baber/WOPTO huggingface dataset:
Patent JP-S59191746-A (JP)
Title: Flame-retardant resin composition
Inventor: TAKAHASHI RIYOUJI
IPC: C08L77/00
Filed: 1983-04-13
Abstract: PURPOSE:To provide a flame-retardant resin compsn. which has excellent water resistance and does not emit toxic gas during combustion, by incorporating a polysiloxane-treated flameproof inorg. acid ammonium salt. CONSTITUTION:100pts. flameproof inorg. acid ammonium salt such as ammonium sulfate, 0.2-5pts. curable polysiloxane such as methylhydropolysiloxane and 0.05-0.5pts. curing accelerator such as dibutyltin distearate are dissolved or dispersed in a solvent such as trichloroethylene. The mixture is heated to 30-200 deg.C to evaporate the solvent and to form a cured polysiloxane film on the surface of the ammonium salt. 5-70% (based on the total quantity of compsn.) said treated salt is blended with a resin such as polyolefin resin or epoxy resin.
Patent JP-S58181706-A (JP)
Title: Method for recovering sulfur and hydrogen from hydrogen sulfide
Inventor: FUJII KINJIROU
IPC: C25B1/26
Filed: 1982-04-19
Abstract: PURPOSE:To recover hydrogen from hydrogen sulfide and to reutilize it by reacting the hydrogen suolfide with an iron salt soln. contg. tervalent iron ions to produce sulfur and a soln. contg. bivalent iron ions and electrochemically converting the bivalent iron ions into tervalent ions to generate hydrogen. CONSTITUTION:Gaseous H2S is blown into a soln. contg. ferric ions such as an FeCl3 soln. to deposit and separate sulfur. The concn. of the FeCl3 soln. is about 0.5-5molkg<-1>, and the reaction is caused at the temp. from ordinary temp. up to about 150 deg.C. The sulfur-free soln. contg. bivalent iron ions and an excess of hydrogen chloride is fed to the anode chamber of an electrolytic cell, and hydrogen is generated from the anode chamber by electrolytic oxidation. The resulting aqueous iron chloride soln. contg. tervalent iron ions discharged from the anode chamber is reutilized by a closed cycle system.
Patent JP-S51141381-A (JP)
Title: Tube type pressure cable
Inventor: NAGANO HIROO
IPC: H01B9/06
Filed: 1975-05-30
Abstract: PURPOSE: An efficient cooling is performed. 
     COPYRIGHT: (C)1976,JPO&Japio
Patent JP-2000261087-A (JP)
Title: Active device with three-dimensional light receiving wave guide circuit
Inventor: IMOTO KATSUYUKI
IPC: H01S5/026
Filed: 1999-03-11
Abstract: PROBLEM TO BE SOLVED: To increase efficiency of optical coupling, simplify a process, and lower cost by a method, wherein a forward current is injected between upper and lower face electrodes, and incident lights from one end face side of a polymer core layer are amplified in an active layer and are emitted from another end face side. SOLUTION: An active device amplifiers incident lights incident on a polyimide core layer 10-1 at the side of an incident light end face 12-1, so as to extract them as amplified lights in the direction of the arrow 18 from the side of an emitted light end face 12-2. A three-dimensional lights receiving wave guide part 35-1, an optical amplifying section 36, and a three-dimensional lights receiving wave guide part 35-2 are integrally constituted on an InP (n+) substance 1.  Polyimide core layers 10-1, 10-2 of the three-dimensional lights receiving wave guide parts 35-1, 35-2 which are provided on both sides of the optical amplifying section 36 have a three-dimensional structure of a substantially rectangular section, and are structured so tat the mode filed diameter is substantially equalized with that of the optical amplifying section 36, and optical coupling with the optical amplifier 36 is made to satisfactory.
Patent JP-H04299218-A (JP)
Title: Waveform recorder
Inventor: OTA AKIRA
IPC: G01D15/00
Filed: 1991-03-28
Abstract: PURPOSE:To improve operability by enlarging or lessening an output of a position computing element by changing over a measuring range of an input control element when a recording width set by a span regulating operation element exceeds a value which can be inputted to an A/D converter. CONSTITUTION:A measuring signal inputted to an input terminal 3 is inputted to an A/D converter 5 through an input control element 4 and converted into a digital signal. In a position computing element 6, the recording width and the recording position of output data of the converter 5 to be recorded on recording paper are computed in accordance with an output signal of a span and position regulating operation element of an operating element 8 and outputted to a recording head 7. In the head 7, a waveform of the measuring signal based on the output data of the converter 5 is recorded on the recording paper in accordance with the result of computation of the computing element 6. In a control element 9, a measured value of the input control element 4 is changed over and the output of the computing element 6 is enlarged or lessened in accordance with a change ratio of a measuring range, when the recording width set by the operating element 8 exceeds a value which can be inputted to the converter 5, and thereby a change in the recorded waveform on the recording paper is controlled to be small.
