baber/WOPTO huggingface dataset:
Patent TW-370451-B (TW)
Title: Bicyclic amine derivatives
Inventor: BRIGHTWELL CHRISTOPHER IAN
IPC: C07D451/06
Filed: 1997-11-06
Granted: 1999-09-21
Abstract: A compound of formula (I) wherein A represents a bidentate group of formula -CH2-X-CH2- (wherein X is methylene or oxygen), CH=CH or X'WC-CH2 (wherein X' and W are independently hydrogen, hydroxy, C1-6 alkylsilyloxy or halogen, or X' and W together with the carbon to which they are attached from a carbonyl group), provided that A is not CH2-CH2; Ar is pyridyl, pyrazinyl or phenyl (each optionally substituted by halogen, cyano, C2-6 alkynyl or C1-4 alkoxy); R is hydrogen or a group selected from C1-10 alkyl (optionally substituted by halogen or cyano), C2-6 alkenyl, C2-6 alkynyl, C1-6 alkoxycarbonyl, C2-6 alkenyloxycarbonyl, phenyl(C1-4)alkyl (where the phenyl is optionally substituted by halogen) or phenyl(C1-4)alkoxy, provided that when R is alkenyl or alkynyl said group does not have an unsaturated carbon atom bonding directly to the ring nitrogen of formula (I); R1 is cyano; or an acid addition salt, quaternary ammonium salt or N-oxide derived therefrom. An insecticidal, acaricidal or nematicidal composition comprising a compound of formula (I) and a suitable carrier or diluent thereof; a method of combating and controlling insects, acarine or nematode pests at a locus which comprises treating the pests or the locus of the pests with an effective amount of a compound of formula (I) or a composition as hereinbefore described.
Patent TW-360916-B (TW)
Title: Semiconductor device and fabrication process thereof
Inventor: USAMI TATSUYA
IPC: H01L21/3065
Filed: 1997-12-11
Granted: 1999-06-11
Abstract: Described in the present invention is a semiconductor device in which a plurality of interconnect lines are disposed, through an insulating layer, on the same layer above a semiconductor substrate having a semiconductor element; a first interlevel insulator is formed selectively in a narrowly-space region between adjacent interconnect lines; a second interlevel insulator is formed in a widely-spaced region between said adjacent interconnect lines, and the first interlevel insulator has a smaller dielectric constant than the second interlevel insulator. According to such a constitution, strength and reliability can be heightened and performance can be improved easily even in a miniaturized interconnect structure.
Patent TW-414904-B (TW)
Title: Insulated cap for loadbreak bushing
Inventor: LUZZI GLENN J
IPC: H01H33/06
Filed: 1998-01-15
Granted: 2000-12-11
Abstract: An insulating cap for a loadbreak bushing includes an outer conductive jacket preferably having a ground wire receiving member thereon. The ground wire receiving member may be in the form of an integral tab having a bore therethrough for connection of the ground wire. The insulating cap further includes an insulation member positioned in adjacent relationship to the inner surface of the conductive jacket. In a preferred embodiment, both the inner surface of the conductive jacket and the inner exterior surface of the insulation member includes a smooth, dome-shaped region which helps to control electrical stresses, if any. The inner surface of the insulation member defines a bushing receiving space which substantially corresponds to the exterior shape of a loadbreak bushing. When properly grounded, the outer conductive jacket of the insulating cap is maintained at ground potential.
Patent TW-473707-B (TW)
Title: Apparatus and method for automatically adjusting serving loop system gain of CD-ROM driver
Inventor: GAU JR-SHIAN
IPC: G11B7/09
Filed: 1998-01-21
Granted: 2002-01-21
Abstract: The present invention relates to the apparatus and method for automatically adjusting serving loop system gain of CD-ROM driver. In the invention, the spontaneous oscillation generated by the non-linear characteristics of delay circuit is used and applied to the automatic adjustment of loop gain for the serving system of CD-ROM driver so as to complete the characteristic measurement and adjustment for the serving system of CD-ROM driver. In addition, the structure of the invention is simple, can be realized easily without the need of building extra testing signal (through the manner of using external force to compel to generate oscillation), and is easily realized in the digital system. Furthermore, the parameters of controller are automatically adjusted to compensate for the difference of controlled system such that the problems generated during the conventional mass production period such as manual adjustment and time consumption can be solved.
