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This task is about reading the given passage and construct a question about the information present in the passage. Construct a question in such a way that (i) it is unambiguous, (ii) it is answerable from the passage, (iii) its answer is unique (iv) its answer is a continuous text span from the paragraph. Avoid creating questions that (i) can be answered correctly without actually understanding the paragraph and (ii) uses same words or phrases given in the passage.

Passage: The French and Indian War (17541763) was the North American theater of the worldwide Seven Years' War. The war was fought between the colonies of British America and New France, with both sides supported by military units from their parent countries of Great Britain and France, as well as Native American allies. At the start of the war, the French North American colonies had a population of roughly 60,000 European settlers, compared with 2 million in the British North American colonies. The outnumbered French particularly depended on the Indians. Long in conflict, the metropole nations declared war on each other in 1756, escalating the war from a regional affair into an intercontinental conflict.
Solution: When was the French and Indian War?
Why? This question is based on the following sentence in the passage- The French and Indian War (17541763) was the North American theater of the worldwide Seven Years' War. It is a common convention to write (start year-end year) beside a historical event to understand when the event happened. You can ask questions like this one about dates, years, other numerals, persons, locations, noun phrases, verb phrases, adjectives, clauses etc. which exist in the paragraph.

New input: Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar npn transistor tends to be swifter than an equivalent pnp transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications.
Solution:
What semiconductor has the highest electron mobility?