Assertion: gate | /r/HasProperty | -insulator
Facets:
Source sentences:
text: In a p-channel "depletion-mode" device, a positive voltage from gate to body widens the depletion layer by forcing electrons to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, positively charged acceptor ions.
text: This ease-of-flow threshold also applies to p-channel depletion-mode devices, in which a negative voltage from gate to body/source creates a depletion layer by forcing the positively charged holes away from the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions.