baber/WOPTO huggingface dataset:
Patent TW-594476-B (TW)
Title: Apparatus and method for allocating buffer space
Inventor: HUGHES WILLIAM ALEXANDER
IPC: H04L12/56
Filed: 2002-10-08
Granted: 2004-06-21
Abstract: An apparatus is described in which the locations of a buffer are used to store a plurality of control packets received in a node, wherein the plurality of control packets belong to a plurality of virtual channels. The number of locations assigned to each virtual channel may be dynamically allocated. The number of locations allocated to each virtual channel may be determined by an update circuit. Count values corresponding to the number of locations allocated to each virtual channel may then be stored within a programmable storage, such as a register, for example. The count values may be subsequently copied into a slave register and incremented and decremented as locations become available and notifications corresponding to the available locations are sent, respectively.
Patent TW-I276371-B (TW)
Title: 3D stereoscopic X-ray system
Inventor: SWIFT DAVID C
IPC: H05G1/00
Filed: 2002-10-31
Granted: 2007-03-11
Abstract: The present invention provides a means to augment or upgrade a traditional single beam 2D x-ray system to produce 3D stereoscopic output. The system utilizes the cross-sectional beam divergence of a single source x-ray unit to generate perspective information. This is achieved by scanning the object twice where the object is shifted parallel to the cross-sectional beam plane between scans. The resulting two scans can be displayed on a 3D stereoscopic viewing system to produce a 3D stereoscopic representation of the object thus revealing all three-depth dimensions.
Patent TW-I265686-B (TW)
Title: System and method for secure communications with a remote software program
Inventor: CLINE TROY LEE
IPC: H04L29/06
Filed: 2002-11-04
Granted: 2006-11-01
Abstract: In one embodiment of the present invention, a messaging program at a remote computer can send a first message to a portal computer according to a one-way protocol such as HTTP. A portal program at the portal computer can receive the first message and determine if information should be sent to the portal computer. If so, the portal computer can generate a reply message that includes the information and send the reply message to remote computer on the same connection over which the first message was received, in this manner, the portal computer can send configuration control information and other information to the messaging program without requiring leased lines, dial-up connections or a VPN. Moreover, since the communication according to the one-way protocol was initiated at the remote computer, a firewall will allow the remote computer to receive the reply message.
Patent TW-I271854-B (TW)
Title: Semiconductor device
Inventor: AIHARA KAZUHIRO
IPC: H01L29/78
Filed: 2002-11-05
Granted: 2007-01-21
Abstract: An Si crystal film functioning as a channel region is formed on an SiGe crystal film substrate. Furthermore, an SiGe crystal film functioning as a channel region is formed on the Si crystal film. In addition, on the opposite sides of the SiGe crystal film and the Si crystal film, an Si crystal film functioning as a source/drain region is formed. Moreover, a gate electrode is formed on the SiGe crystal film with a gate insulator film interposed. In accordance with the configuration described above, SiGe crystal film prevents the native oxidation of the Si crystal film. As a result, it is possible to obtain a semiconductor device that solves a problem caused by decrease in a conductivity in the Si crystal film resulting from the native oxidation of a surface of the Si crystal film.
Patent TW-I232506-B (TW)
Title: Method for producing amorphous silicon layer with reduced surface defects
Inventor: YANG SHIH-I
IPC: H01L21/28
Filed: 2002-12-20
Granted: 2005-05-11
Abstract: A method for producing an amorphous silicon layer with reduced surface defects comprises: mounting a substrate in a chemical vapor deposition (CVD) device; introducing a SiH4 gas with a low flowrate into the CVD device for depositing a first amorphous silicon layer on the substrate, in which the flowrate of the SiH4 gas is about 60 to 100 sccm; and introducing a SiH4 gas with a high flowrate into the CVD device for depositing a second amorphous silicon layer on the first amorphous silicon layer, in which the high flowrate of the SiH4 gas is about 110 to 160 sccm.
