baber/WOPTO huggingface dataset:
Patent TW-442500-B (TW)
Title: Emulsion polymerization using polymeric surfactants
Inventor: HURLEY STEVEN M
IPC: C08F20/10
Filed: 1998-04-15
Granted: 2001-06-23
Abstract: An emulsion polymerization system comprising a polymeric stabilizer, wherein the polymeric stabilizer comprises one or more alpha olefin/maleic anhydride copolymers and is present in the emulsion polymerization system in an amount greater than 0 and less than 5% by weight.
Patent TW-400353-B (TW)
Title: Thermoplastic resin-coated ammonium polyphosphate and process for producing the same
Inventor: WANG GUO-FANG
IPC: C08K3/00
Filed: 1998-06-25
Granted: 2000-08-01
Abstract: Thermoplastic resin-coated ammonium polyphosphate comprises a core material which comprises ammonium polyphosphate and a thermosetting resin, a melamine monomer or a surface-treating agent; and a coating layer of a thermoplastic resin which covers the core material. The thermoplastic resin-coated ammonium polyphosphate is excellent in water resistance, resistance to acids, resistance to alkalis, resistance to ions and resistance to organic solvents and if it is incorporated into a resin composition as a component of a flame retardant used therein and the composition is formed into a molded article, the resulting article does not show any marked reduction of its mechanical strength.
Patent TW-389940-B (TW)
Title: Manufacturing method of compound semiconductor epitaxial wafer and vapor-phase growth device
Inventor: WATANABE MASATAKA
IPC: H01L21/205
Filed: 1998-08-06
Granted: 2000-05-11
Abstract: A method for fabricating a compound semiconductor epitaxial wafer having a uniform epitaxial layer-thickness distribution independently of positions of the compound semiconductor wafers placed within a reaction furnace, and a vapor phase growth apparatus for implementing the method. A group III source gas (13) is flowed from a gas inlet (14) of the reaction furnace (19) to a gas outlet (16) thereof, whereas a group V source gas (15) is supplied as dispersedly from a plurality of groups of gas discharge ports (18a, 18b, 18c) provided in a flow direction of the group III source gas (13).
Patent TW-495499-B (TW)
Title: Method for producing highly pure tetrasodium salt of ethylenediaminetetracetic acid
Inventor: CHOI CHEONG-SONG
IPC: C07C227/02
Filed: 1998-09-29
Granted: 2002-07-21
Abstract: A method for producing highly purified tetrasodium salt of EDTA with a high yield in an economic manner is disclosed. It comprises a step of crystallizing a solution containing EDTA-4Na and impurities with a mixed solvent of methanol and an alcohol other than methanol to yield highly purified crystals of tetrasodium salt of EDTA.
Patent TW-552243-B (TW)
Title: Process of forming a pattern on a substrate
Inventor: MASUKO HIDEAKI
IPC: H01J9/02
Filed: 1998-11-09
Granted: 2003-09-11
Abstract: A process for forming an inorganic material layer pattern on a substrate. The process includes the steps of transferring an inorganic powder dispersed paste layer supported on a support film to the surface of the substrate to form the inorganic powder dispersed paste layer on the substrate; forming a resist film on the inorganic powder dispersed paste layer transferred to the surface of the substrate; exposing the resist film to light through a mask to form a latent image of a resist pattern; developing the exposed resist film to form the resist pattern; etching exposed portions of the inorganic powder dispersed paste layer to form an inorganic powder dispersed paste layer pattern corresponding to the resist pattern; and baking the pattern to form an inorganic material layer pattern.
Patent TW-387827-B (TW)
Title: Rotary cylinder
Inventor: YOSHIDA SHIN
IPC: B23B31/30
Filed: 1998-12-01
Granted: 2000-04-21
Abstract: A rotary cylinder for controlling operations of a chuck to be used on a lathe or the like. The rotary cylinder compises a housing, a cylinder unit, a distributor supporting the cylinder unit in bearings fitted therein, and a seizure detecting system including a detaining mechanism for restraining the distributor from rotation relative to the housing. The seizure detecting system detects seizure between the distributor and the cylinder unit and allows the distributor to rotate relative to the housing. The distributor is capable of being fixedly held on the housing without distorting the bearings supporting the cylinder unit and of being disconnected from the housing when seizure occurs between the distributor and the cylinder unit.
