Patent application EP19382418A (EP), filed 2019-05-23
Publication number: EP3742562A1
Title: METHODS FOR OBTAINING AN N-TYPE DOPED METAL CHALCOGENIDE QUANTUM DOT SOLID-STATE ELEMENT WITH OPTICAL GAIN AND A LIGHT EMITTER INCLUDING THE ELEMENT, AND THE OBTAINED ELEMENT AND LIGHT EMITTER
Abstract: [0001]    The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising:
- forming a metal chalcogenide quantum dot solid-state element, and
- carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises:
- a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or
- a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots;
and
- providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping.
[0002]    The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.
IPC codes: C09K  11/    88            A I
H01S   3/    16            A I
H01S   5/    34            A I
H01S   5/   347            A I
C09K  11/    66            A I
Claims: number: 1
text: A method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising:
number: 2
text: The method according to claim 1, wherein said metal chalcogenide is at least one of Pb-, Cd-, and Hg- chalcogenide, wherein said chalcogen atoms are at least one of sulphur, selenium, and tellurium atoms, and wherein said halogen atoms are at least one of iodine, bromine, and chlorine atoms.
number: 3
text: The method according to claim 1, wherein said metal chalcogenide is at least one of Pb-, Cd-, and Hg- chalcogenide, wherein said bivalent metal cations are at least one of Pb, Cd, and Hg, in the +2 oxidation state, and wherein said trivalent cations are at least one of In, Bi, Sb, and Ga, in the +3 oxidation state.
number: 4
text: The method according to any of the previous claims, comprising providing said substance to:
number: 5
text: The method according to any of the previous claims, wherein said substance is at least one of alumina, titania, ZnO, and hafnia.
number: 6
text: The method according to any of the previous claims, wherein said step of forming said metal chalcogenide quantum dot solid-state element comprises forming a blend with a host matrix of first metal chalcogenide quantum dots and, embedded therein, said plurality of metal chalcogenide quantum dots, which are second metal chalcogenide quantum dots having a smaller or equal bandgap, wherein said second metal chalcogenide quantum dots are larger than said first metal chalcogenide quantum dots, and wherein the method comprises applying said n-doping process at least on the second metal chalcogenide quantum dots so that they are heavily n-doped.
number: 7
text: A method according to any of the previous claims, comprising selecting the size of said plurality of metal chalcogenide quantum dots to obtain, after said n-doping process has been carried out thereon, an initial electron occupancy doping <N><D> ranging from 1.4 to 5.4.
number: 8
text: The method according to nay of the previous claims, wherein at least part of said plurality of metal chalcogenide quantum dots are of a core-shell type, each including a core (C) and at least one shell (Sh), wherein said core comprises a metal chalcogenide and said shell a distinct metal chalcogenide or an alloy of the metal chalcogenide of the core, and wherein the n-doping process is applied to either the core (C), the at least one shell (Sh), or both.
number: 9
text: An n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising a plurality of metal chalcogenide quantum dots with its band-edge absorption at least partially bleached, wherein said plurality of metal chalcogenide quantum dots comprises:
number: 10
text: A method for obtaining a light emitter, comprising:
number: 11
text: A light emitter, comprising:
number: 12
text: A light emitter according to claim 11, wherein the light emitter is one of a superluminescence light emitter and a laser device further comprising a laser optical cavity and, optically coupled thereto, said gain medium (A), which is a laser gain medium, wherein said laser optical cavity is configured and arranged to provide optical feedback to said amplified spontaneous emission (ASE).
number: 13
text: A light emitter according to claim 12, wherein said laser device comprises at least one of a vertical-cavity surface-emitting laser structure (VCSEL), a distributed feedback laser structure (DFB), and a whispering gallery mode laser structure (WGM).
number: 14
text: A light emitter according to claim 13, wherein:
number: 15
text: A light emitter according to any of claims 11 to 14, configured to emit light with a wavelength ranging from 800 nm to 2400 nm.
