baber/WOPTO huggingface dataset:
Patent TW-468292-B (TW)
Title: Narrow band laser with fine wavelength control
Inventor: ALGOTS JOHN M
IPC: G02B5/18
Filed: 2000-10-17
Granted: 2001-12-11
Abstract: A smart laser having automatic computer control of pulse energy, wavelength and bandwidth using feedback signals from a wavemeter. Pulse energy is controlled by controlling discharge voltage. Wavelength is controlled by very fine and rapid positioning of an RMax mirror in a line narrowing module. Bandwidth is controller by adjusting the curvature of a grating in the line narrowing module. Preferred embodiments include automatic feedback control of horizontal and vertical beam profile by automatic adjustment of a prism plate on which beam expander prisms are located and automatic adjustment of the RMax tilt. Other preferred embodiments include automatic adjustment of the horizontal position of the laser chamber within the resonance cavity. In preferred embodiments, feedback signals from a wavelength monitor are used to position the RMax mirror. In other preferred embodiments a separate laser beam reflected off the RMax mirror on to a photodiode array is used to position the mirror.
Patent TW-493273-B (TW)
Title: Active pixel sensor with enhanced reset
Inventor: MENTZER RAY A
IPC: H04N5/376
Filed: 2000-10-12
Granted: 2002-07-01
Abstract: An active pixel sensor arrangement that provides sub-sampling and reset of all pixel cells after sub-sampling. In one embodiment, logic is provided between sampled and non-sampled rows to propagate reset signals to the non-sampled rows when the sampled rows are reset. In another embodiment, reset of non-sampled rows is implemented with control logic.
Patent TW-591130-B (TW)
Title: Method and apparatus for directly forming polycrystal silicon film
Inventor: TU DAVID
IPC: H01L21/00
Filed: 2000-10-04
Granted: 2004-06-11
Abstract: A method and an apparatus for directly forming polycrystal silicon film are provided. In low pressure a silicon powder is injected to become atomized silicon liquid by a plasma spraying torch in order to directly become a polycrystal silicon film on a substrate. The method mainly comprises the steps of: placing a substrate on a pedestal in an airtight chamber, wherein the temperature of the substrate is controlled by the pedestal; controlling the pressure of the airtight chamber under 100 Torr; and plasma spraying silicon powder with high temperature plasma-forming gas onto the substrate for directly forming polycrystal silicon. Thus, that is a vacuum plasma spray (VPS) method to form a polycrystal silicon film.
Patent TW-461071-B (TW)
Title: Semiconductor device and method of producing the same
Inventor: MATSUMURA KAZUHIKO
IPC: H01L23/31
Filed: 2000-11-01
Granted: 2001-10-21
Abstract: Through holes are provided in the inner electrodes of a second semiconductor chip, electrodes capable of being plated by electroless plating are formed on the inner walls of the through holes while being insulated from other electrodes, the second semiconductor chip is secured with an adhesive to a first semiconductor chip at portions other than the outer electrodes and the inner electrodes of the first semiconductor chip so that the inner electrodes of the first semiconductor chip are aligned with the inner electrodes of the second semiconductor chip, and the inner electrodes and the electrodes on the inner walls of the through holes are electrically connected to each other by continuously extending metals having the same composition. Therefore, a plurality of chips can be stacked without being damaged.
Patent TW-480325-B (TW)
Title: Plant for liquefying natural gas
Inventor: REIJNEN DUNCAN PETER MICHAEL
IPC: F25J1/00
Filed: 2000-11-03
Granted: 2002-03-21
Abstract: Plant (1) for liquefying natural gas comprising a main heat exchanger (10) in which the natural gas (5) is liquefied by means of indirect heat exchange with evaporating refrigerant, and a refrigerant circuit (20) in which evaporated refrigerant is compressed (23a, 23b) and liquefied to produce liquid refrigerant that is used in the main heat exchanger (10), wherein the refrigerant circuit (20) includes a compressor train (23a, 23b) consisting of at least one compressor (65a-67b) driven by an electric motor (83a, 83b).
