baber/WOPTO huggingface dataset:
Patent TW-I255843-B (TW)
Title: Processes for making release liners
Inventor: MERTZ WILLIAN J
IPC: B05D3/06
Filed: 1999-12-07
Granted: 2006-06-01
Abstract: Release liners and processes for making the same are disclosed. The release liners include no more than about 1.5 micrograms/square centimeter of nonreacted silicone materials (extractables). The release liners are prepared using solvent coating of radiation curable silicone release materials.
Patent TW-536881-B (TW)
Title: E-mail identification
Inventor: YU YUEH-O
IPC: H04L12/00
Filed: 2000-01-19
Granted: 2003-06-11
Abstract: The invention discloses a method showing the identification data of new e-mail in e-mail box, which consists of the following procedures: first automatically convert the identification data of the said e-mail to a transmission signal; then transmit by initiating transmission signal from an ISP; next receive the transmission signal on a receiving end and convert the transmission signal back to e-mail identification data; in the end display the identification data of the e-mail on the receiving end.
Patent TW-474839-B (TW)
Title: Porous material catalytic combustion burner
Inventor: GOMEZ CORINNE
IPC: A01M13/00
Filed: 1998-07-31
Granted: 2002-02-01
Abstract: The porous material catalytic combustion burner (3) includes in its lower part (3a) a substantially axial cavity (6) adapted to receive a wick (4) designed to feed a combustible liquid (2) to the burner (3) and in its upper part (3b) an annular peripheral area (7) supporting a catalyst and surrounding a central area (40) with no catalyst forming a vaporization area. Its upper part (3b) includes at least one open passage (8) through which the upper part (24) of the cavity (6) communicates with the atmosphere.
Patent TW-459375-B (TW)
Title: Process for forming a lower electrode of a cylindrical capacitor
Inventor: KOSHITAKA TOSHIAKI
IPC: H01L27/04
Filed: 2000-02-23
Granted: 2001-10-11
Abstract: In a process for forming a lower electrode of a cylindrical capacitor in a semiconductor memory, a polysilicon film is formed on an insulator film to cover an inner surface of a hole formed in the insulator film. An exposed surface of the polysilicon film is treated with a reaction accelerator which reacts with a positive photoresist to lower dissolubility of the positive photoresist to a developer liquid. The positive photoresist is deposited on the whole surface to fill up the hole. As a result, the positive photoresist filled up within the hole reacts with the reaction accelerator within the hole and becomes difficult to dissolve to the developer liquid even after the positive photoresist is exposed to light. The whole of the positive photoresist is exposed to light and then developed with the developer so that the positive photoresist remains only within the hole. The polysilicon film is etched back using the remaining positive photoresist as a mask, so that the polysilicon film on an upper surface of the insulator film is removed. Furthermore, the positive photoresist remaining within the hole is removed, and the insulator film is removed so that the polysilicon film remains is the form of a cylinder.
Patent TW-523732-B (TW)
Title: Display device
Inventor: TRIEPELS JOZEPH W
IPC: H01R12/04
Filed: 2000-03-29
Granted: 2003-03-11
Abstract: Conductor tracks (8) on a board or substrate (9) are connected to conductor tracks (14) on a substrate of a display device (3) by gold-gold contacts. Especially if resistant interconnections (15) are used, very reliable pressure contacts are obtained.
Patent TW-I249081-B (TW)
Title: Composition for resist underlayer film and method for producing the same
Inventor: SUGITA HIKARU
IPC: H01L21/027
Filed: 2000-04-11
Granted: 2006-02-11
Abstract: Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4-a, wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c, wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or -(CH2)n-, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
Patent TW-519793-B (TW)
Title: Delay circuit
Inventor: IIDA JUN
IPC: H03K5/13
Filed: 2000-05-25
Granted: 2003-02-01
Abstract: A delay circuit according to the present invention comprises a delay element circuit composed of a plurality of series-connected first circuit elements being connected to a common power supply line and having a delay time varying correspondingly to a voltage of the common power supply line, the delay element circuit being adapted to receive an input signal and output an output signal obtained by delaying the input signal, and a PLL circuit including an oscillator circuit composed of a plurality of series-connected second circuit elements, which are equivalent to the first circuit elements, respectively, are connected to the common power supply line. The PLL circuit is adapted to oscillate the oscillator circuit at a predetermined frequency locked to a reference clock frequency by comparing a phase of the reference clock signal with a phase of an output frequency of the oscillator circuit and controlling the voltage of the power supply line according to a result of the comparison.
