baber/WOPTO huggingface dataset:
Patent JP-H03285024-A (JP)
Title: Cold rolled steel sheet excellent in press formability
Inventor: HOTTA TAKASHI
IPC: C21D9/46
Filed: 1990-03-30
Abstract: PURPOSE:To obtain a cold rolled steel sheet in which sliding characteristic is improved and press breakage is prevented and which has superior press formability by providing an oxide film to the surface of a cold rolled steel sheet. CONSTITUTION:An oxide film is provided to the surface of a cold rolled steel sheet. It is preferable that this oxide film is composed essentially of Fe2O3 and Fe3O4 and formed by 2-100mg/m<2> per side. This oxide film can be formed by maintaining the dew point of atmosphere at 5-70 deg.C in a temp. region of <=300 deg.C sheet temp. in the course of cooling at the time of applying box annealing to the cold rolled steel sheet. Owing to this oxide film, sliding characteristic in an oil film-free state can be improved and an oil film can be held in a superior state, and further, the increase in frictional force under high bearing can be inhibited. By this method, the cold rolled steel sheet excellent in press formability and causing no contamination to a press working environment can be obtained.
Patent JP-H07267828-A (JP)
Title: O/w-type cosmetic for eyelash
Inventor: TOMOMASA SATORU
IPC: A61K8/00
Filed: 1994-03-31
Abstract: PURPOSE:To provide an O/W-type cosmetic for eyelash excellent in resistances to water, sweat, sebum and oil, and applicability, good in adhesivity of fibers to the eyelash and giving highly durable makeup. CONSTITUTION:This 0/W-type cosmetic for eyelash contains water, fibers and a water-soluble polymer in the outer phase and a volatile oil component, an oil-soluble resin and a colorant having hydrophobic surface in the inner phase. The ratio of the outer phase is 30-95wt.% (especially 50-90wt.%) and that of the inner phase is 5-70wt.% (especially 10-50wt.%). The fiber is e.g. 0.5de nylon imitation wool, 3de nylon imitation wool, etc., and its amount is 0. 5-12wt.% based on the cosmetic. The water-soluble polymer is e.g. PVA and gum arabic and its amount is preferably 0.01-10wt.% based on the cosmetic. The volatile oil component is a hydrocarbon oil or a silicone oil having a boiling point of 60-260 deg.C measured at room temperature and the oil-soluble resin is an organic silicone resin having units expressed by formula (R is a 1-6C hydrocarbon group or phenyl; (n) is 1.0-1.8) on an average.
Patent JP-S63250420-A (JP)
Title: Manufacture of grain-oriented magnetic steel sheet having extremely high magnetic flux density
Inventor: YOSHITOMI YASUNARI
IPC: H01F1/16
Filed: 1987-04-07
Abstract: PURPOSE:To stably manufacture a grain-oriented magnetic steel sheet having high magnetic flux density, by adding a temp.-fall stage to the final finish annealing of a silicon steel sheet and specifying the heat-cycle conditions of this final finish annealing. CONSTITUTION:A hot-rolled plate of silicon steel consisting of, by weight, 2.5-4.0% Si, 0.03-0.10% C, 0.010-0.065% solAl, 0.0010-0.0150% N, 0.02-0.30% Mn, 0.005-0.040% S, and the balance essentially Fe is used as a stock. This steel plate is subjected to a single cold rolling including forced final cold rolling at >80-95% draft or to two-time or more cold rollings, while subjected to process annealing between the cold rolling stages. Subsequently, the resulting cold-rolled sheet is subjected to carburizing annealing and further to application of annealing release agent to undergo final finish annealing. The final finish annealing is carried out by means of a heat cycle where the steel sheet is first heated from 700 to 900-1,050 deg.C at 2-50 deg.C/hr temp.-rise rate, subjected to temp. fall down to 700-1,000 deg.C next, and further heated to a finish-annealing temp. of 1,100-1,300 deg.C at 2-50 deg.C/hr temp.-rise rate.
