ULSI devices
By: edited by C.Y. Chang, S.M. Sze
Contributors: Chang, C. Y., 1937-; Sze, S. M., 1936-
Publisher: Wiley
Published: 2000
Place of publication: New York
Language: eng
Number of pages: 729
Subjects: Integrated circuits -- Ultra large scale integration; Semiconductors
Description: "Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area.

Edited by two of the foremost authorities on semiconductor device physics with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices a MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications."--BOOK JACKET.
Notes: "A Wiley-Interscience publication."

Includes bibliographical references and index