Search query: 520nm semiconductor laser

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abstract: In recent years, optical chaos as a new research hotspot has attracted extensive attention. In order to improve the performance of chaos based applications, we need to study the numerical value of its output chaotic signal. In this contribution, the effects of injection parameters, i.e. the frequency detuning and injection strength, on time delay signature (TDS) concealment and bandwidth enhancement of the three cascade coupled semiconductor ring lasers (SRLs) are numerically investigated. The results show that, under the proper conditions, both the TDS elimination and bandwidth enhancement can be reached in the third SRL of cascade coupled system.
author_names: Penghua Mu

Junyan Tao
title: Numerical study of the time delay signature concealment and bandwidth enhancement in semiconductor ring laser
venue: International Conference on Laser, Optics and Optoelectronic Technology
year: 2021

abstract: Graphene has emerged excellent electronic, optical and mechanical properties as a layered semiconductor, and opening its bandgap through modulation further expands its practical applications. Direct laser writing has been widely used in material modulation, owing to its high precision, convenient local processing capacity. As an important factor, laser parameters play a crucial role in the ablation of materials. In this paper, the influence of laser parameters on the ablation was investigated by adjusting the energy and numbers of laser pulse. The saturation of ablation was found in the case of 500 pulses, and the ablation threshold of graphene paper was calculated to be 0.2 J/cm2. The results above have a positive effect on the modulation and the further devices fabrication of graphene paper.
author_names: ManLou Ye

Baoshan Guo
title: Study on the ablation of layered semiconductor material by femtosecond laser
venue: International Conference on Laser, Optics and Optoelectronic Technology
year: 2021

abstract: Abstract We demonstrate a diode pumped femtosecond Yb:CaGdAlO4 (Yb:CALGO) laser with a semiconductor saturable absorber mirror (SESAM) for stable mode locking operation. A perfect beam profile is measured under 10 W output power with $M_{x}{2} 1.017 and $M_{y}{2} 1.016 in the horizontal and vertical directions, respectively. At the repetition rate of 71.66 MHz, the optical pulse duration is 247 fs and the pulse energy is 140 nJ at the central wavelength of 1041 nm, corresponding to a peak power of 0.56 MW. In addition, we also generate continuous wave (CW) power of more than 15 W with TEM00 mode, corresponding to an optical to optical efficiency of 44.1%
author_names: Jinfang Yang

Jiajun Song

Renchong Lv

Xianzhi Wang

Zhiyi Wei
title: Diode pumped 10 W femtosecond Yb:CALGO laser with high beam quality
venue: High Power Laser Science and Engineering
year: 2021

abstract: The current global situation has caused semiconductor fabless business organizations to be constantly under multiple constraints, such as forecasted customer demand changes, business flexibility needs, cash preservation and uncertain global macro economic conditions are leading to a laser sharp focus within supporting operations groups to manage the stakeholder expectations within a defined program. Focusing on supporting organization, this paper aims to demonstrate how to integrate the supporting operations organization to manage, address, align and prioritize urgencies across all internal stakeholders. This paper discusses key mechanisms to improve stakeholder alignment within the organization, and specifically addressing alignment, governance of Business Lines (BL) to support the group's strategies, and interfacing with external supplier partners. The application of these mechanisms have shown practical improvements in stakeholder expectations management, thereby resulting in speedier escalation resolutions with reference to wafer capacity, supply continuity and pricing.
author_names: Salvin Macwan

Josephine Quek

Scott Rogers

Marc De Zwart
title: Fabless Semiconductor Challenge Internal Stakeholder Alignment Improvements
venue: 2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
year: 2021

abstract: In complex integrated circuits, transistor elements are essential circuit elements that determine the overall performance of the semiconductor device. Improvements in the performance of transistor devices leads to differently doped regions that are formed in the semiconductor substrate. For high performance transistors, very shallow dopant junctions are in contact with the source/drain regions and partially beneath the gate electrode in the semiconductor substrate. Activation of the dopants in these junctions, as well as dopants in deep source/drain regions, can be achieved using a very fast laser heating process known as laser spike annealing (LSA).The Laser Spike Anneal (LSA) process has stringent quality requirements. On the one hand, temperature stable annealing must be guaranteed, which requires stable operation of the laser (e.g. energy density, beam profile) Accurate positioning of the wafer in the LSA process tool is also important. Should the wafer be misaligned, the laser may go beyond the edge die and make contact with the bevel, resulting in a high risk of wafer breakage. In addition, correct and stable alignment enables annealing with significantly smaller edge exclusions.The integrated SURFmonitor(tm) feature of the KLA Surfscan(r) SP5, a defect inspection system for blanket wafers, was utilized successfully to highlight the variation of the LSA process performance.The study will focus on ensuring correct positioning of the wafer during the anneal process. Monitoring the stability of the annealing process is well known and is only mentioned here in passing.
author_names: Karen M Wendt

