baber/WOPTO huggingface dataset:
Patent JP-S58110179-A (JP)
Title: Monitoring method for shielding state in consumable electrode type gas shielded arc welding
Inventor: IDE EIZOU
IPC: B23K9/095
Filed: 1981-12-24
Abstract: PURPOSE:To make the monitoring of impurities in a shielding gas possible by storing the welding current of the time when no impurities are contained in the shielding gas as functions of welding voltage and the feed speed of a wire and comparing the same with the values in the stage of actual welding. CONSTITUTION:The welding current, the voltage between a chip 4 and objects 5 to be welded, and the feed speed of a wire 3 in the state in which no impurities are contained in a shielding gas are measured. The welding current in the stage of non-consumable electrode type gas shielded arc welding in the above- described state is stored in an arithmetic unit 19 as functions of the above- described voltage and feed speed. The welding current, the voltage between the chip 4 and the objects 5, and the feed speed of the wire 3 in the stage of actual welding are respectively detected. The detected values are inputted to the unit 19, which operates the relations with the functions stored therein. Thus the impurities in the shielding gas are monitored in accordance with the difference in the functions.
Patent JP-H0380100-A (JP)
Title: Detection of base sequence mutation in nucleic acid and reagent therefor
Inventor: HIKICHI KAZUMASA
IPC: G01N33/50
Filed: 1989-08-22
Abstract: PURPOSE:To accomplish simple detection of the title base sequence mutation in such a way that a mixture of normal-type base sequence probe and abnormal- type base sequence probe with one of them labelled is hybridized with sample nucleic acid, and unbound probe is removed and then the label is detected. CONSTITUTION:Using the title reagent comprising a mixture of (A) normal-type probe having base sequence complementary to normal-type base sequence and (B) abnormal-type probe having base sequence complementary to abnormal-type base sequence with one of them labelled, this mixed probe is hybridized, on a carrier, with a sample nucleic acid amplified with e.g. the gene amplification method (e.g. adenine phosphoribosyl transferase DNA), and unbound probe is then washed and removed and then the label is detected on the carrier, thus accomplishing the objective detection of the base sequence mutation of nucleic acid due to e.g. mutation.
Patent JP-H0948663-A (JP)
Title: Ceramic dielectric material
Inventor: TANAKA HIROAKI
IPC: H01B3/12
Filed: 1995-08-02
Abstract: PROBLEM TO BE SOLVED: To obtain a ceramic dielectric material capable of widening the range of selecting a dielectric constant by extending the region of composition capable of sintering. SOLUTION: This ceramic dielectric material is expressed by the formula Mgx Cay ALz Ti2x-z-y O3 (0.6<x<1.9, 0<y<=0.1, 0.1<=z<=0.2). The powder of each of the raw materials is weighed so as to make the composition satisfying the formula, mixed, and burned preliminary, and then the obtained preliminary burned material is crushed again. Then, the crushed powder is granulated by using a binder and formed to a prescribed shape, then the binder is removed, and next the formed material is burned for constituting the ceramic dielectric material.
Patent JP-S6195855-A (JP)
Title: Positioning and measuring device of cutting tool
Inventor: SHIOZAWA YOSHITO
IPC: B23Q17/22
Filed: 1984-10-15
Abstract: PURPOSE:To perform measurement of plural places efficiently and position rapidly and correctly by providing plural horizontal moving shafts and mounting length measuring machines and pressing screws on respective shafts. CONSTITUTION:A cutting tool is placed on a main shaft table 11, and length measuring machines 23 or pressing screws 24 are mounted on the tips of horizontal moving shafts 18a,...,18e through adapters, and these tips are contacted to a cutting tool to measure position or the cutting tool is pressed by the pressing screws to adjust the pressing position. For example, the cutting tool 27 is placed on the main shaft table 11 and pressing screws 24 are mounted on the horizontal moving shafts 18b, 18d and length measuring machines 23 on the horizontal moving shafts 18c, 18e in the horizontal direction, then the diameter of the cutting edge is measured by the measuring machine 23 and the main shaft table 11 is rotated to press the cutting edge by the pressing screw 24, and positioning can be made. measurement of plural places can efficiently be made and position can rapidly and correctly be made.
