baber/WOPTO huggingface dataset:
Patent JP-H01302802-A (JP)
Title: Printed resistor
Inventor: TOGAWA TOSHIFUMI
IPC: H01C17/24
Filed: 1988-05-31
Abstract: PURPOSE:To grasp the start position of a trimming of a resistor more accurately than in the prior art and make it possible to improve workability by providing an insulator capable of discriminating between an irradiated portion and a non-irradiated portion, adjacent to a resistor through irradiation with laser beams. CONSTITUTION:This device includes a resistor 11 formed by printing, conductors 13, 14 which partially overlap the resistor 11 along the end thereof and provided facing each other, and an insulator 15 provided in a region between these conductors 13, 14 and capable of discriminating between an irradiated portion and nonirradiated portion through irradiation with laser beams. For example, the resistor 11 is formed by printing on a white insulation substrate 12 made of alumina, and on one end thereof are provided the two conductors 13, 14 which overlap the resistor 11 partially. Further, a brown insulation paste layer 15 as an insulator is formed in contact with the resistor 11 in a portion of the region between the conductors 13, 14 or in vicinity of the region.
Patent JP-S63106917-A (JP)
Title: Magnetic recording medium
Inventor: KURIKAWA AKINORI
IPC: G11B5/66
Filed: 1987-05-28
Abstract: PURPOSE:To permit formation of a magnetic recording medium having good coercive force and MrT by providing an underlying layer between a nonmagnetic base and magnetic layer and forming the magnetic layer of cobalt, nickel, chromium, and platinum. CONSTITUTION:The magnetic layer 3 is provided on the nonmagnetic base 1 and the underlying layer 2 is provided between the nonmagnetic base 1 and the magnetic layer 3. The magnetic layer 3 consists of the cobalt, nickel, chromium, and platinum and contains 1-43atom% platinum. For example, the film thickness of the underlying layer 2 is >=500Angstrom  and the film thickness of the magnetic layer 3 is 400-1,000Angstrom . The underlying layer 2 is constituted of a nonmagnetic material such as chromium, molybdenum, titanium or tantalum. The medium having the good coercive force (Hc) and the product MrT of the residual magnetization (Mr) and the film thickness T of the magnetic layer is thereby obtd.
Patent JP-S5923677-A (JP)
Title: Image pickup element
Inventor: SAKURAI SATORU
IPC: H01L27/14
Filed: 1982-07-29
Abstract: PURPOSE:To simplify the electrode structure, facilitate manufacture of the element, and eliminate spike noise by providing the first and second electrodes on the first and second thin films made of pyroelectric material and photoconductive body, and receiving incident light by the first electrode and receiving scanning light for picture reading by the second electrode. CONSTITUTION:The first thin film 1 made of pyroelectric material and the second thin film 2 made of photoconductive body laminated on the first thin film 1 are provided. The first electrode 3 is formed on the thin film 1 on the opposite side of the face on which the thin film 2 is laminated, and the second electrode 4 is formed on the opposite face of laminated face of the film 2. A resistance 6 is connected between the first and second electrodes 3, 4. Incident light is received by an absorption film 5 formed on the first electrode 3, and scanning light for picture reading is received by the second electrode 4. Thus, electrode structure of the image pickup element is made simple allowing production without using hih-grade manufacturing technique. The output processing circuit is simplified and spike noise is eliminated.
Patent JP-S61290888-A (JP)
Title: Image information converting method
Inventor: TANAKA KAZUHIKO
IPC: H04N7/173
Filed: 1985-06-19
Abstract: PURPOSE:To obtain an image of a good finish, which is free from disconnection and deterioration of a contour line after a conversion, by executing a processing for thickening a width of the border line with regard to a coloring unit block having an outline color and using colors of (n)+1 colors or more, and thereafter, executing a processing for limiting a color number in the coloring unit block to (n) colors. CONSTITUTION:Image information is inputted, and a color number is limited by performing a color number processing, but in case it is used for a CAPTAIN system, it is converted to an image which is limited to 16 colors in this system. Subsequently, an outline color is inputted, and thereafter, the image is divided into each coloring unit block. In case this method is used for the CAPTAIN system, a division by which 4X4=16 picture elements becomes one coloring unit block is executed, and a processing of said every coloring unit block is executed. In case it is used for the CAPTAIN system, the color number in one coloring unit block is limited to two colors. In the end, standard conversion is executed.
