Search query: solvothermal Route to Semiconductor Nanowires

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abstract: Solvothermal synthesis is an important technology for the preparation of nanowires at low temperature. Nanowires can grow as long as 100 mm with the aid of polymer matrix, and under the pressure generated by solvothermal reactions, the as prepared nanowires are well crystallized. For water sensitive reactions, solvothermal reactions can fully avoid the presence of water. We discuss here the synthesis of a variety of nanowire structures, including CdS CdSe core sheath nanowires and very long CdS nanowires, and the solvothermal closure of PbS nanowires. Now that an appropriate procedure has been established, the solvothermal reactions are efficient and time saving.
author_names: Kaibin Tang

Yitai Qian

Jinghui Zeng

Xiaogang Yang
title: Solvothermal Route to Semiconductor Nanowires
year: 2003

author_names: Kaibin Tang

Yitai Qian

Jing-Hui Zheng

Xiaogang Yang
title: Solvothermal Route to Semiconductor Nanowires
year: 2003

abstract: The solvothermal/hydrothermal method is an important technology for producing semiconductor nanowires at low temperature. This paper presents an integrated discussion of nanowire growth, mainly from four aspects in the solvothermal/hydrothermal process. These aspects, including materials with highly anisotropic crystal structures, coordination directing/mixed solvents, surfactants/capping reagents, and reaction at relatively high temperature, have a key effect on nanowire formation in the solvothermal/hydrothermal process. These factors have instructional significance for nanowire synthesis and research of their growth process in the future.
author_names: Guifu Zou

Hui Li

Yuanguang Zhang

Kan Xiong

Yitai Qian
title: Solvothermal/hydrothermal route to semiconductor nanowires
year: 2006

abstract: Ternary Cu Bi S based compounds have been thought to be alternative materials for well known CuInS2 because of their abundance. Cu Bi S based nanomaterials have been less studied. We here report the synthesis, optical and electrical properties of single crystal Cu4Bi4S9 nanowires. High quality Cu4Bi4S9 nanowires were synthesized through a modified solvothermal route by controlling the reaction sources and temperature. The optical bandgap for Cu4Bi4S9 nanowires were determined by using UV vis NIR and cyclic voltammetry techniques. Single nanowire devices were fabricated by using lithographic techniques. The devices exhibit photoconductive response with high external quantum efficiency (2.9 x 108% Temperature dependent electrical transport properties were also investigated. We observed that the transport properties of Cu4Bi4S9 nanowire show typical semiconductor behaviour in the temperature region 10 140 K and metal like character in the temperature region of 150 300 K. The carrier transport in Cu4Bi4S9 nanowires can be described by the small polaron model in temperature region of 60 140 K and the variable range hopping mechanism in temperature region of 10 50 K. We further studied the properties of Cu4Bi4S9 nanowires in field emission devices. The devices exhibit a relatively low turn on field (6.9 V mm 1) The potential applications of Cu4Bi4S9 nanowires as field emitting materials and light absorbers in detectors are indicated.
author_names: Jing Li

Haizheng Zhong

Huijuan Liu

Tianyou Zhai

Xi Wang

Meiyong Liao

Yoshio Bando

Ruibin Liu

Bingsuo Zou
title: One dimensional ternary Cu Bi S based semiconductor nanowires: synthesis, optical and electrical properties
year: 2012

abstract: A novel one step soft solution processing route called the solvothermal copolymerization technique was successfully developed for in situ fabrication of polystyrene (PS)/CdS nanocomposites embedded with CdS nanowires in ethylenediamine media at lower temperatures (80 140 degC) In this route, the polymerization of the monomers and the formation of the CdS nanocrystallites occur simultaneously in a certain temperature range. The results of X ray powder diffraction, transmission electron microscopy, and high resolution transmission electron microscopy confirmed that the embedded CdS nanowires, with diameters of 4 15 nm and lengths up to several micrometers, have [001] preferential orientation. Both temperature and solvent were found to play a key role in the synthesis of the nanocomposites. The produced novel hybrid nanocomposites display obvious quantum size effects and interesting fluorescence features. The spectroscopic properties of the PS/CdS nanowire nanocomposites were found to be sensitive to syntheti.
author_names: Shuhong Yu

