baber/WOPTO huggingface dataset:
Patent TW-230802-B (TW)
Title: Power saving method while computer is at stand-by state and its device
Inventor: CHEN YU
IPC: G06F1/26
Filed: 1993-03-27
Granted: 1994-09-21
Abstract: A power saving method while computer is at stand-by state, the methodcomprises: using a logic circuit which, when the CPU is not at stand-by state and theTA time of the output A signal frequency is at LOW, enables the RS flip flopoutput C signal frequency being at LOW and the output signal frequency B ofthe multiplexer being able to be selected as n2 normal signal frequency; a logic circuit which, when the CPU is at stand-by state, outputs HIGH forthe A signal frequency and HIGH for the output signal C of the RS flip flopso as to enable the output signal B of the multiplexer being able to selectn1 stop frequency signal to stop the CPU clock; and when the output signal C of the RS flip flop turning into HIGH, the counterstarts to count; after a certain period of time (TB), the output signal Dturns into HIGH which switches the RS flip flop to change the output signalC into LOW and controls the multiplexer signal B to select n2 normalfrequency signal to restore the CPU clock; when the time after the CPU clockhas been restored reaches a restoration time TC, the output signal D of thecounter turns into LOW to switch the output signal D of the counter to LOWso as to change the output of the RS flip flop into HIGH to stop the clockagain; the process is repeated to test if there is any program at thebackground mode to prevent computer down during restoration.
Patent TW-230746-B (TW)
IPC: A23L13/50
Filed: 1993-06-29
Granted: 1994-09-21
Abstract: An apparatus used for reducing the amount of pathogenic bacteria associated with a bird or other edible animal, and preferably chickens, comprising:   (a) a unit having an interior portion (14) having side and bottom walls, (23,18) an exterior portion (12) having side and bottom walls (19,21) and end walls (15) connecting said interior portion to said exterior portion wherein the area of said interior portion provides a space which completely surrounds one or more of the birds or animals (16) being treated; (b) one or more deluge nozzles (24) mounted within said interior portion of said unit and connected to a source of a bacteria reducing chemical solution to enable the bacteria reducing chemical solution (42) to be applied to the entire interior of the body cavity of the bird or animal being treated; (c) one or more spray nozzles (26) mounted within said interior portion of said unit and connected to a source of a bacteria reducing chemical solution to enable the bacteria reducing chemical solution to be applied to the entire external surfaces of the bird or animal being treated; (d) one or more lines (28) for connecting said one or more deluge nozzles and said one or more spray nozzles to the source of the bacteria reducing chemical solution; and (e) one or more connectors (36) for connecting the exterior portion or end walls of said unit to an existing overhead conveyor (38) located within the facility where the bird or animal is being treated;  and the process for using the apparatus are provided. <IMAGE>
Patent TW-302367-B (TW)
IPC: A61K31/7064
Filed: 1993-09-25
Granted: 1997-04-11
Abstract: Adenosine analogues which act selectively at adenosine receptors and which act in general as adenosine agonists are disclosed. From (in vitro) studies it is known that specific physiological effects can be distinguished as a result of this selectivity and that adenosine receptor activity (in vitro) correlates with adenosine receptor activity (in vivo). Pharmaceutical preparations of the subject compounds can be prepared on the basis of the selective binding activity of the compounds disclosed herein which will enhance certain physiological effects while minimizing others, such as decreasing blood pressure without decreasing heart rate.
Patent TW-327168-B (TW)
Title: Preparation of vitamin K
Inventor: TZAOO SHI-HWA
IPC: C07C46/00
Filed: 1993-11-24
Granted: 1998-02-21
Abstract: A new preparation of vitamin K1 and K2 as shown below by reaction of 3-substituted isobenzofuranones (1) with 1-substituted(E)-1-phenylsulfonylpropenes(2) is disclosed. The reactants (1) and (2) are known or readily prepared. The present invention allows the combination of three-step reaction in one pot, the economic use of alkylating reagent, and the high retention of side chain configuration under basic conditions.
