레이 장치의 구동 방법
IPC: G09G3/298
Filed: 1998-09-30
Abstract: 본 발명은 X, Y 전극을 홀수번과 짝수번으로 따로따로의 유지 방전 신호를 인가하는 PDP의 구동 방법에 있어서, 정상적인 표시가 안정되게 행하여 질 수 있게 한다. 
     평행하게 배치된 제 1 및 제 2 전극(2,3)과, 제 1 및 제 2 전극에 대해서 직교하는 형태로 배치된 제 3 전극(4)을 갖는 표시 패널을 구비하고, 어드레스 공정에서 주사 펄스와 어드레스 신호에 의해 슬릿의 선택을 행하고, 유지 방전 공정에서 선택한 슬릿으로 유지 방전을 행하게 하는 플라즈마 디스플레이 장치로서, 제 2 전극과 한 쪽측과 다른 쪽측의 제 1 전극 사이에 제 1 및 제 2 슬릿이 형성되고, 제 1 슬릿과 제 2 슬릿에서 인터레이스 표시를 행하는 플라즈마 디스플레이 장치의 구동 방법으로서, 어드레스 공정과 유지 방전 공정 사이에 어드레스 공정에서의 방전으로 축적된 벽전하의 극성과 전하량 중 적어도 한 쪽을 조정하기 위한 전하량 조정 펄스를 인가하는 전하 조정 공정을 설치한다.
Patent KR-20000026849-A (KR)
Title: Guide structure for entering photosensitive belt of print device
Inventor: LEE MIN SOO
IPC: G03G15/00
Filed: 1998-10-23
Abstract: PURPOSE: A guide structure for entering photosensitive belt of print device is provided to easily and conveniently install a photosensitive belt in a body of a print device by entering the photosensitive belt into the print device. CONSTITUTION: A plate spring is installed to an inner portion of a receiving case(100) according to an inner side of a peripheral wall(120). An one side portion of the plate spring is fixed to a stepped difference portion installed to an inner side boundary portion of a front surface wall(110) and the peripheral wall(120) by a screw(300). An other side portion of the plate spring is installed to the inner side of the peripheral wall(120). A photosensitive belt is inserted between the plate spring and the inner side of the peripheral wall(120). A first rail(400) is formed to an external side upper surface of the peripheral wall(120) according to an entering direction of the receiving case(100). A second rail(500) is formed to an inner portion of a print device(600).
Patent KR-19990037365-A (KR)
Title: 지관 라이닝재 및 관라이닝 공법
IPC: F16L55/165
Filed: 1998-10-24
Abstract: 본 발명의 목적은 접합구조가 다른 지관에 대하여 공용할 수 있는 지관 라이닝재를 제공하는 것이다. 
     일단에 경화된 플랜지부(1B)를 보유하고, 외표면이 기밀성이 높은 플라스틱 필름(2)으로 피복된 관상수지흡착재(경화성수지함침부)(1A)에 미경화의 경화성수지를 함침시켜서 이루어지는 지관 라이닝(1)에 있어서, 상기한 플랜지부(1B)에 상기한 관상수지흡착재(1A)에 연속되는 원통부 또는 그 원주에 따른 복수의 볼록부(1a)를 형성하고, 그 원통부 또는 볼록부(1a)의 높이(h)를 0.5m/m∼50m/m로 설정하고, 동일한 원통부 또는 볼록부(1a)의 외경(d 2 )을 지관의 내경(D 2 ) 보다도 0.5m/m∼50m/m 만큼 작게 설정하며, 플랜지부(1B)의 최대 외형칫수(d 3 )를 지관의 외경(D 1 ) 보다도 크게 설정함과 아울러, 그 플랜지부(1B)의 판두께(t 1 )를 1m/m 이상으로 하여 그 구부림 탄성률을 30㎏/㎟ 이상으로 설정한다.
