baber/WOPTO huggingface dataset:
Patent JP-H0634438-A (JP)
Title: High-resolution spectroscope
Inventor: IWATA TETSUO
IPC: G01J3/26
Filed: 1992-07-17
Abstract: PURPOSE:To obtain a high-resolution spectroscope which has a wide measure ment region, is simple, and can be controlled easily. CONSTITUTION:A polychrometer 9 is laid out at the irradiation side of a Fabry- perot interferometer 5 and a multi-channel detector 10 is provided at the irradiation side of the polychrometer. Then, it is adjusted so that the free spectrum region of the Fabry-perot interferometer is equal to the wavenumber width of one element of the multi-channel detector. In this state, the free spectrum region is divided into n parts, spectrum data for n times which are obtained by measurement for each are stored temporarily in a memory 14, all spectrum data are sent to an operation part 15 when the measurement for n times is completed, and they are synthesized there and outputted.
Patent JP-H0554990-A (JP)
Title: Electric discharge lamp lighting device
Inventor: KAMIYA TAKAYUKI
IPC: H05B41/24
Filed: 1991-08-26
Abstract: PURPOSE:To light up a discharge lamp stably with rectangular current of low frequency despite the small size of a choke coil set in series to the discharge lamp by utilizing the current limiting function of a DC power supply. CONSTITUTION:A discharge lamp 16 is lighted up steadily with low frequency rectangular waves while a DC power supply circuit 18 is furnished with current limiting function. The output voltage of this DC power supply circuit 18 is raised over the re-arcing voltage of the discharge lamp 16 through utilization of the energy accumulated in choke coils 6, 15 in the period when all switching elements are turned off in a full-bridge inverter circuit 19, which is connected with the output terminal of the DC power supply circuit 18, and thereby stable lighting is attained. At the time of starting, the output current limit value for the DC power supply circuit 18 is raised, and the lighting frequency is heightened compared with at time of steady operation, and thereby a large current is allowed to flow in the discharge lamp 16 while current is restricted by the choke coil 15, so as to quicken the optical rise.
Patent JP-H0760844-A (JP)
Title: Manufacture of three-dimensional structure
Inventor: YOKOHAMA MASAKI
IPC: B29C67/00
Filed: 1993-08-27
Abstract: PURPOSE:To obtain a three-dimensional structure containing a relatively movable resin material and a ceramic material and having high accuracy by providing the steps of molding an optically curable fluidized resin, curing a sacrificial layer of optically curable resin containing a sacrificial layer component or made of the component, and removing the layer. CONSTITUTION:A optically curable fluidized resin 24 is contained in an optically curable fluidized resin tank 21, and formed with an ultraviolet beam 23 from below a glass plate 22. Then, a table 31 is moved by a vertical actuator 32 and a horizontal actuator 33, filled in a cleaning tank 26 filled with cleanser 25, and cleaned by an ultrasonic generator 40. Thereafter, after an ultraviolet ray source 28 is disposed, the table 31 is introduced into an exposure tank 27, and the cured optically curable fluidized resin 34 is completely cured by the ultraviolet beam. Further, an optically curable fluidized resin 30 of a sacrificial layer component is contained in an optically curable fluidized resin tank 29, the table 31 is moved thereto, and a sacrificial layer is optically formed at a resin molded form. Then, after it is cleaned with the tank 26, it is applied by an ultrasonic vibration and only the sacrificial layer component is dissolved.
Patent JP-2000042699-A (JP)
Title: Mold for electromagnetic field casting
Inventor: NAKADA HITOSHI
IPC: B22D11/11
Filed: 1998-07-28
Abstract: PROBLEM TO BE SOLVED: To prevent degradation of the penetration efficiency of the high frequency magnetic field into a mold by forming a notched part wider than a slit on an arbitrary position of an upper end part and/or a lower end part in an area in the circumferential direction including the longitudinal slit forming height. SOLUTION: In a mold having a plurality of regular slits 15 of 145 mm in slit and 0.3 mm in width formed around a slit forming part, a notch 16a is formed in an upper part of the slits 15, a notch 16b is formed in a lower part of the slits 15, or notches 16a, 16b are formed in both the upper part and the lower part of the slits 15. In each case, the width W1, W2 of the notches are 5 mm, and the lengths L1, L2 are 15 mm, respectively. The magnetic flux density inside the mold when the magnetic field of a specified frequency is applied, is approximately 1.5 times in a case of only the notch 16a, approximately 1.67 times in a case of only the notch 16b, or approximately 2.2 times in a case of both notches 16a, 16b as compared with the case that regular slits are used.
