Role of the Hafnium Dioxide Spacer in the ZnOBased Planar Schottky Diodes Obtained by the Low-Temperature Atomic Layer Deposition Method: Investigations of Current–Voltage Characteristics
Authors: Adam J. Zakrzewski, Tomasz A. Krajewski, Grzegorz Luka, Krzysztof Goscinski, Elzbieta Guziewicz, and Marek Godlewski
Published in: IEEE TRANSACTIONS ON ELECTRON DEVICE
Publication type: article
Subject areas: Engineering; Materials Science
SJR best quartile: Q2