Search query: finfet TEM FEI

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abstract: Advanced CMOS technology for the sub 22nm nodes has seen the introduction of new device architectures (FINFET, FDSOI) and new materials, and requires characterization techniques capable of performing atomic scale 2D or 3D imaging, chemical composition or strain measurements. We will present several examples of how transmission electron microscopy techniques are being used to meet the current needs of strain, chemical or dopant (Boron, Phosphorus and Arsenic) characterization in the field of advanced microelectronics: The use of precession electron diffraction (PED) dedicated to the strain measurement has been introduced in 2013 by J L. Rouviere [1] at CEA Grenoble and developed in collaboration with ThermoFisher Scientific (formerly FEI) This technique provides an excellent strain precision of around 5x10 4 due to the increased number of diffracted disks and the removal of intensity fluctuations (mostly due to dynamical effects) within each disk. An additional benefit of precession is the use of higher convergence angles providing electron beams smaller than 2 nm. In the framework of the 3DAM project, PED has been applied to Si SiGe heterostructures to quantitatively determine the Ge content in SiGe layers and the degree of relaxation in embedded multilayer fins. We will also show how PED can be performed in combination with mechanical modelling using finite element simulations to determine the developed stresses in a stressor Si3N4 film, which cannot be directly measured using conventional TEM techniques due to the amorphous state of Si3N4 [2]
author_names: V Delaye

Nicolas Bernier

Zineb Saghi

Tony Printemps

G Audoit

David Cooper
title: 2D 3D Advanced Transmission Electron Microscopy for Semiconductor Characterization
year: 2018

abstract: Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high resolution TEM (HRTEM) analysis may be limited due to the resulting FIB induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high quality and electron transparent TEM specimens of less than 20 nm are obtained.
author_names: Cecile Semana Bonifacio
title: Low energy Ar ion milling of FIB TEM specimens from 14 nm and future FinFET technologies
year: 2018

abstract: Seeking improved accuracy in an enhanced timely fashion is a constant task facing all physical failure analysis (PFA) and transmission electron microscopy (TEM) teams at wafer foundries [1~3] For FinFET semiconductor devices of 14nm and beyond, the intrinsic complexity of 3D FinFET structures becomes escalated. Inevitably, some features at a nanometer scale are thinner than a thickness of a TEM lamella (e.g. around 50~100nm typically, depending on the orientation) This adds to additional complications in straightforward interpretation of the TEM images and sometimes even puzzles integration teams for quick root cause identification of major detractors impacting wafer yield.
author_names: Wayne W Zhao

Bianzhu Fu

Yong Wei

Irene Brooks
title: A Novel Strategy to Effectively Characterize FinFET Device by Multidirectional Comprehensive Analytical TEM in Semiconductor Wafer foundries
venue: Microscopy and Microanalysis
year: 2017

abstract: Abstract We report on the mitigation of curtaining artifacts during transmission electron microscopy (TEM) lamella preparation by means of a modified ion beam milling approach, which involves altering the incident angle of the Ga ions by rocking of the sample on a special stage. We applied this technique to TEM sample preparation of a state of the art integrated circuit based on a 14 nm technology node. Site specific lamellae with a thickness <15 nm were prepared by top down Ga focused ion beam polishing through upper metal contacts. The lamellae were analyzed by means of high resolution TEM, which showed a clear transistor structure and confirmed minimal curtaining artifacts. The results are compared with a standard inverted thinning preparation technique.
author_names: Andrey I Denisyuk