Patent JP-H0962881-A (JP)
Title: On-vehicle responder
Inventor: INOUE YASUSHI
IPC: G07B15/00
Filed: 1995-08-22
Abstract: PROBLEM TO BE SOLVED: To provide an on-vehicle responder which can previously prevent that various charges on a vehicle are improperly adjusted by means of replacing the responder to the other vehicle. SOLUTION: The on-vehicle responder is installed in a vehicle and it transmits an information signal for deciding the adjustment sum of the various charges on the vehicle to the external part of the vehicle in response to a question from outside the vehicle. A removal detection means A detecting removal from inside the vehicle and an information signal transmission inhibition means 39A inhibiting the transmission of the information signal to the outside of the vehicle based on a detected result by the removal detection means A are provided. When removal from inside the vehicle by the removal detection means A is detected, the information signal transmission inhibition means 39A inhibits the transmission of the information signal to the external part of the vehicle.
Patent JP-H0959014-A (JP)
Title: Hygroscopic silica particle and its production
Inventor: SHIYOJI MAKOTO
IPC: B01J20/10
Filed: 1995-08-22
Abstract: PROBLEM TO BE SOLVED: To stably obtain silica particles far excellent in moisture absorption by specifying an apparent density and a bulk density of the silica particles obtained by a sol-gel method. SOLUTION: This silica particle has 1.70-0.80g/cm<3> apparent density, 0.70-0.80g/cm<3> bulk density and >=10% coefficient of moisture absorption. Though the characteristic values are not specifically limited except the apparent density and the bulk density, e.g. the average particle size is preferably 0.1-3μm. The production method of silica particles is to add an alkoxysilane to an aqueous alkaline solution and obtain a water dispersion of silica particles through hydrolysis and condensation. It is preferable to obtain silica particles having large particle sizes of >=1μm by dispersing seed particles in the aqueous alkali solution in advance. The obtained aqueous dispersion of the silica particles is condensed preferably by giving a mechanical mixing force. Further, nonreacted alkoxysilane is hydrolyzed by adding water to the concentrated system.  Then, the concentrate is dried and baked to obtain the objective silica particles.
Patent JP-H0961270-A (JP)
Title: Semiconductor pressure sensor
Inventor: HATTORI YASUNORI
IPC: H01L29/84
Filed: 1995-08-22
Abstract: PROBLEM TO BE SOLVED: To provide a stable semiconductor sensor with drift and hysteresis in a sensor signal caused by a change in pressure and temperature eliminated and also to improve reliability with pressure highly accurately detected. SOLUTION: An SiO layer 24, an SiN layer 25, a PSG layer 26 and a polysilicon layer 27 are formed on a semiconductor substrate 20 and respective distortion sensors 22, 23 with such thickness that mutual residual stress is canceled among the layers.
Patent JP-H0631103-A (JP)
Title: Vacuum distillation method of combustible solvent for work washing and vacuum distillation apparatus
Inventor: OKAMURA SAICHI
IPC: B01D3/10
Filed: 1992-07-18
Abstract: PURPOSE:To provide a vacuum distillation method and vacuum distillation apparatus appropriate for the distillation and regeneration of combustible solvent after work washing. CONSTITUTION:In a vacuum distillation apparatus, a trochoid pump 18 or liquid ring vacuum pump as a vacuum pump is provided and further a vacuum gage with a contact 10 for detecting a distillation end point and a distillation residue cooling tank 23 for cooling a distillation residue are provided. A safe and efficient vacuum distillation method for recovering waste work-washing liquid contg. combustible solvent by using the vacuum distillation apparatus is provided.
Patent JP-S6457348-A (JP)
Title: Simultaneous access control system
Inventor: NAKATSUKA TAKENOBU
IPC: G06F12/00
Filed: 1987-08-27
Abstract: PURPOSE:To shorten the queuing time of an other user process by changing the output request state of a registered block into an input request state at the time of receiving DML end information generated from the user process. CONSTITUTION:The user process 10 informs the sort of an input or output request to a block to be accessed of a file 20 to a simultaneous access control part 30. The control part 30 registers the informed request sort, inspects the request and informs the result to the user process 10. The user process 10 executes or waits an I/O instruction in accordance with the information. At the time of receiving DML end information outputted from the user process 10, the control part 30 changes the output request state of the block concerned to the input request state and allows an input request of the other user process waiting the block to be executed.
