baber/WOPTO huggingface dataset:
Patent TW-389746-B (TW)
Title: Method for making standing incense
Inventor: SHIE JEN-HUEI
IPC: C06F1/00
Filed: 1998-01-16
Granted: 2000-05-11
Abstract: A method for making a standing incense comprises mixing a carbon powder with a binding powder at an appropriate proportion to prepare a carbon binding powder; soaking the leg section of an incense stick with water and adhering the wet section of the stick with an appropriate amount of the binding powder; dipping it in water and adhering it with carbon binding powder to form a standing incense containing carbon material; dipping it in water again and adhering a pigment binding powder on the outer layer of standing incense to form a colored standing incense.  The standing incense has a desired color without the need of a dyeing process and meets the environmental demands.
Patent TW-434222-B (TW)
Title: Process to continuously prepare an aqueous mixture of ε-caprolactam and ε-caprolactam precursors
Inventor: HERKES FRANK EDWARD
IPC: C07B61/00
Filed: 1998-02-16
Granted: 2001-05-16
Abstract: This continuous process for preparing an aqueous mixture of ε-caprolactam and 6-aminocaproic acid and/or 6-aminocaproamide which involves, as the reductive amination step, continuously contacting 5-formylvaleric acid or an alkyl 5-formylvalerate in water as solvent with hydrogen and an excess of ammonia in the presence of a ruthenium on carrier, as a catalyst, wherein the carrier is at least one of titanium oxide or zirconium oxide. The aqueous mixture can be used to prepare ε-caprolactam.
Patent TW-411639-B (TW)
Title: Electrical connector
Inventor: YAMADA SHOJI
IPC: H01R12/16
Filed: 1998-03-02
Granted: 2000-11-11
Abstract: An electrical connector having a housing with electrical part-receiving slots at both sides of the housing, to each of which each of two pieces of electrical parts would be inserted so that the both faces of the electrical parts would be reverse to each other. On the inner walls of the electrical part-receiving slots of the housing, retaining grooves are formed in a predetermined distance, and each retaining groove is provided with a common terminal which is connected to a wiring common to the two pieces of the electrical parts, a first independent terminal and a second independent terminal which are connected to different wirings for each electrical part. According to this electrical connector, not only two pieces of electrical parts can be inserted, but also wirings common to the electrical parts can be connected all together to a packaging board and the height of installation on the packaging board can be suppressed low.
Patent TW-358780-B (TW)
Title: Fuel tank
Inventor: KOBAYASHI KAZUYUKI
IPC: B60K15/073
Filed: 1998-03-19
Granted: 1999-05-21
Abstract: A fuel tank, having: upper frame having the fuel inlet up and the lower frame attached to the flange, said upper frame, including the external cavity with the fuel inlet perimeter open in one direction, and the water ditch disposed along the exterior of said flange, with the notch in connection with the cavity.
Patent TW-353057-B (TW)
Title: Container for storage disk
Inventor: SHINDOU HIROKAZU
IPC: B65D85/86
Filed: 1998-03-24
Granted: 1999-02-21
Abstract: A container for storage disk, which comprises: a disk holder for holding a plurality of storage disks at a predetermined interval in a row so that their axial lines are substantially overlapping each other; and a case for housing the disk holder; which is characterized in that the case houses the disk holder so as to form an effective gas impermeable seal.
Patent TW-434329-B (TW)
Title: Synthesis of onium hydroxides from onium salts
Inventor: SHARIFIAN HOSSEIN
IPC: C07C211/63
Filed: 1998-04-01
Granted: 2001-05-16
Abstract: The present invention provides a process for preparing onium hydroxide from a corresponding onium salt and for purifying onium hydroxide including providing an electrochemical cell containing a cathode, an anode, a divider and a bipolar membrane, the bipolar membrane having an anion selective side facing the anode and a cation selective side facing the cathode, wherein the divider is positioned between the cathode and the bipolar membrane, and the bipolar membrane is positioned between the divider and the anode, thereby defining a feed compartment between the divider and the bipolar membrane, a recovery compartment between the divider and the cathode, and a water compartment between the bipolar membrane and the anode; charging a solution containing at least one of the onium salt and the onium hydroxide to be purified to the feed compartment; charging a liquid electrolyte to the other compartments; passing a current through the electrochemical cell to produce the onium hydroxide in the recovery compartment; and recovering the onium hydroxide from the recovery compartment.
