Search query: Zirconium oxide dielectric

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abstract: Solution processing of metal oxides has been the focal point of interest for many researchers mainly because of the cost effectiveness and improved properties of metal oxides. However, achieving uniform and high quality film deposition has been a recurring challenge using various wet chemical techniques. Herein, we report a fully solution based fabrication process exploiting both the ultrasonic spray pyrolysis (USP) and spin coating techniques owing to their simplicity, high degree of freedom for mixing metal oxide precursor salt, and larger area deposition. An amorphous zirconium oxide (ZrOx) dielectric and zinc tin oxide (ZTO) semiconductor were deposited, respectively. The dielectric characteristics of the ZrOx thin films were accessed by fabricating MIS devices for the samples deposited at 200 degC and 400 degC, which exhibited a capacitance of 0.35 and 0.67 mF cm 2 at 100 kHz and relative permittivity of 8.5 and 22.7, respectively. The ZrOx thin film was then integrated as the gate dielectric layer in ZTO solution processed thin film transistors, exhibiting a high electrical performance with low hysteresis 0.18 V) high on/off current ratio of 106 orders of magnitude, saturation mobility of 4.6 cm2 V s 1, subthreshold slope of 0.25 V dec 1, and operating at a low voltage window of 3 V. Based on these results, the as fabricated ZTO/ZrOx TFT opens the potential application of solution processed transistors for low cost electronic devices.
author_names: Abayomi T Oluwabi

Atanas Katerski

E Carlos

Rita Branquinho

Arvo Mere

Malle Krunks

Elvira Fortunato

Luis Pereira

Ilona Oja Acik
title: Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide based thin film transistor
year: 2020

abstract: The fully inkjet printed top gate metal oxide thin film transistors (TFTs) with excellent electrical performance are realized with the gate dielectric layer of scandium zirconium oxide (Sc<sub>1</sub>Zr<sub>1</sub>O<sub><italic>x</italic>/sub> It is found that adding of nitrate based scandium oxide (ScO<sub><italic>x</italic>/sub> precursor into the chloride ligand based zirconium oxide (ZrO<sub><italic>x</italic>/sub> precursor will reduce the corrosivity of the mixed solution, and the incorporation of Zr ions into ScO<sub><italic>x</italic>/sub> will suppress the hydrogen ion migration and eliminate the acceptor like traps in pure ScO<sub><italic>x</italic>/sub> The fully printed indium gallium oxide (InGaO) TFTs based on Sc<sub>1</sub>Zr<sub>1</sub>O<sub><italic>x</italic>/sub> dielectric exhibited an average mobility of 10.8 cm<inline formula> <tex math notation="LaTeX"{2} \text{V}\vphantom {R^ {1} \cdot \text{s} {1} /tex math>/inline formula> a highest mobility of 12.9 cm<inline formula> <tex math notation="LaTeX"{2} \cdot \text{V} {1} \cdot \text{s} {1} /tex math>/inline formula> negligible hysteresis, and excellent stability under both the negative and positive bias stresses. In addition, a resistor loaded inverter was fabricated using a fully printed InGaO TFT, which exhibited the full swing characteristics and a maximum gain of 5 at 2 V.
author_names: Yuzhi Li

Linfeng Lan

Shiben Hu

Peixiong Gao

Xingqiang Dai

Penghui He

Xifeng Li

Junbiao Peng
title: Fully Printed Top Gate Metal Oxide Thin Film Transistors Based on Scandium Zirconium Oxide Dielectric
venue: IEEE Transactions on Electron Devices
year: 2019

abstract: Solution processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrOx) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at room temperature. Atomic force microscopy reveals a smooth and uniform film with the root mean square roughness reduced from 0.63 nm (UVO O) to 0.28 nm (UVO 120) in the UV ozone treated ZrOx films. X ray photoelectron spectroscopy analysis indicates the formation of a Zr O network on the surface film, and oxygen vacancy is reduced in the ZrOx lattice by increasing the UV ozone treatment time. The leakage current density in Al/ZrOx/p Si structure was reduced by three orders of magnitude by increasing the UV ozone exposure time, while the capacitance was in the range 290 266 nF/cm2, corresponding to a relative permittivity (k) in the range 5.8 6.6 at 1 kHz. An indium gallium zinc oxide (IGZO) based thin film transistor, employing a UV treated ZrOx gate dielectric deposited at 200 degC, exhibits negligible hysteresis, an Ion/Ioff ratio of 104, a saturation mobility of 8.4 cm2 V 1S 1, a subthreshold slope of 0.21 V.dec 1, and a Von of 0.02 V. These results demonstrate the potentiality of low temperature sprayed amorphous ZrOx to be applied as a dielectric in flexible and low power consumption oxide electronics.
author_names: Abayomi T Oluwabi

