Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer
Authors: A. Wierzbicka, G. Tchutchulashvili, M. Sobanska, K. Klosek, R. Minikayev, J. Z. Domagala, J. Borysiuk, Z. R. Zytkiewicz
Published in: Applied Surface Science
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q1