baber/WOPTO huggingface dataset:
Patent TW-558566-B (TW)
Title: Method for producing granular metallic iron
Inventor: KIKUCHI SHOICHI
IPC: C21B13/10
Filed: 2001-06-27
Granted: 2003-10-21
Abstract: The subject of the present invention is to provide a method for producing granular metallic iron particularly having a high Fe purity and large grain sizes and excellent in transport and handling at a high yield with high productivity at the time of reducing and melting a raw material containing iron oxide such as iron ore and a carbonaceous reducing agent such as coke and producing granular metallic iron. In the method for producing granular metallic iron by heating a raw material containing a carbonaceous reducing agent and an iron oxide-containing material in a reduction melting furnace, subjecting iron oxide in the raw material to solid reduction, further heating and melting the formed metallic iron and moreover flocculating the same while being separated from slag components, as the carbonaceous reducing agent, the one in which the content of solid carbon is greater than 73%, and also, the quantity of volatile matters in the raw material is less than 3.9% is used, and the amount of the carbonaceous reducing agent to be blended is suppressed to less than 45% to the oxide metal components included in the iron oxide-containing material in the raw material.
Patent TW-561373-B (TW)
Title: System and method of exporting or importing object data in a manufacturing execution system
Inventor: YUAN HUEY-SHIN
Filed: 2001-07-19
Granted: 2003-11-11
Abstract: XML is used to express model object data for an MES application model object. The data for the model object is held in a database. To export information, the database definition is used to construct XML tag information and the database values are used to construct XML element contents. To import information, the XML tag information is used to construct database references, and the XML element contents are used to load the database. To export information database address information names are used to form XML tag labels, and the model object data in the database is used to form XML element contents. New classes are created that are derive from the model object class. The new classes inherit the functionality of the model object classes but they also include new import and export methods that effectively wrap, or layer, the import or export logic around the model objects. DTDs may be used to validate XML documents that are exported or imported from such a system. Code generation facilitates the creation of the new class definitions and the DTD. The code generation considers the database metadata in generating the code.
Patent TW-530235-B (TW)
Title: Valuation prediction models in situations with missing inputs
Inventor: KEYES TIM KERRY
IPC: G06Q40/00
Filed: 2001-08-21
Granted: 2003-05-01
Abstract: A method (240) of valuation of large groups of assets by partial full underwriting (14), partial sample underwriting (34) and inferred values (40) of the remainder using an iterative and adaptive supervised (206) and unsupervised (208) statistical evaluation of all assets and statistical inferences drawn from the evaluation and applied to generate the inferred values. Individual asset values are developed and listed in tables so that individual asset values can be rapidly taken from the tables and quickly grouped in any desired or prescribed manner for bidding purposes. The assets are collected into a database (76), divided into categories (48, 50) by credit variable, subdivided by ratings as to those variables and then rated individually. The assets are then regrouped according to a bidding grouping and a collective valuations established by cumulating the individual valuations.
Patent TW-522400-B (TW)
Title: Non-volatile semiconductor memory device
Inventor: SAEKI TAKAHIRO
IPC: G11C16/34
Filed: 2001-08-21
Granted: 2003-03-01
Abstract: A non-volatile semiconductor memory device for allowing a data writing operation to, a data reading operation from, and a data erasing operation from a plurality of non-volatile memory cells. The non-volatile semiconductor memory device includes a data comparison section for outputting a first comparison result obtained by comparing data read from each of the plurality of memory cells and data read using a reference element for reading, a second comparison result obtained by comparing data read from each of the plurality of memory cells and data read from a reference element for writing, and a third comparison result obtained by comparing data read from each of the plurality of memory cells and data read from a reference element for erasing; and a data storage defect detection section for detecting a data storage defect of a memory cell among the plurality of memory cell, based on the first, second and third comparison results obtained from the data comparison section.
