Technology Publications Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers ipfa-ieee.org – August 2020 This paper, written by co-authors from Atomera’s partner, Asahi-Kasei Microsystems (AKM), along with Atomera staff and co-authors from San Jose State University and tei Solutions contains ... Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation AIP Advances (Vol.10, Issue 6) – June 2020 Paper describing the application of MST to Schottky Barrier engineering, co-authored with UC Berkeley and Axcelis. FinFET contact resistance reduces on-state current and transistor performance. ... Applications of Oxygen Inserted Silicon Devices in Power and RF: (invited) 2020 4th IEEE ETDM Conference – April 2020 This invited paper, written with a TCAD expert co-author from San Jose State University (formerly at Synopsys), illustrates the MST doping profile engineering capability with examples from 5V ... Suppressing Oxidation-Enhanced Diffusion of Boron via Buried Epitaxial Oxygen-Inserted Layers in Silicon – IEEE Conferences ieeexplore.ieee.org – September 2018 This is the expanded journal version of the 2018 EDTM paper from the Atomera team and a co-author from Synopsys (NASDAQ:SNPS) describing the important discovery that MST can almost completely ... Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers – IEEE Journals & Magazine ieeexplore.ieee.org – September 2018 This is the expanded journal version of the 2018 EDTM paper from the Atomera team and a co-author from Synopsys (NASDAQ:SNPS) describing the important discovery that MST can almost completely ... Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack – IEEE Conference Publication Ieeexplore.ieee.org August, 2018 This paper describes an experimental characterization with co-authors from the University of Notre Dame demonstrating significant mobility improvement (23%) and gate leakage reduction (2.7x) ... Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation Journal of Applied Physics 123, 125704 (2018) This paper, with co-authors from UC Berkeley and Axcelis provides an experimental demonstration of an application of MST® to improve shallow junction technology. The data and associated ... Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel IEEE J-EDS November, 2017 This paper was invited for a special issue of the IEEE Journal of Electron Device Society based on the high ranking of the EDTM paper of the same title. It is an expanded version of the EDTM ... The impact of oxygen insertion technology on SRAM yield performance IEEE EDTM Conference 2017 June, 2017 This paper with co-authors from UT Dallas and elsewhere describes the simulation of 28nm planar SRAM incorporating MST®. Significant improvements in SRAM yield and Vmin are demonstrated, which ... Punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel IEEE EDTM Conference 2017 – June, 2017 This paper with co-authors from Prof. Suman Datta’s group at Penn State University (now at University of Notre Dame) describes the experimental engineering and modeling of boron and phosphorus ... Comparison of SOI versus Bulk FinFET Technologies for 6T-SRAM Voltage Scaling at the 7-/8-nm Node IEEE Transactions on Electron Devices, Vol. 64, Issue 1 January, 2017 This paper, with co-authors from UC Berkeley compares the implementation of MST® technology on bulk and SOI FinFETs. It shows that a bulk MST® FinFET provides almost all the benefits of the more ... Electron mobility enhancement in (100) oxygen-inserted silicon channel Applied Physics Letters 107, 123502 (2015) September, 2015 Applied Physics Letter with co-authors from SK Hynix and UC Berkeley detailing the origins of the very large (88%) measured increase in conductance (gm) for Oxygen Inserted (MST®) nMOS devices. Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology IEEE Transactions Electron Devices, vol. 61, no. 9, pp 3345-3349, September 2014 September, 2014 Paper with co-authors from UC Berkeley describing the wide range of power and performance benefits of MST® to extend the industry scaling of low power bulk nMOS devices. Oxygen-Inserted SegFET: A Candidate for 10 nm Node System-on-Chip Applications 2014 IEEE Silicon Nanoelectronics Workshop June 8, 2014 Paper with authors from UC Berkeley describing how MST® can enhance a new quasi-planar device, the SegFET, with performance that competes with the best 10nm generation devices for ... Effectivness of Quasi-Confinement Technology for Improving P-Channel Si and Ge MOSFET Performance 2013 IEEE Silicon Nanoelectronics Workshop June 9, 2013 Details the benefits of MST® for silicon and germanium p-type planar & FinFET devices over a wide range of technologies. Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6T SRAM Yield IEEE Transactions Electron Devices, vol. 60, no. 5, pp 1790-1793, May 2013 May 5, 2013 Joint paper with UC Berkeley simulating the improved yield and reduced minimum operating voltage of MST®-enabled 6-T SRAM cells with potentially up to 50% power savings. MOSFET Performance and Scalability Enhancement by Insertion of Oxygen Layers IEEE IEDM 2012 December 12, 2012 IEDM paper with UC Berkeley, introducing and calibrating the model for the MST® confinement effect using Synopsys Sentaurus platform simulation tools. Mobility (conductivity) enhancement for ... Tunneling through superlattices: the effect of anisotropy and kinematic coupling Journal of Physics: Condensed Matter, Volume 24, Number 49 November 12, 2012 Paper analyzing the origins of tunneling of carriers in various superlattice systems and providing a theoretical background for the observed reduction in gate leakage in MST® devices. Gate ... Simultaneous Carrier Transport Enhancement and Variability Reduction in Si MOSFETs by Insertion of Partial Monolayers of Oxygen 2012 IEEE Silicon Nanoelectronics Workshop June 10-11, 2012 We demonstrate simultaneous nMOS and pMOS high-field mobility enhancement and variability reduction by inserting partial monolayers of oxygen during silicon epitaxy of the channel layer. Silicon Superlattice on SOI for High Mobility and Reduced Leakage IEEE International SOI Conference 2007 October 1-4, 2007 This joint experimental paper with authors from Texas Instruments and Sematech (ATDF) demonstrates the first MST® mobility enhancement and gate leakage reduction results for a MST-enhanced ... Home Technology Applications Company Investors Contact © 2021 Atomera Incorporated. Privacy | Legal We use cookies on our website to give you the most relevant experience by remembering your preferences and repeat visits. By clicking “Accept”, you consent to the use of ALL the cookies. SETTINGS ACCEPT