Search query: Electronic structure and optical properties of semiconductor nanowires

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abstract: Abstract Advances in the fabrication and characterization of nanowires polytypes have made crystal phase engineering a well established tool to tailor material properties. In this review, recent progresses in the field are described, with special focus on the central role that crystal phase has in modulating the electronic and optical properties of nanowires. We start with an overview on III V nanowires, which have been developed first and for which more experimental results already exist. Then, particular attention will be devoted to group IV polytypes which represent one of the most exciting and novel topic in the field. A survey of both theoretical and experimental efforts will be provided with the final aim of highlighting the importance of crystal phase control in materials design. Graphical abstract
author_names: Luiz Henrique Galvao Tizei

Michele Amato
title: Electronic structure and optical properties of semiconductor nanowires polytypes
year: 2020

abstract: Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3 dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.
author_names: Jian-bai Xia

Kai Chang

Shu-Shen Li
title: Electronic structure and optical property of semiconductor nanocrystallites
year: 2004

abstract: In this thesis, the electronic structure and optical properties of semiconductor nanostructures are studied theoretically. Three types of nanostructures have been studied, silicon nanocrystals, free standing III V nanowires and free standing GaAs/AlGaAs nanowire superlattices. The calculations have been carried out using an atomistic, empirical tight binding approach. Silicon nanocrystals have attracted a great deal of attention after it was shown that they can emit visible light. In this thesis the highest occupied states and lowest unoccupied states of silicon nanocrystals are studied. The confinement energies of the states are calculated and the symmetries of the states are analyzed. To better understand the localization properties of the states, their wave functions are calculated and discussed. The major part of the work, contained within this thesis, regards calculations of the electronic structure and optical properties of free standing nanowires. In all the cases studied the conduction bands of the nanowires show good parabolic dispersions. Also, the degeneracy of the light and heavy hole bands of the bulk material, is broken. The band structure for GaAs, InAs and InP nanowires, oriented along the [100] crystallographic direction, with square and rectangular cross sections is studied. The effect of the cross section aspect ratio is studied with regard to band structure and wave functions. For nanowires with a square cross section the valence bands are found to show strongly non parabolic dispersions. However, when the cross section aspect ratio is increased, the dispersion of the bands become less non parabolic. For large aspect ratios the topmost valence bands show good parabolic dispersion around the Brillouin zone center. In addition the optical properties of an InP [111] oriented nanowire are studied, and the nanowire is found to have a strong optical polarization anisotropy. The band edge transition is found to be polarized parallel to the nanowire orientation. Lately, the model has been extended to handle the electronic structure of hetero structured nanowires. In this thesis the band structure of [100] oriented free standing GaAs/AlGaAs nanowire superlattices is studied. The evolution of the band structure and the opening of band gaps in the valence and conduction bands are studied as a function of AlGaAs barrier thickness and nanowire lateral size. (Less)
author_names: Martin P Persson
title: Theoretical study of electronic structure and optical properties of semiconductor nanostructures
year: 2004

abstract: This revised second edition on the "Quantum Theory of the Optical and Electronic Properties of Semiconductors" presents the basic elements needed to understand and engage in research in semiconductor physics. In this revised second edition misprints are corrected and some new and more detailed material is added. In order to treat the valence band structure of semiconductors, an introduction to the k.p. theory and the related description in terms of the Luttinger Hamiltonian is included. An introductory chapter on mesoscopic semiconductor structures discussing the modifications of the envelope function approximation caused by the spatial quantum confinement is also included. Many results are developed in parallel first for bulk material, and then for quasi two dimensional quantum wells, and for quasi one dimensional quantum wires. Semiconductor quantum dots are treated in a separate chapter. The discussion of time dependent and coherent phenomena in semiconductors has been considerably extended by including a section dealing with the theoretical description of photon echoes in semiconductors. A new chapter on magneto absorption has been added, in which magneto excitons and magneto plasmas in two dimensional systems are discussed. The chapter on electron kinetics due to the interaction with longitudinal optical phonons has been extended. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics, and is aimed at solid state physicists, engineers, materials and optical scientists.
author_names: Hartmut Haug

Stephan W Koch
title: Quantum Theory of the Optical and Electronic Properties of Semiconductors
year: 1990

abstract: We compute the subband structure of several group IV and III V 001 110 and 111 oriented nanowires using sp 3 and sp 3 d 5 s tight binding models. In particular, we provide the band gap energy of the nanowires as a function of their radius R in the range R =1 2 0 nm. Wethen discuss the self energy corrections to the tight binding subband structure, that arise from the dielectric mismatch between the nanowires with dielectric constant in and their environment with dielectric constant out. These self energy corrections substantially open the band gap of the nanowires when in out, and decrease slower 1/ R than quantum confinement with increasing R. They are thus far from negligible in most experimental setups. We introduce a semi analytical model for practical use. This semianalytical model is found in very good agreement with
author_names: Yann-Michel Niquet

