baber/WOPTO huggingface dataset:
Patent TW-518809-B (TW)
Title: Shielded telecommunications connector
Inventor: SIEMON JOHN A
IPC: H01R13/658
Filed: 2000-08-05
Granted: 2003-01-21
Abstract: An exemplary embodiment of the invention is a telecommunications plug for use with a cable having a plurality of wires arranged in a plurality of pairs. The telecommunications plug includes a housing and a load bar positioned within the housing. The load bar positions wires relative to each other in the housing. An isolator is positioned in the housing and is conductive for isolating a first pair of wires from a second pair of wires.
Patent TW-452507-B (TW)
Title: Finish hot rolling process for producing steel bars
Inventor: NISHINO JUNJI
IPC: C21D7/13
Filed: 2000-08-08
Granted: 2001-09-01
Abstract: The present invention provides a finish hot rolling process for producing steel bars to increase the dimension accuracy and to obtain a uniform microstructure. In a finish hot rolling process for producing steel bars by a plurality stands of hot rolling mill having three rolls characterized in that the present invention satisfies the conditions of area reduction ratio at the final finish pass is from 10% to 20%, and a ratio of the final area reduction ratio/the preceding pass of area reduction ratio is from 0.7 to 1.3.
Patent TW-525417-B (TW)
Title: Composite through hole structure
Inventor: JANG HUEI-RU
IPC: H05K1/02
Filed: 2000-08-11
Granted: 2003-03-21
Abstract: There is provided a composite through hole structure, which is used in a carrying body. The structure comprises: a large-aperture cylindrical conductor, a small-aperture cylindrical conductor, and a middle layer. The large-aperture cylindrical conductor is extended to a first direction. The small-aperture cylindrical conductor is placed in the large-aperture cylindrical conductor and is also extended in the first direction. The middle layer is located between the large-aperture cylindrical conductor and the small-aperture cylindrical conductor, and insulating material or resistive material is filled therein. It is able to achieve the purpose of saving the area of circuit board when this composite through hole structure is used as a capacitor or a resistor. Furthermore, the composite through hole structure of the present invention can achieve the function of signal shielding.
Patent TW-452637-B (TW)
Title: Heat exchanger, its manufacture, and dehumidifier including the same
Inventor: IKE HIDETOSHI
IPC: F24F3/14
Filed: 2000-08-30
Granted: 2001-09-01
Abstract: The present invention provides a heat exchanger having an identical high heat exchange efficiency to a conventional heat exchanger for utilizing a spiral passage, and further having higher processing ability than the prior art one of such a type. Adjacent two passages are formed into a spiral configuration, spaced away from a wall surface, through which passages a fluid is flowed down for heat exchange through the wall surface. The top and bottom ends of the spiral passages are individually covered with end plates, and the spiral passage and end plates are hermetically sealed. There are provided, in an end plate, a first passage inlet opening only toward a first passage, a second passage outlet opening only to the first passage, a second passage inlet opening only to a second passage, and a second passage outlet opening only to the second passage. The inlets and outlets of the respective passages are open to respective peripheries of the spiral passage. A first fluid entering the passage from the first passage inlet passes through the first passage only by one around or less and is discharged from the first passage outlet. A second fluid entering from the second passage inlet passes through the second passage only by one around or less and is discharged from the second passage outlet. Because the fluid entering from the inlets passes through the passage only by one around or less, the pressure loss is reduced, processing amount is increased, and the processing power can be saved.
Patent TW-521166-B (TW)
Title: An optical phase shifter having an integrated planar optical waveguide and phase shifter element
Inventor: AL-HEMYARI KADHAIR
IPC: G02B6/26
Filed: 2000-11-22
Granted: 2003-02-21
Abstract: An optical phase shiner including a constant phase shift element or a variable phase shift element, each introducing a desired and predetermined phase shift into an optical signal passing through the phase shifter. The phase shifter has coaxial first and second waveguides each with a core defining an optical path, through the first waveguide and having an output facet, and which waveguides are separated from each other by a predetermined distance. The phase shift element is disposed between the waveguides and an actuator is coupled to the phase shift element for causing selective movement of the phase shift element.
