baber/WOPTO huggingface dataset:
Patent TW-306036-B (TW)
Title: Semiconductor memory device with capacitor (part 2)
Inventor: JAW FANG-CHINQ
IPC: H01L27/108
Filed: 1996-08-16
Granted: 1997-05-21
Abstract: A semiconductor memory device with capacitor comprises of: (1) one substrate; (2) one transfer transistor formed on the substrate, and including drain and source region; (3) one storage capacitor electrically coupled to one of drain and source region of the transfer transistor; The storage capacitor comprises of: (1) one trunk-type like conductive layer, with one bottom electrically coupled to one of drain and source region of the transfer transistor, and with one upward extending part from the bottom with one approximately upward direction; (2) one branch-type like up conductive layer electrically coupled to above of the trunk-type like conductive layer; (3) at least one branch-type like down conductive layer with one cross section like L-shape and connected to on down surface of the branch-type like up conductive layer, in which the trunk-type like conductive layer, the branch-type like up conductive layer, and type branch-type like down conductive layer constitue one storage electrode of the storage capacitor; (4) one dielectric formed on the trunk-type like conductive layer, the branch-type up conductive layer, and exposed surface of the branch-type down conductive layer; and (5) one up conductive layer formed on the dielectric to constitute one opposed electrode of the storage capacitor.
Patent TW-358802-B (TW)
Title: Production of optically active 2-halo-1-(substituted phenyl) ethanol and substituted styrene oxide
Inventor: KODAMA HIROYOSHI
IPC: C07C29/74
Filed: 1996-08-20
Granted: 1999-05-21
Abstract: A process for producing optically active 2-halo-1-(substituted phenyl)ethanol of a formula (Ia) or optically active styrene oxide of a formula (Ib). The process comprises the steps of reacting a compound of a formula (II) with phthalic anhydride to give a compound of a formula (III), performing optical resolution on the resulting compound using an optically active organic amine as a resolving agent, and finally performing hydrolysis or alcoholysis on the optically resolved compound (Ia) or (Ib). The scheme of the above process is: wherein X represents a halogen atom, Y represents a hydrogen atom, a halogen atom, a C1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C6 haloalkyl group or a C1-C6 haloalkoxy group, Z represents a hydrogen atom, a halogen atom or a C1-C6 alkyl group, n is 0 or an integer of 1 to 3 and m is 0 or an integer of 1 to 2. The resulting optically active compounds are useful as an intermediate for medicines.
Patent TW-348329-B (TW)
Title: Jack socket
Inventor: BERNHARD WEINGARTNER
IPC: H01R13/00
Filed: 1996-10-15
Granted: 1998-12-21
Abstract: A method of inductive charging of a moving vehicle^s battery, which comprises using means for producing a magnetic field along different portions of an extended linear distance and an inductive coil mounted on an electric vehicle, by having the electric vehicle, as it traverses the different portions of the extended linear distance, move within the influence of the magnetic field.
Patent TW-445143-B (TW)
Title: Compositions for the prevention and treatment of gastrointestinal disorders
Inventor: FITZGERALD JAMESINA ANNE
IPC: A61K33/24
Filed: 1996-12-26
Granted: 2001-07-11
Abstract: The subject invention encompasses compositions comprising bismuth and one or more antimicrobials for the prevention and treatment of a human or lower animal subject having a gastrointestinal disorder caused or medicated by algae and/or cyanobacteria.
Patent TW-329543-B (TW)
Title: The processes for MOS transistor with raised source/drain
Inventor: LIN HORNG-JYH
IPC: H01L21/335
Filed: 1997-05-13
Granted: 1998-04-11
Abstract: A process of MOS transistor, its steps include: -Swquentially form gate oxide, gate and 1st dielectric on substrate already formed isolated; -Sequentially etch 1st dielectric and gate to define gate region; -Form sidewall sapcer on gate region; -Form doped polysilicon on whole substrate; -Etch polysilicon to form isolation and local interconnection between each device on substrate; -Deposit 2ed dielectric; -Proceed high-temperature annealing to diffuse doped element of pol ysilicon into substrate to form shallow junction; -Proceed polishing of surface planarization to wear polysilicon lo cated on gate region to define totally isolated source/drain region; source/drain region; -Deposit 3rd dielectric; -Produce contact window and metal interconnection of gate, source a nd drain.
