baber/WOPTO huggingface dataset:
Patent KR-920003409-B1 (KR)
Title: Method of producing babble mat
Inventor: HYUN HWANG-JIN
IPC: A61H9/00
Filed: 1990-03-13
Granted: 1992-04-30
Abstract: The bubble producing mat has two vinyl outer  skin  sheets  A (2) and B (4) joined together by melt-fusing  at  portions  (7,8). The A (2) sheet has a lining (1) attached to  the  sheet  by  melt fusing and perforated to have numerous pores passing  through  the outer sheet (2) whereas the other outer sheet (4) is provided with absorptive attach means (6) for attaching the mat to the water tub floor or wall. Compressed air introduced into the mat  through  an inlet (9) discharges through the pores  to  water  togenerate  air bubbles for massaging.
Patent KR-0182784-B1 (KR)
Inventor: ROWAN TIMOTHY M
IPC: H02P3/18
Filed: 1990-05-04
Granted: 1999-05-15
Abstract: 전동기를 점진적으로 제어하여 정지시키는 것과 같이 전동기 속도를 제어하는 것에 관한 것으로, 특히, 이러한 기술과 동적 제동과 싸이클링 스키핑 속도제어의 조합을 이용하여 이들 기술을 실행하기 위한 장치에 관한 것이다.
Patent KR-100214789-B1 (KR)
Inventor: TAMADA HITOSHI
IPC: C30B33/00
Filed: 1990-07-10
Granted: 1999-08-02
Abstract: 열처리 방법은 오존을 함유하는 산소 분위기에서 산화물 광학 결정을 가열함으로써 산화물 광학 결정이 고유의 광흡수성을 발휘하는 파장 대역 범위내의 광 이외의 파장 대역의 광을 갖는 산화물 광학 결정의 광흡수가 최소 가능한 범위로 감소되도록 광흡수 특성을 개선한다. 이러한 개선된 흡수 특성을 갖는 산화물 광학결정을 이용하는 광학 분리기, 광학 기록 매체, 제2고조파 발생기와 같은 광도파전파장치 및 광학 장치는 고효율로 동작한다.
Patent KR-0138261-B1 (KR)
Title: Device for continuous and automatic draining sludge, especially sewage sludge
Inventor: HUBER HANS GEORG
IPC: C02F11/125
Filed: 1990-08-01
Granted: 1998-04-30
Abstract: A continuously and automatically functioning device for the drainage of sludge treated with a flocculent, especially of sewage sludge, comprising a screw conveyor installation with a driven conveyor screw consisting of shaft (16) and helix (17) and a screen wall (18). The screw conveyor installation possesses a first cylindrical area (10) of a large diameter and gap width followed by a conical area (12) for purposes of volume reduction in the throughput direction of the sludge. Connected to the conical area (12) of the screw conveyor installation is at least one pressure area (13) which, with the diameter of the shaft (16) being constant, possesses a decreasing lead of the conveyor helix (17) at the side of the entrance, and in its final area carries a conical piece (49) placed upon the shaft (16).
Patent KR-940000154-B1 (KR)
Title: Planerizing method of inter metal layer for semiconductor device
Inventor: JONG YANG-HUI
IPC: H01L21/30
Filed: 1990-08-13
Granted: 1994-01-07
Abstract: (A) forming a metal layer for inhibiting it from etching, mediating metal, and a metal mask layer (4) sequentially after the formation of a buried metal (1) on the fixed area of the substrate, (B) spreading a photoresist film and patterning photoresist film (5) on the buried metal, (C) 1st etching the mask layer of mediating metal (4) and mediating metal (3) by using the patterned photoresist film and removing photoresist film, (D) evaporating a photoresist film on the whole surface and forming a micro-pattern on the top of the mediating buried metal (1) and removing exposed metal layer (2) for inhibiting it from etching, (E) forming an insulating layer (7) on the whole area, spreading photoresist film (8) over the insulating layer, and leveling the insulating layer (7), (F) removing the mask layer (4), and (G) evaporating the 2nd metal (9) on the whole surface of resulting material and patterning it for connection with mediating material.