Patent TW-423204-B (TW)
Title: Driver of cold cathode fluorescent lamp
Inventor: HONBO NOBUAKI
IPC: H05B41/282
Filed: 1998-05-06
Granted: 2001-02-21
Abstract: A driver of a cold cathod fluorescent lamp (CCFL) comprising: a piezoelectric transformer for boosting an A.C. voltage input to a primary terminal of said piezoelectric transformer by a piezoelectric effect thereof and supplying the boosted voltage to said CCFL connected to a secondary terminal of said piezoelectric transformer; drive means for converting a D.C. voltage from a power source into an A.C. voltage and supplying the A.C. voltage to said primary terminal of said piezoelectric transformer; first control means for detecting a load current flowing through said CCFL and controlling a frequency of said drive circuit such that the load current becomes a predetermined value; and second control means for controlling a value of current supplied from said power source to said drive means, wherein said second control means comprises current detector means for detecting a value of current supplied to said drive means and means for generating, when the detection value of said current detector means exceeds the predetermined value, a pulse width modulation signal having a duty cycle ratio corresponding to a difference between the detection value and the predetermined value and on-off controlling said drive means periodically according to the pulse width modulation signal.
Patent TW-375820-B (TW)
Title: Method for embedded DRAM metalized planarization
Inventor: PENG JEA-MIN
IPC: H01L23/522
Filed: 1998-06-04
Granted: 1999-12-01
Abstract: This invention discloses a method for metalized planarization of embedded DRAM (dynamic random access memory). A substrate is defined having a memory region and a logic region. Then, form a first Inter-layer dielectric on the substrate which has height drop between the memory area and the logic area. Then, form a first metal layer in the logic region, which electrically couples at least with one source/drain in the logic region. Then, form a second planarized inter-layer dielectric in the logic region, and make it so that it is of the same height as the surface of first inter-layer dielectric in the memory region. Form a second metal layer in the memory region which acts as a bit line in DRAM, electrically couples with at least one source/drain of the memory region. Also, the first metal layer in the logic region is connected with the second metal layer in the logic element area through at least one via, in which both first metal layer and the second metal layer have side connecting patterns.
Patent TW-402591-B (TW)
Title: Monocyclic benzamides of 3- or 4-substituted 4-(aminomethyl)-piperidine derivatives
Inventor: BOSMANS JEAN-PAUL RENE MARIE A
IPC: A61P1/14
Filed: 1998-06-12
Granted: 2000-08-21
Abstract: The present invention of compounds of formula (I) a stereochemically isomeric form thereof, or a phamaceutically acceptable acid addition salt thereof, wherein each Alk is C1-12alkanediayl; and R6 is hydrogen, cyano, C1-6alkylsulfonylamino, C3-6cycloalkyl, or Het<1>; R7 is C1-6alkyl, or hydroxyC1-6alkyl; X is O; R9 is C1-6alkyl, or C1-6alkyloxy; Y is a direct bond; R11 and R12 each independently are C1-6alkyl, or R11 and R12 combined with the nitrogen atom bearing R11 and R12 may form a pyrrolidinyl ring; and Het<1> is tetrahydrofuran, a dioxolane, a dioxolane substituted with C1-6alkyl, tetrahydropyran, or pyridazinone radical substituted with one or two substituents each independently selected form hydroxy, halo or C1-6alkyl; Het<1> can also be a radical of formula(c-1) (c-3) (c-4) R13 is C1-4alkyl; and wherein -OR<4> radical is situated at the 3- or 4-position of the central piperidine moiety. Processes for preparing said products, formulations comprising said products and their use as a midicine are disclosed, in particular for treating conditions which are related to impairment of gastric emptying.
Patent TW-381070-B (TW)
Title: Process for the amination of mononuclear, aromatic compounds and polynuclear compounds containing at least one aromatic ring in the presence of a palladium complex catalyst
Inventor: BOCHE GERNOT PROF DR
IPC: C07C225/32
Filed: 1998-07-02
Granted: 2000-02-01
Abstract: The present invention provides a novel process for the amination of mononuclear, aromatic compounds and polynuclear compounds containing at least one aromatic ring, which process permits simple isolation of the aminated mononuclear, aromatic compound or of the aminated, polynuclear compound containing at last one aromatic ring from the reaction mixture and recovery of the catalyst system used. This process comprises the reaction of the mononuclear, aromatic compound or of the polynuclear compound containing at least one aromatic ring with primary or secondary amines in the presence of water, of a base and of a palladium complex catalyst which contains organic, water-soluble phosphine ligands.
