baber/WOPTO huggingface dataset:
Patent TW-I243085-B (TW)
Title: Apparatus for polishing a semiconductor wafer and method therefor
Inventor: BOO JAE-PHIL
IPC: H01L21/304
Filed: 2001-07-03
Granted: 2005-11-11
Abstract: An apparatus for polishing a water comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber. The first chamber is in communication with the other one of the two fluid passages and the first holes are formed in the lower surface portion of the supporter to communicate with the first chamber. The lower surface portion of the supporter has a flat surface and a chamfered or rounded edge. The membrane disposed to enclose the lower surface portion of the supporter has a plurality of third holes formed at positions corresponding to the first holes to absorb and hold the wafer by vacuum.
Patent TW-I237802-B (TW)
Title: Driving method of an electric circuit
Inventor: TANAKA YUKIO
IPC: H04N5/66
Filed: 2001-07-12
Granted: 2005-08-11
Abstract: A variation in threshold may be suppressed by structuring an analog switch by a MOS transistor and forming a signal synchronized to a clock by making the clock which is a common signal in continuity or discontinuity. An object of the present invention is to reduce the variation in the signal synchronized to the clock by the variation in threshold of the MOS transistor in a circuit which is synchronized to the clock.
Patent TW-I259217-B (TW)
Title: High dielectric constant metal silicates formed by controlled metal-surface reactions
Inventor: PARSONS GREGORY N
IPC: C23C26/00
Filed: 2001-07-20
Granted: 2006-08-01
Abstract: A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound and oxygen to form an insulation layer or the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.
Patent TW-503677-B (TW)
Title: Laser processing apparatus
Inventor: SAKAMOTO MASAHIKO
IPC: B23K26/06
Filed: 2001-08-03
Granted: 2002-09-21
Abstract: The present invention provides a laser processing apparatus, which comprises: a laser oscillator for emitting a laser beam, a main deflection galvano-mirror, an Fθ lens, and an auxiliary deflection means disposed in the optical path between the laser oscillator and the main deflection galvano-mirror. It further comprises means for splitting the laser beam. The auxiliary deflection means is inserted into an optical path of one split laser beam. The two laser beams are directed from the same main deflection galvano-mirror to the Fθ lens. The numerical aperture in the optical path system of the main deflection galvano-mirror, the Fθ lens and a work is 0.08 or more.
Patent TW-495969-B (TW)
Title: MRAM with an effective noise countermeasure
Inventor: ONO HIROSHI
IPC: H01L23/16
Filed: 2001-08-16
Granted: 2002-07-21
Abstract: In a magnetic random access memory has a memory device portion (33, 34, 35) using magnetic material, a high-frequency current suppressor (26) is arranged in the vicinity of the magnetic material to suppress a high-frequency current which flows in the memory device portion. The memory device and the high-frequency current suppressor may be collectively molded in a mold body (25) of a plastic resin. It is preferable that the high-frequency current suppressor is made by a thin film of a granular magnetic material which has a composition represented by M-X-Y where M is a magnetic metal element, Y is one element selected from oxygen, nitrogen, and fluorine, and X is an element other than M and Y.
Patent TW-518847-B (TW)
Title: Symbol timing recovery method for low resolution multiple amplitude signals
Inventor: BOCCUZZI JOSEPH
IPC: H04L7/02
Filed: 2001-10-05
Granted: 2003-01-21
Abstract: Symbol timing is performed by providing a histogram of samples of a signal for a predetermined number of symbol times. An average, weighted average, or other method is applied to determine an average timing for a max eye opening for each symbol time. The average max eye opening timing is applied to an edge detection of a currently received signal to determine timing of a sample that is most likely to occur closest to the max eye opening for the current symbol. The invention may also be practiced based on a center timing of each symbol.
Patent TW-I228639-B (TW)
Title: Positive type photosensitive epoxy resin composition and printed circuit board using the same
Inventor: SUGANO YASUAKI
IPC: G03F7/038
Filed: 2001-10-16
Granted: 2005-03-01
Abstract: A positive type, photosensitive epoxy resin composition comprising (a) an epoxy resin having two or more epoxy groups in one molecule, (b) a modified phenolic resin having a triazine ring, (c) a latent basic curing agent and (d) a photosensitive acid generator; and a preferably multilayered printed circuit board of buildup mode using said composition as an insulating layer.
Patent TW-526434-B (TW)
Title: Context sensitive labels for an electronic device
Inventor: VONG WILLIAM H
IPC: G06F3/0489
Filed: 2001-10-31
Granted: 2003-04-01
Abstract: A control panel unit for a computing device includes buttons having characteristics that define individual button states. Upon actuation of a button, the viewable states of the buttons may change. A portion of the button may be illuminated to represent the state and/or include an icon depicting an application controlled by the button. The control panel unit may include a display for displaying plural soft labels corresponding to the buttons and representing the current context that will be initiated when the corresponding button is actuated. The soft labels may identify users or applications available to one user. Upon actuation of an application, the soft labels can change to represent various actions or functions available in the application. In the user interface, each user may be assigned a specific color scheme. The color schemes allow a person to visually determine who is logged into the system and/or which individual has new information.
