baber/WOPTO huggingface dataset:
Patent JP-H0314599-A (JP)
Title: Peptide derivatives
Inventor: ALBERT RAINER
IPC: A61K31/70
Filed: 1990-06-04
Abstract: NEW MATERIAL: A sugar derivative of a bioactive peptide having a prolonged duration of action than a non-sugar modified peptide which is bonded directly to an amino group, at least one of an amino acid unit, by a linkage other than an N-glycoside linkage, and for the condensation product of a peptide having a carboxyl group-containing sugar and less than eight amino acid units, is bonded directly by a linkage other than an amide linkage.  
     USE: A remedy for hyposecretion of growth hormone, biabetes mellitus, acropachyderma, etc.  
     PROCESS: For example, an N-protected amino glycol, etc., are reacted with a resin having an aldehyde group to be acetalized, the protective group of the amino group is eliminated, natural peptide (example: somatostatin, etc.), whose N-terminal amino group is protected is bonded to this in the presence of a condensing agent, peptide alcohol is produced by hydrolysis with trifluoroacetic acid etc., and the objective peptide derivative is obtained by removing the amino protective group from the peptide alcohol and reacting with D-(+)-glucose. 
     COPYRIGHT: (C)1991,JPO
Patent JP-H0264996-A (JP)
Title: Nonvolatile memory reading circuit
Inventor: FUJIMOTO KAZUYA
IPC: G11C16/06
Filed: 1988-06-14
Abstract: PURPOSE:To reduce current consumption by adding a circuit to generate a signal to interrupt a pull-up transistor under an interlocking state to the definition of a bit line level. CONSTITUTION:A memory cell 1 is connected between a bit line 7 and a GND, and a pull-up transistor TP1 is connected between the bit line 7 and a power source. A sense amplifier 4 is connected to the bit line 7, and the state of the signal of the addressed memory cell 1 is read. Consequently, when an output signal 'L' is to be read from the memory cell 1, a current path is interrupted by inputting the signal, which is outputted from the sense amplifier 4 and makes the pull-up transistor TP1 into an OFF state. Thus, the current consumption can be reduced without enlarging a chip size.
Patent JP-H037251-A (JP)
Title: Production of (-)-n-methyl-3-(2-methylphenoxy)- 3-phenylpropylamine
Inventor: BENII JIEI FUOSUTAA
IPC: C07C217/18
Filed: 1990-06-05
Abstract: The (-)-enantiomer of the compound of formula (I): <CHEM> and its pharmaceutically-acceptable salts, are effective anti-depressant agents.
Patent JP-S634180-A (JP)
Inventor: MATSUMOTO TAKEJI
IPC: E04H12/28
Filed: 1986-06-25
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H076105-A (JP)
Title: Electronic mail system
Inventor: NAGATA TAKASHI
IPC: G06F13/00
Filed: 1993-06-18
Abstract: PURPOSE:To obtain information indicating to whom an original is sent when an individual affixed file is a copy by providing this system with a mail display contents forming device for forming the display contents of a mail from the contents of a mail header and a file list and outputting the formed contents to an output terminal. CONSTITUTION:An original/copy attribute setting device 203 outputs a file affixer to be required for inputting a transmission mail 5 and judging whether a file affixed to the mail 5 is an original or a copy on the receiving side and a file original destination to be information for knowing to whom the original is sent to an attribute description file stored in the main 5. Then the device 203 outputs the data to a mail transferring device 204 as an original/copy attribute set transmission mail 6. The file original destination is acquired from the main original destination set up in the mail header at the time of affixing the file. The device 204 delivers a mail 7 in accordance with the destination set up in the mail 6.
Patent JP-S6038126-A (JP)
Title: Embossing device in continuous vulcanizer for rubber sheet
Inventor: OONISHI HISAAKI
IPC: B29C59/00
Filed: 1983-08-11
Abstract: PURPOSE:To make mass production of products with an embossed plane each by a method wherein pressure rolls 12A, 12B with embossing rolls are provided in front of introducing rolls and driving of the pressure rolls and the introducing rolls is made variable to provide a tentering cutter mechanism between these rolls. CONSTITUTION:Pressure rolls 12A, 12B between which only a rubber sheet S is put are provided in front of introducing rolls 4A, 4B and at least one of the pressure rolls as made up of an embossed roller. The pressure rolls 12A, 12B and the introducing rolls 4A, 4B are free to be driven at variable speeds. A tentering cutter mechanism 24 is provided between the pressure rolls 12A, 12B and the introducing rolls 4A, 4B.
