baber/WOPTO huggingface dataset:
Patent JP-H0437479-A (JP)
Title: Feeding device
Inventor: TODOROKI MASAAKI
IPC: B23K11/11
Filed: 1990-06-01
Abstract: PURPOSE:To prevent damage and shortening of the operating service life of a feeding cable to supply electric power to a spot welding gun by constituting the feeding device of a feeding bus bar, an engaging body, a couple of electrodes, a pressurizing means and a cable. CONSTITUTION:When the spot welding gun 7 moves to the operating position, the cable 25 connected with the welding gun 7 pulls the engaging body 45 at the feeding bus bar 13 side. Consequently, the engaging body 45 moves and displaces the feeding bus bar 13 face smoothly in the longitudinal direction and follows the movement of the welding gun 7. When the welding gun 7 then stops at the operating position, air cylinders 21 and 21' are operated and the electrodes 23a and 23b are press-contacted on the feeding bus bars 13a and 13b, and the feeding bus bar 13. In this state, electric power is supplied to the welding gun 7 via the feeding bus bar 13, the electrodes 23a and 23b and the cable 25 from a power source transformer 3A and the welding gun 7 is operated. Accordingly, the excessive force is not added to the cable 25 and the cable service life is extended.
Patent JP-S5846644-A (JP)
Title: Semiconductor element
Inventor: YAMAJI TETSUO
IPC: H01L21/768
Filed: 1981-09-14
Abstract: PURPOSE:To prevent the intrusion of moisture, and to improve wetproof property by using a surface protective film in which amorphous silicon is positioned among an electrode, aluminum wiring and a nitride film. CONSTITUTION:The aluminum wiring 4 is formed onto an intermediate insulating film 3 as an electrode material, and the amorphous silicon 5 through plasma CVD is stacked. The nitride film 6 through plasma CVD is stacked, and a hole is bored to a bonding pad section. The aluminum wiring 4 and the amorphous silicon 5 are alloyed through sintering treatment lastly executed in a pre-treatment process and adhesive property is improved, and the intrusion of moisture is prevented and wetproof property is improved even in a section where there is no wiring pattern of the aluminum wiring 4 because adhesive property between PSG and the amorphous silicon is excellent. The amorphous silicon 5 can be formed only by changing an introducing gas by using a plasma CVD nitride- film forming device.
Patent JP-S5367951-A (JP)
Title: Ventilation system
Inventor: OOHAYASHI KOUICHI
IPC: F24F7/06
Filed: 1976-11-30
Abstract: PURPOSE: To efficiently exhaust the air in a kitchen equipment with necessary parts by providing an openable damper at a duct case having one exhaust fan. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S6035917-A (JP)
Inventor: GOINO YOUICHI
IPC: H02M7/06
Filed: 1983-08-05
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0816785-A (JP)
Title: Image recognition device and method
Inventor: OKAJIMA KENJI
IPC: G06T7/00
Filed: 1994-06-27
Abstract: PURPOSE:To enable valid pattern segmenting processing even when there is a background pattern, in which the position is adjacent to an object pattern, and there is an overlap even in a spatial frequency area. CONSTITUTION:This device is provided with an image input part 1 for inputting and storing an image, Fourier transformation part 2 for performing Fourier transformation for each small area in the input image and calculating its power, candidate pattern selecting part 3 for selecting candidate patterns by previously storing a similarly transformed reference pattern and matching it with the pattern of the input, phase correcting part 4 for estimating position deviation between the selected candidate patterns and the pattern in the input image and correcting the deviation of phases caused by that position deviation, inverse Fourier transformation part 5 for calculating inverse Fourier transformation from the candidate pattern for which the deviation of the phase is corrected, and segmenting processing part 6 for segmenting the candidate pattern from the input while using the image reproduced by inverse Fourier transformation.
Patent JP-H021972-A (JP)
Title: Non-volatile semiconductor memory device
Inventor: TERADA YASUSHI
IPC: H01L27/115
Filed: 1988-06-10
Abstract: PURPOSE:To facilitate the layout of a differential amplifying circuit by a method wherein a memory cell array is structured in a folded bit wire constitution that the differential amplifying circuit is connected between a first and a second bit wire, which compose a pair of bit wires adjacent to each other. CONSTITUTION:An erasure ('1' writing) is performed by a group unit, all word lines WL1 (WL2) are set at a voltage VPP level through a row decoder RD connected to a memory cell of a group 1 (2) an output of a control gate voltage generating circuit 1 is made VPP, and a data, which makes a potential of the differential amplifying circuit on a bit lines BL1 (BL2) side '1', is latched, whereby the potential of the bit line BL1 (BL2) is made to an 'L'. In result, electrons are injected into a floating gate of a memory transistor MQ to make its conductance lower than that of the memory transistor MQ of a dummy cell DC.
