baber/WOPTO huggingface dataset:
Patent JP-H0711659-A (JP)
Title: Anchoring of retaining wall
Inventor: YAMADA AKIYO
IPC: E02D5/80
Filed: 1993-06-28
Abstract: PURPOSE:To increase rustproof effect of anchoring members to fix a retaining wall to stably and early settle it in the ground and facilitate the construction work without use of other materials except the anchoring members and grouting materials. CONSTITUTION:A retaining wall block 1a is erected and filling 2a is charged at the rear side of the block 1a. A part of a tension member 3 is inserted in a straight sheath 4 and other part is inserted in a deformed sheath 5 and a cement paste 6 as a cement curing agent is stuffed into the sheath 5. The tension member 3 is placed on the filling 2a and one end thereof is connected to the retaining wall block 1a and a dry grout mortar 8 as a cement curing agent is placed around the deformed sheath 5. A filling 2b is further placed on the filling 2a and the mortar 8 is cured by the underground water. Wide breadth sections 9 are partly constructed by use of the cement curing agent.
Patent JP-S5971825-A (JP)
Title: Method and apparatus for forming inflation film of polyethylene
Inventor: WATANABE HARUMI
IPC: B29C48/10
Filed: 1982-10-19
Abstract: PURPOSE:To obtain a film superior in transparency and stability by a method wherein an ethylene copolymer is extruded and precooled by a first air cooling ring at a position immediately after the die, and then rapidly and uniformly cooled from both interior and exterior of the tube by a second air cooling ring for hardening at a position immediately before the frost line of the film. CONSTITUTION:When an inflation film is extrusion-molded using a copolymer of ethylene and alpha-olefine of C3-10, cooling air is first uniformly blown to a film 2 extruded out of an extrusion die 1 from a first air cooling ring 3 at a position immediately after the die, thus effecting preliminary cooling. Then, the film tube is cooled from the exterior using a second air cooling ring 4 spaced from the first air cooling ring 3 and from the interior using an inner cooling ring 5 at a position immediately before the frost line of the film so as to uniformly and rapidly cool it for hardening. Since the frost line is fluctuated depending on the extrusion conditions, it is desirable to make cooling using a ring 7 adjustable in its height.
Patent JP-H0231399-A (JP)
Title: Optical memory
Inventor: NAKAYAMA MASAAKI
IPC: G11C13/04
Filed: 1988-07-21
Abstract: PURPOSE:To increase the read operation speed by providing a light receiving body which receives afterglow of a phosphor, which is irradiated by a light emitting body, and converts it to an electric signal. CONSTITUTION:An optical memory consists of a light emitting body 11 which converts an electric signal to an optical signal, a phosphor 12 which has an afterglow characteristic and receives irradiating light L1 from the light emitting body 11, and a light receiving body 13 which receives afterglow L2 of the phosphor 12 and converts it to read information of the electric signal. The afterglow time of the phosphor 12 can be set in a wide range by selection of a fluorescent material. Since reception of afterglow L2 has not an influence upon the storage state of the phosphor 12 at all, it can be always in the read-out state. Thus, the read operation speed is increased.
Patent JP-S6074037-A (JP)
Title: Compiling system
Inventor: ITOU NORIYUKI
IPC: G06F9/45
Filed: 1983-09-30
Abstract: PURPOSE:To evade advanced control having a branch as much as possible by converting a part if-then-else-in a source program into a form CALL FUN (r, x, y); .... CONSTITUTION:Hardware instructions FUN r1, OP2, and OP3 which compare the value of an operand OP2 with the value of an operand OP2 and set 1 in a general register r1 when the operand OP2 is larger than the operand OP3 or 0 when not are defined. When a statement ''if (comparision expression) then (variable 1):=(expression 1); else (variable 2):=(expression 2); is compiled, the part of (comparison expression) is analyzed; when it is converted equivalently into x>y, the statement is converted into CALL FUN (r, x, y); (variable 1):=(variable 1)*(1-r)+(expression 1)*r; (variable 2):=(variable 2)*(1-r); and this statement is translated into machine words.