Patent TW-503502-B (TW)
Title: Method for examining whether the ion beam is orthogonal to the wafer surface
Inventor: WU JUAN-SENG
IPC: H01L21/66
Filed: 2001-08-31
Granted: 2002-09-21
Abstract: This invention is related to a method for examining whether the ion beam is orthogonal to the wafer surface. A color-displaying layer and a etchable layer is formed sequentially on a wafer, and then a plurality of opening for exposing the color-displaying layer is formed in the etchable layer. After implanting to the color-displaying layer, the implanted areas will express a different color to the non-implanted areas. By said method, it is efficiently for verifying implanted and non-implanted regions on a wafer, and thus arriving the object for examining whether the ion beam is orthogonal to the wafer surface.
Patent TW-508695-B (TW)
Title: Dry etching method for semiconductor device manufacture process
Inventor: LI JIUN-HUNG
IPC: H01L21/3065
Filed: 2001-09-13
Granted: 2002-11-01
Abstract: This invention provides an etching method, which can increase etch selectivity of a dielectric material to silicon in a polysilicon etcher. The inventive etching method is a dry etching method, which adjusts a gas recipe of the polysilicon etcher to acquire reactive gases of carbon tetrafluoride (CF4)/fluorinated methane (CHxFy; x=2, y=2 or x=1, y=3) in the etching reaction chamber. Therefore, the polysilicon etcher etches the dielectric material layer and the polysilicon layer, and the etching selectivity of the dielectric material to silicon can be increased greatly. Furthermore, a straight etching profile can be achieved and also there is a stable reaction chamber environment.
Patent TW-522712-B (TW)
Title: Query system for answering public switch telephone number
Inventor: LIOU R-YANG
IPC: H04M3/00
Filed: 2001-10-03
Granted: 2003-03-01
Abstract: A query system for answering public switch telephone number, which installs a set of microcomputer system on the measurement station to replace the current on-duty people, and uses the caller ID display function by the switch system associated with the various function keys on the testing handset used by the line maintenance people to complete the works of number reporting and querying. The present invention can transfer the manual operation on the query of pairs of wires to the testing handset of the maintenance people, which can be completed by a computerized and automated operation method. The present invention not only provides the advantages of light-weighted and convenience, but also the functions of allowable-dialing and limited-dialing, which can meet the requirement of line maintenance people. The present invention is characterized in reducing the loading of the workers; and, also in providing accurate statistical reports, real-time monitoring process, and easy for use and maintenance.
Patent TW-514982-B (TW)
Title: Exposing method, aligner and mask
Inventor: MACHINO KATSUYA
IPC: G03F1/42
Filed: 2001-10-16
Granted: 2002-12-21
Abstract: There are provided an exposing method by which two patterns in adjacent shot areas are accurately exposed at aimed positions, and an aligner and a mask. In the case of exposing gate electrode patterns G1 and G2 on a substrate P, a G layer mark Rg1 is exposed and formed together with the pattern G1 first, and a G layer mark Rg2 is exposed and formed in the vicinity of the pattern G1 together with the pattern G2. Then, the relative positions of the marks Rg1 and Rg2 are measured. Based on the measured result, the exposing positions of the patterns G1 and G2 are adjusted to expose the patterns G1 and G2. Since the relative positions of the patterns G1 and G2 are accurately obtained by measuring the relative positions of the marks Rg1 and Rg2, the patterns G1 and G2 are accurately exposed to the aimed positions.
