baber/WOPTO huggingface dataset:
Patent JP-H06248140-A (JP)
Title: Heat-resistant thermoplastic resin composition
Inventor: TATSUTA ATSUO
IPC: C08L55/02
Filed: 1993-02-24
Abstract: PURPOSE:To obtain the subject composition excellent in heat decomposition resistance, impact resistance and processability by adding a specified compound to a composition comprising a plurality of specified copolymers. CONSTITUTION:1-5 pts.wt. compound of the formula (wherein R<1> is H or CH3; R<2> and R<3> are each 1-9 C alkyl; and R<4> is R<1>) is added to 100 pts.wt. composition comprising 10-60wt.% graft copolymer prepared by polymerizing 70-20wt.% monomer mixture comprising 20-80wt.% aromatic vinyl compound (e.g. styrene), 0-35wt.% acrylonitrile and 0-25wt.% other vinyl compounds copolymerizable therewith in the presence of 30-80wt.% rubbery polymer (e.g. polybutadiene) and 90-40wt.% copolymer comprising 40-80wt.% alpha-methylstyrene, 10-35wt.% acrylonitrile and 0-35wt.% other vinyl compounds copolymerizable therewith.
Patent JP-H06247809-A (JP)
Title: Antifungal treatment of 'tatami' and 'tatami' facing
Inventor: MIYAKE IKUKO
IPC: A01N47/18
Filed: 1993-02-24
Abstract: PURPOSE:To effectively conduct antifungal treatment of tatami mat in high safety using a combination of an imidazole-based compound with dehydroacetic acid. CONSTITUTION:This method for antibacterial treatment of tatami mat and tatami facings is characterized by a treatment using an antifungal agent comprising an imidazole-based compound and dehydroacetic acid.
Patent JP-H11328330-A (JP)
Title: Noncontact card communication system
Inventor: TANAKA SATOSHI
IPC: H04L7/00
Filed: 1999-03-09
Abstract: PROBLEM TO BE SOLVED: To realize frame synchronism in a short time and to hardly decide erroneously even when transmission and reception are performed simultaneously by using a unique word which can be discriminated from other commands in one frame as a pattern for synchronizing frames and sending a signal through an incoming line while the unique word is sent through an outgoing line. SOLUTION: Control command information consists of a four-bit command and 8 bits of a bit-inverted command. Thus, such a redundancy is provided to precisely perform error detection. Then a frame synchronizing signal is connected which consists of a seven-bit '0' signal and a one-bit '1' signal. Data information also consists of four-bit data and eight bits of bit-inverted data similarly to the control command information. A frame synchronizing signal consisting of a seven-bit '1' signal and a one-bit '0' signal is followed. A discrimination between the command and data can be recognized by discriminating the two kinds of frame synchronizing signals.
Patent JP-H01235105-A (JP)
Title: Bushing
Inventor: YANO KAZUHIRO
IPC: H01B17/26
Filed: 1988-03-15
Abstract: PURPOSE:To damp or absorb noise, surges or the like by burying a circular magnetic substance penetrated by conductors in an insulator. CONSTITUTION:A pair of bar-shaped electric conductors (pair terminals) 1 arranged in parallel and a circular fixing flange 11 penetrated by they are integrally molded and formed with an electric insulator 13 made of resin or the like. A circular magnetic substance 13 penetrated by the conductors 1 is buried in the insulator 12. When noise or surges or the like are applied on a signal line and the reciprocating signal currents flowing in the conductors (pair terminals) 1 become unbalanced, the unbalanced quantity of current is damped because its energy is converted into the magnetic flux passing the circular magnetic substance 13 and is also absorbed by the stray capacity existing between the conductors 1 and the magnetic substance 13. Noise or surges or the like can be thereby damped or absorbed without providing a special noise filter.
Patent JP-S55153329-A (JP)
Title: Manufacture of semiconductor device
Inventor: ONO TOSHIHIKO
IPC: H01L21/027
Filed: 1979-05-18
Abstract: PURPOSE:To obtain a platinum silicide layer having an appointed pattern in a semiconductor with high reliability by a method wherein after a polycrystalline Si layer is removed selectively by the plasma etching method using a metal layer and a platinum layer as masks, the platinum layer, the polycrystalline layer, etc., are made to react by a heat treatment. CONSTITUTION:A polycrystalline Si layer 5 and a platinum layer 6 are prepared on the surface of a semiconductor substrate 1, a Ti-W layer 7 is formed on it by the spattering method, an Al layer 8 is formed on it by the evaporation method and the parts of layer 7, 8 at an opening part 10 are removed using a photoresist film 9 as a mask. Then the film 9 is removed, the part of layer 6 at the opening part 10 is removed using the layer 8, 7 as masks and an appearing part of layer 5 at the opening part 10 is removed by the plasma etching method using the layers 8, 7, 6 as masks. Then by performing the heat treatment, a platinum silicide layer 11 is formed by the reaction with the layers 6, 5 or the substrate 1. By this way, the platinum silicide layer having an appointed pattern can be formed even if there exists the polycrystalline Si layer.
