baber/WOPTO huggingface dataset:
Patent TW-366523-B (TW)
Title: Method of improving resolutions of semiconductor components with double-layer exposure
Inventor: LIN CHIN-HSIANG
IPC: H01L21/027
Filed: 1998-03-16
Granted: 1999-08-11
Abstract: Forming a second photoresist layer on the first photoresist layer for the first exposure onto the second photoresist layer before removing the exposed portion for forming a pattern with an opening on the second photoresist layer. Then, performing the second exposure onto the first photoresist layer, for generating a distribution of a series of light intensities of reciprocating changes of bright bands and dark bands before eventually removing the second photoresist layer and the first photoresist layer corresponding to the bright band.
Patent TW-406358-B (TW)
Title: Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD processing
Inventor: ORCZYK MACIEK
IPC: C23C16/40
Filed: 1998-06-05
Granted: 2000-09-21
Abstract: A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 mu m with an aspect ratio of up to 4.5:1.
Patent TW-386254-B (TW)
Title: Method for improving contact resistance
Inventor: JANG YUNG-RUNG
IPC: H01L21/265
Filed: 1998-06-19
Granted: 2000-04-01
Abstract: A method for improving contact resistance. A substrate having transistors thereon is provided; then a load line is formed and patterned over the substrate, which is served resistor and interconnection respectively; photoresist is formed on the load line for defining interconnection region; first ion implantation is performed for driving ions into the interconnection region; then a second ion implantation is performed for driving ions into a junction between the interconnection region and the substrate, and a junction between the interconnection region and a gate electrode.
Patent TW-426841-B (TW)
Title: Active matrix display
Inventor: YUDASAKA ICHIO
IPC: H01L51/50
Filed: 1998-08-25
Granted: 2001-03-21
Abstract: In an active matrix display device 1 in accordance with the present invention, each pixel 7 is provided with a pixel electrode 41, an organic semiconductor film 43 deposited on the upper layer side of the pixel electrode 41, and a thin film luminescent element 40 provided with an opposed electrode op formed on the upper layer side of the organic semiconductor film 43. A protective film 60 covering almost the entire surface of a substrate is formed on the upper layer of the opposed electrode op. The protective film 60 prevents the entry of moisture or oxygen to inhibit the deterioration of the thin film luminescent element 40.
Patent TW-480756-B (TW)
Title: Lithium secondary battery, its electrolyte, and electric apparatus using the same
Inventor: ARAI JUICHI
IPC: H01M10/0569
Filed: 1999-02-23
Granted: 2002-03-21
Abstract: The purpose of the present invention is to provide a lithium secondary battery capable of safely stopping the functions of the battery without being followed by a sudden change in appearance, generation of gas, or a change in pressure, in the event of over-charge, over-discharge, or an abnormal temperature rise, and provide an electrolyte therefor and an electric apparatus using the battery as a power supply. The lithium secondary battery has a negative electrode capable of storing/discharging lithium, a positive electrode capable of storing/discharging lithium, and a nonaqueous electrolyte, which is characterized in that the nonaqueous electrolyte is solidified by a thermal reaction at a fixed temperature.
Patent TW-407350-B (TW)
Title: The substrate through hole process of the integrated circuit
Inventor: CHEN JIAN-MIN
IPC: H01L23/00
Filed: 1999-06-09
Granted: 2000-10-01
Abstract: This invention relates to a kind of substrate through hole process of the integrated circuit. The steps comprises: providing a copper foil substrate, form a plurality of through holes that penetrate said copper foil substrate on the surface of said substrate by using drill method; than, coating a layer of blanket copper on the sidewall surface of the above-mentioned through hole. Next, fill the epoxy resin in the through holes of the substrate and proceed circuit etching toward the blanket copper on the two sidewall surface of said substrate. Finally, cover the green paint on the surface of the circuit to form the substrate of the integrated circuit of this invention.
