baber/WOPTO huggingface dataset:
Patent TW-353712-B (TW)
Title: Method for replacement of existing pipes and devices for carrying out the method
Inventor: TOSHIO AKESAKA
IPC: F16L55/165
Filed: 1998-04-16
Granted: 1999-03-01
Abstract: A method for replacement of existing pipes buried in the ground with new pipes comprising the steps of: inserting cutting means including cutter bodies into the inside of existing pipes, in which the cutter bodies are arranged at angular intervales in the circumferential direction and each of the cutter body has cutting edges arranged in a line and positioned in such a manner that distances between the respective cutting edges and the center of the circle become larger in order from the forward side toward the backward side of the cutting means; traveling the cutter means from the forward side toward the backward side of the existing pipes in the existing pipes, thereby forming a plurality of grooves running in the axial direction of the existing pipe, and traveling, following the cutting means, a plurality of expanding rollers which are arranged at axial intervals and positioned between cutter bodies being adjacent to each other in the circumferential direction, thereby splitting, starting from the grooves, the existing pipes into a plurality of arc-shaped pieces continuing in the longitudinal direction and pressing the arc-shaped pieces into the ground while deflecting them within the limit of elasticity of material of existing pipes in such a direction that distances between the respective arc-shaped pieces and the center of the existing pipes can be made larger from the forward side toward the backward side of the existing pipes, by which a space surrounded by the arc-shaped pieces and portions of consolidated ground can be formed; and introducing new pipes into the spaces, by which the new pipes can be buried while protective armors formed of the arc-shaped pieces are arranged around the buried new pipes.
Patent TW-403960-B (TW)
Title: Method for manufacturing a sidewall for a semiconductor gate electrode
Inventor: JENG MING-JR
IPC: H01L21/3065
Filed: 1998-05-15
Granted: 2000-09-01
Abstract: A method for manufacturing a sidewall for a semiconductor gate electrode: Firstly, form a gate oxide layer and a polysilicon layer, and then use the photolithography and plasma etching technologies to etch the foregoing polysilicon layer and gate oxide layer to define the gate electrode pattern. Then deposit a dielectric layer on the entire semiconductor substrate surface, and finally, proceed with a unidirectional plasma etching to form a sidewall with appropriate thickness on both side of said gate electrode. Such unidirectional plasma etching step is the characteristic of the present invention, and the mentioned unidirectional etch back includes ordinary plasma reacting gas as well as an additional magnetic filed, such that the thickness of the sidewall can be effectively controlled by appropriately selecting the strength of the magnetic field.
Patent TW-494357-B (TW)
Title: Apparatus and method for scheduling and dispatching queued client requests within a server in a client/server computer system
Inventor: FREUND THOMAS
IPC: G06F9/48
Filed: 1998-06-06
Granted: 2002-07-11
Abstract: An apparatus for scheduling and dispatching client: requests for execution by a server object in a heterogeneous object-oriented client/server computing environment, the apparatus comprising: a request- holding buffer having an input connected to a communications channel which channels the client requests to the apparatus, and an output; a plurality of parallel execution threads connected to the output of the buffer; and a scheduling means for distributing client requests stored in the buffer to the plurality of execution threads, characterized in that: the scheduling means places client requests held in the buffer in priority order based on a priority determining rule which takes into account the state of the plurality of execution threads and the nature of each of the held requests.
Patent TW-367415-B (TW)
Title: Test method for ball grid array integrated circuit
Inventor: Liu hong-min
IPC: G01R31/28
Filed: 1998-06-18
Granted: 1999-08-21
Abstract: The invention relates to a test method for ball grid array integrated circuit which employs the ball grid array integrated circuit without the solder balls during the burn-in testing and make the test probe directly contact with the joints on the ball grid array integrated circuit substrate for the testing. And, before the solder balls attaching the ball grid array integrated circuit substrate, employs the hydrogen to wash the ball grid array integrated circuit substrate.
