baber/WOPTO huggingface dataset:
Patent TW-218378-B (TW)
IPC: A61K31/404
Filed: 1990-11-22
Granted: 1994-01-01
Abstract: New isoindolone derivatives of general formula (I) in which the radicals R are hydrogen atoms or, together, form a bond, the symbols R' are phenyl radicals which may be substituted with a halogen atom or a methyl radical at position 2 or 3, X is an oxygen or sulphur atom or a radical N-R3, R3 being H, alkyl, optionally substituted, or dialkylamino, R1 is phenyl, optionally substituted, cyclohexadienyl, naphthyl or heterocyclic, R2 is H, halogen, OH, alkyl, aminoalkyl, alkylaminoalkyl, dialkylaminoalkyl, alkyloxy, alkylthio, acyloxy, carboxy, alkyloxycarbonyl, optionally substituted, benzyloxycarbonyl, amino or acylamino, in their (3aR,7aR) forms or in the (3aRS,7aRS) form or mixtures thereof, where appropriate their salts where they exist and their preparation. 
<??>The new derivatives according to the invention are especially advantageous as substance P antagonists. 
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Patent TW-242657-B (TW)
IPC: D06B3/34
Filed: 1993-02-22
Granted: 1995-03-11
Abstract: A windable substrate (2) is transported to a substrate carrier (40) and wound thereon. To this end the substrate (2) is first held in a defined storage position. In this storage position the substrate carrier (40) is moved into a threading position (407) and brought into engagement with the substrate. The substrate is then automatically threaded around the substrate carrier (40). After completion of the threading operation, the substrate carrier (40) is moved into a winding position (406) in which the substrate (2) is wound onto the substrate carrier (40). The advance rate with which the substrate (2) is motor-driven to the substrate carrier (40) is controllable. The substrate carrier (40) is motor-driven in a controllable manner, specifically with uniform torque and in dependence on the advance rate with which the substrate (2) is transported to the substrate carrier (40). After completion of the winding operation, the substrate (2) is cut off and the substrate end forming part of the reel is automatically fixed on the reel, whilst the other substrate end is again held in the defined storage position. <IMAGE>
Patent TW-278080-B (TW)
IPC: C07K1/10
Filed: 1993-03-23
Granted: 1996-06-11
Abstract: Disclosed herein are peptide derivatives of the formula A-B-D-CH2CH{CH2C(O)R<1>}C(O)NHCH{CR<2>(R<3>)COOH}C(O)-E wherein A is a terminal group, for example an optionally substituted phenylalkanoyl, and B is a N-methyl amino acid residue; or A and B together form a saturated or unsaturated alkylaminocarbonyl; D is an amino acid residue; R<1> is alkyl, cycloalkyl, a monosubstituted or a disubstituted amino; R<2> is hydrogen or alkyl and R<3> is alkyl, or R<2> is hydrogen and R<3> is phenylalkyl, or R<2> and R<3> are joined to form a cycloalkyl; and E is a terminal unit, for example, an alkylamino or a monovalent amino acid radical such as NHCH(alkyl)C(O)OH. The derivatives are useful for treating herpes infections.
Patent TW-313575-B (TW)
IPC: C07F9/02
Filed: 1993-11-27
Granted: 1997-08-21
Abstract: The beta crystalline modification of 2,2',2''-nitrilo[triethyl-tris-(3,3',5,5'-tetra-tert-butyl-1,1'-biphenyl-2,2'-diyl) phosphite] is obtained by crystallizing said compound from the melt at elevated temperatures. The beta crystalline form is an effective process stabilizer for polyolefins, particularly polypropylene.
Patent TW-354311-B (TW)
Title: Composite polyester film with barrier properties
Inventor: PRISSETTE MICHEL
IPC: C08J7/048
Filed: 1995-02-15
Granted: 1999-03-11
Abstract: A polyester-based, biaxially drawn composite film characterized in that it comprises a 5 <mu>m to 50 <mu>m polyester base film which is coated on at least one of its two faces with a layer of polyvinyl alcohol of thickness lower than or equal to 0.3 <mu>m; the said base film has mean surface roughness Rz lower than or equal to 0.30<mu>m; in per cubic millimeters of the face of the base film, there are, less than 20 peaks with height equal to or more than 1 <mu>m, and less than 150 peaks with height between 0.4 and 1 <mu>m; the said composite film having a permeability to oxygen, measured at 23 DEG C at 50 relative humidity lower than or equal to 3 cm<3>/m<2>/24h; wherein the polyester being selected from poly para-dibenzoate alkyl diol or polynaphthydicarboxylate alkyl diol.
