baber/WOPTO huggingface dataset:
Patent JP-H10145562-A (JP)
Title: Document image data reader
Inventor: ONO SHINGO
IPC: H04N1/04
Filed: 1996-11-15
Abstract: PROBLEM TO BE SOLVED: To provide a reader improved in reliability in electric connection, firm in structure and excellent in operability without enlarging its size by providing a sensor block for reading image data in an original with an auto-mode sensor and a handy-mode sensor on the surface opposed to a roller block and on its opposite surface respectively. SOLUTION: A connector 40 is respectively connected to a handy-mode sensor unit 12 and an auto-mode sensor unit 11 by FPCs 42 and 43. Then, a signal from a circuit substrate 38 and a power source are transmitted to a sensor block 10 side and the signal from the sensor block 10 side is received. A paper sensor 44 detecting presence or absence of original insertion is provided at a roller block 30 side. In a document image data reading device 1, the sensor block 10 and the roller block 30 are used without separation at the time of usage in handy-mode or auto-mode in order to integrally storing the sensor block 10 and the roller block 30.
Patent JP-2001121312-A (JP)
Title: Cutting tool of surface-coated cemented carbide excelling in surface lubricity against chip
Inventor: OSHIKA TAKATOSHI
IPC: C23C14/06
Filed: 1999-10-27
Abstract: PROBLEM TO BE SOLVED: To provide a cutting tool of surface-coated cemented carbide that is free from cutting edge chipping and the like and exhibits appreciable cutting performance for a long time even when used in high-speed cutting on a difficult- to-cut material. SOLUTION: In addition to a hard coating layer having a mean thickness of 3 to 30 μm, the cutting tool has a titanium oxide layer, as an outermost substrate layer, having a thickness of 0.1 to 3 μm and fulfilling a V/Ti atomic ratio of 1.2 to 1.7 in a composition formula: TiOV, measured by an Auger spectroscopic analyzer for the middle in the thickness direction; and a double layer of at least one of zirconium carboxide, zirconium nitroxide and zirconium carbonitride, as an outermost layer, having a thickness of 0.05 to 3 μm and fulfilling a Z/Zr atomic ratio of 0.40 in respective composition formulae: ZrC1-Z (O)Z; ZrN1-Z(O)Z, and Zr[C,N]1-Z(O)Z, where (O) is diffused oxygen from the outermost substrate layer, measured by an Auger spectroscopic analyzer for the middle in the thickness direction, which layers and both formed by a chemical/physical vapor deposition process.
Patent JP-H01145647-A (JP)
Title: Direct positive photographic sensitive material
Inventor: INOUE AKIYUKI
IPC: G03C8/08
Filed: 1987-12-02
Abstract: PURPOSE:To obtain high max. image density, low min image density and contrasty toe gradation by incorporating a specified compd. into a sensitive material contg. silver halide particles of silver bromide, silver chloride, silver iodobromide or silver chlorobromide contg. one kind of metal such as Mn, Cu, Zn or Cd. CONSTITUTION:A compd. represented by formula I is incorporated into a photographic sensitive material contg. internal latent image type silver halide particles of silver bromide, silver chloride, silver iodobromide, silver chlorobromide or silver chloroiodobromide contg. at least one kind of metal selected among Mn, Cu, Zn, Cd, Pb, Bi and the group VIII metals of the periodic table. In formula I, Z<1> is a group of nonmetallic atoms. forming a hetero ring, R<1> is an aliphat. group, X is =C< or -N<, Q is a group of nonmetallic atoms. forming a nonarom. hydrocarbon ring, Y is a counter ion for charge balance and n is a number attaining the charge balance. Sufficiently high max. image density, low min image density and contrasty toe gradation are obtd.
Patent JP-H07157872-A (JP)
Title: Sputtering device
Inventor: INOUE YASUTAKE
IPC: H01L21/203
Filed: 1993-12-06
Abstract: PURPOSE:To control the coverage of the side wall of a contact hole with sputtered atoms and form a film without repeating the impression and stop of a voltage in each shot by providing a shutter mechanism to control the exposure dose of the sputtered atom to a collimator. CONSTITUTION:Plural regular hexagonal transmission holes 2a are provided to a collimator 2 in the form of honeycomb. A shutter mechanism 3 has a rotating shaft 3a piercing horizontally through the holes 2a and pivoted and a shielding plate 3b movable in linkage with the rotation of the shaft 3a and supported by the shaft 3a to shield the hole 2a. The shielding plate 3b is moved in linkage with the rotation of the shaft 3a of the shutter mechanism 3, and the respective holes are controllably opened or closed. Since the shielding plate 3b is capable of opening or closing the hole to an optional angle between 0 and 90 deg., the exposure dose of the atom sputtered from the target 1 to a semiconductor substrate 6 is optionally adjusted.