Patent JP-S6372071-A (JP)
Title: Electrolytic cell
Inventor: SEKIGUCHI HIDEAKI
IPC: H01M8/24
Filed: 1986-09-12
Abstract: PURPOSE:To prevent the separation and increase in contact resistance between a terminal plate and a bipolar plate by using two or more conductive terminal plates, and bonding terminal plates each other and also the terminal plate to an adjacent bipolar plate with conductivity retained to fabricate a terminal. CONSTITUTION:A large number of electrolytic cells each of which consists of a positive electrode 11, a negative electrode 12, and a separator 13 are stacked through bipolar plates 18 to form a bipolar type stacked cell. Terminals on both ends of the bipolar stacked cell are fabricated by bonding a terminal plate 22 to a terminal plate 23, and the terminal plate 22 to an adjacent bipolar plate 17 with conductivity retained between them. As a result, the warp of the stack caused by fastening the stack with bolts 20, and the separation and increase in the contact resistance between the terminal plate and the bipolar plate caused by the difference in thermal expansion coefficient during temperature increase are prevented. This terminal structure is also applied to a bipolar type stacked electrolytic cell.
Patent JP-2001043671-A (JP)
Title: Semiconductor device
Inventor: FUJITA MIKIO
IPC: G11C7/10
Filed: 1999-07-28
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can perform bit processing by simple operation. SOLUTION: Try-state buffers 104-1 to 104-n are provided, as a buffer section 104, between data input/output terminals D0-D15 of a memory cell section 101 and a data bus 71. A buffer control section 105 makes all the try-state buffers 104-1 to 104-n a signal output state at the time of writing data, makes only a part of (n) pieces of the try-state buffers a signal output state selectively at the time of bit processing, and makes the other try-state buffers high impedance. As data in the memory cell section can be rewritten with a bit unit, bit processing can be performed by simple operation.
Patent JP-S59104176-A (JP)
Title: Manufacture of field effect transistor
Inventor: ITOU HITOSHI
IPC: H01L29/812
Filed: 1982-12-07
Abstract: PURPOSE:To manufacture an FET having short gate length and a small gate resistance by wet etching the metal of a gate electrode after dry etching it. CONSTITUTION:A gate electrode metal 45 and a resist mask 46 are formed on a substrate 41 formed with an operating layer 44. Part of a gate electrode metal 45 is first etched by dry etching. Then, the metal 45 is shaped by wet etching in the prescribed size. Thereafter, source and drain electrodes are formed by a lift-off method for removing the resist 46 after covering ohmic contact metal 47. According to this method, the electrode having the short gate length can be formed in a rectangular section, and an FET having small gate resistance can be therefore formed.
Patent JP-2001040419-A (JP)
Title: Manufacture of high strength steel sheet with superior magnetic permeability for cathode-ray tube band
Inventor: HONDA HIRONOBU
IPC: C22C38/00
Filed: 1999-07-28
Abstract: PROBLEM TO BE SOLVED: To provide a steel sheet for cathode-ray tube band, capable of being easily manufactured and having high strength and high magnetic permeability. SOLUTION: A steel slab, which has a composition containing 0.005-0.06% C, 0.05-1.5% Mn, <=0.02% S, 0.019-0.15% Al, and <=0.005% N and also containing, if necessary, either or both of <=0.9% Si and <=0.15% P, is hot rolled. The resultant steel plate is cold rolled at 5-60% cold rolling rate and then continuously annealed at 720-900 deg.C. The resultant steel sheet is used as a solid material or as a plated steel sheet prepared by the application of electroplating with Zn, Ni, Cr, or alloys thereof to improve corrosion resistance. It is preferable to coil the hot rolled steel strip at 500-700 deg.C at hot rolling. Moreover, the continuously annealed steel sheet or the continuously annealed and electroplated steel sheet can be subjected to temper rolling at <=2.5% elongation percentage and then to roller leveling at <=2.0% elongation percentage at sheet surface.
