Detailed Instructions: This task is about writing a correct answer for the reading comprehension task. Based on the information provided in a given passage, you should identify the shortest continuous text span from the passage that serves as an answer to the given question. Avoid answers that are incorrect or provides incomplete justification for the question.
See one example below:
Problem: Passage: The French and Indian War (17541763) was the North American theater of the worldwide Seven Years' War. The war was fought between the colonies of British America and New France, with both sides supported by military units from their parent countries of Great Britain and France, as well as Native American allies. At the start of the war, the French North American colonies had a population of roughly 60,000 European settlers, compared with 2 million in the British North American colonies. The outnumbered French particularly depended on the Indians. Long in conflict, the metropole nations declared war on each other in 1756, escalating the war from a regional affair into an intercontinental conflict. Question: When was the French and Indian War?
Solution: 1754-1763
Explanation: It is a common convention to write (start year-end year) beside a historical event to understand when the event happened. We can observe a similar notation from the passage to conclude that the French and Indian War happened during 17541763. Therefore, the answer is 17541763.

Problem: Passage: BJTs have three terminals, corresponding to the three layers of semiconductoran emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an npn transistor operating in the active region, the emitterbase junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) basecollector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. Question: What are the layers of semiconductor in a BJT?
Solution:
an emitter, a base, and a collector