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abstract: Abstract A super high dielectric constant AlOx/TiOy nanolaminate film is grown on hydrogenated diamond (H diamond) to enable superior metal oxide semiconductor (MOS) capacitors and MOS field effect transistors (MOSFETs) In order to minimize or suppress leakage current, a nanometer thick AlOx film is inserted at the AlOx/TiOy nanolaminate/H diamond interface. The maximum values for the capacitance density and dielectric constant related to the summation of individual AlOx and nanolaminate are 1.06 mF/cm2 and 68.7, respectively. Capacitance density and dielectric constant for the AlOx/TiOy nanolaminate are as high as 5.22 mF/cm2 and 308, respectively. Electrical properties of four H diamond MOSFETs with gate lengths increasing from 2.4 mm to 10.1 mm were investigated. All of them showed p type behavior and distinct pinch off characteristics with drain current maxima of 47.4, 43.3, 26.6, and 24.6 mA/mm, respectively. On/off ratios and threshold voltages for the MOSFETs are higher than 104 and lower than 0.55 0.10 V, respectively. The low threshold voltages indicate that the AlOx/TiOy nanolaminate gate based MOSFETs can switch between ON and OFF stages at low gate voltages. Effective mobilities of the H diamond channel layers for all the MOSFETs raised firstly and dropped subsequently with increasing voltages, which can be explained by the effect of mobility limiting factors.
author_names: Jiangwei Liu

Orlando Auciello

Elida de Obaldia

Bo Da

Yasuo Koide
title: Science and Technology of Integrated Super High Dielectric Constant AlOx/TiOy Nanolaminates Diamond for MOS Capacitors and MOSFETs
year: 2021

abstract: Abstract Synchrotron based m XRF, m XAS and m XRD have made a major impact in the field of environmental science in the last ten years. One of the first seven 'day one' beamlines on the Diamond Light Source is a microfocus spectroscopy beamline, beamline I18. Here the current status of the beamline and the opportunities it presents in the field of environmental science are described, with results from two of the first experiments also included. The first is based on the use of bonemeal to remediate soil. We used Zn K edge and Pb L3 edge spectroscopy to characterize the speciation of these two elements on a soil after bonemeal treatment. The results are compared with bulk measurements taken on the whole soil and standard materials. The second experiment described here is a study of the speciation and association of Ni in a laterite from Moa Bay, Cuba. Here the differences in the Ni speciation associated with Mn oxides are examined and compared with Fe oxides phases.
author_names: J Frederick W Mosselmans

Paul D Quinn

Josep Roque Rosell

Kirk D Atkinson

Andrew J Dent

S I Cavill

Mark E Hodson

Caroline Kirk

Paul F Schofield
title: The first environmental science experiments on the new microfocus spectroscopy beamline at Diamond
venue: Mineralogical Magazine
year: 2008

abstract: The electrical characteristics of metal semiconducting diamond (MS) metal insulating diamond semiconducting diamond (MiS) and metal oxide semiconducting diamond (MOS) structures on single crystal semiconducting diamond have been compared. Vertical structures were fabricated with the MS diode, MiS diode, and MOS capacitor on one face of the crystals and the ohmic contacts on the opposite face. Ohmic contacts, formed by ion implantation of B, exhibited reduced contact impedance. Current voltage and capacitance voltage characteristics of the three structures were measured. The MS and MiS diode structures exhibited large forward bias currents, whereas the insulating SiO2 limited the forward bias current through the MOSC structure. The MiS structure exhibited the lowest reverse bias leakage currents <10 pA/mm2) whereas the values for the MOSC and MS structures were 1 and 2 orders of magnitude larger, respectively. For all samples the uncompensated acceptor concentration of the semiconducting diamond was 1 2 X 1016 cm 3. These values were consistent with the secondary ion mass spectroscopy measurements of the B concentration in similar natural type IIb diamonds.
author_names: Michelle L Hartsell

Henry A Wynands

Bradley Alan Fox
title: Current voltage and capacitance voltage characterization of MS, MiS, and MOS structures on semiconducting diamond
venue: Photonics West Lasers and Applications in Science and Engineering
year: 1994

abstract: Peter Diamond is one of the major contributors to economics during the last half century. His many contributions include research on growth, Social Security, public finance more generally, the economics of uncertainty, search theory, in particular, and economic dynamics, in general. This work has shaped the way we think about many economic problems, and the way in which we formalize them. Among his long list of honors and awards, he is a fellow of the Econometric Society, a Guggenheim Fellow, a Fellow of the American Academy of Arts and Sciences, a Member of the National Academy of Sciences, and a Nemmers Prize winner. The National Science Foundation has supported his work for the last 40 years. A recent check indicated 9 books and 132 published articles, and there are few signs of any slowdown.
author_names: Giuseppe Moscarini

