Search query: GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

Related papers:

abstract: Enhancement mode metal oxide semiconductor field effect transistors (MOSFETs) with trench gate structures have been developed. These MOSFETs show excellent DC characteristics with on voltage of 5.1 V, i.e. enhancement mode operation and extremely high channel mobilities of 133 cm2/(V s) This structure enables us to realize vertical switching devices with high breakdown voltage and highly integrated low on resistance with the usage of excellent physical parameters of GaN. This excellent performance of these devices breaks though the realization of GaN based power switching transistors.
author_names: Hirotaka Otake

Shin Egami

Hiroaki Ohta

Yasushi Nanishi

Hidemi Takasu
title: GaN Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
year: 2007

abstract: Completely vertical trench gate metal oxide semiconductor field effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time. These MOSFETs exhibited enhancement mode operation with a threshold voltage of 3.7 V and an on resistance of 9.3 mOcm2. The channel mobility was estimated to be 131 cm2/(Vs) when all the resistances except for that of the channel are considered. Such structures, which satisfy the key words "vertical" "trench gate" and "MOSFET" will enable us to fabricate practical GaN based power switching devices.
author_names: Hirotaka Otake

Kentaro Chikamatsu

Atsushi Yamaguchi

Tatsuya Fujishima

Hiroaki Ohta
title: Vertical GaN Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors on GaN Bulk Substrates
year: 2008

abstract: We have demonstrated the enhancement mode n channel gallium nitride (GaN) metal oxide field effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique. The electron mobility of 100 cm2/V*s, subthreshold of 500 mV/dec, and transconductance of 14 ms/mm are measured in GaN MOSFETs based on the implantation technique. Meanwhile, the GaN MOSFETs fabricated using the regrowth method perform the electron mobility, transconductance, and subthreshold of 120 cm2/V s, 18 ms/mm, and 300 mV/dec, respectively. Additionally, the MOSFETs with the regrown p GaN gate body show the Ion/Ioff ratio of approximately 4 x 107, which is, to our knowledge, among the best results of GaN MOSFETs to date. This research contributes a valuable information for the design and fabrication of power switching devices based on GaN.
author_names: Huu Trung Nguyen

Hisashi Yamada

Toshikazu Yamada

Tokio Takahashi

Mitsuaki Shimizu
title: Fabrication and Evaluation of N Channel GaN Metal Oxide Semiconductor Field Effect Transistors Based on Regrown and Implantation Methods
venue: Materials
year: 2020

abstract: InGaSb on insulator (InGaSb OI) and InAs/InGaAs/InAs on insulator (InAs/InGaAs OI) structures have been realized on Si by a direct wafer bonding (DWB) technology using atomic layer deposition Al2O3. While strain introduced in InGaSb channel layers grown on InAs can enhance the hole mobility of the Sb based channel layers, a difficult issue of fabricating InGaSb OI wafers is to obtain a smooth InGaSb surface, which is mandatory for wafer bonding. In this study, the surface of a 20 nm thick In0.185Ga0.815Sb channel grown on an InAs (100) substrate and an InAs (2.5 nm)/In0.185Ga0.815Sb (20 nm)/InAs (2.5 nm) channel with a 20 nm thick GaSb buffer layer grown on an InAs (100) substrate by metal organic chemical vapor deposition have a root mean square of the surface roughness as low as 0.16 and 0.22 nm, respectively, over a scan area of 10 x 10 mm2, which are smooth enough to employ the wafer bonding. As a result, the fabrication of the InGaSb OI wafers by the DWB and the operation of InGaSb OI p channel metal oxide semiconductor field effect transistors (p MOSFETs) by using the DWB wafers are demonstrated. Also, the performance of InGaSb OI p MOSFETs is found to be improved by inserting ultrathin InAs layers between InGaSb and insulating buried oxide layers. An InGaSb OI and an InAs/InGaAs OI p MOSFET under the accumulation mode operation exhibit a peak mobility of ~161 and ~273 cm2/V s, respectively. The channel hole mobility of the InGaSb OI p MOSFET is higher than that of the GaSb on insulator (GaSb OI) p MOSFET and can exceed that of Si p MOSFETs.InGaSb on insulator (InGaSb OI) and InAs/InGaAs/InAs on insulator (InAs/InGaAs OI) structures have been realized on Si by a direct wafer bonding (DWB) technology using atomic layer deposition Al2O3. While strain introduced in InGaSb channel layers grown on InAs can enhance the hole mobility of the Sb based channel layers, a difficult issue of fabricating InGaSb OI wafers is to obtain a smooth InGaSb surface, which is mandatory for wafer bonding. In this study, the surface of a 20 nm thick In0.185Ga0.815Sb channel grown on an InAs (100) substrate and an InAs (2.5 nm)/In0.185Ga0.815Sb (20 nm)/InAs (2.5 nm) channel with a 20 nm thick GaSb buffer layer grown on an InAs (100) substrate by metal organic chemical vapor deposition have a root mean square of the surface roughness as low as 0.16 and 0.22 nm, respectively, over a scan area of 10 x 10 mm2, which are smooth enough to employ the wafer bonding. As a result, the fabrication of the InGaSb OI wafers by the DWB and the operation of InGaSb OI p channel metal.
author_names: Masafumi Yokoyama