Patent KR-20000033535-A (KR)
Title: Diamond electrodeposition wire for cutting brittle material and producing method thereof
Inventor: PARK PYEONG RYEOL
IPC: E21C29/12
Filed: 1998-11-24
Abstract: PURPOSE: A diamond electrode position wire is provided to prevent a cut face of a cut material from being contaminated, to prevent a cut slurry from getting stuck upon cutting a brittle material and to have an excellent cutting performance. CONSTITUTION: A lapping element wire is degreased, rinsed and acid-washed and secondly coated in a coating tub contained with a diamond particle, so that the electrode position of diamond particles is accomplished. Accordingly, the diamond electrode position wire for cutting a brittle material is completed after a rinsing and a drying process. After the electrode position of diamond particles is completed by the formation of a second coated layer(3), the diamond electrode position wire formed with a chip pocket(5) is obtained between spiral second coated layers by removing the lapping element wire(6). The removal work of the lapping element wire is processed in the reverse order of the work of winding the lapping element wire around the core wire.
Patent KR-20000033617-A (KR)
Title: Method for high quality picture realization through gamma revision for pdp television
Inventor: KIM JEONG SU
IPC: H04N5/66
Filed: 1998-11-25
Abstract: PURPOSE: A method for a high quality picture realization through gamma revis ion for PDP television is provided to execute different gamma revis ions according to the range of auto picture level detected. CONSTITUTION: A method for a high quality picture realization through gamma revis ion for PDP television includes first thru fifth steps. At the first step, an input multi image signal is converted to a digital pixel data. At the second step, the auto picture level is detected from the luminance mixed with the multi image signal. At the third step, the range of the auto picture level detected at the second step is determined. At the forth step, a gamma revis ion is executed on the converted pixel data according to the determined range of the auto picture level.
Patent KR-20000037958-A (KR)
Title: Management system for vechcle
Inventor: CHOI TAE SEOB
IPC: B60Q11/00
Filed: 1998-12-03
Abstract: PURPOSE: Management system for vehicle is provided to count a life of parts of vehicle, to inform a driver of a suitable exchange time, and to extend the life of a vehicle. CONSTITUTION: Management system for vehicle comprises: a key input part (10) to input a consumption article when exchange happens; a storage part of exchange time of consumption article (20) to memorize the kind of consumption article and the total distance covered; a micro computer (40) to be input the distance covered, to count a life of consumption article, and to confirm whether exchange time comes or not; a display part (50) to display the kind of consumption article to have to exchange.
Patent KR-20000040741-A (KR)
Title: Supporter for compressing tool of airtight rotary compressor
Inventor: AHN JI YONG
IPC: F04C2/00
Filed: 1998-12-19
Abstract: PURPOSE: A supporter is provided to prevent coolant from leaking caused by heat deformation generated when a compressing tool is welded into an airtight container. CONSTITUTION: A supporting plate(100) covers an upper bearing and a cylinder with its body(110) by inserting a through hole(111A) of an upper bearing opening unit(111) into the central protrusion of the upper bearing. The upper bearing opening unit and a cylinder opening unit(112) are open in the state of contacting with the upper face and the side face of the upper bearing and the cylinder's edge. Then a bolt combining hole(111B) formed on the outline of the through hole is equalized with a bolt combining hole formed on the upper bearing in order to combine together with a bolt. Finally, the body of the supporting plate is welded into the inside of an airtight container.
Patent KR-20000042516-A (KR)
Title: Method for controlling shape in sendzimir mill
Inventor: LEE DAE GEUN
IPC: B21B37/00
Filed: 1998-12-26
Abstract: PURPOSE: A control method of shape in a Sendzimir mill is provided to prevent occurrence of meandering and to elevate stability in working. CONSTITUTION: A present shape of a steel plate to be rolled is detected by using a shape detector in the direction of steel plate discharge among a first shape detector and a second shape detector. The shape value measured from the first and the second shape detectors is received in a control unit and classified to a representative shape pattern. Based on the representative pattern classified result, the positions of top-crown-rollers of a Sendzimir mill are calculated.
Patent KR-20000043923-A (KR)
Title: Method for forming insulating layer of semiconductor device
Inventor: CHO JIK HO
IPC: H01L21/31
Filed: 1998-12-29
Abstract: PURPOSE: A method for forming an insulating layer of a semiconductor device is provided to increase a mean-free-path of a deposited reaction material by using a high density plasma chemical vapor deposition method. CONSTITUTION: A method for forming an insulating layer of a semiconductor device comprises the following steps. A semiconductor substrate(11) formed with a wiring(13) is loaded into a reaction chamber of a high density plasma chemical vapor deposition equipment. A reaction gas containing an inactive gas is flowed. A power of a high frequency is applied to the semiconductor substrate in order to perform a deposition process. The amount of the flow of the inactive gas is about 20 to 300 sccm.
