yz2022/T2P-DownstreamNLP huggingface dataset:
Light-emitting_diode

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD.

Question: How many companies did a judge say infringed on Dr. Moustakas's prior blue light patent in 2015?
Answer: three
Light-emitting_diode

With nitrides containing aluminium, most often AlGaN and AlGaInN, even shorter wavelengths are achievable. Ultraviolet LEDs in a range of wavelengths are becoming available on the market. Near-UV emitters at wavelengths around 375–395 nm are already cheap and often encountered, for example, as black light lamp replacements for inspection of anti-counterfeiting UV watermarks in some documents and paper currencies. Shorter-wavelength diodes, while substantially more expensive, are commercially available for wavelengths down to 240 nm. As the photosensitivity of microorganisms approximately matches the absorption spectrum of DNA, with a peak at about 260 nm, UV LED emitting at 250–270 nm are to be expected in prospective disinfection and sterilization devices. Recent research has shown that commercially available UVA LEDs (365 nm) are already effective disinfection and sterilization devices. UV-C wavelengths were obtained in laboratories using aluminium nitride (210 nm), boron nitride (215 nm) and diamond (235 nm).

Question: What substance does nitrides contain?
Answer: aluminium

Question: What sort of LEDs are becoming more available on the market?
Answer: Ultraviolet
Light-emitting_diode

Phosphor-based LED efficiency losses are due to the heat loss from the Stokes shift and also other phosphor-related degradation issues. Their luminous efficacies compared to normal LEDs depend on the spectral distribution of the resultant light output and the original wavelength of the LED itself. For example, the luminous efficacy of a typical YAG yellow phosphor based white LED ranges from 3 to 5 times the luminous efficacy of the original blue LED because of the human eye's greater sensitivity to yellow than to blue (as modeled in the luminosity function). Due to the simplicity of manufacturing the phosphor method is still the most popular method for making high-intensity white LEDs. The design and production of a light source or light fixture using a monochrome emitter with phosphor conversion is simpler and cheaper than a complex RGB system, and the majority of high-intensity white LEDs presently on the market are manufactured using phosphor light conversion.

Question: Why is efficiency sometimes lost in phosphor-based LEDs?
Answer: heat loss from the Stokes shift
Light-emitting_diode

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).

Question: Who demonstrated the first blue LED?
Answer: Shuji Nakamura

Question: What color LED was demonstrated in 1994?
Answer: blue
Light-emitting_diode

Quantum dots (QD) are semiconductor nanocrystals that possess unique optical properties. Their emission color can be tuned from the visible throughout the infrared spectrum. This allows quantum dot LEDs to create almost any color on the CIE diagram. This provides more color options and better color rendering than white LEDs since the emission spectrum is much narrower, characteristic of quantum confined states. There are two types of schemes for QD excitation. One uses photo excitation with a primary light source LED (typically blue or UV LEDs are used). The other is direct electrical excitation first demonstrated by Alivisatos et al.

Question: How many types of schemes are there in Quantum Dot LED excitation?
Answer: two

Question: What nanocrystals possess unique optical properties?
Answer: Quantum dots
Light-emitting_diode

Among the challenges being faced to improve the efficiency of LED-based white light sources is the development of more efficient phosphors. As of 2010, the most efficient yellow phosphor is still the YAG phosphor, with less than 10% Stoke shift loss. Losses attributable to internal optical losses due to re-absorption in the LED chip and in the LED packaging itself account typically for another 10% to 30% of efficiency loss. Currently, in the area of phosphor LED development, much effort is being spent on optimizing these devices to higher light output and higher operation temperatures. For instance, the efficiency can be raised by adapting better package design or by using a more suitable type of phosphor. Conformal coating process is frequently used to address the issue of varying phosphor thickness.

