baber/WOPTO huggingface dataset:
Patent KR-20000010131-A (KR)
Title: Silicon-on-insulator device
Inventor: LEE SANG HWAN
IPC: H01L21/336
Filed: 1998-07-30
Abstract: PURPOSE: A silicon-on-insulator device is provided to improve the withstand characteristics by increasing the withstand voltage of the device. CONSTITUTION: The silicon-on-insulator device includes a silicon substrate(1), a silicon-on-insulator substrate having a burred oxide layer(2) and a silicon-on-insulator body region(3), a transistor(20) having a source(18) and a drain(19), a separate element region formed in the silicon-on-insulator body region of both side of the transistor, and a body/substrate contact portion formed into the separate element region so as to contact the silicon substrate and the silicon-on-insulator body region at the same time. Thereby, it is possible to remove a substrate floating effect by forming the body/substrate contact portion so as to contact the silicon-on-insulator body region and the silicon substrate.
Patent KR-20000012983-A (KR)
Title: Fast renormalizing method in jbig algorithm
Inventor: KIM YOUNG HOON
IPC: H04N1/41
Filed: 1998-08-04
Abstract: PURPOSE: A fast normalizing method in a Joint Bi-level image experts group(JBIG) algorithm capable of calculating the number of a register value having code information to be shifted in a left direction, setting a relation with a count variable CT, previously calculating a practicable value, selecting the value according to a corresponding condition is provided. CONSTITUTION: A fast renormalizing method in a JBIG algorithm, the method comprising: calculating temporary register values according to all practicable cases of a register value having code information before performing a renormalization; multiplexing and selecting one of temporary register values with respect to the register value transmitted from a step prior to the renormalization; calculating register outputs in all cases when renormalization with respect to the selected contemporary register values is generated; and selecting one among the register output values.
Patent KR-20000013145-A (KR)
Title: Method of providing virtual private network service in mobile communication network
Inventor: LEE HYUN JUNG
IPC: H04B7/26
Filed: 1998-08-05
Abstract: PURPOSE: A method of providing a virtual private network service in mobile communication network makes it possible to provide the virtual private network service in the mobile communication network. CONSTITUTION: This method includes the steps of: setting up in a home subscriber database necessary for VPN service and database including a group table having a group number, subscribers and representative billing number of the VPN, and a membership; transmitting a title indication message with a trigger type of origination trigger to a switching center in order that the home position register requests a registration of a mobile subscriber's VPN service; registering the mobile subscriber's VPN service by storing the origination trigger type information by the switching center; transferring a title indication message without the origination trigger's trigger type to the switching center in order to request removal of the mobile subscriber's VPN service; and removing the mobile subscriber's VPN service in the switching center. This invention provides the VPN service in the mobile communication network.
Patent KR-19990023646-A (KR)
Title: 반도체칩의 실장구조 및 실장방법
IPC: C09J7/02
Filed: 1998-08-17
Abstract: 본 발명에는 반도체칩을 실장하기 위한 실장구조 및 실장방법에 개시되어 있다. 이 구조는 복수의 범프가 형성된 반도체칩과, 범프의 형성위치에 대응하도록 범프가 접합되는 동으로 이루어진 배선패턴이 형성된 기판과, 위치결정시에 반도체칩과 기판을 접합하는 양면에 접착층이 설치된 폴리이미드 테이프(8)를 구비하고 있다. 반도체칩과 기판 사이에 형성된 공간은 수지층에 의해 밀봉된다. 또한, 기판의 열팽창계수가 폴리이미드 테이프의 열팽창계수와 거의 같게 되도록 기판의 재료가 선택되어 있다. 상기 구조의 덕택으로, 범프와 회로패턴 사이의 접합력을 높여, 접촉불량이 발생할 가능성을 줄이고, 제조시의 온도변화에 의해 반도체칩의 표면에 크랙이 발생되는 것을 피할 수 있다.
