Search query: dry edge semiconductor machine steps

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abstract: Our work aims to monitor wheat crop using a variety based approach by taking into consideration four different phenological stages of wheat crop development. In addition to highlighting the contribution of Red Edge vegetation indices in mapping wheat dry matter and nitrogen content dynamics, as well as using Random Forest regressor in the estimation of wheat yield, dry matter and nitrogen uptake relying on UAV (Unmanned Aerial Vehicle) multispectral imagery. The study was conducted on an experimental platform with 12 wheat varieties located in Sidi Slimane (Morocco) Several flight missions were conducted using eBee UAV with MultiSpec4C camera according to phenological growth stages of wheat. The proposed methodology is subdivided into two approaches, the first aims to find the most suitable vegetation index for wheat's biophysical parameters estimation and the second to establish a global model regardless of the varieties to estimate the biophysical parameters of wheat: Dry matter and nitrogen uptake. The two approaches were conducted according to six main steps: (1) UAV flight missions and in situ data acquisition during four phenological stages of wheat development, (2) Processing of UAV multispectral images which enabled us to elaborate the vegetation indices maps (RTVI, MTVI2, NDVI, NDRE, GNDVI, GNDRE, SR RE et SR NIR) (3) Automatic extraction of plots by Object based image analysis approach and creating a spatial database combining the spectral information and wheat's biophysical parameters, (4) Monitoring wheat growth by generating dry biomass and wheat's nitrogen uptake model using exponential, polynomial and linear regression for each variety this step resumes the varietal approach, (5) Engendering a global model employing both linear regression and Random Forest technique, (6) Wheat yield estimation. The proposed method has allowed to predict from 1 up to 21% difference between actual and estimated yield when using both RTVI index and Random Forest technique as well as mapping wheat's dry biomass and nitrogen uptake along with the nitrogen nutrition index (NNI) and therefore facilitate a careful monitoring of the health and the growth of wheat crop. Nevertheless, some wheat varieties have shown a significant difference in yield between 2.6 and 3.3 t/ha.
author_names: Ghizlane Astaoui

Jamal Eddine Dadaiss

Imane Sebari

Samir Benmansour

Ettarid Mohamed
title: Mapping Wheat Dry Matter and Nitrogen Content Dynamics and Estimation of Wheat Yield Using UAV Multispectral Imagery Machine Learning and a Variety Based Approach: Case Study of Morocco
year: 2021

abstract: As the semiconductor manufacturing design rules have been continually shrinking, the requirement in linewidth uniformity, linewidth roughness, line edge roughness, and overlay has been rising to stringent levels [1] In a FinFET process, the fins are made with 193 nm immersion lithography together with the Self Aligned Quadruple Patterning (SAQP) techniques. The linewidth uniformity, line edge roughness (LER) and linewidth roughness (LWR) are critical limiting factors in the process of SAQP as LER does not scale down with the dimensions of the devices. Three times the root mean square (3s) is the most common LER characterization parameter. In this paper, we have conducted a SAQP process study on a typical film stack based on a 5 nm logic process flow. We will make the SAQP patterns with domestically made etching machine and Atomic Layer Deposition (ALD) tools and will characterize all etch steps within the mandrel 1 and spacer 1 of SAQP process in terms of variations. We will benchmark the measured data against required targets in linewidth uniformity and line edge/width roughness. Moreover, we will present and analyze the result of our study.
author_names: Bowen Wang

Yushu Yang

Yibo Wang

Yuning Zhu

Yongjian Luo

Qiang Wu

Weihao Lin

Zhunhua Liu

Yanli Li

Qingqing Wu

Shoumian Chen

Yuheng Zhang
title: Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 nm Logic SAQP Process
venue: 2020 China Semiconductor Technology International Conference (CSTIC)
year: 2020

abstract: The utility model discloses a cleaning machine platform of a semiconductor packaging product, comprising a control panel, a cleaning operation area and a drying area, wherein the control panel is positioned at the upper part of the front surface of the machine platform and is used for realizing control of the cleaning process; the cleaning operation area is positioned in the middle of the front surface of the machine platform, is shaped like a hollow groove, and comprises more than one cleaning groove; the cleaning machine platform is provided with ultrasonic generating devices corresponding to all the cleaning grooves so as to clean the semiconductor packaging product in the cleaning groove by utilizing ultrasonic wave; the drying area is used for drying the cleaned product. The cleaning process comprises the steps of ultrasonic chemical cleaning, ultrasonic washing and drying. After cleaning, the adhesive residue on the semiconductor packaging product can be basically removed completely, so that the performance of the product is greatly improved, and simultaneously, the function test of a subsequent product is convenient.
title: Cleaning machine platform of semiconductor packaging product
year: 2010

abstract: Based upon an existing or to be produced multi layered Semiconductor insulator Semiconductor carrier layer wafer (SOI Substrate) irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative Steps, in particular, an additional layer construction compensating for the etching irregularity So that in any event an approxi mately homogeneous etching removal takes place over the entire area of the wafer to be etched.
author_names: Werner H Stemer