Patent JP-H10299400-A (JP)
Title: Impervious wall in tunnel
Inventor: MIYABE TATSUO
IPC: E21F17/16
Filed: 1997-04-24
Abstract: PROBLEM TO BE SOLVED: To store water in a tunnel by connecting a load receiver to a connection bolt of a plurality of segment joint pieces through a shear block, and supporting an impervious wall. SOLUTION: A shear block 5 having a screw hole is fitted to a connection bolt 4 of a segment joint piece par 3a. A plurality of shear blocks 5 are mounted in a plurality of rows on the metal pieces 3a on the whole periphery of a segment 3. A load receiver 2 consisting of the reinforced concrete 7, etc., is constructed in the vicinity of the shear blocks 5, and the hydrostatic pressure received by an impervious wall 1 is transmitted to the segment 3 through the shear blocks 5. Water can be stored in the prescribed section by providing the impervious wall at an arbitrary position in the tunnel, and if the impervious wall is provided rearward of the tunnel under execution, the in-flow of the floods, etc., be prevented and the execution can be achieved without delay.
Patent JP-S5477097-A (JP)
Title: Flickering device for vehicles
Inventor: MIZUNO CHIAKI
IPC: B60Q1/38
Filed: 1977-12-01
Abstract: PURPOSE:To control a flickering driving circuit, elimimate the need for memory functions and enable flickering operation to be performed stably to noise by judging the opening and closing operations of a direction indicating switch with a simple logic constitution through the effective utilization of plural control information quantities. CONSTITUTION:The device has a power source 10, a switch 11, a current detecting resistance 6, a relay 5 and a series connection path to a direction indicating lamp 8 via direction indicating switch 7. When the switch 7 is closed, an integrated circuit 8 intermittently drives the relay 5 to cause the indicating lamp 8 to flicker. When in the circuit 9 a comparator 1 detects the disconnection of the indicating lamp 8, it applies a discrimination signal 16 to a flickering driving circuit 3, thereby changing the filckering condition of the direction indicating lamp 8. A comparator 2 detects the opening and closing states of the switches 7, 5b and outputs a detection signal 17 to a flickering operation control circuit 15. The circuit 15 suitably controls the operation of the circuit 3 by the output 17 and the signal from L terminal 12.
Patent JP-S626479-A (JP)
Title: Head disk assembly
Inventor: KAWADA SHINICHI
IPC: G11B33/12
Filed: 1985-07-03
Abstract: PURPOSE:To prevent a head disk assembly from abnormal abrasion generated at the movement of a carriage or the like by previously mixing oxygen corresponding to oxidation into the head disk assembly filled with sealed helium. CONSTITUTION:Oxygen corresponding to 1-20% inner capacity is mixed into the head disk assembly for a magnetic disk device which is filled with inert gas. Abrasion is inevitably generated in a certain position of a driving part, and if no oxygen exists, abnormal abrasion is generated. In case of normal operation, the quantity of abrasion is about several-ten mg, and the volume of oxygen to be required for the abrasion is several-ten CC when it is supposed that iron Fe2 is oxidized to Fe5O4 through the capacity is changed in accordance with the material of the abraised unit. The mixing of air or oxygen of this volume does not exert influence upon the helium sealing effect, i.e. the reduction of heat generation due to the rotation of the disk or the reduction of disk vibration.
Patent JP-S5770260-A (JP)
Title: Steel suitable to be subjected to rapid carburizing
Inventor: INOUE TSUYOSHI
IPC: C22C38/22
Filed: 1980-10-16
Abstract: PURPOSE: To provide a steel adapted to rapid carburizing, wherein when subjected to carburizing, the carburizing time can be reduced, by preparing the steel to contain specified proportions of C, Si, Mn and Cr with the carburized depth index being a specified value or more.  
