Search query: double pulse test

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abstract: As the switching speed of power semiconductor devices increases gradually, the influence of parasitic parameters on the system electromagnetic compatibility increases significantly. The simulation based characterization of parasitic parameters is very important to predict their influences in power converters during the initial design phase. In this paper, parasitic parameters of the components in a double pulse test system are extracted in Q3D and validated with measurements. A comprehensive circuit co simulation model is then developed to determine the major parasitic parameters that affect the switching voltage spikes and the common mode currents in the IGBT module. The proposed characterization procedure and co simulation techniques can also be applied confidently to other complex power converters.
author_names: Jianzhen Qu

Xue Yuan

Qianfan Zhang

Shu-mei Cui
title: Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System
venue: 2020 15th IEEE Conference on Industrial Electronics and Applications (ICIEA)
year: 2020

abstract: Power loss modelling of magnetic components becomes increasingly important in the design of modern power electronic converters, especially in the case of higher switching frequencies enabled by emerging wide bandgap devices. While the modelling of the active power electronic devices is relatively mature and straightforward, the estimation of the passive magnetic component loss remains challenging, including both the core loss and winding (copper) loss. As indicated by recent studies, the accurate prediction of the core loss in power converters relies on rectangular voltage excited measurements. To characterize the core loss with high frequency rectangular excitations and dc biases, a Triple Pulse Test (TPT) has been proposed and is further extended in this paper. The TPT involves a discontinuous procedure and a bidirectional, half bridge excitation circuit that supplies transitional high rectangular voltage and high current. The importance and practical considerations of achieving closed dynamic BH loops are discussed. The proposed TPT is analogous to the common Double Pulse Test (DPT) for power electronics devices in terms of the testing circuit, the measurement instruments, and the discontinuous procedure. Moreover, the winding loss characterization can also be achieved by the TPT, given the winding loss can be very difficult to predict especially for randomly wound components where analytical equations cannot be applied accurately. Eventually, a complete loss dataset for one magnetic component design (i.e. same core material, shape and winding arrangement) can be built from TPT, which can be utilized to accurately model the inductor loss in power converter applications.
author_names: Jun-ying Wang

Xibo Yuan

Navid Rasekh
title: Triple Pulse Test (TPT) for Characterizing Power Loss in Magnetic Components in Analogous to Double Pulse Test (DPT) for Power Electronics Devices
venue: IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society
year: 2020

abstract: In this paper, the capacitive couplings between the terminals and the magnetic core of a medium voltage (MV) filter inductor are identified by using the double pulse test setup under high voltage and current excitation, instead of using the traditional impedance analyzer, which performs frequency sweep at low voltage and current magnitudes. The time domain current and voltage waveforms from the double pulse test setup are measured and further converted into the frequency domain signals by using the Fourier Transformation. From this, the terminal to core impedance between the inductor terminals and the magnetic core of MV inductors under high voltage and core saturation is obtained. The calculated impedance by using the measured data from DPT is compared with the measurements from an impedance analyzer, where the result indicates that the high voltage and current has almost no impacts on the change of the couplings between the inductor terminals and magnetic core of the studied MV filter inductors.
author_names: Hongbo Zhao

Dipen Narendra Dalal

Jannick Kjaer Jorgensen

Asger Bjorn Jorgensen

Xiongfei Wang

Bjorn Rannestad

Stig Munk-Nielsen
title: Identification of the Terminal to Core Couplings in Filter Inductors by Using Double Pulse Test Setup
venue: 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL)
year: 2020

abstract: In this paper, our study takes lithium iron phosphate battery as the research object. In order to solve the problem of deviation in HPPC test, we propose a double pulse test method which is suitable for the calculation of characteristic internal resistance(CIR) Secondly, three lithium iron phosphate 18650 batteries were selected for the whole life cycle accelerated aging experiment, and the CIR was calculated according to the above method. The change rule of CIR in the whole life cycle was obtained. The relationship between CIR and SOH was divided into three stages in the whole life cycle: SOH=1~0.5, SOH=0.5~0.35, SOH 0.35. Among them, there is a linear relationship between the CIR and SOH in the first stage, according to this relationship, a 280s double pulse test can be added to the charging process to estimate the SOH in practical application. In the second stage CIR increases rapidly and reaches the peak in a short time, wobbles near the peak after SOH<0.35. This phenomenon provides a reference for the utilization of second use lithium ion battery. It is recommended that second use batteries retired when the SOH=0.35.
author_names: Yiquan Wang

