baber/WOPTO huggingface dataset:
Patent KR-19980087063-A (KR)
Title: 레지스트의 현상방법 및 현상장치
IPC: G03F7/00
Filed: 1998-05-15
Abstract: 본 발명은 레지스트의 현상방법, 특히 레지스트의 현상에 사용되는 현상액의 농도의 제어에 관한 것으로서, 현상의 정밀도·제어성을 악화시키지 않고 현상액의 이용효율을 개선하는 것이 가능한, 레지스트의 현상방법을 제공하는 것을 목적으로 하고, 복수의 기판상에 형성되며 소정 패턴으로 노광된 레지스트막의 각각에 대해서 현상액을 순환시켜 실시시킴으로써 차례로 현상하는 방법이고, 각각의 현상시에 현상액의 도전율 및 흡광도를 측정 및 모니터하고 상기 측정값으로부터 현상액의 pH를 차례로 산출하여 상기 pH값을 소정의 범위 내로 유지하도록 제어하는 것을 특징으로 한다.
Patent KR-20000001621-A (KR)
Title: Memory logic complex semiconductor device
Inventor: CHOI YONG JIN
IPC: G11C29/00
Filed: 1998-06-12
Abstract: PURPOSE: A memory logic complex semiconductor device is provided to simplify a circuit configuration. CONSTITUTION: The memory logic complex semiconductor device having a logic circuit(111), a built-in self test circuit(121) and a memory block(141) comprises: a logic gate portion(251 to 253) for outputting an output signal from the logic circuit or an output signal from the built-in self test circuit in response to a control signal; and a storage portion(261) for storing an output signal from the logic gate portion to transfer stored signals to the memory block.
Patent KR-19990006938-A (KR)
Title: 데이타 신장 방법
IPC: H04N19/625
Filed: 1998-06-12
Abstract: CPU는 복수의 블럭을 포함하는 압축 화상 데이타에 수평 방향으로 1 블럭 씩 엔트로피 복호화를 실시하고, 각 행의 최후의 블럭에서는 복호 데이타에 역양자화를 실시한다.  이와 같이 하여, 각 행의 선두 블럭의 선두 데이타가 기록된 플래시 메모리의 어드레스와 각행의 선두 블럭의 역양자화에 필요한 DC치가 검출된다.  CPU는 그 후, 검출된 어드레스 및 DC치를 이용하여 좌단의 수직 블럭 열에서 신장 처리를 실시한다.  또, 신장 처리시 인접하는 블럭의 어드레스 및 현 블럭의 DC치를 검출한다.  수직 방향에서의 신장 처리시 인접하는 수직 블럭 열의 처리에 필요한 파라미터를 검출하기 때문에 적은 메모리 용량으로 수직 방향에 대한 신장 처리가 가능하게 된다.
Patent KR-20000002432-A (KR)
Title: Trunk line occupying method for hard hand-off between exchange stations
Inventor: KIM DONG HYUN
IPC: H04B7/26
Filed: 1998-06-19
Abstract: PURPOSE: A trunk line occupying method for a hand-off between exchange stations is provided to unite the condition of a trunk line and the information on whether it occupies. CONSTITUTION: The trunk line occupying method for executing a hard hand-off between telephone exchanges comprises the steps of: deciding ASP for starting searching a junction line at NTP; demanding for starting occupying the junction line onto the next ASP of the ASP memorized at the NTP; distributing the junction line capable of occupying by the ASP demanded for starting occupying the junction line.
Patent KR-20000002845-A (KR)
Title: Method for rate adaption and routing for asynchronous data call treatment
Inventor: AHN SANG GEE
IPC: H04L12/58
Filed: 1998-06-24
Abstract: PURPOSE: A method for a rate adoption and a routing is provided to enable a data service of a large capacity without additional cost. CONSTITUTION: A method for a rate adoption and a routing is obtained by; matching a trunk(E1) line between a base station and an Inter Working Function(IWF) by a base station controller connecting module(11) and performing an LAPD protocol function for transmitting-receiving data; and a Time switching over module(12) switching over every calls inputted to the IWF to wanted connecting modules according to the control of a controller for performing a complete path providing function.
