The physics and chemistry of SiO₂ and the Si-SiO₂ interface--4, 2000
Subtitle: proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface, Toronto, Canada, May 15-18, 2000
By: editors, Hisham Z. Massoud ... [et al.].
Contributors: Massoud, Hisham Z.; Electrochemical Society. Electronics Division.; Electrochemical Society. Dielectric Science and Technology Division.
Series: Proceedings ;; v. 2000-2; Proceedings (Electrochemical Society) ;; v. 2000-2.
Publisher: Electrochemical Society
Published: 2000
Place of publication: Pennington, NJ
Language: eng
Number of pages: 539
Subjects: Silica -- Surfaces -- Congresses.; Dielectrics -- Surfaces -- Congresses.; Silicon dioxide films -- Congresses.; Surface chemistry -- Congresses.; Surfaces (Technology) -- Congresses.
Genres: Congresses.
Notes: Includes bibliographical references and indexes.
"Electronics Division and Dielectrics Science and Technology Division."