baber/WOPTO huggingface dataset:
Patent JP-H08165133-A (JP)
Title: Method for thermally treating glass plate
Inventor: DAIYOKU SEIICHI
IPC: C03B27/012
Filed: 1994-12-07
Abstract: PURPOSE: To provide a method for preventing glass plate from moving on a plate-like body or glass plates from together moving when plural sheets of glass plates are put on the plate-like body composed of a heat-resistant material excellent in evenness in a state in which these glass plates are laminated. CONSTITUTION: In this method for heat-treating glass plate, comprising putting plural sheets of glass plate onto a plate-like body composed of a heat-resistant material excellent in evenness in a state in which the glass plates are laminated and heat-treating these glass plates, the clearance between the plate-like body and the glass plate and the clearance between these glass plates are moistened with water or an alcohol.
Patent JP-H04199641-A (JP)
Title: Semiconductor device and manufacture thereof
Inventor: OMURA SOJI
IPC: H01L21/306
Filed: 1990-11-29
Abstract: PURPOSE:To reduce the dispersion in the drain saturated current by a method wherein a gate electrode is formed by Schottky junction in an active later on the bottom of an opening part piercing a contact layer and a stopper layer so as to form source.drain electrodes in the contact layer on the peripheral part of the opening part. CONSTITUTION:AlGaAs active layer 10, an InGaP stopper layer 11 and a GaAs contact layer 12 are successively formed on a semiinsulating GaAs substrate 9. Next, a GaAs contact layer 12 on the bottom of an opening part 13c is selectively etched away to form another opening 12a using a resist film 31 and an SiO2 film 13 as masks and then the InGaP stopper layer 11 on the bottom of the opening part 12a is selectively etched away using the resist film 31, the SiO2 film 13 and the GaAs contact layer 12 as masks. Next, when a gate electrode 15 comprising an Al film 15 is selectively formed on the exposed GaAs active layer 10 and then the resist film 31 is removed, a Schottky junction (a) is formed between the GaAs active layer 10 and the Al layer 15. Through these procedures, the variation in the drain saturated current can be reduced.
Patent JP-H04200215-A (JP)
Title: Stripping method and device for coiled electric wire
Inventor: ISHIKAWA SUMINORI
IPC: H01R43/00
Filed: 1990-11-28
Abstract: PURPOSE:To remove the disentangled part of a resistance wire more securely by forming an exposed resistance wire section, by cutting the resistance wire and core at a position where the outer layer of the covering of the wire end has been stripped off, before the outer layer of the covering of the wire end is completely removed from the side of the resistance wire, by stripping off the outer layer of the covering of the wire end in the longitudinal direction of the wire. CONSTITUTION:After a cut is made in the outer layer 8 of the covering of an electric wire 10 end by stripping blades 37 in a direction perpendicular to the longitudinal direction of the wire 10, the outer layer 8a of the covering of the end section separated from the main body of the electric wire 10 by the cut is stripped off in the longitudinal direction of the electric wire 10 by the backward movement of both stripping blades 37 according to the backward movement of a piston rod. And the outer layer 8a of the covering of the end section is tried not to be completely separated from the core and resistance wire. Following this, both cutting blades 42 of a cutting-off mechanism 30 descend to a specified cutting position on both sides of an exposed resistance wire section 12, and are closed from an open state. Here the resistance wire and core are cut at a position where the outer layer 8a of the covering of the end section was removed, and an exposed resistance wire section 12 of a specified length (l) is formed.
Patent JP-2000158136-A (JP)
Title: Method for calculating distance between chip and welded material, and method and device for copy controlling weld line
Inventor: HISAGAI KATSUYA
IPC: B23K9/12
Filed: 1998-11-20
Abstract: PROBLEM TO BE SOLVED: To accurately calculate a distance between a chip and a welded material by repeating an arc length/work protrusion length adding arithmetic process, wherein the arc length calculating value and the wire protrusion length calculated value are inputted so as to output the calculated value of the distance between the chip and the welded material. SOLUTION: A wire protrusion length under a transient condition that a wire supply velocity and a wire melting velocity are not equal, can be precisely calculated by a wire melting velocity computing circuit, a wire protrusion length variation computing circuit, and an adding circuit. Therefore, even when the variation velocity of the distance between the chip and the welded material is fast, the distance between the chip and the welded material can be accurately calculated by the following computing circuits VX, VA, LA, and AX, where only constants decided corresponding to a diameter, a material, and a kind of a welding wire, and a kind of a shield gas are used.  Since this method does not depend upon a welding execution condition such as an oscillation frequency, an oscillation amplitude, an average welding current and an average voltage between the chip and the welded material, a copy controlling method always having an optimum control performance is realized.