Patent JP-H01145487-A (JP)
Title: Piping made of aluminum
Inventor: ISHIKAWA KAZUNORI
IPC: F16L58/00
Filed: 1987-12-01
Abstract: PURPOSE: To improve lasting quality for corrosion-resistance of tubing of which inner and outer surfaces are clad by defining maximum Zn density in Zn diffusion pattern and an extent of Zn diffusion section to specified value. CONSTITUTION: Inferior A1 alloy containing Zn is a cover member. In tubing of which inner surface, outer surface, or inner and outer surfaces of a tubular body having a core member of superior A1 or A1 alloy are clad by the cover member, maximum Zn density in Zn diffusion pattern is 0.2 to 1.5 wt.%. A distance from a depth showing the maximum Zn density to a border section between the core member and the cover member is more than 20 μm. A distance from a depth showing the maximum Zn density to the deepest Zn diffusion section is more than 30 μm, and further a Zn diffusion depth is less than 40% of a thickness of the duct. Thereby potential diffusion between the cover member and the core member is more than about 30 mV to restrain a sacrifice layer from wearing.  Work for sacrificing can be maintained for a long time, and a reduction of material intensity with a reduction of the thickness of the duct. Which is caused by corrosion, can be restrained, and influence to intensity for pressure resistance can be reduced.
Patent JP-H05144947-A (JP)
Title: Manufacture of semiconductor device
Inventor: SHIMIZU OSAMU
IPC: H01L21/3205
Filed: 1991-11-20
Abstract: PURPOSE:To make a step of a contact window formed in a multilayer interconnection layer equal and to make the coverage of a conductive layer constant by forming an insulating layer in a semiconductor substrate wherein a pattern with a recessed part and a projecting part is formed on a surface and by making a surface height of an insulating layer in the recessed part and a surface height of a insulating layer in the projecting part equal. CONSTITUTION:An SiO2 layer 2 is formed on an Si substrate 1, a poly-Si layer 3 and an SiO2 layer 4 are formed thereon as a projecting pattern. Then, after an Al layer 5a is formed on an SiO2 layer 4a without the poly-Si layer 3 and an Al layer 5b is formed on an SiO2 layer 4a with the poly-Si layer 3, an SiO2 layer 6 and an SOG layer 7 are formed to flatten a surface thereof. A contact window 9a for exposing the Al layer 5a by etching a PSG layer 8 and the SiO2 layer 6 and a contact window 9b for exposing the Al layer 5b are formed. Thereby, steps of the contact window 9a and the contact window 9b becomes equal both thereof can be buried with an excellent coverage.
Patent JP-H02153010-A (JP)
Title: Smelting reduction furnace
Inventor: HAMAI KAZUO
IPC: C21B11/00
Filed: 1988-12-02
Abstract: PURPOSE:To improve erosion resistance and to prevent lowering of the utilizability of slag by constituting lining refractory for a smelting reduction furnace, in which iron ore is reduced by blowing oxygen to produce pig iron, of carbon-bonding graphite-containing neutral brick. CONSTITUTION:The iron ore is supplied into the smelting reduction furnace A together with reducing agent and slag making agent, and the oxygen or the oxygen and carbonaceous material are blown into the furnace through a top blowing lance L and bottom blowing nozzles N, etc. By this method, the smelting reduction is executed to the iron ore to obtain the pig iron. The lining refractory in the above smelting reduction furnace A is constituted of the carbon-bonding graphite-containing neutral brick 1. Then, the lining of the furnace wall positioned on and below molten slag S surface under blowing operational condition, is desirable to use the carbon-bonding graphite-containing neutral brick containing 75-90wt.% Al2O3, 5-20% C, 2-6% Al or if necessary, further containing 2-10% SiC. By this method, the erosion resistance of the lining refractory is improved and the service life thereof is extended and by avoiding mixture of MgO, etc., into the slag, the utilizability thereof can be improved.
