Patent SG-11201403616W-A (SG)
Title: Method for manufacturing bonded soi wafer
Inventor: KOBAYASHI NORIHIRO
IPC: H01L27/12
Filed: 2012-12-26
Abstract: (i2) mwu ft iz s-5 iv x m £ titz s issaj n d9) mm IHMMi (43) m&'&m a 2013^8/3 1 0(01.08.2013) WIPOIPCT (10) WO 2013/111242 A1 (51) H01L 21/02 (2006.01) (21) (22) g&ttHQ: (25) (26) 4>§fl(£> s In: H01L 27/12 (2006.01) PCT/JP2012/008300 2012 ^ 12 M 26 0(26.12.2012) (30) fiBfefix — $: 2012-012256 2012 ^ 1 M 24 0(24.01.2012) JP (71) ttS H A: •(! Si ¥ # fa tt (SHIN-ETSU HAN- DOT AI CO., LTD.) [JP/JP]; T 1000004 T g 6 # 2 Tokyo (JP). (72) % BJ # : /h # ® <JA (KOBAYASHI, Norihiro); T 3790196 51^|5 2 Tl 1 3 # 1 fiiaJIigfa Gunma(JP). ES ^(ISHIZUKA, Toru); T3790196 rfT{l^[5 2 T g 1 3S1 BISPX ±§ Gunma (JP). P5J M ;i§ B] (AGA, Hiroji); T 3790196 51^|5 2 Tg 1 1 3 # fil$|5I±gfi Gunma (JP). (74) ftSA: iT'g ^ ^ (YOSHIMIYA, Mikio); T 1100005 Tg 6# 1 1-^-fg —F Tokyo (JP). (8i) (^ro&i^PBy, IS nj f b): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) *!£H (asrofci^isy > ±T(Dmm(Dfcm% II nlfb): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), 3. — =j V 7 (AM, AZ, BY, KG, KZ, RU, TJ, TM), 3 — • V / ^ (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). = (54) Title: BONDED WAFER SOI MANUFACTURING METHOD = (54)^BJC0^^ : O I ^ x —/ CJ •t CJ i-H o CJ = (A) i (B) 5 (C) g (D) ^ (E) (A) PREPARATION OF PEELED SOI WAFER (B) RTO TREATMENT (C) REMOVAL OF OXIDE FILM (D) THERMAL PLANARIZATION TREATMENT (E) SACRIFICIAL OXIDATION TREATMENT (57) Abstract: The present invention is a bonded SOI wafer manufacturing method characterized in that an RTO treat­ ment is applied to a peeled bonded SOI wafer which is ob­ tained by means of an ion injection peeing method, an oxide film formed on an SOI layer surface through the RTO treat­ ment is removed, then the SOI layer surface is planarized by applying thermal planarization a treatment that causes silicon atoms in the SOI layer surface migrate, and to a sacrificial ox­ idation treatment is subsequently applied in order to adjust the film thickness of the SOI layer. Provided as a result is a bonded SOI wafer manufacturing method that enables a high- quality SOI wafer, for which surface roughness of the SOI layer surface sufficiently is reduced, and deep pits on the SOI layer surface are reduced, to be efficiently manufactured. (57)^: U % bftfciJitf&CDlfiy-a'fr-fcbS O I ^i— MlCfcfL RTOM£fTl\ I^RTO^IIICcfcoTluIBS O I sir IBS O I Ji^SCDv'J =i u—->a >££i:£^&¥±IibtMfiiI£fToTflufBSO I Jia®£¥±HbU T flu IBs o i ztuc^y, so i Jia®a>a®ffi££+#ic'(£ IL, fro, SO I hjbM£3S£ titzm° W(Ds a o i Ji^-r&so i ^i-/\£ $$«fc<Sii-f6-<tjb<-e#6!£y^;b-fcj-so i WO 2013/111242 AlllllllH - (^^21^(3))