Patent SG-11201804271Q-A (SG)
Title: Manufacturing method of smoothing a semiconductor surface
Inventor: WANG GANG
IPC: H01L21/762
Filed: 2016-11-15
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property - Organization International Bureau ..... ......,„01 (43) International Publication Date r 26 May 2017(26.05.2017) WIPO I PCT ID Hit (10) WO International 2017/087393 111111111111111111111111111111111111111111111111111111111111t111111111111111 Publication Al Number (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every HO1L 21/762 (2006.01) H01L 21/02 (2006.01) kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (21) International Application Number: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, PCT/US2016/062050 DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (22) International Filing Date: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, 15 November 2016 (15.11.2016) KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, (25) Filing Language: English OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (26) Publication Language: English SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, (30) Priority Data: ZW. 62/257,764 20 November 2015 (20.11.2015) US (84) Designated States (unless otherwise indicated, for every (71) Applicant: SUNEDISON SEMICONDUCTOR LIM- kind of regional protection available): ARIPO (BW, GH, ITED [SG/SG]; 9 Battery Road, #15-01, Straits Trading GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Building, Singapore 049910 (SG). TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (72) Inventor; and TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (71) Applicant o r US only): LOTTES, Charles, R. [US/US]; LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, 501 Pearl Drive, St. Peters, MO 63376 (US). SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, (72) Inventors: WANG, Gang; 501 Pearl Drive, St. Peters, GW, KM, ML, MR, NE, SN, TD, TG). MO 63376 (US). KVVESKIN, Sasha; 501 Pearl Drive, St. Published: Peters, MO 63376 (US). 21(3)) with international search report (Art (74) Agents: SCHUTH, Richard, A. et al.; Armstrong Teas- dale LLP, 7700 Forsyth Blvd., Suite 1800, St. Louis, MO 63105 (US). (54) Title: MANUFACTURING METHOD OF SMOOTHING A SEMICONDUCTOR SURFACE 2.4 H I ,-;Te 2.2 --; ct 21 2 ; Lk ct 1.81 E ' , = 1.6 c (t) , 1 1 X 1A-1 § 1 , 12 CD - .4t M CT\ M it-- cc O it-- 1-1 (57) : A method is provided device layer having a smooth surface. 71 High SL The for preparing ! 1 , - 1 - Medium SL STRESS semiconductor method provided involves FIG. Low SL structure, LAYER smoothing a semiconductor T 2 e.g., a semiconductor i No SL Control on substrate -1 insulator structure, comprising surface by making use N a of stress enhanced surface diffusion at elevated temperatures. The purpose of this method is to reach atomic scale surface smooth - 0 ness (for example, smoothness in the range of between 1.0 and 1.5 angstroms as measured according to root mean square over a 30um X 30um AFM measurement), which is required in advanced (sub 28 nm) CMOS device fabrication.