baber/WOPTO huggingface dataset:
Patent JP-S6418785-A (JP)
Title: Mounting construction of rear spoiler
Inventor: FUJII HIROSHI
IPC: B62D37/02
Filed: 1987-07-14
Abstract: PURPOSE:To prevent a lower spoiler from being reduced in strength by inserting the shaft of a rear wiper through a wiper shaft insert through-hole formed in the lower spoiler. CONSTITUTION:A lower spoiler 32 has a wiper shaft insert through-hole 40 formed therein and a wiper shaft is inserted through the hole 40. The lower spoiler 32 is mounted on the outer board 52 of a vehicle. After a wiper body 43 is attached to said shaft 41 projecting from the lower spoiler 32, the foot part 42 of an upper spoiler 34 is engaged in the dent on the surface of the lower spoiler 32. Next a bolt is inserted through the hole of the vehicle from the rear side of the outer board of the vehicle, go into the hole of the lower spoiler 32 and then screwed up with a nut of the foot part. The lower spoiler 32 is held firmly between the upper spoiler 34 and the outer board 52 of the vehicle. Thus the rear spoiler 32 consisting of the lower spoiler 32 and the upper spoiler 34 is mounted on the vehicle.
Patent JP-H1021147-A (JP)
Title: Data verify system
Inventor: KIKUCHI YASUYUKI
IPC: G06F12/16
Filed: 1996-07-04
Abstract: PROBLEM TO BE SOLVED: To parallelly perform data input and data check and to exactly and speedily perform a data entry job by inputting data from another input device and checking data through a verify check part when there is no continuation flag in a record from a storage device. SOLUTION: The data inputted from an input device A1 is written through a record write part 3 to a data storage device 4 with one record as a unit. At the same time, the record having the continuation flag is outputted as the next record. Continuously, when data are inputted from the input device A1, data inputted to the record having the continuation flag are outputted through the record write part 3 to the storage device 4. Besides, an input device B2 reads data from the data storage device 4 into a one-matter verify check part 5. Then, when the continuation flag does not rise in the read data, the same data are keyed in from the input device B2, and the verify check is performed by the verify check part 5.
Patent JP-S5879467-A (JP)
Title: Temperature detecting and indicating device for thyristor
Inventor: MAEDA KEIJI
IPC: H02M1/00
Filed: 1981-10-30
Abstract: PURPOSE:To monitor the temperature of a thyristor by shortcircuiting the output side of a pulse transformer with a heat sensitive thyristor when the temperature of the thyristor reaches the prescribed temperature and detecting the presence or absence of the reset voltage of the transformer. CONSTITUTION:A heat sensitive thyristor SCR THT is inserted at the anode A side to the cathode K side of a power converting SCR THM between the cathode K and the gate G of the power converting SCR THM, and is connected in reverse polarity to the gate pulse of the SCR THM at the output side of a pulse transformer PT. The SCR THT is contacted fixedly at the heat sensitive unit with the cooling fin of the SCR THM, and the switching temperature is regulated so that the SCR THM is conducted at the temperature of the cooling fin when the SCR THM is raised to the prescribed temperature. When the temperatue of the cooling fin of the SCR THM reaches the switching temperature, the output side of the transformer PT is shortcircuited to the SCR THT. The reset voltage of the transformer PT is detected by a detector DET, thereby emitting a light emitting diode (not shown) for the prescribed period of time.
Patent JP-S58139677-A (JP)
Title: Effective current calculating system for inverter
Inventor: OOKUBO HIDENORI
IPC: H02M7/525
Filed: 1981-10-31
Abstract: PURPOSE:To simply and inexpensively form a circuit by operating an analog switch to calculate with a gate signal to a thyristor forming an inverter. CONSTITUTION:An AC detection current is inputted to a terminal 8 from an inverter. The terminal 8 is branched at one side through a resistor 9 and an analog switch 10 to -1 gain inverting amplifier 11 and at the other through a resistor 12, -1 gain inverting amplifier 13 and analog switch 14 to an inverting amplifier 11. The gate signal of the thyristor forming an inverter is applied to AND gates 15, 16 and analog switches 10, 14 are controlled by the output signals of the AND gates 15, 16. The output signal of the inverting amplifier 11 is led through a filter 7 as an effective power.
