baber/WOPTO huggingface dataset:
Patent TW-201826012-A (TW)
Title: Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device
Inventor: HASHIMOTO MASAHIRO
IPC: G03F1/32
Filed: 2017-11-21
Abstract: To provide a mask blank comprising a thin film for forming a transfer pattern on a transparent substrate, wherein the mask blank has a sufficiently rapid correction rate in an EB defect correction and a sufficiently high correction rate ratio of the thin film with respect to the transparent substrate in the EB defect correction even if the thin film is made of a material containing silicon and nitrogen; a method for manufacturing a transfer mask using this mask blank; and a method for manufacturing a semiconductor device using this transfer mask. A mask blank comprising a thin film for forming a transfer pattern on a transparent substrate, wherein the thin film is made of a material containing silicon and nitrogen, and wherein when a plurality of measuring points are set in a thickness direction within an internal region of the thin film which is a region excluding a region of the thin film adjacent to an interface between the thin film and the transparent substrate and a surface layer region of the thin film opposite the transparent substrate, so as to perform X-ray photoelectron spectrometry to obtain respective maximum peaks PSi_fi of photoelectron intensity for Si2p narrow spectra at the plurality of measuring points in the internal region and to obtain an average value PSi_fi_av of the respective received maximum peaks PSi_fi; and a plurality of measuring points are set in the thickness direction within the transparent substrate, so as to perform the X-ray photoelectron spectrometry to obtain respective maximum peaks PSi_sb of the photoelectron intensity for the Si2p narrow spectra at the plurality of measuring points in the transparent substrate and to obtain an average value PSi_sb_av of the respective received maximum peaks PSi_sb, a numerical value calculated by dividing the average value PSi_fi_av for the thin film by the average value PSi_sb_av for the transparent substrate (PSi_fi_av)/(PSi_sb_av) is 1.08 or more. The mask blank of the present invention can increase a correction rate in the EB defect correction of the thin film, and also increase a correction rate ratio of the thin film with respect to the transparent substrate in the EB defect correction. According to the method for manufacturing a transfer mask of the present invention, even if the EB defect correction is performed on a black defect portion in a thin film pattern in course of the manufacture of the transfer mask, the excessive digging on a surface of the transparent substrate near the black defect can be suppressed. Therefore, a transfer mask manufactured by the method for manufacturing a transfer mask according to the present invention is a transfer mask which has high transfer accuracy.
Patent TW-201833535-A (TW)
Title: System, method and non-transitory computer readable medium for tuning sensitivities of, and determining a process window for, a modulated wafer
Inventor: ORAM DAVID CRAIG
IPC: G01N21/95
Filed: 2017-11-21
Abstract: A system, method, and non-transitory computer readable medium are provided for tuning sensitivities of, and determining a process window for, a modulated wafer. The sensitivities for dies of the modulated wafer are tuned dynamically based on a single set of parameters. Further, the process window is determined for the modulated wafer from prior determined parameter-specific nominal process windows.
Patent TW-201841470-A (TW)
Title: Semiconductor device and power converter
Inventor: OJIMA YUSUKE
IPC: H03K17/16
Filed: 2017-12-08
Abstract: To provide a semiconductor device capable of preventing a surge voltage at the time of turn-off without complicating a gate drive circuit and without increasing switching delay. A semiconductor device has a configuration in which a plurality of transistors are equivalently coupled in parallel by including a plurality of control electrodes for controlling a current flowing between a first main electrode and a second main electrode. A resistance value of a transmission path of a control signal from a common control terminal varies with respect to each of the control electrodes.
Patent TW-201839006-A (TW)
Title: Specific affinity chromatography process
Inventor: WONG BING LOU
IPC: B01D15/38
Filed: 2017-12-18
Abstract: The present invention provides a specific affinity chromatography process for purifying Chondroitinase ABC (ChABC). The present method includes using a heparin-immobilized affinity chromatography column, and through chromatography method obtaining a purified ChABC from a matrix containing said ChABC. The present method is capable of obtaining ChABC in high purity with the advantages of simplicity in preparation and high yield.
