Semiconductor heterostructure devices
By: [by Masayuki Abe, Naoki Yokoyama].
Contributors: Yokoyama, Naoki.
Series: Japanese technology reviews,; vol. 8.; Electronics; Japanese technology reviews ;; vol. 8.; Japanese technology reviews.
Publisher: Gordon and Breach Science Publishers
Published: 1989
Place of publication: New York
Language: eng
Number of pages: 96
Subjects: Field-effect transistors.; Bipolar transistors.
Notes: Includes bibliographies and index.
Table of contents: title: pt. 1. High electron mobility transistors / by Masayuki Abe; title: pt. 2. Resonant tunneling devices / by Naoki Yokoyama.