baber/WOPTO huggingface dataset:
Patent JP-H0194484-A (JP)
Title: Lsi designing device
Inventor: AOKI MASAO
IPC: H01L21/8234
Filed: 1987-10-07
Abstract: PURPOSE:To prevent the long-term reliability characteristics of an MOSLSI from deteriorating by incorporating the model of a channel hot carrier HC phenomenon to a circuit simulator, and automatically decide a deteriorated transistor (TR), and automatically outputting the name of the TR. CONSTITUTION:The titled device possesses a data input means, an LSI characteristic simulation means, the long-term reliability deterioration characteristic calculating means of the MOSFET, a deteriorated TR and deteriorated sub- circuit deciding means, and a data output means. A circuit simulator is used for the LSI characteristic simulation means, and the time change of an output signal according to the time change of an input signal and a voltage change at every node is obtained. From this result, the deciding reference characteristics of the deteriorated TR are calculated by the model of the HC phenomenon, compared with the deciding reference value of the deteriorated TR designated by the input data beforehand, and the deteriorated TR or the deteriorated sub-circuit is automatically extracted. Thus, the long-term reliability characteristics of the MOSLSI due to an HC effect can be prevented from deteriorating.
Patent JP-H08115865-A (JP)
Title: Method for forming alignment mark
Inventor: INOTA YASUYOSHI
IPC: G03F7/20
Filed: 1994-10-18
Abstract: PURPOSE: To provide a method for forming alignment mark which can improve the alignment accuracy of the pattern of a buried diffusion layer and that of LOCOS oxide film and reduce cost. CONSTITUTION: A mask 12 is formed on the surface of a substrate 11 in a first process. Then, in a second process, lithography and etching are performed. Then, a first opening 12a and a second opening 12b are provided at the mask 12 and further the surface layer of the substrate 11 is eliminated from the second opening 12b for forming an alignment mark 15. Then, in a third process, an impurity 16 is introduced into the substrate 11 via the first opening 12a of the mask 12, thus forming a buried diffusion layer 18.
Patent JP-H03117055-A (JP)
Title: Exchange connecting device for packet exchange
Inventor: ASAKURA JUNJI
IPC: H04L12/64
Filed: 1989-09-29
Abstract: PURPOSE:To prevent a packet signal of a call of a specific signal generating pattern from being influenced by a packet signal of other signal generating pattern by connecting the signal to each separate line concentrating switch circuit at every signal generating pattern. CONSTITUTION:The device is provided with a first switch part 32 constituted of plural switch circuits 33-1-33-n for bringing a packet signal to which service class information classified at every equality of a signal to exchange connection to an outgoing line corresponding to its service class. Also, the device is provided with a second switch part 24 constituted of plural switch circuits 36-1-36-n for concentrating each outgoing line of this first switch part 32, respectively at every same service class, and bringing a packet signal supplied from its outgoing line to exchange connection to an outgoing line corresponding to a physical address set and added in accordance with its call setting information. In such a way, the exchange connection is executed at every service class corresponding to the quality of the supplied package signal, and it does not occur that the packet signal generated by a prescribed pattern is influenced by other packet signal.
Patent JP-H0657143-A (JP)
Title: Ultraviolet-curable composition
Inventor: NAKAJIMA KUNIHIKO
IPC: C08L83/06
Filed: 1992-08-07
Abstract: PURPOSE:To obtain the composition which can thicken quickly on exposure to ultraviolet rays, is good in workability and is excellent particularly in initial pressure resistance in the assembling step. CONSTITUTION:This composition comprises 5-100 pts.wt. (meth)acrylate monomer of the formula [wherein R is H or methyl; and x is isobornyl, dicyclopentenyl, 1,2,2,6,6-pentamethylpiperidinyl or the like], 100 pts.wt. polyorgano-siloxane terminated with a silanol group and having a viscosity of 100-1000000cP at 25 deg.C, 0.01-5 pts.wt. organo-silane containing at least one hydrolyzable group in the molecule (e.g. methyltrimethoxysilane), and a photopolymerization catalyst (e.g. acetophenone) and a condensation catalyst (e.g. a metal salt of an organic carboxylic acid).