Patent KR-930009476-B1 (KR)
Title: Manufacturing method of self-aligned contact in semiconductor device
Inventor: LEE WON-KYU
IPC: H01L27/108
Filed: 1990-09-22
Granted: 1993-10-04
Abstract: The method  for  manufacturing  a  self  aligned  contact  of semiconductor device  for  protecting  the  silicon  substrate  is disclosed. A thin insulating layer is formed on a first conductive layer and a sidewall spacer oxide for forming a LDD  structure  is formed on the sidewall of a gate, and a diffusion layer is formed. Then a thin silicon nitride layer used as etch stop  layer  during wet etch process is deposited. And a second  insulating  layer  is deposited on the silicon nitride. And then,  a  second  insulating layer is etched to two-thirds of thickness by  dry  etch  using  a self aligned contact mask, and the remnant of a second  insulation layer is etched by wet etch using the silicon nitride  as  a  etch stop layer. Then a contact hole  is  formed  by  dry  etching  the silicon nitride and thin first insulating layer.  Short  of  upper conductive  line  and  lower  conductive  line  is  prevented   by insulating layer remaining on the lower conductive  line  and  the stepped portion of the gate is minimized.
Patent KR-930003769-B1 (KR)
Inventor: JACKSON KEVIN
IPC: A44B1/42
Filed: 1990-11-30
Granted: 1993-05-10
Abstract: 내용 없음.
Patent KR-930011657-B1 (KR)
Inventor: NOGUCHI KAZUO
IPC: B23B51/02
Filed: 1990-12-24
Granted: 1993-12-16
Abstract: 내용 없음.
Patent KR-970000231-B1 (KR)
Inventor: BILLON-LANFREY CHRISTIAN
IPC: A22C17/14
Filed: 1989-11-07
Granted: 1997-01-08
Abstract: 내용없음.
Patent KR-960002488-B1 (KR)
Title: Process for continuous coating of wires and use of the wires obtained therefrom
Inventor: LINERT KLAUS-WILHELM
IPC: C09D179/08
Filed: 1990-01-27
Granted: 1996-02-17
Abstract: Process for coating wires with an insulating lacquer based on polyesterimide, polyester or polyurethane. The lacquer may be 1) a polyesterimide or polyester wire lacquer containing a) 2 to 20 parts by weight of electrically conductive soot or b) 50 to 110 parts by weight of graphite or c) 1 to 12 parts by weight of soot and 50 to 110 parts by weight of graphite, or 2) a polyurethane wire lacquer containing a) 5 to 50 parts by weight of electrically conductive soot or b) 2 to 40 parts by weight of graphite or c) 1 to 35 parts by weight of soot and 2 to 115 parts by weight of graphite, or 3) a polyamide-imide wire lacquer containing a) 1 to 10 parts by weight of electrically conductive soot or b) 60 to 110 parts by weight of graphite or c) 1 to 10 parts by weight of soot and 60 to 110 parts by weight of graphite, all quantities being referred to 100 parts by weight of binder.
Patent KR-960012072-B1 (KR)
Title: Wheel balancer
Inventor: KIM YUN-HYUN
IPC: G01M1/02
Filed: 1991-02-28
Granted: 1996-09-12
Abstract: The wheel balancer calculates automatically a width and a diameter of the wheel, and a distance between the wheel and a force sensor by measuring a distance between a supersonic sensor and a wheel as soon as installing the wheel. The wheel balancer comprises: the supersonic sensors(6,6a), installed at a safety cover, sending and receiving the supersonic signals; an oscillator(9) generating an oscillation signal by a control signal of a CPU(1); an supersonic oscillator(10); an AND gate(8) receiving the signals from the oscillator and the supersonic oscillator and performing the AND operation; a voltage booster(7) boosting the output signal of the AND gate; an amplifier(5) amplifying the signal of the supersonic sensor; a signal processor(4) generating a reset signal; a clock generator(3); a counter(2).
