Metal Impurities in Silicon-Device Fabrication
By: by Klaus Graff
Series: Springer Series in Materials Science -- 24; Springer series in materials science -- 24.
Publisher: Springer Berlin Heidelberg
Published: 1995
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 216
ISBN-13: 9783642975950; 9783642975936
Subjects: Inorganic Chemistry; Electronics; Surfaces (Physics)
Description: Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.
Notes: Online full text is restricted to subscribers.

Also available in print.

Mode of access: World Wide Web.