Patent JP-H0555937-A (JP)
Title: Carrier changeover device
Inventor: SATO TORU
IPC: H04B1/74
Filed: 1991-08-28
Abstract: PURPOSE:To prevent a waveform of a carrier from being discontinuous at the changeover. CONSTITUTION:A high frequency high speed switch 3 selects either of carriers S1, S2 outputted from carrier oscillators 11, 12 and the selected carrier is sent to a phase synchronization circuit 5. Moreover, the other carrier is sent to a termination resistor 4. The phase synchronization circuit 5 consists of a phase comparator section 51, a low pass filter 52 and a voltage controlled oscillator section (VCO) 53 to form a phase locked loop (PLL), which generates a signal phase locked to the inputted carrier and it is sent to an output terminal 6.
Patent JP-2000050625-A (JP)
Title: Switching power supply circuit
Inventor: TSUTSUMI TAKESHI
IPC: H02M3/28
Filed: 1998-07-30
Abstract: PROBLEM TO BE SOLVED: To reduce losses in a switching power supply circuit. SOLUTION: A drive circuit driving a reflux switch or a third MOSFET 5 consists of a fourth MOSFET 10, a first diode 8, a second diode 9, a first capacitor 11 and a resistor 12. When a main power conversion switch or a first MOSFET 2 is turned on, the fourth MOSFET 10 is turned on, and a gate charge of the third MOSFET 5 is pulled out by the fourth MOSFET 10. The electric potential decreases rapidly, and the third MOSFET 5 is turned off. Therefore, current by the body diode of the third MOSFET 5 will not flow, because the current flows in the order of a chalk coil 6, a smoothing capacitor 7, the second MOSFET 4, and a transformer 3. When the third MOSFET 5 is off, a stable gate bias voltage is ensured by the gate input capacity of the first diode 8 and the third MOSFET 5, so that reflux current flows through the fourth MOSFET 10.
Patent JP-S6194985-A (JP)
Inventor: SHIMOAKI MOTOO
IPC: B66B9/04
Filed: 1984-10-15
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0766502-A (JP)
Title: Optical semiconductor device and forming method thereof
Inventor: TABUCHI HARUHIKO
IPC: H01L27/15
Filed: 1993-08-31
Abstract: PURPOSE:To monolithically form opticallyactive elements and photo-waveguides while enlarging the diameter of optical beams in the width direction and thickness direction of a core layer on the end faces of the opticalwaveguide in relation to an optical semiconductor device. CONSTITUTION:The opticalsemiconductor device containing opticallyactive elements 35 comprising pn junction or pin junction is monolithically formed of at least either one out of the optical input part or output part of the opticallyactive elements 35 furthermore containing a core layer with film thickness thereof getting thinner as distant from the opticallyactive elements 35 as well as waveguides 36 comprising clad layers 15, 22 encircling the core layer.
Patent JP-S6278000-A (JP)
Title: Flexible sheet material for craft in which distortion is notgenerated and method of printing design, etc. of said sheet material
Inventor: KATZ MARCELLA M
IPC: D05C1/08
Filed: 1986-09-16
Abstract: Flexible non-distortable handcraft sheet materials (78), including needlework fabrics, adaptable for receiving printed designs, patterns, photographs and craft instruc­tional information and the methodology for producing the materials with the deisgns, patterns and photographs and instructional information printed thereon. Material alignment and feed features are located along the parallel edges of the materials for moving same through a computer-­directed printer (76). In accordance with the methodology visual information in the form of designs, patterns, photographs, flat art work, still objects, live objects, etc. is converted into digital information through a digitizer (68) with the digitized image information thereafter fed to a computer (72) for manipulation and editing by software and keyboard (80) direction and for conversion to visual image information for CRT display (74) and for utilization by a computer printer as imprinted geographic information. The flexible handcraft sheet materials (78) bearing printer feed features include: paper and paper laminates; leather, suede, simulated leather, paper-leather and plastic-­leather laminates; paper-thin woods, wood veneers and wood alminates with paper or plastic; laminates including non-woven, spun-bonded random fiber plastic sheet; plastic and paper-plastic laminates; foil and foil laminates; and like craft materials.
Patent JP-S60110285-A (JP)
Title: Culture of yeast having carotenoid biosynthesis capability
Inventor: SUZUKI YOSHIHISA
IPC: C12P23/00
Filed: 1983-11-18
Abstract: PURPOSE:To product carotenoid useful as an additive for food and feed, in high yield, by culturing a yeast strain capable of producing carotenoid by biosynthesis in a nutrient medium under the radiation of light containing ultraviolet ray having a specific wavelength, and collecting a yeast strain having increased carotenoid productivity from the cultured product. CONSTITUTION:A carotenoid-producing yeast strain (e.g. Rhodosporidium toruloides IFO 0559, etc.) is cultured in a nutrient medium under the radiation of light containing at least the ultraviolet ray having the wavelength of 280- 400nm. A yeast strain having increased carotenoid-productivity is collected from the cultured product, and cultured to obtain carotenoid in high yield. Preferably, the irradiation with the ultraviolet ray is initiated at an arbitrary stage of the logarithmic growth stage, and the intensity is 1-100,000muW/cm<2> at the surface of the medium.
