IC MANUFACTURING COMPOUND SEMICONDUCTORS WAFER LEVEL PACKAGING TECH PAPERS COMPANY INVESTORS CONTACT Tahoe Cleaning System—Ultra C Tahoe For advanced technology node SPM cleaning processes High-performance, eco-friendly SPM cleaning technology “Ultra C” stands for “ultra-clean”—and with the Ultra C Tahoe cleaning system, this means both to the processes the tool performs, as well as its impact on the environment. The Ultra C Tahoe system takes sulfuric peroxide mix (SPM) cleaning to the next level by reducing the amount of sulfuric acid needed for the process, which in turn lowers both chemical and post-process waste treatment costs. Tahoe is the better choice for advanced node applications Conventional SPM cleaning is performed in a wet bench tool using sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) to remove unwanted materials from silicon wafers during photoresist strip, post-etch clean, post-implant clean and post CMP clean processes. Today’s SPM bench tools cannot achieve the cleaning performance required for technology nodes below 28nm, leaving SPM single wafer processing as the only solution. However, the single wafer SPM process requires the SPM mixture to be heated to high temperatures, which calls for high chemical usage and releases sulfuric acid waste in the process, thereby harming the environment. The Ultra C Tahoe mitigates these challenges using a two-step approach to optimize the advantages of wet bench and single wafer cleaning. First, the wafers are run through a batch cleaning step in the wet bench module, processed by SPM, and then go through quick dump rinsing (QDR). While still wet, the wafers are transferred to the single wafer module for further cleaning, using a standard RCA cleaning process or other process chemicals. The single wafer chamber is very flexible, and an isopropyl alcohol (IPA) vapor drying function can also be integrated for the patterned wafer drying process. Options include a N2 spray arm or megasonic cleaning with ACM Research’s Smart Megasonix™ arm. No H2SO4 is used during the single wafer step, thereby reducing chemical use and minimizing waste. Ultra C Tahoe cleaning applications The Tahoe is the ideal solution for advanced node SPM cleaning applications, including: SPM photoresist stripping Post etch cleans Post IMP cleans Post CMP cleans Major Benefits Improved processes The Ultra C Tahoe is ideal for removing particles from fine features. It outperforms both bench and single wafer approaches by integrating the advantages of both tools into one system. It delivers high-performance cleaning with a minimum 80% reduction in sulfuric acid use compared with conventional single wafer SPM cleaning tools. Environmentally-friendly Like its namesake, Lake Tahoe, known for its clean water, the Ultra C Tahoe is designed with the environment in mind. Less sulfuric acid means lower temperature processes, less waste, and a reduction in chemical consumption when compared with SPM wet bench or SPM single wafer systems. Lower cost The Ultra C Tahoe’s low SPM consumption rate saves on chemical cost as well as waste treatment cost. It incorporates innovative and patented technology to deliver high cleaning performance, while using no more than 20% of the sulfuric acid typically consumed by conventional single wafer SPM cleaning tools. Features & Specifications Low cross-contamination risk Excellent particle removal performance 300mm wafer compatibility Flexible chemical combinations are enabled by the single wafer module; platform accommodates up to four arms for dispensing up to three process chemicals Options include: N2 Spray Smart Megasonix™ Unit Customizable to dispense: Standard clean (SC1) Hydrofluoric acid Ozonated deionized water (DI-O3) Other process chemicals Qualified on volume production lines Customized and configured to customer specifications Interested in Tahoe Cleaning System? Contact Us News © 2021 ACM Research, Inc.. All rights reserved.