baber/WOPTO huggingface dataset:
Patent TW-526240-B (TW)
Title: Alkoxy-crosslinking RTV1 silicone rubber mixtures
Inventor: SCHEIM UWE
IPC: C08L83/06
Filed: 1998-05-29
Granted: 2003-04-01
Abstract: The invention relates to alkoxy-crosslinking RTV1 silicone rubber mixtures based on hydroxy-terminated polydiorganosiloxanes containing a trialkoxysilane with a substituted amidoalkyl radical. An alkoxy-crosslinking RTV1 silicone rubber mixture comprising (a) at least one hydroxy-terminated poly-diorganosiloxane of the general formula (I): HO(SiR12O)nH, where R1, independently of one another, are unsubstituted and/or substituted alkyl, alkenyl or aryl radicals and n is from 20 to 2000, (b) at least one alkoxysilane and/or its partial hydrolysate of the general formula (II), where R2, independently of one another, are unsubstituted and/or substituted alkyl and/or silyl radicals, R3, independently of one another, are unsubstituted and/or substituted, saturated and/or unsaturated alkyl and/or aryl radicals and/or hydrogen, R4 are unsubstituted or substituted, saturated or unsaturated alkyl, aryl or acyl radicals or hydrogen, R5 are unsubstituted or substituted, saturated or unsaturated alkyl or aryl radicals or hydrogen and X is oxygen or sulfur, where the radicals R4 and R5 may form alicyclic or heterocyclic rings, and m is either 1 or 2, and also (c) at least one organosilane and/or its partial hydrolysate of the general formula (III): R1xSi(OR2)4-x, where R1 and R2 are as defined above and x is either 0 or 1, whererin: in the general formula (1) R1 is methyl and n is from 100 to 1600, the alkoxysilanes of the general formula (II) are compounds in which no silyl groups are bonded as radical R2, or partial hydrolysates of these, N-1-(triethoxysilyl)ethylpyrrolidone-(2) or N-2-(triethoxysilyl)ethylpyrrolidone-(2) or mixtures of these, N-1-(triethoxysilyl)-ethyl-N-mehtylacetamide or n-2-(triethoxysilyl)-ethyl-N-methylacetamide or mixtures of these, or the reaction products of alkoxysilanes of the general formula (II) which contain no silyl group, or of partical hydrolysates of these, with organosilanes or partial hydrolysates of these of the general formula (III).
Patent TW-509590-B (TW)
Title: Ion exchange resins their preparation and uses
Inventor: JONES MICHAEL DAVID
IPC: C07C51/47
Filed: 1998-06-02
Granted: 2002-11-11
Abstract: An ion-exchange resin stabilized against shrinkage, the resin being loaded with at least one amphiphilic ion in the absence of sodium cations. Also a process for removing iodide compounds from a liquid carboxylic acid and/or carboxylic acid anhydride obtained from the Group VIII noble metal catalysed, alkyl iodide co-catalysed carbonylation acid and/or carboxylic acid anhydride with the ion-exchange resin stabilised against shrinkage as aforesaid, the ion-exchange resin being loaded with one or more of the metals silver, palladium or mercury.
Patent TW-392289-B (TW)
Title: Improved method of forming the shallow trench isolation in IC
Inventor: CHENG MENG-JAU
IPC: H01L21/76
Filed: 1998-06-04
Granted: 2000-06-01
Abstract: The present invention is used an improved novel method to produce the planarized trench isolation, so as to inhibit the etching from the edge of the trench isolation without sacrificing the minimum width between the trench isolations. The method is to first make the isolated sidewall layer, and then etch the isolated groove in the semiconductor substrate.  The aforementioned isolated sidewall layer can protect the isolated layer in the trench, after the isolated layer is filled in the groove and the isolated layer is planarized, thereby avoiding the formation of divots surface in the edge of the trench.  The minimum width between the trench isolation can be kept and the space between the trench isolation can be decreased because the sidewall isolated layer is formed before the formation of the grooves in the semiconductor substrate.
Patent TW-417286-B (TW)
Title: Semiconductor device and method of manufacturing the same
Inventor: KURODA HIDEAKI
IPC: H01L21/3205
Filed: 1998-06-19
Granted: 2001-01-01
Abstract: A semiconductor device comprising a first connecting plug for bit contact and a second connecting plug for storage node contact buried in a first interlayer insulating layer covering the transistor and projecting from the transistor. The bit line is buried in a second inter-layer insulating layer and connected to the first connecting plug. The electrode of the storage node is partially buried in the second inter-layer insulating layer, connected on the second connecting plug, and projected above the second inter-layer insulating layer.
Patent TW-415152-B (TW)
Title: Data packet radio service with enhanced mobility management
Inventor: CABERO COMBARROS JOSE JAVIER
IPC: H04L12/56
Filed: 1998-06-19
Granted: 2000-12-11
Abstract: The address of a latest Serving GPRS support Node (SGSN) is provided to a Gateway GPRS Support Node (GGSN) by a special Update SGSN Address Request message which is sent from the SGSN to the GGSN. For a subscriber whose subscription permits, the address of the latest SGSN node is sent in the Update SGSN Address Request message for a qualified packet data protocol (PDP) context. A qualified PDP context (1) has a static PDP address; and (2) is not activated. The Update SGSN Address Request message can be sent from the SGSN to the GGSN in either a GPRS Attach scenario or an Inter-SGSN Routing Area Update Scenario. In response to the Update SGSN Address Request message, the GGSN sends an Update SGSN Address Response message which advises whether the updating of the address for the SGSN at the GGSN has been successful.
Patent TW-397697-B (TW)
Title: Method of recycling disk recording medium and apparatus for recovering metal reflective film
Inventor: TOMITA HIDEMI
IPC: G11B7/26
Filed: 1998-07-10
Granted: 2000-07-11
Abstract: A method of recycling a disk recording medium includes the step of retaining the disk recording medium in a liquid medium, the disk recording medium having a layered structure including a substrate, a dry layer, a reflective film, and a protective layer; radiating ultrasonic waves onto the disk recording medium such that the substrate and the reflective film are separated from each other; and bringing a solution into contact with the substrate separated from the reflective film such that the dye layer is separated from the substrate in order to recover the substrate, the solution dissolving the dye layer.
Patent TW-381355-B (TW)
Title: Battery collector having special holes and the manufacturing method thereof
Inventor: ASHIZAWA KOICHI
IPC: H01M4/13
Filed: 1998-08-10
Granted: 2000-02-01
Abstract: The present invention relates to a kind of battery collector having special-shape holes and the manufacturing method thereof; more specifically, the invention provides a kind of battery collector by coating active material on the inner surface of metal foil preventing from falling off. The method is to configure a plurality of penetration holes on the metal foil and make the circumference of penetration hole as a complex special shapes and by deeply coating active material or adhesive to prevent the falling off of active material on metal foils formed by coating on the inner surface of collector. The area of penetration hole S is 0.05~50 mm<2>. The circumference of penetration hole is set to M. In an assumed circumference N with an area of S, the M/N ratio is between 1.30~100. Such collector with a plurality of penetration holes can be obtained by passing the metal foil between a rugged roller with multiple bulges and a smooth roller under constant line pressure; furthermore, if the circumference of penetration holes is formed as recession, then by passing a pair of metal smooth rollers so as to remove the generated recession around the penetration holes.
Patent TW-429463-B (TW)
Title: Method for cleaning wafers
Inventor: YANG YI-CHANG
IPC: H01L21/304
Filed: 1998-08-25
Granted: 2001-04-11
Abstract: A method for cleaning wafers first places the wafer to be cleaned in a cleaning tank. The wafer is cleaned by utilizing cleaning solution and megasonic to remove the contaminants and particles remained on the surface of the wafer after etching. The present invention is characterized that, at the end of the cleaning process, the operation of the megasonic is stopped so as to improve the ability for removing the contaminants and particles remained on the surface of the wafer and decrease the number of particles in the cleaning tank, thereby avoiding contamination to the wafer in the tank.
