baber/WOPTO huggingface dataset:
Patent JP-H0381945-A (JP)
Title: Ion mass spectrometer
Inventor: OKAFUJI SHINICHI
IPC: H01J37/05
Filed: 1989-08-25
Abstract: PURPOSE:To enhance the reliability in mass spectrometry to a great extent by checking whether there is offsetting in the specified relationship between the output of a mag. flux density sensing means as reference for mass spectrometry and the mass number of ions to be analyzed, to be performed prior to mass spectrometry, and by performing a specified processing. CONSTITUTION:Prior to the ion implanting process, it shall be checked whether there is any error in the specified relationship between the output of a Hall element 15 as reference for mass spectrometry of ions and the mass number M of the ions to be analyzed. The mass number M of the ions analyzed is expressed as M=(K.B<2>)/VEX, where K is constant, VEX is drawout voltage, and B is mag. flux density sensed by the Hall element 15. Certain implantation into the desired ion target 7 can be made with the ion implanting process to be executed after this checking.
Patent JP-H1074658-A (JP)
Title: Manufacture of spin valve magnetoresistive effect device
Inventor: IZEKI TAKAYUKI
IPC: H01F41/18
Filed: 1996-07-31
Abstract: PROBLEM TO BE SOLVED: To provide a spin valve magnetoresistive effect device in which the magnetizing direction of a ferromagnetic fixed layer is easily changed by performing a heat treatment at Curie temperature or higher of a ferromagnetic free layer or at least the blocking temperature of an antiferromagnetic layer while applying a magnetic field in an orthogonal direction to the magnetizing direction of the ferromagnetic free layer and after that performing a cooling operation. SOLUTION: A reciprocating movement of a substrate 2 is started in the orthogonal direction to direction F1 of a magnetic field formed by first and second magnets. A ferromagnetic free layer 4 is laminated on the substrate 2, and after that, a spacer layer 5 is laminated. Subsequently, the reciprocating movement of the substrate 2 is stopped and a ferromagnetic fixed layer 6 and an antiferromagnetic layer 7 are sequentially laminated. The substrate 2 is arranged so that the direction F1 of the magnetic field formed by a first magnetic 12c having the N pole and a second magnet 13c having the S pole which are arranged so as to face each other orthogonally crosses a magnetizing direction 9 of the ferromagnetic free layer 4. A heat treatment is performed at least the blocking temperature of the antiferromagnetic layer 7, and self-cooling is executed.
Patent JP-2001038832-A (JP)
Title: Honeycomb structure and its production
Inventor: ISHIDA SHINTARO
IPC: B64C1/00
Filed: 1999-08-03
Abstract: PROBLEM TO BE SOLVED: To make light and wind collide with a wall surface and to be applicable to purposes such as a light shielding body by a method in which in a honeycomb structure produced by a extension method, each ridgeline forming each hexagonal space is formed to be inclined by a specified angle from the perpendicular direction to the upper and lower surfaces of the structure. SOLUTION: In the production of a honeycomb structure to be used in a main part of a panel material, the adhesive application part 51 of an adhesive application roller 5 arranged on a raw material sheet 4 is formed spirally, and when an adhesive is applied in the shape of a stripe on the sheet 4, the stripe 6 to be formed is made to be non-parallel and non-vertical to the feed direction of the sheet 4. In the structure 1, each ridgeline forming each hexagonal column-shaped space 8 is set up to be inclined by 20-70 degree from the perpendicular direction of the upper and lower surfaces of the structure 1. A laminate with the adhesive cured is cut perpendicularly to the stripe 6 direction, and each cut laminate is extended to complete the structure 1.
Patent JP-H04101462-A (JP)
Title: Semiconductor device and its manufacture
Inventor: MOMOSE HISAYO
IPC: H01L29/78
Filed: 1990-08-21
Abstract: PURPOSE:To enable micronization and improve reliability by forming a film transistor inside the semiconductor film formed on an insulating film, making use of BTB phenomena. CONSTITUTION:A source region 17, which consists of the semiconductor of one conductivity type, and a drain region 18, which is formed to contact with the source region and consists of the second semiconductor of the conductivity type different from this, are formed inside the semiconductor film 20 formed at the surface of a semiconductor substrate, and a gate 15 is formed on the junction face formed between these source region and drain region, and by the current application to this gate, the current, which flows between the source and the drain, is controlled. It is to be desired that the source and drain regions 17 and 18 should be constituted of an n-type silicon layer and a p-type silicon layer. Since a BTT element is constituted of a film transistor in this way, the electric isolation from the substrate becomes needless, and the area required for well formation, etc., can be reduced, drastic micronization of the element can be realized.
