baber/WOPTO huggingface dataset:
Patent TW-253922-B (TW)
Title: Working process for penetrating earth ground and squeezing out or infusing in cement slurry and its structure
Inventor: LU SHYI-HUANN
IPC: E02D5/74
Filed: 1995-01-28
Granted: 1995-08-11
Abstract: A working process for penetrating earth ground and squeezing out or infusing in cement slurry and its structure, which comprises using a punching machine, punching pipe, conical cusp, anchor rod, etc. to punch the punching pipe to a pre-determined depth, squeezing out or infusing in cement slurry while gradually recovering the punching pipe to achieve the purpose of anchoring, in which the working process comprises: (1) loosed pudding stone layer: (a) using the punching machine to punch the punching pipe, conical cusp together with rock bolt to a pre-determined depth; (b) squeezing out or infusing in cement slurry; (c) gradually recovering the punching pipe while continuing in squeezing out or infusing in cement slurry; (2) cohered pudding stone layer: (a) using a hole-drilling machine to drill hole to a pre-determined depth; (b) using the punching machine to punch the punching pipe, conical cusp together with rock bolt to a pre-determined depth; (c) squeezing out or infusing in cement slurry; (d) gradually recovering the punching pipe while continuing in squeezing out or infusing in cement slurry; (3) medium pudding stone layer or fragmented layer: (a) using a hole-drilling machine to drill hole to a pre-determined depth; (b) using the punching machine to punch the punching pipe, conical cusp together with rock bolt to a pre-determined depth; (c) squeezing out or infusing in cement slurry; (d) gradually recovering the punching pipe while continuing in squeezing out or infusing in cement slurry.
Patent TW-265289-B (TW)
Title: Densification of Ni-Al with powder metallurgy process
Inventor: HWU CHERN-DYI
IPC: B22F7/00
Filed: 1994-02-25
Granted: 1995-12-11
Abstract: This invention is concerning a new method to densify the nickel aluminide powder metallurgy (PM) products with the elemental Ni and Al powders as raw material. The main points are using two or more than two stages of sintering, and the heat absorbent materials keeping to contact with the powder compacts during the primary sintering stage. Therefore, the generated reactive heat from Ni and Al powders in primary sintering will be diluted and the temperatures of compacts will be depressed to a low value to avoid the transformation of heavy NiAl or Ni3Al phase. It has been proved that the primary sintered semi-final products have a microstructure with uniformly distributed Ni2Al3 phase and unreacted pure Ni regions, and they are much more soft and tough than the NiAl and Ni3Al ones. They are beneficial to the following rolling, forging, pressing, drawing etc., deformation process in cold or hot condition. The semi-final products can keep a sound integrity without any crack during and after the deformation process, thus the pores and holes which have developed in primary sintering, can be collapsed, decreased can healed. Then the deformed semi-final products are treated for second stage normal sintering to transfer the structure to Ni3Al phase from Ni2Al3 and Ni, and to diffusion-bond the collapsed pores. Furthermore, one or more cycles of deformation and annealing treatments can be applied to the normal sintered products to improve their density as well as the mechanical properties. Thus a high density, high strength, large dimension nickel aluminide plates, rods, wires, tubes or other products with complex shape could be produced.
Patent TW-267284-B (TW)
Title: Mixing-type monitoring technique for fiber user loop network
Inventor: CHEN YEONG-GUANG
IPC: H04L29/14
Filed: 1994-05-27
Granted: 1996-01-01
Abstract: A mixing-type monitoring technique for fiber user loop network mainly comprises: one wavelength-division-multiplexed optical time domain reflectometer for measuring transmission loss features and fault points of fiber link, making the service and monitoring function of the network operate in-service with light wavelength (lambda)2 different with network service light wavelength (lambda)1; one active branching unit consisting of one passive 1xN fiber coupler, one 1:N optical switch, N light splitting multiplexor, one light splitting demultiplexer and one set of photodetector array device; one monitoring system controller for controlling optical time domain reflectometer and all optical switches, and collecting and processing all monitored signals and optical time domain reflectometer track graph, and executing necessary warning, testing and recovering etc. jobs.
