Search query: Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

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abstract: Organic inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin film field effect transistor having an organic inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular scale composites of alternating organic and inorganic sheets. Spin coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3)(2)SnI(4) form the conducting channel, with field effect mobilities of 0.6 square centimeters per volt second and current modulation greater than 10(4) Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low cost thin film transistors.
title: Organic inorganic hybrid materials as semiconducting channels in thin film field effect transistors
venue: Science
year: 1999

abstract: Organic inorganic hybrid perovskite materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials, which make organic inorganic hybrid perovskite materials good substitutes in all the applications put forth for organic materials and extend their application to higher speed devices than is presently possible with either a Si or organic semiconductors. Recent reports have shown high carrier mobility and long electron hole diffusion lengths of organic inorganic hybrid perovskite materials. We have demonstrated a thin film field effect transistor with an organic inorganic hybrid CH3NH3PbI3 material as the semiconducting channel based on these advantages via a low temperature vapor assisted solution process. The obvious electrical field effect is obtained in organic inorganic hybrid CH3NH3PbI3 perovskite TFTs with a field effect mobility of 396.2 cm2 V 1 s 1, current modulation greater than 104, sub threshold current of 0.4035 V per decade and threshold voltage of 3.501 V.
author_names: Yuxiang Wu

Juan Li

Jian Xu

Yangyang Du

Like Huang

Jian Ni

Hongkun Cai

Jianjun Zhang
title: Organic inorganic hybrid CH3NH3PbI3 perovskite materials as channels in thin film field effect transistors
year: 2016

abstract: Abstract Thin film field effect transistors (TFTs) are an essential part of a variety of modern electronics. Interestingly, organic inorganic hybrid perovskite (OHP) material combines the excellent carrier mobility of inorganic semiconductors and the fabricability of organic materials. Herein a thin film field effect transistor using CH3NH3PbI3 as the semiconducting channel was demonstrated. A feasible strategy was presented by modifying the gold electrode with 4 fluorobenzenethiol to eliminate the hole injection barrier between the electrode and CH3NH3PbI3. In addition, we also improved the interfacial characteristics between the gold electrode and the perovskite film by using molybdenum oxide (MoO3) buffer layer. Finally, high k alumina (Al2O3) was utilized to substitute silicon oxide (SiO2) as the dielectric layer to reach low operating voltage in OHP TFTs. The representative TFT showed superior performance with the subthreshold swing (SS) on/off current ratio and linear field effect mobility (mFE) values of 0.49 V/dec, 104 and 21.41 cm2/V, respectively. Simple low temperature processing technology and prominent device performance made this OHP TFT have broad prospects for low cost, large area, and flexible applications. The device performance is supposed to be further enhanced through molecular engineering in the organic and inorganic components of the hybrid perovskite to fulfil high speed applications.
author_names: Juan Li

Zhou-Kun Zhou

Yuze Peng

Jianjun Zhang

Ning Guo

Yanyan Sun
title: A novel TFT with organic inorganic hybrid perovskite channel layer
year: 2020

abstract: The structures, optical properties, and field effect mobilities of three semiconducting m fluorophenethylammonium based (C6H4FC2H4NH3)2SnI4 perovskites (m 2, 3, or 4) are reported and compared with the analogous measurements for the nonfluorosubstituted phenethylammonium system, (C6H5C2H4NH3)2SnI4. The (4 fluorophenethylammonium)2SnI4 system adopts a fully ordered monoclinic (P21/c) cell with the lattice parameters a 16.653(2) A, b 8.6049(8) A, c 8.7551(8) A, b 98.644(2)deg, and Z 2. Both (3 fluorophenethylammonium)2SnI4 and (2 fluorophenethylammonium)2SnI4 are refined in a monoclinic (C2/c) subcell with the lattice parameters a 34.593(4) A, b 6.0990(8) A, c 12.254(2) A, b 103.917(2)deg, and Z 4 and a 35.070(3) A, b 6.1165(5) A, c 12.280(1) A, b 108.175(1)deg, and Z 4, respectively. Each hybrid structure consists of sheets of corner sharing distorted SnI6 octahedra separated by bilayers of fluorophenethylammonium cations. The dominant low energy feature in the optical absorption
author_names: David B Mitzi