Question: What can improve the efficiency of LED-based white light?
Answer: more efficient phosphors
Light-emitting_diode

In September 1961, while working at Texas Instruments in Dallas, Texas, James R. Biard and Gary Pittman discovered near-infrared (900 nm) light emission from a tunnel diode they had constructed on a GaAs substrate. By October 1961, they had demonstrated efficient light emission and signal coupling between a GaAs p-n junction light emitter and an electrically-isolated semiconductor photodetector. On August 8, 1962, Biard and Pittman filed a patent titled "Semiconductor Radiant Diode" based on their findings, which described a zinc diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias. After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the patent for the GaAs infrared (IR) light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first LED commercial product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110.

Question: In what year was the patent filed for the Semiconductor Radiant Diode?
Answer: 1962
Light-emitting_diode

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).

Question: What did Nakamura, Akasaki, and Amano receive for their work?
Answer: 2014 Nobel prize in physics
Light-emitting_diode

Among the challenges being faced to improve the efficiency of LED-based white light sources is the development of more efficient phosphors. As of 2010, the most efficient yellow phosphor is still the YAG phosphor, with less than 10% Stoke shift loss. Losses attributable to internal optical losses due to re-absorption in the LED chip and in the LED packaging itself account typically for another 10% to 30% of efficiency loss. Currently, in the area of phosphor LED development, much effort is being spent on optimizing these devices to higher light output and higher operation temperatures. For instance, the efficiency can be raised by adapting better package design or by using a more suitable type of phosphor. Conformal coating process is frequently used to address the issue of varying phosphor thickness.

Question: What is the most efficient yellow phosphor?
Answer: YAG phosphor

Question: What is one method that can raise the efficiency of phosphor-based LEDs?
Answer: adapting better package design
Light-emitting_diode

In September 1961, while working at Texas Instruments in Dallas, Texas, James R. Biard and Gary Pittman discovered near-infrared (900 nm) light emission from a tunnel diode they had constructed on a GaAs substrate. By October 1961, they had demonstrated efficient light emission and signal coupling between a GaAs p-n junction light emitter and an electrically-isolated semiconductor photodetector. On August 8, 1962, Biard and Pittman filed a patent titled "Semiconductor Radiant Diode" based on their findings, which described a zinc diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias. After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the patent for the GaAs infrared (IR) light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first LED commercial product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110.

Question: The two inventors of the first practical diode were employed by what famous company?
Answer: Texas Instruments (TI)
Light-emitting_diode

White LEDs can also be made by coating near-ultraviolet (NUV) LEDs with a mixture of high-efficiency europium-based phosphors that emit red and blue, plus copper and aluminium-doped zinc sulfide (ZnS:Cu, Al) that emits green. This is a method analogous to the way fluorescent lamps work. This method is less efficient than blue LEDs with YAG:Ce phosphor, as the Stokes shift is larger, so more energy is converted to heat, but yields light with better spectral characteristics, which render color better. Due to the higher radiative output of the ultraviolet LEDs than of the blue ones, both methods offer comparable brightness. A concern is that UV light may leak from a malfunctioning light source and cause harm to human eyes or skin.

Question: What are near-ultraviolet LEDs coated with to create white LED?
Answer: copper and aluminium-doped zinc sulfide (ZnS:Cu, Al)
Light-emitting_diode

Quantum dots (QD) are semiconductor nanocrystals that possess unique optical properties. Their emission color can be tuned from the visible throughout the infrared spectrum. This allows quantum dot LEDs to create almost any color on the CIE diagram. This provides more color options and better color rendering than white LEDs since the emission spectrum is much narrower, characteristic of quantum confined states. There are two types of schemes for QD excitation. One uses photo excitation with a primary light source LED (typically blue or UV LEDs are used). The other is direct electrical excitation first demonstrated by Alivisatos et al.

Question: The narrowing of the emission spectrum in Quantum Dot LEDs allows them to do what?
Answer: better color rendering
Light-emitting_diode

In September 1961, while working at Texas Instruments in Dallas, Texas, James R. Biard and Gary Pittman discovered near-infrared (900 nm) light emission from a tunnel diode they had constructed on a GaAs substrate. By October 1961, they had demonstrated efficient light emission and signal coupling between a GaAs p-n junction light emitter and an electrically-isolated semiconductor photodetector. On August 8, 1962, Biard and Pittman filed a patent titled "Semiconductor Radiant Diode" based on their findings, which described a zinc diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias. After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the patent for the GaAs infrared (IR) light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first LED commercial product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110.

