Yaduwar bayanan juriya

Yaduwar ƙwarewar juriya (SRP), wanda aka fi sani da yaduwar ƙididdigar juriya (sRA), wata dabara ce da aka yi amfani da ita don nazarin resistivity da zurfin a cikin semiconductors. Na'urorin semiconductor sun dogara da rarraba masu ɗaukar (electrons ko ramuka) a cikin tsarin su don samar da aikin da ake so. Za'a iya ƙaddamar da maida hankali ga mai ɗaukar hoto (wanda zai iya bambanta da umarni goma na girman) daga bayanin martaba na resistivity wanda SRP ya bayar.

## Tarihi
Babban dangantakar yawanci ana danganta shi ga James Clerk Maxwell (1831-1879). A cikin 1962, Robert Mazur (US Patent 3,628,137) da Dickey  sun haɓaka tsarin bincike na 2 ta amfani da allurar osmium mai nauyi.

A cikin 1970, an kafa Solid State Measurements don ƙera kayan aikin rarraba juriya kuma a cikin 1974, an kafa Solecon Labs don samar da sabis na rarraba juriyar. A cikin 1980, Dickey ya haɓaka hanya mai amfani don ƙayyade p- ko n-type ta amfani da kayan aikin juriya na yaduwa. Ci gaba da ingantawa amma an kalubalanci su ta hanyar raguwar girman na'urorin dijital na zamani. Ga ƙananan tsari (n-type="mw:Extension/ref">[./Spreading_resistance_profiling#cite_note-12 [1] yana ba da damar ƙayyade resistivity na gida. Binciken yana samar da bincike mara mahimmanci ga juriyar silicon (kusan hulɗa ta ohmic) a kan dukkan kewayon resistivity don nau'in p da nau'in n (mai arziki a cikin ramuka da wadata a cikin electrons bi da bi). Tsayawa da juriya na waya da yaduwar juriya a cikin shawarwarin bincike zuwa mafi ƙaranci, auna juriya kusan kawai daga 

R 

= 

ρ 

2 a 

{\displaystyle R{=}{\frac {\rho }{2a}}} 

don samfurori na silicon aƙalla 

2 a 

{\displaystyle 2a} 

mai kauri. Tare da taimakon ka'idojin daidaitawa, 

ρ 

{\displaystyle \rho } 

ana iya tantance shi a kowane bincike ta hanyar binciken biyu.

## Kayan aiki
Ana amfani da son zuciya na 5mV a duk hanyoyin binciken. Matsayin da aka auna na iya kasancewa daga 1-ohm zuwa ohms biliyan daya. Ana amfani da amplifier "log R" ko electrometer don auna juriya.

## Injiniya

SRP na zamani yana da shawarwari biyu na binciken tungsten carbide da aka sanya kusan 20 um. Kowane kusurwa an ɗora shi a kan wani nau'i na kinematic don rage "scrubbing" (inda binciken ke tsagewa tare da farfajiya). Ana saukar da gwaje-gwaje a hankali a kan wani yanki na silicon ko germanium. Kodayake loading na shawarwarin binciken na iya zama kadan kamar 2 g., matsin yana wuce fam miliyan ɗaya a kowace inci murabba'i (ko ~ 10G pascals) wanda ke haifar da canjin lokaci a cikin silicon zuwa "beta-tin" wanda ke samar da kusan hulɗa ta ohmic. Tsakanin kowane ma'auni, ana ɗaga gwaje-gwaje kuma an tsara su a nesa da aka ƙaddara a cikin bevel. Ana samar da Bevels ta hanyar saka samfurin a kan kusurwa kuma a niƙa bevel tare da yawanci 0.1- ko 0.05-micrometre lu'u-lu'u. Angles na Bevel, wanda aka zaba don dacewa da zurfin sha'awa, na iya kasancewa daga ~ 0.001 zuwa 0.2 radians. Dole ne a yi amfani da hankali don samar da madaidaiciya, mai laushi tare da mafi ƙarancin zagaye na gefen bevel.  (Dubi Hoto na 1.) &nbsp;

## Ƙayyadaddun ganowa
Tsarin kayan aiki yawanci daga ohm daya zuwa ohms biliyan daya. Wannan ya isa ga dukan kewayon resistivity a cikin silicon guda ɗaya.

