Search query: high voltage power devices

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abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide bandgap semiconductor suitable for high voltage and low loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.
author_names: Tsunenobu Kimoto
title: Material science and device physics in SiC technology for high voltage power devices
year: 2015

abstract: This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have been analyzed. Theoretical calculations show that besides diamond and SiC, compounds like AlN, GaN, InN, and ZnO, and the intermetallics (Ga/sub x/In/sub 1 x/N, Al/sub x/In/sub 1 x/N, Al/sub x/Ga/sub 1 x/N, and (AlN)/sub x/(SiC)/sub 1 x/ offer several orders of magnitude improvement in the on resistance and in the potential for successful operation at higher temperatures.
author_names: T Paul Chow

Ritu Tyagi
title: Wide bandgap compound semiconductors for superior high voltage unipolar power devices
year: 1994

abstract: Gallium oxide (Ga2O3) is a strong contender for power electronic devices. The material possesses excellent properties such as a large bandgap of 4.7 4.9 eV for a high breakdown field of 8 MV cm 1. Low cost, high volume production of large single crystal b Ga2O3 substrates can be realized by melt growth methods commonly adopted in the industry. High quality n type Ga2O3 epitaxial thin films with controllable carrier densities were obtained by ozone molecular beam epitaxy (MBE) We fabricated Ga2O3 metal semiconductor field effect transistors (MESFETs) and Schottky barrier diodes (SBDs) from single crystal Ga2O3 substrates and MBE grown epitaxial wafers. The MESFETs delivered excellent device performance including an off state breakdown voltage (Vbr) of over 250 V, a low leakage current of only few mA mm 1, and a high drain current on/off ratio of about four orders of magnitude. The SBDs also showed good characteristics such as near unity ideality factors and high reverse Vbr. These results indicate that Ga2O3 can potentially meet or even exceed the performance of Si and typical widegap semiconductors such as SiC or GaN for ultrahigh voltage power switching applications.
author_names: Masataka Higashiwaki

Kohei Sasaki

Akito Kuramata

Takekazu Masui

Shigenobu Yamakoshi
title: Development of gallium oxide power devices
year: 2014

abstract: Lead halide perovskite semiconductors have recently gained wide interest following their successful embodiment in solid state photovoltaic devices with impressive power conversion efficiencies, while offering a relatively simple and low cost processability. Although the primary optoelectronic properties of these materials have already met the requirement for high efficiency optoelectronic technologies, industrial scale up requires more robust processing methods, as well as solvents that are less toxic than the ones that have been commonly used so successfully on the lab scale. Here we report a fast, room temperature synthesis of inks based on CsPbBr3 perovskite nanocrystals using short, low boiling point ligands and environmentally friendly solvents. Requiring no lengthy post synthesis treatments, the inks are directly used to fabricate films of high optoelectronic quality, exhibiting photoluminescence quantum yields higher than 30% and an amplified spontaneous emission threshold as low as 1.5 mJ cm 2. Finally, we demonstrate the fabrication of perovskite nanocrystal based solar cells, with open circuit voltages as high as 1.5 V. Despite their impressive performance, more efforts are required to develop industrially scalable perovskite solar cells from less toxic solvents. Towards that aim, this study presents the use of colloidal nanoparticle inks for room temperature fabrication of CsPbBr3 solar cells.
author_names: Quinten A Akkerman

Marina Gandini

Francesco Di Stasio

Prachi Rastogi

Francisco Palazon

Giovanni Bertoni

James M Ball

Mirko Prato

Annamaria Petrozza

Liberato Manna
title: Strongly emissive perovskite nanocrystal inks for high voltage solar cells
year: 2017

abstract: The high voltage gain converter is widely employed in many industry applications, such as photovoltaic systems, fuel cell systems, electric vehicles, and high intensity discharge lamps. This paper presents a novel single switch high step up nonisolated dc dc converter integrating coupled inductor with extended voltage doubler cell and diode capacitor techniques. The proposed converter achieves extremely large voltage conversion ratio with appropriate duty cycle and reduction of voltage stress on the power devices. Moreover, the energy stored in leakage inductance of coupled inductor is efficiently recycled to the output, and the voltage doubler cell also operates as a regenerative clamping circuit, alleviating the problem of potential resonance between the leakage inductance and the junction capacitor of output diode. These characteristics make it possible to design a compact circuit with high static gain and high efficiency for industry applications. In addition, the unexpected high pulsed input current in the converter with coupled inductor is decreased. The operating principles and the steady state analyses of the proposed converter are discussed in detail. Finally, a prototype circuit is implemented in the laboratory to verify the performance of the proposed converter.
author_names: Xuefeng Hu

