Search query: Wide band gap power semiconductor

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abstract: It is worldwide accepted that a real breakthrough in Power Electronics mainly comes Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high switching speed, high voltage and high temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation to the end user, the electric energy undergoes a number of conversions. Which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed.
author_names: Jose Millan
title: Wide Band Gap power semiconductor devices
venue: 2013 Spanish Conference on Electron Devices
year: 2013

abstract: Due to the material limitations, the traditional silicon based power devices approach the intrinsic limits of the material in many ways. The silicon based devices have not been applicable to high voltage, high frequency, high temperature, high efficiency and high power density applications. Due to the wide band gap semiconductor devices having unmatched electrical performance of the silicon based devices, it can significantly reduce the weight of the inverter, volume, cost, and enhance efficiency and power density power electronic devices, which can withstand higher value, faster switching speeds, lower switching losses and higher operating junction temperature. The subject of high efficiency, high power density in the rail transit electrical drive demand as the background, the key technology research of high power converter based on the wide band gap power semiconductor devices is proposed. First, the topological structure of power electronic traction transformer is given. Then, the system control strategies including cascaded H bridge single phase rectifier, dual active H bridge converter control, inverter traction motor vector control, and auxiliary converter output voltage control are given. Related research will provide a solid foundation in the development of the wide band gap power devices and the high voltage large capacity device applications.
author_names: Lu Zhao

Qiongxuan Ge

Zhida Zhou

Bo Yang

Yaohua Li
title: Research of high power converter based on the wide band gap power semiconductor devices for rail transit electrical drive
venue: 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
year: 2018

abstract: Wide band gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) offer improved performance for power electronic devices compared to traditional Silicon (Si) power semiconductor devices. This paper investigates a 600V GaN Silicon CoolMOS transistor application in 400W single phase continuous conduction mode (CCM) Boost PFC converter circuits with GaN, SiC and ultrafast silicon diodes and compares power semiconductor device efficiency benefits. The 600V GaN Silicon CoolMOS transistor power efficiency improvement study and loss analysis for CCM Boost PFC converter circuits are introduced in detail. Based on the experimental study, the 600V GaN transistor enables higher energy efficiency compared with 600V Si CoolMOS for CCM Boost PFC converter at 680 kHz switching frequency: around 1% higher at low line and about 0.5% higher at high line due to low switching loss. 600V SiC diode typically outperforms ultrafast Si diode GaN diode for CCM Boost PFC converter due to low device charge, and forward voltage. 600V GaN diode suffers lowest efficiency at light load due to large device capacitive charge. The ultrafast Silicon diode has the highest efficiency at light load due to low device charge, but suffers from low efficiency at heavy load due to largest forward voltage and reverse recovery loss. According to the investigations, the combination of a 600V GaN transistor for the boost switch and a SiC rectifier for the freewheeling diode achieves the best efficiency for CCM Boost PFC converter with the lowest power loss.
author_names: Saijun Mao

Ramanujam Ramabhadran

Jelena Popovic

Jan Abraham Ferreira
title: Investigation of CCM boost PFC converter efficiency improvement with 600V wide band gap power semiconductor devices
venue: 2015 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2015

abstract: Wide band gap devices are highly suitable to harsh working conditions such as high voltage, high temperature, high frequency, and high radiation exposure. The working voltage can reach as high as 10,000 volt, while the heat flux can exceed 1 *107 W/m2, which is far beyond the realm of Si devices. Applications include spaceship, airplane, high speed train, ocean oil drilling platform, EV /HEV and intelligent manufacturing. Application areas of internet of things (loT) require new technologies such as power electronics, RF devices and solid state lighting.
author_names: Braham Ferreira
title: International technology roadmap for wide band gap power semiconductor ITRW
venue: 2016 International Symposium on 3D Power Electronics Integration and Manufacturing (3D PEIM)
year: 2016

abstract: It is worldwide accepted that a real breakthrough in Power Electronics mainly comes Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high switching speed, high voltage and high temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation to the end user, the electric energy undergoes a number of conversions. Which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed.
author_names: Jose Millan