Patent TW-594402-B (TW)
Title: Novel onium salts, photoacid generators, resist compositions, and patterning process
Inventor: OHSAWA YOUICHI
IPC: C07C309/35
Filed: 2001-10-22
Granted: 2004-06-21
Abstract: This invention provides an onium salt of the following general formula (1), in which R1 is a substituted or unsubstituted aryl group of 6 to 14 carbon atoms, R2 is the same or different is hydrogen or a substituted or unsubstituted, straight chain, branched chain or cyclic alkyl group of 1 to 6 carbon atoms, R0 is a hydroxyl group, alkoxy group, halogen atom or nitro group, p is 1 or 2, q and r each are 0, 1 or 2, R3 which may be the same or different is a substituted or unsubstituted, straight, branched or cyclic alkyl group of 1 to 10 carbon atoms or substituted or unsubstituted aryl group of 6 to 14 carbon atoms, M is a sulfur or iodine atom, and a is equal to 3 when M is sulfur and equal to 2 when M is iodine. In the invented onium salts and the chemically amplified resist using the same, since the arylsulfonyloxynaphthalenesulfonate anions contains sulfonate group, it has excellent resolution, improved focal latitude, and little line width variation or shape degradation even on long-term PED, it also has minimized debris after coating, development and peeling, and improved pattern profile after development, especially in deep-UV lithography.
Patent TW-539804-B (TW)
Title: Control method for electromagnetic fuel pump
Inventor: HATAYAMA ATSUSHI
IPC: F02D41/22
Filed: 2001-12-26
Granted: 2003-07-01
Abstract: Control means 55 has a first operation mode set when a battery voltage VB with which a starter motor 33 can operate is detected, and a second operation mode set when a battery voltage VB with which the starter motor 33 cannot operate is detected and different from the first operation mode, and operation of a fuel pump 26 upon starting is controlled in either first operation mode or second operation mode. In a case wherein an engine is started by a kick starting apparatus and another case wherein the engine is started by a starter motor starting apparatus, preferable starting control of an electromagnetic fuel pump upon starting can be carried out with different control functions from each other. Thus, the engine startability by the kick starting apparatus, for example, when fuel is not present in a carburetor, can be improved. On the other hand, upon starting of the engine by the starter motor starting apparatus, electric power to be supplied to the fuel pump can be suppressed.
Patent TW-530000-B (TW)
Title: Method of manufacturing Fresnel lens
Inventor: WANG JYH-HORNG
IPC: B29D11/00
Filed: 2001-12-31
Granted: 2003-05-01
Abstract: Disclosed is a method of manufacturing Fresnel lens, including the steps of: locally applying an optical curing adhesive to a Fresnel mold; coating an acrylic substrate over the Fresnel mold applied with the optical curing adhesive by roll-pressing; illuminating a light beam towards the acrylic substrate and the Fresnel mold to cure the optical curing adhesive; detaching the optical curing adhesive from the Fresnel mold to obtain a Fresnel lens.
Patent TW-546652-B (TW)
Title: MRAM architecture and system
Inventor: NAJI PETER K
IPC: G11C11/16
Filed: 2002-01-28
Granted: 2003-08-11
Abstract: A magnetoresistive memory (10) fabricated on a common substrate. The memory including first and second spaced apart magnetoresistive memory arrays (11, 12) each including a plurality of MTJ memory cells (15) arranged in rows and columns and a plurality of word/digit lines associated with the rows of magnetoresistive memory cells of each of the arrays. Switching circuitry (50, 52, 54) is positioned on the substrate between the first and second arrays and designed to select a word/digit line in one of the first and second arrays. A current source (55) is positioned on the substrate adjacent and coupled to the switching circuitry for supplying programming current to the selected word/digit line.
Patent TW-526531-B (TW)
Title: Method of manufacturing semiconductor devices with use of wafer carrier having conditioning units
Inventor: NISHIKI KAZUHIRO
IPC: H01L21/677
Filed: 2002-01-31
Granted: 2003-04-01
Abstract: A method of manufacturing semiconductor devices uses a wafer carrier having conditioning units to control internal conditions of the wafer carrier. The wafer carrier stores and carries wafers between manufacturing equipments used in manufacturing processes. For each of the manufacturing processes, the method includes placing the wafer carrier on a load port, transferring the wafers from the wafer carrier into the manufacturing equipment through the load port, changing operating conditions of the conditioning units according to the process or test being carried out by the manufacturing equipment, returning the wafers into the wafer carrier through the load port after the completion of the process or test, and operating the conditioning units according to the changed operating conditions to control the internal conditions until the wafer carrier is carried to the next manufacturing equipment.