Patent KR-940007442-B1 (KR)
Inventor: MATSUTA HIDEMI
IPC: G02B1/16
Filed: 1991-03-07
Granted: 1994-08-18
Abstract: 내용 없음.
Patent KR-940006474-B1 (KR)
Title: Polyamide resin composition
Inventor: HA JAE-HYON
IPC: C08L77/00
Filed: 1991-04-19
Granted: 1994-07-20
Abstract: Polyamide resin compsn. having good impact resistance to lower temp. specially below 0 deg.C, comprises: 5-15 wt.% of ethylene-propylene-diene-rubber to be surface-treated with maleic acid anhydride, phthalic acid anhydride or mixt. of them; 10-30 wt.% of glass-reinforced fiber; and 55-85 wt.% of nylon 6. The ethylene-propylene-diene-rubber is the copolymer contg. 50-70 wt.% of ethylene and 23-47 wt.% of propylene, and contains 3-7 wt.% of double bond, and is surface-treated with 0.3-0.9 wt.% of maleic acid, phthalic acid anhydride or mixt. thereof. The obtd. resin compsn. has improved notch sensitivity, crack resistance, heat deforming resistance and stiffness.
Patent KR-100247879-B1 (KR)
Inventor: TULTS JURI
IPC: H04N5/10
Filed: 1991-04-26
Granted: 2000-03-15
Abstract: 동조 시스템은 하드웨어 타이머/카운터의 사용을 필요로 하지 않는 마이크로 컴퓨터에 기초한 동기 신호 검출기를 포함한다. 마이크로 컴퓨터(117)는 유효 동기 신호의 각각의 특성들이 발생하는지를 판정하도록 다수의 다른 평가 간격들 동안 통상의 입력/출력 포트(143)에 결합된 동기 분리기(111)의 출력 신호를 샘플링한다. 하나의 평가 간격 동안, 수형 동기 펄스들의 최대 지속 기간에 대응하는 주어진 지속 시간(예컨대, 1㎲)보다 작은 지속 시간 동안 "하이" 레벨이 존재하는 지를 판정하기 위한 테스트가 실행된다. 또 다른 평가 간격 동안, 수평 동기 펄스들 사이의 최소 분리에 대응하는 또 다른 주어진 지속 시간(예컨대, 40㎲) 보다 큰 지속 시간 동안 "로우" 레벨이 존재하는 지를 판정하기 위한 테스트가 실행된다. 샘플링 간격들 및 평가 간격들은 명령 사이클들을 실행하는데 요구되는 시간에 의해 설정된다.
Patent KR-100210564-B1 (KR)
Inventor: FRNAK CHARLS GUWIN OWEN
IPC: H04W24/00
Filed: 1991-07-20
Granted: 1999-07-15
Abstract: 핸드 오버를 촉진시키기 위해 휴대 가능한 이차국은 다른 FDM 채널을 모니터하는 n(n는 1보다 큰 정수) TDD 프레임에서 전체 1만큼 시스템에서 다른 FDM 채널의 상태 및 질기록을 형성하는 통신 시스템, 특히 FDM-TDD 무선 전화 시스템의 동작 방법에 관한 것이다. 현 채널의 질이 왜곡될 때 n값은 감소하며 n값이 적합하면 빠른 기록 갱신이 이루어진다. 
     이차국은 수용할 수 있는 선택적인 채널을 즉시 선택하여 다른 FDM 채널 전체를 주사하는 것을 방지한다.
Patent KR-910007335-B1 (KR)
Inventor: ENDO TOSHIHIKO
IPC: C08L59/00
Filed: 1991-08-07
Granted: 1991-09-25
Abstract: 내용 없음.