Patent TW-223172-B (TW)
Title: Siganl sensing circuits for memory system using dynamic gain memory cells
Inventor: WOLFGANG KRAUTSCHNEIDER
IPC: G11C11/409
Filed: 1993-12-03
Granted: 1994-05-01
Abstract: A memory system includes a plurality of gain memory cells connected via bit bits to sense amplifiers with each sense amplifier having at least two pairs of metal oxide semiconductor (MOS) transistors which have opposite conductivity types. Each gain memory cell has two serially connected n-channel MOS transistors with a diode connected between a gate of a first of the transistors and a source thereof. Three illustrative embodiments of sense amplifiers are used with the gain memory cells.
Patent TW-240345-B (TW)
IPC: H01M50/491
Filed: 1994-04-13
Granted: 1995-02-11
Abstract: This invention teaches rechargeable manganese dioxide cells having alkaline electrolytes, zinc negative electrodes and manganese dioxide positive electrodes. In keeping with the present invention, the positive electrode is essentially unconstrained-that is, no cage is used in the cell to confine the positive electrode. During discharge of a rechargeable alkaline cell, the positive electrode may be inclined to swell, and during the charge cycle it may be inclined to contract or reduce its dimensions. However, the positive electrode is dimensioned so as to substantially fill the entire space allotted for it within the cell, while allowing for a slight accommodation for height-wise or longitudinal expansion or growth in bobbin cells. The positive electrode may include additives such as carbon or graphite to increase its electrical conductivity; hydrophobic agents such as PTFE, polyethylene or polypropylene to enhance the hydrogen permeability of the positive electrode and thereby lead to increased hydrogen recombination rates; and similar hydrophobic agents as well as hydrophillic additives to serve as lubricants and to reduce tool wear during manufacturing processes. Also, the discharge capacity of the negative electrode may be established so as to be in the range of from about 60% to about 120% of the theoretical one electron discharge capacity of the positive MnO2 electrode.
Patent TW-254874-B (TW)
Title: Laser beam machining apparatus and method
Inventor: SUGAWARA MASAYUKI
IPC: B23K26/382
Filed: 1995-02-22
Granted: 1995-08-21
Abstract: A laser beam machining apparatus, which is characterized in comprising a control device, a laser oscillator which receives the processing instructions from the control device to generate output laser beam, and a laser processing machine which receives the laser beam and focuses on the processed object whiling moving the processed object corresponding to the processing head according to the processing instruction for movement of the processed object received from the control device; in which the control device comprises a program analysis part, which analyzes the processing instructions according to the sequence of control program and generates and outputs the processing instructions; a processing conditions recording part, which receives processing data, such as processing of receiving hole, processing preparation, cutting processing, etc., and selectively outputs the processing data; a processing instruction part, which receives the processing conditions read from the processing conditions recording part and generates and outputs the processing instructions for the laser oscillator and the movement of the processed object; and a preparatory processing instruction part, which detects the hole-opening command from the program analysis part to generate output signal for preparatory processing and operates jointly with the processing instruction part to displace the data of processing conditions with processing instructions preparing for processing generated by the data of preparatory processing conditions, next when the output of the laser oscillator is zero generates processing instructions to undo the processing location to the hole drilling processing position and output from the processing instruction part.
Patent TW-279240-B (TW)
Title: Parallel-plate icp source/rf bias electrode head
Inventor: KENNETH S COLLINS
IPC: H01J37/32
Filed: 1995-09-26
Granted: 1996-06-21
Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inletsystem for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.
Patent TW-337622-B (TW)
Title: PCMCIA type II memory card
Inventor: ANTONIUS HENRICUS JOHANNA GERR
IPC: H01R33/94
Filed: 1996-05-02
Granted: 1998-08-01
Abstract: A type II PCMCIA memory card comprising a printed circuit board interposed between card shields having edges where the improved elements include tabs for the connection of the recess of the other shield edge on a shield.