Tomas Hrncir

Jozef Vincenc Obona

Martin Petrenec

Jan Michalicka
title: Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device
venue: Microscopy and Microanalysis
year: 2017

abstract: FEI Titan TEM Upgrades Accessories Designed to update and enhance the capabilities of your Titan TEM true standard true gridFull text Since the introduction of Titan in 2005, FEI has continuously increased the capabilities of the Titan product family We can offer to each Titan u
author_names: Gina Garaventa
title: FEI Titan TEM Upgrades
year: 2017

abstract: The FEI Titan 80 300 TEM is a high resolution transmission electron microscope equipped with a field emission gun and a corrector for the spherical aberration C S of the imaging lens system. The instrument is designed for the investigation of a wide range of solid state phenomena taking place on the atomic scale, which requires true atomic resolution capabilities. Under optimum optical settings of the image C S corrector (CEOS CETCOR) the point resolution is extended up to the information limit of well below 100 pm with 200 keV and 300 keV electrons. A special piezo stage design allows ultra precise positioning of the specimen in all 3 dimensions. Digital images are acquired with a Gatan 2k x 2k slow scan charged coupled device camera.
author_names: Andreas Thust

Juri Barthel

Karsten Tillmann
title: FEI Titan 80 300 TEM
year: 2016

abstract: In early 2011 FEI Company launched the "Falcon" its first commercial direct electron detector product intended for application in 3 D electron microscopy in the life sciences. In this paper we discuss the principle of direct electron detection and its implementation in Falcon cameras. We describe the signal formation in the sensor and its impact on the detection quantum efficiency (DQE) of the sensor. Insights into the signal formation led us to improved camera designs. Three significant improvements are discussed. (1) Back thinning of the sensor. This is implemented in the second generation Falcon (Falcon 2) where the sensor thickness is reduced to 50 mm, and in the latest generation Falcon 3 detector with further back thinning down to 30 mm. (2) The introduction of electron counting, a signal processing technology implemented in Falcon 3. (3) Dose fractionation mode, which allows the user to access intermediate results during the illumination of the sample.
author_names: Maarten Kuijper

Gerald van Hoften

B Janssen

Rudolf Geurink

Sacha De Carlo

Matthijn R J Vos

Gijs van Duinen

B van Haeringen

Marc M H Storms
title: FEI's direct electron detector developments: Embarking on a revolution in cryo TEM.
venue: Journal of structural biology
year: 2015

abstract: This document describes the installation, performance, and early results from the FCRD funded acquisition of a new advanced analytical scanning transmission electron microscopy (S/TEM) at the Oak Ridge National Laboratory Low Activation Materials Development and Analysis (LAMDA) facility.
author_names: Chad M Parish
title: MT3FT 15OR0204122: Report on the acquisition and installation of FEI Talos F200X S/TEM
year: 2015

abstract: FEI launched the new Talos Arctica(tm) cryo transmission electron microscope (TEM) for high resolution, three dimensional (3D) analysis of biological molecules or macro molecular complexes in their native, fully hydrated state. The ease of use of the system's automated cryo TEM workflow makes is useful to scientists that do not have an extensive background in electron microscopy (EM)
author_names: Mark T Anderson
title: FEI Unveils New Talos Arctica Cryo TEM for Integrated Structural Biology Research
year: 2015

abstract: Introductions of 3 Dimentional FinFET transistors in semiconductor device open a new era for continuous shrinkage of semiconductor transistor nodes. One big challenge for physical failure analysis (PFA) and transmission electron microscopy (TEM) is that, for device of 20nm, 14nm, an beyond, features of interests (FOI) are mostly thinner than a thickness of a TEM lamella (say, around 50~150nm) depending on the orientation. This adds in ambiguity in interpretation of the TEM imaging straightforward. Combined with intrinsic complexity from the 3D FinFET structures themselves, PFA/TEM teams at waferfoundries truly have to constantly think out of box for novel approaches to effectively and timely isolate faults and conclusively identify root causes of yield detractors [1~4]
author_names: Wayne W Zhao

Stephen Mongeon

Bianzhu Fu

Esther Chen

Daniel Flatoff

Nicolas LaManque

J D Russell
title: 3D Analytical TEM Approach to Effectively Characterize 3D FinFET Device Features in Semiconductor Wafer foundries
year: 2014