baber/WOPTO huggingface dataset:
Patent TW-316935-B (TW)
IPC: D05B23/00
Filed: 1994-12-23
Granted: 1997-10-01
Abstract: In rotary hook assemblies (101) and oscillating shuttle hook assemblies (321), a bearing rib (108,325) on a bobbin case basket (106, 311) or at least its surface layer (217, 324) is composed of a synthetic resin such as a liquid crystal polymer, which has such properties that the amount of the rotating frictional force of the slide contact portion, between the surface layer (217, 324) of the bearing rib (108, 325) and the inside circumference layer (326) of the groove shaped bearing raceway (128, 322) where the bearing rib (108, 325) is fitted, is lower in cases without industrial sewing machine oil than in other cases with the industrial sewing machine oil. By this construction, the hook assembly (101, 321) which has the good durability of the rotating portion without any hook lubrication is realized. Accordingly, the oil stains of threads and sewing materials by hook lubricant is disappeared and the sewing quality enhances. <IMAGE>
Patent TW-294730-B (TW)
IPC: B29C48/32
Filed: 1995-02-07
Granted: 1997-01-01
Abstract: Method for the preparation of cellulose sheet by extrusion of a heated solution of cellulose in a tertiary amine-oxide, which method includes using an extrusion die with an extrusion orifice, characterised in that, immediately below the extrusion orifice there is provided an inlet for cooling gas to cool the extruded sheet. The method according to the invention is especially suitable for the preparation of cellulose tubular films.
Patent TW-282409-B (TW)
Title: Method of preparing air-permeable, flexible sporting goods material
Inventor: WANG SHIUH-BANG
IPC: A63B71/08
Filed: 1995-09-12
Granted: 1996-08-01
Abstract: A method of preparing air-permeable flexible sporting goods material which uses PPG, DTI, Silcon, Ammonium Zincate, Diammonium Ethylene, color pastes is characterized by: (1) flow of the complete processing; (2) adding different materials according to the necessities of different properties of materials to mix them at different ratios; (3) adding blowing agent to form foams of thicker products; (4) cutting at water level foam line and forming the cutting line; (5) raising and continuing the high temperature and pressure; (6) maintaining the temperature between 100-200 deg.C; (7) maintaining the pressure between 5-200 kg/cm; (8) increasing the time in direct proportion to the thickness of shaped articles; (9) forming the shaped articles (21); (10) pasting various plain elements to form various semifinished products (30); (11) further processing to produce the final products.
Patent TW-460428-B (TW)
Title: Ceramic slip composition and method for making the same
Inventor: ADAIR JAMES H
IPC: C04B35/634
Filed: 1995-09-15
Granted: 2001-10-21
Abstract: A uniform suspension of ceramic powder and method for making the same. The suspension is prepared by mixing finely divided ceramic powder in an aqueous carrier fluid, combining with a dispersing agent, and alternatively, an organic binder when forming a slip. The ceramic powder has an average particle size of about 0.5 micron or less and is present in the suspension in a loading of up to 30% by volume of the total solids in suspension. A passivating agent is present in the carrier fluid in an amount of 0.5 to 5% by weight of the ceramic powder present for suspension and slip respectively. After the addition of a dispersant, the suspension has a Bingham yield point of less than 230 dynes/cm<SP>2</SP> and an apparent viscosity of less than 3000 cps. A green layer produced from the slip exhibits a pore size of less than 0.5 micron.
Patent TW-282582-B (TW)
Title: A manufacturing method of chimney type ejector field emission component
Inventor: JENG HUANG-JONG
IPC: H01L27/15
Filed: 1995-12-22
Granted: 1996-08-01
Abstract: A manufacturing method of chimney type ejector made by diodes and the steps includes; 1. Developing a layer of silicon dioxide on the silicon base board. 2. Forming a silicon dioxide cover mask by the optical carving and etching method. 3. Forming a narrow neck silicon cone by taking the dry or wet type, isotropic or anisotropy etching method and connecting the silicon dioxide cover mask on the top. 4. Using the isotropic physical vapor deposition skill to complete the sputtering process. 5. Etching the silicon base board of the arrow neck part which supports the cover mask of the silicon dioxide, because the solution contains some element can etch the silicon dioxide, so first it will etch the silicon dioxide which is not covered by low power function material, and because the efficiency of etching the silicon base board is lower than the efficiency of silicon dioxide, so the solution will contact the silicon base board instantly after the silicon dioxide base board was etched and formed a gap on it, at the same time, the part which support the cover mask will be etched and then lift-off and expose out the chimney type ejector and forming the field ejecting component.
