baber/WOPTO huggingface dataset:
Patent TW-483808-B (TW)
Title: Substrate carrying device
Inventor: SAINO KOUSAKU
IPC: B65G49/07
Filed: 2000-12-11
Granted: 2002-04-21
Abstract: To achieve a small minimum rotating radius in a plurality of end effectors or in a substrate carrying device having a plurality of end effectors and sensor arms, thereby contributing to a reduction in setting area of a substrate processing device. A plurality of end effectors 5 is disposed such that a vertex angle circumscribes a cone side 4 with a vertex angle 2 θ with an axis 3, which forms an arbitrary angle θ with respect to a horizontal surface 2, as a center axis. Substrates are replaced when the end effectors are on a horizontal position to simultaneously carry the plurality of substrates. Further, since the end effectors are disposed in a three-dimensional appearance, it is possible to reduce a minimum rotating radius of the device projected onto a horizontal surface.
Patent TW-552486-B (TW)
Title: Program timer
Inventor: HATEMATA TAKESHI
IPC: H05B37/02
Filed: 2000-12-14
Granted: 2003-09-11
Abstract: A timer processing section 10 instructs a transmission processing section 11 to control load in accordance with a time schedule stored in a program storage section 12. The transmission processing section 11 is connected to a two-wire signal line and gives a load control instruction to each terminal to which load is connected according to a time-division multiplex transmission system. The time schedule stored in a program storage section 12 is a set of the address related to the load to be controlled and the control contents and the control time of the load. Therefore, when the time set according to the time schedule is reached, the load specified by the address is controlled.
Patent TW-463345-B (TW)
Title: Manufacturing process of enhanced direct heat dissipation type BGA substrate
Inventor: CHEN GUO-BIN
IPC: H01L23/34
Filed: 2000-12-22
Granted: 2001-11-11
Abstract: The present invention relates to a manufacturing process of enhanced direct heat dissipation type BGA substrate, which comprises first forming a core area and a periphery area on a heat dissipation board, wherein the core area has two side faces formed thereon an upper protrusion portion and a lower protrusion portion, and the periphery area has a plurality of isolating insulation holes for passing through the heat dissipation board; coating a pre-immersed member having openings on the upper and lower side surfaces of the heat dissipation board, so that the upper and lower protrusion portions are placed in the openings of the pre-immersed member respectively; padding the upper and lower side faces of the heat dissipation board with thick release films, respectively, for pressing, to plugging the insulation holes of the heat dissipation board; removing the release films and coating a resin layer on each of the upper and lower side faces of the heat dissipation board; and finally forming a whole face of copper layer on the surfaces of the upper and lower resin layers.
Patent TW-505890-B (TW)
Title: Optical security device
Inventor: MOIA FRANCO
IPC: B42D25/29
Filed: 2001-01-31
Granted: 2002-10-11
Abstract: In order to provide comprehensive and multipurpose security, an optical security device comprises a substrate (10), and at least a first optically structured layer (14) which is such as to provide first, second and third optical inspection levels, namely a first inspection level (2) where a first optical property can be discerned with the naked eye, a second level (4) in which an object can be discerned with the aid of an optical inspection tool (26), and a third level (6) in which an encrypted object can be discerned with a decrypting optical inspection tool (20). The first layer (14) is constructed as a retarder plate of LCP material, having an array of elemental areas having different predetermined orientations.
Patent TW-518291-B (TW)
Title: Ultrasonic transceiver and vehicle's surrounding obstruction sensor
Inventor: NISHIMOTO YUKIO
IPC: G10K11/00
Filed: 2001-02-01
Granted: 2003-01-21
Abstract: A ultrasonic transceiver includes a case for housing a ultrasonic sensor having a transducer provided therein, and a resilient member to be interposed between the case and an ultrasonic sensor. The surface of the case opposing the side surface of the ultrasonic sensor is tapered with respect to the surface of the ultrasonic sensor without involvement of the resilient member.
Patent TW-492069-B (TW)
Title: Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
Inventor: HAMAGUCHI SHINICHI
IPC: H01J37/317
Filed: 2001-04-04
Granted: 2002-06-21
Abstract: An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other, the multi-axis electron lens has a plurality of lens openings; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens to control the electron beams passing through the lens openings.