Patent TW-442491-B (TW)
Title: Process for preparing carboxamido-4-azasteroids
Inventor: PANZERI ACHILLE
IPC: A61P43/00
Filed: 1998-12-30
Granted: 2001-06-23
Abstract: A process for producing a compound of formula (I), wherein the dotted lines --- independently represent a single or double bond and R, R1, R2 and -carbonylimidazole intermediates with anhydrous acids in the presence of an amine and, optionally, hydrogenating the resulting compound.
Patent TW-397710-B (TW)
Title: The plating belt manufacturing method
Inventor: DU KUEN-SUNG
IPC: B05D5/00
Filed: 1999-01-04
Granted: 2000-07-11
Abstract: This is a manufacturing method of plating belt, especially belts for a plating machine made by mixing silicon and neoprene. Since silicon has good dimensional stability and is unlikely to deform under high temperature and rubber is not slippery and has finely position stability, this belt, therefore, can be used for high precision plating requirement. During the process of plating with carriage delivery, this belt can shield the plating material surface to avoid a reaction with the plating solution and provide fine delivery position control and shielding effect. It can effectively control the plating position and quality of plating film. It can also adjust according to process variation in order to make the mixed belt into different specifications. The installation of different plating machines can be made easier by using different belts. This invention will have positive contributions to the surface treatment industry and will elevate production capability.
Patent TW-381176-B (TW)
Title: Method and apparatus for determining the viscosity of a fluid in a container
Inventor: HASTINGS CALVIN R
IPC: G01N29/02
Filed: 1999-01-27
Granted: 2000-02-01
Abstract: An apparatus for determining the viscosity of a fluid in a container (such as a pipe). The apparatus comprises a mechanism for transmitting a signal into a fluid in a container. The transmitting mechanism contacts the test container and provides the signal to the fluid in the test container. The apparatus comprises a mechanism for receiving the signal after the signal has passed through the fluid. The receiving mechanism contacts the test container and receives the signal from the fluid in the test container. The apparatus comprises a mechanism for determining the fluid in the test container from the test container from the signal after the signal has passed through the fluid and determining the fluid viscosity from the amplitude and sound velocity. The determining mechanism is connected to the receiving mechanism. The method comprises the steps of transmitting a signal into fluid. Then there is the step of receiving the signal after it has passed through the fluid. Next there is the step of determining the attenuation of the signal as the signal has passed through the fluid. Then there is the step of finding the viscosity of the fluid in the test container from the attenuation of the signal and transit time.
Patent TW-407449-B (TW)
Title: Resist stripping process
Inventor: YAKOBSON ERIC
IPC: H05K3/18
Filed: 1999-02-08
Granted: 2000-10-01
Abstract: A process for removing patterned resist from the surface of a substrate during manufacture of printed wiring boards is disclosed. The process includes the steps of contacting the patterned resist with a stripping solution solution containing an alkalinity source as well as a source of ammonium ions. The stripping solution is characterized in that it does not contain volatile organic compounds (VOCs).
Patent TW-421719-B (TW)
Title: Arrangement to recognize the contact-fault at the test of the integrated circuits
Inventor: SAVIGNAC DOMINIQUE
IPC: G01R31/26
Filed: 1999-03-03
Granted: 2001-02-11
Abstract: This invention relates to an arrangement to recognize the contact-fault at the test of the integrated circuits with many pins (5) which protrudes from a casing (8), said pins are connected with respective pads (2) on a semiconductor-body (1) of an integrated circuit. The pull-up- or pill-down-device (9), which are located between respective pads (2) and the integrated circuit hold through of a holding-current the pads (2) on a high or low potential, if at the test the related pin (5) is not contacted, so that an activation of the circuit-parts which are connected with the pin (5) can be avoided.
