Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes
By: A. H. Sher ; sponsored by U.S. Atomic Energy Commission.
Contributors: U.S. Atomic Energy Commission.
Series: Semiconductor measurement technology; National Bureau of Standards special publication ; 400-13; NBS special publication ;; 400-13.
Publisher: U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
Published: 1975
Place of publication: Washington
Language: eng
Number of pages: 20
Subjects: Germanium diodes -- Defects.; Silicon diodes -- Defects.; Infrared technology.
Notes: Includes bibliographical references.