Patent TW-201916054-A (TW)
Title: Semiconductor storage device
Inventor: BUSHNAQ SANAD
IPC: G11C16/26
Filed: 2017-12-29
Abstract: A semiconductor storage device includes a word line and a wiring, a first transistor controlled to connect the word line to the wiring, a first booster circuit configured to boost an output voltage thereof to a first voltage, a second transistor controlled to connect the first booster circuit to the wiring, and a control circuit configured to control the first booster circuit, and the first and second transistors during a read operation. During the read operation, the control circuit controls the first booster circuit to start boosting its output voltage to the first voltage while controlling the second transistor to connect the output of the first booster circuit to the wiring so that a voltage of the wiring rises together with the output voltage. After the output voltage has reached the first voltage, the control circuit controls the first transistor to connect the word line to the wiring.
Patent TW-201830380-A (TW)
Title: Audio parallax for virtual reality, augmented reality, and mixed reality
Inventor: KIM MOO-YOUNG
IPC: G10L21/0272
Filed: 2018-01-12
Abstract: An example audio decoding device includes processing circuitry and a memory device coupled to the processing circuitry. The processing circuitry is configured to receive, in a bitstream, encoded representations of audio objects of a three-dimensional (3D) soundfield, to receive metadata associated with the bitstream, to obtain, from the received metadata, one or more transmission factors associated with one or more of the audio objects, and to apply the transmission factors to the one or more audio objects to obtain parallax-adjusted audio objects of the 3D soundfield. The memory device is configured to store at least a portion of the received bitstream, the received metadata, or the parallax-adjusted audio objects of the 3D soundfield.
Patent TW-201840969-A (TW)
Title: Defect displaying method
Inventor: FANG WEI
IPC: H01L21/66
Filed: 2018-01-18
Abstract: A defect displaying method is provided in the disclosure. The method comprises acquiring defect group information from an image of a wafer, wherein the defect group information includes a set of correlations between a plurality of defects identified from the image and one or more corresponding assigned defect types and displaying at least some of the plurality of defects according to their corresponding assigned defect types.
Patent TW-201833586-A (TW)
Title: Neutron ray detecting system, and method of setting neutron ray detecting system
Inventor: AKABORI KIYOTAKA
IPC: G01T3/00
Filed: 2018-02-12
Abstract: Provided are a neutron ray detecting system and a method of setting a neutron ray detecting system that can set a determination threshold value to a suitable value. By acquiring the neutron ray wave height distribution of the neutron rays and the gamma ray wave height distribution of only the gamma rays included in the radiant rays, how much gamma rays are detected as noise can be ascertained in a case where a certain determination threshold value Q th is set. That is, a relationship between the determination threshold value Q th and detection accuracy can be ascertained. Additionally, since the neutron ray wave height distribution and the gamma ray wave height distribution are acquired on the basis of two measurements in a case where a filter (51) that cuts the neutron rays N is used and in a case where the filter (51) is not used, the relationship between the determination threshold value Q th and the detection accuracy can be accurately ascertained. Therefore, a determination threshold value adjusting unit (43) can adjust a suitable determination threshold value Q th in conformity with demanded detection accuracy on the basis of the neutron ray wave height distribution and the gamma ray wave height distribution.
Patent TW-201837117-A (TW)
Title: Polyethylene terephthalate containers with improved performance
Inventor: BAYER UWE
IPC: C08K5/42
Filed: 2018-02-23
Abstract: Compositions of compatibilized blends of polyamides in polyesters, methods and resins for forming such compositions, and containers made from such compositions which exhibit higher burst pressure, crystallization at higher temperatures during production and reduced haze as compared to than containers made from previous blends are disclosed.
Patent TW-201937677-A (TW)
Title: Electronic package and method for fabricating the same
Inventor: CHEN HAN-HUNG
IPC: H01L23/58
Filed: 2018-03-01
Abstract: An electronic package and a method for fabricating the same are provided. A resist layer and a support body are formed on a first substrate having a first antenna installation area. A second substrate having a second antenna installation area is compressed on the resist layer and the support body. The resist layer is then removed. The support body keeps a distance between the first substrate and the second substrate constant, to ensure that the antenna transmission between the first antenna installation area and the second antenna installation area can function normally.
