Search query: Towards Oxide Electronics: A Roadmap

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abstract: At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four year project, named Towards Oxide Based Electronics (TO BE) that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
author_names: Merrimack Coll

Josep Fontcuberta

Martina Althammer

Manuel Bibes

Hans Boschker

Amaia Calleja

M Cuoco

Regina Dittmann

Brahim Dkhil

Ismail El Baggari

Marco Fanciulli

Ignasi Fina

Enzo Fortunato

Carles Frontera

Sebastian T B Goennenwein

C G Granqvist

Julie Grollier

Anders Hagfeldt

Gervasi Herranz

Kazuhiro Hono

Evert P Houwman

Mark Huijben

Alexei Kalaboukhov

David J Keeble

Gerhard Ing Grad Koster

Lena F Kourkoutis

Jeremy Levy

Monica Lira-Cantu

Judith L MacManus-Driscoll

J Mannhart

Stephan Menzel

Thomas Mikolajick

Mari Napari

Gunnar A Niklasson

Charles Paillard

Sridhar Panigrahi

Guus Rijnders

Pablo Sanchis

Sandro Sanna

Darrell G Schlom

Uwe Schroeder

Anne Siemon

Matjaz Spreitzer

Hiroyuki Sukegawa

R Tamayo

Jeroen van den Brink

N H Pryds

Fabio Miletto Granozio
title: Towards Oxide Electronics: a Roadmap
venue: Applied Surface Science
year: 2019

abstract: Spins confined in Metal Oxide Silicon (MOS) quantum dot devices are promising qubits in a quantum processor, demonstrating long coherence times, a large valley splitting, and coherent interactions with donor qubits. Furthermore, the mature fabrication infrastructure of the CMOS industry offers a tantalizing roadmap towards scaling to extremely large quantum systems on a single silicon chip. Despite the incredible advances in materials and fabrication developed by the classical CMOS industry and continued by the silicon quantum electronics community, many challenges remain in building a silicon quantum processor. One of the biggest challenges impeding the scaling of large quantum dot systems is the presence of disorder and shallow electron traps at the Si/SiO2 interface. The purpose of this thesis is to illuminate mechanisms of disorder at the Si/SiO2 interface relevant to quantum dot devices, develop a framework for understanding and quantifying shallow electron traps in terms of electron spin resonance and transport measurements, and to pave a path forward for scaling MOS quantum dot devices. This thesis is organized into three sections: first, we develop a fabrication process in silicon MOSFETs yielding a low disorder Si/SiO2 interface in order to leverage this process as a platform for fabricating low disorder quantum dot devices. One of the challenges in working with silicon oxide is that high energy processes and mobile ionic contamination during the fabrication process can create electron traps and disorder at the Si/SiO2 interface. Using the low temperature (4.2 K) electron mobility as a proxy for the Si/SiO2 interface quality, we study the effect of various processing parameters on the Si/SiO2 interface disorder and ultimately arrive at a fully optimized process yielding the highest reported mobility (23,000 cm/Vs) thin oxide =30 nm) silicon MOSFET. Secondly, we study the annealing of shallow electron traps created by electronbeam (e beam) lithography. E beam lithography is a necessary tool in defining nanoiii scale electrostatic gates which define the quantum dot potential, but the high energy electrons and photons created in the process create electron traps at the interface. We directly probe shallow electron traps using electron spin resonance (ESR) and demonstrate that 1) a standard forming gas anneal is sufficient to passivate electron traps created by the e beam exposure, and 2) that our lowest temperature ESR measurements agree with transport measurements of the devices' percolation threshold, demonstrating agreement between two independent methods of characterizing the Si/SiO2 interface. Finally, leveraging the above process optimizations, we fabricate and characterize a low disorder double quantum dot device. We demonstrate agreement between the dots' charging energy and lithographic size, concluding that our dots are lithographically defined and not dominated by random disorder. Charge sensing measurements indicate regular quantum dot transitions over a wide parameter range down to the single electron regime, with evidence of few defects in the vicinity of the quantum dots, and the controllable formation of a quantum double dot. Noise spectroscopy measurements of the dot indicate a 1/f like power spectral density that is comparable in magnitude to other Si quantum dot devices measured at 300 mK. Finally, magneto spectroscopy measurements of the first and second electron transitions yield a valley splitting of 110+ 26 meV, large enough to support high fidelity spin selective operations. With this work, we demonstrate a method of fabricating low disorder, highmobility silicon MOSFETs, a framework for studying disorder in quantum dot devices in the low electron density regime, and a promising platform for MOS qubits in a lowdisorder quantum dot device architecture.
author_names: Jin-Sung Kim
title: Development and Characterization of Low Disorder Metal Oxide Silicon Quantum Dot Devices
year: 2018