Patent JP-H11258770-A (JP)
Title: Mask pattern designing method and photomask
Inventor: KOTANI TOSHIYA
IPC: G03F1/36
Filed: 1998-03-16
Abstract: PROBLEM TO BE SOLVED: To easily determine the precise optimum size of an auxiliary pattern. SOLUTION: In the mask pattern designing method which uses a light source with exposure wavelength λ and designs the pattern of a photomask used to transfer a design pattern 1 with line width W" onto a wafer by a projection exposure device including a projection lens with a numerical aperture NA, the auxiliary pattern 4 generates for variation by sa'=saμλ/NA from the tip of a main pattern 3 corresponding as the mask pattern 2 to the design pattern 1 by conversion on the wafer is added to the main pattern 3 on a basis of standardized line breadthwise size value sa and a standardized line lengthwise size value sb predetermined so that a pattern tip position after transfer is finished as desired corresponding to standardized line width W=W'/(λ/NA) standardized with the exposure wavelength λ and numerical aperture NA,  where W' is the line width of the main pattern 3 by on-wafer conversion.
Patent JP-H02246856-A (JP)
Title: Vehicular brake oil pressure control device
Inventor: SUZUKI SHIGEKI
IPC: B60T8/28
Filed: 1989-03-17
Abstract: PURPOSE:To make it possible to obtain stable braking force without wrong action even at the time of braking suddenly by disposing a hydraulic shock absorber on the input side of a deceleration sensing type proportioning valve so as to prevent the inflow of brake liquid attended with sudden oil pressure rise. CONSTITUTION:The exit 12 of a hydraulic shock absorber 22 is connected to the input side of an oil pressure control valve 5 (a deceleration sensing type proportioning valve), and the output side of the oil pressure control valve 5 is connected to a rear wheel cylinder 2. The oil pressure P1 from a master cylinder 6 passes through a passage 27 and a through hole 13 from an entrance 11 and is transmitted to the exit 12. When the oil pressure P1 on the entrance side and the oil pressure P2 on the exist side rise, a stepped piston 14 moves toward the entrance 11 side by the sectional-area ratio between the large diameter part 15 and the small diameter part 16 of the stepped piston 14 so as to block the through hole 13. When the oil pressure on the entrance 11 side further rises, the stepped piston 14 moves toward the exist 12 side, so that the through hole 13 is opened and the oil pressure P2 on the exist side rises. The pressure on the entrance 11 side is gradually transmitted to the exist 12 side by repeating this action.
Patent JP-S59193232-A (JP)
Title: Preparation of gallium or gallium alloy
Inventor: YAMADA TOSHIHIRO
IPC: C22C1/02
Filed: 1983-04-15
Abstract: PURPOSE:To obtain Ga or Ga-alloy suitable for a semiconductive cooling apparatus inhibited from solidification in the winter, by heating Ga or the Ga-alloy in a liquid state to a specific temp. or more. CONSTITUTION:Ga or a Ga-alloy in a liquid state is heated to 40 deg.C or more and a solidification start temp. thereof is brought to a room temp. or less. For example, when the heating temp. is brought to 60 deg.C or more, the solidification start temp. comes to -20 deg.C or less. By using this Ga or Ga-alloy, a semiconductive cooling apparatus which is prevented from the solidification of Ga or the Ga-alloy even if operation is stopped in the winter and high in reliability can be obtained. In addition, this Ga(alloy) is easy to handle.
