High Intensity Focused Ultrasound for Noninvasive Medical Applications Even though ultrasound has been exploited for medical applications for a long time, High Intensity Focused Ultrasound (HIFU) is getting more and more attention not only from the medical community but also from electronic circuit designers thanks to the still growing progress in circuit fabrication technologies as well as in imaging techniques and systems. Also owing to the noninvasive property of HIFU treatment, not only some undesired sideeffects can be avoided for patients but also the healing periods can be considerably shortened compared with other medical treatments. However, the remarkable progress has been observed only over the past 10 years. A brief discussion of the HIFU systems with a focus on the ultrasound transducer driver circuits is given in this paper.

A High Linearity Low Power 130 nm CMOS LNA for Medical Ultrasound Imaging In this paper, a frontend high linearity lownoiseamplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, xe2x80x9cderivative superpositionxe2x80x9d (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37xc2xb0C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP 3 ) value of xe2x88x924.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of  189.9 mu mathbfW . The proposed design simultaneously achieved low power and high third order linearity.