baber/WOPTO huggingface dataset:
Patent JP-H04164867-A (JP)
Title: Castable refractory of alumina-spinel
Inventor: YOSHIMURA MATSUICHI
IPC: C04B35/66
Filed: 1990-10-29
Abstract: PURPOSE:To improve corrosion resistance, comprising a dense aggregate containing a specific wt.% of MgO raw material and a specific wt.% of carbonaceous raw material. CONSTITUTION:A mixture of 70-95wt.% MgO raw material such as sea water MgO clinker and 5-30wt.% carbonaceous raw material such as scaly graphite is blended with about 4-7wt.% calculated as outer percentage of a binder such as phenol resin. The blend is press molded, baked at about 400-500 deg.C and ground to give a dense aggregate having <=10% porosity. Then castable refractory of Al2O3 spinel obtained by blending Al2O3 raw material with spinel clinker and Al2O3 cement is blended with 5-30wt.% of the dense aggregate to give castable refractory of Al2O3.spinel having excellent corrosion resistance.
Patent JP-H03153270-A (JP)
Title: Image forming device
Inventor: WATANABE TAKASHI
IPC: G03G15/08
Filed: 1989-11-10
Abstract: PURPOSE:To prevent image irregurality from occurring by providing splashing toner attraction means which are coaxial to a gap regulation member, which are provided to the both side surfaces of the gap regulation member so that the same polarities thereof are faced each other, which remove toner splashing to the circumference of the gap regulation member from the outside circumferential surface and which also attract the toner to the both side surfaces. CONSTITUTION:A pair of hollow disk-like magnets 17 and 18 which are coaxial to a pair of resin regulation members (the rollers) 16 and 16, which have an outside diameter (h) which is shorter than the outside diameters H of the respective rollers 16 and 16, which is provided to the both surfaces of the respective rollers 16 and 16 so that the N poles thereof are faced each other and which attract the toner splashing to the circumferences of the rollers 16 and 16 from a housing are provided. Therefore, the splashing toner is attracted by the both surfaces having high magnetic flux density and prevented from being attached on the outside circumferential surface by repulsive force between the magnets 17 and 18 having the same polarity. Thus, the outside circumferential surfaces of the rollers 16 and 16 are always clean and the irregularity or a lateral line is prevented from occurring on an image.
Patent JP-H04165353-A (JP)
Title: Correction method of photo-mask
Inventor: YAMASHITA YOSHIO
IPC: G03F1/72
Filed: 1990-10-30
Abstract: PURPOSE:To enable correction of defects of photo-mask for phase shift easily while maintaining the resolution of photo-mask by performing correction while providing a light shielding member on a defect area when the size of defect of a lost part is so large that resolution may be done only by itself. CONSTITUTION:Correction of defect with a large lost part 61 which provides high possibility of generating reduction in resolution is carried out by providing a shielding member, e.g. chromium film 51 at the lost area. In this case, the film thickness of the member 51 may well be a value for enabling shielding light,a nd thus control of film thickness is extremely facilitated in comparison with the case where the lost area is corrected by using a material the same as a shifter member. The member 51 is arranged to extend in a specified area at least on the outside of the shifter in correcting the lost area with the shielding member 51. It is thus possible to restore the inherent resolution of a photo-mask.
Patent JP-S63146740-A (JP)
Inventor: FUNAHASHI TAKESHI
IPC: A21D8/04
Filed: 1986-12-09
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H02139965-A (JP)
Title: Manufacture of semiconductor device
Inventor: TAKAHASHI KUNIHIRO
IPC: H01L29/78
Filed: 1988-11-18
Abstract: PURPOSE:To prevent the deterioration of characteristics of a transistor by forming P-type and N-type MOS transistors so that their sidewall insulating films may be different in width. CONSTITUTION:As to a silicon oxide film 16 which is formed with vapor growth in order to form sidewall insulating films, a region where a P-type transistor is formed is covered with a photoresist 17 and the silicon oxide film 16 is etched with a reactive ion etching process and further, removal of the resist 17 allows the sidewall insulating films 19 to be formed on both side faces of a gate electrode 13 in an N-type MOS transistor and the films 19 are covered with a resist 110. The silicon oxide film 16 which still remains on an N-type well is removed with the reactive ion etching process to form the sidewall insulating films on both sides of a gate electrode in a P-type MOS transistor. The sidewall insulating films in N-type and P-type MOS transistors are formed into different sizes W1 and W2 in width; however, W2 gets larger than W1.
