Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters
Authors: P. Holewa, M. Gawełczyk, A. Maryński, P. Wyborski, J. P. Reithmaier, G. Sęk, M. Benyoucef, M. Syperek
Published in: Physical Review Applied
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q1