Patent SG-11201808542W-A (SG)
Title: Colloidal silica growth inhibitor and associated method and system
Inventor: ROTONDARO ANTONIO L
IPC: C09K13/04
Filed: 2017-03-24
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 11M1111101110101011111 HO 111110111 0101111111011001011111111111110111111 International Bureau ... .... ..Yjd (10) International Publication Number (43) International Publication Date ..... ....r;,' WO 2017/172532 Al 5 October 2017 (05.10.2017) IN I PO I P CT (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) (71) Applicant International Patent Classification: (74) Agent: MADRIAGA, Manuel B.; Tokyo Electron U.S. C09K 13/04 (2006.01) CO9K 13/06 (2006.01) Holdings, Inc., 2400 Grove Boulevard, Austin, Texas 78741 (US). International Application Number: PCT/US2017/024123 (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, 24 March 2017 (24.03.2017) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, English DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, English KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, Priority Data: MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, 62/315,632 30 March 2016 (30.03.2016) US NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, 62/315,559 30 March 2016 (30.03.2016) US RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, 15/467,939 23 March 2017 (23.03.2017) US TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, 15/467,973 23 March 2017 (23.03.2017) US ZA, ZM, ZW. Applicant: TOKYO ELECTRON LIMITED [JP/JP]; (84) Designated States (unless otherwise indicated, for every Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, kind of regional protection available): ARIPO (BW, GH, Tokyo 107-6325 (JP). GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (for JP only): TOKYO ELECTRON U.S. TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, HOLDINGS, INC. [US/US]; 2400 Grove Boulevard, Aus- DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, tin, Texas 78741 (US). LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Inventors: ROTONDARO, Antonio L., P.; 12828 Texas SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Sage Ct., Austin, Texas 78732 (US). PRINTZ, Wallace GW, KM, ML, MR, NE, SN, TD, TG). P.; 8933 Lanna Bluff Loop, Austin, Texas 78749 (US). [Continued on next page] (72) = Title: FIG. 602- 604 -\‘‘, 606 -, 610 \ 612 „, 614 (54) N \ COLLOIDAL SILICA GROWTH INHIBITOR 6 , ,-600 AND ASSOCIATED METHOD AND SYSTEM (57) : A technique to inhibit the growth of colloidal silica depos - its on surfaces treated in phosphoric acid is described. In one embodi - ment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solu- tion. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces. DETERMINE THICKNESS PROFILE OF FILM TO BE REMOVED 1 DETERMINE SELECTIVITY NEEDED TO COMPENSATE FOR FILM THICKNESS PROFILE 1 DETERMINE SILICA CONTENT NEEDED TO ACHIEVE DESIRED SELECTIVITY PROFILE 608 \ PROVIDE H3PO4, SILICA AND CSGI GIVEN TEMPERATURE, CONCENTRATION AND FLOW CO-DISPENSE H3PO4, SILICAAND CSGI TO THE WAFER SURFACE 11 Cr) kr) ei IN ,-1 IN ,-1 © ei MONITOR H3PO4, SILICAAND CSGI TEMPERATURE, CONCENTRATION AND FLOW CONTROL H3PO4, SILICAAND CSGI TEMPERATURE, CONCENTRATION AND FLOW TO ACHIEVE DESIRED SELECTIVITY PROFILE WITHOUT COLLOIDAL SILICA GROWTH O WO 2017/172532 Al MIDEDIM000101011101010M01001111101110110E011111VOIS Published: — with international search report (Art. 21(3))