Patent SG-11201900319P-A (SG)
Title: Compositions and methods using same for carbon doped silicon containing films
Inventor: CHANDRA HARIPIN
IPC: H01L21/02
Filed: 2017-07-26
Abstract: TCDSBc.. 1) 40 0 ,c) 30 ci) 20 C — 4 - - ----------- HCDSP (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 01 February 2018 (01.02.2018) WIPO I PCT (51) International Patent Classification: C23C 16/34 (2006.01) C23C 16/40 (2006.01) C23C 16/36 (2006.01) H01L 21/02 (2006.01) C23C 16/455 (2006.01) (21) International Application Number: PCT/US2017/043890 (22) International Filing Date: 26 July 2017 (26.07.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/367,260 27 July 2016 (27.07.2016) US 15/654,426 19 July 2017 (19.07.2017) US (71) Applicant: VERSUM MATERIALS US, LLC [US/US]; 8555 S. River Parkway, Tempe, AZ 85284 (US). (72) Inventors: CHANDRA, Haripin; 1702 Thorley Way, San Marcos, CA 92078 (US). LEI, Xinjian; 1928 Cherry- wood Street, Vista, CA 92081 (US). MALLIKARJU- NAN, Anupama; 1640 Windemere Drive, San Marcos, CA 92078 (US). KIM, Moo-Sung; 119 Booljung-Ro, Apart- ment 805-1404, Boondang-Gu, Sungnam, Gyunggi-Do, 13602 (KR). (74) Agent: ROSSI, Joseph, D. et al.; Stradley Ronon Stevens & Young, LLP, 30 Valley Stream Parkway, Great Valley Corporate Center, Malvern, PA 19355 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, — (54) Title: COMPOSITIONS AND METHODS USING SAME FOR CARBON DOPED SILICON CONTAINING FILMS 50 onion °nolo omolom How m11°111E11 ow (10) International Publication Number WO 2018/022719 Al 0 200 300 Etch time (s) FIG. 1 0 100 400 500 1-1 (57) : A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, © compositions and methods for depositing a low dielectric constant (< 4.0) and high oxygen ash resistance silicon-containing film such O as, without limitation, a carbon doped silicon oxide, are disclosed. [Continued on next page] WO 2018/022719 Al MIDEDIMOMMIDIRERIONEHOINIDOMMOVOIMIE TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))