baber/WOPTO huggingface dataset:
Patent TW-377270-B (TW)
Title: High cultivating device
Inventor: YAMAMOTO KOHEI
IPC: A01G9/02
Filed: 1998-05-08
Granted: 1999-12-21
Abstract: The present invention is to provide a high cultivating device which facilitates standing operation and can reduce the use of cultivated soil, water, fertilizer etc, furthermore, the filling and removal of cultivated soil is easy, and space for transport and reception can be reduced. The high cultivating device is used for raising plant 14 by filling up cultivated soil 13 in the box-shaped cultivated soil container 12 disposed on the ground. The cultivated soil container 12 is formed by combining a plurality of L-shaped plates 12L and affixing both ends with securing members. The upper surface of the cultivated container 12 is opened, while the bottom surface has an opening 15 communicable with the floor surface 11.
Patent TW-396421-B (TW)
Title: Method for reducing source/drain junction capacitance
Inventor: JENG YUE-CHING
IPC: H01L29/78
Filed: 1998-08-07
Granted: 2000-07-01
Abstract: A method for reducing source/drain junction Capacitance is presented. After the initial source/drain arsenic ion implantation, phosphorous ion implantation slows down the steep doping gradient of the arsenic ion between the source/drain and well. It also enlarges the width of the depletion region and reduce the junction capacitance. The semiconductor operation speed is improved without affecting other characteristics of the element.
Patent TW-403698-B (TW)
Title: Molten resin strand feeding device with strand cutting apparatus
Inventor: YOON YOUNG-SOOL
IPC: B29C47/88
Filed: 1998-08-27
Granted: 2000-09-01
Abstract: A molten strand feeding device having a strand cutting apparatus is disclosed. In the device, a movable unit is placed at the upper end of a cooling trough so that it is movable linearly in a direction parallel to the nozzle surface thus improving the strand cutting effect at the very beginning of the molten strand emerging from nozzles. The cooling trough is coupled to a hinged joint at the rear center and is selectively rotatable relative to the nozzle surface so that the device is selectively changed between the horizontal and vertical types. A spring-biased strand cutting apparatus is provided at the upper end of the movable unit so that the cutting apparatus is brought into close contact with the nozzle surface and smoothly moves on the nozzle surface without giving an impact on the nozzle surface, thus improving the strand cutting effect.
Patent TW-418525-B (TW)
Title: Dynamic random access memory including a porous trench
Inventor: GRUNING ULRIKE
IPC: H01L21/8242
Filed: 1999-01-05
Granted: 2001-01-11
Abstract: A DRAM cell utilizes to form its storage capacitor a trench whose lower portion formed in a n-type substrate is etched electrochemically to provide the walls of such portion with large pores (31A). The porous walls are coated with a dielectric (26B) and the trench then filled with doped polysilicon (24A). There results a capacitor with a very large surface area and a high capacitance.
Patent TW-422733-B (TW)
Title: Flue gas treating process
Inventor: OCHI EIJI
IPC: F23J15/00
Filed: 1998-10-22
Granted: 2001-02-21
Abstract: The dust concentration of the flue gas leaving an electrostatic precipitator and introduced into an absorption tower of a desulfurizer is adjusted to a level of 100 to 500 mg/Nm<3>. At the same time, a dust slurry having a higher dust concentration is separated and withdrawn from the slurry within the aforesaid absorption tower, and then subjected to a solid-liquid separation treatment. Thus, solid matter containing dust at a high concentration is extracted  and discharged out of the system of the desulfurizer.
Patent TW-456043-B (TW)
Title: Ferroelectric memory apparatus and manufacturing method therefor
Inventor: NAKAMURA TAKASHI
IPC: H01L27/115
Filed: 1998-11-11
Granted: 2001-09-21
Abstract: Between the drain region (2) and the source region (3) of a semiconductor layer (1), a gate oxide film (4), a floating gate electrode (5), a ferroelectric layer (6), and a control gate electrode (7) are formed in sequence. Aside from a generally central portion of an active region, and between the floating gate electrode (5) and the ferroelectric layer (6), a silicon dioxide film (9) having a dielectric constant lower than that of the ferroelectric layer (6) is provided. The dielectric constant of the silicon dioxide film (9) is far lower than the dielectric constant of the ferroelectric material. At the portion with the silicon dioxide film (9), the observed capacitance is insignificant, and the capacitance of the ferroelectric layer can be smaller to increase the divided voltage that is externally added.
