baber/WOPTO huggingface dataset:
Patent JP-H02239696-A (JP)
Title: Manufacture of multilayer substrate
Inventor: YAMADA YUJI
IPC: H05K3/46
Filed: 1989-03-14
Abstract: PURPOSE:To improve the quality by making a through hole by laser beam machining in a multilayer substrate formed by lamination and firing of green sheets, forming a metal layer on the inner wall of said through hole, and pouring molten metal into the through hole to form a through pier which connects ceramic substrates. CONSTITUTION:A multilayer substrate 1 comprising a plurality of ceramic substrates 2 laminated is formed by lamination and of green sheets. A through hole 3 is made in the specific part of the multilayer substrate 1 by laser beam machining and a metal layer 4 is formed on the inner wall 3A of the through hole 3 and surface layers 1A. A through pier 6 to connect for electric conduction the laminated layers of the ceramic substrates 2 is formed by pouring molten metal 14 into the through hole 3 having the metal layer 4 on the inner wall thereof. Therefore, the molten metal 14 is easily poured and securely fused together with the metal layer 4. Thereby the quality improves.
Patent JP-H09249558-A (JP)
Title: Dopamine derivative-containing suppository
Inventor: YOSHIDA MASANORI
IPC: A61K31/222
Filed: 1996-03-19
Abstract: PROBLEM TO BE SOLVED: To obtain a dopamine derivative-containing suppository, good in elution property and absorption in the body and having excellent bioavailability. SOLUTION: This suppository contains a dopamine derivative of the formula (R is methyl or 2-methylthioethyl) and a water-swelling polymeric substance in a water-soluble base material (e.g. polyethylene glycol). The content of the dopamine derivative is 1-60wt.%, the content of the water-soluble base material is 35-90wt.% and the content of the water-swelling polymeric substance is 1-30wt.%, each based on the total of the preparation. As an example of the dopamine derivative, (-)-(S)-2-acetamido-N-[3,4-bis(ethoxycarbonyloxy) phenethyl]-4-(methylthio)butylamide is cited, and as an example of the water- swelling polymeric substance, an internally crosslinked polyvinylpyrrolidone, chitosan, etc., is cited. Preferably, other various additives are adequately compounded and the mixture is formulated by a heat fusing method, and the weight of each preparation is 1-2g.
Patent JP-S61220512-A (JP)
Title: Surface acoustic wave resonator
Inventor: YAMANOUCHI KAZUHIKO
IPC: H03H9/25
Filed: 1985-03-26
Abstract: PURPOSE:To realize a high reflection efficiency by arranging alternately a reflection strip using gold having a negative reflection factor as the major component and a reflecting strip using Al having a positive reflecting factor as the major component in a pitch of lambda/4. CONSTITUTION:The surface acoustic wave reflection strip 2 made of a gold thin film having a film thickness of lambda/200 with lambda/8 of wire width and the surface acoustic wave reflecting strip 2 made of an aluminum thin film having a film thickness of lambda/50 similarly are arranged alternately in a pitch of lambda/4 on a crystal substrate 1, where lambda is a wavelength of a surface acoustic wave. Thus, the reflecting wave at both the strips is added and a high reflection efficiency is realized.
Patent JP-H06274607-A (JP)
Title: Parallel signal processor
Inventor: HOSHINO KIYOSHI
IPC: H04N19/60
Filed: 1993-03-22
Abstract: PURPOSE:To facilitate program preparation in the case of performing image compression processing while using plural processors, to use an effective parallel processing system for video signal processing and to reduce overhead caused by inter-processor communication as well. CONSTITUTION:This device is provided with a preprocessing part 1A for performing scan conversion to video signals and applying them to a parallel processing part 1B equipped with arithmetic parts respectively between the respective steps of input shift registers and output shift registers, and this preprocessing part 1A converts one line while skipping eight picture elements in the direction of the input video signal so that 64 picture elements (one block) can be vertically arranged as a result, namely, so that 64 picture elements can be vertically arranged and 94 picture elements can be laterally arranged, and scans/moves the lateral picture elements to the 94 steps of shift registers at the parallel processing part 1B. Thus, the respective picture elements can be calculated by simultaneously longitudinally shifting data in the respective steps, and computing elements corresponding to the respective steps can calculate picture elements in the same block.
