ResourceXplorer Find our technical papers, webinars, articles The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies. 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Next Photon meets Electron – Introducing X-FAB’s new APD/SPAD devices and how to use them in your next IC design Published: May 2021 Be aware of the avalanche! Are you planning to integrate Avalanche Photodiodes (APD) or Single Photon Avalanche Diodes (SPAD) into your next IC design? If yes, you should watch this webinar replay. It will cover X-FAB's new APD/SPAD devices which come with a high photon detection probability of up to 18% for 850 nm wavelength and a low dark count rate. You will also learn about the integrated trigger diode which allows precise, real-time on-chip breakdown voltage detection without an external light source. READ MORE Posted in: Webinar Recording --- Technical Categories: Opto Introducing X-FAB's enhanced Photodiodes - Supporting the entire light spectrum from UV to Near-infrared light Published: Apr 2021 X-FAB has been providing photodiodes for more than 20 years. In this webinar we are proud to introduce our new core process optimized for photodiodes. This has been developed based on the feedback and requests from you - our customers. The technology comes with a number of photodiodes with outstanding performance for UV, ambient and near-infrared light. It also offers a range of other devices to enable fully integrated low-noise sensor designs. READ MORE Posted in: Webinar Recording --- Technical Categories: Opto Design Robustness – Enabling First-Time-Right by Innovative PDK Features and Design Methodology Published: Oct 2020 (Webinar is presented in Mandarin) More complex designs, shorter time to market and less time for engineering – these are the challenges IC designers are facing today. X-FAB will be addressing these topics to assist you in your design process and to support you to achieve First-Time-Right designs. READ MORE Posted in: Webinar Recording --- Technical Categories: First-Time-Right Micro-transfer-printing at X-FAB: Demonstration of a New Technology For 3D Wafer Level Packaging Published: Oct 2020 - Micro-Transfer-Printing (µTP) was introduced as a new and promising technology for 3D- and heterogeneous integration. - The main advantage of µTP is the parallel placement of up to thousands of small chiplets with a very high printing accuracy. READ MORE Technical Categories: Wafer Manufacturing, More than Moore Partial SOI as a HV platform technology for Power Integrated Circuits Published: Sep 2020 Partial SOI (PSOI) is revisited as a suitable High Voltage (HV) architecture for Power Integrated Circuits (PICs). The added process complexity compared to SOI RESURF is offset by the better heat conduction due to thinner BOX, the wider voltage range capability and the reduced parasitic capacitance to the Handle Wafer (HW). The new proposed platform technology is therefore particularly relevant to the manufacturing of high voltage integrated circuits (HVICs) where low Ron, fast switching and reduced self-heating are essential. This work reports on the extension of a 200V PSOI process to 400V while providing competitive Ron and low HCI degradation. READ MORE Posted in: Paper --- Technical Categories: High-Voltage Making Silicon-based Microfluidics Work – Solutions for Cost-effective Integrated Microfluidic Systems Published: May 2020 Connecting the two worlds of microelectronics and fluids handling is a challenge and an opportunity at the same time. Smart microfluidic systems are the key to connect both worlds, which is of great value in applications where integrated circuitry for control or signal processing is required. X-FAB’s extensive MEMS-oriented technology offering enables such innovative applications including devices for next-generation DNA sequencing, liquid biopsy and micro electrode arrays for drug development or food safety testing. This webinar will address the challenges that arise when combining integrated circuits with microfluidics. It will provide an overview of X-FAB’s portfolio of process capabilities for silicon-based microfluidics with a focus on process integration know-how including READ MORE Posted in: Webinar Recording --- Technical Categories: Medical, MEMS Al/Ge EUTECTIC WAFER BONDING FOR MEMS/CMOS VACUUM PACKAGING Published: Dec 2019 In this work we demonstrate application of Al/Ge eutectic vacuum packaging of a CMOS/MEMS wafer to a Cap wafer for infrared sensors. Optimum Al/Ge integration and bonding procedure result into noticeable enhancement of thermopile-pixel responsivity. In addition, critical parameters along process variation, which can be beneficial to other types of CMOS/MEMS devices with variable process integration approaches, are discussed. READ MORE Posted in: Paper --- Technical Categories: Wafer Manufacturing, MEMS Chip-level Teststrukturen zur Messung mechanischer Schichteigen-schaften unter Bedingungen der Massenproduktion Published: Oct 2019 Abstract This contribution investigates the suitability of chip-level tests for the mechanical characterization of thin films in a mass production environment. The parameters of intrest are the Young´s modulus, the residual mechanical stress as well as its gradient along the film thickness and the critical fracture stress. For the measurement of these parameters the electrical measurement equipment for end of line testing in CMOS industries is used. READ MORE Technical Categories: Automotive, Wafer Manufacturing, Characterization New integration technology for 5G application Published: Oct 2019 READ MORE Technical Categories: RF Impact of Bond Pad Thickness on Polysilicon Resistance Change Due to Probing Published: Sep 2019 Polysilicon is an integral part of many devices in all CMOS process. Very consistent and accurate electrical performance of such material is a need of those devices used in Circuit Under Pad (CUP) applications. This paper presents an investigation on stress impact of probe insertions on two bond pad metal options i.e. METMID and METTHK on a polysilicon resistor placed under the bond pad. Probing results in residual stress on both Back End Of Line (BEOL) as well as Front End Of Line (FEOL) structures. This residual stress would impact the electrical properties of the polysilicon material used in such devices. In this study, such electrical impact is measured in terms of change in resistance of a polysilicon resistor which was placed underneath the bond pads. READ MORE Posted in: Paper --- Technical Categories: Simulation, First-Time-Right, Automotive Previous 1 2 3 4 5 6 7 ... Next ABOUT US News & Events Investors Career MARKETS Automotive Medical Industrial Communication & Consumer TECHNOLOGY High Voltage e-NVM CMOS & MEMS Sensors RF SiC & GaN WLP & 3D Integration Silicon-based Microfluidics Innovation MANUFACTURING Our Fabs Supply Chain Management Quality Prototyping Outsourcing DESIGN SUPPORT FeatureXplorer ResourceXplorer X-CHAIN IP Portal © 2021 X-FAB Silicon Foundries SE COOKIE SETTINGS We use cookies and other tracking technologies to personalize and improve your experience. By continuing to use our website you consent to this. More info Necessary cookies Statistics SELECT ALL SAVE Show details Imprint | Datapolicy