Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal-organic vapour phase epitaxy,
Authors: T. Szymański, M. Wośko, M. Wzorek, B. Paszkiewicz, R. Paszkiewicz
Published in: CrystEngComm
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q2