baber/WOPTO huggingface dataset:
Patent KR-20000018367-A (KR)
Title: Fabricating method of liquid crystal display
Inventor: BAE SEONG SIK
IPC: G02F1/1362
Filed: 1998-09-01
Abstract: PURPOSE: A method of fabricating a liquid crystal display is provided to prevent a surface of a protecting layer from being rough although using a photosensitive acryl resin as the protecting layer and suppress generation of an undercut phenomenon in a gate insulating layer. CONSTITUTION: A method of fabricating a liquid crystal display comprising the steps of forming a switching device on a transparent substrate, forming a photosensitive protecting layer on the transparent substrate where the switching device is formed, exposing and developing the protecting layer to form a contact hole where at least one terminal of the switching device is exposed, etching particles of the protecting layer remaining on at least a bottom surface of the contact hole using one etchant selected from a group consisting of CF4/H2, CxFy/H2, CxFy/CxFyHz, CxFy/Hz/H2, and CxFyHz gas groups, and forming a pixel electrode which is contacted with one terminal of the switching device through the contact hole and is formed on the protecting layer.
Patent KR-20000018645-A (KR)
Title: Moment water pressure balancing device of boiler
Inventor: CHOI SOUNG WHAN
IPC: F24H9/00
Filed: 1998-09-03
Abstract: PURPOSE: A moment water pressure balancing device of a boiler is provided to prevent a hot water copper coil from being damaged by removing impact to the coil. CONSTITUTION: A moment water pressure balancing device connects a water supplying line(11) that supplies water to the water inlet of a hot water copper coil(10) and a hot water line(12) that discharges hot water through the water outlet of the hot water copper coil, with a connecting pipe(20), and installs a pressure difference switch(30) that is switched by the pressure difference between the water supplying line and the hot water line, on the center of the connecting pipe. Also, the pressure difference switch forms a lower body(32) to be decomposed as an upper body(31) and a hot water supplying way(32a) which are formed by a cool water supplying way(31a) penetrated into the inner center, are penetrated into the inner center. The hot water supplying way is switched by a covering unit(34) that is elastically supported by a spring(33).
Patent KR-19990030309-A (KR)
Title: 반도체장치
IPC: H01L27/10
Filed: 1998-09-30
Abstract: 메모리셀부 및 셀렉터부의 트랜지스터 특성을 균일화할 수 있는 반도체 메모리를 구비하는 반도체 장치를 제공한다. 
     메모리셀 어레이의 메모리셀부 (11 및 13) 에는 N+ 확산층 (14) 및 게이트전극선 (15) 이 동일 선폭, 등간격으로 배치되어 있고, 셀렉터부 (12) 에는 N+ 확산층 (14) 및 게이트 전극선 (15) 이 등간격의 관계로 배치되어 있지는 않지만 셀렉터 (12) 에는 N+ 확산층 (14) 의 종단에는 각각 대응하는 더미 N+ 확산층 (16a) 이 부가되어 배치되어 있으며, 또 메모리셀부 (11 및 13) 의 N+ 확산층 (14) 에 대응하여 빈 영역으로 존재하고 있던 영역에는 더미 N+ 확산층 (16b) 이 부가되어 배치되어 있다.     이로 인해, N+ 확산층의 레지스트 패턴이 설계패턴대로 형성되어 메모리셀 트랜지스터 또는 셀렉터 트랜지스터의 특성이 균일화된다.
Patent KR-20000025034-A (KR)
Title: Method for measuring evenness of nonwaven fabric
Inventor: JEONG SUNG HUN
IPC: G01B11/30
Filed: 1998-10-02
Abstract: PURPOSE: A method is provided to evaluate evenness of novena fabric rapidly to control production processes with a feedback of the evaluation result by calculating an average value, a histogram, and a variation coefficient. CONSTITUTION: An image input is carried out by a CCD camera(14). The light from the CCD camera(14) is irradiated on novena fabric and an amount of light reflected from a surface of the novena fabric is divided into pixels for measurement. Pre-processing is performed by leveling a histogram and removing an image noise. An image analysis is carried out wherein an average value, a histogram, and a variation coefficient are calculated from restructured image data. The leveling of the histogram is carried out by leveling the brightness distribution in 4 to 256 steps.
