Patent SG-11201808852Y-A (SG)
Title: Dopant compositions for ion implantation
Inventor: REINICKER AARON
IPC: C23C14/48
Filed: 2017-04-11
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) ---' (19) World Intellectual Property Organization 111111110111101110101011111010111110111011111101111111011101011111101111011111 International Bureau ... ..... ..Yjd (10) International Publication Number (43) International Publication Date ;.;..;; ...., WO 2017/180562 Al 19 October 2017(19.10.2017) WIPO I PCT (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) (72) _ International Patent Classification: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, C23C 14/48 (2006.01) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FL GB, GD, GE, GH, GM, GT, International Application Number: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, PCT/US2017/026913 KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, International Filing Date: MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, 11 April 2017 (11.04.2017) NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, English TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, English ZA, ZM, ZW. Priority Data: (84) Designated States (unless otherwise indicated, for every 62/321,069 11 April 2016 (11.04.2016) US kind of regional protection available): ARIPO (BW, GH, 15/483,479 10 April 2017 (10.04.2017) US GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, 15/483,522 10 April 2017 (10.04.2017) US TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, 15/483,448 10 April 2017 (10.04.2017) US TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, Applicant: PRAXAIR TECHNOLOGY, INC. [US/US]; LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, 10 Riverview Drive, Danbury, CT 06473 (US). SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Inventors: REINICKER, Aaron; 347 Maryland Street, GW, KM, ML, MR, NE, SN, TD, TG). Buffalo, NY 14201 (US). SINHA, Ashwini, K.; 72 Planta- Published: tion Court, East Amherst, NY 14051 (US). - with international search report (Art. 21(3)) Agents: DALAL, Nilay, S. et al.; Praxair, Inc., 10 River- before the expiration of the time limit for amending the view Drive, Danbury, CT 06810 (US). claims and to be republished in the event of receipt of Designated States (unless otherwise indicated, for every amendments (Rule 48.2(h)) kind of national protection available): AE, AG, AL, AM, (74) = = (81) = = Title: DOPANT COMPOSITIONS FOR ION IMPLANTATION (57) : The present invention relates to an improved composition for ion implantation. The composition comprises a dopant source and an assist- ant species wherein the assistant species in combination with the dopant gas produces a beam current of the desired dopant ion. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition. (54) 20 17 / 1805 6 2 Al 1 11 111 1111111111 111111 11111 1 111111111 II II 11111111111111 Assistant species Weakest Bend 'FICS (A z ) Ionization Energy (eV) Weakest BDE/LE CF, C-F 5.6 16.2 0.33 CH, CH,F C-H C-H 3.5 4.4 12.6 13.1 0.35 0.34 CH,F, C-H 13.3 0.33 CHF, C-H 6.1 14.8 0.31 CH,C1 C-C1 7.5 11.3 0.31 CH,C1, C-C1 11.3 0.28 CHCI; C-C1 12.3 11.4 0.28 CH-CIF C-C1 7.2 11.7 0.27 CHF,C1 C-C1 7.7 123 026 CHM, C-C1 10.7 12.4 026 CH,Br C-Br 8.5 10.5 0.28 CH,Br, C-Br 11.7 10.5 0.25 CHBr, C-Br 10.7 0.22 CH,CN C-H 6.3 12.4 0.28 CF,CN C-F 6.3 14.0 0 39 HCN C-H 117 041 CC1F, C-C1 8.1 13.1 0 27 CCI,Fz C-C1 11.0 11.7 0.28 CC1,F C-C1 13.2 11.7 0.27 CC1, C-C1 16.0 11.5 0.26 CS: C-S 8,0 10.0 0.41 Sidi, Si-II 8.1 9.9 0.31 Geli, Ge-H 5,3 10,5 032 SiH, Si-H 5,2 11.2 0.28 Cre,H, Cre-Ge 7.6 12.5 0.23 C,H, C-C 6.4 11.6 0.33 B,H, B-H 11.0 11.4 0.30 CH,CF, C-C 113 0 35 CH,CF, C-C 113 0 33 CH,NH, C-N 9.5 036 Table 1: Select assistant species and their properties O