Patent TW-387117-B (TW)
Title: Semiconductor package with increased heat sinking
Inventor: WANG SHING-SHENG
IPC: H01L21/60
Filed: 1998-07-02
Granted: 2000-04-11
Abstract: This invention comprises a substrate, a chip and a signal transmission device to electrical connection between the substrate and the chip. The  BGA is for external signal connection. Among  the chip, substrate and a heat sink, insulating package is used as cover. The heat sink has a support on the corner and protrudes under the surface of the metal board to make a good connection with substrate. The substrate includes an island position to place those chips. A power source circle is produced surrounding the island position to input power. An  ground circle is surrounded the power source circle. The ground circle has plural spacer to connect the support of the heat sink.
Patent TW-424049-B (TW)
Title: Method for manufacturing heat-resistant and non-slippery paper cups
Inventor: HE WEN-JEN
IPC: B31D5/00
Filed: 1998-08-21
Granted: 2001-03-01
Abstract: This invention is related to a method for manufacturing heat-resistant and non-slippery paper cups, in particular to that is attached with spot-like embosses at the outer periphery of the paper cups so as to insulate heat conduction and to prevent slipping. The method for manufacturing heat-resistant and non-slip paper cups of this invention comprises the steps of: attaching a layer of heat-resistant, non-toxic waterproof adhesive film on both faces of the of the paper; after rolling and drying, applying glue to the paper to form a paper cup; inserting and sealing a rigid stuffing with a smooth exterior into the paper cup; passing the paper cup through a heater just adapted to contain the paper cup; baking the paper cup for a short time and removing the paper cup to allow heat dissipation. Thus a heat-resistant and non-slippery paper cup within a coarse exterior and a smooth interior is produced.
Patent TW-503262-B (TW)
Title: Resistive heating of powered coil to reduce transient heating/start up effects
Inventor: VAN GOGH JAMES
IPC: H01L21/3065
Filed: 1998-09-14
Granted: 2002-09-21
Abstract: A method and apparatus for pre-heating a coil used to generate a plasma field in a processing chamber in a semiconductor fabrication system. The coil is pre-heated in the chamber prior to sputter depositing material onto a substrate and workpiece. The coil is pre-heated to a predetermined temperature, which is preferably equal to or greater than the equilibrium temperature attained by the coil during sputter deposition processes. Pre-heating may be effected with a preheating current having a frequency lower than the minimum frequency required to ignite a plasma, or when the processing chamber contains an atmosphere which prevents formation of a plasma. The coil may pre-heated for a predetermined time period.
Patent TW-404867-B (TW)
Title: Process and appliance for producing slabs
Inventor: URLAU ULRICH
IPC: B22D11/18
Filed: 1998-10-20
Granted: 2000-09-11
Abstract: The invention relates to a method for producing slabs having a thickness D of > 100 mm at casting speeds v < 3m/min. in a continuous casting installation, in which melt is fed to a casting die from a container by means of a submerged nozzle, from which a casting cup encompassing a crater is drawn out into a strand guide frame on the mouth side, specially a bow-type continuous casting machine. According to the invention the fed melt enters the casting die at a speed (vK) which, in relation to the strand draw-out speed VB, is vk : vB = 6 : 1 - 60 : 1 and the flow filaments of the fed melt are guided in such a way that they penetrate the crater at a depth L < 2 m in relation to the melt level in the form of a large face with a rectangular profiled cross-section. The invention also relates to a device for producing slabs.
Patent TW-388809-B (TW)
Title: Method and machine of forming radiating fin, and product thereof
Inventor: CHEN YU-SHAN
IPC: G06F1/20
Filed: 1998-11-17
Granted: 2000-05-01
Abstract: A method of forming radiating fin comprises the steps of: providing a flat metal plate; Clamping the top and bottom of the metal plate by a first, a second, and a third pair of forming clamps which are spaced at a predetermined distance, wherein the lower clamping head of the second pair of forming clamps having a sharp top end against bottom of metal plate; Moving the second clamp and the third clamp toward the first clamp into a first position where the portions of the metal plate between the first clamp and the second clamp and between the second clamp and the third clamp are bent into symmetric slant, wherein the second clamp moving in the direction toward the top of the first clamp at an angle, the third clamp moving in a horizontal direction toward the first clamp; moving the lower clamping head of the second clamp toward the bottom of the first clamp to make the lower clamping head away from the metal plate; keep moving the upper and lower clamping heads of the third clamp and the upper clamping head of the second clamp toward the original direction to a position such that the portions of the metal plate being bent into a slant between the first and second clamps and between the second and third clamps are further bent into two upright plates closely connecting to each other to form a vertical heat dissipater of radiating fins.