Patent KR-930010246-B1 (KR)
Inventor: DANIELS BRAIAN K
IPC: G03F7/004
Filed: 1991-08-09
Granted: 1993-10-15
Abstract: 내용 없음.
Patent KR-100199407-B1 (KR)
Inventor: DAVID EDWARD CHARLTON
IPC: H01S3/10
Filed: 1991-12-23
Granted: 1999-06-15
Abstract: 파장 λp의 광선을 펌핑될 경우 파장 λs에서 광선의 방출을 촉진할 수 있는  활성 도펀트 이온으로 도프된 단일-모드 코아를 가진 이득 섬유를 함유하는 광섬유 증폭기가 개시되어 있다. 파장λp의 광선을 감쇠시키나 파장 λs 는 감쇠시키지 않는 도펀트를 함유하는 코아를 가진 광선-감쇠 섬유가 상기 이득섬유에 접속되어 있다. 
     상기 증폭기는 이득섬유의 말단으로 파장 λs의 광선을 도입시키기 위해서 입력 전송 섬유를 함유하는 시스템에 통상 사용된다. 상기 시스템에는 파장 λp의 광선을 이득섬유 말단으로 유입시키기 위해 펌프원을 더 포함한다. 
     상기 시스템의 부품들은 전방펌핑, 역펌핑 및 이중 말단 펌핑용으로 배열될 수 있다. 이득섬유, 감쇠섬유 및 출력섬유를 함유하는 일련의 배열을 형성하기 위하여 다양한 연결구성이 개시되어 있다.
Patent KR-950006063-B1 (KR)
Title: Water in oul type emulsification composition
Inventor: KYONG KI-YOL
Filed: 1991-12-26
Granted: 1995-06-08
Abstract: A water in oil type emulsified composition is prepd. by dispersing continously 0.1-20 wt.% dextrin formula of fatty acid ester with oil-soluble highly polymerized compound at 80-85 deg.C and 6000-8000 rpm. In the formula, R is C15-17 alkyl and n is dextrin polymerization degree.
Patent KR-950003212-B1 (KR)
Inventor: FURUTA TAKASHI
IPC: H03M5/04
Filed: 1992-01-24
Granted: 1995-04-06
Abstract: 내용 없음.
Patent KR-950006689-B1 (KR)
Inventor: KEPPLINGER WERNER L
IPC: C21B13/02
Filed: 1992-02-18
Granted: 1995-06-21
Abstract: 내용 없음.
Patent KR-100225552-B1 (KR)
Inventor: TATSUMI TETSUYA
IPC: H01L21/3065
Filed: 1992-04-14
Granted: 1999-10-15
Abstract: 오버에칭시의 과잉래디컬의 영향에 의한 바탕에 대한 선택성과 이방성(異方性)의 열화를 방지한다. 
     ECR 포지션(11)의 하류측에 있어서 벨자(bell jar)(4)의 내벽부의 최소한 일부가 Si계 재료층(12)에 피복된 유자장마이크로파플라즈마에칭장치를 사용한다.  저스트에칭시에는 ECR 포지션(11)에 대해 웨이퍼(7)를 근접유지하고, 고밀도래디컬과 방향성이 갖추어진 이온에 의해 고속이방성에칭을 행한다.  오버에칭시에는 웨이퍼(7)를 ECR 포지션으로부터 멀리하고, 아래쪽으로 확산된 ECR 플라즈마 P와 Si계 재료층(12)과의 접촉면적을 증대시킨다.  이로써, 예를 들면 과잉 F * 는 SiF X 의 형으로 계(系)외로 제거할 수 있다.  에칭가스조성의 도중변경이 불필요하다.
Patent KR-950005592-B1 (KR)
Inventor: HIDEAKI SUGIYAMA
IPC: B65H20/36
Filed: 1992-04-15
Granted: 1995-05-27
Abstract: 내용 없음.