Patent TW-296988-B (TW)
IPC: B21B1/28
Filed: 1994-07-28
Granted: 1997-02-01
Abstract: This invention provides a method and an apparatus for removing scales from hot-rolled steel strips (1) to produce steel strips with excellent surface conditions. In a pickling facility to pickle the hot-rolled steel strip, the pickling method of this invention passes an electric current through the continuously fed, hot-rolled steel strip in one or more of a plurality of pickling tanks (4). A means to supply an electric current is also provided. <IMAGE>
Patent TW-319686-B (TW)
IPC: A61B17/28
Filed: 1994-11-16
Granted: 1997-11-11
Abstract: A reusable endoscopic surgical instrument (10) includes a handle assembly (14) attached to a slender shaft assembly. The shaft assembly (12) includes inner and outer shafts (18,16), with the inner shaft being rotatable by operation of the handle assembly to rotate a surgical tool (9) operably connected to the distal end of a pushrod (30) disposed within the inner shaft. The handle assembly includes a first actuating mechanism for actuating the pushrod to operate the surgical tool and a second actuating mechanism for rotating the inner shaft. The outer shaft is axially slidable with respect to the inner shaft to cover a flush port system (78) in the handle assembly for cleaning and improved sterilizability of the instrument. <IMAGE>
Patent TW-263561-B (TW)
Title: Analyzing and testing system for integrated circuit malfunction
Inventor: HORNG HUEY-CHYUAN
IPC: G01R31/303
Filed: 1995-01-20
Granted: 1995-11-21
Abstract: An analyzing and testing system for integrated circuit malfunction comprises the components of: address generator used for generating address signal; memory unit used for storing function test patterns and outputting function test pattern to integrated circuit according to address signal; cmparator used for comparing function test pattern ouput from memory unit with results from tested integrated circuit, and outputting one compared result.
Patent TW-256974-B (TW)
Title: Wireless communication terminal
Inventor: WILSON ANDREW LORIMER
IPC: H04L29/12
Filed: 1995-02-21
Granted: 1995-09-11
Abstract: A method of operating a wireless communication terminal (1) comprising identifying a preferable one of at least two wireless networks (6,7,8) for establishing an outgoing call on the basis of an algorithm involving at least one parameter related to the networks. The terminal may be a mobile telephone handset, or a PC with radio communication capabilities for transmitting data. The algorithm typically identifies the cheapest available network for the outgoing call on the basis of current network tariff information.
Patent TW-397826-B (TW)
Title: High purity 6,9-bis[(2-aminoethyl)amino]benzno[G]-isoquinoline-5,10-dione dimaleate and method of synthesis
Inventor: SPINELLI SILVANO
IPC: C07C57/145
Filed: 1995-03-25
Granted: 2000-07-11
Abstract: A method for the synthesis of 6,9-bis[(2-aminoethyl)amino]benzo[g]-isoquinoline-5,10-dione dimaleate of greater than 99%purity which method comprises: (a) to a solution of a large excess of ethylenediamine in THF,6,9-difluorobenzo-[g]isoquinoline-5,10-dione is slowly added portionwise; (b) the mixture is stirred for 2-4 hours at the same temperature and a blue precipitate was gradually formed; (c) after stirring at room temperature for one night,the suspension is filtered under inert atmosphere,washed with THF and dried to yield crude 6,9-bis[(2-aminoethyl)-amino]benzo[g]isoquinoline-5,10-dione as dihydrofluoride salt; (d) the crude product is directly dissolved into a mixture of water and AcOH in order to obtain a dark blue solution with pH 4-6, which is filtered; (e) the filtered solution is gradually treated at room temperature with a aqueous filtered solution of maleic acid to reach pH 2-5; (f) after 20-40 minutes at 30-50 DEG C ,the suspension is stirred overnight at room temperature; (g) the blue precipitate is washed with additional water and EtOH,then dried to give crude 6,9-bis[(2-aminoethyl)amino]benzo[g]isoquinoline-5,10-dione dimaleate; (h) the crude dimaleate salt is suspended in water and heated to 40-60 DEG C for 20-40 minutes; (i) after one night stirring at room temperature,the suspension is filtered again,the blue precipitate is washed with additional water and this moist material is resuspended in water and kept under stirring at room temperature for 30-50 hours; (j) the dimaleate salt is filtered, washed with additional water and EtOH, and then dried to yield 6,9-bis[(2-aminoethyl)amino]benzo[g]isoquinoline-5,10-dione dimaleate.
