Gallium arsenide
Subtitle: proceedings of the Second Conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986
By: editor, E. Lendvay ; sponsors, Hungarian Academy of Sciences, Research Institute for Technical Physics of the Hungarian Academy of Sciences.
Contributors: Lendvay, E.; Magyar Tudományos Akadémia.
Publisher: Trans Tech Publications; Distributed in North America by Trans Tech Publications
Published: 1987
Place of publication: [Aedermannsdorf], Switzerland; Brookfield, Vt
Language: eng
Number of pages: 366
Subjects: Gallium arsenide semiconductors -- Congresses.
Other titles: Crystal properties and preparation. Special issue.
Notes: "Published as a special issue of Crystal properties and preparation."--T.p. verso.

Includes bibliographical references and index.