baber/WOPTO huggingface dataset:
Patent JP-H066058-A (JP)
Title: Unit linking mount
Inventor: MICHIMAE YOSHIHIRO
IPC: H05K7/18
Filed: 1992-06-17
Abstract: PURPOSE:To obtain a unit linking mount, where mounting frames can be freely changed in arrangement. CONSTITUTION:A unit linking mount is composed of mounting frames 2 which are square and molded and linking members 3a and 3b which link the corresponding sides of the mounting frames 2 together so as to arrange the mounting frames 2 in one plane. A linking groove 4a (or 4b) is provided to each side of the mounting frames 2, and the linking member 3a (or 3b) is lengthwise fitted into the opposed linking grooves 4a and 4a (or 4b and 4b) of the mounting frame 2.
Patent JP-H11135756-A (JP)
Title: Formation of capacitor having di-tantalum pentoxide dielectric film
Inventor: KO KIGEN
IPC: H01L21/316
Filed: 1998-06-05
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a capacitor, including an improved preprocessing method carried out prior to di-tantalum pentoxide (Ta2 O5 ) dielectric film being deposited on a HSG lower electrode. SOLUTION: Two stages of rapid heat nitriding processing, consisting of primary and secondary rapid heat nitriding processing, is carried out on a semiconductor substrate on which a HSG lower electrode is formed. Preferably a primary rapid heat nitriding processing 104 be carried out in an ammonium gas atmosphere under a temperature condition of 800±40 deg.C for 180±60 seconds, and that the secondary rapid head nitriding processing 106 be carried out in an ammonium gas atmosphere under a temperature condition of 850±40 deg.C for 180±60 seconds. Thus, flocculation to the HSG-shaped lower electrode is restrained, and an oxide carrier film having a sufficient thickness can be formed. Therefore, cell capacitance can be increased.
Patent JP-S5860574-A (JP)
Title: Manufacture of field-effect transistor
Inventor: YAMAZAKI KIMIYOSHI
IPC: H01L21/31
Filed: 1981-10-06
Abstract: PURPOSE:To enable to freely control the distance between the effective gate junction part and the high density ion implanted layer of the titled transistor by a method wherein, after the high density ion implanted layer has been formed using a resist mask of multilayer construction, insulating films are formed and a gate electrode is provided between the insulating films. CONSTITUTION:A triple layer resist, consisting of a primary ion-implanted layer 13, a silicon nitride film 14, a resist 15, an insulating film 16 and a resist 17, is formed on the substrate 12 consisting of high-resistance gallium arsenic, and a high-density ion implanted layer 18 is formed using said triple-layer resist as a mask. Then, after SiO2 film has been deposited, an SiO2 film 19 is formed on the silicon nitride film 14 by removing the triple-layer resist. A heat treat- ment is performed to activate the ion-implanted lyaer 18, and after the part corresponding to the region where source anddrain electrodes will be formed, either of the SiO2 film 19 and the silicon nitride film 14, a source electrode 20 and a drain electrode 21 are formed. Then, a gate electrode 22 is formed at the section located between the SiO2 films 19.
Patent JP-H0453604-A (JP)
Title: Drill chuck
Inventor: NAGANO SHIGERU
IPC: B23B31/173
Filed: 1990-06-15
Abstract: PURPOSE:To check the axial relative motion of a nut and a case due to vibration or impact in a vibrating drill and a hammer drill by installing a recess in a press-in part of the nut. CONSTITUTION:An inner diameter of a case 4 is enlargeable up to the diameter of a nut 2 at the time of press-in, but after the press-in, the inner diameter of the case 4 imposed on a recess 2a of the nut 2 is returned to the size before the press-in. With this constitution, axial motions of the case 4 and the nut 2 is checked.
Patent JP-S5948606-A (JP)
Title: Displacement measuring device
Inventor: HASEYAMA AKIRA
IPC: G01B7/312
Filed: 1982-09-13
Abstract: PURPOSE:To facilitate measuring operations and to accurately measure the true change by providing one or more electric micrometers, an arithmetic processing unit and an output unit. CONSTITUTION:An object 3 to be measured is positioned by means of stopper pins 4, and cylinders 1, 2 are measured at three points in their circumferences using electric micrometers 11, 12. The measured values are fed to an arithmetic processing unit 15 which makes arithmetic operation based on the measured values at those three points from the electric micrometers 11 to determine the position of center and diameter of the cylinder 1. The position of center and diameter of the cylinder 2 are similarly determined based on the measured values relating to the cylinder 2 from the electric micrometers 12. The unit 15 then compares the computed results for both cylinders 1 and 2 to determine error in diameter and offset of the center position. These computed results are indicated using a cathode ray tube display 16 in the form of numbers and figures, so the observer can confirm easily the result at a glance.
