Search query: multidimensional quantum well laser and temperature

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abstract: A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D) Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 degC.
author_names: Yasuhiko Arakawa

Hiroyuki Sakaki
title: Multidimensional quantum well laser and temperature dependence of its threshold current
year: 1982

abstract: By tailoring the active region quantum wells and barriers of 4.5 5.0 mm emitting quantum cascade lasers (QCLs) the device performances dramatically improve. Deep well QCLs significantly suppress carrier leakage, as evidenced by high values for the threshold current characteristic temperature <i>T</i><sub>0</sub> (253 K) and the slope efficiency characteristic temperature <i>T</i><sub>1</sub> (285 K) but, due to stronger quantum confinement, the global upper laser level lifetime t<sub>4g</sub> decreases, resulting in basically the same room temperature (RT) threshold current density <i>J</i><sub>th</sub> as conventional QCLs. Tapered active region (TA) QCLs, devices for which the active region barrier heights increase in energy from the injection to the exit barriers, lead to recovery of the t<sub>4g</sub> value while further suppressing carrier leakage. As a result, experimental RT <i>J</i><sub>th</sub> values from moderate taper TA 4.8 mm emitting QCLs are ~14% less than for conventional QCLs and <i>T</i><sub>1</sub> reaches values as high as 797 K. A step taper TA (STA) QCL design provides both complete carrier leakage suppression and an increase in the t<sub>4g</sub> value, due to Stark effect reduction and strong asymmetry. Then, the RT <i>J</i><sub>th</sub> value decreases by at least 25% compared to conventional QCLs of same geometry. In turn, single facet, RT pulsed and continuous wave maximum wallplug efficiency values of 29% and 27% are projected for 4.6 4.8 mm emitting QCLs.
author_names: Dan Botez

Jae Cheol Shin

J D Kirch

Chun-Chieh Chang

Luke J Mawst

Thomas L Earles
title: Multidimensional Conduction Band Engineering for Maximizing the Continuous Wave (CW) Wallplug Efficiencies of Mid Infrared Quantum Cascade Lasers
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2013

abstract: A method for calculating the electronic states and optical properties of multidimensional semiconductor quantum structures is described. The method is applicable to heterostructures with confinement in any number of dimensions: e.g. bulk, quantum wells, quantum wires and quantum dots. It is applied here to model bulk and multiquantum well (MQW) InGaAsP active layer quaternary lasers. The band parameters of the quaternary system required for the modeling are interpolated from the available literature. We compare bulk versus MQW performance, the effects of compressive and tensile strain, room temperature versus high temperature operation and 1.3 versus 1.55 pm wavelength operation. Our model shows that: compressive strain improves MQW laser performance. MQW lasers have higher amplification per carrier and higher differential gain than bulk lasers, however, MQW performance is far from ideal because of occupation of non lasing minibands. This results in higher carrier densities at threshold than in bulk lasers, and may nullify the advantage of MQW lasers over bulk devices for high temperature operation.
author_names: David Gershoni

Charles Howard Henry

Gene A Baraff
title: Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers
year: 1993

abstract: A robust, modular and comprehensive simulation model, built on a first principles microscopic physics basis, includes the fully time dependent and spatially resolved internal optical, carrier and temperature fields within an arbitrary geometry edge emitting high power semiconductor laser device. The simulator is designed to run interactively on a multi processor shared memory graphical supercomputer by utilizing a highly efficient algorithm running in parallel over multiple CPUs. The experimentally validated semiconductor optical response is computed using a microscopic approach that includes the relevant bandstructure of the Quantum Well and confining barrier regions together with a fully quantum mechanical many body calculation that takes all occupied bands into account. The latter quantity is introduced into the simulator via a multidimensional look up table that captures the local dependence of the gain and refractive index of the structure over a broad range of frequencies and carrier densities. The simulator is designed in a modular form so as to be able to include differing device geometries (broad area, flared, multiple contacts, arrays, filters (DBR or DFB grating sections) index/gain guiding, temperature and current profiles and so on. Results will be presented for both broad area and MOPA devices.
author_names: Jerome V Moloney

