baber/WOPTO huggingface dataset:
Patent TW-472342-B (TW)
Title: Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device
Inventor: LETAVIC THEODORE
IPC: H01L21/336
Filed: 2000-11-24
Granted: 2002-01-11
Abstract: A lateral thin-film silicon-on-insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral transistor device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region and forms a lightly-doped drain region, and a drain contact region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by a surface insulation region. In order to increase breakdown voltage and/or reduce ""on"" resistance, the lateral drift region is provided with at least a portion with a retrograde doping profile. This may advantageously be done by doping the semiconductor substrate, oxidizing the substrate to form the buried insulating layer, forming the SOI layer on the buried insulating layer, and thermally diffusing dopant from the buried insulating layer into the SOI layer.
Patent TW-522214-B (TW)
Title: Temperature adjusting device for thermal fluid medium
Inventor: SHIMODA KAZUYOSHI
IPC: F25B29/00
Filed: 2000-12-02
Granted: 2003-03-01
Abstract: To the object of the present invention is to provide a temperature adjusting device for thermal fluid medium of which temperature adjustment range is expanded for an automatic vending machine, wherein an electrical power energy at the time of starting operation is reduced and its cooling mode and heating mode can be changed over. The solution of the present invention is that a heat exchanger is arranged in a circuit ranging from a compressor to a condenser, wherein its primary side circuit is applied as a circuit ranging from the compressor to the condenser. A first bypass circuit (passing through a secondary side circuit of the heat exchanger and circulating back to the thermal medium fluid circulation circuit) is installed at a downstream side of a pump. Temperature of the thermal medium fluid is controlled under the application of a flow rate control valve. Further, a second bypass circuit connected from the downstream side of the condenser to the downstream side of an evaporator is installed. Both a capillary tube and a solenoid valve are arranged in the second bypass circuit, the cooling temperature is controlled and an over-heating of the compressor is prevented.
Patent TW-590741-B (TW)
Title: Fungicidal active compound combinations
Inventor: WACHENDORFF-NEUMANN ULRIKE
IPC: A01N43/36
Filed: 2000-12-12
Granted: 2004-06-11
Abstract: The novel active compound combinations of a fluoro-benzothiazole derivative of the formula and the active compound groups (1) to (51) listed in the description have very good fungicidal properties.
Patent TW-540136-B (TW)
Title: Method for forming a metallization structure in an integrated circuit
Inventor: LAU GORLEY L
IPC: H01L21/44
Filed: 2000-12-22
Granted: 2003-07-01
Abstract: A method for fabricating a metallization structure is presented. The method preferably includes ion metal plasma depositing a wetting layer within a cavity defined in a dielectric layer. The wetting layer preferably includes titanium. The method preferably further includes sputter depositing a bulk metal layer within the cavity and upon the wetting layer. Sputter depositing of the bulk metal layer is preferably performed in a single deposition chamber at least until the cavity is substantially filled.
Patent TW-I287549-B (TW)
Title: Process for preparing polyurethane dispersions having improved shear stability and polyurethane film
Inventor: KOONCE WILLIAM A
IPC: C08G18/48
Filed: 2001-01-30
Granted: 2007-10-01
Abstract: A polyurethane dispersion prepared using a two step addition of different surfactants has greater shear stability than a similar dispersion prepared using only a single surfactant or a single step addition of surfactants.
Patent TW-I239825-B (TW)
Title: A chopper
Inventor: MICHAEL WALTER
IPC: B26D3/26
Filed: 2001-02-06
Granted: 2005-09-21
Abstract: A device for the size reduction of foodstuffs, such as onions and likewise, with a housing (1-3) which may be turned over the goods to be reduced in size and with a knife (19) which is displaceable downwards against the force of a spring (14) by way of an actuation mechanism (9) with a push button (12) and a plunger (11). The knife (19) with the upwards movement by the guiding in the housing (1-3) is rotated about an angle and by way of a positive displacement (15, 16) the rotation of the actuation mechanism (9) relative to the housing (1-3) is limited in one direction. The actuation mechanism newly comprises a cap (40) open at the bottom in which the push-button (12) is rotatably mounted, wherein the push button (12) and the cap (40) in the axial direction are rigidly connected to one another.
