baber/WOPTO huggingface dataset:
Patent TW-472388-B (TW)
Title: Apparatus and method for independent threshold voltage control of memory cell and select gate in a split-gate EEPROM
Inventor: GERBER DON
IPC: H01L27/115
Filed: 2000-11-17
Granted: 2002-01-11
Abstract: A split-gate p-channel memory cell of an EEPROM, and method of fabricating the cell, are provided. The memory cell includes a memory transistor and select transistor that share a common gate. It further includes two independent and distinct threshold voltage adjusts implanted in different portions of a channel region of a substrate of the memory cell. One of the threshold voltage adjusts is disposed in relation to the memory transistor so as to influence its threshold voltage. The other threshold voltage adjust is disposed in relation to the select transistor so as to influence its threshold voltage. In the method of fabrication, an n-type of dopant is implanted into the substrate to form the threshold voltage adjust associated with the memory transistor and a p-type of dopant is implanted into the substrate to form the threshold voltage adjust associated with the select transistor.
Patent TW-540209-B (TW)
Title: Method and system of E-mail analysis and auto-reply
Inventor: HUANG YU-LI
IPC: G06F17/00
Filed: 2000-11-22
Granted: 2003-07-01
Abstract: The invented system of E-mail auto-reply includes a mail server, a database and a system server. The mail server is provided to receive and reply the E-mail from the external customer. The database has a multi-layered tree structure including a plurality of paths and a plurality of nodes. The end terminal of the plurality of paths includes a characteristic content and a data content corresponding to the characteristic content. The system server is used to read the E-mail content. The characteristic word of the nodes on the plurality of paths in the multi-layered tree structure of the database is used to compare with the classification of one-sentence in the E-mail content until all sub-sentences in the E-mail fall at the end terminal of a path in the database. The data content stored in the end terminal is replied to the E-mail.
Patent TW-504372-B (TW)
Title: Cigarette paper with reduced ash-scattering property
Inventor: TANAKA YASUO
IPC: A24D1/02
Filed: 2000-12-27
Granted: 2002-10-01
Abstract: A wrapping paper for a cigarette is prepared from a pulp containing a fibrous component in an amount of 60 weight % or more, in particular. The wrapping paper for a cigarette can be used for reducing markedly the scattering property of a cigarette ash without increasing the amount of a filler accelerating burning or a burning aid.
Patent TW-504685-B (TW)
Title: Erasable phase change optical recording elements
Inventor: TYAN YUAN-SHENG
IPC: G11B7/24
Filed: 2001-01-12
Granted: 2002-10-01
Abstract: A rewriteable phase-change optical recording element includes a substrate; and a recording layer over the substrate having at least two sub-layers of different chemical compositions, the compositions and thickness of the sub-layers being selected so that when subject to laser light during a writing process the compositions mixed together to form a high reflectivity mixed crystalline region without using any prior initialization or mixing processes.
Patent TW-526196-B (TW)
Title: Process for preparing melamine from urea
Inventor: DE WIT NORA ANNA
IPC: C07D251/60
Filed: 2001-01-29
Granted: 2003-04-01
Abstract: Process for preparing melamine from urea at elevated temperature and in the presence of a catalyst, in which a gaseous product stream is obtained which is contacted with a liquid coolant in a cooling zone and in which a proportion of the concentrated aqueous carbamate solution from the absorption zone is returned to the cooling zone.
Patent TW-I234216-B (TW)
Title: Ceramic heater
Inventor: HIRAMATSU YASUJI
IPC: H01L21/00
Filed: 2001-03-13
Granted: 2005-06-11
Abstract: The purpose of the present invention is provide a ceramic substrate that is optimum as the substrate for the manufacturing of semiconductor and inspection apparatus and is excellent in a heating up characteristic and voltage resistance and Young's modulus at a high temperature. In the ceramic substrate of the invention, the conductor is formed inside the surface layer. The invented ceramic substrate is featured with having a leakage amount of 1x10<-12> to 10<-7> Pa.m<3>/sec(He) measured by the helium leakage instrument.
Patent TW-527799-B (TW)
Title: Data packet discarding
Inventor: BENNET JON C R
IPC: H04L12/56
Filed: 2001-05-01
Granted: 2003-04-11
Abstract: A system for hierarchically storing packetized data and transferring the packetized data includes an input configured to receive packets of data, a memory coupled to the input and configured to store packets of data, an output coupled to the memory and configured to transfer packets of data from the memory, and a controller coupled to the memory and configured to control the memory to store packets of data in queues associated with a hierarchy in which a first level of the hierarchy includes a group of queue group components, wherein at least one of the queue group components in the group at the first level includes a group of queue group components associated with a second level of the hierarchy that is different from the first level of the hierarchy.
