Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis
Authors: Kenji Iwata, Hideki Sakurai, Shigeo Arai, Takuya Nakashima, Tetsuo Narita, Keita Kataoka, Michal Bockowski, Masaharu Nagao, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
Published in: Journal of Applied Physics
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q1