baber/WOPTO huggingface dataset:
Patent TW-347573-B (TW)
Title: Method for protecting leads of IC chip
Inventor: CHERN SHYH-LIH
IPC: H01L21/76
Filed: 1997-11-28
Granted: 1998-12-11
Abstract: A method for protecting the leads of an IC chip supported by a substrate and having a plurality of leads extending outwards from the chip and connecting to the substrate, the method comprising dispersing a glue on the lead portions thereby reducing the exposed line arc length of the leads, and using a compound material to cover the chip and the leads.
Patent TW-377487-B (TW)
Title: Process of isolating active area
Inventor: SUNG GUAN-CHUAN
IPC: H01L21/76
Filed: 1997-12-01
Granted: 1999-12-21
Abstract: This invention provides a process of isolating active area of semiconductor substrates, which includes wherein: (a) removing a portion of surface area of semiconductor substrate to define the active area; (b) forming an oxide on the active area; (c) forming a nitride layer over the oxide, wherein the nitride layer is acting as the mask layer; and (d) performing the ion doping process to form an oxide over the substrate for isolating the active area.
Patent TW-358286-B (TW)
Title: Ring-trip circuit
Inventor: WALKER HERBERT M
IPC: H04M3/22
Filed: 1997-12-12
Granted: 1999-05-11
Abstract: A ring-trip circuit monitors the voltage developed across a source resistor coupled to one of the leads of the subscriber line circuit, regardless of the ringing frequency of the ringing voltage applied to the line circuit, and irrespective of the polarity of the DC loop current developed in the line. In response to detecting a prescribed threshold level of the source resistor voltage-indicating that the customer has answered the call, the ring-trip circuit provides a digital output that is read by the control equipment of the central office to terminate the ringing voltage.
Patent TW-336973-B (TW)
Title: Submerged drill impact device
Inventor: NAKAYAMA KANAME
IPC: E21B10/36
Filed: 1998-02-06
Granted: 1998-07-21
Abstract: A submerged drill impact device in which the upper end of a piston case (1) containing a piston therein connects with an auxiliary top (17) connected with a connector accessory, and the lower end connects with an auxiliary driver (5) capable of movably housing an impact drill (3), which is characterized in that the connector accessory (18) and the auxiliary top (17) form into one body, and the connection of the piston case (1) and the auxiliary top (17) and the connection of the piston case (1) and the auxiliary driver (5) enable the connection portions of the auxiliary top (17) and the auxiliary driver (5)to form a polygon shaft (19) or spline shaft (25), and the connection portion of the piston case (1) to form a recess (20) capable of inserting into the polygon shaft (19) or spline shaft (25) , the boundary portion of the insertion forming a pin hole (21) in a way capable of crossing the two elements, and removably inserting the pin (22) of the key into the pin hole (21).
Patent TW-526252-B (TW)
Title: Solid compositions, their preparation process and their use
Inventor: DEVLIN BRIAN GERRARD
IPC: C09K11/06
Filed: 1998-02-10
Granted: 2003-04-01
Abstract: Solid-state fluorescent composition comprising at least one host chromophore selected from the group consisting of a benzo[4,5]imidazo[2,1-a]isoindo-11-ones and an effective amount of at least one guest chromophore, and if desired a polymer C, wherein the emission spectrum of the host chromophore overlaps with the absorption spectrum of the guest chromophore, and wherein (a1) the host chromophore is covalently linked to a polymer backbone A (""host polymer""), and/or (a2) the guest chromophore is covalently linked to a polymer backbone B (""guest polymer"").
Patent TW-368670-B (TW)
Title: Circuit breaker
Inventor: HOSOGAI SETSUO
IPC: H01H73/02
Filed: 1998-04-30
Granted: 1999-09-01
Abstract: The invention related to a breaker providing the on/off status for both movable and fixed terminals which can be firmly judged from the outside by an indicator. The circuit breaker comprises the insulation frame with external cap and the base and the handle installed inside of the insulation frame for ON/OFF operation from the outside; the fixed contact installed on the base of the insulation frame; the movable contact for applying contact exit operation opposite to the fixed contact; the recession formed on surface of external cap for driving the driving component of movable contacts in the breaker; and the indicator accommodated in the recession connecting to the driving components to indicate the contact status between the movable contact and fixed contact.