Patent JP-S628528-A (JP)
Title: Manufacture of semiconductor device
Inventor: MAEDA MUNEO
IPC: H01L21/316
Filed: 1985-07-04
Abstract: PURPOSE:To obtain a semiconductor oxide film having a high quality without any damage due to oxygen plasma, by oxidizing an aluminium film by microwave excited oxygen plasma and further oxidizing the semiconductor material under the aluminium film. CONSTITUTION:An Al film 22 is adhered on a GaAs substrate 21, and is oxidized by microwave excited oxygen plasma to produce an Al2O3 film 22'. Further, the GaAs substrate 21 is oxidized to produce a GaOxAsOy film 21'. Then an SiO2 film 23 is provided by means of the vapor-phase growth. After resist film patterns 24 are formed and the SiO2 film is patterned, the Al2O3 film 22' oxidized by the plasma oxidization is removed by the reverse sputtering. Ions of an N-type impurity are implanted into the substrate masked with a gate electrode 25 to form source and drain region 26.
Patent JP-S633463-A (JP)
Title: Manufacture of thin film transistor
Inventor: HAYASHI YUTAKA
IPC: H01L21/205
Filed: 1986-06-24
Abstract: PURPOSE:To perform stable operation characterized by high mobility, by using a silicon film made by thermal CVD of high-order silane such as trisilane or higher as a channel semiconductor film of a thin film transistor. CONSTITUTION:On an insulating substrate 1, a gate 2 comprising Ni, W, Mo and the like is formed by evaporation, sputtering and the like. A gate insulating film 3 such as a silicon oxide film and silicon nitride film is laminated by a CVD method and the like on the gate 2. A silicon film 4 of high-order silane such as trisilane or higher is formed by a thermal CVD method on the film 3. A source 5 and a drain 6, which have doublelayer structure of a P-or N-type low resistance semiconductor film and a metal film, are formed. An inverted staggered type thin film transistor is formed. The silicon film 4 is formed as follows: the substrate is heated to a temperature of about 400 deg.C; the high order silane such as the trisilane or higher is introduced in a chamber 7; and the film 4 is formed on the surface of the substrate by thermal decomposition reaction on the substrate.
Patent JP-H0441685-A (JP)
Title: Method for etching stainless steel coated with hard ceramic film
Inventor: UZUKI YOSHIO
IPC: C23F1/00
Filed: 1990-06-07
Abstract: PURPOSE:To enable a fine clear finish by etching by forming a resist pattern on a hard ceramic film, removing the part of the film not covered with the resist pattern and carrying out etching. CONSTITUTION:A resist layer is formed on the entire surface of a stainless steel sheet coated with a hard ceramic film and a prescribed resist pattern is formed by exposure with a photomask and development. The part of the ceramic film not covered with the resist pattern is then dissolved or removed. After this pretreatment, the steel sheet is etched by spraying an etching soln. A fine finish by etching can surely be attained.
Patent JP-H0313020-A (JP)
Title: Highway accommodation changeover system
Inventor: UMEMIYA TSUGIO
IPC: H04J3/00
Filed: 1989-06-09
Abstract: PURPOSE:To save a digital multiplexer in lines by multiplexing one line group into two highways when no changeover is implemented by a line changeover means, and multiplexing the line group into one highway when the changeover is implemented. CONSTITUTION:When a line switching section 12 is not switched, four lines 11a1-11a4 with the degree of multiplexity 16 are multiplexed to two highways 20a, 20b whose degree of multiplexity is 32, respectively. When the line switching section 12 is switched as shown in dotted lines, the lines 11a3 and 11a4 are inputted to a line concentration section 13a through connection lines 15a1 and 15a2. Then the lines are concentrated together with the lines 11a1, 11a2. That is, when lines accommodated in a line adaptor section 11 are low traffic lines, the same digital multiplexer as that not making line concentration is used and the line concentration of 2:1 is applied by having only to switch lines in a line switching section 12a to halve the number of highways subject to multiplexing.
