Impacts of thermal stress and doping on intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt
Authors: J. Vanhellemont, E. Kamiyama, K. Nakamura, P. Śpiewak and K. Sueoka
Published in: Journal of Crystal Growth
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q2