Point defect structures in gallium arsenide studied by positron spectroscopies
By: Kimmo Saarinen
Contributors: Teknillinen korkeakoulu
Series: Acta polytechnica Scandinavica -- no. 175
Publisher: Finnish Academy of Technology
Published: 1991
Place of publication: Helsinki
Language: eng
Number of pages: 36
Subjects: Gallium arsenide semiconductors; Point defects; Semiconductors; Impurity distribution; Positron annihilation
Notes: Thesis (doctoral)--Helsinki University of Technology, 1991.

Includes bibliographical references (p. 34-36)