Patent JP-H04296125-A (JP)
Title: Telephone set
Inventor: SENDAI YOSHIIKU
IPC: H04W84/10
Filed: 1991-03-26
Abstract: PURPOSE:To allow each handset to be connected to each separate external trunk line and to be connected to the same external trunk line by providing plural wireless handsets to one telephone set main body. CONSTITUTION:The telephone set main body is provided with a dial button 5, a communication means corresponding to each of handsets 6-9 and implementing mutual radio communication with each handset, a 1st changeover means 25 selecting automatically the connection with the external trunk line and the communication means, a 2nd changeover means 27 implementing the connection changeover between the trunk lines, and a dial signal transmission means 26 sending a dial signal to the trunk line to which the handset is connected by a prescribed signal from the handset and the handsets 6-9 are provided with hook buttons 6a-9a.
Patent JP-H05231593-A (JP)
Title: Condensation discharge device
Inventor: YUMOTO HIDEAKI
IPC: F16T1/22
Filed: 1992-02-14
Abstract: PURPOSE:To provide a condensation discharge device which can discharge only condensation irrespective of pressure on the primary and secondary sides. CONSTITUTION:In the condensation discharge device in which a float 21 is arranged in a condensation collection chamber 3 which has a flow-in port 4 and a return port 5 for condensation and an introduction port 8 and a circulation port 9 for fluid operated under high pressure, an air suction valve 10 which opens or closes the introduction port 8 and an air exhaust valve 11 which opens or closes the circulation port 9 are connected to the float 21, and check valves 6, 7 are arranged at the flow-in port 4 and return port 5, the return port 5 is closed when the condensation collection chamber 3 is at the predetermined low water level, and a valve means 20 which opens the return port 5 due to rise of water level is connected to the float 21.
Patent JP-H06246521-A (JP)
Title: Machining tool coated with cubic boron nitride film
Inventor: MURAKAWA MASAO
IPC: C23C14/06
Filed: 1993-02-26
Abstract: PURPOSE:To improve machining efficiency of cutting and so forth and abrasion resistance by forming a film by means of an ion plating method while equalizing the electric field strength of a tool surrounding which is generated when bias is applied to the tool to which a cubic boron nitride film is formed on its surface. CONSTITUTION:In a machining tool, for example, a drill, cubic baron nitride films (f) are applied uniformly respectively to edges such as a main cutting blade (d) and its outest end (margin shoulder part) (e) as well as respective surfaces such as a groove (a), a cutting face (b), a major flank (c) and so on. In the cubic boron nitride film (f), there is formed a cubic baron nitride layer f2 through an inclined composition layer f1 of boron and nitrogen, for example, on the upper surface of a middle layer (j) which consists of a hard film such as Ti disposed on the upper surface of a tool mother surface (g). The cubic boron nitride film (f) is formed by an ion plating method while equalizing electric field strength of the tool surrounding which is generated when bias is applied, to the tool. It is thus possible to attain a machining tool coated with a film uniformly.
Patent JP-2000258149-A (JP)
Title: Fairing method for measurement point sequence
Inventor: KADOWAKI SOICHI
IPC: G01B21/20
Filed: 1999-03-09
Abstract: PROBLEM TO BE SOLVED: To appropriately eliminate surface coarseness and to provide a precise, stable and highly accurate measured result even in the case of obtaining a fine measurement point sequence. SOLUTION: In a processor 10 for executing this method, a fairing processing part 14 obtains a temporary partial curve based on the measurement point sequence obtained from a sensor 12, enlarges or reduces the range of a measurement point group including the measurement point sequence based on the comparison of distances between the obtained temporary partial curve and respective measurement points and an allowable error, establishes a partial curve capable of performing approximation based on the measurement points as many as possible within the allowable error and performs a fairing processing for eliminating only dispersion based on the surface coarseness or the like. Then, the partial curves based on the original contour shape of an object are successively obtained and an accurate contour shape is recognized.
