The p -ZnO:N/ i -Al 2 O 3 / n -GaN heterostructure—electron beam induced profiling, electrical properties and UV detectivity
Authors: Przezdziecka E, Chusnutdinow S, Guziewicz E, Singurenko D, Satchowicz M, Kopako K, Kozanecki A
Published in: Journal of Physics D: Applied Physics, Wydawca:IOP PUBLISHING LTD
Publication type: article
Subject areas: Materials Science; Physics and Astronomy
SJR best quartile: Q1