Indium incorporation in semipolar (20-21) and nonpolar (10-10) InGaN grown by plasma assisted molecular beam epitaxy
Authors: M. Sawicka, A. Feduniewicz-Żmuda, M. Kryśko, H. Turski, G. Muziol, M. Siekacz, P. Wolny, C. Skierbiszewski
Published in: Journal of Crystal Growth
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q2