Search query: Active graphene–silicon hybrid diode for terahertz waves

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abstract: Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.
author_names: Quan Li

Zhen Tian

Xueqian Zhang

Ranjan Singh

Liang Liang Du

Jianqiang Gu

Jiaguang Han

Weili Zhang
title: Active graphene silicon hybrid diode for terahertz waves
venue: Nature communications
year: 2015

abstract: With simultaneous optical and electrical excitations, we experimentally demonstrate an active modulation of transmitted terahertz waves through a graphene silicon hybrid structure. A large transmission modulation of 83% was observed. Meanwhile, a "diode" behavior was found in such a structure, where terahertz waves transmits when biased with a positive voltage while attenuates under a low negative voltage.
author_names: Quan Li

Xueqian Zhang

Zhen Tian

Ranjan Singh

Liang Liang Du

Jianqiang Gu

Chunmei Ouyang

Jiaguang Han

Weili Zhang
title: Active terahertz modulations based on graphene silicon hybrid structures
venue: 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW THz)
year: 2015

abstract: Metamaterials offer enormous opportunities and unprecedented functionalities to manipulate electromagnetic waves enabling promising applications such as invisibility cloaking, superfocusing and subwavelength confinement. The exotic electromagnetic behavior of metamaterials was dramatically empowered by dynamic control through incorporation of active media. A prominent example is a graphene metamaterial an integration of a two dimensional monolayer graphene with a planar metasurface, where the unique optical and electronic properties of graphene is inherited by the metamaterial, thus opening up fascinating possibilities in electromagnetic wave control. Here, through a combination of continuous wave (CW) optical illumination and electrical gating, we demonstrate a giant active modulation of terahertz waves in a graphene silicon hybrid metamaterial at extremely low bias voltages. The highly tunable characteristics of the graphene metamaterial device under electrical bias and optical illumination open up new avenues for graphene based high performance integrated active photonic devices compatible with the silicon technology.
author_names: Quan Li

Zhen Tian

Xueqian Zhang

Ningning Xu

Ranjan Singh

Jianqiang Gu

Peng Lv

Lin-Bao Luo

Shuang Zhang

Jiaguang Han

Weili Zhang
title: Dual control of active graphene silicon hybrid metamaterial devices
year: 2015

abstract: Broadband terahertz (THz) impedance matching is important for both spectral resolution improvement and THz anti radar technology. Herein, graphene silicon hybrid structure has been proposed for active broadband THz wave impedance matching with optical tunability. The main transmission pulse measured in the time domain indicates a modulation depth as high as 92.7% totally from the graphene silicon interface. The interface reflection from the graphene silicon junction implies that an impedance matching condition can be actively achieved by optical doping. To reveal the mechanism, we propose a graphene silicon heterojunction model, which gives a full consideration of both the THz conductivity of graphene and the loss in doped junction layer. The theory fits well with the experimental results. This work proves active THz wave manipulation by junction effect and paves the way for active anti reflection coating for THz components.
author_names: Wanyi Du

Yixuan Zhou

Zehan Yao

Yuanyuan Huang

Chuan He

Longhui Zhang

Yuhang He

Lipeng Zhu

Xinlong Xu
title: Active broadband terahertz wave impedance matching based on optically doped graphene silicon heterojunction.
venue: Nanotechnology
year: 2019

abstract: A combination of continuous wave optical illumination and electrical gating leads to a giant active modulation ~61% of terahertz waves in a graphene silicon hybrid metamaterial at extremely low gate bias voltages (1 V) The highly tunable characteristics of the graphene metamaterial device under electrical bias and optical illumination open up new avenues for graphene based high performance integrated active devices compatible with the silicon technology.
author_names: Quan Li

Zhen Tian

Xueqian Zhang

Ningning Xu

Ranjan Singh

Jianqiang Gu

Jiaguang Han

Shuang Zhang

Weili Zhang
title: Active graphene silicon hybrid metamaterial devices
venue: 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW THz)
year: 2014

abstract: Tunable modulations of terahertz waves in a graphene/ferroelectric layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene based high performance integrated active photonic devices compatible with the silicon technology.
author_names: Ran Jiang