Patent JP-H03123728-A (JP)
Title: Medical system through skin having norpsoidephedrine as active ingredient
Inventor: TOOMASU HIRURE
IPC: A61M37/00
Filed: 1989-12-22
Abstract: PURPOSE: To obtain a transdermal therapeutic system for administration of antiadipogenics comprising a packing layer through which an active substance is impermeable and a specific pressure-sensitive reservoir layer containing norpseudoephedrine. CONSTITUTION: This therapeutic system comprises a packing layer (e.g. metal foil or polymeric foil) through which an active substance is impermeable, a pressure-sensitive adhesive reservoir layer comprising 10-90wt.% polymeric material, 0-30wt.% softener (e. g. vicinal alcohol or its ester or triglyceride) or its ester or triglyceride) and 0.1-90wt.% norpseudoephedrine and as necessary, releasable protective layer. The polymeric material includes a block copolymer using styrene, 1,3-diene and polyisobutylene as bases, a polymer using (meth) acrylate as a base and an ester of hydrogenated colophonium.
Patent JP-H04202143-A (JP)
Title: Production of 1-ethyladamantane
Inventor: TAKAGI KATSUHIKO
IPC: C07C5/31
Filed: 1990-11-29
Abstract: PURPOSE:To improve yield and selectivity in synthesizing the title compound by using a catalyst system consisting of anhydrous AlCl3 and 1,2-dichloroethane and further preferably carrying out the reaction in the presence of a specific hydrocarbon compound when the title compound is obtained by isomerization of perhydroacenaphthene. CONSTITUTION:When perhydroacenaphthene (A) is isomerized to provide the title substance, the above-mentioned reaction is carried out at 45-55 deg.C, using anhydrous AlCl3 and 1,2-dichloroethane as the catalyst system in an amount (wt. ratio) of 1/3 to 1/8 based on the compound A. 1,2-Dichloroethane which is a component of the catalyst system is preferably used at an amount of 10-20 pts.wt. based on 1 pt.wt. anhydrous AlCl3. In order to readily control the reaction, the reaction is carried out in the presence of a specific hydrocarbon (e.g. cyclohexene, tetralin, acenaphthene or aromatic hydrocarbon). The title compound useful as a raw material for high grade-functional high polymers or medicines can be obtained in high yield.
Patent JP-H10163439-A (JP)
Title: Semiconductor storage device and its manufacturing method
Inventor: WATANABE TAKASHI
IPC: H01L27/108
Filed: 1996-11-27
Abstract: PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes of a DRAM (dynamic random access memory) memory cell which has a cylindrical stack capacitor, and also, increase the capacity of the memory capacitor. SOLUTION: The lower electrode being the storage node of a memory capacitor is made in double structure of an outer cylinder C and an inner cylinder B, and it is connected directly to the source/drain diffusion layer 8 of a transfer gate at the junction A continuous from the inner cylinder B. Within a storage node contact 21, the inside peripheral face of the inner cylinder B is extended approximately to the topside position of the gate electrode 4 of the transfer gate, and also at that section, it is opposed to the cell plate of the memory capacitor so as to increase the effective area of the memory cell capacitor.
Patent JP-H02176243-A (JP)
Title: Non-stage transmission
Inventor: SAKAKIBARA SHIRO
IPC: F16H37/02
Filed: 1988-12-28
Abstract: PURPOSE:To better the feeling of running during coasting-down by providing a forward-to-back switching mechanism with a first power transmission line which is formed via an one-way clutch which engages only in the direction of transmission of power from an engine, and a second power transmission line which is formed via a direct-connection clutch. CONSTITUTION:When the motor of clutches C1, C2 is driven to connect only the clutch C2, the speed range is switched to D2, an input shaft 2 and a carrier 5c are connected together via an one-way clutch F, and a first power transmission line is formed. During acceleration, the driving force of the input shaft 2 is therefore transmitted to a primary pulley 35 via the one-way clutch F and the carrier 5c which rotates in conjunction with rotation of the second clutch C2 and that of a sun gear 5s. During deceleration, the transmission is converted to its free state by means of the one-way clutch F with which the rotation transmission line extending from the pulley 35 is then not engaged. The vehicle is thereby converted to its natural coasting state, the engine break stops its action and the feeling of running is bettered.
