baber/WOPTO huggingface dataset:
Patent TW-538438-B (TW)
Title: Method and apparatus for cleaning substrate
Inventor: MIZUKAWA SHIGERU
IPC: B08B3/12
Filed: 2002-04-08
Granted: 2003-06-21
Abstract: A method and apparatus for conducting ultrasonic wave cleaning onto various kinds of substrates, such as glass substrate of liquid crystal display or photomask, a printed wiring board or a semiconductor wafer, are disclosed in the invention. The invention comprises the followings: a tank 3 for storing cleaning water; supporting mechanism 6 for supporting a substrate, in which the substrate is supported in the manner that it is movable in the horizontal direction and its rear surface touches the cleaning water in the water storage tank 3; cleaning water supplying means 1 for supplying the cleaning water imparted with ultrasonic vibration to the surface of the substrate W; and means R, r for carrying the substrate W between the water storage tank 3 and the cleaning water supply means 1. Ultrasonic vibration imparted to the cleaning water being supplied onto the surface of the substrate W is transmitted through the substrate W to the cleaning water touching rear surface of the substrate so as to impart ultrasonic vibration for the cleaning water touching rear surface of the substrate. Thus, by using the cleaning water imparted with ultrasonic vibration, both the surface and the rear surface of substrate W are cleaned effectively.
Patent TW-543195-B (TW)
Title: Split-gate flash memory structure and method of manufacture
Inventor: CHANG KO-HSING
IPC: H01L27/115
Filed: 2002-06-12
Granted: 2003-07-21
Abstract: A split-gate flash memory structure. The flash memory at least includes a substrate having a trench therein, a floating gate, a select gate and a source/drain region. The floating gate is formed inside the trench such that the upper surface of the floating gate is below the substrate surface. The select gate is also formed inside the trench above the floating gate such that the select gate protrudes beyond the substrate surface. The source/drain region is formed in the substrate on each side of the select gate. The source/drain region and the floating gate are separated from each other by a distance. A tunnel oxide layer separates the floating gate from the substrate and a gate dielectric layer separates the floating gate from the select gate. A dielectric layer separates the select gate from the substrate.
Patent TW-561083-B (TW)
Title: Centrifugal solvent degreasing method for powder metallurgy process
Inventor: WANG JENN-SHING
IPC: B22F3/00
Filed: 2002-06-24
Granted: 2003-11-11
Abstract: A centrifugal solvent degreasing method for a powder metallurgy process mainly comprises mixing a powder with a polymer to form a blank, which is characterized in that the blank and a solvent are jointly loaded in a centrifugal device to be soaked for a certain period of time, and the centrifugal device is operated at a specified revolutions per minute and time for separating the polymer from the blank by a centrifugal force in order to shorten the degreasing time of the blank.
Patent TW-I261600-B (TW)
Title: Modified block copolymer
Inventor: KUBO NOBUAKI
IPC: C08L71/00
Filed: 2002-07-18
Granted: 2006-09-11
Abstract: A second-order modified block copolymer which can be obtained by reacting the cathode-active material with a second-order modifier, wherein the cathode-active material is constituted by a first-order modifier with functional group bounded to a base block copolymer which is formed by a polymer block comprising at least one vinyl aromatic hydrocarbon monomer unit as the main body and a polymer block comprising at least one conjugated diene monomer unit as the main body, and wherein the second-order modifier has a specific functional group which is reactive to the functional group of the first-order modifier group in the first-order modified block copolymer. The polymer composition comprising a second-order modified block copolymer is obtained by consisting of the mentioned second-order modified block copolymer and the thermoplastic resin and/or a rubbery polymer.
Patent TW-537911-B (TW)
Title: Sealed back pressure breathing device
Inventor: O' ROUTRKE SAM
IPC: A61M16/20
Filed: 2002-07-25
Granted: 2003-06-21
Abstract: A hand-held breathing device for use by patients having respiratory problems creates a sealed backpressure in the airways of the patient by creating resistance to exhalation. A peep valve is mounted inside a hollow body, and a pre-set compression spring is mounted between the valve and an adjustable cap or cam lever in the main body of the device. A pair of valve openings extend through the wall of the main body, one opening serving as an intake port for inhaling of air by the patient and the second port for exhalation of carbon dioxide. An intake valve is mounted inside the body between a normally open end of the device and the exhalation valve. In one of the embodiments, the device is attached to a nebulizer to facilitate buildup of positive pressure and delivery of medication to the patients' lungs.
