baber/WOPTO huggingface dataset:
Patent TW-512135-B (TW)
Title: Method of manufacturing porous glass base material for use in optical fiber
Inventor: SUGIYAMA TAKASHI
IPC: C03B37/014
Filed: 1999-01-21
Granted: 2002-12-01
Abstract: The present invention is to provide a method of manufacturing base material for use in optical fiber in which the fine glass particles laminate is manufactured using a burner, which can reduce the remaining bubbles in the glass base material heated to become transparent occurred from intrusion of fine glass particles into the porous glass base material not deposited evenly. The present invention also relates to a method of manufacturing porous base material for optical fiber in which the fine glass particles are accumulated around the periphery of the rotating starting material or the mandrill said fine glass particles are generated by spouting the mixed gas containing gaseous glass material and combustion gas from the burner for composing fine glass particles for flame hydrolysis reaction and/or oxidation reaction, characterized in that the lamination of said fine glass particles is started after flowing the inactive gas inside the burner for composing said fine glass particles at an air speed of over 25 m/s. Particularly and preferably, the inactive gas compressed with a pressure higher than the atmospheric pressure is flowed into said burner at a stretch with a pressure apparatus connected with a piping with the burner for composing said fine glass particles.
Patent TW-397740-B (TW)
Title: A socket with a magnet
Inventor: YAMASHITA SHOICHRO
IPC: B25B13/06
Filed: 1999-01-29
Granted: 2000-07-11
Abstract: The invention provides a socket with a magnet, which is easy to set a magnet into a holder and makes the magnet not fall out from the holder. A type of the socket with a magnet which the magnet is fixed into the socket body, comprises: first, inserting a magnet 23 into a metal-made holder 22; second, inserting said holder 22 that contains a magnet 23 into a guide hole 29 the socket body 21; and hitching another end of said holder 22 with a groove 31 formed on a wall surface of the guide-holder 29.
Patent TW-405216-B (TW)
Title: Manufacturing the metal contact lines on a semiconductor wafer
Inventor: CHEN WEN-JI
IPC: H01L21/768
Filed: 1999-03-26
Granted: 2000-09-11
Abstract: The present invention provides a method for manufacturing the metal contact lines on a wafer. Said wafer comprises layers as follows: a bottom contact layer, and a dielectric layer on said contact layer. Said dielectric layer comprises a via perforating to the surface of the bottom contact layer; said via contains a plug having its top edge registered to the dielectric layer surface. This manufacturing method firstly dry etching the top edge of said plug until it becomes to a predetermined thickness, making said dielectric layer surface and plug position to form a concave pit. Then form a metal glue layer on the surface of said dielectric layer and the said concave pit, and cover this glue layer with a top contact layer and fill up the aid concave pit. Use photo-resist layer to define the metal contact lines and proceed the dry etching process to strip the top contact layer and glue layer which are not positioned under the resist layer but above the dielectric layer surface. Finally, strip the photo-resist layer to accomplish the fabrication of metal contact lines.
Patent TW-423047-B (TW)
Title: Method for manufacturing a semiconductor device
Inventor: ICHIKAWA TOSHIHIKO
IPC: H01L21/027
Filed: 1999-04-30
Granted: 2001-02-21
Abstract: A method of manufacturing a semiconductor device comprises forming a composite film which is etched on a base substrate. The composite film includes nitrogen atoms but, at the surface portion thereof, does not substantially include nitrogen atoms. The method further comprises forming a chemically amplified photo resist film on the composite film, exposing the photo resist film according to predetermined patterns, developing the photo resist film to form a patterned resist film, and etching the composite film by using the patterned resist film as a mask. According to this method, deterioration of throughput can be avoided, and the phenomenon of deactivation of proton acid generated on the resist exposure can be suppressed even after long time storage or even when the reconstruction is required.
Patent TW-476845-B (TW)
Title: Drier, drier assembly and drying method
Inventor: SUZUKI AKIRA
IPC: F26B3/28
Filed: 1999-05-25
Granted: 2002-02-21
Abstract: The dryer of this invention comprises: a far infrared radiator with a far infrared radiation layer (3) provided on a metal surface (2) that emits far infrared radiation (1), (15) optimal for drying a to-be-dried object; a drying chamber (12) in which far infrared radiation emitted by the far infrared radiator is directed to the to-be-dried object to dry the to-be-dried object; an elevating device (20) for varying a distance between the to-be-dried object and the far infrared radiators; a hot air closed circulation path (17) for circulating the hot air that is heated up by heat generated from the far infrared radiators; and a plenum chamber (18) for preparing a downflow of hot air toward the drying chamber, for controlling a temperature in the drying chamber, an irradiation time of far infrared radiation, a surface temperature of the far infrared radiator and a distance between the far infrared radiator and the to-be-dried object.
