News/Events Investors Career Tools My X-FAB Contact Search ABOUT US MARKETS TECHNOLOGY MANUFACTURING DESIGN SUPPORT Connecting people and devices worldwide AREAS OF EXPERTISE APPLICATIONS RELATED NEWS RF and Wireless In today’s connected world, radio frequency (RF) electromagnetic signals are key for enabling many everyday tasks. Making a phone call or browsing the Internet with your smartphone at home or on the street is only possible with RF signals. Likewise, it is thanks to RF signals that you can find the right direction to your destination with your car’s on-board GPS device. RF signals are used not only for human–machine interfaces, but also for machine-to-machine communication. As wireless means of communication, they enable more flexibility and scalability without overloading existing infrastructures with cables or wires. To satisfy the corresponding demand, we offer RF solutions for various applications, such as: Cellular standards: 2G, 3G, 4G (LTE) and now 5G NR WLAN connectivity: up to 802.11ax, Wi-Fi 6 Short and medium range communication, such as Bluetooth Positioning: GPS, Galileo, BeiDou or GLONASS Vehicle-to-everything communication (V2x) Internet of Things (IoT): RFID and low-power networks, such as LoRa or Sigfox Around 25% of the smartphones shipped worldwide contain a chip produced by X-FAB. Areas of expertise RF SOI Our RF SOI technology is made available through a 130 nm feature-rich, modular RF platform that allows you to achieve low-loss, high-isolation and low-noise RF designs. READ MORE Solutions RF SOI platform – XR013 XR013 is our 130 nm modular, feature-rich RF SOI technology solution suitable for multiple air interface standards and both fixed and mobile applications, such as smartphones, infrastructure and WLAN connectivity devices. The high isolation and low insertion losses make XR013 a good fit for RF switching applications in front-end modules for 2G, 3G, 4G LTE Advanced and 5G New Radio designs. Low-noise amplifiers demonstrating low noise figure, high gain and high linearity thanks to NFET options complete our XR013 RF SOI offer. Standard features include a twin-well 2.5 V CMOS technology on a linear, high-impedance SOI substrate with four levels of metal in a hybrid copper and aluminum metallization that supports wire bond, bump, or Cu pillar chip–package interfaces and a large array of passive analog RF devices. Optional features include a range of FET devices such as multiple threshold voltage (Vt) options, up to two additional digital routings and up to two additional thick copper metal levels. The technology offers a comprehensive set of components supported by Si-proven, advanced RF models. In addition, as design enablers, we have created and provide a wide range of IP blocks. With economy of scale advantages and opportunities for further innovative RF integration, XR013 deliver both performance and cost advantages. All in all, our XR013 platform offers flexibility to customize and create cost-effective configurations with few mutually exclusive features. Key features: Low RonCoff figure of merit for RF switches with surface-potential-based (PSP) compact models, including advanced modelization of a high-impedance SOI substrate Low-noise, high-gain, high-linearity NFET options for RF switch and low-noise amplifier integration 2.5 V CMOS platform with hybrid Cu/Al metallization with optional thick Cu levels Both low- and high-value diffusion and poly resistors including a 3 kΩ/sq p-poly resistor High-density vertical RF metal–insulator–metal (MIM) capacitor and vertical parallel plate capacitors (VPP) Large catalog of high-Q, symmetric, octagonal inductors for multiple metallization configurations 1.2 V- and 2.5 V-based RF varactors Optional low-leakage 1.2 V CMOS module Si-proven RF reference kits Si-proven analog and digital IP Si-proven I-fuse OTP memory IP by Attopsemi Si-proven eFuse and supporting IP Si-proven general-purpose input/output (GPIO) libraries including electrostatic discharge (ESD) solutions Cadence-based front-end design flow with back-end support for both Cadence and Mentor RF CMOS XC018 XA035 XH035 XO035 180 nm modular CMOS technology The XC018 series is our 180 nm modular mixed-signal technology based on the industrial standard single-poly, triple-metal (1P3M) process. Thanks to the modular approach, a wide selection of options, such as standard or low-power 1.8 V core voltage with either 3.3 V or 5.0 V I/O voltage, can be easily integrated. XC018 also features process modules such as up to six layers of metal, single, double or triple MIM capacitors and high-resistivity