Patent SG-11201900069U-A (SG)
Title: Field-effect transistor, method for producing the same, display element, image display device, and system
Inventor: KUSAYANAGI MINEHIDE
IPC: H01L29/786
Filed: 2017-07-14
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property MD HIM 0 11101 HOE 3E1 0 0111111 0111100 HE In MEV 011 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/016456 Al 25 January 2018 (25.01.2018) WIPOIPCT (51) (21) (22) (25) Filing Language: (26) (30) (71) (72) (71) International Patent Classification: 1-chome, Ohta-ku, Tokyo, 1438555 (JP). SAOTOME, Ry- HO1L 29/45 (2006.01) HO1L 29/786 (2006.01) oichi [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome HO1L 29/66 (2006.01) 1-chome, Ohta-ku, Tokyo, 1438555 (JP). ARAE, Sadanori [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1- International Application Number: PCT/JP2017/025827 chome, Ohta-ku, Tokyo, 1438555 (JP). International Filing Date: (74) Agent: HIROTA, Koichi; HIROTA, NAGARE & 14 July 2017 (14.07.2017) ASSOCIATES, 4th Floor, TS Bldg., 1-24-10, Yoyogi, Shibuya-ku, Tokyo, 1510053 (JP). English (81) Designated States (unless otherwise indicated, for every Publication Language: English kind of national protection available): AE, AG, AL, AM, Priority Data: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 2016-142511 20 July 2016 (20.07.2016) JP CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, 2017-109747 02 June 2017 (02.06.2017) JP HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, Applicant (for all designated States except US): RICOH KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, COMPANY, LTD. [JP/JP]; 3-6, Nakamagome 1-chome, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, Ohta-ku, Tokyo, 1438555 (JP). PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, Inventors; and TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Applicants (for US only): KUSAYANAGI, Minehide [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1- (84) Designated States (unless otherwise indicated, for every chome, Ohta-ku, Tokyo, 1438555 (JP). UEDA, Naoyuki kind of regional protection available): ARIPO (BW, GH, [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, chome, Ohta-ku, Tokyo, 1438555 (JP). NAKAMURA, Yu- UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, ki [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 1-chome, Ohta-ku, Tokyo, 1438555 (JP). ABE, Yukiko EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1- MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, chome, Ohta-ku, Tokyo, 1438555 (JP). MATSUMOTO, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, Shinji [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakam- KM, ML, MR, NE, SN, TD, TG). agome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). SONE, Yuji [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome Title: FIELD-EFFECT TRANSISTOR, AND SYSTEM : A field-effect electrode, which are configured drain electrode and is formed of an oxide semiconductor; and a gate insulating the active layer, the source electrode and the drain electrode each including of one or more metal oxides, and a part of the oxide region in each with the active layer, and rest of the oxide region being in contact with (54) DEVICE, METHOD FOR PRODUCING THE SAME, DISPLAY ELEMENT, IMAGE DISPLAY 16 K. ' 1 -------- 15 ----------\"' 1 1 apply gate voltage; a source electrode and a disposed between the source electrode and which is disposed between the gate electrode formed of a metal and an oxide region electrode and the drain electrode being in components other than the active layer. 12B 12A 14 13A 13B lilli,IP ,-1 .4 ir) 7 1. (57) ,(:) drain Il the 0 ---- and GC formed 1-1 © contact ei 61111110•1111111 13 to which is layer, a metal region of the source one or more 12 transistor including: a gate electrode, which is configured to take electric current out; an active layer, O [Continued on next page] WO 2018/016456 Al MIDEDIMOMMIDEFIEHEMEINIVERMOVOIMIE Published: — with international search report (Art. 21(3))