baber/WOPTO huggingface dataset:
Patent TW-513460-B (TW)
Title: Polymeric positive temperature coefficient composition
Inventor: JU FU-HUA
IPC: C08K3/04
Filed: 1998-09-01
Granted: 2002-12-11
Abstract: This invention provides a polymeric positive temperature coefficient composition, which has a volumetric resistivity smaller than 1.2 ohm-cm and has a steep and considerably high jump resistivity (ρp/ρ20 > 10<SP>5</SP>) within an extremely short temperature range. The composition consists of a polyethylene matrix with a high crystallinity and a conductive carbon black mixture dispersed in the matrix; there are two combinations with different physical properties including one conductive carbon black with a larger particle size, small surface area and low degree of oil-absorption while the carbon black with a smaller particle size, large surface area and a high degree of oil-absorption.
Patent TW-392272-B (TW)
Title: Carrier for carrying a nonpackage chip to be tested
Inventor: HAN CHAN-MIN
IPC: G01R31/28
Filed: 1998-09-05
Granted: 2000-06-01
Abstract: A carrier for carrying a nonpackage semiconductor chip to be tested and being mounted in a chip test socket is disclosed. The carrier comprises a body having at its one surface a cavity for receiving the chip; contact elements including inner contact elements and outer contact elements, and a fixing means, which is provided at one surface of the body, for holding the chip in the cavity, and the carrier has an apparent configuration compatible with the test socket so that the outer contact elements can be electrically connected to the socket leads. It allows a large scaled production of known good die by using a conventional semiconductor device equipment.
Patent TW-402667-B (TW)
Title: Pump impeller
Inventor: ARBEUS ULF
IPC: F04D7/04
Filed: 1998-09-16
Granted: 2000-08-21
Abstract: The invention concerns a pump impeller of a centrifugal- or a half axial type meant to pump liquids, mainly sewage water. According to the invention, the pump impeller comprises a hub (4) provided with one or several vanes (5) the leading edges (6) of which being strongly swept backwards. The periphery (8) of the leading edge is displaced 125-195 degrees relative to its connection (7) to the hub (4).
Patent TW-385468-B (TW)
Title: Field emission device
Inventor: MASAHARU TOMITA
IPC: H01J3/02
Filed: 1998-10-02
Granted: 2000-03-21
Abstract: ower layer of the insulating layer 12. The gate electrode 6 is electrically connected to the connection 7 through a contact hole and the gate electrode line 2 is electrically connected to the connection 7 through a contact hole 5b.
Patent TW-417258-B (TW)
Title: Semiconductor device
Inventor: NISHIKUBO YASUHIKO
IPC: H01L27/04
Filed: 1998-10-22
Granted: 2001-01-01
Abstract: The present invention relates to a semiconductor device which is to make the delaying wiring on the molding base being the barrier of high speed processing to efficiently employ the positioning and the performance of each component of each semiconductor device. This can achieve high speed processing for the electronic machine system carrying such system components. In order to accomplish this object, the silicon chip 1 is configured with the connection terminal composed of the main circuits 1001 to 1003, external wiring 11 to 14 gathering at the integrated circuit, and the bonding pad 11a to 13a, 11b to 13b connected with the external wiring.
Patent TW-385362-B (TW)
Title: Computer-aided image analysis distance measuring system
Inventor: LIN GU-CHIN
IPC: G01B11/00
Filed: 1998-11-27
Granted: 2000-03-21
Abstract: The invention relates to a kind of computer-aided image analysis distance measuring system which can employ CCD camera or camera to capture an image of the object whose distance is to be measured and after signal processing and computer analysis, it can calculate the image area of object and the non-factored area modulus and associate with the estimated CCD lens slope and biased characteristic parameter values from previous calibrated by the cameraman that it can measure the distance from the object to the CCD or a specified reference plane so as to provide the economical application of combination of automatic location and positioning monitoring system.