Patent TW-395040-B (TW)
Title: Metallization process of integrating tungsten plug and copper interconnect
Inventor: LIOU JUNG-SHI
IPC: H01L23/522
Filed: 1998-12-08
Granted: 2000-06-21
Abstract: The invention provides a metallization process of integrating tungsten plug and copper interconnect, which uses selective tungsten deposit to form the tungsten plug in the contact layer and form copper interconnect in application of the dual damascene structure. The process includes the steps of: (a) providing a semiconductor substrate covered with a dielectric layer; (b) forming the dual damascene structure including the interconnect trench and contact, which is exposed to the surface of the semiconductor substrate; (c) forming a tungsten plug in the contact using selective tungsten deposition method; (d) forming a barrier layer on the interconnect trench and the tungsten plug; and (e) forming a copper metal layer on the barrier layer, and filling up the interconnect trench.
Patent TW-402686-B (TW)
Title: Optical inspection method and apparatus
Inventor: ELYASAF EMANUEL
IPC: G01N21/956
Filed: 1998-12-22
Granted: 2000-08-21
Abstract: A method and an apparatus for an optical inspection of an object, having upper and lower faces, so as to detects existing on the object. First and second beams of an incident radiation are produced and directed onto the object. A light component of the first incident beam, which is reflected from one face of the object, and a light component of the second incident beam, which is transmitted through the upper and lower faces of the object, are simultaneously sensed. First and second images, formed, respectively by reflected and transmitted light components are acquired and analyzed so as to provide data indicative of the defects.
Patent TW-398083-B (TW)
Title: The nitride semiconductor light emitting element and its manufacturing method
Inventor: UDAGAWA TAKASHI
IPC: H01S5/323
Filed: 1998-12-24
Granted: 2000-07-11
Abstract: This is a nitride semiconductor light emitting element, which uses the indium-containing group III nitride semiconductor layer as a layer. Such semiconductor layer is composed of the multiple phase structure, which is consisted of one major phase and a multiple sub-phases. The major phase and the sub-phases have different quantity of indium. The subsystem is composed of indium crystals; a strained layer surrounds the interface of the crystal and the main phase.
Patent TW-524792-B (TW)
Title: Aromatic alkylation process
Inventor: GHOSH ASHIM KUMAR
IPC: C07C2/66
Filed: 1999-01-04
Granted: 2003-03-21
Abstract: A process for the alkylation of an aromatic substrate over a molecular sieve zeolite catalyst involving supplying an aromatic substrate to a reaction zone containing the catalyst. The molecular sieve catalyst is an effective aromatic alkylation catalyst and comprises a modified zeolite beta alkylation catalyst having an intergrowth of a ZSM-12 crystalline framework within the crystalline framework of zeolite beta. An alkylating agent is also supplied to the reaction zone which is operated under temperature and pressure conditions effective to cause alkylation of the aromatic substrate by the alkylating agent. An alkylated substrate is recovered from the reaction zone. A specific catalyst used in the invention is characterized by an x-ray diffraction pattern characteristic of zeolite beta and having a maximum peak at an interplanar spacing D of 4.0/±0.1A and secondary peaks S1 at a D spacing of 11.4±.2A, S2 at a D spacing of 4.2±.1A and a secondary doublet S3, S4 at D spacings within the range of about 3.0-3.4±.1A, and further comprising a first secondary peak characteristic of ZSM-12 occurring at an interplanar spacing D 10.0±2A and additional secondary peaks characteristic of ZSM-12 at D spacings less than the D spacing of said primary peak but greater than the D spacing of said doublet S3, S4. Specifically, the aromatic substrate is benzene and the alkylating agent is a C2-C4 alkylating agent, specifically ethylene. In a specific embodiment of the invention, there is provided a process for the production of ethylbenzene by the liquid phase ethylation of benzene. In this embodiment of the invention, benzene and an ethylating agent are supplied to a reaction zone comprising a modified zeolite beta alkylation catalyst. The reaction zone is operated under temperature and pressure conditions to maintain the benzene in the liquid phase to cause monoethylation of the benzene under conditions which the xylene produced in the reaction zone is no more than 0.05 wt.% based upon the amount of ethylbenzene produced. The toluene in the reaction zone is no more than 0.1 wt.% based upon the amount of ethylbenzene produced.