Patent KR-20000014142-A (KR)
Title: Transmission/reception digit order control method
Inventor: KIM JAE HYUN
IPC: H04B7/26
Filed: 1998-08-14
Abstract: PURPOSE: A transmission/reception digit order control method is provided to prevent digit reversal between a base station and a terminal that can be generated in an environment of a wireless section by controlling transmission/reception digit order in the mobile communication system using CDMA technique. CONSTITUTION: This transmission/reception digit order control method includes the steps of initializing the next transmission DTMF (D(S)) as a call is set up; transmitting the DTMF (D(S)) with a Send Burst DTMF message if the Send Burst DTMF message occurs; and increasing the DTMF (D(S)) to modulo 8.
Patent KR-19990023980-A (KR)
Title: 반도체 장치
IPC: H01L23/58
Filed: 1998-08-28
Abstract: 본 발명은, 반도체 메모리에서 다이싱 시의 크랙에 의해 발생하는 크랙 부스러기를 미소화할 수 있도록 하는 것을 가장 주요한 특징으로 한다. 
     예를 들면, 선택 트랜지스터의 게이트 전극부(13)의 형성과 동시에, 다이싱 라인(2)에 대응하는 영역(10b) 내의 웨이퍼(10)의 주표면 상에, 게이트 산화막(14), 폴리실리콘막(15), WSi막(16) 및 SiN막(17)을 적층한다.  그리고, 이들을 패터닝하여 소자 분리 영역(12)의 상호간에 다이싱의 방향에 따라 평행하게, 상기 게이트 전극부(13)와 거의 동일한 배선 구조를 갖는 단일의 더미 패턴(18)을 형성한다.  이 더미 패턴(18)에 의해 디싱을 방지함과 동시에, 다이싱 시의 응력 집중을 분산시킴으로써 크랙 부스러기를 미소화시키는 구성으로 되어 있다.
Patent KR-19990029773-A (KR)
Title: 일정한 슬루율 증폭기
IPC: H03K5/02
Filed: 1998-09-14
Abstract: 입력 신호내의 대응하는 편위(excursions)와 관련된 각각의 포지티브-진행(positive-going) 및 네거티브-진행(negative-going) 전압을 발생하는 일정한 슬루율 증폭기는 정밀 내부 슬루율 제어 기준을 갖는다.  이런 슬루율을 정의하는 전압은 회선으로부터 감결합되며, 충실히 입력 신호를 추적하고, 규정된 슬루율 및 상승/하강 시간 설계사양을 따르는 증폭된 출력 신호로 회선을 구동할 수 있게 한다.  일정한 슬루율 증폭기는 비전이 신호 조건 동안의 전력 손실을 최소화하도록 구성되지만, 입력 신호에 따라 한 상태에서 다른 상태로 회선을 급격히 구동하는 실질적인 전류를 제공한다.
Patent KR-20000019886-A (KR)
Title: Lcd having anti static circuit and display testing method using thereof
Inventor: LEE JOO HYUNG
IPC: G02F1/136
Filed: 1998-09-16
Abstract: PURPOSE: An LCD having anti static circuit and display testing method using the circuit is provided to improve an anti static capability of an LCD and a detecting force of a display quality test by forming a path of an electrostatic occurred in a voluntary line. CONSTITUTION: A plurality of gate lines(G1,G2,G3,..,Gn) is horizontally formed on an insulating substrate(100). A plurality of data lines(D1,D2,D3,...,Dm) are vertically formed n the insulating substrate(100). Gate lines(G1,G2,G3,..,Gn) and data lines(D1,D2,D3,...,Dm) are connected to a COG IC(200). Ground lines(450,460,470,480) are crossed over gate lines(G1,G2,G3,..,Gn) and data lines(D1,D2,D3,...,Dm) and pads(410,420,430,440) are connected to the end of ground lines(450,460,470,480). Diodes(d1,d5,d19,d23) are connected from the ground line(450) to data lines(D1,D3) and gate lines(G2,G4) in a forward direction. Diodes(d2,d6,d20,d24) are connected from the ground line(460) to data lines(D1,D3) and gate lines(G2,G4) in a backward direction. Diodes(d3,d7,d17,d21) are connected from the ground line(470) to data lines(D1,D3) and gate lines(G2,G4) in a forward direction.
