From Hopping to Ballistic Transport in Graphene-Based Electronic Devices
Contributors: Jarillo-Herrero, Pablo; Yacoby, Amir; Sachdev, Subir
Published: 2013
Language: eng
Description: This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature.
Notes: Keywords: bilayer, electron focusing, graphene, quantum Hall effect, trilayer.

Thesis Ph.D. Harvard University 2013