Patent JP-S5972131-A (JP)
Title: Forming method for metal and metallic silicide film
Inventor: FURUYAMA MITSUTOSHI
IPC: H01L21/28
Filed: 1982-10-19
Abstract: PURPOSE:To form a metal or a metallic silicide in necessary thickness selectively on an exposed Si substrate by selectively coating the substrate with the metal, changing the surface into the silicide and repeating the process. CONSTITUTION:An SiO2 film 2 on the Si substrate 2 is bored, a W layer 3 is formed selectively from WF6 at 450 deg.C through a CVD method, a W surface is turned into SiW 4 at 450 deg.C (a thermal-decomposition temperature or less of SiH4) by using SiH4, and W is similarly grown again, thus changing thin SiW4 into a W layer again. An opening can be filled completely with W by repeating the process. Source gases are combined so that a lower limit of a reaction temperature of the halide of W and Mo and Si is made lower than a lower limit of the thermal-decomposition temperatures of SiH4, SiCl2H2, SiCl3H and SiCl4, and the substances of compositions up to the metallic silicide from the metal can be grown selectively by selecting a substrate temperature. A carrier gas of He or N2 may be used. The opening is buried, an Al wiring 5 is formed, and the surface is coated with PSG6.
Patent JP-H0840794-A (JP)
Title: Recharging method in process for producing single crystal silicon
Inventor: MATSUO HIROOMI
IPC: C30B15/02
Filed: 1994-08-03
Abstract: PURPOSE:To provide a method for rapidly recharging a necessary amount of polycrystal silicon by operation of one time. CONSTITUTION:A fixed amount of lump polycrystal silicon 22 is fed to a housing jig 21 provided with through holes 21a. The polycrystal silicon 22 put in the housing jig 21 is heated by radiation heat of a melt 4 for a fixed time. The housing jig 21 charged with the heated polycrystal silicon 22 is immersed in the melt 4 and the lump polycrystal silicon 22 is melted in the melt. Consequently, the polycrystal silicon 22 in an amount required for recharging can be treated once. Since the polycrystal silicon 22 to be heated is lump, radiation heat is rapidly transmitted to the inside and the polycrystal silicon is heated in a short time, the contact area with the melt 4 is widened and the polycrystal silicon is melted in a short time to rapidly carry out recharging operation.
Patent JP-2000016946-A (JP)
Title: Hyperglycemic inhibitor and hepatopathy inhibitor
Inventor: MORI GIYOUMEI
IPC: A61P3/08
Filed: 1998-06-29
Abstract: PROBLEM TO BE SOLVED: To prepare the subject medicine having no troublesome problems in administration nor side-effect, etc., orally administrable and useful for prophylaxis and treatment for diabetes by including ingredients from Goodyera schlechtend aliana REICHB. fil. as an active principle. SOLUTION: This medicine contains ingredients from Goodyera schlechtend aliana REICHB. fil., pref. water or organic solvent extract derived from Goodyera schlechtend aliana REICHB. fil. The extract is prepared by crushing raw Goodyera schlechtend aliana REICHB. fil. as a whole or dried one and then by extracting it with water (pref. hot water) or an organic solvent (pref. methanol, etc.). The does is usually ca. 50-100 mg/kg (body weight)/day and is usually administered once to three times a day.
Patent JP-S6242400-A (JP)
Title: Semiconductor integrated circuit
Inventor: KACHI YOSHIO
IPC: G06F21/79
Filed: 1985-08-19
Abstract: PURPOSE:To prevent a program content of an EPROM from being read to the outside of a LSI through a test of the EPROM and to facilitate the test by providing a read inhibition signal generating circuit, an I/O buffer circuit, and the 1st and 2nd gate circuits. CONSTITUTION:A read inhibition signal 21 is made active at the 3rd test mode and a gate circuit 6 applies the 3rd test mode signal to an I/O buffer circuit 4 and a gate circuit 5 closes an address signal 22 from a logic circuit 2. The I/O buffer circuit 4 is in the output mode in response to the 3rd test mode signal and a potential at an external address signal terminal 9 is fixed to a prescribed level potential from the gate circuit 5. An output from the EPROM 1 is closed by a gate circuit 8 at the same time and the level of the test terminal of the EPROM output is fixed to a prescribed value regardless of the output of the EPROM 1. Thus,the content of the EPROM read externally is prevented.
