MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications
Authors: 4.Mateu Mateusz Wośko, Tomasz Szymański, Bogdan Paszkiewicz, Piotr Pokryszka, Regina Paszkiewicz,
Published in: Journal of Materials Science. Materials in Electronics
Publication type: article
Subject areas: Biochemistry, Genetics and Molecular Biology; Chemical Engineering; Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2