baber/WOPTO huggingface dataset:
Patent TW-424276-B (TW)
Title: Device for dry etching a defined near-edge portion of at least one surface of a coated wafer, and method therefor by gaseous etching agent
Inventor: SUMNITSCH FRANZ
IPC: H01L21/3065
Filed: 1999-02-08
Granted: 2001-03-01
Abstract: The invention refers to a device and a method for dry etching a defined near-edge portion of a surface of a coated wafer (semiconductor disk).
Patent TW-396067-B (TW)
Title: Roller for a rolling stand
Inventor: HARTUNG HANS GEORG
IPC: B21B27/03
Filed: 1999-03-18
Granted: 2000-07-01
Abstract: A Roller for roller stand comprises a roller axle, which has at least one roller ring on it, and the roller axle is movable in axial direction. At least two roller components, which are located internally and confined by outer roller ring, have surface profile curved along axial direction. These profiles are 180 DEG off.
Patent TW-413986-B (TW)
Title: Programmable optical add/drop multiplexer
Inventor: LIU JIAN-YU
IPC: H04J14/02
Filed: 1999-03-31
Granted: 2000-12-01
Abstract: An optical wavelength division multiplex (WDM) demultiplexer can be provided in substantially passive form. In one embodiment a wavelength filter separates alternate channels to provide a first output containing even-numbered channels and a second output containing odd-numbered channels, each output having channels separated by a bandwidth twice the channel separation bandwidth of the original WDM signal.
Patent TW-414703-B (TW)
Title: An apparatus and a method for non-invasive measurement of the arterial blood pressure
Inventor: FORSTNER KLAUS
IPC: A61B5/02
Filed: 1999-05-26
Granted: 2000-12-11
Abstract: An apparatus (21) which measures the arterial blood pressure at the human wrist (1) is provided with a cuff (22) having a shape adapted to be placed in a predetermined position around the wrist (1). The cuff (22) has one or two inflatable measuring bladders (23a, 23b). The bladders (23a, 23b) are arranged and have a size in such a way that each bladder (23a, 23b) covers only one of either the radial (2) and the ulnar (3) artery.
Patent TW-523516-B (TW)
Title: Spiro[piperidine-4,1'-pyrrolo[3,4-C]pyrrole]
Inventor: ADAM GEO
IPC: A61K31/505
Filed: 1999-06-21
Granted: 2003-03-11
Abstract: The present invention relates to compounds of the general formula (I) wherein the substituents are described in the application and to pharmaceutically acceptable acid addition salts thereof. The compound of the invention are useful in the treatment of diseases related to the orphanin FQ (OFQ) receptor, which include psychiatric, neurological and physiological disorders, such as anxiety and stress disorders, depression, trauma, memory loss due to Alzheimer's disease or other dementias, deficits in cognition and learning, epilepsy and convulsions, acute and/or chronic pain conditions, and symptoms of addictive drug withdrawal, control of water balance, Na+ excretion, arterial blood pressure disorders and metabolic disorders such as obesity.
Patent TW-417174-B (TW)
Title: Plasma processing method
Inventor: AMANO HIDEAKI
IPC: C23F4/00
Filed: 1999-06-30
Granted: 2001-01-01
Abstract: The object of this invention is to shorten the preheating time period, such as when film forming follows preheating. The current values of the main electromagnetic coil 26 and the auxiliary electromagnetic coil 27 are adjusted between the preheating time and the film forming time, thereby changing the shape of the magnetic field. As such, while the uniformity of the magnetic field is large during film forming, the magnetic flux density is small, and while the uniformity of the magnetic field is small during preheating, the magnetic flux density is large. As a result, generally uniform plasma is generated on the surface inside of the wafer W during film forming so that uniform film forming processing can proceed. On one hand , while the uniformity during preheating is not ideal, the density of plasma that is generated will be larger than the plasma during film forming. Thus, the preheating time period can be shortened since the input amount of heat for the wafer W can be more than that during film forming.