Patent JP-2001045879-A (JP)
Title: Method for liquid mulching and material for liquid mulching
Inventor: NAKAGAWA KOICHI
IPC: A01G13/00
Filed: 1999-08-03
Abstract: PROBLEM TO BE SOLVED: To provide a method for liquid mulching to form a mulch film capable of being easily laid, excellent in moisture maintaining, water permeable and moisture permeable functions without flown out by rain water and the like and capable of being naturally decomposed after use and requiring no recovery and provide a liquid mulching material used for the same. SOLUTION: This method for liquid mulching is to spray a resin emulsion in which plant fibers are dispersed or spray a water dispersion of the plant fibers and subsequently spray the resin emulsion. This liquid mulching material is provided by dispersing plant fibers in an bituminous emulsion or a high molecular emulsion.
Patent JP-H0270307-A (JP)
Title: Roll stand for three way rolling
Inventor: SASAMOTO YOSHIYUKI
IPC: B21B13/10
Filed: 1988-09-01
Abstract: PURPOSE:To bring roll draft adjusting amounts to be large by supporting a supporting intermediate shaft of an intermediate gear by a 1st arm freely rockable around to center the rotation shaft of a rolling roll and a 2nd arm freely rockable around to center the rotation shaft of a driving side gear. CONSTITUTION:When a rotation shaft is shifted in a radial direction for position adjustment of a rolling roll 2 in a radial direction, a follwer side gear 14 is shifted in a radial direction and a distance between the rotation centers of the gear 14 and a driving side gear 16 is changed. An intermediate gear 15 is shifted in a radial direction by change of the above center-to-center distance. That is, meshing condition of the gear 15 with the gears 14 and 16 is kept to properly transmit a rotating power in a constant condition even if the rotation shaft is shifted in a radial direction.
Patent JP-S6464383-A (JP)
Title: Magnetoresistance effect element
Inventor: TANABE HIDEO
IPC: G11B5/39
Filed: 1987-09-04
Abstract: PURPOSE:To increase a regeneration output and to reduce an irregularity in an electromagnetic characteristic by a method wherein a multilayer thin-film body where an N-Fe alloy thin film and a Co metal or a Co alloy thin film are laminated alternately is used as a ferromagnetic thin-film body. CONSTITUTION:An insulating layer 2 composed of an Al2O3 film or an SiO2 film is laminated on a substrate 1 composed of a magnetic substance such as an Ni-Zn ferrite; in addition, an 81wt.% Ni-Fe alloy thin fill 3 and a Co metal thin film 4 are laminated alternately on it to amount to four layers. A film thickness of the Ni-Fe alloy thin film 3 and the Co metal thin film 4 is within a range of 1-50nm; it is sufficient to laminate two or more layers in such a way that a total film thickness amounts to 20-100nm. After a multilayer thin film body has been manufactured in this manner, the multilayer thin film body is etched to be a rectangular pattern 5 of a prescribed size; lastly, conductors 6 composed of Ti, Al or the like are formed on both end parts 7, 8 of the rectangular pattern 5; a magnetoresistance effect element 9 is manufactured.
Patent JP-H06165691-A (JP)
Title: Producing protease inhibitor
Inventor: YUTSUTA HAIMU
IPC: C12R/
Filed: 1993-09-03
Abstract: PURPOSE: To provide a new process for the production of recombinant desulphatohirudin by using a transformed yeast strain.  
     CONSTITUTION: This process uses an expression cassette containing a CUP 1 promoter of a yeast. This invention further relates to a transformed yeast strain, a new expression vector and their production process. 
     COPYRIGHT: (C)1994,JPO
Patent JP-H0666589-A (JP)
Title: Navigation apparatus for vehicle
Inventor: NANBA AKEMASA
IPC: G08G1/0969
Filed: 1992-08-19
Abstract: PURPOSE:To obtain a navigation apparatus for a vehicle which can correctly conduct route guide at an intersection by a driver even if a position detection error occurs. CONSTITUTION:A route guide unit 26 superposes present own vehicle position.advancing direction and a route stored in a route memory 24, and displays them on a display unit 28. The unit 28 is provided in an instrument panel near a cab seat. The driver confirms a position of the own vehicle by observing the display, and obtains information regarding following route. When a residual distance to an intersection is short and the fact that the intersection is not yet passed is decided, i.e., the vehicle is disposed immediately before the intersection, an intersection diagram present position display controller 26a forms a present position mark at a central position of the intersection, and remains fixed until the intersection is actually passed.
