Welcome to Atomera Atomera has created a patented, quantum engineered material called Mears Silicon Technology™ (MST®) which enhances transistors to deliver significantly better performance in today’s electronics. This means your mobile phone will have longer battery life, IoT devices can be made smaller, and web servers will become even more powerful. What We Do Quantum Engineered Materials Making electronics faster and more efficient Expert Integration Engineering Support Atomera’s engineers enable customers to achieve peak performance with MST Licensing to the World’s Largest Semiconductor Companies An impressive portfolio of patents and know-how How It Works Quantum Engineered Superlattice MST impregnates silicon with partial monolayers of oxygen to stimulate faster and more controlled electron movement Diffusion Blocking and Control MST controls diffusion of dopants better than any other technique Markets of Interest Mobile Phones and 5G LEARN MORE Infrastructure LEARN MORE Internet of Things LEARN MORE What Are You Designing Today? Analog & Power 1.8 and 5V device enhancements with MST DRAM Higher performance at lower voltage operation FinFETs Better doping control enhances yield & operating range High-K Metal Gate Boosts performance for 28nm & beyond Image Sensors Dopant blocking improves performance & photosensitivity Logic & Processors Switching speeds accelerated by more than 20% RF Products RF Switch performance efficiency gains SRAM MST cuts costs by increasing yield Simulate your devices using MSTcad™ today Get Started with MSTcad™ Home Technology Applications Company Investors Contact © 2021 Atomera Incorporated. Privacy | Legal We use cookies on our website to give you the most relevant experience by remembering your preferences and repeat visits. By clicking “Accept”, you consent to the use of ALL the cookies. SETTINGS ACCEPT

Technology MST - Mobility Electrons and Hole Move Faster with MST Mobility Plots Diffusion Blocking Variability Mobility Gate Leakage Reliability MST Technology can significantly increase the mobility of electrons and holes This effect allows semiconductor devices to provide more current for the same voltage, leading to higher performance, or alternatively, lower off-state leakage current for the same performance As planar devices shrink and the operating voltage is lowered, MST mobility enhancement is even more pronounced due to the reduction of doping near the gate dielectric interface Home Technology Applications Company Investors Contact © 2021 Atomera Incorporated. Privacy | Legal We use cookies on our website to give you the most relevant experience by remembering your preferences and repeat visits. By clicking “Accept”, you consent to the use of ALL the cookies. SETTINGS ACCEPT