A 2240.5 GHz UWB LNA Design in 0.15um GaAs This paper presents an ultrawideband lownoise amplifier (UBW LNA) design for 5G communication and other millimeterwave applications. In the proposed LNA design, the common source stage with inductive degeneration is used for a better input matching, and the Pi network is used for the ultrawideband matching. The proposed UBW LNA is demonstrated using 0.15 um GaAs process. According to the postlayout simulations, the LNA operates from 22 GHz to 40.5 GHz, and a maximum gain of 20 dB and minimum noise figure of 3.4 dB are achieved. The LNA achieves a 59% 3 dB and a 48% 1 dB smallsignal S 21  bandwidth.

The Design and Performance Comparison of Wide Bandwidth LNA with Three Different Kinds of Technologies A low noise amplifier (LNA) is the first active stage in a receiver, which plays a key role in the entire receiver. In this paper, LNAs with three different kinds of devices  enhancement mode (Emode) Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT), depletion mode (Dmode) Gallium Nitride (GaN) high electron mobility transistor HEMT, and SiliconOnInsulator (SOI) CMOS are designed, simulated, analyzed and compared. For a fair comparison, the LNAs of the same circuit topology are built up with noiseless matching components, and their performances are compared in the terms of both important specifications and a universal Figure of Merits (FOM). The simulation results show that: the LNA with using Emode GaAs PHEMT achieves the lowest noise figure (NF) of 0.51 dB while the SOICMOS gets the best FOM of among the three devices. To our limited knowledge, this paper is one of few attempts to compare devicesu0027 capabilities in building up wide bandwidth LNAs with resistor feedback networks.