baber/WOPTO huggingface dataset:
Patent TW-494477-B (TW)
Title: Thermal processing system and thermal processing method
Inventor: LI YICHENG
IPC: H01L21/68
Filed: 2001-04-19
Granted: 2002-07-11
Abstract: A thermal processing system according to the present invention heats a to-be-processed object while rotating the to-be-processed object by a placement part, and performs thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber. This system includes: an outer ring part provided outside of the processing chamber, and having a plurality of magnetic poles arranged circumferentially; an inner ring part provided inside of the processing chamber, having a plurality of magnetic poles arranged circumferentially for applying magnetic forces between the magnetic poles of the outer ring part and those of the inner ring part so as to follow the outer ring part and rotate therewith; a bearing part provided between the inner ring part and processing chamber; and the placement part rotating together with the inner ring part in the processing chamber, wherein the number of the magnetic poles of the outer ring part and inner ring part is determined such that a torque transmitted to the inner ring part from the outer ring part is larger than a friction torque generated by the bearing part when the outer ring part is rotated for a required allowable angular error in orientation of the inner ring part with respect to the outer ring part.
Patent TW-564406-B (TW)
Title: Microactuator device with a countermeasure for particles on a cut face thereof
Inventor: KURANO MASAYUKI
IPC: G11B5/55
Filed: 2001-08-03
Granted: 2003-12-01
Abstract: In a microactuator device (2) having a cut face formed by cutting or splitting, the cut face is subjected to anti-release treatment for preventing release of particles produced by cutting. The microactuator device may has a multilayer structure including a plurality of piezoelectric ceramics elements and a plurality of internal electrodes alternately laminated. In this case, the multilayer structure has the above-mentioned cut face. It is preferable that the microactuator device is mounted between a base plate (3) to be fixed and a support spring (5) for supporting a head (4), wherein the microactuator device and portions of the base plate and the support spring which are adjacent to the microactuator device are collectively coated with a coating film.
Patent TW-479100-B (TW)
Title: Light brick structure and manufacture method thereof
Inventor: FAN MEI-WAN
IPC: E04C1/40
Filed: 2001-08-17
Granted: 2002-03-11
Abstract: This invention provides a structure of light brick and manufacture method thereof. The light brick structure consists of a surface layer made of concrete and a bottom layer made of concrete of light aggregate. The light brick manufacture method includes procedures: (1) to mix respectively the bottom layer material and the surface layer material and put them into a mould accordingly; (2) to make upper layer material and lower layer material combine with each other tightly through vibration and compress shaping; (3) to remove the form and curing the concrete until it hardens to complete a strong durable light brick. This light brick contributes multiple advantages, such as capable of reducing roof temperature by its heat insulation effect, of light weight, of long life span and with better drainage effect.
Patent TW-511398-B (TW)
Title: Apparatus and method to control the uniformity of plasma by reducing radial loss
Inventor: QUON BILL H
IPC: C23F1/00
Filed: 2001-08-29
Granted: 2002-11-21
Abstract: A capacitively coupled plasma reactor composed of: a reactor chamber enclosing a plasma region; upper and lower main plasma generating electrodes for generating a processing plasma in a central portion of the plasma region by transmitting electrical power from a power source to the central portion while a gas is present in the plasma region; and a magnetic mirror including at least one set of magnets for maintaining a boundary layer plasma in a boundary portion of the plasma region around the processing plasma. A capacitively coupled plasma reactor composed of: a reactor chamber enclosing a plasma region; upper and lower plasma generating electrodes for generating a processing plasma in the plasma region by transmitting electrical power from a power source to the plasma region while a gas is present in the plasma region; and power supplies for applying a VHF drive voltage to the upper plasma generating electrode and RF bias voltages at a lower frequency than the VHF drive voltage to the upper and lower plasma generating electrodes.
Patent TW-I254501-B (TW)
Title: Pivoting device for electronic product
Inventor: LU CHANG-KUN
IPC: F16M11/06
Filed: 2001-09-14
Granted: 2006-05-01
Abstract: This invention relates to a pivoting device. It is suitable for adjusting the angle between a first part and a second part of an electronic product. It comprises a first cylinder, a first bridge object, a fixing base, and a fixing rotation shaft. The first cylinder is fixed on the first part, it has a circumferential surface formed uneven ripples, and a top center formed thereon a first fixing hole. The first bridge object fixed on the second part, it has a top surface with a shape that is flexible and capable of matching to the circumferential surface of the first cylinder. The fixing base is fixed on the second part, it has a second fixing hole formed thereon. The fixing rotation shaft passes through the second fixing hole of the fixing base and the first fixing hole on the top of the first cylinder. By means of this way, the circumferential surface of the first cylinder is rotated along the top of the first bridge to provide forward force closely matched.
