baber/WOPTO huggingface dataset:
Patent TW-392200-B (TW)
Title: Electronic and electrical components and substrate treatment devices used in a clean room
Inventor: KOBAYASHI SADAO
IPC: C08K5/00
Filed: 1998-03-24
Granted: 2000-06-01
Abstract: This invention provides electronic and electric components used in a clean room, particularly, electronic and electric components used in a cleaning room for treatment of substrates and control of the environment thereof during the production of semiconductor devices, wherein the electronic and electric components comprises a resin substrate and additives added to the resin substrate. The additives comprises an anti-static agent formed of a non-ionic compound having a molecular weight of greater than 350, an anti-oxidant formed of a phenolic compound having a molecular weight of greater than 300, and more than one or two agents selected from the group consisting of a lubricant, a plasticiser, a flame-retardant, and a water repellant. The additives do not release any gaseous organic component from the resin substrate under a used condition.
Patent TW-388004-B (TW)
Title: Alternating phase shift mask
Inventor: HUANG JIAN-JAU
IPC: G03F1/30
Filed: 1998-04-03
Granted: 2000-04-21
Abstract: An alternating phase shift mask comprises a phase shift layer formed between a light-penetrable substrate and a masking layer such that the phase shift layer covers phase shift region on the light-penetrable substrate and masked region. The masking layer is formed on the phase shift layer. The section of the light-penetrable substrate exposed by the phase shift layer and the masking layer is defined as a penetrating region. Incident light results in a phase angle of 180 DEG in the penetrating region and the masking layer to make constructive interference and to enhance the resolution of photolithographic process.
Patent TW-394899-B (TW)
Title: Computer file name searching system
Inventor: JAU GUO-REN
IPC: G06F9/34
Filed: 1998-04-27
Granted: 2000-06-21
Abstract: A file name searching system seeks the file name and path of each file stored in the hard disk drive. This file name searching system includes a data file, an index data file, and a searching program. The data file with file name is used to record the names of all files and directories in the hard disk drive. The index data file records the path data of each file in this file-name data file. The searching program sets the searching conditions offered by users to search the articles according to these searching conditions in this file-name data file base. The index data file prints out each path data catering to the searching conditions. The system takes advantage of prebuilt file-name data file and index data file to locate all the data in the hard disk drive so that the searching time in locating each file stored in the hard disk drive can be dramatically reduced.
Patent TW-445383-B (TW)
Title: Optical waveguide attenuating device and method for producing the same
Inventor: BURKE GERALD EUGENE
IPC: G02B6/02
Filed: 1998-07-27
Granted: 2001-07-11
Abstract: A method for making an optical attenuating device comprising an optical waveguide having a core doped with a transition metal and a cladding. The transition metal is deposited in the core during a core blankmaking process. The transition metal doped core is exposed to gaseous hydrogen in a furnace to significantly increase the attenuation of the device.
Patent TW-382114-B (TW)
Title: Probe apparatus for display panel and probe positioning method
Inventor: HAYASHIDA MANABU
IPC: G01R1/073
Filed: 1998-08-20
Granted: 2000-02-11
Abstract: A probe apparatus comprises a plurality of actuators connected to a plurality of probe units. The probe apparatus can be adapted to different display panels which has a plurality of electrode terminal arranged in a special pitch without the need to provide additional probe units. Therefore, the probe apparatus can realize multi-purpose application and low operating cost and the probe apparatus can make the electrode terminal properly aligned with the probes so as to enhance test accuracy for sorting out defective defected product. A probe positioning method is also disclosed in the invention.
Patent TW-385614-B (TW)
Title: Decoding method and decoder for decoding audio/video compressed code data
Inventor: IGANAMI CHIHO
IPC: H04N21/2368
Filed: 1998-11-05
Granted: 2000-03-21
Abstract: The present invention provides an MPEG decoder which prevents user data, which is in video code data of MPEG-compressed code data, from being overwritten by the next code data before a CPU reads the user data. The MPEG decoder has an audio/video separator 3 and a memory. The audio/video separator 3 has a start code detector 11 which, in turn, has a start code start address register 12 and a start code register 13. When the MPEG decoder receives compressed code data, the start the code detector 11 searches the compressed code data for a start code specified by the start code register 13 and stores the start address of the start code into the start code start address register 12.
