Effect of Ultra-High-Pressure Annealing on Defect Reactions in Ion-Implanted GaN Studied by Positron Annihilation
Authors: Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi
Published in: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Publication type: article
Subject areas: Materials Science; Physics and Astronomy
SJR best quartile: Q3