Products Solutions Design Support Company Careers EN Products Discrete & Power Modules Silicon Carbide (SiC) Silicon Carbide (SiC) By Technology Discrete & Power Modules MOSFETs Power Modules Silicon Carbide (SiC) Silicon Carbide (SiC) Diodes Silicon Carbide (SiC) MOSFETs Protected MOSFETs Rectifiers Schottky Diodes & Schottky Rectifiers Audio Transistors Darlington Transistors ESD Protection Diodes General Purpose and Low VCE(sat) Transistors Digital Transistors (BRTs) JFETs Small Signal Switching Diodes Zener Diodes RF Transistors RF Diodes Monolithic Microwave Integrated Circuits (MMIC) IGBTs Power Management Signal Conditioning & Control Sensors Motor Control Custom & ASSP Interfaces Wireless Connectivity Timing, Logic & Memory By Solution Automotive Industrial Cloud 5G & Enterprise Internet of Things (IoT) Mobile Product Services Hide side navigation Silicon Carbide (SiC) A full ecosystem of parts to support wide bandgap power designs, including SiC diodes, SiC MOSFETs, and SiC Modules. By Technology Silicon Carbide (SiC) Diodes These products use a completely new technology that provides superior switching performance and higher reliability to silicon. View Parametric Table Silicon Carbide (SiC) MOSFETs These products are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. View Parametric Table By Module Silicon Carbide (SiC) Modules These products contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V. View Parametric Table Silicon Carbide (SiC) Technology Benefits SiC devices have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy band gap, and 3x higher thermal conductivity compared to Silicon devices. High Reliability onsemi SiC devices have a patented termination structure which provides superior robustness for harsh environmental conditions. H3TRB Testing (High Temp/Humidity/Bias), 85C/85% RH/85% V (960V) Robustness onsemi Schottky Barrier SiC Diodes always maintain the best in class behavior in regards to leakage. Ruggedness SiC Diodes Ruggedness – Surge and Avalanche Surge current waveform of a 650V/30A onsemi SiC diode Avalanche current waveform of a 650V/30A onsemi SiC diode Wide Bandgap Applications Connect with us Language About onsemi Quality & Reliability Leadership Ecosystem Partners Fact Sheet Intellectual Property Locations Investor Relations Governance Events News Financials Stock Info Resources News & Media Press Announcements In The News Blog COVID-19 Business Updates Media Contacts Image Library Careers University Relations Search Jobs Support Technical Support Sales & Distribution Support Frequently Asked Questions Contact Us Community Forums Accessibility Terms of Sale Do Not Sell My Personal Information Terms of Use Privacy Cookie Policy Site Map © Copyright 1999-2021 Semiconductor Components Industries, LLC Cookies on onsemi We’ve put some small files called cookies on your device to make our site work. We’d also like to make use of optional analytics & marketing cookies. These send information about your device to onsemi & our advertising partners. We use this information to improve your experience on our site, personalize content and advertising, and analyze our site traffic. Read Our Cookie Policy May we use optional analytics & marketing cookies to better serve you? Reject Optional Cookies Accept Optional Cookies