Title: Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed
Authors: T. Sochacki, S. Sintonen, J. L. Weyher, M. Amilusik, A. Sidor, M. Bockowski
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
Publication type: article
DOI: 10.7567/1347-4065/ab0f15