Patent TW-364877-B (TW)
Title: Reusable mat for removing liquid contaminants
Inventor: WILLIAMS MARTIN MARION
IPC: B01J20/26
Filed: 1997-05-24
Granted: 1999-07-21
Abstract: A method for removing liquid contaminant from a surface comprising: (a) forming a nonwoven fabric; (b) applying a continuous aqueous foam coating composition having an air to liquid ratio from 5 to 1 to 20 to 1 by volume to at least one side of said nonwoven fabric, wherein said coating composition comprises an emulsion polymer comprising a polyurethane or at least one polymerized monomer selected from the group consisting of C1-C22 alkyl (meth)acrylates, styrene, butadiene, vinyl acetate, vinylidene chloride, vinyl chloride, ethylene and (meth)acrylonitrile; (c) drying said foam coating; (d) contacting said liquid contaminant with said dried foam coating, whereby said foamed coating absorbs at least some of said liquid contaminant. This invention also relates to a reusable mat for removing liquid contaminants from surfaces and a method for reusing the mat.
Patent TW-454047-B (TW)
Title: Method for reducing resistivity of chemical vapor deposited titanium nitride film
Inventor: HE WEN-YU
IPC: H05H1/00
Filed: 1997-08-08
Granted: 2001-09-11
Abstract: A method for reducing resistivity of a deposited thin film. The method is mainly used for an electrically interconnected structure on a semiconductor substrate with a thin film formed thereon, and a metal layer is formed on the electrically interconnected structure. The method comprises: a nitride metal is deposited on the thin film of the electrically interconnected structure and also on the metal layer formed in the electrically interconnected structure. A first plasma treatment is performed on the nitride metal. Then, a rapid nitrogen treatment is performed on the metal layer. Afterwards, a second plasma treatment with a power higher than 300 watt and a treatment time longer than 32 seconds is performed on the nitride metal.
Patent TW-338750-B (TW)
Title: The color changeable thermal transfer printing color band
Inventor: TZOU YI-REN
IPC: B41M5/40
Filed: 1997-11-05
Granted: 1998-08-21
Abstract: A color changeable thermal transfer printing color band, it includes: Substrate; Release agent layer, is formed on substrate, and will reduce the adhesion ability when it is heated; Multi-layer thin film stacked, has optical interference effect, and through release agent layer stuck on substrate; Adhesion layer, is formed on multi-layer thin film stacked.
Patent TW-363007-B (TW)
Title: Blade lock mechanism for folding knife
Inventor: WEATHERLY JAMES S
IPC: B26B1/02
Filed: 1997-11-20
Granted: 1999-07-01
Abstract: A liner lock folding knife with an improved liner lock mechanism which can be manufactured satisfactorily by mass production techniques and conventional machine tools. A locking face surface engaged by a contact end of a locking finger is a concave partial cylinder whose central axis of curvature is located in a position offset with respect to the blade, in the direction toward the side of the handle from which the locking finger extends. The concave surface of the locking face has a radius of curvature smaller than the radius of curvature of the path of the contact end of the locking finger.
Patent TW-387158-B (TW)
Title: Semiconductor having large volume fraction of intermediate range order material
Inventor: OVSHINSKY STANFORD R
IPC: H01L31/028
Filed: 1998-02-18
Granted: 2000-04-11
Abstract: A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.
Patent TW-370668-B (TW)
Title: Recording of a trick play signal in a helical scan type recording apparatus
Inventor: RIJCKAERT ALBERT MARIA ARNOLD
IPC: G11B15/12
Filed: 1998-02-26
Granted: 1999-09-21
Abstract: A recording apparatus records an MPEG information signal and a trick play signal in tracks on a record carrier (1). The trick play signal is meant for reproduction in a corresponding reproduction apparatus at a record carrier trick play speed which is n1 times the nominal reproduction speed. Time stamps are added to the packets included in the trick play signal, and sync block numbers are added to the sync blocks including a packet, and the sync blocks are recorded at specific positions in the tracks. A specific algorithm is provided to determine those positions, dependent of the time stamps, and the sync block numbers given, such that upon reproduction at the trick play speed, the reproduction apparatus requires a buffer memory of a limited capacity.
