Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model Negative capacitance FET (NCFET) is one of the most promising steepsubthreshold slope (SS) transistors. Thanks to the discovery of ferroelectric HfO 2  (FEHfO 2 ), NCFET has been getting more attentions as a highly manufacturable solution. Since the proposal of NCFET and discovery of FEHfO2, there have been many experimental demonstrations of steep SS with NCFET. However, the physical mechanism of steep SS has not been fully understood yet, and confident explanations have not been given to these experimental results. In this paper, we report our recent progress of theoretical and experimental studies toward comprehensive understanding of NCFET regarding steep SS behavior, reverse DIBL and negative differential resistance (NDR). Transient NC theory that we explore is able to consistently explain some class of previously reported experimental results. This paper will help to guide further NCFET research activities.

Dynamics of Ferroelectric and Ionic Memories: Physics and Applications Ferroelectric (FE) and solid polymer electrolytes (SPEs) are being explored for memory and for a variety of purposes in transistors. While considering the dynamics of emerging memories, we note some interesting implications for transistors and transistor memories. In this paper we consider the dynamics of subthreshold swing (SS) in transistors and show that under certain conditions SS can be lowered due to the delay associated with their complex impedance. We show that even a conventional metal oxide semiconductor fieldeffect transistor (MOSFETs) can exhibit a dynamic SS, lowered by introducing a series resistance in the gate. We show that the when the gate dielectric has a complex response, SS can be decomposed into static and dynamic factors with the static factor given by the usual thermal SS and the dynamic factor related to dynamic gate amplification. In the measurement of SS, slew rate and slew direction can be readily utilized to reveal the SS dependence on dynamics.