Patent TW-428067-B (TW)
Title: Control system for multi-pump operation
Inventor: LEE SHU-YEE
IPC: G05D16/20
Filed: 1999-04-14
Granted: 2001-04-01
Abstract: A control system, particularly adaptable to multiple-pump operations in process units is disclosed. A measured variable, such as pressure, is sensed by a master controller. The master controller, in turn, sends a signal to the driver of the individual pumps or in other ways regulates the output of the two pumps. The master controller is configured to send different signals simultaneously to the two pumps in response to a change in the measured variable. The result is that the response time of one of the pumps is faster than the other. Thus, minor deviations from the desired setpoint of the measured variable are primarily responded to by the pump configured to react faster. Dramatic upsets, resulting in a significant deviation from the desired setpoint for the measured variable, allow one pump to react fast and change its capacity dramatically to bring the measured variable back to the desired setpoint, while the other pump responds more slowly and thus maintains a reasonable forward fluid flowrate all the time to prevent a process unit shut-down. On sensing a loss of the fast -responding pump, the master controller automatically speeds up the response time of the slowly responding pump so that its capacity can be varied reasonably fast enough to maintain the measured variable at the target condition. By use of differing response times on the pumps, the tendency of the pumps to fight each other when operated by steam turbines, for example, is eliminated. Additionally, the pumps with the control system can quickly respond to large process upsets without triggering shutdown conditions of both pumps which would otherwise cause a processing unit shutdown.
Patent TW-409361-B (TW)
Title: Self-aligned contact process
Inventor: HUANG JING-XIAN
IPC: H01L21/60
Filed: 1999-05-13
Granted: 2000-10-21
Abstract: A self-aligned contact process is disclosed, which is applied in forming a contact hole structure between two circuit device structures. The processcomprises the following steps: providing a substrate having the two circuit device structures formed thereon, the circuit device structure having a top formed thereon a first dielectrics completed by a first material; forming the second dielectrics completed by the first material on said substrate and said circuit device structure; forming the first spacer material layer completed by the second material on said second dielectrics, wherein said first material and said second material have high etching aspect ratio; proceeding a first spacer etching toward said first spacer material layer to have a first spacer structure; utilizing said first spacer structure as the mask to proceed a second spacer etching toward said second dielectrics; further, acquiring a second spacer structure surrounded on the lateral face of said circuit device structure; forming a fourth dielectrics completed by the fourth material on said substrate having said second spacer structure and said circuit device structure, wherein there is high etching aspect ratio between said first material and said fourth material; and, proceeding a photolithography etching process toward said fourth dielectrics to pattern between said circuit device structure with self-alignment, and provide the contact hole structure connecting to the surface of said substrate by etching.
Patent TW-443039-B (TW)
Title: Sigma-delta modulator by using method of local nonlinear feedback loop
Inventor: HO CHIAN C
IPC: H03M3/02
Filed: 1999-05-20
Granted: 2001-06-23
Abstract: This invention is about a kind of local nonlinear feedback loop method and the improved highly stable oversampled sigma-delta modulator using this local nonlinear feedback loop method. The persecution of gain mismatch for the sigma-delta modulator can be lessened. Additionally, the problem of easy overload for the rear stage sigma-delta modulator can be solved without making the signal noise ratio of the whole system decrease. Meanwhile, by using the method of local nonlinear feedback loop as shown in this invention, the voltage signal of the whole system for the sigma-delta modulator can be decreased so as to decrease the power consumption of the whole system for the sigma-delta modulator.
Patent TW-528800-B (TW)
Title: A new method for duplicating cell organ
Inventor: JIANG HUANG-RUNG
IPC: C12N1/00
Filed: 1999-06-17
Granted: 2003-04-21
Abstract: A method is for duplicating a chloroplast of one of cell organs. This method is for division duplicating the chloroplast in a liquid medium taking advantage by of mineral springs as a cultured water, adding natural nutrient source like a soybean extract, a glucoamine, a yeast extract, and a natural amino acid solution and mixing the chloroplast for incubation thereafter by stirring and gassing in a bioreactor under fixed temperature.
