Patent TW-201523689-A (TW)
Title: Plasma processing apparatus for vapor phase etching and cleaning
Inventor: KIM HO-SIK
IPC: H01J37/32
Filed: 2014-08-26
Abstract: Disclosed is a plasma processing apparatus for vapor phase etching and cleaning, including a reactor body configured to process a substrate to be processed; a direct plasma generation area in the reactor body, into which a process gas is flowed and in which plasma is directly induced to disassociate the process gas; a plasma induction assembly configured to induce plasma in the direct plasma generation area; a diffuser plate configured to uniformly diffuse the flowed process gas in the direct plasma generation area; a mixing area in the reactor body in which the process gas flowed from the direct plasma generation area is mixed with vaporized gas flowed from the outside of the reactor body to form reactive species; a first gas distribution baffle, which is disposed between the direct plasma generation area and the mixing area and has a plurality of first through holes; a substrate processing area in the reactor body in which the substrate to be processed is processed by reactive species flowed from the mixing area; and a second gas distribution baffle, which is disposed between the mixing area and the substrate processing area and has a plurality of second through holes that are perforated, through which the reactive species are flowed into the substrate processing area. The plasma processing apparatus for vapor phase etching and cleaning of the present invention may process the substrate to be processed with reactive species generated, without plasma damage. Further, the present invention has a merit that there is no residual product when cleaning the substrate to be processed and its selectivity is high. Further, the surface of the substrate to be processed may be uniformly cleaned by uniformly supplying the vaporized gas for a vapor phase cleaning on the substrate to be processed. The temperature of vaporized gas may be controlled using a heating wire disposed in the gas distribution baffle to inject the vaporized gas. Further, the substrate to be processed may be processed even in micro-pattern process since there is no plasma damage. Further, plasma may be uniformly generated since process gas diffuses into the chamber uniformly through the diffuser plate. Since it may be possible to uniformly generate large size plasma, the substrate may be uniformly processed even in case of processing large size substrate as well as a small substrate. Further, it may be possible to control diffusion level of the process gas by controlling a mounting gap of the diffuser plates. Further, lifetime of the process gas increases so that gas decomposition rate increases and etch amount increases. Further, since it is possible to select electrostatic method or vacuum method to support the substrate depending on the substrate processing process with the hybrid chuck, substrate fixing method may be selected depending on process atmosphere and environment. Further, in case that one method is not available, it is possible to select the other method to fix the substrate, so that it is not needed to stop the substrate processing process or substitute the chuck in case of breakdown. Further, there are effects that productivity increases and costs of repair and production are reduced.