Patent KR-20000044064-A (KR)
Title: Method for storing audio level in broadcasting receiving system
Inventor: KIM IN CHEOL
IPC: H04N5/46
Filed: 1998-12-30
Abstract: PURPOSE: A method for storing an audio level in broadcasting receiving system is provided to store a size of an audio signal corresponding to a broadcasting signal channel. CONSTITUTION: A method for storing an audio level in broadcasting receiving system comprises the steps of: turning on power of a broadcasting signal receiving system; displaying menus of all programs of the broadcasting signal receiving system; determining whether an automatic selection mode is selected among the program menus; determining whether there is a synchronous signal among received broadcasting signals if the automatic selection mode is selected among the program menus; storing the number of a channel of the received broadcasting channel if there is a synchronous signal among the received broadcasting signals; detecting an audio signal of the received broadcasting signal; storing the detected audio signal; determining whether the automatic selection mode is finished if the above processes are finished; tuning the next number if there is not the synchronous signal; and executing and finishing the selected mode if the automatic channel selection mode is not selected.
Patent KR-19990043979-A (KR)
Title: 광호변성 제품용 중합체성 물질
IPC: C08K5/34
Filed: 1996-08-16
Abstract: 본 발명은 광호변성 첨가제의 케리어로서 유효한 주쇄에 에테르 그룹 또는 측쇄에 알콕시화 그룹을 포함하는 중합체성 물질에 관한 것이다.  중합체성 물질은 바람직하게는 유리전이온도가 125。F 이상이며, 가교결합 밀도가 2 내지 8mol/1l, 보다 바람직하게는 2.5 내지 6mol/1l이다.  광호변성 첨가제가 중합체성 물질에 혼입되는 경우, 스위칭 속도는 고수준에서 유지되는 반면, 광호변성 반응 수준은 온도 변화에 비교적 민감하지 않다.  중합체성 물질이 혼입될 수 있는 광학 제품의 예에는 안과용 렌즈, 안경, 안전 유리, 창 및 자동차 유리를 포함한다.
Patent KR-19990044449-A (KR)
Title: 도안이 부착된 실리콘 고무 성형품의 제조방법
IPC: B29C33/12
Filed: 1997-07-07
Abstract: 본 발명은 도안이 강하게 결합된 실리콘 고무 성형품의 제조방법을 제공한다. 
     상기 방법에 있어서 사용하는 전사재 또는 커버 필름은, 성형시, 미경화 실리콘 고무 조성물에 접촉하는 전사재 또는 커버 필름의 층이, 규소 원자에 결합된 적어도 2개의 수소원자를 갖는 폴리오르가노하이드로겐실록산, 또는 비닐트리에톡시실란 등과 같은 불포화 결합을 갖는 알콕시실란을 결합 촉진 성분으로서 함유한다.
Patent KR-19990064221-A (KR)
Title: 브러시를 통한 화학약품 공급 방법 및 장치
IPC: B08B1/04
Filed: 1996-10-11
Abstract: 반도체기판 세척방법에 사용된 브러시(240)를 통한 화학약품 공급방법 및 장치.  화학약품용액(210, 220)은 브러시(240)의 중심부(230)에 공급되고 여기서 용액이 브러시(240)에 의해 흡수된 다음 브러시(240)에 의해 기판에 가해진다.  이 공급시스템은 화학약품용액(210, 220)을 반도체기판에 균일하게 가하고, 세정공정에서 사용된 화학약품용액(210, 220)의 부피를 감소시키며, 기판의 pH 프로파일의 조절을 유지하도록 돕는다.  이 시스템은 반도체기판의 양면을 문지르는 세정기와 관련하여 사용되는 방식으로 기술되고 예시된다.
