Search query: Tungsten CMP slurry

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abstract: Abstract In this study, a response surface methodology (RSM) coupled with a face center cube design (FCD) was used to optimize the three principal components (i.e. Fe(NO3)3, H2O2, and SiO2 abrasives) in polishing slurries for a W barrier chemical mechanical planarization (CMP) process. The experimental ranges of the three components were 10 50 ppm of Fe(NO3)3, 0.3 0.9 wt% of H2O2, and 1 5 wt% of SiO2 abrasives. Based on the experimental data from the FCD, the second order models for the material removal rate (MRR) of the W and Oxide films were fitted; these were determined to be statistically valid and reliable. We have achieved the optimal conditions for the three components where the MRR is maximized and the selectivity between the W and Oxide MRRs is 1. The predicted MRR and selectivity at the optimal conditions were well correlated with the results of a confirmation run, which was conducted by using the W barrier CMP process with W patterned wafers. In addition, we employed a particular RSM called dual response optimization in order to investigate the tradeoff between the MRR and selectivity. Based on the tradeoff information, process engineers can conduct the optimization of the three components more flexibly.
author_names: Jihoon Seo

Joo Hyun Kim

Myoung-Jae Lee

Keungtae You

Jinok Moon

Dong-Hee Lee

Ungyu Paik
title: Multi objective optimization of tungsten CMP slurry for advanced semiconductor manufacturing using a response surface methodology
year: 2017

abstract: Chemical mechanical polishing (CMP) is one of the important steps that involves during fabrication of semiconductor devices. This research highlights the importance of tungsten (W) polishing slurries consisting of a novel nonionic, heat activated FeSi nanocatalyst on the performance of W chemical mechanical polishing. The results obtained from the polishing data showed a higher W removal rate of 5910 A/min with a slurry consisting of FeSi nanocatalyst at a polishing temperature of 80 degC. The increase in W polishing rate using FeSi slurry was explained on the basis of formation of a thicker oxide layer (WO3) due to the interaction between the W surface and hydroxyl radicals *OH) generated via the reaction between FeSi and hydrogen peroxide at 80 degC. Higher *OH generation and increase in oxygen depth profile of W film were confirmed by UV Vis spectrometer and AES analysis, respectively. Compared to Fe(NO3)3 catalyst, the slurry with FeSi showed a higher static etch rate at 80 degC. Potentiodynamic polarization results obtained using FeSi slurry showed thicker WO3 passivation layer as compared to the slurry with Fe(NO3)3. The increase in the polishing rate of W CMP using slurry with FeSi nanocatalyst can be essentially attributed to the generation of much stronger oxidant *OH due to its increased catalytic effect at a high polishing temperature of 80 degC.
author_names: Maneesh Kumar Poddar

Heon-Yul Ryu

Nagendra Prasad Yerriboina

Yeon-Ah Jeong

Jung-Hwan Lee

Tae-Gon Kim

Jae-Hyun Kim

Jongdeok Park

Min-Gun Lee

Chang-Yong Park

Seong-jun Han

Jae-Gon Choi

Jin-Goo Park
title: Nanocatalyst induced hydroxyl radical *OH) slurry for tungsten CMP for next generation semiconductor processing
venue: Journal of Materials Science
year: 2019

author_names: Eun-bin Seo

Hao Cui

Sangsu Yun

Jin-hyung Park

Jea-Gun Park
title: Research of New Concept Dishing Less Tungsten CMP Slurry Using Using 25 Nm Crystal Zirconium Dioxide Abrasive
year: 2014

author_names: Takao Funakoshi

Send Ojima

Kei Ishii

Toshiro Doi

Syuhei Kurokawa

Osamu Ohnishi
title: Basic studies on Tungsten CMP slurry recycle
year: 2011

title: SLURRY CONTAINING MULT OXDZER AND MIXED NANO ABRASIVES FOR TUNGSTEN CMP
year: 2017

abstract: The polishing performance and the relationships of electrochemistry depending upon oxidizers and additives in the tungsten CMP slurry used in semiconductor industry were investigated. Hydrogen peroxide, ferric nitrate and potassium iodate were used as oxidizers and they showed different oxidation reactions on tungsten film depending on the kind of oxidizers and pH of slurry. The differences influenced the polishing performance. Etching reaction was predominated in the hydrogen peroxide. However, passivation reaction was prevailed in ferric nitrate and potassium iodate. TMAH and KOH raised the potential energy and removal rate of tungsten, and improved a dispersion characteristic of slurry by increasing absolute value of zeta potential. Addition of 100 ppm of poly(acrylic acid) of M.W. 250,000 improved dispersion ability.
author_names: Jae seok Lee

