baber/WOPTO huggingface dataset:
Patent TW-202209612-A (TW)
Inventor: KUO CHIA-PANG
IPC: H01L23/373
Filed: 2021-07-20
Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.
Patent TW-202141231-A (TW)
Title: Cooling apparatus
Inventor: BENDER SHAWN EMORY
IPC: H05K7/20
Filed: 2020-08-05
Abstract: An apparatus that first and second volumes are fluidly separated by a combination of a first second and a second sections, where the first section is insoluble to a cooling liquid and the second section is soluble to the cooling liquid. In the event of a leak of coolant liquid, the second sections dissolve, forming a fluid path from the first volume to the second volume. The coolant liquid may then escape the first volume in spaces that result from the dissolution of the second sections.
Patent TW-202209436-A (TW)
Title: Epitaxial silicon wafer, method for producing same, and method for producing semiconductor device
Inventor: HIROSE RYO
IPC: H01L21/20
Filed: 2021-08-18
Abstract: A method for producing an epitaxial silicon wafer 100 according to the present invention is characterized by comprising: a step wherein a surface 10A of a silicon wafer 10 is irradiated with a beam of cluster ions 12 including ions of SiHx (wherein x represents one or more integers selected from among integers from 1 to 3) and ions of C2Hy (wherein y represents one or more integers selected from among integers from 2 to 5) so as to form a modification layer 14, in which constituent elements of the cluster ion beam are solid-solved, in the surface layer part of the silicon wafer; and a step wherein a silicon epitaxial layer 16 is formed on the modification layer 14 of the silicon wafer. This method for producing an epitaxial silicon wafer 100 is also characterized in that the dose of the SiHx ions is set to 1.5 * 10<SP>14</SP> ions/cm2 or more.
Patent TW-202309844-A (TW)
Title: Defect feature threshold obtaining device, image detection system using the same and method
Inventor: LI TING-CING
IPC: G01N21/88
Filed: 2021-08-20
Abstract: A defect feature threshold obtaining device includes a clusterer and a defect feature threshold obtaining unit. The clusterer is configured for determining whether a plurality of defect feature values can be divided into a first group and a second group. The defect feature threshold obtaining unit is configured for: when the defect feature values can be divided into the first group and the second group, synthesizing the defect feature values of the first group and the defect feature values of the second group into a synthetic feature curve; and, obtaining a defect feature threshold of the synthetic feature curve.
Patent TW-202310505-A (TW)
Title: Electrical connector for charging prolonging the creepage distance formed along the insulating surface from the first conductive terminal to the second conductive terminal, as well as expanding the heat dissipation area
Inventor: Li ju-ping
IPC: B60L53/16
Filed: 2021-08-27
Abstract: The present invention relates to an electrical connector for charging, which is mainly coaxially provided with a first conductive terminal and a second conductive terminal in a connector base. An insulating seat is provided between the first and second conductive terminals. A corrugated structure is coaxially formed on the surface of the insulating seat. The corrugated structure includes more than one groove and more than one step. With the groove recessed into the surface of the insulating seat or the step higher than the surface of the insulating seat, the insulating surface from the first conductive terminal along the surface of the insulating seat to the second is greatly increased, thereby prolonging the creepage distance formed along the insulating surface from the first conductive terminal to the second conductive terminal, as well as expanding the heat dissipation area.
Patent TW-202204172-A (TW)
Title: 列印系統
Inventor: MAUCK JUSTIN
IPC: H01L51/00
Filed: 2014-03-13
Abstract: 本教示內容揭露一種氣體包體系統之各種實施例，該氣體包體系統可具有一氣體包體，該氣體包體可包括一列印系統包體及一輔助包體。在本教示內容之氣體包體系統之各種實施例中，一列印系統包體可與一輔助包體隔離。本教示內容之各種系統及方法可提供用於藉由利用可隔離包體之各種實施例來進行一列印系統之持續不斷的管理。例如，可在一輔助包體中執行用於一列印頭總成之管理的各種量測及維護製程步驟，該輔助包體可與一氣體包體系統之一列印系統包體隔離，藉此防止或最小化一列印製程之中斷。
Patent TW-202218179-A (TW)
Title: Nitride semiconductor light-emitting element
Inventor: MATSUKURA YUSUKE
IPC: H01L33/06
Filed: 2021-10-12
Abstract: A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element 1 includes an active layer 40 including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer 52 being formed on the active layer 40 and including a dislocation suppression structure 520 that stops or bends a dislocation D from the active layer 40; and a p-type contact layer 54 being formed on the dislocation suppression structure-containing layer 52 and having a thickness of not less than 10 nm and not more than 30 nm.
