Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology
By: editors, G.R. Srinivasan, C.S. Murthy, S.T. Dunham.
Contributors: Srinivasan, G. R.; Murthy, C. S.; Dunham, S. T.
Series: Proceedings / Electrochemical Society ;; v. 96-4; Proceedings (Electrochemical Society) ;; v. 96-4.
Publisher: Electrochemical Society
Published: 1996
Place of publication: Pennington, NJ
Language: eng
Number of pages: 528
Subjects: Semiconductors -- Mathematical models -- Congresses.; Crystals -- Defects -- Mathematical models -- Congresses.; Ion implantation -- Mathematical models -- Congresses.
Genres: Congresses.
Notes: Includes bibliographical references and indexes.