Patent TW-500690-B (TW)
Title: Multi-layer, self-aligned vertical comb-drive electrostatic actuators and fabrication methods
Inventor: PANNU SATINDERPALL S
IPC: B81C99/00
Filed: 2001-03-23
Granted: 2002-09-01
Abstract: A method of fabricating multi-layer vertical comb-drive actuator that includes a first comb structure having a plurality of first comb fingers and a second comb structure having a plurality of second comb fingers, wherein the first and second comb fingers are substantially interdigitated. The present invention includes masking and etching of a structure that contains these multiple layers, wherein the first and second comb fingers are simultaneously fabricated. The first and second comb fingers may include two or more stacked conductive layers electrically isolated from each other by an insulating layer or an air gap. Alternatively, either the first or second comb fingers may include only one conductive layer.
Patent TW-527804-B (TW)
Title: Method and apparatus for bandwidth management of TCP traffic employing post-acknowledgement control
Inventor: WEI HUAN-YUN
IPC: H04L47/32
Filed: 2001-05-25
Granted: 2003-04-11
Abstract: An apparatus for bandwidth management of TCP traffic on a communication network comprises a forward data controller and a backward Ack controller. The forward data controller provides at least a queue for providing the temporary sequence of exited data of TCP traffic. The backward Ack controller employs a post-acknowledgement control mechanism and multiple queues comprised by multiple buffer registers capable of applying temporary sequence for entry Ack of the TCP traffic. The post-acknowledgement control mechanism comprises a Ack pacing controller capable of controlling and making the release time gap of packet in the queue of the backward Ack controller uniform. When the forward data controller is partially cleaned up resulting from sending the temporarily waiting exited data to the receiver of the exited data, the post-acknowledgement control makes the Ack pacing controller allow the backward Ack controller to sequentially release the Ack evenly spaced and queued in the queue to the sender of the exited data.
Patent TW-510859-B (TW)
Title: Resistant identification apparatus of printhead
Inventor: YANG LI-CHANG
IPC: B41J2/195
Filed: 2001-06-07
Granted: 2002-11-21
Abstract: The present invention relates a resistant apparatus applied to identifying a printhead with a certain printer. The apparatus of the present invention primarily includes a plurality of identification units. Each of the identification units further includes a transistor, a first resistor and a second resistor. By adjusting the first resistor and the second resistor, the apparatus can generate numerous identification types without changing fabrication processes.
Patent TW-I227678-B (TW)
Title: Entertainment apparatus and monitor device using this apparatus
Inventor: KUTARAGI KEN
IPC: A63F13/98
Filed: 2001-06-08
Granted: 2005-02-11
Abstract: The present invention provides an entertainment apparatus that can serve to display images and to reproduce sound either by connecting to a television set, or only by itself. It has an apparatus body (1) for generating sound and video signals and a monitor device (90) attached to the apparatus body (1) for outputting sound and displaying images based on the sound and video signals outputted from the apparatus body. This apparatus body (1) generates sound and video signals and outputs them via a signal output terminal. The monitor device (90) comprises a monitor portion (91) which includes a display device (911) for displaying an image and a sound device (912) for outputting sound, a fixing portion (95) for connecting and fixing the monitor portion (91) to the casing, a signal input terminal for receiving a signal from the signal output terminal connected thereto when the monitor device is connected to the casing. The monitor portion (91) is rotatably connected to the fixing portion (95).
Patent TW-I290909-B (TW)
Title: Titanium oxide, and photocatalyst and photocatalyst coating composition using the same
Inventor: SAKATANI YOSHIAKI
IPC: B01J37/03
Filed: 2001-07-05
Granted: 2007-12-11
Abstract: A titanium oxide showing sufficiently high photocatalytic activities by irradiation of visible light is provided. Using the titanium oxide, an excellent photocatalyst and photocatalyst coating composition are also provided. The titanium oxide has a selected ion chromatogram in which an evolution gas having 28 of a ratio of mass number to electric charge quantity exhibits at least one peak at about 600 DEG C or higher, the selected ion chromatogram being measured in a thermogravimetry-mass-spectroscopy.