Patent JP-H04135017-A (JP)
Title: Frame structure for bending machine
Inventor: KOYAMA JUNICHI
IPC: B30B15/04
Filed: 1990-09-25
Abstract: PURPOSE:To assure the high accurate bending angle without generating the variation of bending angle for the bending products by specifying the length of the upper part arm and the lower part arm of the column part and the length of the part of the above column part to be counter-balanced. CONSTITUTION:C type frame is composed of the upper part arm and the lower part arm set at the upper/lower part of a nearly straight column part 3C of the frame 3 on the bending machine 1. When the length of the above upper part arm is made l1, an inclining angle is theta1, the length of the lower part arm is l2, an inclining angle is theta2, and the length of the part to be counter-balanced of the above column part is made L, the structure satisfies the equation I. By adopting this frame structure, even if the frame is influenced with the heat and heat transfer, the blade interval distance between the punch P set on the upper frame and the die D set on the lower frame is kept constant always. Therefore, the variation is not generated at the bending angle of each bending products, the bending angle of high accuracy can be obtained.
Patent JP-S63108211-A (JP)
Title: Measuring instrument for electron beam length
Inventor: MATSUOKA GENYA
IPC: H01J37/22
Filed: 1986-10-24
Abstract: PURPOSE:To easily evaluate and analyze a processing method for finding pattern size from signal waveforms and investigate the cause of waveform abnormality by displaying a detection signal waveform and waveforms in and after processing on the same screen, and display- ing a marker position upon them together. CONSTITUTION:A signal smoothing circuit 8 and a maximum and minimum detecting circuit 9 are provided to perform signal processing, and memories 16-19 for storing processing results by the circuits are provided; and the marker position is stored in a marker position memory 20 and a display device 10 reads out the contents of the memories 16-20 in order and displays waveforms and markers. Namely, the detection waveform and waveforms in and after the processing obtained from a pattern to be measured are displayed at the same time and two pattern edge positions corresponding to pattern width found by the waveform processing are displayed on the respective waveforms with the markers. Consequently, the waveforms before and after the processing are compared with each other and the correspondence relation between the waveforms and pattern edge positions corresponding to the pattern width becomes clear.
Patent JP-H1197419-A (JP)
Title: Etching method and manufacture of semiconductor device
Inventor: MOTOYOSHI MAKOTO
IPC: H01L21/302
Filed: 1997-09-17
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can form highly reliable wiring with almost no generation of detective connection and defective contact, by eliminating generation of most of the pattern detects caused by environmental dusts when a wiring groove or a connecting hole is formed in an insulating film. SOLUTION: On an interlayer insulating film 13 wherein a wiring groove is to be formed, the resist pattern wherein the pattern of the wiring groove is transferred is formed. With this resist mask as the mask, the interlayer insulating film 13 is etched. This resist pattern is removed. The same mask when this resist pattern is formed is used, and a resist pattern 17, wherein the pattern of the wiring groove is transferred is formed on the interlayer insulating film 13. With the resist pattern 17 as the mask, the interlayer insulating film 13 is etched again.
Patent JP-H07105267-A (JP)
Title: Method for designing semiconductor device
Inventor: TSUNENO KATSUMI
IPC: H01L29/00
Filed: 1993-10-08
Abstract: PURPOSE:To shorten the period required to design the semiconductor device. CONSTITUTION:Process data 107 consisting of process conditions of plural impurity introducing processes 106 are inputted to a computer to generate a density profile 108 showing the density distribution state of impurity atoms of a semiconductor element on the basis of the process data 107, and the process data 107 are altered and inputted again. To generate the density profile 108 corresponding to the altered process data 107, density profiles (element density profile) corresponding to the respective impurity introducing processes 106 which constitute the process data 107 before the alteration and element density profile (110) corresponding to altered impurity introducing processes 106 are generated, and the element density profile (110) is subtracted from and added to the density profile 108 before the alteration.
