Operation and modeling of the MOS transistor
By: Yannis Tsividis.
Series: McGraw-Hill series inelectrical engineering. Electronics and electronic circuits; McGraw-Hill series in electrical engineering. VLSI
Publisher: McGraw-Hill
Published: 1987
Place of publication: New York; London
Language: eng
Number of pages: 505
Subjects: Metal oxide semiconductors -- Mathematical models.; Field-effect transistors -- Mathematical models.
Notes: Includes index.

Text on lining papers.