Patent JP-S628338-A (JP)
Title: Tracking servo circuit
Inventor: WATANABE YOSHIHIKO
IPC: G11B7/085
Filed: 1985-07-03
Abstract: PURPOSE:To cope titled circuit with also a spring support type actuator by providing a high frequency equalizer circuit and a low frequency equalizer circuit and applying drive control to the actuator based on an overlapped output of each output. CONSTITUTION:A tracking error signal via a pre-stage part of the high frequency equalizer circuit 2 is fed to the low frequency equalizer circuit 3. The tracking error signal subject to low frequency correction by the low frequency equalizer circuit 3 is fed to a post-stage of the high frequency equalizer circuit 2 and overlapped on the tracking error signal subject to high frequency correction. The tracking error signal outputted from the high frequency equalizer circuit 2 is fed to a drive circuit 4, from which a drive signal for the tracking actuator 5 is obtained. The tracking actuator 5 is the spring support actuator.
Patent JP-H10336000-A (JP)
Title: High-frequency signal switch
Inventor: NORO HIDEHISA
IPC: H03K17/687
Filed: 1997-06-05
Abstract: PROBLEM TO BE SOLVED: To provide a high-frequency signal switch which can obtain sufficient isolation characteristic, with a simple constitution. SOLUTION: A high-frequency signal switch is constituted of a series element, which connects the input and output of the switch to each other and a shunt element which grounds the output terminal of the switch. The shunt element contains a capacitor C1 which resonates with a leakage inductance L1 contained in an FET(field effect transistor) 2 and the shunt element as a whole at the center frequency f2 of a transmission band. At the time of improving the isolation characteristic of the switch, the characteristic can be improved to about -10 dB, by lowering the total impedance of the shunt element which is 8 Ωto 2 Ω, when the impedance of the inductance L1 is canceled by means of the capacitor C1, and when the value of the turning on resistance of the FET 2 is 2 Ω and the impedance of the inductance L1 is 6 Ω.
Patent JP-H08337714-A (JP)
Title: Heat-resistant electroconductive resin composition
Inventor: KIMURA TOMOHIRO
IPC: C08L53/02
Filed: 1995-06-14
Abstract: PURPOSE: To obtain an electroconductive resin composition excellent in heat resistance, conductivity, impact strength and moldabiliy. CONSTITUTION: This resin composition comprises a resin component (a) containing 30-98wt.% of a polyphenylene ether polymer with a number-average molecular weight of 1,000-25,000 and 70-2wt.% of a styrene resin and a resin component (b) containing (i) 90-10wt.% of an ethylene-acrylic ester copolymer and (ii) 10-90wt.% of an A-B-A' type block copolymer with a number-average molecular weight of 2,000-100,0000 and carbon black as component (c).
Patent JP-S6037768-A (JP)
Title: Charge transfer element
Inventor: KURODA KENICHI
IPC: H01L27/148
Filed: 1983-08-10
Abstract: PURPOSE:To obtain the titled element of high speed and low cost by a method wherein charges are trasferred by excitation of the elastic surface. CONSTITUTION:Photo signals propagate through a Ga1-yAlyAs 1b and are made incident to one of series photo diodes 3. Since the film thickness of a Ga1-xAlxAs 2b gradually decreases in the incidence region, light are made incident sufficiently to a GaAs epitaxial layer 11 on a semi-insulation GaAs substrate 10b, and then converted into an electric signal. Charges generating in the diode 3 are accumulated in a gate electrode 7 and then transferred to the GaAs layer 11 under a ZnO piezoelectric thin film 13. At this time, when elastic surface waves are excited by impressing an AC voltage on an inter-digital electrode 14, the charges accumulated in the layer 11 are trapped by a potential well generated by excitation and transferred at a sound speed. Therefore, photo signals dispersed in a spatial manner can be detected as time series electric signals. This construction enables to obtain the titled element of high speed and low cost.
Patent JP-H092229-A (JP)
Title: Anti-lock braking device for vehicle
Inventor: IDA MASAHIRO
IPC: B60T8/48
Filed: 1995-06-14
Abstract: PURPOSE: To provide an anti-lock braking device simple in constitution so as to be manufactured at a low cost and suited to an evacuating method without needing to actuate a hydraulic pump after the completion of anti-lock control. CONSTITUTION: A control valve 14 for controlling the fluid pressure of wheel brakes 16, 18 is composed of a solenoid valve 14a and solenoid cutoff valves 14b, 14c. A brake fluid in a low back pressure reservoir is divided and fed to the wheel brakes 16, 18 by a hydraulic pump 29 through one-way valves 23, 26 and orifices 24, 27. The valve body of the solenoid valve 14a can be moved by fluid pressure in the normal state. The seat face of the inlet valve 21c of the hydraulic pump 20 is provided with a small slit for vacuum transmission.
