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abstract: Graphene is considered as one of the most promising materials for post silicon electronics, as it combines high electron mobility with atomic thickness [Novoselov et al. Science 2004, 306, 666 669. Novoselov et al. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451 10453] The possibility of chemical doping and related excellent chemical sensor properties of graphene have been demonstrated experimentally [Schedin et al. Nat. Mater. 2007, 6, 652 655] but a microscopic understanding of these effects has been lacking, so far. In this letter, we present the first joint experimental and theoretical investigation of adsorbate induced doping of graphene. A general relation between the doping strength and whether adsorbates are open or closed shell systems is demonstrated with the NO2 system: The single, open shell NO2 molecule is found to be a strong acceptor, whereas its closed shell dimer N2O4 causes only weak doping. This effect is pronounced by graphene's peculiar density of states (DOS) which provides an ideal situation for model studies of doping effects in semiconductors. We show that this DOS is ideal for "chemical sensor" applications and explain the recently observed [Schedin et al. Nat. Mater. 2007, 6, 652 655] NO2 single molecule detection.
author_names: Tim Oliver Wehling

Kostya S Novoselov

S V Morozov

Evgenii E Vdovin

Mikhail I Katsnelson

Andre K Geim

Alexander I Lichtenstein
title: Molecular doping of graphene.
venue: Nano letters
year: 2008

abstract: One of the most exciting recent developments in nanoscience was the discovery of graphene (single sheets of carbon atoms, a two dimensional "(2D) crystal" and the subsequent discovery of the fascinating properties of this new material, e.g. electrons behaving as massless relativistic particles and an anomalous quantum Hall effect [A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007) It is also surprising that large sheets of graphene exist as it was widely believed that 2D crystals are unstable. Furthermore, because of the stability of folded graphene sheets, i.e. carbon nanotubes (CNTs) a fascinating question is why does not graphene spontaneously transform into CNTs? In this paper, we explore the thermal stability of small pieces of graphene, i.e. graphene nanoflakes by ab initio quantum mechanical techniques. We find that indeed nanoflakes are stable to being heated and do not under any conditions used here transform to CNTs. They do not, however, remain strictly 2D as at finite temperatures, they undergo extensive vibrational motion and remain buckled if annealed and then quenched to room temperature.
author_names: Amanda S Barnard

I K Snook
title: Thermal stability of graphene edge structure and graphene nanoflakes.
venue: The Journal of chemical physics
year: 2008

abstract: Graphene is a single layer of carbon atoms that offer a unique set of advantages as a chemical sensor due to a number of its inherent properties. Graphene has been explored as a gas sensor for a variety of gases, and molecular sensitivity has been demonstrated by measuring the change in electrical properties due to the adsorption of target species (Schedin, F. Geim, A.K. Morozov, S.V. Hill, E.W. Blake, P. Katsnelson, M.I. Novoselov, K.S. Nat. Mater 2007, 6, 652 655. doi:10.1038/nmat1967) In this paper, we discuss the development of an array of chemical sensors based on graphene and its relevance to plasma physics due to its sensitivity to radical species such as O+ H+ and the corresponding neutrals. We briefly discuss the great impact such sensors will have on a number of heliophysics applications such as ground based manifestations of space weather.
author_names: Mahmooda Sultana

Fred A Herrero

George V Khazanov
title: Graphene chemical sensors for heliophysics applications
year: 2013