Patent TW-431930-B (TW)
Title: Gas shielded arc-welding flux cored wire
Inventor: KAMADA MASAO
IPC: B23K35/368
Filed: 1999-07-30
Granted: 2001-05-01
Abstract: The present invention provides a gas shielded arc welding flux cored wire which is good in the resistance to primer, the shape and the appearance of the bead, and the slag peeling properties, even when used for high-speed horizontal fillet welding on the high electric current welding condition, and provides a gas shielded arc welding flux cored wire which is good in various welding usability including the resistance to metal running for the vertical position welding, when used on a wide welding condition including the high welding current region. A gas shielded arc-welding flux cored wire having a steel-made sheath filled with flux. The flux cored wire containing, by weight % for the total weight of the wire, 1.0% or more Si-Mn ferroalloy powder having a grain size of 212 mu m or less; 2.0 to 7.0% TiO2; 0.2 to 1.5% SiO2; 0.1 to 1.2% ZrO2; and 0.01 to 0.3% fluoride (F-converted value). The powder comprises, by weight %, 0.40 to 1.20% C, 5 to 12% Si, 19 to 42% Mn, and the balance of Fe, with Si ≧ 11.89-2.92C-0.77 Mn (Equation (1)) satisfied.
Patent TW-429392-B (TW)
Title: Electric lamp and illumination device with such an electric lamp
Inventor: HELBIG PETER
IPC: F21W107/00
Filed: 1999-08-24
Granted: 2001-04-11
Abstract: The present invention relates to an electric lamp with the designed metal-plastic base, which is used for vehicle head light. To avoid through the formation of sharp edge on the reflector (20) that will result in the unmatchness of the reflector's (20) mounting hole (21) (which is formed as the lamp holder) with the lamp during the installation, the lamp base is equipped with identations (14f) or recess, such that an inadverdant sharp edge (22a2) on the edge (22a) of the mounting hole (21) is arranged to the lamp base (14b, 15) without contact.
Patent TW-451531-B (TW)
Title: CRT Socket
Inventor: ARAI ATSUSHI
IPC: H01R33/74
Filed: 1999-09-07
Granted: 2001-08-21
Abstract: The object of the present invention is to provide a structure allowing elongation of the creeping distance of a high voltage contact of a CRT socket connecting a CRT and a structure allowing lowering a signal contact. The present invention provides a CRT socket comprising: a socket body having a cylindrical center hole penetrating inside and outside, and signal connection means arranged in outer concentric circle same with the hole, allowing engaging with a terminal for the signal of a CRT, an insulating cover comprising high voltage connection means, arranged in concentric circle similar to the signal connection means, allowing engaging with a terminal for focusing the CRT. The signal connection means comprises a signal contact recessed part having a depression surface where a top face engaging with the CRT is recessed and a plurality of signal contact holes arranged on the pressed surface with predetermined space. The high voltage connection means comprises: a high voltage contact depression part having a recessed surface where a top face engaging with the CRT is recessed and a high voltage contact hole arranged on the recessed surface. The signal contact depression part and the high voltage contact depression part are separated by a trench portion penetrating inside and outside.
Patent TW-452783-B (TW)
Title: Disk
Inventor: TAGUCHI HIROFUMI
IPC: G06F21/80
Filed: 1999-10-08
Granted: 2001-09-01
Abstract: The present invention relates to a recording disc on which information can be renewed by external signals, such as electromagnetic waves, and its purpose is to reduce the unnecessary vibration due to an eccentricity in center of gravity of the disc when the disc is rotated at high rotation velocity, wherein there are positioned an antenna portion which enables to receive information and/or electric power on the disc, and a memory chip for transmitting the information received to the disc and for renewing that information. Furthermore, for reducing the eccentricity in center of gravity of the disc, a counter balance and/or a label portion and/or the antenna portion and/or other memory chips and/or a battery are positioned so that they are in balance to the memory chips on the disc.
Patent TW-528999-B (TW)
Title: Display apparatus
Inventor: SEINO KENICHI
IPC: G09G3/36
Filed: 1999-11-03
Granted: 2003-04-21
Abstract: The subject of the present invention is to provide a kind of display apparatus, which has enlarged or reduced display functions and can be applied to a picture display apparatus that has the auxiliary capacitor of Cs ON GATE structure without any obstruction. The invented driving circuit is provided with the followings: a field discriminating circuit 2; a copy/thinning discriminating circuit 3; a pulse generating circuit 4 for generating the copy clock pulse signals in a horizontal period in addition to original clock pulse signals during the operation of displaying an enlarged picture; a gate-clock generating circuit 5 for generating gate-clock signals, which are obtained by superposing all of the original clock pulse signals on the copy clock pulse signals whose number is equal to a difference achieved by subtracting the vertical-pixel number of a video signal from the vertical-pixel number of a display portion; and a gate driver 6 for generating a plurality of high-level gate driving signals for each pulse of the gate clock signals with timings different from each other.