Patent TW-377460-B (TW)
Title: Central coil design for ionized metal plasma deposition
Inventor: HONG LIUBO
IPC: C23C14/40
Filed: 1998-05-15
Granted: 1999-12-21
Abstract: In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.
Patent TW-393658-B (TW)
Title: Plasma display panel with a low startup voltage and its startup method
Inventor: LIN JIU-SHAN
IPC: H01J15/00
Filed: 1998-06-15
Granted: 2000-06-11
Abstract: A plasma display panel with a low startup voltage is composed of two parallel panels, an ionized gas between the two panels, four electrodes on both panels, and a display control circuit electrically coupled to the four electrodes to control their operations. The first and the second electrode are parallel to the first panel; the third electrode is vertical to the first electrode and the second electrode on the second panel. The fourth electrode is parallel to the adjacent side of the first electrode. Each of the three electrodes projected to the plane area formed by the first and second electrode forms a display unit for controlling the plasma inside. The first and fourth electrodes are used to produce a start-up plasma; the first and second electrodes disperse to the entire display unit and drive the plasma back and forth to maintain the display function.
Patent TW-503637-B (TW)
Title: A telecommunications system for providing both narrowband and broadband services to subscribers; subscriber equipment; a shelf therefor; a replaceable lowpass filter unit; line termination equipment; network termination equipment telecommunication
Inventor: CZERWIEC RICHARD MARION
IPC: H04L12/54
Filed: 1998-09-09
Granted: 2002-09-21
Abstract: An architecture, as well as various components, of an asynchronous transfer mode (ATM) subscriber access multiplexer (ASAM) system can be implemented using an xDSL (x-digital subscriber line) using DMT (discrete multitone) or CAP (carrierless amplitude phase modulation) between a plurality of subscribers and a corresponding plurality of line termination equipment in a shelf that also includes network termination equipment for connection to an ATM network. The line termination and network termination equipment are interconnected by a bus internal to the shelf for providing subscriber access. Separate lowpass filters are provided at each end of a twisted wire pair between the shelf and each subscriber equipment. A shelf can be used as a hub for connecting to a remote shelf that includes the line termination equipment for connection to subscribers. Although the internal bus of the shelf is shown in a non redundant embodiment, an increased level of equipment protection can be provided by placing one half of a redundant equipment pair in one shelf and the other half in the other shelf and sharing network termination equipment between such shelves.
Patent TW-415004-B (TW)
Title: Manufacture of low-k inter-metal dielectric layer
Inventor: YANG TZUNG-RU
IPC: H01L21/76
Filed: 1998-07-10
Granted: 2000-12-11
Abstract: This invention relates to a method of fabricating an inter-metal dielectric layer. The inter-metal dielectric layer is a polymer with low dielectric constant such that no damage occurs in a via hole. A patterned conductive layer is used as an interconnect structure. An IMD1, IMD2 and IMD 3 are subsequently deposited, and an inter-metal dielectric layer is formed. The IMD1 is made from polymer with low dielectric constant, the IMD 2 is made of silicon nitride, and the IMD3 is formed by silicon oxide. The IMD3 is first planarized and then patterned to form an opening by a photoresist. Using the IMD3 as a hard mask, a via hole is formed within the IMD2 and IMD3. The IMD2 is used to protect the IMD1 to prevent damage when the photoresist is removed by oxygen plasma.
Patent TW-392170-B (TW)
Title: Semiconductor integrated circuit device
Inventor: MAENO HIDESHI
IPC: G11C11/413
Filed: 1998-08-03
Granted: 2000-06-01
Abstract: The present invention provides a semiconductor integrated circuit device comprising testing circuit which can detect the failure of internal memory circuit in the early stage. When the first testing mode for shift mode signal SM as ""1"" and testing mode signal TM as ""1"", the comparison control signal CMP is ""1"" which means the test is effective; while ""0"" indicating failure, the comparison result of input data D and the expectation data EXP ( the output of comparator 21 ), and the AND operation result of serial input SI and latch data ( data output Q of D-FF 27 ) are sent to D input terminal of D-FF 27 through the NAND gate 28, 29, AND gate 30 and selector 26.
