Strain relaxation in semipolar (20-21) InGaN grown by plasma assisted molecular beam epitaxy
Authors: M. Sawicka, M. Krysko, G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Smalc-Koziorowska, C. Skierbiszewski
Published in: Journal of Applied Physics
Publication type: article
Subject areas: Physics and Astronomy
SJR best quartile: Q2