Unusual meandering of atomic steps due to Ehrilch-Schwoebel barrier in GaN epitaxy on the N-polar surface
Authors: H. Turski, F. Krzyzewski, A. Feduniewich-Żmuda, P. Wolny, M. Siekacz, G. Muzioł, C. Cheze, K. Nowakowski-Szukudlarek, H. Xing, D. Jena, M. Załuska-Kotur, C. Skierbiszewski
Published in: Applied Surface Science
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q1