Moussab/ORKG-training-evaluation-set huggingface dataset:
Research field: Semiconductor and Optical Materials
Title: Dismantling the “Red Wall” of Colloidal Perovskites: Highly Luminescent Formamidinium and Formamidinium–Cesium Lead Iodide Nanocrystals
Abstract: Colloidal nanocrystals (NCs) of APbX3-type lead halide perovskites [A = Cs+, CH3NH3+ (methylammonium or MA+) or CH(NH2)2+ (formamidinium or FA+); X = Cl–, Br–, I–] have recently emerged as highly versatile photonic sources for applications ranging from simple photoluminescence down-conversion (e.g., for display backlighting) to light-emitting diodes. From the perspective of spectral coverage, a formidable challenge facing the use of these materials is how to obtain stable emissions in the red and infrared spectral regions covered by the iodide-based compositions. So far, red-emissive CsPbI3 NCs have been shown to suffer from a delayed phase transformation into a nonluminescent, wide-band-gap 1D polymorph, and MAPbI3 exhibits very limited chemical durability. In this work, we report a facile colloidal synthesis method for obtaining FAPbI3 and FA-doped CsPbI3 NCs that are uniform in size (10–15 nm) and nearly cubic in shape and exhibit drastically higher robustness than their MA- or Cs-only cousins with similar sizes and morphologies. Detailed structural analysis indicated that the FAPbI3 NCs had a cubic crystal structure, while the FA0.1Cs0.9PbI3 NCs had a 3D orthorhombic structure that was isostructural to the structure of CsPbBr3 NCs. Bright photoluminescence (PL) with high quantum yield (QY > 70%) spanning red (690 nm, FA0.1Cs0.9PbI3 NCs) and near-infrared (near-IR, ca. 780 nm, FAPbI3 NCs) regions was sustained for several months or more in both the colloidal state and in films. The peak PL wavelengths can be fine-tuned by using postsynthetic cation- and anion-exchange reactions. Amplified spontaneous emissions with low thresholds of 28 and 7.5 μJ cm–2 were obtained from the films deposited from FA0.1Cs0.9PbI3 and FAPbI3 NCs, respectively. Furthermore, light-emitting diodes with a high external quantum efficiency of 2.3% were obtained by using FAPbI3 NCs.
Extracted statement — Material: red and infrared spectral regions
Research field: Semiconductor and Optical Materials
Title: Dismantling the “Red Wall” of Colloidal Perovskites: Highly Luminescent Formamidinium and Formamidinium–Cesium Lead Iodide Nanocrystals
Abstract: Colloidal nanocrystals (NCs) of APbX3-type lead halide perovskites [A = Cs+, CH3NH3+ (methylammonium or MA+) or CH(NH2)2+ (formamidinium or FA+); X = Cl–, Br–, I–] have recently emerged as highly versatile photonic sources for applications ranging from simple photoluminescence down-conversion (e.g., for display backlighting) to light-emitting diodes. From the perspective of spectral coverage, a formidable challenge facing the use of these materials is how to obtain stable emissions in the red and infrared spectral regions covered by the iodide-based compositions. So far, red-emissive CsPbI3 NCs have been shown to suffer from a delayed phase transformation into a nonluminescent, wide-band-gap 1D polymorph, and MAPbI3 exhibits very limited chemical durability. In this work, we report a facile colloidal synthesis method for obtaining FAPbI3 and FA-doped CsPbI3 NCs that are uniform in size (10–15 nm) and nearly cubic in shape and exhibit drastically higher robustness than their MA- or Cs-only cousins with similar sizes and morphologies. Detailed structural analysis indicated that the FAPbI3 NCs had a cubic crystal structure, while the FA0.1Cs0.9PbI3 NCs had a 3D orthorhombic structure that was isostructural to the structure of CsPbBr3 NCs. Bright photoluminescence (PL) with high quantum yield (QY > 70%) spanning red (690 nm, FA0.1Cs0.9PbI3 NCs) and near-infrared (near-IR, ca. 780 nm, FAPbI3 NCs) regions was sustained for several months or more in both the colloidal state and in films. The peak PL wavelengths can be fine-tuned by using postsynthetic cation- and anion-exchange reactions. Amplified spontaneous emissions with low thresholds of 28 and 7.5 μJ cm–2 were obtained from the films deposited from FA0.1Cs0.9PbI3 and FAPbI3 NCs, respectively. Furthermore, light-emitting diodes with a high external quantum efficiency of 2.3% were obtained by using FAPbI3 NCs.