Patent TW-468241-B (TW)
Title: Method to improve adhesion of dielectric material of semiconductor
Inventor: TSAI JENG-YUAN
IPC: H01L21/768
Filed: 2000-11-14
Granted: 2001-12-11
Abstract: This invention provides a method to improve adhesion of dielectric material of semiconductor. A barrier layer is formed onto a given substrate. An adhesion promoter is deposited onto the barrier layer to form the first middle layer by using chemical vapor deposition, in which the adhesion promoter is an organic material such as methyl triacetoxy silane (MTAS). A first dielectric layer is formed onto the middle layer. The adhesion promoter is once again deposited onto the first dielectric layer to form the second middle layer by using chemical vapor deposition. An etching stop layer is formed on top of the second middle layer. The adhesion promoter is deposited onto the etching stop layer to form the third middle layer by using chemical vapor deposition. Then, a second dielectric layer is formed onto the third middle layer.
Patent TW-474120-B (TW)
Title: Improved plasma torch
Inventor: ZHU WENXIAN
IPC: B01J19/08
Filed: 2000-11-22
Granted: 2002-01-21
Abstract: A plasma arc torch is disclosed which has an elongated electrode with an open front and a nozzle with a plasma discharge opening that is coaxial with the electrode. A mounting arrangement includes a ceramic ring that engages the front end of the electrode and a gas ring which concentrically surrounds the ceramic ring. A forward portion of the gas ring, the forward end of the electrode, and the nozzle define a swirl chamber of the torch, and opposing, spaced-apart concentric cylindrical surfaces of the ceramic ring and the gas ring, respectively, form an annulus which extends rearwardly from the swirl chamber. The ceramic ring closes the aft end of the annulus, and the gas ring houses a plurality of plasma gas injection ports which are located immediately forward of the aft end of the annulus. The entire plasma gas for the torch flows from the injection ports generally tangentially into the annulus to prevent a recirculation of gas into the annulus and to impart rotation to the gas after it leaves the ports and as it propagates towards the swirl chamber. The annulus is sufficiently long so that the injected gas spirals through about 5-20 revolutions before it enters the swirl chamber as a substantially uniform, single mass gas flow.
Patent TW-I261072-B (TW)
Title: High fatigue strength steel sheet having stretch frangeability and a method for production of the same
Inventor: YOKOI TATSUO
IPC: C22C38/02
Filed: 2000-12-22
Granted: 2006-09-01
Abstract: This invention provides a high fatigue strength steel sheet having stretch frangeability and a method for producing the same. This steel sheet comprises; in terms of wt%, C: 0.01-0.2%, Si: 0.01-2%, Mn: 0.05-3%, P: <= 0.1%, S: <= 0.01%, Al: 0.005-1% and the balance consisting of Fe and unavoidable impurities, and further comprises a micro-structure comprising a dual phase structure composed of ferrite as a main phase and martensite or retained austenite as the second phase, and has an average ferrite grain diameter of more than 2 mum and less than 20 mum, and has a value of more than 0.05 and less than 0.8 which an average grain diameter of the second phase divided by an average ferrite grain diameter, and also has a carbon concentration in the second phase of more than 0.2 and less than 2%, further has a value of more than 3 and less than 12 which the volume percentage of the second phase divided by the average grain diameter of the second phase, and has a value of more than 1.5 and less than 7 which an average hardness of the second phase divided by an average hardness of the ferrite phase. This steel sheet is produced by a process comprising the steps of; finish hot rolling is carried out at a temperature of more than Ar3 transformation point and less than Ar3 transformation point + 100 DEG C, maintaining the hot rolled steel sheet in the range of a temperature more than Ar1 transformation point and less than Ar3 transformation point for 1-20 seconds, and cooling this steel sheet at a cooling rate of more than 20 DEG C/s, then coiling the cooled steel sheet.
