baber/WOPTO huggingface dataset:
Patent TW-550244-B (TW)
Title: Optical glass and process for the production of optical
Inventor: TACHIWAMA KAZUO
IPC: C03C3/068
Filed: 2001-05-29
Granted: 2003-09-01
Abstract: Disclosed is an optical glass having high-refractivity and low-dispersion optical properties and having a low glass transition point so that a heat-treating furnace can be operated for a long period of time. The present invention provides an optical glass having a refractive index nd of at least 1.875, an Abbe's number nud of at least 39.5 and a glass transition point Tg of 700 DEG C or lower, an optical glass which is a borosilicate glass comprising at least one selected from La2O3, Gd2O3, Y2O3 or Yb2O3 and at least one selected from ZrO2, Ta2O5 or Nb2O5, wherein the ratio (weight ratio) of the total content of La2O3, Gd2O3, Y2O3 and Yb2O3 to the total content of SiO2 and B2O3 is from 3.2 to 5 and the ratio (weight ratio) of the total content of ZrO2, Ta2O5 and Nb2O5 to the total content of SiO2 and B2O3 is from 1.1 to 1.5, and which has a refractive index nd of at least 1.875 and an Abbe's number nud of at least 39.5, and the like.
Patent TW-I242411-B (TW)
Title: Method of preparing an unsaturated fatty acid dry concentrate
Inventor: FUCHS NORBERT
IPC: A23L27/00
Filed: 2001-06-14
Granted: 2005-11-01
Abstract: There is provided a method of preparing an unsaturated fatty acid dry concentrate, wherein a substance comprising at least one unsaturated fatty acid is applied on a biologically inert matrix having a large surface area and is subsequently dried, as well as a composition comprising at least one unsaturated fatty acid and foods, beverages, drugs comprising this composition.
Patent TW-593276-B (TW)
Title: Process for producing epsilon-caprolactam
Inventor: SHIMAZU YASUMOTO
IPC: C07D201/16
Filed: 2001-06-20
Granted: 2004-06-21
Abstract: A high purity epsilon-caprolactam is prepared by pouring a molten crude epsilon-caprolactam and a solvent comprising an aliphatic hydrocarbon and having a lower temperature than that of the crude epsilon-caprolactam, into a vessel and mixing them to obtain a first slurry containing a crystallized epsilon-caprolactam. The slurry is then subjected to a solid-liquid separation to obtain epsilon-caprolactam and a first liquid phase. This process can effectively remove impurities from a crude epsilon-caprolactam, which is obtained by for example, subjecting cyclohexanone oxime to the Beckmann rearrangement.
Patent TW-552781-B (TW)
Title: System, method and apparatus for access channel traffic management
Inventor: CASACCIA LORENZO
IPC: H04L12/56
Filed: 2001-06-28
Granted: 2003-09-11
Abstract: In a system, method, and apparatus according to an embodiment of the invention, traffic on a basic access channel and a reserved access channel is managed to maximize use of the basic access channel while minimizing delays.
Patent TW-I247358-B (TW)
Title: Etch stop layer of compound material in semiconductor manufacturing process
Inventor: LI LIAN-JONG
IPC: H01L21/311
Filed: 2001-07-06
Granted: 2006-01-11
Abstract: The present invention relates to a compound etch stop layer structure with low dielectric coefficient. The compound etch stop layer comprises a TEOS material layer, and one among silicon nitride, silicon carbide or silicon carbon nitride. The characteristics of compactness and low dielectric coefficient provided in TEOS material layer is not only used for a water-resistant film to improve the water absorption of porous and low-dielectric-coefficient material, but also possesses lower dielectric coefficient than the conventional etching stop layer material like silicon nitride, silicon carbide or a silicon carbon nitride. Therefore, the partial thickness of the conventional etch stop layer material is replaced by the TEOS material layer, and the dielectric coefficient of the overall etching stop layer is lowered. In addition, the TEOS material layer in the dielectric layer with low k value containing carbon, such as the tetramethylsilane, also has the effect of improving etching selectivity ratio and also effectively solves the problem of residual photoresist for double damascene process.