Patent KR-19990007266-A (KR)
Title: 실릴 말단 차단된 유기 중합체의 제조 방법
IPC: C08F4/642
Filed: 1998-06-24
Abstract: 본 발명은,  무수 조건하에서 단량체 M' 및/또는 M'의 올리고 중합체를 어떠한 실록산 결합도 존재하지 않는 화학식 2의 실릴 양이온과 접촉시킴을 포함하는, 화학식 1의 실릴 말단 차단된 유기 중합체의 제조 방법에 관한 것이다. 바람직한 M' 단량체는 올레핀이다. 
     화학식 1 
     R 1   3 SiM 
     화학식 2 
     R 1   3 Si +   
     상기식에서, 
     R 1 은 각각 독립적으로 임의로 치환된 탄화수소 또는 하이드로카본옥시 그룹, 수소, 할로겐 또는 1가 실록산-유리 규소-함유 그룹을 나타내고, 
     M은 화학식 3의 에틸렌계 불포화된 단량체 M'의 부가 중합화에 의해 제조되는 유기 중합체이다. 
     화학식 3 
     H(R 3 )-C=C-(R 2 ) 2   
     여기서, 
     R 2 는 각각 독립적으로 임의로 치환된 탄화수소, 수소 또는 할로겐을 나타내고, 
     R 3 은 수소 또는 메틸 그룹을 나타낸다.
Patent KR-20000003377-A (KR)
Title: Transconductance amplifier
Inventor: LEE HEUNG BAE
IPC: H03F3/45
Filed: 1998-06-27
Abstract: PURPOSE: A transconductance amplifier is provided to increase safety of a circuit. CONSTITUTION: The transconductance amplifier comprises: a differential input unit inputting a differential input voltage; a differential amplifier(26) connected to an electric current source and outputting the voltage that is input through the differential input unit to be amplified; and a first common mode amplifier(28) connected to the input terminal of the differential amplifier and feeding a common DC voltage to an input current source unit by comparing with a comparison standard voltage.
Patent KR-19990029236-A (KR)
Title: 가변용량 압축기
IPC: F04B27/10
Filed: 1998-06-29
Abstract: 운전 상태에서의 캠 플레이트의 비틀림의 발생을 억제하여 진동이나 소음의 발생을 저감 가능한 가변용량 압축기를 제공한다. 
     구동 샤프트와 일체 회전 가능한 러그 플레이트(31)의 후방측면(3lb)에 한 쌍의 지지 암(34)을 돌출 설치하여, 그 지지 암(34)의 선단에 가이드 구멍(35a, 35b)을 형성한다.  그 가이드 구멍(35a, 35b)에 사판(32)의 전방측면에 정지된 한 쌍의 가이드 핀(33a, 33b)을 슬라이드 가능하게 끼워 넣는다.  구동 샤프트의 회전 방향 전방측의 제 1 가이드 구멍(35a)은, 러그 플레이트(31)측의 내주면에 평면부(89)를 갖는 단면이 타원형상으로 형성하여, 회전 방향 후방측의 제 2 가이드 구멍(35b)에서 소정의 오프셋(d)량만 사판(32)측으로 비켜 배치한다.
Patent KR-20000003561-A (KR)
Title: Semiconductor anti-static circuit
Inventor: JUNG JAE KWAN
IPC: H01L27/06
Filed: 1998-06-29
Abstract: PURPOSE: A semiconductor anti-static circuit is provided to reinforce an electrostatic discharge(ESD) characteristic by making much electric current route. CONSTITUTION: The semiconductor anti-static circuit comprises: a first PNP bipolar transistor(T1) connected between a pad(10) and an electric power voltage wire; a second NPN bipolar transistor(T2) in which one part is connected with the first PNP bipolar transistor; an active diode type transistor(T3); a third PNP bipolar transistor(T4); and a forth NPN bipolar transistor(T5) wiring the base of the second NPN bipolar transistor and one part of the third PNP bipolar transistor.