Patent KR-20000020668-A (KR)
Title: Polymer for manufacturing chemical amplifying type resist and resist compound thereof
Inventor: SEO DONG CHEOL
IPC: G03F7/039
Filed: 1998-09-23
Abstract: PURPOSE: A polymer for manufacturing chemical amplifying type resist and resist compound having polymer is provided to easily adjust a sensitivity by adjusting a kind of novonen derivative and a constance weight of novonen derivative. CONSTITUTION: A polymer for manufacturing chemical amplifying type resist comprises a side chain alkyl group having an acetyl group, a t-butyl oxycarbonyl group, a cyclohexane carbonyl group, an adamantan carbonyl group, and a bicycle£2,2,1|heptane methyl carbonyl group; a ring form or a multi-ring form alkyl group; an alkyl carbonyl group; a side chain alkyl carbonyl group; a ring form or multi-ring form alkyl carbonyl group. The polymer includes a side alkyl group having a methyl group, a t-butyl group, an iso-propyl group, an adamantyl group, and a bicycle£2,2,1|heptane methyl group; a ring form or a multi-ring form alkyl group.
Patent KR-19990030182-A (KR)
IPC: A21C11/00
Filed: 1998-09-28
Abstract: The present invention concems a method and an apparatus for producing a disk of pizza dough ready for filling and baking using the centrifugal force. The system expanding the pizza dough under the influence of the centrifugal force is known for a long time. The pizzaiolo (pizza baker) apply it twirling the disk of dough (overhead) in the room for expanding its diameter. Other known mechanical systems for this purpose provide very complicated devices equipped with radially oscillating levers which should guide the dough in its radial expansion. The present invention on the other hand is characterized in that the expansion of the diameter of the disk of dough under the influence of the centrifugal force is effected using an apparatus of very simple design consisting essentially of two plates (2, 3) arranged coaxial one supported by the other. The method proposed presupposes that the dough be prepared first as a preliminary disk (1) of dough the diameter of which ranges between a third to one half of the desired final diameter of the dough disk, and that this preliminary disk (1) be subject to the influence of the centrifugal force in a room determined on both sides by two rotating plane surfaces. The great simplicity of the apparatus realising the present invention permits its large scale application in every small pizzeria. <IMAGE>
Patent KR-20000021906-A (KR)
Title: Semiconductor device and method of manufacturing the same
Inventor: PARK JONG HUN
IPC: H01L21/00
Filed: 1998-09-30
Abstract: PURPOSE: A method of manufacturing a semiconductor device is provided to improve a tunneling effect by reducing the vicinity of an open tunnel of the semiconductor device. CONSTITUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a photoresist pattern on a semiconductor substrate having an impurity region, a gate oxidation layer and an insulation layer being formed on the substrate; perfectly etching the insulation layer not masked by the photoresist pattern by using the photoresist pattern as a mask and forming a tunnel by etching the gate oxidation layer to a predetermined depth; scattering a seed on the semiconductor substrate having the tunnel; wet-etching the insulation layer in the vicinity of the tunnel of the semiconductor substrate on which the seed is scattered, and the seed on the insulation layer; forming a plurality of pins by wet-etching the gate oxidation layer by using as a mask the seed on the gate oxidation layer of the tunnel of the semiconductor substrate having a wet-etched nitride layer; forming a thin oxidation layer on the semiconductor substrate on which a plurality of pins are formed; and forming a polysilicon layer on the semiconductor substrate having the thin oxidation layer.
Patent KR-20000026276-A (KR)
Title: Source head structure of ion injecting apparatus
Inventor: KIM YONG MO
IPC: H01L21/265
Filed: 1998-10-19
Abstract: PURPOSE: A source head structure of an ion injecting apparatus is provided to reduce an arc generation by sufficiently broadening the gap between a gas tube and a terminal of a filament to which a positive voltage is applied. CONSTITUTION: A source head structure of an ion injecting apparatus comprises: a pair of terminals(14a,14b) to which a positive and a negative voltages are applied through filament cables(16a,16b); and a gas tube(12) for supplying a source for generating ions. The gap between the gas tube and the terminal(14a) is 1 centimeter.