Patent KR-920006074-B1 (KR)
Inventor: OTSUKA NOBUO
IPC: F24F11/02
Filed: 1992-05-19
Granted: 1992-07-27
Abstract: 내용 없음.
Patent KR-950012027-B1 (KR)
Inventor: NAKAMURA TOSHIFUMI
IPC: H04N1/21
Filed: 1992-06-22
Granted: 1995-10-13
Abstract: 내용 없음.
Patent KR-950004059-B1 (KR)
Inventor: ITOH MASUMI
IPC: C03B37/018
Filed: 1992-06-23
Granted: 1995-04-25
Abstract: 내용 없음.
Patent KR-950010564-B1 (KR)
Title: Data output buffer of synchronous semiconductor memory device
Inventor: LEE MO-CHOL
IPC: G11C7/10
Filed: 1992-10-02
Granted: 1995-09-19
Abstract: The memory device performs read/write operation according to the clock supplied from an external source, and comprises: a memory means for storing a data; a data output buffer means for outputting the stored data in response to a control signal of the data output buffer; and a control signal generating means controlling the data output buffer according to an address strobe signal and a predetermined combination signal in response to a clock signal and an address strobe signal  or their combination signal. The address strobe signal is either or both a row address strobe signal and a column address strobe signal.
Patent KR-950007081-B1 (KR)
Title: Door opening alarm method
Inventor: KO SOK-HO
IPC: D06F37/42
Filed: 1992-11-10
Granted: 1995-06-30
Abstract: checking the washer on whether a course selecting key was input before the input of an operating key; operating without checking the door when the course selecting key was input and only a washing operation was selected; checking whether the door is opened or closed in case of operating the washer before elapsing a designated time after the course selecting key was input and the washing operation was selected; and alarming an abnormal state with the detection of the door's open state, and operating the washer when the door is closed within a designated time, but switching off a source power when the door is open.
Patent KR-950013567-B1 (KR)
Title: Process for the preparation of cephem derivatives
Inventor: LEE KWANG-HYOK
IPC: C07D501/48
Filed: 1992-11-27
Granted: 1995-11-09
Abstract: This relates to a manufacturing method of cephem derivatives of formula (I). The compd.. is useful as antibiotics. The manufacturing method comprises : 1)making dichlorotriphenylphosphorane by reaction of triphenylphosphine and hexachloroethanol, and reacting with 2-(2-aminothiazol-4-yl)-2-syn-methoxyiminoacetic acid and producing acyloxyphosphonium chloride of (V); 2)silylation of the compd. of (III); and 3)acylation of the compd.. (V) and silylated (III).
Patent KR-960007930-B1 (KR)
Inventor: HARDIMAN CHRISTOPHER JOHN
IPC: C08G61/06
Filed: 1991-03-20
Granted: 1996-06-17
Abstract: 내용 없음.
Patent KR-960009125-B1 (KR)
Title: Field emission device and the manufacturing method
Inventor: LEE KANG-OK
IPC: H01J1/30
Filed: 1993-01-06
Granted: 1996-07-13
Abstract: a silicon substrate (31) which is doped with high density impurity; an emitter tip (35) which is formed in a body with the substrate; a first insulating layer (3a) which is formed to surround the under part of the slope of the emitter tip and the substrate; a second insulating layer (3b) which is formed to surround the first insulating layer; a third insulating layer (3c) which is formed over the second insulating layer; a gate electrode (37)which is formed over the third insulating layer.
Patent KR-960008862-B1 (KR)
Title: Bi-cmos semiconductor device and manufacturing method thereof
Inventor: KIM KYU-CHOL
IPC: H01L27/06
Filed: 1993-02-01
Granted: 1996-07-05
Abstract: The BiCMOS semiconductor device has the feature that a first region which an input circuit region and a memory cell region are separated by an isolation region in, and comprises a n type low density buried layer (6) in the region where the components are formed; a second region comprises a p type high density buried layer (12) on the first region; a third region comprises a p type low density well layer (15) on the second region; and the structure, where a n type high density buried layer (11) and the n type low density buried layer (6) are formed to be connected each other in the left/right side of the upper side of the first region and in the left/right side of the second/the third region, are formed around the input circuit and the memory cell region.
