Please read the following table in Markdown format and then answer the question according to the table. Table cells in one row are seperated by '|', and different rows are seperated by '
'.

Table:
| Material | Type | Geometry | Output voltage | Output power | Synthesis | Researched at |
| --- | --- | --- | --- | --- | --- | --- |
| ZnO (n-type) | Wurtzite | D: ~100nm, L: 200~500nm | V P =~9 mV @ R=500MΩ | ~0.5 pW per cycle (estimated) | CVD, hydrothermal process | Georgia Tech. |
| ZnO (p-type) | Wurtzite | D: ~50nm, L: ~600nm | V P =50~90 mV @ R=500MΩ | 5~16.2 pW per cycle (calculated) | CVD | Georgia Tech. |
| ZnO-ZnS | Wurtzite (Heterostructure) | Not stated | V P =~6 mV @ R=500MΩ | ~0.1 pW per cycle (calculated) | Thermal evaporation and etching | Georgia Tech. |
| GaN | Wurtzite | D: 25~70nm, L: 10~20 μm | V avg =~20 mV,V max =~0.35 V@ R=500MΩ | ~0.8 pW per cycle (average, calculated) | CVD | Georgia Tech. |
| CdS | Wurtzite | D: ~100nm, L: 1 μm | V P =~3 mV | Not stated | PVD, Hydrothermal Process | Georgia Tech. |
| BaTiO 3 | Pervoskite | D: ~280nm, L: ~15 μm | V P =~25 mV @ R=100MΩ | ~0.3 aJ per cycle (stated) | High temperature chemical reaction | UIUC |
Question:
Where was d: ~100nm, l: 1 μm geometry researched?
Answer:
Georgia Tech.