baber/WOPTO huggingface dataset:
Patent TW-330908-B (TW)
Title: The refuse bin
Inventor: KLEIN ADOLF
IPC: B65F1/14
Filed: 1997-07-01
Granted: 1998-05-01
Abstract: An upright cylinder-shaped refuse bin, it is made of plastic material. The refuse bin has a hinged lid, and is co-axially mounted on rollers inside the recess of bottom of refuse bin. The rollers are connected together by axle shaft. Its features are: Arrange mounting barrels inside the recess, and the mounting barrels are connected into one piece by a plurality of ribs. And commonly connect the axle shaft of rollers and mounting barrels to compose a locking mechanism, which axially lock the axle shaft.
Patent TW-442558-B (TW)
Title: Liquid crystal compounds having fluorinated linkages, liquid crystal compositions, and liquid crystal display devices
Inventor: MATSUI SHUICHI
IPC: C09K19/46
Filed: 1997-04-08
Granted: 2001-06-23
Abstract: Liquid crystalline compounds which exhibit a low threshold voltage, have a low viscosity, and are excellent in miscibility with other known liquid crystalline compounds, particularly excellent in that at low temperatures; liquid crystal compositions comprising the liquid crystalline compound; and liquid crystal display devices comprising the liquid crystal composition are provided; and the liquid crystalline compounds have a fluorine substituted bonding group and are expressed by the general formula (1) wherein R1 and R2 independently represent a straight chain or branched alkyl group having 1 to 15 carbon atoms or an alkenyl group having 2 to 15 carbon atoms, a halogen atom, CN group, CF3 group, OCF3 group, or OCHF2 group, one or more hydrogen atoms in the alkyl or alkenyl group may be replaced by a halogen atom, and one or not-adjacent two or more CH2 groups in the alkyl or alkenyl group may be replaced by oxygen atom, sulfur atom, -SiH2-, -CH=CH-, or -C≡C-; ring A, ring B, ring C, and ring D independently represent 1,4-cyclohexylene group one or more CH2 groups on the ring may be replaced by oxygen atom or sulfur atom, 1,4-cyclohexenylene group, or 1,4-phenylene group one or more CH groups on the ring may be replaced by nitrogen atom and one or more hydrogen atoms on the ring may be replaced by a halogen atom; Z1 and Z2 independently represent -(CH2)2-, -CH=CH-, -C≡C-, or single bond; m and n are independently an integer of 0 to 2; q and r are independently 1 or 2; o and p are independently an integer of 0 to 2 provided that o+p=2; and an element which constitutes the compound may be replaced by its isotope.
Patent TW-326561-B (TW)
Title: The method for forming filed implantation
Inventor: HWANG SHIOU-WENN
IPC: H01L21/76
Filed: 1997-06-04
Granted: 1998-02-11
Abstract: A method for forming field implantation includes the following steps. Provide a Si substrate, which has form a pad oxide and a defined Silicon-Nitride layer on it. The Silicon-Nitride layer is used to expose the pad oxide surface that is desired to form field oxide. Proceed thermal processing to form field oxide and reserve Silicon-Nitride layer. Form a photoresist layer to expose a specified area that will proceed ion implantation. The ion will pass through field oxide to form a field implantation. And also pass through reserving Silicon-Nitride and pad oxide layer to form a shallow junction on Si substrate surface inside active area.
Patent TW-340960-B (TW)
Title: Process for forming deep trench drams with sub-groundrule gates
Inventor: JOHNN ALSMEIER
IPC: H01L21/28
Filed: 1997-06-12
Granted: 1998-09-21
Abstract: A method of forming sub-GR gatesi a deep trench DRAM cell, comprizing a deep trench, a shallow trench insulation and forming of nitride package on it, with the following steps: depositing a sacrifice insulator on the semiconductor substrate; corrosion a cavity on selected site of the sacrifice insulator; stuffing with insulation material the cavity for forming column structures; removal of the remainder of the sacrifice insulator; and etching a trench along each of the column structure of the insulation material; stuffing with conductive materials the trench for forming a pair of trench gate electrode.
Patent TW-345736-B (TW)
Title: Field-effect transistor and manufacture thereof
Inventor: YASUMURA KENJI
IPC: H01L27/088
Filed: 1997-07-22
Granted: 1998-11-21
Abstract: A field-effect transistor having a gate electrode length (L) of less than 0.50 μm, which is characterized in comprising: a semiconductor substrate of a first conductive type having a primary surface, a gate electrode formed on the primary surface of the semiconductor substrate and formed by a gate insulative film, and a pair of dopant regions of a second conductive type formed on a region of the semiconductor substrate on both sides of the gate electrode; and a dopant concentration peak of the first conductive type being existed in the surface region starting from the edges of the gate electrode towards the center until a position less than L/4 in the surface region of the semiconductor substrate below the gate electrode.
