STR Group Modeling of Crystal Growth and Devices Home About Consulting Products Learn Publications Events Distributors Contact PRODUCTS SimuLED (LED&LD) CGSim (melt) CVDSim (epi) PolySim (Siemens) Virtual Reactor SiLENSe (LED&LD) SpeCLED (LED) RATRO (LED) BESST (III-N SLs) FETIS (HEMTs) PVcell SELES STREEM CONSULTING PVT Growth CVD of Si-based CVD of III-Vs Growth from Melt Device Modeling 2015.09.01 Virtual Reactor version 7.4 has been released The key modifications include the two-waveband semi-transparency model, improvement of the boundary shifting algorithm in VR-PVT SiC, and improvement of the convergence stability in VR-NE, VR-III-V and VR-CVD SiC editions. 2015.04.29 STR Group has released the Crystal Growth Simulator CGSim 15.2. STR Group has released the Crystal Growth Simulator CGSim 15.2. A variety of new options is offered; in particular, chemical models for growth of SiC and GaN from solution have been recently implemented. New settings of the solver interface and graphical user interface provide users more flexibility. Solver stability is improved and a few minor bugs are fixed. 2015.01.19 SiLENSe 5.8 has been released SiLENSe Version 5.8 & Version 5.8 Laser Edition have been released. New options are listed below: Import of the simulation results for the layer composition and relaxation obtained by STR STREEM InGaN software. Spatial variation of layer composition can now be specified as a custom function of the position. Generation of the computational grid is considerably changed and more options for control of the grid is available for users. Pause/continue button is added to the solver control window. A number of minor errors has been fixed, while non of them provide wrong simulation results. 2014.09.29 STR Group announces a new release CGSim 15.1 CGSim 15.1 provides users a unique opportunity to calculate unsteady crystal growth processes, from furnace heating up to cooling down, within a single computation. Such computations can be performed for multiple processes and materials. These computations are supported by new functions, which include specification of time dependent gas flow rate, pressure, material properties, and possibility to change heater control algorithm (direct to inverse and back) within a single computation. more... 2013.09.17 CGSim 14.1 has been released CGSim 14.1 has been released. New version contains a number of updates and added capabilities, including continuous modeling of stress relaxation and dislocation evolution during both crystallization and cooling stages. more... 2013.01.30 SiLENSe 5.4 has been released SiLENSe Version 5.4 & Version 5.4 Laser Edition have been released. Redesigned interface for working with material properties enables specification of the flexible user-defined functional or tabulated dependencies on the temperature, alloy composition, and wavelength. Another new option is simulation of PL experiment with resonant excitation. more... 2012.07.05 CGSim 12.1 has been released STR Group has launched a new release of crystal growth simulation software: CGSim 12.1. Designed for crystal growth optimization, CGSim software has extended its modeling capabilities for more accurate and fast optimization of crystal growth processes. The major improvements have been implemented in modeling of electromagnetic effects, species transport coupled with time and temperature dependent species deposition, thermal stresses and dislocations. more... news archive SITE SEARCH: Subscribe to STR Newsletter Download free Software DEMO Versions and Documentation © STR 2013. All rights reserved.