Selective area formation of GaN nanowires on GaN substrates by the use of amorphous AlxOy nucleation layer
Authors: Marta Sobanska, Zbigniew R Zytkiewicz, Kamil Klosek, Renata Kruszka, Krystyna Golaszewska, Marek Ekielski, Sylwia Gieraltowska
Published in: Nanotechnology
Publication type: article
Subject areas: Chemical Engineering; Chemistry; Engineering; Materials Science
SJR best quartile: Q2