Electronic band structure of compressively strained Ge1-xSnx with x<0.11 studied by contactless electroreflectance
Authors: K. Zelazna, M. P. Polak, P. Scharoch, J. Serafinczuk, M. Gladysiewicz, J. Misiewicz, J. Dekoster, and R. Kudrawiec
Published in: Applied Physics Letters, Wydawca:American Institute of Physics
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q1