Patent TW-379501-B (TW)
Title: Apparatus and method for digital advertisement insertion in a bitstream
Inventor: SAFADI REEM
IPC: H04N7/16
Filed: 1999-01-27
Granted: 2000-01-11
Abstract: A system for inserting commercials into an audiovisual bit stream by providing cue commands in response to cue tones in a pre-existing analog signal, and/or in response to control signals from an uplink(/programmer/network) site or headend (/affiliate). Firmware upgrades are provided to a digital encoder to facilitate generating spliceable bit streams and generation of cue commands. This enables commercial insertion at an uplink site (/programmer/network) as well as at a cable television headend (/affiliate). The system provides functional compatibility between a digital bit stream and the analog cue tones. The cue commands are preferably carried in the transport layer of the bit stream so there is no need to decode and process several layers of the bit stream. Accordingly, a new commercial insertion capability can be added to existing uplink and headend equipment in a backward compatible manner minimizing upgrade-related expenses, yet allowing different splicing techniques to be employed depending on cost-performance tradeoffs in terms of desired post-splicing audiovisual quality.
Patent TW-510917-B (TW)
Title: Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
Inventor: KIDO TAKANORI
IPC: C09K3/14
Filed: 1999-02-24
Granted: 2002-11-21
Abstract: An abrasive composition for polishing a semiconductor device, comprising cerium oxide; a water-soluble organic compound having at least, one of -COOH, -COOMx where Mx is an atom or functional group capable to substitute for hydrogen atom to form a salt, -SO3H and -SO3My where My is an atom or functional group capable to substitute hydrogen atom to form a salt and water. Method for forming a shallow trench isolation using the abrasive composition.
Patent TW-401494-B (TW)
Title: Method of manufacturing resin spring
Inventor: MAKINO HIROKI
IPC: F16F15/04
Filed: 1999-02-24
Granted: 2000-08-11
Abstract: The object of present invention is to provide a method of manufacturing a resin spring, which has excellent adherence with internal pressure generation components and little variation in load characteristic even after use. The solution of present invention is to use the manufacturing method for resin spring having internal pressure generation components, which comprises a pre-molding process to form the pre-mold body 1 of elastomer with internal space; an insertion process of inserting the internal pressure generation components 12, 13 into the internal space of the pre-mold body 1; and a compression process of applying the external force on the pre-mold body 1 inserted into internal pressure generation components 12, 13 to generate a permanent deformation to orientate the molecular structure of permanent deformation portion.
Patent TW-562786-B (TW)
Title: Manufacturing method for a coloured zirconia based article, in particular an orange/red article, and a coloured zirconia based decorative article obtained in accordance with such method
Inventor: MICHEL BEATRICE
IPC: C04B35/64
Filed: 1999-03-09
Granted: 2003-11-21
Abstract: The invention concerns a manufacturing method for an orange/red zirconia article characterised in that it includes the following steps: forming a mixture including a zirconia powder, 3 to 20% in weight of a stabilising agent, 0.1% to 5% in weight of powders for forming a vitreous phase, including SiO2, Al2O3 and Y2O3, 0.01% to 10% in weight of a copper oxide powder (CuO); forming a second mixture including said first mixture and a binding agent; forming a green body of the article from said second mixture; sintering for at least thirty minutes at a temperature comprised between 1,350 and 1,500 DEG C in ambiant atmosphere, and annealing the desired article at a temperature comprised between 700 DEG C and 1,350 DEG C for a period of time comprised between 30 minutes and 20 hours in an inert or reducing atmosphere having an oxygen partial pressure comprised between 10<-10> and 1 atmosphere, and polishing said sintered article.
Patent TW-555587-B (TW)
Title: Process for the decarbonation of gas flows using zeolite adsorbents
Inventor: PLEE DOMINIQUE
IPC: B01D53/04
Filed: 1999-03-09
Granted: 2003-10-01
Abstract: Process for the decarbonatation of gas flows contaminated with CO2, comprising placing them in contact with an adsorbent consisting of an agglomerate of zeolite X with an Si/Al ratio of from 1 to 1.15, which is very highly exchanged with sodium, containing not more than 20% of inert binder, in order to remove at least the carbon dioxide.
