baber/WOPTO huggingface dataset:
Patent TW-364158-B (TW)
Title: Device of treating substrate and method for transporting substrate
Inventor: IWASAKI TATSUYA
IPC: H01L21/304
Filed: 1998-02-06
Granted: 1999-07-11
Abstract: The device of treating substrate according to the present invention can support the substrate in a clean status without forming particles adhering to the bottom of the substrate such that the specified treatment can be operated on the substrate in an ideal condition. Said substrate treating device comprises: a transferring arm for transferring the substrate in the treating device; a supporting element installed on the said transferring arm for supporting substrate; and a dedicated cleaning mechanism provided in the above substrate treating device for cleaning the supporting element when it is contaminated.
Patent TW-366551-B (TW)
Title: Wafer fixing unit for focused ion beam apparatus
Inventor: JEON SANG-YOUNG
IPC: H01L21/302
Filed: 1998-02-10
Granted: 1999-08-11
Abstract: A wafer fixing unit of an FIB (focused ion beam) apparatus, for maintaining the flat zone of a wafer in accurate horizontal alignment, includes a fixed frame in a horizontal plane, having a pair of side plates and a forward plate. A first member is composed of a flat rectangular plate in the horizontal plane having a rectangular depression in a forward section, movably disposed between the prior of side plats and rearward of the forward plate. A second member is defined by a T-shape, arranged substantially parallel and above the horizontal plane wherein a narrow end of the T-shape is connected to the first member and the narrow end fits in the rectangular depression. The second member is movably disposed above the forward plate and has a plurality of projecting parts disposed substantially perpendicular to the horizontal plane for contacting and securing a wafer. A pair of springs connect the first member to the forward plate, to allow movement to the first member to form a rest position and a wafer securing position.
Patent TW-409444-B (TW)
Title: The formation method of thin type plug
Inventor: HUANG CHIUNG-YUAN
IPC: H01R43/00
Filed: 1998-02-20
Granted: 2000-10-21
Abstract: This invention relates to a method for forming a thin type plug, which is practiced by associating the lower mould, the upper mould, the fixed seat with the electric-conductive lines, wherein the lower mould is to settle one mould cavity in the concave region of the center portion, and to settle two penetrating holes at suitable place, and to form one groove on one side; and, the upper mould is set corresponding to the status of capping the lower mould; besides, the fixed seat is to vertically form the passivation wall with suitable height at suitable place; and, to settle two penetrating holes at the side of the passivation wall; settle one electric-conductive sheet at each of the two end portions of the electric-conductive lines, said electric-conductive sheet extends downwardly and vertically to form the slot finger; therefore, the slot finger of the electric-conductive lines extend and penetrate through the penetrating holes of the fixed seat, which makes the electric-conductive sheet of the electric-conductive lines limited by the surrounding passivation wall of the fixed seat and in touch with the corresponding facet; then, settle the fixed seat with the electric-conductive lines on the mould cavity of the lower mould, capping the upper mould to the lower mould and inject a plastic material into the mould to form the thin type plug.
Patent TW-386221-B (TW)
Title: Method of driving surface discharge plasma display panel
Inventor: EO YOON-PHIL
IPC: G09G3/28
Filed: 1998-04-29
Granted: 2000-04-01
Abstract: A driving method of a surface discharge plasma display panel includes a resetting step, an addressing step and a sustained discharging step. In the resetting step, a  first voltage is applied between the scan electrodes and the address electrode to accumulate wall charges in the respective pixel by a facing discharge, and the wall-charges accumulated by the facing charge are removed. In the addressing step, a second voltage is applied between a corresponding scan electrodes and selected address electrodes so that a facing discharge occurs, to form wall-charges in the selected pixels. In the sustained discharging step, a third alternating-current voltage is applied between the scan electrodes and the common electrodes so that a surface discharge occurs in the selected pixels.
