baber/WOPTO huggingface dataset:
Patent TW-I229006-B (TW)
Title: Amusement apparatus
Inventor: YAMADA SABURO
IPC: A63G23/00
Filed: 2004-07-28
Granted: 2005-03-11
Abstract: An amusement apparatus of simple construction in which rides can be turned without providing each of the rides with a driving mechanism for turning the ride, in circulation around a vertical axis, inward and outward. A circular floor board rotating around a first vertical axis, plural rides for passengers disposed on the circular floor board and each of which is rotatable around a second vertical axis, a guide rail of loop disposed along a rotational locus of the ride around the first vertical axis, and a turning mechanism to turn a seat portion of the ride inward and outward by leading the ride on the circular floor board by the guide rail and rotating the ride for 180 DEG around the second vertical axis on a predetermined position on the guide rail, are provided.
Patent TW-I278808-B (TW)
Title: Plasma display panel and plasma display apparatus
Inventor: SASAKI TAKASHI
IPC: G09F9/313
Filed: 2004-09-09
Granted: 2007-04-11
Abstract: A plasma display panel (PDP) not only capable of reducing a discharge start voltage but also of making the discharge start voltage uniform in each cell without being adversely affected by the variations in the distance between electrodes caused during manufacture has been disclosed, wherein a pair of electrodes, provided in each of a plurality of cells respectively in which a discharge is caused to occur selectively for display in a discharge space, has facing edges, respectively, provided for discharge and the distance between the facing edges changes when viewed from a direction perpendicular to a substrate and the edges in each of the plurality of cells have substantially the same shape.
Patent TW-I242783-B (TW)
Title: Cut via structure for and manufacturing method of connecting separate conductors
Inventor: WU SHIN-HSIEN
IPC: H05K1/11
Filed: 2004-10-20
Granted: 2005-11-01
Abstract: A cut via structure for and manufacturing method of connecting separate conductors are provided. The cut via structure is electrically connected to a substrate. It comprises at least two separate conductors. The separate conductors are formed with a central hollow or filling structure. At least one gap among the separate conductors is formed in a vertically-cut or slantly-cut direction with respect to the cut via structure. The cut via structure further comprises a filling layer filled in between the separate conductors. According to the material of the filling layer, the cut via structure may be used as a capacitor, a resistor, or for signal shielding. The manufacturing method can be further achieved after the conventional cut via structure that is without signal shielding effect. It has the advantages of low manufacturing cost and adjustable electricity characteristics.
Patent TW-I243768-B (TW)
Title: Self-control device of adaptive head light
Inventor: LI WANG-SHIUAN
IPC: B60Q1/06
Filed: 2004-10-28
Granted: 2005-11-21
Abstract: The present invention relates to a self-control device of adaptive head light, which is mainly composed of a microprocessor, a road condition sensing unit, a motor driver, and a connection interface. The microprocessor detects road conditions, such as turn, uphill and downhill, through the sensing unit for road condition, further controls a lighting angle of head light through the motor driver, and controls to light up the head light via the connection interface. As such, the present invention can provides a self-control device of an adaptive head light, which won't require driver to personally switch off the head light and can illuminate dead angle of light of sight in advance while driving at night, thereby effectively enhancing driving safety.
Patent TW-I397135-B (TW)
Title: Semiconductor device
Inventor: KANZAKI TERUAKI
IPC: H01L23/52
Filed: 2005-02-24
Granted: 2013-05-21
Abstract: The present invention aims at offering the semiconductor device which can improve the strength to the stress generated with a bonding pad. In the semiconductor device concerning the present invention, a plurality of bonding pads are formed on a semiconductor chip. In each bonding pad, a plurality of second line-like metals are formed under the first metal formed using the wiring layer of the top layer. And a bonding pad is put in order and located along the long-side direction of a second metal to achieve the above objects. That is, a bonding pad is put in order and located so that the long-side direction of a second metal and the arrangement direction of a bonding pad may become in the same direction.
