Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Authors: P. Holewa, M. Gawełczyk, A. Maryński, P. Wyborski, J. P. Reithmaier, G. Sęk, M. Benyoucef, M. Syperek
Publication type: article