baber/WOPTO huggingface dataset:
Patent TW-539690-B (TW)
Title: Process for preparing solid titanium catalyst component, olefin polymerization catalyst, and olefin polymerization process
Inventor: KOJOH SHINICHI
IPC: C08F4/654
Filed: 1998-08-06
Granted: 2003-07-01
Abstract: This invention discloses a process for preparing a solid titanium catalyst component, comprising the steps of (I) contacting a liquid magnesium compound with a liquid titanium compound to precipitate a solid in the contact liquid (beta), and adding an electron donor (d-I) selected from the group consisting of a polycarboxylic ester and a polyether compound to the contact liquid (beta) during the time from beginning to end of the solid precipitation, to form a solid product (alpha); and (II) contacting the solid product (alpha) obtained after completion of the solid precipitation with an electron donor (d-ii) selected from the group consisting of a polycarboxylic ester and a polyether compound, to prepare a solid titanium catalyst component. According to the process, an olefin polymer of high stereoregularity can be prepared by using this catalyst in a polymerization process. This invention further discloses olefin polymerization catalyst containing the solid titanium catalyst composition obtained from the above-mentioned method and an olefin polymerization process using the olefin polymerization catalyst.
Patent TW-380044-B (TW)
Title: Cordless cellular and pleated shade
Inventor: LYSYJ PHILLIP A
IPC: E06B9/323
Filed: 1998-08-20
Granted: 2000-01-21
Abstract: A cordless cellular or pleated window shade having a head rail, a bottom rail and a pleated shade fabric therebetween uses a conventional spring tensioned roller shade bar for raising and lowering the shade without draw cords. A lead screw permanently affixed to an end cap of the head rail threadingly engages one end of the roller shade bar while the opposite end of the roller shade bar has a movable support locking the spring tensioner of the roller shade bar to the support to permit movement of the roller shade bar within the head rail. Lift cords wrap and unwrap themselves about the roller shade bar so that lowering of the shade tensions the spring which spring tension is then used to raise the pleated or cellular shade. The pitch of the lead screw forces the lift cords to wrap themselves about the shade roller bar in a singular, non-overlying manner while the roller shade bar moves within the head rail thereby assuring consistent alignment of the bottom rail with the head rail at any shade position.
Patent TW-384348-B (TW)
Title: Diesel particulate cleansing device for diesel engine system
Inventor: SON SANG-YUN
IPC: F01N3/28
Filed: 1998-08-28
Granted: 2000-03-11
Abstract: A kind of diesel engine system comprises an engine, a fuel oil tank connected with the engine by fuel oil supply piping and an exhaust pipe connected with the engine whereby the exhaust can be expelled from the engine by the exhaust pipes. The invention discloses a diesel particulate cleansing device for diesel engine system comprising a catalyst injector located on a fuel oil supply pipes. The fuel oil supply pipes is located between the engine and fuel oil tank for injecting the catalyst into diesel fuel and pouring the diesel fuel into the engine; and a filter allocated on an exhaust pipe for collecting particulates suspending in the air flowing through the filter. The collected particulate by the filter can be heated by the internal heat of exhausted gas so that the particulate is combusted at a relatively low temperature and the filter can be recycled.
Patent TW-393346-B (TW)
Title: Method for applying a coating to the tip of a flow directing assembly
Inventor: ZAJCHOWSKI PAUL H
IPC: F01D5/28
Filed: 1998-10-20
Granted: 2000-06-11
Abstract: A method for applying a coating to the tips 46 of an array of flow directing assemblies 42 such as an array of rotor blades or stator vanes is disclosed. Various steps in the method are developed which decrease cost and increase the efficiency of the method. In one particular embodiment, the step of surface preparation and coating applications are performed with the same fixture without removing or reinstalling the assemblies.
