baber/WOPTO huggingface dataset:
Patent JP-S61288771-A (JP)
Title: Booster circuit
Inventor: SAKAGAMI HIRONOBU
IPC: H02M3/155
Filed: 1985-06-13
Abstract: PURPOSE:To prevent a booster circuit from erroneously operating by providing a PNP type transistor between the booster circuit and a stabilized controller to prevent the control output side of the controller from coming to a negative potential. CONSTITUTION:The output voltage of a main booster circuit 2 is stabilized to a constant voltage by a stabilized controller 3, and supplied as a power to a load 4. A PNP type transistor Q2 is provided to feedback the output of the controller 3 to the base of a switching transistor Q1 of the booster circuit 2. Since the P-N junction of the base and the emitter of the transistor Q2 is reversely biased even if the control terminal of the transistor Q1 comes to a negative potential by the transforming action at an oscillation time, the interior of the controller 3 does not come to a negative potential.
Patent JP-S617940-A (JP)
Title: Microprogram control device
Inventor: SAKAMOTO AKIO
IPC: G06F9/22
Filed: 1984-06-22
Abstract: PURPOSE:To eliminate interruption waiting, and to make a device inexpensive and have high performance by saving the contents of a register group by a micro-instruction, also providing an FF for showing a fact that they are saved, and suppressing the save of contents of a register of the time of interruption. CONSTITUTION:When a register saving micro-instruction is decoded by a micro-instruction execution control part 3, the control part 3 sets a saving FF8 in a register group 4. In such a state, a save control part 5 is driven and the contents of a micro-instruction address register 1 and the register group 4 are stored in a save register group 6. When the FF8 is set, a signal on an invertor output signal line 23 is inputted to an AND circuit 9, therefore, a signal to be outputted to an interruption stack signal line 14 from an interruption controlling circuit 7 is suppressed by the circuit 9 and not outputted to an interruption stack signal line 13, and it is not saved to the register group 6. When the operation of the time when the interruption processing is ended is executed, it is returned to the subsequent processing because the saved contents are the contents of the time point when the register saving micro-instruction is executed.
Patent JP-H08282473-A (JP)
Title: Distance change absorbing device between supporting cable and towing cable
Inventor: MORITA SHINYA
IPC: B61B12/02
Filed: 1995-04-17
Abstract: PURPOSE: To prevent floating of a runner in a carrier running part by mounting the runner in the carrier running part through an eccentric wheel, and absorbing a distance change between a supporting cable and towing cable resulting from change in the load on carriers, which travel along the track of a cableway, in a position on the track where the gradient varies. CONSTITUTION: In a position on the track where the gradient varies, a towing cable 3 in case the load on carrier 8 is heavy varies into the condition shown by the assumed line P from the condition shown by solid line Q corresponding to a light load operation. Associate with the change, the running part 5 for carriers 8 is willing to float with flotation resulting from a tension of the towing cable 3. Therefore, a runner 6 is borne in the running part 5 by an eccentric wheel 7. Thereby a distance change between the supporting cable 1 and towing cable 3 is absorbed by the vertical motion of the runner 6, and the runner 6 is always contacted with and held by the supporting cable 1 or rail 2, and risk of derailing is eliminated to lead to establishment of stable running.
Patent JP-H08284795-A (JP)
Title: Accumulator device utilizing elasticity
Inventor: YAMASHITA KEN
IPC: F03G1/04
Filed: 1995-04-17
Abstract: PURPOSE: To accumulate dynamic energy, which becomes thermal energy and is discharged to the air at the time of braking a running vehicle, in a condition of thermal energy with high efficiency so as to be used for running, and reduce vehicle weight by reducing loading of batteries in the case of an electrically- driven vehicle. CONSTITUTION: Electromagnetic clutch brakes 2a, 2b are connected to spur gears 6a, 6b disposed in a satellite form around a spur gear 6c fixed onto an input/output shaft 1 to accumulate rotational force by spur gears 7a, 7b through elastic elements 3a, 3b placed in cases 4a, 4b, and measure the accumulating condition of energy with a torque sensor 5 for input and output control.
