A 900MHz 1.25dB NoiseFigure DifferentialOutput LNA with 12.5 dBmW FoM A 900 MHz LNA with balanced output and 12.5dBmW figureofmerit (FoM) is presented. The architecture exploits the benefits of both inductive degeneration and noise cancellation which helps in achieving the optimum noise figure (NF). The LNA has a wideband gain and input matching is achieved using an offchip inductor. Inductive degeneration and quality factor (Q) of the input matching network improves the NF of the LNA (with wideband gain) at a spot frequency. The transconductance of the coreLNA is fixed by a constantgm circuit. Simulation results show that the LNA has a minimum NF of 1.25 dB at 900 MHz, transmission gain (S 21 ) of 33 dB, S 11  of xe2x88x9219 dB at 900 MHz, IIP2 of 2 dBm, and IIP 3  of xe2x88x9215 dBm. The LNA, designed in 180 nm CMOS, consumes 4.4 mA from a 1.8 V supply and has a negligible differentialgain error of 0.138 dB, at the input matched frequency. A 2.5dB NF balanced passive mixer on top of the LNA is also implemented.

A 0.91.82.4GHzreconfigurable LNA with Inductor and Capacitor Tuning for IoT Application in 65nm CMOS This paper presents a 0.91.82.4GHzreconfigurable low noise amplifier (LNA) for IoT applications. An input transformer consisting of a primary coil and two secondary coils is proposed in the LNA to ensure impedance matching in three bands. Mutual inductance enhancement scheme is also proposed to boost the inductance Q value and improve circuit performance without power overhead. The proposed LNA is designed and simulated in TSMC 65nm CMOS with an area of 1.32mm2. The postlayout simulations show that the presented LNA achieves 14.51617.5dB voltage gain and 2.82.52.0dB noise figure at 0.91.82.4GHz. The S11 and the input P1dB are xe2x88x928.8119.6dB and xe2x88x92111719dBm at 0.91.82.4GHz respectively. The LNA power consumption is 4mW from a 1.2V power supply.