A design of a wideband balanced limited low noise amplifier Based on the GaAs PIN (positive intrinsic negative) diode and HEMT (high electron mobility transistor) technology, a 520GHz wideband balanced limited LNA (low noise amplifier) chip was presented. The chip has the characteristics of wideband, low noise, high gain and high power capacitance. The chip includes a 3dB coupler, limiter and LNA. The test results of the chip show that in the frequency range of 6GHz to 20GHz, the small signal gain of the chip is higher than 26dB, noise figure is less than 2.8 dB, and the typical value is 2dB, both the input and output VSWR (voltage standing wave ratio) are better than 1.3:1, and the output power is more than 6dBm at 1dB compression. The static current is 30mA when the LNA is supplied with 5V. And the power capability is 15W (13GHz, input pulse power: pulse width 400us, duty cycle 30%).

The Design and Performance Comparison of Wide Bandwidth LNA with Three Different Kinds of Technologies A low noise amplifier (LNA) is the first active stage in a receiver, which plays a key role in the entire receiver. In this paper, LNAs with three different kinds of devices  enhancement mode (Emode) Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT), depletion mode (Dmode) Gallium Nitride (GaN) high electron mobility transistor HEMT, and SiliconOnInsulator (SOI) CMOS are designed, simulated, analyzed and compared. For a fair comparison, the LNAs of the same circuit topology are built up with noiseless matching components, and their performances are compared in the terms of both important specifications and a universal Figure of Merits (FOM). The simulation results show that: the LNA with using Emode GaAs PHEMT achieves the lowest noise figure (NF) of 0.51 dB while the SOICMOS gets the best FOM of among the three devices. To our limited knowledge, this paper is one of few attempts to compare devicesu0027 capabilities in building up wide bandwidth LNAs with resistor feedback networks.