Patent JP-H07289900-A (JP)
Title: Catalyst
Inventor: ANDORIYUU MAAKU WAADO
IPC: C01B3/48
Filed: 1995-04-10
Abstract: PURPOSE: To obtain a high temperature shift catalyst having remarkably enhanced catalytic activity by pelletizing and reducing a catalyst precursor containing oxides of iron and chromium and including particles having a specified aspect ratio and a specified average (by weight) maximum dimension. CONSTITUTION: A catalyst precursor containing oxides of iron and chromium and including particles having an aspect ratio of at least 2 and at least 500 nm average (by weight) maximum dimension is pelletized and reduced to obtain the objective catalyst pellets useful particularly in a high temperature shift reaction which is carried out by passing a gaseous feedstock containing carbon monoxide and steam and, frequently, another component such as hydrogen, carbon dioxide, methane, nitrogen or argon through a catalyst pellet bed at an inlet temperature of about >300 deg.C, usually about 300-370 deg.C under a pressure from atmospheric pressure to about 100 bar (absolute pressure).
Patent JP-S62241890-A (JP)
Title: Diameter-controlling method for semiconductor single crystal
Inventor: TAKEDA TOMOHIKO
IPC: C30B15/26
Filed: 1986-04-14
Abstract: PURPOSE:The bright ring occurring on the boundary between the growing single crystal and the melt is recorded on TV to measure its diameter from the image whereby the diameter of the single crystal is precisely monitored to conduct the exact control. CONSTITUTION:In the oven 1, the seed crystal 15 which is held through the seed chuck 12 with the pulling-up shaft 6 is dipped in the melt 14 of crystal feed stock in the crucible 7 heated with the heater 8, then pulled up to allow a single crystal 13 to grow. On the growth of the single crystal 13, the bright ring between the single crystal 13 and the melt 14 is recorded through the window 11 with TV. On the monitoring TV display 7 a sapling line which is a little longer than the diameter of the single crystal 13 is scanned from the top down to the bottom over the bright line image to measure the width of the bright ring at 2 points. The maximum value obtained during scanning is regarded as the diameter of the single crystal 13 to control the diameter to the set value with the camera controller 3, interface 4 and computer 5.
Patent JP-H05289273-A (JP)
Title: Color developing solution for color photographic sensitive material
Inventor: ISHIDA KENJI
IPC: G03C7/44
Filed: 1992-04-06
Abstract: PURPOSE:To provide the color developing solution and a processing method capable of obtaining appropriate gradation as a color print and stable processing small in fluctuation. CONSTITUTION:The color developing solution for use in the color photographic sensitive material containing silver chloride in an amount of >=80mol % containing a p-phenylenediamine type color developing agent is characterized by containing a compound represented by the formula and sulfite in a concentration of <=3.0X10<-3>mol per mol/l of the processing solution, and substantially no benzyl alcohol. In the formula, Z1 is an atomic group necessary to form a benzene ring or an N-containing 6-membered hetero ring; Z2 is an atomic group necessary to form a pyrazole, imidazole, or triazole ring together with -NH-; and rings formed by Z1 and Z2 are optionally substituted.
Patent JP-S60226353-A (JP)
Inventor: TATE SEISAKU
IPC: B61L25/02
Filed: 1984-04-24
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000277528-A (JP)
Title: Silicon wafer heat-treating method
Inventor: KOYA HIROSHI
IPC: C30B29/06
Filed: 1999-03-26
Abstract: PROBLEM TO BE SOLVED: To obtain a silicon wafer of a constitution wherein even though the silicon wafer is subjected to a conventional OSF actualizing heat treatment, an OSP is free and a COP is free within the wafer and a contamination of Fe or the like on the wafer and a slip of the wafer are hardly caused. SOLUTION: This heat-treating method is a silicon wafer heat-treating method wherein a heat treatment is performed on a silicon wafer being generated both a COP and a dislocation pit within its surface for two to five hours at a temperature of 1000 deg.C±30 deg.C under an oxygen atmosphere and successively when the wafer is heat-treated for one to sixteen hours at a temperature of 1130 deg.C±30 deg.C, an OSF is actualized in the center part of the wafer. The silicon wafer is heat- treated for one minute to 6 hours at a temperature of 1130 to 1200 deg.C under an atmosphere of 100% of oxygen of under an atmosphere mixed oxygen with nitrogen.
