Material Gain in Ga0.66In0.34NyAs1−y, GaNyAs0.69−ySb0.31, and GaNyP0.46Sb0.54−y Quantum Wells Grown on GaAs Substrates: Comparative Theoretical Studies
Authors: M. Gladysiewicz, R. Kudrawiec, M. S. Wartak,
Published in: IEEE Journal of Quantum Electronics
Publication type: article
Subject areas: Engineering; Physics and Astronomy
SJR best quartile: Q2