baber/WOPTO huggingface dataset:
Patent TW-490768-B (TW)
Title: Method for forming tungsten wirings
Inventor: HWANG SUNG-BO
IPC: H01L21/768
Filed: 1996-06-07
Granted: 2002-06-11
Abstract: A method for forming a tungsten wiring, wherein an etch barrier layer is formed on an area where a metal wiring will be formed, using chlorine-based plasma so that the etch barrier layer is used as a mask upon forming a metal wiring, thereby eliminating a limitation on the thickness of the tungsten junction layer, ithe method includes the steps of sequentially forming a tungsten junction layer and a tungsten film over a semiconductor substrate, forming a negative type photoresist film pattern using a metal wiring mask, forming a copper thin film on a selectively exposed portion of the tungsten film, growing the copper thin film in a chlorine-based plasma atmosphere, thereby forming a copper chloride thin film, removing the photoresist film pattern, sequentially etching the tungsten film and tungsten junction layer using the copper chloride thin film as a mask, and removing the copper chloride thin film, thereby forming a tungsten wiring. The method provides a sufficient process margin, thereby achieving an improvement in the reliability of semiconductor devices and a high integration of semiconductor devices.
Patent TW-330953-B (TW)
Title: Device for preventing slanted sewing of a sewing machine
Inventor: HORIESEIJI
IPC: D05B35/00
Filed: 1996-07-12
Granted: 1998-05-01
Abstract: A device for preventing slanted sewing of a sewing machine, which is characterized in that the needle board formed by the needle hole where the sewing needle of the sewing machine goes through and the moving direction of the sewing object are in front of and above both sides of the needle hole, the tooth-feeding place on the needle board and the press sheet metal of the sewing object during sewing are located on its front end and are equipped with a press cloth formed above the needle hole on the device for preventing slanted sewing of the sewing object, during the tooth-feeding operation, the tooth-feeding located straight in front of the needle hole in the advancing direction is installed to be higher than the other tooth-feeding, meanwhile a nose is installed at a location straight behind the needle hole in the moving direction of the needle board to constitute the device for preventing slanted sewing of a sewing machine.
Patent TW-520289-B (TW)
Title: Anti-selectin antibodies for prevention of multiple organ failure after polytrauma and for prevention of acute organ damage after extracorporeal blood circulation
Inventor: CO MAN SUNG
IPC: A61K39/395
Filed: 1996-10-21
Granted: 2003-02-11
Abstract: Anti-selectin antibodies are used for reducing probability of incidence of polytraumatic events, such as organ failure. A pharmaceutical composition for treating polytraumatic event, comprising a therapeutically effective amount of an anti-selectin antibody in combination with a pharmaceutically acceptable carrier.
Patent TW-381387-B (TW)
Title: Tame automorphism public key system
Inventor: MOH TZUONG-TSIENG
IPC: H04L9/28
Filed: 1996-12-14
Granted: 2000-02-01
Abstract: Having K as a field having 2exp(m) elements. Having phi4, phi3, phi2, phi1 as the tame automorphism of affining space Kexp(n). Having its combination as pi=phi(4)phi(3)phi(2)phi(1). The automorphism pi and its resolvent pi = phi(4)phi(3)phi(2)phi(1) is unknown. If pi = (pi(1)(x1,íK,xn+r)íK,pi(n+r)(x1,íK,xn+r)) would have the field K and the polynomial (f1,íK,fn+r)=(pi(1)(x1,íK,xn0,íK,0)..) pi(n+r)(x1,íK,xn0,íK,0)) be known to all. If (x'1,íKx'n,0,íK,0) as paintext and cyphertext would be (y'1,íK,y'n+r)=(f1(x'1,íK,x'n)íK,fn+r(x'1,íKx'n)) to find easily phi(i)exp(-1)(y'1,íK,y'n+r). It would be easy to get the plaintext from cyphertext (x'1,íK,x'n)=phi(1)exp(-1)phi(2)exp(-1)phi(3)exp(-1)phi(4)exp(-1) pi(x'1,íKx'n). Though, without knowing automorphism pi and its resolvent pi=phi(4)phi(3)phi(2)phi(1) but very difficult to find the plaintext (x'1,...,x'n). The cipher system or method can be used for transmission of electric message, data storage and security system of Smart card and product verification.
