baber/WOPTO huggingface dataset:
Patent TW-385355-B (TW)
Title: Zero point position-determining mechanism for pressurized fluid-driven apparatuses
Inventor: TOSHIHARU WADA
IPC: F15B21/04
Filed: 1999-03-19
Granted: 2000-03-21
Abstract: Disclosed is a zero point position-determining mechanism for pressurized fluid-driven apparatuses, comprising an oil supply-adjusting knob formed with an arrow-shaped recess for indicating a zero point position, an insert member for being internally fitted to a hole of the oil supply-adjusting knob, a stopper for setting an assembled state of the oil supply-adjusting knob and the insert member to be at a zero point position, and a first spline section and a second spline section for being fitted to one another to determine the position so that the zero point position of the recess corresponds to that of a holder.
Patent TW-558687-B (TW)
Title: Method for automatically segmenting and recognizing Chinese handwriting character strings and system for using the same method
Inventor: TANG DONALD T
IPC: G06V30/196
Filed: 1999-03-25
Granted: 2003-10-21
Abstract: The invention discloses a method for automatically segmenting and recognizing Chinese handwriting character strings continuously inputted by a user, which comprises the following procedures: building up geometric pattern and language pattern; finding out all potential segmenting solutions of continuously inputted handwriting character strings based on the relevant time sequence data and geometric pattern; proceeding stroke recognition between any two segmenting points for each solution and computing a correct probability of pattern recognition; using a language pattern to revise the probability of pattern recognition; and selecting the recognition result with a maximum probability and the corresponding segmenting solution of the pattern recognition.
Patent TW-408462-B (TW)
Title: Thin film resistor used in the semiconductor chip and the manufacture method thereof
Inventor: LEE JIA-SHENG
IPC: H01L23/522
Filed: 1999-03-26
Granted: 2000-10-11
Abstract: This invention provides a thin film resistor used in the semiconductor and the manufacture method thereof, so as to fabricate the thin-film resistor having stable resistor value. Said manufacture method is to form a resistor layer and a passivation layer in order in one predetermined region on the dielectrics surface of said semiconductor chip. Then, an insulated layer is formed on the surface of said semiconductor chip to cover the surface and the lateral side of said passivation layer, the lateral side of said resistor layer and the dielectrics surface outside said predetermined region. Then, a dry-etching process is performed on said insulated layer to form two voids which could pass through the surface of said passivation layer. Then, a wet etching process is performed toward the passivation layer beneath the two voids of said insulated layer. Then, a plug which could electrical-connecting two ends of said resistor layer is formed on the two voids of said insulated layer and of said passivation layer. Further, two electrical-conductive layers are formed on the two plugs. The two electrical-conductive layers and the two plugs could be used as the electrical connecting wiring lines on two ends of said resistor layer.
Patent TW-512143-B (TW)
Title: Method of producing ethylbenzene
Inventor: SY ANGEL SIA
IPC: C07C2/64
Filed: 1999-04-07
Granted: 2002-12-01
Abstract: Ethylbenze (18) is produced from benzene (16) and ethylene (14) in an alkylation reactor (12) wherein the feedstocks also contain propylbenzenes (26) and/or components that produce propylbenzene (26) Polyethylbenzenes (24) are also produced in the process. The ethylbenzene product (28) unreacted benzene (16) are separated and then the propylbenzenes (26) are separated from the polyethylbenzenes (24) by distillation (20). The propylbenzenes(26) are destroyed in a vapor-phase reactor (12) and the polyethylbenzenes (24) are transalkylated (30) with benzene (32) in a liquid or partial liquid phase at a lower temperature.
