Applications High-K Metal Gate (HKMG) MST Squeezes Higher Speed and Lower Power from Leading Edge CMOS Fig.1 electron mobility vs. effective field[1] Fig.2 Gate leakage vs. EOT[1] The 28nm technology node was the last generation of planar CMOS. At 28nm, the conventional poly-Si/SiON gate stack was replaced by HKMG (High-K Metal Gate) to suppress gate leakage. HKMG degrades carrier mobility, so strain engineering technology was used to boost carrier mobility with a greater effect seen on PMOS than NMOS Fig.3 Rsh vs. Xj (NFET) [2] Fig.4 Rsh vs. Xj (PFET) [2] Atomera’s MST film can improve HKMG NMOS carrier mobility by 23%, as shown in Figure 1 Gate leakage is reduced by 2.7x, shown in Figure 2, enabling HKMG EOT(Equivalent Oxide Thickness) scaling down to the physical limit Added benefits of the MST film include lower sheet resistance at shallower junction depth, shown for NMOS in Figure 3, PMOS in Figure 4 Publications Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack 2018 76th Device Research Conference (DRC) J.A. Smith ; H. Takeuchi ; R. Stephenson ; Y.A. Chen ; M. Hytha ; R. J. Mears ; S. Datta Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon Journal of Vacuum Science & Technology B 36, 061211 (2018) Xi.Zhang, D. Connelly, H. Takeuchi, M. Hytha, R. J. Mears, L. M. Rubin, and T.-J. King Liu More Publications Home Technology Applications Company Investors Contact © 2021 Atomera Incorporated. Privacy | Legal We use cookies on our website to give you the most relevant experience by remembering your preferences and repeat visits. By clicking “Accept”, you consent to the use of ALL the cookies. SETTINGS ACCEPT