abstract: Lately, the integration of two dimensional materials into semiconductor devices has allowed the modification of their effective index by simply applying a modest voltage (between 0 and 3 volts) In this work, we present a device composed of two evanescently coupled silicon microring resonators where both rings have a graphene layer on top. This design is aimed to produce frequency combs with transmission characteristics controlled upon voltage application to the graphene layer. We numerically analyze the device response as a function of the incident wavelength and applied voltage. The results showed a low input intensity (0.6 GW/cm2) needed and a rapid response time (0.1 ms) in comparison to devices controlled by heat injection. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement OCIS codes: (130.0130) Integrated optics; (230.0230) Optical devices. (190.0190) Nonlinear optics. References and links 1. Z. Sun, A. Martinez, and F. Wang, "Optical modulators with 2D layered materials," Nat. Photonics 10, 227 238 (2016) 2. T. Low, A. Chaves, J. D. Caldwell, A. Kumar, N. X. Fang, P. Avouris, T. F. Heinz, F. Guinea, L. Martin Moreno, and F. Koppens, "Polaritons in layered two dimensional materials," Nat. Mater. 16, 182 (2017) 3. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science 306, 666 669 (2004) 4. A. K. Geim and K. S. Novoselov, "The rise of graphene," Nat Mater 6, 183 (2007) 5. F. Schwierz, "Graphene transistors," Nat. Nanotechnol. 5, 487 496 (2010) 6. F. Bonaccorso, Z. Sun, T. Hasan, and A. Ferrari, "Graphene photonics and optoelectronics," Nat. Photonics 4, 611 622 (2010) 7. L. Liao, Y. C. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, Y. Qu, K. L. Wang, Y. Huang, and X. Duan, "High speed graphene transistors with a self aligned nanowire gate," Nature 467, 305 308 (2010) 8. P. Avouris, Z. 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Wineland, "An optical clock based on a single trapped 199hg+ ion," Science 293, 825 828 (2001) 19. M. Murphy, T. Udem, R. Holzwarth, A. Sizmann, L. Pasquini, C. Araujo Hauck, H. Dekker, S. D'Odorico, M. Fischer, T. Hansch, and A. Manescau, "High precision wavelength calibration of astronomical spectrographs with laser frequency combs," Mon. Not. R. Astron. Soc. 380, 839 847 (2007) 20. T. Steinmetz, T. Wilken, C. Araujo Hauck, R. Holzwarth, T. W. Hansch, L. Pasquini, A. Manescau, S. D'Odorico, M. T. Murphy, T. Kentischer, W. Schmidt, and T. Udem, "Laser frequency combs for astronomical observations," Science 321, 1335 1337 (2008) 21. C. H. Li, A. J. Benedick, P. Fendel, A. G. Glenday, F. X. Kartner, D. F. Phillips, D. Sasselov, A. Szentgyorgyi, and R. L. Walsworth, "A laser frequency comb that enables radial velocity measurements with a precision of 1 cm s 1," Nature 452, 610 612 (2008) 22. S. A. Diddams, L. Hollberg, and V. Mbele, "Molecular fingerprinting with the resolved modes of a femtosecond laser frequency comb," Nature 445, 627 630 (2007) 23. C. Gohle, T. Udem, M. Herrmann, J. Rauschenberger, R. Holzwarth, H. A. Schuessler, F. Krausz, and T. W. Hansch, "A frequency comb in the extreme ultraviolet," Nature 436, 234 237 (2005) 24. R. J. Jones, K. D. Moll, M. J. Thorpe, and J. Ye, "Phase coherent frequency combs in the vacuum ultraviolet via high harmonic generation inside a femtosecond enhancement cavity," Phys. Rev. Lett. 94, 193201 (2005) 25. F. Keilmann, C. Gohle, and R. Holzwarth, "Time domain mid infrared frequency comb spectrometer," Opt. Lett. 29, 1542 1544 (2004) 26. I. Coddington, W. C. Swann, L. Nenadovic, and N. R. Newbury, "Rapid and precise absolute distance measurements at long range," Nat. Photonics 3, 351 356 (2009) 27. R. W. Boyd, Nonlinear optics (Academic Press, 2003) 28. G. P. Agrawal, Nonlinear fiber optics (Academic Press, 2007) 29. T. J. Kippenberg, R. Holzwarth, and S. Diddams, "Microresonator based optical frequency combs," Science 332, 555 559 (2011) 30. T. Herr, K. Hartinger, J. Riemensberger, C. Wang, E. Gavartin, R. Holzwarth, M. Gorodetsky, and T. Kippenberg, "Universal formation dynamics and noise of kerr frequency combs in microresonators," Nat. Photonics 6, 480 487 (2012) 31. A. A. Savchenkov, A. B. Matsko, V. S. Ilchenko, I. Solomatine, D. Seidel, and L. Maleki, "Tunable optical frequency comb with a crystalline whispering gallery mode resonator," Phys. Rev. Lett. 101, 093902 (2008) 32. I. S. Grudinin, N. Yu, and L. Maleki, "Generation of optical frequency combs with a caf 2 resonator," Opt. Lett. 34, 878 880 (2009) 33. W. Liang, A. Savchenkov, A. Matsko, V. Ilchenko, D. Seidel, and L. Maleki, "Generation of near infrared frequency combs from a MgF2 whispering gallery mode resonator," Opt. Lett. 36, 2290 2292 (2011) 34. C. Wang, T. Herr, P. Del'Haye, A. Schliesser, R. Holzwarth, T. W. Haensch, N. Picque, and T. Kippenberg, "Midinfrared frequency combs based on microresonators," in Proceedings of Optical Society of America Conference CLEO: Science and Innovations (Optical Society of America, 2011) p. PDPA4. 35. I. H. Agha, Y. Okawachi, M. A. Foster, J. E. Sharping, and A. L. Gaeta, "Four wave mixing parametric oscillations in dispersion compensated high q silica microspheres," Phys. Rev. A 76, 043837 (2007) 36. L. Razzari, D. Duchesne, M. Ferrera, R. Morandotti, S. Chu, B. Little, and D. Moss, "Cmos compatible integrated optical hyper parametric oscillator," Nat. Photonics 4, 41 45 (2010) 37. J. S. Levy, A. Gondarenko, M. A. Foster, A. C. Turner Foster, A. L. Gaeta, and M. Lipson, "Cmos compatible multiple wavelength oscillator for on chip optical interconnects," Nat. Photonics 4, 37 40 (2010) 38. M. A. Foster, J. S. Levy, O. Kuzucu, K. Saha, M. Lipson, and A. L. Gaeta, "Silicon based monolithic optical frequency comb source," Opt. Express 19, 14233 14239 (2011) 39. D. Braje, L. 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Tang, "Optical frequency comb generation from aluminum nitride microring resonator," Opt. Lett. 38, 2810 2813 (2013) 45. X. Xue, Y. Xuan, P. H. Wang, J. Wang, D. E. Leaird, M. Qi, and A. M. Weiner, "Tunable frequency comb generation from a microring with a thermal heater," in Proceedings of Optical Society of America Conference CLEO: Science Vol. 26, No. 12 11 Jun 2018 OPTICS EXPRESS 15491
author_names: Chadli A