Patent TW-I274623-B (TW)
Title: Power source for electric arc welding
Inventor: DANIEL JOSEPH A
IPC: B23K9/10
Filed: 2005-03-11
Granted: 2007-03-01
Abstract: A power source for an electric arc welding process, wherein the power source comprises an input stage having an AC input and a first DC output signal; a second stage in the form of an unregulated DC to DC converter having an input connected to the first DC output signal and an output in the form of a second DC output signal electrically isolated from the first DC output signal and with a magnitude of a given ratio to the first DC output signal; and, a third stage to convert the second DC output signal to a welding output for the welding process.
Patent TW-I270417-B (TW)
Title: Method for weaving and recycling molten disposals
Inventor: HU YAU-JUNG
Filed: 2005-04-18
Granted: 2007-01-11
Abstract: This invention relates to a method for weaving and recycling molten disposals, including the steps of: melting disposals into high-temperature molten liquid; exhausting the high-temperature molten liquid to melting furnace, treating the molten liquid to form cured molten fibers, wherein the step of melting disposals into high-temperature molten liquid subjects the disposals to be introduced into the melting furnace and heated under high temperature to form a liquid fluid, and the step of exhausting the high-temperature molten liquid to melting furnace subjects the high-temperature molten liquid that has been subjected to the heating step to exhaust from the melting furnace to where the weaving equipment is located; and the step of treating the molten liquid cures the high-temperature molten liquid that has not yet cured into solid molten fibers by means of the weaving equipment.
Patent TW-I267229-B (TW)
Title: Earphone antenna and portable radio equipment provided with earphone antenna
Inventor: YOSHINO YOSHITAKA
IPC: H01Q9/18
Filed: 2005-05-18
Granted: 2006-11-21
Abstract: Earphone antenna is provided in which audio signal transmission path is formed by connecting first shield wire of coaxial cable to ground, connecting central conductor of coaxial cable to one of first signal lines, as well as to other one of first signal lines via capacitor which becomes high impedance in frequency band of audio signal and low impedance in frequency range of high frequency signal, and by connecting second signal line and grounding wire respectively to first signal lines via high frequency choke which becomes low impedance in frequency range of audio signal and high impedance in the frequency range of high frequency signal; and wherein by connecting ground to second shield wire which covers external of coaxial cable, second signal line and grounding wire, sleeve antenna is provided which includes earphone cable and second shield wire.
Patent TW-I268669-B (TW)
Title: System and method for wireless signal transmission establishing an inter-transmission and exchange of files between a computer peripheral and a host system through a wireless signal transmission module
Inventor: Luo shao-hong
IPC: H04B7/00
Filed: 2005-05-27
Granted: 2006-12-11
Abstract: A wireless signal transmission system and method establishes an inter-transmission and exchange of files between a computer peripheral and a host system through a wireless signal transmission module. The system at least has an integrated Bluetooth module and a USB chip, which can intelligently identify and convert the type of wireless data format into wired interface data format. Through the wired interface port in connection with the host system, the type of the computer peripheral is reported to the host system. Accordingly, various drivers for different wireless peripherals need not be installed repeatedly, so as to increase the convenience and usefulness of the operation.
Patent TW-I279363-B (TW)
Title: Plastic zipper bag and zipper head structure
Inventor: CHEN CHUN-SHAN
IPC: B65D33/25
Filed: 2005-06-02
Granted: 2007-04-21
Abstract: The present invention relates to a plastic zipper bag and a zipper head structure. The zipper seal of the zipper bag and the pressed end of the zipper head are formed into a trapezoid shape, and the zipper seal are sealed by two corresponding clipping parts. One end of the zipper head is a pressed end, and the other end is a thrusting end. By the upper and the lower stopper installed at the thrusting end, and the upper restraining piece and the lower restraining piece, the sealed two clipping parts may be released through a vertical displacement so as to form an opening on the zipper seal. Thus, the zipper head may open the zipper seal without the installation of a thrusting piece, and the zipper bag may be closed tightly with this simple, effective design.
