Influence of V/III ratio during MOVPE GaN buffer growth on the properties of AlGaN/GaN/SiN/AlN/Si(111) structures for HEMT purposes
Authors: Szymański Tomasz, Wośko Mateusz M, Paszkiewicz Bogdan, Serafińczuk Jarosław, Drzik Milan, Paszkiewicz Regina
Published in: 16th European Workshop on Metalorganic Vapour Phase Epitaxy
Publication type: conference