Patent TW-436668-B (TW)
Title: A hidden image dot matrix hologram
Inventor: YE SHENG-LI
IPC: G03H1/18
Filed: 1999-07-23
Granted: 2001-05-28
Abstract: A hidden image dot matrix hologram comprises at least one hiding region of hidden image except the holographic regions. The region of hidden image is formed by arranging many identical blocks of grating dots in two dimension periodically, by shining laser light on the front face of the hiding region of hidden image with proper direction and proper focus condition. The deigned hidden image designed can be formed on the front face of the hologram; the number of grating dots included in each grating dot region is equal to the number of bright element dots forming the hidden image, and different grating dots in the same block of grating dots are designed to have different bright element dots which can form the hidden image by diffraction. Under general illumination, the region of hidden image can show a dot matrix hologram arranged orderly, uniformly with dynamic effect. Also, when the lasers shines on the hiding region of hidden image with the same condition, wherever the hiding region of hidden image is illuminated, the diffracted hidden image won't have significant shifting in position relative to the laser.
Patent TW-431101-B (TW)
Title: Apparatus for and method of receiving information, system for receiving information, apparatus for and method of sending information, and system for sending and receiving information
Inventor: CHATANI MASAYUKI
IPC: A63F13/92
Filed: 1999-07-27
Granted: 2001-04-21
Abstract: A system for sending and receiving information is capable of sending and receiving a large amount of data. A CPU (22) of a portable computer (4) has an identification code comparator (61) for comparing an identification code preset by a video game machine (5) with an identification code (DF) added to a received data string (DX), and a readout controller (62) having a selective reception function to selectively receive the data string (DX) depending on a compared result from the identification code comparator (61).
Patent TW-432508-B (TW)
Title: Method of fabricating an integrated circuit used to prevent undercutting due to wet etching
Inventor: WANG LIN-SUNG
IPC: H01L29/51
Filed: 1999-08-02
Granted: 2001-05-01
Abstract: A method of fabricating an integrated circuit used to prevent undercutting due to wet etching, comprises providing a substrate; forming a gate on the substrate; forming a conformal silicon oxide film covering the gate on the substrate; performing an implantation of nitrogen ions to nitridize the surface of the silicon oxide film; performing a high temperature chemical vapor phase deposition step to deposit a dielectric layer covering the silicon oxide film at which the nitrogen ions in the nitrided silicon oxide film will bond with the oxygen atoms or silicon atoms in the silicon oxide film to form Si-N bonds or Si-O-N bonds; using the silicon oxide film on the gate as an etch stop-point to etch back the dielectric layer to form a spacer on the two sides of the gate, in which the etching back process comprises an over etching step for fully removing the dielectric layer on the gate at which time the nitrided silicon oxide film on the two sides of the gate, that has not been covered by the spacer, will be partially removed; using a wet etching process to completely remove the silicon oxide film on the two sides of the gate that is not covered the spacer, at which time the nitrided silicon oxide film covered by the spacer will not have undercutting due to the existence of the Si-N bonds or Si-O-N bonds.
Patent TW-552301-B (TW)
Title: Polarizing device, dichroic polarizing layer and optical device
Inventor: SAHOUANI HASSAN
IPC: G02F1/13357
Filed: 1999-10-07
Granted: 2003-09-11
Abstract: A polarizer is described that is formed of a host matrix and a guest dye. The host matrix may be a lyotropic liquid crystal matrix having a predetermined orientation. A guest pleochroic dye may be disposed within the host lyotropic liquid crystal matrix. The guest pleochroic dye is oriented by the orientation of the host matrix.
Patent TW-523558-B (TW)
Title: Method and apparatus for electrochemical mechanical deposition
Inventor: TALIEH HOMAYOUN
IPC: B24B37/26
Filed: 1999-11-09
Granted: 2003-03-11
Abstract: The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermined area by mechanically polishing the other areas while the conductive material is being applied.