Patent TW-287978-B (TW)
IPC: B26B21/40
Filed: 1995-08-19
Granted: 1996-10-11
Abstract: The present invention relates to a skin engaging member for use in a razor blade cartridge assembly or shaving systems of the wet shave type comprising an elongated flexible sheath region and at least one elongated, rigid core region. The core region is surrounded by the sheath such that the outer surface of the core does not intersect the outer surface of the sheath. Generally, the core or cores extend axially throughout the sheath and provide sufficient mechanical strength and rigidity to provide adequate mechanical strength and rigidity to provide adequate mechanical strength to the entire skin engaging member, as initially produced, during the shaving operation and after a significant amount of shaves.
Patent TW-395047-B (TW)
Title: Method of manufacturing MOSFET device on the semiconductor substrate using buried-in joints, and the structure of the MOSFET device
Inventor: HUANG JEN-MING
IPC: H01L27/105
Filed: 1996-01-03
Granted: 2000-06-21
Abstract: A method of manufacturing the device of metal oxide semiconductor field effect transistor (MOSFET) is provided, of which a suitable buried-in joint method has been developed for the source and drain joint. The method can diminish the negative influence of the trench or gap caused in the device region due to the bad alignment of photolithography as the dry etch mask. Such trench or gap finally cause the increase of connecting resistor which is connected between the polysilicon with the active region inside the semiconductor substrate. When the film on the polysilicon gate structure is used to produce the spacer, the film also fill up the undesired trench or gap. Therefore, when selecting the material having the characteristic of gate edge field effect charge, there will be more carrier stack layers generated in the current path.
Patent TW-319731-B (TW)
Title: The forming method and jigs of the high pressure connector
Inventor: HWANG JENG-YIH
IPC: B23P17/00
Filed: 1996-01-13
Granted: 1997-11-11
Abstract: A forming method of a kind of high pressure connector features that: a. a set of mould and associated jigs for cold forging process to fabricate the jog of the conoid hole. b. to form the gutter by light turing. c. to process the overall heat treatment on the connector to stabilize the hardness so that the jog can be impactproof and kept from loosened.
Patent TW-289852-B (TW)
Title: The manufacturing method of contact W-plug
Inventor: LUOH YEONG-CHUEN
IPC: H01L23/522
Filed: 1996-03-02
Granted: 1996-11-01
Abstract: A manufacturing method of contact W-plug for preventing volcano phenomena includes: - Form contact hole; - Proceed contact ion implantation and form element area; - Form SIO2 insulating layer then deposit BPSG by CVD on oxide & element area; - Form Ti & TiN by sputtering, here the Ti is under the TiN; - Use different size clamping ring to clamp the wafer in two reaction rooms; deposit W nucleation layer by CVD in one room then proceed W deposition in another reaction room and fill contact; - Proceed single direction etch back on W by plasma etching to form W-plug inside the contact.
Patent TW-416850-B (TW)
Title: Transparent rapid release compositions of non-steroidal analgesics
Inventor: BREITENBACH JOERG
IPC: A61K9/20
Filed: 1996-03-19
Granted: 2001-01-01
Abstract: Transparent rapid release active substance compositions obtainable by extrusion of melts, containing non-steroidal analgesics, homopolymers of N-vinylpyrrolidone, saccharides or sugar alcohols and sodium or potassium salts.
Patent TW-335565-B (TW)
Title: Indoors antenna system
Inventor: AMTHONY G ESPOSITO
IPC: H01Q21/28
Filed: 1996-04-22
Granted: 1998-07-01
Abstract: A sort of indoors antenna system, including: the first plurality of antenna compoonents, having each a device for emission of energy of the emission frequency; the first and second end; and a device for serial connection of the plurality of antenna components; where the plurality of antenna components emitting roughly the total emission frequency energy of the programmed portion into the antenna system.