Patent TW-526290-B (TW)
Title: Metal ferrule and method of producing the same
Inventor: KOHNO YOSHINARI
IPC: C25D1/02
Filed: 2000-12-28
Granted: 2003-04-01
Abstract: A dimensionally accurate small-sized metal ferrule and a method of producing the same, wherein the energy cost is low and an expensive molding machine or mold is not required. A metal ferrule having an inner diameter of 0.125 to 0.130 mm and an outer diameter of 2.0 to 3.0 mm. Further, a metal ferrule having an inner diameter of 0.125 to 0.130 mm and an outer diameter of 0.25 to 1.25 mm, and a small-sized metal ferrule having an inner diameter of 0.126 to 0.128 mm and an outer diameter of 0.25 to 0.9 mm. The metal ferrules are produced by forming a metal film on the outer surface of a metal core wire of minute outer diameter by electroforming to form a metal column of predetermined outer diameter, cutting the metal column into predetermined lengths to provide columnar blocks, thrusting a jig into the core wire end surface portion in one end surface of such column block to project the core wire out of the other end surface of the columnar block, and pulling out the core wire by gripping the projected core wire portion.
Patent TW-488088-B (TW)
Title: Light emitting diode structure
Inventor: GUO CHI-WEN
IPC: H01S5/042
Filed: 2001-01-19
Granted: 2002-05-21
Abstract: This invention provides a light emitting diode (LED) structure containing a super-lattice contact layer on a substrate. A nucleation layer is firstly formed on the substrate through a low temperature growth process and then a conductive buffer layer is formed on the nucleation layer to ensure that the subsequent crystal growth process is performed smoothly. An active layer structure is placed between the lower confinement layer and the upper confinement layer, which contains semiconductor material of doped III-V group element. The super-lattice contact layer is on the top of the upper confinement layer and a transparent electrode is on the super-lattice contact layer. An electrode keeps contact with the conductive buffer layer and is separated from the active layer structure and the transparent electrode.
Patent TW-507420-B (TW)
Title: Phase comparing circuit, PLL circuit, television broadcasting receiver, method of comparing phase and semiconductor device
Inventor: FURUYAMA KENJI
IPC: H04N5/50
Filed: 2001-02-06
Granted: 2002-10-21
Abstract: The purpose of the present invention is to provide a kind of phase comparison circuit that is capable of outputting a signal corresponding to the phase difference even when the phase difference is small. The invented phase comparison circuit has a feed forward circuit connected between a frequency phase comparator and a charge pump circuit. The feed forward circuit has a capacitor device that is connected between each Q output terminal of the flip-flops in the frequency phase comparator and the current path of the charge pump circuit. The capacitor couples the Q output terminals of the D flip-flops with the current path capacitance of the charge pump circuit so as to quickly provide the Q output voltages of the D flip-flops to the charge pump circuit. Therefore, even when the phase difference of the input signals FS and FR is small, the voltage in accordance with the phase difference is provided to a collector terminal of a transistor in the charge pump circuit. Thus, the current passing through the charge pump circuit is controlled with a high degree of accuracy in accordance with the phase difference.
Patent TW-I241582-B (TW)
Title: Method for manufacturing recording media, method for manufacturing production plate, apparatus for manufacturing recording media, and apparatus for manufacturing production plate
Inventor: KISHIMA KOICHIRO
IPC: G03F7/32
Filed: 2001-02-26
Granted: 2005-10-11
Abstract: The present invention relates to a method for manufacturing a recording medium including a process for exposing a material layer formed on a substrate composing the recording medium to a laser beam in accordance with a recording pattern, wherein the material layer has a predetermined reflectivity for the laser beam so that return light is produced for the laser beam, and a focus of a spot produced by the laser beam on the material layer is adjusted by detecting the-return light. When manufacturing a recording medium, a material layer formed on a substrate that composes the recording medium is exposed to a laser beam in accordance with a recording pattern. The material layer has a predetermined reflectivity for the laser beam so as to produce return light for the laser beam. By detecting this return light, the focusing of the laser beam on the material layer is adjusted. By doing so, a laser beam can be easily and accurately focused on a material layer during a process in which a laser beam is shone, in accordance with a recording pattern, onto a material layer formed on a recording medium or a production plate used when manufacturing a recording medium.
