Influence of AlN layer on electric field distribution in GaN/AlGaN/GaN transistor heterostructures
Authors: M. Gladysiewicz, R. Kudrawiec, J. Misiewicz, K. Klosek, M. Sobanska, J. Borysiuk, and Z. R. Zytkiewicz
Published in: Journal of Applied Physics
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q2