Patent TW-328167-B (TW)
Title: Method for manufacturing lead frame
Inventor: OZAWA KENJI
IPC: H01L21/48
Filed: 1997-01-24
Granted: 1998-03-11
Abstract: A method for manufacturing lead frame consisting of fine leads connected to the electrodes of the chip and having the structure of two or multiple layers includes the following characteristics a. forming a pattern layer as the mask for the process of metallic coating on a substrate b. sequentially coating two or more metal material on the sidewall surface of the substrate formed by the pattern layer, while using the pattern layer as the mask.
Patent TW-335560-B (TW)
Title: Symmetric transverse resistor of polysilicon TFT
Inventor: Lin gang-zheng
IPC: H01L21/336
Filed: 1997-01-27
Granted: 1998-07-01
Abstract: To add in 2 sub-gate beside the main gate by metal or polysilicon. One of them closes to the drain, the other close to source. The polysilicon is used as resistor without any doping. When polysilicon thin film transistor is off, the depletion electric field and leakage are small.
Patent TW-359001-B (TW)
Title: Method for forming semiconductor shallow slot insulation regions
Inventor: JU JR-SHIUN
IPC: H01L21/76
Filed: 1997-04-29
Granted: 1999-05-21
Abstract: Method for forming semiconductor shallow slot insulation regions on silicon semiconductor wafers, having the silicon wafers P well and N well, including at least the following: forming a padded layer on the wafer; forming a silicon oxide layer on the padded layer; forming a slot in the silicon nitride layer, the padded layer and the wafer; forming the first sacrifice oxide layer on the surface of the slot and the padded layer; removal of the first sacrifice oxide layer from the P well; forming silicon boron glass layer on the surface of the slot, formed the silicon boron glass on the padded layer, the silicon nitride layer and the first sacrifice oxide layer; thermal treatment for diffusion of the boron ion in the silicon boron glass into the P well, for forming channel insulation layer in the P well; removal of the silicon boron glass layer; removal of the first sacrifice oxide layer; forming the oxide layer on the surface of the slot, the padded layer; forming selectively by liquid deposition LPD-oxide layer in the slot; flattening the LPD-oxide layer by chemical mechanical grinding to tHe surface of the silicon nitride layer; removal of the silicon nitride layer; and removal of the padded layer.
Patent TW-349301-B (TW)
Title: Methods for generating side information in the presence of time-selective fading
Inventor: HASSAN AMER A
IPC: H04B7/24
Filed: 1997-06-20
Granted: 1999-01-01
Abstract: A method of generating a reliability information index indicating the reliability of data transmitted on a TDMA communication channel, which comprises the following steps: transmitting one or more sequence testing bits on each time slot of the TDMA communication channel, the testing bit(s) being known by a receiver prior to the transmitting step; on the receiver, determining a mathematical distance between the testing bit sequence known to the receiver and the testing bit sequence received by the receiver; and on the receiver, generating a reliability information index of the reliability of transmitting data on the TDMA communication channel based on the mathematical distance, and transmitting an information estimation value of the transmitted data.
Patent TW-432835-B (TW)
Title: Method and apparatus for accelerated response to a resource allocation request in dispatch system
Inventor: LEVKEN ERIC J
IPC: H04W72/04
Filed: 1997-07-10
Granted: 2001-05-01
Abstract: In a push-to-talk dispatch system, a method and apparatus for providing an accelerated response to a push-to-talk origination message. A first base station allocates a first set of equipment to support a push-to-talk connection. A first system controller allocates a second set of equipment to support the push-to-talk connection. Upon receipt of a push-to-talk origination message from a first remote unit, the first base station transmits an immediate response to the first remote unit, instructing it to communicate through the first set of equipment and the second set of allocated equipment.
