baber/WOPTO huggingface dataset:
Patent TW-461006-B (TW)
Title: Measuring device and method of valve spraying time
Inventor: LIOU SHIN-CHIUAN
IPC: H01L21/00
Filed: 2000-08-15
Granted: 2001-10-21
Abstract: The present invention provides a measuring device and method of valve spraying time. The measuring device includes: a fiber sensor formed around the nozzle; a first relay whose contact points are conducted when ON signal from an electromagnetic valve excites the coil of the first relay; a second relay whose contact points are conducted when the shielding signal from the fiber sensor excites the coil of the second relay; and a stop watch having a start terminal connected to the first relay, a stop terminal connected to the second relay. In the measuring method, when the electromagnetic valve sends a signal for opening the suckback valve to spray photoresist from the nozzle, an opening signal is also sent out to excite the coil of the first relay, and the contact points of the first relay are simultaneously conducted to start the stop watch. When the fiber sensor detects that the photoresist is sprayed out of the nozzle, a shielding signal is sent out to excite the coil of the second relay, and the contact points of the second relay are contacted to stop the stop watch, wherein the value read of the stop watch is the delay time between the suckback valve and the electromagnetic valve.
Patent TW-530378-B (TW)
Title: Process for the treatment of substrates for microelectronics and substrates obtained by this process
Inventor: BARGE THIERRY
IPC: H01L21/762
Filed: 2000-10-05
Granted: 2003-05-01
Abstract: The invention relates to a process for the treatment of substrates (1) for microelectronics or optoelectronics comprising a working layer (6) at least partially composed of an oxidizable material on at least one of their faces, this process comprising: a first sacrificial oxidation stage (100) for removing material constituting the working layer (6) over a certain surface thickness of each substrate (1), a stage of polishing (200) the face which has been subjected to the first sacrificial oxidation stage (100), and a second sacrificial oxidation stage (300) for again removing material constituting the working layer (6) on the polished face (17).
Patent TW-486366-B (TW)
Title: Container for brewing
Inventor: YU HUNG-JAU
IPC: A47J31/18
Filed: 2000-08-18
Granted: 2002-05-11
Abstract: A container for soaking comprises a body; a cover; and an automatic open device. The automatic open device has a cylinder installed in the body, in which the water outlet of the cylinder is connected to the outlet of the body. The water resistant section of the cylinder is installed with a plug for blocking the passage of the water outlet. A hole of the plug corresponding to the periphery of the water resistant section has a chip connecting to the interior of the cylinder. A mobile shaft in the cylinder and connected to the plug is housed with a float. The upper section of the shaft has a larger diameter for checking a protrusion of the float so that the float can be lifted up when water flows into the cylinder through the chip from the hole of the water resistant section in order to lift the shaft and enable the interior of the cylinder and the interior of the body to be in communication with the water outlet hole, thereby discharging water from the body through the water outlet.
Patent TW-I242434-B (TW)
Title: Pharmaceutical solutions of levosimendan
Inventor: BACKSTROM REIJO
IPC: A61K31/50
Filed: 2000-08-30
Granted: 2005-11-01
Abstract: The invention relates to levosimendan solutions for pharmaceutical use, and particularly for intravenous administration. The solutions of the invention have enhanced stability and they are particularly useful as infusion or injection solutions or infusion concentrates. Levosimendan is useful in the treatment of congestive heart failure.
Patent TW-486680-B (TW)
Title: Rare earth phospho-vanadate phosphors, display system and light emitting system
Inventor: SUZUKI TERUKI
IPC: G09F9/00
Filed: 2000-09-27
Granted: 2002-05-11
Abstract: Rare earth phospho-vanadate phosphors containing at least one element of group IV of the periodic table have spherical or cubic shaped particles and provide higher brightness and longer brightness life, and effective for use in display systems and light emitting systems.
