Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
Authors: P. Kruszewski, P. Kamiński, R. Kozłowski , J. Żelazko , R. Czernecki , M. Leszczyński, A. Turos3
Published in: Semiconductor Science and Technology, Wydawca:IOP Publishing LTD
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2