Title: Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Subjects: Engineering, Modulation-doped field-effect transistors, Indium arsenide, Semiconductors, Terahertz technology, Transistors HEMT, Arséniure d'indium, Semi-conducteurs, Technologie térahertz, Semiconductor, SCIENCE, Physics, TECHNOLOGY, Electricity, Electronics, Circuits, General