Ultraviolet laser diodes grown on semipolar (20-21) GaN substrates by plasma-assisted molecular beam epitaxy
Authors: M. Sawicka, G. Muziol, H. Turski, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, J. L. Weyher, C. Cheze, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski
Published in: Applied Physics Letters
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q1