Patent GB-996762-A (GB)
Title: Solid state device
IPC: H01L39/00
Filed: 1962-07-13
Abstract: 996,762. Superconductor devices. RADIO CORPORATION OF AMERICA. July 13, 1962 [July 31, 1961], No. 27113/62. Heading H1K. A superconductor device comprises three superconducting layers 21, 25, 29 separated by insulating films 23, 27 sufficiently thin to permit tunnelling, the energy gaps of layers 21, 29 being substantially equal and greater than that of layer 25. In operation, variation of potential between layers 21, 29 causes the injection or removal of normal carriers into the middle zone to move this zone into or out of the superconducting state thereby switching the current in the load 49 between two valves. In one manner of use the device is held at a temperature just below the critical temperature of the centre region. Figs. 3b, 3c represent the energy levels in the various layers with different values of bias voltages, a larger bias voltage being applied in the case of Fig. 3c. The single hatched areas represent normal carriers and the cross-hatched areas the superconducting carriers. When the bias voltage gives the state of affairs in Fig. 3b, normal electrons are removed from layer 25 by tunnelling to layer 21, and holes are removed from 25 by tunnelling to layer 29. This removal of normal carriers from layer 25 results in the effective temperature being reduced so that the energy gap increases at this stage and the layer remains super-conducting. When the bias voltage is further increased as shown in Fig. 3c, holes now tunnel from layer 21 to layer 25 and electrons from 29 to 25. Thus the number of normal carriers increases thereby increasing the effective temperature of the layer until eventually the energy gap becomes zero and the material is no longer superconductive so switching the transverse path to its high impedance state. In a modified manner of use, the operating temperature is just above the critical temperature for the central layer. When the applied voltage is raised to a first level normal charge carriers are drained from the central layer much as described above, and in this case the effective temperature is lowered below the critical temperature and the layer becomes superconducting and exhibits an energy gap. On further increase of the bias voltage reinsertion of normal charge carriers occurs as described above and the layer again ceases to be super-conducting. To facilitate removal of the carriers from the layers 23, 29, normal metal sinks covering the whole of the exterior portion of the layers may be provided between the layers and the electrodes. The insulating layers may be of aluminium oxide, formed by oxidation of the central layer when this is of aluminium; or of silicon dioxide deposited from the vapour state; or of barium or chromium stearate deposited by adsorption. In a further embodiment a borosilicate glass square has a diagonal strip of lead, a lateral strip of aluminium and a further strip of lead along the other diagonal, all deposited by vapour deposition through suitable masks, the intervening insulating layers being formed either by oxidizing the lead and aluminium or by vapour deposition of SiO or SiO 2 , the device being formed at the centre of the square where the elements intersect. Platinum electrodes are preformed on the substrate by applying a platinum paint or resinate to appropriate points and heating to cause decomposition and adherence of the platinum to the substrate. Suitable superconducting materials are Tc, Nb, Pb, La, V, Ta, Hg, Sn, In, Tl, Re, Th, Al, Ga, Zn, U, Os, Zr, Cd, Ru, Ti and Hf.