Beom Suk Choi
title: Effect of oxidants and additives on the polishing performance in tungsten CMP slurry
year: 2006

abstract: The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.ma/~KZha
author_names: Sang-ho Lee

Young-Jae Kang

Jin-Goo Park

P Kwon

Chang-I Kim

Chan-Kwon Oh

Soo-Myoung Kim

Myung S Jhon

Se-An Hur

Youngjo Kim

Bong-Ho Kim
title: Dishing and Erosion Evaluations of Tungsten CMP Slurry in the Orbital Polishing System
year: 2006

abstract: In a typical production scale fab, CMP slurry will circulate through a bulk delivery system and fab piping approximately 100 times before being consumed. During these "turnovers" the slurry will encounter abuse from many sources, including decomposition of constituents. Change in any physical or chemical property during its lifetime, particularly hydrogen peroxide (H/sub 2/O/sub 2/ concentration, may affect polishing performance. In this paper, a commercially available CMP slurry used for tungsten polishing was subjected to an accelerated aging and handling evaluation to determine its handling characteristics in a bulk slurry distribution system used in semiconductor manufacturing. In this accelerated aging test, Cabot SemiSperse/sup R/ W 2000 was subjected to 3000 storage tank turnovers during a seven day test period while monitoring slurry health parameters, including pH, density, weight percent solids, and particle size distribution. During this period, the slurry showed minimal changes in all normal slurry health parameters. The H/sub 2/O/sub 2/ oxidizer did decompose as expected, but was readily replenished by following the manufacturer's recommendations of periodic assay analysis and dosing with replenishing H/sub 2/O/sub 2/ Cabot Semi Sperse/sup R/ W 2000 tungsten polishing slurry with H/sub 2/O/sub 2/ oxidizer should be compatible with bulk slurry delivery systems, especially those using vacuum pressure dispense engines.
author_names: John P Bare

Budge Johl
title: Evaluation of manufacturing handling characteristics of hydrogen peroxide based tungsten CMP slurry
venue: Twenty Third IEEE/CPMT International Electronics Manufacturing Technology Symposium (Cat. No.98CH36205)
year: 1998

abstract: The new CMP3200TM alumina slurry which meets the 110nm technology node for tungsten CMP on damascene and plug layers has been introduced. The testing has shown it is a very low cost, low defectivity alumina/Ferric Nitrate slurry.
author_names: L Chung
title: A Cost Effective, Low defect Tungsten CMP Slurry for Advanced Damascene and Plugs Processes
year: 2004

abstract: Tungsten contact chemical mechanical polishing is a critical process in advanced node semiconductor device manufacturing that enables metal interconnection. It is essential for device performance, and any defects caused by the tungsten CMP process have a direct effect on product yield. Among these defects, the highest yield killer is microscratches. Microscratches are a well studied CMP produced defect; however, this paper provides a new look at controlling microscratches in a manufacturing environment. Specifically, the bulk tungsten slurry is the cause for nearly all scratches at tungsten contact CMP. This paper studies the effects of abrasive size on defect performance and suggests causes for variation in size of slurry particles outside of manufacturing variability. While tungsten removal rate is not affected by abrasive size, the defectivity performance relies heavily on the ability to remove large particles from suspension. Current filtration solutions are not completely effective in preventing large particles from contacting the wafer, so the burden falls on preventing their formation. Factors such as age of material, storage temperature and agitation induced agglomeration will be studied to characterize the effects on particle size. Volume manufacturing data will be used to support the claims made in this paper.
author_names: Bryan Egan

Hong Jin Kim
title: Effect of Controlling Abrasive Size in Slurry for Tungsten Contact CMP Process
year: 2019