Search query: Graphene and two-dimensional materials for silicon technology

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abstract: The development of silicon semiconductor technology has produced breakthroughs in electronics from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three dimensional monolithic construction of multifunctional high rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon based nanosystems, and also consider the prospects for computational and non computational applications. Progress in integrating atomically thin two dimensional materials with silicon based technology is reviewed, together with the associated opportunities and challenges, and a roadmap for future applications is presented.
author_names: Deji Akinwande

Cedric Huyghebaert

Ching-Hua Wang

Martha I Serna

Stijn Goossens

Lain-Jong Li

H -S Philip Wong

Frank H L Koppens
title: Graphene and two dimensional materials for silicon technology
venue: Nature
year: 2019

author_names: Andreas Bablich

Satender Kataria

Vikram Passi

Max Christian Lemme
title: Graphene and Two Dimensional Materials: Extending Silicon Technology for the Future?
year: 2017

abstract: With the explosion of data in the information universe and the approaching of fundamental limits in silicon based flash memories, the exploration of new device architectures and alternative materials is necessary for next generation memory technology. Accordingly, emerging two dimensional (2D) material based memristive devices have attracted increasing attention due to their unique properties and great potential in flexible and wearable devices, and even neuromorphic computing systems. Herein, we provide an overview of the recent progress on memristive devices based on 2D materials beyond graphene. The device structures and choice of active materials and electrodes materials are summarized for various types of 2D material based memristive devices. Following the discussion and classification on the device performances and mechanisms, the challenges and perspectives on future research based on 2D materials are also presented.
author_names: Lei Zhang

Tian Gong

Huide Wang

Zhinan Guo

Han Zhang
title: Memristive devices based on emerging two dimensional materials beyond graphene.
venue: Nanoscale
year: 2019

abstract: Two dimensional (2D) materials such as graphene and transition metal chalcogenides have been extensively studied because of their superior electronic and optical properties. Recently, 2D materials have shown great practical application in position sensitive detectors (PSDs) originating from the lateral photoelectrical effect of the materials or junctions. The high position sensitivity and ultrafast photoresponse of PSDs based on 2D materials, especially compatibility with Si technology, may enable diverse optoelectronic applications. In this review, recent studies of PSDs based on 2D materials are summarized, providing a promising route for high performance PSDs. Photodetectors that can monitor the location of an incident laser spot are useful for applications such as laser beam alignment and stabilization. While silicon p n or p i n detectors are commonly used, Chang Hu, Xianjie Wang and Bo Song from Harbin Institute of Technology in China, have now reviewed the advantages and capabilities of using a variety of 2D materials for performing this task. They report how junctions based on pairing graphene or molybdenum disulfide with silicon can result in positive sensitive detectors can be highly sensitive and offer an ultrafast response. The good performance is thought to be due to the high charge mobility and strong absorption of the 2D materials. Future challenges include extending the wavelength range of operation of such detectors beyond the visible to the near infrared and ultraviolet.
author_names: Chang Hu

Xianjie Wang

Bo Song
title: High performance position sensitive detector based on the lateral photoelectrical effect of two dimensional materials
venue: Light, science applications
year: 2020

abstract: Two dimensional (2D) materials have attracted a lot of attention due to their optimal optoelectronic properties which are not found in the domain of silicon based electronic materials [1] The identification and characterization of 2D materials, especially differentiation of few layer from the bulk phase, is crucial for progress in materials research and manufacturing process development. Raman spectroscopy, and more specifically lowfrequency/THz Raman (r) analysis, has been recently introduced as a highly sensitive, real time and nondestructive analytical tool for these novel materials [2] The low wavenumber region which can aid the quantification of layers is usually not accessible with conventional Raman spectroscopy systems. Using volume holographic grating (VHG) based filter technology, we have developed a THzRaman (r) system that enables access to the low frequency region with a single stage spectrometer.
author_names: James T A Carriere

Randy A Heyler

Anjan Roy
title: THz Raman(r) Characterization of Graphene and Two Dimensional Nanomaterials
year: 2016

abstract: In this work, side gate transistors based on graphene and molybdenum disulfide in comparison to their respective top or back gated devices are presented. The graphene devices were fabricated based on an all carbon technology on silicon carbide substrates, whereas the molybdenum disulfide transistors were fabricated using the exfoliation technique. The output characteristics are analyzed in terms of transconductance in dependence on the geometrical device properties for each material. It is shown that side gate transistors are able to reach the transconductances of conventional top gate MOSFETs and that this type of transistor can be used as a simple tool for material properties characterization.
author_names: B Hahnlein