Patent TW-322608-B (TW)
Title: Manufacturing method of self-aligned salicide
Inventor: LIN JIANN-TYNG
IPC: H01L29/49
Filed: 1997-07-31
Granted: 1997-12-11
Abstract: A manufacturing method of self-aligned salicide comprises of the following steps: (1) supplying one silicon substrate with formed shallow trench isolation and one gate oxide, in which the sahallow trench siolation defines one active area; (2) forming one polysilicon to cover the gate oxide; (3) forming one first TiN layer to cover the polysilicon; (4) forming one TiSi2 layer on the first TiN layer and one second TiN layer on the TiSi2 layer; (5) forming one SiN layer to cover the second TiN layer; (6) patterning the polysilicon, first TiN layer, TiSi2 layer, second TiN layer and SiN to form one stack gate electrode for exposing the silicon substrate of the active area; (7) forming one spacer around the gate electrode; (8) depositing one Ti layer to cover the spacer and the exposed silicon substrate; (9) by thermal process making the Ti layer react with the silicon substrate to form one self-aligned salicide; (10) by wet etch removing the Ti layer where does react with the silicon substrate.
Patent TW-385458-B (TW)
Title: Keyboard unit and keystroke switch
Inventor: NOZAWA YUICHIRO
IPC: H01H13/70
Filed: 1997-08-12
Granted: 2000-03-21
Abstract: This invention provides a keyboard unit comprising a bottom plate and plural keystroke switches arranged onto the bottom plate. Each keystroke switch comprises a electricity switch, a elastic dome part for covering electric contact which is formed on the bottom plate, a bearing part located on the bottom plate, a key cap with a supporting axis to connect the bearing part, and a connecting part connected to part. When key cap is pressed down, part generates elastic deformation, inner surface of the part is then closely pressed onto the electric contact, and when key cap is not pressed, the deformation of so that the inner surface of part is separated from electric contact, and key cap is pushed up by the part.
Patent TW-377405-B (TW)
Title: Locking peripheral port cover for preventing accidental detachment of a peripheral device from a computer system
Inventor: CHOI PHIL-KYU
IPC: G06F1/00
Filed: 1997-09-04
Granted: 1999-12-21
Abstract: This invention relates to a peripheral port cover that interlocks a peripheral port, preventing it from being accidentally opened by the movement of a peripheral device. It is capable of preventing accidental separation of peripheral devices from the computer and the corresponding data and power losses that might occur. This locking peripheral port cover employs a simple design that is economical and easy to manufacture.
Patent TW-338719-B (TW)
Title: A disposable diaper pant
Inventor: OTSUBO TOSHIFUMI
IPC: A61F5/44
Filed: 1997-09-23
Granted: 1998-08-21
Abstract: A disposable diaper pant having a surface film in touch with the skin, and the back film in contact with the clothes and the absorbent core positioned between said films, featuring: at least a part of said back film formed by the elastic film forming the inner side of the back film facing the inside of the horizontal widthwide direction of the diaper pant and the non-elastic non-woven fabric forming the outside of said back layer overlapping said elastic film, being both said elastic film and the non-elastic non-woven fabric positioned intermittently on a number of fixation points with said elastic films extending toward said widthwide direction and when said elastic film shrinking from said extended state, by means of said elastic film in plurality and adjacent number of fixation points and the non-elastic non-woven fabric making said non-elastic non-woven fabric extend from said elastic film for plaits.
Patent TW-448151-B (TW)
Title: Process for dehydrogenation of ethylbenzene to styrene
Inventor: BUTLER JAMES R
IPC: C07B61/00
Filed: 1997-11-10
Granted: 2001-08-01
Abstract: The present invention discloses a method and apparatus for dehydrogenating ethylbenzene into styrene which method and apparatus eliminate the need for multiple reactors and preheaters by providing a single compact reactor which utilizes the principle of ascending-heat thermal reactor by having an internal heat source such as gas heaters or electric elements.
Patent TW-353194-B (TW)
Title: Coated deposition chamber equipment
Inventor: DING PEIJUN
IPC: C23C14/56
Filed: 1997-11-25
Granted: 1999-02-21
Abstract: A device for use in depositing layers during semiconductor fabrication, comprising: a device surface, having a first thermal coefficient of expansion; and a coating on a portion of the device surface; the coating having a second thermal coefficient of expansion; and the coating being sufficiently porous to compensate for mismatch between the first thermal coefficient of expansion and the second thermal coefficient of expansion which will occur as the temperature thereof changes.
