baber/WOPTO huggingface dataset:
Patent TW-375782-B (TW)
Title: Method of forming intermediate insulation layer in semiconductor device
Inventor: JANG HYUN-JIN
IPC: H01L21/31
Filed: 1998-06-24
Granted: 1999-12-01
Abstract: Disclosed is a method of forming an intermediate insulation layer with improved insulation and planarization characteristics in a semiconductor device. The method includes the steps of: providing a semiconductor substrate on which a first metal interconnection is formed; forming a first oxide film with high density on the semiconductor substrate; forming a second oxide film on the first oxide film by a plasma enhanced chemical vapor deposition; coating a SOG film on the second oxide film; blanket-etching the SOG film until the SOG film is completely removed; forming a through hole of exposing a selected portion of the first interconnection; and forming a second metal interconnection to electrically connect the resultant substrate which the through hole is formed, to electrically connect the second metal interconnection with the first metal interconnection.
Patent TW-436801-B (TW)
Title: Semiconductor integrated circuit apparatus
Inventor: MAESAKO TAKETO
IPC: G11C11/00
Filed: 1998-09-09
Granted: 2001-05-28
Abstract: This invention is about a semiconductor memory apparatus and includes the followings: the primary memory part, which is composed of plural memory units arranged in plural rows and plural columns; the secondary memory part, which is composed of plural memory units arranged in plural rows and plural columns; one bi-directional data transfer circuit, which is individually connected with the bi-directional data transfer circuits of the primary memory part and the secondary memory part through plural data transfer bus. The data transfer bus line on one memory unit area of the primary memory part is arranged in parallel with plural bit lines in one column direction and is connected to plural bit lines through one column selection circuit. Therefore, the semiconductor integrated circuit apparatus of this invention has one primary memory that is suitable to perform the access from plural data processors.
Patent TW-440839-B (TW)
Title: Semiconductor apparatus
Inventor: OTSUKI KAZUTAKA
IPC: H01L27/105
Filed: 1998-09-30
Granted: 2001-06-16
Abstract: The present invention provides a kind of semiconductor apparatus that is provided with semiconductor memory capable of making the transistor characteristic of memory cell portion and selector portion be homogenized. For the memory cell sections 11 and 13 of memory cell array in a semiconductor memory of this invention, N<SP>+</SP> diffused layer 14 and gate electrode line 15 are located with the same line width and with an equal spacing. In a selector section 12, the N<SP>+</SP> diffused layer 14 and the gate electrode line 15 are not disposed with an equal spacing relationship. However, a dummy N<SP>+</SP> diffused layer 16a is added to an end of the N<SP>+</SP> diffused layer 14 in the selector section 12. In addition, a dummy N<SP>+</SP> diffused layer 16b is additionally disposed in a region which exists as an empty region corresponding to the N<SP>+</SP> diffused layer 14 in the memory cell sections 11 and 13. Thus, a resist pattern for the N<SP>+</SP> diffused layers is formed as a designed pattern, and the characteristics of memory cell transistors or selector transistors are homogenized.
Patent TW-390031-B (TW)
Title: CMOS sensor structure and method for making the same
Inventor: JANG GUANG-YE
IPC: H01L27/14
Filed: 1998-10-14
Granted: 2000-05-11
Abstract: A method for making a CMOS sensor comprises forming an insulating layer on a substrate; forming a gate and a masking layer on the insulating layer; forming a source/drain region in the substrate; and performing an ion implantation process to form a sensor region in the substrate.
Patent TW-436879-B (TW)
Title: Device for discharging a liquid
Inventor: BOOS ROBERT
IPC: F04B43/02
Filed: 1998-12-08
Granted: 2001-05-28
Abstract: The invention relates to a device for discharging a liquid, comprising a container (1) which contains the liquid, and a mobile element (2) for reducing the volume of the container, the mobile element (2) is connected by bellows (5) to an inner wall of the container (1) which contacts with the liquid tightly, so that the liquid can be discharged with a very constant volume per unit of time without the risk of forming particles and contaminating the liquid.
