An UltraBroadBand LowDistortion HighEfficiency ClassD Power Amplifier in 130nm CMOS Technology This paper presents a novel design of an ultrabroadband classD power amplifier (PA). The proposed architecture is based on the concept of the ripple buck converter after employing some modifications to facilitate supporting bandwidths up to tens of MHz. The input frequency range covered using the proposed classD PA is from 0.5MHz up to 30MHz. A wideband transformer has been used to convert the differential outputs of the classD PA to singleended load. The design has been implemented and fabricated using a CMOS 0.13xc2xb5m technology. It occupies an active area of 0.836mm2 and operates from a single 1.2V supply. The measurement results validates the functionality of the proposed classD PA with good linearity and peak efficiency of 58% at 140mW of output power. This has been achieved using few offchip passive components.

Design of A Dband TransformerBased Neutralized ClassAB Power Amplifier in Silicon Technologies Highspeed wireless communication in the post5G era will likely make use of frequency bands above 100 GHz. This poses challenges to IC design in silicon technologies. This paper presents a general comparison of a Dband transformerbased ClassAB power amplifier with crosscoupled capacitive neutralization in three advanced silicon technologies: bulk CMOS, fullydepleted SOI, and SiGe BiCMOS. Each of these technologies has its own prospects and disadvantages. A comparison of performance parameters is made such as the maximum available power gain G max , saturation power P sat , drain efficiency DE and power added efficiency PAE after properly sizing the transistors to reach an optimum load resistance Ropt. Further, a 140 GHz 4stage power amplifier is fabricated in a 28 nm bulk CMOS process as a reference. Its design considerations, layout parasitics analysis, and layout techniques are discussed as well.