Patent TW-440934-B (TW)
Title: Method for making high pressure metal oxide semiconductor transistor
Inventor: TSAI MENG-JIN
IPC: H01L21/28
Filed: 1999-11-05
Granted: 2001-06-16
Abstract: The present invention discloses a method for making a high pressure metal oxide semiconductor transistor that can save the photoresist process. According to the present invention, a lower product cost and a better device quality can be achieved. The method comprises using a silicon-containing substrate; forming a gate oxide layer on the silicon substrate; depositing a polysilicon layer on the gate oxide layer; forming a photoresist layer on the polysilicon layer and the gate oxide layer; etching the polysilicon layer and the gate oxide layer to define a gate position of a high pressure metal oxide semiconductor transistor; removing the photoresist layer; using a high density plasma chemical vapor phase deposition to deposit and etch to form a triangular dielectric layer on the silicon substrate; implanting a first ion into the silicon substrate to form a graded dopant region inside the silicon substrate; implanting a denser second ion in the graded dopant region to form a source/drain.
Patent TW-429405-B (TW)
Title: Method for fabricating capacitor
Inventor: JANG GUAN-LUEN
IPC: H01L21/00
Filed: 1999-11-30
Granted: 2001-04-11
Abstract: This invention is about a kind of method for fabricating capacitor and includes the following procedures. At first, a first conduction layer is formed on substrate, in which the first conduction layer is formed by metal. An insulation layer is formed on top of the first conduction layer. The thickness of insulation layer is smaller than one tenth of the thickness of the first conduction layer and the insulation layer is composed of dielectric material. A second conduction layer is then formed on the insulation layer, in which the second conduction layer is formed by metal. Pattern is then defined on the second conduction layer. The subsequent procedure is to form photoresist pattern to cover the patterned second conduction layer, and part of substrate surface that is adjacent to the patterned second conduction layer. The area of the photoresist pattern is larger than the patterned area of the second conduction layer. Finally, the insulation layer and the first conduction layer are etched.
Patent TW-I233944-B (TW)
Title: Chlorophyll-rich and salt-tolerant chlorella
Inventor: NAKANISHI KOICHI
IPC: C12N1/12
Filed: 1999-12-17
Granted: 2005-06-11
Abstract: The present invention provides chlorophyll-rich and salt-tolerant chlorella which contains a large amount of chlorophyll, and which makes it possible to supply cultured fishes with little contamination with environmental contaminants such as dioxin or the like having been concentrated through the food-chain from seawater when used as feeds for rotifers for pisciculture, and which can survive a long time in seawater and, consequently, which is suitable for feeds for sea surface pisciculture, fishery feeds and the like. Chlorophyll-rich and salt-tolerant Genus Chlorella mutant strain which can grow in a medium containing 1% by weight or more of sodium chloride and contains chlorophyll at a concentration of 4% or more in total on the basis of dry matter can be constructed by conducting a mutation treatment with UV-irradiation and a mutation treatment with a mutagen such as methanesulfonic acid ester, acriflavine or the like.
Patent TW-484290-B (TW)
Title: Flow control method and architecture of communication device
Inventor: WANG CHING-SHIUNG
IPC: H04L5/18
Filed: 2000-01-24
Granted: 2002-04-21
Abstract: The flow control method and architecture of communication device in accordance with the present invention classify the flow control into three modes, and achieve setting in the auto negotiation of the initial stage of the communication device. The method includes accessing the sixth to ninth bits (D5, D6, D7, D8) of the FLP signal in the auto negotiation stage to determine whether the remote apparatus has half duplex or full duplex capability. If it has half duplex, the flow control is set to a back pressure method. If it is full duplex, the eleventh bit (D10) of the FLP is further accessed to determine whether it has the IEEE 802.3x flow control capability, and if yes, the flow control is set to the standard; otherwise the communication capability is set to half duplex and negotiation is restarted. The final negotiation result sets the flow control in the back pressure operating state.
