Homoepitaxial growth of HVPE-GaN doped with Si
Authors: M. Iwinska, T.Sochacki, M.Amilusik, P.Kempisty, B.Lucznik, M.Fijalkowski, E. Litwin-Staszewska, J.Smalc-Koziorowska, A.Khapuridze, G.Staszczak, I.Grzegory, M. Bockowski
Published in: Journal of Crystal Growth
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q2