and Christos D Dimitrakopoulos

Laura L Kosbar
title: Structurally Tailored Organic Inorganic Perovskites: Optical Properties and Solution Processed Channel Materials for Thin Film Transistors
year: 2001

abstract: DOI: 10.1002/aelm.201600218 In this study, we demonstrate solution processed In2O3 NWFETs for conventional bottom gate top contacts (BGTC structure) with a multiple nanowire network. Electrospinning is utilized to readily produce a scalable continuous In2O3 nanowire network. After an annealing process to remove the polymer matrix, the polycrystalline nanowire network exhibits a conductive channel property. To improve the FET performance, a bilayer structure comprising insulating zirconium oxide (ZrO2) and a nanowire network is adopted. Having a high binding energy with oxygen, ZrO2 is favorable for the passivation of oxygen related surface defects, firmly securing the nanowire network to the substrate. In addition, Lee et al.[5] reported that electrons can pass through several insulating oxides when those oxides are combined with a semiconducting buffer layer. ZrO2, specifically, has a low work function compared to those of other insulating oxides,[6] so it is often applied to injection layer in organic light emitting diodes or resistive memory layers in resistive random access memory.[7] With a ZrO2 top layer, NWFET performance shows high current on/ off ratio (Ion/Ioff) and field effect mobility (mFET) and small SS and Von. Apart from NWFETs, due to limitations of the analyses of nanowire/thin film structures, a bilayer with In2O3 thin film and ZrO2 is fabricated to investigate the conduction mechanism, which is based on the energy band structure. Figure 1a provides a schematic illustration of the fabrication process of the hybrid In2O3 nanowire/ZrO2 thin film FET. Using a conventional single nozzle electrospinning of indium nitrate/PVP solution, indium/poly(vinylpyrrolidone) (PVP) composite fibers are obtained in the form of a fiber mat onto a p+ Si/SiO2 (100 nm) substrate (Figure 2a) The substrate is used as gate/gate insulator. Subsequent thermal annealing on a hotplate at 400 degC results in an In2O3 nanowire network that adheres to the substrate (Figure 2b and Figure S1, Supporting Information) During thermal annealing, the decomposition of PVP reduces the size of the indium/PVP fiber and some of the fibers are welded spontaneously to form nodes and branches in the randomly oriented nanowire network. The ZrO2 top layer is coated directly on the nanowire network by a solution process using spin coating and annealing process. Finally, using e beam evaporation, the source and drain electrodes are deposited on top of the In2O3 nanowire/ZrO2 thin film composite (Figure S1, Supporting Information) The diameter of the indium oxide nanowires is a Gaussian distribution, in which the average size of 224 nanowires is 35.24 4.80 nm (see Figure S3, Supporting Information) All peaks in the X ray diffraction patterns in Figure 2c correspond to cubic In2O3 crystalline structure with Nanowire field effect transistors (NWFETs) are of great interest for future nanoelectronic application such as logic circuits, chemical/biosensors, and memory/display devices. Among various nanowire materials, indium oxide (In2O3) has received much attention because of its chemical stability, high mobility, and low temperature processibility. 1D nanowires featuring unique crystalline structure and distinctive carrier transport characteristics enable outstanding electrical performance.[1] However, when single nanowire is utilized for channel, its complicated growth and transfer processes are considered as an obstacle due to low yield and inconsistency in chemical and electrical properties. On the other hand, multiple nanowire networks have less deviation and enable more reliable device performance with higher yield, suggesting their great potential for electronic devices. Another issue in nanowires is that the substantial number of oxygen related surface states originating from the large surface to volume ratio results in high off current (Ioff) subthreshold swing (SS) turn on voltage (Von) and vulnerability to environmental stimuli. In this context, various studies have reported the passivation of oxide nanowires with organic or inorganic layers.[2] However, such a passivation process requires selective deposition steps including an additional patterning process. The stacking two heterogeneous metal oxide layers, a process frequently used to engineer a channel layer in a thin film transistor, is an attractive method to passivate the surface of a channel. In this bilayer structure, a top semiconducting layer such as InGaZnO, InZnO, or HfInZnO confines a conducting bottom layer and resulting devices demonstrate high mobility and robust gate bias stability.[3] However, this kind of confinement effect is valid only when the thickness of the bottom layer remains thin usually less than 5 nm; otherwise the channel becomes conductive and the device exhibits large negative Von and off current (Ioff) www.MaterialsViews.com www.advelectronicmat.de
author_names: Hyungjin Park

