English (EN) Services Contact Menu Transient Liquid Phase (TLP) Bonding EV Group Technologies Transient Liquid Phase (TLP) Bonding Transient Liquid Phase (TLP) Bonding Low-temperature metal wafer bonding by Transient Liquid Phase (TLP) Introduction Features Figures Introduction Transient Liquid Phase (TLP) bonding is often used when high-reliability bond lines or electric connections are needed. In this process, the interlayer melts, and the interlayer element diffuses into the substrate materials, thereby causing isothermal solidification. This results in a bond that has a higher melting point than the bonding temperature. The unique characteristic feature of Transient liquid phase (TLP) bonding is that the liquid bond interface solidifies by diffusion but not by cooling below a melting point compared to eutectic bonding. This enables low process temperatures while providing much higher remelt temperature after joining the wafers. In particular, the interlayer is a low melting point material that moves into the lattice and grain boundaries of the high melting point parent materials, thereby forming an inter-metallic layer. In TLP, it is important to select a suitable interlayer based on the flow characteristics, stability and wettability in order to form a composition that provides faster diffusion characteristics and high reliability. Compared to other bonding technologies, TLP is an advanced type of solder bonding method that can form hermetic sealing at lower temperatures. It is ideal for MEMS vacuum packaging, as the process can be performed at low temperatures compatible with CMOS standards and the resulting bonded devices can withstand harsh environments with high temperatures. Features Vacuum encapsulation Defined pressure encapsulation Conductive process Hermetic sealing Good mechanical strength Low temperature process Less applied force during bonding Very good post-bond alignment Applied in many metallic and ceramic systems Joints with uniform composition profile Figures Face-to-face wafer bonding process of memory integration devices using Cu-Sn alloy. SEM image of Au-In low-temperature TLP bonded samples. Events SEMICON Europa 2021 MESSE MÜNCHEN | Co-located with Productronica 16.11. - 19.11.2021 Munich, Germany SEMICON Japan 2021 Venue: Tokyo Big Sight/Online 15.12. - 17.12.2021 Tokyo, Japan Show all events Related downloads EVG Solutions for MEMS Brochure - 2.28 MB EVG GEMINI® Series Brochure - 2.12 MB EVG® 500 Series Brochure - 1.83 MB EVG Solutions for R&D Brochure - 1.66 MB Talk to our EVG technology experts! Questions? Contact form Related products GEMINI® Automated Production Wafer Bonding System EVG®501 Wafer Bonding System EVG®510 Wafer Bonding System EVG®520 IS Wafer Bonding System EVG®540 Automated Wafer Bonding System EVG®560 Automated Wafer Bonding System Questions about our technologies? Contact the EVG experts Send us a message Related News From wafers to power electronic applications: new consortium to create European supply chain for silicon carbide semiconductors Oct, 2021 EV Group Celebrates “40+1 Year” Anniversary with Exciting Live Event at Corporate Headquarters Sep, 2021 Applied Materials Introduces New Technologies and Capabilities for Accelerating the Semiconductor Industry's Heterogeneous Integration Roadmap Sep, 2021 EV Group Products Technologies Company Careers Social Media LinkedIn Facebook Twitter YouTube Join our newsletter We will send you updates on new products and technologies. Your Email Subscribe © 2021, EV Group (EVG) Imprint Privacy Policy Terms of use