A 0.91.82.4GHzreconfigurable LNA with Inductor and Capacitor Tuning for IoT Application in 65nm CMOS This paper presents a 0.91.82.4GHzreconfigurable low noise amplifier (LNA) for IoT applications. An input transformer consisting of a primary coil and two secondary coils is proposed in the LNA to ensure impedance matching in three bands. Mutual inductance enhancement scheme is also proposed to boost the inductance Q value and improve circuit performance without power overhead. The proposed LNA is designed and simulated in TSMC 65nm CMOS with an area of 1.32mm2. The postlayout simulations show that the presented LNA achieves 14.51617.5dB voltage gain and 2.82.52.0dB noise figure at 0.91.82.4GHz. The S11 and the input P1dB are xe2x88x928.8119.6dB and xe2x88x92111719dBm at 0.91.82.4GHz respectively. The LNA power consumption is 4mW from a 1.2V power supply.

Reconfigurable IRUWB Current Mode Switched Receiver for IoT Applications A multiband impulse radio ultrawideband (IRUWB) receiver with lowcomplexity and lowpower architecture is reported in TSMC  0.13mumathrmm  CMOS technology. The receiver is composed of a lowpower differential UWB low noise amplifier (LNA) with high gain and with relatively flat inband noise figure (NF), a squarer and variable gain baseband amplifier. The LNA, squarer and amplifier can be dynamically reconfigured in three different bands. The post layout simulation results of the LNA show a NF lower than 4.5 dB and a gain of 17.7, 17.1, and 17.5 dB for band1, band2, and band3, respectively. The chip area of the IRUWB receiver is  1.5mathrmmmtimes 1mathrmmm . It consumes 15.3 mW from a 1.2 V supply when one LNA branch is active.