Patent TW-400407-B (TW)
Title: The constructing methods of the main doorframes and the auxiliaries used to assemble the main doorframes
Inventor: LIN JIUN-JEN
IPC: E06B1/56
Filed: 1999-04-09
Granted: 2000-08-01
Abstract: The purpose of this invention is to offer an assembling construction method for the main doorframe. The assembling method is to manufacture the auxiliary doorframe, the fixing construction set and the main doorframe in the factories. And then, during the period of filling the brick walls at the sites of construction or after the period of construction completion, using the fixing construction set to erect the above-mentioned auxiliary door frames on the anticipative positions. Furthermore, cement is plastered the frames and is flushed with the walls. Finally, the doorframe is erected and fixed inside the inner edges of the auxiliary frames. This construction method involves two studs and one or two transverse slats form the auxiliary doorframe in order to install at the positions of the construction during the working period. When all the constructions are completed, the main doorframe is mounted. This method could avoid stains to get a nice-looking doorframe and protect it against bumps to maintain the quality.
Patent TW-446537-B (TW)
Title: Automatic rolling system of rice seedling
Inventor: FENG DING-SHU
IPC: A01C11/02
Filed: 1999-07-16
Granted: 2001-07-21
Abstract: An automatic rolling system of rice seedling can roll up the seedling mat from tray as an egg-roller manner and put 3 seedling mats together in a tray for easy transportation. The automatic rolling system can be divided to two portions: one is rolling unit, the other is putting unit. The pneumatics mechanism was designed and programming logic controller (PLC) was used to process sequence control in the system. Experimental results show that the designed mechanism can satisfactorily achieve the desired effect. More than 95.2% of seedlings can be rolled up from tray successfully. And more than 90.5% of seedling can be putted down in the tray smoothly.
Patent TW-411553-B (TW)
Title: Method for forming curved oxide on bottom of trench
Inventor: CHEN JIAN-HUNG
IPC: H01L29/423
Filed: 1999-08-04
Granted: 2000-11-11
Abstract: A method for forming curved oxide on the bottom of a trench is disclosed. First, a pad oxide layer is formed on a semiconductor substrate and a silicon nitride layer is formed on the pad oxide layer. The silicon nitride layer, the pad oxide and the semiconductor substrate are patterned and etched to define a trench. A silicon dioxide layer is deposited on the silicon nitride layer and formed within the trench to have an overhang portion at the top corner. Then, the silicon dioxide layer is subject to anisotropic etching to form curved oxide on the bottom of the trench. Next, an isotropic etching procedure is applied to remove the portion of the silicon dioxide layer on the silicon nitride layer and at the sidewalls of the trench.
Patent TW-502022-B (TW)
Title: 4-amino substituted-2-substituted-l,2,3,4- tetrahydroquinolines
Inventor: DENINNO MICHAEL P
IPC: C07D417/12
Filed: 1999-09-10
Granted: 2002-09-11
Abstract: Cholesteryl ester transfer protein inhibitors, pharmaceutical compositions containing such inhibitors and the use of such inhibitors to elevate certain plasma lipid levels, including high density lipoproteln-cholesterol and to lower certain other plasma lipid levels, such as LDL-cholesterol and triglycerides and accordingly to treat diseases which are exacerbated by low levels of HDL cholesterol and/or high levels of LDL-cholesterol and triglycerides, such as atherosclerosis and cardiovascular diseases in some mammals, including humans.
Patent TW-561658-B (TW)
Title: Overvoltage protection device including wafer of varistor material
Inventor: ATKINS IAN PAUL
IPC: H01C7/12
Filed: 1999-09-16
Granted: 2003-11-11
Abstract: An overvoltage protection device includes a first electrode member having a first substantially planar contact surface and a second electrode member having a second substantially planar contact surface facing the first contact surface. A wafer formed of varistor material and having first and second opposed, substantially planar wafer surfaces is positioned between the first and second contact surfaces with the first and second wafer surfaces engaging the first and second contact surfaces, respectively. The contact surfaces may apply a load to the wafer surfaces. Preferably, the electrode members have a combined thermal mass which is substantially greater than a thermal mass of the wafer. The wafer may be formed by slicing a rod of varistor material. The device may include a housing including the first substantially planar contact surface and a sidewall, the housing defining a cavity within which the second electrode is disposed.
