baber/WOPTO huggingface dataset:
Patent TW-I222015-B (TW)
Title: Mechanism for extending the number of registers in a microprocessor
Inventor: HENRY G GLENN
IPC: G06F9/22
Filed: 2002-07-30
Granted: 2004-10-11
Abstract: An apparatus and method are provided, for accessing extended registers within a microprocessor. The apparatus includes translation logic and extended register logic. The translation logic translates an extended instruction into corresponding micro instructions for execution by the microprocessor. The extended instruction has an extended prefix and an extended prefix tag. The extended prefix specifies register address extensions, the register address extensions indicating the extended registers, where the extended registers cannot be specified by an existing instruction set. The extended prefix tag is an otherwise architecturally specified opcode within the existing instruction set. The extended register logic is coupled to the translation logic. The extended register logic receives the corresponding micro instructions, and for accesses the extended registers.
Patent TW-544871-B (TW)
Title: Flash memory with self-aligned split gate and methods for fabricating and for operating the same
Inventor: HUNG CHIH-WEI
IPC: H01L21/8246
Filed: 2002-09-12
Granted: 2003-08-01
Abstract: A flash memory with a self-aligned spilt gate and the methods for fabricating and operating the same are described. The flash cell consists of a substrate having a deep n-well and a shallow p-well in the deep n-well therein, a control gate structure on the gate oxide layer located on the p-type shallow well, a floating gate on one sidewall of the control gate and over the substrate, a tunnel oxide layer between the control gate and the floating gate and between the floating gate and the substrate, a drain in the substrate adjacent to the control gate, a common source located in substrate adjacent to the shallow well, connecting to the deep well and extending to the substrate under a portion of the floating gate, and a pocket p-well in the substrate around the drain and electrically connecting with the shallow well.
Patent TW-589647-B (TW)
Title: Shielded inductors
Inventor: KUNG SAMUEL
IPC: H01F17/04
Filed: 2002-10-11
Granted: 2004-06-01
Abstract: An inductor includes a core, a coil disposed about the core, and a shield. The shield and the core are connected to each other so that a closed magnetic loop is formed. The core may be a single piece or made up of a pair of core segments. The shield may include two halves or portions or may include a cover with a base. The core may be unitary with the shield at one or both ends thereof. In embodiments where the shield includes two portions, the portions may have substantially identical geometry and dimensions.
Patent TW-I235360-B (TW)
Title: Regeneration device of recording medium and method thereof
Inventor: HAMADA TOSHIYA
IPC: G06F21/62
Filed: 2002-10-16
Granted: 2005-07-01
Abstract: The present invention relates to a regeneration device of recording medium and method thereof achieved with one code number input when inputting a code number for regeneration to both a directory and a play list as required. A CD is formed with a plurality of directories, DVR, DVR1, DVRn. The directory DVR is set up with a flag, DVR_protect_flag, capable of controlling to regenerate the data therein. A rpls of a data play list of the directory DVR also specifies the playback_control_flag capable of controlling the regeneration of the data. When the DVR_protect_flag is 1, regeneration is allowed only when correct code number is inputted. When DVR_protect_flag and playback_control_flag are both 1, the code number input in association with the playback_control_flag is neglected if correct code number in association with the DVR_protect_flag is already inputted.
Patent TW-564500-B (TW)
Title: Process for controlling denuded zone dept in an ideal oxygen precipitating silicon wafer
Inventor: LIBBERT JEFFREY L
IPC: H01L21/322
Filed: 2002-10-24
Granted: 2003-12-01
Abstract: The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of crystal lattice vacancies therein, the peak concentration being present in the wafer bulk between an imaginary central plane and a surface of the wafer, such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafer forms oxygen precipitates in the wafer bulk and a thin or shallow precipitate-free zone near the wafer surface.