Patent TW-476712-B (TW)
Title: Printing process for forming high contrast color images on polymer surfaces, toner particle, electrified toner particle and liquid toner for using in a printing process, and printed image printed therewith
Inventor: LANDA BENZION
IPC: G03G15/16
Filed: 1996-05-04
Granted: 2002-02-21
Abstract: A printing process for forming high contrast color images on polymer surfaces, comprising: (a) forming a layer of substantially opaque liquid toner comprising polymer based toner particles and a carrier liquid, on an imaging surface; (b) transferring the layer to an intermediate transfer member; (c) heating the layer on the intermediate transfer member to a temperature at which the toner particles at least partially coalesce; (d) repeating (a) to (c) sequentially for at least one subsequent layer in at least one color, said at least one subsequent layer being transferred to the intermediate transfer member onto the opaque layer to form multiple layers on the intermediate transfer member; and (e) transferring the multiple layers to a polymer surface.
Patent TW-318962-B (TW)
Title: Manufacturing method of lightly doped drain thin-film transistor
Inventor: TSAY SHYONG-GUANG
IPC: H01L27/13
Filed: 1996-08-09
Granted: 1997-11-01
Abstract: A manufacturing method of lightly doped drain thin-film transistor comprises of the steps: (1) preparing one glass substrate; (2) on one portion of the glass substrate forming one gate region; (3) on the gate region and substrate depositing one insulator; (4) on the insulator depositing one semiconductor layer; (5) on the semiconductor layer forming first photoresist; (6) with the gate region as mask, using back-side exposure technology, making first photoresist a little over-exposed; (7) to the first photoresist performing development, forming first un-exposed region smaller than gate region; (8) on semiconductor layer except the first un-exposed region, forming one lightly doped region; (9) on the first un-exposed region, removing the first photoresist; (10) on the semiconductor layer and insulator, forming second photoresist; (11) with the gate region as mask, using back-side exposure technology, making second photoresist layer a litter under-exposed; (12) to the second photoresist performing development, forming second un-exposed region larger than gate region; (13) on semiconductor layer except the second un-exposed region, forming one heavily doped region; (14) on the second un-exposed region, removing the second photoresist; (15) by conventional photolithography technology, removing outside part of semiconductor layer, forming one island region, which includes first un-exposed region, lightly doped region, and heavily doped region; (16) on one end of the island region forming one drain, which covers partial heavily doped region, and extends onto the insulator; (17) on another end of the island region forming one source, which covers partial heavily doped region, and extends onto the insulator.
Patent TW-311988-B (TW)
Title: Parallel testing circuit of semiconductor memory device
Inventor: CHAN-JONG PARK
IPC: G11C29/38
Filed: 1996-12-05
Granted: 1997-08-01
Abstract: A parallel testing circuit of semiconductor memory device, which has one memory array containing multi-memory cells and multiple comparison devices for high-speed memory cell test, comprises of: (1) multiple first comparison devices, according to transmission data of multiple data output lines of memory block near the memory array executing first comparison; (2) multiple second comparison devices, commonly coupled to each output of the first comparison device, and according to output data of the first comparison device executing second comparison; (3) multiplexer, according to output data of the second comparison device executing multiplexing operation; (4) first and second switch device, selectively connected to one output of the multiplexer; (5) one data output buffer, coupled to output end of the first and second switch device and buffer output of the first and second switch device; in which the multiplexer is connected to the first switch device to be used in first operation mode, connected to the second switch device to be used in second operation mode, hereby executing two-way data testing.
Patent TW-316334-B (TW)
Title: Manufacturing method of flash memory device with recessed floating gate
Inventor: TZENG HORNG-HUEI
IPC: H01L27/115
Filed: 1996-12-06
Granted: 1997-09-21
Abstract: A manufacturing method of flash memory device with high gate coupling ratio(GCR) comprises of: (1) on silicon semiconductor substrate forming one first dielectric; (2) by photolithography technology on position prepared to be used as floating gate forming photoresist pattern and first photoresist opening; (3) forming non-volatile organic polymer; (4) by plasma etch etching the above first dielectric to form first trench; (5) removing the above photoresist pattern and non-volatile organic polymer; (6) on the above first trench forming tunnel oxide; (7) depositing one first polysilicon, which does not fill the above first trench; (8) forming one inter-polysi dielectric, which does not fill the above first trench, but forming gap; (9) forming one second polysilicon, which fill the above gap; (10) to the above second polysilicon, inter-polysi dielectric, first polysilicon and first dielectric performing polishing process to remove the above second polysilicon, inter-polysi dielectric and first polysilicon except the above first trench; (11) removing the above first dielectric to expose the above polysilicon, inter-polysi dielectric and first polysilicon, so as to form floating gate and controlled gate; (12) forming source and drain electrode.
