Search query: 1.5um  traveling-wave semiconductor laser amplifier

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abstract: Spectral line broadening in semiconductor lasers is studied experimentally through the gain saturation characteristics of 1.5 mm InGaAsP traveling wave laser amplifiers. Wide signal gain spectrum under the injection of an intense saturating signal is measured using a weak probe signal. The saturated signal gain spectrum is found to coincide exactly with the unsaturated spectrum under a less biased condition, thus verifying that the semiconductor laser gain saturates homogeneously over the entire gain spectrum. Cross saturation characteristics between the two signal channels having identical input powers are also investigated and found to be in good agreement with theoretical calculations based on the homogeneous gain model. The degree of gain saturation is confirmed to be uniquely determined by the total output power from both channels.
author_names: Takaaki Mukai

Kyo Inoue

Tadashi Saitoh
title: Homogeneous gain saturation in 1.5 mm InGaAsP traveling wave semiconductor laser amplifiers
year: 1987

abstract: We have proposed a novel approximate analytical expression for saturation intensity for tapered traveling wave semiconductor laser amplifier structures. The application of this analytical expression of saturation intensity has been demonstrated by considering the effect of gain saturation on polarization sensitivity of two tapered amplifier structures, linear and exponential tapered amplifier structures. It is found that polarization sensitivity of the tapered amplifier structure is several decibels higher than that of passive tapered waveguides in unsaturated condition. Polarization sensitivity of the two tapered amplifier structures has also been investigated in a highly saturated condition. The combined effects of mode conversion and gain saturation on fundamental TE gain have also been investigated using the proposed analytical expression for saturation intensity.
author_names: Hooshang Ghafouri-Shiraz

P W Tan

W M Wong
title: A novel analytical expression of saturation intensity of InGaAsP tapered traveling wave semiconductor laser amplifier structures
venue: IEEE Photonics Technology Letters
year: 1998

abstract: This paper presents a theoretical and experimental study in terms of small signal gain, signal gain saturation, and noise characteristics of a 1.5 mm GaInAsP traveling wave amplifier (TWA) realized through the application of SiO x film antireflection coatings. This TWA, having a residual facet reflectivity of 0.04 percent, exhibits a wide, flat signal gain spectrum and a saturation output power of +7 dBm at a 20 dB signal gain. The TWA also has a noise figure of 5.2 dB, which is the smallest value reported for semiconductor laser amplifiers. The experimental results are confirmed to be in good agreement with the theoretical predictions based on the multimode traveling wave rate equations in conjunction with the photon statistic master equation analysis, which takes into account the amplifier material and device structural parameters. Signal gain undulation, saturation output power, and noise figure are also theoretically evaluated as functions of the facet reflectivity. The superior performance of the TWA demonstrates that the device is favorable for use in linear optical repeaters in fiber transmission systems.
author_names: Tadashi Saitoh

Takaaki Mukai
title: 1.5 um GaInAsP traveling wave semiconductor laser amplifier
year: 1987

abstract: The optical nonlinearity in a semiconductor laser gain medium is investigated through copropagating nearly degenerate four wave mixing (NDFWM) in a 1.5 mu m InGaAsP traveling wave laser amplifier (TWA) The FWM signal output powers vary symmetrically with the sign of probe detuning with respect to the pump frequency, while the pump and probe output powers vary asymmetrically. The NDFWM conversion efficiency from the probe input to the FWM signal output is a maximum of 8.3 dB around zero detuning and has positive gain in the range of +or 6 GHz. This demonstrates highly efficient nonlinear interaction due to both large optical gain and large third order susceptibility. The NDFWM efficiency is also investigated in connection with the TWA gain saturation characteristics and is found to be a maximum for operation around the saturation intensity of the TWA.
author_names: Takaaki Mukai