Patent TW-424171-B (TW)
Title: Device of compensation-type tape and method for making the same
Inventor: YANG JIN-CHENG
IPC: G02F1/13
Filed: 1998-11-03
Granted: 2001-03-01
Abstract: The present invention relates to a device of compensation-type tape used on a liquid crystal substrate, and a method for making the same. The compensation-type tape uses a novel circuit packaging method (COFG) of liquid crystal display, in addition to the compensation-type tape according to the present invention. The method of making the compensation-type tape comprises using a tape of polyimide resin, followed by patterning and punching; adhering a copper foil on the tape; filling the portion of the punched hole on the tape with a compensation-type metal to a predetermined height by electroplating; etching the desired conductive wires by a conventional photolithography masking and etching process, thereby forming the compensation-type tape according to the present invention.
Patent TW-404026-B (TW)
Title: Semiconductor-memory device and its production method
Inventor: RUSCH ANDREAS
IPC: H01L27/10
Filed: 1999-04-08
Granted: 2000-09-01
Abstract: This invention relates to a semiconductor-memory device with a matrix of semiconductor-memory elements which are arranged in a substrate (10), said semiconductor-memory elements have respectively: a substrate-region (10) with a first conductive type; an isolation-layer region (20) which is provided on said substrate-region (10); a contact-hole-region (25) which is provided in said isolation-layer region (20); a bit-decision-region (30) which is provided in said substrate-region (10) under said contact-hole-region (25); a contact-plug-region (40) which is provided in said contact-hole-region (25) and keeps in electrical contact with said bit-decision-region (30). Said bit-decision-region (30) is so constructed that it can decide the contact-resistance between said substrate-region (10) and said contact-plug-region (40) according to the bit which is to be stored in the respective semiconductor-memory element.
Patent TW-527771-B (TW)
Title: Piezoelectric resonator
Inventor: YOSHIDA RYUHEI
IPC: H03H9/10
Filed: 1999-04-19
Granted: 2003-04-11
Abstract: A piezoelectric resonator includes two sealing substrates, a seal portion, and an energy-trap type piezoelectric resonance element which is adapted to vibrate in a third harmonic of thickness extensional vibration. The piezoelectric resonance element includes a piezoelectric substrate and a pair of excitation electrodes, which are disposed on opposite major surfaces of the piezoelectric substrate. A portion of the piezoelectric substrate sandwiched by the excitation electrodes defines a vibrating portion. The sealing substrates each have a cavity formed therein and are attached onto the corresponding major surfaces of the piezoelectric substrate such that the cavities define a space for vibration. The seal portion is formed around the vibration space so as to damp leaking vibration. The vibrating portion is arranged such that the approximate center thereof is spaced from the approximate center of the vibration space as viewed along the major surfaces of the piezoelectric resonance element.
Patent TW-I232857-B (TW)
Title: Method for producing epsilon-caprolactam
Inventor: FUKAO MASAMI
IPC: C07D201/04
Filed: 1999-04-23
Granted: 2005-05-21
Abstract: The present invention provides a method for producing epsilon-caprolactam which comprises the step of treating, with water, a reaction product containing 1-aza-2-alkoxy-1-cycloheptene, which is obtained by gas phase Beckmann rearrangement reaction of cyclohexanone oxime using a solid catalyst in the presence of alcohol, to eliminate the 1-aza-2-alkoxy-1-cycloheptene. The resulting epsilon-caprolactam usually has a 1-aza-2-alkoxy-1-cycloheptene content of 100 ppm or less, preferably 25 ppm or less, more preferably 10 ppm or less and, therefore, has low free basicity and good qualities.
Patent TW-432369-B (TW)
Title: Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
Inventor: NEE HAN H
IPC: G11B7/258
Filed: 1999-04-28
Granted: 2001-05-01
Abstract: A copper-based or silver-based alloy thin film is provided for the highly reflective or semi-reflective layer of optical discs. Alloy additions to silver include gold, pallacium, copper, rhodium, ruthenium, osmium, iridium, and platinum. Alloy additions to copper include silver, cadmium, gold, magnesium, aluminum, and nickel. These alloys have moderate to high reflectivity and reasonable corrosion resistance in the ambient environment.
