Patent SG-11201810302Q-A (SG)
Title: Deep junction electronic device and process for manufacturing thereof
Inventor: MAZZAMUTO FULVIO
IPC: H01L21/265
Filed: 2017-05-31
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 07 December 2017 (07.12.2017) WIP0 I PCT iii11111111 111111111111111111111111111111111111111111111111111111111111111111111111111111111 (10) International Publication Number WO 2017/207653 Al (51) International Patent Classification: H01L 21/02 (2006.01) HOlL 21/268 (2006.01) H01L 21/265 (2006.01) (21) International Application Number: PCT/EP2017/063195 (22) International Filing Date: 31 May 2017 (31.05.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16172286.3 31 May 2016 (31.05.2016) EP (71) Applicant: LASER SYSTEMS & SOLUTIONS OF EU- ROPE [FR/FR]; 14-38 rue Alexandre, 92230 GENNEVIL- LIERS (FR). (72) Inventor: MAZZAMUTO, Fulvio; 151 bis rue Marcadet, 75018 PARIS (FR). (74) Agent: CHAUVIN, Vincent et al.; 32 me de l'Arcade, 75008 PARIS (FR). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) = (54) Title: DEEP JUNCTION ELECTRONIC DEVICE AND PROCESS FOR MANUFACTURING THEREOF 19 Fig.12 W O 20 17 / 207 65 3 Al (57) : The invention concerns a process for manufacturing a deep junction electronic device comprising the steps of: b) Depositing a layer (5) of non monocrystalline semiconductor material on a plane surface (9) of a substrate (1) of a monocrystalline semiconductor material; c) Incorporating inactivated dopant elements prior to step b) into said substrate (1) and/or, respectively, during or after step b) into said layer (5), so as to form an inactivated doped layer (7, 27); d) Exposing, an external surface (19) of the layer (5) formed at step b) to a laser thermal anneal beam (30), so as to melt said layer (5) down to the substrate (1) and so as to activate said dopant elements incorporated at step c); e) Stopping exposure to the laser beam so as to induce epi-like crystallization of the melted layer (5), so that said substrate (1) and/or, respectively, an epi-like monocrystalline semiconductor material, comprises a layer (17, 27) of activated doped monocrystalline semiconductor material.