baber/WOPTO huggingface dataset:
Patent JP-H07277593-A (JP)
Title: Folding accuracy inspection apparatus
Inventor: YUZAWA ATSUSHI
IPC: B41F13/54
Filed: 1994-04-11
Abstract: PURPOSE:To provide a folding accuracy inspection apparatus capable of surely detecting the dificiency of a fold caused by the dispersion of the dimension of section and further inspecting various folding deficiencies produced in the section on a single inspection stage. CONSTITUTION:A former inspection mark 23F and buckle inspection mark 23B are printed to cross the folding line of a section 17. The position, length and area of both marks 23F, 23B concerning the section 17 carried to a chopper folding part 3 and stopped therein are measured on a plane by the use of CCD cameras 10a, 10b. The deficiencies of former folding and buckle folding can be inspected on the basis of the positional deviation of both marks 23F, 23B from the regular position, the length deviation from the regular length and the difference from the regular area. Also, the positional deviation, bending or the like of the section 17 before the chopper folding can be inspected.
Patent JP-S59223135-A (JP)
Title: Welding method of chain element
Inventor: SATOU RIYOUDA
IPC: B23K11/00
Filed: 1983-06-02
Abstract: PURPOSE:To weld a completed ring satisfactorily without causing distortion deformation and welding jutting-out by bending a material to be joined to a ring shape, applying the end face superposed parts to stepped or slanted face joining, clamping and electrically welding them in welding of a chain element. CONSTITUTION:A wire 10 of specified length whose end faces are cut to slanted faces 12, 13 is bent and fitted to an outer frame 3, and the slanted faces 12, 13 are clamped by electrodes 21, 22 having a linear recessed part 23, and welded electrically. Good welding which is free from objectionable deformation and welding jutting-out and does not require after-finishing can be obtained. Joints 12, 13 may be made to stepped shape, etc.
Patent JP-S5219834-A (JP)
Title: Prime mover having piston stroke caused by combined press ure of air a nd oil
Inventor: ITAGAKI YOSHITAMI
IPC: F03C1/04
Filed: 1975-08-08
Abstract: PURPOSE: To provide a prime mover producing motive force through the utilization of the combined pressure of air and oil without fuel consumption and pollution. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-S5323013-A (JP)
Title: Excitation device of synchronous machine
Inventor: OGIMOTO KAZUO
IPC: H02P9/14
Filed: 1976-08-16
Abstract: PURPOSE: To decrease a current rating and duty of an AC field breaker by connecting exciting power source transformers of plural numbers in series in an AC excitation circuit together with inserting an AC field breaker among transformers. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H06286034-A (JP)
Title: Manufacture of heat-resistant honeycomb core
Inventor: HIROSAKI KUNIHIKO
IPC: B32B7/02
Filed: 1993-03-31
Abstract: PURPOSE:To manufacture a heat-resistant honeycomb core, for which deterioration in adhesive agent and cell walls is prevented, heat resistivity is improved, excellent performance with undamaged characteristic for use in a rectifier is provided and above-mentioned functions are materialized at low cost while conductiveness and capacity of electromagnetic shielding are provided. CONSTITUTION:A base material 1 is made by mixing metal foil and fiber- reinforced plastic sheets or by mixing pulp, inorganic material and binders. A honeycomb core is formed by bending the base material and by sticking the same with adhesive. Then, the formed honeycomb core is immersed in inorganic mixed solution such as water glass, and thereby a heat-resistant honeycomb core 10 with inorganic mixture 9 adherent and impregnated thereto by coating is manufactured. Metal powder or chopped metal fibers may be mixed therewith.
Patent JP-S58212914-A (JP)
Title: Heat processing device
Inventor: TANIFUJI KOUICHI
IPC: B29C59/00
Filed: 1982-06-07
Abstract: PURPOSE:To obtain the titled device that can give sufficient conformity to the shape without giving external pressure to a work to be processed by a method wherein a work to be processed is held by magnetic attraction of a movable body and a base and heated and processed by the heating element provided on the movable body and the base. CONSTITUTION:A sheetlike work to be processed 7 is inserted between the magnetic movable body 1a and the base 4 which face each other and the movable body 1a is moved toward the arrow A to hold the work 7 between them. The work 7 is held by the magnetic attraction of both flexible magnet 6a and magnetic movable body 1a and by uniform compression conforming to the shape of the work 7. The spring 2 absorbs the elongation of the heating element 3 to prevent corrugation from occurring on the heating element 3.