Patent TW-I257640-B (TW)
Title: Method for forming transfer film and metal back layer, and image display device
Inventor: ITO TAKEO
IPC: H01J29/28
Filed: 2001-02-02
Granted: 2006-07-01
Abstract: A transfer film has a base film, a release agent layer formed by being superimposed on the base film in sequence, a protective film, and a metallic film. The protective film contains a softening agent such as phosphoric acid ester and aliphatic monobasic acid ester. The method for forming the metal back layer has a process of forming a phosphor layer on the inside surface of a face plate, a process for pressuring and bonding the metallic film of the transfer film, which is disposed so as to contact with a phosphor layer through a bonding layer, and a process for heat treatment of a face plate wherein the metallic film is formed. A transfer layer of the transfer film is preferably to be a high-resistance layer whose surface resistivity is from 10<2> to 10<8> Omega/□, which can increase surface resistivity of the metal back film and inhibit discharge.
Patent TW-483130-B (TW)
Title: Chip size package
Inventor: LIU JOHN
IPC: H01L23/28
Filed: 2001-03-01
Granted: 2002-04-11
Abstract: A chip size package including a chip with a plurality of contact pads on its active surface; a plurality of inner connection lines connecting the corresponding contact pad and edge bonding pad; a sealing layer sealing the inner connection lines and at least exposing one surface of each bonding pad. The exposing surface of bonding pad is vertical with the active surface of the chip for lateral surface mounting and wafer level package.
Patent TW-592024-B (TW)
Title: Logic controller having DIN rail backplane and locking means for interconnected device module
Inventor: WIELOCH CHRISTOPHER JOHN
IPC: G05B19/05
Filed: 2001-03-07
Granted: 2004-06-11
Abstract: A logic controller formed by self-contained device modules plugged onto a DIN rail and onto a backplane contained in the DIN rail, the modules variously comprising a power supply, a logic control, I/O devices and gateways, each I/O device having microprocessor power, and the modules having a sliding lock movable into position adjacent DIN-rail-engaging flexible tabs to block deflection of the tabs and removal of the module from the DIN rail.
Patent TW-504709-B (TW)
Title: Semiconductor storage device, control device, and electronic apparatus
Inventor: SUMITANI KEN
IPC: G06F21/79
Filed: 2001-04-09
Granted: 2002-10-01
Abstract: A semiconductor storage device including: a memory having a memory space, a plurality of addresses of the memory space each having data stored therein; and a security circuit for controlling a security function which activates or deactivates at least a part of the memory space according to whether, in the case where an address input to the security circuit matches at least one key-address included in the security circuit, data stored in the address in the memory space is manipulated under a condition equal to a predetermined condition or under a condition not equal to the predetermined condition.
Patent TW-539829-B (TW)
Title: Processing method for high-temperature exhaust gas
Inventor: TATEISHI MASATAKA
IPC: B01D47/06
Filed: 2001-05-11
Granted: 2003-07-01
Abstract: The object of the present invention is to effectively separate and recover solid dust and volatile or molten components while preventing solid dust and volatile or molten component dust from being adhered to inner walls of a temperature control tower. The solution of the present invention is that the high-temperature exhaust gas is blown from a gas blowing port 2a above a temperature control tower 2 through an exhaust gas inlet duct 3, cooling water is sprayed obliquely downward toward the substantially center of a gas flow of the high-temperature exhaust gas from cooling water spray nozzles 5, cooling gas is injected so as to be a downward whirling gas flow along the inner walls of the temperature control tower 2 from first stage cooling gas injection nozzles 6 and second stage cooling gas injection nozzles 7 therebelow, and lowering a temperature of the high-temperature exhaust gas while preventing solid dust and volatile or molten components from being adhered to the inner walls of the temperature control tower, whereby the volatile or molten components are solidified into volatile or molten component dust, the solid dust is discharged and recovered from the bottom of the temperature control tower 2, and the volatile or molten component dust is recovered by a bag filter 10 provided downstream of a lower discharge duct 4.
