baber/WOPTO huggingface dataset:
Patent TW-381281-B (TW)
Title: Field emission element
Inventor: KISHINO TAKAO
IPC: H01J3/02
Filed: 1998-05-06
Granted: 2000-02-01
Abstract: The present invention relates to a field emission element formed by arranging the cathode and gate terminals on the same plane for prevention of increase in processing numbers and complexity of manufacturing processes. The field emission element of the present invention is formed on the cathode along with cathode substrate to expose the gate terminal of terminals of gates and form the penetrating hole on the insulation layer. The gate wiring on the insulating layer of the multi-layer wiring structure is connected to gate terminals on cathode substrate via the penetrated hole. The insulation layer is right below the sealed portion, thus the sealed portion is not contacted with gate and gate terminal and reduce the protection layer of sealed portion; and, also configure the resistance layer below the conical electrode between the gate and gate terminal at the penetration hole.
Patent TW-392141-B (TW)
Title: Keyboard musical instrument having fall-board assembled with case by means of oldham's coupling
Inventor: INOUE SATOSHI
IPC: G10C3/02
Filed: 1998-08-05
Granted: 2000-06-01
Abstract: An upright piano includes a fall-board (12) hinged ot a upper sill (10f) and connected through a pair of flexible coupling (13) to side arms (10b), and each of the flexible couplings has a rotary damper (13b) embedded in the side arm and an Oldham's coupling (13a/13c/13q) connected between the fall-board and the rotary damper so that the Oldham's couplings take up mis-alignment between the rotational axis (AX1) of the fall-board and the rota-tional axes (AX2) of the rotary dampers.
Patent TW-509660-B (TW)
Title: Method for fabricating silicon oxynitride
Inventor: DAWSON-ELLI DAVID FRANCIS
IPC: C23C16/30
Filed: 1998-08-27
Granted: 2002-11-11
Abstract: A method for making silicon oxynitride comprising the providing a vaporous gas stream of a compound selected from the group consisting of silazanes and siloxazanes. An enclosed, heated reaction site is also provided. The vaporous gas stream is delivered to the enclosed, heated reaction site in which the levels of oxygen are strictly controlled to promote the formation of silicon oxynitride particles.
Patent TW-483923-B (TW)
Title: Silicone hydrogel polymers
Inventor: VANDERLAAN DOUGLAS G
IPC: C08F220/28
Filed: 1998-12-09
Granted: 2002-04-21
Abstract: A reaction mixture comprising at least one silicone-containing monomer, at least one hydrophilic monomer, and a diluent comprising the following structure: where R, R' and R"" are independently selected from H, a substituted or unsubstituted, linear, branched or cyclic monovalent alkyl having 1 to 10 carbons, or any two or all three of R, R' and R"" can together bond to form at least one substituted or unsubstituted cyclic structure having 1 to 10 carbons with the proviso that no more than one of R, R' and R"" is H.
Patent TW-400625-B (TW)
Title: The manufacture method of improving the etch uniformity of the complementary metal-oxide semiconductor polycrystal silicon
Inventor: GAU MING-JENG
IPC: H01L21/8238
Filed: 1998-10-19
Granted: 2000-08-01
Abstract: A manufacture method of improving the etch uniformity of the complementary metal-oxide semiconductor polycrystal silicon. Below is the description: after depositing the polycrystal silicon layer, to deposite a silicon nitride layer. When proceeding the definition of the gate structure, only to etch the silicon nitride layer. After removing the photoresist layer, using the silicon nitride layer to be the photomask for the etch of the polycrystal silicon. To integrate the LDD ion-implantation step without increasing the light-exposure layers (times). First, to cover the PMOS region by using the photoresist, then to etch the polycrystal silicon layers to define PMOS. Next, to proceed the LDD ion-implantation of PMOS. This invention proceeds polycrystal silicon etch on NMOS and PMOS (without increasing the exposure times). Hence it could prevent the concentration difference of the phosphous ions in NMOS and PMOS.  This causes the difference of etching rate and inducing the abnormal phenomena of NMOS (PMOS) normal, while PMOS (NMOS) bridging or the overwide of the line width.
