baber/WOPTO huggingface dataset:
Patent TW-313663-B (TW)
Title: The pick-up head device for accessing disk with different dispersion or thickness
Inventor: CHEN TZYY-GANN
IPC: G11B7/12
Filed: 1996-08-28
Granted: 1997-08-21
Abstract: A pick-up head device for accessing disk with different dispersion or thickness. It includes: Laser diode with 2 different wave-lengths to produce laser beam with different wave-length; Beam splitter is forming an angle with laser diode for doing partially reflection or transparency the beam produced by laser diode; Collimator lens is installed on one side of beam splitter to change the reflection beam, which is passed through beam splitter, into parallel beam;Focusing lens is installed on one side of collimator, and related to disk to focus the parallel beam, which is passed through collimator, on disk;Photo-sensor is installed on another side of beam splitter to incident the beam, which is passed through focusing lens, collimator lens and beam splitter, and can be basis for digital signal and focus tracing.
Patent TW-349036-B (TW)
Title: A key cutter
Inventor: DELLAMORE EDO
IPC: B23Q/
Filed: 1996-11-27
Granted: 1999-01-01
Abstract: A key cutter, the keys consisting of a head (2) and shank (3), the latter being designed for shaping along two or more lines, which includes a tool unit (4) which extends along a vertical axis (Z) and moves along three axes, one of which is the vertical axis (Z), another being a first horizontal axis (Y) transversal to the length of the machine, and the last being a second horizontal axis (X), transversal to the first horizontal axis (Y); a clamp unit (9) for the key (1), located beneath the tool unit (4) and having fourth drive means (10) which allow the unit (9) to rotate about a horizontal axis (XI) parallel with the second horizontal axis (X), so as to position the shank (3) facing the tool unit (4) according to a plurality of positions corresponding to the shaping lines; control means (11) which operate upon the first (6), second (7), third (8) and fourth (10) axis drive and control means, the means being able to coordinate the positioning of the tool unit (4) relative to the key (1) and relative to the rotation of the latter.
Patent TW-342425-B (TW)
Title: Centrifugal pump and fluid impeller therefor
Inventor: ALAN PATON
IPC: F04D1/00
Filed: 1997-01-08
Granted: 1998-10-11
Abstract: A fluid impeller for a centrifugal pump, which comprises: a hub having a substantially disk-like form with first and second surfaces, a center and an edge, circular symmetry, and provision for being rotatably driven; a first plurality of pumping vanes projects substantially perpendicularly from a first surface of the hub and extends radially outwardly from a locus near the center of the hub to another locus near the edge of the hub; and a second plurality of separate and twisted inlet vanes which also projects substantially perpendicularly from the first surface of the hub and extends radially outwardly to the locus near the center of the hub from another locus nearer the center of the hub.
Patent TW-356497-B (TW)
Title: A kind of wood connection device for wooden building and its connection tools
Inventor: HARA TOKAO
IPC: E04B2/70
Filed: 1997-02-14
Granted: 1999-04-21
Abstract: A kind of wood connection device for wooden building, it is formed from: make groove at the longitudinal edge of the first wood material of the two wood materials that are intended to connect with each other, then to make the connection side free edge of the second wood material in sheet into wedge for interlocking, and at the top of the said connection joint formed a insertion for the groove, to make the said groove insertion portion to compress to the aforementioned interlocking free side edge groove and from the outer portion that can provide a moving operation toward the aforementioned first wood material is its characteristics.
Patent TW-319695-B (TW)
Title: Dialysis sample apparatus and method
Inventor: GUO JONQ-SHYONG
IPC: A61J1/00
Filed: 1997-03-31
Granted: 1997-11-11
Abstract: A dialysis sample apparatus comprising: One container constitutes a body and a cover and has a chamber to lay examination sample. Two conduct tubes go through the container. One end of conduct tubes is outside the container and the other end of conduct tubes is inside the container. One dialysis tube laid at the chamber has two ends connected with two conduct tubes. The dialysis and two conduct tubes form a fluid channel. The chemicals of examination sample at the chamber analyzed in the dialysis tube.
