Patent SG-11201900437Y-A (SG)
Title: Memory device, method of forming the same, method for controlling the same and memory array
Inventor: DANANJAYA PUTU ANDHITA
IPC: H01L45/00
Filed: 2017-09-12
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 11111111111111111111111111111111111111111111111111111111111111111111111111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/063093 Al 05 April 2018 (05.04.2018) WIP0 I PCT (51) International Patent Classification: (84) Designated States (unless otherwise indicated, for every H01L 45/00 (2006.01) HO1L 27/24 (2006.01) kind of regional protection available): ARIPO (BW, GH, Gll C 13/00 (2006.01) GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (21) International Application Number: UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, PCT/SG2017/050457 TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, (22) International Filing Date: MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, 12 September 2017 (12.09.2017) TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). (25) Filing Language: English (26) Publication Language: English Published: (30) Priority Data: — with international search report (Art. 21(3)) 10201608151Q 29 September 2016 (29.09.2016) SG (71) Applicant: NANYANG TECHNOLOGICAL UNIVERSITY [SG/SG]; 50 Nanyang Avenue, Singapore 639798 (SG). (72) Inventors: DANANJAYA, Putu Andhita; c/o Nanyang Technological University, 50 Nanyang Avenue, Singapore - 639798 (SG). LEW, Wen Siang; c/o Nanyang Techno- logical University, 50 Nanyang Avenue, Singapore 639798 — (SG). = Agent: MCLAUGHLIN, Michael Gerard; Mclaughlin Ip = (74) Pte Ltd, 24a Mosque Street, Singapore 059504 (SG). = Designated States (unless otherwise indicated, for every = (81) kind of national protection available): AE, AG, AL, AM, = AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, = — HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, = = KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, = = SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, _ = TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. = = = (54) Title: MEMORY DEVICE, METHOD OF FORMING THE SAME, METHOD FOR CONTROLLING THE SAME AND MEM- - ORY ARRAY = — — (57) : According to embodiments of the present invention, a memory device is = 600b provided. The memory device includes an electrochemical metallization memory (ECM) k cell and a valence change memory (VCM) cell arranged one over the other. According to 631 further embodiments of the present invention, a method of forming a memory device, a — Il t__. Reactive Liccirmic tortilattic 1 632 ' method for controlling a memory device, and a memory array are also provided. en It, It PD C:r 0 = 04 u t. t tri,ta , - 602 M k A. --, I:isolator II 637 O • —.... `O+ - ,,,? — 0 x3 Sea%etittt. • :ketonic 438 Il 604 0 N FIG. 6D O