P V
title: Manipulation of extinction features in frequency combs through the usage of graphene
year: 2018

abstract: A decade after the discovery of grapheme by A.K. Geim and K.S. Novoselov manyof its fundamental properties have been intensely studied. Indeed, the early promise ofgrapheme has been kept, leading to a fruitful research in many felds as diverse as optics,mechanics, chemistry or electronics, and grapheme still deserves the name of wondermaterial as among its attributes there is an exceptionally good conduction of heat andelectricity, it is one of the strongest known material while being light and opticallytransparent. Its success was partly due to the easy micromechanical cleavage or scotchtape exfoliation technique accessible to any laboratory without heavy equipment, thatallowed to study the properties of grapheme with a wide range of experimental techniques.Following the success of grapheme, other two dimensional (2D) materials were obtainedwith the same technique, leading to a particularly rich physics.
author_names: Quentin Wilmart
title: Engineering doping profils in graphene from Dirac fermion oprtics to high frequency electronics
year: 2015

abstract: En 2004, un nouveau materiau, le graphene, a ete isole pour la premiere fois sur un substrat de SiO2, en utilisant une technique d'exfoliation mecanique par K.S. Novoselov et A.K. Geim Prix Nobels de Physique 2010. Ce materiau, qui presente des proprietes electriques et mecaniques extraordinaires, a suscite d'importants travaux de recherche. Des lors, differentes methodes de synthese du graphene sur des substrats de plus en plus grands sont developpees. C'est dans ce cadre que j'ai commence mes travaux de recherche en 2007, avec pour objectif de demontrer les potentialites des transistors a base de graphene, pour des applications hyperfrequences. Notre choix s'est oriente sur la synthese du graphene par graphitisation du SiC. Ces travaux se sont deroules en etroite collaboration avec le groupe EPIPHY en charge de la synthese du materiau, dans le cadre du projet ANR XP Graphene labellise en 2007, avec le soutien de ST Microeletronics. Apres avoir mis en evidence les proprietes du materiau ayant un impact sur les caracteristiques des transistors a effet de champ sur ce materiau, j'ai developpe au cours de ma these des procedes technologiques permettant de fabriquer des transistors sur ce type de materiau, ainsi qu'une procedure de caracterisation des differentes etapes technologiques. A titre d'exemple, un travail important a ete mene sur les aspects de la nanolithographie, de maniere a realiser de maniere courante des reseaux de nano rubans de largeur 20 nm, de longueur 1 um, et espaces de 40 nm. A l'issue de ma these, j'ai reussi a fabriquer et a caracteriser des transistors presentant des performances hyperfrefrences globales au meilleur niveau international.
author_names: Nan Meng
title: Fabrication et caracterisation de transistors a base de Graphene Nano Ruban en vue d'application haute frequence
year: 2011