Patent JP-S5582473-A (JP)
Title: Semiconductor photo-receptor
Inventor: AKITA KENZOU
IPC: H01L31/10
Filed: 1978-12-14
Abstract: PURPOSE: To receive waves in a region of long-wave length, by successively forming the first and the second four-element layers InGaAsP onto InP, by making up pn- junction between the first and the second four-element layers or in the first four- element layer, and by using the second four-element layer as a window for receiving light.  
     CONSTITUTION: p-Type In x Ga 1-x As y P 1-y (0<x<1, 0<y<1) 2 as the first four- element layer and n-type In x Ga 1-x As y P 1-y (0<x<1, 0<y<1) 7 as the second four-element layer are successively grown epitaxially on a p-type InP substrate 1, and pn-junction is built up between one portion of the first four-element layer 2 and a residual p-type layer 2a while employing the one portion of the layer 2 as an n- type layer 2b. The second four-element layer 7 side is made use of as a light receiving window. A reception-possible wavelength region is a range of the wavelength of λ 1 ∼λ 2  when wavelength corresponding to a band gap of the first four-element layer 2 is λ 1  and that of the second four-element layer 7 λ 2 , thus allowing reception in a region of the long-wave lengths of 1.0∼1.7μ corresponding to a region not more than 1eV in 300°K. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-H0450299-A (JP)
Title: Water-soluble cutting fluid
Inventor: FUCHIGAMI MASAHARU
IPC: C10N30/16
Filed: 1990-06-15
Abstract: PURPOSE:To obtain a water-soluble cutting fluid having antifungal activities against yeast fungi, excellent microorganism deterioration resistance and excellent cutting performances, containing a specific amine. CONSTITUTION:The objective cutting fluid containing an amine shown by the formula (R1 is 5-8C cycloalkyl or alkyl containing the same cycloalkyl group as part of structure; R2 and R3 are H, 1-3C alkyl, hydroxyalkyl, 5-8C cycloalkyl or alkyl containing the cycloalkyl group) as part of structure. When the cutting fluid is diluted and used, amine concentration in coolant is preferably 0.001-1wt.%.
Patent JP-S5949332-A (JP)
Title: Fuel-cut controller for internal-combustion engine
Inventor: TORII MASANORI
IPC: F02D41/12
Filed: 1982-09-14
Abstract: PURPOSE:To prevent dropping of engine rotation or stall without deteriorating fuel consumption, by detecting the variation of rotation since fuel cut under deceleration and if it is high, resetting fuel even if the engine rotation has not dropped to reset rotation. CONSTITUTION:Variation of engine rotation from fuel-cut is detected and decided whether it is higher than predetermined level, and if it is higher fuel resetting is performed even if the engine rotation has not dropped to the reset rotation. Such fuel-cut control is constituted as a software for microcomputer and stored in ROM 42. The variation of engine rotation Newhich is the difference between previous engine rotation Ne(n-1) and present engine rotation Ne(n) is calculated and if DELTANe is higher than predetermined level, MPU40 will provide a fuel-cut resetting command from I/O port 34 to a driver circuit 36. Consequently fuel is fed again.
Patent JP-S6314948-A (JP)
Inventor: FUNAKI GANTAN
IPC: E04D3/366
Filed: 1986-07-08
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0740611-A (JP)
Title: Printer
Inventor: SATO KAZUHIRO
IPC: G06F17/21
Filed: 1993-06-29
Abstract: PURPOSE:To easily obtain a label tape printed with a plurality of contents without repeatedly conducting a label tape cut-off operation and a printing start operation by a printing key. CONSTITUTION:A character code inputted by keys and a cutting code inputted by a cutting key 12h are stored in a code register 32b of a RAM 32 in the order of input. If code data read by a CPU 30 in accordance with a pointer sequentially additionally set in a pointer register P by operating a printing key 12i is a character code, a corresponding font is read from a ROM 31, outputted to a thermal head 25, and printed on a label tape fed by a motor 35 through a tape drive circuit 33. Furthermore, if read code data is a cutting code, a cutter mechanism is actuated by a motor 27 through a cutting motor drive circuit 34 to automatically cut a printed label tape.