Patent TW-497210-B (TW)
Title: Self-aligned contact via process
Inventor: LIU JACSON
IPC: H01L21/60
Filed: 1999-05-11
Granted: 2002-08-01
Abstract: A kind of self-aligned contact via process through the combination of etching back sidewall and etching contact via is disclosed in the present invention. By using the simplified process of the invention, it is possible to increase the production capability. In addition, thicker etching barrier layer can be obtained to prevent the gate from being etched and penetrated when etching contact via. The invented process mainly includes the following steps. (a) A semiconductor substrate is provided, in which plural transistor devices are formed on the semiconductor substrate and each transistor includes a gate and a pair of source/drain diffusion regions, In addition, an insulating cap layer is formed on the gate. (b) A barrier layer is formed to cover the substrate and the transistor devices. (c) A plane insulating-layer is formed to cover the barrier layer. (d) By using the barrier layer as an etch stop layer, the insulating layer is selectively etched so as to form a self-aligned via corresponding to source/drain diffusion region. (e) The barrier layer below the via is anisotropically etched so as to expose the source/drain diffusion region for contact region, and a sidewall layer is formed on the sidewall of gate at the same time.
Patent TW-411578-B (TW)
Title: Method for manufacturing copper nucleation layer in IC
Inventor: LIOU JUNG-SHI
IPC: H01L21/768
Filed: 1999-08-13
Granted: 2000-11-11
Abstract: The present invention discloses a method for manufacturing a copper nucleation layer in an integrated circuit, which comprises applying an a.c. power on the susceptor of a substrate while carrying out the deposition of a copper nucleation layer with an excellent sidewall coverage ratio by using a repetitive switching, AC on and AC off, of the a.c. power to the susceptor. The method improves a well know problem of low sidewall coverage ratio present in the prior art where the susceptor is not applied with an a.c. power. The method also provides a better sidewall coverage ratio than a process where the susceptor is always provided with an a.c. power. Therefore, the copper nucleation layer produced according to the present invention can provide a good quality and reliability for the subsequent production of copper plug.
Patent TW-475072-B (TW)
Title: Long-length continuous phase Bragg reflectors in optical media
Inventor: BRENNAN JAMES FRANCIS III
IPC: G02B6/26
Filed: 1999-09-27
Granted: 2002-02-01
Abstract: A long length continuous phase Bragg reflector and the method and an apparatus for writing the gratings into an optical fiber. The method includes the steps of providing a photosensitive optical fiber and a writing beam. A periodic intensity distribution of period Λ is created from the writing beam and the optical fiber is translated relative to the intensity distribution at a velocity v(t). The intensity of the writing beam is modulated as a function of time at a frequency f(t), where v(t)/f(t) ≈ Λ. The intensity of the writing beam is varied further to control the envelope of the refractive index profile to write apodized gratings. The gratings measure at least 2.5 meters in length.
Patent TW-431109-B (TW)
Title: Mobile telephone with a loudspeaker
Inventor: KLEIN ERICH
IPC: H04M1/02
Filed: 1999-10-29
Granted: 2001-04-21
Abstract: In a mobile telephone (1) with a housing (2) that has a housing wall (3) with at least one sound opening (8, 9) and with a loudspeaker (22) arranged in the housing (2) adjacent to the housing wall (3), which loudspeaker has a loudspeaker axis (23) and whose dimension (D) transverse to the loudspeaker axis (23) is larger than its dimension (M) along the loudspeaker axis (23), where the loudspeaker (22) comprises sound generation means (27, 28) by which sound can be delivered to the at least one sound opening (8) via a forespace (29), the loudspeaker (22) is arranged inside the housing (2) in such a way that the loudspeaker axis (23) in essence runs parallel with the housing wall (3) and sound-conducting means (5, 30, 33, 34) are provided by which sound generated by the sound generation means (27, 28) can be conducted from the forespace (29) to the at least one sound opening (8).
Patent TW-480863-B (TW)
Title: Public network encrypting method
Inventor: LUO REN-CHIUAN
IPC: H04L9/28
Filed: 1999-11-03
Granted: 2002-03-21
Abstract: The present invention provides a public network encrypting method. The method has a step of applying plain text to Harr wavelets transform matrix for being encapsulated and then generating chaotic signal packing by softwares. Based on that the chaotic system is highly sensitive and unpredictable to the initial condition and chaotic parameters, the data to be transmitted is made to have a high degree of ambiguity, thereby achieving a high security in transmitting data over a network. Furthermore, with the present method, it is able to detect the transmission error between the transmitter and receiver, thereby providing an excellent error detecting capability.
