Performing MemristorAided Logic (MAGIC) using STTMRAM Modern computers suffer from a limited data transfer rate between the memory and the processing units. One of the attractive potential solutions to overcome this bottleneck is to combine processing and memory by performing computing in the same location where the data is stored. Processinginmemory (PIM) has been demonstrated by memristoraided logic (MAGIC) operations using resistive random access memory (RRAM) memristive devices within crossbar arrays. Nevertheless, RRAM devices are relatively slow and suffer from limited endurance. Spintransfer torque magnetoresistive random access memory (STTMRAM) is another memristive technology, which is faster and has practically unlimited endurance and is therefore considered to be an attractive technology for cachelevel memories. In this paper, we demonstrate MAGIC operations within an STTMRAM array by supplying voltages suitable to achieve the current required for MRAM device switching. The proposed circuit was evaluated in SPICE simulations with the GlobalFoundries 22nm CMOSMRAM process, including Monte Carlo simulations to verify the proposed design in the presence of process variation and device mismatch. The circuit showed more than 90% chance of functioning for the 1 1 and 0 0 input cases while it was about 85% correct for the 0 1 case.

Crossbar Memory Architecture Performing Memristor Overwrite Logic The nonvolatile resistive state of memristor and the ease of controlling this state have triggered its usage in the design of nonvolatile memories as well as logic design applications. The memristor based material implication (IMPLY) and memristor aided logic (MAGIC) have been recently presented as new methods to achieve logic computations inside memristive memory architectures. However, these methods are still surrounded by several design constraints. In this context, we present new design for memristive memories with an added computational capabilities. These capabilities are exclusively based on our proposed logic design style, namely Memristor Overwrite Logic (MOL) which is fully digital and tolerant against memristor technology variations.