Patent JP-H1028900-A (JP)
Title: Shower head instrument fitted with push button opening and closing valve
Inventor: TAKAHASHI MASASHI
IPC: A47K3/28
Filed: 1996-07-18
Abstract: PROBLEM TO BE SOLVED: To provide a shower head instrument fitted with a push button opening and closing valve constituted so as to perform the opening and closing operation of hot water on this side of a shower head used in a shower in a bathroom. SOLUTION: Dams 11 having opening parts 12 formed thereto are arranged on both sides of the inflow water part of a shower head, and push buttons 7 are fixed on both sides of the opening and closing valve 6 to be inserted in the gap between the dams 11. The push buttons 7 are pushed by push caps 1, 8 and O-rings 2, 8, and a valve press pin 3 is fixed by a spring 4 and a rivet 5 in order to prevent the rotation of the opening and closing valve 6. At a time of use, the shower head is held by a single hand and the push buttons are operated by a finger.
Patent JP-S6199899-A (JP)
Inventor: SHIRAKI TOMOMI
IPC: B08B9/023
Filed: 1984-10-22
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0383111-A (JP)
Title: Pulser power source
Inventor: IBA TAKASHI
IPC: G05F1/56
Filed: 1989-08-28
Abstract: PURPOSE:To quickly change the amplification of a generated pulse by providing a control transistor TR and an error amplifying circuit and connecting a constant voltage power supply part, which outputs a supply voltage corresponding to a set reference voltage, in parallel to a pulse generating circuit to constitute a fast voltage variable pulser power source. CONSTITUTION:Error amplifying circuits A1 and A2 detect the output voltage and control control transistors Q1 and Q2 in accordance with error between the output voltage and a set reference voltage to stabilize the output voltage. They are connected in series between a pulse generating circuit 2 and an input power source to change the supply voltage to the pulse generating circuit 2. Thus, the supply voltage quickly falls in accordance with the change of the set reference voltage, and for example, the supply voltage is changed in every scanning line at the time of using an ultrasonic diagnostic device.
Patent JP-H1153994-A (JP)
Title: Operation device and grip for the same
Inventor: OIKAWA AKITOSHI
IPC: A63F13/24
Filed: 1997-07-31
Abstract: PROBLEM TO BE SOLVED: To provide an operation device which is easy to be held by any per son, by fitting various sizes of grips so as to match the size of basic operation device, regardless of the size of hands from adults to children. SOLUTION: At both ends 7, 8 for arranging both the hands of an operation device 1, in which an operator operates by holding with both hands, an operation switch has engaging holes 8a formed on this side of the both ends 7, 8 grips for the operation device 9, 10 closely about to both the ends 6, 8 of the operation device 1, where the operator holds with both hands and arrange both hands to operate, and has engaging parts 12 for engaging with the engaging holes 8a on the surface 11 along both the end parts 7, 8, and both the end parts 7, 8 are extended to the foreground.
Patent JP-H0964146-A (JP)
Title: Semiconductor production system and clean room
Inventor: OMI TADAHIRO
IPC: H01L21/677
Filed: 1995-08-29
Abstract: PROBLEM TO BE SOLVED: To arrange a room-temperature washer and a semiconductor production device adjacently, and to shorten a substrate transport distance most by reducing the usage and discharge of chemicals and ultrahigh pure water and establishing a washing method, in which the generation of chemical vapor is inhibited. SOLUTION: Washing by ultrahigh pure water containing ozone is conducted, and washing is performed while applying ultrasonic vibrations having frequency from 500kHz to 5MHz by using an HF/H2 O2 /H2 O/surface-active agent solution. Washing by ultrahigh pure water is carried out, chemicals containing a surface- active agent are removed from a substrate surface, a formed oxide film is removed, and the substrate surface is treated with diluted hydrofluoric acid, in which hydrogen is terminated. Rinsing is conducted by ultrahigh pure water. Consequently, the usage and discharge of chemicals and ultrahigh pure water can be reduced, and the generation of chemical vapor can be inhibited. Accordingly, a room-temperature washer 102 for a semiconductor substrate and a semiconductor production device 103 are arranged adjacently, and a substrate transport distance can be most shortened.