Patent JP-H02210269-A (JP)
Title: Probe device
Inventor: IKEDA TORU
IPC: G01R1/073
Filed: 1989-08-21
Abstract: PURPOSE:To accurately arrange many probes corresponding to many electrodes which are arranged thinnly and closely by providing lead strip lines on one surface of a flexible insulating substrate and ground strip lines on the other surface. CONSTITUTION:The test head of the device which faces an IC chip 14 on a wafer 12 to be inspected consists principally of a probe card 22. Four microstrip line units 32 are arranged on the support plate 24 of the card 22 while facing a center opening part 26 and respective probe terminal parts 44 correspond to an array of electrode pads 16 of the chip 14. Then each microstrip line unit 32 has the conductive lead strip lines 36 on one surface of the flexible insulating substrate 34 and the ground line strip 38 on the other surface corresponding to the lines 36. High frequency characteristics are obtained by the device provided with the card 22 and the structure for measuring the high frequency characteristics can be made extremely thin by utilizing thin film technique.
Patent JP-S6275921-A (JP)
Title: Magnetic head
Inventor: MIKAMI KANSUKE
IPC: G11B5/147
Filed: 1985-09-30
Abstract: PURPOSE:To prevent the exfoliation at a boundary and to improve the productivity of the laminate body itself and magnetic head by allowing an element having strong affinity to oxygen to locally exist in a thin ferromagnetic metallic film thereby improving the adhesiveness between the thin ferromagnetic metallic film and nonmagnetic oxide layer. CONSTITUTION:The thin ferromagnetic metallic film is laminated into several layers - several tens layers via the nonmagnetic oxide layers 2. The element A having the strong affinity to oxygen binds strongly with the constituting element M of the thin film 1 by the metallic bond and at the same time said element binds chemically with the oxygen O in the oxide by the strong affinity to oxygen. The exfoliation at the boundary 4 between the thin film 1 and the oxide layer 2 is prevented by the consequently generated strong adhesive power. Such laminate body 6 is used for a magnetic head 5. The head 5 is formed by joining two magnetic core halves 8a, 8b provided on a substrate 7 so as to face each other via a gap 9. A sliding face consisting of glass 10 is formed atop the substrate 7.
Patent JP-H0878579-A (JP)
Title: Mounter for high-frequency element
Inventor: YOSHIHARA SHINJI
IPC: H01L23/12
Filed: 1994-09-08
Abstract: PURPOSE: To provide a mounter for high-frequency element having a structure, wherein a ground plane to a connection wiring for connecting high-frequency wirings, which are respectively formed on both surfaces of a high-frequency circuit board, with each other is specially set and the connection wiring and a package cover ate opposedly provided in parallel to each other at a prescribed interval so that a characteristic impedance adjusted a matching is obtained for the connection wiring. CONSTITUTION: High-frequency wirings 131 and 132 are respectively formed on both surfaces of a high-frequency circuit board 11 with high-frequency circuit components 121 and 122 installed on both surfaces thereof and these wirings 131 and 132 are respectively extended to the peripheral edge parts on the sides of both surfaces of the board 11 and are connect with each other through a connection wiring 14 which is formed on the side peripheral surface of the board 11. This board 11 is housed and installed in a conductive package cover 15 and an internal D between the inner surface of this cover 15 and the side peripheral surface of the board 11 is set at a prescribed value. That is, the wiring 14 and the cover 15 are opposedly provided in parallel to each other at the interval D and the characteristic impedance of the wiring 14 is performed a matching.
Patent JP-H0876785-A (JP)
Title: Voice recognition device
Inventor: HATTORI HIROAKI
IPC: G10L15/06
Filed: 1994-09-08
Abstract: PURPOSE: To always obtain high recognition precision by conducting voice recognition of correct candidates employing standard and input patterns. CONSTITUTION: Voice waveforms inputted to an input terminal 110 are converted to feature vector series by an analysis section 120. These feature vectors are transmitted to an input pattern storage section 130, maintained as input patterns and simultaneously sent to a preliminary recognition section 160. The section 160 reads the transmitted feature vectors and the all standard patterns stored in a standard pattern storage section 150 from signal lines 153, conducts preliminary recognition and obtains N correct candidates in the higher order of the degree of similarity. A standard pattern adaptive section 170 reads the input patterns, N correct candidates and standard patterns and performs adaptive operations. The standard patterns which are made adaptive are stored in the section 150. Moreover, a main recognition section 180 reads the input patterns, N pieces of the correct candidates and the standard patterns of the correct candidates, performs matching, obtains the degree of similarity and the recognized results are outputted to an output terminal 190.
