Dynamics of Ferroelectric and Ionic Memories: Physics and Applications Ferroelectric (FE) and solid polymer electrolytes (SPEs) are being explored for memory and for a variety of purposes in transistors. While considering the dynamics of emerging memories, we note some interesting implications for transistors and transistor memories. In this paper we consider the dynamics of subthreshold swing (SS) in transistors and show that under certain conditions SS can be lowered due to the delay associated with their complex impedance. We show that even a conventional metal oxide semiconductor fieldeffect transistor (MOSFETs) can exhibit a dynamic SS, lowered by introducing a series resistance in the gate. We show that the when the gate dielectric has a complex response, SS can be decomposed into static and dynamic factors with the static factor given by the usual thermal SS and the dynamic factor related to dynamic gate amplification. In the measurement of SS, slew rate and slew direction can be readily utilized to reveal the SS dependence on dynamics.

Mos2 transistor gated by PMMAbased electrolyte for sub1 V operation The fabrication of highperformance MoS 2  transistor with a reliable gate dielectric layer remains an obstacle due to the lack of dangling bonds for dielectric deposition. Here, we demonstrate the employment of PMMAbased electrolyte film as the gate dielectric for Mos2 transistors. The electrolyte can be utilized to form high quality and uniform thin film by spincoating method at room temperature. Based on this PMMAbased electrolyte film, topgated Mos2 field effect transistors (FETs) are fabricated and exhibit exceptional device performance. The ultrahigh capacitance of the electrolyte, resulting from the formation of an electric double layer (EDL), yields a current onoff ratio about 105 and a steep subthreshold swing (90 mVdec) within a low supply voltage (1 V). Furthermore, we investigate the dynamic response of a Mos2 inverter with a switching speed over 100 Hz. This result provides the possibility for realizing low power logic circuit and nanoelectronics.