Search query: threshold voltage implant transconductance mosfet nmos

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abstract: Abstract Two dimensional (2D) analytical threshold voltage model for Linearly Graded Binary Metal Alloy (LGBMA) gate electrode with Dielectric Pocket (DP) Metal Oxide Semiconductor (MOSFET) has been developed by solving 2 D Poisson's equation using evanescent mode analysis technique. In this proposed model, first time the idea of work function engineering is incorporated for DP MOSFET to bring an improvement over different short channel effects (SCEs) In present paper, the expressions for surface potential and threshold voltage are derived along with drain current, transconductance and drain conductance. Moreover, this model also predicts the variations of different SCEs like threshold voltage roll off, Drain induced Barrier Lowering (DIBL) and sub threshold swing along the channel length correctly. All analytical results are verified by ATLAS 2D simulator.
author_names: Priyanka Saha

Subir Kumar Sarkar
title: Threshold Voltage Modelling of Linearly Graded Binary Metal Alloy Gate Electrode with DP MOSFET
year: 2020

abstract: This paper presents the effect of Gamma Irradiated on threshold voltage, surface mobility and transconductance on N channel MOSFET devices at a gate oxide thickness of 15 nanometers, which is fabricated at Thai Microelectronics Center by 0.8 micron CMOS technology. Then gamma irradiation (Co 60) at a total dose varied from 1 to 10 \mathbf{kGy} By performing five rounds to observe changes in threshold voltage when the devices were exposed to gamma rays for measurement to extraction threshold Voltage (VTH) into the surface mobility (Uo) from IDSVs VGs curves in the saturation region. As a result, the threshold Voltage reduces at highest dose by approximately 38% compared with conventional N channel MOSFET, for a parameter extraction in the level 3 model for MOSFET SPICE parameters is presented.
author_names: Amonrat Kerdpradist

Anucha Ruangphanit

Wisut Titiroongruang

Rangson Muanghlua
title: The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
venue: 2018 International Electrical Engineering Congress (iEECON)
year: 2018

abstract: Threshold voltage is a fundamental parameter for MOSFET device and technology characterization. Multiple threshold voltage extraction methods are compared in this paper with experimental data over a wide temperature range from 40degC to 150degC for 5V and 1.8V NMOS devices in a 180 nm BCD process. Consistent results are found among two linear extrapolation methods from the drain current versus gate voltage transfer characteristics and transition method for MOSFETs biased in the linear region. The difference in temperature coefficients of extracted threshold voltages from different methods are compared and the different trends of scaled drain currents at extracted threshold voltages over temperature are analyzed to reveal the underestimation of threshold voltage temperature coefficients in gm/Id methods.
author_names: Yu-Hsing Cheng
title: Comparison of MOSFET Threshold Voltage Extraction Methods with Temperature Variation
venue: 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)
year: 2019

abstract: The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers' requirements.
author_names: Milaim Zabeli

Nebi Caka

Myzafere Limani

Qamil Kabashi
title: Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode
year: 2017

abstract: The aim of this paper is to show the influence of the threshold voltage and transconductance parameters that characterize the NMOS transistors on the behavior of NMOS inverters in static and switching conditions of operation, as well as set directive that should be followed during the design phase of NMOS inverters that enable designers to design NMOS inverters with the best possible performance, depending on operation conditions. Designing the NMOS inverters with controlled parameters that characterize NMOS transistors in NMOS inverters also enables designers to design the logic circuits based in NMOS inverters (NMOS logic) with the best possible performance, according to the operation conditions and designers' requirements.
author_names: Milaim Zabeli

Nebi Caka

Myzafere Limani
title: Role of the threshold voltage and transconductance parameters of NMOS transistors in NMOS inverter performance for static and switching conditions of operation
year: 2014

abstract: This work presents low voltage high performance design of Fully Balanced Operational Transconductance Amplifier (FBOTA) using Dynamic Threshold Metal Oxide Semiconductor (DTMOS) transistor with adaptive biasing. The primary stage of fully differential OTA and active loads are implemented using DTMOS transistors and simple area efficient NMOS adaptive biasing circuit is used at the reference side of the biasing current mirror to provide higher slew rate with less power dissipation. The proposed circuit operates at 0.5V power supply and offers an average slew rate of 156 V/yS with 0.105mW power dissipation. It provides 83.6 dB dc gain and 39.18 MHz gain bandwidth along with phase margin of 64deg. Its performance has been verified by using Mentor Graphics Eldospice simulation tool with TSMC 0.18 ym CMOS technology.
author_names: Mihika Mahendra

