Patent SG-11201900622U-A (SG)
Title: Chemically amplified positive photoresist composition and pattern forming method using same
Inventor: TAKAICHI TETSUMASA
IPC: G03F7/40
Filed: 2017-10-10
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 19 April 2018 (19.04.2018) WIP0 1 PCT ~~ll~~~~~~~~ 011101010VIIIOH olo omoionoi mo Immo ow (10) International Publication Number WO 2018/069274 Al (51) International Patent Classification: TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, G03F 7/039 (2006.01) GO3F 7/40 (2006.01) KM, ML, MR, NE, SN, TD, TG). G03F 7/38 (2006.01) (21) International Application Number: (22) International Filing Date: PCT/EP2017/075738 Published: — with international search report (Art. 21(3)) 10 October 2017 (10.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16002196.0 12 October 2016 (12.10.2016) EP (71) Applicant: AZ ELECTRONIC MATERIALS (LUX- EMBOURG) S.A.R.L. [LU/LU]; 46 Place Guillaume II, 1648 Luxembourg (LU). (72) Inventors: TAKAICHI, Tetsumasa; c/o Merck Perfor- mance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). KAWATO, Shunji; c/o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa- shi, Shizuoka 437-1412 (JP). SUZUKI, Masato; c/o Mer- ck Performance Materials Ltd., 3330, Chihama, Kakegawa- shi, Shizuoka 437-1412 (JP). AKASHI, Kazumichi; c/ o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). KATAYAMA, Tomohide; c/o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). (74) Agent: B2B PATENTS; c/o Merck Patent GmbH, 64271 Darmstadt (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, 1-1 TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, 71' MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, © (54) Title: CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING SAME 1-1 O (57) : The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises \" (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali- soluble vinyl resin and an acid- dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.