Title: Compound semiconductors strained layers and devices
First published: 2000
Description: "In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wide-band gap II-VI and III-Nitride semiconductors.

GeSi strained layers are discussed for comparison and for clarifying the underlying physics." "The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material."--BOOK JACKET.
Subjects: Layer structure (Solids), Compound semiconductors, Semiconductors
LC classification: TK7871.99.C65 J35 2000, TK7871.99.C65 J35 2000