Patent TW-535397-B (TW)
Title: Lightweight dual-mode mobile scanner powered from a universal serial bus port
Inventor: HU DARWIN
IPC: H04N1/04
Filed: 2001-11-01
Granted: 2003-06-01
Abstract: A portable scanner device capable of being powered through a universal serial bus connection where the individual components of the portable scanner are selectively and controllably powered without appreciable degradation of a captured image whether that image resides on a transparent media (i.e., a negative) or an opaque media (i.e., paper) is described. Calibration procedures in the portable scanner device are initiated in a computing device to which generated image signals are transported via the universal serial bus connection.
Patent TW-499392-B (TW)
Title: Pneumatic microfluidic driving system and method thereof
Inventor: LIN YU-CHENG
IPC: F04B19/00
Filed: 2001-05-11
Granted: 2002-08-21
Abstract: The present invention provides a pneumatic microfluidic driving system which at least comprises: a servo device to provide various different combination modes of air flow group; a set of air lane structure built on the micro-reaction module to receive said air flow; a connection channel constructed in the microreaction module together to connect said air lane structure and the reaction region on the microreaction module as the passage of air flow. The driving method of the pneumatic microfluidic of the present invention utilizes various combination modes of air flow group with different flowing rates and emission directions provided by said servo device, when different modes of air flow group combination flow into the air lane structure in the module, the fluid (sample/reagent) in the microfluidic channel of the microreaction chamber is driven to have delicate movement effects such as induction, repulsion, stopping, etc., which is especially suitable to be applied in various microreaction module for biochemical investigation operation, and it also can simplify the process and reduce the cost.
Patent TW-I243485-B (TW)
Title: Lateral polysilicon pin diode and method for so fabricating
Inventor: GREENBERG DAVID R
IPC: H01L29/868
Filed: 2001-12-07
Granted: 2005-11-11
Abstract: The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.
Patent TW-513742-B (TW)
Title: Semiconductor device, method for manufacturing the same, and liquid jet apparatus
Inventor: SHIMOTSUSA MINEO
IPC: H01L29/423
Filed: 2001-12-27
Granted: 2002-12-11
Abstract: In a semiconductor device in which a plurality of electro-thermal conversion elements and a plurality of switching devices for flowing electric currents through the plural electro-thermal conversion elements are integrated on a first conductive type semiconductor substrate, the switching devices are insulated gate type field effect transistors severally comprising: a second conductive type first semiconductor region formed on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region, the second semiconductor region being formed to adjoin the first semiconductor region; a second conductive type source region formed on the surface side of the second semiconductor region; a second conductive type drain region formed on the surface side of the first semiconductor region; and gate electrodes formed on the channel region with a gate insulator film put between them; and the second semiconductor region is formed by a semiconductor having a impurity concentration higher than that of the first semiconductor region, the second semiconductor region being disposed between two of the drain regions arranged side by side so as to separate the drain regions in a traverse direction.
Patent TW-544845-B (TW)
Title: Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics
Inventor: GATES STEPHEN MCCONNELL
IPC: H01L23/522
Filed: 2002-02-25
Granted: 2003-08-01
Abstract: A low-k dielectric metal conductor interconnect structure having no micro-trenches present therein and a method of forming such a structure are provided. Specifically, the above structure is achieved by providing an interconnect structure which includes at least a multilayer of dielectric materials which are applied sequentially in a single spin apply tool and then cured in a single step and a plurality of patterned metal conductors within the multilayer of spun-on dielectrics. The control over the conductor resistance is obtained using a buried etch stop layer having a second atomic composition located between the line and via dielectric layers of porous low-k dielectrics having a first atomic composition. The inventive interconnect structure also includes a hard mask which assists in forming the interconnect structure of the dual damascene-type. The first and second composition are selected to obtain etch selectivity of at least 10 to 1 or higher, and are selected from specific groups of porous low-k organic or inorganic materials with specific atomic compositions and other discoverable quantities.
Patent TW-584847-B (TW)
Title: Recording/reproducing device
Inventor: KOBAYASHI SHOEI
IPC: G11B27/24
Filed: 2002-02-26
Granted: 2004-04-21
Abstract: The present invention relates to a recording/reproducing apparatus and a program suitable for use to record or reproduce data onto or from an optical disk having two recording layers on one side thereof. In an optical disk which has, on one side thereof, two layers including a recording film L0 layer in an unformatted state and another recording film L1 layer in a formatted state, the recording film L0 layer is formatted with marks in step S1, and formation of marks corresponding to the recording data is started beginning with the recording film L0 layer in step S2. After the recording film L0 layer is used up, marks corresponding to the recording data are formed on the recording film L1 layer in step S3. The present invention can be applied, for example, to a DVD player.