Randall Wright
title: AN INTERVIEW WITH PETER DIAMOND
venue: Macroeconomic Dynamics
year: 2007

abstract: Adding to the cross presentation family Immune responses to viral or tumor antigens are typically initiated by the process of cross presentation. Cross presentation is believed to be the major way that innate immune cells, such as the classical dendritic cell 1 (cDC1) subset, activate and prime immunological T cells. Theisen et al. used CRISPR based screening to identify regulators of cross presentation by cDC1s (see the Perspective by Barbet and Blander) One such regulator that was identified, WDFY4 (WD repeat and FYVE domain containing protein 4) was required for cross presentation of cell and bacterial associated antigens. WDFY4 played a critical role in cDC1 mediated viral and tumor immunity yet did not seem necessary for major histocompatibility complex class II presentation or for cross presentation by monocyte derived DCs. Science, this issue p. 694; see also p. 641 Dendritic cells require WDFY4 for cross presentation. During the process of cross presentation, viral or tumor derived antigens are presented to CD8+ T cells by Batf3 dependent CD8a+/XCR1+ classical dendritic cells (cDC1s) We designed a functional CRISPR screen for previously unknown regulators of cross presentation, and identified the BEACH domain containing protein WDFY4 as essential for cross presentation of cell associated antigens by cDC1s in mice. However, WDFY4 was not required for major histocompatibility complex class II presentation, nor for cross presentation by monocyte derived dendritic cells. In contrast to Batf3 mice, Wdfy4 mice displayed normal lymphoid and nonlymphoid cDC1 populations that produce interleukin 12 and protect against Toxoplasma gondii infection. However, similar to Batf3 mice, Wdfy4 mice failed to prime virus specific CD8+ T cells in vivo or induce tumor rejection, revealing a critical role for cross presentation in antiviral and antitumor immunity.
author_names: Derek J Theisen

Jesse T Davidson

Carlos G Briseno

Marco Gargaro

Elvin J Lauron

Qiuling Wang

Pritesh Desai

Vivek Durai

Prachi Bagadia

Joshua R Brickner

Wandy L Beatty

Herbert W Virgin

William E Gillanders

Nima Mosammaparast

Michael Steven Diamond

L David Sibley

Wayne M Yokoyama

Robert D Schreiber

Theresa L Murphy

Kenneth M Murphy
title: WDFY4 is required for cross presentation in response to viral and tumor antigens
venue: Science
year: 2018

abstract: Abstract The paper reviews publications, primarily of the Institute of Machinery Science of the Russian Academy of Sciences. The techniques of investigations and the results are briefly outlined as to how various high melting point materials withstand friction in vacuum and in gaseous atmospheres (within a wide temperature range) in like or unlike combinations, such as metals, metal like compounds, oxides, graphite materials and molybdenum disulphide. The results of measurements of adhesion, including that between diamond and various metals, are given. The friction drop of graphite material on corundum ceramics caused abnormally by tribochemical interaction, is described. The 'eutectic wear' accompanied by a sharp friction reduction is based on an investigation of the phenomenon of eutectic melting of diamond and graphite with experimental validation. The results of studies of vacuum ion plasma deposited CrO and MoS 2 coatings are demonstrated and a technique is suggested as to how to make the friction of MoS 2 very low.
author_names: Aleksandr P Semenov
title: Tribology at high temperatures
year: 1995

abstract: Abstract The interface properties of Al2O3/hydrogen terminated diamond (H diamond) metal oxide semiconductor (MOS) structures both with and without NO2 p type doping were studied by measuring the capacitance voltage (C V) and conductance frequency (G f) characteristics to investigate the effect of NO2 p type doping at the Al2O3/H diamond interface. The interface state density was studied by measuring the conductance as a function of frequency and applied voltage. Interface state density (Dit) values are for NO2 p doped MOS structure varied from ~5.7 x 1012 cm 2 eV 1 at 0.27 eV above the valence band maximum (VBM) to 1.75 x 1012 cm 2 eV 1 at 0.36 eV above VBM. Conversely, MOS structure without NO2 p type doping exhibits a Dit value of approximately 4.2 x 1012 cm 2 eV 1 within an energy range of 0.27 to 0.39 eV. In addition, border trap density in the Al2O3 layer near the interface is also discussed.
author_names: Niloy Chandra Saha

