Search query: interface states capture cross section

Related papers:

abstract: The energy distribution profile of the interface states (N"s"s) and their relaxation time @t) and capture cross section @s"p) of metal insulator semiconductor (Al/SiO"2/p Si) Schottky diodes have been investigated by using the high low frequency capacitance and conductance methods. The capacitance voltage (C V) and conductance voltage (G/@w V) characteristics of these devices were investigated by considering series resistance (R"s) effects in a wide frequency range (5kHz 1MHz. It is shown that the capacitance of the Al/SiO"2/p Si Schottky diode decreases with increasing frequency. The increase in capacitance especially at low frequencies results form the presence of interface states at Si/SiO"2 interface. The energy distributions of the interface states and their relaxation time have been determined in the energy range of (0.362 E"v) (0.512 E"v)eV by taking into account the surface potential as a function of applied bias obtained from the measurable C V curve (500Hz) at the lowest frequency. The values of the interface state density (N"s"s) ranges from 2.34x10^1^2 to 2.91x 10^1^2eV^ ^1/cm^2, and the relaxation time @t) ranges from 1.05x10^ ^6 to 1.58x10^ ^4s, showing an exponential rise with bias from the top of the valance band towards the mid gap.
author_names: Semsettin Altindal

Halide Esra Kanbur

Ibrahim Yucedag

Adem Tataroglu
title: On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p Si (MIS) Schottky diodes
year: 2008

abstract: A modified form of deep level transient spectroscopy (DLTS) has been employed to perform energy resolved measurements of Si SiO2 interface states. Decreasing the height of the trap filling pulse from the order of volts, as in the usual DLTS procedure, to tens of millivolts allows trap filling measurements to be made, rendering possible the use of Shockley Read Hall theory to show that the degeneracy factor of interface states is around unity. The energy dependence of the capture cross section in the upper band gap is also calculated from Shockley Read Hall theory and is contrasted for oxidation ambients with and without added HCl.
author_names: Wendell D Eades

Richard M Swanson
title: Determination of the capture cross section and degeneracy factor of Si SiO2 interface states
year: 1984

abstract: P/sub b/ centers dominate radiation induced interface defects. On the (100) Si/SiO/sub 2/ interface, the P/sub b0/ center dominates radiation damage, but another center, the P/sub b1/ plays a secondary role. Neither the electronic density of states nor the capture cross section of this center are well established. This study provides information about both the density of states and capture cross section of P/sub b1/ The study also shows that some refinement is required in techniques utilized to separate interface trap space charge from space charge in the oxide.
author_names: Patrick M Lenahan

N A Bohna

J P Campbell
title: Radiation induced interface traps in MOS devices: capture cross section and density of states of P/sub b1/ silicon dangling bond centers
year: 2002

abstract: The evolution of the capture cross section of the Si SiO2 interface states is analyzed when metal oxide semiconductor capacitors are stressed by Fowler Nordheim injection of electrons from the n type substrate. The capture cross sections of the energy distribution of the states are measured by a trap filling method using deep level transient spectroscopy. We found that the capture cross sections of near midgap states increase by a factor 10, while they remain unchanged for the states localized near the conduction band edge. The capture cross sections are temperature dependent and their associated activation energies increase with the stress from 30 to 100 meV. The exponential prefactor in the temperature dependence law of the capture cross section is increased from 10 16 to 10 14 cm2 and we suggest that the Fowler Nordheim degradation induces new interface states of donor type in the upper part of the silicon band gap.
author_names: Dominique Vuillaume

Rachid Bouchakour

M Jourdain

Jacques C Bourgoin
title: Capture cross section of Si SiO2 interface states generated during electron injection
year: 1989

abstract: A modified transient capacitance technique is introduced which is capable of characterizing continuously distributed semiconductor/insulator interface states. Using this technique, Si/SiO2 interface states located in the upper half of the Si bandgap have been studied in n type MOS structures. In agreement with previous reports, it was found that the interface state density continuously increase towards the conduction band edge. The interface state density close to mid gap was about 1010 eV 1 cm 2. For the first time, it was experimentally shown that the electron capture cross section, sn, of the interface states located in the upper half of the bandgap is thermally activated, i.e. described by the formula sn so exp( DE/kT) where so?3x10 17 cm2 is independent of temperature and the energy location of the interface states. The observed decrease of the activation energy DE(10 40 meV in the energy range 0.3 0.1 eV below the conduction band) The observed interface states are shown to be indentical with th.
author_names: Emil Kamieniecki