Patent TW-202227441-A (TW)
Title: Quinazoline compound and pharmaceutical composition thereof
Inventor: WU HAO
IPC: A61K31/517
Filed: 2021-10-20
Abstract: A novel compound with cancer therapeutic activity. The present invention also relates to a method for preparing these compounds and a pharmaceutical composition containing same.
Patent TW-202321611-A (TW)
Inventor: Chen chang-yuan
IPC: F16M11/38
Filed: 2021-11-29
Abstract: A display device is provided, including a main body, a first leg, and a second leg. The main body has a screen. The first and second legs are hinged on the main body. The first leg has a first rod and two support portions, wherein the first rod is connected between the two support portions. The first and second legs can be respectively unfolded toward a front side and a rear side of the main body, and an opening is formed between the first leg and the main body for receiving a laptop computer.
Patent TW-202222240-A (TW)
Inventor: SONG HYUN-SUP
IPC: A47L9/28
Filed: 2021-12-08
Abstract: 本發明提出一種清掃機系統，設置以從清掃機的塵箱清除灰塵。該清掃機系統包括：一第一停靠站，與一第一清掃機耦接；以及一第二停靠站，與一第二清掃機對接，以允許從該第一清掃機的一塵箱和該第二清掃機的一塵箱兩者收集灰塵。而且，根據門的開啟和關閉狀態，可以選擇性地在用於從該第一清掃機的該塵箱吸取灰塵的一第一吸入路徑與用於從該第二清掃機的該塵箱吸取灰塵的一第二吸入路徑之間切換一吸入路徑，而不需要增加用於切換該吸入路徑的部件。
Patent TW-202232731-A (TW)
Inventor: LEE KYUNG-HWAN
IPC: H01L21/8239
Filed: 2021-12-16
Abstract: 一種半導體記憶體元件，包含：第一字元線，在豎直方向上延伸；第二字元線，在第一水平方向上與所述第一字元線間隔開並在所述豎直方向上延伸；第一半導體圖案，具有圍繞所述第一字元線的環形水平剖面並構成第一單元電晶體的一部分；第二半導體圖案，具有圍繞所述第二字元線的環形水平剖面並構成第二單元電晶體的一部分；單元電容器，在所述第一半導體圖案與所述第二半導體圖案之間並包含第一電極、第二電極、以及電容器介電膜；第一位元線，就所述第一半導體圖案而言與所述單元電容器相對並在第二水平方向上延伸；以及第二位元線，就所述第二半導體圖案與所述單元電容器而言相對。
Patent TW-202230543-A (TW)
Title: Film and method of manufacturing semiconductor package
Inventor: TAKENAKA SATOSHI
IPC: B32B27/00
Filed: 2021-12-23
Abstract: A film includes, in this order, a substrate, a primary layer, and an adhesion layer, the primary layer including a reacted cured product of a (meth)acrylic polymer and a curing agent, and the primary layer having an elongation percentage of 90% or more, the elongation percentage being measured by a tensile test at 25 DEG C at a rate of 100 mm/min and obtained by the following formula: elongation percentage (%) = (elongated length at break (mm)) * 100/(distance between grips before pulling (mm)). A method of manufacturing a semiconductor package utilizes the film.
Patent TW-202230553-A (TW)
Title: Semiconductor device and forming method thereof
Inventor: Yang ting-li
IPC: H01L21/768
Filed: 2022-01-04
Abstract: Methods for forming under-bump metallurgy (UBM) structures having different surface profiles and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, a top surface of the first UBM structure being concave; and a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, a top surface of the second UBM structure being flat or convex.