Patent TW-201834839-A (TW)
Title: Polarizing film, polarizing plate, and methods for production thereof
Inventor: OZONO TATSUYA
IPC: G02B5/30
Filed: 2018-03-07
Abstract: Provided is a polarizing film that is formed of a PVA film which contains an iodine-based dichroic pigment and which is crosslinked by a boron compound, wherein the polarizing film has a polarization degree of 99.5% or greater, a single b value of 3.0 or less, and satisfies formula (1) and formula (2). Such a polarizing film has excellent polarization performance and hue, and has a small contraction rate and excellent dimensional stability. Formulae: (1): A ≤ 0.9; (2): B/A ≥ 55 A is the contraction rate (%) of the polarizing film which has been heated at 80oC for 4 hours, and B is the contraction stress (N/mm2) of the polarizing film which has been heated at 80oC for 4 hours.
Patent TW-201939333-A (TW)
Title: Method and system for safely managing electronic device with electronic key with portable, safe, and convenient effects
Inventor: YU JIA-TING
IPC: G06F21/34
Filed: 2018-03-12
Abstract: This invention relates to a method and a system for safely managing an electronic device with an electronic key, mainly comprising an electronic key device connected through an electronic device. When the electronic device executes a firmware program and firmware password information is requested, a notification message is sent to the electronic key device. The electronic key device determines whether the authentication information input by a user is received; if yes, firmware password information will be sent to the electronic device. The electronic device enters the setting environment or other function options of the firmware program according to the firmware password information. The firmware password information of the electronic device is separated from the electronic key device, so that the electronic key device can be safely managed and provide portable, safe, and convenient effects.
Patent TW-201907604-A (TW)
Title: A method for manufacturing a biocompatible cathode slurry for use in biocompatible batteries for a contact lens
Inventor: FLITSCH FREDERICK A
IPC: G02C7/04
Filed: 2018-04-24
Abstract: Methods and apparatus to form biocompatible energization elements are described. In some examples, the methods and apparatus to form the biocompatible energization elements involve forming cavities comprising active cathode chemistry. The active elements of the cathode and anode are sealed with a biocompatible material. In some examples, a field of use for the methods and apparatus may include any biocompatible device or product that requires energization elements.
Patent TW-201842681-A (TW)
Title: Glass substrate and glass substrate for high frequency device
Inventor: MORI SHIGETOSHI
IPC: C03C4/08
Filed: 2018-04-26
Abstract: A glass substrate includes a plurality of through holes that penetrate from a first surface to a second surface of the glass substrate. Each through hole has an upper aperture with a first diameter on the first surface and a lower aperture with a second diameter on the second surface. For each of ten through holes selected from the plurality of through holes, a side wall length is obtained from the first and second diameters and the thickness of the glass substrate, and an R value is obtained by dividing the side wall length by the thickness of the glass substrate. The R values fall within a range of 1 to 1.1. A B value, obtained from dividing a difference between the greatest R value and the smallest R value by an average of the R values followed by multiplication with 100, is 5% or less.
Patent TW-202004767-A (TW)
Title: Memory correcting method capable of increasing the speed of correcting a memory and the fabrication yield of the memory
Inventor: HUANG CHIH-JEN
IPC: G11C29/04
Filed: 2018-05-16
Abstract: The invention provides a memory correcting method, which includes the steps of: providing a memory with a plurality of memory bytes each having M bits; adding a correcting byte having N correcting bits to each memory byte for correction; providing a non-volatile comparison memory byte, wherein the number of total bits of the non-volatile comparison memory byte is larger than or equal to the number of total bits of the memory and the correcting byte; and detecting whether there are any defective bits in the plurality of memory bytes, the correcting bytes, and the comparison memory bytes of the memory so as to complete the correction. Alternatively, the method includes the steps of: providing a comparison memory address byte having Q bits with respect to each of the memory bytes and the correcting bytes in order to label defective bit addresses in the memory bytes and the correcting bytes; and detecting whether there are any defective bits in the plurality of memory bytes, the correcting bytes, and the comparison memory address bytes of the memory so as to complete the correction.
