baber/WOPTO huggingface dataset:
Patent JP-H0813628-A (JP)
Title: Connection structure of sheet metal made of metal
Inventor: SATOU MASAKUNI
IPC: E04D3/368
Filed: 1994-06-29
Abstract: PURPOSE:To connect mutual sheet metals made of a metal extremely simply, and to bring the joint section to a comparatively fine state. CONSTITUTION:A weldable film piece 2 for joint is stuck at the desired place of a sheet metal P made of a metal, the film piece 2 for joint of another sheet metal P made of the metal, in which the film piece 2 for connection is stuck similarly at a desired place, is superposed on the film piece 2 section for joint, and both film pieces 2, 2 for joint are welded and fixed. Or the film piece 2 for connection is pasted at a desired place on the rear side of the sheet metal P made of the metal covered with a weldable color decorative synthetic-resin film material 1, and the color decorative synthetic-resin film material of another sheet metal P made of the metal is superposed similarly on the film piece 2 for joint and welded and fastened.
Patent JP-H1110645-A (JP)
Title: Method for removing coating film
Inventor: SUZUKI NORIMITSU
IPC: B29B17/04
Filed: 1997-06-25
Abstract: PROBLEM TO BE SOLVED: To mechanically continuously process a resin molding having a coating film without using solvent or water by removing the film by applying an impact after heating and pressing the crushed material of the molding. SOLUTION: A resin molding is crushed, and crushed material 2 is preheated by a hot press 1. Its temperature at this time is set to a thermal deformation temperature to its melting point, and its preheating time is set, for example, to about 30 to 60 sec. The heating is conducted from both upper and lower sides of the material 2 by using both pressing bases 3. And, this is pressed by a hot press 1. For example, its pressure is 5 kg/cm or more, its temperature is about 140 to 170C and its pressing time is 1 sec or more. Then, the pressed material 2 is filled in a mortar-like container. An impact is given to a rod-like striking unit to release a coating film. The impact is of the degree that it is given by a plurality of times of man-power. And, this step is executed while resin temperature is high.  And, the film is separated from the resin by a wind selector, and only the film is discharged.
Patent JP-S5870690-A (JP)
Title: Driving signal generating circuit
Inventor: IKEDA MIYUKI
IPC: G09G3/36
Filed: 1981-10-23
Abstract: PURPOSE:To obtain a driving signal so as to obtain 50% of duty cycle at the entire period, by using different frequency of the driving signal for a vertical blanking period and other periods. CONSTITUTION:When a vertical synchronizing signal VS is applied to a D input of a D flip-flop 9 through an OR gate 1 and a storobe signal STB is given to a  CP input for the vertical synchronizing signal period, a Q output of the D flip- flop goes to high level, and when a scanning start position signal VST is applied  to a reset terminal R, a vertical blanking period signal VB is obtained. A horizontal synchronizing signal HS is applied to a T input of a T flip-flop 6 to obtain signals of double horizontal period with different polarity. One out of the  two signals is applied to an NAND gate 4 via T flip-flops 7, 8 and the other is  directly applied to an NAND gate 3, and driving signals with a short period at  the vetical blanking period and a long period at other periods can be obtained.
Patent JP-S6146713-A (JP)
Title: Vehicle cooling storage operation control device
Inventor: KAJINO YUICHI
IPC: B60N3/10
Filed: 1984-08-10
Abstract: PURPOSE:To prevent the cooling capacity of an air-conditioning evaporater from being detracted, by providing such an arrangement that the supply of coolant to a cooling storage evaporator is limited when the cooling capacity of the air- conditioning evaporater is insufficient. CONSTITUTION:In a refrigerating cycle system 5, coolant compressed by a compressor 10 is led through a circulation passage, as indicated by the arrow, then is fed from the circulation passage into two evaporates 3, 9 through a condenser 12 and a receiver 13, and is then returned into the compressor 10. There are provided a constant pressure expansion valve 14 and a solenoid valve 15 for selectively using the evaporaters 3, 9. Further, a suitable pressure reducing means is disposed between the evaporator 9 and the solenoid valve 15. However, when the solenoid 15 is opened during cooling operation of the air-conditioning system, the constant pressure expansion valve 14 will not be opened due to a difference in communication resistance so that no substantial cooling effect is appreciated by the evaporator 3 in the cooling storage 1. Accordingly, the solenoid valve 15 is opened and closed to prevent the cooling capacity of the air- conditioning evaporator 9 from being detracted.