Zheng-Ran Wu

Zuyin Han

Hyung-Suk Jung
title: HfO 2 based ferroelectric modulator of terahertz waves with graphene metamaterial*
year: 2016

abstract: Compact heterodyne receivers operating in the terahertz range are needed for earth observation instruments, space science missions (e.g. ESA's "Jupiter icy moons explorer JUICE" and in the millimeter wave region for ground based applications such as security scanners. Existing terahertz heterodyne receivers are usually bulky due to complex hybrid integration and there is a strong need for a terahertz monolithic integration circuit "TMIC" platform that allows for higher circuit functionality, ease of assembly, and low loss at terahertz frequencies. Moreover, this part of the electromagnetic spectrum, where optical and microwave techniques meet, call for an integration scheme that can support both active THz electronics photonics. A possible solution is heterogeneous integration of THz devices (III V, graphene) on a silicon carrier, which also allows for advanced micromaching of passive components and interconnects such as waveguides and antennas. Progress on graphene THz detectors and integrated diode circuits for terahertz applications will be presented.
author_names: Jan Stake
title: Graphene electronics and integrated III V diode circuits for terahertz applications
year: 2015

abstract: A hybrid polymer/InP dual DBR laser at 1.5mm is presented as an optical source for heterodyne generation and detection of cw THz signals. The device consists of an active InP chip as an active gain element, end fire coupled to a polymer chip with thermo optically tunable phase shifters and Bragg gratings. Mode hop free tuning of 1.1 THz has been achieved on the single DBR lasers. The usability of such sources for heterodyne cw THz generation has been demonstrated in a coherent cw THz setup. Scans in the THz range show a resolution of the H2O absorption lines comparable to the results achievable with commercially available external cavity diode lasers.
author_names: David de Felipe

Magnus Happach

Simon Nellen

Walter Brinker

Moritz Kleinert

Crispin Zawadzki

Martin G Mohrle

Norbert Keil

Thorsten Gobel

Klaus Petermann

Martin Schell
title: Hybrid polymer/InP dual DBR laser for 1.5 mm continuous wave terahertz systems
venue: SPIE OPTO
year: 2016

abstract: Metasurfaces provide great flexibility in tailoring light beams and reveal unprecedented prospects on novel functional components. However, techniques to dynamically control and manipulate the properties of metasurfaces are lagging behind. Here, for the first time to our knowledge, we present an active wave deflector made from a metasurface with phase discontinuities. The active metasurface is capable of delivering efficient real time control and amplitude manipulation of broadband anomalous diffraction in the terahertz regime. The device consists of complementary C shape split ring resonator elements fabricated on a doped semiconductor substrate. Due to the Schottky diode effect formed by the hybrid metal semiconductor, the real time conductivity of the doped semiconductor substrate is modified by applying an external voltage bias, thereby effectively manipulating the intensity of the anomalous deflected terahertz wave. A modulation depth of up to 46% was achieved, while the characteristics of broadband frequency responses and constant deflected angles were well maintained during the modulation process. The modulation speed of diffraction amplitude reaches several kilohertz, limited by the capacitance and resistance of the depletion region. The scheme proposed here opens up a novel approach to develop tunable metasurfaces.
author_names: Xiaoqiang Su

Chunmei Ouyang

Ningning Xu

Wei Cao

Xin Wei

Guofeng Song

Jianqiang Gu

Zhen Tian

John F O'Hara

Jiaguang Han

Weili Zhang
title: Active metasurface terahertz deflector with phase discontinuities.
venue: Optics express
year: 2015

abstract: Abstract: Compact heterodyne receivers operating in the terahertz range are needed for earth observation instruments, space science missions (e.g. ESA's "Jupiter icy moons explorer JUICE" and in the millimeter wave region for ground based applications such as security scanners. Existing terahertz heterodyne receivers are usually bulky due to complex hybrid integration and there is a strong need for a terahertz monolithic integration circuit "TMIC" platform that allows for higher circuit functionality, ease of assembly, and low loss at terahertz frequencies. Moreover, this part of the electromagnetic spectrum, where optical and microwave techniques meet, call for an integration scheme that can support both active THz electronics photonics. A possible solution is heterogeneous integration of THz devices (III V, graphene) on a silicon carrier, which also allows for advanced micromaching of passive components and interconnects such as waveguides and antennas. This talk provides an overview of research on integrated diode circuits for terahertz applications. Progress on heterogeneous integration of HBV multipliers and Schottky diode mixers on silicon substrates (SOI) will be presented.
author_names: Josip Vukusic

Aleksandra Malko

Tomas Bryllert

Omid Habibpour

Audrey Rose Zak

Michael A Andersson

Jan Stake
title: Heterogeneous integration of terahertz electronics
year: 2015