baber/WOPTO huggingface dataset:
Patent TW-245812-B (TW)
Title: Deep submicron device process
Inventor: HORNG YEUN-DING
IPC: H01L21/335
Filed: 1994-05-14
Granted: 1995-04-21
Abstract: A deep submicron device process with fully overlapped lightly doped drain includes: 1. forming one isolating layer on Si substrate and one gate indent through one gate photomask etching; 2. implementing lightly doped ion implantation on indent position to form lightly doped area in the Si layer; 3. forming one gate oxide by oxidizing the gate indent; 4. depositing to form the first polysilicon layer and distributing the material with equal thickness on the two sides of indent; 5. implementing ion implantation of channel doping to make the lightly doped area cut with left, right parts; 6. forming oxide layer with proper thickness on the first polysilicon layer; 7. implementing anti-punch through stop ion implantation to form anti-punch through stop area aligned with the channel central position; 8. etching to remove surface oxide; 9. depositing to form the second polysilicon layer overlapping and contacting with the first polysilicon layer; 10. doping the first/second polysilicon; 11. etching and planarizing the first/second polysilicon, and leaving only the first/second polysilicon in the indent; 12. removing isolating layer outside the indent and implementing source/drain ion implant to form component source/drain area; By the indent position, implementing each ion implant and depositing material layer to form different implantation layer to form fully overlapped lightly doped device.
Patent TW-354244-B (TW)
Title: Aqueous, multiphase, stable finished formulation for crop protection active compounds and its preparation
Inventor: WIGGER AUGUST
IPC: A01N25/04
Filed: 1994-06-30
Granted: 1999-03-11
Abstract: An aqueous multiphase, stable finished formulation for crop protection active compound containing, in addition to water, (a) 10 to 700 g/l of one or more crop protection active compounds; (b) 10 to 700 g/l Pluronic PE 10500; (c) 5 to 80 g/l of an anionic dispersant; (d) 5 to 500g/l of one or more moisturizing agent selected from the aliphatic alcohol of polyoxyethylene and polyoxyethylene-polyoxypropylene; (e) 0.5 to 5 g/l of one or more condensing agent; and (f) aromatic hydrocarbon.
Patent TW-347483-B (TW)
Title: Radiation inductive composition
Inventor: MUNIRATHNA PADMANABAN
IPC: C08L25/18
Filed: 1995-02-24
Granted: 1998-12-11
Abstract: A radiation sensitive composition comprising a) a copolymer represented by the formula: --(CH2 --CHR)m --(CH2 --CR1 R2)n -- where R is a hydroxy-substituted aryl, in which R is or is not further substituted with alkyl, where the hydroxyl group is or is not partially protected by an acid cleavable group, R1 is hydrogen or a methyl group, R2 is a phenyl, alkyl-substituted phenyl, halogenated phenyl, or acrylate group, and m and n are integers of 1 or more, b) a polyacetal represented by the general formula: --(CHR3 --O--R4 --X--NR5)p -- R3 is an alkyl, aryl, or substituted aryl group, R4 is an alkyl, cycloalkyl , alkene, or alkyne group, R5 is an alkyl, alkene, alkyne, or cycloalkyl group, X is --OCO--, --CO--, or --NHCO--, and p is an integer of 1 or more, c) a radiation sensitive compound capable of generating an acid upon exposure to actinic radiation, d) a base capable of degrading into a neutral compound upon exposure to actinic radiation, and e) a solvent for dissolving the components a), b), c), and d).
Patent TW-301058-B (TW)
Title: Method of fabricating semiconductor memory cell with floating gate
Inventor: UEN WENN-YNG
IPC: H01L27/115
Filed: 1995-08-07
Granted: 1997-03-21
Abstract: A method of fabricating semiconductor memory cell with floating gate comprises of the following steps: (1) growing one thin oxide one semiconductor substrate; (2) depositing one polysilicon on the thin oxide; (3) depositing one silicon nitride on the polysilicon; (4) masking and etching the silicon nitride until one oxide container trench is formed in the silicon nitride, in which the oxide container trench has one horizontal axis parallel with horizontal axis of to-be formed floating gate, and longer than determined width of to-be formed floating gate, the oxide container trench and floating gate region that will be formed on the polysilicon; (5) growing one polysilicon oxide on the oxide containing trench; (6) removing the silicon nitride; (7) supplying one mask in which the mask is transversal to the polysilicon and has one width same with predetermined one of to-be formed floating gate, the mask overlays the polysilicon portion where is directly on the floating gate region; (8) etching the polysilicon left portion where is not overlaid by mask;(9) removing the mask; and (10) with the portion of the polysilicon oxide as one mask etching the polysilicon so as to form the floating gate.
