Search query: quantum dot laser relative intensity noise

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abstract: The intensity noise of a quantum dot, coherent comb source laser is characterized using time and frequency domain measurements. The time domain measurements yield the average relative intensity noise (RIN) over the measurement bandwidth, and by calculation, the correlation time and power spectral density (frequency resolved RIN) The frequency domain measurements yield the RIN spectrum and, by calculation, the integrated RIN. The short duration (50 \mu$s) time domain results exhibit a line to line variability in the properties of the intensity noise that is not revealed by the frequency domain measurements. It is shown that the RIN of a comb line can be reduced by over 13 dB using a saturated semiconductor optical amplifier (SOA) The performance of a low complexity, low latency 40 Gb/s intensity modulation, direct detection system using a comb line as a CW source, without and with SOA based noise suppression, is assessed in terms of the bit error ratio.
author_names: John C Cartledge

M O'sullivan
title: Time and Frequency Domain Characterization of the Relative Intensity Noise of a Quantum Dot Frequency Comb Source Laser
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2019

abstract: We report a reduction of the relative intensity noise (RIN) in a dual state emitting quantum dot laser subject to the state selective optical feedback on the ground state and excited state. Numerically, we map the evolution of the RIN for variations of the optical feedback phases for both states. We report important differences in the impact of the feedback when applied to the ground or excited state, and observe regimes for which a significant reduction in RIN is achieved. Experimentally, we confirm these results and achieve a 16 dB reduction of the RIN via a careful and independent tuning of the optical feedback phase for each state.
author_names: Robert Pawlus

Stefan Breuer

Martin Virte
title: Relative intensity noise reduction in a dual state quantum dot laser by optical feedback.
venue: Optics letters
year: 2017

abstract: We investigate the spectrally resolved relative intensity noise (RIN) of a dual state emitting quantum dot (QD) laser in dependence on the laser biasing conditions. We study the RIN under free running conditions as well as under external optical feedback (OFB) We i!nd an improvement in RIN of the free running laser when ground state (GS) and excited state (ES) emit simultaneously as compared to a single state emission. Furthermore, we i!nd an improvement in RIN under external OFB.
author_names: Robert Pawlus

Mariangela Gioannini

Martin Virte

Wolfgang Elsasser

Stefan Breuer
title: Investigations on the relative intensity noise of a two state quantum dot laser
venue: SPIE Photonics Europe
year: 2016

abstract: This paper investigates the intensity noise and pulse oscillation characteristics of an InAs/GaAs quantum dot laser epitaxially grown on germanium. We show that the relative intensity noise of the free running laser generally decreases with increasing pump current, and the minimum value reaches down to about $126 dB/Hz. The intensity noise is hardly affected by the optical feedback, unless there is a resonance or pulse oscillation in the noise spectrum. The laser pumped at a high current is more sensitive to the optical feedback. Interestingly, it is found that the free running Ge based quantum dot laser generates self sustained pulse oscillations with one period or two periods upon the pump current, without incorporating saturable absorbers. This behavior is valuable for both self generation of photonic microwaves and for understanding nonlinear dynamics of semiconductor lasers.
author_names: Yueguang Zhou

Jianan Duan

Heming Huang

Xuyi Zhao

Chunfang Cao

Qian Gong

Frederic Grillot

Cheng Wang
title: Intensity Noise and Pulse Oscillations of an InAs/GaAs Quantum Dot Laser on Germanium
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2019

abstract: This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low noise quantum dot oscillators for high speed communications, optical frequency combs, and radar applications.
author_names: Jianan Duan

Xing-guang Wang

Yueguang Zhou

Cheng Wang

Frederic Grillot
title: Carrier Noise Enhanced Relative Intensity Noise of Quantum Dot Lasers
venue: IEEE Journal of Quantum Electronics
year: 2018

abstract: In this paper, for the first time, we present a semiclassical noise model for InAs/GaAs quantum dot (QD) laser considering two photon modes, i.e. ground and first excited states lasing. This model is based on the five level rate equations. By using this model, the effect of temperature variations on relative intensity noise (RIN) of QD laser is investigated. We find that the RIN significantly degrades when excited state (ES) lasing emerges at high temperature. Furthermore, we investigate the influence of the quantum dot numbers on the RIN properties.
author_names: Ashkan Horri

Seyedeh Zahra Mirmoeini

Rahim Faez
title: Relative intensity noise study in two mode quantum dot laser
year: 2011

abstract: We report the relative intensity noise (RIN) characteristics of an InAs quantum dot (Qdot) laser epitaxially grown on the Ge substrate. It is found that the minimum RIN of the Ge based Qdot laser is around 120 dB/Hz, which is 15 dB higher than that of a native GaAs based Qdot laser with the same layer structure. The higher RIN in the Ge based laser can be attributed to the high density epitaxial defects of threading dislocations and antiphase domain boundaries.
author_names: Yueguang Zhou

Cheng Zhou

Chunfang Cao

Jiangbing Du

Qian Gong

Cheng Wang
title: Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge
year: 2017

abstract: We describe modulation responses and relative intensity noise (RIN) spectra of an InAs/GaAs quantum dot laser operating near 1300 nm. A very large nonlinear gain compression coefficient yields a highly damped modulation response with a maximum 3 dB bandwidth of ~6.5 GHz and flat RIN spectra which reach as low a level as 158/ 160 dB/Hz at frequencies up to 10 GHz.
author_names: Amir Capua

L Rozenfeld

Vissarion Mikhelashvili

Gadi Eisenstein

Matthias Kuntz

Matthias Laemmlin

Dieter H Bimberg
title: Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser.
venue: Optics express
year: 2007

abstract: We report, for the first time, a low noise high channel count 20 GHz passively mode locked quantum dot laser grown on CMOS compatible on axis (001) silicon substrate. The laser demonstrates a wide mode locking regime in the O band. A record low timing jitter value of 82.7 fs (4 80 MHz) and a narrow RF 3 dB linewidth of 1.8 kHz are reported. A total of 58 wavelength channels within 3 dB optical bandwidth (80 lines within 10 dB) is also shown. The integrated average relative intensity noise values of the whole spectrum and a single channel are 152 dB/Hz and 133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively.
author_names: Songtao Liu

Daehwan Jung

Justin C Norman

M J Kennedy

Arthur C Gossard

John E Bowers
title: A Low Noise High Channel Count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si
venue: 2019 Optical Fiber Communications Conference and Exhibition (OFC)
year: 2019

abstract: We report low noise, high performance single transverse mode 1.3 mm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow ridge waveguide Fabry Perot (FP) lasers have achieved a room temperature continuous wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90degC. An ultra low relative intensity noise of less than 150 dB/Hz is measured in the 4 16 GHz range. Using this low noise Si based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF 28. These low cost FP laser devices are promising candidates to provide cost effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.
author_names: Mengya Liao

Siming Chen

Zhixin Liu

Lalitha Ponnampalam

Zichuan Zhou

Jiang Wu

Mingchu Tang

Samuel Shutts

Zizhuo Liu

Peter M Smowton

Siyuan Yu

Alwyn J Seeds

Huiyun Liu
title: Low noise 1.3 mm InAs/GaAs quantum dot laser monolithically grown on silicon
year: 2018