baber/WOPTO huggingface dataset:
Patent TW-439186-B (TW)
Title: A partially recessed shallow trench isolation method for fabricating borderless contacts
Inventor: CHONG WEE LIM
IPC: H01L21/76
Filed: 1999-10-08
Granted: 2001-06-07
Abstract: An improved and new process for fabricating MOSFET's in shallow trench isolation (STI), with sub-quarter micron ground rules, includes a passivating trench liner of silicon nitride. The silicon nitride passivating liner is utilized in the formation of borderless or ""unframed"" electrical contacts, without reducing the poly to poly spacing. Borderless contacts are formed, wherein contact openings are etched in an interlevel dielectric (ILD) layer over both an active region (P-N junction) and an inactive trench isolation region. During the contact hole opening, a selective etch process is utilized which etches the ILD layer, while the protecting passivating silicon nitride liner remains intact protecting the P-N junction at the edge of trench region. Subsequent processing of conductive tungsten metal plugs are prevented from shorting by the passivating trench liner. This method of forming borderless contacts with a passivating trench liner in a partially recessed trench isolation scheme improves device reliability since it prevents electrically short circuiting of the P-N junction and lowers the overall diode leakage. In addition, the use of this invention's semi-recessed STI process scheme helps to reduce the aspect ratio of the trench, thereby aiding the filling of the trench. Therefore, with the process described herein, STI oxide seam formation is eliminated.
Patent TW-437051-B (TW)
Title: Electrostatic discharge protection component with silicon controlled rectifier
Inventor: YU DA-LI
IPC: H01L23/60
Filed: 2000-01-05
Granted: 2001-05-28
Abstract: An electrostatic discharge protection component for composite voltage application system which employs a silicon controlled rectifier as the basic bypass component; and, stacking at least two MOSFETs in cascade configuration so as to reduce the trigger voltage of protection component. The voltage between the gate to the drain, the gate to the source, or the source to the drain of each transistor will not exceed the low supply voltage so that all of the dielectric layers will not be challenged by the hot carrier reliability.
Patent TW-506896-B (TW)
Title: Contact lens transfer and material removal system
Inventor: SCHLAGEL MARK
IPC: B25J15/00
Filed: 2000-03-29
Granted: 2002-10-21
Abstract: A method and apparatus for transferring a wet object, such as a contact lens, from a first station to a second station includes a probe having a barrel with a passage for communication with a vacuum source and a pressurized gas source, a nozzle at the end of the passage, and a hood around the nozzle in communication with a vacuum source. The barrel is moved in a first direction to place the nozzle adjacent the object in the first station and the vacuum from the nozzle attaches the object to the nozzle. Moving the barrel in a second direction removes the nozzle with the object attached from the first station. The probe is moved to the second station with the object attached. The barrel is moved in the first direction to place the object at the second station, the vacuum is removed from the nozzle and pressurized gas is applied through the barrel passage to remove the object from the nozzle and deposit it at the second station and, at the same time, blow off matter from the object. Vacuum is applied to the hood when the probe is at the second station for the hood to collect the matter blown the object by the compressed gas.
Patent TW-464860-B (TW)
Title: Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
Inventor: LIENAU RICHARD M
IPC: G11C11/00
Filed: 2000-03-04
Granted: 2001-11-21
Abstract: A non-volatile RAM device is disclosed which utilizes a plurality of ferromagnetic bits (6) each surrounded by a coil of a write line (13) for directing the remnant polarity thereof is disclosed. The direction of magnetic remnance in each bit (6) is dictated by the direction of a current induced into write line (13). Further, a magneto sensor (7) comprising a magneto resistor (1) coupled to a pair of collectors (2a and 2b) is placed approximate each bit (6). The magneto resistor (1) is coupled to a control circuit (30) for receiving current. The current passing across magneto resistor (1) is biased in a direction either right or left of the original current flow direction. The collectors are coupled to a pair of sense lines (4a and 4b), which are in turn, coupled to a voltage differential amplifier (12). The collector in the direction of biased current flow, will receive a greater number of electrons than the other collector, and therefore have a greater negative charge. This voltage differential is conducted through the sense lines (4a and 4b) to the voltage differential amplifier (12), where it is amplified and detected.
