A High Linearity Low Power 130 nm CMOS LNA for Medical Ultrasound Imaging In this paper, a frontend high linearity lownoiseamplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, xe2x80x9cderivative superpositionxe2x80x9d (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37xc2xb0C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP 3 ) value of xe2x88x924.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of  189.9 mu mathbfW . The proposed design simultaneously achieved low power and high third order linearity.

TwoFold NoiseCancelling LowNoise Amplifier in 28nm CMOS In this paper, a lownoise amplifier (LNA) employing a crosscoupled commongate stage for wideband input matching is presented. By applying a twofold noise cancellation technique, the channel thermal noise of the first stage is removed which improves its noise performance and linearity. We perform a detailed analysis of the transfer function, noise and linearity, which are then verified in simulations in TSMC 28nm LP CMOS technology. The presented LNA achieves a power gain of 18.9xe2x80x9316 dB within 100 MHz up to 3.7 GHz and the input and output return loss of better than 10 dB. The IIP3 is 2.8 dBm and the noise figure (NF) ranges 1.582.4 dB over the band of interest with 24 mW DC power consumption.