Search query: Principles of Semiconductor Devices

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author_names: Marko Becker
title: Principles Of Semiconductor Devices
year: 2016

author_names: Laszlo Solymar

D B Walsh

Richard R A Syms
title: Principles of semiconductor devices
year: 2018

abstract: PART I INTRODUCTION TO SEMICONDUCTORS 1 lNTRODUCTION TO CRYSTALS AND CURRENT CARRIERS IN SEMICONDUCTORS, THE ATOMIC BOND MODEL 1.1 INTRODUCTION TO CRYSTALS 1.1.1 Atomic Bonds 1.1.2 Three Dimensional Crystals 1.1.3 Two Dimensional Crystals: Graphene and Carbon Nanotubes 1.2 CURRENT CARRIERS 1.2.1 Two Types of Current Carriers in Semiconductors 1.2.2 N*Type and P Type Doping 1.2.3 Electroneutrality Equation 1.2.4 Electron and Hole Generation and Recombination in Thermal Equilibrium 1.3 BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES 1.3.1 Crystal Growth Techniques 1.3.2 Doping Techniques Summary Problems Review Questions 2 THE ENERGY BAND MODEL 12.1 ELECTRONS AS WAVES 2.1.1 De Broglie Relationship Between Particle and Wave Properties 2.1.2 Wave Function and Wave Packet 2.1.3 Schrodinger Equation 2.2 ENERGY LEVELS IN ATOMS AND ENERGY BANDS IN CRYSTALS 2.2.1 Atomic Structure 2.2.2 Energy Bands in Metals 2.2.3 Energy Gap and Energy Bands in Semiconductors and Insulators 12.3 ELECTRONS AND HOLES AS PARTICLES 2.3.1 Effective Mass and Real E k Diagrams 2.3.2 The Question of Electron Size: The Uncertainty Principle 2.3.3 Density of Electron States 2.4 POPULATION OF ELECTRON STATES, CONCENTRATIONS OF ELECTRONS A:"D HOLES 2.4.1 Fermi Dirac Distribution 2.4.2 Maxwell Boltzmann Approximation and Effective Density of States 2.4.3 Fermi Potential and Doping 2.4.4 Nonequilibrium Carrier Concentrations and Quasi Fermi Levels Summary Problems Review Questions 3 DRIFT 3.1 ENERGY BANDS WITH APPLIED ELECTRIC FIELD 3.1.1 Energy Band Presentation of Drift Current 3.1.2 Resistance and Power Dissipation due to Carrier Scattering 3.2 OHM'S LAW, SHEET RESISTANCE, AND CONDUCTIVITY 3.2.1 Designing Integrated Circuit Resistors 3.2.2 Differential Form of Ohm's Law 3.2.3 Conductivity Ingredients 3.3 CARRIER MOBILITY 3.3.1 Thermal and Drift Velocities 3.3.2 Mobility Definition 3.3.3 Scattering Time and Scattering Cross Section 3.3.4 Mathieson's Rule 3.3.5 Hall Effect Summary Problems Review Questions 4 DlFFUSION 4.1 DIFFUSION CURRENT EQUATION 4.2 DIFFUSION COEFFICIENT 4.2.1 Einstein Relationship L4.2.2 Haynes Shockley Experiment 4.2.3 Arrhenius Equation 4.3 BASIC CONTINUITY EQUATION Summary Problems Review Questions 5 GENERATION AND RECOMBINATION 5.1 GENERATION AND RECOMBINATION MECHANISMS 5.2 GENERAL FORM OF THE CONTINUITY EQUATION 5.2.1 Recombination and Generation Rates 5.2.2 Minority Carrier Lifetime 5.2.3 Diffusion Length 5.3 GENERATION AND RECOMBINATION PHYSICS AND SHOCKLEYREAD HALL (SRH) THEORY 5.3.1 Capture and Emission Rates in Thermal Equilibrium 5.3.2 Steady State Equation for the Effective Thermal Generation/Recombination Rate 5.3.3 Special Cases 5.3.4 Surface Generation and Recombination Summary Problems Review Questions PART II FUNDAMENTAL DEVICE STRUCTURES 6 JUNCTIONS 6.1 P N JUNCTION PRINCIPLES 6.1.1 p Junction in Thermal Equilibrium 6.1.2 Reverse Biased P N Junction 6.1.3 Forward Biased P K Junction 6.1.4 Breakdown Phenomena 6.2 DC MODEL 6.2.1 Basic Current Voltage (I V) Equation 6.2.2 Important Second Order Effects 6.2.3 Temperature Effects 6.3 CAPACITA CE OF REVERSE BIASED P I JUNCTION 6.3.1 C V Dependence 6.3.2 Depletion Layer Width: Solving the Poisson Equation 6.3.3 SPICE Model for the Depletion Layer Capacitance 6.4 STORED CHARGE EFFECTS 6.4.1 Stored Charge and Transit Time 6.4.2 Relationship Between the Transit Time and the Minority Carrier Lifetime 6.4.3 Switching Characteristics: Reverse Recovery Time 6.5 METAL SEMICONDUCTOR CONTACT 6.5.1 Schottky Diode: Rectifying Metal Semiconductor Contact 6.5.2 Ohmic Metal Semiconductor Contacts Summary Problems Review Questions 7 MOSFET 7.1 MOS CAPACITOR 7.1.1 Properties of the Gate Oxide and the Oxide Semiconductor Interface 7.1.2 C V Curve and the Surface Potential Dependence on Gate Voltage 7.1.3 Energy Band Diagrams 7.1.4 Flat4Band Capacitance