baber/WOPTO huggingface dataset:
Patent TW-350042-B (TW)
Title: Toner for developing electrostatic image
Inventor: MATSUNAGA SATOSHI
IPC: G03G9/00
Filed: 1995-12-16
Granted: 1999-01-11
Abstract: A sort of toner for developing electrostatic image, including: a binder resin, a colorant and a wax; where the toner is designed to have (a) a storage modulus at 100 DEG C (G^100) of 1x10<4> Pa to 5x10<4> Pa, and (b) a storage modulus at 60 DEG C (G^60) and a storage modulus at 70 DEG C (g70) providing a ratio (G^60/G^70) of at least 30.
Patent TW-306886-B (TW)
IPC: B01D71/64
Filed: 1996-07-04
Granted: 1997-06-01
Abstract: A vapor permeation module for removing a vapor from a feed stream is disclosed that utilizes highly solvent-resistant composite hollow fibers and a permeate flow that is countercurrent to the feed flow.
Patent TW-333582-B (TW)
Title: Screen apparatus
Inventor: TSUCHIDA OSAMU
IPC: E06B9/52
Filed: 1996-07-13
Granted: 1998-06-11
Abstract: A screen apparatus in which two pairs of frames opposed in up and down and right and left are provided, and one pair of frames among them are made as screen mounting frames to mount screen members between them in a contractible and developable manner to bear, the other pair of frames form respectively slide-guide frames, which is characterized in that one of the screen mounting frames or each of them is movable in contractible and developable directions of the screen members, the slide-guide frames are provided with bending elasticity, each of them is fixed to one of the screen mounting frames in one end of each of them, and the other end is bent and slid along the other of the screen mounting frames, in a specific bending and sliding position, specific intervals between the screen mounting frames opposed to each other can be maintained.
Patent TW-442295-B (TW)
Title: Stable freeze-dried pharmaceutical composition
Inventor: BOULOUMIE COLETTE
IPC: A61K47/18
Filed: 1996-11-22
Granted: 2001-06-23
Abstract: The subject of the invention is a freeze-dried formulation consisting of an amorphous phase and a crystalline phase, which is pharmaceutically acceptable, comprising at least one nonprotein active ingredient, characterized in that it contains mannitol and alanine in a ratio R of between 0.1 and 1; R representing the mass of mannitol to the mass of alanine.
Patent TW-311968-B (TW)
Title: Spark ignition type two-stroke internal combustion engine with a control apparatus thereof
Inventor: ISOMURA SHINICHI
IPC: F02B11/00
Filed: 1996-11-22
Granted: 1997-08-01
Abstract: A spark ignition type two-stroke internal combustion engine with a control apparatus thereof provided with capabilities of driving the exhaust valve as to control the entrance and the inside section area of the scavenge according to the revolution of engine or the opening of the throttle, and combusting the fresh mixture in the combustion room by automated spark ignition while under a low loading operation; the character thereof being that the volume of the combustion room is adjustable according to the revolution of engine.
Patent TW-324060-B (TW)
Title: Probe for temperature measurement
Inventor: KLAUS HAMMER
IPC: G01K7/02
Filed: 1996-12-23
Granted: 1998-01-01
Abstract: A probe for temperature measurement comprises a probe body which has a cylindrical hole into which a thermocouple or a resistance thermometer can be inserted, whose thermosensitive tip projects from the forward section of the probe body, the forward section of the probe body being provided with an annular gap at a small distance from the cylindrical hole.
Patent TW-330867-B (TW)
Title: Sprue bush device for a hot chamber metal die casting machine
Inventor: EUGEN SCHWARZKOPF
IPC: B22D17/22
Filed: 1997-02-14
Granted: 1998-05-01
Abstract: A sprue bush device for a hot chamber metal die casting machine is claimed. In which the sprue bush having a passage duct for moten metal is inserted in a tool part and is supported on the latter and the passage duct is connected, on the one end, to a metal feed device and, on the other end, to a cavity in the tool. The invention is characterized in that the passage duct of the sprue bush is cylindrically formed from the feed opening on the upstream of the opening into the cavity, then it has a constriction, and finally a conical widening is formed which opens into the cavity; and the sprue bush has an electrical heater over almost the entire length of the cylindrical duct formation and a cooling zone in the region of the constriction.
