Tunable Wideband Amplifier at 180 GHz with 22 dB Gain and 40 GHz Bandwidth in 130 nm SiGe This work presents an integrated, reconfigurable wideband amplifier for mmwave applications. An internal tunable matching network enables dualband gain compensation to achieve a flat frequency response. This is realized using individually biased and matched diodes as variable load for a 90xc2xb0 hybrid coupler. The approach is similar to a reflectiontype phase shifter, resulting in the ability to change the effective input impedance throughout capacitive, resistive and inductive behavior. The circuit is designed for a center frequency of 180 GHz (Gband) and offers, after optimal tuning, a peak gain of 22 dB and a bandwidth of 41 GHz. The total power consumption is 65 mW, with an output referred 1dB compression point of 1 dBm and an efficiency of 1.9%. The final chip occupies an area of 0.65 mm2 and is implemented in a 130 nm SiGe BiCMOS process, offering a maximum oscillation frequency f max  of 450 GHz.

Design of Integrated Control Circuits for mmWave Phased Arrays in 55nm BiCMOS This paper presents the design of different control circuits for integrated Dband phasedarray transceivers, implemented using a 55nm BiCMOS process. An SPI slave controller is first presented, which is able to control a bank of sixteen 8bit registers. The design of an integrated ringoscillator based clock generator is then described, which oscillates at 44 MHz. Finally, a currentsteering 8bit DAC is presented, which provides a current of 01.8 mA with a DNL lower than 0.9 LSB. The DAC can be used to generate bias currents for mmwave phase shifters and amplifiers, as well as to generate selftest signals at a sampling frequency of up to 100 MSPS. The clock and DAC have been implemented on a test chip that occupies 0.5 mm xe2xa8xaf 0.4 mm.