Extracted statement — Material: red-emissive CsPbI3 NCs
Research field: Semiconductor and Optical Materials
Title: Dismantling the “Red Wall” of Colloidal Perovskites: Highly Luminescent Formamidinium and Formamidinium–Cesium Lead Iodide Nanocrystals
Abstract: Colloidal nanocrystals (NCs) of APbX3-type lead halide perovskites [A = Cs+, CH3NH3+ (methylammonium or MA+) or CH(NH2)2+ (formamidinium or FA+); X = Cl–, Br–, I–] have recently emerged as highly versatile photonic sources for applications ranging from simple photoluminescence down-conversion (e.g., for display backlighting) to light-emitting diodes. From the perspective of spectral coverage, a formidable challenge facing the use of these materials is how to obtain stable emissions in the red and infrared spectral regions covered by the iodide-based compositions. So far, red-emissive CsPbI3 NCs have been shown to suffer from a delayed phase transformation into a nonluminescent, wide-band-gap 1D polymorph, and MAPbI3 exhibits very limited chemical durability. In this work, we report a facile colloidal synthesis method for obtaining FAPbI3 and FA-doped CsPbI3 NCs that are uniform in size (10–15 nm) and nearly cubic in shape and exhibit drastically higher robustness than their MA- or Cs-only cousins with similar sizes and morphologies. Detailed structural analysis indicated that the FAPbI3 NCs had a cubic crystal structure, while the FA0.1Cs0.9PbI3 NCs had a 3D orthorhombic structure that was isostructural to the structure of CsPbBr3 NCs. Bright photoluminescence (PL) with high quantum yield (QY > 70%) spanning red (690 nm, FA0.1Cs0.9PbI3 NCs) and near-infrared (near-IR, ca. 780 nm, FAPbI3 NCs) regions was sustained for several months or more in both the colloidal state and in films. The peak PL wavelengths can be fine-tuned by using postsynthetic cation- and anion-exchange reactions. Amplified spontaneous emissions with low thresholds of 28 and 7.5 μJ cm–2 were obtained from the films deposited from FA0.1Cs0.9PbI3 and FAPbI3 NCs, respectively. Furthermore, light-emitting diodes with a high external quantum efficiency of 2.3% were obtained by using FAPbI3 NCs.
Extracted statement — Data: similar sizes and morphologies
Research field: Semiconductor and Optical Materials
Title: Thin-Film Solar Cells with 19% Efficiency by Thermal Evaporation of CdSe and CdTe
Abstract: CdTe-based solar cells exhibiting 19% power conversion efficiency were produced using widely available thermal evaporation deposition of the absorber layers on SnO2-coated glass with or without a t...
Extracted statement — substrate: SnO2-coated glass
Research field: Semiconductor and Optical Materials
Title: Thin-Film Solar Cells with 19% Efficiency by Thermal Evaporation of CdSe and CdTe
Abstract: CdTe-based solar cells exhibiting 19% power conversion efficiency were produced using widely available thermal evaporation deposition of the absorber layers on SnO2-coated glass with or without a t...
Extracted statement — keywords: Solar cells
Research field: Semiconductor and Optical Materials
Title: Interfacial Control Toward Efficient and Low-Voltage Perovskite Light-Emitting Diodes
Abstract: High-performance perovskite light-emitting diodes are achieved by an interfacial engineering approach, leading to the most efficient near-infrared devices produced using solution-processed emitters and efficient green devices at high brightness conditions.