Patent JP-H03261787-A (JP)
Title: Spiropyran-based compound
Inventor: KITAO TEIJIRO
IPC: C07D491/107
Filed: 1990-03-13
Abstract: NEW MATERIAL:A compound expressed by formula I (R<1> and R<2> are 1-7C alkyl; X is -CH2- or carbonyl; rings A and B are hydrocarbon-based substitutive aromatic ring or substitutive heterocyclic aromatic ring; m<1> and n<1> are 1-7). EXAMPLE:A compound expressed by formula II. USE:A material for sensors, recording, memorizing and dimming materials, optical filters, masking and temperature indicating materials, having photochromism and assuming a color by metal ions. PREPARATION:A compound expressed by formula III is initially reacted with a compound expressed by formula IV in a solvent such as acetonitrile while being refluxed and the resultant product is then treated with a base such as NaOH under conditions of ambient temperature to afford a compound expressed by formula V. The obtained compound expressed by formula V is subsequently reacted with a compound expressed by formula VI in a solvent such as ethanol while being refluxed.
Patent JP-S52144517-A (JP)
Title: Exhausted gas cleaning device in gasolin internal combustion engine
Inventor: MATSUSHITA TOSHIAKI
IPC: F01N3/10
Filed: 1976-05-27
Abstract: PURPOSE: To reduce concentration of harmful three components with simple structure, by providing reaction chamber which has structure and volume to enable stay and mixing of exhausted gas in cylinder head and a hindrance that rotates or goes round exhausted gas stream is arranged. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-H04296049-A (JP)
Title: Semiconductor device
Inventor: USHIO TOMOHIRO
IPC: H01L23/50
Filed: 1991-03-26
Abstract: PURPOSE:To prevent effectively the generation of a short-circuit at the time of soldering of lead terminals to a circuit pattern without reducing the strength of the lead terminals by a method wherein an external force is never applied directly to the twist parts of the lead terminals and the short-circuit at the time of soldering of the lead terminals to the circuit pattern is hardly generated. CONSTITUTION:A semiconductor device is provided with a package 1 for housing a semiconductor element and flat plate-shaped lead terminals 2, which are connected to the element and are led out to the outside of the package 1. The lead terminals 2 are formed in such a way that the main planes 2a of the terminals, which are led out from the package 1 to the outside, 2 are extended in the direction almost perpendicular to the mounting surface of the package 1.
Patent JP-S53147027-A (JP)
Title: Preparation of glutathione
Inventor: ARIYOSHI YASUO
IPC: C07D277/10
Filed: 1977-05-27
Abstract: PURPOSE: To prepare reduced-type glutathione in high yield and efficiency by simple procedures, by the condensation reaction of N-formyl-L-α-amino-ϒ-cyanobutyric acid ethyl ester with L-cysteinylglycine ethyl ester. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-2000254716-A (JP)
Title: Method of cooling work roll for hot-rolling
Inventor: IMAGAWA KAZUNORI
IPC: B21B27/10
Filed: 1999-03-09
Abstract: PROBLEM TO BE SOLVED: To shorten the idle time of a finish-rolling without developing the roughening of the roll surface and to improve the productivity by jetting cooling liquid for cooling the outlet side of work-roll after forcibly cooling with a cooling device. SOLUTION: The heat input is developed with a contacting heat transfer qm between the work roll 2 and a rolling material 3, and heat inputs qf, qp with a friction heat generation and a working heat generation and the heat output is developed with heat outputs qw, qa of a water-cooling and an air-cooling. When the transition of temp. of the work roll 2 is simultated, the surface temp. and the peak temp. near the surface at each rotation of the work roll 2 reach the saturated temp. already at tens of rotations since biting the rolling material 3 and further, the peak temp. near the surface becomes the constant value with the few pieces of the rollings after starting the cycle. In this way, since the rolling material 3 is brought into contact with the work roll 2 and the roll surface violently developing the heat input and the heat output is the outlet side 4 of the work roll, at where the rolling material 3 is passed through the work roll 2, the cooling is executed by controlling the water temp. at the jetting outlet to a prescribed temp. after passing through the forcibly cooling machine.
Patent JP-H10246118-A (JP)
Title: Start control device for air bypass valve
Inventor: SHIOURA YUICHIRO
IPC: F02B37/16
Filed: 1997-02-28
Abstract: PROBLEM TO BE SOLVED: To control opening/closing operations of an air bypass valve correctly by arranging first and second pressure sensor for detecting pressure of intake passages formed downstream and upstream from a throttle valve, and opening the air bypass valve when pressure detected by the second pressure sensor is changed to a setting value or more. SOLUTION: In a start control device 36, when control is started by a control means 48, a selecting valve 42 is turned off at the time of an accelerating and normal condition so as to close an atmosphere passage 40. A bypass passage 20 is closed in association with closing of the atmosphere passage 40 by an air bypass valve 22. In this case, pressure P1 , P2 detected by pressure sensors 44, 46 are monitored by a control means 48, it is judged by the control means 48 whether the pressure P2 is fluctuated to a setting value or more within a setting time or not. In the case of 'Yes', the selecting valve 42 is turned on since it is a decelerating time so as to open the atmosphere passage 40. As a result, the bypass passage 20 is opened since pressure acting on the diaphragm chamber 28 of the air bypass valve 22 becomes in a low level.
