baber/WOPTO huggingface dataset:
Patent TW-I248749-B (TW)
Title: Method of controlling multiple calls of communication device
Inventor: GAU YI-LUN
IPC: H04M1/72469
Filed: 2004-08-02
Granted: 2006-02-01
Abstract: A method of controlling multiple calls of a communication device is provided. The method includes the following steps: firstly, display P remote parties currently connected with the communication device, wherein the P remote parties form Q calls whose number and status determine a call menu including M options, where M is a positive integer. Next, select one of the remote parties, and select N options applicable to the selected remote party from the M options according to the selected remote party, wherein the N options are defined as N applicable options, where N is a positive integer. After that, display the N applicable options corresponding to the selected remote party. Following that, select one of N applicable options, and execute the selected applicable option corresponding to the selected remote party.
Patent TW-I254553-B (TW)
Title: Communication device with internal antenna system
Inventor: MARTINEZ JUAN M
IPC: H01Q21/28
Filed: 2004-09-10
Granted: 2006-05-01
Abstract: A communication device (100, 500, 800) includes a housing (115) and an antenna system. The housing (115) comprises at least one metallic portion (110) and at least one non-metallic portion (105). The antenna system is for tuning the communication device (100, 500, 800) to radiate at one or more frequencies. The antenna system is located within the non-metallic portion (105) of the housing (115).
Patent TW-I266921-B (TW)
Title: Display device and manufacturing method
Inventor: GOTO YASUMASA
IPC: H01L21/00
Filed: 2004-09-30
Granted: 2006-11-21
Abstract: A display device includes a display area composed of pixels in a matrix. Each pixel has a light-emitting element and a driving element to supply a driving current to the light-emitting element. The driving element includes a thin film transistor with semiconductor layer 21 of a poly-crystalline film. Semiconductor layer 21 is provided with channel region 21 C, and source and drain region 21 S and 21 D disposed on both sides of channel region 21 C. Channel region 21 C connects source region 21 S to drain region 21 D and has at least two conductive regions with different average grain sizes. Characteristics of the driving elements are made substantially uniform so that a display quality of the display device can be improved remarkably.
Patent TW-I285019-B (TW)
Title: Circuit and method for pulse frequency modulation inverter
Inventor: YU ANDRE
IPC: H02M7/42
Filed: 2004-11-10
Granted: 2007-08-01
Abstract: A circuit for pulse width modulation inverter. It is composed of a pulse width modulation power switch driver, a power switch, a transformer unit, a feedback detector unit, and a VCO. The circuit is connected to the power and drives load. The circuit adjusts pulse width of signal that sent by pulse width modulation power switch driver according to the voltage of the power. Accordingly, the circuit can maintain input power received by load at a constant. By doing this, the case of high-input voltage but low-efficient-output can be avoided.
Patent TW-I252596-B (TW)
Title: Light-emitting semiconductor-component with a protection-diode
Inventor: PHILIPPENS MARC
IPC: H01S5/125
Filed: 2004-11-18
Granted: 2006-04-01
Abstract: This invention relates to a light-emitting semiconductor-component, which contains a semiconductor-layer-sequence (2) with a region of p-doped semiconductor-layers (4) and n-doped semiconductor-layers (3), between them a 1st pn-junction (5a, 5b) is formed. The pn-junction (5a, 5b) is in lateral direction divided by an isolating section (6) into a light-emitting section (7) and a protection-diode section (8). In the region of the protection-diode section (8), an n-doped layer (9) is applied at the p-doped region (4), the n-doped layer (9) forms with the p-doped region (4) a 2nd pn-junction (10) which functions as a protection-diode, where the 1st pn-junction (5b) in the protection-diode section (8) has an area larger than the 1st pn-junction (5a) in the light-emitting section (7). The protection-diode section (8) protects the light-emitting semiconductor-component from voltage-pulses due to electrostatic discharge (ESD).
Patent TW-I259440-B (TW)
Title: Electronic keyboard with complete button travel distance
Inventor: LIN JIUN-KUAN
IPC: G10H1/34
Filed: 2004-11-29
Granted: 2006-08-01
Abstract: The present invention relates to an electronic keyboard with complete button travel distance, comprising: a case defining an accommodating space, a plurality of keys installed in the case, a plurality of first and second switches corresponding to the keys, and a processing device. Each first switch has a set of first touching piece and first conducting piece interchangeably disposed at the bottoms of the rear ends of the case and the keys. The first switch is capable of producing a first signal when the first touching piece and the first conducting piece are switched from conducting status to short status. Each second switch has a set of second touching piece and second conducting piece interchangeably disposed at the bottoms of the rear ends of the case and the keys. The second switch is capable of producing a second signal when the second touching piece and the second conducting piece are switched from short status to conducting status. The processing device is capable of receiving the first and the second signal and calculates the time lag so as to control the volume.