Patent TW-I241317-B (TW)
Title: Aluminosilicate stabilized halogenated polymers
Inventor: WYPARTQ ROMAN
IPC: C08K3/34
Filed: 2001-07-20
Granted: 2005-10-11
Abstract: The present invention describes halogenated polymer resins stabilized with one or more co-stabilizers, at least one co-stabilizer comprising a synthetic crystalline aluminosilicate of the formula M2/nO.Al2O3.ySiO2.wH2O, in which M is a charge balancing cation, n is the valence of M and is 1 or 2, y is the number of moles of SiO2 per mole of Al2O3, and is 1.85 to 15 with a preferred range of about 2 to 5, and w is the moles of water of hydration per molecule of said aluminosilicate, wherein said aluminosilicate has a mean crystallite size in the range of about 0.01 mum to about 1 mum and a mean particle size in the range of about 0.1 to 10 mum. Also described is a method for stabilizing halogenated polymers such as PVC and CPVC by incorporating said aluminosilicate into a formulation thereof. A zeolite process improvement for creating a dehydrated zeolite that does not substantially rehydrate is also described. The zeolite created by such process is ideal for use as a co-stabilizer of halogenated polymer resins.
Patent TW-509989-B (TW)
Title: Method of manufacturing semiconductor device and the semiconductor device
Inventor: TANAKA MASAYUKI
IPC: H01L27/115
Filed: 2001-09-10
Granted: 2002-11-11
Abstract: This invention relates to the use of large quantity of photons in a short period of time to irradiate a semiconductor substrate so that the contact hole connecting the substrate and wiring and films formed on the substrate such as silicide layer and silicon nitride layer can be improved. During the formation of fine contact holes, an SiN film 109 is formed inside of the contact hole of contact wiring with W film 108 embedded. A heating process at below 600 DEG C is carried out and, meanwhile, a heating process for shorter than 10 msec with light whose main wavelength is shorter than the light absorbing end of silicon is also performed. This leads to a reaction at the interface between the TiN film and the substrate 100 to reduce the native oxide film. Therefore, the dopant profile of the diffusion layer is not affected. Moreover, on SiN film above the polysilicon gate, irradiation of a white light with wavelength greater than 200 nm and energy between 10 to 100 J/cm<SP>2</SP> is performed at least once within 10 msec to remove hydrogen coming from the heating treatment and prevent device degradation from a boron punch-through phenomenon.
Patent TW-574060-B (TW)
Title: A process of crystallization
Inventor: OHKOSHI FUMIO
IPC: C07C51/265
Filed: 2001-09-28
Granted: 2004-02-01
Abstract: The present invention provides a process in which a terephthalic acid solution or the slurry containing some of the crystal of terephthalic acid is sent into a crystallizer, the terephthalic acid is allowed to crystallize in the crystallizer, and then the slurry containing the crystal and solvent is generated and discharged from the crystallizer, wherein the slurry which it is discharged from the crystallizer is introduced to the tangential direction entrance of the liquid cyclone, the slurry which it flows out from the lower exit of the liquid cyclone as a descending flow is returned to the crystallizer, and the slurry which it flows out from the upper exit of the liquid cyclone is discharged. By this process, it is possible to get the crystal with a big particle diameter, have no attachment or accumulation of the crystal in the crystallizer, and make a stable crystallization in a long time.
Patent TW-523571-B (TW)
Title: Small-volume NOx adsorber
Inventor: BRUECK ROLF
IPC: B01D53/94
Filed: 2001-10-30
Granted: 2003-03-11
Abstract: A support body is described which has an adsorber material for adsorbing nitrogen oxide in an exhaust gas which is generated in at least one combustion chamber of an internal-combustion engine. A method is described for operating an internal-combustion engine having an exhaust system which has a support body of this type. All the combustion chambers of the internal-combustion engine together have an overall combustion chamber volume, and the support body has an adsorber volume. The adsorber volume is configured to be less than 75%, in particular less than 45%, and preferably even less than 5% of the combustion-chamber volume. A support body of this type ensures a good cold-starting performance of the exhaust system and prevents the emission of nitrogen oxides, in particular when using the proposed method of operating the exhaust system.
Patent TW-507375-B (TW)
Title: A millimeter-wave passive FET switch using impedance transformation networks
Inventor: WANG HUEI
IPC: H01L29/00
Filed: 2001-11-01
Granted: 2002-10-21
Abstract: The present invention provides a millimeter-wave passive FET switch by using impedance transformation network to transfer the effective capacitor seen from the drain to source of an FET at off-state to low impedance, while transfer low impedance seen at on-state to high impedance. Since both on-state and off-state are transferred to high impedance and low impedance respectively, a high-performance switch can be achieved. Since the size of the transformation network is small, the performance of the switch can be promoted with low cost.
