Search query: Review of Displacement Damage Effects in Silicon Devices

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abstract: This paper provides a historical review of the literature on the effects of radiation induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement damage information sources is also provided.
author_names: J R Srour

Cheryl J Marshall

Paul W Marshall
title: Review of displacement damage effects in silicon devices
year: 2003

abstract: In this paper, we review the radiation damage issues caused by displacement damage in silicon sensors operating in the harsh radiation environments of high energy physics experiments. The origin and parameterization of the changes in the macroscopic electrical sensor properties such as depletion voltage, leakage current, and charge collection efficiency as a function of fluence of different particles, annealing time, and annealing temperature are reviewed. The impact of impurities in the silicon base crystal on these changes is discussed, revealing their effects on the degradation of the sensor properties. Differences on how segmented and nonsegmented devices are affected and how device engineering can improve radiation hardness are explained and characterization techniques used to study sensor performance and the electric field distribution inside the irradiated devices are outlined. Finally, recent developments in radiation hardening and simulation techniques using technology computer aided design modeling are given. This paper concludes with radiation damage issues in presently operating experiments and gives an outlook of radiation hardened technologies to be used in the future upgrades of the Large Hadron Collider and beyond.
author_names: Michael Moll
title: Displacement Damage in Silicon Detectors for High Energy Physics
venue: IEEE Transactions on Nuclear Science
year: 2018

abstract: A review of radiation induced displacement damage effects in semiconductor devices is presented, with emphasis placed on silicon technology. The history of displacement damage studies is summarized, and damage production mechanisms are discussed. Properties of defect clusters and isolated defects are addressed. Displacement damage effects in materials and devices are considered, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells. Additional topics examined include NIEL scaling, carrier concentration changes, random telegraph signals, radiation hardness assurance, and simulation methods for displacement damage. Areas needing further study are noted.
author_names: J R Srour

James W Palko
title: Displacement Damage Effects in Irradiated Semiconductor Devices
venue: IEEE Transactions on Nuclear Science
year: 2013

abstract: High energy radiation produces defect complexes in semiconductor materials which reduce minority carrier lifetime, change majority carrier density, and reduce mobility. Most of the experimental data on semiconductors and semiconductor devices has been taken using high energy neutrons. Recent research has shown that this data can be extrapolated to other high energy radiation such as protons, electrons, alpha particles and gamma rays by normalizing to the energy going into atomic processes. Minority carrier lifetime is the most sensitive electronic property of silicon in the neutron environment. The degradation of minority carrier lifetime results in changes in semiconductor device properties such as current gain, storage time, saturation voltage and sink current. Carrier removal is the next most important characteristic of displacement damage and it causes a decrease in carrier mobility and an increase in resistivity. The dependence of these basic semiconductor properties on neutron fluence is introduced into device models such as SPICE and the resulting radiation inclusive model permits quantitative determination of device parameters as a function of neutron fluence.<ETX>
author_names: George C Messenger
title: A summary review of displacement damage from high energy radiation in semiconductors and semiconductor devices
venue: RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems
year: 1991

abstract: This review concerns radiation effects in silicon Charge Coupled Devices (CCDs) and CMOS active pixel sensors (APSs) both of which are used as imagers in the visible region. Permanent effects, due to total ionizing dose and displacement damage, are discussed in detail, with a particular emphasis on the space environment. In addition, transient effects are briefly summarized. Implications for ground testing, effects mitigation and device hardening are also considered. The review is illustrated with results from recent ground testing.
author_names: Gordon R Hopkinson

A Mohammadzadeh
title: RADIATION EFFECTS IN CHARGE COUPLED DEVICE (CCD) IMAGERS AND CMOS ACTIVE PIXEL SENSORS
year: 2004

abstract: The dependence of displacement damage effects in silicon charge coupled devices on the bias conditions during proton irradiation has been assessed. The devices have been fully characterized for dark signal increase, charge transfer degradation and the generation of random telegraph signals. A 5 to 10% higher degradation rate for all these parameters has been seen when unbiased during irradiation, under conditions typically used for a proton irradiation campaign, compared with the case when operating the devices during the irradiation. Room temperature annealing has been investigated and shows a bias dependence for all parameters tested. A reverse annealing behavior of bulk dark signal and random telegraph signals following illumination is reported for the first time. Both the annealing and reverse annealing observations may, in part, be attributed to the behavior of the trivacancy.
author_names: Mark Stanford Robbins