Patent TW-I224604-B (TW)
Title: Blowing agent powder and process for producing the same
Inventor: MAEKAWA TSUKASA
IPC: B01J2/30
Filed: 1998-07-10
Granted: 2004-12-01
Abstract: A powder comprising a blowing agent powder core which is coated with at least one oil-like substance on its surface, and a process for producing a powder comprising a blowing agent powder core which is coated with at least one oil-like substance on its surface, comprising the following steps (a) and (b): (a) adding at least one oil-like substance in the form of a mist to a blowing agent powder; and (b) mixing the oil-like substance with the blowing agent powder under such mixing conditions that the blowing agent powder is less susceptible to pulverization.
Patent TW-514681-B (TW)
Title: Method of analyzing the contaminants of a semiconductor device fabrication facility
Inventor: HUR YONG-WOO
IPC: C23G1/02
Filed: 1998-08-06
Granted: 2002-12-21
Abstract: A method of analyzing the contaminants of a semiconductor device fabrication facility comprising the steps of: (a) mixing a sample taken from the semiconductor device fabrication facility, and a chemical for dissolving the sample having sulfuric acid, hydrogen fluoride, and nitric acid mixed at same volume ratio respectively, and dissolving the mixture at a high temperature; (b) cooling the dissolved mixture at a high temperature by the (a) step; (c) supplying deionized water to the mixture for dilution; and (d) analyzing the diluted mixture of the (c) step.
Patent TW-409158-B (TW)
Title: Process for treating cellulose fibres
Inventor: AESCHLIMANN PETER
IPC: D06M13/325
Filed: 1998-08-24
Granted: 2000-10-21
Abstract: This invention relates to a process for treating Lyocell cellulose fibres, which comprises treating the Lyocell cellulose fibre with at least one compound of formula wherein X is -NR- or -S-, A is an aliphatic radical containing 1 to 18 carbon atoms which is free of sulfo groups, or -X-A is hydroxy, and R is hydrogen or, independently of A, has the meaning of A.
Patent TW-544457-B (TW)
Title: Low dielectric constant materials with improved thermal and mechanical properties
Inventor: LEE CHUNG J
IPC: C07C47/55
Filed: 1998-10-23
Granted: 2003-08-01
Abstract: New starting materials and methods are used to make materials with low dielectric constant through the processes of transport polymerization or chemical vapor deposition. The starting materials and precursors are designed to provide polymers with combined low dielectric constant, high thermal stability and high mechanical strength. The low dielectric constant products are useful as IMD and ILD for future IC fabrication. These polymers are used for the manufacture of thin films with low dielectric constant, high thermal stability, and mechanical strength sufficiently high to withstand reflow, annealing, planarization, and polishing for the manufacture of integrated circuits, electro-optical devices, and micromechanical devices.
Patent TW-476697-B (TW)
Title: Fiber-reinforced resin molded article and method of manufacturing the same
Inventor: NOMURA MANABU
IPC: B29C44/58
Filed: 1998-11-20
Granted: 2002-02-21
Abstract: A fiber-reinforced lightweight resin molded article is a lightweight fiber reinforced molded article with pores which has a portion having a porosity rate lower than those of other general portions. The present invention also provides an efficient method for manufacturing the fiber-reinforced lightweight resin molded article. The method employs retractable mobile mold with respect to mold cavity and produces protruding part in the mold cavity for the concave portion of the molded article along the direction of the molded article. The fiber-containing molten thermoplastic resin is injected into the mold and the mobile mold retreats along the expending direction of the mold cavity volume. The molded article has concave portion along its thickness direction.
