baber/WOPTO huggingface dataset:
Patent JP-S5634241-A (JP)
Title: Receiving unit
Inventor: OSAKABE YOSHIO
IPC: H03J7/02
Filed: 1979-08-30
Abstract: PURPOSE:To prevent distortion of the sound output signal from being generated even for detuning of a TV tuner, by providing a fine tuning means in the TV tuner and by controlling the carrier wave, which is supplied to the sound intermediate frequency, by the discrimination output of the second sound intermediate frequency. CONSTITUTION:AFT switch 19 related to TV tuner 4 is provided, and supply of the AFT voltage is broken by this switch to perform fine tuning manually. The carrier wave supplied to mixer 13 which converts a signal to the second sound intermediate frequency is supplied from variable frequency oscillator 20. Oscillator 20 is controlled by the frequency discrimination output AFC signal of FM detector 16. As a result, even if the tuning state of tuner 4 is set to detuning consciously to obtain a picture easy to see by TV receiver 5, generation of distortion of the sound output can be prevented because the sound intermediate frequency signal from  mixer 13 is controlled to a regular frequency automatically.
Patent JP-S603841-A (JP)
Title: Electromagnetic focus-type camera tube device
Inventor: KIUCHI YUUJI
IPC: H01J31/28
Filed: 1983-06-22
Abstract: PURPOSE:To improve shading characteristics and resolution characteristics by allowing an electron beam to enter vertically to a photosensitive layer. CONSTITUTION:A deflection control unit 20 is constituted with two pairs of electromagnetic deflection scanning units, i.e., electromagnetic deflection coils 21, 22, and both coils are installed on the tube axis apart from each other so that the center separation (1) between them is about one half of a loop length of an electron beam formed by electromagnetic focusing. According to such a camera tube device, an electron beam is applied with a deflection force F1 and deflected by the deflection magnetic field from the first deflection coil 21 on the electron gun side then is applied with a deflection force F2 by the second deflection coil. The deflection force F2 by the second deflection coil 22 on the photosensitive layer side acts in the direction to offset the former deflection force F1 because the separation (1) between both coils corresponds to one half of a loop length of the electron beam, thus changing the beam to a direction parallel to the tube axis. Thereby, the angle of incidence of the electron beam to the photosensitive layer can be made zero, thus allowing vertical incidence.
Patent JP-2000306352-A (JP)
Title: Magnetic disk cartridge
Inventor: KATO SHINICHI
IPC: G11B33/14
Filed: 1999-04-19
Abstract: PROBLEM TO BE SOLVED: To suppress the generation of a damage to media and drop outs, and enhance the reliability by removing dust from the vicinity of magnetic disk media. SOLUTION: When a magnetic disk medium 4 is accommodated rotatably in a case C obtained by joining an upper shell 1 and a lower shell 2 and, liners 5 and 6 are fixed to inner faces of the upper and lower shells 1 and 2, an exhaust hole 13 for communicating a medium accommodation part and the outside air is opened to outer peripheral wall parts 1a and 2a of a part away from magnetic head insertion openings 10 and 11, and filter parts 5a and 6b are set to the exhaust hole 13 by extending part of the liners 5 and 6.
Patent JP-H01281755-A (JP)
Title: Semiconductor device
Inventor: KONDO TOSHIHIKO
IPC: H01L21/3205
Filed: 1988-05-07
Abstract: PURPOSE:To prevent initial failure due to gate breakdown voltage by connecting a first wiring layer on an element isolation insulting film to a semiconductor substrate through a metal or a metal silicide film or a metal nitride film. CONSTITUTION:A P-type region 1 and a gate oxide film 2 which are formed on a P-type or an N-type substrate are composed of: an element isolation oxide film 3; polycrystalline silicon films 4 containing phosphorus, a film of a metal of Mo, W, Ti, and so on or of a silicide of one of the metals; side walls 7 having an LDD structure; an N<+>-type diffusion layer 8 of a source/drain region; an opening 8 between the substrate and a first wiring layer consisting of polycrystalline silicon and metal or a silicide film 5; the metals of Wo, W, Ti and the like or a silicide or a nitride film 13 of the above metals which connect the first wiring layer to the substrate. In other words, the connection between the first wiring layer located on the element isolation insulating film and the substrate 1 is performed by means of the metals or the metal silicide film or the metal nitride film 13 through an opening 9. This structure lessens initial failure in this way.
