An Accurate HighVoltage SupplyReferred LowImpedance ReferenceVoltage for Efficiency Enhancement of the HighSide Switching Process This paper presents the design of a highvoltage supplyvoltagereferred lowpower lowimpedance bandgapreference (HVBGreference) as a highside current sink and the associated highside (HS) driver of a switch mode power converter. By accurately driving the gate of the HS switch, the losses and device stress can be improved significantly. The minimum reference voltage  minV_boldsymbolref,boldsymbolLI(T)  has a mean value of 19.26 V and a standard deviation of 67.4 mV over process and mismatch variations and the full temperature range of xe2x88x9240 xc2xb0C to 140 xc2xb0C. Further, the lowimpedance reference is able to supply and sink peak currents up to 35 mA with a low DC supply current of  31.6 mu mathrmA  with no external components needed. The reference occupies a die area of 0.051 mm2 in a  0.18 mumathrmm  process.

High precision low power CMOS bandgap for RFID In this paper, a low power high precision bandgap reference with a thirdorder temperature compensation and a high slope positivetemperature coefficient voltage are designed using a SMIC 180 nm BiCMOS process. The structure of positive temperature coefficient current and negative temperature coefficient current subtraction are used to obtain a high slope positive temperature coefficient current, which is more convenient for sampling of the rear circuit. The simulation show when the temperature is changed within the range of xe2x88x9225 to 100 xc2xb0C, the temperature coefficient of the output reference voltage is 3.8ppmxc2xb0C, the slope of the PTAT voltage is 5.13mVxc2xb0C the PSRR at low frequency is xe2x88x9262dB. At a power supply voltage of 1.8V, the overall power consumption is 50uW.