Patent JP-H09121854-A (JP)
Title: Method for inactivating carboxypeptidase y in culture medium containing hirudine
Inventor: PEETAA KURAUZE
IPC: C07K14/815
Filed: 1996-08-15
Abstract: PROBLEM TO BE SOLVED: To obtain hirudin in a high recovering percentage with surely inactivating carboxypeptidase-Y(CPY) in a hirudin-containing culturing medium without varying a produced strain by a mutation, etc., by subjecting the CRY to inactivating treatment under a specific narrow temperature/time condition by a continuous treatment in a flow-through heat exchanger.  
     SOLUTION: A hirudin-containing culturing medium obtained from a transformed yeast, preferably Saccharomyces cerevisiae is flowed through a tubular apparatus having a heating section, a holding section and a cooling section and the culturing medium is continuously heated at 80-100°C, preferably at 85°C in the heating-holding sections. An average stagnation time of the culturing medium in the heating section is preferably 40-60sec. 
     COPYRIGHT: (C)1997,JPO
Patent JP-H0559620-A (JP)
Title: Active carbon fiber having large fiber diameter and its production
Inventor: OTAGURO YUKIHIRO
IPC: C01B31/02
Filed: 1991-08-27
Abstract: PURPOSE:To obtain the objective active carbon fiber having prescribed values or above of BET specific surface area and diameter by melt spinning pitch, forming the melt into a pitch fiber sheet having bulkiness within a prescribed range, infusibilizing the pitch fiber sheet and then carrying out activating treatment. CONSTITUTION:Pitch obtained from petroleum-based or coal-based heavy oil as a raw material is melt-spun to provide a pitch fiber sheet having 10-25kg/m<3> bulkiness. The resultant sheet is subsequently infusibilized and then subjected to activating treatment to afford the objective active carbon fiber having >=500m<2>/g BET specific surface area and >=20mu fiber diameter.
Patent JP-S59105478-A (JP)
Inventor: TAKESHITA TOORU
Filed: 1982-12-08
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6278192-A (JP)
Title: Production of n-type single crystal thin film
Inventor: KONAGAI MAKOTO
IPC: C30B29/06
Filed: 1985-09-30
Abstract: PURPOSE:To form an n-type single crystal thin film at low temperature by, subjecting a mixed gas consisting of a fluorosilane, a silane and a compound of group V to photolysis to form a single crystal thin film. CONSTITUTION:A mixed gas consisting of a fluorosilane, a silane, a compound of group V and preferably hydrogen is subjected to photolysis to form an n-type single crystal thin film. In this process, the n-type single crystal thin film is formed even at a low temperature of a substrate of <=300 deg.C. A compound shown by the formula I (n is 1-3) or Si2F6 are especially useful as the fluorosilane used. A monosilane, disolane or trisilane shown by the formula II (m is 1-3) is effectively used as the silane. PH3 or AsH3 are used as the compound of group V. In the method, the single crystal thin film is subjected to epitaxial growth on an n-type single crystal substrate as especially preferable form. The photolysis by ultraviolet rays is especially preferable and sensitization reaction of photolysis may be used.
Patent JP-S58112367-A (JP)
Title: Semiconductor device
Inventor: HAGIWARA MUNEYUKI
IPC: H01L29/78
Filed: 1981-12-25
Abstract: PURPOSE:To facilitate the high integration of a MOSLSI, by forming gate regions on source drain regions and further the wiring region of the source drain regions by self-alignments. CONSTITUTION:A thick oxide film 5 is etched, thus a semiconductor substrate surface 9 serving as a channel region is exposed, and thereafter a gate oxide film 10 is formed by a thermal oxidation. Simultaneously, an insulation oxide film 11 is formed, and, on an Si semiconductor thin film layer containing a high density effective impurity, an oxide film, having a film thickness 2-5 times as large as the thickness of a single crystal Si semiconductor oxide film containing a low density effective impurity, is formed. Thereon, a polycrystalline Si is grown, and thus a gate electrode 12 is formed by a photo resist technique.  Thereafter, the gate electrode 12 is insulated by a thin insulation oxide film 13  by an oxidation, and, finally a PSG film 14 is grown as a passivation film resulting in the formation of a MOS transistor of a figure wherein the gate region is self-aligned to source and drain regions and wiring regions thereof 15 and 16.