Patent TW-475950-B (TW)
Title: Printed circuit manufacturing process using tin-nickel plating
Inventor: STERN THEODORE R
IPC: H05K3/10
Filed: 1998-12-15
Granted: 2002-02-11
Abstract: A process for manufacturing a printed circuit that replaces tin and/or tin-lead electroplating with tin-nickel based electroplating. The process includes printing a desired circuitry pattern onto a resist-coated copper-clad substrate. A tin-nickel material is electroplated onto the desired circuitry pattern, and the resist removed. The tin-nickel electroplating takes place within a bath comprised of a nickel source, a stannous source and a starter solution including a bifluoride salt, diethylenetriamine and triethylenetetramine.
Patent TW-417169-B (TW)
Title: Position calibration of the wafer edge exposure
Inventor: JIANG WEN-JUNG
IPC: H01L21/027
Filed: 1999-01-06
Granted: 2001-01-01
Abstract: This invention is about the method of position calibration for the wafer edge exposure, in which a wafer that has the defined constant scale pattern is used. At first, four patterns are well defined on four sides of the perpendicular coordinates on the wafer. Four directional scales are also defined on each pattern. The scales are arranged similar to trapezoid matrix and have constant distance. From the matrix scales of these four directions, when the wafer edge exposure machine is somewhat changed and the exposure position is shifted, the deviations of position shift in x direction and <theta> direction can be directly read out from the scales of these four directions so as to perform the adjustment and calibration of the machine.
Patent TW-401724-B (TW)
Title: Wiring board, semiconductor, electronic device, and circuit board for electronic parts
Inventor: KUMAKURA TOYOHIKO
IPC: H05K1/02
Filed: 1999-01-26
Granted: 2000-08-11
Abstract: There are provided a wiring board, wherein a predetermined wiring section is disposed on an insulation board, and an electromagnetic shielding film is placed at a position close to the wiring section; a semiconductor device, wherein an electromagnetic shielding film is disposed on a surface, on which an integrated circuit of a semiconductor chip has been formed, through an insulative film, a lead is provided on the electromagnetic shielding film through an insulative film, the lead is electrically connected to an external terminal of the semiconductor chip, and the resulting structured material is sealed with a sealing material; and a circuit board for electronic parts composed of a circuit board prepared by forming a plurality of leads on an insulating material, and a conductor disposed on the plurality of leads through an insulating material and reducing a self inductance of the plurality of leads by flowing an eddy current through the conductor. Thus, a technology by which reduction in an inductance of a wiring section disposed in a usual wiring board or that of wiring leads placed in a semiconductor package as well as reduction of inductive cross talk can be achieved. Furthermore, a circuit board for electronic parts by which its characteristic impedance can be easily adjusted in even a field of digital circuits which have been fabricated in an extraordinary number is obtained.
Patent TW-451402-B (TW)
Title: Manufacturing method of inter-metal dielectric layer
Inventor: LI JUNG-SHIUNG
IPC: H01L21/768
Filed: 1999-04-19
Granted: 2001-08-21
Abstract: This invention is about the manufacturing method of inter-metal dielectric layer. The first dielectric layer with a thickness is filled into the opening among the conduction wires such that the upper surface of the first dielectric layer is lower than the upper surfaces of the conduction wires. Then, the spacers are formed on the sidewalls of the conduction wires. After that, the first dielectric layer is stripped off so as to expose the bottom portion of spacer. In addition, a separation distance is formed between the bottom portion of spacer and the bottom portion of the opening. The second dielectric layer is continuously deposited on the conduction wires.
Patent TW-483869-B (TW)
Title: Multiple column nitrogen generators with oxygen coproduction
Inventor: FIDKOWSKI ZBIGNIEW TADEUSZ
IPC: F25J3/04
Filed: 1999-05-27
Granted: 2002-04-21
Abstract: The present invention is an improvement to a nitrogen generator enabling the process to efficiently coproduce oxygen with low recovery, typically less than 70% and preferably less than 55%, in addition to the primary product, nitrogen. In the nitrogen generator process, air is distilled in a distillation column system having a higher pressure column and a lower pressure column. The feed air is compressed, treated to remove water and carbon dioxide, cooled to near its dew point and fed to the higher pressure column of the distillation column system. The nitrogen product is produced by removing an overhead vapor stream from at least one of the columns of the distillation column system. At least one oxygen-enriched stream is removed from the lower pressure column. The improvement is characterized in that: (a) the oxygen-enriched stream is removed from the lower pressure column at a location that is at or below the feed to the lower pressure column; (b) feeding the removed oxygen-enriched stream to a supplemental distillation column for separation into an oxygen bottoms and a waste overhead; (c) providing boilup to the supplemental distillation column and (d) removing an oxygen stream (vapor or liquid) from the bottom of the supplemental distillation column as an oxygen product.
