Search query: A Survey of Wide Bandgap Power Semiconductor Devices

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abstract: Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC and GaN based power semiconductor devices together with an overall view of the state of the art of this new device generation.
author_names: Jose Millan

Philippe Godignon

Xavier Perpina

Amador Perez-Tomas

Jose Rebollo
title: A Survey of Wide Bandgap Power Semiconductor Devices
venue: IEEE Transactions on Power Electronics
year: 2014

abstract: Wide bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI related reliability issues are discussed, and solutions and guidelines are presented.
author_names: Boyi Zhang

Shuo Wang
title: A Survey of EMI Research in Power Electronics Systems With Wide Bandgap Semiconductor Devices
venue: IEEE Journal of Emerging and Selected Topics in Power Electronics
year: 2020

abstract: High frequency power converters enabled by wide bandgap (WBG) and silicon semiconductor devices offer distinct advantages in power density and dynamic performance. However, switching oscillations are commonly observed in these circuits with undesirable consequences. This paper reviews the impacts, root causes, and mitigation techniques of switching oscillations through literature survey, modeling analysis, and experimental investigation. We categorize the following root causes for oscillations during switching transients: 1) damped oscillation triggered by high di/dt and/or dv/dt coupled with parasitic elements; 2) undamped oscillation of WBG devices as part of a negative resistance oscillator; and 3) semiconductor device physical mechanisms such as the negative capacitance phenomenon due to conductivity modulation in insulated gate bipolar transistors or impact ionization in MOSFETs, the plasma extraction transit time effect in bipolar power devices, and the reverse conduction property of GaN HEMTs. Furthermore, this paper discusses various circuit techniques to suppress switching oscillations, and techniques of extracting parasitic inductances of power devices.
author_names: Tianjiao Liu

Thomas T Y Wong

Z John Shen
title: A Survey on Switching Oscillations in Power Converters
venue: IEEE Journal of Emerging and Selected Topics in Power Electronics
year: 2020

abstract: The design considerations for power converters operating at room or at ultra low temperatures are the same in terms of power density, reliability, and efficiency. In order to design power converters at cryogenic temperatures, the passive and active components should be carefully selected. Understanding the behavior of the components at cryogenic temperatures leads to power converter systems that have many superior advantages such as high power density (reduced size and volume) higher efficiency (reduced system losses) and even increased system reliability. This paper reviews the status of the recent research on the cryogenic temperature behavior of Si semiconductor devices, wide bandgap semiconductor devices, passive components, and power converter topologies.
author_names: Haider Mhiesan

Md Maksudul Hossain

Arman Ur Rashid

Yuqi Wei

Alan Mantooth
title: Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
venue: 2020 IEEE Aerospace Conference
year: 2020

abstract: Since the introduction of wide bandgap (WBG) power semiconductor devices, high power density (PD) inverter design has become an increasingly popular topic in modern research literature. The 2014 2015 Little Box Challenge (LBC) cosponsored by Google and the IEEE sparked even more interest in this area because WBG based designs aspired to achieve upward of 215 W/in<sup>3</sup> power densities. This article reviews several key topics of importance that are related to realizing such high PD gallium nitride (GaN) WBG based inverter designs. More specifically, this article includes a comprehensive survey of technologies employed by participating LBC finalists in their efforts to achieve new levels of PD in 400 Vdc to single phase 240 Vac conversion applications while maintaining tight specifications on dc ripple, ac ripple, and aggressive requirements on efficiency. Both singlephase dc to ac conversion and the related active energy buffer circuit topologies used by all LBC finalists are documented and compared. Additionally, a graphical trend line and figure of merit (FOM) are developed that compare PD vis vis efficiency of all proposed solutions. These are used to gain insight into how particular designs were able to achieve relatively higher PD levels and to illustrate how the GaN based design from the University of Illinois at Urbana Champaign (UIUC) was able to achieve the highest density power conversion in this competition. Furthermore, enhanced auxiliary devices and techniques used in the CE+T and Virginia Tech (VT) designs are discussed as well.
author_names: Clint W Halsted

Madhav D Manjrekar
title: A Critique of Little Box Challenge Inverter Designs: Breaking from Traditional Design Tradeoffs
venue: IEEE Power Electronics Magazine
year: 2018

