baber/WOPTO huggingface dataset:
Patent TW-359660-B (TW)
Title: Peeling device, tape processing device incorporating the peeling device, and tape printing apparatus incorporating the tape processing device
Inventor: KAMIJO NORIYUKI
IPC: B41J11/48
Filed: 1997-10-27
Granted: 1999-06-01
Abstract: A peeling device according to one aspect of the invention peels off part of a peel-off paper from a peel-off paper-backed adhesive tape which is a laminate of a substrate tape having a surface coated with an adhesive and a peel-off paper affixed to the substrate tape via the adhesive. A rotational member is rotated by a driving force transmitted from a drive source. On an end face of the rotational member there are arranged a peeling projection rotated to be brought into contact with a substrate tape-side surface of an end of the peel-off paper-backed adhesive tape to carry out a bending releasing action on said end portion of the adhesive tape. The adhesive tape is guided toward the peeling projection when it is inserted and part of the end portion other than a free end brought to the peeling projection is held. In a tape processing device for processing a peel-off paper-backed adhesive tape, according to another aspect of the invention, a trimming mechanism trims one end of the peel-off paper-backed adhesive tape, while a peeling mechanism peels off a peel-off paper from the peel-off paper-backed adhesive tape. The driving force is transmitted to the trimming mechanism and the peeling mechanism from a simple drive force. There is also provided a tape printing apparatus incorporating the tape processing device.
Patent TW-370685-B (TW)
Title: Method for manufacturing a rough-surface film layer of antireflection
Inventor: KUO YUNG-CHIEH
IPC: H01L21/3213
Filed: 1997-11-25
Granted: 1999-09-21
Abstract: The present invention provides a method for manufacturing a rough-surface polysilicon layer of antireflection, which the procedures include forming a doped amorphous polysilicon layer on a substrate, and forming an amorphous polysilicon on the doped amorphous polysilicon layer, and performing an anneal process for the amorphous polysilicon layer to form a rough-surface polysilicon of antireflection, then performing a second anneal process with optionally a gas entered so that the rough-surface polysilicon layer of antireflection can be doped. The doped rough-surface polysilicon layer of antireflection not only reduces reflectivity but also has conductivity, so it is not necessary to be removed in the manufacturing process.
Patent TW-449884-B (TW)
Title: Method for forming SOI/CNOS transistor
Inventor: WU SHIE-LIN
IPC: H01L21/8238
Filed: 1997-12-08
Granted: 2001-08-11
Abstract: This invention is about the SOI (silicon-on-insulator) process of CMOS (complementary metal-oxide-semiconductor) transistor that has high-speed operation and low energy consumption. This fabricating process includes the following steps. At first, a pad oxide is formed on a silicon substrate. A silicon nitride layer is formed to cover the top of this pad oxide layer. The phosphorous ions with high energy and low concentration are implanted into this silicon substrate to form an N-well. After forming a thick field oxide layer on this silicon substrate at high temperature environment flowing with oxygen gas, boron ions with high energy and low concentration are implanted into this silicon substrate to form a heavily doped boron-ion-layer buried deeply in the N-well. The following rapid thermal processing will activate the buried boron ions to form a p<SP>+</SP> deeply buried layer in an N-well and will repair the defects caused by the ion implantation. Then, a diluted hydrofluoric acid or buffered-oxide etching solution is used to remove field oxide layer. The anodic electrochemical dissolution method is performed onto this p<SP>+</SP> deeply buried layer in order to obtain porous silicon molecular layer. Thermal oxidization method is then performed onto this porous silicon molecular layer to form the N-type silicon isolation island. After the deposition of thick oxide layer formed by chemical vapor deposition method is completed, thick oxide layer is etched back to device surface so as to accomplish the planarization. Selective boron ion implantation method is used to make part of N-type silicon isolation island convert into P-type silicon isolation island. Then, the following processes of CMOS can be conducted onto the isolation islands stated above.
