Search query: Long-wavelength silicon photonic integrated circuits

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abstract: In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon on insulator waveguide circuits up to 3.8 mm wavelength are demonstrated as well as germanium on silicon waveguide circuits operating in the 5 5 mm wavelength range. The heterogeneous integration of III V semiconductors and IV VI semiconductors on this platform is described for the integration of lasers and photodetectors operating in the 2 3 mm wavelength range. GeSn is proposed as an appealing approach to monolithically integrated long wavelength detectors. Finally, nonlinear optics in silicon waveguide circuits beyond the two photon absorption threshold is explored.
author_names: Gunther Roelkens

Utsav D Dave

Alban Gassenq

Nannicha Hattasan

C Hu

Bart Kuyken

Francois Leo

Aditya Malik

Muhammad Muneeb

Eva Ryckeboer

Dorian Sanchez

Sarah Uvin

R Wang

Zeger Hens

Roel Baets

Yosuke Shimura

Federica Gencarelli

Benjamin Vincent

Roger Loo

Joris Van Campenhout

Laurent Cerutti

J B Rodriguez

Eric Tournie

Xu-lin Chen

Milos S Nedeljkovic

Goran Z Mashanovich

L Longfei Shen

Noel Healy

Anna C Peacock

Xiaoping Liu

Richard M Osgood

William M J Green
title: Long wavelength silicon photonic integrated circuits
venue: 11th International Conference on Group IV Photonics (GFP)
year: 2014

abstract: An efficient integration scheme for a vertical cavity surface emission laser (VCSEL) on a silicon photonic circuit is introduced. A grating coupler fabricated on a tilted silicon membrane is used to couple the vertical emission of the VCSEL to the in plane silicon waveguide with a high coupling efficiency and a low reflection back to the laser. Single mode and single polarization VCSELs at 1310nm wavelength band are flip chip bonded on the silicon photonic chip. A coupling efficiency of 5.8dB is measured at the laser wavelength and a high optical power of 0.66mW is coupled to the silicon waveguide. Data transmission up to 10Gb/s with direct current modulation is realized using the integrated VCSEL. All the structures in the present coupling scheme are massively producible, and the hybrid integration of VCSELs relies on a standard high accuracy flip chip process with passive alignment.
author_names: Ziliang Ruan

Yuntao Zhu

Pengxin Chen

Yaocheng Shi

Sailing He

Xinlun Cai

Liu Liu
title: Efficient Hybrid Integration of Long Wavelength VCSELs on Silicon Photonic Circuits
venue: Journal of Lightwave Technology
year: 2020

abstract: We review our work on SWIR and MWIR photonic integrated circuits for spectroscopic sensing systems.
author_names: Gunther Roelkens

Bart Kuyken

Francois Leo

Nannicha Hattasan

Eva Ryckeboer

Muhammad Muneeb

Chen Hu

Aditya Malik

Zeger Hens

Roel Baets

Yosuke Shimura

Federica Gencarelli

Benjamin Vincent

Roger Loo

Peter Verheyen

Guy Lepage

Joris Van Campenhout

Laurent Cerutti

J B Rodriguez

Eric Tournie

Xia Chen

Milos S Nedeljkovic

Goran Z Mashanovich

Xiaoping Liu

Richard M Osgood

William M J Green
title: Long wavelength III V/silicon photonic integrated circuits
year: 2013

abstract: The atmospheric transmission window and the fingerprint region of many substances overlaps with the long wave infrared band. This has enabled the emergence of a new path for photonic integrated circuits, which could exploit the potential applications of this wavelength range, including chemical and bio sensing. In this work we review our latest advances in the suspended silicon platform with subwavelength grating lateral cladding at 7.7 mm wavelength. Suspended waveguides only require one lithographic etch step and can be specifically designed to maximize sensitivity when used as sensors. Waveguides with propagation loss of 3.1+ 0.3 dB/cm are demonstrated, as well as bends with less than 0.1 dB/bend. Suspended waveguides based on shifted Bragg grating lateral cladding are also reported, with propagation loss of 5.1+ 0.6 dB/cm. These results prepare the ground for the development of a platform capable of covering the entire mid infrared band.
author_names: Alejandro Sanchez-Postigo

