Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration
Authors: Takuya Nakashima, Emi Kano, Keita Kataoka, Shigeo Arai, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Masahiro Nagao, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
Published in: Applied Physics Express
Publication type: article
Subject areas: Engineering; Physics and Astronomy
SJR best quartile: Q2