Patent TW-382679-B (TW)
Title: Method for tracking of position and direction in virtual reality
Inventor: LUO RUNG-CHIN
IPC: G06K9/62
Filed: 1998-11-09
Granted: 2000-02-21
Abstract: The Perspective Transformation-invariant generalized Hough Transformation (PTIGHT) and Fast Perspective Transformation-invariant generalized Hough Transformation (FPTIGHT) are used to track the position and the direction of a head in virtual reality so that a simpler device for the user than the conventional method for tracking the position and direction of a head by imaging is obtained. The present invention comprises: (1) a PTIGHT algorithm; (2) a FPTIGHT algorithm; (3) realization of a tracking system for position and direction in virtual reality using the PTIGHT algorithm and the FPTIGHT algorithm.
Patent TW-466573-B (TW)
Title: Distributing method of bottleneck resource
Inventor: YANG TAI-YI
IPC: H01L21/00
Filed: 1998-11-06
Granted: 2001-12-01
Abstract: The present invention discloses a method for appropriately distributing the bottleneck resource based on the on-line real-time information. After the on-line real-time information is downloaded from the bottleneck station and the subsequent station, the parameters of the remained processing time of each subsequent station and the product quantity required to be dispatched by the bottleneck resource can be obtained by calculating. Therefore, based on the determined parameters, the number of bottleneck station distributed to each subsequent station can be determined.
Patent TW-399377-B (TW)
Title: Methodology of reducing areas with multiple dominant pilots by installing simulcasting elements or omni-directional base station
Inventor: QI BI
IPC: H04W16/00
Filed: 1999-01-28
Granted: 2000-07-21
Abstract: A method for reducing multiple dominant pilots in a CDMA transmission system comprises linking a transceiver element with a nearby base station for transporting signals between the transceiver element and the nearby base station.  Transmitting from the transceiver element forward link signals of a nearby sector associated with the nearby base station.  An apparatus is also described.
Patent TW-417047-B (TW)
Title: Method for increasing efficiency in a multi-processor system and multi-processor system with increased efficiency
Inventor: FREERKSEN DONALD LEE
IPC: G06F12/08
Filed: 1999-01-08
Granted: 2001-01-01
Abstract: The multi-processor system according to the present invention includes at least two processors, a system bus providing communication between the processors, and a bus arbiter generating system responses to commands on the system bus. One of the processors generates a snoop response to a snooped command based on the system response to a command, associated with the same real address as the snooped command, which issued from the processor. In response to a command requesting invalidation of a cache line, a cache within the processor conditionally casts back the cache line to a transition cache in the processor. Based on the system response to the invalidation command, the transition cache line in the main memory of the system. The processor also converts an exclusive read that reservation has been lost prior to placing the command on the system bus. Furthermore, the transition cache in the processor may shift the memory coherency image state for a non-exclusive command, which is waiting for data to return, if a command associated with the same real address is snooped. In response to a command requesting a cache line, the cache in the processor copies that cache line to the transition cache and updates the state for the cache line. The transition cache holds the cache line until a system response is received.
Patent TW-415114-B (TW)
Title: Fabrication method of high power laser diode|fabrication of laser diode wit ridge stripe structure
Inventor: CHIU CHIEN-CHIA
IPC: H01S5/00
Filed: 1999-02-02
Granted: 2000-12-11
Abstract: The invention relates to the fabrication method of a high power laser diode, in which the conventional fabrication of laser diode can be simplified by means of forming the amorphous GaAs as the current blocking layer of ridge structure in the high power laser diode with ridge structure buried with the amorphous GaAs. However, the fabricated laser diode can still acquire the single transverse mode along with the high power output so that the cost and time in fabrication can be lowered.
Patent TW-460381-B (TW)
Title: Packaging for encapsulating material
Inventor: STIJNMAN PAULUS WILHELMUS ADRI
IPC: B65D85/86
Filed: 1999-04-15
Granted: 2001-10-21
Abstract: The packaging (1) for encapsulating material (9) comprises two films (2, 3) which wrap a volume of encapsulating material (9). Such packagings are used e.g. in transfer molding to encapsulate electronic components. End parts of the first film (2) are sealed together by two closure seams (4, 5). The two films (2, 3) are joined together by film seams (6, 7) which extend along from one closure seam (4, 5) to the other. The films (2, 3) form at least one two-layer film flap (A; B) through which during molding the encapsulating material flows into the runners of a mold. In the film flap(s) (A; B) at least one of the films is provided with one or more incisions (8; 15, 16, 18) located in the vicinity of at least one of the closure seams (4, 5) or, after cutout of a part of the film flaps (A; B), the oblong border (20) of the film flaps (A; B) is shorter than the distance (21) between the two closure seams (4, 5). With the incisions the stresses induced by the closure seams (4, 5) in the film flaps (A; B) and therefore undesired creases and corrugations are eliminated.
