baber/WOPTO huggingface dataset:
Patent KR-20020038873-A (KR)
Title: apparatus for reading book
Inventor: EOM SANG JUN
IPC: A47B23/00
Filed: 2000-11-18
Abstract: PURPOSE: A reading device is provided to read books or articles downloaded from a notebook computer at a comfortable position for many hours. CONSTITUTION: The reading device comprises a base plate(10) for placing books or a notebook computer, a flat frame(12) hinged with one end of the base plate and provided with a hanging bar(40) to hang the other end of the base plate, and many legs(14) supporting the flat frame, wherein a hanger part suspended on the hanging bar(40) selectively and provided with many hanging projections for controlling the height of the other side of the base plate is formed on the back of the base plate(10), and the legs(14) are adjustable to control a gradient of the base plate(10) widely.
Patent KR-20020041510-A (KR)
Inventor: SON JEONG HWAN
IPC: H03H17/00
Filed: 2000-11-28
Abstract: PURPOSE: A finite impulse response filter circuit is provided to embody a high speed filter calculation by dividing a flip-flop having a tap count of an FIR filter into a multi-stage. CONSTITUTION: First and third flip-flops(20,22) receive a0,a1,a2, and '0' and output the a0. A first multiplier(24) multiplies the a0 from the first flip-flop(20) by a tap count A. Second and fourth flip-flops(21,23) output the '0' and the '0' received by the first and third flip-flops(20,22), respectively. A second multiplier(25) multiplies '0' by a tap count C. A third multiplier(26) multiplies the a0 from the third flip-flop(22) by a tap count B. A fourth multiplier(27) multiplies '0' from the fourth flip-flop(23) by a tap count D. A first adder(28) adds 0C of the second multiplier(25) to a0A of the first multiplier(24). A second adder(29) adds 0D of the fourth multiplier(27) to a0B of the third multiplier(26). A multiplexor(30) receives outputs of the first and second adders(28,29) and controls each stage.
Patent KR-20020041724-A (KR)
Inventor: KIM SU HYUN
IPC: A61H39/04
Filed: 2000-11-28
Abstract: PURPOSE: A method for manufacturing a back support for stimulating spots on the body is provided to help a sound sleep and to prevent the disease by stimulating spots on the back of the body with using the back support while sleeping. CONSTITUTION: In the method for manufacturing the back support for stimulating spots on the body, a lot of projections are included. The part of the backbone at the back and the part of hips are raised by the human technology and the projections long and short according to the bend of the back are sticked to the back and the area of stimulating the spots on the back becomes maximum. The sticked projections are round type and the regular spaces are formed between projections and thereby the back support is at most closely contacted with the back.
Patent KR-20020042992-A (KR)
Title: structure for coupling bracket in drum type washing machine
Inventor: CHOI GANG MO
IPC: D06F37/22
Filed: 2000-12-01
Abstract: PURPOSE: A structure for coupling a bracket of a drum washer is provided to prevent damage of the bracket supporting a stator and a bearing housing due to excessive load during the dehydrating stroke. CONSTITUTION: A structure for coupling a bracket of a drum washer includes an inclined surface(22b) and a protrusion member(25). The inclined surface is formed at an inlet side of a boss and has a sectional area expanding toward the outside. The protrusion member has a contact surface(25b) corresponding to the inclined surface of the boss, and the contact surface is formed on a circumference part of a hole(21a) through which a bracket(21) passes. When the bolt is coupled, the contact surface of the protrusion member is closely contacted to the inclined surface of the boss.
Patent KR-20020043957-A (KR)
Title: Method for forming a isolation film
Inventor: SUNG YANG SU
IPC: H01L21/76
Filed: 2000-12-05
Abstract: PURPOSE: A method for fabricating an isolation layer is provided to improve a refresh characteristic of a dynamic random access memory(DRAM), by forming a nitride layer as a buffer layer on the entire surface after an isolating oxide layer is formed. CONSTITUTION: A pad insulation layer in which a pad oxide layer(32) and a pad nitride layer for exposing an isolation region are stacked, is formed on a substrate(31). The substrate is etched to form a trench by using the pad insulation layer as a mask. A wall oxide layer(35) is formed inside the trench. A liner nitride layer(36) is formed on the entire surface. The isolating oxide layer(37) is formed in the trench. The liner nitride layer and pad nitride layer on the substrate are eliminated. A buffer nitride layer(38) is formed on the entire surface.