Luis Gomez Rojas
title: An Assessment of the Bias Dependence of Displacement Damage Effects and Annealing in Silicon Charge Coupled Devices
venue: IEEE Transactions on Nuclear Science
year: 2013

abstract: We report on a study of the sensitivity of silicon MEMS to proton radiation and mitigation strategies. MEMS can degrade due to ionizing radiation (electron hole pair creation) and non ionizing radiation (displacement damage) such as electrons, trapped and solar protons, or cosmic rays, typically found in a space environment. Over the past few years there has been several reports on the effects of ionizing radiation in silicon MEMS, with failure generally linked to trapped charge in dielectrics. However there is near complete lack of studies on displacement damage effects in silicon MEMS: how does silicon change mechanically due to proton irradiation? We report on an investigation on the susceptibility of 50 mm thick SOI based MEMS resonators to displacement damages due to proton beams, with energies from 1 to 60 MeV, and annealing of this damage. We measure ppm changes on the Young's modulus and Poisson ratio by means of accurately monitoring the resonant frequency of devices in vacuum using a Laser Doppler Vibrometer. We observed for the first time an increase (up to 0.05% of the Young's modulus of single crystal silicon electromagnetically actuated micromirrors after exposure to low energy protons (1 4 MeV) at high absorbed doses 100 Mrad (Si) This investigation will contribute to a better understanding of the susceptibility of silicon based MEMS to displacement damages frequently encountered in a space radiation environment, and allow appropriated design margin and shielding to be implemented.
author_names: Joao Gomes

Herbert R Shea
title: Displacement damage effects in silicon MEMS at high proton doses
venue: MOEMS MEMS
year: 2011

abstract: The concept of non ionizing energy loss (NIEL) has been demonstrated to be a successful approach to describe the displacement damage effects in silicon materials and devices. However, some discrepancies exist in the literature between experimental damage factors and theoretical NIELs. 60Co gamma rays having a low NIEL are an interesting particle source that can be used to validate the NIEL scaling approach. This paper presents different 60Co gamma ray NIEL values for silicon targets. They are compared with the radiation induced increase in the thermal generation rate of carriers per unit fluence. The differences between the different models, including one using molecular dynamics, are discussed.
author_names: Elsayed E Allam

Christophe Inguimbert

Andrew Meulenberg

Anouar Jorio

I Zorkani
title: Gamma non ionizing energy loss: Comparison with the damage factor in silicon devices
year: 2018

abstract: With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high tolerance to total ionizing dose (TID) However, it is not well understood how CBRAM behaves in an energetic ion environment where displacement damage (DD) effects may also be an issue. In this paper, the response of CBRAM to 100 keV Li, 1 MeV Ta, and 200 keV Si ion irradiations is examined. Ion bombardment was performed with increasing fluence steps until the CBRAM devices failed to hold their programed state. The TID and DD dose (DDD) at the fluence of failure were calculated and compared against tested ion species. Results indicate that failures are more highly correlated with TID than DDD. DC cycling tests were performed during 100 keV Li irradiations and evidence was found that the mobile Ag ion supply diminished with increasing fluence. The cycling results, in addition to prior 14 MeV neutron work, suggest that DD may play a role in the eventual failure of a CBRAM device in a combined radiation environment.
author_names: Jennifer Taggart

Robin B Jacobs-Gedrim

Michael Mclain

Hugh J Barnaby

Edward S Bielejec

W Hardy

Matthew J Marinella

Michael N Kozicki

Keith E Holbert
title: Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects
venue: IEEE Transactions on Nuclear Science
year: 2019

abstract: The total ionizing dose effects in silicon based semiconductor devices (SDs) and integrated circuits (ICs) under conditions of low dose rate irradiation typical of space applications are surveyed. The mechanism of radiation induced charge buildup in the dielectric of MOS structures and at the semiconductor/dielectric interface is considered. In addition, the nature of defects in the Si/SiO2 structure responsible for these processes is analyzed. The specific features of annealing the charge trapped in a dielectric during irradiation and also of interface traps (surface states, SSs) are shown. The peculiarities of the degradation of MOS and bipolar devices are considered for low dose rate irradiation conditions typical of space applications. It is shown that under low dose rate irradiation, MOS devices are prone to time dependent effects which are determined by the kinetics of charge buildup and annealing in the Si/SiO2 structure, whereas bipolar devices may be susceptible to true dose rate effects. The main experimental methods of modeling low dose rate effects during accelerated tests of silicon devices and integrated circuits are surveyed. The necessity of using fundamentally different experimental approaches in modeling the time dependent effects in MOS devices and the true dose rate effects in bipolar devices and integrated circuits is demonstrated.
author_names: Konstantin I Tapero
title: Low Dose Rate Effects in Silicon Based Devices and Integrated Circuits: A Review
year: 2018