baber/WOPTO huggingface dataset:
Patent TW-357438-B (TW)
Title: Semiconductor manufacturing process with integrated self-aligned silicide and self-aligned contract window
Inventor: Wang quan-zhong
IPC: H01L21/768
Filed: 1997-12-22
Granted: 1999-05-01
Abstract: A semiconductor manufacturing process with integrated self-aligned silicide and self-aligned contract window, including the following steps: (a) on a substrate, separation with a shallow trench or field oxide layer a first active area and a second active area, being the first active area for forming logic circuits and the second active area for forming memory circuits; (b) forming accordingly on the substrate a gate oxide layer and a polycrystalline silicon layer; (c) forming on the second active area a silicide and a mask layer; (d) on the second active area, defining said layers for forming a polycide gate coated with a mask layer; (e) on the first active area, defining the gate oxide layer and the polycrystalline silicon layer, for forming a polycrystalline silicon gate electrode; (f) forming on the side of the gate structures a lateral wall layer; (g) forming source/drain electrode on the substrate of both sides of the gate electrode structure; (h) forming a blocking layer, coating the structure of the second active area; (i) by using a self-aligned silicide, forming silicide substance on the polycrystaline silicon gate electrode, source/drain electrode in the first active area; (j) forming the first insulator, coating the substrate; and (k) etching the insulation layer by using the blocking layer and the lateral wall layer as blocking layers and for forming on the second active area a self-aligned contact window, for exposing either the source or the drain area for contact area.
Patent TW-381969-B (TW)
Title: Rice-washing device
Inventor: NAKANISHI YASURO
IPC: A47J43/24
Filed: 1998-01-05
Granted: 2000-02-11
Abstract: To provide a rice-washing device which has high efficiency in rice washing by centrifugal force and centrifugal separating function of high velocity rotating water flow generated within a container of the device. This rice-washing device is provided with a container of which the wall has circular inner periphery. And a nozzle which perforates the wall from its outer periphery is provided. The nozzle perforates the wall along its inner periphery in approximately horizontal direction. Water flow which rotates in high velocity within the container is generated by injecting pressurized water from the nozzle. The rice-washing device is preferably provided with intakes run through the wall of the container from outside to inside. The size of each intake is limited to prevent rice grains from pass through the intake. Also, the rice-washing device is preferably provided with an upper lid which has a outlet for water at the center portion, or provided with a necked portion at the upper portion of the container.
Patent TW-412479-B (TW)
Title: Control device for a servo press
Inventor: DOUBA EIJI
IPC: B30B1/18
Filed: 1998-03-30
Granted: 2000-11-21
Abstract: The invention is to provide a servo press controller which can prevent the servo runaway caused by the malfunction of CPUs, the fault of a position detector, or other troubles to thereby increase the safety of the servo press. For this purpose, first to three CPUs each of which conducts a different control among the input of the set data, the calculation of a servo position command, and the calculation of a servo speed command sends and receives watch dog signals between itself and another CPU for monitoring each other's condition by checking whether the watch dog signals sent from the partner computer are normal or not, and when there is an abnormality in any computer, stopping the servo press for emergency. At least the first CPU (21) and the second CPU (22) (Set the input of the data and the calculation of a servo position command) send an AND signal of starting to start the servo press. At least a software language, the type or maker of CPU chip, power supply, or power voltage are different between the first CPU (21) and the second CPU (22). And the third CPU (23) (the calculation of a servo speed command) calculates and compares each slide position data from the input position signals of the two position sensors 17, 7 to execute an abnormal calibration of the two position sensors.
Patent TW-399196-B (TW)
Title: Image display device and display method
Inventor: KURASHINA HIROYASU
IPC: G06F3/0485
Filed: 1998-03-31
Granted: 2000-07-21
Abstract: Various commands and data are input to an image display device via an input block. The part or the whole of basic image data formed of a dot matrix is stored in a basic image data storage device of the image display device. A portion of the basic image data in a display range is converted to display image data to show the display image data on the display screen, in response to a corresponding one of the various commands input by the input block. From the input block, there are inputting a start command for starting an automatic scroll process in order to automatically and continuously shift the display range in a scrolling manner in a predetermined directions on the upward, downward, leftward and rightward sides of the basic image data, and a display range shift command for shifting, at a time point before a start of the automatic scroll process or during the automatic scroll process, the display range set at the time point, selectively in the upward, downward, leftward and rightward directions. When the start command is input, the automatic scroll is started, and when the display range shift command is input, the display image data is changed whereby resulting display image data is displayed on the display screen.
