baber/WOPTO huggingface dataset:
Patent JP-H10310052-A (JP)
Title: Fall preventive device
Inventor: TAKAO YOSHIHIRO
IPC: B61D17/20
Filed: 1997-05-09
Abstract: PROBLEM TO BE SOLVED: To surely prevent falling of a passenger from a platform to a coupling part space in simple and inexpensive constitution. SOLUTION: A bracket 3 is fixed on a wainscot panel 35 close to a coupling part opening in a vehicle 31. One end 4a of a plate spring 4 in a U form opened toward a side wall 36 of the vehicle 31 is fixed to the bracket 3. A push plate 5 is fixed to the other end 4b of the plate spring 4, and an outer bellows 7 is provided between the push plate 5 and the wainscot panel 35. A center part 7b of this outer bellows 7 is supported by an outer bellows support 6 pivotally supported on the bracket 3.
Patent JP-S5453719-A (JP)
Title: Engine storm preventive unit of fuel injection pump
Inventor: YANAGAWA HAJIME
IPC: F02D1/06
Filed: 1977-10-06
Abstract: PURPOSE: To operate a fuel injection pump after releasing deceleration by locking a governor at rapid deceleration, which is included in a diesel engine.  
     CONSTITUTION: A pneumatic governor 6 including a negative pressure chamber 7 divided by a diaphgram 8 is connected with a control rack 12 of a fuel injection pump 11 and properly corrects the rack 12 according to the operation conditions by the negative pressure of the suction pipe 1. The negative pressure chamber 7 is connected with a venturi 2 of the suction pipe 1 by a pipe line 5 which can be communicated with atmosphere by a solenoid valve 13 provided on the pipe 14. At rapid deceleration of an engine, the solenoid valve 13 is released to lead atmosphere into the negative pressure chamber 7 so that the governor is locked 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-S61276569-A (JP)
Inventor: IJIMA TADASHI
IPC: A61N2/08
Filed: 1985-05-31
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H11329212-A (JP)
Title: Electric field electron emitting device
Inventor: KONUMA KAZUO
IPC: H01J1/304
Filed: 1999-04-27
Abstract: PROBLEM TO BE SOLVED: To provide an electric field electron emitting device which is able to restrain an electron emission distribution axial direction, and moreover restrain an abnormal plunging of electrons emitted from a cathode electrode into an adjacent gate electrode. SOLUTION: An electric field electron emitting device is provided with a gate electrode and a cathode electrode 1 arranged in a hole formed in the gate electrode. The device is further provided with the gate electrode adjacent to the hole, a gate electrode slit 10 which coaxially surrounds the gate electrode adjacent to the hole, and a gate main line electrode which is disposed at the outside of the gate electrode slit 10 and is electrically connected through the gate electrode adjacent to the hole and a plurality of gate branching lines.
Patent JP-H02297934-A (JP)
Title: Manufacture of semiconductor device
Inventor: OKAZAKI SHOHEI
IPC: H01L21/312
Filed: 1989-05-11
Abstract: PURPOSE:To prevent a high contact resistance between a bonding wire and an Al bonding pad by forming a polyimide film on a protective film, and etching a silicon nitride film or the like with the resin film patterned in a predetermined shape as a mask. CONSTITUTION:A protective film 12 such as a silicon nitride film, an oxide film, etc., is formed on a semiconductor device formed on the surface of a silicon board 11. Then, the film 12 is coated with liquidlike polyimide resin by a spinner, and baked to form a thermally cured polyimide resin 13. The resin 13 on an Al bonding pad 14 is patterned in a predetermined shape. With the resin 13 patterned in the predetermined shape as a mask the film 12 such as a silicon nitride film, an oxide film, etc., is dry checked. Thus, since the bonding pad is not brought into contact with the polyimide resin, a high contact resistance between the bonding wire and the pad can be prevented at the time of bonding.
