Title: Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks
Authors: Robert Mroczyński, Norbert Kwietniewski, Piotr Konarski
Journal: Microelectronic Engineering
Publication type: article
DOI: 10.1016/j.mee.2017.05.017