Patent TW-202241527-A (TW)
Inventor: WESTER HANS-JURGEN
IPC: A61P35/00
Filed: 2022-01-04
Abstract: 本發明係關於式(1)化合物：
         ；
        及其醫藥學上可接受之鹽，其中M 3+ 如本文所定義；及其作為癌症診斷劑或顯像劑之用途。
Patent TW-202228429-A (TW)
Title: An indication method, a determination method and a communication device of a nominal packet filling value
Inventor: HU MENG-SHI
IPC: H04W72/04
Filed: 2022-01-10
Abstract: The present disclosure provides an indication method, a determination method and a communication device of a nominal packet filling value, for reducing the overhead of a physical layer packet extension threshold field. The indicating method includes: generating, by a first device, a PPDU, and sending, by the first device, the PPDU to a second device, a physical layer packet extension threshold information field in the PPDU including multiple packet extension threshold subfield sets corresponding to different nominal packet filling values, each packet extension threshold subfield set indicating a modulation threshold corresponding to a RU having a NSS of n and a sequence number of b. In a case that a value of a RU index mask subfield of a RU having a sequence number of y is 0, a value range of b does not include y. In packet extension threshold subfield sets corresponding to the same nominal packet filling value, the value of the RU index mask subfield of the RU having the sequence number of y being 0 indicates that the modulation threshold of a RU having the NSS of n and the sequence number of y is a modulation threshold corresponding to a RU having a NSTS of n and a sequence number of m1.
Patent TW-202331564-A (TW)
Title: 資料中毒方法及裝置
Inventor: WU SHAN-HUNG
IPC: G06F21/60
Filed: 2022-01-17
Abstract: 一種資料中毒方法及裝置。所述方法包括下列步驟：擷取一訓練資料集和一驗證資料集；隨機初始化一擾動，並將此擾動加到訓練資料集中的資料，以生成中毒訓練資料；利用高斯過程的核函數計算中毒訓練資料和驗證資料集的多個核函數值，並用以計算高斯過程在驗證資料集上的平均預測；利用高斯過程的損失函數計算平均預測與驗證資料集中的資料之間的損失，並用以生成最大化損失的目標函數；以及解析所述目標函數，以計算可最大化所述損失的所述擾動。
Patent TW-202246221-A (TW)
Inventor: UTAKA YOSHIMI
IPC: C08K5/357
Filed: 2022-01-27
Abstract: 本發明之課題為提供一種可在低溫度條件硬化之新穎的苯并噁嗪化合物、含有該化合物的樹脂原料組成物、硬化性樹脂組成物及其硬化物。本發明提供一種通式(1)所示之苯并噁嗪化合物作為解決該課題之手段。
 
     
       
         
       
     
     (式中，R 1 表示氫原子或碳原子數1至6之烷基，R 2 表示碳原子數為1至10之2價基，X表示單鍵、氧原子、硫原子、磺醯基、羰基、或者通式(1a)或通式(1b)所示之2價基)。
 
     
       
         
       
     
     (通式(1a)、(1b)中，R 3 及R 4 各自獨立表示氫、碳原子數1至10之烷基、碳原子數1至10之鹵化烷基或碳數6至12之芳基，R 3 及R 4 可分別互相鍵結而形成就整體而言為碳原子數5至20之亞環烷基，Ar 1 及Ar 2 各自獨立表示碳數6至12之芳基，*分別表示鍵結位置)。
Patent TW-202318619-A (TW)
Title: 散熱結構以及高熱傳元件
Inventor: HUANG HENG-CHI
IPC: H01L25/07
Filed: 2022-01-28
Abstract: 本發明提出一種散熱結構，包含：一導線架，包含一高溫部以及一低溫部，高溫部與低溫部為導線架中不相連的兩部分，其中高溫部上設置一高發熱元件；以及一高熱傳元件，具有兩側端，分別直接連接於高溫部與低溫部，用以將高發熱元件中的熱能分散至低溫部。
Patent TW-202312379-A (TW)
Inventor: LAI PO-CHEN
IPC: H01L23/29
Filed: 2022-02-09
Abstract: 提供一種晶片封裝體結構及其形成方法。 晶片封裝體結構包括一中介基底，其包括由一間隙區所隔開的第一及第二晶粒區。晶片封裝體結構也包括分別排置於第一及第二晶粒區上的第一及第二半導體晶粒。另外，晶片封裝體結構包括第一及第二間隙填充層形成於間隙區上並彼此分開，以及一第三間隙填充層位於間隙區上及第一與第二間隙填充層之間。第三間隙填充層的楊氏模數小於第一間隙填充層的楊氏模數及第二間隙填充層的楊氏模數。
Patent TW-202332729-A (TW)
Title: Modified polyvinyl butyral material, and preparation and applications thereof
Inventor: CHANG CHI-LO
IPC: C08L29/14
Filed: 2022-02-10
Abstract: The present invention relates to a modified polyvinyl butyral material, comprising a polyvinyl butyral composite material, a first filler, an anti-hydrolysis agent, zinc stearate, calcium stearate, a polymeric dispersant, a deodorant, tetramethylthiuram monosulfide, and trimethylolpropane tris(3-mercaptopropionate); wherein the polyvinyl butyral composite material was obtained by plasticizing a composition comprising polyvinyl butyral and a first plasticizer. The present invention also relates to a preparation method of the modified polyvinyl butyral material, a modified polyvinyl butyral product comprising a modified polyvinyl butyral layer prepared from a material comprising the modified polyvinyl butyral material.