Patent JP-S5958364-A (JP)
Title: Frequency measuring system
Inventor: ISHII YOSHINORI
IPC: H02H3/46
Filed: 1982-09-28
Abstract: PURPOSE:To obtain an approximate value of an unknown frequency, by performing the reset of a shift register having a reference frequency signal and data inputs of ''1'' level by the signal of a frequency to be measured, and deriving the ratio of the signal of the frequency to be measured and the reference signal. CONSTITUTION:A reference frequency signal (f) is supplied to a terminal (c) and, while a data input of ''1'' level is fixed and fed to shift register 5. On the other hand, the signal of a frequency to be measured is supplied to a differentiating circuit 4 from a terminal (d) and differenciated and the register 5 is reset by a rising pulse. In this case, the data ''1'' is successively shifted in the order of 1, 2...Q by the clock pulse of the reference signal (f) and the resetting of the register 5 is performed whenever a signal to be measured is inputted. After the resetting, the shift register 5 is restored and the data ''1'' is successively shifted to the Q by the clock pulse of the reference signal (f) and, at the same time, the ratio of the frequency to be measured and reference frequency (f) is calculated from the shift of the data ''1''. Therefore, an approximate value of a frequency can be obtained easily at a circuit having a simple hardware scale.
Patent JP-H0459177-A (JP)
Title: Arc welding power unit
Inventor: MOTOMIYA AKINORI
IPC: B23K9/067
Filed: 1990-06-27
Abstract: PURPOSE:To obtain good arc start performance and to improve welding workability by changing over an electric current supplied between a welding wire and base metal in time of the welding wire tip in a cooled state and in time of this in a red-hot state. CONSTITUTION:The temperature of the welding wire 8 tip is monitored at the time from welding completion. When the welding wire tip is in a cooled state, a capacitor 20 connected with an output terminal of a welding power source is charged for a period of time from a welding starting command till the welding wire comes into contact with the base metal and a welding current flows. When the welding wire comes into contact with the base metal, electric charge of the charged above-mentioned capacitor is charged and a discharge current is applied to a contact part between the welding wire and the base metal. In addition, when the welding wire tip is in a red-hot state, the above- mentioned capacitor is not charged nor discharged. The good arc start performance is obtained in the same way on the welding wire tip and welding workability can be improved by changing over the current supplied in a state with the welding wire tip cooled and in a state with this red-hot in this way.
Patent JP-S6222052-A (JP)
Inventor: JIEFURII HAADEINGU
IPC: G01N23/20
Filed: 1986-07-19
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6211226-A (JP)
Title: Heat treatment method for iii-v compound semiconductor
Inventor: KASAHARA JIRO
IPC: H01L21/265
Filed: 1986-07-18
Abstract: PURPOSE:To obtain an ion implantation layer having electrically and optically excellent reproducibility and uniformly while simplifying heat treatment by implanting ions to the surface of a III-V compound semiconductor and thermally treating the substrate in the atmosphere of a V-group hydride and a carrier gas containing an inert gas. CONSTITUTION:A III-V substrate 5 to which ions are implanted is placed into a heat treating furnace 4, in which an electric furnace 2 is installed outside a core pipe 1 and a quartz inner pipe 3 is arranged into the pipe 1, so that a surface 5a to which ions are implanted is brought into contact downward with a quartz board 6. A group V element hydride gas 12 and a carrier gas 13 are fed into the furnace 4 from a gas cylinder 7 for a group V hydride and a carrier-gas supply means 16, and the substrate 5 is thermally treated under predetermined partial pressure. A protective film need not be used on heat treatment, thus simplifying a heat treatment process while improving reproducibility and uniformity.
Patent JP-H0728190-A (JP)
Title: Silver halide sensitive material
Inventor: UEDA EIICHI
IPC: G03C1/795
Filed: 1993-07-08
Abstract: PURPOSE:To provide a photosensitive material which does not tend to wind and which allows easily removing the winding tendency in the developing process by giving a polyester film a characteristic that the curl value varies secularly, and furnishing a hydrophilic colloid layer after the film is subjected to a latex undercoat process. CONSTITUTION:A silver halide sensitive material concerned has at least one silver halide emulsion layer on at least one of the surfaces of a polyester film, wherein such a characteristic is provided that the curl value of the film varies secularly, and the film is subjected to a latex undercoat process and then equipped with a hydrophilic colloid layer. The characteristic that the curl value of polyester support continuously varies secularly, can for example be attained by laminating at least two polyester resin layers having different amount of secular contraction. The polyester resin used therein is one which contains as main component a repetition unit consisting of dicarbonic acid and diol, favorably a repetition unit of aromatic dibasic acid and glycol.
