Assertion: tunnel fet | /r/HasSubevent | low subthreshold swing devices
Facets:
Source sentences:
text: Although the OFF-state leakage in GFETs can be large due to band-to-band tunnelling, this same tunnelling can potentially be exploited in GNRs, or perhaps bilayers with interlayer-field-induced gaps as discussed above, to make tunnelling-based FETs which could perhaps lead to low voltage, low power and low subthreshold swing devices .