Patent TW-454193-B (TW)
Title: Wordline driver for flash electrically erasable programmable read only memory (EEPROM)
Inventor: BILL COLIN S
IPC: G11C8/08
Filed: 1999-09-28
Granted: 2001-09-11
Abstract: A flash electrically-erasable programmable read-only memory (EEPROM) (10) includes a plurality of floating gate transistor memory cells (32), a plurality of wordlines (WL) connected to the cells (32) and a power source (13) for generating a low power supply voltage on the order of 3 V or less. A wordline driver (50) includes a booster (52) for boosting the supply voltage to produce a wordline read voltage which is higher than the supply voltage, and applying the wordline voltage to a wordline. An upper clamp (54) limits a maximum value of the wordline voltage to prevent read disturb. The upper clamp (54) can be configured to reduce an amount by which the maximum value varies with the supply voltage, or to limit the maximum value to substantially a predetermined value. A lower clamp (56) limits the wordline voltage to a minimum value which is higher than the supply voltage and lower than the maximum value for a predetermined length of time at the beginning of the read operation to ensure that the cells (32) have sufficient read current and to reduce the amount by which the minimum value varies with the supply voltage.
Patent TW-451165-B (TW)
Title: Method and device for calculating graphics attributes in graphics display system
Inventor: KAO MING-TSAN
IPC: G06T1/20
Filed: 1999-10-27
Granted: 2001-08-21
Abstract: A 3D graphics display system with arithmetic unit is used to compute attributes of several continuous pixels for a specific graphics attribute. By means of time-sharing method of arithmetic unit, a single arithmetic unit can compute plural graphics attributes. Each graphics attribute of continuous image is suspended in a particular bundled FIFO buffer. The FIFO buffer has a group of output data paths used to send out the attribute in each computation cycle, in which the plural bundled FIFO buffers are used to delay the multiple attribute values of graphics attribute. After the attribute values of all graphics attribute become available, a highly effective and low-cost 3D graphics display system tool can be secured with the suspended attribute value of the required pixel group issued by individual data path and pipeline design structure.
Patent TW-430873-B (TW)
Title: Form of microscopic dot mark using laser beam and marking method thereof
Inventor: CHIBA TEEICHIROU
IPC: H01L23/544
Filed: 1999-11-17
Granted: 2001-04-21
Abstract: The object of the present invention is to provide a dot mark which is microscopic but is superior in visibility and has a singular form, and a dot marking method for enabling accurate formation of a microscopic dot. To achieve the object, the laser beams are radiated by a laser oscillator (2), whose energy distribution is homogenized by a beam homogenizer (3). A desired pattern is formed by control of a liquid crystal mask (4), in which the maximum length of each pixel is 50 to 2000 mu m. The mask is irradiated by the laser beam homogenized by beam homogenizer (3). The energy density of a divided laser beam, passed through the mask, is adjusted to 1.0 to 3.7 J/cm<SP>2</SP> and each laser beam that passes through the mask (4) in each one dot is reduced by a lens unit (6) onto a dot having a maximum length of 1 to 15 mu m, thereby forming a dot mark on the surface of an article to be marked. The dot mark obtained consists of a single dot mark in each laser irradiated point. The length of the central part of the above mark which extends along the surface of the rising part swelling upward from the surface of the article is 1 to 15 mu m. The height of the swelling part is 0.01 to 5 mu m and, even through the dot is microscopic, it is superior in visibility, such that the freedom degree in the marking field and marking duration can be increased.
Patent TW-565448-B (TW)
Title: Controlled-release dosage forms comprising zolpidem or a salt thereof
Inventor: ALAUX GERARD
IPC: A61K31/496
Filed: 1999-12-03
Granted: 2003-12-11
Abstract: The present invention relates to controlled-release dosage forms of zolpidem or salts thereof adapted to release the short acting hypnotic over a predetermined time period, according to a biphasic profile of dissolution, where the first phase is an immediate release phase and the second phase is a prolonged release phase and particular embodiments thereof intended to avoid abuse.
