Process and Device Simulation for MOS-VLSI Circuits
By: edited by Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham
Contributors: Antoniadis, Dimitri A.; Dutton, Robert W.; Oldham, William G.
Series: NATO ASI Series, Series E: Applied Sciences, 0168-132X -- 62; NATO ASI series -- 62.
Publisher: Springer Netherlands
Published: 1983
Place of publication: Dordrecht
Language: eng
Format: [electronic resource] /
Number of pages: 636
ISBN-13: 9789400968424
Other titles: Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982