Search query: NXP hardmask photoresist

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abstract: Ahardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhy dride, methyl acetoacetate, propionic anhydride, ethyl 2ethylacetoacetate, butyric anhydride, ethyl 2 ethylacetoac etate, Valeric anhydride, 2 methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenyl hexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetram ethyldisiloxane, decamethyltetrasiloxane, dodecamethylpen tasiloxane, hexamethyldisiloxane, and mixtures thereof.
author_names: Sang Kyun Kim
title: Photoresist layer Silicon based hardmask layer Carbon based hardmask layer Substrate
year: 2017

abstract: Stochastic defects in the photoresist profile are one of the main yield limiters in EUV lithography patterning. These stochastic defects can be, for example, local resist loss, resist profile footing, or resist scumming. A subset of these defects is transferred through the hardmask open (HMO) patterning, leading ultimately to electrical opens and shorts. We use on wafer data and process recipes to inform a physical etch model of the HMO process. This model is tested and confirmed by comparison to additional on silicon data. The established model provides a visualization of the defect transfer through individual process steps and highlights critical patterning steps that may limit electrical yield. For example, a change in in situ deposition time is observed to be more sensitive than oxide open or planarization film open times both in the model and on wafer. This provides us the insight to focus tuning deposition step times to reduce defectivity and improve process performance. Furthermore, this model provides insight into the type of defects which are eliminated during specific patterning steps, and the type of defects which are persistent and ultimately lead to electrical opens and shorts. To characterize these defects, we plant intentional defects with varying dimensions and study which ones stay through the entire HMO process and which ones are eliminated. This insight helps better understand the HMO process, which may lead in the future to further process improvements.
author_names: Dominik Metzler

Mohamed Oulmane

Sagarika Mukesh

Philip J Stopford

Karthik Yogendra

Lawrence S Melvin
title: Simulation of photoresist defect transfer through subsequent patterning processes
venue: Advanced Lithography
year: 2020

abstract: A thick spin on carbon hardmask (SOH) material is designed to overcome inherent problems of amorphous deposited carbon layer (ACL) and thick photoresist. For ACL in use of semiconductor production process, especially when film thickness from sub micrometer up to few micrometers is required, not only its inherent low transparency at long wavelength light often causes alignment problems with under layers, but also considerable variation of film thickness within a wafer can also cause patterning problems. To avoid these issues, a thick SOH is designed with monomers of high transparency and good solubility at the same time. In comparison with photoresist, the SOH has good etch resistance and high thermal stability, and it provides wide process window of decreased film thickness and increased thermal budget up to 400degC after processes such as high temperature deposition of SiON. In order to achieve high thickness along with uniform film, many solvent factors was considered such as solubility parameter, surface tension, vapor pressure, and others. By optimizing many solvent factors, we were able to develop a product with a good coating performance
author_names: Taeho Kim

Young-Min Kim

Sunmin Hwang

Hyunsoo Lee

Miyeon Han

Sanghak Lim
title: Study on thick film spin on carbon hardmask
venue: Advanced Lithography
year: 2017

abstract: The present invention relates to a resist lower layer film as a hard mask composition. The present invention is an organic silane based polymer (A) And the resist lower layer film provides a hard mask composition that includes one or more stabilizing agent (B) Resist lower layer film as a hard mask composition of the present invention can transfer the fine pattern to the material layer to exhibit excellent storage stability and excellent hard mask properties. A hard mask, an organic silane based polymer, a stabilizer, the storage stability
title: Hardmask Composition Coated under Photoresist with Improved Storage Stability
year: 2008

abstract: Abstract The study of the effects of photoresist thickness and the use of PECVD deposited oxide hard mask layer during source/drain high dose ion implantation process in the fabrication of ion sensitive field effect transistor (ISFET) is presented. Implementation of the new optimized process for the source/drain implant mask together with the improved process module have been successful in improving the threshold voltage (Vt) of the ISFET device from negative to more than 0.3 V. Consistent high ISFET yields of more than 90% were possible to achieve.
author_names: Nurhidaya Soriadi

Azlina Mohd Zain

Sharaifah Kamariah Wan Sabli

Mohd Rofei Mat Hussin

Hing Wah Lee
title: Study of Oxide Hardmask Effect on High Dose Implant Process for ISFET Fabrication
year: 2017

abstract: A hardmask composition for an under photoresist layer is provided to ensure excellent reproducibility of pattern and storage stability, good adhesion with a resist, and excellent solvent resistance for a developer used after exposing the resist, and to reduce film reduction in plasma etching. A hardmask composition for an under photoresist layer comprises an organic silane based polymer generated from a compound represented by the chemical formula 1; at least one selected from the group consisting of pyridinium p toluenesulfonate, amidosulfobetain 16, camphor 10 sulfonic acid ammonium salt, ammonium formate, triethylammonium formate, trimethyammonium formate, tetramethylammonium formate, pyridinium formate, tetrabutylammonium acetate, tetrabutylammonium azide, tetrabutylammonium benzoate, tetrabutylammonium bisulfate, tetrabutylammonium bromide, tetrabutylammonium chloride, tetrabutylammonium cyanide, tetrabutylammonium fluoride, tetrabutylammonium iodide, tetrabutylammonium sulfate, tetrabutylammonium nitrate, tetrabutylammonium nitrite, tetrabutylammonium p toluenesulfonate and tetrabutylammonium phosphate; and solvent. In chemical formula 1, Rw, Rx, Ry and Rz are independently H or C1 5 alkyl; and n is an integer of 4 20.
title: Hardmask composition for under photoresist layer; method of manufacturing semiconductor ic device therewith; and semiconductor ic device produced thereby
year: 2007