Gregory L Mayback
title: METHOD OF PRODUCING LARGE AREA MEMBRANE MASKS BY DRY ETCHING BACKGROUND OF THE INVENTION Field of the Invention
year: 2017

abstract: Wide gap II VI semiconductors have come of age with reports last year of blue lasing action in electrically driven devices. An ability to create nanostructures in II VI materials is improtant both to fabricate structures for physical examination and to make integrated optical devices likely to be required to match this new blue light source. In this paper we report the fabrication process required to fabricate nanostructures with dimensions down to 25nm in a variety of wide gap II VI materials using electron beam lithography and reactive ion etching in CH4/H2. The impact of fabrication steps upon the crystal quality, lattice vibrations and band edge emission has been studied studied by XPS, Raman scattering and low temperature luminescence. No signs of serious fabrication related damage is found using these techniques thus opening the doors for a whole range of novel semiconductor nanostructures
author_names: Clivia M Sotomayor Torres

A P Smart

Majeed A Foad

Chris D W Wilkinson
title: Fabrication and spectroscopy of dry etched wide gap II VI semiconductor naonostructures
year: 1992

abstract: This paper presents a novel organic embedded trace damascene redistribution layer (RDL) process for panel scale 2.5 D interposers and high density fan out package (HDFO) substrates. A minimum feature size of 1.5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> line and space using ultrathin polymer dielectrics on glass, silicon, and as well as on organic laminate was demonstrated. This is the first demonstration of a complete set of materials and processes that can be applied to large glass or organic panels, to bridge the interconnect gap between current semiadditive process (SAP) RDL and wafer back end of line (BEOL) RDL. The ultra fine pitch multilayer RDL structures demonstrated in this paper achieve an optimum balance of high IO density, high electrical performance, and low process costs. IO density in terms of IOs per mm per layer, as defined by Intel, refers to the number of traces routed per millimeter of die edge on one RDL layer of an interposer or package substrate. The current SAP technology can achieve an IO density of about 40 IOs/mm/layer on 510 mm <inline formula> <tex math notation="LaTeX"\times 510$ /tex math>/inline formula> mm organic laminate panels. The challenges of fabricating copper metal traces below 5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> width and 5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> space using conventional SAP are discussed. On the other hand, wafer based BEOL damascene RDL technology can scale to IO densities of greater than 200 IOs/mm/layer, but at relatively higher costs on 300 mm diameter round wafers. An additional challenge for silicon interposers is low die to die interconnect data rate of single copper trace due to the high resistance of BEOL RDL structure. A combination of larger cross sectional area with high aspect ratio (AR) is preferred for low resistance, high bandwidth escape routing traces. In this paper, the materials and process flow of embedded trace damascene RDL technology featuring trenches of 1.5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> width and 1.5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> space with AR of 2 4 will be described. A new 5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> thick dry film photosensitive polymer dielectric IF4605 was used for the trench layer as well as the via layer. A large panel scalable Surface Planar DFS8910 tool was used to achieve a highly planar metal polymer RDL surface, at potentially lower costs than chemical mechanical polishing that has been used in prior work. The processes discussed in this paper will enable routing of fine copper traces on panel based interposers and HDFOs at higher throughput and potentially lower costs than BEOL processes. A two metal layer, 20 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> IO pitch silicon like RDL test vehicle was fabricated with 2.5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> wide and 2.5 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> space embedded traces and integrated with 2 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> diameter microvias using IF4605 on glass. There was no pad in the integration. This pad less structure can be used for achieving theoretically maximum interconnect density. The process flow emulates the salient features of damascene processes used for BEOL RDL on semiconductor wafers, but simplifies them using dry film polymer materials and panel processes. Hence, it is referred to as organic embedded trace damascene or simplified as an organic damascene process (ODP) in this paper. The novel ODP interconnect addresses the current limitations of both SAP and BEOL processes. The key highlights of this new ODP technology are: 1) IO densities of 200 IO/mm/layer or more; 2) via to via pitch of <inline formula> <tex math notation="LaTeX"$20~\mu \text{m} /tex math>/inline formula> or less; 3) high AR of routing traces in the range of 2 4; 4) precise RDL linewidth control; 5) double sided process with glass core; and 6) reduced number of process steps and panel scalability leading to lower fabrication costs.
author_names: Fuhan Liu