Patent TW-441067-B (TW)
Title: Field device electrostatic discharge protection circuit
Inventor: SHIU JEN-TSUNG
IPC: H01L23/60
Filed: 1999-01-11
Granted: 2001-06-16
Abstract: This invention is about field device electrostatic discharge protection circuit. The source electrode of N type field device transistor is connected with the gate electrode (and the base electrode) of N type metal oxide semiconductor transistor of the next stage, in which the source electrode of N type field device transistor is grounded through a resistor device. The voltage of source electrode of N type field device transistor is used to trigger N type metal oxide semiconductor transistor so as to make N type metal oxide semiconductor transistor have the function of turning on with low threshold voltage. Therefore, the internal device with much thinner gate oxide layer thickness is protected.
Patent TW-406325-B (TW)
Title: Focussed ion beam apparatus and control method for same
Inventor: SHIBATA HIROBUMI
IPC: H01J37/10
Filed: 1999-03-01
Granted: 2000-09-21
Abstract: A focussed ion beam apparatus has an ion source 1 and beam optics M which focus and deflect an ion beam 16 that is extracted from the ion source 1, the focussed and deflected ion beam 16 being shined onto the sample 7 to be machined, which is on a sample stage 8, so as to machine the sample7, at which time the sample stage 8 is caused to be inclined so as to machine the cross-section of the sample 7 at a prescribed angle. This apparatus further has means 21 for establishing, in response to the machining angle of the sample stage, a voltage of an ion beam extracting electrode 2, and means 23 for causing the sample stage 8 to be inclined by a prescribed angle, in response to the machining angle of the sample stage, so that the above-noted cross-section is machined at a prescribed angle.
Patent TW-539856-B (TW)
Title: Electrospray device for a mass spectrometer and method of delivering a plurality of sample streams to a mass spectrometer for sequential analysis
Inventor: HINDSGAUL OLE
IPC: G01N30/84
Filed: 1999-03-26
Granted: 2003-07-01
Abstract: An electrospray apparatus employing multiple electrospray needles mounted in a circular arrangement sequentially delivers multiple sample streams to a mass spectrometer for analysis. One electrospray device includes an electrospray chamber, a rotatable needle supporting plate, a plurality of electrospray needles mounted on the plate, and a charger for applying a charge to droplets delivered to the electrospray chamber by the needles. Another electrospray device includes an electrospray chamber, a plurality of electrospray needles arranged in a circular arrangement, a charger, and a rotatable member for delivering gas phase ions from one needle at a time to the mass spectrometer. The rotatable electrospray apparatus provides fast repetitive analysis of simultaneously operating chromatography columns or other sample streams with a single mass spectrometer.
Patent TW-513311-B (TW)
Title: Cosmetic composition comprising silicone pullulan, low viscosity silicone oil and powder ingredient
Inventor: KUROSAWA MARI
IPC: A61K8/893
Filed: 1999-04-30
Granted: 2002-12-11
Abstract: An external composition containing a silicone-modified polysaccharide compound and a low viscosity silicone oil and/or powder component, which is useful for covering rough surfaces on a skin.
Patent TW-451065-B (TW)
Title: Semiconductor device using power-on mode to control test mode and method thereof
Inventor: AMERIAN MEHRAN
IPC: G01R31/317
Filed: 1999-06-11
Granted: 2001-08-21
Abstract: The improved pin system enables a single, shared pin of a semiconductor device to have multiple functions that include: receiving data that determines the operating mode of the semiconductor device and also receiving data unrelated to the operating mode of the semiconductor device. The improved pin system comprises the single, shared pin coupled to a data latch. The data latch is configured to store operating mode data from the single, shared pin. This operating mode data preferably corresponds to a particular operating mode such as a functional mode or a test mode. Preferably, in response to the operating mode data stored in the data latch, the semiconductor device operates in either the functional mode or the test mode. As long as the data latch stores the operating mode data, this shared, single pin is capable of receiving data unrelated to the operating mode of the semiconductor device without changing the current operating mode of the semiconductor device.