Patent JP-H04296120-A (JP)
Title: Automatic level control circuit
Inventor: MARU TSUGIO
IPC: H04B1/04
Filed: 1991-03-26
Abstract: PURPOSE:To stably realize the starting characteristic of an ALC circiut used for a porable telephone set without being affected by dispersion in the product and to attain the circuit suitable for circuit integration. CONSTITUTION:The control circuit is provided with a 1st operational amplifier 3 receiving the output of a directional couplere 2 connected to the output of a transmissiton power amplifier 1 and a transmission level control signal, a 2nd operational amplifier 4 receiving the output of the 1st operational amplifier 3 and a 3rd operational amplifier 5 receiving the output of the 2nd operational amplifier 4, a 1st transistor(TR) 6 connected between the input and output of the 3rd operational amplifier 5, a 2nd TR 7 connected between the input of the 3rd operational amplifier 5 and the 3rd TR 8, a 4th TR 9 connected to the 3rd TR 8 with current mirror, a 5th TR10 controlling a transmission power level with a current flowing to the 4th TR 9 and the addition of the voltage generated from the 5th TR 10 to the input of the 2nd operational amplifier 4.
Patent JP-2000255281-A (JP)
Title: Sound insulating structure of transmission tunnel part
Inventor: SEKINO TOMOHIRO
IPC: F16H59/02
Filed: 1999-03-09
Abstract: PROBLEM TO BE SOLVED: To enhance the sound insulating property of a transmission tunnel part without impairing the operability of a shift lever. SOLUTION: A sound insulating box 30 is mounted on the lower surface of the floor panel 20 of an automatic transmission operating part 10 and a good sound insulating effect is achieved by the three-wall structure of the sound insulating box 30 comprising a box wall, a panel sealant 15 and a cover plate 14. Also, the sound insulating box 30 is provided with an opening 33 through which a connecting lever 17 is passed, and the length of a cylinder 40 having a sealing function and provided at the connecting lever 17 is set to be longer than the sliding stroke of the connecting stroke 17 so as to assure good sealability.  The sound insulating box provided with an opening permitting the movement of a shift lever 13 is mounted on the lower surface of the floor panel 20 of the transmission operating part 10 and a sound-absorbing material 63 is affixed to the interior wall of the floor panel to enhance the sound insulating property of a floor transmission part.
Patent JP-S53146389-A (JP)
Title: Method for cutting birttle metal
Inventor: IGUCHI NOBUHIRO
IPC: B23P17/00
Filed: 1977-05-27
Abstract: PURPOSE: To apply shearing stress which is 20-30% of tensile strength to a brittle metal material, heat it to temperatures above the transformation point and then cool it so that highly accurate cut surfaces with increased ductility can be obtained. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H03264639-A (JP)
Title: Al alloy product having high strength at high temperature
Inventor: OGINO YOSHIMICHI
IPC: B22F1/00
Filed: 1990-03-12
Abstract: PURPOSE:To obtain a lightweight Al alloy product having high strength at high temp. and excellent in tensile strength and fatigue strength at room and high temps. by subjecting a rapidly splidified powder of an Al alloy having a specific composition containing Zr, Ni, Cr, Mo, Ti, etc., to extrusion or forging. CONSTITUTION:An Al alloy having a composition consisting of, by weight, 0.3-1.5% Si, 4-6% Cu, 0.5-1.2% Fe, 1.5-2.5% Mg, 0.3-1.0% Mn, 0.2-1.0% Zr, 0.3-1.6%, in total, of one or more elements among Ni, Cr, Mo, and Ti, and the balance essentially Al is rapidly cooled by means of water atomization, etc., at >= about 10<4> deg.C/sec cooling rate. The resulting rapidly solidified Al alloy powder is extruded or forged. It is suitable to exert extrusion at about 5-20 extrusion ratio at about 400-480 deg.C extrusion temp. Further, it is preferable to carry out forging at about 300-550 deg.C. By this method, the Al alloy product having excellent tensile strength and fatigue strength at a temp. as high as about 180 deg.C as well as at room temp. can be obtained.