Patent TW-449636-B (TW)
Title: Vacuum flow guiding construction method for building sickness prevention and cure
Inventor: JANG DE-JIUN
IPC: E04G23/02
Filed: 1999-12-07
Granted: 2001-08-11
Abstract: This invention of a vacuum flow guiding construction method for building sickness prevention and cure aims to provide an undamaged construction system to prevent and recover building illnesses eternally. Through illness inspecting process, it identifies the construction area. Then the inner and outer vacuum flow guiding system is set. The system to extract applied agent is operated and injects the agent into illness area through drilled hole or sealed bag with flow guiding net. The system is stopped at expected time. After it reacts and sets completely, the system is detached and the recovery construction work is completed.
Patent TW-436932-B (TW)
Title: Method for fabricating ferroelectric field effect transistor
Inventor: HAYASHI SHINICHIRO
IPC: H01L21/314
Filed: 1999-12-31
Granted: 2001-05-28
Abstract: A method for forming an interface insulator layer (24) in a ferroelectric FET (10) memory, in which a liquid precursor is applied to a semiconductor substrate (14). Preferably, the liquid precursor is an enhanced metalorganic decomposition (""EMOD"") precursor, applied using a liquid-source misted deposition technique. Preferably, the EMOD precursor solution applied to the substrate (14) contains metal ethylhexanoates containing metal moieties in relative molar proportions for forming an interface insulator layer (24) containing ZrO2, CeO2, Y2O3 or (Ce1-xZrx)O2, 0≤x≤1.
Patent TW-510954-B (TW)
Title: Reduction gear comprising a crown gear and worm screw first stage and a second stage with an epicycloidal group
Inventor: COROLUPPI WALTER
IPC: F16H3/00
Filed: 2000-04-08
Granted: 2002-11-21
Abstract: Gearmotor characterized by the fact that it comprises, fitted inside the same box: an input shaft with a worm screw; an output shaft at right angles to the preceding; an idle crown gear on said output shaft engaging said worm screw; a bushing with external toothing, integral with said crown gear; a series of planetary gears engaging the toothing of said bushing and with a crown gear, external, fixed and integral with the box; a support of said planetary gears integral with said output shaft.
Patent TW-463259-B (TW)
Title: Etching method of high aspect ratio
Inventor: JOU CHIUAN-CHI
IPC: H01L21/302
Filed: 2000-06-14
Granted: 2001-11-11
Abstract: The present invention relates to a kind of high aspect ratio etching method, in which the etching method includes the followings. A plasma etching condition having polymer reaction is used to etch material layer anisotropically so as to form an opening. The polymer reaction will form the polymer film on the sidewall of opening and the bottom portion of opening. This polymer film will slow down the etching rate of plasma and even make the situation of stopping etching occur. Another plasma etching condition is used to etch polymer film on the bottom portion of opening anisotropically until the polymer film on the bottom portion of opening is completely removed. The same plasma etching condition is continuously used to conduct the anisotropic etching process onto the material layer till the etching of opening is completed.
Patent TW-457709-B (TW)
Title: Method for providing a dopant level for polysilicon for flash memory devices
Inventor: CHANG KENT KUOHUA
IPC: H01L21/8247
Filed: 2000-08-05
Granted: 2001-10-01
Abstract: The present invention provides a method and a NAND-type flash memory device. The method includes forming a select gate oxide layer in a select transistor area of a substrate and a tunnel oxide layer in a memory cell area of the substrate; forming a doped amorphous silicon layer on the select gate oxide layer and the tunnel oxide layer, the doped amorphous silicon layer having a dopant level which simultaneously avoids a select transistor word line high resistance problem and a charge gain/charge loss problem; forming an insulating layer on the doped amorphous silicon layer; forming a control gate layer on the insulating layer; and etching at least the doped amorphous silicon layer, the insulating layer, and the control gate layer to form at least one memory cell stack structure and at least one select transistor stack structure. In a preferred embodiment, the polysilicon layer which forms both the floating gate of the flash memory cell and the select gate of the select transistor of the device is doped with between approximately 5x10<SP>18</SP> and 8x10<SP>19</SP> ions/cm<SP>3</SP> of phosphorus. With this dopant level, the contact resistance of the select transistor's control gate is low, thus keeping the word line resistivity of the device low. Simultaneously, contamination of the tunnel oxide of the flash memory cell by the dopant is limited, allowing for the interface between the floating gate and the tunnel oxide to be smooth, which prevents charge gain/loss problems. Thus, the reliability of the device is increased.