Patent TW-517303-B (TW)
Title: Method for cleaning mono-crystal silicon-semiconductor wafer and for processing a semiconductor-component
Inventor: HOPFNER JOACHIM
IPC: H01L21/223
Filed: 2000-10-18
Granted: 2003-01-11
Abstract: In a cleaning-method of a mono-crystal silicon-semiconductor wafer (1) for removing platinum-contaminant or other meal-and/or rate-earth-metal substances, on a main surface is generated a getter-layer (15) by introducing pre-determined ions, in a temperature-processing step the undesired substances together with the introduced ions are removed on the crystal-dislocations under the formation of complexes, and in the next wet chemical etching step the getter-layer (15) is removed from the main surface.
Patent TW-469573-B (TW)
Title: SOI device
Inventor: WU TE-YUAN
IPC: H01L21/76
Filed: 2000-11-10
Granted: 2001-12-21
Abstract: The present invention provides an SOI device having a back gate layer manufactured on a SOI substrate. The SOI substrate includes a first insulation layer, first conductive back gate layer, a second insulation layer and a first conductive type silicon layer sequentially formed on a substrate. The SOI device includes a metal oxide semiconductor (MOS) transistor, and a first oxidization area and a second oxidization area respectively formed in the back gate layer right below the source and drain of the MOS transistor and adjacent to the lower portion of the second insulation layer. When applying a back gate bias to the back gate layer, the first oxidization area and the second oxidization layer can decrease the parasitic capacitance of the drain/source junction interface generated by the back gate bias, whereby the MOS transistor is provided with a characteristic of having both high threshold voltage and low junction leakage.
Patent TW-582026-B (TW)
Title: Cache method for data
Inventor: UEMURA TOYOTOSHI
IPC: G06F12/08
Filed: 2000-11-16
Granted: 2004-04-01
Abstract: When the data stored in a memory are requested to be read by a computer, each read-requested data is judged to see whether it is cache-hit with the data stored in the read-buffer, in the read-requested data only the data that are not cache-hit are read from said memory and are buffered in the read-buffer, said read-requested data are transferred from the read-buffer to the computer, the data, whose numbers are continuous to the read-requested data, are pre-read from said memory and are buffered in said read-buffer so that they are continuous to the read-data which have been buffered. In this way, the cache-data can be very efficiently used.
Patent TW-460881-B (TW)
Title: Method for forming inductance with one-piece core
Inventor: SHIU HAN-JENG
IPC: H01F41/00
Filed: 2000-11-30
Granted: 2001-10-21
Abstract: The present invention discloses a method for forming inductor with one-piece core for increasing the inductance and solving the acoustic noise problem in the prior art. The present invention comprises the steps of: (a) providing a pre-formed core seat; (b) forming a flat coil on the recessed slot of the core seat; (c) forming an one-piece core for covering the flat coil by using core powder to press and shape, wherein the step of forming an one-piece core further comprises: (d) filling the core powder into the recessed slot of the core seat; (e) pressing the core powder, and then performing a thermal processing step to the inductor to remove the adhesive thereby solidifying the core powder and releasing the stress caused by the process of pressing.
Patent TW-593693-B (TW)
Title: Magnesium-based casting alloys having improved elevated temperature performance
Inventor: PEKGULERYUZ MIHRIBAN OZDEN
IPC: C22C23/02
Filed: 2000-12-14
Granted: 2004-06-21
Abstract: A magnesium-based casting alloy having good salt-spray corrosion resistance and improved creep resistance, tensile yield strength and bolt-load retention, particularly at elevated temperatures of at least 150 DEG C, is provided. The inventive alloy comprises, in weight percent, 2 to 9% aluminum and 0.5 to 7% strontium, with the balance being magnesium except for impurities commonly found in magnesium alloys.