Aurelien Lherbier

Nguyen Hong Quang

Marivi Fernandez-Serra

Xavier Blase

Christophe Delerue
title: Electronic structure of semiconductor nanowires
year: 2006

abstract: quantum confinement of electrons and phonons. All chapters have their own references (from historical important papers to modern monographs and textbooks) and are enriched with tables of material parameters, figures and problems (105 in total) The book contains 246 two color figures, 50 tables, a subject index and a very interesting appendix "Pioneers of Semiconductor Physics remember." Heavy emphasis on optical properties and photoelectron spectroscopy reflects the expertise of the authors. The book treats semiconductors as materials, no device applications are contained. It attempts to fill the gap between solid state physics textbooks and research articles. The approach is physical and intuitive rather than formal. Theories are presented to explain experimental results. In the author's opinion it needs for understanding only undergraduate physics and mathematics course materials (with the exception of group theory, which is presented as a "crash course" in chapter 2.3) but in fact a deeper understanding of special topics requires knowledge in second quantization. Greens functions and Freynman diagrams (for calculating light scattering) The book will be of great value for graduate students and research students in the field of semiconductor physics, for lecturers of semiconductor physics and for engineers working in the field of research and development of electronic and especially of optoelectronic devices.
author_names: Klaus Kreher
title: Fundamentals of Semiconductors Physics and Materials Properties
year: 1997

abstract: The electronic structure of spherical PbS and PbSe quantum dots is calculated with a four band envelope function formalism. This calculation accounts for both exciton energies and wave functions with the correct symmetry of the materials. The selection rules and the strength of the dipole transitions of lead salt quantum dots are derived accounting for the symmetry of the band edge Bloch functions of the lead salts. The calculated energies of the optically allowed exciton states are found to be in good agreement with experimental data. The effects of many body perturbations, such as Coulomb interactions and intervalley scattering, are also discussed.
author_names: In Byeong Kang

Frank W Wise
title: Electronic structure and optical properties of PbS and PbSe quantum dots
year: 1997

abstract: This paper provides a review of the state of the art electronic structure calculations of semiconductor nanowires. Results obtained using empirical k.p, empirical tight binding, semi empirical pseudopotential, and with ab initio methods are compared. For conciseness, we will restrict our detailed discussions to free standing plain and modulated nanowires. Connections to relevant experimental data, particularly band gaps and polarization anisotropy, will be made since these results depend crucially on the electronic properties. For completeness, a brief review on the synthesis of nanowires is included.
author_names: Lok C Lew Yan Voon

Yong Lin Zhang

Benny Lassen

Morten Willatzen

Qihua Xiong

Peter C Eklund
title: Electronic properties of semiconductor nanowires.
venue: Journal of nanoscience and nanotechnology
year: 2008

abstract: This article surveys recent developments in the rational synthesis of single crystalline zinc oxide nanowires and their unique optical properties. The growth of ZnO nanowires was carried out in a simple chemical vapor transport and condensation (CVTC) system. Based on our fundamental understanding of the vapor liquid solid (VLS) nanowire growth mechanism, different levels of growth controls (including positional, orientational, diameter, and density control) have been achieved. Power dependent emission has been examined and lasing action was observed in these ZnO nanowires when the excitation intensity exceeds a threshold ~40 kW cm 2) These short wavelength nanolasers operate at room temperature and the areal density of these nanolasers on substrate readily reaches 1 x 1010 cm 2. The observation of lasing action in these nanowire arrays without any fabricated mirrors indicates these single crystalline, well facetted nanowires can function as self contained optical resonance cavities. This argument is further supported by our recent near field scanning optical microscopy (NSOM) studies on single nanowires.
author_names: Peidong Yang

Haoquan Yan

Samuel S Mao

Richard E Russo

Justin C Johnson

Richard J Saykally

N Morris

Johnny Pham

Rongrui He

Heon-Jin Choi
title: Controlled growth of ZnO nanowires and their optical properties
year: 2002

abstract: Majoranas Arrive When a negatively charged electron meets a positron its positively charged antiparticle they annihilate each other in a flash of gamma rays. A Majorana fermion, on the other hand, is a neutral particle, which is its own antiparticle. No sightings of a Majorana have been reported in the elementary particle world, but recently they have been proposed to exist in solid state systems and suggested to be of interest as a quantum computing platform. Mourik et al. (p. 1003, published online 12 April; see the cover; see the Perspective by Brouwer) set up a semiconductor nanowire contacted on each end by a normal and a superconducting electrode that revealed evidence of Majorana fermions. Theoretically predicted particles that double as their own antiparticles emerge in a superconductor coupled indium antimonide nanowire. Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. Here, we report electrical measurements on indium antimonide nanowires contacted with one normal (gold) and one superconducting (niobium titanium nitride) electrode. Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields on the order of 100 millitesla, we observe bound, midgap states at zero bias voltage. These bound states remain fixed to zero bias, even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.
author_names: Vincent Mourik

Kun Zuo

Sergey M Frolov

Sebastien R Plissard

Erik P A M Bakkers

L P Kouwenhoven
title: Signatures of Majorana Fermions in Hybrid Superconductor Semiconductor Nanowire Devices
venue: Science
year: 2012