Search query: Basic semiconductors and pn junction theory

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abstract: Part I Semiconductor Material Properties Chapter 1: The Crystal Structure of Solids Chapter 2: Introduction to Quantum Mechanics Chapter 3: Introduction to the Quantum Theory of Solids Chapter 4: The Semiconductor in Equilibrium Chapter 5: Carrier Transport Phenomena Chapter 6: Nonequilibrium Excess Carriers in Semiconductors Part II Fundamental Semiconductor Devices Chapter 7: The pn Junction Chapter 8: The pn Junction Diode Chapter 9: Metal Semiconductor and Semiconductor Heterojunctions Chapter 10: Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor Chapter 11: Metal Oxide Semiconductor Field Effect Transistor: Additional Concepts Chapter 12: The Bipolar Transistor Chapter 13: The Junction Field Effect Transistor Part III Specialized Semiconductor Devices Chapter 14: Optical Devices Chapter 15: Semiconductor Microwave and Power Devices Appendix A: Selected List of Symbols Appendix B: System of Units, Conversion Factors, and General Constants Appendix C: The Periodic Table Appendix D: Unit of Energy The Electron Volt Appendix E: "Derivation" of Schrodinger's Wave Equation Appendix F: Effective Mass Concepts Appendix G: The Error Function Appendix H: Answers to Selected Problems
author_names: Donald A Neamen
title: Semiconductor physics and devices basic principles
year: 2012

abstract: We study electromechanical fields near the interface between a circular piezoelectric semiconductor cylinder and another piezoelectric semiconductor in which it is embedded. The cylinder is p doped. The surrounding material is n doped. The phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity and the conservation of charge for holes and electrons is used. The theory is linearized for small carrier concentration perturbations. An analytical solution is obtained, showing the formation of a PN junction near the interface. Various electromechanical fields associated with the junction are calculated. The effects of a few physical parameters are examined.
author_names: Yixun Luo

Ruo-ran Cheng

Chunli Zhang

Weiqiu Chen

Jiashi Yang
title: Electromechanical Fields Near a Circular PN Junction Between Two Piezoelectric Semiconductors
year: 2018

abstract: This chapter reviews some of the basics of semiconductor theory that are necessary for an understanding of the development of the device models which follows. Also reviewed is pn junction theory as its behavior is basic to the operation of transistors. The review is brief and covers only those topics which have direct relevance to MOS VLSI circuits. For more exhaustive treatments, the reader is referred to textbooks on the subject [1] [12]
author_names: Narain D Arora
title: Review of Basic Semiconductor and pn Junction Theory
year: 1993

abstract: A PN junction between two types of piezoelectric semiconductors (PSCs) is analyzed based on the fully coupled nonlinear equations of PSCs without any assumptions. A perturbation theory is employed to obtain the analytical solution of the considered nonlinear problem. A general solution to one dimensional problems for PSCs is represented by a sum of a series of perturbation solutions. Typical properties including the electromechanical fields, built in potential and the current voltage characteristics of the piezoelectric PN junction are investigated for conditions of mechanical loading combined with a bias. The results reveal that the simplified linear (i.e. first order perturbation) solution reported in the literature fails to describe the nonlinear characteristics, such as current voltage characteristics of the piezoelectric PN junction, although it can give the electromechanical fields as well as concentrations of the electrons and holes near the interface of the PN junction for small carrier concentration perturbations. The presented nonlinear solution is valid and corresponds closely with the numerical solutions based on the commercial software COMSOL.
author_names: MingKai Guo

Yuan Li

GuoShuai Qin

Minghao Zhao
title: Nonlinear solutions of PN junctions of piezoelectric semiconductors
venue: Acta Mechanica
year: 2019

abstract: In this chapter, we present basic device physics, general characteristics, and operation principles of a p n junction diode. A p n junction diode is referred to as a minority carrier device since its current conduction is controlled by the minority carrier diffusion process (i.e. electrons in the p region and holes in the n region)
author_names: Jitendra yogi