Patent TW-453936-B (TW)
Title: Torque control type impact wrench
Inventor: KAWARAI MASAKI
IPC: B25B21/02
Filed: 2001-01-18
Granted: 2001-09-11
Abstract: A torque control type impact wrench includes a torque producing section for generating a pulsed torque, a driving section for driving the torque producing section, a rotation shaft engaged to a screw for rotating and screwing a male screw into a female screw using the torque generated by the torque producing section, a first setting section for setting an ideal upper limit of the pulsed torque for screwing the male screw into the female screw, a second setting section for setting a driving speed of the driving part, a first storage section for storing the ideal upper limit of the torque set by the first setting section as a first storage value, a second storage section for storing a driving speed set by the second setting section as a second storage value, and a control section for causing the driving section to drive the torque producing section at the second storage value and stopping the driving section when the pulsed torque exceeds the first storage value, wherein the control section causes the second storage section to store a value, which is larger than the second storage value, as a new second storage value when the pulsed torque does not reach the first storage value within a given time period after the driving section starts.
Patent TW-495964-B (TW)
Title: Semiconductor integrated circuit device and its manufacturing method
Inventor: SUZUKI MASAYUKI
IPC: H01L21/768
Filed: 2001-02-14
Granted: 2002-07-21
Abstract: The present invention relates to semiconductor integrated circuit device and its manufacturing method. The solving means is described in the following. Bit lines BL of the DRAM, which are miniaturized to 0.1 μm or less, are made of two-layered conductive films, in which a W (tungsten) film is deposited on a WN (tungsten nitride) film. For bit lines BL, since fewer W atoms diffuse across the interface between the W film and the WN film or within crystal grains and at grain boundaries of the W film, no tensile stress exists in the W film. Therefore, even when the line width is narrowed to 0.1 μm or less, high temperature thermal processing in the capacitor manufacturing process does not cause wiring breaks.
Patent TW-505925-B (TW)
Title: Sense amplifier
Inventor: NAKAGAWA YUKIHARU
IPC: G11C29/50
Filed: 2001-03-21
Granted: 2002-10-11
Abstract: A sense amplifier includes a differential circuit comparing data in memory cells and reference data in reference cells. The sense amplifier is provided with a first reference cell corresponding to a predetermined value of the threshold of a memory cell, a second reference cell corresponding to the determination of the memory cell having a high level at the time of high temperature or low temperature and a third reference cell corresponding to the determination of the memory cell having a low level at the time of high temperature or low temperature. The sense amplifier can thereby detect at room temperature a memory cell which would be defective at high temperature or low temperature.
Patent TW-504928-B (TW)
Title: Compensation method for improving color purity and color temperature of plasma display panel by adjusting the intensity of input image signals
Inventor: GAU SHIU-BIN
IPC: G09G3/28
Filed: 2001-04-03
Granted: 2002-10-01
Abstract: The present invention provides a compensation method for improving the color purity and color temperature of plasma display panel (PDP) by adjusting the intensity of input image signals. The method utilizes laws of color matching to determine the color brightness generated by a three-color discharging unit corresponding to each pixel thereon via numerical operation. Furthermore, by increasing or decreasing the intensity of input image signal of each discharging unit, the generated red, green, or blue color brightness can just counteract the visible light generated by gas discharge in each discharging unit, thereby compensating the negative influence on the color purity and color temperature of plasma display panel caused by the visible light generated by gas discharge. Accordingly, the whole screen can present image with optimal color purity and color temperature, and the cost of improving the color purity and color temperature can be greatly reduced.
Patent TW-501244-B (TW)
Title: Integrated IC chip package for electronic image sensor die
Inventor: LAM KEN M
IPC: H01L31/0203
Filed: 2001-05-15
Granted: 2002-09-01
Abstract: An IC chip package for an image sensitive, integrated circuit semiconductor die incorporates all the components typically found in an imaging module of an electronic camera. The IC chip package consists of a plastic substrate base for holding an image sensor die and a separate, plastic upper cover for encapsulating the image sensor die and holding a filter glass, an optical lens, and providing an aperture for the optical lens. The upper cover has a lower shelf for holding the optical lens in alignment with the aperture opening over the image sensor die, and has an upper shelf for holding the filter glass over the optical lens. The lens is attached to the lower shelf using UV cure adhesive, and its focal distance to the image sensor die is determined by first electrically activating the image sensor die, adjusting the lens position to identify the optimal focus sharpness, and then applying UV light to activate the UV cure adhesive and hold the lens in focus.
