Assertion: bipolar transistor | /r/HasProperty | igbt
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text: > Insulate Gate Bipolar Transistor (IGBT)
text: Insulated-gate Bipolar Transistor (IGBTs)
text: The insulated-gate bipolar transistor (IGBT) is a power transistor with characteristics of both
text: The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.
text: The Insulated-gate bipolar transistor (IGBT) was developed in the 1980s, and became widely available in the 1990s.
text: An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
text: Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages.
text: The insulated-gate bipolar transistor (IGBT), which combines elements of both the power MOSFET and the bipolar junction transistor (BJT), was developed by Jayant Baliga at General Electric between 1977 and 1979.
text: The following are the characteristics of Insulated-gate Bipolar transistor (IGBTs),