Patent TW-I265169-B (TW)
Title: Ethylene-vinyl alcohol copolymer and molded article thereof
Inventor: MATSUI IKKO
IPC: C08K3/38
Filed: 2004-12-21
Granted: 2006-11-01
Abstract: The present invention provides a new ethylene-vinyl alcohol copolymer, which has improved drawing properties and gives a molded article having excellent gas barrier properties, appearance and strength, and a molded article thereof. Specifically, the present invention provides an ethylene-vinyl alcohol copolymer comprising the structural unit of formula (1), (wherein X is any bond excluding an ether bond, each of R1 to R4 are independently any substituent, n is 0 or 1), and a molded article thereof.
Patent TW-I286343-B (TW)
Title: Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
Inventor: CONNELLY DANIEL J
IPC: H01L21/02
Filed: 2004-12-31
Granted: 2007-09-01
Abstract: An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently thick to depin a Fermi level of the semiconductor, yet sufficiently thin to provide the junction with a specific contact resistance of less than or equal to approximately 1000 Omega-mum<2>, and in some cases a minimum specific contact resistance.
Patent TW-I246489-B (TW)
Title: Arrangement structure of speed-change cable
Inventor: MATSUMOTO SHINYA
IPC: F16H61/36
Filed: 2005-01-10
Granted: 2006-01-01
Abstract: To improve the operability by a speed-change cable (C) and reduction of the cable by selecting adequate arrangement structure of the speed-change cable (C) from a transmission case (20) to an operating element of a handle on the front portion of a vehicle body. An arrangement structure of a speed-change cable (C) is such that the speed-change cable (C) is attached at one end to an arm portion (62B) of a derailleur (60) and the speed-change cable (C) is guided from the mounting portion through an outer cable mounting hole (61e) of a derailleur shaft (61) to a through-hole (20L1) opening at the upper front portion of a transmission case (20), is extended from the through-hole (20L1) outside the case (20), and is extended along the front frame of the vehicle body substantially straightly, and the extended end is attached to a cable operation mechanism at the handle on the front portion of the vehicle body.
Patent TW-I254373-B (TW)
Title: Use of C2F6 gas to gain vertical profile in high dosage implanted poly film
Inventor: LIU KUO-CHIN
IPC: B44C1/22
Filed: 2005-03-28
Granted: 2006-05-01
Abstract: A method of etching a polysilicon layer comprising the following steps. A polysilicon layer is formed over a structure and the polysilicon layer is etched using at least a C2F6 etching process to form an etched polysilicon layer having a vertical profile.
Patent TW-I251511-B (TW)
Title: Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
Inventor: RAVKIN MICHAEL
IPC: B08B3/00
Filed: 2005-03-31
Granted: 2006-03-21
Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
Patent TW-I262809-B (TW)
Title: Golf club head having lower center of gravity
Inventor: HUANG CHUN-YUNG
IPC: A63B53/04
Filed: 2005-05-31
Granted: 2006-10-01
Abstract: A golf club head comprises a body portion and a striking plate portion. The body portion has a connecting portion at its front side for connecting the striking plate portion which has a metal matrix and at least one light-weight reinforcing filler. The metal matrix constitutes the basic frame of the striking plate portion, and forms with a recession for combining with the light-weight reinforcing filler. The weight of the striking plate portion can be reduced by using light-weight reinforcing filler so that a center of gravity of the golf club head can be relatively adjusted backward and downward.
Patent TW-I263601-B (TW)
Title: System and method of providing information of bad communication signal of car-sued wireless communication module
Inventor: CHEN GUO-RUNG
IPC: B60R25/33
Filed: 2005-07-21
Granted: 2006-10-11
Abstract: The present invention relates to system and method of providing information of bad communication signal of car-sued wireless communication module. When electric door switch is turned off and anti-thief main unit is set to anti-thief mode, wireless communication module is turned on by vehicle computer to detect the reception quality and obtain a reception quality result. If the reception quality is not higher than pre-determined reception value, when the electric door is turned on again a voice device will remind the driver that the communication quality is bad at the current parking position, to prevent that signal in anti-thief mode can not be sent to driver in time by wireless communication module and car is stolen without acknowledging. The position is set to be bad signal reception position by the vehicle computer and stored in electric map so that the vehicle computer can remind driver with voice device in advance when driving through the bad signal reception position again.
