yusuke1997/dblp-id-title huggingface dataset:
Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures
Current SiC Power Device Development, Material Defect Measurements and Characterization at Bosch
RF FDSOI Technology and modelling
A Fokker-Planck Solver to Model MTJ Stochasticity
Transport properties of strained silicon nanowires
Improved surface roughness modeling and mobility projections in thin film MOSFETs
PPAC scaling enablement for 5nm mobile SoC technology
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model
On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime
Novel low temperature 3D wafer stacking technology for high density device integration
Parameters extraction on HfOX based RRAM
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes
An advanced statistical compact model strategy for SRAM simulation at reduced VDD
Mission Smart Production 1
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
CVD graphene-FET based cascode circuits: A design exploration and fabrication towards intrinsic gain enhancement
On the electron mobility of strained InGaAs channel MOSFETs
BJT Device and Circuit Co-Optimization Enabling Bandgap Reference and Temperature Sensing in 7-nm FinFET
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration
Effects of constant voltage stress on organic complementary logic inverters
(Invited) silicene and phosphorene: Progress on the intriguing case of buckled atomic sheets
SiC power devices: From conception to social impact
Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate
A surface potential and current model for polarity-controllable silicon nanowire FETs
Physical understanding and optimization of resistive switching characteristics in oxide-RRAM
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface
Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
I. Double-Sided Cooling Technology for Emobility
Back-gate effects and detailed characterization of junctionless transistor
Micro-Transfer-Printing - A unique technology for heterogeneous integration of (opto-) electronic components
Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7
The essential contribution of CMOS imaging technologies to Earth Observation applications
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier
Investigations of vapor phase deposited transition metal dichalcogenide films for future electronic applications
22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale
A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement
Characterization of border traps in III-V MOSFETs using an RF transconductance method
Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI
Theoretical analyses and modeling for nanoelectronics
Artificial Intelligence: Why moving it to the Edge?
Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities
A 36V Ultrasonic Driver for Haptic Feedback Using Advanced Charge Recycling Achieving 0.20CV 2 f Power Consumption
Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well
Top-down fabricated ZnO nanowire transistors for application in biosensors
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR
Modeling the effect of surface roughness on the performance of line tunnel FETs
High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack
Complementary RF-LDMOS transistors realized with standard CMOS implantations
Cell Designer - a Comprehensive TCAD-Based Framework for DTCO of Standard Logic Cells
Terahertz electronics: The last frontier
Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures
Nanomagnetic logic clocked in the MHz regime
Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport
Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors
Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures
Active strain modulation in field effect devices
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications
Investigation of carbon-silicon schottky diodes and their use as chemical sensors
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide
Noise-induced dynamic variability in nano-scale CMOS SRAM cells
Inherent stochasticity in phase-change memory devices
The Environmental Footprint of IC Production: Meta-Analysis and Historical Trends
High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study
Integrated Graphene Photonic Devices: Status and Challenges
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance
Bimetallic nanoparticles for optimizing CMOS integrated SnO2 gas sensor devices
46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Autonomous Vehicles SEnsor Needs
Physical and electrical characterization of Mg-doped ZnO thin-film transistors
Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors
Effect of ions presence in the SiOCH inter metal dielectric structure
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs
Design and Fabrication of a Ring-Coupled Mach-Zehnder Interferometer Gyroscope
Quantum Computing Technology and Roadmap
Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement
SRAM with In-Memory Inference and 90% Bitline Activity Reduction for Always-On Sensing with 109 TOPS/mm 2 and 749-1, 459 TOPS/W in 28nm
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs
Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes
Bosch MEMS Foundry Service
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs
Impact of field cycling on HfO2 based non-volatile memory devices
FDSOI circuit design for high energy efficiency: Wide operating range and ULP applications - a 7-year experience
2D electronics - opportunities and limitations
A Maximally Row-Parallel MRAM In-Memory-Computing Macro Addressing Readout Circuit Sensitivity and Area
The world's first high voltage GaN-on-diamond power devices
48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018
Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies
Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator
High-quality synthetic 2D transition metal dichalcogenide semiconductors
A multi-functional 200, 000 lines/s tri-linear RGB line-scan sensor
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory
Material selection and device design guidelines for two-dimensional materials based TFETs
Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics
Plasmonic and electronic device integrated circuits and their characteristics
Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology
Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain
FD-SOI enabled mmWave telecommunication applications and system architectures
Energy-Efficient Design in FDSOI
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state
Understanding the conduction mechanism of the chalcogenide Ag2S silver-doped through ab initio simulation
MEMS optical microphone based on light phase modulation
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs
Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor
Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications
Gate stack optimization to minimize power consumption in super-lattice fets
New parameter extraction method based on split C-V for FDSOI MOSFETs
Variability in device degradations: Statistical observation of NBTI for 3996 transistors
Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate
A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs
Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications
Understanding Distance-Dependent Variations for Analog Circuits in a FinFET Technology
Automotive electronics and energy efficiency
NITSRI-2D: A Surface Potential Based SPICE Compatible Model for pH-Sensitive FETs Based on 2-D Materials
Gate Driver Solutions for Modern Power Devices and Topologies
Innovative manufacturing of large-area electronics
Exploiting FDSOI towards minimum energy point operation in processors and machine learning accelerators
"In-memory Computing": Accelerating AI Applications
A gate Modulated avalanche bipolar transistor in 130nm CMOS technology
An integration approach for graphene double-gate transistors
Parallel Product-Sum Operation Neuromorphic Systems with 4-bit Ferroelectric FET Synapses
Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure
Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28 Si for spin qubit applications
Test Chip for Identifying Spice-Parameters of Cryogenic BiFET Circuits
Z 2 -FET used as 1-transistor high-speed DRAM
Utilizing I-V non-linearity and analog state variations in ReRAM-based security primitives
Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array
Endurance-based Dynamic VTHDistribution Shaping of 3D-TLC NAND Flash Memories to Suppress Both Lateral Charge Migration and Vertical Charge De-trap and Increase Data-retention Time by 2.7x
Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI
An Energy Autonomous Light Intensity Sensor for Monarch Butterfly Migration Tracking
Data regeneration and disturb immunity of T-RAM cells
Compact physical model of a-IGZO TFTs for circuit simulation
Step tunneling-enhanced hot-electron injection in vertical graphene base transistors
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices
CoolSiC™ and major trends in SiC power device development
Novel suspended graphene devices for extreme sensing
Empirical ballistic mobility model for drift-diffusion simulation
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design
Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FET
High performance NEMS devices for sensing applications
Novel Deep Trench Buried-Body-Contact (DBBC) of 4F 2 cell for sub 30nm DRAM technology
Epitaxial growth and diffusion characteristics analysis of vertical thin poly-Si channel transfer gate structured pixels for 3D CMOS image sensor
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs
49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019
Electronic-Photonic Cryogenic Egress Link
A Fast Method for Modeling and Optimizing Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes
Flexible thermoelectric generator based on transfer printed Si microwires
44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014
Novel FDSOI band-modulation device: Z 2 -FET with Dual Ground Planes
200 mm Wafer level graphene transfer by wafer bonding technique
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface
High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers
Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory
HV Floating Switch Matrix with Parachute Safety Driving for 3D Echography Systems
New frontiers in digital health: Remote monitoring of animal and human metabolism on our smartphones and tablets
Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave Applications
Review of candidate devices for neuromorphic applications
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs
Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs
Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets
Reliability tests for discriminating between technological variants of QFN packaging
Low-energy inference machine with multilevel HfO2 RRAM arrays
2D electronics: Graphene and beyond
Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks
49dB depletion-load amplifiers with polysilicon source-gated transistors
Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications
Role of junction depth in light emission from silicon p-i-n leds
Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration
Compact Modeling of Phase Change Memory with Parameter Extractions
High Ion/Ioff ratio BJT selector for 32 cell string Resistive RAM arrays
A silicon photomultiplier with >30% detection efficiency from 450-750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm CMOS
Performance of tri-gate AlGaN/GaN HEMTs
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization
EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region
Sharp switching, hysteresis-free characteristics of Z 2 -FET for fast logic applications
Soft and bio-degradable electronics: Technology challenges and future applications
Emerging nonvolatile memory (NVM) technologies
Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates
A CMOS-compatible boosted transistor having >2× drive current and low leakage current
Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2
Circuit Design Challenges of Highly-Integrated mm-Wave Radar-Based Sensors in SOI based Technologies
Electron transport in germanium junctionless nanowire transistors
Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications
Scalability of planar FDSOI and FinFETs and What's in store for the future beyond that?
