Assertion: jfet transistor | /r/CapableOf | reduce the width of the current flow
Facets:
Source sentences:
text: It represents the resistance of the epitaxial zone directly under the gate electrode, where the direction of the current changes from horizontal (in the channel) to vertical (to the drain contact); R JFET is the detrimental effect of the cell size reduction mentioned above: the P implantations (see figure 1) form the gates of a parasitic JFET transistor that tend to reduce the width of the current flow;
text: is the detrimental effect of the cell size reduction mentioned above: the P implantations (see figure 1) form the gates of a parasitic JFET transistor that tend to reduce the width of the current flow; R n is the resistance of the epitaxial layer.