Patent TW-I244348-B (TW)
Title: Device for permitting interaction between fixed and cellular telephone networks
Inventor: PELUSO STEFANO
IPC: H04M1/725
Filed: 2001-05-23
Granted: 2005-11-21
Abstract: Electronic system that by connecting a fixed telephone set (105) to a cellular phone (100) permits interaction between the cellular phone network and the fixed telephone (105) and also with the fixed telephone network (20).
Patent TW-I291070-B (TW)
Title: Active matrix liquid crystal display device
Inventor: SAKAMOTO MICHIAKI
IPC: G02F1/1362
Filed: 2001-05-30
Granted: 2007-12-11
Abstract: An active matrix liquid crystal display device which has color filters disposed on a TFT (thin-film transistor) substrate, and which reduces the effect of light leakage regions over data lines for an increased viewing angle. The liquid crystal display device has the data lines disposed on the TFT substrate at respective gaps between adjacent two of pixel electrodes, for supplying data signals to TFTs to drive pixel electrodes, and a black matrix disposed on the TFT substrate in association with the data lines for blocking light passing in a predetermined viewing angle range through a light leakage region created in the liquid crystal layer depending on a potential difference between adjacent two of the pixel electrodes.
Patent TW-513694-B (TW)
Title: Information recording medium, information recording method, information recording apparatus, information reproducing method, and information reproducing apparatus
Inventor: SASAKI MIYUKI
IPC: G11B27/32
Filed: 2001-05-31
Granted: 2002-12-11
Abstract: An information recording medium comprises a data recording area. A lead-in area and a volume space are allocated in the data recording area in advance. The volume space is constructed so as to allow a logical zone for recording at least a volume-file structure and an over-run protection area for preventing an access to an unrecorded area to be alternately allocated in the volume space. The lead-in area and the over-run protection area each include a chain volume management information area for storing chain volume management information. The chain volume management information includes address information of a subsequent logical zone and address information of a subsequent chain volume management information area.
Patent TW-521473-B (TW)
Title: Secondary structure of linear stepping motor and the manufacturing method thereof
Inventor: HSIAO SHUEN-SHING
IPC: H02K1/18
Filed: 2001-06-05
Granted: 2003-02-21
Abstract: The present invention provides an innovative secondary structure of linear stepping motor and the manufacturing method thereof. The innovative secondary structure of linear stepping motor comprises several pre-formed magnetic-conductive sheets and several insulating sheets arranged alternatively. The manufacturing method only needs to pre-form the magnetic-conductive sheets and the insulating sheets, and to assemble and glue the magnetic-conductive sheets and insulating sheets after formation, so that the present invention has the advantages of convenient fabrication, light weight, low eddy current, low cost, and easy quality control.
Patent TW-594715-B (TW)
Title: Optical information medium, method of manufacturing for the same, recording or reproducing method for the same and method of inspecting the same
Inventor: KOMAKI TSUYOSHI
IPC: G11B7/2542
Filed: 2001-06-26
Granted: 2004-06-21
Abstract: To improve the recording and reproducing characteristics in the case the beam spot diameter of a laser beam is small and a linear speed is high of an optical information recording medium which has an information recording layer on the surface of a supporting substrate and a light transmission layer of this information recording layer and is irradiated with the laser beam for recording or reproducing through the light transparent layer. This optical, information medium has the information recording layer on the supporting substrate and the light transmission layer on this information recording layer and is used to be made incident with a laser beam for recording or reproducing through this light transmission layer. The light transmission layer is composed of a resin and its tensile breaking strength is 5 to 40 MPa, its entire breaking elongation is 15 to 100% and the modulus of elasticity in tension is 40 to 1,000 MPa.