Patent JP-2000254449-A (JP)
Title: Base material for decomposing harmful or odor gas and device therefor
Inventor: OHORI SHINICHI
IPC: B01J23/16
Filed: 1999-03-11
Abstract: PROBLEM TO BE SOLVED: To improve the adsorbing and removing efficiency of harmful material by forming a photocatalyst layer formed of a coating material composed of a photocatalyst powder deposied with metallic powder having no photocatalytic action and consisting of core powder having photocatalytic ability, a photocatalyst powder having adsorbability and a binder on the surface of a base material. SOLUTION: The photocatalyst powder, on which the metallic powder having no photocatalytic ability itself is deposited, and the photocatalyst powder having adsorbability are incorporated into the core powder having the photocatalytic ability. The photocatalytic layer is formed by applying the coating material prepared by mixing both photocatalyst powders with the binder on the base material and burning them. For example, outdoor air from which dust is previously captured by a dust collecting means 6 is passed through the base material irradiated with light by a light irradiating means 7 via a fan 2 while being made in contact with the base material.  At this time, a part of the harmful material incorporated in the outdoor air being in contact with the base material 8 is decomposed and removed by the photocatalytic reaction, and is adsorbed in the base material 8, then the adsorbed harmful material is decomposed and removed by the photocatalytic reaction.
Patent JP-S61223751-A (JP)
Title: Electrophotographic sensitive body
Inventor: NAKAGAMA SHOJI
IPC: G03G5/082
Filed: 1985-03-28
Abstract: PURPOSE:To enhance photosensitivity, to prevent fatigue of a photosensitive body, to improve adhesion between the photoconductive layer and a substrate, and to obtain a clear image by decomposing a source gas contg. Si by irradiation of light and depositing Si, etc., on the substrate to form the photoconductive layer. CONSTITUTION:The source gas contg. Si is decomposed and Si is deposited on the substrate to form the photoconductive layer. As the source gas, one of SiH4, Si2H6, and SiF4 is used and when needed, H2 is used as a diluent, and it is preferred to form the photoconductive layer of a-Si:H by the photo-CVD method in a film deposition conditions of 0.1-10 Torr vacuum, 100-1000 mW/cm<3> light intensity, and 50-250  deg.C substrate temp. It is preferred to add a boron-contg. gas to said source gases. The a-Si:H formed by the photo-CVD method has no defects on the surface and not contaminated with impurities, and has sufficient sensitivity up to a long wavelength region. Since light intensity can be controlled uniformly on a large area without scattering of characteristics, and adhesion between the photoconductive layer and the substrate, it can be used for a photosensitive body using a flexible substrate, and it can be further enhanced in photosensitivity up to longer wavelength by addition of boron.
Patent JP-S57179737-A (JP)
Title: Flow cell
Inventor: HANAOKA NOBUAKI
IPC: G01N27/28
Filed: 1981-04-30
Abstract: PURPOSE:To obtain a flow cell for an ion electrode having no dead volume and being easy to prepare, by forming a sensitive film in a penetration hole of a laminar body and providing an inner liquid reservoir in said body so as to bring an inner liquid to contact with the sensitive film. CONSTITUTION:A penetration hole 42 for forming a sensitive film is provided on a thin plate 41 composed of the substance united in one body with the sensitive film chemically. The plate 41 is placed on a glass plate 43 and a solution of vinyl chloride, plasticizer and valinomycin dissolved in tetrahydrofran etc. is dropped into the hole 42. Further, the plate 43 is stripped off after drying and a support pipe 21 is fixed on the one side of the plate 41 by adhesives. The other side of the plate 41 is fixed to the block 31 provided with a groove forming a flow passage 32 and an inner liquid 23 is introduid in the pipe 21. In such a manner, a flow cell having no dead volume and no suspended bubbles is prepared easily.
Patent JP-S59191901-A (JP)
Title: Microwave circuit
Inventor: SAITOU TAKESHI
IPC: H01P3/08
Filed: 1983-04-15
Abstract: PURPOSE:To ensure the stable shielding performance by giving individual shielding to each microstrip circuit. CONSTITUTION:The electric shielding is given to a dielectric substrate 2 containing a microstrip MIC circuit with a shielding material 21. This shielding has holes 22 and 23 so that the MIC circuit can be controlled after shielding. This shielded MIC circuit is attached on an earth conductor 3 of another dielectric substrate 1 containing another MIC circuit. These two MIC circuits of both substrates 1 and 2 are electrically connected to each other with a connection pin 13. The substrate 1 is packaged into a chassis 14 and receives the electric shielding with addition of a cover 16. Thus the MIC circuit which has easily characteristic variation is partially shielded by itself. Therefore the characteristic difference is reduced between package of all circuits and that of a single unit of circuit. Thus, the stable MIC circuit is obtained.
