Title: Fundamentals of III-V devices
First published: 1999
Description: "With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level.

Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices - heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs).

An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features."--BOOK JACKET.
Subjects: Bipolar transistors, Field-effect transistors, Modulation-doped field-effect transistors, Metal semiconductor field-effect transistors, Electronic apparatus and appliances
LC classification: TK7871.96.B55 L567 1999