Patent JP-S5358247-A (JP)
Title: Fixing device for copier
Inventor: YANAGAWA NOBUYUKI
IPC: G03G15/20
Filed: 1976-11-05
Abstract: PURPOSE: To enhance the efficiency of fixing and obtain a device which can exhaust in a quick and smooth manner at the anomaly in the electrophotographic copier by heating the plane or which a toner image is formed at high temperature with a rediating system and heating its reverse plane at low temperature with a convection system, respectively. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S5560388-A (JP)
Title: Color television receiver
Inventor: ISONO KATSUO
IPC: H04N9/24
Filed: 1978-10-30
Abstract: PURPOSE: To standardize a circuit substrate and also to improve various characteristics by deriving an invariably-constant intermediate frequency even if an index frequency would vary due to a static or dynamic variation factor.  
     CONSTITUTION: Tuner part 10 consists of photo detector 11, mixer 12, local oscillator 13, and local-oscillation-frequency setting variable resistor 14. Intermediate frequency part 20 consists of intermediate-frequency band-pass filter 21, limiter amplifier 22, FM detector 23, and low-pass filter 24. Then, index frequency (f i ) from detector 11 and local oscillation frequency (fl) from oscillator 13 are mixed by mixer 12 to obtain intermediate frequency (fI), which is supplied to intermediate frequency part 20, and after filter 21 removes a signal component of an unneeded frequency and limiter amplifier 22 suppresses an AM component, only a signal component of (fI) is supplied to mixer 30. Here, (fI) and (fl) are mixed and to its output side, a frequency equal to frequency (f i ) from the detector is derived. Further, filter 24 sends its output to a polarizing method for scanning-rate modulation. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S62289279-A (JP)
Title: Formation of film
Inventor: ICHIKAWA YOSHIO
IPC: B05D7/14
Filed: 1986-06-09
Abstract: PURPOSE:To improve corrosion resistance, etc. by coating a compsn. consisting of the hydrolyzate, etc., of a specifically composed organoalkoxysilane, colloidal silica contg. a lower aliphat. alcohol as a dispersion medium and ethylene glycol, etc., on a base material and heating the coating. CONSTITUTION:The compsn. consisting of a) the hydrolyzate of the organoalkoxysilane (e.g., methyl trimethoxysilane) expressed by the formula R<1>Si(OR<2>)3 (R<1> is an org. group of 1-8C, R<2> is alkyl group of 1-5C or acyl group of 1-4C) or the partial condensation product thereof, b) the colloidal silica contg. the lower aliphat. alcohol as the dispersion medium, and c) the ethylene glycol or the deriv. thereof is coated on the base material and the coating is heated to 60-300 deg.C. The coated film obtd. in such a manner is transparent, highly hard and highly resistant to heat, weather, corrosion, staining, etc., and is, therefore, usable for rust prevention, hardening, high-temp. oxidation prevention, electrical insulation, wear prevention and staining prevention of metals and for hardening and weatherability improvement of plastics and for moisture-proofing, flame retarding, etc., of paper.
Patent JP-S63300510-A (JP)
Title: Laminated semiconductor device
Inventor: SUGAHARA KAZUYUKI
IPC: H01L21/20
Filed: 1987-05-30
Abstract: PURPOSE:To realize high precision lateral epitaxial growth on an interlayer insulating layer by burying a semiconductor layer to pick up the crystal axis of semiconductor element layer of the lower layer to an aperture of each interlayer insulating layer which reaches the lower semiconductor element layer provided to the position different from an aperture at the interlayer insulating layer of the lower layer. CONSTITUTION:After forming a flat first interlayer insulation film 22, a first epitaxy silicon layer 6 and a first single crystal silicon layer 71 on a MOS transistor TRA of a first layer, it is then patterned to form a single crystal silicon layer 76 and a single crystal silicon layer 74. In this case, the layer 76 is formed to the position far from the first epitaxy silicon layer 6. A MOSTRB of a second layer is formed on the layer 74. A second interlayer oxide film 24 is deposited on the TRB, it is then flattened, a second opening 51 is formed on the layer 76 of interlayer oxide film 24, and a second epitaxy silicon layer 61 is grown. Moreover, a second single crystall silicon layer 75 is formed thereon. Finally, the layer 75 is patterned and TRC of the third layer is formed, thus obtaining a three-dimensional circuit element of three-layered structure.
