Donor-deactivating defects above the equilibrium doping limit in GaAs:Te,Ge and GaAs:Te studied by annealing and Hall eﬀect under pressure
Authors: T. Slupinski, D. Wasik, J. Przybytek
Published in: Journal of Crystal Growth
Publication type: article
Subject areas: Chemistry; Materials Science; Physics and Astronomy
SJR best quartile: Q2