Patent TW-278235-B (TW)
Title: The manufacturing method for semiconductor memory device
Inventor: TANAKA HIDEYUKI
IPC: H01L27/112
Filed: 1995-11-28
Granted: 1996-06-11
Abstract: A semiconductor memory device manufacturing method for memory cell array constructed by matrix array MOS transistors, and selectively changing the critical value by mask program. Its feature includes: Process to construct gate electrode multi-MOS transistor from the polysilicon layer and laminar layer of other material; and Process to form photo resistor pattern with open hole on the pre-set critical value MOS transistor zone; and Process to side etch the polysilicon layer through the hole of the photo resistor pattern; and Process to dope the ploy lateral dopant to get the diffusion layer with critical value passage.
Patent TW-363957-B (TW)
Title: Process for producing 2-(2-hydroxymethyl-phenyl) acetamide derivatives and intermediates for the production
Inventor: TAKASE AKIRA
IPC: C07C249/08
Filed: 1995-12-23
Granted: 1999-07-11
Abstract: A process for producing a compound of the formula (I), as defined in the specification, wherein R1 and R2 are the same or different and are hydrogen or an alkyl group, R is hydrogen or an alkyl group, and ~ is any configuration of E-isomer, Z-isomer or a mixture thereof, which comprises removing a protective group (P) of a hydroxyl group of the compound of the formula (II) as defined in the specification, wherein P is a protective group (P) of a hydroxyl group, and the other symbols are as defined above; and intermediates for the production of the compound of the formula (I).
Patent TW-354304-B (TW)
Title: Copolyetherester
Inventor: BUNING GERARD HIDDE WERUMEUS
IPC: C08G63/16
Filed: 1996-01-27
Granted: 1999-03-11
Abstract: A copolyetherester containing hard segments derived from a glocol and at least two dicarboxylic acids or esters thereof, chosen from the group comprising 2,6-naphthalenedicarboxylic acid, 4-4^-diphenyldicarboxylic acid and terephthalic acid, and soft segments derived from the group comprising poly (alkylene oxide); the content of each dicarboxylic acid is less than 70 mol% of total content of two dicarboxylic acids.
Patent TW-421747-B (TW)
Title: Value transfer system
Inventor: EVERETT DAVID BARRINGTON
IPC: G06Q20/36
Filed: 1996-05-10
Granted: 2001-02-11
Abstract: The invention is concerned with systems for transferring value between electronic purses, usually in the form of IC or ""Smart"" cards, via the intermediary of an interface device. In order to control the flow of value between purses a hierarchical class structure is proposed. This is achieved by assigning to each purse a class which controls the conditions under which value may be transferred to and from (mainly from) a purse. Thus each purse stores in memory a representation of its own class, together with a list of those classes to which the purse can transfer value.
Patent TW-437145-B (TW)
Title: DC-DC converter
Inventor: MORISHIMA YASUYUKI
IPC: H02M3/04
Filed: 1996-07-04
Granted: 2001-05-28
Abstract: The purpose of this invention is to provide a low-cost DC-DC converter whose positive and negative output voltages can be surely controlled. A switching element 12 is connected to one end of a primary winding 11 and the other end of which is connected to a power source 10. A serial circuit of the first diode 14a and the first capacitor 15a is connected between the output side of the secondary winding 13 magnetically connected with the primary winding 11 and a grounding potential 16. In addition, the second diode 14b is connected between the connecting point A for the first diode 14a as well as the first capacitor 15a and the grounding potential 16. At this time, the anode of the first diode 14a is connected to the first capacitor 15a and the anode of the second diode 14b is connected to the grounding potential 16. Additionally, a serial circuit of the third diode 14c and the second capacitor 15b is connected between the connecting point for the secondary coil 13 as well as the first capacitor 15a and the grounding potential 16. The fourth diode 14d is connected between the connecting point B for the third diode 14c as well as the second capacitor 15b and the grounding potential 16. At this time, the cathode of the third diode 14c is connected to the second capacitor 15b and the cathode of the fourth diode 14d is connected to the grounding potential 16. Moreover, a control circuit 17 is connected between the cathode of the first diode 14a and the base of the switching device 12 so as to form a feedback circuit.