Patent KR-960009784-B1 (KR)
Title: Scanning data confirming method of facsimile
Inventor: RYU YOUNG-IK
IPC: H04N1/00
Filed: 1993-03-26
Granted: 1996-07-24
Abstract: scanning a document to be transmitted by an external scanner to output scanning data; receiving the scanning data by a central processing unit to store it in a memory; transmitting the scanning data by the central processing unit to a printer; and receiving the scanning data by the printer to print it. The method provides book scanning function to facsimile without requiring expensive liquid crystal display.
Patent KR-950007188-B1 (KR)
Title: Magnetic induction device of unmanned moving body
Inventor: LEE IN-SOK
IPC: G05D1/02
Filed: 1993-03-30
Granted: 1995-07-03
Abstract: The apparatus processes distribution of magnetic flux generated by a base plate of a path linearly so that the cart is controlled accurately. The apparatus includes a rubber magnet(2) coated on a path, a magnetism detector(10,20) for detecting and amplifying magnetism generated by the rubber magnet, a differential amplifier(30) for amplifying the difference of the output signals of the magnetism detector(10,20) and edge detectors(40a, 40b) for detecting right and left edge of a path from output signal of the differential amplifier(30).
Patent KR-0146036-B1 (KR)
Inventor: KIM BAE-JIN
IPC: F24C7/08
Filed: 1993-05-29
Granted: 1998-08-17
Abstract: 본 발명은 전자레인지에 관한 것으로, 임의의 인가된 교류전압을 직류로 변환시키는 강압용 파워트랜스, 정류용 다이오드, 평활용 캐피시터 및 정전압 IC로 이루어진 정전원부와; 시스템 전체를 제어하며 시간측정용 타이머가 내장된 마이콤과; 상기 마이콤으로부터 데이터가 인가되어 시스템의 상태를 나타내는 표시기와; 어린이 보호기능키가 있어 마이콤에 사용자의 임의대로 전자레인지의 사용방법 등을 변경하거나 입력시키는 키패드와; 마이콤에 연결되어 설정된 암호를 입력시키는 이이피롬과; 상기 이이피롬에 저장된 암호를 지우는 제거 스위치로 구성한 전자레인지의 어린이 보호 장치로써 어린이가 어린이 보호기능을 쉽게 해제하지 못하게 하는 암호기능을 추가함으로 전자레인지의 오사용으로 인한 위험으로부터 어린이를 보호하는 효과가 있다.
Patent KR-960003382-B1 (KR)
Inventor: YODA YUDAKA
IPC: E05B83/16
Filed: 1993-06-02
Granted: 1996-03-09
Abstract: 내용 없음.
Patent KR-960013642-B1 (KR)
Title: Manufacture of capacitor storage electrode
Inventor: WOO SANG-HO
IPC: H01L27/108
Filed: 1993-06-10
Granted: 1996-10-10
Abstract: The method of manufacturing capacitor storage electrode comprises the steps of : forming a word line(5), an insulating layer(7) on a silicone substrate(1), and forming a contact hole for a storage electrode by etching some of the insulating layer(7); forming a first conductive layer(17) for a storage electrode on the insulating layer and on the contact hole, and forming insulating layers(11,13); forming a photoresist pattern(21) for a first storage electrode mask on the insulating layer, and forming an insulating layer pattern(19A) by etching the exposed insulating layer; forming a second conductive layer(23) for a storage electrode and a photoresist pattern(25) for a second storage electrode mask ; forming a hexahedral storage electrode(30) by etching the conductive layers(23,17) of the revealed region; and exposing the inside of the storage electrode(30) by wet etching the insulating layer(19A) inside the storage electrode(30).