Patent TW-I279786-B (TW)
Title: Data recording medium, data recording method and device, data regeneration method and device, data transmission method and data receiving method
Inventor: SAKO YOICHIRO
IPC: G11B20/12
Filed: 2003-02-18
Granted: 2007-04-21
Abstract: The data recording medium according to the present invention includes at least the read-in area, the data recording area recorded with data, and the read-out area; wherein, the data recording area includes the first recording area portion recorded with the data in error and correction encoding, and the second recording area portion at least recorded with the encoded data by the polynomials generated with several types of error and correction encoding.
Patent TW-588270-B (TW)
Title: Consultation services system
Inventor: LIN SHU-FEN
Filed: 2003-05-06
Granted: 2004-05-21
Abstract: A consultation services system can be roughly classified as an inquirer's area, an answer area and an information processing area. The inquirer raises new question in the inquirer's area, designates a person to answer and gets an admission ticket to question. With the admission ticket, the inquirer reviews the answer of person who replied, and further raises a question and designates a person to answer. The person who answers brings up explanation of individual or group answer, additional answer or payment dedicated to the raised question by means of entering the admission ticket into the answer area. Moreover, through the introduction area of the person who answers in the information processing area, it is able to enable the inquirer to choose a professional person to answer, and the person who answers receives the actual benefit through the payment scheme in the payment area.
Patent TW-I223884-B (TW)
Title: Under bump metallurgy structure
Inventor: HUANG MIN-LUNG
IPC: H01L21/60
Filed: 2003-06-30
Granted: 2004-11-11
Abstract: An under bump metallurgy structure is applicable for disposing above wafer and on wafer pads. The wafer comprises a passivation layer and an under bump metallurgy structure. The passivation layer exposes the wafer pads, and the under bump metallurgy structure includes an adhesive layer, a first barrier layer, a wetting layer and a second barrier layer which are sequentially formed on the wafer pads. Specifically, the material of the second barrier is tin-nickel alloy.
Patent TW-I232968-B (TW)
Title: Projection optical system, exposure apparatus and device fabrication method
Inventor: YAMADA AKIHIRO
IPC: G02B1/02
Filed: 2003-07-07
Granted: 2005-05-21
Abstract: A projection optical system includes a first optical element that orients an axis [111] as a crystal orientation in a cubic system crystal parallel to an optical axis, and a second optical element that orients an axis [100] as the crystal orientation in the cubic system crystal so that a minimum angle may be 30 DEG or larger between the optical axis and an off-axis edge beam that passes through the second optical element, and a minimum angle may be 10 DEG or smaller between the optical axis and an off-axis principal ray that passes through the second optical element.
Patent TW-I225712-B (TW)
Title: Semiconductor manufacturing method and annealing device
Inventor: ITO TAKAYUKI
IPC: H01L29/78
Filed: 2003-07-17
Granted: 2004-12-21
Abstract: This invention provides a kind of MOS transistor which can prevent depletion from insufficient dopant diffusion in gate and has shallow dopant diffusion layer with low resistivity. The invented manufacturing method of semiconductor device includes forming a gate insulating layer upon a single crystal semiconductor substrate, forming a gate electrode made from a polycrystal conductive film upon the gate insulating layer, implanting impurity in the gate electrode and in the surface layer of the semiconductor substrate adjacent to or separated from the gate electrode, performing a first heat treatment, and performing a second heat treatment. The first heat treatment is performed at a temperature that diffuses the impurity implanted mainly in the gate electrode and controls the diffusion of the impurity implanted in the surface layer of the semiconductor substrate. The second heat treatment is performed at a higher temperature and for a shorter time than the first heat treatment, and at a temperature that activates the impurity implanted in the semiconductor substrate.
Patent TW-I244682-B (TW)
Title: A method for forming a sublithographic opening in a semiconductor process
Inventor: SHARMA GIAN
IPC: H01L27/115
Filed: 2003-09-08
Granted: 2005-12-01
Abstract: A first method of forming a sublithographic opening in a first layer of a first material begins by creating a lithographic opening on the first layer with the lithographic opening being over the location of the desired sublithographic opening. The first material in the first layer is partially removed from the lithographic opening. A sacrificial layer of the same material as the first layer is conformally deposited to fit the contour of the first layer, including over the lithographic opening. The resultant structure is anisotropically etched to etch the sacrificial layer as well as the first layer to form the sublithographic opening within the lithographic opening. A second method to form a sublithographic opening is to deposit a sacrificial layer such as polysilicon. A lithographic opening is created in the sacrificial layer with the lithographic opening being positioned over the location of the desired sublithographic opening. The sacrificial material is removed from the lithographic opening. The sacrificial material is then laterally expanded by converting the sacrificial material to a second sacrificial material, thereby decreasing the size of the lithographic opening to a sublithographic opening. This can be done by converting the sacrificial polysilicon into silicon dioxide. The converted silicon dioxide may then be used as a mask layer to etch the underlying layers.