Patent JP-S5430892-A (JP)
Title: Analyzing method and analyzing agent of phosphoric acids and acid ions
Inventor: TANAKA TAKASHI
IPC: G01N31/00
Filed: 1977-08-12
Abstract: PURPOSE: To enable the measurement of concentrationsofPO 3   4   -  and AsO 3   4   -  in water to be performed simply and accurately even by unskilled persons by bringing the specific molybdic acid contained composition having captured PO 3   4   -  and AsO 3   4   -  in contact with a reducing agent solut 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H11345978-A (JP)
Title: Thin film transistor, its manufacture, and liquid crystal display device
Inventor: KAMIURA NORIHIKO
IPC: G02F1/136
Filed: 1999-04-05
Abstract: PROBLEM TO BE SOLVED: To improve the reliability of a low-temperature polysilicon thin film transistor by reducing the turning-off current of the transistor by arranging an intermediate-concentration first semiconductor area of a specific concentration between a low-concentration third semiconductor area and a high- concentration second semiconductor area in the transistor. SOLUTION: In a thin film transistor(TFT), the impurity concentrations of a low-concentration source-drain area 5, an intermediate-concentration source- drain area 11, and a high-concentration source-drain area 12 are respectively set between 1×10<16> cm<-3> and 1×10<18> cm<-3> , between 1×10<18> cm<-3> and 1×10<20> cm<-3> , and between 1×10<20> cm<-3> and 1×10<22> cm<-3> . It is necessary to increase the resistance of the low-concentration impurity area 5 for relieving electric field in the vicinity of the drain and, conversely, it is essential to decrease the contact resistance between the high-concentration impurity area 12 and a source-drain electrode 8. A potential barrier is formed against a minority carrier at a junction when the TFT is turned off by providing an n* area 11 having good activation between an n<+> area 5 and an n<+> area 12.
Patent JP-S58173-A (JP)
Title: Manufacturing method for semiconductor switch
Inventor: TSUKADA HIROICHI
IPC: H01L29/749
Filed: 1981-06-25
Abstract: PURPOSE:To prevent withstand voltage decline by a method wherein a P<+> type region is added to a MOSFET forming P type well region that is the sole component constituting the P type gate region, in the manufacturing process of a PNPN thyristor switch. CONSTITUTION:P type doped layers 41 and 42 with the impurity concentration relatively low are deposited in the superficial depth of an N type Si substrate 40. The entirety is then covered with an oxide film 48 and then subjected to heat treatment for the enlargement of the doped layers for conversion into an anode forming P type region 43 and a gate forming P type region 44. Next, within the region 44, two P<+> type regions 45 are diffusedly formed wherein a MOSFET drain forming N type region 46 and a cathode/MOSFET source forming N type region 47 are provided. After this process, a conventional process is applied wherein the film 48 is replaced by a film 49 and, across the film 49 located between the regions 46 and 47, a polycrystalline gate electrode 50 and an erroneous operation preventing circuit forming polycrystalline Si resistor 51 are provided. Next, an anode electrode 53 is provided in the region 43, a cathode electrode 56 in the region 46, and a common electrode 68 to be shared among the regions 47, 43, and 45.
Patent JP-S58213983-A (JP)
Inventor: YAMAGISHI KATSUAKI
IPC: E06B9/264
Filed: 1982-06-07
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S585504-A (JP)
Title: Oil pressure actuator controller
Inventor: YOKOMAKU RIYOUHACHI
IPC: F15B13/00
Filed: 1982-06-07
Abstract: PURPOSE:To improve precision of stoppage by connecting a low-speed control direction selector valve to the first pilot passage and also connecting both the low-speed control direction selector valve and a high-speed control direction  selector valve to the second pilot passage. CONSTITUTION:When a high-speed control direction selector valve 97 is transferred to the right side position, a pilot passage 62b is connected directly to a tank T through ducts 94, 98. Accordingly, the pressure in a chamber 87 is lowered and the difference in pressure between the front and the rear of a detecting orifice 64b is made the maximum. This causes return-oil of a motor M sent in a chamber 86 to push a spool 64b upward so that a hole 90 is fully opened to an annular groove 69, returning oil to the tank T. Thus, the motor M rotates at a high speed without any restriction on the flow rate of return-oil of the motor M.
