Search query: state of semiconductor technology

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abstract: Abstract Applications of the wide band gap (WBG) semiconductors, such as GaN, AlGaN, and InGaN, range from lighting and ultraviolet (UV) technology to high power, radiation hard, high temperature, terahertz (THz) and sub THz electronics and pyroelectronics. Wurtzite (hexagonal) symmetry makes these materials to be quite different from conventional cubic semiconductors. Spontaneous and piezoelectric polarization associated with the wurtzite crystal structure induces two dimensional electron gases at AlGaN/GaN, AlInN/GaN, and AlGaN/InGaN interfaces with sheet concentrations 10 20 times higher than those in Si CMOS. A high current carrying capability and a high breakdown field make these materials perfect for high power applications. Adjusting the energy gaps of AlxGa1 xN and of InxGa1 xN by varying the molar fraction changes the wavelength of light they emit or absorb and enables light and UV emitters, solar cells, and photodetectors operating from THz and infrared to deep UV range. Blue, green, and white LEDs using InGaN revolutionized smart solid state lighting. AlGaN UV LEDs are used for water purification, fighting antibiotic resistant bacteria and viruses, and dramatically increasing produce storage time. InN, ZnO, and BN have potential to compete with the AlN/GaN family. Diamond has re emerged not only as a substrate for a record heat removal but also as a viable THz detector material. The WBG technology has many difficult problems to solve. High dislocation density in the WBG materials leads to a low efficiency of deep AlGaN UV LEDs and reliability problems of high power devices. Non uniformities of the electric field distribution cause a premature breakdown. Using ultrathin WBG quantum well layers and nanowires and exploring radically new physics based device designs might alleviate or even solve these problems.
author_names: Michael S Shur
title: Wide band gap semiconductor technology: State of the art
venue: Solid State Electronics
year: 2019

abstract: The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.
author_names: Henry H Radamson

Huilong Zhu

Zhenhua Wu

Xiaobin He

Hongxiao Lin

Jinbiao Liu

Jinjuan Xiang

Zhenzhen Kong

Wenjuan Xiong

Junjie Li

Hushan Cui

Jian-feng Gao

Hong Yang

Yong Du

Buqing Xu

Ben Li

Xuewei Zhao

Jiahan Yu

Yan Dong

Guilei Wang
title: State of the Art and Future Perspectives in Advanced CMOS Technology
venue: Nanomaterials
year: 2020

abstract: The power density limits of complementary metal oxide semiconductor (CMOS) technology could be overcome by moving from a binary to a ternary logic system. However, ternary devices are typically based on multi threshold voltage schemes, which make the development of power scalable and mass producible ternary device platforms challenging. Here we report a wafer scale and energy efficient ternary CMOS technology. Our approach is based on a single threshold voltage and relies on a third voltage state created using an off state constant current that originates from quantum mechanical band to band tunnelling. This constant current can be scaled down to a sub picoampere level under a low applied voltage of 0.5 V. Analysis of a ternary CMOS inverter illustrates the variation tolerance of the third intermediate output voltage state, and its symmetric in out voltage transfer characteristics allow integrated circuits with ternary logic and memory latch cell functions to be demonstrated. Quantum mechanical band to band tunnelling can be used to create an energy efficient ternary logic technology that can be fabricated on the wafer scale using complementary metal oxide semiconductor (CMOS) processes.
author_names: Jae Won Jeong

Young Eun Choi

Woo Seok Kim

Jee-Ho Park

Sunmean Kim

Sunhae Shin

Kyuho Lee

Jiwon Chang

Seong-Jin Kim

Kyung Rok Kim
title: Tunnelling based ternary metal oxide semiconductor technology
venue: Nature Electronics
year: 2019

abstract: This paper presents a systematized review of the research on the production of nanosecond high power pulses using solid state generators based on an inductive energy store and a semiconductor opening switch that have been performed in the past 25 years. This research has been underway since 1992 1993 when the nanosecond cutoff of ultrahigh density currents in semiconductor diodes was discovered and named the SOS (Semiconductor Opening Switch) effect. The discovery of the SOS effect provided a breakthrough in the development of semiconductor generators, as their most important characteristics, such as pulse power and output voltage, were increased tens and hundreds of times compared with previously known semiconductor generators. In particular, in the nanosecond semiconductor technology, megavolt voltages combined with gigawatt peak powers have been achieved. This review considers the main physical processes that determine the mechanism of operation of a SOS based on the SOS effect. The principle of operation, design, and characteristics of SOS diodes and SOS generators is described, and prospects for their further development are discussed. Examples are given of using SOS generators in various pulsed power applications such as electron accelerators, X ray pulse devices, high power microwave electronics, pumping of gas lasers, and ignition of electrical discharges.
author_names: Sergei N Rukin
title: Pulsed power technology based on semiconductor opening switches: A review.
venue: The Review of scientific instruments
year: 2020

abstract: A new time domain wideband numerical model for simulation of quantum dot reflective semiconductor optical amplifier (QD RSOA) steady state and dynamic behavior, is described. The model is used to investigate 1 ps full width at half maximum input Gaussian pulse amplification and also modulation cancellation. A large modulation cancellation dynamic range of about 35 dB, is predicted for high input powers, which is not attainable in bulk and QW RSOAs. The model can be applied to traveling wave and reflective QD SOAs. The combination of the unique features of quantum dots and a reflective structure can be used to realize a colorless modulator for wavelength division multiplexed passive optical networks (WDM PONs)
author_names: Khalil Safari Anzabi