Patent JP-H05305595-A (JP)
Title: Safety device for entrance into robot operating area
Inventor: NISHIHATA HITOSHI
IPC: B25J19/06
Filed: 1992-04-30
Abstract: PURPOSE:To ensure the safety related to robot operation by providing a lock means for restricting the arm top end part of a robot to a base when the robot is in the stopped state, and providing a detecting means of robot operating area entrance when the robot is in the operated state. CONSTITUTION:When a robot is laid in the stopped state, the top end part of a robot arm 5 is mechanically restricted to a base 6 by a lock means 2 to keep the safety to the reckless driving of the robot. Further, during the operation of the robot, the entrance into the robot operating area is monitored by a detecting means 3 of robot operating area entrance, and when the entrance into the robot operating area is detected, the operating source of the robot is interrupted to urgently stop the robot without reserve.
Patent JP-S5811927-A (JP)
Title: Snapshotting device for x-ray photographing device
Inventor: NAKAMURA HITOSHI
IPC: G03B42/02
Filed: 1981-07-16
Abstract: PURPOSE:To stop the titled device on a fixed photographing position even if travelling resistance is changed by deciding analog switches to be turned on in accordance with the changing status of the travelling resistance such as the change of moving directions against the gravity of a film holder. CONSTITUTION:If gain is fixed (only analog switches 9-12 are always turned on) when travelling resistance is extremely small, e.g. a film holder is moved to the direction of its gravity, the film holder operates as shown by alternate long and short dash lines in the drawing and exceeds an objective stop position. In such a case, the holder can be stopped on the objective position by turning on the analog switches 9-11 and moving the holder so that returning resistance is reduced to reduce the gain.
Patent JP-H06299212-A (JP)
Title: Production of oxidation resistant palladium powder
Inventor: ISHIWATARI MASAHARU
IPC: B22F9/24
Filed: 1993-04-14
Abstract: PURPOSE:To produce an oxidation resistant palladium powder by adding a nonionic surfactant at the time of adding the reducing agent in the production of the metallic palladium powder which is performed by reducing palladium ion in its solution. CONSTITUTION:The palladium powder is produced by adding a nonionic surfactant to a solution contg. palladium ion, thereafter adding a reducing agent to precipitate metallic palladium, separating the solid material from the liquid phase, washing the recovered solid material with water and then drying the material to produce the objective palladium powder. The palladium powder thus produced is hardly oxidized and shows only a little volume change even at the time of sintering it at a high temp. Further the palladium powder, the particle size and shape of which are controllable by adding the nonionic surfactant and which has such an extent of oxidation resistance as not to cause breakage of the electrode, etc., at the time of using the palladium powder as the electrode material, can be produced easily and in a high yield.
Patent JP-H01280384-A (JP)
Title: Electromagnetic conversion semiconductor device
Inventor: MIYASHITA YOSHIYUKI
IPC: H01L43/06
Filed: 1988-05-06
Abstract: PURPOSE:To eliminate that a characteristic is affected, as a whole semiconductor device, by a temperature characteristic of an electromagnetic transducer by a method wherein the electromagnetic transducer and a resistance formed of a diffusion layer identical to that of the transducer are provided as constitutive elements of a peripheral circuit. CONSTITUTION:An electromagnetic transducer 1 and resistances 21 formed of a diffusion layer identical to that of the transducer 1 are provided as constitutive elements of a peripheral circuit. For example, an electromagnetic conversion semiconductor device is constituted of an electromagnetic transducer 1, a differential amplification circuit 2 and an output circuity the differential amplification circuit 2 is constituted of NPN transistors 23, resistances 22, 24, a constant- current source 25 and resistances 21 by an epitaxial layer identical to that of the electromagnetic transducer 1. By this setup, a change in an output voltage of the electromagnetic transducer 1 due to a temperature can be offset by the differential amplification circuit 2. Accordingly, when the output circuit 3 is constituted in such a way that a characteristic is not changed due to the temperature, the whole semiconductor device can be formed in such a way that it is not effected due to the temperature.
Patent JP-S5337010-A (JP)
Title: Magnetic tape transfer device
Inventor: OZAWA KUNIKAZU
IPC: G11B5/86
Filed: 1976-09-16
Abstract: PURPOSE:Slip demagnetizing is reduced and the improvement in transfer characteristics is achieved by spacing the separating point position of both master and slave tapes and substantially eliminating the tension variation of the tape positioned inward.
