yusuke1997/dblp-id-title huggingface dataset:
Significance of Multi and Few Domain Ferroelectric Switching Dynamics for Steep-Slope Non-Hysteretic Ferroelectric Field Effect Transistor
GaN Integrated Circuits for Power Electronics
Non-volatile Capacitance Tuning in Graphene/(Hf, Zr)O2/Metal Varactors
Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications
Modeling of Content addressable memory using 2D Reconfigurable Transistors
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts
90 nm GaN Technology for Millimeter-Wave Power Applications to W-Band and Beyond
Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes
Overcoming the low cell current bottleneck of 3D NAND flash memory array with novel device design
High Power Indium Phosphide Photonic Integrated Circuit Platform
Performance Estimation of GaN CMOS Technology
Steep Subthreshold Swing Originating from Gate Delay
First Demonstration of GaN RF HEMTs on Engineered Substrate
Field Effect and Raman Characterization of Self-Assembled Mos2 Nanoscrolls
Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment
Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers
Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes
A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability
Analyzing the Dynamics of Store Mechanism and Data Retention through Transient Simulations in Si/Ge TRAM for Cryogenic Memory Applications
Manufacturable Heterogeneous Integration for Flexible CMOS Electronics
Recent Progress in Spintronics and Devices
Artificial Optic-neural Synapse Based on Floating-gate Phototransistor for Machine Vision
Surface Passivated InN Nanowire and Graphene Heterojunction Based Memtransistor
An Improved 1T-DRAM Cell Using TiO2as the Source and Drain of an n-Channel PD-SOI MOSFET
Paper electronics: a sustainable multifunctional platform
Gate Leakage in Non-Volatile Ferroelectric Transistors: Device-Circuit Implications
Room temperature resonant tunneling in metal-insulator-insulator-insulator-semiconductor devices
CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth
Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction
Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact
Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode
Double magnetic tunnel junction based ∑Δ∑ hardware neuron
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K
Compact Model for Trap Assisted Tunneling based GIDL
Reduced Switching Current Density and Improved Interface Quality using Oxynitride Tunnel Barrier in Magnetic Tunnel Junctions for MRAM Application
Understanding and Manipulating Electronic Noise in Electrochemical Random Access Memory for Neuromorphic Computing
Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs
Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors
Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack
Approaches for Dynamic IR N ano-Optics using 2D Materials
Using Coplanar Waveguides as Spin-Wave Sources with Improved Bandwidth
Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications
Photo-amplification in Bipolar $\mathbf{WSe}_{2}$ Transistors with Electrostatic Gating
Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate
Photoacoustic Detection of Ammonia and Hydrogen Using Plasmonic Absorption in Pt Functionalized GaN Microcantilevers
Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs
Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application
Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023
Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide
Unique Features of Electron Transport and Low-Frequency Noise in Quasi-One-Dimensional ZrTe3 van der Waals Nanoribbons
A width-scalable SPICE compact model for GaN HEMTs including self-heating effect
Nanoscale Scanning Probe Thermometry of TaOe-based selector devices
Impact of Multi-Domain on Ferroelectric Tunnel Junction Design Metrics
Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and Robotics
Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK
Thickness Tunable Transport Properties in MoTe 2 Field Effect Transistors
Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties
Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors
2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching
High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts
CMOS Technology with Integrated Carbon-Nanotube Contact Plugs
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell
First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping
Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown $\beta$-Ga2O3
Nanoscale HfO2-based memristive devices for neuromorphic computing
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz
Engineering p-n junctions in grapbene/molybdenum disulfide heterostructures
Accurate and Compact Small-Signal Modeling of Zinc-Oxide Thin-Film Transistors for Operation in the GHz Regime
Modeling Multi-states in Ferroelectric Tunnel Junction
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors
Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory
Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes
Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing
Graphene-Channel-Transistor Terahertz Amplifier
Improved Mobility Extraction for Transistors with Gated Contacts
Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VT Devices Fabrication for Hardware Security Applications
Low Power Nanoscale Switching of VO2using Carbon Nanotube Heaters
Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage
Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devices
Natural Organic Fructose-based Nonvolatile Resistive Switching Memory for Environmental Sustainability in Computing
First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates
Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise
Fast terahertz detection by asymmetric dual-grating-gate graphene FET
Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency Operation
All CVD Boron Nitride Encapsulated Graphene FETs
Impact Ionization Model for S-NDR based Threshold Switching Devices
Fabrication of Hybrid Fin/Planar LDMOS with Modulation Gate
Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs
Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation
Diamond Metal-Semiconductor Field Effect Transistor for High Temperature Applications
Process Technologies for GaN High Voltage Devices
Flexible Thin-Film PZT Ultrasonic Transducers
A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout
Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
Cryo-TRAM: Gated Thyristor based Capacitor-less DRAM for Cryogenic Computing
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors
Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric
Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
Spin-coated ALPO-RRAM with Switching Speed < 50 ns and Nonlinearity 0.5
Cockcroft-Walton Multiplier based on Unipolar Ag/HfO 2 /Pt Threshold Switch
Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State Storage
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz
Artificial Neuron using Ag/2D-MoS2/Au Threshold Switching Memristor
Full In-Place Printing of Flexible Electrolyte-Gated CNT-TFTs
Emerging Low Dimensional Material Devices for Beyond von-Neumann Computing
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications
Analysis of Polarization Switching in HZO/ZrO2 (HZZ) Nanolaminates based on Sub-lattice Phase-field Model
3 Gbps Free Space Optical Link based on Integrated Indium Phosphide Transmitter
Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack
A Novel Device Design with Enlarged Storage Region for Retention Enhancement of 1T DRAM Cell
Controllability of Relaxation Behavior in Ag-based Diffusive Memristors
$f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length
Supercapacity (>1000 fJF/cm 2 ) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate
CMOS+X Technologies for Neuro-Vector-Symbolic Computing
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond
Flexible Low-Power Superlattice-Like Phase Change Memory
Highly-Doped Through-Contact Silicon Epi Design at 3 nm node
Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm 2
High Mobility and Drive Current ZnO Thin Film Transistors
High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach
Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states
Oxygen Engineering for Positive Bias Stress Stability of Top-Gated Indium Tin Oxide (ITO) Transistors
2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs
Ultrathin Metal Film Transparent Conductor for Efficient Light Coupling in Organic Light Emitting Diode
Spin-based majority gates for logic applications
Depleted Graphene-Oxide-Semiconductor Junctions for High Energy Radiation Detection
Superconducting Josephson Junction FET-based Cryogenic Voltage Sense Amplifier
Negative Differential Resistance Regime of Field Emitter Arrays
Multifunctional Resistance Switching in Monolayer Hexagonal Boron Nitride Atomristor
Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices
Demonstration of FETs with 3D Dirac Semimetal, Cd3As2
Development of hierarchical simulation framework for design and optimization of molecular based flash cell
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
Reproducible and High-Temperature Performance of NiO/ $\beta$-Ga2O3 Vertical Rectifiers in Achieving 8.9 kV Breakdown
Thermally Aided Nonvolatile Memory Using ReS 2 Transistors
Optoelectronics based on Vertical Transport in Multi-layer MoS2
Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOI
76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018
D-band frequency memristor switch based on monolayer boron nitride
Quantifying the thermal boundary conductance of 2D-substrate interfaces
Enhancing Electrostatic Control of High-Speed Liquid-Metal-Printed In2O3 TFTs via Ga Doping
Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications
Atomically Thin p-doping Layer and Record High Hole Current on WSe2
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>10 6 ) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors
$\alpha$-Ga2O3/Diamond Heterojunction PN Diode: Device Fabrication and TCAD Modelling
Self-Heating characterization and modeling of 5nm technology node FinFETs
First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors
Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel
Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory
Impact of Multi-Domain Microscopic Interactions on Magnetic Tunnel Junction's Static and Transient Characteristics
Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM Applications
Efficient Optoelectronics with 2D Materials
First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET)
Three-Dimensionally Structured Betavoltaics
2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes
Localized Heating in Mo'I'ei-Based Resistive Memory Devices
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate
Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors
Impact of Bottom Electrode Roughness on the Analog Switching Characteristics in Nanoscale RRAM Array
3D Finite Thermal Modelling of SrSnO3 Field Effect Transistors
Linear Weight Update in MoS2/Graphene Memristive Synapses for Unsupervised Learning
Insinhts on the DC Characterization of Ferroelectric Field-Effect-Transistors
3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation
Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation
Reconfigurable Superconducting Logic Using Multi-Gate Switching of a Nano-Cryotron
Resistive Switching Early Failure and Gap Identification in Bilayer Selectorless RRAM Applications
A wired-AND transistor: Polarity controllable FET with multiple inputs
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies
Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs
RRAM Based On-Sensor Visual Data Preprocessing for Efficient Image Classification
Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors
Optimization of Backside of Silicon-Compatible High Voltage Superlattice Capacitor for 12V-to-6V On-Chip Voltage Conversion
Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates
A Vacuum Multi-Finger Transistor in CMOS Technology
A FeFET Based Processing-In-Memory Architecture for Solving Distributed Least-Square Optimizations
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide
Large-Signal Modeling of GaN HEMTs using Fermi Kinetics and Commercial Hydrodynamics Transport
Quantum transport simulations for the next decade: Exploiting quantum topology in emerging 2D-devices
Demonstration of an oscillatory neuron using SiOx-based memristive switches
An Experimentally Validated, Universal Memristor Model Enabling Temporal Neuromorphic Computation
Exchange-Coupling-Enabled Electrical-Isolation of Compute and Programming Paths in Valley-Spin Hall Effect based Spintronic Device for Neuromorphic Applications
710 V Breakdown Voltage in Field Plated Ga203 MOSFET
High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper)
Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes
Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage
2- Transistor Schmitt Trigger based on 2D Electrostrictive Field Effect Transistors
Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers
Optimizing TiTe2/Ge4Sb6Te7 Superlattices Towards Low-Power, Fast-Speed, and High-Stability Phase Change Memory
Analyzing and Increasing Yield of ZnO Thin-Film Transistors for Large-area Sensing Systems by Preventing Process-Induced Gate Dielectric Breakdown
Small Signal Analysis of GaN IMPATT Diodes for W-band and Sub-THz Wave Generation
Graphene waveguide-integrated thermal infrared emitter
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C
Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications
Ferroelectrics, Negative Capacitance and Depolarization Field: What exactly is negative capacitance?
