Assertion: thin film circuit board | /r/CapableOf | form an insulator layer
Facets:
Source sentences:
text: This thin film circuit board can be manufactured by a method including: forming an insulator layer having a relatively high etching rate at a prescribed thickness on an insulator layer having a relatively low etching rate and relatively high dielectric constant; arranging a conductor layer on said insulator layer having a relatively high etching rate; selectively removing the insulator having a relatively high etching rate, excluding a prescribed portion located beneath the conductor layer, by etching; forming an insulator portion that contains the insulator layer having a relatively high etching rate and supports the above-mentioned conductor layer in the undercut state; forming an insulator layer having a relatively low dielectric constant so as to surround the entire conductor layer; and, forming an insulator layer having a relatively high dielectric constant on top of the insulator layer having a relatively low dielectric constant so as to surround said entire insulator layer having a relatively low dielectric constant.
text: This thin film circuit board can be manufactured by a method including: forming an insulator layer having a relatively high etching rate at a prescribed thickness on an insulator layer having a relatively low etching rate and relatively high dielectric constant; arranging a conductor layer on said insulator layer having a relatively high etching rate; selectively removing the insulator having a relatively high etching rate, excluding a prescribed portion located beneath the conductor layer, by etching; forming an insulator portion that contains the insulator layer having a relatively high etching rate and supports the above-mentioned conductor layer in the undercut state; forming an insulator layer having a relatively low dielectric constant so as to surround the entire conductor layer; and, forming an insulator layer having a relatively high dielectric constant on top of the insulator layer having a relatively low dielectric constant so as to surround said entire insulator layer having a relatively low dielectric constant.
text: The thin film circuit board according to the second embodiment the present invention can be manufactured by a method including: forming a barrier layer on an insulator layer having a relatively high dielectric constant; forming a second insulator layer at a prescribed thickness on the barrier layer; arranging a conductor layer on the second insulator layer; selectively removing the second insulator layer, excluding a prescribed portion located beneath the conductor layer, by etching; forming an insulator portion composed of the second insulator that supports the conductor layer in the undercut state; forming an insulator layer having a relatively low dielectric constant so as to surround the entire conductor layer; and, forming an insulator layer having a relatively high dielectric constant on top of the insulator layer having a relatively low dielectric constant so as to surround said entire insulator layer having a relatively low dielectric constant.
text: The thin film circuit board according to the second embodiment the present invention can be manufactured by a method including: forming a barrier layer on an insulator layer having a relatively high dielectric constant; forming a second insulator layer at a prescribed thickness on the barrier layer; arranging a conductor layer on the second insulator layer; selectively removing the second insulator layer, excluding a prescribed portion located beneath the conductor layer, by etching; forming an insulator portion composed of the second insulator that supports the conductor layer in the undercut state; forming an insulator layer having a relatively low dielectric constant so as to surround the entire conductor layer; and, forming an insulator layer having a relatively high dielectric constant on top of the insulator layer having a relatively low dielectric constant so as to surround said entire insulator layer having a relatively low dielectric constant.