Patent JP-H1123954-A (JP)
Title: Method for adjusting image-forming position of two-focus variable power optical system, and two-focus variable power optical system
Inventor: KOKUBO MASAHIKO
IPC: G02B15/00
Filed: 1997-07-08
Abstract: PROBLEM TO BE SOLVED: To provide the method for adjusting an image-forming position of a two-focus variable power optical system by which the absolute precision is unnecessitated for machining lenses, etc., and re-focusing operation is unnecessitated at the time of varying power. SOLUTION: At step 1, a lens-barrel 61 of a 2nd reducing optical system 60 is fixed at a designed center position on a base. At step 2, a variable power mechanism of a 2nd reducing optical system is adjusted, and a cam position of the variable power mechanism is adjusted so that a reduced image IMG becomes to be of a desired size on an exposure surface ES. At step 3, a difference S2-S1 between an image-forming position S1 when the 2nd reducing optical system shows a 1st reduction ratio (m1) and an image-forming position S2 when the 2nd reducing optical system shows a 2nd reduction ratio (m2) is obtained. At step 4, it is judged whether or not the difference S1-S2 between the image-forming positions is a predetermined tolerance (δ) or less.  When it is judged that the difference exceeds the tolerance (δ), the lens-barrel of the 2nd reducing optical system is moved in the direction of ±Z by Z-fine adjustment mechanism. When the difference does not exceed the tolerance (δ), the lens-barrel is fixed at step 6.
Patent JP-H0928314-A (JP)
Title: Automatically cooking apparatus
Inventor: YAMADA YOSHIMASA
IPC: A23L35/00
Filed: 1995-07-19
Abstract: PROBLEM TO BE SOLVED: To ensure the operation of an automatically cooking apparatus by detecting the amount of a food material with a food material sensor for each start of a conveyor and supplementing the apparatus with a definite amount of the food material in the case of deficiency. SOLUTION: When a conveyor start-up signal is transmitted from a master control part 109 through a communication device 108 and received by a CPU 100, a cheese sensor 103 judges whether a prescribed amount of the food material is present in a storage transfer apparatus or not. When the amount is deficient, a supplementing part 105 is actuated for a prescribed period by an output device 102 and a supplement driver 104 and the part is stopped after supplementing the food material. When a signal to start the transfer motion is transmitted from the master control part 109, the CPU 100 operates a delivery part for a prescribed period through the output part 102 and a delivery driver 106 to supply the food material to tacos. The operations are repeated to surely operate the apparatus while limiting the supplement of the food material exclusively at the start up of the conveyor.
Patent JP-S5973333-A (JP)
Title: Light controller for car
Inventor: ITOU TAKESHI
IPC: B60Q1/02
Filed: 1982-10-18
Abstract: PURPOSE:To permit brightness judging function to be maintained even the output of a car-speed sensor becomes zero, by switching sampling for the data of brightness outside a car which are obtained by the car-speed sensor to sampling in a certain time intervals, when anomaly is generated in a car-speed sensor system. CONSTITUTION:A light controller 11 equipped with a microcomputer AD-converts the outside-car brightness level obtained by an optical sensor 1 by the aid of an interruption signal in the form of a train of pulses transmitted from a car- speed sensor 14 and compares the obtained value with the data of threshold value stored in a memory 13 through subtraction, and transmits a brightness judging signal into a driving circuit 4, and automatic lighting-up and -out is permitted. A deceleration rate is obtained from the difference in the pulse cycle in a train of car-speed pulses, and when said value exceeds the max. deceleration rate, generation of anomaly in the car-speed sensor system is judged, and interruption processing is performed with signals in a certain time intervals by a timer 16, and thus brightness is judged. Therefore, even if a car-speed signal is suspended, brightness judgement for the brightness outside a car can be continued, and safety is secured.
Patent JP-S6339524-A (JP)
Inventor: MINAKI HIDEO
IPC: A01K5/00
Filed: 1986-08-05
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5884919-A (JP)
Title: Slag cutting method during tapping from converter
Inventor: YAMAGUCHI SUSUMU
IPC: C21C5/46
Filed: 1981-11-13
Abstract: PURPOSE:To execute slag cutting rationally and surely by changing over flow passages for tapping in accordance with the detection of the outflow of slag at the end period of tapping from a converter. CONSTITUTION:A slag pan 2 is placed on a carriage 1 near a ladle A installed thereon, and a spout 3 which serves as a flow passage for slag is installed and supported between both. While the operator observes the tapping flow through the tap hole of a converter B, the operator moves the carriage 1 slightly toward the right to change the flow passage for tapping to the spout 3 when the outflow of slag (a) is detected. Thus the slag flowing out since that time is run into the pan 2 through the spout 3.