Patent TW-383485-B (TW)
Title: Data latch circuit for multi-level non-volatile semiconductor memory device
Inventor: CHOI BYUNG-SUN
IPC: G11C11/56
Filed: 1998-10-13
Granted: 2000-03-01
Abstract: A kind of multi-level non-volatile semiconductor memory device comprises : a multi-level memory cell, a word line coupled with multi-level memory cell, a bit line coupled with multi-level memory cell, a sensing amplifier used to sense the bit line voltage when the word line is driven by different word line voltage, and the data latch circuit used to latch the output of sensing amplifier. The data latch circuit comprises : the first and second latch with first and second terminals respectively, and the first to the third switch circuit, the first switch circuit coupled with the second terminal of the first latch and a grounding voltage, and based on the first control signal and a voltage switch of input terminal for receiving the output from sensing amplifier; the second switch circuit is coupled with the second terminal of the second latch and reference voltage, and based on a second control signal and the voltage switch of input terminal; the third switch circuit is coupled with the first terminal of the first latch and reference voltage and based on the third control signal and the voltage switch of input terminal.
Patent TW-364030-B (TW)
Title: Diaphragm-type flush valve, and valve member assembly
Inventor: WILSON JOHN R
IPC: E03D3/06
Filed: 1998-10-29
Granted: 1999-07-11
Abstract: A diaphragm type of flush valve for use with toilet devices such us urinals and water closets includes a body having an inlet and an outlet. There is a valve seat between the inlet and outlet and a valve member is movable to a closing position on the valve seat to stop flow between the inlet and outlet. The valve member includes a diaphragm assembly peripherally attached to the body. There is a pressure chamber above the diaphragm assembly for holding the valve member on the valve seat. A filter and bypass orifice in the diaphragm assembly connects the inlet and the pressure chamber. The filter includes a circumferential filter ring attached to the underside of the diaphragm and positioned adjacent its periphery. The ring has a plurality of circumferentially spaced filter grooves in communication with the inlet. There is a peripheral channel connecting the grooves and there is an orifice in communication with the peripheral channel and the plurality of grooves to provide a water flow conduit between the inlet and the pressure chamber.
Patent TW-405188-B (TW)
Title: UHV-compatible in-situ pre-metallization clean and metallization of semiconductor wafers
Inventor: LICATA THOMAS J
IPC: H01L21/302
Filed: 1998-11-17
Granted: 2000-09-11
Abstract: A method is provided of cleaning device surfaces for the metallization by treating the surfaces in a chamber equipped for ionized physical vapor deposition (IPVD) or other plasma-based metal deposition process. The surfaces such as contacts (6) on a substrate (3) are plasma etched, preferably in a chamber (12) in which the next metal layer (8) is to be deposited. Preferably, the surfaces are plasma etched with a plasma containing ions of the metal to be deposited, with the etching preferably followed by depositing a film (8) of the metal, preferably by IPVD in the chamber (12). The metal may, for example, be titanium sputtered from target (16), and may be followed by depositing a titanium nitride layer. The process steps may be used to passivate the surfaces for transfer of the substrate containing the device surfaces through an oxygen or water vapor containing atmosphere or through another atmosphere containing potential contaminants such as through transfer chamber of to which are connected CVD or other chemical processing modules. In the preferred embodiment, etching is achieved by maintaining a high ion fraction and high bombardment energy, for example, by applying a high negative bias to substrate (3), operating the plasma in a net etching mode, then, by lowering the bombardment energy, for example by lowering the bias voltage, or by lowering the ion fraction, such as by increasing sputtering power, decreasing plasma power or chamber pressure, so that a net deposition of the metal by IPVD is brought about.