Patent TW-360904-B (TW)
Title: Adhesive tape, base material for adhesive tape and their manufacturing method
Inventor: NAGAMOTO KOUICHI
IPC: B24B37/30
Filed: 1997-03-13
Granted: 1999-06-11
Abstract: A base material has a radiation-cured material prepared by curing a mixture of urethane acrylate oligomer and reactive dilute monomer, and also it shows a breaking elongation of more than 10%, preferably of more than 100%. The base material is used as a base sheet of an adhesive tape where an adhesive layer is formed on the base sheet. Accordingly, the novel base material and its manufacturing method in addition to an adhesive tape having such base material are provided. Furthermore, the adhesive tape has a flat surface without any fish-eye that causes the troubles of cracking, chip-scatting, and so on in the steps of back-grinding and dicing of the semiconductor wafer, and also the adhesive tape can be processed so as to have a predetermined thickness with high accuracy, compared with that of the conventional one.
Patent TW-341677-B (TW)
Title: Fail-safe device for a data processing system and method thereof
Inventor: SHIEH YEONG-FANG
IPC: G06F13/14
Filed: 1996-10-15
Granted: 1998-10-01
Abstract: A fail-safe device for a data processing system, which comprises: a data reading device for reading data stored in a replaceable storage media; a storage device for storing data; an operation device for carrying out data processing; and a determining device; in which, corresponding to a replaceable storage media to be used in the data processing system, the data reading device corresponds to the control of a positioning device and reads the data on a specific zone on the replaceable storage media, and transmits the data to the operation device; the operation device operates on the data of the specific zone according to a specific computation algorithm to obtain a to-be-compared computed value corresponding to the replaceable storage media, and transmits the value to the determining device; the determining device determines whether the to-be-compared computed value meets a fail-safe criteria, and selectively controls the data processing system to be working in one of a first working mode and a second working mode corresponding to the determined result of the determining device.
Patent TW-463415-B (TW)
Title: Receiving apparatus
Inventor: KONISHI TAKAAKI
IPC: H01P1/203
Filed: 1997-03-28
Granted: 2001-11-11
Abstract: A receiving apparatus is presented, in which a channel frequency can be selected over a wide band with an increased attenuation at an image frequency and/or at a local oscillation frequency by including a tunable filter having a following construction. Microstrip lines are connected between either one of the input or the output terminal or both of the input and output terminals of the tunable filter; a plurality of resonant circuits are formed by each of a plurality of coils and a plurality of variable capacitance diodes; and the coils are electromagnetically coupled and where a voltage applied to each cathode of each of a plurality of variable capacitance diodes through each of a plurality of resistors is controlled to tune a frequency to be received.
Patent TW-349904-B (TW)
Title: Improved open cell mesh and washing implement manufactured therefrom
Inventor: GIRARDOT RICHARD MICHAEL
IPC: B29D28/00
Filed: 1997-04-23
Granted: 1999-01-11
Abstract: A sort of open cell mesh, having: a plurality of holes defined by filament sections and series of knots, including the knots filament sections and crossing points, being the knots of the mesh varying between 70 and 125, preferably between 90 and 110, and the TAG factor of the open mesh of 520m/g to 1800M/g.
Patent TW-384539-B (TW)
Title: Semiconductor memory device having copy dsta protect function and method for accessing the same
Inventor: TATSUMI YUUICHI
IPC: G06F21/72
Filed: 1997-05-21
Granted: 2000-03-11
Abstract: Cryptographic key data and data subjected to an operation by use of the cryptographic key data are previously stored in a memory cell array. A memory cell in which the cryptographic key data is stored is accessed and latched and the cryptographic key data is latched in a latch circuit before read out data from the memory cell array. After this, the latched data and data output from a sense amplifier are subjected to an operation by an arithmetical circuit to encode decode the data and the result of the operation is output as readout data.
Patent TW-340974-B (TW)
Title: Semicondcutor and the manufacturing method
Inventor: FUJII TAKEO
IPC: H01L21/8234
Filed: 1997-08-08
Granted: 1998-09-21
Abstract: A sort of semicondcutor, having a first conductive MISFET group and a second conductive MISFET group, formed on a semiconductor substrate, having the first MISFET group on each of the gate electrodes a lateral insulation layer and the second MISFET group on any of the gate electrodes having no lateral insulation layer.
