Title: Physical MOSFET model applicable to extremely scaled CMOS IC design
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF002325290&ix=pm&I=0&V=D&pm=1" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF002325290&ix=pm&I=0&V=D&pm=1</a>
Subjects: Metal oxide semiconductor field-effect transistors--Mathematical models, Metal oxide semiconductors, Complementary--design and construction, Integrated circuits--Design and construction.