Patent TW-586262-B (TW)
Title: Systems and methods for utilizing excess electric power from a marine transportation vessel
Inventor: WOODALL ROBERT M
IPC: H02J3/38
Filed: 2000-01-31
Granted: 2004-05-01
Abstract: Systems and methods are provided for delivering excess electric power to an electric power grid from a marine transportation vessel while said marine transportation vessel is at port. A system comprising (a) electrical distribution switchgear on board a marine transportation vessel and connected to at least one generator on board said marine transportation vessel; (b) at least one ship-side power cable connected to said electrical distribution switchgear; and (c) equipment connected to at least one electric power grid and adapted for delivering power into said at least one electric power grid, wherein a shore-side power cable is connected to said equipment and to said ship-side power cable, thus, completing a circuit from said at least one generator to said at least one electric power grid to facilitate delivery of excess electric power from said at least one generator to said at least one electric power grid while said marine transportation vessel is at port.
Patent TW-434798-B (TW)
Title: Method to prevent the over-etch of trench isolation oxide layer
Inventor: CHEN JUNG-YI
IPC: H01L21/76
Filed: 2000-03-07
Granted: 2001-05-16
Abstract: A method to prevent the over-etch of trench isolation oxide layer is hereby disclosed to avoid the surface defect in the cleaning procedure. The method proposed by the present invention comprises covering at least a dielectric liner uniformly in the defined trench region before forming the trench isolation oxide layer; then, depositing another silicon nitride liner to cover this oxide layer uniformly; then, forming a passivation layer (oxide or photoresist layer) on top of it, which only exists in the trench region after the planarization and etch back procedure; then, removing the silicon nitride uncovered by the passivation layer; and finally, removing the passivation layer uncovered by the passivation layer. Since the oxide layer is protected by the silicon nitride liner, which functions as a protection film, the damage of the oxide layer by the cleaning procedure can be avoided. Therefore, when the subsequent word line is formed, there won't be serious edge defect of the oxide layer to generate the phenomena of device drift. The improvement of surface defect of the oxide layer also reduces the poly remained.
Patent TW-436305-B (TW)
Title: Flexibly coordinated stationary exercise device
Inventor: BIRRELL JAMES S
IPC: A63B23/04
Filed: 2000-03-17
Granted: 2001-05-28
Abstract: The flexibly coordinated stationary exercise device (10) includes a frame (12) which has a forward upright member (20). The axle mounts (30) and (32) are attached to the rear region of the frame (12) and support a transverse axle (36) which is preferably operatively connected to a flywheel (38). The ends of the transverse axle (36) rotatably engage left and right crank arm assemblies (50) and (52) that are coupled to the left and right foot links (60) and (70) so that the foot links travel in an arcuate reciprocal path as the transverse axle rotates. The foot links are operatively connected to swing arm mechanisms (80) and (90), which in turn are rotatably connected to the forward upright member (20) at pivot points (84) and (94). The swing arm mechanisms further contain hand-gripping portions (82) and (92), and the foot links further contain foot support portions (66) and (76). Flexibly coordinating members (100) are incorporated in the linkage between each respective hand-gripping portion and foot support portion to substantially and resiliently link the movement of the foot support portions to the movement of the hand-gripping portions, while permitting some degree of uncoordinated motion between the foot support portions and the hand-gripping portions.
Patent TW-567069-B (TW)
Title: Anticonvulsant derivatives useful in lowering blood pressure
Inventor: COTTRELL SANDRA C
IPC: A61K31/35
Filed: 2000-07-05
Granted: 2003-12-21
Abstract: Anticonvulsant derivatives useful in lowering blood pressure in overweight individuals. A pharmaceutical composition for lowering blood pressure in mammals, comprising a therapeutically effective amount of a compound of the formula I as an active ingredient. wherein X is oxygen; R1 is hydrogen; and R3 and/or R4 and R5 together may be a methylenedioxy group of the following formula (II): wherein R6 and R7 are C1-C4-alkyl.