Haruki Yokoyama

Mitsuru Takenaka

Shinichi Takagi
title: InGaSb on insulator p channel metal oxide semiconductor field effect transistors on Si fabricated by direct wafer bonding
venue: Journal of Applied Physics
year: 2019

abstract: GaN metal oxide semiconductor field effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch off characteristics and a maximum field effect mobility of 145.2 cm2*V 1*s 1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4 etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2 masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.
author_names: Qingpeng Wang

Jin-Ping Ao

Pangpang Wang

Ying Jiang

Liuan Li

Kazuya Kawaharada

Yang Liu
title: GaN metal oxide semiconductor field effect transistors on AlGaN/GaN heterostructure with recessed gate
venue: Frontiers of Materials Science
year: 2015

abstract: We have evaluated specific on state resistance (R on,sp) and switching performance of various GaN power field effect transistors (FETs) with 600 and 1200 V ratings using analytical calculation and numerical simulation. The normally off GaN power FET family includes lateral p GaN gate high electron mobility transistors (HEMTs) lateral metal oxide semiconductor (MOS) channel HEMTs, current aperture vertical electron transistors (CAVETs) and vertical U shaped trench gate MOS field effect transistors (UMOSFETs) This study shows the advantages of vertical GaN power FETs over lateral GaN power HEMTs. These advantages include lower R on,sp and smaller switching energy loss, especially at higher blocking voltages (1200 V) At 600 V, lateral P GaN gate HEMTs are competitive with vertical power FETs. Vertical GaN CAVETs perform better than both lateral HEMTs and vertical UMOSFETs at both voltage ratings, benefiting from its lowest R on*Q G figure of merit.
author_names: Zhibo Guo

Collin W Hitchcock

T Paul Chow
title: Comparative performance evaluation of lateral and vertical GaN high voltage power field effect transistors
venue: Japanese Journal of Applied Physics
year: 2019

abstract: In this paper, the normally off N channel lateral 4H Si C metal oxide semiconductor field effect transistors(MOSFFETs) have been fabricated and characterized. A sandwich (nitridation oxidation nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H Si C/SiO2 were examined by the measurement of HF I V, G V, and C V over a range of frequencies. The ideal C V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H Si C was reduced to 2 x 1011 e V 1*cm 2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm2*V 1*s 1, and the maximum peak field effect mobility of 38 cm2*V 1*s 1 was achieved in fabricated lateral 4H Si C MOSFFETs.
title: Fabrication and characterization of the normally,off N channel lateral 4H SiC metal oxide semiconductor field effect transistors
year: 2016

abstract: We report room temperature to 200 degC operation of n Al0.65Ga0.35N channel metal semiconductor field effect transistors (MESFET) grown over high quality AlN/sapphire templates. For this temperature range, the source drain currents, threshold voltages, and dc transconductance values remain nearly unchanged with an estimated field effect mobility of ~90 cm2/V s at 200 degC and currents of >100 mA/mm. The analysis of the temperature dependent current voltage characteristics of the gate source Schottky barrier diode reveals that the leakage currents arise from Frenkel Poole emission. The capacitance voltage data show no hysteresis, indicating a high quality Schottky barrier interface. These MESFET's have excellent potential for use as a high temperature power electronic or a solar blind ultraviolet sensing device.
author_names: Sakib Muhtadi

Seongmo Hwang

Antwon Coleman

Fatima Asif

Alexander V Lunev

Mvs Chandrashekhar

Asif Khan
title: High temperature operation of n AlGaN channel metal semiconductor field effect transistors on low defect AlN templates
year: 2017

abstract: Performance improvement of InGaAs buried channel metal oxide semiconductor field effect transistors (MOSFETs) has been achieved by inserting InAs layer and properly designing the inserted layer position. In0.7Ga0.3As and InAs channel buried channel MOSFETs were fabricated and analyzed including drive current, transconductance, effective mobility, and subthreshold swing. All InAs buried channel devices show good off state and saturation property. By inserting InAs in the middle of InGaAs channel (InGaAs/InAs/InGaAs channel) 37% enhancement of high field effective channel mobility was achieved over devices with pure InGaAs channel. Devices with InAs inserted in the middle exhibits peak effective channel mobility around 6140 cm2/V s and subthreshold swing of 107 mV/dec.
author_names: Fei Xue

Han Zhao

Yen-Ting Chen

Yanzhen Wang

Fei Zhou

Jack C Lee
title: InAs inserted InGaAs buried channel metal oxide semiconductor field effect transistors with atomic layer deposited gate dielectric
year: 2011

abstract: We demonstrated the advantage of aluminum oxynitride (AlON) gate insulator in enhancing the performance of recessed gate AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors (MOS HFETs) fabricated with reactive ion etching. The AlON deposition on the recessed gate structures was found to mitigate the damage of recess etching on the GaN and AlGaN surfaces, enabling a simple gate recess process in the device fabrication. Consequently, a high field effect mobility of 259 cm2 V 1 s 1, together with normally off operation, was achieved for the recessed gate AlGaN/GaN MOS HFETs with the AlON gate insulator. Temperature dependence of the transconductance of the fabricated devices revealed that carrier transport in the channel was mostly dominated by phonon scattering, indicating excellent interface quality between the AlON insulator and the recess etched AlGaN surfaces.
author_names: Takuji Hosoi

Kenta Watanabe

Mikito Nozaki

Takahiro Yamada

Takayoshi Shimura

Heiji Watanabe
title: Mobility enhancement in recessed gate AlGaN/GaN MOS HFETs using an AlON gate insulator
venue: Japanese Journal of Applied Physics
year: 2019