Patent JP-H03192246-A (JP)
Title: Photosensitive sheet exposing table
Inventor: YONETANI YOSHIFUMI
IPC: G03B27/32
Filed: 1989-12-21
Abstract: PURPOSE:To eliminate the unevenness of image density by providing a heater line on an exposing table so that it is dense on both end parts in a photosensitive sheet conveying direction and sparse in the center part. CONSTITUTION:The heater line 3 is provided on the exposing tables 1 and 2 so that it may be dense on both end parts in the conveying direction of the photosensitive sheet 4 and sparse in the center part. Since the heater line 3 becomes dense in the center part of the exposing tables 1 and 2 and sparse on both end parts, the surface temperature of the exposing tables 1 and 2 is high on both ends parts and low in the center part in the case of heating the heater line 3. Meanwhile, temperature on both end parts of the exposing tables 1 and 2 is easy to fall by receiving the influence of the outside air and peripheral parts and a temperature difference between the center part and both end parts is eliminated because the temperature on both end parts falls. Therefore, the photosensitive sheet 4 which is heated by the exposing tables 1 and 2 is almost uniformly heated on both end parts and in the center part thereof. Thus the unevenness of the image density is prevented.
Patent JP-H01171350-A (JP)
Title: Automobile telephone set
Inventor: KOMODA MOTOYOSHI
IPC: H04M1/00
Filed: 1987-12-25
Abstract: PURPOSE:To apply external call alert control and external device control through one control line by providing a means outputting a control signal from a 1st terminal when an ignition switch is turned off and outputting the signal from a 2nd terminal when the switch is turned on. CONSTITUTION:With the ignition switch 3 turned on, a relay 6 is always deenergized independently of ground state or open state and a relay 9 is energized when the control line 103 is in ground state. With the ignition switch 3 turned off, only the relay 6 is energized when the control line 103 is in ground state and external call alert is applied by a horn or a lamp connected to terminals 7, 8.
Patent JP-2001156780-A (JP)
Title: Device and method for exchanging data, and program recording medium
Inventor: SARUWATARI RYUSUKE
IPC: H04L12/28
Filed: 1999-11-22
Abstract: PROBLEM TO BE SOLVED: To provide a device and a method for exchanging data, and a program recording medium that can correctly transfer data by using even a sole virtual channel in the case that a mass of data such as packets whose transmission destinations differ is divided in the unit of a plurality of transmission units such as cells and exchanged. SOLUTION: An exchanging section 1 is provided with ports PORTs (i=0-n-1) and conduct exchange processing to convert a label of cells received from one or a plurality of ports PORTs and to output the converted cells to one or a plurality of ports PORTs. A monitor section 2i (i=0-n-1) monitors a cell stream and adjusts it. A table control section 3 that receives a report of detection of cells belonging to a packet to be transferred by a packet transfer VC from the monitor section 2i, decides a transfer destination port of the packet, creates/deletes an entry for transfer by the packet transfer VC into/from a VC table 1a provided in the inside of the exchanging section 1.
Patent JP-H09169089-A (JP)
Title: Laminated film
Inventor: KITAZAWA SATOSHI
IPC: B32B27/36
Filed: 1995-12-20
Abstract: PROBLEM TO BE SOLVED: To obtain a laminated film excellent in slip properties, shaving resistance and blocking resistance by applying an aq. coating soln. containing a binder resin and fine particles with a specific particle size having a core.hair structure on at least the single surface of a polyester film and drying and stretching the coated film to form a coating film. SOLUTION: An aq. coating soln. containing a binder resin and fine particles with an average particle size of 5-2000nm having a core.hair structure is applied to at least the single surface of the polyester film and the coated film is dried and stretched to obtain a laminated film having a coating film. The ratio of the binder resin and the fine particles having the core.hair structure per the total solid in the coating soln. is pref. set so that the binder resin is 65-97wt.% and the fine particles are 3-35wt.%.