Patent JP-S5724685-A (JP)
Title: General-purpose intermediate treatment of municipal garbage
Inventor: AZEGAMI TSUNEO
IPC: B09B3/00
Filed: 1980-07-18
Abstract: PURPOSE: To enable an overall miniaturization of an installation volume, inhibition of odor generation during the storage of garbages and ennancement of heat recovery and use effect, by crushing municipal garbages and agitating them with aeration.  
     CONSTITUTION: Municipal garbages having various shapes and apparent specific gravities of 0.1W0.2 in general are crushed into a size of e.g., about 100mm or less by a crusher. The apparent specific gravity of the garbages is controlled at 0.3W0.4 by the crushing. The crushed garbages are received in a reservoir and mixed in a partially fluidized state and aerobically fermented in the reservoir by aeration and agitation. The garbages are heated at about 60W70°C by the heat of oxidation generated by the fermentation, so that odorous components and adherent water are evaporated and discharged and the garbages, while being dried, are reserved. Further the discharged gases are mixed with combustion air and fed into an incinerator, for instance, so that discharge of malodorous substances can be inhibited. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-S5322646-A (JP)
Title: Mounting method of finned pi pes to pipe plate
Inventor: MATSUMOTO ATSUJI
IPC: F28F9/013
Filed: 1976-08-16
Abstract: PURPOSE: In a heat-pipe type gas-gas heat-exchanger, etc., to facilitate fixing of finned-heat pipes to partition plate at a low cost. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S60259889-A (JP)
Title: Latent heat type heat accumulator of direct heat exchange system
Inventor: KOSAKA MINEO
IPC: F28D20/00
Filed: 1985-05-07
Abstract: PURPOSE:To contrive to reduce the cost of the titled device by simplifying a structure wherein a plurality of guide plates, on one side of the flat plate portion of each of which a group of small holes is provided and along the whole periphery of each of which a flange plate is provided, are arranged in inclined manners that the side with a group of small holes is located higher and arranged alternately in the interior of a heat accumulator, in which heat accumulating material consisting of inorganic hydrate and its saturated water solution is filled. CONSTITUTION:The system of the titled latent heat type heat accumulator is to exchange heat by directly contacting liquid heat transfer medium, which does not mix with heat accumulating material and is formed in droplets, with the heat accumulating material. In the heat accumulator just mentioned above, the heat accumulating material 24 consists of inorganic hydrate and its saturated water solution. Heat transfer medium 23, which flows in and floats up through the heat accumulating material, passes through groups of small holes provided on a plurality of guide plates 27 and located alternately so as to directly and efficiently exchange heat with the heat accumulating material 24. In addition, crystals 35 extracted from the molten liquid of the heat accumulating material 24 during the heat releasing process of the heat accumulator are born on the plates 27 in the state separated to the respective guide plates 27, resulting in performing efficient heat exchange.
Patent JP-S59221332-A (JP)
Inventor: EDOGAA OSUTORININGU
IPC: C08G75/0231
Filed: 1984-05-17
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S62255782-A (JP)
Inventor: HERUMUUTO YANATSUHA
IPC: F26B9/00
Filed: 1987-04-22
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H11298379-A (JP)
Title: Set spare radio equipment
Inventor: MUTO HIDEYUKI
IPC: H04B1/74
Filed: 1998-04-09
Abstract: PROBLEM TO BE SOLVED: To increase probability that a circuit can be relieved by using a spare system, to improve system reliability and also to improve the operation efficiency of a system by using a spare receiving system based on detection results of 1st and 2nd detecting parts and receiving an output of the other common part side which does not have a failure when one of common parts of the two current systems has a failure. SOLUTION: A 2+1 set spare radio system has a receiving circuit and a demodulator circuit for one spare system to two current systems and transmits data signal strings for two systems. A switch controlling means 8 of the device decides a failure state of LNAs 2-1 to 2-2 according to output results of common failure detection circuits (ALM DET) 3-1 to 3-2. When there is a failure in the LNA and when either the LNAs 2-1 or 2-2 has the failure, a selection circuit 13-1 or 13-2 of an SYS1 or an SYS2 selects the SYS1 or the SYS2 respectively through a prescribed processing procedure.
