yusuke1997/dblp-id-title huggingface dataset:
A 2-Stage C-Band 130W GaN MMIC Power Amplifier in an Overmold QFN Package
A Novel Base Resistance Model Incorporating Base Distributive Effects Along with Emitter Length
A 202 GHz Link Using Planar Transceiver Modules
40V High Side PSI5 Transceiver with 65dBµV Conducted Emission Level in a BiCMOS Process
135GHz CMOS / LTCC MIMO Receiver Array Tile Modules
The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications
Leak-Proof Packaging for GaN Chip with Controlled Thermal Spreading and Transients
AC-Stacked Power Amplifier for APT/ET LTE HPUE Applications
Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs
Iterative De-Embedding and Extracted Maximum Oscillation Frequency f MAX in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors
Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA
A 4-W K-Band 40% PAE Three-Stage MMIC Power Amplifier
Quad-Channel 100-GHz-Bandwidth InP- HBT-Based Linear Amplifier Module for High Symbol Rate Communications
A D-Band Sub-Harmonically Pumped Mixer with High LO Suppression Using 250-nm InP DHBT P-N Junction
Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe
Millimeter-Wave GaN SSPAs: Technology to Power 5G and the Future
A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth
A 120 GS/s 2: 1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology
Device Scaling roadmap and its implications for Logic and Analog platform
A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, FL, USA, October 27-30, 2024
An Over 130-GHz-Bandwidth InP-DHBT Baseband Amplifier Module
Ultra-fast Thermoreflectance Imaging for Electronic, Optoelectronic, and Thermal Devices
450 GHz f T SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021
A DC-to-150-GHz InP-DHBT Active Combiner Module for Ultra-Broadband Signal Generation
A 132-204 GHz Carrier Storage Frequency Divider with sub-50 Micro-Watt DC Power
An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS
A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance
Using Pulsed-Mode Measurements of SiGe HBTs for Non-Destructive, Improved RF-SOA Estimation
A 130-GHz Bandwidth 61-dBOhm Variable-Gain Differential Linear TIA in a 130-nm SiGe: C BiCMOS Technology
Opportunities for Millemeter-Wave Wireless Technologies Using Metasurfaces
Evaluation of Stacked-CNTFET Structures for High-performance Applications
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer
High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTs
FinFET for mm Wave - Technology and Circuit Design Challenges
Reverse Intermodulation in Multi-Tone Array Transmitters
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems
Integrated CMOS-Compatible Mode-Locked Lasers and Their Optoelectronic Applications
A 2-6 GHz, 45 dBm Peak Power T/R SPDT Switch for 5G mMIMO Applications
A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology
128-GS/s ADC Front-End with Over 60-GHz Input Bandwidth in 22-nm Si/SiGe FDSOI CMOS
Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications
Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications
A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz
A Q-band Phased-Array Transmit Beamformer in 45 nm CMOS SOI for SATCOM
On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility Effect
A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider
Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias
Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs
Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications
Geometry scalable compact modeling of GaAs HBTs
A 64Gb/s Si-Photonic Micro-Ring Resonator Transceiver with Co-designed CMOS Driver and TIA for WDM Optical-IO
Thermal impedance of SiGe HBTs: Characterization and modeling
Design of an Ultra-Low Phase Noise Broadband Amplifier in 130 nm SiGe BiCMOS Technology
A 268-325 GHz 5.2 dBm Psat Frequency Doubler Using Transformer-Based Mode Separation in SiGe BiCMOS Technology
300-GHz 160-Gb/s InP-HEMT Wireless Front-End With Fully Differential Architecture
10W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC
High Volume Wafer Fab Equipment for RF Technologies
A 200 MHz Bandwidth GaAs Switch-Mode Supply Modulator
Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling
Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT)
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications
Using Channel Physical Relationships in pHEMT Modeling
The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs
50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT
Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs
A 5.6 dB NF Two-Stage 110 - 125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS
GaN/Si 37-40 GHz T/R Chip MMIC for 5G Communications
Integration of SiGe HBT with f T =305GHz, f max =537GHz in 130nm and 90nm CMOS
Diamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT?