Shweta Kumari

Maneesha Gupta
title: Low Voltage High Performance Fully Balanced Operational Transconductance Amplifier with Improved Slew Rate
venue: 2020 7th International Conference on Signal Processing and Integrated Networks (SPIN)
year: 2020

abstract: This paper presents a study of the effect of the gate voltage dependent mobility on the threshold voltage extraction in long channel MOSFETs by the transconductance change method and recently proposed transconductance to current ratio change method, using analytical modeling and experimental data obtained on advanced silicon on insulator (SOI) FinFETs and ultrathin body SOI MOSFETs with ultrathin high gate dielectrics. It is shown that, at vanishingly small drain voltage and constant mobility, both methods yield the same values, coinciding with the position of the maximum of the second derivative of the inversion carrier density in respect to the gate voltage. However, such is not the case anymore when considering gate voltage dependence of mobility around threshold. Analytical expressions for the errors in the values obtained by both methods due to mobility variation around threshold are obtained. Based on analytical modeling and experimental data, it is demonstrated that, for the same mobility variation, the resulting error on the extraction caused by the gate voltage dependent mobility is much smaller for the transconductance to current ratio change method than for the transconductance change method.
author_names: Tamara Rudenko

Valeriya Kilchytska

Mohd Khairuddin Md Arshad

J P Raskin

Alexei Nazarov

Denis Flandre
title: On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance to Current Ratio Change Methods: Part I Effect of Gate Voltage Dependent Mobility
venue: IEEE Transactions on Electron Devices
year: 2011

abstract: In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long channel MOSFETs by the transconductance change and transconductance to current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different behaviors with respect to the drain voltage effect. In particular, the transconductance change method yields a threshold voltage value, which regularly increases with drain voltage, and interpretation, as well as analytical expression for this dependence, is provided. In contrast, for the transconductance to current ratio change method, the increase of the extracted threshold voltage value with drain voltage is smaller and rapidly saturates; hence, the threshold voltage extraction is more stable and reliable. Modeling derivations are found to be in excellent agreement with measurements on long channel UTB SOI MOSFETs as well as 2 D simulations.
author_names: Tamara Rudenko

Valeriya Kilchytska

Mohd Khairuddin Md Arshad

J P Raskin

Alexei Nazarov

Denis Flandre
title: On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance to Current Ratio Change Methods: Part II Effect of Drain Voltage
venue: IEEE Transactions on Electron Devices
year: 2011

abstract: In this paper, a comparative analysis of nanoscaled triple metal gate (TMG) recessed source/drain (Re S/D) fully depleted silicon on insulator (FD SOI) MOSFET has been presented for the design of the pseudo NMOS inverter in the nanometer regime. For this, firstly, an analytical modeling of threshold voltage has been proposed in order to investigate the short channel immunity of the studied device and also verified against simulation results. In this structure, the novel concept of backchannel inversion has been utilized for the study of device performance. The threshold voltage has been analyzed by varying the parameters of the device like the ratio of metal gate length and the recessed source/drain thickness for TMG Re S/D SOI MOSFET. Drain induced barrier lowering (DIBL) has also been explored in terms of recessed source/drain thickness and the metal gate length ratio to examine short channel effects (SCEs) For the exact estimation of results, the comparison of the existing multimetal gate structures with TMG Re S/D SOI MOSFET has also been taken under study in terms of electrostatic performance, i.e. threshold voltage, subthreshold slope, and on off current ratio. These structures are investigated with the TCAD numerical simulator from Silvaco ATLAS. Furthermore, for the first time, TMG Re S/D FD SOI MOSFET based pseudo NMOS inverter has been designed to observe the device performance at circuit levels. It has been found that the device offers high noise immunity with optimum switching characteristics, and the propagation delay of the studied circuit is recorded as 0.43 ps.
author_names: A Hari Priya

Nilesh Anand Srivastava

Ram Awadh Mishra
title: Design and Analysis of Nanoscaled Recessed S/D SOI MOSFET Based Pseudo NMOS Inverter for Low Power Electronics
venue: Journal of Nanotechnology
year: 2019

abstract: Abstract In this paper, using numerical simulations, analytical modeling and experimental data, we validate the applicability of the transconductance to current ratio (gm/ID) derivative (d(gm/ID)/dVG) method for extracting the threshold voltage (VTH) in junctionless (JL) MOSFETs and show its advantages over the commonly used transconductance derivative (or double derivative of drain current) method (dgm/dVGd2ID/dVG2) It is shown that, although both methods are based on the same theoretical VTH criterion, the d(gm/ID)/dVG method is more accurate than the d2ID/dVG2 method due to its lesser sensitivity to the gate voltage dependent mobility and series resistance parasitic effects, being particularly important in JL MOSFETs.
author_names: Tamara Rudenko

Alexei Nazarov

Sylvain Barraud

Valeria Kilchytska

Denis Flandre
title: A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance to current ratio
year: 2020