baber/WOPTO huggingface dataset:
Patent TW-341579-B (TW)
Title: Process for enhancing the melt strength of polypropylene (co)polymers
Inventor: ANDREAS HERMAN HOGT
IPC: C08F8/50
Filed: 1996-11-13
Granted: 1998-10-01
Abstract: A process for enhancing the melt strength of a polypropylene(co)polymer with the aid of initiator dispersions, a majority of the initiator being decomposed prior to the melting of the polymer and the groups formed therefrom reacting with the polymer, which is characterized in that the polypropylene(co)polymer contacts with the initiator dispersions in a polar medium, at least 90 wt% of the particles of the initiator is less than 50 micron and at least 99 wt% of the particles of the initiator is less than 65 micron.
Patent TW-304279-B (TW)
Title: Method of forming self-aligned salicide
Inventor: YU JENN-HWA
IPC: H01L21/28
Filed: 1996-11-13
Granted: 1997-05-01
Abstract: A method of manufacturing MOSFET device on semiconductor substrate by one double spacers comprises of the following steps: (1) forming multiple field oxide regions in the semiconductor substrate;(2) growing one gate insulator on the semiconductor substrate, but without covering the field oxide region; (3) growing one polysilicon on the gate insulator and the field oxide region; (4) photolithographying one polysilicon gate structure pattern on the polysilicon on the gate insulator, used to generate the polysilicon gate structure; (5) implanting ion with first conductive impurity in the semiconductor substrate where is not covered by the field oxide, used to generate one first source and one first drain region; (6) depositing one first insulator on the polysilicon gate structure, the first source and the first drain region, and the field oxide; (7) by anisotropic etch generating one first insulating spacer on the first insulator on the polysilicon structure side; (8) implanting ion with second conductive impurity in the semiconductor substrate where is not covered by the polysilicon gate structure, the first insulator, and the field oxide, used to generate one second source and one second drain region; (9) depositing one second insulator on the polysilicon gate structure, the first insulating spacer, the second source and the second drain region, and the field oxide; (10) by anisotropic etch generating one double insulating spacers including one second insulating spacer on the second insulator of the first insulator on the polysilicon structure side; (11) implanting ion with third conductive impurity in the semiconductor substrate where is not covered by the polysilicon gate structure, the double insulating spacer, and the field oxide, used to generate one third source and one third drain region; (12) executing one first annealing procedure, used to activate conductive impurity of the first source and the first drain region, the second source and the second drain region, the third source and the third drain region; (13) executing one pre-metal cleaning procedure; (14) on the polysilicon gate structure, the exposed surface on the third source and the third drain top, and the second insulating spacer and the field oxide surface, depositing one first metal layer; and (15) removing the first metal layer without chemical reaction on the second insulating spacer and the field oxide surface, executing one second annealing procedure, used to form one polysilicon gate structure on the polysilicon gate structure, the exposed surface of the third source and the third drain top.
Patent TW-318201-B (TW)
Title: The lateral moving and fixing device for vehicle plank
Inventor: CHEN JIA-RONG
IPC: E04H6/12
Filed: 1996-12-31
Granted: 1997-10-21
Abstract: A lateral moving and fixing device for vehicle plank includes: - Clamp-fixing stand, is having lateral and vertical sliding-slot; - Sliding block, can move in lateral sliding-slot; - Clamp set, is installed on clamp-fixing stand for clamping and moving vehicle plank in lateral; It includes: Install 1st and 2nd connecting rod that intersect point is overlapped with vertical sliding-slot, and one end of both connecting rod is jointed on clamp-fixing stand, the other ends are formed in clamping-shaped. And install 1st and 2nd sliding-slot near the intersect point of connecting rods, and install a sliding pin through 1st and 2nd sliding-slot to slide in vertical sliding slot of clamp-fixing stand; - Adjoined-connecting rod, is adjoined in sliding pin and sliding block, and is by moving sliding-block in lateral sliding-slot to drive sliding pivot moving in sliding-slot also drive the 1st and 2nd connecting rod doing opened-closed motion.