Patent KR-20000025111-A (KR)
Title: Apparatus for generating non-thermal plasma
Inventor: PARK WON GYU
IPC: H05H1/00
Filed: 1998-10-08
Abstract: PURPOSE: An apparatus for generating non-thermal plasma is provided to separate an anode from a cathode in a state of alternating current. CONSTITUTION: An apparatus for generating non-thermal plasma comprises: a transformer(10) for converting voltage of applied alternating current power supply into high voltage; and a diode(30) for continuing current in one direction so that a dielectric, covering a conductor and both sides of the conductor as a dielectric barrier covering the both sides of the conductor, can form at least two more layers and an anode plasma can be formed on one side of the dielectric, and a cathode plasma can be formed on the other side of the dielectric, to generate the plasmas by using high voltage from the transformer(10). The apparatus for generating the non-thermal plasma is utilized to indirectly inject non-thermal plasmatic air into a water process, by generating the non-thermal plasmatic air from compressed air supplied from the outside.
Patent KR-20000027134-A (KR)
Title: Organic acid treating agent for laver farming
Inventor: KWAK HYO SUP
IPC: A01N31/00
Filed: 1998-10-27
Abstract: PURPOSE: An organic acid treating agent for laver farming is provided which eliminates various algae and fungi so that laver can absorb nutrients abundantly and the sea contamination can be prevented. CONSTITUTION: The organic acid treating agent contains trichloroacetic acid and has pH range of 0.01-4, and further consists of citric acid or malic acid or mixture thereof, and it has no concern about polluting environment and constructing the ecosystem and also provides similar exterminating effect that of hydrochloric acid.
Patent KR-20000027359-A (KR)
Title: Method for manufacturing a body contact silicon on insulator
Inventor: LEE JONG WOOK
IPC: H01L21/76
Filed: 1998-10-28
Abstract: PURPOSE: A method is provided to remove the floating body effect, enhance punch-through characteristics, and reduce a junction leakage current by securing an exact impurity distribution. CONSTITUTION: A silicon substrate(20), a burial insulator layer, and a upper silicon layer(22)are provided on a silicon on insulator wafer. A trench(14) is formed on the upper silicon layer(22). An electric field cut-off ion injection region(15) is formed on the upper silicon layer(22) of a lower portion of the trench(14). An insulator is buried in the trench(14). A MOS transistor and a well electrode for adjusting a channel potential of the MOS transistor are formed on the upper silicon layer(22). An initial thickness of the upper silicon layer(22) ranges from 150 to 300nm.
Patent KR-20000028355-A (KR)
Title: Synthesis method of cyclopentadec-2-enone useful in synthesizing muscone
Inventor: KIM YONG HAE
IPC: C07C49/607
Filed: 1998-10-31
Abstract: PURPOSE: A process for producing cyclopentadec-2-enone as a useful intermediate for the synthesis of muscone as an aromatic component of natural musk is provided which can produce the title compound in high purity and yield without purification processes. CONSTITUTION: A process comprises the steps of (a) producing 2-phenyl selenyl cyclopentadecanone by reacting cyclopentadecanone with diphenylselenide and selenium dioxide in the presence of an acid and (b) producing cyclopentadec-2-enone by reacting 2-phenyl selenyl cyclopentadecanone with an oxidant in the presence of a base. The acid is a Lewis acid such as sulfuric acid or trifluoroboron.diethylether(BF3.OEt2), the oxidant is hydrogen peroxide, peroxybenzoate, methachloroperbenzoic acid or oxone and the base is pyridine or imidazole.
Patent KR-20000031148-A (KR)
Title: Interleaver
Inventor: PARK DONG JO
IPC: H04L27/30
Filed: 1998-11-03
Abstract: PURPOSE: An interleaver is provided to perform a write and a read operation by using only one memory. CONSTITUTION: An interleaver comprises a memory(300) and a pilot symbol generation portion(500). The memory writes input data during a predetermined time, reads the written data during a predetermined time, and outputs the read data. The pilot symbol generation portion outputs a pilot symbol added to the data output from the memory. The pilot symbol output time of the pilot symbol generation portion and the memory write time for the input data are synchronized by a timing signal. The interleaver further comprises a switch portion(600) for intersecting the pilot symbol and the output data.
