Title: Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers
Authors: H. Turski, M. Siekacz, Z.R. Wasilewski, M. Sawicka, S. Porowski, C. Skierbiszewski
Journal: Journal of Crystal Growth
Publication type: article
DOI: 10.1016/j.jcrysgro.2012.12.026