In-situ testing of radiation effects on VLSI capacitors using the NPS linear accelerator
By: Duane Salsbury
Publisher: Naval Postgraduate School; Available from National Technical Information Service
Published: 1996
Place of publication: Monterey, Calif; Springfield, Va
Language: eng
Format: Electronic resource
Number of pages: 97
Description: The study of radiation effects on VLSI components is a very heavily researched topic. There      are several reasons for this research, one of which is the application of VLSI components to      space related vehicles. One component essential to Analog VLSI elements is the capacitor.      The purpose of this paper is to better define the actual effects of radiation on the MOS VLSI      capacitor. The radiation testing is conducted using the NPS electron linear accelerator. The      data is taken while the capacitor is being exposed to an accumulating dose of electron      radiation. The capacitance values are monitored using the parameter changes of a specially      designed low pass filter circuit. The 3 dB breakpoint frequency of this filter is used to calculate      the actual capacitance. The capacitance value is then related to the accumulated radiation dose      in Rads. The results are very important and needed, especially if off-the-shelf components are      to be utilized in the design of spacecraft systems.
Notes: Thesis advisor(s): Sherif Michael.

"December 1996."

Thesis (M.S. in Electrical Engineering) Naval Postgraduate School, December 1996.

Includes bibliographical references (p. 95-96).

"Approved for public release, distribution unlimited"--Cover.

Also Available online.

Mode of access: World Wide Web.

System Requirements: Adobe Acrobat reader.

US Navy (USN) author.

dk/dk cc:9116 6/12/97.