Growth and coalescence control of inclined caxis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy
Authors: Szymański Tomasz, Wośko Mateusz M, Paszkiewicz Bartłomiej, Paszkiewicz Bogdan, Paszkiewicz Regina, Sankowska Iwona
Published in: Journal of Vacuum Science & Technology A
Publication type: article
Subject areas: Materials Science; Physics and Astronomy
SJR best quartile: Q2