Patent TW-I280990-B (TW)
Title: Etching device for electroplating substrate
Inventor: SUGAWARA KIYOSHI
IPC: B05B1/14
Filed: 2005-07-12
Granted: 2007-05-11
Abstract: The technical subject matter of this invention is to provide a kind of etching device for electroplating substrate. The objective to be achieved is that first it makes the thickness of copper film homogeneous to achieve uniform etching, e.g. eliminating too much or too less in circuit width, non-uniformity, errors, defects, etc to form high density, very fine and extreme fine circuit. Second, it is also easily implemented and superior in cost or space aspect. The means for solving such technical subject matter in this invention is that said etching device 3 is used in the manufacturing of circuit substrate. It sprays etching solution to etch electroplated substrate A which is conveyed horizontally. Additionally, there is a region 13 to etch the front and rear ends F and left and right ends G of substrate A intensively. Said region is provided with multiple spray tubes 14, 15 which are disposed in left and right width direction K, and spray nozzles which are disposed at the spray tubes 14, 15 and spray etching solution at the front and rear ends F and left and right ends G of substrate A.
Patent TW-I277464-B (TW)
Title: 3-D forming method and device for metallic plate
Inventor: LI FU-TANG
IPC: B21D31/00
Filed: 2005-09-05
Granted: 2007-04-01
Abstract: This invention relates to a 3-D forming method for metallic plate, including the steps of: placing a metallic plate into a forming device, and compressing and forming the metallic plate on a carving mold through the manner of heating and compressing, so as to achieve the object of fabricating delicate product like metallic nameplate, placard, embossed engraving, and casing. The forming device comprises carving mold, mold ejecting device, sealing mold, and compressing device.
Patent TW-I351145-B (TW)
Title: Connection module for telecommunications and data technology
Inventor: NEUMETZLER HEIKO
IPC: H01R13/518
Filed: 2005-09-09
Granted: 2011-10-21
Abstract: A connection module that mounts to a frame includes a housing and electrical contacts positioned on different ends of the housing. A first fixing member defines a channel sized to receive at least a portion of a frame. A second fixing member is moveable relative to the first fixing member to extend at least partially across the channel of the first fixing member.
Patent TW-I282143-B (TW)
Title: Method of fabricating silicone nitride layer and method of fabricating semiconductor device
Inventor: CHEN NENG-KUO
IPC: H01L21/76
Filed: 2005-09-26
Granted: 2007-06-01
Abstract: A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an atmosphere lower than the standard atmospheric pressure. Through the UV curing treatment, the tensile stress of the silicon nitride layer is increased.
Patent TW-I284368-B (TW)
Title: Gas diffusion plate and manufacturing method for the same
Inventor: WATANABE KEISUKE
IPC: H01L21/3065
Filed: 2005-09-30
Granted: 2007-07-21
Abstract: A gas diffusion plate has an alumina or an aluminum base material provided with one or more through holes and an yttria body shrink-fitted to one of the through holes and provided with one or more gas discharge holes.
Patent TW-I273028-B (TW)
Title: Colorful plate and its manufacturing thereof
Inventor: LEE TSUNG-HSIANG
IPC: B29C70/46
Filed: 2005-10-28
Granted: 2007-02-11
Abstract: A colorful plate and its manufacturing thereof are disclosed. A compound with color material and a resin is first sprayed on a sliced fiber layer. Next, the fiber layer with the compound thereon is heated and pressed to form a predetermined shape. Wherein, the compound can be firstly sprayed on inside walls of a mold. After that, the fiber layer is placed on the compound. Alternatively, the compound is firstly sprayed on one side of the fiber layer. Then, the fiber layer with the compound thereon is placed in a mold. After heating and pressing in the mold, the fiber layer with the compound thereon can form a colorful plate and show cubic lines on its surface.
Patent TW-I281262-B (TW)
Title: Manufacturing method of thin film transistor
Inventor: SHEN CHIA-NAN
IPC: H01L29/786
Filed: 2005-11-30
Granted: 2007-05-11
Abstract: The invention is directed to a manufacturing method of a thin film transistor. First, a buffer layer is formed on a substrate, and then a first poly-silicon island and a second poly-silicon island are formed on the buffer layer. A gate-insulating layer is formed on the substrate, and a first gate and a second gate are formed on the gate-insulating layer, respectively. A sacrificed layer is formed on the substrate and a photo-resist layer is formed on this sacrificed layer. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. Following that, a first ion implantation process is performed to form a first source/drain within the first poly-silicon island. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain within the second poly-silicon island Also, at the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the first gate. Later, a lightly-doped ion implantation process is performed after removing the sacrificed layer.