Patent JP-S59189185-A (JP)
Title: Stabilizer for hydrazine compound
Inventor: MOCHIZUKI FUJIAKI
IPC: C01B21/16
Filed: 1983-04-08
Abstract: PURPOSE:To provide the titled stabilizer comprising a surfactant, which prevents decomposition of hydrazine compd. and maintains the effect of water treatment. CONSTITUTION:A nonionic, cationic, anionic or amphoteric surfactant is added to a hydrazine compd. (e.g. monomethylhydrazine) used as deoxidant in a closed system such as boiler and as slime controlling agent in an open system such as cooling water and water for paper manufacture. For prevention of decomposition in prepared chemicals, the surfactant is used in an amount of 0.01-50wt% of hydrazine and for prevention of decomposition of object, it is used in a concentration of 0.1-100mg/l. EFFECT:Consumption of the hydrazine compd. is reduced and concentration of addition is lowered, leading to a decrease in the corrosive action upon copper materials, etc. Effects of slime control, scale prevention and rust prevention are improved.
Patent JP-S61223147-A (JP)
Title: High strength and highly conductive copper base alloy
Inventor: SHIMADA TAKASHI
IPC: C22C9/02
Filed: 1985-03-28
Abstract: PURPOSE:To obtain copper base alloy having good conductivity and furthermore superior strength and spring property, by suppressing Ti content to min. limit, and adding Sn and Ni to ppt. intermetallic compd. CONSTITUTION:The titled alloy is composed of, by weight, 1.0-3.0% Ti, 1.0-5.0% Sn, 0.01-1.0% Ni and or Co and the balance Cu. By adding furthermore 0.01-1.0% of >=one kind among Al, In, Te as auxiliary component instead of a part of copper in the alloy, resistances for creep and corrosion are improved. The alloy has conductivity almost comparable with berrylium copper alloy or more, further exhibits superior strength, spring property, creep resistance, plating adhesive property, brazing property and corrosion resistance. Consequently, the alloy has superior feature as high class precise spring material substituting expensive berrylium copper alloy including poisonous problem.
Patent JP-S58179317-A (JP)
Title: Vortex flow meter
Inventor: NISHIHARA TADASHI
IPC: G01F1/32
Filed: 1982-04-14
Abstract: PURPOSE:To reduce a noise caused by disturbance force, to improve an S/N ratio, and also to make vibration resistance satisfactory, in a flow speed and flow rate measuring device for measuring a flow speed or a flow rate by detecting the variation frequency of pressure working on an object by a Karman's vortex, and fetching it as a vortex signal. CONSTITUTION:When a measuring fluid flows to a duct, a Karman's vortex is generated by a force receiving body 2. When this Karman's vortex is generated, a pressure difference is generated on the side of the force receiving body 2. Seal diaphragms 32, 33 are displaced by this pressure difference, and a gap between the seal diaphragms 32, 33 and a fixed capacity electrode 311 is varied. Vortex generation frequency can be detected by detecting the number of times of this variation as an electrostatic capacity variation. On the other hand, as for a disturbance signal caused by vibration of the duct, force F30 working on a measuring diaphragm 30 becomes like F30=(M-rhoHAe)alpha (provided that M: mass of a center plate 301, H: height of charged waves 36, 37, rho: density of the charged waves 36, 37, Ae: an effective area of the measuring diaphragm 30, alpha: acceleration of disturbance caused by vibration f the duct). When the mass M of the center plate 301 is set so as to be M=rhoHAe in advance, force generated by the disturbance acceleration alpha always becomes zero, and no error is generated by the disturbance accleration alpha.
