A pnCoupled Superjunction IGBT for High Switching Speed In this paper, a pncoupled superjunction(SJ) IGBT is proposed. It is a fourterminal device composed of a nIGBT and a pIGBT which couples with each other via the SJ pillar. Simulations on its fabrication process and electrical performances are carried out via Sentaurus TCAD. Comparisons with conventional fieldstop IGBT (FS IGBT) and SJ IGBT are also made. Using the proposed structure, carrier density distribution at the on state can be well optimized. Also, no nbuffer layer is employed and all the carriers stored in the on state can be extracted during turnoff period by electric field. Consequently, the proposed structure is able to deliver superior turnoff characteristics. Simulation results demonstrate that the turnoff energy loss is only 0.22mJcm2when V CEsat  is 1V, which is a significant improvement compared with the conventional FS IGBT (1.2mJcm2) and SJ IGBT (0.34mJcm2).

Simulation Study of Trench IGBT with DiodeClamped PWell for High dIdt and dVdt Controllability In this paper, a novel trench insulated gate bipolar transistor (TIGBT) with diodeclamped Pwell is proposed and investigated by simulation. Compared with the conventional TIGBT with floating Pwell, the Pwell of the proposed TIGBT is connected with the cathode through two seriesconnected diodes. In the onstate, for the proposed TIGBT, as the anode voltage is not enough to turn on the two diodes, the holes will be accumulated at the cathode side to enhance the electron injection. In the turnon process, the Pwell potential (VA) is clamped at a low value by the diodes, decreasing the Miller capacitance and the reverse gate charging current from the Pwell region to the gate. Therefore, the gate resistance has better controllability on dV cE dt and dI cE dt due to a lower displacement current (I G _ dis ) for the proposed TIGBT. Besides, the turnoff energy loss  E_textoff  is reduced owing to the extra hole path formed by the Pwell region. TCAD simulation indicates that, compared with the conventional TIGBT, the Miller capacitance is reduced by 56%. The dV cE dt and dI CE dt of the proposed TIGBT are reduced by 22.1% and 77.6%, respectively. Moreover, the E off of the proposed one is also reduced by 57.2%.