abstract: Abstract Fabrication of thin and flexible crystalline silicon solar cells based on single junction concept is reported with detailed investigations on each step of the production flow chain. With the aim of minimizing material use/wastage as per the international technology roadmap for photovoltaic (ITRPV) which is also directly related to the device cost, efforts have been made to introduce thin ~30 um) c Si wafers instead of a conventional 180 um wafer to fabricate single junction solar cells. Due to the introduction of thin ~30 um) c Si wafer, the device becomes flexible, which is also an additional benefit towards the development of future roll to roll electronics. In order to address better carrier collection in thin silicon as well as light management, measures have been taken by introducing an indium tin oxide (ITO) layer both on top and at the bottom. The influence of this ITO layer along with back Al contact toward the cell efficiency has been discussed. X ray diffraction (XRD) analysis has been carried out to investigate microstrain and dislocation density related changes in the thin wafer, which are known to have influence on the photoconversion efficiency. Under 1 Sun illumination, current voltage characteristics and external quantum efficiency were measured and found to be promising.
author_names: Ashutosh Kumar Dikshit

Nabin Chandra Mandal

Sukanta Bose

Nillohit Mukherjee

P Chakrabarti
title: Optimization of back ITO layer as the sandwiched reflector for exploiting longer wavelength lights in thin and flexible (30 um) single junction c Si solar cells
venue: Solar Energy
year: 2019

abstract: Improvement of the energy efficiency is an imperative need for electronics towards the Internet of Things (IoT) In this study, we investigated the performance limits of n type sub 10 nm monolayer (ML) ReS2 metal oxide semiconductor FETs (MOSFETs) using ab initio quantum transport simulation. Due to the anisotropic nature of the band structure, the zigzag directed devices perform better than the armchair directed devices. The zigzag directed sub 10 nm ML ReS2 MOSFETs show a low subthreshold swing down to 52 mV dec 1 and a high on current up to 486 mA mm 1. When compared with the international technology roadmap for semiconductors (ITRS) 2013 edition, the delay time and power delay product of the zigzag devices have been found to fulfill the requirements for low power applications until the gate length is scaled down to 3 and 1 nm, respectively. The excellent electrostatics, large on current, and ultra low energy consumption make ReS2 a promising candidate for future electronics in the coming IoT era.
author_names: Ruge Quhe

Jianxiu Chen

Jing Lu
title: A sub 10 nm monolayer ReS2 transistor for low power applications
year: 2019

abstract: The developments in electronics technology push the invention of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) towards smaller physical dimension with improvements in both quality and performance. In this paper, design, fabrication and simulation of electrical characteristics of 14nm La<inf>2</inf>O<inf>3</inf>/WSi<inf>2</inf>NMOS is presented. The fabrication and simulation process of device were performed by using Virtual Wafer Fabrication (VWF) Silvaco TCAD Tools, which consists of ATHENA and ATLAS. The designed device was optimized using Taguchi Method that involves orthogonal arrays and analysis of variance (ANOVA) The original results before optimization process for V<inf>TH</inf>is 0.212648V (7.5% lower than the targeted value) and I<inf>OFF</inf> is 3.73851x10<sup> 9</sup> A/mm while the optimized results for V<inf>TH</inf> is 0.233321 V (1.44 higher than the targeted value) and I<inf>OFF</inf>is 4.732375x10<sup> 11</sup> A/Dm which fulfilled the targets based on International Technology Roadmap for Semiconductors (ITRS) 2013. The Taguchi optimization method yields a significantly lower I<inf>OFF</inf> with an improved I<inf>ON</inf>/I<inf>OFF</inf> ratio by a factor of 25.
author_names: Shee Keat Mah

