Patent GB-909271-A (GB)
Title: Improvements in or relating to the siliconizing of shaped refractory bodies
IPC: C04B35/573
Filed: 1959-02-13
Abstract: A siliconized shaped refractory body is manufactured by heating a refractory material and/or carbon in the presence of silicon nitride and in an inert atmosphere at least to the decomposition temperature of silicon nitride.  Refractory material may be silicon carbide, or carbide of boron, titanium, zirconium, niobium, or tantalum alone, or in admixture with SiC.  The inert atmosphere may be helium argon, hydrogen, or nitrogen, and when hot pressing may be the N2 formed. Where a shaped body of refractory alone is heated in contact with SiN at above 1900 DEG C. the Si formed impregnates the body.  When carbon is present SiC is also formed.  Specific examples refer to: (1) a pressed shape of granular SiC and temporary binder impregnated with Si by heating in contact with SiN; (2) heating a silicon nitride bonded silicon carbide shape in the presence of SiN to form SiC impregnated with Si; (3) hot pressing, e.g. at 1000-10000 p.s.i.g., a mixture of SiN and SiC at above 1900 DEG  C.; with, or without, pre-sintering of the mixture, to form Si and SiC; alternatively a mixture of Si and SiC may be nitrided at 1400 DEG C. in N2 to form the initial body; (4) carbon may be included in the mixture and may be stoichiometrically equivalent to the Si in the SiN to form dense SiC bodies; alternatively porous refractory bodies may be impregnated with carbon by carbonizing an impregnant phenol-formaldehyde solution, pyrolysis of hydrocarbon, e.g. CH4, or acidification of a furfural impregnant and SiC formed; (5) SiC bodies are formed by dispersing SiN in a solution of furfural and/or furfuryl alcohol, adding HCl, pouring into a mould, and heating the resulting shape first to eliminate volatiles and then to convert Si and C to SiC. Specifications 583,039, 828,211 and 901,176 are referred to.ALSO:A siliconized shaped refractory body is manufactured by heating a refractory material and/or carbon in the presence of silicon nitride and in an inert atmosphere at least to the decomposition temperature of silicon nitride.  Refractory material may be silicon carbide, or carbide of boron, titanium, zirconium, niobium, or tantalum alone, or in admixture with SiC.  The inert atmosphere may be helium, argon, hydrogen, or nitrogen, and when hot-pressing may be the N2 formed. Where a shaped body of refractory alone is heated in contact with SiN at above 1900 DEG C. the Si formed impregnates the body.  Specific examples refer to: (1) a pressed shape of granular SiC and temporary binder impregnated with Si by heating in contact with SiN; (2) heating a SiN bonded SiC shape in the presence of SiN to form SiC impregnated with Si.  Specifications 583,039, 828,211 and 901,176 are referred to.ALSO:A siliconised shaped refractory body is manufactured by heating a refractory material and/or carbon in the presence of silicon nitride and in an inert atmosphere at least to the decomposition temperature of silicon nitride.  Refractory material may be silicon carbide, or carbide of boron, titanium, zirconium, niobium, or tantalum alone, or in admixture with SiC.  The inert atmosphere may be helium, argon, hydrogen, or nitrogen, and when hot pressing may be the N2 formed.  Where a shaped body of refractory alone is heated in contact with SiN at above 1900 DEG C. the Si formed impregnates the body.  When carbon is present SiC is also formed.  Specific examples refer to (1) a pressed shape of granular SiC and temporary binder impregnated with Si by heating in contact with SiN; (2) heating a SiN bonded SiC shape in the presence of SiN to form SiC impregnated with Si; (3) hot pressing, e.g. at 1000-10000 psig, a mixture of SiN and SiC at above 1900 DEG C., with, or without, pre-sintering of the mixture, to form Si and SiC; alternatively a mixture of Si and SiC may be nitrided at 1400 DEG C. in N2 to form the initial body; (4) carbon may be included in the mixture and may be stoichiometrically equivalent to the Si in the SiN to form dense SiC bodies; alternatively porous refractory bodies may be impregnated with carbon by carbonising an impregnant phenol-formaldehyde solution, pyrolysis of hydrocarbon, e.g. CH4, or acidification of a furfural impregnant and SiC formed. Specifications 583,039, 828,211 and 901,176 are referred to.