Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
Authors: Bartosz Lasek, Przemysław Trochimiuk, Rafał Kopacz, Jacek Rąbkowski
Published in: Applied Sciences
Publication type: article
Subject areas: Chemical Engineering; Computer Science; Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q2