Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a -Plane GaN Substrates
Authors: Corfdir Pierre, Dussaigne Amélie, Teisseyre Henryk, Suski Tadeusz, Grzegory, Izabella, Lefebvre Pierre, Giraud Etienne, Shahmohammadi Mehran, Phillips Richard, Ganière Jean-Daniel, Grandjean Nicolas, Deveaud Benoît.
Published in: Japanese Journal of Applied Physics
Publication type: article
Subject areas: Engineering; Physics and Astronomy
SJR best quartile: Q3