Ibrahim Ahmad

Pin Jern Ker

K P Tan

Z A Noor Faizah
title: Modeling, Simulation and Optimization of 14nm High K/Metal Gate NMOS with Taguchi Method
venue: 2018 IEEE International Conference on Semiconductor Electronics (ICSE)
year: 2018

abstract: Many advances in Complementary Metal Oxide Semiconductor (CMOS) technology (deep sub micron feature scales, GHz frequencies, and Silicon On Insulator (SOI)fabrication) have been made possible by increases in the packaging density of electronics. These advances began with the introduction of very large scale integration (VLSI) The combination of increased power dissipation and packaging density led to substantial growth in the chip and system heat fluxes, as well as the amplified complexity in electrical signal integrity and mechanical stackup design in the recent years, particularly in high end computers. With the trend towards miniaturization, heat removal has become a major bottleneck in product development, especially, in low profile systems, telecom servers and blades. According to ITRS roadmap, power dissipation of high performance single chip packages is predicted to be in 218 288 W range, posing a serious challenge with no proven air cooled solutions to exist.
author_names: Ali Heydari

Vadim Gektin
title: Thermal and electro mechanical challenges in design and operation of high heat flux processors
venue: The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena In Electronic Systems (IEEE Cat. No.04CH37543)
year: 2004

abstract: Oxide electronic materials provide a plethora of possible applications and offer ample opportunity for scientists to probe into some of the exciting and intriguing phenomena exhibited by oxide systems and oxide interfaces. In addition to the already diverse spectrum of properties, the nanoscale form of oxides provides a new dimension of hitherto unknown phenomena due to the increased surface to volume ratio. Oxide electronic materials are becoming increasingly important in a wide range of applications including transparent electronics, optoelectronics, magnetoelectronics, photonics, spintronics, thermoelectrics, piezoelectrics, power harvesting, hydrogen storage and environmental waste management. Synthesis and fabrication of these materials, as well as processing into particular device structures to suit a specific application is still a challenge. Further, characterization of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap on 'oxide electronic materials and oxide interfaces' This roadmap envisages the potential applications of oxide materials in cutting edge technologies and focuses on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide based devices. The contents of this roadmap will highlight the functional and correlated properties of oxides in bulk, nano, thin film, multilayer and heterostructure forms, as well as the theoretical considerations behind both present and future applications in many technologically important areas as pointed out by Venkatesan. The contributions in this roadmap span several thematic groups which are represented by the following authors: novel field effect transistors and bipolar devices by Fortunato, Grundmann, Boschker, Rao, and Rogers; energy conversion and saving by Zaban, Weidenkaff, and Murakami; new opportunities of photonics by Fompeyrine, and Zuniga Perez; multiferroic materials including novel phenomena by Ramesh, Spaldin, Mertig, Lorenz, Srinivasan, and Prellier; and concepts for topological oxide electronics by Kawasaki, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action 'towards oxide based electronics' which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies. In summary, we do hope that this oxide roadmap appears as an interesting up to date snapshot on one of the most exciting and active areas of solid state physics, materials science, and chemistry, which even after many years of very successful development shows in short intervals novel insights and achievements.
author_names: Michael Lorenz

Mamidanna Sri Ramachandra Rao

Thirumalai Venkatesan

Elvira Fortunato

Pedro Barquinha

Rita Branquinho

Daniel Collet Salgueiro

Rodrigo Martins

Emanuel Carlos

Ao Liu

Fukai Shan

Marius Grundmann

Hans Boschker

Joynarayan Mukherjee

Manisha Priyadarshini

Nandita DasGupta

David J Rogers

Ferechteh Teherani

Eric Sandana

Philippe Bove

Kevin J Rietwyk

Arie Zaban

Angelika Veziridis

Anke Weidenkaff

Miryala Muralidhar

Masato Murakami

Stefan Abel

Jean Fompeyrine

Jesus Zuniga-Perez

Ramamoorthy Ramesh

Nicola A Spaldin

Sergey A Ostanin

Vitaliy B Borisov

Ingrid Mertig

V V Lazenka

Gopalan Srinivasan

Wilfrid Prellier

Masaki Uchida

Masashi Kawasaki

Rossitza Pentcheva

Philipp Gegenwart

Fabio Miletto Granozio

Josep Fontcuberta

N H Pryds
title: The 2016 oxide electronic materials and oxide interfaces roadmap
year: 2016

