Low frequency noise and trap density in GaN/AlGaN field effect transistors
Authors: P. Sai, J. Jorudas, M. Dub, M. Sakowicz, V. Jakštas, D. B. But, P. Prystawko, G. Cywinski, I. Kašalynas, W. Knap and S. Rumyantsev
Published in: Applied Physics Letters
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q1