baber/WOPTO huggingface dataset:
Patent TW-445505-B (TW)
Title: Semiconductor manufacturing device
Inventor: SAITO KAZUYOSHI
IPC: B65G49/00
Filed: 2000-05-26
Granted: 2001-07-11
Abstract: An epitaxial growth device 1 comprises: a wafer guide member 8 which has a passage 7 communicating with the wafer introduction port 5 of a processing chamber 2, and an opening and closing mechanism 9, which opens and closes the passage. An opening and closing mechanism 9 is equipped with a door part 10 having the door main body 12 and a cylinder 11 for driving this door part 10, and a circular groove 13 is made at the door body 12, and an O ring 14 is stored in this circular groove 13. In addition, a chamfered part 15 is made at the whole of the outside section from the outside fringe 13f, which forms the opening of the circular groove 13 in the open face 12a of the door main body 12. Hereby, when closing the door part 10, the edge of the door main body 12 is entirely prevented from making contact with the wafer guide member 8.
Patent TW-550213-B (TW)
Title: Packaging member and method of binding the packaging member
Inventor: TAMAKI JUN
IPC: B65D85/00
Filed: 2000-06-02
Granted: 2003-09-01
Abstract: This invention prevents light leakage and dust due to deformation of back light units during transportation. In a packaging member 1, planar tray 2 supports a back light unit 3. The tray 2 and the back light unit 3 are packaged using a synthetic resin film 4. Vacant portions 5a-5d are formed between outer edges of the back light unit 3 and outer edges of the tray 2 to permit gripping of the tray 2. Hence, the outer edges of the back light unit 3 do not project beyond the outer sides of the outer edges of the tray 2, and an external force cannot act upon the side of the back light unit 3 on the tray 2. Furthermore, since only the vacant portions 5a-5d of the tray 2 can be gripped by hand, a force cannot be applied to the back light unit 3. Therefore, the packaging member 1 can be moved.
Patent TW-495774-B (TW)
Title: Hybrid laminate and manufacturing method therefor
Inventor: NAKAO SHUYA
IPC: C03C10/00
Filed: 2000-06-09
Granted: 2002-07-21
Abstract: There is disclosed a hybrid laminate comprising: a substrate layer containing a compact of first powders; and a functional material layer being in contact with the substrate layer and containing a compact of second powders; wherein the compact of the first powders comprises a glass material; the compact of the second powders comprises a ceramic material having at least one specific electric property selected from dielectricity, magnetism, resistivity and insulation; at least a part of the first powders is in a sintered state; and the second powders are in an unsintered state and are bonded together by diffusion or a flow of a part of the material of the substrate layer into the functional material layer.
Patent TW-456048-B (TW)
Title: Manufacturing method for polysilicon thin film transistor liquid crystal display panel
Inventor: CHEN CHIH-CHANG
IPC: G02F1/1368
Filed: 2000-06-30
Granted: 2001-09-21
Abstract: The present invention is a manufacturing method for polysilicon thin film transistor liquid crystal display panel which includes the following steps: providing an insulation substrate; forming a conductor layer on the insulation substrate; conducting a first photomask lithography etching process to define a gate conductor structure on the conductor layer; after sequentially forming a gate insulation layer, an amorphous semiconductor channel layer, a catalyst layer and a heavily doped amorphous semiconductor source/drain layer on the insulation substrate having the gate conductor structure, conducting a second photomask lithography etching process; by the good selective etching ratio between the catalyst layer and the amorphous semiconductor channel layer, continuously etching the heavily doped amorphous semiconductor source/drain layer and the catalyst layer and further defining a source/drain initialization structure; conducting a heat treatment on the whole substrate; using the catalysis by the catalyst layer to generate the crystallization for the source/drain initialization structure and the material of the amorphous semiconductor channel layer and further converting to a polysilicon source/drain structure and a polysilicon semiconductor channel layer; after covering a data wiring layer, conducting a third photomask lithography etching process to define a data wiring structure; after forming a passivation, conducting a fourth photomask lithography etching process and further defining the contact structure on the passivation; and, after forming a transparent electrode layer, conducting a fifth photomask lithography etching process to define a transparent pixel electrode area so as to complete the polysilicon thin film transistor display panel.
