אפיטקסיה מפאזת אדים אורגנומתכתיים
הערות שוליים

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↑  H.M. Manasevit, The Use of Metal‐Organics in the Preparation of Semiconductor Materials: III. Studies of Epitaxial III ‐ V Aluminum Compound Formation Using Trimethylaluminum, Journal of The Electrochemical Society 118/4, 1971, עמ' 647
↑  H. M. Manasevit, F. M. Erdmann and W. I. Simpson, The Use of Metalorganics in the Preparation of Semiconductor Materials: IV. The Nitrides of Aluminum and Gallium, Journal of The Electrochemical Society 118/11, 1971, עמ' 1864
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↑  CyOptics Opens InP Plant, Light Reading, ‏February 4, 2002
↑  A. Cohen et al., Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS2 on Sapphire, ACS Nano 17, 2023, עמ' 5399–5411
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↑  Israel Center for Advanced Photonics, ‏Retrieved on September 22, 2023
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↑  לא תמיד זה אפשרי. למשל, בהומואפיטקסיה של InSb מצוי תחום הסעת המסה מעל לטמפרטורת ההיתוך של המצע. לכן, יש לעבוד בטמפרטורה נמוכה שבה הפירוליזה של המקורות אינה מושלמת.
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↑  X. Zhang et al., Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor, Journal of Crystal Growth 170, 1997, עמ' 83
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↑  B. Mitrovic et al., Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors, Journal of Crystal Growth 289/2, 2006, עמ' 708
↑  J.-P. Duchemin, Low-Pressure MOVPE: The time of the pioneers, Journal of Crystal Growth 601, 2023, עמ' 126939
מבעבע של Magnesium bis-cyclopentadienyl (MgCp2)
התהליכים המתרחשים במהלך גידול MOVPE
גרף סכמתי של תלות קצב הגידול ב-MOVPE כפונקציה של הופכי הטמפרטורה, המראה את שלושת תחומי הגידול
תיאור סכמתי של מערכת גידול MOVPE