Patent TW-461097-B (TW)
Title: Flash memory cell using n+/p-well diode with double poly floating gate
Inventor: CHI MIN-HWA
IPC: H01L29/861
Filed: 2000-07-04
Granted: 2001-10-21
Abstract: A flash memory cell formed in a semiconductor substrate is disclosed. The cell includes a deep n-well formed within the substrate. Next, a p-well is formed within the deep n-well and a n+ drain region is formed within the p-well. A floating gate is formed above the p-well being separated from the substrate by a thin oxide layer. The floating gate is formed adjacent to the n+ drain region. Finally, a control gate is formed above the floating gate, the floating gate and the control gate being separated by a dielectric layer. The new cell is read by measuring the GIDL current at n+/p-well junction, which is exponentially modulated by the floating gate potential (or its net charge). The new cell is programmed by substrate hot electron injection and is erased by F-N tunneling through the overlap area of floating gate and p-well.
Patent TW-I234470-B (TW)
Title: Transdermal absorbable preparation
Inventor: TAKADA YASUNORI
IPC: A61P21/02
Filed: 2000-07-11
Granted: 2005-06-21
Abstract: The purpose of this invention is to provide a transdermal absorbable preparation, which can enhance the transdermal absorbability of the drugs having salt-form acidic drugs and be low irritant to the skin. The transdermal absorbable preparation of this invention is characterized by the incorporation of an addition salt of a basic substance in the transdermal absorbable preparation having salt-form acidic drugs to improve its transdermal absorbability. The transdermal preparation of this invention is preferable a non-aqueous type, and can be exemplified as matrix-type patches or ointments. Further, this invention also relates to a transdermal absorption accelerator for salt-form acidic drugs, containing an addition salt of a basic substance.
Patent TW-442649-B (TW)
Title: Notch inspection apparatus and method based on shading pattern matching
Inventor: SAKAUE YOSHIKAZU
IPC: G06T7/00
Filed: 2000-07-27
Granted: 2001-06-23
Abstract: Anotch inspection method based on shading pattern matching for inspecting notches on semiconductor packages or like objects. A template is created to characteristically express brightness gradations of a notch edge in a picture, i.e., to represent the notch edge in pixels constituting contiguous bright and dark portions of the edge. The template may be created on the basis of notch size information or notch size measurements. The template is checked against inspection in shading pattern matching whereby presence of a notch is determined. Computations of shading pattern matching are omitted regarding portions of the notch edge where brightness remains unchanged.
Patent TW-466682-B (TW)
Title: Shallow trench isolation method
Inventor: YEH MON-LIN
IPC: H01L21/76
Filed: 2000-08-04
Granted: 2001-12-01
Abstract: The present invention provides a shallow trench isolation method used for a semiconductor chip. The semiconductor chip includes a silicon substrate, a silicon oxide layer formed on the surface of the silicon substrate, a silicon nitride layer formed on silicon oxide layer, and at least one shallow trench formed on a predefined area of the surface of the semiconductor chip and passing through the silicon nitride layer and the silicon oxide layer to reach the silicon substrate for a predefined depth. The method comprises using a first chemical vapor deposition process and a first chemical mechanical polishing (CMP) process to form an insulator in the shallow trench; then, removing the silicon nitride layer and the silicon oxide layer, and performing a two-stage silicon oxide formation process; then using a second CMP and an etching back process to remove the two-stage silicon oxide layer.