Patent JP-H04106256-A (JP)
Title: Steel pipe concrete column
Inventor: INOUE SUETOMI
IPC: E04C3/293
Filed: 1990-08-24
Abstract: PURPOSE:To improve adhesion of steel to concrete by arranging four pi-shaped steels with the ribs of the pi-shaped steels set inside and in the longitudinal direction, and by filling up a steel pipe column having the flange end sections of the pi-shaped steels welded to with the concrete. CONSTITUTION:The end sections of the flanges 5 of four pi-shaped steels 3 with the ribs 4 of the pi-shaped steels 3 set inside and in the longitudinal direction, are welded, and a box type steel pipe column 1 is formed. Then, on the internal surfaces of the flanges 5 on the sides of fitting the ribs 4 of the pi-shaped steels 3 or on surfaces between the internal surfaces of the flanges 5 and the ribs 4, projections of rectangular cross-section are arranged. After that, on the ribs 4 of the respective pi-shaped steels 3, a plurality of holes 7 are arranged, and reinforcing bars 8 are inserted into the holes 7, and the column 1 is filled up with concrete 9. As a result, the columnar rigidity of the steel pipe column can be improved.
Patent JP-S6376422-A (JP)
Title: Manufacture of semiconductor device by ion inplantation
Inventor: HANIWARA KOJI
IPC: H01L21/265
Filed: 1986-09-19
Abstract: PURPOSE:To prevent a space between a pair of ion implanted regions which have a region under a mask between themselves from being narrowed too much and obtained a required necessary dielectric strength by a method wherein ions are implanted obliquely from the above side of the mask toward a wafer and implanted in more then two steps from the surface layer part of the deep layer part of the wafer. CONSTITUTION:Ions are implanted from the above of a mask 2 toward a wafer obliquely with an angle of more than 9 degrees from a vertical line and implanted in more than two steps from the surface layer part to the deep layer part and, moreover, the deeper the implanted layer part, the higher the ion implantation energy. For instance, a silicon wafer is covered with 1st mask 2a and ions are implanted vertically into the surface layer parts of the wafer on both the sides of the mask 2a with a low energy E1. Then the part of the wafer on one side of the 1st mask 2a is covered with 2nd mask 2b and ions are implanted obliquely with an intermediate energy E2. In the same way, the part of the wafer on the other side of the 1st mask 2a is covered with 3rd mask 2c and ions are implanted obliquely with the energy E2. Finally, in the same way as the ion implantation into the intermediate layer parts, ions are implanted into the deep layer parts of the wafer 1 with an implantation energy E3 (E3>E2>E1).
Patent JP-S6280657-A (JP)
Title: Gas jetting device for correcting white defect of mask
Inventor: SATO MITSUYOSHI
IPC: G03F1/72
Filed: 1985-10-04
Abstract: PURPOSE:To improve response and reproducibility by shortening the distance between an exit port in the front end of a nozzle and a valve body and controlling digitally the flow rate of glass by the valve body. CONSTITUTION:Plural apertures 20 are provided along the outside peripheral surface of a valve body 13 and are different in diameter, and a motor 24 is attached to the other end of the valve body 13 to rotate the valve body 13. If the valve body 13 is rotated to allow one of plural apertures 20 to face a connection tube 19, gas stored in a gas reservoir 14 of the valve body 13 is led to an empty chamber 17 of the nozzle through the communicating tube 19 facing said aperture and is jetted from an exit port 12. Since the route from the gas reservoir 14 to the exit port 12 is very short, the response of gas jetting is very good. Diameters of apertures 20 are selected properly to adjust digitally the quantity of jet. Thus, the reproducibility is improved.
Patent JP-S6281806-A (JP)
Title: Amplitude limit circuit
Inventor: KANENO KENJI
IPC: H03K12/00
Filed: 1985-10-04
Abstract: PURPOSE:To avoid the phase fluctuation due to the minority carrier storage time by applying amplitude limit to the negative amplitude of an input signal by the cut-off characteristic of the 1st transistor (Tr) and to the positive amplitude by the cut-off characteristic of the 2nd Tr. CONSTITUTION:A Tr 1 is operated in the active region to the positive amplitude of the input signal inputted via a coupling capacitor 6 to apply linear amplification. When the input signal reaches a level of the negative amplitude, since the Tr 1 is biased to be cut off, amplitude limit is given to a load resistor 5 for a prescribed positive level or over. The 2nd Tr 7 is operated in the active region to the positive amplitude and the positive amplitude appears at the load resistor 8 as it is. On the other hand, since the Tr is biased to be cut off by the negative amplitude when it reaches a certain level or below, the negative level is subjected to amplitude limit.
Patent JP-2001051843-A (JP)
Title: Microcomputer device
Inventor: SHIBATA YUKITOSHI
IPC: G06F15/78
Filed: 1999-08-04
Abstract: PROBLEM TO BE SOLVED: To provide a microcomputer device which can easily rewrite an application program and reduce the total cost without sacrificing the versatility of a microcomputer. SOLUTION: A rewriting program which controls the rewriting of an application program to an application program storage block A4 of a flash ROM 2 is stored in both a ROM(unwritable read-only memory) and the flash ROM 2. Namely, unmodified parts of the writing program are stored in the ROM and only parts of it which are possibly modified are stored in the flash ROM 2.