J Gonzalo Wanguemert-Perez

Jordi Soler Penades

Alejandro Ortega-Monux

Milos S Nedeljkovic

Robert Halir

Faysal El Mokhtari Mimum

Zhibo Qu

Ali Z Khokhar

Ahmed Osman

Wei Cao

Callum George Littlejohns

Goran Z Mashanovich

Pavel Cheben

Inigo Molina-Fernandez
title: Suspended Silicon Integrated Platform for the Long Wavelength Mid Infrared Band
venue: 2019 21st International Conference on Transparent Optical Networks (ICTON)
year: 2019

abstract: In this talk, we review the technical merits of silicon photonic devices and integrated circuits, which have benefited from high index contrast silicon waveguides, a high integration level of various optical functions on the same chips, and mature complementary metal oxide semiconductor (CMOS) fabrication techniques. These technical merits assure silicon photonics as a disruptive optical technology that will achieve low cost and compact optical modules for data communications, with applications such as chip scale optical interconnects, short reach communications in datacenters and supercomputers, and metro/long haul optical transmissions. In particular, we review silicon photonic circuits for wavelength division multiplexing (WDM) transmitters, WDM receivers, coherent optical transmitters and coherent receivers, photonic networks on chip, and silicon photonic light sources.
author_names: Po Dong
title: Silicon photonic integrated circuits
year: 2016

abstract: The optimization of grating couplers is usually realized by multiple simulations using specific computational software for this task. Many grating parameters must be analyzed and designed to get the maximum coupling efficiency and the transmission spectrum centred at the wavelength of operation. However, these simulations may take a long time and consume high computational resources depending on the simulation resolution. This work is focused on finding a method to optimize the grating parameters with the lowest number of simulations. In this way, closed form expressions are presented to get the optimal values for the period and fill factor, which are the main parameters in the grating design. The usefulness of the proposed approach is shown for the design of silicon grating couplers operating at 1.31 um and 1.55 um and both TE and TM polarizations.
author_names: Roberto Larrea

Ana M Gutierrez

Pablo Sanchis
title: Design method for high performance grating couplers in photonic integrated circuits
year: 2018

abstract: We report an electrically pumped hybrid cavity AlGaInAs silicon long wavelength VCSEL using a high contrast grating (HCG) reflector on a silicon on insulator (SOI) substrate. The VCSEL operates at silicon transparent wavelengths ~1.57 mm with >1 mW CW power outcoupled from the semiconductor DBR, and single mode operation up to 65 degC. The thermal resistance of our device is measured to be 1.46 K/mW. We demonstrate >2.5 GHz 3 dB direct modulation bandwidth, and show error free transmission over 2.5 km single mode fiber under 5 Gb/s direct modulation. We show a theoretical design of SOI HCG serving both as a VCSEL reflector as well as waveguide coupler for an in plane SOI waveguide, facilitating integration of VCSEL with in plane silicon photonic circuits. The novel HCG VCSEL design, which employs scalable flip chip eutectic bonding, may enable low cost light sources for integrated optical links.
author_names: James Ferrara

Weijian Yang

Li Zhu

Pengfei Qiao

Connie J Chang-Hasnain
title: Heterogeneously integrated long wavelength VCSEL using silicon high contrast grating on an SOI substrate.
venue: Optics express
year: 2015

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author_names: C David Wright

Harish Bhaskaran

Wolfram H P Pernice
title: Integrated phase change photonic devices and systems
venue: MRS Bulletin
year: 2019

abstract: Most of the research on silicon on insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 mm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 mm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 mm up to 2.55 mm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 mm [1] Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon based synchronously pumped optical parametric oscillator (OPO) is constructed [3] This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 mm to the telecommunication band with efficiencies up to +19.5 dB [4] One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid IR to the telecom window after which they can be detected by a high sensitivity telecom band optical receiver.
author_names: Bart Kuyken
title: Nonlinear optics in silicon wire waveguides: towards integrated long wavelength light sources
year: 2011

abstract: We review recent advances in heterogeneous silicon photonic integration technology and components and describe progress in silicon photonic integrated circuits. Techniques for laser integration and the impact of active silicon photonic integrated circuits could have on interconnects, telecommunications and silicon electronics are reviewed. A variety of materials are being heterogeneously integrated, including arsenides for short wavelength lasers, phosphides for infrared lasers, QCLs for long wavelengths, LiNbO3 and GaAs for nonlinear applications and YIG for isolators and circulators.
author_names: John E Bowers
title: Heterogeneous Photonic Integration on Silicon
venue: 2018 European Conference on Optical Communication (ECOC)
year: 2018