Patent JP-S5565896-A (JP)
Title: Fin material for heat exchanger and production thereof
Inventor: TANABE ZENICHI
IPC: C22F1/04
Filed: 1978-10-30
Abstract: PURPOSE: To avoid buckling at soldering and give anticorrosion effect to the fluid passage component material of the heat exchanger by making a fin material for heat exchangers of an aluminum alloy after heat treatment subject to the specified temperature condition.  
     CONSTITUTION: An aluminum alloy ingot containing 0.3W1.3%Mn, 0.5W3.5%Zn, 0.3W1.3%Fe (Mn≥Fe), 0.03W0.55%Mg, 0.01W0.1%Cr and 0.01W0.2%Cu is hot rolled down to 2W5mm in thickness at 450W550°C. The final cold rolling is made at a rolling reduction of less than 60%. When combined with other aluminum material composing the working fluid passage to manufacture a heat exchanger by soldering, the fin material thus produced has a crystal grain above about 60μ after the soldering and provides an excellent resistance to sag. It also has sacrifical positive electrode function. Thereby giving an anticorrosion effect to the fluid passage components of the heat exchanger. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-H01301863-A (JP)
Title: Formation of tin oxide film
Inventor: SAKATA HITOSHI
IPC: H01B13/00
Filed: 1988-05-31
Abstract: PURPOSE:To prevent the occurrence of the undesired residue of tin oxide and to obtain a tin-oxide film patterned with certainty by forming a silicon-oxide film of the prescribed pattern and then forming a tin-oxide film on the above film by a CVD method by means of tetramethyltin, etc. CONSTITUTION:A silicon oxide film 6 is formed on the whole surface of a substrate 1 and YAG laser beam, etc., irradiate this surface, by which the above film 6 is patterned into plural silicon oxide films 6a-6c of the prescribed pattern. Subsequently, tin oxide films 2a-2c are formed on the above films 6a-6c by a CVD method in which tetramethyltin or tetrabutyltin is used as a tin source. Since the tin oxide films 2a-2c are formed only on respective upper surfaces of the silicon oxide films 6a-6c, the tin oxide films 2a-2c patterned according to the patterns of the films 6a-6c can be formed. By this method, a transparent electrode consisting of the tin oxide films 2a-2c in which the undesired remaining of tin oxide is removed and patterning is performed with certainty can be obtained.
Patent JP-H08328847-A (JP)
Title: Microprogram controller
Inventor: FUJIWARA HISASHI
IPC: G06F9/26
Filed: 1995-05-31
Abstract: PURPOSE: To improve processing efficiency by storing a branch address in an ascending order sequentially replying to the branch address input signal of a microcode, sending out the branch address to a sequencer when branching is performed and setting the branch address before a branch instruction is issued. CONSTITUTION: The branch instruction signal BR of the microcode fetches the branch address MBA that is the output of a branch address register 5 in the sequencer when the branching is performed as a branch destination address. The content of the branch address MBA is sent out to a counter 23 by an address selector 22 according to the judgement of a branch condition signal BST. The branch address MBA is supplied to a ROM 1 as a microprogram address MA, then, the branching is performed. When the signal BST shows zero, it is judged that the branching is performed insufficiently, and an address 1A in which the content of the counter 23 is incremented is supplied to the ROM 1 as the microprogram address MA, and a signal ADIN is accumulated in the register 5 as a signal SHF.
Patent JP-H08330249-A (JP)
Title: Manufacture of semiconductor device
Inventor: HORIBA SHINICHI
IPC: H01L21/027
Filed: 1995-05-31
Abstract: PURPOSE: To prevent the occurrence of the constriction of a wiring pattern by piling an inert insulating film on a conductor film, and forming a film for preventing the reflection of photosensitive irradiation light hereon, and forming a photosensitive resist film on this reflection preventive film, and pattering them in the patterns in a specified form. CONSTITUTION: A field oxide film 2 is made in a thickness of about 400nm in the specified region on a silicon substrate 1, and a gate insulating film 4 is made in a thickness of about 8nm in the active region 3 surrounded by this oxide film 2. And, polycide wiring 5 to serve as the gate electrode of a MOS transistor is made. Furthermore, a protective insulating film 6 is accumulated on this polycide wiring 5, and a reflection preventive film pattern 7 is made on the surface of this protective insulating film 6. The polycide wiring 5 is patterned, with this reflection preventive film pattern 7 and the protective insulating film 6 as the masks of dry etching, so as to form a gate electrode pattern 5'.