abstract: Abstract Twisting monotonic and fatigue experiments were conducted on multi layered films of Ag alloy based indium tin oxide (ITO) deposited on polyethylene terephthalate (PET) In the twisting tests, crack development and electrical resistance were monitored in situ. Cracks initiated at an angle of 39deg 1.7deg and propagated towards the direction of the sample length. Two sets of experiments were performed; the first set of experiments was conducted to study the effect of twisting angle and temperature on the film's electromechanical performance. The other set of experiments was conducted to study the effect of temperature in the absence of cyclic twisting deformation. The change in electrical resistance increased with number of twisting cycles and twisting angle. In addition, the highest change in electrical resistance was observed for samples subjected to cyclic fatigue at 100 degC, which is attributed to crack growth and oxidation of the Ag alloy layer. The cracks were observed to initiate not only from coating defects but also from edge defects. Development of cracks is accelerated due to the combined effects of the external repeated stress and temperature. Therefore, it is suggested that controlling temperature when using ITO/Ag alloy/ITO thin film under mechanical stress is important for electrical device performance; temperatures in both fabrication and use should not exceed 50 degC.
author_names: D W Mohammed

Rayan B M Ameen

Konstantinos A Sierros

James Bowen

Stephen N Kukureka
title: Twisting fatigue in multilayer films of Ag alloy with indium tin oxide on polyethylene terephthalate for flexible electronics devices
year: 2018

abstract: Globally, the demand for improved health care delivery while managing escalating costs is a major challenge. Measuring the biomagnetic fields that emanate from the human brain already impacts the treatment of epilepsy, brain tumours and other brain disorders. This roadmap explores how superconducting technologies are poised to impact health care. Biomagnetism is the study of magnetic fields of biological origin. Biomagnetic fields are typically very weak, often in the femtotesla range, making their measurement challenging. The earliest in vivo human measurements were made with room temperature coils. In 1963, Baule and McFee (1963 Am. Heart J. 55 95 6) reported the magnetic field produced by electric currents in the heart 'magnetocardiography' and in 1968, Cohen (1968 Science 161 784 6) described the magnetic field generated by alpha rhythm currents in the brain 'magnetoencephalography' Subsequently, in 1970, Cohen et al (1970 Appl. Phys. Lett. 16 278 80) reported the recording of a magnetocardiogram using a Superconducting QUantum Interference Device (SQUID) Just two years later, in 1972, Cohen (1972 Science 175 664 6) described the use of a SQUID in magnetoencephalography. These last two papers set the scene for applications of SQUIDs in biomagnetism, the subject of this roadmap. The SQUID is a combination of two fundamental properties of superconductors. The first is flux quantization the fact that the magnetic flux in a closed superconducting loop is quantized in units of the magnetic flux quantum, ?0 h/2e, 2.07 x 10 15 Tm2 (Deaver and Fairbank 1961 Phys. Rev. Lett. 7 43 6, Doll R and Nabauer M 1961 Phys. Rev. Lett. 7 51 2) Here, h is the Planck constant and e the elementary charge. The second property is the Josephson effect, predicted in 1962 by Josephson (1962 Phys. Lett. 1 251 3) and observed by Anderson and Rowell (1963 Phys. Rev. Lett. 10 230 2) in 1963. The Josephson junction consists of two weakly coupled superconductors separated by a tunnel barrier or other weak link. A tiny electric current is able to flow between the superconductors as a supercurrent, without developing a voltage across them. At currents above the 'critical current' (maximum supercurrent) however, a voltage is developed. In 1964, Jaklevic et al (1964 Phys. Rev. Lett. 12 159 60) observed quantum interference between two Josephson junctions connected in series on a superconducting loop, giving birth to the dc SQUID. The essential property of the SQUID is that a steady increase in the magnetic flux threading the loop causes the critical current to oscillate with a period of one flux quantum. In today's SQUIDs, using conventional semiconductor readout electronics, one can typically detect a change in corresponding to 10 6 ?0 in one second. Although early practical SQUIDs were usually made from bulk superconductors, for example, niobium or Pb Sn solder blobs, today's devices are invariably made from thin superconducting films patterned with photolithography or even electron lithography. An extensive description of SQUIDs and their applications can be found in the SQUID Handbooks (Clarke and Braginski 2004 Fundamentals and Technology of SQUIDs and SQUID Systems vol I (Weinheim, Germany: Wiley VCH) Clarke and Braginski 2006 Applications of SQUIDs and SQUID Systems vol II (Weinheim, Germany: Wiley VCH) The roadmap begins (chapter 1) with a brief review of the state of the art of SQUID based magnetometers and gradiometers for biomagnetic measurements. The magnetic field noise referred to the pick up loop is typically a few fT Hz 1/2, often limited by noise in the metallized thermal insulation of the dewar rather than by intrinsic SQUID noise. The authors describe a pathway to achieve an intrinsic magnetic field noise as low as 0.1 fT Hz 1/2, approximately the Nyquist noise of the human body. They also descibe a technology to defeat dewar noise. Chapter 2 reviews the neuroscientific and clinical use of magnetoencephalography (MEG) by far the most widespread application of biomagnetism with systems containing typically 300 sensors cooled to liquid helium temperature, 4.2 K. Two important clinical applications are presurgical mapping of focal epilepsy and of eloquent cortex in brain tumor patients. Reducing the sensor to brain separation and the system noise level would both improve spatial resolution. The very recent commercial innovation that replaces the need for frequent manual transfer of liquid helium with an automated system that collects and liquefies the gas and transfers the liquid to the dewar will make MEG systems more accessible.
author_names: Rainer Korber