Patent KR-20000031790-A (KR)
Title: Method for composing command set in bus system
Inventor: JEONG BYUNG SEON
IPC: H04L12/40
Filed: 1998-11-10
Abstract: PURPOSE: A method for composing a command set in a bus system is provided to reduce the amount of command set by making a command set as a command combination of a basic function and controlling new functions as the command combination. CONSTITUTION: A method for composing a command set in a bus system the steps of composing a reference command as a layer 0; combining the command of the layer 0 and generating an execution command of a layer 1; and combing the commands of the layer 0 or the layer 1 and generating new execution command by the combination. The command of the layer 1 is set to a command packet format and its trailer whether the command of the layer 1 is a continuous command or a single command.
Patent KR-20000033197-A (KR)
Title: Semiconductor device and fabricating method thereof
Inventor: JANG YEONG SU
IPC: H01L21/336
Filed: 1998-11-20
Abstract: PURPOSE: A semiconductor device having a bipolar junction transistor(BJT), a complementary MOS(CMOS) transistor and a double diffused MOS(DMOS) transistor, and a fabricating method thereof are provided to improve characteristic of each unit device. CONSTITUTION: A semiconductor device includes a bipolar junction transistor(BJT), a complementary MOS(CMOS) transistor, and a double diffused MOS(DMOS) transistor all of which are formed on a same substrate(100) of lightly-doped p type. The DMOS transistor(A) has a bottom layer(160A) of heavily-doped p type underneath a body region(240A) thereof. In addition, the CMOS transistor(B) has a bottom layer(160B) of heavily-doped p type underneath both a source region(320A) and a drain region(320B) thereof, and the BJT(C) has a bottom layer(160C) of heavily-doped p type underneath an intrinsic base region(240B) thereof. Accordingly, a turn-on of parasitic bipolar transistor is restrained and a breakdown voltage in the CMOS transistor or the BJT is increased.
Patent KR-20000039545-A (KR)
Title: Apparatus for generating ultra shf
Inventor: KIM HYUNG SEOK
IPC: H03B13/00
Filed: 1998-12-14
Abstract: PURPOSE: An apparatus for generating ultra SHF(Super High Frequency) is provided to simplify structure and be easily fabricated by connecting the center of input/output hollows to feedback electromagnetic energy. CONSTITUTION: An apparatus for generating ultra SHF comprises a beam tunnel(27), an input hollow(23), an output hollow(25), a central output coupler(29) and a rod type inner coupler(31). A ring type electron beam(21) passes through the beam tunnel(27). The input hollow(23) generates beam modulation phenomenon causing the beam to be fluxed. The output hollow(25) converts the energy of the electron beam passed through the tunnel into electromagnetic energy. The central output coupler(29) is mounted in the output hollow to output a portion of the electromagnetic energy. The rod type inner coupler(31) is mounted to connect the center of the input/output hollows to transfer a portion of the electromagnetic energy to the input hollow.
Patent KR-20000039697-A (KR)
Title: Method of interconnection formation
Inventor: SHAI NIEN YOU
IPC: H01L21/28
Filed: 1998-12-15
Abstract: PURPOSE: A method of metal interconnection is provided to prevent failure of device resulting from erosion. CONSTITUTION: Impurity is added to oxygen plasma to reduce accumulative charges in exposed metal plug(200). The amount of the impurity is more than that of oxygen. The plasma(220) containing oxygen and impurity is used to eliminate a photoresist layer(218). After the elimination, the wet cleaning process in which alkaline solution is used follows. During the processing, the exposed metal plug(206) that loses charges does not easily wear off. Therefore, contact resistance between the metal plug(206) and metal line(210) does not increase due to erosion. Another way for erosion prevention is that one should eliminate the photoresist layer(218) out of the plasma(220) containing oxygen and treat the exposed metal plug(206) with pure water vapor plasma.