Patent TW-338843-B (TW)
Title: Semiconductor IC
Inventor: WASHIDA TETSUO
IPC: H01L27/00
Filed: 1996-10-28
Granted: 1998-08-21
Abstract: A sort of semiconductor IC device having: semiconductor chip including the transistor circuit formed by: package for the packing of said semiconductor chips; and a plurality of leads embedded on at least 2 sides of said package formed such that one end protrudes from the side and connected electrically to said circuit, with connection of the lead electrode of the installation base plate and the connection in predetermined length of one end of the leads as a semiconductor IC device, featuring: embedding in said package on both sides of the plurality of leads on said sides in such a way that one ends protrudes the side and the end joined the electrode of said installation base plate of a joint of predetermined length and a higher width than the dummu of the lead.
Patent TW-304232-B (TW)
Title: The wide band polarizer with multi-layers film
Inventor: TZOU YI-REN
IPC: G02B27/28
Filed: 1996-11-23
Granted: 1997-05-01
Abstract: A wide band polarizer with multi-film includes: A 1st cubic polarizer for dividing the injection light into through light and reflection light; A 2nd cubic polarizer with a P polarized plane parallel with P polarized plane of 1st cubic polarizer; A 3rd cubic polarizer with a P polarized plane vertical with P polarized plane of 1st cubic polarizer.
Patent TW-410457-B (TW)
Title: Misergistration detecting marks for pattern formed on semiconductor substrate
Inventor: HIRUMA TAKAMI
IPC: G03F1/42
Filed: 1996-12-16
Granted: 2000-11-01
Abstract: A semiconductor device according to the present invention has misregistration detecting marks provided in the periphery of a semiconductor chip. The mis-registration detecting marks consist of a first scale mark for detecting misalignment in a first direction, a second scale mark for detecting misalignment in a second direction perpendicular to the first direction, and a third scale mark for detecting misalignment in a third direction making respectively specified angles with the first direction and the second direction.
Patent TW-387919-B (TW)
Title: Propylene-ethylene copolymer, preparation thereof and molding thereof
Inventor: SAITO JUN
IPC: C08J5/00
Filed: 1997-01-07
Granted: 2000-04-21
Abstract: This invention provides propylene-ethylene copolymer which gives a molding having an excellent heat resistance and film having both heat sealing in low temperature and rigidity, preparation thereof and molding. A propylene-ethylene copolymer comprising 0.01-15 mol% of ethylene unit, characterized in that in a chain structure in accordance with nuclear magnetic resonance spectrum, triad fraction (PEP), triad fraction (EEE) and <alpha>, <beta>-methylene carbon number fraction (N<alpha><beta>) are in a specific scope; the weight average molecular weight is 50000-1500000, and the distribution of molecular weight is 1.2-3.8. Said copolymer can be prepared by copolymerizing ethylene with propylene in the presence of a catyst comprising a combination of a specific chiral transition metal compound (metallocene) and aluminoxane.
Patent TW-462967-B (TW)
Title: Hyroxamic acid derivatives useful for the treatment or prophylaxis of disorders associated with excess production of s-CD23
Inventor: BAILEY STUART
IPC: A61P25/28
Filed: 1997-01-30
Granted: 2001-11-11
Abstract: Compounds of formula (I), wherein R and R3 are each independently hydrogen, alkyl, alkenyl, alkynyl or aryl; R1 is arylmethyl; and R2 is alkyl, alkenyl, aryl, cycloalkyl or cycloalkenyl, and pharmaceutically acceptable derivatives thereof, are useful in the treatment and prophylaxis of disorders in which the overproduction of sCD23 is implicated.
Patent TW-338053-B (TW)
Title: Mono-olefin/polyene interpolymers, method of preparation, composition containing the same and articles made thereof
Inventor: JESUS NIETO PALOMO
IPC: C08K5/57
Filed: 1997-02-15
Granted: 1998-08-11
Abstract: A kind of interpolymer comprised of ethylene, α-olefin having 3 - 18 carbon and a non-conjugated α-ωdiene having at least 7 carbon atoms and having two readily polymerizable double bonds; the content of α-olefin having 3 - 18 carbon is at most 17 mol% and that of the non-conjugated α-ωdiene ranges from 0.005 ~ 0.7 mol%, the density (d) of the interpolymer is 0.85~0.97 g/cm3 as measured by ASTM D-792; the melt parameter I2 under the condition of 190 deg. C/2.16kg is 0.001 ~ 50g/10min by ASTM D-1238; and the melting tension of the interpolymer satisfies the following relationship: MT>1.328-0.7879log (I2) + 22.5 (d-0.85) - 40.56 {log (I2)}x (d-0.85), in which, MT represents the melt tension in grams.
