what is ldmos
LDMOS. The Laterally Diffused MOSFET (LDMOS) is an asymmetric power MOSFET designed for low on-resistance and high blocking voltage. These features are obtained by creating a diffused p-type channel region in a low-doped n-type drain region. typical structure is presented in Figure 7.8.1. The device can be fabricated by diffusion as well as ion implantation. The p-type region is formed first, followed by shallow p + and n + regions. The n + regions provide both source and drain contact regions.
5. References. 1. LDMOS. LDMOS (laterally diffused Metal-Oxide-Semiconductor) is one of the most widely used power MOS devices. As the name implies, a lateral current is created between drain and source. A cross-section of a LDMOS device used in RF applications can be seen in Figure 1.To understand how the device functions, we should first consider differences between a regular MOS and a LDMOS. One of the things we first notice is P+ Threshold adjust (beside P+ Sinker). cross-section of a LDMOS device used in RF applications can be seen in Figure 1. To understand how the device functions, we should first consider differences between a regular MOS and a LDMOS. One of the things we first notice is P+ Threshold adjust (beside P+ Sinker).