Office action: search_report, dated 2020-11-25
Prior art cited: ref_id: - HUANG, D. ET AL.: "Optical coherence tomography", SCIENCE, vol. 254, 1991, pages 1178 - 81
ref_type: npl
severity: background
ref_id: - LIANG, D.BOWERS, J. E.: "Recent progress in lasers on silicon", NAT. PHOTONICS, vol. 4, 2010, pages 511 - 517
ref_type: npl
severity: background
ref_id: - ATABAKI, A. H. ET AL.: "Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip", NATURE, vol. 556, 2018, pages 349 - 354, XP036530451, DOI: doi:10.1038/s41586-018-0028-z
ref_type: npl
severity: background
ref_id: - KLIMOV, V. I. ET AL.: "Optical gain and stimulated emission in nanocrystal quantum dots", SCIENCE, vol. 290, 2000, pages 314 - 7, XP055225489, DOI: doi:10.1126/science.290.5490.314
ref_type: npl
severity: background
ref_id: - CHRISTODOULOU, S. ET AL.: "Chloride-Induced Thickness Control in CdSe Nanoplatelets", NANO LETT., vol. 18, 2018, pages 6248 - 6254
ref_type: npl
severity: background
ref_id: - BRUS, L.: "Zero-dimensional 'excitons' in semiconductor clusters", IEEE J. QUANTUM ELECTRON., vol. 22, 1986, pages 1909 - 1914
ref_type: npl
severity: background
ref_id: - KLIMOV, V. I. ET AL.: "Single-exciton optical gain in semiconductor nanocrystals", NATURE, vol. 447, 2007, pages 441 - 446, XP007902527, DOI: doi:10.1038/nature05839
ref_type: npl
severity: background
ref_id: - DANG, C. ET AL.: "Red, green and blue lasing enabled by single-exciton gain in colloidal quantum dot elements", NAT. NANO., vol. 7, 2012, pages 335 - 339
ref_type: npl
severity: background
ref_id: - ADACHI, M. M. ET AL.: "Microsecond-sustained lasing from colloidal quantum dot solids", NAT. COMMUN., vol. 6, 2015, pages 8694
ref_type: npl
severity: background
ref_id: - GRIM, J. Q. ET AL.: "Continuous-wave biexciton lasing at room temperature using solution-processed quantum wells", NAT. NANOTECHNOL., vol. 9, 2014, pages 891 - 895
ref_type: npl
severity: background
ref_id: - R. D. SCHALLERM. A. PETRUSKAKLIMOV*, V. I., TUNABLE NEAR-INFRARED OPTICAL GAIN AND AMPLIFIED SPONTANEOUS EMISSION USING PBSE NANOCRYSTALS, 2003
ref_type: npl
severity: background
ref_id: - SUKHOVATKIN, V. ET AL.: "Room-temperature amplified spontaneous emission at 1300 nm in solution-processed PbS quantum-dot elements", OPT. LETT., vol. 30, 2005, pages 171
ref_type: npl
severity: background
ref_id: - FAN, F. ET AL.: "Continuous-wave lasing in colloidal quantum dot solids enabled by facet-selective epitaxy", NATURE, vol. 544, 2017, pages 75 - 79, XP055593932, DOI: doi:10.1038/nature21424
ref_type: npl
severity: background
ref_id: - WU, K.PARK, Y.-S.LIM, J.KLIMOV, V. I.: "Towards zero-threshold optical gain using charged semiconductor quantum dots", NAT. NANOTECHNOL., vol. 12, 2017, pages 1140 - 1147
ref_type: npl
severity: background
ref_id: - PRADHAN, S. ET AL.: "High-efficiency colloidal quantum dot infrared light-emitting diodes via engineering at the supra-nanocrystalline level", NAT. NANOTECHNOL., vol. 14, 2019, pages 72 - 79, XP036667507, DOI: doi:10.1038/s41565-018-0312-y
ref_type: npl
severity: background
ref_id: - XU, J. ET AL.: "2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids", NAT. NANOTECHNOL., vol. 13, 2018, pages 456 - 462, XP036520652, DOI: doi:10.1038/s41565-018-0117-z
ref_type: npl
severity: background
ref_id: - BI, Y. ET AL.: "Infrared Solution-Processed Quantum Dot Solar Cells Reaching External Quantum Efficiency of 80% at 1.35 µηι and J sc in Excess of 34 mA cm -2", ADV. MATER., vol. 30, 2018, pages 1704928
ref_type: npl
severity: background