Patent TW-448574-B (TW)
Title: High voltage device structure and the manufacturing method thereof
Inventor: YANG SHENG-SHIUNG
IPC: H01L27/115
Filed: 1999-12-29
Granted: 2001-08-01
Abstract: A high voltage device comprises: a substrate of the first conductive type, a gate structure, a well region of the second conductive type, a shallow trench isolation, a first doped region of the first conductive type, a second doped region of the first conductive type and source/drain region of the second conductive type in which the gate structure is on the substrate; the well region is located in the substrate on both sides of the gate structure; and the shallow trench isolation is located in the well region; the gate structure extends and covers part of the well region and the shallow trench isolation. The first doped region is located in the well region under the shallow trench isolation and the second doped region is located in the well region under the first doped region; furthermore, the source/drain region is located in the well region exposed from the gate structure and the shallow trench isolation.
Patent TW-448467-B (TW)
Title: Method and system for operating a variable aperture in an ion implanter
Inventor: SUGITANI MICHIRO
IPC: H01J37/09
Filed: 2000-02-03
Granted: 2001-08-01
Abstract: A system and method are provided for operating a variable aperture (30) for adjusting the amount of ion beam current passing therethrough in an ion implantation system (10). The system and method comprise means or steps for (I) measuring ion beam current at an implanter location using a current detector (35); (ii) comparing the measured ion beam current with a desired ion beam current; (iii) outputting a control signal (126, 128) based on the comparison of the measured ion beam current with the desired ion beam current; and (iv) adjusting a gap (50), through which through ion beam passes and which is defined by opposing first and second aperture plates (44A, 44B), in response to the control signal to control the amount of ion beam current passing therethrough. The current detector (35) provides ion beam current feedback, and a position sensor (116, 118) may be utilized to provide aperture plate (44A, 44B) position feedback. The system and method provide a quick, direct, and precise mechanism for effecting significant changes in ion beam current without requiring re-tuning of the source. The gap (50) of the aperture (44) is adjustable in increments of about 5 microns (mu m).
Patent TW-463355-B (TW)
Title: Semiconductor memory-arrangement with bit-lines-twist
Inventor: FEURLE ROBERT
IPC: H01L27/108
Filed: 2000-02-22
Granted: 2001-11-11
Abstract: This invention relates to a semiconductor memory-arrangement with word-lines (WL1 to WL5) and bit-lines (BL1 to BL5), in which the twist-free bit-lines (BL3, BL4, BL7, BL8) are provided with Dummy-Contacts (8 to 11), which extend to the word-line-plane, so that the word-lines have a homogeneous environment.
Patent TW-425470-B (TW)
Title: An ice storage type refrigerating air conditioning system
Inventor: LIAU BEN-JENG
IPC: F24F5/00
Filed: 2000-03-30
Granted: 2001-03-11
Abstract: The present invention relates to an ice storage type refrigerating air conditioning system, which system keeps the water reservoir of a building in an adiabatic state and uses it as an adiabatic water reservoir for the ice storage refrigerating air conditioning system. The adiabatic water reservoir is installed with cooling disc pipe and air injecting pipe inside so that the air with high pressure and low temperature produced by the compressor is guided into the air injecting pipe and injected into the water inside the adiabatic water reservoir. Those air bubbles within water generated from the air with high pressure and low temperature absorb heat from water due to the bubble diffusion effect so as to lower the temperature of water, and when the temperature of water is lowed down close to 4 DEG C the air with high pressure and low temperature is directed into the cooling disc pipe to continuously absorb heat from water so that the water inside the reservoir is frozen as ice needed by the ice storage type refrigerating air conditioning system. The present invention of an ice storage type refrigerating air conditioning system, by the direct heat transfer between water and air bubbles diffused into water, the heat transfer and ice making efficiency is improved and the ice making time is reduced, thus it can effectively make use of water reservoir source of building to improve ice manufacturing efficiency and reduce power consumption.
