ES Components is a Certified Woman Owned Small Business. WBENC Certified. 978-422-7641 IceMOS Technolgy PART SEARCH REQUEST QUOTE About IceMOS Superjunction MOSFETs Since Silicon became the major material for semiconductor devices in 1960's, many researchers have been investigating the limit of Silicon semiconductor performance. In fact, they have created several innovative materials which may potentially exceed Silicon performance, such as various compound semiconductor materials. Nevertheless Silicon has kept the position as leader of the semiconductor technologies all that long while for the reasons of easiness of manufacturing, high reliability, low cost and continuous innovation. In the power semiconductor technology world, there was the same event. In principal, breakdown voltage of MOSFET is dominated by carrier concentration of Silicon material and it is directly related to on-resistance of the device. Therefore power device performance is theoretically predicted - it is the so called "Silicon Limit". However "Superjunction" technology broke the "Silicon Limit" and achieved high voltage and low on-resistance, side by side. IceMOS MEMS MOSFET is the high voltage MOSFET of "Superjunction Technology". By the combination of Silicon MOSFET technology and MEMS process technology, IceMOS provides world-best-in-class performance. Well-known MEMS technology has been developed by unique manufacturing processes in contrast to MOSFET technology which continues progress mainly for smaller dimension. The combination of both technologies encourages advances in extreme performance of MOSFET. Superjunction MOSFET Superjunction Features Low On-Resistance Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Superjunction Applications Power supplies IT hardware : data center, servers, cloud, laptops, tablets Lighting : HID lamp and LED ballast LED TV drivers and power supplies Solar inverters Electric and hybrid cars Electric and hybrid cars Superjunction Portfolio A variety of voltages and packages for suitable applications: 600V 650V 700V 730V TO220 (Non-Isolated) TO220 Fullpak (Isolated) TO247 D2PAK / TO263 DPAK / TO252 I2PAK / TO262 IPAK / TO251 Global Operations: MOSFET R&D Modeling and Corporate Headquarters in Tempe Arizona (USA), MOSFET R&D and Design Center in Tokyo Japan, Starting Wafer & Substrate Manufacturing in Belfast Northern Ireland. Over 50% of the 98 worldwide employees have an engineering degree. Owner of over 80 granted patents, 6 pending, and 14 filed or disclosed. Three Product Families: • SOI/SiSi Wafers • Advanced Engineered MEMS Substrates • Superjunction MOSFETS Superjunction MOSFET Design - Less Processing Lower Cost High UIS Capability Application Guides & Specifications Fast Facts & Figures Company Overview Application Guide:High Voltage Superjunction MOSFET Press Release - IceMOS Moon To Mars INFORMATION… Site Map Terms & Conditions Of Purchase Order Terms & Conditions Of Quotation Certifications High-Tech Blog News Media Value-Add Services CONTACT US Phone: 978-422-7641 Fax: 978-422-0011 Email: sales@escomponents.com Feedback FOLLOW US ES Components | 108 Pratts Junction Road | Sterling, MA 01564 Copyright 2020 Eastern States Components, LLC. d/b/a ES Components All Rights Reserved. Powered by Squarespace