Patent TW-428266-B (TW)
Title: Variable capacitor and its manufacturing method
Inventor: LIN YING-SHI
IPC: H01L21/70
Filed: 1997-11-06
Granted: 2001-04-01
Abstract: The present invention provides a variable capacitor which comprises a first electrode, a second electrode, and a variable length device connected between the first and the second electrodes. A power input is used to adjust the dielectric thickness between electrodes to change the capacitance. The present invention also provides a method for forming a variable capacitor, which comprises: sequentially forming a first electrode, a first dielectric layer, a first sacrificial layer, and a second dielectric layer; forming a pair of contact channels on the second sacrificial layer for communicating to the first sacrificial layer; forming a second sacrificial layer in the contact channels; forming a second conductive layer; forming a third sacrificial layer, a second electrode, and resistor pattern from the second conductive layer; forming a passivation layer; and removing the third, the second, and the first sacrificial layers to form a dielectric space between the first dielectric layer and the second dielectric layer.
Patent TW-388947-B (TW)
Title: Wafer map analysis auxiliary system and wafer map analysis method
Inventor: OZAKI KOUJI
IPC: H01L21/02
Filed: 1997-12-09
Granted: 2000-05-01
Abstract: A wafer map analysis auxiliary system comprises an observation means which applies a linker which shows relation with semiconductor manufacturing process to map data, an input means for input of numerical value data related to a wafer map, a storage means for storing map data provided with data and linker regarding semiconductor manufacturing process and numerical value data and an image display means which displays an image related with data regarding semiconductor manufacturing process and numerical value data, and also displays an image of a wafer map described in map data in a screen by unloading map data from the storage means and classifying it according to a linker.
Patent TW-365684-B (TW)
Title: Method of improving SOG reliability in surface passivation by means of isolating outer ring-band
Inventor: JAN BIN-YI
IPC: H01L21/02
Filed: 1998-03-05
Granted: 1999-08-01
Abstract: Method of improving SOG (spin-on glass) reliability in surface passivation of circuit component by means of isolating outer ring-band, includes formation of an isolating outer ring-band by means of CVD (chemical vapor deposition) and etching on the die seal on the substrate with implemented circuit pattern and by means of the narrow width of the isolating outer ring-band and the flow distribution of the SOG spin-coating in order to reduce the thickness of SOG on top of the isolating outer ring-band or down to 0 so as to lower damage on exposed SOG on die seal in the subsequent photoresist-removing process, which results in the lift-off of circuit component surface passivation, meanwhile enhancing yield rate and reliability of the finished product.
Patent TW-380239-B (TW)
Title: Stacks renaming method and apparatus in data processor using the superscalar stacks as the base
Inventor: SHANG SHI-SHENG
IPC: G06F9/40
Filed: 1998-04-28
Granted: 2000-01-21
Abstract: The invention relates to the method and system apparatus for stack records renaming in order to discover the instruction parallel of superscalar processor. The first embodiment employs parallel structure of stack renaming and renames the instruction in parallel. The second embodiment employs sequential structure for stacks renaming and renames the instruction in sequence. The third application employs combined parallel-sequential structure for stack renaming that is partly in parallel and partly sequentially for renaming the instruction.
Patent TW-397743-B (TW)
Title: Shock-absorbing claw hammer
Inventor: GIERER JOSEPH T
IPC: B25D1/12
Filed: 1998-07-09
Granted: 2000-07-11
Abstract: A shock-absorbing claw hammer includes a handle, a claw and a striking head. Vibrations and shock in the handle and head, as well as recoil, caused by the striking head striking an object are at least partially reduced by shock-absorbing means.
Patent TW-451122-B (TW)
Title: Semiconductor device with plural power supply circuits, plural internal circuits, and single external terminal
Inventor: KANEKO MASAKI
IPC: G11C16/06
Filed: 1998-08-21
Granted: 2001-08-21
Abstract: A semiconductor device has a plurality of power supply circuits whose generated voltages are different from each other, and a plurality of internal circuits whose operating voltages are different from each other. The power supply circuits and the internal circuits are interconnected by plural power lines with plural power supply switches respectively. The power lines are connected to an external signal terminal by plural control circuits with external switches respectively. The power supply circuits and the internal circuits can be tested from the external signal terminal.
