Patent GB-1019078-A (GB)
Title: Process for the production of a semiconductor assembly
IPC: H01L21/00
Filed: 1963-08-06
Abstract: <PICT:1019078/C6-C7/1> Semi-conductor material is chemically transferred to the lower surface of a semi-conductor carrier body 1 (e.g. a disc) from the upper surface of a heated semi-conductor powder support 2 (e.g. in pellet form) by means of a gaseous atmosphere consisting of or including a halogen or halogen compound, the body 1 being in thermal contact with the support 2 which is on a heater 3.  The gaseous atmosphere forms a gaseous compound with the semi-conductor material of the support and the compound is then decomposed to deposit semi-conductor material in compact form on the carrier.  Examples refer to depositing (a) ZnS on Si, (b) ZnS on GaP, (c) GaP on Si, (d) AIN on SiC, (e) Si on Si, (f) Si on ZnS, (g) GaAs on GaAs, (h) GaAs on Ge.  The use of support pellets comprising Ge, Si or other AIIIBV or AIIBVI compounds is also referre to.  Specified gaseous atmospheres for transferring Si are HCl, SiCl4, Cl2 or SiCl4+H2. Oxide may be previously removed from Si to be transferred and from a Si carrier by heating in H2.  For reactions (a), (b), (c), (g) and (h), an I vapour atmosphere diluted e.g. with argon may be used.  To prevent removal of material from the exposed upper face of a carrier 1 it may be covered with a plate of SiC, quartz or Al2O3 or may be coated with a layer of the oxide or carbide of the semi-conductor body.  The process may be used to form monocrystalline bodies.  Layers of different conductivity and/or of different conductivity type may be deposited in succession using a pellet formed in layers, Fig. 3 (not shown).  A pellet having a definite pattern of different doping materials, Fig. 4 (not shown), is used to transfer a doping pattern to a semi-conductor carrier. Any desired proportion of doping material may be provided by mixing suitable proportions of standard doped powders.  After the deposition has been completed the carrier may be removed, e.g. by grinding, to obtain the monocrystalline or compact layers alone.ALSO:<PICT:1019078/C1/1> Semi-conductor material is chemically transferred to the lower surface of a semi-conductor carrier body 1 (e.g. a disc) from the upper surface of a heated semi-conductor powder support 2 (e.g. in pellet form) by means of a gaseous atmosphere consisting of or including a halogen or halogen compound, the body 1 being in thermal contact with the support 2 which is on a heater 3.  The gaseous atmosphere forms a gaseous compound with the semi-conductor material of the support and the compound is then decomposed to deposit semi-conductor material in compact form on the carrier.  Examples refer to depositing: (a) ZnS on Si  (b) ZnS on GaP  (c) GaP on Si (d) AIN on SiC  (e) Si on Si  (f) Si on ZnS  (g) GaAs on GaAs  (h) GaAs on Ge. The use of support pellets comprising Ge, Si or other AIII Bv or AII BVI compounds is also referred to.  Specified gaseous atmospheres for transferring Si are HCl, SiCl4, Cl2 or SiCl4 + H2. Oxide may be previously removed from Si to be transferred and from a Si carrier by heating in H2.  For reactions (a), (b), (c), (g) and (h), an I vapour atmosphere diluted e.g. with argon may be used.  To prevent removal of material from the exposed upper face of a carrier 1 it may be covered with a plate of SiC, quartz or Al2O3 or may be coated with a layer of the oxide or carbide of the semi-conductor body. The process may be used to form monocrystalline bodies.  Layers of different conductivity and/or of different conductivity type may be deposited in succession using a pellet formed in layers (Fig. 3, not shown).  A pellet having a definite pattern of different doping materials (Fig. 4, not shown) is used to transfer a doping pattern to a semi-conductor carrier.  Any desired proportion of doping material may be provided by mixing suitable proportions of standard doped powders.  After the deposition has been completed the carrier may be removed, e.g. by grinding, to obtain the monocrystalline or compact layers alone.