Title: Donor-deactivating defects above the equilibrium doping limit in GaAs:Te,Ge and GaAs:Te studied by annealing and Hall eﬀect under pressure
Authors: T. Slupinski, D. Wasik, J. Przybytek
Journal: Journal of Crystal Growth
Publication type: article
DOI: 10.1016/j.jcrysgro.2016.11.031