Patent TW-385238-B (TW)
Title: Manufacturing method of lotus seed bead and the product thereof
Inventor: LIN SEN-JIN
IPC: A44C23/00
Filed: 1998-09-09
Granted: 2000-03-21
Abstract: The invention relates to a kind of manufacturing method for lotus seed bead in which the lotus seed with covered shell is applied dehydration process; then, employing a tool to drill a penetrated hole on the lotus seed; immersing the drilled lotus seed in the oil for a period of time; then, the lotus seeds are taken out for stringing as a series so as to get the product.
Patent TW-387148-B (TW)
Title: Memory cell for dynamic random access memory (DRAM)
Inventor: SCHELLER GERD
IPC: H01L27/108
Filed: 1998-10-01
Granted: 2000-04-11
Abstract: A memory cell, which includes a transistor and a capacitor, for use in a DRAM uses a silicon-filled vertical trench as the capacitor and a vertical transistor superposed over the vertical trench in a silicon chip. An epitaxial layer is formed at the top of the fill in the trench to impart seed information to the primarily polysilicon silicon fill in the trench. A polysilicon layer is deposited over the top surface of the chip, is apertured over the top of the trench, and has its sidewalls oxidized. The opening is then refilled with epitaxial silicon in which there is created in operation an inversion layer that serves as the channel of the transistor, and the deposited polysilicon layer serves as the word line. Another silicon layer is deposited over the epitaxial layer to serve as the bit line. The source/drain regions of the transistor are formed at the merger of the deposited layer with the fill in the trench and the merger with the polysilicon layer that serves as the bit line.
Patent TW-404149-B (TW)
Title: Production method for wiring board
Inventor: YOSHIMURA EIJI
IPC: H05K3/00
Filed: 1998-12-03
Granted: 2000-09-01
Abstract: A production method for a wiring board of the present invention includes a resin filling method comprising the steps of, setting a peelable sheet having holes on at least one side of the wiring board or base layer each having through holes for filling the resin, so as to adjust the location of the holes to the corresponding through holes, setting resin sheet on the side set with the peelable sheet, the resin sheet being capable of fusing by heat and solidifying by cooling or curing , heating and pressing the reisn sheet to insert the part thereof while fusing it, solidifying the resin by cooling or curing, and peeling the peelable sheet from the wiring board or base layer. This invention provides the production method for wiring board including the resin filling steps, in which the filled resin has few deficiency, materials are cheap and the steps are not complicated for filling the resin to the through holes.
Patent TW-436319-B (TW)
Title: Method of removing catalyst from a reaction mixture containing one or more dibasic acids and reactor device for conducting an oxidation of a hydrocarbon to a dibasic acid
Inventor: VASSILIOU EUSTATHIOS
IPC: C08G63/90
Filed: 1998-12-07
Granted: 2001-05-28
Abstract: A method of removing catalyst from a reaction mixture containing one or more dibasic acids, the reaction mixture having been formed after reaction of a hydrocarbon with an oxidant in the presence of the catalyst, water, and a monobasic acid solvent, in an oxidation zone, the method being characterized by steps of: (a) precipitating part of the catalyst in a first catalyst precipitation zone by removing water at least partially from the reaction mixture and/or controlling temperature to be adequately high for causing partial catalyst precipitation; (b) removing the precipitated catalyst, thus forming a second mother liquor comprising dissolved catalyst, monobasic acid solvent, and one or more of dibasic acids; (c) removing at least partially the monobasic acid solvent and melting the one or more dibasic acids until catalyst precipitates in a second catalyst precipitation zone; and (d) removing the catalyst which precipitated in step (c). A reactor device for conducting an oxidation of a hydrocarbon to a dibasic acid in the presence of a catalyst and a monobasic acid solvent, in a reaction mixture, followed by a two-stage separation of the catalyst from the reaction mixture, the reactor device characterized by: an oxidation chamber; a first catalyst precipitation assembly connected to the reaction chamber, the first catalyst precipitation assembly comprising at least one of a de-watering station, and a first thermal treatment station; and a second catalyst precipitation assembly connected to the first catalyst precipitation assembly, the second catalyst precipitation assembly comprising an evaporator and a second thermal treatment station.