Patent TW-504772-B (TW)
Title: Plasma deposition method and system
Inventor: AKAHORI TAKASHI
IPC: H01J37/32
Filed: 2001-03-16
Granted: 2002-10-01
Abstract: There is provided a deposition technique wherein the amounts of eliminated F and H are small in the deposition of an insulating film, such as an SiOF film or an SiCHO film, which contains silicon, oxygen and other components and which has a lower dielectric constant than the dielectric constant of a silicon oxide film. A plasma processing system for producing plasma with the energy of a power applied between first and second electrodes which are provided in a vacuum vessel so as to face each other in parallel and which are connected to separate high-frequency power supplies, respectively, is used. An object to be processed, e.g., a semiconductor wafer is mounted on the first electrode. The frequency of the high-frequency power applied to the first electrode is set to be in the range of from 2 MHz to 9 MHz, and the frequency of the high-frequency power applied to the second electrode is set to be 50 MHz or higher, to deposit an insulating film on the wafer.
Patent TW-I231830-B (TW)
Title: A method for renewing diffusion coatings on superalloy substrates
Inventor: CHEN KENG NAM
IPC: F01D5/28
Filed: 2001-03-21
Granted: 2005-05-01
Abstract: A method for controlled removal of a portion of a diffusion coating from the outer surface of a nickel-containing superalloy article. A diffusion coating typically includes a diffusion layer (16) between an outer aluminide layer (14) and the nickel-containing substrate. The method includes contacting the coated superalloy article in a preselected chemical stripping solution for a preselected period of time sufficient to remove only the outer aluminide layer (14), without substantially affecting the diffusion layer (16) underlying the outer aluminide layer (14). After neutralizing the stripping solution, the article can be inspected and repaired as needed. The aluminide outer layer (14) can then be restored in a conventional manner.
Patent TW-I237823-B (TW)
Title: Preparation of optical disk master
Inventor: TAKAHATA HIROAKI
IPC: G11B7/26
Filed: 2001-04-10
Granted: 2005-08-11
Abstract: An optical disk master having a protrusion/depression pattern on its surface is prepared by applying a photoresist layer on a substrate, exposing the photoresist layer to radiation to form a latent image of the protrusion/depression pattern, and developing the latent image. The step of treating the photoresist layer with a surfactant is included prior to the exposing step or between the exposing and developing steps. An optical disk master having a finer pattern can be prepared at a low cost while minimizing any additional burden on the manufacturing system.
Patent TW-I284888-B (TW)
Title: Single-speed mass memory storage device with continuously variable read channel and method
Inventor: REH JEFFREY G
IPC: G06F21/00
Filed: 2001-05-03
Granted: 2007-08-01
Abstract: A mass memory storage device for reading data stored on a mass memory storage medium 22 on which the data is stored at a substantially uniform density including a support arrangement 20 configured to receive and support the medium. A drive arrangement 24 is operatively connected to the support arrangement 20 such that the drive arrangement 24 rotates the medium at a substantially constant rotational speed when the device is operated in its intended way. A read head 26 for reading the data stored on the medium is positioned adjacent to the medium with the read head being movable relative to the medium. A read channel arrangement 28 for processing the data read by the read head is operatively connected to the read head. The read channel arrangement 28 has a substantially continuously variable read channel data processing rate which varies according to the rate at which the read head reads the data from the medium. In a preferred embodiment, the device is a CD drive.
Patent TW-522475-B (TW)
Title: Method for improving chemical vapor deposition processing
Inventor: ROBERTSON ROBERT
IPC: C23C16/44
Filed: 2001-05-09
Granted: 2003-03-01
Abstract: A multi-step process is used to condition a chemical vapor deposition chamber after cleaning and between successive depositions by removing fluorine residues from the chamber with a hydrogen plasma, and subsequently depositing a solid compound in the chamber to encapsulate any particulates remaining in the chamber.