Patent JP-H0348310-A (JP)
Title: Temperature controller for hot water feeder or the like
Inventor: NARUSE SHIGEO
IPC: F24H1/10
Filed: 1989-07-14
Abstract: PURPOSE:To stabilize hot water discharging temperature by calculating a flow rate value based upon a value obtained by averaging period information indicating the intervals of signals outputted from a flow rate sensor. CONSTITUTION:A data processing part 41 stabilizes hot water discharging temperature by executing period measuring, period information storing,average period calculating, a flow rate calculating, and flow rate recognizing processing in the processing of a pulse signal outputted from a flow rate sensor 33. An interval between pulse-like signals generated from the sensor 33 is measured in each generation and successively stored as period information. The average value of the stored period information is calculated and a flow rate is calculated based upon the average period information to determine a heating variable. Even when a flow rate is low, stable hot water discharging temperature can be obtained.
Patent JP-H0529352-A (JP)
Title: Method of forming gate electrode for field effect transistor
Inventor: TSUJI TSUTOMU
IPC: H01L29/872
Filed: 1991-07-24
Abstract: PURPOSE:To reduce gate wiring resistance by eliminating cavities in the gate electrode of a Schottky junction type which is formed by a self-alignment method. CONSTITUTION:On an n-type GaAs crystal layer 2, there is formed a first metallic film 5 which has a high melting point, is resistant to heat, and forms a Schottky junction with the GaAs by a self-alignment method using as a mask the silicon oxide film 3 which has an opening in a gate formation area. A second metallic film 6 of a low fusion point is formed. After the formation of a gate electrode, an electron beam 8 is selectively applied by scanning to the surface of the second metallic film 6 in order to form the second metallic film 6, and at the same time cavities 7 are made to disappear.
Patent JP-H1174283-A (JP)
Title: High speed-bipolar transistor and manufacture thereof
Inventor: BOKU KOKYOKU
IPC: H01L29/73
Filed: 1998-06-29
Abstract: PROBLEM TO BE SOLVED: To increase the speed of an element by reducing the region of a collector by providing a salicide layer, formed on the external base region on the lower part of a trench, and a first conductivity-type conductive layer which is connected to a second conductivity-type impurity region on the side face of the trench. SOLUTION: An N-type junction impurity region 34a is formed in a P-type impurity region 33 by diffusing N-type impurities into suitable depth from a polysilicon layer 34 by performing a prescribed heat treatment. Then, after the formation of an insulating film 27 by depositing the prescribed CVD film thereon and by planarizing it by performing the prescribed reflowing process, a contact hole which reaches an insulating film 27, a dielectric layer 20, a CVD oxide film 26, a heavily-doped collector region 30, a polysilicon layer 24 and a silicide layer 32a respectively by performing a photographic and etching treatment. Furthermore, after the vapor-deposition of Al and W, etc., thereon, a collector electrode, etc., is formed by performing photographic and etch treatments and by patterning.
Patent JP-H0346564-A (JP)
Title: Immunoassay and immune sensor
Inventor: TAKAHASHI KEIKO
IPC: G01N21/64
Filed: 1989-07-14
Abstract: PURPOSE:To rapidly and easily measure the trace amt. of the material in an aq. soln. by transmitting stimulating light and output light through an optical fiber in the case of immersing a reaction phase into a soln. to be detected and measuring a change in fluorescent characteristics. CONSTITUTION:The material to be detected is detected by putting the reaction phase 3 to the outside of a measuring instrument 1, connecting the instrument 1 and the reaction phase 3 by an optical fiber 2 and transmitting the stimulating light and the output light. This reaction phase 3 is held covered with a semipermeable membrane which allows the transmission of the material to be detected but does not allow the transmission of antibodies. The material to be detected in the soln. to be detected passes the semipermeable membrane and enters the reaction phase 3 when the reaction phase 3 is directly immersed into the soln. to be detected. The fluorescent intensity is changed by the conjugation of this material with the antibodies in the reaction phase 3 and the concn. of the material to be detected in the soln. to be detected is thus measured.