Patent JP-H02137825-A (JP)
Title: Active matrix substrate
Inventor: SAKONO IKUO
IPC: G02F1/136
Filed: 1988-11-18
Abstract: PURPOSE:To prevent a leak of charges between a picture element electrode and wire-breaking preventive wiring without increasing man-hours by forming the wire-breaking preventing wiring by using the same material as that of the picture element electrode for an intersection area of a signal line and a scanning line and the same material as that of the scanning line for areas other than the intersection area. CONSTITUTION:This substrate has switching elements connected to picture element electrodes 11 arranged on an insulation substrate in a matrix and scanning lines and signals lines for driving the switching elements. Then, wire- breaking preventive wiring parts 3a and 3b are formed of the same materials with the picture element electrodes at intersection areas of the signal lines and scanning lines and of the same materials with the scanning areas except at the intersection areas. Consequently, the wire-breaking preventive wiring parts 3a and 3b are formed without increasing the man-hours greatly and the charge leak between the wire-breaking preventive wiring parts 3a and 3b and picture element electrodes 11 is reduced.
Patent JP-H01134433-A (JP)
Title: Nonlinear waveguide type optical control element and its driving method
Inventor: KOMATSU YOSHIRO
IPC: G02F1/31
Filed: 1987-11-20
Abstract: PURPOSE:To enable optical control and optical modulation, optical logical arithmetic operation, etc., by utilizing nonlinear variation in the refractive index of a multiple quantum well MQW which is caused by absorbing light nearby the exciton peak wavelength of the MQW. CONSTITUTION:This element consists of 1st and 2nd optical waveguides 13a and 13b which cross each other and a reflection part 6 which is arranged on the center line of the intersection part, and the reflection part 6 has MQW structure wherein quantum wells are multiplied in the layer thickness direction. Then when control light 10 is not incident on an optical waveguide 13b, signal light 12 entering an optical waveguide 13a travels as it is and is projected. When control light 10 with the same wavelength as the exciton peak wavelength of this MQW is entered into the optical waveguide 13b, the control light 10 reaches an MQW reflection part 6 and is absorbed by the MQW to eliminate the exciton peak of the MQW, thereby causing a decrease in refractive index. The signal light 12 is therefore reflected totally by the MQW reflection part 6 and outputted from the optical waveguide 13b. Consequently, various waveguide optical logic element, waveguide type optical control and optical modulating element, optical control wavelength converting element, etc., which have low loss and small crosstalk are obtained.
Patent JP-S63148445-A (JP)
Title: Magneto-optical disk
Inventor: OKADA SEIJI
IPC: G11B11/10
Filed: 1986-12-11
Abstract: PURPOSE:To prevent bleeding of bits and to reduce noise by crystallizing the recording layers of in-groove parts or inter-groove parts of the recording layers which are formed on a substrate having guide grooves and consist of amorphous rare earth-transition metal films. CONSTITUTION:The recording layer of the in-groove parts or inter-groove parts of the recording layers which are formed on the substrate having the guide grooves and consist of the amorphous rare earth-transition metal films are crystallized. The saturation magnetization Ms' of the films in the crystallized parts is preferably Ms'/Ms>2 with respect to the saturation magnetization Ms prior to the crystallization. The recording layers consist preferably of the alloy having the compsn. TbxFe1-x, Tbx(FeCO)1-x, TbxCO1-x or (TbGd)x(FeCO)1-x (where 0.2<x<0.4). The vertical anisotropy in the crystallized parts is erased and the Curie temp. is increased if the recording layers are crystallized in the above-mentioned manner; therefore, no bits are formed in said parts even if a recording beam is projected thereto. The medium which obviates the bleeding of the bits and has the uniform planes of polarization is obtd.
Patent JP-2000124223-A (JP)
Title: Semiconductor device and its manufacture
Inventor: INO KAZUMI
IPC: H01L29/732
Filed: 1998-10-15
Abstract: PROBLEM TO BE SOLVED: To enable to make the base resistance as low as possible. SOLUTION: This semiconductor device is provided with a second conductivity-type semiconductor layer 4, which is formed on a first-conductivity type semiconductor substrate 2 and has a different conductivity-type, a second conductivity type collector region 6 and a collector electrode region 6a, which are formed on the semiconductor layer and is isolated by an element isolation insulating film 8, a first conductivity-type base layer 10 formed on the region which covers the collector region, a second conductivity-type emitter layer 22 formed in a part of the surface region of the base layer, a conductive film 12 formed in the surface region of the base layer except for a region where the emitter layer is formed, being isolated from the emitter layer, an emitter electrode 20 formed on the emitter layer, and insulating layers 14, 18 which electrically isolate the base layer and the conductive film from the emitter electrode.