Patent KR-20020044868-A (KR)
Title: A composition of valve seat composed of double layer
Inventor: CHOO GWANG MYEONG
IPC: F01L3/02
Filed: 2000-12-07
Abstract: PURPOSE: A composition of a valve seat made up of two layers is provided to improve wear-resistance by enhancing the matching characteristic of a contact surface and to increase the output of an engine by maintaining the airtightness of a valve. CONSTITUTION: A composition of a valve seat comprises 0.9-1.4wt% of carbon, 26.0-32.0wt% of chrome, less than 1.0wt% of molybdenum, less than 3.0wt% of nickel, less than 1.0wt% of manganese, 3.0-6.0wt% of tungsten, 0.4-2.0wt% of silicon, less than 3.0wt% of iron, and cobalt. Since the material for a valve surface is the same as that of a valve seat attaching surface, the frictional force of a valve is reduced. Therefore, the wear of the valve seat is reduced, while engine output is increased.
Patent KR-20020048692-A (KR)
Title: manufacturing method of semiconductor device
Inventor: SIM SANG CHEOL
IPC: H01L21/24
Filed: 2000-12-18
Abstract: PURPOSE: A fabrication method of semiconductor devices is provided to prevent a leakage current by minimizing a consumption of a silicon of a source and a drain regions. CONSTITUTION: Field oxides(12) are formed in a silicon substrate(11). Then, a gate insulating layer(13) is formed on the silicon substrate(11) and a gate electrode(14) made of a multi-crystalline silicon. Sidewall spacers(17) are formed on both sidewalls of the gate electrode(14). Then, a source region(15) and a drain region(16) are respectively formed on both sides of the silicon substrate(11) using the gate electrode(14) as a base. A silicon ion implantation is performed on the gate electrode(14), the source region(15) and the drain region(16) so as to form silicon layers(18,19), then a metal layer(20) is deposited. Metal silicides are respectively formed on the gate electrode(14), the source region(15) and the drain region(16) by two-step annealing of the metal layer(20). At this time, the silicon needed for forming a metal silicide is almost supplied from the silicon layer(18), thereby reducing a leakage current.
Patent KR-20020049730-A (KR)
Title: Method for forming an interconnection of semiconductor device having a smooth surface
Inventor: KOO GYEONG BEOM
IPC: H01L21/3205
Filed: 2000-12-20
Abstract: PURPOSE: A method for fabricating an interconnection of a semiconductor device having a smooth tungsten surface is provided to solve a residue problem and an alignment problem, by eliminating all of a lower conductive layer having a rough surface and excellent step coverage except the inside of a via hole so that the via hole is completely buried by the lower conductive layer and a void is not generated. CONSTITUTION: An insulation layer(105) is formed on a substrate(101). The via hole is formed in the insulation layer. The lower conductive layer(117) is formed on the insulation layer and inside the via hole. A part of the lower conductive layer is eliminated to form a plug in the via hole. An upper conductive layer(119) is formed on the plug and the insulation layer. The surface of the lower conductive layer is rougher than that of the upper conductive layer.
Patent KR-20020050021-A (KR)
Title: array panel of liquid crystal display and manufacturing method thereof
Inventor: CHO JAE SEONG
IPC: G02F1/1343
Filed: 2000-12-20
Abstract: PURPOSE: An array substrate of a liquid crystal display and a method of fabricating the array substrate are provided to widen viewing angle and to prevent short-circuiting of a pixel electrode and a data line. CONSTITUTION: An array substrate of a liquid crystal display includes a gate line extended in the first direction on a substrate(110), a data line(171) that is extended in the second direction on the substrate and intersects the gate line to define a pixel region, and a thin film transistor connected to the gate line and data line. The array substrate further includes a plurality of common electrodes extended in the second direction, a common line(133) that connects the ends of the common electrodes at one side and is extended in the first direction, and a plurality of pixel electrodes each of which is connected to the thin film transistor. The pixel electrodes and the common electrodes are alternately arranged. The array substrate also has the first pixel electrode connection line(174) for connecting ends of the pixel electrodes at one side, the first line located under the common line and extended in the first direction, and an auxiliary pattern extended from the first line and placed between the data line and the first pixel electrode connection line.
Patent KR-20020053532-A (KR)
Title: Circuit for wordlind voltage generator using sensing means
Inventor: KIM YONG HWAN
IPC: G11C8/08
Filed: 2000-12-27
Abstract: PURPOSE: A word line voltage generation circuit using a sensing unit is provided, which improves a reliability of a read operation by obtaining an equal cell current even when the number of read operations is increased. CONSTITUTION: A memory array(10) comprises a number of memory cells, and a row decoder(X-Decoder)(20) selects a word line. A column decoder(Y-Decoder)(30) selects a bit line. A note array(40) has the same configuration as the memory array, and generates a cell current according to a threshold voltage of the memory cell varying by a stress. A sensing unit(50) generates the first output signal by sensing the cell current of the note array. And a word line voltage generator(60) generates a proper word line voltage(Vw) used in a read operation according to the first output signal.
