伊賀健一
主な論文

[1977IGA] Iga, K., Laboratory Notebook, March 22 (1977).
[1978KIT] Kitahara C., T. Kambayashi and K. Iga, "GaInAsP/InP Surface Emitting Laser (II)," The 39th Fall Meeting ofApplied Phys. Societies, 5p-Z-1, p.497, Nov. (1978)
[1979SOD] Soda H., K. Iga, C. Kitahara and Y. Suematsu, “GaInAsP/InP Surface-Emitting Injection Lasers,” Jpn. J. Appl. Phys., vol. 18, no. 12, pp. 2329-2330, Dec. (1979)
[1981OIK] Oikawa M. , M. Sanada, Kenichi Iga, N. Yamamoto, and K. Nishizawa, "Array of distributed-index planar micro-lenses prepared from ion exchange technique," Jpn. J. Appl. Phys., Vol. 20, No. 4, pp. L296-L298, Apr. 1981.
[1982MOT] Motegi Y., H. Soda, and K. Iga, “Surface-Emitting GaInAsP/InP Injection Laser with Short Cavity Length,” Electron.Lett., Vol. 18, No. 11, pp. 461-463, May (1982)
[1982IGA] Iga K., M. Oikawa, S. Misawa, J. Banno, and Y. Kokubun, "Stacked planar optics an application of the planar microlens,"Appl. Opt., Vol. 21, No. 19, pp. 3456-3460, Oct. 1982
[1987IGA] Iga, K., S. Kinoshita, and F. Koyama, “Micro-cavity GaAlAs/GaAs Surface-Emitting laser with Ith=6 mA,” Electron. Letters, Vol. 23, No. 3, pp. 134-136, 29th, Jan. (1987)
[1988IGA] Iga, K., F. Koyama, and S. Kinoshita, “Surface Emitting Semiconductor Lasers,” IEEE J. Quantum Electronics,Vol. 24, No. 9, pp. 1845-1855, Sept. (1988)
[1988KOY] Koyama F., S. Kinoshita and K. Iga, “Room temperature CW operation of GaAs vertical cavity surface emitting Laser,” Trans. IEICE, Vol. E71, No. 11, pp. 1089-1090, Nov. (1988)
[1989KOY] Koyama F. , Kinoshita S. , and K. Iga, "Room temperature continuous lasing characteristics of a GaAs vertical Cavity surface emitting laser", Appl. Phys. Lett. 55(3), 221-222 (1989).
[1992YOK] Yokouchi N., T. Miyamoto, T, Uchida, Y, Inaba, F. Koyama, and K. Iga: "40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror," IEEE Photon. Technol. Lett., vol. 4, no. 7, pp. 701-703, July (1992)
[1993BAB] Baba T., Y. Yogo, K. Suzuki, F. Koyama and K. Iga, “First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser,” IEICE Trans. Electron., Vol. E76-C, No. 9, pp. 1423-1424, Sept. (1993)
[1995HAY] Hayashi Y., T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, and K. Iga, “Record low-threshold Index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure”, Electron. Lett., Vol. 31, No. 7, pp. 560-562, Mar. (1995)
[1997MIY] Miyamoto T, K. Takeuchi, F. Koyama, and K. Iga, "A novel GaInNAs-GaAs quantum well structure for long wavelength semiconductor lasers", IEEE Photon. Tech. Lett., Vol. 9, No 11, Nov. (1997)
[1999NIS] N. Nishiyama, A. Mizutani, N. Hatori, M. Arai, F. Koyama, and K. Iga: “Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs [311] B substrate,” IEEE J. Select. Top. Quantum Electron., vol. 5, no. 3, pp. 530-536 (1999).
[2000IGA] Iga, K., “Vertical cavity surface emitting laser - Its birth and generation of new optoelectronics field”, IEEE J. Selected Topics in Quantum Electron., Vol.6, No.6, pp.1201-1215, Nov./Dec., (2000)
[2018IGA] Iga, K. "Forty Years of VCSEL: Invention and Innovation (Review) ", Japanese J. Applied Physics, 57(8S2)1-7(2018)
[2020IGA] Iga K. : "VCSEL: Born Small and Grown Big", Proc. SPIE 11263, Vertical External Cavity Surface Emitting Lasers (VECSELs) X, 1126302 (2 March 2020); doi:10.1117/12.2554953
図1 面発光レーザーの最初のアイデア（1977.3.22 Hand-writen by Iga 主な論文[2018IGA]，主な著書{2020IGAd}）
図2 最初の面発光レーザー（1979) Drawn by Iga, 主な論文[1979SOD]
図3 面発光レーザーの活性層直径と応用範囲の分類，Originally drawn by Iga,主な論文[2018IGA],[2020IGA]