Patent TW-522338-B (TW)
Title: Method for replacing functions of system subroutine in operating system
Inventor: CHEN SHU-CHING
IPC: G06F9/06
Filed: 2000-08-18
Granted: 2003-03-01
Abstract: A method for replacing functions of system subroutine in different data format, which includes the following steps: after configuring the system subroutine to be replaced, determining if the abstracted is 32-bit system subroutine or 16-bit system subroutine; after abstracting the address of the system subroutine, replacing with the self-defined system subroutine; when the self-defined 32-bit system subroutine is called to 16-bit system subroutine, or the self-defined 16-bit system subroutine is called to 32-bit system subroutine for data format transformation to meet the requirement of system subroutine; finally, when the self-defined system subroutine is completed, the address of abstracted system subroutine is recovered to make the operating system back to normal operation.
Patent TW-593674-B (TW)
Title: Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
Inventor: BESSHO KEIICHI
IPC: H01L21/02
Filed: 2000-09-13
Granted: 2004-06-21
Abstract: Provided are a cleaning agent for semiconductor parts, which can decrease a load on the environment and has a high cleaning effect on CMP (chemical mechanical polishing) abrasive particles, metallic impurities and other impurities left on the semiconductor parts such as semiconductor substrates after the CMP, comprising a (co)polymer having at least one kind of group selected from the group consisting of sulfonic acid (salt) groups and carboxylic acid (salt) groups, the cleaning agent further containing a phosphonic acid (salt) group-containing (co)polymer, a phosphonic acid compound or a surfactant as needed; and a method for cleaning semiconductor parts with the above cleaning agent.
Patent TW-492921-B (TW)
Title: Method for producing composite non-woven cloth by carding and air-laying
Inventor: DAI RUNG-JI
IPC: D04H1/407
Filed: 2000-10-02
Granted: 2002-07-01
Abstract: The present invention provides a method for producing a composite non-woven cloth by carding and air-laying, which comprises: carding a fiber by a carding machine to form a carded web; using an air-laying device to perform an air-laying operation on a fibrous, powdery or granular material to form an air-laid web, in which the carding step and the air-laying step are interchangeable, and the carding machine and the air-laying device are installed on a same production line; and combining the webs into a composite non-woven cloth. Since the carding process and the air-laying process are performed on the same production line, an off-line production of the air-laid web can be removed, thereby reducing the amount of thermoplastic polymer or fiber used in order to increase the web strength, and reducing the production cost.
Patent TW-538346-B (TW)
Title: Instant selective multiple soft document sharing between multiple heterogeneous computing devices
Inventor: ALUMO H Y
IPC: G06F9/45
Filed: 2000-10-12
Granted: 2003-06-21
Abstract: A system and method for providing dynamically shared documents to multiple computing devices. In a preferred embodiment, the system includes a hub and a plurality of computing devices in physical proximity with the hub. Each of the plurality of computing devices communicates with the hub via a wireless connection. The hub acts as a pass-through device receiving and transmitting requests from a requesting computing device to other computing devices and receiving and transmitting answers from the other computing devices to the requesting computing device. Each computing device translates requests and shared documents into a system independent language before transmitting the request of the document to the hub and each computing device translates received documents from the system independent language into a data format preferred by that particular computing device. Thus, documents may be securely shared between computing devices having different operating systems and data formats without having a physical network connection. Furthermore, the hub is portable, thus allowing the sharing of documents at any location in which several users have gathered for a meeting.
Patent TW-581709-B (TW)
Title: Heat-resistant microporous film
Inventor: HOSHUYAMA IZUMI
IPC: H01M50/494
Filed: 2000-10-19
Granted: 2004-04-01
Abstract: A heat-resistant microporous film which comprises a thermoplastic resin having a crystal melting point of 140 to 300 DEG C and has a layer structure formed in the direction of thickness is provided, in which the layer structure comprises 5 to 100% of a layer defined by (A) below and 0 to 95% of a layer defined by (B) below: (A) a layer having only micropores which are voids within a spherulite, and (B) a layer having micropores which are voids within a spherulite and micropores which are voids being present between spherulites.