Patent TW-494021-B (TW)
Title: Method for removing oil mist from electrostatic oil mist collector and device therefore
Inventor: HUANG MEI-LING
IPC: B03C3/74
Filed: 1997-12-02
Granted: 2002-07-11
Abstract: The present invention relates to a method for removing oil mist from an electrostatic oil mist collector and a device therefore. The method comprises a step of introducing hot air and steam into an oil mist collection duct at the same time or a different time so that the oil mist absorbed on the surface of the electrostatic plate is melted by heat and dripped down, while the steam promotes the oil mist on the electrostatic plate. The above procedure is repeated such that no need to dismantle the oil mist collection duct or install a scraper while ensuring the cleaning of the electrostatic plate. Meanwhile, the hot air can effectively reduce the drying time of the electrostatic plate to reduce the waiting time and increase the efficiency, while reducing the possibility of damaging the electrostatic plate due to cleaning.
Patent TW-346552-B (TW)
Title: High efficiency polarization light source device for a liquid crystal projection system
Inventor: HWANG JIUNN-JYE
IPC: G03B21/14
Filed: 1997-12-03
Granted: 1998-12-01
Abstract: A high efficiency polarization light source device for a liquid crystal projection system, which comprises: a light bulb for providing a light source required by the system; a mirror for reflecting the back light of the light bulb so that the light emitted by the light bulb can advance in a same direction; a polarization device disposed on the other side of the light bulb opposite to the mirror for dividing an un-polarized light beam into a P polarized light and an S polarized light; a light distribution plate mounted on the advancing path of the P polarized light and the S polarized light so that the P polarized light and the S polarized light separately form a plurality of small light spots; a half-wave plate array formed by arranging a plurality of half-wave plates in intervals opposite to the polarization device and mounted on the other side of the light distribution plate for selectively passing the light spots of the P polarized light and an S polarized light thereby converting the P polarized light into the S polarized light or converting the S polarized light into the P polarized light; and an integration plate disposed on the other side of the half-wave plate array opposite to the light distribution plate for overlapping a plurality of light spots, and enlarging the cross sectional area thereof for forming a unidirectional polarization light beam which is converged on a liquid crystal panel through a focusing lens.
Patent TW-392369-B (TW)
Title: Manufacturing method for high polymer light emitting diode capable of emitting nearly white light broadband spectrum
Inventor: CHEN SHOU-AN
IPC: H01L33/00
Filed: 1998-03-11
Granted: 2000-06-01
Abstract: The present invention discloses a high polymer light emitting diode capable of emitting nearly white light broadband spectrum, which comprises: a transparent electrode (anode), a metal electrode (cathode), an organic light emitting layer, and an additive electric hole transmitting layer and/or electron transmitting layer, wherein the organic light emitting layer comprises the adulterant composed of the copolymer of poly(phenylene vinylene), PPV, capable of emitting blue-green light and the derivative with PPV alkoxyl substitute capable of emitting red light that the emitted light color is almost the yellow-white light of sunlight with appropriate ratio between the two. The electric-excited spectrum is broad and covers the visible light range and will not be changed by increasing the voltage. Furthermore, by adding a layer of electric hole transmitting layer and a layer of electron transmitting layer, the initial voltage of device is reduced and the light emitting efficiency is increased. In addition, the present invention also discloses the preparation method for the high polymer light emitting diode which includes: melting said two kinds of light-emitting conjugate high polymer in organic solvent and mixing the blue-light-emitting high polymer with red-light-emitting high polymer in a weight ratio of 150:1~10:1 to become an uniform solution; then, spraying the solution on electrode substrate (as anode) and achieving an uniform film after dehydration; and dipping another electrode (as cathode) in a highly vacuum environment.
Patent TW-389806-B (TW)
Title: Method of electromagnetically fabricating functional fabrics
Inventor: CHEN HUNG-EN
IPC: D02J1/20
Filed: 1998-03-13
Granted: 2000-05-11
Abstract: A method of electromagnetically fabricating functional fabrics uses electromagnetic anchoring method to directly combine material or powder having specified function into various fabrics structure. Firstly, high voltage current is conducted to electrodes for generating electromagnetic field. When the electromagnetic field is created, the material or powder is subject to electromagnetic force to move in a predetermined direction between the electrodes. Secondly, the fabrics coated with the material or power is introduced or installed in the electromagnetic field so that the material or powder is then adhered on the fabrics due to the electromagnetic force. Afterwards, a thermal process is used to cure the adhesive agent on the fabrics such that the material or powder can be adhered on the fabrics.  Such functional material or powder represents, in particular, metal, ceramic, active carbon or high molecule, etc., and composite fabrics can be also converted to a fiber material, net organization, surface or curve structure or synthetic cloth and so on.