Patent TW-I411790-B (TW)
Title: System and method of sensing actuation and release voltages of an interferometric modulator
Inventor: CHUI CLARENCE
IPC: G09G5/00
Filed: 2005-08-16
Granted: 2013-10-11
Abstract: A method for sensing the actuation and/or release voltages of a microelectromechanical device include applying a varying voltage to the device and sensing its state and different voltage levels. In one embodiment, the device is part of a system comprising an array of interferometric modulators suitable for a display. The method can be used to compensate for temperature dependent changes in display pixel characteristics.
Patent TW-I272140-B (TW)
Title: Forming process of rotating necking with taper curved tube and forming apparatus thereof
Inventor: LIANG CHIN-WANG
Filed: 2005-08-19
Granted: 2007-02-01
Abstract: Forming process of rotating necking with taper curved tube and its forming apparatus are disclosed. The goal of the invention is to put the embryonic tube to be processed on the spindle shaft set to perform the rolling process, wherein the middle length of the spindle shaft set has a necking length. A plurality of rotating roller sets are used to implement rotating rolling for the embryonic tube from different directions simultaneously. The moving path and the feed travel of the rotating roller set can be set based on curve patterns and thickness demand. The shape of the spindle shaft set is set based on taper curve. When the rotating roller set completes the predetermined rotating rolling procedure, the embryonic tube can be closely attached to the spindle shaft set to form an embryonic tube with a necking portion as the semi-finished products. The embryonic tube as the semi-finished products is cut into two parts from the necking portion so as to form two embryonic tubes with convergence curves.
Patent TW-I268611-B (TW)
Title: Ultra high voltage MOS transistor device and method of making the same
Inventor: KAO CHING-HUNG
IPC: H01L29/772
Filed: 2005-12-06
Granted: 2006-12-11
Abstract: An ultra high voltage MOS transistor device includes a gate laterally extending to a first dielectric layer having a void under the gate edge, and a second dielectric layer covering the gate and the first dielectric layer while retaining the void. The first dielectric layer may be in a form of a field oxide layer or a shallow trench isolation, and a thickness increasing dielectric layer may be further stacked on the field oxide layer or the shallow trench isolation. The thickness increasing dielectric layer may comprise a low K material or the shallow trench isolation may be filled with porous oxide material, and then the first dielectric layer may not have the void. In the ultra high voltage MOS transistor device, the vertical electric field occurring nearby the gate edge is relatively low.
Patent TW-I410612-B (TW)
Title: Method and apparatus for sensing liquid level using baseline characteristic
Inventor: PELOVITZ ROBERT
IPC: G01F23/24
Filed: 2006-06-26
Granted: 2013-10-01
Abstract: A liquid level sensing arrangement using a probe uses a baseline probe circuit characteristic, e.g., a circuit resistance or voltage, that is measured when the probe is out of contact with the liquid in the tank. The baseline characteristic may be used to determine a liquid level in the tank, e.g., a determination whether the liquid level is below or at/above the probe. In one embodiment, the baseline characteristic may be compared to a circuit characteristic that is measured as the tank is being filled. A difference between the baseline characteristic and the other circuit characteristic may be used to determine whether or not the probe is in contact with the liquid.
Patent TW-I327746-B (TW)
Title: Method of forming pitch multipled contacts
Inventor: TRAN LUAN C
IPC: H01L21/28
Filed: 2006-08-30
Granted: 2010-07-21
Abstract: Methods of forming electrically conductive and/or semiconductive features for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. The features can have a reduced pitch in one direction and a wider pitch in another direction. Conventional photo-lithography steps can be used in combination with pitch-reduction techniques to form elongate, pitch-reduced features such as bit-line contacts, for example.