Patent TW-255083-B (TW)
Title: Method of timer control
Inventor: SHYU SHYH-BIN
IPC: H04L9/32
Filed: 1995-03-24
Granted: 1995-08-21
Abstract: A method of timer control by software broadcasting, which broadcasts the current time to the end user by software and compares with the use due date to judge if the user is still before the rent dead line, if not, then some control sequences are executed, includes: (1) broadcasting current time signal; (2) receiving current time signal; (3) reading use due date data of end user; (4) comparing current time signal if it is over the use due date (5) executing due control sequence.
Patent TW-304203-B (TW)
IPC: C07C25/24
Filed: 1995-04-26
Granted: 1997-05-01
Abstract: A liquid crystalline compound having a high elastic constant ratio (K33/K11) and an immproved solubility thereof in other liquid crystal materials, have the formula:- (1) : <CHEM> wherein Q represents -CF3, -CF2H or -CFH2; A1, A2 and A3 each independently represent a trans-1,4-cyclohexylene group, a 1,4-phenylene group wherein one or more hydrogen atoms on the ring may be replaced by F, C l  or CN, a pyridine-2,5-diyl group or a 1,3-pyrimidine-2,5-diyl group; ring B represents a 1,4-phenylene group or a trans-1,4-cyclohexylene group which can be replaced at its lateral position by groups L, and L2 noted below; Z1, Z2 and Z3 each independently represent a covalent bond or a group -CH=CH-, -C=C-, -OCO-, -COO-, -CH2O-, -OCH2-, -(CH2)2- or -(CH2)4-;  l  and m each independently represent 0 or an integer of 1 to 5; o and p each independently represent 0 or 1; L1 and L2 each independently represent H, F or C l ; and L3 represents a hydrogen or halogen atom, -CN, -CF3, -CF2H, -CFH2, -OCF3, -OCF2H, a C1-C10 alkyl group or a C2-C10 alkenyl group [wherein optional non-adjacent methylene groups (-CH2-) in the alkyl group or the alkenyl group may each independently be replaced by -O-, -S-, -CO-, -OCO- or -COO-].
Patent TW-269034-B (TW)
Title: Hand-held electrical information panel and display control method thereof
Inventor: SHYR DER-LONG
IPC: G06Q40/00
Filed: 1995-06-26
Granted: 1996-01-21
Abstract: A hand-held electrical information panel showing real-time financial market price includes keyboard, real-time unit, random memory, read only memory, flash memory, signal chip microcomputer, liquid crystal display, display driving unit, signal decoder and radio receiver, in which: keyboard with multiple keys installed on machine body and interconnected with single chip microcomputer, supplied as device of whole electrical information panel selection adn application; single chip microcomputer as center of the whole, and executing control flow of whole system, connected with keyboard, and accepting keyboard instruction, accepting data of signal decoder, and interconnecting with real-time unit, random memory, flash memory, read only memory and display driving unit; real-time unit connected with single chip microcomputer, and supplying operation date, auto power ON/OFF and alarm; random access memory allocated in machine body, used for storing whole large data, and connected with single chip microcomputer; read only memory connected with single chip microcomputer, as device for storing character shape data; flash memory for storing dynamic data, and connected with single chip microcomputer; display driving unit for driving data display and graphic rendering of display, controlled by single chip microcomputer, and then driving control liquid crystal display; liquid crystal display controlled by the above display driving unit, displaying data and graph; signal decoder connected with radio receiver in series for processing signal, then transmitting connection to single chip microcomputer; radio receiver for receiving signal and transmitting connection to signal decoder; the above single chip microcomputer, with its address bus, address control line, data bus, real-time time unit, random memory, flash memory, read only memory and display driving unit connection, by the transmission of the address bus, data bus and address control line, and according to instruction of keyboard transmitted to single chip microcomputer or message received by radio receiver, output to single chip microcomputer via signal decoder, controlling display driving unit and liquid crystal display as device of one electrical panel.
Patent TW-277147-B (TW)
Title: Improved TFT, method of making and matrix displays incorporating the TFT
Inventor: Scott h holmberg
IPC: G02F1/1343
Filed: 1995-08-07
Granted: 1996-06-01
Abstract: Improved thin film transistors to reduce defects in the devices incorporating the transistors, including active matrix displays. A first improvement is accomplished by forming a dual insulator layer over the bottom metal layer, which can be the gate line and also the row line in an active matrix display. The first insulator layer is formed by anodizing the metal layer and the second insulator layer is deposited onto the first layer. The dual insulator structure layer can be reanodized to eliminate the effect of pinholes. A second improvement includes providing an interdigitated transistor structure to increase the channel width, minimize internal shorting and minimize the drain capacitance. The interdigitated structure includes at least one source or drain finger formed between at least two drain or source fingers, respectively. A shorted source finger can be disconnected to maintain an operative transistor. A further improvement is provided when forming an active matrix display storage capacitor utilizing the dual insulator layer. A redundant column line can be formed utilizing a second overlying metal layer. A defect masking transistor also can be coupled from each pixel to the previous gate or row line.
