High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
Authors: M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Yan Guan, Pegah Bagheri, Dennis Szymanski, Seiji Mita, Kacper Sierakowski, Michał Bockowski, Ramon Collazo, and Zlatko Sitar
Published in: Applied Physics Letters
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q1