Patent TW-587017-B (TW)
Title: Electronic component, method for producing electronic component, and circuit board
Inventor: HIGUCHI SHOICHI
IPC: B32B15/04
Filed: 2001-05-16
Granted: 2004-05-11
Abstract: An electronic component includes external electrodes formed on a base member, each external electrode including a plurality of layers of which the outermost layer is a tin plating layer. The tin plating layer has a polycrystalline structure, and atoms of a metal other than tin are diffused into the tin crystal grain boundaries. Alternatively, each external electrode includes a plurality of layers including a thick-film electrode formed on the base member, a nickel layer or a nickel alloy layer formed on the thick-film electrode and a tin plating layer formed on the nickel layer or the nickel alloy layer. The tin plating layer has a polycrystalline structure and nickel atoms are diffused into the tin crystal grain boundaries. Methods for fabricating electronic components and a circuit board provided with a plurality of electronic components are also disclosed.
Patent TW-515909-B (TW)
Title: Automated protection of IC devices from EOS (electro over stress) damage due to an undesired DC transient
Inventor: JAIMSOMPORN YONG
IPC: G01R31/28
Filed: 2001-06-11
Granted: 2003-01-01
Abstract: Nodes of a test station for testing IC devices are monitored to detect for the occurrence of any undesired DC transient. The test station for testing the IC devices includes a testing board for holding the IC devices, at least one voltage supply for biasing the IC devices, and a signal driver source for providing driving signals coupled to the IC devices, during testing of the IC devices. A system for protecting the IC devices from EOS (electro over stress) damage due to the undesired DC transient includes a signal measuring unit that monitors for occurrence of an undesired DC transient at any of the at least one voltage supply, of the signal driver source, and of at least one node of the testing board. The system also includes a data processing unit and a data interface bus coupled between the signal measuring unit and the data processing unit. The signal measuring unit sends, to the data processing unit via the data interface bus, a signal of the undesired DC transient measured at any of the at least one voltage supply, of the signal driver source, and of at least one node of the testing board. The data processing unit determines whether the signal of the undesired DC transient exceeds threshold characteristics. The data processing unit includes an I/O (input/output) controller for controlling components of the test station such that the test station shuts down in a proper sequence when the signal of the undesired DC transient exceeds the threshold characteristics. The testing of the IC devices may resume after such a shutting down of the test station by resetting the test station.
Patent TW-508684-B (TW)
Title: Etch/clean process for integrated circuit pad metal
Inventor: LEARY DAVID JOSEPH
IPC: H01L21/302
Filed: 2001-06-29
Granted: 2002-11-01
Abstract: A new method of etching an opening to a bonding pad wherein corrosion is eliminated and fluorine contamination is reduced is described. A metal bonding pad is provided overlying an insulating layer on a semiconductor substrate. An anti-reflective coating (ARC) layer is deposited overlying the metal bonding pad. A passivation layer is deposited overlying the ARC layer. A hard mask layer is deposited overlying the passivation layer. A photoresist mask is formed overlying the hard mask layer having an opening where the contact opening to the metal bonding pad is to be made. The hard mask layer and passivation layer not covered by the photoresist mask are etched through, stopping at the ARC layer. Thereafter, the photoresist mask is removed and the opening is cleaned. The ARC layer protects the metal bonding pad during these steps. The ARC layer within the opening is etched away wherein the hard mask layer overlying the passivation layer prevents erosion of the passivation layer thereby preventing contamination of the metal bonding pad to complete opening a contact to a metal bonding pad in the fabrication of an integrated circuit.