Patent TW-434585-B (TW)
Title: Electrical part unit provided with terminal metal fitting for connecting lead wire
Inventor: TSUNEZAWA ICHIRO
IPC: H01C13/00
Filed: 1999-05-17
Granted: 2001-05-16
Abstract: The present invention plans to provide an electric component unit that includes a lead wire connection terminal fitment capable of being simply fixed on a terminal fitment mounting section of a casing and facilitating the connection of a lead wire. Based on this and, for example, figure 1 is used as the reference. A terminal fitment fit section of a terminal fitment mounting section of a casing is formed with a pair of terminal mounting fit grooves 63, 64, in which a fitted section 21 of a lead wire connection terminal fitment 2 is fitted at the terminal mounting fit grooves 63, 64. The lead wire connection terminal fitment 2 is made of a metal sheet of at least 0.7 mm in thickness by machining. A terminal section of the terminal fitment is formed into a width equal to or above a thickness of the metal sheet. At the lead wire connection section 22 of the lead wire connection terminal fitment 2, there is provided a lead wire insertion opening portion 22a that permits a core of a lead wire L to be inserted and a lead wire press-fit groove 22b in which the core of the lead wire L displaced from the lead wire insertion opening is press-fitted.
Patent TW-410405-B (TW)
Title: Method for patterning conductive layer
Inventor: LIAU KUAN-YANG
IPC: H01L21/3213
Filed: 1999-06-04
Granted: 2000-11-01
Abstract: A method for patterning a conductive layer is provided. The method includes providing a substrate with a dielectric layer formed thereon. A conductive layer is formed on the whole substrate. A wide trench is formed in the conductive layer by performing a photolithography and an etching process. Adjusting structures are formed on the sidewalls of the trench. The distance between adjusting structures is equal to the predetermined width of a conductive structure. A covering layer is formed to fill the trench. An anisotropic etching is performed using the covering layer as a self-aligned hard mask to form the conductive structure.
Patent TW-I237571-B (TW)
Title: A membrane or matrix for controlling the permeation rate of drugs
Inventor: JUKARAINEN HARRI
IPC: C08J5/18
Filed: 1999-06-04
Granted: 2005-08-11
Abstract: The invention relates to a membrane or matrix for controlling the permeation rate of a drug, wherein said membrane or matrix comprises a siloxane-based elastomer composition which comprises at least one elastomer and possibly a non-crosslinked polymer. The elastomer composition comprises poly(alkylene oxide) groups, and the poly(alkylene oxide) groups are present in the elastomer or the polymer as alkoxy-terminated grafts of polysiloxane units, or as blocks, the said grafts or blocks being linked to the polysiloxane units by silicon-carbon bonds, or as a mixture of these forms. The invention also relates to methods for the preparation of the elastomer composition to be used in said membrane or matrix.
Patent TW-506989-B (TW)
Title: Process and apparatus for producing aromatic carboxylic acid
Inventor: TOMITAKA TADASHI
IPC: C07C51/265
Filed: 1999-06-05
Granted: 2002-10-21
Abstract: A process and an apparatus for producing an aromatic carboxylic acid preventing, on an emergency shutdown or in similar cases of a system, the recycle of a distillate fraction containing a solvent at lower concentration and lower temperature from a distillation column to an oxidation reaction column, to assure an easy restart of the system and to allow a size reduction of the distillation column. In the process and apparatus, the aromatic carboxylic acid is produced from an alkyl aromatic compound, in an oxidation reactor, in a reaction solvent containing an aliphatic carboxylic acid, by way of liquid phase oxidation. A distillation of an exhaust gas of the reactor is conducted in a first distillation column and a second distillation column, wherein the second distillation column is structured so as to allow a reflux to the first distillation column to be drained out of the system when necessary.