Patent JP-H0323673-A (JP)
Title: Field-effect transistor having asymmetric structure and manufacture thereof
Inventor: KURISUTOFUAA FURANKU KOODERA
IPC: H01L21/28
Filed: 1990-06-07
Abstract: PURPOSE: To make the dynamic characteristic good by providing source and drain regions of a second conductivity type separated by channel regions on the surface of a semiconductor substrate of a first conductivity type, coupling drain extensions of a lower dopant concn. than that of the drain region with channels and providing gate electrodes thereon. CONSTITUTION: An N<+> type source region 14 and N<+> type drain region 16 of an IGFET 10 are formed while separating them by a channel portion 18. On a channel part 18, a gate structure 20 is formed, including a doped polycrystal, Al-Cu electrodes 22 covered with Si3 N4 side walls 26A, 26B at both sides through an SiO2 thin film 24. A lightly doped N<-> type region 30 is added to the lower face of the source region 14, the ends are coupled with one end of the channel part 18, and N<-> type region 28 on the top end of the drain region 16 is coupled with the other end of the channel region 18. This allows the gate length to be on the order of submicrons and makes the dynamic characteristic good.
Patent JP-S5671627-A (JP)
Title: Fitting of muffler for vehicle
Inventor: TAKEUCHI YOSHIHISA
IPC: B60K13/04
Filed: 1979-11-14
Abstract: PURPOSE: To avoid the concentration of stress on bellows tube and raise its durability by placing the bellows tube on the rotary center of a muffler.  
     CONSTITUTION: An engine 2 and a muffler 1 are connected with an exhaust pipe 3 by a bellows tube 4, and the muffler 1 is attached through an elastomer material 5 to a car body 6 and also attached to the engine 2 through brackets 8a, 8b, 7a, and 7b. Each of the brackets is connected by pins 9a and 9b, and rotary center line X-X is so designed as to pass through the center of the bellows tube 4. Since the rotary center of the muffler passes through the bellows tube 4, only simple bending stress is applied to the bellows tube 4 even when the muffler and the engine are mutually bent by the oscillation of the engine. Thus, the durability of the bellows tube can be raised. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H10332852-A (JP)
Title: Electronic time piece
Inventor: MURAKAMI AKINARI
IPC: G04G3/02
Filed: 1997-06-05
Abstract: PROBLEM TO BE SOLVED: To compulsorily operate a stepping rate adjustment circuit immediately after rewriting a memory and enable quickly rate measurement by providing a forced operation circuit compulsorily operating the rate adjustment circuit. SOLUTION: An oscillation circuit 1 oscillates a reference signal, a frequency division circuit 2 divides frequency of the signal of the oscillation circuit 1 and a rate adjustment circuit 3 adjusts the rate by logically operating the frequency division circuit 2. A timing forming circuit 4 determines the operation timing of the rate adjustment circuit 3 and a waveform shaping circuit 5 forms a signal for motor driving using the signal of the frequency division circuit 2. When a memory rewriting circuit 10 rewrites a memory 9, a forced operation circuit 11 receives a rewriting completion signal of a memory rewriting circuit 10 and compulsorily operates the rate adjustment circuit 3 regardless of the timing forming circuit 4.  By this, a rate adjustment based on the contents of the new memory 9 is done immediately after writing in the memory 9 and rate measurement can be quickly performed.
Patent JP-S6075696-A (JP)
Inventor: SUGAWARA HIROSHI
IPC: D21F1/00
Filed: 1983-08-11
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5372405-A (JP)
Title: Control system for switchboard
Inventor: YABE HIDEO
IPC: H04M3/60
Filed: 1976-12-10
Abstract: PURPOSE:To increase the flexibility to the alteration of function and to improve the program productivity and system economy, by giving suitable allocation of functions to a plurality of processors.