Patent KR-100213009-B1 (KR)
Inventor: SEO JIN-KYO
IPC: H04N7/12
Filed: 1993-06-30
Granted: 1999-08-02
Abstract: 본 발명은 디지탈 영상처리장치에 있어서 보간법(Interpolation)을 이용한 잡음경감장치에 관한 것으로, 특히 1차적으로 잡음경감된 신호를 2차적으로 보간시켜 잡음을 더욱 경감시키는 보간법을 이용한 잡음경감장치에 관한 것이다. 
     이를 위하여 필드 차신호를 출력하는 제1감산기와, 프레임 차신호를 출력하는 제2감산기와, 설정된 기준에 따라 잡음여부를 판별하는 잡음판별부와, 1차적으로 잡음 경감된 신호를 출력하는 제1 가산기와, 잡음이 발생한 화소의 주위 화소들간의 보간처리하는 보간부와, 2차적으로 잡음 경감된 신호를 출력하는 제2 가산기를 구비한다. 
     따라서 잡음이 발생한 신호를 보간처리함으로써 잡음을 효율적으로 경감시킬 수 있을 뿐만 아니라 성능과 가격을 고려하여 시스템모드를 적절하게 선택할 수 있는 효과가 있다.
Patent KR-100270246-B1 (KR)
Inventor: HAZE AKIRA
IPC: C07H19/04
Filed: 1993-07-05
Granted: 2000-10-16
Abstract: 온도로 유기용매중의 뉴클레오시드 현탁액을 20℃ 이상의 온도로 유지하고, 이어서 얻어진 현탁액을 뉴클레오시드의 부인산화하는 것을 특징으로 하는 5'-뉴클레오티드의 제조방법이 개시된다. 
     본 발명에 따르면, 5'-뉴클레오티드는 단축된 반응시간으로, 고순도 및 고수율으로 뉴클레오시드로부터 5'-뉴클레오티드를 제조할 수 있으며, 뉴클레오티드 정제과정에서 불순물의 제거도 용이하게 수행된다.
Patent KR-0149186-B1 (KR)
Inventor: FUKASAWA TERUAKI
IPC: C09D11/17
Filed: 1993-07-08
Granted: 1998-10-01
Abstract: 목적 : 예사성, 점착성, 흘러내림성이 없는 수성 볼펜용 직접충전 잉크를 제공한다. 
     구성 : 염료 3~10 중량%, 보습 습윤제 10~40 중량%, 가교형 아크릴산 중합체로 이루어지는 틱소트로픽성 부여제 0.6~1.0 중량%, 수(水) 잔부로 이루어지는 수성 볼펜용 직접충전용 잉크이다.
Patent KR-970003358-B1 (KR)
Inventor: GARDENER MICHAEL J
IPC: H01R12/79
Filed: 1993-07-28
Granted: 1997-03-17
Abstract: 내용없음.
Patent KR-0160632-B1 (KR)
Inventor: YU CHUN-KEUN
IPC: H04N1/387
Filed: 1993-07-30
Granted: 1999-05-01
Abstract: 이 발명은 화상 프린트 제어장치에 관한 것으로서, 입력되는 복합영상신호를 메모리하고 모니터에 나타나는 화상을 인화지로 프린트함에 있어서, 전체 화면에서 원하는 특정 영역에 있는 화상만을 프린트하고 그 이외의 화상은 프린트되지 않도록 메모리시 특정영역에 해당하는 컷트화상의 번지를 구분하여 지정된 번지에 저장한 후, 프린할 경우 지정된 번지의 데이터만을 순차적으로 리드하여 프린트함으로써, 모니터에 나타나는 전체 화면에서 원하는 특정 영역의 화상만을 선택하여 프린트할 수 있고, 또한 선택하는 컷트화상의 크기 및 위치를 자유롭게 설정하여 프린트할 수가 있으므로 원하는 화상을 인화지로 프린트하여 영구 보존할 수 있는 칼라 비데오 프린터와 같은 화상 프린트 장치에 적용할 수가 있다.
