Patent GB-1460961-A (GB)
Title: Logic integrated circuit
IPC: H01L27/092
Filed: 1974-01-21
Abstract: 1460961 Integrated circuits PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 21 Jan 1974 [1 Feb 1973] 2702/74 Heading H1K [Also in Division H3] An integrated circuit comprises a logic circuit including a row of transistors of one type and a parallel row of transistors of the complementary type, supply lines running mainly parallel to the rows and logic signal input lines at least one of which crosses one of the supply lines, the transistors of one row being in one part of the circuit disposed between one of the supply lines and a node constituting a signal output from the circuit and those of the other being in a second part of the circuit between the node and the other supply line. In each part there is a transistor corresponding to each transistor in the other part, the control electrodes of corresponding transistors being connected to the same input signal line. Both parts of the circuit individually form the same logic combination of input signals, the arrangement being such that when one part provides a conductive path between supply line and node all current paths between the other supply line and node include at least one non-conductive transistor. Preferably each series or parallel arrangement of transistors in one part corresponds to a parallel or series arrangement respectively of the corresponding transistors in the other part and each series (parallel) arrangement of parallel (series) circuits has a corresponding parallel (series) arrangement of series (parallel) circuits in the other part. The arrangements for the two parts may be derived from the same equation written in the same form, or in different forms if this gives rise to a simpler arrangement with less transistors in series. Various circuits of the above type utlizing IGFETS, which together constitute a full adder, are described as are other circuits providing other logic functions and using field effect transistors or bipolar transistors with integrated base resistors. Typically the structure consists of an N-type silicon substrate with an N-surface layer in which P-type surface regions are formed by diffusion or ion implantation, these regions and corresponding N surface regions, in each of which the source and drain regions of several MOSFETs with self registering Mo or polycrystalline gates may be similarly formed, being mutually isolated by inset genetic oxide or by open or insulation filled grooves. The layer of material from which the gates are formed also provides the signal input lines and surface oxidation or deposited insulation isolates it from a second conductive layer from which supply lines are formed. Arrangements are described in which the supply lines lie outside, or between, the rows of transistors, both the supply and signal lines generally lying on an imaginary rectangular grid. Conductors interconnecting individual circuits may cross other circuits on the inset oxide and isolation may be provided between parts of a continuous surface region by conductors crossing the regions and appropriately biased to act as gates. To simplify the connections corresponding transistors in the two parts of a circuit occupy corresponding positions in the rows.