Patent TW-464862-B (TW)
Title: Memory device
Inventor: NISHIMURA KOICHI
IPC: G11C11/409
Filed: 2000-03-13
Granted: 2001-11-21
Abstract: A memory device having memory cells at cross sections of word lines and bit lines, a word-line driver for driving the word lines in response to a first activation signal, a delay circuit for generating a second activation signal that delays the first activation signal, and a sense amp for amplifying the voltage read from the memory cell in response to the second activation signal, comprises: a first power-supply voltage that is supplied to the word-line driver, and a second power-supply voltage that is supplied to the delay circuit, where the second power-supply voltage is generated from the first power-supply voltage. In the present invention, there is a first power-supply voltage that is supplied to the word-line driver, and a second power-supply voltage that is supplied to the delay circuit. And since the second power-supply voltage is generated from the first power-supply voltage, the delay time of the delay circuit is depending on the first power-supply voltage, but does not depend on the first power-supply voltage, but does not depend on the external power supply voltage. In addition, the activation timing of the sense amp does not become faster due to fluctuations of the external power-supply voltage, and since it is possible to stably maintain the required WL-LE interval, it is possible to operate the memory properly without an increase in power consumption of the memory device.
Patent TW-I223234-B (TW)
Title: A system, method and computer program product of manufacture for interactive, network support of information based on the electronic content of a laser-centric medium
Inventor: COLLART TODD R
IPC: G06F21/16
Filed: 2000-04-21
Granted: 2004-11-01
Abstract: A system, method, and article of manufacture is provided for tracking and supporting the distribution of content electronically. First, an electronic storage medium tracking identifier is incorporated onto an electronic storage medium and stored on a database. Next, a package tracking identifier is situated onto a package in which the electronic storage medium is stored. The electronic storage medium is then tracked while being shipped between various entities using the tracking identifier on the package. Further, the electronic storage medium may be identified using the tracking identifier on the electronic storage medium in order to afford various advertising, security, support, or retail-related features. The system includes logic for downloading and updating retailer-specific information of the DVD utilizing BCA information for intelligent processing. When a user connects to the Internet with a DVD application active, logic detects a live Internet connection, reads the BCA information, and initiates a connection to the server. Then, the DVD application requests all available support information from the server for the retailer of the currently inserted DVD. The server performs a table lookup to ascertain the retailer that sold the original DVD, and the server performs another table lookup to determine the download information, and the server passes the download information to the application using HTTP protocol. Finally a transaction is posted to the server database that memorializes the events.
Patent TW-451366-B (TW)
Title: Power device chip package and method for manufacturing the same
Inventor: CHEN SHR-GUAN
IPC: H01L21/58
Filed: 2000-05-29
Granted: 2001-08-21
Abstract: The present invention relates to a power device chip package and a method for manufacturing the same. The power device chip (11) has a first surface (111) including a first electrode (10) and a second electrode (20), and a second surface (112) including a third electrode (30). The first electrode (10) and second electrode (20) of the chip (11) are electrically connected to a first portion (151) and a second portion (152), respectively, of a first leadframe (15). The first leadframe (15) extends from the place over the first electrode (10) and second electrode (20) of the chip to the place outside the chip. The third electrode (30) of the chip is electrically connected to a second leadframe (16), and the second leadframe (16) extends from the place over the third electrode (30) of the chip to the place outside the chip. The present invention provides a power device chip package in which the die area can be utilized efficiently and the capability of heat dissipation is excellent. In addition, the present invention has the advantages of easy fabrication and high productivity.