Patent KR-20000041502-A (KR)
Title: Charnel house for family
Inventor: KIM YEONG SEOK
IPC: E04H13/00
Filed: 1998-12-22
Abstract: PURPOSE: A charnel house for a family is provided to efficiently use the old tomb area which takes up lots of land for each dead person and where people should regularly cut the grass. CONSTITUTION: A charnel house for family comprises the steps of; setting granite on the ground surface of tomb area; square, setting some base blocks being connected by anchors; arranging a base column(3) on each corner of the base blocks; inserting a rectangular marble block into the slot being worked to a base column(3); putting an ashes box being divided into around 16 sections which are connected by anchors on the ground surface, inside base columns; setting a cover(6) on the ashes box and other ashes boxes on a cover(6), thereby more ashes boxes can be layered; setting a final cover(6) in which width and height are not the same as the previous covers'ones but the same as the base block's ones on a final ashes box using a triangle-shaped granite being divided into several pieces and where a lifting bracket is attached as a roof to make easy for people to add more ashes additionally. Therefore, saving lots of land by reposing many people's ashes in one charnel house and no cutting grass are provided.
Patent KR-20000041976-A (KR)
Title: Current observing method
Inventor: PARK HO
IPC: G01R19/00
Filed: 1998-12-24
Abstract: PURPOSE: A current observing method is provided to detect a driving current of a load simply with no power loss. CONSTITUTION: In a current observing method, a micro computer judges whether a drive power is applied(300). If the drive power is not applied, a switch is off so as to maintain a physical interruption state of a power supply part and a load(302). If the drive power is applied, the micro computer is initialized by the drive power and is switched into an active mode. At the same time, a current varied amount value(Vd) is reset(304). The switch is on so as to supply a power from the power supply part to the load(306). The micro computer judges whether a current variation amount from an analog-to-digital converter is '0'(308). If the current variation amount is '0', the procedure goes to the step(300). If the current variation amount is not '0', whether the detected current variation amount has a positive value is judged(310). If so, the current variation amount is accumulated and added, and the accumulated value is stored(312). The stored current variation amount is displayed(316). If the detected current variation amount is a negative value, the current variation amount is accumulated and subtracted, and the accumulated value is stored(314). The stored current variation amount is displayed(316).
Patent KR-20000043801-A (KR)
Title: Method for producing hot rolled steel plate coated with melted zinc of steel plate containing silicon
Inventor: CHOI JIN WON
IPC: C23C2/06
Filed: 1998-12-29
Abstract: PURPOSE: A method is provided to produce a hot rolled steel plate coated a melted zinc by using a steel plate contained a silicon as a different coating element without a non-coating generated by enriching the silicon on a surface of an iron substrate. CONSTITUTION: An acidifying process and a preliminary coating process are omitted. A scale layer of a hot rolled steel plate is selectively reduced during maintaining a thermally treating temperature within 650-750°C, a maintaining time over 60seconds, and a concentration of hydrogen over 30% in a reduction heating furnace. A coating of melted zinc is performed after forming as a specific scale composition by setting a controlled cooling speed within 5-25°C/sec. Thereby the hot rolled steel plate coated the melted zinc of a steel plate contained a silicon is produced.
Patent KR-20000046238-A (KR)
Title: Automatic transferring and returning method of synchronous digital hierarchy digital cross-connect system
Inventor: LEE YONG HYOK
IPC: H04M3/22
Filed: 1998-12-31
Abstract: PURPOSE: An automatic transferring and returning method of the SDH(Synchronous Digital Hierarchy) DCS(Digital Cross-connect System), in case that a failure is generated in a main unit which consists of 7 units, including 2 spare unit, in a DS-1 unit, is provided so as to be automatically transferred and returned to the main unit if a failure unit is operated in normal condition while using the 2 spare units as a main unit to protect the failure unit. CONSTITUTION: A control part determines whether the removing or failure of a main unit is generated(S10). In case that the control part determines the failure has been generated, the control part determines whether the main unit satisfies a transfer restrictive condition(S11). In case that the control part determines the main unit satisfies the transfer restrictive condition, the control part determines whether the main unit satisfies a transfer condition(S12). In case that the control part determines the main unit satisfies the transfer condition, the control part redefines transfer associated parameters and transfers the failure unit to a spare unit(S13).
