Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/ AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
Authors: M. Matys, S. Kaneki, K. Nishiguchi, B. Adamowicz, and T. Hashizume
Published in: Journal of Applied Physics
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q2