Patent JP-S62241200-A (JP)
Title: Boosting circuit
Inventor: TSUTSUI TORU
IPC: G11C11/34
Filed: 1986-04-12
Abstract: PURPOSE:To attain the miniaturization and low cost of an IC by amplifying an amplitude of a clock wave and using a boosted clock wave so as to apply multi-stage boosting of a DC voltage thereby decreasing the number of stages of multiple-stage boosting. CONSTITUTION:A clock wave phi from a clock generating source A is fed to a coupling capacitive element C1 of the 3rd boosting unit F via a clock buffer BR1. A power supply voltage VCC in the unit F is switched by a transistor Q1 and boosted into a voltage VS. Then the lock wave phis of the voltage VS in the amplitude is outputted via a buffer BF3. Similarly, the voltage VCC is boosted to a voltage VR by the inverse of the clock wave phi and the inverse of the clock wave phis whose amplitude is voltage VR is outputted via the buffer BF4. The boosted clock waves phis, the inverse of phis are fed to a multi-stage boosting means Ct, where they are boosted. Thus, the number of stages of multi-stage boosting is decreased and the miniaturization and low cost are attained.
Patent JP-H01256075-A (JP)
Title: Carriage mechanism for magnetic disk device
Inventor: OGAWA TOMIHISA
IPC: G11B21/02
Filed: 1988-04-06
Abstract: PURPOSE:To ensure stable movement of a magnetic head and to reduce shock by using a suppressing means to suppress the movement of the magnetic head from a data zone to the outside of the moving range when lock mechanism is released while steady-state rotation is obtd. CONSTITUTION:Till a disk 12 reaches a steady-state rotation, a solenoid 15 is not excited and kept in the locking state. In this case, the magnetic head 11 is locked in the floating enable state and when the disk 12 reaches the steady-state rotation, the solenoid 15 is excited to release the locking mechanism. The magnetic head 11 is moved till nearly the center of a data zone 13b by the action of springs 21a, 21b, halted at the location and each tension of the springs 21a, 21b is balanced. Thus, the stable movement of the magnetic head 11 is ensured and a shock caused by the magnetic head 11 to the outside of the moving range is reduced.
Patent JP-S61242059-A (JP)
Title: Semiconductor device for capacitor microphone
Inventor: SEKINE TOKUO
IPC: H01L21/337
Filed: 1985-04-19
Abstract: PURPOSE:To control a high resistance value formed by an impurity having extremely low concentration with high precision by forming an impurity impermeable film to at least a lower surface of a high resistor connected in parallel between a gate and a source for a junction type FET. CONSTITUTION:A first island region 6 isolated by an isolation region 5, a second island region and a third island region 7 are formed onto a P-type semiconductor substrate. A J-FET is shaped into the first island region 6 while a junction diode is formed into the second island region. Polysilicon 4 having high resistance and an silicon nitride film 8 as an impurity impermeable film to the lower surface of at least a high resistor 4 are shaped onto the third island region 7. The J-FET, the junction diode and the high resistor 4 are connected electrically through electrodes 9.
Patent JP-S61242053-A (JP)
Title: Semiconductor device
Inventor: SATO TAKEHISA
IPC: H05K1/18
Filed: 1985-04-19
Abstract: PURPOSE:To improve heat dissipation while enhancing mounting density by bending an external lead for a semiconductor device, in which a semiconductor element is fixed directly to a metallic substrate, to a J-shape. CONSTITUTION:A conductive path 9 and an external extracting electrode 5 are formed onto the back of a metallic substrate 2 having excellent thermal conductivity, and a semiconductor element 3 simultaneously generating heat is fastened onto the conductive path 9. The substrate 2 and a cover body 4 are unified so as to connect the end section of an external lead 6 not projected from a leading-out hole 12 for the cover body 4 covering the back of the metal lic substrate 2 and the external extracting electrode 5 for the substrate 2. An external lead 6 projected from the leading-out hole 12 is shaped to a J-shape, and fixed to the support substrate through surface mounting.
Patent JP-S5445467-A (JP)
Title: Simple prediction controller
Inventor: FUJIWARA TOSHIKATSU
IPC: G05B11/32
Filed: 1977-07-15
Abstract: PURPOSE: To reduce the effect of disturbance, by determining a command for a conventional follow-up control system by a predictor to which the disturbance and the difference between the command and a measured value of the control system.  