Patent KR-20000004026-A (KR)
Title: Method of simultaneously recording a main and a subsidiary screens of a tvcr having a pip function
Inventor: LEE HYUN CHEOL
IPC: H04N5/76
Filed: 1998-06-30
Abstract: PURPOSE: A method of simultaneously recording a main and a subsidiary screens of a TVCR having a PIP function is provided to enhance a user's convenience. CONSTITUTION: The method comprises steps of: providing a power to the TVCR with a remote controller(S100); determining whether the main picture is recorded or the main and the subsidiary pictures are recorded(S200); controlling, in case that the main and the subsidiary pictures are recorded, a mixing switching unit to provide the mixed signal to the VCR(S400); recording the mixed signal(S500). Thereby, it is possible to record the both pictures in PIP function.
Patent KR-19990007479-A (KR)
Title: 분기 해저드의 저감을 적을 회로로 실현한 파이프라인 프로세서
IPC: G06F9/32
Filed: 1998-06-30
Abstract: 본 발명의 프로세서는 프로그램 루프 바로 앞에 설정된 레지스터 명령과 프로그램 루프의 끝에 설정된 루프명령을 사용하여 고속으로 프로그램 루프를 실행한다.  분기 타깃 정보 레지스터 명령이 명령 디코더에 의해 해독되는 경우 페치 명령 버퍼내의 코드는 분기 타깃 명령 레지스터에 전송되고, 해독 명령 카운터내의 시프트된 포인터는 분기 타깃 페치 어드레스 레지스터로 전송된다.  고속 루프 명령이 명령 디코더에 의해 해독되고 분기 조건이 만족된 후 분기 타깃 페치 어드레스내의 포인터는 페치 명령 카운터와 해독 명령부에 전송되고 분기 타깃 명령 레지스터내의 코드는 해독 명령 버퍼로 전송된다.  해독 명령 카운터내의 시프트된 포인터를 사용함으로써 고속 루프명령은 소규모 하드웨어로 효과적으로 실행될 수 있다.
Patent KR-20000004263-A (KR)
Title: Apparatus for combining a power button of a television
Inventor: KIM YONG JAE
IPC: H04N5/63
Filed: 1998-06-30
Abstract: PURPOSE: An apparatus for combining a power button of a television is provided to easily operate the power on/off operation. CONSTITUTION: A power button(110) is established at one lower side of a front mask(100) of the television. In a button(120) of the power button(110), a projection(210) is connected. In both sides of the projection(210), slide guide grooves(220)(220') is formed. And in one side of the projection(210), a fixing groove(230) is established. In both sides of the button connection unit(130), elastic members(250)(250') is projected. Thereby, it is possible to easily operate the power of/off operation.
Patent KR-19990013553-A (KR)
Title: 반도체 디바이스 및 반도체 디바이스 제조 공정
IPC: H01L21/768
Filed: 1998-07-03
Abstract: 반도체 디바이스는 장벽막과 같은 제 1 막(44,1032)의 연속적으로 계층화된 부분을 가지며, 상호접속층과 도전 플러그와 같은 도전 구조에 이용된다.  연속적으로 계층화된 부분(44,1032)은 난용성 금속과 질소와 같은 제 1 요소와 제 2 요소를 포함한다.  연속적 계층화는 도전성이 강한 제 2 도전막(46, 1054, 및 1064)에 가장 가까운 제 1 요소의 농도를 변경한다.  다른 반도체 디바이스는 대부분이 구리로 이루어진 제 1 도전막과 제 2 도전막(1054, 1065)을 포함한다.  제 1 도전막은 제 1 부분, 제 2 부분, 및 제 3 부분을 갖는다.  제 2 부분은 제 1 부분과 제 3 부분의 사이에 위치하고 제 3 부분은 제 2 도전막(1054 와 1064)에 가깝게 위치한다.  제 2 부분의 질소 농도는 제 1 부분과 제 3 부분의 각각의 질소 농도보다 높다.  반도체 디바이스를 제조하기 위한 공정이 또한 설명되어 있다.