Patent JP-H09153405-A (JP)
Title: Magnetically soft, dielectric composite material for high-frequency application, and manufacture thereof
Inventor: YAMAMOTO YUTAKA
IPC: H01F1/37
Filed: 1996-09-24
Abstract: PROBLEM TO BE SOLVED: To produce a magnetically soft, dielectric composite material for high-frequency applications by a combination of a magnetically soft alloy with a resin, which is capable of being formed in a desired shape, has good characteristics as a soft magnet at high frequency, and shows low dielectric loss. SOLUTION: A magnetically soft, dielectric composite material for high-frequency applications comprises powder of a magnetically soft alloy expressed by AaMbDc, and a resin, where A is any of Fe, Co and Ni, or a mixture of them; M is any of Hf, Zr, W, Ti, V, Nb, Mo, Cr, Mg, Mn, Al, Si, Ca, Sr, Ba, Cu, Ga, Ge, As, Se, Zn, Cd, In, Sn, Sb, Te, Pb and Bi, or a mixture of them; D is O, C, N and B, or a mixture of them; and a, b and c satisfy the relations 40<=a<87,0<b<=20, 0<c<=50.
Patent JP-H11140730-A (JP)
Title: Apparatus in spinning preparatory machine such as card or drawframe, having fiber guide member
Inventor: LEIFELD FERDINAND
IPC: D01H13/04
Filed: 1998-09-07
Abstract: PROBLEM TO BE SOLVED: To provide the subject apparatus having a fiber guide member designed to guide a web or sliver in a spinning preparatory machine such as a card or drawframe and release it as a single sliver, and flexibly adaptable to such a sliver passing through the fiber guide member so as to afford a high- quality sliver. SOLUTION: This apparatus has such a scheme that the ceiling surface and the floor surface of a fiber guide member is constructed with the respective outer circumferential surfaces 47a, 47b of a pair of delivery rollers 47, 48, a pair of guide wall elements 45, 46 of such shape as to converge toward the roller gap 50 of the delivery roller pair is disposed so that one or both of the guide wall elements 45, 46 is (are) made movable.
Patent JP-S62112361-A (JP)
Title: Complementary semiconductor device
Inventor: MAKITA KOJI
IPC: H01L27/06
Filed: 1985-11-11
Abstract: PURPOSE:To suppress the increase of the threshold of a P-type MOS FET and avoid formation of a P-N junction by a method wherein the respective upper part materials and the lower part materials of a 1st and a 2nd gate electrodes have different work function and insulating films are provided between the upper parts and the lower parts. CONSTITUTION:An N-type MOS FET is provided on an island region surrounded by a field oxide film 2 and a P-type MOS FET is provided on the film 2. A 1st gate electrode 7 of the N-type MOS FET is composed of the three-layer structure of an N-type polycrystalline Si pattern 6a, a nitride film pattern 5a and a P-type polycrystalline Si pattern 4a. Moreover, 9 2nd gate electrode 8 of the P-tpye MOS FET is composed of the three-layer structure of an N-type polycrystalline S i pattern 6b, a nitride film pattern 5b and a P-type polycrystalline Si pattern 4b. With this constitution, the increase of the threshold of the P-type MOS FET can be suppressed. Also, as the pattern 5a is provided between the pattern 6a and the pattern 4a of which the electrode 7 is composed, a P-N junction is not formed so that it is not necessary to provide connection to an Al wiring. Therefore, the integration of a device can be improved.
Patent JP-H0995473-A (JP)
Title: Production of betaine type amphoteric surfactant having low salt content
Inventor: DOUKI KADOFUMI
IPC: C07C231/12
Filed: 1995-09-29
Abstract: PROBLEM TO BE SOLVED: To produce a betaine type amphoteric surfactant having a low inorganic salt content according to simple operations. SOLUTION: Sodium monochloroacetate in an amount of 1mol (116.5g) is sufficiently dispersed in water in an amount of 5-10wt.% based on the whole reactional system and ethanol or isopropanol in an amount of 35-50wt.% based on the whole reactional system, and 0.80-0.95mol long-chain alkylamine or long- chain fatty acid amidoamine is added thereto and reacted with the resultant dispersion. Deposited inorganic salts are then filtered off after completion of the reaction and the resultant filtrate is heated under a reduced pressure to evaporate alcohols to obtain the objective surfactant.