Patent TW-I289909-B (TW)
Title: A semiconductor device and method of fabricating the same, and a memory device
Inventor: TU KUO-CHI
IPC: H01L27/105
Filed: 2006-01-02
Granted: 2007-11-11
Abstract: A one-transistor random access memory device integrated on a silicon-on-insulator (SOI) substrate has a capacitor structure buried in at least part of a capacitor trench in the SOI substrate. A top electrode the capacitor structure is formed simultaneously with and of the same conductive material as a gate electrode of the gate structure. A capacitor dielectric layer of the capacitor structure is formed simultaneously with and of the same dielectric material as a gate dielectric layer of the gate structure.
Patent TW-I267150-B (TW)
Title: Cavity structure for semiconductor structure
Inventor: YU HSIU-MEI
IPC: H01L21/56
Filed: 2006-01-10
Granted: 2006-11-21
Abstract: A method for providing a cavity structure on a semiconductor device is provided. The method of forming the cavity structure, which may be particularly useful in packaging an image sensor, includes forming a spacer layer over a substrate. The spacer layer may be formed from a photo-sensitive material which may be patterned using photolithography techniques to form cavity walls surrounding dies on the wafer. A packaging layer, such as a substantially transparent layer, may be placed directly upon the cavity walls prior to curing. In another embodiment, the cavity walls are cured, an adhesive is applied to surface of the cavity walls, and the packaging layer is placed upon the adhesive. Thereafter, the wafer may be diced and the individual dies may be packaged for use.
Patent TW-I381991-B (TW)
Title: Clay comprising charge-balancing organic ions and nanocomposite materials comprising the same
Inventor: SCHOMAKER ELWIN
IPC: C01F7/00
Filed: 2006-12-06
Granted: 2013-01-11
Abstract: The invention relates to a process for preparing an organically modified layered double hydroxide having a distance between the individual layers of the layered double hydroxide of above 1.5 nm and comprising an organic anion as charge-balancing anion, the process comprising the steps of: (a) preparing a precursor suspension comprising a divalent metal ion source and a trivalent metal ion source;(b) solvothermally treating the precursor suspension to obtain the layered double hydroxide, wherein an organic anion is added before or during the formation of the layered double hydroxide of step (b), or following the formation of the layered double hydroxide, so as to obtain the organically modified layered double hydroxide, with the proviso that deoxycholic acid is not the sole organic anion.; The invention further pertains to a process for preparing an organically modified layered double hydroxide having a distance between the individual layers of the layered double hydroxide of above 1.5 nm and comprising an organic anion as charge-balancing anion, the process comprising the steps of: (a) preparing a precursor suspension comprising a divalent metal ion source and a trivalent metal ion source; (b) thermally treating the precursor suspension to obtain the layered double hydroxide, wherein an organic anion is added before or during the formation of the layered double hydroxide of step (b), or following the formation of the layered double hydroxide, so as to obtain the organically modified layered double hydroxide, with the proviso that in step a) the trivalent metal ion source is not reacted with the organic anion at a temperature of between 60 and 85 DEG C for 4 to 8 hours prior to the addition of the divalent metal ion source and step b) is subsequently carried out at a temperature of 90 to 95 DEG C for 4 to 8 hours.
Patent TW-I405791-B (TW)
Title: Ultraviolet curable resin composition having a polyfunctional oxetanyl group
Inventor: YOKOTA KOUICHI
IPC: C08L75/04
Filed: 2007-03-28
Granted: 2013-08-21
Abstract: An ultraviolet curable resin composition, which comprises a cationic photopolymerization initiator (B) and a urethane prepolymer (A) having a structure represented by the general formula (1);   
(wherein R 1  and R 2  each independently represent an alkylene group, R 3 , R 4  and R 5  each independently represent an alkyl group or hydrogen atom, R 6  and R 7  each independently represent an alkylene group having 2 to 4 carbon atoms, a represents 0 or 1, and b and c each independently represent an integer of 0 to 10).