SurajBhan Singh

Vishal Verma

Deepak Kumar
title: Theory and Application of PN Junction Diode in Physics
year: 2017

abstract: At present, non equilibrium thermodynamics is an important theory and method for studying the phenomenon of small scales. In this work, by studying the temperature changes of PN junctions under different voltage conditions and doping concentrations, the micro scale semiconductor materials PN junctions in non equilibrium thermodynamics and thermal phenomena are researched. It is found that under the effect of lower voltage, the temperature of the PN junction will first decrease and then increase, and as the voltage increases, this phenomenon will gradually disappear. This shows that under certain voltage conditions, the phenomenon of unbalanced junction temperature of the PN junction exists, which will provide a huge impetus for the development of the reliability of solar cells, light emitting diodes, high frequency devices, sensors and measurement methods.
author_names: Chenshan Gao

Shao-Gang Wang

Chun-Jian Tan

Xu Liu

Quan Zhou

Huaiyu Ye
title: Thermal Non Equilibrium Analysis on PN junction
venue: 2020 21st International Conference on Electronic Packaging Technology (ICEPT)
year: 2020

abstract: We study the extension of a piezoelectric semiconductor (PS) fiber containing a PN junction, focusing on the effective polarization charges which are fundamental to piezotronics. A one dimensional model derived previously from the macroscopic theory of PSs is used for a linear theoretical and nonlinear numerical analysis by COMSOL. Both homogeneous and heterogeneous junctions are studied. In addition to the built in electric potential and field as well as I V curve, distributed effective polarization charge along the fiber and concentrated effective polarization charge on the junction interface are calculated and examined.
author_names: Ruo-ran Cheng

Chun-li Zhang

Wei-qiu Chen

Jia-shi Yang
title: On The Effective Polarization Charges In Theextension Of A Piezoelectric Semiconductor Fiber With A Pn Junction
venue: 2019 14th Symposium on Piezoelectrcity, Acoustic Waves and Device Applications (SPAWDA)
year: 2019

abstract: In this paper, we have systematically investigated the temperature gradient dependent electrical behaviours in a piezoelectric PN junction. A new iterative computational method is proposed by utilizing the 1 D nonlinear theories of thermo piezoelectric semiconductors. Coupling between the thermal gradient fields and polarization charges is discussed. It is found that the electromechanical field of a piezoelectric PN junction has a quick response to thermal gradient. Furthermore, gate voltage and carrier transport characteristics can be effectively tuned with thermal induced and piezoelectric charges. It is shown that a piezoelectric PN junction is highly sensitive to the temperature gradient, which may provide an alternative approach to manipulate the carrier transport in piezotronic devices.
author_names: MingKai Guo

Chunsheng Lu

GuoShuai Qin

M Zhao
title: Temperature Gradient Dominated Electrical Behaviours in a Piezoelectric PN Junction
venue: Journal of Electronic Materials
year: 2021

title: Universal Theory and Basic Rules of Strain Dependent Doping Behaviors in Semiconductors
year: 2021

abstract: Semiconductor pn junction is a two terminal device. It is the most fundamental device element that forms the basis of many electronic devices such as pn diodes, optoelectronic devices like light emitting diode and photodetector, field effect transistors and bipolar transistor. PN junction conducts high current in one direction and conduct very small amount of current in the reversed direction. Thus, pn junction has the property of rectification. PN junction is formed in a single crystal of semiconductor by making one end of the crystal p type by doping it with acceptor atom and making the other end n type by doping with donor atoms. The region where p type and n type meet is the junction. The equilibrium state is the state where the pn junction is left without any external stimulant such as electrical potential connected to it. This is also the state of zero bias voltage condition. When two semiconductor material type, p type and n type are brought to contact, majority carrier of each type would diffuse across the junction. This shall mean that the majority carrier hole from p type diffuses to n type material and the majority carrier of n type diffuses to p type material. The diffusion would stop after an electric field is built up sufficiently high to oppose diffusion. As the majority carrier such as hole diffuses across the junction, it combines with electron in the n type side, which creates a net positive charge. Likewise, the majority carrier electron from n type material diffuses across the junction recombines with hole in p type side creates net negative charge. The net charge at each side creates an electric field in the direction, which would oppose further diffusion. The electric field created would drift the minority carrier in the opposite direction across the junction. Thus when equilibrium attained, the drift carriers and diffused carriers should be balanced in termed of
title: Chapter 1 Semiconductor Pn Junction Theory and Applications _____________________________________________ 1.0 Introduction 1.1 Pn Junction at Equilibrium