Patent TW-416118-B (TW)
Title: Method of fabricating semiconductor device
Inventor: MUN CHEAR-YEON
IPC: H01L21/762
Filed: 1999-06-07
Granted: 2000-12-21
Abstract: The present invention discloses a method for fabricating a trench isolation structure in a semiconductor device. A first insulating layer and a first anti-oxidation layer are formed on a semiconductor substrate. Then, a predetermined region of the surface of the substrate is exposed. Thereafter, a trench is formed by etching the exposed surface of the substrate. A second insulating layer is formed along an inner surface of the trench. Next, the first anti-oxidation layer is isotropically etched to a predetermined thickness. A second anti-oxidation layer is formed on the resultant structure. A third insulating layer is formed on the second anti-oxidation layer. The third insulating layer and the first and second anti-oxidation layers are planarized. Finally, the first anti-oxidation layer is removed.
Patent TW-538147-B (TW)
Title: Process for preparing defect free silicon crystals which allows for variability in process conditions
Inventor: FALSTER ROBERT J
IPC: C30B15/20
Filed: 1999-11-22
Granted: 2003-06-21
Abstract: A process for growing a single crystal silicon ingot having an axially symmetric region substantially free of agglomerated intrinsic point defects. The ingot is grown generally in accordance with trio Czochralski method; however, the manner by which the ingot is cooled from the temperature of solidification to a temperature which is in excess of about 900 DEG C is controlled to allow for the diffusion of intrinsic point defects; such that agglomerated defects do not form in this axially symmetric region. Accordingly, the ratio v/G0 is allowed to vary axially within this region, due to changes in v or G0, between a minimum and maximum value by at least 5%.
Patent TW-429398-B (TW)
Title: Method for manufacturing a flip chip semiconductor device
Inventor: SAITOH MASARU
IPC: H01L21/304
Filed: 1999-07-06
Granted: 2001-04-11
Abstract: A plurality of pad electrodes are formed on a first surface of an IC wafer, and a solder layer is formed on each of the pad electrodes. The first surface of the IC wafer including solder layers is coated with a flux layer, and solder layers are reflowed to round each of the solder layers, there by forming each solder layer into a solder bump. An adhesive tape is adhered on the flux layer, and a second surface opposite to the first surface of the IC wafer is ground to form a flip chip semiconductor device.
Patent TW-444125-B (TW)
Title: Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit
Inventor: PANICCIA MARIO J
IPC: G01R1/06
Filed: 1999-07-12
Granted: 2001-07-01
Abstract: A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 mu m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction, region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.
Patent TW-546409-B (TW)
Title: Water-based surface treating agent for zinc or zinc-plated steel plate
Inventor: KINOSHITA YASUHIRO
IPC: C23C22/00
Filed: 1999-08-19
Granted: 2003-08-11
Abstract: The present invention provides a surface treating agent for zinc or zinc-plated steel plate having excellent corrosion resistance and solvent resistance by preparing the agent made from (I) a polymer obtained by polymerization of specified unsaturated monomers, (II) silica particles and (III) a specified compound, and controlling proportions of the solid content of the component II and the solid content of the component III to the total solid content of the component I and component II to specified weight ratios. This treating agent consists of a polymer as component I, silica particles as component II and fluorides, fluoride complexes, and oxides containing elements such as Si, Sc, Ti, V, Zr, Mo, W as component III. The polymer as the component I is obtained by polymerization of (a) (meth)acrylate unsaturated monomers, (b) alpha, beta vinyl unsaturated monomers having carboxy groups or hydroxyl group in the molecule, (c) unsaturated monomers having functional groups capable of reacting with carboxyl group or hydroxyl group and (d) copolymerizable unsaturated monomers.