Patent TW-434746-B (TW)
Title: Semiconductor device
Inventor: TOTTORI ISAO
IPC: H01L21/768
Filed: 1998-11-26
Granted: 2001-05-16
Abstract: In accordance with the present invention, a re-flowed and polished BPSG film 9 is formed on a silicon oxide film 8 covering a gate electrode portion 5. A second interconnection layer 12 is formed on the BPSG film 9. To cover the second interconnection layer 12, a silicon oxide film 13 having a thickness of at least the substantial thickness of the second interconnection layer 12 is formed on a silicon oxide film 10. Thus, the planarity of the underlayer for the interconnection layer is ensured and displacement of the interconnection layer is suppressed. Accordingly, a semiconductor device having a high degree of integration is obtained.
Patent TW-507080-B (TW)
Title: Burn in technique for chips containing different types of IC circuitry
Inventor: GROSCH DAVID ALAN
IPC: G01R31/28
Filed: 1999-02-10
Granted: 2002-10-21
Abstract: An improved technique for testing semi-conductor chips having different types of circuits thereof is provided. The burn-in test includes providing test engines and/or externally applied patterns for each of the different types of circuits, stressing at high temperature and increased voltage, the semi-conductor containing both types of circuits, and running a sequence of patterns on each of said types of circuits simultaneously by the use of the engines for at least one of the types of circuits.
Patent TW-I225079-B (TW)
Title: Sulfur containing atomic group introduced porous article for use of battery separator, and process for introducing a sulfur containing atomic group onto outer-inner surfaces of porous article
Inventor: TAKEUCHI YASUSHI
IPC: H01M50/489
Filed: 1999-02-23
Granted: 2004-12-11
Abstract: A porous article wherein a sulfur containing atomic group is introduced onto at least a part of outer-inner surfaces of the article, a ratio (S/C) of the number of sulfur atoms (S) to the number of carbon atoms (C) on the surface onto which the sulfur containing atomic group is introduced is 7x10<-4> or more, a ratio (O/C) of the number of oxygen atoms (O) to the number of carbon atoms (C) on the surface onto which the sulfur containing atomic group is introduced is 0.2 or more, and the ratio (S/C) and the ratio (O/C) are determined by means of an X-ray photoelectron spectrophotometer is disclosed.
Patent TW-463187-B (TW)
Title: Electromagnetic device
Inventor: LEIJON MATS
IPC: H01F29/14
Filed: 1999-03-24
Granted: 2001-11-11
Abstract: An electromagnetic device comprises at least one magnetic circuit (1) and at least one electric circuit (2, 3) comprising at least one winding (4, 5). The magnetic and electric circuits are inductively coupled to each other. The device comprises a control arrangement (7) to control operation of the device. This control arrangement is adapted to control frequency, amplitude and/or phase as concerns electric power to/from the device by the control arrangement comprising means (9) controlling the magnetic flux in the magnetic circuit.
Patent TW-429321-B (TW)
Title: Method for nondestructive measurement of dopant concentrations and profiles in the drift region of certain semiconductor devices
Inventor: BAUMGART HELMUT
IPC: G01N21/00
Filed: 1999-03-24
Granted: 2001-04-11
Abstract: A method is provided for determining dopant impurity concentration ND in certain semiconductor devices, such as high voltage lateral double diffused metal oxide semiconductor (HV LDMOS) transistors. Such a device is scanned along its length by a beam of radiant energy (e.g., a laser beam focused through a microscope onto the device) while the device is reverse biased by a voltage V. A resulting beam induced current signal measures a depletion width W, for a given bias voltage V, the widths W increasing with increasing bias voltages V. From a series of respective voltages V and widths W a profile of corresponding dopant concentrations ND is determined using a suitable mathematical algorithm.
Patent TW-407219-B (TW)
Title: Method of making ferrule connectors for optical fibers
Inventor: AHRENS ROERT GEORGE
IPC: G02B6/36
Filed: 1999-06-25
Granted: 2000-10-01
Abstract: A method for making optical fiber ferrules with bevels and/or notches thereon is disclosed. The bevels and/or notches are formed on the optical fiber ferrule with a laser. Forming bevels and/or notches with the laser permits the manufacture of optical fiber ferrules using materials less expensive than ceramic such as glass.
Patent TW-419874-B (TW)
Title: Semiconductor light emitting device and method for producing the same
Inventor: NAKAMURA SHINJI
IPC: H01S5/323
Filed: 1999-09-09
Granted: 2001-01-21
Abstract: A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a <1, 1, -2, 0> direction.