Patent TW-394717-B (TW)
Title: Apparatus for shaping liquid portions of solder in soft soldering semiconductor chips
Inventor: LUCHINGER CHRISTOPH B
IPC: B23K1/20
Filed: 1997-12-12
Granted: 2000-06-21
Abstract: The apparatus, in preparation of soft soldering semiconductor chips to a substrate (6), is for the shaping of spherically domed liquid portions of solder (8) into flat solder applications (8""), as evenly distributed as possible and correctly positioned on the substrate. On a shaft (10) which can be lifted and lowered, a punch (20) with a punch surface (22) is guided vertically, spring mounted and slewable all around the axis of motion (16) and also frictionally engaged. The punch (20) is provided with distance keeping means - e.g. in the form of a circumferential rim (24) - which extend beyond the punch surface (22) and are intended for touching down on the substrate (6). In each operation cycle the punch (20) is automatically aligned to the substrate (6) . Since the punch (20) is self-adjusting with respect to the shaft (10), it is unnecessary to maintain an exactly defined height position above the substrate.
Patent TW-436983-B (TW)
Title: Semiconductor device, method for manufacturing the same
Inventor: ISHIBASHI YUTAKA
IPC: H01L27/108
Filed: 1998-02-18
Granted: 2001-05-28
Abstract: The present invention provides a semiconductor device, which is formed by the borderless contact technique, and is characterized in being able to surely connect a damascene-structured wiring layer to contacts of a lower layer. In the solution means, after forming trenches 20b connected to lower layer contacts 19B into e.g. a second layer insulation film 20, the exposed contacts 19B at their bottoms are selectively etched and the bottoms of the trenches 20b are planarized to remove the micro-recesses formed into the contact faces of a wiring layer 21b and contacts 19B when forming the trenches 20b, thus enhancing the film-forming structure formability of a barrier metal layer 21a and metal layer 21b in the trenches 20b.
Patent TW-364053-B (TW)
Title: Heat exchange and process for producing the same
Inventor: NISHIO KIYOSHI
IPC: F28D1/02
Filed: 1998-05-06
Granted: 1999-07-11
Abstract: The present invention relates to a heat exchanger 11 used in the IC production line, wherein the end portions of resin tubes 21 are installed at a plurality of independent tube holding holes 23 of holding tray 20, and each resin tube 21 is internally fused in one piece with tube holding pores 23 on the holding tray over the range of a predetermined length alpha. The fusion part where the plurality of resin tubes 21 are fused to the holding tray becomes a non-contact, non-tightly-formed structure due to the space between the resin tubes, so as to enhance the adhesion reliability of the fusion part and the heat exchange efficiency, and easily minimizing the size of the exchanger. The members of resin tube 21 and holding tray 20 can be made of fluorinated resin.
Patent TW-425719-B (TW)
Title: Thin film transistor array and the manufacturing method thereof
Inventor: TAGUCHI NAOYUKI
IPC: G02F1/1368
Filed: 1998-05-14
Granted: 2001-03-11
Abstract: A high quality thin film transistor array which is to etch and remove the gate isolation layer under the pixel electrode in total or along the drain bus longitudinally so as to simultaneously remove the residual amorphous silicon caused by definition defects. The isolation layer is located between the drain bus and pixel electrode to form the separating border. Therefore, the reject ratio will be reduced from reducing the point defect of semi-bright spots which is caused by the capacitor coupling generated in the pixel electrode while interconnecting the remaining amorphous silicon caused by definition defects with the drain bus.
Patent TW-352419-B (TW)
Title: Composition of X-ray mask
Inventor: Du lin-xin
IPC: G03F1/22
Filed: 1998-06-04
Granted: 1999-02-11
Abstract: A composition of X-ray masking includes: a silicon wafer having a first and second surfaces; an absorbing layer on the first surface; the transfer patterns carved on the absorbing layer; thin membrane, on the first surface of the silicon wafer, including the transfer patterns; an etching window within the inside of the silicon wafer, starting carving from the second surface till the exposure of patterns on the membrane.
Patent TW-474974-B (TW)
Title: Aromatic alcohol ink for ink jet printer
Inventor: YANG CHANG-MOU
IPC: C09D11/02
Filed: 1998-07-03
Granted: 2002-02-01
Abstract: This invention provides aromatic alcohol ink for ink jet printer, containing adequate amount of alcohol compound, water-soluble dye (or pigment), deionized water and aromatic alcohol compound with various smells. The ingredients are well mixed to prepare perfumed ink jet printer ink which renders printed document with perfume smell after printed and distributes perfume smell in air during printing.