Patent TW-445508-B (TW)
Title: Semiconductor wafer, method for producing the same, and wafer chuck
Inventor: USHIKI TAKEHITO
IPC: H01L21/304
Filed: 1999-06-29
Granted: 2001-07-11
Abstract: There are disclosed a semiconductor wafer which has undulation components on wafer back surface and/or wafer front surface of 10 mu m<SP>3</SP> or less represented in terms of power spectrum density at least for the components at a wavelength of 10 mm; method for producing a semiconductor wafer by polishing front surface of the semiconductor wafer which is held at its back surface, which utilizes a semiconductor wafer to be polished having undulation components on wafer back surface of 10 mu m<SP>3</SP> or less represented in terms of power spectrum density at least for the components at a wavelength of 10 mm; and wafer chuck provided with a holding surface for holding a wafer by chucking, wherein the holding surface has undulation components of 10 mu m<SP>3</SP> or less represented in terms of power spectrum density at least for the components at a wavelength of 10 mm. According to the present invention, undulation components of semiconductor wafers can be quantitatively evaluated, and thereby there can be provided a semiconductor wafer free from surface undulation components, a method for producing such a semiconductor wafer, and a wafer chuck therefor. Such undulation components may cause problems upon lithography, device separation and the like in the device-processing steps.
Patent TW-445728-B (TW)
Title: Low IF receiver
Inventor: DAVIE ALAN JAMES
IPC: H03K9/02
Filed: 1999-08-19
Granted: 2001-07-11
Abstract: A low IF receiver in which an input signal is frequency translated in quadrature related mixers (24, 26), filtered in respective low pass channel filters (38, 40), derotated to produce a wanted signal and its image (52, 54), is at switch-on operated as a zero IF receiver in order to determine which of the adjacent channels to the wanted channel has the smaller interferer and the local oscillator frequency supplied to the mixers (24, 26) is then adjusted to bring that interferer into the channel bandwidth of the low pass channel filters (38, 40). More particularly at switch-on the local oscillator (28) frequency is shifted by half a channel in order to place the wanted signal symmetrically about DC with the unwanted adjacent channel interferers disposed on each side. Simultaneously the bandwidth of the low pass filters (38, 40) is widened to include both the unwanted interferers and also a DC notch is inserted into the signal paths by high pass filtering means (34, 36). Each of the interferers is produced on a respective output (52, 54) of a derotate stage (50) and in a decision stage (56) it is determined which is the smaller of the interferers and on that basis a control stage (58) adjusts the local oscillator frequency by half a channel bandwidth in the positive or negative direction and simultaneously the bandwidths of the low pass filters (38, 40) are reduced and the high pass filtering means are removed thereby eliminating the notch in the frequency of the output of the mixers (24, 26).
Patent TW-427067-B (TW)
Title: Non-invasive measuring circuit for micro sensing signal
Inventor: HUANG SZ-LUEN
IPC: H03K3/00
Filed: 1999-10-08
Granted: 2001-03-21
Abstract: The present invention relates to a non-invasive measuring circuit for micro sensing signal which is to solve the problem when the tester uses the non-invasive pressure sensor measuring the physiological signal of human body. When the pressure sensor contacts the inspected person (surface of human skin), because the tester will apply undesired pre-pressure time, unexpected pressure by the pre-pressure operation, and the friction from the contact of sensor with the inspected person (surface of human skin), the pre-pressure time, pre-pressure and friction will cause the shift of pressure level relative to the human physiological signal, the temperature effect and high frequency noise so as to induce weak voltage signal distortion and not easy for measurement. The inventive measuring circuit comprises pre-pressure compensation, temperature compensation, micro low frequency filter and signal amplifying characteristics which can effectively capture the real physiological signal from the human body and convert into digital signal through the analog/digital converter for establishing physiology database which is useful for diagnosis.