Patent TW-201903967-A (TW)
Inventor: YAMAZAKI SHUNPEI
IPC: H01L21/768
Filed: 2018-05-14
Abstract: A semiconductor device with favorable electrical characteristics, a semiconductor device with stable electrical characteristics, or a highly reliable semiconductor device or display device is provided. A first insulating layer and a first conductive layer are stacked over a first region of a first metal oxide layer. A first layer is formed in contact with a second metal oxide layer and a second region of the first metal oxide layer that is not overlapped by the first insulating layer. Heat treatment is performed to lower the resistance of the second region and the second metal oxide layer. A second insulating layer is formed. A second conductive layer electrically connected to the second region is formed over the second insulating layer. Here, the first layer is formed to contain at least one of aluminum, titanium, tantalum, and tungsten.
Patent TW-201839265-A (TW)
Title: Comprehensive pump system and method having a quick change motor drive, automated gas removal and fluid recovery system and remote monitoring, viewing and control thereof
Inventor: VINES JOHN C
IPC: F04B43/04
Filed: 2014-03-14
Abstract: A precision pump system having a motor driver for accurately and repeatedly delivering process fluid, (e.g., photo chemicals) using a pumping fluid with minimal process fluid loss to a fabrication process and whereby the motor driver can be easily and quickly replaced without interrupting the fluid flow path. This is accomplished with the use of a process fluid reservoir and a pumping fluid reservoir that are associated with the pump, either integrated with the pump or closely adjacent. In addition, this precision pump system can be remotely monitored, viewed and controlled over the Internet. In addition, trapped process fluid within a downstream filtering block can be recirculated to the process fluid reservoir when trapped gas in the filter is removed. Furthermore, a nitrogen gas source is connected to the process fluid reservoir via a valve in case a need to insert a gas is required.
Patent TW-201918805-A (TW)
Title: Physical layer circuitry for multi-wire interface
Inventor: CHANG CHING-HSIANG
IPC: H03K3/037
Filed: 2018-07-19
Abstract: The present invention provides pad arrangements, termination circuits, clock and data recovery circuits, and deserialization architecture for a physical layer circuitry including a four-signal or six-signal physical medium attachment sublayer (PMA).
Patent TW-201912839-A (TW)
Inventor: SAITO SATOSHI
IPC: C23F1/18
Filed: 2018-07-20
Abstract: This microetching agent contains an inorganic acid, cupric ions, halide ions, and a water-soluble cationic polymer which contains a quaternary ammonium group in a side chain, while having a weight average molecular weight of 1,000 or more. The molar concentration of the halide ions is 5 to 100 times the molar concentration of the cupric ions in this microetching agent. It is preferable that the pH of this microetching agent is 2 or less. By using this microetching agent, a copper surface is able to be provided with a roughened shape that exhibits excellent adhesion to a resin and the like even if the amount of etching is low.
Patent TW-201921204-A (TW)
Title: Information processing device, manufacturing assistance system, valve assembly method, and device replacement method
Inventor: SATO TATSUHIKO
IPC: G05B19/418
Filed: 2018-07-26
Abstract: Provided is a technology which enables easy manufacture of a device having a rational specification. According to the information processing device 1: an analysis unit 11A creates, on the basis of use information of a valve 30, rational specification information representing a rational specification suited to the valve 30; a specification comparison unit 11B compares the rational specification information with specification information representing a prescribed specification; a specification update unit 11C updates, on the basis of the result of the comparison performed by the specification comparison unit 11B, the specification information of the valve 30; manufacturing condition creation means (manufacturing condition creation unit 11D, manufacturing condition update unit 11E) create, on the basis of the specification information updated by the specification update unit 11C, a manufacturing condition for the valve 30; and a command information creation unit 11G creates, on the basis of the manufacturing condition determined by a manufacturing condition determination means, command information relating to the manufacture of the valve for display on a display device 3.
Patent TW-202008584-A (TW)
Inventor: HUANG TSUNG-YI
IPC: H01L29/66
Filed: 2018-08-06
Abstract: 本發明提出一種高壓元件及其製造方法。高壓元件包含：半導體層、絕緣結構、深井區、埋層、第一高壓井區、第一導電型井區、第二高壓井區、本體區、本體極、深井柱、閘極以及源極與汲極。其中，深井柱於通道方向上，介於閘極之導電層靠近源極之一側，與汲極之間，以提供少數載子吸收通道，而抑制寄生電晶體導通。
Patent TW-201921317-A (TW)
Title: Nuisance reduction using location-based attributes
Inventor: BRAUER BJORN
IPC: G06T7/90
Filed: 2018-08-07
Abstract: Methods and systems are disclosed that provide nuisance reduction in images, such as semiconductor images that include one or more metal lines. A potential defect is correlated against pixel grey level intensity charts for two perpendicular axes. A position of the potential defect relative to a pattern, such as a metal line, is determined along the two axes. The potential defect can be classified as a defect of interest or nuisance event.