Patent TW-480550-B (TW)
Title: Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors
Inventor: MORRISON MICHAEL
IPC: H01C17/242
Filed: 2000-06-08
Granted: 2002-03-21
Abstract: A precision resistor of NiCr or SiCr has a refractive and thermal barrier layer beneath the resistor. The refractive barrier is a layer of refractory metal. The refractory metal prevents the incident laser beam of a laser trimmer penetrating lower layers of the device. Unwanted reflections and refractions caused by lower layers are avoided. The reflective barrier layer is a material selected from the group consisting of tungsten titanium molybdenum TiSi2, CoSi2, MoSi2, TaSi2 and WSi2.
Patent TW-487616-B (TW)
Title: Continuous fluid-operated wrench
Inventor: JUNKERS JOHN K
IPC: B25B21/00
Filed: 2000-06-23
Granted: 2002-05-21
Abstract: A fluid operated wrench has a fluid-operated drive including a cylinder, a piston reciprocatingly movable in the cylinder and having a piston rod with a piston rod end, a ratchet mechanism having a ratchet provided with a plurality of teeth, and at least two pawls operatively connectable with the piston rod end and engageable with a teeth of the ratchet so that during an advance stroke of the piston one of the at least two pawls engages with at least one ratchet tooth while the other of the at least two ratchets over at least one ratchet tooth, while during a return stroke of the piston the other of the at least two pawls engages with at least one ratchet tooth while the one of the at least two pawls ratchets over at least one ratchet tooth, at least one of the at least two pawls being disengageable from and liftable above the teeth of the ratchet so as to permit the ratchet to turn backwards to release a buildup torsion and material flex, so that the fluid operated wrench can be taken off a job.
Patent TW-554116-B (TW)
Title: Gas jet removal of particulated soil from fabric
Inventor: CHAO SIDNEY C
IPC: D06G1/00
Filed: 2000-07-12
Granted: 2003-09-21
Abstract: Fabrics are cleaned by treating at least a portion of the piece of fabric with a particulating chemical, and agitated by a gas jet of a particle-dislodging gas to dislodge the particulated soil. The particulating chemical loosens embedded non-particulate soil and converts it to a particulate form, which is then separated from the fabric by the particle-dislodging gas.
Patent TW-466766-B (TW)
Title: Power MOSFET apparatus with the capability of decreasing conduction resistance value as well as increasing anti-avalanche breakdown current and the manufacturing method of the same
Inventor: JIAN FENG-TZUO
IPC: H01L29/772
Filed: 2000-08-18
Granted: 2001-12-01
Abstract: The present invention discloses a kind of power MOSFET apparatus with the capability of decreasing conduction resistance value as well as increasing the anti-avalanche breakdown current and its manufacturing method. For the epitaxial layer below the source metal contact of the invented apparatus, the manner of entirely heavy doping, the reduction of Rj region resistivity, and the process of planar technique for power MOSFET are conducted to decrease the contact resistance value (Rc) and junction resistance value (Rj) such that the conducting resistance value (Ron) can be greatly decreased and the operating temperature can be greatly reduced. Additionally, since the junction region below the source metal layer is the PN heavily doped layer which is at an equivalent potential, most of the reverse leakage current flows through P layer to the source. Because this layer is heavily doped, voltage drop is not easily generated and the snap back phenomenon of reverse leakage current is not easily occurred. Furthermore, it is capable of raising the capability of anti-avalanche breakdown current so as to protect devices on the circuit under different kinds of instable variations of transient power source.
Patent TW-466556-B (TW)
Title: Method and device for arraying substrates and processing apparatus thereof
Inventor: TAKAGUCHI REI
IPC: H01L21/677
Filed: 2000-08-25
Granted: 2001-12-01
Abstract: A method and device for arraying substrates and a small-size processing apparatus thereof include a process of removing 26 wafers (W) with an equal spacing (L) from one carrier (C) and, during the process of removing 26 wafers (W) with an equal spacing from another carrier (C), interposing each of the 26 wafers (W) removed from said another carrier (C) with each of the 26 wafers (W) removed from said one carrier (C) so as to constitute a process of arraying the 52 wafers (W) into a wafer group 100 having a spacing L/2 that is substantially half of the equal spacing (L), thereby forming a substrate group in a stable manner within a short time.