Extracted statement — Material: solution-processed emitters
Research field: Semiconductor and Optical Materials
Title: Dismantling the “Red Wall” of Colloidal Perovskites: Highly Luminescent Formamidinium and Formamidinium–Cesium Lead Iodide Nanocrystals
Abstract: Colloidal nanocrystals (NCs) of APbX3-type lead halide perovskites [A = Cs+, CH3NH3+ (methylammonium or MA+) or CH(NH2)2+ (formamidinium or FA+); X = Cl–, Br–, I–] have recently emerged as highly versatile photonic sources for applications ranging from simple photoluminescence down-conversion (e.g., for display backlighting) to light-emitting diodes. From the perspective of spectral coverage, a formidable challenge facing the use of these materials is how to obtain stable emissions in the red and infrared spectral regions covered by the iodide-based compositions. So far, red-emissive CsPbI3 NCs have been shown to suffer from a delayed phase transformation into a nonluminescent, wide-band-gap 1D polymorph, and MAPbI3 exhibits very limited chemical durability. In this work, we report a facile colloidal synthesis method for obtaining FAPbI3 and FA-doped CsPbI3 NCs that are uniform in size (10–15 nm) and nearly cubic in shape and exhibit drastically higher robustness than their MA- or Cs-only cousins with similar sizes and morphologies. Detailed structural analysis indicated that the FAPbI3 NCs had a cubic crystal structure, while the FA0.1Cs0.9PbI3 NCs had a 3D orthorhombic structure that was isostructural to the structure of CsPbBr3 NCs. Bright photoluminescence (PL) with high quantum yield (QY > 70%) spanning red (690 nm, FA0.1Cs0.9PbI3 NCs) and near-infrared (near-IR, ca. 780 nm, FAPbI3 NCs) regions was sustained for several months or more in both the colloidal state and in films. The peak PL wavelengths can be fine-tuned by using postsynthetic cation- and anion-exchange reactions. Amplified spontaneous emissions with low thresholds of 28 and 7.5 μJ cm–2 were obtained from the films deposited from FA0.1Cs0.9PbI3 and FAPbI3 NCs, respectively. Furthermore, light-emitting diodes with a high external quantum efficiency of 2.3% were obtained by using FAPbI3 NCs.
Extracted statement — Data: uniform in size (10–15 nm)
Research field: Semiconductor and Optical Materials
Title: Bright Visible-Infrared Light Emitting Diodes Based on Hybrid Halide Perovskite with Spiro-OMeTAD as a Hole-Injecting Layer
Abstract: Hybrid halide perovskites that are currently intensively studied for photovoltaic applications, also present outstanding properties for light emission. Here, we report on the preparation of bright solid state light emitting diodes (LEDs) based on a solution-processed hybrid lead halide perovskite (Pe). In particular, we have utilized the perovskite generally described with the formula CH3NH3PbI(3-x)Cl(x) and exploited a configuration without electron or hole blocking layer in addition to the injecting layers. Compact TiO2 and Spiro-OMeTAD were used as electron and hole injecting layers, respectively. We have demonstrated a bright combined visible-infrared radiance of 7.1 W·sr(-1)·m(-2) at a current density of 232 mA·cm(-2), and a maximum external quantum efficiency (EQE) of 0.48%. The devices prepared surpass the EQE values achieved in previous reports, considering devices with just an injecting layer without any additional blocking layer. Significantly, the maximum EQE value of our devices is obtained at applied voltages as low as 2 V, with a turn-on voltage as low as the Pe band gap (V(turn-on) = 1.45 ± 0.06 V). This outstanding performance, despite the simplicity of the approach, highlights the enormous potentiality of Pe-LEDs. In addition, we present a stability study of unsealed Pe-LEDs, which demonstrates a dramatic influence of the measurement atmosphere on the performance of the devices. The decrease of the electroluminescence (EL) under continuous operation can be attributed to an increase of the non-radiative recombination pathways, rather than a degradation of the perovskite material itself.
Extracted statement — Material: unsealed Pe-LEDs
Research field: Semiconductor and Optical Materials
Title: Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient
Abstract: In this work, pure and IIIA element doped ZnO thin films were grown on p type silicon (Si) with (100) orientated surface by sol-gel method, and were characterized for comparing their electrical characteristics. The heterojunction parameters were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics at room temperature. The ideality factor (n), saturation current (Io) and junction resistance of ZnO/p-Si heterojunction for both pure and doped (with Al or In) cases were determined by using different methods at room ambient. Other electrical parameters such as Fermi energy level (EF), barrier height (ΦB), acceptor concentration (Na), built-in potential (Φi) and voltage dependence of surface states (Nss) profile were obtained from the C-V measurements. The results reveal that doping ZnO with IIIA (Al or In) elements to fabricate n-ZnO/p-Si heterojunction can result in high performance diode characteristics.