Patent TW-I226807-B (TW)
Title: Penalty of cell reselection for wireless device
Inventor: CHEN REX HUAN-YUEH
IPC: H04W36/08
Filed: 2003-10-03
Granted: 2005-01-11
Abstract: An improved device and method for determining when to start a timer that applies a temporary offset to a signal quality measurement of a cell that is a candidate for reselection in a 3GPP Hierarchical Cell Structured wireless communications system. For a cell ranking criterion R, the timer is started to apply the temporary offset according to present invention rules that insure that the temporary offset is not applied until a candidate is eligible for reselection, preventing premature expiration of the timer and unintended cell reselection. A present invention mobile unit that uses the improved method includes a housing, a central processor, a timer for applying the temporary offset, and a memory. The memory includes computer code that applies the claimed invention rules for starting the timer.
Patent TW-I249669-B (TW)
Title: Execution of modified cheney scanning in a multithreaded processing environment
Inventor: HUDSON RICHARD
IPC: G06F12/02
Filed: 2003-11-13
Granted: 2006-02-21
Abstract: In one embodiment a memory management method uses a third finger fetching pointer thread operating on memory objects distributed in a second memory space between a scan pointer thread and an allocation pointer thread to fetch objects in the second memory space prior to them being scanned. The fetching thread is moved to a next memory slot in the second memory space when the scanned memory slot does not hold a pointer to an object in the first memory space. The memory object is prefetched into a cache shared with an allocation pointer thread when the scanned memory slot holds a pointer to an object in the first space.
Patent TW-I231550-B (TW)
Title: Manufacture method of memory card with enhanced yield
Inventor: LIN WU-SHIU
IPC: H01L21/56
Filed: 2003-11-14
Granted: 2005-04-21
Abstract: A kind of manufacture method of memory card with enhanced yield is provided. This invention is to provide a circuit board, a package protection ring, a substrate protection ring, and lower protection board; form a package onto the circuit board; install a small aperture with size larger than the package onto the package protection ring and install a large aperture with size larger than the circuit board; align and stack to accommodate the package into the small aperture and the circuit board into the large aperture; and hot press the whole set to an integrated body and cool it down. Because each of the components is hot-pressed on the same uniform surface, which is followed by cooling, the sealability of hot press is improved, which, in turn, reduces the sealability failure of memory cards after hot press and increases the yield of memory card manufacturing.
Patent TW-I274846-B (TW)
Title: Centering device, in particular for a tracer-type measuring instrument
Inventor: HAIMER FRANZ
IPC: G01B5/012
Filed: 2003-11-26
Granted: 2007-03-01
Abstract: A centering device, in particular for a tracer-type measuring instrument (1), is proposed. The centering device comprises an instrument carrier (3) defining an instrument axis (7), a carrying shank (41) defining a shank axis (43) and a centering holder (45) holding the instrument carrier (3), with the instrument axis (7) parallel to the shank axis (43), radially movably to the latter, but so as to be capable of being fixed to the carrying shank (41). The centering holder (45) is designed as a parallelogram guide with a parallelogram-link region (59), or a plurality of these regions, distributed about the shank axis (43) and the instrument axis (47) and extending along these axes (7, 43). Such a parallelogram guide may be integrally formed in one piece on the carrying shank (41) and/or on the instrument carrier (3), thus reducing the outlay in terms of production. Setscrews (69) distributed on the circumference of the parallelogram guide make it possible to adjust the shank axis (43) in relation to the instrument axis (7).