Patent KR-20000007691-A (KR)
Title: Fireproof brick for torpedo ladle car and ladle, and method for preventing oxidation of carbon
Inventor: BEOM JIN HYUNG
IPC: C04B35/14
Filed: 1998-07-06
Abstract: PURPOSE: A fireproof brick for torpedo ladle car and ladle and a preparation method thereof are provided, for increasing the life of the brick by preventing the oxidation of carbon in the brick. CONSTITUTION: The surface of the fireproof brick is coated with an antioxidant layer with the thickness of 0.2-1.0 mm for preventing of the oxidation of carbon. The antioxidant preferably comprises SiO2 of 30-75 weight part, Na2O and K2O of 6-20 weight part, B2O3 of 10 weight part or ZrO2 of 60 weight part, Al2O3 of 1-10 weight part, and the balance of inevitable impurities. The fireproof brick is prepared by coating the surface with the antioxidant; and preheating the brick at a temperature between 700 and 1500°C to form a glass-phase coating film by glazing.
Patent KR-20000010091-A (KR)
Title: Method of tarring a battery
Inventor: KANG SOON SUN
IPC: H01M2/02
Filed: 1998-07-30
Abstract: PURPOSE: When tar is applied to a cell, a nozzle is used. During the tar application, a can turns round. Then, a tar is not applied evenly, though the can keeps constant distance to it's axis. Also, the time of the application is getting longer, because one rotation is needed for the tar application. CONSTITUTION: More than 4 tar-exhaust nozzles are to be arranged at the equal angles of a can. Also, the can is to turns round for a tar application when tar being spouted. Consequentially, a tar for the insulation of the cap assembly in the can of the nickel-hydrogen cell is applied evenly, and the time of the application is reduced.
Patent KR-20000013448-A (KR)
Title: Apparatus and method for generating game sound in television receiver
Inventor: LEE JAE KYUNG
IPC: H04N5/60
Filed: 1998-08-08
Abstract: PURPOSE: An apparatus for generating a game sound which produces a sound by itself without an additional sound source integrated circuit when a game function is necessary in a television and a method thereof are provided. CONSTITUTION: An apparatus for generating a game sound in a television, the apparatus comprising: a key signal input section for inputting a plurality of key signals for a game; a game status storage section(2C) for checking a game status and storing a result thereof; a game sound data storage means(2F) for storing a sound generating data for producing a sound; a controller(2B) for determining a sound generating time based on the data stored in the game status storage section(2C), setting a sound generating condition to data stored in the game status storage section(2C), and producing a sound pulse of a corresponding frequency; and a wave shaping means(3) for shaping the sound pulse from the controller(2B).
Patent KR-20000014278-A (KR)
Title: High power metal oxidation layer semiconductor field effect transistor
Inventor: CHANG HO-CHUL
IPC: H01L29/78
Filed: 1998-08-19
Abstract: PURPOSE: The ruggedness is to be improved by dealing with the shortcomings that the pressure-resistant efficiency of a high power MOSFET (metal-oxidation layer-semiconductor field effect transistor) reduces, and the elements of the MOSFET break down. CONSTITUTION: The pressure-resistant efficiency improves through intensely doping the downside of the source area(44) in a body area(42) that is placed horizontally in the shape of stripes in MOSFET. Counter excess power bypass area is made by placing a body area(52) of the second Electro-conductor that has no source area(44) in the epitaxial layer(41), which is weak in a chip. Thus the elements are prevented from being broken down by counter excess power, and the ruggedness improves.
Patent KR-20000014406-A (KR)
Title: Method for manufacturing semiconductor devices
Inventor: SEOL YEO-SONG
IPC: H01L21/306
Filed: 1998-08-20
Abstract: PURPOSE: A fabrication method of semiconductor devices having RuO2 used as a storage electrode is provided to simplify manufacturing process and prevent an environment pollution by using mixed gas of O2 + N2 as a plasma gas. CONSTITUTION: The RuO2 etching method used as a storage electrode of semiconductor device comprises the steps of loading the semiconductor wafer into an etching chamber; and etching the RuO2 thin film formed on the semiconductor wafer by ECR(electro cyclotron resonance) or HDP(high density plasma) etching apparatus using mixed gases of O2 + N2 formed by adding N2 gas to the conventional O2 gas. Since the O2 + N2 gas has a high etching speed, a high etching selectivity and a good directionality without poisons, it is possible to prevent the environment pollution and simplify the manufacturing process.
