Please select the most similar patent number from A, B, C and D. Which number is?
The present invention relates to the field of piezoelectric transducers, and provides a transducer. The transducer comprises a first wafer (100) and a second wafer (200); the first wafer (100) and the second wafer (200) each comprise a substrate (110, 210), a first oxide layer (105, 205) fixed to one side of the substrate (110, 210), a metal layer (114, 214) fixed to the other side of the substrate (110, 210), and a silicon nitride layer (104, 204), a first electrode (103, 203), a piezoelectric layer (102, 202), and a second electrode (101, 201) which are sequentially deposited on the first oxide layer (105, 205); the substrate (110, 210) comprises a first silicon layer (111, 211), a second silicon layer (113, 213), and a second oxide layer (112, 212) sandwiched between the first silicon layer (111, 211) and the second silicon layer (113, 213); the metal layer (114) of the first wafer (100) and the metal layer (214) of the second wafer (200) are fixedly connected; the first wafer (100) is provided with a cavity (122) and gaps (121, 123); and the second wafer (200) is provided with a cavity (222), a first gap (221), and a second gap (223). Moreover, the present invention further provides a manufacturing method for the transducer. Compared with the prior art, by designing the two wafers, SPL is increased by two times, and the structural stability is improved.
A: A method for producing a MEMS drive, comprising: providing a wafer substrate (10) having a first oxide layer (12) as well as a first silicon layer (11) and a second silicon layer (13) respectively deposited on opposite surfaces of the first oxide layer (12); after depositing to form a second oxide layer (20) on the surface of the second silicon layer (13), element-doping the first silicon layer (11) to form a doped region (30) spaced from the first oxide layer (12); and depositing a third oxide layer (40) on the surface of the first silicon layer (11), and etching the third oxide layer (40) to form a first oxidation structure (41) at the edge, the first oxidation structure (41) enclosing a first cavity (A). According to the method for producing a MEMS drive, the MEMS drive can be made by processing an existing silicon wafer using a classic wafer producing method, so that the bonding process and the micro-assembly process are canceled, thus simplifying the entire MEMS actuator producing process.
B: A chip substrate, a sequencing chip, and a manufacturing method therefor. The chip substrate comprises: a wafer layer (111), the wafer layer (111) having uniformly distributed cutting lines; a first silicon oxide layer (112), the first silicon oxide layer (112) being composed of silicon oxide and formed on the upper surface of the wafer layer (111); and a transition metal oxide layer (113), the transition metal oxide layer (113) being composed of transition metal oxide and formed on the upper surface of the first silicon oxide layer (112). The chip substrate has the characteristics of harsh environment resistance such as high temperature resistance and high humidity resistance. Moreover, by changing components such as the pH of a solution containing a sequence to be sequenced and a surfactant, a functional area of the surface of the chip substrate can specifically adsorb the sequence to be sequenced.
C: Provided in the present invention is a sequencing chip. The sequencing chip comprises: a chip main body, a nucleic acid, and a phosphonic acid polymer film, wherein the chip main body comprises a plurality of chip units arranged on a same layer, said chip units are obtained via performing cutting on a chip matrix along cutting lines of a wafer layer, and said chip matrix comprises: the wafer layer, said wafer layer having uniformly distributed cutting lines; a first silicon oxide layer, the first silicon oxide layer being made up of silicon oxide and formed on an upper surface of the wafer layer; a transition metal oxide layer, said transition metal oxide layer being made up of a transition metal oxide and formed on an upper surface of the first silicon oxide layer; the nucleic acid is fixed on the transition metal oxide layer; and the phosphonic acid polymer film is made up of a polyphosphonic acid polymer and formed on an upper face of the transition metal oxide layer.
D: Provided are an ultrasonic transducer preparation method, an ultrasonic transducer and an information acquisition element. The method comprises: forming a first electrode on a substrate layer; forming a passivation protection layer on a first surface of the first electrode; forming a circuit layer on a first surface of the passivation protection layer; removing the substrate layer; forming a piezoelectric layer on a second surface of the first electrode; and forming a second electrode on a first surface of the piezoelectric layer. Due to the fact that the substrate layer is removed, the thickness of the ultrasonic transducer is small, and the ultrasonic transducer can be suitable for a scenario where an ultrathin ultrasonic transducer is needed. An effective device structure layer through which ultrasonic signals generated by the ultrasonic transducer pass during propagation does not comprise a substrate layer, such that energy loss caused by the ultrasonic signals penetrating the substrate layer is prevented, and the ultrasonic performance of the ultrasonic transducer is better.
Answer: D