Patent KR-20020058985-A (KR)
Title: Structure of pancake type brush used for cleaning wafer
Inventor: LEE JAE HONG
IPC: H01L21/304
Filed: 2000-12-30
Abstract: PURPOSE: A structure of a brush for cleaning a wafer of a pancake type is provided to spread uniformly and rapidly liquid on a contact portion between a brush and a wafer by improving an embossing structure of a contact portion on a surface of the brush. CONSTITUTION: A spiral structure(60) is arranged on both sides of a contact portion between a brush and a wafer. The liquid injected to the wafer flows into the inside of the brush when the brush is rotated on the wafer. The spiral structure(60) has a curved shape or a connected linear shape. The length of the spiral structure(60) is 10 to 200 percent of a radius of the brush. The number of the spiral structure(60) is 6 to 200. The spiral structure(60) is located between a center of the brush and the length corresponding to 0 to 100 percent of the radius of the brush. Eccentricity of the spiral structure(60) is 0 to 100 percent of the total length of the spiral structure(60).
Patent KR-20020059000-A (KR)
Title: A monoblock dual-band duplexer
Inventor: HWANG GYU HAN
IPC: H01P1/205
Filed: 2000-12-30
Abstract: PURPOSE: An integrated type dual band duplexer is provided to reduce manufacturing procedures and the space occupied by the duplexer at the printed circuit board of terminal, by integrating a dual band duplexer to the PCB of terminal. CONSTITUTION: A dielectric block(D20) has a first duplexer and a second duplexer(22) which are disposed to oppose each other, and a duplexer(24) attached to the bottom surface of the dielectric block so as to suppress spurious characteristics. The first duplexer includes input/output electrodes(P11,P12), and a plurality of resonators(R11 to R18) having a plurality of through holes and conductors arranged in each through hole. The second duplexer includes an input/output electrodes, and a plurality of resonators(R21 to R30). The first and the last resonators(R11,R18) from among the plural resonators of the first duplexer serve as a band stop filter, and the other resonators serve as a band pass filter. The first and the last resonators(R21,R30) from among the plural resonators of the second duplexer serve as a band stop filter, and the other resonators serve as a band pass filter.
Patent KR-20010021746-A (KR)
Title: 진공 처리 장치용 두 부품의 슬릿 밸브 삽입부재
IPC: H01L21/302
Filed: 1998-07-09
Abstract: 진공 처리 장치는 처리 챔버에 부착되며 처리 챔버와 정합시키기 위하여 슬릿 밸브에 배치된 슬릿 밸브 삽입부재를 구비한 슬릿 밸브를 구비한 이송 챔버를 갖는다. 슬릿 밸브는 2개의 부품, 즉 이송 챔버의 외부로부터 이송 챔버의 슬릿 밸브 개구내로 슬라이드되는 외측부, 및 이송 챔버의 내부로부터 외측부내로 슬라이드되는 내측부로 제작될 수 있다. 삽입부재의 부분은 임의의 처리 챔버가 임의의 슬릿 밸브 개구에 부착되는 것이 허용된다. 외측부는 처리 챔버가 이송 챔버에 부착될 때 슬릿 밸브 개구로부터 제거되지 않을 수 있지만, 내측부는 처리 챔버의 부착에 관계없이 수리를 위하여 용이하게 제거될 수 있다.
Patent KR-20010022908-A (KR)
Title: Laundry detergent compositions comprising a saccharide gum degrading enzyme
Inventor: BETTIOL JEAN-LUC
IPC: C11D3/00
Filed: 1998-06-10
Abstract: The present invention relates to laundry detergent compositions, comprising a saccharide gum degrading enzyme providing excellent cleaning performance, especially food stain/soil removal, dingy cleaning and whiteness benefits.
Patent KR-20010033568-A (KR)
Title: β-하이드록시-γ-부티로락톤 유도체 및β-(메트)아크릴로일옥시-γ-부티로락톤 유도체의 제조방법
IPC: C07D307/33
Filed: 1998-12-24
Abstract: 본 발명은 글리시돌 또는 2-메틸-2,3-에폭시프로판올을 시안화물로 전환시키고, 이어서 시안화물을 가수분해시키고 가수분해물을 락톤으로 전환시킴을 포함하는, 화학식 1의 β-하이드록시-γ-부티로락톤 또는 β-메틸-β하이드록시-γ-부티로락톤의 제조방법에 관한 것이다. 
     화학식 1 
     
       
     
     상기 화학식 1에서, 
     R 1 은 수소 또는 메틸이다.
Patent KR-20010034352-A (KR)
Title: 2개의 강화 열가소성 튜브 접합 방법
IPC: B29L23/00
Filed: 1999-11-22
Abstract: 본 발명은 동일한 직경을 갖는 2개의 강화 열가소성 소재 튜브(18A, 18B)를 접합하는 방법에 관한 것이다.  먼저 상기 두 튜브(18A, 18B)의 단부(24, 26)가 외주 용접부(28)를 따라 맞대기 단접되고(butt welded)된다.  상기 용접부(28)가 형성된 후, 보강 열가소성 소재의 외측 재킷(outer jacket; 30)은 상기 두 튜브(18A, 18B)의 단부 섹션에 걸치는 상기 용접부(28)의 양쪽으로 연장하며 상기 외주 용접부(28)의 길이 대부분에 걸쳐 끼워진다.  상기 외측 재킷(30)은 상기 외측 재킷(30)과 상기 두 튜브(18A, 18B)의 단부 섹션이 상호 침투(interpenetrate)될 때까지 반경방향으로 가열되고 가압된다.
Patent KR-20010052816-A (KR)
IPC: G02C5/22
Filed: 2000-04-12
Abstract: An elastic hinge comprising, at the end of a temple, a box-like portion which contains a spring which is kept compressed against its bottom by a body which can slide with respect to the box-like portion and is associated with a head which protrudes from the box-like portion and is adapted to abut against a first hinge component which partially retains it inside the box-like portion. The head and the first hinge component are cam-shaped, so as to form open and closed positions for the temple. The hinge comprises a retention element which is operatively interposed so that it can slide axially between the spring and the body and has an external portion whose radial dimensions are larger than corresponding undercuts which are provided in the box-like portion and act as stroke limiters for the retention element in the direction in which the spring pushes. The external portion is shaped so as to move beyond the undercuts when the retention element is inserted in thebox-like portion. The retention element retains the spring insidethe box-like portion even when the body exits completely from it.
Patent KR-20020059983-A (KR)
Title: Absence automatic response system using a voice home page system
Inventor: CHOI JUNG IN
IPC: G06F17/00
Filed: 2001-01-09
Abstract: PURPOSE: A system for an automatic response in absence is provided to supply an automatic response service for a caller of a wire/wireless public switched telephone network in the case that a user does not reply using information of a stored voice homepage prepared and stored through a voice on a wire/wireless telephone, an editing method by a DTMF, or a VEB builder through the Internet. CONSTITUTION: An integrated VEB server(120) is connected to a PSTN(public switched telephone network) and the Internet. A VEB database server(140) is connected to the integrated VEB server(120). A telephone number extracting unit(121) extracts a telephone number of a terminated user from a call signal being inputted. A VEB browser(122) connects the PSTN to the integrated VEB server(120) and supplies an automatic response service to a telephone caller. A VEB builder(123) supplies a web screen to a user for making the user manufacture a voice homepage, forms contents corresponded to a voice homepage menu of a tree structure into a VXML file adapted to a voice browsing, and stores the VXML file in the VEB database server(140). The VEB database server(140) stores member information, automatic response service setting information, voice homepage information for an automatic response service.
Patent KR-20010082019-A (KR)
Title: Fuel-delivery device for internal combustion engine in a vehicle
Inventor: AMLER MARKUS
IPC: F02M37/22
Filed: 2001-01-29
Abstract: PURPOSE: A fuel supply apparatus is provided, in which the discharge is controlled by a valve device in dependence on the fuel pressure, and the valve device opens the discharge in response to exceeding a fuel pressure located under the nominal pressure, and a check valve is integrated in the feeding aggregate. CONSTITUTION: A fuel supply device for an internal combustion engine(10) of a motor vehicle comprises a supply container(12), a feeding aggregate(14) which is electric-motor driven and feeds fuel from the supply container to an injection device of the internal combustion engine, a pressure sensor(34) which determines a fuel pressure downstream of the feeding aggregate, a control device(36) connected with the pressure sensor and controlling an operation of the feeding aggregate so that a fuel pressure is at least approximately below a nominal pressure, a throttled discharge(42) arranged downstream of the feeding aggregate, a valve device(40) operative for controlling the discharge depending on a fuel pressure and opening the discharge when a fuel pressure located under the nominal pressure is exceeded, and a check valve(22) integrated in the feeding aggregate.
