Moussab/ORKG-training-evaluation-set huggingface dataset:
Research field: Engineering
Title: Engineered Hierarchical CuO Nanoleaves Based Electrochemical Nonenzymatic Biosensor for Glucose Detection
Abstract: In this study, we synthesized hierarchical CuO nanoleaves in large-quantity via the hydrothermal method. We employed different techniques to characterize the morphological, structural, optical properties of the as-prepared hierarchical CuO nanoleaves sample. An electrochemical based nonenzymatic glucose biosensor was fabricated using engineered hierarchical CuO nanoleaves. The electrochemical behavior of fabricated biosensor towards glucose was analyzed with cyclic voltammetry (CV) and amperometry (i–t) techniques. Owing to the high electroactive surface area, hierarchical CuO nanoleaves based nonenzymatic biosensor electrode shows enhanced electrochemical catalytic behavior for glucose electro-oxidation in 100 mM sodium hydroxide (NaOH) electrolyte. The nonenzymatic biosensor displays a high sensitivity (1467.32 μ A/(mM cm 2 )), linear range (0.005–5.89 mM), and detection limit of 12 nM (S/N = 3). Moreover, biosensor displayed good selectivity, reproducibility, repeatability, and stability at room temperature over three-week storage period. Further, as-fabricated nonenzymatic glucose biosensors were employed for practical applications in human serum sample measurements. The obtained data were compared to the commercial biosensor, which demonstrates the practical usability of nonenzymatic glucose biosensors in real sample analysis.
Extracted statement — keywords: CuO nanoleaves
Research field: Engineering
Title: Engineered Hierarchical CuO Nanoleaves Based Electrochemical Nonenzymatic Biosensor for Glucose Detection
Abstract: In this study, we synthesized hierarchical CuO nanoleaves in large-quantity via the hydrothermal method. We employed different techniques to characterize the morphological, structural, optical properties of the as-prepared hierarchical CuO nanoleaves sample. An electrochemical based nonenzymatic glucose biosensor was fabricated using engineered hierarchical CuO nanoleaves. The electrochemical behavior of fabricated biosensor towards glucose was analyzed with cyclic voltammetry (CV) and amperometry (i–t) techniques. Owing to the high electroactive surface area, hierarchical CuO nanoleaves based nonenzymatic biosensor electrode shows enhanced electrochemical catalytic behavior for glucose electro-oxidation in 100 mM sodium hydroxide (NaOH) electrolyte. The nonenzymatic biosensor displays a high sensitivity (1467.32 μ A/(mM cm 2 )), linear range (0.005–5.89 mM), and detection limit of 12 nM (S/N = 3). Moreover, biosensor displayed good selectivity, reproducibility, repeatability, and stability at room temperature over three-week storage period. Further, as-fabricated nonenzymatic glucose biosensors were employed for practical applications in human serum sample measurements. The obtained data were compared to the commercial biosensor, which demonstrates the practical usability of nonenzymatic glucose biosensors in real sample analysis.
Extracted statement — Sensing material: CuO nanoleaves
Research field: Engineering
Title: Enhancement of c-Axis Oriented Aluminum Nitride Films via Low Temperature DC Sputtering
Abstract: In this study, we successfully deposit c-axis oriented aluminum nitride (AlN) piezoelectric films at low temperature (100 °C) via the DC sputtering method with tilt gun. The X-ray diffraction (XRD) observations prove that the deposited films have a c-axis preferred orientation. Effective d33 value of the proposed films is 5.92 pm/V, which is better than most of the reported data using DC sputtering or other processing methods. It is found that the gun placed at 25° helped the films to rearrange at low temperature and c-axis orientation AlN films were successfully grown at 100 °C. This temperature is much lower than the reported growing temperature. It means the piezoelectric films can be deposited at flexible substrate and the photoresist can be stable at this temperature. The cantilever beam type microelectromechanical systems (MEMS) piezoelectric accelerometers are then fabricated based on the proposed AlN films with a lift-off process. The results show that the responsivity of the proposed devices is 8.12 mV/g, and the resonance frequency is 460 Hz, which indicates they can be used for machine tools.
