Two-stage reactive ion etching of AlGaN/GaN high electron mobility transistor type heterostructures
Authors: Sławomir Owczarzak, Andrzej P. Stafiniak, Regina Paszkiewicz
Published in: Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics.
Publication type: article
Subject areas: Chemical Engineering; Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q3