Patent TW-408257-B (TW)
Title: An expandable device with changeable contact angle
Inventor: LIOU JENG-SHIUN
IPC: G06F1/16
Filed: 1998-07-21
Granted: 2000-10-11
Abstract: The expandable device of this invention consists of one bottom base, one connection base, one connector, and one pair or multiple pairs of hooks. The bottom base stationary foundation and the external expansion connection. The connection base is pivoted on the bottom base. The connector is mounted on one of the contact faces of the connection base and is used to provide a signal connection of the expandable device and a laptop computer. The hooks are equipped on the connection base for locking the connection base and the laptop computer. Furthermore, the expandable device of this invention can add selectively a supporting rod, a release device, a locking device, etc. for enhancing its utilization and operation characteristics.
Patent TW-391976-B (TW)
Title: Phosphate polyester flame retardant
Inventor: TZOU GUO-TAI
IPC: C08G63/692
Filed: 1998-07-23
Granted: 2000-06-01
Abstract: This invention related to a glossy phosphate polyester flame retardant manufacture process. The proposed process consumed shorter polymerization time and yielded higher residual phosphate. The flame retardant included phosphate compound (I), in which R1 represented hydrogen atom, C<1-6> alkyl or phenyl group; R2 and R3 independently represented C<1-6> alkyl, phenyl, C<1-6> carboxyl group or hydrogen atom; A represented alkylene groups. The process involved a polymerization between dicarboxylic acid and diol under antimony catalyst, cocatalyst, and hindered phenolic antioxidant. The polymerization catalyst was selscted from at least one of zinc, manganese, magnesium, and calcium metallic compounds. The molar ratio of catalyst amount to dicarboxylic acid amount should be between 12 and 45 minimolar % and also satisfied 12 <=  4 M<Zn> + 3 M<Mn> + 3 M<Mg> + 2 M<Ca> <= 140 (minimolar %) in which  M<Zn>,  M<Mg>,  M<Mg>, and M<Ca> respectively represented the minimolar %, related to dicarboxylic acid, of zinc, manganese, magnesium, and calcium.
Patent TW-369441-B (TW)
Title: Process for producing welded cu and Cu-alloy tubes
Inventor: ROLLER ERLING
IPC: B22D11/06
Filed: 1998-07-27
Granted: 1999-09-11
Abstract: The invention relates to a process for producing welded Cu and Cu-alloy tubes in a combined production line, comprising an ingoing-material casting plant, a hot-rolling mill, a tube-shaping and -welding plant and also a drawing device for the welded tube, characterized by the sequence of the following process steps: (a) casting of a virtually continuous roughed strip, (b) hot-rolling of the cast roughed strip at a rolling speed=casting speed x drawing-down to form an intermediate strip, (c) cooling of the intermediate strip to ≤ 100 DEG C to room temperature and descaling of the surface of the intermediate strip, (d) cold-rolling of the intermediate strip to form a strip, (e) coiling of the untrimmed strip to form coils of predetermined coil weights, the steps a to e proceeding as an in-line process and subsequently being followed, directly or via an intermediate store, by further working steps, (f) uncoiling and shaping of the strip to form a longitudinal-seam tube, (g) welding of the longitudinal seam to form a welded longitudinal-seam tube, (h) if necessary external and internal deburring of the tube, (i) calibration, subsequently being followed, directly or via an intermediate store, by the last working step of (j) drawing of the welded tube in least one drawing stage to from the finished tube if the welded tube not dose not already constitute the finished tube.
Patent TW-377515-B (TW)
Title: Method of manufacturing memory capacitors of DRAM
Inventor: WENG CHUAN-FU
IPC: H01L27/108
Filed: 1998-08-12
Granted: 1999-12-21
Abstract: This invention relates to a method of manufacturing memory capacitors of DRAM, whereby the intergap wall automatically aligns the terminal contact hole and also further reduces the size of contact hole. The intergap wall can also protect the expose bit line as a result of mis-alignment in the formation of terminal contact hole, thus preventing short circuit in the component. Another purpose of this invention is to expand the electrode surface area of capacitor to increase its capacitance.