Patent TW-591090-B (TW)
Title: Chemical mechanical polishing slurry for tungsten
Inventor: KRYWANCZYK TIMOTHY C
IPC: C09K3/14
Filed: 1998-12-19
Granted: 2004-06-11
Abstract: A ferric nitrate-alumina based slurry useful for chemical-mechanical-polishing of tungsten metallurgy on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes 375 ml of a 9% wt alumina suspension, about 200 grams ferric nonahydrate, water to dilute to about 4.5 liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.0 to 1.5.
Patent TW-413624-B (TW)
Title: Method of making desktop earthen stove chicken
Inventor: TSAI WU-CHING
IPC: A23L5/10
Filed: 1998-12-22
Granted: 2000-12-01
Abstract: The method of making a desktop earthen stove chicken according to the present invention mainly comprises breaking through a conventional method where the chicken is covered with earth outdoors to cook an earthen stove chicken. The method mainly comprises wrapping the food with an insulation layer into a smoldering pack; placing the smoldering pack in a metal container; loading coarse gravel in a cylinder; installing a fire source below the cylinder; rotating the cylinder with a power device so that the gravel inside the cylinder can be heated uniformly; loading the high temperature gravel in the metal container so that the smoldering pack is fully buried by the gravel; covering the box with a lid to keep the box in a sealed state; digging out a housing hole at a predetermined portion on a desk; installing an auxiliary heater below the housing hole; mounting the metal container in the housing hole; heating the container with the auxiliary heater to accelerate the smoldering of the food inside the container for a specified time. The invented method can cook an earthen stove chicken indoors without the trouble of the generation of smoke.
Patent TW-591007-B (TW)
Title: Inhibitors of alpha4 mediated cell adhesion
Inventor: SIRCAR ILA
IPC: A61K31/223
Filed: 1999-01-19
Granted: 2004-06-11
Abstract: The present invention relates to a pharmaceutical composition comprising as an active ingredient a compound of formula (I), in which Ring A is an aromatic or a heterocyclic ring; Q is a bond, carbonyl, lower alkylene, lower alkenylene, -O- -(lower alkylene)-, etc.; n is 0, 1 or 2; Z is oxygen or sulfur; W is oxygen, sulfur, -CH=CH-, -NH- or -N=CH-; R1, R2 and R3 are the same or different and are hydrogen, halogen, hydroxyl, a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted lower alkoxy group, a substituted or unsubstituted amino group, etc.; R4 is tetrazolyl, carboxyl group, amide or ester; R5 is hydrogen, nitro, amino, hydroxyl, lower alkanoyl, lower alkyl, etc.; R6 is selected from (a) a substituted or unsubstituted phenyl group, (b) a substituted or unsubstituted pyridyl group, (c) a substituted or unsubstituted thienyl group, (d) a substituted or unsubstituted benzofuranyl group, etc.; or a pharmaceutically acceptable salt thereof.
Patent TW-420954-B (TW)
Title: Multiple sensor array image signal compensation and correction method and the device thereof
Inventor: JUANG JIA-MING
IPC: H04N7/18
Filed: 1999-02-05
Granted: 2001-02-01
Abstract: The present invention provides a multiple sensor array image signal compensation and correction method and the device thereof which is characterized that the clock signal or column/row synchronous driving signal generated by the timing generator will be applied with different delays according to the relative space positioning errors of each sensor array device so that when merging the image data captured by each devices, each image data can have suitable time delay to compensate the space error of each sensor array devices so that the image data outputted from each device can be easily overlapped to realize the multiple sensor array.
Patent TW-379197-B (TW)
Title: Radial-arm movable robot
Inventor: CHEN JIUN-DA
IPC: B65G61/00
Filed: 1999-02-23
Granted: 2000-01-11
Abstract: The present invention relates to a radial-arm movable robot, having on both sides of the body of the radial-arm movable robot an articulated lifting arm each and, having on the other side of the articulation of the lifting arm with the body a radial arm each, having each of the radial arms a pair of articulated coasters and at the same time, with inside the lifting arm and the rotary arm mutually adapted gearing, having the coasters dynamic wheels and tracks in connection with this gearing to, by means of the dynamic power link gearing on the body, drive the lifting arm, the rotary arm, the dynamic wheel and the track move and, through the server of the dynamic source, making the body move in different manners, to satisfy the different terrain conditions.