Patent KR-20000032249-A (KR)
Title: Data driving device for liquid crystal display of thin film transistor and method of operation thereof
Inventor: PARK SANG HO
IPC: G09G3/36
Filed: 1998-11-13
Abstract: PURPOSE: A data driving device for TFT(thin film transistor) type LCD is to minimize an error between signals for driving neighboring pixels having the same color tone when an image is displayed monochromatically. CONSTITUTION: A data driving device for TFT-LCD comprises a 1st, a 2nd, and a 3rd high voltage output units(30,34,38) for determining a voltage from high voltages, each voltage having a gradation of 2¬x, in accordance with a first digital data having an X bit, and outputting the determined voltage; a 1st, a 2nd, and a 3rd low voltage output units(32,36,40) for determining a voltage from low voltages, each voltage having a gradation of 2¬x, in accordance with a second digital data having an X bit, and outputting the determined voltage; a first selecting unit(20) for outputting an output from the first high or low voltage output unit to a first or second dot as a Red pixel control signal; a second selecting unit(22) for outputting an output from the second high or low voltage output unit to a first or second dot as a Green pixel control signal; a third selecting unit(24) for outputting an output from the third high or low voltage output unit to a first or second dot as a Blue pixel control signal.
Patent KR-20000034698-A (KR)
Title: Device and method for transmitting navigation data of a recording media
Inventor: JANG CHANG HWAN
IPC: H04N21/435
Filed: 1998-11-27
Abstract: PURPOSE: A device and method for transmitting navigation data of a recording media is provided so that a user can make change easily program reproducing operations and program titles by separating navigation data being included as Unpackete and Packete from digital data stream reading out from the recording media, converting the separated navigation data into PES or Private section format of MPEG standard when transmitting digital navigation data stream of MPEG type and transmitting the converted data by using IEEE 1394 interface. CONSTITUTION: A device and method for transmitting navigation data of a recording media includes several steps. A first step separates navigation data stream being read out from the recoding media. A second step converts the separated navigation data stream into PES data format stream. A third step transmits the converted stream format as a predetermined format.
Patent KR-19990066828-A (KR)
Title: 질화물 대 산화물 선택도가 높은 이방성 식각 방법
IPC: H01L21/3065
Filed: 1998-12-02
Abstract: 본 발명은 수소가 많이 포함된 플루오로하이드로카본,  산화제  및 탄소원을  포함하는 식각 기체를 사용하는  기판 상의 질화물층에 대한 이방성 식각 공정에 관한 것이다. 수소가 많이 포함된 플루오로하이드로카본은 바람직하게는 CH 3 F 또는CH 2 F 2 중 하나이고, 탄소원은 바람직하게는 CO 2 또는 CO 중 하나이며, 산화제는 바람직하게는 O 2 이다. 플루오로하이드로카본은 바람직하게는 대략 7 내지 35 부피%의 기체 상태로 존재하며, 산화제는 바람직하게는 대략 1 내지 35 부피%의 기체 상태로존재하며, 탄소원은 바람직하게는 대략 30 내지 92 부피%의 기체 상태로 존재한다.
Patent KR-20000037777-A (KR)
Title: Heavily doped quantum wire and method for manufacturing the same
Inventor: KIM SEONG BOK
IPC: H01L21/00
Filed: 1998-12-02
Abstract: PURPOSE: A method for manufacturing a quantum wire is provided to obtain a quantum wire which has a better physical characteristics than a quantum well device. CONSTITUTION: A photosensitive layer is coated on an N-type semiconductor material, and then the photosensitive layer is patterned. The N-type semiconductor material is etched to form a V-shaped substrate. Then, the photosensitive pattern is removed. The V-shaped substrate is loaded on depositing equipment. A well layer that has a thickness, which is equal to the width of the upper surface of the V-shaped recess, is formed. A P-type semiconductor layer is formed on the above-mentioned structure.