Patent JP-S5745244-A (JP)
Title: Forming method for phosphorous silicate glass film
Inventor: SHIOTANI YOSHIMI
IPC: C23C16/44
Filed: 1980-08-29
Abstract: PURPOSE:To improve wetproof property, to decrease the generation of a thermal crack and to ameliorate reliability by using a growth gas, the rate of phosphine (PH3) therein is extremely low, in a chemical gaseous phase growth method for phosphorous silicate glass. CONSTITUTION:Oxygen is supplied from the gas introducing nozzles 4, 4' of a decompression CVD device as the growth gas, and a mixed gas of mono-silane (SiH4) and phosphine (PH3) is flowed in from a gas introducing pipe 6. The rate of phosphite in the growth gas is made a 8% or lower molar ratio to the total of mono- silane and phosphite. Accordingly, the PSG film, which is excellent in wetproof property and generates few cracks in annealing treatment, is formed.
Patent JP-S60262151-A (JP)
Title: Intermediate layer for 3-layer resist material and method for using it
Inventor: IKITSU HIDEO
IPC: H01L21/027
Filed: 1984-06-11
Abstract: PURPOSE:To enhance resistance to O2 and RIE by forming on a substrate a lower resist layer made of an org. polymer, an intermediate layer made of a specified organopolysiloxane, and an upper resist layer made of a polymer brigeable with radiation. CONSTITUTION:The intermediate layer formed on the lower resist layer made of an org. polymer formed on a substrate is made of an organopolysiloxane represented by the formula in which R is a hydrocarbon, H, OH, or alkoxy group, and m+n+p+q=1, m>0, n,p,q>=0, and (p+q)/(m+n)>=0.8. The upper resist layer made of a polymer bridgeable or decomposable with radiation is laminatd on it, and it is exposed and developed to form a desired pattern. The intermediate layer is etched with F-contg. plasma, and the lower resist layer is etched to form the 3-layer resist pattern.
Patent JP-2000314047-A (JP)
Title: Fabric of rugged towch, and its production
Inventor: KITADA MITSUAKI
IPC: D03D15/567
Filed: 1999-04-27
Abstract: PROBLEM TO BE SOLVED: To obtain a fabric, highly stretchable in the lateral direction and useful for, e.g. casual wears, by treating, under specific conditions, the fabric which uses conjugate yarns as the weft capable of expressing crinkles, to express random, three-dimensional irregular patterns in the longitudinal direction both on the front and back sides. SOLUTION: This fabric having a stretch ratio of 5% or more in the lateral direction is obtained by treating, with hot water of 80 deg.C or higher, the fabric which uses the conjugate yarns of polyester as the weft, the conjugate yarn comprising at least two components different in thermal shrinkage characteristics (e.g. low-density and high-density polyester components), conjugating in parallel to each other or in a core-sheath manner and preferably having a shrinkage stress of 0.265 CN/dtex or more, and expressing random, three- dimensional irregular patterns in the longitudinal direction both on the front and back sides by the ability of the conjugate yarn to express the coil-like crinkles in the lateral direction. It is preferable to thermally set, at 120 deg.C or higher, the fabric which has been treated with hot water.
Patent JP-S60261895-A (JP)
Inventor: MAKABE HIDEKAZU
IPC: E21D9/06
Filed: 1984-06-11
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H06331392-A (JP)
Title: Digital vehicle operation recorder
Inventor: KOMATSU TOSHIO
IPC: G01D9/00
Filed: 1993-05-21
Abstract: PURPOSE:To enable the saving of the capacity of a memory by a method wherein an entry processing is performed automatically when a specified time is reached after the entry operation by an operator is ceased and the recording of data is stopped until the subsequent exit operation is made thereafter. CONSTITUTION:An exit processing and an entry processing are performed separately in response to an exit operation and an entry operation by an exit/entry operation mean 16. After the exit processing, an operation is started to write, recover and collect vehicle operation data including a running speed of a vehicle varying every second into a memory means 12b by a writing means 11b together with generation time thereof by a timepiece means 12a1 and after the entry processing, the record collecting operation is ended. When the entry operation is not done even when the predetermined time is reached, the automatic entry means 11c performs the entry processing automatically.