Patent JP-S56159952-A (JP)
Title: Winding machine for flat motor
Inventor: MIYAKE SHIYUUICHI
IPC: H02K15/04
Filed: 1980-05-13
Abstract: PURPOSE:To produce coils in succession with one continuous coil wire by a method wherein mold pieces of the same number with coil elements are accumulated around a shaft being provided with an outline the same with the inside diameter of the coil element interposing spacers, and the coil wire is wound in succession between respective mold pieces. CONSTITUTION:The device is to form successively the nearly pedestal shaped flat coil elements 11 for the number necessary for an armature coil with one coil wire (e), and the shaft 29 being provided with the outline nearly the same with the inside diameter of the coil element 11 is prepared at first. The flat mold pieces 28 consisting of disk 31 are also prepared for the number the same with the number of the coil elements, a penetrating hole 32 to insert the shaft 29 therein and projetions 33 are formed inside of respective mold pieces, and the spacers 35 corresponding to the thickness of the coil element 11 are fixed to the end faces of respective projections 33. This mold pieces 28 are accumulated on the shaft 29 to form an assembled body 26, and the coil wire (e) is wound in succession between respective mold pieces 28 while rotating the shaft 29.
Patent JP-S57177164-A (JP)
Title: Copying machine
Inventor: TAKEMOTO YASUMASA
IPC: G03B27/34
Filed: 1981-04-24
Abstract: PURPOSE:To eliminate the inconvenience of increasing distortion of a copied image and to improve the reliability of copying operation by providing a means of disabling copying size conversion during copying operation. CONSTITUTION:Reduction mode and unmagnification mode setting circuits 17, 20 have reduction and unmagnification switches 18, 21 provided in an operating part, and are applied with a DV voltage Vd via respective resistors 19, 22. On the other hand, an arithmetic processing part 23 that performs various controllings emits a copying operation signal D indicating the copying operation under working and under standby together with an optical movement command signal C according to reduction and unmagnification copying mode setting signals A, B. The signals A, B are supplied to one input end of AND circuits 24, 26, and the signal D is supplied via an inverter circuit 25 to the other input end. The inconvenience of increasing distortion of copied images is eliminated by this and the normal copying operation is accomplished.
Patent JP-H07267970-A (JP)
Title: Method for producing phosphonium salt
Inventor: FUKUMOTO TAKEHIKO
IPC: C07F9/655
Filed: 1994-03-31
Abstract: PURPOSE:To efficiently obtain the subject compound capable of being fed to Wittig reactions without being purified because the residue of a non-reacted chloride compound can be reduced extremely low, by reacting a phosphine compound with the chloride compound by a specific method. CONSTITUTION:The objective compound is obtained by reacting a phosphine compound of formula, R<1>3P (R<1> is phenyl, 2-8C linear alkyl) (e.g. triethylphosphine) with the primary or secondary chloride of formula [R<2> is H, alkyl, etc.; R<3> is H, (un)saturated hydrocarbon] [e.g. 8-tetrahydro-2- pyranyloxy)octyl chloride, 2-chlorohexane] in the presence of an alkali metal salt of formula: MBr or MI (M is Li, Na, K) in a solvent selected from DMF, N,N-dimethylacetoamide and N,N-1,3-dimethylimidazolidinon. 200g of the solvent and 0.9-3 moles of the alkali metal compound are preferably used per mole of the chloride of the formula.
Patent JP-S54154280-A (JP)
Title: Semiconductor device
Inventor: OGIWARA SEIICHIROU
IPC: H01L29/73
Filed: 1978-05-26
Abstract: PURPOSE:To increase current amplification factor hFE by increasing the parasitic resistance in case the semiconductor device is formed through the Darlington connection between two units of transistors which share one semiconductor layer as the base. CONSTITUTION:N<->-type layer 2 is epitaxial-grown on N<+>-type Si substrate 1, and P-type region 3 to be the common base is formed by diffusion within layer 2 to be then divided with groove 5 filled up with plural units of glass. Then the surface of divided region 3 is covered with SiO2 film 6 with an opening drilled, and N<+>-type region 4a, 4b and 4c are formed into a ring shape each by diffusion within region 3 of one side, region 3 of the other side and inside region 4b respectively. Thus, region 4a, 4b and 4c are used as the emitter of input-step transistor Q1, the region for formation of the pinch resistance and the emitter of output-step transistor Q2 respectively. As a result, the current flowing from the base of Q1 to the base of Q2 is decreased by region 4b, thus increasing current amplification factor hFE.
