Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
Authors: Kachi, Tetsu; Narita, Tetsuo ; Sakurai, Hideki ; Matys, Maciej ; Kataoka, Keita ; Hirukawa, Kazufumi ; Ikarashi, Nobuyuki ; Sierakowski, Kacper ; Bockowski, Michal ; Suda, Jun
Published in: JOURNAL OF APPLIED PHYSICS(tom: Volume 132 Issue 13 Article Number 130901, strony: ), Wydawca:AIP Publishing
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q2