Improvement of electro-physical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx stacks by means of ultra-shallow ion implantation from RF plasma
Authors: R. Mroczyński, N. Kwietniewski, P. Konarski
Published in: Insulating films on semiconductors - INFOS 2017
Publication type: conference