Patent TW-I264456-B (TW)
Title: Method for thermally releasing chip cut piece from thermal release type pressure sensitive adhesive sheet
Inventor: MURATA AKIHISA
IPC: C09J7/38
Filed: 2002-07-30
Granted: 2006-10-21
Abstract: A method of overheating and releasing a chip cut piece from a thermal release type pressure sensitive adhesive sheet is a method by which a chip cut piece stuck onto a thermal release type pressure sensitive adhesive sheet having a base material, and a thermally expandable microsphere-containing thermally expandable pressure sensitive adhesive layer provided on a surface of the base material is thermally released from the thermal release type pressure sensitive adhesive sheet and which is characterized by including the step of overheating while restraining the overheat and release type pressure sensitive adhesive sheet to thereby release the chip cut piece. A means for restraining the thermal release type pressure sensitive adhesive sheet may be an absorption means using suction or may be a bonding means using an adhesive agent. In this manner, the chip cut piece can be thermally released from the overheat and release type pressure sensitive adhesive sheet while position displacement in a horizontal direction can be prevented.
Patent TW-571493-B (TW)
Title: Power conversion device
Inventor: YOSHIDA MASAHIKO
IPC: H02M1/08
Filed: 2002-07-31
Granted: 2004-01-11
Abstract: A power conversion device is disclosed, which comprises a first sampling unit 5 that samples a first circuit order value of a power converter 2 by a second cycle and generates a second circuit order value, a second sampling unit 6 that samples a first circuit detection value of a load 3 and generates a second circuit detection value, a voltage order value computing unit 9 that computes a voltage order value according to the second circuit order value and the second circuit detection value, a comparator 11 that compares the second voltage order value with the triangular wave carrier and generates a first PWM signal, and a multi-pulse killer 12 having a reverse detection means for detecting a reversed first PWM signal and a reverse control means for driving the power converter 2 by a second PWM signal that controls the reversion of the first PWM signal in accordance with the detection of the reverse detection means.
Patent TW-552621-B (TW)
Title: Semiconductor manufacturing platform and wafer carrying container
Inventor: CHANG TA-KUANG
IPC: H01L21/00
Filed: 2002-08-22
Granted: 2003-09-11
Abstract: This invention relates to a semiconductor manufacturing platform and a wafer carrying container, in which the semiconductor manufacturing platform comprises a first receiving port, a second receiving port and the wafer carrying container. There are a first pin and a first rotation mechanism disposed in the first receiving port, in which the first rotation mechanism is used to rotate the first pin towards a first direction. There are a second pin and a second rotation mechanism disposed in the second receiving port, in which the second rotation mechanism is used to rotate the second pin towards a second direction opposite to the first direction. The wafer receiving container has a bottom chassis and a top cover installed, in which there are a buckle groove and a buckle part disposed on the bottom chassis and there is a buckle hole disposed on the top cover for buckling with the buckle part. When the wafer carrying container is placed on the first receiving port, and the first pin is inserted into the buckle groove, the first pin is used to turn the buckle groove towards the first direction to separate the buckle part from the buckle hole. When the wafer carrying container is placed on the second receiving port and the second pin is inserted into the buckle groove, the second pin is capable of being turned towards the second direction and thus stuck in the buckle groove, which makes the buckle part unable to be separated from the buckle hole.
Patent TW-558744-B (TW)
Title: Semiconductor device and method of production thereof
Inventor: SANO YASUYUKI
IPC: H01L21/20
Filed: 2002-08-29
Granted: 2003-10-21
Abstract: An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and the amorphous silicon layer is crystallized by scanning a CW laser beam from the wide region toward the narrow region in a state that a polycrystalline silicon layer as a heat-retaining layer encloses the narrow region from a side face through the silicon oxide layer.