Patent JP-H10332468-A (JP)
Title: Measuring instrument
Inventor: HARA HIROSHI
IPC: G01B11/02
Filed: 1997-06-05
Abstract: PROBLEM TO BE SOLVED: To enhance the efficiency of measuring work while reducing the overall size of a measuring instrument by monitoring the weight of a scale, reading out an image upon variation of the weight and then reading out the size of an object to be measured, and characters, codes, or the like, affixed thereto. SOLUTION: A scale 6 is disposed at the upper part of the weighing section body 5 of a weighing section 2 and a load cell section, comprising a load cell coupled to the lower part of the scale 6 and an amplifier for amplifying the output from the load cell, is disposed in the weighing section body 5. An image read-out section 4 comprising an area CCD 7 and a lens 8 reads out the image of an object 9 mounted on the scale 6. Since various information concerning to the object 9 can be obtained when an operator mounts the object 9 simply on the scale 6, the work efficiency can be enhanced. Furthermore, the overall size of the equipment can be reduced because the scale 6 also serves as a mounting base when the image of the object 9 is picked up and no mounting base is required additionally.
Patent JP-H05344103-A (JP)
Title: Line monitoring system
Inventor: YAMAMOTO RIEKO
IPC: H04B3/46
Filed: 1992-06-09
Abstract: PURPOSE:To always monitor lines in both active and reserve systems without affecting the data of the active system when the phases of the two kinds of data are matched with each other or not. CONSTITUTION:First data 207 and second data 208 are inputted to 7th and 8th selective circuits 21 and 22, and either of them is outputted as output signals 210 and 211. Comparative data 209 and the output signal 210 are inputted to a first comparator circuit 24 and, an output signal 301 being the compared result is outputted from a first comparator circuit 24. The comparative data 209 and the output signal 211 are inputted to a second comparator circuit 25 and, an output signal 302 being the compared result is outputted from the second comparator circuit 25. The output signals 210 and 211 are inputted to a 9th selective circuit 23, either of them is outputted as an output signal 304, the output signal 304 and the comparative data 209 are inputted to a third comparator circuit 26 and an output signal 303 being the compared result is outputted from the third comparator circuit 26.
Patent JP-S5575271-A (JP)
Title: Solid state photoelectric converter
Inventor: KOMIYA KAZUMI
IPC: H01L31/02
Filed: 1978-12-01
Abstract: PURPOSE: To make a solid state photoelectric converter compact, by combining a plate-shaped solid light source with an image sensor which has a large size and is provided with light interception layer for preventing a row of light receivers from being directly illuminated.  
     CONSTITUTION: A plate-shaped solid light source 9 is provided on a transparent substrate 5 opposite the original 1. Light interception layers 10 are provided at a desired spacing on the original-facing side of the substrate 5 to prevent the rays 12 of light of the light source 9 from directly illuminating light receivers 6. A transparent insulating layer 11 is provided on the light interception layers 10 and the substrate 5. The light receivers 6 are arranged on the insulating layer 11 so that the light receivers are located between the light interception layers 10 and the contact face of the original 1 and the light reception faces of the light receivers extend parallel with the surface of the original. A transparent protective layer 7 is provided on the light receivers 6 and the insulating layer 11. The rays 12 of light of the light source 9 are transmitted through the gap between the layers 10 and through the other layers 11, 7 to illuminate the original 1. The light reflected on the original is converted into electricity by the light receivers 6. Since a portion 12' of the rays 12 of light is blocked by the layers 10, the portion does not cause disturbance. This results in improving the SN ratio and making a solid state photoelectric converter compact. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S6127393-A (JP)
Inventor: MIYAMOTO ICHIRO
IPC: F16L59/06
Filed: 1984-07-17
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5271700-A (JP)
Title: Production of dielectric material for microwave use
Inventor: TAKAMIZAWA HIDEO
IPC: C04B35/00
Filed: 1975-12-11
Abstract: PURPOSE: Production of dielectric oxide ceramic material of BaO-TiO 2  system of of low dielectric loss baving a dielectric constant more than 30 in a microwave fre frequency band and having a low temperature coefficient for dielectric constant and resonance frequency. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-H0814847-A (JP)
Title: Lead inspection device and method therefor
Inventor: KOTSURU HIDEAKI
IPC: G01B11/24
Filed: 1994-06-29
Abstract: PURPOSE:To provide a lead inspection device capable of performing highly accurate inspection with a semiconductor device package housed in a tray, regarding semiconductor device inspection. CONSTITUTION:This device has a tray 1 with a window 2 to allow the irradiation of light from a lower position toward a lead, when a semiconductor device package is housed, as well as a scanner 8 to detect the position of the lead via the irradiation of light from a position under the tray 1 toward the lead surrounding area of the housed package via the window 2.