Patent TW-416135-B (TW)
Title: Non-volatile semiconductor device and manufacturing method thereof
Inventor: YOO JONG-WEON
IPC: H01L29/788
Filed: 1998-07-09
Granted: 2000-12-21
Abstract: The present invention relates to a non-volatile semiconductor device and manufacturing method thereof. The present invention is to improve an operation characteristic by forming together with a resistor having a stable resistance value, a capacitor having a stable capacitance value and a non-volatile memory cell when a chip having a flash memory therein is manufactured. The present invention provides a non-volatile semiconductor device comprising: a semiconductor substrate provided with a memory cell forming portion and a peripheral circuit forming portion; a non-volatile memory transistor for being accumulated a floating gate storing electrons therein and a control gate through an isolation layer and a tunneling isolation layer; a resistor line having the same material as the floating gate formed in a predetermined portion of the peripheral circuit forming portion; a first electrode terminal having the same material as the floating gate formed in the predetermined portion of the peripheral circuit forming portion to be isolated by a predetermined distance from the resistor line; and a capacitor for accumulating a second electrode terminal having the same material as the control gate through a dielectric film.
Patent TW-452584-B (TW)
Title: Epoxy resin composition and semiconductor devices using it as encapsulant
Inventor: FUJII MASANOBU
IPC: C08G59/24
Filed: 1998-09-25
Granted: 2001-09-01
Abstract: An epoxy resin composition comprising (A) a biphenyl epoxy resin, (B) a phenyl resin curing agent having a naphthalene structure, (C) a curing accelerator comprising an addition product of a triphenylphosphine and benzoquinone, and (D) an inorganic filler contained in an amount of 85 to 95% by weight based on the total amount of the composition, has good moldability and high reliability in use, and the semiconductor device encapsulated by this resin composition is minimized in warpage and therefore excels in various properties.
Patent TW-432262-B (TW)
Title: An incinerator and method of controlling thereof
Inventor: YAMAZAKI FUMIO
IPC: H01J9/20
Filed: 1998-10-08
Granted: 2001-05-01
Abstract: The present invention is to prevent the deterioration of burning quality of the burned object which is caused by the fluctuation of spread of internal temperature caused by the air flown into the incinerator. An inlet is provided in the clean room, and, in the incinerator disposed with an outlet in room of normal pressure having an atmosphere pressure lower than that of clean room, are disposed with a differential pressure gauge controller, inverter and an exhaust fan disposed inside the return duct, to detect the atmosphere pressure difference between the clean room and the room of the normal pressure with differential pressure gauge, the operation of the exhaust fan is controlled by the controller in response to said pressure difference to exhaust the amount of air flown in from the inlet out of the return duct, thus the air can be prevented from flowing into the incinerator.
Patent TW-416254-B (TW)
Title: Multi-branched matching method for network input/output
Inventor: WU SHANG-CHIEH
IPC: H04Q7/06
Filed: 1999-11-25
Granted: 2000-12-21
Abstract: A one-to-many branched matching method for network input/output that by increasing the number of buffers at the input and the speed of middle network, it can make one input simultaneously attempting to connect with multiple outputs so as to find a matching combination for one input to send data to multiple outputs respectively. The overall matching ratio of the system is depending on the status of the output but not limited to the input and the middle switching network. Therefore, the invention can effectively use the output and reach high percentage of matching in a very short period of time and the complexity for implementing the method is not high.
Patent TW-487577-B (TW)
Title: Face pack
Inventor: MOCHIZUKI MIYOKO
IPC: A61Q19/00
Filed: 1998-11-26
Granted: 2002-05-21
Abstract: A pack cosmetic which characteristically comprises dextrin. The present invention can provide an unprecedented superior pack cosmetic which gives high tension, adhesion, and a stretched feeling during use, is easy to remove, and can leave a superior moist feeling after removal. It can also provide a pack cosmetic which has a superior keratotic plug removal effect as well.