Patent JP-S609980-A (JP)
Inventor: KATABE KENICHI
IPC: D06P1/645
Filed: 1983-06-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S60263463-A (JP)
Title: Manufacture of planar type thyristor
Inventor: OKAMURA YOSHIO
IPC: H01L29/74
Filed: 1984-06-11
Abstract: PURPOSE:To improve the productivity while minimizing the difference in thickness of oxide film by a method wherein the surface comprising a P type emitter region, an N type base region, a P type base region is etched into preliminarily specified thickness in case of forming an N type silicon substrate and then each region is formed. CONSTITUTION:A planar type thyristor is produced utilizing one conductive type semiconductor substrate wherein overall surface comprising a multiconductive type emitter region 2, one conductive type base region 1 and multiconductive type base region 3 is etched into preliminarily specified thickness. Through these procedures, pinholes in an oxide film may be prevented from happening only on the upper surface not to be protruded from the P type emitter layer 2 to the N type base layer 1 and the P type base layer 3 due to the elements formed into almost the same level. Besides, the upper surface from the P type emitter layer 2 to the N type base layer 1 and the P type base layer 3 may be protected by means of etching the substrate deeper subject to no influence of the P type base layer 3 and N type emitter layer 1 or P type emitter layer 2 upon pinholes.
Patent JP-S5643739-A (JP)
Title: Semiconductor device and manufacture thereof
Inventor: NAGANO KAZUTOSHI
IPC: H01L21/76
Filed: 1979-09-17
Abstract: PURPOSE:To remove a stress concentration in an interface between an island region and an isolation by a method wherein an insulating film that unified with the insulator is provided on a surface of an island region of the semiconductor device with an island region which isolated a bottom and a side phases by a porous oxidation. CONSTITUTION:A boron is injected to the surface of an N type Si substrate 21 to form a P type layer 31, an N type epitaxial layer 32 is formed thereupon. An SiO2 layer mask 33 is arranged on the surface of the epitaxial layer, and the boron is selectively diffused, and after the P type isolation region 34 to be reached to the P type layer 31 is formed, the mask 33 is removed to form the P type layer 35 throughout the surface of the epitaxial layer. The said substrate is doped in a hydrofluoric aqueous solution to perform an anodizing while performing the light illumination and the P type portion is converted to the porosity layer 37-39 and oxidized thereof, the unified SiO2 layer 22-24 are formed. In this way, the completely isolated island region 25 without the stress concentration can be readily formed.
Patent JP-S5816910-A (JP)
Inventor: ROORENSU JIYOOJI NIKORUZU
IPC: B60G13/06
Filed: 1982-07-09
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5911330-A (JP)
Title: Resin molding material and its production
Inventor: SAKATA HIKARI
IPC: B29B9/00
Filed: 1982-07-12
Abstract: PURPOSE:To obtain a resin molding material having good fluidity and a sufficient antitack effect, by coating the surface of an ethylenic copolymer resin molding material with a specified complex aqueous emulsion in the presence of EVA. CONSTITUTION:The surface of an ethylenic copolymer resin molding material or of a hot melt composition molding material containing an ethylenic copolymer resin as a component is coated in the presence of an ethylene/vinyl acetate copolymer with a complex aqueous emulsion prepared by adding fine polyethylene powder to an aqueous emulsion of an ethylenic copolymer or of a waxy carboxylated ethylene/vinyl acetate copolymer prepared by using an emulsifier which is a carboxylated ethylene/vinyl acetate copolymer prepared by neutralizing at least 50 chemical equivalent % of carboxylic acid of a copolymer obtained by copolymerizing an alpha,beta-unsaturated carboxylic acid or its anhydride with one vinylidene monomer of the formula (wherein X and Y are H, Cl, alkyl, acetoxy, or a carboxylate ester group).
Patent JP-H05292786-A (JP)
Title: Driving system for dc brushless motor
Inventor: HORIE HIDEO
IPC: H02P6/06
Filed: 1992-04-13
Abstract: PURPOSE:To obviate the necessity of conventionally required high power switching element and resistor for converting the output from a PWM circuit to high potential side by disposing a switching element on the low potential side of a DC power supply. CONSTITUTION:A PWM controller K generates a pulse output having width corresponding to the level of torque command signal. The pulse output drives a switching element S3 to turn the voltage of a DC power supply E ON/OFF and the voltage is smoothed through a coil L and a capacitor C to be applied on transistors Q1-Q6 connected complementally. On the other hand, a motor drive control circuit DR receives an output from a rotor position detector RT and produces an output for controlling the transistors Q1-Q6 through a photocoupler PC. Since the switching element S3 is disposed on the low potential side of the DC power supply E, conventionally required high power resistor and high speed switching element can be obviated.