Patent TW-393755-B (TW)
Title: The electrostatic protecting structure of semiconductor
Inventor: CHEN WEI-FAN
IPC: H01L27/02
Filed: 1998-09-02
Granted: 2000-06-11
Abstract: An electrostatic protection structure of semiconductor is composed of an SCR and a shunt component. The shunt component can shunt the structure in order to prevent SCR from being triggered by the low current at the initial stage of current generation. As the current passing through the electrostatic protecting structure is larger than the triggered current, SCR will be triggered to enhance the triggered current requirement of SCR in order to normally operate the integrated circuit.
Patent TW-467905-B (TW)
Title: Process for removing polysorbitols from sorbitan esters
Inventor: BARNHORST JEFF A
IPC: C07D307/20
Filed: 1998-10-06
Granted: 2001-12-11
Abstract: A process for removing polyol impurities from a sorbitan ester solution involving: (a) providing a sorbitan ester solution containing polyol impurities; (b) adding to the sorbitan ester solution a clarifying-effective amount of a silica component; (c) adsorbing the polyol impurities from the sorbitan ester solution onto the silica to form a mixture of sorbitan ester and polyol-containing silica; and (d) removing the polyol-containing silica from the sorbitan ester solution.
Patent TW-426967-B (TW)
Title: Fabrication method of node contact hole
Inventor: LIN GUO-CHI
IPC: H01L21/768
Filed: 1998-10-15
Granted: 2001-03-21
Abstract: This invention is about the fabrication method of node contact hole and includes the followings. A substrate is provided, on which a dielectric layer is formed, and a conduction layer is formed on the dielectric layer. After that, part of the conduction layer is stripped to form a taper. Then, the node contact hole is opened. The feature of this invention is to open a taper on the conduction layer such that the production cost can be reduced. Additionally, the drawbacks such as the non-uniform peripheral sidewall of the node contact hole, which is caused by the conventionally known large thickness of dielectric layer, can be solved.
Patent TW-400624-B (TW)
Title: The method of manufactures the metal dieletrics
Inventor: YOU JIA-JIE
IPC: H01L21/311
Filed: 1998-11-23
Granted: 2000-08-01
Abstract: A method of manufactures the metal. To etch the Inter-Metal Dielectric (IMD) on the inter-metal dielectric of the flowable oxide that uses the photoresist layer of defined pattern as the mask layer. It then forms the metal. Next, to use the plasma formed by the mixing gas containing the moisture and the tetrafluomethane to punch through the photoresist layer. Besides, to wash the chip with the solvents to remove the residual photoresist layer after removing the punch through of the plasma.
Patent TW-520989-B (TW)
Title: Pharmaceutical composition for treating dementia, dementia of the Alzheimer's type, dyskinesias and behavioral manifestations of mental retardation, conduct disorder and autistic disorder
Inventor: WATSKY ERIC JACOB
IPC: A61K31/496
Filed: 1998-12-15
Granted: 2003-02-21
Abstract: A pharmaceutical composition for treating a psychiatric condition or disorder selected from anxiety disorders such as panic disorder, posttraumatic stress disorder and phobias, psychotic episodes of anxiety, anxiety associated with psychosis, psychotic mood disorders such as severe major depressive disorder and mood disorders associated with psychotic disorders such as acute mania or depression associated with bipolar disorder, schizophrenia, behavioral manifestations of mental retardation, conduct disorder or autistic disorder, dementias such as dementias of the Alzheimer's type, and dyskinesias such as drug induced and neurodegeneration based dyskinesias in a mammal, including a human, comprising a pharmaceutically effective amount of a compound of the formula or a pharmaceutically acceptable acid addition salt thereof, wherein n, X, Y and Ar are as defined above.
Patent TW-498180-B (TW)
Title: Method of forming ceramic capillary rib, ceramic paste used therefor, and apparatus for forming same
Inventor: KUROMITSU YOSHIROU
IPC: H01J9/28
Filed: 1999-01-29
Granted: 2002-08-11
Abstract: A paste film 11 is formed by coating a paste onto the surface of a substrate 10. In a state in which comb-teeth 12b formed on at least a portion of the periphery of a blade 12 is thrust into the paste film 11, the blade 12 or the substrate 10 is moved in a certain direction, thus forming ceramic capillary ribs 13 on the substrate surface. The paste should preferably contain from 30 to 95 wt.% glass powder or mixed glass/ceramics powder, from 0.3 to 15 wt.% resin, and from 3 to 70 wt.% solvent mixture (a solvent, a plasticizer and a dispersant), and the ceramic ribs on the substrate should preferably have an aspect ratio of from 1.5 to 10. The blade should preferably have a pitch P, a gap w and a depth h as expressed by 0.03 mm ≤ h ≤ 1.0 mm and w/p ≤ 0.9, and ribs can be formed on an insulating layer by keeping the same spaced apart from the substrate surface.
