Title: Influence Of Phosphorus Implantation On Electrical Properties Of Al/SiO2/4H-SiC MOS structure
Authors: K. Król, M. Sochacki, M. Turek, J. Żuk, P. Borowicz, D. Teklińska, P. Konarski, M. Miśnik, A. Domanowska, A. Michalewicz, J. Szmidt
Journal: Material Science Forum
Publication type: article
DOI: 10.4028/www.scientific.net/MSF.821-823.496