Patent TW-I260969-B (TW)
Title: Biocide-polyester concentrates and biocidal compositions prepared therefrom
Inventor: STADLER URS LEO
IPC: A01N61/00
Filed: 2000-12-18
Granted: 2006-09-01
Abstract: Concentrates of various classical biocides in a polyester carrier resin when incorporated into a substrate resin, preferably a polyolefin such as polypropylene or polyethylene, provide the substrate polymer which biocidal activity with superior resistance to discoloration (yellowing) than when the biocide is directly incorporated into the substrate polymer as a powder at the same total concentration.
Patent TW-505774-B (TW)
Title: A hydrogen cooled hydride storage unit incorporating porous encapsulant material to prevent alloy entrainment
Inventor: STETSON NED T
IPC: C22C23/02
Filed: 2000-12-18
Granted: 2002-10-11
Abstract: A hydrogen gas cooled hydrogen storage element which includes a hydrogen storage alloy material in which hydrogen flow channels are provided. The flow channels provide pathways through the hydrogen storage material to allow for high speed hydrogen gas flow. A portion of the high speed hydrogen flow is stored within the storage material which releases its heat of hydride formation. The remainder of the hydrogen flows through the hydrogen storage material at a sufficient mass flow rate to remove the heat of hydride formation. The unit also includes an encapsulant to prevent any loose particles of the storage material from becoming entrained in the high flow rate hydrogen.
Patent TW-504658-B (TW)
Title: Image processing method with sub-pixels
Inventor: HUANG YAN-REN
IPC: G06K9/34
Filed: 2000-12-21
Granted: 2002-10-01
Abstract: The present invention relates to an image processing method with sub-pixels, which is applied in an image processing device. The method comprises the steps of: providing a plurality of known pixels, using a mathematical algorithm to determine an optimal equation representing the plurality of known pixels, determining the required sub-pixel between any two adjacent known pixels, and displaying a corresponding image on the image processing device by amending the sub-pixels.
Patent TW-473926-B (TW)
Title: Damascene processing
Inventor: LIN JIAN-SHING
IPC: H01L21/768
Filed: 2001-01-03
Granted: 2002-01-21
Abstract: A damascene processing, which includes the following steps: providing a substrate with a gate, and a source/drain region, a spacer and a substrate with the first dielectric layer; forming the contact opening in the first dielectric layer and exposing part of the gate and the source/drain region; next, forming the contact in the contact opening; sequentially forming the blocking layer and the second dielectric layer on the first dielectric layer and the contact; then, forming the opening in the second dielectric layer and exposing the contact; forming the metal wiring in the opening.
Patent TW-490542-B (TW)
Title: Plant for delivering an ultrapure gas, comprising a purification unit
Inventor: GIRARD JEAN MARC
IPC: F17C13/04
Filed: 2001-01-18
Granted: 2002-06-11
Abstract: The plant for delivering an ultrapure gas comprises a main purification unit (22), installed between a gas feed inlet (16) and an ultrapure-gas delivery outlet (18), and a bypass loop (28) mounted in parallel with the said main purification unit (22). The said bypass loop (28) includes an auxiliary purification unit (30). Application to the delivery of ultrapure helium or ultrapure hydrogen.
Patent TW-506122-B (TW)
Title: Semiconductor-element and its production method
Inventor: LACHNER DR RUDOLF
IPC: H01L21/768
Filed: 2001-02-23
Granted: 2002-10-11
Abstract: A thin under electrode-layer (2) with optimally protected capacitor-dielectric (3) is produced and structurized, and on it a general metal-plane for conductor-tracks is applied as an upper electrode (11) and structurized. The capacitor-dielectric can be deposited on a very smooth metallic surface (for example, TiN) and after the deposition can be sealed by a thin, also metallic, layer (for example, TiN) and protected, so that it will not become thin or be damaged by other steps in the process.