Patent JP-S61287107-A (JP)
Title: Method for molding permanent magnet alloy powder
Inventor: KOBAYASHI AKIO
IPC: C22C33/02
Filed: 1985-06-13
Abstract: PURPOSE:To reduce the content of oxygen as well as to obtain the molding method for R-B-Fe permanent magnet alloy powder with which excellent magnetic characteristics can be obtained by a method wherein said permanent magnet alloy powder is molded in Ar gas or N2 gas or the mixture of both gas. CONSTITUTION:R-B-Fe permanent magnet alloy consists of the essential ingredients of Fe of 40-90atom%, B of 2-28% and R (rare-earth metal containing Y) of 8-30%, and said alloy contains one or more kinds of specific element of the prescribed percentage or less. Molding material having the aver age grain diameter of 3.3mum is formed using a jaw crusher, a Plauson and a jet mill, said material is molded in a magnetic field (15KOe) at the molding pressure of 2.8t/cm<2>, and a molded body is formed. The alloy powder is molded in the atmosphere of Ar gas or N2 gas or the mixture of both of them.
Patent JP-S6021522-A (JP)
Title: Formation of resist pattern
Inventor: KIRITA KEI
IPC: H01L21/027
Filed: 1983-07-15
Abstract: PURPOSE:To form efficiently and quickly a high precision resist pattern by executing at least either one of the the baking and cooling of resist at a pressure which is lower than the atmospheric pressure. CONSTITUTION:A resist film is applied on a substrate to be processed (step 1) and such substrate with resist film is housed in a reduced pressure vessel at a pressure lower than the atmospheric pressure, it is then subjected to the resist baking for the specified period at the specified temperature Tb (step 2). Next, the resist film is uniformly cooled for the entire part until the final cooling temperature Tc while the cooling period or cooling speed are controlled in a reduced pressure vessel (step 3). Thereafter, this resist is irradiated selectively with an electromagnetic wave in the specified wavelength or particle beam having the specified energy (step 4). Such irradiated area is developed and rinsed (step 5). Thereby, a resist pattern can be formed. Where the baking is carried out under a reduced pressure condition, vaporization of resist solvent can be accelerated and the time required for resist baking can be curtailed and where the resist is cooled under the reduced pressure condition, dispersion of cooling speed resulting from natural circulation of ambient can be reduced.
Patent JP-H07336580-A (JP)
Title: Image pickup device
Inventor: NOBUOKA KOSUKE
IPC: H04N5/228
Filed: 1994-06-10
Abstract: PURPOSE:To allow a 3-board video camera to generate selectively a video signal whose aspect ratio is 9:16 and 3:4 while utilizing effectively its memory. CONSTITUTION:Three CCDs 1 whose aspect ratio is 9:16 are used and a 1st mode (aspect ratio is 9:16) or a 2nd mode (aspect ratio is 3:4) is set selectively. In the 1st mode, switches 8, 9, 17 are thrown to the position 0, a switch 10 is open and a switch 11 is closed. In the 2nd mode, the switches are thrown to reverse position to above. In the 1st mode, an RGB signal from the CCD 1 is A/D-converted and the converted signal is stored in 1st and 2nd memories 5, 6. A DSP 7 uses the signal from the 1st and 2nd memories 5, 6 to generate a video signal whose aspect ratio is 9:16. In the 2nd mode, the DSP 7 uses the signal from the 1st memory 5 to generate a video signal whose aspect ratio is 3:4. In this case, the 2nd memory not used in the 2nd mode is used for other signal processing. Thus, the memories are used effectively.
Patent JP-H0425123-A (JP)
Title: Manufacture of semiconductor device
Inventor: INOUE MINORU
IPC: H01L21/28
Filed: 1990-05-21
Abstract: PURPOSE:To secure the specific resistance while enabling a high melting point metallic silicide layer to be formed even on a shallow diffused layer by a method wherein a high melting point metallic layer is formed by adding oxygen to at least either the metallic layer or the surface layer of a silicon region and then the silicon region is heated. CONSTITUTION:A high melting point metallic layer 2 is formed by containing oxygen at least in either one out of the metallic layer 2 or the surface layer of a silicon region 1 and then the silicon region 1 is heated at the temperature exceeding 700 deg.C making the metallic layer 2 and the surface layer of silicon region 1 react to each other to form a high melting point metallic silicide layer 3. That is, since the oxygen contained in the high melting point layer 2 restrains the reaction of the high melting point metal to the silicon when the silicon region 1 is heated at the temperature exceeding 700 deg.C, extremely thin high melting point metallic silicide 3 can be formed simultaneously avoiding the breakdown of various junctions. At this time, the increase in the specific resistance of the high melting point metallic silicide 3 due to silicon separating can be avoided by the residual oxygen in the high melting point metallic silicide layer 3. Through these procedures, the proper low specific resistance of the high melting point metallic silicide can be secured while enabling the high melting point metallic silicide layer 3 to be formed even on a shallow diffused layer without breading down the junctions.
