The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
Authors: K. Król, P. Konarski, M. Miśnik, M. Sochacki, J. Szmidt
Published in: Acta Physica Polonica A
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q4