Search query: InGaAsP 915nm laser

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abstract: The power conversion efficiencies of single junction III V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for wireless power transmission were investigated by varying the wavelength and incident power of a laser diode. The GaAs solar cell exhibited the highest conversion efficiency of 52.7% at a laser wavelength of 824 nm and a laser beam irradiance of 4 suns. For each solar cell, the conversion efficiency peaked at an optimal incident laser wavelength and this effect was examined in detail. It was found that the conversion efficiency is maximal when the laser photon energy is 80 100 meV higher than the bandgap of the semiconductor material.
author_names: Ryota Jomen

Fumiaki Tanaka

Toshiki Akiba

Mitsutaka Ikeda

Kosei Kiryu

Mikiya Matsushita

Hiroyasu Maenaka

Pan Dai

Shulong Lu

Shiro Uchida
title: Conversion efficiencies of single junction III V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission
year: 2018

abstract: We demonstrate efficient generation of terahertz (THz) frequency radiation by pulsed excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches fabricated using Fe doped InGaAsP wafers, grown by metal organic chemical vapor deposition (MOCVD) Compared to our previous studies of Fe doped InGaAs wafers, Fe:InGaAsP wafers exhibited five times greater dark resistivity to give a value of 10 kO cm, and Fe:InGaAsP PC switches produced five times higher THz power emission. The effect of Fe doping concentration (between 1E16 and 1.5E17 cm 3) on optical light absorption (between 800 and 1600 nm) on resistivity, and on THz emission is also discussed.
author_names: O Hatem

Joshua R Freeman

John E Cunningham

P J Cannard

Michael James Robertson

Edmund H Linfield

A G Davies

David Graham Moodie
title: Generation of Terahertz Radiation from Fe doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation
year: 2016

abstract: 915nm high power and high reliability single emitter laser diodes based on Asymmetric Decoupled Confinement Heterostructure (ADCH) are demonstrated. Advantage of ADCH is that it can optimize active layer confinement and confinement ratio of p to n doped layer (p/n) independently, to manage large effective spot size and low internal loss without any penalty in carrier confinement. 4mm cavity, 100m wide stripe LDs with large effective spot size of 1.5m demonstrates record high Catastrophic optical damage (COD) free operation over 42W output. Accelerated aging tests are conducted for 325 devices in total with 1.8 million device hours. Mean time to failure of random failure mode is estimated to be 1.1 million hours for 12W at room temperature.
author_names: Yuji Yamagata

Yumi Yamada

Masanori Muto

Syunta Sato

Ryozaburo Nogawa

Akira Sakamoto

Masayuki Yamaguchi
title: 915nm high power broad area laser diodes with ultra small optical confinement based on Asymmetric Decoupled Confinement Heterostructure (ADCH)
venue: Photonics West Lasers and Applications in Science and Engineering
year: 2015

abstract: A buried ridge stripe (BRS) structure InGaAsP Si hybrid laser based on selective area metal bonding (SAMB) method is demonstrated. This novel hybrid laser structure combines the SAMB method's advantage of low bonding requirements and great flexibility and the BRS lasers' low threshold, high thermal performance, and good optical field and carrier confinement. The 300 \mu m long hybrid laser has a threshold current of 14 mA and a maximum single facet output power of 5.4 mW at room temperature, with a slope efficiency of 0.17 W/A. The laser has a characteristic temperature of 50 K, with continuous wave operation at temperature >50 degC.
author_names: Lijun Yuan

Li Tao

Weixi Chen

Yanping Li

Dan Lu

Song Liang

Hongyan Yu

Guangzhao Ran

Jiao-qing Pan

Wei Wang
title: A Buried Ridge Stripe Structure InGaAsP Si Hybrid Laser
venue: IEEE Photonics Technology Letters
year: 2015

abstract: A 1.55 <formula formulatype="inline"<tex Notation="TeX"\mu{\rm m}/tex>/formula> InGaAsP Si hybrid laser operating at 10<formula formulatype="inline"<tex Notation="TeX"\circ}\rm C}/tex>/formula> under continuous wave operation is fabricated using a selective area metal bonding method with AuGeNi/Au on InGaAsP gain structure as both cathode and bonding metal and AuSn on silicon on insulator (SOI) as bonding metal. The maximum single facet output power is 9 mW. The slope efficiency of the hybrid laser is 0.04 W/A, four times that of the laser before bonding. A semi insulating InP:Fe buried heterostructure laser is flip chip bonded onto an SOI waveguide. The light generated in the active area is evanescently coupled into the silicon waveguide. The simplicity and flexibility of the fabrication process and high yield make the hybrid laser a promising light source.
author_names: Lijun Yuan