Patent JP-S5653873-A (JP)
Title: Welding residual stress relieving method of conveyor pulley and its device
Inventor: NAKAMOTO TAKAYOSHI
IPC: B23K9/00
Filed: 1979-10-03
Abstract: PURPOSE: To relieve titled stress economically, easily and safely by repeatedly applying the external force close to the yield point of a barrel to cylindrical barrel required times from the outside surface of the barrel while measuring and controlling the distribution and change in the residual stress near the welding.  
     CONSTITUTION: The positions of pressing rings 15 are determined from the residual stress distribution near the weld zone of a conveyor pulley B measured by using contact type stress measuring devices of magnetostrictive type or the like. The positions of the rings 15 become the positions nearer to the center by a required length from the weld zone 4. Next, the pulley B is carried onto stationary rollers 12, 12', and while the pulley B is slowly rotated by driving receiving rollers 12 with a drive unit 16, the cylinders 17 of pressing devices 14 are pressurized to force down rollers 13, whereby the external force close to the yield point of a barrel 1 is exerted to the pulley B. After this, the rotation of the pulley B is once stopped and the residual stress distribution change and relieving degrees are measured with said measuring devices, thence the pressures of the cylinders 17 are regulated and the pulley B is again rotated while the external pressure is being exerted. The stress is relieved by repeating said work. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S5655532-A (JP)
Title: Manufacture of phosphorus-containing aluminum alloy for refining grain size of proeutectic si of hypereutectic a -si alloy and its using method
Inventor: TSUDA MASATOSHI
IPC: C22C1/02
Filed: 1979-10-05
Abstract: PURPOSE: To manufacture the titled superior Al alloy generating no smoke and gas in grain refining by scattering a flux composed of a mixture of molten (NaPO 3 ) 6  and Al 2 O 3  over the surface of molten pure Al or a molten Al-Si alloy and keeping them at a constant temp.  
     CONSTITUTION: (NaPO 3 ) 6  and Al 2 O 3  are mixed in a specified ratio and melted by heating to prepare a flux. This flux is spread over the surface of molten pure Al or a molten Al-Si alloy kept at 850W900°C, and they are kept at such a constant temp. for 30W90min. At this state they react with each other at the contact interface, and P in the flux diffuses and penetrates into Al. The molten flux on the molten metal surface is then removed, and the molten metal is cast in a metal mold to obtain an ingot of a P- contg. Al alloy refining the grain size of the proeutectic Si of a hypereutectic Al-Si alloy. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S62287522-A (JP)
Inventor: SADA TOSHIKATSU
IPC: H01R11/01
Filed: 1986-06-05
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H08302797-A (JP)
Title: Washing method for siphon jet type water closet
Inventor: HATTORI MOTOHIKO
IPC: F16K21/04
Filed: 1995-04-28
Abstract: PURPOSE: To promote efficiency when a water closet is washed to economize water consumption and, at the same time, to make it possible to miniaturize a washing water tank. CONSTITUTION: Washing water is flowed along the inside of a bowl 12 from a rim water channel 16 provided along the circumferential section of the upper end of the bowl 12, at the same time, in a washing method of a siphon jet type water closet jetting the jet water for siphon operation from a jet hole 32 opened toward a drainage trap section 20 of the water closet, the jet water is netted from the jet hole 32 at timing delayed by a specific time from the commencement of the flowout of washing water from the rim water channel 16 in a state to flow washing water from the rim water channel 16 while keeping washing water in constant flow substantially. Then, after the jet of the jet water is stopped, the flowout of washing water from the rim water channel 16 is stopped.
