baber/WOPTO huggingface dataset:
Patent JP-H0736366-A (JP)
Title: Link processing method for programmable controller
Inventor: FUJIKAWA HIDEHIKO
IPC: G05B19/05
Filed: 1993-06-25
Abstract: PURPOSE:To provide a link processing method for programmable controller in which the influence of dispersion of scanning time can be minimized, and processing can be performed by a balance according to an user. CONSTITUTION:A CPU 1 transfers the data of a preset copying capacity amount per scan from the buffer 10 of a link unit 7, when it receives the notification of receipt completion from the link unit 7, and the data is copied on a RAM 2. When the copying of all the received data area is not completed in this scan, the following copy sender head address and copying designation head address are saved in a work area, and waited to the following scan. Thereafter, the copying processing and address saving processing are repeated every scan until the copying of all the received data area is completed. When the copying of all the received data area is completed, the following transmission request is issued, and receiving processing is ended.
Patent JP-H107594-A (JP)
Title: Production of 1-hexene
Inventor: OGURI MOTOHIRO
IPC: C07C11/107
Filed: 1996-06-17
Abstract: PROBLEM TO BE SOLVED: To produce 1-hexene without lowering the selectivity of the product or causing the entrainment of a deactivation agent to unreacted ethylene by trimerizing ethylene in the presence of a chromium-based catalyst and completely deactivating the catalyst with a deactivation agent in two stages. SOLUTION: Ethylene is trimerized in the presence of a chromium-based catalyst composed of a chromium compound and an alkyl metal compound. After completing the trimerization reaction, a deactivation agent is added to the liquid reaction product in an amount of >=1 mol-equivalent based on the chromium compound in the chromium-based catalyst and <3 mol-equivalent based on the total molar number of metals in the chromium-based catalyst to effect the deactivation of the chromium compound in the chromium-based catalyst. Thereafter, 3-2,000 mol-equivalent of a deactivation agent is added to the liquid reaction product to effect the complete deactivation of the chromium-based catalyst and obtain the objective 1-hexene useful as a comonomer for a linear low-density polyethylene or a raw material for plasticizers.
Patent JP-S5380231-A (JP)
Title: Formation of image
Inventor: TAKAHASHI HIDEO
IPC: G03G13/08
Filed: 1976-12-24
Abstract: PURPOSE:To prevent the occurrence of soil and offensive ordor due to development by spraying an ink mist charged to the opposte polarity to that of the record medium on which an image developed with a colorless resin powder is transferred.
Patent JP-H04354113-A (JP)
Title: Chip type solid-state electrolytic capacitor
Inventor: SANO SHINJI
IPC: H01G9/012
Filed: 1991-05-30
Abstract: PURPOSE:To obtain a chip type solid-state electrolytic capacitor which can be miniaturized and improve tan delta characteristics and the like. CONSTITUTION:A capacitor element 1 from which an anode lead 2 is led out is covered with a resin sheath 4, so as to expose the tin part 5 of the anode lead 2 and the end portion 6 on the side opposite to the leading-out side of the anode lead 2. The tip part 5 of the anode lead 2 is covered with an anode conducting layer 8, and the end portion 6 of the element 1 is covered with a cathode conducting layer 10. The chip type solid-state electrolytic capacitor having the above structure is characterized by having a conductor 7 connected with the tip part 5 of the anode lead 2.
Patent JP-S5677078-A (JP)
Title: Manufacture of seam welded steel pipe
Inventor: KONDOU MASATOSHI
IPC: B23K11/08
Filed: 1979-11-30
Abstract: PURPOSE: To make it possible to improve quality of platings performed after seam welding, by grinding and cleaning the bead section and electrode contacting section at the outer surface of tubes formed by resistance welding.  
     CONSTITUTION: Cutting tool BT and wire brush WB are installed at the downstream side of squeeze roll SR in the manufacturing process of seam welded steel pipe. Bead B formed at the welded part of seam welded steel pipe P delivered from squeeze roll SR is removed after cutting by cutting tool BT and then passes below wire brush WB. Wire brush WB contacts with the bead cutting part at the outer circumference of tube P and the part with which contact tips ccl and ccr contact, and its vicinity and makes high speed rotation. At this time, remained grinding dust are removed, minute unevennesses, holes and grooves formed during the course of welding are repaired, and metal grains deposited on the surface of tube P are removed. By this, the surface of tube P is flattened and uniformalized, and thus quality of plating can be improved. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S5487533-A (JP)
Title: Optical axis adjusting mechanism
Inventor: TSURUOKA MICHIHIKO
IPC: G02B7/00
Filed: 1977-12-23
Abstract: PURPOSE: To facilitate adjustment work and reduce space at the time of multiple arraying by so arranging the mechanism that the adjust screws which perform mounting adjustment in the vertical and horizontal directions of light emitting elements and photo detectors to be operated from the same direction.  