Extracted statement — keywords: ZnO Thin film
Research field: Social and Behavioral Sciences
Title: Everything in moderation: ICT and reading performance of Dutch 15-year-olds
Abstract: Abstract Previous research on the relationship between students’ home and school Information and Communication Technology (ICT) resources and academic performance has shown ambiguous results. The availability of ICT resources at school has been found to be unrelated or negatively related to academic performance, whereas the availability of ICT resources at home has been found to be both positively and negatively related to academic performance. In addition, the frequency of use of ICT is related to students’ academic achievement. This relationship has been found to be negative for ICT use at school, however, for ICT use at home the literature on the relationship with academic performance is again ambiguous. In addition to ICT availability and ICT use, students’ attitudes towards ICT have also been found to play a role in student performance. In the present study, we examine how availability of ICT resources, students’ use of those resources (at school, outside school for schoolwork, outside school for leisure), and students’ attitudes toward ICT (interest in ICT, perceived ICT competence, perceived ICT autonomy) relate to individual differences in performance on a digital assessment of reading in one comprehensive model using the Dutch PISA 2015 sample of 5183 15-year-olds (49.2% male). Student gender and students’ economic, social, and cultural status accounted for a substantial part of the variation in digitally assessed reading performance. Controlling for these relationships, results indicated that students with moderate access to ICT resources, moderate use of ICT at school or outside school for schoolwork, and moderate interest in ICT had the highest digitally assessed reading performance. In contrast, students who reported moderate competence in ICT had the lowest digitally assessed reading performance. In addition, frequent use of ICT outside school for leisure was negatively related to digitally assessed reading performance, whereas perceived autonomy was positively related. Taken together, the findings suggest that excessive access to ICT resources, excessive use of ICT, and excessive interest in ICT is associated with lower digitally assessed reading performance.
Extracted statement — includes: ICT autonomy
Research field: Social and Behavioral Sciences
Title: Everything in moderation: ICT and reading performance of Dutch 15-year-olds
Abstract: Abstract Previous research on the relationship between students’ home and school Information and Communication Technology (ICT) resources and academic performance has shown ambiguous results. The availability of ICT resources at school has been found to be unrelated or negatively related to academic performance, whereas the availability of ICT resources at home has been found to be both positively and negatively related to academic performance. In addition, the frequency of use of ICT is related to students’ academic achievement. This relationship has been found to be negative for ICT use at school, however, for ICT use at home the literature on the relationship with academic performance is again ambiguous. In addition to ICT availability and ICT use, students’ attitudes towards ICT have also been found to play a role in student performance. In the present study, we examine how availability of ICT resources, students’ use of those resources (at school, outside school for schoolwork, outside school for leisure), and students’ attitudes toward ICT (interest in ICT, perceived ICT competence, perceived ICT autonomy) relate to individual differences in performance on a digital assessment of reading in one comprehensive model using the Dutch PISA 2015 sample of 5183 15-year-olds (49.2% male). Student gender and students’ economic, social, and cultural status accounted for a substantial part of the variation in digitally assessed reading performance. Controlling for these relationships, results indicated that students with moderate access to ICT resources, moderate use of ICT at school or outside school for schoolwork, and moderate interest in ICT had the highest digitally assessed reading performance. In contrast, students who reported moderate competence in ICT had the lowest digitally assessed reading performance. In addition, frequent use of ICT outside school for leisure was negatively related to digitally assessed reading performance, whereas perceived autonomy was positively related. Taken together, the findings suggest that excessive access to ICT resources, excessive use of ICT, and excessive interest in ICT is associated with lower digitally assessed reading performance.