Patent TW-491976-B (TW)
Title: Low jitter fractional divider with low circuit speed constraint
Inventor: LIN WEN-CHANG
IPC: H03K23/68
Filed: 1999-10-07
Granted: 2002-06-21
Abstract: The present invention provides a low jitter fractional divider with low circuit speed constraint, which lowers the frequency of a high frequency clock signal to perform a fraction division in the condition of low frequency. A compensation circuit, which has an adjust buffer and a down-counter, is provided for adjusting the output clock signal of the fractional divider to have a jitter substantially equal to the jitter occurred in high frequency, such that a low jitter can be achieved without being limited by the circuit speed.
Patent TW-512147-B (TW)
Title: Process for the preparation of microencapsulated spherical polymers
Inventor: HALLE OLAF
IPC: C08F2/18
Filed: 1999-10-11
Granted: 2002-12-01
Abstract: The invention relates to a process for the preparation of microencapsulated spherical polymers by polymerization of a mixture of microencapsulated initiator-containing droplets of hydrophobic monomer which are suspended in an aqueous phase and a hydrophilic monomer added to the aqueous phase.
Patent TW-448248-B (TW)
Title: Set of epitaxial silicon wafers assembled in a wafer casette, boat or other wafer carrier
Inventor: MULE STAGNO LUCIANO
IPC: H01L21/208
Filed: 1999-11-22
Granted: 2001-08-01
Abstract: The present invention is directed to a set of epitaxial silicon wafers assembled in a wafer cassette, boat or other wafer carrier. Each wafer comprises a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated silicon self-interstitial defects on the substrate surface upon which the epitaxial layer is deposited.
Patent TW-393563-B (TW)
Title: Method of measuring film-layer's thickness in the chemical mechanical polishing
Inventor: WANG KE-YAU
IPC: G01B11/06
Filed: 1999-10-21
Granted: 2000-06-11
Abstract: This invention measures film-layer's thickness on a wafer surface in a chemical mechanical polishing (CMP) process. The wafer's upper surface is pressed on the polishing pad to polish the film-layer on wafer surface. At least two separate light beams illuminate the wafer surface's film-layer and produce at least two reflective beams with different wavelengths. Then, at least two reflective beams are measured to separately produce at least two sets of sine wave signals. By comparing at least two sets of sine wave signals, the thickness of the film-layer can be determined.
Patent TW-459006-B (TW)
Title: Resin film excellent in emboss processability, emboss processing method for the said resin film and the decorative metal sheet coated with the said resin film
Inventor: IWASHITA HIROYUKI
IPC: B29C43/22
Filed: 1999-10-30
Granted: 2001-10-11
Abstract: Disclosed is to provide a resin film that can be used in the construction materials such as unit bath, the resin film having excellent emboss processability superior to that of conventional flexible polyvinyl chloride film, and a decorative metal sheet coated with said resin film which having high grade feeling in appearance. By using resin film of TMA relation value below 10 as raw material being coated onto a decorative metal sheet, then subjected to rolling treating by using a carving roll, on the basis of using Tss (softening starting temperature measured by TMA), Tse (softening ending temperature measured by TMA) and Tmp measured by DSC, the surface temperature Tr of chilled roll that contacted with the resin film is set in the range of Tss-10≤Tr≤Tse(DEG C) and Tr<Tmp(DEG C), subjected to emboss processing, an embossing surface of high grade feeling which is superior to that of conventional polyvinyl chloride resin can be obtained. The TMA relation value (DEG C) is equal to Tse-Tss, wherein the Tss(DEG C) is the softening starting temperature measured by using TMA, and the Tse(DEG C) is the softening ending temperature measured by using TMA.
Patent TW-462126-B (TW)
Title: Semiconductor integrated circuit apparatus and its manufacturing method
Inventor: OGISHIMA JUNJI
IPC: H01L21/768
Filed: 1999-11-16
Granted: 2001-11-01
Abstract: The present invention relates to the semiconductor integrated circuit apparatus and its manufacturing method, in which the semiconductor integrated circuit apparatus is composed of MISFET and capacitor devices. In order to improve the refresh characteristic of memory cell, the conductivity type of low impedance polysilicon film of the gate electrode 5g for the n-channel MISFETQ, which is used for selecting the memory cell so as to composite the memory cells, is made to form p+ type.