Title: MATERIALS RESEARCH FOUNDATIONS
Description: The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.
Subjects: Silicon carbide, Effect of radiation on, SCIENCE, Chemistry, Inorganic