Extracted statement — Film deposition method: DC sputtering method
Research field: Engineering
Title: Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells
Abstract: Two organolead halide perovskite nanocrystals, CH(3)NH(3)PbBr(3) and CH(3)NH(3)PbI(3), were found to efficiently sensitize TiO(2) for visible-light conversion in photoelectrochemical cells. When self-assembled on mesoporous TiO(2) films, the nanocrystalline perovskites exhibit strong band-gap absorptions as semiconductors. The CH(3)NH(3)PbI(3)-based photocell with spectral sensitivity of up to 800 nm yielded a solar energy conversion efficiency of 3.8%. The CH(3)NH(3)PbBr(3)-based cell showed a high photovoltage of 0.96 V with an external quantum conversion efficiency of 65%.
Extracted statement — keywords: Electrochemical Cells
Research field: Engineering
Title: Cylinder-type fiber-optic Vernier probe based on cascaded Fabry–Perot interferometers with a controlled FSR ratio
Abstract: We designed a cylinder-type fiber-optic Vernier probe based on cascaded Fabry-Perot interferometers (FPIs) in this paper. It is fabricated by inserting a short single-mode fiber (SMF) column into a large-aperture hollow-core fiber (LA-HCF) with an internal diameter of 150 µm, which structures a length adjusted air microcavity with the lead-in SMF inserted into the LA-HCF from the other end. The length of the SMF column is 537.9 µm. By adjusting the distance between the SMF column and the lead-in SMF, the spectral change is displayed intuitively, and the Vernier spectra are recorded and analyzed. In sensitivity analysis, the probe is encapsulated in the medical needle by ultraviolet glue as a small body thermometer when the length of the air microcavity is 715.5 µm. The experiment shows that the sensitivity of the Vernier envelope is 12.55 times higher than that of the high-frequency comb. This design can effectively reduce the preparation difficulty of the optical fiber Vernier sensor based on cascaded FPIs, and can expand the applied fields by using different fibers and materials.
Extracted statement — keywords: Fabry-Perot interferometer
Research field: Engineering
Title: Sensitivity-Enhanced Fiber Temperature Sensor Based on Vernier Effect and Dual In-Line Mach–Zehnder Interferometers
Abstract: A highly sensitive fiber temperature sensor based on in-line Mach-Zehnder interferometers (MZIs) and Vernier effect was proposed and experimentally demonstrated. The MZI was fabricated by splicing a section of hollow core fiber between two pieces of multimode fiber. The temperature sensitivity obtained by extracting envelope dip shift of the superimposed spectrum reaches to 528.5 pm/°C in the range of 0 °C–100 °C, which is 17.5 times as high as that without enhanced by the Vernier effect. The experimental sensitivity amplification factor is close to the theoretical predication (18.3 times).The proposed sensitivity enhancement system employs parallel connecting to implement the Vernier effect, which possesses the advantages of easy fabrication and high flexibility.
Extracted statement — keywords: Fiber temperature sensor
Research field: Engineering
Title: Preparation of highly c-axis oriented AlN thin films on Hastelloy tapes with Y2O3 buffer layer for flexible SAW sensor applications
Abstract: Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43nm and its full width at half maximum (FWHM) of the AlN (0002) peak is 12.5∘. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46nm and its FWHM of the AlN (0002) peak is only 3.7∘. The piezoelectric coefficient d33 of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.
Extracted statement — Device type: Flexible SAW sensor
Research field: Engineering
Title: Design and Development of a Flexible Strain Sensor for Textile Structures Based on a Conductive Polymer Composite
Abstract: The aim of this work is to develop a smart flexible sensor adapted to textile structures, able to measure their strain deformations. The sensors are “smart” because of their capacity to adapt to the specific mechanical properties of textile structures that are lightweight, highly flexible, stretchable, elastic, etc. Because of these properties, textile structures are continuously in movement and easily deformed, even under very low stresses. It is therefore important that the integration of a sensor does not modify their general behavior. The material used for the sensor is based on a thermoplastic elastomer (Evoprene)/carbon black nanoparticle composite, and presents general mechanical properties strongly compatible with the textile substrate. Two preparation techniques are investigated: the conventional melt-mixing process, and the solvent process which is found to be more adapted for this particular application. The preparation procedure is fully described, namely the optimization of the process in terms of filler concentration in which the percolation theory aspects have to be considered. The sensor is then integrated on a thin, lightweight Nylon fabric, and the electromechanical characterization is performed to demonstrate the adaptability and the correct functioning of the sensor as a strain gauge on the fabric. A normalized relative resistance is defined in order to characterize the electrical response of the sensor. Finally, the influence of environmental factors, such as temperature and atmospheric humidity, on the sensor performance is investigated. The results show that the sensor's electrical resistance is particularly affected by humidity. This behavior is discussed in terms of the sensitivity of the carbon black filler particles to the presence of water.
