Search query: Power semiconductor drives

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abstract: This textbook introduces students to the underlying principles of operation of power semiconductor drives. It explains every facet of application of power electronics to the control of electric motors in industrial drives. The book is primarily intended for B.E./B.Tech. students of Electrical Engineering/ Electrical and Electronics Engineering having courses in Electric Drives/ Power Semiconductor Drives. It will also be highly useful for M.E./M.Tech. students of these disciplines specializing in Power Electronics/Industrial Drives/Electric Drives. The text is divided into eight chapters. The first two chapters cover the control of dc motors by using various kinds of converters. The third chapter focuses on dual converters and various braking techniques. Chopper control fed dc motors are discussed in the fourth chapter. The next three chapters are devoted to control methods for induction motors. The eighth chapter deals with the control of synchronous motor drives fed from VSI converters and cycloconverters. Extensively illustrated, the book contains numerous solved examples throughout the text as well as a variety of chapterend questions to help in comprehending as well as in strengthening the grasp of the underlying concepts and principles. (Goodreads)
author_names: Shashi B Dewan

Gordon R Slemon

Alan Straughen
title: Power Semiconductor Drives
year: 1984

title: Power Semiconductor Drives
year: 2007

abstract: Proceedings ofthe Conference on Drives/Motors/Controls 84: ed. P. LAWRENSON and A.HUGHES (Peter Peregrinus, 1984,267 pp. PS25 U.K. PS32.50 elsewhere) Drives/Motors/Controls 84 was the third in a series of what is now a well established annual conference, the wide scope of which is described by its title. In view of the many conferences organised both in this country and abroad which cover similar topics, the increasing popularity of this conference is an indication that it certainly meets a requirement and satisfies a demand. An important feature of the conference is the high degree of interest shown, and support given by industrial organisations. The success of the conference is due not solely to the range of topics covered but in no small part to the manner in which this is done. This reviewer suspects that submissions from would be contributors are treated by the organisers in a manner which is rather more selective and discriminating than that used for some other conferences, a procedure which obviously improves the standard of the whole. Contributors are encouraged to keep high level mathematical treatments to a minimum and to emphasise practical aspects; this does not detract from the value of a contribution if it informs and educates system designers and potential users of a particular technique, material or device, and the result is a collection of contributions which are informative, often stimulating and easily digested. The Proceedings of the 3rd conference contains all contributions accepted and presented. Topics dealt with range from the characteristics of individual components such as power semi conductor devices, motors and inverters to the design of complete systems, including electrohydraulics, with discussion of industrial applications. Recent developments in stepping motors and position control techniques, brushless motors and permanent magnet machines and control of a.c. motors are the subjects of the bulk of the papers. For this conference, however, a significant proportion of the contributions is concerned with the effects of advances in digital techniques upon such aspects as control system design communications inside systems and diagnostics; approximately 25% of the Proceedings is made up of papers on programmable controllers, presented by engineers from industrial organisations. Although the aim of the conference is to act as an exchange of information at a somewhat practical level for system designers and manufacturers, rather than device specialists, the Proceedings acts as a guide to the directions in which industrial as well as academic institutions are moving in their research and developments. Such a guide is a valuable addition to the library for anyone interested in any aspect of drives, motors and/or their control. A. C. WILLIAMSON Department ofElectrical Engineering and Electronics. UMIST
author_names: G H Simmons
title: Book Review: Power Semiconductor Drives
year: 1985

author_names: P G Holmes
title: Power Semiconductor Drives
year: 1985

abstract: Historically, power semiconductor devices have been divided into three broad categories: diodes, transistors, and thyristors. Although modern devices can be classified in this way, there is an increasing overlap in device design and function. Also semiconductors, such as silicon carbide (SiC) gallium nitride (GaN) and other materials, as well as novel device designs have increased the suitability and broadened the applications of semiconductor switches in megawatt (MW) power conversion circuits and systems.
author_names: Jerry L Hudgins

Rik W De Doncker
title: Power Semiconductor Devices: For Variable Speed Drives
venue: IEEE Industry Applications Magazine
year: 2012

abstract: The electric propulsion drives for the more electric aircraft need lightweight and high efficiency power converters. Moreover, a modular approach to the construction of the drive ensures reduced costs, reliability, and ease of maintenance. In this article, the design and fabrication procedure of a modular dc ac three level t type single phase leg power electronics building block (PEBB) rated for 100 kW, 1 kV dc link is reported for the first time. A hybrid switch (HyS) consisting of a silicon insulated gate bipolar junction transistor (IGBT) and silicon carbide metal oxide semiconductor field effect transistor (MOSFET) was used as an active device to enable high switching frequencies at high power. The topology and semiconductor selection were based on a model based design tool for achieving high conversion efficiency and lightweight. Due to the unavailability of commercial three level t type power modules, a printed circuit board (PCB) and off the shelf discrete semiconductor based high power switch was designed for the neutral point clamping. Also, a nontrivial aluminum based multilayer laminated bus bar was designed to facilitate the low inductance interconnection of the selected active devices and the capacitor bank. The measured inductance indicated symmetry of both current commutation loops in the bus bar and value in the range of 28 29 nH. The specific power and volumetric power density of the block were estimated to be 27.7 kW/kg and 308.61 W/in3, respectively. The continuous operation of the block was demonstrated at 48 kVA. The efficiency of the block was measured to be 98.2%
author_names: Amol Deshpande