Bixiong Huang

Xiao Yan

Wenheng Lin

Gengjiong Wang

Zhongcai Liu
title: Study on Characteristic Internal Resistance of Lithium Batteries Based on Double Pulse Test
venue: RICAI 2019
year: 2019

abstract: Inverters and Totem pole type PFC (Power Factor Correction) include more than two transistors. In this circuits, short circuit current penetrating through high and low arms deteriorates turn on losses in some cases. How this event behaves is heavily affected by the recovery characteristics of a diode (body diode) parasitic to the transistor that is not driven, and therefore you must choose transistors with body diodes having excellent recovery features in a bridge circuit topology. The PrestoMOS series ROHM are most suitable for bridge circuits, because the transistors in the series are equipped with body diodes whose recovery attributes are top level in this application filed. This application note describes how excellent the switching and recovery behaviors of PrestoMOS by using the double pulse test results of the series.
title: Super Junction MOSFET series Double pulse test substantiated advantages of PrestoMOS
year: 2018

abstract: Switching characteristics of a 1200 V, 90 A SiC MOSFET in an asymmetric H bridge power converter are measured. Double pulse tests are carried out at different current and voltage levels. The experimental set up and procedure are explained in detail. The switching waveforms are used to obtain the voltage and current transition times of the MOSFET. The turn on and turn off energy losses are also calculated. Since these are influenced by layout of the power circuit, the power converter layout and its effect on the switching waveform are reported. The turn off energy loss is lower than the data sheet specified value, while the turn on energy loss is higher; the total loss is close to the data sheet value.
author_names: Syed Shahjahan Ahmad

G Narayanan
title: Double pulse test based switching characterization of SiC MOSFET
venue: 2017 National Power Electronics Conference (NPEC)
year: 2017

abstract: Today, WBG power devices are often expensive or sampled in limited quantities. In addition, intrinsic characteristics of WBG semiconductors enable WBG devices with very high voltage capability, for example, 10 kV SiC MOSFETs. Thus, due to the limited availability, high cost, and unique capability of devices, proper protection for WBG device DPT is important. The protection includes two categories: one is to protect DUT and DPT circuit, and the other is for the operator safety, especially when testing high voltage WBG devices. In summary, short circuit and overcurrent protection is critical for WBG based dynamic characterization.
author_names: Fei Wang

Zheyu Zhang

Edward A Jones
title: Protection design for double pulse test
year: 2018

abstract: The invention discloses a three level converter power unit double pulse test method. On the basis of a conventional two level topology converter double pulse test idea, upper and lower bridge arms of a three level converter power unit are decomposed reasonably, and comprehensive tests can be carried out on various conversion working conditions of the three level converter power unit, device switching time, absorption circuit overvoltage absorption effect and drive short circuit protection, and thus provided is a simple and effective test method for the development of a three level converter.
title: Three level converter power unit double pulse test method
year: 2015

abstract: The invention provides a double pulse test device for a power module. The device comprises an input power supply, a control module, a signal generator, an oscilloscope and a control power supply; the control module is provided with a first power input end, a second power input end, a first output end, a second output end and a third output end; the control module comprises a support capacitor, a first switch, a second switch and an inductor; the signal generator is connected with the control signal input end of the power module; the oscilloscope is used for being connected between the gate electrode and the drain electrode of a to be tested control switch tube of a to be tested bridge arm; and the control power supply is used for being connected between the gate electrode and the drain electrode of control switch tubes except the to be tested control switch tube of a to be tested bridge arm. According to the double pulse test device for a power module, performance test on the power module can be realized.
title: Double pulse test device for power module
year: 2012

abstract: Gallium Nitride (GaN) power devices with low switching and conduction losses can lead to superior power density in numerous power conversion applications. Their fast switching speeds, however, pose challenges in dynamic device characterization. The large parasitic inductances and contact impedances in conventional double pulse testers (DPTs) meant for Si devices, make them unsuitable for GaN characterization. GaN devices are directly soldered on to testers for minimizing parasitic effects. Furthermore, currently different testers are used for different types of device characterization, requiring the device under test to be repeatedly soldered to different boards. This paper proposes a multifunctional tester well suited for GaN devices and capable of completing all the dynamic characterization on the same board. The proposed tester is able to characterize: device turn on and off transition under hard and soft switching, dynamic Rdson, diode reverse recovery, and device reverse conduction voltage drop. The proposed tester has been implemented in hardware and the functions are validated with tests on a cascode GaN device. Some special properties of the cascode GaN device seen from these tests are highlighted. Detailed design procedures for selecting the critical components of the DPT are presented.
author_names: Tong Yao

Raja Ayyanar
title: A Multifunctional Double Pulse Tester for Cascode GaN Devices
venue: IEEE Transactions on Industrial Electronics
year: 2017