Patent JP-S6138867-A (JP)
Title: Grinding method of surface grinding machine
Inventor: SATO MITSURU
IPC: B24B49/02
Filed: 1984-07-31
Abstract: PURPOSE:To maintain highly accurate machining irrespectively of thermal deformation of spindle head due to production of heat in the spindle, by performing comparative measurement through a sensor and operating the difference between previously inputted finish dimension of work and the measured dimension thereby controlling the feeding amount of grinding wheel. CONSTITUTION:At first, the grinding wheel 1 will move to (+)Y1(-)Z1(-)Y2 to perform rough grinding then lift upto (+)Y3 and wait. Then a touch sensor will detect the referential face of work and contact against the measuring face of work 6 to detect the dimension B. Here, the inner function of NC machine will calculate the dimension D on the basis of preset dimensions E and B. Then the touch sensor will lift again in the direction of Y-axis and wait. Thereafter, the grinding wheel L will lower upto (-)Y3. Then it is fed by the grinding margin (-)Y4 to perform fine grinding upto the finish dimension E. Thereafter, the grinding wheel 1 will move to (+)Y5(+)Z1(-)Y1 and reset to the original point of NC program.
Patent JP-H06295074-A (JP)
Title: Electrophotographic sensitive body, electrophotographic device and facsimile equipped with the electrophotographic sensitive body
Inventor: GO SHINTETSU
IPC: H04N1/00
Filed: 1992-05-27
Abstract: PURPOSE:To improve mechanical durability and productivity by incorporating specified polyvinylacetal into a charge producing layer and specified polycarbonate into a charge transfer layer. CONSTITUTION:This electrophptographic sensitive body has a laminated photosensitive layer consisting of at least a charge producing layer and a charge transfer layer on a conductive supporting body. The charge producing layer contains polyvinylacetal having the structure expressed by formula I, and the charge transfer layer contains polycarbonate expressed by formula II. In formula, R1R5 are hydrogen atoms, fluorine atoms, or trifluoromethyl groups, and may be same or different. However, all of R1-R6 are not hydrogen atoms. N is 500-5000 and R6-R13 are hydrogen atoms, halogen atoms or alkyl groups.
Patent JP-H029862-A (JP)
Title: Production of azetidinone derivative
Inventor: NARUTO SHUNJI
IPC: B01J31/12
Filed: 1988-06-27
Abstract: PURPOSE:To readily obtain the title substance useful as a synthetic intermediate for beta-lactam based antibiotic in mild conditions and good yield by reacting a alpha-substituted carboxylic acid ester derivative with a Schiff base in the presence of tin triflate and base. CONSTITUTION:A compound expressed by formula I (R<1> is protecting group, e.g., lower alkyl or alkylcarbonyl, of the group -XH; R<2> is H, lower alkyl, cycloalkyl, aryl, etc.; R<3> is protecting group of carboxy group; X is O, S, selenium, sulfoxide, etc.) is reacted with a compound expressed by formula II (R<4> and R<5> are H or group comparable with R<2> provided that these are not simultaneously H; Z is protecting group of amino group) in the presence of tin triflate expressed by formula III and base (e.g., triethylamine) to provide the compound expressed by formula IV. Thereby synthesis under mild conditions is made possible and restriction to the Schiff base capable of using for the reaction is remarkably relaxed.
Patent JP-H0711404-A (JP)
Title: Production of ni-base alloy having intergranular fracture resistance
Inventor: IGARASHI MASAAKI
IPC: C22F1/00
Filed: 1993-06-29
Abstract: PURPOSE:To produce an Ni-base alloy excellent in intergranular fracture resistance under a sour gas environment by subjecting an alloy, having a specific composition consisting of Cr, Mo, Nb, Fe, and Ni, to respectively specified heat treatment and plastic working and precipitating a carbide. CONSTITUTION:An alloy, having a composition consisting of, by weight, 12.0-25.0% Cr, 11.0-20.0% Mo, 4.0-7.0% Nb, 5.0-20.0% Fe, and 50.0-60.0% Ni, is heated and held at 1000-1300 deg.C for 1-200hr. This alloy is subjected to plastic working at 900-1300 deg.C at >=10% reduction of area once or more and held at 900-1250 deg.C for 1min-100hr. Subsequently, the alloy is cooled down to successive aging temp. (600-800 deg.C) at a cooling velocity between furnace cooling and air cooling velocities and held at 600-800 deg.C for 1-200hr to undergo aging treatment. By this method, an NbC type carbide of <=40mum can be precipitated in the grain boundary, and the highly corrosion resistant Ni-base alloy for oil well member, having high strength and excellent in stress corrosion cracking resistance and hydrogen cracking resistance even under a sour gas environment containing S as simple substance, can be obtained.