Patent TW-494605-B (TW)
Title: Coaxial dielectric rod antenna
Inventor: POPA ADRIAN E
IPC: H01Q5/10
Filed: 2001-07-11
Granted: 2002-07-11
Abstract: An antenna. The antenna includes a first dielectric antenna rod having a first dielectric constant. The first dielectric antenna rod is coupled to a first frequency transmission source for propagating first frequency band radiation from the first dielectric antenna rod into a medium having a medium dielectric constant. A second dielectric antenna rod is provided having a second dielectric constant. The second dielectric antenna rod is coupled to a second frequency transmission source for propagating second frequency band radiation from the second dielectric antenna rod into the medium. The first dielectric antenna rod is coaxially mounted within the second dielectric antenna rod. The first dielectric constant is greater than the second dielectric constant. The second dielectric constant is greater than the medium dielectric constant.
Patent TW-I229287-B (TW)
Title: Single instruction multiple data (SIMD) processor capable of designating plural registers
Inventor: SHIMIZU TAKEHIRO
IPC: G06F9/302
Filed: 2001-08-15
Granted: 2005-03-11
Abstract: The object of the present invention is to reduce a factor for preventing SIMD operation effects, such as data arrangement in a register in the acceleration of a SIMD processor. To solve the problem, many pieces of data can be supplied to a data arrangement operation pipe and a data arrangement operation can be fast carried out by dividing a register file into four banks so as to designate a plurality of registers with one operand to simultaneously access four registers. Further, by defining new data pack instruction, data unpack instruction and data permutation instruction, data supplied in a large number can be aligned efficiently. Further, by the above-described characteristic, definition of multiply accumulate operation instruction maximizing parallelism of SIMD can be carried out.
Patent TW-517235-B (TW)
Title: Semiconductor memory device and method of refreshing the same
Inventor: TAKAHASHI HIROYUKI
IPC: G11C11/406
Filed: 2001-08-31
Granted: 2003-01-11
Abstract: A semiconductor memory device capable of reducing the power consumption for refreshing the same as compared with the prior art. The cell arrays S0, S1 can be divided into four blocks B00-B03 and B10-B13, respectively. During a general read/write operation, if one cell array is selected by an address data specifying a word line, then one block of the selected array is selected, and further one word line of the selected block is also selected. One the other hand, during a refreshing operation, while one cell array is selected, all the four blocks of the selected cell array are refreshed. That is, one word line from each of the four blocks is selected and the selected word lines are refreshed. By thus, as compared with the case to refresh the word lines of a plurality of cell arrays simultaneously, the present invention can reduce the power consumption therefor.
Patent TW-I308249-B (TW)
Title: Display
Inventor: CHEN XIANHAI
IPC: G02F1/167
Filed: 2001-09-28
Granted: 2009-04-01
Abstract: This invention relates to a novel composition suitable for use in the manufacture of electrophoretic display cells. The mechanical properties of the cells are significantly improved with this composition in which a rubber material is incorporated.
Patent TW-534933-B (TW)
Title: A spun yarn
Inventor: YUUKI YASUNORI
IPC: D03D15/00
Filed: 2001-10-05
Granted: 2003-06-01
Abstract: This invention provides a spun yarn comprising at least 15% by weight of polytrimethyleneterephthalate short fiber and having a value determined by the equation 0.1X+70 (X denotes a content % by weight of polytrimethyleneterephthalate short fiber in the spun yarn) of a modulus at 5% elongation, or more. The spun yarn of the present invention has an excellent woven or knitted property, stretchability, stretch-recovery, shape-stability and durability for long use.
Patent TW-538568-B (TW)
Title: Device for inserting wires or pipes into a sheath
Inventor: TINTI SANZIO
IPC: H02G1/08
Filed: 2001-10-19
Granted: 2003-06-21
Abstract: A device for inserting wires or pipes into a sheath has a tubular mean (2) with an inlet opening (21) and it has, in correspondence of an outlet opening (22) a slanting and ogive-shaped opening mean (3). The tubular mean (2) and the opening mean (3) are substantially constituted by a first portion (4) and a second portion (5) carried out in a single block and rotating around a foldable section (6), carried out in correspondence of the opening mean (3). The potions first (4) and a second (5) rotate around the foldable section (6) between a maximum opening condition (D) and a closing condition (C) in correspondence of which the contact edges first (7) and second (8), respectively of the first portion (4) and second (5), mutually mate.
