Search query: IGBT junction temperature

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abstract: Active short circuit and locked rotor modes are common abnormal operations in new energy vehicles. The IGBT junction temperature measurement for these two operating conditions is a challenging problem due to the unexpected large current and the asymmetric operation of semiconductor chips. In addition, different cooling flow rates have a significant influence on the heat dissipation, which will also have an impact on the building of the thermal model. Based on these difficulties, a modified Foster thermal network under active short circuit and locked rotor modes has been presented considering different cooling conditions. The power loss models of the semiconductor chip under abnormal conditions are developed and a modified Foster thermal network based on the NTC temperature sensor is proposed. The model can be adapted to different cooling conditions since the thermal impedance fluctuates slightly at different cooling flow rates. The proposed thermal model is verified with inverter application under active short circuit and locked rotor modes and the experimental performance shows good accuracy compared with the infrared camera measurement results.
author_names: Yuan Zhu

Mingkang Xiao

Xiezu Su

Ke Lu

Zhihong Wu

Gang Yang
title: IGBT Junction Temperature Measurement Under Active Short Circuit and Locked Rotor Modes in New Energy Vehicles
venue: IEEE Access
year: 2020

abstract: Infrared measurements are used to assess the measurement accuracy of the peak gate current <inline formula> <tex math notation="LaTeX"$I_{\rm{GPeak}/tex math>/inline formula> method for Insulated gate bipolar transistor (IGBT)junction temperature measurement. Single IGBT chips with the gate pad in both the center and the edge are investigated, along with paralleled chips, as well as chips suffering partial bondwire lift off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current <inline formula><tex math notation="LaTeX"$V_{\rm{CE(low)/tex math>/inline formula> In all cases, the <inline formula><tex math notation="LaTeX"$I_{\rm{GPeak}/tex math>/inline formula> method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift off. In a paralleled IGBT configuration with nonnegligible temperature disequilibrium between chips, the <inline formula><tex math notation="LaTeX" $I_{\rm{GPeak}/tex math>/inline formula> method delivers a measurement based on the average temperature of the gate pads.
author_names: Nick Baker

Laurent Dupont

Stig Munk-Nielsen

Francesco Iannuzzo

Marco Liserre
title: IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current
venue: IEEE Transactions on Power Electronics
year: 2017

abstract: Based on the features of different timescales and according to the characteristics of loss and heat transfer under those cases, a multi timescale prediction model (MTPM) of insulated gate bipolar transistor (IGBT) junction temperature is presented in this paper, including a short duration transient microsecond prediction model based on the semiconductor physical model and the theorem of heat absorption and emission, an unsteady millisecond scale prediction model based on the equivalent switching loss set in databook and the order reduced thermal model, and a steady second scale prediction model based on the characteristics of a fundamental wave fluctuating periodically at junction temperature and the equivalent first order thermal model. An experimental system has been designed and established for the verification of the proposed MTPM of IGBT junction temperature according to a corresponding timescale. The comparison result shows that the error between simulation and experiment is less than 5% and simulation efficiency is significantly improved.
author_names: Binli Liu

Fei Xiao

Yifei Luo

Yongle Huang

Youxing Xiong
title: A Multi timescale Prediction Model of IGBT Junction Temperature
venue: IEEE Journal of Emerging and Selected Topics in Power Electronics
year: 2019

abstract: Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic device in converters. The junction temperature monitoring of IGBT is critical for avoiding sudden failures and health management of converters. However, the existing monitoring methods have some disadvantages including low feasibility of on line measurement, intrusiveness and slow response. A novel on line IGBT junction temperature measurement method based on on state voltage drop is proposed in this paper. IGBT junction temperature has a strong influence on IGBT on state voltage drop. This paper considered the influence of IGBT current and measurement circuit temperature. The method proposed can realize on line monitoring of IGBT junction temperature with low cost and simple circuit structure. The experimental results validate the feasibility of the proposed technique.
author_names: Yanyong Yang

Qinghao Zhang

Pinjia Zhang
title: A Novel On line IGBT Junction Temperature Measurement Method Based on On state Voltage Drop
venue: 2019 22nd International Conference on Electrical Machines and Systems (ICEMS)
year: 2019

abstract: A method for in situ high bandwidth junction temperature estimation of Insulated Gate Bipolar Transistors (IGBTs) is introduced. The method is based on the acquisition of the gate voltage plateau during turn on, which can be directly related to the junction temperature. This allows fast over temperature protection of the power device and thus enables operation at the boundary of the device safe operation area. Firstly, this paper discusses the underlying physical mechanisms. Secondly, the temperature sensitivity and the impact of interferences over the entire operation range of an IGBT. Finally, a sensing circuitry is presented, which allows accurate gate voltage plateau sensing every switching period as well as an easy integration into the gate driver. The performance of the proposed method is experimentally demonstrated over a wide range of temperatures and currents.
author_names: Christoph H van der Broeck

