Patent SG-11201907118W-A (SG)
Title: Write data path to reduce charge leakage of negative boost
Inventor: AHMED FAHAD
IPC: G11C5/14
Filed: 2018-03-12
Abstract: 245 data B B1 82 B2 125 135 130 FIG. 2A wm1 wm0 202 215 VDD VDD 220 205 boost_enb data_bar 200 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 27 September 2018 (27.09.2018) W I PO I ill 1111u°11101VIIIVIIIVIIIolo VIII VIIIVIIIl VIIIintis (10) International Publication Number WO 2018/175136 Al PCT (51) International Patent Classification: Gl1C 5/14 (2006.01) Gl1C 7/12 (2006.01) (21) International Application Number: PCT/US2018/022060 (22) International Filing Date: 12 March 2018 (12.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/466,749 22 March 2017 (22.03.2017) US (71) Applicant: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration, 5775 Morehouse Drive, San Diego, California 92121-1714 (US). (72) Inventors: AHMED, Fahad; 5775 Morehouse Drive, San Diego, California 92121 (US). NARASIMHAN, Mukund; 5775 Morehouse Drive, San Diego, California 92121 (US). GUPTA, Raghav; 5775 Morehouse Drive, San Diego, Cal- ifornia 92121 (US). RAJ, Pradeep; 5775 Morehouse Dri- ye, San Diego, California 92121 (US). SAHU, Rahul; 5775 Morehouse Drive, San Diego, California 92121 (US). CHEN, Po-Hung; 5775 Morehouse Drive, San Diego, Cali- fornia 92121 (US). JUNG, Chulmin; 5775 Morehouse Dri- ve, San Diego, California 92121 (US). (74) Agent: HALLMAN, Jonathan W.; Suite 700, 2323 Vic- tory Avenue, Dallas, Texas 75219 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (54) Title: WRITE DATA PATH TO REDUCE CHARGE LEAKAGE OF NEGATIVE BOOST (57) : A write driver is provided that includes a first write driver inverter that inverts a data signal to drive a gate of a second write driver transistor. The write driver transistor has a terminal coupled to a bit line and another terminal coupled to a boost capacitor. A ground for the first write driver inverter floats during a write assist period to choke off leakage of boost charge from the boost capacitor through the write driver transistor. [Continued on next page] WO 2018/175136 Al MIDEDIM01101 DIVIIMERIOMMMEM11111111111101111111111111111111 GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(ii)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))