Patent TW-396447-B (TW)
Title: Method of making a semiconductor device having planarized insulating layer
Inventor: OOHIRA SEIICHIROU
IPC: H01L21/302
Filed: 1997-11-14
Granted: 2000-07-01
Abstract: A method of manufacturing a semiconductor device has the steps of: forming a wiring pattern by dry etching a wiring layer on a semiconductor substrate, using a resist  pattern as a mask; immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching; then, processing the wiring pattern with fluid not containing amine and being capable of removing deposition residues; forming a conformal insulating layer on the processed wiring pattern; and forming an insulating layer having a planarizing function on the conformal insulating layer by CVD. This method is suitable for multi-layer wiring, and can form an interlayer insulating film having a satisfactory planarizing function.
Patent TW-410438-B (TW)
Title: Integrated circuit with twin tub
Inventor: CHITTIPEDDI SAILESH
IPC: H01L21/8238
Filed: 1998-01-14
Granted: 2000-11-01
Abstract: A twin tub integrated circuit and method for its formation are disclosed. A portion of the substrate is covered by photoresitst while an n region is formed, illustratively, by ion implantation. Then the n region is covered with a protective material, illustratively a spin on glass or another photoresist. The previously-formed photoresist is removed and a p-type implant is performed to create an p region. When all the protective layers are removed, both regions have upper surfaces which are co-planar. The co-planar surfaces, a departure from previous parctive, make submicron lithography easier. The regions are annealed to form twin tubs.
Patent TW-376413-B (TW)
Title: Method for making yarns and constitution structure thereof
Inventor: ZHANG HONG-ZHOU
IPC: D06B3/14
Filed: 1998-01-12
Granted: 1999-12-11
Abstract: The present invention relates to a method for making yarns and a constitution structure thereof, which essentially comprises weaving yarns into a tubular winding, dyeing the winding, providing the dyed winding as a yarn for weaving a cloth. Since the yarn has an appropriate length when it is withdrawn from the winding, the yarn can be used to weave a filamental fabric having an excellent industrial applicability.
Patent TW-365004-B (TW)
Title: Presettable static random access memory
Inventor: SHIU RUNG-FU
IPC: G11C5/02
Filed: 1998-02-18
Granted: 1999-07-21
Abstract: A kind of static random access memory cells array which can be preset at a special value with no need to write to each individual memory cell. There is an address line controller which is able to response to the preset, read and write signals. If the write control signal is at "asserted", the address line controller will sustain address line at the "asserted" state so that the reading cycle thereafter will output the content of the memory cells just written. If the memory cells in the array have not been written, the address line controller will set the address lines at the "deasserted" state and activate the setting cells so that the reading cycle thereafter will output the logical state of setting cells in order to replace the content in the memory cells array.
Patent TW-407120-B (TW)
Title: Sealing ejectorpin
Inventor: VENROOIJ JOHANNES L G M
IPC: B29C45/40
Filed: 1998-02-19
Granted: 2000-10-01
Abstract: The invention relates to an ejector pin receivable in a mould part of a mould for encapsulating electronic components mounted on a carrier, wherein the substantially cylindrical ejector pin is provided with a side wall in which at least one recess is arranged close to the end which makes contact with the product for ejecting. The invention also relates to a mould part in which an opening is arranged for guiding an ejector pin, wherein at least one recess is arranged in the wall of the opening. The invention also comprises a mould for encapsulating electronic components in addition to a method for sealing an interspace between an ejector pin and an opening in a mould part.
Patent TW-374144-B (TW)
Title: User registration
Inventor: SVEDBERG JOHAN
IPC: G09C1/00
Filed: 1998-03-04
Granted: 1999-11-11
Abstract: The purpose of the present invention is to be able to register and authenticate a user and thus to allow for a simple charging method. Achievement of registration and authentication to allow for simple charging is solved by letting the client connect to a predefined registry function supplying the telephone number the client is using and that the registry function keeps a table with telephone numbers, authentication codes and IP-addresses.
Patent TW-409443-B (TW)
Title: Electromagnetic shielding structure
Inventor: MATSUMOTO HIROSHI
IPC: H05K9/00
Filed: 1998-06-03
Granted: 2000-10-21
Abstract: To shape contact pieces for bringing the shielding function parts of a surface case and a back case, which constitute a housing, into electrical continuity without bending them and to fit the pieces to thin ribs in the case. Metallic shielding layers are adhered by the inner face 55 and a partition wall 59 of the back case 43, so that they surround a high-frequency oscillation circuit. A contact pieces 63 are held in grooves 61 which are provided in recesses from the top face of the partition wall 59. The contact pieces 63 are formed by punching the conductive metal plate, and contact parts 75 are bent in a direction orthogonal to a punching direction. Then, they are brought into contact elastically with the shielding function part 53 of the case of the opposite side. Since the contact pieces 63 can be shaped only by punching fitted to the grooves 61 of width which is almost similar to the plate thickness, they can be fitted in the thickness part of the thin ribs 57 and 59.