Patent JP-H01165544-A (JP)
Title: Partially fluorinated carboxylic acid and its derivative, its production and use
Inventor: FURAIMUNTO REERUSHIYAITO
IPC: C07C65/24
Filed: 1988-11-22
Abstract: NEW MATERIAL: A compound of formula I (R is H, COOH, acid chloride when R is H or dianhydrate when R is COOH).  
     EXAMPLE: 4,4'-bis-[2-(4-chlorocarbonylphenyl)-hexafluoro-isopropyl]-diphenylether.  
     USE: A component relating polyimides used for coating or adhesion which is exposed to heat of high temperature, for example in construction for airtraffic or microelectronics.  
     PROCESS: A compound of the formula is obtained by atmospheric oxidation in an acid medium of the corresponding methyl compound (the compound of formula substituted COOH for CH 3 ) in an acidic organic solvent in the presence of at least two of heavy metal compounds and bromide ions and conversion thereof to dianhydrates and acid chlorides. 
     COPYRIGHT: (C)1989,JPO
Patent JP-S63155392-A (JP)
Inventor: JIYAN KUROODO MEIRO
IPC: G06K7/00
Filed: 1987-11-20
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H02139978-A (JP)
Title: Josephson element and its manufacture
Inventor: TONO HIDETAKA
IPC: H01L39/24
Filed: 1988-11-21
Abstract: PURPOSE:To avoid deterioration of the characteristics of oxide superconducting thin films by a method wherein a wiring metal oxide superconducting thin film which is so formed as to be brought into electrical contact with a second metal oxide superconducting thin film of a junction part is insulated from a first metal oxide superconducting thin film or a metal thin film in the part other than the junction part. CONSTITUTION:Composite compound of Bi-Sr-Ca-Cu-O, Bi-Pb-Sr-Ca-Cu-O, A-B-Cu-O or A-B-Cu-O-S is employed as material of a metal oxide superconducting film to obtain a Josephson element whose critical temperature is higher than a boiling point of liquid nitrogen. Moreover, in a laminated thin film Josephson junction part composed of a first metal oxide superconducting thin film, a second metal oxide superconducting thin film 5 formed above the first film 2 so as to be brought into contact with a barrier layer 4 and a metal thin film 3 and the barrier layer 4 which are provided between the films 2 and 5, the influence of the surface unevenness of the first metal oxide superconducting thin film 2 is moderated and the boundary reaction between the barrier layer 4 or an interlayer insulating film 7 and the meter oxide superconducting thin films 2, 5 and 8 are suppressed by a proximity effect of the metal thin film 3.
Patent JP-2001116209-A (JP)
Title: LOW NOx RADIANT TUBE BURNER SYSTEM
Inventor: SHIZUKUISHI SHIN
IPC: F23C3/00
Filed: 1999-10-15
Abstract: PROBLEM TO BE SOLVED: To dissolve the problem that, in a conventional radiant tube burner system to utilize exhaust gas recirculation and multistage combustion for reducing occurrence of NOx, there is a need for equipment, such as a feed pipe and a blower to re-circulate exhaust gas and complicated structure to stepwisly mix fuel or air. SOLUTION: A feed means 9 for air or oxygen is constituted on the exhaust end side 10 of a radiant tube 1 having one end side where a burner 2 is situated. The burner is caused to effect combustion in a low air ratio and air or fuel is fed to the internal part on the exhaust end side of the radiant tube by the feed means and an unburnt content in exhaust gas flowing through the tube is completely burnt. The above low NOx radiant tube burner system is provided. The system is also applicable to a regenerative radiant tube burner system.
Patent JP-S62264747-A (JP)
Title: Packet repeating system
Inventor: MAENO JUNICHI
Filed: 1985-12-27
Abstract: PURPOSE:To prevent congestion of data by selecting the line of the 2nd priority even when the line of the 1st priority is normal, when the line is the same as a reception line for a packet at the time of selecting and setting a transmission line. CONSTITUTION:If a line fault takes place between, e.g., nodes N3 and N4 amidst the transmission of apacket from anode N1 to the a node N4, the packet is returned from the node N3 to the node N2. Since the line L21 of the 1st priority is the same as the reception line L21 of the packet, the node N2 sends the said packet returned to the line L22 of the 2nd priority. The packet sent to the line L22 is sent to the node N4 via a detour through the node N5. Thus, semi-permanent reciprocation of the packet between the nodes N2 and N3, causing data congestion is prevented.
