GaN/AlN superlattice high electronmobility transistor heterostructureson GaN/Si(111)
Authors: Mateusz Wośko, Bogdan Paszkiewicz, Andrej Vincze, Tomasz Szymański, Regina Paszkiewicz
Published in: Phys. Status Solidi B
Publication type: article
Subject areas: Materials Science; Physics and Astronomy
SJR best quartile: Q3