Patent TW-I258501-B (TW)
Title: Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
Inventor: WOJTCZAK WILLIAM A
IPC: C11D7/10
Filed: 2002-03-27
Granted: 2006-07-21
Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. Fluoride source, 20-55% wt. Organic amine(s), 0.5-40% wt. Nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. Water, and 0-21% wt. Metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
Patent TW-I274306-B (TW)
Title: Plasma display panel and driving method thereof
Inventor: KOO BON-CHEOL
IPC: G09G3/00
Filed: 2002-04-26
Granted: 2007-02-21
Abstract: A plasma display panel and a driving method thereof that is capable of generating a sinusoidal initialization waveform. In the panel, a sinusoidal wave is used for forming wall charges.
Patent TW-560241-B (TW)
Title: Printed circuit board mounted connector
Inventor: OKAMOTO TOSHIMUNE
IPC: H01R12/50
Filed: 2002-05-10
Granted: 2003-11-01
Abstract: A printed circuit board mounted connector has a metal housing (20) defining, at one end thereof, a connecting opening (21) for receiving a mating connector. The metal housing includes a pair of right and left side walls (20a) and at least one horizontal wall (20b) interconnecting the side walls. The side walls and said horizontal wall together enclose a board segment (11) having a terminal land (11a) which is formed at a portion of a printed circuit board (10) and which also is capable of directly contacting the mating connector. A fixing piece (23) extends from each side wall (20a), the fixing piece having an attaching face (23a) which is to be placed on and solder-fixed to a solder attaching land (15) formed on the circuit board (10). At least one clamping part (24) is arranged on each side wall to clamp the surface and back of the printed circuit board.
Patent TW-574765-B (TW)
Title: Method of manufacturing flat antenna
Inventor: TAKABA SHINICHI
IPC: H01Q1/36
Filed: 2002-06-12
Granted: 2004-02-01
Abstract: A method of manufacturing a flat antenna is composed of the steps of entirely applying Ni plating to the front and back surfaces of a long metal sheet, bonding masking tapes to the front surface of the metal sheet where the Ni plating has been applied except two stripe regions, applying Au plating to the two stripe regions by dipping the metal sheet into an Au plating solution, making a plurality of conductive flat sheets by punching the metal sheet to a plurality of regions along the lengthwise direction thereof after exfoliating the masking tapes, and bending the portions of each conductive flat sheet acting as a power feed terminal and a ground terminal. The metal sheet can be simply masked by bonding a plurality of the masking tapes thereto linearly except the regions where the plating is to be applied, thereby the productivity of the flat antenna can be increased. <IMAGE>   <IMAGE>   <IMAGE>   <IMAGE>
Patent TW-558759-B (TW)
Title: Method of forming and etching resistor protection oxide layer
Inventor: CHEN YAN-MING
IPC: H01L21/311
Filed: 2002-07-02
Granted: 2003-10-21
Abstract: This invention provides a kind of method for forming and etching resistor protection oxide layer (RPO layer) with bi-layer structure. Firstly, an RPO layer is deposited onto a semiconductor structure containing a semiconductor substrate, in which the RPO layer has a first layer formed on the semiconductor structure and a second layer formed on the first layer. Then, a photoresist mask is formed on the RPO layer and a first etching liquid with high etch selectivity with respect to the bi-layer structure of the RPO is used to etch the second layer of the RPO layer. Subsequently, a second etching liquid is used to etch the first layer of the RPO layer to form contact openings on the region where there is no photoresist mask coverage. The photoresist mask is then removed and a self-aligned silicide (salicide) performed to form salicide region in the contact openings. Therefore, yield of the subsequent salicide process and performance of the produced chip can be increased.
Patent TW-552663-B (TW)
Title: Substrate support pedestal
Inventor: KHOLODENKO ARNOLD V
IPC: H01L21/683
Filed: 2002-07-10
Granted: 2003-09-11
Abstract: A ceramic substrate support and methods for fabricating the same are provided. In one embodiment, a ceramic substrate support for supporting a substrate includes a ceramic body and a porous member disposed therein. The ceramic body generally has an upper portion and a lower portion. The upper portion includes a support surface while the lower portion includes a bottom surface. At least one passage is disposed in the lower portion of the ceramic body. A first end of the passage is at least partially closed by the upper portion of the ceramic body. At least one outlet is disposed through the portion of the ceramic body through the upper portion of the ceramic body and fluidly couples the passage to the support surface.