Patent TW-I232212-B (TW)
Title: Improved acrylonitrile recovery process
Inventor: GODBOLE SANJAY P
IPC: C07C255/08
Filed: 2000-04-05
Granted: 2005-05-11
Abstract: The process of the present invention comprises transporting a reactor effluent containing acrylonitrile/methacrylonitrile to a first column (quench) where the reactor effluent is cooled with a first aqueous stream, transporting the cooled effluent into an indirect contact cooler to condensed at least some of the cooled effluent to form a condensate comprising water and acrylonitrile/methacrylonitrile, transporting the remaining cooled gaseous effluent containing acrylonitrile/methacrylonitrile into a second column (absorber) where the cooled effluent is contacted with a second aqueous stream to absorb substantially all of the remaining acrylonitrile/methacrylonitrile into the second aqueous stream, transporting the second aqueous stream containing the acrylonitrile/methacrylonitrile to a first distillation column (recovery column) for separation of the crude acrylonitrile/methacrylonitrile from the second aqueous stream, and transporting the separated crude acrylonitrile/methacrylonitrile to a second distillation column (heads column) to remove at least some impurities from the crude acrylonitrile/methacrylonitrile, and transporting the partially purified acrylonitrile/methacrylonitrile to a third distillation column (product column) to further purify the acrylonitrile/methacrylonitrile, and recovering the purified acrylonitrile/methacrylonitrile, wherein the improvement comprises transporting the condensate formed in the indirect contact cooler to a decanter where the condensate is separated into an organic phase comprising acrylonitrile/methacrylonitrile, an aqueous phase and a vapor phase, and the organic phase is introduced into the recovery column without passing through the absorber column.
Patent TW-476830-B (TW)
Title: Buttonhole sewing machine and method of forming a buttonhole seam
Inventor: ISHII KAZUAKI
IPC: D05B19/04
Filed: 2000-05-04
Granted: 2002-02-21
Abstract: When a buttonhole seam is formed around a buttonhole formed by a cutting operation using a cloth-cutting knife, reinforcing seams are provided for the buttonhole seam to prevent looseness and separation of fibers of a cloth around the buttonhole which must be sewed. A buttonhole sewing machine incorporating seam forming means for forming a buttonhole seam consisting of a pair of side seams on the two sides of a cut buttonhole which is formed in a material to be sewed and bartacking seam at least formed at an end of the buttonhole such that the bartacking seam is continued from the two side seams, wherein zigzag seams each having a width smaller than that of each side seams at a higher density are formed at positions at which the side seams are formed.
Patent TW-473847-B (TW)
Title: Substrate processing apparatus
Inventor: UEDA ISSEI
IPC: H01L21/027
Filed: 2000-06-08
Granted: 2002-01-21
Abstract: First, second and third processing stations are connected to a cassette station disposed for transfer and access of wafer cassettes. These processing stations are divided into processing units for performing resist coating process and developing process, which includes processing blocks having second cooling portions, and transfer blocks having wafer transfer devices, heating portions and first cooling portions. The processing blocks form a high-precision temperature-controlled adjustment environment. In such a construction, since the wafers, the temperature thereof being controlled with high-precision by means of the second cooling portions, are transferred through a high-precision adjustment environment to the processing units, the temperature changes thereof can be inhibited during the course of transfer. Besides, since the coating process of the coating solution is performed under the conditions that the temperature of the substrates is maintained with high-precision, the ""pass"" rate in processing can be increased.
Patent TW-476963-B (TW)
Title: Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
Inventor: BILL COLIN
IPC: G11C16/06
Filed: 2000-08-11
Granted: 2002-02-21
Abstract: A method of and a flash memory device for quenching bitline leakage current during programming and over-erase correction operations. The flash memory cells are organized in an array of I/O blocks with each block having columns and rows. An array of resistors is connected between the common array source connection and ground. The array of resistors is made up of sets of resistors, each set having a programming mode resistor and an APDE mode resistor. A data buffer switches either a programming mode resistor or APDE mode resistor into the circuit when a bitline is selected for either programming or APDE. The values of the resistors are selected to raise the voltage at the source above a selected threshold voltage of the memory cells so that over-erased cells will not provide leakage current to the bitline during either programming or APDE.
Patent TW-546357-B (TW)
Title: Coating composition, its preparation process and use
Inventor: MECHTEL MARKUS
IPC: C09D183/14
Filed: 2000-08-15
Granted: 2003-08-11
Abstract: The invention relates to inorganic coating compositions based on cyclic carbosiloxanes, inorganic polycondensates and alpha,omega-functional linear oligosiloxanes, and also to a process for production thereof and to the use thereof to a non-stick layer so obtained.