Patent TW-418275-B (TW)
Title: Skeleton of light partition wall and its construction method
Inventor: LIN MING-JANG
IPC: E04B2/86
Filed: 1998-11-10
Granted: 2001-01-11
Abstract: This is an invention of skeleton of light partition wall and its construction method to ensure quick assembling work. The skeleton has vertical frames with two fixation planes to allow hammering in screw rivets to fasten slabs to vertical frames; therefore, forms of light partition wall are ready for later grouting work. The screw rivets are to be hammering through the two planes to fix the slabs so enough tension between vertical frames and slabs will be ensured to against possible pressure.
Patent TW-390084-B (TW)
Title: The reverse direction synchronization setting method of the movable communication system and the reverse direc-tion synchronization transmission method using the same
Inventor: HONG EEN-KEE
IPC: H04W56/00
Filed: 1998-11-13
Granted: 2000-05-11
Abstract: The present invention relates to the reverse direction synchronization setting method of the movable communication system and the reverse direction synchronization transmission method using that method. It uses orthogonal symbols to distinguish reverse direction channels. And after adjusting transmission timings and setting synchronization according to the synchronization control messages received from the original control channel, it can adjust transmission timing based on the synchronization control messages received from the communication channels, and it can increase the number of receivable channels in the same cell based on the synchronization setting of the revers direction channels. In addition, when attaching pseudo noise symbols and orthogonal symbols to distinguish reverse direction channels, it can reduce the related values of the orthogonal symbols, and improve the quality of communications.
Patent TW-546337-B (TW)
Title: A thermoplastic polymeric material having improved compatibility with aqueous peracids and its use in forming oxidant stable containers
Inventor: VANDEVIJVER ERIC
IPC: B65D65/38
Filed: 1998-11-21
Granted: 2003-08-11
Abstract: The present invention relates to containers or linings formed from thermoplastic polymeric materials which are suitable for use in transport and storage of aqueous oxidising agents and to the thermoplastic polymeric materials themselves. The thermoplastic polymeric materials such as polyethylene, forming the container or linings are stabilised against embrittlement caused by interaction with the peracid solutions they contact by the incorporation of a thioether and preferably a hindered phenol anti-oxidant. The thioether particularly comprises additionally a hindered phenol and is, for example, a thiobisphenol. The stored peracid solutions exhibited improved storage stability. The containers or linings are particularly suitable for storing or transporting aqueous peracid solutions in locations enjoying relatively high ambient temperatures.
Patent TW-439241-B (TW)
Title: Stacked chip package
Inventor: TZ JUNG-SHING
IPC: H01L23/495
Filed: 1998-12-15
Granted: 2001-06-07
Abstract: The present invention is a stacked chip package having a first chip and a second chip stackedly formed on a lead frame, wherein the first chip is adhered to the second chip through silver glue or non-conductive glue to form a stacked structure. When the interconnect is located on the chip, the stacked structure formed by the first and the second chips are adhered to the lead frame through an insulating adhering tape. The central portion of the lead frame has a structure recessed downward to load this stacked structure and diminish the volume of the packaging body. The interconnect extends to the first chip to become a ""lead on chip"" (LOC) structure. When the bonding pad of the first chip and the second chip are both located on the center of the chip, since the bonding pad of the second chip is further away from the interconnect, a supporting member is used by the present invention to support the second set of bonding wires. However, due to the improvement of the bonding wire, it is possible to support the second set of bonding wires without using the supporting member. Finally, the device is wrapped by sealing glue to form a complete package body. In addition, when the bonding pad of the first chip and the second chip are both located on the periphery of the chip, and when the interconnect is also located around the chip, supporting rods are used by the present invention to adhere to the stacked structure formed by the first chip and the second chip.
