We build the bridge between the digital and analog worlds. Our Technology Portfolio As a pure-play foundry specialized in analog/mixed-signal applications, we offer a wide range of modular CMOS and SOI processes in geometries ranging from 1.0 µm to 130 nm as well as special MEMS and SiC process capabilities. CMOS & SOI 13 process families with over 450 options MEMS MEMS with or without integrated CMOS SiC & GaN First 6-inch foundry offering worldwide Heterogeneous Integration 3D Integration and Wafer Level Package Solutions CMOS & SOI overview Overview of X-FAB's CMOS and SOI process options ranging from 130 nm to 1.0 µm. Digital Analog Mixed Signal High Voltage NVM RF Opto SOI High Temp 1.0 µm 0.8 µm 0.6 µm 350 nm 250 nm 180nm 130 nm X-FAB's CMOS process offering Unlike most conventional semiconductor foundries, X-FAB does not simply stick to the ITRS Roadmap, trying to develop ever-smaller and faster CMOS process technologies. The ITRS Roadmap is our guideline - our central aim, however, is to enhance and expand the CMOS technologies it recommends with additional, special analog functions and modular options. X-FAB thus creates a broad range of new mixed-signal process families for applications in various areas, from the automotive and medical sector to industrial applications, communication products, or consumer electronics. Our state-of-the-art CMOS and SOI platforms can be complemented with specialties ranging from analog/mixed-signal functions to high-voltage options, embedded non-volatile memories, optical, RF and bipolar elements, or the implementation of microelectromechanical sensor technologies. 180 nm CMOS process family XH018 XP018 XS018 XT018 XC018 Automotive 180 nm sensor and high-voltage technology platform XH018 is a powerful modular 180 nm sensor and high-voltage EPI technology. It combines the benefit of a 180 nm modular 1.8 V / 3.3 V ultra low noise process supporting an extended temperature range of -40 to 175°C with an extensive portfolio of high-voltage and analog devices as well as a range of automotive grade non-volatile memory options. In addition, multiple fully characterized photodiode and APD/SPAD options are available. The XH018 platform is designed for smart sensor, sensor interface and actuator applications. Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs. Key features: Fully modular 180 nm EPI process based on 1.8 V / 3.3 V dual gate core module Up to six metal layers with different thick metal options Up to 175ºC operating temperature supporting AEC-Q100 grade 0 Unique integration of digital, analog, HV and NVM in a single process High-reliability automotive NVM solutions including embedded Flash, NVRAM and OTP Optional ultra-low-noise 1.8 V and 3.3 V CMOS Fully characterized photodiodes and APD/SPAD 10 V to 45 V high-voltage CMOS transistors with 18 V gate oxide High gain BJTs HV Schottky diodes Standard and high capacitance single, double, triple MIM and metal fringe capacitors Multiple 1.8 V and 3.3 V libraries available to enable complex designs Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner MORE ON FEATUREXPLORER 350 nm CMOS process family With our 350 nm process family you can design chips for a wide range of applications. All four processes come with best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling as well as comprehensive analog, digital, and memory IPs. XH035 XA035 XO035 XU035 Comprehensive 350 nm sensor and high-voltage technology platform XH035 is a comprehensive modular 350 nm sensor and high-voltage EPI technology. It combines the benefit of a 350 nm modular 3.3 V ultra low noise process with an extensive portfolio of high voltage and analog devices. The XH035 platform is designed for robust sensor and sensor interface applications. Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs. Key features: Fully modular 350 nm EPI process based on 3.3 V ultra low noise core module Alternative 5 V core module or 3.3 V / 5 V dual gate Best-in-class ultra low noise 3.3 V PMOS Up to four metal layers with thick metal options Up to 125 ºC operating temperature supporting AEC-Q100 grade 1 Unique integration of digital, analog, HV and NVM in a single process High-reliability automotive NVM solutions including EEPROM Optical window etching and Anti Reflecting Coating for high sensitive photodiodes 10 V – 100 V HV CMOS transistors with 3.3 V, 5 V or 18 V Gate Oxide High gain BJTs HV Schottky diodes Standard single, double MIM, Poly and metal fringe capacitors Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner MORE ON FEATUREXPLORER 0.6 µm to 1 µm CMOS process families X-FAB offers a range of mature CMOS process in the 0.6 µm to 1 µm process nodes that come with specialities like high-temperature capability, enhanced voltage range and many modular process options to fit your device needs. All of these processes come with best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling as well as comprehensive analog, digital, and memory IPs. XC06 XT06 XB06 XHB06 CX08 XC10 0.6 µm modular mixed-signal technology with embedded non-volatile memory and high-voltage options The XC06 process complements X-FAB's 0.6 µm modular mixed-signal offering with embedded non-volatile memory and high-voltage options. EEPROM blocks up to 32 kbit and Flash memories up to 512 kbit can be integrated in standard cell, semi-custom and full custom designs for industrial, automotive and telecommunication products. MOS and bipolar transistors are available with breakdown voltages of up to 100 V. The 5 V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 μm CMOS processes.For analog applications, several capacitor and resistor devices can be realized using the double poly non-volatile memory architecture. Key features: Standard 5V 0.6 µm CMOS core module ESD implant module Medium-voltage NMOS and PMOS Medium/high-voltage depletion NMOS