Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers
Authors: H. Turski, M. Siekacz, Z.R. Wasilewski, M. Sawicka, S. Porowski, C. Skierbiszewski
Published in: Journal of Crystal Growth
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q2