Patent TW-431079-B (TW)
Title: Balanced to unbalanced circuit
Inventor: WESTBERG DAVID
IPC: H01P5/10
Filed: 1999-09-27
Granted: 2001-04-21
Abstract: The present invention relates to a balun circuit (1B) comprising a first sub-circuit (10) and a second sub-circuit (20) which each correspond to, or essentially to, a λ/4-wave guide. The first sub-circuit (10) includes a first conductor (10U), a second conductor (10L) and a dielectric layer disposed between said first and second conductors, said conductors being connected together capacitively and inductively. The second sub-circuit (20) includes a first conductor (20U), a second conductor (20L) and a dielectric layer disposed between said first and second conductors, said conductors being connected together capacitively and inductively. A first side on the first conductor (10U) in the first sub-circuit (10) is connected to an input port (P1). A second side on the first conductor (10U) in the first sub-circuit (10) is connected to a first side on the first conductor (20U) in the second sub-circuit (20) via a connecting conductor (15). A second side on the second conductor (10L) in the first sub-circuit (10) is connected to a first output port (P2). A first side on the second conductor (20L) in the second sub-circuit (20) is connected to a second output port (P3). A first open terminating λ/4-wave guide (30) is connected to a second side on the second conductor (10L) in the first sub-circuit (10), and a second open terminating λ/4-wave guide (40) is connected to a second side of the second conductor (20L) in the second sub-circuit (20).
Patent TW-450871-B (TW)
Title: Method for modification of polishing pattern dependence in chemical mechanical polishing
Inventor: EVANS DAVID RUSSELL
IPC: H01L21/3105
Filed: 1999-10-16
Granted: 2001-08-21
Abstract: A method of CMP includes forming a CMP slurry containing cerium oxide; adding a slurry modifier to the slurry, wherein the slurry modifier polishes low structure areas at a substantially zero rate and polishes high structure areas at a rate approximating a blanket polishing rate; and polishing a structure using the modifier-contained slurry.
Patent TW-425277-B (TW)
Title: Intramedullary nail for forearms
Inventor: FRIGG ROBERT
IPC: A61B17/72
Filed: 1999-11-11
Granted: 2001-03-11
Abstract: Intramedullary nail for opoerative fracture treatment of thin tubular bones of human body, comprising a nail body (1) with a longitudinal axis (3), comprisea a prismatic or cylindrical end part (2) at the upper end (4) with means to couple at instruments, a longitudinal shaft (6) and a nail tip (7) at the lower end (5) to simplify the implantation, wherein at least the shaft (6) has grooves (15; 16) or holesextending parallel to the longitudinal axis (3) to receive locking wires (8), so that the locking wires (8) in the grooves (15; 16) or holes are slidable coaxial to the longitudinal axis (3) and outwardly beyond the nail tip (7) and can be screwed into the bone. The advantages achieved by this inveniton consist mainly in that a controlled and safe intramedullary fracture provision (treatment) of a thin tubular bone ia possible, a flexible implant, which is available to allow the selection of different kinds of entry (retrograde, antegraed) and by backdrawing of the locking wires an over-distraction of the fracture can be corrected.
Patent TW-579393-B (TW)
Title: Thin film forming device and production of tungsten nitride thin film
Inventor: HARADA MASAMICHI
IPC: C23C16/34
Filed: 1999-12-30
Granted: 2004-03-11
Abstract: A technique for forming a tungsten nitride film having a high growth speed without causing any dusting. The film forming apparatus 2 according to the present invention has a constitution where an adhesion preventive container 8 is placed in a reactor 11 and an object on which a film is to be formed 20 is located in the adhesion preventive container 8. In a first gas inlet equipment, a first feedstock gas is jetted from a shower nozzle 12. In a second gas inlet equipment, a second feedstock gas is jetted around the object on which a film is to be formed 20 between the shower nozzle 12 and the material 20. Owing to this constitution, the first feedstock gas and the second feedstock gas attain the surface of the object on which a film is to be formed without being mixed together, which enables the efficient performance of the reaction. Since the adhesion preventive container is heated to 150 to 250 DEG C, neither WF6.4NH3 nor WXN is formed and thus no dusting is caused.
Patent TW-517463-B (TW)
Title: Efficient coding of side information in a lossless encoder
Inventor: BRUEKERS ALPHONS ANTONIUS MARI
IPC: G10L19/04
Filed: 2000-02-14
Granted: 2003-01-11
Abstract: For ""super audio CD"" (SACD) the DSD signals are losslessly coded, using framing, prediction and entropy coding. Besides the efficiently encoded signals, a large number of parameters, i.e. the side-information, has to be stored on the SACD too. The smaller the storage capacity that is required for the side-information, the better the overall coding gain is. Therefore coding techniques are applied to the side-information too so as to compress the amount of data of the side information.