baber/WOPTO huggingface dataset:
Patent JP-S59184858-A (JP)
Title: Tool damage detecting device
Inventor: SASAKI KOUBOU
IPC: G01H17/00
Filed: 1983-04-05
Abstract: PURPOSE:To detect exactly a damage of a cutting tool in the course of cutting by converting a mechanical vibration in the course of cutting to an electric signal, and constituting so that an alarm is generated when a ratio of a mean value of this electric signal and a signal which has delayed this mean value by a prescribed time exceeds a prescribed value. CONSTITUTION:A sensor 1 is attached to a cutting machine, and converts a mechanical vibration by cutting to an electric signal. A signal converting circuit 2 is a circuit for converting an output signal of the sensor 1 to a mean value signal, and constituted of an amplifier 21, a filter 22 and a mean value detecting circuit 23. A delaying circuit 3 delays a mean value signal by a prescribed time. An alarm circuit 4 is constituted of an attenuator 41 for attenuating the mean value signal, a comparator which compares a magnitude of an output signal of the attenuator 41 and an output signal of the delaying circuit 3, and generates an output signal when a value of the output signal of the attenuator 41 is larger, and a delay 43 for generating an alarm signal. In this way, a damage of a tool is detected by an inclination of rise of the mean value, and a variation quantity of the mean value.
Patent JP-S60203958-A (JP)
Title: Photosensitive body
Inventor: YAMAZAKI TOSHIKI
IPC: G03G5/08
Filed: 1984-03-28
Abstract: PURPOSE:To retain stably the high electrostatic charge potential of a photosensitive body and to provide satisfactory optical fatigue characteristics and suitability to negative electrostatic charge by incorporating a specified amount of O into the charge transferring layer of hydrogenated and/or fluorinated a-SiC formed under the charge generating layer of hydrogenated and/or fluorinated a-Si. CONSTITUTION:A charge transferring layer 42 of amorphous hydrogenated and/ or fluorinated silicon carbide is formed under a charge generating layer 43 of amorphous hydrogenated and/or fluorinated silicon, and 50-500ppm O (Si+C= 100atom%) is incorporated into the layer 42 to obtain a separated function type photosensitive body. By incorporating 50-500ppm O into the layer 42, the charge retentivity (dark resistance) is effectively increased without reducing the charge transferring power, and the temp. dependency of the dark resistance can be controlled. Accordingly, it is necessary to set the O content at 50-500ppm, desirably 70-300ppm. The electrostatic charge potential retentivity is increased, the upper limits of the service temp. and humidity of the photosensitive body can be increased, and the photosensitive body is made suitable for negative electrostatic charge.
Patent JP-H02241687-A (JP)
Title: Laser beam machine
Inventor: NAKAE KASHIO
IPC: B23K26/142
Filed: 1989-03-13
Abstract: PURPOSE:To machine a couple of machining places on a prescribed plane at the same time under optimum conditions at all times by positioning respective machining heads by an oscillation part and a movement part so that the distance between these machining heads and the machining places corresponding to these is maintained at a prescribed value at all times. CONSTITUTION:The respective machining heads 1 and 2 are mounted on traveling bases 11 and 21 corresponding thereto and can travel straight along a traveling axis and can oscillate around an oscillation axis 13 by the oscillation part and moreover, can make parallel movement spatially with respect to the prescribed plane by the movement part. Moreover, these machining heads are positioned by the oscillation part and the movement part so that the distance between the machining heads and the machining places corresponding to these heads is maintained at the prescribed value at all times. In addition, the respective machining heads 1 and 2 can either travel straight symmetrically mutually with respect to a fixed point on the traveling axis or can oscillate symmetrically mutually with respect to the plane where the optical axis divides a line to connect the respective machining heads 1 and 2 into two equal parts at right angles at least. Further, the front parts of the respective machining heads 1 and 2 are intercepted from peripheral air by clean air from a blow-off pipe 6 and protected from sticking of dirt and machining is performed under the optimum conditions at all times.
Patent JP-H09225104-A (JP)
Title: Pachinko machine
Inventor: SATO SHOJI
IPC: A63F7/02
Filed: 1996-02-22
Abstract: PROBLEM TO BE SOLVED: To enable a player to attract the more interest by varying the number of great success gift balls corresponding to respective great success picture patterns. SOLUTION: In this pachinko machine 15, plural success picture patterns [111]-[FFF] are set, picture patterns on a variable display part 2 are fluctuated and the picture pattern fixed after the lapse of prescribed time is corresponding to one of these plural success picture patterns, this a great success state is obtained. At that time, a great success price winning hole 36 is opened so that the amount of gift balls is increased. In this case, by changing the number of prize winning balls corresponding to the great success prize winning hole 36 or the time to open that hole corresponding to these plural success picture patterns, this increased amount of gift balls is changed.
