New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates
Authors: A. Kowalewski, P. Martyniuk, O. Markowska, D. Benyahia, W. Gawron
Published in: Materials Science in Semiconductor Processing
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q1