Zirconia quantum dots for a nonvolatile resistive random access memory device We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO2) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)ZrO2 (active layer)Ti (bottom) are fabricated using a facile spincoating method. The optimized device exhibits a high resistance statelow resistance state resistance difference (about 10 xcexa9), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 xc2xb5A). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO2 active layer. Experimental results show that the ZrO2 active layer is stacked compactly and has a low roughness (Ra4.49 nm) due to the uniform distribution of the ZrO2 QDs. The conductive mechanism of the AgZrO2Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.

Mos2 transistor gated by PMMAbased electrolyte for sub1 V operation The fabrication of highperformance MoS 2  transistor with a reliable gate dielectric layer remains an obstacle due to the lack of dangling bonds for dielectric deposition. Here, we demonstrate the employment of PMMAbased electrolyte film as the gate dielectric for Mos2 transistors. The electrolyte can be utilized to form high quality and uniform thin film by spincoating method at room temperature. Based on this PMMAbased electrolyte film, topgated Mos2 field effect transistors (FETs) are fabricated and exhibit exceptional device performance. The ultrahigh capacitance of the electrolyte, resulting from the formation of an electric double layer (EDL), yields a current onoff ratio about 105 and a steep subthreshold swing (90 mVdec) within a low supply voltage (1 V). Furthermore, we investigate the dynamic response of a Mos2 inverter with a switching speed over 100 Hz. This result provides the possibility for realizing low power logic circuit and nanoelectronics.