Patent TW-I230794-B (TW)
Title: Semiconductor tester, semiconductor integrated circuit and semiconductor testing method
Inventor: TOYODA HIROYUKI
IPC: G01R31/28
Filed: 2001-12-24
Granted: 2005-04-11
Abstract: The voltage output terminals of a semiconductor integrated circuit are connected to the first ends of resistors while the second ends of the resistors are connected to a common signal line. Taking advantage that the potential of the signal line presents the mean voltage value of the voltages output from all the voltage output terminals, the deviation of the potential at each voltage output terminal from the mean value and the difference of this mean value from the ideal value are determined, whereby the suitability of the output voltage from each of the output terminals is examined.
Patent TW-513785-B (TW)
Title: CMOS framework having dynamic threshold voltage
Inventor: JANG YAU-WEN
IPC: H01L27/06
Filed: 2001-12-31
Granted: 2002-12-11
Abstract: A kind of CMOS framework with dynamic threshold voltage has MOS transistor, the first diode and the second diode. The first connecting terminal of the first diode is connected with the gate of MOS transistor, and the second connecting terminal of the first diode is connected with the substrate of MOS transistor. The first connecting terminal of the second diode is connected with a bulk voltage, and the second connecting terminal of the second diode is connected with the substrate of the MOS transistor.
Patent TW-525357-B (TW)
Title: Method and apparatus for forward power control in a communication system
Inventor: WHEATLEY CHARLES E III
IPC: H04B7/005
Filed: 2001-12-31
Granted: 2003-03-21
Abstract: In a data communication system capable of variable rate transmission, the data rate is determined by the largest C/I measurement of the forward link signals as measured at the Access Terminal 6. In one embodiment, the data transmission is scheduled based on an Access Terminal 6 initiated forward power control, which reduces forward link rate quantization loss due to excess transmit power. The Access Terminal 6 reports to the Access Point 4 the excess C/I estimate for the selected rate. The Access Point 4 then reduces its transmit power by an appropriate amount when serving that Access Terminal 6. In another embodiment, the data transmission is scheduled based on an Access Point 4 initiated forward power control. The Access Point 4 varies its transmit power over time either randomly or in synchronism with neighboring Access Points 4 in the communication system, which enables an increase in the throughput achieved by users that receive a significant amount of interference.
Patent TW-533681-B (TW)
Title: High speed voltage controlled oscillator
Inventor: WANG YU-MIN
IPC: H03L7/00
Filed: 2002-01-22
Granted: 2003-05-21
Abstract: A high speed voltage controlled oscillator is disclosed, which has resolution of 1/N phase and has a loadable counter, 1/N phase difference generator, multiplexer, clock selector, and load controller. Since the high speed voltage controlled oscillator of the present invention needs only one set of loadable counters whose input frequency is (D+1) times that of the output frequency (D<<N), and the first and the (M/2 +1)th phases of the generated M (M<<N) clock signals with 1/N phase difference by the 1/N phase difference generator are fixed at the 0 DEG and 180 DEG with respect to the reference clock, so that only (M/2-1) clock signals are affected by the variation error of the process parameters. Therefore, the high speed voltage controlled oscillator of the present invention can allow the variation error of the process parameters and is suitable for the use of high-resolution and high-frequency operations.
Patent TW-548798-B (TW)
Title: High Q inductor with faraday shield and dielectric well buried in substrate
Inventor: ACOSTA RAUL E
IPC: H01F17/00
Filed: 2002-02-08
Granted: 2003-08-21
Abstract: Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below the inductor and is optionally filled with cured low-k organic dielectric or air.
Patent TW-I267271-B (TW)
Title: Method and apparatus for providing multiple quality of service levels in a wireless packet data services connection
Inventor: ABROL NISCHAL
IPC: H04L47/43
Filed: 2002-03-12
Granted: 2006-11-21
Abstract: The packets generated by each of multiple packet data applications are provided to a single point-to-point protocol (PPP) stack 202 and a single high-level data link control (HDLC) framing layer 204 to convert data packets into byte streams suitable for transmission through radio link protocol (RLP) connections. Each of the resultant multiple byte streams is then provided to one of multiple RLP connections having different retransmission and delay properties (206 and 208). The RLP connection selected for sending data from each application is based on the grade of service most appropriate for the application. At the receiver, the data from the multiple RLP connections (218 and 216) is provided to a single PPP stack 210.