Patent JP-H09145778-A (JP)
Title: Test fixture for high-frequency ic
Inventor: YUMIKURA TADAAKI
IPC: G01R31/26
Filed: 1995-11-24
Abstract: PROBLEM TO BE SOLVED: To measure the characteristics of a high-frequency IC to be measured which is increased in the number of pins with high accuracy by closely adhering the lead wires of the IC to conductive lines while the lead wires are held between two substrates which are constituted by respectively sticking conductor plates connected to a grounding line to one surfaces of dielectric bodies. SOLUTION: A substrate 1 which is constituted by sticking a conductor plate 4 connected to a grounding potential to one surface of a platy dielectric body 5 and forming conductive lines (strip lines) of the number corresponding to the number of the lead wires 7 of an IC 6 that is a device to be measured on the other surface of the dielectric body 5 and another substrate 2 which is constituted by sticking a conductive plate 4 connected to the grounding potential to one surface of a platy dielectric body 5 so that the other surface of the dielectric body 5 can be faced to the substrate 1 are formed. At the time of measuring the characteristics of the IC 6, the substrates 1 and 2 are closely adhered to each other so as to hold the lead wires 7 of the IC 6 between the substrates 1 and 2 while the wires 7 are brought into contact with the conductive lines 3.  When the substrates 1 and 2 are adhered to each other, the deterioration of the isolation characteristic is reduced and the characteristics of the IC 6 can be measured with high accuracy even when the lead wires 7 are arranged at narrow intervals, because the conductive lines 3 are shielded by the two conductive plates 4 through the dielectric bodies 5.
Patent JP-H02152046-A (JP)
Title: Magneto-optical medium
Inventor: YONEDA MIKIO
IPC: G11B11/10
Filed: 1988-12-02
Abstract: PURPOSE:To prevent blisters of a medium when temp. and humidity rapidly change after the medium has been exposed for a long time under the condition of high temp. and high humidity and to improve reliability of the medium by incorporating one metal selected from a group consisting of Nb, Ta, Zr and Mo into the protective film of the magneto-optical recording medium in which writing or reading is performed by irradiating beams. CONSTITUTION:The protective layer (dielectric layer) 2 is formed on a transparent substrate 1 and a magneto-optical recording layer 3 is formed thereon, in which writing and reading of informations is performed by irradiating light. Then the protective layer (reflecting layer) 4 is formed on the recording layer 3, on which a resin overcoating layer 5 is formed. The protective layers 2, 4 contain at least one metal selected from a group consisting of Nb, Ta, Zr and Mo. The amount of the metal added into the protective layers is 1-30 atomic%. The protective layers 2, 4 are specified by thin films of nonalkali glass and/or silicon nitride.
Patent JP-2000129938-A (JP)
Title: Dwelling house
Inventor: AKEHI KATSUTOSHI
IPC: E04H1/02
Filed: 1998-10-27
Abstract: PROBLEM TO BE SOLVED: To form a modest and graceful atmosphere in an entrance and effectively utilize the space above the entrance by arranging an entrance passage under the floor of a building, extending the entrance passage from a road to the backward of the building, and arranging the side of the entrance passage facing the outside. SOLUTION: An entrance passage is arranged under the floor of a building, the entrance passage is extended from a road to the back of the building, and the side of the entrance passage is arranged facing the outside. For example, this dwelling house is formed of a two-storied building 1 in plan view built in a building site arranged on the east side of a road, a parking space 2 arranged on the south side of the site adjacent to the building 1, and a court 3 arranged in the center of the site. The angle part on the southwest side of the building 1 is laid in partially cutout state, an entrance porch 4 is arranged there, and an entrance 5 is arranged in the deep part of the entrance porch 4. The entrance door 5a of the entrance 5 is provided opposite to the road side, and the entrance porch 4 is connected to the road by a stair-like approach 6.
Patent JP-H10256221-A (JP)
Title: Spin drier for semiconductor 256m drum
Inventor: HAMAYA SUMIO
IPC: H01L21/304
Filed: 1996-10-11
Abstract: PROBLEM TO BE SOLVED: To obtain a spin drier which completely removes a watermark on the surface of a wafer and which removes remaining carbon by a method, wherein a mixed solution of isopropyl alcohol and ultrapure water or a vapor is sprayed on both faces of the wafer in a nitrogen gas atmosphere. SOLUTION: In a 256M DRAM line, a plurality of wafers 10 are cleaned by ozonized ultrapure water (at 75 deg.), the inside of a glove at a spin drier is filled with ultraclean nitrogen (N2 ) gas 1, and IPA water (composed of about 40% of isopropyl alcohol and of about 60% of ultrapure water), or an IPA vapor (at about 83 deg.C) 2 is sprayed according to a jet spray system on both faces of the wafers 10 inside a nitrogen gas atmosphere. Then, a wafer housing jig 6 is turned by 90 deg., ad the rotor of the spin drier is turned. Since one hundred percent of a watermark is removed, remaining carbon is not existent, and the yield of the wafers can be enhanced.