Patent TW-437007-B (TW)
Title: Method of forming fully depleted simox CMOS having electrostatic discharge protection
Inventor: HSU SHENG TENG
IPC: H01L27/092
Filed: 1998-12-11
Granted: 2001-05-28
Abstract: The formation of a fully-depleted, EDS protected CMOS device is described. The device is formed on an SOI or SIMOX substrate, over which an oxide pad is grown to a thickness of between 10 and 30 nm. Appropriate ions are implanted into the oxide to adjust the threshold voltage of an ESD transistor. A portion of the top silicon film is thinned to a thickness no greater than 50 nm. The fully depleted CMOS devices are fabricated onto the thinned top silicon film, while the ESD devices are fabricated onto the top silicon film having the original thickness.
Patent TW-440991-B (TW)
Title: Contact between a mono-crystalline silicon-region and a poly-crystalline silicon-structure and production-method for such a contact
Inventor: SCHREMS MARTIN
IPC: H01L21/265
Filed: 1998-12-29
Granted: 2001-06-16
Abstract: In order to generate a contact between a poly-crystalline silicon-structure and a mono-crystallien silicon-region (2, 20), it is designed to dope the silicon-structure in amorphous or poly-crystalline form and/or the mono-crystalline silicon-region with a dopant, especially with a dopant, in such a concentration that the solubility-limit is exceeded. In a following temperature-processing some dopant-precipitates are formed, said dopant-precipitates control the grain-growth in the poly-crystalline silicon-layer (4, 16), or prevent in the mono-crystalline silicon-region the spread of crystal-defects into the substrate. Such a contact can be especially used as a buried strip in a DRAM-trench-cell.
Patent TW-451602-B (TW)
Title: Circuit arrangement
Inventor: GRADZKI PAWEL MIROSLAW
IPC: H01J61/56
Filed: 1999-01-07
Granted: 2001-08-21
Abstract: The invention relates to a circuit arrangement for supplying a lamp with a DC lamp current comprising only passive components and equipped with mains input terminals for connection to poles of a supply voltage source, rectifying means, equipped with two input terminals, coupled to the mains input terminals, and two output terminals, for generating a DC voltage out of a low frequency AC voltage supplied by said supply voltage source, capacitive means, coupled between the mains input terminals and the output terminals of the rectifying means, a load circuit coupled to the output terminals of the rectifying means and comprising terminals for connection to the lamp, and inductive means. In accordance with the invention the load circuit is equipped with a series arrangement of only passive components, said series arrangement connecting the output terminals of the rectifying means and comprising the inductive means and the terminals for connection to the lamp. The circuit arrangement is simple and inexpensive and is very suitable for operating a discharge lamp and for being incorporated into a compact lamp.
Patent TW-442561-B (TW)
Title: Compositions of 1,1,1,3,3-pentafluoropropane and chlorinated ethylenes
Inventor: SWAN ELLEN L
IPC: C11D7/50
Filed: 1999-03-20
Granted: 2001-06-23
Abstract: The invention relates to novel compositions of 1,1,1,3,3-pentafluoropropane and chlorinated ethylenes and more particularly to azeotrope-like compositions based on these compounds which are useful as solvents in aerosol, refrigeration flushing, oxygen system cleaning and vapor degreasing applications.
Patent TW-419853-B (TW)
Title: Dielectric resonator, dielectric filter, dielectric duplexer, and communication device
Inventor: KUBOTA KAZUHIKO
IPC: H01P7/10
Filed: 1999-01-29
Granted: 2001-01-21
Abstract: A dielectric filter comprising a case having an electroconductivty, dielectric resonators each having electrodes formed on the opposite sides thereof disposed inside of the case, an ground plate disposed inside of the case, and external connecting means, at least one of the electrodes being a thin film multilayered electrode connected to said ground plate, wherein said ground plate is provided with protuberant portions, and each of the protuberant portions is connected to the side of the dielectric resonator on which the thin film multilayered electrode is formed, through the surface portion of the protuberant portion which is smaller than the range of the dielectric resonator defined by the side edge thereof.
