[Galaxy S I9000 Android Development] jbrugger:
Hmm. searching the internet...

As stated by samsung:

www.samsung.com/global/business/semiconductor/products/fusionmemory/Products_MoviNAND.html

moviNAND = High-density MLC NAND Flash & MMC controller

So it's MLC NAND.

http://en.wikipedia.org/wiki/Flash_memory#NAND_flash

MLC NAND Flash is typically rated at about 5K-10K cycles (Samsung K9G8G08U0M)

(wikipedia)

NAND memories

NAND flash architecture was introduced by Toshiba in 1989. These memories are accessed much like block devices such as hard disks or memory cards. Each block consists of a number of pages. The pages are typically 512[9] or 2,048 or 4,096 bytes in size. Associated with each page are a few bytes (typically 1/32 of the data size) that can be used for storage of an error correcting code (ECC) checksum.

Typical block sizes include:

32 pages of 512+16 bytes each for a block size of 16 KB

64 pages of 2,048+64 bytes each for a block size of 128 KB[10]

64 pages of 4,096+128 bytes each for a block size of 256 KB[11]

128 pages of 4,096+128 bytes each for a block size of 512 KB.

While reading and programming is performed on a page basis, erasure can only be performed on a block basis.[12] Another limitation of NAND flash is data in a block can only be written sequentially. Number of Operations (NOPs) is the number of times the sectors can be programmed. So far this number for MLC flash is always one whereas for SLC flash it is four.[citation needed]

NAND devices also require bad block management by the device driver software, or by a separate controller chip. SD cards, for example, include controller circuitry to perform bad block management and wear leveling. When a logical block is accessed by high-level software, it is mapped to a physical block by the device driver or controller. A number of blocks on the flash chip may be set aside for storing mapping tables to deal with bad blocks, or the system may simply check each block at power-up to create a bad block map in RAM. The overall memory capacity gradually shrinks as more blocks are marked as bad.

NAND relies on ECC to compensate for bits that may spontaneously fail during normal device operation. A typical ECC will correct a one bit error in each 2048 bits (256 bytes) using 22 bits of ECC code, or a one bit error in each 4096 bits (512 bytes) using 24 bits of ECC code.[13] If ECC cannot correct the error during read, it may still detect the error. When doing erase or program operations, the device can detect blocks that fail to program or erase and mark them bad. The data is then written to a different, good block, and the bad block map is updated.

Most NAND devices are shipped from the factory with some bad blocks which are typically identified and marked according to a specified bad block marking strategy. By allowing some bad blocks, the manufacturers achieve far higher yields than would be possible if all blocks had to be verified good. This significantly reduces NAND flash costs and only slightly decreases the storage capacity of the parts.

When executing software from NAND memories, virtual memory strategies are often used: memory contents must first be paged or copied into memory-mapped RAM and executed there (leading to the common combination of NAND + RAM). A memory management unit (MMU) in the system is helpful, but this can also be accomplished with overlays. For this reason, some systems will use a combination of NOR and NAND memories, where a smaller NOR memory is used as software ROM and a larger NAND memory is partitioned with a file system for use as a non-volatile data storage area.

NAND is best suited to systems requiring high capacity data storage. This type of flash architecture offers higher densities and larger capacities at lower cost with faster erase, sequential write, and sequential read speeds, sacrificing the random-access and execute in place advantage of the NOR architecture.

Perhaps more details may be found if we have a part number:

http://memory-card-recovery.org/tag/nand-flash

http://www.samsung.com/global/busin...nmemory/downloads/moviNAND_mmc4_3_support.pdf

Perhaps some pro knows what the real specs are if knowing the exact type.