Patent TW-344751-B (TW)
Title: A flame retardant polyolefin compound having low smoking and toxicity
Inventor: NAMIKI YUKIHIKO
IPC: C08K3/20
Filed: 1996-07-23
Granted: 1998-11-11
Abstract: A flame retardant polyolefin compound having low smoking and toxicity, which is characterized in comprising 100 parts by weight of polyolefin resin and 60 to 150 parts by weight of a flame-retarding component which is prepared by adding 1 to 20 parts by weight of fine carbon powder to 100 parts by weight of composite metal hydroxide expressed by the general formula Mg1-xM+2x(OH)2 in which M+2 is at least one element selected from the group consisting of bivalent metallic ions Mn+2, Fe+2, Co+2, Ni+2, Cu+2, and Zn+2, and x has a value satisfying 0.001≰x≰0.9.
Patent TW-316996-B (TW)
Title: Improved anisotropy for polysilicon and polycide plasma etch applications by use of silicon-containing compounds
Inventor: DALE A OLSON
IPC: H01L21/02
Filed: 1996-08-05
Granted: 1997-10-01
Abstract: During the etching of a silicon-containing material using a halogen-containing etch gas, a silicon-containing gas is added to the etch gas to provide increased sidewall protection during the etch. Suitably up to about 50 percent by volume of a silicon-containing gas such as silane is added during the overetch step to improve anisotropy of the etch and prevent notching at the silicon-substrate interface.
Patent TW-341728-B (TW)
Title: Process for producing a DRAM with a planar surface and less lithography mask
Inventor: TZENG HORNG-HUEI
IPC: H01L27/108
Filed: 1996-12-05
Granted: 1998-10-01
Abstract: A process for producing a DRAM, which comprises: forming a field oxide layer, polysilicon wordline and transfer gate transistor on a silicon semiconductor substrate, the transfer gate transistor comprising a gate oxide layer, gate and source/drain; depositing a first dielectric layer and using a lithography technique and etching technique to etch the first dielectric layer on the source/drain to expose the source/drain to simultaneously form a cell contact on the source region and a bit line contact on the drain region; depositing a layer of first polysilicon; etching back the first polysilicon to etch off a portion of the first polysilicon; depositing a layer of metal silicide; depositing a second dielectric layer; using a lithography technique and etching technique to etch the second dielectric layer, metal silicide and first polysilicon to form a bit line structure, while simultaneously forming a first polysilicon plug or stud in the cell contact; depositing a third dielectric layer; using an etching technique to etch back the third dielectric layer to form a third dielectric layer spacer on the secondary side of the bit line structure; depositing a layer of second polysilicon; using a lithography technique and etching technique to etch the second polysilicon outside the cell contact region to form a bottom electrode of capacitor; forming a capacitor dielectric layer; depositing a layer of third polysilicon; using a lithography technique and etching technique to etch the third polysilicon and capacitor dielectric layer to form a bottom electrode of capacitor.
Patent TW-419509-B (TW)
Title: Modified pearl lustre pigments for waterborn coating systems
Inventor: DUSCHEK JOACHIM
IPC: C08K9/06
Filed: 1997-09-24
Granted: 2001-01-21
Abstract: Modified pearl lustre pigments for waterborne coating systems, based on a platelet-form substrate coated with metal oxides and, located on the topmost metal oxide layer, a top layer consisting of at least two oxides and/or mixed oxides from the group consisting of silicon dioxide, aluminium oxide, cerium oxide, titanium oxide and zirconium oxide, and on a water-based oligomeric silane system. The oligomeric silane system can be described, for example, by the following approximate structure: [HO[Si(A)(OH)Z(CH3)1-ZO]a[Si(B)(OH)Y(CH3)1-YO]b[Si(C)(OH)W(CH3)1-WO]c[Si(D)(OH)V(CH3)1-VO]d[H.(HX)e, where A = aminoalkyl radical derived from the general formula V, B = glycidyl ether alkyl radical derived from the general formula VI, C = acryloxyalkyl or methacryloxyalkyl radical of the general formula VII, D = alkyl radical of the general formula VIII, HX = monobasic acid, where X = inorganic or organic acid radical such as, for example, chloride, nitrate, formate, acetate, v is equal to 0 or 1 and w is equal to 0 or 1 and y is equal to 0 or 1 and z is equal to 0 or 1 and a+b+c+d>=4 and a<=e<=2a, where 0<= a/(b+c+d)<=3, especially for a/(b+c+d) equal to 0 if a=0 and/or c equal to d equal to 0 and b>=1 and also for 0.5<= a/(b+c+d)<= 3.
Patent TW-347323-B (TW)
Title: Disposable diaper of briefs type
Inventor: OTUBO TOSHIFUMI
IPC: A61F13/49
Filed: 1997-10-03
Granted: 1998-12-11
Abstract: A disposable diaper of briefs type, characterized in comprising a liquid absorbing pad disposed between a liquid pervious surface film and a liquid impervious liner film, the front-and-rear longitudinal direction of which being the front waist portion and the rear waist portion, and a crotch portion being formed between the two portions, the film material constituting the left and right side edge portions of the front and rear waist portions being overlapping with each other into a folded palm shape; a securing portion of the film material in the side edge portion being more easily forming a smaller thickness than non-securing portions surrounding the securing portion and forming a recess which displays recognizable katakana, hiragana, Roman letters, Arabic numerals, Chinese characters, etc., on the outside of the diaper.
Patent TW-473862-B (TW)
Title: Slurry distribution system for the CMP process of semiconductor device fabrication process
Inventor: LEE SEUNG-BAE
IPC: B24B57/02
Filed: 1997-12-29
Granted: 2002-01-21
Abstract: There is provided a slurry distribution system for supplying the slurry used in the planarization process of the wafer surface by the chemical reaction, wherein the slurry distribution system comprises a movable, supply line penetrating the top of a tank and vertically moving with an opening on its one end placed inside the tank; flexible connecting means connecting the other end of the movable supply line located outside the tank with a main supply line which is led to CMP equipment, and allowing the movable supply line to vertically move; and position-controlling means making the opening of the movable supply line always placed under the top surface of the slurry with a predetermined distance by moving the movable supply line vertically in accordance with the amount change of the slurry inside the tank.
Patent TW-415970-B (TW)
Title: Vapor-phase film growth apparatus and gas ejection head
Inventor: HORIE KUNIAKI
IPC: C23C16/44
Filed: 1998-01-05
Granted: 2000-12-21
Abstract: A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.
Patent TW-486456-B (TW)
Title: Process for hydrogenating imines and enamines to amines
Inventor: FUCHS EBERHARD
IPC: C07C209/70
Filed: 1998-02-07
Granted: 2002-05-11
Abstract: A process for hydrogenating a compound in the group of the imines or enamines I to an amine II in the presence of a nitrile III, said nitrile III being essentially not hydrogenated comprises reacting a mixture comprising a compound I and a nitrile III with a gas comprising molecular hydrogen in the presence of a catalyst IV.
Patent TW-465234-B (TW)
Title: Single chip VLSI implementation of a digital receiver employing orthogonal frequency division multiplexing
Inventor: ALAM DAWOOD
IPC: H04L27/26
Filed: 1998-08-17
Granted: 2001-11-21
Abstract: The invention provides a single chip implementation of a digital receiver for multicarrier signals that are transmitted by orthogonal frequency division multiplexing. Improved channel estimation and correction circuitry are provided. The receiver has highly accurate sampling rate control and frequency control circuitry. BCH decoding of tps data carriers is achieved with minimal resources with an arrangement that includes a small Galois field multiplier. An improved FFT window synchronization circuit is coupled to the resampling circuit for locating the boundary of the guard interval transmitted with the active frame of the signal. A real-time pipelined FFT processor is operationally associated with the FFT window synchronization circuit and operates with reduced memory requirements.
Patent TW-382742-B (TW)
Title: Air-tight part and its production
Inventor: AIHARA YASUFUMI
IPC: H01L21/683
Filed: 1998-02-27
Granted: 2000-02-21
Abstract: To enable an air-tight part having high air tightness and high erosion resistance to retain the air tightness, when it undergoes thermal shock and heat cycle, in air-tight parts provided with a sintered body mainly comprising silicon carbide and a silicon carbide coating layer covering the surfaces of the sintered body formed by chemical vapor deposition. This air-tight part comprises the sintered body 17 and the silicon carbide coating layer 18 formed by the chemical vapor deposition and covering the surfaces of the sintered body 17. A crack 13 is formed on the silicon carbide coating layer, metallic silicon 20 is brought into contact with the silicon carbide layer 18 and the metallic silicon 20 is heated over its melting point to fill the crack 18.
