Title: MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications
Authors: 4.Mateu Mateusz Wośko, Tomasz Szymański, Bogdan Paszkiewicz, Piotr Pokryszka, Regina Paszkiewicz,
Journal: Journal of Materials Science. Materials in Electronics
Publication type: article
DOI: 10.1007/s10854-019-00702-9