Patent TW-434086-B (TW)
Title: Method and device for feeding a fluid mixture into a rotating machine part
Inventor: OTT STEPHAN
IPC: B23Q11/10
Filed: 1998-01-23
Granted: 2001-05-16
Abstract: The present invention relates to a method and a device for feeding a fluid mixture (4) into a rotating machine part (11) with a rotary joint (3) leading from a stationary (2) into the rotating or rotatable machine part (1, 11), the fluid mixture (4) being fed to a point in the rotating machine part (1, 11) remote from the rotary joint (3). In order to provide a method and device for feeding a fluid mixture of at least two different fluids from a stationary into a rotating machine part, which method and device permit the setting of substantially any desired relative proportions of the fluid components, especially a very considerable reduction of one of the components in relation to the other, wherein the fluid mixture nevertheless arrives at a point remote from the rotary joint in the desired relative composition, it is proposed according to the invention, as far as the method is concerned, that the fluid components be fed separately through the rotary joint (3), the mixture (4) with the desired relative proportions being produced only inside the rotating machine part (1) in the vicinity of the actual point of use. As far as the device is concerned, it is proposed that the rotary joint (3) comprise two separate feed lines (16, 17) each for one component of the fluid mixture, wherein a first feed line (16) is arranged centrally along the axis of rotation (10) of the rotating machine part (1, 11) and the second feed line (17) is arranged outside the axis of rotation (10).
Patent TW-369579-B (TW)
Title: Washing machine
Inventor: CHO MIN-SU
IPC: D06F39/00
Filed: 1998-02-05
Granted: 1999-09-11
Abstract: A sort of washing machine, comprising a washing water spurting apparatus for the injection of washing water upward to above the center of the pulsator, being the washing water led by at least one water tube assembled with the pulsator having on its lower surface a plurality of first rib-shaped objects and in the recessed tank on the lower surface a plurality of second rib-shaped objects. Each of the first rib-shaped object is spaced from the water inlet of the water tube at a predetermined distance and the second ribs located at a height lower than the front gate of the water inlet when calculated from the lower surface of the pulsator. When the pulsator turns, the first and the second rib-shaped objects make the rinse water be let into the water inlet of the water tube more smoothly and the second rib-shaped objects prevent the pulsator and the rotation blade from deformation.
Patent TW-365073-B (TW)
Title: Solid oxide fuel cell operable over wide temperature range
Inventor: RUKA ROSWELL J
IPC: H01M8/00
Filed: 1998-03-26
Granted: 1999-07-21
Abstract: Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.
Patent TW-352350-B (TW)
Title: Method and apparatus for automatically adjusting air pressure in a pneumatic weld head
Inventor: AL-NABULSI TALAL M
IPC: B23K11/24
Filed: 1998-06-12
Granted: 1999-02-11
Abstract: A weld head for welding a work piece includes: an electrode; a pneumatical cylinder, including a actuated shaft connected to the electrode in response to the hydraulic pressure fluid in the cylinder and flowing is the first direction to down press the electrode on the work piece and in response to the hydraulic fluid in the cylinder flowing in the opposite direction to retreat the electrode; an electric switch with an open position and a close position, while the electrode is with the preset weld force exerted onto the work piece, the switch turns to the close position; at the close position, an electric energy is supplied to the electrode; when the switch is in the close position, the air cylinder will maintain the weld force between electrode and the work piece, this is an ideal pressure; after an adequate amount of energy is applied to the electrode, the electrode will retreat back, this retreating action causes the switch to turn on.
