Patent SG-11201806030S-A (SG)
Title: Fabrication of a device on a carrier substrate
Inventor: LEE KWANG HONG
IPC: H01L21/70
Filed: 2017-01-20
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/127026 Al 27 July 2017 (27.07.2017) WIPO I PCT 111111111111110111010101111101011111011101110101110110101111111111111111110111111 (51) International Patent Classification: H01L 21/02 (2006.01) HO1L 21/70 (2006.01) (21) International Application Number: PCT/SG2017/050032 (22) International Filing Date: 20 January 2017 (20.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/280,861 20 January 2016 (20.01.2016) US (71) Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US/US]; 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (US). NATIONAL UNIVERSITY OF SINGAPORE [SG/SG]; 21 Lower Kent Ridge Road, Singapore 119077 (SG). NANYANG TECHNOLOGICAL UNIVERSITY [SG/SG]; 50 Nan- yang Avenue, Singapore 639798 (SG). (72) Inventors: LEE, Kwang Hong; c/o Singapore-MIT Alli- ance for Research and Technology Centre, 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (SG). ZHANG, Li; c/o Singapore-MIT Alliance for Research and Technology Centre, 1 CREATE Way, #10-01 CRE- ATE Tower, Singapore 138602 (SG). CHUA, Soo Jin; c/o National University of Singapore, Faculty of Engineering, Department of Electrical & Computer Engineering, 21 Lower Kent Ridge Road, Singapore 119077 (SG). LEE, Eng Kian, Kenneth; c/o Singapore-MIT Alliance for Re- search and Technology Centre, 1 CREATE Way, #10-01 [Continued on next page] (54) Title: FABRICATION OF A DEVICE ON A CARRIER SUBSTRATE (57) : A method of fabricating a device on a carrier sub - strate, and a device on a carrier substrate. The method comprises providing a first substrate; forming one or more device layers on the first substrate; bonding a second substrate to the device layers on a side thereof opposite to the first substrate; and removing the first substrate. 602 604 606 providing a first substrate X forming one or more device layers on the first substrate --/- bonding a second substrate to the device layers on a side thereof opposite to the first substrate --/- removing the first substrate 608 W O 20 17 / 127 0 26 Al 600 Figure 6 WO 2017/127026 Al 1#11101MOMMIONEDIDEMOMOHMEMONIMOVOIMIE CREATE Tower, Singapore 138602 (SG). FITZGER- ALD, Eugene A.; c/o Massachusetts Institute of Techno- logy, 77 Massachusetts Avenue, Cambridge, Massachu- setts 02139 (US). TAN, Chuan Seng; c/o Nanyang Tech- nological University, 50 Nanyang Avenue, Singapore 639798 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; P.O Box 1088, Rochor Post Office, Rochor Road, Singa- pore 911833 (SG). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3))