A CMOS HalfBridge GaN Driver with 630V Input Voltage Range and 5.4ns Propagation Delay In this paper, a halfbridge Gallium Nitride (GaN) driver is proposed. By integrating a wide input voltage range linear regulator (LDO), which is the power supply of the GaN driver, the input voltage of the driver can extend to a wide range of 6xe2x80x9330 V. In order to reduce the propagation delay, a highspeed level shifter with subnanosecond delay is proposed. A dead time generator is designed to introduce a dead time less than 1 ns, which can minimize the reverse conduction loss. In addition, a separate drive output is designed to adjust the gate resistance of the GaN transistors. The designed GaN driver has been designed in 0.18xc2xb5m CMOS technology, and the postlayout simulation results show it can achieve a low propagation delay of 5.4 ns.

Smart Gate Driver ICs for GaN Power Transistors GaN power transistors are well suited in high frequency, high temperature and high powerdensity applications. This paper investigates different gate driver designs for GaN power transistors, including fundamental driving concerns, current commercial products, popular gate driving features, and design trends for the suppression of gate node ringing. Many smart gate drivers offer features such as intelligent onchip CPU for flexible digital control, adjustable gate voltage levels, multistage driving speed for slewrate control, precise timing control, current sensing capability for closeloop regulations, and active gate driving mode with continuous optimized deadtime. This paper provides an overview to modern gate driver design trends and challenges for GaN power transistors.