Patent JP-H0836521-A (JP)
Title: Image processor
Inventor: EDAMATSU TATSUO
IPC: H04N1/21
Filed: 1994-07-21
Abstract: PURPOSE:To provide an image recording device which shortens the time of access to a storage means and enables efficient access according to the state of the storage means. CONSTITUTION:In the image processor which records data inputted from an external device on a specific recording medium and outputs the data, a host computer 107 writes data A in a memory 102 as shown by C and stores data B to be read by an MPU 101 as shown by D. The MPU 101 calculates the number E of data stored in the memory 102 and reads data out of the memory on the basis of an access frequency. A read pointer 103 and a write painter 104 both use a counter, namely, an UP/DOWN counter 105 performs counting operation, and a selector 106 connects the data bus F of the memory to the MPU 101 or host 107 according to whether data are read or written.
Patent JP-S5692793-A (JP)
Title: Preparation of coenzyme q10 by microorganism
Inventor: MASE TAMIO
IPC: C12P7/66
Filed: 1979-12-27
Abstract: PURPOSE: To prepare coenzyme Q 10  in high yield, by cultivating a microorganism belonging to the genuses Paecilomyces and Monascus, and Aspergillus clavatus.  
     CONSTITUTION: A microorganism, e.g. Paecilomyces varioti No.9215 (FERM-P No.5304), Monascus anka or Aspergillus clavatus, is cultivated in a suitable  nutrient culture medium by the submerged liquid culture method with aeration or  stationary liquid culture method. The culture fluid thus obtained is centrifuged or  filtered to give the microbial cell, which is saponified and extracted with a mixture  of methanol with pyrogallol and sodium hydroxide under refluxing. Coenzyme Q 10   of the formula extracted from the saponified solution is fractionated, purified and  isolated by the crystallization from ethanol. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H0837290-A (JP)
Title: Electrical charge transfer method and device
Inventor: MASUKO SEIICHI
IPC: H04N5/341
Filed: 1994-07-21
Abstract: PURPOSE:To enable signal charge to be normally transferred lessening drive pulses in voltage by a method wherein pulses which are of the same period with reset pulses and shorter than drive pulses in duration of high level are applied to the barrier of the final register of a CCD register. CONSTITUTION:Reset pulses RS are applied to a transfer electrode 16 provided onto a P-type impurity region 10 which is corresponding to the barrier of a final register. Drive pulses phi1 are applied onto a transfer electrode 4 provided onto the upside of the N-type buried channel layer 12 which corresponds to the storage of the final register. The barrier of the final register changes in potential 25 with the reset pulses RS. Drive pulses phi1 and phi2 are complementary to each other. The same reset pulses RS are applied to a reset gate electrode 2.
Patent JP-S6326958-A (JP)
Title: Composite electrode substrate for fuel cell and its manufacture
Inventor: FUKUDA HIROYUKI
IPC: H01M8/02
Filed: 1986-07-18
Abstract: PURPOSE:To obtain a composite electrode substrate of phophoric acid type fuel cell having good phosphoric acid resistance by uniting the peripheral gas sealing part with a separator. CONSTITUTION:The contact surfaces between projections forming grooves of an electrode 2 and a separator are bonded via flexible carbon sheets 4. A pair of end sealing parts 3, which are parallel to reaction gas passages 6, of the electrode 2 are bonded to the extruded parts of the separator 1 via fluorine resin layers 5. Since the end sealing parts 3 are unitedly formed, peripheral sealing materials are made unnecessary and phosphoric acid resistance is increased. Since the end sealing parts 3 are uniformly arranged and bonded on both sides of the thin electrode substrate with the separator 1 interposed, reinforcing effect is increased and handling is easy. Since the flexible carbon sheets 4 placed as a buffer between bonding surfaces of the electrode 2 and the separator 1 are arranged only the bonding surface, its thickness is utilized as the effective height of projections of the electrode, and the thickness can be redueced by 7-13%.
