Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
Authors: Lachowski, A, Grzanka, E, Czernecki, R, Grabowski, M, Grzanka, Sz,, Leszczynski, M, Smalc-Koziorowska, J
Published in: Materilas Science in Semiconductor Processing
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q1