Patent TW-275155-B (TW)
Title: A receptacle equipped with switched connectors
Inventor: KIMURA KAZUHIRO
IPC: H01R13/648
Filed: 1995-10-04
Granted: 1996-05-01
Abstract: - A design of ring type groove is surrounded and in front of the isolated materials for installing a thrust spring arm of connectors - An open slot on the thrust spring arm is for guiding a shelter cover and contacting electrical signal - Arising on the surface of the shelter cover for contacting electrical signal.
Patent TW-313705-B (TW)
Title: Manufacturing method of field effect device with fully overlap gate structure
Inventor: UENG JIUNN-WENN
IPC: H01L27/105
Filed: 1996-01-15
Granted: 1997-08-21
Abstract: A manufacturing method of metal oxide semiconductor field effect transistor(MOSFET) comprises of the following steps: (1) on silicon semiconductor substrate forming field oxide needed for isolating active area, used for isolating active device; (2) forming gate oxide of MOSFET; (3) depositing first polysilicon and inter polysilicon oxide(IPO), then by photolithography and etch technology etching the above IPO and first polysilicon to form gate electrode; (4) forming N- lightly source/drain; (5) depositing second polysilicon and by plasma etch technology performing anisotropical etchback to the above second polysilicon, so as to form polysilicon spacer on the above gate electrode side; (6) removing the above IPO; (7) depositing one dielectric, and by etch technology performing anisotropical etchback to the above dielectric, so as to form dielectric spacer on the above polysilicon spacer side; (8) by ion implantation forming N+ source/drain.
Patent TW-377464-B (TW)
Title: Method of increasing the surface area of capacitor construct
Inventor: Xu yong-yi
IPC: H01L21/822
Filed: 1996-04-15
Granted: 1999-12-21
Abstract: This invention relates to a method of increasing the surface area of capacitor, the steps therefor comprising: (a) forming a polysilicon layer on top of the oxide of the substrate to define the pattern of contact hole and etching part of the oxide and the first polysilicon layer to form the contact hole; (b) forming the second polysilicon layer over the first polysilicon layer and contact holes; (c) forming a rugged polysilicon layer over the second polysilicon layer, wherein the polysilicon layer surface area is to be used as the capacitor; (d) etching away part of the rugged polysilicon layer, the second polysilicon layer and the first polysilicon layer to expose the lateral side of the first polysilicon layer and part of the oxide. The main purpose is to increase the surface area of capacitor by raising the surface area of rugged polysilicon layer with the first polysilicon layer and exposing the lateral side of the first polysilicon layer thus making it suitable for manufacturing process of capacitors with 0.38 micron.
Patent TW-336271-B (TW)
Title: Solar generator and an air conditioner with such a solar generator
Inventor: ONITSUKA KEIGO
IPC: F24F5/00
Filed: 1996-05-21
Granted: 1998-07-11
Abstract: An air conditioner, including: air conditioning section, for cycling of the refrigerant for heat exchange in the outer unit outside the air conditioner and the inner unit inside the air conditioner, for operation of the air conditioniner inside; power generation section outside the air conditioner, for gathering of solar light for generation of power energy; and display section, for display of operation information for generation of aforementioned power.
Patent TW-307905-B (TW)
Title: Method of forming memory cell by corrugated oxide spacer
Inventor: SHIAH LIANG-JIUH
IPC: H01L21/77
Filed: 1996-05-29
Granted: 1997-06-11
Abstract: A manufacturing method of stack DRAM comprises of the steps: (1) on silicon semiconductor substrate forming oxide for isolating field transistor; (2) forming field effect transistor and word line, in which the above field effect transistor includes gate oxide, gate electrode, and source/drain;(3) forming one non-doped silicate glass; (4) forming one silicon nitride; (5) forming alternative layers deposited from PE-oxide and thermal CVD oxide;(6) by lithography technology on capacitor region forming photoresist pattern; (7) by etch technology etching the above alternative layer, in which the above plasma etch stops on the above silicon nitride layer; (8) by HF solution laterally etching one portion of the above PE-oxide and thermal CVD oxide, so as to form cavity between the above silicon nitride layer and second thermal CVD oxide, the above second thermal CVD oxide and third thermal CVD oxide, then removing the above photoresist pattern; (9) by etch technology in capacitor region etching the above silicon nitride and non-doped silicate glass to form memory cell contact of field effect transistor; (10) forming one first polysilicon to fill the above cavity, and crossing the above memory cell contact; (11) by lithography and etch technology on the above capacitor region etching the above first polysilicon to form storage node of capacitor;(12) forming one capacitor dielectric; (13) forming one second polysilicon which is doped and conductive; (14) by lithography and etch technology etching the above second polysilicon and capacitor dielectric to form capacitor.
