Assertion: diode's number | /r/HasProperty | majority carriers
Facets:
Source sentences:
text: When this forward bias voltage is applied to the P-N junction diode, a large number of free electrons (majority carriers) in the n-type semiconductor experience a repulsive force from the negative terminal of the battery similarly a large number of holes (majority carriers) in the p-type semiconductor experience a repulsive force from the positive terminal of the battery.
text: When this forward bias voltage is applied to the P-N junction diode, a large number of free electrons (majority carriers) in the n-type semiconductor experience a repulsive force from the negative terminal of the battery similarly a large number of holes (majority carriers) in the p-type semiconductor experience a repulsive force from the positive terminal of the battery.
text: When this reverse bias voltage is applied to the P-N junction diode, a large number of free electrons (majority carriers) in the n-type semiconductor experience an attractive force from the positive terminal of the battery similarly a large number of holes (majority carriers) in the p-type semiconductor experience an attractive force from the negative terminal of the battery.
text: When this reverse bias voltage is applied to the P-N junction diode, a large number of free electrons (majority carriers) in the n-type semiconductor experience an attractive force from the positive terminal of the battery similarly a large number of holes (majority carriers) in the p-type semiconductor experience an attractive force from the negative terminal of the battery.