DualThreshold IndependentGate TFET with Triside Tunneling Currently, most tunneling field effect transistors (TFETs) can only be tunneled through an across section of the device, so that the turnon current  (I_ON)  is not large enough. In this paper, we propose a new TFET device named as triside tunneling independentgate TFET (TSIGTFET). The proposed TFET makes the device can tunnel through three across surfaces. Compared with the conventional dualgate TFET (DGTFET), the proposed TSIGTFET increases greatly the tunneling area, and thus improves the  I_ON  effectively. In addition, independent gate devices with strong coupling between back and front gates can generate different logic by using different device threshold voltages, which can reduce the number of transistors used in circuits. The characteristics of the TSIGTFET are simulated by TCAD Silvaco. The results show that the proposed lowthreshold TSIGTFET has xe2x80x9cORxe2x80x9d logic function, while highthreshold TSIGTFET has xe2x80x9cANDxe2x80x9d logic function.

Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model Negative capacitance FET (NCFET) is one of the most promising steepsubthreshold slope (SS) transistors. Thanks to the discovery of ferroelectric HfO 2  (FEHfO 2 ), NCFET has been getting more attentions as a highly manufacturable solution. Since the proposal of NCFET and discovery of FEHfO2, there have been many experimental demonstrations of steep SS with NCFET. However, the physical mechanism of steep SS has not been fully understood yet, and confident explanations have not been given to these experimental results. In this paper, we report our recent progress of theoretical and experimental studies toward comprehensive understanding of NCFET regarding steep SS behavior, reverse DIBL and negative differential resistance (NDR). Transient NC theory that we explore is able to consistently explain some class of previously reported experimental results. This paper will help to guide further NCFET research activities.