Patent JP-S5794448-A (JP)
Title: Manufacture of high chrome ferritic stainless steel ingot
Inventor: MIHARA YASUO
IPC: C21D9/00
Filed: 1980-12-03
Abstract: PURPOSE: To prevent generation of cracks in a steel ingot at the time of blooming by solidifying an ingot of high Cr ferritic stainless steel by slow cooling and cooling under specified conditions in the same state.  
     CONSTITUTION: Molten metal of high chrome ferritic stainless steel containing 20W30% Cr is cast in a mold of mld ratio of 1.0W1.5. It is cooled slowly to 300°C ior thereabout in a heat retaining box etc. making the maximum cooling speed ≤20°C/hr without rapping and leaving it as poured in the mold. This ingot does not generate cracks at the time of blooming and slabs etc. can be manufactured at a high yield. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H0612078-A (JP)
Title: Electronic musical instrument
Inventor: MASAKI KAZUO
IPC: G10H1/00
Filed: 1992-06-26
Abstract: PURPOSE:To provide spatially spread played sounds by effectively utilizing the limited number of sounding channels at a maximum. CONSTITUTION:This electronic musical instrument is provided with a keyboard part 2 to generate key operation information, sound source circuit 4 to respectively output plural musical sound signals for respective plural sounding channels, output channels 71-74 provided less than the number of sounding channels, output channel managing memory to store information concerning the musical sound under sounding for the respective output memories 71-74, control part 1 to allocate the plural musical sound signals outputted from the plural sounding channels to any one of output channels 71-74 based on the stored contents of the output channel managing memory and new key operation information outputted from the keyboard part 2, and distribution circuit 6.
Patent JP-S6414895-A (JP)
Title: Lighting device
Inventor: KODA YOSHIHARU
IPC: H05B41/18
Filed: 1987-07-09
Abstract: PURPOSE:To simplify a wiring work with plural discharge tubes lit with a lighting device, and weight and wiring space as a lighting device decreased by providing control means in which plural switching means can be individually switched to a lighting device. CONSTITUTION:A stabilizer 2 is constantly operated by a power source 1 with the stabilizer 2 and a power source device 4 built in a microcomputer 3 as control means are connected to a AC power source 1 of a lighting device. A common line C of the stabilizer 2 is connected to an end of each switching means 5a-5h of a switching part 5. And load lines A1-A8 individually connected to other ends of switching means 5a-5h are connected to load lines B1-B8 of the stabilizer 2 via fluorescent discharge tubes L1-L8. And output terminals P1-P8 of an output port 6 in a computer 3 are connected to each input terminal of switching means 5a-5h with signal lines D1-D8, and the port 6 is operated with a control device 7.
Patent JP-S5960357-A (JP)
Title: Method for testing season cracking property of deep drawing product of austenite stainless steel sheet
Inventor: GOTOU KATSUO
IPC: G01N33/20
Filed: 1982-09-30
Abstract: PURPOSE:To test simply and quantitatively a season cracking property by evaluating the season cracking property by a product of the magnetized quantity and the hardness of a formed product. CONSTITUTION:If the Griffith's theory is applied on the assumption that the shape of martensite transformation phase is a sheet state of convex lens shape, a crack generation condition is obtained quantitatively as shown in an equation. It is found that the season cracking is caused when the product of the destructing stress sigmac2 and the hardness Hv attains the predetermined number. On the other hand, a residual stress sigma is nearly proportional to half power of magnetized quantity independently to the nickel content of austenite stainless steel. The magnetized quantity is nearly proportional to the martensite transformation quantity, thus the equation means that the product of the magnetized quantity caused by the martensite transformation and the hardness can be used to the evaluation of season cracking property. In the equation, E is the Young's modulus, gamma is the surface energy and (c) is the size of crystal grain.
