Search query: Hybrid External Cavity Laser with a 160-nm Tuning Range

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abstract: We present a hybrid laser by using an InP reflective semiconductor optical amplifier chip butt coupled with a SiN tunable reflector chip. The laser wavelength tuning range is 160 nm and the linewidth is 30 kHz.
author_names: Yuyao Guo

Linjie Zhou

Gangqiang Zhou

Ruiling Zhao

Liangjun Lu

Jianping Chen
title: Hybrid External Cavity Laser with a 160 nm Tuning Range
venue: 2020 Conference on Lasers and Electro Optics (CLEO)
year: 2020

abstract: We demonstrate a III V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C band on a silicon on insulator platform. A III V semiconductor gain chip is hybridized into the silicon chip by edge coupling the silicon chip through a Si3N4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high volume production. The laser has a largest output power of 11 mW with a maximum wall plug efficiency of 4.2% tunability of 60 nm (more than covering the C band) and a side mode suppression ratio of 55 dB >46 dB across the C band) The lowest measured linewidth is 37 kHz <80 kHz across the C band) which is the narrowest linewidth using a silicon based external cavity. In addition, we successfully demonstrate all silicon photonics based transmission of 34 Gbaud (272 Gb/s) dual polarization 16 QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro ring based tunable laser.
author_names: Hang Guan

Ari Novack

Tal Galfsky

Yangjin Ma

Saeed Fathololoumi

Alexandre Horth

Tam N Huynh

Jose Roman

Ruizhi Shi

Michael Caverley

Yang Liu

Tom Baehr-Jones

Keren Bergman

Michael Hochberg
title: Widely tunable, narrow linewidth III V/silicon hybrid external cavity laser for coherent communication.
venue: Optics express
year: 2018

abstract: An InGaAsP 1.5 mm laser, with one facet antireflection coated, has been incorporated into a diffraction grating external cavity. The lasing wavelength could be tuned over a 55 nm range about the centre wavelength of 1.5 mm by rotating the grating. Furthermore, it was found that the emission spectrum was extremely narrow; beat frequency measurements at 1523 nm against an HeNe laser showed it to be of the order of 10 kHz.
author_names: R Wyatt

W J Devlin
title: 10 kHz linewidth 1.5 mm InGaAsP external cavity laser with 55 nm tuning range
year: 1983

abstract: We demonstrate two novel hybrid lasers with the same III V ultrawideband gain medium. An hybrid III V/Si laser and its III V/SiO2 counterpart exhibit high fiber coupled output power without booster semiconductor optical amplifier (up to +13 dBm for III V/Si and +10 dBm for III V/SiO2) and a record tuning range (respectively, 95 nm and 66 nm) over the C and L bands with side mode suppression ratio greater than 35 dB.
author_names: Agnes Verdier

Guilhem de Valicourt

Romain Brenot

Helene Debregeas

Po Dong

Mark P Earnshaw

Helene Carrere

Young-Kai Chen
title: Ultrawideband Wavelength Tunable Hybrid External Cavity Lasers
venue: Journal of Lightwave Technology
year: 2018

abstract: Summary from only given. InGaAsP InP strained multiquantum well structures similar to those described ins were used for tilted ridge waveguide (TRWG) gain chip fabrication. Lateral mode confinement is provided by a dual channel ridge waveguide structure prepared by conventional photolithography in conjunction with chemical etching.
author_names: I V Kudryashov

A Komissarav

N Morris

Mikhail A Maiorov

John C Connolly

Dmitri Z Garbuzov

Viktor Khalfin

A M Braun

G A Alphonse
title: 100 mW external cavity laser with a 1405 1575 nm tuning range
venue: CLEO 2002
year: 2002

abstract: We demonstrate a novel hybrid Ill V/Si laser, which exhibits high fiber coupled output power without booster SOA (up to +13 dBm at certain wavelengths) and a record tuning range (95nm) over the C and L band with side mode suppression ratio greater than 35 dB.
author_names: Guilhem de Valicourt