Chandrasekharan Nair

A Kubo

Tomoyuki Ando

Frank L Wei

Venky Sundaram

Rao R Tummala
title: Organic Damascene Process for 1.5 \mu$ m Panel Scale Redistribution Layer Technology Using 5 \mu$ m Thick Dry Film Photosensitive Dielectrics
venue: IEEE Transactions on Components, Packaging and Manufacturing Technology
year: 2018

abstract: This original study investigates the damages of WC 6Co uncoated carbide tools during dry turning of AISI 1045 steel at mean and high speeds. The different wear micromechanisms are explained on the basis of different microstructural observations and analyses made by different techniques: (i) optical microscopy (OM) at macro scale, (ii) scanning electron microscopy (SEM) with back scattered electron imaging (BSE) at micro scale, (iii) energy dispersive spectroscopy (EDS) X ray mapping with wavelength dispersive spectroscopy (WDS) for the chemical analyses and (iv) temperature evolution during machining. We noted that at conventional cutting speed Vc 250 m/min, normal cutting tool wear types (adhesion, abrasion and built up edge) are clearly observed. However, for cutting speed Vc 250 m/min a severe wear is observed because the behavior of the WC 6Co grade completely changes due to a severe thermomechanical loading. Through all SEM micrographs, it is observed that this severe wear consists of several steps as: excessive deformation of WC 6Co bulk material and binder phase (Co) deformation and intragranular microcracking of WC, WC grain fragmentation and production of WC fragments in the tool/chip contact. Thus, the WC fragments accumulated at the tool/chip interface cause abrasion phenomena and pullout WC from tool surface. WC fragments contribute also to the microcutting and microploughing of chips, which lead to form a transferred layer at the tool rake face. Finally, based on the observations of the different wear micromechanisms, a scenario of WC 6Co damages is proposed through to a phenomenological model
author_names: Tchadja Kagnaya

Christine Boher

Laurence Lambert

Myriam Lazard

Thierry Cutard
title: Microstructural analysis of wear micromechanisms of WC 6Co cutting tools during high speed dry machining
year: 2014

abstract: Single crystal silicon carbide (SiC) is a new semiconductor material that has a great potential to be widely used. However, SiC is a kind of difficult to machine material due to its extreme hardness and brittleness. The present study investigated the machinability of single crystal SiC using dry laser and three different water laser co machining processes. The results indicate that using the hybrid laser waterjet micro machining to micro groove single crystal SiC can derive the clean and straight edges and thermal damage free grooves.
author_names: Shaochuan Feng

Chuanzhen Huang

Jun Wang

Hong Zhu

Peng Yao

Liang De Wang
title: A Comparison among Dry Laser Ablation and Some Different Water Laser Co Machining Processes of Single Crystal Silicon Carbide
year: 2016

abstract: The invention provides a method for manufacturing a gap wall of a semiconductor device. The method at least comprises the steps of forming a gate structure on a substrate; successively forming a first oxide layer and a second oxide layer on the surface of the gate structure; performing dry method on the second oxide layer until the second oxide layer becomes a film; and performing wet method etching on the residual second oxide layer and the first oxide layer, thereby reserving the second oxide layer and the first oxide layer on two sidewalls of the gate structure, and exposing the first oxide layer. The method for manufacturing the gap wall of the semiconductor device has functions of realizing relatively uniform thickness of the first oxide layer which residues on the top surface and the edge of the gate structure, effectively ensuring electrical performance and operation speed of the semiconductor device, and improving yield of the semiconductor device.
title: Method for manufacturing gap wall of semiconductor device
year: 2014

abstract: Next generation semiconductor devices and evolving opportunities in nanoelectronics present new challenges for fabrication technology. These include patterning and structure generation to define the smallest features, the deposition of metals, metal oxides, and other functional layers within challenging topographies, and development of the associated integration steps necessary to create working devices. Implementation of emergent technical solutions, however, is also subject to economic realities that require high volume process tools, reliability, and low cost per device layer. Changes in semiconductor process technology have to date largely been driven by the continued downscaling of device features to increase transistor density. Leading edge microprocessors are currently in production at the 45 nm device node. Device dimensions approaching 22 nm will be realized withinin the next several years. As manufacturing moves to smaller and smaller features, it is necessary to re evaluate process technology and decide if evolutions in current methods are sufficient or if technical and/or economic considerations will mandate change. Semiconductor fabrication relies on a combination of gas (or vapor) based techniques and liquid phase processing. Each has its advantages. Gas phase techniques allow for dry processing, complete wetting of surfaces, and the absence of surface tension, which in turn allows facile transport of reagents into confined geometries. Vapor phase transport of reagents and processing aids, however, are subject to species volatility constraints. Liquid phase processes have the advantage of species transport in solution, but the presence of the liquid phase can give rise to contamination issues, sluggish mass transport, and difficulties such as pattern collapse for the smallest device features. The latter arises from surface tension and associated capillary forces. These limitations are especially relevant for processing and fabrication at the nanoscale.
author_names: Alvin Horatio Romang

James J Watkins
title: Supercritical fluids for the fabrication of semiconductor devices: emerging or missed opportunities?
venue: Chemical reviews
year: 2010