Patent JP-H11163025-A (JP)
Title: Manufacture of semiconductor device
Inventor: KIDA TAKESHI
IPC: H01L21/60
Filed: 1997-12-02
Abstract: PROBLEM TO BE SOLVED: To operate bonding without generating breakdown of an electrode due to thermal stress, and to realize adhesion reliability between layers constituting the electrode after bonding. SOLUTION: This method comprises a process for bonding a lead frame 3 to which an IC chip is fixed and the electrode of the IC chip under heating in a temperature Tb, and a process for gradually cooling the IC chip after the bonding process. A mean temperature gradient is set to -2.0 deg.C/second or less from the bonding temperature in the gradually cooling process to a room temperature +5 deg.C. The gradually cooling process is operated by using a heater plate constituted of heaters 8c-8e.
Patent JP-H01172905-A (JP)
Title: Forming method for multi-layer interference pattern
Inventor: UCHIDA MASANOBU
IPC: G02B5/28
Filed: 1987-12-28
Abstract: PURPOSE:To shorten the time for removing the multi-layer remnant by bringing the multi-layer remnant to the center where a third color goes in and thinning Cr in a groove at the time of patterning. CONSTITUTION:On a substrate 1 of glass and solid-state image pickup element, etc., a first multi-layer interference film 2 is formed by vacuum vapor-deposition, etc., and thereafter, a first etching resistance mask 3 is formed so as to cover the remaining part of the first multi-layer interference film and up to the middle part of the third color which comes into contact with said part. Subsequently, a second etching resistance mask 5 is formed so as to cover the remaining part of a first multi-layer interference film 20 and a second multi-layer interference film 4 which have been brought to etching. Next, by using the first etching resistance mask 3 as a lift material, a third multi-layer interference film 6 on the first etching resistance mask 3 is brought to lift-off. Accordingly, the generation place of the multi-layer remnant generated at the time of a second etching process becomes the center where the third color goes in. In such a way, the time for removing the multi-layer remnant is shortened.
Patent JP-H02173759-A (JP)
Title: Toner for electrostatic photography
Inventor: KORI SHUNTARO
IPC: G03G9/087
Filed: 1988-12-27
Abstract: PURPOSE:To prevent filming, spending to carriers, fogging, etc., by using a thermoplastic resin having >=100 deg.C initiation temp. of the loss of weight on heating of the resin and to confining the loss of weight on heating up to 170 deg.C to <=0.3wt.% of the weight over the entire part. CONSTITUTION:The initiation temp. of the loss of weight on heating in the thermogravimetric meter of the thermoplastic resin after solvent removal or washing and drying in the case of executing the solvent removal, washing and drying after synthesis of the resin to remove the plastic material is >=100 deg.C and the weight after the loss of the weight on heating up to 170 deg.C is confined to <=0.3wt.% of the weight over the entire part. The thermoplastic resin which has the softening point sufficient for ordinary fixing and the glass transition point sufficient for the preservable stability and is synthesized by soln. polymn. is preferable. The examples thereof include a copolymer resin of polystyrene or styrene and acryl ester or methacryl ester or a polyester resin synthesized from a diol component and dicarboxylic acid or trimellitic acid. The long-term durability is improved in this way and the fogging, etc., are eliminated.
Patent JP-H02178630-A (JP)
Title: Method and apparatus for forming thin polyimide film
Inventor: AKAGI YOSHIRO
IPC: C08G73/10
Filed: 1988-12-29
Abstract: PURPOSE:To uniformize the thickness of a thin polyimide film and to improve the adhesive property thereof by supplying the vapor of polyimide raw materials consisting of plural monomers to a plasma atmosphere to ionize the vapor, transferring the ions by an electric field onto a substrate surface to stick the ions thereon and heating the substrate in this sticking process, thereby forming the thin polyimide film on the substrate. CONSTITUTION:The quartz glass substrate 5b is mounted to a substrate holder 5 and respectively adequate amts. of pyromellitic dianhydride PMDA and oxydianiline ODA are charged into two monomer housing containers 3. The inside of a vacuum chamber 1 is evacuated to a vacuum and the surface of the substrate is cleaned for several minutes by plasma. A voltage is then applied to a substrate holder 5 in such a manner that the holder serves as a negative electrode by a DC power source 17 for the electric field transfer of the ionized polyimide raw material; further, the substrate 5b is heated and held. The respective monomers are heated to evaporate and the heating rate is so controlled that the respective monomers are deposited by evaporation at each equal molar quantity to accelerate the ions of the PMDA and the ODA and the polymn. precursors thereof and to deposit the ions by evaporation on the heated substrate 5b. The thin polyimide film which is uniform even in the projecting parts of the thin film forming surface without lowering the thickness and has the excellent adhesive property is obtd. in this way.
