A 36xe2x80x9340 GHz VCO with bonding inductors for millimeter wave 5G Communication A 36xe2x80x9340 GHz VCO has been presented in this paper. The VCO consist of crosscoupled transistors, output buffer and inductors realized by bonding wires. The VCO was implemented in a 65 nm CMOS technology and its frequency tuning range can fully cover the N260 band of FR2 for 5G communication which proposed by 3GPP. A novel bonding wire structure was proposed and utilized as inductor to obtain better performance compared to the onchip inductors. Moreover, it can significantly save the silicon area and realize system in package (SiP) integration. The digital part can be realized in 28 nm CMOS technology and the RF part is implemented in 65 nm CMOS technology. Thus, the system can be optimized simultaneously. The simulated demonstrates the VCO has 4 GHz tuning range, and its phase noise is 91.8 dBcHz  1MHz when the VCO oscillate at 40 GHz. The chip size of the proposed VCO is 0.113x.192 mmxe2x80x9d.

A 37 to 40 GHz Transceiver for Fifth Generation Communication Systems A highintegrated fifth generation (5G) transceiver that covers over the band 37 to 40 GHz has been manufactured by standard 65nm CMOS technology. The single CMOS chip that includes doublebalanced upconversion mixer, doublebalanced downconversion mixer, low noise amplifier, buffer amplifier, power amplifier, and switch is mounted on the Rogers board by the flipchip assembly technology. The measurement results show that the transceiver can achieve an OP1dB of 12.23 dBm and a poweradded efficiency at OP 1 dB of 12.4%. Under the OFDM 64QAM 500MHz modulation signal at 38 GHz, the 30 dB error vector magnitude (EVM) compliant output power of the proposed power amplifier is 1 dBm.