Patent TW-555723-B (TW)
Title: Porous structure ceramic heat dissipation plate
Inventor: HSU CHABY
IPC: G06F1/20
Filed: 2002-11-08
Granted: 2003-10-01
Abstract: This invention relates to a kind of porous structure ceramic heat dissipation plate, mainly comprising a heat dissipation layer and a heat conduction layer; the heat dissipation layer uses microscopic chemical liquid phase transformation principle to form ceramic powder with micro-cell structure through non-uniformly dispersing emulsion type slurry to be joined with sub-micro powder material and then sintered into porous structured dissipation layer with hollow crystalline body, whose contact surface to the heat source has a heat conduction layer to absorb energy from the heat source; the porous structure with hollow crystalline body of the heat dissipation layer uses air as heat dissipation medium and a force convection condition is further included to increase the heat dissipation capability of the heat dissipation plate.
Patent TW-I257916-B (TW)
Title: A method for trimming an array of carbon nanotubes
Inventor: LIU LIANG
IPC: C01B31/02
Filed: 2002-11-13
Granted: 2006-07-11
Abstract: The invention provides a method for trimming an array of carbon nanotubes. The method includes the steps of: providing an aligned carbon nanotubes array, providing a pulsed laser source, orienting the incident pulsed laser in a given direction, exposing an upper portion of carbon nanotubes array to radiation of the pulsed laser. The carbon nanotubes of the upper portion of the carbon nanotubes array are thus evaporated and shaped into plurality of sharpening tips. The resultant carbon nanotubes array has a lower threshold of emission field, and enhanced field emission performance.
Patent TW-583273-B (TW)
Title: Photosensitive resin composition
Inventor: TAHARA SYUJI
IPC: B32B7/00
Filed: 2002-11-20
Granted: 2004-04-11
Abstract: An object of the present invention is to provide a photosensitive resin composition, which can form a fine image by exposure of low energy, which can be developed even if an organic solvent is not used and from which a coating film exhibiting excellent heat resistance, flame resistance, adhesion to a conductor and electrical properties with retaining good flexibility and flexing properties is obtained through development and heat treatment (imidation), a dry film obtained from the photosensitive resin composition, and a workpiece having a coating film formed by curing the dry film. The photosensitive resin composition of the invention comprises (A) polyamic acid comprising a recurring unit represented by the following formula (1), (B) (meth)acrylate having at least two photopolymerizable C=C unsaturated double bonds, (C) a photopolymerization initiator and (D) a flame retardant, and in this composition, the (meth)acrylate (B) having at least two photopolymerizable C=C unsaturated double bonds is contained in an amount of 10 to 700 parts by weight based on 100 parts by weight of the polymeric acid (A). Wherein n is an integer of 1 to 100, R1 is a divalent organic group consisting of only elements selected from C, H and O, R2 is a tetravalent organic group consisting of only elements selected from C, H and O.
Patent TW-569317-B (TW)
Title: Method for producing silicon interconnect with various dopants
Inventor: WEI ZIN-CHEIN
IPC: H01L21/265
Filed: 2002-12-05
Granted: 2004-01-01
Abstract: A method for producing a silicon interconnect with various dopants comprises defining a plurality of silicon interconnects on a semiconductor substrate; and using a means of protecting the semiconductor substrate by alternatively forming a protective layer and a mask layer to perform an ion implantation on the to-be-doped silicon interconnects to form silicon interconnects with various dopants.
Patent TW-I242565-B (TW)
Title: Fluorine-containing polymerizable monomers and polymers, anti-reflection film materials and resist compositions using same
Inventor: KOMORIYA HARUHIKO
IPC: C08F220/02
Filed: 2002-12-10
Granted: 2005-11-01
Abstract: The present invention relates to a fluorine-containing polymerizable monomer having a structure of the general formula (1), where each of R1 and R2 is independently a methyl group or trifluoromethyl group, and each of R3 and R4 is independently a hydrogen atom, an alkyl group, a fluorinated alkyl group, a ring structure having an aromatic ring, or an acid-labile protecting group, each of the alkyl group and the fluorinated alkyl group independently having a straight-chain, branched or ring form and having a carbon atom number of 1-25, each of R3 and R4 optionally and independently containing at least one of an oxygen atom and a carbonyl bond.