Patent TW-346419-B (TW)
Title: Process for recycling collected dust in an arc furnace stainless steel factory
Inventor: CHERN SHWU-YEA
IPC: C21C5/52
Filed: 1998-04-04
Granted: 1998-12-01
Abstract: A process for recycling collected dust in an arc furnace stainless steel factory, which comprises: (a) mixing the collected dust with water to form a slurry; (b) feeding the slurry into a flotation tank, adding a capturing agent; (c) continuously mixing the mixture while introducing air in thereby generating a large quantity of air bubbles; (d) filtering the floating mineral and the precipitated mineral thereby obtaining a refined mineral and a tail mineral; (e) feeding the refined mineral into a dissolution tank and adding water into the tank, slowly adding hydrochloric acid into the tank adjusting the pH of the mixture to 0~1, while heating the mixture to 70℃~80℃, adding a small quantity of hydrogen peroxide, after through reactions carrying out a vacuum filtration separation thereby obtaining two matters: one being a mixture solution of zinc chloride, and the other being a non acid soluble chromite refined mineral; (f) feeding the chromite refined mineral into a mixing tank, washing the mineral with water, followed by a dehydration treatment, until the pH of the mixture reaching 5~6 drying the mixture into a chromite refined mineral; (g) feeding the zinc chloride mixture solution into a dissolution tank, while under mixing heating the solution to 70℃~80℃, adding a small quantity of hydrogen peroxide, after through reactions adjusting the pH of the solution to 5.0 by using a pure alkali, carrying out a vacuum filtration separation thereby obtaining two matters: one being a mother liquid of zinc chloride, and the other being a mixture residue of ferric oxide; (h) feeding the mother liquid of zinc chloride into a dissolution tank, while under mixing adding a zinc powder, heating the mixture to 80℃~100℃, after reacting for about one hour, carrying out a vacuum filtration separation thereby obtaining two matters: one being a mother liquid of zinc chloride, and the other being a mixture residue of nickel; (I) feeding the mother liquid of zinc chloride into a dissolution tank, while under mixing slowly adding a pure alkali to adjust the pH of the mixture to 7.5~8, carrying out a vacuum filtration separation thereby obtaining two matters: one being a zinc carbonate residue, and the other being an aqueous solution of sodium chloride; (j) washing the zinc carbonate residue with water to remove the chlorine ions, after dehydration mixing the mixture with sulfuric acid to dissolve the mixture, after cooling the crystals formed being ZnSO4.7H2O, or converting the ZnSO4.7H2O into ZnSO4.1H2O by high temperature vacuum concentrating.
Patent TW-396375-B (TW)
Title: Semiconductor device with memory transistor
Inventor: GOTO MITSUHIKO
IPC: H03F3/72
Filed: 1998-05-01
Granted: 2000-07-01
Abstract: A semiconductor device includes a differential amplifier, a current mirror circuit and a control current supply circuit. The amplifier has a first and a second transistor forming an input differential pair, the first transistor having a first gate and a first and a second impurity diffusion layer, the second transistor having a second gate and a third and a fourth impurity diffusion layer. The current mirror circuit has a third and a fourth transistor, the third transistor having a third gate and a fifth and a sixth impurity diffusion layer, the fourth transistor having a fourth gate and a seventh and an eighth impurity diffusion layer. The control current supply circuit has a non-volatile memory transistor having a control gate, a charge accumulating layer and a ninth and a tenth impurity diffusion layer. The first and the fifth impurity diffusion layers and the third and the fourth gates are connected to each other via a first wiring layer. The third and the seventh impurity diffusion layers are connected to each other via a second layer. The sixth and the eighth impurity diffusion layers are connected to a first constant voltage supply via a third wiring layer. And, the second and the fourth impurity diffusion layers are connected to a second constant voltage supply via at least a fourth wiring layer, the first control current supply circuit and a fifth wiring layer.