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View our Cookie and Privacy Policy No Problem MENU search FREE Registration Media Kit 2021 Download Full information about advertising options with Semiconductor Today can be found by clicking here, or for easy printing, PDF versions are available using the links below: $ USD Media Kit PDF € Euro Media Kit PDF £ Sterling Media Kit PDF News Subsites LEDs Markets Microelectronics Optoelectronics Photovoltaics Suppliers 3 December 2021 HG completes share placement to boost R&D Hong Kong-based LED maker setting up factory in Xuzhou for GaN electronic devices 3 December 2021 Smartphone shipments to grow 5.3% in 2021, despite lower-than-expected Q3 amid supply chain constraints Growth forecasts lowered for 2021 from 7.4% to 5.3% and for 2022 from 3.4% to 3% 3 December 2021 CSconnected sponsors Wales regional session at UK CBI Annual Conference Compound semiconductor cluster to push job creation from 1500 to 5000 over next five years 3 December 2021 Nexperia using Aixtron equipment as it enters silicon carbide power electronics market Fully automated AIX G5 WW C system being used for volume production of SiC epiwafers 2 December 2021 Slow-light VCSEL power boost Single-mode device achieves more than 5W output power 1 December 2021 Soitec and Mersen partner to develop poly-SiC substrates for EV market Low-electrical-resistivity poly-SiC to optimize SmartSiC-based power electronics 1 December 2021 Annual 6-inch SiC wafer demand for EVs to reach 1.69 million units in 2025 Arrival of 800V EV charging architecture to drive replacement of Si IGBT modules 1 December 2021 Soitec acquires NOVASiC to aid industrialization of SmartSiC for automotive and industrial markets NOVASiC’s wafering, polishing and reclaiming complements Soitec’s SmartCut-based technology News Features 25 November 2021 Defect-tolerant type-II QW lasers on silicon Estimated 312,000 hour mean time to failure, “first report” beyond 1000 hours. 18 November 2021 InP-lithium niobate hybrid laser Researchers claim first electrically pumped LN/III-V laser. 12 November 2021 Metal modulated AlGaN superlattices Epitaxy technique results in highly coherent self-assembled structures. 4 November 2021 AlN passivation for InGaN micro-LEDs Atomic layer deposition on sidewalls leads to emission and detection efficiency boosts. 28 October 2021 HVPE p-GaN vertical pn diodes A single process, including p-type layers, enables ideal breakdown behavior. 22 October 2021 Silicon nanocrystal white LED progress Devices achieve peak luminance of 2060cd/m2 and external quantum efficiency of 0.16%. Sign Up to Our Free Weekly E-Brief PDF Back Issues Follow us on Twitter Join our LinkedIn network Follow us on Facebook Feature Downloads 1 November 2021 GaN complementary logic platform Researchers see potential for monolithic peripheral control for power electronics, radio-frequency power amplifiers and harsh-environment applications. 1 November 2021 Epitaxy equipment market growing at 8% CAGR to $1.1bn in 2026 China comprised 57% of Aixtron’s revenue in 2020 but just 13% of Veeco’s, says Yole Développement. 1 November 2021 More evidence provided for Auger causing GaN LED efficiency droop Electron emission spectroscopy supports a three-body mechanism for energy sapping processes. 1 November 2021 Stacking three III–nitride light-emitting diodes First triple-junction monolithic cascade structure enabled with improved MOCVD tunnel junctions. 1 November 2021 SMART uses intrinsic defects to form indium-rich quantum dots yielding longwavelength InGaN LEDs V-pit-induced pyramids could provide the basis for the future development of monolithic RGB micro-LED arrays on silicon. 1 November 2021 Increased current for red InGaN micro-LEDs Researchers have achieved power density comparable to AlGaInP devices targeting display applications. 1 November 2021 Red InGaN micro-LEDs for displays Researchers find more stable external quantum efficiency at smaller sizes relative to the AlInGaP alternative. 1 November 2021 MOCVD tunnel junctions beat ITO for blue micro-LEDs Chemical treatment enables significantly higher external quantum efficiency and wall-plug efficiency. 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