Search query: tunable laser semiconductor grating continuous

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abstract: Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio frequency emitters enable wireless communications. But the terahertz region (1 10 THz; 1 THz 1012 Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low consumption, solid state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm 2 up to 50 K. These results are very promising for extending the present laser concept to continuous wave and high temperature operation, which would lead to implementation in practical photonic systems.
author_names: Rudeger Kohler

Alessandro Tredicucci

Fabio Beltram

Harvey E Beere

Edmund H Linfield

A Giles Davies

David A Ritchie

Rita Claudia Iotti

Fausto Rossi
title: Terahertz semiconductor heterostructure laser
venue: Nature
year: 2002

abstract: Achieving optical gain and/or lasing in silicon has been one of the most challenging goals in silicon based photonics because bulk silicon is an indirect bandgap semiconductor and therefore has a very low light emission efficiency. Recently, stimulated Raman scattering has been used to demonstrate light amplification and lasing in silicon. However, because of the nonlinear optical loss associated with two photon absorption (TPA) induced free carrier absorption (FCA) until now lasing has been limited to pulsed operation. Here we demonstrate a continuous wave silicon Raman laser. Specifically, we show that TPA induced FCA in silicon can be significantly reduced by introducing a reverse biased p i n diode embedded in a silicon waveguide. The laser cavity is formed by coating the facets of the silicon waveguide with multilayer dielectric films. We have demonstrated stable single mode laser output with side mode suppression of over 55 dB and linewidth of less than 80 MHz. The lasing threshold depends on the p i n reverse bias voltage and the laser wavelength can be tuned by adjusting the wavelength of the pump laser. The demonstration of a continuous wave silicon laser represents a significant milestone for silicon based optoelectronic devices.
author_names: Haisheng Rong

Richard Jones

Ansheng Liu

Oded Cohen

Dani Hak

Alexander W Fang

Mario Paniccia
title: A continuous wave Raman silicon laser
venue: Nature
year: 2005

abstract: We review the recent developments in the area of optical fiber grating sensors, including quasi distributed strain sensing using Bragg gratings, systems based on chirped gratings, intragrating sensing concepts, long period based grating sensors, fiber grating laser based systems, and interferometric sensor systems based on grating reflectors.
author_names: Alan D Kersey

Michael A Davis

Heather J Patrick

Michel Joseph Leblanc

Kee P Koo

Charles G Askins

Martin A Putnam

E Joseph Friebele
title: Fiber grating sensors
year: 1997

abstract: Tunable semiconductor lasers have been listed in numerous critical technology lists for future optical communication and sensing systems. This paper summarizes a tutorial that was given at OFC '03. It includes some discussion of why tunable lasers might be beneficial, an outline of basic tuning mechanisms, some examples of tunable lasers that have been commercialized, and a discussion of control techniques. More extensive data is given for the widely tunable sampled grating distributed Bragg reflector (SGDBR) type of laser, including data for such lasers integrated monolithically with modulators to form complete transmitter front ends. A summary of reliability data for the SGDBR laser is also given. It is concluded that tunable lasers can reduce operational costs, that full band tunability is desirable for many applications, that monolithic integration offers the most potential for reducing size, weight, power and cost, and that sufficient reliability for system insertion has been demonstrated.
author_names: Larry A Coldren

Gregory A Fish

Yuliya Akulova

Jonathon S Barton

Linda Johansson

Christopher W Coldren
title: Tunable semiconductor lasers: a tutorial
venue: Journal of Lightwave Technology
year: 2004

abstract: A sequence of partially reflective slots etched into an active ridge waveguide of a 1.5 mum laser structure is found to provide sufficient reflection for lasing. Mirrors based on these reflectors have strong spectral dependence. Two such active mirrors together with an active central section are combined in a Vernier configuration to demonstrate a tunable laser exhibiting 11 discrete modes over a 30 nm tuning range with mode spacing around 400 GHz and side mode suppression ratio larger than 30 dB. The individual modes can be continuously tuned by up to 1.1 nm by carrier injection and by over 2 nm using thermal effects. These mirrors are suitable as a platform for integration of other optical functions with the laser. This is demonstrated by monolithically integrating a semiconductor optical amplifier with the laser resulting in a maximum channel power of 14.2 dBm from the discrete modes.
author_names: Diarmuid C Byrne

