Patent application 13829206 (US), filed 2013-03-14
Publication number: US20130298984A1
Title: PASSIVATION OF SILICON SURFACES USING INTERMEDIATE ULTRA-THIN SILICON OXIDE LAYER AND OUTER PASSIVATING DIELECTRIC LAYER
CPC codes: H10F  77/311
H01L  21/02592
H10F  10/148
H10F  10/146
H10F  10/166
H10D  62/83
Y02E  10/547
Office action: rejection, dated 2015-10-14
Rejection reasons: obviousness_103
Prior art cited: ref_id: 20060263921
ref_type: patent
severity: obviousness
ref_id: Chen The Conference Record of the First WCPEC, Waikoloa, Hawaii, pp 1331-1334, 1994
ref_type: patent
severity: obviousness
ref_id: 20060137733
ref_type: patent
severity: obviousness
ref_id: 20090215218
ref_type: patent
severity: obviousness
ref_id: 5401336
ref_type: patent
severity: obviousness
ref_id: 20090165855
ref_type: patent
severity: obviousness
ref_id: 20070169808
ref_type: patent
severity: obviousness
ref_id: 20080314434
ref_type: patent
severity: obviousness
ref_id: 20110139243
ref_type: patent
severity: obviousness
ref_id: 20100154883
ref_type: patent
severity: obviousness
Final disposition: rejected (2015-10-14)