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abstract: Semiconductor nanowires are one of the most fascinating topics over the past few decades. As miniaturized coherent light sources, semiconductor nanowires have been attracting tremendous attention in recent years for scientific and technological interest as potential ultra compact, low cost, high efficiency, and low power consumption. Among different types of lasers, one dimensional nanowires are of great interest as a promising material for next generation nanophotonics and nanoelectronics applications due to their unique optical and electrical properties. Semiconductor nanowire lasers with single mode output are vital in a variety of practical applications ranging from signal processing, spectroscopy, displays, optical sensing, on chip communications, and biological studies. This article reviews the basic technology and research progress of single mode semiconductor nanowire lasers. Afterward, the key methods and development of the different types of coupling to achieved single mode laser output are elaborated. Finally, the challenges faced by each scheme are summarized.
author_names: Salman Ullah

Sijie Pian

Fangbo Dai

Yilun Wang

Yaoguang Ma

Qing Yang
title: Single Mode Semiconductor Nanowire Lasers With Coupled Cavities
venue: Frontiers in Chemistry
year: 2020

abstract: Author(s) Kim, Hyunseok Advisor(s) Huffaker, Diana L Abstract: Chip scale integrated light sources are a crucial component in a broad range of photonics applications. III V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice mismatched substrates including silicon. However, their practical applications are still in the early stages due to the difficulties in achieving high performance nanowire emitters and integrating nanowire emitters with photonic platforms. In this dissertation, we demonstrate III V nanowire based lasers monolithically integrated on silicon on insulator (SOI) platforms, which can be potentially employed for chip scale optical communications and photonic integrated circuits. For this, selective area epitaxy of InGaAs nanowires on 3D structured SOI platforms is developed by catalyst free metal organic chemical vapor deposition. Nanowires are precisely positioned on 3D structures, including waveguides and gratings, with nearly 100 nanowire growth yield and wide bandgap tuning ranges. Next, nanowire array based bottom up photonic crystal cavities are demonstrated on SOI substrates. InGaAs/InGaP core/shell nanowire arrays form 1D and 2D photonic crystal cavities on SOI layers, and single mode room temperature lasing from these bottom up cavities is achieved by optically pumping the nanowire arrays. We also show that the nanowire array lasers are effectively coupled with SOI waveguides, which is achieved by integrating bottom up nanowires on pre patterned SOI platforms. The lasing wavelengths of nanowire array lasers are in the ranges of 1,100 1,440 nm, which covers telecommunication wavelengths, all operating at room temperature. It is also shown that arrays of proposed lasers with individually tunable wavelengths can be integrated on a single chip by lithographically tuning the cavity geometries. In summary, the III V nanowire lasers on silicon demonstrated in this dissertation represent a new platform for ultracompact and energy efficient light sources for silicon photonics and unambiguously point the way toward practical and functional nanowire lasers.
author_names: Hyunseok Kim
title: III V semiconductor nanowire lasers on silicon
year: 2018

abstract: The miniaturization of optoelectronic devices is essential for the continued success of photonic technologies. Nanowires have been identified as potential building blocks that mimic conventional photonic components such as interconnects, waveguides, and optical cavities at the nanoscale. Semiconductor nanowires with high optical gain offer promising solutions for lasers with small footprints and low power consumption. Although much effort has been directed toward controlling their size, shape, and composition, most nanowire lasers currently suffer from emitting at multiple frequencies simultaneously, arising from the longitudinal modes native to simple Fabry Perot cavities. Cleaved coupled cavities, two Fabry Perot cavities that are axially coupled through an air gap, are a promising architecture to produce single frequency emission. The miniaturization of this concept, however, imposes a restriction on the dimensions of the intercavity gaps because severe optical losses are incurred when the cross sectional dimensions of cavities become comparable to the lasing wavelength. Here we theoretically investigate and experimentally demonstrate spectral manipulation of lasing modes by creating cleaved coupled cavities in gallium nitride (GaN) nanowires. Lasing operation at a single UV wavelength at room temperature was achieved using nanoscale gaps to create the smallest cleaved coupled cavities to date. Besides the reduced number of lasing modes, the cleaved coupled nanowires also operate with a lower threshold gain than that of the individual component nanowires. Good agreement was found between the measured lasing spectra and the predicted spectral modes obtained by simulating optical coupling properties. This agreement between theory and experiment presents design principles to rationally control the lasing modes in cleaved coupled nanowire lasers.
author_names: Hanwei Gao

