TwoFold NoiseCancelling LowNoise Amplifier in 28nm CMOS In this paper, a lownoise amplifier (LNA) employing a crosscoupled commongate stage for wideband input matching is presented. By applying a twofold noise cancellation technique, the channel thermal noise of the first stage is removed which improves its noise performance and linearity. We perform a detailed analysis of the transfer function, noise and linearity, which are then verified in simulations in TSMC 28nm LP CMOS technology. The presented LNA achieves a power gain of 18.9xe2x80x9316 dB within 100 MHz up to 3.7 GHz and the input and output return loss of better than 10 dB. The IIP3 is 2.8 dBm and the noise figure (NF) ranges 1.582.4 dB over the band of interest with 24 mW DC power consumption.

A 900MHz 1.25dB NoiseFigure DifferentialOutput LNA with 12.5 dBmW FoM A 900 MHz LNA with balanced output and 12.5dBmW figureofmerit (FoM) is presented. The architecture exploits the benefits of both inductive degeneration and noise cancellation which helps in achieving the optimum noise figure (NF). The LNA has a wideband gain and input matching is achieved using an offchip inductor. Inductive degeneration and quality factor (Q) of the input matching network improves the NF of the LNA (with wideband gain) at a spot frequency. The transconductance of the coreLNA is fixed by a constantgm circuit. Simulation results show that the LNA has a minimum NF of 1.25 dB at 900 MHz, transmission gain (S 21 ) of 33 dB, S 11  of xe2x88x9219 dB at 900 MHz, IIP2 of 2 dBm, and IIP 3  of xe2x88x9215 dBm. The LNA, designed in 180 nm CMOS, consumes 4.4 mA from a 1.8 V supply and has a negligible differentialgain error of 0.138 dB, at the input matched frequency. A 2.5dB NF balanced passive mixer on top of the LNA is also implemented.