Patent TW-496834-B (TW)
Title: Remotely controlled, adjustable security alarm triggering system
Inventor: LAI JENG-YANG
IPC: B60R25/10
Filed: 1999-01-20
Granted: 2002-08-01
Abstract: This invention is related to a vehicle security system and method, wherein a common linearly responded sensor is used to provide timely signals. The response of the system controller may be remotely adjusted for adjusting the system sensitivity. The user may use a remote transmitter to adjust the wavelength threshold of the attack pulses, so as to instruct the security system controller to adjust the sensitivity. Based on the severity of attack, a common sensor may be used to provide timely pulse signals in proportion to the severity of attack. The alarm system is trigger by the wavelength of the pulses output by the sensor. This system may be provided with two triggering levels, one being the warning level, the other being a full alarm level. The user may use a transmitter to remotely adjust the control system, to adjust the warming level and the full alarm level. This invention also provides a method for system to validate the user by means of a known or a novel remote transmitter. The user may select a specialized software switch and enter the learning mode. Such a software switch can activate the adjustment procedures for the full alarm level. Once entering the learning mode, the user can simulate various attack level in real life to adjust the triggering level until the user is satisfied with the triggering levels of the warning level and the full alarm level.
Patent TW-410357-B (TW)
Title: Plasma display panel and method of manufacture of same
Inventor: TADAKI SHINJI
IPC: H01J17/49
Filed: 1999-02-08
Granted: 2000-11-01
Abstract: Local losses of material of transparent electrodes, in a plasma display panel including transparent electrodes, bus electrodes and, a dielectric layer covering these electrodes, are prevented by using a plasma display panel according to the present invention. The plasma display panel is formed on at least one substrate of a pair of substrates provided opposite each other via a discharge space. An element, which is a main element of the bus electrode composition, is included in the composition of the dielectric layer. Since the main element of the bus electrode is included in the dielectric layer, local losses of the transparent electrode can be prevented even through the high temperature baking process of the dielectric layer. A preferred choice as the main element of the bus electrode composition is copper, but other elements are alsoo suitable and will perform acceptably.
Patent TW-509641-B (TW)
Title: Automotive electrical appliances supporting device
Inventor: HSU MIN-CHEN
IPC: H01R24/58
Filed: 1999-04-09
Granted: 2002-11-11
Abstract: This invention provides a flexible electrical appliances supporting device for support electrical appliances inside an automobile. This device includes a power source plug, a flexible hollow steel pipe, plural flexible twisted cables, and a wire. The front end of the power source plug is inserted and fixed to the power source plug inside the automobile. The steel pipe has two ends being each fixed to the rear end of the power source plug and to the electrical appliance. The plural twisted cables are provided to the side of the steel pipe for enhancing the supporting force provided by the steel pipe. The wire is installed in the steel pipe for conducting the electricity of the power source plug to the appliance. When one user bends or rotates the electrical appliance supporting device, the steel pipe and the twisted cables are bent or rotated with the electrical appliance and fix the electrical appliance to fix to a location after the displacement.
Patent TW-396260-B (TW)
Title: Steam generator system operation
Inventor: ANDERSON DAVID KENNETH
IPC: F23J15/08
Filed: 1999-07-03
Granted: 2000-07-01
Abstract: The flue gas temperature coming form an air preheater to a particulate collection device such as an electrostatic precipitation or fabric filter is reduced to improve the operation of the particulate collection device. This may be done by reducing the exit flue gas temperature form the air preheater or reducing the temperature after exiting. In one embodiment, air in excess of that needed for combustion is passed through the air preheated with the heated excess air either being dumped or used for a variety of purposes in the plant. A particular embodiment involves segmenting the air outlet side of a rotary regenerative air preheater and withdrawing the excess air from the segment where the dust loading is the lowest. Further, additional cooling of the flue gas can be provided by reducing the quantity of primary air that typically bypasses the air pre heater and then providing other ways to control the primary air temperature to the pulverizers. The flue gas temperature may also be cooled after the air preheater by heat exchange or spray cooling with water.
Patent TW-I222466-B (TW)
Title: Novel method to form a poly connector
Inventor: YANG CHING-NAN
IPC: C23C16/00
Filed: 1999-04-30
Granted: 2004-10-21
Abstract: The present invention includes forming a polysilicon layer on the isolation layer, followed by etching the polysilicon layer by using an etchant that is only attacks the silicon material but stop on the isolation. Subsequently, a metal layer is formed on the patterning feature. A refractory or noble metal layer, such as Ti, Pt, Co, W, Ni, Pd, Cr etc, is formed on the isolation layer and the polysilicon. Successively, a rapid thermal process is employed at 350 to 700 degrees centigrade in N2 ambient to react the metal with the polysilicon, thereby forming silicide on the defined polysilicon. The non-reactive metal on the dielectric layer is next removed.