Anthony Fu

Sean C Andrews

Peidong Yang
title: Cleaved coupled nanowire lasers
venue: Proceedings of the National Academy of Sciences
year: 2013

abstract: Semiconductor nanowires (or other wire like nanostructures, including nanoribbons and nanobelts) synthesized by bottom up chemical growth show single crystalline structures, excellent geometric uniformities, subwavelength transverse dimensions, and relatively high refractive indices, making these one dimensional structures ideal optical nanowaveguides with tight optical confinement and low scattering loss. When properly pumped by optical or electrical means, lasing oscillation can be readily established inside these high gain active nanowires with feedback from endface reflection or near field coupling effects, making it possible to realize nanowire lasers with miniature sizes and high flexibilities. Also, the wide range material availability bestows the semiconductor nanowire with lasing wavelength selectable within a wide spectral range from ultraviolet (UV) to near infrared (IR) As nanoscale coherent light sources, in recent years, nanowire lasers have been attracting intensive attention for both fundamental research and technological applications ranging from optical sensing, signal processing, and on chip communications to quantum optics. Here, we present a review of the status and perspectives of semiconductor nanowire lasers, with a particular emphasis on their optical characteristics categorized in two groups: (1) waveguiding related properties in Section 3, which includes waveguide modes, near field coupling, endface reflection, substrate induced effects, and nanowire microcavities, and (2) optically pumped semiconductor nanowire lasers in Section 4, starting from principles and basic types of UV, visible, and near IR nanowire lasers relying on Fabry Perot cavities, to advanced configurations including wavelength tunable, single mode operated, fiber coupled, and metal incorporated nanowire lasing structures for more possibilities. In addition, the material aspects of semiconductor nanowires, including nanowire synthesis and electrically driven nanowire lasers, are briefly reviewed in Sections 2 and 5, respectively. Finally, in Section 6 we present a brief summary of semiconductor nanowire lasers regarding their current challenges and future opportunities.
author_names: Yaoguang Ma

Xin Guo

Xiaoqin Wu

Lun Dai

Limin Tong
title: Semiconductor nanowire lasers
year: 2013

abstract: We present a model to describe the spatiotemporal evolution of guided modes in semiconductor nanowires based on a coupled mode formalism. Light matter interaction is modelled based on semiconductor Bloch equations, including many particle effects in the screened Hartree Fock approximation. Appropriate boundary conditions are used to incorporate reflections at waveguide endfacets, thus allowing for the simulation of nanowire lasing. We compute the emission characteristics and temporal dynamics of CdS and ZnO nanowire lasers and compare our results both to Finite Difference Time Domain simulations and to experimental data. Finally, we explore the dependence of the lasing emission on the nanowire cavity and on the materials relaxation time.
author_names: Robert Buschlinger

M Lorke

Ulf Peschel
title: Coupled Mode Theory for Semiconductor Nanowires
year: 2016

abstract: Chip scale integrated light sources are a crucial component in a broad range of photonics applications. III V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice mismatched silicon substrates. Although there have been remarkable advances in nanowire based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits. Here, we demonstrate for the first time optically pumped III V nanowire array lasers monolithically integrated on silicon on insulator (SOI) platform. Selective area growth of InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a prepatterned SOI platform. These results represent a new platform for ultracompact and energy efficient optical links and unambiguously point the way toward practical and functional nanowire lasers.
author_names: Hyunseok Kim