High-voltage graded PMOS Extended high-voltage DMOS Exended high-voltage PMOS Triple well isolated CMOS Triple well bulk isolated CMOS Double poly capacitor/(high resistor/low T.C.) Linear capacitor Schottky diode ROM, EEPROM and FLASH options Optical window module PIN diode option 3 metal layers and thick metal option MORE ON FEATUREXPLORER SOI processes XR013 XT018 XT06 XI10 XDH10 XDM10 130 nm RF SOI platform XR013 is our 130 nm modular, feature-rich RF SOI technology solution suitable for multiple air interface standards and both fixed and mobile applications, such as smartphones, infrastructure and WLAN connectivity devices. The high isolation and low insertion losses make XR013 a good fit for RF switching applications in front-end modules for 2G, 3G, 4G LTE Advanced and 5G New Radio designs. Low-noise amplifiers demonstrating low noise figure, high gain and high linearity thanks to NFET options complete our XR013 RF SOI offer. Key features: Low RonCoff figure of merit for RF switches with surface-potential-based (PSP) compact models, including advanced modelization of a high-impedance SOI substrate Low-noise, high-gain, high-linearity NFET options for RF switch and low-noise amplifier integration 2.5 V CMOS platform with hybrid Cu/Al metallization with optional thick Cu levels Both low- and high-value diffusion and poly resistors including a 3 kΩ/sq p-poly resistor High-density vertical RF metal–insulator–metal (MIM) capacitor and vertical parallel plate capacitors (VPP) Large catalog of high-Q, symmetric, octagonal inductors for multiple metallization configurations 1.2 V- and 2.5 V-based RF varactors Optional low-leakage 1.2 V CMOS module Si-proven RF reference kits Si-proven analog and digital IP Si-proven eFuse and supporting IP Si-proven general-purpose input/output (GPIO) libraries including electrostatic discharge (ESD) solutions Cadence-based front-end design flow with back-end support for both Cadence and Mentor MORE ON FEATUREXPLORER MEMS X-FAB MEMS Foundry offers unsurpassed experience, expertise and execution with its high-volume MEMS manufacturing service. As the first ever pure-play MEMS foundry, X-FAB draws on more than 20 years MEMS manufacturing experience and continues to meet the new demands for this rapidly expanding and exciting group of technologies in terms of time to market, quality assurance, high yield and supply-chain management tools. Operating from six fabs for MEMS and CMOS processes and an ecosystem of manufacturing and design partners, X-FAB is the proven choice for process development and installation, process capability, design support and long-term manufacturing stability. As well as customer specific process installation, X-FAB offers a range of in-production standard process blocks, open-platform processes and IP blocks for key MEMS applications that enable fast time to market. X-FAB MEMS Foundry offers an established, fast and professional service for contract manufacturing of MEMS and micro-machined structures that can grow with your high-volume business. Specific solutions are available for: CMOS & MEMS Sensors Wafer Level Packaging and 3D integration Silicon-based microfluidics X-FAB's MEMS manufacturing is now focused on two locations, Erfurt and Itzehoe, both in Germany. However, X-FAB leverages the operations of all six of its manufacturing sites for the manufacturing of MEMS, which complements X-FAB’s other foundry solutions addressing optical, CMOS analog/mixed-signal and high voltage applications. A core competency of X-FAB is the monolithic integration of MEMS devices with CMOS technology to meet size and performance requirements. X-FAB also offers access to one of the broadest range of manufacturing materials in the semiconductor industry. CMOS & MEMS SENSORS WLP & 3D INTEGRATION SILICON-BASED MICROFLUIDICS SiC & GaN X-FAB is the first pure-play foundry to provide comprehensive processing technologies for wide bandgap (WBG) materials Silicon Carbide (SiC) and Gallium Nitride (GaN). We are offering foundry services for those new materials on the scale of silicon, using the existing silicon manufacturing lines. We are processing GaN-on-Si wafers in our modern 8” fab in Dresden, Germany and SiC wafers in our 6” fab in Lubbock, Texas, USA. By running the non-silicon wafers on the same lines as Si-wafers, our customers have access to high-quality and cost-effective foundry solutions. It allows customers to import their projects into a stable and trusted, fully automotive-qualified fab environment which supports output levels that are comparable with silicon yields. X-FAB has a long history in processing SiC and GaN, ranging back to early 2013, with just a few customers starting to engage with those “exotic” materials. In this time, we gained significant knowledge and expertise and developed a business model that allows even less experienced customers to create their own SiC power devices or GaN HEMT devices. With our sites in Dresden and Lubbock focused on serving the growing markets, the company is fully prepared for the expected acceleration of SiC and GaN device shipments – enabling key applications, such as charging applications, electric vehicles and advanced power management systems. READ MORE Heterogeneous Integration Heterogeneous 3D integration of semiconductor components is a main driver within the microelectronics industry towards higher integration complexity, enhanced system performance and economies of scale. Our technology offering of 3D integration and wafer-level packaging methods enables solutions for system integration of analog/mixed-signal integrated circuits , sensors and MEMS. These components are essential for the next-generation microelectronics products of our customers in the key markets automotive, industrial, medical and mobile communication. 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