Patent JP-H0320094-A (JP)
Title: Manufacture of unimorph type piezoelectric actuator
Inventor: MURAI MASAMI
IPC: H04R17/00
Filed: 1989-05-12
Abstract: PURPOSE:To assure enough bonding strength by forming a plated layer on an electrode of PZT plate and by making the plated layer function as a reinforcing sheet. CONSTITUTION:A piezoelectric actuator is not formed by bonding a ceramics plate (PZT plate) 1 mainly composed of lead titanate lead zirconate and a reinforcing sheet 5 but is formed by forming a metal or alloy directly on an electrode 2 by plating and by making a plated layer 3 function as a reinforcing sheet; a bonding layer is not provided. Heat treatment for removing of distortion due to plating improves bonding strength and long-term reliability. Thereby, a piezoelectric actuator can be acquired which is superior to a conventional one in initial bonding strength and that after heated and left to stand.
Patent JP-S63284942-A (JP)
Title: Flow control system by mac bridge
Inventor: ISAYAMA TETSUO
IPC: H04L12/46
Filed: 1987-05-15
Abstract: PURPOSE:To prevent data from being transmitted wastefully under the control of a MAC sublayer or less, by providing a means which returns received data to a transmission origin at a MAC bridge when a difference between data quantities in transmission and reception arrives at a prescribed value between LANs. CONSTITUTION:When communication between a first LAN1 and a second LAN2 is relayed by the MAC bridge 10, the detecting means 30 of the MAC bridge 10 detects the difference between the data quantity received from the LAN1 and the data quantity sent to the LAN2. And when the difference arrives at the prescribed value, the data is returned to the transmission origin after correcting the frame format of a reception signal by starting up an address attaching means 15 and an FCS attaching means 13. Therefore, no deletion of the data at the MAC bridge 10 is generated, and wasteful data transmission can be prevented from being generated.
Patent JP-S5821129-A (JP)
Title: Measuring apparatus for temperature of water
Inventor: FUJIWARA JIYUNICHI
IPC: G01K11/24
Filed: 1981-07-29
Abstract: PURPOSE:To measure the tendency of temperature of underwater, by using a depth measuring apparatus sending an ultrasonic pulse in the direction nearly right under from the bottom of a ship and an ultrasonic wave transmitting and receiving apparatus assuming a direction of an angle theta for said apparatus and computing the depth and time up to return. CONSTITUTION:Ultrasonic wave transmitting and receiving equipments 1, 2 are equipped  on the bottom of a ship 3 and waves are transmitted and received toward directly under the sea bottom by the equipment 1 and also, the waves are transmitted and received toward the rear of the sea bottom by an angle theta for right under the sea bottom in a navigation direction by the equipment 2. A pulse of a transmitter 19 is sent by the equipment 1 and depth data Do are stored in a storage circuit 7 from the output of received wave of a receiver 4 and a distance meter 8 for rhumb line. The pulse of a transmitter 9 is transmitted by the equipment 2 and the horizontal distance is computed by a horizontal distance operation circuit 14 through a directional angle control device 13 and is sent to a propagation time operation circuit 16 together with the data Do of the circuit 7. The ratio of really measured time obtained by a latch circuit 12 is computed by a comparison circuit 17 and is displayed on a display device 18. Accordingly, the tendency of variation of underwater temperature is known by the displayed value of the device 18.
Patent JP-S5821324-A (JP)
Title: Pretreatment of metal surface substrate for semiconductor thin film growth added with hydrogen
Inventor: HAYASHI YUTAKA
IPC: H01L31/0248
Filed: 1981-07-30
Abstract: PURPOSE:To realize good ohmic contact between a substrate metal layer and a thin film by exposing the substrate to hydrogen plasma beforehand when a semiconductor film with hydrogen added thereto is grown on a metal layer provided on the substrate surface in a semiconductor thin film growing unit. CONSTITUTION:This relates to a method of the vapor phase growing of a thin film of amorphous Si, semiconductor fine crystals, amorphous Ge, amorphous SiC, or the like, all with H added thereto, on a substrate covered with metal in a semiconductor thin film growing unit. Prior to the film growing process, the metal layer coating the substrate is exposed to hydrogen plasma for the reduction of the oxide film on the surface. This method enables ohmic contact to be established with high reproducibility, even in the case said contact is not available due to the presence of high or wide barriers or impurities hampering the realization of ohmic contact between a metal layer and a semiconductor thin film.