Patent JP-H0888381-A (JP)
Title: Manufacture of semiconductor electrode
Inventor: HANABUSA AKIRA
IPC: H01L21/28
Filed: 1994-09-16
Abstract: PURPOSE: To provide satisfactory adhesion strength between a CdS film and a metallic film by reducing a CdS surface chemically and by forming a metallic member thereon thereafter. CONSTITUTION: A CdS film 2 is formed on a glass substrate 1 as a CdS substrate used for joining a metallic member. Before a Cd film 4 is formed on the CdS film 2, the CdS film 2 is immersed in hydrazine solution in advance and a surface of the CdS film 2 is chemically reduced and a surface layer 3 is formed. Thereafter, it is cleaned in deoxidation ion exchange water and the one which is further cleaned by acetone is dried in inert atmosphere. The Cd film 4 is formed in a substrate obtained in this way by a resistance heating vacuum vapor deposition device and a CdS semiconductor electrode is prepared. Thereby, a CdS semiconductor electrode with enough adhesion strength can be produced between a semiconductor material and a metallic material.
Patent JP-H0385310-A (JP)
Title: Lubricating device for internal combustion engine
Inventor: ARIFUKU TAKATOMO
IPC: F01M1/02
Filed: 1989-08-30
Abstract: PURPOSE:To make an engine compact and improve the relability by providing a scavenging pump and a pressure pump in bilateral symmetry of a crank shaft in a crank case, and driving them respectively with the crank shaft through gears. CONSTITUTION:A scavenging pump 2 for force-feeding the lubricating oil in a crank case 1 to an oil tank and a pressure pump 3 for force-feeding the lubricating oil tank and a pressure pump 3 for force-feed the lubricating oil in the oil in the oil tank to each lubricating part in an engine are provided in bilateral symmetry of a crank shaft 4 in the crank case 1. Each driving gear 7, 8 is respectively fitted to each rotary driving shaft 5, 6 of each pump 2, 3, and while each driving gear 7, 8 and a crank gear 9 fitted to the end of the crank shaft 4 are engaged with each other through each idle gear 10, 11. Overall width of an engine is thereby reduced to make the whole of the engine compact, and while each pump 2, 3 is formed to be driven by gears to improve the durability and the reliability.
Patent JP-H1037724-A (JP)
Title: Energy saving rotary shaft valve mechanism for internal combustion engine
Inventor: NAKAMURA HIROSHI
IPC: F01L7/02
Filed: 1996-07-19
Abstract: PROBLEM TO BE SOLVED: To reduce a large amount of pumping loss. SOLUTION: In order to obtain satisfactory fuel consumption performance in the presently available internal combustion engine, a valve spring should be weakened. In order to obtain high performance, the valve spring should be strengthened to prevent occurrence of surging of the valve due to necessity of high speed rotation. In order to solve such conflicting problems, stepped and continuous variable valve timing mechanisms are developed. Pumping loss, however, still remains. An intake rotary shaft valve 12 and an exhaust rotary shaft valve 13 are arranged instead of the valve and valve spring. Pumping loss is thus remarkably reduced. Environment is kept clean due to due consumption performance, while an engine weight is reduced. The number of part items is also reduced. In addition, the center of gravity of the engine is lower because total height of the engine is reduced.  Total width of the engine is also reduced.
Patent JP-S6385390-A (JP)
Inventor: BURUUSU KAMENZU
IPC: G04C3/00
Filed: 1986-09-19
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H1168098-A (JP)
Title: Manufacture of mos field effect transistor
Inventor: HISAWA KAZUYA
IPC: H01L21/28
Filed: 1997-08-18
Abstract: PROBLEM TO BE SOLVED: To avoid damaging the surface of a gate electrode. SOLUTION: This manufacturing method has formed on a substrate 10 an island-like preliminary gate electrode pattern composed of a gate oxide film 24, gate electrode 22 and mask pattern for forming the gate electrode laminated one above another, forming sidewalls 26 on the sides faces 25a, 25b of this electrode pattern, wet etching to remove the mask pattern 20, over-etching the sidewalls to expose the top end 22a of the gate electrode like a protrusion between the remaining sidewalls.
Patent JP-S6377675-A (JP)
Inventor: TOYODA KENICHI
IPC: B25J9/06
Filed: 1986-09-22
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。