Patent TW-517379-B (TW)
Title: Semiconductor device and its manufacturing method
Inventor: YAMAMOTO NAOKI
IPC: H01L27/092
Filed: 2000-07-26
Granted: 2003-01-11
Abstract: The present invention is related to a CMOS type semiconductor device, which uses p-type and n-type conductive polysilicon as the gate electrodes, and its manufacturing method. The subject of the invention is to realize a dual gate CMOS semiconductor device with little leakage of boron that makes it possible to separately doping a p-type dopant and an n-type dopant into a polycrystalline silicon layer with one mask. The solving means is to have the gate electrode that uses a high melting point metal/metallic nitride barrier/polycrystalline silicon structure. Boron is doped in the entire polycrystalline silicon layer. Phosphorus or arsenic is doped in an n-channel area. Then, an annealing process is performed in a hydrogen atmosphere with the addition of water such that the boron is segregated on the interface of the metallic nitride film, and the phosphorus is segregated at the interface of the gate oxide film, for forming an n+ gate. Because it is capable of forming n+ region and p+ region respectively in the polysilicon layer by using the mask once, the number of manufacturing processes can be decreased, the product yield is increased and the production cost is reduced. In addition, by performing the thermal processing under the hydrogen gas environment added with water, the dual gat CMOS device having little boron leakage and low resistance gate electrode can be obtained.
Patent TW-476183-B (TW)
Title: Neutral point potential control method of neutral point clamp type inverter
Inventor: YAMANAKA KATSUTOSHI
IPC: H02M7/487
Filed: 2000-08-11
Granted: 2002-02-11
Abstract: The present invention provides a neutral point potential control method of neutral point clamp type inverter irrespective of the power factor by measuring or predicting the phase current in a simple way without reducing the quality of the inter-phase output voltage. Corresponding to anyone of the output states of the connection between the phase output terminal of the three-phase neutral point clamping type inverter, the positive bus voltage point, the neutral point, and the negative bus voltage point, the output state taken by an inverter of three-phase neutral point clamping type is represented by a vector. Depending on which voltage vectors having angles outputted from the inverter, the occurrence time ratio of a specific vector corresponding to the voltage vector is changed to stabilize the neutral point voltage of the three-phase neutral point clamping type inverter. The time to make the positive bus (P), the negative bus (N), and the neutral line (O) connect to respective three-phase output terminals of the three-phase output voltage of six switched states is controlled below a first preset value. The shortage due to the output voltage controlled below a first preset value is compensated by the six switched states except the two switched states where the three-phase output terminals are all connected to the positive bus (P) or the negative bus (N) among the eight switched states where each of the three-phase output terminals is connected to the positive bus (P) or negative bus (N).
Patent TW-497285-B (TW)
Title: Hybrid power system employing fluid regulating elements for controlling various operational parameters of the system
Inventor: HSU MICHAEL S
IPC: H01M12/00
Filed: 2000-11-08
Granted: 2002-08-01
Abstract: A hybrid power system having means for controlling an operational parameter thereof, while concomitantly operating the system efficiently. The system includes an electrochemical converter system, including n fuel cell and a thermal control stack, that is combined with a cogeneration or bottoming device, such as a gas turbine assembly. The hybrid power system employs one or more fluid regulating devices for regulating or controlling one or more fluid flows in the system. The fluid regulating device thus enables the system to control the power output or temperature of the fuel cell and/or the gas turbine assembly, as well as the speed of the turbine.
Patent TW-517261-B (TW)
Title: Gas recovery system and gas recovery method
Inventor: SAKAI ITSUKO
IPC: H01L21/302
Filed: 2000-12-19
Granted: 2003-01-11
Abstract: According to this invention, in a gas recovery system, before gases including PFC are diluted with nitrogen gas, a cooling mechanism trap 101 separates the gases into PFC and the other gases, and the separated PFC is stored temporarily in a temporary storage mechanism 102 until it reaches a concentration at which an efficient recovery of PFC is possible, and thereafter, the temporarily stored PFC is packed in a cylinder.
