Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements
Authors: L. Ciura, A. Kolek, E. Gomółka, K. Murawski, M. Kopytko, P. Martyniuk and A. Rogalski
Published in: Semiconductor Science and Technology
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2