Search query: Emerging device applications for semiconducting  two-dimensional transition metal dichalcogenides

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abstract: With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
author_names: Deep Jariwala

Vinod K Sangwan

Lincoln J Lauhon

Tobin J Marks

Mark C Hersam
title: Emerging device applications for semiconducting two dimensional transition metal dichalcogenides.
venue: ACS nano
year: 2014

abstract: The emerging system of atomically thin materials with only a few atomic layer thickness opens the new research fields of optical science and device applications. The optically generated bound electron hole pairs (excitons and charged excitons) contribute to the novel optical properties in semiconducting atomically thin materials of monolayer transition metal dichalcogenides called as "beyond graphene" We describe our recent studies on novel optical science and application in atomically thin semiconducting transition metal dichalcogenides.
author_names: Kazunaii Matsuda
title: Optical properties and application of atomically thin two dimensional materials
venue: 2017 24th International Workshop on Active Matrix Flatpanel Displays and Devices (AM FPD)
year: 2017

abstract: Recent experimental efforts in investigating low dimensional nanomaterials have spanned significantly beyond carbon nanotube (CNT) and graphene, which are often considered hallmarks of one and two dimensional (1&2D) nanostructures. Emerging layered nanomaterials, such as transition metal dichalcogenides (TMDC) and black phosphorus (P) have enabled new device functions and potential applications thanks to their intriguing material properties unavailable in CNT and graphene. In particular, nanoelectromechanical systems (NEMS) based on these new nanostructures exhibit new and interesting device properties. This paper describes the recent progresses in exploring and engineering atomically thin semiconducting crystals into a new class of two dimensional nanoelectromechanical systems, which hold promises for building novel nanoscale transducers. Exploration of resonant NEMS based on molybdenum disulfide (MoS2) reveals in these new nanoscale systems very broad dynamic range, rich nonlinear dynamics, and outstanding electrical tunability. Further, recent investigations show that black P NEMS offer the unique opportunity for harnessing the strong mechanical anisotropy in this nanocrystal composed of corrugated atomic sheets, demonstrating potential towards new device functions and applications that are unavailable to CNT and graphene based devices and systems.
author_names: Max Zenghui Wang
title: Nanoelectromechanical systems based on low dimensional nanomaterials: Beyond carbon nanotube and graphene nanomechanical resonators a brief review
venue: 2016 IEEE 16th International Conference on Nanotechnology (IEEE NANO)
year: 2016

abstract: Two dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal semiconductor and dielectric semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.
author_names: Christopher R Ryder

Joshua D Wood

Spencer A Wells

Mark C Hersam
title: Chemically Tailoring Semiconducting Two Dimensional Transition Metal Dichalcogenides and Black Phosphorus.
venue: ACS nano
year: 2016

abstract: Abstract It is known that only in plane piezoelectricity exists in pristine two dimensional (2D) transition metal dichalcogenides (TMDs) In this study, we demonstrate the creation of strong out of plane piezoelectricity in semiconducting 2H MoTe2 flakes by an artificial atomic scale symmetry breaking. The atomic scale symmetry breaking associated with flexoelectricity was realized through Te vacancy formation by a simple thermal annealing of the 2D TMDs. The strong out of plane piezoelectricity was experimentally measured and confirmed by theoretical calculations. This strategy of atomic scale symmetry modulation for out of plane piezoelectricity can be easily applied to a broader class of 2D TMD materials that have not been used for applications with out of plane piezoelectricity. Accordingly, it can stimulate the expansion of practical energy device applications with 2D TMD materials.
author_names: Sera Kim

Daehee Seol
title: Atomic scale symmetry breaking for out of plane piezoelectricity in two dimensional transition metal dichalcogenides
venue: Nano Energy
year: 2019

abstract: Two dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs) offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well established doping techniques (e.g. ion implantation and diffusion) which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non covalent interactions. Such research endeavours enabled not only the tuning of the charge carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically thin TMDs in the form of substrate supported or solution dispersed nanosheets and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.
author_names: Simone Bertolazzi

Marco Gobbi

Yuda Zhao

Claudia Backes

Paolo Samori
title: Molecular chemistry approaches for tuning the properties of two dimensional transition metal dichalcogenides.
venue: Chemical Society reviews
year: 2018

abstract: Abstract Transition metal dichalcogenides (TMDCs) have attracted significant attention for their great potential in nano energy. TMDC layered materials represent a diverse and largely untapped source of 2D systems. High quality TMDC layers with an appropriate size, variable thickness, superior electronic and optical properties can be produced by the exfoliation or vapor phase deposition method. Semiconducting TMDC monolayers have been demonstrated feasible for various energy related applications, where their electronic properties and uniquely high surface areas offer opportunities for various applications such as nano generators, green electronics, electrocatalytic hydrogen generation and energy storage. In this review, we start from the structure, properties and preparation, followed by detailed discussions on the development of TMDC based nano energy applications.
author_names: Henan Li

Yumeng Shi

Ming-Hui Chiu

Lain-Jong Li
title: Emerging energy applications of two dimensional layered transition metal dichalcogenides
year: 2015

abstract: The recent exploration of semiconducting two dimensional (2D) transition metal dichalcogenides (TMDs) with atomic thickness has taken both the scientific and technological communities by storm. Extensively investigated TMD that are accessible by large scale synthetic methods materials are remarkably stable, such as MoS2 and WSe2 They allow superior gate control due to their 2D nature and favorable electronic transport properties, thus suggesting a bright future for digital and RF electronics. In this review, the latest developments in the controlled synthesis of large scale TMDs are firstly introduced by discussing various approaches. The major obstacles that must be overcome to achieve wafer scale, uniform, and high quality TMD films for practical electronic applications are included. Advances in the electronic transport studies of TMDs are presented, such as doping, contact engineering, and mobility improvement, which contribute to overall device performance. A perspective and a look at the future for this field is provided in closing.
author_names: Xiongfei Song

Zhongxun Guo

Qiaochu Zhang

Peng Zhou

Wenzhong Bao

David-Wei Zhang
title: Progress of Large Scale Synthesis and Electronic Device Application of Two Dimensional Transition Metal Dichalcogenides.
venue: Small
year: 2017

abstract: Two dimensional (2D) materials have become a growing subject in the last 15 years mainly due to the isolation of graphene, which created a completely different class of material based on its unique, monolayer design. Since then, various stable materials of few atoms thick are showing emerging capabilities in optical electronics and photonics. Semiconducting monolayers of transition metal dichalcogenides (TMDs) such as MoS2, Mo1 xWxS2, and WS2 exhibit direct electronic band gaps; bulk crystals display indirect band gaps. Interestingly, these 2D materials show significant light interaction over a broad bandwidth ranging from infrared to ultraviolet wavelengths. The materials allow photodetection in this bandwidth without the need of cooling, thus creating new potential for uncooled detection. In this review, we discuss various 2D materials and their interaction with light for photodetection applications.
author_names: Andrew Voshell

Mauricio Terrones

Mukti Rana
title: Review of optical properties of two dimensional transition metal dichalcogenides
venue: Optical Engineering Applications
year: 2018

abstract: The remarkable properties of graphene have renewed interest in inorganic, two dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in plane bonding and weak out of plane interactions enabling exfoliation into two dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2) MoSe(2) WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
author_names: Qing Hua Wang

Kourosh Kalantar-zadeh

Andras Kis

Jonathan N Coleman

Michael S Strano
title: Electronics and optoelectronics of two dimensional transition metal dichalcogenides.
venue: Nature nanotechnology
year: 2012