Home page Department Contact us Home page Who are we Techniques Industries served Application solutions News Contact us Techniques Auger AFM EBSD EDS FIB FTIR GC-MS GDMS ICP-OES / MS IGA LA-ICP-MS LEXES OP Raman RBS SEM SIMS TEM / STEM Thermal analysis TOF-SIMS TXRF XPS / ESCA XRD XRF XRR Home page > Department> Characterization of Materials > Techniques > FTIR Fourier transform infrared spectroscopy, FTIR analysis request for services " In an analysis by s infrared pectroscopie Fourier transform (FTIR, from the English " Fourier Transform Infrared Spectroscopy "), one obtains a spectrum showing the molecular vibrations to modify or characterizing organic materials such as polymers, lubricants, adhesive and cleaning agents . A limited number of inorganic compounds can also be assessed using FTIR analysis. For semiconductors, FTIR is used to make quantitative measurements of hydrogen bonds to silicon nitride to measure the pore oxygen content in silicon bulks. At Evans Analytical Group ® (EAG), almost all FTIR analyzes are done with an FTIR microscope. The micro-FTIR, with a minimum beam spot setting of 15µm, is ideal for direct in situ analysis of organic contaminants on metal surfaces such as solder tabs or contacts. For the identification of contaminants on non-metallic surfaces, such as lenses or other optical components, or for the analysis of organic materials in the form of bulk density blocks, EAG uses specialized preparation methods. some samples. EAG's analytical research scientists have extensive experience and knowledge in the application of FTIR analyzes to a wide variety of problems relating to organic materials or organic contaminants. Experience, fast delivery times, clear and concise written reports, and person-to-person service: this is what we offer to help our customers solve their material problems. Ideal uses Technical specifications Strong points Limits Industries served Identify organic contaminants (e.g. particles, residues) Characterization or identification of organic materials (e.g. solids, powders, layers or liquids) Quantification of O and H in wafers (substrates) Si, and of H in SiN wafers (Si-H versus NH) 94, chemin de la Peyrette 31170 Tournefeuille, France © Copyright 2016 EAG Inc. | All Rights Reserved | Legal Notice