Electroplating of Multiple Materials in Parallel Using Patterned Gels with Applications in Electrochemical Sensing Electrodeposition is a versatile technique for the fabrication of electrodes in microelectroanalytical devices. Conductive but lowcost materials, such as copper, can be coated with functional yet highercost materials such as gold or silver using electrodeposition to lower the overall cost while maintaining functionality. When the electrodeposition of multiple materials is required, current methods use a multistep process that deposits one material at a time, which requires a significant amount of time and a significant number of steps. Additionally, they use a large volume of electrolytes suitable for coating large objects, which is wasteful and unnecessary for the prototyping or coating of microelectrodes with a small area. In this paper, a new method of electroplating is introduced in which we used gels to immobilize and pattern electroplating electrolytes on a substrate surface. Agarose, as an immobilizing medium, enables the immersion of the substrate in a common working electrolyte without crossmixing different electrolytes. We demonstrate the printing of jelly electrolytes by using spotdispensing or microfluidic flow. Xurographically patterned films laminated on the substrate function as a mask and confine the printed gels to desired locations. After printing, the substrate is placed in a common working electrolyte container, and multimaterial patterns are produced through the application of an electrical current in a single step.

Mos2 transistor gated by PMMAbased electrolyte for sub1 V operation The fabrication of highperformance MoS 2  transistor with a reliable gate dielectric layer remains an obstacle due to the lack of dangling bonds for dielectric deposition. Here, we demonstrate the employment of PMMAbased electrolyte film as the gate dielectric for Mos2 transistors. The electrolyte can be utilized to form high quality and uniform thin film by spincoating method at room temperature. Based on this PMMAbased electrolyte film, topgated Mos2 field effect transistors (FETs) are fabricated and exhibit exceptional device performance. The ultrahigh capacitance of the electrolyte, resulting from the formation of an electric double layer (EDL), yields a current onoff ratio about 105 and a steep subthreshold swing (90 mVdec) within a low supply voltage (1 V). Furthermore, we investigate the dynamic response of a Mos2 inverter with a switching speed over 100 Hz. This result provides the possibility for realizing low power logic circuit and nanoelectronics.