Defect States and Excitations in a Mott Insulator with Orbital Degrees of Freedom: Mott-Hubbard Gap versus Optical and Transport Gaps in a Doped System
Authors: A. Avella, P. Horsch, and A. M. Oles
Published in: Physical Review B
Publication type: article
Subject areas: Materials Science; Physics and Astronomy
SJR best quartile: Q1