Patent TW-I235110-B (TW)
Title: Method for continuously manufacturing optical article
Inventor: YAMAMOTO TAMENOBU
IPC: G02C7/12
Filed: 2001-09-26
Granted: 2005-07-01
Abstract: There is provided a method for continuously manufacturing an optical article which comprises a first step of thermal press-molding a sheet-like curved body and a second step of insert injection-molding a back resin on a concave side of the sheet-like curved body, while transferring the continuous sheet in a longitudinal direction, using an apparatus for manufacturing an optical article in which a press-molding machine which can thermal press-mold the sheet-like curved body and an insert injection-molding machine equipped with a mold having a curvature similar to that of the sheet-like curved body are serially positioned in this order, wherein a cycle of thermal press-molding and a cycle of insert injection-molding are synchronized to continuously insert-mold the back resin on a concave side of the sheet-like curved body while continuously thermal press-molding the sheet-like curved body.
Patent TW-522601-B (TW)
Title: nonaqueous organic secondary cell
Inventor: CHEN SHOU-AN
IPC: H01M4/60
Filed: 2001-10-05
Granted: 2003-03-01
Abstract: A polyaniline (PAN) is used as a positive electrode material of a secondary cell when the cell is being discharged, the PAN undergoes de-doping reaction, leading to decrease conductivity of the positive electrode and decrease degree of utilization of the positive electrode active material. A conventional improvement method is to directly blend the positive electrode active material with a conductive material to increase conductivity; however, the direct blend method will result in phenomenon such as aggregation of the individual ingredients or uneven dispersion of the conductive material. This invention incorporates conductive carbon black during PAN polymerization and employs high-speed impingement mills of utilizing high speed fluid collision for grinding purpose to crash and disperse particles in the reaction liquid so that PAN-conductive carbon black composite with fine particle size can be obtained without the need of adding surfactant; the composite is then used to produce cell electrodes; as the carbon black is uniformly dispersed in the cell electrode plate forming conductive passageway, the degree of conductivity of the passageway will not decrease during cell discharging; therefore, the degree of utilization of the positive electrode active material can be increased. Compared to cells with positive electrode plates made from conventional, direct blend PAN-conductive material, lithium metal secondary cells made from the PAN-conductive carbon black composite have approximately 50% improvement in electrical capacity and energy density. This composite manufacturing method can be also applied to other conjugated conductive polymers.
Patent TW-567387-B (TW)
Title: Display apparatus, display apparatus driving method, and liquid crystal display apparatus driving method
Inventor: KANBE MAKOTO
IPC: G09G3/36
Filed: 2001-10-12
Granted: 2003-12-21
Abstract: An object of the invention is to provide a liquid crystal display apparatus driving method capable of preventing display quality deterioration caused by action of DC voltage components exerted on a liquid crystal layer. Common electrode potential set at counter potential K5 for correcting a first DC voltage component DeltaV1 ascribable to parasitic capacitance of TFT is shifted to correction potential K6 for correcting a second DC voltage component DeltaV1 ascribable to characteristics of each substrate. Since the second DC voltage component DeltaV1 ascribable to difference in characteristics between the substrates and the first DC voltage component DeltaV1 ascribable to parasitic capacitance are corrected beforehand, the DC voltage component acting upon the liquid crystal layer is kept as small as possible, thereby preventing an image persistence or the like, so that the reliability of the liquid crystal display apparatus improves.
Patent TW-508788-B (TW)
Title: Production method of anti-fuse
Inventor: SHIE TSUNG-MIN
IPC: H01L23/525
Filed: 2001-11-12
Granted: 2002-11-01
Abstract: A production method of anti-fuse comprises forming an inner metal dielectric layer on substrate and a funnel dielectric window; then forming a layer of first semiconductor layer on substrate and filling the funnel dielectric window and conducting CMP process to remove the first conductor layer outside of the funnel dielectric window to form a conductor plug; next, performing an oxide CMP to smooth the conductor plug surface and forming a dielectric layer and a cap layer on the conductor plug with the dielectric window on top of cap layer; and finally, forming a second conductor layer on the substrate and filling the dielectric window.
Patent TW-533425-B (TW)
Title: Method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox
Inventor: ANAND DARREN L
IPC: H03K19/173
Filed: 2001-11-30
Granted: 2003-05-21
Abstract: A method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox allows a reduction in the number of fuses required to repair or customize an integrated circuit and allows fuses to be grouped outside of the macros repaired by the fuses. The remote location of fuses allows flexibility in the placement of macros having redundant repair capability, as well as a preferable grouping of fuses for both programming convenience and circuit layout facilitation. The fuses are arranged in rows and columns and represent control words and run-length compressed data to provide a greater quantity of repair points per fuse. The data can be loaded serially into shift registers and shifted to the macro locations to control the selection of redundant circuits to repair integrated circuits having defects or to customize logic.