A 3D-Integrated 56 Gb/s NRZ/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics Transmitter
A 6-12 GHz Reconfigurable Transformer-Based Outphasing Combiner in 250-nm GaAs
A 4.6V, 6-bit, 64GS/s Transmitter in 22nm FDSOI CMOS
Neural Network-based Methods for Microwave Active Device Modeling
Trends in Millimeter-Wave and THz Test Equipment
Characterization of the Self-Enhanced Class J PA Operating Mode in LDMOS and GaN Transistors
GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications
A 2x-Oversampling, 128-GS/s 5-bit Flash ADC for 64-GBaud Applications
Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate
A 5-GHz Injection-Locked Delay Cell with 10-25 ns Adjustable Group-Delay in a 130-nm SiGe BiCMOS Technology
Modeling High-Current Effects in Bipolar Transistors: A Theory Review
InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design
Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range
ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies
Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications
Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network
Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications
A 28-37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers
A 108-Gbps, 162-mW Cherry-Hooper Transimpedance Amplifier
A 1-20 GHz Distributed, Stacked SiGe Power Amplifier
Electric Field Engineering in Graded-Channel GaN-Based HEMTs
A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network
Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework
InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz
25.78-Gbit/s Burst Mode TIA for 50G-EPON OLT
Analog Demultiplexer Operating at up to 200 GS/s Using Four Time Interleaved Switched Emitter Followers with a 50% Duty Cycle Clock
Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver
A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS
Practical Dimensions of Contemporary GaN Modeling
Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICs
Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier
A 40Gb/s Linear Redriver with Multi-Band Equalization in 130nm SiGe BiCMOS
Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023
N-Path Mixers Beyond CMOS
Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode
A Direct Digital Synthesizer-Based Arbitrary Waveform Generator for Envelope Modulation in Trapped-Ion Quantum Computer Operating at 4K
Over 70-GHz 4.9-Vppdiff InP linear driver for next generation coherent optical communications
A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications
Ka-Band, Reactively Matched Non-Uniform Distributed Power Amplifier MMICs in GaN-on-SiC
High-Gain 500-GHz InP HBT Power Amplifiers
Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach
A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS Technology
Ka-Band MMIC Implementation of a Load-Modulating Loop Combiner Power Amplifier
Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological Applications
From Transistor Parameters to PA Circuit Performance (Invited)
Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT
SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process
A compact low-loss Ku-Band 90° Hybrid Coupler for Front-End Modules in 45 nm SOI CMOS
On the Safe Operating Area of InP HBTs
A 60 GS/s 8-b DAC with > 29.5dB SINAD up to Nyquist frequency in 7nm FinFET CMOS
Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs
Recovery of Intrinsic Heterojunction Bipolar Transistors Profiles by Neural Networks
Comparison of 10/20/40 GHz Quadrature VCOs for W-band FMCW Radar Systems in 90nm SiGe BiCMOS Technology
The DARPA Millimeter Wave Digital Arrays (MIDAS) Program
A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology
Carrier Transport in BJTs: from Ballistic to Diffusive and Off-Equilibrium
100 GBaud DSP-Free PAM-4 Optical Signal Generation Using an InP-DHBT AMUX-Driver and a Thin-Film Lithium Niobate Modulator Assembly
Virtual-Source Modeling of N-polar GaN MISHEMTS
3D Heterogeneous Integration (3DHI): An Enabler For Next Generation RF Systems
High-Speed TLP and ESD Characterization of ICs
140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias Terminations
Demonstration of a Ku-Band N-Path Downconverter in GaN-on-SiC
A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications
A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology
A 10 Gb/s, 120 GHz Compact and Energy-Efficient Harmonic-OOK Modulator using 90 nm SiGe BiCMOS
Analog 2: 1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology
Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing
A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOS
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology
Practical Approaches to Industrializing Near-THz Communication Systems
18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA
Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors
Scaling of InP/GaAsSb DHBTs: A Simultaneous f T /f MAX =463/829GHz in a 10µm Long Emitter
Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications
Analog/Mixed-Signal Integrated Circuits for Quantum Computing
A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology
The SiGe HBT at Cryogenic Temperatures: Invited Pager
Current Status of Terahertz Integrated Circuits - From Components to Systems
Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits
A 6-bit 56-GSa/s DAC in 55 nm SiGe BiCMOS
100-300GHz Wireless: ICs, Arrays, and Systems
Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers
Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications
An 8.2-pJ/bit, 56 Gb/s Traveling-wave Modulator Driver with Large Reverse Terminations
Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate
A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors
Device modeling tools and their application to SiGe HBT development
A Packaged Single-Ended K-Band SiGe LNA with 2.14 dB Mean Noise Figure
Broadband Reconfigurable Transceivers in SiGe
Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor
Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model
128-GS/s 1-to-4 SiGe Analog Demultiplexer with 36-GHz Bandwidth for 6-bit Data Converters
Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHz
A Crystal-Less Programmable Clock Generator with RC-LC Hybrid Oscillator for GHz Applications in 14 nm FinFET CMOS
A Wideband Ultra-Low Noise 15-55 GHz Dual-Beam Receive Phased-Array Beamformer with 2.9-4.2 dB NF
A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS
The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor's (HCBT) Beta Recovery at Cryogenic Temperatures
Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs
Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance
MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects
Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates
III-V Nanowire MOSFETs: RF-Properties and Applications
TCAD-Based Design of SiGe HBT Germanium Profiles via Bayesian Optimization
SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch
Incorporation of the Virtual Gate Effect and Consequences of its Neglect in the Simulation of ON-State I D -V DS Curves of AlGaN/GaN HEMTs
An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs
Load-Modulated Balanced Amplifiers for Next-G Wireless Communications
High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications
High Performance 0.25µm GaN Technology with Low Memory Effects
Millimeter-Wave CMOS Phased-Array Transceiver Toward 1Tbps Wireless Communication
Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design
A Multi-mode Linear Optical Modulator Driver Circuit in 130 nm SiGe BiCMOS Technology
Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications
8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers
InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver
Vertical Power Delivery and Heterogeneous Integration for High-Performance Computing
Design of 20-28 GHz GaAs Phase Shifter MMIC and Small Signal Validation using MVS-GaAs Model
An 80-GBaud PAM-4 $G_{\mathrm{m}}$ -Boosted Variable-Gain TIA in 22-nm FDSOI
Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs
Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018
Modulator Technologies for Intra-Datacenter Optical Interconnects Beyond 1Tbps
A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics
High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs
A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology
Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers
A V-Band SiGe Image-Reject Receiver Front-End for Atmospheric Remote Sensing
120 GHz GaAs Single-Balanced Mixer
A 42.5-51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and Attenuator
SiGe BiCMOS Current Status and Future Trends in Europe
Comparative Performance of 100-200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors
Maximizing Energy Efficiency in Sub-THz Radio Communication and Prospective toward 6G
SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS
82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency
Broadband Linear Drivers for 800G/1.6T Energy Efficient Optical Links
Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers
High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology
Trends in Imaging Radars Powered by Modern Silicon
A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology
Configurable and Scalable High-Side or Low-Side Driver in BiCMOS with 20dBµV Emission at 88MHz
D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System
A 256-Gbps PAM-4 Signal Generator IC in 0.25-µm InP DHBT Technology
Low Phase Noise and Low Power Consumption Magnetic Cross-Coupled Push-Push VCO in SiGe BiCMOS Technology
Load pull measurement techniques: architecture, accuracy, and applications
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs
A Review of Physics-based Modeling of Millimeter-Wave Transistors
300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter
Thermal Resistance Formulation and Analysis of III-V FETs Based on DC Electrical Data
Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process
HICUM/L2: Extensions over the last decade
Full Antenna in Package Solution for 100GHz 6G infrastructure, in 140nm SiGe BiCMOS Technology
Innovative RF Device Technologies for Advanced Information and Communications Network Society
Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs
A Fully Integrated 20-500-GHz Coherent Detector with 2-Hz Frequency Resolution
Nonlinear Embedding of FET Devices for High Efficiency Power Amplifier Design
Scaling Millimeter-Wave Phased Arrays: Challenges and Solutions
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019
High-Performance CMOS TIA for Data Center Optical Interconnects
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz
Integrated Photonics in Thin-Film Lithium Niobate
A 15-24 GHz, 15W Reactively Matched GaN MMIC Power Amplifier
Advanced mm-Wave Power Electronics (Invited Talk)
A 12 Bit R-2R Digital-to-Analog Converter for Shuttling Operation in a Trapped-Ion Quantum Computer
Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies
High Performance 150 mm RF GaN Technology with Low Memory Effects
Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology
Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs
Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES)
Silicon Photonic Mach-Zehnder Modulator Driver for 800+Gb/s Optical Links
A DC-51.5 GHz Electro-Absorption Modulator Driver with Tunable Differential DC Coupling for 3D Wafer Scale Packaging
Practical and Efficient Approaches to Device Modeling and Power Amplifier Module Design
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
Sub-100nm GaN/Si MMIC processes for 6G telecommunications
Collector-substrate modeling of SiGe HBTs up to THz range
Wideband Switched-Capacitor and Switched-Transmission-line Circulators in 40nm GaN Technology: Design and Device Modeling
Reactively Matched 2-18 GHz Broadband GaN-on-SiC MMIC Driver Amplifier
Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling
A Family of Physics-Based Models for Monolithic GaN Integration
Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents
New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs
Mathematical foundation for constructing accurate dynamic bipolar transistor compact models
Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction
A Biasing Scheme for the Gain Compression Point Optimization of HBT Cascode D-Band LNAs
Advances in Terahertz CMOS for 6G
Monolithic Silicon Photonics
A Multiple Input and Gain Adjustable Phase Detector in 130 nm SiGe BiCMOS Technology
A Single-Chip 25.3-28.0 GHz SiGe BiCMOS PLL with -134 dBc/Hz Phase Noise at 10 MHz Offset and -96 dBc Reference Spurs
Coherent Transceiver for High Speed Optical Communications: Opportunities and Challenges
The Impact of BEOL Stress on SiGe HBTs at Cryogenic Temperatures
A High Efficiency 4-18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology
Probabilistic Computing with Binary Stochastic Neurons
Modeling and Simulation of Discrete Silicon Carbide Integrated Passive Devices in High-Power RF Amplifiers
A 17 GHz All-npn Push-Pull Class-C VCO
8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology
Materials, Processes, and Markets for Monolithic III-V Devices in Silicon Integrated Circuits
Gen1 Active Tunable SiGe Integrated Parallel Synthesis Filters (PSF) without Q-Enhancement
A 24 GHz Sub-Harmonically Pumped Resistive Mixer in GaN HEMT Technology
Compact Design of Passive Networks in RF and Millimeter-Wave Integrated Circuits (invited)
A 0.03 mm 2 Inductorless 50 Gb/s Multiplexer for Josephson Arbitrary Waveform Synthesizers
Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown
GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications
A Shunt-Feedback TIA with Common-Base Variable Gain Input Stage for 128-GBaud Coherent Communication
Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs