Assertion: transistor's junction | /r/HasProperty | complex transport of carriers
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Source sentences:
text: today many more processes must be modeled at a microscopic level; for example, leakage currents in junctions and oxides, complex transport of carriers including velocity saturation and ballistic transport, quantum mechanical effects, use of multiple materials (for example, Si-SiGe devices, and stacks of different dielectrics) and even the statistical effects due to the probabilistic nature of ion placement and carrier transport inside the device.
text: today many more processes must be modeled at a microscopic level; for example, leakage currents in junctions and oxides, complex transport of carriers including velocity saturation and ballistic transport, quantum mechanical effects, use of multiple materials (for example, Si-SiGe devices, and stacks of different dielectrics) and even the statistical effects due to the probabilistic nature of ion placement and carrier transport inside the device.