Patent TW-504819-B (TW)
Title: Packaging process of ultra-thin flip chip electronic device
Inventor: BAU JR-MIN
IPC: H01L23/28
Filed: 2001-12-04
Granted: 2002-10-01
Abstract: The present invention provides a packaging process of ultra-thin flip chip electronic device, which comprises sequentially the steps of: a crystal connection step to connect a crystal and a substrate electrically, a crystal cleaning step to reduce the thickness of the crystal by polishing the crystal from one of the surface toward the substrate direction for a predetermined thickness, and a protecting encapsulation step to connect to the substrate by plural molding compounds, so that the crystal and the substrate are encapsulated in a body and are isolated from the exterior. By the thinning step of the crystal, the thickness of the crystal is greatly reduced to achieve the purpose of making the electronic device lighter and thinner.
Patent TW-548741-B (TW)
Title: Electrode for plasma processes and method for manufacture and use thereof
Inventor: HUBACEK JEROME S
IPC: H05H1/46
Filed: 2001-12-21
Granted: 2003-08-21
Abstract: A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.
Patent TW-544843-B (TW)
Title: Sti pull-down to control SiGe facet growth
Inventor: COOLBAUGH DOUGLAS DUANE
IPC: H01L29/732
Filed: 2002-01-18
Granted: 2003-08-01
Abstract: An SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. An SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and an SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.
Patent TW-505727-B (TW)
Title: A method and apparatus for forming a laminated sheet material by spattering
Inventor: COTTIER JOHN SYOHEY
IPC: C04B24/00
Filed: 2002-03-01
Granted: 2002-10-11
Abstract: A method for forming a laminated sheet material from a slurry having a liquid component. The method comprising the steps of: applying the slurry to a substrate in successive layers to form a wet sheet of predetermined thickness; applying at least one of the layers by spattering; removing the wet sheet from the substrate; and drying or curing the wet sheet so as to remove at least a substantial proportion of the liquid component and thereby forming the sheet material.
Patent TW-591524-B (TW)
Title: Updating method of keyboard controller in notebook computer
Inventor: HUANG TZUNG-SHENG
IPC: G06F9/445
Filed: 2002-03-13
Granted: 2004-06-11
Abstract: An updating method of keyboard controller in notebook computer is disclosed. The notebook computer has a keyboard controller having a RAM and ROM. The updating method comprises: receiving a firmware command by the keyboard controller to update the keyboard controller; storing the keyboard controller command byte and the keyboard status of the keyboard controller into the RAM, and making the keyboard controller enter the idle status, or proceeding updating the ROM; and determining whether the ROM is updated, and if the update of ROM is not completed, waiting till the ROM update is completed; otherwise, setting an OFF identifier and resetting the keyboard controller. Thus, the keyboard controller functions in such a manner that the system will not be turned off, and the keyboard and mouse can still operate normally when the windows system is updated.
Patent TW-I228071-B (TW)
Title: Polyolefin series resin film, composition for preparing the same, process for preparing the composition for preparing the same, and apparatus for preparing the same
Inventor: TAKATA ATSUHIRO
IPC: B29C48/67
Filed: 2002-03-13
Granted: 2005-02-21
Abstract: The polyolefin [A] has a weight average molecular chain length of 2850 nm or longer and a density rho1 (g/cm<3>), the polyolefin wax [B] has a weight average molecular weight of 700-6000 and a density rho2 (g/cm<3>), the polyolefin and the polyolefin wax are incorporated at [A]/[B]=90/10-50/50 (ratio by weight), and the densities rho1 and rho2 satisfy the following conditions: 0.92 <= rho1 <= 0.94, 0.91 <= rho2 <= 0.93, -0.03 <= (rho1-rho2) <= 0.03.
Patent TW-538493-B (TW)
Title: Measuring back-side voltage of an integrated circuit
Inventor: SHAW CHRISTOPHER R
IPC: G01R31/302
Filed: 2002-04-16
Granted: 2003-06-21
Abstract: Methods for integrated circuit diagnosis, characterization or modification using a charged particle beam. In one implementation, the bulk silicon substrate of an integrated circuit is thinned to about 1 to 3 mum from the deepest well, a voltage is applied to a circuit element that is beneath the outer surface of the thinned substrate. The applied voltage induces an electrical potential on the outer surface, which is detected as a surface feature on the outer surface by its interaction with the charged particle beam.