Patent TW-394853-B (TW)
Title: Anamorphic scan lens for laser scanner
Inventor: TAMKIN JOHN M
IPC: G02B26/12
Filed: 1998-07-07
Granted: 2000-06-21
Abstract: An anamorphic, catadioptric scan lens simultaneously corrects for distortion, polygon mirror wobble, and flat-field telecentric scanning of polychromatic laser light. This system is also capable of imaging multiple beams and is corrected for differential distortion.
Patent TW-550433-B (TW)
Title: Toner compositions for development, developer compositions, and methods of imaging
Inventor: LITTLE CHARLES B
IPC: G03G9/09
Filed: 1998-07-21
Granted: 2003-09-01
Abstract: A toner composition is disclosed which contains modified pigment particles having attached organic groups and styrenic polymer-based resin particles. The organic groups which are attached to the pigment particles are positively chargeable. Developer compositions containing the toner compositions of the present invention and methods of imaging are also described which use the toner compositions of the present invention.
Patent TW-421947-B (TW)
Title: Method and apparatus of performing a fine frequency synchronization compensating for a carrier frequency deviation from an oscillator frequency in a multi-carrier demodulation system
Inventor: EBERLEIN ERNST
IPC: H04L27/26
Filed: 1998-08-05
Granted: 2001-02-11
Abstract: A method and an apparatus relate to a fine frequency synchronization compensating for a carrier frequency deviation from an oscillator frequency in a multi-carrier demodulation system (130) of the type capable of carrying out a differential phase decoding of multi-carrier modulated signals, the signals comprising a plurality of symbols (200), each symbol being defined by phase differences between simultaneous carriers (202) having different frequencies. A phase difference between phase of the same carrier (202) in different symbols (200) is determined. Thereafter, a frequency offset is determined by eliminating phase shift uncertainties corresponding to codeable phase shifts from the phase difference. Finally, a feedback correction of the carrier frequency deviation is performed based on the determined frequency offset. Alternatively, an averaged frequency offset can be determined by averaging determined frequency offsets of a plurality of carriers (202). Then, the feedback correction of the frequency deviation is performed based on the average frequency offset.
Patent TW-407254-B (TW)
Title: Driving method of AC type discharge display device
Inventor: AMANO YOSHIFUMI
IPC: G09G3/20
Filed: 1998-10-06
Granted: 2000-10-01
Abstract: The driving method of the AC type discharge display device is disclosed in which the display device provided a pair of discharge electrodes cross each other and opposite with discharge gas there between, and formed from multiple wire electrodes, at least one of the discharge electrode with its wire electrode coated by the dielectric material, said method characterized in that the AC discharge keep pulses applied to said pair of the discharge electrodes are formed from the first pulse and the second pulse with a polarity opposed to the first pulse and generated following the first pulse, the first pulse is small width pulse with a pulse width during which the priming effects of the charged particle or the pre-stable atom generated by the first pulse remain at the discharge space, the second pulse is large width pulse generated before the priming effect of the first pulse extinguished and approach the first pulse, and with a pulse width until the discharge stopped caused by the wall charge formed on the dielectric material layer, the discharge is continue by applying the AC discharge keep pulse formed from the first and the second pulse to the pair of discharge electrodes, the driving method of AC type discharge display device thus made can be used to decrease the influence caused by impact the ion on the discharge electrode and the fluorescent substance.
Patent TW-505984-B (TW)
Title: Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
Inventor: YE YAN
IPC: H01L21/316
Filed: 1999-03-08
Granted: 2002-10-11
Abstract: A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen fluorine, chlorine, and bromine content. A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
Patent TW-434105-B (TW)
Title: Wafer retaining device in chemical mechanical polishing process
Inventor: DENG GUO-SHIOU
IPC: H01L21/304
Filed: 1998-12-29
Granted: 2001-05-16
Abstract: A wafer retaining device holds the wafer in order to perform the chemical mechanical polishing process on a polishing pad with slurry. The polishing pad is grooved in order to let the slurry flow into the gap between the polishing pad and wafer. The wafer retaining device has a suction device which sucks the wafer when the wafer contacts the polishing pad with slurry. Besides, the retaining device has a retaining ring with inner and outer sides. The inner side of the retaining ring surrounds the suction device and keeps the wafer on the surface of the suction device. Furthermore, there are several channels on the retaining ring in order to keep and let the slurry flow into the gap between the wafer and polishing pad. Each channel has a closed end near the inner side and an open end aligned with the outer side. The channels incline to the rotating direction of the retaining ring along the radial direction of the retaining ring.