Patent JP-S5253878-A (JP)
Title: Process for preparing 2-alkoxy-3h-azepines
Inventor: MAZAKI MITSUO
IPC: C07D223/10
Filed: 1975-10-29
Abstract: PURPOSE: To prepare2-alkoxy-3H-azepines, which are useful as intermediates for blood sugar depressants, diuretics, antibacterial agents, etc., form easily available materials in high yields. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-S5831582-A (JP)
Title: Semiconductor integrated circuit device
Inventor: NANBU SHIYUUTAROU
IPC: H01L27/06
Filed: 1981-08-20
Abstract: PURPOSE:To obtain a preferable field effect transistor (FET) characteristics without deteriorating the characteristics of an active layer or the boundary between an active layer and a high resistance layer by forming the FET with an epitaxially grown GaAs single crystal by ion implanting a resistor and a capacitor. CONSTITUTION:The monolithic IC circuit of this embodiment is a negative feedback type amplifier using an FET, a GaAs single cyrstal is epitaxially grown with N type GaAs 2 on a semi-insulating substrate 1, and an N type  GaAs is further continuously grown. An N type GaAs layer is mesa etched,  thereby forming a mesa 3 for the FET and a mesa 42 for a feedback capacity.  Then, an Si is implanted as an N type impurity in an N type buffer layer, is  then annealed, thereby activating the implanted region 41 as a feedback resistor Rf. A reliable vapor epitaxial single crystal is used for the FET part required  for high frequency characteristics, and the ion implantation and the merits can  be utilized for the other passive circuit parts required for the reproducibility of the thickness of the active layer.
Patent JP-S6022319-A (JP)
Title: Semiconductor exposure apparatus
Inventor: ISOHATA JIYUNJI
IPC: H01L21/30
Filed: 1983-07-18
Abstract: PURPOSE:To eliminate the necessity to build a complicated mechanism into a wafer chuck by moving a mask or a reticle to focalize a blurred image caused by a wafer. CONSTITUTION:A wafer chuck 10 retaining wafer 9 is positioned. Next, a distance from a referential surface 7a to the upper surface of the wafer 9 is measured with each air macrometer 12. A servo valve 6 supplies some amount of pressure air to an air pressure working device 5 according to measurement value. A shift in an optical axis direction on the upper surface of the wafer 9 moves up and down on a mask 1 in an optical axis direction thus obtaining a correct focal point. However, the accurate control of the mask 1 is carried out by controlling the servo valve 6 while the distance between the lower surface (pattern surface) of the mask 1 and a referential surface 4a is being monitored with an air micrometer 3.
Patent JP-H10322327-A (JP)
Title: Encryption communication system
Inventor: FUKAWA YASURO
IPC: H04L9/22
Filed: 1997-05-20
Abstract: PROBLEM TO BE SOLVED: To prevent unauthorized use and leakage of data due to decoding of leaked encryption data by securing sophisticated data security in the case of data communication between computer networks or at a data card terminal so as to make illegal use of a data card or the like difficult. SOLUTION: A password generating start information generating program circuit 11 manages and generates information so that same information is not outputted again as password generating start information based on unforeseen information. A data terminal card device 2 uses a password generating program circuit 21 to generate a password based on the password generating start information from a host device 1. The password is fed to the host device 1, where the password is authenticated. When the password matches the password generated by the host device 1, the password is authenticated and communication of encryption data is attained. An encryption circuit 22 controls a plurality of encryption programs elaborately and timewise irregularly to generate encryption data.
Patent JP-S5354723-A (JP)
Title: Motor with brake
Inventor: ITOMI KAZUNOBU
IPC: H02K7/106
Filed: 1976-10-29
Abstract: PURPOSE: To reduce abnormal braking noise by providing gap between brake shoe of movable brake and core base, while installing core base to be loosely fittable in circumferential direction. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H0426016-A (JP)
Title: Oxide superconductor
Inventor: OKI SHUICHIRO
IPC: H01L39/00
Filed: 1990-05-19
Abstract: PURPOSE:To provide a high Jc uniform over the whole and allow application as a magnetism shielding material by forming honeycopmb structure with any desired section configuration. CONSTITUTION:An oxide type superconductor concerned is constructed in such an arrangement that a shell 2 and its inside are formed consolidated in so-called honeycomb structure, wherein the size and shape of the superconductor may be as any desired. In this honeycomb structure 1, honeycomb holes penetrate the superconductor in various shapes continuously and stretching long-axially. Accordingly the cells 3 constituting the honeycomb structure are arranged densely in the cross-section of the structure and oriented so that the thickness of cell bulkhead is uniform everywhere. The shape of cell may be embodies as any desired. This achieves a certain specified thickness, a high critical current density (Jc) uniform over the whole, and an enhanced magnetism shielding ability.
