Title: p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
Authors: D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
Journal: Journal of Semiconductor Technology and Science
Publication type: article
DOI: 10.5573/JSTS.2016.16.5.695