Patent SG-11201900351X-A (SG)
Title: Drying high aspect ratio features
Inventor: BERGMAN ERIC J
IPC: H01L21/324
Filed: 2017-07-14
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111101111 0 DOI HIM 011101 0 0111111 viii 0111101110111111101H111111H1 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/013896 Al 18 January 2018 (18.01.2018) WI P0 I P C T _ (51) (21) (22) (25) Filing Language: (26) (30) (71) (72) International Patent Classification: Montana 59901 (US). PLAVIDAL, Richard W.; 147 W. H01L 21/02 (2006.01) HO1L 21/324 (2006.01) Monture Ridge, Kalispell, Montana 59901 (US). International Application Number: (74) Agent: MCCORMICK, Daniel K. et al.; Mailstop: IP PCT/US2017/042071 Docketing - 22, 1100 Peachtree St., Suite 2800, Atlanta, International Filing Date: Georgia 30309 (US). 14 July 2017 (14.07.2017) (81) Designated States (unless otherwise indicated, for every English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, Publication Language: English CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, Priority Data: DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, 62/362,891 15 July 2016 (15.07.2016) US HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, 62/424,264 18 November 2016 (18.11.2016) US MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, Applicant: APPLIED MATERIALS, INC. [US/US]; OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, 3050 Bowers Ave., Santa Clara, California 95054 (US). SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Inventors: BERGMAN, Eric J.; 942 Birch Grove Rd., Kalispell, Montana 59901 (US). KLOCKE, John L.; 143 (84) Designated States (unless otherwise indicated, for every West Swift Creek Way, Kalispell, Montana 59901 (US). kind of regional protection available): ARIPO (BW, GH, MCHUGH, Paul; 127 Sherry Lane, Kalispell, Montana GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, 59901 (US). CRANE, Stuart; 15 Velva Drive, Kalispell, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, = = Title: DRYING : Methods drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the a temperature above the chamber has been reached. The methods may further include venting the chamber, where the venting of the drying agent from the semiconductor substrate. (54) HIGH ASPECT RATIO FEATURES substrate, where semiconductor substrate of the drying agent vaporizes the liquid — = = 800 700 600 .., \" 500 .-- tx. 41) ''... 400 = in 2.! 300 200 100 0 of drying a semiconductor substrate may include applying a drying agent to a semiconductor an atmospheric 4..t isa i I+) Cl i 4 , 6 ct. r 0 ...9: i i 1 ' \ , 1 / S Z • tmospheric Press. — = = = _ = _ = = = - = = 25 75 125 175 225 275 325 Evaporation Temperature (C) FIG. 5 pressure boiling point of the drying agent until a vapor-liquid equilibrium _ 1-1 CT cc M (57) Il the 0 ---- to GC within 1-1 © phase N C [Continued on next page] WO 2018/013896 Al MIDEDIMOHNIIMEIHRIRMIDEREMEMOVON EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, SK, SM, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))