Patent TW-477119-B (TW)
Title: Byte allocation method and device for speech synthesis
Inventor: CHEN WEN-YUAN
IPC: G10L19/035
Filed: 1999-01-28
Granted: 2002-02-21
Abstract: The present invention provides a byte allocation method and device for speech synthesis, which generates a specific number of quantization levels by quantizing a plurality of signal-to-mask ratios. The quantization levels correspond to an allocation byte number, a quantized signal-to-mask ratio and a sampled number, respectively. Then, the allocation byte number is initialized, and, based on the allocation byte number and the quantized signal-to-mask ratio, a noise-to-mask ratio of each quantization level is determined. Then, a quantization level with the minimum noise-to-mask is obtained from the noise-to-mask ratios, and a part of the total byte number is assigned to the allocation byte number of the quantization level of the minimum noise-to-mask ratio. Finally, in response to the quantity change of the total byte number, the operation of distributing the byte allocation table is completed.
Patent TW-589415-B (TW)
Title: Method for producing silicon single crystal wafer and silicon single crystal wafer
Inventor: TAMATSUKA MASARO
IPC: C30B33/00
Filed: 1999-03-01
Granted: 2004-06-01
Abstract: There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot in which nitrogen is doped is grown by Czochralski method, the single crystal ingot is sliced to provide a silicon single crystal wafer, and then the silicon single crystal wafer is subjected to heat treatment to out-diffuse nitrogen on the surface of the wafer, and the silicon single crystal wafer produced by the method; a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown a silicon single crystal ingot in which nitrogen is doped by Czochralski method with controlling nitrogen concentration, oxygen concentration and cooling rate, and then the silicon single crystal ingot is sliced to provide a wafer; a silicon single crystal wafer obtained by slicing a silicon single crystal ingot grown by Czochralski method with doping nitrogen wherein depth of denuded zone after gettering heat treatment or device fabricating heat treatment is 2 to 12 mum, and bulk micro-defect density after gettering heat treatment or device fabricating heat treatment is 1x10<8> to 2x10<10> number/cm<3>. There can be provided CZ silicon wafer wherein generation of crystal defects on the surface of the wafer, and oxygen precipitation is accelerated in the bulk portion of the wafer. Controllable range of the depth of denuded zone and the bulk micro-defect density can be enlarged.
Patent TW-434786-B (TW)
Title: Method for fabricating a trench isolation
Inventor: WU JR-DA
IPC: H01L21/762
Filed: 1999-03-04
Granted: 2001-05-16
Abstract: The present invention provides a method for fabricating a trench isolation, which comprises providing a semiconductor substrate having a trench; using a chemical vapor phase deposition to fill the trench with a first oxide layer having a void therein; etching the upper portion of the first oxide layer until removing the void; using a chemical vapor deposition to form a second oxide layer above the remaining first oxide layer, the second oxide layer also having a void; etching the upper portion of the second oxide layer until removing the void of the second oxide layer so that the remaining second oxide layer and the remaining first oxide layer form a trench isolation. The present invention can solve the known void problem at a low cost.
Patent TW-412445-B (TW)
Title: Diffusion bonding metallic catalyst carrier and a production thereof
Inventor: TAKAHASHI YASUO
IPC: B01D53/94
Filed: 1999-03-16
Granted: 2000-11-21
Abstract: The present invention provides a diffusion bonding metallic catalyst carrier having an excellent oxidation resistance and durability by minimizing an amount of evaporation of aluminum and keeping a required diffusion bonding strength in a diffusion bonding of a metallic honeycomb body made of heat resistant stainless steel containing aluminum. The present inventive diffusion bonding metallic catalyst carrier comprising a wound or stacked body comprises a corrugated foil strip made of aluminum containing heat resistance stainless steel and flat foil strip made of stainless steel interchangeably. This honeycomb body, which is constructed by the diffusion bonded corrugated foil with flat foil without sintered bridges at the diffusion bonded area in the longitudinal direction , is inserted in the metallic circular body. The surface roughness of the foils after diffusion bonding heat treatment is Ra: 0.001 to 2.0 mu m measured by center line average height. A method for production of the diffusion bonding metallic catalyst carrier satisfies the condition in which the value of <lambda>b defined by the following formula is more than 8 and less than 20: <lambda>b = 6.8 x 10<-12> x <delta>f<-1> x F<1/2> x Ra <-1/2> x T <1/4> x exp(15000/T) x b<1/2> under the condition of 7.52 x 10<9> x exp(-3500/T) >= 8 x Pout wherein, <delta>f(m) represents the foil thickness, Ra(mu m) represents the average roughness of the foil surface, F(kgf) represents a back tension during coiling, b(m) represents the contact width of the corrugate foil and flat foil, T(K) represents the heat treatment temperature, and Pout(Pa) represents the vacuum degree.