abstract: Following the recents works of K.S. Novoselov and A.K. Geim [1] in 2004, the semiconductor industry has been attracted to carbon based technologies in order to maintain the trend on low cost and still reducible transistor structures. From circuit point of view, monolayer and bilayer Graphene FETs (GFETs) are being studied for high performance applications. Although monolayer graphene presents an energy band structure where there is no bandgap, its high thermal and electrical conductivity makes it suitable for high frequency applications. On the other hand, bilayer graphene presents a tunable bandgap by the application of an electric field perpendicular to the layer which allows the design of more flexible GFET structures. In this paper, we report the evidence of a tunable bandgap on bilayer graphene based on physical equations and the expected performances of these devices are compared with monolayer graphene FETs. The presented results are based on GFET structures with an HfO2 top gate dielectric (er 16) and a SiO2 back gate dielectric (er 3.9) as in [4] The gate length is fixed to 1 mm and the width to 2.1 mm. Residual carrier density npuddle is considered to be 1.5e12 cm 2 and the net doping concentration to 5e12 cm 2 Access resistances RS and RD are set to be equal to 100 O. Electron and hole mobilities are set to 1500 cm 2 /V s. For the simulations shown below, the effect of a tunable bandgap on a AB stacking bilayer graphene (Figure 1) due to the applied electric field has been taken into account. Figure 2 shows the low energy bands for bilayer graphene for two different values of the applied potential energy. When the applied potential energy is zero (U 0 eV) there is no bandgap (Egap 0) on the other hand when the applied potential energy is non zero (i.e. U 1 eV) the presence of a non zero energy band gap can be observed. Figure 3 shows the Energy band gap Egap under the average electrical displacement field generated by the applied bias voltages [2] A variation on Egap within [0 to 250 meV] can be noted. For the purpose of a comparative study, the monolayer and bilayer GFETs are compared via numerical simulations. Based on [3] and [4] a model for monolayer GFET has been developed where access resistances, the effect of puddles on carrier density and doping concentration are taken into account. In the case of bilayer GFETs a model based on physical equations [5] has been developed. Figure 4 shows a comparison of the IDS VGS plot for bilayer and monolayer GFETs under the same bias conditions VDS 1.5, 1.0, 0.5] V and a back gate voltage VBG 40 V. Higher currents on bilayer GFETs can be observed from Figure 4 and a higher transconductance gm reflecting a better current modulation in the channel by the gate voltage. Figure 5 shows the typical ID VDS characteristic for both bilayer and monolayer GFETs under the same bias conditions Vgs [0 to 3.0] V and VBG 40 V. Higher currents and higher output conductance gds are observed in the case of bilayer GFETs. The effect of a backgate voltage VBG is shown in Figure 6 from which it can be observed that the current modulation stays constant for all VBG as the ambipolar point (VDirac) moves along de x axis. Extraction of small signal parameters from both the GFETs allows us to calculate the cut off frequency fT as a function of gate length (Figure 7) Higher cut off frequencies, fT, can be observed for bilayer graphene for all gate lengths. Scaling down gate lengths for both bilayer and monolayer GFETs show an increase in fT. Thus, from our study, we can infer some important conclusions about the possible future of GFETs as bilayer graphene offers higher cut off frequencies and a tunable band gap over monolayer devices. Even if voltage gain (AV gm/gds) is higher in bilayer graphene FETs, it is still to be improved for future high performance applications.
author_names: Chhandak Mukherjee

