Assertion: bipolar transistor | /r/HasProperty | developed by jayant baliga
Facets:
value: between 1979
type: TEMPORAL
value: at general electric
type: LOCATION
value: between 1977
type: TEMPORAL
Source sentences:
text: The insulated-gate bipolar transistor (IGBT), which combines elements of both the power MOSFET and the bipolar junction transistor (BJT), was developed by Jayant Baliga at General Electric between 1977 and 1979.