AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
Authors: P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap and G. Cywiński
Published in: Semiconductor Science and Technology
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2