Ki Ro Yoon

Sungkyun Kim

Il-Doo Kim

Jungho Jin

Yun Hyeok Kim

Byeong-Soo Bae
title: Highly Conducting In2O3 Nanowire Network with Passivating ZrO2 Thin Film for Solution Processed Field Effect Transistors
year: 2016

abstract: Molecular atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 A per cycle at 150 degC. The hybrid materials exhibit n type semiconducting behavior with a field effect mobility of approximately 5.7 cm2 V 1 s 1 and an on/off ratio of over 103 following post annealing at 200 degC in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR) transmission electron microscopy (TEM) UV Vis spectroscopy, transistor behavior, and Hall effect measurements. Density functional theory (DFT) and many body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n channel materials as valuable candidates for efficient organic CMOS devices.
author_names: Jie Huang

Hengji Zhang

Antonio T Lucero

Lanxia Cheng

Santosh Kc

Jian Wang

Julia W P Hsu

Kyeongjae Cho

Jiyoung Kim
title: Organic inorganic hybrid semiconductor thin films deposited using molecular atomic layer deposition (MALD)
year: 2016

abstract: Hybrid organic/inorganic thin film transistors (TFTs) with bottom contact configuration were fabricated using the Laser Induced Forward Transfer (LIFT) process. The semiconducting polymer P3HT was laser printed from a donor to a receiver substrate in order to form the active layer of the TFTs. With a single laser pulse, P3HT pixels were successfully printed.The printed material was analyzed morphologically by means of Optical Microscopy and its thickness was measured by profilometry. In addition, structural characterization of P3HT thin films before and after laser printing took place by using UV Visible absorption spectroscopy and X Ray Diffraction. It was found that the crystallinity of the investigated films is improved upon annealing. An organic thin film transistor (OTFT) with laser printed P3HT pixel as a channel layer was then fabricated. The OTFTs indicated a field effect mobility up to 2.2310 4 cm2/Vs and an on/off ratio on the order of 10 100.
author_names: Marina Makrygianni

Emanuele Verrelli

Nikolaos Boukos

Stavros Chatzandroulis

Dimitris Tsoukalas

Ioanna Zergioti
title: Laser printing and characterization of semiconducting polymers for organic electronics
year: 2013

abstract: A bs or pt io n RT 120 170 200 250 300 350 400 Early research on polymer electronic devices successfully demonstrated function and performance adequate for specific applications. As a result, the performance of devices fabricated from semiconducting polymers has improved to the point where 'plastic' electronics are now expected to develop into a significant industry with a large market opportunity. However, the limited stability of polymer based devices continues to hinder the path toward commercialization. Because stability in air is critical to the commercialization of polymer electronic devices, discussions concerning the stability of semiconducting polymers have focused on degradation caused by reaction with oxygen and water vapor. Conjugated polymers are, however, generally believed to be incapable of withstanding high temperatures (i.e. temperatures well above the glasstransition temperature, Tg) [6,7] thus, stability at high temperatures has received less attention. The availability of semiconducting polymers that can survive exposure to elevated temperatures would open a variety of new possibilities. For example, since inorganic electronic devices typically require process steps that must be carried out at high temperature (often over 300 8C) semiconducting polymers capable of withstanding high temperatures will enable the fabrication of novel organic inorganic hybrid devices. Here, we report the remarkable stability of the poly(2,7carbazole) derivative, poly[N 900 hepta decanyl 2,7 carbazole alt5,5 (40,70 di 2 thienyl 20,10,30 benzothiadiazole) (PCDTBT; see the inset of Fig. 1a) Prior to this report, there was no known example of a semiconducting polymer that is both stable in air at (and above) room temperature and capable of withstanding high temperatures for extended periods of time. PCDTBT is one of a relatively large class of 'donor acceptor' polycarbazole co polymers. Recently, polymer bulkheterojuction solar cells fabricated with phase separated blends of PCDTBT and PC71BM were demonstrated with internal quantum efficiency approaching 100% power conversion efficiency of 17% in response to monochromatic radiation within the absorption band, and power conversion efficiency of 6.1% in response to solar radiation. To investigate the stability of PCDTBT, we have carried out spectroscopic studies on PCDTBT thin films and transport studies using the field effect transistor (FET) architecture with PCDTBTas the semiconductor material in the channel. Figure 1 shows UV visable (UV vis) absorption spectra of PCDTBT thin films annealed for 15 minutes at various temperatures in air (Fig. 1a) and under N2 atmosphere (Fig. 1b) In air, the p p* absorption spectrum is not affected after exposure to temperatures up to 150 8C. Under N2 atmosphere (Fig 1b) the electronic band structure of PCDTBT is stable after exposure to temperatures as high as 350 8C.
author_names: Shinuk Cho