Patent TW-428064-B (TW)
Title: Base isolation device
Inventor: MATSUKAWA HIROKAZU
IPC: E04H9/02
Filed: 1998-12-21
Granted: 2001-04-01
Abstract: It efficiently displays a base isolation function even when an upper structure is light as a private housing, etc.. In addition, it miniaturizes and lightens in simple structure for a base isolation device devised to restrain swinging of an upper part structure against an earthquake. It is furnished with an upper plate 1 connected to an upper part structure. A lower plate 2 is set against a lower side of the upper plate 1 and is connected to a foundation. A support pillar 5 is fixed as to extend in the vertical direction on a lower surface except for an outer peripheral part of the upper plate 1. And a sliding member 6 is provided on a lower end part of this support pillar 5 free to slide the aforementioned upper plate 1 with the support pillar 5 against the lower plate 2 relatively in the horizontal direction. Then, the outer peripheral part overall peripheries of the upper plate 1 and the lower plate 2 are elastically connected to each other by a cylindrical rubber member 8 which extends when the upper plate 1 slides relatively in the horizontal direction against the lower plate 2 are elastically connected to each other.
Patent TW-434954-B (TW)
Title: Method for terminating conductors
Inventor: HUANG WAYNE
IPC: H01R4/24
Filed: 1998-12-31
Granted: 2001-05-16
Abstract: A method for terminating conductors of conductive wires to insulation displacement sections of a housing of a connector comprises the following steps. Step (a) providing a carrier having retaining means. Step (b) assembling the conductive wires to the retaining means such that the conductive wires are securely retained therein. Step (c) attaching the carrier to the housing whereby insulative layers of the conductive wires abut against the insulation displacement sections. Step (d) depressing the carrier toward the housing whereby the conductors are terminated with the insulation displacement sections.
Patent TW-402762-B (TW)
Title: Manufacturing a semiconductor device
Inventor: HA DAE-WON
IPC: H01L21/265
Filed: 1999-02-06
Granted: 2000-08-21
Abstract: The disclosed method for manufacturing a semiconductor device is provided to reduce the junction leakage current. Form an isolation device on a semiconductor substrate to define an active area and inactive area. Then implant a dopant into the active area to form at least a dopant implantation area.  Form a gate electrode above the active area then with a gate dielectric between them. A rapid thermal process is proceeded on the said semiconductor substrate to eliminate stress and the defects formed in the said isolation process and the dopant implantation process. This invention is characterized in proceeding the rapid thermal process after the gate electrode is formed, which could repair the damaged gate dielectric under the gate electrode, eliminate the stress and defects on said substrate, and inhibit the production of junction defect. Thus the quality of gate dielectric is improved and the junction leakage current is reduced.
Patent TW-419872-B (TW)
Title: Nitride semiconductor laser device
Inventor: ITO KUNIO
IPC: H01S5/10
Filed: 1999-04-06
Granted: 2001-01-21
Abstract: The objective of the present invention is to provide a nitride semiconductor laser device with a long operational life and a high reliability. The protective layer installed on the facet of the laser end of the nitride semiconductor laser diode is made of Al1-x-y-zGaxInyBzN (0<=x, y, z<=1, and 0<=x+y+z<=1) which is transparent to the light oscillated by the nitride laser diode.
Patent TW-445515-B (TW)
Title: Physical vapor phase deposition device capable of producing a thin film with uniform thickness on the surface of a semiconductor chip
Inventor: CHEN HSUEH-CHUNG
IPC: H01L21/203
Filed: 1999-04-16
Granted: 2001-07-11
Abstract: The present invention provides a physical vapor phase deposition device capable of producing a thin film with uniform thickness on the surface of a semiconductor chip. The device comprises a vacuum chamber which can be vacuumed and filled with Ar gas to produce Ar ions; a chip pad formed in the vacuum chamber for carrying a round semiconductor chip; a round metal target formed in the vacuum chamber and located above the semiconductor chip; a ring coil formed in the vacuum chamber and located between the metal target and the semiconductor chip, the ring coil having the same material as the metal target; and a voltage controller for controlling the voltages of the metal target, the chip pad, and the ring coil. When performing a physical vapor deposition, the voltage controller respectively generates a preset voltage difference between the metal target and the chip pad, and between the coil and the chip pad. Therefore, the Ar ions in the vacuum chamber can bombard the metal target and the ring coil, respectively, to release metal atoms, so as to uniformly sputter on the center and edge of the semiconductor chip and thus produce a thin film with uniform thickness on the surface of the semiconductor chip.