Patent TW-560066-B (TW)
Title: Method of manufacturing MOSEFT and structure thereof
Inventor: JANG WEN-YUEH
IPC: H01L21/336
Filed: 2002-09-20
Granted: 2003-11-01
Abstract: A method of manufacturing an MOSFET. A substrate is provided. A trench is formed in the substrate. A sacrificial layer is formed to fill the trench. A doped semiconductive layer is formed over the substrate. The doped semiconductive layer is patterned to form a device region, wherein the device region spans the sacrificial layer to expose a portion of the sacrificial layer. The sacrificial layer is removed. A gate dielectric layer is formed on the surface of the trench and on the top surface and the bottom surface of the device region. A conductive layer is formed on the gate dielectric layer. The conductive layer is patterned to form a horizontal surround gate surrounding the device region. A source/drain region is formed in a portion of the substrate adjacent to the device region.
Patent TW-565509-B (TW)
Title: Member recognized for calibration, head with same and electronic equipment, manufactures of LCD, organic EL device, electron emitter, PDP device, electrophoretic display, color filter, organic EL, spacer, metal wiring, lens, resist, and light diffuser
Inventor: NAKAMURA SHINICHI
IPC: B41J25/304
Filed: 2002-10-17
Granted: 2003-12-11
Abstract: The present invention relates to a member to be recognized for calibration, head unit equipped with the member and electronic equipment, manufacturing method of liquid crystal display device, manufacturing method of organic EL device, manufacturing method of electron emitting device, manufacturing method of PDP device, manufacturing method of electrophoretic display device, manufacturing method of color filter, manufacturing method of organic EL, spacer forming method, metal wiring forming method, lens forming method, resist forming method, and light diffuser forming method. The object is to provide a member to be recognized for calibration which is surely recognized as an image in a simple structure, and also to provide a head unit equipped with this member and its related electronic equipment. To solve the problem, the member to be recognized for calibration provided on an object to be aligned and having a mark 26 for image recognition is provided with a member body 25 with a mirror finished top surface 29a formed in a column shape, and a recessed mark 26 formed nearly at a center of the top surface 29a of the member body 25.
Patent TW-I248430-B (TW)
Title: Method for selectively branching of toluene, branching and alkyl transferring of toluene and aromatic hydrocarbon with nine carbons and above
Inventor: SHIE TZAI-KU
IPC: C07C6/12
Filed: 2002-10-22
Granted: 2006-02-01
Abstract: This invention is related to a method for selectively branching of toluene, branching and alkyl transferring of toluene and aromatic hydrocarbon with nine carbons and above. It mainly solves problems existed in former technology like large quantity of aromatic hydrocarbon treating circulation, highly energy consuming and critical requirements of reaction materials. This invention uses technology of selectively branching of toluene to produce a xylene mixture containing high concentration of para-xylene. Then a technological plan for branching and alkyl transferring of toluene and aromatic hydrocarbon with nine carbons and above and mixing xylene in the thermodynamical equilibrium can better solve such problems and can be used in industrial production.
Patent TW-576964-B (TW)
Title: Method and related computer for processing suspend to RAM during power off
Inventor: WU WEI-JER
IPC: G06F1/30
Filed: 2002-11-22
Granted: 2004-02-21
Abstract: A method and related computer for processing suspend to RAM (STR) during power off. The computer operates with power supplied by an external power source, and the computer includes a battery. When the computer stops receiving power from the external power source and stops to operate, the battery will supply the power required for STR, such that when the computer continues to receive power from the external source, the computer will restore operation rapidly from STR.
Patent TW-I229092-B (TW)
Title: Production of olefin polymerisation catalysts
Inventor: DENIFL PETER
IPC: C08F4/647
Filed: 2002-12-19
Granted: 2005-03-11
Abstract: The invention provides a process for producing an olefin polymerisation catalyst, comprising an organometallic compound of a transition metal or of an actinide or lanthanide, in the form of solid catalyst particles, comprising forming a liquid/liquid emulsion system which comprises a solution of one or more catalyst components dispersed in a solvent immiscible therewith; and solidifying said dispersed phase to convert said droplets to solid particles comprising the catalyst and optionally recovering said particles.