     CONSTITUTION: The steel is prepard to contain 0.15W0.22% of C, 0.14% or below of Si, 0.7W1.5% of Mn and 1.5% or below of Cr with the carburized depth index (CD) given in the equation: CD=20×C%+2×Cr%+Mn%-4Si% being 7 or more. When the steel thus obtained is subjected to carburizing in a conventional carburizing pit at a carburizing temperature within a period of about 5hr, the carburizing time is positively reduced by about 20% or more. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-S5369483-A (JP)
Title: Reflecting non-straight tubular fluorescent lamp
Inventor: KUROSAKI TOSHIHIKO
IPC: H01J61/35
Filed: 1976-12-03
Abstract: PURPOSE: To hold down the drop in the whole luminous flux to a minimal and improve downward intensity of lumination even in ring-shaped or U-shaped bent tube with the thickness of a reflecting film on the inner surface of a fluorescent lamp set at 1.5 to 0.5 mg/cm 2 . 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H05314167-A (JP)
Title: Sentence expression analysis method
Inventor: SHIMATANI YASUTOSHI
IPC: G06F17/27
Filed: 1992-05-11
Abstract: PURPOSE:To automatically prepare a clearly expressed sentence by analyzing the sentence prepared with ambiguous expression. CONSTITUTION:The modification of clauses on a modifier side is clarified in a processor 2 provided with a clause detection part 2a and a phrase detection part 2b for detecting the clauses and the phrases of the sentence as the subject of analysis, a modification detection part 2c for detecting the modification of the clauses and the phrases, a clause number calculating part 2d for calculating the number of the clauses of the phrases on the modifier side and an arrangement control part 2e for rearranging the phrases on the modifier side so that the phrases on the modifier side are positioned in front of the clauses on the modifier side and also the phrases on the modifier side with a lot of clauses are positioned in the front part of the sentence. Also, the modification of the clauses on the modifier side is clarified in the processor 2 provided with a punctuation control part 2f in stead of the arrangement control part 2e for inserting punctuation marks between the clause and the phrase on the modifier side to clarify a boundary between the clauses and the phrases on the modifier side when the clauses on the modifier side are positioned in front of the phrases on the modifier side.
Patent JP-S5478075-A (JP)
Title: Sample image display device
Inventor: SAITOU KOUJI
IPC: H01J37/28
Filed: 1977-12-05
Abstract: PURPOSE: To make the whole of display clear and facilitate operation by magnifying only an arbitrary important part on a displayed sample at a large scale factor and observing this part.  
     CONSTITUTION: Electron beam 3 from electron gun 2 is focused by focusing lense system 4 and is irradiated on sample 5 which is put on sample moving stand 19. At this time, horizontal and vertical scanning coils 9X and 9Y are previously provided between lense system 4 and sample 5, and signals from horizontal and vertical signal generators 6X and 6Y are applied to these coils through scale factor variable circuit 7 and power amplifier 8. Next, two-dimensional electrons from sample 5 are detected by detector 10 and are applied to the grid of cathode-ray tube 12 as brightness modulation signals through video amplifier 11. Meanwhile, scanning signals from generators 6X and 6Y are applied to horizontal and vertical scanning coils 14X and 14Y of cathode-ray tube 12 through power amplifier 13. After that, the reference voltage and the polarity of horizontal and vertical reference power sources 18X and 18Y are changed to magnify a desired position of sample 5 and display this position on cathode-ray tube 12. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-S5478073-A (JP)
Title: Assembling method of electron gun
Inventor: SADAKANE TADAYOSHI
IPC: H01J29/48
Filed: 1977-12-05
Abstract: PURPOSE: To regulate mutual positions by the non-contact method, by moving relatively two opposite electrodes which a high voltage is applied to, while spraying dry air to the gap between these electrodes, and by stopping to move and fixing them when the air flow reaches a prescribed value.  
