Patent SG-11201907741P-A (SG)
Title: Field-effect transistor, method for producing same, display element, display device, and system
Inventor: ARAE SADANORI
IPC: H01L29/66
Filed: 2018-03-15
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIPO I PCT (51) International Patent Classification: HO1L 29/423 (2006.01) HO1L 29/66 (2006.01) HO1L 29/417(2006.01) (21) International Application Number: PCT/JP2018/010350 (22) International Filing Date: 15 March 2018 (15.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 2017-053733 17 March 2017 (17.03.2017) JP 2018-045946 13 March 2018 (13.03.2018) JP (71) Applicant (for all designated States except US): RICOH COMPANY, LTD. [JP/JP]; 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). (72) Inventors; and (71) Applicants (for US only): ARAE, Sadanori [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). ANDO, Yuichi [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). NAKAMURA, Yuki [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). ABE, Yukiko [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). MATSUMOTO, Shinji [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). SONE, Yuji [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). UEDA, Naoyuki [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). SAOTOME, Ryoichi [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). KUSAYANAGI, Minehide [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1- chome, Ohta-ku, Tokyo, 1438555 (JP). (74) Agent: ITOH, Tadashige et al.; 16th Floor, Marunouchi MY PLAZA (Meiji Yasuda Seimei Building), 1-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 1000005 (JP). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = (54) Title: FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, DISPLAY ELEMENT, DISPLAY DEVICE, AND SYSTEM [Fig. 1A] 10 15 mu °million °nolo om mo mum° oimIE (10) International Publication Number WO 2018/169024 Al // ► X 13 O cr 00 O C (57) : () To miniaturize a field-effect transistor. (Means of Achieving the ) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode. [Continued on next page] WO 2018/169024 Al MIDEDIMOMMIDIIMMOIDEMIEHOMIDEHEMOVOIS TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))