Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixelwise Trench Capacitor Memory Array In this paper, a prototype ultrahigh speed global shutter complementary metaloxidesemiconductor (CMOS) image sensor with pixelwise trench capacitor memory array achieving over 100 million frames per second (fps) with up to 368 record length by burst correlated double sampling (CDS) operation is presented. Over 100 Mfps high frame rate is obtained by reduction of pixel output load by the pixelwise memory array architecture and introduction of the burst CDS operation which minimizes the pixel driving pulse transitions. Long record length is realized by high density analog memory integration with Si trench capacitors. A maximum 125 Mfps frame rate with up to 368 record length video capturing was confirmed under room temperature without any cooling system. The photoelectric conversion characteristics of the burst CDS operation were measured and compared with those of the conventional CDS operation.

An 8Tap CMOS LockIn Pixel Image Sensor for ShortPulse TimeofFlight Measurements An 8tap CMOS lockin pixel image sensor that has seven carriercapturing and a draining time window was developed for shortpulse timeofflight (TOF) measurements. The proposed pixel for the shortpulse TOF measurements has seven consecutive timegating windows, each of which has the width of 6 ns, which is advantageous for highresolution range imaging, particularly for relatively longer distances (u003e5 m) and under high ambient light operations. In order to enhance the depth resolution, a technique for the depthadaptive timegatingnumber assignment (DATA) for the shortpulse TOF measurement is proposed. A prototype of the 8tap CMOS lockin pixel image sensor is implemented with a 1POLY 4METAL 0.11xcexbcm CIS process. The maximum nonlinearity error of 1.56%FS for the range of 1xe2x80x936.4 m and the depth resolution of 6.4 mm was obtained at 6.2 m using the DATA technique.