Title: Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/ AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
Authors: M. Matys, S. Kaneki, K. Nishiguchi, B. Adamowicz, and T. Hashizume
Journal: Journal of Applied Physics
Publication type: article
DOI: 10.1063/1.5000497