abstract: A hard mask composition for a photoresist under layer, and a method for preparing a semiconductor integrated circuit device by using the composition are provided to improve film characteristics and storage stability and to enhance the solvent resistance against a resist developer. A hard mask composition for a photoresist under layer comprises a silane condensate which is a condensation polymer of the hydrolyzate formed from at least one compound represented by the formula 1; an ammonium salt; and a solvent, wherein R1 is H, a substituted or unsubstituted C1 C30 aliphatic hydrocarbon group, a substituted or unsubstituted C1 C30 aromatic hydrocarbon group, a substituted or unsubstituted C1 C30 alicyclic hydrocarbon group, a substituted or unsubstituted C1 C30 silyl group, a substituted or unsubstituted C1 C30 allyl group, a substituted or unsubstituted C1 C30 acyl group, a vinyl group, an amine group, an acetate group, or an alkali metal; x is 0 2; and R2 is H, a substituted or unsubstituted C1 C4 aliphatic hydrocarbon group, an acetate group, Na, or K.
title: Hardmask composition coated under photoresist and method for preparing semiconductor devices using thereof
year: 2007

abstract: A hard mask composition for a lower layer of resist is provided to realize excellent film properties and shelf stability, to allow transfer of a high quality pattern to a substrate, and to form a hard mask having excellent etching resistance against O2 plasma gas used in the subsequent etching step. A hard mask composition for a lower layer of resist comprises: an organosilane based polymer produced from the compounds represented by the formula of [R1O]3Si X, [R2O]3Si R3 and [R4O]3Si Y Si[OR5]3 in the presence of an acid catalyst; and a solvent. In the formulae, X is a C6 C30 functional group containing a substituted or non substituted aromatic ring; each of R1, R2, R4 and R5 independently represents a C1 C6 alkyl; R3 is a C1 C12 alkyl; and Y is a linking group selected from an aromatic ring, C1 C20 linear or branched, substituted or non substituted alkylene, C1 C20 alkylene group whose backbone contains an aromatic ring, heterocyclic ring, urea or isocyanurate group, and C2 C20 hydrocarbon group containing a multiple bond.
title: Hardmask composition coated under photoresist, process of producing integrated circuit devices using the same and semiconductor device produced by the process
year: 2006

abstract: A hard mask composition for a resist under layer, a method for preparing a semiconductor integrated circuit device by using the composition, and a semiconductor integrated circuit device prepared by the method are provided to improve the reproducibility of pattern, the adhesion to a resist, the resistance against a developing layer and storage stability. A hard mask composition comprises an organosilane based polymer which is prepared by the reaction of at least one kind of compound represented by [R1O]3Si R2 and has a polydispersity of 1.1 2; a solvent; and optionally an acid catalyst, wherein R1 is a C1 C5 alkyl group, an acetoxy group, or an oxime group; and R2 is H, a C1 C5 alkyl group, an aryl group, or an aralkyl group. Preferably the organosilane based polymer is represented by the formula 2, wherein R2 is H, a C1 C5 alkyl group, an aryl group, or an aralkyl group.
title: Hardmask composition coated under photoresist comprising organosilane polymer and process of producing integrated circuit devices using thereof
year: 2006

abstract: A hard mask composition under a resist layer is provided to control the quantity of an alkoxy group of a final polycondensation material by adjusting the quantity of introduced water in a hydrolysis process of a compound. An organic silane based polymerization material has an alkoxy group generated from a compound designated by the following chemical formula 1 or an alkoxy group generated from compounds designated by the following chemical formulas 1 and 2. A hard mask composition includes the organic silane based polymerization material and a solvent. The organic silane based polymerization material is a polycondensation material of a hydrolytic material designated by the following chemical formula 3 that is obtained from the compound designated by the following chemical formula 1, or a polycondensation material of a hydrolytic material designated by the following chemical formulas 3 and 4 that are respectively obtained from the compounds designated by the following chemical formulas 1 and 2. Chemical formula 1 is [RO]3Si R' wherein R is methyl or ethyl and R' is substitution or non substitution alkyl of a ring or non ring shape. Chemical formula 2 is [RO]3Si Ar wherein R is methyl or ethyl and Ar is a functional group including an aromatic ring. Chemical formula 3 is R'Si[OR]n[OH]3 n wherein R is methyl or ethyl, R' is substitution or non substitution alkyl of a ring or non ring shape, and n is 0 3. Chemical formula 4 is ArSi[OR]n[OH]3 n wherein R is methyl or ethyl, Ar is a functional group including an aromatic ring, and n is 0 3.
title: Hardmask composition coated under photoresist and process of producing integrated circuit devices using thereof
year: 2006