Patent TW-202007627-A (TW)
Inventor: LIN TI-CHING
IPC: B65H29/54
Filed: 2018-08-07
Abstract: 一種輸送設備，包括複數條輸送線和至少一撐高裝置。輸送線在從一入口端往一出口端的一第一水平方向上延伸，並在垂直於第一水平方向的一第二水平方向上依序配置。該些輸送線包括一第一輸送線和一第二輸送線，第一輸送線用於一第一片狀物件的輸送，第二輸送線用於相鄰於第一片狀物件的一第二片狀物件的輸送。撐高裝置配置在輸送線中對應的至少一輸送線下方。該至少一撐高裝置包括一第一撐高裝置，第一撐高裝置位於第一輸送線下方並撐高第一輸送線使得第一輸送線在一垂直方向上呈現高度變化。
Patent TW-202010215-A (TW)
Inventor: WEI CHING-CHUANG
IPC: H02J11/00
Filed: 2018-08-10
Abstract: A battery-charging device is provide, which may include a first power supplier and a second power supplier. The first power supplier may include a plurality of first connection circuits connected to a plurality of batteries respectively. The second power supplier may include a plurality of second connection circuits connected to the batteries respectively, where the supply voltage of the second power supplier may be higher than that of the first power supplier. When the voltage of any one of the batteries is lower than a first threshold, the first connection circuit, corresponding to the battery, of the first power supplier is turned on to charge the battery, and the second connection circuit, corresponding to the battery, of the second power supplier is periodically or non-periodically turned on to detect whether the voltage of the battery is higher than a second threshold.
Patent TW-202009930-A (TW)
Title: 記憶體裝置以及記憶體控制方法
Inventor: CHIANG JU-AN
IPC: G11C5/14
Filed: 2018-08-14
Abstract: 一種記憶體裝置，包括：電源供應裝置、電力開啟重置裝置、記憶體陣列以及記憶體控制器。電源供應裝置將外部供應電壓轉換成內部供應電壓。當偵測外部供應電壓超過第一臨限值時，電力開啟重置裝置產生重置信號。電力開啟重置裝置更根據深度睡眠信號，將第一臨限值升高至第二臨限值。記憶體陣列接受內部供應電壓供電。記憶體控制器接受內部供應電壓供電以及存取記憶體陣列，並根據重置信號而重置。當記憶體控制器操作於深度睡眠模式時，記憶體控制器發出深度睡眠信號。
Patent TW-201926693-A (TW)
Title: Gate stack for heterostructure device
Inventor: RAMDANI JAMAL
IPC: H01L29/51
Filed: 2018-10-04
Abstract: A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first and second active layers. A sandwich gate dielectric layer structure is disposed on the second active layer. A passivation layer is disposed over the sandwich gate dielectric layer structure. A gate extends through the passivation layer to the sandwich gate dielectric layer structure. First and second ohmic contacts electrically connected to the second active layer. The first and second ohmic contacts are laterally spaced-apart, with the gate being disposed between the first and second ohmic contacts.
Patent TW-201925371-A (TW)
Title: Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode
Inventor: HATAKEYAMA JUN
IPC: C08G18/48
Filed: 2018-10-18
Abstract: The present invention provides a bio-electrode composition including: a resin containing a urethane bond in a main chain and a siloxane bond in a side chain; and an electro-conductive material, wherein the electro-conductive material is a polymer compound having one or more repeating units selected from fluorosulfonic acid salts shown by the following formulae (1)-1 and (1)-2, sulfonimide salts shown by the following formula (1)-3, and sulfonamide salts shown by the following formula (1)-4. This can form a living body contact layer for a bio-electrode that is excellent in electric conductivity and biocompatibility, light in weight, manufacturable at low cost, and free from large lowering of the electric conductivity even when it is wetted with water or dried. The present invention also provides a bio-electrode in which the living body contact layer is formed from the bio-electrode composition, and a method for manufacturing the bio-electrode.