Agnes Verdier

Romain Brenot

Y -K Chen

Po Dong
title: Integrated ultra wide band wavelength tunable hybrid external cavity silicon based laser
venue: 2017 Optical Fiber Communications Conference and Exhibition (OFC)
year: 2017

abstract: A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal oxide semiconductor (CMOS) compatible Si on insulator (SOI) platform and experimental results with high output power are demonstrated. A III V semiconductor gain chip is edge coupled into a SOI cavity chip through a SiN(x) spot size converter and Si grating couplers are incorporated to enable wafer scale characterization. The laser output power reaches 20 mW and the highest wall plug efficiency of 7.8% is measured at 17.3 mW in un cooled condition. The laser wavelength tuning ranges are 8 nm for the single ring reflector cavity and 35 nm for the vernier ring reflector cavity, respectively. The Si hybrid laser is a promising light source for energy efficient Si CMOS photonic links.
author_names: Jin Hyoung Lee

Ivan Shubin

Jin Yao

Justin Robert Bickford

Ying Luo

Shiyun Lin

Stevan S Djordjevic

Hiren D Thacker

John E Cunningham

Kannan Raj

Xuezhe Zheng

Ashok V Krishnamoorthy
title: High power and widely tunable Si hybrid external cavity laser for power efficient Si photonics WDM links.
venue: Optics express
year: 2014

abstract: A Si/III V hybrid laser has been a highly sought after device for energy efficient and cost effective high speed silicon photonics communication. We present a high wall plug efficiency external cavity hybrid laser created by integrating an independently optimized SOI ring reflector and a III V gain chip. In our demonstration, the uncooled integrated laser achieved a waveguide coupled wall plug efficiency of 12.2% at room temperature with an optical output power of ~10 mW. The laser operated single mode near 1550 nm with a linewidth of 0.22 pm. This is a tunable light source with 8 nm wavelength tuning range. A proof of concept laser wavelength stabilization technique has also been demonstrated. Using a simple feedback loop, we achieved mode hop free operation in a packaged external cavity hybrid laser as bias current was varied by 60mA.
author_names: Jin-Hyoung Lee

J T Bovington

Ivan Shubin

Ying Luo

Jin Yao

Shiyun Lin

John E Cunningham

Kannan Raj

Ashok V Krishnamoorthy

Xuezhe Zheng
title: Demonstration of 12.2% wall plug efficiency in uncooled single mode external cavity tunable Si/III V hybrid laser.
venue: Optics express
year: 2015

abstract: Combining a semiconductor optical amplifier with a long and low loss external laser cavity made of dielectric integrated circuits has the advantage of obtaining extremely narrow laser linewidths. However, extending the cavity length also reduces the cavity mode spacing, and this spectral interval forms the fundamental limit for wavelength tuning without perturbing mode hops. The InP Si3N4 hybrid integrated laser we consider here has a mode spacing of 5 GHz. The external cavity consists of a phase section and a wavelength tunable filter, which is formed by two microring resonators. Via the phase section alone, mode hop free tuning was measured to be limited to 5 GHz as expected. We demonstrate that this range can be significantly extended, here to over 28 GHz, by tuning the phase section simultaneously and properly with the microring resonators. The results indicate that both a narrow linewidth and a broad mode hop free tuning range can be achieved with a chip based laser.
author_names: Albert van Rees

Edwin Jan Klein

Dimitri Geskus

Youwen Fan

Klaus J Boller
title: Mode hop free tuning of a chip based InP Si3N4 hybrid laser
year: 2019

abstract: We present an integrated semiconductor dielectric hybrid dual frequency laser operating in the 1.5 \mu$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long, low loss silicon nitride (Si$_3$N$_4$ feedback circuit to extend the cavity photon lifetime, resulting in a cavity optical roundtrip length of about 30 cm on a chip. Simultaneous lasing at two frequencies is enabled by introducing an external control parameter for balancing the feedback from two tunable, frequency selective Vernier mirrors on the Si$_3$N$_4$ chip. Each frequency can be tuned with a wavelength coverage of about 80 nm, potentially allowing for the generation of a broad range of frequencies in the microwave range up to the THz range.
author_names: Jesse Mak

Albert van Rees

Rob E M Lammerink

Dimitri Geskus

Youwen Fan

Peter J M van der Slot

Chris G H Roeloffzen

Klaus J Boller
title: High spectral purity microwave generation using a dual frequency hybrid integrated semiconductor dielectric waveguide laser
venue: OSA Continuum
year: 2021