baber/WOPTO huggingface dataset:
Patent JP-S59118588-A (JP)
Title: Container ship
Inventor: UCHIDA TADASHI
IPC: B63B25/00
Filed: 1982-12-24
Abstract: PURPOSE:To efficiently carry out a cargo handling work, by locating container introducing hatches provided with cell guides on both broadsides of an upper deck, and providing stoppers for temporarily laying containers thereon below the hatches to laterally move the containers as temporarily laid and carry same along the cell guides into a hold. CONSTITUTION:There are located on both broadsides 2 of a hull upper deck 1 hatches 3 having cell guides 5 adapted to introduce containers (a) therein. Stoppers 8 for temporarily laying the containers thereon are provided below the cell guides 5 and above cell guides 6 in a hold. Further, there are provided cargo handling gears 7 consisting of guiders 7a and trolleys 7b for catching the containers (a) as temporarily laid on the stoppers 8 and carrying the containers (a) along a predetermined one of the cell guides 6 into and out of the hold. With this arrangement, it is rendered possible to carry out a cargo handling work in case of a large scale container ship, which has been difficult with a conventional harbor installation, and further to contribute to securing of a working area on the upper deck of the container ship and improvement of hull strength.
Patent JP-H0899949-A (JP)
Title: Polyamine having urea group,its production,and epoxy resin curative comprising it
Inventor: RAINAA GURASU
IPC: C08G59/50
Filed: 1995-09-11
Abstract: PROBLEM TO BE SOLVED: To obtain both a polyamine containing a urea group processable at a room temperature and a curing agent for an epoxy resin, containing the polyamine.  
     SOLUTION: Urea is reacted with a polyamine such as an ethylenediamine of the formula H 2 N-R-NH 2  (R is a 2-14C alkylene which may be substitute with 1-3 CH 3  groups or C 2 H 5  groups and 1-3 CH 2  groups of the alkylene may be replaced with O, NH or NCH 3  group) in the molar ratio of 1: (5-20) at 130-150°C to liberate about 80% of NH 3 . Then, the reaction mixture is heated to 200°C to a temperature to quantitatively separate NH 3 . After the reaction, an unreacted polyamine is separated by thin film evaporation at 100-180°C under 0.1 Torr to give a polyamine containing a urea group of the formula. Preferably the compound has 4-13 millimol/g basic amine content, 4-13 millimol/g urea group concentration and 5,000-10,000 mPas visocity at 25°C. 
     COPYRIGHT: (C)1996,JPO
Patent JP-S60147682-A (JP)
Inventor: SOOBITSKY JAMES A
IPC: G12B5/00
Filed: 1984-11-05
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H06211769-A (JP)
Title: N-hydroxy-n-phenylcarboxylic amide, its production and fungicide against pathogenic fungus
Inventor: KAARU AIKEN
IPC: A01N43/40
Filed: 1993-09-20
Abstract: PURPOSE: To obtain a new N-hydroxy-N-phenylcarboxamide preventing damage by Botrytis cenerea and useful as an industrial and agricultural fungicide.  
     CONSTITUTION: The N-hydroxy-N-phenylcarboxamide is a compd. of formula I [where R is 2-12C alkyl, 3-12C alkenyl, 3-6C alkynyloxy or the like; and A is a cyclic group of one of formulae II-IV (where R 1 , R 3 , R 5  and R 6  are each halogen, 1-4C alkyl or the like; and (n) is 1 or 2), etc.], e.g. N-hydroxy-N-(2- propylphenyl)-2-chloronicotinamide. The compd. of the formula I is obtd. by reacting a carboxylic acid halogenide of the formula Hal-CO-A with an N- hydroxyaniline of formula V in the presence of a base. 
     COPYRIGHT: (C)1994,JPO
Patent JP-H1174200-A (JP)
Title: Method for growing nitride semiconductor
Inventor: OGAWA GENICHI
IPC: H01L21/205
Filed: 1997-08-28
Abstract: PROBLEM TO BE SOLVED: To grow a nitride semiconductor having a good crystallinity on a silicon wafer by preventing a degas component from residual nitride deposit in a growing furnace from adhering to the wafer again. SOLUTION: A method for growing a nitride semiconductor in which a silicon wafer 1 is loaded in a growing furnace 2 for growing nitride semiconductor on the silicon wafer 1 comprises loading the silicon wafer 1 into a heating furnace 3 which is provided independently of a heating furnace 2, heat-treating the wafer 1 at a temperature equal to higher than 850 deg.C after introducing hydrogen into the heating furnace 3, and after that growing nitride semiconductor by transferring the silicon wafer 1 into the growing furnace 2 without exposing the wafer 1 to the atmosphere.