Patent TW-520473-B (TW)
Title: Media data striping method for effectively using heterogeneous hard disk
Inventor: WANG HAU-LI
IPC: G11B25/00
Filed: 1999-05-20
Granted: 2003-02-11
Abstract: A media data striping method for providing optimized bandwidth of the hard disk in the heterogeneous hard disk, which includes the following steps: (1) expressing the capacity and bandwidth of the hard disk, and the data amount and popularity of the media data in two dimensional vectors, and linked as two folding lines; (2) checking if the folding line of hard disk and the folding line of media data are crossed to determine if there exists an optimized condition of bandwidth usage of the hard disk; (3) with the existed optimized condition, re-building the folding line of hard disk using the similarity algorithm to calculate the dividing ratio of each media data on each hard disk under the optimized striping condition.
Patent TW-436685-B (TW)
Title: Computer system for accessing initialization dada and its method
Inventor: YEH BI-YUN
IPC: G06F12/00
Filed: 1999-06-14
Granted: 2001-05-28
Abstract: A computer system for accessing initialization dada and its method are provided, which utilize the existed memory in the computer for accessing initialization data. When the master power is turned on, a south bridge is waked up and the south bridge issues an signal to wake up the north bridge. After the north bridge is on, an transaction signal is issued for requesting the south bridge to read the initialization data pre-stored in the memory. Then, the north bridge issues a signal to wake up the central processor, and to transmit the data read out by the south bridge to the central processor, whereby the central processor is able to set its parameters for performing system initialization. The existed memory space of the computer is utilized to store the initialization data. Therefore, no additional memory is required, and thus the manufacturing cost of the system can be reduced.
Patent TW-429378-B (TW)
Title: An interleaved sense amplifier with a single-sided precharge device
Inventor: VOGELSANG THOMAS
IPC: G11C7/12
Filed: 1999-06-25
Granted: 2001-04-11
Abstract: An interleaved sense amplifier with a single sided precharge device which provides simplification of the conventional sense amplifier circuitry, as well as a reduction in the area occupied by the sense amplifier circuitry, thereby resulting in chip size reduction. A precharge device is placed on only one side of the sense amplifier, which is used to charge both sets of bit lines pairs that are coupled to the sense amplifier to a common voltage during an equalization/precharge operation. In addition, the resistance of the transistors comprising the precharge device is increased such that the precharge transistors can be further utilized for limiting the flow of current between the bit line pair and precharge net, which obviates the need for the additional leakage limiter devices in the conventional sense amplifier arrangement. Thus, a compact and simplified sense amplifier architecture is realized.
Patent TW-404988-B (TW)
Title: Fabrication of nickel film on photoresist by aerosol deposition of electroless nickel
Inventor: SHU WEN-YUNG
IPC: C23C18/08
Filed: 1999-07-08
Granted: 2000-09-11
Abstract: The present invention discloses a new process and composition of electroless nickel plating solutions on photoresist by spraying electrolytes directing toward the surface of photoresist at room temperature. This new process and composition provide a simple and inexpensive process of providing a smooth, uniform coating of nickel. It solves the problems of many kinds and in particular large dimensions of the electrolyte tanks needed in a regular process of electroless plating. Furthermore, this invention also provides a new method to coating a conductive layer.
Patent TW-498280-B (TW)
Title: Execution method for multi-path applications program
Inventor: GUNG SHAU-TZU
IPC: G06F9/40
Filed: 1999-07-21
Granted: 2002-08-11
Abstract: The present invention relates to an execution method for multi-path applications program. Firstly, all the queries and the related operations in an applications program are collected to form a query list. A decision tree for the applications program is constructed based on the query list to show all the execution paths that may possibly be selected. Then, in accordance with the user's requirements, the best decision path is selected. After the emulation of the decision path, the program processes are drawn up and all the data required for running the applications program in accordance with the decision path are integrated into a configuration file. Finally, based on the specification of the configuration file, the required applications program is run.