Patent TW-414775-B (TW)
Title: Auxiliary driven device for an electromotive bicycle
Inventor: LAI JEN-HUEI
IPC: B62M23/02
Filed: 1998-05-11
Granted: 2000-12-11
Abstract: A auxiliary driven device for an electromotive driven bicycle includes a planet gear assembly, the planet gear assembly includes a planet arm is connected to the planet gear, the planet arm is connected to a petal of a bicycle, too. A sun gear is connected a rotating shaft of a auxiliary motor by transmission in a single direction to get transmission operation of the auxiliary motor in a single direction. The sun gear is connected to a front transmission gear disc of the bicycle, the front transmission gear disc indirect drive a speed changer by chain to make the speed changer drive the rear wheel of the bicycle. Two sensors is installed in the planet arm and the rear wheel of the bicycle to measure a rotational speed of the petal of bicycle and a signal of the rotational speed of the rear wheel of the bicycle, after those signals is calculated the signal is transmitted to a controller, the controller transmit a control signal of a auxiliary force, after the signal is amplified by a power amplifier the signal drive the operation of the auxiliary motor, the controller depends on the rotational speed value of the petal and the rear wheel of the bicycle to make proper auxiliary force to give the rear wheel of the bicycle, this is to be a closed loop transmission control system of a feedback regulation.
Patent TW-408443-B (TW)
Title: The manufacture method of dual damascene
Inventor: LI TZUNG-HAN
IPC: H01L21/285
Filed: 1998-06-08
Granted: 2000-10-11
Abstract: A manufacture method of dual damascene; form a dielectrics on the substrate having a metal layer, and there is an opening with a wide top and a narrow bottom in the dielectrics to expose the metal layer. Next, over-etch the metal layer, and form a trench on the metal layer to expose larger area of the metal layer to provide a contact for the subsequent formed glue layer. Then, form an glue layer on the opening and the surface of the trench; and, if the glue layer is metal, proceed a thermal process toward the substrate, and form the alloy with a lower resistance value on the contact position of the metal layer and the glue layer to enhance the ohmic contact capability and to increase the device reliability. Then, use traditional process to complete the filling in of metal layer and the planarization step.
Patent TW-381320-B (TW)
Title: Method for improving the alignment of semiconductor processes
Inventor: CHEN JIA-JEN
IPC: H01L21/762
Filed: 1998-09-24
Granted: 2000-02-01
Abstract: A kind of method for improving the alignment of semiconductor processes which has the following steps: firstly, providing a semiconductor substrate including a field region and an alignment line in which the alignment line further includes an alignment mark; forming shallow trench isolation structure on the field region and alignment mark; filling an isolation layer in each shallow trench isolation structure; partly or wholly removing the filled isolation object in the shallow trench isolation structure; forming a gate oxide on whole surface of semiconductor substrate; then, forming a polycide layer on the gate oxide; defining the polycide layer to form a polycide line.
Patent TW-482910-B (TW)
Title: Liquid crystal display device
Inventor: FUJIOKA KAZUYOSHI
IPC: G02F1/1362
Filed: 1998-10-06
Granted: 2002-04-11
Abstract: A liquid crystal display device according to the present invention includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; and a sealing member formed of a sealing material for confining the liquid crystal layer between the first substrate and the second substrate, the sealing member defining a sealing portion. The first substrate includes a plurality of gate signal lines, a plurality of source signal lines, a plurality of source signal lines, a plurality of switching devices disposed in the vicinity of intersections of the plurality of gate signal lines and the plurality of source signal lines, a plurality of pixel electrodes respectively connected to the plurality of source signal lines through the plurality of switching devices, and an interlayer insulating layer provided below the plurality of pixel electrodes and covering the plurality of lines, a plurality of switching devices disposed in the vicinity of intersections of the plurality of gate signal lines and the plurality of source signal lines, a plurality of pixel electrodes respectively connected to the plurality of source signal lines through the plurality of switching devices, and an interlayer insulating layer provided below the plurality of pixel electrodes and covering the plurality of switching devices, the plurality of gate signal lines and the plurality of source signal lines. The second substrate includes a counter electrode opposing the plurality of pixel electrodes with the liquid crystal layer interposed therebetween. The first substrate includes a part of the interlayer insulating layer and a plurality of terminals covered by the interlayer insulating layer in the sealing portion. A maximum height of protruding portions of the interlayer insulating layer along a top surface thereof is about 0.5 μm or less.
