Title: The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
Authors: K. Król, P. Konarski, M. Miśnik, M. Sochacki, J. Szmidt
Journal: Acta Physica Polonica A
Publication type: article
DOI: 10.12693/APhysPolA.126.1100