Extracted statement — keywords: flexible sensor
Research field: Engineering
Title: A Highly Sensitive Nonenzymatic Glucose Biosensor Based on the Regulatory Effect of Glucose on Electrochemical Behaviors of Colloidal Silver Nanoparticles on MoS2
Abstract: A novel and highly sensitive nonenzymatic glucose biosensor was developed by nucleating colloidal silver nanoparticles (AgNPs) on MoS2. The facile fabrication method, high reproducibility (97.5%) and stability indicates a promising capability for large-scale manufacturing. Additionally, the excellent sensitivity (9044.6 μA·mM−1·cm−2), low detection limit (0.03 μM), appropriate linear range of 0.1–1000 μM, and high selectivity suggests that this biosensor has a great potential to be applied for noninvasive glucose detection in human body fluids, such as sweat and saliva.
Extracted statement — keywords: glucose biosensor
Research field: Engineering
Title: Glucose Biosensor Based on Disposable Activated Carbon Electrodes Modified with Platinum Nanoparticles Electrodeposited on Poly(Azure A)
Abstract: Herein, a novel electrochemical glucose biosensor based on glucose oxidase (GOx) immobilized on a surface containing platinum nanoparticles (PtNPs) electrodeposited on poly(Azure A) (PAA) previously electropolymerized on activated screen-printed carbon electrodes (GOx-PtNPs-PAA-aSPCEs) is reported. The resulting electrochemical biosensor was validated towards glucose oxidation in real samples and further electrochemical measurement associated with the generated H2O2. The electrochemical biosensor showed an excellent sensitivity (42.7 μA mM−1 cm−2), limit of detection (7.6 μM), linear range (20 μM–2.3 mM), and good selectivity towards glucose determination. Furthermore, and most importantly, the detection of glucose was performed at a low potential (0.2 V vs. Ag). The high performance of the electrochemical biosensor was explained through surface exploration using field emission SEM, XPS, and impedance measurements. The electrochemical biosensor was successfully applied to glucose quantification in several real samples (commercial juices and a plant cell culture medium), exhibiting a high accuracy when compared with a classical spectrophotometric method. This electrochemical biosensor can be easily prepared and opens up a good alternative in the development of new sensitive glucose sensors.
Extracted statement — keywords: glucose oxidase
Research field: Engineering
Title: Ultrafast Dynamic Piezoresistive Response of Graphene-Based Cellular Elastomers
Abstract: Ultralight graphene-based cellular elastomers are found to exhibit nearly frequency-independent piezoresistive behaviors. Surpassing the mechanoreceptors in the human skin, these graphene elastomers can provide an instantaneous and high-fidelity electrical response to dynamic pressures ranging from quasi-static up to 2000 Hz, and are capable of detecting ultralow pressures as small as 0.082 Pa.
Extracted statement — keywords: graphene elastomers
Research field: Engineering
Title: Sensitivity-enhanced fiber interferometric high temperature sensor based on Vernier effect
Abstract: A novel sensitivity-enhanced intrinsic fiber Fabry-Perot interferometer (IFFPI) high temperature sensor based on a hollow- core photonic crystal fiber (HC-PCF) and modified Vernier effect is proposed and experimentally demonstrated. The all fiber IFFPIs are easily constructed by splicing one end of the HC-PCF to a leading single mode fiber (SMF) and applying an arc at the other end of the HC-PCF to form a pure silica tip. The modified Vernier effect is formed by three beams of lights reflected from the SMF-PCF splicing joint, and the two air/glass interfaces on the ends of the collapsed HC-PCF tip, respectively. Vernier effect was first applied to high temperature sensing up to 1200°C, in this work, and the experimental results exhibit good stability and repeatability. The temperature sensitivity, measured from the spectrum envelope, is 14 to 57 times higher than that of other configurations using similar HC-PCFs without the Vernier effect. The proposed sensor has the advantages of high sensitivity, good stability, compactness, ease of fabrication, and has potential application in practical high-temperature measurements.