and Debye Length 7.2 MOSFET PRINCIPLES B.1.1 MOSFET Structure 7.2.2 MOSFET as a Voltage Controlled Switch B.1.3 The Threshold Voltage and the Body Effect B.1.4 MOSFET as a Voltage Controlled Current Source: Mechanisms of Current Saturation 7.3 PRINCIPAL CURRENT VOLTAGE CHARACTERISTICS AND EQUATIONS 7.3.1 SPICE LEVEL 1 Model 7.3.2 SPICE LEVEL 2 Model 7.3.3 SPICE LEVEL 3 Model: Principal Effects 7.4 SECO:\D OROER EFFECTS 7.4.1 Mobility Reduction with Gate Voltage 7.4.2 Velocity Saturation (Mobility Reduction with Drain Voltage) 7.4.3 Finite Output Resistance 7.4.4 Threshold Voltage Related Short Channel Effects 7.4.5 Threshold Voltage Related Narrow Channel Effects 7.4.6 Subthreshold Current 7.5 Nanoscale MOSFETs 7.5.1 Down Scaling Benefits and Rules 7.5.2 Leakage Currents 7.5.3 Advanced MOSFETs 7.6 MOS BASED MEMORY DEVICES 7.6.1 1C1T DRAM Cell 7.6.2 Flash Memory Cell Summary Problems Review Questions 8 BJT 8.1 B.JT PRINCIPLES 8.1.1 BJT as a Voltage Controlled Current Source 8.1.2 BJT Currents and Gain Definitions 8.1.3 Dependence of and Current Gains on Technological Parameters 8.1.4 The Four Modes of Operation: BJT as a Switch 8.1.5 Complementary BJT 8.1.6 BJT Versus MOSFET 8.2 PRINCIPAL CURRENT VOLTAGE CHARACTERISTICS, EBERE MOLL MODEL IN SPICE 8.2.1 Injection Version 8.2.2 Transport Version 8.2.3 SPICE Version 8.3 SECOND*ORDER EFFECTS 8.3.1 Early Effect: Finite Dynamic Output Resistance 8.3.2 Parasitic Resistances 8.3.3 Dependence of Common Emitter Current Gain on Transistor Current: Low Current Effects 8.3.4 Dependence of Common Emitter Current Gain on Transistor Current: Gummel Poon Model for High Current Effects 8.4 HETEROJUNCTION BIPOLAR TRANSISTOR Summary Problems Review Questions PART III SUPPLEMENTARY TOPICS 9 PHYSICS OF NANOSCALE DEVICES 9.1 SINGLE CARRIER EVENTS 9.1.1 Beyond the Classical Principle of Continuity 9.1.2 Current Time Form of Uncertainty Principle 9.1.3 Carrier Supply Limit to Diffusion Current 9.1.4 Spatial Uncertainty 9.1.5 Direct Nonequilibrium Modeling of Single Carrier Events 9.2 TWO DIMENSIONAL TRANSPORT IN MOSFETs AND HEMTs 9.2.1 Quantum Confinement 9.2.2 HEMT Structure and Characteristics 9.2.3 Application of Classical MOSFET Equations to Two Dimensional Transport in MOSFETs and HEMTs 9.3 ONE DIMENSUIONAL TRANSPORT IN NANOWIRES AND CARBON NANOTUBES 9.3.1 Ohmic Transport in Nanowire and Carbon Nanotube FETs 9.3.2 One Dimensional Ballistic Transport and the Quantum Conductance Limit Summary Problems Review Questions 10 DEVICE ELECTRONICS, EQUIVALENT CIRCUITS A D SPICE PARAMETERS 10.l DIODES 10.1.1 Static Model and Parameters in SPICE 10.1.2 Large Signal Equivalent Circuit in SPICE 10.1.3 Parameter Measurement 10.1.4 Small Signal Equivalent Circuit 10.2 MOSFET 10.2.1 Static Model and Parameters LEVEL 3 in SPICE 10.2.2 Parameter Measurement 10.2.3 Large Signal Equivalent Circuit and Dynamic Parameters in SPICE 10.2.4 Simple Digital ~1od.el 10.2.5 Small Signal Equivalent Circuit 10.3 BJT 10.3.1 Static Model and Parameters: Ebers Moll and Gummel Poon Levels in SPICE 10.3.2 Parameter Measurement 10.3.3 Large Signal Equivalent Circuit and Dynamic Parameters in SPICE 10.3.4 Small Signal Equivalent Circuit Summary Problems Review Questions 11 PHOTONIC DEVICES 11.1 LIGHT EMITTING DIODES (LED) 11.2 PHOTODETECTORS AND SOLAR CELLS 11.2.1 Biasing for Photodetector and Solar Cell Applications 11.2.2 Carrier Generation in Photodetectors and Solar Cells 11.2.3 Photocurrent Equation 11.3 LASERS 11.3.1 Stimulated Emission, Inversion Population, and Other Fundamental Concepts 11.3.2 A Typical Heterojunction Laser Summary Problems Review Questions 12 JFET AND MESFET 12.1 JFET 12.1.1 JFET Structure 12.1.2 JFET Characteristics 12.1.3 SPICE Model and Parameters 12.2 MESFET 12.2.1 MESFET Structure 12.2.2 MESFET Characteristics 12.2.3 SPICE Model and Parameters Summary Problems Review Questions 13 POWER DEVICES 13.1 POWER DIODES 13.1.1 Drift Region in Power Devices 13.1.2 Switching Characteristics 13.1.3 Schottky Diode 13.2 POWER MOSFET 13.3 IGBT 13.4 THYRISTOR Summary Problems Review Questions
author_names: Sima Dimitrijev
title: Principles of semiconductor devices
year: 2005