Patent TW-404857-B (TW)
Title: Process for hot-rolling stainless steel and surface treatment compositions used therein
Inventor: SHIBATA HIROMITSU
IPC: B21B3/02
Filed: 1999-03-23
Granted: 2000-09-11
Abstract: A hot-rolling process prevents surface deterioration of the stainless steel sheet which forms during hot rolling of a stainless steel slab after heating in a heating furnace, and does not cause damage to the heating furnace nor a decrease in yield of the steel sheet. The hot-rolling process for a stainless steel slab includes heating a stainless slab containing 10 weight percent or more of chromium in a heating furnace and hot-rolling the slab. A surface treatment, which is used prior to the heating, composition is composed of a mixture containing at least one of a Ca compound and a Ba compound and a binder for binding the mixture to a slab surface and for forming a coating film on a slab surface.
Patent TW-399125-B (TW)
Title: Scroll-type compressor
Inventor: KAWADA MINORU
IPC: F16D7/10
Filed: 1999-04-19
Granted: 2000-07-21
Abstract: A scroll-type compressor is equipped with a revolving axle, an eccentric driven pin, a revolving scroll component, a fixed scroll component, and a power transmitting component. The eccentric driven pin is positioned at the different portion from the center of the revolving axle. The revolving scroll component transmits the driving power via the revolving axle and eccentric driven pin. The fixed scroll component is fixed to a scroll piece, which is coupled with the revolving scroll component. The power transmitting component is not only capable of transmitting the power via the revolving axle and eccentric driven pin, it is also capable of maintaining the revolving axle still turns while the revolving scroll component ceases.
Patent TW-423148-B (TW)
Title: Manufacturing method of dual crown-type rough poly-silicon DRAM capacitor
Inventor: WU SHIE-LIN
IPC: H01L27/108
Filed: 1999-05-13
Granted: 2001-02-21
Abstract: First, form the first dielectric layer upon the substrate and then the second dielectric layer and the first conductive layer. Remove part of the first conductive and the second dielectric layers and define openings in them. Second, form the second conductive layer covering the substrate and sidewall structure upon the side wall of the second conductive layer in the opening. Furthermore, remove the second conductive layer not covered by the sidewall and use the remained second conductive layer as a mask to remove the sidewall and partial first dielectric layer and to define contact holes. Third, form the third conductive layer covering the substrate and then define a pattered layer on the third conductive layer. Remove the third and first conductive layers not covered by the patterned layer. Forth, form a conductive sidewall upon the side walls of the patterned, third conductive and first conductive layers and remove the patterned and second dielectric layers to leave the storage capacitor. Fifth, form the third dielectric layer upon the substrate. Finally form the forth conductive layer on the third dielectric layer to complete the capacitor formation.
Patent TW-432905-B (TW)
Title: Electronic appliance
Inventor: IWASAKI KAZUMI
IPC: A01M29/00
Filed: 1999-05-20
Granted: 2001-05-01
Abstract: Invasion of insects into electronic appliances is prevented, nesting of insects in the electronic appliances is prevented, and these preventing actions are maintained for a long period. Further, troubles of electronic appliances due to invasion of insects are decreased. Insect control measures may be applied in all electronic appliances including small and lightweight types. It includes (a) a housing, and (b) an electronic circuit disposed in the housing. The electronic circuit includes a printed wiring board having an electronic material containing a repellent, and an electronic component mounted on the printed wiring board. The electronic material containing the repellent is paste, solder resist, parts layout, insulating resin, prepreg cured piece, resin film, or polyimide film.
