Assertion: fet | /r/HasAspect | a gate electrode
Facets:
value: for controlling conduction
type: PURPOSE
Source sentences:
text: The memory of claim 3 wherein said storage device is another field-effect transistor having first and second terminals and a gate electrode for controlling conduction between said terminals, and which exhibits capacitance between its gate electrode and substrate, said first terminal of said input transistor being connected to the gate electrode of said another transistor, said word line being connected to the first terminal of said another transistor, and said bit line being connected to the second terminal of said another transistor.
text: The memory of claim 15 wherein each of said cells include a third field-effect transistor having its gate electrode and one of its terminals connected to the gate electrode of said another field-effect transistor and having its other terminal connected to said bit line for said cell.