Patent TW-449708-B (TW)
Title: Stock control computer system and method
Inventor: GADD RICHARD JOHN
IPC: G06Q10/00
Filed: 1999-03-15
Granted: 2001-08-11
Abstract: A stock control computer system includes a memory for storing a current stock list based on product codes. An electronic version of a store purchase receipt, including product codes for the items purchased, is sent from the store to the customer's home computer where it is used to update the current stock list by addition of products purchased. Items are deleted from the current stock list as they are disposed of by the customer, in response to an electronic indication of the corresponding product codes produced, for example, by scanning product packaging with a bar code scanner. When the customer initiates a home stock check, the current stock list is compared with a predetermined stock level and an indication of which items need replacement is produced. This indication may be displayed, printed or transmitted electronically to the store. The electronic purchase receipt may also be used to generate and update a correlation between product codes, such as bar codes, and product descriptions, this correlation also being stored in memory.
Patent TW-541273-B (TW)
Title: Device for fixing substrates
Inventor: DENZLER LUDWIG
IPC: B65G49/07
Filed: 1999-04-14
Granted: 2003-07-11
Abstract: The invention relates to a device for fixing substrates, which is used to fix substrates having inner cavity, comprising an element which can be introduced into said inner cavity. Said element also has an axially moveable inner member and an outer member which can be expanded by means of a relative movement of the members.
Patent TW-525171-B (TW)
Title: Nonvolatile semiconductor memory device
Inventor: CHOI KI-HWAN
IPC: G11C16/06
Filed: 1999-05-25
Granted: 2003-03-21
Abstract: Disclosed is a nonvolatile semiconductor memory device operated under various modes of operation which comprises a high voltage generating circuit, a word line voltage switching circuit, and a charge sharing circuit. The voltage switching circuit transfers to a row decoder circuit one of the various voltages corresponding to a selected mode of operation, and the charge sharing circuit is connected to an output node of the high voltage generating circuit. Further, when the memory device enters a program verify mode of operation from a program mode of operation, the charging sharing circuit makes a word line voltage from a program voltage to a program verify voltage without charge loss by means of charge sharing.
Patent TW-419816-B (TW)
Title: Method for forming a crown capacitor
Inventor: LU YI-CHIAN
IPC: H01L21/02
Filed: 1999-05-26
Granted: 2001-01-21
Abstract: A method for forming a bottom storage node of a capacitor for a DRAM memory cell on a substrate is disclosed. The method comprises the steps of: forming a first oxide layer on the substrate; forming a conductive contact plug in the first oxide layer, the contact plug extending down to the substrate; forming a second oxide layer over the first oxide layer and the contact plug; forming a silicon nitride layer over the second oxide layer; patterning and etching the silicon nitride layer and the second oxide layer to form a trench over the contact plug; forming a layer of rugged insitu doped polysilicon layer over the silicon nitride layer and along the walls and bottom of the trench; depositing a photoresist layer over the rugged insitu doped polysilicon layer and filling the trench; performing a first reactive ion etching step until the rugged insitu doped polysilicon layer lying on the silicon nitride layer is reached; performing a second reactive ion etching step until the rugged insitu doped polysilicon layer lying on the silicon nitride layer is removed, the second reactive ion etching step being formulated to remove the rugged insitu doped polysilicon layer faster than the photoresist layer; and performing a chemical dry etching step to smooth out the sharp corners of the rugged polysilicon layer.
Patent TW-428210-B (TW)
Title: Jig for aligning and fixing oxide cathode and method of fabrication oxide cathodes using the same
Inventor: YAMAGUCHI HIROSHI
IPC: H01J1/20
Filed: 1999-07-02
Granted: 2001-04-01
Abstract: Under a situation that a carbonate layer is coated by screen printing, it is able to provide a high precision for a plurality of oxide cathodes and the printing position, and the thickness of the carbonate layer is uniform. A plurality of oxide cathodes are aligned in an oxide cathode aligning/fixing jig which is formed in a plate shape composed of an upper member and lower member. The horizontal positions of the oxide cathodes fit in the cut holes are fixed by the upper member. The height of the upper surface of the metallic body of each of the oxide cathodes, on which a carbonate paste is to be printed, is fixed by the lower member of the jig. By performing the screen printing for the metallic bodies in a state where the upper surfaces thereon are at equal heights, and thus misalignment in printing pattern or variation in the thickness of the printed carbonate films can be suppressed. Therefore, the screen printing can be carried out for the plurality of oxide cathodes at a time at precise positions and with a uniform thickness of the carbonate layer.