Question: What was the first practical LED?
Answer: GaAs infrared (IR) light-emitting diode
Light-emitting_diode

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).

Question: Who investigated the efficiency of high-brightness LED at Cardiff University in 1995?
Answer: Alberto Barbieri

Question: What substance did Barbieri use in his work with high-brightness LED?
Answer: indium tin oxide
Light-emitting_diode

In September 1961, while working at Texas Instruments in Dallas, Texas, James R. Biard and Gary Pittman discovered near-infrared (900 nm) light emission from a tunnel diode they had constructed on a GaAs substrate. By October 1961, they had demonstrated efficient light emission and signal coupling between a GaAs p-n junction light emitter and an electrically-isolated semiconductor photodetector. On August 8, 1962, Biard and Pittman filed a patent titled "Semiconductor Radiant Diode" based on their findings, which described a zinc diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias. After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the patent for the GaAs infrared (IR) light-emitting diode (U.S. Patent US3293513), the first practical LED. Immediately after filing the patent, Texas Instruments (TI) began a project to manufacture infrared diodes. In October 1962, TI announced the first LED commercial product (the SNX-100), which employed a pure GaAs crystal to emit a 890 nm light output. In October 1963, TI announced the first commercial hemispherical LED, the SNX-110.

Question: What type of diode was used to help discover near-infrared light emission?
Answer: tunnel
Light-emitting_diode

The vast majority of devices containing LEDs are "safe under all conditions of normal use", and so are classified as "Class 1 LED product"/"LED Klasse 1". At present, only a few LEDs—extremely bright LEDs that also have a tightly focused viewing angle of 8° or less—could, in theory, cause temporary blindness, and so are classified as "Class 2". The opinion of the French Agency for Food, Environmental and Occupational Health & Safety (ANSES) of 2010, on the health issues concerning LEDs, suggested banning public use of lamps which were in the moderate Risk Group 2, especially those with a high blue component in places frequented by children. In general, laser safety regulations—and the "Class 1", "Class 2", etc. system—also apply to LEDs.

Question: What type of LED can possibly cause blindness?
Answer: extremely bright LEDs
Light-emitting_diode

LEDs have been developed by Seoul Semiconductor that can operate on AC power without the need for a DC converter. For each half-cycle, part of the LED emits light and part is dark, and this is reversed during the next half-cycle. The efficacy of this type of HP-LED is typically 40 lm/W. A large number of LED elements in series may be able to operate directly from line voltage. In 2009, Seoul Semiconductor released a high DC voltage LED, named as 'Acrich MJT', capable of being driven from AC power with a simple controlling circuit. The low-power dissipation of these LEDs affords them more flexibility than the original AC LED design.

Question: What company has developed LEDs that can operate on AC power?
Answer: Seoul Semiconductor
Light-emitting_diode

Quantum dots (QD) are semiconductor nanocrystals that possess unique optical properties. Their emission color can be tuned from the visible throughout the infrared spectrum. This allows quantum dot LEDs to create almost any color on the CIE diagram. This provides more color options and better color rendering than white LEDs since the emission spectrum is much narrower, characteristic of quantum confined states. There are two types of schemes for QD excitation. One uses photo excitation with a primary light source LED (typically blue or UV LEDs are used). The other is direct electrical excitation first demonstrated by Alivisatos et al.

Question: Quantum Dot LEDs can do what special skill?
Answer: create almost any color on the CIE diagram
Light-emitting_diode

LEDs have been developed by Seoul Semiconductor that can operate on AC power without the need for a DC converter. For each half-cycle, part of the LED emits light and part is dark, and this is reversed during the next half-cycle. The efficacy of this type of HP-LED is typically 40 lm/W. A large number of LED elements in series may be able to operate directly from line voltage. In 2009, Seoul Semiconductor released a high DC voltage LED, named as 'Acrich MJT', capable of being driven from AC power with a simple controlling circuit. The low-power dissipation of these LEDs affords them more flexibility than the original AC LED design.