Patent TW-469376-B (TW)
Title: A method and apparatus for modifying data in a multi-processor data processing system
Inventor: CHEONG HOICHI
IPC: G06F12/0817
Filed: 1996-03-04
Granted: 2001-12-21
Abstract: A method and system for increasing the effective use of the bandwidth of a cross bar switch in a symmetrical multi-processor system (SMP). The SMP includes a plurality of processors each having a cache, at least one memory unit, and a cross bar switch connecting each one of the processors to the at least one memory unit. The at least one memory unit includes an intelligent memory directory unit which maintains the status of cache lines storing the same data, e.g. exclusive or shared. The use of the intelligent memory directory unit allows any one of the processors to use a single command for issuing either a shared store or a store miss, with the memory directory unit determining what the command was intended to perform and taking the appropriate action. By maintaining the status of the cache lines the memory directory unit eliminates the pinging associated with a processor issuing a shared store request only to have to reissue a store miss command.
Patent TW-289823-B (TW)
Title: Method of recomposing IC memory array defect sector and structur thereof
Inventor: LIOU KANG-MAW
IPC: G11C16/06
Filed: 1996-04-08
Granted: 1996-11-01
Abstract: A method of recomposing IC memory array defect sector, which consists of several sectors selected from N bit of corresponding array by address decoder, comprises the steps of: (1) detecting if there is defect sector in array; (2) by arranging address decoder disabling defect sector, and segmenting it from the array to avoid accessing defect sector, and other sectors in array still remains their sequence addressing.
Patent TW-334379-B (TW)
Title: Compression mechanism for grinding machine of semiconductor substrate
Inventor: NISHIO MIKIO
IPC: B24B9/02
Filed: 1996-06-29
Granted: 1998-06-21
Abstract: A kind of compression mechanism for grinding machine of semiconductor substrate which is used on positioning pad for proceeding the plane movement . There is flexible grinding pad installed on flat plane of the positioning pad which is used to hold the semiconductor substrate to be ground. There is a holding mechanism for rotating and pressing the substrate and being kept within the first portion of circle of grinding pad; abrasive supplying mechanism used to supply the abrasive onto the grinding pad. The feature is composed of the second portion for pressing the grinding pad so that the pad compressing mechanism pressed the grinding pad to flexible deformation.
Patent TW-299453-B (TW)
Title: The dust processor
Inventor: HU JWU-LIN
IPC: B01D5/00
Filed: 1996-07-29
Granted: 1997-03-01
Abstract: A dust processor which is used in CVD process of IC and connected to the gas-exhausting unit of a heater. The exhausting unit receives the gas-dust from heater. The processor received the cooling water and interface active agent from outer system, and includes: A high-pressure water pump, a 1st and 2nd switch, 4 pipes from 1st to fourth, and multiple spraying heads; A controlling unit is coupled with water pump, 1st & 2nd switch. This unit has a condensing and a washing mode to control the switches on and off.
Patent TW-337563-B (TW)
Title: Optimizing performance in a packet slot priority packet transport system
Inventor: ALFONSE ANTHONY ACAMPORA
IPC: G06F13/00
Filed: 1996-08-15
Granted: 1998-08-01
Abstract: A method disclosed for optimizing the operation of a packet transport system generating a packet stream carrying a plurality of component signals in the following steps: first the packet stream is partitioned into successive groups, with each group containing a predetermined number of packet slots, maintenance of a plurality of lists, one associated with each packet slot in a group; each list including a number of entry points, including a component signal data; a packet stream is generated in response to entries in the list; revision of a number of lists based on a predetermined parameter.