Patent JP-S61112392-A (JP)
Title: Semiconductor laser and manufacture thereof
Inventor: NAKATSUKA SHINICHI
IPC: H01S5/00
Filed: 1984-11-07
Abstract: PURPOSE:To obtain an element characterized by no astigmatism and excellent noise characteristics, by changing the width of the forbidden band of the third clad layer, which is provided on a light absorbing layer, in comparison with the other region of a semiconductor laser. CONSTITUTION:On a GaAs substrate 1, the first double heterostructure, which comprises a first clad layer 2 of N-Ga0.65Al0.45As, an undoped Ga0.86Al0.14As active layer 3 and a second clad layer 4 of P-Ga0.65Al0.35As, is formed. Then the second double heterostructure, which comprises the clad layer 4 on the active layer 3, a P-GaAs light absorbing layer 5 and a third clad layer 5 of P-Ga0.6Al0.4As, is formed. The propagation factor of the second double heterostructure is made larger than that of the first double heterostructure formed by the active layer. The composition of the third clad layer 6 in the region in the vicinity of the end surface of a laser stripe is made different from that in the region in the element. Thus the difference in refractive indexes between the inside and outer edge part of the stripe at the end surface part can be made large, and that in the element can be made small.
Patent JP-H1171912-A (JP)
Title: External structure of building
Inventor: KISHIMOTO MASASHI
IPC: E04H1/02
Filed: 1997-08-29
Abstract: PROBLEM TO BE SOLVED: To conveniently enter a main entrance or a service entrance or get out of it and also conveniently get in a car in a garage or get out of it and park bicycles or motor bicycles in a favorable condition. SOLUTION: First and second garages 1, 2 are arranged continuously to form a nearly L-shape along a corner of a housing site 4. The garages 1, 2 are isolated from the passage way 19 extending from a road R to the main entrance 15 and the passage way 19 is widened sideways to form a parking area 25 for bicycles. The common space 9 for driving in and out cars between both garages 1, 2 is connected to a service entrance 11 of a house 3.
Patent JP-S6389583-A (JP)
Title: Heat-sensitive tacky-adhesive composition and heat-sensitive tacky-adhesive sheet prepared by using the same
Inventor: KAGOTA NOBUHIRO
IPC: C09J123/28
Filed: 1986-10-02
Abstract: PURPOSE:To obtain a heat-sensitive tacky-adhesive compsn. which exhibits tackiness upon being heated and maintains the tackiness after heating, by compounding a high-molecular resin contg. a chlorinated polypropylene with a tackifier and a solid plasticizer to prepare an aqueous dispersion. CONSTITUTION:A compsn. comprising an aqueous dispersion of a resin of mainly a solid component prepd. by compounding 100pts.wt. high-molecular resin (a) contg. 0.5wt% chlorinated polypropylene with 10-120pts.wt. tackifier (b) and 50-300pts.wt. solid plasticizer (c). The aforesaid compsn. is applied to a base sheet in an aqueous state and dried, thereby preparing a heat-sensitive tacky- adhesive sheet. The high-molecular resin as component (a) is pref. a resin having an m.p. of 130 deg.C or below. Component (b) is pref. rosin or terpene resin having a softening point of 70-145 deg.C.
Patent JP-H0961044-A (JP)
Title: Anti-freezing refrigerator in ice temperature zone
Inventor: KATAYAMA TAKESHI
IPC: F25D11/02
Filed: 1995-08-18
Abstract: PROBLEM TO BE SOLVED: To prevent a drip phenomenon from being produced upon defreezing in a specific ice temperature zone by inducing high tension minus static electrons into a refrigerator with use of a plurality of static electron producing transformer, and producing a minus static electron zone with specific voltage to applying static electrons to a raw material. SOLUTION: High tension minus static electrons are induced to a inducing conductor 3 provided on an internal wall of a refrigerator from a plurality of minus static electrons producing transformer 4, and a minus static electric zone is produced in the refrigerator with a voltage between 1 volt and 4999 V. Thus, electric charges of the minus static electrons in a refrigeration chamber 6 are increased to apply ther minus static electrons to contained water and its constituent molecules of a raw material 5 to be frozen whereby an electric charge balance stable in a natural state is broken to produce the environment of static electron voltage. Hereby, donors of the minus electrons are produced in a raw material 5 to be refrigerated, and hence it is considered that active electron action is developed.  The raw material 5 does not reach a frozen state even in a the environment of 3 deg.C owing to such a phenomenon and is kept intactly.