Patent TW-516184-B (TW)
Title: CMOS active pixel for improving sensitivity
Inventor: LEE SEO-KYU
IPC: H01L27/146
Filed: 2001-05-25
Granted: 2003-01-01
Abstract: A CMOS active pixel of increased sensitivity includes a floating diffusion layer, a photo-diode, a reset circuit and an output circuit. The floating diffusion layer is of a first dopant type and receives a signal charge. The photo-diode generates the signal charge depending on an energy inputted thereto and transfers the signal charge to the floating diffusion layer. The photo-diode has first and second lower diode dopant layers of the first dopant type and an upper diode dopant layer of a second dopant type. The polarity of the second dopant type is opposite to that of the first dopant type. The first and second lower diode dopant layers are formed to contact a lower portion of the upper diode dopant layer. The upper diode dopant layer and the first lower diode dopant layer are formed to contact the floating diffusion layer. The second lower diode dopant layer is formed to contact the first lower diode dopant layer. The reset circuit controls a voltage level of the floating diffusion layer to a reset voltage level in response to a control signal. A doping concentration of the first lower diode dopant layer is less than that of the floating diffusion layer. A doping concentration of the second lower diode dopant layer is less than that of the first lower diode dopant layer.
Patent TW-I289148-B (TW)
Title: Perfluoropolyethers and processes therefor and therewith
Inventor: HOWELL JON L
IPC: C10N50/10
Filed: 2001-07-19
Granted: 2007-11-01
Abstract: A perfluoropolyether, a composition comprising the perfluoropolyether, a process for producing the perfluoropolyether, and a process for improving the thermostability of grease or lubricant are provided. The perfluoropolyether comprises (1) perfluoroalkyl radical end groups in which the radical has at least 3 carbon atoms per radical and is substantially free of perfluoromethyl and perfluoroethyl end groups or (2) at least one bromine or iodine atom at the primary position of the perfluoropolyether.
Patent TW-593259-B (TW)
Title: Production of aromatic carboxylic acids
Inventor: GRAHAM DEREK ALEXANDER
IPC: C07C/
Filed: 2001-07-19
Granted: 2004-06-21
Abstract: A process for the production of an aromatic carboxylic acid comprising contacting in the presence of a catalyst, within a continuous flow reactor, one or more precursors of the aromatic carboxylic acid with an oxidant, such contact being effected with said precursor(s) and the oxidant in an aqueous solvent comprising water under supercritical conditions or near supercritical conditions close to the supercritical point such that said one or more precursors, oxidant and aqueous solvent constitute a substantially single homogeneous phase in the reaction zone, wherein the contact of at least part of said precursor with said oxidant is contemporaneous with contact of said catalyst with at least part of said oxidant.
Patent TW-512429-B (TW)
Title: Dry development method using top surface imaging technology
Inventor: WU TSANG-JIU
IPC: H01L21/027
Filed: 2001-08-15
Granted: 2002-12-01
Abstract: This invention discloses a method to transfer a pattern to a resist layer. Firstly, a resist layer is coated onto a semiconductor substrate and an exposure process is performed in the resist layer. Then, a dry development process is carried out to remove part of the resist layer to define a pattern to the resist layer and to expose part of the top surface of the semiconductor substrate, in which the reaction gases used for proceeding the dry etch process do not include oxygen.
Patent TW-503479-B (TW)
Title: Exposure time determination method of wafer photolithography process
Inventor: YU JIUN-YAN
IPC: G06F17/50
Filed: 2001-08-16
Granted: 2002-09-21
Abstract: There is provided an exposure time determination method of wafer photolithography process, which is applied in a wafer photolithography system for determining a preferred exposure time used in the L(N)-lot wafer product. The method comprises tracing at least three lots of testing wafers by timing relation, and obtaining the corresponding detection values; using a predefined mathematics mode to obtain the average of the at least three detection values; next, matching the obtained averages and predefined qualified detection values, so as to adjust and generate a proper processing exposure time by determining the difference between the average values and qualified detection values; and finally, using the preferred processing exposure time as the exposure time for the L(N)-lot wafer product. With the exposure time determination method in accordance with the present invention, it is able to integrate the history record of the testing wafers and clearly display the varying trend of overall system parameters for the wafer photolithography process, thereby conservatively adjusting the exposure time applied in the process and reducing the influence of a minute system variance.
Patent TW-I228513-B (TW)
Title: Organic anti-reflective coating polymer, anti-reflective coating composition and methods of preparation thereof
Inventor: HONG SUNG-EUN
IPC: C08F220/18
Filed: 2001-08-17
Granted: 2005-03-01
Abstract: An organic anti-reflective polymer having the following formula 1, its preparation method, an anti-reflective coating composition comprising the organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices, improving the production yields and controlling the k values. It is also possible to prevent undercutting due to an unbalanced acidity after finishing the coating.
