An assessment of RTNinduced threshold voltage jitter Power consumption is a key issue especially for the edge devicesunits in an IoT system. Lowering operation voltage is an effective way to reduce power. As the overdrive voltage, VgVth, becomes smaller, the device is more vulnerable to threshold voltage jitters. One source for the jitter is Random Telegraph Noises (RTN), which cause a fluctuation in both drain current, xcex94Id, and threshold voltage, xcex94Vth. Early works on RTN were focused on measuring xcex94Id and then evaluate xcex94Vth from xcex94Idgm, where gm is transconductance. The accuracy of xcex94Vth obtained in this way is not known. The objective of this work is to assess its accuracy by comparing it with the xcex94Vth directly measured from pulse IdVg. It will be shown that the correlation between these two is poor, so that xcex94Vth must not be evaluated from xcex94Idgm. This is caused by the devicespecific localized current distribution near the threshold.

Synergistic Effect of BTI and Process Variations on Impact and Monitoring of Combination Circuit With the technology node scaling down, aging effect and process variations have become the most critical reliability issues for integrated circuit. In this paper, the influence of BTI effect and process variation on threshold voltage is analyzed. Then, the delay of logic gate and the change of subthreshold current are deduced from the change of threshold voltage. Finally, the logic gate and ISCAS85 circuit are simulated by HSPICE in PTM 45nm model. Simulation results show the relationship between delay and subthreshold current with aging time, which can be used to predict the degradation of circuit parameters. The change of circuit delay can be quickly monitored by measuring subthreshold current.