Patent TW-467937-B (TW)
Title: Styrene resin tubular film, laminate, and container
Inventor: UCHIDA TAKAAKI
IPC: C08L25/04
Filed: 1999-03-26
Granted: 2001-12-11
Abstract: A styrene resin tubular film which is obtained by processing a material containing syndiotactic styrene polymer and having a melt index (MI) of 0.5-20 and a crystallization temperature of less than 236 DEG C. The film has a degree of crystallinity of less than 30% and an elongation at rupture represented by the sum of percent elongation in the longitudinal direction and percent elongation in the lateral direction of 15% or more. The film has excellent properties in terms of processability and adhesion in the thermolamination step, thermoformability, and in-plane impact strength. A laminate including a layer (A) formed of the above film and a styrene resin sheet layer (B) exhibits excellent thermoformability and hot-oil resistance, and can be recycled, to thereby enable manufacture of containers having excellent heat resistance and hot-oil resistance.
Patent TW-480659-B (TW)
Title: Method for controlling the critical dimension of the mask in dual damascene processing using spin-on-glass process
Inventor: LAI YUNG-JR
IPC: H01L21/768
Filed: 1999-04-02
Granted: 2002-03-21
Abstract: The present invention provides a method for controlling the critical dimension of the mask in the dual damascene processing, which at least includes providing a semiconductor structure with at least one semiconductor device; next, spin-on a dielectric material on the surfaces of the semiconductor structure and the semiconductor device; and, forming a mask layer on the surface of the dielectric material.
Patent TW-I221828-B (TW)
Title: Process for preparing of diborane
Inventor: RAJORIA DALBIR S
IPC: C01B33/04
Filed: 1999-04-09
Granted: 2004-10-11
Abstract: BF3, CO2 or both are removed from a mixture containing these gases with B2H6 by contacting the mixture with an inorganic hydroxide such as LiOH, B2H6 is synthesized by contacting BF3 with KBH4.
Patent TW-434556-B (TW)
Title: Self-test method for memory
Inventor: JIAN PIAN
IPC: G11C29/48
Filed: 1999-05-11
Granted: 2001-05-16
Abstract: This invention proposes a kind of self-test method for memory. Especially, under the condition of very long data length, time-division-multiplexed-testing that combines tester with probe is used to obtain the damaged bit position of the embedded type memory and to repair the damaged bit stated above. The advantage of the present method is that, by decreasing the probe pad, the wafer area can be reduced and the testing time can also be decreased. Additionally, the testing cost is reduced.
Patent TW-408499-B (TW)
Title: The manufacture method of MOSFET and the structure thereof
Inventor: YANG YUNG-CHANG
IPC: H01L29/772
Filed: 1999-05-14
Granted: 2000-10-11
Abstract: A kind of manufacture method of MOSFET and the structure thereof. This invention at least comprises first to provide one semiconductor substrate having gate structure, and form the first spacer on the sidewall of the gate. Then, form one lightly doped region on the substrate using the gate and the first spacer as the mask. Finally, using the gate, the first spacer and the second spacer as the mask to form one heavily doped region inside the substrate.
Patent TW-562816-B (TW)
Title: Thermoplastic moulding compositions based on specific highly effective graft polymer components
Inventor: EICHENAUER HERBERT
IPC: C08F279/04
Filed: 1999-07-01
Granted: 2003-11-21
Abstract: The invention provides thermoplastic moulding compositions of the ABS type containing specific highly effective graft polymer components which are obtained by emulsion polymerization using specific initiator systems and observing defined reaction conditions.