Patent JP-H0194247-A (JP)
Title: Method for measuring mixed crystal ratio of compound semiconductor
Inventor: SHIRAKAWA FUTATSU
IPC: G01N21/63
Filed: 1987-10-06
Abstract: PURPOSE:To measure the mixed crystal ratio of the surface of a specimen as a function of a depth in a non-destructive manner in such a state that the specimen is placed in the air, by generating the exciting beam of light energy larger than the band gas of a mixed crystal by color laser. CONSTITUTION:The beam of Ar-laser 1 performs the beam pumping of color laser 3. When the beam of the color laser 3 is incident to a specimen 2 at a right angle to enter the part of a membrane, the electron and hole generated by excitation of said part respectively reach the terminal of a conductive band and that of a valence band to be again coupled with each other beforehand. At this time, photoluminescence is generated in the region from the surface of a specimen to the penetration depth of exciting beam and reflected by a half mirror 10 to be condensed by a lens system 4 and further incident to a spectroscope 5 to be spectrally diffracted. Next, the intensity of beam is measured at every wavelength by the spectroscope 5 and a photomultiplier tube 6. The output of the photomultiplier tube 6 is amplified by a lockin amplifier 7. Next, a signal is inputted to a computer 8 and a mixed crystal ratio can be calculated from a formula imparting the relation between the mixed crystal ratio and a band gap.
Patent JP-S59176205-A (JP)
Inventor: SUUZAN MERII KIYANTORERU
IPC: A61K8/00
Filed: 1983-12-26
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0585350-A (JP)
Title: Booster
Inventor: KAWAKADO SATOSHI
IPC: B60T13/57
Filed: 1991-09-30
Abstract: PURPOSE:To prevent the generation of pressure rise delay, defective return, pedal pressure increase, and the like by disposing a sleeve, extended parallel to a valve plunger, between the valve plunger and a reaction member on the valve plunger side. CONSTITUTION:In association with the advance of a valve plunger 11, the pressure receiving area of the valve plunger to a reaction member 22 is increased stepwise, and the power boosting ratio of power outputted to a braking device from an output rod 18 in relation to operating force supplied to an input rod 13 is reduced stepwise before reaching a reinforcing limit point. The change of brake operating feelings around the reinforcing limit point is thereby relaxed without lowering the power boosting ratio in a normal service region. Since the valve plunger 11 slides in a sleeve 23a to come in contact with the reaction members 21, 22, the internal pressure of the reaction member 22 on the valve plunger 11 side is applied only to the sleeve 23a but not to the valve plunger 11.
Patent JP-H08116235-A (JP)
Title: Surface acoustic wave device, manufacture thereof and system using same
Inventor: HIKINO OSAMU
IPC: H03H9/25
Filed: 1994-10-18
Abstract: PURPOSE: To realize an excellent frequency characteristic by suppressing an undesired reflection wave from an absorbing body. CONSTITUTION: An interdigital electrode 2 acting as an electromechanical transducer, an interdigital electrode 3 acting as an electromechanical transducer, and a shield electrode 4 arranged between them are provided on a piezoelectric substrate 1. Furthermore, an absorbing body 5 is provided to both ends on the piezoelectric substrate 1. The absorbing bodies 5 are used to absorb an undesired surface acoustic wave 6, and the shape of the end face of the absorbing bodies 5 opposite to the interdigital electrodes 2, 3 is formed to a rugged shape comprising lots of notches and projections. The pitch of the ruggedness is selected to be 50Aλ0 , where λ0 is a wavelength of the surface acoustic wave 6. Thus, even when the surface acoustic wave 6 reflects on the end face of the absorbing bodies 5, irregular reflection is caused and the undesired reflection wave from the end face of the absorbing bodies 5 to the electrodes 2, 3 is suppressed.
Patent JP-H0586273-A (JP)
Title: Resin composition for molding
Inventor: TOMITA TAKASHI
IPC: C08L67/02
Filed: 1991-09-30
Abstract: PURPOSE:To prevent the strength and the stiffness of a remolded material obtained by remolding a synthetic resin material having a high strength and a high stiffness from lowering not more than those in the original synthetic resin. CONSTITUTION:The objective composition contains a molding resin composition composed of polycarbonate/polybutylene terephthalate as the matrix resin and 2-60wt.% liquid crystalline polymer (e.g. liquid crystalline polyester or liquid crystalline polyesteramide) showing higher melting point than that of the matrix resin and capable of providing a molding in which the liquid-crystallized material of the blended liquid crystalline polymer has >=3 aspect ratio.