Patent TW-449717-B (TW)
Title: Information recording medium, information recording apparatus and information reproducing apparatus
Inventor: SAWABE TAKAO
IPC: G11B27/00
Filed: 1999-11-23
Granted: 2001-08-11
Abstract: On an information recording medium (200), record information comprising information units (230), each including partial audio information obtained by dividing compressed audio information obtained by applying a variable length compression onto raw audio information, is recorded. The information unit includes header information (240, 241, 242) and lead data which is the compressed audio information positioned at a lead of one or a plurality of the partial audio information. The header information includes: reproduction time control information (241e) indicative of a time of reproducing the partial audio information, to which first lead data among the lead data included in the information unit together with the header information belongs; forward position information (242e) indicative of a position, at which the compressed audio information to be reproduced a first predetermined time duration before a reproduction time indicated by the reproduction time control information on a reproduction time axis of the compressed audio information is recorded; and backward position information (242f) indicative of a position, at which the compressed audio information to be reproduced a second predetermined time duration after the reproduction time on the reproduction time axis is recorded.
Patent TW-449861-B (TW)
Title: Schottky diode with dielectric trench
Inventor: TAN ALLEN Y
IPC: H01L21/76
Filed: 1999-11-26
Granted: 2001-08-11
Abstract: An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure formed in the epitaxial layer adjacent the field oxide layers provided at the edge of the active area of the rectifier, for acting to enhance the field plate for termination of the electric field generated by the device during operation. The trench is formed in a closed configuration about the drift region and by more effectively terminating the electric field at the edge of the drift region the field is better concentrated within the drift region and acts to better interrupt reverse current flow and particularly restricts leakage current at the edges.
Patent TW-436905-B (TW)
Title: Method for forming self-aligned titanium silicide layer with low resistance
Inventor: LUO JENG-HUNG
IPC: H01L21/28
Filed: 1999-12-16
Granted: 2001-05-28
Abstract: The present invention relates to a method for forming a self-aligned titanium silicide layer with low resistance in a semiconductor production process, which comprises, while sputtering a titanium metal, introducing a mixture gas of N2/Ar, using a small amount of N2 in the Ti thin layer to form a small amount of a third phase of TiN. These small amount of the third phase TiN can be used as nuclei while using the TiSi of the C49 phase to form a TiSi of the C54 phase, thereby increasing the formation of the low resistance TiSi of the C54 phase. Furthermore, the existence of a small amount of N in the interface between the Ti and Si substrate can reduce the surface energy of the substrate and increase the thermal stability thereof. Such that a wider process window exists when the upper limit of the process temperature exceeds 1050 DEG C.
Patent TW-491914-B (TW)
Title: Method for heat treatment of silicon wafers and silicon wafer
Inventor: KOBAYASHI NORIHIRO
IPC: H01L21/322
Filed: 1999-12-22
Granted: 2002-06-21
Abstract: According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000 DEG C to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700 DEG C is controlled to be 20 DEG C/sec or less, and a silicon wafer which has a crystal defect density of 1.0x10<SP>4</SP> defects/cm<SP>3</SP> or more in a wafer bulk portion, a crystal defect density of 1.0x10<SP>4</SP> defects/cm<SP>3</SP> or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm<SP>2</SP> or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
Patent TW-507196-B (TW)
Title: Device and method of signal compensation for high speed disk drive
Inventor: JU MENG-HUANG
IPC: G11B7/09
Filed: 2000-02-25
Granted: 2002-10-21
Abstract: It is a kind of device and method of signal compensation for high speed disk drive to compensate the error signal of disk drive system. The error signal is separately inputted into a compensator and band pass filter (BPF), and then it outputs the sum of output signals of the compensator and BPF. The BPF is for amplifying the signal in the high speed rotation part of the error signal. The lead and lag compensators in the compensator can be in parallel or series mode.
