Assertion: nanoscale fet | /r/HasProperty | -standing
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Source sentences:
text: 2A, black segments) components are integrated epitaxially at the nanoscale through synthesis (Fig. 1), similar to single-kink structures (18), (ii) the nanoscale FET is free-standing, and (iii) the acute-angle kinked-nanowire geometry and extended S/D arms spatially separate the functional nanoscale FET from the bulky interconnects by a distance up to ~30