Patent JP-H04341542-A (JP)
Title: Steel in which form of inclusion is regulated
Inventor: YANAGIYA TOSHIO
IPC: C22C38/00
Filed: 1991-05-16
Abstract: PURPOSE:To offer a steel excellent in aging crack resistance on the cutting face after shear cutting by specifying the content of N in the steel. CONSTITUTION:The form of inclusions in a steel is regulated by the addition of Ca. The content of N in the steel is regulated, by weight, to <=0.005%. Furthermore, the content of Al is regulated to <=0.002%. The componental compsn. of the steel in which the form of inclusions is regulated is formed of a one constituted of 0.30 to 0.50% C, <=0.50% Si, 0.50 to 1.50% Mn, 0.001 to 0.01% Ca, <=0.005% N, <=0.002% Al and the balance Fe. Moreover, this steel is incorporated with one or two kinds of 0.05 to 0.40% Pb and 0.03 to 0.10% S. In this way, the steel excellent in machinability as well as aging crack resistance can be obtained.
Patent JP-H05305640-A (JP)
Title: Kneading and injection molding method of composite resin and device thereof
Inventor: YAMAOKA KISHIHIRO
IPC: B29C45/54
Filed: 1992-04-30
Abstract: PURPOSE:To make the uniform and efficient kneading of functional powder and synthetic resin possible. CONSTITUTION:In the kneading and injection molding method concerned, with which the predetermined shaped composite material is obtained by kneading functional powder and synthetic resin as binder added to it and, after that, injecting, the mixture of the powder and the synthetic resin is kneaded under heat with a screw cylinder type kneader 2 so as to feed the resultant thermally kneaded matter as it is thermally melted to a separately provided injection machine 3 in order to inject the kneaded matter under the state being deaerated and metered with the injection machine from a nozzle 35 in a mold.
Patent JP-S5235179-A (JP)
Title: Recovering method of organic solvent
Inventor: NISHIMURA YAMAJI
IPC: B01D65/08
Filed: 1975-09-12
Abstract: PURPOSE: Recovering method of organic solvent, preventing the seconday environmental pollution, by containing minutely resolved organic solvent in the treating solution or recovering solution. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-H02289649-A (JP)
Title: Silicone rubber composition
Inventor: FUKUDA TAKESHI
IPC: C08L83/04
Filed: 1989-04-28
Abstract: PURPOSE:To obtain a silicone rubber composition suitable as key board material, etc., having characteristics Such as heat resistance and freeze resistance, extremely improved dynamic fatigue durability by blending organopolysiloxane with a specific amount of a precipitated silica-based filler having specific average particle diameter of secondary particles. CONSTITUTION:(A) 100 pts.wt. organopolysiloxane shown by the formula [R is (substituted) monofunctional hydrocarbon; a is 1.95-2.04] having >=100 polymerization degree is blended with (B) 5-80 pts.wt. precipitated silica-based filler having >=100m<2>/g specific surface area and <=5mum average particle diameter of secondary particles and (C) a curing agent (e.g. benzoyl peroxide) in a sufficient amount to cure the component A.
Patent JP-S61269225-A (JP)
Title: Magnetic recording medium
Inventor: KUBOTA YUICHI
IPC: C09D5/23
Filed: 1985-05-24
Abstract: PURPOSE:To provide a magnetic recording medium having high durability and large hardness of the coated film and good surface smoothness by incorporating particles of which the surface consists of iron carbide as magnetic particles into said medium. CONSTITUTION:The magnetic particles contain the particles of which at least the surface consists of the iron carbide. Such magnetic particles are obtd. by mixing an iron cyanide compd. with sulfate, sulfite or sulfide, putting the mixture into a reactor made of iron and reducing the same under heating while introducing CO into the reactor then cooling the mixture. The formed iron carbide particles have >=2, more particularly 2-3 n in FenC. The presence of a concn. gradient in the particles is of no problem and C is not always required to exist over the entire region but the iron carbide occupies preferably 10-100wt% of the entire part of the magnetic particles.
Patent JP-H1056015-A (JP)
Title: Semiconductor device for photomask for forming metal wiring of semiconductor element and formation thereof
Inventor: HO YON CHIYORU
IPC: G03F1/80
Filed: 1997-04-28
Abstract: PROBLEM TO BE SOLVED: To control the current induced in plasma and to prevent the deterioration of an element by excessive etching, by the method wherein a metal wiring includes a basic metal pattern and a dummy metal pattern, and the interval between the basic metal pattern and the dummy metal pattern is maintained at the specified interval. SOLUTION: A basic metal pattern 41 and a dummy metal pattern 43, wherein the negative and positive patterns are inverted for an expanded metal pattern 42 in which the pattern 41 is expanded to a specified dimensions, are synthesized. At this time, the fact that the interval between the respective metal patterns 41 and 43 is kept constant is known. When the design is performed so that the interval between the metal patterns at each place of a semiconductor device is constant, in this way the deterioration of the element caused by the excessive etching can be prevented. Furthermore, the current induced by plasma can be reduced at the metal wiring. Therefore, it is not necessary to form other junctions and contacts for the current control, and the complicated process is not required.