Diana Patricia Rodrigues Gaspar

Atanas Katerski

Arvo Mere

Malle Krunks

Luis Pereira

Ilona Oja Acik
title: Influence of Post UV/Ozone Treatment of Ultrasonic Sprayed Zirconium Oxide Dielectric Films for a Low Temperature Oxide Thin Film Transistor
venue: Materials
year: 2019

abstract: Abstract Hafnium zirconium oxide (HZO) is promising for applications in future memory devices and energy storage and harvesting. While many studies have focused upon the dielectric and structural properties of HZO, much less investigated are their thermal properties, particularly in thin film form. We present the first report on the thermal conductivity of plasma enhanced atomic layer deposited (PEALD) HZO thin films. Steady state thermoreflectance measures the effective thermal conductivity of undoped and yttrium doped HZO films and their interfaces. The effective thermal conductivity of the undoped film is found to be 0.75 W m 1 K 1, which is comparable to those reported previously for thermal ALD HZO films with similar composition. With increasing yttrium doping level, the effective thermal conductivity slightly decreases down to 0.67 W m 1 K 1 owing to dopant scattering of phonons. Our PEALD HZO films are nanocrystalline as observed by grazing incidence X ray diffraction and transmission electron microscopy.
author_names: Jihyun Kim

Sungje Lee

Yiwen Song

Sukwon Choi

Jihwan An

Jungwan Cho
title: Thermal conductivity of plasma enhanced atomic layer deposited hafnium zirconium oxide dielectric thin films
year: 2021

abstract: We demonstrated solution processed thin film transistors on a peroxo zirconium oxide (ZrO(2) dielectric with a maximum temperature of 350 degC. The formation of ZrO(2) films was investigated by TG DTA, FT IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H(2)O(2) The H(2)O(2) forms peroxo groups in the ZrO(2) film producing a dense amorphous phase and a smooth surface film. Because of these characteristics, the ZrO(2) film successfully blocked leakage current even in annealing at 300 degC. Finally, to demonstrate that the ZrO(2) film is dielectric, we fabricated thin film transistors (TFTs) with a solution processed channel layer of indium zinc oxide (IZO) on ZrO(2) films at 350 degC. These TFTs had a mobility of 7.21 cm(2)(V s) a threshold voltage (V(th) of 3.22 V, and a V(th) shift of 1.6 V under positive gate bias stress.
author_names: Jeehong Park

Young Bum Yoo

Keun Ho Lee

Woo Soon Jang

Jin Young Oh

Soo Sang Chae

Hong Koo Baik
title: Low temperature, high performance solution processed thin film transistors with peroxo zirconium oxide dielectric.
venue: ACS applied materials interfaces
year: 2013

abstract: Abstract A simple, facile surface sol gel method is introduced for the fabrication of zirconium oxide films for use as a dielectric layer of a solution processed polymer field effect transistor (PFET) High dielectric strength is demonstrated for a zirconium oxide layer under room temperature fabrication conditions using a surface sol gel method without any post treatments, which are typically needed in general sol gel methods. X ray photoemission spectroscopy showed that the fabricated zirconium oxide layer consists of inorganic ZrO2 and organic alkoxide groups, which can explain its marginal dielectric constant ~9) and continuous film properties. In addition, by finishing the surface sol gel synthesis at the stage of chemisorption, the hydrophobic nature of the final surface was retained, leading to a trap free semiconductor/dielectric interface. As a result, the PFET made with a conventional polymeric semiconductor rendered nearly hysteresis free and high mobility (0.3 cm2/V) characteristics at low voltage
author_names: Byung Tack Lim

