Search query: Chemical vapour transport and structural characterization of layered MnIn2Se4 single crystals

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abstract: Abstract Large single crystals of the semiconductor MnIn 2 Se 4 have been grown by the chemical vapour phase transport technique using AlCl 3 as transport agent. The plate like crystals had a size of up to 1 cm 2 Thermodynamic considerations revealed that Mn Al Cl complexes are important for the chemical vapour transport. It was found that MnIn 2 Se 4 has a rhombohedral unit cell belonging to the space group R3m with the lattice parameters of a 4.05(6) A and c 39.4(9) A at 300 K. The thermal expansion coefficients were investigated between 80 and 300 K. According to the crystal structure of ZnIn 2 S 4 a crystal structure model of MnIn 2 Se 4 was proposed, but the distribution of the cations Mn and In in the unit cell could not be completely determined.
author_names: Gerhard Doll

Martha Ch Lux-Steiner

Christian Kloc

Judith R Baumann

Ernst Bucher
title: Chemical vapour transport and structural characterization of layered MnIn2Se4 single crystals
year: 1990

abstract: Chemical and structural characterization has been performed for thick (100 600 mm) and thin (10 100 mm) 2H/4H inter polytype SnS2 crystals grown by low temperature chemical vapour transport in the reverse temperature gradient geometry. X ray diffraction shows that the 2H/4H SnS2 phase transforms to single crystal 2H SnS2 in 6 12 months. The S/Sn ratio is 2.02+ 0.01 in thick crystals and 2.01+ 0.01 in thin crystals. Thermogravimetric/differential thermal analysis and the other characterization techniques show no difference between the two types of crystal. Extremely small quantities of carbon and oxygen and some chlorine were detected by secondary ion mass spectroscopy and/or X ray photoelectron spectroscopy (XPS) These elements are concentrated at the surface. The XPS data show a chemical shift of tin and sulphur in the surface layer, which is probably caused by the adsorbed carbon and oxygen; however, it cannot be explained by the formation of the usual oxides of tin and sulphur.
author_names: Takashi Shibata

Yoshihisa Muranushi

Tomoyuki Miura

Tomiya Kishi
title: Chemical and structural characterization of SnS2 single crystals grown by low temperature chemical vapour transport
venue: Journal of Materials Science
year: 1991

abstract: Abstract In the present study, the single crystals of WSe1.93 were grown by chemical vapour transport (CVT) technique. Iodine was used as transporting agent. The purity and stoichiometry of the as grown WSe1.93 single crystals were determined by energy dispersive analysis of X ray (EDAX) The structural characterization was done by X ray diffraction (XRD) technique. The scanning electron microscopy (SEM) of the as grown single crystal surfaces showed that the crystal growth took place by layer growth mechanism. The thermogravimetric (TG) differential thermogravimetric (DTG) and differential thermal analysis (DTA) of as grown WSe1.93 single crystal in inert N2 atmosphere showed two stages decomposition. The thermal parameters like activation energy (Ea) Arrhenius constant (A) enthalpy change (DH) the entropy change (DS) and the free energy change (Gibbs function) (DG) were calculated using Kissinger method. The optical bandgaps were determined from the optical absorption spectrum. The d.c. electrical resistivity measurements in the temperature range of 303 483 K showed that the resistivity value decreases with increase of temperature, in line with semiconducting behavior. The p type semiconducting nature of the sample was confirmed by Hall effect and thermoelectric power (TEP) measurements. The obtained results are discussed in details.
author_names: Jiten P Tailor

Devangini S Trivedi

S H Chaki

Mahesh D Chaudhary

Milind P Deshpande
title: Study of chemical vapour transport (CVT) grown WSe1.93 single crystals
year: 2017

abstract: Single crystals of niobium sulphide (NbS2) having a layered structure were grown by chemical vapour transport technique (CVT) using iodine as transporting agent. The stoichiometry of the grown crystals was confirmed on the basis of energy dispersive analysis by X ray (EDAX) and the structural characterization was accomplished by Xray diffraction (XRD) studies. The crystals were found to possess hexagonal crystal structure. The lattice parameters, volume, particle size and X ray density was carried out for this crystal. The grown crystals were examined under optical zoom microscope for their surface topography study. Hall Effect measurements were carried out on grown crystals at room temperature. The positive value of Hall coefficient implies that this crystal is p type in nature. The results obtained are discussed in detail.
author_names: Mehul Dave

Kaushik Patel

Rajiv Vaidya
title: STRUCTURAL CHARACTERIZATIONS OF NBS2 SINGLE CRYSTALS
year: 2012

abstract: Abstract Single crystals of layer compounds with composition MoS x Se 2 x where x varies within the range 0 to 2, have been grown by the direct vapour transport technique to the maximum size of 15 mm x 10 mm x 0.3 mm. The series forms a complete range of isomorphous solid solutions, showing good agreement with Vegard's law. The composition of the above crystals was examined by ESCA (Electron Spectroscopy for Chemical Analysis) Crystal lattice parameters have been determined for the series with an X ray diffractometer.
author_names: M K Agarwal