Wook-Jae Lee

Alan C Farrell

Juan S D Morales

Pradeep Senanayake

Sergey V Prikhodko

Tomasz J Ochalski

Diana L Huffaker
title: Monolithic InGaAs Nanowire Array Lasers on Silicon on Insulator Operating at Room Temperature.
venue: Nano letters
year: 2017

abstract: Semiconductor nanowires (NWs) are promising for realizing various on chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light matter interaction. However, high intensity pulsed pump lasers are typically needed to exploit their optical nonlinearity because light couples poorly with nanometric size wires. Here, we demonstrate microwatts continuous wave light pumped second harmonic generation (SHG) in AlGaAs NWs by integrating them with silicon planar photonic crystal cavities. Light NW coupling is enhanced effectively by the extremely localized cavity mode at the subwavelength scale. Strong SHG is obtained even with a continuous wave laser excitation with a pump power down to ~3 uW, and the cavity enhancement factor is estimated around 150. Additionally, in the integrated device, the NW's SHG is more than two order of magnitude stronger than third harmonic generations in the silicon slab, though the NW only couple s with less than 1% of the cavity mode. This significantly reduced power requirement of NW's nonlinear frequency conversion would promote NW based building blocks for nonlinear optics, specially in chip integrated coherent light sources, entangled photon pairs and signal processing devices.
author_names: Qingchen Yuan

Liang Fang

He Yang

Xuetao Gan

Vladislav Khayrudinov

Harri Lipsanen

Zhipei Sun

Jianlin Zhao
title: Low Power Continuous Wave Second Harmonic Generation in Semiconductor Nanowires
year: 2018

abstract: Mid infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self catalyst vapor liquid solid method and transferred to gold deposited SiO2/Si substrates. Low temperature micro photoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 um (3850 cm 1 in frequency) which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.
author_names: Hisashi Sumikura

Guoqiang Zhang

Masato Takiguchi

Naotomo Takemura

Akihiko Shinya

Hideki Gotoh

Masaya Notomi
title: Mid Infrared Lasing of Single Wurtzite InAs Nanowire.
venue: Nano letters
year: 2019

abstract: High quality factor and small mode volume in nanocavities enable the demonstration of efficient nanophotonic devices with low power consumption, strong nonlinearity, and high modulation speed, due to the strong light matter interaction. In this review, we focus on recent state of the art nanocavities and their applications. We introduce single nanocavities including semiconductor nanowires, plasmonic cavities, and nanostructures based on quasi bound states in the continuum (quasi BIC) for laser, photovoltaic, and nonlinear applications. In addition, nanocavity arrays with unique feedback mechanisms, including BIC cavities, parity time symmetry coupled cavities, and photonic topological cavities, are introduced for laser applications. These various cavity designs and underlying physics in single and array nanocavities are useful for the practical implementation of promising nanophotonic devices.
author_names: Min-Soo Hwang

Kwang-yong Jeong

Kyoung-Ho Kim

Ha-Reem Kim

Jae-Pil So

Hoo-Cheol Lee

Jungki Kim

Soon-Hong Kwon

Hong-Gyu Park
title: Recent advances in nanocavities and their applications.
venue: Chemical communications
year: 2021