Jangwhan Cho

Kwang Hee Cheon

Kyu Min Sim

Kwonwoo Shin

Dae Sung Chung
title: Zirconium oxide dielectric layer grown by a surface sol gel method for low voltage, hysteresis free, and high mobility polymer field effect transistors
year: 2016

abstract: We developed a solution processed indium oxide (In2O3) thin film transistor (TFT) with a boron doped peroxo zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 degC, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG DTA) attenuated total reflectance Fourier transform infrared spectroscopy (ATR FT IR) high resolution X ray diffraction (HR XRD) and X ray photoelectron spectroscopy (XPS) Boron was selected as a dopant to make a denser ZrO2 film. The ZrO2:B film effectively blocked the leakage current at 200 degC with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 degC. The resulting mobilities were 1.25 and 39.3 cm(2)(V s) respectively. Finally, we realized a flexible In2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 degC, and it successfully operated a switching device with a mobility of 4.01 cm(2)(V s) Our results suggest that aqueous solution processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low cost, low temperature, and high performance flexible devices.
author_names: Jeehong Park

Young Bum Yoo

Keun Ho Lee

Woo Soon Jang

Jin Young Oh

Soo Sang Chae

Hyun Woo Lee

Sun Woong Han

Hong Koo Baik
title: Boron doped peroxo zirconium oxide dielectric for high performance, low temperature, solution processed indium oxide thin film transistor.
venue: ACS applied materials interfaces
year: 2013

abstract: In this paper, zirconium aluminum oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG DSC) X ray diffraction (XRD) X ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high bond energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal insulator metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al 3:1 and an annealing temperature of 500 degC, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 10 6 A/cm2@1MV/cm. Furthermore, the indium gallium zinc oxide thin film transistors (IGZO TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm2/Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 106 on/off ratio were achieved at an annealing temperature of 500 degC.
author_names: Zhihao Liang

Honglong Ning

Junlong Chen

Rihui Yao

Junbiao Peng
title: Zirconium Aluminum Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin Coating and the Application in Thin Film Transistor
year: 2020

abstract: Fin typed field effect transistor (FinFET) has considered a suitable device for low power and high performance applications. The incorporation of gate dielectric lanthanum doped zirconium oxide (LaZrO2) in the 14 nm silicon on insulator (SOI) FinFET not only enhanced effective carrier mobility but also diminished the short channel effects (SCEs) The FinFET embodiment with LaZrO2 has dwindled subthreshold swing (SS) reduced drain induced barrier lowering (DIBL) and raised on current to off current ratio as a contrast to SiO2 based FinFET. A remarkable enhancement of 1.18x, 11x, and 1.3x for transconductance (gm) early voltage (VEA) and an intrinsic gain (AV) respectively, have been investigated. Further, LaZrO2 based n FinFET and p FinFET devices have devised with equal dimensions. The improved noise margin of 0.375 V using a single fin FinFET based inverter circuit has proven the acceptance of this device in a circuit application.
author_names: Gurpurneet Kaur

Sandeep Singh Gill

Munish Rattan
title: Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter
year: 2020

abstract: In recent years, significant efforts have been devoted to the research and development of spin coated Al2O3 thin films, due to their large band gaps, high breakdown voltage and stability at high annealing temperature. However, as the alumina precursor has a large surface energy, substrates need to be treated by plasma before spin coating. Therefore, to avoid the expensive and process complicated plasma treatment, we incorporated zirconium nitrate into the aluminum nitrate solution to decrease the surface energy of the precursor which improve the spreadability. Then, the electrical performances and the surface morphologies of the films were measured. For comparison, the pure Al2O3 films with plasma treatments were also prepared. As a result, after low temperature annealing (200 degC) the relative dielectric constant of Zr AlOx spin coated thin film MIM (Metal Insulator Metal) devices can reach 12 and the leakage current density is not higher than 7.78 x 10 8 A/cm2 1 MV/cm when the concentration of zirconium nitrate is 0.05 mol/L. The Aluminum oxide film prepared by zirconium doping has higher stability and better electrical properties than the pure films with plasma treatments and high performance can be attained under low temperature annealing, which shows its potential application in printing and flexible electronic devices.
author_names: Yuewei Zhou

Zhihao Liang

Rihui Yao

Wencai Zuo

Yiping Wang

Tian Qiu

Honglong Ning

Junbiao Peng
title: Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation
year: 2020