Patent TW-202337228-A (TW)
Inventor: CAI MING-XUE
IPC: H04R1/04
Filed: 2022-03-08
Abstract: An earmuff module of a headphone includes a back cover, a sound-receiving hole, a microphone assembly and an earmuff. The back cover includes a peripheral side wall. The sound-receiving hole is formed on the peripheral side wall of the back cover and penetrates through the peripheral side wall. The microphone assembly is disposed on an inner surface of the peripheral side wall and corresponds to the sound-receiving hole, and is acoustically connected with the sound-receiving hole. The earmuff is detachably assembled on the back cover, and the earmuff includes a foam and a wrapping cover. The wrapping cover includes an extension part and a covering part. The covering part covers the foam. The extension part extends from one end of the covering part to an outer surface of the peripheral side wall and covers the sound-receiving hole, and the microphone assembly is located within a range covered by the extension part.
Patent TW-202242195-A (TW)
Title: Embedding method and processing system
Inventor: SAKAMOTO MASATO
IPC: C23C16/46
Filed: 2022-03-09
Abstract: This embedding method comprises: preparing a substrate that has an insulating film in which a depression is formed and a metal film which is provided so as to be exposed at the bottom of the depression; embedding a first ruthenium film from the bottom of the depression up to partway along the depression by CVD using a ruthenium-containing gas while heating the substrate to a first temperature; and embedding a second ruthenium film on the first ruthenium film in the depression by CVD using a ruthenium-containing gas while heating the substrate to a second temperature that is lower than the first temperature.
Patent TW-202245357-A (TW)
Inventor: SHARF ALEX MICHAEL
IPC: H01R13/6581
Filed: 2022-03-14
Abstract: 本發明揭示一種插座連接器組件（104），該組件包括一插座罩體（110），該插座罩體包括多個罩體壁（114），該罩體壁包括一頂壁（130），並形成構造成接受一可插拔模組（106）的一模組通道（118）。該頂壁包括向該可插拔模組敞開的一開口（150）。該插座連接器組件包括在該開口處耦接到該頂壁的一EMI墊片（200）。該EMI墊片在開口處提供電屏蔽。該EMI墊片具有一基座（210），該基座包括耦接到該插座罩體的頂壁之一固接表面（220）。該EMI墊片具有複數個對接介面（230）。該插座連接器組件包括一散熱器（144），該散熱器耦接到該插座罩體，該插座具有一散熱器基座，該基座具有位於該模組通道中的一熱介面（148），並且該散熱器基座構造成接合該可插拔模組，以散發來自該可插拔模組的熱量。該基座接合EMI墊片的對接介面，以將該散熱器電連接到該EMI墊片。
Patent TW-202247474-A (TW)
Title: Semiconductor device with memory elements
Inventor: HARADA NOZOMU
IPC: H01L29/78
Filed: 2022-03-14
Abstract: The semiconductor device with memory elements of the present invention comprises transistors 24a to 24e of dynamic flash memory on the substrate 20, and transistors 26a and 26b of the driver and signal processing circuits on the outside thereof. The source line wiring layer 30, the bit line wiring layer 31, the board line wiring layer 32 and the word line wiring layer 33 extend along the horizontal direction with 
respect to the substrate 20, and are connected to the extraction wiring layers 34 and 35 on the insulating layer 37 along the vertical direction from the outside of the dynamic flash memory area 21. The transistors 26a and 26b of the driver and signal processing circuit areas 23a and 23b are connected to the upper wiring layers 28a and 28b on the insulating layer 37 via the multilayer wiring layers 25a and 25b. In the entire area of the dynamic flash memory area 21, there is a high thermal conductivity layer 38 in the upper part than the bit line wiring layer 31.
