Assertion: mobility transistor | /r/CapableOf | incorporate junction
Facets:
value: as a doped region
type: OTHER
value: as the channel
type: MANNER
Source sentences:
text: A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).