Patent JP-S6460710-A (JP)
Title: Muffler
Inventor: SUZUKI MASATAKE
IPC: F01N1/08
Filed: 1987-08-28
Abstract: PURPOSE:To prevent lowering of engine output by disposing an air suction pipe in a muffler body to cool exhaust gas in the muffler, so that the exhaust gas pressure is decreased. CONSTITUTION:An air suction pipe 40 is disposed in a muffler 20, and one end 40a of the pipe 40 is opened to the outside toward the forwarding direction of a vehicle to suck air during running. Exhaust gas is cooled by the outside air flowing through the pipe 40 to decrease the exhaust gas pressure, so that lowering of engine output can be prevented.
Patent JP-H10134574-A (JP)
Title: Semiconductor memory device
Inventor: HYON SHOKU O
IPC: G11C7/06
Filed: 1997-08-11
Abstract: PROBLEM TO BE SOLVED: To compensate the voltage fluctuation of a battery and avoid the malfunctioning caused by the voltage fluctuation by a method wherein a power supply voltage regulation unit is constituted for the power supply terminal of a sensing amplifier which senses and outputs a cell datum. SOLUTION: A sensing amplifier is constituted of transistors M9-M12 and amplifies the cell datum potential of a node K2 and outputs the amplified potential from its output terminal C. A current mirror is composed of 2nd and 3rd P-MOS transistors 55 and 56 and source currents applied to the sources of both the transistors are maintaned to be equal to each other. A level shifter is composed of 4th and 5th N-MOS transistors 57 and 58 and a 1st resistor 61. The value of a current applied to the 1st resistor 61 is fed back to a node M to keep the potential of the node M constant. The potential of the node M is supplied to a differential amplifier 59 as a reference voltage and the differential amplifier 59 keeps the voltage of the power supply terminal A of the sensing amplifier constant through the 4th P-MOS transistor 60.
Patent JP-S6372211-A (JP)
Title: Lamination type piezoelectric resonator
Inventor: YAMAMOTO TAKASHI
IPC: H03H9/205
Filed: 1986-09-12
Abstract: PURPOSE:To contrive to attain miniaturization by adhering two resonator elements having electrodes on both sides of a piezoelectric substrate by a conductive adhesives while arranging the polarization direction and selecting the aspect ratio W/L of the element as 0.12<W/L<0.22. CONSTITUTION:The resonator elements 2, 3 having electrodes 5 on both sides of the piezoelectric substrate 4 are laminated while the polarization direction is made identical. Then the opposed electrodes 5 are adhered by a conductive adhesives 6 such as a conductive paste or paste solder. The aspect ratio W/L of the piezoelectric substrate 4 of the resonator elements 2, 3 in this case is selected in a range of 0.12<W/L<0.22. Thus, the resonator acts like a longitudinal vibration mode resonator giving an electric characteristic similar to that of the vibrator using a square piezoelectric substrate and the occupied space is reduced remarkably.
Patent JP-H0498885-A (JP)
Title: Slab type solid-state laser device
Inventor: SHINDO YOSHIHIKO
IPC: H01S3/02
Filed: 1990-08-17
Abstract: PURPOSE:To obtain a laser device which can be reliably operated for a long term by a method wherein a holding piece is formed of a metal block and provided with a hole into which a slab-type laser medium is inserted, and the laser medium is held inside the hole concerned through the intermediary of a pair of insulators provided to the side faces of the laser medium. CONSTITUTION:A hole is provided to a holding piece 33, grooves 33a are provided to a hole confronting each other, where the grooves 33a guide heat insulators 32 provided to the side faces of a laser medium 31 in one piece closely in the direction of the slant end faces of the laser medium, and the hole concerned is similar to the laser medium provided with the insulators in cross section, where the inner circumferential surface of the hole is prevented from coming into contact with the laser medium except the grooves 33a provided to the hole, and a gap 37 is formed when the laser medium 31 is inserted into the holding piece 33. A thin-wall part 34 serving as a plate spring and a slit 35 which is located on an opposite side of the part 24 and splits the outside of the hole into two are provided to the holding piece 33, and a bolt 36a is tightened so as to enable the opposed faces to approximate to each other, whereby the thin-wall part 34 is distorted by a gap which is inevitably induced in processing to enable the laser medium 31 to be held by the holding piece 33 through the intermediary of the heat insulators located at the ends of the laser medium 31.