Philippe Godignon
title: Wide Band Gap power semiconductor devices
year: 2013

abstract: MAHAJAN ANIURUDHA ATUL. Characterization of Wide Band Gap Power Semiconductor Devices. (Under the direction of Dr. Subhashish Bhattacharya) Power semiconductor devices are the main building blocks for power conversion systems. Wide band gap power devices offer advantages like improved efficiency and low system cost. This work includes the static and switching characterization of Gallium Nitride and Silicon Carbide wide band gap transistors. The characterization procedures are explained. The characterization results are compared for various transistors and advantages of these transistors over Silicon based transistors are discussed. The results are obtained by building a hardware characterization setup in the lab. (c) Copyright 2016 Anirudha Atul Mahajan
author_names: A Mahajan
title: Characterization of Wide Band Gap Power Semiconductor Devices.
year: 2016

abstract: Power electronics switching devices involving Wide Band Gap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) provide a substantial switching level improvements as compared to the silicon (Si) devices. Recently Si MOSFETs are also being superseded by silicon carbide (SiC) and gallium nitride (GaN) MOSFETs due to their superior performance in high temperature limits. In order to directly compare these two types of MOSFETs we study their various parameters like energy band gap, carrier mobility, saturation velocity and thermal conductivity. A study has also been conducted to see the effect of high temperatures on electrical properties. A circuit analysis tool Pspice is used to study these two types of MOSFETs.
author_names: Faisal Mehmood Shah

Han Min Xiao

Muhammad Awais
title: Electro thermal Comparative Analysis and Simulation of Wide Band Gap Semiconductor Materials for Power Electronic Devices
year: 2020

author_names: Bilal Ahmad
title: Wide Band Gap Power Semiconductor Devices and their Applications
year: 2015

author_names: Hiroki Takahashi

Takeshi Anzai

Fumiki Kato

Shinji Sato

Hidekazu Tanisawa

Yoshinori Murakami

Kinuyo Watanabe

Hiroshi Sato
title: Invited) Baseplate Materials for Securing Reliability of Wide Band Gap Power Semiconductor Module Operating at High Temperatures
year: 2015

abstract: The commercialization of wide band gap devices such as silicon carbide and gallium nitride transistors has made it possible for power electronics applications to achieve unprecedented performance in terms of efficiency and power density. However, the device characteristics which make this performance possible also create secondary consequences in these high performance applications. One such consequence which is particularly difficult to manage in the context of power electronics applications is the occurrence of self sustained oscillation. This problem has been recognized in the power electronics literature, but heretofore has not received an extensive analytical treatment. This dissertation provides a comprehensive analytical treatment of the self sustained oscillation phenomenon, logically separated into two components: an initial forced cycle and the subsequent oscillatory behavior. A large signal model has been developed in order to predict the occurrence of the initial forced cycle based on a set of estimated initial conditions derived from a user specified operating point. The establishment of the initial forced cycle as predicted by the large signal model creates the bias conditions necessary for the analytical treatment of the subsequent oscillatory behavior. For this purpose, a small signal model is presented which describes this phenomenon on the basis of recognizing the wide band gap device and a minimal set of parasitic components associated with the gate and drain circuits as an unintended negative conductance oscillator. In the context of established oscillator design theory it has been shown both analytically and with simulation that negative differential conductance exhibited by the parasitic model explains the conditions under which self sustained oscillation is likely to occur. Both the large signal and small signal models are shown to demonstrate good agreement with empirical results from pulsed switching experiments obtained over a wide range of operating conditions. In addition, a catalog of known solutions to the problem of self sustained oscillation is presented, along with a discussion of a method by which the current work can be used by application designers to preclude the occurrence of this phenomenon in practical systems by design.
author_names: Andrew N Lemmon
title: On the stability of circuits switched by wide band gap power semiconductor devices
year: 2013