Patent TW-479042-B (TW)
Title: Foldable carton
Inventor: GUO MING
IPC: B65D5/38
Filed: 2001-08-06
Granted: 2002-03-11
Abstract: A foldable carton made by folding of die-cut paper plate comprises: a body and a cover, which is characterized in that the body has a wide double-layered sidewall. The edge of the inside wall is installed with a notch and a pressed skirt. The inside wall is extended with a pressed block. The foldable carton according to the present invention has the features that the die-cut paper plate can be folded and is easy for storage, and transportation. Without the need of using an adhesive, the carton can be assembled quickly. The body and cover are beautiful and dignified with a sturdy structure, while the shape of the product can be maintained.
Patent TW-I230321-B (TW)
Title: Photosensitive coloring composition, and color filter and liquid crystal display panel using the same
Inventor: BABA KOJI
IPC: G02B5/22
Filed: 2001-08-07
Granted: 2005-04-01
Abstract: A photosensitive coloring composition comprising C.I. pigment yellow 150 which yields an extract in an amount of 1% by weight or less when subjected to extraction with tetrahydrofuran, other pigments, a solvent, a (meth)acrylic resin, a polyfunctional monomer, and a photopolymerization initiator. The photosensitive coloring composition is excellent in fluidity, anti-agglomeration property, anti-crystallization property, coloring power and the like, and, with the photosensitive coloring composition, images having superior sharpness when developed with an aqueous alkaline solution can be formed, and color filters having high uniformity, low surface coarseness and high coloring power, as well as liquid crystal display panels can be obtained steadily.
Patent TW-I271413-B (TW)
Title: Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
Inventor: SHAFFER EDWARD O II
IPC: H01L21/311
Filed: 2001-08-21
Granted: 2007-01-21
Abstract: This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.
Patent TW-556216-B (TW)
Title: Semiconductor memory device
Inventor: TAKASHIMA DAISABURO
IPC: G11C14/00
Filed: 2001-08-31
Granted: 2003-10-01
Abstract: A dummy cell circuit, used in semiconductor memory capable of high-speed operation without inviting enlargement of the chip size even when using a paraelectric capacitor, includes at least one paraelectric capacitor and have a specific relation between potentials applied to its terminals. For example, in a standby mode, a first terminal of the paraelectric capacitor is pre-charged to a first potential higher than ground potential whereas a second terminal of the paraelectric capacitor is pre-charged to ground potential. In an active mode, the first terminal is connected to one of paired bit lines, which is a reference bit line to which data is not read-out from memory cell, and the second terminal is raised from ground potential to a second potential higher than ground potential.
Patent TW-502341-B (TW)
Title: Method for preventing nitrogen contamination in silicon ions implantation
Inventor: YE SHU-YOU
IPC: H01L21/425
Filed: 2001-09-10
Granted: 2002-09-11
Abstract: A method for preventing contamination of N2+ molecules during silicon ion implantation comprises at least: increasing the current of source magnet during silicon ion implantation to dissociate N2 into N+. As a preferable example, it is necessary for the ratio of N2+/N+ to be less than 1, and an energy analyzer is used to select silicon ions to perform silicon ion implantation.
Patent TW-544692-B (TW)
Title: Boiling water type nuclear reactor use control rod
Inventor: NAKAYAMA MICHIO
IPC: G21C7/113
Filed: 2001-09-12
Granted: 2003-08-01
Abstract: In order to provide a boiling water type nuclear reactor use control rod with a guide use roller which improves corrosive environment at a clearance in the guide use roller and suppresses a generation of stress corrosion cracking while maintaining sliding function of the control rod by the guide use roller, at least one of a handle 5, a lower portion supporting plate 2a and a dropping speed limiter 2 is provided with the guide use roller, and a space which causes water flow in a clearance between a pin 9 and a pin hole 12 in the guide use roller is provided adjacent the clearance.
Patent TW-I247580-B (TW)
Title: Deltamethrin containing water-dispersible granules
Inventor: NOEDING GUNNAR
IPC: A01N53/00
Filed: 2001-09-25
Granted: 2006-01-21
Abstract: The invention relates to the formulation of deltamethrin as water-dispersible granules which comprise wetting agents, dispersants, solid inert substances and one or more acids in an amount sufficient to adjust the pH of the mixture to a value in the range from 1 to 7. The granules are particularly useful for controlling animal pests.