Patent TW-512129-B (TW)
Title: Method for forming microelectronic spring structures on a substrate
Inventor: ELDRIDGE BENJAMIN N
IPC: H01L23/482
Filed: 2002-02-08
Granted: 2002-12-01
Abstract: A method for fabricating microelectronic spring structures is disclosed. In an initial step of the method, a layer of sacrificial material is formed over a substrate. Then, a contoured surface is developed in the sacrificial material, such as by molding the sacrificial material using a mold or stamp. The contoured surface provides a mold for at least one spring form, and preferably for an array of spring forms. If necessary, the sacrificial layer is then cured or hardened. A layer of spring material is deposited over the contoured surface of the sacrificial material, in a pattern to define at least one spring form, and preferably an array of spring forms. The sacrificial material is then at least partially removed from beneath the spring form to reveal at least one freestanding spring structure. A separate conducting tip is optionally attached to each resulting spring structure, and each structure is optionally plated or covered with an additional layer or layers of material, as desired. An alternative method for making a resilient contact structure using the properties of a fluid meniscus is additionally disclosed. In an initial step of the alternative method, a layer of material is provided over a substrate. Then, a recess is developed in the material, and fluid is provided in the recess to form a meniscus. The fluid is cured or hardened to stabilize the contoured shape of the meniscus. The stabilized meniscus is then used to define a spring form in the same manner as the molded surface in the sacrificial material.
Patent TW-531795-B (TW)
Title: Self-aligned metal silicide process using cobalt silicide
Inventor: LIU CHI-KANG
IPC: H01L21/28
Filed: 2002-02-27
Granted: 2003-05-11
Abstract: A self-aligned metal silicide process using cobalt silicide is provided and is suitable for semiconductor substrate. First, form a gate structure that is composed by gate insulated layer, gate conductor layer and gate spacer layer on the substrate. Second, form source/drain area on the substrate on both sides of the gate structure. Deposit a cobalt metal layer on the gate structure and source/drain area. Then execute a first thermal process to form first cobalt silicide (Co-Si2) on the surfaces of the gate conductor layer and source/drain area. Remove the other cobalt layer un-reacted into the first cobalt silicide. Third, implant silicon ions into the gate conductor layer and source/drain area. Finally, execute a second thermal process to react the first cobalt silicide, Co-Six into the second cobalt silicide.
Patent TW-556443-B (TW)
Title: Interface apparatus provided between two remote control systems having different transmission modes
Inventor: HATEMATA TAKESHI
IPC: H04Q9/00
Filed: 2002-03-13
Granted: 2003-10-01
Abstract: In an interface apparatus provided between a first remote control system of polling communication system and a second remote control system of contention communication system, a control section executes at least one processing of the following processings based on mapping information of addresses. A first control processing is to transmit a transmission signal for controlling a second load unit to a second node unit responsive to a transmission signal which represents reception of a first input signal and is transmitted from a first terminal unit, thereby controlling the second load unit based on the first input signal. A second control processing is to transmit a transmission signal for controlling a first load unit to the first load unit responsive to a transmission signal which represents reception of the second input signal and is transmitted from the second node unit, thereby controlling the first load unit based on the second input signal.
Patent TW-546833-B (TW)
Title: Methods of forming microstructure devices
Inventor: LEUNG TOI YUE BECKY
IPC: B81B3/00
Filed: 2002-05-07
Granted: 2003-08-11
Abstract: The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.
