Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOx alloys
Authors: M. Wełna, M. Baranowski, R. Kudrawiec, Y. Nabetani, and W. Walukiewicz
Published in: Semiconductor Science and Technology
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2