abstract: Galvanic isolation between the grid and energy storage unit is typically required for bidirectional power distribution systems. Due to the recent advancement in wide bandgap semiconductor devices, it has become feasible to achieve the galvanic isolation using bidirectional isolated DC/DC converters instead of line frequency transformers. A survey of the latest generation SiC MOSFET is performed. The devices were compared against each other based on their key parameters. It was determined that under the given specifications, the most suitable devices are X3M0016120K 1.2 kV 16 mO and C3M0010090K 900 V 10 mO SiC MOSFETs from Wolfspeed. Two of the most commonly utilized bidirectional isolated DC/DC converter topologies, dual active bridge and CLLC resonant converter are introduced. The operating principle of these converter topologies are explained. A comparative analysis between the two converter topologies, focusing on total device loss, has been performed. It was found that the CLLC converter has lower total device loss compared to the dual active bridge converter under the given specifications. Loss analysis for the isolation transformer in the CLLC resonant converter was also performed at different switching frequencies. It was determined that the total converter loss was lowest at a switching frequency of 250 kHz A prototype for the CLLC resonant converter switching at 250 kHz was then designed and built. Bidirectional power delivery for the converter was verified for power levels up to 25 kW. The converter waveforms and efficiency data were captured at different power levels. Under forward mode operation, a peak efficiency of 98.3% at 15 kW was recorded, along with a full load efficiency value of 98.1% at 25 kW. Under reverse mode operation, a peak efficiency of 98.8% was measured at 17.8 kW. The full load efficiency at 25 kW under reverse mode operation is 98.5% Evaluation and Design of a SiC Based Bidirectional Isolated DC/DC Converter Alex Chu General Audience Abstract Electrical isolation between the grid and energy storage unit is typically required for bidirectional power distribution systems. Traditionally, this isolation is achieved via line frequency transformers, which tend to be bulky and heavy. This imposes a limit on the overall system power density, which is a crucial performance metric for bidirectional power distribution systems. Alternatively, the required electrical isolation can be implemented through bidirectional power converters. As a result, the overall system power density can be drastically improved. However, the losses incurred by the semiconductor devices in such converters could significantly reduce the overall system efficiency, which is another important performance metric. Due to the recent advancement in semiconductor devices, it has become feasible to design the required bidirectional power converters with high efficiency and high power density. A survey of the latest generation semiconductor devices is performed. A 25 kW converter prototype was designed and built using the selected semiconductor devices. Experimental testing was conducted for the converter prototype and efficiency values exceeding 98% were captured across the entire load range. The converter prototype has a power density of 78 W/in.
author_names: Alex Chu
title: Evaluation and Design of a SiC Based Bidirectional Isolated DC/DC Converter
year: 2018

abstract: At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established siliconbased devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross talk consideration; impact of three phase system; and topology considerations.
author_names: Fei Wang

Zheyu Zhang

Edward A Jones
title: Characterization of Wide Bandgap Power Semiconductor Devices
year: 2018

abstract: The emergence of wide bandgap semiconductors has led to development of new generation semiconductor switches that are highly efficient and scalable. To exploit the advantages of GaNFETs in power converters, in terms of reduction in the size of heat sinks and filters, a thorough understanding of the thermal behavior of the device is essential. This paper aims to establish a thermal model for wideband gap semiconductor GaNFETs commercially available, which will enable power electronic designers to obtain the thermal characteristics of the device more effectively. The model parameters is obtained from the manufacturer's data sheet by adopting an exponential curve fitting technique and the thermal model is validated using PSPICE simulations. The model was developed based on the parametric equivalence that exists between the thermal and electrical components, such that it responds for transient thermal stresses. A suitable power profile has been generated to evaluate the GaNFET model under different power dissipation scenarios. The results were compared with a Silicon MOSFETs to further highlight the advantages of the GaN devices. The proposed modeling approach can be extended for other GaN devices and can provide a platform for the thermal study and heat sink optimization.
author_names: Shri Ram

Anupa A Vijayakumari
title: Thermal modeling of wide bandgap semiconductor devices for high frequency power converters
year: 2018

abstract: Photovoltaic (PV) energy conversion systems require fast switching power devices that are highly efficient with low semiconductor loss under harsh environmental conditions. Silicon (Si) semiconductor devices are nearing their practical limits in meeting the ever increasing requirements of power converters. However, wide bandgap (WBG) semiconductor devices made from silicon carbide (SiC) are exceeding these limits. SiC power devices enable more efficient and higher performance power converters. This paper presents a non isolated dc dc boost converter based on SiC power devices optimized for use in PV systems. The performance of two otherwise identical converters is compared, one with a new SiC MOSFET/SiC Schottky diode, and one with a conventional Si MOSFET/Si diode. A comparison of switching characteristics and energy loss of each semiconductor device is performed at different switch currents. Converter total loss and overall efficiency are evaluated at different switching frequencies, input voltages, and output power levels. The results indicate that the SiC MOSFET/SiC Schottky diode in the converter is more efficient, performs better, and has reduced power loss compared to the Si MOSFET/Si diode.
author_names: Saleh S Alharbi

Ali M S Al-bayati

Salah S Alharbi

Mohammad A Matin
title: Performance evaluation of a DC DC boost converter with wide bandgap power devices
venue: 2017 IEEE Conference on Technologies for Sustainability (SusTech)
year: 2017

abstract: This paper presents a high performance dc dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN) transistor and a silicon (Si) MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN transistor has lower total power loss and better efficiency compared to the converter with the conventional Si MOSFET.
author_names: Salah S Alharbi

Saleh S Alharbi

Ali M S Al-bayati

Mohammad A Matin
title: Design and performance study of a DC DC flyback converter based on wide bandgap power devices for photovoltaic applications
venue: Optical Engineering Applications
year: 2017