Search query: external cavity semiconductor laser

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abstract: Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory scale lasers with extraordinarily high stability and low noise have been reported, all integrated chip scale devices with sub 100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip scale semiconductor laser featuring 30 Hz integral linewidth as well as sub Hz instantaneous linewidth.
author_names: Wei Liang

Vladimir Ilchenko

Danny Eliyahu

Anatoliy Savchenkov

Andrey B Matsko

David Seidel

Lute Maleki
title: Ultralow noise miniature external cavity semiconductor laser
venue: Nature communications
year: 2015

abstract: Abstract In this article, the window based complexity and output modulation of a time delayed chaotic semiconductor laser (SL) model has been investigated. The window based optical complexity (OC) is measured by introducing the recurrence sample entropy (SampEn) The analysis has been done without and in the presence of external noise. The significant changes in the dynamics can be observed under induced noise with weak strength. It has also been found that there is a strong positive correlation between the output power and the complexity of the system with various sets of parameters. The laser intensity, as well as the OC can be increased with the incremental noise strength and the associated system parameters. Thus, optical complexity quantifies the system dynamics and its instabilities, since is strongly correlated with the laser outputs. This analysis can be applied to measure the laser instabilities and modulation of output power.
author_names: Lamberto Rondoni

Muhammad Rezal Kamel Ariffin

Renuganth Varatharajoo

Sayan Mukherjee

Sanjay Kumar Palit

Santo Banerjee
title: Optical complexity in external cavity semiconductor laser
year: 2017

abstract: Abstract A commercially available high power GaN based blue laser diode has been operated in a simple Littrow type external cavity (EC) Two kinds of EC configurations with the grating lines perpendicular (A configuration) and parallel (B configuration) to the p n junction are evaluated. Good performance has been demonstrated for the EC laser with B configuration due to the better mode selection effect induced by the narrow feedback wavelength range from the grating. Under an injection current of 1100 mA, the spectral linewidth is narrowed significantly down to ~0.1 nm from ~1 nm (the free running width) with a good wavelength locking behavior and a higher than 35 dB amplified spontaneous emission suppression ratio. Moreover, a tuning bandwidth of 3.6 nm from 443.9 nm to 447.5 nm is realized with output power of 1.24 W and EC coupling efficiency of 80% at the central wavelength. The grating coupled blue EC laser with narrow spectral linewidth, flexible wavelength tunability, and high output power shows potential applications in atom cooling and trapping, high resolution spectroscopy, second harmonic generation, and high capacity holographic data storage.
author_names: Ding Ding

Xueqin Lv

Xinyi Chen

Fei Wang

Jiangyong Zhang

Kaijun Che
title: Tunable high power blue external cavity semiconductor laser
year: 2017

abstract: We report a continuous wave highly coherent and tunable dual frequency laser emitting at two frequencies separated by 30 GHz to 3 THz, based on compact III V diode pumped quantum well surface emitting semiconductor laser technology. The concept is based on the stable simultaneous operation of two Laguerre Gauss transverse modes in a single axis short cavity, using an integrated sub wavelength thick metallic mask. Simultaneous operation is demonstrated theoretically and experimentally by recording intensity noises and beat frequency, and time resolved optical spectra. We demonstrated a >80 mW output power, diffraction limited beam, narrow linewidth of <300 kHz, linear polarization state >45 dB) and low intensity noise class A dynamics of <0.3% rms, thus opening the path to a compact low cost coherent GHz to THz source development.
author_names: Romain Paquet

Stephane Blin

Mikhael Myara

Luc le Gratiet

Mohamed Sellahi

Baptiste Chomet

Gregoire Beaudoin

Isabelle Sagnes

Arnaud Garnache
title: Coherent continuous wave dual frequency high Q external cavity semiconductor laser for GHz THz applications.
venue: Optics letters
year: 2016

abstract: This Letter is the first to report experimental bifurcation diagrams of an external cavity semiconductor laser (ECSL) in the low to moderate current injection regime and long cavity case. Based on the bifurcation cascade behavior which was unveiled by Hohl and Gavrielides [Phys. Rev. Lett. 82, 1148 1151 (1999) we present a detailed experimental investigation of the nonlinear dynamics of ECSLs and of the robustness of the cascade to changes in the current and cavity length. Also, we report for the first time a well resolved experimental Hopf bifurcation in an ECSL. Based on the Lang and Kobayashi model, we identify the dynamical regimes and the instabilities involved in the cascade, as well as the influence of the current and cavity length on the cascade.
author_names: Byungchil Kim