Patent TW-311244-B (TW)
Title: Method of isolation process
Inventor: LIN JIUNN-SHYAN
IPC: H01L21/31
Filed: 1996-08-28
Granted: 1997-07-21
Abstract: A method of isolation process comprises of: (1) supplying one silicon substrate, on which there is one formed insulator, which patterns at least one window as well prearranged region; (2) sensitively forming one impurity in-situ doped epitaxy silicon layer in the well prearranged region, constituting one well, and with insulator located by two sides of the well region as isolation region.
Patent TW-505800-B (TW)
Title: Liquid crystal display panel and its manufacture
Inventor: INOUE HIROYASU
IPC: G02F1/13
Filed: 1996-09-18
Granted: 2002-10-11
Abstract: First and second substrates are disposed facing each other. Drive wiring lines including signal and control lines are formed on the first substrate on the side facing the second substrate. A pixel electrode is formed on the first substrate in the pixel region and on the side facing the second substrate. A switching element is provided for each pixel electrode. A common electrode is formed on the second substrate on the side facing the first substrate. A liquid crystal layer is sandwiched between the first and second substrates. An alignment film is formed on one of the first and second substrates on the side facing the other substrate. A pre-tilt angle is imparted so that the ends of each liquid crystal molecule in the central region of the liquid crystal layer near the drive wiring line tilt away from the drive wiring line when a voltage is applied across each pixel electrode and the common electrode.
Patent TW-348142-B (TW)
Title: Turnbuckle
Inventor: PAR DEHLIN
IPC: F16G11/12
Filed: 1996-10-03
Granted: 1998-12-21
Abstract: A turnbuckle comprising a first and a second fastening means, at least one of which is formed with threads, and a tightening device formed with through-holes at least one of which is formed with threads, in which the tightening device comprises a pair of cooperating tightening members in nesting relationship, that each tightening member comprises one outer end piece and one inner end piece, that the second inner end piece is formed with a threaded through-hole for screw engagement with the threaded portion of the first fastening means; which is characterized in that the tightening device is arranged to assume at least two different elongation conditions, whereby, in the shorter condition, the threaded portion of the first fastening means is in screw engagement with the threaded hole of the second inner end piece and, in the longer condition, the last screw engagement is interrupted and the tightening members displaced in the longitudinal direction of the tightening device, thereby causing the inner faces of the two inner end pieces into abutting relationship.
Patent TW-349945-B (TW)
Title: Substituted benzenedicarboxylic acid diguanides, process for their preparation, their use as a medicament or diagnostic
Inventor: KLEEMANN HEINZ-WERNER DR
IPC: A61P1/16
Filed: 1996-11-18
Granted: 1999-01-11
Abstract: A sort of benzenedicarboxylic acid diguanides or the pharmaceutically acceptable salts; where R(1) is hydrogen; F(2) is -CO-N = C(NH2)2; R(3) is hydrogen; F(4) alkyl having 1, 2, 3, 4, 5, 6, 7 or 8 carbon atoms, -(C3-C8)- naphthene or phenyl, being is substituted by 2 or 3 radical groups selected from halogen and CF3 and R(5) is hydrogen.
Patent TW-332291-B (TW)
Title: Semiconductor memory, device for driving data signal of circuit to wanted level, circuit for driving first and second signal to wanted level, DRAM structure, method for driving data signal to wanted level, method for driving first and second signal to wa
Inventor: GEORGE REX PLUNKETT
IPC: G11C11/401
Filed: 1997-01-14
Granted: 1998-05-21
Abstract: A semiconductor memory have (1) Bit line pair; (2) A plurality of word lines; (3) A plurality of dynamic cells, each is combined with one of bit lines constituting said bit line pair and one of said a plurality of word lines; (4) Sense amplifier including a pair of PMOS transistors and a pair of NMOS transistors, in which the PMOS transistor pair and the NMOS transistor pair have commonly connected source respectively, and drain respectively connected to said bit line pair, and gate cross-connected to the drain; (5) First power terminal; (6) Second power terminal; (7) First switch transistor connected between said first power terminal and said source of said PMOS transistor; (8) Second switch transistor connected between said second power terminal and said source of said PMOS transistor; (9) Voltage generator for providing first voltage lower than second voltage provided by said second power terminal; And comprises the features: (1) Said sense amplifier for providing complementary signals having H-side voltage and L-side voltage to said bit line pair based on relating information of memory cell selected by said a plurality of dynamic memory; (2) During first period, in response to enable state of said second switch transistor, the said H-side voltage rises to above said first voltage; (3) During second period after said first period, in response to enable state of said first switch transistor, the said H-side voltage falls, thereby forces said H-side voltage to be set to said first voltage.