Patent TW-202248242-A (TW)
Title: Conductive polymer composition, substrate, and method for producing substrate
Inventor: NAGASAWA TAKAYUKI
IPC: C08K5/205
Filed: 2022-03-24
Abstract: An object is to obtain a composition capable of: forming a uniform film even by spray coating or even when the composition is applied in the form of ink for inkjet printing; and preventing light emission from a portion other than an ITO electrode surface when the film is mounted on an organic EL device and light is emitted from the device. A conductive polymer composition contains: a composite containing a π-conjugated polymer (A) and a polymer (B) shown by a general formula (1); H2O (D) for dispersing the composite; a water-soluble organic solvent (C); and a compound (E) shown by a general formula (2). The electric conductivity of a film with a thickness of 20 to 200 nm formed from the conductive polymer composition is less than 1.00E-05 S/cm.
Patent TW-202309242-A (TW)
Title: Materials for organic electroluminescent devices
Inventor: LINGE ROUVEN
IPC: C07D333/76
Filed: 2022-04-06
Abstract: The present invention relates to a composition comprising a compound of formula (H1) and a compound of formula (H2). The present invention furthermore relates to a formulation comprising a composition comprising a compound of formula (H1) and a formula (H2) and a solvent. Finally, the present invention relates to an electronic device comprising a such a composition.
Patent TW-202302454-A (TW)
Title: Hollow particle, method of producing the hollow particle, resin composition, and resin molded product and laminate each using the resin composition
Inventor: Dao Nguyen Duy Phuong
IPC: C08K7/26
Filed: 2022-05-04
Abstract: Provided is a hollow particle, including silica, having a D
         SL of primary particles that satisfies the following expression (1), and having a breaking strength of 10 MPa or more: 1≤D
         SL ≤1.5 ··· (1) where D
         SL =D
         75L /D
         25L , and D
         25L and D
         75L represent a 25th value and a 75th value, respectively, when long diameters of 100 randomly selected primary particles are measured in observation with a scanning electron microscope and sorted in order of increasing size.
Patent TW-202310955-A (TW)
Inventor: SAFFOURI JONY
IPC: F16F7/104
Filed: 2022-05-05
Abstract: 本發明揭示一種細長刀把，其具有構成具有一圍封內腔之一質量外殼部分之一刀具抗震組件及佔據該圍封內腔之一抗震裝置。該抗震裝置包含兩個減震質量，其等安置於該刀把腔內且藉由接觸一向內腔壁面之至少三個彈性懸吊部件來彈性懸吊於該刀把腔內。該兩個減震質量由不同材料製成且具有不同長度。一切削刀具具有該刀把。
Patent TW-202243557-A (TW)
Title: Film stripping, degumming and copper melting three-in-one process capable of preventing degumming pollution
Inventor: Li qi-liang
IPC: H05K3/00
Filed: 2021-03-15
Abstract: The invention belongs to the technical field of printed circuit board manufacturing, and relates to a film stripping, degumming and copper melting three-in-one process capable of preventing degumming pollution, which comprises the following steps of: laser processing: roughening the surface of a PCB with a copper layer on the surface, and then performing laser drilling on the PCB; micro-etching: immersing the drilled PCB into a micro-etching solution added with a film stripping agent, and stripping a brownification film or a coarsening film while micro-etching; and copper plating pretreatment: continuously completing glue removal and copper melting processes on the PCB. According to the method, the film stripping agent is added into the micro-etching liquid, so that the brownification film and the coarsening film are removed at the same time in the micro-etching process so as to prevent the brownification film and the coarsening film from polluting a degumming tank agent, the step after drilling can be completed in the same assembly line, the production efficiency is improved, and the scratch risk caused by carrying between different assembly lines is also avoided.