Patent TW-586035-B (TW)
Title: Temperature compensation method and apparatus of optical fiber grating
Inventor: LIN YUNG-BIN
IPC: G02B6/34
Filed: 2002-06-03
Granted: 2004-05-01
Abstract: A kind of optical fiber grating temperature compensation method and apparatus are revealed in the present invention. The conducted method includes the following steps: providing an optical fiber on which an optical grating, and the first position as well as the second position on both sides of the longitudinal direction of the optical grating are provided; forming a metal film at the outer periphery of the optical fiber, so as to wrap the optical fiber and the first, the second positions; providing a base stand whose thermal expansion coefficient is greatly smaller than that of the optical fiber; and combining and fixing the first and the second positions of the optical fiber on the base stand. The metal film can assure the combination and fixing effects between the optical fiber and the base stand, and provides sufficient rigid property for the optical fiber, so as to reduce the strain amount of optical fiber due to temperature difference.
Patent TW-I244510-B (TW)
Title: A method of manufacturing hollow metallic element and electroforming equipment for use in such a method
Inventor: KENJO AKIRA
IPC: C25D1/02
Filed: 2002-07-12
Granted: 2005-12-01
Abstract: This invention relates to a method of manufacturing a hollow metallic element and an equipment for use in such a method, wherein the electro-deposit on core wires of the hollow metallic element have uniform thickness and outer diameter, and contains high precision of roundness and coaxiality. In this invention, the steps of method of manufacturing a hollow metallic element include: adhering electric conducting core wires onto the electro-deposit and placing the electro-depositing metallic material and one metallic mesh basket accommodating the mutually parallel electro-depositing metallic material; connecting two ends of core wires to the cathode of power source; connecting the electro-depositing metallic material or the mesh basket accommodating the electro-depositing metallic material to the anode; immersing the electro-depositing metallic material, mesh basket and core wires into an electrolyzing pool filled with an electrolytic solution. By means of electrification, and rotating the to-be-electroplated articles in the electrolyzing pool, electroformed products are manufactured by electroforming; after a predetermined thickness of the electroformed product is achieved, core wires are removed.
Patent TW-590829-B (TW)
Title: Cutting point for a drill
Inventor: SHAFFER WILLIAM A
IPC: B23B51/00
Filed: 2002-09-19
Granted: 2004-06-11
Abstract: A cutting point for a drill including a body having a periphery. The cutting point includes a leading cutting lip and a trailing cutting lip and a central chisel edge extending between the leading and trailing cutting lips and defining two symmetrical drill point halves. Each drill point half includes a primary relief surface, a secondary relief surface and a third relief surface. The third relief surface is inclined at an angle greater than the secondary relief surface and the secondary relief surface is inclined at an angle greater than primary relief surface.
Patent TW-561539-B (TW)
Title: Apparatus and process for producing polished semiconductor wafers
Inventor: NG KAN-YIN
IPC: B24B37/04
Filed: 2002-10-02
Granted: 2003-11-11
Abstract: A process for forming a semiconductor wafer which is single side polished improves nanotopography and flatness of the polished wafer. The process reduces the effect of back side surface features, such as edge ring phenomena and back side laser marks, on nanotopography and local site flatness, thereby improving oxide layer uniformity for chemical/mechanical planarization (CMP) processing, and flatness on the polished front side of the wafer a tier polishing. The wafer is mounted on a polishing block by wax so as to minimize transfer of imperfections in the wax to the front side of the wafer. In particular, the wafer is retained in a centered position on the polishing block. Moreover, the wafer is mounted at atmospheric pressure while still removing air bubbles from the wax.
Patent TW-I234767-B (TW)
Title: Disk system configuration structure for multiple disk arrays
Inventor: WANG JIUN-YI
IPC: G11B5/00
Filed: 2002-12-12
Granted: 2005-06-21
Abstract: The present invention relates to a configuration structure of disk management system, and especially to a disk system configuration structure for multiple disk arrays, which comprises an array signature, an array information, a disk information and serial checksum of each disk in the same disk array, which are stored in the last sector of each array disk. The array signature is to distinguish whether the disk belongs to the disk array or independent disk. The array information and disk information are recorded with each setup and state of the array and disk respectively. The serial checksum of each disk in the same disk array is arranged sequentially for the disks belonging to the array, the relationship among the state of each array and each disk can be confirmed rapidly by the system.