Transphorm Highest Performance, Highest Reliability GaN LOGIN / REG Search GaN TECHNOLOGY PRODUCTS DESIGN RESOURCES VIDEOS INVESTORS ABOUT US EXPAND No Two Wide Bandgap Technologies Are the Same. The SuperGaN® Technology Difference When designing Gen IV, Transphorm’s engineering team drew on learnings from production ramps of previous products, coupled with a constant drive for performance, manufacturability, and cost reduction to design a new product with ultimate simplicity and substantial improvements. The new platform’s patented technology delivers benefits that augment Transphorm’s intrinsic GaN performance and simplicity both in assembly and applications, which is the catalyst for the SuperGaN® brand. Driven by its patented technology, SuperGaN Gen IV benefits include: Increased Performance: Gen IV provides a flatter and higher efficiency curve with an improved Figure of Merit (RON*QOSS) of approximately 10 percent. Easier Designability: Gen IV offers increased simplicity of design-in by removing the need for a switching node snubber at high operation currents. Enhanced Inrush Current Capability (di/dt):Gen IV removes the switching current limits for the built-in freewheeling diode function in half bridges. Reduced Device Cost: Gen IV’s design innovations and patented technology simplify device assembly, too. The resulting cost adjustments continue to bring Transphorm’s GaN closer to Silicon transistor pricing. Proven Robustness/Reliability: Gen IV’s 35 mΩ FET offers the same gate robustness of +/- 20 Vmax and noise immunity of 4 V that is currently delivered by Transphorm’s Gen III devices. Transphorm Quality and Reliability Industry Leading Gan Reliability Field Reliability Data 2.4 Failures per Billion Hours (FIT) Field Hours 5.1B Field Reliability Data 20.6 Defects Parts per Million (DPPM) Quality + Reliability Webinar High voltage GaN transistors increase power density while reducing system size and cost. However, GaN FET validation differs from that of Silicon FETs. Listen to Transphorm’s Q+R expert as he explains how GaN devices should be validated; the target baseline results for infant mortality, FIT rates, etc.; and how these metrics impact end systems. Download the Reliability Paper Cascode vs. e-mode Our Q+R is in large part enabled by our design choice. Today, cascode is the only configuration proven to enable GaN in real-world applications. Transphorm’s GaN is backed by extensive lifetime, quality and reliability data—unavailable with other configurations today, such as pGaN e-mode. Not all GaN is alike. Comparing Transphorm cascode to today’s e-mode. Attribute Cascode (Transphorm)* e-mode (market)* Quality, reliability, lifetime performance Extended JEDEC, AEC-Q101, lifetime testing Limited data Device breakdown voltage (TJ = 150°C) 650 V (qualified), 1200 V (measured) 500 V and 600 V (measured Maximum transient protection 800 V 750 V Gate drive safety margin (RON @ VGS) 10 V 1 V Gate drive noise immunity 4.0 V (typical) 1.7 V (typical) Negative gate drive required No Yes Slew rate control Yes Yes Reverse conduction operation (VSD) 2.2 V to 2.6 V 6 V to 9 V (defined by gate drive) Saturation current limit (TJ = 150°C) > 3x higher than e-mode Reduced channel and gate charge Paralleling Up to two TO-XXX devices More than two devices possible FOM (RON * QOSS) Industry standard Minimal increase with reduced Q+R Die size Industry standard Smaller with reduced Q+R Thermal performance (72 mΩ) 50°C at 1500 W 83°C at 2526 W 80°C at 1500 W *Unless specified, data is based on a 50 mΩ device. Markets High-voltage GaN technology benefits numerous markets that require reliable higher efficiency, higher performance power conversion. The highest adoption rates are projected for the following application areas: Infrastructure and IT Power Supplies Increases clean power output in standardized server and telecom form factors. Consumer and Computing Adapters, Gaming Power Supplies Improved efficiencies result in lower thermals, improved power density and lower system cost. Broad Industrial Battery Chargers, UPS Reduces size and weight of systems that run industrial factories, charge battery powered forklifts, electric vehicles and keep critical data accessible.. Automotive Electric Vehicles, Charging Generates longer distance per charge with a lower overall system cost. 5G Mobile Adapters, RF Material Enables hyper fast charging of 5G-enabled devices while also producing N-polar GaN Epi, starting material for high efficiency RF solutions up to 94 GHz. Customers in Production Transphorm’s customers currently produce end products for various market applications. A few examples can be found below. BACK TO TOP Spotlight Customers Qualifications Awards GaN TECHNOLOGY SuperGaN® Technology Difference Quality and Reliability Cascode vs. e-mode Markets Customers in Production PRODUCTS All Products Product Profiles Product & Design Inquiries DESIGN RESOURCES Reference Designs Evaluation Kits Application Notes Design Guides Simulation Models Technical Papers Product & Design Inquiries VIDEOS Corporate Overview Technology Videos Application Videos INVESTORS Press Releases Events & Webcasts Presentation Financial Information SEC Filings Governance Analyst Coverage Resources ABOUT US Company News Events Press Releases Financial Media Contact Careers SIGN UP FOR TRANSPHORM EMAILS Stay up to date on current Transphorm products and be the first to hear about new product releases. SUBMIT By submitting this form, you are consenting to receive marketing emails from Transphorm. You can revoke your consent to receive emails at any time by using the SafeUnsubscribe® link, found at the bottom of every email. Emails are serviced by Mailchimp. LinkedIn Twitter YouTube WeChat © Copyright 2021 Transphorm Inc. All Rights Reserved. | Privacy