Patent JP-S6153763-A (JP)
Title: Semiconductor device
Inventor: MASUOKA FUJIO
IPC: H01L27/04
Filed: 1984-08-23
Abstract: PURPOSE:To prevent diffusion of impurity into high resistance poly-Si by ohmic- connecting a high resistance poly-Si and low resistance poly-Si through high melting point metal. CONSTITUTION:A high melting point metal such as tungsten or its silicide 31 is selectively attached to the lower surface of poly-Si 12 at the region including buried contact hole of the high esistance poly-Si 12 and a low resistance poly-Si 11 and the poly-Si 11 and poly-Si 12 are ohmic-connected in both sides of a high melting point mtal or its silicide 31. Thereby, an eisting diasdvantage that a high concentration impurity in the poly-Si 11 is diffused in the poly-Si 12 and effective high resistance of poly-Si 12 is reduced can be eliminated. Moreover, the high melting point metal or its silicide 31 is selectively attached at the lower surface of region where resistance of poly-Si 12 must be lowered and this part is formed as the VCC wiring region. Thereby, impurity diffusion at the low resistance part of poly-Si 12 can be prevented.
Patent JP-H103284-A (JP)
Title: Liquid crystal driving circuit and liquid crystal display device having the circuit
Inventor: SHIGETA KAZUYUKI
IPC: G09G3/36
Filed: 1996-06-17
Abstract: PROBLEM TO BE SOLVED: To reduce the scale of the circuit and the cost by sharing the liquid crystal driving signal processing system after a gamma circuit stage against first video signals (interlaced signals) and second video signals (non-interlaced signals). SOLUTION: An analog line memory section 3 doubles the speed of the interlaced signals inputted to a first video signal input terminal 1a and converts the signals to pseudononinterlaced signals. A signal switching circuit 13 selects either the interlaced signals, which are outputted from the section 3 with a double speed, or the noninterlaced signals outputted from a phase adjusting section 11 and switches them. The output of the circuit 13 is converted into an appropriate gamma characteristic in a gamma circuit 14. Then, the video signals are made into alternating inversion signals by a positive-reverse switching amplifier 4. Thus, the liquid crystal driving signal processing system after a gamma circuit 14 stage is shared against the interlaced signals and the noninterlaced signals.
Patent JP-H0225747-A (JP)
Title: Ultrasonic flaw detector
Inventor: SHIMIZU YASUHIRO
IPC: G01N29/44
Filed: 1988-07-14
Abstract: PURPOSE:To exactly execute an inspection of a body to be inspected by dividing a reflected signal into a preceding signal and a succeeding signal, bringing them to comparing operation and detecting a noise component and cutting it from a fundamental reflected wave. CONSTITUTION:An ultrasonic wave is applied to a body to be inspected from a transmitter, a reflected analog signal (fr) which is detected by a receiver is converted 12 to a digital signal, written and stored in memories 17, 18, and also, read-out is executed. The digital signal which is read out is brought to subtracting operation 13 with a succeeding reflected analog signal which is sent from the receiver, by which a noise signal is detected. By this noise signal, a position for generating a high noise signal through a threshold circuit 14 is detected. Subsequently, the succeeding reflected analog signal of its generating position is cut locally, and a noise component is eliminated from the reflected signal.
Patent JP-2000007638-A (JP)
Title: Production of dicyanomethylene compound
Inventor: TSUKAHARA TATSUYA
IPC: C07C255/40
Filed: 1998-06-23
Abstract: PROBLEM TO BE SOLVED: To provide a method for efficiently obtaining a dicyanomethylene compound of monoquinone structure by a simple facility and process. SOLUTION: In obtaining a dicyanomethylene compound of monoquinone structure by using a quinone-based compound, malononitrile and a Lewis acid as raw materials and a base having a base dissociation constant larger than that of 2,6-dimethylpyridine as a catalyst, a reaction terminator is added to a reaction solution to deactivate the catalyst. Since the reaction is not excessively advanced, the dicyanomethylene compound is not decomposed. An acid such as hydrochloric acid or the like having an acid dissociation constant higher than the base dissociation constant of the base is preferably used as the reaction terminator.