Patent TW-513309-B (TW)
Title: Powder-based solid cosmetic composition and preparation process thereof
Inventor: KASHIMOTO AKIO
IPC: A61K8/895
Filed: 1999-06-30
Granted: 2002-12-11
Abstract: A powder-based solid cosmetic composition is provided having a hardness not greater than 75 as measured by an Asker hardness tester type C1L, a porosity of at least 0.4 and an impact resistance of at least 5. A process is also provided for making the powder-based solid cosmetic composition. The composition according to the present invention has excellent skin feel upon use and is not easily broken.
Patent TW-449932-B (TW)
Title: Low temperature formation of backside ohmic contacts for vertical devices
Inventor: SLATER DAVID B JR
IPC: H01S5/042
Filed: 1999-09-16
Granted: 2001-08-11
Abstract: The invention comprises a method for forming a metal-semiconductor ohmic contact for use in a semiconductor device having a plurality of epitaxial layers wherein the ohmic contact is preferably formed after deposition of the epitaxial layers. The invention also comprises a semiconductor device comprising a plurality of epitaxial layers and an ohmic contact.
Patent TW-506999-B (TW)
Title: Adhesive composition for metal foil, and adhesive-coated metal foil, metal-clad laminate and related materials using the same
Inventor: KUMAKURA TOSHIHISA
IPC: B32B7/12
Filed: 1999-09-23
Granted: 2002-10-21
Abstract: Disclosed are an adhesive composition for a metal foil which comprises a material wherein a tracking resistance test is carried out according to the IEC method by making a thickness of an adhesive layer 30 to 40 μm, using a copper foil pattern with a width of 4 mm and making a distance between electrodes 0.4 mm, then the adhesive layer dissolves out for the first time when 5 drops or more of an electrolyte are dropped thereon, an adhesive-coated metal foil, a metal-clad laminate, a wiring board, a multi-layer board and a multi-layer wiring board using the same.
Patent TW-486523-B (TW)
Title: Aluminum alloy fin stock and its preparation
Inventor: JIN ILJOON
IPC: B22D11/12
Filed: 1999-11-26
Granted: 2002-05-11
Abstract: An improved aluminum alloy fin stock is described having both a high strength and a high thermal conductivity. The fin stock contains 1.2-1.8% Fe, 0.7-0.95% Si, 0.3-0.5% Mn, and the balance A1, and is produced by continuously strip casting the alloy at a cooling rate greater than 10 DEG C/sec., cold rolling the re-roll sheet to an intermediate gauge, annealing the sheet and cold rolling the sheet to final gauge. This fin stock has a conductivity after brazing of greater than 49.0% IACS.
Patent TW-530165-B (TW)
Title: Color filter and process for producing the same
Inventor: OKABE MASATO
IPC: G03F7/004
Filed: 1999-12-07
Granted: 2003-05-01
Abstract: There is provided a color filter which comprises a transparent substrate, a picture element part provided on the transparent substrate by the predetermined pattern of a plurality of colors with an ink jet system, a shading part provided on a border part of this picture element part, and a wettability-variable layer, in which the wettability can be changed, provided for forming the picture element part or the picture element part and the shading part.
Patent TW-438636-B (TW)
Title: Embedding type extruding method for aluminum alloy
Inventor: JAU CHUAN-JIA
IPC: B21C23/08
Filed: 2000-02-14
Granted: 2001-06-07
Abstract: This invention is related to an embedding type extruding method for aluminum alloy, mainly using the combination of plural sets of embedding type male molds and female molds that are embedded within a mold base, so as to be implemented in extruding machines, where a more evenly distributed pressure is obtained while being conveyed in the forming cavities of the male and female molds under the same pressure. The final products can be manufactured in an efficient, economic manner, with high precision and improved quality, so as to provide industrial applicability.