Patent TW-I221212-B (TW)
Title: Photoimageable composition having improved flexibility
Inventor: BARR ROBERT K
IPC: G03F7/027
Filed: 1999-03-16
Granted: 2004-09-21
Abstract: The invention provides a negative-acting photoimageable composition comprising (A) between about 30 and about 80 wt% based on total weight of (A) plus (B) of a binder polymer having acid functionality sufficient to render said photoimageable composition developable in alkaline aqueous solution, (B) between about 20 and about 70 wt% based on total weight of (A) plus (B) of an addition-polymerizable, non-gaseous alpha,beta-ethylenically unsaturated compound(s) capable of forming a high polymer by free-radical initiated chain-propagating addition polymerization, at least about 50 mole percent of the alpha,beta-ethylenically unsaturated moieties of (B) being methacrylic moieties, and (C) between about 0.1 and about 20 wt% based on total weigh of (A) plus (B) of a photoinitiator chemical system. Photopolymerizable component B comprises, at between about 1 and about 70 wt% relative to total of (A) plus (B), a urethane oligomer having, in addition to alpha,beta-ethylenic unsaturation, carboxylic acid functionality.
Patent TW-422988-B (TW)
Title: Non-volatile semiconductor storage device
Inventor: UEKUBO MASAKI
IPC: G11C16/28
Filed: 1999-04-27
Granted: 2001-02-21
Abstract: An electrically erasable and programmable non-volatile semiconductor storage device that data is read out comparing the output of a memory cell and the output of a reference cell by a sense amplifier. In this device, the reference cell is built in so that it has a given threshold voltage value, and the gate voltage of the memory cell and the gate voltage of the reference cell are allowed to be set independently.
Patent TW-405258-B (TW)
Title: Manufacture method of DRAM capacitor
Inventor: LUO JI-JIN
IPC: H01L21/02
Filed: 1999-04-30
Granted: 2000-09-11
Abstract: A method of manufacturing the DRAM capacitor provided by this invention comprises the steps of: forming the contact hole on the substrate; forming the silicon contact region to fill up the contact hole; forming the aluminum layer on said substrate and said silicon contact region in order and forming a titanium layer on said aluminum layer; proceeding a thermal annealing procedure to let the aluminum atom in the aluminum layer replace the silicon atom in the silicon contact region in a solid phase thereby forming the aluminum contact region in the contact hole, wherein the replaced silicon atom could move upwardly and penetrate through the aluminum layer and react with the titanium layer to produce the titanium silicide layer on the bottom surface of the titanium layer; forming the first conductive layer on the upper surface of the substrate and the aluminum contact region as the bottom electrode; forming the dielectrics on the surface of said first conductive layer; and forming the second conductive layer on the surface of said dielectrics as the top electrode.
Patent TW-I235159-B (TW)
Title: Anti-human hemoglobin monoclonal antibodies for detecting fecal occult blood, producing hybridomas and uses thereof
Inventor: MA JENG
IPC: G01N33/72
Filed: 1999-06-30
Granted: 2005-07-01
Abstract: The invention provides monoclonal antibodies specific to human hemoglobin, producing hybridomas thereof, and the use of the antibodies in detecting fecal occult blood.
Patent TW-497257-B (TW)
Title: Nonvolatile memory device and manufacturing method therefor
Inventor: KIM JONG-HAN
IPC: H01L29/788
Filed: 1999-07-05
Granted: 2002-08-01
Abstract: A nonvolatile memory device and a manufacturing method therefor are provided. The nonvolatile memory device includes source pad lines connecting source regions of neighboring cells, parallel to word lines. Thus, the number of common source lines necessary for the overall cell array area can be reduced. Also, the distance between a word line and a contact hole is minimized by providing self-aligned bit line contact holes, thereby minimizing the size of a cell array area.
Patent TW-418530-B (TW)
Title: Manufacturing method and structure for stack capacitor
Inventor: LUO JI-JIN
IPC: H01L27/108
Filed: 1999-08-13
Granted: 2001-01-11
Abstract: A manufacturing method and structure for a stack capacitor which is used for the nitrification process to the surface of the silicon oxide for forming the contact of storage node; forming a storage node on the silicon oxide which is stacked by a thicker metal barrier and an extremely thin metal layer; then, forming the metal spacer on the sidewall of storage node; then, forming in turn the capacitor dielectric layer having a high dielectric constant and the upper electrode of the capacitor.