Patent KR-20000015029-A (KR)
Title: Contact formation method of semiconductor memory devices
Inventor: KIM YUN-GI
IPC: H01L21/60
Filed: 1998-08-26
Abstract: PURPOSE: A method for forming a contact of semiconductor memory is provided to simplify manufacturing process and reduce manufacturing cost by skipping a DC(direct contact) process of cell region or a DC process of core region. CONSTITUTION: The method comprises the steps of forming a transistor having a gate (104), a source and drain regions on a substrate (100) divided by cell and core regions; forming an interlayer insulator (106) on the resultant structure; forming a DC pad (110a) and a BC(buried contact) pad (110b) having a step compared to the interlayer insulator (106) and formed between the gates (104); forming an insulating substance (112) having bad step coverage such as PE-TEOS(plasma enhanced tetraethylorthosilicate); etching the insulating substance (112) to expose the DC and BC pads (110a, 110b); forming a first conductive layer (114) on the resultant structure; forming a second conductive layer (116) on the first conductive layer (114); and forming a bit line by etching the second and first conductive layer (116, 114) and simultaneously isolating between the bit line and the first conductive layer by over-etching the first conductive layer formed on the DC pad (110a).
Patent KR-19990023998-A (KR)
Title: 시그널링 채널을 공유하기 위한 장치 및 방법
IPC: H04W92/12
Filed: 1998-08-28
Abstract: 본 발명은, 채널화된 형식으로 공통 전송 선로를 통해 기지국 제어기에 접속된 둘 이상의 기지국들 간에 통신 채널을 공유하기 위한 장치 및 방법에 관한 것이다.   본 발명은, 각 기지국이 기지국 제어기로부터 공유 통신 채널을 통해 전송된 데이터를 수신하고, 기지국 제어기로부터 전송된 데이터가 그 기지국에 대한 것인지를 판단하여, 통신 채널을 통해 다른 기지국에 의해 전송되는 데이터를 방해하지 않고 그 데이터를 통신 채널내에 삽입할 수 있게 한다.   일실시예에서, 각 기지국은, 시그널링 채널을 통해 전송되는 시그널링 메시지가 모든 기지국에 의해 수신될 수 있도록, 전송 설비상에 브리지되도록 구성된다.   시그널링 메시지는 시그널링 메시지가 전송될 특정 기지국을 지정하는 연관 식별자를 갖는다.   다른 실시예에서, 각 기지국은, 데이터 스트림내에 이미 존재하는 시그널링 메시지를 방해하지 않고, 자신의 시그널링 메시지를 시그널링 채널을 통해 데이터 스트림내로 삽입할 수 있다.
Patent KR-20000018340-A (KR)
Title: Method for forming tungsten-silicide of semiconductor devices
Inventor: JEON DONG WOOK
IPC: H01L21/28
Filed: 1998-09-01
Abstract: PURPOSE: A W-silicide formation method is provided to decrease a resistance of the W-silicide by using improved sintering process. CONSTITUTION: In a sintering process of W-polycide structure laminated of W-silicide layer and polysilicon layer, the sintering process is performed at atmosphere of N2(15 liters per minute)/O2(15cc/minute), in the temperature of 900 deg.C, and for 20 minutes, thereby forming W-silicide layer having a low resistance. The thickness of the polysilicon layer has a range of 2000 to 3000 angstrom and the thickness of the W-silicide layer has a range of 1500 to 2500 angstrom.
