Assertion: transistor's voltage | /r/HasProperty | applied at the gate
Facets:
value: in a field-effect transistor
type: OTHER
value: to deplete charge carriers
type: PURPOSE
value: for an n-channel device
type: PURPOSE
Source sentences:
text: In a depletion mode MOSFET, voltage applied at the gate can reduce the conductivity from the "normally on" state.
text: To control the channel, a negative voltage is applied to the gate (for an n-channel device), depleting the channel, which reduces the current flow through the device.
text: In the n-type, if the voltage applied to the gate is negative with respect to the source, the current will be reduced (similarly in the p-type, if the voltage applied to the gate is positive with respect to the source).
text: Electric current fromtoin ais restricted when a voltage is applied to the Type Active Pin configuration drain, gate, source Electronic symbol
text: When a positive voltage is applied on the gate, the electrons from the n+ source and the drain region are attracted towards it, forming an electron reach channel
text: If a positive voltage is applied at the gate, holes which are at the surface of the p-type substrate will be repelled by the electric field generated by the voltage applied.
text: When voltage is applied at the gate, it generates an electrical field that changes the width of the channel region, where the electrons flow.
text: When voltage is applied at the gate, it generates an electrical field that changes the width width of the channel region, where the electrons flow.
text: It states that when there’s no voltage applied at the gate, channel conductance is at its maximum When voltage is applied at the gate, The conductivity of the device decreases
text: It states that when there’s no voltage applied at the gate, channel conductance is at its maximum When voltage is applied at the gate, The conductivity of the device decreases
text: When there’s no voltage applied at the gate, there’s no conductance
text: When voltage is applied at the gate, the conductivity of the device increases
text: When the anode is at a positive potential V AK with respect to the cathode with no voltage applied at the gate, junctions J 1 and J 3 are forward biased, while junction J 2 is reverse biased.
text: A secondary voltage is applied to the gate to deplete charge carriers beneath it, thereby pinching off the current, or changing the state to off (“false” or “0”).
text: When a positive voltage greater than the threshold voltage is applied to the gate, electrons accumulate at the interface and form a two-dimensional electron gas.
text: The net result is that the current between drain and source is controlled by the voltage which is applied to the gate.
text: When a negative voltage is applied to the gate, the transistor switches on.
text: When a positive voltage is applied to the gate, it shuts off.
text: In the n-type, if the voltage applied to the gate is negative with respect to the source, the current will be reduced (similarly in the p-type, if the voltage applied to the gate is positive with respect to the source).
text: The flow of electrons from the source to the drain is controlled by the voltage applied to the gate.
text: A positive voltage applied to the gate, attracts electrons to the interface between the gate dielectric and the semiconductor.
text: In a field-effect transistor (FET), voltage applied to the gate controls the flow of current through a channel from the source to the drain.