Patent TW-371652-B (TW)
Title: Oxidation process of branched aliphatic hydrocarbons and process for producing the oxide
Inventor: NAKANO TATSUYA
IPC: C07C31/12
Filed: 1998-03-09
Granted: 1999-10-11
Abstract: A non-cyclic branched aliphatic hydrocarbon (e.g. isobutane) is oxidized with oxygen in the presence of an oxidation catalyst comprising an amide compound of the following formula (1) (e.g. N-hydroxyphthalimide) or an oxidation catalyst comprising the amide compound and a co-catalyst (e.g. a transition metal compound of selected from group 3A, 4A, 5A, 6A, 7A, 8 and 1B elements of the Periodic Table of elements), for the formation of an oxide (e.g. t-butanol, acetone), wherein R1 and R2 represent a substituent such as a hydrogen atom or a halogen atom, or R1 and R2 may together form a double bond or an aromatic or nonromantic 5- to 12-membered ring, X is 0 or OH, and n is 1 to 3.
Patent TW-392298-B (TW)
Title: Method of decreasing the resistance of buried layer structure and the structure completed by the same
Inventor: WEN WEN-YING
IPC: H01L21/768
Filed: 1998-03-27
Granted: 2000-06-01
Abstract: The invention is about a method of decreasing the resistance of buried layer structure and the completed structure that is used to complete the buried layer structure of the bit line or interconnect in the memory array. In the invention, a layer of self-aligned metal silicide is formed on the conventional buried structure to obtain a novel buried layer structure with a low resistance. Additionally, an oxide layer is formed on top of the buried layer to protect the buried layer structure and prevent the possible contamination from the subsequent fabrication process.
Patent TW-475261-B (TW)
Title: DRAM manufacturing method for preventing spacer etching damage
Inventor: GUNG JENG-JR
IPC: H01L27/108
Filed: 1998-03-31
Granted: 2002-02-01
Abstract: There is provided a DRAM manufacturing method for preventing spacer etching damage, which is used in an area with memory cell transistor whose periphery has a semiconductor device with a first peripheral device area and a second peripheral device area. The top of the first peripheral device area and the second peripheral device area of the memory cell transistor area is covered with a spacer oxide layer. The method comprises the steps of: forming a first photoresist to cover on the spacer oxide layer, etching the spacer oxide layer exposed out of the second peripheral device area, illuminating and performing a second ion doping; forming a second photoresist to cover on the spacer oxide layer, etching the spacer oxide layer exposed out of the first peripheral device area, illuminating and performing a first ion doping.
Patent TW-482657-B (TW)
Title: Process and apparatus production of a reduced fat culinary sauce
Inventor: HARDMAN JANE H
IPC: A23L23/00
Filed: 1998-05-05
Granted: 2002-04-11
Abstract: A process and an apparatus for the production of a new reduced fat culinary sauce which comprises mixing the ingredients of a reduced fat culinary sauce whereby part of the fat present in a regular culinary sauce is substituted by water, controlling the water activity to a value less than 0.95, mixing or precooking below 160 DEG F and then processing for a minimum of 0.87 minutes by continuous steam injection and holding at a temperature of at least 160 DEG F.
Patent TW-385243-B (TW)
Title: Non-magnetic welding of soft-magnetic junction portion
Inventor: MOTOKURA YOSHINOBU
IPC: B23K26/21
Filed: 1998-05-14
Granted: 2000-03-21
Abstract: The invention is to provide a non-magnetic welding of soft-magnetic junction portion which can reduce by half the processing time of welding and effectively prevent the short circuit of magnetic circuit. The non-magnetic welding according to the present invention is a method for welding the two soft magnetic units by interposing a non-magnetic material between 1st soft magnetic unit corresponding to S pole and 2nd soft magnetic unit so as to secure the non-magnetic portion between the two magnetic units for preventing the short circuit of the magnetic circuit. In the preparation of the present method, the 1st soft magnetic unit, non-magnetic member and 2nd soft magnetic unit are disposed adjoiningly. In the welding operation according to this method, by welding 1st soft magnetic unit, non-magnetic member and 2nd soft-magnetic unit in one body, the reformat is melted into the welded portion and reforms said portion and maintains non-magnetism. Thus the welding process is reduced from two process to one process.