Patent JP-S6414128-A (JP)
Title: Sealing composition
Inventor: NAGAHARA NARIHIRO
IPC: C03C8/24
Filed: 1987-07-09
Abstract: PURPOSE:To obtain sealing composition giving airtight sealing with high strength and consisting of PbO-B2O3 type glass frit and filler having low expansion coefft. in a fixed weight ratio. CONSTITUTION:The titled sealing composition consists of, in wt., 35-99% PbO-B2O3 type glass frit, 0-50% filler having low expansion coefft. and 15% alumina filler. The pref. amt. of the filler having low expansion coefft. is 0.1-15wt.% in the range above-mentioned, and as such filler, zircon and cordierite, etc., can be given. And the pref. amt. of the alumina filler is 5-10wt.% in the range above-mentioned and its particle size is particularly pref. to be 5-60mum. When sealing with the composition, the sealing having heat resistance is obtd. by coating a panel and funnel with the composition by an usual method, by pressing them and by causing the composition to flow by heat-treating at 440 deg.C for 40min to well wet the surface to be sealed and crystallize partly.
Patent JP-S5958352-A (JP)
Title: Gas detecting element
Inventor: NAKATANI YOSHIHIKO
IPC: G01N27/12
Filed: 1982-09-28
Abstract: PURPOSE:To provide high sensitivity to gaseous methane as well by using a compsn. contg. 0.1-50mol% tin, zirconium and titanium in total of additives respectively in terms of stannic oxide, zirconium oxide and titanium oxide as a gas sensitive element. CONSTITUTION:At least one among tin (Sn), zirconium (Zr) and titanium (Ti) are added as an additive to zinc ferrite (ZnFe2O4) contg. 0.005-10wt% sulfate ions. The compsn. contg. 0.1-50mol% said elements in total of additives respectively in terms of stannic oxide (SnO2), zirconium oxide (ZrO2) and titanium oxide (TiO2) is used as a gas sensitive element. Then the high sensitivity to gaseous mechane is obtd. even at a relatively low operating temp. of 400 deg.C without adding any noble metal catalyst at all.
Patent JP-S6324943-A (JP)
Inventor: OGAWA SHIGERU
IPC: A61F5/56
Filed: 1986-07-18
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H08338153-A (JP)
Title: Fitting method of vibration damping device
Inventor: INOUE KATSUFUMI
IPC: E04H9/02
Filed: 1995-06-14
Abstract: PURPOSE: To efficiently fit a vibration damping device in which a hanging plate fixed to an upper story of a multistory building and a rising plate standingly provided from a lower story and opposed to the above-mentioned hanging plate are provided and a space between them is filled with viscous fluid, to the specified position of the building. CONSTITUTION: A hanging plate 2 and a rising plate 3 are previously temporarily fixed so as to be integrated through a shape steel 13. This vibration control device 1 is fixed to a horizontal member 10 of an upper story by bolts 6 in an assembling yard of a construction field or the like. The horizontal member 10 of the upper story together with the vibration damping device 11 are suspended with a crane, and built in the specified position of a building. At this time, the horizontal member 11 of a lower story is already built in, temporary fixing of the vibration control device is released after fixing the horizontal member 10 of the upper story, and the rising plate 3 is brought down on the horizontal member 11 of the lower story. The rising plate 3 is fixed to the horizontal member 11 of the lower story by bolts 8 so as to complete fitting.
Patent JP-S57141955-A (JP)
Title: Integrated circuit device
Inventor: WADA TOSHIO
IPC: H01L29/78
Filed: 1981-10-23
Abstract: PURPOSE:To obtain a highly integrated and low power comsuming memory cell for the  subject device by a method wherein impurities are doubly introduced in the capacitance element section on the surface of a semiconductor, the P-N junction capacitance  is added to the capacitance located among a substrate, a reverse conductive type layer  and an electrode, and then the substrate is biased. CONSTITUTION:A P layer 102 and an oxide thick film 103, which will be adjoining the  layer 102, are selectively provided on a P type Si substrate 101, and a resist mask 105  is provided on a gate insulating film 104. A P<+> layer 106 and an N layer 107 are  formed by double implanting B and P ions of the prescribed density, electrodes 104  and 109 are selectively provided, and they are opposed each other. Then, N layers 110  and 111 are formed by heat-diffusing P. Then, the above is covered by a PSG112, an aperture is provided on the N layer 111, an Al wiring 113 is led out, and a biasing  electrode 114 is attached on the reverse side of the substrate 101. According to this constitution, as the P-N junction capacitance of both the N layer 107 and the electrode  114 is longitudinal formed in parallel to the capacitance located between the electrode  108 and the N layer 107, the occupation area is made smaller, thereby enabling to  reduce the power consumption and to perform a high-speed operation by applying a  substrate bias.