Patent JP-S5974092-A (JP)
Inventor: KINOSHITA KINJIROU
IPC: G01G13/18
Filed: 1982-10-05
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5963801-A (JP)
Title: Dielectric filter
Inventor: NISHIKAWA TOSHIO
IPC: H01P1/20
Filed: 1982-10-04
Abstract: PURPOSE:To make the coefficients of linear expansion of cylindrical dielectric bodies and a case arranging said dielectric bodies coincide with each other and to improve the temperature characteristics of central frequency by forming the plural cylindrical dielectric bodies constituting a dielectric filter and at least a part of the case by the same dielectric material. CONSTITUTION:A filter body part 11 is equipped with a dielectric case side part 14 and dielectric cylindrical parts 16-18 arranged in a cave 15 formed by the side part 14. Each of the cylindrical parts 16-18 is coupled with a case by two coupling parts 19 and all the parts 16-18 are formed unitedly with the side part 14. A conductive film 20 is formed on the whole external surface of the side part 14. Conductive films 21, 22 are also formed on the upper surface of an upper cover 12 and the lower surface and side of the side part 14. When the covers 12, 13 are set up, shielding and a real current path corresponding to an ordinary metallic case is formed by the films 21, 22 and the peripheral film 20 of the body part 11. Since the cylindrical dielectric bodies and the cases are constituted by the same material, the coefficients of linear expansion of both parts are made coincide, so that a minute gap between the end surface of the dielectric body and the surface of the case is made constant independently of temperature change and the temperature characteristics of the central frequency of the filter are extremely improved.
Patent JP-S6065537-A (JP)
Title: Substrate material for semiconductor device
Inventor: OGASA NOBUO
IPC: H01L23/14
Filed: 1983-09-20
Abstract: PURPOSE:To smoothly dissiplate Joule heat generated by a semiconductor element by employing an iron mesh material as an intermediate layer of a sintered material, thereby improving the thermal conductivity of thicknesswise direction of a substrate material. CONSTITUTION:An intermediate layer 1 of coper or copper alloy sintered material 2 is composed of iron-nickel alloy, and a rate of occupying the mesh material is set by volumetric ratio to 30% or higher as an intermediate layer in the sintered material, and the thermal expansion coefficient of a substrate material is set to 10.0X10<-6>/ deg.C or less. For example, a wire material made of 36%-nickel- iron alloy (Amber) is used to form a wire gauze of 200 mesh. On the other hand, as a sintered material Cu power of -250 mesh is filled in a compression injection mold cavity, tapping is executed, the gauze material is disposed in parallel with the punch surface. Thereafter, the Cu powder is again filled, tapping is performed, and compression molding is performed, and then compression molded product is sintered at 800-900 deg.C.
Patent JP-S6066514-A (JP)
Title: Piezoelectric device
Inventor: OGAWA TOSHIO
IPC: H03H9/17
Filed: 1983-09-21
Abstract: PURPOSE:To change easily the center frequency of oscillation and reduce the impedance fall even if higher-mode oscillation is used, by forming parts, which are displaced in directions opposite to each other, alternately in parallel with the surface in piezoelectric ceramics to generate bulk waves in the direction parallel with the surface of piezoelectric ceramics. CONSTITUTION:Electrodes 21a and 21b for polarization are formed on the longer side face of a layer-built structure body. Electrodes 21a and 21b for polarization are formed in parts where electrodes constituting individual electrode groups 11-15 are led out to the longer side of ceramic layers 1 and 2. Next, electrodes 21a and 21b for polarization are eliminated by cutting or grinding, and external electrodes 24 and 25 are formed on shorter side faces 22 and 23. The external electrode 24 is connected to electrodes 11a, 13a, and 15a in end parts of electrode groups 11, 13, and 15, and the other external electrode 25 is connected to electrodes 12b and 14d placed in end parts of electrode groups 12 and 14.
Patent JP-H0223845-A (JP)
Title: Method for heat treatment in producing dough for thin fried bean curd
Inventor: AKIYAMA KAZUNORI
IPC: A23L11/00
Filed: 1988-07-13
Abstract: PURPOSE:To uniformly and surely heat raw soybean milk in a short time without using a cooker for exclusive use by adding hot water to raw soybean milk in a high concentration. CONSTITUTION:Hot water is added to raw soybean milk obtained form raw material soybeans in 10-12 deg. concentration which is higher than a conventional concentration 5-6 deg. to provide 85-95 deg.C temperature and 5-6 deg. concentration and carry out heat treatment. The heat-treated raw soybean milk is then subjected to coagulation, casting into boxes, pressing and cutting steps to afford the objective dough for thin fried bean curd.