Patent TW-387058-B (TW)
Title: Am apparatuas for analyzing a sample semiconductor solution and a method for controlling the apparatus
Inventor: JU JIN-HO
IPC: G01N27/06
Filed: 1997-03-21
Granted: 2000-04-11
Abstract: Disclosed is an apparatus for analyzing a sample solution for detecting a very small of amount of ion impurities in a sample solution and a method of controlling the apparatus. The apparantus comprises a channel selecting valve 13 which is connected between a sample vessel 10 and positive or negative ion detector and provided to selectively supply a sample solution from the vessel 10 to the positive or the negative ion detector in response to a control signal CS1 from a controller 1. A loading solution used during the sample loading step, the filled sample solutions are pushed up out of the sample loop line to the conductivity detector 40 by loading solutions pumped by a pump. After the sample loading step, when a new sample solution  is again filled from the vessel 10 into the sample loop line 18, a previously loaded loading solution therien is dispensed from the sample loop line 18 indirectly to each outlet line of the positive and negative ion detectors.
Patent TW-340988-B (TW)
Title: Power consumption controlling circuit
Inventor: HAYASHI MASAYUKI
IPC: A45D20/30
Filed: 1997-03-28
Granted: 1998-09-21
Abstract: A sort of power consumption controlling circuit, having: load connected by a coupler to commercial power supply, and power switching means by means of having said coupler ON and OFF for controlling said load power consumption; and a resistor in connection with said coupler in serial for reduction of higher harmony current.
Patent TW-360937-B (TW)
Title: Substrate support with pressure zones having reduced contact area and temperature feedback
Inventor: LUE BRIAN
IPC: H01L21/302
Filed: 1997-04-09
Granted: 1999-06-11
Abstract: An improved substrate support and method for operating in which multiple pressure zones are provided on the surface of the substrate support. A seal area is provided between the different zones to allow different gas pressures in the two zones. A higher gas pressure is provided to a zone corresponding to an area of the substrate where greater heat transfer is desired. The gap between the substrate support and the gas pressure are selected to provide the desired amount of heat transfer. Another aspect is limited substrate contact using protrusions, to maximize heat transfer gas flow. A closed loop control system varies the heat transfer gas pressure in accordance with a temperature sensor. For an electrostatic chuck, the dielectric thickness is varied to give a higher electrostatic force at the periphery of the substrate.
Patent TW-335587-B (TW)
Title: Image display system
Inventor: MASUDA KOUZOU
IPC: H04N5/12
Filed: 1995-11-14
Granted: 1998-07-01
Abstract: A sort of image display system, including: configuration unit for configuration of n (an integer equal or over 1) images on at least 1 frame; display for displaying the image configured by the configuration unit; designator for designation between the image signals configured by the configuration unit the time of reaching the configuration site of n image signals; and controller on the designated configuration site time, for controlling at least one oscillation level and DC level in the area of at least one configured image of n images.
Patent TW-445729-B (TW)
Title: Identification signal registering method and identification signal registering apparatus
Inventor: TAKAMATSU HIROYUKI
IPC: H04K1/02
Filed: 1997-04-29
Granted: 2001-07-11
Abstract: An identification signal registering method of registering an identification signal used for a detecting apparatus to identify an apparatus to be detected, includes a step of transmitting a communication request signal from a remote control apparatus having an inherent identification signal to the detecting apparatus, a step of receiving the communication request signal by the detecting apparatus and transmitting a random number signal therefrom to the remote control apparatus, a step of receiving the random number signal by the remote control apparatus and encrypting the inherent identification signal by using the random number signal to transmit it therefrom to the detecting apparatus, a step of receiving and decrypting the encrypted inherent identification signal by the detecting apparatus, a step of, if the decrypted inherent identification signal coincides with an identification signal previously stored in the detecting apparatus, setting the detecting apparatus in its mode for registering an identification signal of the apparatus to be detected, and a step of, in the registration mode, transmitting the identification signal from the apparatus to be detected to the detecting apparatus to register this identification signal in the detecting apparatus.
