Title: Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a -Plane GaN Substrates
Authors: Corfdir Pierre, Dussaigne Amélie, Teisseyre Henryk, Suski Tadeusz, Grzegory, Izabella, Lefebvre Pierre, Giraud Etienne, Shahmohammadi Mehran, Phillips Richard, Ganière Jean-Daniel, Grandjean Nicolas, Deveaud Benoît.
Journal: Japanese Journal of Applied Physics
Publication type: article
DOI: 10.7567/JJAP.52.08JC01