Patent TW-438861-B (TW)
Title: Copolymerized polyimide, copolymerized polyimide resin molded articles and the method of preparation thereof
Inventor: SAWAZAKI KOICHI
IPC: C08L79/08
Filed: 1997-02-20
Granted: 2001-06-07
Abstract: The invention provided a copolymerized polyimide copolymerized polyimide molded articles and a method of preparation thereof, having a high elasticity, low heat expansibility such as the metal, low water absorption. A block component of the polyimide is made up of the rigid consitution of the aromatic diamine compounds and of the rigid constitution of the aromitic diamine compounds and aromatic tetra carboxylic acid compounds, a random component of the copolymerized polyimide are made up of the flexible constitution of the aromatic diamine compounds and at least two of the aromatic tetra carboxylic acid compounds and taken in the molecular linkage to be made the copolymerized polyimides.
Patent TW-370739-B (TW)
Title: Multiplication circuit
Inventor: YOSHIZAWA AKIHIKO
IPC: H03L7/22
Filed: 1997-03-31
Granted: 1999-09-21
Abstract: It is difficult to obtain stable multiplication signals, while multiplication signals of large multiplication ratio are required, using a phase locked loop (PLL) of a voltage controlled oscillation initiator to form a multiplication circuit, because of the increased frequency width of the voltage controlled oscillation initiator increases the effect of sound in controlling the voltage. And also, the circuit scale is increased while using a voltage controlled lag circuit to form a multiplication circuit. So the multiplication ratio of the first stage multiplication circuit is the largest using plural multiplication circuits connected in series. And at least one circuit used in the multiplication circuit should be the type of a voltage controlled lag circuit.
Patent TW-329513-B (TW)
Title: Detector and method for detecting defects in the magnetic media of a mass storage system
Inventor: KERRY C GLOVER
IPC: G11B27/36
Filed: 1997-04-14
Granted: 1998-04-11
Abstract: A detector which provides a transition signal includes: A metric circuit which operates to receive discrete equalized signal and responds to generate a transition signal as the output of the detector; and A trellis circuit which operates to receive the transition signal, proceeds with sequential decoding, and responds to provide a digital data output signal.
Patent TW-463164-B (TW)
Title: Laser illuminator and optical system for disk patterning
Inventor: HACKEL LLOYD A
IPC: B23K26/06
Filed: 1997-06-13
Granted: 2001-11-11
Abstract: Magnetic recording media are textured over areas designated for contact in order to minimize friction with data transducing heads. In fabricating a hard disk, an aluminum nickel-phosphorous substrate is polished to a specular finish. A mechanical means is then used to roughen an annular area intended to be the head contact band. An optical and mechanical system allows thousands of spots to be generated with each laser pulse, allowing the textured pattern to be rapidly generated with a low repetition rate laser and an uncomplicated mechanical system. The system uses a low power laser, a beam expander, a specially designed phase plate, a prism to deflect the beam, a lens to transmit the diffraction pattern to the far field, a mechanical means to rotate the pattern and a trigger system to fire the laser when sections of the pattern are precisely aligned. the system generates an annular segment of the desired pattern with which the total pattern is generated by rotating the optical system about its optic axis, sensing the rotational position and firing the laser as the annular segment rotates into the next appropriate position. This marking system can be integrated into a disk sputtering system for manufacturing magnetic disks, allowing for a very streamlined manufacturing process.
Patent TW-343423-B (TW)
Title: Method of making a laminate comprising a conductive polymer composition
Inventor: EDWARD F CHU
IPC: B41D7/00
Filed: 1997-07-28
Granted: 1998-10-21
Abstract: A method of making a laminate from a conductive polymer composition comprising (I) a polymeric component and (ii) a particulate conductive filler dispersed in the polymeric component, the method comprising the following steps conducted sequentially in a single continuous procedure: (A) loading the polymeric component and the conductive filler into a mixing apparatus; (B) mixing the polymeric component and the conductive filler to form a molten mixture; (C) transporting the molten mixture from the mixing apparatus through a die; (D) forming the molten mixture into a polymeric sheet; and (E) attaching metal foil to at least one side of the sheet to form a laminate.