Alexander Gospodinov

Rik W De Doncker
title: IGBT junction temperature estimation via gate voltage plateau sensing
venue: 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2017

abstract: In the article, a new method to improve the accuracy of the insulated gate bipolar transistor (IGBT) junction temperature computations in the piecewise linear electrical circuit simulation (PLECS) software is proposed and described in detail. This method allows computing the IGBT junction temperature using a nonlinear compact thermal model of this device in PLECS. In the method, a nonlinear compact thermal model of the IGBT is used, which considers the dependence of thermal resistance on the junction temperature. The usefulness of the method is experimentally verified, and it is confirmed that it increases the accuracy of the computations and shortens their time. The differences between the measured and computed characteristics are discussed. The application of the developed method for computations resulted in a significant reduction of their error to only a few percent. The developed method can be applied in the system level simulations of the power electronics converters.
author_names: Pawel Gorecki

D Wojciechowski
title: Accurate Computation of IGBT Junction Temperature in PLECS
venue: IEEE Transactions on Electron Devices
year: 2020

abstract: Distributed systematic grid connected inverter practice needs to improve insulated gate bipolar transistor (IGBT) stability to ensure the safe operation. This study is to ensure the safety and reliability operation of the IGBT module in symmetry to meet the reliable and stable distributed systematic grid connected inverter practice and the junction temperature is a parameter to assess its operating state. It is difficult to accurately acquire the IGBT junction temperature to be solved by a single method of combining the test and the modeling. The saturation voltage drop or collector current and module junction temperature data under different power cycles are measured by the power cycle test and the single pulse test. The improved chicken swarm optimization increases the chickens diversity and self learning ability. The prediction model of the improved chicken swarm optimization support vector machine is proposed to forecast the module junction temperature. The result showed to compare with the particle swarm optimization support vector machine model and chicken swarm optimization support vector machine model and showed the coincidence degree between the proposed model prediction value and the true value is higher. The mean absolute error ratio indicates the proposed model has a smaller error and a better prediction performance. The proposed model has a positive impact on improving the distributed systematic grid connected inverter industrial development and promotes the new energy usage.
author_names: Zhengping Wang

Guoyi Li

Ming-Lang Tseng

Wai Peng Wong

Bo-Ying Liu
title: Distributed Systematic Grid Connected Inverter Using IGBT Junction Temperature Predictive Control Method: An Optimization Approach
venue: Symmetry
year: 2020

abstract: The insulated gate bipolar transistor (IGBT) one of the most vulnerable component, is one of the most precious central component in the converter interior. High junction temperature will lead to device failure, which is the main reason of failure of power electronic system. Therefore, on line high precision measurement of IGBT module junction temperature is the basis of life prediction and reliability evaluation of high power power conversion equipment. In this paper, the principle of IGBT junction temperature extraction and the latest development of related technologies are summarized. In particular, the working principle and shortcomings of temperature sensitive electrical parameter (TSEP) method are summarized. The change of junction temperature will affect the inter electrode capacitance in the internal structure of IGBT, which will cause the change of temperature sensitive electrical parameters. The single temperature sensitive electrical parameter method is easily affected by IGBT structure and inter electrode capacitance. This paper presents an algorithm for high precision on line detection of IGBT junction temperature. The parameter types are optimized by stepwise regression and the model is established accordingly. In this paper, IGBT: FF50R12RT4 is used as the experimental equipment. By comparing the junction temperature model established based on multiple linear stepwise regression algorithm with the junction temperature model based on traditional temperature sensitive electrical parameters, it is proved that the algorithm has better fitting degree and precision, and the algorithm can be used for high precision online extraction of junction temperature.
author_names: Lingfeng Shao

Y Hu

Guoqing Xu
title: A High Precision On Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm
venue: IEEE Access
year: 2020

abstract: An electrical method for junction temperature measurement of MOS gated power semiconductor devices is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an insulated gate bipolar transistor or MOSFET during turn on. This voltage is directly proportional to the peak gate current, and fluctuates with temperature due to the temperature dependent resistance of the internal gate resistance. Primary advantages of the method include an immunity to load current variation, and a good linear relationship with temperature. A measurement circuit can be integrated into a gate driver with no disruption to operation and allows autonomous measurements controlled directly via the gate signal. Advantages and disadvantages of the method are discussed.
author_names: Nick Baker

Stig Munk-Nielsen

Francesco Iannuzzo

Marco Liserre
title: IGBT Junction Temperature Measurement via Peak Gate Current
venue: IEEE Transactions on Power Electronics
year: 2016

abstract: In this paper, an online monitoring method of IGBT junction temperature based on Vce measurement is proposed. An on state voltage measurement circuit (OVMC) with high accuracy and high blocking voltage capability is designed. The relationships between Vce(on) Tj and Ic are found based on the method of solving regression problems and a three phase in vertor is designed to verify the temperature monitoring method. The method proposed in this paper can be easily extend to a complex system and can provide a novel approach for junction temperature monitor.
author_names: Han Cao

Puqi Ning

Tianshu Yuan

Xuhui Wen
title: Online Monitoring of IGBT junction Temperature Based on Vce Measuremnt
venue: 2019 22nd International Conference on Electrical Machines and Systems (ICEMS)
year: 2019