Patent DE-102007036841-A1 (DE)
Title: Semiconductor component comprises a semiconductor chip with contacts on its upper side, external contacts, connecting elements arranged together on a single-piece structural element, and a chip carrier having an upper side and a backside
Inventor: MAHLER JOACHIM
IPC: H01L21/58
Filed: 2007-08-06
Abstract: The semiconductor component (1) comprises a semiconductor chip (3) with first and second contacts on its upper side (8), external contacts (14, 15, 16, 17, 18), connecting elements (24) arranged together on a single-piece structural element (25), which has direct copper bonded (DCB)-material, and a chip carrier having an upper side and a backside. The connecting elements connect the first and second contacts with the external contacts. Each of the connecting elements has two contact surfaces and a conducting path. The semiconductor chip has a backside, on which a third contact is arranged. The semiconductor component (1) comprises a semiconductor chip (3) with first and second contacts on its upper side (8), external contacts (14, 15, 16, 17, 18), connecting elements (24) arranged together on a single-piece structural element (25), which has direct copper bonded (DCB)-material, and a chip carrier having an upper side and a backside. The connecting elements connect the first and second contacts with the external contacts. Each of the connecting elements has two contact surfaces and a conducting path. The semiconductor chip has a backside, on which a third contact is arranged. The DCB-material has an one-side copper-coated ceramic plate based on aluminum oxide and aluminum nitride, and a structured copper layer with a thickness (d) of 100-600 mu m. The thermal expansion coefficient of the DCB-material is adjusted to 7.1 ppm/K for aluminum oxide and 4.1 ppm/k for aluminum nitride during suitable mixing of the ceramics at the thermal expansion coefficient of silicon. The structure of the copper layer is adjusted to the electrodes on the upper side of the power semiconductor chip, and has a signal conducting path for connecting a gate electrode and a power conducting path for connecting a power electrode. The structural component stretches itself between the upper side of the semiconductor chip and the two separate external contacts. The first contact is electrically connected over the conducting path with the external contacts. The structural element has a thermal expansion coefficient of 10 ppm/K. The structural element has a preformed base part, which is made of plastic/sintered ceramics and has insulating fillers. The thermal expansion coefficient of the preformed base part is adjusted to the thermal expansion coefficient of the semiconductor material of the semiconductor ship. The structural element has conducting paths and contact surfaces. The cross section of the conducting paths is adjusted to the current density, which flows over the contacts. The structural element has a coating structured to the conducting paths and the contact surfaces. Flat conductors form the external contacts, which form the surface-mountable flat external contacts of the semiconductor component. The first and the second contacts of the upper side of the chip form a common contact-connection level with associated contact surfaces of the structural element and are surface-mountable. The contacts of the upper side and the contact surfaces of the structural element have coatings diffusion slot components for forming inter-metallic phases. The structural element has a pitch, an obtuse support and a planar connecting plate. The height of the pitch and the obtuse support is adjusted to the thickness of the semiconductor chip. The external contacts are preformed for equalizing the thickness and carry the semiconductor chip. The third contact covers the backside as single backside electrode. The semiconductor component has a diffusion slot layer between the third contact and the assigned chip carrier. The first contact is a second power electrode and the second contact is the gate electrode. The second power electrode is a source electrode, the first power output electrode is a drain electrode of a vertical power metal oxide semiconductor field effect transistor (MOSFETs), and the gate electrode is an insulating gate electrode. The structural element has further contact surfaces for signal- and/or supply electrodes of the upper side of the semiconductor chip, which is provided with a monolithic integrated gate circuit and/or logic circuit. The power MOSFET has a monolithic integrated gate driver. The first contact is an emitter electrode, the third contact is a collector electrode of a vertical insulated gate bipolar transistor (IGBT), and the second contact is the insulating gate electrode. The gate electrode of the chip has a vertical trench gate electrode. The semiconductor component has a cavity housing, in which the chip, the structural element and upper side of the external contacts are arranged. The lower side of the external contacts is freely accessible on the lower side and/or the edge sides of the semiconductor component. The semiconductor component has a plastic housing, in which plastic housing mass of the chip, the structural element and surfaces of the external contacts are embedded. The lower sides of the external contacts of the flat conductor on the lower side of the semiconductor component and/or the upper side of the structural element on the upper side of the semiconductor element are freely held by plastic housing mass. The chip is arranged on the carrier. The backside of the chip carrier is freely accessible by the plastic housing mass. The backside of the chip carrier provides for an external contact of the semiconductor component. An independent claim is included for a method for the production of a component.