Patent SG-11201810682P-A (SG)
Title: Dark field wafer nano-defect inspection system with a singular beam
Inventor: TIAN XINKANG
IPC: G01N21/84
Filed: 2017-05-31
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1 MEM 0 11101 HOE 010 1111 1 0 013 010 1101 0111111 OE 11110 1111 011 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\"\" WO 2017/210281 Al 07 December 2017 (07.12.2017) WIP0 I PCT (51) International Patent Classification: (74) Agent: SIGNORE, Philippe, J.C. et al.; Oblon, McClel- GO1N 21/88 (2006.01) GO1N 21/00 (2006.01) land, Maier & Neustadt, L.L.P., 1940 Duke Street, Alexan- GO1B 11/02 (2006.01) GO1N 21/84 (2006.01) dria, VA 22314 (US). (21) International Application Number: (81) Designated States (unless otherwise indicated, for every PCT/US2017/035187 kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 31 May 2017 (31.05.2017) CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (25) Filing Language: English HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, (26) Publication Language: English KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (30) Priority Data: PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, 62/344,575 02 June 2016 (02.06.2016) US SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: TOKYO ELECTRON LIMITED [JP/JP]; World Headquarters, Akasaka Biz Tower, 3-1, Akasaka 5- (84) Designated States (unless otherwise indicated, for every chome, Minato-ku, 107-6325 (JP). kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (72) Inventors; and UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, (71) Applicants Nn- US only): TIAN, Xinkang [US/US]; 43788 TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, Paso Nuez Cmn, Fremont, CA 94539 (US). MENG, Ching- EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, Ling [US/US]; 982 Cascade Drive, Sunnyvale, CA 94087 MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = (US). TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). = (54) Title: DARK FIELD WAFER NANO-DEFECT INSPECTION SYSTEM WITH A SINGULAR BEAM (57) : Provided is a method, system, and apparatus for in- = 122 124 specting a substrate. The method comprises illuminating the substrate — 1007 = with a singular laser beam, the singular laser beam forming an illu- = = minated spot on the substrate and a bright fringe at a surface of the 128 substrate, the bright fringe extending over at least a portion of the Light Source =104 illuminated spot, and detecting, by an optical detection system, scat- = 112 tered light from nano-defects present on the substrate within the illu- 120 minated spot. = = = 1118 102 1. — I 116 11 I 114 108 11 cc n ei 106 © 11 ei IN 110 1-1 FIG. 1 0 ei O [Continued on next page] WO 2017/210281 Al MIDEDIM00010101110101110010i01011010EIMOIl11110VOIS Published: — with international search report (Art. 21(3))