Influence Of Phosphorus Implantation On Electrical Properties Of Al/SiO2/4H-SiC MOS structure
Authors: K. Król, M. Sochacki, M. Turek, J. Żuk, P. Borowicz, D. Teklińska, P. Konarski, M. Miśnik, A. Domanowska, A. Michalewicz, J. Szmidt
Published in: Material Science Forum
Publication type: article
Subject areas: Engineering; Materials Science; Physics and Astronomy
SJR best quartile: Q4