Transistors for 100-300GHz Wireless
Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs
Breakdown investigation in GaN-based MIS-HEMT devices
How to Achieve World-Leading Energy Efficiency using 22FDX with Adaptive Body Biasing on an Arm Cortex-M4 IoT SoC
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits
Physical model for GaN HEMT design optimization in high frequency switching applications
Novel back-biased UTBB lateral SCR for FDSOI ESD protections
ACE: A robust variability and aging sensor for high-k/metal gate SoC
Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron
New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout
RTN and LFN Noise Performance in Advanced FDSOI Technology
FinFET versus UTBB SOI - A RF perspective
Nonvolatile resistive memory devices based on hydrogenated amorphous carbon
Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications
On-chip I-V variability and random telegraph noise characterization in 28 nm CMOS
Back-gate bias effect on UTBB-FDSOI non-linearity performance
Carbon nanotube resistors as gas sensors: Towards selective analyte detection with various metal-nanotubeinterfaces
Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs
Drain-conductance optimization in nanowire TFETs
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories
SiC Power Device Mass Commercialization
Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates
Si n-TFETs on ultra thin body with suppressed ambipolarity
Emulating artificial mechanoreceptor functionalities from SiO2-based memristor and PDMS stretchable sensor for artificial skin applications
Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application
Micron-scale inkjet-assisted digital lithography for large-area flexible electronics
16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcell
Device modeling of solution-processed organic solar cells, photodiodes and photo-resistances Invited paper
The defect-centric perspective of device and circuit reliability - From individual defects to circuits
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions
Advancements in indirect Time of Flight image sensors in front side illuminated CMOS
A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs
Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs
Piezoresistive transduction optimization of p-doped poly-Silicon NEMS
Graphene / a-Si: H multispectral photodetectors
Design and Characterization of Monolithic Microring Resonator based Photodetector in 45nm SOI CMOS
Closed-form transition rate in hopping conduction
Emerging memories
End of the downsizing and world after that
A Novel Approach to Modeling Insulator Wave-Function Penetration and Interface Roughness Scattering in MOSFETs
First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design
Wide temperature range integrated amplifier in bipolar 4H-SiC technology
Bipolar junction transistor based sensors for chemical and biological sensing
A Large-Area Gravure Printed Process for P-type Organic Thin-Film Transistors on Plastic Substrates
Development of plasmonic MEMS CMOS infrared sensors for occupancy detection
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies
Composition-modulated electrodeposited PdNi-Si hydrogen sensors for low power applications
A large signal non quasi static compact model for printed organic thin film transistors
Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations
High-NA EUV Optics - The key for miniaturization of integrated circuits in the next decade
Trap Behavior of Metamorphic HEMTs with Pulsed IV and $1/f$ Noise Measurement
On the optimization of SiGe and III-V compound hetero-junction Tunnel FET devices
Novel CMOS-compatible a-Si based oscillator and threshold switch
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors
Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects
Flicker noise in advanced CMOS technology: Effects of halo implant
Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications
Slowing of Moore's law signals the beginning of smart everything
Physics-based electrical compact model for monolayer Graphene FETs
IR-optimized silicon demodulating detector with 3-dimensional electrodes
The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers
Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service
Flexible and stretchable electronics for wearable healthcare
The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire
$4.6\mu \mathrm{m}$ Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences
Analyzing inference robustness of RRAM synaptic array in low-precision neural network
Vertical and lateral charge losses during short time retention in 3-D NAND flash memory
Full-band simulation of p-type ultra-scaled silicon nanowire transistors
From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration
Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks
Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?
A 0. 94-\mu \mathrm{V}_{\text{rms}}$ Input Noise Pixel-Level Continuous Time $\Sigma\Delta$ IADC Interface for THz Sensing
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays
MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI
A Model for the Open-Circuit Voltage Dependence on Temperature for Integrated Diodes
Signal-to-noise ratio enhancement using the gate coupling effect
Deterministic simulation of 3D and quasi-2D electron and hole systems in SiGe devices
Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs
Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs
Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing
Progress, status, and prospects of superconducting qubits for quantum computing
A novel Approach to measure and model Plasma Noise in Avalanche Diodes
Investigation on multiple activation energy of retention in charge trapping memory using self-consistent simulation
STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process