LowCost Microwave Noise Source Exploiting a BJT with Junctions in Avalanche Regime In this work the feasibility of a lowcost microwave noise source compatible with commercial BiCMOS technologies is discussed. The proposed circuit exploits the avalanche noise generated by the baseemitter junction of a Bipolar Junction Transistor (BJT) in reverse breakdown. The collector terminal is not used and thus it is left open. The feasibility study is carried out exploiting the BFP640 device, a packaged BJT realized with a  f_T 70  GHz process. A breakdown current of about 3 mA is obtained by reverse biasing the baseemitter junction at 4.5 V. In these conditions the Excess Noise Ratio (ENR) of the source is greater than 20 dB from 0.5 to 4.5 GHz.

Design of HVCMOS Detectors in BCD Technology with Noise and Crosstalk Measurements This paper presents the design and implementation of a particle detector in a BipolarCMOSDMOS (BCD) 180 nm technology. The design has a substrate potential of xe2x80x94 50 V and supply voltage of 1.8 V. Size of the unit pixel sensor is  250times 50 mumathbfm2 . The chip consists of an array of  47times 6  pixels including the signal processing circuitry. The total chip area is  3.3 times 4.4 mathbfmm2 . The complete signal processing circuitry is hosted inside the diode sensor to achieve 100% fill factor. The chip consists of 106 inputoutput pads, including the pads for supplies viz. xe2x80x94 50 V, 0 V and 1.8 V. The measurement results are presented to validate the noise and crosstalk models of the designed detector. The comparison shows an average mismatch of 2.65  mumathbfV  for the crosstalk voltages in a range of 3000 to 7000 injected electrons. The circuit noise has an average mismatch of  1.23times 1010 mathbfV2mathbfHz  between the analytical and the measurement results for a frequency range of 100 kHz to 22 MHz. The analog processing circuitry provides a measured voltage gain of 33.3 dB at 100 kHz of input frequency.