Li Tao

Hongyan Yu

Weixi Chen

Dan Lu

Yanping Li

Guangzhao Ran

Jiao-qing Pan
title: Hybrid InGaAsP Si Evanescent Laser by Selective Area Metal Bonding Method
venue: IEEE Photonics Technology Letters
year: 2013

abstract: A passively mode locked extended cavity quantum well ring laser at 1.58 mm with repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP based active passive integration technology. The 33mm long cavity contains gain, saturable absorption and passive waveguide sections as well as a phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive mode locked operation and with wavelength tuning of the laser modes are experimentally demonstrated. This laser is the lowest reported repetition rate for a monolithically integrated ring laser.
author_names: Sylwester Latkowski

V Moskalenko

Saeed Tahvili

Meint Smit

Erwin Bente

Luc M Augustin
title: Monolithic 2.5 GHz Quantum Well InGaAsP Extended Cavity Modelocked Ring Laser with an Integrated Phase Modulator
venue: 2014 International Semiconductor Laser Conference
year: 2014

author_names: Mohammad Nasir Uddin

Takaaki Kizu

Yasuhiro Hinokuma

Kazuhiro Tanabe

Akio Tajima

Kazutoshi Kato

Kiichi Hamamoto
title: Split pump region in 1.55 mm InGaAsP/InGaAsP asymmetric active multi mode interferometer laser diode for improved modulation bandwidth
venue: IEICE Trans. Electron.
year: 2014

abstract: A 1.5 m.m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light coupling material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip chip bonded onto a patterned silicon on insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 kA/cm2 at 210 K. Due to the advantages of post bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source.
author_names: Tao Hong

Yan-ping Li

Wei-xi Chen

Guangzhao Ran

Guogang Qin

Hongliang Zhu

Song Liang

Y Wang

Jiao-qing Pan

Wei Wang
title: Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light Coupling Material
venue: IEEE Photonics Technology Letters
year: 2012

abstract: In spite of many years of research, the quantum well intermixing technique has not been able to deliver multibandgap III V semiconductor wafers at highly attractive costs. We report that UV laser irradiation of InGaAs/InGaAsP/InP quantum well (QW) microstructures in deionized water and rapid thermal annealing (RTA) allows achieving, mask free, wafers with blueshifted photoluminescence (PL) emission of intensity exceeding almost 10x that of the RTA only wafers. Our calculations indicate that a ~40 nm thick InOx layer formed on top of the investigated microstructure induces compressive strain in the QW region and leads to this record high enhanced PL amplitude. (Some figures may appear in colour only in the online journal) The selective area control of the bandgap of semiconductor wafers is one of the key factors in the development of photonic integrated circuits (PICs) (Estrella et al 2012) Post growth quantum well intermixing (QWI) has been reported as a relatively simple and potentially cost effective method allowing area selective bandgap tuning of Si/Si1 xGex (Dubowski et al 1999) and III V quantum well (QW) wafers (Skogen et al 2005, Genest et al 2008, Xu and Mei 2009,
author_names: Neng Liu

Suzie Poulin

Jan J Dubowski
title: Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing
year: 2013

abstract: Large bandgap blueshifts in III V quantum semiconductor microstructures are achievable with UV laser induced quantum well intermixing (QWI) We report on the application of the UV laser QWI technique to investigate bandgap engineering of a compressively strained InGaAsP/InP quantum well laser microstructure. The attractive performance of the technique, determined by the ability of a laser to generate point defects, has been demonstrated with bandgap blueshifts reaching 142 nm, with enhancement of photoluminescence intensity. We have also investigated this technique for post growth wafer level processing designed for the fabrication of laser diodes.
author_names: Mohammad Kaleem

Xin Zhang

Yuan Zhuang

Jian-jun He

Neng Liu

Jan J Dubowski
title: UV laser induced selective area bandgap engineering for fabrication of InGaAsP/InP laser devices
year: 2013