Patent KR-20000024859-A (KR)
Title: Air knife of chemical vapor deposition device
Inventor: LEE RAK GI
IPC: H01L21/205
Filed: 1998-10-02
Abstract: PURPOSE: An air knife of a chemical vapor deposition device prevents that the wafer from polluting in a wafer deposition process because of a wafer conveyance belt. CONSTITUTION: Air knife(100) of a chemical vapor deposition device is used to remove a moisture on a belt while removing a foreign material on a wafer conveyance belt. The air knife includes two manifolds, and a tube positioned between the two manifolds(120a,120b). The tube has many nozzles(142) for dispersing air to the belt. The tube is in association with each manifold, so that two tubes(140a,140b) are needed. A pitch between nozzles(142) is gradually reduced from a front part to an end part. Thereby, the air knife of a chemical vapor deposition device prevents the wafer from polluting in a wafer deposition process, and prevents a tube from deteriorating.
Patent KR-19990044899-A (KR)
Title: 경화성 수지 및 수지 조성물
IPC: G03F7/038
Filed: 1998-10-23
Abstract: 열과 빛으로 중합경화시켜, 내열성, 내습성, 피도물에의 밀착성 등의 특성이 우수한 경화물을 형성시킬 수 있는 경화성 수지 및 그의 조성물을 제공하는 것을 과제로 한다.  또한 동시에, 비점착성, 신속한 현상성 및 양호한 경화 도막 물성을 나타내는 알칼리 현상성이 있는 수지 및 그의 조성물을 제공하는 것도 과제로 하고 있다. 
     에폭시 수지를 변성시켜 얻어지는 라디칼 중합성의 경화성 수지로서, 1 분자 중에 2 개 이상의 에폭시기를 가지는 에폭시 수지에, 알코올성 히드록실기를 가지는 페놀 화합물 및 불포화 일염기산을 반응시킴으로써 얻어지는 것을 특징으로 하는 경화성 수지이다.
Patent KR-19990037428-A (KR)
Title: 비례축소가능한 와이드-어레이 잉크젯 프린트헤드 및 그 제조방법
IPC: B41J2/155
Filed: 1998-10-27
Abstract: 비례축소가능한 와이드-어레이 프린트헤드(12)는 다수의 열 잉크젯 프린트헤드(18)를 캐리어 기판(20)에 장착함으로써 형성된다.  프린트헤드는 일면(28)에 장착되어 있으며 논리 IC(29)와 구동 IC(30)는 반대쪽 면(72)에 장착되어 있다.  상호접속부(90)는 캐리어 기판을 통해서 형성되어 프린트헤드를 논리 IC와 구동 IC에 전기적으로 결합한다.  캐리어 기판은 실리콘으로 형성되며 잉크 재충전 슬롯(32)을 형성하도록 에칭된다.  땜납 범프(78) 장착 공정은 캐리어 기판에 프린트헤드를 장착하는데 사용된다.  이러한 공정은 각각의 프린트헤드를 정렬하는 역할을 한다.  땜납은 프린트헤드 잉크 슬롯(42) 주위에 유체 경계를 형성한다.
Patent KR-20000027686-A (KR)
Title: Method for forming spin-on-glass layer
Inventor: LEE SEUNG JIN
IPC: B05D1/40
Filed: 1998-10-29
Abstract: PURPOSE: A method for improving smoothness and increasing thickness of an SOG(Spin On Glass) layer, by spraying an SOG solvent on the SOG layer, is provided to obtain the SOG layer with thicker thickness, to improve a filling characteristic in a semiconductor element manufacturing process having a fine feature size, to reduce thickness of an edge bead generated by spin coating, and to prevent a via bowing situation caused by remaining carbon groups when etching the SOG layer, by preventing breaks of the edge bead in a successive process and by preventing the SOG layer being formed thicker than other parts. CONSTITUTION: A method for forming an SOG(Spin On Glass) layer for smoothness of a semiconductor element comprises the steps of: coating the SOG layer on a wafer; spraying an SOG solvent on the SOG layer, and smoothing the surface of the SOG layer by redissolving the SOG layer, through rotating the wafer. The SOG solvent is an ether field or alcohol.