Patent TW-I269557-B (TW)
Title: System and method for improved synchronization between a server and a client
Inventor: WARREN JOSEPH R
IPC: H04L12/56
Filed: 2003-12-18
Granted: 2006-12-21
Abstract: A system and method for improved client and server communications, more particularly, an improved protocol that may be used for communication between a client and a server, such as in an email environment. Many features are provided for improved communications. An email server may provide the best message body available for an email message, may transfer an entire data object if requested property or properties are not well defined within the data object, may provide progress data for use in tracking download progress, and may send error information for a data object having an error. Email changes may be optimized at an email server component, even if the email changes occurred at another email server component. An email server may maintain a table of changes that occur to folders at an associated data store, and may notify a subscribed email client component of changes that occur in the table.
Patent TW-I263732-B (TW)
Title: Improved structure for a concealed screen window
Inventor: HUANG KUEN-JR
IPC: E06B1/12
Filed: 2003-12-20
Granted: 2006-10-11
Abstract: This invention relates to an improved structure for a concealed screen window, including: a window frame constructed to a top and a bottom lateral frames and two side vertical frames, the window frame provided therein with at least plural frame rails (or grooves) for embedding an inner and an outer casement and a screen window casement, wherein the inner, outer casements and screen window casement are each mounted in independent rails (or grooves), and the screen window casement is provided therein with foldable screen window components. As such, the screen window can be neatly folded, closed or expanded within the screen window casement, to allow positioning at any desired position, to be folded for concealment, or to prevent entry of insects and dust.
Patent TW-I290066-B (TW)
Title: Ejection device of ejecting gas-liquid mixed flow
Inventor: HARA SHINICHI
IPC: B08B3/02
Filed: 2004-01-02
Granted: 2007-11-21
Abstract: In an ejection device of gas-liquid mixed flow, a liquid nozzle portion for ejecting a flat liquid ejection flow is arranged, and a flat flow passage is arranged on the downstream side. Further, a first gas suction port for making gas flow into a periphery of an ejection port of the liquid nozzle portion by negative pressure generated by the liquid ejection flow is arranged, and furthermore a second gas suction port located on the downstream side of the first gas suction port outside a sector-shaped ejection flow formed by the liquid ejection flow is arranged. In this way, a gas accompanying flow is made to flow between the sector-shaped ejection flow and each inner face of a sector-shaped portion composing the flow passage.
Patent TW-I268467-B (TW)
Title: Image display panel and image display device
Inventor: KOBAYASHI HIROSHI
IPC: G09G3/36
Filed: 2004-01-15
Granted: 2006-12-11
Abstract: To prevent a vertical stripe pattern on a display screen of an image display device and an image display panel of narrow pulse driving, there is provided an image display panel and image display device comprising a pixel portion arranged with pixels in matrix, a drive circuit connected respectively to each data line shared by pixels in each column of the pixel portion for controlling supplying of a video signal to be input to the data line based on a plurality of clocks to be input, a plurality of input pads for inputting a plurality of clocks, and a clock input circuit, wherein resistance of wiring from the plurality of input pads to the clock input circuits is made to be approximately the same between the plurality of clocks.
Patent TW-I323890-B (TW)
Title: Mram architecture for low power consumption and high selectivity
Inventor: LE PHAN KIM
IPC: G11C11/16
Filed: 2004-01-28
Granted: 2010-04-21
Abstract: The present invention provides a magnetoresistive memory cell ( 30 ), comprising a magnetoresistive memory element ( 31 ), a first current line ( 32 ) and a second current line ( 33 ), the first and the second current line ( 32, 33 ) crossing each other at a cross-point region but not being in direct contact. According to the invention, a bridging element( 34 ) connects the first and second current lines ( 32, 33 ) in the vicinity of the cross-point region. The bridging element ( 34 ) is magnetically couplable to the magnetoresistive memory element ( 31 ). An advantage of the MRAM architecture according to the present invention is that it allows lower power consumption than prior art devices and high selectivity during writing. The present invention also provides a method of writing a value in a matrix of magnetoresistive memory cells ( 30 ) according to the present invention, and a method of manufacturing such magnetoresistive memory cells ( 30 ).
