Patent application EP19729431A (EP), filed 2019-04-30
Publication number: EP3756757A1
Title: METHOD FOR PREPARATION OF SUPPORTED CARBON CATALYST, AND SUPPORTED CARBON CATALYST AND USE THEREOF
Abstract: [0001]    The present invention provides a method for preparing a supported carbon catalyst, the method comprises at least the following steps: (1) contacting a gas containing an organic silicon source with a silicon oxide-based material to obtain a precursor; (2) contacting the precursor with a gas containing an organic carbon source to obtain the supported carbon catalyst. The temperature and energy consumption of the chemical vapor deposition of heteroatom-containing carbon material on silica-based materials can be greatly reduced in this method, and the cost of the catalyst can be effectively reduced.
IPC codes: B01J  27/    20            A I
B01J  37/    08            A I
C07C  15/    46            A I
C07C  17/    08            A I
C07C  17/    25            A I
C07C  21/    06            A I
C07C   5/   333            A I
B01J  37/    02            A I
B01J  37/    34            A I
C07C   5/    00            A I
Claims: number: 1
text: A method for preparing a supported carbon catalyst, wherein the method comprises:
number: 2
text: The method according to claim 1, wherein the organic silicon source in the step (1) is at least one selected from the group consisting of a compound with a chemical formula shown in formula I and a compound with a chemical formula shown in formula II:
number: 3
text: The method according to claim 2, wherein a substituent is contained in the substituted hydrocarbyl group; the substituent is at least one selected from the group consisting of halogen, amino, epoxyethyl, sulfydryl, cyano, isocyanate group, and ethylenediamine.
number: 4
text: The method according to claim 1, wherein the organic silicon source in step (1) is least one selected from the group consisting of dichlorodimethylsilane, hexamethyldisiloxane, trimethylchlorosilane, phenyltrichlorosilane and dimethoxydimethylsilane.
number: 5
text: The method according to claim 1, wherein the gas containing the organic silicon source in step (1) contains or does not contain an inactive gas;
the inactive gas is at least one selected from the group consisting of nitrogen, argon gas and helium gas.
number: 6
text: The method according to claim 1, wherein the silicon oxide-based material in step (1) is porous silicon dioxide.
number: 7
text: The method according to claim 1, wherein the gas containing the organic silicon source in step (1) contacts with the silicon oxide-based material at a contact temperature in a range from 100□ to 500 □ for 0.1 hour to 10 hours.
number: 8
text: The method according to claim 1, wherein the gas containing the organic silicon source in step (1) contacts with the silicon oxide-based material at a contact temperature in a range from 200 □ to 450 □ for 0.2 hour to 4 hours.
number: 9
text: The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the precursor is in a range from 80 wt% to 98 wt%.
number: 10
text: The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the precursor is in a range from 90 wt% to 97wt%.
number: 11
text: The method according to claim 1, wherein the organic carbon source in the step (1) is at least one of a C<1> to C<18> organic compound;
the organic compound contains at least one selected from the group consisting of nitrogen, oxygen, boron, phosphorus, and sulfur.
number: 12
text: The method according to claim 1, wherein the organic carbon source in step (2) is at least one selected from the group consisting of nitrile compounds, pyridine compounds, organic phosphine compounds, organoboron compounds, thiophene compounds, phenol compounds, and alcohol compounds.
number: 13
text: The method according to claim 1, wherein the gas containing the organic carbon source in step (2) contains an inactive gas;
the inactive gas is at least one selected from the group consisting of nitrogen, argon gas and helium gas.
number: 14
text: The method according to claim 1, wherein the precursor in step (2) contacts with the gas containing the organic carbon source at a contact temperature in a range from 500 □ to 1000□ for 0.1 hour to 10 hours.
number: 15
text: The method according to claim 1, wherein the precursor in step (2) contacts with the gas containing the organic carbon source at a contact temperature in a range from 600 □ to 900 □ for 0.1 hour to 4 hours.
number: 16
text: The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the supported carbon catalyst is in a range from 60 wt% to 95wt%.
number: 17
text: The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the supported carbon catalyst is in a range from 75 wt% to 93wt%.
number: 18
text: A supported carbon catalyst prepared according to any methods of claims 1 to 17.
number: 19
text: Use of the supported carbon catalyst of claim 18 in the dehydrohalogenation of halogenated hydrocarbon, hydrochlorination of acetylene to prepare chloroethylene, the preparation of chloroethylene from acetylene and dichloroethane, the dehydrogenation of alkane to prepare olefin or dehydrogenation of ethylbenzene to prepare styrene.
number: 20
text: A method for preparing chloroethylene from 1,2-dichloroethane wherein a feed gas containing 1,2-dichloroethane is passed through a fixed bed reactor loaded with a catalyst to prepare chloroethylene;
the catalyst is at least one selected from the supported carbon catalysts of claim 19.
Office action: search_report, dated 2020-12-30
Rejection reasons: novelty_epc_54
Prior art cited: ref_id: - XU S. C. ET AL, "Direct synthesis of graphene on SiO2 substrates by chemical vapor deposition", CRYSTENGCOMM, GB, (20130101), vol. 15, no. 10, doi:10.1039/c3ce27029g, ISSN 1466-8033, page 1840, XP055818654 [X] 13 * abstract * * page  1840, column  r, line  33  - page  1841, column  l, line  5 *
ref_type: npl
severity: novelty_destroying
ref_id: - ZHAO WEI ET AL, "Catalytic dehydrochlorination of 1,2-dichloroethane to produce vinyl chloride over N-doped coconut activated carbon", vol. 5, no. 126, doi:10.1039/C5RA20916A, (20150101), pages 104071 - 104078, RSC ADVANCES, URL: https://pubs.rsc.org/en/content/articlepdf/2015/ra/c5ra20916a, XP055787652 [I] 14-15 * abstract * * page  104072, column  r, lines  1-35 *
ref_type: npl
severity: background
Final disposition: pending (2020-12-30)