Patent SG-11201811061U-A (SG)
Title: Writing to cross-point non-volatile memory
Inventor: WANG BEI
IPC: G11C11/22
Filed: 2017-06-02
Abstract: 416-6 . .410-1, 11 , 2 FIG. 4 W O 20 18/00 4998 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 January 2018 (04.01.2018) W I PO I PCT IiiimmolimionotiolooluiliolimioluovoimIE (10) International Publication Number WO 2018/004998 Al (51) International Patent Classification: Gl1C 11/22 (2006.01) HOlL 27/11507 (2017.01) G11C 11/56 (2006.01) HOlL 27/11502 (2017.01) Gl1C 14/00 (2006.01) (21) International Application Number: PCT/US2017/035762 (22) International Filing Date: 02 June 2017 (02.06.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/197,416 29 June 2016 (29.06.2016) US (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). (72) Inventors: WANG, Bei; 8000 S. Federal Way, Boise, Ida- ho 83716-9632 (US). CALDERONI, Alessandro; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). KINNEY, Wayne; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). JOHNSON, Adam; 8000 S. Federal Way, Boise, Ida- ho 83716-9632 (US). RAMASWAMY, Durai Vishak Nir- mal; 8000 S. Federal Way, Bosie, Idaho 83716-9632 (US). (74) Agent: HARRIS, Philip W.; Holland & Hart LLP, P.O. Box 11583, Salt Lake City, Utah 84147 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). (54) Title: WRITING TO CROSS-POINT NON-VOLATILE MEMORY (57) : Methods, systems, and devices for preventing disturb of untar- 405 geted memory cells during repeated access operations of target memory cells are described for a non-volatile memory array. Multiple memory cells may be in electronic communication with a common conductive line, and each mem- ory ceil may have an electrically non-linear selection component. Following an access operation (e.g., a read or write operation) of a target memory cell, untargeted memory cells may be discharged by applying a discharge voltage to the common conductive line. The discharge voltage may, for example, have a polarity opposite to the access voltage. In other examples, a delay may be 40,•-a instituted between access attempts in order to discharge the untargeted mem- 410-e ory cells. rime [Continued on next page] WO 2018/004998 Al MIDEDIMOMMIDEFIEHVIIMEIHEMOVOIS Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(11)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))