Patent SG-11201804672Q-A (SG)
Title: Systems and methods for production of low oxygen content silicon
Inventor: SAMANTA GAURAB
IPC: C30B29/06
Filed: 2016-12-01
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -' Organization International Bureau irestYlid (43) International Publication Date ..... ..sr ,„,„.1 8 June 2017 (08.06.2017) W I P0 1 PCT (10) WO International 111111111111311111111111111111111111111111111111111111111111111111111111111111111111111111 2017/096057 Publication Number Al (51) International Patent Classification: (74) Agents: MUNSELL, C30B 15/20 (2006.01) C30B 15/30 (2006.01) dale LLP, 7700 C30B 29/06 (2006.01) souri 63105 (US). (21) International Application Number: (81) Designated States PCT/US2016/064448 kind of national AO, AT, AU, (22) International Filing Date: BZ, CA, CH, 1 December 2016 (01.12.2016) DO, DZ, EC, (25) Filing Language: English HN, HR, HU, KW, KZ, LA, (26) Publication Language: English MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, (30) Priority Data: OM, PA, PE, 62/263,355 4 December 2015 (04.12.2015) US SC, SD, SE, TN, TR, TT, (71) Applicant: SUNEDISON SEMICONDUCTOR LIM- ZW. ITED [SG/SG]; 9 Battery Road #15-01, Straits Trading Building, Singapore 049910 (SG). (84) Designated States kind of regional (72) Inventor; and GM, KE, LR, (71) Applicant (for US only): SAMANTA, Gaurab [US/US]; TZ, UG, ZM, 501 Pearl Drive, St. Peters, Missouri 63376 (US). TJ, TM), European DK, EE, ES, Michael G. et al.; Armstrong Teas- Forsyth Blvd., Suite 1800, St. Louis, Mis- (unless otherwise indicated, for every protection available): AE, AG, AL, AM, AZ, BA, BB, BG, BH, BN, BR, BW, BY, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, LC, LK, LR, LS, LU, LY, MA, MD, ME, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, (unless otherwise indicated, for every protection available): ARIPO (BW, GH, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (AL, AT, BE, BG, CH, CY, CZ, DE, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (72) Inventors: DAGGOLU, Parthiv; 501 Pearl Drive, St. LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Peters, Missouri 63376 (US). BHAGAVAT, Sumeet; 501 SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Pearl Drive, St. Peters, Missouri 63376 (US). BASAK, GW, KM, ML, Soubir; 501 Pearl Drive, St. Peters, Missouri 63376 (US). MR, NE, SN, TD, TG). ZHANG, Nan; 501 Pearl Drive, St. Peters, Missouri Published: 63376 (US). — with international search report (Art 21(3)) (54) Title: SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON 100 KOOLINa - 38, WATER 14 3 1 12t -129 0 01 0 27 UNIT ; 41 POWER 144 13 § Suv PLY 273 31-, 1 25 ii 7 36 1, 27 gg g ICC:IDLING WATER € , 5 0 Ii31 - .4t EAT LING WATER RETURN 105 POWER i r-; E 137 - \ 0 SUPPLY -15.1 i SUPPLY Ih- .;-107 in C 01 FIG. 0 Ir --- (57) : A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon 1-1 C in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in ei at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a Q second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or in- creasing a magnetic field strength relative to the first stage.