Patent TW-432645-B (TW)
Title: Package structure for increasing the adhesion of encapsulation body and substrate
Inventor: CHUNG MARK
IPC: H01L23/28
Filed: 1999-07-30
Granted: 2001-05-01
Abstract: A package structure that can increase the adhesion of encapsulation body and substrate is disclosed. A substrate loads a semiconductor chip. This substrate comprises a dielectric layer whose upper surface has plural chip connection pads to electrically connect the chip. The plural chip connection pads are electrically connected to the plural solder balls on the bottom surface of the dielectric layer. A protection layer is on the upper and bottom surfaces of the substrate. The protection layer on the upper surface does not cover a pre-set region of the upper surface of the substrate, so its dielectric layer in the pre-set region is exposed on the substrate upper surface. An encapsulation body is provided on the substrate upper surface to cover the chip and joins the exposed dielectric layer by a mechanical interlock mechanism to increase the adhesion of the encapsulation body and substrate.
Patent TW-472432-B (TW)
Title: Non-contact electrical power transmission system
Inventor: ABE HIDEAKI
IPC: H01F38/14
Filed: 1999-09-22
Granted: 2002-01-11
Abstract: A non-contact electrical power transmission system is disclosed, which can provide a large supply current of uniform level at an optimum transmission efficiency. The system includes a power circuit including a power supply for providing a high frequency voltage across a power winding, and a load circuit for energizing a load. The load circuit is composed of a secondary winding, a matching capacitor, a rectifier, and a choke coil. The secondary winding is magnetically coupled to the power winding so as to generate an induced high frequency voltage and to provide a leakage inductance to the load circuit. The matching capacitor is connected across the secondary winding to be cooperative with the leakage inductance and with the secondary winding to form an oscillatory circuit which provides an oscillating voltage across the matching capacitor for generating a supply current being fed through the rectifier and the choke coil to the load. The matching capacitor is selected to have a specific capacitance such that the oscillating voltage reaches its extreme each time the inducted high frequency voltage reverses its polarity. The choke coil is connected in circuit to smoothen the supply current. Thus, the supply current of uniform level can be fed to the load, reducing a possibility of incurring a noise on the supply current, yet minimizing an impedance between the supply circuit and the load circuit for realizing an optimum efficiency of converting the high frequency voltage into the supply current.
Patent TW-516101-B (TW)
Title: Method for producing gallium nitride compound semiconductor
Inventor: LIOU JIA-CHENG
IPC: H01L21/203
Filed: 1999-09-22
Granted: 2003-01-01
Abstract: This invention relates to a method for activating a P type dopant of a gallium nitride (GaN) compound semiconductor. The temperature of an epitaxy chamber is raised to 1000 DEG C for epitaxial growth of the GaN system compound semiconductor material. Meanwhile, an ammonia gas with a flow rate of 4.0 l/min is introduced as the source of nitrogen, a hydrogen gas with a flow rate of 4.0 l/min is introduced as the carrier gas, a TMG gas with a flow rate of 40x10<SP>-6</SP> mol/min is introduced as the source of gallium, and a Cp2Mg gas with a flow rate of 2x10<SP>-6</SP> mol/min is introduced as the source of magnesium dopant. Then, at the same temperature, epitaxial growth of magnesium doped GaN is carried out. After the completion of the epitaxial growth, the temperature of the epitaxy chamber is slowly decreased to 700 DEG C in 10 minutes. During this temperature decreasing process, flow rates of the hydrogen gas and the ammonia gas are gradually decrease to zero and a nitrogen gas is gradually introduced into the epitaxy chamber. The nitrogen gas flow rate is increased from zero to 20 l/min and the temperature of the epitaxy chamber is decreased to the ambient temperature.