Patent JP-S62219669-A (JP)
Title: Manufacture of thin-film semiconductor device
Inventor: SHIMIZU NOBUHIRO
IPC: H01L29/786
Filed: 1986-03-20
Abstract: PURPOSE:To improve the film quality of a gate insulating film, and to enhance characteristics such as the threshold voltage of a TFT by depositing a semiconductor film or a high melting-point metallic film on the gate insulating film and annealing these semiconductor film and high melting-point metallic film by beams to indirectly anneal the gate insulating film. CONSTITUTION:A semiconductor film 5 or a high melting-point metal is deposited onto a gate insulating film 4, and the semiconductor film 5 or the high melting-point metal is annealed by beams to indirectly anneal the gate insulating film 4. A first semiconductor film 2 is deposited on an insulating substrate 1 and crystallized through beam annealing, and a second semiconductor film 3 is deposited, patterned and annealed. The first semiconductor film 2 is etched through a photolithographic technique to isolate an element for a TFT, the gate insulating film 4 and the third semiconductor film 5 are deposited on the whole surface of the insulating substrate 1 and annealed by beams, and the third semiconductor film 5 is annealed while the gate insulating film 4 is also annealed by the heat of the film 5. Contact holes for a source and a drain are shaped, and a gate electrode 7, a source electrode 8 and a drain electrode 9 are prepared.
Patent JP-H03265368-A (JP)
Title: Picture processor
Inventor: ARAI KOJI
IPC: H04N1/48
Filed: 1990-03-15
Abstract: PURPOSE:To decrease a difference between an original picture and a picture on a monochroic display device by forming printing color picture signals Y, M, C based on color picture signals R, G, B separating a color picture signal by each color component and forming a monochroic picture signal based on the signals Y, M, C. CONSTITUTION:Each of analog picture signals R, G, B is amplified sequentially serially by an amplifier 102, converted into a digital picture signal by an A/D converter 103, inputted sequentially in latches 104-106, each of the digital picture signals R, G, B is separated in parallel by a color component and outputted from a latch 107. Then the signal is inputted to an RGB/YMC conversion section 108, in which the signal is converted into parallel digital signals Y, M, C and inputted to a YMC/monochroic conversion section 110, in which the signal is converted into a monochroic gradation signal. Thus, the difference between the picture on the monochroic display device and the original picture is reduced.
Patent JP-H06250515-A (JP)
Title: Developing device
Inventor: ENOKI SHIGEKAZU
IPC: G03G15/08
Filed: 1993-02-26
Abstract: PURPOSE:To prevent leakage of toner with a simple constitution, and form a developing image more excellently when developing operation is carried out. CONSTITUTION:A developing grid 20 having a large number of holes is arranged below an opening part 15 so as to cover a magnet 16. The magnet 16 forms a magnetic brush B such as blocking up the opening part 15 by passing through the holes of the developing grid 20. Toner T is received by this magnetic brush B and the developing grid 20 while dispersing pressure when it flows out from the opening part 15. When the magnet 16 is constituted so as to be able to vibrate and is vibrated, the magnetic brush B is cut off intermittently by the developing grid 20, and is carried or floates temporarily on the developing grid 20. The magnetic brush B in this condition is brought into contact softly with an electrostatic latent image by developing bias voltage impressed upon the developing grid 20.
Patent JP-H05265827-A (JP)
Title: File exchanging system for non-multiplex on-line system
IPC: G06F12/00
Filed: 1992-03-19
Abstract: PURPOSE:To exchange an active file from a distant place of an on-line system by changing a non-multiplex system into a virtual duplex system at the time of a process for exchanging the active file. CONSTITUTION:An active file updating instruction is performed by a maintenance person of an on-line system 7, an instructed device is changed into the virtual duplex system, and the current active file of a main storage device 1 is transferred to a backup area 2. After the operation is completed, a new file is transferred from the on-line system 7 to a new file area 3 of a virtual '1' system. After both of new and old files are completely transferred to both of systems in an external storage device 9, an on-line system 6 is reset, the new file of the '1' system is transferred to the main storage device 1, and the system is started. When any fault is generated in the '1' system, that system is immediately changed to a '0' system, the maintenance person judges as an active file exchanging error by an event that the on-line system 6 is started in the '0' system, and when the change into the '1' system is normally completed and the fault is recovered, the system is returned from the virtual duplex system to the single system.