Patent TW-443020-B (TW)
Title: Durable etalon based output coupler
Inventor: ERSHOV ALEXANDER I
IPC: H01S3/098
Filed: 1999-12-15
Granted: 2001-06-23
Abstract: A durable etalon based laser output coupler. The output coupler is especially useful for ultraviolet lasers such as an ArF excimer laser or an F2 laser. The principal elements of the etalon based output coupler are two prisms aligned so that a first surface of one of the two prisms is parallel to a first surface of the other prism. The first of the two prisms have a second surface forming an angle with a beam from a laser cavity equal to or approximately equal to Brewster's angle. The second of the two prisms has a second surface forming an angle with the coupler exit beam equal to or approximately equal to Brewster's angle. Preferably, the prisms are comprised of CaF2 and surrounded by nitrogen at about one atmosphere. Assuming the laser beam is at a wavelength of 193 nm (for ArF excimer laser). Brewster's angle is about 57 degrees and each of the first and second surfaces define an apex angle of about 34 degrees. In a preferred embodiment, the device is used as an output coupler for line narrowed ArF excimer laser having a diffraction grating based line narrowing module. The etalon based output coupler is adjusted to preferentially reflect light at or near the spectral maximum produced by the grating. Substantial improvement in line narrowing results from the amplification in the laser resonance chamber of light at or near the grating spectral maximum which is preferentially reflected by the etalon based output coupler. Several preferred methods are disclosed for tuning the etalon based output coupler to match the wavelength selected by the grating based line narrowing module.
Patent TW-453028-B (TW)
Title: Edge reflection type surface acoustic wave device
Inventor: KADOTA MICHIO
IPC: H03H9/145
Filed: 2000-02-03
Granted: 2001-09-01
Abstract: An edge reflection type surface acoustic wave device includes a surface acoustic wave substrate having an opposing pair of edges and at least one interdigital transducer located on the surface acoustic wave substrate. A Shear Horizontal type surface acoustic wave is generated by the interdigital transducer and reflected between the opposing pair of edges. The interdigital transducer is divided into a plurality of sub-IDT portions along a surface acoustic wave-propagating direction. Electrode fingers of the interdigital transducer which are closest to each other between adjacent sub-IDT portions are at the same potential so as not to be excited between the adjacent sub-IDT portions. In addition, when it is assumed that the widths of the outermost electrode fingers in the surface acoustic wave-propagating direction of the interdigital transducer are equal to the widths of the remaining electrode fingers before cutting of the substrate, the edges are arranged such that the edges are cut at a location inside of the center of the outermost electrode fingers in the surface acoustic wave-propagating direction such that a distance between the opposite edges of the substrate is not an integral multiple of λ0/2.
Patent TW-494067-B (TW)
Title: Manufacturing method for hand-writing pen and the structure thereof
Inventor: LIOU RUNG-TSAN
IPC: B43K19/00
Filed: 2000-03-07
Granted: 2002-07-11
Abstract: The present invention is a manufacturing method for hand-writing pen and the structure thereof. The method includes the following steps: forming the desired shape of solid penholder with required shape by metal material, wherein one end of the penholder is inserted with a penpoint made of a particular material, and the other end is configured with a positioning pin with dash line; and, the section for a certain area of the penholder is made with different shape as the penholder; after placing the penholder in the mold, clamping the positioning pin against the penpoint and the penholder respectively by the fixture; when injecting the plastic into the mold for forming, the penholder is fixed at a specific position in the mold, so that the plastic can completely cover the perimeter of the penholder and the intersection of the penholder and the penpoint; and further combining the penholder, the penpoint and the covering around the penholder as a whole; rubbing the non-circular area of the penholder section with the covering body to make the user easily breaking at the intersection of the positioning pin and the penholder, and leveling the remaining mold hole with plastic, so as to obtain a hand-writing pen with a suitable holding weight and easy for the user to hold and write.