Patent JP-S60126523-A (JP)
Title: Cooker
Inventor: HORINOUCHI ATSUSHI
IPC: F24C7/08
Filed: 1983-12-09
Abstract: PURPOSE:To improve an operating characteristic, reduce an erroneous operation and possibility of erroneous setting and make a simple construction of the operating panel by a method wherein when the cooking pattern is set, the block having keys arranged to be operated in subsequent operation is specified in sequence by the display means. CONSTITUTION:When a main switch is turned on, a display lamp L10 is lit to display the first stage. Then, the indicating lamp L10 in the first block 10 is lit and a selection whether the operation is a cooking under a setting of the heating time or a cooking caused under a setting of the finished temperature is indicated. In case that ''TIME'' key 11 is operated, the display lamp L11 is lit, then the indicating lamp L10 in the first block 10 is diminished and further the indicating lamp L20 indicating the key operation in the second block 20 is lit. In this way, the blocks having some keys are indicated in sequence. With this arrangement, the key operation may easily be performed, erroneous operation and erroneous setting or the like are also decreased and further it is possible to simplify the construction of the operating panel.
Patent JP-H1167695-A (JP)
Title: Liquid-filling method/device into fine hollow and plating method into fine hollow
Inventor: KOGURE NAOAKI
IPC: C25D3/38
Filed: 1997-08-13
Abstract: PROBLEM TO BE SOLVED: To provide a liquid filling method and a device into a fine hollow and to provide a plating method into the fine follow, which can fill the fine hollow provided on the surface of a base material with the various liquids of plating liquid. SOLUTION: The space round a semiconductor wafer 100 is sealed in a plating processing layer 1, and a vacuum evacuation means 3 vacuum-evacuates air. The gas with a large solubility (ammonia gas, sulfurous acid gas and carbon dioxide) is introduced in a gas supply means 5. Gas remains in the fine hollow provided on the surface of the semiconductor wafer 100 is dissolved in plating liquid, and the fine hollow is filled with plating liquid by introducing plating liquid into the plating processing layer 1 in a liquid supply means 7. Thus, the inner part of the fine hollow is filled with plating.
Patent JP-S59121349-A (JP)
Title: Electrophotographic method
Inventor: KAMIYAMA MITSUAKI
IPC: G03G15/01
Filed: 1982-12-28
Abstract: PURPOSE:To prevent turbidity of colors due to interference of each color without enlarging a device and to form a sharp color image by applying AC voltage unbalanced to the electrostatically charged polarity side of an image bearing body to the corona discharge to be given to said body prior to the second imagewise exposure, and electrostatically recharging it. CONSTITUTION:The voltage VA to be applied to an electrostatic recharger is expressed by the synthesized value of an AC voltage VAC and DC voltage VDC. Such superposed type rechargers 30a, 30b, 30c are used and a photosensitive body 8 is charged electrostatically to 1,000V with a recharger 7 by application of 5.6kV positive DC voltage, it is exposed with the first optical scanner 35, and the first development is carried out with the first developing device 34. Then, it is charged with the recharger 30a by application of voltage expressed by VDC=4.0KV and VAC=5.0KV, it is exposed with the second optical scanner 36, and the second development is executed with the second developing device 37. A sharp color image free from mixing of each color is obtained by successively executing such operations.
Patent JP-S60126542-A (JP)
Title: Water heater making use of solar system
Inventor: MORI KINYA
IPC: F24S90/00
Filed: 1983-12-09
Abstract: PURPOSE:To improve the heat exchange efficiency of an overall system by using both a heating system for water in a heating tank by means of the natural circulation action of refrigerant and a heating system for water in the heating tank by means of a freezing cycle. CONSTITUTION:Heat exchangers 4A, 5A make up a circulating hot water supply system in cooperation with a hot water reservoir tank 17. When the amount of sunshine is adequate, a heat collecting plate 1 is solely used as a heat source. When there is sunshine, the heat collecting plate 1 is heated, and the refrigerant such as flon gas in refrigerant pipe 2 in the heat collecting pipe 1 becomes high-temperature, high-pressure steam which enters the heat exchanger 4A to form a circulation loop of the refrigerant as shown by solid line arrows, and hot water at a suitable temperature is stored in the hot water reservoir tank 17. When the amount of sunshine is inadequate, the heat generated during the adiabatic compression process of the refrigerant by a compressor 14 is used in addition to the heat collecting plate 1. That is, as a preparatory process, a three-way valve 11 is switched and the compressor 14 is started to introduce the refrigerant liquid staying in the refrigerant pipe 2 into an expander 15 to gasify the same which is then drawn into the compressor 14. At the moment when there is no refrigerant liquid in the refrigerant pipe 2, a normal operating mode is assumed, and a freezing cycle by the heat exchanger 5A is completed.
