Search query: InAs InAsSb   Type-II superlattice

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abstract: Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type II strain balanced superlattice material are evaluated using temperature and field dependent magnetotransport measurements performed in the vertical direction on a substrate removed metal semiconductor metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. High resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 x 10 3 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.
author_names: Lilian K Casias

Christian P Morath

Elizabeth H Steenbergen

Gilberto A Umana-Membreno

Preston T Webster

Julie V Logan

Jin Young Kim

Ganesh Balakrishnan

Lorenzo Faraone

Sanjay Krishna
title: Vertical carrier transport in strain balanced InAs/InAsSb type II superlattice material
year: 2020

abstract: Abstract In this paper, we report on the demonstration of a midwave infrared (MWIR) Ga free InAs/InAsSb superlattice (SL) barrier detector, grown monolithically on a Si substrate by molecular beam epitaxy (MBE) Prior to the use of MBE, the (1 0 0) Si substrate was prepared in situ in a metal organic chemical vapor deposition (MOCVD) reactor, where an 800 nm thick GaSb buffer layer was grown. Next, a barrier structure with an active zone made of strain balanced InAs/InAsSb SL, lattice matched to GaSb, was epitaxied. Structural characterisations revealed that the material quality was degraded compared with the sample grown on GaSb. The processed Ga free SL barrier detector has a 100% cut off wavelength of 5 um at 150 K, for a bias operation of 500 mV. A combined analysis involving electrical and electro optical characterisation was performed to identify the operating regimes in this MWIR Ga free SL barrier structure.
author_names: Quentin Durlin

J P Perez

Laurent Cerutti

Jean-Baptiste Rodriguez

Tiphaine Cerba

Thierry Baron

Eric Tournie

Philippe Christol
title: Midwave infrared barrier detector based on Ga free InAs/InAsSb type II superlattice grown by molecular beam epitaxy on Si substrate
year: 2019

abstract: We report focal plane array (FPA) results on a mid wavelength InAs/InAsSb type II strained layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 mm. For 300 K background in the 3 5 mm band, f/2 aperture, an FPA operating at 150 K exhibits a mean noise equivalent differential temperature (NEDT) of 18.5 mK, and an NEDT operability of 99.7% The NEDT distribution has a width of 8 mK, with no noticeable distribution tail, indicating excellent uniformity. The mean noise equivalent irradiance is 9.1 x 10<sup>11</sup> photons/sec cm<sup>2</sup> The mean quantum efficiency is 49.1% without antireflection coating, and the mean specific detectivity (D<sup>/sup> is 2.53 x 10<sup>11</sup> cm Hz<sup> 1/2 /sup>/W. Benefitting from an absorber material with a much longer Shockley Read Hall minority carrier lifetime, and a device architecture that suppresses generation recombination and surface leakage dark current, the InAs/InAsSb T2SLS barrier infrared detector FPA has demonstrated a significantly higher operating temperature than the mid wavelength infrared market leading InSb.
author_names: David Z Ting

Sir Rafol

Sam Keo

Jean Nguyen

Arezou Khoshakhlagh

Alexander Soibel

Linda Hoglund

Anita Fisher

Edward Luong

Jason Mumolo

John K Liu

Sarath D Gunapala
title: InAs/InAsSb Type II Superlattice Mid Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb
venue: IEEE Photonics Journal
year: 2018

abstract: Abstract By introducing a double barrier design, a high performance InAs/InAsSb type II superlattice mid wavelength infrared photodetector has been demonstrated. The photodetector exhibits a cut off wavelength of ~4.50 um at 150 K. At 150 K and 120 mV applied bias, the photodetector exhibits a dark current density of 1.21 x 10 5 A/cm2, a quantum efficiency of 45% at peak responsivity ~3.95 um) and a specific detectivity of 6.9 x 1011 cm*Hz1/2/W. The photodetector shows background limited operating temperature up to 160 K.
author_names: Donghai Wu

Jiakai Li

Arash Dehzangi

Manijeh Razeghi
title: High performance InAs/InAsSb Type II superlattice mid wavelength infrared photodetectors with double barrier
year: 2020

abstract: The InAs/InAsSb (Gallium free) type II strained layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 um and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.
author_names: David Z Ting