Patent TW-322606-B (TW)
Title: Fabrication process of a semiconductor device including grinding of a semiconductor wafer
Inventor: YAMADA YUTAKA
IPC: H01L21/304
Filed: 1997-04-23
Granted: 1997-12-11
Abstract: A method of fabricating a semiconductor device includes the steps of protecting a front surface of a semiconductor substrate by an adhesive medium, grinding a rear surface of the semiconductor substrate in a state that the front surface is protected by the adhesive medium, removing the adhesive medium from the rear surface, and heating the semiconductor substrate, after the step of removing, to a temperature higher than a thermal decomposition temperature of an adhesive provided on the adhesive medium.
Patent TW-413840-B (TW)
Title: Method and apparatus for fabricating an integrated circuit
Inventor: HAYASHI SHINICHIRO
IPC: B05D7/24
Filed: 1997-04-28
Granted: 2000-12-01
Abstract: A method of fabricating an integrated circuit (1110), said method comprising the steps of: (a) providing a liquid precursor (64); (b) placing a substrate (5) inside an enclosed deposition chamber (2); (c) producing a mist (66) of said liquid precursor; (d) reducing the particle size of said mist; (e) flowing said reduced particle size mist through said deposition chamber to form a layer of the precursor liquid on said substrate; (f) treating the liquid layer deposited on the substrate to form a film (1130) of solid material; and (g) completing the fabrication of said integrated circuit (1110) to include at least a portion of said film (1130) of solid material in a component (1112) of said integrated circuit.
Patent TW-350047-B (TW)
Title: Method for computer-aided determination of a system relationship function
Inventor: KAHLERT MARTIN
IPC: G01R29/00
Filed: 1997-06-23
Granted: 1999-01-11
Abstract: A method for computer-aided determination of a system relationship function, being used for description of a set of electronic circuit with connected linear components having any number of unlinear components and linear components, featuring: (a) with definition of a micro-differential program system (201) on the connected linear component, (b) where the determining number (202) of the specific value being for the homogeneous differential system in the differential program system, (c) where for the specific values, for determination of tolerance based on tolerance basis, by ignoring (203) the homogeneous differential program system specific value for such a tolerance basis, (d) where a test being conducted to determine the tolerance less than the predetermined limit (204), (e) where said tolerance not being less than the limit, for definition of the specific value for performance of this method steps (b) through (d) until the tolerance remains less than the limit (205), (f) where in case of tolerance less than the limit, the system function based on the specific value (206) for description of the differential program.
Patent TW-359007-B (TW)
Title: Production-method for an isolation-layer acted as intermetal-dielectric
Inventor: GABRIC ZVONIMIR
IPC: H01L23/522
Filed: 1997-07-11
Granted: 1999-05-21
Abstract: Production method for an isolation-layer acted as intermetal-dielectric (IMD), including the following steps: (a) coating the surface of the substrate (2) with the first insulation layer (3), (b) coating the first insulation layer (3) with a metal layer; (c) structuring the metal-conductive track (4) in the metal layer with photo steps, (d) coating the metal-conductive track (4) surface and the side with second insulation layer (7), (e) removal of the second insulation layer (7) on the first insulation layer (3) and between the metal-conductive track (4), (f) deposition of the third insulation layer (8) by ozone-driven CVD on the structured substrate, with the selection of the first insulation layer (3) and the second insulation layer (7), making the third insulation layer (8) on the first insulation layer (3) at a speed higher than that of the second insulation layer (7).
Patent TW-342495-B (TW)
Title: Master information carrier, method of producing the same, and method for recording master information signal on magnetic recording medium
Inventor: ISHIDA TATURO
IPC: G11B5/64
Filed: 1997-07-16
Granted: 1998-10-11
Abstract: A master information carrier characterized in that: information signals are recorded to the master information carrier used by a magnetic recording medium; projections and recesses corresponding to the signals are formed on and in a surface of a base body; a surface of at least the projections of the projections and recesses is constituted of a ferromagnetic material.
Patent TW-351853-B (TW)
Title: Method and apparatus for making semiconductor device
Inventor: YAMANAKA TOSHIAKI
IPC: H01L27/105
Filed: 1997-07-30
Granted: 1999-02-01
Abstract: A method for fabricating a semiconductor memory device comprises the following processes: a process to form on a surface of a semiconductor substrate a memory grid region, a peripheral circuit region and a plurality of MIFET, a process to deposit a first insulation layer on the MIFET, a process to form on the first insulation a first wiring electrode of a first conductive film, a process to deposit a second insulation layer on the first insulation layer and a first wiring electrode, a process to deposit on the first wiring electrode the second insulation layer, a process to create a capacitor on the second insulation layer in the memory grid region, a process to deposit a third insulation layer on the capacitor formed memory grid region and the peripheral circuit region, and to planarize the surface of the third insulation, a process to selectively remove the third insulation layer in the peripheral circuit region, a process to remove the second insulation layer in the peripheral circuit region on the third insulation layer has been erased, and to remove the second conductive film which is deposited on the memory grid region, the second conductive film left on the round shape will constitute a second wiring electrode.
Patent TW-358991-B (TW)
Title: Tape automatic weld ball-type semiconductor package
Inventor: CAI WEI-REN
IPC: H01L21/56
Filed: 1997-08-14
Granted: 1999-05-21
Abstract: A tape automatic weld ball-type semiconductor package (2), including: taking of substrate having polyimide of single-face copper; dry film first bonding/exposure/development on the surface of the substrate; electroplating of copper, nickel, gold and nickel as multiple plating on the surface not covered by the first dry film; removal of the first dry film; laser etching to the substrate polyimide film by controlling the anti-laser energy with the block of the thin copper, for forming perforated graphics not going through; bonding of the second dry film on the substrate surface, for protection of the surface plating; electrolysis in the holes of the polyimide film for forming of stuffed holes and electrolysis plating contacts slighting outward; removal of the second dry film; etching of the exposed thin copper between the multiple plating, making the adjacent electric plating layers separate one from the other and removal by etching the electro nickel layer on the multiple electric plating, making the electroplating be exposed; laser drilling in the center of the substrate and the desired through position, for forming the chip installation hole and the laser through hole on the substrate, making the installation hole formed with an exterior by multiple contact suspension arms, for welding of chips.
Patent TW-358961-B (TW)
Title: Substrate processing device
Inventor: OSHINOWO JOHN DR
IPC: H01L21/00
Filed: 1997-10-04
Granted: 1999-05-21
Abstract: A substrate (2) processing device, having a container (12) for processing fluid, which flows into the container from the bottom (1) of the container, including, the container bottom (1 in the same shape that of the substrate (2) to be processed.
Patent TW-358302-B (TW)
Title: Digital convergence correction device and the display
Inventor: NAKAJYO TOSHIFUMI
IPC: H04N3/26
Filed: 1997-10-06
Granted: 1999-05-11
Abstract: A digital convergence correction device, having a memory, for saving the correction data at the corresponding convergence correction point on the display; and address counter, synchronized to the screen scanning, for generation of a reading address to the memory; for generation of convergence correction signals based on the corrected data as read, including: vertical display range detecting circuit, which, based on the vertical output current, generates and outputs the vertical display range detection signals corresponding on the vertical and upward direction in the screen image display; and address control circuit, for controlling of the address counter based on the detecting signals in the vertical display range.
Patent TW-386250-B (TW)
Title: Method and apparatus for reducing the first wafer effect
Inventor: NGAN KENNY KING-TAI
IPC: C23C14/34
Filed: 1998-03-30
Granted: 2000-04-01
Abstract: A method and apparatus for significantly reducing and even eliminating the First Wafer Effect is disclosed. In a first aspect, the First Wafer Effect is reduced by heating a deposition chamber (following an idle period) to its steady-state temperature by using a coil to which RF power is applied. In a second aspect, the First Wafer Effect is recuced by similarly heating a deposition chamber (following an idle period) to a temperature greater than its steady-state temperature and then cooling the chamber to its steady-state temperature. Preferably a gas is flowed into the deposition chamber in both the first and second aspects to increase the chamber's heating rate. Further, a DC voltage may be applied to the deposition chamber's target to cause sputtering of target material on non-production objects for target conditioning.