Patent TW-376557-B (TW)
Title: Method and device to produce a chip-substrate-connection as well as soldering-medium therefor and semiconductor-element with a semiconductor-chip
Inventor: REICHERT HANSJORG
IPC: B23K35/32
Filed: 1998-06-25
Granted: 1999-12-11
Abstract: This invention relates to a method and a device to produce a chip-substrate-connection through alloy or hard-solder by the use of a two- or more-component solder-medium with at least two metal-containing components X and Y, whereby the 1st component X has special gold or similar noble metal, and the 2nd component Y is used at the soldering process through reaction or solution in said to-be-connected materials or layers. Said solder-medium has an over-eutectical concentration of the 2nd component Y. In addition, this invention relates to a solder-medium for the production of a chip-substrate-connection, as well as a semiconductor element with a semiconductor-chip (1) which is fixed on a substrate through alloy or hard-solder.
Patent TW-443051-B (TW)
Title: Method and system for radio frequency measurement and automatic frequency planning in a cellular radio system
Inventor: SPORRE MATTS
IPC: H04W72/08
Filed: 1998-07-01
Granted: 2001-06-23
Abstract: A mobile station operating in a digital cellular system such as GSM is ordered to perform signal strength measurements on non-BCCH carrier frequencies by including an identification of those frequencies twice in the bit map comprising the BA-list. The mobile station formats a measurement report containing signal strength measurements of both BCCH and non-BCCH carrier frequencies and send it to the network which uses the data for automatic frequency allocation within the network.
Patent TW-474817-B (TW)
Title: Kits for treatment of multiple sclerosis using consensus interferon
Inventor: MARTIN DAVID
IPC: A61K38/21
Filed: 1998-07-29
Granted: 2002-02-01
Abstract: The present invention encompasses kits for treating multiple sclerosis comprising a therapeutically effective amount of IFN-con, either alone or in combination with another active agent.
Patent TW-589475-B (TW)
Title: Liquid crystal display
Inventor: NONAKA MASANOBU
IPC: G02F1/1333
Filed: 1998-09-29
Granted: 2004-06-01
Abstract: The invention relates to a liquid crystal display using granular spacer to keep the relative gap between substrates. Seal a liquid crystal layer between the relatively disposed matrix substrate with the specified gap and relative substrate; meanwhile, dispose most of granular spacer for keeping gap. Form a transparent insulation film on the signal line, scan line, switch component and pixel electrode of matrix substrate. Pixel electrode and all relative fields are formed with multiple openings against the spacer movement within the insulation film.
Patent TW-400550-B (TW)
Title: Field-effect transistor with a trench isolation structure and a method for manufacturing the same
Inventor: TOGO MITSUHIRO
IPC: H01L21/763
Filed: 1998-10-01
Granted: 2000-08-01
Abstract: Into the portion of a silicon substrate which lies in the vicinity of a trench isolation portion, ions such as argon for enhancing the oxidation rate are implanted. Or, nitrogen ions for lowering the oxidation rate are implanted into the portion of the silicon substrate other than the portion thereof lying in the vicinity of the trench isolation portion. Thereafter, thermal oxidation is performed, so that a gate insulation film is thereof becomes equal to or greater than the thickness of the center portion thereof. Thus, the deterioration of the breakdown voltage of the insulation film can be prevented, because the gate insulation film becomes thin in the end portion of the gate electrode.
Patent TW-416122-B (TW)
Title: An etch stop layer for dual damascene process
Inventor: SOMEKH SASSON
IPC: H01L21/768
Filed: 1998-10-28
Granted: 2000-12-21
Abstract: The present invention provides a carbon based etch stop, such as a diamond like amorphous carbon, having a low dielectric constant and a method of forming a dual damascene structure. The low k etch stop is preferably deposited between two dielectric layers and patterned to define the underlying interlevel contacts/vias. The second or upper dielectric layer is formed over the etch stop and patterned to define the intralevel interconnects. The entire dual damascene structure is then etched in a single selective etch process which first etches the patterned interconnects, then etches the contacts/vias past the patterned etch stop. The etch stop has a low dielectric constant relative to a conventional SiN etch stop, which minimizes the capacitive coupling between adjacent interconnect lines. The dual damascene structure is then filled with a suitable conductive material such as aluminum or copper and planarized using chemical mechanical polishing.