ref_id: - KONSTANTATOS, G. ET AL.: "Ultrasensitive solution-cast quantum dot photodetectors", NATURE, vol. 442, 2006, pages 180 - 183, XP055039976, DOI: doi:10.1038/nature04855
ref_type: npl
severity: background
ref_id: - GOOSSENS, S. ET AL.: "Broadband image sensor array based on graphene-CMOS integration", NAT. PHOTONICS, vol. 11, 2017, pages 366 - 371, XP055569932, DOI: doi:10.1038/nphoton.2017.75
ref_type: npl
severity: background
ref_id: - HOOGLAND, S. ET AL.: "A solution-processed 1.53 µηι quantum dot laser with temperature-invariant emission wavelength", OPT. EXPRESS, vol. 14, 2006, pages 3273
ref_type: npl
severity: background
ref_id: - NING, Z. ET AL.: "Air-stable n-type colloidal quantum dot solids", NAT. MATER., vol. 13, 2014, pages 822 - 828
ref_type: npl
severity: background
ref_id: - NISHIHARA, T.TAHARA, H.OKANO, M.ONO, M.KANEMITSU, Y.: "Fast Dissociation and Reduced Auger Recombination of Multiple Excitons in Closely Packed PbS Nanocrystal Thin Elements", J. PHYS. CHEM. LETT., vol. 6, 2015, pages 1327 - 1332
ref_type: npl
severity: background
ref_id: - ONO, M. ET AL.: "Impact of surface ligands on the photocurrent enhancement due to multiple exciton generation in close-packed nanocrystal thin elements", CHEM. SCI., vol. 5, 2014, pages 2696
ref_type: npl
severity: background
ref_id: - GEIREGAT, P. ET AL.: "Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots", NAT. MATER., vol. 17, 2018, pages 35 - 42
ref_type: npl
severity: background
ref_id: - SALHI, A. ET AL.: "Enhanced modal gain of multilayer InA&1nGaASlGaAs quantum dot lasers emitting at 1300nm", J. APPL. PHYS., vol. 100, 2006, pages 123111, XP012089269, DOI: doi:10.1063/1.2402744
ref_type: npl
severity: background
ref_id: - KRESSE, G.FURTHMULLER, J., PHYS. REV. B: CONDENS. MATTER MATER. PHYS., vol. 54, 1996, pages 11169
ref_type: npl
severity: background
ref_id: - PERDEW, J.P.BURKE, K.ERNZERHOF, M., PHYS. REV. LETT., vol. 77, 1996, pages 3865
ref_type: npl
severity: background
ref_id: - HEYD, J.SCUSERIA, G.E.ERNZERHOF, M., J. CHEM. PHYS., vol. 118, 2003, pages 8207
ref_type: npl
severity: background
ref_id: - KRESSE, G.JOUBERT, D., PHYS. REV. B: CONDENS. MATTER MATER. PHYS., vol. 59, 1999, pages 1758
ref_type: npl
severity: background
ref_id: - MONKHORST, H.J.PACK, J.D., PHYS. REV. B, vol. 13, 1976, pages 5188
ref_type: npl
severity: background
ref_id: - HUMMER, K.GRUNEIS, A.KRESSE, G., PHYS. REV. B, vol. 75, 2007, pages 195211
ref_type: npl
severity: background
ref_id: - DORNHAUS, R.NIMTZ, G.SCHLICHT, B.: "Narrow-Gap Semiconductors", 1985, SPRINGER-VERLAG
ref_type: npl
severity: background
ref_id: - MASHAI ONO ET AL., CHEM. SCI., vol. 5, 2014, pages 2696
ref_type: npl
severity: background
ref_id: US2018216003A1
ref_type: patent
severity: background
ref_id: US2016380136A1
ref_type: patent
severity: background
ref_id: - JIANBING ZHANG ET AL: "Diffusion-Controlled Synthesis of PbS and PbSe Quantum Dots with in Situ Halide Passivation for Quantum Dot Solar Cells", ACS NANO, vol. 8, no. 1, 28 January 2014 (2014-01-28), US, pages 614 - 622, XP055551263, ISSN: 1936-0851, DOI: 10.1021/nn405236k
ref_type: npl
severity: background
ref_id: US2016380136
ref_type: patent
severity: background
ref_id: US2018216003
ref_type: patent
severity: background
ref_id: - JIANBING ZHANG ET AL, "Diffusion-Controlled Synthesis of PbS and PbSe Quantum Dots with in Situ Halide Passivation for Quantum Dot Solar Cells", ACS NANO, US, (20140128), vol. 8, no. 1, doi:10.1021/nn405236k, ISSN 1936-0851, pages 614 - 622, XP055551263 [A] 1-15 * abstract *
ref_type: npl
severity: background
Final disposition: pending (2020-11-25)