Patent KR-20000028298-A (KR)
Title: Filter press and hydrating method thereof
Inventor: KIM MAN JONG
IPC: B01D25/12
Filed: 1998-10-30
Abstract: PURPOSE: A filter press and its dehydrating method are provided to reduce the rate of contained water of a cake by secondarily compressing and filtering the cake inside a filtering fabric through a compressed fluid, and by evaporating moisture inside the cake with a heat transmission at the same time. CONSTITUTION: A crude slurry supplied inside a filtering fabric(21) according to the pressed supply into a filtering unit(3) is compressively filtered between the filtering fabric(21) by a pumping pressure. When the first press filtering is finished, moisture around a cake(23) press filtered accepted inside the filtering fabric(21) supplied in the filtering unit(3) is forcibly ventilated by compressed air accepted in a storing unit of compressed air(37). A pressed fluid is supplied into a press filtering plate(19) by closing a supplying valve of compressed air(41) and opening a supplying valve of pressed fluid(49). The cake(23) accepted inside the filtering fabric(21) is secondarily press filtered by expanding the press filtering plate(19) with the supplied pressed fluid. When the secondary compression is finished, moisture of the cake(23) evaporated with the compressed fluid is forcibly ventilated with passing the compressed air of the supplying unit of compressed air(7) between the filtering fabric(21) by closing a flowing valve of filtering liquid(33) and opening the supplying valve of compressed air(41). Thereby the contained rate of moisture of the cake(23) accepted inside the filtering fabric(21) is reduced.
Patent KR-20000032345-A (KR)
Title: Module connector
Inventor: CHOE SEONG WON
IPC: G06F1/00
Filed: 1998-11-13
Abstract: PURPOSE: A module connector is provided to combine a board to modules with various sizes, wherein the board is movable. CONSTITUTION: A module connector comprises a board transferring apparatus which moves a board(50) back and forth in accordance with the module size. The board transferring apparatus comprises a fixed axis(100a) which is formed on a case(100), a rotation ring(53) which turns on the fixed axis(100a) by a board transferring extrusion(60a), a groove guide(51) which moves along a groove(50a) formed on the board(50), wherein the rotation of the rotation ring(53) makes the board(50) move, and a torsion spring(52). One end of the torsion spring(52) is fixed on the groove guide(51) and the other end of the torsion spring(52) is fixed on the case(100) via rotation ring(53).
Patent KR-20000034400-A (KR)
Title: Fluoride ion remover, preparation method thereof and removing method of fluoride ion in waste water using the same
Inventor: KIM DONG HO
IPC: B01J20/06
Filed: 1998-11-30
Abstract: PURPOSE: A fluoride ions remover, its preparation method and a removing method of fluoride ions from waste water using the same are provided. The fluoride ion remover is easily produced at low cost by using tysonite and consequently, fluoride ion in waste water is precipitated and removed effectively. CONSTITUTION: A fluoride ions remover is prepared by the following steps of: pulverizing tysonite which comprises 60 or more % of La and Ce; adding the pulverized one to 30-50% of sulfuric acid or 40 or more % of per chloride acid to make the ratio of tysonite to acid solution be 1: 15 (g/ml); heating the solution at over 150°C for 2 or more hours to dissolve it. Preferably the pH of fluoride ions remover is below 2, and the tysonite such as monazite and/or bastnasite is used for producing it. The fluoride ions in waste water is removed by controlling the pH of waste water to be 3-7; adding fluoride ions remover to the waste water in the equivalent ratio of 1: 1.1 to 1: 1.3 to precipitate fluoride ions; and separating the precipitated fluoride ions.
Patent KR-20000004874-A (KR)
Title: Call registerring device for elevator
Inventor: OOYA KYOJO
IPC: B66B3/00
Filed: 1998-12-09
Abstract: PURPOSE: A call registering device for an elevator is provided to automatically register a destination, and to correct to the automatic registration. CONSTITUTION: The call registering device for an elevator has: an individual distinguishing device to distinguish a user, installed in a platform; a memory device of an expectant destined layer to remember the previously remembered destined layer as the expectant destined layer of the user; a reading device of the expectant destined layer; an answer light to display the read expectant destined layer to a car; a time limit device to register the control department of the elevator; a car destined button installed in the car, and to register the new layer appointed by an operation in a certain time before the expectant destined layer.