Tadashi Saitoh
title: Detuning characteristics and conversion efficiency of nearly degenerate four wave mixing in a 1.5 mu m traveling wave semiconductor laser amplifier
year: 1990

abstract: We developed a Time Domain Traveling Wave model to properly study the dynamics of a hybrid lasers realized by coupling a III V Reflective Semiconductor Optical Amplifier with a Silicon Photonics mirror providing a narrow effective reflectivity <10GHz) In free running operation mode, we show that for realistic values of the Henry factor stable single mode emission only occurs around the maximum of the reflectivity slope. Very interestingly for applications, in presence of optical feedback, we access a regime of ultra stability with respect to unwanted reflections or to self oscillations triggered by a photon photon resonance phenomenon.
author_names: Lorenzo Luigi Columbo

J T Bovington

Dominic Francis Siriani

Sebastian Romero-Garcia

Mariangela Gioannini
title: Time domain traveling wave model of optical feedback tolerant hybrid laser design for silicon photonics applications (Conference Presentation)
year: 2020

abstract: Nearly degenerate four wave mixing (NDFWM) in a traveling wave semiconductor laser amplifier is demonstrated by simultaneously injecting two lights of slightly different frequencies in the same direction. A new frequency light at an expected frequency for NDFWM is observed with the same order of output as that of the injected light. The output power ratio of the three beams is strongly dependent on the sign of the frequency detuning. Theoretical analysis, in which the carrier rate equation is coupled with nonlinear Maxwell's equations, explains the experimental results well. The observed behaviors are attributed to a unique third order nonlinearity stemming from saturation induced refractive index change in the semiconductor gain medium.
author_names: Kyo Inoue

Takaaki Mukai

Tadashi Saitoh
title: Nearly degenerate four wave mixing in a traveling wave semiconductor laser amplifier
year: 1987

abstract: Near traveling wave semiconductor laser amplifiers for amplification and detection of optical signals are discussed. Measurements of gain, responsivity, and bandwidth are presented and compared with theory. The system performance of the laser amplifier detector is evaluated by a digital transmission experiment. The importance of using low reflectivity amplifiers with high responsivity and weakly wavelength dependent devices is revealed by computer simulations. The various noise contributions of the laser amplifier detector are analyzed. Expected sensitivity values are given, and it is shown that there exists an optimum amplifier gain with respect to sensitivity.
author_names: Mats Gustavsson

Anders Karlsson

Lars Thylen
title: Traveling wave semiconductor laser amplifier detectors
year: 1990

abstract: Optical pulses with durations ranging from 0.49 to 21 ps are amplified by a traveling wave semiconductor laser amplifier. The pulse energy gain is determined by pulse energy only. The dependence of pulse energy gain on output pulse energy does not change in the pulse duration range. The saturation characteristics are successfully explained by a four level system model.<ETX>
author_names: Tadashi Saitoh

Haruyasu Itoh

Yoshio Noguchi

Shoichi Sudo

Takaaki Mukai
title: Pulse energy gain saturation in subpico and picosecond pulse amplification by a traveling wave semiconductor laser amplifier
venue: IEEE Photonics Technology Letters
year: 1989

abstract: All optical frequency conversion over the entire gain spectrum of a traveling wave semiconductor laser amplifier is analyzed by numerical solution of a nonlinear wave equation system. The wavelength dependence of the gain coefficient g, the linewidth enhancement factor alpha the differential gain dg/dN, and the gain saturation effect are contained in the model. The method yields a high conversion efficiency and a converted signal output power up to 10 dBm is obtainable. It is shown that the input signal power can vary by three orders of magnitude with nearly no degradation of the conversion efficiency. By means of the input powers, the conversion efficiency can be maximized. The dependence of the conversion efficiency is analyzed for fixed input powers. Simultaneous conversion of an optical data signal to several wavelengths is analyzed. The requirements for the output filter are outlined.
author_names: Nikolaus Schunk
title: All optical frequency conversion in a traveling wave semiconductor laser amplifier
year: 1991

abstract: An equivalent lumped element electric circuit model for traveling wave semiconductor laser amplifier has been developed using the rate equation for carriers. SPICE simulation of the circuits gives results in close agreement with the experimental data and values from sophisticated analyses. The modulation bandwidth and transient response were examined by including parasitic elements in the intrinsic model. (c) 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1558 1561, 2007; Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.22483
author_names: Abhirup Das Barman

Ipsita Sengupta

P K Basu
title: A simple spice model for traveling wave semiconductor laser amplifier
year: 2007