Patent TW-409404-B (TW)
Title: Fabrication method of semiconductor device with HSG configuration
Inventor: HONMA ICHIRO
IPC: H01L21/8242
Filed: 1999-02-01
Granted: 2000-10-21
Abstract: A fabrication method of a semiconductor device is provided, which makes it possible to introduce suitably a dopant into surface grains of a semiconductor layer at a comparatively low temperature. In the first step, a first semiconductor layer is formed over a semiconductor substrate through a first dielectric. In the second step, the first semiconductor layer is heat-treated to form semiconductor grains on a surface of the first semiconductor layer, thereby roughening the surface of the first semiconductor layer. The grains are made of a same material as that of the first semiconductor layer. In the third step, the first semiconductor layer with the semiconductor grains is heat-treated at a temperature of approximately 700 DEG C to 780 DEG C for a specific time in an atmosphere containing a gaseous dopant, thereby introducing the dopant into the semiconductor grains of the first semiconductor layer from the atmosphere.
Patent TW-451149-B (TW)
Title: Fast area-coverage computing method for anti-aliasing in graphics
Inventor: LI RUEN-RUNG
IPC: G09G5/20
Filed: 1999-02-26
Granted: 2001-08-21
Abstract: A pixel based method for the computation of sub-pixel area-coverage is implemented in an area-coverage hardware module, within a 3D computer graphics rendering engine. Unlike the prior art segment based method which requires an operating aperture of an entire segment, the present invention only requires an operating aperture of one pixel. Therefore, the overall system pixel yield rate is increased.
Patent TW-411725-B (TW)
Title: Organic electroluminescent devices
Inventor: KIDO JUNJI
IPC: H05B33/10
Filed: 1999-02-26
Granted: 2000-11-11
Abstract: An organic electroluminescent (EL) device includes at least one luminescent layer from an organic compound, located between an anode electrode and a cathode electrode opposed to the anode electrode, and an organic layer in adjacent to the cathode, in which the organic layer comprises at least an organic metal compound consisted of an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion. The cathode comprises a metal that has the capability to reduce the metal ions in the compound into the corresponding metal in vacuum. The cathode can be formed of a cheap and stable metal known as a wiring material. The EL device can ensure a low energy barrier in emitting electrons from the cathode electrode to the luminescent layer, a low drive voltage and a highly efficient luminescence.
Patent TW-455746-B (TW)
Title: Lithographic projection apparatus
Inventor: VAN DER LEI SIJBE ABRAHAM HART
IPC: H01L21/027
Filed: 1999-04-12
Granted: 2001-09-21
Abstract: A lithographic apparatus of the scanning type in which reticle masking blades 7 are opened at the beginning of a scan, Means are provided to compensate for an increase in the intensity density of the illumination beam as the reticle masking blades are opened. These means may comprise lamp control means 10 for controlling a compensating decrease in the lamp intensity. The reticle masking blades 70 may be manufactured of, e.g., quartz and provided with a reflective rear coating, e.g. of aluminium, so that portions of the illumination beam intercepted by the reticle masking blades are totally internally reflected.
Patent TW-I237646-B (TW)
Title: Resin composition and process for producing cured article using the same
Inventor: AOKI TOMOAKI
IPC: C08G61/08
Filed: 1999-05-14
Granted: 2005-08-11
Abstract: A resin composition comprising (a) a cycloolefin compound capable of undergoing metathesis polymerization, (b) a metathesis polymerization catalyst represented by formula (A), and (c) a filler, reinforcement, or additive; and a process for producing a cured article which comprises curing the composition. In formula (A), M represents ruthenium or osmium; X1 and X2 each independently represents an anionic ligand; L1 and L2 each independently represents a neutral electron-donating group; R1 and R2 each represents an organic group; and R3 represents hydrogen, aryl, or alkyl.
Patent TW-457206-B (TW)
Title: Apparatus and method for sealing foil material
Inventor: WILD HANS-PETER
IPC: B31B50/64
Filed: 1999-07-19
Granted: 2001-10-01
Abstract: The present invention relates to a sealing apparatus for sealing foil material, the apparatus comprising a foil conveying means and a sealing means including a sealing head which has at least one sealing position for performing the foil sealing operation, an intermediate position in which the sealing head has a predetermined distance from the sealing position, and an inoperative position in which the sealing head has a second predetermined distance from the sealing position that is greater than the first distance. Furthermore, the invention relates to a corresponding sealing method which can be carried out with the sealing apparatus, wherein the sealing head is removed from the foil material to a first distance during the further transportation of the foil material and is removed from the foil material to a second greater distance when the foil sealing operation is interrupted.