Assertion: fet's drain | /r/CapableOf | rectify p-n junctions
Facets:
Source sentences:
text: Although it looks similar to a MESFET, there are four major differences: (1) the source and drain of a MOSFET are rectifying p-n junctions instead of ohmic contacts; (2) the gate is a metal-oxide-semiconductor structure, meaning that there is an insulator—silicon dioxide (SiO 2 )—sandwiched between the metal electrode and the semiconductor substrate, while for the MESFET the gate electrode forms a metal-semiconductor contact; (3) the left edge of the gate electrode must be aligned or overlapped with the source contact to facilitate device operation, while in a MESFET there is no overlapping of gate and source contact; and (4) the MOSFET is a four-terminal device, so that there is a fourth substrate contact in addition to the source, drain, and gate electrode, as in the case of a MESFET.