p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
Authors: D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
Published in: Journal of Semiconductor Technology and Science
Publication type: article
Subject areas: Engineering; Materials Science
SJR best quartile: Q3