Patent KR-20000064285-A (KR)
IPC: F23D1/00
Filed: 1997-04-30
Abstract: A combustion burner includes a mixture nozzle, a gas supply nozzle, and guide means. The mixture nozzle extends toward an interior of a furnace, and defines a mixture passage through which a mixture containing powdered solid fuel and gas for transferring the solid fuel flows. A distal end portion of the mixture nozzle is flared so that a flow passage area of the mixture passage increases progressively in a direction of flow of the mixture. The gas supply nozzle radially surrounds the mixture nozzle to define between the gas supply nozzle and the mixture nozzle a gas passage through which a combustion oxygen-containing gas flows toward the furnace. The guide means is provided within the mixture nozzle at a position upstream of the flared portion of the mixture nozzle with respect to a flow of the mixture so as to make the mixture flow straightly along an inner peripheral surface of the flared portion of the mixture nozzle. <IMAGE>
Patent KR-19990076852-A (KR)
Title: 연도 가스 세척 장치 및 방법
IPC: B01D53/40
Filed: 1996-08-20
Abstract: 공익사업 및 산업 설비에서 실행되는 유형의 처리 작용에 의해 생성되는 연도 가스로부터의 산성 가스 및 미립자 물질을 제거하기 위한 스프레이 타워에 관한 것이다.  슬러리는 탱크로부터 타워 내부에 위치한 스프레이 장치(118)로 펌핑(pumping)된다.  스프레이 타워는, 2개의 분리된 통기 및 교반 장치를 위한 요구 없이, 슬러리를 탱크의 제한된 구역내에 산화시키고 부드럽게 교반하도록 하는 내측 구조(134)를 더 포함한다.  결론적으로, 스프레이 타워의 구성, 작동 및 유지 비용은, 종래 기술의 스프레이 타워와 비교하여 상당히 감소된다.
Patent KR-20000005226-A (KR)
Title: Hexahydro-pyrido(4,3-b)indole derivatives as antipsychotic drugs
Inventor: KENNIS LUDO EDMOND JOSEPHINE
IPC: A61K31/00
Filed: 1997-05-15
Abstract: PURPOSE: A hexahydro-pyriod indole derivative is provided to have a healing effect for a psychotic disease. CONSTITUTION: This invention concerns the compounds of formula (I), the pharmaceutically acceptable addition salts and the stereochemically isomeric forms thereof, wherein Alk is C1-6alkanediyl; R1 is hydrogen, C1-6alkyl, aryl or arylC1-6alkyl; R2, R3 and R4 are each independently selected from hydrogen, halo, hydroxy, nitro, cyano, C1-6alkyl, C1-6alkyloxy, trifluoromethyl, C1-6alkylthio, mecapto, amino, mono- and di(C1-6alkyl)amino, carboxyl, C1-6alkyloxycarbonyl or C1-6alkylcarbonyl; R5 is hydrogen, C1-6alkyl, phenyl or phenylC1-6alkyl; R6 is hydrogen, C1-6alkyl, C1-6alkyloxy, C1-6alkylthio, or a radical of formula -NR8R9, wherein R8 and R9 are each independently selected from hydrogen, C1-6alkyl, phenyl or phenylC1-6alkyl; R7 is hydrogen or C1-6alkyl; or R6 and R7 taken together may form a bivalent radical of formula -R6-R7- having central dopamine and serotonin antagonistic activity; their preparation, compositions containing them and their use as a medicine.
Patent KR-20000005333-A (KR)
Title: COPRODUCING METHOD OF 6-AMINOCAPRONITRIL AND HEXAMETHYLENE thiamine
Inventor: SHUNUR BERNER
IPC: C07C253/30
Filed: 1997-04-04
Abstract: PURPOSE: In conventional methods, it is unknown whether Ni-containing catalyst used in hydrogenation of dinitril with high boiling point, especially adiponitril, can be regenerated. Disensory compounds such as dinitril may cause regeneration problem by forming oligomer under certain condition. The present invention relates to a method of regenerating catalyst in simple method, with hydrogenating ADN(adiponitril) with ACN(aminocapronitril) and HMD(hexamethylene thiamine). CONSTITUTION: A coproducing method of 6-aminocapronitril and hexamethylene thiamine, comprises the steps of, after conversion rate on the basis of adiponitril(ADN) and/or selectivity on the basis of 6-aminocapronitril is lowered under defined value, 1) interrupting the hydrogenation of ADN by stopping the supply of ADN and solvent, 2) treating catalyst with hydrogen of 0.1 to 30MPa hydrogen pressure at 150 to 400°C for 2 to 48hours, and then 3) continuing hydrogenation of ADN using treated catalyst of 2) step ADN. And 6-aminocapronitril and hexamethylene thiamine are coproduced by treating ADN with hydrogen in the presence of Ni-containing catalyst.