Patent JP-S5860510-A (JP)
Title: Circuit for monitoring constant-current operation of electromagnetic coil
Inventor: WATANABE TOSHIHIKO
IPC: H01F7/18
Filed: 1981-10-06
Abstract: PURPOSE:To detect disability of constant-current operation by monitoring the output amplitude of a drive amplifier. CONSTITUTION:With a transistor Q2 being OFF, when the current flowing into a (-) terminal of an amplifier M through a resistor R4 and a diode D1 is made larger than that flowing into a (+) terminal thereof, the potential at the point A becomes 0 and a transistor Q1 is not conducted. With the transistor Q2 being ON, a diode D2 is not conducted and hence the output of the amplifier M is determined such that the feedback current through a resistor R2 becomes equal to the current from a resistor R1. When the voltage VS is sufficient and the constant-current operation is effected, the potential at the point A assumes VBE+R3.i. (The current amplification rate of the transistors is assumed to be sufficiently large). In the event the voltage VS is insufficient for the constant-current operation, the potential at the point A is raised up so as to substantially coincide with the source voltage Vp of the amplifier M, as indicated by a dotted line. Since both voltages Vp and VBE+R3.i can be set independently of each other, the difference value of Vp-(VBE+R3.i) can be selected to become sufficiently large. Thus, by monitoring the potential at the point A, it is possible to detect that the constant-current operation was made disabled.
Patent JP-H11242886-A (JP)
Title: Semiconductor integrated circuit
Inventor: ARAI KOJI
IPC: G11C11/419
Filed: 1998-06-08
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit(SIC) capable of reducing power consumption within a potential conversion circuit for converting the potential of bit lines. SOLUTION: (1) This SIC is equipped with bit lines BL1, BL2, precharge circuit PCC connected to these lines, potential conversion circuit SA and a memory cell MC. In the potential conversion circuit SA, between a high potential V2 and the ground potential GND, there are a current passage for transistors T3, T4, T6 and one for transistors T3, T5, T9. The gate electrode for the transistors T3, T4, T6 receives a mode signal PC, while that for transistors T4, T5 is connected to the bit lines BL1, BL2. (2) With this structure as above, the period is shortened in which a current flows from the high potential V2 to the ground GND inside the potential conversion circuit SA, thereby reducing the power consumption.
Patent JP-S6219660-A (JP)
Inventor: YOSHIDA NOBUYUKI
IPC: F25C5/10
Filed: 1985-07-18
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S58135516-A (JP)
Inventor: SUZUKI KINYA
IPC: H01B11/18
Filed: 1981-10-06
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0722896-A (JP)
Title: Surface acoustic wave generator and its assembling method
Inventor: NAGANO TAKAHIRO
IPC: H03H3/08
Filed: 1993-06-29
Abstract: PURPOSE:To attain miniaturization and thinning by housing a surface acoustic wave element in the recessed part of a package inner bottom part, and connecting an electrode on the inner bottom part, the electrode of a circuit element arranged on a bottom part, and the electrode of the surface acoustic wave element by wireless bonding. CONSTITUTION:The surface acoustic wave element 3 is housed by providing with a recessed part 2 on the package 1 inner bottom part, and a circuit element 4 is arranged on the package 1 inner bottom part, and a package electrode 5 on the package 1 inner bottom part, the electrode 6 for use of package connection of the circuit element 4, the electrode 7 for surface acoustic wave element connection of the circuit element 4, and the electrode 8 of the surface acoustic wave element 3 are connected by wireless bonding. In other words, a bump 9 made of Au, etc., is formed on the electrodes 7, 8, and the connection of the circuit element 4 to the surface acoustic element 3 is performed, and the bump 9 made of Au, etc., is formed on the electrode 6 or 5, and the connection of the circuit element 4 to the package 1 is performed. Thereafter, a cap 10 is placed on the upper part of the package 1, then, it is sealed.