Patent TW-508748-B (TW)
Title: Bilayer silicon carbide based barrier
Inventor: YANG NENG-HUI
IPC: H01L21/768
Filed: 2001-11-29
Granted: 2002-11-01
Abstract: A bilayer SiC-based barrier is formed over a metallic wiring layer and a first dielectric layer. The bilayer SiC-based barrier consists of a nitrogen-doped SiC bottom layer and an oxygen-doped SiC top layer. The nitrogen-doped SiC bottom layer has a minimum thickness to prevent metal atoms of the metallic wiring layer from diffusing out to a second dielectric layer and, at the same time, avoid oxygen atoms of the oxygen-doped SiC top layer from diffusing into the metallic wiring layer.
Patent TW-512077-B (TW)
Title: Detoxification treatment process of incineration ash by diffusing and decomposing incineration ash atoms and equipment for the same process
Inventor: IWASAKI KAZUKO
IPC: B09B3/00
Filed: 2001-12-18
Granted: 2002-12-01
Abstract: This invention provides an incineration ash detoxification treatment process which enables inhibition of environmental pollution due to pollutants derived from or contained in municipal solid waste and/or general incineration ash, such as heavy metals and dioxins while subjecting generated off-gas to detoxification treatment and also to provides an equipment for the process. This detoxification treatment process comprises: subjecting incineration ash to dehydration/drying and grinding treatment; and detoxifying the treated incineration ash in a space which is isolated from the outside air and maintained in such a state that the oxygen concentration in the space is low, by subjecting toxic substances in the incineration ash to reduction treatment to detoxify the toxic substances and converting heavy metals in the incineration ash into stable compounds.
Patent TW-575703-B (TW)
Title: Yarn and fabric having improved abrasion resistance
Inventor: ZHU REIYAO
IPC: A41D31/00
Filed: 2001-12-21
Granted: 2004-02-11
Abstract: The present invention relates to a yarn having improved abrasion resistance and a fabric made from that yarn, as well as process for preparing the yarn and fabric. The yarn includes (a) aramid fibers and (b) up to 40 weight percent of fibers of synthetic polymers having a melting point between 200 and 300 degrees C, based upon the total weight of (a) and (b) only, the yarn or fabric including the yarn being heat treated at a temperature below the melting point of the fibers of component (b).
Patent TW-513805-B (TW)
Title: Vertical read only memory and the process thereof
Inventor: HUANG SHUEI-CHIN
IPC: H01L21/8246
Filed: 2001-12-28
Granted: 2002-12-11
Abstract: A vertical read only memory and the process thereof are disclosed, wherein a trench is formed in the substrate, the source/drain are fabricated on the bottom of the trench, the gate is formed on the surface of the substrate; a polysilicon bitline electrically connected to the source/drain is disposed in the trench; the substrate in the polysilicon and the trench sidewall is isolated by the dielectric layer, and the sidewall of the trench is used as the encoding region.
Patent TW-544883-B (TW)
Title: Manufacturing method of semiconductor device
Inventor: SHIMANUKI YOSHIHIKO
IPC: H01L21/56
Filed: 2002-02-22
Granted: 2003-08-01
Abstract: The subject of the present invention is to provide a compact non-leaded semiconductor device having a large number of electrode terminals. A non-leaded resin-sealed semiconductor device is manufactured by the steps of the followings: providing a conductive flat substrate (metal plate) of copper plate, copper alloy or the like; fixing semiconductor elements respectively to predetermined positions on the principal surface of the substrate by an insulating adhesive; electrically connecting electrodes on the surfaces of the semiconductor elements with predetermined partition parts of the substrate at the periphery of the semiconductor elements by conductive wires; forming an insulating resin layer on roughly entire region of the principal surface of the substrate to cover the semiconductor elements and wires; selectively removing the substrate from the rear of substrate to form plural electrically independent partition parts whereof at least some are external electrode terminals; and selectively removing the resin layer to segment the area into regions containing the semiconductor elements and plural partition parts around the semiconductor elements.