Masahiro Yoshimura

Jose Maria Calderon Moreno

Takeshi Fujiwara

Takahiro Fujino

Ryo Teranishi
title: IN SITU FABRICATION AND OPTICAL PROPERTIES OF A NOVEL POLYSTYRENE/SEMICONDUCTOR NANOCOMPOSITE EMBEDDED WITH CDS NANOWIRES BY A SOFT SOLUTION PROCESSING ROUTE
year: 2001

abstract: Soft chemistry has emerged as an important means of generating nanocrystals, nanowires and other nanostructures of semiconducting materials. We describe the synthesis of CdS and other metal chalcogenide nanocrystals by a solvothermal route. We also describe the synthesis of nanocrystals of AlN, GaN and InN by the reaction of hexamethyldisilazane with the corresponding metal chloride or metal cupferronate under solvothermal conditions. Nanowires of Se and Te have been obtained by a self seeding solution based method. A single source precursor based on urea complexes of metal chlorides gives rise to metal nitride nanocrystals, nanowires and nanotubes. The liquidliquid interface provides an excellent medium for preparing single crystalline films of metal chalcogenides.
author_names: Ujjal K Gautam

Kripasindhu Sardar

Francis Leonard Deepak

C N R Rao
title: Soft chemical routes to semiconductor nanostructures
year: 2005

abstract: In an effort to find a simple and common single source precursor route for the group 13 metal nitride semiconductor nanostructures, the complexes formed by the trichlorides of Al, Ga and In with urea have been investigated. The complexes, characterized by X ray crystallography and other techniques, yield the nitrides on thermal decomposition. Single crystalline nanowires of AlN, GaN and InN have been deposited on Si substrates covered with Au islands by using the complexes as precursors. The urea complexes yield single crystalline nanocrystals under solvothermal conditions. The successful synthesis of the nanowires and nanocrystals of these three important nitrides by a simple single precursor route is noteworthy and the method may indeed be useful in practice.
author_names: Kripasindhu Sardar

Meenakshi Dan

Birgit Schwenzer

C N R Rao
title: A simple single source precursor route to the nanostructures of AlN, GaN and InN
year: 2005

abstract: Quaternary semiconductor Cu2CoSnS4 single crystalline nanowires arrays have been prepared through a solvothermal synthetic route by using anodic aluminum oxide as a hard template. The as prepared Cu2CoSnS4 nanowires are uniform with a [112] growth direction. An optimal solvent of diethylenetriamine is critical for the formation of single crystalline Cu2CoSnS4 nanowires. The structure, morphology, composition, and optical absorption properties of the as prepared Cu2CoSnS4 nanowires were characterized by using X ray powder diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive X ray spectroscopy, and UV/Vis spectroscopy. A thin film prepared from Cu2CoSnS4 single crystalline nanowires displayed a clear photoelectric response, which suggested its potential application in photovoltaic devices.
author_names: Liang Shi

Ya'nan Li

Haojun Zhu

Quan Li
title: Well Aligned Quaternary Cu2CoSnS4 Single Crystalline Nanowires as a Potential Low Cost Solar Cell Material
year: 2014

abstract: Abstract Large scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single crystalline nature of CdS nanowires with an oriented growth along the c axis direction. The optical properties of the products were characterized by UV vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I V curves measured on single NW by the metal semiconductor metal model based on thermionic field emission theory.
author_names: Shancheng Yan

Litao Sun

Peng Qu

Ninping Huang

Yinchen Song

Zhongdang Xiao
title: Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property
year: 2009

abstract: Abstract Solvothermal technique, an one step soft solution processing route was successfully employed to synthesize single crystalline CdS nanowires in ethylenediamine medium at lower temperature (170 for 1 8 d. In this route, polyethylene glycol 400 (PEG400) was used as surfactant, which played a crucial role in preferentially oriented growth of semiconductor nanowires. Characterizations of as prepared CdS nanowires by X ray powder diffraction(XRD) transmission electron microscopy(TEM) indicate that the naonowires, with typical diameters of 20nm and lengths up to several micrometers, have preferential [001] orientation. Also, investigations into the physical properties of the CdS nanowires were conducted with UV Vis absorption spectroscopy and photoluminescence emission spectroscopy. The excitonic photo optical phenomena of the nanowires shows the potential in the practical applications.
author_names: Guoyue Xu

Hanli Wang

Chuanwei Cheng

Haiqian Zhang

Jie-ming Cao

Guangbin Ji
title: Synthesis of single crystalline CdS nanowires with polyethylene glycol 400 as inducing template
year: 2006