Assertion: insulated gate field effect transistor | /r/HasProperty | igfet
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text: The insulated-gate field-effect transistor (IGFET) was theorized as a potential alternative to junction transistors, but researchers were unable to build working IGFETs, largely due to the troublesome surface state barrier that prevented the external electric field from penetrating into the material.
text: Insulated-gate field-effect transistors (IGFETs), more commonly known as the metal-oxide semiconductor field-effect transistors (abbreviated MOSFETs or MOSTs).
text: The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
text: The basic principle of the field-effect transistor (FET) was first proposed by Austro-Hungarian physicist Julius Edgar Lilienfeld in 1926, when he filed the first patent for an insulated-gate field-effect transistor (IGFET).
text: Metal–insulator–semiconductor field-effect-transistor, or MISFET, is a more general term than MOSFET and a synonym to insulated-gate field-effect transistor (IGFET).
text: The Insulated-Gate Field-Effect Transistor (IGFET), also known as the Metal Oxide Field Effect Transistor (MOSFET), is a derivative of the field effect transistor (FET).
text: This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor (IGFET)
text: Insulating film usually silicon dioxides (SiO2), because of this insulating property MOSFET is also known as Insulated Gate Field Effect Transistor (IGFET).