Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed
Authors: T. Sochacki, S. Sintonen, J. L. Weyher, M. Amilusik, A. Sidor, M. Bockowski
Published in: JAPANESE JOURNAL OF APPLIED PHYSICS
Publication type: article
Subject areas: Engineering; Physics and Astronomy
SJR best quartile: Q3