Patent KR-20020065795-A (KR)
Title: DRAM Devices and Method of Forming the Same
Inventor: LEE GYU HYEON
IPC: H01L21/8242
Filed: 2001-02-07
Abstract: PURPOSE: A method for fabricating a dynamic random access memory(DRAM) device is provided to reduce parasitic capacitance, by making the gap between storage node contact plugs filled with a silicon oxide layer of a low dielectric constant such that the storage node contact plugs pass between bitlines. CONSTITUTION: A metal oxide semiconductor(MOS) transistor is formed on a substrate(10). An interlayer dielectric is formed on the MOS transistor. A conductive layer for a bitline, a sub silicon oxide layer and a sub silicon nitride layer are stacked on the interlayer dielectric and patterned to form a bitline pattern. A bitline interlayer dielectric of a silicon oxide layer material is stacked on the bitline pattern and planarized to expose the upper surface of the sub silicon nitride layer. The sub silicon nitride layer is wet-etched to form a groove. The sub silicon oxide layer and the bitline interlayer dielectric near the groove are isotropically etched to form an enlarged groove exposing the bitline. A silicon nitride layer is stacked on the enlarged groove and anisotropically etched to expose the bitline interlayer dielectric so that a silicon nitride layer pattern is formed. A silicon nitride layer spacer is formed on the sidewall of the enlarged groove over the bitline in the bitline pattern region having an enlarged width. An interlayer dielectric for an interconnection is stacked on the entire substrate over the plate electrode and patterned to form a metal contact hole. A conductive layer is stacked to form a plug.
Patent KR-20010085355-A (KR)
Inventor: HONDA TAMAKI
IPC: H03F3/193
Filed: 2001-02-08
Abstract: PURPOSE: To prevent a bias point from fluctuating on gate current fluctuation caused by an input signal level or temperature change and further to operate an FET in all A, AB and B classes. CONSTITUTION: A gate bias voltage Vgsdc of the FET is compared with a reference voltage by an operational amplifier A and closed loop control is applied to the gate bias voltage Vgsdc of the FET by the output of the operational amplifier A. The temperature characteristics of the mutual conductance of the FET are compensated by setting the temperature characteristics of one of or both resistors R1 and R2. The fluctuation of a drain bias current Idsdc caused by the input signal level and temperature change can be suppressed. Since a gate circuit and a drain circuit are separated, the circuit can be operated in all the A, AB and B classes. Since a voltage drop caused by resistor Rg can be neglected, the design or the like of the resistor Rg regarding the stability of high frequency characteristics preferential is enabled.
Patent KR-20020068168-A (KR)
Title: Installation method for building wall pipe protect sleeve and the building wall pipe protect sleeve thereof
Inventor: KIM DAE HYUN
IPC: F16L5/10
Filed: 2001-02-20
Abstract: PURPOSE: A sleeve for protecting a pipe and a method for installing the sleeve are provided to improve the waterproof characteristic of the pipe by enlarging a contact area between the pipe and an inner portion of the sleeve. CONSTITUTION: A sleeve body(10) formed at one side thereof with a coupling part(11) is installed at a predetermined portion of a building wall. Then, a pipe is inserted into the sleeve body(10). After that, a sealing ring(40) and a pressing ring(30), and a fastening ring(20) are sequentially inserted into the pipe. Then, the fastening ring(20) is screw-coupled to the coupling part(11) of the sleeve body(10). After coupling the fastening ring(20) to the coupling part(11) of the sleeve body(10), the fastening ring(20) is fastened until the sealing ring(40) securely grips the pipe.
Patent KR-20020071069-A (KR)
Title: The Precision hall made of super hardness materials and simultaneous outside diametal processing machine and that method
Inventor: MIN BYUNG JONG
IPC: B23B5/26
Filed: 2001-03-02
Abstract: PURPOSE: An apparatus for processing a minute hole and an outer diameter of an ultra-hard material and a processing method thereof are provided to achieve the mass-production of the ultra-hard material by simultaneously processing the minute hole and the outer diameter of the ultra-hard material. CONSTITUTION: An apparatus for processing a minute hole and an outer diameter of an ultra-hard material includes an upper base(1) and a lower base(2). A hinge(3) is provided at one side of the upper and lower bases(1,2). An adjusting lever is provided at one end of the hinge(3) so as to angularly adjust the upper base(1) with respect to the lower base(2) about the hinge(3). An adjusting protrusion(5) is formed at one side of a lower surface of the upper base(1). A space block having a predetermined thickness is inserted into a lower end of the adjusting protrusion(5) in order to adjust the angle of the upper base(1).