Patent TW-499566-B (TW)
Title: Fluorescent x-ray analysis apparatus
Inventor: TAMURA KOICHI
IPC: G21K1/02
Filed: 2000-03-08
Granted: 2002-08-21
Abstract: In a fluorescent X-ray analysis apparatus, a diffraction X-ray is removable from a sample even if it is formed of a mixture of fine crystals. A movable collimator mechanism capable of detecting only a collimate component of an X-ray optical flux is provided on an X-ray path extending between a sample and an X-ray detector. Spectrum measurement is conducted on a same sample in both cases of inserting and not inserting the collimator mechanism.
Patent TW-446989-B (TW)
Title: High-pressure discharge lamp
Inventor: GROETZBACH MICHAEL
IPC: H01J61/36
Filed: 2000-03-15
Granted: 2001-07-21
Abstract: The high-pressure discharge lamp is fitted with electric leads (3, 4, 9, 15) and with an outer bulb (5) in which a discharge vessel (1) is held by means of frame parts. Supply leads (9, 15) are led out at the ends of the discharge vessel (1). The connection between a first and a second electrically conducting lead is produced by a soldered connection (11, 16) which uses nickel and/or zirconium as solder.
Patent TW-487804-B (TW)
Title: Method and appartus for testing signal lines of a host bus
Inventor: WEI TIAN-CHENG
IPC: G01R31/00
Filed: 2000-03-28
Granted: 2002-05-21
Abstract: A method and an apparatus for testing a signal line of a host bus are disclosed in the invention. The host bus is connected to a CPU socket of a computer system. A test utility is executed in the computer system during test for issuing a transaction to a CPU. The transaction has a target value transmitted over the signal line being tested. According to the invention, first, a halt signal to is asserted to the CPU for halting the transaction. A test value on the signal line is the latched. Afterward, the test value is then checked whether it differs from the target value, if yes, the signal line being tested is considered as malfunctioning.
Patent TW-451479-B (TW)
Title: Semiconductor memory device
Inventor: MORIKAWA YOSHINAO
IPC: H01L27/112
Filed: 2000-03-28
Granted: 2001-08-21
Abstract: A semiconductor memory device includes a semiconductor substrate; a plurality of word lines provided on the semiconductor substrate and arranged in parallel to each other; a plurality of memory cells provided along each of the plurality of word lines; a plurality of sub bit lines provided on the semiconductor substrate and arranged in parallel to each other, each of the plurality of word line intersecting the plurality of sub bit lines; a plurality of main bit lines arranged in parallel to the plurality of sub bit lines; a plurality of bank select lines arranged in parallel to the plurality of word lines; a plurality of bank select transistors provided along each of the plurality of bank select lines and connected to the respective sub bit lines; and a plurality of auxiliary conduction regions provided for each of the plurality of the main bit lines, connecting each of the plurality of the main bit lines to a set of the plurality of bank select transistors of the plurality of sub bit lines. The shape of the plurality of bank select transistors is the same. Each of the plurality of auxiliary conduction regions has a modified-H shape including a central portion connected to each of the plurality of main bit lines and branch portions each connected to a corresponding one of the set of the plurality of bank select transistors of the plurality of sub bit lines.
Patent TW-478959-B (TW)
Title: Waste gas treatment system
Inventor: KIM KYOUNG-KYOON
IPC: F23J3/04
Filed: 2000-04-25
Granted: 2002-03-11
Abstract: There are provided a waste gas treatment system comprising a former treatment equipment which is comprised of a manifold for mixing an inert gas with a waste gas to stabilized the waste gas, a heating chamber for heating the waste gas mixed with the inert gas to oxidize the waste gas and a cooling chamber for cooling the heated waste has and a first collecting case for collecting powder attached to an inside wall of the cooling chamber; a cyclone collector which separates powder still contained the waste gas by a centrifugal method and collects the separated powder in a second collecting case and then discharges the purified waste gas; and a filter collector which filters powder still contained the waste gas introduced from the cyclone collector with a filter assembly of a filter chamber, and applies air impact to the powder attached to the filter assembly to separate the powder from the filter assembly, and collects the separated powder in a third collecting case.