Patent TW-348286-B (TW)
Title: Optimization of energy of sub-amorphizing threshold dose implant used prior to dopant implant to achieve shallower junction
Inventor: AKIF SULTAN
IPC: H01L21/265
Filed: 1997-04-29
Granted: 1998-12-21
Abstract: A method for forming a doped region in a substrate, which comprises the following steps: implanting a non-electrically active material of a sub-amorphization degree into the substrate thereby achieving a first projection range; and implanting a dopant into the substrate and performing an annealing treatment on the substrate thereby obtaining a specified junction depth, xj.
Patent TW-332907-B (TW)
Title: Double diffuse implant junction
Inventor: JAMES HSU
IPC: H01L21/335
Filed: 1997-05-13
Granted: 1998-06-01
Abstract: A system and method for providing a very short channel memory cell having a couble diffuse implant junction is disclosed . The system and method comprise the sequential steps of providing a junction implant , providing a spacer , and providing a double diffuse implant . Because the double diffuse implant is provided after the spacer , the double diffuse implant does not extend as far under the gate of a memory cell after processing . Thus , the memory cell has a graded junction that does not substantially shorten the effective length of the channel . The memory cell can , therefore , function even as the size of the memory cell is decreased . In addition , the thermal cycling of the double diffuse implant may be decoupled from that of the junction implant. This is achieved without complicating processing . Consequently , overall system performance is enhanced.
Patent TW-406165-B (TW)
Title: Propeller type fluid machinery
Inventor: HIRAYAMA TAKUYA
IPC: F04C18/107
Filed: 1997-05-30
Granted: 2000-09-21
Abstract: The subject of this invention is to provide a propeller type fluid machinery, by which if an operating chamber becomes abnormal high pressure due to any reason, the pressure is surely let escape, the stress applied to a blade can be eliminated to improve the reliability of the blade, and the overcompression state can be surely prevented to contribute to the improvement in performance. To achieve the object of this invention, the solution is: comprising a helical blade operating mechanism 3 including a cylinder 5, a roller 11 eccentrically disposed in the cylinder and partially contacting the inner surface of the cylinder, a spiral groove 14 provided along the peripheral surface of the roller with gradually reduced intervals from the suction side to the discharge side, and a helical blade 15 which is fitted in the helical groove in such a manner as to freely go in and out the helical groove to partition the space between the helical groove and the cylinder into plural operating chambers 16 with reducing volume from the suction side to the discharge side, wherein the discharge side wall surface of the helical groove is provided with a release passage 20 for letting the pressure escape to the discharge side operating chamber whose volume is far smaller when the pressure in the operating chamber exceeds a designated value.
Patent TW-346627-B (TW)
Title: Method for forming bump on bump disk
Inventor: CHERN TSWEN-REN
IPC: G11B7/26
Filed: 1997-06-04
Granted: 1998-12-01
Abstract: A method for forming a bump on a bump disk/calibration disk, which at least comprises the following steps: (a) preparing a substrate of a bump disk; and (b) wet etching the surface of the substrate thereby forming a bump with a predetermined height.
Patent TW-575598-B (TW)
Title: Improved process for preparing high molecular weight polyesters
Inventor: BRUGEL EDWARD G
IPC: C08G63/78
Filed: 1997-06-12
Granted: 2004-02-11
Abstract: An improved process for preparing high molecular weight polyester polymers, such as poly(butylene terephthalate), an alkylene glycol and a di- or tricarboxylic acid by first preparing a pre-polymer in the form of uniform solid particles having an intrinsic viscosity of from 0.1 to about 0.3 dL/gm and a chemical composition which contains greater than a 1% stoichiometric excess of the alkylene glycol above the amount required to produce a high molecular weight polymer, and polymerizing the pre-polymer in the solid state.
Patent TW-473524-B (TW)
Title: Ink and coating compositions containing silicon-treated carbon black
Inventor: MAHMUD KHALED
IPC: C09D7/12
Filed: 1997-06-13
Granted: 2002-01-21
Abstract: Ink and coating compositions are disclosed comprising a silicon-treated carbon black. The silicon-treated carbon black may have at least one attached organic group, and the ink and coating compositions may comprise a combination of silicon-treated carbon black products, with and/or without at least one attached organic group, and untreated carbon black. Methods are disclosed for improving the jetness, improving the blue tone, improving the platewear, reducing the premix residue, modifying theological properties, or improving waterfastness, of ink and coating compositions by incorporating therein silicon-treated carbon black.