Patent TW-331059-B (TW)
Title: Digital cordless telephone system
Inventor: SEUNG-BUM LEE
IPC: H04M1/253
Filed: 1997-05-23
Granted: 1998-05-01
Abstract: A digital cordless telephone system(CT-2) having a plurality of subscriber cordless handsets(HS) and a subscriber manager for performing HS authentication comprises: (1) A plurality of base station(BS), each BS being coupled with one or more BSs by radio channels for controlling radio link; (2) A system connector coupled with each BS, coupled with a public switched telephone network(PSTN) for switching and concentrating channels between each of the BSs and the PSTN, and coupled with a public switched data network(PSDN) for communicating with the subscriber manager.
Patent TW-398114-B (TW)
Title: Electrical control for a sewing drive
Inventor: HOSAGASI SEVKI
IPC: D05B69/18
Filed: 1997-06-11
Granted: 2000-07-11
Abstract: The invention relates to an electrical control for sewing drive with a line connection for an alternating voltage, with a rectifier circuit to which an intermediate circuit voltage is applied and with a main drive supplied by said intermediate circuit voltage, as well as adjusting elements are connected by control elements to the microprocessor and thereby to the intermediate circuit voltage.
Patent TW-347610-B (TW)
Title: Voltage/current converting circuit
Inventor: HONMA TOMOYUKI
IPC: H03F3/00
Filed: 1997-06-19
Granted: 1998-12-11
Abstract: A voltage-to-current converter characterized in comprising: a first transistor of an emitter follower type having a base connected to an input terminal; a second transistor having a conductivity opposite to a conductivity of the first transistor, and including a base connected to an emitter of the first transistor, an emitter grounded through a first resistor, and a collector connected to an output terminal; a third transistor having characteristics which are the same as characteristics of the second transistor, and including a base connected to the emitter of the first transistor, and an emitter grounded through a second resistor; and a current mirror circuit, connected to a collector of the third transistor and the emitter of the first transistor, for supplying a current identical to a collector current of the second transistor to the emitter of the first transistor.
Patent TW-394837-B (TW)
Title: High-frequency heating cooker
Inventor: OGASAWARA TOSHIO
IPC: F24C7/02
Filed: 1997-10-09
Granted: 2000-06-21
Abstract: This invention aims to provide a high-frequency heating cooker that does not need high cost micro-computers. It is also an improvement in both the availability and operational ability of conventional mechanical high-frequency heating cookers. This high-frequency heating cooker includes a microwave oscillator 16 for heating an article in a heating chamber 1. A timer contact 14a is switched on after cooking time is set. A first power supply circuit 20 and a second power supply 25 are used in order to apply the commercial power when the timer contact 14a is plugged to generate a predetermined DC voltage. A control unit 40 has a sensor consisting of a potential setting unit 41, which has a gas sensor 42. An inverse holding unit 43 has a pair of transistors Q5, Q6, and an inverse holding potential setting unit 44 to form a voltage division circuit. It is based on switching on/off operation of the transistors Q5, Q6. Also a switch 50 controls the power supplied to the microwave oscillator 16 depending on the controlled condition of the control unit 40 with a sensor.
Patent TW-354417-B (TW)
Title: A method for forming a planarized dielectric layer
Inventor: JANG DING-JANG
IPC: H01L21/314
Filed: 1997-10-18
Granted: 1999-03-11
Abstract: A method for forming a planarized dielectric layer formed on an electronic substrate, comprising: a. coating a HO2SiCH4 on the electronic substrate; b. heating to a first temperature, so hat the HO2SiCH4 formed as a solid object; c. heating continuously to a second temperature, so that the solid object melt; d. further heating to a third temperature, so that the solid object planarized to form a layer of oxide; e. in the environment of inertial gas, further heating to a fourth temperature, so that the oxide layer forms as a dielectric layer, and f. planting hydrogen ion and processing the dielectric layer so as to form with a planarized dielectric layer.