Patent TW-508519-B (TW)
Title: Network market registration device and method
Inventor: JIAN ALLEN
Filed: 2001-07-04
Granted: 2002-11-01
Abstract: There is provided a network market registration device, which includes a receiving module and a registration module, and is implemented in a network market system having a network shop database and a customer database. The receiving module receives the customer's basic data and customer's identification data transmitted from the customer via the Internet. The registration module stores the customer's basic data and customer's identification data into the customer database, thereby making the customer complete the registration procedure in the first network shop. The network market registration device is characterized in that, when registering in a second network shop, the customer can directly complete the registration procedure without re-registering in the second network shop due to that the customer's identification data has been stored in the customer database. The present invention also discloses a network market registration method implemented by the network market registration device.
Patent TW-538429-B (TW)
Title: Semiconductor memory device utilizing tunneling magneto resistive effect and method for manufacturing the same
Inventor: HOSOYA KEIJI
IPC: H01L43/08
Filed: 2001-09-25
Granted: 2003-06-21
Abstract: One embodiment of the present invention is provided with the followings: the first memory elements for storing the first state or the second state according to a change in the resistance value, in which each of the first memory elements has one terminal and the other terminal, and the first memory elements are arranged in parallel with each other; the first wiring connected respectively with one terminal of each of the first memory elements; and the second wiring formed in parallel with the first wiring and connected with the other terminal of each of the first memory elements, in which the first state or the second state stored in the first memory element is read out by delivering an electric current from one of the first or the second wirings via the first memory elements to the other of the first or the second wirings.
Patent TW-526548-B (TW)
Title: Method of using floating gate spacer process to build two-bit MONOS/SONOS memory
Inventor: LAI ER-KUEN
IPC: H01L21/28
Filed: 2001-10-19
Granted: 2003-04-01
Abstract: A method of using floating gate spacer process to build two-bit MONOS/SONOS memory is disclosed. Under the poly-silicon control gate, utilize indentation type ONO spacer to produce discontinuous floating gates and get two-bit per cell MONOS/SONOS memory device. The stored two bits of each cell don't interfere with each other, so the device reliability is raised. If the process induces the device threshold voltage Vt variation, according to the feature of the independent and discrete two bits, programming or erasing step can be used to recover the device back to the normal characteristics. In the traditional continuous structure, if the electrons are trapped in the middle of the channel, both sides of the channel cannot be back to normal characteristics and causes device failure. In this invention, the ONO spacer process is self-aligned to finish the floating gate formation and no more multi-mask process is needed.
Patent TW-I260408-B (TW)
Title: Method and apparatus for analyzing mixtures of gases
Inventor: MORRIS PATRICIA A
IPC: G01N27/12
Filed: 2001-11-08
Granted: 2006-08-21
Abstract: Disclosed herein is a method and apparatus for analyzing, sensing and measuring the concentrations of various gases, including NOx, hydrocarbons, carbon monoxide and oxygen, in a multi-component gas system using chemical sensors and chemical sensor arrays. The sensors and sensor arrays use chemo/electro-active materials to analyze and detect the presence of gases.
Patent TW-541533-B (TW)
Title: Semiconductor memory and method for driving the same
Inventor: SHIMADA YASUHIRO
IPC: G11C11/22
Filed: 2001-12-11
Granted: 2003-07-11
Abstract: A semiconductor memory includes a ferroelectric capacitor having a ferroelectric film, a first electrode formed on the ferroelectric film and a second electrode formed under the ferroelectric film. A data writing unit causes a first state in which the ferroelectric film has polarization in a direction from the first electrode to the second electrode or in a direction from the second electrode to the first electrode and has a substantially saturated polarization value or a second state in which the ferroelectric film has polarization in the same direction as in the first state and has a substantially zero polarization value, thereby writing a data corresponding to the first state or the second state in the ferroelectric capacitor. A data reading unit detects whether the ferroelectric capacitor is in the first state or in the second state, thereby reading a data stored in the ferroelectric capacitor.