Patent TW-401699-B (TW)
Title: A method and device for generating display frames from a sequence of source frames through synthesizing one or more intermediate frames exclusively from an immediately preceding source frame
Inventor: MEI PATRICK FRANSISCUS P
IPC: H04N5/44
Filed: 1998-08-31
Granted: 2000-08-11
Abstract: For raising a frame rate, first a sequence of source frames is received at a source frame rate. For a pair of immediately adjacent source frames of this sequence, one or more intermediate frames are synthesized through a geometrical transform. In particular, each intermediate frame is based exclusively on an immediately preceding source frame. Display frames are selected from the sequence of the intermediate frames, and as the case may be, also from the source frames.
Patent TW-500699-B (TW)
Title: Electrolyzed water production system
Inventor: YAMAGUCHI HIROKI
IPC: C02F1/467
Filed: 1998-10-22
Granted: 2002-09-01
Abstract: An electrolyzed water production system has a brine storage tank, brine supply means for supplying the saturated brine from the storage tank for mixing with raw water supplied from a source of raw water and an electrolytic cell for producing electrolyzed water. An electric control circuit comprises detection means for detecting the conductivity of the diluted brine supplied to the electrolytic cell, and feedback control means for controlling operation of the brine supply means in such a manner that the conductivity of the diluted brine detected by the detection means is adjusted to a predetermined target value. The circuit also includes memory means for memorizing an amount of saturated brine mixed with the raw water in operation of the brine supply means under control of the feedback control means, and initial control means for controlling operation of the brine supply means in such a manner that a supply amount of saturated brine is adjusted on a basis of the instant amount of saturated brine memorized in the memory means during previous operation of the brine supply means under control of the feedback control means when the electrolytic cell is activated to start production of the electrolyzed water.
Patent TW-395133-B (TW)
Title: Detection of a watermark in a compressed video signal
Inventor: KALKER ANTONIUS ADRIANUS C M
IPC: H04N19/467
Filed: 1998-11-10
Granted: 2000-06-21
Abstract: A method and arrangement for detecting a watermark embedded in an MPEG compressed signal are disclosed. A conventional MPEG decoder is stripped to such an extent that a modified baseband video signal  suitable for watermark detection is obtained. In accordance with the invention, a plurality of pictures with the embedded watermark is accumulated (2,3,4) in the transform domain, and the inverse DCT (5) is applied to the accumulated result. Conventional watermark detection (6) is then applied to the accumulated plurality of pictures in the spatial domain.
Patent TW-444508-B (TW)
Title: Apparatus and method for dynamically controlling brightness of objects on a display monitor
Inventor: BAR-NAHUM GUY
IPC: G09G5/02
Filed: 1999-01-28
Granted: 2001-07-01
Abstract: A computer system configured for displaying graphical objects having image-based content objects and nonimage-based content objects simultaneously provides high color quality for the image-based content objects and high resolution for the nonimage-based content objects by selectively reducing color intensity values in the nonimage-based content objects, and then increasing the display intensity of the modified graphic object on the display monitor. The computer system includes a display driver filter configured for intercepting a function call generated by an operating system graphics module for a display driver. The display driver filter selectively reduces the color intensity values of selected objects specified in the graphics module function call and that do not need color enhancement, and generates a second function call requesting performance of the graphic operation for a copy of the graphic object having the reduced color intensity values. Use of the display driver filter in combination with a monitor providing an enhanced brightness level enables the objects requiring high resolution to be displayed at normal intensity simultaneously with image-based content objects at a higher intensity for improved color quality.
Patent TW-516030-B (TW)
Title: Three-dimensional imaging system
Inventor: BLANCHARD PAUL MICHAEL
IPC: G11B7/135
Filed: 1999-03-09
Granted: 2003-01-01
Abstract: A three dimensional imaging system is described which exploits the defocusing of non-zero diffraction order images caused by the quadratic distortion of a diffraction grating 4. An optical system 1 is used such that objects 5, 6 and 7, located at different distances from grating 4, are imaged simultaneously and spatially separated on a single plane B.
Patent TW-386036-B (TW)
Title: AC/DC potentiometer therapeutic equipment
Inventor: AISAKI SHIIGAN
IPC: A61F7/08
Filed: 1999-03-19
Granted: 2000-04-01
Abstract: The present invention aims to provide an AC/DC potentiometer therapeutic equipment where the high electric potential output can be switched at will between AC/DC for therapy. The characteristic of the AC/DC potentiometer therapeutic equipment is that it includes a conductive cloth 1 having a guide 1a that can output AC/DC high electric potential for therapy, an AC/DC power circuit that can supply the guide 1a with AC/DC high electric potential for therapy and an AC/DC switching circuit that allows the high electric potential to be switched between AC/DC through the electric potential supply method of the AC/DC power circuit.