Patent TW-558678-B (TW)
Title: Construction method and device of controller
Inventor: LIOU JENG-SHIAN
IPC: G05D9/00
Filed: 2000-10-27
Granted: 2003-10-21
Abstract: A construction method and device of controller are disclosed. The construction method of controller is mainly to dispose the controlling device having permanent magnet on power, liquid, gas, solid and other various controllers or equipments arbitrarily, or on electrical or electronic products, voice-generation apparatus, toilet equipment, other various facilities or equipments arbitrarily. The controller device mainly has at least a magnetic element having permanent magnet, wherein the magnetic element can be applied alone, and can also be assembled into multi-purpose, multi-functional controller using various methods appropriate. The magnetic force is formed by integral formation, separation, adding the magnetic member, and other various methods appropriate for construction. The magnetic force can be utilized to enhance the actuation capability of various controller, the controller with magnetic force can operate the movements of the path member or other members by magnetic adhesion, magnetic repulsion, non-automatic, automatic, and other various ways appropriate. It may also be matched with the action force, mechanical force, elastic force, electromechanical force, magnetic force, floating force, gravity, water chamber principle and other various ways appropriate for automation. It may also be applied by matching with the transmission device, buoy, sensor, functioning object, gear, lever, power-saving member, and other objects in an appropriate way arbitrarily, wherein the buoy, sensor can have the function of controlling the material flow, informing the variation by using magnetic force. The functioning object can have the effect of engaging, pulling/braking, plumb, resetting, and other effects. Each member can be the floating body arbitrarily or also has the buoy function. The buoy, path, each member can also be associated together, thereby may have other features/functions.
Patent TW-469490-B (TW)
Title: Consecutive deposition system
Inventor: TEPMAN AVI
IPC: H01L21/00
Filed: 2000-10-31
Granted: 2001-12-21
Abstract: The present invention generally provides a system for processing substrates having a carrier disposed primarily in at least one processing chamber and at least one shuttle for transferring substrates between the processing chamber and a load lock chamber. A plurality of processing chambers, load lock chambers, and other chambers can be joined to create a series of modular chambers through which the substrates are processed. Preferably, the carrier is only exposed to the processing environment, i.e., the carrier does not shuttle into a non-processing chamber. Thus, during continuous sequential processing of substrates, thermal cycling of the carrier is reduced. The carrier is reversibly moved within the processing chamber along a track. Multiple processing zones separated by partitions allow a plurality of processing regimes to occur within the same processing chamber.
Patent TW-478107-B (TW)
Title: Method for producing copper dual damascene
Inventor: LUO JI-JIN
IPC: H01L21/768
Filed: 2000-11-27
Granted: 2002-03-01
Abstract: A method for producing a copper dual damascene mainly uses an activation of the to-be-connected metal surface layer on the bottom of a via to generate a copper seed crystal. An electroless plating method is used to grow the seed from the bottom towards the top. The conductive trench part is filled with copper by a PVD or formed with a copper seed crystal by a PVD and then an electroplating of copper is performed to achieve the objective of having no void. The method comprises: using an activation solution to activate a metal layer on the to-be-connected line of a substrate formed with a dual damascene pattern; using an electroless plating of copper to grow copper from the bottom towards the top on the whole via; depositing a metal barrier layer in the line trench; using a PVD process to fill in copper or using an electroplating process to plate copper until the line trench is filled up with a copper metal layer; and applying a chemical mechanical polishing process.
Patent TW-501067-B (TW)
Title: Handwriting character recognition system using the angle and distance as the extracted features
Inventor: CHEN FRED HUAI-YAN
IPC: G06K9/74
Filed: 2000-12-29
Granted: 2002-09-01
Abstract: The present invention provides a handwriting character recognition system using the angle and distance as the extracted features, which employs the angle and distance for real-time handwriting input character recognition. The main characteristic of the present invention is using the angle to replace the stroke angle in the prior art as the recognition features, so that the input character is independent of the coordinate system of the input device theoretically, and the structures and positions between each of the segments and strokes of the recognition characters will not be influenced by the errors from the input device and human factors, so as to improve the recognition rate.