Patent JP-S6339017-A (JP)
Title: Keyboard device
Inventor: FUKUDA TAKUZO
IPC: G06F3/02
Filed: 1986-08-04
Abstract: PURPOSE:To attain the collective conversion of a character keys just with the second push of a shift key even in case a character key is pushed in a wrong shift mode, by storing temporarily the symbols for each shift of plural character keys pushed in the same shift mode in the form of a table of characters corresponding to shift codes. CONSTITUTION:Either one of shift keys 10-13 is selected and character keys are successively pushed. Then the character of the selected shift key and the characters of other shift keys are all read out of an interface part 5 and then written to a shift/character memory part 7. While the characters corresponding to those shift keys which are pushed at a time are displayed on output device 8. if the displayed character is not equal to a desired one owing to the push of a wrong shift key, the desired shift key is pushed again. Thus both character and shift does corresponding to the shift key pushed later are read out of the part 7 and applied to the part 5.
Patent JP-S6159599-A (JP)
Inventor: NAKAO OSAMU
IPC: H03K3/42
Filed: 1984-08-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6341683-A (JP)
Title: Reed valve device of compressor
Inventor: IKEDA HISAO
IPC: F04B39/10
Filed: 1986-08-06
Abstract: PURPOSE:To prevent excessive compression by either forming an inclined face inclined in a width direction perpendicular to the longitudinal direction of a valve body on the retaining face of a valve retainer or varying the board thickness of said valve body in the width direction, and differentiating the timing for a reed valve body to be brought into contact with and separated from a valve seat in the width direction. CONSTITUTION:The retaining face 17a of a valve retainer 17 is formed into a projecting curved face having a uniform radius R along the longitudinal direction. And, the part except a part 17a1 which fixedly holds a valve body 16 is inclined along a width direction. Thereby, the contacting positions of the valve body 16 to the retaining face 17a are differentiated in the width direction, differentiating the bending stress of the passage opening/closing part 16b of the valve body 16 in the width direction. Therefore, since the separating timing of the valve body 16 from a valve seat 14 at the time of valve opening is different in the width direction, the valve body 16 can be opened without the need of excessive pressure, thereby, preventing the generation of excessive compression. Also, a similar effect can be obtained by varying the board thickness of the valve body 16 itself in the width direction.
Patent JP-S5884828-A (JP)
Title: Molded antistatic high polymeric resin article
Inventor: ASAI MICHIHIKO
IPC: B32B27/00
Filed: 1981-11-16
Abstract: PURPOSE:The titled molded article, prepared by forming a thin film with specific contents of silicon atoms and oxygen atoms on the surface of a molded high polymeric resin article by using a compound containing silicon atoms, and having improved antistatic properties with improved durability. CONSTITUTION:A polymerized film is formed on the surface of a molded article 1 consisting of a high polymeric resin, e.g. polyethylene (PE), polypropylene (PP) or polystyrene (PS), by the low-temperature plasmatic treatment, etc. of a compound containing silicon atoms, e.g. various silane compounds or gasifiable low-molecular weight siloxane compound, or the compound containing the silicon atoms is applied to the surface and if necessary irradited with a ctinic rasy, etc. to form a modified thin film 2 with 1-60atm% silicon atom and 7atm% or more oxygen atom contents higher than those in the surface of the untreted molded  article measured by the elementary analysis according to the electron spectroscopy and preferably <=2mum thickness and give the amined molded article.
Patent JP-H0346315-A (JP)
Title: Manufacture of semiconductor substrate
Inventor: MIYAJIMA MOTOMORI
IPC: H01L27/12
Filed: 1989-07-14
Abstract: PURPOSE:To make a thickness of an Si layer uniform and to enhance a production yield by a method wherein a process which substantially uses a 111 plane as a treatment face is provided when the surface of a wafer is treated by an anisotropic etching operation after two Si wafers one of which uses the 111 plane as a main face and which are composed of single-crystal Si have been pasted and after a thickness of the wafers has been reduced by a machining operation. CONSTITUTION:Two Si wafers 1, 2 at least one of which uses a 111 plane as a main face and which are composed of single-crystal Si are bonded via an oxide film 3; a thickness (d) of the Si wafer of the 111 plane is reduced by a treatment method including a machining means; after that, the surface of the wafer whose thickness (d) has been reduced is treated by an anisotropic etching operation which depends on a crystal orientation. During this process, it is arranged to include a process which uses the 111 plane as a treatment face. Thereby, a thickness of an element formation layer 1' can be made uniform, and a production yield of an SOI-type integrated circuit substrate is enhanced sharply.