Extracted statement — keywords: High temperature sensor
Research field: Engineering
Title: RF MEMS Switches With Enhanced Power-Handling Capabilities
Abstract: This paper reports on the experimental and theoretical characterization of RF microelectromechanical systems (MEMS) switches for high-power applications. First, we investigate the problem of self-actuation due to high RF power and we demonstrate switches that do not self-actuate or catastrophically fail with a measured RF power of up to 5.5 W. Second, the problem of switch stiction to the down state as a function of the applied RF power is also theoretically and experimentally studied. Finally, a novel switch design with a top electrode is introduced and its advantages related to RF power-handling capabilities are presented. By applying this technology, we demonstrate hot-switching measurements with a maximum power of 0.8 W. Our results, backed by theory and measurements, illustrate that careful design can significantly improve the power-handling capabilities of RF MEMS switches.
Extracted statement — keywords: High-power applications
Research field: Engineering
Title: Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O
            2
            Plasma Treatment
Abstract: The effects of gallium doping into indium–zinc–tin oxide (IZTO) thin film transistors (TFTs) and Ar/O2 plasma treatment on the performance of a‐IZTO TFT are reported. The Ga doping ratio is varied from 0 to 20%, and it is found that 10% gallium doping in a‐IZTO TFT results in a saturation mobility (µsat) of 11.80 cm2 V−1 s−1, a threshold voltage (Vth) of 0.17 V, subthreshold swing (SS) of 94 mV dec−1, and on/off current ratio (Ion/Ioff) of 1.21 × 107. Additionally, the performance of 10% Ga‐doped IZTO TFT can be further improved by Ar/O2 plasma treatment. It is found that 30 s plasma treatment gives the best TFT performances such as µsat of 30.60 cm2 V−1 s−1, Vth of 0.12 V, SS of 92 mV dec−1, and Ion/Ioff ratio of 7.90 × 107. The bias‐stability of 10% Ga‐doped IZTO TFT is also improved by 30 s plasma treatment. The enhancement of the TFT performance appears to be due to the reduction in the oxygen vacancy and OH concentrations.
Extracted statement — Material: Indium–zinc–tin oxide (IZTO) thin film
Research field: Engineering
Title: Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells
Abstract: Device modeling of CH3NH3PbI3−xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefore, applied one-dimensional device simulator widely used in the Cu(In,Ga)Se2 solar cells. A high open-circuit voltage of 1.0 V reported experimentally was successfully reproduced in the simulation, and also other solar cell parameters well consistent with real devices were obtained. In addition, the effect of carrier diffusion length of the absorber and interface defect densities at front and back sides and the optimum thickness of the absorber were analyzed. The results revealed that the diffusion length experimentally reported is long enough for high efficiency, and the defect density at the front interface is critical for high efficiency. Also, the optimum absorber thickness well consistent with the thickness range of real devices was derived.
Extracted statement — keywords: Inorganic Semiconductor
Research field: Engineering
Title: Sensitivity-Enhanced Fiber Temperature Sensor Based on Vernier Effect and Dual In-Line Mach–Zehnder Interferometers
Abstract: A highly sensitive fiber temperature sensor based on in-line Mach-Zehnder interferometers (MZIs) and Vernier effect was proposed and experimentally demonstrated. The MZI was fabricated by splicing a section of hollow core fiber between two pieces of multimode fiber. The temperature sensitivity obtained by extracting envelope dip shift of the superimposed spectrum reaches to 528.5 pm/°C in the range of 0 °C–100 °C, which is 17.5 times as high as that without enhanced by the Vernier effect. The experimental sensitivity amplification factor is close to the theoretical predication (18.3 times).The proposed sensitivity enhancement system employs parallel connecting to implement the Vernier effect, which possesses the advantages of easy fabrication and high flexibility.