Patent TW-392031-B (TW)
Title: Fitting component
Inventor: SALICE LUCIANO
IPC: E05D5/08
Filed: 1999-07-21
Granted: 2000-06-01
Abstract: A fitting component, preferably for furniture, such as a hinge bowl element is fixed by screws passing through holes in said fitting component. The screws are insertable in pre-drilled holes of a carcass element or a door. To facilitate the pre-assembly of the fitting component in the correct position in a simple and quick fashion the fixing screws are pro-vided with thread -free sections at the ends of their shafts, the diameter of which corresponds to the diameter of the pre-drilled holes. The fixing screws are also provided with a threaded section which forms a friction-log connection with a fixing hole, preferably with a beaded fixing hole of the fitting component, allowing the thread-free sections to pass through the holes of the fitting component.
Patent TW-457370-B (TW)
Title: An angular rate sensor
Inventor: FELL CHRISTOPHER PAUL
IPC: G01C19/5684
Filed: 1999-10-01
Granted: 2001-10-01
Abstract: An angular rate sensor or gyro includes a ring-like resonator (1) mounted by support beams (2) extending from the inner periphery of the ring (1) to a boss (4) on a base (3). The support beams (2) are flexible and allow the resonator (1) to vibrate in response to electrostatic drive means (6, 8) in a substantially undamped oscillation mode to permit the resonator to move relative to the support means in response to turning rate. The support beams (2) and resonator (1) are made from crystalline silicon. Electrostatic sensing means (7, 9) are provided for sensing movement of the resonator (1). The drive means (6, 8) and sensing means (7, 9) have plate-like elements made from crystalline silicon having surfaces located substantially normal to the plane of the resonator (1) at a spacing from the adjacent outer periphery of the resonator (1). The ratio of the thickness of the resonator (1) at the outer periphery (1b) to the width of the spacing (11) between the periphery (1b) and the element surfaces (10) is in the range of from 10:1 to 40:1.
Patent TW-445627-B (TW)
Title: Electrostatic discharge buffer apparatus
Inventor: LI SHU-JIUAN
IPC: H01L27/02
Filed: 1999-10-04
Granted: 2001-07-11
Abstract: This invention is about the electrostatic discharge buffer apparatus that includes a gate, the first doped region, the second doped region, the third doped region, and a resistance region. The electrostatic discharge buffer apparatus is installed on a semiconductor substrate and is connected in parallel with an electrostatic discharge protective apparatus such that it is connected in between a bonding pad and a grounding line. The gate is insulated and is installed on the semiconductor substrate such that it is located in between the first and the second doped regions, which are installed in this semiconductor substrate. The third doped region also is installed in the semiconductor substrate and is coupled with the bonding pad. In addition, a resistance layer is formed in between the third doped region and the second doped region such that when there is a electrostatic discharge stress reaching the bonding pad, this resistance layer is capable of assuring the release of the electrostatic discharge stress through the electrostatic discharge protective apparatus.
Patent TW-436982-B (TW)
Title: Method for filling up a defect gap in a semiconductor structure
Inventor: GUO JIAN-LI
IPC: H01L21/762
Filed: 1999-10-11
Granted: 2001-05-28
Abstract: A method for filling up a defect gap in a semiconductor structure is provided by which defect products due to a greater calibration error shift generated in the process can be remedied. The method of the present invention comprises using a low pressure chemical vapor deposition to form a dielectric material filled into the gap, and then etching back the filling layer to maintain the surface smooth. The filling layer is deposited in a thickness of about 300 angstrom, which can fill up a gap with a width below 600 angstrom. By the present invention, the shift tolerance of a contact window can increase by 600 angstrom.
Patent TW-459148-B (TW)
Title: Circularly polarized fiber for switching
Inventor: ISLAM MOHAMMED
IPC: H04B10/2543
Filed: 1999-11-09
Granted: 2001-10-11
Abstract: The invention is directed to circularly polarized single mode waveguide fiber and to high data rate, multilplexed transmission systems that employ this fiber. The circularly polarized waveguide fiber attenuates the non-linear effects present in such high performance transmission links. In particular, self phase modulation is attenuated by more than 30% and four wave mixing is essentially eliminated. This latter effect occurs because four wave mixing does not occur when a multiplexed link is made of a plurality of circularly polarized waveguide fibers which are arranged so that adjacent fibers have opposite circular polarization. The circularly polarized fiber enhances the non-linear effect of cross phase modulation, a feature that can be used in optical switching components associated with the transmission link. In addition, the strength of the XPM in CPF is independent of the relative polarization states of the signal and control pulses.