Assertion: metal oxide semiconductor field effect transistor | /r/HasProperty | mosfet
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text: The metal–oxide–semiconductor field-effect transistor (MOSFET) was invented by Mohamed Atalla and Dawon Kahng in 1959.
text: Another kind of unipolar transistor, called the metal-semiconductor field-effect transistor (MESFET), is particularly well suited for microwave and other high-frequency applications because it can be manufactured from semiconductor materials with high electron mobilities that do not support an insulating oxide surface layer.
text: Nowadays, the vast majority of field-effect transistors are metal oxide semiconductor field-effect transistors (MOSFETs).
text: The metal–oxide–semiconductor field-effect transistor (MOSFET), also known as the MOS transistor, was invented by Mohamed Atalla and Dawon Kahng in 1959.
text: Metal-oxide-semiconductor field effect transistor (MOSFET): Type of field effect transistor in which metal oxide (like SiO2) is employed for insulation of the gate.
text: Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
text: The metal oxide semiconductor field effect transistor (MOSFET) is a FET whose gate is insulated from the main body of the transistor by a layer of metal oxide semiconductor (such as SiO 2 ).
text: Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
text: The most common type of FET in use, the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is frequently incorporated into computer memory design, as it offers higher speed with less energy consumption than BJTs.
text: The most common type of FET in use, the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is frequently incorporated into computer memory design, as it offers higher speed with less energy consumption than BJTs.
text: The Insulated-Gate Field-Effect Transistor (IGFET), also known as the Metal Oxide Field Effect Transistor (MOSFET), is a derivative of the field effect transistor (FET).
text: The metal–oxide–semiconductor field-effect transistor (MOSFET), also known as the MOS transistor, was invented by Mohamed Atalla and Dawon Kahng in 1959.
text: Even though its structure is very similar to a metal-oxide-semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics.
text: The metal–oxide–semiconductor field-effect transistor (MOSFET), which largely superseded the JFET and had a profound effect on digital electronic development, was invented by Dawon Kahng and Martin Atalla in 1959.
text: MOS Field Effect Transistor or MOSFET The Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) or
text: Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is most useful type of among all transistors.
text: The most important device for very-large-scale integrated circuits (those that contain more than 100,000 semiconductor devices such as diodes and transistors) is the metal-oxide-semiconductor field-effect transistor (MOSFET).
text: A thin-film transistor (TFT) is a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) made by depositing thin films of an active semiconductor layer as well as the dielectric layer and metallic contacts over a supporting (but non-conducting) substrate.
text: Metal Oxide Field Effect Transistor (MOSFET):
text: The metal–oxide–semiconductor field-effect transistor (MOSFET) was invented by Atalla and Kahng at Bell Labs.
text: There are two basic varieties of field effect transistors-the junction field effect transistor(JFET) and the metal oxide semiconductor field effect transistor (MOSFET).
text: Refinements of the FET design by other companies, especially RCA and Fairchild, resulted in the metal-oxide-semiconductor field-effect transistor (MOSFET) during the early 1960s.
text: Another common design for an SMD transistor is as a metal oxide semiconductor field-effect transistors (MOSFET).
text: The metal oxide semiconductor field-effect transistor (MOSFET), also referred to as the metal oxide silicon transistor, is a type of field effect transistor that has an insulated gate and is fabricated by controlled oxidation of a semiconductor, typically silicon.
text: The metal–oxide–semiconductor field-effect transistor (MOSFET) was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959.
text: The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
text: The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
text: MESFET transistorIn a metal-semiconductor field-effect transistor (MESFET),
text: Metal semiconductor field effect transistor (MESFET): (a) schematic symbol, (b) cross-section.
text: The Metal-Semiconductor Field Effect Transistor (MESFET) uses a Shottky barrier diode to isolate the channel from the gate.
text: The Metal semiconductor field effect transistor (MESFET) is similar to a JFET except the gate is a schottky diode instead of a junction diode.
text: The metal-semiconductor field-effect transistor (MESFET) is a unipolar device, because its conduction process involves predominantly only one kind of carrier.
text: Owing in part to scaling challenges for metal oxide semiconductor field-effect transistors (MOSFETs) and complementary metal oxide semiconductor (CMOS) logic, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide improved MOSFET performance beyond the 22 nm node, or provide novel functionality for, e.g. 'beyond CMOS' devices.
text: In this article, we compare and contrast junction field effect transistors (JFETs) and metal oxide semiconductor field effect transistors (MOSFETs).
text: So the above table is a good, brief explanation of some of the differences between junction field effect transistors (JFETs) and metal oxide semiconductor field effect transistors (MOSFETs).
text: In either case, these amplifier circuits use metal oxide semiconductor field-effect transistors (MOSFETs) as the source of amplification.