Patent JP-S6236443-A (JP)
Title: Production of flame-retardant styrene resin composition
Inventor: TAKAHASHI YASUSHI
IPC: C08L7/00
Filed: 1985-08-12
Abstract: PURPOSE:To obtain the titled compsn. having excellent flame retardance and resistance to heat, impact and weather and useful as a housing material of electrical appliances, by melt-kneading a specified resin and a diol in a styrene resin in the presence of a catalyst. CONSTITUTION:0.1-10mol of an arom. diol contg. halogen (e.g. tetra bromobisphenol A) is blended with 1mol of a halogen-contg. epoxy resin of formula I (wherein R is a group of formula II or III; X is Br, Cl; i is 1-4; m is o or a natural number). 0.01-5wt% reaction accelerator such as an amine compd. as a reaction accelerating catalyst is added to the resulting blend. The mixture is melt-kneaded in a PS resin matrix to extend the molecular chain, thus obtaining a flame-retardant styrene resin compsn.
Patent JP-S6072887-A (JP)
Inventor: HANSU HOEN
IPC: A61K31/41
Filed: 1984-08-22
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6335557-A (JP)
Title: Purification of thiocarbamylsulfenamide
Inventor: ENRITSUKU GAZUMAN REINESU
IPC: C07C333/20
Filed: 1986-07-28
Abstract: Thiocarbamylsulfenamides are readily recover­ed from solutions of the thiocarbamylsulfenamides by the addition of a dilute aqueous caustic solution, to flash off the solvent separating the thiocarbamylsul­fenamide from the resulting water slurry and drying the thiocarbamylsulfenamide.
Patent JP-H1126721-A (JP)
Title: Semiconductor device and manufacture thereof
Inventor: FUJIISHI YOSHITAKA
IPC: H01L27/108
Filed: 1997-07-01
Abstract: PROBLEM TO BE SOLVED: To secure a sufficient thickness of an interlayer insulating film on a bit line in a region other than a capacitor forming region in a memory cell of a COB(capacitor over bit line) structure, and realize simplification of a photographic plate-making step at the time of forming a storage node and uniformity of capacitor capacitance. SOLUTION: In forming a storage node on interlayer insulating films 7, 10, undoped silicon oxide films are formed as the interlayer insulating film 7, 10, and a BPSG(borophosphosilicate glass) film having a high selection ratio with respect to undoping is formed on the surface. After an etching mask is formed on the BPSG film, anisotropic etching is carried out to form an aperture corresponding to a storage node contact 11. Also, isotropic etching is carried out to the BPSG film by dehydrated vapor phase HF processing, thus forming an aperture for producing the storage node 11. After a conductive substance is buried in the aperture to form the storage node 11, the BPSG film is removed by dehydrated vapor phase HF processing.
Patent JP-S5963941-A (JP)
Title: Wound core for axial air gap rotary electric machine
Inventor: TAKAMIYA YUTAKA
IPC: H02K1/16
Filed: 1982-10-05
Abstract: PURPOSE:To facilitate the match of slots and the check of a central position by forming notched grooves extending toward the steel band laminating direction at the position not opposite to the slots of a yoke at the side opposite to the slots of a wound core. CONSTITUTION:A steel band 5 is punched at the notch 6 at the position P11, a wound core S of radius r1 is rotated in a direction of an arrow I to wind it. As the winding and laminating are advanced, the positin of a punch (A) is moved toward the position P12 along the locus (J). Thus, when the core S is intermittently rotated in a direction of an arrow I sychronously with the punch (A) at the prescribed indexing angle, several radial notched grooves 3 can be obtained. On the other hand, when slots 7 are punched at the position P21 isolated by distance DELTAl from the position P11 slots 2 with skew are formed.
Patent JP-H0926367-A (JP)
Title: Strain detecting sensor
Inventor: FUKUHARA SATOSHI
IPC: H01L29/84
Filed: 1995-07-12
Abstract: PROBLEM TO BE SOLVED: To reduce the effect of a thermal strain by fitting a base formed into the shape of U by joining two parallel beams by another beam to a place where repugnant stresses are applied to the two parallel beams respectively and where a shearing force of an object of measurement is generated by the impression of a load on the opposite ends of the base, and providing strain detecting elements on the neutral axes of the parallel beams. SOLUTION: One end 21a of a cantilever 21 made of aluminum is fixed and a measuring load F is impressed on the other end 21b. A base 22 made of silicon is made up of a first beam 221, a second beam 222 parallel thereto and a third beam 223 joining these beams in the shape of U. The opposite ends 22a and 22b of the base 22 are set at a place where a shearing force of an object of measurement is generated by the impression of the load F so that a tensile force is applied to the beam 221 and a compressive force to the beam 222, for instance, with the central axis of the base 22 inclined at an angle of 45 degrees to the axial direction of the cantilever 21. Strain detecting elements 23 are provided on the neutral axes of the beams 221 and 222 and thereby, the respective tensile and compressive strains of the beams are detected.  By taking a difference between signals from the two elements 23, the load F can be detected and also the effect of a temperature strain is canceled.
