III-V nitride semiconductors
Subtitle: applications & devices
By: edited by E.T. Yu and M.O. Manasreh.
Contributors: Yu, E. T.; Manasreh, Mahmoud Omar.
Series: Optoelectronic properties of semiconductors and superlattices -- v. 16
Publisher: Taylor & Francis; CRC Press
Published: 2003
Place of publication: New York
Language: eng
Number of pages: 700
Subjects: Semiconductors -- Materials.; Nitrides.
Other titles: 3-5 nitride semiconductors; Three-five nitride semiconductors
Description: "Recent and dramatic advances in III-V nitride semiconductor materials and device technology has led to an explosion of research interest and activity directed towards a plethora of applications of nitride materials in electronics and optoelectronics. III-V Nitride Semiconductors: Applications and Devices includes contributions of leading researchers in nitride materials and device technology.

The contributions emphasize the Ohmic and Schottky contacts, integration of GaN with dissimilar substrate materials, piezoelectric effects, high electron mobility transistors, electron transport, GaN metal-semiconductor field-effect transistor, AlGaInN multiple quantum well laser diodes, blue vertical cavity emitting lasers, and ultraviolet photodetectors.".

"The unique volume provides a comprehensive review and introduction of application and devices based on GaN and related compounds for newcomers to the field and a stimulus to further advances for experienced researchers."--BOOK JACKET.
Notes: Includes bibliographical references and index.