Patent JP-H0282273-A (JP)
Title: Electrophotographic recorder and its control method
Inventor: HORI YASURO
IPC: G03G15/08
Filed: 1988-09-20
Abstract: PURPOSE:To stably perform recording to the extent of high density by measuring the electrostatically charged quantity of developer and consequently controlling the electrostatically charged quantity so that it may be a prescribed value. CONSTITUTION:In the flow of the developer, a measuring mechanism 1 and a control mechanism 30 are provided on the upstream side of an electrostatic charger 2. As to the developer, the electrostatically charged quantity is controlled by the electrostatic charging mechanism 2 based on the measured results to obtain the prescribed electrostatically charged quantity. The prescribed electrostatically charged quantity means the always fixed quantity of charges which should be given to the developer and also means the quantity of charges necessary to maintain the recording with the initial density of electrophotography or the high density. The developer having prescribed electrostatically charged quantity is conveyed to a developing brush 3 and development is performed by allowing toner to adhere to the photosensitive body. Thus, the change of the electrostatically charged quantity of the developer caused by the fatigue of developer, the change of toner concentration and the change of temperature and humidity, etc., can be prevented and also the stable recording density can be accomplished.
Patent JP-S6474954-A (JP)
Title: Breeding of abalone and sea urchins
Inventor: KIKUCHI MINE
IPC: A23K1/18
Filed: 1987-09-17
Abstract: PURPOSE:To breed abalone and sea urchins over a long period in a state comparable to those bred with fresh sea trumpet, by spontaneously drying fresh tangles to semi-dried state, sealing and storing in an inert gas atmosphere and feeding abalone and sea urchins with the stored tangles. CONSTITUTION:Fresh tangles are semi-dried by spontaneous drying method to a water-content of preferably 20-50% and are sealed and stored in an inert gas atmosphere. The stored tangles are fed to abalone and sea urchins.
Patent JP-H0685137-A (JP)
Title: Manufacture of package for storing semiconductor element
Inventor: KUNIMATSU YASUYOSHI
IPC: H01L23/04
Filed: 1992-09-01
Abstract: PURPOSE:To provide a manufacturing method for a semiconductor-device storing package, in which a metallized pad on an insulating board is firmly joined to a given outer terminal with no fear of a defective short circuit between the metallized pads. CONSTITUTION:A plurality of metallized pads 7 are formed in an enclosed line on a surface of an insulating container so that the end of the pads 7 are projected by turns on the inward or outward sides. The outward projected metallized pads 7a are joined in common at their projected regions with a first belt-shaped solder material 11a, while the inward projected metallized pads 7b are joined in common at their projected regions with a second belt- shaped solder material 11b. Then, an tip part of an outer lead terminal 8 is mounted on each metallized pad 7 and the first and second belt-shaped solder materials 11a and 11b are melted by heat so that the outer lead terminal 8 is joined to each metallized pad 7.
Patent JP-S60217096-A (JP)
Inventor: MURANO TOSHIKAZU
IPC: B26D3/28
Filed: 1984-11-06
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0395886-A (JP)
Title: Spark plug and its manufacture
Inventor: KAWATO YASUSHI
IPC: H01T13/02
Filed: 1989-09-07
Abstract: PURPOSE:To manufacture a spark plug which has high reliability and durability and the diameter of which is easily reduced by forming an insulative coating layer of flame sprayed film, etc., in a required portion of a mounting metal fitting, and subjecting the layer to hot hydrostatic proof treatment. CONSTITUTION:An insulative coating layer 60 is formed by flame spraying over at least that end face of a mounting metal fitting 10 which faces a center electrode 40 and that portion of an earth electrode 50 which is other than the center electrode opposite portion 50a thereof. The layer 60 is subjected to hot hydrostatic proof treatment, so that the end face of the metal fitting 10 is completely sealed by the insulative coating layer; thus a spark plug the diameter reduction of which is easy is manufacture while its reliability, durability and contamination resistance are enhanced.