Patent TW-461200-B (TW)
Title: Wavelength selective device and switch and method thereby
Inventor: AUGUSTSSON TORSTEN
IPC: H04B10/25
Filed: 1999-09-29
Granted: 2001-10-21
Abstract: The present invention relates to a device for wavelength selective phase control of a signal at a predetermined wavelength (λi) in a wavelength-multiplexed optical signal, which comprises an input port (25, 105, 209,307) for inputting the wavelength-multiplexed optical signal, a splitting means (11, 101, 201, 301) for splitting the input wavelength-multiplexed optical signal into the signal at the predetermined wavelength (λi) and a signal comprising of substantially the remaining wavelengths in the multiplex, a phase control element (37, 119, 221, 315, 317) for phase control of one of the two splitted signals, a combining device (51, 103, 201, 301) for combining the splitted phase-controlled signal and the other splitted signal in order to achieve a wavelength-multiplexed wavelength selectively phase-controlled optical signal, and an output port (71, 115,213,311) for outputting the wavelength-multiplexed wavelength selectively phase-controlled optical signal. A switch comprising at least one device of said kind and a method for wavelength selective phase control are likewise comprised in the present invention.
Patent TW-500621-B (TW)
Title: Method for the recovery and reuse of unreacted carbon soot to produce an effluent stream of synthesis gas and entrained carbon soot
Inventor: JAHNKE FREDERICK C
IPC: C01B31/02
Filed: 1999-11-22
Granted: 2002-09-01
Abstract: The present invention provides a method for the recovery of elemental carbon or soot produced during the partial oxidation reaction of a hydrocarbonaceous fuel and oxygen. An effluent stream of raw synthesis gas or syngas with entrained carbon soot is produced during the partial oxidation reaction. The effluent stream is scrubbed with water to produce a stream of soot-free syngas and a stream of water contaminated with soot. The soot is removed-from the water, generally by filtration or other equivalent means to form a filter cake. Most or all of the filter cake in recycled to the gasifier to serve as a reactant.
Patent TW-508766-B (TW)
Title: Semiconductor device
Inventor: IZUKA HAJIME
IPC: H01L21/3205
Filed: 2000-01-17
Granted: 2002-11-01
Abstract: A semiconductor device in which a plurality of semiconductor chips are consolidated into one and which is provided with at least a set of rerouting wiring lines formed so as to interconnect electrodes of the respective semiconductor chips, the electrodes having a function which is common to the respective semiconductor chips, the set of rerouting wiring line having a common external connection terminal.
Patent TW-I224153-B (TW)
Title: Water treating agent for preventing corrosion and water treating method using the same
Inventor: SHIMURA YUKIMASA
IPC: C23F11/12
Filed: 2000-01-26
Granted: 2004-11-21
Abstract: A water treating agent which has a high safety and is to be used for preventing corrosion and scale formation in the feed water lines and steam generation system and for preventing corrosion in the steam condensate lines in plants, boilers and steam generators, the said water treating agent comprising volatile components capable of being transferred from aqueous phase to steam phase and to steam condensate phase and exhibiting high ability for preventing scale formation and corrosion at a lower dose even for a feed water containing carbonates and bicarbonates, together with its advantageous feature of capability of application to the feed water in a form of a single aqueous solution due to its high water-solubility, without causing separation and deposition upon dilution with water, wherein the said water treating agent comprises eugenol, isoeugenol and lactones represented by the formula (1) given below and, on requirement, a neutralizing amine and erysorbic acid or its salt, together with, if necessary, an alkali agent and/or a water-soluble polymeric compound, in which n is an integer of 4 to 9.
Patent TW-503649-B (TW)
Title: Control method for eliminating non-continuous lines in image
Inventor: CHIOU AN-DE
IPC: H04N1/64
Filed: 2000-02-25
Granted: 2002-09-21
Abstract: There is provided a control method for eliminating non-continuous lines in image, which is characterized in divide the memory into two or more than two screen storage pages. When the image data reading and writing are performed on the same page, or are so close to possibly perform on the same page, there are two methods for avoiding the possibility of continuing to read or write the same page. One is to adjust the writing page pointer, so as to read the next page after reading the image data of the page, and jump to another page, instead of continuing to write the next page, after writing the page. The other one is to adjust the reading page pointer, so as to write the next page after writing the image data of the page, and jump to another page, instead of continuing to read the next page, after reading the page.