Patent TW-524690-B (TW)
Title: Use of substituted aminomethyl-chromans for the prevention of neuronal degeneration and for the promotion of neuronal regeneration
Inventor: FAHRIG THOMAS
IPC: A61K31/425
Filed: 1998-11-11
Granted: 2003-03-21
Abstract: The invention relates to the use of substituted aminomethyl-chromans for the treatment of neuronal degeneration and for the promotion of neuronal regeneration in cerebral injuries and chronic disorders of the nervous system.
Patent TW-434679-B (TW)
Title: Process for exactly transferring latent images in photo-resist layer non-uniform in thickness in fabrication of semiconductor integrated circuit device
Inventor: YOSHIDA NAOYUKI
IPC: G03F7/00
Filed: 1998-12-01
Granted: 2001-05-16
Abstract: A semiconductor stacked type dynamic random access memory device has a node contact hole formed in an inter-level insulating layer and a storage electrode held in contact with a source region of an access transistor through the node contact hole, and the node contact hole and the storage electrode are patterned by using a photo-lithography and an etching, wherein a photo-resist mask for the node contact hole is different in thickness from a photo-resist mask for the storage electrode by value equivalent to a half of the period of the periodicity representative of sensitized characteristics of the photo-resist in the presence of an optical standing wave in the photo-resist masks, thereby keeping the nesting tolerance between the two patterns.
Patent TW-401560-B (TW)
Title: Method and apparatus for browser dialog box
Inventor: LIN GUANG-SHIN
IPC: G06F9/44
Filed: 1998-12-15
Granted: 2000-08-11
Abstract: A method and apparatus for generating Dialog Box in internet Browser that generates the dialog box monitoring thread after Browser is activated, but initially makes it in sleep status. When user intends to input data, Dialog Box is popped up by the Dialog Box grouping apparatus and is displayed according to the type of Dialog ox. After data input is completed, the monitoring thread of Dialog Box is awakened up and the Dialog Box is closed. The input data is further processed and finally the display of the resident web page of Dialog box is recovered. The Dialog box basic class disclosed in the present invention could be provided for Java-Applet object to succeed and generate any types of Dialog box and make it available to all browsers that support Java.
Patent TW-518224-B (TW)
Title: Trovafloxacin mesylate tablet
Inventor: JOHNSON ALTON DALE
IPC: A61K9/20
Filed: 1999-01-21
Granted: 2003-01-21
Abstract: Compositions, especially in the form of tablets containing the polymorph II form of trovafloxacin mesylate, a lubricant, and microcrystalline cellulose (MC) as the diluent. Such compositions employing MC as a diluent exhibit good storage stability properties and dissolution.
Patent TW-428046-B (TW)
Title: Compound- layer-free vacuum nitriding process
Inventor: YOU KUEN-BIN
IPC: C23C8/24
Filed: 1999-01-30
Granted: 2001-04-01
Abstract: This invention describes a compound-layer-free vacuum nitriding process which includes following procedures, preparation, pumping down to vacuum, heating up, depassivation and nitriding. The work piece is placed into a nitriding furnace equipped with a closed chamber in the preparation step. After the chamber is pumped to obtain vacuum state, nitrogen is introduced for heating up step. And then nitrous oxide gas is added to remove passivation film on the surface of the work piece due to oxidation in the depassivation step. At last, an atmosphere containing ammonia, nitrous oxide and nitrogen is introduced into the chamber for the nitriding process. The total flow rate for the atmosphere is below 10 LPM/m<SP>2</SP> (liter per minute per square meter). And thus there is no compound layer produced on the work piece. This facilitates the subsequent hard film composite covering process and also increases the nitriding rate, saves energy, and improves practicability.
Patent TW-416191-B (TW)
Title: Dual band mobile phone handset
Inventor: EKLOF ANDERS A
IPC: H04M1/00
Filed: 1999-03-23
Granted: 2000-12-21
Abstract: A radio which can operate in two separate frequency bands, with size, weight, and cost that is comparable with a conventional unit that can operate in only one frequency band. The radio includes two local oscillators which respectively produce signals at substantially the same frequencies for operation in both frequency bands. By appropriately choosing the frequency of the oscillators' signals, the radio can produce an intermediate signal which has the same frequency when the radio is operating in either band.