Patent TW-376596-B (TW)
Title: IC for radio receiver
Inventor: TOMIYAMA HITOSHI
IPC: H04B1/26
Filed: 1998-04-28
Granted: 1999-12-11
Abstract: The radio receiver of the present invention is provided with a local oscillation circuit, a mixing circuit to perform a frequency conversion from a received signal into an intermediate frequency signal by using an oscillation signal generated by the oscillation circuit, an ALC circuit to detect a level of the oscillation signal and control the level of the oscillation signal at a specified value, and switching means to switch the operation of the ALC circuit from the operational state to the non-operational state and vice versa. The receiver thus constructed will not receive a bad influence from the image signal, and even when the receiver is used in an area where a strong interference wave is present, the receiver is able to operate the local oscillation circuit in a normal condition.
Patent TW-529997-B (TW)
Title: Biaxially-oriented metallocene-based polypropylene films
Inventor: WHEAT WILLIAM R
IPC: B29L7/00
Filed: 1998-07-28
Granted: 2003-05-01
Abstract: A process for the production of biaxially-oriented polypropylene film involving the provision of a polypropylene polymer produced by the polymerization of propylene in the presence of a metallocene catalyst characterized by a bridged racemic bis(indenyl) ligand substituted at the proximal position. The polypropylene contains 0.5 to 2% 2, 1 insertions and has an isotacticity of at least 96% meso pentads and at least 99% meso diads. The film is formed by stressing the polymer produced from a slot die in the machine direction at a stretch ratio of about 5 or 6 and in the transverse direction at a stretch ratio of about 8 or 9 to produce a biaxially-oriented film having a non-uniform melt temperature of a peak value of less than 160 DEG C. The polypropylene polymer has meltflow index of less than 5 grams per 10 minutes and has an average molecular weight within the range of 100,000-400,000 grams per mole. The film, when configured having a thickness of 18 microns, is characterized by a machine direction secant modulus of at least 1400 MPa, a transverse direction secant modulus of at least 2200 MPa, a kinetic film-to-film co-efficient of friction of no more than 0.5, and permeabilities to water and oxygen of no more than 2.6 g/m<2>/d and 2400 c<3>/m<2>/d, respectively. The film is further characterized by shrinkage factors of at least 8% in a transverse dimension and at least 16% in a transverse direction when heated to a temperature of at least 140 DEG C.
Patent TW-398991-B (TW)
Title: Exhaust gas energy recycling system
Inventor: JUNG CHIN-SHIAN
IPC: B01D53/34
Filed: 1998-11-13
Granted: 2000-07-21
Abstract: There is disclosed an exhaust gas energy recycling system, which includes a washing tower, a heat exchanger, an ice water machine and a cooling tower. The exhaust gas of the general semiconductor plant is processed in washing tower before being exhausted. The heat exchanger performs the energy recycling process to the gas and expels the gas to the atmosphere. Therefore, the purposes of energy-saving and water-saving are achieved, and the environmental pollution is alleviated.
Patent TW-409490-B (TW)
Title: The equipment for plug hole process and the method thereof
Inventor: LIAU BEN-YU
IPC: B29C39/10
Filed: 1998-12-31
Granted: 2000-10-21
Abstract: A manufacture method of plug hole and the equipment thereof. Firstly, provide one base seat sited on the bottom portion of the closed coating chamber, to put the printed circuit board substrate and the stencil on the base seat in order, and proceed alignment step. Then, put suitable quantity of plug hole paste on the stencil; and, the plug hole paste is being heat treated beforehand. Adjust the pressure of the closed coating chamber to the first pressure, proceed plug hole paste coating, form the plug inside the void of the printed circuit board. Then, adjust the pressure of the closed coating chamber to the second pressure, remove the bubble inside the plug. Then, adjust the pressure of the closed coating chamber to the third pressure, scraping off the plug hole paste, to scrape off the excess plug hole paste.
Patent TW-404068-B (TW)
Title: The capacitor with floating gate structure
Inventor: CHEN BO-AN
IPC: H01L29/78
Filed: 1999-04-20
Granted: 2000-09-01
Abstract: A capacitor which could completely maintain the fixed capacitor value and adjust its capacitance value in a simple way, which maintains a constant saturated voltage by a floating gate layer and makes first dielectrics and second dielectrics on the upper region and lower region of said floating gate layer have a constant capacitance value; further, it makes said capacitor maintain a constant capacitance value.