Patent KR-20000010888-A (KR)
Title: Message transmission system, a method of operating the message transmission system, and a primary station therefor
Inventor: SHARPE ANTHONY KEITH
IPC: H04M3/42
Filed: 1998-02-16
Abstract: PURPOSE: A message transmission system is provided to maximize the application of an efficiency of a communication system. CONSTITUTION: A message transmission system, such as a paging system, in which message compression is practiced through the use of identical memories(46,80) in a primary station(10) and a secondary station (20) storing identically the most frequently used n (where n is an integer) items of numeric only or alpha-numeric data. The contents of the memories(46,80) are updateable dynamically to reflect changes in the most frequently used items by the primary station examining messages to be sent to a particular address to see if an item is being used more frequently than one of those stored in which case the primary station at its own volition re-writes the data in the memories(46,80). The secondary station automatically acknowledges that its memory has been updated. The inventive technique may also be applied to frequently used phrases and also to complex graphical data which it is more efficient to store in the primary and secondary stations and to transmit a memory location indicator
Patent KR-19990067849-A (KR)
IPC: H01L21/822
Filed: 1999-01-12
Abstract: 집적 회로 출력 버퍼는 IC가 동작하도록 설계되는 전원 전압 레벨보다 더 큰 전압 레벨에 대한 허용치를 향상시킨 것이다.  통상적으로 p 채널의 제 1 전송 게이트 트랜지스터(110)는 소정 노드(114)에서 출력 컨덕터(101) 및 저항기(108) 사이에 접속된다.  노드는 또한 통상적으로 p 채널의 제 2 전송 게이트 트랜지스터(105)의 게이트에 접속된다.  저항기는 전원 전압 레벨쪽으로 소정의 노드(예컨대, 접지)를 풀링하am로, 제 2 전송 게이트 트랜지스터는 정상 동작중에 도전성을 갖는다.  노드가 접지에 이르게 되는 것을 방지하기 위해, 적어도 하나의 다이오드와 같은 전압 강하 디바이스(201, 202)가 저항기와 직렬로 접속된다.
Patent KR-20000050649-A (KR)
Inventor: LEE SANG DON
IPC: H01L21/336
Filed: 1999-01-13
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to control reduction of an effective channel length caused by diffusion of a low density region, and to simplify a manufacturing process, by omitting an ion injection for forming the low density region. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a buffer oxidation layer on a first conductive semiconductor substrate having an isolation region or a surface of a well, forming a photoresist layer pattern on the buffer oxidation layer, and forming a channel ion-injection region by injecting impurity ions of a first conductivity type; growing a gate oxidation layer after eliminating the photoresist layer pattern and buffer oxidation layer, forming a gate by forming a gate electrode on the entire surface and patterning; forming a hollow ion-injection region by hollow-injecting impurity ions of a first conductivity type, using the gate as a mask; forming an insulation layer on the entire surface of the structure, and forming a gate sidewall by a selective etching; forming a source/drain region, by obliquely injecting impurity ions of a second conductivity type, using the gate and gate sidewall as a mask; and activating the injected impurity ions by performing a heat treatment regarding the structure including the source/drain.
Patent KR-20000050853-A (KR)
Inventor: KIM JONG HWAN
IPC: H01L29/06
Filed: 1999-01-15
Abstract: PURPOSE: A power double diffused metal oxide semiconductor(DMOS) is provided to reduce body resistance under a source region by changing the structure of the source region so that the turn-on phenomenon of a parasitic bipolar transistor is controlled. CONSTITUTION: A power double diffused metal oxide semiconductor(DMOS) comprises a drift region of a first conductivity on a semiconductor substrate, a body region of a second conductivity, a source region of the first conductivity, a high density regions of the second conductivity, a drain region of a first conductivity, a gate electrode, a source electrode and a drain electrode. The body region of the second conductivity opposite to the first conductivity is formed on a predetermined region of the drift region. The source region of the first conductivity includes a second source region connecting a first source region of a loop shape with portions facing opposite to the first source region, formed on the body region. The first source region adjoins a channel region of the body region. The high density regions of the second conductivity are formed between the first source region and the second source region, in the body region. The drain region of the first conductivity is formed in a predetermined region of the drift region. The gate electrode is formed on an edge portion of the first source region and the body region by intervening an insulation layer. The source electrode is formed through a source contact exposing the second source region and the high density region of the second conductivity. The drain electrode is formed through a drain contact exposing the drain region.