Title: Growth processes and surface phase equilibria in molecular beam epitaxy
Description: The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Subjects: Crystal growth, Molecular beam epitaxy, Semiconductor doping, Molecular beams, Epitaxy, Chemistry, Surfaces (Physics)