Patent JP-H1047841-A (JP)
Title: Handle of refrigerator door
Inventor: HAYASHI MASAHIDE
IPC: F25D23/02
Filed: 1996-07-30
Abstract: PROBLEM TO BE SOLVED: To prevent the cross contamination, and to prevent disagreeable odor through a knob by mixing the inorganic antibacterial agent in the surface of the metallic knob, and performing the baking finish of the inorganic paint to be hardened at a prescribed temperature to provide an antibacterial grip part. SOLUTION: A knob for a refrigerator is made of an appropriately selected metal such as aluminum alloy, stainless steel, and brass. The inorganic paint in which the inorganic antibacterial agent is mixed is baked on the surface of a grip part of the metallic knob. The inorganic material such as silver ion adsorbed in zeolite, titanium oxide and zinc powder is preferable for the antibacterial agent so as to provide both functions of antibacterial activity and deodorization. The inorganic paint which is not deteriorated by the inorganic antibacterial agent, and which is of a setting type at a relatively low temperature of normal temperature to about 200 deg.C at which no grip part is melted during the baking, e.g. a mixture of silicon resin with alumina is preferable as the paint.
Patent JP-H1168665-A (JP)
Title: Spatial optical transmission equipment
Inventor: SHIRATAMA KOUICHI
IPC: H04B10/118
Filed: 1997-08-11
Abstract: PROBLEM TO BE SOLVED: To reduce equipment components and to attain miniaturization, lightening, cost down and power consumption reduction by using one sensor for acquisition-tracking of a acquisition-tracking control system for both sensors for rough acquisition and fine acquisition-tracking. SOLUTION: A beam splitter 11 inserted in the middle of a coaxial beam multiplexes/demultiplexes transmitted and received beams. Further, the received beam is split by a beam splitter 12 and inputted to an optical receiver 4 for communication and a sensor 3 for capture trace. The sensor 3 for acquisition- tracking detects the angle direction of a light beam from an opposed optical terminal, especially detects it with high accuracy at high speed near the center of the sensor. Then, such a detected angle signal is fed back to rough and fine acquisition-tracking driving control circuits 7 and 8 and rough and fine acquisition-tracking mechanisms 6 and 2 are driven.  Since the transmitted and received beams are coaxial, the received beam from the opposed optical terminal is highly accurately controlled in tracing so that the transmitted light beam can be highly accurately oriented to the opposed optical terminal at the same time.
Patent JP-H0381090-A (JP)
Title: Roll for continuous casting and manufacture thereof
Inventor: IKEDA YOSHITO
IPC: B22D11/128
Filed: 1989-08-22
Abstract: PURPOSE:To improve service life of a roll for continuous casting by forming deposited metal with a limited component composition on the roll base body to constitute a roll raw body and heat treating this roll raw body with a limited temp. and treating time. CONSTITUTION:The deposited metal layer composed of 0.05-0.15wt.% C, 5-15% Ni, 25-35% Cr and the balance of Fe, is formed on the roll base body to constitute the roll raw body. Successively, by heat treating this roll raw body at 400-700 deg.C for 2-6 hr, the roll for continuous casting is manufactured. Then, in using this as support roll or foot roll for requiring heat resistance and steam oxidizing resistance, the service life can be improved to about 3-4 times.
Patent JP-S6195572-A (JP)
Title: Manufacture of semiconductor device
Inventor: TOSAKA ASAMITSU
IPC: H01L21/302
Filed: 1984-10-16
Abstract: PURPOSE:To obtain a high performance semiconductor device with good reproducibility by forming an electrode consisting of a first metal to the surface of semiconductor crystal layer, vacuum depositing a second metal from the vertical direction, and thereafter depositing an insulating film to the entire part including the side surface of gate electrode and leaving the insulating film only at the side surface of gate electrode through etching of such insulating film. CONSTITUTION:The Si<+> ion is implanted to a semi-insulated GaAs substrate 10 and a GaAs semiconductor crystal layer 11 is obtained by annealing it. A gate electrode 12 consisting of tungsten is formed. Next, aluminum 13 is vacuum deposited from the vertical direction. Next, SiO2 film 15 is deposited. A side wall 16 is formed by etching SiO2 film 15 from the vertical direction. The exposed Al is removed with the phosphoric acid solution which etches Al but tungsten W. Next, an ohmic metal, AuGe 19 is vacuum deposited from the upper side for alloy processing, thus completing a GaAs MESFET.