Chunying Gong
title: A High Voltage Gain DC DC Converter Integrating Coupled Inductor and Diode Capacitor Techniques
venue: IEEE Transactions on Power Electronics
year: 2014

abstract: Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs) To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed.
author_names: Tetsu Kachi
title: Recent progress of GaN power devices for automotive applications
year: 2014

abstract: The phenomenon of recombination induced stacking faults in high voltage p n diodes in SiC has been previously shown to increase the forward voltage drop due to reduction of minority carrier lifetime. In this paper, it has been shown that, for the first time, this effect is equally important in unipolar devices such as high voltage MOSFETs. If the internal body diode is allowed to be forward biased during the operation of these devices, then the recombination induced SFs will reduce the majority carrier conduction current and increase the leakage current in blocking mode. The effect is more noticeable in high voltage devices where the drift layer is thick and is not expected to impact 600 1200 V devices.
author_names: Anant K Agarwal

H Fatima

Sarah K Haney

Sei-hyung Ryu
title: A New Degradation Mechanism in High Voltage SiC Power MOSFETs
venue: IEEE Electron Device Letters
year: 2007

abstract: Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s. It is the only concept known today that has challenged and ultimately proved wrong the well known theoretical study on the limit of silicon in high voltage devices. This paper deals with the history, device and process development, and the future prospects of Superjunction technologies. It covers fundamental physics, technological challenges as well as aspects of design and modeling of unipolar devices, such as CoolMOS. The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide bandgap materials) to derive its set of benefits and limitations. This paper closes with the application of the superjunction concept to other structures or materials, such as terminations, superjunction IGBTs, or silicon carbide Field Effect Transistors (FETs)
author_names: Florin Udrea

Gerald Deboy

T Fujihira
title: Superjunction Power Devices, History, Development, and Future Prospects
venue: IEEE Transactions on Electron Devices
year: 2017

abstract: Despite significant development recently, improving the power conversion efficiency of organic photovoltaics (OPVs) is still an ongoing challenge to overcome. One of the prerequisites to achieving this goal is to enable efficient charge separation and small voltage losses at the same time. In this work, a facile synthetic strategy is reported, where optoelectronic properties are delicately tuned by the introduction of electron deficient core based fused structure into non fullerene acceptors. Both devices exhibited a low voltage loss of 0.57 V and high short circuit current density of 22.0 mA cm 2, resulting in high power conversion efficiencies of over 13.4% These unconventional electron deficient core based non fullerene acceptors with near infrared absorption lead to low non radiative recombination losses in the resulting organic photovoltaics, contributing to a certified high power conversion efficiency of 12.6%.Improving the power conversion efficiency is the main target of the organic solar cell research. Here Yuan et al. develop unconventional electron deficient core based non fullerene acceptors to achieve both low voltage loss and high current density, leading to a certified high efficiency of 12.6%
author_names: Jun Yuan

Tianyi Huang

Pei Cheng

Yingping Zou

Huotian Zhang

Jonathan Lee Yang

Sheng-Yung Chang

Zhenzhen Zhang

Wenchao Huang

Rui Wang

Dong Meng

Feng Gao

Yang Yang
title: Enabling low voltage losses and high photocurrent in fullerene free organic photovoltaics
venue: Nature Communications
year: 2019

abstract: A generalized optimal pulsewidth modulation (PWM) technique applicable to multilevel inverters for low switching frequency control of medium voltage high power industrial ac drives is presented. Proposed synchronous optimal PWM method allows setting the maximum switching frequency to a low value without compromising the harmonic distortion of machine currents. Low switching frequency reduces the switching losses of the power semiconductor devices, resulting in higher inverter power output and efficiency. The proposed optimization results in low harmonic distortion at low switching frequency. Experimental results of a five level inverter drive using optimal PWM are presented.
author_names: Akshay Kumar Rathore

Joachim Holtz

Till Boller
title: Generalized Optimal Pulsewidth Modulation of Multilevel Inverters for Low Switching Frequency Control of Medium Voltage High Power Industrial AC Drives
venue: IEEE Transactions on Industrial Electronics
year: 2013