Assertion: transistor's emitter | /r/HasProperty | doped
Facets:
value: heavily
type: DEGREE
value: highly
type: DEGREE
value: of p-type
type: OTHER
value: with free electrons
type: OTHER
value: compared to collector
type: OTHER
value: moderately
type: DEGREE
Source sentences:
text: The emitter is heavily doped, while the collector is lightly doped, allowing a large reverse bias voltage to be applied before the collector–base junction breaks down.
text: The reason the emitter is heavily doped is to increase the emitter injection efficiency: the ratio of carriers injected by the emitter to those injected by the base.
text: The emitter is moderately doped, and the collector is heavily doped.
text: The emitter of the NPN transistor is heavily doped.
text: As emitter is highly doped compared to collector it is advantageous to reverse bias collector base junction in order to have the advantage of high breakdown voltages.
text: The emitter is heavily doped.
text: The emitter of the PNP transistor is highly doped and the base of it is lightly doped while the collector is moderately doped.
text: The emitter is of p-type is heavily doped; this single PN junction gives the device its name.
text: The emitter is heavily doped, while the collector is lightly doped, allowing a large reverse bias voltage to be applied before the collector-base junction breaks down.
text: The reason the emitter is heavily doped is to increase the emitter injection efficiency: the ratio of carriers injected by the emitter to those injected by the base.
text: The emitter is of p-type is heavily doped; this single PN junction gives the device its name.
text: The emitter is heavily doped with free electrons so we have lots of free electrons here.