Patent TW-439071-B (TW)
Title: Dielectric electromagnetic composition and ceramic electronic part
Inventor: SASAKI NOBUHIRO
IPC: H01G4/12
Filed: 1999-07-14
Granted: 2001-06-07
Abstract: To obtain a dielectric porcelain composition which can be sintered at such a low temperature that the composition is integrally sintered together with Ag, Cu or the like and which sufficiently exhibits the original dielectric characteristic of a main phase which mainly contributes to the manifestation of the dielectric characteristic of the composition and to provide a ceramic electronic part using the same as a dielectric layer. The dielectric porcelain composition or dielectric porcelain composition constituting a ceramic electronic part is composed of a sintered body of ceramic particles which contain BaTi5O11 as a main component. The ceramic particles may solubilize Ag in an amount of about 0.2-3.0 mol.% as solid solution. Further, the ceramic particles may contain Ba2TiSi2O8. The preferable ratio of BaTi5O11 to Ba2TiSi2O8 is in the range of 1.5 to 9.
Patent TW-451330-B (TW)
Title: Process for producing halftone mask
Inventor: WATANABE KUNIO
IPC: G03F1/68
Filed: 1999-08-10
Granted: 2001-08-21
Abstract: A process for producing a halftone mask comprises the steps of: (a) forming an electron beam resist film on a mask blank which includes a translucent film and a light-block film sequentially formed on a transparent substrate; (b) irradiating an electron beam to the electron beam resist film in such a dose that the electron beam resist film remains in a predetermined thickness by development in a first write area and is completely removed by development in a second write area; (c) developing the electron beam resist film thereby to form an electron beam resist film retaining the predetermined thickness in the first write area and having an opening in the second write area; (d) patterning the light-block film using the resulting electron beam resist film as a mask; (e) ashing the electron beam resist film to remove the electron beam resist film from the first write area completely; (f) patterning the translucent film using the patterned light-block film as a mask; and (g) patterning the light-block film using the resulting electron beam resist film as a mask.
Patent TW-476798-B (TW)
Title: Light-transmitting film and sputtering target for forming the light-transmitting film
Inventor: KUWANO KATSUO
IPC: C23C14/08
Filed: 1999-08-11
Granted: 2002-02-21
Abstract: A light-transmitting film which comprises 0.01 to 20 weight percent of at least one glass-forming oxide selected from the group consisting of Nb2O5, V2O5, B2O3, SiO2 and P2O5, 0.01 to 20 weight percent of at least one member selected from the group consisting Al2O3 and Ga2O3, and optionally 0.01 to 5 weight percent of at least one hard material oxide selected from the group consisting ZrO2 and TiO2, the remainder of the film being constituted of at least one oxide selected from the group consisting of In2O3, SnO2 and ZnO, and a sputtering target for use in forming the film. The film and the sputtering target according to the invention can be used for reducing the particles being formed during sputtering and reducing the number of the stop of sputtering operation, which results in increasing productivity, and also for producing a protecting film for an optical disk which has a high transmittance and a low reflectance.
Patent TW-439128-B (TW)
Title: Ferro-electric transistor, a memory-cells arrangement with such ferro-electric transistors and method for its production
Inventor: HANEDER THOMAS PETER
IPC: H01L29/792
Filed: 1999-08-20
Granted: 2001-06-07
Abstract: A ferro-electric transistor suitable for a memory-cell has a 1st gate-between-layer (13) and a 1st gate-electrode (14) between source-drain-regions (12) on the surface of a semiconductor-substrate (11), wherein the 1st gate-between-layer (13) contains at least one ferro-electric layer (132). Near the 1st gate-between-layer (13) is arranged a 2nd gate-between-layer (16) and a 2nd gate-electrode (17) between the source-/drain-regions (12), wherein the 2nd gate-between-layer (16) contains a dielectric layer. The 1st gate-electrode (14) and the 2nd gate-electrode (17) are connected mutually through a diode-structure.