Patent TW-593212-B (TW)
Title: Methods for the treatment of inorganic fertilizers and nitrification inhibitor-containing treated inorganic fertilizers
Inventor: BARTH THOMAS
IPC: C05G3/90
Filed: 1997-08-06
Granted: 2004-06-21
Abstract: The use of inorganic or organic polyacids for the treatment of inorganic fertilizers, in particular the use of the polyacids as a mixture with at least one nitrification inhibitor for the treatment of inorganic fertilizers; and the corresponding treated inorganic fertilizers per se.
Patent TW-567338-B (TW)
Title: Antireflection film, polarizing plate, and apparatus for displaying an image
Inventor: HOKAZONO HIROHISA
IPC: G02B1/11
Filed: 2002-04-10
Granted: 2003-12-21
Abstract: An antireflection film having a low reflectance and giving non-tinged reflected light with a low cost, which comprises: a transparent substrate; and a low-refractive layer having a lower refractive index than said transparent substrate, wherein the antireflection film has an average specular reflectance of 0.5% or less at an incidence angle of 5 DEG in a wavelength region of from 450 to 650 nm, and, when CIE standard illuminant D65 in a wavelength region of from 380 to 780 nm is incident on the antireflection film at an incidence angle of 5 DEG, the regular reflection light has a color having a* and b* values in a ranges specified by -7 <= a* <= 7 and -10 <= b* <= 10 in the CIE 1976 L*a*b* color space.
Patent TW-536642-B (TW)
Title: Optical switch
Inventor: JANG JIA-SHIUNG
IPC: G02B6/35
Filed: 2002-04-19
Granted: 2003-06-11
Abstract: The present invention provides an optical switch, primarily used in an optical communication or optical system to switch optical signal to different optical paths. A server motor rotates a round mirror body with two faces coated or deposited with a reflective film. The round mirror body has a plurality of apertures to make the optical signals outputted from the plurality of fibers directly pass through the apertures for being transmitted to other plurality of fibers. Alternatively, the optical signal can be reflected to other plurality of fibers by the reflective film, thereby achieves switching of optical paths for the optical signals.
Patent TW-548869-B (TW)
Title: Metal air electrochemical cell system
Inventor: SHAW IAN
IPC: H01M6/38
Filed: 2002-04-24
Granted: 2003-08-21
Abstract: Herein disclosed is a metal air electrochemical cell, which generally includes an anode metal fuel material that may be infused into a container. The container may comprise a metering device, such as a toothpaste-like container, a syringe-like container, a caulking tube type container, a disposable condiment-like container, etc. These metering devices facilitate dispensing of a quantity of the metal fuel paste into a suitable structure generally including a cathode, a separator, and current collectors.
Patent TW-I258920-B (TW)
Title: Surface acoustic wave device and communication device using same
Inventor: YATA MASARU
IPC: H03H9/64
Filed: 2002-06-07
Granted: 2006-07-21
Abstract: Two or more comb-shaped electrode portions (11, 12, 13, 21, 22, and 23) are provided on a piezoelectric substrate (60) so as to have a balanced-to-unbalanced conversion function. At least one of the adjacent electrode fingers at the boundaries of adjacent comb-shaped electrode portions (11, 12, 13, 21, 22, and 23) is connected to one of an unbalanced terminal (5) and balanced terminals (6 and 7).
Patent TW-544846-B (TW)
Title: Method for manufacturing dielectric layer of capacitor
Inventor: WU YUNG-HSIEN
IPC: H01L21/76
Filed: 2002-06-19
Granted: 2003-08-01
Abstract: There is provided a method for manufacturing dielectric layer of capacitor, which is performed in a deep trench of a semiconductor substrate. At first, a pre-cleaning process is performed and then a SiN deposition process is performed to form a SiN layer on the sidewall and bottom of the deep trench. Next, a re-oxidization process is performed to grow an oxide layer on the surface of the SiN layer. Finally, a nitrification process with N2O is employed to form a nitride layer on the surface of the oxide layer.