Patent TW-486776-B (TW)
Title: Formation of laterally diffused metal oxide semiconductor device
Inventor: DUNG MING-TZUNG
IPC: H01L21/76
Filed: 1999-04-26
Granted: 2002-05-11
Abstract: This invention provides a method to manufacture high voltage transistors, which comprises the steps of: providing a semiconductor layer with a conductive band; forming an oxide layer on the semiconductor layer; forming a N-type region along the adjacent oxide layer vertically; forming a gate electrode and at least part of the gate electrode covering the top of channel and N-type region; forming a conductive band of the first source/drain region in the semiconductor layer; forming a conductive band of the second source/drain region in the semiconductor layer and using one of the source/drain regions of the N-type region; lightly doping a first dopant concentration on the lightly doped area of a conductive band adjacent to the N-type region and on top surface of the semiconductor; lightly doping a second dopant concentration which is lower than the first dopant concentration on the lightly doped area of the N-type region adjacent to the oxide layer; and finally lightly doping a third dopant concentration which is lower than the second dopant concentration on the lightly doped area of the N-type region deep into the source/drain area.
Patent TW-413854-B (TW)
Title: Manufacturing method for semiconductor device with effective hydrogen passivation
Inventor: NAKAJIMA TATSUSHI
IPC: H01L21/02
Filed: 1999-06-01
Granted: 2000-12-01
Abstract: The present invention provides a manufacturing method for semiconductor device which includes the following steps: forming the first insulation layer on a semiconductor substrate; forming a gate on the first insulation layer; forming the second insulation layer on the gate that the second insulation layer can effectively block the hydrogen atom to pass; after forming the second insulation layer and under the first temperature, conducting hydrogen passivation process between the semiconductor substrate and the first insulation layer; forming a metal wiring layer on top of the second insulation layer and heating the metal wiring layer under the second temperature in which the second temperature is lower than the first temperature.
Patent TW-462042-B (TW)
Title: Rewritable optical information medium
Inventor: ZHOU GUO-FU
IPC: G11B7/241
Filed: 1999-06-08
Granted: 2001-11-01
Abstract: A description is given of a rewritable optical information medium having an IPIAIM stack (2) comprising a phase-change recording layer (4) sandwiched between two dielectric layers (3, 5), a light-absorbing layer (6) of a material like Si, Ge, Mo, or W, a third dielectric layer (7), and a metal mirror layer (8). The light-absorbing layer (6) reduces the difference in light absorption between the amorphous state and the crystalline state to a minimum, thus reducing the recording mark distortion. The presence of the light-absorbing layer in this position ensured that the optical phase difference between the amorphous and the crystalline state is almost zero, making the medium suitable for land-groove recording.
Patent TW-439393-B (TW)
Title: Organic EL device
Inventor: ARAI MICHIO
IPC: H05B33/22
Filed: 1999-06-25
Granted: 2001-06-07
Abstract: An object of the present invention is to provide an organic EL device capable of utilizing the advantages of both organic and inorganic materials and having a high efficiency, long lifetime, and low cost. The object is attained by fabricating an organic EL device comprising a substrate, a hole injecting electrode and an electron injecting electrode formed on the substrate, and an organic material-containing organic layer between the electrodes, said organic layer includes a light emitting layer containing a conjugated polymer, an inorganic electron injecting and transporting layer is between the light emitting layer and the electron injecting electrode, the inorganic electron injecting and transporting layer comprise at least one oxide selected from lithium oxide, rubidium oxide, potassium oxide, sodium oxide, and cesium oxide as a first component, at least one oxide selected from strontium oxide, magnesium oxide, and calcium oxide as a second component, and silicon oxide and/or germanium oxide as a third component. The device may further have an inorganic hole injecting layer between said light emitting layer and the hole injecting electrode, the inorganic hole injecting layer comprises silicon oxide and/or germanium oxide as the main component with the average composition represented by the formula: (Si1-xGex)Oy wherein 0 ≤ x ≤ 1 and 1.7 ≤ y ≤ 1.99, as analyzed by Rutherford back-scattering.