N S Gomma

Agnieszka Kloc

Ryszard Nitecki
title: Transient capacitance spectroscopy of semiconductor/insulator interface states: Thermally activated capture cross section of Si/SiO2 interface states
year: 1981

abstract: The capture cross section of interface states induced by Fowler Nordheim tunneling electron injection in (100) n and p Si metal/oxide/semiconductor (MOS) capacitors has been measured as a function of interface state density by means of the ac conductance method. In n Si MOS capacitors two interface states are generated in the upper half of the Si gap, while in p Si MOS capacitors only one interface state is observed in the lower half of the gap. The capture cross section for electrons (upper half of the gap) and for holes (lower half of the gap) tends to decrease when the interface state densities exceed about 1.5x1011 cm 2eV 1. This behavior is explained by taking the occurrence of additional tunneling to defect states in the oxide into account. Moreover, the difference in the slopes of the descending characteristics of electron and hole capture cross sections is used to estimate the effective mass ratio of an electron and a hole in the SiO2 gap.
author_names: Masataka Inoue

Akihiro Shimada

Junji Shirafuji
title: Capture Cross Section of Electric Stress Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
year: 1996

abstract: The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated diode method and the subthreshold measurement. The density of interface trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross section are obtained in this work. Among the interfacial properties, the surface state capture cross section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross section of surface states is about 2.4 x 10 15 cm2, which may be an inherent nature in the HfO2/Si interface.
author_names: Fu-Chien Chiu
title: Surface State Capture Cross Section at the Interface between Silicon and Hafnium Oxide
year: 2013

abstract: Abstract The capacitance and conductance of a metal nitride oxide semiconductor (MNOS) capacitor was measured as a function of voltage at various frequencies between 10 Hz and 200 kHz using a "lock in" amplifier. The capacitance as a function of voltage was also measured at a frequency of 1 MHz as well as under quasi static conditions. All the measurements were made at a temperature of 298degK. The high frequency C V measurements were used to establish the relation between the surface potential and gate voltage. The experimental data was analysed in terms of the theoretical models of Lehovec and of Deuling et al. to determine the energy density distribution of the interface states. The interface states density calculated from the quasi static capacitance measurements agreed with those obtained from the low frequency capacitance results analysed in terms of Lehovec's model. However, in the energy range between 0.5 and 0.9 eV, the vlaues of the interface states energy density calculated from fitting the conductance data to the model of Deuling et al. differ from those obtained by the other two methods by as much as a factor of two due to the high density of interface states in the MNOS device. The analysis of conductance data also furnished the values of electron capture cross section which decreases approximately exponentially with interface states energy, varying from 10 13 cm 2 at 0.4 eV to 10 19 cm 2 at 0.86 eV.
author_names: A Singh

J G Simmons
title: Determination of energy density distribution and capture cross section of interface states in the metal nitride oxide semiconductor (MNOS) structure
year: 1982

abstract: We employed a high temperature conductance method to investigate the interface state properties of the Al2O3/B doped diamond MOS structure by considering the surface potential fluctuation. Based on Gaussian approximation of Nicollian's model and Brew's graphical approach, we analyzed the frequency dependent characteristics of parallel conductance (Gp/o f) at various gate voltages and extracted the energy distribution of interface state density (Dit) capture cross section (sp) time constant (tit) and the standard deviation of surface potential fluctuation (ss) The Dit extracted by the conductance method exhibited good agreement with that by the high low method, whereas there exist large errors when surface potential fluctuation was not considered by using the conductance method. The capture cross section extracted by the conductance method was on the order of 10 17 cm2. From the energy dependence of the interface state time constant, the hole capture and emission follow the Shockley Read Hall statistics. ss decreases with the energy position away from the valence band edge (Ev) of diamond, indicating that donor like traps are distributed in the Ev side of diamond.
author_names: Xufang Zhang

Tsubasa Matsumoto

Ukyo Sakurai

Toshiharu Makino

Masahiko Ogura

Mitsuru Sometani

Satoshi Yamasaki

Christoph E Nebel

Takao Inokuma

Norio Tokuda
title: Insight into Al2O3/B doped diamond interface states with high temperature conductance method
year: 2020

abstract: Au/graphene oxide (GO) doped PrBaCoO nanoceramic/n Si capacitors were fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz at room temperature. Experimental results showed that the capacitance (C) and conductance (G/w) values are strong functions of frequency and applied bias voltage. C V plot revealed two distinctive peaks at low frequencies which are located at about 0 and 2 V, such that the first peak disappears towards high frequencies. The energy density distribution profile of the interface/surface states (Dit/Nss) and their relaxation time (t) and capture cross section (sp) of the sample were obtained by using the admittance method. In addition, the voltage dependent profile of Nss and resistance were obtained by using low high frequency capacitance and Nicollian Brews method, respectively, and they also reveal two distinctive peaks, respectively. Two peaks' behavior in the forward bias C V, Nss V and Ri V plots confirmed the existence of two different localized regions of Nss between Si and interfacial layer. The series resistance (Rs) of the device decreased with increasing frequency from 175 O at 1 kHz to 72 O at 1 MHz. As a result, the mean value of Dit was found about 5 x 1013 eV 1 cm 2 which is reasonable for an electronic device.
author_names: Selcuk Demirezen

Ahmet Kaya

Semsettin Altindal

I Uslu
title: The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO doped PrBaCoO nanoceramic/n Si capacitors at room temperature
venue: Polymer Bulletin
year: 2017