Title: Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal-organic vapour phase epitaxy,
Authors: T. Szymański, M. Wośko, M. Wzorek, B. Paszkiewicz, R. Paszkiewicz
Journal: CrystEngComm
Publication type: article
DOI: 10.1039/C6CE01804A