Patent JP-H1171527-A (JP)
Title: Curable polymer aqueous dispersion, its production and coating material
Inventor: SHIRAGA JUN
IPC: C09D133/00
Filed: 1997-08-29
Abstract: PROBLEM TO BE SOLVED: To obtain the subject dispersion that can give cured products excellent in resistance to water or solvents and in mechanical strength even when reducing the use amount of an emulsion or without using an emulsion by formulating specific polymer particles and a specific compound to the dispersion. SOLUTION: This dispersion comprises (A) polymer particles of condensate of (i) a polymer containing carboxyl groups, when necessary, hydrolyzable silyl groups and/or silanol groups and groups reactive with a basic nitrogen atom-containing group, (ii) an ethylenic polymer bearing a basic nitrogen atom- containing group (for example, a tertiary amino group and (iii) a polysiloxane of a condensate of an alkoxysilane of the formula: (<1> )a -Si-(X<1> )4-a (R<1> is H, a 1-20C organic group; X<1> is a monovalent group such as a halogen or amino; (a) is 0-3) and (B) a polyfunctional epoxy compound preferably bearing an epoxy group, a hydrolyzable silyl group and/or silanol group in one molecule.
Patent JP-H0282223-A (JP)
Title: Method for controlling threshold value of thin-film transistor
Inventor: OURA MICHIYA
IPC: H01L29/78
Filed: 1988-09-20
Abstract: PURPOSE:To stabilize contrast at all times by excessively raising the threshold value once in a positive direction, then impressing a prescribed negative voltage to a gate for a prescribed period of time to return the threshold in a negative direction and moving the threshold to the positive direction as compared to the initial value. CONSTITUTION:Electrons are trapped in the deep energy level in the gate SiNx of the thin-film transistor when the prescribed positive voltage with respect to the source and drain thereof is impressed for a prescribed period of time to the gate SiNx and a threshold value is excessively raised once in a positive direction. The electrons trapped in the deep energy level in the SiNx, therefore, remain without moving even if the prescribed negative voltage is impressed for a prescribed period of time to the same gate thereafter and the threshold value is returned in the negative direction. The stability of the threshold value is consequently improved. The contrast is stabilized at all times in this way.
Patent JP-S59124713-A (JP)
Title: Liquid phase epitaxial growth method
Inventor: NAKAI SABUROU
IPC: H01L21/208
Filed: 1982-12-29
Abstract: PURPOSE:To obtain a liquid phase epitaxial growth method which is capable of forming a growth layer in the uniform thickness on a substrate by previously forming a layer consisting of metal having a low melting point and a high terminal conductivity on the rear surface of substrate. CONSTITUTION:A layer 2 consisting of indium, for example, having a melting point of about 157 deg.C is formed at the rear surface of substrate 1 made of the N type indium. A substrate 1 is placed on a boat for growth. A growth apparatus as a whole, where solute of growth solution is reserved in the reservoir together with solvent, is pre-procesed. When a cooling temprature becomes 660 deg.C, the slider A is slid toward direction A. Thereby, the growth solution 31 for first layer is placed in contact with the surface of substrate 1. When the temperature reaches 650 deg.C, the growth solution 32 for second layer, when the temperature is lowered to 645 deg.C, the growth solution 33 for third layer are respectively placed in contact with the surface of substrate. When the temperature is lowered to 640 deg.C, growth of third layer comes to the end. In this process, the indium layer 2 fuses quickly and the solution is distributed from corner to corner without generating gap between the rear surface of substrate and the bottom part 12 of recessed part. Thereby, an epitaxial layer in the equal thickness can be formed.
Patent JP-H1172248-A (JP)
Title: House
Inventor: UMETSU HIROYUKI
IPC: F24F11/02
Filed: 1997-08-29
Abstract: PROBLEM TO BE SOLVED: To rapidly give an alarm or warning to a resident by minimizing heat input/output of interior exterior of a house in a highly airtight house, efficiently cooling or heating it, improving durability, and detecting harmful compound for effecting adverse influence to a human body. SOLUTION: The house A comprises an attic space 1, living space 2, an underfloor space 3 in such a manner that the space 1 communicates with the space 3 via a wall space 10 between an inner wall 8 and outer wall, a roof heat insulation sealing layer 6 and an outer wall heat insulation sealing layer 7 formed at a roof surrounding the space and the outer wall, an air supply port 9 and exhaust port 11 arranged in the space 2 in such a manner that the port 11 is connected to a heat exchanger D disposed in the housing A. Thus, the air of the space 2 is externally exhausted via the exchanger D. Meanwhile, the external air is exhausted into the space 3 via the exchanger D. The house A also comprises a sensor for detecting detrimental chemical substance contained in the air at one position in the house A, and an alarm warning unit for warning an alarm according to a signal from the sensor.