Sir Rafol

Arezou Khoshakhlagh

Alexander Soibel

Sam Keo

Anita Fisher

Brian Pepper

Cory Hill

Sarath D Gunapala
title: InAs/InAsSb Type II Strained Layer Superlattice Infrared Photodetectors
venue: Micromachines
year: 2020

abstract: Abstract The InAs/InAs1 xSbx type II superlattices (T2SLs) grown on GaSb buffer layer and GaAs substrates have recently been applied for detectors for long wavelength infrared (LWIR) range and high operating temperature (HOT) conditions. The detailed modeling of T2SLs minibands structure required for detector's design optimization process relies on accurate knowledge of the InAs1 xSbx bandgap and band edge position. The kp (8 x 8 method) was used to analyze the valence band offset (VBO) between InAs and InAs1 xSbx, and hence the InAs1 xSbx band edge position at required xSb composition. An increase of the VBO leads to the structure transformation from type IIb to type II superlattices. The required energy bandgap can be reached by changing the conduction band offset (CBO) and the energy bandgap bowing parameter. The temperature dependence of the experimental results of InAs/InAs1 xSbx T2SLs energy bandgap was found to be comparable with theoretical one when energy bandgap bowing parameter is dependent on temperature. The proper fitting of theoretically calculated and experimentally measured spectral response characteristics was shown.
author_names: Tetiana Manyk

Krystian Michalczewski

Krzysztof Murawski

Kacper Grodecki

Jaroslaw Rutkowski

Piotr Martyniuk
title: Electronic band structure of InAs/InAsSb type II superlattice for HOT LWIR detectors
year: 2018

abstract: Optical and structural properties of InAs/InAsSb type II superlattices (T2SL) and their feasibility for mid and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 mm to 12 mm are grown by molecular beam epitaxy and characterized by highresolution x ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.
author_names: Oray Orkun Cellek

Hua Li

Xiao-Meng Shen

Zhiyuan Lin

Elizabeth H Steenbergen

D W Ding

Shi Liu

Qiang Zhang

Ha sul Kim

Jin Fan

Michael J DiNezza

W Hank G Dettlaff

Preston T Webster

Zhao-Yu He

Jing-Jing Li

Shane R Johnson

David John Smith

Yong-Hang Zhang
title: InAs/InAsSb Type II superlattice: a promising material for mid wavelength and long wavelength infrared applications
venue: Defense Commercial Sensing
year: 2012

abstract: We recently reported mid wavelength infrared (MWIR) InAs/InAsSb type II strained layer superlattice (T2SLS) unipolar barrier detectors and focal plane arrays with significantly higher operating temperature than InSb. Herein, we document the development leading to the MWIR InAs/InAsSb T2SLS detectors at the NASA Jet Propulsion Laboratory. We also briefly compare the InAs/InAsSb T2SLS with some other approaches.
author_names: David Z Ting

Alexander Soibel

Arezou Khoshakhlagh

Sam Keo

Sir Rafol

Linda Hoglund

Edward Luong

Anita Fisher

Cory Hill

Sarath D Gunapala
title: Development of InAs/InAsSb Type II Strained Layer Superlattice Unipolar Barrier Infrared Detectors
venue: Journal of Electronic Materials
year: 2019

abstract: The InAs/InAsSb (Gallium free) type II strained layer superlattice (T2SLS) is an adjustable band gap, broad band III V infrared detector material that has emerged in recent years as an alternative to the more established InAs/GaSb type II superlattice. We have reported results on a mid wavelength focal plane array (FPA) based on the InAs/InAsSb T2SLS unipolar barrier infrared detector architecture. Significantly, the FPA exhibits very good operating characteristics at 160 K, demonstrating a considerably operating temperature advantage over the MWIR market leading InSb FPAs, while maintaining III V semiconductor manufacturing robustness. In this article we summarize the development at the NASA Jet Propulsion Laboratory leading to the mid wavelength InAs/InAsSb T2SLS infrared detectors, provide a brief look at the history of the development of the InAs/InAsSb T2SLS absorber, and survey the current status of InAs/InAsSb T2SLS detectors.
author_names: David Z Ting

Alexander Soibel

Arezou Khoshakhlagh

Sam Keo

Sir Rafol

Anita Fisher

Cory Hill

Edward Luong

Brian Pepper

Sarath D Gunapala
title: The emergence of InAs/InAsSb type II strained layer superlattice barrier infrared detectors
venue: Defense Commercial Sensing
year: 2019

abstract: We studied Ga free InAs/InAsSb type II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid wavelength infrared domain (MWIR, 3 5mm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n type GaSb substrate and exhibited cut off wavelength between 5mm and 5.5mm at 150K. Electro optical and electrical results of the device are reported and compared to the usual InSb MWIR photodiode.
author_names: J P Perez

Quentin Durlin

Philippe Christol
title: Ga free InAs/InAsSb type II superlattice (T2SL) photodetector for high operating temperature in the midwave infrared spectral domain
venue: International Conference on Space Optics
year: 2019