High precision low power CMOS bandgap for RFID In this paper, a low power high precision bandgap reference with a thirdorder temperature compensation and a high slope positivetemperature coefficient voltage are designed using a SMIC 180 nm BiCMOS process. The structure of positive temperature coefficient current and negative temperature coefficient current subtraction are used to obtain a high slope positive temperature coefficient current, which is more convenient for sampling of the rear circuit. The simulation show when the temperature is changed within the range of xe2x88x9225 to 100 xc2xb0C, the temperature coefficient of the output reference voltage is 3.8ppmxc2xb0C, the slope of the PTAT voltage is 5.13mVxc2xb0C the PSRR at low frequency is xe2x88x9262dB. At a power supply voltage of 1.8V, the overall power consumption is 50uW.

A LowTemperatureCoefficient and HighPSRR Bandgap Reference for Readout Circuit of SPAD In this paper, a bandgap voltage reference (BGR) with a low temperature coefficient, used for readout circuits of SPAD, has been designed and fabricated successfully in the standard MXIC 0.5xc2xb5m 1P3M CMOS process. The area of the core circuit occupies 244xc3x97215xc2xb5m2. The test results show that the designed bandgap reference could work normally under the power supply voltage of 2.8V to 8V with a line regulation (LNR) of 0.0096%. At room temperature (25xc2xb0C), the stable reference output voltage is 1.168V. The reference voltage varies by only 1.8mV within the temperature range of 0150xc2xb0C, and leads to a temperature coefficient of 10.28ppmxc2xb0C. Under the power supply of 5V, the BGR chip exhibits a power supply rejection ratio (PSRR) of 76.4dB at 1KHz.