Lakhichand Tulshiram Talele
title: Growth conditions and structural characterization of molybdenum sulphoselenide single crystals: (MoSxSe2 x, 0<=x<=2)
year: 1985

abstract: This paper represents the investigation on growth of single crystals of GeTe0.1Se0.9 using Chemical Vapour Transport (CVT) technique using Iodine as a transporting agent. Photographs of Energy Dispersive Analysis of Xray (EDAX) reveals that GeTe0.1Se0.9 single crystals are nearly stoichiometrically perfect. Structural confirmation of these crystals was accomplished by Xray diffraction and it shows that GeTe0.1Se0.9 has hexagonal closed packed crystal structure and lattice parameters have been calculated. The electron diffraction pattern/photograph confirms the single crystallinity of the grown crystal. A study of microstructures on this crystal has been made and its layered pattern is found. The characterization of optical band gap has been calculated at room temperature throughout the wavelength 200 2500 nm near the fundamental absorption edge. It shows that grown crystals have direct and indirect energy gaps of 1.08 eV and 0.8 eV respectively.
author_names: G K SOLANKIa

Dipika B PATELa

Sandip UNADKATb

N N GOSAIa

Ruchita R PATELa
title: SYNTHESIS OF GeTe 0 1 Se 0 9 SINGLE CRYSTALS AND ITS STRUCTURAL AND OPTICAL CHARACTERIZATION
year: 2010

abstract: This paper represents the investigation on growth of single crystals of GeTe0.1Se0.9 using Chemical Vapour Transport (CVT) technique using Iodine as a transporting agent. Photographs of Energy Dispersive Analysis of X ray (EDAX) reveals that GeTe0.1Se0.9 single crystals are nearly stoichiometrically perfect. Structural confirmation of these crystals was accomplished by X ray diffraction and it shows that GeTe0.1Se0.9 has hexagonal closed packed crystal structure and lattice parameters have been calculated. The electron diffraction pattern/photograph confirms the single crystallinity of the grown crystal. A study of microstructures on this crystal has been made and its layered pattern is found. The characterization of optical band gap has been calculated at room temperature throughout the wavelength 200 2500 nm near the fundamental absorption edge. It shows that grown crystals have direct and indirect energy gaps of 1.08 eV and 0.8 eV respectively.
author_names: G K Solanki

Dipika B Patel

Sandip Unadkat

Nitingiri N Gosai

Ruchita R Patel
title: SYNTHESIS OF GeTe0.1Se0.9 SINGLE CRYSTALS AND ITS STRUCTURAL AND OPTICAL CHARACTERIZATION
year: 2010

abstract: Single crystals of niobium sulphide (NbS 2 having a layered structure were grown by chemical vapour transport technique (CVT) using iodine as transporting agent. The chemical composition of as grown crystals have been confirmed on the basis of energy dispersive analysis by X ray. The structural analysis of as grown crystals have been accomplished by X ray diffraction (XRD) analysis. The lattice parameters obtained from the XRD analysis were a 3.33 A c =17.86 A. The X ray density was found to be 3.03 gm/cc and volume was calculated about 171.8 A 3 .This crystal is found to possess hexagonal, layered structure. The resistivity measurements of the grown crystals were carried out within the temperature range of temperature 300 K to 423 K. The crystals were found to exhibit semiconducting nature in this temperature range. The behavior of the resistance under pressure is thoroughly studied using Bridgman anvil set up upto 8 GPa. The nature of resistance found to be decreases with increasing pressure which indicate also semiconducting nature.
author_names: Mehul Dave

Kaushik Patel

Rajiv Vaidya
title: Growth, characterizations and highpressure studies of niobium sulphide single crystals
year: 2016

abstract: Transition metal trichalcogenides are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transition under pressure. In this paper authors reported the details about synthesis and characterization of zirconium sulphoselenide single crystals. The chemical vapour transport technique was used for the growth of zirconium sulphoselenide single crystals. The energy dispersive analysis by X ray (EDAX) gave the confirmation about the stoichiometry of the as grown crystals and other structural characterizations were accomplished by X ray diffraction (XRD) study. The variation of electrical resistance was monitored in a Bridgman opposed anvil set up up to 8 GPa pressure to identify the occurrence of any structural transition. These crystals do not possess any structural transitions upto the pressure limit examined.
author_names: Kaushik Patel

Rajiv Vaidya

Mehul Dave

S G Patel
title: Growth and high pressure studies of zirconium sulphoselenide single crystals
year: 2009

abstract: The zirconium triselenide (ZrSe 3 single crystal has been grown by chemical vapour transport technique using iodine as a transporting agent. The optimum condition for the growth of this crystal is given. The stoichiometry of the grown crystals was confirmed on the basis of energy disperse analysis by X ray (EDAX) and remaining structural characterization was accomplished by X ray diffraction (XRD) studies. The lattice parameters obtained from the XRD analysis were a= 5.45 A, b=3.74 A and c=9.44 A. This crystal is found to possess monoclinic, layered structure. The X ray density was found to be 5.63 g/cc and volume was calculated about 193.50 A3. The optical band gap of the as grown crystal has been carried out with the help of optical absorption spectra in the range 700 1400 nm.
author_names: Kaushik Patel

Rajiv Vaidya

S G Patel
title: Microstructural analysis of zirconium triselenide single crystals
year: 2007