Patent TW-508919-B (TW)
Title: Full spectrum optical communication system and methods thereof
Inventor: CHAN WEE-PIAK
IPC: H04J14/02
Filed: 2001-05-16
Granted: 2002-11-01
Abstract: An optical communication system (10), a method (100) for parallel modulation of an optical spectrum and a method (200) for parallel demodulation of the optical spectrum of modulated optical frequencies by the system (10) are described. The optical frequencies are provided in parallel to a modulation section (14) for modulating with data bits from a data signal source (16). The data bits are associated with an optical modulator (58) that controls passage of the optical spectrum at a plurality of predetermined optical frequencies based upon the data bits. The optical frequencies of the optical spectrum, modulated by the data bits, are then transmitted via a communication section (18) to an optical receiver (20) that is coupled to a demodulation section (22) of the system (10). Modulated optical frequencies are received as a modulated optical spectrum and demodulated in parallel by an optical demodulator (92) to derive the data bits.
Patent TW-523809-B (TW)
Title: Monolithic optical system and process for fabricating same
Inventor: FOLEY BARBARA M
IPC: G02B6/12
Filed: 2001-07-18
Granted: 2003-03-11
Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical structures, including optical sources such as light emitting diodes or lasers and photodetectors such as photodiodes may be formed in the high quality epitaxial compound semiconductor material while wave guides having refractive and reflective capabilities are formed in the oxide layers underlying the high quality epitaxial compound semiconductor material. These optical structures are monolithically coupled to one another to form monolithic optical systems.
Patent TW-518536-B (TW)
Title: Plasma display panel and its driving method
Inventor: KANAZAWA YOSHIKAZU
IPC: G09G3/288
Filed: 2001-07-31
Granted: 2003-01-21
Abstract: A discharge is initiated in a cell in which an address discharge is conducted at a first timing T1 in a charge adjustment period. Next, at a second timing T2, a discharge is initiated for adjusting a wall charge in a cell where a charge remains therein because the address discharge does not occurred. Thus, some negative charges are formed in an X electrode and a Y electrode, thus preventing a false discharge from occurring in an unselected cell.
Patent TW-538277-B (TW)
Title: Liquid crystal display device
Inventor: LEE JEOUNG-GWEN
IPC: G02F1/1335
Filed: 2001-09-19
Granted: 2003-06-21
Abstract: Disclosed is a liquid crystal display device of which total size and weight can be minimized. The liquid crystal display device has a light generating unit for generating a light. A light guiding plate guides the light to a display unit for displaying an image. A reflection plate is disposed under the light guiding plate for reflecting the light to the light guiding plate. A receiving container receives the reflection plate, the light guiding plate and the light generating unit. At least one boss is formed on a bottom of the receiving container for preventing the light generating unit from being moved by guiding a position of the light generating unit. Accordingly, the number of the parts installed in the liquid crystal display device can be reduced, and the manufacturing cost can be decreased because the manufacturing process becomes simple in comparison with the liquid crystal display device including a separate lamp cover.
Patent TW-533399-B (TW)
Title: Liquid crystal display and method for driving thereof
Inventor: MOON SEUNG-HWAM
IPC: G09G3/20
Filed: 2001-10-22
Granted: 2003-05-21
Abstract: A liquid crystal display apparatus provided with a darkness level adjustment function capable of increasing the distinguishability in between the levels of darkness gradation and its driving method are disclosed in the present invention. According to the invention, the voltage variation part changes a power source voltage level to output a voltage applied to the liquid crystal based on a gate ON voltage and the control signal of darkness level adjustment. The gradation voltage generation part receives the voltage applied to the liquid crystal and outputs plural gradation voltages. The gate driver outputs the scan signal for the main scan line of a liquid crystal panel. The data driver outputs the data signal responding to the gradation level for the data line of liquid crystal panel according to the image information and the gradation voltage. In the same way, the common electrode voltage generation part receives the voltage applied to the liquid crystal and outputs the common electrode voltage to the common electrode line of the liquid crystal panel in accordance with the darkness level adjustment such that image darkness can be adjusted automatically by the voltage applied to the liquid crystal depending on the periphery brightness. Depending on the adjustment operated by the user, image darkness is adjusted by changing manually the voltage applied to the liquid crystal. Moreover, darkness level is adjusted automatically depending on the state of display tableau.