Amir Habibzadeh-Sharif

Michael J Connelly

Ali Rostami
title: Wideband Steady State and Pulse Propagation Modeling of a Reflective Quantum Dot Semiconductor Optical Amplifier
venue: Journal of Lightwave Technology
year: 2020

abstract: The International Technology Roadmap for Semiconductors (ITRS) has roadmapped technology requirements of the semiconductor industry over the past two decades. The roadmap identifies major challenges in advanced technology and leads the investment of research in a cost effective way. Traditionally, the ITRS identifies major semiconductor IC products as drivers; these set requirements for the state of the art semiconductor technologies. High performance microprocessor unit (MPU HP) for servers and consumer portable system on chip (SOC CP) for smartphones are two examples. Throughout the history of the ITRS, Moore's Law has been the main impetus for these drivers, continuously pushing the transistor density to scale at a rate of 2x per technology generation (aka "node" However, as new requirements from applications such as data center, mobility, and context aware computing emerge, the existing roadmapping methodology is unable to capture the entire evolution of the current semiconductor industry. Today, comprehending how key markets and applications drive the process, design and integration technology roadmap requires new system level studies along with chip level studies. In this paper, we extend the current ITRS roadmapping process with studies of key requirements from a system level perspective, based on multiple generations of smartphones and microservers. We describe potential new system drivers and new metrics, and we refer to the new system level framing of the roadmap as ITRS 2.0.
author_names: Juan Antonio Carballo

Wei-Ting Jonas Chan

Paolo A Gargini

Andrew B Kahng

Siddhartha Nath
title: ITRS 2.0: Toward a re framing of the Semiconductor Technology Roadmap
venue: 2014 IEEE 32nd International Conference on Computer Design (ICCD)
year: 2014

abstract: The Planar Technology. Solid State Technology. Vapor Phase Growth. Thermal Oxidation. Solid State Diffusion. Semiconductors and Semiconductor Devices. Elements of Semiconductor Physics. Semiconductors under Non Equilibrium Conditions. p n Junction. Junction Transistor. Junction Field Effect Transistors. Surface Effects and Surface Controlled Devices. Theory of Semiconductor Surfaces. Surface Effects on p n Junctions. Surface Field Effect Transistors. Properties of the Silicon Silicon Dioxide System.
author_names: Andrew S Grove
title: Physics and Technology of Semiconductor Devices
year: 1967

abstract: This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology GADEST 2003" which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. It provided a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology, to reflect upon aspects of the coming era of conversion from micro electronics to nano electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
author_names: H W Richter

Martin Kittler
title: Gettering and defect engineering in semiconductor technology GADEST 2003 proceedings of the 10th International Autumn Meeting, Seehotel Zeuthen (suburb of Berlin) State of Brandenburg, Germany, September 21 26, 2003
year: 2004

abstract: Abstract The electrical detection of DNA methylation based biomarkers using semiconductor technology shows great promise for early cancer screening. Presented is the very first proof of concept example of using CMOS based technology for real time DNA methylation detection using Ion Sensitive Field Effect Transistors (ISFETs) An electrochemical label free approach was applied in two gene assays, each one of which incorporated the sequences of DAPK 1 and CDKN 2 A p 16 INK 4 p 16) gene promoters at a both methylated and unmethylated state, performing isothermal methylation specific amplification and detection both in tube and on chip (real time) Good discrimination was shown between the two states, achieving a very good average pH signal change for the methylated state of 1.91 for DAPK 1 assay and of 1.58 for p 16 assay in the tube test. The real time on chip test showed similarly good real time differential signal change in favour of methylated DNA, reaching 37 mV for DAPK 1 assay and 23 mV for p 16 assay, validating the results from the proof of concept test of pH LAMP in tube while confirming the sensitivity of real time methylation specific pH LAMP on chip.
author_names: Melpomeni Kalofonou

Christofer Toumazou
title: Semiconductor technology for early detection of DNA methylation for cancer: From concept to practice
year: 2013

abstract: An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bull's eye cavity with a broadband high Purcell factor of up to 11.3, we generate entangled photon pairs with a state fidelity of 0.90(1) pair generation rate of 0.59(1) pair extraction efficiency of 0.62(6) and photon indistinguishability of 0.90(1) simultaneously. Our work will open up many applications in high efficiency multiphoton experiments and solid state quantum repeaters.
author_names: Hui Wang

Hai Hu

T H Chung

Jian Qin

Xiaoxia Yang

J-P Li

R-Z Liu

Han-Sen Zhong

Y -M He

Xing Ding

Y -H Deng

Qing Dai

Yongheng Huo

Sven Hofling

Chao-Yang Lu

Jian-Wei Pan
title: On Demand Semiconductor Source of Entangled Photons Which Simultaneously Has High Fidelity, Efficiency, and Indistinguishability.
venue: Physical review letters
year: 2019