Assertion: transistor's gate | /r/CapableOf | form the 2d electron gas
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Source sentences:
text: HEMTs made of semiconductor hetero-interfaces lacking interfacial net polarization charge, such as AlGaAs/GaAs, require positive gate voltage or appropriate donor-doping in the AlGaAs barrier to attract the electrons towards the gate, which forms the 2D electron gas and enables conduction of electron currents.