Patent JP-H0428651-A (JP)
Title: Taking up method and taking up control device for take-up of paper machine
Inventor: KACHI KAZUFUMI
IPC: B65H18/26
Filed: 1990-05-19
Abstract: PURPOSE:To enhance work efficiency and yield in processing paper by providing an actuator to tilt a winding arm and a control unit to detect the winding size of paper wound on a take up shaft and adjust the output of the actuator in accordance with a detected value. CONSTITUTION:A winding arm 4 to tiltingly support a take up shaft 3 and an actuator 5 to tilt the winding arm 4 are provided. A sensor 11 detects the winding size of paper 1 wound on the take up shaft 3 and a control unit 17 adjusts the output of the actuator 5 in accordance with a detected value. By the adjustment, contact pressure on a rotating drum 2 for the paper 1 on the take up shaft 3 is increased with the increase of the winding size.
Patent JP-S5752573-A (JP)
Title: Pulse arc welding device
Inventor: YAMAMOTO SHIYOUICHI
IPC: B23K9/12
Filed: 1980-09-17
Abstract: PURPOSE: To provide a titled device which improves control responsiveness for abrupt change of welding conditions by providing a function of setting the value of the constant controlled variable of welding arc voltage or electrode wire based on the time change rate of the average welding current attenuated of high frequency components.  
     CONSTITUTION: This device is constituted of the 1st control loop 1W6 and the 2nd control loop 5W10 as shown in the figure. A current change rate detecting part 7 eliminates high frequency components by using a low pass filter of about 10Hg cut-off frequency in order to take out average current from, for example, pulse-like welding current. Further, a high pass filter of about 1Hg cut-off frequency is applied in order to determine the change rate of the average current. Now, if, for example, a large wire projects, and the change in the welding current value decreases considerably, an output increase and decrease selecting part 8 emits an output decrease signal, and in accordance with this signal, an output signal generating part 9 applies the prescribed output decrease signal to an output setting part 10. Namely, in the 1st control loop, the correct control for large disturbance requiring a long time is accomplished in a short time. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H06339166-A (JP)
Title: Incomplete group automatic mdf device
Inventor: ITO MASAHIRO
IPC: H04Q1/14
Filed: 1993-05-31
Abstract: PURPOSE:To reduce cost and to make a device small by adopting an incomplete group network for the configuration of a network of a connection path changeover means. CONSTITUTION:An incomplete group automatic main distribution frame(MDF) device 3 adopts an incomplete group network for a connection path changeover means 3a. When a subscriber line 1 connected newly is designated from an exchange supervisor, the incomplete group automatic main distribution frame (MDF) device 3 uses a selection means 3b to select an idle exchange side line 2. Moreover, the selection means 3b references the operating state of the connection path changeover means 3a to select a connection path through which the idle exchange side line 2 and the subscriber line 1 are connected. Then the connection path changeover means 3a sets the connection path between the exchange side line 2 selected by the selection means 3b and the subscriber line 1. An incomplete group network configuration is adopted for the connection path of the connection path changeover means 3a of the incomplete group automatic main distribution frame (MDF) device 3 in this way to make the connection path changeover means 3a small in size.
Patent JP-H06318327-A (JP)
Title: Optical disk reproducing device and method
Inventor: OSHIMA YOICHI
IPC: G11B7/085
Filed: 1993-05-06
Abstract: PURPOSE:To enable moving an optical head by the track jump of one time by allowing the optical head to make a track jump while obtaining numbers of tracks required for the track jump from the track position at the present time to the track position at a target time. CONSTITUTION:The target time is inputted to a microcomputer 16 from a host computer 18. The computer 16 obtains a present time corresponding to the track position on the optical disk 12 to which the optical head 13 is accessing at present based on the signal from a digital signal processor 15. The computer 16 also obtains a present time corresponding to the persent time. Next, the computer 16 reads out a frame number corresponding to the present time from a ROM 17. Numbers of tracks from frame numbers corresponding respectively to the present time, the target time and the present time to the track position of the target time are calculated. The digital signal processor 15 allows the optical head 13 to jump tracks to a track position corresponding to the target time.