Patent TW-406353-B (TW)
Title: Method of forming a concave oxidized structure at the trench bottom
Inventor: CHEN JIAN-HUNG
IPC: H01L21/762
Filed: 1999-04-08
Granted: 2000-09-21
Abstract: The present invention discloses a method for forming a concave oxidized structure at the trench bottom. It is characterized that after utilizing dry etching to define the trench, depositing a first oxide layer at the side wall and bottom; then, depositing a second oxide layer over the said first oxide layer surface, and filling up the space surrounded by the said first oxide layer in the trench. Then, proceed the annealing process to make the first and second oxide layer compact. Moreover, back-etch said two oxidized layers to remove the partial surface overlapping the first insulator layer. And on the side wall of the trench, a side wall bullet composed by the residual of the first oxide layer is therefore formed. Then the concave oxide structure is formed by the residual of the first and the second oxide layer at the side wall and bottom of the trench.
Patent TW-594134-B (TW)
Title: Liquid crystal display and manufacturing method thereof
Inventor: OKUBO MASAHIRO
IPC: G02F1/133
Filed: 1999-05-15
Granted: 2004-06-21
Abstract: Avoid unnecessary transparent conduction film material attached on liquid crystal side surface. The resolution of the invention is forming pixels on liquid crystal side surfaces of transparent substrate allocated by facing each other and separated by liquid crystal. In addition, form the LCD apparatus of the transparent conducting film at least on reverse side surface of the liquid crystal of transparent substrate along one direction. The features are formation of the said transparent conduction film except edges of transparent substrate on all pixel areas.
Patent TW-418571-B (TW)
Title: Reed solomon coding apparatus and coding method thereof
Inventor: FUKUOKA TOSHIHIKO
IPC: H03M13/15
Filed: 1999-05-27
Granted: 2001-01-11
Abstract: The Reed Solomon coding apparatus and coding method thereof is disclosed in which the Reed Solomon coding can be performed according to the variations of the primitive polynomial expression, produced polynomial expression, and the number of the error corrections. The structure of the present invention comprises of: produced polynomial expression coefficient generating block 1, using the primitive polynomial expression set value 4 and the produced initial value 3 as its input, and producing the coefficient data 8 by expanding the produced polynomial expression with the values; and data coding block 2, using the primitive polynomial expression sat value as its input, dividing the information polynomial expression by the produced polynomial expression for performing the data coding.
Patent TW-415000-B (TW)
Title: Apparatus for adjusting wafer location
Inventor: LIOU MING-FA
IPC: H01L21/68
Filed: 1999-06-21
Granted: 2000-12-11
Abstract: An apparatus for adjusting a wafer location is provided. The apparatus comprises a cassette. A holding device for holding a wafer is set on the cassette. A driving device is fixed under the cassette by a fixing part. The driving device connects a detecting bail by a transmitting means. A protrusion part is set at the detecting bail. A notch is formed on the cassette near the detecting bail. An inner sensor and an outer sensor are set at the sidewall of the notch. The transmitting device connecting the detecting bail further connects a rotating device for rotating the detecting bail on a plane that is normal to the cassette. When the detecting bail is rotated normal to the cassette by the rotating device, the protrusion part of the detecting bail is set between the inner sensor and the outer sensor. The range of the detecting bail drove by the driving device is controlled by limiting the location of the protrusion part of the inner sensor and the outer sensor beside notch.
Patent TW-458763-B (TW)
Title: Cultivating method and container used in the method
Inventor: YAMAMOTO KOHEI
IPC: A01G9/02
Filed: 1999-08-20
Granted: 2001-10-11
Abstract: The present invention is provided to save the labor needed for transplant operations and reach a high survival percentage of the transplanted sprouts. Thereafter, the sprouts grow up in an excellent condition. According to the present invention, a cylindrical container can be placed in an inclined or horizontal manner. An angle is formed between the axis of the container and the direction in which the sprout is growing up during cultivation. The stem of the sprout is substantially vertical from soil and can also be transplanted in this way. The transplanted sprout is free of stress and the survival percentage thereof of high. The stem can reach vertically and the whole sprout grows up in an excellent condition.