Patent TW-429523-B (TW)
Title: Method of manufacturing semiconductor device
Inventor: PARK SANG-WOOK
IPC: H01L21/28
Filed: 1999-06-04
Granted: 2001-04-11
Abstract: A method of manufacturing semiconductor device which can reduce contact resistance and stabilize contact interface, is disclosed. According to the present invention, firstly, a semiconductor substrate on which a lower conductor pattern is formed is provided. The lower conductor pattern is formed is provided. The lower conductor pattern has a first doped polysilicon layer and a first tungsten silicide layer formed thereon. Next, an intermediate insulating layer is formed on the substrate. The intermediate insulating layer is then etched to expose a portion of the surface of the first tungsten silicide layer of the lower conductor pattern, thereby forming a contact hole. Thereafter the substrate in which the contact hole is formed, is thermally treated by rapid thermal processing under H2 atmosphere. A second doped polysilicon layer and the second tungsten silicide layer are then formed on the surface of the contact hole treated thermally and on the intermediate insulating, sequentially. Thereafter the second tungsten silicide layer and the second doped polysilicon layer are patterned to form an upper conductor pattern being in contact with the lower conductor pattern.
Patent TW-444395-B (TW)
Title: Processing method to planarize the crown capacitor device
Inventor: DU YOU-LUEN
IPC: H01L21/8242
Filed: 1999-07-27
Granted: 2001-07-01
Abstract: A processing method to planarize the crown capacitor device used in a semiconductor substrate having a memory unit and a peripheral circuit region is disclosed. First, form at least a memory unit and a transistor on the substrate of a memory unit region and a peripheral circuit region, wherein the memory unit has a doped region on the substrate. Then, form the first insulating layer covering the memory unit region and the peripheral circuit region. Then, define the first insulating layer, and form a concave groove on the memory unit corresponding to the doped region, and form an inner embedded region on the peripheral circuit region. Shortly afterwards, etch the first insulating layer through the concave groove to form a contact opening, fill a connecting plug into the contact opening, and couples with the doped region electrically. Then, sequentially form the second insulating layer and the third insulating layer on the memory unit and the peripheral circuit region. Then, define the third insulating layer, form an opening in the memory unit region corresponding to the doped region, and form the first conductive layer on the bottom and side of the opening. Afterwards, apply planarization process, remove the third insulating layer of the memory unit region. Then, remove the second insulating layer of memory unit. Finally, form a dielectric layer and the second conductive layer on the first conductive layer.
Patent TW-427025-B (TW)
Title: Heterojunction bipolar transistor having continuous conductive band structure
Inventor: LIOU WEN-CHAU
IPC: H01L29/73
Filed: 1999-08-24
Granted: 2001-03-21
Abstract: A heterojunction bipolar transistor having continuous conductive band structure which employs the AsInGaAl/InP as the heterojunction of emitter-base so as to realize lower collector-emitter offset voltage and higher current gain on the component characteristic. Because the conductive band is continuous, it has no potential spike so that the transistor can not only reduce the offset voltage but also increase the electron injection efficiency; on the other hand, the discontinuity of larger valence band for AsInGaAl/InP with implementing a spacer at the heterojunction of emitter-base and a delta-doping sheet so that it can block most of the minority carriers (electric hole) from entering the emitter from the base so as to reduce the recombination probability of majority carriers (electrons) for increasing the current gain.
Patent TW-444407-B (TW)
Title: High voltage bipolar transistor with raised breakdown voltage by using field plate
Inventor: HUANG JR-FENG
IPC: H01L29/73
Filed: 1999-09-01
Granted: 2001-07-01
Abstract: The present invention provides a bipolar transistor with raised device breakdown voltage by using field plate to disperse the electric field. The bipolar transistor comprises a pinch-off layer located on the semiconductor substrate, and form the semiconductor layer of the second conductive type on the pinch-off layer and the semiconductor substrate. Then form the first conductive type base region in the semiconductor material of second conductive type; form the emitter of the second conductive type in the base region of the first conductive type; form the collector of the second conductive type in the semiconductor material of the second conductive type; furthermore, form the field plate of the first conductive type in the epitaxial layer between the base region of the first conductive type and the collector of the second conductive type, which is adjacent to the base region to disperse uniformly the electric field in the base region of the first conductive type and the collector of the second conductive type.
Patent TW-490488-B (TW)
Title: Primer B1a and method of identifying Agaricus blazei using the same
Inventor: SHIU RUEI-SHIANG
IPC: C12Q1/00
Filed: 1999-12-07
Granted: 2002-06-11
Abstract: The primer Bla (the sequence is 5'-CACATCAAGGACAGCAAAGC-3') is cooperated with the universal primer NS7 to a primer set. By these set we can conduct the PCR to identify Agaricus blazei in unknown samples. According to the existence of PCR product, we can identify Agaricus blazei specifically, and the minimal detected DNA concentration is 10 pg/ml.