Patent KR-960003401-B1 (KR)
Title: Life-extension method of programmable non-volatile memory
Inventor: BAEK YOUNG-SIK
IPC: G11C16/06
Filed: 1993-09-27
Granted: 1996-03-09
Abstract: using a memory in which the number of write times is limited as an area in which a real write is executed; using a random access memory as a material structure area for controlling the memory in which the number of write times is limited; assigning a head block of the random access memory, upon request of the memory, to minimize block movement during the write operation; and inserting block return into a rear portion of the random access memory.
Patent KR-960010867-B1 (KR)
Title: Method of releasing for error origination
Inventor: PARK WOO-KOO
IPC: H04Q1/20
Filed: 1993-10-11
Granted: 1996-08-10
Abstract: constituting an audit data restoration table; determining the restoration form from the audited data restoration table according to an audit number; changing an error data base to a selected initial value in the audit data restoration table, outputting an error message, and turning back to a main routine; outputting an MMC (Man Machine Communication) request message, changing the error data base to a selected MMC data, and turning back to the main routine; and selecting an algorithm in the table to output an error message and turning back to the main routine.
Patent KR-0132401-B1 (KR)
Title: Process for manufacturing a polyester fiber containing small amounts of oligomer
Inventor: LEE HAK-SOO
IPC: D01D1/00
Filed: 1993-10-18
Granted: 1998-04-16
Abstract: A fabrication method of low oligomer polyester yarn is provided to decrease a cutoff rate. The method comprises the steps of: extracting and removing a ring-shaped oligomer by dipping a polyester chip in a low boiling spot organic solvent; and melt-spinning the polyester chip. The organic solvent having low boiling spot is used a chloroform. Thereby, it is possible to easily form low oligomer polyester yarn by removing the ring-shaped oligomer.
Patent KR-960007160-B1 (KR)
Title: Gold plating method on the silver line
Inventor: YANG KWAN-SUK
IPC: B23K20/00
Filed: 1993-10-20
Granted: 1996-05-29
Abstract: A method of goldplating on the outer surface of a silver line used for accessory including the steps of thinning a gold ingot by rolling to about 0.5mm in a plate shape; winding the thin gold plate on the silver bar in which bubbles are removed and heated to 700 to 800 deg.C.; reheating the gold plate by 500 to 600 deg.C. and making the outer surface of the silver bar closely contact the inside of the gold tube; and repeatedly stretching them to a desired thickness in a drawing machine.
Patent KR-960016832-B1 (KR)
Title: A method for forming metal interconnection of semiconductor device
Inventor: KO KWANG-MAN
IPC: H01L21/3205
Filed: 1993-11-24
Granted: 1996-12-21
Abstract: an ion-implantation of the second impurity(As) on a polysilicon layer(2) doped with the first impurity(P); forming the first interfacial insulator(4) by depositing an insulating material; forming a contact hole(5) by etching the first interfacial insulator(4) partly; forming a refractory metal silicide layer(6) by depositing a Ti and RTA process; and forming a metal wiring layer(8) by depositing a metal(W) on the polysilicon layer(2).
Patent KR-950009299-B1 (KR)
Title: Washing or rinsing machines for crockery's nozzle feeler
Inventor: SHIM HYO-SON
IPC: A47L15/46
Filed: 1993-12-09
Granted: 1995-08-19
Abstract: a power supply unit for supplying power; a key input unit for inputting a key manipulated by a user; a nozzle stop sensing unit for sensing stop of a nozzle or an abnormal state at a washing motor; and a microcomputer determining a case as the stop of nozzle and non-operation of the washing motor, if no input signal from the nozzle stop sensing unit exists, and as a short-state of a motor driving unit, if the input signal exists, to thereby prevent a malfunction of a system.