Patent JP-S62267548-A (JP)
Title: Manufacture of 2-layer cylinder liner
Inventor: IWAMOTO KEIICHI
IPC: F16J10/04
Filed: 1986-05-15
Abstract: PURPOSE:To increase strength of a liner and to reduce the weight thereof, by a method wherein alloy powder is sprayed against the inner peripheral surface of a cylindrical outer layer for diffusion to form an inner layer, and finish processing is applied on the outer surfaces of the inner and the outer layer to manufacture a cylinder liner. CONSTITUTION:Alloy powder is sprayed against the inner peripheral surface of an outer layer 1 formed by centrifugal-casting a steel to form a diffusion inner layer 2. Machining is applied on inner and outer surfaces 10a and 10b so as to have a given size to complete a two-layer cylinder liner 10. This constitution decreases the thickness and the weight of the liner, and since the inner layer forms a diffusion layer, enables reduction of production of flaw at a boundary between the layers.
Patent JP-S63277225-A (JP)
Title: Method for kneading resin composition
Inventor: TAKIGAWA YUKIO
IPC: C08G59/18
Filed: 1987-05-08
Abstract: PURPOSE:To obtain a resin composition reduced in the occurrence of stress, by subjecting other materials excluding an inorganic filler and curing accelerator in a sealing resin composition to preliminary kneading and then pulverization, adding the filler and curing accelerator thereto and kneading the blend. CONSTITUTION:Other all components excluding (A) inorganic filler and (B) curing accelerator in a sealing resin composition are preliminarily kneaded preferably according to the softening point of the resin and after the knead is pulverized, the components A and B are added thereto and the blend is kneaded again to provide the aimed composition.
Patent JP-H04341516-A (JP)
Title: Production of cu-added steel excellent in toughness at low temperature in weld zone
Inventor: IKI HIROSHI
IPC: C22C38/00
Filed: 1991-05-16
Abstract: PURPOSE:To provide a Cu-added steel excellent in weldability as well as in toughness at low temp. and having superior toughness at low temp. in weld zone. CONSTITUTION:A slab of a steel having a steel composition consisting of, by weight, 0.01-0.12% C, 0.6-2.0% Mn, 0.5-1.5% Cu, 0.5-2.0% Ni, and the balance Fe with inevitable impurities is hot-rolled and air-cooled down to room temp., and further, strain is applied at >=3% reduction of area. By this method, the steel having SM570 specification can be obtained even if subjected to tempering at a temp. in a temp. region as low as 200-<300 deg.C.
Patent JP-S60254779-A (JP)
Title: Manufacture of light conducting film for photoelectric conversion element
Inventor: MASUDA SHIGERU
IPC: H01L31/0248
Filed: 1984-05-31
Abstract: PURPOSE:To suppress the crystallization of a light conducting film and make it possible to realize high resolution, by forming a thin film of Al and the like on a compound semiconductor film of a II-VI group such as CdSe, thereafter adopting a process, in which heat treatment is performed. CONSTITUTION:A CdSe film 2 is formed on a substrate 1 of ceramics and the like at first by evaporation to a thickness of about 1mum. On the film 2, an Al thin film 3 is formed to a thickness of about 70Angstrom  by evaporation. Thereafter the heat treatment of the device is performed in a nitride atmosphere including, e.g., 20ppm of oxygen, for 1h at 650 deg.C like a conventional method. By adopting the process like this, crystallization of the CdSe film due to the heat treatment, which has been a problem in the conventional method, can be suppressed. A light conducting film, whose crystal grain is 1mum or less, is obtained. Abnormal crowth of crystal, which causes the instability in characteristics, can be suppressed accordingly. In this case, when the thickness of the Al film is too thick, a thick Al2O3 layer and a thick Al layer are formed on the surface and the photoelectric characteristics are impaired. Therefore, it is especially recommended that the thickness of the Al film after evaporation is 30Angstrom -150Angstrom .
Patent JP-S5814562-A (JP)
Title: Semiconductor device
Inventor: KOIKE HIDEJI
IPC: H01L27/092
Filed: 1981-07-17
Abstract: PURPOSE:To prevent breakdown or malfunctioning caused by an abnormal input, positive or negative, by a method wherein the input terminal of a CMOS inverter constituted of a P channel transistor and an N channel transistor is connected to a serially connected two N channel transistors which in turn are grounded. CONSTITUTION:An input terminal 31 is connected via a protecting resistor 32 to the input terminal of a CMOS inverter consisting of a P channel transistor 33 and an N channel transistor 34, with the output yielded at the inverter output terminal 37. In this construction, the input terminal 31 is grounded via a protecting resistor 32 and input protecting, serially connected N channel transistors 35  and 36. The gate of the transistor 35 is connected to its source and the source is connected to the drain of the transistor 36. The source of the transistor 36 is grounded and its gate is connected to the drain. This ensures protection for the CMOS inverter.
Patent JP-H05276804-A (JP)
Title: Sowing by seed string method capable of simultaneous fertilization and equipment therefor
IPC: A01C7/06
Filed: 1992-04-03
Abstract: PURPOSE:To provide the subject method for sowing by the seed string method while simultaneously applying fertilizers and to provide the subject equipment therefor. CONSTITUTION:This equipment involves a body frame 15 moving in the field by pulling or pushing, a plow 8, a fertilizer hopper 5, a first soil-covering unit 9, a seed-string feeder composed of a seed-string reel 7 and a guide unit and a second soil-covering unit 10. The plow 8 makes furrows having a prescribed depth in the field as the body frame 15 moves forward. The fertilizer hopper 5 has a hole behind the plow 8 so as to intermittently or continuously drop fertilizers into the bottom of the furrows as the body frame 15 moves forward. The first soil-covering unit 9 is attached in the neighborhood of the above-mentioned hole at the rear part so as to carry out the first soil covering of a prescribed thickness on the fertilizers as the body frame 15 moves forward. The guide unit of the above-mentioned seed-string feeder guides the seed-string 2 onto the first covering soil and to feed the seed-string 2 onto the first covering soil as the body frame 15 moves forward. The second soil-covering unit 10 carries out soil covering onto the seed-string 2 as the body frame 15 moves forward.
Patent JP-S63277337-A (JP)
Inventor: IMAI ATSUSHI
IPC: E04B1/343
Filed: 1987-05-08
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H01282566-A (JP)
Title: Liquid developer for electrostatic photography
Inventor: KATO EIICHI
IPC: G03G9/13
Filed: 1988-05-09
Abstract: PURPOSE:To improve redispersibility and stability by bringing a soln. contg. a dispersion stabilizing resin in which a monofunctional monomer to be made insoluble in a nonaq. solvent by polymn. and a polymer contg. a specific repeating unit are copolymerized at the terminal of the main chain thereof into polymn. reaction. CONSTITUTION:The soln. contg. the dispersion stabilizing resin of the constitution in which one kind of the monofunctional monomer to be made insoluble with the nonaq. solvent by polymn. of the dispersion resin particles and the polymer contg. the repeating unit specified by the formula I make the polymerizable double bonds copolymerizable with the monofunctional monomer only at one terminal thereof is brought into the polymn. reaction. In the formula I, X denotes -COO-, -OCO-, -CH2OCO-, -CH2COO-, -O- or -SO2-. Y denotes an aliphat. group of 6-32C; a1 and a2 may be the same as or different from each other and respectively denote a hydrogen atom, halogen atom, cyano group, hydrocarbon group of 1-8C, -COO-Z or -COO-Z via a hydrocarbon group of 1-8C. The redispersibility and stability are thus improved.
Patent JP-H04320062-A (JP)
Title: Semiconductor integrated circuit device
Inventor: IMAMURA KENICHI
IPC: H01L29/45
Filed: 1991-04-18
Abstract: PURPOSE:To commonly provide manufacturing steps of electrodes and circuit resistors, to reduce the number of steps and to improve yield by using an electric resistance material layer made of metal silicide such as WSi, TiSi, etc., its nitride or alloy such as NiCr, etc., shared for a gate electrode and the resistors. CONSTITUTION:Si is ion implanted only in a channel of a MESFET on a semi- insulating GaAs substrate 1, and annealed to form an-type layer 2. Then, a WSiN layer 3 is formed on the entire surface, and resist films 4, 4 are formed on a gate electrode and a load resistor. With the films 4, 4 as masks the exposed layer 3 is removed. In this step, a gate electrode 5 and a load resistor 6 are simultaneously formed. Since a current flowing to the gate electrode is very small, the electric resistance does not disturb an operation of a device, and since Au is adhered on the electrode 5 at the time of connecting wirings, there is no problem.
Patent JP-S5814743-A (JP)
Inventor: HIKITA MASANORI
IPC: B65B25/06
Filed: 1981-07-20
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。