Patent JP-2000005647-A (JP)
Title: Spray gun
Inventor: KUWABARA TATEO
IPC: B05B7/12
Filed: 1998-06-23
Abstract: PROBLEM TO BE SOLVED: To provide a spray gun capable of accurately regulating the spray amt. of liquid without causing a liquid leak. SOLUTION: A spray gun 1 ejecting liquid from a nozzle 3 and mixing the same with compressed air to spray the liquid is separately provided with a low rate regulating mechanism 6 regulating the supply amt. of the liquid to the nozzle 3 and a liquid stop mechanism 7 capable of prescribing the supply of the liquid to the nozzle 3. Since the liquid amt. regulating mechanism 6 and the liquid stop mechanism 7 are separately provided, even if the liquid stop mechanism 7 is constituted so that a liquid leak is not generated under a sivere use condition such as intermittent spraying or the like, the accuracy of the regulation of a liquid amt. is not lost.
Patent JP-S6236848-A (JP)
Title: Internal power source voltage generating circuit of semiconductor integrated circuit
Inventor: MORI SHIGERU
IPC: H01L21/822
Filed: 1985-08-09
Abstract: PURPOSE:To obtain a circuit having a low power consumption and a low output impedance by composing of the first and second reference voltage generating circuits, and output stages of N-channel and P-channel MOS transistors controlled by the outputs of the generators. CONSTITUTION:When an external power source is Vcc and the threshold value of a P-channel MOS transistor Q6 is V THP, a voltage of 1/2Vcc-¦V THP¦ is applied to the gate of the transistor Q6 which forms an internal power source output stage 7, and the transistor Q6 generates a voltage higher by ¦V THP¦ from the gate applying voltage. In other words, Vo=1/2Vcc-¦V THP¦+¦V THP¦=1/2Vcc is satisfied, and a current flowing to a ground terminal from the Vcc becomes zero in the stage 7. In the reference voltage generating circuits 3 and 6, a current flowing to the ground terminal from the Vcc can be extremely reduced by increasing the values of R1, R2, R4 and R5.
Patent JP-S5965795-A (JP)
Inventor: SUMIYAMA SHIGEAKI
IPC: G21C17/00
Filed: 1982-10-08
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0624880-A (JP)
Title: Metal-ceramic material and production thereof
Inventor: HIRANO MASANORI
IPC: B23K1/19
Filed: 1992-07-03
Abstract: PURPOSE:To provide a metal-ceramic composite material excellent in repeated thermal shock resistance and high in reliability and the production method thereof. CONSTITUTION:The metal-ceramic composite material is provided with an alumina or aluminum nitride substrate 1 and at least two layers of tungsten metal layer 3, 5 different from each other in sintering density. Copper or copper alloy 2, 4 is contained in the space between the tungsten particles of the tungsten metal layer. As a result, the thermal stress generated at the boundary different in physical property is mitigated even in an environment of heat shock or heat cycle which gives ambient temp. change or repeated thermal shock and the composite material excellent in durability and reliability is obtained.
Patent JP-H116038-A (JP)
Title: Rare earth permanent magnet material
Inventor: KATAOKA MITSUMUNE
IPC: H01F1/053
Filed: 1997-06-16
Abstract: PROBLEM TO BE SOLVED: To obtain the rare earth permanent magnet material, which has large crystal magnetic anisotropy and belongs to a R-Fe group compound having a high Curie temp by specifying the relationship among each element content expressed in a specified formula. SOLUTION: The rare earth permanent magnet material is expressed in a general formula of Rx Fe(100-x-y-z) Coy Mz . Here, R is a rare earth element at least containing Y, M contains at least one kind among Ti, V, Mo, W, Si, Cr, Mn. Further, (x), (y), (z) are respectively in a range of 8.5%<=x<=14.0% (by at.%), 5.0%<=y<=45% (by at.%), 0<=z<=15% (by at.%) and the material is an intermetallic compound in which a primary phase is hexagonal structure. Thus, by adding prescribed adding elements to the R-Fe group magnet material, a TbCu7 type hexagonal structure quaternary compound (R-Fe-Co-M) phase is stabilized, the rare earth permanent magnet material excellent in magnetic property is obtained.