Question: What is the efficacy of an AC powered HP-LED?
Answer: 40 lm/W
Light-emitting_diode

White LEDs can also be made by coating near-ultraviolet (NUV) LEDs with a mixture of high-efficiency europium-based phosphors that emit red and blue, plus copper and aluminium-doped zinc sulfide (ZnS:Cu, Al) that emits green. This is a method analogous to the way fluorescent lamps work. This method is less efficient than blue LEDs with YAG:Ce phosphor, as the Stokes shift is larger, so more energy is converted to heat, but yields light with better spectral characteristics, which render color better. Due to the higher radiative output of the ultraviolet LEDs than of the blue ones, both methods offer comparable brightness. A concern is that UV light may leak from a malfunctioning light source and cause harm to human eyes or skin.

Question: White LEDs can be made by coating what?
Answer: near-ultraviolet (NUV) LEDs
Light-emitting_diode

LEDs have been developed by Seoul Semiconductor that can operate on AC power without the need for a DC converter. For each half-cycle, part of the LED emits light and part is dark, and this is reversed during the next half-cycle. The efficacy of this type of HP-LED is typically 40 lm/W. A large number of LED elements in series may be able to operate directly from line voltage. In 2009, Seoul Semiconductor released a high DC voltage LED, named as 'Acrich MJT', capable of being driven from AC power with a simple controlling circuit. The low-power dissipation of these LEDs affords them more flexibility than the original AC LED design.

Question: When did Seoul Semiconductor release the first high DC voltage LED?
Answer: 2009

Question: What is so good about ac powered HP-LEDs?
Answer: more flexibility

Question: What did Seoul Semiconductor name their ac powered HP-LED?
Answer: Acrich MJT
Light-emitting_diode

White LEDs can also be made by coating near-ultraviolet (NUV) LEDs with a mixture of high-efficiency europium-based phosphors that emit red and blue, plus copper and aluminium-doped zinc sulfide (ZnS:Cu, Al) that emits green. This is a method analogous to the way fluorescent lamps work. This method is less efficient than blue LEDs with YAG:Ce phosphor, as the Stokes shift is larger, so more energy is converted to heat, but yields light with better spectral characteristics, which render color better. Due to the higher radiative output of the ultraviolet LEDs than of the blue ones, both methods offer comparable brightness. A concern is that UV light may leak from a malfunctioning light source and cause harm to human eyes or skin.

Question: What device also works in a similar way as NUV LEDs?
Answer: fluorescent lamps

Question: The method of coating NUVs less efficient than what other LEDs?
Answer: blue

Question: What light can harm human eyes or skin?
Answer: UV light
Light-emitting_diode

A new style of wafers composed of gallium-nitride-on-silicon (GaN-on-Si) is being used to produce white LEDs using 200-mm silicon wafers. This avoids the typical costly sapphire substrate in relatively small 100- or 150-mm wafer sizes. The sapphire apparatus must be coupled with a mirror-like collector to reflect light that would otherwise be wasted. It is predicted that by 2020, 40% of all GaN LEDs will be made with GaN-on-Si. Manufacturing large sapphire material is difficult, while large silicon material is cheaper and more abundant. LED companies shifting from using sapphire to silicon should be a minimal investment.

Question: What size are the wafers used to create white LEDs?
Answer: 200-mm

Question: What is being used to produce white LEDs?
Answer: wafers composed of gallium-nitride-on-silicon

Question: By using silicon wafers, what is being avoided?
Answer: costly sapphire substrate

Question: What needs to be used to reflect light that would otherwise be wasted?
Answer: mirror-like collector

Question: By what year will% of all GaN LEDs be made with gallium-nitride-on-silicon wafers?
Answer: 2020
Light-emitting_diode

In September 2003, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.

Question: In what year was a new type of blue LED produced?
Answer: 2003

Question: How much more efficient as standard incandescents was the white LED commercially available in 2003?
Answer: four times

Question: Who demonstrated in 2003 the new type of blue LED?
Answer: Cree