A Low Onstate Voltage and Large Current Capability Thin SOILIGBT with Trench NMOS In this paper, a novel thin silicononinsulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by numerical simulation. In such a device, several trench gates and an Nburied layer under the Pbase are employed to form multiple trench NMOS, which increases the effective channel width. Consequently, the onstate voltage (Von) is reduced, and the saturation current is distinctly enhanced. Moreover, because the Nburied layer can be pinched off in the blocking state, the proposed device exhibits an approximate breakdown voltage (BV) with the conventional one. The simulation results demonstrate that the saturation current and the Von of the proposed device are increased by 316.5% and decreased by 21.7%, respectively. Additionally, an excellent tradeoff between the Von and the turnoff energy loss (E off ) is achieved.

Simulation Study of Trench IGBT with DiodeClamped PWell for High dIdt and dVdt Controllability In this paper, a novel trench insulated gate bipolar transistor (TIGBT) with diodeclamped Pwell is proposed and investigated by simulation. Compared with the conventional TIGBT with floating Pwell, the Pwell of the proposed TIGBT is connected with the cathode through two seriesconnected diodes. In the onstate, for the proposed TIGBT, as the anode voltage is not enough to turn on the two diodes, the holes will be accumulated at the cathode side to enhance the electron injection. In the turnon process, the Pwell potential (VA) is clamped at a low value by the diodes, decreasing the Miller capacitance and the reverse gate charging current from the Pwell region to the gate. Therefore, the gate resistance has better controllability on dV cE dt and dI cE dt due to a lower displacement current (I G _ dis ) for the proposed TIGBT. Besides, the turnoff energy loss  E_textoff  is reduced owing to the extra hole path formed by the Pwell region. TCAD simulation indicates that, compared with the conventional TIGBT, the Miller capacitance is reduced by 56%. The dV cE dt and dI CE dt of the proposed TIGBT are reduced by 22.1% and 77.6%, respectively. Moreover, the E off of the proposed one is also reduced by 57.2%.