Ultra-shallow Ion Implantation from RF plasma and its effect on electro-physical properties of MOS structures with SiOx/HfOx double-gate dielctric layers fabricated on Si and 4H-SiC
Authors: Robert Mroczyński, Małgorzata Kalisz, Jakub Jasiński, Norbert Kwietniewski, Magdalena Dominik, Romuald B. Beck, Jan Szmidt
Published in: XII Konferencja Naukowa Technologia Elektronowa (ELTE)
Publication type: conference