Patent TW-494683-B (TW)
Title: Receiving device for receiving teletext information, having means for autonomously determining an appropriate character set
Inventor: GSCHWANTNER GUNTER
IPC: H04N5/91
Filed: 2000-02-15
Granted: 2002-07-11
Abstract: In a receiving device (17) for receiving a television signal (FS2, FS3) which contains character codes (CC) and additional information (CI, NI, UCSI) in VBI lines, having character set storage means (22) for the storage of character codes (CC) and associated reproducible character information (CHI) of a character set and a plurality of character sub-sets, and having VBI read-out means (27) for reading out character codes (CC) and additional information (CI, NI, UCSI) contained in VBI lines of a received television signal (FS2, FS3), and having detection means (20) for the detection of character sub-set information (UCSI) contained in read-out additional information (CI, NI, UCSI), which character sub-set information identifies the character sub-set to be used for the decoding of read-out character codes (CC), and having display signal generating means (21) adapted to generate a display signal (AS) which contains reproducible character information (CHI), taking into account received character sub-set information (UCSI), the character set storage means (22) are now adapted to store character codes (CC) and associated reproducible character information (CHI) of at least two character sets and a plurality of character sub-sets of each character set, and the detection means (20) are, in addition, adapted to detect program source information (NI) or country information (CI) contained in read-out additional information (CI, NI, UCSI) and to supply character set information (CSI) which identifies the character set to be used for the decoding of read- out character codes (CC).
Patent TW-451333-B (TW)
Title: Equipment to process the wafers
Inventor: HEINEMANN BERNHARD
IPC: H01L21/00
Filed: 2000-09-25
Granted: 2001-08-21
Abstract: This invention relates to an equipment to process the wafers with an arrangement of manufacturing-units (1) in a clean-room (2) as well as with a supply-system to supply or remove the operation-materials for the manufacturing-units (1). The supply-system has some 1st supply-pipes (7a) and removal-pipes (8a), in which the operation materials, which are more heavy than the surrounding atmosphere, are moved from up-sides towards low-sides; some 2nd supply-pipes (7b) and removal-pipes (8b), in which the lighter operation-materials are moved from low-sides towards up-sides.
Patent TW-479367-B (TW)
Title: Semiconductor thin film forming system
Inventor: TANABE HIROSHI
IPC: H01L21/336
Filed: 2000-07-07
Granted: 2002-03-11
Abstract: The present invention relates to a semiconductor thin film forming system for improving a predetermined region of a semiconductor thin film by exposing said semiconductor thin film to the projected light patterned through an exposure pattern formed on a photo mask. The, system includes a mechanism (opt20') for uniformizing the light for exposure in a predetermined area of the film. This system can provide a crystallized silicon film having a trap state density less than 10<SP>12</SP> cm<SP>-2</SP>.
Patent TW-466587-B (TW)
Title: Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
Inventor: KIM YONG-IL
IPC: C30B25/12
Filed: 2000-07-10
Granted: 2001-12-01
Abstract: The present invention provides an apparatus for deposition of thin films on wafers within a reaction chamber. The apparatus has a susceptor, a gas supplying device, a susceptor drive unit, a vacuum pumping unit, and a heating unit. The susceptor provided within the reaction chamber holds the wafers thereon in a way such that reaction surfaces of the wafers are exposed to the interior of the reaction chamber. A gas supply unit supplies reaction gases to the reaction surfaces of the wafers within the reaction chamber. The susceptor drive unit rotates the susceptor at a predetermined rotation angle, and moves the susceptor between a reacted position and an unreacted position. A vacuum pumping unit maintains pressure of the reaction gases within the reaction chamber at a predetermined pressure. A heating unit heats at least one of the reaction surfaces of the wafers and the reaction chamber at a constant temperature.
