Title: Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
Authors: P. Kruszewski, P. Kamiński, R. Kozłowski , J. Żelazko , R. Czernecki , M. Leszczyński, A. Turos3
Journal: Semiconductor Science and Technology, Wydawca:IOP Publishing LTD
Publication type: article
DOI: 10.1088/1361-6641/abe317