A BASIC program for calculating dopant density profiles from capacitance-voltage data
By: Richard L. Mattis and Martin G. Buehler.
Contributors: Buehler, Martin G., joint author.; United States. National Bureau of Standards.
Series: Semiconductor measurement technology; National Bureau of Standards special publication ; 400-11; NBS special publication ;; 400-11.
Publisher: U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
Published: 1975
Place of publication: Washington
Language: eng
Number of pages: 33
Subjects: Ion implantation -- Data processing.; Diodes, Semiconductor -- Data processing.; Electric measurements -- Data processing.; BASIC (Computer program language)
Notes: Includes bibliographical references.