Patent JP-H02177376-A (JP)
Title: Manufacture of photoelectric conversion device
Inventor: MINAMINO YASUYUKI
IPC: H01L31/04
Filed: 1988-12-27
Abstract: PURPOSE:To prevent an auto-doping from a base layer subjected to doping to an I-type amorphous silicon semiconductor layer by a method wherein before the I-type layer of a photoelectric conversion layer is formed, the P-type or N-type surface of the base layer is performed a plasma treatment with inert gas. CONSTITUTION:An N-type crystallite silicon layer 3n is formed and thereafter, the surface of the layer 3n is performed a plasma treatment in an atmosphere containing inert gas, such as argon gas, helium gas and the like, subsequently, an I-type amorphous silicon semiconductor layer 3i and a P-type crystallite silicon layer 3p are formed. In such a way, by performing a plasma treatment on the surface of the layer 3n, a surface adsorption, which is generated at the time of formation of the layer 3n, and doping atoms of phosphorus existing excessively in the vicinity of the surface of the layer 3n can be removed and an auto-doping from the layer 3n to the layer 3i is prevented.
Patent JP-H06161937-A (JP)
Title: Recognizer for accessory equipment connected to main body equipment
Inventor: TAKAHASHI YOSHINORI
IPC: G06F13/14
Filed: 1992-11-17
Abstract: PURPOSE:To provide a recognizer which can decrease the number of wirings set between a main body equipment and its accessory equipment. CONSTITUTION:A recognizer consists of a control signal line group 11 which sends a control signal to an accessory equipment 20 from a main body equipment 10 via a connector parts 30, a power line group 12 which supplies the power to the equipment 20, and a type signal output line group 1 which is connected in parallel to the group 11. Then the voltage received from the group 12 is sent to the group 13 via a resistor group 14 and the group 11 as a potential difference signal proper to the equipment 20 by the operation of a driver circuit 18 of the group 11. In such a constitution, a recognizer 1 decides the type of the equipment 20 by a judging means 15 based on the potential difference signal.
Patent JP-H01172484-A (JP)
Title: Vibration-damping and sound-insulating material
Inventor: TSURUMARU SHUICHI
IPC: C08K3/18
Filed: 1987-12-28
Abstract: PURPOSE:To obtain the title material improved in vibration-damping performance and sound-insulating property, by mixing a butyl rubber with a vulcanized rubber powder and an iron concentrate slag and molding the obtained mixture. CONSTITUTION:A matte obtained from an automelting furnace in a copper smelting process is subjected to both silication and oxidation by the addition of SiO2 and O2 in a converter, and the formed slag is magnetically separated. The obtained slag is subjected to floatation to recover a copper concentrate, and the residue is dehydrated to obtain an iron concentrate slag (C) of a chemical composition of 2Fe2O.SiO2 (50-40wt.% FeO and 15-30% SiO2), 10-30wt.% Fe2O4, about 5wt.% Fe2O3 and at most 5wt.% MgO, a bulk density of 3-4, a specific gravity of 4-4.2 and a fineness <=100 mesh. 100pts.wt. butyl rubber (A) containing a resin optionally added thereto is mixed with 30-200pts.wt. vulcanized rubber powder (B) such as one formed by grinding a waste vulcanized rubber product such as waste tires, 10-800pts.wt. component C and, optionally, a flame-retarding fiber, an inorganic hydrated compound, etc., (D), and the resulting mixture is molded.
Patent JP-2000165254-A (JP)
Title: Method and system for decoding variable length code decoded in two-way
Inventor: NAGAOKA TOMOTSUGU
IPC: H04N19/70
Filed: 1998-11-24
Abstract: PROBLEM TO BE SOLVED: To obtain a method and a system for decoding a variable length code that can be decoded in two-way where decoding is efficiently processed in both of forward and backward directions regardless of a simple configuration without increasing the processing time. SOLUTION: Among run information DRN, level information DLV, and last information DST obtained by decoding a variable length code, a delay circuit 32 of a forward direction processing section 30 delays the last information DST that is valid of its output at the forward decoding by one code, and a delay circuit 42 of a backward direction processing section 40 delays the run information DRN that is valid of its output at the backward decoding by one code respectively. The last information DST is detected at a head of each block in any of the decoding, and the run information DRN is processed as number of zero coefficients inserted between the sets of the level information DLV processed just before, and then detection of a block border and decoding of unit information into a coefficient string can be realized with similar control.