Title: Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE
Authors: J. Plesiewicz, P. Kruszewski, V.P. Markevich, P. Prystawko, S. Bulka, M. Hallsal , I. Crowe, L. Sun, A.R. Peake
Journal: Microelectronic Engineering(), Wydawca:Elsevier
Publication type: article
DOI: 10.1016/j.mee.2023.111977