Patent TW-399307-B (TW)
Title: Method and apparatus for processing disk-shaped workpieces having a cassette for holding a plurality of disk-shaped workpieces which includes a tilt mechanism
Inventor: ALLEN ROBERT F
IPC: B65G49/07
Filed: 1998-06-03
Granted: 2000-07-21
Abstract: A tilt mechanism for periodically tilting a cassette configured to hold a plurality of wafers or workpieces such that the wafers or workpieces become gravity-loaded against a rear portion of the cassette. The tilt mechanism is mounted entirely above a workable of a CMP or other processing machine and comprises a housing which houses a circular cam having a spiral groove formed therein. A tilt arm is pivotally mounted to the housing and extends vertically between a lower end which is adjacent the cam and an upper end which is fixed to a platform supporting a cassette holding a plurality of workpieces. A cam follower is attached to the lower end of the arm and projects into the groove. Rotary motion of the cam effects pivotal movement of the tilt arm which, in turn, effects tilting of the support platform and the cassette.
Patent TW-457229-B (TW)
Title: Catalytic process of partial hydrogenation of benzene
Inventor: HU SUNG-CHENG
IPC: C07C5/11
Filed: 1998-06-15
Granted: 2001-10-01
Abstract: The present invention relates to a process for partial hydrogenating an aromatic hydrocarbon such as benzene, which comprises reacting the aromatic hydrocarbon and hydrogen in the present of an alkali aqueous solution to obtain a cycloolefine, characterized in that using a metal of group VIII of the periodic table supported on a carrier composed of a lanthanum and zinc binary oxide as a catalyst, wherein the mole ratio of the lanthanum to zinc is 1:1 to 1:5, and the amount of the metal supported on said carrier is 1 to 5% by weight of the total amount of the catalyst; also to the used catalyst system and its preparation process.
Patent TW-367603-B (TW)
Title: Electrostatic discharge protection circuit for SRAM
Inventor: XU ZHEN-CONG
IPC: H01L27/02
Filed: 1998-06-20
Granted: 1999-08-21
Abstract: A kind of electrostatic discharge protection circuit for SRAM which employs CMOS coupled with an input port and an internal circuit and with one input pad coupled with input port and internal circuit. In which, the source of CMOS is connected to a polycrystalline silicon layer and gate and coupled with a voltage line and connected to drain and a metal layer by a dielectric; then, coupling the metal layer with the input pad. The metal layer covered on top of drain can increase the thermal dissipation ability for electrostatic discharge of SRAM and keep a suitable wiring pitch for connection of source and drain. The input pad is formed on top of CMOS which can greatly reduce the component area and not influence the capacity of electrostatic discharge.
Patent TW-391064-B (TW)
Title: Self-aligned multiple crown storage capacitor and method of formation
Inventor: TSU ROBERT YUNG-HIS
IPC: H01L21/8242
Filed: 1998-07-17
Granted: 2000-05-21
Abstract: A self-aligned multiple crown storage cell structure 10 for use in a semiconductor memory deivce and method of formation that provide a storage capacitor with increased capacitance. A double crown storage cell structure embodiment 10 can be formed by patterning a contact via 18 into a planarized base layer that can include an insulating layer 12, an etch stop layer 14, and a hard mask layer 16, depositing a first conductive layer 20, etching the first conductive layer 20, etching the hard mask layer 16, depositing a second conductive layer 24 onto the conductive material-coated patterned via 18 and the etch stop layer 14, depositing a sacrificial (oxide) layer 26 onto the second conductive layer 24, etching the sacrificial layer 26. The last several steps can be repeated to form a storage cell structure 10 with three or more crowns.
Patent TW-392314-B (TW)
Title: Integrated circuit socket for clipping integrated circuit having multiple parallel pins
Inventor: HAMA HIROYUKI
IPC: H01R33/76
Filed: 1998-09-08
Granted: 2000-06-01
Abstract: A kind of integrated circuit socket which is used for clipping integrated circuit having multiple parallel lead frames and multiple pins and each pin includes tip units folded and vertical to the lead frames. The integrated circuit socket comprises contact pins for contacting the lead frame and pressing unit for pressing the lead frames to contact pins. The tip unit has a soft-welding unit being welded on the target object. The lead frames are configured between pressing unit and contact pins. The contact pins is provided with elasticity in the direction from pressing unit pressing toward lead frames. In order to have the contact pins with elasticity, there is a hollow tube therein and having a spring in the tube that with a central axis in the pressing direction of the spring. There still are conductive contact pins on integrated circuit for supporting the integrated circuit. When detecting the pins for electrically connecting to support pins, it can detect whether the integrated circuit has been properly configured on integrated circuit socket. The contact pins are arranged in cross form. The integrated circuit socket further comprises the clipping unit for clip the contact pins. The contact pins will pass through the clipping unit.