Patent TW-I282027-B (TW)
Title: Optical compensation plate and polarization plate using the same
Inventor: ADACHI JUNICHI
IPC: G02F1/13363
Filed: 2003-01-22
Granted: 2007-06-01
Abstract: The present invention provides an optical compensation plate having an optical compensation layer. The optical compensation layer is able to inhibit the cracking under pressure. A crack preventive layer is directly formed on the surface of the optical compensation layer by coating at least one surface of an optical compensation layer with a thermosetting adhesive and hardening the thermosetting adhesive. This cracking preventive layer prevents the cracking of the optical compensation layer, which is preferably layer having a cholesteric structure. The constituent material thereof may preferably be a non-liquid-crystal polymer formed by polymerization of an oriented liquid crystal monomer, or an oriented liquid crystal monomer.
Patent TW-I265477-B (TW)
Title: Recording medium, recording method, and recording apparatus
Inventor: SAKO HOICHIRO
IPC: G11B20/10
Filed: 2003-01-24
Granted: 2006-11-01
Abstract: At the head of a UDI area of the present invention, payload 0 as a header is recorded. When recording the payload 0 or other payloads, each of them is recorded fivefold for eliminating an error. After payload 0, another payload such as payload 1 is recorded. When performing fivefold recording, the same payload number is recorded fivefold. An UDI is recorded at the position after one second from the start time S. Payloads are arranged at a 12-frame interval. Thus, five data pieces to be multiplexed are not arranged in the disc radial direction but widely distributed over the track, thereby increasing the error resistance. The data interval is set to an optimal value considering the number of multiple writing, the linear speed, recording position on the disc, and the like.
Patent TW-I240262-B (TW)
Title: Optical pickup and compact disk drive system
Inventor: KOBAYASHI TAKASHI
IPC: G11B7/1353
Filed: 2003-02-25
Granted: 2005-09-21
Abstract: The present invention relates to an optical pickup and compact disk drive system capable of securing satisfactory characteristic of laser beams by preventing the occurrence of aberration of the laser beams due to temperature change or humidity change. This system comprises: an objective lens 9a for focusing the laser beams to a disk-like recording medium 100; a beam splitter 15 for transmitting the laser beams and changing optical paths; a light receiving element 13 for receiving the laser beams the optical paths of which are changed by a beam splitter; and a composite lens 14 which is arranged on the optical paths of the laser beams incident on the beam splitter from a light emitting element 11, and the optical paths of the laser beams incident on the light receiving element from the beam splitter, which comprises an optical diffraction part 23 which diffracts the laser beams and a lens 24 which shows a prescribed function to the laser beams, and which has the respective parts of an optical diffraction and the lens, etc., formed integrally. A through hole 14c which the laser beams to be incident on a game splitter from the light emitting element pass through is formed at the composite lens.
Patent TW-I231322-B (TW)
Title: Modified polyester fiber and method for producing the same
Inventor: CHEN SHIAN-JANG
IPC: D01F6/84
Filed: 2003-03-14
Granted: 2005-04-21
Abstract: This invention discloses a modified polyester fiber and method for producing the same. The invented modified polyester fiber comprises alkoxylated 2-methyl-1,3-propanediol, and exhibits characteristics that it is easy to be dyed at low temperature and the dye is not easily washed out. The method of producing the modified polyester fiber comprises alkoxylating 2-methyl-1,3-propanediol and alkyl diol, performing polymerization reaction for terephthalic acid and alkyl ester thereof, and spinning to obtain the modified polyester fiber. The modified polyester fiber can be dyed at low temperature, has excellent dyeability and water wash fastness, which therefore can be extensively applied to production of synthetic fiber.