Patent JP-2000133165-A (JP)
Title: Fluorescent surface member and image forming device using the same
Inventor: FUJIMURA HIDEHIKO
IPC: H01J29/28
Filed: 1998-10-27
Abstract: PROBLEM TO BE SOLVED: To stabilize the electron emitting characteristic of an electron emitting element while lowering oxygen as the gas for deteriorating the electron emitting element and water by forming a metal back of a metal-backed oxide preventing metal layer formed by laminating on an aluminum layer with Au or Pt or the alloy thereof. SOLUTION: A phosphor 4, an aluminum metal back layer 5 having 100 nm of film thickness, and a platinum layer 6 having 10 nm of film thickness are laminated on a glass substrate 1. This laminated structure is heated at 450 deg.C by an incinerator for 10 minutes in the atmospheric air. A fluorescent surface member is set in a pre-treatment chamber, and baked at 300 deg.C for 10 hours, and thereafter, temperature of the fluorescent surface member is lowered to the room temperature, and carried into a measurement chamber. Accelerating voltage at 10 kV is applied to the fluorescent surface member, and electron is irradiated to the fluorescent surface member by an impregnated type cathode, and emission current is regulated so as to obtain 200 cd of luminance, and electron is irradiated to the fluorescent surface.  Film thickness of a layer of Au or Pt or the alloy thereof is regulated at 5-30 nm.
Patent JP-H03165246-A (JP)
Title: Heater controller for oxygen concentration detecting sensor
Inventor: SUGINO TADASHI
IPC: G01N27/12
Filed: 1989-11-25
Abstract: PURPOSE:To converge the resistance value of a heater to a target resistance value in a short period of time by varying the correction rate of the supply electric power of the heater according to whether the temp. of the heater is in a state indicating an abrupt change or not. CONSTITUTION:This controller has a means 16 for judging the state of the heater and a means 17 for increasing the correction rate of the electric power. The means 16 for judging the state of the heater judges whether the temp. of the heater 13 is in the state indicating the abrupt change or not. The means 17 for increasing the correction rate of the electric power increases the pre scribed correction rate of the supply electric power to the heater 13 from an electric power control means 15 when the temp. of the heater 13 is judged to be in the state indicating the abrupt change. Namely, the supply electric power to the heater 13 is largely varied and controlled by the large correction rate allowing for an abrupt change in the resistance value of the heater. The resistance value of the heater is brought to the target resistance value in a short period of time in this way.
Patent JP-H07313061-A (JP)
Title: Flavor coffee bean and coffee powder
Inventor: SHIMIZU TAISHIN
IPC: A23F5/14
Filed: 1991-09-09
Abstract: PURPOSE:To provide a method for simultaneously enjoying coffee taste and other flavors. CONSTITUTION:Coffee beans are roasted, and various flavors and smell are subsequently given to the roasted coffee beans. Thereby, the coffee, the other flavors and the other smell can simultaneously be enjoyed.
Patent JP-H03164145-A (JP)
Title: Grain flour food
Inventor: NISHIMOTO KIYOSHI
IPC: A23L7/109
Filed: 1989-11-24
Abstract: PURPOSE:To a grain flour food excellent in springiness and chewiness by incorporating fine deodorized whole fat soybean powder and edible mucilaginous substance into a grain flour raw material. CONSTITUTION:The objective food obtained by incorporating preferably 0.1-100 pts.wt. total amount of fine deodorized whole fat soybean powder having a smaller particle size than that passing through a 200-mesh screen and an edible mucilaginous substance into 100 pts.wt. grain flour raw material.