Patent TW-476131-B (TW)
Title: Methods of pre-cleaning dielectric layers of substrates
Inventor: COHEN BARNEY M
IPC: H01L21/3205
Filed: 2000-09-15
Granted: 2002-02-11
Abstract: The present invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layer are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture. The invention also provides cleaning the patterned dielectric layer in a processing chamber with a first plasma consisting essentially of argon, wherein the first plasma is generated by supplying power to a coil surrounding the processing chamber and supplying bias to a substrate support member supporting the substrate, cleaning the patterned dielectric layer in the processing chamber with a second plasma consisting essentially of hydrogen and helium, wherein the second plasma is generated by increasing the supply of power to the coil surrounding the processing chamber and reducing the supply of bias to the substrate support member supporting the substrate, depositing a barrier layer on the patterned dielectric layer after exposing the dielectric layer to the first plasma and the second plasma, and depositing a metal on the barrier layer. Furthermore, the sequential plasma treatments can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, etch chambers, and other plasma processing chambers. The pre-clean process can also repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.
Patent TW-494300-B (TW)
Title: Methods for renaming stack references in a computer processing system
Inventor: GUSHUVINDO MICHAEL K
IPC: G06F9/38
Filed: 2000-10-13
Granted: 2002-07-11
Abstract: According to one aspect of the invention, there is provided a method for renaming memory references to stack locations in a computer processing system. The method includes the steps of detecting stack references that use architecturally defined stack access methods, and replacing the stack references with references to processor-internal registers. The architecturally defined stack access methods include memory accesses that use one of a stack pointer, a frame pointer, and an argument pointer. Moreover, the architecturally defined stack access methods include push, pop, and other stack manipulation operations.
Patent TW-483003-B (TW)
Title: Multi-state nonvolatile semiconductor memory device which is capable of regularly maintaining a margin between threshold voltage distributions
Inventor: KIM DONG-HWAN
IPC: G11C11/56
Filed: 2000-10-16
Granted: 2002-04-11
Abstract: A nonvolatile semiconductor memory device of the present invention has an array that includes a bit line, a plurality of word lines arranged perpendicularly to the bit line and a plurality of memory cells each arranged at intersections of the bit line and the word lines. In the nonvolatile semiconductor memory device is further provided a storage circuit and a program data judging circuit. The storage circuit has at least two latches each of which is connected to a corresponding input/output line and latches data. The program data judging circuit judges whether logic states of data latched in the latches indicate a programming or a program-inhibition of a selected memory cell, and sets the bit line to a program voltage or a program inhibition voltage according to a judgment result.
Patent TW-561141-B (TW)
Title: Compounds for the treatment or prophylaxis of disorders mediated by s-CD23, the preparation and the pharmaceutical composition thereof
Inventor: FALLER ANDREW
IPC: A61K31/16
Filed: 2000-10-26
Granted: 2003-11-11
Abstract: A compound of formula (I), wherein: R is isopropyl; n is 0; R1 is naphthylmethyl; R2 is t-butyl; and R3 is methyl; is useful in the treatment of disorders mediated by s-CD23.
Patent TW-521036-B (TW)
Title: Method and apparatus for manufacturing film with conductive sheet, for touch-panel, and film manufactured thereby
Inventor: MURAOKA TORU
IPC: B05D7/04
Filed: 2001-02-02
Granted: 2003-02-21
Abstract: A tensile force is applied to at least a surface of a film to which a conductive material is applied within an elastic limit by a tensile force applying means, the conductive material is applied to a first surface of the film by a coating means in a tensioned state, and thereafter the tensile force is released by a tensile force releasing means to form the film having a conductive sheet for a touch-panel. Preferably, the tensile force applying means is a barrel-shaped roller.
