Title: Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements
Authors: L. Ciura, A. Kolek, E. Gomółka, K. Murawski, M. Kopytko, P. Martyniuk and A. Rogalski
Journal: Semiconductor Science and Technology
Publication type: article
DOI: 10.1088/1361-6641/ab3c02