Patent TW-422951-B (TW)
Title: Intelligent search method of telephone
Inventor: JANG JING-SUNG
IPC: G06F17/30
Filed: 1996-12-27
Granted: 2001-02-21
Abstract: The invention relates to an intelligent search method of telephone to quickly search the information by means of key word on line method. Firstly, prompts the users the search method such as using ""last name"" as the primary search target and ""first name"" as the secondary target. Users select and input the last name to the telephone. And then after searching, if the matched information about the last name is contained in data base, the information will be displayed. If there is no information which matches the last name, the next step is to input a specific key and a name into the telephone. After searching, the information will show up if the matching information concerning the last name and first name can be found in the data base.
Patent TW-533213-B (TW)
Title: Diester derivatives of omaciclovir, pharmaceutical composition and preparation thereof
Inventor: ENGELHARDT PER
IPC: C07D473/18
Filed: 1997-02-14
Granted: 2003-05-21
Abstract: Compounds of the Formula I where one of R1 and R2 is a valyl or isoleucyl ester, the other of R1 and R2 is -C(=O)C3-C21 alkyl or alkenyl, unsubstituted or substituted with oxo; and R3 is OH or H; and pharmaceutically acceptable salts thereof have utility as enhanced bioavailability antivirals against herpes and retroviral infections.
Patent TW-407136-B (TW)
Title: The preparation method of aluminum nitride
Inventor: JUNG SHIAN-LUNG
IPC: C01B21/072
Filed: 1997-03-11
Granted: 2000-10-01
Abstract: A synthesizing method of aluminum nitride powder, which is to mix the aluminum powder and the ammonium halide powder with suitable proportions before putting it into the container with openings or porous container or mold pressing to become suitable shape as the reactive tablets; this mixer or reactive tablets are placed in the closed chamber full of nitrogen, and heated to combust directly into aluminum nitride. As the ammonium halide produces gas after being heated and decomposed, the said gas causes countless porous channels inside the reactive mixer or reactive tablets making the nitrogen gas easy to penetrate and react with aluminum; besides, the ammonium halide salt has the function of catalyzing the nitrogenation reaction of aluminum; therefore, it could synthesizes high purity aluminum nitride at lower nitrogen pressure (1-10 atm).
Patent TW-346613-B (TW)
Title: Liquid crystal display device and method for driving the same
Inventor: ANZAI NORIO
IPC: G09G3/20
Filed: 1997-03-25
Granted: 1998-12-01
Abstract: A liquid crystal display device including a liquid crystal panel comprising: a plurality of row electrodes applied with a scanning signal thereon; a plurality of column electrodes disposed into interleaving with the plurality of row electrodes and applied with a display signal thereon; and a liquid crystal layer interposed between the row electrodes and the column electrodes for displaying an image by the effective voltage values between the row electrodes and the column electrodes at the intersections of the row electrodes and the column electrodes, the device comprising: a display data transformer for receiving input image data for one frame, for dividing a selection period for each row electrode in the frame into subframes of a number equal to or greater than a number of gray-scale bits representing a gray-scale level of the input image data, the scanning signal being applied to the row electrode during the corresponding selection period, and for generating binary display data in which respective binary data is associated with each subframe according to the gray-scale bits; a pulse width controller for controlling the division of the selection period in the display data transformer and for setting a respective subframe period independently for each subframe; and a pulse amplitude controller for transforming the binary display data by setting a respective voltage amplitude independently for each subframe according to the binary display data so as to generate a display signal having a respective voltage value set independently for each subframe.
Patent TW-353253-B (TW)
Title: Method for the generation of an output clock signal, which can be used for controlling a data output as a function of one of a plurality of input clock signals
Inventor: ALGER-MEUNIER MICHAEL
IPC: H04J3/06
Filed: 1997-06-06
Granted: 1999-02-21
Abstract: A method for generating a suitable output clock signal for controlling data output, the signal is dependent on one of several input clock signals, which are produced by inputting data via several input channels (U1 to U8), the method being characterized in that the input clock signal used to generate the output clock signal is selectively changed whilst generating the output clock signal if the input clock signal is not suitable or becomes less suitable for generating the output clock signal.