Patent TW-I225055-B (TW)
Title: Process for the preparation of 5-substituted isobenzofurans
Inventor: DALL ASTA LEONE
IPC: C07C251/48
Filed: 2002-07-31
Granted: 2004-12-11
Abstract: There is described a process for the preparation of citalopram and of its pharmaceutically acceptable salts, which comprises treating a 1-[3-(dimethylamino)propyl]-1-(4-fluorophenyl)-1,3-dihydro-5-isobenzofurancarbaldoxime, O-substituted preferably with a diphenylmethyl or triphenylmethyl group, with formic-acetic anhydride. Furthermore, the total synthesis of citalopram, as free base or in form of its pharmaceutically acceptable salt, starting from 5-formylphthalide is described.
Patent TW-558602-B (TW)
Title: Low-speed fuel apparatus of carburetor
Inventor: KURE TAKEO
IPC: F02M29/00
Filed: 2002-09-10
Granted: 2003-10-21
Abstract: To provide an inexpensive low speed fuel apparatus in a carburetor by improving a number of parts constituting an air cut valve apparatus and an assembling efficiency, an air cut valve apparatus (A), which is arranged in a second low speed air passage (12) branched from a first low speed air passage (7), is sectioned into a low speed air chamber (10) and a pressure receiving chamber (11) by a partition body (8), an upstream side second low speed air passage (12A) and a valve body guide hole (20) are open to the low speed air chamber (10), an annular groove portion (21) having a diameter (E) larger than a diameter (D) of the valve body guide hole (20) is formed in the valve body guide hole (20), a downstream side second low speed air passage (12B) provided with a second low speed air jet (18) is open to the annular groove portion (21), and a valve body (22) integrally mounted with the partition body (8) and opening and closing an opening of the annular groove portion (21) to an inner portion of the value body guide hole (20) is slidably arranged in the valve body guide hole (20).
Patent TW-559980-B (TW)
Title: Substrate feed chamber and substrate processing apparatus
Inventor: TAKAHASHI NOBUYUKI
IPC: B65G49/00
Filed: 2002-09-26
Granted: 2003-11-01
Abstract: A substrate feed chamber that is equipped in a substrate processing apparatus is provided. The substrate feed chamber has a storage tray capable of storing simultaneously three or more substrate holding trays that hold substrates in a vertical or substantially vertical condition and a horizontal movement mechanism that moves horizontally the storage tray with respect to the substrate feed position in order to effect feeding-in or feeding-out movement of the substrate holding tray between any of the chambers of a group consisting of processing chambers and load lock chambers and, in addition, if required, has a rotary movement device that rotates the storage tray. Improvement in throughput in a substrate processing apparatus can thereby be achieved and increase in the ground-contacting area of the device as a whole can be prevented.
Patent TW-531662-B (TW)
Title: Structure for reflection of light
Inventor: CHANG SEAN
IPC: F21Y101/00
Filed: 2002-09-27
Granted: 2003-05-11
Abstract: A structure for reflection of light comprising a curved surface for reflecting the light from a light source located on a focus of the curved surface, and a semi-sphere surface for reflecting the light from the light source located on a center of the semi-sphere surface. In specific, the focus of the curved surface and the center of the semi-sphere surface are so positioned as to be on substantially the same location, thus after the light from the light source located on the center of the semi-sphere surface is reflected by the semi-sphere surface, the reflected light passes through the center to irradiate on the curved surface, so that all of the light from the light source can pass through the center to irradiate on the curved surface and is then reflected by the same so as to obtain a condensed light beam with the smaller angle and spotlighted area.
Patent TW-580700-B (TW)
Title: Thin film magnetic memory device conducting read operation by a self-reference method
Inventor: OOISHI TSUKASA
IPC: H01L27/105
Filed: 2002-11-14
Granted: 2004-03-21
Abstract: In read operation, a current from a current supply transistor flows through a selected memory cell and a data line. Moreover, a bias magnetic field having such a level that does not destroy storage data is applied to the selected memory cell. By application of the bias magnetic field, an electric resistance of the selected memory cell changes in the positive or negative direction depending on the storage data level. A sense amplifier amplifies the difference between voltages on the data line before and after the change in electric resistance of the selected memory cell. Data is thus read from the selected memory cell by merely accessing the selected memory cell. Moreover, since the data line and the sense amplifier are insulated from each other by a capacitor, the sense amplifier can be operated in an optimal input voltage range regardless of magnetization characteristics of the memory cells.