     CONSTITUTION: One side of the arm of a holder 24 which bands a light emitting- photodetector 27 is turnably supported to a base 1 of a flat plate by way of a pin 12. The holder 24 is kept pulled to the face of the base 1 by a compression spring 16. When the screw 18 having been screwed into the base 1 is tightened, the holder 24 displaces in the arrow (d) direction (horizontal direction) about the pin 12. Next, when the screw 19 is turned, the holder is turned to the arrow (e) or (f) side by an eccentric cam 22, by which the light emitting-photo detector 27 is displace in the perpendicular direction together with the holder 24. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-S5857630-A (JP)
Title: Magnetic recording medium
Inventor: KUBOTA ISAO
IPC: G11B5/64
Filed: 1981-09-30
Abstract: PURPOSE:To keep all bands at a high level of reproduced output and to reduce noises, by selecting the specific surface area, the coercive force, etc. for the magnetic powder of the upper and lower magnetic layers which have magnetic metallic thin films on the surface, respectively. CONSTITUTION:The 1st magnetic layer 4 containing the magnetic powder of at least one of Co-coated iron oxide or CrO2 of 20-30m<2>/g specific surface area and obtained by a BET process is formed on a nonmagnetic substrate 1 along with the 2nd magnetic layer 5 containing the magnetic powder of at least one of the Co-coated iron oxide or CrO2 of 30-50m<2>/g specific area and obtained by a BET process. Then a magnetic metallic thin film layer 7 of Co, etc. is formed on the surface of the layer 5 by an oblique vapor deposition process, etc. At the same time, the coercive force of the layer 5 is set larger than the layer 4. And the coercive force of the layer 7 is set larger than that of the layer 5.
Patent JP-S6132626-A (JP)
Title: Transmission device
Inventor: TERADA MAKOTO
IPC: H04B3/50
Filed: 1984-07-24
Abstract: PURPOSE:To add the quantity of shunting loss to a load side accurately and allow the information signal of a slave station side to contain the quantity of shunting to the load side at the time of origination, and preform signal transmission in consideration of whether a change-line propagation state is made or not by adding a transformer to a slave-station transmitter (receiver). CONSTITUTION:The transformer 50 measures a current shunt to the load 6 owing to the discharging of a capacitor 51 and considers the result for the transmitter (receiver) 5, thereby adding a sent signal from a master station side to information on its load sent from its terminal. When data is transmitted from the slave station side to the master station side, the slave station side receives the measured value from a solid- state meter 7 at a data transmission request and the transmission control circuit TCC of the slave-side transmitter (receiver) 5 makes the measured value into a pulse train, which is sent to a thyristor gate control circuit GCC as a trailing stage. A thyristor module 53 receives the output pulses of the gate control circuit GCC and turns on, and a free oscillation pulse is sent out to an external circuit from the capacitor 51 and a reactor 52 according to the number of times of turning-on operation. When the load is connected to the opposite side of a power source, pulses are shunt even to the load side from the capacitor 51 and a current flows even to the primary side of CT50-a.
Patent JP-S6315616-A (JP)
Inventor: MORIYA SHIGEO
IPC: H02H3/093
Filed: 1986-07-04
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6134884-A (JP)
Inventor: ITO SUSUMU
IPC: H02M7/539
Filed: 1984-07-26
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0448661-A (JP)
Title: Gaalas light emitting diode and its manufacture
Inventor: UNNO TSUNEHIRO
IPC: H01L21/208
Filed: 1990-06-14
Abstract: PURPOSE:To acquire a GaAlAs-LED which increases light emitting output greatly by realizing constitution whose AlAs mixed crystal ratio is the lowerest at an area near a p-n interface. CONSTITUTION:A GaAlAs-LED has a hetero structure which is formed by successive epitaxial growth of an n-type GaAlAs layer 2 having AlAs mixed crystal ration profile and a p-type GaAlAs layer 3 on an n-type GaAs substrate and the n-type GaAs substrate is removed thereafter. A circular n-side electrode 1 is formed on a surface of the n-type GaAlAs layer 2 of an epitaxial wafer whose substrate is removed, and a p-side part electrode is formed on a rear of the p-type GaAlAs layer 3. AlAs crystal ratio is the lowerest in an area near a p-n interface, and profile without sharp hetero junction near a p-n interface is provided. When a current is made to flow, light emission and recombination are realized at the p-n interface 5, light toward a surface through the n-type GaAlAs layer 2 is output to the outside as it is and light toward a rear through the p-type GaAlAs layer 3 is reflected at the rear without absorption and can be output to the outside from a surface. As a result, high light emission output can be acquired.