Patent TW-I223850-B (TW)
Title: Substrate cleaning apparatus and substrate cleaning method
Inventor: AOKI MASAYA
IPC: H01L21/31
Filed: 2001-02-22
Granted: 2004-11-11
Abstract: Scrubber cleaning device comprises of a cup which functions as a dispensation container, a substrate support mechanism provided inside of the cup, and a cleaning device which is able to move in and out of the cup. Substrate support mechanism includes a spin chuck which holds substrate by vacuum adsorption, which is rotatable, ascendable and descendable, and a substrate supporter, which is ascendable and descendable, and supports substrate from the lower part corresponding with the predetermined conditions at the periphery of the spin chuck. Cleaning mechanism comprises of a jet scrubber mechanism and a brush scrubber mechanism. The brush scrubber mechanism performs scrub cleaning by rubbing the surface of the substrates with a roll brush that spins with a cylindrical surface and moves back and forth. The jet scrubber mechanism performs blow cleaning by discharging high pressure cleaning solution from one or a plurality of cleaning nozzles aiming the surface of the substrate from right above.
Patent TW-561238-B (TW)
Title: Vacuum dryer and vacuum drying method
Inventor: MIYAKAWA SHUNJI
IPC: F26B5/04
Filed: 2001-02-23
Granted: 2003-11-11
Abstract: This invention provides a vacuum dryer and a vacuum drying method in which the drying time of a matter to be dried can be shortened and extremely good surface state is ensured for the dried matter. A vacuum pump is coupled with the exhaust opening of a vacuum chamber through a suction pipe and a frequency converter is provided on the input side of an AC motor for driving the vacuum pump thus constituting a vacuum dryer. A substrate applied with coating liquid is placed in the vacuum chamber of the vacuum dryer which is then evacuated up to a vacuum level slightly lower than that where evaporation rate of solvent in the coating liquid increases abruptly. Subsequently, gas in the vacuum chamber is discharged at a low rate and solvent in the coating liquid is evaporated gradually before the atmospheric pressure is recovered in the vacuum chamber.
Patent TW-593185-B (TW)
Title: Toughened glass body
Inventor: WEBER ANDREAS DR
IPC: G11B5/73
Filed: 2001-04-24
Granted: 2004-06-21
Abstract: The present invention relates to a toughened glass body comprising a base body of glass and at least one layer applied thereto. According to the glass body of the present invention, at least one layer is under a defined compressive stress or a defined tensile stress.
Patent TW-469127-B (TW)
Title: Absorbent article
Inventor: KASAI TAKAO
IPC: A61L15/46
Filed: 2001-05-11
Granted: 2001-12-21
Abstract: An absorbent article comprising a liquid retentive absorbent layer containing a superabsorbent polymer and a liquid-impermeable leak proof layer is disclosed. An agent having a skin care effect and substantially no decomposing action on the superabsorbent polymer is fixed on a prescribed region of the absorbent article in a state ready to be released from that region upon contact with moisture.
Patent TW-564250-B (TW)
Title: Process for manufacturing a hydroxyester derivative intermediate and epoxy resins prepared therefrom
Inventor: BORIACK CLINTON J
IPC: C08G59/00
Filed: 2001-05-17
Granted: 2003-12-01
Abstract: A process for manufacturing an alpha-halohydrin intermediate and an epoxy resin prepared therefrom including epoxidizing an alpha-halohydrin intermediate produced from an in situ halide substitution-deesterification of an alpha-hydroxy ester derivative which has been obtained by the coupling reaction of a phenol or a mixture of phenols and a glycidyl ester optionally in the presence of a catalyst.
Patent TW-526636-B (TW)
Title: Engine operated generator
Inventor: SHIMIZU MOTOHIRO
IPC: H02P9/04
Filed: 2001-06-07
Granted: 2003-04-01
Abstract: It is featured that a generator can respond to a variation in the load with a generous margin regardless of the its temperature. The output current of the generator (1) is rectified with a converter (3) consisting mainly of a semiconductor thyristor bridge. A direct current output of the converter (3) is then converted by an inverter (4) into an alternating current at a commercial frequency and then connected to the load (5). The engine speed is controlled so that the on state angle of the thyristors in the converter (3) is maintained to a target angle. Since the target angle is set within a range not higher than a maximum limit, the generator can constantly run with a generous margin and readily respond to a variation in the load. The target angle can be modified depending on the temperature of the generator in order to inhibit the engine from being overloaded and its speed from increasing excessively.