Patent TW-202302943-A (TW)
Inventor: LAU CINDY YEE CIN
IPC: D02G3/44
Filed: 2022-05-06
Abstract: 本發明提供一種涼感紗，其包括複數個長絲。該等長絲中之至少一者包括聚乙烯。該等長絲中之每一者的尺寸小於8丹尼。該紗之尺寸小於或等於300丹尼。
Patent TW-202242575-A (TW)
Title: Systems and Methods for Monitoring Semiconductor Processing Systems
Inventor: PIZZELLA MIRANDA
IPC: H01L21/66
Filed: 2020-11-04
Abstract: A method for monitoring a semiconductor processing system including a gas delivery system, a thermal system, and a fluid flow line includes obtaining a plurality of operational data from the gas delivery system, the thermal system, or a combination thereof and determining a performance characteristic of the fluid flow line based on one or more operational data of the plurality of operational data. The method includes identifying one or more locations associated with the one or more operational data in a reference virtual model and generating a dynamic state model of the fluid flow line based on the reference virtual model, the one or more identified locations, and the determined performance characteristic, where the dynamic state model is a digital representation of the fluid flow line.
Patent TW-202233881-A (TW)
Title: Substrate processing apparatus and method of manufacturing semiconductor device
Inventor: KAMIMURA DAIGI
IPC: C23C16/46
Filed: 2021-03-22
Abstract: The invention relates to a substrate processing apparatus and a method of manufacturing a semiconductor device, and provides a structure capable of reducing occupied space and improving exhaust efficiency. The substrate processing apparatus comprises: a first processing module having a first processing container for substrate processing and a substrate carrying port provided on the front surface side; a first equipment system including a first supply system for supplying a processing gas into the first processing container, the first equipment system being disposed close to the back surface of the first processing module; and a first vacuum exhaust device that is disposed behind the first processing module and that exhausts the inside of the first processing container, the outer side surface of the first vacuum exhaust device being configured so as not to protrude further outward than the outer side surface of the first equipment system.
Patent TW-202308423-A (TW)
Inventor: LEI JING
IPC: H04W16/16
Filed: 2022-05-30
Abstract: 用於無線通訊的裝置包括發射器，該發射器被配置為基於包括第一頻率子集並且亦包括第二頻率子集的第一上行鏈路頻寬部分（BWP）與基地台進行通訊。該裝置亦包括接收器，該接收器被配置為從基地台接收包括跳頻指示符的一或多個訊息，該跳頻指示符指定是啟用還是禁用跳頻模式。發射器亦被配置為使用以下方式向基地台發送上行鏈路控制通道傳輸：基於跳頻指示符指定啟用跳頻模式，來使用第一頻率子集和第二頻率子集兩者，或者基於跳頻指示符指定禁用跳頻模式，來使用第一頻率子集或第二頻率子集中的一者。
Patent TW-202308012-A (TW)
Title: Electrostatic chuck and substrate fixing device
Inventor: SUNOHARA MASAHIRO
IPC: H02N13/00
Filed: 2022-06-29
Abstract: An electrostatic chuck includes a ceramic plate, an adsorption electrode, a ground electrode, and a wiring. The adsorption electrode is built-in near one surface of the ceramic plate. The ground electrode is arranged in the ceramic plate between the other surface of the ceramic plate and the adsorption electrode, and can be connected to a ground potential. The wiring is connected to the ground electrode in the ceramic plate and extends to the one surface of the ceramic plate.