Assertion: transistor's gate | /r/HasProperty | -insulator
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Source sentences:
text: In a p-channel "depletion-mode" device, a positive voltage from gate to body widens the depletion layer by forcing electrons to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, positively charged acceptor ions.
text: If we consider a p-type semiconductor (with N A {\displaystyle N_{\text{A}}} the density of acceptors, p the density of holes; p = N A in neutral bulk), a positive voltage, V GB {\displaystyle V_{\text{GB}}} , from gate to body (see figure) creates a depletion layer by forcing the positively charged holes away from the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions (see doping (semiconductor)).