Patent TW-439180-B (TW)
Title: Semiconductor structures and manufacturing methods
Inventor: RUPP THOMAS S
IPC: H01L21/308
Filed: 1999-08-04
Granted: 2001-06-07
Abstract: A method for forming a pair of MOSFETs in different electrically isolated regions of a silicon substrate. Each one of the MOSFETs has a different gate oxide thickness. A first layer of silicon dioxide is grown to a predetermined thickness over the surface of the silicon substrate. One portion of the silicon dioxide layer is over a first isolated region and another portion of the silicon dioxide layer being over a second isolated region. An inorganic layer is formed over the silicon dioxide layer extending over the isolated regions of the silicon substrate. A first portion of the inorganic layer is over the first isolated regions and a second portion of the inorganic layer is over the second isolated regions. A photoresist layer is formed over the inorganic layer. The photoresist layer is patterned with a window over the first portion of the inorganic layer. The photoresist layer covers the second portion of the inorganic layer. The inorganic layer is patterned into an inorganic mask by bringing a etch into contact with the patterned photoresist layer to selectively remove the first portion of the inorganic layer an thereby expose an underlying portion of the surface of the silicon substrate while leaving the second portion of the inorganic layer. The inorganic mask is used to selectively remove exposed portions of the grown silicon dioxide. The inorganic mask is removed. A second layer of silicon dioxide is grown over the exposed underlying portion of the silicon substrate to a thickness different from the thickness of the first layer of silicon dioxide. The silicon dioxide layers are patterned into gate oxides for each of a corresponding one of the pair of MOSFETs.
Patent TW-452684-B (TW)
Title: Cable and heat sink
Inventor: ISHII SHIGERU
IPC: H01B7/42
Filed: 1999-10-29
Granted: 2001-09-01
Abstract: To use a cable to radiate heat generated inside a wearable computer. Heat generated by a CPU 30 inside a PC body 3 is transferred to a heat conducting member 38 and is further transferred to a heat conducting sheet 22 of a cable 2 via a heat pipe 32 and a connection member 34. The heat conducting sheet 22 conducts in the longitudinal direction of the cable 2, the heat transferred via the heat collecting member 38, the heat pipe 32, and the connection member 34 while gradually releasing the heat to the exterior thereof via the coating 20 to radiate the heat from the interior of the PC body 3.
Patent TW-434788-B (TW)
Title: Self-planarized shallow trench process
Inventor: YANG FU-LIANG
IPC: H01L21/76
Filed: 1999-11-01
Granted: 2001-05-16
Abstract: A self-planarized shallow trench process is provided, which comprises: forming a planar shallow trench region by etching back and exposing the corner region of the silicon nitride layer on the active region after forming a shallow trench and depositing insulating oxide material; globally depositing one blocking layer; forming a patterned photoresist pattern without high accuracy and exposing wider active region, and removing the blocking layer on this region after the blocking layer is formed; removing the oxide material on the wider active region by wet etching after peeling off the photoresist, then removing the blocking layer and the silicon nitride layer remained by wet etching; and finally, removing the pad oxide to complete the self-planarizied shallow trench process of the present invention.
Patent TW-429475-B (TW)
Title: Method for forming interlayer insulative layers of semiconductor device
Inventor: YAMAZAKI YASUSHI
IPC: H01L21/316
Filed: 1999-11-25
Granted: 2001-04-11
Abstract: The method for forming interlayer insulative layers of a semiconductor device comprises the steps of forming the first interlayer insulative layer on a semiconductor substrate, forming a conductive layer on the first insulative layer, forming the first wiring layer by patterning the conductive layer via a photolithography process, forming the second interlayer insultive layer on the the first interlayer insulative layer and the first wiring layer, flattening a surface of the second interlayer insulative layer by a chemical and mechanical polishing method, and heat-treating the second interlayer insulative layer in a nitrogen or oxygen atmosphere at 850 DEG C to 900 DEG C.
Patent TW-469599-B (TW)
Title: DRAM-cells arrangement and its production method
Inventor: GOBEL BERND
IPC: H01L27/108
Filed: 1999-11-29
Granted: 2001-12-21
Abstract: A memory-cell includes a transistor and a capacitor. A memory-node (SP) of the capacitor is arranged in a 1st recess (V), while a gate-electrode of the transistor is arranged in a 2nd recess. An upper source/drain-region (SDo), a channel-region (KA) and an under source/drain-region (SDu) of the transistor are arranged superimposedly and are adjacent respectively on the 1st edge (Fa) of the 1st recess (V) and on the 2nd recess. At least one part of the 1st edge (Fa) is provided with a capacitor-dielectric (Ka, Kb), which has an opening in the region of the under source/drain-region (SDu), in the opening the memory-node (SP) is adjacent on the under source/drain-region (SDu). The 2nd recess of the 1st of the memory-cells can be adjacent on the memory-node (SP), which is arranged in the 1st recess (V) of the 2nd of the memory-cells. The 2nd recesses can be one portion of the word-line-trenches (GW), which extend transversely to the isolation-trenches. Above the opening is preferably arranged an isolating structure (Ia) in the 1st recess (V), which is adjacent on two adjacent of the isolation-trenches.