John N Newby
title: The use of cross section haze measurements to monitor Laser Spike Anneal (LSA) stage alignment
venue: 2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
year: 2021

abstract: In this study, the imaging of metal ions and nanoparticles deposited on a structured silicon surface was investigated using a laser ablation inductively coupled plasma mass spectrometry (LA ICP MS) For application, 8 <inline formula> <tex math notation="LaTeX"\times /tex math>/inline formula> 8 Petri dish pillars, each with a diameter of 250 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> and height of 300 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> were constructed on a silicon wafer. The etched pillar surface took a droplet of approximately 4.3 nL aqueous solution from a capillary tip through the surface liquid attraction. The dissolved materials were found at the intersecting edge of pillar bottom after evaporation, and their positions were matched with the peaks of elements in the mass spectrum for imaging. Results suggest that the trace contaminants in the cleaning solution are gathered at the intersecting edges of the patterned wafer, and the multi elemental images of the contaminants can be successfully obtained using LA ICP MS.
author_names: H B Lim

Katherine M McLachlin

Ciaran O'Connor

Daniel R Wiederin

Hyuck Ki Hong
title: Imaging of Metal Ions and Nanoparticles on Structured Silicon Surface Using Laser Ablation Inductively Coupled Plasma Mass Spectrometer for Contamination Control in Semiconductor Manufacturing Process
venue: IEEE Transactions on Semiconductor Manufacturing
year: 2021

abstract: Abstract Narrowband microwave generation with tuneable frequency is demonstrated by illuminating a photoconductive semiconductor switch (PCSS) with a burst mode fibre laser. The whole system is composed of a high power linearly polarized burst mode pulsed fibre laser and a linear state PCSS. To obtain a high performance microwave signal, a desired envelope of burst is necessary and a pulse pre compensation technique is adopted to avoid envelope distortion induced by the gain saturation effect. Resulting from the technique, homogenous peak power distribution in each burst is ensured. The maximum energy of the laser burst pulse reaches 200 mJ with a burst duration of 100 ns at the average power of 10 W, corresponding to a peak power of 4 kW. When the PCSS is illuminated by the burst mode fibre laser, narrowband microwave generation with tuneable frequency (0.80 1.12 GHz) is obtained with a power up to 300 W. To the best of the authors' knowledge, it is the first demonstration of frequency tuneable narrowband microwave generation based on a fibre laser. The high power burst mode fibre laser reported here has great potential for generating high power arbitrary microwave signals for a great deal of applicable demands such as smart adaptive radar and intelligent high power microwave systems.
author_names: Xuan He

Bin Zhang

Shuailin Liu

Jinmei Yao

Qilin Wu

Yu-xin Zhao

Tao Xun

Jing Hou
title: High power linear polarization burst mode all fibre laser and generation of frequency adjustable microwave signal
venue: High Power Laser Science and Engineering
year: 2021

abstract: Various forms of light therapy have been practiced around the world for many years. Among them the laser therapy has experienced a prosperous development in recent years. More and more laser equipment has been used in this field. In this study, we present an optical pumped vertical external cavity surface emitting laser (OP VECSEL) system using semiconductor gain chip as the lasering material. Through carefully design of the semiconductor gain chip structure, the fundamental and frequency doubled laser emitting wavelength can be set to the range of 1040 1160nm and 520nm 580nm which is the mainly laser tissue interact wavelength range for laser therapy. In a flat concave short cavity laser assembly test, the maximum fundamental frequency output power of the system is 1.6W using a 2% output coupler. Through a frequency doubling crystal, the continuous output power of the yellow green light can achieve 24mW.
author_names: Jonathan Li

Chao Wang

Xin Wei

Chuanchuan Li
title: 530 580nm optical pumped vertical external cavity surface emitting lasers for laser therapy
venue: Applied Optics and Photonics China
year: 2020

abstract: We present the study on the dynamics of a semiconductor laser with a tunable Fabry Perot filter and a ring single mode fiber based long cavity. Theoretically and experimentally, we analyse dynamical regimes of the laser in various operation regimes, including stable and chaotic dynamics and the formation of coherent structures. The laser coherence build up is studied during the turn on, as well as different scenarios of coherence deterioration in such lasers are examined.
author_names: Svetlana Slepneva

Amy Roche

U Gouda

Alexander Pimenov

Anton Kovalev

M Marconi

M Giudici

Evgeny A Viktorov

Andrei G Vladimirov

Guillaume Huyet
title: Nonlinear Dynamics in a Long Cavity Semiconductor Laser
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020

abstract: We demonstrate generation of "droplet" Bessel beams using semiconductor laser and an axicon with rounded tip. Interference of Bessel and Gaussian wave fronts leads to cancellation of side lobes of Bessel beam.
author_names: S H Abdulrazak

D V Chistyakov

Sergey N Losev

V Yu Myl'nikov

Yu M Zadiranov

N G Deryagin

Vladislav V Dudelev

Vladimir I Kuchinskii

Grigorii S Sokolovskii
title: Cancellation of side lobes in "droplet" Bessel beams generated with semiconductor laser
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020