Patent TW-I247714-B (TW)
Title: Vertical stand-up pouch
Inventor: BARTEL LAWRENCE JOSEPH
IPC: B65B9/10
Filed: 2003-03-13
Granted: 2006-01-21
Abstract: A vertical stand-up pouch or flexible package, and method for manufacturing same, constructed by modification to existing vertical form and fill packaging machines. The invention involves producing a vertical stand-up pouch from a single sheet of packaging film by creating a vertical crease along one edge of a packaging film tube prior to forming a transverse seal on the tube. Said vertical crease is formed using a stationary tucker bar positioned outside the packaging film tube and between two forming plates positioned inside the packaging film tube.
Patent TW-I271788-B (TW)
Title: GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
Inventor: UENO MASAKI
IPC: H01S5/323
Filed: 2003-05-13
Granted: 2007-01-21
Abstract: The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020 DEG C in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.
Patent TW-I240890-B (TW)
Title: Alternative type upgrading method of firmware
Inventor: LIN SHU-YI
IPC: G06F9/445
Filed: 2003-06-10
Granted: 2005-10-01
Abstract: The present invention relates to an alternative type upgrading method of firmware, wherein a software is defined and formed of a boot loader, boot image, and application image. The boot image comprises the boot code to reboot and to re-active the updating flow of the software, and the related protocol. The occupied space of its program code is less than that of the application image. When booting the software, the boot loader determines and selects the boot image for execution. Then the boot image loads the application image and executes the same. When proceeding upgrading, the application image is cleared first to have a first empty storage space. A new version of boot image is downloaded and stored in the first storage space. The boot image of the old version is removed to have a second empty storage space. Finally, the application image of new version is downloaded and stored in the second storage space, so as to complete the updating/upgrading. By using the software upgrading technology of alternatively exchanging the storage space, the stability and reduction of storage space in the updating process can be maintained at the same time.
Patent TW-I223080-B (TW)
Title: BiMOS peak voltage detector
Inventor: SHIAU MING-CHUEN
IPC: G01R19/04
Filed: 2003-07-23
Granted: 2004-11-01
Abstract: A peak voltage detector having a bipolar metal oxide semiconductor (MOS) structure is proposed in the present invention. The invention is composed of a bipolar differential amplifier 1, a bipolar charging transistor 2, a capacitor C, the first resistor R1 and an output stage 3. The bipolar differential amplifier 1 is designed to have an asymmetric structure where only single side load transistor QP1 is used. In addition, the load transistor together with the bipolar charging-transistor 2 forms a current mirror. The bipolar differential amplifier 1 is used as a comparator. The bipolar charging transistor 2 is used as a charger to provide the required charging current for the capacitor. The output stage 3 is used to adjust the voltage signal V(C) of the capacitor C so as to accurately output the peak voltage of the inputted signal. In addition to accurately detecting the peak voltage of the inputted signal, the proposed peak voltage detector of the invention has multiple functions such as simple circuit structure, small chip-occupation area and advantage for device miniaturization. Additionally, an output stage is disposed so as to effectively prevent the held peak input voltage from being destroyed due to the access action of the external circuit. Furthermore, the invented peak voltage detector also can effectively eliminate the excess voltage effect of the differential amplifier.
Patent TW-586967-B (TW)
Title: Particle grinding device
Inventor: LI WEN-YU
IPC: B02C17/16
Filed: 2003-07-24
Granted: 2004-05-11
Abstract: Disclosed is a particle grinding device, characterized in a separation structure for separating particles from grinding media. The separation structure includes two sets of interlacing, coaxial blades. Adjacent edges of the outer and inner blades form a gap therebetween, serving as a particle sieving mechanism. The edges of the inner blades are higher than an inner annular portion, such that the space between the outer blades and the inner annular portion of the neighboring inner blades is greater than that gap. The annular portion of the inner blades are formed with plural guide openings, such that the particles that has a size small enough to pass through the gap can enter the space of lager dimension and then discharged through the guide openings.