Patent TW-I251770-B (TW)
Title: Electronic control method using voice input and device thereof
Inventor: HUANG YI-JUNG
IPC: G06F3/16
Filed: 2002-12-19
Granted: 2006-03-21
Abstract: An electronic control method using voice input and device thereof employ voice operation to control at least one electronic device. The control device at least comprises a voice input unit, a memory unit, a voice recognition unit and a processing unit, in which the voice input unit grabs voice signal issued by user, the memory unit is used to pre-store multiple voice commands and the corresponding control codes, the voice recognition unit is used to convert the voice signal grabbed by the voice input unit to voice command and compare it with the pre-stored voice command in the memory unit step-by-step to grab the corresponding control code of the voice command, and the processing unit is used to translate and process the corresponding control code of the voice command and operate for controlling the preset action of the electronic device, achieving goal of controlling electronic product with voice.
Patent TW-584913-B (TW)
Title: Method of etching silicon substrate surface to increase light emission efficiency of device
Inventor: LIN CHING-FU
IPC: H01L21/306
Filed: 2003-02-25
Granted: 2004-04-21
Abstract: A kind of method of etching silicon substrate surface to increase the light emission efficiency of device is disclosed in the present invention. Before forming nanometer particle layer and the conduction layer, chemical etching is first used to remove the surface energy state or surface defect of silicon substrate, so as to reduce the non-radiative electron-hole recombination centers of the silicon substrate surface, and to increase the ratio of radiative electron-hole recombination of metal oxide silicon (MOS) emitting device such that the light emitting efficiency is greatly increased when the MOS structure generates light. In addition, the etching step also can cause nanometer scale surface structure and increase the collision probability between electron-hole pairs and phonons, so as to relatively increase the light emitting efficiency.
Patent TW-I290080-B (TW)
Title: Polishing apparatus and method for detecting foreign matter on polishing surface
Inventor: NABEYA OSAMU
IPC: B24B49/12
Filed: 2003-02-26
Granted: 2007-11-21
Abstract: A polishing apparatus 110 which comprises a polishing tool 1 having a polishing surface, and a holder means (top ring 4) for holding a semiconductor wafer (a substrate) W. Polishing apparatus 110 further comprises color CCD camera 10 for taking a color image of a region on the polishing surface; image processor means 40 for determining whether or not any foreign matter exists on the polishing surface based on a condition of a color in the color image data acquired by color CCD camera 10, and apparatus operation control section 45 which in response to the determination of image processing section 40, stops the relative movement between semiconductor wafer W and the polishing surface and separates top ring 4 and the polishing surface from each other.
Patent TW-I260695-B (TW)
Title: Wafer exposure method
Inventor: YU CHEN-HUA
IPC: H01L21/768
Filed: 2003-03-18
Granted: 2006-08-21
Abstract: A kind of wafer exposure method for preventing the low-dielectric constant layer from peeling after chemical mechanical polishing is disclosed in the present invention. The invention is suitable for use in a wafer coated with a low-dielectric constant layer and one rectangular lithographic mask, the invention includes the following steps: disposing an effective pattern at the central region of the rectangular lithographic mask; disposing a dummy pattern at the corner region of the rectangular lithographic mask; using the rectangular lithographic mask as one unit to perform exposure onto the wafer coated with low-dielectric constant layer. In the area of the wafer edge where complete rectangular lithographic mask can not be accommodated, exposure is conducted by using dummy pattern on the rectangular lithographic mask.
Patent TW-I239495-B (TW)
Title: Apparatus and method for removing horizontal moire in cathode-ray tube monitor
Inventor: KIM KYOUNG-HWAN
IPC: G11B7/007
Filed: 2003-03-26
Granted: 2005-09-11
Abstract: An apparatus and method for removing horizontal moire of cathode-ray tube (CRT) monitor system, wherein horizontal moire can be completely removed even when the moire that occurs in an upper portion of the monitor is different from the moire that occurs in a lower portion of the monitor. In one aspect of the invention, a method for removing horizontal moire in a cathode ray tube (CRT) monitor comprises generating moire correction data in synchronization with a vertical synchronous signal, the moire correction data comprising a sawtooth waveform, adjusting one of a direct current (DC) component, an alternating current (AC) component, and both the DC and AC component, of the moire correction data, outputting the adjusted moire correction data for every other horizontal scan line in synchronization with an odd-numbered or an even-numbered horizontal signal, and delaying a horizontal drive signal in response to the output adjusted moire correction data.
