フェデリコ・ファジン
Faggin, F., Klein, T., and Vadasz, L. :"Insulated Gate Field Effect Transistor Integrated Circuits with Silicon Gates", Federico Faggin presented the Silicon Gate Technology he developed at Fairchild at the IEEE International Electron Device Meeting. Washington, D.C., 1968年10月
Federico Faggin and Thomas Klein.: "A Faster Generation of MOS Devices with Low Thresholds is Riding the Crest of the New Wave, Silicon-Gate IC's". The cover features the Fairchild 3708, the world's first commercial integrated circuit using Silicon Gate Technology, designed by Federico Faggin at Fairchild in 1968."Electronics", 1969年9月29日
F. Faggin, T. Klein: "Silicon-Gate Technology". "Solid State Electronics", 1970年, Vo. 13, pp. 1125-1144