The electronic band structure of Ge1−xSnx in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
Authors: Maciej P. Polak, Pawel Scharoch, Robert Kudrawiec
Published in: Journal of Physics D: Applied Physics
Publication type: article
Subject areas: Materials Science; Physics and Astronomy
SJR best quartile: Q1