Yingzhuo Chen

Balaji Narayanasamy

Zhao Yuan

Cai Chen

Fang Luo
title: Design of a High Efficiency, High Specific Power Three Level T Type Power Electronics Building Block for Aircraft Electric Propulsion Drives
venue: IEEE Journal of Emerging and Selected Topics in Power Electronics
year: 2020

abstract: (This study is for special section `Design, modelling and control of electric drives for transportation applications' The conduction and switching losses of silicon carbide (SIC) and gallium nitride (GaN) power transistors are compared in this study. Voltage rating of commercial GaN power transistors is ;650 V, whereas that of SiC power transistors is ;1200 V. This study begins with a theoretical analysis that examines how the characteristics of a 1200 V SiC metal oxide semiconductor field effect transistor (MOSFET) change if device design is re optimised for 600 V blocking voltage. Afterwards, a range of commercial devices [1200 V SIC junction gate FET, 1200 V SiCMOSFET, 650 V SiC MOSFET and 650 V GaN high electron mobility transistor (HEMT) with the same current rating are characterised and their conduction losses, inter electrode capacitances and switching energy E sw are compared, where it is shown that GaN HEMT has smaller conduction and switching losses than SiC devices. Finally, a zero voltage switching circuit is used to evaluate all the devices, where device only produces turn OFF switching losses and it is shown that GaN HEMT has less switching losses than SiC device in this soft switching mode. It is also shown in this study that 1200 V SiC MOSFET has smaller conduction and switching losses than 650 V SiC MOSFET.
author_names: Ke Li

Paul Leonard Evans

Mark Johnson
title: SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions
year: 2017

abstract: This article analyzes the existing methods of increasing reliability through multiple overstatement of the installed power of electric equipment according to the criterion of minimum total yearly costs. The proposed method of optimization of power circuits of semiconductor converters includes stages of choosing the configuration of power circuits on the basis of the limit of semiconductor switches and choosing the optimal number of phases and redundant units. The distinguishing characteristic of the method is the criterion used, namely, the probability of failure free operation. This new method reduces the cost of installed power of a semiconductor converter compared to the known synthetic method on the level of total annual costs. It is shown that this method has some degree of flexibility; e.g. the development of the element base can be considered on the basis of the corresponding coefficients that depend on the operating temperature of power semiconductor valves. The proposed method can be successfully used in the design of semiconductor converters for supplying powerful electric drives, where, in the general case, the number of phases of a power circuit is not three. In this case, multiphase windings of an electric machine are connected according to a scheme with potential phase separation, which can be considered as an equivalent multiple redundancy system.
author_names: Artyom A Gryzlov

M A Grigor'ev

Azaliya A Imanova
title: Improving the reliability of semiconductor converters for supplying electric drives of exhausters
year: 2017

abstract: This paper addresses the timely issues of power loss calculation methods in the most common voltage source three phase PWM converters (VSC) There are mainly two kinds of power semiconductor losses to be considered, the conduction losses and the switching losses. A reconfigurable Induction Motor (IM) drive is controlled by the conventional PWM and space vector PWM based methods. The power losses will be evaluated with the different control strategies and verified based on the test bed using a control system rapid prototyping environment such as dSPACE.
author_names: Chris S Edrington

Oleg Vodyakho

Mischa Steurer

Sardis Azongha

Fletcher E Fleming

Mahesh Krishnamurthy
title: Power semiconductor loss evaluation in voltage source IGBT converters for three phase Induction Motor drives
venue: 2009 IEEE Vehicle Power and Propulsion Conference
year: 2009

abstract: Silicon Carbide (SiC) MOSFETs, as wide bandgap semiconductor device, are becoming increasingly popular. They can switch at much higher frequency when compared to their silicon (Si) counterparts and can viably supply high speed electrical drives. High speed machines are profitably used in aeronautical or electric vehicle applications, offering drastic reduction of encumbrance and weight. On the other hand, industrial motor drives usually include a long shielded cable to connect the inverter to the induction motor. This, together with high frequency operation of the SiC devices, emphasizes the effect of parasitics such as stray inductances and capacitances, which generates reflected wave transient overvoltage on motor terminals. In this paper, switching performance of SiC MOSFETs is systematically studied and compared to the performance of Si devices for low voltage induction motor loads. For the Si based inverter configuration the Neutral Point Clamped (NPC) 3 level inverter has been chosen, being it highly utilized in industrial applications. The two systems are compared in terms of switching performance, overvoltages, and power losses for the same output voltage capabilities. Simulations are carried out by realistic models of power switch modules. The goal was to analyze potential solutions for switching performance improvement and mitigation of reflected waves, as well as for future analysis of the electric aging phenomena.
author_names: Jelena Loncarski

Vito Giuseppe Monopoli

Riccardo Leuzzi

Francesco Cupertino
title: Operation analysis and comparison of Multilevel Si IGBT and 2 level SiC MOSFET inverter based high speed drives with long power cable
venue: 2019 International Conference on Clean Electrical Power (ICCEP)
year: 2019