Mohamad Adnan Alsioufy

Michael Lootze

Heiko O Jacobs

Frank Schwierz

Jorg Pezoldt
title: Planar nanowire transistors from two dimensional materials
year: 2016

abstract: Currently, the prospects for replacing traditional materials with quasi two dimensional compounds based on transition metal dichalcogenides are actively being studied. The quasi two dimensional molybdenum disulfide MoS2, a semiconductor with a finite band gap, can be used either as a standalone material or as a part of layered heterostructures. When creating nanosized electronics elements based on such ultrathin materials, the application of an atomic layer etching technology is of key importance. In this paper, a brief description of the properties of MoS2 monolayers in comparison with graphene and the monolayers of hexagonal boron nitride is considered. On the basis of the results of computer simulation by means of a DFT (density functional theory) method, effects caused in the MoS2 monolayer by chlorine atoms and molecules widely used in the state of the art of atomic layer etching applied to silicon materials are demonstrated.
author_names: Ekaterina N Voronina

Lev S Novikov

T V Rakhimova
title: Properties and Potential Applications of Quasi Two Dimensional Molybdenum Disulfide for Nanoelectronic Elements
venue: Inorganic Materials: Applied Research
year: 2018

abstract: Silicene, the silicon analogue of graphene, represents a new class of two dimensional (2D) materials, which shares some of the outstanding physical properties of graphene. Furthermore, it has the advantage of being compatible with the current Si based technology. However, this 2D material is not stable and is quite prone to oxidation. The hydride terminated silicene, called silicane, is a more stable form of 2D silicon, if functionalized via, for example, the hydrosilylation reaction. In this work, the third order nonlinear optical (NLO) properties of two functionalized silicanes, namely hydride terminated silicon nanosheets (SiNS H) and 1 dodecene functionalized silicon nanosheets (SiNS dodecene) are accessed and compared to those of single layer graphene, under 35 ps, 532 and 1064 nm excitation. The present results show that the functionalized silicanes exhibit comparable and even higher NLO response than that of single layer graphene, making them strong competitors of graphene and very interesting candidates for future photonic and optoelectronic applications.
author_names: Michalis Stavrou

Ioannis Papadakis

Aristeidis Stathis

Marc Julian Kloberg

Josef Mock

Tim Kratky

Sebastian Gunther

Bernhard Rieger

Markus Becherer

Alina Lyuleeva-Husemann

Stelios Couris
title: Silicon Nanosheets versus Graphene Nanosheets: A Comparison of Their Nonlinear Optical Response.
venue: The journal of physical chemistry letters
year: 2021

abstract: Since the end of last century, the size of integrated devices has become smaller and smaller and semiconductor industry had been experiencing great challenge on Moore law. New materials and technology in semiconductor industry had become significant in the development in network communication and auto control. Finding new materials with excellent electronic natures other than silicon had been a hot spot of the research. With the discovery of Graphene, two dimensional material system becomes important in the research. Study the optical and electronic properties of two dimensional materials, especially the carrier mobility, which can help to design proper two dimensional materials. This paper introduces how the theoretical computation of the mobility for two dimensional materials was developed. Specifically, the Bloch theorem, density functional theory, the first principle calculation and deformation potentials theorem.
author_names: Song-Lin Li
title: The Theoretical Calculation of Carrier Mobility for Two Dimensional Material
year: 2018

abstract: Submitted for the MAR14 Meeting of The American Physical Society Novel two dimensional silicon and germanium allotropes: a first principles study FLORIAN GIMBERT, CHI CHENG LEE, RAINER FRIEDLEIN, ANTOINE FLEURENCE, YUKIKO YAMADA TAKAMURA, TAISUKE OZAKI, School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST) 1 1 Asahidai, Nomi, Ishikawa 923 1292, Japan Graphene has been extensively studied but its integration into Si based device technologies is difficult. It has been recently predicted by first principles calculations that freestanding silicene and germanene, the counterparts of graphene made of Si and Ge atoms respectively, have graphene like electronic structure with a low buckled structure [1] So far, the models predicted by first principles calculations were not able to describe completely the experimental results. These difficulties tend to suggest a more complex phase diagram for freestanding silicene or for silicene on a substrate than the simple buckled phase. We report for the first time a novel two dimensional silicon and germanium allotropes, with a structure similar of that of MoS2 layer [2] After investigating a large range of lattice constants by first principles calculations with OpenMX code, we show that this structure is the ground state for freestanding two dimensional silicon and germanium layers instead of the usually considered low buckled silicene and germanene. [1] S. Cahangirov et al. Phys. Rev. Lett. 102, 236804 (2007) [2] B. Radisavljevic et al. Nature Nano. 6, 147 (2011) Florian Gimbert School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST) 1 1 Asahidai, Nomi, Ishikawa 923 1292, Japan Date submitted: 14 Nov 2013 Electronic form version 1.4
author_names: Chi-Cheng Lee

Rainer Friedlein

Antoine Fleurence

Yukiko Yamada
title: Novel two dimensional silicon and germanium allotropes a first principles study FLORIAN GIMBERT
year: 2013