Patent TW-568894-B (TW)
Title: Ultralow firing temperature compensating ceramic composition for pure silver electrode, sintering flux and laminated ceramic element obtained therefrom
Inventor: LI WEN-SHI
IPC: C04B35/01
Filed: 2000-12-29
Granted: 2004-01-01
Abstract: The invention is directed to an ultralow firing temperature compensating ceramic composition, which comprises a ceramic material system represented by formula (I) Baw(NdxSmy)2TizOw+3x+3y+3z and a sintering flux represented by formula (II) (Zn, Si, Cu, Al, Mg, Ba, Bi, Ti)O. The ceramic material system of formula (I) comprises 10 to 30 mole % barium oxide, 10 to 30 mole % neodymium oxide, 0 to 20 mole % samarium oxide and 40 to 70 mole % titanium oxide. The sintering flux of formula (II) constitutes 5 to 40 mole % of the composition. The sintering flux of formula (II) comprises 1 to 5 weight % of magnesium, 1 to 5 weight % copper oxide, 5 to 30 weight % zinc oxide, 20 to 60 weight % bismuth oxide, 5 to 10 weight % aluminium oxide and 1 to 20 weight % boron oxide. The invention is also directed to a sintering flux system and a laminate ceramic element which is produced from the ultralow firing temperature compensating ceramic composition.
Patent TW-479282-B (TW)
Title: Method to reduce stress between silicon nitride spacer and substrate
Inventor: CHERN HORNG-NAN
IPC: H01L21/28
Filed: 2001-01-08
Granted: 2002-03-11
Abstract: This invention provides a method to reduce stress between silicon nitride spacer and substrate on a semiconductor wafer. The semiconductor wafer contains the substrate having a gate electrode. A passivation layer is formed on top of the gate electrode and a silicon oxide spacer is formed on the gate electrode and around the side wall of the passivation layer. A dielectric layer is formed on the surface of the semiconductor wafer covering the gate electrode. An etch back process is carried out to remove part of the dielectric layer and part of the silicon oxide spacer. Then, the silicon nitride spacer is formed around the side wall of the passivation layer. As the silicon nitride spacer is formed on the surface of the dielectric layer, excessive stress between the silicon nitride spacer and the substrate is prevented.
Patent TW-518328-B (TW)
Title: Process for the epoxidation of olefins
Inventor: HOFEN WILLI
IPC: C07D301/12
Filed: 2001-01-12
Granted: 2003-01-21
Abstract: The invention described herein relates to a process for the catalytic epoxidation of olefins with hydrogen peroxide in a continuous flow reaction system, wherein a gaseous phase containing an olefin and a liquid phase containing the hydrogen peroxide is present in the reaction system and the gaseous phase flows in countercurrent to the liquid phase.
Patent TW-460271-B (TW)
Title: Method and device for single trimming in preliminary grafting of pear tree
Inventor: LIAW SHII-LIH
IPC: A01G3/08
Filed: 2001-02-08
Granted: 2001-10-21
Abstract: Disclosed is a method and device for single cutting in preliminary grafting of pear tree, in particular to one where the multiple, preliminary trimming procedures required for the grafting of a stem and a scion of the pear tree may be accomplished in a single trimming continuously. The cutting tool includes a front stem cutting device, a stem slitting device, a graft front cutting device, a graft engaging face cutting device, and a graft rear cutting device, and is controlled by a stationary grip and a mobile grip. The stem is withheld by the cutting tool and the mobile grip is clamped for cutting and slitting the stem. The graft encases a bud with an appropriate length to be inserted into the cutting tool. The cutting tool is then opened such that the mobile grip is inverted to engage the mobile grip of the cutting tool, so as to cut and to form the front end face of the graft, to trim the engaging face of the graft, and to cut off the graft into a grafting length thereby forming a rear end face continuously, such that the multiple, preliminary trimming procedures required for the graft may be accomplished in a single trimming efficiently and continuously.