Patent KR-19990062841-A (KR)
IPC: F41B11/56
Filed: 1998-12-07
Abstract: A model gun with automatic bullet supplying mechanism, which comprises a slider (12) provided to be movable along a barrel (3) and a movable member (15) provided between a bullet holding chamber (4) and a pressure receiving portion (30A) to be movable along moving directions of the slider (12). A first gas guiding passage (35) for guiding gas supplied through a gas leading passage (45) from a pressure accumulating chamber (40) to the bullet holding chamber (4) and a second gas guiding passage (36) for guiding the gas supplied through the gas leading passage (45) from the pressure accumulating chamber (40) to the pressure receiving portion (30A) are provided in the movable member (15) to be coupled with each other and, during a period in which the gas leading passage is opened by a movable valve (42), the movable member (15) is operative to cause gas pressure to act on a sham bullet (BB) in the bullet holding chamber (4) so as to move the sham bullet (BB) forward from the bullet holding chamber (4) and, after the sham bullet (BB) has moved forward from the bullet holding chamber (4), to cause gas pressure to pass through the first gas guiding passage (35) and simultaneously to act on the pressure receiving portion (30A) so as to move the pressure receiving portion (30A) back with the slider (12), in accordance with the difference in resistance against gas flow between the first and second gas guiding passages (35, 36), and further to move back together with the slider (12) for making preparations for supplying the bullet holding chamber (4) with a sham bullet (BB) from a magazine (38). <IMAGE>
Patent KR-19990062968-A (KR)
Title: 슬래그 또는 유리와 같은 재료를 발포시키는 방법
IPC: C03B19/08
Filed: 1998-12-10
Abstract: 특히 슬래그 또는 유리와 같은 재료 (2) 를 발포시키는 방법으로서, 상기 재료 (2) 는 팽창제 (3) 에 의해 용융 상태에서 직접 발포되는 방법에 있어서, 용융 재료 (2) 와 팽창제 (3) 를 회전가능하고 그리고/또는 요동가능한 처리용기 (1), 바람직하게는 로터리 튜브형 가마에 공급한다.  팽창제는 표면적으로 분산되고 처리용기 (1) 의 운동에 의해서만 액상 재료 (2) 와 격렬히 서로 혼합된다.   재료 (2) 는 가스의 발생으로 발포되고 이어서 발포 제품 (11) 이 되어 처리용기 (1) 로부터 배출 및 냉각된다.   이와 같이 발포된 제품 (11) 은 매우 미세하게 분포된 밀폐형 세공들을 포함하게 되어 버블링 및 절연 재료로 효과적으로 사용될 수 있다.
Patent KR-20000040665-A (KR)
Title: Bottom yarn rolling unit for sewing machine
Inventor: JANG STEVE
IPC: D05B57/28
Filed: 1998-12-19
Abstract: PURPOSE: A bottom yarn rolling unit for a sewing machine is provided to increase the number of rolling around a rolling unit to give the convenience for replacement of the rolling unit and the thus-obtained efficiency for its sewing operation. CONSTITUTION: A part perspective of a rolling unit is characterized which illustrates the mounted condition of the rolling unit onto a sewing machine, as a representative view of the desired embodiment. The bottom yarn rolling unit is characterized by mounting the following components thereon with aligning them in specific orderly arrangement. In other words, both ends of a main body of the rolling unit(1) are formed with a connection region(14) inserting movably into a central pin(21) in a central zone. Also, the both ends of the main body(1) are each mounted with edge walls(11 and 12). An edge wall of the both must have, however, those less than outer diameter of the other edge wall. A circumferential surface of a compartment wall(13) is equipped with the repeated curved convex region(13a) and concave region(13b) between the both edge walls(11 and 12).
Patent KR-20000043968-A (KR)
Title: Method for utilizing atm signal process of lmds system
Inventor: KIM DONG HYEON
IPC: H04W72/04
Filed: 1998-12-29
Abstract: PURPOSE: A method for utilizing an asynchronous transfer mode(ATM) signal process of a local multipoint distribution services(LMDS) system, is provided, that a head end device executes all service functions except a charge, so that equipment beside of the head end device can be applied to the LMDS system, without changing of internal structures. The method for utilizing an ATM is provided to utilize a real-time signal process as all signal processes is made at the head end device. CONSTITUTION: In a method for utilizing an asynchronous transfer mode(ATM) signal process of a local multipoint distribution services(LMDS) system, a head end device executes a signal process procedure processing and controls user data transmitted through a wireless media from many subscriber device, so the many subscriber devices transmit self data through channels assigned by a signal process procedure. The method contains steps. At the first step, a subscriber device requests the head end device for assigning a channel. The second step is to identify an authentication to the subscriber device. The third step is to assign a channel to a corresponded subscriber device, according to identifying of the authentication of the subscriber device.