Patent KR-20010008448-A (KR)
Title: Method for forming gate electrode of semiconductor device
Inventor: HONG BYEONG SEOP
IPC: H01L21/336
Filed: 1998-12-31
Abstract: PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to make a uniform density between a tungsten silicide layer and the phosphorus-doped polysilicon layer by implanting a phosphorus in the tungsten silicide layer, to prevents a phosphorus diffusion, and effectively restrict a gate deflection. CONSTITUTION: A gate oxide layer(20) and a doped polysilicon layer(30) are sequentially deposited on a semiconductor substrate(10). A tungsten-silicide layer(40) and a capping-poly layer(50) are deposited on the doped polysilicon layer. Ion implantation process is made on a total surface of the capping poly layer, and thus an ion is implanted in the tungsten silicide layer. In addition, a driving force occurring a phosphorus diffusion is removed, and thus a phosphorus diffusion is prevented.
Patent KR-19990067299-A (KR)
Title: 직접 냉각 주조용 유출 감지기
IPC: B22D11/16
Filed: 1996-10-30
Abstract: 본 발명은 용융 금속의 직접 냉각 주조시 유출을 감지할 수 있는 감지기로서, 더욱 상세하게는 주물(23)의 외부 표면에 용융 금속 (24)의 존재여부를 감지하기 위한 감지수단(19, 20)을 포함하는 것에 관한 것이다.  대부분의 유출은 주형(10)의 출구 근처에서 일어나므로, 상기 감지수단(19, 20)은 주형의 출구에 직접 또는 인접하여 위치시키는 것이 바람직하다.  이러한 감지 수단으로는 적외선 감지기, 가압관, 소음 측정기 및 전기적 감지기 등을 사용할 수 있다.  또한, 폴리비닐리딘 플루오라이드(polyvinylidene fluoride, PVDF)로 된 감광 필름 같은 감지 수단을 사용하는 것도 바람직하다.  그리고, 감지기는 경보회로 또는 조절회로의 일부분을 구성할 수도 있다.
Patent KR-19990067558-A (KR)
Title: 독립적이며 섹터화된 서비스 영역들에 광대역 디지털 데이터를전달하기 위한 멀티채널 무선 전송 시스템
IPC: H04H20/72
Filed: 1996-11-12
Abstract: 섹터화에 의한 방송을 채용하고, 이용가능한 채널들의 신호들(14)을 포맷된 독립 디지털 비트열들 집합으로 다중화(16)함으로써 방송신호의 유효 대역폭을 감소시키는 일방향 및 양방향 멀티채널 무선 전송 시스템으로서, 상기 각 비트열은 시스템 프로그램 제공업자(10)에 의해 제공되는 이용가능한 채널들의 전부 또는 일부를 포함한다.  상기 독립 비트열들은 점대점 전송(19) 방법을 사용하여 송신기 탑들로 전송된다.  송신기 탑들은 비트열들을 위상변조(20)하고 증폭하여, 독립적인 변조 신호들 집합을 발생한다.  각 송신기 탑은 이웃 지역들과 서로 다른 주파수 및 반대되는 편광으로 섹터화된 서비스 영역에 변조 신호들을 방송(41)하기 위한 섹터화된 안테나를 포함하여, 각 서비스 영역은 서로 다른 독립적인 변조 신호들 집합을 받아들이게 된다.  각 가입자 사이트(49)는 수신된 변조 신호를 복조하고, 디멀티플렉싱하며, 한 채널을 선택한다.
Patent KR-19990071822-A (KR)
Title: α-케토에스테르 및 α-케토아미드의 아실화된 에놀 유도체
IPC: C07D295/20
Filed: 1996-11-04
Abstract: 본 발명은 α-케토에스테르 및 α-케토아미드의 아실화된 에놀 유도체에 관한 것이다.  본 발명의 화합물은 공지된 엘라스타제 억제제에 대한 프로드럭 또는 그 자체로 엘라스타제 억제제로서 낭포성 섬유증 및 기종을 포함한 각종 염증 질환의 치료에 유용하다.
Patent KR-19990077046-A (KR)
Title: 화상 재생 장치, 프로젝터, 화상 재생 시스템 및 정보 기억 매체
IPC: H04N5/445
Filed: 1997-11-06
Abstract: 유저마다 유저 고유의 사용 환경 데이터를 선택 사용 가능하게 설정 기억함으로써, 재사용시에 사용환경 데이터의 재설정의 수고와 시간을 단축할 수가 있는 프로젝터를 제공한다. 