Patent TW-483125-B (TW)
Title: Thin floating gate and conductive select gate in situ doped
Inventor: AU KENNETH WO-WAI
IPC: H01L21/8247
Filed: 2000-07-13
Granted: 2002-04-11
Abstract: In one embodiment, the present invention relates to a method of forming a NAND type flash memory device, involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a flash memory cell area and a select gate area; removing a portion of the first oxide layer in the flash memory cell area of the substrate; growing a second oxide layer over at least a portion of the substrate in the flash memory cell area and over at least a portion of the a first oxide layer in the select gate area; depositing a first in situ doped amorphous silicon layer over at least a portion of the second oxide layer, the first in situ doped amorphous silicon layer having a thickness from about 400 Å to about 1,000 Å; depositing a dielectric layer over at least a portion of the first in situ doped amorphous silicon layer; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer; and forming a flash memory cell in the flash memory cell area of the substrate and a select gate transistor in the select gate area substrate, the flash memory cell comprising the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer, and the select gate transistor comprising the first oxide layer, second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer.
Patent TW-468054-B (TW)
Title: Variable focal length lens system
Inventor: OHTAKE MOTOYUKI
IPC: G02B15/22
Filed: 2000-08-09
Granted: 2001-12-11
Abstract: The subject of the present invention is to provide a variable focal length lens system with a simplified lens barrel structure, and high performance variable power. To provide a solution, there are provided three lens groups, in an order from an object side, G1, G2, and G3. When the lens group positions are changed from a wide-angle end state to a telephoto end state, each lens group moves from a state focused at infinity to a state focused at near object, in an order from a state focused at infinity in the wide-angle end state to a state focused at near object in the telephoto end state, and the focal length gradually varies to be a near distance. G2 has an aperture diaphragm S, and lens elements are arranged to both object and image side of the aperture diaphragm S. When the lens group positions are changed from the wide-angle end state to the telephoto end state, G1 and G2 move such that a moving ratio of G2 to G1 is always same, and G3 moves such that a space between G2 and G3 increases when a focusing state in a predetermined focal length changes from infinity to near object, and the space decreases when a focusing state and a focal length state change from near object in the predetermined focal length state to infinity in the next focal length state.
Patent TW-486614-B (TW)
Title: Method and device for teaching stocking robot, and recording media
Inventor: YASUDA KATSUMI
IPC: H01L21/677
Filed: 2000-08-16
Granted: 2002-05-11
Abstract: The object of the present invention is to provide a method and a device for teaching robot for storage, and a storage medium to prevent the degradation of detection accuracy or falling into an undetectable state even when a mark position of each storing portion is detected by radio, without removing works in a storing portion when the coordinate position of each storing portion is automatically taught. The method for teaching a positioning coordinate for each storing portion 2a to a storage robot comprises a hand portion 11 having a first attitude of running along a plurality of storing portions 2a of a storing shelf 2 and a second attitude of moving toward the positioning coordinate for each storing portion 2a and handling the work 3; a marking means 15 provided for each storing portion 2a so that the relation between it and the positioning coordinate is constant, and a position detecting means 30 located at the hand portion 11 of the first attitude for detecting a positional relation with the marking means 15, so that the hand portion 11 of the first attitude is moved to the positioning coordinate for each storing portion 2a, and the position detecting means detects a mark coordinate of the marking means 15 and calculates the positioning coordinate for each storing portion.
Patent TW-I233513-B (TW)
Title: Liquid crystal display device and method of producing the same
Inventor: MIYASHITA HIROSHI
IPC: G02F1/1333
Filed: 2000-08-17
Granted: 2005-06-01
Abstract: In an active matrix type display device, an insulating film pattern (4) is formed between scanning lines and/or between signal lines (2). An upper insulating film (5) is formed on the insulating film pattern (4) and the lines (2) and in spaces between the insulating film patterns (4) and the lines (2) so that the upper insulating film (5) has a continuous top surface at a substantially same level. For further improvement in flatness and adjustment in film thickness of the upper insulating film (5), the whole surface of the upper insulating film (5) is etched back. After that, pixel electrodes (3) are formed on the upper insulating film (5).