abstract: 2018 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved. Self assembled semiconductor quantum dots (QDs) are potentially scalable candidates for solid state single photon emitters which deterministically generate one single photon per excitation. Such on demand single photon sources serve as one of the key elements in modern photonic quantum technologies [1] Until very recently, near optimal QD single photon sources with simultaneous high degree of brightness, single photon purity and indistinguishability [2] have been achieved in QD micropillar systes, showing superior performance in photonic quantum computation/simulation, e.g. Boson sampling [3] thanks to the large Purcell effect and the resonant excitation scheme. In particular, advances in resonant excitation have shown that the excitonic states in single QDs can be coherently driven and manipulated, so as to minimize the undesirable dephasing processes via the reduction in fluctuations of the electrostatic environments and elimination of incoherent phonon assisted carrier relaxation [4,5] However, direct implementations of resonant excitation on QDs in other nanostructures for efficient single photon generation [6] such as nanowire [7] micro lens [8] circular Bragg grating [9,10] and photonic crystal nanocavity [11] etc. is still a challenge because it is technically nontrivial to differentiate the fluorescence from the same frequency laser scattered by the photonic nanostructures. Up converted (UC) photoluminescence (PL) in semiconductors, describing emissions at energies higher than that of the excitation energy, has attracted growing interest in the last few years, e.g. UC excitation can be used to excite the QDs via the two photon absorption (TPA) [12] or Auger processes [13] A common drawback is that the UC process, especially a direct TPA process, is always associated with a significantly lower efficiency as compared to its down converted counterpart. A typical QD TPA Elsevier B.V. and Science China Pr u) liujin23@mail.sysu.edu.cn experiment requires an ensemble of QDs as well as pulsed laser to provide enough excitation power [14] In this short communication, we present the first realization of UC excitation, to the best of our knowledge, on single QDs for efficient single photon generations. The experimental setup and micropillar cavity modes are shown in Supplementary data (Note 1 and 2 online) We investigate a QD that was deterministically embedded in a micropillar via the fluorescence imaging technique [15,16] The energy levels of the QD system are schematically shown in Fig. 1a, describing the aboveband (blue line) and UC (red line) excitation processes. In the aboveband excitation, the carriers are directly generated in the valence band and conduction band by using a laser with the energy higher than the bandgap of GaAs material. The generated carriers then relax to the wetting layer and further down to the first excited state of QD via a phonon mediated process before the radiative singlephoton emission. On the other hand, the carriers are directly generated in the QD excited states in the UC excitation scenario that we will explain in details. Fig. 1b and c show the PL spectra of the QD continuously excited via aboveband (780 nm) and UC (940 nm) excitations at the saturation power, respectively. Spectral resonance between fundamental mode (FM) and the QD is introduced at the measurement temperature of 53 K. The detected fluorescent intensity in silicon charged couple device (CCD) from the QD via the UC excitation scheme is 22.8 counts/s which is very close to the number (24.6 counts/s) achieved in the aboveband excitation. Furthermore, the wetting layer (WL) emission at 865 nm shown in the aboveband excitation is strongly suppressed in the UC excitation scheme, indicating the reduction of carrier re capture process that we shall present in the photon correlation measurements. Fig. 1d demonstrates the signal intensities as a function of the excitation power for both aboveband excitation and UC excitation in the logarithm scale. The quadratic dependency (Px 1.73 0.11) in UC excitation indicates that the ess. All rights reserved. Fig. 1. Sketch of the excitation mechanism, PL spectra and PLE measurements. (a) Schematic energy level diagram illustrating aboveband and UC excitation schemes. The blue line connecting the lowest quantum dot states indicates spontaneous emission under the aboveband excitation, while the red line indicates spontaneous emission under the UC excitation. (b) (c) PL spectra of a single QD in a micropillar under 780 and 940 nm CW excitation at saturated power. (d) Excitation power dependence of the fluorescence intensity under aboveband (blue squares) and UC (red circles) excitations. The slope of each power density dependence is indicated. (e) A typical PL from QD inmicropillar excited under 780 nm CW excitation at very high excitation power. (f) (g) The integrated intensity of the emission with varied CW excitation wavelength with half saturated excitation power at 53 and 10 K, respectively.
author_names: Rongling Su

Shunfa Liu

Yuming Wei

Ying Yu

Jin Liu

Siyuan Yu

Xuehua Wang
title: Bright and pure single photons from quantum dots in micropillar cavities under up converted excitation
year: 2018