Patent JP-H02100433-A (JP)
Title: Voice compression dynamic switching device
Inventor: HATAKEYAMA YUKIO
IPC: H04B14/04
Filed: 1988-10-06
Abstract: PURPOSE:To always maximize the utilization efficiency of a transmission band by detecting a use state of a band and executing a dynamic allocation of the band corresponding to said state. CONSTITUTION:A control means 3 detects a band use state by utilizing an output of a voice compression pool 2, executes a dynamic allocation of a compression ratio so that the utilization efficiency of a transmission band becomes maximum from a result of detection, and thereafter, outputs compression ratio information to the voice compression pool 2. Subsequently, a dynamic switch control signal is sent out to a separate route band dynamic switching means 4, and also, an address and the compression ratio information are added to an output of the voice compression pool 2. That is, when a result of detection of a band use state by the control means 3 shows that all bands are being used, the circuit capacity is increased by enhancing a compression ratio and bringing one band to 2-division, 4-divisions or 8-divisions, and when an unused band exists, a high quality voice transmission is executed by lowering the compression ratio. In such a way, the utilization efficiency of a transmission band always becomes maximum.
Patent JP-H1098388-A (JP)
Title: Decoding method
Inventor: MIYASAKA SHUJI
IPC: H03M7/00
Filed: 1996-09-25
Abstract: PROBLEM TO BE SOLVED: To conduct inverse grouping processing with a small table size and at a small arithmetic step by using two table values, two multiplication operations, one bit shift-down processing and one subtraction. SOLUTION: In a step 12, an input signal G grouped by a 3digit ternary number is multiplied with a value of a tableA[1], the result is shifted down by an 1,(:8)-bit-to obtain a quotient, when the input signal G is divided by 9 and to obtain a 3rd digit value (a) of the 3-digit ternary number. A value of a table B[1] is multiplied with the value (a), the resulting value is subtracted from the input signal G to obtain a residue when the input signal value G is divided by 9. In step 13, a 2nd digit value (b) and a residue when the residu e in the step 12 is divided by 3 are obtained by using values from a tableA2 and a table B2 for the residue in the step 12. In a step 14, th e residue obtained in the step 13 is used for a 1st digit value (a).
Patent JP-S62112862-A (JP)
Inventor: FUNAKI GANTAN
IPC: E04F13/14
Filed: 1985-11-13
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S60132925-A (JP)
Inventor: DEEBITSUDO FUARAA
IPC: C07C31/04
Filed: 1984-11-28
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H11151716-A (JP)
Title: Work plate for fixing crystal
Inventor: KAESER MAXIMILIAN
IPC: B28D5/00
Filed: 1998-09-07
Abstract: PROBLEM TO BE SOLVED: To avoid the formation of a groove when a wafer is cut from a crystal of a semiconductor material by using a wire saw by providing a section adjacent to the crystal of the semiconductor material and having hardness almost the same with that of the crystal to a work plate. SOLUTION: The section 3 of a composite constituted in a laminar form adjacent to the crystal 2 of a work plate 1 composed of the composite comprises a material having hardness equal to or almost same to that of the crystal 2. When the crystal 2 comprises silicon, the section 3 is pref. composed of a shell of glass or silicon coinciding with the crystal 2 in shape. At least one section 4 additionally formed so as to be adjacent to the section 3 comprises a material markedly softer than the material of the section 3 adjacent to the crystal 2 and, concretely, graphite or a material having hardness almost same to that of graphite is pref. Further, the sections 3, 4 of the composite constituted in the laminar from are pref. bonded mutually by an adhesive. By using this work plate 1, the formation of a groove can be avoided.
Patent JP-H0893942-A (JP)
Title: Seal mechanism for valve assembly
Inventor: HAYASHI FUMIYA
IPC: F16K11/07
Filed: 1994-09-21
Abstract: PURPOSE: To provide a seal mechanism for a valve assembly which does not have gasket cut of position and keeps the seal function favorably. CONSTITUTION: A recess groove for surrounding plural portion open on a valve setting face 2a of a base 2 and on an opposite face 3a of a changeover valve 3 and partitioning similar shape between the respective ports are disposed on said faces. A protruding ridge portion similar in shape to the recess groove, of which width is smaller and height is larger than the recess is disposed on seal faces on both sides of a gasket 4. The respective ridge portions are inserted into the respective recess grooves, so that a gasket is set in between a changeover valve and the base. Accordingly, by means of the protruding ridge portion and the recess grooves, position of the gasket is retained. The protruding ride portion is pressed with the recess groove and so that the seal function is favorably.