Patent TW-546266-B (TW)
Title: Silica glass optical material for projection lens to be utilized in vacuum ultraviolet radiation lithography, method for producing the same, and projection lens
Inventor: YAMAGATA SHIGERU
IPC: G02B1/02
Filed: 1999-12-22
Granted: 2003-08-11
Abstract: A silica glass optical material for projection lens is used in vacuum ultraviolet radiation lithography using radiation from 155 to 195 nm in wavelength, in which, the silica glass optical material is of ultrahigh purity, contains from 1 to 10 wtppm of OH groups, from 100 to 10,000 wtppm of F, and from 1x10<17> to 1x10<19> molecules/cm<3> of H2, and has a distribution in concentration of F that is axially symmetrical to the central axis. The invented silica glass optical material has high initial transmissivity to vacuum UV ray of 155 to 195 nm wavelength, high precision, high durability and excellent homogeneity.
Patent TW-I250025-B (TW)
Title: Skin care composition
Inventor: ALALUF SIMON
IPC: A61K8/72
Filed: 2000-03-06
Granted: 2006-03-01
Abstract: A topical composition and cosmetic method for treating skin conditions selected form the group consisting of wrinkling, sagging, photodamaged skin, sensitive skin, dry skin, flaky skin, red skin, irritated skin, itchy skin and age spots, the composition comprising: (a) conjugated linoleic acid, and/or derivatives thereof comprising conjugated linoleic acid moieties, in which at least 50% by weight of the conjugated linoleic acid and/or moieties, is present as the cis 9 trans 11 isomer; and (b) a dermatologically acceptable carrier.
Patent TW-546637-B (TW)
Title: Recording medium for storing linking type information and method of processing defective area using the same
Inventor: LEE KYUNG-GEUN
IPC: G11B7/0045
Filed: 2000-04-13
Granted: 2003-08-11
Abstract: A recording medium storing linking type information and a method of processing a defective area in the medium. The recording medium stores information indicating that linking is applied immediately after the defective area, distinguishing a linking type which occurs in a general incremental recording mode from a linking type which occurs after the defective area. Defective areas are detected and registered in a predetermined area (recording management data (RMD) area) before user data is recorded or while user data is being recorded in the recording medium having a plurality of continuous basic recording units, such as a digital versatile disc-rewritable (DVD-RW) in which recording and reproducing can be done repeatedly. Linking is not only applied in an incremental recording mode or in a restricted overwrite recording mode, but linking is also applied to an area immediately after the defective area which is registered in the defect list, increasing reliability of the user data. In addition, a test signal such as data, a groove wobble pattern, or a recording mark which has a test pattern, which functions as linking data is recorded in advance in a block immediately after the defective area detected during certification. If the test signal is detected after the defective area, the new user data is recorded immediately after a predetermined number of error correction code (ECC) blocks following the defective area without using linking, reducing the time for recording linking data, which is advantageous to real-time recording.
Patent TW-445369-B (TW)
Title: Heterodyne interferometer phase measurement system
Inventor: JOU CHENG
IPC: G01B9/02
Filed: 2000-04-18
Granted: 2001-07-11
Abstract: The present invention provides a heterodyne interferometer phase measurement system, especially refers to a non-contacting polarization light heterodyne phase real-time measurement system which can have a real-time measurement effect. The main feature of the present invention is to minus and amplify the optical signal from the heterodyne interferometer by a differential amplifier, so that the output signal comes from the phase-modulation of the incident light signal being transformed into the form of amplitude modulation, the phase variation can be defined by directly measuring its amplitude to thereby enhance the measurement speed and sensitivity.