## Daidaitawa
NIST ce ta samar da ka'idojin daidaitawa. An samar da saiti na ka'idoji 16 daga kimanin 0.0006 ohm-cm zuwa 200 ohm- cm don duka n- da p-type da kuma duka (100) da (111) tsarin lu'ulu'u. Don babban resistivity (sama da 200 ohm-cm kuma watakila sama da 40,000 ohm- cm) darajar resistividad dole ne a kara shi daga Tsarin daidaitawa.

## Aikace-aikacen
Ana amfani da kayan aikin da farko don ƙayyade tsarin doping a cikin silicon semiconductors. Ana nuna bayanan martaba masu zurfi da marasa zurfi a Hoto 2.

## Sauran matakai
**Secondary Ion Mass Spectrometry (SIMS)** hanya ce mai matuƙar amfani wajen duba yadda **dopant** (sinadaran da ake ƙara don canza halayen lantarki na semiconductor) suka yadu a cikin kayan lantarki.

**SIMS** na iya nuna adadin kwayoyin sinadari (atomic concentration) cikin fadin matakai uku zuwa hudu na bambancin yawa (**dynamic range**).

**Spreading Resistance Profiling (SRP)** kuma na iya auna **carrier concentration** (wato adadin dopants ɗin da ke da aiki a lantarki) har zuwa matakai takwas ko tara na bambancin yawa.

Yawanci, waɗannan hanyoyin suna cike juna – wato suna taimaka wa juna – ko da yake a wasu lokuta suna yin gasa da juna.

**Na'urar SIMS** tana da tsada sosai wajen ƙera da aiki da ita.

**SRP** kuwa, yana aiki ne kawai da **silicon**, **germanium**, da wasu ƙalilan daga cikin semiconductors.

Amma **SIMS** na iya auna yaduwar sinadarai a kusan kowane abu, ko a cikin kowane abu.

**SIMS** na da ƙwarewar auna wurare ƙanana sosai – mai amfani musamman wajen duba yankunan da ke da zurfi ƙanƙani (ƙasa da 0.1 micrometer).

Amma **SRP** yafi sauƙi da dacewa idan ana son auna wurare masu zurfi sosai.
----Idan kana so, zan iya fassara ma'anar kalmomi na kimiyya ɗaya bayan ɗaya ko kuma in yi taƙaitaccen bayani.

## Manazarta

## Bayanan littattafai
**G. Mazur da D. H. Dickey,** *Wani Hanyar Spreading Resistance don Auna Juriya a kan Silicon*, J. Electrochem.

### Bayani:

* **Spreading Resistance Technique**: wata hanya ce da ake amfani da ita wajen auna **juriya (resistivity)** a cikin **silicon**, wanda kayan lantarki ne da ake amfani da shi sosai a cikin semiconductors.
* **J. Electrochem.** yana nufin **Journal of Electrochemical Society** – wata mujalla da ke wallafa bincike kan sinadarai na lantarki.

Idan kana so a ci gaba da fassara dukkanin sakon ko bayanin da ke cikin wannan takarda ko citation, sai ka bani cikakken rubutun.

D. H. Dickey, *Tarihi da Matsayi na Matsalar Rage Bayanai a cikin SRA*, Ayyuka na Taron Kasa da Kasa na Uku kan Kasuwanci da Fasahar Hanyar Hanyar Hadin Gizo, Ellwanger et al., Eds. , Gidan Buga na Masana'antar Lantarki

M.W. Denhoff, An Equal Calculation of Spreading Resistance, Journal of Physics D: Applied Physics, Volume 39, Number 9

## Haɗin waje

*  Yaduwa_Resistance_Profiling
* Semilab
* Gidan gwaje-gwaje na Solecon
* Koyarwa game da tsarin SRA
* Ƙarin bayanan fasaha
* Cikakken Ƙididdigar Yaduwar Tsayayya