Patent TW-460632-B (TW)
Title: Surface treated steel sheet with low contact resistance and connection terminal material produced thereof
Inventor: YAMANE KEIJI
IPC: B05D7/14
Filed: 1998-11-10
Granted: 2001-10-21
Abstract: A plated steel sheet and a connection terminal material used thereof with low contact resistance and superior corrosion resistance and adhesion of a coated film which is formed a coated film on a plated steel sheet surface using a stainless steel sheet as plated base sheet and a solution of post treatment including carbon black or graphite, carboxymethyl cellulose, and water borne organic resin composed from acrylic resin, polyester resin, urethane resin, or phenol resin is provided. A plated steel sheet and a connection terminal material used thereof with low contact resistance, which is treated by diffusion treatment after nickel plating at the lower layer and tin plating thereon in case of post treatment method of stainless steel sheet, and which is treated using a water-soluble solution of post treatment including carbon black or graphite, carboxymethyl cellulose, water borne organic resin such as acrylic resin, polyester resin, urethane resin, or phenol resin.
Patent TW-396458-B (TW)
Title: Reduction of gate-induced drain leakage in semiconductor devices
Inventor: BALASUBRAMANYAM KARANAM
IPC: H01L27/108
Filed: 1998-11-26
Granted: 2000-07-01
Abstract: Reduction of gate-induced-drain-leakage in metal oxide semiconductor (MOS) devices is achieved by performing an anneal in a non-oxidizing ambient. In one embodiment, the anneal is performed in a argon and/or ammonia ambients after gate sidewall oxidation that forms the spacers.
Patent TW-409463-B (TW)
Title: Post-filtered recirculating delay-locked loop and method of operation
Inventor: FAHRENBRUCH SHAWN A
IPC: H03K5/135
Filed: 1998-12-23
Granted: 2000-10-21
Abstract: An apparatus for producing a clock signal includes a recirculating delay-locked loop operable to receive a reference clock signal, produce an output clock signal, and adjust the relative phase, with respect to the reference clock signal, of the output clock signal to align the output clock signal with the reference clock signal. The apparatus also includes a phase filter that is operable to receive the output clock signal and filter any phase shift of the output clock signal over a plurality of cycles of the output clock to produce an adjusted output clock signal.
Patent TW-408066-B (TW)
Title: A portable device for releasing fragrance at controlled rates
Inventor: LAI JUNG-FANG
IPC: A45D34/00
Filed: 1999-01-21
Granted: 2000-10-11
Abstract: A portable device for releasing fragrance at a controlled rate is made of three layers. The top layer is either a ventilative non-woven fabric or a material made from the animal or synthetic leathers. The middle layer is based on a high molecular weight polymer selected from a group of hydrogels, in which a fragrant component and, optionally, an excipient are dispersed. The bottom layer is either a double-sided adhesive tape or other materials that can be used as a support. The device is to be used by wearing on the clothes, attaching to the body or some belongings as a perfume. It can also be used as a deodorant or a refresher. The slow diffusion of the fragrant component in the polymer allows a controlled-release of the fragrance for an extended period of time.
Patent TW-427098-B (TW)
Title: Organic electroluminescent devices
Inventor: KIDO JUNJI
IPC: H01L51/50
Filed: 1999-02-09
Granted: 2001-03-21
Abstract: An organic electroluminescent (EL) device comprising at least one luminescent layer of an organic compound, the luminescent layer being positioned between a cathode electrode and an anode electrode opposed to the cathode electrode, and an organic layer positioned adjacent to the cathode electrode, in which the organic layer is constituted from an organic metal complex compound containing at least one of alkali metal ions, alkali earth metal ions and rare earth metal ions, and the cathode electrode is constituted from a metal capable of reducing the metal ion in the complex compound, in vacuum, to the corresponding metal. The cathode electrode can be formed from a low cost and stable metal which is well-known as the wiring material. The EL device ensures a diminished energy barrier in an electron injection from the cathode electrode into the luminescent layer, a lowered driving voltage, and a high efficiency and luminescence.