Patent JP-S5759353-A (JP)
Title: Manufacture of semiconductor device
Inventor: KIRITA KEI
IPC: H01L23/52
Filed: 1980-09-27
Abstract: PURPOSE:To increase the speed of the circuit operation of the semiconductor device and integrate the operation to a high degree by lowering the electric resistance of the wiring of a semiconductor such as Si to which impurities are doped in the semiconductor device using the semiconductor as a wiring material. CONSTITUTION:An insulating film is formed onto a semiconductor substrate 11 in Si, etc., openings are shaped and diffusion regions 12a, 12b, etc. are molded periodic unevenness is formed onto the insulating film 13a of a region, in which wiring must be shaped, through photo-etching, etc., and nuclei for artificial crystal growth are formed. When a non-single crystal silicon film in polycrystal silicon, etc. is shaped on these whole surfaces, impurities are diffused and changed into conductive forms, and energy rays having high density such as laser rays are irradiated to a position where wiring must be formed, impurities are activated electrically while the  wiring 15a turned into a single crystal is shaped, and the electric resistance of the wiring is one half or lower of that of electrodes 15b consisting of polycrystals. A wiring pattern is etched, and coated with an insulating laer 16.
Patent JP-H02312502-A (JP)
Title: Reaping and orientation controller in combine
Inventor: YOSHIMURA FUMIO
IPC: A01B69/00
Filed: 1989-05-26
Abstract: PURPOSE:To make a reaper to travel with reaping along end part of grain stem row by automatically switching to lateral reaping control with lateral reaping sensor in a case of shorter grain stem row in longitudinal direction than reaping width in turning to longitudinal reaping from lateral reaping. CONSTITUTION:In turning to longitudinal reaping from lateral reaping at nearly finish of reaping operation, a length of grain stem row in the longitudinal direction is detected as shorter than reaping width and longitudinal reaping control by a longitudinal reaping sensor 4 is automatically switched to lateral reaping control by lateral reaping sensor 6 even in longitudinal reaping, then normal orientation control is performed.
Patent JP-H1051079-A (JP)
Title: Semiconductor device
Inventor: MURATA MICHIO
IPC: H01L29/06
Filed: 1997-05-23
Abstract: PROBLEM TO BE SOLVED: To provide a quantum well structure of semiconductor element which has the structure of a plurality of quantum wells different in width or the structure of quantum wells partially different in width, on a single substrate. SOLUTION: The substrate 1 consisting of InP is divided into nine regions in the specified direction along the surface. In these regions, masks 2 (21 -24 ) of SiNx are made alternately from the regions adjacent to both ends. On the surface of the substrate 1 where a mask 2 is not made, barrier layers 3 (31 -34 ) consisting of InP and well layers 4 (41 -42 ) of GaInAs are stacked alternately by vapor growth so as to form quantum well structure. The growth speed of the layer in the vicinity of the mask increases by the material supplied onto the mask at vapor growth shifting to the section free of a mask, thus a semiconductor element which has quantum well structure of a plurality of properties different in quantum well width depending upon the position is obtained.
Patent JP-S62293959-A (JP)
Title: Brushless dc motor
Inventor: TAKABA YOSUKE
IPC: G11B19/20
Filed: 1986-06-11
Abstract: PURPOSE:To reduce core loss generated on a return yoke itself, by forming a plurality of space sections on a ringformed return yoke set over all the surface of a stationary housing. CONSTITUTION:At the end section of a rotary shaft 3, a discformed rotor yoke 4 is integrally fixed, and on the lower surface of the rotor yoke 4, a ring-formed magnet 5 is integrally fitted. On the upper surface of a stationary housing 1, a ring-formed return yoke 6 is fixed and fitted. The return yoke 6 is made of the band-formed metallic unit 6 a of one steel sheet, and is wound up in an eddy shape from its start end 6aA to its final end 6aB, and a plurality of space sections 8 are formed in the circumferential direction. On the rotational movement of the rotor yoke 4, the core loss of the return yoke 6 itself can be reduced by a plurality of the space sections 8 of the return yoke 6, and also on the high speed rotation, the generation of the core loss is extremely reduced, and the characteristic of stable rotation can be obtained.