Patent TW-335511-B (TW)
Title: Stress control by fluorination of silica film
Inventor: ROMUALD NOWAK
IPC: H01L21/31
Filed: 1997-07-16
Granted: 1998-07-01
Abstract: A method for controlling the intrinsic stress level of a deposited silicon oxide film, including the following steps: (a) introduction of a manufacturing gas containing silicon, oxygen and halogen into the chamber, and (b) forming plasma from the manufacturing gas for deposition of the layer; with introduction of the halogen source at a selected speed, being the selected speed determined by the predetermined stress.
Patent TW-358276-B (TW)
Title: Combined digital audio/video on demand and broadcast distribution system
Inventor: WAKAI BRUCE MINORU
IPC: H04L12/64
Filed: 1997-08-26
Granted: 1999-05-11
Abstract: An audio signal distribution system, for distribution of audio signals to one or more passengers on the unit, including: (a) one or more media servers, for saving programmed data; (b) one or more controllers, for passengers to receive text data; (c) a routing data, connected to one of more media servers and a first controller of programmed numbers, for forming of a first audio signal route, for emission of the audio text from the media server to the first controller of programmed numbers; and (d) a system interface unit, connected to the controller as an existing on-board interface including a PA system, for forming a second audio signal path for mission of the content of the audio signal from the system interface unit to the controller.
Patent TW-356550-B (TW)
Title: A polypropylene film and a capacitor using it as a dielectric
Inventor: UEDA TAKASHI
IPC: B29L7/00
Filed: 1997-09-20
Granted: 1999-04-21
Abstract: A kind of polypropylene film, its characteristics is: biaxially oriented polypropylene film, and the isotacticity orientation of the said film is 98~99.5%, isotacticity orientation pentad fraction is above 99%, ash content is below 30ppm, and the central line average surface roughness on the two sides is 0.01~0.4 micro-meter.
Patent TW-377486-B (TW)
Title: Method of manufacturing shallow trench isolation structure
Inventor: LU WEN-BIN
IPC: H01L21/76
Filed: 1997-09-26
Granted: 1999-12-21
Abstract: Manufacturing of shallow trench isolation structure is mainly by creating a flowing dielectric interlayer over the insulating layer to enhance the planarization effect of the polishing surface and to reduce the chance of generating dishing on oxide surface due to over-etching. The process under this invention includes wherein: (1) creating a substrate; (2) forming a mask layer over the substrate to define the mask layer; (3) forming an opening on the substrate; (4) forming an insulating layer between the opening and the surface of mask layer; (5) forming a flowing dielectric interlayer over the insulating layer; (6) etching away the flowing dielectric interlayer and a portion of the insulating layer to expose mask layer surface; and (7) removing the mask layer. A shallow trench isolation structure is thus completed.
Patent TW-402840-B (TW)
Title: Frequency generator
Inventor: PANG DAI-SUNG
IPC: H03L7/089
Filed: 1997-11-05
Granted: 2000-08-21
Abstract: A frequency generator is disclosed, comprising a first frequency oscillator producing an output signal of a predetermined frequency; a first frequency divider frequency-dividing the first frequency oscillator's output signal; a second frequency divider frequency-dividing an input signal by a predetermined factor; a flip-flop receiving a signal generated from the second frequency divider, and producing a signal in accordance with an input clock signal; a pulse-width detector detecting a width of an output signal of the flip-flop; a comparing part comparing an output signal of the pulse-width detector with a reference value; a counter counting a digital value, corresponding to a desired frequency, in response to an output signal of the comparing part; a digital-analog converter converting a digital value, produced from the counter, into an analog value; and a voltage controlled oscillator producing a clock signal in response to an output signal of the digital-analog converter, and feeding the clock back to the second frequency divider.
