Search query: "Comparison of properties of dielectric films deposited by various methods 

Related papers:

abstract: In this review paper, the physico chemical properties of various dielectric films used on semiconductor devices are compared according to their method of formation or deposition. The insulators which are discussed are silicon dioxide, phosphosilicate glass, silicon nitride, alumina, borosilicate glass, and other silicate glasses. The techniques of formation or deposition are thermal oxidation, CVD and pyrolytic deposition, plasma CVD, dc and rf reactive sputtering, rf sputtering, electron beam evaporation, and fused glass from sedimented powders.
author_names: William A Pliskin
title: Comparison of properties of dielectric films deposited by various methods
year: 1977

abstract: Detonation Nanodiamonds (DNDs) are known to have sp3 core, sp2 shell, small size (few nm) and are gaining importance as multi functional nanoparticles. Diverse methods have been used to form composites, containing detonation nanodiamonds (DNDs) embedded in conductive and dielectric matrices for various applications. Here we show a method, wherein DND ta C composite film, consisting of DNDs embedded in ta C matrix have been co deposited from the same cathode by pulsed filtered cathodic vacuum arc method. Transmission Electron Microscope analysis of these films revel the presence of DNDs embedded in the matrix of amorphous carbon. Raman spectroscopy indicates that the presence of DNDs does not adversely affect the sp3 content of DND ta C composite film compared to ta C film of same thickness. Nanoindentation and nanowear tests indicate that DND ta C composite films possess improved mechanical properties in comparison to ta C films of similar thickness.
author_names: A N Iyer

Jarkko Etula

Yanling Ge

Xuwen Liu

Jari Koskinen
title: Nanodiamond embedded ta C composite film by pulsed filtered vacuum arc deposition from a single target
year: 2016

abstract: For this proposed work, the comparison of structural, electrical, dielectric, and ferroelectric properties of HfO2 film deposited by plasma enhanced atomic layer deposition (PEALD) and radio frequency (RF) sputtering technique. Various characteristics has been obtained by fabricating the metal ferroelectric silicon (MFeS) and metal ferroelectric metal (MFeM) capacitors with different thickness of HfO2 (5, 10, 15, 20 nm) as a ferroelectric layer deposited on silicon and TiN/Silicon. The structural properties such as crystallographic phase, grain size with composition and refractive index of the deposited film were measured by X ray diffraction, Field emission scanning electron microscopy with energy dispersive spectroscopy (FESEM EDS) and multiple angle ellipsometry with the variation in annealing temperature. MFeS and MFeM structure were fabricated to obtain electrical and ferroelectric properties such as memory window, leakage current density, closed loop hysteresis, remnant polarization, charge, coercive field voltage, data retention time, endurance, and breakdown voltage of the deposited film. MFeS structure shows the memory window and flat band voltage shift of 4 V and 1.72 V, respectively for 10 nm PEALD deposited HfO2 layer. For the sputtered 15 nm film, maximum memory window of 4.32 V and leakage current density of 1.2 x 108 A/cm2 has been observed at the annealing temperature of 800 degC. Remnant polarization of 4 and 1.2 mC/cm2 obtained for PEALD and sputtered HfO2 film. The fabricated structure shows data retention for greater than 10 years and fatigue resistance for higher than 1012 read/write cycles. The reliability of the thin film was investigated by measuring the breakdown voltages of MFeS structure for different film thickness.
author_names: Rajesh Kumar Jha

Prashant Singh

Manish Goswami

B R Singh
title: Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1 T FeFET
venue: Journal of Materials Science: Materials in Electronics
year: 2019

abstract: Abstract(Ba0.5Sr0.5)TiO3 (BST) thin films were deposited on various substrates, such as LaAlO3(100) MgO(100) R plane sapphire[1012] and polycrystalline sapphire, by using RF magnetron sputtering to investigate the influence of annealing temperature on the dielectric properties and the tunability of the films. The BST thin films deposited on LaAlO3(100) exhibited a high tunability of 42 and a low dielectric loss of 0.004 due to the small differences in the lattice parameters and the thermal expansion coefficients between the BST films and the substrates. In contrast, the BST films deposited on a polycrystalline sapphire, exhibiting a relatively high mismatch factor, showed the tunability of ~24 and a dielectric loss of ~0.007. The BST thin films on LaAlO3(100) MgO(100) R plane sapphire[1012] and polycrystalline sapphire were annealed. The optimized annealing temperatures were found to be 950 degC, 1050 degC, 1100 degC, and 1150 degC, respectively. The difference in annealing temperature is likely due to the differences in the lattice parameters and the thermal expansion coefficients between the films and the substrates.
author_names: Chil Hyoung Lee