Patent TW-501198-B (TW)
Title: Method and device for processing substrate
Inventor: WADA NORIYO
IPC: H01L21/304
Filed: 2001-06-20
Granted: 2002-09-01
Abstract: The present invention increases the processing accuracy (density) and processing efficiency in a process where a substrate is cleaned by an UV irradiation thereon by making the UV region of the discharge lamp, which is used to irradiate a dielectric barrier layer (barrier wall), into an environment free of oxygen. Referring to Fig. 3, an UV light from the discharge lamp 1 installed on the dielectric barrier layer in the processing chamber 12 is used to form a reducing active species [H.] and oxidizing active species [.OH], and the irradiation of an UV light having a short wave is used to decompose the contaminants formed by the organic materials adhered on the surface of the substrate 10 so that the contaminants, that have been decomposed into low molecules, and the materials formed by the contaminants with water generate reduction reactions and oxidation reactions. A nitrogen nozzle 30 is used to generate a nitrogen flow along the surface of the substrate 10 in a direction opposite to the transport direction. Such a nitrogen flow replaces the air on the processed surface of the substrate 10 and the surrounding area thereof into nitrogen. Next, a moist nitrogen supply nozzle 17 is used to supply a moist nitrogen, which is a mixture of steam and nitrogen, for wetting the surface of the substrate 10 and the surrounding area thereof.
Patent TW-580698-B (TW)
Title: Semiconductor integrated circuit with memory redundancy circuit
Inventor: OSADA KENICHI
IPC: G01R31/28
Filed: 2001-07-26
Granted: 2004-03-21
Abstract: A control signal for a P-channel type MOS transistor that precharges a bit line and a complementary bit line is separated from a control signal for a P-channel type MOS transistor that equalizes the bit line and the complementary bit line. In failure analysis, the bit line and the complementary bit line are respectively supplied with separate voltages, and an offset voltage of a sense amplifier and a read current in a memory cell are measured to thereby perform failure analysis and to start up the manufactured article.
Patent TW-503133-B (TW)
Title: Method and device for controlling hydraulic pinch roll and control unit thereof
Inventor: KUWANO HIROAKI
IPC: B21C47/34
Filed: 2001-08-16
Granted: 2002-09-21
Abstract: This invention provides a method and device for controlling a hydraulic pinch roll which is provided with position detectors 10c, 10d for detecting the position of right and left cylinder pistons 6c, a computing device 13 for computing the difference between the output 16c, 16d of the position detectors 10c, 10d, a controller 14 for processing the difference and making a correction output and adding and subtracting devices 18c, 18d with which the correction output 17 with the controller 14 is added to and subtracted from the set value 20 of pressing force so that the correction output 17 is added in the direction in which the gap of the pinch roll 1 is pushed in on a side where the gap is wider and, on the other side, the gap is decreased by the same amount of the correction output 17. Consequently, the set values for controlling right and left individual pressing forces are corrected by the correction value and by means thereof, defective coiled shape is suppressed.
Patent TW-507283-B (TW)
Title: Method of processing silicon single crystal ingot
Inventor: KIMURA MASANORI
IPC: B28D5/04
Filed: 2001-08-28
Granted: 2002-10-21
Abstract: This invention provides a method of processing a silicon single crystal ingot capable of slicing off wafers from a silicon single crystal ingot, characterized in that the single crystal ingot is cut off in the direction parallel with the axial direction before slicing off the wafers and the wafers having a desired thickness are sliced off from the divided ingots, whereby thin wafers can be sliced off from the large diameter silicon single crystal ingot at a high yield without unnecessarily increasing the thickness of the wafers at the time of slicing.
Patent TW-593250-B (TW)
Title: Method for recovering material values from bisphenol tars
Inventor: SHAFER SHELDON JAY
IPC: C07C39/16
Filed: 2001-08-29
Granted: 2004-06-21
Abstract: Phenol and isopropenylphenol are recovered from BPA tars by sparging the fluidized BPA tar while heating in the presence of a basic catalyst. Sparging dramatically increases the efficiency of phenol and isopropenylphenol recovery. Recovered isopropenylphenol may be converted to bisphenol A in the distillate by reaction with phenol and an acidic catalyst.