Patent TW-541306-B (TW)
Title: Process for the preparation of tocopherol concentrates
Inventor: LI MIN-SHIUNG
IPC: C07D311/72
Filed: 1999-07-28
Granted: 2003-07-11
Abstract: This invention relates to a process for the preparation of tocopherol concentrates from a material containing tocopherols and free fatty acids. The free fatty acids in the tocopherol-containing material are converted to the alkali metal salts thereof in a specific organic solvent that can not, practically, dissolve the alkali metal salts of fatty acids. The free fatty acids are removed as a precipitate of their alkali salts, and the tocopherols are recovered from the supernatant by removing the solvent. The said specific organic solvents include acetone, ethyl acetate, dimethylformamide, acetonitrile and their mixtures. The alkali salts are preferably sodium and potassium salts.
Patent TW-456021-B (TW)
Title: Output/input protection device
Inventor: HORIGUCHI YOKO
IPC: H01L27/02
Filed: 1999-09-23
Granted: 2001-09-21
Abstract: The present invention is an output/input protection device that it can resist up to 200V of voltage according to the simulation test in EOS/ESD test standard. The present invention comprises a protection device for preventing the electric discharge sensed between the second type of diffusion layers configured in parallel in the first type of semiconductor substrate caused by the external noise to effect the performance of the internal circuit; in which a plurality of contacts electrically connected to the metal wiring layer through the diffusion layers are configured; a contact point, located at the end of the protection device on the input block edge; providing at least a device for increasing the resistance of the contacts at the end to make them larger than the resistance of the other contacts.
Patent TW-504689-B (TW)
Title: Optical data storage wafer and its manufacturing method
Inventor: WEINZERL HELFRIED
IPC: G11B7/258
Filed: 1999-09-29
Granted: 2002-10-01
Abstract: This invention relates to an optical data storage wafer. Wherein, to develop in the direction from the surface of the wafer to the range of the optical thickness. It is provided with at least two interface surfaces, and each uniquely corresponds to the information it stores. And wherein the unique interface of the reflection layer which is located deeply inside, and it contains at least another unique interface surface of a partial reflective/partial transmittive layer, and each for light provided wavelength and under the same incident angle < 90 DEG. Wherein, besides, the remaining wafer material between the surface and the reflection layer essentially transmits the light mentioned. And besides, the reflection layer is made of a first metal alloy, and the partial reflection layer is made of a second metal alloy, and which is characterized by the fact that: the alloys of the at least two layers contain one or more the same metals, wherein the one or more metals constitute more than 50% of the ingredient of each alloy, if the alloys contain gold, it can only reach the highest of 50% of the ingredient of each alloy.
Patent TW-461136-B (TW)
Title: A method and apparatus for cutting a fluorinated polymer membrane and simultaneously joining it to a polymer frame
Inventor: CLARK DUNCAN GUY
IPC: B29C65/00
Filed: 1999-10-14
Granted: 2001-10-21
Abstract: Method and apparatus for cutting a fluorinated polymer membrane and simultaneously joining it to a polymer frame. The method comprising the steps of; (i) contacting a fluorinated polymer membrane with a polymer frame at the point where a cut and join is desired, and (ii) directing at least one laser beam onto the point of contact between the membrane and the frame so as to cut the membrane and effect a join to the frame.
Patent TW-424263-B (TW)
Title: The polarizing mask for printing the narrow-pitch holes
Inventor: LIN SZ-MIN
IPC: G03F1/08
Filed: 1999-11-26
Granted: 2001-03-01
Abstract: The present invention discloses a kind of polarizing mask for printing the narrow-pitch holes in the optical photolithography process. The polarizing mask includes a transparent substrate, a plurality of first polarizing regions and a plurality of second polarizing regions. The above mentioned first polarizing regions are equally spaced and formed on a transparent substrate. Furthermore, the plurality of first polarizing regions are used to specify the first polarizing direction of the light source. The above mentioned second polarizing regions are formed on top of the first polarizing regions, and one portion of each polarizing region is overlapped with the first polarizing regions. Additionally, the second polarizing regions are allocated in the interval of the first polarizing regions. Furthermore, the plurality of the second polarizing regions are used to specify the direction of the second polarizing regions of the light source, and the angle between the first polarizing regions and the second polarizing regions is used in design to control the amount of light passing through the mask.