Patent TW-I414638-B (TW)
Inventor: TAKAHIRO SAITO
IPC: H05K3/38
Filed: 2007-05-14
Granted: 2013-11-11
Abstract: A surface treated electrodeposited copper foil having a smooth M surface; a surface treatment is performed on the M surface being an opposite surface of a surface which contacted with a drum in an electrodeposited copper foil, wherein Rz is 1.0 μm or smaller and Ra is 0.2 μm or smaller on the M surface, electrodeposited copper plating is performed to produce a copper foil under a condition of using a copper sulfate bath, wherein a copper concentration is 50 to 80 g/l, a sulfuric acid concentration is 30 to 70 g/l, a solution temperature is 35 to 45° C., a chloride concentration is 0.01 to 30 ppm, an adding concentration of a total of an organic sulfur based compound, low molecular weight glue and polymeric polysaccharide is 0.1 to 100 ppm and TOC is 400 ppm or smaller, and a current density is 20 to 50 A/dm2.
Patent TW-I413071-B (TW)
Title: Driving method and related device for reducing power consumption in lcd
Inventor: HSU CHIN HUNG
IPC: G09G3/36
Filed: 2008-06-11
Granted: 2013-10-21
Abstract: A driving method is provided for reducing power consumption of a liquid crystal display. The driving method includes steps of sequentially receiving first data and second data, determining whether the second data is the same as the first data, and controlling a data-line driving circuit not to read in driving data corresponding to the second data when the second data is the same as the first data.
Patent TW-I409076-B (TW)
Title: Medical herb composition for increasing inflammation, swell and pain, method for manufacturing medical herb abstract, application for the same
Inventor: WU TIAN SHUNG
IPC: A61K36/898
Filed: 2009-08-28
Granted: 2013-09-21
Abstract: A medical herb composition for increasing inflammation, swell and pain includes first and herb materials. The first herb material includes Bletillae Rhizoma, Cinnamomi Cortex, Angelicae Dahuricae Radix, Angelicae sinensis Radix, Paeoniae Radix, Notopterygii Rhizoma Et Radix, Linderae Radix, Glycyrrhizae Radix, Angelicae pubescentis Radix, and Rheiradix Et Rhizoma. The second herb material is selected from one, two or three of the group consisting of Zingiber officinale, Qlibanum and Myrrha. Additional material (Zingiber officinale, Qlibanum and Myrrha) of the medical herb composition of the present invention can increase curative effect. In addition, the present invention discloses the process for manufacturing abstract. For example, the first and herb materials and an organic solvent are put into a vessel, is heated and extracted, is filtered during heating. Then, the extracted filtrate is concentrated to an extract. Compared with the conventional prescription, the relative steps of the process for manufacturing abstract of the medical herb composition of the present invention have no disadvantage of the conventional prescription.
Patent TW-I408887-B (TW)
Title: Dc-ac conversion circuit with wide input voltage level
Inventor: KU CHEN WEI
IPC: H02M7/539
Filed: 2009-12-29
Granted: 2013-09-11
Abstract: A DC-to-AC converting circuit includes a transformer, a first modulation switching circuit, a second modulation switching circuit and a third modulation switching circuit, an inverter switching circuit and a controlling unit. Under control of the controlling unit, two of the first, second and third modulation switching circuits are selectively enabled according to the magnitude of the input voltage, so that electric energy of the input voltage is magnetically transmitted to the first primary winding, a second primary winding or a serially-connected winding assembly of the first primary winding and the second primary winding, and a turn ratio of the transformer is adjustable.
Patent TW-I410724-B (TW)
Title: Active device array substrate
Inventor: YANG CHING JUNG
IPC: G02F1/1343
Filed: 2009-12-31
Granted: 2013-10-01
Abstract: An active device array substrate including a substrate, scan lines, data lines, active devices, a first dielectric layer, a common line, a second dielectric layer, a patterned conductive layer, a third dielectric layer, and pixel electrodes is provided. At least a part of the active devices are electrically connected to the scan lines and the data lines. The first dielectric layer covers the scan lines, the data lines and the active devices. The common line is disposed on the first dielectric layer. The second dielectric layer covers the common line and the first dielectric layer. The patterned conductive layer is disposed on the second dielectric layer. The third dielectric layer covers the patterned conductive layer and the second dielectric layer. The pixel electrodes are disposed on the third dielectric layer and electrically connected to the patterned conductive layer and the active devices.