Home page Department Contact us Home page Who are we Techniques Industries served Application solutions News Contact us Photovoltaic / solar Evaluation of reactions on Silicon wafer photovoltaic modules Α-Si and μc-Si thin-film photovoltaic technologies CdTe Thin Film Photovoltaic Products Thin Film Photovoltaic Modules III-V for photovoltaic concentrator Home page > Department> Material characterization > Industries served > Photovoltaic / solar Photovoltaic / solar request for services " For more information, please click on one of the apps in the image below. The Evans Analytical Group® (EAG), with its wide range of analytical techniques and world-class scientists, can make rapid, state-of-the-art measurements that help you get the knowledge you need. to improve the performance of your product and your manufacturing processes. Discussions on photovoltaic applications for industry: Evaluation of silicon materials for photovoltaic products Silicon wafer photovoltaic products (substrates) Amorphous and monocrystalline thin-film photovoltaic products CdTe Thin Film Photovoltaic Products CIGS Thin Film Photovoltaic Products III-V semiconductors for photovoltaic concentrator 94, chemin de la Peyrette 31170 Tournefeuille, France © Copyright 2016 EAG Inc. | All Rights Reserved | Legal Notice

Home page Department Contact us Home page Who are we Techniques Industries served Application solutions News Contact us RBS Ion Channeling HFS NRA Home page > Department> Characterization of Materials > Techniques > RBS Rutherford backscatter spectrometry, RBS analysis request for services " Rutherford Backscattering Spectrometry (RBS, short for " Rutherford Backscattering Spectrometry ") is an ion scattering technique used for the compositional analysis of layers. RBS analysis is unique in that it allows quantification without using reference standards. During an RBS analysis, high energy (MeV) He 2+ ions ( i.e., alpha particles) are directed to the sample and the energy distribution is measured and the yield of He 2+ ionsbackscattered at a given angle. As the backscattering cross section of each element is known, it is possible to obtain a quantitative compositional depth profiling of the obtained RBS spectrum, for layers which are less than 1 μm thick. Evans Analytical Group ® (EAG) has world-class experience in thin film analysis using RBS analysis, with both pelletron and tandetron instrumentation. EAG's experience in analyzing all types of thin semiconductor layers (oxides, nitrides, silicides, high and low K constant dielectrics, metallic layers, compound semiconductors and dopants) allows you to have fast turnaround times, accurate data and high quality person-to-person service. Hydrogen Forward Diffusion Spectrometry (HFS) Nuclear Reaction Analysis (NRA) Ideal uses Technical specifications Strong points Limits Industries served Composition / thickness of thin layers Determine the zone concentrations (atoms / cm2) Determine the density of the layers (when the thickness is known) 94, chemin de la Peyrette 31170 Tournefeuille, France © Copyright 2016 EAG Inc. | All Rights Reserved | Legal Notice