Patent TW-540257-B (TW)
Title: Component of printed circuit boards
Inventor: STEINER R RICHARD
IPC: H05K3/02
Filed: 2002-07-12
Granted: 2003-07-01
Abstract: A component for use in manufacturing articles such as printed circuit boards having a sheet of copper foil and a metal sheet. One surface of each of the copper sheet and the metal sheet are essentially uncontaminated and engageable with each other at an interface. The copper sheet and the metal sheet are maintained together to define an unjoined and substantially uncontaminated central zone inwardly of the edges of the sheets. A bond is formed between the copper sheet and the metallic sheet along the peripheral edges thereof. The bond has sufficient adhesive strength to maintain the sheets together during manual handling of the component at room temperatures. The bond is temperature-sensitive, wherein the bond deteriorates when exposed to temperatures in excess of about 180 DEG F (about 82 DEG C).
Patent TW-565854-B (TW)
Title: Actuating circuit for sense amplifiers
Inventor: SCHNEIDER HELMUT
IPC: G11C7/08
Filed: 2002-07-15
Granted: 2003-12-11
Abstract: A circuit section which is provided for generating control signals and for supplying them to the sense amplifiers is constructed using generating circuits as in the appended figure. The generating circuits are arranged adjacently to the sense amplifiers within the memory cell array and generate control signals which they supply to the sense amplifiers directly in situ, with the exception of a particular number of global control signals. Preferably, the generating circuits are arranged in the areas of the memory cell array in which strips with sense amplifiers and word line drivers overlap.
Patent TW-533188-B (TW)
Title: Support for microelectronic, microoptoelectronic or micromechanical devices
Inventor: AMIOTTI MARCO
IPC: B81B3/00
Filed: 2002-07-12
Granted: 2003-05-21
Abstract: The invention is about a support for the production of microelectronic, microoptoelectronic or micromechanical devices. Said support (10; 60) comprises a base (11; 61) having the function of backing element, on which is deposited a gas absorbing material in form of discrete deposits (13, 13', ...; 63, 63', ...) that are at least partially exposed to the atmosphere present around said support (10; 60).
Patent TW-593538-B (TW)
Title: Polycarbonate resin composition, molded article and process for producing it
Inventor: MITSUNAGA MASAKI
IPC: C08L69/00
Filed: 2002-07-23
Granted: 2004-06-21
Abstract: The present invention relates to a thermoplastic resin composition comprising (A) 100 parts by weight of an amorphous thermoplastic resin composition (component A), (B) 0.1 to 50 parts by weight lamellar silicate (component B) which satisfies the following (i) to (iii), (i) having a cation exchange capacity of 50 to 200 meq/100 g and at least 40% thereof is exchanged by an organic onium ion, (ii) in the resin composition, a numeral proportion of 60% or more having thickness of less than 100 nm, and (iii) in the resin composition, the bottom space of the lamellar silicate (component B) is smaller than the bottom space of the single lamellar silicate by 0.5 nm or more, and (C) 0 to 50 parts by weight of compound (component C) having hydrophilic property to the component A and having hydrophilic component, and to a molded article produced therefrom. According to the present invention, an amorphous thermoplastic resin composition, especially a polycarbonate resin composition, and a molded article produced therefrom having good rigidity, surface appearance and thermal stability can be obtained.
Patent TW-593378-B (TW)
Title: Vanadium-imidoaryl complexes for the polymerization of olefins
Inventor: ARNDT-ROSENAU MICHAEL
IPC: C08F10/00
Filed: 2002-08-14
Granted: 2004-06-21
Abstract: The present invention relates to vanadium-imidoaryl compounds having electron-withdrawing substituents at the aryl group, to compositions containing vanadium-imidoaryl compounds having electron-withdrawing substituents at the aryl group, which compositions are suitable especially as catalysts for the polymerization of olefins, such as for ethene/propene or ethene/alpha-olefin copolymerization and the terpolymerization of those monomers with dienes.
Patent TW-556310-B (TW)
Title: Method of fabricating a high-density capacitor
Inventor: TSAI TENG-CHUN
IPC: H01L29/92
Filed: 2002-09-05
Granted: 2003-10-01
Abstract: A method of fabricating a high-density capacitor is provided. At least a first trench is formed in a dielectric layer positioned on a semiconductor substrate. A first liner layer and a first conductive layer are formed on the semiconductor substrate followed by a first planarization process. At least a second trench is formed in the dielectric layer, the second trench having a joint side wall with the first trench. A capacitor dielectric layer, a second liner layer, and a second conductive layer are formed on the semiconductor substrate followed by a second planarization process. The surfaces of the first conductive layer and the second conductive layer are then exposed to form a high-density capacitor having a three-dimensional structure.