Patent TW-367377-B (TW)
Title: Device for selecting weft threads for a weaving loom
Inventor: HERBEPIN PASCAL
IPC: D03D47/38
Filed: 1997-10-27
Granted: 1999-08-21
Abstract: This device includes needles each having an eye into which a weft thread passes. The needles are arranged parallel to one another, all the needle eyes being situated on one and the same side. Means are provided for displacing one needle longitudinally in relation to the others between an inactive position and a selection position. The device includes a weft-thread guide which is arranged between the inactive position and the position for the selection of the needles and which causes a weft thread to converge towards a predetermined position when a needle passes from the inactive position towards the selection position.
Patent TW-364157-B (TW)
Title: Method of manufacturing an EB mask for electron beam image drawing and device for manufacturing an EB mask
Inventor: TAMURA TAKAHISA
IPC: H01L21/027
Filed: 1998-01-16
Granted: 1999-07-11
Abstract: The present invention consists in a method of creating an EB mask for electron beam image drawing, comprising: a step of extracting patterns for forming on an EB mask from design data stored in means for storage; a step of calculating an aperture area of an aperture section requested in an EB mask, using the design data contained in the extracted cell; a step of generating cell data for aperture creation using the value of this aperture area; and a step of forming a basic aperture pattern in an EB mask using this cell data for aperture creation.
Patent TW-358141-B (TW)
Title: Drill bit for horizontal directional drilling of rock formations
Inventor: COX DAVID M
IPC: E21B10/60
Filed: 1998-02-04
Granted: 1999-05-11
Abstract: A sort of drill bit for horizontal directional drilling of rock formation, having: a drill body, connected to one end of a probe casing; forming an included angle between the drill bit and the probe casing; and the drill bit being disposed on the terminal screw bolt facing forward and having a number of physical faces for extension from one front end.
Patent TW-483866-B (TW)
Title: Method of winding an advancing yarn and takeup machine for carrying out such method
Inventor: WESTRICH HERMANN
IPC: B65H54/52
Filed: 1998-03-13
Granted: 2002-04-21
Abstract: The invention relates to a method and a takeup machine for winding a continuously advancing yarn to a package. In this process, the package is formed on a driven winding spindle that is mounted in cantilever fashion to a movable support. A contact roll rests with a contact force against the circumference of the package. During the winding cycle, the center distance between the package and the contact roll is controlled by an evading movement of the contact roll or by a constant evading movement of the winding spindle as a function of the increasing package diameter. In accordance with the invention, the constant evading movement of the winding spindle occurs at a variable speed. The speed is predetermined for the control as a function of the diameter increase of the package.
Patent TW-399336-B (TW)
Title: Semiconductor device and its manufacturing method
Inventor: MAKI YUKIO
IPC: H01L21/331
Filed: 1998-04-28
Granted: 2000-07-21
Abstract: The semiconductor component has first conductivity semiconductor substrate from which the surface is formed the second conductivity collector region down to the first depth. From the surface of the substrate (1) is formed a base region (6) down to second depth, smaller than the first one for the collector region (3). An emitter region (9) has two doping layers (9a,b). The first layer (9a) of second conductivity and doping concentration max. is formed at a third depth, smaller than the second one. The second layer (9b) has a doping concentration max. of second conductivity at a position between the second and third depth and is so formed that it is surrounded by the first doping layer.
Patent TW-406470-B (TW)
Title: The apparatus of controlling the Hall effect switch
Inventor: GUO GUEI-WEI
IPC: H03K17/95
Filed: 1998-05-04
Granted: 2000-09-21
Abstract: An apparatus for controlling the Hall effect switch, which is composed by four bi-polar transistors and one current source. Two sets of bi-polar transistor in symmetry are used to improve the condition of poor symmetry, and lower the working current and start-up voltage under the combination of less devices so that the electricity-consumption is largely reduced. A current source is designed to regulate the degree of sensitivity. Besides, design a double output connector which could further reduce the number of transistor to lower the power consumption largely.