Patent TW-405094-B (TW)
Title: Improved instruction dispatch mechanism for a guarded vliw architecture
Inventor: MEHRA VIJAY KRISHNA
IPC: G06F9/38
Filed: 1998-11-06
Granted: 2000-09-11
Abstract: A very long instruction word (VLIW) architecture describes a processor comprising multiple functional units operating in parallel. A very long instruction word contains a plurality of fields or issue slots for specifying which operations are to be performed by the functional units. Execution of an operation can be inhibited by a guard value specified in the issue slot. Instructions are dispatched in such a guarded VLIW architecture by routing one of a plurality of fields issued for a common functional unit based on the guard value. Thus, an instruction word may contain a greater number of issue slots than there are functional units.
Patent TW-423021-B (TW)
Title: Gas-discharge-lamp with separately operable electrode-groups aw well as signal lamp, indicator and indoor illuminant
Inventor: VOLLKOMMER FRANK DR
IPC: H01J61/04
Filed: 1998-12-10
Granted: 2001-02-21
Abstract: Said gas-discharge-lamps have electrode-structures for dielectrically preventive discharge, in which the electrodes are divided into separately operable groups for independently switchable operation.
Patent TW-430575-B (TW)
Title: Process and device for producing a ferritically rolled steel strip
Inventor: BODIN ANDRE
IPC: B22D11/12
Filed: 1999-01-15
Granted: 2001-04-21
Abstract: Process for producing a ferritically rolled steel strip, in which liquid steel is cast in  a continuous-casting machine to form a slab and, utilizing the casting heat, is conveyed through a furnace device, undergoes preliminary rolling in a preliminary rolling device and, in a final rolling device, is finishing-rolled to form the ferritic steel strip with a desired final thickness, in which process, in a completely continuous, an endless or a semi-endless process, the slab is rolled in the austenitic range in the preliminary rolling device and, after rolling in the austenitic range, is cooled to a temperature at which the steel has a substantially ferritic structure, and the strip is rolled, in the final rolling device, at speeds which substantially correspond to the speed at which it enters the final rolling device and the following thickness reduction stages, and in at least one stand of the final rolling device, the strip is ferritically rolled at a temperature of between 850 DEG C and 600 DEG C, and, after leaving the final rolling device, is cooled rapidly to a temperature below 500 DEG C in order substantially to avoid recrystallization.
Patent TW-413897-B (TW)
Title: Borderless contact to diffusion with respect to gate conductor and methods for fabricating
Inventor: BRUCE JAMES A
IPC: H01L21/60
Filed: 1999-02-09
Granted: 2000-12-01
Abstract: A borderless contact to diffusion with respect to gate conductor is provided by employing a double insulating film stack as a mask for defining the gate conductor hsapes for the entire chip and providing a relatively thin damage preventing layer on exposed conductive layer following defining the gate conductor shapes. In one embodiment, a borderless contace is provided by forming an insulating layer on a substrate, providing a conductive layer on the insulating layer, providing a second insulating layer on the conductive layer, providing a third insulating layer on the second insulating layer, removing preselected portions of the second and third insulating layers, providing a damage preventing layer in those areas where the second and third insulating layers have been removed, removing preselected portions of the third insulating layer, removing the damage preventing layer, removing exposed portions of the conductive layer, and removing now exposed portions of the second insulating layer.
Patent TW-463206-B (TW)
Title: Continuous gas saturation system and method
Inventor: NURMI DOUGLAS B
IPC: H01L21/205
Filed: 1999-02-26
Granted: 2001-11-11
Abstract: Provided are a system and method for saturating a gas with a vapor from a liquid chemical. The system includes: (a) a saturation vessel connected to receive a liquid chemical and a carrier gas; (b) a gas sparger in the saturation vessel for sparging the carrier gas into the liquid chemical; (c) means for maintaining the liquid chemical in the saturation vessel at a substantially constant level; (d) means for controlling the temperature of the liquid chemical in the saturation vessel to a desired value, comprising (i) a system for cooling the liquid chemical, and (ii) a heater inside the saturation vessel extending vertically in the liquid a distance at least half of the height of the liquid chemical level for heating the liquid chemical; and (e) means for controlling the pressure of the saturated gas to a desired value. The invention also relates to novel methods and systems for controlled delivery of a vaporized liquid chemical. The invention has particular applicability to the semiconductor manufacturing industry.