Sebastien Fregonese

Cristell Maneux

Thomas Zimmer
title: Analytical Study of Performances of Monolayer and Bilayer Graphene FETs Based on Physical Mechanisms
year: 2014

abstract: Since Iijima discovered carbon nanotubes in 1991, many studies on the polymer nanocomposites has been mushroomed at recent years. Carbon nanotube has improved the physical properties of polymers. The mechanical properties of nanocomposites such as the elastic modulus, E, and the hardness, H has had a significant improvement. Then, in 2004, A.K. Geim and K.S. Novoselov separated graphene from graphite by mechanical cleavage, the extraordinary physical properties and ability to be dispersed in various polymer matrices has created a new field of polymer nanocomposites, an extensive research in the field has been initiated. In this study we investigate the influence of nano carbon reinforcements on mechanical properties of carbon nanotube/epoxy and graphene nanoplatelets/epoxy composites. Carbon nanotube (CNT) and expanded graphene nanoplatelets (EGNP) were dispersed within epoxy resins using a high pressure processor and a three roll milling. Characteristics on EGNPs/epoxy was confirmed with micro Raman spectroscopy. Nano indentation test was performed on the nano composites. The interction of CNT and EGNP improved the modulus and hardness of the composite. However, a significant increase of mechanical properties was seen at the low nano carbon content, but it is more and more difficult to disperse homogeneously with higher concentrations. Also the viscoelastic behavior of graphene nanoplatelets/epoxy composites is examined by the nano indentations test
title: Nai Mi Tan Guan /Huan Yang Shu Zhi Yu Shi Mo Xi /Huan Yang Shu Zhi Fu He Cai Liao Zhi Nai Mi Ya Hen Shi Yan Yan Jiu
year: 2012

abstract: Graphene, an atomically thin carbon monolayer, is a unique condensed matter system which shows the features predicted by relativistic quantum mechanics [1] Apart from merging the two rather distant elds of physics together, the world of graphene is also considered as a promissing environment for solid state quantum computing. We review the existing theoretical proposals for physical realization of a qubit in graphene nanostructures [2,3,4] which were recently followed by a remarkable progress in nanoribbon fabrication [5] The role of spontaneous magnetic order predicted for zigzag edge ribbons [4] is stressed. Finally, we present the original proposal for building graphene quantum dots by trapping electrons with the help of sublattice mismatch. [1] A.K. Geim and K.S. Novoselov, Nature Materials 6, 183 (2007) [2] B. Trauzettel, D.V. Bulaev, D. Loss, and G. Burkard, Nature Physics 3, 192 (2007) [3] A. Rycerz, J. TworzydAlo, and C.W.J. Beenakker, Nature Physics 3, 172 (2007) [4] M.Wimmer et al. arxiv:0709.3244; S.Dutta et al. Phys. Rev. B 77, 073412 (2008) [5] X. Li et al. Science 319, 1229 (2008)
author_names: Adam Rycerz
title: 7 cm GRAPHENE NANORIBBONS A KEY INGREDIENT FOR SOLID STATE QUANTUM INFORMATION PROCESSING
year: 2008

abstract: Submitted for the MAR11 Meeting of The American Physical Society Giant Spin Hall Effect and Nonlocal Transport in Graphene DMITRY ABANIN, Princeton, K.S. NOVOSELOV, A.K. GEIM, Manchester, L.S. LEVITOV, MIT Graphene provides a unique opportunity to explore quantumrelativistic phenomena in a condensed matter laboratory. Interesting phenomena associated with the parity anomaly, including quantum Hall effect in the absence of magnetic field and quantum spin Hall effect in quantizing magnetic fields, have been theoretically proposed, but could not be observed so far largely due to disorder and density inhonogeneity. We show that weak magnetic field induces large bulk non quantized spin Hall effect in graphene. The effect occurs due to Zeeman spin splitting which generates the imbalance of the Hall resistivities of the two spin species. The spin Hall effect is robust in the presence of disorder and interactions. It will manifest itself in large nonlocal transport mediated by long lived spin currents, as well as in spin injection and spin accumulation experiments. The effect peaks at the Dirac point, and can serve as a hallmark of the relativistic character of carriers in graphene and other Dirac materials. Dmitry Abanin Princeton Date submitted: 30 Dec 2010 Electronic form version 1.4
author_names: Dmitry A Abanin

Kostya S Novoselov

Andre K Geim

Leonid S Levitov
title: Giant Spin Hall Effect and Nonlocal Transport in Graphene
year: 2011