High performance optoelectronics based on CVD Mos2 Transition metal dichalcogenides (TMDs) are regarded as promising nano materials for next generation electronics and optoelectronics due to their ultrathin body nature and excellent transport properties. Here, single crystal growth of monolayer Mos2 has been realized by controllable atmosphere pressure chemical vapor deposition (APCVD) method. The highquality of Mos2 grown directly on SiO 2 Si substrate has been demonstrated by various material characterization methods. The fabricated optoelectronic device shows prominent photoresponse within a broadband spectrum range and a wide optical power range by taking advantage of the Schottky contact at sourcedrain electrodes. As a result, high photoresponsivity of 3xc3x97104 AW as well as high photodetectivity up to 7xc3x971012 Jones have been achieved.

Mos2 transistor gated by PMMAbased electrolyte for sub1 V operation The fabrication of highperformance MoS 2  transistor with a reliable gate dielectric layer remains an obstacle due to the lack of dangling bonds for dielectric deposition. Here, we demonstrate the employment of PMMAbased electrolyte film as the gate dielectric for Mos2 transistors. The electrolyte can be utilized to form high quality and uniform thin film by spincoating method at room temperature. Based on this PMMAbased electrolyte film, topgated Mos2 field effect transistors (FETs) are fabricated and exhibit exceptional device performance. The ultrahigh capacitance of the electrolyte, resulting from the formation of an electric double layer (EDL), yields a current onoff ratio about 105 and a steep subthreshold swing (90 mVdec) within a low supply voltage (1 V). Furthermore, we investigate the dynamic response of a Mos2 inverter with a switching speed over 100 Hz. This result provides the possibility for realizing low power logic circuit and nanoelectronics.