Patent TW-523769-B (TW)
Title: A main element of a surge protector device
Inventor: KATODA TAKASHI
IPC: H01T4/10
Filed: 2001-08-17
Granted: 2003-03-11
Abstract: The present invention is directed to a main element of a surge protector device and its fabrication method which uses breakdown phenomenon of a single high resistive film. A breakdown voltage and a place where breakdown occurs can be precisely controlled. The surge protector device changes from its non-conductive state to conductive state very quickly when a surge is induced and returns quickly to the non-conductive state when a surge is removed if said element is surrounded by oxidizing agent. The main element of the surge protector device of the present invention has a single high resistive film on a single metal bar. The high resistive film has a part or parts where electric field concentrates when a surge induced. A breakdown voltage can be controlled precisely by controlling a size including a thickness of the high resistive film of the part. The part is called a fuse part The main element includes also at least two parts on said metal bar which are continuous to said fuse part. Electrodes are formed on said at least two parts. Therefore said at least two parts are called pad parts.
Patent TW-504564-B (TW)
Title: Image processing method and device
Inventor: YAMAZAKI NOBUTO
IPC: G06T1/00
Filed: 2001-11-22
Granted: 2002-10-01
Abstract: The present invention is to provide an image processing method and device which increases the speed and precision of position detection in the run time without depending on an absolute lattice or correction samples. Each lead is placed at the center of visual field of the camera and pictured respectively (S104) to obtain the positional coordinates (Lax, Lay). All leads L in the visual field are pictured at the same time to obtain the positional coordinates (Lbx, Lby)(S106). The difference between the former coordinates and the latter coordinates is calculated as the correction amount (Ldx, Ldy)=(LaX-Lbx, Lay-Lby) (S108). While the product is under production, the positional coordinates of each lead, obtained by simultaneously picturing the semiconductor component to be detected, is added with the correction amount (Ldx, Ldy). Since the picture is taken simultaneously, the picturing time is short, so that the distortion of the optical system due to correction amount (Ldx, Ldy) or the error due to directionality of illumination can be avoided.
Patent TW-I224915-B (TW)
Title: System and method for managing flow bandwidth utilization in a packet communication environment
Inventor: HUANG NENG-FU
IPC: H04L12/00
Filed: 2001-11-28
Granted: 2004-12-01
Abstract: To manage the bandwidth of a network, a novel rate control scheme, time-division-queue rate control scheme (TDQ-RCS), is provided. The TDQ-RCS according to the present invention can rapidly determine departure time of an arrival packet, add the arrival packet into the time division queue to which it belongs according to the departure time, and then output the packet on schedule. All algorithms employed by the TDQ-RCS can be completed in a constant time since these algorithms are simple for the arrival packets of different sizes. Especially, the TDQ-RCS neither generates any dummy packet nor wastes any bandwidth but still can accomplish the bandwidth management. Therefore, the present invention significantly accomplishes the bandwidth management of a network without generating any dummy packet and wasting the bandwidth.
Patent TW-533727-B (TW)
Title: System and method for automatically activating or deactivating image fetching by caller identification
Inventor: WENG SHR-SHIUNG
IPC: H04M1/02
Filed: 2001-12-04
Granted: 2003-05-21
Abstract: A system and method for automatically activating or deactivating image fetching with caller identification (CLI) is provided go through the existing communication network to control and assist for fetching, converting, storing and transmitting image data over remote side serving for further processing analysis. The system in the invention comprises an image fetch processing module, a data transmission management module and a power control management module. In addition, the method of the invention includes the following procedures: executing an automatic activation processing on schedule and starting to receive a call, conducting a recognition procedure of incoming call and executing a power activation processing after confirming the incoming call, starting an image fetching and file transfer processing and executing a power off processing after executing the image data transmission.
Patent TW-555692-B (TW)
Title: Doped precipitated silica and a process for preparing it
Inventor: LINDNER GOTTLIEB-GEORG DR
IPC: C01B33/193
Filed: 2001-12-10
Granted: 2003-10-01
Abstract: The invention relates to foreign-atom-doped precipitated silicas having a BET surface area of more than 300 m<2>/g and a maximum surface concentration of the foreign atoms of 0.05 mmol/m<2>, to a process for preparing them and to the use of the resulting precipitated silicas in papermaking.