     CONSTITUTION: After assembling an electron gun, the electron guns (denoted as auxiliary electron guns after this) other than the fourth grid electrode 2 are first fitted to supporter 11 which supports the fourth grid electrode 2. Next, these auxiliary electron guns are inserted to fixing plate 21, and spacers 5 and 6 are inserted between the third electrode 3 and the second electrode 7 as well as the second electrode 7 and the first electrode 8 respectively and are pressed by spring 10. After that, electrode 2 is inserted to center pin 22 with a nozzle, and pin 22 is caused to approach auxiliary electron guns gradually to spray dry air from the nozzle to fixing plate 21. Thus, the quantity of air flow at this time is measured by flowmeter 23; and when this quantity reaches a prescribed value, electrode movement is stopped to weld electrode 2 to supporter 11. AFter that, center pin 22, fixing plate 21, etc., are removed. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H02211229-A (JP)
Title: Hollow yarn membrane
Inventor: YAMAMOTO TAKUYA
IPC: A61M1/18
Filed: 1989-06-09
Abstract: PURPOSE:To eliminate the loss of useful protein by forming a hollow membrane made of regenerated cellulose having hollow parts continued and pierced in a fiber axis direction and set to a specific range in a water-containing void ratio and an albumin sieve coefficient at the time of the filtering of blood. CONSTITUTION:A cuprammonium rayon spinning solution is emitted from a double spinning die along with a non-coagulable hollow part forming agent to be passed through a non-coagulable atmosphere and subsequently introduced into a coagulation bath to form a hollow yarn membrane made of regenerated cellulose having a pore size larger than a conventional one. This hollow yarn membrane has hollow parts in its fiber axis direction and has characteristic values such that the water-containing void ratio of said membrane at a wet time is 76-95%, an albumin sieve coefficient at the time of the filtering of blood is 0.15 or less and a membrane area is 1.3m<2> or more. This hollow yarn membrane is excellent in the removal capacity of a high-molecular substance other than beta2-microglobulin and can suppress the loss of useful protein.
Patent JP-H10336446-A (JP)
Title: Image processor, image processing method, and recording medium recording dither processing control program
Inventor: TAKAYANAGI MASAHIRO
IPC: H04N1/405
Filed: 1997-06-03
Abstract: PROBLEM TO BE SOLVED: To reduce a storage capacity of a dither table to generate a threshold level for dither processing. SOLUTION: A data table 601 that receives input of a table address corresponding to a position of a pixel provides outputs of 2-bit model selection signals (4 kinds) and three 5-bit fine tuning data 1-3, a model data storage section 602 provides an output of 3 3-bit model threshold levels 1-3. Low-order 5-bit fine tuning data 1-3 are added to the high-order 3-digit model threshold levels 1-3 to generate actual 8-bit threshold levels 1-3. The generated threshold levels are fed to a 4×4 dither processing circuit, in which an 8-bit image is converted into 2bit dither signals.
Patent JP-S63310167-A (JP)
Title: Semiconductor device
Inventor: OSHIMA TAKU
IPC: H01L27/102
Filed: 1987-06-12
Abstract: PURPOSE:To make a static memory or the like composable of only a transistor, by using the transistor with a positive amplification factor in a single unit. CONSTITUTION:A transistor having a positive amplification factor is a hot electron transistor with a quantum mechanical well 1 in its base layer and this transistor is provided with a well width which is KT/2 or less in its difference between energy 3 on a maximum stage of an electronic sub-band 2 formed in the quantum mechanical well 1 and energy of a barrier 4 on the end of the well, where k is a Boltzmann's constant and T is a temperature (absolute temperature). A feedback means is inserted between a collector and a base, and a load is connected with the collector. A static memory or the like can be thus composed of only a transistor.
Patent JP-H06333769-A (JP)
Title: Fixing structure for terminal pin in small-sized electric winding component
Inventor: KIJIMA SEIICHI
IPC: H01F27/29
Filed: 1993-05-26
Abstract: PURPOSE:To prevent the generation of cracks of a bobbin part fixing a terminal pin for surely fixing the terminal pin in the fixing structure of the terminal pin in the small-sized electric winding components. CONSTITUTION:A pin insertion hole 52 is formed of an outer hole 52a near the bobbin outer face and an inner hole 52b communicating with the outer hole 52a and a terminal pin 53 is inserted from the outer hole 52a formed larger than a sectional shape of this terminal pin 53 for being pressed in and fixed by the inner hole 52b.
