Deep levels in the MBE ZnO:As/n-GaN diodes - Photoluminescence, electrical properties and deep level transient spectroscopy
Authors: E. Zielony, E. Przezdziecka, E. Placzek-Popko, W. Lisowski, M. Stachowicz, K.M. Paradowska, R. Jakieła, A. Kozanecki
Published in: Journal of Alloys and Compounds
Publication type: article
Subject areas: Engineering; Materials Science
SJR best quartile: Q1