Interface traps in Al/SiO2/HfO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique
Authors: Mariusz Sochacki, Krystian Król, Michał Waśkiewicz, Katarzyna Racka, Jan Szmidt
Published in: Microelectronic Engineering
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2