Y J Oh

Deuk Yong Lee

Doo Jin Choi
title: Influence of annealing temperature on the dielectric properties of BaSrTiO3 thin films deposited on various substrates
year: 2016

abstract: The paper presents the results of studying the structure, phase composition, relieph, and superconducting characteristics of oxygen containing thin films of magnesium diboride (MgB2)deposited on a dielectric substrate by magnetron sputtering of diboride magnesium targets. The possibility of forming films of varying degrees of crystalline perfection and phase composition in the process of precipitation and annealing is shown, depending on the conditions of deposition and annealing. In the films, it is possible to realize various combinations of the Abrikosov vortex pinning centers (in the places of fluctuations of the critical temperature of the superconducting transition (Tc type)and in the places of fluctuations in the mean free path (I type) whose origin and density are influenced by the conditions for the synthesis of films. It is shown that the deposited films consist of a superconducting matrix, which is a solid solution of oxygen in a lattice of magnesium diboride of the MgBxOy type; the density of the superconducting critical current of the films can reach 1.8 1011 8.2 1010 A/m2 at 10 K and 81010 2.81010 A/m2 at 20 K in fields of 0 1 T (when the external magnetic field is oriented perpendicular to the plane of the substrate)
author_names: Tetiana Prikhna

Anton V Shaternik

Victor Moshchil

Michael Eisterer

Volodymyr E Shaternik
title: Investigation of Properties of Nanostructured MgB2 Films Deposited by Magnetron Sputtering
venue: 2018 IEEE 8th International Conference Nanomaterials: Application Properties (NAP)
year: 2018

abstract: Abstract ZnO thin films were deposited using three processes e.g. thermal oxidation of metallic zinc (Zn) sol gel and RF sputtering. The structural, optical and electrical properties of ZnO films were investigated and compared systematically using X ray diffraction (XRD) X ray photoelectron spectroscopy (XPS) scanning electron microscope (SEM) Raman spectroscopy, photoluminescence (PL) and UV measurements. Stoichiometric and surface morphological difference was observed in the films deposited by three different techniques. Thermally oxidized ZnO films and sol gel derived ZnO film had naturally grown textured surface, while the surface of the sputtered ZnO film was relatively smooth. The electrical transport properties of the Pd/ZnO Schottky contact were studied by using microprobe arrangement. The values of ideality factor and barrier height were found to be significantly good for Schottky contact of thermally oxidized ZnO thin film. The study demonstrates that Pd/ZnO Schottky type contact fabricated by a simple and inexpensive growth technique can be used as a substitute of conventional Schottky diodes for electronic and optoelectronic applications.
author_names: Shaivalini Singh

P Chakrabarti
title: Comparison of the structural and optical properties of ZnO thin films deposited by three different methods for optoelectronic applications
year: 2013

abstract: A highly responsive resistive type humidity sensor is fabricated from porous aluminium doped ZnO (Al:ZnO, AZO) thin films deposited by using jet atomizer spray pyrolysis technique. The deposited thin films are calcined at various temperatures, ranging from 450 to 650 degC, to improve the crystallinity, electrical and optical properties. Electrical resistivity of the films is measured by Van der Pauw technique. Lowest resistivity of 13 O*cm is obtained for 3 at. AZO samples calcined at 500 degC. Humidity sensing properties like responsivity, sensitivity, repeatability, response time and recovery time of the AZO samples are investigated at room temperature in the range of 10 90% of relative humidity (RH) Among all the samples, 5 at. AZO thin films show the highest responsivity of 733% at 90% RH. In contrast to other ZnO based sensors, it is found that the resistance of the AZO sensors, prepared in our method, increases with the increase of relative humidity. A sensing mechanism of the AZO and ZnO thin films is proposed to explain the water adsorption technique and the cause of increase in resistance of the sensors during water adsorption.
author_names: Soumalya Kundu