     CONSTITUTION: A block 10 surrounded by the dotted line in Fig. is the conventional follow-up control system, which consists of a comparator 13, a PID calculator 14 and a controlled object 11 and receives the disturbance 15. The command for the control system is determined by the predictor 22, a coefficient unit 29 and an integrator 25. The difference 21 between the output of a command setting unit 19 and a detected value of controlled variable, a command 23 after the lapse of a lead time and a predicted disturbance 24 after the lapse of the lead time are applied to the predictor 22, the output of which is transmitted to the integrator 25 by pulses generated by a pulse generator 28. Then, the integrator produces a command signal for the control system 10 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H11265871-A (JP)
Title: Cleaning treatment method
Inventor: TANAKA HIDEYA
IPC: B08B3/02
Filed: 1998-03-16
Abstract: PROBLEM TO BE SOLVED: To provide a cleaning treatment method which is capable of superior treatment from immediately after a cleaning treatment has started, and does not delay a cleaning treatment time. SOLUTION: In this method, a megasonic nozzle 25 which is constituted movably between a standby position square and the upper part of a wafer retained by a spin chuck 22 is moved to the upper part of the wafer W, pure water to which ultrasonic vibration is applied is supplied to the surface of the wafer W from the megasonic nozzle 25, and cleaning treatment is performed. While the megasonic nozzle 25 moves from the standby position square to the peripheral part (the position of a megasonic nozzle 25'' in the figure) of the wafer W, pure water is supplied beforehand to the surface of the wafer W by a nozzle 26.
Patent JP-S57199582-A (JP)
Title: Electron beam welding method
Inventor: FUJITA HIROSHI
IPC: B23K15/00
Filed: 1981-06-04
Abstract: PURPOSE:To make the height of weld beads uniform and to prevent recessing in irradiating an electron beam to a rotating circumferential joint and welding the same by moving the electron beam forward of the weld zone in the part where the welding ends. CONSTITUTION:When an electron beam 2 is irradiated to the work 1 while it is kept rotated, part of the work 1 melts and the molten metal is forced to backward of the weld zone, thereby creating weld beads 4. In the part where the welding ends, the beam 2 is deflected forward of the welding by an electromagnetic coil 5 and is irradiated like an electron beam 2a. Part of the molten metal moves forward by the effect of gravity, and buries the recess at the terminal of the welding, thereby eliminating cratering. If the output of the beam 2a is decreased gradually, the height of the beads 4 is made more uniform.
Patent JP-2000272362-A (JP)
Title: Driving device for hybrid car
Inventor: WAKUTA SATOSHI
IPC: B60L50/16
Filed: 1999-03-26
Abstract: PROBLEM TO BE SOLVED: To ensure mounting performance of a vehicle by preventing increase in a size in the axial direction and increase in a size in the radial direction and to ensure output torque of a motor generator. SOLUTION: An intermediate portion 30b of a front cover 30 of a torque converter 5 is axially extended. A lock-up clutch 3 composed of a multi-plate clutch is mounted on an internal diameter side of the intermediate portion and a motor generator 6 is mounted on an external diameter side of the intermediate portion 30b. A dumper spring 41 is disposed on an internal diameter side of friction plates 36, 37 of the lockup clutch 3.
Patent JP-H08287790-A (JP)
Title: Electromagnet for breaker closing operation
Inventor: YAMADA YUKIO
IPC: H01H33/66
Filed: 1995-04-11
Abstract: PURPOSE: To provide an electromagnet for breaker closing operation capable of closing at stable closing speed and quickly returning a movable iron core despite of simple structure. CONSTITUTION: A set of permanent magnets 12E, 12F are arranged on facing surface of a fixed iron core 12A and a movable iron core 12B of a closing electromagnet 12 so that the same poles are faced, and composite force of electromagnetic attraction and repulsion of permanent magnets is used as the net operation force. Linear, flat operation characteristics are formed compared with no mounting of the permanent magnets, and when this constitution is applied to a breaker, these characteristics agrees with the characteristics of breaking spring of a load, development of excess operating force immediately before completion of closing operation is prevented, stable closing speed is obtained, the mechanism is simplified, and the number of component items is reduced.
Patent JP-H01258419-A (JP)
Title: Pattern formation
Inventor: OGA KAZUHIRO
IPC: G03F7/20
Filed: 1988-04-08
Abstract: PURPOSE:To augment the effective resolving power thereby forming a fine pattern by a method wherein the positions of a mask and a wafer are shifted several times in the direction perpendicular to the optical axis for exposure. CONSTITUTION:A 2mum hole pattern 2 is exposed to a positive resist 1 and then the mask position is shifted to overlap by 0.4mum only for exposing another 2mum hole pattern 3. An overlapped exposure region 4 is formed into a 0.4mum hole pattern 5 after the development. The overlapped exposure can be made feasible by shifting the positions of a mask and a wafer furthermore the resolution limit and the first pattern formation can be made feasible by properly selecting the overlapped region. Through these procedures, the effective resolving power can be augmented to form a fine pattern.