Patent TW-I389817-B (TW)
Title: Bicycle crank arm, intermediate product and method for manufacturing such a crank arm
Inventor: CIAVATTA GABRIELE
IPC: G05G1/30
Filed: 2007-02-06
Granted: 2013-03-21
Abstract: A bicycle pedal crank (1) is described, comprising an elongated body (2) extending along a longitudinal axis X-X and having a first end portion (5) comprising a first seat (38) for coupling with a bottom bracket of the bicycle, a second end portion (10) comprising a second seat (39) for coupling with a pedal and an intermediate portion (15) extending between said first end portion (5) and said second end portion (10) and comprising an inner portion (20) substantially without structural strength and a first reinforcement structure. In accordance with the invention, the first reinforcement structure comprises a tubular structure (35) arranged around said inner portion (20) and extending longitudinally for a part not longer than the longitudinal extension of said intermediate portion (15). Such a tubular structure (35), advantageously, ensures uniform structural capabilities around the portion substantially without structural capability. The extension of the tubular element is limited to just the intermediate portion (15) of the pedal crank, that is without involving the end portions (5,10) and the respective coupling seats (38,39), allows the pedal crank (1) to be manufactured in a simple and quick way in a completely automated manner, for example, using a filling material moulded under high pressure. An intermediate product and a method for manufacturing the aforementioned pedal crank are also described.
Patent TW-I422705-B (TW)
Title: Gas supply apparatus
Inventor: NORTH PHILLIP
IPC: C23C16/455
Filed: 2007-03-20
Granted: 2014-01-11
Abstract: Apparatus is described for supplying and measuring a purge gas flow to a pumping arrangement, the apparatus comprising a manifold (104) having a gas inlet (106) and a plurality of gas outlets (110) each for supplying gas to a respective port of the pumping arrangement, and a flow selector (120) between the inlet and the outlets, the flow selector having a plurality of spaced apertures (130) of various sizes and being moveable relative to the manifold from one position in which a first set of the apertures is aligned with the inlet and the outlets to another position in which a second set of the apertures is aligned with the inlet and the outlets to vary the flow rate of gas into and from the flow selector, and enable the gas flow rate to be measured across the aperture aligned with the inlet.
Patent TW-I411146-B (TW)
Title: Diamond-like carbon electronic devices and methods of manufacture
IPC: H01L51/00
Filed: 2007-08-14
Granted: 2013-10-01
Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer can be coupled adjacent and between the diamond-like carbon cathode and an anode. The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.
Patent TW-I396636-B (TW)
Inventor: KENJI SATO
IPC: B60L15/02
Filed: 2007-09-21
Granted: 2013-05-21
Abstract: Provided is a vehicle travel control system for improving a ride quality in an electric vehicle in a power system switching zone. When an ATC device mounted on a vehicle has detected that the vehicle had entered a section switching zone, the following process is performed during a period from the moment when the vehicle has entered the section switching zone and to the moment when the time of the power supply stop for the section switching zone has elapsed. That is, a powering torque generated by a drive device is reduced according to a predetermined lowering pattern and the powering torque generated by the drive device is increased according to a predetermined increase pattern when a predetermined power supply resumption time has elapsed after the power supply is stopped.
Patent TW-I357604-B (TW)
Title: Non-volatile storage system and method for operati
Inventor: DONG YINGDA
IPC: G11C16/06
Filed: 2007-12-12
Granted: 2012-02-01
Abstract: Program disturb is reduced in non-volatile storage by boosting unselected NAND strings in an array so that a source side channel, on a source side of a selected word line, is boosted before a drain side channel, on a drain side of the selected word line. In one approach, a first boost mode is used when the selected word line is a lower or intermediate word line. In the first boost mode, boosting of the source and drain side channels is initiated concurrently. A second boost mode is used when the selected word line is a higher word line. In the second boost mode, boosting of the source side channel occurs early relative to the boosting of the drain side channel. Either boost mode include an isolation voltage which tends to isolate the source and drain side channels from one another.
Patent TW-I416259-B (TW)
Title: Chemically amplified negative resist composition
Inventor: TAKEDA TAKANOBU
IPC: C08F32/08
Filed: 2008-03-28
Granted: 2013-11-21
Abstract: A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 µm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
Patent TW-I405346-B (TW)
Inventor: GOYA SANEYUKI
IPC: H01L31/077
Filed: 2009-01-07
Granted: 2013-08-11
Abstract: A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%. Also, a photovoltaic device 100 in which the size of the surface of the substrate 1 on which the photovoltaic layer 3 is formed is at least 1 m square, and in which the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio that is not less than 5 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 10%.