Jan-Hendrik Storm

Hugh C Seton

Jyrki P Makela

Ritva Paetau

Lauri Parkkonen

Christoph Pfeiffer

B Riaz

Justin F Schneiderman

Hui Dong

Seong-min Hwang

Lixing You

Ben A Inglis

John M Clarke

Michelle A Espy

Risto J Ilmoniemi

Per E Magnelind

Andrei Matlashov

Jaakko O Nieminen

P L Volegov

Koos C J Zevenhoven

Nora Hofner

Martin Burghoff

Keiji Enpuku

S Y Yang

J J Chieh

Jukka Knuutila

Petteri Laine

Jukka Nenonen
title: SQUIDs in biomagnetism: a roadmap towards improved healthcare
year: 2016

abstract: Twisting monotonic and fatigue experiments were conducted on multi layered films of Agalloy based indium tin oxide (ITO) deposited on polyethylene terephthalate (PET) In the twisting tests, crack development and electrical resistance were monitored in situ. Cracks initiated at an angle of 39deg 1.7deg and propagated towards the direction of the sample length. Two sets of experiments were performed; the first set of experiments was conducted to study the effect of twisting angle and temperature on the film's electromechanical performance. The other set of experiments was conducted to study the effect of temperature in the absence of cyclic twisting deformation. The change in electrical resistance increased with number of twisting cycles and twisting angle. In addition, the highest change in electrical resistance was observed for samples subjected to cyclic fatigue at 100 degC, which is attributed to crack growth and oxidation of the Ag alloy layer. The cracks were observed to initiate not only from coating defects but also from edge defects. Development of cracks is accelerated due to the combined effects of the external repeated stress with temperature. Therefore, it is suggested that controlling temperature when using ITO/Ag alloy/ITO thin film under mechanical stress is important for electrical device performance; temperatures in both fabrication and use should not exceed 50 degC.
author_names: R B Ameena

K A Sierrosb

J Bowenc

S N Kukurekaa
title: Twisting fatigue in multilayer films of Ag alloy with indium tin oxide on polyethylene terephthalate for flexible electronics devices
year: 2017