Patent TW-448380-B (TW)
Title: Japanese input-system, its registration-word control method and a memory which stores the registration-word control-program
Inventor: MISAO YUUKO
IPC: G06F17/22
Filed: 1999-10-12
Granted: 2001-08-01
Abstract: A Japanese input-system is provided, the words that have been specially converted are automatically registered in a pseudonym-Chinese conversion dictionary, the unnecessary words can be automatically removed form the automatically registered words, the unnecessary expansion of the data size of the memory for the pseudonym-Chinese conversion dictionary can be prevented. In this invention it includes: a conversion-engine 111, which can convert the inputted pseudonym-word into a Chinese by means of said pseudonym-Chinese conversion dictionary; a special conversion-portion 112, which can perform a special conversion according to the instruction from said conversion-engine 111, if a conversion is performed by means of a pseudonym-Chinese conversion dictionary according to said conversion-engine 111 and the desired conversion can't be accomplished; an automation-registration portion 113, which can automatically register the words into said pseudonym-Chinese conversion dictionary if the specifically converted words are not registered in said pseudonym-Chinese conversion dictionary; an automation-removal portion 114, which can automatically removes the unnecessary words, which have not been used longer than a pre-determined time, from the words that have been registered in said pseudonym-Chinese conversion dictionary according to said automation-registration portion 113.
Patent TW-423128-B (TW)
Title: Chip scale package structure
Inventor: SU CHING-HUEI
IPC: H01L23/28
Filed: 1999-10-26
Granted: 2001-02-21
Abstract: This invention is about chip scale package (CSP) structure that mainly includes a semiconductor chip installed on the substrate surface and sealed by an encapsulation body. This encapsulation body includes a resin base material that is divided into the first layer and the second layer. This resin base material includes plural filler particles, in which the content of the filler particle in the first layer is smaller than the content of the filler particle in the second layer. Because the coefficient of thermal expansion (CTE) of filler particle is smaller, the CTE of the second layer is smaller to function as the buffer of the stress generated by CTE mismatch between substrate and chip. Additionally, the content of filler particle in the second layer is larger such that the invasion of water moisture can be effectively prevented and the problem of delamination or die cracking can be improved.
Patent TW-460810-B (TW)
Title: Device and method to execute plural matrix multiplication operations
Inventor: SHIU RUNG-FU
IPC: G06F17/16
Filed: 1999-11-30
Granted: 2001-10-21
Abstract: In a device and method to execute plural matrix multiplication operations containing a variable (X) and two coefficients (a), (b), each item of a lookup table is constructed to be corresponding to one value of the variable (X) and has a first and second data fields to store the encoded multiplication product related to the coefficients (a), (b). When the variable (X) is used for addressing the lookup table, the encoded multiplication products of the first and second data fields of the addressed item are generated from the first and second output terminals of the lookup table respectively. A decoder processes the encoded multiplication products from the first and second output terminals of the lookup table to obtain the result of the matrix multiplication operation, just like executing the mathematical association operation.
Patent TW-517073-B (TW)
Title: Gel-type copolymer beads and ion exchange resins made therefrom
Inventor: STAHLBUSH JAMES R
IPC: B01J39/04
Filed: 1999-12-07
Granted: 2003-01-11
Abstract: Gel-type copolymer beads are described which are useful as ion exchange resins such as those used in the treatment of power plant condensate water. The subject copolymer beads possess an interpenetrating polymer network of at least two polymer components including: (i) a first polymer component derived from a first monomer mixture comprising a first monovinyhdene monomer having a styrenic content less than about 50 molar percent and (ii) a second polymer component derived from a second monomer mixture comprising: a second monovinyhdene monomer having a styrenic content greater than about 50 molar percent and a second crossing agent. The ratio of the molar percent crossing agent of the first polymer component to the second polymer component is less than about 0.7. Methods for making the subject beads and methods for their use as ion exchange resins for treating aqueous solutions are also provided.