Patent TW-480721-B (TW)
Title: Nonvolatile semiconductor memory device
Inventor: IGARASHI MICHIHITO
IPC: H01L29/788
Filed: 2000-05-19
Granted: 2002-03-21
Abstract: The purpose of the present invention is to provide a kind of nonvolatile semiconductor memory device capable of using low voltage to write in, erase, and read out data at high speed. In addition, the invented nonvolatile semiconductor memory device is divided into a first region I, and a second region II. An n+ layer 9 expanding from the source region 3 to the region under the floating gate 6 is formed on the first region I. A p+ layer 10 is formed on the channel region 4. This p+ layer 10 is used to prevent the generation of short channel effect when reading data. Additionally, the better result is obtained when the capacitance coupling ratio C1/C2 between the control gate 8 and the floating gate 6 is set at a value larger than 0.8.
Patent TW-483000-B (TW)
Title: Information recording apparatus, information recording method, information recording medium, information reproducing apparatus and information recording
Inventor: KOBAYASHI SEIJI
IPC: G11B7/013
Filed: 2000-07-13
Granted: 2002-04-11
Abstract: The present invention relates to an information recording apparatus, an information recording method, an information recording medium, an information reproducing apparatus and an information reproducing method by which in the case in which the present invention is applied to an optical disk system by, for example, a compact disk or the like and data or the like related to copyright is recorded by partial change of a pit shape or the like, the data can be reproduced with certainty without repeatedly recording the data. According to the present invention, with regard to a defect having a size by which at least main data can be reproduced correctly, 1 bit of sub-data SB is allocated to a pit row or the like having a predetermined length or more such that the sub-data SB can be reproduced correctly.
Patent TW-552398-B (TW)
Title: Rule assembly with increased blade standout
Inventor: MURRAY JOHN C
IPC: G01B3/10
Filed: 2000-10-03
Granted: 2003-09-11
Abstract: A retractable rule assembly includes a housing assembly and a reel rotatably mounted in the housing assembly. An elongated blade formed of a ribbon of metal having one end connected to the reel is constructed and arranged with respect to the housing assembly to extend from a position tangential to the reel outwardly through a spaced opening in the housing assembly. A coil spring formed of a ribbon of metal has a construction and arrangement between the housing assembly and the reel to rotate the reel in the housing assembly in a direction to wind up the elongated blade when extending outwardly of the housing assembly opening in a normal concavo-convex cross-sectional configuration onto the reel in an abutting volute coil formation in a flattened cross-sectional configuration. A blade holding assembly is constructed and arranged to be manually actuated to hold the blade in any position of extension outwardly of the housing assembly opening and to release the blade from any position in which it is held. The blade has a blade width, thickness and height of concavo-convex curvature sufficient to enable the blade to stand out arcuately a length measured along the blade of at least 10.5 feet with a horizontal linear length of standout thereof being greater than 97% of the arcuate length of standout.
Patent TW-473784-B (TW)
Title: Method and apparatus to reduce contaminants from semiconductor wafers
Inventor: OUYE ALAN HIROSHI
IPC: H01L21/304
Filed: 2000-08-08
Granted: 2002-01-21
Abstract: A line for processing semiconductor wafers into integrated circuits (ICs) is provided with an input-output (I-O) chamber to help purge residual contamination from the wafers before they are transferred into a processing line. After a cassette containing semiconductor wafers is placed in the chamber, it is sealed from the line and from the atmosphere. Then a dry inert gas such as nitrogen is dispersed into the top of the chamber to form a covering blanket around the wafers to displace and sweep away contaminants such as air-borne particles, moisture and organic vapors. While the purge gas is flowing, gasses and residual contamination are exhausted from the bottom of the chamber at a relatively slow rate until an intermediate pressure level is reached at which pressure droplets of liquid from residual moisture and vapor can no longer condense. Then the flow of purge gas is stopped and the pressure within the chamber is relatively quickly reduced to a base operating value (e.g., a fraction of a Torr), after which the wafers can be transferred to the line for processing into ICs.