Patent TW-I282811-B (TW)
Title: Die-attaching paste and semiconductor device
Inventor: TANAKA NOBUKI
IPC: C08F2/44
Filed: 2001-04-06
Granted: 2007-06-21
Abstract: The present invention provides a die-attaching paste superior in solder cracking resistance, used for bonding of semiconductor chips. The present invention lies in a die-attaching paste comprising as essential components: (A) a hydrocarbon having a number-average molecular weight of 500 to 5,000 and at least one double bond in the molecule, or its derivative, (B) a reactive diluent, (C) a radical polymerization catalyst, and (D) a filler.
Patent TW-512354-B (TW)
Title: Semiconductor memory apparatus and method for outputting data
Inventor: HIBINO KENJI
IPC: G11C16/04
Filed: 2001-04-10
Granted: 2002-12-01
Abstract: A semiconductor memory device (100) having an array of ROM cells (101) based on a flat cell architecture has been disclosed. Semiconductor memory device (100) can include a y-selector (103) coupled between a sense amplifier (102) and array (101). During a read operation, the y-selector can electrically connect a selected digit line (D2) and an adjacent digit line (D3) to the sense amplifier. Y-selector (103) can couple a next digit line (D4) to a precharge voltage that may be supplied by a precharge circuit (104). A virtual ground selector (105) can apply a ground voltage level from a main virtual ground line (VG1) to sources of a column of memory cells including a selected memory cell (310). Virtual ground selector (105) can apply a precharge voltage to an adjacent main virtual ground line (VG2). In this manner, a minimum sensing current, when a series of memory cells along a selected word line (WO1) are on-bit cells, can be improved.
Patent TW-I283587-B (TW)
Title: Patch containing anti-inflammatory agent
Inventor: IKEURA YASUHIRO
IPC: A61K31/407
Filed: 2001-04-18
Granted: 2007-07-11
Abstract: An antiinflammatory-containing plaster comprising 5-40% by mass of a styrene-isoprene-styrene block copolymer, 1-25% by mass of a high molecular weight polyisobutylene, 0.5-24% by mass of a low molecular weight polyisobutylene, 3-50% by mass of a tackifier, 20-70% by mass of a plasticizer, 0.01-7% by mass of a dispersant, and 0.1-8% by mass of an antiinflammatory having a carboxyl group or a salt thereof, but which contains no L-menthol, wherein the medicament release rate at one hour after the start of test is 20-64% by mass and the medicament release rate at three hours after the start of test is 40-93% by mass according to the water-releasing test using a rotating cylinder described in the release test as prescribed in United State Pharmacopoeia.
Patent TW-522632-B (TW)
Title: LCD backlight inverter
Inventor: MIN BYOUNG-OWN
IPC: H02M3/337
Filed: 2001-05-08
Granted: 2003-03-01
Abstract: It is disclosed about a LCD backlight inverter for controlling the overvoltage with a stable output in respect to the fluctuation of an input voltage and preventing an effect to a feedback controlling block in opening a lamp used as backlight. An overvoltage protection circuit of the LCD backlight inverter comprises a first comparting block for comparing the dimension of feedback signal with the dimension of a first reference voltage, wherein the feedback signal detects the dimension of the voltage according to on/off status of the backlight lamp in the rear end; a second comparing block for comparing the dimension of the voltage divided in the overvoltage protection circuit with the dimension of a second reference voltage; and a switching controlling block for receiving output signals from the first and second comparing blocks and controlling on/off status of the buck switch according to corresponding comparison signals. The output voltage can be constantly controlled at any time according to the change of the input voltage by using means for controlling the overvoltage in opening the lamp, and also an effect about an abnormal noise of the feedback signal can be minimized in the normally operating status.