     컴퓨터에서 입력되는 영상신호를 표시화상에 대응해서 샘플링하여 재생하는 액정 프로젝터가 제공된다. 
     이 액정 프로젝터는 유저 고유의 사용환경 데이터를 선택 가능하게 기억하여(S20), 다음회의 사용시에는 기억된 사용된 사용 환경 데이터를 선택하여 선택된 사용 환경 데이터에 의거해 입력되는 영상신호를 재생한다(S18, 22).
Patent KR-19990082633-A (KR)
Title: 반도체 웨이퍼를 에칭하기 위한 방법과 장치
IPC: C04B41/53
Filed: 1997-02-14
Abstract: 플라스마 처리 체임버(plasma processing chamber)에서 웨이퍼 스택의 TiN 레이어(TiN layer)를 에칭하는 방법.  본 발명은 제 1 화학을 이용하여 TiN 레이어(TiN layer)를 통하여 적어도 부분적으로 에칭하는 단계를 포함하며, 제 1 화학은 TiN 부식액, 희(稀) 가스 및 중합체를 형성하는 화학 제품 등을 포함하는 것을 선호한다.  하나의 실시예에서, TiN 부식액은 Cl 2 이고, 희(稀) 가스는 아르곤이고, 중합체를 형성하는 화학 제품은 CHF 3 .
Patent KR-20000005373-A (KR)
Title: Method and apparatus for product recovery of polyolefins
Inventor: MCHANEY STEPHEN C
IPC: C08F6/00
Filed: 1997-04-01
Abstract: PURPOSE: A device and a method for collecting a high molecular weight amorphous poly alpha olefin are provided. CONSTITUTION: A method and apparatus for product recovery of polyolefins, particularly high molecular weight amorphous poly alpha olefins, wherein the use of water during the method is significantly decreased and wherein the intermediate stage of storing and drying the chunk form of the polyolefin is eliminated. Polyolefins produced in a reactor are heated and mixed by sigma blades in a kneader-extruder to remove any unreacted monomer(s). The polyolefin material in a liquid form is then transferred directly to an extruder to further remove any unreacted monomer(s) and catalyst(s). The invention further includes a method of measuring the inventory in a vessel using a gas of known quantity and known thermodynamic properties.
Patent KR-20000010893-A (KR)
Title: Camptothcin backbone compound separated from mappia foetida and its use as therapeutic agent and drug substrate
Inventor: BOMBARDELLY EGIO
IPC: C07D209/00
Filed: 1997-05-02
Abstract: PURPOSE: Camptothcin or foetidine I and foetidine II are new substrates for producing new homologues. Specific solubilities of the compounds are very important because injection of the compounds can be produced without the production of derivatives. CONSTITUTION: The invention relates to the separation and the semisynthesis of alkaloids designated as formula (1) and their use as drug and for preparation of compounds having anticancer and antiviral activity. And the invention relates to alkaloids having camptothcin backbone separated from Mappia foetida or alkaloids having camptothcin backbone obtained by the semisynthesis from the alkaloids. Mappia foetida is a plant growing spontaneously in the India Peninsula, and contains camptothcin, medicine, foetidine I and foetidine II in seeds and other several parts.
Patent KR-20000011050-A (KR)
Title: Liquid chromatographic column
Inventor: CONROY CHRISTIN M
IPC: B01D61/00
Filed: 1997-04-28
Abstract: PURPOSE: A chromatographic cartridge assembly including a cartridge having a flexible wall which forms the polymeric hydrophilic chromatographic medium included in the chamber. CONSTITUTION: The chromatographic cartridge assembly(12) possesses: a cartridge(22) having a flexible wall and forming a chamber; a porous polymeric hydrophilic chromatographic medium included in the chamber, having the acting pressure more than three bars; the flexible wall having transfer diaphragm compressing the chromatographic medium; the chromatographic cartridge assembly(12) having a flow distributor, a flow collector and a sieve formed with the hydrophilic matter; a compression module(20) forming a compression chamber including a pressurizing fluid; and the pressuring fluid acting to move the flexible wall of the cartridge assembly(12).