Patent KR-20000045220-A (KR)
Title: Improved polybutyleneterephthalate resin composition
Inventor: YEON JIN MO
IPC: C08L67/00
Filed: 1998-12-30
Abstract: PURPOSE: A polybutyleneterephthalate resin composition reinforced with inorganic fillers and crystalline and non-crystalline polymers is provided which has excellent physical properties such as impact strength and tensile strength as well as excellent appearance and gloss. CONSTITUTION: A composition comprises 100% by weight of a resin mixture of (A) a PBT resin, (B) a PET resin, (C) a polycarbonate resin, (D) an impact reinforcing resin, optionally (E) a styrene-acrylonitrile resin, (F) a super high molecular weight SAN resin and 4 to 60% by weight of an inorganic filler. The resin mixture comprises (A) 25 to 93% by weight of a PBT resin, (B) 1 to 40% by weight of a PET resin, (C) 1 to 40% by weight of a polycarbonate resin, (D) 1 to 40% by weight of an impact reinforcing resin, optionally (E) 0 to 40% by weight of a styrene-acrylonitrile resin.
Patent KR-20000046259-A (KR)
Title: Device for attaching glass dam of vehicle
Inventor: YUN SEUNG CHEON
IPC: B60J1/00
Filed: 1998-12-31
Abstract: PURPOSE: A device is provided to attach a glass dam while a windshield glass is rotating by installing a glass supporter and to attach the glass dam and a glass is rotating by installing a dam attaching device. CONSTITUTION: A windshield glass(1) is fixed in an absorber(13) of a glass supporter(10) and rotated by a dam attaching device(20) in order to attach a glass dam(1) to the windshield glass. The absorber is rotated with the windshield glass and a supporting arm(14) supports the edge of the windshield glass so that the windshield glass is safely rotated. A main roller(23) of the dam attaching device roll and compress along the upper face of the glass dam. At the same time, a subsidiary roller(24) rotates along the end of the windshield glass in order to lead the attaching position of the glass dam.
Patent KR-20000046291-A (KR)
Title: Pulse width enlarger of time to digital converter
Inventor: LEE CHEOL HO
IPC: G01R29/00
Filed: 1998-12-31
Abstract: PURPOSE: A pulse width enlarger of a time to digital converter is provided to enhance the resolution by maintaining a voltage difference between a reference voltage and a voltage of a charging/discharging unit constant. CONSTITUTION: A sawtooth waveform generator generates a sawtooth waveform from a gate pulse signal corresponding to a time interval between a trigger pulse and a sampling pulse. A rectangular waveform producing unit(U1) compares the sawtooth waveform with a reference voltage and transforms the sawtooth wave to a rectangular waveform. An associative unit(D1) maintains a voltage difference of the highest voltage of the sawtooth waveform and the reference voltage constant and provides a certain reference to a transition point of the rectangular waveform.
Patent KR-20000046751-A (KR)
Title: Semiconductor device having electrostatic discharge circuit and manufacturing method thereof
Inventor: PARK HONG BAE
IPC: H01L27/06
Filed: 1998-12-31
Abstract: PURPOSE: An electrostatic discharge circuit for protecting SOI(Silicon On Insulator) is to improve a smooth of a device by preventing a stepped cone between an internal circuit unit and an electrostatic discharge circuit unit from generating. CONSTITUTION: A semiconductor substrate(200) has an internal circuit(I2) and an electrostatic discharge circuit(E2). A buried insulating layer(201) is formed at the internal circuit unit of the semiconductor substrate. A first and second semiconductor layers(211,213) are formed on the buried insulating layer to electrically separate the buried insulating layer from the semiconductor substrate. A first and second gates(217,219) are formed on the first and second semiconductor layers, with a gate insulating film(215) interposed therebetween. A first source region(223) and a first drain region(225) are formed on the first gate both sides of the first semiconductor layer, and a second source region(231) and a second drain region(233) are formed on the second gate both sides of the second semiconductor layer.