Patent JP-S63225657-A (JP)
Title: Composite polymer composition
Inventor: TSUKUSHI MASAKUNI
IPC: C08K3/08
Filed: 1987-06-23
Abstract: PURPOSE:To obtain a polymer compsn. which gives molded products having good appearance and mechanical properties, an excellent rust inhibiting effect and fabricability, by blending a thermoplastics or a high-molecular elastomer with a metallic filer which has been treated with a water repellant. CONSTITUTION:A polymer compsn. is obtd. by blending a thermoplastics and/or a high-molecular elastomer (A) with 30-98wt.% (based on the combined amount of the components A and B) metallic filler (B) having a surface treated with a water repellant. The water repellent is used in an amount of 0.01-5pts.wt. per 100pts.wt. metallic filler. Examples of the water repellant are silane coupling agent, titanate coupling agent and silicone oil. The compsn. is suitable for use as a material for structural parts in electrical, electronic, mechanical and automative fields, for general industrial parts, furnishing and things of daily necessity.
Patent JP-S6049569-A (JP)
Title: Fuel cell power generating plant
Inventor: YOSHIDA SHIYUUICHI
IPC: H01M8/06
Filed: 1983-08-29
Abstract: PURPOSE:To follow in response to variation of load by supplying raw fuel to a fuel process unit through a control valve, and installing a fuel tank which stores reformed fuel between the fuel process unit and a fuel cell. CONSTITUTION:Raw fuel is supplied to a fuel process unit 1 comprising a reformer which reforms steam and a shift converter which converts carbon monoxide to carbon dioxide, through a control valve 2 which is controlled according to the variation of electric output through a control unit 10, and supplied to a fuel cell 5 through a fuel tank 9 which stores reformed gas. Lack of reformed gas caused by sharp increase of electric output is temporarily suplied from the fuel tank 9, and the control valve 2 is opened in advance. Sharp increase of load is followed by instantaneously supplying reformed gas required and responding ability is improved by setting flow rate or raw fuel.
Patent JP-H057235-A (JP)
Title: Telephone set
Inventor: IKEGAMI MASAHITO
IPC: H04M1/00
Filed: 1991-06-27
Abstract: PURPOSE:To provide a telephone set to save the waste and to make it easy to use by clearing whether or not a contrast adjusting action functions while a contrast adjusting key and a display lamp are effectively used. CONSTITUTION:In a telephone set 1 to variable-control the contrast of a display 13 for displaying information by a display control means 6, the set 1 is constituted of a key switch 17 for contrast adjustment operation, a display lamp 18 provided in correspondence to the key switch, a memory 7 to store a light-up pattern in accordance with the condition of the contrast, a variable-control means 4a to control a display control means to variable-control the condition of the contrast at the prescribed time interval when the operation of the key switch is detected and the key switch is operated continuously for the prescribed time, and a light-up control means 14 to obtain the light-up pattern corresponding to the contrast level set by a variable control means from a memory and light-up-control the display lamp based on the pattern.
Patent JP-S5946506-A (JP)
Title: Two-speed synchronization type position detecting device
Inventor: KITANI SUSUMU
IPC: G01D5/245
Filed: 1982-09-10
Abstract: PURPOSE:To enhance resolution and to make the measuring length long, by initially setting the output value of a synchro/digital converter on the coarse measuring side in a counter, and updating the contents of the counter with a synchro/digital converter on the fine measuring side as a reference at the time of acutal measurement. CONSTITUTION:A two speed synchronous generator 12 is connected to a body to be checked 1. A fine measuring side synchronous generator 13 and a coarse measuring side synchronous generator 14 are connected to said generator 12 through speed reducing gears. The output of a fine measuring side S/D converter 15 is inputted to a deviation correcting circuit 20. The output of a coarse measuring side S/D converter 16 is connected to a preset counter 17 and preset by a switch 19. The output from the switch 19 is also inputted to an error correcting circuit 18. At the time of actual measurement, the contents of the counter 17 is updated with the output of the converter 15 as a reference. The output of the counter 17 is inputted to the circuit 20. The deviation correcting value, which is set in a deviation setting device 21, is also inputted to the circuit 20. Then addition and subtraction are performed. Thus the circuit 20 can output the true value of the body to be measured 1. In this way, the resolution can be enhanced and the measuring length can be made long.