Patent JP-S5936108-A (JP)
Title: Manufacture of polybutadiene
Inventor: TSUJIMOTO NOBUHIRO
IPC: C08F136/06
Filed: 1982-08-24
Abstract: PURPOSE:To obtain titled polymer suitable for impact-resistant polystyren-based resin, by carrying out a polymerization of 1,3-butadiene in the presence of a catalytic system comprising a cobalt compound, halogen-contg. organoaluminum compound, water, and dithiocarbamic acids. CONSTITUTION:The objective polybutadiene can be obtained by carrying out a polymerization of 1,3-butadiene in the presence of a catalytic system comprising (A) a cobalt compound (e.g., cobalt octenate), (B) a halogen-contg. organoaluminum compound, (C) water or a polyhydric alcohol (e.g., ethylene glycol), and (D) dithiocarbamic acid analogue(s) (e.g., diethyl thiocarbamic acid). EFFECT:Capable of obtaining high-molecular weight polybutadiene with relatively high contents of both cis-1,4 and cis-1,2 structural units.
Patent JP-S63309990-A (JP)
Inventor: ASAKA TAKAO
IPC: G09G1/00
Filed: 1987-06-11
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H06334731-A (JP)
Title: Communication terminal equipment
Inventor: TAKEDA HIROSHI
IPC: H04M1/65
Filed: 1993-05-25
Abstract: PURPOSE:To utilize effectively a recording area of a recording medium recording a message received from a caller in the arrival of a call during absence of the user. CONSTITUTION:A voice recognition device 7 detects the presence of voice information in an input signal from a public line network recorded in a recorder 5 when the input signal received from the public line network is recorded in the recorder 5 till a CPU 9 detects interruption of a channel by a busy tone from the public line network after an absence notice message is sent to the public line network and when no voice information is in existence, it is discriminated that the telephone call is interrupted by the opposite party without inputting any message and the input signal from the public line network recorded in the recorder 5 is erased under the control of the CPU 9. When the opposite party interrupts the phone call without telling any message, waste of the recording area of the recording medium is prevented through the recording of a meaningless input signal in the silence state.
Patent JP-S5370027-A (JP)
Title: Electrical contact point material and production thereof
Inventor: SHINTA SANKICHI
IPC: C22C5/06
Filed: 1976-12-03
Abstract: PURPOSE:To impr-ve the wear and fusion resistance of an Ag-Bi2O=3 type electrical contact point material by adding one or more out of oxides of Cu, In and Zn.
Patent JP-H08340001-A (JP)
Title: Solder bump forming method and equipment
Inventor: YAMAGISHI YASUO
IPC: H01L21/60
Filed: 1995-06-13
Abstract: PURPOSE: To prevent the sticking of solder paste on the surface of a plate part member and exclude incorrect metering, by heating the plate part member and forming solder balls in recessed parts after a plurality of the recessed parts of the plate part member are filled with the solder paste, the solder paste left on the surface of the plate part member is scraped off by using a hard knife edge, and metering is performed. CONSTITUTION: A squeegee 18 is slided along the surface of a plate part member 10 having a plurality of recessed parts 12, which are filled with solder paste supplied on the surface. A hard knife edge 22 forming an obtuse angle to the plate part member in the sliding direction is slided along the surface of the plate part member. The solder paste left on the plate part member is scraped off, and accurate metering is performed. By heating the plate part member 10, solder particles contained in the solder paste 14 in the recessed parts 12 are fused, and solder balls 20 are formed by the effect of surface tension. Electrode pads 24 of a semiconductor chip 22 are made to abut against the solder balls 20, which are transferred to the electrode pads 24 from the plate part member 10.
Patent JP-S5935484-A (JP)
Title: Solar cell
Inventor: IIDA AKIZOU
IPC: H01L31/04
Filed: 1982-08-23
Abstract: PURPOSE:To contrive to enhance property modifying facility and to reduce cost of the solar cell by a method wherein groove structure is provided on a substrate, and semiconductor single crystal films are made to grow thereon. CONSTITUTION:The lattice type metal film 8 is constructed on the glass substrate 7. The N type (or the P type) semiconductor 2 is made to grow on the film 8 and the substrate 7 thereof. Then the P type (or the N type) semiconductor 3 is made to grow on the semiconductor 2, and an ohmic electrode 9 is provided on the semiconductor 3. Sunlight enters through the substrate 7, passes the intervals of the electrode 8, and permeates into the layers 2, 3 to generate electromotive force. According to the construction thereof, the lattice type or the grating type electrode 8 possesses both of groove structure to make a single crystal to grow. Accordingly, the superior crystal film close to the single crystal can be formed, and the solar cell of high performance and low cost can be obtained.