Patent GB-1009596-A (GB)
Title: Improvements in or relating to matrices employing semiconductor diodes
IPC: H03K17/74
Filed: 1964-04-14
Abstract: 1,009,596. Semi-conductor diode switching circuits; circuits employing bi-stable magnetic elements. INTERNATIONAL BUSINESS MACHINES CORPORATION. April 14, 1964 [April 16, 1963], No. 15420/64. Headings H3B and H3T. The transient reverse conduction effect of a charge-storage diode is utilized in a switching arrangement for a data storage matrix. H3T. Diode gating circuits.-Fig. 2 shows how a line 3-5 of storage cores 1 can be selected under control of pulses on lines 13, 15. Normally, charge-storage diode 19 andconventional diodes 21, 23 are reverse biased. At time t 1  (Fig. 3) diodes 19, 21 are forward biased by a voltage pulse 33 on line 13 and a current pulse 35 on line 15. At time t 2 , diodes 19, 21 are reversed biased by a pulse 39 on line 15 so that the isolating diode 23 is turned on, enabling the charge-storage diode 19 to discharge so as to drive a pulse through line 3-5. Alternatively, diode 21 may have a recovery time equal to the rise time t 2 -t 2 <SP>1</SP> and diode 19 has a recovery time equal to or less than the duration of the drive signal 39 so that the leading and trailing edges of the pulse in line 3-5 are steepened as at 39<SP>1</SP>. If the recovery time of the isolating diode 23 is significant, but less than that of diode 19, bipolar pulses 39, 43 can be fed into line 3-5 so as to effect sequential reading and writing into the cores 1. H3B. Data storage matrices.-As shown in Fig. 1, the appropriate writing line 5 is selected by feeding voltage pulses along the appropriate line 13 of array W and current pulses along the appropriate line 15 so as to turn on the appropriate diode gate 17 as described above, which feeds a half-amplitude pulse along writing line 5. The appropriate core is selected by bit drivers 9. The cores are read similarly by a full-amplitude pulse on one of the lines 3 under control of an array of gates R. In Fig. 4 (not shown), common read/write lines are employed as in Fig. 2 and a common isolating diode 23 is employed for each row of gates 17. In Fig. 5 (not shown), the diode 21 of each gate 17 is replaced by a resistor and a common diode 21 is connected in line 13. 1,009,623. Ultrasonic wave couplings. AEROPROJECTS Inc. June 22, 1962 [June 28, 1961], No. 24198/62. Heading H4J. [Also in Division B3] A coupling member in an ultrasonic welding or extrusion apparatus comprises a plurality of flexible wires or ribbons. A piezo-electric or magneto-strictive transducer 12 (Fig. 1) is carried in a mount 26 of the type described in Specification 877,966 (Group XXXIX) and has metallurgically attached thereto a coupling member 20, 36. The ribbons 58 which may be made of "Monel" (Registered Trade Mark) are metallurgically secured at one end in a notch 38 of the coupler and at their other ends in tangential slots 56 (Fig. 2) or radial slots (Fig. 7) of a flange 54 (Fig. 1) integral with a probe 46 which, in conjunction with work-holder 44, serves to weld together metal plates 40, 42. A mathematical discussion on the caculation of the wavelength of vibrations in the ribbons in terms of the radius of curvature and the crosssectional dimensions of the ribbons is given in the Specification from which it transpires that all of the ribbons should be either an odd or an even number of half wavelengths long although due to the different wavelengths in ribbons having differing radii of curvature their actual physical length will not in general be the same. The position (in terms of wavelength) of the flange 54 relative to the free or working end 53 of probe 46 and the part 52 thereof where it enters a massive block 48, in conjunction with the method of attachment of ribbons 58 to the flange, governs the type of vibration, e.g. torsional or longitudinal &c. of the probe and all these factors are discussed. In an extrusion apparatus (Fig. 8) the ribbons 86 are attached to an end face of a hollow cone-shaped container 92 which has a disc 110 screwed into the bottom part thereof. A cylinder 104 containing a ram 108 is located above chamber 112 which contains the material to be extruded. The piezoelectric transducer may comprise quartz, barium titanate or lead zirconate.