Patent TW-449753-B (TW)
Title: Conical shaped seismic guide pins and mating openings
Inventor: DALKE CHARLES ARTHUR
IPC: G21C5/10
Filed: 2000-03-14
Granted: 2001-08-11
Abstract: A top guide (20) to shroud head (22) interface (28) is described. In one embodiment, the interface (28) includes a top guide (20) that includes a flange (24) that is configured to engage a corresponding flange (26) of the shroud head (22). The top guide flange (24) includes a plurality of frusto-conical shaped guide pins (42) extending from the top surface (38) of the flange (24). The shroud head flange (26) includes a plurality of guide pin openings (44) configured to align with the guide pins (42) located on the top guide flange (24). Each guide pin opening (44) includes a frusto-conical portion (46) that extends through the flange (26) from the bottom surface (40) of the shroud head flange (26) and has a slope equal to the slope of the frusto-conical pins (42). Each guide pin opening (44) also includes a cylindrical portion (50) that extends from the small base (52) of the frusto-conical portion (46) of the guide pin opening (44) to the top surface (54) of the shroud head flange (26). The diameter of the frusto-conical guide pin opening (44) at the bottom surface (40) of the shroud head flange (26) is configured to be larger than the diameter of the frusto-conical guide pin (42) immediately adjacent the top surface (38) of the top guide flange (24). The frusto-conical guide pins (42) and guide pin openings (44) provide for suitable clearances between the guide pins (42) and the guide pin openings (44) to accommodate any flexing of the shroud head flange (26) during installation.
Patent TW-I228641-B (TW)
Title: Color resist by chemical amplify compositions
Inventor: WU JUNG-LUNG
IPC: G02F1/133
Filed: 2000-01-05
Granted: 2005-03-01
Abstract: A photosensitive color resist comprises: (a) a transparent acrylic copolymer having 1-15 mol % of carboxyl group, 1-15 mol % of hydroxyl group, 30-50 mol % of TERTIARY-BUTYL ESTER base, and 5-20 mol % of phenyl group; (b) an organic paint; and (c) photo-acid generator, and color filter produced thereby.
Patent TW-464752-B (TW)
Title: Double column system for the low-temperature fractionation of air
Inventor: SCHOENECKER HERBERT
IPC: F25J3/04
Filed: 2000-05-17
Granted: 2001-11-21
Abstract: The process and the apparatus serve for the low-temperature fractionation of air in a rectification system that has at least one pressure column (14) and one low-pressure column (15). Feed air (1) is compressed (3) to a first pressure p1 in a first compressor (3), purified in a purification stage (6), cooled (12) and at least in part introduced (13) into the pressure column (14). At least one liquid fraction (24) from the pressure column (14) is fed (26, 27) into the low-pressure column (15). A nitrogen-rich fraction (32) from the low-pressure column (15) is warmed (25, 12) and mixed with feed air (7). The warmed nitrogen-rich fraction (33) is mixed with the feed air (7) downstream of the feed air purification stage (6). The mixture (8) of feed air and nitrogen-rich fraction is further compressed in a second compressor (9) to a second pressure p2 which is higher than the first pressure p1.
Patent TW-552639-B (TW)
Title: Method for forming interlayer insulating film and its semiconductor device
Inventor: MAEDA KAZUO
IPC: H01L23/522
Filed: 2000-03-09
Granted: 2003-09-11
Abstract: A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an underlying insulating film on an object to be formed; and forming a porous SiO2 film on the underlying insulating film by a chemical vapor deposition that employs a source gas containing tetra-ethyl-ortho-silicate (TEOS) and ozone (O3) where the O3 is contained in the source gas with a first concentration that is lower than the concentration necessary for oxidizing the TEOS. An alternative method for forming an interlayer insulating film is also disclosed. This method comprises the step of: forming an underlying insulating film on an object to be formed; performing chlorine plasma treatment for the underlying insulating film; and forming a porous SiO2 film on the underlying insulating film by a chemical vapor deposition that employs a source gas containing TEOS and O3.
Patent TW-486913-B (TW)
Title: Reproducing apparatus and reproducing method
Inventor: YOKOTA TEPPEI
IPC: G10L19/00
Filed: 2000-03-14
Granted: 2002-05-11
Abstract: A reproducing apparatus for reproducing data from a record medium having a program area and a management area, the program area being used for recording a plurality of files, the management area being used for managing forging prohibition information against a particular file recorded in the program area is disclosed, the apparatus comprising a calculating means for calculating the forging prohibition information managed in the management area of the record medium whenever a file recorded in the record medium is reproduced, a comparing means for comparing a value calculated by the calculating means corresponding to a former reproduction command with a value calculated by the calculating means corresponding to a current reproduction command, and a controlling means for permitting the file corresponding to the current reproduction command to be reproduced when the value calculated corresponding to the former reproduction command is the same as the value calculated corresponding to the current reproduction command as the result of the comparing means.