Patent JP-H10242181-A (JP)
Title: Method for forming dielectric layer to make it as protective layer
Inventor: KA RYOSHU
IPC: H01L21/56
Filed: 1997-02-28
Abstract: PROBLEM TO BE SOLVED: To obtain a protective layer being a more-excellent material for isolating free ions and water compared with nitride silicon, free from a high stress, and having an excellent conductive line property, by forming a dielectric layer not containing silicon on a semiconductor construction formed on a bottom material, and using the dielectric layer as a protective layer. SOLUTION: A semiconductor construction is formed on a bottom material 10, and a dielectric layer 14 not containing silicon is formed on the semiconductor construction, and the dielectric layer 14 not containing silicon is used as a protective layer. For example, a semiconductor construction containing a conduction construction 12 like a metal wire made out of tungsten or aluminum is formed on the bottom material 10. After that, a phoslon dielectric layer 14 made out of PxNyOz is formed, by a traditional chemical vapor growth method which uses a hydrogen triphosphide, a nitrogen gas, an ammonia gas, and an oxygen gas, or by a plasma enhanced chemical vapor growth method. In that case, a depositing temperature is controlled between 400 deg.C and 900 deg.C, and the thickness of the phoslon dielectric layer 14 is about 50-2,000 angstroms.
Patent JP-H10236741-A (JP)
Title: Landing equipment parameter setting device
Inventor: NAKAMURA KUNIKO
IPC: B66B1/16
Filed: 1997-02-28
Abstract: PROBLEM TO BE SOLVED: To provide a landing equipment parameter setting device whereby landing equipment parameters can be easily set at installation time or maintenance replacement time in a double deck elevator without providing a protruded floor. SOLUTION: When a reference car is assigned in the case of determining a parameter discriminating a landing equipment, in a reference car determining device 1, of an upper/lower car, the assigned car is determined as a reference car, by a reference car draw back device 2, the reference car determined in the reference car determining device is drawn back and stopped in an assigned draw back floor. A parameter determining device 3, based on a floor stopping the reference car determined by the reference car determining device 1, determines a parameter, in a parameter transmitting device 4, the parameter determined by the parameter determining device 3 is transmitted to a landing equipment of a floor with the reference car positioned.
Patent JP-S60202932-A (JP)
Title: Manufacture of semiconductor device
Inventor: TAGUCHI TAKAO
IPC: H01L21/28
Filed: 1984-03-28
Abstract: PURPOSE:To improve the wetting of an electrode metal and a semiconductor, and to form an ohmic contact having a low resistance value and a fine area by mixing the electrode metal and the compound semiconductor on the interface between them by projecting focussed ion beams before an alloying process. CONSTITUTION:An electrode metal 23 is formed on an n type impurity layer 22 shaped on a semi-insulating substrate 1 to a proper shape through an evaporation method and a lift-off method. Ions generated by a liquid metallic ion source, etc. are focussed by a lens, and focussed beams 24 are scanned on the electrode 23. The electrode metal 23 and a semiconductor are mixed on the interface between them. An ohmic contact is prepared through an alloying process.
Patent JP-H06269652-A (JP)
Title: Dispersant for aqueous emulsion
Inventor: SAKAMOTO AKIYOSHI
IPC: C09K23/46
Filed: 1993-03-19
Abstract: PURPOSE:To obtain a sizing agent attaining sufficient sizing effect by the addition of a small quantity of aluminum sulfate by adding a cationic surfactant having a specific structure as a dispersant for an aqueous emulsion. CONSTITUTION:As a dispersant for an aqueous emulsion, a cationic surfactant represented by general formula I [where A is a phenyl group having at least one substituent (a phenyl group or a benzyl group) or an alpha- or beta-naphthyl group having at least one substituent (benzyl group or a styryl group) or no substituent, (n) R-groups are an ethylene group or a propylene group, n is an integer of 20-40, R', R'' and R''' are a 1-3 C alkyl group or a hydroxy 2-4C alkyl group and X is halogen] is added.
