Title: The electronic band structure of Ge1−x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
Authors: M. P. Polak, P. Scharoch, and R. Kudrawiec
Journal: Phys. D: Appl. Phys
Publication type: article
DOI: 10.1088/1361-6463/aa67bfJ