SoftError Tolerance Depending on Supply Voltage by Heavy Ions on RadiationHardened Flip Flops in a 65 nm Bulk Process We evaluated softerror tolerance by heavy ions on several types of flip flops (FFs) called transmissiongate FF (TGFF), Dual Interlocked Storage Cell FF (DICEFF), Bistable Crosscoupled Dual Modular Redundancy FF (BCDMRFF) and BCDMRFF with Set and Reset (BCDMRFFSR) in a 65 nm bulk process. Radiationhardened FFs are stronger against soft errors than a standard TGFF by two or three order of magnitude. DICEFF has higher softerror tolerance than BCDMRFF by lowLET heavy ions less than 40 MeVcm2mg, while BCDMRFF is stronger against soft error than DICEFF by highLET ions over 40 MeVcm2mg. DICEFF becomes weaker by lowering supply voltage, while BCDMRFF has higher softerror tolerance than DICEFF when supply voltages is less than 1.0 V.

A radiation resistant library based on DICE and faulttolerant delay filtering techniques in CMOS 0.18xcexbcm technology A radiation resistant standard cell library is completed based on SMIC 0.18 xcexbcm technology in this paper. Standard cell library includes combinatorial logic cells and sequential logic cells. SET (Single Event Transient) effect always occurs in combinatorial logic cells, and SEU (Single Event Upset) effect always occurs in sequential logic cells. SEL(Single Event Latchup) and TID(Total Ionizing Dose) effects affect all logic cells. According to radiation effects, logic cells in the standard cell library are designed with harden methods at the circuit level and the layout level. Combination logic cells adopt faulttolerant delay filtering method in circuit level, and sequential logic cells use DICE structure in circuit design. A guard ring has been added to the layout design for the SEL and TID effects. Then physical information and timing information are extracted for all cells, and the library building process is completed. Finally we use EDA tools to verify the availability of the antiradiation library.