Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE
Authors: J. Plesiewicz, P. Kruszewski, V.P. Markevich, P. Prystawko, S. Bulka, M. Hallsal , I. Crowe, L. Sun, A.R. Peake
Published in: Microelectronic Engineering(), Wydawca:Elsevier
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2