Patent SG-11201408432Y-A (SG)
Title: Manufacturing semiconductor-based multi-junction photovoltaic devices
Inventor: AHMARI DAVID
IPC: H01L31/042
Filed: 2013-06-21
Abstract: (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 27 December 2013 (27.12.2013) WIPOIPCT (10) International Publication Number WO 2013/192559 A1 (51) International Patent Classification: H01L 31/0725 (2012.01) H01L 31/18 (2006.01) H01L 31/042 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/047127 21 June 2013 (21.06.2013) English (30) Priority Data: 61/663,374 61/718,708 22 June 2012 (22.06.2012) 26 October 2012 (26.10.2012) English US US (71) Applicant: IZAR SOLAR INC [US/US]; 1606 Rion Drive, Champaign, Illinois 61822 (US). (72) Inventors: AHMARI, David; 3006 Glenhill Place, Cham­ paign, Illinois 61822 (US). LIM, Swee; 1125 Baytowne Drive, Apt. 24, Champaign, Illinois 61822 (US). RAI, Shiva; 4005 Aberdeen Drive, Champaign, Illinois 61822 (US). FORBES, David; 527 W. Sturbridge Drive, Medina, Ohio 44256 (US). (74) Agent: LIANG, Bing; 6100 219th ST S.W., STE 580, Mountlake Terrace, Washington 98043 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] (54) Title: MANUFACTURING SEMICONDUCTOR-BASED MULTI-JUNCTION PHOTOVOLTAIC DEVICES — 100 o\ CJ o\ i-H cn i-H o CJ O £ 140C. 142B. MOB. 142A. 140A Third Cell Tunnel Junction B Second Cell Tunnel Junction A First Cell (Substrate) (57) Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also ad­ apted to provide for a more uniform and consistent fabrica­ tion of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semicon­ ductor elements in one or more semiconductor layers, result­ ing in a more optimal solar cell device. y IOOA FIG. 1A WO 2013/192559 A11 lllll llllllll II llllll III lllll lllll III III III lllll lllll lllll lllll lllll llll llll lllllll llll llll Published: — with international search report (Art. 21(3))