Patent JP-H0321838-A (JP)
Title: Temperature compensating circuit for force sensor
Inventor: TAKAHASHI JUNICHI
IPC: G01L1/22
Filed: 1989-06-19
Abstract: PURPOSE:To enable accurately temperature compensation over a wide range by forming temperature detecting elements whose characteristics vary linearly and curvedly with temperature on the surface of the strain dead zone part of a single-crystal plate. CONSTITUTION:On the surface of the strain dead zone of an Si substrate 6 which is the single-crystal substrate, a P-N diode 22 as the temperature detecting element which varies in characteristics linearly with temperature and a diffusion resistance 23 as the temperature detecting element varying curvedly are formed and then connected to constant current sources 24 and 25 respectively. Then voltages for temperature compensation are obtained from those detecting elements 22 and 23 and put together to perform the temperature compensation. Consequently, a characteristic curve is compensated over a wide range to perform the accurate temperature compensation.
Patent JP-S5380172-A (JP)
Title: Semiconductor device
Inventor: TAGUCHI MASAO
IPC: H01L29/06
Filed: 1976-12-25
Abstract: PURPOSE: To avoid occurrence of the punch-through phenomenon of MISFET as well as to increase the switching velocity, by providing a high impurity concentration region right under the gate and near the area with more depth than that of the junction of the source and drain. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S641789-A (JP)
Title: Production of sulfide fluorescent material film
Inventor: TODA TAKAO
IPC: C09K11/02
Filed: 1987-06-24
Abstract: PURPOSE: To obtain a sulfide fluorescent material film having excellent luminous intensity and efficiency and suitable especially for fluorescent film for EL element, by heating and evaporating a rare earth element, etc., and a sulfide in a gaseous atmosphere of phosphorus (compound).  
     CONSTITUTION: The objective fluorescent film is produced by heating and evaporating (A) a rare earth element consisting of Ce, Pr, Sm, Eu, Tb, dysprosium Fe, Ho or Tm or a compound containing the rare earth element and (B) a sulfide consisting of zinc sulfide, calcium sulfide, strontium sulfide or barium sulfide in (C) a gaseous atmosphere of phosphorus or a phosphorus compound consisting of phosphorus trifluoride, phosphorus pentafluoride, phosphorus trichloride or phosphorus pentachloride, thereby depositing a sulfide thin film containing phosphorus element and rare earth element on a substrate. 
     COPYRIGHT: (C)1989,JPO&Japio
Patent JP-H026965-A (JP)
Title: Developing material for developing electrostatic latent image
Inventor: WATANABE HARUO
IPC: G03G13/06
Filed: 1988-06-27
Abstract: PURPOSE:To improve ease of handling by holding a developer formed by dispersing a coloring agent into an electrical insulating org. material which is solid at ordinary temp. and makes a solid-liquid change by heating and cooling on a base body having an electrical conductivity. CONSTITUTION:The developer 2 formed by dispersing the coloring agent in the electrical insulating org. material which is solid at least at ordinary temp. and makes solid-liquid change by heating and cooling is held on the base body 1 having the electrical conductivity. This developer 2, therefore, functions as a wet process developer when the developer is brought into contact with an electrostatic latent image in a heated state. The ratio of the coloring agent is preferably 0.01-100g, more preferably 0.1-10g per 1l molten state of the electrical insulating org. material. The formation of the developer to a sheet or tape form is possible in this way and the ease of handling the developer is improved.
