Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks
Authors: Robert Mroczyński, Norbert Kwietniewski, Piotr Konarski
Published in: Microelectronic Engineering
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2