Patent SG-11201806451V-A (SG)
Title: Method and system for forming memory fin patterns
Inventor: KANG HOYOUNG
IPC: H01L21/768
Filed: 2017-01-26
Abstract: WO 17 / 13 238 1 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/132381 Al 3 August 2017 (03.08.2017) WIPO I PCT 111111111111110111011111111111010111110111111110111111110111H 011111111111110111111 (51) International Patent Classification: HO1L 21/027 (2006.01) G03F 7/00 (2006.01) HO1L 21/768 (2006.01) HO1L 21/3213 (2006.01) (21) International Application Number: PCT/US2017/015136 (22) International Filing Date: 26 January 2017 (26.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/288,846 29 January 2016 (29.01.2016) US (71) Applicant: TOKYO ELECTRON LIMITED [JP/JP]; Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325 (JP). (71) Applicant (for JP only): TOKYO ELECTRON U.S. HOLDINGS, INC. [US/US]; 2400 Grove Boulevard, Aus- tin, Texas 78741 (US). (72) Inventor: KANG, Hoyoung; 200 Wilkins Ln., Guilder- land, New York 12303 (US). (74) Agent: MATHER, Joshua D.; Tokyo Electron U.S. Hold- ings, Inc., 2400 Grove Boulevard, Austin, Texas 78741 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) (54) Title: METHOD AND SYSTEM FOR FORMING MEMORY FIN PATTERNS (57) : Techniques disclosed herein, provide a method and fabrication structure for accurately increasing feature density for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts or blocks where specified. A multiline layer is formed of three or more different materials that provide differing etch characteristics. Etch masks, including interwoven etch masks, are used to selectively etch cuts within selected, exposed materials. Structures can then be cut and formed. Forming structures and cuts can be recorded in a memorization layer, which can also be used as an etch mask.