Patent JP-S5420675-A (JP)
Title: Production of semiconductor device
Inventor: MIWA YUKINOBU
IPC: H01L29/08
Filed: 1977-07-18
Abstract: PURPOSE: To produce high frequency elements of less variations with good reproducibility by providing a Si 3 N 4  mask on emitter and base layers and ion implanting, thereafter performing thermal oxidation thereby forming an emitter of an extremely narrow width under the mask. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H06269298-A (JP)
Title: Quick determination of lactobacillus
Inventor: NOGUCHI HIROSHI
IPC: C12Q1/26
Filed: 1993-03-22
Abstract: PURPOSE:To accurately, quickly and easily determine the presence of lactobacillus useful in the field of food industry by applying a cultured product of the test bacterial strain to a peroxide test paper containing lactate oxidase and examining the change of the color of test paper. CONSTITUTION:A small amount of the cultured product of the microorganism to be tested is applied to a peroxide test paper containing a lactate oxidase and the color change of the test paper is examined after 1-10 min. When lactobacillus which is a harmful microorganism for the brewing of beer is present in the microbial examination in the brewing of beer, the produced lactic acid produces hydrogen peroxide by the action of the lactate oxidase in the test paper and the generated oxygen reacts with an indicator to change the color of the paper to blue color. The method can accurately, quickly and easily judge the presence of lactobacillus and is expected to be utilizable in the field of food industry requiring the examination of the presence of lactobacillus from the viewpoint of microbial contamination management.
Patent JP-S61249900-A (JP)
Inventor: JIEIMUZU EICHI GURADEIN
IPC: G03B21/10
Filed: 1986-04-15
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S59209890-A (JP)
Title: Head for wire dot printer
Inventor: SATOU NOBUO
IPC: B41J2/265
Filed: 1983-05-16
Abstract: PURPOSE:To contrive to enhance accuracy of the position of a wire guide, by a method werein a resin is charged into tapered holes provided at four corner parts of a head to integrate a wire guide and a tip part of the head to each other. CONSTITUTION:A wire guide 12 is set in a metallic mold for injection molding which is finished with high accuracy, and a molding resin for a head nose 11 is charged into the tapered holes 13 provided at four corner parts, whereby the wire guide 12 is assembled as one body with the head nose 11 with high accuracy. Since the holes 13 are tapered, the resin charged into the holes 13 can firmly hold the wire guide 12. Since a part for setting the wire guide 12 can be formed with high accuracy when producing the metallic mold, accuracy in positioning can be maintained to be as high as the accuracy of the head nose.
Patent JP-H05290326-A (JP)
Title: Production of thin film magnetic head
Inventor: HIRANO TAKAYUKI
IPC: G11B5/31
Filed: 1992-04-07
Abstract: PURPOSE:To relieve internal stress, to prevent the exfoliation and crazing of an insulating film and to enhance the yield of products. CONSTITUTION:Only parts of an insulating film near conductor coil pattern 5 and magnetic pole patterns 3 requiring the flattening of the insulating film are flattened by constant-rate etching of a photoresist and silicon dioxide to form flattened parts 14 of the insulating film. In this flattening process, stress relieving parts 11 are also formed by removing unnecessary parts of the insulating film apart from element by etching.
Patent JP-S5512752-A (JP)
Title: Semiconductor device manufacturing method
Inventor: IDOGAMI TAKASHI
IPC: H01L29/72
Filed: 1978-07-12
Abstract: PURPOSE: To improve stability of a semiconductor device by reducing superficial electric charge of a semiconductor base plate simply by conducting heattreatment.  
     CONSTITUTION: A semiconductor element region 2 is formed by selective dispersion of impurity of different dielectric from main surface of a semiconductor base plate 1 of one-electroconductive type. And then, impurity of the same dielectric as the base plate 1 is selectively dispersed to form a semiconductor element region 3. On the main surface of the base plate 1, a silicon oxide film is formed by the heat to be applied during the dispersion process. By providing the oxide film 4 with a contact hole, a base electrode 5 and an emitter electrode 6 are formed. The surface of the semiconductor base plate 1 is activated by heattreatment at approximately 500°C in an inert gas atmosphere. And then, a wafer-like metallic titanium or a metallic nickel plate 7 is heattreated in an inert gas atmosphere at approximately 350°C by keeping it in contact with the oxide film 4 of the semiconductor base plate 1 and also with formed surface of the electrodes 5 and 6. 
     COPYRIGHT: (C)1980,JPO&Japio