Extracted statement — keywords: Mach-Zehnder Interferometer
Research field: Engineering
Title: Highly Sensitive, Transparent, and Durable Pressure Sensors Based on Sea-Urchin Shaped Metal Nanoparticles
Abstract: Highly sensitive, transparent, and durable pressure sensors are fabricated using sea-urchin-shaped metal nanoparticles and insulating polyurethane elastomer. The pressure sensors exhibit outstanding sensitivity (2.46 kPa-1 ), superior optical transmittance (84.8% at 550 nm), fast response/relaxation time (30 ms), and excellent operational durability. In addition, the pressure sensors successfully detect minute movements of human muscles.
Extracted statement — keywords: metal nanoparticles
Research field: Engineering
Title: Highly Sensitive, Transparent, and Durable Pressure Sensors Based on Sea-Urchin Shaped Metal Nanoparticles
Abstract: Highly sensitive, transparent, and durable pressure sensors are fabricated using sea-urchin-shaped metal nanoparticles and insulating polyurethane elastomer. The pressure sensors exhibit outstanding sensitivity (2.46 kPa-1 ), superior optical transmittance (84.8% at 550 nm), fast response/relaxation time (30 ms), and excellent operational durability. In addition, the pressure sensors successfully detect minute movements of human muscles.
Extracted statement — Piezoresistive Material: Metal Nanoparticles
Research field: Engineering
Title: Arrays of Solar-Blind Ultraviolet Photodetector Based on β-Ga2O3 Epitaxial Thin Films
Abstract: Recently, the <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub>-based solar-blind ultraviolet photodetector has attracted intensive attention due to its wide application prospects. Photodetector arrays can act as an imaging detector and also improve the detecting sensitivity by series or parallel of detector cells. In this letter, the highly integrated metal-semiconductor-metal structured photodetector arrays of <inline-formula> <tex-math notation="LaTeX">$32\times 32$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$16\times 16$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$8\times 8$ </tex-math></inline-formula>, and <inline-formula> <tex-math notation="LaTeX">$4\times 4$ </tex-math></inline-formula> have been designed and fabricated for the first time. Herein, we present a 4-1 photodetector cell chosen from a <inline-formula> <tex-math notation="LaTeX">$4\times 4$ </tex-math></inline-formula> photodetector array as an example to demonstrate the performance. The photo responsivity is <inline-formula> <tex-math notation="LaTeX">$8.926 \times 10^{-1}$ </tex-math></inline-formula> A/W @ 250 nm at a 10-V bias voltage, corresponding to a quantum efficiency of 444%. All of the photodetector cells exhibit the solar-blind ultraviolet photoelectric characteristic and the consistent photo responsivity with a standard deviation of 12.1%. The outcome of the study offers an efficient route toward the development of high-performance and low-cost DUV photodetector arrays.
Extracted statement — keywords: Metal-semiconductor-metal structure
Research field: Engineering
Title: High-isolation CPW MEMS shunt switches-part 1: modeling 
Abstract: This paper, the first of two parts, presents an electromagnetic model for membrane microelectromechanical systems (MEMS) shunt switches for microwave/millimeter-wave applications. The up-state capacitance can be accurately modeled using three-dimensional static solvers, and full-wave solvers are used to predict the current distribution and inductance of the switch. The loss in the up-state position is equivalent to the coplanar waveguide line loss and is 0.01-0.02 dB at 10-30 GHz for a 2-/spl mu/m-thick Au MEMS shunt switch. It is seen that the capacitance, inductance, and series resistance can be accurately extracted from DC-40 GHz S-parameter measurements. It is also shown that dramatic increase in the down-state isolation (20/sup +/ dB) can be achieved with the choice of the correct LC series resonant frequency of the switch. In part 2 of this paper, the equivalent capacitor-inductor-resistor model is used in the design of tuned high isolation switches at 10 and 30 GHz.
Extracted statement — keywords: Microelectromechanical systems