Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds
Authors: M. Amilusik, T. Sochacki, M. Fijalkowski, B. Lucznik, M. Iwinska, A. Sidor, H. Teisseyre, J. Domagala, I. Grzegory, M Bockowski
Published in: JAPANESE JOURNAL OF APPLIED PHYSICS
Publication type: article
Subject areas: Engineering; Physics and Astronomy
SJR best quartile: Q3