Patent TW-417026-B (TW)
Title: Method of making optical fibers
Inventor: BERKEY GEORGE EDWARD
IPC: C03B37/027
Filed: 1999-04-23
Granted: 2001-01-01
Abstract: An optical fiber and method of making, wherein the optical fiber alternates between regions having different diameters along its length, wherein the refractive index of said blank and the diameters of said fiber are chosen to result in a fiber having alternating regions of positive and negative dispersion at a wavelength which is greater than 1480 nm, yet preferably has a low net dispersion and dispersion slope. A preferred such profile consists of a core region surrounded by a cladding region, said core region comprised of an central core region which is undoped with respect to said cladding region, said central core region surrounded by a moat region which id downdoped with respect to said cladding region, and said moat region is surrounded by an annular ring region which is updoped with respect to said cladding region.
Patent TW-416210-B (TW)
Title: Signal switching method of Internet Phone
Inventor: YANG WEN-WEI
IPC: H04M7/00
Filed: 1999-06-22
Granted: 2000-12-21
Abstract: The invention relates to a signal switching method of Internet Phone, which is used in between a calling party and receiving party. The signal switching method is that when calling party intends to inform receiving party to be on line, calling party will send a special ring signal to receiving party and hang up the phone right after the first ring back tone. And after receiving party receives the special ring signal, mask the first ring and automatically dial up the ISP to connect to Internet and activate the Internet Phone function to proceed conversation with calling party on  the Internet Phone if the second ring is not heard within a preset time.
Patent TW-446767-B (TW)
Title: Acrylonitrile-based precursor fiber for carbon fiber and production thereof
Inventor: OKUYA TAKAHIRO
IPC: D01F9/22
Filed: 1999-07-22
Granted: 2001-07-21
Abstract: The present invention relates to an acrylonitrile-based precursor fiber for carbon fiber, comprising 96.0 to 98.5 wt% of acrylonitrile, having a tensile strength of more than 7.0 cN/dtex, a tensile elasticity of more than 130 cN/dtex, a iodine adsorption of less than 0.5 wt% based on per fiber, a crystalline orientation π of more than 90% according to broad angle X-ray diffraction, and a variation coefficient of tow fineness of less than 1.0%,. Owing to the precursor fiber having high strength, high elasticity, high compactness, high orientation and small variation coefficient of tow fineness, a high quality carbon fiber can be inexpensively produced through a shorter-time baking.
Patent TW-415020-B (TW)
Title: Method for reducing erosion of anti-reflective coating layer in the etching back process
Inventor: SHEN YUN-HUNG
IPC: H01L21/762
Filed: 1999-07-28
Granted: 2000-12-11
Abstract: This invention relates to a method for reducing erosion of anti-reflective coating layer in the etching back process. A metal wiring line is formed over a substrate and an anti-reflective coating layer is formed on the wiring line. A dielectric layer is then formed on the substrate and the anti-reflective coating layer and a spin-on-glass (SOG) is coated on the dielectric layer. The dielectric layer and the SOG layer are etched back until the anti-reflective coating layer is exposed. The etching back step of the present invention is performed by plasma containing inert gas and fluorine gas, and the substrate is washed by inert gas in order to lower down the temperature thereof. A plasma etching process including inert gas and fluorine gas is employed, and simultaneously the backside of the substrate is washed by the inert gas.
Patent TW-475994-B (TW)
Title: Memory testing device
Inventor: SATO KAZUHIKO
IPC: G01R31/28
Filed: 1999-09-22
Granted: 2002-02-11
Abstract: This invention relates to a memory testing device for testing non-volatile memory such as flash memory, flash EEPROM or flash E2PROM (flash electrically programmable read only memory), which is electrically erased and written by a whole byte or block as a unit. The purpose of this invention is to provide a memory testing device capable of testing the block function of memory such as the flash memory in a short time. To achieve the purpose, there are formed a 1st-bad block memory BBM and a 2nd-bad block memory CFM with the storage capacity corresponding to the number of the blocks which examined memory MUT has in addition to the failure-analysis memory AFM. The 1st-bad block memory BBM is stored with the result of an initial test. The result of the initial test is used as mask data. The bad block, that is determined to be bad in the initial test, is masked, so that the functional test is neglected and only the passed block is processed by a functional test. The result of the functional test is stored in the 2nd-bad block memory. Only the block of the bad block memory data stored in the 2nd-bad block memory is determined whether to perform a rescue judgment processing.