M Kolesik

Joerg Hader

Stephan W Koch
title: Modeling high power semiconductor lasers: from microscopic physics to device applications
venue: Advanced High Power Lasers and Applications
year: 2000

abstract: We report room temperature near infrared nanolasers based on AlGaAs/GaAs nanowire/single quantum well heterostructure grown by MOCVD. When subjects to pulsed optical excitation at room temperature, the nanowire exhibits lasing at 791 nm with low threshold of 2.5 kW/cm2.
author_names: Wei Wei

Xin Yan

Xiaofeng Ma

Vittorio Giarola

Xia Zhang
title: A room temperature near infrared nanowire/quantum well laser
venue: 2018 23rd Opto Electronics and Communications Conference (OECC)
year: 2018

abstract: High power GaSb based type I GaInAsSb/AlGaAsSb three quantum wells laser diodes emitting at 2.4 mm were optimized and fabricated. The laser wafer was grown with solid source Molecular Beam Epitaxy System. With optimizations of the epitaxial structure design and the ohmic contact, the operation voltage and the internal loss decreased; the internal quantum efficiency and output power increased. The internal quantum efficiency was determined about 80.1% and the internal loss was 12 cm 1 by measuring laser diodes with different cavity lengths. An uncoated 2 mm long laser diode with 90 mm wide aperture exhibited a threshold current density of 222 A/cm2 (74 A/cm2 per quantum well) a continuous wave output power of 232 mW and a quasi continuous wave (1 kHz, 10 ms) output power of 1 W at room temperature.
author_names: Yuzhi Song

Jiakun Song

Yu Zhang

Kangwen Li

Yun Xu

Guofeng Song

Lianghui Chen
title: High power and low loss room temperature operation of 2.4mm GaInAsSb/AlGaAsSb type I strained quantum well laser diodes
venue: Applied Optics and Photonics China
year: 2015

abstract: A ridge waveguide 1.55 mm semiconductor laser with a multiple quantum well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, series resistance, differential efficiency, and emission wavelength, extracted from standard L I/I V measurements, is reported. The applicability of the standard ideal diode model of semiconductor laser at cryogenic temperatures is analyzed.
author_names: Emmanuel Mercado

Dipendra Adhikari

Gennady A Smolyakov

Marek Osinski
title: Low temperature characterization of a 1.55 mm multiple quantum well laser down to 10 K
venue: Photonics West Optoelectronic Materials and Devices
year: 2013

abstract: It is well known that potential fluctuation in InGaN quantum well layers is very large. To investigate its effect on the laser characteristics, we have found a new method to evaluate the degree of fluctuation from the temperature dependence of the lasing threshold excitation power density.
author_names: Itta Oshima

Y Ikeda

Shigeta Sakai

Atsushi A Yamaguchi

Yuya Kanitani

Shigetaka Tomiya
title: A New Method to Evaluate the Degree of Potential Fluctuation in InGaN Quantum Well Laser Diodes by Optical Pump Stimulated Emission Measurements
venue: 2018 IEEE International Semiconductor Laser Conference (ISLC)
year: 2018

abstract: We demonstrate room temperature transparency and optically pumped lasing with an InGaAs quantum well active region integrated in an InP nanoresonator cavity grown monolithically on silicon. As grown silicon transparent lasers will enable on chip optical interconnects.
author_names: Indrasen Bhattacharya

Fanglu Lu

Gilliard Nardel Malheiros-Silveira

Saniya Deshpande

Kar Wei Ng

Connie J Chang-Hasnain
title: Room temperature InGaAs/InP quantum well in nanopillar laser directly grown on silicon
venue: 2016 Conference on Lasers and Electro Optics (CLEO)
year: 2016

abstract: Room temperature continuous wave operation at 540 nm was demonstrated with a BeZnCdSe quantum well laser diode. Threshold current density of the narrow stripe, 800 um cavity laser was as low as ~1.7 kA/cm<sup>2</sup>
author_names: S Fujisaki

Hiroshi Nakajima

Jun-ichi Kasai

Ryoichi Akimoto

Kunihiko Tasai

Yoshiro Takiguchi

Takeshi Kikawa

Tsunenori Asatsuma

Koshi Tamamura

S Tanaka

Shinji Tsuji

Haruhiko Kuwatsuka

Toshifumi Hasama

Hiroshi Ishikawa
title: 540 nm green room temperature CW operation of BeZnCdSe single quantum well laser diode
venue: 22nd IEEE International Semiconductor Laser Conference
year: 2010