[Huawei P10 Guides, News, & Discussion] thermalboyz:
Check List below found online and might be useful for someone who interested to find out more.

SAMSUNG OR TOSHIBA Chips list below>>>>>>>>>>>>>>>>>>..

Samsung UFS flash memory is not a complete list (including examples of naming rules) by Mo Yun GS (April 25, 2017)

Interface protocol: UFS2.0, HS-G2 2-Lane (5.8Gbps)

KLUCG4J1BB-B0B1 MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

KLUDG8J1BB-B0B1 MLC UFS2.0 128GB 11.5x13x1.2 FBGA153

Interface protocol: UFS2.0, HS-G3 1-Lane (5.8Gbps)

KLUAG2G1CE-B0B1 MLC UFS2.0 16GB 11.5x13x1.0 FBGA153

KLUBG4G1CE-B0B1 MLC UFS2.0 32GB 11.5x13x1.0 FBGA153

KLUCG4J1CB-B0B1 MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

KLUDG8J1CB-B0B1 MLC UFS2.0 128GB 11.5x13x1.2 FBGA153

Interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)

KLUCG4J1EB-B0B1 MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

KLUDG8J1EB-B0B1 MLC UFS2.0 128GB 11.5x13x1.2 FBGA153

KLUEG8U1EM-B0B1 TLC UFS2.0 256GB 11.5x13x1.2 FBGA153

Interface protocol: UFS2.1, HS-G3 2-Lane (11.6Gbps)

KLUCG4J1ED - B0C1 MLC UFS2.1 64GB 11.5x13x1.0 FBGA153

KLUDG8V1EE-B0C1 TLC UFS2.1 128GB 11.5x13x1.0 FBGA153

KLUEG8U1EM-B0C1 TLC UFS2.1 256GB 11.5x13x1.0 FBGA153

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Naming rules for example: KLUDG8V1EE-B0C1 (UFS2.1, TLC)

Character 1: K: "Samsung Memory" Samsung memory (shipping / flash)

Character 2: L: "MOVI NAND, MCP" flash memory or MCP product

Character 3: U: flash interface type is "UFS"

Character 4-5 DG: Memory density is 128GB (AG for 16GB, BG for 32GB, CG for 64GB, EG for 256GB)

Character 6: 8: Composition is NAND8 + Microcontroller package contains 8 NAND chips and microcontrollers

Character 7: V: NAND Small Clasification (Type or Density) is TLC The flash architecture is TLC

Character 8: 1: Supply voltage, mode voltage, mode

Character 9: E: Controller version controller version (related to HS-Gx x-Lane)

Character 10: E: Flash type E-die flash particle type E-die (M, A, B, C, D, E, F, G)

Character 11: -: hyphen

Character 12: B: Package type is FBGA lead-free, halogen-free lead-free halogen-free FBGA package

Character 13: 0: Revision None The original version is not modified

Character 14: C: Speed ​​high speed (related to interface protocol version)

Character 15: 1: Normal sample Normal sample

Where the 7th character is related to the flash architecture:

1) SLC (Single-Level Cell) is 1 or 9;

2) TLC (Triple-Level Cell) is V, U or Z;

3) MLC (Multi-Level Cell) is A, B, C, D, E, G, J, K and so on

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Toshiba UFS flash memory is not a complete list (including naming rules example) by ink rhyme GS (April 25, 2017)

First Generation (January 2013) 24nm Process, Interface Protocol: UFS1.1, HS-G2 1-Lane (2.9Gbps)

THGLF0G9B8JBAIE MLC UFS1.1 64GB 12x16x1.2 FBGA169

Second generation (April 2014) 19nm process, interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)

THGLF2G8C4KBADR MLC UFS2.0 32GB 11.5x13x1.0 FBGA153

THGLF2G9C8KBADG MLC UFS2.0 64GB 11.5x13x1.2 FBGA153

Third generation (before December 2015 *) 15nm process, interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)

THGLF2G8J4LBATR MLC UFS2.032GB 11.5x13x1.0 FBGA153

THGLF2G9J8LBATR MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

Fourth generation (before March 2016) 15nm process, interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)

THGBF7G8K4LBATR MLC UFS2.0 32GB 11.5x13x1.0 FBGA153

THGBF7G9L4LBATR MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

THGBF7T0L8LBATA MLC UFS2.0 128GB 11.5x13x1.04 FBGA153

Fifth generation (October 2016) 15nm process, interface protocol: UFS2.1, HS-G3 2-Lane (11.6Gbps)

THGAF4G8N2LBAIR MLC UFS2.1 32GB 11.5x13x1.0 FBGA153

THGAF4G9N4LBAIR MLC UFS2.1 64GB 11.5x13x1.0 FBGA153

THGAF4T0N8LBAIR MLC UFS2.1 128GB 11.5x13x1.0 FBGA153

* Accurate start delivery time not found

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Naming rules for example: THGAF4G9N4LBAIR (UFS2.1, 15nm, MLC)

Character 1: T: "Toshiba" Toshiba

Character 2: H: "Multi-chip" multi-chip package

Character 3: G: Symbol of Type of flash type "IC" integrated circuit

Character 4: A: Symbol of "voltage type" indicates the supply voltage type

Character 5: F: NAND Interface type is "UFS" Flash interface type is UFS

Character 6: 4: Unique code of controller revision The built-in controller version is 4

Character 7: G: Memory density calculated by G bits The capacity is represented by G bits

Character 8: 9: Memory density is 2 ^ 9 = 512G bits (64GB) 2 of 9th power, 512G bits, ie 64GB

Character 9: N: Symbol of "cell level" (cell technology) architecture for the MLC

Character 10: 4: Number of stacked chips is 4 package contains the number of stacked chips 4

Character 11: L: Symbol of "Design rule" 15nm (K for 19nm, J for 24nm) Process is 15nm

Character 12-13: BA: Package type is BGA lead free and halogen free lead free halogen free BGA package

Character 14: I: Symbol of Mode "industrial version" -25ºC to 85ºC Industrial version

Character 15: R: Symbol of "Package size" 11.5mmx13mmx1.0mm package size

Among them, the first nine characters and flash memory architecture:

1) SLC (Single-Level Cell) is S or H;

2) DLC (Dua-Level Cell) is D or E [infrequent];

3) TLC (Triple-Level Cell) is T or U;

4) MLC (Multi-Level Cell) is B, C, J, K, L, N and so on.