Patent JP-H07307423-A (JP)
Title: Cooling block of power semiconductor device
Inventor: WATANABE MICHIO
IPC: H01L23/473
Filed: 1994-05-12
Abstract: PURPOSE:To manufacture the cooling block of power semiconductor device in excellent heat exchange efficiency with a refrigerant capable of miniaturizing a semiconductor power converter while increasing the efficiency. CONSTITUTION:A vortical cooling tube 1a is formed by bending a circular pipe 1a from the central part. Next, lead part 2 is formed on the end of this cooling tube 1 and then two cooling tubes 1 are overlapped and molten copper or aluminum is poured around them to form a casting. As for the cooling tube material, copper or aluminum is excellent thermal conductivity is applicable. At this time, if a square pipe is substituted for the circular pipe 1a, the sectional area ratio of flow path of the cooling water occupying a cooling block 6 increases thereby enabling the pressure loss in the cooling water to be diminished.
Patent JP-S57212825-A (JP)
Title: Protective device
Inventor: KANEKO TAKASHI
IPC: H03K17/082
Filed: 1981-06-24
Abstract: PURPOSE: To prevent the destruction of an element at failure, by generating a control signal and storing it with the supply of a continuous overcurrent detection output and inhibiting the output from the switching element with the control signal.  
     CONSTITUTION: If overcurrent is continuously detected as a short-circuit load, the charging voltage of a capacitor 8 is gradually increased. An integration potential waveform caused by the charge/discharge is compared with an output of a reference voltage 12 at a voltage comparator 10. When the integration potential is higher than the potential than the output of the reference voltage 12, an output 10c of the voltage comparator 10 goes to a high level. This output is applied to a bistable multivibrator 14 set it. A switch circuit 4 is opened with a signal of an output 14c. As a result, a signal path from a pulse width modulation circuit 1 is completely cut off. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H05294579-A (JP)
Title: Drive device for testing operation of governor in elevator
Inventor: MORIGUCHI MASAO
IPC: B66B5/00
Filed: 1992-04-17
Abstract: PURPOSE:To provide a compact and easily handlable drive device for testing a governor in an elevator. CONSTITUTION:A drive ring 2A adapted to be pressed against a governor pulley is attached to an exposed output shaft 2b of a motor 2 housed in a cylindrical easing 1, and a power source 9, a means 8B for regulating the rotational speed of the motor 2 and a power source switch 8 are also housed in the easing 1. The rotational speed regulating means 8B are adjusted while the drive ring 2A is pressed against the governor pulley so as to gradually increase the rotational speed of the motor 2, and a rotational speed at which the governor is operated, is read and compares with a normal value in order to test the governor.
Patent JP-S62256978-A (JP)
Title: Continuous production of metallic anode
Inventor: MONZEN KANEHIRO
IPC: B26F3/00
Filed: 1986-04-30
Abstract: PURPOSE:To easily and continuously produce metallic anodes by cutting a flat metallic plate with at least one water jet cutter. CONSTITUTION:A flat plate 6 having holes is drawn out of a casting machine and passed by a water jet cutter 8. The cutter 8 cuts the parts 2, 4 to be cut at first and then cuts the next parts 1, 3 to be cut. Water jets are ejected under >=2,500kg/cm<2> pressure at about 19l/min rate. The diameter of the water nozzles is regulated to about 0.6mm and metallic oxide powder is added on the upstream side of the nozzles.
Patent JP-S59227712-A (JP)
Title: Novel method for producing silicon fluoride thin film
Inventor: FUKUDA NOBUHIRO
IPC: C23C16/42
Filed: 1983-06-03
Abstract: PURPOSE:To form a fluorinated silicon thin film on a substrate in high productivity, by the glow-discharge decomposition of a gaseous mixture composed mainly of a higher fluorinated silane and containing monosilane or hydrogen. CONSTITUTION:A substrate such as silicon single crystal wafer, glass, stainless steel, ceramic, etc. is placed in a reaction chamber having a glow-discharging means. A gaseous mixture composed of a higher fluorinated silane of formula SinF2n+2 (n is integer of >=2), especially hexafluorodisilane of formula Si2F6 (n=2) mixed with SiH4 and H2 is introduced into the reaction chamber, and glow discharge is generated in the chamber to deposit a thin film of fluorinated silicon on the substrate in high productivity.
Patent JP-S581817-A (JP)
Title: Fixing method for magnetic core of magnetic head
Inventor: HOSHI ISAMU
IPC: G11B5/105
Filed: 1981-06-26
Abstract: PURPOSE:To ensure the accurate fixing of a magnetic core, by forming a fitting groove of the magnetic core to the front wall of a holding case made of a heat softening material, providing a thin fixing rib to the outer wall of said groove and deforming the rib with pressing under heat softening with the inner wall of the groove set as the positioning reference surface of the magnetic core. CONSTITUTION:A magnetic core 1 containing a coil 2, a terminal plate 4 and a terminal pin 5 is supported in a holding case 3 of a heat softening material like Zn, poly acetal, etc. In this case, a core fitting groove 7 including an inner wall 8, a bottom wall 9 and an outer wall 10 is formed to the front wall of the case 3. Then a cut plane 23 is formed remaining a thin core fixing rib 21 stretching to the wall 10. The core 1 is put into the groove 7 and then shifted toward an arrow mark through a cut part 23 of the case 3 by means of a heating tool 24 heated up to about 450 deg.C. The tool 24 is pressed to the cut side surface 22 to soften and deform the rib 21 and then pressed to the wall 8 which is set as the positioning reference surface of the core 1. The core 1 is cooled and fixed accurately into the groove 7. In such way, a deformation so far casued by the calking is avoided without impairing the magnetic properties for the fixture of a magnetic core.
Patent JP-H05298082-A (JP)
Title: Method and device for editing program
Inventor: KATAOKA MITSUTERU
IPC: G06F9/06
Filed: 1992-04-17
Abstract: PURPOSE:To provide the method and the device for program editing which surely substitute names of labels with easy operation and improve the work efficiency. CONSTITUTION:A label indicating part 12 indicates a label to be sustituted for together with its function, and a same function label selecting part 13 selects a label having the same function as the indicated label from an objective program 11, and a name input part 15 inputs a new label name, and a duplication discriminating part 14 discriminates whether the new label name coincides with any label name included in the program 11 or not. If it does not coincide with any label name in the program 11, a name substituting part 16 substitutes the label name of the selected label with the new label name.
Patent JP-S581068-A (JP)
Title: Formation of metallic compound film
Inventor: YASUI TAKESHI
IPC: C23C16/34
Filed: 1981-06-26
Abstract: PURPOSE:To form a metallic nitride film having uniform and stable gloss, by executing Dc glow discharge in a mixed gas atmosphere having a specified composition by using a base body to be treated as a cathode, and subsequently, executing the glow discharge in a hydrogen atmosphere by placing the base body under the specific condition. CONSTITUTION:In a mixed gas atmosphere consisting of a metallic halogenide, hydrogen and nitrogen or ammonia or hydrocarbon, a base body to be treated is installed as a cathode, and a metallic compound film is formed on the surface of the base body by DC glow discharge. Subsequently, this base body is installed in a hydrogen atmosphere, and glow discharge is executed by setting gaseous hydrogen pressure, applied voltage, a temperature of the base body to be treated, and density of a current flowing in the base body to be treated, to 0.5-5Torrs, DC voltage of 400V-4kV, 0-500 deg.C and 0.15-10mA/cm<2>, respectively. In this regard, the metallic halogenide is a halogenide of a metal selected among Ti, Zr, Ta, Hf, Cr, Nb, W, V, Si and B.
Patent JP-S582040-A (JP)
Title: Manufacture of semiconductor device
Inventor: GOTOU HIROSHI
IPC: H01L21/762
Filed: 1981-06-26
Abstract: PURPOSE:To reduce the generation of bird beaks or heads, by forming an Si single crystal layer up to the height over an SiO2 film on the exposed part of a single crystal Si substrate later to shave up to the height of the SiO2 film. CONSTITUTION:The single crystal Si substrate 1 is thermal-oxidized to form the SiO2 film 2. The SiO2 film 2 is selectively etched by plasma sputter etching with small side cut action. N type impurity is introduced into the exposed Si substrate 1 by thermal diffusion method to form an N type region 3. The N type Si single crystalline layer 4 is formed thicker than the SiO2 film on the Si substrate 1 by vapor epitaxial growing method. Polishing is performed until the SiO2 film 2 exposes to remove a part of the polycrystalline Si layer 5 and Si single crystalline layer 4. The surface part of the exposed Si single crystalline layer 4 is oxidized by thermal oxidization treatment to form an SiO2 film 6 as an insulating layer.
Patent JP-S61258039-A (JP)
Inventor: KOJIMA MINORU
IPC: D02G3/36
Filed: 1985-05-08
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。