Patent JP-H02299048-A (JP)
Title: Transfer control system
Inventor: CHIBA HIDEAKI
IPC: G06F13/00
Filed: 1989-05-12
Abstract: PURPOSE:To improve the performance of communication control by securing a data buffer for several necessary transfer bytes in a main storage part and starting data transfer when data which is longer than specified are transferred, and inhibiting interruption control. CONSTITUTION:When the data transferred from a host 10 is longer than predetermined reference data length, a continuous transfer flag which signifies continuous data transfer turns on and when the condition that the number of transfer bytes which is set from the side of a central processor 16 becomes to zero is satisfied, an interruption control part 22 is inhibited from operating. Further, a control program 20 secures the data buffer area in the main storage part 18 prior to the data transfer. Then a transfer address and the number of transfer bytes as data buffer area control information that the control program 20 has in advance are transferred to the side of a channel adapter 14 to start the data transfer. Consequently, even if the data length increases, the load on the control program of a communication controller can be reduced.
Patent JP-H09305284-A (JP)
Title: Process control method
Inventor: YAMAMOTO TADASHI
IPC: G05B23/02
Filed: 1996-05-15
Abstract: PROBLEM TO BE SOLVED: To recognize whether or not abnormality occurs by automatically monitoring the state of application consisting of plurality of processes and the state of the processes of the whole system. SOLUTION: On a storage medium of a process managing means 1, the names of processes to be monitored, the number of the processes operating in the system, user names, etc., are previously set as monitored process information. The process managing means 1 acquires information on a process operating in the system 2 from a kernel 2, retrieves monitored process information matching the acquired process information from among monitored process information, and compares the number of processes set in the retrieved monitored process information with the acquired process information, i.e., the number of processes in operation to check whether they match each other. If both the numbers of processes are different, the process managing means 1 judges that abnormality occurs and informs a system 3 such as a user and other managers of the abnormality occurrence.
Patent JP-S6012257-A (JP)
Title: Mold for continuous casting of beam blank
Inventor: FUNATSU KATSUUMI
IPC: B22D11/04
Filed: 1983-07-01
Abstract: PURPOSE:To provide a titled casting mold which can easily change the flange thickness of a beam blank by the constitution in which the long sides having projecting parts for forming a web of a casting mold are fixed and supported and the short pieces thereof are fixed and supported freely movably by pressing, moving and supporting devices. CONSTITUTION:A mold for continuous casting of a beam blank consists of combining long pieces 6a, b having projecting parts 9a, b for forming a web and short pieces 7a, b, forming a cavity 11 consisting of parts 12a, b corresponding to flanges and a part 13 corresponding to a web. Said long pieces 6a, b of such mold are fixed and supported by fixing and supporting devices (not shown in the figure) and the short pieces 7a, b are fixed and supported freely movably by pressing, moving and supporting devices 8a, b. Said pieces 7a, b are moved before or after casting or during casting by engaging fittings 14a, b driven by the cylinders 16a, b and piston rods 15a, b of the devices 8a, b, by which the flange thickness of the beam blank is easily changed and the selective casting of many sizes of casting billets is made possible.
Patent JP-2000032904-A (JP)
Title: Production of bread
Inventor: NAKAMURA AKINORI
IPC: A21D8/00
Filed: 1999-04-27
Abstract: PROBLEM TO BE SOLVED: To prepare a bagel-like bread having smooth glossy crust, light soft palatability and excellent taste, homogeneous in palatability among products and also among parts of an individual product, and suitable for freezing. SOLUTION: A dough prepared by kneading a raw material consisting of at least wheat flour, yeast, salt and water is subjected to an initial fermentation for 10-20 min at room temperature. After divided and rounded, the dough is subjected to a middle fermentation, then treated in a gas-removing process and a forming process, and subjected to a tertiary fermentation. The product is placed in a steaming box, steamed at a temperature of >=90 deg.C and <100 deg.C, and then baked.  It is preferable that, when the dough is divided, the period of time from the start to the end of the dividing is less than 30 min, the kneading temperature is set at 15-20 deg.C, the length of the middle fermentation is 20-30 min, the dividing and rounding are performed mechanically, the divided dough is mechanically formed into a bagel shape, the baked bread is frozen and/or xanthan gum is added on the kneading process from the raw material to the dough.