Patent TW-418476-B (TW)
Title: Apparatus and method for measuring the pressure distribution on the wafer surface
Inventor: LIN CHI-FA
IPC: H01L21/66
Filed: 1999-03-02
Granted: 2001-01-11
Abstract: An apparatus and method for measuring the pressure distribution on the wafer surface. The method comprises: firstly, defining the test pattern on the wafer surface and attaching the pressure sensing film on the surface of test pattern; then, applying pressure on the pressure sensing film to get the corresponding pressure pattern; and based on the pressure pattern, comparing the color density distribution to get the pressure distribution on the wafer surface. Further, the apparatus comprises: a chemical mechanical polishing apparatus used to allocate the wafer, apply pressure on the pressure sensing film and deduce corresponding pressure pattern; an image capturing device and an image processing device used to capture the pressure pattern and conduct a comparison of the pressure pattern, respectively, so as to deduce the pressure distribution on the wafer surface.
Patent TW-412837-B (TW)
Title: Method of making a trench capacitor
Inventor: TSAI HSIN-CHUAN
IPC: H01L21/8242
Filed: 1999-03-31
Granted: 2000-11-21
Abstract: The present invention relates to a method of making a trench capacitor, particularly a trench capacitor with increased trench area. The method comprises providing a semiconductor substrate; forming a first trench on the semiconductor substrate, in which the first trench reaches a first predetermined depth in the semiconductor substrate; forming a first spacer on the wall of the first trench in which the first spacer comprises a second spacer and a third spacer, the second spacer being located on the bottom of the first trench, and the third spacer being located on the opening of the first trench on the semiconductor substrate; etching the semiconductor substrate in the first trench to a second predetermined depth by aligning the first spacer to form a second trench; doping the semiconductor substrate in the second trench to form a first conductive layer; oxidizing the first conductive layer to form an oxide layer in which the thickness of the oxide layer is smaller than the first conductive layer; removing the oxide layer to form a second conductive layer; removing the first spacer; forming a dielectric layer on the second conductive layer; and forming a third conductive layer on the dielectric layer.
Patent TW-436859-B (TW)
Title: Disc regeneration apparatus and RF amplifying control circuit
Inventor: HAYASHI YASUHIRO
IPC: H04N5/85
Filed: 1999-04-23
Granted: 2001-05-28
Abstract: The present invention is to provide the disc regeneration apparatus and RF amplifier control circuit used in this apparatus, in which the balance action of RF amplifier can be stably performed even though looking for the triggering of VCO clock for the data PLL is abruptly changed when CAV regenerates. The solving means is described in the following. For the DVD system, in order to use data regeneration clock to control RF balance, voltage control oscillator (VCO) 31 and low pass filter 30 are installed for the special purpose of RF balance. Because the low frequency composition of the voltage control oscillator that follows data rate is used to control this voltage control oscillator, the RF amplifier that smoothly follows the variation of data rate can be realized. Therefore, even when the oscillation of VCO clock for data PLL 19 is abruptly changed, because the oscillation frequency of RFVCO for controlling the balance characteristic of RF amplifier 15 also smoothly follows, the balance action of RF amplifier can be stably performed.
Patent TW-404053-B (TW)
Title: A method of utilizing  self-aligned contact via to fabricate the capacitor on the bitline in DRAM
Inventor: JENG SHIANG-YUAN
IPC: H01L27/108
Filed: 1999-04-27
Granted: 2000-09-01
Abstract: This invention relates to a method of fabricating the capacitor on the bitline (COB) by using self-aligned contact via in DRAM. After the formation of the gate electrode of FET, the spacer is formed by the first Si3N4 as etch- stop layer, meanwhile part of the Si3N4 resides on said source/drain region as the etch-stop layer. Self-aligned contact hole etches the source/drain region of the first oxide, and poly-silicon contact plug is formed on all self-aligned contact hole. Next, deposit the second oxide, and etch to form the plug for usage of contact hole to bitline.