Development of silicon carbide semiconductor devices for high temperature applications
By: Lawrence G. Matus and J. Anthony Powell and Jeremy B. Petit.
Contributors: Powell, J. Anthony.; Petit, Jeremy B.; United States. National Aeronautics and Space Administration.
Series: NASA technical memorandum -- 104398.
Publisher: National Aeronautics and Space Administration; For sale by the National Technical Information Service
Published: 1991
Place of publication: [Washington, DC]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Silicon carbide.
Notes: Distributed to depository libraries in microfiche.

Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration], 1991. 1 microfiche.