Patent TW-I287995-B (TW)
Title: Dermatological composition containing co-enzyme Q as active ingredient
Inventor: FUJII KENJI
IPC: A61Q19/10
Filed: 2001-05-09
Granted: 2007-10-11
Abstract: The present invention provides a composition for dermal application which comprises, as an active ingredient, an oxidized coenzyme Q represented by the formula (1), in which n represents an integer of 1 to 12, and/or a reduced coenzyme Q represented by the formula (2), in which n represents an integer of 1 to 12, the total content of the oxidized coenzyme Q and reduced coenzyme Q being 0.01 to 99% by weight relative to the whole amount of the composition. The present invention also provides a therapeutic composition for skin diseases, a cosmetic composition, a skin health care composition and a bath salt composition, each comprising the above composition for dermal application. The present invention is further provides a method for the treatment of skin diseases which comprises applying, to a patient suffering from a skin disease, the above-mentioned therapeutic composition for skin diseases, or a method for the treatment of skin diseases which comprises applying, to a patient suffering from a skin disease, the above therapeutic agent for skin diseases other than the oxidized coenzyme Q represented by the formula (1) and other than the reduced coenzyme Q represented by the formula (2) in parallel with a therapeutic composition for skin diseases.
Patent TW-506012-B (TW)
Title: Apparatus and method for improving electron acceleration
Inventor: QUON BILL H
IPC: H01L21/3065
Filed: 2001-05-29
Granted: 2002-10-11
Abstract: Apparatus and method for supplying a bias voltage to a wafer chuck in a plasma reactor system, in which an RF voltage source produces a relatively low frequency RF voltage, a VHF voltage source produces a VHP voltage having a higher frequency than the RF voltage, and a coupling circuit connected between the RF and VHF voltage sources and the wafer chuck combines the RF and VHF voltages for application to the wafer chuck.
Patent TW-587115-B (TW)
Title: Method and device for making a spun-bonded non-woven
Inventor: HEB MICHAEL
IPC: D04H3/16
Filed: 2001-06-27
Granted: 2004-05-11
Abstract: A method for producing a spun-bonded non-woven fabric by extruding a linear sheet of filaments arranged in parallel, side by side in the form of a curtain from a plurality of spinning capillaries, involving aerodynamical pulling off and drawing of the filament sheet, the filament sheet (8) which emerges from the drawing duct (12) or which is pulled off a spool being moved laterally crosswise by an air flow with periodically changing directions, the air flow being oriented alternately at an angle toward the filament sheet (8) as viewed in the horizontal plane.
Patent TW-I236616-B (TW)
Title: Storing stack operands in registers
Inventor: NEVILL EDWARD COLLES
IPC: G06F9/30
Filed: 2001-09-25
Granted: 2005-07-21
Abstract: A data processing apparatus (102) includes a processor core (104) having a bank of registers (106). The bank of registers (106) include a set of registers that are used for the storage of stack operands. Instructions from a second instruction set specifying stack operands are translated by an instruction translator (108) into instructions of a first instruction set (or control signals corresponding to those instructions) specifying register operands. These translated instructions are then executed by the processor core (104). The instruction translator (108) has multiple mapping states for controlling which registers corresponding to which stack operands within the stack. Changes between mapping states are carried out in dependence of stack operands being added to or removed from the set of registers.
Patent TW-560047-B (TW)
Title: Semiconductor device having a ferroelectric capacitor and fabrication process thereof
Inventor: TAKAMATSU TOMOHIRO
IPC: H01L21/314
Filed: 2001-09-27
Granted: 2003-11-01
Abstract: A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper electrode is formed of a first layer of a non-stoichiometric oxide and a second layer of a non-stoichiometric or stoichiometric oxide provided on the first layer, the second oxide having a composition closer to the stoichiometric composition as compared with the first layer.
Patent TW-522552-B (TW)
Title: Method of manufacturing capacitor in semiconductor devices
Inventor: SONG CHANG-ROCK
IPC: H01L21/8242
Filed: 2001-10-17
Granted: 2003-03-01
Abstract: A method of manufacturing a capacitor in semiconductor devices, the method comprising forming a silicon oxide film on a surface of a silicon substrate; forming a nitride film on said silicon oxide film; forming a contact hole; depositing a doped polysilicon layer; performing an etch-back process to remove a portion of said doped polysilicon layer; forming an ohmic contact layer over said doped polysilicon layer in said contact hole; forming an anti-diffusion film on said ohmic contact layer; forming a silicate glass film; forming a concave hole by etching a portion of said silicate glass film; forming a Ruthenium lower electrode on said internal wall of said concave hole; forming a BST dielectric film on said first Ruthenium electrode; crystallizing said BST dielectric film; forming an upper electrode on said BST dielectric film, thereby forming a capacitor; and performing a thermal treatment to stabilize said capacitor.
