English (EN) Services Contact Menu Fusion and Hybrid Bonding EV Group Technologies Fusion and Hybrid Bonding Fusion and Hybrid Bonding Fusion and Hybrid Bonding for Engineered Substrates and 3D Device Integration Introduction Features Introduction Fusion or direct wafer bonding enables permanent connection via dielectric layers on each wafer surface used for engineered substrate or layer transfer such as backside illuminated CMOS image sensors. Hybrid bonding extends fusion bonding with embedded metal pads in the bond interface, allowing for face-to-face connection of wafers. The main application for hybrid bonding is in advanced 3D device stacking. Fusion or direct wafer bonding allows dielectric layers and more precisely activated dangling of functional groups to bridge between wafers with the help of hydrogen bridge bonds. This pre-bonding step takes place at room temperature and atmospheric condition. Only during a subsequent annealing step are low-energy hydrogen bridge bonds turned into covalent bonds. Fusion bonding is traditionally applied for engineered substrates and more recently to stack wafers using full-area dielectrics. Due to pre-bonding at ambient conditions, a very high alignment of less than 100 nm allows for 3D integration scenarios using wafer-to-wafer fusion bonding. In addition, copper pads can be processed in parallel with the dielectric layer, allowing one to pre-bond the dielectric layer at ambient temperature, while electrical contacting can be achieved during annealing via metal diffusion bonding. This special case is called hybrid bonding. The main applications for hybrid bonding include CMOS image sensors, memory as well as 3D system-on-chip (SoC). Features Layer transfer for engineered substrates such as Silicon on insulator, RF compatible substrates, and backside illuminated image sensors Wafer-to-wafer interconnection with high alignment needs down to 50 nm for 3D system-on-chip devices, chip stacking and die partitioning Hybrid bond capability for simultaneous mechanical and electrical connection with very low connection pitch of less than 1 micron Events SEMICON Europa 2021 MESSE MÜNCHEN | Co-located with Productronica 16.11. - 19.11.2021 Munich, Germany SEMICON Japan 2021 Venue: Tokyo Big Sight/Online 15.12. - 17.12.2021 Tokyo, Japan Show all events Related downloads EVG Solutions for MEMS Brochure - 2.28 MB EVG Solutions for Bio- and Medical Technology Brochure - 2.03 MB EVG GEMINI® Series Brochure - 2.12 MB Talk to our EVG technology experts! Questions? Contact form Related products EVG®850 LT Automated Production Bonding System for SOI and Direct Wafer Bonding EVG®850 Automated Production Bonding System for SOI BONDSCALE® Automated Production Fusion Bonding System GEMINI® FB Automated Production Wafer Bonding System SmartView® NT Automated Bond Alignment System for Universal Alignment Questions about our technologies? Contact the EVG experts Send us a message Related News From wafers to power electronic applications: new consortium to create European supply chain for silicon carbide semiconductors Oct, 2021 EV Group Celebrates “40+1 Year” Anniversary with Exciting Live Event at Corporate Headquarters Sep, 2021 Applied Materials Introduces New Technologies and Capabilities for Accelerating the Semiconductor Industry's Heterogeneous Integration Roadmap Sep, 2021 EV Group Products Technologies Company Careers Social Media LinkedIn Facebook Twitter YouTube Join our newsletter We will send you updates on new products and technologies. Your Email Subscribe © 2021, EV Group (EVG) Imprint Privacy Policy Terms of use