Patent JP-S62217551-A (JP)
Title: Discharge lamp
Inventor: NAKAMURA NAOYUKI
IPC: H01J61/32
Filed: 1986-03-19
Abstract: PURPOSE:To perform stable starting with low lamp voltage by constituting a pair or plural pairs of discharge lamps so that a ratio of an opening area of a coupling part connecting through said discharge lamps at their end parts to a sectional area of the discharge lamp may be above 0.04. CONSTITUTION:Electrodes are fixed respectively to a stem part sealed to one end of the glass-made discharge tubes 1 and 2 having an outer diameter of 20mm and an inner diameter 18mm each. Both are connected through at a coupling part 3 near the tip parts of the discharge tubes 1 and 2 while a discharge path is formed between the electrodes of the discharge tubes 1 and 2 through a connecting hole by said coupling part 3 while the coupling part 3 has a circular connection hole. The base 4 made of heat-resisting synthetic resin are fixed to the stem side end parts of the discharge tubes 1 and 2 by using an adhesive or so. When the hole diameter is more than 3.6mm, that is to say when the ratio of the hole opening area to the discharge tube sectional area is above 0.04, lamp voltage becomes less than 108V, which is the lighting limit voltage when using 100V business power supply, thus ensuring lighting with 100V business power supply.
Patent JP-H07269783-A (JP)
Title: Support part construction in passage for exhaust gas
Inventor: YAMAMOTO SHOZO
IPC: F16L59/12
Filed: 1994-03-31
Abstract: PURPOSE:To suppress reduction of the temperature of a support part and prevent corrosion on the support part. CONSTITUTION:When exhaust gas 2 is passes a passage 10 for exhaust gas, heat from a wall body 5 whose temperature rises to a high level by passing of exhaust gas 2 is transferred to a support plate 7 by good heat conductivity of a heat pipe 1. This heat exceeds the heat radiated from the support plate 7 to a frame 6, so that the support plate 7 is heated, and as a result, reduction of a temperature on the supporting plate 7 installing part of the wall body 5 is suppressed.
Patent JP-H03261744-A (JP)
Title: 1,3-pentadiene derivative and production thereof
Inventor: TAJIMA MASAHIKO
IPC: C07C69/21
Filed: 1990-03-12
Abstract: NEW MATERIAL:1,4,5,5-Tetra-acetoxy-1,3-pentadiene. USE:An intermediate for perfume and drug. PREPARATION:1,3-Pentadiene derivative shown by formula I is obtained by new reaction wherein D-glucofuranurono-6,3-lactone acetate shown by formula II is reacted in acetic anhydride in the presence of pyridine.
Patent JP-S57177569-A (JP)
Title: Junction type field effect semiconductor device
Inventor: UJIIE KAZUAKI
IPC: H01L27/098
Filed: 1981-04-27
Abstract: PURPOSE:To allow the on-off action of multisignals and the mixing or resultant of multisignals for the most appropriate state for contactless switches, etc., by providing a plurality of gate and drain regions in a integral body with a source region common. CONSTITUTION:An n<-> type layer 2 is epitaxial-grown on an n<+> type Si substrate 1 serving as a source region with an SiO2 film 3 selectively provided on the center thereof for the diffusion-formation of P<+> type gate regions 4 and 5 with the film as the mask. Next, the film 3 is removed with the epitaxial growth of the n<-> type layer 2 contacting a layer 2 again over the entire surface including the regions 4 and 5 for the diffusion-formation of n<+> type drain regions 6 and 7 corresponded to the regions 4 and 5. Thereafter, the clearance between the regions is filled to adhere an SiO2 film 8 over the entire surface for the formation of the first and second electrodes 9 and 10 which correspond to the regions 4 and 5, and the first and second drain electrodes 11 and 12 are provided corresponding to the regions 6 and 7. Thus, the first transistor 14 is constituted of the regions 4 and 6 and electrodes 9 and 11, and the second transistor 15 of the regions 5 and 7 and electrodes 10 and 12.
Patent JP-S62219197-A (JP)
Inventor: KATAOKA KOSAKU
IPC: D06F33/02
Filed: 1986-03-20
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H09260976-A (JP)
Title: Field effect transistor amplifier
Inventor: MOCHIZUKI TAKUSHI
IPC: H01P7/04
Filed: 1996-03-19
Abstract: PROBLEM TO BE SOLVED: To make the amplifier small regardless of improving the characteristic of the FET amplifier by realizing a low noise processing of the low noise amplifier employing a FET over a broad frequency band through a small sized low loss input circuit configuration. SOLUTION: An isolator 2, a 1/2 wavelength coaxial line 3, a lead inductor 7 are connected to an input of a FET 1 of the field effect transistor amplifier and an output matching circuit 4 is connected to the output side. The 1/2 wavelength coaxial line 3 has a characteristic impedance lower than the input impedance when viewing from an amplifier input terminal toward a FET input terminal and is made up of a coaxial dielectric resonator element having an electric length of 1/2 wavelength. The frequency locus providing an optimum noise characteristic and the spread in a frequency direction are almost in matching with each other to make low noise matching over a broad frequency band.