Comparison of AlN vs. SIO2LiNbO3 Membranes as Sensitive Elements for the SAWBased Acceleration Measurement: Overcoming the Anisotropy Effects We propose the use of aluminum nitride (AlN) membranes acting as sensitive elements for the surface acoustic wave (SAW)based acceleration measurement. The proposed solution is compared against existing prototypes based on the use of quartz (SiO2)lithium niobate (LiNbO3) membranes that are characterized by extensive anisotropic properties. Using COMSOL Multiphysics 5.4 computer simulations we show explicitly that sensitive elements based on less anisotropic AlN membranes overcome both the low sensitivity limitations of SiO2 and low temperature stability of LiNbO3. Moreover, AlN membranes exhibit nearly double the robustness against irreversible mechanical deformations when compared against SiO2, which in turn allows for further 1.5fold sensitivity enhancement over LiNbO3 based sensors. Taking into account their acceptable frequency characteristics, we thus believe that the AlN membranes are a good candidate forsensitive elements especially for high acceleration measurements.

Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Eulerxe2x80x93Bernoulli Beam Theory Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically induced stresses can be measured electrically. Scandium aluminium nitride gained a lot of attraction in the last few years due to its enhanced piezoelectric properties. Its usage as resonantly driven microelectromechanical system (MEMS) in such sensors is accompanied by a manifold of influences from crystal growth leading to impacts on the electrical and mechanical parameters. Usual investigations via nanoindentation allow a fast determination of mechanical properties with the disadvantage of lacking the access to the anisotropy of specific properties. Such anisotropy effects are investigated in this work in terms of the Youngxe2x80x99s modulus and the strain on basis of a MEMS structures through a newly developed fully automated procedure of eigenfrequency fitting based on a new nonLorentzian fit function and subsequent analysis using an extended Eulerxe2x80x93Bernoulli theory. The introduced procedure is able to increase the resolution of the derived parameters compared to the common nanoindentation technique and hence allows detailed investigations of the behavior of magnetoelectric sensors, especially of the magnetic field dependent Youngxe2x80x98s modulus of the magnetostrictive layer.