Patent TW-I220607-B (TW)
Title: Method and apparatus for code group identification and frame synchronization by use of Reed-Solomon decoder and reliability measurement for UMTS W-CDMA
Inventor: SHIEH SHIN-LIN
IPC: H04B1/707
Filed: 2003-04-09
Granted: 2004-08-21
Abstract: A method and apparatus having a modified Reed-Solomon decoder is used for finding a specific code group used by a base station and the frame timing synchronization with the base station. The modified Reed-Solomon decoder uses a standard Reed-Solomon decoder and some reliability measurements computed from the received code word symbols. If the reliability of a received symbol is too low, this symbol is considered as erasure. By selecting code word symbols with higher reliabilities and erasing code word symbols with lower reliabilities, the symbol error probability is reduced and the performance is improved. Several modified Reed-Solomon decoders and a few decoding strategies are introduced in order to decode the received code word sequences with a power- and memory-effective method.
Patent TW-I226665-B (TW)
Title: Method for removing silicon nitride film
Inventor: CHANG CHING-YU
IPC: H01L21/311
Filed: 2003-05-15
Granted: 2005-01-11
Abstract: A method for removing a silicon nitride film from a wafer is described. A wafer is provided having a silicon nitride film formed thereon, wherein the silicon nitride film exposes portions of the wafer surface. To remove the silicon nitride film, the wafer is put into an etching tank, into which phosphoric acid and an additive containing an oxidation chemical substance have been introduced. During the removing process, an oxidation film is simultaneously formed on the portion of the wafer exposed by the silicon nitride film to protect the exposed portion from being damaged.
Patent TW-I276892-B (TW)
Title: Liquid crystal display device
Inventor: OOTAKE TOSHIYA
IPC: G02F1/139
Filed: 2003-06-02
Granted: 2007-03-21
Abstract: The subject of the present invention is: to provide a liquid crystal display device using a homogeneous mode and having an enhanced light utilization efficiency. The solution is: the liquid crystal display device comprises electrode substrates (CT, AR); a liquid crystal layer (7) with no twist and slightly parallel liquid crystal molecules; phase plates (3, 13) disposed on the opposite side of the liquid crystal layer 7; polarizers (1, 15) allocated on the phase plates (3, 13) respectively; and a color filter (5) allocated on one of the electrode substrate (CT, AR). The electrode substrate AR comprises a light-transmission part to transmit the light incident from the backlight source on the side of polarizer (15). The phase plates (3, 13) have slow axes parallel and perpendicular to the alignment direction of the liquid crystal molecules. The product of the index of refraction anisotropy Deltan of the liquid crystal layer multiplied by the thickness d of the liquid crystal layer 7, the phase difference R1 of the phase plate 3, and the phase difference R2 of the phase plate 13 satisfy at least one of the relationship below: 530 nm <= Deltand+R1+R2 <= 570 nm, -20 nm <= Deltand-R1-R2 <= 20 nm, 255 nm <= Deltand-R1+R2 <= 295 nm, 255 nm <= Deltand+R1-R2 <= 295 nm.
Patent TW-I289892-B (TW)
Title: Plasma processing apparatus and plasma processing method
Inventor: IWAI TETSUHIRO
IPC: H01J37/32
Filed: 2003-07-18
Granted: 2007-11-11
Abstract: In a plasma processing apparatus for plasma-processing a silicon wafer 6 to which a protective film 6a is stuck in a state that the silicon wafer 6 is held by a first electrode 3 by electrostatic absorption and is being cooled, the top surface 3g of the first electrode 3 consists of a top surface central area A that is inside a boundary line P2 that is distant inward by a prescribed length from the outer periphery P1 of the silicon wafer 6 and in which the conductor is exposed, and a ring-shaped top surface peripheral area B that surrounds the top surface central area A and in which the conductor is covered with an insulating coating 3f. This structure makes it possible to hold the silicon wafer 6 by sufficient electrostatic holding force by bringing the silicon wafer 6 into direct contact with the conductor and to increase the cooling efficiency by virtue of heat conduction from the silicon wafer 6 to the first electrode 3.