polysilicon. MOS and bipolar transistors are also available. RF CMOS is made available through precise characterization of primitive devices, including RF transistors, varactors and large Q-factor inductors. Options in development, such as embedded non-volatile memory and optoelectronic modules, will make XC018 even more feature-rich. The platform is ideal for SoC systems. Main target applications are standard cell, semi-custom and full custom designs for consumer, industrial and communications products. The standard process is ideally suited for micro controllers, while the low-power process is ideal for mobile applications. Key features: 1.8 V core with 3.3 V or 5.0 V input/output option 180 nm single poly, up to six-metal N-well CMOS basic process Standard and low power modules Direct shallow trench isolation (STI) Isolation well for all 1.8 V, 3.3 V and 5.0 V MOS devices High resistivity poly resistor module Single, double and triple metal-insulator-metal (MIM) capacitors Thick metal module Polyimide module Input/output cell library with 4 kV human body model ESD protection levels RF characterization and models for all RF MOS transistors and passive components Thick top metal for inductors and smart power applications Calibre & Assura verification deck Cadence PDK BiCMOS XB06 – 0.60 µm modular CMOS technology The XB06 series is our 0.60 µm BiCMOS technology. Main target applications are RF circuits and high-precision analog applications mixed with digital parts for telecommunication, consumer, automotive and industrial products. The digital part is fully compatible with the CX06 0.60 µm process family. Reliable design rules, precise SPICE models, digital libraries and analog IP together with support for all major EDA tools provide an efficient chip design ecosystem. Key features: 0.60 µm double poly, double metal N-well CMOS process Standard CMOS Core Module (2P2M) PIN diode with improved sensitivity (at 405 nm) for high-speed optical applications Junction FET transistor, light shield and polyimide module Natural PMOS module for PIN module Circular n-channel junction FET transistor Schottky diode with improved forward characteristics 5 V and 3.3 V cell libraries HV depletion transistor No-burried-layer-doping module Optoelectronic integrated circuit and RF cells libraries High frequency NPN transistor with poly emitter and buried collector 0.5 µm bipolar module Large number of bipolar primitive devices Varicap diode module Double poly capacitor module with high capacity per area Single metal-insulator-metal (MIM) capacitors for RF and high linear applications High resistivity poly resistor module MOS varactor & third metal layer Special inductors in third thick metal Optical window module Electrostatic discharge (ESD) protection in accordance with MIL-STD High-density RAM, DPRAM, ROM blocks OTP options: zener-zaps and poly fuses EPROM option Applications Cellular handsets and tablets Cellular handsets and tablets supporting cellular air standards from 2G to 5G New Radio (Sub-6 GHz) ... more WLAN connectivity The Wi-Fi standard has become part of our everyday lives at home, at work, on the road – everywhere. ... more Base stations and small cells Small cells bring a significant network coverage improvement for 4G and 5G standards, but also for legacy standards (2G and 3G). ... more V2X communication Reducing road fatalities is a common goal of all automotive players worldwide. In this context, vehicle-to-everything (V2X) communication based on ... more IoT devices Smartphones and computers are not the only devices connected to a network. Internet of Things (IoT) devices use various wireless standards (Sigfox, LoRa, etc.), ... more Related news Mar 17, 2021 X-FAB Enters into Collaboration with IHP to Progress SiGe BiCMOS Technology Tessenderlo, Belgium and Frankfurt/Oder, Germany – March 17, 2021 X-FAB Silicon Foundries and IHP - Leibniz Institute for High Performance Microelectronics have announced a major… READ MORE Oct 08, 2020 Attopsemi’s I-fuse™ Memory Solution Now Qualified and Available on X-FAB’s 130nm RF-SOI Technology X-FAB Silicon Foundries, the leading analog/mixed-signal and specialty foundry, together with Attopsemi, innovator of I-fuse™ one-time programmable (OTP) IP solutions, have entered… READ MORE MORE NEWS Contact David Auffret Technical Marketing Manager RF David.Auffret@xfab.com For more information, please contact us: NAME* E-MAIL* MESSAGE* By submitting the form you agree to our privacy policy. I agree to my data being stored and processed by X-FAB. 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