Patent TW-I227213-B (TW)
Title: Device for loading and/or unloading a freight transport compartment
Inventor: ROHR CHRISTOPH
IPC: B65G67/20
Filed: 2002-04-02
Granted: 2005-02-01
Abstract: The invention relates to a device for loading and/or unloading a freight transport compartment (10, 11), using at least one conveyer unit (13, 14) that is installed in a loading area (12), the conveyer unit being capable of conveying several goods units simultaneously (15). The aim of the invention is to reduce the costs and increase the flexibility of a device of this type. To achieve this, the conveyer unit (13, 14) comprises at least one element (18, 19) that can be guided into the freight transport compartment (10, 11) and forms a placing surface (16, 17) for the goods units (15).
Patent TW-565874-B (TW)
Title: Semiconductor device
Inventor: NAKA YASUHIRO
IPC: H01L23/36
Filed: 2002-04-02
Granted: 2003-12-11
Abstract: In a multi-chip-module type semiconductor device, first and second semiconductor elements, a main component of each of the semiconductor elements being semiconductor material to form a semiconductor electric circuit in each of the semiconductor elements, are mounted on and electrically connected to a substrate adapted to be mounted onto a mother board and to be electrically connected to the mother board so that the each of the semiconductor elements is electrically connected to the mother board through the substrate.
Patent TW-583300-B (TW)
Title: Optically active compound and liquid crystal composition containing the compound
Inventor: NORISUE YASUMASA
IPC: C09K19/58
Filed: 2002-04-11
Granted: 2004-04-11
Abstract: An optically active compound of the following general formula (1) useful as a chiral dopant, and use thereof, wherein each of X and Y is independently a hydrogen atom or a fluorine atom, R is (C2H5)2CHCH2C*H(CH3)- or Ph-C*H(CH3)-, A is -Ph(W)-COO-Ph-, -Ph-Ph-COO-, -Cy-COO-Ph-, -Ph(W)-OOC-Ph-COO-, -Ph(W)-OOC-Cy-COO-, -Ph(W)-OOC-Np-COO- or -Np-OOC-, in which Ph- is a phenyl group, -Ph- is a 1,4-phenylene group, -Ph(W)- is -Ph- or monofluoro substituted -Ph-, Cy- is a trans-1,4-cyclohexylene group and -Np- is a 2,6-naphthylene group, and C* is an asymmetric carbon. The optically active compound of the present invention has a large helical twisting power (HTP) of at least 14 and suitably has the property that its induced helical pitch decreases in length with an increase in temperature, so that it has an excellent value as a chiral dopant for a nematic liquid crystal composition.
Patent TW-544973-B (TW)
Title: Laminated balun transformer
Inventor: YAZAKI HIROKAZU
IPC: H01F19/06
Filed: 2002-04-15
Granted: 2003-08-01
Abstract: The present invention relates to a laminated balun transformer. By serially connecting the circuit part 24 with the circuit part 27 via the relay terminal 43, the unbalanced transmission line is formed. The balanced transmission line is composed of the circuit parts 25 and 28. The circuit parts 24 and 25 are electro-magnetically coupled to form a coupler. In the same way, the circuit parts 27 and 28 are electro-magnetically coupled to form a coupler. The ground terminal G1 is connected to the balanced transmission line containing the circuit parts 25 and 28. The shield terminal G2 is connected to the leading out parts 30a to 32a of the shield electrodes 30 to 32. These two terminals G1 and G2 are electrically independent.
Patent TW-564516-B (TW)
Title: Fabrication techniques for addressing cross-point diode memory arrays
Inventor: TAUSSIG CARL
IPC: H01L25/10
Filed: 2002-05-02
Granted: 2003-12-01
Abstract: A memory array and some addressing circuitry therefore are formed by creating circuit elements at the crossing-points of two layers of electrode conductors that are separated by a layer of a semiconductor material. The circuit elements formed at the crossing-points function as data storage devices in the memory array, and function as connections for a permuted addressing scheme for addressing the elements in the array. In order to construct the addressing circuitry, the electrode conductors are fabricated with a controlled geometry at selected crossing-points such that selected circuit elements have increased or decreased cross-sectional area. By applying a programming electrical signal to the electrodes. The electrical characteristics (e.g. resistance) of selected circuit elements can change according to the controlled electrode geometry.