Title: Analysis, modeling, and control of floating-body effects in nanometer-gate-length partially depleted silicon-on-insulator CMOS devices and circuits
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF002676594&ix=pm&I=0&V=D&pm=1" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF002676594&ix=pm&I=0&V=D&pm=1</a>
Subjects: Metal oxide semiconductor field-effect transistors--Design and construction, Metal oxide semiconductors, Complementary--Design and construction, Silicon-on-insulator technology.