Investigation of beryllium diffusion in HVPE-GaN grown in [11-20] and [10-10] crystallographic directions
Authors: Kacper Sierakowski, Rafal Jakiela, Michal Fijalkowski, Tomasz Sochacki, Malgorzata Iwinska, Pawel Kempisty, Marcin Turek, Michal Bockowski
Published in: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q1