Patent TW-I283677-B (TW)
Title: A polymorphic form of 5-[4-[2-(N-methyl-N-(2-pyridyl)amino)ethoxy]benzyl]thiazolidine-2,4-dione maleic acid salt, the preparation process and pharmaceutical composition thereof
Inventor: BLACKLER PAUL DAVID JAMES
IPC: A61P/
Filed: 2000-05-11
Granted: 2007-07-11
Abstract: A polymorphic form of 5-[4-[2-(N-methyl-N-(2-pyridyl)amino)ethoxy]benzyl]thiazolidine-2,4-dione, maleic acid salt (the ""polymorph"") characterised in that it provides: (i) an infrared spectrum containing peaks at 1763, 912, 856 and 709 cm<-1>; and/or (ii) a Raman spectrum containing peaks at 1762, 1284, 912 and 888 cm<-1>; and/or (iii) a solid-state 13C nuclear magnetic resonance spectrum containing peaks at 111.0, 113.6, 119.8, 129.1, 130.9, 131.8, 134.7, 138.7, 146.5, 152.7, 157.5, 169.5, 171.0, 178.7 ppm; and/or (iv) an X-ray powder diffraction (XRPD) pattern which gives calculated lattice spacings at 5.87, 5.30, 4.69, 4.09, 3.88, 3.61, 3.53 and 3.46 Angstroms; a process for preparing such a compound, a pharmaceutical composition containing such a compound and the use of such a compound in medicine.
Patent TW-I237122-B (TW)
Title: Method and apparatus for circuit board continuity test, tool for continuity test, and recording medium
Inventor: YAMAOKA SHUJI
IPC: H05K3/00
Filed: 2000-05-19
Granted: 2005-08-01
Abstract: The present invention provides an apparatus and method for inspecting electrical continuity of a circuit board, capable of decreasing the impedance in a current path as an inspection object to achieve enhanced SN ratio. A coupling capacitance is formed at one of terminals of a pattern wire on a board as an inspection object in a non-contact manner, and an inductance (450) and a lead wire are connected to this capacitance. An AC inspection signal is applied to the other terminal through the lead wire in a contact manner. A resonance circuit is defined by the capacitance, inductance and pattern wire, and thereby an output signal can be detected with lowering the impedance.
Patent TW-452518-B (TW)
Title: Tool positioning method, tool positioning apparatus and excitation device for tool-positioning
Inventor: KOKUBO KUNIHIKO
IPC: B23Q17/22
Filed: 2000-06-01
Granted: 2001-09-01
Abstract: A tool positioning apparatus for positioning a tip end of a tool in relation to a central axis of a bar to be machined is disclosed. The tool positioning apparatus (10) includes a spherical member (16) having an electrically conductive surface region (16a); an abutting mechanism (22) for abutting the spherical member (16) to an inner peripheral edge (20a) of an end opening (20) of a chucking member (18) capable of chucking the bar to be machined and for keeping the spherical member which is partially received in the end opening (20) in a coaxial arrangement; a driving mechanism (60) for bringing a tool (28) to be positioned into contact with the conductive surface region of the spherical member; an excitation mechanism (24) for flowing an electric current between the tool and the conductive surface region of the spherical member while in a mutually contacting state; a contact-position deciding part (34) for detecting an electrical conduction between the tool and the conductive surface region of the spherical member caused by the excitation mechanism and deciding a position of a contact point of the tool; and a correcting operation part (36) for determining a location of a center (16c) of the spherical member on the basis of the decided position of the contact point of the tool and for suitably correcting predetermined processing positional data of the tool in accordance with the determined location of the center.
Patent TW-478096-B (TW)
Title: Method of silicide formation in a semiconductor device
Inventor: SRINIVAS RAMANUJAPRAM A
IPC: H01L21/28
Filed: 2000-09-15
Granted: 2002-03-01
Abstract: A method of forming a silicide layer in contact with a silicon substrate. The method comprises forming the silicide layer by supplying a silicon-containing source that is different from the silicon substrate, such that the silicon in the silicide layer originates primarily from the silicon-containing source.