Nianqiang Li

Alexandre Locquet

David S Citrin
title: Experimental bifurcation cascade diagram of an external cavity semiconductor laser.
venue: Optics express
year: 2014

abstract: We experimentally investigate the timing jitter (TJ) of a passively mode locked external cavity diode laser. Variation of the gain current and the absorber reverse bias voltage allows transitions from fundamental mode locking up to seventh harmonic mode locking. Hereby, a reduction of the TJ as a function of the harmonic mode locking order is found. Furthermore, the application of optical feedback results in an additional reduction of TJ for almost the whole investigated operation range. In particular, the reduction increases with harmonic mode locking order. The highest observed reduction of TJ amounts to a factor of 10 as compared with the free running case which corresponds to a repetition rate linewidth reduction by a factor of 100.
author_names: Simon Rauch

Lukas Drzewietzki

Andreas Klehr

Joachim Sacher

Wolfgang Elsassar

Stefan Breuer
title: Experimental Study of the Timing Jitter of a Passively Mode Locked External Cavity Semiconductor Laser Subject to Repetition Rate Transitions and Optical Feedback
venue: IEEE Journal of Quantum Electronics
year: 2015

abstract: A simple design of a hybrid integrated short external cavity chaotic semiconductor laser module is presented and fabricated. A distributed feedback laser chip is directed to the transflective mirror through a collimating micro lens, and a part of the light is reflected by the mirror into the laser chip to induce chaos. Transmitted through the mirror, the generated chaotic light is coupled into a pigtail fiber as output by a focusing micro lens. It should be pointed out that the part between the transflective mirror and the emitting surface of the chip works as a short external straight feedback cavity. All the components above together with chip submount, heat sink, and thermoelectric cooler are encapsulated by a commercial 14 pin butterfly package. In our experimental fabrication, the intensity reflectivity of the transflective mirror is optimized as 5% and the external cavity length is 2 mm. Experimental tests show that chaotic light with a bandwidth larger than 4.5 GHz is readily obtained from the chaotic laser module by adjusting laser bias current.
author_names: Mingjiang Zhang

Yuhang Xu

Tong Zhao

Yanan Niu

Tianshuang Lv

Yu Liu

Zhike Zhang

Jianzhong Zhang

Yi Liu

Yuncai Wang

Anbang Wang
title: A Hybrid Integrated Short External Cavity Chaotic Semiconductor Laser
venue: IEEE Photonics Technology Letters
year: 2017

abstract: Abstract In this paper, at first the stability of the dynamics of semiconductor laser is analyzed through the Lyapunov exponent spectra, bifurcation diagrams and time series of electric field intensity. The analysis is performed with respect to applied feedback phase C p and feedback strength e of the laser. Then the dynamical chaos control method introduced by Behnia and Akhshani (2009) [26] is used for controlling dynamical behavior of an External Cavity Semiconductor Laser (ECSL) A great virtue of this method is its flexibility. Also, unlike other chaos control techniques, in this method not need to know more than one variable. In this paper, by considering a chaotic dynamical system as a pump current source, the ECSL is stabilized properly. Furthermore, the proposed method is used to design a simple circuit as a controller.
author_names: Sohrab Behnia

Saeid Afrang

Afshin Akhshani

Khosro Mabhouti
title: A novel method for controlling chaos in external cavity semiconductor laser
year: 2013

abstract: We study the symbolic dynamics of a stochastic excitable optical system with periodic forcing. Specifically, we consider a directly modulated semiconductor laser with optical feedback in the low frequency fluctuations (LFF) regime. We use a method of symbolic time series analysis that allows us to uncover serial correlations in the sequence of intensity dropouts. By transforming the sequence of inter dropout intervals into a sequence of symbolic patterns and analyzing the statistics of the patterns, we unveil correlations among several consecutive dropouts and we identify clear changes in the dynamics as the modulation amplitude increases. To confirm the robustness of the observations, the experiments were performed using two lasers under different feedback conditions. Simulations of the Lang Kobayashi (LK) model, including spontaneous emission noise, are found to be in good agreement with the observations, providing an interpretation of the correlations present in the dropout sequence as due to the interplay of the underlying attractor topology, the external forcing, and the noise that sustains the dropout events.
author_names: Andres Aragoneses

T Sorrentino

Sandro Perrone

Daniel J Gauthier

M C Torrent

Cristina Masoller
title: Experimental and numerical study of the symbolic dynamics of a modulated external cavity semiconductor laser.
venue: Optics express
year: 2014

abstract: We describe the dual frequency and dual polarization emission of a diode pumped vertical external cavity semiconductor laser at 852 nm dedicated to the coherent population trapping of cesium atoms. The output power reaches ~20 mW on each frequency, with a frequency difference in the gigahertz range.
author_names: Fabiola A Camargo

Jessica Barrientos

Ghaya Baili

Loic Morvan

Daniel Dolfi

David Holleville

Stephane Guerandel

Isabelle Sagnes

Patrick M Georges

Gaelle Lucas-Leclin
title: Coherent Dual Frequency Emission of a Vertical External Cavity Semiconductor Laser at the Cesium \rm D}_{2} Line
venue: IEEE Photonics Technology Letters
year: 2012