Jung Hwa Seo

Sung Heum Park

Serge Beaupre

Mario Leclerc

Alan J Heeger
title: A thermally stable semiconducting polymer.
venue: Advanced materials
year: 2010

abstract: During the last 25 years there has been growing research effort in organic electronics to improve the semiconducting, conducting and light emitting properties of organic materials (polymers, oligomers) and hybrids (organic inorganic composites) through novel synthesis and self assembly techniques. Performance improvements, coupled with the ability to process these materials at low temperatures over large areas on flexible substrates such as plastic or paper, provide unique advantages, generate new applications and form factors to address the growing needs for pervasive computing and enhanced connectivity and autonomy. Electronics based on organics also gained importance because the down scaling of structures in polymer materials can be realized with alternative, comparatively simple and low cost techniques. For a successful introduction of polymer electronics into the market an increase of the performance of the key elements of logic circuitry, the thin film transistors, will be essential. The Joanneum Research Institute of Nanostructured Materials and Photonics now routinely manufactures organic thin film transistors (OFETs) with critical channel lengths of less than a micrometer using various nanoimprinting techniques (hot embossing, UV NIL) We also evaluate and demonstrate alternative concepts for structuring organic materials, which are implementable in electronic and optoelectronic applications. We reproducibly achieve high values for several OFET parameters such as the charge carrier field effect mobility in combination with threshold voltages below 5V and high on/off ratios. We have high control over the organic semiconductor (pentacene) thin film formation, having immediate impact on the excellent electronic parameters of our sub micron OFETs.
author_names: Gunther Leising

Barbara Stadlober

Ursula Haas

Anja Haase

Christian Palfinger

Herbert Gold

Georg Jakopic
title: Nanoimprinted devices for integrated organic electronics
year: 2006