author_names: Serge Luryi
title: Physical Principles of Semiconductor Devices
year: 2014

author_names: George D Vendelin

Anthony M Pavio

Ulrich L Rohde
title: Principles of Semiconductor Devices [Book Review]
venue: IEEE Circuits and Devices Magazine
year: 2006

abstract: We present two different methods which both enable large scale first principles device simulations including electron phonon coupling (EPC) The methods are based on Density Functional Theory and Nonequilibrium Greens Functions (DFT NEGF) calculations of electron transport. The inelastic current is in both methods calculated in a post processing step to a self consistent DFT calculation. The first method is based on first order perturbation theory in the EPC self energy within the Lowest Order Expansion (LOE) approximation. The method requires calculation of the first principles EPC in the device region and it includes the effect of each phonon mode on the current perturbatively. This approach is made practical by calculating the EPC of the device region using a smaller periodic reference system. In addition, the phonon modes are assembled into a small number of energy intervals in which phonon modes are described collectively. The second method involves calculating the electron transmission for a single configuration where the atoms are displaced according to the phonon temperature of the system. Thus, this method has a computational cost equivalent to conventional elastic transport calculations. Both methods have been implemented in the Atomistix ToolKit (ATK) and we apply the methods for calculating the inelastic current in a silicon n i n junction and for calculation of phonon limited mobilities of silicon nanowires.
author_names: Tue Gunst

Mads Brandbyge

Mattias Lau Nohr Palsgaard

Troels Markussen

Kurt Stokbro
title: New approaches for first principles modelling of inelastic transport in nanoscale semiconductor devices with thousands of atoms
venue: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
year: 2017

author_names: Muhammad Ashraful Alam
title: ECE 606: Principles of Semiconductor Devices
year: 2008

author_names: Harry E Talley

D Daugherty
title: Physical principles of semiconductor devices
year: 1976

abstract: We report in this paper ab initio quantum transport simulations of different types of single layer 2 D semiconductors: transition metal and group IV dichalcogenides in the 2H or 1T phase as well as black phosphorus. The electron and hole phonon limited mobilities of eight selected 2 D crystals are first analyzed before using these materials as n or p type channels of ultra scaled single gate transistors, computing their I V characteristics in the presence of electron phonon scattering, and comparing them to each other. Finally, the properties of metal MoS2 contacts are investigated. It is revealed that the current tends to flow at the edge of the metal layer before entering the semiconductor, thus limiting the injection efficiency.
author_names: Mathieu Luisier

Aron Szabo

Christian Stieger

Cedric Klinkert

Sascha Bruck

A Jain

Lukas Novotny
title: First principles simulations of 2 D semiconductor devices: Mobility, I V characteristics, and contact resistance
venue: 2016 IEEE International Electron Devices Meeting (IEDM)
year: 2016

abstract: Precise manipulation of organic donor acceptor interfaces using spacer layers is demonstrated to suppress interface recombination in an organic photovoltaic device. These strategies lead to a dramatic improvement in a model bilayer system and bulk heterojunction system. These interface strategies are applicable to a wide variety of donor acceptor systems, making them both fundamentally interesting and technologically relevant for achieving high efficiency organic electronic devices.
author_names: Wanyi Nie

Gautam Gupta

Brian Keith Crone

Feilong Liu

Darryl L Smith

P P Ruden

Cheng-Yu Kuo

Hsinhan Tsai

Hsing-Lin Wang

Hao Li

Sergei Tretiak

Aditya D Mohite
title: Interface Design Principles for High Performance Organic Semiconductor Devices
venue: Advanced science
year: 2015