Patent TW-569466-B (TW)
Title: Method of manufacturing thin film transistor, and thin film transistor and liquid crystal display panel manufactured using such method
Inventor: YUKAWA TEIZO
IPC: H01L21/77
Filed: 2002-05-07
Granted: 2004-01-01
Abstract: A method of manufacturing a thin film transistor with a reduced number of manufacturing steps is provided, in which the possibility of light entering the channel forming layer of the thin film transistor can be obviated. The thin film transistor comprising a gate electrode (16a), a drain electrode (12a), a source electrode (17a) and a channel (24) and a shield layer (21) on a transparent substrate (20). The channel (24) is formed in that a channel forming layer is photolithographically patterned with the shield layer (21) as mask. As shield layer (21), the gate electrode (16a) can be used, this giving a bottom gate thin film transistor. The transistor is very suitable for use in a liquid crystal display.
Patent TW-I233339-B (TW)
Title: Fan
Inventor: SHIRATORI NORIHIKO
IPC: A45B27/00
Filed: 2002-05-15
Granted: 2005-06-01
Abstract: A fan comprises a fan body and a handle secured to the fan body. The fan body is made of a transparent sheet. An LED is provided in the handle for illuminating the fan body. Batteries are mounted in the handle for operating the LED.
Patent TW-546842-B (TW)
Title: Multiple-layers gate structure and manufacturing method thereof
Inventor: CHEN NENG-KUO
IPC: H01L21/28
Filed: 2002-05-17
Granted: 2003-08-11
Abstract: A multiple-layers gate structure sequentially includes a gate oxide layer, a doped polysilicon layer, a silicongermanium layer, a nitridetungsten layer, and a tungsten layer. The polysilicon layer is doped with boron. The silicongermanium layer is formed with deposition or ion implantation process. Because the boron migrates more slowly in the silicongermanium layer, during the thermal process, the boron does not migrate to the nitridetungsten layer and thus the contact resistance of the gate structure keeps in a desired level.
Patent TW-I238369-B (TW)
Title: Adaptive image deinterlace system based on intelligent network
Inventor: KU CHAO-CHEE
IPC: G06T5/00
Filed: 2002-05-28
Granted: 2005-08-21
Abstract: The present invention provides an adaptive image deinterlace system based on intelligent network, which comprises a first intelligent network, for generating a first signal, a second signal, and a third signal based on three image frames; a first interpolating filter, for conducting a first type of interpolation on these image frames based on the first signal; a second interpolation filter, for conducting a second type of interpolation on these image frames based on the second signal; and, a third interpolation filter, for conducting a third type of interpolation on these image frames based on the third signal.
Patent TW-543354-B (TW)
Title: Blocking member of rotation angle
Inventor: CHEN CHIH-MING
IPC: H05K7/00
Filed: 2002-06-10
Granted: 2003-07-21
Abstract: A kind of blocking member of rotation angle is disclosed in the present invention, and is suitable for use in passing a printed circuit board, which carries plural components having connection pins, through the solder oven. The invention includes the followings: an outer frame support plate; a disc with rotation function placed on the outer frame support-plate, in which the disc has an opening; plural fixing apparatuses of circuit board, which are located at the periphery of the opening; and plural stop-rotation apparatuses, which are located at the periphery of the disc.
Patent TW-I268926-B (TW)
Title: Method for the preparation of escitalopram
Inventor: SOMMER MICHAEL BECH
IPC: C07D307/87
Filed: 2002-07-11
Granted: 2006-12-21
Abstract: A novel method is provided for the manufacture of escitalopram. The method comprises chromatographic separation of the enantiomers of citalopram or an intermediate in the production of citalopram using a chiral stationary phase such as Chiralpak(TM) AD or Chiralcel(TM) OD. Novel chiral intermediates for the synthesis of escitalopram made by said method are also provided.
Patent TW-578188-B (TW)
Title: Funnel structure of cathode-ray tube
Inventor: KIM DO-HOON
IPC: H01J29/86
Filed: 2002-07-26
Granted: 2004-03-01
Abstract: Disclosed is a color cathode-ray tube which has an optimum funnel structure so that it has a slim tube structure while reducing stress caused by its internal vacuum pressure. The color cathode-ray tube satisfies a relation of 0.12xL' < S < 0.27xL' where ""L"" represents a length from a seal line, where a panel and a funnel are sealably coupled together, to a yoke line of the funnel in an axial direction of the tube, ""L'"" represents 1/2 of the length of the seal line, ""A"" represents 1/2 of a seal stress adjustment line formed by connecting points spaced apart from the seal line by a distance of ""L x 0.67"" toward the yoke portion, and ""S"" represents a difference between ""L'"" and ""A"". The cathode-ray tube of the present invention has an optimum funnel structure capable of providing an effect of reducing the high stress conventionally generated around the seal line and yoke line by 25% and 53%, respectively. In addition, it is possible to secure desired resistance to impact, and to achieve an improvement in process yield in accordance with the reduction of the stress generated at the funnel in a vacuum state.