Patent JP-H01239421-A (JP)
Title: Correcting method for thermal displacement of optical scale
Inventor: OKITOMO HIROSHIGE
IPC: G01D5/36
Filed: 1988-03-22
Abstract: PURPOSE:To enable accurate position detection by correcting a detection error based upon the difference in coefficient of thermal expansion and temperature difference between the optical scale and an object. CONSTITUTION:Graduations inscribed in the optical scale 5 whose one end is fixed pass a detection point and the passing graduations are counted by a counter 12 to detect a position. The detected position includes an error due to temperature variation, so a corrector 13 corrects it. The correction is performed according to the temperature value of the optical scale and a solid- state structure which are detected by detectors 15 and 16, and a corrected position 14 is outputted. Thus, the error caused by thermal variation is corrected and removed to enable the accurate position detection.
Patent JP-S63233548-A (JP)
Title: Die sorter probe card for semiconductor
Inventor: TSUJITA HAJIME
IPC: G01R31/26
Filed: 1987-03-23
Abstract: PURPOSE:To check a circuit stably, by making it possible to connect a board for a calibrating ball and the main body of a probe card through pin sockets. CONSTITUTION:In a main body 11 of a probe card, measuring probe fixing members comprise pin sockets 12. A board 21 for a calibrating ball is provided with pin sockets 22 facing the pin sockets 12 of the main body 11 of the probe card. A socket 23 for the calibrating ball is attached to the main surface on the opposite side with respect to the protruding side of the pin sockets 22. Electric wirings 24 are provided between the sockets 23 and 22. In order to check a circuit with the calibrating ball, the calibrating ball is attached to the socket 23, and the board 21 for the calibrating ball is coupled to the main body 11 of the card through the sockets 12 and 22. Then the specified checking is performed. After the checking, the sockets are disconnected. Then, measurements can be performed immediately.
Patent JP-S52148760-A (JP)
Title: Hinge
Inventor: SASAKI KOUJI
IPC: E05D11/10
Filed: 1976-06-04
Abstract: PURPOSE: To respectively hold opening and closing positions, by setting a tunnel-like through hole to one side fitting plate, and by forming a sphere body into said through hole through an elastic body such as a spring and the like so as to contact with other fitting plate with a stopping part, which stops said sphere, by press. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-H10261274-A (JP)
Title: Disk reproducing device
Inventor: NAGAI YUTAKA
IPC: G11B20/18
Filed: 1997-03-19
Abstract: PROBLEM TO BE SOLVED: To improve reliability in error correction processing by incrementing with a signal caused when a head of a block is detected, incrementing with the signal caused when the data in block are error corrected and generating an error correction start signal with a result obtained comparing both signals. SOLUTION: A demodulation means 8 sends a block head detection signal 11 to a demodulation counter 19 when it detects the head of a data block. The demodulation counter 19 increments a counter when it detects the block head detection signal 11. A RAM 12 stores the data before error correction and the data after error correction. When the error correction start signal 22 generated by a comparison means 21 is inputted, an error correction means 17 reads out the demodulation data in the RAM 12 to error correct. When the error correction is ended, the error correction means 17 generates an error correction end signal, and an error correction counter 20 increments the counter.
Patent JP-H067422-A (JP)
Title: Combination of suture and needle
Inventor: JIIN DABURIYUU KAMERAA
IPC: A61B17/06
Filed: 1993-03-03
Abstract: PURPOSE: To make it easy to tie up endoscopically a suturing knot, by fastening the first loop onto the basal part of a free tail end of a suturing thread at a slip knot having a knot pulling tail end, in which the suturing thread contains the second loop adjacent to the first loop and the free tail end having the basal part and a distal part. CONSTITUTION: A suturing thread 11 having the first loop 12 and the second loop 13 is provided with a free tail end 14 having a basal part 15 and a distal part 16. The first loop 12 of the suturing thread 11 is fastened to the free tail end of the suturing thread 11 at a slip knot 18, and the slip knot 18 terminates at a knot pulling tail end 19. When a needle has passed through the both sides of a cut-open part, the needle is then pulled so as to detach from the tissue up to which the slip knot 18 contacts with, and is stuck into the loops 12 and 13, respectively. When the needle is pulled, a diameter of the loop becomes smaller. When the loop has been knotted around the suture, the knot is locked by pulling both the needle and the knot pulling end 19 of the slip knot 18 to the opposite direction at the same time.