Patent JP-2000349913-A (JP)
Title: Method for generating utility history in video conference system and the video conference system with utility history generating function
Inventor: ABE HIRONORI
IPC: H04N7/15
Filed: 1999-06-07
Abstract: PROBLEM TO BE SOLVED: To provide a method for generating a utility history in a video conference system that can reflect cross-reference between reservation information and call connection information to a utility history and to provide the video conference system. SOLUTION: A call connection information collection section 21 periodically collects call connection information of a video conference system, and a call connection information storage section 31 stores the collected information. When collection is disabled due to some fault, the storage section 31 stores finally collected call connection information number and the next call connection information number is collected at a next collection period. Furthermore, a reservation information collection section 22 collects reservation information from a reservation controller 7, and a reservation information storage section 32 stores the collected information. When the information cannot be collected due to some fault, the finally collected reservation information number is memorized sand the next reservation information is collected at the next collection period.  A utility history generating section 23 periodically read the call connection information storage section 31 and the reservation information storage section 32 and cross-reference them, and stores the result to a utility history storage section 33.
Patent JP-S6136973-A (JP)
Title: Semiconductor device
Inventor: TAKENAKA NOBUYUKI
IPC: H01L29/78
Filed: 1984-07-30
Abstract: PURPOSE:To restrain the generation of hot electrons by alleviating the electric field concentration in the vicinity of a drain by forming a MIS diode of depression mode which is composed of the second gate electrode and an N<-> diffusion layer in the vicinity of a side wall of a gate electrode. CONSTITUTION:After forming the first gate oxide film 13, the first gate electrode 14 in the region which is isolated by a field oxide film 12 formed on a P type silicon substrate, an N<-> diffusion layer 16 is formed on the substrate 11. Next, a side wall 18 is formed on a side wall of the first gate electrode 14 through an oxide film 15. Subsequently, ion implantation is done with using the side wall 18 as a mask to form a source 20 and a drain 21 composed of an N<+> diffusion layer. As a result, the side wall 18 and the N<-> diffusion layer 16 right under said wall 18 function as a MIS diode of depression mode so that the generation of hot electrons can be restrained by diminishing the strength of electric field in the vicinity of the drain 21.
Patent JP-S5189972-A (JP)
IPC: F16D65/46
Filed: 1975-12-27
Abstract: A self-energizing disc brake is operated by an actuator which moves spreading pressure plates angularly in opposite directions to apply rotatable friction discs to radial surfaces in a stationary housing, and the actuator comprises a wedge for separating lugs on the plates, a spring for urging the wedge in a direction to separate the lugs, and a piston working in a cylinder bore for urging the wedge in the opposite direction when the cylinder is pressurized.
Patent JP-S6050329-A (JP)
Title: Process for making specially separated clean air chamber at a part in clean air chamber
Inventor: KIZAWA SHIGEO
IPC: F24F3/16
Filed: 1983-08-31
Abstract: PURPOSE:To supply fresh clean air to the required part to keep a required value and purify other portions with secondary utilization of the clean air by a method wherein a curtain is suspended at the outer circumference of the lower part of the clean air blowing device. CONSTITUTION:At a ceiling of an inculation room 1 are attached several sets of clean air blowing port device at its main body 12 having numberless blowing ports 8 at its lower wall and inlets 9 for clean air at its side walls and having clean air dispersion plate 10 and an adjusting valve 11 thereacross, and the clean air inlet port 9 of the main body 12 of the clean air blowing portdevice and a clean air supplying port 7 in the clean air producing device 6 are connected by a duct 14. A rectangular curtain 19 is suspended by a curtain runner 18 of a curtain rail 16 around an entire outer circumference of the lower part of the clean air blowing port device at its main body 12.
Patent JP-S5949687-A (JP)
Inventor: DOUMEN TOSHINORI
IPC: G07F5/24
Filed: 1982-09-14
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5949105-A (JP)
Inventor: KITANO MOTOI
IPC: H01B3/20
Filed: 1982-09-14
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5782461-A (JP)
Title: Martensite alloy containing cobalt for build-up welding
Inventor: KUROKI HIRONORI
IPC: B23K9/04
Filed: 1980-11-13
Abstract: PURPOSE:To prevent the cracking and corrosion of the titled alloy due to the repetition of heating and cooling at high temp. by adding a prescribed amount of C, Ni, Cr, Mo and Co to Fe. CONSTITUTION:The titled alloy consists of, by wt., <=0.1% C, <=2% Ni, 9.5-14% Cr, 0.3-0.8% Mo, 0.5-4% Co and the balance Fe. This alloy has superior mechanical properties and causes no cracks even if heated and cooled repeatedly at high temp. In addition, it has corrosion resistance.