Design of HVCMOS Detectors in BCD Technology with Noise and Crosstalk Measurements This paper presents the design and implementation of a particle detector in a BipolarCMOSDMOS (BCD) 180 nm technology. The design has a substrate potential of xe2x80x94 50 V and supply voltage of 1.8 V. Size of the unit pixel sensor is  250times 50 mumathbfm2 . The chip consists of an array of  47times 6  pixels including the signal processing circuitry. The total chip area is  3.3 times 4.4 mathbfmm2 . The complete signal processing circuitry is hosted inside the diode sensor to achieve 100% fill factor. The chip consists of 106 inputoutput pads, including the pads for supplies viz. xe2x80x94 50 V, 0 V and 1.8 V. The measurement results are presented to validate the noise and crosstalk models of the designed detector. The comparison shows an average mismatch of 2.65  mumathbfV  for the crosstalk voltages in a range of 3000 to 7000 injected electrons. The circuit noise has an average mismatch of  1.23times 1010 mathbfV2mathbfHz  between the analytical and the measurement results for a frequency range of 100 kHz to 22 MHz. The analog processing circuitry provides a measured voltage gain of 33.3 dB at 100 kHz of input frequency.

Onchip resistance configuration by subthreshold MOSFETarray for ultra weak current sensing In this work, we propose a method to configure an ultrahigh resistance of 1Gxcexa9 or more on a chip, which is used for IV conversion circuit, in order to detect ultraweak currents of several pA  nA. In our method, a desired resistance value is realized by connecting MOSFETs in the cutoff region in seriesparallel. The influence of IV conversion characteristic, temperature characteristic, area due to the difference in the number of stages of seriesparallel connection is confirmed by simulation. Hence, an appropriate configuration method is derived. We also compare with the existing Poly resistance and discuss the practicality of proposed MOSFET resistance.