Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
Authors: K. Murawski, K. Majkowycz, M. Kopytko, P. Martyniuk
Published in: Journal of Electronic Materials(), Wydawca:Springer
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2