Patent TW-501912-B (TW)
Title: Yoghurt containing Bifidobacterium strains and process for producing the same
Inventor: AKAHOSHI RYOICHI
IPC: A23C9/127
Filed: 1996-05-29
Granted: 2002-09-11
Abstract: The invention relates to a yoghurt simultaneously contained Lactobacillus and Bifidobacteria strains independently comprises catechins and/or tocopherols to thereby atechins and/or tocopherols each in an amount of about 0.1 to 2,000 ppm to a yoghurt containing Bifidobacterium to thereby improve the survival of the Bifidobacterium strains. Further, when the yoghurt is added with refined fish oil, an additional effect of suppressing the generation of an offensive odor due to the fish oil can be achieved in addition to increase bacterial survival. Thus the stability of the qualities of the yoghurt can be improved.
Patent TW-505639-B (TW)
Title: (2-morpholinylmethyl)benzamide derivatives, their preparation and pharmaceutical composition containing the same
Inventor: VAN DAELE GEORGES HENRI PAUL
IPC: A61K31/5375
Filed: 1996-06-04
Granted: 2002-10-11
Abstract: The present invention concerns novel (2-morpholinylmethyl)benzamide derivatives having the formula the pharmaceutically acceptable addition salts and the stereochemically isomeric forms thereof, wherein R1 is C1-6 alkyl; R2 is halo; R3 is hydrogen; L is a radical of formula R4-C(=O)-Alk- (a); wherein each Alk is independently C1-12 alkanediyl; R4 is hydrogen, C1-6 alkyl, amino, mono- or di(C1-6 alkyl)amino; 1-piperidinyl; 1-pyrrolidinyl; 1-piperazinyl or 1-piperazinyl substituted with l or 2 substituents selected from C1-4 alkyl or phenyl. It further relates to pharmaceutical compositions comprising them, processes for preparing said compounds and compositions, and the use thereof as a medicine, in particular in the conditions involving a decreased gastric emptying.
Patent TW-399380-B (TW)
Title: System and method for optimal virtual path capacity dimensioning with broadband traffic
Inventor: MALOMSOKY SZABOLCS
IPC: H04L12/64
Filed: 1996-07-13
Granted: 2000-07-21
Abstract: A general dimensioning method and system for allocating limited transmission resources to various virtual paths defined on top of a physical network.  A two-level hierarchical structure is defined with a layer of one or more virtual paths on top of a layer of physical network elements. Traffic demand is specified for each virtual path and the Entropy Rate Function is used as a blocking measure. The loads on the various links are balanced by equalizing blocking probabilities and the optimal allocation of network physical resources is determined.
Patent TW-307901-B (TW)
Title: The fabricating method for polysilicon transistor with buried gate
Inventor: YEH CHING-FA
IPC: H01L21/322
Filed: 1996-07-23
Granted: 1997-06-11
Abstract: A fabricating method for polysilicon transistor with buried gate, it includes following steps: Form SiO2 bottom layer as gate oxide on n-type silicon substrate;Form n-type polysilicon on gate oxide; Form patterned photoresist coating on n-type polysilicon which surface is exposed partially; Proceed p-type dopant implantation by using patterned photoresist coating as mask and let p-type dopant through exposed n-type polysilicon and gate oxide, and form p-well as buried gate on substrate which is under the exposed n-type polysilicon; Deposit a selective insulator on exposed n-type polysilicon surface;Remove patterned photoresist coating, and use insulator as mask to proceed p-type dopant source & drain implantation on n-type polysilicon; Totally deposit an intermitted SiO2 insulator on insulator and n-type polysilicon exposed surface, and produce holes and electrode of source & drain on intermitted SiO2 insulator.