Patent TW-463015-B (TW)
Title: Reciprocating piston engine
Inventor: MOCZULSKI LECH
IPC: F02F1/20
Filed: 1999-12-22
Granted: 2001-11-11
Abstract: The invention relates to a reciprocating piston engine with at least one cylinder whose cylinder liner (2) is provided with at least one groove-shaped oil pocket (8) laterally defined by material areas, in the area of the running surface (4) assigned to the piston (6). The said material areas are provided with an enhanced resistance to wear capacity when compared with the base material of the cylinder liner (2) outside thereof. In order to obtain higher operational reliability, the material areas which respectively and laterally define one oil pocket (8) are configured as a filling (11) for a groove whose depth (d) corresponds at least to the maximum wear and tear thickness of the cylinder liner (2).
Patent TW-447039-B (TW)
Title: Method for manufacturing shallow trench isolation structure
Inventor: LUO JI-JIN
IPC: H01L21/31
Filed: 2000-02-25
Granted: 2001-07-21
Abstract: A method for manufacturing a shallow trench isolation structure is disclosed. A trench is formed in a substrate. A material layer with anisotropic thickness is formed on the sidewall and bottom of the trench, and then the trench is filled with a filling layer. By utilizing the property that the thickness of the material layer on the bottom is thicker than that on the sidewall, the aspect ratio of the trench for the filling layer can be reduced, therefore no gaps or holes are formed in the filling layer.
Patent TW-479205-B (TW)
Title: Injection molded plastic positioning system for moving carriage flatbed scanner
Inventor: BATEN PATRICK A
IPC: H04N1/00
Filed: 2000-04-19
Granted: 2002-03-11
Abstract: A system, method and apparatus for translating a carriage 102 from one position to another position utilizing an injection molded plastic translating system 104 are disclosed. In a preferred embodiment, an injection molded plastic translating system is utilized within a flatbed scanner to translate a scanhead carriage along a desired path 202 during the scanning process. The plastic translating system is formed utilizing gas injection molding techniques, resulting in a plastic translating system that does not warp. Further, the plastic translating system is smooth to allow the scanhead carriage to be translated with substantially no vibration. Also, the plastic translating system of a preferred embodiment results in very little wear after many translations of the carriage. Because the plastic translating system of a preferred embodiment may be molded as part of the base of the scanner or as part of a platform that is utilized within the scanner, the total number of parts utilized within the scanner is reduced and the total cost for assembling such scanner is reduced. Moreover, the injection molded plastic translating system disclosed herein may be utilized for many other types of devices that require a component to be translated from one position to another along a desired path.
Patent TW-528760-B (TW)
Title: Peptide repeat immunogens
Inventor: HUANG JAU-LIAN
IPC: C07K14/07
Filed: 2000-04-28
Granted: 2003-04-21
Abstract: The invention relates to a polypeptide including (1) a receptor binding domain of a Pseudomonas exotoxin A, and (2) at least two copies of a peptide sequence.
Patent TW-544640-B (TW)
Title: Method for controlling machine transaction job, and IC card value storage method for machine transaction
Inventor: JAU KE-LI
IPC: G07F19/00
Filed: 2000-06-19
Granted: 2003-08-01
Abstract: The present invention provides a method for controlling machine transaction job, and the IC card value storage method for machine transaction. The IC card is in association with information equipment to contact the registration center for checking the card opening. The IC card is in association with information equipment to contact and communicate with the registration center and machine. The IC card can be directly inserted into the information equipment to execute the starting and controlling of the machine through contacting the registration center to execute the printing configuration, so as to achieve convenient usage and high efficiency.
Patent TW-477026-B (TW)
Title: Trench structure substantially filled with high-conductivity material
Inventor: MO BRIAN S
IPC: H01L29/43
Filed: 2000-09-13
Granted: 2002-02-21
Abstract: A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.