Patent JP-S6027393-A (JP)
Title: Preparation of carboxylic acid and/or alcohol
Inventor: SAKASAWA CHIKAHIRO
IPC: C12P7/04
Filed: 1983-07-22
Abstract: PURPOSE:To obtain the titled compound, by reacting one aldehyde with another aldehyde in the presence of aldehyde dismutase by cross disproportionate reaction, carrying out simultaneously oxidation and reduction without adding a coenzyme. CONSTITUTION:An aldehyde shown by the formula RCHO (R is H, alkyl, alkenyl, or acyl) is reacted with an aldehyde shown by the formula R'CHO (R' is as shown for R but different from R) in the presence of aldehyde dismutase, to give a carboxylic acid shown by the formula RCOOH and/or an alcohol shown by the formula R'CH2OH. USE:Suitable for a bioreactor using an immobilized mold by packing method.
Patent JP-H06283231-A (JP)
Title: Memory-card connector
Inventor: ROBAATO JII MATSUKUHIYUU
IPC: H01R12/50
Filed: 1993-06-04
Abstract: PURPOSE: To efficiently align the tail of a contactor with a printed circuit on a main board in which a memory card connector is to be installed. CONSTITUTION: This memory card connector comprises an upper part and a lower part memory card connectors 10 respectively comprising approximately H-shaped connector housings 12 comprising main bodies 14 supported by extending a plurality of contactors 120, 126, 134 in the longitudinal direction. Side part guide arms 16, 18 are formed in parallel in both end parts of the main bodies and a first recessed part 30 in which an alignment comb 140 is fitted and a second recessed part 38 in which a memory card is fitted are formed in the upper part memory card connector and a first recessed part in which an auxiliary socket 150 is fitted and a second recessed part in which a memory card is fitted are formed in the lower part memory card connector.  Then, the contactor of the upper part memory card connector penetrates the alignment comb to carry out horizontal alignment and is further joined to the auxiliary socket 150 to carry out vertical alignment.
Patent JP-S6116138-A (JP)
Title: Automatic vehicle speed control device
Inventor: YAMAGUCHI YUUICHI
IPC: B60W30/00
Filed: 1984-06-29
Abstract: PURPOSE:To make it possible to facilitate the determination of systematic malfunction of an automatic vehicle speed control, by providing a ratch mechanism for holding a switch section in its inoperative condition upon malfunction of a controller and for energizing an external display mechanism. CONSTITUTION:When any abnormality is generated in a microcomputer 6, it is transmitted to a ratch circuit 42 through a timer synchroprogram 40 and a hard timer circit 41. This ratch circuit 42 holds the microcomputer in its deenergized condition in accordance with the generation of abnormality of the microcomputer 6 to cancel a system, and makes a relay drive circuit 43 inoperative to pre- vent a relay 25 from being turned on. Therefore, the operation of an actuator 10 comes to a stop, and simultaneously, an external display mechanism 46 is energized to hold LEDs as light emitting elements in an LED display device 45 in their turn-on condition.
Patent JP-S5358848-A (JP)
Title: Door for refrigerating warehouse
Inventor: ARAI NOBUSHIGE
IPC: F25D23/02
Filed: 1976-11-08
Abstract: PURPOSE: To prevent paints from coming off owing to rusting by coating an acryl resin and also a vaseline in a groove at the bottom of a sash after alloy-processing a ground of a dressed board of a door for a refrigerating warehouse. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S61292336-A (JP)
Title: Wafer holder
Inventor: GOTO MANABU
IPC: H01L21/683
Filed: 1985-06-20
Abstract: PURPOSE:To automatically exchange a wafer ring by providing a linear portion on the ring for placing a wafer, and providing a positioning unit for deciding the position of the ring in contact with the linear portion and a wafer ring holding member having a pressing member for pressing the ring on the positioning unit. CONSTITUTION:A wafer ring holding member 4 has metal pins 5, 6 formed with collars at the heads at the portion of a wafer ring 2 in contact with the linear portion 3 of the ring 2. Positioning members 8, 9 elastically press the ring 2 energized in a direction of an arrow A by a spring provided on the back of the holding member from both sides to position the ring 2 to the center of the member 4. Since the position of the wafer 1 is decided on the member 4 when the wafer 1 is placed by regulating the position to the ring, a wafer holding unit supplied from an automatic wafer supplying unit is positioned by a positioning roller 14 on a wafer holding unit table 23. Thus, the wafer 1 is positioned on the table 23.
Patent JP-S5827487-A (JP)
Inventor: CHIYAARUZU BAAKUHAATO OOKUREI
IPC: H04N11/24
Filed: 1982-07-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。