Rahul Majumder

Ria Ghosh

Manish Pal Chowdhury
title: Superior positive relative humidity sensing properties of porous nanostructured Al:ZnO thin films deposited by jet atomizer spray pyrolysis technique
venue: Journal of Materials Science: Materials in Electronics
year: 2019

abstract: Copper bismuth sulfide thin films were deposited at 200 degC, 300 degC, 400 degC and 500 degC on the glass substrates by electron beam evaporation method. X ray diffraction study revealed that the copper bismuth sulfide films of single and mixed phases were formed as a function of substrate temperatures. Substrate temperature of 300 degC and 400 degC formed single phase Cu4Bi4S9 and Cu4Bi5S10 films respectively whereas substrate temperature of 500 degC formed mixed phases of Cu4Bi4S9 and Cu4Bi5S10 film. Crystallite size, dislocation density and microstrain of the films were modified by the various substrate temperatures. Surface morphology of the film Cu4Bi5S10 deposited at 400 degC examined by scanning electron microscopy showed the distribution of spherical shaped particles on the film surface. The presence of copper, bismuth and sulfur elements in the deposited films was confirmed using energy dispersive spectral studies. The calculated direct optical band gap energy of the films deposited at different substrate temperature varied from 1.47 to 1.64 eV and the absorption coefficient is in the order of 106 cm 1.
author_names: P Bhuvaneswari

K Ramamurthi

Ramraj Ramesh Babu
title: Effect of substrate temperature on the structural, morphological and optical properties of copper bismuth sulfide thin films deposited by electron beam evaporation method
venue: Journal of Materials Science: Materials in Electronics
year: 2018

abstract: Abstract A comparison of mechanical properties of amorphous silicon nitride thin films deposited with various techniques used for microelectronic applications was conducted. Nitride films with thicknesses less than 80 nm were deposited on (0 0 1) oriented silicon wafers by using various methods: low pressure chemical vapor deposition (LPCVD) rapid thermal CVD (RTCVD) atomic layer deposition (ALD) and plasma enhanced CVD (PECVD) The wafer curvature method was used to show that the as deposited LPCVD, RTCVD and ALD films exhibited tensile residual stresses that decreased with silicon richness. In contrast, the stress of the PECVD as deposited layers ranged from tensile to ultra compressive, depending on the exposure to high plasma power and ion bombardment during growth. After high temperature annealing, the LPCVD, RTCVD and ALD nitride stresses were almost unchanged, indicating that these films/substrate systems have significant thermal mechanical stability. In contrast, it was observed that, regardless of the initial stress, the annealed PECVD films developed tensile stress after high temperature treatment, with the same dependence of stress on refractive index as was found with the other deposition techniques. The Young's moduli, measured by performing nano indentation on 200 nm thick nitride layers, were found for most samples to be correlated with film density.
author_names: P Morin

Gaetan Raymond

Daniel Benoit

P Maury

R Beneyton
title: A comparison of the mechanical stability of silicon nitride films deposited with various techniques
year: 2012

abstract: Abstract For the first time, unfocused Chitosan nano ZnO composite film was prepared by a simple one pot procedure. The novel composite materials were ably characterized by various physico chemical methods. Dielectric and conductivity features of composite materials were analysed. The result showed that both dielectric constant and conductivity values were improved when nano ZnO was incorporated. The potential applicability of composite films to perform as an efficient antimicrobial packaging material was evaluated. Antimicrobial analysis showed that all composite films exhibited enhanced antimicrobial efficacy as compared to pure chitosan film and it is linearly related to the amount of ZnO particles in the matrix.
author_names: P Mujeeb Rahman

V M Abdul Mujeeb

K Muraleedharan

Steni K Thomas
title: Chitosan/nano ZnO composite films: Enhanced mechanical, antimicrobial and dielectric properties
year: 2018