Patent JP-S59203599-A (JP)
Inventor: KAMIYAMA IWAO
IPC: D06F58/00
Filed: 1983-04-05
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H01234229-A (JP)
Title: Vessel and manufacture thereof
Inventor: KIMURA KINICHI
IPC: B65D1/34
Filed: 1988-03-16
Abstract: PURPOSE:To obtain a vessel which possesses strength enduring lamination and conveyance and thermal conductivity favorable even at the time of heating through any direction, by a method wherein a film is fused to a cagelike reinforcing main body formed of synthetic resin and having a bottom rib and circumferential rib and a space between the ribs is sealed. CONSTITUTION:A circular film 3 which is about the same size as the outside of a male mold to be inserted into a female mold is positioned on the inside of the male mold 1 having an air gap part forming a cagelike reinforcing main body 5 having a circumferential rib and bottom rib. Then a male mold 2 is inserted into a female mold 1 so that the foregoing film 3 is fitted to the male mold and supported with the female mold. Then synthetic resin forming the reinforcing main body 5 through solidification is cast into a space provided between an air gap part of the female mold 1 and film 3 through a casting port 4 provided into the female mold 1. The foregoing synthetic resin is good if it is of a matter fusing the foregoing film. Foodstuffs are held within a vessel to be obtained in this manner and after an opening part is sealed with a lid film formed, for example, of a multi-layer sheet comprised of CPP/Al/OPP layer, the same is heat-treated.
Patent JP-S51136068-A (JP)
Title: Anti-looseness nut
Inventor: NAKAHARA YASUO
IPC: F16B39/36
Filed: 1975-05-20
Abstract: PURPOSE: An anti-looseness nut, that is designed to produce anti-looseness action when it is tightened by forming cut part in dutting process alone without attchment of auxiliary parts for nut. 
     COPYRIGHT: (C)1976,JPO&Japio
Patent JP-S61218630-A (JP)
Title: Production of copolymer polyester
Inventor: NOZAWA SEIICHI
IPC: C08G63/66
Filed: 1985-03-25
Abstract: PURPOSE:To obtain a copolymer which forms thermotropic crystal and provides a molded article having high modulus of elasticity and high strength, by forming an oligomer from a specific oligo(poly)ester and a specific hydroxycarboxylic acid, and polymerizing the oligo(poly)ester in the presence of a tin compound as a catalyst. CONSTITUTION:An oligomer is formed from an oligo(poly)ester shown by the formula I (>=60mol% R<1> is 8-20C bifunctional aromatic hydrocarbon group wherein >=4C exist between carbonyl groups, and <=40mol% R<1> is 6-20C bifunctional aromatic hydrocarbon group, etc.; R<2> is 2-40C bifunctional aliphatic hydrocarbon group, 4-20C bifunctional alicyclic hydrocarbon group, 6-20C aromatic ring-forming bifunctional aromatic hydrocarbon group, or polyalkylene oxide bifunctional group having 80-8,000mol.wt.) and a hydroxycarboxylic acid shown by the formula II (R<3> is as shown for R<1>), and the oligomer is polymerized by the use of a tin compound as a catalyst.
Patent JP-H03263578-A (JP)
Title: Low temperature chamber
Inventor: MASE TOKUTARO
IPC: F25D17/08
Filed: 1990-03-12
Abstract: PURPOSE:To improve the cooling efficiency of an inner casing by a method wherein the title chamber is provided with a first supporting pillar, parti-tioning a space formed of an inner casing side wall and an outer casing into a high pressure side space and a low pressure side space, and a second pillar, partitioning the high pressure side space and the low pressure side space into a plurality of areas further and restraining the flow of cold air along the side wall, is provided. CONSTITUTION:A plurality of metallic supporting pillars 20 are composed of first pillars, partitioning spaces 11C, 11D formed of an inner casing fore side wall 3C, a rear side wall 3D and an outer casing 2 into a high pressure side space H and a low pressure side space L, and a second pillar 24, partitioning the high pressure tide space and the low pressure side space into a plurality of divisions while having a division 22. The first supporting pillar 21 is operated as a directing member, facilitating the flow of cold air along the side wall of the inner casing, which is orthogonal to the flow direction of cold air formed by a ventilating device 13, while the second supporting pillar 24 restricts the flow of cold air along the side wall and stagnates the cold air to lengthen a contacting time between the inner casing and the cold air whereby the distribution of cold air in a cold air circulating space 11 formed around the inner casing 34 can be improved (unified) and, as a result, even cooling in the inner case can be effected.
