Search query: Tungsten Slurry CMP

Related papers:

abstract: Chemical mechanical polishing (CMP) is one of the important steps that involves during fabrication of semiconductor devices. This research highlights the importance of tungsten (W) polishing slurries consisting of a novel nonionic, heat activated FeSi nanocatalyst on the performance of W chemical mechanical polishing. The results obtained from the polishing data showed a higher W removal rate of 5910 A/min with a slurry consisting of FeSi nanocatalyst at a polishing temperature of 80 degC. The increase in W polishing rate using FeSi slurry was explained on the basis of formation of a thicker oxide layer (WO3) due to the interaction between the W surface and hydroxyl radicals *OH) generated via the reaction between FeSi and hydrogen peroxide at 80 degC. Higher *OH generation and increase in oxygen depth profile of W film were confirmed by UV Vis spectrometer and AES analysis, respectively. Compared to Fe(NO3)3 catalyst, the slurry with FeSi showed a higher static etch rate at 80 degC. Potentiodynamic polarization results obtained using FeSi slurry showed thicker WO3 passivation layer as compared to the slurry with Fe(NO3)3. The increase in the polishing rate of W CMP using slurry with FeSi nanocatalyst can be essentially attributed to the generation of much stronger oxidant *OH due to its increased catalytic effect at a high polishing temperature of 80 degC.
author_names: Maneesh Kumar Poddar

Heon-Yul Ryu

Nagendra Prasad Yerriboina

Yeon-Ah Jeong

Jung-Hwan Lee

Tae-Gon Kim

Jae-Hyun Kim

Jongdeok Park

Min-Gun Lee

Chang-Yong Park

Seong-jun Han

Jae-Gon Choi

Jin-Goo Park
title: Nanocatalyst induced hydroxyl radical *OH) slurry for tungsten CMP for next generation semiconductor processing
venue: Journal of Materials Science
year: 2019

abstract: Tungsten contact chemical mechanical polishing is a critical process in advanced node semiconductor device manufacturing that enables metal interconnection. It is essential for device performance, and any defects caused by the tungsten CMP process have a direct effect on product yield. Among these defects, the highest yield killer is microscratches. Microscratches are a well studied CMP produced defect; however, this paper provides a new look at controlling microscratches in a manufacturing environment. Specifically, the bulk tungsten slurry is the cause for nearly all scratches at tungsten contact CMP. This paper studies the effects of abrasive size on defect performance and suggests causes for variation in size of slurry particles outside of manufacturing variability. While tungsten removal rate is not affected by abrasive size, the defectivity performance relies heavily on the ability to remove large particles from suspension. Current filtration solutions are not completely effective in preventing large particles from contacting the wafer, so the burden falls on preventing their formation. Factors such as age of material, storage temperature and agitation induced agglomeration will be studied to characterize the effects on particle size. Volume manufacturing data will be used to support the claims made in this paper.
author_names: Bryan Egan

Hong Jin Kim
title: Effect of Controlling Abrasive Size in Slurry for Tungsten Contact CMP Process
year: 2019

abstract: Abstract In this study, a response surface methodology (RSM) coupled with a face center cube design (FCD) was used to optimize the three principal components (i.e. Fe(NO3)3, H2O2, and SiO2 abrasives) in polishing slurries for a W barrier chemical mechanical planarization (CMP) process. The experimental ranges of the three components were 10 50 ppm of Fe(NO3)3, 0.3 0.9 wt% of H2O2, and 1 5 wt% of SiO2 abrasives. Based on the experimental data from the FCD, the second order models for the material removal rate (MRR) of the W and Oxide films were fitted; these were determined to be statistically valid and reliable. We have achieved the optimal conditions for the three components where the MRR is maximized and the selectivity between the W and Oxide MRRs is 1. The predicted MRR and selectivity at the optimal conditions were well correlated with the results of a confirmation run, which was conducted by using the W barrier CMP process with W patterned wafers. In addition, we employed a particular RSM called dual response optimization in order to investigate the tradeoff between the MRR and selectivity. Based on the tradeoff information, process engineers can conduct the optimization of the three components more flexibly.
author_names: Jihoon Seo

Joo Hyun Kim

Myoung-Jae Lee

Keungtae You

Jinok Moon

Dong-Hee Lee

Ungyu Paik
title: Multi objective optimization of tungsten CMP slurry for advanced semiconductor manufacturing using a response surface methodology
year: 2017

title: SLURRY CONTAINING MULT OXDZER AND MIXED NANO ABRASIVES FOR TUNGSTEN CMP
year: 2017

abstract: Abstract Membrane separation based on ultrafiltration for the recovery of spent tungsten slurry from chemical mechanical polishing (CMP) process has been investigated. Five polymeric membranes with different molecular weight cut off (MWCO) i.e. 10 kDa PES, 30 kDa PES, 100 kDa PES, 50 kDa PS and 50 kDa PVDF were successfully applied. Flux analysis was conducted to study the fouling phenomena and the fouling effects on membrane surface were elucidated by means of SEM and AFM analyses. Almost steady fluxes were reached after about 60 min of filtration process. Meanwhile, the membrane fouling was mainly due to the formation of cake layer on the membrane surface leading to blockage of membrane pores. On top of that, 50 kDa PS membrane showed the highest potential in filtrating and concentrating the CMP spent tungsten slurry with 92% retention of silica particles and 42% retention of tungsten. Furthermore, it also achieved the lowest mean size particle of 126 nm in the retentate which were significantly different from that of the original spent tungsten slurry.
author_names: Nurhasikin Sanusi