Patent JP-H08325016-A (JP)
Title: Bi-based superconducting material and its production
Inventor: YOSHIDA MASASHI
IPC: C01G29/00
Filed: 1995-05-30
Abstract: PURPOSE: To prevent the formation of nonsuperconducting materials and to increase critical current density by reducing and increasing the amts. of Sr and Ca in a Bi2 Sr2 CaCu2 Oz superconducting material by the same molar number, respectively, and carrying out heating to a temp. above the m.p. of the material under a specified partial pressure of oxygen and slow cooling. CONSTITUTION: Powdery starting materials prepd. so as to regulate the molar ratio of Bi:Sr:Ca:Cu to 2:(2-x):(1+x):2 (0.20<=x<=0.70) are heated to a temp. above the m.p. of a Bi2 Sr2 CaCu2 Oz superconducting material in an atmosphere under 0.002-0.06atm partial pressure of oxygen and they are cooled to a temp. below the m.p. by at least 20 deg.C at <=6 deg.C/hr cooling rate. A (Sr, Ca)Cu2 O2 phase and a Bi2 Sr2 CaO6 phase as nonsuperconducting materials are not formed and the objective Bi2 Sr2-x Ca1+x Cu2 Oz superconducting material having high critical current density is obtd.
Patent JP-H026886-A (JP)
Title: Air shower for article
Inventor: KURAMITSU EIJI
IPC: B08B5/02
Filed: 1988-06-27
Abstract: PURPOSE:To surely prevent resticking of dust to articles by forming a vent port for a vent duct to the side wall opposite to the suction port of a shower chamber and connecting the vent duct between said vent port and a pressurization chamber and providing a control valve to either of the vent duct and the pressurization chamber. CONSTITUTION:The air in the shower chamber 1 is sucked to a fan 22 through the suction port 25 when the fan 22 is driven. The air discharged from the fan 22 enters the pressurization chamber 23. The air is pressurized in this chamber and is blown out of a nozzle 24 toward the articles 27 in the chamber 21 to splash the dust sticking to the articles 27. On the other hand, the air of the chamber 23 flows partly into the chamber 21 through the vent port 32 and flows toward the suction port 25 to form the laminar flow to constitute side laminar flow, thereby pushing away the splashed dust over the entire area of the chamber 21 into the suction port 25. As a result, the possibility of resticking of the dust to the articles 27 is eliminated. The air flow is controlled to an approximately specified rate by controlling the air flow blown out of the nozzle 24 to the articles 27 by operating the control valve 34 if the sizes of the articles 27 vary.
Patent JP-S6049831-A (JP)
Title: Expendable pattern material for casting
Inventor: TOYAMA YUKIO
IPC: B22C7/02
Filed: 1983-08-26
Abstract: PURPOSE:To improve combustion of an expendable pattern and to prevent decrease in the temp. of a molten metal by preparing a material for the expendable pattern for casting of resin grains such as polyethylene, polystyrene or the like and a small amt. of magnesium. CONSTITUTION:5pts.wt. magnesium powdery particles are mixed with 100pts.wt. polyethylene, polystyrene and other resin particles. Or 5pts.wt. liquid material of magnesium is kneaded therewith to coat the surface of the resin particles with the magnesium soln. In either case incorporation of a slight amt. of magnesium into the resin particles suffices. The reason for limiting the amt. of the incorporation lies in that ignitable faculty is provided to the expandable pattern to be formed and that the pattern is not ignited by slight heat and moisture.
Patent JP-S641282-A (JP)
Title: Manufacture of semiconductor device
Inventor: ISHIKAWA TAKAHIDE
IPC: H01L21/302
Filed: 1987-06-23
Abstract: PURPOSE: To realize high performance through reduction of FET parasitic resistance and parasitic capacitance by forming the right and left asymmetrical gate recess.  
     CONSTITUTION: After forming an ohmic electrode 2 which will become a source drain electrode on a GaAs substrate 1, a resist pattern 3 to form a gate electrode is formed. Thereafter, the etching of gate recess is carried out, for example, by reactive ion etching or ion milling. In this case, irradiation of ion beam 4 with the predetermined gradient of irradiation angle realizes formation of gate recess 5 having a gradient in accordance with the inclination of ion beam 4 on the GaAs substrate 1. Namely, this etching method is the anisotropic etching method and therefore the gate recess 5 is formed asymmetrically to the right and left. Next, after forming the Schottky metal 6a for gate electrode to the entire part of wafer by the evaporation method, the gate electrode 6 is formed by the lift-off method. Such shape realizes low parasitic capacitance, low parasitic resistance, high breakdown strength, and high mutual conductance and thereby a high performance FET can also be realized. 
     COPYRIGHT: (C)1989,JPO&Japio