Patent JP-S57176358-A (JP)
Title: Control valve and measuring device of injection amount
Inventor: ITOU SHINZOU
IPC: F02D41/40
Filed: 1981-04-21
Abstract: PURPOSE: To simplify construction of a device, by providing two sealed parts respectively for fluid injection and discharge ports, opening the both ports through shifting operation of said sealed parts, discharging oil, sealing the fluid discharge port at reset shifting and increasing pressure of a fluid injection chamber.  
     CONSTITUTION: When shafts 101, 102 are operated to a predetermined angle for starting oil discharge operation, a control circuit 4 excites a control solenoid 310 to attract a control valve 300 downward, open the first and second seat parts 301, 302 and discharge fuel oil filled in an injection chamber 5. The oil is discharged, and a stepped stopper part 600 is adapted to a piston fitted end face 603, then tension of a spring 602 becomes 0, thus the control valve 300 begins rising. Then the valve reaches the first seat part 301 to enclose the injection chamber 5 and increase pressure in the injection chamber 5, if the control solenoid 310 is turned off, the control valve 300 is rapidly lifted to the closing of the second seat part 302. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H10306766-A (JP)
Title: Reversible pump-turbine
Inventor: KUWABARA HISAO
IPC: F03B11/00
Filed: 1997-03-14
Abstract: PROBLEM TO BE SOLVED: To improve on abnormality of S-shape characteristic twist and water hammer interference, particularly abnormal rise of water pressure at the time of time difference cutoff, generated between a plurality of reversible pump- turbines with a common pipeline. SOLUTION: An upper pond side pipeline or a lower pond side pipeline branches off near the reversible pump-turbine end, and the pipeline beyond a branch point is used in common for a plurality of reversible pump-turbines. At least the first reversible pump-turbine out of these reversible pump-turbines is provided with a rotaing speed increase detecting device, and when the rotating speed of the first reversible pump-turbine is detected to have exceeded the second specified value higher than the rated speed, a command is also sent to at least one of the other reversible pump turbines, and guide vane closing speed is limited to the speed equal to or less than the speed after a gradual closing shift.
Patent JP-H08261534-A (JP)
Title: Storage case for clean room
Inventor: SUZUKI JUNICHI
IPC: B65D25/02
Filed: 1995-03-20
Abstract: PURPOSE: To provide a storage case for a clean room wherein even when concerned research documents and sheets of paper for manufacturing semiconductors are carried in, a clean room is prevented from being contaminated with dust, etc., adhering to those carried articles, and works of observation, recording, or writing of those articles for works and researches can be very easily achieved. CONSTITUTION: A storage case for a clean room comprises a closed storage case 1 for preventing inside dust from flowing out, an opening/closing port 3 which is disposed for taking documents into and out of the case 1 and which is capable of air tight, a transparent part 2 through which characters of documents accomodated in the case can be read, and a glove 5 into which a hand can be inserted from the outside and which is shielded between the inside and outside thereof. Hereby, any dust adhering to documents is prevented from flowing into the clean room. Further, documents accomodated in the case can be read through the transparent part 2, and recording work is ensured by inserting a hand into the glove 5.
Patent JP-H10254634-A (JP)
Title: Storage device and restoration means for storage device
Inventor: KITAMURA MANABU
IPC: G11B20/18
Filed: 1997-03-14
Abstract: PROBLEM TO BE SOLVED: To shorten restoration time or to minimize the number of recording/ reproducing devices used for restoration so as not to obstruct a processing to other media at the time of a medium fault in a library device provided with the redundant array constitution of portable media. SOLUTION: In the library device for constituting a redundant array by the plural media 20, a standby medium is loaded to a standby drive 22 at all times, and at the time of the medium fault, data restoration is quickly performed without carrying the standby medium from a storage container 21. Or a nonvolatile storage device such as a disk device 220 or the like is provided other than the plural recording/reproducing devices, and at the time of the medium fault, it is replaced by using the disk device 220 as the standby medium.