J P Engelstaedter

Wei-hua Guo

Qiaoyin Lu

Brian Corbett

Brendan Roycroft

James O'Callaghan

Frank H Peters

John F Donegan
title: Discretely Tunable Semiconductor Lasers Suitable for Photonic Integration
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2009

abstract: We report on a widely tunable transmitter based on a sampled grating distributed Bragg reflector (SG DBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) and an electroabsorption (EA) modulator. Modulated time averaged powers in excess of 5 dBm, RF extinction ratios >10 dB, and error free transmission at 2.5 Gb/s for 350 km of standard single mode fiber have been demonstrated across a 40 nm tuning range. In CW mode of operation, the module meets all long haul system requirements for externally modulated laser sources: stability, power >10 mW) RIN 100 yr for output wavelength stability and power across all channels.
author_names: Yuliya Akulova

Gregory A Fish

Ping-Chiek Koh

Clint L Schow

Peter Kozodoy

A Dahl

Shigeru Nakagawa

M C Larson

M P Mack

Timothy Andrew Strand

Christopher W Coldren

Eric R Hegblom

Steven Penniman

Torsten Wipiejewski

Larry A Coldren
title: Widely tunable electroabsorption modulated sampled grating DBR laser transmitter
year: 2002

abstract: Continuous wave operation of quantum cascade lasers is reported up to a temperature of 312 kelvin. The devices were fabricated as buried heterostructure lasers with high reflection coatings on both laser facets, resulting in continuous wave operation with optical output power ranging from 17 milliwatts at 292 kelvin to 3 milliwatts at 312 kelvin, at an emission wavelength of 9.1 micrometers. The results demonstrate the potential of quantum cascade lasers as continuous wave mid infrared light sources for high resolution spectroscopy, chemical sensing applications, and free space optical communication systems.
author_names: Mattias Beck

Daniel Hofstetter

Thierry Aellen

Jerome Faist

Ursula Oesterle

Marc Ilegems

Emilio Gini

Hans Melchior
title: Continuous Wave Operation of a Mid Infrared Semiconductor Laser at Room Temperature
venue: Science
year: 2001

abstract: Influences on the semiconductor laser properties of external optical feedback, i.e. return of a portion of the laser output from a reflector external to the laser cavity, have been examined. Experimental observations with a single mode laser is presented with analysis based on a compound cavity laser model, which has been found to explain essential features of the experimental results. In particular, it has been demonstrated that a laser with external feedback can be multistable and show hysteresis phenomena, analogous to those of non linear Fabry Perot resonator. It has also been shown that the dynamic properties of injection lasers are significantly affected by external feedback, depending on interference conditions between returned light and the field inside the laser diode.
author_names: R S Lang

Kohroh Kobayashi
title: External optical feedback effects on semiconductor injection laser properties
year: 1980

abstract: In this paper, we describe the spectral characteristics that can be achieved in fiber reflection (Bragg) and transmission gratings. Both principles for understanding and tools for designing fiber gratings are emphasized. Examples are given to illustrate the wide variety of optical properties that are possible in fiber gratings. The types of gratings considered include uniform, apodized, chirped, discrete phase shifted, and superstructure gratings; short period and long period gratings; symmetric and tilted gratings; and cladding mode and radiation mode coupling gratings.
author_names: Turan Erdogan
title: Fiber grating spectra
year: 1997

abstract: The ability to tune the frequency of an oscillator is of critical importance and is a fundamental building block for many systems, be they mechanical or electronic1,2. However, this very important function is still highly inadequate in optical oscillators, particularly in semiconductor laser diodes3,4. The limitations in tuning a laser frequency (or wavelength) include the tuning range and the speed of tuning, which is typically milliseconds or slower. In addition, the tuning is often not continuous and may require complex synchronization of several electrical control signals. In this Letter, we present a new tunable laser structure with a lightweight nanoelectromechanical mirror based on a single layer, high contrast subwavelength grating. The high contrast subwavelength grating reflector enables a drastic reduction of the mirror mass, which increases the mechanical resonant frequency and hence tuning speed5. This allows for a wavelength tunable light source with potential switching speeds of the order of tens of nanoseconds and suggests various new areas of practical application, such as bio or chemical sensing6,7,8, chip scale atomic clocks9 and projection displays10,11.
author_names: Michael C Y Huang

Ye Zhou

Connie J Chang-Hasnain
title: A nanoelectromechanical tunable laser
year: 2008