Extracted statement — includes: ICT competence
Research field: Social and Behavioral Sciences
Title: ICT Engagement: a new construct and its assessment in PISA 2015
Abstract: Abstract As a relevant cognitive-motivational aspect of ICT literacy, a new construct ICT Engagement is theoretically based on self-determination theory and involves the factors ICT interest, Perceived ICT competence, Perceived autonomy related to ICT use, and ICT as a topic in social interaction. In this manuscript, we present different sources of validity supporting the construct interpretation of test scores in the ICT Engagement scale, which was used in PISA 2015. Specifically, we investigated the internal structure by dimensional analyses and investigated the relation of ICT Engagement aspects to other variables. The analyses are based on public data from PISA 2015 main study from Switzerland ( n = 5860) and Germany ( n = 6504). First, we could confirm the four-dimensional structure of ICT Engagement for the Swiss sample using a structural equation modelling approach. Second, ICT Engagement scales explained the highest amount of variance in ICT Use for Entertainment, followed by Practical use. Third, we found significantly lower values for girls in all ICT Engagement scales except ICT Interest. Fourth, we found a small negative correlation between the scores in the subscale “ICT as a topic in social interaction” and reading performance in PISA 2015. We could replicate most results for the German sample. Overall, the obtained results support the construct interpretation of the four ICT Engagement subscales.
Extracted statement — includes: ICT competence
Research field: Social and Behavioral Sciences
Title: A PISA-2015 Comparative Meta-Analysis between Singapore and Finland: Relations of Students’ Interest in Science, Perceived ICT Competence, and Environmental Awareness and Optimism
Abstract: <jats:p>The aim of the present study is twofold: (1) to identify a factor structure between variables-interest in broad science topics, perceived information and communications technology (ICT) competence, environmental awareness and optimism; and (2) to explore the relations between these variables at the country level. The first part of the aim is addressed using exploratory factor analysis with data from the Program for International Student Assessment (PISA) for 15-year-old students from Singapore and Finland. The results show that a comparable structure with four factors was verified in both countries. Correlation analyses and linear regression were used to address the second part of the aim. The results show that adolescents’ interest in broad science topics can predict perceived ICT competence. Their interest in broad science topics and perceived ICT competence can predict environmental awareness in both countries. However, there is difference in predicting environmental optimism. Singaporean students’ interest in broad science topics and their perceived ICT competences are positive predictors, whereas environmental awareness is a negative predictor. Finnish students’ environmental awareness negatively predicted environmental optimism.</jats:p>
Extracted statement — includes: ICT competence
Research field: Social and Behavioral Sciences
Title: Measurement invariance of the ICT engagement construct and its association with students’ performance in China and Germany: Evidence from PISA 2015 data
Abstract: The present study investigated the factor structure of and measurement invariance in the information and communication technology (ICT) engagement construct, and the relationship between ICT engagement and students' performance on science, mathematics and reading in China and Germany. Samples were derived from the Programme for International Student Assessment (PISA) 2015 survey. Configural, metric and scalar equivalence were found in a multigroup exploratory structural equation model. In the regression model, a significantly positive association between interest in ICT and student achievement was found in China, in contrast to a significantly negative association in Germany. All achievement scores were negatively and significantly correlated with perceived ICT competence scores in China, whereas science and mathematics achievement scores were not predicted by scores on ICT competence in Germany. Similar patterns were found in China and Germany in terms of perceived autonomy in using ICT and social relatedness in using ICT to predict students' achievement. The implications of all the findings were discussed. [ABSTRACT FROM AUTHOR]
Extracted statement — includes: ICT competence
Research field: Social and Behavioral Sciences
Title: ICT Engagement: a new construct and its assessment in PISA 2015
Abstract: Abstract As a relevant cognitive-motivational aspect of ICT literacy, a new construct ICT Engagement is theoretically based on self-determination theory and involves the factors ICT interest, Perceived ICT competence, Perceived autonomy related to ICT use, and ICT as a topic in social interaction. In this manuscript, we present different sources of validity supporting the construct interpretation of test scores in the ICT Engagement scale, which was used in PISA 2015. Specifically, we investigated the internal structure by dimensional analyses and investigated the relation of ICT Engagement aspects to other variables. The analyses are based on public data from PISA 2015 main study from Switzerland ( n = 5860) and Germany ( n = 6504). First, we could confirm the four-dimensional structure of ICT Engagement for the Swiss sample using a structural equation modelling approach. Second, ICT Engagement scales explained the highest amount of variance in ICT Use for Entertainment, followed by Practical use. Third, we found significantly lower values for girls in all ICT Engagement scales except ICT Interest. Fourth, we found a small negative correlation between the scores in the subscale “ICT as a topic in social interaction” and reading performance in PISA 2015. We could replicate most results for the German sample. Overall, the obtained results support the construct interpretation of the four ICT Engagement subscales.
Extracted statement — includes: ICT interest