BodyBias Techniques in CMOS 22FDXxc2xae for MixedSignal Circuits and Systems 22FDXxc2xae, a 22nm CMOS fullydepleted silicon on insulator technology (FDSOI), provides both, a unique wideband bodybias tuning range, as well as reduced junction capacitances, enabling new circuit architectures across analog and mixedsignal platforms. With a threshold voltage sensitivity of around 70mV per Volt and a bodybias tuning range of xe2x88x922V, 22FDXxc2xae gives designers a competitive additional degree of freedom while incorporating transistor transit frequencies exceeding 400GHz. After briefly introducing 22FDXxc2xae, this paper provides an overview of the most recent FDSOI design techniques in the field of mixedsignal circuits utilizing static and or dynamic bodybiasing approaches. Given the strong threshold voltage tuning, bodybiasing allows e.g. to compensate process, voltage and temperature variations. This paper focuses on 22FDXxc2xae being a strong innovation catalyst in data converter architectures. First, a 5bit 18.5GSs flash ADC is presented, omitting the powerhungry resistive ladder by generating accurate thresholdvoltage offsets within the comparators. Then, the capability of dynamic bodybiasing is evaluated based on a 10GSs track and hold circuit (obtaining 49dBc SFDR at fs2) simultaneously improving both, a low onresistance and a high offresistance. Furthermore, a 28GHz ring oscillator utilizing a single, shared well for pMOS and nMOS devices is presented. Here, bodybiasing allows to fully compensate temperature effects. Finally, a bodybiasing controlled DAC linearization technique for SigmaDelta modulators, as well as a DAC driver termination impedance control for a 6GSs 10bit automotive Ethernet SSTDACDriver are presented.

A 0.6 V Current Reference Based on the MOSFET ForwardBodyBiased ZTC Condition This work presents a self biased current reference circuit based on the MOSFET Zero Temperature Coefficient (ZTC) condition. To achieve lower supply voltage ( V_textDD ) operation, the proposed circuit employs forward body biasing technique to decrease the MOSFET ZTC biasing point. In addition, a bodydriven pseudo differential Operational Transconductance Amplifier (OTA) is used to further reduce the minimum supply voltage. From transitorlevel simulations, the current reference is predicted to have an Effective Temperature Coefficient ( TC_texteff ) of 65 ppmxc2xb0C from xe2x88x9255 to 125 xc2xb0C and a fabrication sensitivity of  sigmamu  6.5 % , including process and mismatch variability. The power supply sensitivity is around 0.75% V for this new reference.