Patent JP-S63157768-A (JP)
Title: Horizontal submerged arc welding method
Inventor: ASADA IKUO
IPC: B23K9/18
Filed: 1986-12-22
Abstract: PURPOSE:To prevent the occurrence of a blowhole by performing the tack- welding in a groove at the opposite side to the main welding side and providing the void between the base of the tack-welding and a groove root part and performing the main welding so as to hole the void. CONSTITUTION:Materials 1 and 1a to be welded are butted against each other and tack-welded 2 at the K or X groove, etc., and the void 5 is provided between the base of the tack-welding 2 and the groove root part of the materials to be welded at the opposite side to the main welding side to perform a first layer welding 3 of the main welding at the opposite side. After the main welding is finished, the tack-welding and the root part are taken away at the gouging and then, the welding is performed. In this way, even if a source to generate gas such as the water content or rust, etc., exists on the groove root part, the blowhole is prevented from being generated on a welded zone of the first layer.
Patent JP-2001126561-A (JP)
Title: Apparatus for winding glass yarn
Inventor: KUWABARA SHIGENORI
IPC: H01B13/08
Filed: 1999-10-27
Abstract: PROBLEM TO BE SOLVED: To provide an apparatus for winding a glass yarn compactly around a conductive line by eliminating the drawing tension differences between a plurality of glass fiber fluxes constituting the glass yarn. SOLUTION: An apparatus for winding a glass yarn comprises a hollow shaft wound with the glass cheese drawn by winding the glass fibers around a cylindrical bobbin, guide rod rotatable along the periphery of the hollow shaft to guide the glass yarn drawn from the glass cheese, and flyer with a guide for winding the glass yarn. A compression roll is provided to press the glass yarn drawn from the glass cheese by cooperating with it.
Patent JP-H11265316-A (JP)
Title: Memory system and method for accessing memory system
Inventor: JOFFE ALEXANDER
IPC: G06F12/00
Filed: 1998-10-27
Abstract: PROBLEM TO BE SOLVED: To provide a memory system of which throughput is improved. SOLUTION: The memory system includes plural memories 110(-UL), UR, DL, DR, plural address buses mAddr(-U), D and plural data buses Data-L, R. At least one data bus is connected to memories connected to respectively different address buses. Each memory can execute pipe-lined reading operation so that when data are read out by one reading operation, an address for reading out the other data can be provided to the memory. In some examples, plural memories are mirror image memory groups. All memories in each group store the same data. When it is preferable to simultaneously read out data stored in one of the memories, a reading access to the mirror memory can be executed.
Patent JP-2000134937-A (JP)
Title: Power supply
Inventor: MISHIMA MASANORI
IPC: H02M7/48
Filed: 1998-10-27
Abstract: PROBLEM TO BE SOLVED: To detect the abnormality quickly while keeping almost constant a reference value to be compared with a detected value which varies depending on whether there is the abnormality or not. SOLUTION: A capacitor C2 is connected between output terminals of a rectifier DB for rectifying the power from an AC power supply Vs. Between the output terminals of the rectifier DB, a series circuit of a primary winding of a leakage transformer T1 and a switching element Q1 is also connected. The switching element Q1 forms a series circuit together with a switching element Q2 and a detection resistor Rsc, and this series circuit is connected between terminals of a smoothing capacitor C1. The switching elements Q1, W2 are alternately turned on and off by a driving circuit DV. The voltage induced in a winding for detection installed in the leakage transformer T1 and the voltage across the smoothing capacitor C1 are added by an adder circuit ADD and the result is compared with a reference voltage Vk to detect the abnormality.
Patent JP-2001127558-A (JP)
Title: Semiconductor device
Inventor: TAKEUCHI ATSUSHI
IPC: H03F3/45
Filed: 1999-10-28
Abstract: PROBLEM TO BE SOLVED: To reduce the chip area of a semiconductor device and to shorten the development period of the semiconductor device. SOLUTION: A phase compensation circuit 12A where an NMOS transistor(TR) 15 and a capacitor 13 are connected in series is connected to a negative feedback amplifier circuit where a feedback circuit 11 is connected to an operational amplifier 10. The resistance of the NMOS TR 15 depends on a bias circuit 16 that supplies a bias voltage VB corresponding to selection control signals SC1-SCn to the gate of the NMOS TR 15. A semiconductor device prototype provided with a feedback amplifier circuit with a phase compensation circuit as described above is built, the feedback amplifier circuit equipped with the phase compensation circuit of the semiconductor device is in operation to decide the value of the selection control signal and the semiconductor device whose selection control signal is set to the decided value is mass-produced.