Patent JP-H1093308-A (JP)
Title: Irreversible circuit component
Inventor: MAKINO TOSHIHIRO
IPC: H01P1/383
Filed: 1996-11-06
Abstract: PROBLEM TO BE SOLVED: To easily convert and set an input output impedance to a desired value by connecting an inductor between at least one port of center conductors and a signal input output terminal corresponding to the port so as to increase out-band attenuation thereby improving the mount strength. SOLUTION: One terminal of a coil Lf is connected to ports P1, P2 of center conductors, and the other terminal connects to an input output terminal 71 (72). That is, the ports P1, P2 are respectively connected to the input terminals 71, 72 through the coil Lf. That is, matching capacitors C1-C3 are connected respectively to ports P1-P3 at the tip of the center conductors, a termination resistance R is connected to the port P3, and the inductor Lf is connected respectively between the port P1 (P2) and the input output terminal 71 (72). In this case, the values of the induct Lf, the capacitor Cf and the electrode distribution capacitor Cp are properly set.
Patent JP-H09172151-A (JP)
Title: Electric charge storage electrode contact hole formation of semiconductor device
Inventor: JIYON I SAN
IPC: H01L21/8242
Filed: 1996-11-06
Abstract: PROBLEM TO BE SOLVED: To prevent direct contact between a polysilicon film for a charge storage electrode and a silicon substrate or a P-well region by performing inclined etching in which the contact hole becomes narrower toward the lower portion thereof, thus preventing charge loss and increasing refresh time. SOLUTION: In forming a charge storage electrode contact hole by etching an interlayer insulating film 5 using an etching mask, inclined etching is performed in which the contact hole becomes narrower toward the lower portion thereof. For example, the interlayer insulating film 5 made of an oxide film is etched by inclined etching using an etching gas including C3 F8 gas and CO gas at a ratio of 1:1 to 1:5. Etching conditions for this inclined etching are source power of 1800-2700W, bias power of 600-1800W, C3 F8 gas flow rate of 0-50sccm, CO gas flow rate of 30-100sccm, roof temperature of 200-280 deg.C, wall temperature of 200-240 deg.C, chuck temperature of -20 deg.C to 0 deg.C, and throttle valve open rate of 50-100%.
Patent JP-S62151841-A (JP)
Title: Photosensitive material and image forming method
Inventor: NAKAMURA KOICHI
IPC: G03F7/30
Filed: 1985-12-26
Abstract: PURPOSE:To obtain the titled material having a less tendency for generating a fog and capable of giving an image having a prescribed sharpness even if in the case of changing a treating condition by forming a photosensitive layer contg. a silver halide, a reducing agent, a polymerizable compd. and a specific compd. on a substrate. CONSTITUTION:The photosensitive layer contg. the silver halide, the reducing agent, the polymerizable compd. and the compd. having 5 or 6 membered cyclic amide structure shown by formulas I-III is formed on the substrate body. In the formulas, X<1> is an atomic group necessary to form 5 or 6 membered ring together with -CO -NH- -CO- residue, X<2> is an atomic group necessary to form 5 or 6 membered ring together with -CY<1>=N-NH-CO-residue, X<3> is an atomic group necessary to form 5 or 6 membered ring together with -CNY<2>- NH-CO-residue, Y<1> and Y<2> are each a monovalent group selected from hydrogen, an alkyl, an aralkyl and an alkoxy group. The additional amount of the compd. is <=100wt%, preferably 0.1-50wt% on the wt. basis of the silver halide. The titled material preferably contains 0.1-1,500mol% of the reducing agent and 0.05-1,200wt% of the polymerizable compd.
Patent JP-H06152500-A (JP)
Title: Paging device and paging system
Inventor: SHIMIZU HIROTOSHI
IPC: H04W84/02
Filed: 1992-11-02
Abstract: PURPOSE:To provide a device and system enabling link with another terminal by providing a memory for converting/outputting a radio signal, and converting a read number from a memory to a PB signal. CONSTITUTION:The received signal of a radio unit 2 is A/D converted 3 and stored in an IC memory card 4A. This stored information is the communication number of the other party or a simplified message, etc. This card 4A is provided separately from a paging device 10A. Then, communication numbers stored in the card 4A are successively converted to PB signals by a tone generator 6. This PB signal is outputted through a sounding part 7 as a voice signal. Then, a user press the sounding part 7 to a transmitter so as to send the destination number.