Patent TW-575668-B (TW)
Title: Process for manufacturing a composite foil suitable for manufacturing multi-layer printed circuit boards
Inventor: GALES RAYMOND
IPC: B32B15/08
Filed: 2001-09-04
Granted: 2004-02-11
Abstract: A peelable composite foil includes a metallic carrier foil, a first barrier layer on one side of the metallic carrier and a second metallic layer on the first barrier layer. The second metallic layer includes a combination of a metal selected from the group including zinc, molybdenum, antimony and tungsten, and an electrodeposited, ultra-thin metal foil on the second metallic layer.
Patent TW-I238083-B (TW)
Title: Dehumidifying agent of coating film delaminating type
Inventor: TANAKA YUICHI
IPC: B01D71/48
Filed: 2001-09-20
Granted: 2005-08-21
Abstract: A dehumidifying agent of coating film delamination type, characterized in that it comprises a bag formed by using, at least partly, a sheet having a double layer structure, wherein a film unsusceptible to moisture permeation is arranged on the surface side and a moisture-permeable film is arranged on the inner side, and a deliquescent salt filled in the bag, and it is subjected to use through delaminating the film unsusceptible to moisture permeation. The dehumidifying agent can be packaged with simplicity and ease and can be stored for a long period of time, and as a result, can be provided with improved economy.
Patent TW-550492-B (TW)
Title: Method for preparing an estimate of sheet metal work
Inventor: EMORI RYUHARU
IPC: G06Q30/06
Filed: 2001-12-25
Granted: 2003-09-01
Abstract: The present invention discloses a method for preparing an estimate of sheet metal work, wherein when the producer received the price estimation request of products, the producer can proceed the product design and the price estimation at the same time, and calculate the delivery date to notify the ordering party. The ordering party 3 sends the price estimation request on the product manufacturing. The producer 5 will make the 3D outline figure V based on the three views of the product. In order to achieve the correct manufacturing, the 3D outline figure V can be divided into a plurality of components to make the explosion figure for each component to be calculated the fees for the material and the manufacturing; then, deciding the folding process from each explosion figure, and calculating the folding manufacturing time and folding manufacturing fee for the folding process; next, assembling the components as the product, and calculating the welding fee, the painting fee and the assembling fee for the product; and, making the delivery date and the estimation based on these fees and time to the ordering party, so as to reduce the pre-processing time of the product manufacturing.
Patent TW-I225902-B (TW)
Title: Method and apparatus for growing single crystal
Inventor: ABE TAKAO
IPC: C30B15/00
Filed: 2001-12-28
Granted: 2005-01-01
Abstract: The present invention relates to a method and apparatus for growing a single crystal by the Czochralski method, in which a single crystal is grown with forced cooling of neighborhood of a crystal growth interface by disposing a cooling cylinder formed of copper or a metal having a heat conductivity larger than that of copper at least in the vicinity of the crystal growth interface so as to surround the single crystal under pulling and circulating a cooling medium in the cooling cylinder. Thus, there are provided a method and an apparatus for growing a single crystal, which can exert cooling effect on a growing single crystal to the maximum extent so as to realize higher crystal growth rate, even when a silicon single crystal having a diameter of 300 mm or more is grown.
Patent TW-521360-B (TW)
Title: Method for producing flexible wiring board
Inventor: NAITOH KEIICHI
IPC: H05K3/06
Filed: 2002-02-20
Granted: 2003-02-21
Abstract: In the present invention, after first chemical plating layers (18) and first conductive materials (16) are grown sequentially on the surface of a first base film (11) having a reference conductive layer (12) and a first surface conductive layer (13) disposed on the front and rear arranged surfaces thereof and provided with a first via (15) penetrating the first surface conductive layer (13), a first coating conductive layer (91) comprising the first chemical plating layers (18), the first conductive materials (16) and the first surface conductive layer (13) is etched to reduce the film thickness and then it is patterned to form a first wiring layer (20). Since the thin first coating conductive layer (91) is etched and patterned, a desired pattern width can be obtained even when the first coating conductive layer (91) is patterned by isotropic etching, e.g. wet etching.