Patent TW-I261565-B (TW)
Title: Running gear of saddle-riding-type vehicle
Inventor: SUZUKI HIROMI
IPC: B62M7/02
Filed: 2004-02-12
Granted: 2006-09-11
Abstract: To reduce size and weight of a support unit for making a running gear unit support an exhaust pipe and ease the assembly of the exhaust pipe to the running gear unit by the support unit. A running gear 7 includes: a running gear unit 11 with an engine 13, which is pivotally supported to a vehicle body 2 to freely swing; an exhaust pipe 20 extending towards the rear from the engine 13; and a support unit 22 for making the running gear unit 11 support a midway section 21 of the exhaust pipe 20 in the longitudinal direction. The support unit 22 includes: a first bracket 28 provided on the running gear unit 11; a second bracket 30 provided on the midway section 21 of the exhaust pipe 20; and a pair of engaging members 31 and 31 vertically arranged for engaging a rear end part of the first bracket 28 and the front end part of the second bracket 30 with each other on a given relative position in the fore-and-aft direction.
Patent TW-I238331-B (TW)
Title: Molding information printing system
Inventor: SAITO OSAMU
IPC: B29C39/44
Filed: 2004-03-02
Granted: 2005-08-21
Abstract: A molding information printing system, including a network; a molding machine connected to the network; a printer for printing the molding information of the molding machine; a print control section connected to the network independently of the molding machine, for controlling the printer for printing of the molding information; and an instructing section for instructing printing of the molding information and transferring a command to the print control section through the network. The molding machine includes a control unit connected to the network, and the instructing section is provided in the control unit. Also, the system includes a computer connected to the network independently of the molding machine, and the print control section is provided in the computer.
Patent TW-I247482-B (TW)
Title: Level converting circuit efficiently increasing an amplitude of a small-amplitude signal
Inventor: TOBITA YOUICHI
IPC: H03K19/017
Filed: 2004-04-30
Granted: 2006-01-11
Abstract: A gate of an N-channel MOS transistor driving an output node is driven through a capacitance element in accordance with an input signal. A voltage on a source node of the drive transistor is applied as an output signal to an output node. Consequently, it is possible to perform level conversion of a voltage at a low level of the input signal having a higher voltage than the source node voltage of the drive transistor. It is thus possible to achieve a level converting circuit that can reduce the number of manufacturing steps, and can perform the level conversion of any logical level of the input signal.
Patent TW-I284453-B (TW)
Title: Propagation delay compensation for improving the linearity and maximum frequency of tunable oscillators
Inventor: GONG XIAOWU
IPC: H03K3/0231
Filed: 2004-05-18
Granted: 2007-07-21
Abstract: The present invention uses a variable reference voltage to compensate for propagation delay in a tunable oscillator caused by delays in the electronic components. The reference voltage is decreased as the control current increases and is varied in frequency to match the phase of the oscillator.
Patent TW-I237705-B (TW)
Title: Color filter for LCD
Inventor: USHIMARU AKIRA
IPC: G02B1/10
Filed: 2004-07-29
Granted: 2005-08-11
Abstract: The purpose of the present invention is to provide a color filter for LCD whose natural color reproduction has a wide range of color reproduction regions. A color filter for LCD is produced by forming pixels of plural colors on a substrate, wherein the plural colors consists of red (R), green(G), blue(B) and cyan(C) colors and in the CIE chromaticity chart of the pixels, the CIE standard values are in the following ranges: red (R): X=0.50-0.70, Y=0.28-0.36; green (G): X=0.20-0.33, Y=0.50-0.73; blue (B): X=0.13-0.17, Y=0.04-0.11; cyan (C): X=0.08-0.20, Y=0.25-0.70.
Patent TW-I244794-B (TW)
Title: Water treatment device for fuel cell system
Inventor: YOU CHEN-YU
IPC: H01M8/02
Filed: 2004-10-13
Granted: 2005-12-01
Abstract: A water treatment device for fuel cell system is disclosed. The fuel cell system generates liquid water and heat. The water treatment device includes a recycling tank communicating with the fuel cell system and having plural vents and a receiving space for recycling the water generated by the fuel cell system, an absorbent material disposed in the receiving space of the recycling tank for absorbing and spreading the liquid water, and a blower communicating with the recycling tank for introducing the external air into the recycling tank. The heat generated from the fuel cell system vaporizes the liquid water into gaseous water and the air introduced by the blower can drain the gaseous water away the recycling tank via the vents.