Patent TW-I235069-B (TW)
Title: Production process for polymeric micelle charged therein with drug and polymeric micelle composition
Inventor: YOKOYAMA MASAYUKI
IPC: A61K31/704
Filed: 2001-02-08
Granted: 2005-07-01
Abstract: Provided are a production process for a polymeric micelle which is stable and has a high drug content and a composition containing such polymeric micelle. Disclosed are a production process for a polymeric micelle, comprising the steps of dissolving a drug and a specific copolymer in a water non-miscible organic solvent to prepare a solution, mixing the resulting solution with water to form an O/W type emulsion and then slowly volatilizing the organic solvent from the solution, and a polymeric micelle composition charged therein with a water-scarcely soluble drug, which can be obtained by the above production process.
Patent TW-I254793-B (TW)
Title: Method and apparatus for inspection
Inventor: FUJII TATSUHISA
IPC: G01R31/302
Filed: 2001-03-20
Granted: 2006-05-11
Abstract: The present invention provides an inspection apparatus and method capable of intuitively obtaining inspection results of circuit wirings. An inspection system 20 comprises a sensor chip 1 including plural sensor elements, a computer 21, probes 22 for supplying an inspection signal to circuit wirings 101, and a selector 23 for switching the supply of the inspection signal to the probes 22. The computer 21 receives the detected signals from the sensor chip 1, and generates an image data to display an image of the circuit wirings as an inspection subject on a display 21a. This make it possible to check the shape of the specific circuit wiring and to detect defects such as disconnection, short-circuit, and chipping in the circuit wiring 101 based on the generated image data and the design image data representing the design circuit wiring.
Patent TW-517448-B (TW)
Title: High-frequency crystal oscillator
Inventor: KANAZAWA NOBUYUKI
IPC: H03B5/36
Filed: 2001-05-17
Granted: 2003-01-11
Abstract: A high-frequency crystal oscillator capable of outputting a signal at a frequency, for example, higher than 500 MHz without using a multiplication amplifier. The high-frequency crystal oscillator comprises a voltage controlled Colpitts oscillation circuit operating at the fundamental frequency of a quartz-crystal element, means for increasing the level of harmonic component in an output from the Colpitts oscillation circuit, an SAW (Surface Acoustic Wave) filter for selecting a component of a predetermined order of the harmonic component, and a broadband amplifier for amplifying the component selected by the SAW filter. The means for increasing the levels of harmonic component is, for example, a resistor for setting the operating point of a transistor in the oscillation circuit such that an output signal is distorted.
Patent TW-534881-B (TW)
Title: Gas generator for safety airbag and safety airbag apparatus
Inventor: KATSUDA NOBUYUKI
IPC: B60R21/26
Filed: 2001-06-08
Granted: 2003-06-01
Abstract: A gas generator is provided for an improvement of an activated feature in a gas generator for safety airbag. A section intersecting a flame jetting direction, which is activated by an ignition device containing an inter-cylindrical member, and a porous cylindrical shaped member formed by an anti-flame annular section are provided in a housing of the gas generator. Furthermore, a multi-stage gas generator is provided for eliminating a connecting error between a plurality of ignitions 8 and an output section 7 of an ignition signal output means 2 contained in the gas generator 1. The structure of the gas generator includes the plurality of said ignitions 8, a connector 10 disposed to leads 9 of the ignition signal output means for said ignitions for connecting the ignition signal output means with said ignitions 8, and a delimiter 17 specified for a combination of a multi-stage airbag apparatus.
Patent TW-523644-B (TW)
Title: Program code write device of micro-controller and programmable memory and method thereof
Inventor: WU JR-YUAN
IPC: G05B19/00
Filed: 2001-08-16
Granted: 2003-03-11
Abstract: The present invention relates to a program code write device of micro-controller and programmable memory and a method thereof. The program code write device of micro-controller includes an input/output (I/O) unit, a data download circuit, a memory, and a core unit. When reading/writing the main programmable read-only memory (PROM), control programs are stored into the memory through the I/O unit and executed by way of the core unit to read the program code of the host before writing the program code into the main PROM. The program code write method of micro-controller includes the following steps: (1) provide a reset signal and, based on which, enter the reset condition. (2) The I/O unit receives the control program and outputs it to the memory. (3) The core unit reads and executes the control program of the memory before writing the program code into the main PROM.