Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
Authors: Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig R. Wasilewski, Sylwester Porowski and Czeslaw Skierbiszewski
Published in: Japanese Journal of Applied Physics
Publication type: article
Subject areas: Engineering; Physics and Astronomy
SJR best quartile: Q3