Patent JP-S55158134-A (JP)
Title: Converter
Inventor: SASAKI SATORU
IPC: C01G56/00
Filed: 1979-05-28
Abstract: PURPOSE: To form a homogeneous nuclear substance by pouring a nuclear substance-contg. nitric acid soln. after treating used nuclear fuel into a container provided with heaters and heating the soln. under reduced pressure while isolating the external atmosphere to uniformly heat the soln. as well as facilitate evaporation.  
     CONSTITUTION: Container 11 filled with nuclear substance-contg. nitric acid soln. is sealed in upper case 15 and lower case 23. After exhausting air in cases 15, 23 with vacuum pump 19 an electric current is supplied to heaters 12, 13. Water in the soln. is evaporated very efficiently, and the soln. is well agitated by convection and maintained at an almost uniform temp. all over. When the soln. temp. is raised to about 100°C at both upper and lower portions, and evaporation of water is finished, heating is carried out with heater 13 alone, and the current supply to heater 13 is stopped with a switch built in thermometer 18 at 350°C at which denitration is finished, forming a homogeneous cake. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S57181163-A (JP)
Title: Gate turn off thyristor
Inventor: AZUMA MINORU
IPC: H01L29/744
Filed: 1981-04-30
Abstract: PURPOSE:To prevent current concentration, by providing current control layers which control base current transversely flowing between element units on the second base region placed between the second emitter layers divided into a plurality in GTO divided into a plurality of element units. CONSTITUTION:A P type first emitter layer 21, N type first base layer 22 and P type second base layer 23 are successively laminated. N type second emitter layers 241, 242... divided into a plurality in mesa shape are arranged on the second base layer 23 to constitute a plurality of element units. N type layers 281, 282... as current control layers to control base current in transverse direction on the second base layer 23 placed between the second emitter layers 24. Thus, current concentration into a specific element unit is prevented on turn off.
Patent JP-H09255548-A (JP)
Title: Wrinkling suppressing agent
Inventor: MURASE TAKATOSHI
IPC: A61K8/00
Filed: 1996-03-22
Abstract: PROBLEM TO BE SOLVED: To obtain a wrinkling suppressing agent by using Thujopsis dolabrata or its extract as an active component. SOLUTION: This agent contains 0.0001-20wt.% (in terms of solid extract) of Thujopsis dolabrata (a plant of the family Cupressaceae) or its extract as an active component. The active component is properly compounded with anti- inflammatory agent, antioxidant, oil, humectant, ultraviolet absorber, alcohol, chelating agent, pH-modifier, antiseptic, thickener, colorant, perfume, etc., and prepared in the form of O/W-type or W/O-type emulsified cosmetic, cream, milky lotion, face lotion, oily cosmetic, pack, foundation, etc. The wrinkling suppressing agent has excellent action to suppress the formation of wrinkles caused by the irradiation with ultraviolet rays and is useful as an external preparation for preventing the aging of the skin, especially preventing wrinkle.  Thujopsis dolabrata is used as it is in the form of dried and pulverized leaf, twig, etc., or as an extract obtained extracting crushed leaf, twig, etc., with a solvent (e.g. ethanol).
Patent JP-H08264899-A (JP)
Title: Manufacture of gallium nitride semiconductor
Inventor: ISHIBASHI AKIHIKO
IPC: H01L21/205
Filed: 1995-03-24
Abstract: PURPOSE: To provide a vapor growth method of a high-quality single-crystal GaN layer. CONSTITUTION: GaN buffer layer 2 is deposited on a sapphire substrate 1 by metal organic vapor-phase epitaxy(MOVPE) at 600 deg.C by supplying trimethylgallium(TMG) and ammonium with hydrogen as a carrier gas. Then, the supply of TMG is stopped, temperature is increased to 1030 deg.C within the mixed atmosphere of ammonium and hydrogen, and further single-crystal GaN layer 3 is deposited by adding triethylgallium(TEG). Therefore, by switching a feed gas, a flat GaN buffer layer with less residual impurity can be deposited over a wide temperature range, the mixture of such impurity as carbon can be suppressed in the growth of the single-crystal GaN layer, and a GaN single crystal with an improved C-axis orientation property and a high crystallizability can be obtained.