Exploring Silver Contact Morphologies in Printed Carbon Nanotube Thin-Film Transistors
Improved Endurance with Electron-Only Switching in Ferroelectric Devices
FeFET based LIF Neuron with Learnable Threshold and Time Constant
Drift-enhanced Unsupervised Learning with PCM Synapses
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes
Device-Aware Quantization in Resistive Random Access Memory-Based Crossbar Arrays to Account for Device Non-Idealities
MoS2/graphene Lateral Heterostructure Field Effect Transistors
Are Argon and Nitrogen Gases Really Inert to Graphene Devices?
Optimizing Monolithic and Heterogeneous Integration to Create Intelligent-Grand-Scale-Integration for Smart MicroSystems
Annealing and Encapsulation of CVD-MoS2 FETs with 10 10 On/Off Current Ratio
Fully Integrated Flexible RF Detectors in MoS2 and Graphene based MMIC
Novel 2-D Materials for Tunneling FETs: an Ab-initio Study
High performance black phosphorus field-effect transistors with vacuum-annealed low-resistance Ohmic contact
Cryogenic Memory Array based on Ferroelectric SQUID and Heater Cryotron
A Three-Terminal Edge-Triggered Mott Switch
Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF application
Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted
Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2
Terahertz auto oscillations in non-collinear coplanar metallic antiferromagnets
Al-InAs Superconductor-Semiconductor Josephson Junction Parametric Amplifier
Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management
Mobility Boost in Transparent Oxide Semiconductors with High-κ Gated TFTs
Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk
Technology Scaling Effects on SRAM Data Remanence
Field-Emission Enhanced Contacts for Disordered Semiconductor based Thin-Film Transistors
Solving optimization tasks power-efficiently exploiting VO2's phase-change properties with Oscillating Neural Networks
Optimization of Source/Drain-epi Region Height in GAA Nanosheet FET for RF Applications
Modeling and Comparative Analysis of Hysteretic Ferroelectric and Anti-ferroelectric FETs
Up to 100-fold Improvement of Threshold Voltage Stability in ITO Transistors
Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substrates
Energy Efficient Ternary Device in 28-nm CMOS Technology with Excellent Short-Channel Effect Immunity and Variation Tolerance Characteristics
MOSFET Probabilistic-Bit Behavior
Computational Associative Memory Powered by Ferroelectric Memory
Experimental RF Characterization of Ferroelectric Hafnium Zirconium Oxide Material at GHz for Microwave Applications
Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode
ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel
Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz
Polarization-Engineering of III-N mm-Wave Transistors for High Efficiency and Linearity
Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation
AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm
Ferroelectric Tunneling Junctions for Neurosynaptic Computing
2D materials in resistive memory and neuromorphic computing system applications
Artificial Neural Network Surrogate Models for Efficient Design Space Exploration of 14-nm FinFETs
Phase-change memory enables energy-efficient brain-inspired computing
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts
SiGeSn Technology for All-Group-IV Photonics
The nanopore-FET: a nanofluidic-nanoelectronic silicon-based device for enabling proteomics
High-performance ultrathin body TiO2 TFTs with record on/off current ratio and subthreshold swinz
Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETs
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation
Freely Suspended Platinum Diselenide Membranes without Polymer Support for Piezoresistive Pressure Sensing
Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction
Realization of the First GaN Based Tunnel Field-Effect Transistor
1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes
Electrically Switchable Infrared Nanophotonic Devices with VO2
Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization
Ni/TiO2/ $\beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage
A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range
Ge-based Mid-infrared integrated photonics platform for Sensing
First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applications
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling
Ultra Low-Cost Epi-Gd2O3 MOSFET Based Novel 1T Frequency Detector
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices
Domain Formation in Ferroelectric Negative Capacitance Devices
Hybrid FETs Based on Monolayer ZrI2 for Energy-Efficient Logic Applications
Enhancement-Mode Current Aperture Vertical Ga2O3 MOSFETs
MFSFET with Ferroelectric HfN for Analog Memory Application
AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices
5nm FinFET Cryogenic SRAM Evaluation for Quantum Computing
Three-Input Combinational Logic Gates based on Reconfigurable Si Field-Effect Transistors
A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications
Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
Gigahertz Zinc-Oxide TFT-Based Oscillators