Patent JP-H09256036-A (JP)
Title: Oxidation preventive and method for preventing oxidation of metal
Inventor: NAMEKAWA TAKASHI
IPC: C21D1/70
Filed: 1996-03-19
Abstract: PROBLEM TO BE SOLVED: To prevent the oxidation of grain boundaries in a metal and to remarkably improve the yield of the material by applying an oxidation preventive composed of the oxides of titanium, chromium, aluminum and silicon and an alkali aq. soln. to an Fe-Ni alloy material. SOLUTION: This is a method for preventing the oxidation of a metal in which the surface of a metal is coated with an oxidation preventive contg. at least one kind of high m.p. oxides of chromium, aluminum and silicon having >=1500 deg.C m.p., titanium oxides and an alkali aq. soln. (aq. soln. of sodium silicate), which is thereafter heated to a high temp. Furthermore, as for the oxidation preventive, except for water, it has a compsn. contg. titanium oxide, chromium oxide, aluminum oxide, silicon oxide and sodium silicate, and expressed in terms of the oxides of TiO2 , Cr2 O3 , Al2 O3 , SiO2 and Na2 SiO3 , respectively, the content of titanium oxide is regulated, by weight, to 5 to 40%, chromium oxide to 10 to 57%, aluminum oxide to 8 to 30%, silicon oxide to 10 to 35% and sodium silicate to 5 to 35%.
Patent JP-H10252664-A (JP)
Title: Vane pump
Inventor: SAITOU KUNIYUKI
IPC: F04C2/344
Filed: 1997-03-17
Abstract: PROBLEM TO BE SOLVED: To promptly move a vane to a normal operation position during starting without increasing the number of constitution parts and to prevent the occurrence of discharge pressure pulsation during normal operation. SOLUTION: A vane pump is formed such that notch parts 5A are formed in respective slits 5 radially formed in a rotor 4, and a temperature-sensitive member 15 having a thermal expansion factor higher than those of the slit 5 and a vane 6 is mounted on the notch part 5A. This constitution increases a gap between the slide surfaces of the slit 5 and the vane 6 and decreases viscous resistance of working oil exerted on the vane 6 during low temperature. Since the temperaturesensitive member 15 is expanded during high temperature, a gap between the slide surface of the slit 5 and the vane 6 is decreased and leakage of working oil through the gap is prevented from occurring.
Patent JP-S63315215-A (JP)
Inventor: JIYOSE EMU KASUTORO
IPC: B29C43/32
Filed: 1988-03-16
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S58181708-A (JP)
Title: Method for purifying boron nitride
Inventor: SATOU TADAO
IPC: C04B35/58
Filed: 1982-04-15
Abstract: PURPOSE:To obtain superhigh purity BN without damaging heating furnaces by heating BN powder to a specified temp. in a heating furnace using a graphite furnace material and further heating it in a heating furnace using a furnace material generating no gas contg. carbon under specified conditions. CONSTITUTION:BN powder or a sintered BN body is heat treated at 2,000- 2,200 deg.C, preferably 2,050-2,150 deg.C in a heating furnace using a graphite furnace material such as a graphite heater to remove most of hydrogen, carbon impurities and oxygen. It is further heated to 2,000-2,200 deg.C, preferably 2,050-2,150 deg.C in an atmosphere having a higher partial pressure of nitrogen than the decomposition pressure of BN in a heating furnace using a furnace material generating no gas contg. carbon such as an Mo heater. Thus, superhigh purity BN can be manufactured over a long term without damaging the Mo heater, etc.
Patent JP-H11258632-A (JP)
Title: Array substrate for display device
Inventor: DOJIRO MASAYUKI
IPC: G09F9/30
Filed: 1998-03-13
Abstract: PROBLEM TO BE SOLVED: To obviate the occurrence of the defects of interlayer insulating films and to prevent the decrease in yield in the array substrate formation without deforming of A1 by lamination of Al alloy and Mo films. SOLUTION: This array substrate has a thin-film transistor(TFT) which includes a scanning line 111, first insulating films 115, 117, a semiconductor film 120 and a source electrode 126b and drain electrode 126a connected to this semiconductor film 120, a signal line which is lead out of the drain electrode 126a and intersects approximately orthogonally with the scanning line 111 and a pixel electrode 131 which is electrically connected to the source electrode 126b. The scanning line 111 is deposited by laminating the Al-Nd alloy film 1110 at a film thickness 300 nm and the Mo film 1111 thereon at a film thickness 50 nm. Next, the first insulating films 115, 117 are formed by a CVD method at a substrate temp. of 350 deg.C.