Makoto Kasu
title: Heterointerface properties of diamond MOS structures studied using capacitance voltage and conductance frequency measurements
year: 2019

abstract: Abstract By using Au as the gate metal contact, performance of NO2 doped H diamond field effect transistor (FET) has been improved. We fabricated and compared Al2O3 layer deposited, NO2 doped H diamond FETs with Au, Al and Ti gate metals, respectively. Among them, FET with Au gate metal showed the highest drain current of 61.76 mA/mm, where drain current of FET with Al and Ti gate metals were respectively 42.89 and 39.97 mA/mm. Further, NO2 doped metal oxide semiconductor (MOS) structures are fabricated and capacitance voltage measurements were performed to evaluate the effect of the metal work function and surface barrier height. This phenomenon has been explained in terms of surface barrier height of the Al2O3 layer and metal. Finally, band diagrams of MOS structures are simulated and determined. Band diagrams at various gate voltages are discussed.
author_names: Niloy Chandra Saha

Makoto Kasu
title: Improvement of the Al2O3/NO2/H diamond MOS FET by using Au gate metal and its analysis
venue: Diamond and Related Materials
year: 2019

abstract: The electrical properties of Al2O3/p type diamond (111) MOS capacitors were studied with the goal of furthering diamond based semiconductor research. To confirm the formation of an inversion layer in the p type diamond body, an n type layer for use as a minority carrier injection layer was selectively deposited onto p type diamond. To form the diamond MOS capacitors, Al2O3 was deposited onto OH terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n type layer reached the inversion n channel diamond MOS field effect transistor (MOSFET) Using the high low frequency capacitance method, the interface state density, D it, within an energy range of 0.1 0.5 eV from the valence band edge energy, E v, was estimated at (4 9) x 1012 cm 2 eV 1. However, the high D it near E v remains an obstacle to improving the field effect mobility for the inversion p channel diamond MOSFET.
author_names: Tsubasa Matsumoto

H Kato

Toshiharu Makino

Masahiko Ogura

Daisuke Takeuchi

Satoshi Yamasaki

Masataka Imura

Akihiro Ueda

Takao Inokuma

Norio Tokuda
title: Direct observation of inversion capacitance in p type diamond MOS capacitors with an electron injection layer
year: 2018

abstract: This paper shows the effect of performing consecutive measurement prior to negative bias stress instability (NBSI) on diamond metal oxide semiconductor capacitor (MOSCAP) For the first time, time dependent stress tests have been carried out in order to investigate the stability of the flatband voltage <inline formula> <tex math notation="LaTeX"{V}_{\text {FB} /tex math>/inline formula> of MOSCAPs through capacitance voltage <italic>CV</italic> measurements. Two tests have been performed. In the first test, consecutive <italic>CV</italic> measurements with the device biased from deep depletion to the accumulation regime were performed to monitor the recovery of the <inline formula> <tex math notation="LaTeX"{V}_{\text {FB} /tex math>/inline formula> In the second test, NBSI technique has been applied. <inline formula> <tex math notation="LaTeX"{V}_{\text {FB} /tex math>/inline formula> stability has been measured by means of a time dependent bias stress in which the device was polarized at a fixed negative voltage for a specific time interval prior to performing the next <italic>CV</italic> measurement. As <inline formula> <tex math notation="LaTeX"{V}_{\text {FB} /tex math>/inline formula> is directly connected to the effective oxide charge <inline formula> <tex math notation="LaTeX"{N}_{\text {eff} /tex math>/inline formula> the two different tests allowed the extraction of total amount of <inline formula> <tex math notation="LaTeX"{N}_{\text {eff} /tex math>/inline formula> that interfered during the measurements. The result observed shows that the postoxidation annealing process induces a strong enhancement of the MOSCAP stability together with a decrease of <inline formula> <tex math notation="LaTeX"{N}_{\text {eff} /tex math>/inline formula>
author_names: O Loto

Matthieu Florentin

Cedric Masante

Nazareno Donato

Marie-Laure Hicks

Alexander C Pakpour-Tabrizi

Richard B Jackman

Verena Zuerbig

Phillippe Godignon

David Eon

Julien Pernot

Florin Udrea

Etienne Gheeraert
title: Gate Oxide Electrical Stability of p type Diamond MOS Capacitors
venue: IEEE Transactions on Electron Devices
year: 2018