Patent TW-436656-B (TW)
Title: A reflective liquid crystal display device
Inventor: YAMAGUCHI HISANORI
IPC: G02F1/1335
Filed: 1999-05-27
Granted: 2001-05-28
Abstract: In a reflective type liquid crystal display employing single polarization film, bright white and achromatic color can be displayed with high contrast by satisfying: an angle of twist of the nematic liquid crystal ranges from 45 degrees to 90 degrees; multiple of birefringence of liquid crystal and thickness of liquid crystal layer ranges from 0.20 to 0.30 mu m; retardation of the phase difference film on the side of the polarization film ranges from 0.23 to 0.28 mu m; retardation of the phase difference film on the side of the liquid crystal cell ranges from 0.13 to 0.18 mu m; coefficient z of the two phase difference films ranges from 0.3 to 1.0 respectively; and when an angle formed by the direction of absorption axis of the polarization film, an angle formed by the direction of lagged axis of the phase difference film on the side of the polarization film, an angle formed by the direction of lagged axis of the phase difference film on the side of the liquid crystal cell with respect to the reference line, are represented in terms of Φp, ΦF1, and ΦF2 respectively, assuming that the direction that the liquid crystal twists to the lower substrate is positive when we see it from upper substrate, Φp ranges from 75 degrees to 195 degrees, Φp-ΦF1 ranges from 105 degrees to 115 degrees, Φp-ΦF2 ranges from 165 degrees to 175 degrees.
Patent TW-419886-B (TW)
Title: Phase-cyclic digital upconverter
Inventor: CHEN YUNG-MAU
IPC: H03D7/10
Filed: 1999-06-22
Granted: 2001-01-21
Abstract: A phase-cyclic digital frequency multiplier which is composed of a coordinate converter, a phase accumulator, a cosine table and a multiplicator. When inputting the two analog signals S1 and S2, the coordinate converter will transmit the two signals to different paths that the in-phase signal S1 will be directly transmitted to the multiplicator; and the 90-degree phase signal S2 will be combined with a loading frequency through a phase accumulator, then reaching the multiplicator after conversion by the cosine table operation; thereafter, the S2 will be combined with S1 and the resulting signal from the combination is a stable digital frequency multiplication signal.
Patent TW-552250-B (TW)
Title: Barium titanate dispersions
Inventor: MILLER DAVID V
IPC: C04B35/468
Filed: 1999-06-23
Granted: 2003-09-11
Abstract: The invention provides slurries, dispersions, or slips of barium titanate-based particles in a non-aqueous medium and methods of their production. The particles have a costing comprising a metal oxide, metal hydrous oxide, metal hydroxide or organic acid salt of a metal other than barium or titanium. At least 90 percent of the particles have a partible size less than 0.9 micrometer when the coated particles are dispersed by high shear mixing.
Patent TW-429627-B (TW)
Title: Fabricating method of transistor
Inventor: LIN SZ-MIN
IPC: H01L29/732
Filed: 1999-08-17
Granted: 2001-04-11
Abstract: This invention is about the fabricating method of vertical metal oxide semiconductor transistor. At first, a silicon substrate having the formed isolation structure is provided. Part of silicon substrate is stripped, in which opening is formed. An oxide spacer is formed on the sidewall of opening. After that, an epitaxy layer is formed on silicon substrate of the opening bottom portion, in which the thickness of silicon epitaxy layer is smaller than the opening depth. A cap layer is formed on the epitaxy layer to fill up the opening. Oxide spacer and the part of isolation structure that is above the bottom portion of opening are removed. By using cap layer as mask, ion implantation method is performed to form source regions in the substrate that is on both sides of the silicon epitaxy layer. On the sidewall of epitaxy layer, a channel silicon epitaxy layer is formed to cover source regions. The second ion implantation process is then performed to dope channel silicon epitaxy layer and form a drain region on top of the channel silicon epitaxy layer. A gate oxide layer is formed on the channel silicon epitaxy layer and the drain region surface. Finally, a gate conduction layer is formed on the sidewall of gate oxide layer and covers the isolation structure.