Mohd Zulkhairi Mohd Yusoff

Ooi Boon Seng

Mohd Sabirin Marzuki

Ahmad Zuhairi Abdullah
title: Ultrafiltration based on various polymeric membranes for recovery of spent tungsten slurry for reuse in chemical mechanical polishing process
year: 2018

abstract: Abstract This research investigates abrasive particles agglomeration via interaction between O2 bubbles and slurry abrasives during the tungsten chemical mechanical polishing (W CMP) process. The abrasive particles in slurry were highly agglomerated due to higher volumes of O2 bubbles produced in the reaction between the catalyst Fe(NO3)3 and the oxidizer H2O2. Results obtained from a gas pressure sensor confirmed the generation of higher O2 volume via the decomposition of H2O2 at a high catalyst concentration and an increase in reaction temperature. The decomposed O2 volume rate at 80 degC was reported at the maximum value of 2.0 x 10 2 L/s at 120 ppm as compared to the moderate and minimum rates of 3.5 x 10 3 and 3.2 x 10 4 L/s for catalyst concentrations of 60 and 30 ppm, respectively. Images of O2 bubbles, captured using a high speed camera, exhibited subsequent enhancement in average O2 bubble diameters of 91, 427, and 503 mm at 25, 60, and 80 degC, respectively. Analysis of surface scans confirmed large abrasive particles contamination on the TEOS wafer with an increase in the O2 bubble flow rate and bubbling time. Also, large abrasive particles agglomeration was observed in the presence of O2 bubbles as compared to no bubbles, as measured by dynamic light scattering DLS. It is believed that higher hydrophilicity of abrasive particles with O2 bubbles increased the adhesive force between the abrasive particles and the in situ generated O2 bubbles. The high drag force generated during the collapse of O2 bubbles is essentially attributed a strong attractive force between the abrasive particles and the TEOS wafer which strongly binds with the abrasive particles and intensifies the defect level as particle agglomeration.
author_names: Maneesh Kumar Poddar

Nagendra Prasad Yerriboina

Myeong-Jun Kim
title: Investigation of particle agglomeration with in situ generation of oxygen bubble during the tungsten chemical mechanical polishing (CMP) process
venue: Microelectronic Engineering
year: 2019

abstract: Serious tungsten recess after tungsten chemical mechanical planarization (W CMP) is found to correlate to the high via resistance. Electrochemical alteration means oxidation and corrosion of tungsten surface, and recess is strongly dependent on via hold size. In this paper, the low corrosion W polishing slurry, alkali/acidic buffing slurry effect on tungsten plug are analyzed. The result shows that the low corrosion W slurry and acidic chemical can realize tungsten plug recess free.
author_names: Lei Zhang

Yefang Zhu

Jingxun Fang
title: Study and Improvement on Tungsten Recess in CMP Process
venue: 2019 China Semiconductor Technology International Conference (CSTIC)
year: 2019

abstract: With the developing of integrated circuit(IC) technique, improving of integration level, reducing of feature size and increasing the wafer size, the stringent requirements for global planarization during IC fabrication are raised. During chemical mechanical polishing(CMP) of multilevel interconnect for IC, there are obvious influence of the polishing quality on performances of the device.CMP slurry is one of the important factors of influencing the polishing quality. In this work, the stability of tungsten plug CMP slurry for IC multilevel interconnect was studied. Through experiment, interaction between the components in the CMP slurry was analyzed, and stable slurry with optimized polishing parameters to achieve higher removal rate were defined.
author_names: Ying Qian Jia

Xinhuan Niu

Li Li

Ning Li
title: The Study of Stability of Tungsten Plug CMP Slurry for IC Multilevel Interconnect
year: 2013

abstract: The present invention relates to a tungsten CMP polishing slurry composition comprises an abrasive and a polishing accelerator, said abrasive comprises colloidal silica dispersed in ultrapure water, the polishing accelerator comprises an aqueous solution of hydrogen peroxide, ammonium persulfate and ferric nitrate the slurry composition slurry discoloration problem does not occur, the etching selectivity is excellent, can be applied to a CMP process.
title: Cmp tungsten polishing slurry composition
year: 2012

abstract: The present invention relates to a tungsten polishing CMP slurry composition comprising a polishing agent and a polishing accelerator, wherein the abrasive agent comprises a colloidal silica dispersed in ultrapure water, the polishing accelerator, hydrogen peroxide water, wherein the ammonium persulfate and ferric nitrate, wherein the slurry composition, does not occur a problem of the slurry discoloration, excellent etching selectivity can be applied to the CMP step. .FIELD 1
author_names: paku ziegun

paku zinhiyon

imu ziehiyon

chiyo ziyonyon

ho chiyoe

hisopu huan
title: Tungsten polishing cmp slurry composition
year: 2012