Patent TW-312788-B (TW)
IPC: G11C11/24
Filed: 1996-07-24
Granted: 1997-08-11
Abstract: The memory with a number of memory cells, such as a read-only (ROM) or dynamic random access (DRAM) memory and the like, is a miniaturised mechanical component. An initial insulation layer (2) is applied over the whole of the main surface of a carrier (1), to be covered over the whole surface by an electrically conductive membrane layer (3). The membrane layer (3) is structured to give the initial conductor paths (4) at the expanded sections (5) of the memory cells. The first insulation layer (2) is given an isotropic etching using the structured membrane layer (3) as the etching mask, until a sharp point (10) remains in the centre directly below the expansion (5). All the remaining material of the insulation layer (2) is removed at the under side of the expansion (5) to form the membrane (5). The membrane can be an oxidation of silicon for the required compressive stress.
Patent TW-347379-B (TW)
Title: Fine particles of petaloid porous hydroxyapatite and method for manufacturing the same
Inventor: NISHIOKA HIDEOKA
IPC: A61K6/838
Filed: 1996-07-24
Granted: 1998-12-11
Abstract: Fine particles of petaloid porous hydroxyapatite which satisfy the following formulas (a)-(g) and which have an atomic ratio of Ca/P ranging from 1.62 to 1.72 and a chemical formula Ca5(PO4)3(OH): (a)~(g) in which: dx1: average particle diameter (μm) of the fine particles of petaloid porous hydroxyapatite measured by a photograph of an electron microscope; α: dispersion coefficient; d50: 50% average particle diameter (μm) measured by a particle size distribution tester using a microtrack FRA laser; β: sharpness; a particle size distribution value; the smaller the value becomes, the sharper the distribution becomes; d90: 90% particle diameter (μm) of the total fine particles of petaloid porous hydroxyapatite passed through a sieve measured by a particle size distribution tester using a microtrack FRA laser; d10: 10% particle diameter (μm) of the total fine particles of petaloid porous hydroxyapatite passed through a sieve measured by a particle size distribution tester using a microtrack FRA laser; dx2: average micropore diameter (μm) of the fine particles of petaloid porous hydroxyapatite measured from a micropore distribution measured by a mercury penetration method; ω1: static percentage of voids (%) calculated from the following equation (h): (h) in which the number of 3.1 is a specific gravity of hydroxyapatite, and in which an apparent specific volume (ml/g) is measured according to a static method of pigment test of JIS K5101-91 20.1; ω2: pressurized percentage of voids (%) calculated from the following equation (I): (I) in which the number of 3.1 is a specific gravity of hydroxyapatite, and in which the thickness is measured by slide calipers after packing 0.5 g of a sample in a cylinder having a section of 2 cm2, pressurizing the sample with a pressure of 30 kg/cm2 for 30 seconds; and Sw1: BET specific surface m2/g by a nitrogen adsorbing method.
Patent TW-335495-B (TW)
Title: A tube for a nuclear fuel assembly and method of manufacturing such a tube
Inventor: MARDON JEAN-PAUL
IPC: G21C3/07
Filed: 1996-08-15
Granted: 1998-07-01
Abstract: A tube for constituting all or the outside portion of cladding for a nuclear fuel rod of a guide tube for a nuclear fuel assembly is composed of a zirconium-base alloy which, by weight, contains 0.8% to 1.8% niobium, 0.2% to 0.6% tin, and 0.02% to 0.4% iron plus some inevitable impurities, containing the zirconium-base alloy carbon in 30ppm to 180ppm, silicon in 10ppm to 120ppm and oxygen in 600ppm to 180ppm.
Patent TW-399047-B (TW)
Title: Process for preparing 1-aryl-4-carbamoyl-tetrazolinones
Inventor: LANTZSCH REINHARD
IPC: C07D257/04
Filed: 1996-09-16
Granted: 2000-07-21
Abstract: Herbicidally active 1-aryl-4-carbamoyl-tetrazolinones of the formula (I) in which Ar represents optionally substituted aryl, R1 represents in each case optionally substituted alkyl, alkenyl, alkinyl or alkoxy, and R2 represents in each case optionally substituted alkyl, alkenyl, alkinyl, cycloalkyl, cycloalkylalkyl, aryl or arylalkyl, or, together with R1, represents alkanediyl, are obtained in good yields and at high purity by reacting 1-aryl-tetrazolinones of the formula (II) with phosgene in the presence of a diluent at temperatures of between 0 DEG C and 150 DEG C (""first process step""),  and reacting the resulting (novel)1-aryl-4-chlorocarbonyl-tetrazolinones of the formula (III) with amines of the formula (IV) in the presence of a diluent, and, where appropriate, in the presence of a further basic compound, at temperatures of between -20 DEG C and +100 DEG C (""second process step""):formula (II) formula (III) formula (I)