Title: Ion implantation of double-barrier resonant-tunnelling diodes
Description: Investigation of the electronic transport and physical structure of ion-implanted double-barrier diodes, with a view to using them in 3D electronic circuitry (with, say, an ASPAT diode).
Subjects: ion implantation, resonant tunnelling, double barrier, gallium arsenide, GaAs, proton isolation
Time periods: 1996