Patent TW-334625-B (TW)
Title: Semiconductor device
Inventor: KATOU KATSUHIRO
IPC: H01L23/52
Filed: 1997-08-05
Granted: 1998-06-21
Abstract: A device comprises a P-type substrate 10, a substrate potential generator 80 to apply an electric potential, a CMOS inner circuit 12, an electrostatic-breakdown prevention protection device 74 and a latch up prevention protecting device. The latch up prevention protecting device has an N-type first diffusion region 90 on the P-type substrate 10. In the first diffusion region 90, an N-type second diffusion region 92 connected to an input terminal, and a P-type third diffusion region 94 to which a power-source voltage Vcc is applied, are provided. The first diffusion region 90 is surrounded by an N-type fourth diffusion region 96 to which a ground voltage Vss is applied, in a flat pattern. By the way, to provide a semiconductor device which ensure latch up resistance and electroststics breakdown.
Patent TW-467873-B (TW)
Title: A method of making a composite product, a composite product and a chemical treatment for applying to fibers
Inventor: WOODSIDE ANDREW B
IPC: C03C25/26
Filed: 1997-08-08
Granted: 2001-12-11
Abstract: In one general aspect, the invention involves applying a chemical treatment to fibers, such as reinforcing fibers suitable for making a composite article, so as to size and/or preimpregnate the fibers. The chemical treatment has a relatively low viscosity and is substantially solvent-free and non-radiation curable. Heat energy may be employed to lower the viscosity and improve the wetting ability of the applied treatment and/or to increase the molecular weight of, or otherwise cure, the treatment with essentially no generation of solvent vapor. The treated fibers are used to form a composite strand, which may be subsequently processed in-line or off-line into a composite article having fibers disposed in a polymeric matrix. Another general aspect relates to encased composite strands, in thread or pellet form, and to wire-coating methods and apparatus for making them. The strands are moldable into fiber-reinforced thermoplastic composite articles. Each strand is made from fibers, including reinforcing fibers and optionally fibers of a matrix material, that are impregnated with a chemical treatment so that the treatment is disposed between substantially all of the fibers.
Patent TW-394846-B (TW)
Title: Adaptable scan chains for debugging and manufacturing test purposes
Inventor: BAEG SANG-HYEON
IPC: G01R31/3185
Filed: 1997-09-02
Granted: 2000-06-21
Abstract: Scan chains to support debugging and manufacturing test modes for integrated circuit chips are made adaptable. Scan chains may be configured either in a multiple scan chain JTAG mode or in a multiple independent and parallel scan chain mode. The configuration transition between the scan modes is made by private instructions implemented in a JTAG controller, which supports the IEEE 1149.1 standard.
Patent TW-394987-B (TW)
Title: Method for forming field oxide film of semiconductor device
Inventor: JANG SE-AUG
IPC: H01L21/762
Filed: 1997-10-22
Granted: 2000-06-21
Abstract: A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.
Patent TW-366320-B (TW)
Title: A method of marking a full contact floating roof for a vessel
Inventor: ROSENKRANTZ DAVID J
IPC: B65D88/34
Filed: 1996-05-03
Granted: 1999-08-11
Abstract: A full contact floating roof for a storage vessel includes a plurality of panels wherein each panel includes a core disposed between upper and lower skins. A plurality of closures are provided wherein each closure is secured to perimeter edges of a panel by welding the closure to at least one of the upper and lower skins. A plurality of fasteners connect adjacent closures thereby forming the floating roof.
Patent TW-373252-B (TW)
Title: Exposure method, exposure apparatus and method of producing exposure apparatus
Inventor: YAMAMOTO NAOYUKI
IPC: G03F7/20
Filed: 1998-03-25
Granted: 1999-11-01
Abstract: This invention is a kind of exposure method, comprising the placing of sensitization substance in front of moving platform, first to measure many positions on the said movable platform corresponding to degree of inclination of the image of projection optical system. Then to restore the said inclined information. To place the sensitization substance on a predetermined location of the platform. After that, to detect the location the sensitization substance on the position on the optical axis of the projection optical system. Subsequently, in accordance with the position of the optical substance detected and the stored inclined information, to transfer a cover screen image onto the said the optical substance.