Patent TW-393665-B (TW)
Title: Flat radiator
Inventor: VOLLKOMMER FRANK DR
IPC: H01J65/00
Filed: 1998-03-20
Granted: 2000-06-11
Abstract: A flat radiator (1) with a closed discharge vessel (2) filled with a gas filling has dielectrically impeded, strip-like electrodes in the interior. The discharge vessel (2) comprises at least one base plate (5) an one top plate (6), which are interconnected in a gas-tight fashion by means of solder (8), if appropriate also via an additional frame (7) arranged between the top plate and base plate. The strip-like internal electrodes (3;4) additionally merge into feedthroughs (10,11), and the latter in turn merge into external supply leads (12,13) in such a way that the internal electrodes (3,4), the feedthroughs (10,11) and the external supply leads (12;13) are constructed as in each case functionally different sections of cathodeside or anode-side structures (3,10,12; 4,11,13) resembling conductor tracks. At least the anodes (4) are covered in each case with a dielectric layer (17). The feedthroughs (10, 11) are, if appropriate, additionally covered in a gas-tight fashion by the solder (8).
Patent TW-374256-B (TW)
Title: Antenna assembly comprising whip antenna and helical antenna contained in antenna top rotatably mounted on top end of the whip antenna
Inventor: OTOMO SHINICHI
IPC: H01Q1/40
Filed: 1998-07-14
Granted: 1999-11-11
Abstract: An antenna assembly (30) comprising a whip antenna (II) and an antenna top (12) including a helical antenna (18) and mounted on a top end of the whip antenna. The antenna assembly is slidably mounted on a Cellular telephone set (20) and movable between an extended position and a retracted position. The antenna assembly is further provided with a conductor sleeve (32) connected to the helical antenna. In the retracted position, the helical antenna is brought into electrical connected to an electrical circuitry in the telephone set through the conductor sleeve. The conductor sleeve is rotatably mounted but prevented from axial movement on a dielectric joint member (31) fixed on the top end of the whip antenna, but is fixed to the antenna top so that the antenna top is rotatably mounted on the joint member. The antenna top is mounted on the joint member but freely rotated on the joint member.
Patent TW-411561-B (TW)
Title: Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
Inventor: NGAI CHRIS
IPC: H01L21/762
Filed: 1998-07-24
Granted: 2000-11-11
Abstract: A method and apparatus for reducing oxide traps within a silicon oxide film by incorporating a selected level of fluorine in the silicon oxide film. The method includes the steps of distributing a fluorine source to a processing chamber at a selected rate with the rate being chosen according to the desired level of fluorine to be incorportated into the film, flowing a process gas including a silicon source, an oxygen source and the fluorine source into the processing chamber, and maintaining a deposition zone within the chamber at processing conditions suitable to deposit a silicon oxide film having the selected level of fluorine incorporated into the film over a substrate disposed in the chamber. In a preferred embodiment, the selected level of fluorine incorporated into the film is between 1x10<20>atoms/cm<3> and 1x10<21>atoms/cm<3>. In another preferred embodiment the silicon oxide film is deposited as a first layer of a composite layer premetal dielectric film.
Patent TW-384441-B (TW)
Title: Graphics processing method and apparatus thereof
Inventor: MIZUTANI KENICHI
IPC: G06F3/0485
Filed: 1998-08-26
Granted: 2000-03-11
Abstract: The graphics apparatus of the present invention is comprised of: registers, in which the address of a primitive graphic form stored in a graphic ROM unit and the number of dynamic images for the primitive graphic form are both stored, and an updating register, in which the difference value or the logically calculated value between the address of the primitive graphic form stored in the graphic ROM unit and the address of the dynamic graphic forms stored in a graphic ROM unit for dynamic graphic forms, is stored. Addresses necessary to display dynamic frames in the graphic ROM unit are calculated based upon the previously mentioned values and addresses.