Patent JP-S57175847-A (JP)
Title: Manufacture of selective absorption film for solar heat collection
Inventor: NAKAMURA KAZUO
IPC: C23C14/06
Filed: 1981-04-23
Abstract: PURPOSE:To carry out the titled method accurately and easily by sputtering a target made of about an indentical material with a film to be made, which is contained in a vacuum container, in making selective absorption film constituted with chrome oxide and metallic chrome mixed at a composition ratio within a fixed range. CONSTITUTION:In making selective absorption film for a solar heat collection, which is made up of a composition ratio of chrome oxide Cr2O3 50-80vol% and metallic chrome Cr 50-20vol% a material which combines and mixes a chrome oxide granule with a metallic chrome granule at about equal composition ratio within a fixed range with those of the selective absorption film is used as a target. The target material is contained inside a sputtering device, for example the target is made into the cathode and the surface of a base material to be attached is made into the anode, and a vacuum container s ventilated beforehand. Then, very high voltage (approximately 300-1,000V) is applied to the target material, sputtering is carried out while argon is introduced and pressure of the argon in the vacuum container is kept at proper value, and the selective absorption film is completed.
Patent JP-H09251428-A (JP)
Title: Test method for reception-side channel and channel device for the same
Inventor: GOTO TETSUHIRO
IPC: G06F11/22
Filed: 1996-03-18
Abstract: PROBLEM TO BE SOLVED: To efficiently realize the test and diagnosis of a reception-side channel without using a special test device by arbitrarily transmitting a signal and applying a pseudo fault in a transmission signal when a transmission-side channel shifts to a certain state. SOLUTION: The test control data analysis part 37 for a test program (SUB) 34 analyzes test control data and an inter-system connection channel (ISCH)-SS flag generation part 38 generates an ISCH-SS control flag from the analysis. An expected value generation part 39 generates the terminated result expected value of ISCH-SS when a fault signal is applied, and an instruction execution part 3A causes ISCH-SS to execute an operation which a test expects. The regular processing part 3B of ISCH-SS executes the a regular processing part regular operation and a fault/signal applying processing part 3C executes a fault applying/signal applying processing shown by the ISCH-SS control flag. When the transmission-side channel shifts to the certain state, the signal is arbitrarily set to be a transmission possible state and the pseudo fault is applied in the transmission signal.
Patent JP-H06275912-A (JP)
Title: Semiconductor laser device and its manufacture
Inventor: ANAYAMA CHIKASHI
IPC: H01S5/00
Filed: 1993-03-19
Abstract: PURPOSE:To reduce the capacitance of a one-time growth TS type semiconductor laser device by providing a capacitance reducing layer, whose part provided along a (311) A plane is p-type and the part provided along other planes is permitted to have low carrier concentration, between a p-type clad layer whose whole plane is p-type and a remote junction current shielding layer. CONSTITUTION:A one-time growth TS type semiconductor layer has a low carrier concentration capacitance reducing layer 6 on the interface of a pn- junction on a remote junction current shielding layer 3 to which forward bias is added among pn-junctions on a plane (100) other than a light emitting part on a plane (311) A. Since the pn-junction formed in the Al GaInP on the plane (100) has a higher built-in potential than the pn-junction in a GaInP activating layer, potential barrier is left even when the laser device is oscillated by forward bias. The potential permits at least major part of the capacitance reducing layer 6 to be depleted. Thus, the capacitance of the whole element is reduced.
Patent JP-H04363517-A (JP)
Title: Heating floor material
Inventor: IMAI AKIRA
IPC: F24D19/00
Filed: 1991-03-26
Abstract: PURPOSE:To offer a heating floor material which makes nearly even the surface temperatures of floor finishing materials having different heat transfer coefficients and does not give users uncomfortable feeling when it is used. CONSTITUTION:A heater 1 is buried in a base material 2 and floor finishing materials having different heat transfer coefficients are laid on the base material 2 in a mixed state. A heat transfer compensating member 4b having a lower heat transfer coefficient is placed under the time floor finishing material 3b having a higher heat transfer coefficient and/or a heat transfer compensating member 4a having a higher heat transfer coefficient is placed under the floor finishing material 3a having a lower heat transfer coefficient to make the surface temperatures of the floor finishing materials 3a and 3b uniform. Therefore, the amounts of heat to be transferred to around the surfaces of the floor finishing materials having different heat transfer coefficients can be made nearly even.
Patent JP-S51135472-A (JP)
Title: Creation of porous semi-conductors
Inventor: TOMIOKA TATSUYUKI
IPC: H01L21/3063
Filed: 1975-05-20
Abstract: PURPOSE: Supply of a porus silicon crystal free from the swelling after oxidization without previous removal of the porus surface. 
     COPYRIGHT: (C)1976,JPO&Japio