Patent TW-346558-B (TW)
Title: Monophase electromechanical transducer, in particular of the horological type, and electromechanical device including at least one such transducer
Inventor: TAGHEZOUT DAHO
IPC: G04C13/12
Filed: 1997-11-24
Granted: 1998-12-01
Abstract: A monophase electromechanical transducer of the horological type, which comprises: a stator made of a magnetic material; a rotor including a permanent magnet; a coil; the stator comprising a planar structure and a core, the coil being mounted surrounding the core, the planar structure defining two magnetic stator poles, its two separate pole extension members defining a hole, the rotor being passing through the hole, the permanent magnet of the rotor being magnetically coupled to the two pole extension members, the core enabling its first and second ends to separately connect to the two magnetic stator poles, in which, the coil is located in an opening provided in the planar structure, the edge of the opening is closed per se so that a portion of the planar structure defining the second magnetic pole surrounds a portion of the planar structure defining the first magnetic stator pole, and the coil protrudes from the substantial plane of the planar structure.
Patent TW-358850-B (TW)
Title: Combustor turbine and method for reducing emission of nitrogen oxides in a combustor
Inventor: PARKER DAVID MARCHANT
IPC: F23R3/34
Filed: 1997-12-04
Granted: 1999-05-21
Abstract: A combustor turbine, including: an injector casing, having a seat, a combustion region disposed next to the injector casing, and on the opposing side of the seat; a primary fuel manifold, disposed on the seat of the injector casing; a nozzle, disposed on the injector casing seat, with the nozzle disposed inside the injector casing, having the nozzle a fuel expansion system; a primary injector disposed inside the injector casing, in parallel to the longitudinal axis of the nozzle; a system, leading the pre-mixed air-fuel to the guiding region, including a guiding combustion stream; a guiding pe-mixed injector, having the pre-mixed injector connected to the primary fuel manifold, and the guiding pre-mixed injector disposed in the route of the guiding injector combustion stream; and a device, for reduction of the feed to the guiding injector fuel, and in proportional increase to the pre-mixed fuel.
Patent TW-392336-B (TW)
Title: Method for manufacturing capacitor with ultra high capacitance and ultra small size
Inventor: TZENG HUNG-HUEI
IPC: H01L27/108
Filed: 1998-03-03
Granted: 2000-06-01
Abstract: This invention discloses the manufacturing method of stacked dynamic random access memory capacitor. After the formation of transistor, the first dielectric layer is deposited and a cell contact is formed from the use of photolithography and etching techniques to etch the dielectric layer in the capacitor region. The first layer of polysilicon and the second dielectric layer are deposited followed by the formation of the first photoresist pattern in the cell contact area by use of photolithography technique such that the first photoresist pattern has the first opening. The organic polymer sidewall spacer is formed in the first opening from the change of dosage in the reaction chamber such that the first opening becomes the second opening. A narrow trench is formed by etching the second dielectric layer through the second opening from the use of etching technique. The first photoresist pattern and the organic polymer sidewall spacer are then removed. The second layer of polysilicon is formed and fills up the narrow trench. The second polysilicon on the second dielectric surface is removed followed by the formation of the second polysilicon pillar in the narrow trench. The second dielectric is removed to expose the second polysilicon pillar and a layer of the third dielectric is formed. The third dielectric sidewall spacer is formed on the sides of the second polysilicon pillar followed by the formation of the third polysilicon. The third polysilicon sidewall spacer and the first polysilicon stud are formed by use of the etching technique to etch back the third polysilicon and the first polysilicon. The third dielectric sidewall spacer is removed such that the third polysilicon sidewall spacer, the second polysilicon pillar and the first polysilicon stud form the charge storage electrode of the capacitor.
Patent TW-418465-B (TW)
Title: Method of etching metallic film of semiconductor devices
Inventor: KIM SUNG-KYEONG
IPC: H01L21/302
Filed: 1998-03-30
Granted: 2001-01-11
Abstract: There is provided a method of etching metallic film of semiconductor devices having its fine structure, wherein said metallic film is etched by an etching process using plasma formed by means of helical resonator of inductive coupled type. Or, a method of etching metallic film formed on semiconductor substrate comprises by the steps of: (a) forming an etching mask on said metallic film; (b) removing a part of said etching mask according to a certain pattern; and (c) etching said metallic film, which is exposed by the removal of a part of said etching mask, by using plasma formed by helical resonator of inductive coupled type.