abstract: NOT AVAILABLE ORGANIC TRANSISTOR BASED LARGE SCALE INTEGRATED CIRCUITS. Ananth Dodabalapur, B. Crone, Y.Y. Lin, J. Rogers, Z. Bao, R. Filas, S. Martin, R. Sarpeshkar, H.E. Katz and W.J. Lee, Bell Laboratories, Lucent Technologies, Murray Hill, NJ. The performance characteristics of both p channel and n channel organic/polymeric thinlm transistors have reached a level that have enabled the design and experimental realization of large scale complementary integrated circuits. Successful design of such circuits requires a detailed understanding of the basic physics of operation of such transistors as well as the development or modi cation of a range of software tools. We will describe the DC, transient, and noise properties of transistors made with a number of organic and polymer semiconductors and the characteristics of circuits fabricated by a range of methods. We will also describe the advantages of complementary circuits for applications such as RF Tags. Organic transistors have also been integrated with display elements such as organic light emitting diodes. Design considerations and experimental results from such `smart pixels' will be outlined. THIN FILM ORGANIC INORGANIC FIELD EFFECT TRANSISTORS. C.R. Kagan, D.B. Mitzi, C.D. Dimitrakopoulos, L.L. Kosbar, IBM T.J. Watson Research Center, Yorktown Heights, NY. We report thinlm eld e ect transistors having organic inorganic hybrid materials as the semiconducting channels. Organic inorganic hybrids promise the high carrier mobilities of inorganic semiconductors, but may be deposited by low cost, low temperature solution processes common to organic materials. Organic inorganic perovskites, one subset of hybrid materials, self assemble from solution to form oriented, molecular scale composites of alternating inorganic perovskite sheets and organic layers. Spin coated polycrystalline thinlms of (C H C H NH SnI just one example of an organic inorganic perovskite, forms conducting channels with eld e ect mobilities of 0.6 cm /V sec and on o ratios of 10 The exibility in the chemistry and dimensionality of hybrid materials is exploited to prepare organic inorganic perovskites with alternate organic layers and inorganic frameworks. Tailoring the organic and inorganic components of the perovskites is expected to improve carrier mobility, current modulation, and stability of hybrid materials in thinlm transistors. CRYSTAL ENGINEERING OF NTCDI DERIVATIVES FOR HIGH MOBILITY ELECTRON TRANSPORT IN FETS. H.E. Katz, A.J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, Bell Laboratories, Lucent Technologies, Murray Hill, NJ. Naphthalene 1,4,5,8 tetracarboxylic dianhydride (NTCDA) and its diimide derivatives (NTCDIs) possess moderate n channel eld e ect transistor (nFET) mobilities, observable only under an inert atmosphere. However, by appending suitable substituents on NTCDI nitrogens, 2 3 order of magnitude mobility increases are observed, to 0.1 cm2/Vs. Certain uorinated substituents confer su cient stability for nFET operation in air, and one of them a ords the unprecedented capability of solution nFET fabrication. Crystal structures reveal exceptionally favorable packing geometries. These compounds show the highest mobilities and on/o ratios yet reported for organic based nFETs. TRAPPING IN ORGANIC FIELD EFFECT TRANSISTORS. J.H. Schoen, Ch. Kloc, B. Batlogg, Bell Laboratories, Lucent Technologies, Murray Hill, NJ. Organic eld e ect transistors have reached a performance similar to a Si:H devices with mobilities in the order of 1 cm /Vs and on/o ratios of 10 However, thin lm devices often exhibit instabilities, like hysteresis e ects, threshold voltage shifts, or gate voltage dependent mobilities, during operation. It has been questioned whether this behavior is intrinsic to the organic materials or can be ascribed to extrinsic e ects, such as traps or grain boundaries. We have prepared single and polycrystalline eld e ect transistors based on pentacene and oligothiophenes using di erent insulators. The mobility in high quality single crystal devices increases with decreasing temperature following a power law, indicative of band like charge transport in delocalized states. However, trapping in the bulk semiconductor, at the semiconductor/insulator interface as well as at grain boundaries can signi cantly in uence the characteristics of the devices. Especially, the formation of a potential barrier at grain boundaries due to trapped charge gives rise to thermally activated and gate voltage dependent transport. Furthermore, charged trapping sites can migrate during device operation causing, e.g. threshold voltage shifts. However, these e ects were not observed in pure (intrinsic) single crystalline transistors. Stable operation in air for more than a month is demonstrated. SESSION S2: CONDUCTIVE POLYMERS Chair: Zhenan Bao Tuesday Morning, April 25, 2000 Metropolitan II (Argent) 9,10 ANTHRACENEDIYLIDENE DERIVATIVES: SYNTHESIS, REDOX CHEMISTRY, OPTOELECTRONIC AND STRUCTURAL PROPERTIES. Martin R. Bryce, Department of Chemistry, University of Durham, Durham, ENGLAND. We will present the synthesis of new 9,10 anthracenediylidene systems, especially those bearing 1,3 dithiole substituents, and demonstrate that they are versatile building blocks for redox active materials. We will discuss: (i) photoinduced charge transfer studies and structural properties of donor pi acceptor derivatives of this system [1] (ii) synthesis and properties of novel bridged redox active cyclophanes [2] (iii) structural studies on intermolecular CT complexes of new functionalised derivatives[3] e.g. with TCNQ; (iv) the synthesis and redox behaviour of dendritic polymers incorporating bis(1,3 dithiol 2 ylidene) 9,10 dihydroanthracene units. [1] M.R. Bryce, et al, Chem. Eur. J. 1998, 4, 2580 2592. [2] T. Finn, M.R. Bryce, A.S. Batsanov, J.A.K. Howeard, Chem. Commun. 1999, 1835 1836. [3] M.R. Bryce, et al, Eur. J. Org. Chem. 1999, in press. THE ORGANIC METAL: BASIC SCIENTIFIC BACKGROUND AND TECHNOLOGICAL APPLICATIONS. Bernhard Wessling, Ormecon Chemie, Ammersbek, GERMANY. A special form of polyaniline exhibits metallic properties, so it can be considered as an \Organic Metal" It will be shown in what aspects the premetallic powder form is di erent from other polyanilines known
author_names: Kris J Senecal

Margaret A Auerbach

Heidi L Schreuder-Gibson
title: S Electrically Active Polymers Chairs
year: 2000