Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics.
Authors: Dub, M.; Sai, P.; Sakowicz, M.; Janicki, L.; But, D.B.; Prystawko, P.; Cywinski, G.; Knap,W.; Rumyantsev, S.
Published in: Micromachines
Publication type: article
Subject areas: Engineering
SJR best quartile: Q2