Patent TW-490567-B (TW)
Title: Mechanism for connecting test head to handler
Inventor: OKAMOTO KAZUMI
IPC: G01R31/01
Filed: 2001-02-12
Granted: 2002-06-11
Abstract: An IC under test can be tested in a suitable temperature environment merely by connecting a test head to an automatic handler, without complicated operations. The automatic handler is connected to the test head through a piping portion in the automatic hander and a piping portion in the test head. The automatic hander has a dry air supply unit which keeps a testing environment of the IC under test by supplying dry air to the test head through the piping portions. The automatic handler has a lead hole, while the test head has a connection hole leading to the lead hole when the automatic handler and the test head are connected to each other.
Patent TW-497205-B (TW)
Title: Method for producing electrically insulating layer
Inventor: LAI JIUN-REN
IPC: H01L21/76
Filed: 2001-03-01
Granted: 2002-08-01
Abstract: The present invention relates to a method for producing an electrically insulating layer, particularly a method for producing an electrically insulating layer by using the difference in etching rate between the oxide and the nitride. The invented method uses the characteristics of different etching rates between the oxide layer and the nitride layer, i.e. the etching rate of the oxide being higher than that of the nitride during the initial stage of an etching process to produce an electrically insulating layer and the etching rate of the oxide being lower than that of the nitride when the etching process proceeds to a stage where the oxide layer contacts the nitride layer or the contact point of the oxynitride layer is reached, thereby producing an electrically insulating layer with a smoother surface.
Patent TW-461941-B (TW)
Title: Vehicular braking drum
Inventor: RYU KEIJI
IPC: B60B27/00
Filed: 2001-03-01
Granted: 2001-11-01
Abstract: This invention is related to a vehicular braking drum, including: a cylindrical portion coaxially surrounding the cylindrical wheel hub affixed to the vehicular shaft; and a vehicular braking drum integrally connected to an end of the cylindrical portion for connecting between the wheel hub and a connecting portion at an end of the cylindrical portion, whereby the number of elements parts and assembly man-hour can be reduce, and to prevent squeaking of the braking. A ring-like thick-walled part 6c is integrally formed in the cylindrical part 6.
Patent TW-514706-B (TW)
Title: Optical system having retro-reflectors
Inventor: LI KENNETH K
IPC: G02B5/08
Filed: 2001-03-07
Granted: 2002-12-21
Abstract: A method and system for condensing and collecting electromagnetic radiation onto a target surface comprised generally of a radiation source, a primary reflector and a retro-reflector having a shape complementary to the shape of the primary reflector is disclosed. The primary reflector has a reflecting surface for reflecting the radiation from the source which is substantially concave in shape. The radiation source emits substantially uniform radiation flux in substantially all directions which is collected by the primary reflector and redirected toward the target surface. The retro-reflector, having a complementary shape which depends upon the shape of the primary reflector, is positioned so as to intercept a portion of the radiation redirected toward the target surface. The retro-reflector reflects the intercepted portion of the radiation back toward said primary reflector along the same path such that the redirected radiation is channeled back through the source. In such a manner, flux density at the target surface is improved.
Patent TW-490883-B (TW)
Title: Antenna
Inventor: YANG JR-SHIANG
IPC: H01Q1/38
Filed: 2001-04-09
Granted: 2002-06-11
Abstract: An antenna include a substrate including a plurality of accessory circuit components installed in the first ground line area and the second ground line area in separation with the first ground line area by a partition area; an antenna component installed on the said second ground line area to receive data signal of external environment; a transmission line coupled to the said antenna component and installed on the said second ground line to transmit the said data signal; and a processing chip installed in the said first ground line area and coupled to the said transmission line and accessory circuit component for processing the transmitted data signal of the said transmission line.
Patent TW-535431-B (TW)
Title: Mapping arrangement for digital communication system
Inventor: FIMOFF MARK
IPC: H04N21/438
Filed: 2001-04-16
Granted: 2003-06-01
Abstract: A receiver receives a digital signal. The digital signal contains a frame of robust VSB data and ATSC data, and the digital signal further contains a map. The map contains information indicating a location of the robust VSB data and ATSC data in the frame. A decoder of the receiver decodes the digital signal. A processor of the receiver processes at least one of the robust VSB data and the ATSC data according to the location information contained in the map.