Patent JP-H0497723-A (JP)
Title: Suction port of vacuum cleaner
Inventor: KATO KIMINORI
IPC: A47L11/20
Filed: 1990-08-16
Abstract: PURPOSE:To clean the gap between plates cheaply without an additional motor by providing a transmitting means to transmit the torque of wheels to floor brushing buff. CONSTITUTION:Preparing a wheel 12 which is set in the floor cleaning suction port body 6 and can rotate freely and a floor brushing buff 13 of urethan foam, etc., the torque of wheel 12 can be transmitted through a belt 18. The buff 13 is set normally obliquely above the wheel 12 at an angle and pushed down only to clean the floor surface. As the result, the gap between plates can be cleaned cheaply without any additional motor and this makes it possible to collect dust on the floor and brush the floor surface.
Patent JP-H0668254-A (JP)
Title: Histogram arithmetic unit
Inventor: TAKANO HIROSHI
IPC: G06T1/20
Filed: 1992-08-14
Abstract: PURPOSE:To shorter a processing step by determining a histogram accumulated value till the next time series data is inputted every time when one of time series data is inputted and calculating the accumulated values of plural maximum accumulated values with each other in each block. CONSTITUTION:In an address arithmetic circuit 6, time series data is outputted as address data ADij and the contents of a word memory is increased by one. Next, address data ADij+1 is outputted, the contents of the word memory is increased and a histogram accumulated value is determined. At the point of time when the input of time series data is terminated by repeating a sequence every time when time series data is inputted, the histogram accumulated value for each block is determined. When the input is terminated, the address of the word memory is outputted in the address arithmetic circuit 6, a second multiplexer 3 is switched so as to transmit the output of a register 5 to an adder 2 and the maximum accumulated value of the highest order word memory of each block is calculated.
Patent JP-S60109287-A (JP)
Title: Manufacture of mos semiconductor device
Inventor: HENMI MANABU
IPC: H01L29/78
Filed: 1983-11-17
Abstract: PURPOSE:To finely form the second conductive layer containing oxygen having a required pattern with good accuracy by the patterning treatment to the first conductive layer of a high melting point metal containing oxygen with electron beams or radiations. CONSTITUTION:An insulation film 12 made of silicon oxide is formed on a semiconductor substrate 11 by the treatment of thermal oxidation, and the conductive layer 13 made of molybdenum or tungsten as a high melting point metal containing oxygen is formed by the method of magnetron sputtering. Next, the conductive layer 14 containing oxygen having a required pattern is formed out of the conductive layer 13 by the patterning treatment using electron beams or radiations. The thickness of an insulation film 12 in the region under the conductive layer 14 is increased by diffusing the oxygen contained by this layer into the insulation film by heat treatment; accordingly, an interface 16 is formed between the substrate, coming more downward to the opposite side of the layer 14 than before the heat treatment, and the region of the insulation film under the layer 14.
Patent JP-S6276776-A (JP)
Title: Semiconductor device
Inventor: ITABASHI YASUSHI
IPC: H01L29/78
Filed: 1985-09-30
Abstract: PURPOSE:To increase a chip size and reliability and to obtain a high drain withstand without decreasing a driving force by disposing the end of the high density region of source and drain regions corresponding to the position of the end of a gate electrode, disposing a low density regin layer between source and drain under the gate electrode in a predetermined thickness. CONSTITUTION:A gate insulating film 2 and a gate electrode 3 are formed on the main surface of a p-type semiconductor substrate 1, with the electrode 3 as a mask doner impurity is ion implanted in small amount, and annealed to form low density source and drain regions 15b, 16b. An insulating film 17 is accumulated on the entire surface, an insulating film 17a is formed on the side of the electrode 3 by etching, with the film 17 and the electrode 3 as mask doner impurity is ion implanted, and annealed to form high density source region layer 15a and drain region 16a, and low density source and drain region layers 15b, 16b are aligned in the boundary in a predetermined thickness. An insulating film 6 is formed on the entire surface, a contacting hole is opened, and metal wiring layer is formed to obtain an MOS transistor.
Patent JP-S6276268-A (JP)
Inventor: ITO KAZUMI
IPC: H01R11/01
Filed: 1985-09-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。