Predicting Interferences of Switching High Voltage Devices on MixedSignal Designs Interferences between different system components are a major source of system degradation in high voltage integrated circuits (ICs). Thereby, substrate coupling plays an important role. Silicononinsulator wafers can reduce the substrate coupling between components of different voltage domains due to the buried oxide (BOX). However, switching high voltage quasivertical doublediffused MOS transistors have their drain close to the BOX and can introduce a substrate current into the handle wafer. The influences of substrate fluctuations on a capacitive sensor excitation are investigated. A substrate network and its automated extraction are presented for the prediction of interferences using SPICE simulations. It can validate the measured influences of a fully integrated threestate inverter with up to xc2xb1300 V fabricated in a  1 boldsymbolmumathbfm  process on a spread spectrum clock generator. With the proposed method, high voltage interferences on the IC can be predicted well in prior to fabrication.

Synergistic Effect of BTI and Process Variations on Impact and Monitoring of Combination Circuit With the technology node scaling down, aging effect and process variations have become the most critical reliability issues for integrated circuit. In this paper, the influence of BTI effect and process variation on threshold voltage is analyzed. Then, the delay of logic gate and the change of subthreshold current are deduced from the change of threshold voltage. Finally, the logic gate and ISCAS85 circuit are simulated by HSPICE in PTM 45nm model. Simulation results show the relationship between delay and subthreshold current with aging time, which can be used to predict the degradation of circuit parameters. The change of circuit delay can be quickly monitored by measuring subthreshold current.