Patent TW-I223485-B (TW)
Title: Compact fused disconnect switch
Inventor: SCOGGIN B HEATH
IPC: H01H85/56
Filed: 2001-10-24
Granted: 2004-11-01
Abstract: A fused disconnect switch includes at least one switch housing assembly having a housing defining a fuse receptacle and first and second terminal contact assemblies extending therefrom. At least one of the first and second contact assemblies is a bullet contact assembly, and a retractable fuse is received within the fuse receptacle. The fuse includes a primary fuse link and an open fuse indication device.
Patent TW-534949-B (TW)
Title: Minimum fuel flow schedule adjustment method for turbine engine control
Inventor: VHORA MOHAMAD HANIF
IPC: F02C9/26
Filed: 2001-10-30
Granted: 2003-06-01
Abstract: A control and method is provided that continuously adjusts minimum fuel flow schedules in the electronic control unit of a gas turbine engine. The control and method includes the steps of generating a fuel command signal; a sensed fuel flow signal and a minimum fuel flow schedule. The minimum fuel flow schedule is then multiplied by the ratio of the fuel command signal to the sensed fuel flow signal to provide an adjusted minimum fuel flow schedule.
Patent TW-527545-B (TW)
Title: A method and system for software and hardware multiplicity
Inventor: GINGERICH GREGORY L
IPC: G06F9/445
Filed: 2001-11-27
Granted: 2003-04-11
Abstract: Methods for creating a scalable, fault tolerant computing platform on a network, said platform comprising a plurality of nodes are disclosed. The method comprises initiating melding during initialization, wherein during said melding said plurality of nodes are treated as a collection and each node from said plurality of nodes joins said collection, and during melding at least a first object router is assigned; migrating objects between said plurality of nodes; and replicating objects across said plurality of nodes. Systems similar to the disclosed methods are also disclosed. Computer program products implementing the methods are also disclosed.
Patent TW-I289146-B (TW)
Title: Single liquid, vapor hardening type epoxy resin composition
Inventor: ENDO TAKESHI
IPC: C08G59/40
Filed: 2001-12-17
Granted: 2007-11-01
Abstract: The invention is to provide a one-pack moisture-curable epoxy resin composition having excellent storage stability and excellent quick curability remarkably high in the onset of initial adhesion strength and mechanical strength which are performances in contradiction thereto, and curable at normal temperatures. The one-pack moisture curable epoxy resin composition which comprises a ketimine compound represented by a chemical formula (2) which is synthesized from a carbonyl compound represented by a chemical formula (1) in which two same or different alkyl groups each having 2 to 6 carbon atoms are bonded to a carbonyl group and an amine compound having at least one primary amino group in a molecule, and an epoxy resin, wherein R1 is an alkyl group having 2 to 6 carbon atoms, and R2 is an alkyl group having 2 to 6 carbon atoms, wherein R3 is an organic group, R4 is an alkyl group having 2 to 6 carbon atoms, R5 is an alkyl group having 2 to 6 carbon atoms, and n is an integer of 1 or more.
Patent TW-522621-B (TW)
Title: Anti-thunder or lightning strike detection device of electric apparatus
Inventor: HU LUNG-JIANG
IPC: H01T4/00
Filed: 2001-12-21
Granted: 2003-03-01
Abstract: The present invention provides an anti-thunder or lightning strike detection device of electric apparatus, which is connected to a master power switch of an electric apparatus. The anti-thunder device of the electric apparatus includes: more than two capacitors and a grounding body. The capacitors are connected to the output side of the electric apparatus or the master power switch of the electric apparatus. One terminal of the grounding body is connected to the other terminals of the capacitors. The other terminal of the grounding body is buried into the ground, so that the high energy generated by thunder is directly discharged into the ground. The lightning strike detection device of the electric apparatus includes: a measurement meter connected to the output side of the electric apparatus or the master power switch of the electric apparatus, a display unit capable of displaying the detection result of grounding voltage at the instance of lighting strike, and a circuit unit connected between the measurement meter and the display unit.