Assertion: boron impurity | /r/HasProperty | gaas
Facets:
Source sentences:
text: HEMTs avoid this through the use of high mobility electrons generated using the heterojunction of a highly doped wide-bandgap n-type donor-supply layer (AlGaAs in our example) and a non-doped narrow-bandgap channel layer with no dopant impurities (GaAs in this case).