Influence of phosphorus implantation on electrical properties of Al/SiO2/4H-SiC MOS structure
Authors: Krystian Król, Mariusz Sochacki, Marcin Turek, Jerzy Żuk, Paweł Borowicz, Dominika Teklińska, Piotr Konarski, Maciej Miśnik, Alina Domanowska, Anna Michalewicz, Jan Szmidt
Published in: Materials Science Forum
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q4