Patent TW-I257730-B (TW)
Title: Power supply system and electronic device comprising the same
Inventor: BITOH HIROYASU
IPC: H02M3/07
Filed: 2003-09-29
Granted: 2006-07-01
Abstract: A power supply system generates drive power and supplies the drive power to a load. The system comprises an electric power generating section (100) having at least a power generation section (20) which has a fuel cell that generates electricity-generation power by use of a power generation fuel. An external power supply connection section (90) connects an external power supply supplying externally supplied power. An operation control section (70) comprises a section for setting the power generation section in a standby state on the basis of the externally supplied power supplied from the external power supply when at least the external power supply is connected to the external power supply connection section (90).
Patent TW-I268609-B (TW)
Title: Formation method of SiGe HBT
Inventor: FAN CHENG-WEN
IPC: H01L29/737
Filed: 2003-10-31
Granted: 2006-12-11
Abstract: A method for forming a SiGe HBT, which combines SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second polysilicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.
Patent TW-I230680-B (TW)
Title: Article turning-round apparatus
Inventor: OHIRO MASAYA
IPC: B65G47/86
Filed: 2003-11-11
Granted: 2005-04-11
Abstract: The object of the present invention is to provide an article turning-round apparatus that can turns round a diaper at a high velocity without restriction imposed on the positions at which the diaper are loaded and unloaded. The solution of the present invention is a turning-round apparatus (1A), comprising a rotary disk (2) rotating about a first shaft (5), a number of placed disks (16) fitted to a peripheral edge part (2a) of the rotary disk (2), a first conveyor belt (3) conveying diapers (50) to a first portion (6), and a second conveyor belt (4) conveying the diapers (50) from a second portion (7), the placed disks (16) further comprising first placed disks (16a) revolving about the peripheral edge part (2a) of the rotary disk (2) and second placed disks (16b) rotating on their axes at the peripheral edge part (2a) while revolving about the peripheral edge part (2a) of the rotary disk (2), wherein the placed disks (16a) and (16b) receive the diapers (50) sequentially at the first portion (6), and the second placed disks (16b) rotate on their axes at the peripheral edge part (2a) of the rotary disk (2) while the second placed disks (16b) are moved from the first portion (6) to the second portion (7).
Patent TW-I248114-B (TW)
Title: Photomask, and method and apparatus for producing the same
Inventor: NAGAMURA YOSHIKAZU
IPC: G03F7/20
Filed: 2003-11-17
Granted: 2006-01-21
Abstract: A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a halt tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.
Patent TW-I245314-B (TW)
Title: Method for producing III-V group compound semiconductor layer, method for producing semiconductor light emitting element, and vapor phase growing apparatus
Inventor: NAKAMURA JUNICHI
IPC: H01L33/10
Filed: 2004-01-08
Granted: 2005-12-11
Abstract: A method for producing a III-V group compound semiconductor layer comprises the steps of: forming a first III-V group compound semiconductor layer on a substrate in a reaction chamber; and supplying a III group material gas to the reaction chamber before or after the step of forming the first III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber.
Patent TW-I339539-B (TW)
Title: Operation of a forward link acknowledgement channel for the reverse link data
Inventor: SARKAR SANDIP
IPC: H04L1/08
Filed: 2004-01-09
Granted: 2011-03-21
Abstract: An acknowledgement method in a wireless communication system. Initially, a reverse supplemental channel (R-SCH) frame is received at a base station. The base station then transmits an acknowledgement (ACK) signal if quality of the received R-SCH frame is indicated as being good. A negative acknowledgement (NAK) signal is transmitted only if the received data frame is indicated as being bad but has enough energy such that, if combined with energy from retransmission of the data frame, it would be sufficient to permit correct decoding of the data frame. If the best base station is known, the acknowledgement method may reverse the transmission of the acknowledgement signals for the best base station so that only NAK signal is sent. A positive acknowledgement is assumed in the absence of an acknowledgement. This is done to minimize the transmit power requirements. 
The ACK/NACK message is encoded with a block code and spreaded with a spreading code.