Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient
Authors: Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Kacper Sierakowski, Masahiro Horita, Michal Bockowski, Tetsu Kachi, and Jun Suda
Published in: Applied Physics Express
Publication type: article
Subject areas: Engineering; Physics and Astronomy
SJR best quartile: Q2