Patent TW-578410-B (TW)
Title: Uninterrupted file accessing system and method
Inventor: CHEN GUANG-MING
IPC: H04N7/173
Filed: 2001-12-31
Granted: 2004-03-01
Abstract: An uninterrupted file accessing system and method can go through a communication network to provide uninterrupted information accessing service for communication proceeded among multiple users. The system comprises a main program subsystem, a data storage subsystem and an I/O access proxy subsystem, in which the main program subsystem executes a main program to receive I/O access request issued by user for providing data access service to users. The data storage subsystem provides to store the data required to execute data services; the I/O proxy subsystem can use the request received from main program subsystem to record and transfer to the service data storage subsystem in response to the data read/write access requested by user. When the I/O access proxy subsystem finishes the access result of transferred request, forward the result to the main program subsystem to deliver to those users. During any I/O access period, system still can provide uninterrupted services to users.
Patent TW-I298732-B (TW)
Title: Conductive organic thin film and production method therefor, electrode and electric cable using it
IPC: H01L51/00
Filed: 2002-02-08
Granted: 2008-07-11
Abstract: A conductive organic thin film is made of organic molecules including a terminal bond group that is covalently bonded to a surface of a substrate material (1) or a surface of a primer layer (2) formed on the substrate material, a conjugated bond group, and an alkyl group between the terminal bond group and the conjugated bond group, wherein the organic molecules are oriented, and the conjugated bond group is polymerized with the conjugated bond groups of other molecules, thus forming a conductive network (34). The conductive network (34) is formed of polypyrrole, polythienylene, polyacetylene, polydiacetylene and polyacene. For the polymerization of the conjugated bond groups, polymerization through electrolytic oxidation, catalytic polymerization or polymerization through energy beam irradiation is used. Thus, a conductive organic thin film with a conductivity that is higher than that of conventional organic thin films is provided, as well as a method of manufacturing the same and an electrode, a conductor and an electronic device using the same. <IMAGE>
Patent TW-521404-B (TW)
Title: Method for transferring flash memory to flash read only memory
Inventor: YU HUNG-CHANG
IPC: H01L21/8246
Filed: 2002-03-07
Granted: 2003-02-21
Abstract: A method for transferring flash memory to flash read only memory is introduced. It disables the high-voltage MOS devices of the peripheral circuit area and the normal voltage MOS devices of the charge pumping devices, and comprises the following steps: first obtaining the overlap region of code implantation layer and the poly-silicon layer through mask logic operation while forming the high-voltage and normal voltage MOS devices and then defining the field oxide region in the area between the source and drain of the high-voltage and normal voltage MOS devices; and finally forming field oxide to disable the high-voltage and normal voltage MOS devices by the isolation of the field oxide.
Patent TW-513557-B (TW)
Title: Automobile navigation system
Inventor: MORITA HIROYUKI
IPC: G01C21/36
Filed: 2002-03-12
Granted: 2002-12-11
Abstract: The subject of the present invention is: to provide an automobile navigation system which can provide the least sufficient information required for the driver during driving, which can have good steering function and can provide sufficient information when necessary. The solution of the present invention is: the navigation system receiving the GPS satellite electromagnetic wave to display the guiding information comprises: a navigation unit (1) to generate the navigation information; an instrument panel (3) of the instrument unit (107) to display one part of the guiding information, and a display panel (16) to display overall guiding information of the navigation unit (1) selectively. The display panel (16) of the navigation unit (1) is allocated outside the viewing range of the driver when the automobile is running. The instrument panel (3) of the instrument unit (107) is allocated inside the viewing range of the driver when the automobile is running.
Patent TW-564540-B (TW)
Title: Low power operation mechanism and method
Inventor: ZHANG KEVIN X
IPC: H03K19/00
Filed: 2002-03-19
Granted: 2003-12-01
Abstract: An apparatus and method are provided for powering a chip having at least one transistor. A voltage regulating device may apply a first voltage and a second voltage to the transistor. The voltage regulating device may include a mechanism to apply a third voltage to a body contact of the transistor while applying the first voltage to the transistor. This places the transistor in a reverse body bias mode which conserves energy by reducing leakage current.
Patent TW-I271845-B (TW)
Title: Electrostatic discharge protection device
Inventor: LIN SHI-TRON
IPC: H02H9/00
Filed: 2002-03-28
Granted: 2007-01-21
Abstract: The present invention provides an electrostatic discharge protection device. The electrostatic discharge protection device which is formed on a substrate comprises a first isolation region formed on the substrate, an active region enclosed by the first isolation region, a second isolation region formed on the substrate and surrounded by the active region, a first gate electrode formed in the active region, the first gate electrode having a first end extending over the first isolation region and a second end extending over the second isolation region, a second gate electrode formed in the active region, the second gate element being substantially in line with the first gate electrode and having a first end extending over the first isolation region and a second end extending over the second isolation region, a drain region formed in the active region at a first side of the first gate electrode, a source region formed in the active region at a second side of the first gate element, a drain contact for electrically coupling the drain region to a first node, and a source contact for electrically coupling the source region to a second node.