MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors
Authors: P. Madejczyk, W. Gawron, P. Martyniuk, A. Kębłowski, A. Piotrowski, J. Pawluczyk, W. Pusz, A. Kowalewski, J. Piotrowski, A. Rogalski
Published in: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2