Patent TW-570873-B (TW)
Title: Polypropylene multilayered film
Inventor: IRIYA ISAMU
IPC: B32B27/32
Filed: 2001-11-23
Granted: 2004-01-11
Abstract: The purpose of the present invention is to provide a non-chlorine type polypropylene multilayered film excellent in adhesion, transparency, heat resistance, flexibility, gas barrier properties, touch properties and cutting properties. The polypropylene multilayered film includes at least a surface layer and an inner layer comprising a gas barrier resin and is stretched at a stretch ratio of 2 or more in a longitudinal or lateral direction and has a tensile elastic modulus of 200-1,000 MPa. In the multilayered constitution of this film, the surface layer comprises a composition prepared by mixing a polypropylene resin, and a softening agent, an adhesion agent and a liquid adhesion auxiliary agent in a proper mixing ratio and the inner layer comprises an ethylene/vinyl alcohol copolymer resin.
Patent TW-544567-B (TW)
Title: Flexible electronic device
Inventor: LICHTFUSS HANS A
IPC: G02F1/1345
Filed: 2002-01-28
Granted: 2003-08-01
Abstract: A flexible electronic device (100) having a flexible display device (130) operatively connected to a flexible circuit substrate (133) wherein the flexible circuit substrate (133) outputs electric signals to the flexible display device (130) causing the flexible display device (130) to display data.
Patent TW-I264614-B (TW)
Title: A lithographic projection apparatus, a grating module, a sensor module, a method of measuring wave front aberrations
Inventor: BASELMANS JOHANNES JACOBUS MAT
IPC: G01M11/02
Filed: 2002-02-08
Granted: 2006-10-21
Abstract: A lithographic projection apparatus comprising an illumination system; a support structure for holding a mask; a substrate table for holding a substrate; a projection system for projecting a pattern onto a target portion of the substrate; and an interferometric measurement system for measuring wave front aberrations of the projection system, characterized in that the interferometric measurement system comprises: a grating, featuring a grating pattern in a grating plane, said grating being movable into and out of the projection beam, such that the grating plane is substantially coincident with said object plane; a pinhole, featuring a pinhole pattern in a pinhole plane and arranged in a pinhole plate, said pinhole being movable into and out of the projection beam, such that the pinhole plane is substantially coincident with a plane downstream of the projection system and optically conjugate to said object plane, and a detector with a detector surface substantially coincident with a detection plane, said detection plane located downstream of the pinhole at a location where a spatial distribution of the electric field amplitude of the projection beam is substantially a Fourier Transformation of a spatial distribution of the electric field amplitude of the projection beam in the pinhole plane.
Patent TW-561436-B (TW)
Title: Device to indirectly illuminating an information-carrier
Inventor: SCHMIDT JANN
IPC: G09F13/02
Filed: 2002-05-21
Granted: 2003-11-11
Abstract: The invention relates to a device to indirectly illuminate an information-carrier composed of an information-carrier (1), a light-source (2) and a transparent element (3) composed of glass or plastics, characterized in that the transparent element (3) has a smooth face (31) and a rough face (32) opposite to the smooth face, where the rough face (32) has a rough-depth Rz of 1 to 20 mum according to DIN 4768 and Ra of 0.2 to 5 mum, the information-carrier (1) faces the rough surface (32) and is adjacent to it, so that said information-carrier (1) can be observed from the smooth face (31) through the transparent element and the light-source (2) is arranged on another face (33) of the transparent element (3), so that said light-source (2) can indirectly illuminate the information-carrier (1) through the out-coupling of the light on the rough face (32) of the transparent element (3).
Patent TW-544968-B (TW)
Title: Conductive catalyst particle and method for manufacturing the same, gas diffusive catalyst electrode and electrochemical device
Inventor: KATORI KENJI
IPC: B22F1/17
Filed: 2002-05-29
Granted: 2003-08-01
Abstract: The present invention provides conductive catalyst particles which do not give rise to sintering and are excellent in catalyst characteristics and a method for manufacturing the same, a gas diffusive catalyst electrode and an electrochemical device. The inventive conductive catalyst particles stuck with a catalyst material consists of an alloy of a noble metal material and an additive material of a thermally non-solid soluble system to the noble material on the surface of a conductive powder and the method for manufacturing comprises simultaneously bonding this noble metal material and additive material to the surface of the conductive powder by a physical vapor deposition process, so as to obtain the conductive catalyst particles stuck with the catalyst material. In the inventive conductive catalyst particles and the manufacturing method of inventive conductive catalyst particles, the surface of the conductive powder is attached with a catalyst material consisting of the alloy of MI (wherein MI is noble metal element selected from Pt, Ir, Pd, Rh, Au and Ru) and MII (wherein MII is selected from Fe, Co, Ni, Cr, Al, Cu, Hf, Zr, Ti, V, Nb, Ta, W, Ga, Sn, Ge, Si, Re, Os, Pb, Bi, Sb, Mo, Mn, O, N, F, C, Zn, In or rear earth elements).
Patent TW-582097-B (TW)
Title: Power pads for application of high current per bond pad in silicon technology
Inventor: FRIESE GERALD
IPC: H01L23/485
Filed: 2002-06-27
Granted: 2004-04-01
Abstract: A structure for a bond pad used on a semiconductor device, in accordance with the present invention, includes a metal layer, an interconnect formed through a dielectric layer connecting to the metal layer and a bond pad having a first portion disposed over the metal layer and the interconnect, and a second portion disposed over the dielectric layer. The first portion includes a bond area for providing an attachment point for a connection, and the second portion includes a probe area for providing contact with a probe.
Patent TW-590817-B (TW)
Title: Method for integrally forming seamless pipe for G.I.S.
Inventor: JU JI-WEN
IPC: B21C23/00
Filed: 2002-07-22
Granted: 2004-06-11
Abstract: A method for integrally forming a seamless pipe for G.I.S. comprises: (1) preparing a metal raw material having ductility; (2) preheating the raw material; (3) preheating a first mold; (4) mounting the preheated raw material in a first mold to perform a first blank forming procedure in order to expand a first end of the blank into a disk by the compression of the core of a press mold, to compress a recess part on the disk center, and to form a protruded rim on the periphery of the disk; (5) preheating the blank and a second mold; (6) mounting the recess part of the blank on a base mold, the periphery of which being mounted with the second mold in order to perform a compression formation of a seamless pipe. The reciprocating linear compression of the core of the compression mold enables the ductile metal blank of the blank to extend along the vertical wall of the second mold. A second end of the blank is expanded into a disk, and the blank is progressively punched through by the core of the compression mold to form an integrally formed seamless pipe having a disk on the two ends thereof.
Patent TW-552712-B (TW)
Title: Insulating gate AlGaN/GaN HEMT
Inventor: PARIKH PRIMIT
IPC: H01L31/0328
Filed: 2002-07-24
Granted: 2003-09-11
Abstract: AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer (20) with a barrier semiconductor layer (18) on it. The barrier layer (18) has a wider bandgap than the high resistivity layer (20) and a 2DEG (22) forms between the layers. Source and drain contacts (13, 14) contact the barrier layer (18), with part of the surface of the barrier layer (18) uncovered by the contacts (13, 14). An insulating layer (24) is included on the uncovered surface of the barrier layer (18) and a gate contact (16) is included on the insulating layer (24). The insulating layer (24) forms a barrier to gate leakage current and also helps to increase the HEMT's maximum current drive. The invention also includes methods for fabricating HEMTs according to the present invention. In one method, the HEMT and its insulating layer are fabricated using metal-organic chemical vapor deposition (MOCVD). In another method the insulating layer is sputtered onto the top surface of the HEMT in a sputtering chamber.
Patent TW-584597-B (TW)
Title: Anti-reflective and anti-static multi-layer thin film for display device
Inventor: KANG TAE-SOO
IPC: G02B1/116
Filed: 2002-07-31
Granted: 2004-04-21
Abstract: An anti-reflective and anti-static multilayer structure for display device, comprising a glass substrate, and an ITO layer, a first Nb2O5 layer, a first SiO2 layer, a second Nb2O5 layer and a second SiO2 layer, which are successively formed on the glass substrate, achieves good film adhesive strength, solidity and enhanced photoreflectance.