Patent TW-428106-B (TW)
Title: Method for manufacturing compound lens
Inventor: CHEN YUNG-YI
IPC: C03B23/22
Filed: 1999-08-18
Granted: 2001-04-01
Abstract: A method for manufacturing a set of lenses, first, make a rough surface around a lens with an optical surface. Second, form a lens preform and place it over the optical surface of the lens. And then the lens is used as a molding core, and a high temperature process is proceeded to combine the lens preform and lens together to make a compound lens set by the rough surface around optical surface of lens. In which the transition temperature of lens is higher than that of the lens preform.
Patent TW-448628-B (TW)
Title: Quadrature output oscillator device, and method of providing ideal in-phase and quadrature phase signal components
Inventor: GHARPUREY RANJIT
IPC: H03B5/02
Filed: 1999-08-21
Granted: 2001-08-01
Abstract: A quadrature output oscillator device (22) includes a first voltage controlled oscillator (40) and a second voltage controlled oscillator (44). The second voltage controlled oscillator (44) generates a first output (C) and a second output (D) to drive a first amplifier (42). The second output (D) of the second voltage controlled oscillator (44) is a quadrature-phase signal component output (Q) of the quadrature output oscillator device (22). The first voltage controlled oscillator (40) generates a first output (A) and a second output (B) to drive a second amplifier (46). The second output (B) of the first voltage controlled oscillator (40) is an in-phase signal component output (I) of the quadrature output oscillator device (22). The first amplifier (42) generates feedback signals for the first output (A) and the second output (B) of the first voltage controlled oscillator (40). The second amplifier (46) generates feedback signals for the first output (C) and the second output (D) of the second voltage controlled oscillator (44). A gain adjust unit (48) controls the gain for the first amplifier (42) and the second amplifier (46) such that the quadrature output oscillator device (22) produces ideal in-phase (I) and quadrature-phase (Q) signal component outputs.
Patent TW-414997-B (TW)
Title: Quality control method of semiconductor manufacturing process
Inventor: SHIU TZ-JENG
IPC: H01L21/66
Filed: 1999-09-07
Granted: 2000-12-11
Abstract: A system of product quality controlling is provided according to statistical sampling product detecting value. The system comprises a manufacturing executive system (MES) for controlling a product manufacturing process and transferring a product detecting result to a SPC analyzer. A statistics method is performed for analyzing and sampling. The analyzed sampling rate is stored into a sampling rate database. The background server, which is a kernel of the whole operation, reads the sampling data in the sampling rate database. A product detecting rate of the manufacturing executive system is controlled randomly according to the sampling data. An operator can enter the sampling rate into the sampling rate database by using a patterned user interface for changing the sampling rate, so as to achieve the object of dynamic change of detection. The sampling rate can be controlled dynamically according to the reliability of the product to reduce the detecting cost and to detect product quality strictly.
Patent TW-429654-B (TW)
Title: Cable connector assembly
Inventor: HWANG JENG-YIH
IPC: H01R13/645
Filed: 1999-10-26
Granted: 2001-04-11
Abstract: A blind-mate, snap-in cable connector assembly comprises a first connector mounted on a first supporting plate. The first connector includes a first housing defining a pair of cavities therethrough. A second connector is mated to the first connector. The second connector includes a second housing forming a pair sleeves each received into the corresponding cavity when the connectors are assembled. Blind mating means formed between the first and second connectors includes a guiding rod formed on one of the first and second connectors and a receiving passage formed on another of the first and second connectors.
Patent TW-555659-B (TW)
Title: Gas generator for air bag and coolant thereof
Inventor: WATASE TAKEFUMI
IPC: B60R21/26
Filed: 1999-11-02
Granted: 2003-10-01
Abstract: A porous part for gas generator for air bag is provided. The porous part has sufficient strength, and can be manufactured at low price and easily. And the airbag can be manufactured by use of the porous part at low price. The gas generator for air bag characterizes in that within a cylindrical housing with plural gas discharge ports, there receive a igniting means actuated by impacting action and a gas generating means for generating combustion gas ignited by the igniting means and occurred combustion. Also, porous plate part of dilatable metal is rolled into a ring contour and a plurality of the plate part in ring shape are used to form a cylindrical body to install within the housing around the same axis.