Patent JP-S62155725-A (JP)
Inventor: YAMAZAKI KIYOKUMA
IPC: H02J3/00
Filed: 1985-12-26
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H08150143-A (JP)
Title: Nerve axon flow measuring device
Inventor: KASHIWAZAKE MASAKI
IPC: A61B10/00
Filed: 1994-11-29
Abstract: PURPOSE: To provide a nerve axon flow measuring device which can easily measure the velocity of an nerve axon flow. CONSTITUTION: The velocity of the flow of an axon can be measured without using a radioactive isotope by temporally measuring how the pigments injected into the nerve 2 inside an organism 1 moves within the nerve 2, as the intensity distribution of transmitted light by means of a measure means 13. Therefore, an evil does not occur such as the exposure to radiation caused by the dosage of radioactive isotope to an organism 1, the restriction on facilities, etc., or the likes.
Patent JP-H07146452-A (JP)
Title: Liquid crystal type video projector
Inventor: SADO KENZO
IPC: G02F1/13
Filed: 1993-11-25
Abstract: PURPOSE:To set astigmatism of the whole passages 0, and prevent the so-called registering dislocation by forming dichroic mirrors of a liquid crystal type video projector in a wedge shape, and inserting a wedge-shaped correcting plate having a prescribed shape and an inclination in a passage in which a transmission type dichroic mirror is not arranged among three passages. CONSTITUTION:Dichroic mirrors are formed 83 wedge-shaped dichroic mirror 2b and 3b, and are constituted by inserting a wedge-shaped correcting plate 8 in a passage between a liquid crystal display panel 4b and the dichroic mirror 3b, and in a thickness (t) at a light incident point, when the dichroic mirror 2b is set in 4.535mm and the dichroic mirror 3b is set in 1.500mm and a distance up to this correcting plate 8 from the liquid crystal display panel 4b is set in 15.0mum, a thickness (t) of this correcting plate 8 is set in 7.590mm, and a wedge angle (sigma) is set at 1.43 deg., and an inserting angle (theta) is set at 10.0 deg..
Patent JP-S62151977-A (JP)
Title: Calculation sequence detecting device
Inventor: SHIRABE SHIGETOSHI
IPC: G06F15/78
Filed: 1985-12-25
Abstract: PURPOSE:To effectively decide the optimum calculation sequence of a relating calculation expression when a value of a certain variable is changed by deciding an optimum recalculation sequence from the information of the variable in which the value is changed and the second matrix after the operation of a matrix arithmetic means is stopped. CONSTITUTION:When a sequence decision part 15 is activated by a control part 11, in the respective elements of the fourth column of a matrix R' in a local memory 12, the elements in which values are not '0' are rearranged in an ascending sequence, information of the corresponding variables is set in a main memory with the sequence left as it is and the completion of the operation is informed to the control part 11. The variables set in the main memory by a sequence check part 15 have, in the example of the matrix R', the sequence of GAMMA'7,4, GAMMA'8,4, GAMMA'11,4, GAMMA'12,4, GAMMA13,4, GAMMA'14,4. The order of sequence of the variables set in this main memory, namely, the order of the calculation expression defined in the variables to which numbers 7, 8, 11-14 are added (the total of the quantity, the amount of goods A, the total of the amount, a constitution ratio of the amount of the goods A, the constitution ratio of the amount of goods B, the constitution ratio of the amount of goods C) is the optimum recalculation sequence when the quantity of the goods A is changed.
Patent JP-H05106007-A (JP)
Title: Production of high strength galvannealed steel sheet excellent in film characteristic as well as in balance between strength and ductility
Inventor: INAGAKI JUNICHI
IPC: C23C2/28
Filed: 1991-10-15
Abstract: PURPOSE:To produce a high strength galvannealed steel sheet excellent in film characteristics as well as in the balance between strength and ductility by subjecting a steel having a specific composition to hot rolling under specific temp. conditions and, if necessary, to cold rolling, subjecting the resulting steel sheet to annealing at specific temp. by means of CGL and to plating, performing alloying treatment on an induction heating system, and then applying cooling to the resulting galvannealed steel sheet. CONSTITUTION:A steel having a composition consisting of, by weight, 0.08-0.14% C, 0.15-0.35% Si, 1.50-2.00% Mn, <=0.05% P, <=0.02% S, 0.03-0.06% Sol.Al, <=0.007% N, 0.15-0.25% Cr, 0.05-0.10% V, and the balance Fe with inevitable impurities is hot- rolled at <=1170 deg.C hot rolled slab heating temp. and at <=600 deg.C coiling temp. and subjected, if necessary, to cold rolling. After the resulting steel sheet is annealed at a temp. in the range between the Ac1 transformation point and the Ac3 transformation point by means of a continuous hot-dip galvanizing line, plating is done. Then, the steel sheet is subjected to alloying treatment by means of an alloying furnace on an induction heating system so that outlet-side sheet temp. becomes 450-550 deg.C, followed by cooling down to <=300 deg.C at a rate of >=10 deg.C/sec.