Design of A Dband TransformerBased Neutralized ClassAB Power Amplifier in Silicon Technologies Highspeed wireless communication in the post5G era will likely make use of frequency bands above 100 GHz. This poses challenges to IC design in silicon technologies. This paper presents a general comparison of a Dband transformerbased ClassAB power amplifier with crosscoupled capacitive neutralization in three advanced silicon technologies: bulk CMOS, fullydepleted SOI, and SiGe BiCMOS. Each of these technologies has its own prospects and disadvantages. A comparison of performance parameters is made such as the maximum available power gain G max , saturation power P sat , drain efficiency DE and power added efficiency PAE after properly sizing the transistors to reach an optimum load resistance Ropt. Further, a 140 GHz 4stage power amplifier is fabricated in a 28 nm bulk CMOS process as a reference. Its design considerations, layout parasitics analysis, and layout techniques are discussed as well.

Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mmwave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30% poweradded efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fullydepleted SiliconOnInsulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAsPA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.